WorldWideScience

Sample records for thick film ferromagnetic

  1. Ferromagnetic thin films

    Science.gov (United States)

    Krishnan, Kannan M.

    1994-01-01

    A ferromagnetic .delta.-Mn.sub.1-x Ga.sub.x thin film having perpendicular anisotropy is described which comprises: (a) a GaAs substrate, (b) a layer of undoped GaAs overlying said substrate and bonded thereto having a thickness ranging from about 50 to about 100 nanometers, (c) a layer of .delta.-Mn.sub.1-x Ga.sub.x overlying said layer of undoped GaAs and bonded thereto having a thickness ranging from about 20 to about 30 nanometers, and (d) a layer of GaAs overlying said layer of .delta.-Mn.sub.1-x Ga.sub.x and bonded thereto having a thickness ranging from about 2 to about 5 nanometers, wherein x is 0.4 .+-.0.05.

  2. Magnetic damping phenomena in ferromagnetic thin-films and multilayers

    Science.gov (United States)

    Azzawi, S.; Hindmarch, A. T.; Atkinson, D.

    2017-11-01

    Damped ferromagnetic precession is an important mechanism underpinning the magnetisation processes in ferromagnetic materials. In thin-film ferromagnets and ferromagnetic/non-magnetic multilayers, the role of precession and damping can be critical for spintronic device functionality and as a consequence there has been significant research activity. This paper presents a review of damping in ferromagnetic thin-films and multilayers and collates the results of many experimental studies to present a coherent synthesis of the field. The terms that are used to define damping are discussed with the aim of providing consistent definitions for damping phenomena. A description of the theoretical basis of damping is presented from early developments to the latest discussions of damping in ferromagnetic thin-films and multilayers. An overview of the time and frequency domain methods used to study precessional magnetisation behaviour and damping in thin-films and multilayers is also presented. Finally, a review of the experimental observations of magnetic damping in ferromagnetic thin-films and multilayers is presented with the most recent explanations. This brings together the results from many studies and includes the effects of ferromagnetic film thickness, the effects of composition on damping in thin-film ferromagnetic alloys, the influence of non-magnetic dopants in ferromagnetic films and the effects of combining thin-film ferromagnets with various non-magnetic layers in multilayered configurations.

  3. Evolution of damping in ferromagnetic/nonmagnetic thin film bilayers as a function of nonmagnetic layer thickness

    Science.gov (United States)

    Azzawi, S.; Ganguly, A.; Tokaç, M.; Rowan-Robinson, R. M.; Sinha, J.; Hindmarch, A. T.; Barman, A.; Atkinson, D.

    2016-02-01

    The evolution of damping in Co/Pt, Co/Au, and Ni81Fe19 /Pt bilayers was studied with increasing nonmagnetic (NM) heavy-metal layer thicknesses in the range 0.2 nm ≤tNM≤10 nm , where tNM is the NM layer thickness. Magnetization precession was measured in the time domain using time-resolved magneto-optical Kerr effect magnetometry. Fitting of the data with a damped sinusoidal function was undertaken in order to extract the phenomenological Gilbert damping coefficient α . For Pt-capped Co and Ni81Fe19 layers a large and complex dependence of α on the Pt layer thickness was observed, while for Au capping no significant dependence was observed. It is suggested that this difference is related to the different localized spin-orbit interaction related to intermixing and to d -d hybridization of Pt and Au at the interface with Co or Ni81Fe19 . Also it was shown that damping is affected by the crystal structure differences in FM thin films and at the interface, which can modify the spin-diffusion length and the effective spin-mixing conductance. In addition to the intrinsic damping an extrinsic contribution plays an important role in the enhancement of damping when the Pt capping layer is discontinuous. The dependence of damping on the nonmagnetic layer thickness is complex but shows qualitative agreement with recent theoretical predictions.

  4. Critical behavior of ferromagnetic Ising thin films

    International Nuclear Information System (INIS)

    Cossio, P.; Mazo-Zuluaga, J.; Restrepo, J.

    2006-01-01

    In the present work, we study the magnetic properties and critical behavior of simple cubic ferromagnetic thin films. We simulate LxLxd films with semifree boundary conditions on the basis of the Monte Carlo method and the Ising model with nearest neighbor interactions. A Metropolis dynamics was implemented to carry out the energy minimization process. For different film thickness, in the nanometer range, we compute the temperature dependence of the magnetization, the magnetic susceptibility and the fourth order Binder's cumulant. Bulk and surface contributions of these quantities are computed in a differentiated fashion. Additionally, according to finite size scaling theory, we estimate the critical exponents for the correlation length, magnetic susceptibility, and magnetization. Results reveal a strong dependence of critical temperature and critical exponents on the film thickness. The obtained critical exponents are finally compared to those reported in literature for thin films

  5. Field noise near ferromagnetic films

    Science.gov (United States)

    McMichael, Robert; Liu, Hau-Jian; Yoon, Seungha

    Thermally driven magnetization fluctuations can be viewed as a nuisance noise source or as interesting physics. For example, mag noise in a field sensor may set the minimum detectable field of that sensor. On the other hand, the field noise spectrum reflects the dynamics of the magnetic components, which are essential for device operation. Here, we model the field noise spectrum near the surface of a magnetic film due to thermal spin waves, and we calculate its effect on the T1 relaxation rate of a nearby nitrogen-vacancy (NV) center spin. The model incorporates four components: the spin wave dispersion of the magnetization in a finite-thickness film, thermal excitation of spin waves, the coupling geometry between waves in the film and an external point dipole and finally, the relaxation dynamics of the NV spin. At a distance of 100 nm above a 50 nm thick permalloy film, we find that the strongest stray fields are along the film normal and parallel to the magnetization, on the order of 1 mA m-1 Hz- 1 / 2 or 1 nT Hz- 1 / 2, yielding relaxation times on the order of 10 μs. The spin wave field noise can dominate the intrinsic relaxation, (T1 1 ms) of the NV center spin.

  6. Domain morphology in ultrathin ferromagnetic films with perpendicular magnetization

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, B. [Department of Secondary Science and Mathematics Education, University of Mersin, Yenisehir Campus, 33169 Mersin (Turkey)]. E-mail: bengukaplan@yahoo.com

    2006-03-15

    We determine the minimal domain structure for the equilibrium thickness of stripes as well as for the minimal energy of the domain configuration in ultrathin films of ferromagnetically coupled spins, where the easy direction of magnetization is perpendicular to the film. It is found that the equilibrium thickness of stripes and walls depend on the exchange energy. The normalized anisotropy, f, depends on interplay between the magnetic and anisotropy energies and is almost independent of the exchange energy inside the wall. The results are compared with the experimental data for thin Ag/Fe/Ag (0 0 1) films and a good coincidence is obtained between both results.

  7. Anomalous Hall effect scaling in ferromagnetic thin films

    KAUST Repository

    Grigoryan, Vahram L.

    2017-10-23

    We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

  8. Ferromagnetic film on a superconducting substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2001-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M{sub 0} on a superconducting (SC) substrate. At 4{pi}M{sub 0}film, l, scales as (l/4{pi}{lambda}{sub L})=(l{sub N}/4{pi}{lambda}{sub L}){sup 2/3} with the domain width on a normal (nonsuperconducting) substrate, l{sub N}/4{pi}{lambda}{sub L}>>1; {lambda}{sub L} being the London penetration length.

  9. Ferromagnetic film on a superconducting substrate

    International Nuclear Information System (INIS)

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2001-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M 0 on a superconducting (SC) substrate. At 4πM 0 c1 the SC is in the Meissner state and the equilibrium domain width in the film, l, scales as (l/4πλ L )=(l N /4πλ L ) 2/3 with the domain width on a normal (nonsuperconducting) substrate, l N /4πλ L >>1; λ L being the London penetration length

  10. Statistical properties of Barkhausen noise in amorphous ferromagnetic films.

    Science.gov (United States)

    Bohn, F; Corrêa, M A; Carara, M; Papanikolaou, S; Durin, G; Sommer, R L

    2014-09-01

    We investigate the statistical properties of the Barkhausen noise in amorphous ferromagnetic films with thicknesses in the range between 100 and 1000 nm. From Barkhausen noise time series measured with the traditional inductive technique, we perform a wide statistical analysis and establish the scaling exponents τ,α,1/σνz, and ϑ. We also focus on the average shape of the avalanches, which gives further indications on the domain-wall dynamics. Based on experimental results, we group the amorphous films in a single universality class, characterized by scaling exponents τ=1.28±0.02,α=1.52±0.3, and 1/σνz=ϑ=1.83±0.03, values compatible with that obtained for several bulk amorphous magnetic materials. Besides, we verify that the avalanche shape depends on the universality class. By considering the theoretical models for the dynamics of a ferromagnetic domain wall driven by an external magnetic field through a disordered medium found in literature, we interpret the results and identify an experimental evidence that these amorphous films, within this thickness range, present a typical three-dimensional magnetic behavior with predominant short-range elastic interactions governing the domain-wall dynamics. Moreover, we provide experimental support for the validity of a general scaling form for the average avalanche shape for non-mean-field systems.

  11. Ferromagnetism and temperature-dependent electronic structure in metallic films

    International Nuclear Information System (INIS)

    Herrmann, T.

    1999-01-01

    In this work the influence of the reduced translational symmetry on the magnetic properties of thin itinerant-electron films and surfaces is investigated within the strongly correlated Hubbard model. Firstly, the possibility of spontaneous ferromagnetism in the Hubbard model is discussed for the case of systems with full translational symmetry. Different approximation schemes for the solution of the many-body problem of the Hubbard model are introduced and discussed in detail. It is found that it is vital for a reasonable description of spontaneous ferromagnetism to be consistent with exact results concerning the general shape of the single-electron spectral density in the limit of strong Coulomb interaction between the electrons. The temperature dependence of the ferromagnetic solutions is discussed in detail by use of the magnetization curves as well as the spin-dependent quasi particle spectrum. For the investigation of thin films and surfaces the approximation schemes for the bulk system have to be generalized to deal with the reduced translational symmetry. The magnetic behavior of thin Hubbard films is investigated by use of the layer dependent magnetization as a function of temperature as well as the thickness of the film. The Curie-temperature is calculated as a function of the film thickness. Further, the magnetic stability at the surface is discussed in detail. Here it is found that for strong Coulomb interaction the magnetic stability at finite temperatures is reduced at the surface compared to the inner layers. This observation clearly contradicts the well-known Stoner picture of band magnetism and can be explained in terms of general arguments which are based on exact results in the limit of strong Coulomb interaction. The magnetic behavior of the Hubbard films can be analyzed in detail by inspecting the local quasi particle density of states as well as the wave vector dependent spectral density. The electronic structure is found to be strongly spin

  12. Ferromagnetic Film on a Superconducting Substrate

    OpenAIRE

    Bulaevskii, L. N.; Chudnovsky, E. M.

    2000-01-01

    We study the equilibrium domain structure and magnetic flux around a ferromagnetic (FM) film with perpendicular magnetization M_0 on a superconducting (SC) substrate. At 4{\\pi}M_0> 1. Here \\lambda_L is the London penetration length. For 4{\\pi}M_0 > H_{c1} and l_{N} in excess of about 35 {\\lambda}_{L}, the domains are connected by SC vortices. We argue that pinning of vortices by magnetic domains in FM/SC multilayers can provide high critical currents.

  13. Skyrmion clusters from Bloch lines in ferromagnetic films

    KAUST Repository

    Garanin, Dmitry A.

    2017-12-29

    Conditions under which various skyrmion objects emerge in experiments on thin magnetic films remain largely unexplained. We investigate numerically centrosymmetric spin lattices in films of finite thickness with ferromagnetic exchange, magnetic anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination of Bloch lines, the magnetic domains evolve into individual skyrmions, biskyrmions, or more complex topological objects. While the geometry of such objects is sensitive to the parameters, their topological charge is uniquely determined by the topological charge of Bloch lines inside the magnetic domain from which the object emerges.

  14. Influence of the thickness of BiFeO3 on the ferromagnet properties of layered multiferroic CoFe2O4-BiFeO3 films

    Science.gov (United States)

    Liu, Y. Q.; Wu, Y. H.; Zhang, J.; Wei, M. B.; Liu, Y.; Li, D.; Yang, L. L.; Yang, J. H.

    2013-03-01

    Multiferroic layered films consisting of CoFe2O4-BiFeO3 (CFO-BFO) with increasing the thickness of BFO layer have been prepared on the LaNiO3 (LNO)-buffered Si (1 0 0) substrate via a simple spin-coating process. The thickness effects of BFO layer on the magnetic properties of CFO-BFO films have been investigated in detail. The X-ray diffraction results testify that magnetic CFO and ferroelectric BFO phases coexist in the heterostructured films. The HRTEM images show the well-defined microstructure of the CFO layer on LNO buffer. The magnetic measurement reveal that, with increasing the BFO thickness, the Ms of CFO-BFO films will be enhanced due to the stress. The film with 400 nm thickness BFO layers demonstrates the highest Ms value of 230 emu/cm3, which exhibits 137.1% enhancement than that of the film without BFO layers.

  15. Ferromagnetic stripe domains in ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaplan, B. [Department of Secondary Science and Mathematics Education, University of Mersin, Yenisehir Campus, 33169 Mersin (Turkey)]. E-mail: bengukaplan@yahoo.com

    2005-03-01

    Using simple magnetostatic considerations, we discuss the domain structure and the domain-wall width, {omega}, in ultrathin magnetic films (of a few monolayer thickness) and in an atomic monolayer. The demagnetizing energy is calculated in a continuum theory which is valid provided that the domains are large compared with the lattice spacing. The calculated domain-wall width, {omega}, and the surface anisotropy constant, K{sub s}, are compared with the experimental data for thin epitaxial Co/Au (111) films and a good coincidence is obtained between both results.

  16. Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet-ferromagnet heterostructures.

    Science.gov (United States)

    Lenk, Daniel; Zdravkov, Vladimir I; Kehrle, Jan-Michael; Obermeier, Günter; Ullrich, Aladin; Morari, Roman; Krug von Nidda, Hans-Albrecht; Müller, Claus; Kupriyanov, Mikhail Yu; Sidorenko, Anatolie S; Horn, Siegfried; Deminov, Rafael G; Tagirov, Lenar R; Tidecks, Reinhard

    2016-01-01

    In nanoscale layered S/F1/N/F2/AF heterostructures, the generation of a long-range, odd-in-frequency spin-projection one triplet component of superconductivity, arising at non-collinear alignment of the magnetizations of F1 and F2, exhausts the singlet state. This yields the possibility of a global minimum of the superconducting transition temperature T c, i.e., a superconducting triplet spin-valve effect, around mutually perpendicular alignment. The superconducting triplet spin valve is realized with S = Nb a singlet superconductor, F1 = Cu41Ni59 and F2 = Co ferromagnetic metals, AF = CoO x an antiferromagnetic oxide, and N = nc-Nb a normal conducting (nc) non-magnetic metal, which serves to decouple F1 and F2. The non-collinear alignment of the magnetizations is obtained by applying an external magnetic field parallel to the layers of the heterostructure and exploiting the intrinsic perpendicular easy-axis of the magnetization of the Cu41Ni59 thin film in conjunction with the exchange bias between CoO x and Co. The magnetic configurations are confirmed by superconducting quantum interference device (SQUID) magnetic moment measurements. The triplet spin-valve effect has been investigated for different layer thicknesses, d F1, of F1 and was found to decay with increasing d F1. The data is described by an empirical model and, moreover, by calculations using the microscopic theory. The long-range triplet component of superconducting pairing is generated from the singlet component mainly at the N/F2 interface, where the amplitude of the singlet component is suppressed exponentially with increasing distance d F1. The decay length of the empirical model is found to be comparable to twice the electron mean free path of F1 and, thus, to the decay length of the singlet component in F1. Moreover, the obtained data is in qualitative agreement with the microscopic theory, which, however, predicts a (not investigated) breakdown of the triplet spin-valve effect for d F1 smaller

  17. Comment on ``Ferromagnetic film on a superconducting substrate''

    Science.gov (United States)

    Sonin, E. B.

    2002-10-01

    A superconducting substrate is not able to shrink drastically domains in a ferromagnetic film, contrary to the prediction of Bulaevskii and Chudnovsky. This is shown on the basis of the exact solution for the stripe domain structure.

  18. Unusual metal-insulator transition in disordered ferromagnetic films

    International Nuclear Information System (INIS)

    Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

    2012-01-01

    We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

  19. Effects of surface and bulk transverse fields on critical behaviour of ferromagnetic films

    International Nuclear Information System (INIS)

    Saber, A.; Lo Russo, S.; Mattei, G.

    2002-02-01

    The influence of surface and bulk transverse fields on the critical behaviour of a ferromagnetic Ising film is studied using the effective field theory based on a single-site cluster method. Surface exchange enhancement is considered and a critical value is obtained. The dependence of the critical uniform transverse field on film thickness, phase diagrams in the fields, critical surface transverse field versus the bulk one, and exchange coupling ratio are presented. (author)

  20. Ferromagnetic transitions of a spin-one Ising film in a surface and bulk transverse fields

    International Nuclear Information System (INIS)

    Saber, A.; Lo Russo, S.; Mattei, G.; Mattoni, A.

    2002-01-01

    Using the effective field theory method, we have calculated the Curie temperature of a spin-one Ising ferromagnetic film in a surface and bulk transverse fields. Numerical calculations give phase diagrams under various parameters. Surface exchange enhancement is considered. The dependence of the critical transverse field on film thickness, and phase diagrams in the fields, critical surface transverse field versus the bulk one are presented

  1. Oscillatory magnetism of palladium nano-film depending on its film thickness: Density functional study

    International Nuclear Information System (INIS)

    Hong, Soon Cheol; Lee, Jae Il; Wu, Ruqian

    2007-01-01

    In order to investigate the magnetism of palladium nano-films, we performed first-principles calculations employing the highly precise full-potential linerized augmented plane-wave method based on density functional theory. The magnetism is investigated as a function of the thickness of the Pd thickness within a range of 1-21 monolayers. The magnetic stability of the Pd nano-films is calculated to depend delicately on its thickness. The ferromagnetic state is calculated to be stable for only some particular thicknesses of 1, 3, 9, and 15 layers. Invoking the ferromagnetism is not due to the localization at the surface but to the high density of states (DOS) at Fermi energy at the second layer from the surface

  2. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  3. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    Home; Journals; Pramana – Journal of Physics; Volume 74; Issue 4. Density ... Prasenjit Sen. Research Articles Volume 74 Issue 4 April 2010 pp 653-659 ... Only a six-layer Cs film is found to have a ferromagnetic (FM) state which is degenerate with a paramagnetic (PM) state within the accuracy of these calculations.

  4. Thickness dependence study of current-driven ferromagnetic resonance in Y3Fe5O12/heavy metal bilayers

    Science.gov (United States)

    Fang, Z.; Mitra, A.; Westerman, A. L.; Ali, M.; Ciccarelli, C.; Cespedes, O.; Hickey, B. J.; Ferguson, A. J.

    2017-02-01

    We use ferromagnetic resonance to study the current-induced torques in YIG/heavy metal bilayers. YIG samples with thickness varying from 14.8 nm to 80 nm, with the Pt or Ta thin film on top, are measured by applying a microwave current into the heavy metals and measuring the longitudinal DC voltage generated by both spin rectification and spin pumping. From a symmetry analysis of the FMR lineshape and its dependence on YIG thickness, we deduce that the Oersted field dominates over spin-transfer torque in driving magnetization dynamics.

  5. Spin-wave resonance frequency in ferromagnetic thin film with interlayer exchange coupling and surface anisotropy

    Science.gov (United States)

    Zhang, Shuhui; Rong, Jianhong; Wang, Huan; Wang, Dong; Zhang, Lei

    2018-01-01

    We have investigated the dependence of spin-wave resonance(SWR) frequency on the surface anisotropy, the interlayer exchange coupling, the ferromagnetic layer thickness, the mode number and the external magnetic field in a ferromagnetic superlattice film by means of the linear spin-wave approximation and Green's function technique. The SWR frequency of the ferromagnetic thin film is shifted to higher values corresponding to those of above factors, respectively. It is found that the linear behavior of SWR frequency curves of all modes in the system is observed as the external magnetic field is increasing, however, SWR frequency curves are nonlinear with the lower and the higher modes for different surface anisotropy and interlayer exchange coupling in the system. In addition, the SWR frequency of the lowest (highest) mode is shifted to higher (lower) values when the film thickness is thinner. The interlayer exchange coupling is more important for the energetically higher modes than for the energetically lower modes. The surface anisotropy has a little effect on the SWR frequency of the highest mode, when the surface anisotropy field is further increased.

  6. Film thickness determination by grazing incidence diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Battiston, G. A.; Gerbasi, R. [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

    1996-09-01

    Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

  7. Hexagonal metal modifications and thin film ferromagnetism

    NARCIS (Netherlands)

    Hueger, E.; Wormeester, Herbert; Bauer, E.

    1999-01-01

    Epitaxial strain-stabilized hexagonal modifications can occur in many metal films grown on (100) surfaces of cubic crystals and can have a strong influence on their magnetic properties. The necessary conditions for the formation of hcp crystals, identification criteria, examples and implications for

  8. Peltier cooling and onsager reciprocity in ferromagnetic thin films.

    Science.gov (United States)

    Avery, A D; Zink, B L

    2013-09-20

    We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

  9. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

  10. Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

    International Nuclear Information System (INIS)

    Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

    2000-01-01

    Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

  11. Ferromagnetic resonance study of Fe50Ag50 granular film

    International Nuclear Information System (INIS)

    Sarmiento, G.; Fdez-Gubieda, M.L.; Siruguri, V.; Lezama, L.; Orue, I.

    2007-01-01

    Fe 50 Ag 50 granular film, produced by the pulsed laser deposition technique, has been studied using ferromagnetic resonance (FMR) at temperatures ranging from 4 to 300K. Three different resonance modes are well observed in the whole temperature range. We have also studied the angular evolution of the resonance peaks at three different temperatures T=150, 250, 300K. The thermal and the angular evolution of the three resonance fields has been interpreted on the basis of the existence of different magnetic coupling between the Fe nanoparticles and a weakly magnetized interface

  12. Magnetization reversal in ferromagnetic film through solitons by electromagnetic field

    International Nuclear Information System (INIS)

    Veerakumar, V.; Daniel, M.

    2001-07-01

    We study the reversal of magnetization in an isotopic ferromagnetic film free from charges by exposing it to a circularly polarized electromagnetic (EM) field. The magnetization excitations are obtained in the form of line and lump solitons of the completely integrable modified KP-II equation which is derived using a reductive perturbation method from the set of coupled Landau-Lifschitz and Maxwell equations. It is observed that when the polarization of the EM-field is reversed followed by a rotation, for every (π)/2-degrees, the magnetization is reversed. (author)

  13. Room temperature ferromagnetism down to 10 nanometer Ni–Fe–Mo alloy films

    International Nuclear Information System (INIS)

    Banerjee, Mitali; Majumdar, A.K.; Rai, S.; Tiwari, Pragya; Lodha, G.S.; Banerjee, A.; Nair, K.G.M; Sarkar, Jayanta; Choudhary, R.J.; Phase, D.M.

    2013-01-01

    Magnetic behavior of a few pulsed laser deposited soft ferromagnetic thin films of Ni–Fe–Mo alloys of different thickness on sapphire single crystals is interpreted on the basis of their structural characteristics. Highly textured thin films have high void density due to island-like growth. X-ray reflectivity (XRR) of the thin films indicate that instead of a uniform density there are effectively three layers with density gradient across the thickness, which is further supported by atomic force microscopy and cross-sectional scanning electron microscopy. Rutherford backscattering spectroscopy and energy dispersive spectrum measurements reveal that the composition in the films is not too far from that of the bulk target with a trend of enhanced Fe yield in the films. The structural disorder strongly affected the magnetic property of the films resulting in much higher values of the Curie temperature T C and coercive field H C than those of the bulk targets. Bifurcations of low-field zero-field-cooled and field-cooled magnetization reflect the disorder-induced anisotropy in the thin films. The spin wave stiffness constants D are higher than their bulk counterparts which are supportive of the enhanced Fe yield in the films. The saturation magnetization, M calculated from measurements in field transverse to the films strongly supports the thickness found from XRR. Finally, even the 10 nm thin films have sizable M and H C and T C > 300 K, making them good candidates for magnetic applications. Overall, the magnetic behavior and the structural characteristics have reasonably complemented each other. - Highlights: • Correlated structural and magnetic properties of pulsed laser grown Ni–Fe–Mo filmsFilm thickness from scanning microscopy agrees with X-ray reflectivity analysis. • Experiments reveal that targets and the films have somewhat similar compositions. • Low-field M(T) shows spin-glass-like features in all films in contrast to the bulk. • Even 10

  14. Sub-micrometer yttrium iron garnet LPE films with low ferromagnetic resonance losses

    Science.gov (United States)

    Dubs, Carsten; Surzhenko, Oleksii; Linke, Ralf; Danilewsky, Andreas; Brückner, Uwe; Dellith, Jan

    2017-05-01

    Using a liquid phase epitaxy (LPE) technique (1 1 1) yttrium iron garnet (YIG) films with thicknesses of  ≈100 nm and surface roughnesses as low as 0.3 nm have been grown on (1 1 1) gadolinium gallium garnet (GGG) substrates as a basic material for spin-wave propagation experiments in microstructured waveguides. The continuously strained films exhibit nearly perfect crystallinity without significant mosaicity and with effective lattice misfits of Δ {{a}\\bot}/{{a}s}≈ {{10}-4} and below. The film/substrate interface is extremely sharp without broad interdiffusion layer formation. All LPE films exhibit a nearly bulk-like saturation magnetization of (1800+/- 20 ) Gs and an ‘easy cone’ anisotropy type with extremely small in-plane coercive fields  <0.2 Oe. There is a rather weak in-plane magnetic anisotropy with a pronounced six-fold symmetry observed for the saturation field  <1.5 Oe. No significant out-of-plane anisotropy is observed, but a weak dependence of the effective magnetization on the lattice misfit is detected. The narrowest ferromagnetic resonance linewidth is determined to be 1.4 Oe @ 6.5 GHz which is the lowest value reported so far for YIG films of 100 nm thicknesses and below. The Gilbert damping coefficient for investigated LPE films is estimated to be close to 1× {{10}-4} .

  15. Thickness dependent properties of magnetic ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Cong, Bach Thanh [Faculty of Physics, Hanoi University of Science, VNU, 334 Nguyen Trai, Hanoi (Viet Nam); Thao, Pham Huong, E-mail: hthao82@gmail.com [Faculty of Physics, Hanoi University of Science, VNU, 334 Nguyen Trai, Hanoi (Viet Nam); Faculty of Physics, Hue College of Education, 32 Le Loi, Thua Thien Hue (Viet Nam)

    2013-10-01

    The dependence of magnetic properties on the thickness of few-layer thin films is investigated at finite temperature using the functional integral method for solving the Heisenberg spin model. The temperature dependence of the ultra-thin film's magnetization and Curie temperature are calculated in terms of the mean field theory and of the Gaussian spin fluctuation approximations. It has been shown that both Curie temperature and temperature interval, where the magnetization is non-zero, are strongly reduced with the thickness reduction by using the spin fluctuation approximations in comparison with the mean field results. Curie temperature dependence on the film thickness calculated numerically well agrees with the experimental data for Ni/Cu(1 0 0) and Ni/Cu(1 1 1) ultrathin films.

  16. Ferromagnetism and interlayer exchange coupling in thin metallic films

    Energy Technology Data Exchange (ETDEWEB)

    Kienert, Jochen

    2008-07-15

    This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

  17. Anion vacancy-mediated ferromagnetism in atomic-thick Ni3N nanosheets

    Science.gov (United States)

    Xia, Baorui; Wang, Tongtong; Chi, Xiao; Yu, Xiaojiang; Liu, Peitao; Zhang, Jingyan; Xi, Shibo; Du, Yonghua; Gao, Daqiang

    2017-12-01

    Realizing spin and electronic behavior of two-dimensional ultrathin nanosheets is significant to construct next generation nanoelectronics. Here, atomic-thick Ni3N nanosheets with clear room temperature ferromagnetism and high saturation magnetization (1.2 emu/g) are reported. X-ray magnetic circular dichroism and first-principles calculation results give the evidence that the observed intrinsic ferromagnetism in Ni3N nanosheets originates from the surface N-deficiency, where alignments of localized large magnetic moments of Ni in the vicinity of the N defect can be aligned parallel to activate macroscopic ferromagnetism. These ultrathin Ni3N nanosheets show great potential application in next-generation electron devices.

  18. Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-05-15

    Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

  19. Surface melting of deuterium hydride thick films

    OpenAIRE

    Zeppenfeld, P.; Bienfait, M.; Feng Chuan Liu,; Vilches, O.E.; Coddens, G.

    1990-01-01

    Quasi-elastic neutron scattering has been used to measure, below the bulk melting temperature, the thickness and the diffusion coefficient of the mobile surface layer of 8 and 10 layer thick films of deuterium hydride (HD) condensed on MgO(100). The measurements show that the close-packed surface of solid HD surface melts gradually, with the thickness of the melted layer increasing from 0.5 to 6 molecular layers as the temperature rises from 4 K to 0.05 K below the bulk melting temperature. T...

  20. Synchrotron radiation topographic study of the thick ferromagnetic-fan interface in MnP

    Energy Technology Data Exchange (ETDEWEB)

    Baruchel, J [ESRF, BP 220, 38043 Grenoble (France); Medrano, C [Escuela Universitaria Politecnica, 44003 Teruel (Spain); Schlenker, M [Lab. Louis Neel, CNRS, BP 166, 38042 Grenoble (France)

    2005-05-21

    The coexistence of the ferromagnetic and fan phases in a (001) MnP crystal, under a magnetic field applied along the b direction, is investigated in real time, by synchrotron radiation diffraction topography, at T {approx} 48 K. The ferromagnetic-fan interface includes bulk transition regions, elongated along a, and thick enough along the b direction (in the 10{sup -4} m range) to produce a substantial contribution to diffraction. The Bragg condition changes continuously across these regions. This configuration, which involves magnetic charge distribution, is in sharp distinction with the usual two-dimensional character of magnetic walls and phase boundaries. The thick interface is likely to comprise a set of intermediate magnetic states.

  1. Spin-torque ferromagnetic resonance in arbitrarily magnetized thin films

    Science.gov (United States)

    Sklenar, Joseph

    The spin Hall effect (SHE) in non-magnetic metals can be used to generate spin-transfer-torque (STT), subsequently inducing ferromagnetic resonance (FMR) in magnetic thin films; this experimental method is termed spin-torque ferromagnetic resonance (ST-FMR). Most ST-FMR experiments that are reported have an applied magnetic field in the plane of the sample and the research focuses on material combinations that have large and efficient STT. The most common way ST-FMR signals are detected is through an anisotropic magnetoresistance (AMR) rectification process. In this work we will present ST-FMR results in thin films where the magnetization has both an in-plane and out-of-plane component. The arbitrary magnetization direction is achieved by tipping the applied magnetic field out of the sample plane. We find that when the material system is a permalloy/Pt bilayer, ST-FMR signals are not mirror-symmetric upon magnetic field reversal . This is because the combination of both a STT from the bulk SHE and the Oersted field-like torque from the device do not drive the dynamics in the same manner when the field is reversed. We interpret our results in the Py/Pt experiment by extending an already established ST-FMR lineshape model to describe the general case of arbitrarily magnetized films. We compare and contrast our Py/Pt experiment with another system we measured, a Py/MoS2 bilayer. For the Py/MoS2 system, in-plane experiments suggest that a large STT is present and are comparable to what is observed for the more traditional Py/Pt system . On the other hand, the out-of-plane experiment for the Py/MoS2 system is qualitatively very different from Py/Pt. Our results suggest that ST-FMR experiments for arbitrarily magnetized magnetic films are useful in characterizing STT generated from interface rather than bulk effects. Work at Northwestern was supported by the U.S. Department of Energy, Office of Basic Energy Sciences, Materials Science and Engineering Division under grant

  2. Percolation effect in thick film superconductors

    International Nuclear Information System (INIS)

    Sali, R.; Harsanyi, G.

    1994-01-01

    A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

  3. Self-assembly of ferromagnetic organic-inorganic perovskite-like films.

    Science.gov (United States)

    Akhtar, Naureen; Polyakov, Alexey O; Aqeel, Aisha; Gordiichuk, Pavlo; Blake, Graeme R; Baas, Jacob; Amenitsch, Heinz; Herrmann, Andreas; Rudolf, Petra; Palstra, Thomas T M

    2014-12-10

    Perovskite-based organic-inorganic hybrids hold great potential as active layers in electronics or optoelectronics or as components of biosensors. However, many of these applications require thin films grown with good control over structure and thickness--a major challenge that needs to be addressed. The work presented here is an effort towards this goal and concerns the layer-by-layer deposition at ambient conditions of ferromagnetic organic-inorganic hybrids consisting of alternating CuCl4-octahedra and organic layers. The Langmuir-Blodgett technique used to assemble these structures provides intrinsic control over the molecular organization and film thickness down to the molecular level. Magnetic characterization reveals that the coercive field for these thin films is larger than that for solution-grown layered bulk crystals. The strategy presented here suggests a promising cost effective route to facilitate the excellently controlled growth of sophisticated materials on a wide variety of substrates that have properties relevant for the high density storage media and spintronic devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Properties of conductive thick-film inks

    Science.gov (United States)

    Holtze, R. F.

    1972-01-01

    Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

  5. Metallic oxide switches using thick film technology

    Science.gov (United States)

    Patel, D. N.; Williams, L., Jr.

    1974-01-01

    Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

  6. Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Tekgül, Atakan, E-mail: atakantekgul@gmail.com [Akdeniz University, Physics Department, Science Faculty, TR-07058 Antalya (Turkey); Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Alper, Mürsel [Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Kockar, Hakan [Balikesir University, Physics Department, Science and Literature Faculty, TR-10145 Balikesir (Turkey)

    2017-01-01

    The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current–time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of −0.3 and −1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices. - Highlights: • The much thinner (0.5 nm) Cu layer was used to obtain the GMR effect on the electrodeposited CoFe/Cu multilayers. • All samples exhibited GMR and the maximum GMR value was 5.5%. • The M{sub s} and the H{sub c} changed with increasing magnetic layer thickness.

  7. Substrate morphology repetition in 'thick' polymer films

    International Nuclear Information System (INIS)

    Pietsch, Ullrich; Panzner, Tobias; Pfeiffer, Franz; Robinson, Ian K.

    2005-01-01

    Using Grazing-incidence small-angle scattering (GISAXS) technique we investigated the surface morphology of polymer films spin-coated on different silicon substrates. As substrates we used either technologically smooth silicon wafers or the same silicon wafer coated with thin aluminium or gold films which show a granular structure at the surface. Although the polymer thickness exceeds 300nm the GISAXS pattern of the film shows the same in-plane angle distribution Δ2Θ as the underlying substrate. Annealing the polymer films at a temperature above its glass transition temperature Δ2Θ changed from a broad to a narrow distribution as it is typically for films on pure silicon. The experiment can be interpreted by roughness replication and density fluctuation within the polymer film created while spin-coating at room temperature. Due to the low segment mobility there are density fluctuations which repeat the surface morphology of the substrate. Above the glass temperature the polymer density can be homogenized independently from the morphology of the substrate

  8. Hexaferrite multiferroics: from bulk to thick films

    Science.gov (United States)

    Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

    2018-03-01

    We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

  9. β -detected NMR spin relaxation in a thin film heterostructure of ferromagnetic EuO

    Science.gov (United States)

    MacFarlane, W. A.; Song, Q.; Ingle, N. J. C.; Chow, K. H.; Egilmez, M.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Levy, C. D. P.; Morris, G. D.; Parolin, T. J.; Pearson, M. R.; Saadaoui, H.; Salman, Z.; Wang, D.

    2015-08-01

    We present β -detected NMR measurements of the spin-lattice relaxation of +8Li implanted into an epitaxial heterostructure based on a 100 nm thick film of ferromagnetic (FM) EuO as a function of temperature through its FM transition. In the FM state, the spin-lattice relaxation rate follows the same temperature dependence, determined by magnon scattering mechanisms, observed in the bulk by 153Eu NMR, but above 40 K, the signal is wiped out. We also find that +8Li stopped in material adjacent to the magnetic layer exhibits spin relaxation related to the critical slowing of the Eu spins. A particularly strong relaxation in the Au overlayer suggests an unusual strong nonlocal coupling mechanism to 8Li in the metal.

  10. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

  11. Thick-film analysis: literature search and bibliography

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

  12. Thickness dependence of the triplet spin-valve effect in superconductor–ferromagnet–ferromagnet heterostructures

    Directory of Open Access Journals (Sweden)

    Daniel Lenk

    2016-07-01

    Full Text Available Background: In nanoscale layered S/F1/N/F2/AF heterostructures, the generation of a long-range, odd-in-frequency spin-projection one triplet component of superconductivity, arising at non-collinear alignment of the magnetizations of F1 and F2, exhausts the singlet state. This yields the possibility of a global minimum of the superconducting transition temperature Tc, i.e., a superconducting triplet spin-valve effect, around mutually perpendicular alignment.Results: The superconducting triplet spin valve is realized with S = Nb a singlet superconductor, F1 = Cu41Ni59 and F2 = Co ferromagnetic metals, AF = CoOx an antiferromagnetic oxide, and N = nc-Nb a normal conducting (nc non-magnetic metal, which serves to decouple F1 and F2. The non-collinear alignment of the magnetizations is obtained by applying an external magnetic field parallel to the layers of the heterostructure and exploiting the intrinsic perpendicular easy-axis of the magnetization of the Cu41Ni59 thin film in conjunction with the exchange bias between CoOx and Co. The magnetic configurations are confirmed by superconducting quantum interference device (SQUID magnetic moment measurements. The triplet spin-valve effect has been investigated for different layer thicknesses, dF1, of F1 and was found to decay with increasing dF1. The data is described by an empirical model and, moreover, by calculations using the microscopic theory.Conclusion: The long-range triplet component of superconducting pairing is generated from the singlet component mainly at the N/F2 interface, where the amplitude of the singlet component is suppressed exponentially with increasing distance dF1. The decay length of the empirical model is found to be comparable to twice the electron mean free path of F1 and, thus, to the decay length of the singlet component in F1. Moreover, the obtained data is in qualitative agreement with the microscopic theory, which, however, predicts a (not investigated breakdown of the

  13. The role of mesoscopic structuring on the intermixing of spin-polarised conduction channels in thin-film ferromagnets for spintronics

    Science.gov (United States)

    Alcer, D.; Atkinson, D.

    2017-09-01

    The separation of spin-up and spin-down conduction channels is fundamental to electronic transport in ferromagnets and essential for spintronic functionality. The spin states available for conduction are defined by the ferromagnetic material, but additional physical factors can affect scattering and modify the spin-dependence of conduction. Here the effect of mesoscopic structuring, arising during the growth of ferromagnetic thin films, on the electronic transport was investigated. Resistivity and anisotropic magnetoresistance were measured in a series of Ni80Fe20 thin films as a function of nominal film thickness from 3 {nm} up to 20 {nm}. The observed thickness dependence of the resisivity and magnetic anisotropy of resistivity are interpreted using a model that accounts for the macroscopic structuring from the growth of the films and incorporates a structural dependence of the spin-flip scattering. The model shows good agreement for both the thickness dependence of the resistivity and the reduction of the anisotropic magnetoresistivity. The latter indicating that increasing mixing of the conducting spin channels occurs in ultra-thin films, mainly a consequence of macroscopic structuring of the films.

  14. Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

    Science.gov (United States)

    Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

    2017-09-01

    Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

  15. Voltage control of a magnetization easy axis in piezoelectric/ferromagnetic hybrid films

    International Nuclear Information System (INIS)

    Kim, Sang-Koog; Lee, Jeong-Won; Shin, Sung-Chul; Song, Han Wook; Lee, Chang Ho; No, Kwangsoo

    2003-01-01

    We have established a spontaneous magnetization-axis switching in ferromagnetic films by applying a low voltage to a piezoelectric layer in a newly developed hybrid system comprised of the ferromagnetic and piezoelectric films. The magnetization easy axis along which a spontaneous magnetization is oriented, is readily switchable by a voltage without applying an external magnetic field through both the inverse magnetostrictive and piezoelectric effects of CoPd and lead-zirconate-titanate alloy films, respectively. This challenging work provides a new way into the memory writing as well as storage means of ultrahigh bit densities in nonvolatile magnetic random access memory

  16. Control of room-temperature defect-mediated ferromagnetism in VO{sub 2} films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Tsung-Han, E-mail: tyang3@ncsu.edu [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States); Nori, Sudhakar; Mal, Siddhartha; Narayan, Jagdish [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

    2011-09-15

    We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO{sub 2}) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO{sub 2} films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO{sub 2} films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO{sub 2} films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.

  17. Spin current generation by ultrafast laser pulses in ferromagnetic nickel films

    Science.gov (United States)

    Hurst, Jérôme; Hervieux, Paul-Antoine; Manfredi, Giovanni

    2018-01-01

    A semiclassical phase-space model is used to study the ultrafast charge and spin dynamics in thin ferromagnetic films. Both itinerant and localized magnetism are taken into account. It is shown that an oscillating spin current can be generated in the film via the application of a femtosecond laser pulse in the visible range.

  18. Electron beam curable polymer thick film

    International Nuclear Information System (INIS)

    Nagata, Hidetoshi; Kobayashi, Takashi

    1988-01-01

    Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

  19. Ferromagnetic response of multiferroic TbMnO{sub 3} films mediated by epitaxial strain and chemical pressure

    Energy Technology Data Exchange (ETDEWEB)

    Izquierdo, J.; Morán, O., E-mail: omoranc@unal.edu.co [Universidad Nacional de Colombia, Campus Medellín, Departamento de Física, Laboratorio de Materiales Cerámicos y Vítreos, A.A. 568, Medellín Colombia (Colombia); Astudillo, A.; Bolaños, G. [Low Temperature Laboratory, Department of Physics, University of Cauca, Calle 5 No. 4-70, Popayán (Colombia); Arnache, O. [Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia, Calle 70 No. 52-21, A.A. 1226, Medellín (Colombia)

    2014-05-07

    High quality Tb{sub 1−x}Al{sub x}MnO{sub 3} (x = 0, 0.3) films have been grown under different values of compressive/tensile strain using (001)-oriented SrTiO{sub 3} and MgO substrates. The films were grown by means of rf sputtering at substrate temperature of 800  °C. X-ray diffraction analysis shows that films are single phase, preferentially oriented in the (111) and (122) directions for films deposited on SrTiO{sub 3} and MgO substrates, respectively. Although the TbMnO{sub 3} target shows antiferromagnetic order, the films deposited on both substrates show weak ferromagnetic phase at low temperature coexisting with the antiferromagnetic phase. The introduction of Al in the films clearly enhances their ferromagnetic behavior, improving the magnetic performance of this material. Indeed, M(H) measurements at 5 K show a well-defined hysteresis for films grown on both substrates. However, a stronger magnetic signal (larger values of remanence and coercive field) is observed for films deposited on MgO substrates. The chemical pressure generated by Al doping together with the substrate-induced strain seem to modify the subtle competition between magnetic interactions in the system. It is speculated that such modification could lead to a non-collinear magnetic state that may be tuned by strain modifications. This may be performed by varying the thickness of the films and/or considering other substrate materials.

  20. Topological textures and their bifurcation processes in 2D ferromagnetic thin films

    Science.gov (United States)

    Cao, Jinlü; Yang, Guo-Hong; Jiang, Ying

    2016-10-01

    In this paper, by the use of the topological current theory, the topological structures and the dynamic processes in thin-film ferromagnetic systems are investigated directly from the viewpoint of topology. It is found that the topological charge of a thin-film ferromagnetic system can be changed by annihilation or creation processes of opposite polarized vortex-antivortex pairs taking place at space-time singularities of the normalized magnetization vector field of the system, the variation of the topological charge is integer and can further be expressed in terms of the Hopf indices and Brouwer degrees of the magnetization vector field around the singularities. Moreover, the change of the topological charge of the system is crucial to vortex core reversal processes in ferromagnetic thin films. With the help of the topological current theory and implicit function theorem, the processes of vortex merging, splitting as well as vortex core reversal are discussed in detail.

  1. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  2. Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

    International Nuclear Information System (INIS)

    Lee, Sung Sik; Kim, Young H.

    2005-01-01

    In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

  3. Terahertz Emission of Ferromagnetic Ni-Fe Thin Films Excited by Ultrafast Laser Pulses

    International Nuclear Information System (INIS)

    Shen Jian; Zhang Huai-Wu; Li Yuan-Xun

    2012-01-01

    It is believed that the ultrafast demagnetization process in ferromagnetic film is intrinsically a thermal effect, which is induced by ultrafast laser pulses. We present experimental evidence that such ultrafast demagnetization of the NiFe thin film can radiate electromagnetic waves in the terahertz range. We also demonstrate that the magnitude of the terahertz electromagnetic pulse emitted from ferromagnetic films after pulsed laser excitation can be tuned by the Gilbert damping factor α, which is conventionally used to describe damping of GHz precession motion of magnetization. Different damping factors are obtained by varying the normal metal film adjacent to the magnetic film via spin pumping. The measured radiated electric field in the far field is found to be proportional to the Gilbert damping factor. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

    2015-10-15

    Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

  5. Influence of thickness on properties of plasticized oat starch films

    Directory of Open Access Journals (Sweden)

    Melicia Cintia Galdeano

    2013-08-01

    Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

  6. Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

    2015-07-01

    We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

  7. Anomalously large ferromagnetic resonance linewidth in the Gd/Cr/Fe film plane

    Science.gov (United States)

    Sun, Li; Zhang, Wen; Wong, Ping Kwan Johnny; Yin, Yuli; Jiang, Sheng; Huang, Zhaocong; Zhai, Ya; Yao, Zhongyu; Du, Jun; Sui, Yunxia; Zhai, Hongru

    2018-04-01

    As an important parameter for characterizing the magnetization dynamics, Gilbert damping constant α in a thin film or a multilayer is generally extracted from the linear fitting of the frequency-dependence of the ferromagnetic resonance linewidth, sometimes accompanied with a tiny deviation of the linewidth to a smaller value at the low-frequency or high-frequency region due to the two-magnon scattering with an in-plane-field configuration, in which an in-plane magnetic field H perpendicular to a microwave field h was applied in film plane during measurement. In contrast, here we report, in ultrathin Gd/Cr/Fe multilayers, an anomalously large linewidth in the film plane at the low-frequency region. For the first time, we have successfully extracted the Gilbert damping constant from perfect theoretical fitting to the experimental data, by considering the effective direction of the magnetization around in precession staying out of the film plane when the in-pane H at which the precession starts is below the saturation field. This magnetization deviation from the film plane is found to have an obvious contribution to the enhanced linewidth caused by two magnon scattering, while slightly reduce the intrinsic linewidth. Under the same resonance frequency, the deviation angle reaches the maximum values at tCr = 1.0 nm while decreases when tCr increases to 1.5 nm, which coincides with the trend of the surface perpendicular anisotropy constant K⊥. A reduced intrinsic damping constant α is obtained as the introduction of Gd layer and Cr layer as a result of the competition between the spin pumping effect and the interfacial effects at the Fe/Gd and Fe/Cr interfaces. While the decreasing α for film with Cr layer thickness increasing to 1.5 nm might means the contribution of the electron density of states at the Fermi energy n(EF). This study offers an effective way to accurately obtain the intrinsic damping constant of spintronic materials/devices, which is essential

  8. Ferromagnetic resonance evidence of spinodal decomposition of Ni{sub x} Cu{sub 1} {sub −} {sub x} (0.5 < x < 1) alloy films

    Energy Technology Data Exchange (ETDEWEB)

    Kudryavtsev, Y.V., E-mail: kudr@imp.kiev.ua [Institute of Metal Physics, NAS of Ukraine, Vernadsky 36, 03680 Kyiv-142 (Ukraine); Melnyk, A.K. [Institute for Sorption and Problems of Endoecology, NAS of Ukraine, Naumov 13, Kyiv 03164 (Ukraine); Kravets, A.F. [Institute of Magnetism, NAS of Ukraine, Vernadsky 36-B, 03680 Kyiv-142 (Ukraine); Trachevskyi, V.V. [Technical Centre, NAS of Ukraine, Pokrovska 13, Kyiv 04070 (Ukraine); Korenivski, V. [Nanostructure Physics, Royal Institute of Technology, 10691 Stockholm (Sweden)

    2016-03-31

    Films of diluted ferromagnetic (FM) Ni{sub x} Cu{sub 1} {sub −x} alloys with 0.5 < x < 1 of about 80 nm in thickness were deposited at room temperature on glass–ceramic substrates using electron-beam co-deposition from Cu and Ni sources. The temperature dependence of the ferromagnetic resonance (FMR) spectra was investigated in the 140 < T < 500 K temperature range. The FMR spectra for films of composition 0.75 ≤ x ≤ 0.89 show two absorption peaks, which can be ascribed to a formation of two different FM phases as a result of phase separation in the alloy. The observed unusual temperature dependence of the resonance magnetic fields is interpreted as potentially magnetostrictive in nature. The results are discussed and compared to those for similar Ni–Cu films obtained using magnetron sputtering. - Highlights: • Electron-beam co-deposited Ni–Cu alloy films differ from magnetron co-sputtered ones. • X-ray diffraction shows no sign of structural changes with Ni–Cu film composition. • Ferromagnetic resonance data clearly show phase separation of Ni{sub x} Cu{sub 1−x} alloy films.

  9. Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

    Czech Academy of Sciences Publication Activity Database

    Remeš, Zdeněk; Sun, S. J.; Varga, M.; Chou, H.; Hsu, H.S.; Kromka, A.; Horák, Pavel

    2015-01-01

    Roč. 394, Nov (2015), s. 477-480 ISSN 0304-8853 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk(CZ) LD14011 EU Projects: European Commission(XE) COST Action MP1202 HINT Institutional support: RVO:68378271 ; RVO:61389005 Keywords : diamond * nonmetallic ferromagnetic materials * fine-particle systems * nanocrystalline materials Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.357, year: 2015

  10. NdFeB thick films prepared by tape casting

    International Nuclear Information System (INIS)

    Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

    2003-01-01

    NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

  11. Density functional study of ferromagnetism in alkali metal thin films

    Indian Academy of Sciences (India)

    model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films and bulk hosts are also discussed. Keywords. Alkali metal; thin films; magnetism; density functional ...

  12. Perpendicular Magnetic Anisotropy in Amorphous Ferromagnetic CoSiB/Pd Thin-Film Layered Structures.

    Science.gov (United States)

    Jung, Sol; Yim, Haein

    2015-10-01

    Spin transfer torque (STT) induced switching of magnetization has led to intriguing and practical possibilities for magnetic random access memory (MRAM). This form of memory, called STT-MRAM, is a strong candidate for future memory applications. This application usually requires a large perpendicular magnetic anisotropy (PMA), large coercivity, and low saturation magnetization. Therefore, we propose an amorphous ferromagnetic CoSiB alloy and investigate CoSiB/Pd multilayer thin films, which have a large PMA, large coercivity, and low saturation magnetization. In this research, we propose a remarkable layered structure that could be a candidate for future applications and try to address a few factors that might affect the variation of PMA, coercivity, and saturation magnetization in the CoSiB/Pd multilayers. We investigate the magnetic properties of the CoSiB/Pd multilayers with various thicknesses of the CoSiB layer. The coercivity was obtained with a maximum of 228 Oe and a minimum value of 91 Oe in the [CoSiB 7 Å/Pd 14 Å], and [CoSiB 9 Å/Pd 14 Å], multilayers, respectively. The PMA arises from tCoSiB = 3 Å to tCoSiB = 9 Å and disappears after tCoSiB = 9 Å.

  13. Ferromagnetic behaviour of Fe-doped ZnO nanograined films

    Directory of Open Access Journals (Sweden)

    Boris B. Straumal

    2013-06-01

    Full Text Available The influence of the grain boundary (GB specific area sGB on the appearance of ferromagnetism in Fe-doped ZnO has been analysed. A review of numerous research contributions from the literature on the origin of the ferromagnetic behaviour of Fe-doped ZnO is given. An empirical correlation has been found that the value of the specific grain boundary area sGB is the main factor controlling such behaviour. The Fe-doped ZnO becomes ferromagnetic only if it contains enough GBs, i.e., if sGB is higher than a certain threshold value sth = 5 × 104 m2/m3. It corresponds to the effective grain size of about 40 μm assuming a full, dense material and equiaxial grains. Magnetic properties of ZnO dense nanograined thin films doped with iron (0 to 40 atom % have been investigated. The films were deposited by using the wet chemistry “liquid ceramics” method. The samples demonstrate ferromagnetic behaviour with Js up to 0.10 emu/g (0.025 μB/f.u.ZnO and coercivity Hc ≈ 0.03 T. Saturation magnetisation depends nonmonotonically on the Fe concentration. The dependence on Fe content can be explained by the changes in the structure and contiguity of a ferromagnetic “grain boundary foam” responsible for the magnetic properties of pure and doped ZnO.

  14. Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas; Droubay, Timothy C.; Kovarik, Libor; Nandasiri, Manjula I.; Shutthanandan, Vaithiyalingam; Hu, Dehong; Kim, Bumsoo; Jeon, Seokwoo; Hong, Seungbum; Li, Yulan; Chambers, Scott A.

    2017-06-22

    Polarization-induced weak ferromagnetism has been predicted recently in LiNbO3-type MTiO3 (M = Fe, Mn, Ni). While coexisting ferroelectric polarization and ferromagnetism have been demonstrated in this family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed. Here we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on LiNbO3 substrate utilizing tensile strain, and demonstrate the theory-predicted coupling between its polarization and ferromagnetism by x-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulation using phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials, and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic.

  15. Barium titanate thick films prepared by screen printing technique

    Directory of Open Access Journals (Sweden)

    Mirjana M. Vijatović

    2010-06-01

    Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

  16. Optical methods for thickness measurements on thin metal films.

    Science.gov (United States)

    Pokrowsky, P

    1991-08-01

    The thickness and the dielectric constants of thin metal films on glass substrates are determined by two different methods. The first method is a combination of transmission and ellipsometer measurements (TELL method) and the second is based on attenuated total reflection (ATR method in the Kretschmann arrangement). For comparison, both methods are applied to gold films within a thickness range of 20-80 nm. Furthermore, the TELL method was applied to chromium films of thicknesses up to 150 nm. All experiments are done with a He-Ne laser at 633-nm wavelength.

  17. Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

    Science.gov (United States)

    Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

    2018-04-01

    The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

  18. Coupled Lattice Polarization and Ferromagnetism in Multiferroic NiTiO 3 Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas; Droubay, Timothy C.; Kovarik, Libor; Nandasiri, Manjula I. [Imaging; Shutthanandan, Vaithiyalingam; Hu, Dehong; Kim, Bumsoo [Materials; Department; Jeon, Seokwoo [Department; Hong, Seungbum [Materials; Department; Li, Yulan; Chambers, Scott A.

    2017-06-22

    Polarization-induced weak ferromagnetism (WFM) was demonstrated a few years back in LiNbO3-type compounds, MTiO3 (M = Fe, Mn, Ni). Although the coexistence of ferroelectric polarization and ferromagnetism has been demonstrated in this rare multiferroic family before, first in bulk FeTiO3, then in thin-film NiTiO3, the coupling of the two order parameters has not been confirmed Here, we report the stabilization of polar, ferromagnetic NiTiO3 by oxide epitaxy on a LiNbO3 substrate utilizing tensile strain and demonstrate the theoretically predicted coupling between its polarization and ferromagnetism by X-ray magnetic circular dichroism under applied fields. The experimentally observed direction of ferroic ordering in the film is supported by simulations using the phase-field approach. Our work validates symmetry-based criteria and first-principles calculations of the coexistence of ferroelectricity and WFM in MTiO3 transition metal titanates crystallizing in the LiNbO3 structure. It also demonstrates the applicability of epitaxial strain as a viable alternative to high-pressure crystal growth to stabilize metastable materials and a valuable tuning parameter to simultaneously control two ferroic order parameters to create a multiferroic. Multiferroic NiTiO3 has potential applications in spintronics where ferroic switching is used, such as new four-stage memories and electromagnetic switches.

  19. Effect of pre-heating composites on film thickness

    OpenAIRE

    Goulart, Marcelo; Damin, Deisi Fátima; Melara, Rafael; Conceição, Andréa de Azevedo Brito

    2013-01-01

    Resin composite has been suggested as a luting material for aesthetic indirect restorations and temperature affects material viscosity. Reports of film thickness from new composites are important. The aim of this study was to analyze the influence of pre-heating two resin composites on its film thickness in order to use it as a luting agent for indirect restorations (inlays and onlays). Three materials were divided into 5 groups. Two resin composites, nanofilled (Z350 XT/3MESPE) and microhybr...

  20. Sputtering of Thick Deuterium Films by KeV Electrons

    DEFF Research Database (Denmark)

    Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

    1994-01-01

    Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...... bombardment. The yield enhancement is accompanied by an increasing electron accumulation in the film....

  1. Evidence for high- Tc ferromagnetism in Znx(ZnO)1-x granular films mediated by native point defects

    Science.gov (United States)

    Zhang, X.; Cheng, Y. H.; Li, L. Y.; Liu, Hui; Zuo, X.; Wen, G. H.; Li, L.; Zheng, R. K.; Ringer, S. P.

    2009-11-01

    Znx(ZnO)1-x granular films with nominal atomic concentration of x=0˜1 were prepared by magnetron cosputtering method. Ferromagnetism is observed in films with 0.04≤xmetal/semiconductor heterostructure, the result could be qualitatively explained based on the Stoner theory of band magnetism. These findings may help to get further insight into the ferromagnetic origin in nonmagnetic ion doped ZnO systems.

  2. Critical behavior of ferromagnetic La0.7Sr0.3CoO3 thin films

    International Nuclear Information System (INIS)

    Schwarz, T.

    2007-07-01

    The present thesis concentrates on the critical behavior of ferromagnetic La 0.7 Sr 0.3 CoO 3 thin films (LSCO) close to the magnetic phase transition. The LSCO thin films were prepared by pulsed laser deposition and optimized with respect to their structural and magnetic properties. For the characterization of the structural and magnetic characteristics various methods were used. By means of X-ray diffraction and electron microscopy the crystallinity and microstructure of the epitaxial films were examined, respectively. The analysis of the chemical composition was accomplished by Rutherford backscattering and energy dispersive X-ray diffraction (EDX). Parallel to the investigations of the LSCO films a low-temperature measuring system for electrical measurements in magnetic fields up to 8 T in a temperature range from 1.5 K to 300 K was developed and built up including the necessary control and measuring software. The central point of this work was dedicated to the characterization of the magnetic characteristics of the LSCO films. In comparison, single crystals and polycrystalline bulk samples were also available. At these samples temperature-dependent and isothermal magnetization measurements were accomplished by a SQUID magnetometer. To determine the critical behavior of the samples the critical exponents of the susceptibility and the spontaneous magnetization in the proximity of the ferromagnetic phase transition were determined. For the exact determination of the critical exponents from the experimental data an evaluation routine in Matlab on basis of the Arrott representation method was used. In addition to the investigations of the critical behavior, electrical transportation measurements and neutron reflection measurements with spin-polarized neutrons were performed. The investigations of this work show that, in contrast to the critical behavior of single-crystal LSCO volume samples where a three-dimensional Heisenberg behavior could be observed, the

  3. Field driven ferromagnetic phase nucleation and propagation from the domain boundaries in antiferromagnetically coupled perpendicular anisotropy films

    Energy Technology Data Exchange (ETDEWEB)

    Hauet, Thomas; Gunther, Christian M.; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

    2008-12-09

    We investigate the reversal process in antiferromagnetically coupled [Co/Pt]{sub X-1}/{l_brace}Co/Ru/[Co/Pt]{sub X-1}{r_brace}{sub 16} multilayer films by combining magnetometry and Magnetic soft X-ray Transmission Microscopy (MXTM). After out-of-plane demagnetization, a stable one dimensional ferromagnetic (FM) stripe domain phase (tiger-tail phase) for a thick stack sample (X=7 is obtained), while metastable sharp antiferromagnetic (AF) domain walls are observed in the remanent state for a thinner stack sample (X=6). When applying an external magnetic field the sharp domain walls of the thinner stack sample transform at a certain threshold field into the FM stripe domain wall phase. We present magnetic energy calculations that reveal the underlying energetics driving the overall reversal mechanisms.

  4. Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2015-10-28

    We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

  5. Thickness effect on properties of titanium film deposited by dc ...

    Indian Academy of Sciences (India)

    This paper reports effect of thickness on the properties of titanium (Ti) film deposited on Si/SiO2 (100) substrate using two different methods: d.c. magnetron sputtering and electron beam (e-beam) evaporation technique. The structural and morphological characterization of Ti film were performed using X-ray diffraction (XRD) ...

  6. Characterization and comparison of thermistor thick films. Topical report

    International Nuclear Information System (INIS)

    Gehman, R.W.

    1981-09-01

    Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

  7. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 2,3 branching ratio (BR) of titanium was ...

  8. Screen-printed piezoceramic thick films for miniaturised devices

    DEFF Research Database (Denmark)

    Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

    2007-01-01

    machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer......The development towards smaller devices with more functions integrated calls for new and improved manufacturing processes. The screen-printing process is quite well suited for miniaturised and integrated devices, since thick films can be produced in this manner without the need for further...

  9. Coherent terahertz emission from ferromagnetic films excited by femtosecond laser pulses

    International Nuclear Information System (INIS)

    Beaurepaire, E.; Turner, G.M.; Harrel, S.M.; Beard, M.C.; Bigot, J.-Y.; Schmuttenmaer, C.A.

    2004-01-01

    It is shown that the laser induced ultrafast demagnetization of ferromagnetic films results in the emission of a terahertz electromagnetic pulse. This emission has been detected from Ni films using free-space electro-optic sampling. The radiated electric field E(t) is explained by Maxwell equations (radiation from a time dependent magnetic dipole), and is expected to be proportional to the second time derivative of the magnetization d 2 M/dt 2 , as measured in the far field. This technique opens appealing perspectives in the context of measuring and understanding the ultrafast spin dynamics as well as the interaction of electrons (both charge and spin) with electromagnetic fields

  10. Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

    KAUST Repository

    Benali Kanoun, Mohammed

    2012-05-29

    We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

  11. Localized magnetic excitations for a line of magnetic impurities in a transverse Ising thin film ferromagnet

    International Nuclear Information System (INIS)

    Leite, R.V.; Oliveira Filho, L.O. de; Milton Pereira, J.; Cottam, M.G.; Costa Filho, R.N.

    2009-01-01

    A Green's function method is used to obtain the spectrum of spin excitations associated with a linear array of magnetic impurities implanted in a ferromagnetic thin film. The equations of motion for the Green's functions of the anisotropic film are written in the framework of the Ising model in a transverse field. The frequencies of localized modes are calculated as a function of the interaction parameters for the exchange coupling between impurity-spin pairs, host-spin pairs, and impurity-host neighbors, as well as the effective field parameter at the impurity sites.

  12. One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

    International Nuclear Information System (INIS)

    Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

    2006-01-01

    A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

  13. Triaxial MEMS accelerometer with screen printed PZT thick film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Almind, Ninia Sejersen; Brodersen, Simon Hedegaard

    2010-01-01

    Piezoelectric thick films have increasing interest due to the potential high sensitivity and actuation force for MEMS sensors and actuators. The screen printing technique is a promising deposition technique for realizing piezoelectric thick films in the thickness range from 10-100 mu m....... In this work integration of a screen printed piezoelectric PZT thick film with silicon MEMS technology is shown. A high bandwidth triaxial accelerometer has been designed, fabricated and characterized. The voltage sensitivity is 0.31 mV/g in the vertical direction, 0.062 mV/g in the horizontal direction...... and the first mode resonance frequency is 11 kHz. A Finite Element Method (FEM) model is used to validate the measured sensitivity and resonance frequency. Good agreement between the model and the measurements is seen....

  14. Soft magnetic properties of hybrid ferromagnetic films with CoFe, NiFe, and NiFeCuMo layers

    International Nuclear Information System (INIS)

    Choi, Jong-Gu; Hwang, Do-Guwn; Rhee, Jang-Roh; Lee, Sang-Suk

    2011-01-01

    Two-layered ferromagnetic alloy films (NiFe and CoFe) with intermediate NiFeCuMo soft magnetic layers of different thicknesses were investigated to understand the relationship between coercivity and magnetization process by taking into account the strength of hard-axis saturation field. The thickness dependence of H EC (easy-axis coercivity), H HS (hard-axis saturation field), and χ (susceptibility) of the NiFeCuMo thin films in glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared using the ion beam deposition method was determined. The magnetic properties (H EC , H HS , and χ) of the ferromagnetic CoFe, NiFe three-layers with an intermediate NiFeCuMo super-soft magnetic layer were strongly dependent on the thickness of the NiFeCuMo layer.

  15. Glue Film Thickness Measurements by Spectral Reflectance

    Energy Technology Data Exchange (ETDEWEB)

    B. R. Marshall

    2010-09-20

    Spectral reflectance was used to determine the thickness of thin glue layers in a study of the effect of the glue on radiance and reflectance measurements of shocked-tin substrates attached to lithium fluoride windows. Measurements based on profilometry of the components were found to be inaccurate due to flatness variations and deformation of the tin substrate under pressure during the gluing process. The accuracy of the spectral reflectance measurements were estimated to be ±0.5 μm, which was sufficient to demonstrate a convincing correlation between glue thickness and shock-generated light.

  16. Glue Film Thickness Measurements by Spectral Reflectance

    International Nuclear Information System (INIS)

    Marshall, B.R.

    2010-01-01

    Spectral reflectance was used to determine the thickness of thin glue layers in a study of the effect of the glue on radiance and reflectance measurements of shocked-tin substrates attached to lithium fluoride windows. Measurements based on profilometry of the components were found to be inaccurate due to flatness variations and deformation of the tin substrate under pressure during the gluing process. The accuracy of the spectral reflectance measurements were estimated to be ±0.5 (micro)m, which was sufficient to demonstrate a convincing correlation between glue thickness and shock-generated light.

  17. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India); Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India)], E-mail: rammehra2003@yahoo.com

    2008-12-30

    This paper reports deposition and characterization of Zn{sub 0.94}Co{sub 0.05}Al{sub 0.01}O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  18. Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

    International Nuclear Information System (INIS)

    Sharma, Mamta; Mehra, R.M.

    2008-01-01

    This paper reports deposition and characterization of Zn 0.94 Co 0.05 Al 0.01 O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

  19. One-dimensional in-plane edge domain walls in ultrathin ferromagnetic films

    Science.gov (United States)

    Lund, Ross G.; Muratov, Cyrill B.; Slastikov, Valeriy V.

    2018-03-01

    We study existence and properties of 1D edge domain walls in ultrathin ferromagnetic films with uniaxial in-plane magnetic anisotropy. In these materials, the magnetization vector is constrained to lie entirely in the film plane, with the preferred directions dictated by the magnetocrystalline easy axis. We consider magnetization profiles in the vicinity of a straight film edge oriented at an arbitrary angle with respect to the easy axis. To minimize the micromagnetic energy, these profiles form transition layers in which the magnetization vector rotates away from the direction of the easy axis to align with the film edge. We prove existence of edge domain walls as minimizers of the appropriate 1D micromagnetic energy functional and show that they are classical solutions of the associated Euler–Lagrange equation with a Dirichlet boundary condition at the edge. We also perform a numerical study of these 1D domain walls and uncover further properties of these domain wall profiles.

  20. Discrete modes of a ferromagnetic stripe dipolarly coupled to a ferromagnetic film: a Brillouin light scattering study

    International Nuclear Information System (INIS)

    Gubbiotti, G; Tacchi, S; Carlotti, G; Ono, T; Roussigne, Y; Tiberkevich, V S; Slavin, A N

    2007-01-01

    Spin wave excitations in a magnetic structure consisting of a series of long permalloy stripes of a rectangular cross section magnetized along the stripe length and situated above a continuous permalloy film are studied both experimentally and theoretically. Stripes and continuous film are coupled by dipole-dipole interaction across 10 nm thick Cu spacers. Experimental measurements made using the Brillouin light scattering technique (with the light wavevector oriented along the stripe width) provide evidence for one dispersive spin wave mode associated with the continuous film and several discrete non-dispersive modes resonating within the finite width of the stripes. To interpret the experimental spectra, an analytic theory based on the spin wave formalism for finite-width magnetic stripes has been developed, achieving a good qualitative and partly quantitative description of the experimentally observed spin wave spectrum of the system. In particular, it is explained why the presence of a continuous magnetic film near the magnetic stripe leads to a substantial decrease of the frequencies of the discrete dipolar spin wave modes localized within the stripes. A more quantitative description of the measured frequencies and of the spatial profiles of the spin wave eigenmodes has been obtained by numerical calculations performed using a finite element method

  1. Tuning Magnetic Properties of Soft Ferromagnetic Thin Films for High Frequency Applications

    Science.gov (United States)

    Rementer, Colin Richard

    This work focuses on the design, synthesis, characterization and integration of soft ferromagnetic multilayer structures for their applications in high frequency applications. Presently, the form factor of current telecommunication devices, i.e., antenna, is fundamentally limited by the wavelength it is designed to transmit or receive. In order to adapt to new technologies, a method for subverting this paradigm has been developed by use of magnetoelectric, strain-coupled multiferroic systems, which requires optimized ferroic materials, especially ferromagnetic thin films. Two approaches were considered to achieve this goal, doping (boron) and multilayer (NiFe) heterostructures, where FeGa was selected as the reference phase for both approaches. Doping magnetic materials with boron has been shown to enhance the magnetic softness while maintaining magnetostriction. Multilayer heterostructures offer the possibility of tuning magnetic responses by taking advantage of materials with complementary magnetic properties. Iron-gallium-boron (FeGaB) was synthesized via co-sputtering of Fe 75Ga25 and boron. The addition of boron to Fe75Ga 25 reduced the magnetocrystalline anisotropy energy, enhancing the high frequency properties. Magnetometry studies showed that the coercivity was reduced by 70% with 15% boron (at. %) while maintaining 90% of the magnetization of FeGa. Fixed frequency FMR studies showed that the addition of boron reduced the linewidth by up to 70% to a value of 210 Oe. Electrically poled hysteresis measurements showed that the film has a saturation magnetostriction of 50 microepsilon. FeGaB's properties were shown to be tunable and can be optimized by controlling the boron concentration within 11-15% but this approach did not yield the desired FMR linewidth. Multilayers of sputtered Fe85Ga15/Ni81Fe 19, or FeGa/NiFe, were examined to tailor their magnetic softness, loss at microwave frequencies, permeability, and magnetoelasticity, leveraging the magnetic

  2. Thickness of residual wetting film in liquid-liquid displacement

    Science.gov (United States)

    Beresnev, Igor; Gaul, William; Vigil, R. Dennis

    2011-08-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  3. Measurements of nanoscale domain wall flexing in a ferromagnetic thin film.

    Science.gov (United States)

    Balk, A L; Nowakowski, M E; Wilson, M J; Rench, D W; Schiffer, P; Awschalom, D D; Samarth, N

    2011-08-12

    We use the high spatial sensitivity of the anomalous Hall effect in the ferromagnetic semiconductor Ga(1-x)Mn(x)As, combined with the magneto-optical Kerr effect, to probe the nanoscale elastic flexing behavior of a single magnetic domain wall in a ferromagnetic thin film. Our technique allows position sensitive characterization of the pinning site density, which we estimate to be ∼10(14) cm(-3). Analysis of single site depinning events and their temperature dependence yields estimates of pinning site forces (10 pN range) as well as the thermal deactivation energy. Our data provide evidence for a much higher intrinsic domain wall mobility for flexing than previously observed in optically probed μm scale measurements.

  4. Room-temperature ferromagnetism and in-plane magnetic anisotropy characteristics of nonpolar GaN:Mn films

    International Nuclear Information System (INIS)

    Sun Lili; Yan Fawang; Zhang Huixiao; Wang Junxi; Wang Guohong; Zeng Yiping; Li Jinmin

    2009-01-01

    Diluted magnetic nonpolar GaN:Mn films have been fabricated by implanting Mn ions into nonpolar a-plane (112-bar 0) p-type GaN films and a subsequent rapid thermal annealing process. The ferromagnetism properties of the films were studied by means of superconducting quantum interference device (SQUID). Clearly in-plane magnetic anisotropy characteristics of the sample at 10 K were revealed with the direction of the applied magnetic field rotating along the in-plane [0 0 0 1]-axis. Moreover, obvious ferromagnetic properties of the sample up to 350 K were detected by means of the temperature-dependent SQUID.

  5. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

    Directory of Open Access Journals (Sweden)

    Yiu Wai Lai, Michael Krause, Alan Savan, Sigurd Thienhaus, Nektarios Koukourakis, Martin R Hofmann and Alfred Ludwig

    2011-01-01

    Full Text Available A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  6. MEMS-based thick film PZT vibrational energy harvester

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Thyssen, Anders

    2011-01-01

    We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

  7. Thin dielectric film thickness determination by advanced transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

    2003-09-01

    High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

  8. Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

    Directory of Open Access Journals (Sweden)

    Kawai T.

    2014-07-01

    Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

  9. Electroplated thick-film cobalt platinum permanent magnets

    Energy Technology Data Exchange (ETDEWEB)

    Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

    2016-10-15

    The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

  10. Antenna design for propagating spin wave spectroscopy in ferromagnetic thin films

    Science.gov (United States)

    Zhang, Yan; Yu, Ting; Chen, Ji-lei; Zhang, You-guang; Feng, Jian; Tu, Sa; Yu, Haiming

    2018-03-01

    In this paper, we investigate the characteristics of antenna for propagating-spin-wave-spectroscopy (PSWS) experiment in ferromagnetic thin films. Firstly, we simulate the amplitude and phase distribution of the high-frequency magnetic field around antenna by high frequency structure simulator (HFSS). And then k distribution of the antenna is obtained by fast Fourier transformation (FFT). Furthermore, three kinds of antenna designs, i.e. micro-strip line, coplanar waveguide (CPW), loop, are studied and compared. How the dimension parameter of antenna influence the corresponding high-frequency magnetic field amplitude and k distribution are investigated in details.

  11. Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

    KAUST Repository

    Oba, Tatsuya

    2012-06-19

    We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

  12. Brillouin Light Scattering from Magnetic Excitations in Superparamagnetic and Ferromagnetic Co-Al-O Granular Films

    Science.gov (United States)

    Yoshihara, Akira; Maeda, Toshiteru; Kawamura, Satoshi; Nakamura, Shintaro; Nojima, Tsutomu; Takeda, Yoshihiko; Ohnuma, Shigehiro

    2018-04-01

    A systematic study of Brillouin light scattering (BLS) from superparamagnetic (SPM) and ferromagnetic (FM) Co-Al-O granular films was performed under magnetic fields of up to 4.6 kOe in the standard backscattering geometry at room temperature. The SPM and FM boundary, defined as the Co composition at which the exchange field vanishes, was found to be located at xC(Co) = 59.3 ± 1.3 at. %. From FM films we observed a pair of bulk spin-wave peaks on both the positive- and negative-frequency sides and a surface localized Damon-Eshbach peak only on the positive-frequency side under the present scattering conditions. From SPM films, a pair of broader but propagative excitation peaks with asymmetric intensity were observed on both frequency sides in a spectrum. We performed a numerical analysis of the BLS spectrum by employing the theory developed by Camley and Mills (CM) while retaining dipole and exchange couplings for FM films and only dipole coupling for SPM films. The CM theory successfully reproduced the observed spectrum for both SPM and FM films. The SPM spectrum exhibits a singlet-doublet peak structure similarly to an FM SW spectrum. The SPM peak stems from the dipole-coupled larger-amplitude precession motion of the granule magnetic moment around the external-field-induced magnetization.

  13. A sensitive magnetic field sensor using BPSCCO thick film

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A highly sensitive magnetic sensor operating at liquid nitrogen temperature and based on BPSCCO screen-printed thick film, is reported. The sensor resistance for an applied magnetic field of 100 × 10–4 T. (100 gauss) exhibits an increase by 360% of its value in zero field at 77⋅4 K. The performance of the sensor ...

  14. Shearing Nanometer-Thick Confined Hydrocarbon Films: Friction and Adhesion

    DEFF Research Database (Denmark)

    Sivebæk, I. M.; Persson, B. N. J.

    2016-01-01

    We present molecular dynamics (MD) friction and adhesion calculations for nanometer-thick confined hydrocarbon films with molecular lengths 20, 100 and 1400 carbon atoms. We study the dependency of the frictional shear stress on the confining pressure and sliding speed. We present results...

  15. MEMS Accelerometer with Screen Printed Piezoelectric Thick Film

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lau-Moeller, R.; Bove, T.

    2006-01-01

    A bulk-micromachined piezoelectric MEMS accelerometer with screen printed piezoelectric Pb(ZrxTil )O3(PZT) thick film (TF) as the sensing material has been fabricated and characterized. The accelerometer has a four beam structure with a central seismic mass (3600x3600x500 pm3) and a total chip size...

  16. Imaging and thickness measurement of amorphous intergranular films using TEM

    International Nuclear Information System (INIS)

    MacLaren, I.

    2004-01-01

    Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

  17. Polymer Thick-Film Sensors: Possibilities for Smartcard Biometrics

    NARCIS (Netherlands)

    Henderson, N.J.; Papakostas, T.V.; White, N.M.; Hartel, Pieter H.

    In this paper the potential of polymer thick-film sensors are assessed for use as biometric sensors on smartcards. Piezoelectric and piezoresistive sensors have been printed on flexible polyester, then bonded to smartcard blanks. The tactile interaction of a person with these sensors has been

  18. A sensitive magnetic field sensor using BPSCCO thick film

    Indian Academy of Sciences (India)

    A highly sensitive magnetic sensor operating at liquid nitrogen temperature and based on BPSCCO screen-printed thick film, is reported. The sensor resistance for an applied magnetic field of 100 × 10–4T(100 gauss) exhibits an increase by 360% of its value in zero field at 77.4 K. The performance of the sensor in presence ...

  19. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption ... become a powerful experimental technique to get electronic structural information of elements or .... the Stanford Synchrotron Radiation Laboratory (SSRL). The beamline 8·2 is a bending ...

  20. Film Thickness and Friction Relationship in Grease Lubricated Rough Contacts

    Directory of Open Access Journals (Sweden)

    David Gonçalves

    2017-08-01

    Full Text Available The relationship between the film generation and the coefficient of friction in grease lubricated contacts was investigated. Ball-on-disc tests were performed under different operating conditions: entrainment speed, lubricant temperature and surface roughness. The tests were performed with fully formulated greases and their base oils. The greases were formulated with different thickener types and also different base oils natures and viscosities. Film thickness measurements were performed in ball-on-glass disc tests, and Stribeck curves were measured in ball-on-steel disc tests with discs of different roughness. The role of the thickener and the base oil nature/viscosity on the film thickness and coefficient of friction was addressed and the greases’ performance was compared based on their formulation.

  1. Elaboration of PZT thick films by screen printing

    Science.gov (United States)

    Tajan, V.; Gonnard, Paul; Troccaz, M.

    1996-04-01

    This study concerns the fabrication of a `soft' lead zirconate titanate (PZT) thick films on a Platinum substrate (5 X 15 mm size, 0.25 mm thickness) by the screen printing method. Various parameters connected with the screen printing (rheological characteristic of the ink, firing conditions of the layer) as well as those concerning the active powder used (grain size, grain distribution) are studied. The screen printed specimens characterized from their dielectric properties and their hysteresis loop show a diminution compared to the bulk ceramic, which may be attributed to the less than completely densified films. A study of the displacement versus an a.c. electric field of the piezoelectric film on a platinum substrate is also achieved by a laser doppler vibrometry technique. A comparison with a machined down ceramic pasted on this same Pt substrate is carried out.

  2. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  3. Influence of substrate and film thickness on polymer LIPSS formation

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

    2017-02-01

    Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

  4. Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2012-12-01

    We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

  5. Thickness effect on properties of titanium film deposited by d.c. ...

    Indian Academy of Sciences (India)

    of film thickness (Standard ASTME 92 1986) in order to minimize the effect of substrate on hardness of the film. However, in the present work, the indenter penetration depth was always more than the film thickness. The film hard- ness was separated from the composite hardness of the film- substrate system by the use of an ...

  6. Electrically detected ferromagnetic resonance

    NARCIS (Netherlands)

    Goennenwein, S.T.B.; Schink, S.W.; Brandlmaier, A.; Boger, A.; Opel, M.; Gross, R.; Keizer, R.S.; Klapwijk, T.M.; Gupta, A.; Huebl, H.; Bihler, C.; Brandt, M.S.

    2007-01-01

    We study the magnetoresistance properties of thin ferromagnetic CrO2 and Fe3O4 films under microwave irradiation. Both the sheet resistance ? and the Hall voltage VHall characteristically change when a ferromagnetic resonance (FMR) occurs in the film. The electrically detected ferromagnetic

  7. Chemical vapor deposition reactor. [providing uniform film thickness

    Science.gov (United States)

    Chern, S. S.; Maserjian, J. (Inventor)

    1977-01-01

    An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

  8. Effect of annealing temperature on surface morphology and ultralow ferromagnetic resonance linewidth of yttrium iron garnet thin film grown by rf sputtering

    Science.gov (United States)

    Cao Van, Phuoc; Surabhi, Srivathsava; Dongquoc, Viet; Kuchi, Rambabu; Yoon, Soon-Gil; Jeong, Jong-Ryul

    2018-03-01

    We report high-quality yttrium-iron-garnet (YIG; Y3Fe5O12) ultrathin films grown on {111} gadolinium-gallium-garnet (GGG; Gd3Ga5O12) substrates using RF sputtering deposition on an off-stoichiometric target and optimized thermal treatments. We measured a narrow peak-to-peak ferromagnetic resonance linewidth (ΔH) whose minimum value was 1.9 Oe at 9.43 GHz for a 60-nm-thick YIG film. This value is comparable to the most recently published value for a YIG thin film grown by pulsed laser deposition. The temperature dependence of the ΔH was investigated systematically, the optimal annealing condition for our growing condition was 875 °C. Structural analysis revealed that surface roughness and crystallinity played an important role in the observed ΔH broadening. Furthermore, the thickness dependence of the ΔH, which indicated that 60 nm thickness was optimal to obtain narrow ΔH YIG films, was also investigated. The thickness dependence of ΔH was understood on the basis of contributions of surface-associated magnon scattering and magnetic inhomogeneities to the ΔH broadening. Other techniques such as transmission electron microscopy, scanning electron microscopy, and X-ray diffraction were used to study the crystalline structure of the YIG films. The high quality of the films in terms of their magnetic properties was expressed through a very low coercivity and high saturation magnetization measured using a vibration sample magnetometer.

  9. Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

    Science.gov (United States)

    Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

    2015-04-10

    A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

  10. Advantages of PZT thick film for MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

    2010-01-01

    For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair...... comparison of piezoelectric thin and thick films based MEMS devices, as cantilevers, beams, bridges and membranes. Simple analytical modeling is used to define the new figure of merit. The relevant figure of merits is compared for the piezoelectric material of interest for MEMS applications: ZnO, AIN, PZT....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....

  11. Room-temperature ferromagnetism in Ca and Mg stabilized cubic zirconia bulk samples and thin films prepared by pulsed laser deposition

    Science.gov (United States)

    Dimri, M. Chandra; Khanduri, H.; Kooskora, H.; Kodu, M.; Jaaniso, R.; Heinmaa, I.; Mere, A.; Krustok, J.; Stern, R.

    2012-11-01

    We report room-temperature ferromagnetism in Ca and Mg stabilized zirconia bulk samples and thin films. Powders were prepared by the citrate-combustion route, and thin films grown on silicon substrates by the pulsed laser deposition technique. X-ray diffractograms and Raman spectra at room temperature reveal the formation of cubic phase zirconia. The observed ferromagnetism is robust at room temperature in both bulk as well as in thin film samples, although it is weaker in thin films. The origin of the ferromagnetism can be related to oxygen vacancies created due to divalent (calcium and magnesium) substitution for tetravalent zirconium ions.

  12. Argon ion irradiation induced phase transition and room temperature ferromagnetism in the CuO thin film

    Science.gov (United States)

    Shi, Shoupeng; Gao, Daqiang; Xia, BaoRui; Xue, Desheng

    2016-02-01

    We have deposited a copper oxide (CuO) thin film using a magnetron sputtering system by modulating rate of oxygen flow, and we found that the phase of cuprous oxide (Cu2O) appeared after irradiation by argon ions. Magnetic measurement results indicate that the thin film exhibits room temperature ferromagnetism after irradiation, while the virgin CuO thin film is diamagnetic. Vacancies and interstitial would appear in the lattice during irradiation and phase transition, which will originate in the local magnetic moment. In combination with the analyses of Raman spectra, we believe that the ferromagnetism of the film may originate from Cu vacancies, which provides an approach in investigating the mechanism of magnetism in the diluted magnetic semiconductor.

  13. Room temperature magnetocaloric effect in Ni-Mn-In-Cr ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akkera, Harish Sharma [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India); Singh, Inderdeep [Mechanical and Industrial Engineering Department, Indian Institute of Technology Roorkee, Uttarakhand-24667 (India); Kaur, Davinder, E-mail: dkaurfph@iitr.ernet.in [Functionalnanomaterials Research Lab, Department of Physics, Indian Institute of Technology Roorkee, Uttarakhand-247667 (India)

    2017-02-15

    The influence of Cr substitution for In on the martensitic phase transformation and magnetocaloric effect (MCE) has been investigated in Ni-Mn-Cr-In ferromagnetic shape memory alloy (FSMA) thin films fabricated by magnetron sputtering. Temperature dependent magnetization (M-T) measurements demonstrated that the martensitic transformation temperatures (T{sub M}) monotonously increase with the increase of Cr content due to change in valence electron concentration (e/a) and cell volume. From the study of isothermal magnetization curves (M-H), magnetocaloric effect around the martensitic transformation has been investigated in these FSMA thin films. The magnetic entropy change ∆S{sub M} of 7.0 mJ/cm{sup 3}-K was observed in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film at 302 K in an applied field of 2 T. Further, the refrigerant capacity (RC) was also calculated for all the films in an applied field of 2 T. These findings indicate that the Cr doped Ni-Mn-In FSMA thin films are potential candidates for room temperature micro-length-scale magnetic refrigeration applications. - Highlights: • The Cr content leads to an increase in the martensitic transformation temperature. • The ∆S{sub M} =7 mJ/cm{sup 3}-K at 302 K was observed in the Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5}. • The RC =39.2 mJ/K at 2 T was obtained in Ni{sub 51.1}Mn{sub 34.9}In{sub 9.5}Cr{sub 4.5} film.

  14. Measurement of thick film adhesion by an impact separation technique

    International Nuclear Information System (INIS)

    Snowden, W.E.; Aksay, I.A.

    1981-01-01

    The purpose of this study was to utilize a dynamic loading (impact separation) technique to determine absolute values for the force of adhesion required to separate a substrate/film interface into its two joining components. A principal advantage of the technique is that the force required for adhesive failure is applied directly at the interface by stress waves of relatively low amplitude, not by application of a force to the free surface of the film. Critical impact velocities required for separation of thick films from two types of substrates were measured. Values for force of adhesion were then calculated using a complex finite-difference computer code developed for analysis of a variety of dynamic problems

  15. Self-Assembly of Ferromagnetic Organic–Inorganic Perovskite-Like Films

    NARCIS (Netherlands)

    Akhtar, Naureen; Polyakov, Alexey O.; Aqeel, Aisha; Gordiichuk, Pavlo; Blake, Graeme R.; Baas, Jacobus; Amenitsch, Heinz; Herrmann, Andreas; Rudolf, Petra; Palstra, Thomas T. M.

    2014-01-01

    Perovskite-based organic-inorganic hybrids hold great potential as active layers in electronics or optoelectronics or as components of biosensors. However, many of these applications require thin films grown with good control over structure and thickness-a major challenge that needs to be addressed.

  16. Measurement of high frequency conductivity of oxide-doped anti-ferromagnetic thin film with a near-field scanning microwave microscope

    Directory of Open Access Journals (Sweden)

    Z. Wu

    2014-04-01

    Full Text Available In this manuscript, we describe how the map of high frequency conductivity distribution of an oxide-doped anti-ferromagnetic 200 nm thin film can be obtained from the quality factor (Q measured by a near-field scanning microwave microscope (NSMM. Finite element analysis (FEA is employed to simulate the NSMM tip-sample interaction and obtain a curve related between the simulated quality factor (Q and conductivity. The curve is calibrated by a standard Cu thin film with thickness of 200 nm, together with NSMM measured Q of Ag, Au, Fe, Cr and Ti thin films. The experimental conductivity obtained by the NSMM for IrMn thin films with various doped concentrations of Al2O3 is found consistent with conventional voltammetry measurement in the same tendency. That conductivity decreases as the content of doped Al2O3 increases. The results and images obtained demonstrate that NSMM can be employed in thin film analysis for characterization of local electrical properties of materials in a non-destructive manner and for obtaining a map of conductivity distribution on the same film.

  17. Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

    Science.gov (United States)

    Sun, Yan; Shull, Kenneth; Wang, Jin

    2010-03-01

    The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

  18. Ultrasensitive interplay between ferromagnetism and superconductivity in NbGd composite thin films

    Science.gov (United States)

    Bawa, Ambika; Gupta, Anurag; Singh, Sandeep; Awana, V. P. S.; Sahoo, Sangeeta

    2016-01-01

    A model binary hybrid system composed of a randomly distributed rare-earth ferromagnetic (Gd) part embedded in an s-wave superconducting (Nb) matrix is being manufactured to study the interplay between competing superconducting and ferromagnetic order parameters. The normal metallic to superconducting phase transition appears to be very sensitive to the magnetic counterpart and the modulation of the superconducing properties follow closely to the Abrikosov-Gor’kov (AG) theory of magnetic impurity induced pair breaking mechanism. A critical concentration of Gd is obtained for the studied NbGd based composite films (CFs) above which superconductivity disappears. Besides, a magnetic ordering resembling the paramagnetic Meissner effect (PME) appears in DC magnetization measurements at temperatures close to the superconducting transition temperature. The positive magnetization related to the PME emerges upon doping Nb with Gd. The temperature dependent resistance measurements evolve in a similar fashion with the concentration of Gd as that with an external magnetic field and in both the cases, the transition curves accompany several intermediate features indicating the traces of magnetism originated either from Gd or from the external field. Finally, the signatures of magnetism appear evidently in the magnetization and transport measurements for the CFs with very low (<1 at.%) doping of Gd.

  19. Magnetic Hysteresis in Nanocomposite Films Consisting of a Ferromagnetic AuCo Alloy and Ultrafine Co Particles

    Directory of Open Access Journals (Sweden)

    Federico Chinni

    2017-06-01

    Full Text Available One fundamental requirement in the search for novel magnetic materials is the possibility of predicting and controlling their magnetic anisotropy and hence the overall hysteretic behavior. We have studied the magnetism of Au:Co films (~30 nm thick with concentration ratios of 2:1, 1:1, and 1:2, grown by magnetron sputtering co-deposition on natively oxidized Si substrates. They consist of a AuCo ferromagnetic alloy in which segregated ultrafine Co particles are dispersed (the fractions of Co in the AuCo alloy and of segregated Co increase with decreasing the Au:Co ratio. We have observed an unexpected hysteretic behavior characterized by in-plane anisotropy and crossed branches in the loops measured along the hard magnetization direction. To elucidate this phenomenon, micromagnetic calculations have been performed for a simplified system composed of two exchange-coupled phases: a AuCo matrix surrounding a Co cluster, which represents an aggregate of particles. The hysteretic features are qualitatively well reproduced provided that the two phases have almost orthogonal anisotropy axes. This requirement can be plausibly fulfilled assuming a dominant magnetoelastic character of the anisotropy in both phases. The achieved conclusions expand the fundamental knowledge on nanocomposite magnetic materials, offering general guidelines for tuning the hysteretic properties of future engineered systems.

  20. Abnormal enhancement of ferromagnetism for LaMnO3+δ thin films with decreasing oxygen pressure

    Science.gov (United States)

    Zhang, A. M.; Zhang, W. C.; Wu, X. S.; Lin, J. G.

    2017-05-01

    The compressive LaMnO3+δ thin films with thickness of ˜20 nm are grown on LaAlO3 (001) single crystal substrates under various oxygen environment. With decreasing oxygen pressure, the in-plane compressive strain is enhanced. It is found that the breathing mode (Q1) and the basal plane distortion mode (Q2) of MnO6 octahedron are suppressed, while the octahedral stretching mode (Q3) is promoted. The promoted Q3 switches the orbital order from x2-1/y2-1 to (x2-y2)+(z2-1) type. The ferromagnetic (FM) transition temperature Tc increases from 85 K to 105 K and the low-temperature magnetization increases greatly by 175%. The abnormal enhancement of magnetization with decreasing oxygen pressure is ascribed to the strain enlarged FM domains due to the decreased MnO6 distortion and the switched orbital ordering. This result is advantageous to explain the novel phenomena in LaMnO3-related systems.

  1. Ethanol gas sensing properties of Al2 O3-doped ZnO thick film ...

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  2. Parched elasto hydrodynamic lubrication film thickness measurement in an instrument ball bearing

    Science.gov (United States)

    Kingsbury, E.; Schritz, B.; Prahl, J.

    1988-01-01

    Parched Elasto Hydrodynamic Lubricant (PEHL) film thickness in a large instrument ball bearing is measured by electrical capacitance across its ball set. Correlation is shown between changes in film thickness and changes in Basic Speed Ratio (BSR) measured at the same time. BSR is confirmed as a sensitive, non-intrusive measure of transients in film thickness in a real bearing.

  3. Effect of thickness on magnetic phase coexistence and electrical transport in Nd0.51Sr0.49MnO3 films

    International Nuclear Information System (INIS)

    Prasad, R.; Singh, M.P.; Fournier, P.; Siwach, P.K.; Singh, H.K.; Kaur, A.

    2010-01-01

    We present the impact of the film thickness on the coexistence of various magnetic phases and its link to the magnetoresistance of Nd 0.51 Sr 0.49 MnO 3 thin films. These epitaxial films are deposited on LaAlO 3 (001) substrates by DC magnetron sputtering. Films with thicknesses of approximately 30 nm are found to be under full compressive strain while those with thicknesses ∝100 nm and beyond exhibit the presence of both strained and relaxed phases, as evidenced from X-ray diffraction studies. Both films exhibit multiple magnetic transitions controlled by strong electron correlations and phase coexistence. These films also display insulator-metal transitions (IMT) and colossal magnetoresistance (CMR) under moderate magnetic fields. Among the two set of films, only the 30-nm films show a weak signature of charge ordering at T∼50 K. Even at temperatures much lower than the IMT, the 30-nm films show huge magnetoresistance (MR) ∝80%. This suggests presence of softened charge-ordered insulating (COI) clusters that are transformed into ferromagnetic metallic (FMM) ones by the external magnetic field. In the 100-nm films, the corresponding MR is suppressed to less than 20%. Our study demonstrates that the softening of the COI phase is induced by the combined effect of the in-plane compressive strain and a slight reduction in Sr concentration. (orig.)

  4. Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

    KAUST Repository

    Xing, G. Z.

    2014-05-23

    We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

  5. Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

    Energy Technology Data Exchange (ETDEWEB)

    Silva, E.F. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Gamino, M. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Andrade, A.M.H. de [Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Vázquez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain); Correa, M.A. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Bohn, F., E-mail: felipebohn@fisica.ufrn.br [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

    2017-02-01

    We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

  6. Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

    Science.gov (United States)

    Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

    2018-04-01

    Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

  7. Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

    Science.gov (United States)

    Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

    2017-08-01

    In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

  8. Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

    KAUST Repository

    Roqan, Iman S.

    2015-02-21

    We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

  9. Topological Hall effect in diffusive ferromagnetic thin films with spin-flip scattering

    Science.gov (United States)

    Zhang, Steven S.-L.; Heinonen, Olle

    2018-04-01

    We study the topological Hall (TH) effect in a diffusive ferromagnetic metal thin film by solving a Boltzmann transport equation in the presence of spin-flip scattering. A generalized spin-diffusion equation is derived which contains an additional source term associated with the gradient of the emergent magnetic field that arises from skyrmions. Because of the source term, spin accumulation may build up in the vicinity of the skyrmions. This gives rise to a spin-polarized diffusion current that in general suppresses the bulk TH current. Only when the spin-diffusion length is much smaller than the skyrmion size does the TH resistivity approach the value derived by Bruno et al. [Phys. Rev. Lett. 93, 096806 (2004), 10.1103/PhysRevLett.93.096806]. We derive a general expression of the TH resistivity that applies to thin-film geometries with spin-flip scattering, and show that the corrections to the TH resistivity become large when the size of room temperature skyrmions is further reduced to tens of nanometers.

  10. Suhl instabilities for spin waves in ferromagnetic nanostripes and ultrathin films

    Energy Technology Data Exchange (ETDEWEB)

    Haghshenasfard, Zahra, E-mail: zhaghshe@uwo.ca; Nguyen, Hoa T.; Cottam, Michael G., E-mail: cottam@uwo.ca

    2017-03-15

    A microscopic (or Hamiltonian-based) theory is employed for the spin-wave instability thresholds of nonlinear processes in ultrathin ferromagnetic stripes and films under perpendicular pumping with an intense microwave field. The spatially-quantized linear spin waves in these nanostructures may participate in parametric processes through the three-magnon interactions (the first-order Suhl process) and the four-magnon interactions (the second-order Suhl process) when pumped. By contrast with most previous studies of spin-wave instabilities made for larger samples, where macroscopic (or continuum) theories involving Maxwell's equations for magnetic dipolar effects are used, a discrete lattice of effective spins is employed. Then a dipole-exchange spin Hamiltonian is employed to investigate the behavior of the quantized spin waves under perpendicular pumping, when modifications due to the more extensive spatial confinement and edges effects in these nanostructures become pronounced. The instability thresholds versus applied magnetic field are calculated, with emphasis on the size effects and geometries of the nanostructures and on the different relative strengths of the magnetic dipole-dipole and exchange interactions in materials. Numerical results are presented using parameters for Permalloy, YIG, and EuS. - Highlights: • Suhl instabilities for spin waves in magnetic stripes and films are investigated. • Three- and four-magnon processes in perpendicular pumping are taken into account. • Numerical applications are made to Permalloy, YIG, and EuS.

  11. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    International Nuclear Information System (INIS)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y.; Fourmentel, D.; Destouches, C.; Villard, J.F.

    2015-01-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m -2 .K -1 and 130 μC.N -1 for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in order to

  12. Thick Films acoustic sensors devoted to MTR environment measurements. Thick Films acoustic sensors devoted to Material Testing Reactor environment measurements

    Energy Technology Data Exchange (ETDEWEB)

    Very, F.; Rosenkrantz, E.; Combette, P.; Ferrandis, J.Y. [University Montpellier, IES, UMR 5214, F-34000, Montpellier (France); CNRS, IES, UMR 5214, F-34000, Montpellier (France); Fourmentel, D.; Destouches, C.; Villard, J.F. [CEA, DEN, Instrumentation Sensors and Dosimetry Laboratory, Cadarache, F-13108 St Paul lez Durance (France)

    2015-07-01

    The development of advanced instrumentation for in-pile experiments in Material Testing Reactor constitutes a main goal for the improvement of the nuclear fuel behavior knowledge. An acoustic method for fission gas release detection was tested with success during a first experiment called REMORA 3 in 2010 and 2011, and the results were used to differentiate helium and fission gas release kinetics under transient operating conditions. This experiment was lead at OSIRIS reactor (CEA Saclay, France). The maximal temperature on the sensor during the irradiation was about 150 deg. C. In this paper we present a thick film transducer produce by screen printing process. The screen printing of piezoelectric offers a wide range of possible applications for the development of acoustic sensors and piezoelectric structure for measurements in high temperature environment. We firstly produced a Lead Zirconate Titanate (PZT) based paste composed of Pz27 powder from Ferroperm, CF7575 glass, and organic solvent ESL 400. Likewise a Bismuth Titanate based paste synthesized in our laboratory was produced. With these inks we produced thick film up to 130 μm by screen printing process. Material properties characterizations of these thick-film resonators are essential for device design and applications. The piezoelectric coefficients d33 and pyro-electric P(T) coefficient are investigated. The highest P(T) and d33 are respectively 80 μC.m{sup -2}.K{sup -1} and 130 μC.N{sup -1} for the PZT transducer -which validates the fabrication process-. In view of the development of this transducer oriented for high temperature and irradiation environment, we investigated the electrical properties of the transducers for different ranges of frequencies and temperature - from 20 Hz up to 40 MHz between 30 and 400 deg. C. We highlight the evolution of the impedance response and piezoelectric parameters of screen printed piezoelectric structures on alumina. Shortly an irradiation will be realized in

  13. Preparation and characterization of thick BSCCO 2223 films

    International Nuclear Information System (INIS)

    Ciancio, G; Avila, A; Malachevsky, M.T; Ovidio, C.A

    2002-01-01

    Among the most widespread applications for critical high-temperature ceramic superconductors are for silver veined tapes, with the superconductor in the middle. These tapes are prepared by the powder- in - tube method. To attain high densities of critical current, the ceramic material must have a certain texture, with the grains oriented with the c axis perpendicular to the direction in which the current circulates. In the system that was studied, the degree of orientation increases as the distance to the vein decreases, with the maximum being in the silver-ceramic inter-phase. Superconductor tapes become inconvenient when defining the ceramic, especially because of the orientation of their plates as a function of the distance to the silver. Although the silver can be dissolved by a chemical attack in order to uncover the ceramic, greater precaution is needed while manipulating the superconductor and obtaining representative data. The behavior of thick films of the compound BSCCO 2223, deposited on silver sheets, forming silver-ceramic composites, was studied. These sheets simulate the silver-ceramic inter-phase and the distribution of the grains towards the center in a thick tape. After the samples were prepared, the phases that were present were characterized by x-ray diffraction and the resulting microstructure was analyzed with a SEM (Scanning Electron Microscope). Its mechanical properties were evaluated, following the formation and propagation of cracks in real time using four point flexion microassays inside the SEM chamber, as well as generating tension-deformation curves. The method of preparation of the thick films is discussed and its influence on the results obtained with the different characterizations (cw)

  14. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    This paper presents ethanol vapour sensing properties of WO3 thick films. In this work, the WO3 thick films were prepared by standard screen-printing method. These films were characterized by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM). The ethanol vapour sensing properties of these ...

  15. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    TECS

    Abstract. This paper presents ethanol vapour sensing properties of WO3 thick films. In this work, the WO3 thick films were prepared by standard screen-printing method. These films were characterized by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM). The ethanol vapour sensing pro-.

  16. Anomalous conductivity dependence of plasticized PVC for different modificator "A" concentrations and film thicknesses

    OpenAIRE

    Vlasov, D. V.; Apresyan, L. A.; Vlasov, A. D.; Kryshtob, V. I.

    2011-01-01

    The dependences of electrical conductivity of plasticized PVC films on mass fraction of plasticizer "A" and the film thickness are experimentally investigated. Non-monotonic dependence of conductivity on the concentration of plasticizer and strongly nonlinear dependence of the resistance of the film on its thickness are found. Possibility of construction of the models describing received results is shown and also discussed.

  17. Ethanol vapour sensing properties of screen printed WO3 thick films

    Indian Academy of Sciences (India)

    TECS

    have been used to develop varistors, sensors and actua- tors (Prudenziati 1994). The thick film gas sensors based ... sively studied gases in the thick film gas sensors. The detection of ethanol vapour based on thin film of SnO2. (Mishra et ... The organic vehicles such as butyl carbitol acetate (BCA) and ethyl cellulose were.

  18. Effect of preheating on the film thickness of contemporary composite restorative materials

    Directory of Open Access Journals (Sweden)

    Dimitrios Dionysopoulos

    2014-12-01

    Conclusion: The film thickness of the composites tested is material dependent. The thickness of the preheated conventional composites is significantly lower than those at room temperature. The conventional composites provide film thickness values greater than those of the flowable composites regardless of preheating temperature.

  19. Slow wave structures integrated with ferromagnetic and ferro-electric thin films for smart RF applications

    Science.gov (United States)

    Rahman, B. M. Farid

    Modern communications systems are following a common trend to increase the operational frequency, level of integration and number of frequency bands. Although 90-95% components in a cell phone are passives which take 80% of the total board area. High performance RF passive components play limited role and are desired towards this technological advancement. Slow wave structure is one of the most promising candidates to design compact RF and mm-Wave passive components. Slow wave structures are the specially designed transmission line realized by placing the alternate narrow and wide signal conductors in order to reduce the physical size of the components. This dissertation reports multiband slow wave structures integrated with ferromagnetic and ferroelectric thin films and their RF applications. A comparative study on different types of coplanar wave-guide (CPW) slow wave structures (SWS) has been demonstrated for the first time. Slow wave structures with various shapes have been investigated and optimized with various signal conductor shapes, ground conductor shapes and pitch of the sections. Novel techniques i.e. the use of the defected ground structure and the different signal conductor length has been implemented to achieve higher slow wave effect with minimum loss. The measured results have shown the reduction of size over 43.47% and 37.54% in the expense of only 0.27dB and 0.102dB insertion loss respectively which can reduce the area of a designed branch line coupler by 68% and 61% accordingly. Permalloy (Py) is patterned on top of the developed SWS for the first time to further increase the slow wave effect and provide tunable inductance value. High frequency applications of Py are limited by its ferro-magnetic resonance frequency since the inductance value decreases beyond that. Sub-micrometer patterning of Py has increased FMR frequency until 6.3GHz and 3.2GHz by introducing the shape anisotropy. For the SWS with patterned Py, the size of the quarter

  20. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    International Nuclear Information System (INIS)

    Zsurzsa, S.; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H c ) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H c =H co +a/d n with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H c ) and magnetoresistance. • H c depends on Co layer thickness according to H c =H co +a/d n with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  1. Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

    2017-01-01

    The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

  2. Polarization fatigue of BiFeO3 films with ferromagnetic metallic electrodes

    Directory of Open Access Journals (Sweden)

    Chen Chen

    2017-05-01

    Full Text Available BiFeO3 (BFO thin films were epitaxially grown on (001 SrTiO3 substrates using LaNiO3 as bottom electrode by pulsed laser deposition. The ferroelectric properties of BFO layer with ferromagnetic Ni21Fe79 (NiFe or non-magnetic Pt electrode are investigated. Well saturated polarization-electric field (P-E hysteresis loops are observed. Significant fatigue and associated drastic decrease in switchable polarization have been observed with cycling number exceeds 106, which can be explained by the domain wall pinning due to the oxygen vacancies trapping. With increasing cycle number to above 107, the polarization is rejuvenated. The polarization for BFO layer with NiFe electrode recovers to the initial value, while only about 75% of initial polarization is recovered for BFO layer with Pt electrode. Furthermore, the imprint is alleviated and the P-E hysteresis loops become more symmetric after the polarization recovery. The difference can be understood by the different interface state of NiFe/BFO and Pt/BFO.

  3. Magnetic Probe Construction using Thick-film Technology

    International Nuclear Information System (INIS)

    Takahashi, H.; Sakakibara, S.; Kubota, Y.; Yamada, H.

    2001-01-01

    Thick-film technology has been successfully adapted for the design and fabrication of magnetic probes of a new type suitable for use in the simultaneous ultra-high vacuum and high-temperature environment of a nuclear fusion device. The maximum usable temperature is expected to be around 900 degrees C. This new probe has a specific sensitivity (coupling area per unit volume) an order of magnitude higher than a conventional coil. The new probe in one implementation is capable of simultaneously measuring magnetic field in three orthogonal directions about a single spatial point and in two frequency ranges. Low-frequency coils have a measured coupling area of 296-323 cm squared and a frequency response of about 300 kHz. High-frequency coils have a design coupling area of 12-15 cm squared

  4. LTCC Phase Shifters Based on Tunable Ferroelectric Composite Thick Films

    Science.gov (United States)

    Nikfalazar, M.; Kohler, C.; Heunisch, A.; Wiens, A.; Zheng, Y.; Schulz, B.; Mikolajek, M.; Sohrabi, M.; Rabe, T.; Binder, J. R.; Jakoby, R.

    2015-11-01

    This paper presents, the investigation of tunable components based on LTCC technology, implementing ferroelectric tunable thick-film dielectric. The tunable loaded line phase shifters are fabricated with metal-insulator-metal (MIM) varactors to demonstrate the capabilities of this method for packaging of the tunable components. The MIM varactors consist of one tunable dielectric paste layer that is printed between two silver layers. The tunable ferroelectric paste is optimized for LTCC sintering temperature around 850°C. The phase shifters are fabricated in two different process. They were achieved a figure of merit of 24°/dB (phase shift 192°) at 3 GHz and 18°/dB (phase shift 98°) at 4.4 GHz by using seven unit cells that each unit cell consisting of two MIM varactors.

  5. Overlay mark optimization for thick-film resist overlay metrology

    Energy Technology Data Exchange (ETDEWEB)

    Zhu Liang [Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Li Jie; Zhou Congshu; Gu Yili; Yang Huayue, E-mail: liang.zhu@gracesemi.co [Grace Semiconductor Manufacturing Corporation, Shanghai 201203 (China)

    2009-06-01

    For thick resist implant layers, such as a high voltage P well and a deep N well, systematic and uncorrectable overlay residues brought about by the tapered resist profiles were found. It was found that the tapered profile is closely related to the pattern density. Potential solutions of the manufacturing problem include hardening the film solidness or balancing the exposure density. In this paper, instead of focusing on the process change methodology, we intend to solve the issue of the overlay metrology error from the perspective of the overlay mark design. Based on the comparison of the overlay performances between the proposed overlay mark and the original design, it is shown that the optimized overlay mark target achieves better performance in terms of profiles, dynamic precision, tool induced shift (TIS), and residues. Furthermore, five types of overlay marks with dummy bars are studied, and a recommendation for the overlay marks is given.

  6. Vortex kinks in superconducting films with periodically modulated thickness

    International Nuclear Information System (INIS)

    Facio, Jorge I; Abate, Anabella; Guimpel, J; Cornaglia, Pablo S

    2013-01-01

    We report magnetoresistance measurements in Nb films having a periodic thickness modulation. The cylinder shaped thicker regions of the sample, which form a square lattice, act as repulsive centers for the superconducting vortices. For low driving currents along one of the axes of the square lattice, the resistivity ρ increases monotonously with increasing magnetic field B and the ρ–B characteristics are approximately piecewise linear. The linear ρ versus B segments change their slope at matching fields where the number of vortices is an integer or a half integer times the number of protruding cylinders in the sample. Numerical simulations allow us to associate the different segments of linear magnetoresistance to different vortex-flow regimes, some of which are dominated by the propagation of discommensurations (kinks). (paper)

  7. Charge transport in films of Geobacter sulfurreducens on graphite electrodes as a function of film thickness

    KAUST Repository

    Jana, Partha Sarathi

    2014-01-01

    Harnessing, and understanding the mechanisms of growth and activity of, biofilms of electroactive bacteria (EAB) on solid electrodes is of increasing interest, for application to microbial fuel and electrolysis cells. Microbial electrochemical cell technology can be used to generate electricity, or higher value chemicals, from organic waste. The capability of biofilms of electroactive bacteria to transfer electrons to solid anodes is a key feature of this emerging technology, yet the electron transfer mechanism is not fully characterized as yet. Acetate oxidation current generated from biofilms of an EAB, Geobacter sulfurreducens, on graphite electrodes as a function of time does not correlate with film thickness. Values of film thickness, and the number and local concentration of electrically connected redox sites within Geobacter sulfurreducens biofilms as well as a charge transport diffusion co-efficient for the biofilm can be estimated from non-turnover voltammetry. The thicker biofilms, of 50 ± 9 μm, display higher charge transport diffusion co-efficient than that in thinner films, as increased film porosity of these films improves ion transport, required to maintain electro-neutrality upon electrolysis. This journal is © the Partner Organisations 2014.

  8. Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin-film system

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, T K [Faculty of Science, Gakushuin University, 171-8588 Mejiro, Tokyo (Japan); MartInez, E [Fachbereich Physik, Universitaet Osnabrueck, D-49069 Osnabrueck (Germany); Vega, A [Departamento de Fisica Teorica, Atomica y Optica, Universidad de Valladolid, 47011 Valladolid (Spain); Robles, R [Department of Physics, Uppsala University, SE-75121 (Sweden); Stoeffler, D [Institut de Physique et Chimie des Materiaux de Strasbourg (UMR C7504 CNRS-ULP), Strasbourg (France); Parga, A L Vazquez de [Departamento de Fisica de la Materia Condensada, Universidad Autonoma de Madrid, Cantoblanco 28049, Madrid (Spain); Mizoguchi, T [Faculty of Science, Gakushuin University, 171-8588 Mejiro, Tokyo (Japan); Kempen, H van [Institute for Molecules and Materials, Radboud University, Toernooiveld 1, 6525 ED Nijmegen (Netherlands)

    2007-06-13

    We have studied the magnetic configuration in ultrathin antiferromagnetic Mn films grown around monoatomic steps on an Fe(001) surface by spin-polarized scanning tunnelling microscopy/spectroscopy and ab initio-parameterized self-consistent real-space tight-binding calculations in which the spin quantization axis is independent for each site, thus allowing noncollinear magnetism. Mn grown on Fe(001) presents a layered antiferromagnetic structure. In the regions where the Mn films overgrows Fe steps the magnetization of the surface layer is reversed across the steps. Around these defects a frustration of the antiferromagnetic order occurs. Due to the weakened magnetic coupling at the central Mn layers, the amount of frustration is smaller than in Cr, and the width of the wall induced by the step does not change with the thickness, at least for coverages up to seven monolayers.

  9. Elastohydrodynamic film thickness formula based on X-ray measurements with a synthetic paraffinic oil

    Science.gov (United States)

    Loewenthal, S. H.; Parker, R. J.; Zaretsky, E. V.

    1973-01-01

    An empirical elastohydrodynamic film thickness formula for heavily loaded contacts based upon X-ray film thickness measurements made with a synthetic paraffinic oil is presented. The deduced relation was found to adequately reflect the high load dependence exhibited by the measured minimum film thickness data at high Hertizian contact stresses, that is, above 1.04 x 10 to the ninth N/sq m (150,000 psi). Comparisons were made with the numerical results from a theoretical isothermal film thickness formula. The effects of changes in contact geometry, material, and lubricant properties on the form of the empirical model are also discussed.

  10. Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO{sub 2} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G., E-mail: gravicrc@gmail.com

    2016-12-30

    Highlights: • Ni-CeO{sub 2} thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO{sub 2} thin films. • XPS spectra confirmed Ni ions were present in the doped CeO{sub 2} thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO{sub 2} films were confirmed through VSM. - Abstract: Ni-doped CeO{sub 2} thin films were prepared under Ar{sup +} atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO{sub 2} films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO{sub 2} cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO{sub 2}. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO{sub 2}. XPS results confirm the presence of Ni{sub 2p}, O{sub 1s} and Ce and depict that cerium is present as both Ce{sup 4+} and Ce{sup 3+} oxidation states in Ce{sub 1−x}Ni{sub x}O{sub 2} (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO{sub 2}, while a ferromagnetic behavior appeared when Ni is doped in CeO{sub 2} films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size

  11. A new attempt of measurement film thickness by x-ray diffractometry

    International Nuclear Information System (INIS)

    Kosaka, Masao; Kobayashi, Hideo

    1987-01-01

    In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

  12. A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

    International Nuclear Information System (INIS)

    Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

    2014-01-01

    Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

  13. Ferromagnetism of magnetically doped topological insulators in CrxBi2-xTe3 thin films

    Science.gov (United States)

    Ni, Y.; Zhang, Z.; Nlebedim, I. C.; Hadimani, R. L.; Tuttle, G.; Jiles, D. C.

    2015-05-01

    We investigated the effect of magnetic doping on magnetic and transport properties of Bi2Te3 thin films. CrxBi2-xTe3 thin films with x = 0.03, 0.14, and 0.29 were grown epitaxially on mica substrate with low surface roughness (˜0.4 nm). It is found that Cr is an electron acceptor in Bi2Te3 and increases the magnetization of CrxBi2-xTe3. When x = 0.14 and 0.29, ferromagnetism appears in CrxBi2-xTe3 thin films, where anomalous Hall effect and weak localization of magnetoconductance were observed. The Curie temperature, coercivity, and remnant Hall resistance of thin films increase with increasing Cr concentration. The Arrott-Noakes plot demonstrates that the critical mechanism of the ferromagnetism can be described better with 3D-Heisenberg model than with mean field model. Our work may benefit for the practical applications of magnetic topological insulators in spintronics and magnetoelectric devices.

  14. Evidence of Room Temperature Ferromagnetism Due to Oxygen Vacancies in (In1- x Fe x )2O3 Thin Films

    Science.gov (United States)

    Chakraborty, Deepannita; Munuswamy, Kuppan; Shaik, Kaleemulla; Nasina, Madhusudhana Rao; Dugasani, Sreekantha Reddy; Inturu, Omkaram

    2018-03-01

    Iron substituted indium oxide (In1- x Fe x )2O3 thin films at x = 0.00, 0.03, 0.05 and 0.07 were coated onto Corning 7059 glass substrates using the electron beam evaporation technique followed by annealing at different temperatures. The prepared thin films were subjected to different characterization techniques to study their structural, optical and magnetic properties. The structural properties of the thin films were studied using x-ray diffractometry (XRD). From the XRD results it was found that the films were crystallized in cubic structure, and no change in crystal structure was observed with annealing temperature. No secondary phases related to iron were observed from the XRD profiles. The chemical composition and surface morphology of the films were examined by field emission scanning electron microscope (FE-SEM) attached with energy dispersive analysis of x-ray (EDAX). The valence state of the elements were studied by x-ray photoelectron spectroscopy (XPS) and found that the indium, iron and oxygen were in In+3, Fe+3 and O-2 states. From the data, the band gap of the (In1- x Fe x )2O3 thin films were calculated and it increased with increase of annealing temperature. The magnetic properties of the films were studied at room temperature by vibrating sample magnetometer (VSM). The films exhibited ferromagnetism at room temperature.

  15. Thickness dependence and dimensionality effects on charge and magnetic orderings in La1 /3Sr2 /3FeO3 thin films

    Science.gov (United States)

    Yamamoto, K.; Hirata, Y.; Horio, M.; Yokoyama, Y.; Takubo, K.; Minohara, M.; Kumigashira, H.; Yamasaki, Y.; Nakao, H.; Murakami, Y.; Fujimori, A.; Wadati, H.

    2018-02-01

    We investigate the thickness effects on charge and magnetic orderings in Fe perovskite oxide La1 /3Sr2 /3FeO3 /SrTiO3 thin films by hard x-ray and resonant soft x-ray scattering (RSXS) with changing thin-film thickness systematically. We found that the correlation lengths of the magnetic ordering along the in-plane and out-of-plane directions are comparable and proportional to the thickness, and show stronger thickness dependence than those of charge ordering. The magnetic ordered states disappear when the correlation length of magnetic ordering decreases to that of charge ordering through the intrinsic thickness effects. Surface-sensitive grazing-incident RSXS revealed that the orderings exist even in the surface region, which indicates that the observed orderings are not affected by surface effects like oxygen vacancies. Critical thickness is in 5-15 nm, which corresponds to 4-11 antiferromagnetic ordering period. This critical value seems to be common to other ferromagnetic oxide thin films.

  16. High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

    DEFF Research Database (Denmark)

    Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

    2010-01-01

    , devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

  17. Influence of the processing parameters of slurries for the deposit of nickelate thick films

    International Nuclear Information System (INIS)

    Castillo, S.; Cienfuegos, R.F.; Fontaine, M.L.; Lenormand, P.; Bacchin, P.; Ansart, F.

    2007-01-01

    Thick films cathodes for Solid Oxide Fuel Cells (SOFC) are prepared by dip-coating slurries made of several lanthanum nickelate oxide powders onto yttria stabilized zirconia (YSZ) substrates. The processing parameters for the slurries preparation and the multilayers coating have been optimized to obtain homogeneous, crack-free, thick and adherent films after heat treatment

  18. The effect of bubble acceleration on the liquid film thickness in micro tubes

    Energy Technology Data Exchange (ETDEWEB)

    Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2010-08-15

    Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

  19. Investigation of Top/Bottom electrode and Diffusion Barrier Layer for PZT Thick Film MEMS Sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Thomsen, Erik Vilain

    2008-01-01

    Top and bottom electrodes for screen printed piezoelectric lead zirconate titanate, Pb(ZrxTi1 - x)O3 (PZT) thick film are investigated with respect to future MEMS devices. Down to 100 nm thick E-beam evaporated Al and Pt films are patterned as top electrodes on the PZT using a lift-off process...

  20. Existence of thickness threshold for crystal growth rate of ascorbic acid from its thin solution film

    Science.gov (United States)

    Yamazaki, Yoshihiro; Yoshino, Hiroki; Kikuchi, Mitsunobu; Kashiwase, Sakiko

    2017-06-01

    Growth rate of ascorbic acid crystal domains from its aqueous solution film depends on the film thickness. Existence of a thickness threshold is experimentally confirmed below which growth rate becomes quite low and is considered to almost stop. This threshold is one of the essential factors for the dynamical transition between uniform and rhythmic growth modes.

  1. Ethanol vapour sensing properties of screen printed WO 3 thick films

    Indian Academy of Sciences (India)

    The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

  2. Effect of microstructure and rheology on the grease EHL film thickness at medium speeds

    NARCIS (Netherlands)

    Cyriac, F.; Lugt, P. M.; Bosman, R.; Padberg, C. J.; Venner, C. H.

    2016-01-01

    In this study the parameters influencing the film thickness of six greases in a rolling elastohydrodynamically lubricated contact under fully flooded conditions are analyzed. The grease film thickness was found to be higher than their corresponding bled oil suggesting the presence of thickener in

  3. State of the art in thin film thickness and deposition rate monitoring sensors

    International Nuclear Information System (INIS)

    Buzea, Cristina; Robbie, Kevin

    2005-01-01

    In situ monitoring parameters are indispensable for thin film fabrication. Among them, thickness and deposition rate control are often the most important in achieving the reproducibility necessary for technological exploitation of physical phenomena dependent on film microstructure. This review describes the types of thickness and deposition rate sensors and their theoretical and phenomenological background, underlining their performances, as well as advantages and disadvantages

  4. Room temperature ferromagnetic and ferroelectric properties of Bi1−xCaxMnO3 thin films

    Directory of Open Access Journals (Sweden)

    K. S. Pugazhvadivu

    2014-11-01

    Full Text Available Bi1−xCaxMnO3 (BCMO thin films with x = 0, 0.1, 0.2, 0.3 and 0.4 are successfully deposited on the n-type Si (100 substrate at two different temperatures of 400 °C and 800 °C using RF magnetron sputtering. The stoichiometry of the films and oxidation state of the elements have been described by X-ray photoelectron spectroscopy analysis. Dielectric measurement depicts the insulating property of BCMO films. Magnetic and ferroelectric studies confirm the significant enhancement in spin orientation as well as electric polarization at room temperature due to incorporation of Ca2+ ions into BiMnO3 films. The BCMO (x = 0.2 film grown at 400 °C shows better magnetization (Msat and polarization (Pswith the measured values of 869 emu / cc and 6.6 μC/ cm2 respectively than the values of the other prepared films. Thus the realization of room temperature ferromagnetic and ferroelectric ordering in Ca2+ ions substituted BMO films makes potentially interesting for spintronic device applications.

  5. Enhanced piezoelectric performance of composite sol-gel thick films evaluated using piezoresponse force microscopy

    Science.gov (United States)

    Liu, Yuanming; Lam, Kwok Ho; Kirk Shung, K.; Li, Jiangyu; Zhou, Qifa

    2013-01-01

    Conventional composite sol-gel method has been modified to enhance the piezoelectric performance of ceramic thick films. Lead zirconate titanate (PZT) and lead magnesium niobate–lead titanate (PMN-PT) thick films were fabricated using the modified sol-gel method for ultrasonic transducer applications. In this work, piezoresponse force microscopy was employed to evaluate the piezoelectric characteristics of PZT and PMN-PT composite sol-gel thick films. The images of the piezoelectric response and the strain-electric field hysteresis loop behavior were measured. The effective piezoelectric coefficient (d33,eff) of the films was determined from the measured loop data. It was found that the effective local piezoelectric coefficient of both PZT and PMN-PT composite films is comparable to that of their bulk ceramics. The promising results suggest that the modified composite sol-gel method is a promising way to prepare the high-quality, crack-free ceramic thick films. PMID:23798771

  6. Measurement of central corneal thickness and pre-corneal tear film thickness of rabbits using the Scheimpflug system

    Directory of Open Access Journals (Sweden)

    Jing Dong

    2013-10-01

    Full Text Available AIM:To measure central corneal thickness (CCT and pre-corneal tear film thickness using the Galilei dual-Scheimpflug analyzer (GSA in New Zealand white rabbits.METHODS:Ten normal New Zealand white rabbits (20 eyes were included in this study. With the assistance of 0.1% fluorescein, the pre-corneal tear film can be well visualized. Both eyes of each rabbit were scanned once with the GSA pre- and post-instillation of 1μL 0.1% fluorescein. The difference between the two measurements of CCT (4-mm diameter was recorded as the pachymetric values of the central tear film.RESULTS:The CCT of pre- and post-instillation was 388.8±9.5μm and 407.0±10.5μm, respectively. After a paired t-test analysis, the central pre-corneal tear film thickness of 4mm diameter was 18.2±5.31μm with a 95% confidence interval of (15.7, 20.6μm (PCONCLUSION:GSA can be used to measure CCT and analyze central tear film thickness of rabbits with the help of fluorescein.

  7. Room temperature ferromagnetism and ferroelectricity in strained multiferroic BiFeO3 thin films on La0.7Sr0.3MnO3/SiO2/Si substrates

    International Nuclear Information System (INIS)

    Ramírez-Camacho, M.C.; Sánchez-Valdés, C.F.; Gervacio-Arciniega, J.J.; Font, R.; Ostos, C.; Bueno-Baques, D.; Curiel, M.; Sánchez-Llamazares, J.L.

    2017-01-01

    A novel ferromagnetic state coexisting with ferroelectric ordering at room temperature in strained BiFeO 3 (BFO) thin films grown using a sputtering technique on La 0.7 Sr 0.3 MnO 3 /SiO 2 /Si(100) (LSMO/SOS) substrates is reported. The properties of BFO films with different thicknesses (t BFO  = 15, 50, 70, 120, and 140 nm) on 40 nm LSMO layers are explored. [012] out-of-plane highly textured BFO/LSMO stacks grew with rhombohedral structures. LSMO layers are nanostructured in nature, constituted by ferromagnetic single-domain nanoregions induced by the constrain of the SiO 2 surface, with T C ∼200 K and high coercive field (H C ) of ∼1100 Oe at 2.5 K. BFO films grew epitaxially nanostructured on LSMO, exhibiting ∼4 nm spherical nanoregions. The BFO layers show typical antiferromagnetic behavior (in a greater volume fraction) when made thicker (t BFO  > 70 nm). The thinner films (t BFO  < 50 nm) display ferromagnetic behavior with T C  > 400 K, H C  ∼ 1600 Oe for 15 nm and ∼1830 Oe for 50 nm. We propose that such ferromagnetic behavior is originated by the establishment of a new magnetic configuration in the Fe 3+ −O−Fe 3+ sublattice of the BFO structure, induced by strong hybridization at the interface as consequence of superexchange coupling interactions with the ferromagnetic Mn 3+ −O−Mn 3+ /Mn 4+ sublattice of LSMO. All BFO layers show excellent ferroelectric and piezoelectric properties (coercive field ∼ 740 kV/cm, and d 33  = 23 p.m./V for 50 nm; ∼200 kV/cm and 55 p.m./V for 140 nm), exhibiting 180° and 109° DWs structures depending on the thickness. Such multiferroic properties predict the potential realization of new magneto-electronic devices integrated with Si technology.

  8. The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

    Science.gov (United States)

    Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

    2018-05-01

    We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

  9. Effect of Firing Temperature on Humidity Sensing Properties of SnO2 Thick Film Resistor

    Directory of Open Access Journals (Sweden)

    R. Y. Borse

    2009-12-01

    Full Text Available Thick films of SnO2 were prepared using standard screen printing technique. The films were dried and fired at different temperatures. Tin-oxide is an n-type wide band gap semiconductor, whose resistance is described as a function of relative humidity. An increasing firing temperature on SnO2 film increases the sensitivity to humidity. The parameters such as sensitivity, response times and hysteresis of the SnO2 film sensors have been evaluated. The thick films were characterized by XRD, SEM and EDAX and grain size, composition of elements, relative phases are obtained.

  10. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    International Nuclear Information System (INIS)

    Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

    2012-01-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  11. Effect of thickness and temperature of copper phthalocyanine films on their properties

    Directory of Open Access Journals (Sweden)

    Alieva Kh. S.

    2012-06-01

    Full Text Available The research has shown that copper phthalocyanine films, having a set of unique properties, can be successfully used as gas-sensitive coating of resistive structures. The thickness of the film, in contrast to its temperature, is not the determining factor for high sensitivity. Low operating temperature of structures with copper phthalocyanine films allows to exploit them in economy mode.

  12. Effects of Loading Frequency and Film Thickness on the Mechanical Behavior of Nanoscale TiN Film

    Science.gov (United States)

    Liu, Jin-na; Xu, Bin-shi; Wang, Hai-dou; Cui, Xiu-fang; Jin, Guo; Xing, Zhi-guo

    2017-09-01

    The mechanical properties of a nanoscale-thickness film material determine its reliability and service life. To achieve quantitative detection of film material mechanical performance based on nanoscale mechanical testing methods and to explore the influence of loading frequency of the cycle load on the fatigue test, a TiN film was prepared on monocrystalline silicon by magnetron sputtering. The microstructure of the nanoscale-thickness film material was characterized by using scanning electron microscopy and high-resolution transmission electron microscopy. The residual stress distribution of the thin film was obtained by using an electronic film stress tester. The hardness values and the fatigue behavior were measured by using a nanomechanical tester. Combined with finite element simulation, the paper analyzed the influence of the film thickness and loading frequency on the deformation, as well as the equivalent stress and strain. The results showed that the TiN film was a typical face-centered cubic structure with a large amount of amorphous. The residual compressive stress decreased gradually with increasing thin film thickness, and the influence of the substrate on the elastic modulus and hardness was also reduced. A greater load frequency would accelerate the dynamic fatigue damage that occurs in TiN films.

  13. Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

    International Nuclear Information System (INIS)

    Srivastava, R.P.; De Wagter, C.

    2012-01-01

    The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

  14. Noise properties of Pb/Cd-free thick film resistors

    International Nuclear Information System (INIS)

    Stadler, Adam Witold; Kolek, Andrzej; Zawislak, Zbigniew; Mleczko, Krzysztof; Jakubowska, Malgorzata; Kielbasinski, Konrad Rafal; Mlozniak, Anna

    2010-01-01

    Low-frequency noise spectroscopy has been used to examine noise properties of Pb/Cd-free RuO 2 - and CaRuO 3 -based thick films screen printed on alumina substrates. Experiments were performed in the temperature range 77-300 K and the frequency range 0.5-5000 Hz with multiterminal devices. The measured noise has been recognized as resistance noise that consists of background 1/f noise and components generated by several thermally activated noise sources (TANSs) of different activation energies. The total noise has been composed of the contributions generated in the resistive layer and in the resistive/conductive layers interface. These noise sources are non-uniformly distributed in the resistor volume. Noise intensity of new-resistive layers has been described by the noise parameter C bulk . Pb/Cd-free layers turned out to be noisier than their Pb-containing counterparts; however, the removal of Pb and Cd from resistive composition is hardly responsible for the increase in the noise. In the case of RuO 2 layers noise increases most likely due to larger grain size of RuO 2 powder used to prepare resistive pastes. Information on the quality of the resistive-to-conductive layers interface occurred to be stored in the values of noise parameter C int . Pb/Cd-free RuO 2 -based resistive pastes form well-behaved interfaces with various Ag-based conductive pastes. In contrast, CaRuO 3 -based paste forms bad contacts with AgPd terminations because the density of TANSs increases in the interface area.

  15. Intrinsic flux pinning mechanisms in different thickness MgB2 films

    Directory of Open Access Journals (Sweden)

    C. Yang

    2017-03-01

    Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

  16. The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

    International Nuclear Information System (INIS)

    Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

    2013-01-01

    The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)

  17. Ensemble-averaged Rabi oscillations in a ferromagnetic CoFeB film.

    Science.gov (United States)

    Capua, Amir; Rettner, Charles; Yang, See-Hun; Phung, Timothy; Parkin, Stuart S P

    2017-06-28

    Rabi oscillations describe the process whereby electromagnetic radiation interacts coherently with spin states in a non-equilibrium interaction. To date, Rabi oscillations have not been studied in one of the most common spin ensembles in nature: spins in ferromagnets. Here, using a combination of femtosecond laser pulses and microwave excitations, we report the classical analogue of Rabi oscillations in ensemble-averaged spins of a ferromagnet. The microwave stimuli are shown to extend the coherence-time resulting in resonant spin amplification. The results we present in a dense magnetic system are qualitatively similar to those reported previously in semiconductors which have five orders of magnitude fewer spins and which require resonant optical excitations to spin-polarize the ensemble. Our study is a step towards connecting concepts used in quantum processing with spin-transport effects in ferromagnets. For example, coherent control may become possible without the complications of driving an electromagnetic field but rather by using spin-polarized currents.

  18. Diffusive Spin Dynamics in Ferromagnetic Thin Films with a Rashba Interaction

    KAUST Repository

    Wang, Xuhui

    2012-03-13

    In a ferromagnetic metal layer, the coupled charge and spin diffusion equations are obtained in the presence of both Rashba spin-orbit interaction and magnetism. The misalignment between the magnetization and the nonequilibrium spin density induced by the Rashba field gives rise to Rashba spin torque acting on the ferromagnetic order parameter. In a general form, we find that the Rashba torque consists of both in-plane and out-of-plane components, i.e., T=T Sy×m+T Sm×(y×m). Numerical simulations on a two-dimensional nanowire consider the impact of diffusion on the Rashba torque and reveal a large enhancement to the ratio T/T S for thin wires. Our theory provides an explanation for the mechanism driving the magnetization switching in a single ferromagnet as observed in the recent experiments. © 2012 American Physical Society.

  19. Ensemble-averaged Rabi oscillations in a ferromagnetic CoFeB film

    Science.gov (United States)

    Capua, Amir; Rettner, Charles; Yang, See-Hun; Phung, Timothy; Parkin, Stuart S. P.

    2017-06-01

    Rabi oscillations describe the process whereby electromagnetic radiation interacts coherently with spin states in a non-equilibrium interaction. To date, Rabi oscillations have not been studied in one of the most common spin ensembles in nature: spins in ferromagnets. Here, using a combination of femtosecond laser pulses and microwave excitations, we report the classical analogue of Rabi oscillations in ensemble-averaged spins of a ferromagnet. The microwave stimuli are shown to extend the coherence-time resulting in resonant spin amplification. The results we present in a dense magnetic system are qualitatively similar to those reported previously in semiconductors which have five orders of magnitude fewer spins and which require resonant optical excitations to spin-polarize the ensemble. Our study is a step towards connecting concepts used in quantum processing with spin-transport effects in ferromagnets. For example, coherent control may become possible without the complications of driving an electromagnetic field but rather by using spin-polarized currents.

  20. Visualization of anomalous Ettingshausen effect in a ferromagnetic film: Direct evidence of different symmetry from spin Peltier effect

    Science.gov (United States)

    Seki, T.; Iguchi, R.; Takanashi, K.; Uchida, K.

    2018-04-01

    Spatial distribution of temperature modulation due to the anomalous Ettingshausen effect (AEE) is visualized in a ferromagnetic FePt thin film with in-plane and out-of-plane magnetizations using the lock-in thermography technique. Comparing the AEE of FePt with the spin Peltier effect (SPE) of a Pt/yttrium iron garnet junction provides direct evidence of different symmetries of AEE and SPE. Our experiments and numerical calculations reveal that the distribution of heat sources induced by AEE strongly depends on the direction of magnetization, leading to the remarkable different temperature profiles in the FePt thin film between the in-plane and perpendicularly magnetized configurations.

  1. Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

    International Nuclear Information System (INIS)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

    2015-01-01

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  2. Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Sukon Phanichphant

    2007-02-01

    Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

  3. Thickness Dependence of Buckling Patterns of Ta Films Sputtered on Glass Substrates

    Science.gov (United States)

    Zhang, Yong-Ju; Yu, Sen-Jiang; Zhou, Hong; Chen, Miao-Gen; Jiao, Zhi-Wei

    2012-06-01

    Tantalum (Ta) films deposited on glass substrates have been prepared by a direct current magnetron sputtering method, and buckling patterns induced by residual compressive stress are investigated in detail. When the film thickness increases, the buckling morphologies evolve from straight-sided buckle network to wavy or wormlike wrinkles gradually, and finally change into telephone cord buckles. The geometrical parameters of the buckling patterns are found to increase linearly with the film thickness. Based on the geometrical parameters of the buckling patterns, the mechanical properties of the Ta films are also discussed in the frame of continuum elastic theory.

  4. Comparison of functional parameters of CsI:Tl crystals and thick films

    International Nuclear Information System (INIS)

    Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

    2013-01-01

    500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

  5. Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Robert Koncki

    2006-04-01

    Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

  6. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    Energy Technology Data Exchange (ETDEWEB)

    Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

  7. Effect of thickness on structural and electrical properties of Al-doped ZnO films

    International Nuclear Information System (INIS)

    Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

    2015-01-01

    In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknessesFilm thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

  8. Relation between film thickness and surface doping of MoS2 based field effect transistors

    Science.gov (United States)

    Lockhart de la Rosa, César J.; Arutchelvan, Goutham; Leonhardt, Alessandra; Huyghebaert, Cedric; Radu, Iuliana; Heyns, Marc; De Gendt, Stefan

    2018-05-01

    Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thickness of the MoS2 film is related to the induced surface doping for improved electrical performance. In this work, we report on the relation of MoS2 film thickness with the doping effect induced by the n-dopant adsorbate poly(vinyl-alcohol). Field effect transistors built using MoS2 films of different thicknesses were electrically characterized, and it was observed that the ION/OFF ratio after doping in thin films is more than four orders of magnitudes greater when compared with thick films. Additionally, a semi-classical model tuned with the experimental devices was used to understand the spatial distribution of charge in the channel and explain the observed behavior. From the simulation results, it was revealed that the two-dimensional carrier density induced by the adsorbate is distributed rather uniformly along the complete channel for thin films (<5.2 nm) contrary to what happens for thicker films.

  9. Quantitative characterization of the composition, thickness and orientation of thin films in the analytical electron microscope

    International Nuclear Information System (INIS)

    Williams, D.B.; Watanabe, M.; Papworth, A.J.; Li, J.C.

    2003-01-01

    Compositional variations in thin films can introduce lattice-parameter changes and thus create stresses, in addition to the more usual stresses introduced by substrate-film mismatch, differential thermal expansion, etc. Analytical electron microscopy comprising X-ray energy-dispersive spectrometry within a probe-forming field-emission gun scanning transmission electron microscope (STEM) is one of the most powerful methods of composition measurement on the nanometer scale, essential for thin-film analysis. Recently, with the development of improved X-ray collection efficiencies and quantitative computation methods it has proved possible to map out composition variations in thin films with a spatial resolution approaching 1-2 nm. Because the absorption of X-rays is dependent on the film thickness, concurrent composition and film thickness determination is another advantage of X-ray microanalysis, thus correlating thickness and composition variations, either of which may contribute to stresses in the film. Specific phenomena such as segregation to interfaces and boundaries in the film are ideally suited to analysis by X-ray mapping. This approach also permits multiple boundaries to be examined, giving some statistical certainty to the analysis particularly in nano-crystalline materials with grain sizes greater than the film thickness. Boundary segregation is strongly affected by crystallographic misorientation and it is now possible to map out the orientation between many different grains in the (S)TEM

  10. A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature

    Science.gov (United States)

    Chung, Jun Young; Douglas, Jack F.; Stafford, Christopher M.

    2017-10-01

    We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition Tg by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and Tg (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below Tg, indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature—both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

  11. Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

    Directory of Open Access Journals (Sweden)

    Liviu Duta

    2016-01-01

    Full Text Available We report a study on the biocompatibility vs. thickness in the case of titanium nitride (TiN films synthesized on 410 medical grade stainless steel substrates by pulsed laser deposition. The films were grown in a nitrogen atmosphere, and their in vitro cytotoxicity was assessed according to ISO 10993-5 [1]. Extensive physical-chemical analyses have been carried out on the deposited structures with various thicknesses in order to explain the differences in biological behavior: profilometry, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS, X-ray diffraction and surface energy measurements. XPS revealed the presence of titanium oxynitride beside TiN in amounts that vary with the film thickness. The cytocompatibility of films seems to be influenced by their TiN surface content. The thinner films seem to be more suitable for medical applications, due to the combined high values of bonding strength and superior cytocompatibility.

  12. Analysis of pulsed laser deposited amorphous chalcogenide film thickness distribution: Plume deflection angle dependence

    OpenAIRE

    Pavlišta , Martin; Zajac , Vit; Nazabal , Virginie; Gutwirth , Jan; Gouttefangeas , Francis; Němec , Petr

    2018-01-01

    International audience; Pulsed laser deposition exploiting a KrF excimer laser was used to fabricate amorphous As-S thin films from bulk As2S3 glass target. Thickness profile of the film was extracted from variable angle spectroscopic ellipsometry data. The dependence of thickness distribution of prepared thin layer on laser beam plume deflection angle was evaluated and corresponding equations were suggested.

  13. Dual-angle, spectral reconstruction imaging method for the determination of dielectric thin-film thickness.

    Science.gov (United States)

    Kruschwitz, Jennifer D T; Berns, Roy S

    2017-08-01

    The thickness of optical thin films, such as dielectrics, can be determined by the use of a profilometer or by a spectrophotometer. Both of these standard methods have coated area size limitations. Converting a digital camera to a spectrophotometer eliminates these size limitations. This work reviews a simple method for determining the physical thickness of a dielectric film on a silicon wafer using two images from a digital camera.

  14. Characterization of the flooding in vertical tubes by means of the film thickness measurement

    International Nuclear Information System (INIS)

    Malandrone, M.; Mioliggi, L.; Panella, B.; Scorta, G.

    1992-01-01

    The air-water countercurrent flow up to the flooding transition in a vertical tube has been experimentally investigated by liquid film thickness measurement performed by means of an electrical two-wires conductance probe. The liquid film mean thickness, the probability density function, the spectral power density and the power of the signal have been derived for a wide range of air and water flow rate, and related to the flow pattern with particular attention to the flooding phenomena. (6 figures) (Author)

  15. Thickness Effect on Properties of Sprayed In2S3 Films for Photovoltaic Applications

    Science.gov (United States)

    Bouguila, N.; Kraini, M.; Halidou, I.; Lacaze, E.; Bouchriha, H.; Bouzouita, H.

    2016-01-01

    Indium sulfide (In2S3) films have been deposited on soda-lime glass substrates using a spray technique (CSP). Indium chloride and thiourea were used as precursors at a molar ratio of S:In = 2. The substrate temperature was fixed at 340°C. The effect of film thickness on the structural, morphological and optical properties of the as-deposited films has been studied. These films were characterized by x-ray diffraction, scanning electron microscopy (SEM), atomic force microscopy (AFM) and optical absorption spectroscopy. As-prepared samples were polycrystalline with a cubic structure and (400) as preferential orientation. Their grain size increased from 35 nm to 41 nm with increasing thickness whereas the dislocation density and microstrain of the films decreased with the increase of thickness. Both SEM and AFM images showed that the films were homogenous with an increase of the surface roughness with the increase of thickness. The optical transmittance of the films decreased from 80% to 20% in the visible and infrared regions when the thickness was increased from 0.78 μm to 6.09 μm. The optical band gap E g was found to be in the range of 2.75-2.19 eV and showed a decrease with film thickness. Based on the measured optical constants (n and k), a Wemple-Didomenico model was used to determine the values of single oscillator energy ( E 0), dispersion energy ( E d), optical band gap ( E g) and high frequency dielectric constant ( \\varepsilon_{∞} ). In addition, these films exhibited n-type conductivity and were highly resistive. These results confirm that In2S3 thin films are a promising alternative as a buffer-layer material for CuInGa(S,Se)2-based solar cells.

  16. Temperature- and thickness-dependent elastic moduli of polymer thin films

    Directory of Open Access Journals (Sweden)

    Ao Zhimin

    2011-01-01

    Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

  17. Thickness dependence of magnetic properties in La–Co substituted strontium hexaferrite films with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Hui, Yajuan [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Cheng, Weiming, E-mail: wmcheng@mail.hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Yan, Peng [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Chen, Jincai [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Miao, Xiangshui [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2015-09-15

    The thickness dependence of magnetization reversal and coercivity behavior for La–Co substituted strontium hexaferrite (Sr-M) films was investigated. It is found that perpendicular anisotropy appears only when film thickness (t) is above 110 nm. With increasing t, perpendicular anisotropy energy (K{sub u⊥}) increases gradually to its maximum of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm, but turns to decrease when t>300 nm. Moreover, when t>110 nm, those films exhibit domains pinning or Stoner–Wohlfarth reversal model, present large K{sub u⊥} values and a rapid increase in H{sub c⊥}. However, while t≤110 nm, Sr-M films show nucleation model of magnetization reversal and perform low coercivity. The origin of the coercivity varying with thickness should be correlated with the grain size and preferred orientations in Sr-M films. - Highlights: • Thickness dependence in submicro-scale bulk system is investigated for La–Sr–Co–Fe–O films. • (0 0 1) preferred orientation gradually increases until t=300 nm and then declines. • The magnetization reversal presents different models with thickness. • Perpendicular anisotropy energy increases to maximum value of 1.76×10{sup 6} erg/cm{sup 3} at t=300 nm. • The coercivity varying with thickness is correlated with the grain size and preferred orientation.

  18. Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

    Directory of Open Access Journals (Sweden)

    Shridhar N. Mathad

    2016-03-01

    Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

  19. Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

    Science.gov (United States)

    Osabe, Keiichi; Kawai, Kotaro

    2017-03-01

    In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

  20. The effect of Argon ion irradiation on the thickness and structure of ultrathin amorphous carbon films

    Energy Technology Data Exchange (ETDEWEB)

    Xie, J.; Komvopoulos, K., E-mail: kyriakos@me.berkeley.edu [Department of Mechanical Engineering, University of California, Berkeley, California 94720 (United States)

    2016-03-07

    Carbon films synthesized by plasma-enhanced chemical vapor deposition (PECVD) and filtered cathodic vacuum arc (FCVA) exhibit a layered structure consisting of a bottom (interface) and a top (surface) layer rich in sp{sup 2} atomic carbon bonding and a middle (bulk) layer of much higher sp{sup 3} content. Because of significant differences in the composition, structure, and thickness of these layers, decreasing the film thickness may negatively affect its properties. In this study, transmission electron microscopy (TEM) and electron energy loss spectroscopy (EELS) were used to examine the effect of Ar{sup +} ion irradiation on the structure and thickness of ultrathin films of hydrogenated amorphous carbon (a-C:H) and hydrogen-free amorphous carbon (a-C) deposited by PECVD and FCVA, respectively. The TEM and EELS results show that 2-min ion irradiation decreases the film thickness without markedly changing the film structure and composition, whereas 4-min ion irradiation results in significant film thinning and a moderate decrease of the sp{sup 3} content of the bulk layer. This study demonstrates that Ar{sup +} ion irradiation is an effective post-deposition process for reducing the thickness and tuning the structure of ultrathin carbon films. This capability has direct implications in the synthesis of ultrathin protective carbon overcoats for extremely high-density magnetic recording applications.

  1. Hydrophobic switching nature of methylcellulose ultra-thin films: thickness and annealing effects

    International Nuclear Information System (INIS)

    Innis-Samson, Vallerie Ann; Sakurai, Kenji

    2011-01-01

    We have studied the thermosensitive property of methylcellulose (MC) thin films supported on Si substrate by static sessile drop contact angle measurements, and their surface properties and thin film structure by x-ray reflectivity (XRR) and atomic force microscopy (AFM) techniques. From the static sessile drop contact angle measurements, the MC thin films showed the characteristic hydrophilic-to-hydrophobic transition at ∼70 0 C, which is the lower critical solution temperature of the bulk solution volume phase separation transition. For films with thickness d ≤ R g , the onset of such a transition is affected by the film thickness while very thick films, d >> R g , yielded higher contact angles. Annealing the MC thin films with thicknesses ∼200 A (near the radius of gyration, R g , of the polymer) below the bulk glass transition temperature (T g ∼ 195 deg. C) would not change the hydrophobic switch nature of the film but annealing 'at' and above the bulk T g would change its surface property. From surface topography images by AFM, there were no significant changes in either the roughness or the film texture before and after annealing. With XRR data, we were able to determine that such changes in the surface properties are highly correlated to the film thickness changes after the annealing process. This study, we believe, is the first to examine the thermal annealing affects on the thermal response function of a thermoresponsive polymer and is important for researching how to tailor the hydrophobic switching property of MC thin films for future sensing applications. (paper)

  2. Correlation of thickness and magnetization in LCMO film

    Indian Academy of Sciences (India)

    tion under FC and ZFC conditions may be due to strain-induced anisotropy arising from the lattice mismatch between the substrate and the film or due to the shape anisotropy due to epitaxial growth. Keywords. Colossal magnetoresistance; manganite; thin film; La. 0.67. Mn0.33MnO3. PACS Nos 75.30.Gw; 75.70.-i; 75.30.Vn.

  3. Chromium-induced ferromagnetism with perpendicular anisotropy in topological crystalline insulator SnTe (111) thin films

    Science.gov (United States)

    Wang, Fei; Zhang, Hongrui; Jiang, Jue; Zhao, Yi-Fan; Yu, Jia; Liu, Wei; Li, Da; Chan, Moses H. W.; Sun, Jirong; Zhang, Zhidong; Chang, Cui-Zu

    2018-03-01

    Topological crystalline insulator is a recently discovered topological phase of matter. It possesses multiple Dirac surface states, which are protected by the crystal symmetry. This is in contrast to the time-reversal symmetry that is operative in the well-known topological insulators. In the presence of a Zeeman field and/or strain, the multiple Dirac surface states are gapped. The high-Chern-number quantum anomalous Hall (QAH) state is predicted to emerge if the chemical potential resides in all the Zeeman gaps. Here, we use molecular-beam epitaxy to grow 12 double-layer (DL) pure and Cr-doped SnTe (111) thin film on heat-treated SrTi O3 (111) substrate using a quintuple layer of insulating (Bi0.2Sb0.8 ) 2T e3 topological insulator as a buffer film. The Hall traces of Cr-doped SnTe film at low temperatures display square hysteresis loops indicating long-range ferromagnetic order with perpendicular anisotropy. The Curie temperature of the 12 DL S n0.9C r0.1Te film is ˜110 K. Due to the chemical potential crossing the bulk valence bands, the anomalous Hall resistance of 12 DL S n0.9C r0.1Te film is substantially lower than the predicted quantized value (˜1 /4 h /e2 ). It is possible that with systematic tuning the chemical potential via chemical doping and electrical gating, the high-Chern-number QAH state can be realized in the Cr-doped SnTe (111) thin film.

  4. Quantifying Local Thickness and Composition in Thin Films of Organic Photovoltaic Blends by Raman Scattering

    KAUST Repository

    Rodríguez-Martínez, Xabier

    2017-07-06

    We report a methodology based on Raman spectroscopy that enables the non-invasive and fast quantitative determination of local thickness and composition in thin films (from few monolayers to hundreds of nm) of one or more components. We apply our methodology to blends of organic conjugated materials relevant in the field of organic photovoltaics. As a first step, we exploit the transfer-matrix formalism to describe the Raman process in thin films including reabsorption and interference effects of the incoming and scattered electric fields. This allows determining the effective solid-state Raman cross-section of each material by studying the dependence of the Raman intensity on film thickness. These effective cross sections are then used to estimate the local thickness and composition in a series of polymer:fullerene blends. We find that the model is accurate within ±10 nm in thickness and ±5 vol% in composition provided that (i) the film thickness is kept below the thickness corresponding to the first maximum of the calculated Raman intensity oscillation; (ii) the materials making up the blend show close enough effective Raman cross-sections; and (iii) the degree of order attained by the conjugated polymer in the blend is similar to that achieved when cast alone. Our methodology opens the possibility to make quantitative maps of composition and thickness over large areas (from microns to centimetres squared) with diffraction-limited resolution and in any multi-component system based thin film technology.

  5. Effects of film thickness and magnetism on the electronic structure of MnO films

    Science.gov (United States)

    Kundu, Asish K.; Barman, Sukanta; Menon, Krishnakumar S. R.

    2017-11-01

    We investigate the influence of film thickness and magnetism on the electronic structure of a strongly correlated prototypical system, MnO(001) films epitaxially grown on Ag(001), using angle-resolved photoemission spectroscopy (ARPES) and x-ray photoelectron spectroscopy (XPS) techniques. XPS measurements have confirmed the MnO stoichiometry as well as the layer-by-layer growth mode of the films, while the ARPES measurements have confirmed the high structural quality of the films by the observation of clear band dispersions devoid of any sample charging effects. For lower coverage films, finite-size effects/reduced correlation effects are observed, while from 3 ML coverages, bulklike band structures are formed. Detailed band mapping along Γ ¯-X ¯ and Γ ¯-M ¯ directions reveal a relative dispersion between Mn-derived eg and t2 g states up to 1.2 eV, in contrast to previous ARPES results where maximum relative dispersions of ±0.1 eV were reported, while our results excellently match with the theoretically predicted dispersions. By comparing with theoretical results we show the hybridization between O 2 p with the Mn eg states giving rise to the observed dispersions resulting from the highly dispersive nature of the O 2 p bands. Furthermore, we show that during the paramagnetic (PM) to antiferromagnetic (AFM) transition, the valence band gets narrower with an enhancement of the e5g peak intensity, along with the widening of the energy gap by 200 meV. Theoretically, Terakura et al. had predicted the possibility of a similar outcome due to the decrease of the effective d d hopping between the oppositely magnetized cations during the PM to AFM-II transition because of the d d σ type interaction, yet the experimental verification was absent in the literature. We believe that the exact same mechanism as predicted by Terakura et al. is responsible for the changes seen in the electronic structure during magnetic phase transition and argue that a similar trend can be

  6. Study of β-phase development in spin-coated PVDF thick films

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Abstract. A study was conducted to ascertain the effect of variation in spin speed and baking temperature on β-phase content in the spin-coated poly(vinylidene fluoride) (PVDF) thick films (∼4−25 μm). Development of β-phase is dependent on film stretching and crystallization temperature. Therefore, to ...

  7. Investigation of Top/bottom Electrode and Diffusion Barrier Layer for PZT thick film MEMS Sensors

    DEFF Research Database (Denmark)

    Pedersen, Thomas; Hindrichsen, Christian Carstensen; Lou-Møller, R.

    2007-01-01

    In this work screen printed piezoelectric Ferroperm PZ26 lead zirconate titanate (PZT) thick film is used for two MEMS devices. A test structure is used to investigate several aspects regarding bottom and top electrodes. 450 nm ZrO2 thin film is found to be an insufficient diffusion barrier layer...

  8. Study of β-phase development in spin-coated PVDF thick films

    Indian Academy of Sciences (India)

    A study was conducted to ascertain the effect of variation in spin speed and baking temperature on β -phase content in the spin-coated poly(vinylidene fluoride) (PVDF) thick films ( ∼ 4−25 μ m). Development of β -phase is dependent on film stretching and crystallization temperature. Therefore, to study the development of β ...

  9. Superconducting YBaCuO_3 thick film (T,(0)= 92 K) on a newly ...

    Indian Academy of Sciences (India)

    Cu3O7– superconducting film has been developed. The dielectric constant and loss factor values of the material are in the range suitable for its use as substrate for microwave application. A YBa2Cu3O7– superconducting thick film dip ...

  10. Ferromagnetic and paramagnetic magnetization of implanted GaN:Ho,Tb,Sm,Tm films

    Czech Academy of Sciences Publication Activity Database

    Maryško, Miroslav; Hejtmánek, Jiří; Laguta, Valentyn; Sofer, Z.; Sedmidubský, D.; Šimek, P.; Veselý, M.; Mikulics, M.; Buchal, C.; Macková, Anna; Malinský, Petr; Wilhelm, R. A.

    2015-01-01

    Roč. 117, č. 17 (2015), "17B907-1"-"17B907-4" ISSN 0021-8979 R&D Projects: GA ČR GA13-20507S; GA ČR(CZ) GBP108/12/G108; GA MŠk LM2011019 Institutional support: RVO:68378271 ; RVO:61389005 Keywords : magnetic field, * ferromagnetic and paramagnetic magnetization Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.101, year: 2015

  11. Symmetry-broken dissipative exchange flows in thin-film ferromagnets with in-plane anisotropy

    Science.gov (United States)

    Iacocca, Ezio; Silva, T. J.; Hoefer, Mark A.

    2017-10-01

    Planar ferromagnetic channels have been shown to theoretically support a long-range ordered and coherently precessing state where the balance between local spin injection at one edge and damping along the channel establishes a dissipative exchange flow, sometimes referred to as a spin superfluid. However, realistic materials exhibit in-plane anisotropy, which breaks the axial symmetry assumed in current theoretical models. Here, we study dissipative exchange flows in a ferromagnet with in-plane anisotropy from a dispersive hydrodynamic perspective. Through the analysis of a boundary value problem for a damped sine-Gordon equation, dissipative exchange flows in a ferromagnetic channel can be excited above a spin current threshold that depends on material parameters and the length of the channel. Symmetry-broken dissipative exchange flows display harmonic overtones that redshift the fundamental precessional frequency and lead to a reduced spin pumping efficiency when compared to their symmetric counterpart. Micromagnetic simulations are used to verify that the analytical results are qualitatively accurate, even in the presence of nonlocal dipole fields. Simulations also confirm that dissipative exchange flows can be driven by spin transfer torque in a finite-sized region. These results delineate the important material parameters that must be optimized for the excitation of dissipative exchange flows in realistic systems.

  12. Growth and characterization of epitaxial thin films and multiferroic heterostructures of ferromagnetic and ferroelectric materials

    Science.gov (United States)

    Mukherjee, Devajyoti

    Multiferroic materials exhibit unique properties such as simultaneous existence of two or more of coupled ferroic order parameters (ferromagnetism, ferroelectricity, ferroelasticity or their anti-ferroic counterparts) in a single material. Recent years have seen a huge research interest in multiferroic materials for their potential application as high density non-volatile memory devices. However, the scarcity of these materials in single phase and the weak coupling of their ferroic components have directed the research towards multiferroic heterostructures. These systems operate by coupling the magnetic and electric properties of two materials, generally a ferromagnetic material and a ferroelectric material via strain. In this work, horizontal heterostructures of composite multiferroic materials were grown and characterized using pulsed laser ablation technique. Alternate magnetic and ferroelectric layers of cobalt ferrite and lead zirconium titanate, respectively, were fabricated and the coupling effect was studied by X-ray stress analysis. It was observed that the interfacial stress played an important role in the coupling effect between the phases. Doped zinc oxide (ZnO) heterostructures were also studied where the ferromagnetic phase was a layer of manganese doped ZnO and the ferroelectric phase was a layer of vanadium doped ZnO. For the first time, a clear evidence of possible room temperature magneto-elastic coupling was observed in these heterostructures. This work provides new insight into the stress mediated coupling mechanisms in composite multiferroics.

  13. THICKNESS DEPENDENCE OF BUCKLING PATTERNS OF Ta FILMS SPUTTERED ON GLASS SUBSTRATES

    OpenAIRE

    YONG-JU ZHANG; SEN-JIANG YU; HONG ZHOU; MIAO-GEN CHEN; ZHI-WEI JIAO

    2012-01-01

    Tantalum (Ta) films deposited on glass substrates have been prepared by a direct current magnetron sputtering method, and buckling patterns induced by residual compressive stress are investigated in detail. When the film thickness increases, the buckling morphologies evolve from straight-sided buckle network to wavy or wormlike wrinkles gradually, and finally change into telephone cord buckles. The geometrical parameters of the buckling patterns are found to increase linearly with the film th...

  14. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  15. Evidence of non-Dzyaloshinskii–Moriya ferromagnetism in epitaxial BiFeO3 films

    NARCIS (Netherlands)

    Prokhorov, V.G.; Kaminsky, G.G.; Kim, J.M.; Eom, T.W.; Park, J.S.; Lee, Y.P.; Svetchnikov, V.L.; Levtchenko, G.G.; Nikolaenko, Y.M.; Khokhlov, V.A.

    2011-01-01

    X-ray diffraction analysis and high-resolution electron microscopy of BiFeO3 films prepared by dc magnetron sputtering on single-crystal LaAlO3 (001) substrates reveal that the films have a highly c-oriented orthorhombic crystalline structure. The magnetic properties of the BiFeO3 films are typical

  16. Raman scattering investigations on Co and Mn doped ZnO epitaxial films: local vibration modes and defect associated ferromagnetism

    Science.gov (United States)

    Cao, Qiang; Liu, Guolei; Yan, Shishen; Mei, Liangmo

    2014-03-01

    The studies of local vibration modes (LVMs) of Co or Mn substitution in wurtzite ZnO lattice have been rather limited, and evolution of LVM bound defects as well as associated ferromagnetism are still poorly understood.In this paper, Raman scattering spectroscopy has been performed on high quality Co and Mn doped ZnO epitaxial films, which were grown on Al2O3 (0001) by oxygen-plasma assisted molecular beam epitaxy. Raman measurements revealed two local vibration modes (LVMs) at 723 and 699 cm?1 due to the substitution of Co2+ in wurtzite ZnO lattice. The LVM at 723 cm?1 is found to be an elemental sensitive vibration mode for Co substitution. The LVM at 699cm-1 can be attributed to enrichment of Co2+ bound with oxygen vacancy, the cobalt?oxygen vacancy?cobalt complexes, which associated with ferromagnetism. It reveals two competitive local vibration modes (LVMs) at 712 and 523 cm-1 due to the substitution of Mn ions in wurtzite ZnO lattice. The LVM at 712cm-1 is found to be an elemental vibration mode of Mn substitution in wurtzite ZnO lattice, while the LVM at 523cm-1 can be attributed to the local vibration mode of acceptor bound Mn substitution in wurtzite ZnO lattice. the NSF Grant NO. 11374189 and 51231007.

  17. Physicochemical controls on absorbed water film thickness in unsaturated geological media

    Energy Technology Data Exchange (ETDEWEB)

    Tokunaga, T.

    2011-06-14

    Adsorbed water films commonly coat mineral surfaces in unsaturated soils and rocks, reducing flow and transport rates. Therefore, it is important to understand how adsorbed film thickness depends on matric potential, surface chemistry, and solution chemistry. Here, the problem of adsorbed water film thickness is examined through combining capillary scaling with the Derjaguin-Landau-Verwey-Overbeek (DLVO) theory. Novel aspects of this analysis include determining capillary influences on film thicknesses, and incorporating solution chemistry-dependent electrostatic potential at air-water interfaces. Capillary analysis of monodisperse packings of spherical grains provided estimated ranges of matric potentials where adsorbed films are stable, and showed that pendular rings within drained porous media retain most of the 'residual' water except under very low matric potentials. Within drained pores, capillary contributions to thinning of adsorbed films on spherical grains are shown to be small, such that DLVO calculations for flat surfaces are suitable approximations. Hamaker constants of common soil minerals were obtained to determine ranges of the dispersion component to matric potential-dependent film thickness. The pressure component associated with electrical double layer forces was estimated using the compression and linear superposition approximations. The pH-dependent electrical double layer pressure component is the dominant contribution to film thicknesses at intermediate values of matric potential, especially in lower ionic strength solutions (< 10 mol m{sup -3}) on surfaces with higher magnitude electrostatic potentials (more negative than - 50 mV). Adsorbed water films are predicted to usually range in thickness from 1 to 20 nm in drained pores and fractures of unsaturated environments.

  18. Spacer Thickness-Dependent Electron Transport Performance of Titanium Dioxide Thick Film for Dye-Sensitized Solar Cells

    Directory of Open Access Journals (Sweden)

    Reda E. El-Shater

    2015-01-01

    Full Text Available A titanium dioxide (P25 film was deposited by cast coating as conductive photoelectrode and subsequently immersed in dye solution (N719 to fabricate the photoanode of dye-sensitized solar cells (DSSCs. A plastic spacer was used as a separation and sealant layer between the photoanode and the counter electrode. The effect of the thickness of this spacer on the transfer of electrons in the liquid electrolyte of the DSSCs was studied by means of both IV curves and electrochemical impedance. Using a spacer thickness range of 20 μm to 50 μm, efficiency ranges from 3.73% to 7.22%. The highest efficiency of 7.22% was obtained with an optimal spacer thickness of 40 μm.

  19. Optimizing diode thickness for thin-film solid state thermal neutron detectors

    Energy Technology Data Exchange (ETDEWEB)

    Murphy, John W.; Mejia, Israel; Quevedo-Lopez, Manuel A.; Gnade, Bruce [Department of Materials and Science, University of Texas at Dallas, Richardson, Texas 75080 (United States); Kunnen, George R.; Allee, David [Flexible Display Center at Arizona State University, Tempe, Arizona 85284 (United States)

    2012-10-01

    In this work, we investigate the optimal thickness of a semiconductor diode for thin-film solid state thermal neutron detectors. We evaluate several diode materials, Si, CdTe, GaAs, C (diamond), and ZnO, and two neutron converter materials, {sup 10}B and {sup 6}LiF. Investigating a coplanar diode/converter geometry, we determine the minimum semiconductor thickness needed to achieve maximum neutron detection efficiency. By keeping the semiconductor thickness to a minimum, gamma rejection is kept as high as possible. In this way, we optimize detector performance for different thin-film semiconductor materials.

  20. Effect of surface hybridization on RKKY coupling in ferromagnet/topological insulator/ferromagnet trilayer system

    Directory of Open Access Journals (Sweden)

    Cong Son Ho

    2017-05-01

    Full Text Available We theoretically investigate the RKKY exchange coupling between two ferromagnets (FM separated by a thin topological insulator film (TI. We find an unusual dependence of the RKKY exchange coupling Φex on the TI thickness (tTI. First, when tTI decreases, the coupling amplitude increases at first and reaches its maximum value at some critical thickness, below which the amplitude turns to diminish. This trend is attributed to the hybridization between surfaces of the TI film, which opens a gap below critical thickness and thus turns the surfaces into insulating state from semi-metal state. In insulating phase, diamagnetism induced by the gap-opening compensates paramagnetism of Dirac state, resulting in a diminishing magnetic susceptibility and RKKY coupling. For typical parameters, the critical thickness in Bi2Se3 thin film is estimated to be in the range of 3-5 nm.

  1. Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

    International Nuclear Information System (INIS)

    Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

    2007-01-01

    Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

  2. Anomalous size effect in conductivity of Bi films of small thickness

    International Nuclear Information System (INIS)

    Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

    1995-01-01

    Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

  3. Ceramic thick film humidity sensor based on MgTiO3 + LiF

    International Nuclear Information System (INIS)

    Kassas, Ahmad; Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand; Lakiss, Hassan; Hamieh, Tayssir

    2013-01-01

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO 3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO 3 /LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

  4. Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

    Energy Technology Data Exchange (ETDEWEB)

    Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

    2013-10-15

    Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

  5. Growth of BaTiO3-PVDF composite thick films by using aerosol deposition

    Science.gov (United States)

    Cho, Sung Hwan; Yoon, Young Joon

    2016-01-01

    Barium titanate (BaTiO3)-polyvinylidene fluoride (PVDF) composite thick films were grown by using aerosol deposition at room temperature with BaTiO3 and PVDF powders. To produce a uniform composition in ceramic and polymer composite films, which show a substantial difference in specific gravity, we used PVDF-coated BaTiO3 powders as the starting materials. An examination of the microstructure confirmed that the BaTiO3 were well distributed in the PVDF matrix in the form of a 0 - 3 compound. The crystallite size in the BaTiO3-PVDF composite thick films was 5 ˜ 50 times higher than that in pure BaTiO3 thick films. PVDF plays a role in suppressing the fragmentation of BaTiO3 powder during the aerosol deposition process and in controlling the relative permittivity.

  6. Thickness dependence of Hall mobility of HWE grown PbTe films

    International Nuclear Information System (INIS)

    Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

    1985-01-01

    Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

  7. Room-Temperature Synthesis of Carbonaceous Films of Defined Thickness

    Czech Academy of Sciences Publication Activity Database

    Kavan, Ladislav; Micka, Karel; Hlavatý, Jaromír

    2004-01-01

    Roč. 16, - (2004), s. 4043-4049 ISSN 0897-4756 R&D Projects: GA AV ČR IAA4040306; GA AV ČR KSK4040110 Keywords : carbonaceous films * liquid amalgam * alkali metal Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 4.103, year: 2004

  8. Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

    Directory of Open Access Journals (Sweden)

    Kuo-Ching Kuo

    2007-04-01

    Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

  9. Influence of cement film thickness on the retention of implant-retained crowns.

    Science.gov (United States)

    Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

    2013-12-01

    The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

  10. Humidity sensing properties of WO{sub 3} thick film resistor prepared by screen printing technique

    Energy Technology Data Exchange (ETDEWEB)

    Garde, Arun S, E-mail: arungarde@yahoo.co.in

    2014-12-25

    Highlights: • Polycrystalline WO{sub 3} Thick films are fabricated by screen printing technique. • Monoclinic phases were the majority in formation of films. • The peak at 1643 cm{sup −1} shows stretching vibrations attributed to W-OH of adsorbed H{sub 2}O. • Absorption peaks in the range 879–650 cm{sup −1} are attributed to the stretching W-O-W bonds. • Increase in resistance with decrease in RH when exposed to 20–100% RH. - Abstract: Thick films of tungsten oxide based were prepared using standard screen printing technique. To study the effect of temperature on the thick films were fired at different temperature for 30 min in air atmosphere. The WO{sub 3} thick films were characterized with X-ray diffraction, scanning electron microscopy and EDAX for elemental analysis. The formation of mixed phases of the film together with majority of monoclinic phase was observed. IR spectra confirm the peak at 1643 cm{sup −1} clearly shows stretching vibrations attributed to the W-OH bending vibration mode of the adsorbed water molecules. The absorption peaks in the range 879–650 cm{sup −1} are attributed to the stretching W-O-W bonds (i.e. ν [W-O{sub inter}-W]). The peak located at 983 cm{sup −1} belong to W=O terminal of cluster boundaries. A change in the resistance was observed with respect to the relative humidity when the WO{sub 3} thick films were exposed to a wide humidity range of 20–100%. An increasing firing temperature of WO{sub 3} film increases with the sensitivity. The parameters such as sensitivity and hysteresis of the WO{sub 3} film sensors have been evaluated.

  11. Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

    2012-09-01

    Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

  12. Interaction of water with faceted NiO(1 1 1) surface tuned by films thickness

    Science.gov (United States)

    Liu, Lixia; Wang, Shuai; Liu, Shuming; Guo, Qinlin; Guo, Jiandong

    2018-01-01

    The interaction of water with the polar surface of NiO(1 1 1) films has been investigated using various in situ surface analytical techniques, as well as ex situ scanning electron microscopy and atomic force microscopy. The {1 0 0} facets are formed on NiO(1 1 1) films upon annealing. The boundary between {1 0 0} facet and bare (1 1 1) face and the corner on the facet can facilitate dissociation of water. The total boundary length and the number of corner sites vary with film thickness. The dissociated hydroxyls are thermally stable up to 700 K on the thinner films. Consequently the activity of water dissociation can be tuned by adjusting the film thickness.

  13. Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

    Directory of Open Access Journals (Sweden)

    Mia Nasrul Haque

    2017-10-01

    Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

  14. Impact of thickness on microscopic and macroscopic properties of Fe-Te-Se superconductor thin films

    Directory of Open Access Journals (Sweden)

    N. Zhang

    2015-04-01

    Full Text Available A series of iron based Fe-Te-Se superconductor thin films depositing on 0.7wt% Nb-doped SrTiO3 at substrate temperatures in the 250°C -450°C range by pulsed laser ablation of a constituents well defined precursor FeTe0.55Se0.55 target sample. We study the possible growth mechanism and its influence on the superconductor properties. Experimental results indicate the superconductive and non-superconductive properties are modulated only by the thickness of the thin films through the temperature range. The films appear as superconductor whenever the thickness is above a critical value ∼30nm and comes to be non-superconductor below this value. Relative ratios of Fe to (Te+Se in the films retained Fe/(Te+Se1 for non-superconductor no matter what the film growth temperature was. The effect of film growth temperature takes only the role of modulating the ratio of Te/Se and improving crystallinity of the systems. According to the experimental results we propose a sandglass film growth mechanism in which the interfacial effect evokes to form a Fe rich area at the interface and Se or Te starts off a consecutive filling up process of chalcogenide elements defect sides, the process is significant before the film thickness reaches at ∼30nm.

  15. Electron spin resonance study of the demagnetization fields of the ferromagnetic and paramagnetic films

    Directory of Open Access Journals (Sweden)

    I.I. Gimazov, Yu.I. Talanov

    2015-12-01

    Full Text Available The results of the electron spin resonance study of the La1-xCaxMnO3 manganite and the diphenyl-picrylhydrazyl thin films for the magnetic field parallel and perpendicular to plane of the films are presented. The temperature dependence of the demagnetizing field is obtained. The parameters of the Curie-Weiss law are estimated for the paramagnetic thin film.

  16. Effects of thickness on electronic structure of titanium thin films

    Indian Academy of Sciences (India)

    using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium L2,3 edge in total electron yield. (TEY) mode and transmission ... suring the total electron number per incident photon emi- tted from the material as a ..... hand, data points above this critical thickness at 4–10 nm in figure 4(b) reveals that BR is ...

  17. Film Thickness Prediction in an Annular Two-Phase Flow around C-shaped Bend

    Directory of Open Access Journals (Sweden)

    P.M. Tkaczyk

    2011-03-01

    Full Text Available A finite volume method-based CFD model has been developed in the commercial code Star CD to simulate the annular gas-liquid flow through pipes and bends. The liquid film is solved explicitly by means of a modified Volume of Fluid (VOF method. The droplets are traced using a Lagrangian technique. The film to droplets (entrainment and droplets to film (stick, bounce, spread and splash interactions are taken into account using sub-models to complement the VOF model. A good agreement is found between the computed film thickness value and those cited in the literature.

  18. Determination of oxide film thickness on aluminium using 14-MeV neutron activation and BET method

    International Nuclear Information System (INIS)

    Foerster, H.

    1983-01-01

    A new method is described for the determination of the mean film thickness of aluminium oxides by 14-MeV neutron activation analysis of the oxygen and by BET measurement of the surface area. The mean film thickness obtained is independent of the surface roughness. Stable oxide films consisting of only a few atomic layers of oxygen are detected on aluminium. (author)

  19. Atomic-scale engineering of ferroelectric-ferromagnetic interfaces of epitaxial perovskite films for functional properties.

    Science.gov (United States)

    Hausmann, Simon; Ye, Jingfan; Aoki, Toshihiro; Zheng, Jian-Guo; Stahn, Jochen; Bern, Francis; Chen, Binda; Autieri, Carmine; Sanyal, Biplab; Esquinazi, Pablo D; Böni, Peter; Paul, Amitesh

    2017-09-06

    Besides epitaxial mismatch that can be accommodated by lattice distortions and/or octahedral rotations, ferroelectric-ferromagnetic interfaces are affected by symmetry mismatch and subsequent magnetic ordering. Here, we have investigated La 0.67 Sr 0.33 MnO 3 (LSMO) samples with varying underlying unit cells (uc) of BaTiO 3 (BTO) layer on (001) and (110) oriented substrates in order to elucidate the role of symmetry mismatch. Lattice mismatch for 3 uc of BTO and symmetry mismatch for 10 uc of BTO, both associated with local MnO 6 octahedral distortions of the (001) LSMO within the first few uc, are revealed by scanning transmission electron microscopy. Interestingly, we find exchange bias along the in-plane [110]/[100] directions only for the (001) oriented samples. Polarized neutron reflectivity measurements confirm the existence of a layer with zero net moment only within (001) oriented samples. First principle density functional calculations show that even though the bulk ground state of LSMO is ferromagnetic, a large lattice constant together with an excess of La can stabilize an antiferromagnetic LaMnO 3 -type phase at the interface region and explain the experimentally observed exchange bias. Atomic scale tuning of MnO 6 octahedra can thus be made possible via symmetry mismatch at heteroepitaxial interfaces. This aspect can act as a vital parameter for structure-driven control of physical properties.

  20. The effect of film thickness and molecular structure on order and disorder in thin films of compositionally asymmetric block copolymers

    Science.gov (United States)

    Mishra, Vindhya

    Directed self-assembly of thin film block copolymers offer a high throughput-low cost route to produce next generation lithographic devices, if one can bring the defect densities in the self assembled patterns below tolerance limits. However, the ability to control the nanoscale structure or morphology in thin film block copolymers presents challenges due to confinement effects on equilibrium behavior. Using structure characterization techniques such as grazing incidence small angle X-ray scattering (GISAXS), transmission electron and atomic force microscopy as well as self-consistent field theory, we have investigated how film thickness, annealing temperature and block copolymer structure affects the equilibrium behavior of asymmetric block copolymer films. Our studies have revealed the complicated dependence of order-disorder transitions, order-order transitions and symmetry transitions on film thickness. We found that the thickness dependent transition in the packing symmetry of spherical morphology diblock copolymers can be suppressed by blending with a small amount of majority block homopolymer, which allowed us to resolve the driving force behind this transition. Defect densities in, and the order-disorder transition temperature of, thin films of graphoepitaxially aligned diblock copolymer cylinders showed surprising sensitivity to the microdomain spacing. Methods to mitigate defect formation in thin films have been identified. The challenge of quantification of structural order in these systems was overcome using GISAXS, which allowed us to study the phenomena of disordering in two and three dimensions. Through studies on block copolymers which exhibit an order-order transition in bulk, we found that that subtle differences in the packing frustration of the spherical and cylindrical phases as well as the higher configurational entropy of free chain ends at the surface can drive the equilibrium configuration in thin films away from the stable bulk structure

  1. Enhancement of 𝜷-phase in PVDF films embedded with ferromagnetic Gd5Si4 nanoparticles for piezoelectric energy harvesting

    Science.gov (United States)

    Harstad, Shane; D'Souza, Noel; Soin, Navneet; El-Gendy, Ahmed A.; Gupta, Shalabh; Pecharsky, Vitalij K.; Shah, Tahir; Siores, Elias; Hadimani, Ravi L.

    2017-05-01

    Self-polarized Gd5Si4-polyvinylidene fluoride (PVDF) nanocomposite films have been synthesized via a facile phase-inversion technique. For the 5 wt% Gd5Si4-PVDF films, the enhancement of the piezoelectric β-phase and crystallinity are confirmed using Fourier transform infrared (FTIR) spectroscopy (phase fraction, Fβ, of 81% as compared to 49% for pristine PVDF) and differential scanning calorimetry (crystallinity, Δ Xc , of 58% as compared to 46% for pristine PVDF), respectively. The Gd5Si4 magnetic nanoparticles, prepared using high-energy ball milling were characterized using Dynamic Light Scattering and Vibrating Sample Magnetometry (VSM) to reveal a particle size of ˜470 nm with a high magnetization of 11 emu/g. The VSM analysis of free-standing Gd5Si4-PVDF films revealed that while the pristine PVDF membrane shows weak diamagnetic behavior, the Gd5Si4-PVDF films loaded at 2.5 wt% and 5 wt% Gd5Si4 show enhanced ferromagnetic behavior with paramagnetic contribution from Gd5Si3 phase. The interfacial interactions between Gd5Si4 and PVDF results in the preferential crystallization of the β-phase as confirmed via the shift in the CH2 asymmetric and symmetric stretching vibrations in the FTIR. These results confirm the magnetic Gd5Si4 nanoparticles embedded in the PVDF membrane lead to an increased β-phase fraction, which paves the way for future efficient energy harvesting applications using a combination of magnetic and piezoelectric effects.

  2. Enhancement of -phase in PVDF films embedded with ferromagnetic Gd5Si4 nanoparticles for piezoelectric energy harvesting

    Directory of Open Access Journals (Sweden)

    Shane Harstad

    2017-05-01

    Full Text Available Self-polarized Gd5Si4-polyvinylidene fluoride (PVDF nanocomposite films have been synthesized via a facile phase-inversion technique. For the 5 wt% Gd5Si4-PVDF films, the enhancement of the piezoelectric β-phase and crystallinity are confirmed using Fourier transform infrared (FTIR spectroscopy (phase fraction, Fβ, of 81% as compared to 49% for pristine PVDF and differential scanning calorimetry (crystallinity, ΔXc, of 58% as compared to 46% for pristine PVDF, respectively. The Gd5Si4 magnetic nanoparticles, prepared using high-energy ball milling were characterized using Dynamic Light Scattering and Vibrating Sample Magnetometry (VSM to reveal a particle size of ∼470 nm with a high magnetization of 11 emu/g. The VSM analysis of free-standing Gd5Si4-PVDF films revealed that while the pristine PVDF membrane shows weak diamagnetic behavior, the Gd5Si4-PVDF films loaded at 2.5 wt% and 5 wt% Gd5Si4 show enhanced ferromagnetic behavior with paramagnetic contribution from Gd5Si3 phase. The interfacial interactions between Gd5Si4 and PVDF results in the preferential crystallization of the β-phase as confirmed via the shift in the CH2 asymmetric and symmetric stretching vibrations in the FTIR. These results confirm the magnetic Gd5Si4 nanoparticles embedded in the PVDF membrane lead to an increased β-phase fraction, which paves the way for future efficient energy harvesting applications using a combination of magnetic and piezoelectric effects.

  3. Modelling and optimization of film thickness variation for plasma enhanced chemical vapour deposition processes

    Science.gov (United States)

    Waddell, Ewan; Gibson, Des; Lin, Li; Fu, Xiuhua

    2011-09-01

    This paper describes a method for modelling film thickness variation across the deposition area within plasma enhanced chemical vapour deposition (PECVD) processes. The model enables identification and optimization of film thickness uniformity sensitivities to electrode configuration, temperature, deposition system design and gas flow distribution. PECVD deposition utilizes a co-planar 300mm diameter electrodes with separate RF power matching to each electrode. The system has capability to adjust electrode separation and electrode temperature as parameters to optimize uniformity. Vacuum is achieved using dry pumping with real time control of butterfly valve position for active pressure control. Comparison between theory and experiment is provided for PECVD of diamond-like-carbon (DLC) deposition onto flat and curved substrate geometries. The process utilizes butane reactive feedstock with an argon carrier gas. Radiofrequency plasma is used. Deposited film thickness sensitivities to electrode geometry, plasma power density, pressure and gas flow distribution are demonstrated. Use of modelling to optimise film thickness uniformity is demonstrated. Results show DLC uniformity of 0.30% over a 200 mm flat zone diameter within overall electrode diameter of 300mm. Thickness uniformity of 0.75% is demonstrated over a 200mm diameter for a non-conformal substrate geometry. Use of the modelling method for PECVD using metal-organic chemical vapour deposition (MOCVD) feedstock is demonstrated, specifically for deposition of silica films using metal-organic tetraethoxy-silane. Excellent agreement between experimental and theory is demonstrated for conformal and non-conformal geometries. The model is used to explore scalability of PECVD processes and trade-off against film thickness uniformity. Application to MEMS, optical coatings and thin film photovoltaics is discussed.

  4. A study on the thickness dependence of static and dynamic magnetic properties of Ni{sub 81}Fe{sub 19} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kern, P.R.; Silva, O.E. da; Siqueira, J.V. de [Departamento de Física, Universidade Federal de Santa Maria, Santa Maria 97105-900, RS (Brazil); Della Pace, R.D. [Departamento de Física, Universidade Federal de Santa Catarina, Florianópolis 88010-970, SC (Brazil); Rigue, J.N. [Coordenadoria Acadêmica, Universidade Federal de Santa Maria - campus Cachoeira do Sul, Cachoeira do Sul 96506-302, RS (Brazil); Carara, M. [Departamento de Física, Universidade Federal de Santa Maria, Santa Maria 97105-900, RS (Brazil)

    2016-12-01

    A set of Permalloy thin films with thicknesses ranging from 100 nm to 1000 nm have been investigated by in-plane hysteresis loops, magnetic torque, microwave permeability and X-ray diffraction measurements. The frequency evolution of the complex permeability was treated within the Debye relaxation model allowing the obtainment of the resonance frequency, resonance linewidth and the rotational component of the permeability at each applied field. The samples can be separated in three groups according their magnetic properties. Samples with thickness until 150 nm present magnetic properties typical of a system with a well defined in-plane uniaxial anisotropy and just one resonance frequency in the high frequency permeability spectra. Samples with thicknesses above 300 nm present magnetization loops almost isotropic in-plane and two resonance frequencies in the permeability spectra. The samples at the intermediate thickness range present some characteristic from thinner and other of the thicker group. Ferromagnetic resonance and torque measurements have detected the presence of a small uniaxial anisotropy even in the thicker group of samples. The multiple ferromagnetic resonances in the permeability spectra present in the thicker group of samples were treated as non-interacting magnetic systems. These characteristics were attributed to the appearance of stripe domains together with a rotatable anisotropy, due to an out-of-plane magnetization component. The relaxation mechanisms which give rise to the resonance linewidth were discussed considering two possible sources, Gilbert damping and anisotropy dispersion. While the Gilbert damping was almost the same for all samples it was verified the anisotropy dispersion increase with the thickness. - Highlights: • Angular and field evolution of the resonance frequency and linewidth were studied. • The study was made by hysteresis loops, torque and microwave permeability. • Permalloy samples were separated according their

  5. Investigation of top electrode for PZT thick films based MEMS sensors

    DEFF Research Database (Denmark)

    Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

    2010-01-01

    In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

  6. Formulation and Characterization of Cu Doped ZnO Thick Films as LPG Gas Sensor

    Directory of Open Access Journals (Sweden)

    A. V. PATIL

    2010-12-01

    Full Text Available Thick films of pure and various concentrations (1 wt. %, 3 wt. %, 5 wt. %, 7 wt. % and 10 wt. % of Cu-doped ZnO were prepared on alumina substrates using a screen printing technique. These films were fired at a temperature of 700ºC for two hours in an air atmosphere. Morphological, compositional and structural properties of the samples were obtained using the scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDAX and X-ray diffraction techniques respectively. The LPG gas sensing properties of these thick films were investigated at different operating temperatures and LPG gas concentrations. The surface resistance of thick films decreases when exposed to LPG gas. The Cu doped films show significant sensitivity to LPG gas than pure ZnO film. 5 wt. % Cu-doped ZnO film was found to be more sensitive (87.3 % to LPG gas exposed at 300 oC than other doping concentrations with fast response and recovery time.

  7. Granular and layered ferroelectric–ferromagnetic thin-film nanocomposites as promising materials with high magnetotransmission effect

    Energy Technology Data Exchange (ETDEWEB)

    Akbashev, A.R. [Department of Materials Science, Moscow State University, 119992 Moscow (Russian Federation); Telegin, A.V., E-mail: telegin@imp.uran.ru [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620990 Ekaterinburg (Russian Federation); Kaul, A.R. [Department of Chemistry, Moscow State University, 119992 Moscow (Russian Federation); Sukhorukov, Yu.P. [M.N. Miheev Institute of Metal Physics of Ural Branch of RAS, 620990 Ekaterinburg (Russian Federation)

    2015-06-15

    Epitaxial thin films of granular and layered nanocomposites consisting of ferromagnetic perovskite Pr{sub 1–x}Sr{sub x}MnO{sub 3} and ferroelectric hexagonal LuMnO{sub 3} were grown on ZrO{sub 2}(Y{sub 2}O{sub 3}) substrates using metal-organic chemical vapor deposition (MOCVD). A self-organized growth of the granular composite took place in situ as a result of phase separation of the Pr–Sr–Lu–Mn–O system into the perovskite and hexagonal phases. Optical transmission measurements revealed a large negative magnetotransmission effect in the layered nanocomposite over a wide spectral and temperature range. The granular nanocomposite unexpectedly showed an even larger, but positive, magnetotransmission effect at room temperature. - Highlights: • Thin-film ferromagnetic–ferroelectric nanocomposites have been prepared by MOCVD. • Giant change of optical transparency of nanocomposites in magnetic field was detected. • Positive magnetotransmission in the granular nanocomposite was discovered in the IR. • Negative magnetotransmission in the layered nanocomposite was revealed in the IR. • Ferroelectric–ferromangetic nanocomposite is a promising material for optoelectronics.

  8. Granular and layered ferroelectric–ferromagnetic thin-film nanocomposites as promising materials with high magnetotransmission effect

    International Nuclear Information System (INIS)

    Akbashev, A.R.; Telegin, A.V.; Kaul, A.R.; Sukhorukov, Yu.P.

    2015-01-01

    Epitaxial thin films of granular and layered nanocomposites consisting of ferromagnetic perovskite Pr 1–x Sr x MnO 3 and ferroelectric hexagonal LuMnO 3 were grown on ZrO 2 (Y 2 O 3 ) substrates using metal-organic chemical vapor deposition (MOCVD). A self-organized growth of the granular composite took place in situ as a result of phase separation of the Pr–Sr–Lu–Mn–O system into the perovskite and hexagonal phases. Optical transmission measurements revealed a large negative magnetotransmission effect in the layered nanocomposite over a wide spectral and temperature range. The granular nanocomposite unexpectedly showed an even larger, but positive, magnetotransmission effect at room temperature. - Highlights: • Thin-film ferromagnetic–ferroelectric nanocomposites have been prepared by MOCVD. • Giant change of optical transparency of nanocomposites in magnetic field was detected. • Positive magnetotransmission in the granular nanocomposite was discovered in the IR. • Negative magnetotransmission in the layered nanocomposite was revealed in the IR. • Ferroelectric–ferromangetic nanocomposite is a promising material for optoelectronics

  9. Interaction domains in high performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, Tom; Khlopkov, Kirill; Schultz, Ludwig; Gutfleisch, Oliver [IFW Dresden, IMW, Dresden (Germany); Walther, Arno [Insitut Neel, CNRS-UJF, Grenoble (France); CEA Leti - MINATEC, Grenoble (France); Dempsey, Nora; Givord, Dominique [Insitut Neel, CNRS-UJF, Grenoble (France)

    2009-07-01

    Thick sputtered films (5-300 micron) of NdFeB have excellent hard magnetic properties which make them attractive for applications in micro-electro-mechanical systems (MEMS). A two step process consisting of triode sputtering and high temperature annealing produced films with energy densities approaching those of sintered NdFeB magnets. Magnetic force microscopy (MFM) using hard magnetic tips showed that the films deposited without substrate heating and at 300 C exhibited magnetic domains typical of low anisotropy materials. These films were amorphous in the as-deposited state. The film deposited at 500 C was crystalline and displaid hard magnetic properties. This was reflected in the magnetic microstructure which showed interaction domains typical of highly textured and high magnetic anisotropy materials with a grain size below or equal to the critical single-domain particle limit. With increasing substrate temperature, the domain patterns of the annealed films became coarser, indicating higher degrees of texture.

  10. Bio-interfaces--interaction of PLL/HA thick films with nanoparticles and microcapsules.

    Science.gov (United States)

    Skirtach, Andre G; Volodkin, Dmitry V; Möhwald, Helmuth

    2010-03-15

    The interaction of biocompatible, exponentially grown films composed of poly-L-lysine (PLL) and hyaluronic acid (HA) polymers with gold nanoparticles and microcapsules is studied. Both aggregated and non-aggregated nanoparticle states are achieved; desorption of PLL accounts for aggregation of nanoparticles. The presence of aggregates of gold nanoparticles on films enables remote activation by near-infrared irradiation due to local, nanometer confined heating. Thermally shrunk microcapsules, which are remarkably monodisperse upon preparation but gain polydispersity after months of storage, are also adsorbed onto films. PLL polymers desorbed from films interact with microcapsules introducing a charge imbalance which leads to an increase of the microcapsule size, thus films amplify this effect. Multifunctional, biocompatible, thick gel films with remote activation and release capabilities are targeted for cell cultures in biology and tissue engineering in medicine.

  11. Effect of cell thickness on the electrical and optical properties of thin film silicon solar cell

    Science.gov (United States)

    Zaki, A. A.; El-Amin, A. A.

    2017-12-01

    In this work Electrical and optical properties of silicon thin films with different thickness were measured. The thickness of the Si films varied from 100 to 800 μm. The optical properties of the cell were studied at different thickness. A maximum achievable current density (MACD) generated by a planar solar cell, was measured for different values of the cell thickness which was performed by using photovoltaic (PV) optics method. It was found that reducing the values of the cell thickness improves the open-circuit voltage (VOC) and the fill factor (FF) of the solar cell. The optical properties were measured for thin film Si (TF-Si) at different thickness by using the double beam UV-vis-NIR spectrophotometer in the wavelength range of 300-2000 nm. Some of optical parameters such as refractive index with dispersion relation, the dispersion energy, the oscillator energy, optical band gap energy were calculated by using the spectra for the TF-Si with different thickness.

  12. Nondestructive measurement of homoepitaxially grown GaN film thickness with Fourier transform infrared spectroscopy

    Science.gov (United States)

    Horikiri, Fumimasa; Narita, Yoshinobu; Yoshida, Takehiro

    2017-12-01

    In vertical devices containing GaN homoepitaxial layers on GaN substrates, the layer thickness is a key parameter that needs to be clarified before starting the device process. We applied Fourier transform infrared spectroscopy (FT-IR) to a homoepitaxially grown GaN film that consisted of an n--GaN layer. The estimated film thickness from the FT-IR spectrum agreed well with the results of cross-sectional scanning electron microscope cathodoluminescence images. This is the first report of nondestructive film thickness measurements for homoepitaxially grown GaN and indicates the applicability of FT-IR to the nondestructive inspection of vertical GaN power devices.

  13. Effects of rework on adhesion of Pb-In soldered gold thick films

    International Nuclear Information System (INIS)

    Gehman, R.W.; Becka, G.A.; Losure, J.A.

    1982-02-01

    The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

  14. X-ray fluorescence application (WDXRFS) for determining thin films thickness

    International Nuclear Information System (INIS)

    Scapin, Valdirene O.; Scapin, Marcos A.; Salvador, Vera L.R.; Lima, Nelson B. de; Mitani, Solange E.; Samad, Ricardo E.

    2002-01-01

    Establishment of a method for the quantitative determination of the thickness of a thin films nickel simple on glass substrate, using the technique of Wavelength Dispersion X-ray Fluorescence Spectrometry (WD-XRFS) and the method of fundamental parameters. The advantages of using this technique are: precision, high sensitivity, non destructive analysis. A RIGAKU X-ray fluorescence spectrometry was used, model RIX 3000, 1996 of the X-ray Fluorescence Laboratory, Chemistry and Environment Center of the Instituto de Pesquisas Energeticas e Nucleares - IPEN - CNEN/SP. Films were obtained through the process of Physical Vapor Deposition in the Thin Films Laboratory, Laser and Applications Center of the Instituto de Pesquisas Energeticas e Nucleares - IPEN - CNEN/SP. Samples were analyzed with thickness between 10-100 nm and the results were satisfactory when compared with the technique Physical Vapor Deposition and theoretical values by mathematical expression for the calculation of thicknesses. (author)

  15. Reaction products between Bi-Sr-Ca-Cu-oxide thick films and alumina substrates

    International Nuclear Information System (INIS)

    Alarco, J.A.; Ilushechkin, A.; Yamashita, T.; Bhargava, A.; Barry, J.; Mackinnon, I.D.R.

    1997-01-01

    The structure and composition of reaction products between Bi-Sr-Ca-Cu-oxide (BSCCO) thick films and alumina substrates have been characterized using a combination of electron diffraction, scanning electron microscopy and energy dispersive X-ray spectrometry (EDX). Sr and Ca are found to be the most reactive cations with alumina. Sr 4 Al 6 O 12 SO 4 is formed between the alumina substrates and BSCCO thick films prepared from paste with composition close to Bi-2212 (and Bi-2212+10 wt.% Ag). For paste with composition close to Bi(Pb)-2223 +20 wt.% Ag, a new phase with f.c.c. structure, lattice parameter about a=24.5 A and approximate composition Al 3 Sr 2 CaBi 2 CuO x has been identified in the interface region. Understanding and control of these reactions is essential for growth of high quality BSCCO thick films on alumina. (orig.)

  16. Development of an in-line X-ray reflectivity technique for metal film thickness measurement

    International Nuclear Information System (INIS)

    Windover, D.; Barnet, E.; Summers, J.; Gribbin, C.; Lu, T.-M.; Kumar, A.; Bakhru, H.; Lee, S.L.

    2001-01-01

    Non-destructive measurement of thin film (particularly metal film) thickness less than 10 nm has been a challenging task. In this work, we showed that it is possible to obtain the thickness of ultra-thin tantalum films within seconds using a fixed-angle, energy dispersive X-ray reflectivity technique by a conventional, low-energy X-ray copper or chromium source (20 kV/20 mA/400W) and using Parratt reflectivity modeling. We compared this fixed angle, energy dispersive result with more conventional fixed energy, angular dispersive reflectivity to establish the validity of the method and provide error estimates for fast thickness modeling. This X-ray technique is particularly useful for very thin diffusion barrier measurements in future microelectronics applications

  17. Low-temperature CO gas sensors based on Au/SnO{sub 2} thick film

    Energy Technology Data Exchange (ETDEWEB)

    Wang Shurong [Department of Chemistry, Nankai University, Tianjin 300071 (China); Zhao Yingqiang [Department of Chemistry, Nankai University, Tianjin 300071 (China); Huang Jing [Department of Chemistry, Nankai University, Tianjin 300071 (China); Wang Yan [Department of Chemistry, Nankai University, Tianjin 300071 (China); Ren Hongxia [Department of Chemistry, Nankai University, Tianjin 300071 (China); Wu Shihua [Department of Chemistry, Nankai University, Tianjin 300071 (China)]. E-mail: shrwang@nankai.edu.cn; Zhang Shoumin [Department of Chemistry, Nankai University, Tianjin 300071 (China); Huang Weiping [Department of Chemistry, Nankai University, Tianjin 300071 (China)

    2007-01-15

    A study on the low-temperature CO gas sensors based on Au/SnO{sub 2} thick film was reported. Au/SnO{sub 2} powders were prepared by a deposition-precipitation method. Thick films were fabricated from Au/SnO{sub 2} powders. X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy (XPS) analyses were carried out for investigation of morphology and crystalline structure. Au/SnO{sub 2} thick film sensors exhibited high sensitivity to CO gas at relatively low operating temperature (83-210 deg. C). We also reported the effect of the calcination temperature of Au/SnO{sub 2} on the CO gas sensing behavior. The optimal calcination temperature of Au/SnO{sub 2} was 300 deg. C.

  18. Critical slowing down in the two-dimensional Ising model measured using ferromagnetic ultrathin films

    Science.gov (United States)

    Dunlavy, M. J.; Venus, D.

    2005-04-01

    Power-law scaling of the relaxation time τ associated with critical slowing down has been experimentally measured in the dynamics of the magnetization of a bilayer of iron grown on top of a W(110) substrate using the complex magnetic ac susceptibility χ(T) . The observed value of the critical exponent for the slowing down above the Curie transition of this two-dimensional Ising ferromagnetic system is zν=2.09±0.06 (95% confidence), in agreement with most contemporary theories and simulations. Further analysis reveals that dynamical effects cause χ(T) to deviate from power-law scaling as the temperature is decreased towards Tc , whereas the saturation of the correlation length due to finite-size effects (on the order of 500 lattice spaces) limits the divergence of τ .

  19. Magnetic state dependent transient lateral photovoltaic effect in patterned ferromagnetic metal-oxide-semiconductor films

    Directory of Open Access Journals (Sweden)

    Isidoro Martinez

    2015-11-01

    Full Text Available We investigate the influence of an external magnetic field on the magnitude and dephasing of the transient lateral photovoltaic effect (T-LPE in lithographically patterned Co lines of widths of a few microns grown over naturally passivated p-type Si(100. The T-LPE peak-to-peak magnitude and dephasing, measured by lock-in or through the characteristic time of laser OFF exponential relaxation, exhibit a notable influence of the magnetization direction of the ferromagnetic overlayer. We show experimentally and by numerical simulations that the T-LPE magnitude is determined by the Co anisotropic magnetoresistance. On the other hand, the magnetic field dependence of the dephasing could be described by the influence of the Lorentz force acting perpendiculary to both the Co magnetization and the photocarrier drift directions. Our findings could stimulate the development of fast position sensitive detectors with magnetically tuned magnitude and phase responses.

  20. Hydrogen in hydrogenated amorphous silicon thick film and its relation to the photoresponse of the film in contact with molybdenum

    International Nuclear Information System (INIS)

    Sridhar, N.; Chung, D.D.L.

    1992-01-01

    This paper reports that hydrogenated amorphous silicon films of thickness 0.5-7 μm on molybdenum substrates were deposited from silane by dc glow discharge and studied by mass spectrometric observation of the evolution of hydrogen upon heating and correlating this information with the photoresponse. The films were found to contain two types of hydrogen, namely weak bonded hydrogen, which evolved at 365 degrees C and was the minority, and strongly bonded hydrogen, which evolved at 460-670 degrees C and was the majority. The proportion of strongly bonded hydrogen increased with increasing film thickness and with increasing substrate temperature during deposition. The total amount of hydrogen increased when the substrate temperature was decreased from 350 to 275 degrees C. The strongly bonded hydrogen resided throughout the thickness of the film, whereas the weakly bonded hydrogen resided near the film surface. The evolution of the strongly bonded hydrogen was diffusion controlled, with an activation energy of 1.6 eV. The strongly bonded hydrogen enhanced the photoresponse, whereas the weakly bonded hydrogen degraded the photoresponse

  1. Application of X-ray fluorescence (WDXRF): thickness and chemical composition determination of thin films

    International Nuclear Information System (INIS)

    Scapin, Valdirene de Oliveira.

    2004-01-01

    In this work a procedure is described for thickness and quantitative chemical composition of thin films by wavelength dispersion X-ray fluorescence (WDXRF) using Fundamental Parameters method. This method was validated according to quality assurance standard and applied sample Al, Cr, TiO2, Ni, ZrO2 (single thickness) and Ni/Cr (double thickness) on glass; Ni on steel and metallic zinc and TiO2 on metallic iron (single thickness), all the sample were prepared for physical deposition of vapor (PVD). The thickness had been compared with Absorption (FRX-A) and Rutherford Backscattering Spectrometry (RBS) methods; the result showed good efficiency of the fundamental parameters method. Sample structural characteristics analyzed by X ray diffraction (XRD) showed any influence in the thickness determinations. (author)

  2. Thickness dependent structural, magnetic and magneto-transport properties of epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Pawan, E-mail: p.kumar@krmangalam.edu.in [School of Basic and Applied Sciences, K. R. Mangalam University, Sohna Road, Gurgaon, Haryana 122103 (India); Singh, Hari Krishna, E-mail: hks65@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

    2016-05-06

    We report the thickness-dependent structural, magnetic and magneto-transport properties in epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films (10 to 300nm) prepared by DC magnetron sputtering technique on single crystalline (001) oriented substrate LaAlO{sub 3}. X-ray diffraction pattern reveals the epitaxial growth of all the films and the out-of-plane lattice parameter of films were found to increase with thickness. As thickness of the film increases the paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature (T{sub C}), charge ordered transition temperature (T{sub CO}) and magnetic moment were found to increase with a strong bifurcation in ZFC-FC magnetization. The asymmetry in the coercivity seen in field dependent magnetization loops (M-H loops) suggests the presence of exchange bias (EB) effect. While temperature dependent resistivity of films show the semiconducting nature for thickness 10-200nm in temperature range from 5-300K, the film of thickness 300nm shows the insulator to metal transition with transition temperature (T{sub IM}) at 175K. Temperature dependent low field magnetoresistance (LFMR) measured at 4kOe found to decrease with thickness and for high field magnetoresistance (HFMR) at 40kOe and 60kOe also show similar dependence and a crossover at intermediate temperature range in the magnitude of MR between 10nm and 200nm films at constant field. Colossal increase in magnetoresistance observed for 10nm film at low temperature.

  3. Interaction domains in high-performance NdFeB thick films

    Energy Technology Data Exchange (ETDEWEB)

    Woodcock, T.G. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)], E-mail: t.woodcock@ifw-dresden.de; Khlopkov, K. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany); Walther, A. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); CEA Leti - MINATEC, 17 rue des Martyrs, 38054 Grenoble (France); Dempsey, N.M.; Givord, D. [Insitut Neel, CNRS-UJF, 25 avenue de Martyrs, 38042 Grenoble (France); Schultz, L.; Gutfleisch, O. [IFW Dresden, Institute for Metallic Materials, P.O. Box 270116, D-01171 Dresden (Germany)

    2009-05-15

    The magnetic domain structure in sputtered NdFeB thick films has been imaged by magnetic force microscopy. The local texture of the films was investigated by electron backscatter diffraction. The average misorientation of the grains was shown to decrease with increasing substrate temperature during deposition. Interaction domains were observed and are discussed with reference (i) to the sample grain size compared to the single domain particle size and (ii) to sample texture.

  4. Thickness measurement of aluminum, titanium, titanium silicide, and tungsten silicide films by x-ray fluorescence

    International Nuclear Information System (INIS)

    Ernst, S.; Lee, C.O.; Lee, J.J.

    1988-01-01

    X-ray fluorescence (XRF) has received a great deal of attention in the last few years as a quantitative means of determining both the stoichiometry and thickness of many different kinds of films. Examples include Ag and Cu films on mica substrates, Sn-Pb alloys on steel substrates, Al-Ti multilayers on Cu substrates and oxide films on silicon substrates. In XRF the sample is irradiated with x-rays which in turn cause x-rays to be given off by the sample. These x-rays that are given off by the sample can then be analyzed both for energy and intensity. The energy of the x-rays is characteristic of the elemental makeup of the sample and the intensity of the x-rays is dependent on how much of the particular element is present. The intensity then can be related to the thickness of a film if the stoichiometry of the film can be assumed constant. With the increased interest in silicides and more recently, the self-aligned silicide (salicide) process (8-10) for VLSI applications, in-line process monitoring of silicide film thickness has become important to integrated circuit manufacturing. In this study, the number of x-ray photons given of by Al, Ti, titanium silicide, and tungsten silicide films on silicon-based substrates was quantified so that a film thickness for an unknown sample could then be determined easily. In addition, XRF is a more accurate technique, limited principally by the accuracy technique, limited principally by the accuracy of the reference used and the amount of time the x-ray photons are counted

  5. Measurements of liquid film thickness, concentration, and temperature of aqueous urea solution by NIR absorption spectroscopy

    Science.gov (United States)

    Pan, R.; Jeffries, J. B.; Dreier, T.; Schulz, C.

    2016-01-01

    A multi-wavelength near-infrared (NIR) diode laser absorption sensor has been developed and demonstrated for real-time monitoring of the thickness, solute concentration, and temperature of thin films of urea-water solutions. The sensor monitors the transmittance of three near-infrared diode lasers through the thin liquid film. Film thickness, urea mass fraction, and liquid temperature were determined from measured transmittance ratios of suitable combinations of lasers. Available laser wavelengths were selected depending on the variation of the NIR absorption spectrum of the solution with temperature and solute concentration. The spectral database was measured by a Fourier transform infrared spectrometer in the range 5500-8000 cm-1 for urea solutions between 5 and 40 wt% and temperatures between 298 and 338 K. A prototype sensor was constructed, and the sensor concept was first validated with measurements using a calibration cell providing liquid layers of variable thickness (200-1500 µm), urea mass fraction (5-40 wt%) and temperature (298-318 K). Temporal variations of film thickness and urea concentration were captured during the constant-temperature evaporation of a liquid film deposited on an optically polished heated quartz flat.

  6. Effect of diffusion on percolation threshold in thick-film resistors

    International Nuclear Information System (INIS)

    Abdurakhmanov, G.

    2009-01-01

    Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

  7. Thickness and structure of the water film deposited from vapour on calcite surfaces

    DEFF Research Database (Denmark)

    Bohr, Jakob; Wogelius, Roy A.; Morris, Peter M.

    2010-01-01

    Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from......Synchrotron X-ray reflectivity (SXR) was used to measure the thickness of the water film that adsorbs on a {10¯14} cleavage surface of calcite (CaCO3) in a sample chamber where relative humidity could be controlled within the range from...

  8. Effects of thickness on the statistical properties of the Barkhausen noise in amorphous films

    International Nuclear Information System (INIS)

    Santi, L.; Bohn, F.; Viegas, A.D.C.; Durin, G.; Magni, A.; Bonin, R.; Zapperi, S.; Sommer, R.L.

    2006-01-01

    The statistical properties of the Barkhausen noise (BN) in thin amorphous films are studied as a function of both the nominal composition and the thickness. BN was observed in single films with nominal compositions Fe 73.5 Cu 1 Nb 3 Si 22.5-x B x (with x=4 and 9) in the thickness range 20nm-5μm. The distributions of Barkhausen jump sizes and duration times were obtained and fitted to power laws with critical exponents τ=1.25+/-0.05 and α=1.60+/-0.05, respectively

  9. Diode laser-based standoff absorption measurement of water film thickness in retro-reflection

    Science.gov (United States)

    Pan, R.; Brocksieper, C.; Jeffries, J. B.; Dreier, T.; Schulz, C.

    2016-09-01

    A dual-wavelength diode laser-based absorption sensor for standoff point measurements of water film thickness on an opaque surface is presented. The sensor consists of a diode laser source, a foil as backscattering target, and off-axis paraboloids for collecting the fraction of the laser radiation transmitted through the liquid layer via retro-reflection. Laser wavelengths in the near infrared at 1412 and 1353 nm are used where the temperature dependence of the liquid water absorption cross section is known. The lasers are fiber coupled and the detection of the retro-reflected light was accomplished through a multimode fiber and a single photodiode using time-division multiplexing. The water film thickness at a given temperature was determined from measured transmittance ratios at the two laser wavelengths. The sensor concept was first validated with measurement using a temperature-controlled calibration cell providing liquid layers of variable and known thickness between 100 and 1000 µm. Subsequently, the sensor was demonstrated successfully during recording the time-varying thickness of evaporating water films at fixed temperatures. The film thickness was recorded as a function of time at three temperatures down to 50 µm.

  10. Dielectric response of fully and partially depleted ferroelectric thin films and inversion of the thickness effect

    International Nuclear Information System (INIS)

    Misirlioglu, I B; Yildiz, M

    2013-01-01

    We study the effect of full and partial depletion on the dielectric response characteristics of ferroelectric thin films with impurities via a computational approach. Using a thermodynamic approach along with the fundamental equations for semiconductors, we show that films with partial depletion display unique features and an enhanced dielectric response compared with those fully depleted. We find that the capacitance peak at switching can be significantly suppressed in the case of high impurity densities (>10 25 m −3 ) with relatively low ionization energy, of the order of 0.5 eV. For conserved number of species in films, electromigration of ionized impurities at room temperature is negligible and has nearly no effect on the dielectric response. In films with high impurity density, the dielectric response at zero bias is enhanced with respect to charge-free films or those with relatively low impurity density ( 24 m −3 ). We demonstrate that partially depleted films should be expected to exhibit peculiar capacitance–voltage characteristics at low and high bias and that the thickness effect probed in experiments in ferroelectric thin films could be entirely inverted in thin films with depletion charges where a higher dielectric response can be measured in thicker films. Therefore, depletion charge densities in ferroelectric thin films should be estimated before size-effect-related studies. Finally, we noted that these findings are in good qualitative agreement with dielectric measurements carried out on PbZr x Ti 1−x O 3 . (paper)

  11. Online terahertz thickness measurement in films and coatings

    Science.gov (United States)

    Duling, Irl N.; White, Jeffrey S.

    2017-02-01

    Pulsed terahertz systems are currently being deployed for online process control and quality control of multi-layered products for use in the building products and aerospace industries. While many laboratory applications of terahertz can allow waveforms to be acquired at rates of 1 - 40 Hz, online applications require measurement rates of in excess of 100Hz. The existing technologies of thickness measurement (nuclear, x-ray, or laser gauges) have rates between 100 and 1000 Hz. At these rates, the single waveform bandwidth must still remain at 2THz or above to allow thinner layers to be measured. In the applications where terahertz can provide unique capability (e.g. multi-layer thickness, delamination, density) long-term stability must be guaranteed within the tolerance required by the measurement. This can mean multi-day stability of less than a micron. The software that runs on these systems must be flexible enough to allow multiple product configurations, while maintaining the simplicity required by plant operators. The final requirement is to have systems that can withstand the environmental conditions of the measurement. This might mean qualification in explosive environments, or operation in hot, wet or dusty environments. All of these requirements can put restrictions on not only the voltage of electronic circuitry used, but also the wavelength and optical power used for the transmitter and receiver. The application of terahertz systems to online process control presents unique challenges that not only effect the physical design of the system, but can also effect the choices made on the terahertz technology itself.

  12. Nanoporous nickel oxide thin films and its improved electrochromic performance: Effect of thickness

    Science.gov (United States)

    Dalavi, D. S.; Suryavanshi, M. J.; Patil, D. S.; Mali, S. S.; Moholkar, A. V.; Kalagi, S. S.; Vanalkar, S. A.; Kang, S. R.; Kim, J. H.; Patil, P. S.

    2011-01-01

    Electrochromic properties of chemically bath deposited nanoporous NiO thin films were investigated as a function of film thickness using Ni sulphate precursor, aqueous ammonia and potassium persulphate as complexing and oxidizing agents respectively. The films were characterized for their structural, morphological, optical and electrochromic properties using X-ray diffraction, scanning electron microscopy, FT-IR spectroscopy, cyclic voltammetry, chronoamperometry and optical transmittance studies. X-ray diffraction patterns show that the films are polycrystalline, consisting of NiO cubic phase. Infrared spectroscopy results show the presence of free hydroxyl ion and water in NiO thin films. SEM micrographs revealed nanoporous nature composed of interconnected nanoporous network, forming well defined 3D nano envelopes. The optical band gap energy was found to be decreased from 3.22 to 2.80 eV with increasing film thickness. The electrochromic properties of all the films were investigated in aqueous (KOH) and non aqueous (LiClO4-PC) electrolyte by means of cyclic voltammetry (CV), chronocoulometry (CC) and optical studies. The transmittance modulations or optical density differences during the coloring/bleaching process were found to be increased with the film thickness. This increment in optical differences led to an increase in coloration efficiency (CE) to about 95 cm2/C, which is two times more than that observed in KOH and response time of 2.9 s for bleaching (reduction) and 3.5 s for coloration (oxidation) observed for the film deposited at 60 min with excellent electrochemical stability up to 3000 c/b cycles in LiClO4-PC electrolyte.

  13. Nanoporous nickel oxide thin films and its improved electrochromic performance: Effect of thickness

    Energy Technology Data Exchange (ETDEWEB)

    Dalavi, D.S.; Suryavanshi, M.J.; Patil, D.S.; Mali, S.S. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India); Moholkar, A.V. [Department of Materials Science and Engineering, Chonnam National University (Korea, Republic of); Kalagi, S.S.; Vanalkar, S.A. [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India); Kang, S.R.; Kim, J.H. [Department of Materials Science and Engineering, Chonnam National University (Korea, Republic of); Patil, P.S., E-mail: patilps_2000@yahoo.com [Thin Films Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, Maharashtra (India)

    2011-01-15

    Electrochromic properties of chemically bath deposited nanoporous NiO thin films were investigated as a function of film thickness using Ni sulphate precursor, aqueous ammonia and potassium persulphate as complexing and oxidizing agents respectively. The films were characterized for their structural, morphological, optical and electrochromic properties using X-ray diffraction, scanning electron microscopy, FT-IR spectroscopy, cyclic voltammetry, chronoamperometry and optical transmittance studies. X-ray diffraction patterns show that the films are polycrystalline, consisting of NiO cubic phase. Infrared spectroscopy results show the presence of free hydroxyl ion and water in NiO thin films. SEM micrographs revealed nanoporous nature composed of interconnected nanoporous network, forming well defined 3D nano envelopes. The optical band gap energy was found to be decreased from 3.22 to 2.80 eV with increasing film thickness. The electrochromic properties of all the films were investigated in aqueous (KOH) and non aqueous (LiClO{sub 4}-PC) electrolyte by means of cyclic voltammetry (CV), chronocoulometry (CC) and optical studies. The transmittance modulations or optical density differences during the coloring/bleaching process were found to be increased with the film thickness. This increment in optical differences led to an increase in coloration efficiency (CE) to about 95 cm{sup 2}/C, which is two times more than that observed in KOH and response time of 2.9 s for bleaching (reduction) and 3.5 s for coloration (oxidation) observed for the film deposited at 60 min with excellent electrochemical stability up to 3000 c/b cycles in LiClO{sub 4}-PC electrolyte.

  14. Preparation and properties of triple perovskite La3-3xCa1+3xMn3O10 ferromagnetic thin films

    International Nuclear Information System (INIS)

    Asano, H.; Hayakawa, J.; Matsui, M.

    1997-01-01

    The ferromagnetic compound La 3-3x Ca 1+3x Mn 3 O 10 with a triple perovskite structure can be successfully synthesized by using a thin-film growth method. Sputtered a-axis thin films with x=0.3 have been examined with respect to their magnetotransport properties. For the triple perovskite compound, we have observed the features, including the enhanced magnetoresistene (MR) effect and the characteristic low-temperature MR effect resulting from intragrain spin-polarized tunneling, which were reported for the double perovskite manganites. A comparison of the magnitude of these features in triple and double perovskite manganites suggests that the features are actually determined by the c-axis Mn endash O bond configuration in a layered-perovskite ferromagnet. copyright 1997 American Institute of Physics

  15. Correlation between electrical transport, microstructure and room temperature ferromagnetism in 200 keV Ni{sup 2+} ion implanted zinc oxide (ZnO) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Joshi, B. [Gautam Buddha University, Department of Applied Sciences, Greater Noida (India); Ghosh, S.; Srivastava, P. [Indian Institute of Technology Delhi, Nanostech Laboratory, New Delhi (India); Kumar, P.; Kanjilal, D. [Aruna Asaf Ali Marg, Inter University Accelerator Centre, New Delhi (India)

    2012-05-15

    We report variable temperature resistivity measurements and mechanisms related to electrical conduction in 200 keV Ni{sup 2+} ion implanted ZnO thin films deposited by vapor phase transport. The dc electrical resistivity versus temperature curves show that all polycrystalline ZnO films are semiconducting in nature. In the room temperature range they exhibit band conduction and conduction due to thermionic emission of electrons from grain boundaries present in the polycrystalline films. In the low temperature range, nearest neighbor hopping (NNH) and variable range hopping (VRH) conduction are observed. The detailed conduction mechanism of these films and the effects of grain boundary (GB) barriers on the electrical conduction process are discussed. An attempt is made to correlate electrical conduction behavior and previously observed room temperature ferromagnetism of these films. (orig.)

  16. Performances of screen-printing silver thick films: Rheology, morphology, mechanical and electronic properties

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Jung-Shiun; Liang, Jau-En; Yi, Han-Liou [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China); Chen, Shu-Hua [China Steel Corporation, Kaohsiung City 806, Taiwan, ROC (China); Hua, Chi-Chung, E-mail: chmcch@ccu.edu.tw [Department of Chemical Engineering, National Chung Cheng University, Chia Yi 621, Taiwan, ROC (China)

    2016-06-15

    Numerous recent applications with inorganic solar cells and energy storage electrodes make use of silver pastes through processes like screen-printing to fabricate fine conductive lines for electron conducting purpose. To date, however, there have been few studies that systematically revealed the properties of the silver paste in relation to the mechanical and electronic performances of screen-printing thick films. In this work, the rheological properties of a series of model silver pastes made of silver powders of varying size (0.9, 1.3, and 1.5 μm) and shape (irregular and spherical) were explored, and the results were systematically correlated with the morphological feature (scanning electron microscopy, SEM) and mechanical (peeling test) and electronic (transmission line method, TLM) performances of screen-printing dried or sintered thick films. We provided evidence of generally intimate correlations between the powder dispersion state in silver pastes—which is shown to be well captured by the rheological protocols employed herein—and the performances of screen-printing thick films. Overall, this study suggests the powder dispersion state and the associated phase behavior of a paste sample can significantly impact not only the morphological and electronic but also mechanical performances of screen-printing thick films, and, in future perspectives, a proper combination of silver powders of different sizes and even shapes could help reconcile quality and stability of an optimum silver paste. - Highlights: • Powder dispersion correlates well with screen-printing thick film performances. • Rheological fingerprints can be utilized to fathom the powder dispersion state. • Good polymer-powder interactions in the paste ensure good powder dispersion. • Time-dependent gel-like viscoelastic features are found with optimum silver pastes. • The size and shape of functional powder affect the dispersion and film performances.

  17. Gas Sensing Properties of Pure and Cr Activated WO3 Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    V. B. GAIKWAD

    2010-09-01

    Full Text Available Thick films of WO3 (Tungsten Oxide were prepared by screen-printing techniques. The surfaces of the films were modified by dipping them into an aqueous solution of Chromium Oxide (CrO3 for different intervals of time, followed by firing at 550 oC for 30 min. The gas sensing performance of the pure and Cr2O3-modified films was tested for various gases at different temperatures. The unmodified films showed response to H2S, ethanol and cigar smoke. However Cr2O3- modified films suppresses gas sensing response to all gases except H2S. The surface modification, using dipping process, altered the adsorbate-adsorbent interactions, which gave the specific selectivity and enhanced sensitivity to H2S gas. The gas response, selectivity, thermal stability and recovery time of the sensor were measured and presented. The role played by surface chromium species to improve gas sensing performance is discussed.

  18. Study of thin film thickness measurement based on white light interference

    Science.gov (United States)

    Zheng, Yuanbo; Chu, Chunxiao; Wang, Xia

    2017-02-01

    One method for measuring thin film thickness was proposed in this paper, which based on white light interference. One parallel flat crystal was used to be the standard glass, and put another glass on it, to form one air wedge between them. The reflectance spectrum of two beams interference was measured by one spectrometer. By fitting the reflectance spectrum, wave numbers corresponding to every peak can be found, then using two beam interference theory, the air gap thickness at light incident point can be fitted. By measuring the air gap thickness at different positions, the flatness of measured surface also can be analyzed.

  19. Density-functional study of the CO adsorption on the ferromagnetic fcc Co(001) film surface

    Czech Academy of Sciences Publication Activity Database

    Pick, Štěpán

    2010-01-01

    Roč. 604, 3-4 (2010), s. 265-268 ISSN 0039-6028 Institutional research plan: CEZ:AV0Z40400503 Keywords : Density functional calculations * chemisorption * magnetic films Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.010, year: 2010

  20. Thickness Dependence of Switching Behavior in Ferroelectric BiFeO3 Thin Films: A Phase-Field Simulation

    Directory of Open Access Journals (Sweden)

    Guoping Cao

    2017-11-01

    Full Text Available A phase-field approach to the analysis of the thickness effects in electric-field-induced domain switching in BiFeO3 thin films has been formulated. Time evolutions of domain switching percentage for films with different thicknesses were explored to reveal the primary switching path and its dependence on film thickness. In addition, hysteresis loop for these films were calculated to obtain their coercive fields. Results show a nonlinear thickness dependence of coercive field for ultrathin films. A parametric study of the interactions between film thickness, coercive field, current-voltage (I-V response, and polarization switching behavior is herein discussed, which could provide physical insights into materials engineering.

  1. Thickness-dependent multiferroic behavior of BiFe0.75Cr0.25O3 films over Pt(111)/Ti/SiO2/Si substrate

    Science.gov (United States)

    William, R. V.; Sivaprakash, P.; Marikani, A.; Reddy, V. Raghavendra; Arumugam, S.

    2018-02-01

    We present here the experimental results of BiFe0.75Cr0.25O3 (BFCO) thin film deposited by sol-gel spin coating technique directly on Pt(111)/Ti/SiO2/Si substrate at different thicknesses. The crystal structure of BFCO has been investigated using X-ray diffraction which acts as a double perovskite structure with high crystallinity obtained at 400 °C. Further microscopic studies such as scanning electron microscope (SEM) with EDAX, transmission electron microscope (TEM) were also used in identifying the grain size and particle distribution over Pt (111) substrate. Atomic force microscopy (AFM) on the films at a different thickness (- 80 to - 250 nm) reveals that the surface roughness and other amplitude parameters increases with the increase in thickness signifying an increase of grain size with thickness. Increase in grain size and substrate clamping effect between the BFCO film and the substrate induces change in ferroelectric polarization and dielectric properties in relation to thickness effect. Similarly, decrease in magnetization from 9.241 emu/cm3 (- 80 nm) to 5.7791 emu/cm3 (- 250 nm) is attributed to the formation of anti-sites and anti-phase boundaries in the films. In addition, temperature dependence of magnetization reveals ferromagnetic super-exchange interaction of BFCO which is unlike the spin structure of antiferromagnetic BiFeO3.

  2. Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

    Energy Technology Data Exchange (ETDEWEB)

    Pasanai, K., E-mail: krisakronmsu@gmail.com

    2017-01-15

    A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

  3. Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

    DEFF Research Database (Denmark)

    Pryds, N.; Christensen, Bo Toftmann; Bilde-Sørensen, Jørgen

    2006-01-01

    Films of yuria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive Xray spectrome......Films of yuria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive Xray...

  4. The influence of thickness on memory characteristic based on nonvolatile tuning behavior in poly(N-vinylcarbazole) films

    International Nuclear Information System (INIS)

    Sun, Yanmei; Ai, Chunpeng; Lu, Junguo; Li, Lei; Wen, Dianzhong; Bai, Xuduo

    2016-01-01

    The memory characteristic based on nonvolatile tuning behavior in indium tin oxide/poly(N-vinylcarbazole)/aluminum (ITO/PVK/Al) was investigated, the different memory behaviors were first observed in PVK film as the film thickness changing. By control of PVK film thickness with different spinning speeds, the nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned in a controlled manner. Obviously different nonvolatile behaviors, such as (i) flash memory behavior and (ii) write-once-read-many times (WORM) memory behavior are from the current–voltage (I–V) characteristics of the PVK films. The results suggest that the film thickness plays a key part in determining the memory type of the PVK. - Highlights: • The different memory behaviors were observed in PVK film. • The nonvolatile behavior of ITO/PVK/Al sandwich structure can be tuned. • The film thickness plays a key part in determining the memory type of the PVK.

  5. Film thickness effects in the CoSi1-xGex solid phase reaction

    International Nuclear Information System (INIS)

    Boyanov, B.I.; Goeller, P.T.; Sayers, D.E.; Nemanich, R.J.

    1998-01-01

    The thickness dependence of the reaction of cobalt with epitaxial silicon - germanium alloys (Si 1-x Ge x ) has been studied. The reaction products of Co with (100)-oriented Si 0.79 Ge 0.21 after annealing at 800 degree C depended on the thickness of the Co film. Complete conversion to CoSi 2 occurred only when the thickness of the Co layer exceeded 350 Angstrom. Interface reactions with Co layers thinner than 50 Angstrom resulted in CoSi formation, while a mixture of CoSi and CoSi 2 was formed at intermediate thicknesses. X-ray diffraction and extended x-ray absorption fine structure measurements indicated no measurable incorporation of Ge had occurred in either the CoSi or CoSi 2 . The threshold thickness for nucleation of CoSi 2 on (100)-oriented Si 1-x Ge x was determined in the range 0≤x≤0.25. The threshold thickness increased superlinearly with the Ge concentration x, and did not depend on the doping of the Si(100) substrate or the strain state of the Si 1-x Ge x film. The observed thickness effect was attributed to preferential Co - Si bonding in the reaction zone and the energy cost of Ge segregation, which accompanies the formation of CoSi and CoSi 2 during the reaction of Co with Si 1-x Ge x . copyright 1998 American Institute of Physics

  6. Full-field optical thickness profilometry of semitransparent thin films with transmission densitometry

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Jay; Harris, Tequila

    2010-05-20

    A novel bidirectional thickness profilometer based on transmission densitometry was designed to measure the localized thickness of semitransparent films on a dynamic manufacturing line. The densitometer model shows that, for materials with extinction coefficients between 0.3 and 2.9 D/mm, 100-500 {mu}m measurements can be recorded with less than {+-}5% error at more than 10,000 locations in real time. As a demonstration application, the thickness profiles of 75 mmx100 mm regions of polymer electrolyte membrane (PEM) were determined by converting the optical density of the sample to thickness with the Beer-Lambert law. The PEM extinction coefficient was determined to be 1.4 D/mm, with an average thickness error of 4.7%.

  7. Thin-film thickness measurement using x-ray peak ratioing in the scanning electron microscope

    International Nuclear Information System (INIS)

    Elliott, N.E.; Anderson, W.E.; Archuleta, T.A.; Stupin, D.M.

    1981-01-01

    The procedure used to measure laser target film thickness using a scanning electron microscope is summarized. This method is generally applicable to any coating on any substrate as long as the electron energy is sufficient to penetrate the coating and the substrate produces an x-ray signal which can pass back through the coating and be detected

  8. Thick film titania on glass supports for vapour phase photocatalytic degradation of toluene, acetone, and ethanol

    Czech Academy of Sciences Publication Activity Database

    Neti, R.N.; Parmar, G.R.; Bakardjieva, Snejana; Šubrt, Jan

    2010-01-01

    Roč. 163, č. 3 (2010), s. 219-229 ISSN 1385-8947 Institutional research plan: CEZ:AV0Z40320502 Keywords : titania photocatalyst * thick films * glass support Subject RIV: CA - Inorganic Chemistry Impact factor: 3.074, year: 2010

  9. Ethanol gas sensing properties of Al2 O3 -doped ZnO thick film ...

    Indian Academy of Sciences (India)

    WINTEC

    -doped ZnO thick film resistors. D R PATIL, L A PATIL* and D P AMALNERKAR. †. Materials Research Lab, Pratap College, Amalner 425 401, India. †. Centre for Materials for Electronics Technology, Pune 411 008, India. MS received 13 July 2007. Abstract. The characterization and ethanol gas sensing properties of ...

  10. Microstructural Studies of Ni-P Thick Film Resistor Temperature Sensors

    Directory of Open Access Journals (Sweden)

    Barbara Holodnik

    1986-01-01

    Full Text Available Thick Ni-P films have been widely investigated at our Institute. This article tends to visualize by use of various microscopic methods how the growth and sintering of individual conducting grains, results in the formation of nickel dendrites responsible for the metallic character of electrical conduction.

  11. Gas sensing properties of Cu and Cr activated BST thick films

    Indian Academy of Sciences (India)

    H2S gas sensing properties of BST ((Ba0.67Sr0.33)TiO3) thick films are reported here for the first time. BST ceramic powder was prepared by mechanochemical ... of activators on H2S gas sensing were discussed. The sensitivity, selectivity, stability, response and recovery time of the sensor were measured and presented.

  12. Thick-Film and LTCC Passive Components for High-Temperature Electronics

    Directory of Open Access Journals (Sweden)

    A. Dziedzic

    2013-04-01

    Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

  13. Equivalent-circuit model for the thickness-shear mode resonator with a viscoelastic film near film resonance.

    Science.gov (United States)

    Martin, S J; Bandey, H L; Cernosek, R W; Hillman, A R; Brown, M J

    2000-01-01

    We derive a lumped-element, equivalent-circuit model for the thickness-shear mode (TSM) resonator with a viscoelastic film. This modified Butterworth-Van Dyke model includes in the motional branch a series LCR resonator, representing the quartz resonance, and a parallel LCR resonator, representing the film resonance. This model is valid in the vicinity of film resonance, which occurs when the acoustic phase shift across the film is an odd multiple of pi/2 rad. For low-loss films, this model accurately predicts the frequency changes and damping that arise at resonance and is a reasonable approximation away from resonance. Elements of the parallel LCR resonator are explicitly related to film properties and can be interpreted in terms of elastic energy storage and viscous power dissipation. The model leads to a simple graphical interpretation of the coupling between the quartz and film resonances and facilitates understanding of the resulting responses. These responses are compared with predictions from the transmission-line and Sauerbrey models.

  14. Laser-based diagnostics for the measurement of liquid water film thickness.

    Science.gov (United States)

    Greszik, Daniel; Yang, Huinan; Dreier, Thomas; Schulz, Christof

    2011-02-01

    Three different diagnostic techniques are investigated for measurement of the thickness of liquid water films deposited on a transparent quartz plate. The methods are based on laser-induced fluorescence (LIF) from low concentrations of a dissolved tracer substance and spontaneous Raman scattering of liquid water, respectively, both excited with 266 nm of radiation, and diode laser absorption spectroscopy (DLAS) in the near-infrared spectral region. Signal intensities are calibrated using liquid layers of known thickness between 0 and 1000 μm. When applied to evaporating liquid water films, the thickness values derived from the direct DLAS and Raman scattering measurements correlate well with each other as a function of time after the start of data recording, while the LIF signal derived thickness values decrease faster with time due to selective tracer evaporation from the liquid. The simultaneous application of the LIF with a tracer-free detection technique can serve as an in situ reference for quantitative film thickness measurements.

  15. Method for rapid, controllable growth and thickness, of epitaxial silicon films

    Science.gov (United States)

    Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

    2009-10-13

    A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

  16. Experimental Comparison of the Behavior between Base Oil and Grease Starvation Based on Inlet Film Thickness

    Directory of Open Access Journals (Sweden)

    D. Kostal

    2017-03-01

    Full Text Available This paper deals with the experimental study of an elastohydrodynamic contact under conditions of insufficient lubricant supply. Starvation level of this type of the contact may be experimentally determined based on the position of the meniscus, but this way can't determine all levels of starvation. Consequent development in the field of tribology achieved theoretical model that can determine all levels of starvation by dependency on the thickness of the lubricant film entering the contact, but it is difficult for experimental verification. The main goal of this work is an experimental study and description of the behavior of the elastohydrodynamic contact with controlled thickness of the lubricant film at the contact input. Contact was lubricated by the base oil and the grease and compared. Results were surprising because the only differences between oil and grease were observed for more viscous lubricants at thicker film layer entering to the contact.

  17. Calculations of Exchange Bias in Thin Films with Ferromagnetic/Antiferromagnetic Interfaces

    Science.gov (United States)

    Koon, N. C.

    1997-06-01

    A microscopic explanation of exchange bias in thin films with compensated ferro/antiferromagnetic interfaces is presented. Full micromagnetic calculations show the interfacial exchange coupling to be relatively strong with a perpendicular orientation between the ferro/antiferromagnetic axis directions, similar to the classic ``spin-flop'' state in bulk antiferromagnets. With reasonable parameters the calculations predict bias fields comparable to those observed and provide a possible explanation for both anomalous high field rotational hysteresis and recently discovered ``positive'' exchange bias.

  18. Thickness dependence of polydopamine thin films on detection sensitivity of surface plasmon-enhanced fluorescence biosensors

    Science.gov (United States)

    Toma, Mana; Tawa, Keiko

    2018-03-01

    A bioinspired polydopamine (PDA) coating is a good candidate for the rapid and cheap chemical modification of biosensor surfaces. Herein, we report the effect of PDA thickness on the detection sensitivity of a fluorescence biosensor utilizing surface plasmon-enhanced fluorescence. The thickness of PDA films was tuned by the incubation time of the dopamine solution and varied from 1 to 17 nm. The detection sensitivity was evaluated as the limit of detection (LOD) of a fluorescently labelled target analyte by a model immunoassay. The LOD was determined to be 1.6 pM for the thickest PDA film and was improved to 1.0 pM by reducing the thickness to the range from 1 to 5 nm, corresponding to the incubation time of 10 to 60 min. The experimental results indicate that the PDA coating is suitable for the surface functionalization of biosensors in mass production as it does not require precise control of the incubation time.

  19. Film thickness degradation of Au/GaN Schottky contact characteristics

    International Nuclear Information System (INIS)

    Wang, K.; Wang, R.X.; Fung, S.; Beling, C.D.; Chen, X.D.; Huang, Y.; Li, S.; Xu, S.J.; Gong, M.

    2005-01-01

    Electrical characteristics of Au/n-GaN Schottky contacts with different Au film thicknesses up to 1300 A, have been investigated using current-voltage (I-V) and capacitance-voltage (C-V) techniques. Results show a steady decrease in the quality of the Schottky diodes for increasing Au film thickness. I-V measurements indicate that thin ( 500 A). Depth profiling Auger electron spectroscopy (AES) shows that the width of the Au/GaN junction interface increases with increasing Au thickness, suggesting considerable inter-mixing of Au, Ga and N. The results have been interpreted in terms of Ga out-diffusion from the GaN giving rise to gallium vacancies that in turn act as sites for electron-hole pair generation within the depletion region. The study supports the recent suggestion that gallium vacancies associated with threaded dislocations are playing an important role in junction breakdown

  20. Behavior of resin-based endodontic sealer cements in thin and thick films.

    Science.gov (United States)

    Pane, Epita S; Palamara, Joseph E A; Messer, Harold H

    2012-09-01

    For root canal fillings, a thin layer of sealer cement is generally recommended. However, with resin-based sealers, lower bond strength to dentin has been shown in thin layers compared to thick, contrary to typical behavior of adhesive layers between two adherents. The aim of this study was to evaluate tensile and shear bond strength of thin and thick films of three resin-based sealers (one epoxy-based and two methacrylate-based) materials and to investigate corner effects of one methacrylate-based resin sealer. Freshly mixed sealer cements were placed between metal-to-metal surfaces of plano-parallel stainless steel aligned rods with diameter 4.7 mm. Ten samples were prepared for each type, thickness (0.1 and 1.0 mm) of sealer and test. Tensile and shear strengths were measured after 48 h for the methacrylate-based materials and after 7 days for the epoxy-based material using a universal testing machine at a crosshead speed of 1mm/min. Corner effects were investigated using one methacrylate-based resin material. Film thickness had a highly significant influence on both tensile and shear strengths. For methacrylate resin-based sealers, thin films had higher bond strength than thick (ptensile and shear bond strength). With the epoxy-based sealer either no difference (shear) or lower bond strength in thin films (tensile; ptensile bond strength results. The higher tensile and shear bond strength of resin-based sealer in thin films is the opposite of that previously reported for bonding to dentin. The substrate clearly has an important role in failure behavior. Copyright © 2012 Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

  1. Thickness of Residual Wetting Film in Liquid-Liquid Displacement in Capillary Channels

    Science.gov (United States)

    Beresnev, I. A.; Gaul, W.; Vigil, D.

    2010-12-01

    Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a non-wetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of this wetting film? Understanding this question may determine the ultimate oil recovery. A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. We develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of about 20 % the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

  2. Novel method for the measurement of liquid film thickness during fuel spray impingement on surfaces.

    Science.gov (United States)

    Henkel, S; Beyrau, F; Hardalupas, Y; Taylor, A M K P

    2016-02-08

    This paper describes the development and application of a novel optical technique for the measurement of liquid film thickness formed on surfaces during the impingement of automotive fuel sprays. The technique makes use of the change of the light scattering characteristics of a metal surface with known roughness, when liquid is deposited. Important advantages of the technique over previously established methods are the ability to measure the time-dependent spatial distribution of the liquid film without a need to add a fluorescent tracer to the liquid, while the measurement principle is not influenced by changes of the pressure and temperature of the liquid or the surrounding gas phase. Also, there is no need for non-fluorescing surrogate fuels. However, an in situ calibration of the dependence of signal intensity on liquid film thickness is required. The developed method can be applied to measure the time-dependent and two-dimensional distribution of the liquid fuel film thickness on the piston or the liner of gasoline direct injection (GDI) engines. The applicability of this technique was evaluated with impinging sprays of several linear alkanes and alcohols with different thermo-physical properties. The surface temperature of the impingement plate was controlled to simulate the range of piston surface temperatures inside a GDI engine. Two sets of liquid film thickness measurements were obtained. During the first set, the surface temperature of the plate was kept constant, while the spray of different fuels interacted with the surface. In the second set, the plate temperature was adjusted to match the boiling temperature of each fuel. In this way, the influence of the surface temperature on the liquid film created by the spray of different fuels and their evaporation characteristics could be demonstrated.

  3. Thickness Dependence of Failure in Ultra-thin Glassy Polymer Films

    Science.gov (United States)

    Bay, Reed; Shimomura, Shinichiro; Liu, Yujie; Ilton, Mark; Crosby, Alfred

    The physical properties of polymer thin films change as the polymer chains become confined. Similar changes in mechanical properties have been observed, though these critical properties have only been explored a limited extent and with indirect methods. Here, we use a recently developed method to measure the complete uniaxial stress strain relationship of polymer thin films of polystyrene films (PS, Mw =130kg/mol, 490kg/mol, and 853kg/mol) as a function of thickness (20 nm-220nm). In this method, we hold a `dog-bone' shaped film on water between a flexible cantilever and a movable rigid boundary, measuring force-displacement from the cantilever deflection. From our measurements, we find that the modulus decreases as the PS chains become confined. The PS thin films exhibit ``ideal perfectly plastic'' behavior due to crazing, which differs from the typical brittle response of bulk PS. The draw stress due to crazing decreases with film thickness. These results provide new fundamental insight into how polymer behavior is altered due to structural changes in the entangled polymer network upon confinement. NSF DMR 1608614.

  4. Control of thickness uniformity and grain size in graphene films for transparent conductive electrodes

    International Nuclear Information System (INIS)

    Wu Wei; Yu Qingkai; Pei, Shin-Shem; Peng Peng; Bao Jiming; Liu Zhihong

    2012-01-01

    Large-scale and transferable graphene films grown on metal substrates by chemical vapor deposition (CVD) still hold great promise for future nanotechnology. To realize the promise, one of the key issues is to further improve the quality of graphene, e.g., uniform thickness, large grain size, and low defects. Here we grow graphene films on Cu foils by CVD at ambient pressure, and study the graphene nucleation and growth processes under different concentrations of carbon precursor. On the basis of the results, we develop a two-step ambient pressure CVD process to synthesize continuous single-layer graphene films with large grain size (up to hundreds of square micrometers). Scanning electron microscopy and Raman spectroscopy characterizations confirm the film thickness and uniformity. The transferred graphene films on cover glass slips show high electrical conductivity and high optical transmittance that make them suitable as transparent conductive electrodes. The growth mechanism of CVD graphene on Cu is also discussed, and a growth model has been proposed. Our results provide important guidance toward the synthesis of high quality uniform graphene films, and could offer a great driving force for graphene based applications. (paper)

  5. Thickness dependent structural, optical and electrical properties of Se85In12Bi3 nanochalcogenide thin films

    Science.gov (United States)

    Tripathi, Ravi P.; Zulfequar, M.; Khan, Shamshad A.

    2018-04-01

    Our aim is to study the thickness dependent effects on structure, electrical and optical properties of Se85In12Bi3 nanochalcogenide thin films. Bulk alloy of Se85In12Bi3 was synthesized by melt-quenching technique. The amorphous as well as glassy nature of Se85In12Bi3 chalcogenide was confirmed by non-isothermal Differential Scanning Calorimetry (DSC) measurements. The nanochalcogenide thin films of thickness 30, 60 and 90 nm were prepared on glass/Si wafer substrate using Physical Vapour Condensation Technique (PVCT). From XRD studies it was found that thin films have amorphous texture. The surface morphology and particle size of films were studied by Field Emission Scanning Electron Microscope (FESEM). From optical studies, different optical parameters were estimated for Se85In12Bi3 thin films at different thickness. It was found that the absorption coefficient (α) and extinction coefficient (k) increases with photon energy and decreases with film thickness. The optical absorption process followed the rule of indirect transitions and optical band gap were found to be increase with film thickness. The value of Urbach energy (Et) and steepness parameter (σ) were also calculated for different film thickness. For electrical studies, dc-conductivity measurement was done at different temperature and activation energy (ΔEc) were determined and found to be increase with film thickness.

  6. Thickness dependencies of structural and magnetic properties of cubic and tetragonal Heusler alloy bilayer films

    Science.gov (United States)

    Ranjbar, R.; Suzuki, K. Z.; Sugihara, A.; Ando, Y.; Miyazaki, T.; Mizukami, S.

    2017-07-01

    The thickness dependencies of the structural and magnetic properties for bilayers of cubic Co-based Heusler alloys (CCHAs: Co2FeAl (CFA), Co2FeSi (CFS), Co2MnAl (CMA), and Co2MnSi (CMS)) and D022-MnGa were investigated. Epitaxy of the B2 structure of CCHAs on a MnGa film was achieved; the smallest thickness with the B2 structure was found for 3-nm-thick CMS and CFS. The interfacial exchange coupling (Jex) was antiferromagnetic (AFM) for all of the CCHAs/MnGa bilayers except for unannealed CFA/MnGa samples. A critical thickness (tcrit) at which perpendicular magnetization appears of approximately 4-10 nm for the CMA/MnGa and CMS/MnGa bilayers was observed, whereas this thickness was 1-3 nm for the CFA/MnGa and CFS/MnGa films. The critical thickness for different CCHAs materials is discussed in terms of saturation magnetization (Ms) and the Jex .

  7. Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

    Directory of Open Access Journals (Sweden)

    Cheng-Chang Yu

    2014-01-01

    Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

  8. Quartz Microbalance Study of 400-angstrom Thick Films near the lambda Point

    Science.gov (United States)

    Chan, Moses H. W.

    2003-01-01

    In a recent measurement we observed the thinning of an adsorbed helium film induced by the confinement of critical fluctuations a few millikelvin below the lambda point. A capacitor set-up was used to measure this Casimir effect. In this poster we will present our measurement of an adsorbed helium film of 400 angstroms near the lambda point with a quartz microbalance. For films this thick, we must take into account the non-linear dynamics of the shear waves in the fluid. In spite of the added complications, we were able to confirm the thinning of the film due to the Casimir effect and the onset of the superfluid transition. In addition, we observe a sharp anomaly at the bulk lambda point, most likely related to critical dissipation of the first sound. This work is carried out in collaboration with Rafael Garcia, Stephen Jordon and John Lazzaretti. This work is funded by NASA's Office of Biological and Physical Research under grant.

  9. In-situ and elementally resolved determination of the thickness uniformity of multi-ply films by confocal micro XRF.

    Science.gov (United States)

    Peng, Song; Liu, Zhiguo; Sun, Tianxi; Wang, Guangfu; Ma, Yongzhong; Ding, Xunliang

    2014-08-01

    Confocal micro X-ray fluorescence (CM-XRF) with quasi-monochromatic excitation based on polycapillary X-ray optics was used to measure the thickness of multi-ply films. The relative errors of measuring an Fe film with a thickness of 16.3 μm and a Cu film with a thickness of 24.5 μm were 7.3% and 0.4%, respectively. The non-destructive and in-situ measurement of the thickness and uniformity of multi-ply films of Cu, Fe and Ni on a silicon surface was performed. CM-XRF was convenient in in-situ and elementally resolved analysis of the thickness of multi-ply films without a cumbersome theoretical correction model. Copyright © 2014 Elsevier Ltd. All rights reserved.

  10. A method for thickness determination of thin films of amalgamable metals by total-reflection X-ray fluorescence

    International Nuclear Information System (INIS)

    Bennun, L.; Greaves, E.D.; Barros, H.; Diaz-Valdes, J.

    2009-01-01

    A method for thickness determination of thin amalgamable metallic films by total-reflection X-ray fluorescence (TXRF) is presented. The peak's intensity in TXRF spectra are directly related to the surface density of the sample, i.e. to its thickness in a homogeneous film. Performing a traditional TXRF analysis on a thin film of an amalgamated metal, and determining the relative peak intensity of a specific metal line, the layer thickness can be precisely obtained. In the case of gold thickness determination, mercury and gold peaks overlap, hence we have developed a general data processing scheme to achieve the most precise results.

  11. Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Glenda Biasotto

    2011-03-01

    Full Text Available Bi0.85La0.15FeO3 (BLFO thin films were deposited on Pt(111/Ti/SiO2 /Si substrates by the soft chemical method. Films with thicknesses ranging from 140 to 280 nm were grown on platinum coated silicon substrates at 500°C for 2 hours. The X-ray diffraction analysis of BLFO films evidenced a hexagonal structure over the entire thickness range investigated. The grain size of the film changes as the number of the layers increases, indicating thickness dependence. It is found that the piezoelectric response is strongly influenced by the film thickness. It is shown that the properties of BiFeO3 thin films, such as lattice parameter, dielectric permittivity, piezoeletric coefficient etc., are functions of misfit strains.

  12. Tuning the Anisotropy of In-Plane Thermal Conduction in Thin Films by Modulating Thickness

    Science.gov (United States)

    Zeng, Yuqiang; Marconnet, Amy

    2018-01-01

    Anisotropy in thermal conductivity is promising for directing the heat-flow pathways in modern applications including thermal management of electronic devices. While some materials, like graphite, have strong anisotropy when comparing the in-plane thermal conductivity to cross-plane thermal conductivity, few naturally occurring materials have significant anisotropy within the in-plane directions, with an anisotropy ratio of ˜3 in few-layer black phosphorus being among the highest. In this Letter, we propose to control the thermal-conduction anisotropy by periodically modulating the thickness of thin films. Specifically, we model the thermal conduction in silicon-based thickness-modulated films using full three-dimensional simulations based on the phonon frequency-dependent Boltzmann transport equation. Our simulations demonstrate that phonon scattering with appropriately sized and shaped thickness-modulation features leads to a significant anisotropy in thermal conduction. In the diffusive regime, the same types of features lead to relatively low anisotropy (as calculated using the conventional heat diffusion equation). Thus, the enhanced thermal-conduction anisotropy with small features comes from the phonon scattering and size effects. Modulating the thickness of the thin films allows tuning the thermal-anisotropy ratio across an order of magnitude. Moreover, the proposed structures can be fabricated with currently available silicon-based nanofabrication techniques, without the need for exotic or expensive materials.

  13. Orientation and thickness dependence of magnetization at the interfacesof highly spin-polarized manganite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, Rajesh V.; Arenholz, Elke; Suzuki, Y.

    2008-08-18

    We have probed the nature of magnetism at the surface of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films. The spin polarization of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films is not intrinsically suppressed at all surfaces and interfaces but is highly sensitive to both the epitaxial strain state as well as the substrate orientation. Through the use of soft x-ray spectroscopy, the magnetic properties of (001), (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces have been investigated and compared to bulk magnetometry and resistivity measurements. The magnetization of (110) and (111)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interfaces are more bulk-like as a function of thickness whereas the magnetization at the (001)-oriented La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} interface is suppressed significantly below a layer thickness of 20 nm. Such findings are correlated with the biaxial strain state of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films; for a given film thickness it is the tetragonal distortion of (001) La{sub 0.7}Sr{sub 0.3}MnO{sub 3} that severely impacts the magnetization, whereas the trigonal distortion for (111)-oriented films and monoclinic distortion for (110)-oriented films have less of an impact. These observations provide evidence that surface magnetization and thus spin polarization depends strongly on the crystal surface orientation as well as epitaxial strain.

  14. Spin lattice relaxation of 8Li in a ferromagnetic EuO epitaxial thin film

    Science.gov (United States)

    Song, Q.; Chow, K. H.; Egilmez, M.; Fan, I.; Hossain, M. D.; Kiefl, R. F.; Kreitzman, S. R.; Levy, C. D. P.; Morris, G. D.; Parolin, T. J.; Pearson, M. R.; Salman, Z.; Saadaoui, H.; Smadella, M.; Wang, D.; Ingle, N. J. C.; MacFarlane, W. A.

    2009-04-01

    We inject a low energy spin polarized Li+8 beam into an epitaxially grown multilayer film consisting of Au(20 nm)/EuO(100 nm)/ LaAlO3, and investigate the nuclear spin relaxation at 3.33 T. The relaxation varies with implantation energy below 28 keV as the fraction of the probe Li8 stopping in each layer changes. We attribute the fast relaxating component to the EuO, while the much slower relaxation has contributions from both the Au and the substrate. However, fast relaxation is still observed at the lowest implantation energy where all the Li8 stops in the Au capping layer. This may be due to a proximity effect from the EuO.

  15. Spin lattice relaxation of {sup 8}Li in a ferromagnetic EuO epitaxial thin film

    Energy Technology Data Exchange (ETDEWEB)

    Song, Q., E-mail: susan@phas.ubc.c [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Chow, K.H.; Egilmez, M.; Fan, I. [Department of Physics, University of Alberta, Edmonton, AB, T6G 2G7 (Canada); Hossain, M.D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Kiefl, R.F. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Canadian Institute of Advanced Research (Canada); Kreitzman, S.R.; Levy, C.D.P.; Morris, G.D. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Parolin, T.J. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Pearson, M.R. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Salman, Z. [TRIMF, 4004 Wesbrook Mall, Vancouver, BC, V6T 2A3 (Canada); Physics Department, Oxford University, Parks Road, Oxford, OX1 3PU (United Kingdom); Saadaoui, H.; Smadella, M.; Wang, D. [Department of Physics, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada); Ingle, N.J.C. [AMPEL, University of British Columbia, Vancouver (Canada); MacFarlane, W.A. [Chemistry Department, University of British Columbia, Vancouver, BC, V6T 1Z1 (Canada)

    2009-04-15

    We inject a low energy spin polarized {sup 8}Li{sup +} beam into an epitaxially grown multilayer film consisting of Au(20 nm)/EuO(100 nm)/LaAlO{sub 3}, and investigate the nuclear spin relaxation at 3.33 T. The relaxation varies with implantation energy below 28 keV as the fraction of the probe {sup 8}Li stopping in each layer changes. We attribute the fast relaxating component to the EuO, while the much slower relaxation has contributions from both the Au and the substrate. However, fast relaxation is still observed at the lowest implantation energy where all the {sup 8}Li stops in the Au capping layer. This may be due to a proximity effect from the EuO.

  16. Photometer for monitoring the thickness of inkjet printed films for organic electronic and sensor applications.

    Science.gov (United States)

    Im, Jisun; Sengupta, Sandip K; Whitten, James E

    2010-03-01

    Inkjet printed organic thin films are being used for a variety of electronic and sensor applications with advantages that include ease of fabrication and reproducibility. Construction and use of a low-cost photometer based on a light-emitting diode (LED) light source and a photodiode detector are described. The photometer attaches to the exit of the printer with the transparent substrate onto which the film is printed passing between the LED and photodiode. By measuring the output voltage of the detector, the transmittance and absorbance of the inkjet printed film can be calculated in real-time. Since absorbance is linearly proportional to thickness in the Beer-Lambert regime, the thickness of the film may be monitored and controlled by varying the number of passes through the printer. Use of the photometer is demonstrated for inkjet printed films of monolayer-protected colloidal gold nanoparticles that function as chemical vapor sensors. The photometer may find applications in both research and quality control related to the manufacture of organic electronic devices and sensors and enables "feedback-controlled" inkjet printing.

  17. Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates.

    Science.gov (United States)

    Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Gang, Chen; Lu, Wei

    2018-03-07

    Metal-catalysed chemical vapor deposition has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new chemical vapor deposition approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800℃. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and X-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an atomic layer deposition system, which promotes great application potential for optoelectronic and thermoelectronic-devices. © 2018 IOP Publishing Ltd.

  18. The spatial thickness distribution of metal films produced by large area pulsed laser deposition

    International Nuclear Information System (INIS)

    Pryds, Nini; Schou, Jorgen; Linderoth, Soren

    2007-01-01

    Thin films of metals have been deposited in the large-area Pulsed Laser Deposition (PLD) Facility at Riso National Laboratory. Thin films of Ag and Ni were deposited with laser pulses from an excimer laser at 248 nm with a rectangular beam spot at a fluence of 10 J/cm 2 on glass substrates of 127 mm diameter positioned 80 mm from the target in vacuum. We have explored the distribution of deposited material on a stationary substrate from a fixed point of impact on the target relative to the substrate. In all cases the angular distribution of the deposited metal layers shows a distinct 'flip-over' of the plume. The thickness of the deposited films over the full area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM). The measured distributions were then compared with analytical expressions. Finally, the angular distribution of the film thickness has been utilized in an algorithm for production of films over large areas

  19. Thickness-controlled direct growth of nanographene and nanographite film on non-catalytic substrates

    Science.gov (United States)

    Du, Lei; Yang, Liu; Hu, Zhiting; Zhang, Jiazhen; Huang, Chunlai; Sun, Liaoxin; Wang, Lin; Wei, Dacheng; Chen, Gang; Lu, Wei

    2018-05-01

    Metal-catalyzed chemical vapor deposition (CVD) has been broadly employed for large-scale production of high-quality graphene. However, a following transfer process to targeted substrates is needed, which is incompatible with current silicon technology. We here report a new CVD approach to form nanographene and nanographite films with accurate thickness control directly on non-catalytic substrates such as silicon dioxide and quartz at 800 °C. The growth time is as short as a few seconds. The approach includes using 9-bis(diethylamino)silylanthracene as the carbon source and an atomic layer deposition (ALD) controlling system. The structure of the formed nanographene and nanographite films were characterized using atomic force microscopy, high resolution transmission electron microscopy, Raman scattering, and x-ray photoemission spectroscopy. The nanographite film exhibits a transmittance higher than 80% at 550 nm and a sheet electrical resistance of 2000 ohms per square at room temperature. A negative temperature-dependence of the resistance of the nanographite film is also observed. Moreover, the thickness of the films can be precisely controlled via the deposition cycles using an ALD system, which promotes great application potential for optoelectronic and thermoelectronic-devices.

  20. The effect of hydrogen on the conductivity of Ag-Pd thick film resistors

    Science.gov (United States)

    Aleksandrov, V. A.; Kalyuzhnyi, D. G.; Aleksandrovich, E. V.

    2013-01-01

    The resistance of silver-palladium thick film resistors decreases and their surface conduction type changes upon heating in a flow of hydrogen at temperatures within 50-100°C or hydrogenation in an aqueous acid electrolyte at room temperature. These effects are due to the reduction of PdO (present in the Ag-Pd film) to Pd by hydrogen entering into the resistor material. In the electrolyte, the resistance of samples starts decreasing at the moment of the current being switched on.

  1. Analysis of thickness of a hydrophobic fluoropolymer film based on electrowetting.

    Science.gov (United States)

    Ko, Hyojin; Phan, Minh Dinh; Khatua, Dibyendu; Jung, Chan-Hee; Choi, Jae-Hak; Kwon, Oh-Sun; Shin, Kwanwoo

    2013-07-01

    The electrowetting of water drops on a dielectric fluoropolymer film was studied experimentally. The dependence of the contact angles of the water drops on the applied voltage has been well explained in the low-voltage limit by using the classical Young-Lippmann theory. With this theory, the thicknesses of films coated on glass substrates by using a spin-coater were obtained indirectly by fitting the contact angle data and were confirmed by using X-ray reflectometry. The two sets of results showed a good agreement. In addition, we confirmed that the contact angle saturation at high voltage were consistent with Peykov's model.

  2. Thickness dependent structural order in P3HT films - a key parameter for high OFET mobility

    Energy Technology Data Exchange (ETDEWEB)

    Gburek, Benedikt; Sharma, Richa; Balster, Torsten; Wagner, Veit [School of Engineering and Science, Jacobs University Bremen (Germany)

    2010-07-01

    Applications of organic electronics require cheap and fast production methods on flexible substrates. Following these goals, top-gate OFETs on PET foils were used to analyze the dependence of the device characteristics on the crucial parameter of semiconductor layer thickness. The organic semiconductor, regio-regular P3HT, and the gate insulator were deposited by spin-coating under atmospheric conditions. The charge carrier mobility was found to be rather low for extremely thin layers of several nanometers only. However, with increasing layer thickness, mobility increases by two orders of magnitude until a ''saturation thickness'' of 50 nm, above which it remains constant. Further details of the ordering were extracted according to the Vissenberg-Matters model with gate-voltage dependent mobility {mu}={mu}{sub 0}((V{sub GS}-V{sub th})/1V){sup {gamma}}, where {gamma} is directly related to the width of the density of states. The analysis reveals that the disorder parameter {gamma} decreases from 3.1 to 1.0 over the examined thickness range, which explains the low mobility of thinner films by higher energetic disorder. This analysis proves to be highly advantageous as it represents the whole transfer curve, gives better comparability and offers more physical insight. Our study demonstrates the crucial role of layer thickness tuning for improved film structure and optimum material performance.

  3. Enhancing Performance of Large-Area Organic Solar Cells with Thick Film via Ternary Strategy.

    Science.gov (United States)

    Zhang, Jianqi; Zhao, Yifan; Fang, Jin; Yuan, Liu; Xia, Benzheng; Wang, Guodong; Wang, Zaiyu; Zhang, Yajie; Ma, Wei; Yan, Wei; Su, Wenming; Wei, Zhixiang

    2017-06-01

    Large-scale fabrication of organic solar cells requires an active layer with high thickness tolerability and the use of environment-friendly solvents. Thick films with high-performance can be achieved via a ternary strategy studied herein. The ternary system consists of one polymer donor, one small molecule donor, and one fullerene acceptor. The small molecule enhances the crystallinity and face-on orientation of the active layer, leading to improved thickness tolerability compared with that of a polymer-fullerene binary system. An active layer with 270 nm thickness exhibits an average power conversion efficiency (PCE) of 10.78%, while the PCE is less than 8% with such thick film for binary system. Furthermore, large-area devices are successfully fabricated using polyethylene terephthalate (PET)/Silver gride or indium tin oxide (ITO)-based transparent flexible substrates. The product shows a high PCE of 8.28% with an area of 1.25 cm 2 for a single cell and 5.18% for a 20 cm 2 module. This study demonstrates that ternary organic solar cells exhibit great potential for large-scale fabrication and future applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Effect of sputtered lanthanum hexaboride film thickness on field emission from metallic knife edge cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Kirley, M. P.; Novakovic, B.; Sule, N.; Weber, M. J.; Knezevic, I.; Booske, J. H. [Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)

    2012-03-15

    We report experiments and analysis of field emission from metallic knife-edge cathodes, which are sputter-coated with thin films of lanthanum hexaboride (LaB{sub 6}), a low-work function material. The emission current is found to depend sensitively on the thickness of the LaB{sub 6} layer. We find that films thinner than 10 nm greatly enhance the emitted current. However, cathodes coated with a thicker layer of LaB{sub 6} are observed to emit less current than the uncoated metallic cathode. This result is unexpected due to the higher work function of the bare metal cathode. We show, based on numerical calculation of the electrostatic potential throughout the structure, that the external (LaB{sub 6}/vacuum) barrier is reduced with respect to uncoated samples for both thin and thick coatings. However, this behavior is not exhibited at the internal (metal/LaB{sub 6}) barrier. In thinly coated samples, electrons tunnel efficiently through both the internal and external barrier, resulting in current enhancement with respect to the uncoated case. In contrast, the thick internal barrier in thickly coated samples suppresses current below the value for uncoated samples in spite of the lowered external barrier. We argue that this coating thickness variation stems from a relatively low (no higher than 10{sup 18} cm{sup -3}) free carrier density in the sputtered polycrystalline LaB{sub 6}.

  5. Ion-beam-induced ferromagnetism in Mn-doped PrFeO{sub 3} thin films grown on Si (100)

    Energy Technology Data Exchange (ETDEWEB)

    Sultan, Khalid; Ikram, M.; Mir, Sajad Ahmad; Habib, Zubida; Aarif ul Islam, Shah [National Institute of Technology, Solid State Physics Lab. Department of Physics, Srinagar, J and K (India); Ali, Yasir [Saint Longwal Institute of Engineering and Technology, Sangrur, Punjab (India); Asokan, K. [Inter University Accelerator Centre, Materials Science Division, New Delhi (India)

    2016-01-15

    The present study shows that the ion beam irradiation induces room-temperature ferromagnetic ordering in pulsed laser-deposited Mn-doped PrFeO{sub 3} thin films on Si (100) apart from change in the morphological, structural and electrical properties. Dense electronic excitation produced by high-energy 120 MeV Ag{sup 9+} ion irradiation causes change in surface roughness, crystallinity and strain. It is also evident that these excitations induce the magnetic ordering in this system. The observed modifications are due to the large electronic energy deposited by swift heavy ions irradiation. The appearance of ferromagnetism at 300 K in these samples after irradiation may be attributed to the canting of the antiferromagnetically ordered spins due to the structural distortion. (orig.)

  6. Fabrication and properties of multiferroic nanocomposite films

    KAUST Repository

    Al-Nassar, Mohammed Y.

    2015-01-01

    A new type of multiferroic polymer nanocomposite is presented, which exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of a ferroelectric copolymer poly(vinylindene fluoride-trifluoroethylene) [P(VDF-TrFE)] and high aspect ratio ferromagnetic nickel (Ni) nanowires (NWs), which were grown inside anodic aluminum oxide membranes. The fabrication of nanocomposite films with Ni NWs embedded in P(VDF-TrFE) has been successfully carried out via a simple low-temperature spin-coating technique. Structural, ferromagnetic, and ferroelectric properties of the developed nanocomposite have been investigated. The remanent and saturation polarization as well as the coercive field of the ferroelectric phase are slightly affected by the incorporation of the NWs as well as the thickness of the films. While the former two decrease, the last increases by adding the NWs or increasing the thickness. The ferromagnetic properties of the nanocomposite films are found to be isotropic.

  7. Dispersive shock waves in Bose-Einstein condensates and nonlinear nano-oscillators in ferromagnetic thin films

    Science.gov (United States)

    Hoefer, Mark A.

    This thesis examines nonlinear wave phenomena, in two physical systems: a Bose-Einstein condensate (BEC) and thin film ferromagnets where the magnetization dynamics are excited by the spin momentum transfer (SMT) effect. In the first system, shock waves generated by steep gradients in the BEC wavefunction are shown to be of the disperse type. Asymptotic and averaging methods are used to determine shock speeds and structure in one spatial dimension. These results are compared with multidimensional numerical simulations and experiment showing good, qualitative agreement. In the second system, a model of magnetization dynamics due to SMT is presented. Using this model, nonlinear oscillating modes---nano-oscillators---are found numerically and analytically using perturbative methods. These results compare well with experiment. A Bose-Einstein condensate (BEC) is a quantum fluid that gives rise to interesting shock wave nonlinear dynamics. Experiments depict a BEC that exhibits behavior similar to that of a shock wave in a compressible gas, e.g. traveling fronts with steep gradients. However, the governing Gross-Pitaevskii (GP) equation that describes the mean field of a BEC admits no dissipation hence classical dissipative shock solutions do not explain the phenomena. Instead, wave dynamics with small dispersion is considered and it is shown that this provides a mechanism for the generation of a dispersive shock wave (DSW). Computations with the GP equation are compared to experiment with excellent agreement. A comparison between a canonical 1D dissipative and dispersive shock problem shows significant differences in shock structure and shock front speed. Numerical results associated with laboratory experiments show that three and two-dimensional approximations are in excellent agreement and one dimensional approximations are in qualitative agreement. The interaction of two DSWs is investigated analytically and numerically. Using one dimensional DSW theory it is argued

  8. Effect of separated layer thickness on magnetoresistance and magnetic properties of Co/Dy/Co and Ni/Dy/Ni film systems

    Science.gov (United States)

    Shabelnyk, T. M.; Shutylieva, O. V.; Vorobiov, S. I.; Pazukha, I. M.; Chornous, A. M.

    2018-01-01

    Co(5 nm)/Dy(tDy)/Co(20 nm)/S and Ni(5 nm)/Dy(tDy)/Ni(20 nm)/S trilayer films are prepared by electron-beam sputtering to investigate the influence of dysprosium layer thickness (tDy) and thermal annealing on the crystal structure, magnetoresistance (MR) and magnetic properties of thin films. The thickness of Dy layer changed in the range from 1 nm to 20 nm. The samples annealed for 20 min at 700 K. Electron diffraction patterns reveal that the as-deposited and annealed systems Co/Dy/Co and Ni/Dy/Ni had fcc-Co + hcp-Dy and fcc-Ni + hcp-Dy phase state, respectively. It is also shown that at the tDy = 15 nm the transition from amorphous to crystalline structures of Dy layer is observed. An increase in the Dy layer thickness results in changes in the MR and magnetic properties of the trilayer systems. It is shown that MR is most thermally stable against annealing to 700 K at tDy = 15 nm for Co/Dy/Co as well as for Ni/Dy/Ni. For tDy = 15 nm the, value of MR for both system increases by two times compared to those of pure ferromagnetic (FM) samples. The coercivity (Bc), remanent (Mr) and saturation (Ms) magnetization of the in-plain magnetization hysteresis loops are related to the Dy layer thickness too. The coercivity depends on the FM materials type and diffusion processes at the layer boundary. Accordingly, Mr and Ms are reduced with tDy increasing before and after annealing for both trilayer systems.

  9. Ferroelectric domain inversion and its stability in lithium niobate thin film on insulator with different thicknesses

    Energy Technology Data Exchange (ETDEWEB)

    Shao, Guang-hao; Bai, Yu-hang; Cui, Guo-xin; Li, Chen; Qiu, Xiang-biao; Wu, Di; Lu, Yan-qing, E-mail: yqlu@nju.edu.cn [National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Geng, De-qiang [Jinan Jingzheng Electronics Co., Ltd., Jinan 250100 (China)

    2016-07-15

    Ferroelectric domain inversion and its effect on the stability of lithium niobate thin films on insulator (LNOI) are experimentally characterized. Two sets of specimens with different thicknesses varying from submicron to microns are selected. For micron thick samples (∼28 μm), domain structures are achieved by pulsed electric field poling with electrodes patterned via photolithography. No domain structure deterioration has been observed for a month as inspected using polarizing optical microscopy and etching. As for submicron (540 nm) films, large-area domain inversion is realized by scanning a biased conductive tip in a piezoelectric force microscope. A graphic processing method is taken to evaluate the domain retention. A domain life time of 25.0 h is obtained and possible mechanisms are discussed. Our study gives a direct reference for domain structure-related applications of LNOI, including guiding wave nonlinear frequency conversion, nonlinear wavefront tailoring, electro-optic modulation, and piezoelectric devices.

  10. Evaluation of Cadmium-Free Thick Film Materials on Alumina Substrates

    Energy Technology Data Exchange (ETDEWEB)

    L. H. Perdieu

    2009-09-01

    A new cadmium-free material system was successfully evaluated for the fabrication of thick film hybrid microcircuits at Honeywell Federal Manufacturing & Technologies (FM&T). The characterization involved screen printing, drying and firing two groups of resistor networks which were made using the current material system and the cadmium-free material system. Electrical, environmental and adhesion tests were performed on both groups to determine the more suitable material system. Additionally, untrimmed test coupons were evaluated to further characterize the new materials. The cadmiumfree material system did as well or better than the current material system. Therefore, the new cadmium-free material system was approved for use on production thick film product.

  11. DETERMINATION OF LIQUID FILM THICKNESS FOLLOWING DRAINING OF CONTACTORS, VESSELS, AND PIPES IN THE MCU PROCESS

    International Nuclear Information System (INIS)

    Poirier, M; Fernando Fondeur, F; Samuel Fink, S

    2006-01-01

    The Department of Energy (DOE) identified the caustic side solvent extraction (CSSX) process as the preferred technology to remove cesium from radioactive waste solutions at the Savannah River Site (SRS). As a result, Washington Savannah River Company (WSRC) began designing and building a Modular CSSX Unit (MCU) in the SRS tank farm to process liquid waste for an interim period until the Salt Waste Processing Facility (SWPF) begins operations. Both the solvent and the strip effluent streams could contain high concentrations of cesium which must be removed from the contactors, process tanks, and piping prior to performing contactor maintenance. When these vessels are drained, thin films or drops will remain on the equipment walls. Following draining, the vessels will be flushed with water and drained to remove the flush water. The draining reduces the cesium concentration in the vessels by reducing the volume of cesium-containing material. The flushing, and subsequent draining, reduces the cesium in the vessels by diluting the cesium that remains in the film or drops on the vessel walls. MCU personnel requested that Savannah River National Laboratory (SRNL) researchers conduct a literature search to identify models to calculate the thickness of the liquid films remaining in the contactors, process tanks, and piping following draining of salt solution, solvent, and strip solution. The conclusions from this work are: (1) The predicted film thickness of the strip effluent is 0.010 mm on vertical walls, 0.57 mm on horizontal walls and 0.081 mm in horizontal pipes. (2) The predicted film thickness of the salt solution is 0.015 mm on vertical walls, 0.74 mm on horizontal walls, and 0.106 mm in horizontal pipes. (3) The predicted film thickness of the solvent is 0.022 mm on vertical walls, 0.91 mm on horizontal walls, and 0.13 mm in horizontal pipes. (4) The calculated film volume following draining is: (a) Salt solution receipt tank--1.6 gallons; (b) Salt solution feed

  12. A thermal sensor for water using self-heated NTC thick-film segmented thermistors

    OpenAIRE

    Nikolić, Maria Vesna; Radojčić, B. M.; Aleksić, Obrad; Luković, Miloljub D.; Nikolić, Pantelija

    2011-01-01

    A simple thermal (heat loss) sensor system was designed in a small plastic tube housing using a negative thermal coefficient (NTC) thick-film thermistor as a self-heating sensor. The voltage power supply [range constant voltage (RCV)-range constant voltage] uses the measured input water temperature to select the applied voltage in steps (up and down) in order to enable operation of the sensor at optimal sensitivity for different water temperatures. The input water temperature was measured usi...

  13. Characterization of thick and thin film SiCN for pressure sensing at high temperatures.

    Science.gov (United States)

    Leo, Alfin; Andronenko, Sergey; Stiharu, Ion; Bhat, Rama B

    2010-01-01

    Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA), thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40-60 μm) and thick (about 2-3 mm) films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  14. Characterization of Thick and Thin Film SiCN for Pressure Sensing at High Temperatures

    Directory of Open Access Journals (Sweden)

    Rama B. Bhat

    2010-02-01

    Full Text Available Pressure measurement in high temperature environments is important in many applications to provide valuable information for performance studies. Information on pressure patterns is highly desirable for improving performance, condition monitoring and accurate prediction of the remaining life of systems that operate in extremely high temperature environments, such as gas turbine engines. A number of technologies have been recently investigated, however these technologies target specific applications and they are limited by the maximum operating temperature. Thick and thin films of SiCN can withstand high temperatures. SiCN is a polymer-derived ceramic with liquid phase polymer as its starting material. This provides the advantage that it can be molded to any shape. CERASET™ also yields itself for photolithography, with the addition of photo initiator 2, 2-Dimethoxy-2-phenyl-acetophenone (DMPA, thereby enabling photolithographical patterning of the pre-ceramic polymer using UV lithography. SiCN fabrication includes thermosetting, crosslinking and pyrolysis. The technology is still under investigation for stability and improved performance. This work presents the preparation of SiCN films to be used as the body of a sensor for pressure measurements in high temperature environments. The sensor employs the phenomenon of drag effect. The pressure sensor consists of a slender sensitive element and a thick blocking element. The dimensions and thickness of the films depend on the intended application of the sensors. Fabrication methods of SiCN ceramics both as thin (about 40–60 µm and thick (about 2–3 mm films for high temperature applications are discussed. In addition, the influence of thermosetting and annealing processes on mechanical properties is investigated.

  15. [Determination of film thickness, component and content based on glass surface by using XRF spectrometry].

    Science.gov (United States)

    Mei, Yan; Ma, Mi-Xia; Nie, Zuo-Ren

    2013-12-01

    Film thickness, component and content based on glass surface were determined by using XRF technic, measure condition and instrument work condition in every layer were set and adjusted for the best measure effect for every element. Background fundamental parameter (BG-FP) method was built up. Measure results with this method were consistent with the actual preparation course and the method could fit to production application.

  16. Effect of substrate and antiferromagnetic film's thickness on exchange-bias field (invited)

    Science.gov (United States)

    Allegranza, Oletta; Chen, Mao-Min

    1993-05-01

    In this work, we studied the effect of different substrates and the thickness dependence of the antiferromagnetic layer on the exchange-bias field, created through interfacial exchange coupling between NiFe and FeMn. The substrates considered were glass and a metallic underlayer, such as Ta, on glass. We noticed different behaviors of the two types of films when annealed in a magnetic field at 240 °C and we carefully looked at their temperature dependence, observing that the blocking temperature, at which the exchange-bias field goes to zero, decreases with increasing FeMn thickness. We also found that, when reducing the antiferromagnetic film's thickness, the exchange-bias field of the annealed NiFe/FeMn structure improves on both types of substrate. Since a low blocking temperature is undesirable, we developed a method to take advantage of the thinner FeMn film's properties and to compensate the decrease in blocking temperature. The FeMn was deposited in two separate layers. The first layer, at the NiFe interface, was sputtered in pure Ar, and the second in an Ar/O2 or Ar/N2 mixture. The advantage of this technique was particularly impressive for films deposited on Ta over glass, where a factor of 2 improvement in exchange bias field was obtained at both room temperature and 80 °C, when compared to the structure with the same total antiferromagnetic material's thickness deposited in one single layer. Blocking temperatures were above 150 °C.

  17. Investigation of Polymer Thick-film Piezoresistors for Medical Wrist Rehabilitation and Artificial Knee Load Sensors

    OpenAIRE

    Jacq, Caroline; Maeder, Thomas; Emery, Simon; Simoncini, Matteo; Meurville, Eric; Ryser, Peter

    2014-01-01

    Readily-available and low-cost commercial polymer-based composite materials, such as standard epoxy-fibreglass printed circuit board (PCB) substrates and resin-carbon thick-film piezoresistors, were evaluated as a solution for medical force sensors, such as a wrist rehabilitation device and an implantable wireless artificial knee force sensor. We show that such materials have high sensitivity, and sufficient short-term stability – provided careful mechanical design and materials selection are...

  18. Thickness-Dependent Properties of YBCO Films Grown on GZO/CLO-Buffered NiW Substrates

    DEFF Research Database (Denmark)

    Malmivirta, M.; Huhtinen, H.; Yue, Zhao

    2017-01-01

    To study the role of novel Gd2Zr2O7/Ce0.9La0.1O2 buffer layer structure on a biaxially textured NiW substrate, a set of YBa2Cu3O7−δ (YBCO) films with different thicknesses were prepared by pulsed laser deposition (PLD). Interface imperfections as well as thickness-dependent structural properties...... were observed in the YBCO thin films. The structure is also reflected into the improved superconducting properties with the highest critical current densities in films with intermediate thicknesses. Therefore,it can be concluded that the existing buffer layers need more optimization before they can...... be successfully used for films with various thicknesses. This issue is linked to the extremely susceptible growth method of PLD when compared to the commonly used chemical deposition methods. Nevertheless, PLD-grown films can give a hint on what to concentrate to be able to further improve the buffer layer...

  19. Scaling of elongation transition thickness during thin-film growth on weakly interacting substrates

    Science.gov (United States)

    Lü, B.; Souqui, L.; Elofsson, V.; Sarakinos, K.

    2017-08-01

    The elongation transition thickness ( θElong) is a central concept in the theoretical description of thin-film growth dynamics on weakly interacting substrates via scaling relations of θElong with respect to rates of key atomistic film-forming processes. To date, these scaling laws have only been confirmed quantitatively by simulations, while experimental proof has been left ambiguous as it has not been possible to measure θElong. Here, we present a method for determining experimentally θElong for Ag films growing on amorphous SiO2: an archetypical weakly interacting film/substrate system. Our results confirm the theoretically predicted θElong scaling behavior, which then allow us to calculate the rates of adatom diffusion and island coalescence completion, in good agreement with the literature. The methodology presented herein casts the foundation for studying growth dynamics and cataloging atomistic-process rates for a wide range of weakly interacting film/substrate systems. This may provide insights into directed growth of metal films with a well-controlled morphology and interfacial structure on 2D crystals—including graphene and MoS2—for catalytic and nanoelectronic applications.

  20. Annealing effects on the ferromagnetic resonance linewidths of sputter-deposited Fe100−xCox(001) thin films (x < 11)

    International Nuclear Information System (INIS)

    Kusaoka, A.; Kimura, J.; Takahashi, Y.; Inaba, N.; Kirino, F.; Ohtake, M.; Futamoto, M.

    2015-01-01

    Effects of post-growth annealing on the magnetic damping of 3d transition alloy thin films were investigated. Fe 100−x Co x (x < 11 at. %) thin films were epitaxially deposited on GaAs(001) substrates by rf magnetron sputtering, and some of them were annealed without exposing to atmosphere. Electrical measurement showed that in-plane resistivity was smaller in the annealed films than in the as-deposited ones, indicating that the annealing mitigates crystalline imperfections and leads to reduced electron scattering rates. Magnetic damping was evaluated by the peak widths of ferromagnetic resonance (FMR) spectra obtained by a conventional Q-band spectrometer. Comparison of as-deposited and annealed specimens showed that the damping was decreased by annealing. Combined with the electrical and FMR measurements, these observations are consistent with the theoretical predictions that crystalline imperfections strongly influence the magnetic damping, both in intrinsic and extrinsic origins

  1. Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture

    Directory of Open Access Journals (Sweden)

    Heike Bartsch

    2018-04-01

    Full Text Available Multi-electrode arrays find application in electrophysiological recordings. The quality of the captured signals depends on the interfacial contact between electrogenic cells and the electronic system. Therefore, it requires reliable low-impedance electrodes. Low-temperature cofired ceramic technology offers a suitable platform for rapid prototyping of biological reactors and can provide both stable fluid supply and integrated bio-hardware interfaces for recordings in electrogenic cell cultures. The 3D assembly of thick film gold electrodes in in vitro bio-reactors has been demonstrated for neuronal recordings. However, especially when dimensions become small, their performance varies strongly. This work investigates the influence of different coatings on thick film gold electrodes with regard to their influence on impedance behavior. PEDOT:PSS layer, titanium oxynitride and laminin coatings are deposited on LTCC gold electrodes using different 2D and 3D MEA chip designs. Their impedance characteristics are compared and discussed. Titanium oxynitride layers emerged as suitable functionalization. Small 86-µm-electrodes have a serial resistance Rs of 32 kOhm and serial capacitance Cs of 4.1 pF at 1 kHz. Thick film gold electrodes with such coatings are thus qualified for signal recording in 3-dimensional in vitro cell cultures.

  2. Thickness dependence of microstructure in LaCaMnO thin films

    International Nuclear Information System (INIS)

    Gross, G.M.; Razavi, F.S.; Praus, R.B.; Habermeier, H.-U.

    2000-01-01

    Introducing biaxial strain in doped lanthanum manganite thin films is an excellent tool to modify the electrical and transport properties systematically by controlled changes of the microstructure on an atomic scale. We deposited La 2/3 Ca 1/3 MnO 3 thin films onto SrTiO 3 single-crystal substrates under reproducible conditions in an optimized pulsed laser deposition process. A thickness range of 40 to 500 nm was chosen for the manganite layers to investigate the variation of the average lattice parameters with thickness using X-ray diffraction. We re-investigated the samples after annealing to determine the structural aspects of the relaxation behavior of the layers. A second set of samples was prepared with an analogous in situ annealing process. AFM was applied to examine the morphology and grain size of the layers. Due to a thermally induced strain relaxation process the thicker films show a gradual approach of the out-of-plane lattice constant to the bulk ceramic value. Further relaxation could be achieved with an annealing at 900 deg. C for 1 h. Lattice parameter changes with varying thickness and annealing processes are correlated with transport and magnetic properties

  3. Effects of high voltage pulse trimming on structural properties of thick-film resistors

    Directory of Open Access Journals (Sweden)

    Stanimirović Zdravko

    2017-01-01

    Full Text Available Nowadays, compact and reliable electronic devices including up-to-date ceramic micro-electro-mechanical systems require thick-film resistors with significantly reduced dimensions and stable and precise resistance values. For that reason, instead of standard laser trimming method, high voltage pulse trimming of thick-film resistors is being introduced. This method allows controlled and reliable resistance adjustment regardless of resistor position or dimensions and without the presence of cuts. However, it causes irreversible structural changes in the pseudorandom network formed during sintering causing the changes in conducting mechanisms. In this paper results of the experimental investigation of high voltage pulse trimming of thick-film resistors are presented. Obtained results are analyzed and correlations between resistance and low-frequency noise changes and changes in conducting mechanisms in resistors due to high voltage pulse trimming are observed. Sources of measured fluctuations are identified and it is shown that this type of trimming is a valid alternative trimming method to the dominant laser trimming. [Project of the Serbian Ministry of Education, Science and Technological Development, Grant no. III44003 and III45007

  4. Critical current densities in thick yttrium-barium cuprate (1-2-3) films

    International Nuclear Information System (INIS)

    Ryvkina, G.G.; Gorlanov, S.F.; Vedernikov, G.E.; Telegin, A.B.; Ryabin, V.A.; Khodos, M.Ya.

    1993-01-01

    The study of critical current densities j c of oxide superconductors and their thick films is a very important practical task because the value of j c is one of the main criteria for their utilization in modern cryoelectronics. For most devices based on the Josephson effect, the value of j c ∼ 10 2 - 10 3 A/cm 2 is acceptable, which is easily attainable for polycrystalline thick films obtained by stenciling. The study of the current-transport phenomenon involves a number of difficulties, especially for direct current, because both the sample itself and the lead-in contacts are resistance-heated during the measurements, which, in turn, results in lower values of the j c . Measurements with pulsed currents allow one to lower the power that is applied to the sample; the heat that is released in the sample is reduced, in comparison to measurements with direct current, by a factor of the pulsed-current duty cycle. In addition, measurements with direct current detects only the appearance of resistance; it provides no information on the rest of the transition from the normal to the superconductive state, i.e., on the so-called 'tail' of the transition. In this work, the authors studied critical current densities of thick HTSC yttrium-barium cuprate films of the 1-2-3 composition using pulsed current

  5. Functionalized Thick Film Impedance Sensors for Use in In Vitro Cell Culture.

    Science.gov (United States)

    Bartsch, Heike; Baca, Martin; Fernekorn, Uta; Müller, Jens; Schober, Andreas; Witte, Hartmut

    2018-04-05

    Multi-electrode arrays find application in electrophysiological recordings. The quality of the captured signals depends on the interfacial contact between electrogenic cells and the electronic system. Therefore, it requires reliable low-impedance electrodes. Low-temperature cofired ceramic technology offers a suitable platform for rapid prototyping of biological reactors and can provide both stable fluid supply and integrated bio-hardware interfaces for recordings in electrogenic cell cultures. The 3D assembly of thick film gold electrodes in in vitro bio-reactors has been demonstrated for neuronal recordings. However, especially when dimensions become small, their performance varies strongly. This work investigates the influence of different coatings on thick film gold electrodes with regard to their influence on impedance behavior. PSS layer, titanium oxynitride and laminin coatings are deposited on LTCC gold electrodes using different 2D and 3D MEA chip designs. Their impedance characteristics are compared and discussed. Titanium oxynitride layers emerged as suitable functionalization. Small 86-µm-electrodes have a serial resistance R s of 32 kOhm and serial capacitance C s of 4.1 pF at 1 kHz. Thick film gold electrodes with such coatings are thus qualified for signal recording in 3-dimensional in vitro cell cultures.

  6. Dynamic measurement of liquid film thickness in stratified flow by using ultrasonic echo technique

    International Nuclear Information System (INIS)

    Serizawa, A.; Nagane, K.; Kamei, T.; Kawara, Z.; Ebisu, T.; Torikoshi, K.

    2004-01-01

    We developed a technique to measure time-dependent local film thickness in stratified air-water flow over a horizontal plate by using a time of flight of ultrasonic transmission. The ultrasonic echoes reflected at the liquid/air interfaces are detected by a conventional ultrasonic instrumentation, and the signals are analyzed by a personal computer after being digitalized by an A/D converter to give the time of flight for the ultrasonic waves to run over a distance of twice of the film thickness. A 3.8 mm diameter probe type ultrasonic transducer was used in the present work which transmits and receives 10 MHz frequency ultrasonic waves. The estimated spatial resolution with this arrangement is 0.075 mm in film thickness for water. The time resolution, which depends on both the A/D converter and the memory capacity was up to several tens Hz. We also discussed the sensitivity of the method to the inclination angle of the interfaces. (author)

  7. A reliable control system for measurement on film thickness in copper chemical mechanical planarization system

    Science.gov (United States)

    Li, Hongkai; Qu, Zilian; Zhao, Qian; Tian, Fangxin; Zhao, Dewen; Meng, Yonggang; Lu, Xinchun

    2013-12-01

    In recent years, a variety of film thickness measurement techniques for copper chemical mechanical planarization (CMP) are subsequently proposed. In this paper, the eddy-current technique is used. In the control system of the CMP tool developed in the State Key Laboratory of Tribology, there are in situ module and off-line module for measurement subsystem. The in situ module can get the thickness of copper film on wafer surface in real time, and accurately judge when the CMP process should stop. This is called end-point detection. The off-line module is used for multi-points measurement after CMP process, in order to know the thickness of remained copper film. The whole control system is structured with two levels, and the physical connection between the upper and the lower is achieved by the industrial Ethernet. The process flow includes calibration and measurement, and there are different algorithms for two modules. In the process of software development, C++ is chosen as the programming language, in combination with Qt OpenSource to design two modules' GUI and OPC technology to implement the communication between the two levels. In addition, the drawing function is developed relying on Matlab, enriching the software functions of the off-line module. The result shows that the control system is running stably after repeated tests and practical operations for a long time.

  8. Interfacial coupling in multiferroic/ferromagnet heterostructures

    Science.gov (United States)

    Trassin, M.; Clarkson, J. D.; Bowden, S. R.; Liu, Jian; Heron, J. T.; Paull, R. J.; Arenholz, E.; Pierce, D. T.; Unguris, J.

    2013-04-01

    We report local probe investigations of the magnetic interaction between BiFeO3 films and a ferromagnetic Co0.9Fe0.1 layer. Within the constraints of intralayer exchange coupling in the Co0.9Fe0.1, the multiferroic imprint in the ferromagnet results in a collinear arrangement of the local magnetization and the in-plane BiFeO3 ferroelectric polarization. The magnetic anisotropy is uniaxial, and an in-plane effective coupling field of order 10 mT is derived. Measurements as a function of multiferroic layer thickness show that the influence of the multiferroic layer on the magnetic layer becomes negligible for 3 nm thick BiFeO3 films. We ascribe this breakdown in the exchange coupling to a weakening of the antiferromagnetic order in the ultrathin BiFeO3 film based on our x-ray linear dichroism measurements. These observations are consistent with an interfacial exchange coupling between the CoFe moments and a canted antiferromagnetic moment in the BiFeO3.

  9. Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

    2015-12-15

    Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

  10. MEH-PPV film thickness influenced fluorescent quenching of tip-coated plastic optical fiber sensors

    Science.gov (United States)

    Yusufu, A. M.; Noor, A. S. M.; Tamchek, N.; Abidin, Z. Z.

    2017-12-01

    The performance of plastic optical fiber sensors in detecting nitro aromatic explosives 1,4-dinitrobenzene (DNB) have been investigated by fluorescence spectroscopy and analyzed by using fluorescence quenching technique. The plastic optical fiber utilized is 90 degrees cut tip and dip-coated with conjugated polymer MEH-PPV poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] thin films for detection conjugants. The thicknesses of the MEH-PPV coating were varied to improvise the sensitivity whilst slowly reducing the fluorescence intensity. It was shown that fluorescence intensity from thinner film decreased by (82% in 40 s) in the presence of DNB signifying an improvement of 28% reduction with time 13 s less than that of the thicker film.

  11. The thickness of DLC thin film affects the thermal conduction of HPLED lights

    Science.gov (United States)

    Hsu, Ming Seng; Huang, Jen Wei; Shyu, Feng Lin

    2016-09-01

    Thermal dissipation had an important influence in the quantum effect and life of light emitting diodes (LED) because it enabled heat transfer away from electric devices to the aluminum plate for heat removal. In the industrial processing, the quality of the thermal dissipation was decided by the gumming technique between the PCB and aluminum plate. In this study, we made the ceramic thin films of diamond like carbon (DLC) by vacuum sputtering between the substrate and high power light emitting diodes (HPLED) light to check the influence of heat transfer by DLC thin films. The ceramic dielectric coatings were characterized by several subsequent analyses, especially the measurement of real work temperature of HPLEDs. The X-Ray photoelectron spectroscopy (XPS) patterns revealed that ceramic phases were successfully grown onto the substrate. At the same time, the real work temperatures showed the thickness of DLC thin film coating effectively affected the thermal conduction of HPLEDs.

  12. Narrow thermal hysteresis of NiTi shape memory alloy thin films with submicrometer thickness

    Energy Technology Data Exchange (ETDEWEB)

    Hou, Huilong; Hamilton, Reginald F., E-mail: rfhamilton@psu.edu; Horn, Mark W. [Department of Engineering Science and Mechanics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-09-15

    NiTi shape memory alloy (SMA) thin films were fabricated using biased target ion beam deposition (BTIBD), which is a new technique for fabricating submicrometer-thick SMA thin films, and the capacity to exhibit shape memory behavior was investigated. The thermally induced shape memory effect (SME) was studied using the wafer curvature method to report the stress-temperature response. The films exhibited the SME in a temperature range above room temperature and a narrow thermal hysteresis with respect to previous reports. To confirm the underlying phase transformation, in situ x-ray diffraction was carried out in the corresponding phase transformation temperature range. The B2 to R-phase martensitic transformation occurs, and the R-phase transformation is stable with respect to the expected conversion to the B19′ martensite phase. The narrow hysteresis and stable R-phase are rationalized in terms of the unique properties of the BTIBD technique.

  13. Deposition of SrTiO3 films by electrophoresis with thickness and particle size control

    International Nuclear Information System (INIS)

    Junior, W.D.M.; Pena, A.F.V.; Souza, A.E.; Santos, G.T.A.; Teixeira, S.R.; Senos, A.M.R.; Longo, E.

    2012-01-01

    The SrTiO3 (ST) is a material that exhibits semiconducting characteristics and interesting electrical properties. In room temperature has a structure of high cubic symmetry. The size of the crystallites of this material directly influences this symmetry, changing its network parameters. ST nanoparticles are obtained by hydrothermal method assisted by microwave (MAH). ST films are prepared by electrophoretic deposition (EPD). Approximately 1 g of the powder is dissolved in 100 ml of acetone and 1.5 ml of triethanolamine. The stainless steel substrates are arranged horizontally in the solution. The depositions are performed for 1-10 min and subjected to a potential difference of 20-100 V. The films were characterized by x-ray diffraction (XRD) and atomic force microscopy (AFM). The characterizations show that it is possible to control both the thickness and size of the crystallites of the film depending on the deposition parameters adopted. (author)

  14. Performance Evaluation of an Oxygen Sensor as a Function of the Samaria Doped Ceria Film Thickness

    International Nuclear Information System (INIS)

    Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana; Nachimuthu, Ponnusamy; Engelhard, Mark H.; Shutthanandan, V.; Jiang, Weilin; Thevuthasan, Suntharampillai; Kayani, Asghar N.; Prasad, Shalini

    2010-01-01

    The current demand in the automobile industry is in the control of air-fuel mixture in the combustion engine of automobiles. Oxygen partial pressure can be used as an input parameter for regulating or controlling systems in order to optimize the combustion process. Our goal is to identify and optimize the material system that would potentially function as the active sensing material for such a device that monitors oxygen partial pressure in these systems. We have used thin film samaria doped ceria (SDC) as the sensing material for the sensor operation, exploiting the fact that at high temperatures, oxygen vacancies generated due to samarium doping act as conducting medium for oxygen ions which hop through the vacancies from one side to the other contributing to an electrical signal. We have recently established that 6 atom% Sm doping in ceria films has optimum conductivity. Based on this observation, we have studied the variation in the overall conductivity of 6 atom% samaria doped ceria thin films as a function of thickness in the range of 50 nm to 300 nm at a fixed bias voltage of 2 volts. A direct proportionality in the increase in the overall conductivity is observed with the increase in sensing film thickness. For a range of oxygen pressure values from 1 mTorr to 100 Torr, a tolerable hysteresis error, good dynamic response and a response time of less than 10 seconds was observed

  15. Fe/Ni thin films temperature investigation with MgO and SiO2 interfaces by ferromagnetic resonance

    International Nuclear Information System (INIS)

    Zyubin, A; Orlova, A; Astashonok, A; Kupriyanova, G; Nevolin, V

    2011-01-01

    In this work the temperature study of magnetic – resonance properties of the structures such as Fe/MgO/Ni, Fe/SiO2/Ni differing thickness of spacer and of method of preparation was carried out by FMR. These systems are investigated to estimate their applicability in model creation experiments for a spintronics devices research [1–4]. The special attention was given to the temperature dependence research of three layer films linewidths. The out-of-plane temperature dependences of FMR signal position and line widths have been measured for Fe/Ni samples with MgO and Si/SiO2 interfaces in static position of 0 and 90 degrees rotation angle to the external static magnetic field. The extracted magnetic parameters such as linewidths and resonance field position were studied.

  16. Ab initio analytical model of light transmission through a cylindrical subwavelength hole in an optically thick film

    DEFF Research Database (Denmark)

    Bordo, Vladimir

    2011-01-01

    the film thickness considerably exceeds the hole diameter. It is emphasized that a specific pole corresponding to excitation of surface plasmon polaritons does not appear in the analysis. The theory is illustrated by the calculation of light transmission through a subwavelength hole in an Ag film.......The rigorous analytical theory of light transmission through a cylindrical hole of arbitrary diameter in an optically thick film is developed. The approach is based on the introduction of fictitious surface currents at both hole openings and both film surfaces. The solution of Maxwell’s equations...

  17. Ferrimagnetic Tb-Fe Alloy Thin Films: Composition and Thickness Dependence of Magnetic Properties and All-Optical Switching

    Directory of Open Access Journals (Sweden)

    Birgit eHebler

    2016-02-01

    Full Text Available Ferrimagnetic rare earth - transition metal Tb-Fe alloy thin films exhibit a variety of different magnetic properties, which depends strongly on composition and temperature. In this study, first the influence of the film thickness (5 - 85 nm on the sample magnetic properties was investigated in a wide composition range between 15 at.% and 38 at.% of Tb. From our results, we find that the compensation point, remanent magnetization, and magnetic anisotropy of the Tb-Fe films depend not only on the composition but also on the thickness of the magnetic film up to a critical thickness of about 20-30 nm. Beyond this critical thickness, only slight changes in magnetic properties are observed. This behavior can be attributed to a growth-induced modification of the microstructure of the amorphous films, which affects the short range order. As a result, a more collinear alignment of the distributed magnetic moments of Tb along the out-of-plane direction with film thickness is obtained. This increasing contribution of the Tb sublattice magnetization to the total sample magnetization is equivalent to a sample becoming richer in Tb and can be referred to as an effective composition. Furthermore, the possibility of all-optical switching, where the magnetization orientation of Tb-Fe can be reversed solely by circularly polarized laser pulses, was analyzed for a broad range of compositions and film thicknesses and correlated to the underlying magnetic properties.

  18. Structural, optical and ac electrical characterization of CBD synthesized NiO thin films: Influence of thickness

    Science.gov (United States)

    Das, M. R.; Mukherjee, A.; Mitra, P.

    2017-09-01

    We have studied the electrical conductivity, dielectric relaxation mechanism and impedance spectroscopy characteristics of nickel oxide (NiO) thin films synthesized by chemical bath deposition (CBD) method. Thickness dependent structural, optical and ac electrical characterization has been carried out and deposition time was varied to control the thickness. The material has been characterized using X-ray diffraction and UV-VIS spectrophotometer. Impedance spectroscopy analysis confirmed enhancement of ac conductivity and dielectric constant for films deposited with higher deposition time. Decrease of grain size in thicker films were confirmed from XRD analysis and activation energy of the material for electrical charge hopping process was increased with thickness of the film. Decrease in band gap in thicker films were observed which could be associated with creation of additional energy levels in the band gap of the material. Cole-Cole plot shows contribution of both grain and grain boundary towards total resistance and capacitance. The overall resistance was found to decrease from 14.6 × 105 Ω for 30 min deposited film ( 120 nm thick) to 2.42 × 105 Ω for 120 min deposited film ( 307 nm thick). Activation energy value to electrical conduction process evaluated from conductivity data was found to decrease with thickness. Identical result was obtained from relaxation time approach suggesting hopping mechanism of charge carriers.

  19. Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

    Energy Technology Data Exchange (ETDEWEB)

    Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

    2016-08-15

    Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

  20. Thickness dependence of the electronic properties in V2O3 thin films

    Science.gov (United States)

    Grygiel, C.; Simon, Ch.; Mercey, B.; Prellier, W.; Frésard, R.; Limelette, P.

    2007-12-01

    High quality vanadium sesquioxide V2O3 films (170-1100Å) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties were examined. X-ray diffraction indicates that there is an in-plane compressive lattice parameter (a), close to -3.5% with respect to the substrate and an out-of-plane tensile lattice parameter (c). The thin film samples display metallic character between 2 and 300K, and no metal-to-insulator transition is observed. At low temperature, the V2O3 films behave as a strongly correlated metal, and the resistivity (ρ) follows the equation ρ =ρ0+AT2, where A is the transport coefficient in a Fermi liquid. Typical values of A have been calculated to be 0.14μΩcmK-2, which is in agreement with the coefficient reported for V2O3 single crystals under high pressure. Moreover, a strong temperature dependence of the Hall resistance confirms the electronic correlations of these V2O3 thin film samples.

  1. Characterization of the magnetic properties of NdFeB thick films exposed to elevated temperatures

    Science.gov (United States)

    Fujiwara, Ryogen; Devillers, Thibaut; Givord, Dominique; Dempsey, Nora M.

    2018-05-01

    Hard magnetic films used in magnetic micro-systems may be exposed to elevated temperatures during film and system fabrication and also during use of the micro-system. In this work, we studied the influence of temperature on the magnetic properties of 10 μm thick out-of-plane textured NdFeB films fabricated by high rate triode sputtering. Out-of-plane hysteresis loops were measured in the range 300K - 650K to establish the temperature dependence of coercivity, magnetization at 7 T and remanent magnetization. Thermal demagnetization was measured and magnetization losses were recorded from 350K in films heated under zero or low (-0.1 T) external field and from 325 K for films heated under an external field of -0.5 T. The effect of thermal cycling under zero field on the remanent magnetization was also studied and it was found that cycling between room temperature and 323 K did not lead to any significant loss in remanence at room temperature, while a 4% drop is recorded when the sample is cycled between RT and 343K. Measurement of hysteresis loops at room temperature following exposure to elevated temperatures reveals that while remanent magnetisation is practically recovered in all cases, irreversible losses in coercivity occur (6.7 % following heating to 650K, and 1.3 % following heating to 343K). The relevance of these results is discussed in terms of system fabrication and use.

  2. Processing parameters for ZnO-based thick film varistors obtained by screen printing

    Directory of Open Access Journals (Sweden)

    de la Rubia, M. A.

    2006-06-01

    Full Text Available Thick film varistors based on the ZnO-Bi2O3-Sb2O3 system have been prepared by screen printing on dense alumina substrates. Different processing parameters like the paste viscosity, burn out and sintering cycles, green and sintered thickness, have been studied to improve the processing of ZnO-based thick film varistors. Starting powders were pre-treated in two different ways in order to control both the Bi-rich liquid phase formation and the excessive volatilization of Bi2O3 during sintering due to the high area/volume ratio of the thick films. Significant changes have been observed in the electrical properties related to the different firing schedule and selection of the starting powders.

    Se han preparado varistores basados en el sistema ZnO-Bi2O3-Sb2O3 en forma de lámina gruesa sobre sustratos de alúmina densa. Diferentes parámetros del procesamiento como la viscosidad de la pasta, los ciclos de calcinación y sinterización y el espesor en verde y sinterizado han sido estudiados para mejorar el procesamiento de los varistores basados en ZnO preparados en forma de lámina gruesa. Los polvos de partida fueron pretratados de dos formas diferentes con el objetivo de controlar la formación de la fase líquida rica en bismuto y la excesiva volatilización de Bi2O3 durante la sinterización debida a la alta relación área-volumen de las láminas gruesas. Se han observado cambios significativos en las propiedades eléctricas relacionadas con los diferentes ciclos de calcinado y con la selección de los polvos de partida.

  3. High-Tc Superconducting Thick-Film Spiral Magnet: Development and Characterization of a Single Spiral Module

    National Research Council Canada - National Science Library

    McGinnis, W

    1997-01-01

    The objective of this project was to make characterized and numerically model prototype modules of a new type of superconducting electromagnet based on stacked spirals of superconducting thick films...

  4. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    Energy Technology Data Exchange (ETDEWEB)

    Tang, Kun, E-mail: ktang@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Huang, Shimin [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Gu, Shulin, E-mail: slgu@nju.edu.cn [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Zhu, Shunming [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Ye, Jiandong [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China); Nanjing University Institute of Optoelectronics at Yangzhou, Yangzhou 225009 (China); Xu, Zhonghua; Zheng, Youdou [Nanjing National Laboratory of Microstructures and School of Electronic Science and Engineering, Nanjing University, Nanjing 210023 (China)

    2016-12-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  5. The roles of buffer layer thickness on the properties of the ZnO epitaxial films

    International Nuclear Information System (INIS)

    Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

    2016-01-01

    Highlights: • The growth mechanism has been revealed for the ZnO buffers with different thickness. • The surface morphology has been determined as the key factor to affect the epitaxial growth. • The relation between the hexagonal pits from buffers and epi-films has been established. • The hexagonal pits formed in the epi-films have been attributed to the V-shaped defects inheriting from the dislocations in the buffers. • The structural and electrical properties of the V-defects have been presented and analyzed. - Abstract: In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

  6. Magnetostatics and dynamics of ion irradiatied NiFe/Ta multilayer films studied by vector network analyzer ferromagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Marko, Daniel

    2010-11-25

    In the present work, the implications of ion irradiation on the magnetostatic and dynamic properties of soft magnetic Py/Ta (Py=Permalloy: Ni{sub 80}Fe{sub 20}) single and multilayer films have been investigated with the main objective of finding a way to determine their saturation magnetization. Both polar magneto-optical Kerr effect (MOKE) and vector network analyzer ferromagnetic resonance (VNA-FMR) measurements have proven to be suitable methods to determine {mu}{sub 0}M{sub S}, circumventing the problem of the unknown effective magnetic volume that causes conventional techniques such as SQUID or VSM to fail. Provided there is no perpendicular anisotropy contribution in the samples, the saturation magnetization can be determined even in the case of strong interfacial mixing due to an inherently high number of Py/Ta interfaces and/or ion irradiation with high fluences. Another integral part of this work has been to construct a VNA-FMR spectrometer capable of performing both azimuthal and polar angle-dependent measurements using a magnet strong enough to saturate samples containing iron. Starting from scratch, this comprised numerous steps such as developing a suitable coplanar waveguide design, and writing the control, evaluation, and fitting software. With both increasing ion fluence and number of Py/Ta interfaces, a decrease of saturation magnetization has been observed. In the case of the 10 x Py samples, an immediate decrease of {mu}{sub 0}M{sub S} already sets in at small ion fluences. However, for the 1 x Py and 5 x Py samples, the saturation magnetization remains constant up to a certain ion fluence, but then starts to rapidly decrease. Ne ion irradiation causes a mixing and broadening of the interfaces. Thus, the Py/Ta stacks undergo a transition from being polycrystalline to amorphous at a critical fluence depending on the number of interfaces. The saturation magnetization is found to vanish at a Ta concentration of about 10-15 at.% in the Py layers

  7. Magnetostatics and dynamics of ion irradiatied NiFe/Ta multilayer films studied by vector network analyzer ferromagnetic resonance

    International Nuclear Information System (INIS)

    Marko, Daniel

    2010-01-01

    In the present work, the implications of ion irradiation on the magnetostatic and dynamic properties of soft magnetic Py/Ta (Py=Permalloy: Ni 80 Fe 20 ) single and multilayer films have been investigated with the main objective of finding a way to determine their saturation magnetization. Both polar magneto-optical Kerr effect (MOKE) and vector network analyzer ferromagnetic resonance (VNA-FMR) measurements have proven to be suitable methods to determine μ 0 M S , circumventing the problem of the unknown effective magnetic volume that causes conventional techniques such as SQUID or VSM to fail. Provided there is no perpendicular anisotropy contribution in the samples, the saturation magnetization can be determined even in the case of strong interfacial mixing due to an inherently high number of Py/Ta interfaces and/or ion irradiation with high fluences. Another integral part of this work has been to construct a VNA-FMR spectrometer capable of performing both azimuthal and polar angle-dependent measurements using a magnet strong enough to saturate samples containing iron. Starting from scratch, this comprised numerous steps such as developing a suitable coplanar waveguide design, and writing the control, evaluation, and fitting software. With both increasing ion fluence and number of Py/Ta interfaces, a decrease of saturation magnetization has been observed. In the case of the 10 x Py samples, an immediate decrease of μ 0 M S already sets in at small ion fluences. However, for the 1 x Py and 5 x Py samples, the saturation magnetization remains constant up to a certain ion fluence, but then starts to rapidly decrease. Ne ion irradiation causes a mixing and broadening of the interfaces. Thus, the Py/Ta stacks undergo a transition from being polycrystalline to amorphous at a critical fluence depending on the number of interfaces. The saturation magnetization is found to vanish at a Ta concentration of about 10-15 at.% in the Py layers. The samples possess a small

  8. Superconducting Ferromagnetic Nanodiamond.

    Science.gov (United States)

    Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

    2017-06-27

    Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

  9. Enhanced heat transfer is dependent on thickness of graphene films: the heat dissipation during boiling

    Science.gov (United States)

    Ahn, Ho Seon; Kim, Jin Man; Kim, TaeJoo; Park, Su Cheong; Kim, Ji Min; Park, Youngjae; Yu, Dong In; Hwang, Kyoung Won; Jo, HangJin; Park, Hyun Sun; Kim, Hyungdae; Kim, Moo Hwan

    2014-01-01

    Boiling heat transfer (BHT) is a particularly efficient heat transport method because of the latent heat associated with the process. However, the efficiency of BHT decreases significantly with increasing wall temperature when the critical heat flux (CHF) is reached. Graphene has received much recent research attention for applications in thermal engineering due to its large thermal conductivity. In this study, graphene films of various thicknesses were deposited on a heated surface, and enhancements of BHT and CHF were investigated via pool-boiling experiments. In contrast to the well-known surface effects, including improved wettability and liquid spreading due to micron- and nanometer-scale structures, nanometer-scale folded edges of graphene films provided a clue of BHT improvement and only the thermal conductivity of the graphene layer could explain the dependence of the CHF on the thickness. The large thermal conductivity of the graphene films inhibited the formation of hot spots, thereby increasing the CHF. Finally, the provided empirical model could be suitable for prediction of CHF. PMID:25182076

  10. Effects of surface roughness and film thickness on the adhesion of a bioinspired nanofilm

    Science.gov (United States)

    Peng, Z. L.; Chen, S. H.

    2011-05-01

    Inspired by the gecko's climbing ability, adhesion between an elastic nanofilm with finite length and a rough substrate with sinusoidal roughness is studied in the present paper, considering the effects of substrate roughness and film thickness. It demonstrates that the normal adhesion force of the nanofilm on a rough substrate depends significantly on the geometrical parameters of the substrate. When the film length is larger than the wavelength of the sinusoidal roughness of the substrate, the normal adhesion force decreases with increasing surface roughness, while the normal adhesion force initially decreases then increases if the wavelength of roughness is larger than the film length. This finding is qualitatively consistent with a previously interesting experimental observation in which the adhesion force of the gecko spatula is found to reduce significantly at an intermediate roughness. Furthermore, it is inferred that the gecko may achieve an optimal spatula thickness not only to follow rough surfaces, but also to saturate the adhesion force. The results in this paper may be helpful for understanding how geckos overcome the influence of natural surface roughness and possess such adhesion to support their weights.

  11. Polar orientation of a pendant anionic chromophore in thick layer-by-layer self-assembled polymeric films

    OpenAIRE

    Garg, Akhilesh; Davis, Richey M.; Durak, Cemil; Heflin, James R.; Gibson, Harry W.

    2008-01-01

    Multilayer films with up to 600 bilayers and 740 nm thickness were fabricated using the alternating deposition of poly(allylamine hydrochloride) and poly{1-[p-(3'-carboxy-4'-hydroxyphenylazo)benzenesulfonamido]-1,2-ethand iyl} on glass substrates. Linear relationships for absorbance, thickness, and the square root of the second harmonic intensity versus the number of bilayers demonstrates that the films have long range polar order and optical homogeneity. The deposition conditions (i.e., pH o...

  12. Effects of mechanical properties of polymer on ceramic-polymer composite thick films fabricated by aerosol deposition

    OpenAIRE

    Kwon, Oh-Yun; Na, Hyun-Jun; Kim, Hyung-Jun; Lee, Dong-Won; Nam, Song-Min

    2012-01-01

    Two types of ceramic-polymer composite thick films were deposited on Cu substrates by an aerosol deposition process, and their properties were investigated to fabricate optimized ceramic-based polymer composite thick films for application onto integrated substrates with the advantage of plasticity. When polymers with different mechanical properties, such as polyimide (PI) and poly(methyl methacrylate) (PMMA), are used as starting powders together with α-Al2O3 powder, two types of composite fi...

  13. Planar structured perovskite solar cells by hybrid physical chemical vapor deposition with optimized perovskite film thickness

    Science.gov (United States)

    Wei, Xiangyang; Peng, Yanke; Jing, Gaoshan; Cui, Tianhong

    2018-05-01

    The thickness of perovskite absorber layer is a critical parameter to determine a planar structured perovskite solar cell’s performance. By modifying the spin coating speed and PbI2/N,N-dimethylformamide (DMF) solution concentration, the thickness of perovskite absorber layer was optimized to obtain high-performance solar cells. Using a PbI2/DMF solution of 1.3 mol/L, maximum power conversion efficiency (PCE) of a perovskite solar cell is 15.5% with a perovskite film of 413 nm at 5000 rpm, and PCE of 14.3% was also obtained for a solar cell with a perovskite film of 182 nm thick. It is derived that higher concentration of PbI2/DMF will result in better perovskite solar cells. Additionally, these perovskite solar cells are highly uniform. In 14 sets of solar cells, standard deviations of 11 sets of solar cells were less than 0.50% and the smallest standard deviation was 0.25%, which demonstrates the reliability and effectiveness of hybrid physical chemical vapor deposition (HPCVD) method.

  14. Thickness dependence of the electrical and thermoelectric properties of co-evaporated Sb2Te3 films

    Science.gov (United States)

    Shen, Haishan; Lee, Suhyeon; Kang, Jun-gu; Eom, Tae-Yil; Lee, Hoojeong; Han, Seungwoo

    2018-01-01

    P-type antimony telluride (Sb2Te3) films of various thicknesses (1-, 6-, 10-, and 16-μm) were deposited on an oxidized Si (100) substrate at 250 °C by effusion cell co-evaporation. Microstructural analysis using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy revealed that the grains of the films grew in a mode in which recrystallization was prevalent and grain growth subdued, in contrast to typical film growth, which is often characterized by grain growth. The resultant microstructure exhibited narrow columnar grains, the preferred orientation of which changed with film growth thickness from (1010) with the 1-μm films to (015) for the 6- and 10-μm films, and finally (110) for the 16-μm films. Carrier mobility and the overall thermoelectric properties of the Sb2Te3 films were affected significantly by changes in the film microstructure; this was attributed to the strong anisotropy of Sb2Te3 regarding electrical conductivity. The highest power factor of 3.3 mW/mK2 was observed for the 1-μm-thick Sb2Te3 film.

  15. Determination of the refractive index and thickness of a thin film embedded in a given stratified medium.

    Science.gov (United States)

    Chabrier, G; Goudonnet, J P; Vernier, P

    1989-07-15

    A thin film deposited on the plane face of a glass substrate or a thin film embedded in a known stratified medium can be characterized by nondestructive optical measurements: transmittance and reflectance for several angles of incidence with s and p polarization. We present here a graphic method for determining the complex refractive index and thickness for thin film optical characterization. Light entering into the medium through a prism or half-cylinder [attenuated total reflection (ATR)] extends the usable angles. Applications are made to very thin metallic films and dielectric films (SiO(x)).

  16. Molecular ferromagnetism

    International Nuclear Information System (INIS)

    Epstein, A.J.

    1990-01-01

    This past year has been one of substantial advancement in both the physics and chemistry of molecular and polymeric ferromagnets. The specific heat studies of (DMeFc)(TCNE) have revealed a cusp at the three-dimensional ferromagnetic transition temperature with a crossover to primarily 1-D behavior at higher temperatures. This paper discusses these studies

  17. Evidence for 3D isotropic long range spin-spin interaction near the ferromagnetic transition in bulk and thin film SrRuO3

    Science.gov (United States)

    Sow, Chanchal; Pramanik, A. K.; Kumar, P. S. Anil

    2015-05-01

    In the case of metallic ferromagnets there has always been a controversy, i.e. whether the magnetic interaction is itinerant or localized. For example SrRuO3 is known to be an itinerant ferromagnet where the spin-spin interaction is expected to be mean field in nature. However, it is reported to behave like Ising, Heisenberg or mean field by different groups. Despite several theoretical and experimental studies and the importance of strongly correlated systems, the experimental conclusion regarding the type of spin-spin interaction in SrRuO3 is lacking. To resolve this issue, we have investigated the critical behaviour in the vicinity of the paramagnetic-ferromagnetic phase transition using various techniques on polycrystalline as well as (001) oriented SrRuO3 films. Our analysis reveals that the application of a scaling law in the field-cooled magnetization data extracts the value of the critical exponent only when it is measured at H → 0. To substantiate the actual nature without any ambiguity, the critical behavior is studied across the phase transition using the modified Arrott plot, Kouvel-Fisher plot and M-H isotherms. The critical analysis yields self-consistent β, γ and δ values and the spin interaction follows the long-range mean field model. Further the directional dependence of the critical exponent is studied in thin films and it reveals the isotropic nature. It is elucidated that the different experimental protocols followed by different groups are the reason for the ambiguity in determining the critical exponents in SrRuO3.

  18. Ferromagnetism in reactive sputtered Cu0.96Fe 0.04O1-δ nanocrystalline films evidenced by anomalous Hall effect

    KAUST Repository

    Mi, Wenbo

    2011-03-14

    Cu0.96Fe0.04O1-δ nanocrystalline films were fabricated using reactive sputtering at different oxygen partial pressures (PO2). The electrical transport properties of the films were measured in a broad temperature range (10-300 K) under magnetic fields of up to 5T. Anomalous Hall effect (AHE) of up to 0.4μΩ cm was observed at 10 K and decreased to 0.2μΩ cm at 300 K. The characteristic AHE clearly indicated the existence of ferromagnetism in these materials. The AHE weakened as PO2 increased because the increasing PO2 reduced the fraction of Fe2+ ions, and consequently weakened the double exchange coupling between Fe2+-O2--Cu2+ in the materials. © 2011 The Japan Society of Applied Physics.

  19. Method for determining the optical constants of thin dielectric films with variable thickness using only their shrunk reflection spectra

    International Nuclear Information System (INIS)

    Ruiz-Perez, J.J.; Gonzalez-Leal, J.M.; Marquez, E.; Minkov, D.A.

    2001-01-01

    Thickness inhomogeneities in thin films have a large influence on their optical transmission and reflection spectra. If not taken into account, this may lead to rather large calculated values for the absorption coefficient or the erroneous presence of an absorption-band tail, as well as to significant errors in the calculated values of the refractive index and the film thickness. The effect of thickness variation on the optical reflection spectrum of a thin dielectric film covering a thick non-absorbing substrate, is analysed in detail in this paper, and analytical expressions are presented for such a reflection spectrum and its upper and lower envelopes. A method is suggested for determining the refractive index n(λ) and the extinction coefficient k(λ), as well as the average thickness and the thickness variation, of a thin dielectric film with variable thickness, by using only the two envelopes of the corresponding shrunk reflection spectrum. This method is used for the geometrical and optical characterization of thermally-evaporated amorphous chalcogenide films, deposited on glass substrates. (author)

  20. Analysis of thickness-dependent optical parameters of a-Si:H/nc-Si:H multilayer thin films

    Directory of Open Access Journals (Sweden)

    Ashok Kherodia

    2017-10-01

    Full Text Available Abstract Multilayer thin films with alternate hydrogenated amorphous (a-Si:H and nanocrystalline silicon (nc-Si:H layers are deposited in hot wire chemical vapor deposition (HWCVD chamber using hydrogen (H2 dilution of silane (SiH4. Two sets (two samples for each set have different nc-Si:H layer thickness with the same a-Si:H thickness. The transmittance spectra, refractive index and absorption coefficient are obtained using UV–Vis spectroscopy. An analysis of Tauc plot suggests thickness-dependent optical band gap shift. The films with thick nc-Si:H layers show a decrease in band gap from 1.78 to 1.68 eV, whereas the films with lower nc-Si:H layer thickness have an increased band gap from 1.64 to 1.72 eV. Further, the slope of the Tauc plot (B and disorder indicator (Urbach energy, E u show that the films with thick nc-Si:H layers are poorly ordered as hydrogen dilution increases. These results illustrate that band gap shift can be attributed to the crystal size effect and film disorder. This shifting of optical band gap with the nc-Si:H layer thickness is useful in tuning of the absorber layer band gap which finds an application in photovoltaics.

  1. Gold nanoparticle plasmon resonance in near-field coupled Au NPs layer/Al film nanostructure: Dependence on metal film thickness

    Science.gov (United States)

    Yeshchenko, Oleg A.; Kozachenko, Viktor V.; Naumenko, Antonina P.; Berezovska, Nataliya I.; Kutsevol, Nataliya V.; Chumachenko, Vasyl A.; Haftel, Michael; Pinchuk, Anatoliy O.

    2018-05-01

    We study the effects of coupling between plasmonic metal nanoparticles and a thin metal film by using light extinction spectroscopy. A planar monolayer of gold nanoparticles located near an aluminum thin film (thicknesses within the range of 0-62 nm) was used to analyze the coupling between the monolayer and the thin metal film. SPR peak area increase for polymer coated Au NPs, non-monotonical behavior of the peak area for bare Au NPs, as well as red shift and broadening of SPR at the increase of the Al film thickness have been observed. These effects are rationalized as a result of coupling of the layer of Au NPs with Al film through the field of localized surface plasmons in Au NPs that causes the excitation of collective plasmonic gap mode in the nanostructure. An additional mechanism for bare Au NPs is the non-radiative damping of SPR that is caused by the electrical contact between metal NPs and film.

  2. Theory of strain-controlled magnetotransport and stabilization of the ferromagnetic insulating phase in manganite thin films.

    Science.gov (United States)

    Mukherjee, Anamitra; Cole, William S; Woodward, Patrick; Randeria, Mohit; Trivedi, Nandini

    2013-04-12

    We show that applying strain on half-doped manganites makes it possible to tune the system to the proximity of a metal-insulator transition and thereby generate a colossal magnetoresistance (CMR) response. This phase competition not only allows control of CMR in ferromagnetic metallic manganites but can be used to generate CMR response in otherwise robust insulators at half-doping. Further, from our realistic microscopic model of strain and magnetotransport calculations within the Kubo formalism, we demonstrate a striking result of strain engineering that, under tensile strain, a ferromagnetic charge-ordered insulator, previously inaccessible to experiments, becomes stable.

  3. Microstructure and thermoelectric properties of screen-printed thick-films of misfit-layered cobalt oxides with Ag addition

    DEFF Research Database (Denmark)

    Van Nong, Ngo; Samson, Alfred Junio; Pryds, Nini

    2012-01-01

    Thermoelectric properties of thick (~60 μm) films prepared by a screen-printing technique using p-type misfit-layered cobalt oxide Ca3Co4O9+δ with Ag addition have been studied. The screen-printed films were sintered in air at various temperatures ranging from 973 K to 1223 K. After each sintering...

  4. Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

    International Nuclear Information System (INIS)

    Semler, Matthew R.; Swenson, Orven F.; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R.; Hobbie, Erik K.

    2014-01-01

    We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films

  5. Infrared absorption study of hydrogen incorporation in thick nanocrystalline diamond films

    International Nuclear Information System (INIS)

    Tang, C.J.; Neves, A.J.; Carmo, M.C.

    2005-01-01

    We present an infrared (IR) optical absorbance study of hydrogen incorporation in nanocrystalline diamond films. The thick nanocrystalline diamond films were synthesized by microwave plasma-assisted chemical vapor deposition and a high growth rate about 3.0 μm/h was achieved. The morphology, phase quality, and hydrogen incorporation were assessed by means of scanning electron microscopy, Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Large amount of hydrogen bonded to nanocrystalline diamond is clearly evidenced by the huge CH stretching band in the FTIR spectrum. The mechanism of hydrogen incorporation is discussed in light of the growth mechanism of nanocrystalline diamond. This suggests the potential of nanocrystalline diamond for IR electro-optical device applications

  6. Coupling effects in bilayer thick metal films perforated with rectangular nanohole arrays

    Directory of Open Access Journals (Sweden)

    Li Yuan

    2013-09-01

    Full Text Available The coupling effects in bilayer thick metal (silver films perforated with rectangular nanohole arrays are investigated using the finite-difference time-domain technique. Many interesting light phenomena are observed as the distance between the metal rectangular nanohole arrays varies. Coupling effects are found to play very important roles on the optical and electronic properties of bilayer metal rectangular nanohole arrays: antisymmetric coupling between surface plasmon polaritons near the top and bottom film plane, and antisymmetric coupling between localized surface plasmon resonances near the two long sides of the rectangular hole, are probably excited in each layer of bilayer metal rectangular nanohole arrays; antisymmetric and symmetric magnetic coupling probably occur between the metal rectangular nanohole arrays.

  7. Wet Chemical Synthesis and Screening of Thick Porous Oxide Films for Resistive Gas Sensing Applications

    Directory of Open Access Journals (Sweden)

    Wilhelm F. Maier

    2006-11-01

    Full Text Available A method of wet chemical synthesis suitable for high throughput and combinatorial applications has been developed for the synthesis of porous resistive thick-film gas sensors. This method is based on the robot-controlled application of unstable metal oxide suspensions on an array of 64 inter-digital electrodes positioned on an Al2O3 substrate. SnO2, WO3, ZrO2, TiO2, CeO2, In2O3 and Bi2O3 were chosen as base oxides, and were optimised by doping or mixed oxide formation. The parallel synthesis of mixed oxide sensors is illustrated by representative examples. The electrical characteristics and the sensor performance of the films were measured by high-throughput impedance spectroscopy while supplying various test gases (H2, CO, NO, NO2, propene. Data collection, data mining techniques applied and the best potential sensor materials discovered are presented.

  8. 100-nm thick single-phase wurtzite BAlN films with boron contents over 10%

    KAUST Repository

    Li, Xiaohang

    2017-01-11

    Growing thicker BAlN films while maintaining single-phase wurtzite structure and boron content over 10% has been challenging. In this study, we report on the growth of 100 nm-thick single-phase wurtzite BAlN films with boron contents up to 14.4% by MOCVD. Flow-modulated epitaxy was employed to increase diffusion length of group-III atoms and reduce parasitic reactions between the metalorganics and NH3. A large growth efficiency of ∼2000 μm mol−1 was achieved as a result. Small B/III ratios up to 17% in conjunction with high temperatures up to 1010 °C were utilized to prevent formation of the cubic phase and maintain wurtzite structure.

  9. Alignment of muscle precursor cells on the vertical edges of thick carbon nanotube films

    Energy Technology Data Exchange (ETDEWEB)

    Holt, Ian, E-mail: ian.holt@rjah.nhs.uk [Wolfson Centre for Inherited Neuromuscular Disease, RJAH Orthopaedic Hospital, Oswestry, Shropshire SY10 7AG (United Kingdom); Institute for Science and Technology in Medicine, Keele University, Keele, Staffordshire ST5 5BG (United Kingdom); Gestmann, Ingo, E-mail: Ingo.Gestmann@fei.com [FEI Europe B.V., Achtseweg Noord 5, 5651 Eindhoven (Netherlands); Wright, Andrew C., E-mail: a.wright@glyndwr.ac.uk [Advanced Materials Research Laboratory, Glyndwr University, Plas Coch, Mold Rd, Wrexham LL11 2AW (United Kingdom)

    2013-10-15

    The development of scaffolds and templates is an essential aspect of tissue engineering. We show that thick (> 0.5 mm) vertically aligned carbon nanotube films, made by chemical vapour deposition, can be used as biocompatible substrates for the directional alignment of mouse muscle cells where the cells grow on the exposed sides of the films. Ultra high resolution scanning electron microscopy reveals that the films themselves consist mostly of small diameter (10 nm) multi-wall carbon nanotubes of wavy morphology with some single wall carbon nanotubes. Our findings show that for this alignment to occur the nanotubes must be in pristine condition. Mechanical wiping of the films to create directional alignment is detrimental to directional bioactivity. Larger areas for study have been formed from a composite of multiply stacked narrow strips of nanotubes wipe-transferred onto elastomer supports. These composite substrates appear to show a useful degree of alignment of the cells. Highlights: • Highly oriented muscle precursor cells grown on edges of carbon nanotube pads • Mechanical treatment of nanotube pads highly deleterious to cell growth on edges • Larger areas created from wipe-transfer of narrow strips of nanotubes onto elastomer supports • Very high resolution SEM reveals clues to aligned cell growth.

  10. Nanomechanical testing of circular freestanding polymer films with sub-micron thickness

    International Nuclear Information System (INIS)

    Maner, Kyle C.; Begley, Matthew R.; Oliver, Warren C.

    2004-01-01

    This paper describes techniques to create freestanding films over perfectly circular spans (windows) and measure their mechanical properties using instrumented nanoindentation. Test samples were created by spin-casting polymer films over glass plates with embedded fibers, which were subsequently etched using a relatively weak acid to leave freestanding circular spans. The freestanding spans were tested using an instrumented nanoindenter over a wide range of applied loads and displacements. Material properties can be extracted from measured load-deflection responses using straightforward models for point-loads on circular plates or membranes. Results are presented for poly(methyl methacrylate) and poly(2,6,dimethyl,1,4,phenylene ether) films with thickness ranging from 350 to 750 nm. The properties derived from freestanding tests are compared with traditional nanoindentation of films on intact substrates. The freestanding approach has key advantages for characterizing micron-scale behavior of compliant materials, notably greater ease and applicability of sample preparation over other micro-fabrication techniques and straightforward analytical or numerical models

  11. Investigation of thickness dependent composition of boron carbide thin films by resonant soft x-ray reflectivity

    OpenAIRE

    Rao, P. N.; Gupta, R. K.; Saravanan, K.; Bose, A.; Joshi, S. C.; Ganguli, T.; Rai, S. K.

    2017-01-01

    Boron carbide thin films of different thicknesses deposited by ion beam sputtering were studied. The deposited films were characterized by grazing incidence hard x-ray reflectivity (GIXR), resonant soft x-ray reflectivity (RSXR), x-ray photo electron spectroscopy (XPS), resonant Rutherford backscattering spectrometry (RRBS), and time of flight secondary ion mass spectrometry (TOF-SIMS). An in-depth profile of the chemical elements constitute the films is reconstructed based on analysis of ref...

  12. Measurement of thickness of thin films by the X-ray diffraction method

    International Nuclear Information System (INIS)

    Srinivasan, C.; Balasingh, C.; Singh, A.K.

    1979-07-01

    X-ray diffraction method can be used to measure the thickness of thin films (coatings). The principle and the experimental details of the x-ray diffraction methods are described. The intensities of the diffracted beams are derived assuming a random orientation of the crystallites in the diffracting medium. Consequently, the expressions are not valid when the sample has preferred orientation. To check the performance of the method, thicknesses of nickel deposits on mild steel plates were determined by the x-ray diffraction method and the results compared with those obtained by the weighing method and metallographic examination. The weighing method which gives an accuracy of +- 0.1 micron is taken as the standard. The x-ray diffraction methods and the metallographic examinations give values within +- 1 micron of the value obtained by the weighing method. (author)

  13. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, R.; Lei, A.; Christiansen, T. L.

    2011-01-01

    We present a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The most common piezoelectric energy harvesting devices utilize a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric material....... It provides mechanical support but it also reduces the power output. Our device replaces the support with another layer of the piezoelectric material, and with the absence of an inactive mechanical support all of the stresses induced by the vibrations will be harvested by the active piezoelectric elements....

  14. Screen printed PZT/PZT thick film bimorph MEMS cantilever device for vibration energy harvesting

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We present a microelectromechanical system (MEMS) based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. Most piezoelectric energy harvesting devices use a cantilever beam of a non piezoelectric material as support beneath or in-between the piezoelectric...... materials; it provides mechanical support but it also reduces the power output. In our device we replace the support material with another layer of the piezoelectric material. With the absence of an inactive mechanical support all stresses induced by vibrations will be harvested by the active piezoelectric...

  15. Analysis of electromigration phenomenon in thick-film and LTCC structures at elevated temperature

    Science.gov (United States)

    Nowak, Damian; Stafiniak, Andrzej; Dziedzic, Andrzej

    2014-06-01

    Studies on electromigration phenomenon in thick-film structures on alumina and LTCC substrates are presented in this paper. The effects of storage of Au and Ag electrode patterns in temperature range up to 300 °C under voltage bias were examined. The leakage characteristics of electrodes with 100 μm spacing at 50 V dc bias as a function of time and temperature are presented and analyzed. Scanning electron microscope (SEM) equipped with the energy-dispersive X-ray spectroscopy (EDX) detector was applied for determination of metal ions transport. Test structures with Au-based conductive material are much more resistant to electromigration than Ag-based layers.

  16. Detection of nitrogen dioxide using mixed tungsten oxide-based thick film semiconductor sensor.

    Science.gov (United States)

    Su, P-G; Ren-Jang, Wu; Fang-Pei, Nieh

    2003-03-10

    The thick film semiconductor sensor for NO(2) gas detection was fabricated by screen-printing method using a mixed WO(3)-based as sensing material. The sensing characteristics, such as response time, response linearity, sensitivity, working range, cross sensitivity, and long-term stability were further studied by using a WO(3)-based mixed with different metal oxides (SnO(2), TiO(2) and In(2)O(3)) and doped with noble metals (Au, Pd and Pt) as sensing materials was observed. The highest sensitivity for low concentrations (SnO(2)-Au as sensing material.

  17. Thick film nickel plating - the alternative. Long-term experiences; Dickschichtvernickelung - die Alternative. Langzeiterfahrungen

    Energy Technology Data Exchange (ETDEWEB)

    Senff-Wollenberg, Ralf [Baumgarte Boiler Systems GmbH, Bielefeld (Germany). Technik; Ansey, Johann-Wilhelm [Baumgarte Boiler Systems GmbH, Bielefeld (Germany). Forschung und Entwicklung; Reinmoeller, Frank [Baumgarte Boiler Systems GmbH, Bielefeld (Germany)

    2013-03-01

    The ecologic and energetic demands on modern plants fort he thermal utilization of waste materials increase continuously. Beside low costs of investment, enhanced efficiencies, an enhanced availability, long journey times as well as low costs of operation and maintenance are important factors for the investment decision. The primary and secondary measures for the shrinkage of corrosion are decisive for achieving the factors for the decision of investment and maintenance. The authors of the contribution under consideration report on long-term experiences on the thick film nickel plating. Especially, the process of galvanic nickel plating, the fields of application as well as the operational experiences are described.

  18. Measurement of oil film thickness and friction force on a guide shoe bearing

    DEFF Research Database (Denmark)

    Vølund, Anders

    2002-01-01

    An experimental program was carried out in order to reveal oil film thickness, and friction force of the guide shoe bearing of a large two stroke marine diesel engine. The experiment was conducted on a full size engine located at the research facility at MAN B&W Diesel A/S. The experiment...... was conducted such that the influence from the experiment on the characteristics were as small as possible. The objective of the experiment was to determine the frictional loss of this bearing and to check whether a suggested numerical model was applicable or not. Some future aspects for this bearing...

  19. The effect of zinc thickness on corrosion film breakdown of Colombian galvanized steel

    Science.gov (United States)

    Sandoval-Amador, A.; E Torres Ramirez, J.; Cabrales-Villamizar, P. A.; Laverde Cataño, D.; Y Peña-Ballesteros, D.

    2017-12-01

    This work studies the corrosion behaviour of Colombian galvanized steel in solutions of chloride and sulphate ions. The effect of the thickness and exposure time on the film’s breakdown susceptibility and protectiveness of the corrosion products were studied using potentiodynamic polarization curves and electrochemical impedance spectroscopy. The corrosion products were analysed using SEM-EDS and XRD. The samples with a higher thickness level in the zinc film (Z180) have the lowest corrosion rate. In this case, one of the products that was formed by the chemical reactions that occurred was Zinc hydroxide, which exhibits a passive behaviour as observed in the Pourbaix curves of the obtained potentials and in how the different Ph levels of the solutions worked. The sheets with the highest thickness (Z180) had the best performance, since at the end of the study they showed the least amount of damage on the surface of the zinc layer. This is because the thickness of the zinc layer favours the formation of simonkolleite, which is the corrosion product that protects the material under the conditions of the study.

  20. LPG and NH3 Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen Printing Technique

    OpenAIRE

    A. S. GARDE

    2010-01-01

    The gas sensing behavior of SnO2 thick film resistors deposited on alumina substrates has been investigated for LPG and NH3 gas. The standard screen printing technology was used to prepare the thick films. The films were fired at optimized temperature of 780 0C for 30 minutes. The material characterization was performed by XRD, SEM, FTIR, UV and EDAX for elemental analysis. IR spectroscopy analysis at 2949.26 cm-1 showed the peak assigned to the –Sn-H vibration due to the effect of hybridizat...

  1. Design of instantaneous liquid film thickness measurement system for conductive or non-conductive fluid with high viscosity

    Directory of Open Access Journals (Sweden)

    Yongxin Yu

    2017-06-01

    Full Text Available In the paper, a new capacitive sensor with a dielectric film coating was designed to measure the thickness of the liquid film on a flat surface. The measured medium can be conductive or non-conductive fluid with high viscosity such as silicone oil, syrup, CMC solution and melt. With the dielectric film coating, the defects caused by the humidity in a capacitor can be avoided completely. With a excitation frequency 0-20kHz, the static permittivity of capacitive sensor is obtained and stable when small thicknesses are monitored within the frequency of 0-3kHz. Based on the measurement principle, an experimental system was designed and verified including calibration and actual measurement for different liquid film thickness. Experimental results showed that the sensitivity, the resolution, repeatability and linear range of the capacitive sensor are satisfied to the liquid film thickness measurement. Finally, the capacitive measuring system was successfully applied to the water, silicone oil and syrup film thickness measurement.

  2. Influences of layer thickness on the compatibility and physical properties of polycarbonate/polystyrene multilayered film via nanolayer coextrusion

    Science.gov (United States)

    Cheng, Junfeng; Chen, Zhiru; Zhou, Jiaqi; Cao, Zheng; Wu, Dun; Liu, Chunlin; Pu, Hongting

    2018-05-01

    The effects of layer thickness on the compatibility between polycarbonate (PC) and polystyrene (PS) and physical properties of PC/PS multilayered film via nanolayer coextrusion are studied. The morphology of multilayered structure is observed using a scanning electron microscope. This multilayered structure may have a negative impact on the transparency, but it can improve the water resistance and heat resistance of film. To characterize the compatibility between PC and PS, differential scanning calorimetry is used to measure the glass transition temperature. The compatibility is found to be improved with the decrease of layer thickness. Therefore, the viscosity of multilayered film is also reduced with the decrease of layer thickness. In addition, the multilayered structure can improve the tensile strength with the increase of layer numbers. Because of the complete and continuous layer structure of PC, the PC/PS multilayered film can retain its mechanical strength at the temperature above Tg of PS.

  3. Magnetization and flux creep in thin YBa2Cu3O7-δ films of various thickness

    International Nuclear Information System (INIS)

    Sheriff, E.; Prozorov, R.; Yeshurun, Y.; Shaulov, A.; Koren, G.; Chabaud-Villard, C.

    1997-01-01

    We report on the thickness dependence of the irreversible magnetization in superconducting Y 1 Ba 2 Cu 3 O 7-δ films of thickness 350 endash 3000 Angstrom. Our results reveal a nonmonotonous dependence of the persistent current density j on the film thickness, which is interpreted in terms of surface pinning and variations in the surface microstructure. Measurements of the time dependence of j show that under certain conditions relaxation curves of samples of different thickness cross each other, i.e., the sample with initially larger j exhibits after some time a lower j. The crossing point is shifted to shorter times as the temperature is increased. We propose a simple explanation to this effect and discuss its practical implications. Low dose heavy ion irradiation of the films has a modest effect on j and on the rate of its relaxation. copyright 1997 American Institute of Physics

  4. 31-mode piezoelectric micromachined ultrasonic transducer with PZT thick film by granule spraying in vacuum process

    Science.gov (United States)

    Jung, Joontaek; Annapureddy, Venkateswarlu; Hwang, Geon-Tae; Song, Youngsup; Lee, Wonjun; Kang, Woojin; Ryu, Jungho; Choi, Hongsoo

    2017-05-01

    A piezoelectric micromachined ultrasonic transducer (pMUT) is an ideal device for portable medical diagnosis systems, intravascular ultrasound systems, and ultrasonic cameras because of its favorable characteristics including small size, acoustic impedance matching with the body, low power consumption, and simple integration with the systems. Despite these advantages, practical applications are limited because of insufficient acoustic pressure of the pMUT caused by the thin active piezoelectric layer. Here, we report the fabrication of a thick piezoelectric Pb(Zr,Ti)O3 (PZT) film-based pMUT device having high deflection at low driving voltage using the granule spraying in vacuum (GSV) process. Pre-patterned high-density thick (exceeding 8 μm) PZT films were grown on 6-inch-diameter Si/SiO2/Ti/Pt silicon-on-insulator wafers at room temperature at a high deposition rate of ˜5 μm min-1. The fabrication process using the proposed GSV process was simple and fast, and the deflection of the pMUT exhibited a high value of 0.8 μm.

  5. Surface study and thickness control of thin Al2O3 film on Cu-9%Al(111) single crystal

    International Nuclear Information System (INIS)

    Yamauchi, Yasuhiro; Yoshitake, Michiko; Song Weijie

    2004-01-01

    We were successful in growing a uniform flat Al 2 O 3 film on the Cu-9%Al(111) surface using the improved cleaning process, low ion energy and short time sputtering. The growth of ultra-thin film of Al 2 O 3 on Cu-9%Al was investigated using Auger electron spectroscopy (AES) and a scanning electron microscope (SEM). The Al 2 O 3 film whose maximum thickness was about 4.0 nm grew uniformly on the Cu-9%Al surface. The Al and O KLL Auger peaks of Al 2 O 3 film shifted toward low kinetic energy, and the shifts were related to Schottky barrier formation and band bending at the Al 2 O 3 /Cu-9%Al interface. The thickness of Al 2 O 3 film on the Cu-9%Al surface was controlled by the oxygen exposure

  6. Origin of thickness dependence of structural phase transition temperatures in highly strained BiFeO3 thin films

    Directory of Open Access Journals (Sweden)

    Yongsoo Yang

    2016-03-01

    Full Text Available Two structural phase transitions are investigated in highly strained BiFeO3 thin films as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA to tetragonal decrease as the film becomes thinner. A film-substrate interface layer, evidenced by half-order peaks, contributes to this behavior, but at larger thicknesses (above a few nanometers, the temperature dependence results from electrostatic considerations akin to size effects in ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase. For ultra-thin films, the tetragonal structure is stable to low temperatures.

  7. Structural and magnetic properties of Co−Ti substituted barium hexaferrite thick films

    Energy Technology Data Exchange (ETDEWEB)

    Verma, Samiksha; Pandey, O.P. [School of Physics and Materials Science, Thapar University Patiala, 147004, Punjab (India); Paesano, Andrea [Departamento de Física, Universidade Estadual de Maringá, Av. Colombo, 5790, Maringá (Brazil); Sharma, Puneet, E-mail: puneet.sharma@thapar.edu [School of Physics and Materials Science, Thapar University Patiala, 147004, Punjab (India)

    2016-09-05

    Co−Ti substituted M-type barium hexaferrite BaFe{sub 12-2x}Co{sub x}Ti{sub x}O{sub 19} (0.0 ≤ x ≤ 1.0) thick films were prepared by screen printing method. X-ray diffraction analysis confirmed the formation of single phase BaFe{sub 12}O{sub 19} (BaM). The preferential site occupation of Co{sup 2+} and Ti{sup 4+} ion for Fe{sup 3+} ion at five different crystallographic sites (12k, 4f{sub 1}, 4f{sub 2}, 2a, and 2b) was measured by Mössbauer spectroscopy. The analyses showed Co−Ti ions preferentially occupy 2b and 4f{sub 2} sites which were responsible for drastic decrease in magnetocrystalline anisotropy field (H{sub a}). Magnetization (M) value found to be higher for x = 0.5. The coercivity (H{sub c}) dropped dramatically, recording a reduction of about 95% at x = 1.0, attributed to decreased in H{sub a}. SEM micrographs of Co−Ti substituted films revealed hexagonal grain structure. The magnetic properties of Co−Ti substituted BaM, suggests a possible candidate for microwave applications. - Highlights: • Single phase Co−Ti substituted BaM thick films are prepared from screen printing method. • The effect of Co−Ti substitution on structural and magnetic properties is studied. • Mössbauer spectroscopy illustrate, Co−Ti ions are preferentially occupy 2b and 4f{sub 2} sites. • Drastic decrease in magnetocrystalline anisotropy (H{sub a}) and (H{sub c}) is observed.

  8. Synthesis and Characterization of Vanadium Doped Zinc Oxide Thick Film for Chemical Sensor Application

    Directory of Open Access Journals (Sweden)

    Rayees Ahmad Zargar

    2015-01-01

    Full Text Available Zinc oxide and vanadium pentoxide nanoparticles derived by chemical coprecipitation route were used to cast Zn0.96V0.04O thick film by screen printing method. The structural, morphological, optical, and electrical properties of the film were characterized by powder XRD, SEM, Raman, UV-VIS, and DC conductivity techniques. XRD pattern, SEM image, and Raman spectrum of the film confirm the single phase formation of Wurtzite structure with preferential orientation along [101] plane, minor variation in lattice parameters, and vanadium ions substitution at zinc sites. Zn0.96V0.04O pellet has been used for sensing ammonia vapor concentrations in 20–50°C temperature range which exhibits maximum responsiveness and sensitivity at 30°C. The minor variations in resistance are observed with ammonia vapor concentration. The adsorption of ammonia vapors through weak hydrogen bonding and its insertion into lattice by nitrogen lone pairs donation at vacant/defect sites in lattice caused by vanadium doping are considered to explain gas sensing mechanism.

  9. Water-in-model oil emulsions studied by small-angle neutron scattering: interfacial film thickness and composition.

    Science.gov (United States)

    Verruto, Vincent J; Kilpatrick, Peter K

    2008-11-18

    The ever-increasing worldwide demand for energy has led to the upgrading of heavy crude oil and asphaltene-rich feedstocks becoming viable refining options for the petroleum industry. Traditional problems associated with these feedstocks, particularly stable water-in-petroleum emulsions, are drawing increasing attention. Despite considerable research on the interfacial assembly of asphaltenes, resins, and naphthenic acids, much about the resulting interfacial films is not well understood. Here, we describe the use of small-angle neutron scattering (SANS) to elucidate interfacial film properties from model emulsion systems. Modeling the SANS data with both a polydisperse core/shell form factor as well as a thin sheet approximation, we have deduced the film thickness and the asphaltenic composition within the stabilizing interfacial films of water-in-model oil emulsions prepared in toluene, decalin, and 1-methylnaphthalene. Film thicknesses were found to be 100-110 A with little deviation among the three solvents. By contrast, asphaltene composition in the film varied significantly, with decalin leading to the most asphaltene-rich films (30% by volume of the film), while emulsions made in toluene and methylnaphthalene resulted in lower asphaltenic contents (12-15%). Through centrifugation and dilatational rheology, we found that trends of decreasing water resolution (i.e., increasing emulsion stability) and increasing long-time dilatational elasticity corresponded with increasing asphaltene composition in the film. In addition to the asphaltenic composition of the films, here we also deduce the film solvent and water content. Our analyses indicate that 1:1 (O/W) emulsions prepared with 3% (w/w) asphaltenes in toluene and 1 wt % NaCl aqueous solutions at pH 7 and pH 10 resulted in 80-90 A thick films, interfacial areas around 2600-3100 cm (2)/mL, and films that were roughly 25% (v/v) asphaltenic, 60-70% toluene, and 8-12% water. The increased asphaltene and water film

  10. Thickness controlled sol-gel silica films for plasmonic bio-sensing devices

    Energy Technology Data Exchange (ETDEWEB)

    Figus, Cristiana, E-mail: cristiana.figus@dsf.unica.it; Quochi, Francesco, E-mail: cristiana.figus@dsf.unica.it; Artizzu, Flavia, E-mail: cristiana.figus@dsf.unica.it; Saba, Michele, E-mail: cristiana.figus@dsf.unica.it; Marongiu, Daniela, E-mail: cristiana.figus@dsf.unica.it; Mura, Andrea; Bongiovanni, Giovanni [Dipartimento di Fisica - University of Cagliari, S.P. Km 0.7, I-09042 Monserrato (Canada) (Italy); Floris, Francesco; Marabelli, Franco; Patrini, Maddalena; Fornasari, Lucia [Dipartimento di Fisica - University of Pavia, Via Agostino Bassi 6, I-27100 Pavia (PV) (Italy); Pellacani, Paola; Valsesia, Andrea [Plasmore S.r.l. -Via Grazia Deledda 4, I-21020 Ranco (Vatican City State, Holy See) (Italy)

    2014-10-21

    Plasmonics has recently received considerable interest due to its potentiality in many fields as well as in nanobio-technology applications. In this regard, various strategies are required for modifying the surfaces of plasmonic nanostructures and to control their optical properties in view of interesting application such as bio-sensing, We report a simple method for depositing silica layers of controlled thickness on planar plasmonic structures. Tetraethoxysilane (TEOS) was used as silica precursor. The control of the silica layer thickness was obtained by optimizing the sol-gel method and dip-coating technique, in particular by properly tuning different parameters such as pH, solvent concentration, and withdrawal speed. The resulting films were characterized via atomic force microscopy (AFM), Fourier-transform (FT) spectroscopy, and spectroscopic ellipsometry (SE). Furthermore, by performing the analysis of surface plasmon resonances before and after the coating of the nanostructures, it was observed that the position of the resonance structures could be properly shifted by finely controlling the silica layer thickness. The effect of silica coating was assessed also in view of sensing applications, due to important advantages, such as surface protection of the plasmonic structure.

  11. Annealing and thickness effects on magnetic properties of Co2FeAl alloy films

    Science.gov (United States)

    Wang, Ke; Xu, Zhan; Ling, Fujin; Wang, Yahong; Dong, Shuo

    2018-03-01

    Co2FeAl (CFA) films in a wide thickness range between 2 and 100 nm are sputtered at room temperature. Perpendicular magnetic anisotropy (PMA) is achieved in the annealed structure of Pd/CFA/MgO with CFA thickness ranging between 2.3 and 4.9 nm. PMA as high as 2 × 106 erg/cm3 is demonstrated in the structures annealed in the temperature range between 300 and 350 °C. Positive contributions to the PMA made by the interfaces of Pd/CFA and CFA/MgO are identified. For the as-deposited structure of MgO/CFA/Ta with thick CFA alloy up to 5 nm or above a high effective saturation magnetization of 983.9 ± 30.1 emu/cc is derived from the fitting and an in-plane uniaxial magnetic anisotropy of 104 erg/cm3 in magnitude is revealed by angular dependent magnetic measurements. In addition to the increase in saturation magnetization, a fourfold cubic magnetic anisotropy is found to develop with annealing, in line with the improvement of the crystalline structure confirmed by X-ray diffraction measurements. Out results provide some useful information for the design of the CFA-based magnetoelectronic devices.

  12. Effect of Cr addition on the structural, magnetic and mechanical properties of magnetron sputtered Ni-Mn-In ferromagnetic shape memory alloy thin films

    Energy Technology Data Exchange (ETDEWEB)

    Akkera, Harish Sharma [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Lab, Department of Physics, Roorkee, Uttarakhand (India); Madanapalle Institute of Technology and Science, Department of Physics, Madanapalle, Chittoor, Andhra Pradesh (India); Kaur, Davinder [Indian Institute of Technology Roorkee, Functional Nanomaterials Research Lab, Department of Physics, Roorkee, Uttarakhand (India)

    2016-12-15

    The effect of Cr substitution for In on the structural, martensitic phase transformation and mechanical properties of Ni-Mn-In ferromagnetic shape memory alloy (FSMA) thin films was systematically investigated. X-ray diffraction results revealed that the Ni-Mn-In-Cr thin films possessed purely austenitic cubic L2{sub 1} structure at lower content of Cr, whereas higher Cr content, the Ni-Mn-In-Cr thin films exhibited martensitic structure at room temperature. The temperature-dependent magnetization (M-T) and resistance (R-T) results confirmed that the monotonous increase in martensitic transformation temperatures (T{sub M}) with the addition of Cr content. Further, the room temperature nanoindentation studies revealed the mechanical properties such as hardness (H), elastic modulus (E), plasticity index (H/E) and resistance to plastic deformation (H{sup 3}/E {sup 2}) of all the samples. The addition of Cr content significantly enhanced the hardness (28.2 ± 2.4 GPa) and resistance to plastic deformation H{sup 3}/E{sup 2} (0.261) of Ni{sub 50.4}Mn{sub 34.96}In{sub 13.56}Cr{sub 1.08} film as compared with pure Ni-Mn-In film. As a result, the appropriate addition of Cr significantly improved the mechanical properties with a decrease in grain size, which could be further attributed to the grain boundary strengthening mechanism. These findings indicate that the Cr-doped Ni-Mn-In FSMA thin films are potential candidates for microelectromechanical systems applications. (orig.)

  13. Thickness-Dependent Order-to-Order Transitions of Bolaform-like Giant Surfactant in Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Chih-Hao; Yue, Kan; Wang, Jing; Dong, Xue-Hui; Xia, Yanfeng; Jiang, Zhang [X-ray; Thomas, Edwin L. [Department; Cheng, Stephen Z. D.

    2017-09-07

    Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit an irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.

  14. Influence of thin film thickness of working electrodes on photovoltaic characteristics of dye-sensitized solar cells

    Directory of Open Access Journals (Sweden)

    Lai Yeong-Lin

    2017-01-01

    Full Text Available This paper presents the study of the influence of thin film thickness of working electrodes on the photovoltaic characteristics of dye-sensitized solar cells. Titanium dioxide (TiO2 thin films, with the thickness from 7.67 to 24.3 μm, were used to fabricate the working electrodes of dye-sensitized solar cells (DSSCs. A TiO2 film was coated on a fluorine-doped tin oxide (FTO conductive glass substrate and then sintered in a high-temperature furnace. On the other hand, platinum (Pt solution was coated onto an FTO substrate for the fabrication of the counter electrode of a DSSC. The working electrode immersed in a dye, the counter electrode, and the electrolyte were assembled to complete a sandwich-structure DSSC. The material analysis of the TiO2 films of DSSCs was carried out by scanning electron microscopy (SEM and ultraviolet-visible (UV-Vis spectroscopy, while the photovoltaic characteristics of DSSCs were measured by an AM-1.5 sunlight simulator. The light transmittance characteristics of the TiO2 working electrode depend on the TiO2 film thickness. The thin film thickness of the working electrode also affects the light absorption of a dye and results in the photovoltaic characteristics of the DSSC, including open-circuited voltage (VOC, short-circuited current density (JSC, fill factor, and photovoltaic conversion efficiency.

  15. Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists

    International Nuclear Information System (INIS)

    Mahorowala, A.P.; Medeiros, D.R.

    2001-01-01

    Positive tone chemically amplified (CA) resists have demonstrated the sensitivity, contrast, and resolution necessary to print state-of-the-art subwavelength features using 248 nm and more recently 193 nm lithography. These materials are also being considered for printing sub-100 nm features with 157 nm and next-generation lithography technologies such as extreme ultraviolet and electron beam projection lithography. The basis for solubility differential and image formation in these resists is the acid catalyzed deprotection of labile protecting groups of an inherently base soluble polymer. The deprotection is effected by the photochemical generation of strong acid during the exposure process. Such acid-catalyzed deprotection reactions can also occur in unexposed resist areas when etched in a plasma. This can be due to UV exposure, high-energy ion bombardment, elevated substrate temperatures, or interaction of the resist surface with plasma species to form acidic moieties. Deprotection has been associated with resist mass loss and film shrinkage during plasma etching, leaving inadequate masking material for the entire etch step. In this article, we report the film thickness loss of several unexposed CA resists as a function of etch time in a variety of plasmas and correlate these data with film composition, monitored by Fourier transform infrared spectroscopy. These results are compared with theoretical predictions based on generally accepted deprotection mechanisms. Our findings indicate that the 'acidic' nature of certain plasmas such as Cl 2 /O 2 can result in deprotection in the resist film, even in the absence of a photoacid generator. Additionally, the data suggest that the nature of the resist polymer and, in turn, the identity of the deprotection products directly influence resist mass loss and etch rate linearity, both of which can be controlled by careful selection of resist materials

  16. Phase-resolved detection of the spin Hall angle by optical ferromagnetic resonance in perpendicularly magnetized thin films

    Science.gov (United States)

    Capua, Amir; Wang, Tianyu; Yang, See-Hun; Rettner, Charles; Phung, Timothy; Parkin, Stuart S. P.

    2017-02-01

    The conversion of charge current to spin current by the spin Hall effect is of considerable current interest from both fundamental and technological perspectives. Measurement of the spin Hall angle, especially for atomically thin systems with large magnetic anisotropies, is not straightforward. Here we demonstrate a hybrid phase-resolved optical-electrical ferromagnetic resonance method that we show can robustly determine the spin Hall angle in heavy-metal/ferromagnet bilayer systems with large perpendicular magnetic anisotropy. We present an analytical model of the ferromagnetic resonance spectrum in the presence of the spin Hall effect, in which the spin Hall angle can be directly determined from the changes in the amplitude response as a function of the spin current that is generated from a dc charge current passing through the heavy-metal layer. Increased sensitivity to the spin current is achieved by operation under conditions for which the magnetic potential is shallowest at the "Smit point." Study of the phase response reveals that the spin Hall angle can be reliably extracted from a simplified measurement that does not require scanning over time or magnetic field but rather only on the dc current. The method is applied to the Pt-Co/Ni/Co system whose spin Hall angle was to date characterized only indirectly and that is especially relevant for spin-orbit torque devices.

  17. Above room-temperature ferromagnetism in La1-xCaxMnO3 epitaxial thin films on SrTiO3(001) substrates

    Science.gov (United States)

    Kou, Yunfang; Wang, Hui; Miao, Tian; Wang, Yanmei; Xie, Lin; Wang, Shasha; Liu, Hao; Lin, Hanxuan; Zhu, Yinyan; Wang, Wenbin; Du, Haifeng; Pan, Xiaoqing; Wu, Ruqian; Yin, Lifeng; Shen, Jian

    The colossal magnetoresistive (CMR) manganites are popular materials for spintronics applications due to their high spin polarization. Only a couple of manganites like La1-xSrxMnO3 have a Curie temperature (Tc) that is higher than room temperature. Finding methods to raise the Tc of manganites over room temperature is useful but challenging. In this work, we use the most intensively studied La1-xCaxMnO3 (LCMO) as the prototype system to demonstrate that Tc can be greatly enhanced by carefully tuning the electronic structure using doping and strain. Specifically, we grow LCMO films on SrTiO3 (001) substrates using pulsed laser deposition. Magnetic and transport measurements indicate a great enhancement of Tc over room temperature at x =0.2 doping. Theoretical calculations indicate that the combined effects from doping and strain give rise to a new electronic structure favoring ferromagnetism in LCMO system. Furthermore, using the La0.8Ca0.2MnO3 as ferromagnetic electrodes, we achieve finite tunneling magnetoresistance (TMR) above room temperature.

  18. Enhancement in (BHmax of PLD-made isotropic Nd-Fe-B thick film magnets deposited on Si substrates

    Directory of Open Access Journals (Sweden)

    M. Nakano

    2017-05-01

    Full Text Available Increase in Nd contents of a PLD-made isotropic Nd-Fe-B thick-film magnet enabled us to enhance the thickness of the film magnet deposited on a Si substrate because the linear expansion coefficient of Nd is an intermediate value between Nd2Fe14B and Si. The large amount of Nd, however, degraded the residual magnetic polarization and (BHmax. In the study, we reduced the Nd contents of each Nd-Fe-B film by inserting a Nd or a Nd-rich Nd-Fe-B buffer layer between a Nd-Fe-B film and a Si substrate in order to suppress the mechanical destruction together with the improvement in magnetic properties. It was found that the mechanical property of a Nd-Fe-B film comprising the Nd-Fe-B buffer layer in the thickness range from 10 to 60 μm was superior than that of a sample with the Nd buffer layer. Resultantly, an average (BHmax value of Nd-Fe-B films with each Nd-Fe-B buffer layer deposited on Si substrates could be enhanced by approximately 15 kJ/m3 compared to that of non-buffer-layered films.

  19. Effects of mechanical properties of polymer on ceramic-polymer composite thick films fabricated by aerosol deposition

    Science.gov (United States)

    Kwon, Oh-Yun; Na, Hyun-Jun; Kim, Hyung-Jun; Lee, Dong-Won; Nam, Song-Min

    2012-05-01

    Two types of ceramic-polymer composite thick films were deposited on Cu substrates by an aerosol deposition process, and their properties were investigated to fabricate optimized ceramic-based polymer composite thick films for application onto integrated substrates with the advantage of plasticity. When polymers with different mechanical properties, such as polyimide (PI) and poly(methyl methacrylate) (PMMA), are used as starting powders together with α-Al2O3 powder, two types of composite films are formed with different characteristics - surface morphologies, deposition rates, and crystallite size of α-Al2O3. Through the results of micro-Vickers hardness testing, it was confirmed that the mechanical properties of the polymer itself are associated with the performances of the ceramic-polymer composite films. To support and explain these results, the microstructures of the two types of polymer powders were observed after planetary milling and an additional modeling test was carried out. As a result, we could conclude that the PMMA powder is distorted by the impact of the Al2O3 powder, so that the resulting Al2O3-PMMA composite film had a very small amount of PMMA and a low deposition rate. In contrast, when using PI powder, the Al2O3-PI composite film had a high deposition rate due to the cracking of PI particles. Consequently, it was revealed that the mechanical properties of polymers have a considerable effect on the properties of the resulting ceramic-polymer composite thick films.

  20. Improvement of a wall thinning rate model for liquid droplet impingement erosion. Implementation of liquid film thickness model with consideration of film behavior

    International Nuclear Information System (INIS)

    Morita, Ryo

    2014-01-01

    Liquid droplet impingement erosion (LDI) is defined as an erosion phenomenon caused by high-speed droplet attack in a steam flow. Pipe wall thinning by LDI is sometimes observed in a steam piping system of a power plant. As LDI usually occurs very locally and is difficult to detect, predicting LDI location is required for safe operation of power plant systems. Therefore, we have involved in the research program to develop prediction tools that will be used easily in actual power plants. Our previous researches developed a thinning rate evaluation model due to LDI (LDI model) and the evaluation system of the thinning rate and the thinning shape within a practically acceptable time (LDI evaluation system). Though the LDI model can include a cushioning effect of liquid film which is generated on the material surface by droplet impingement as an empirical equation with fluid parameter, the liquid film thickness is not clarified due to complex flow condition. In this study, to improve the LDI model and the LDI evaluation system, an analytical model of the liquid film thickness was proposed with consideration of the liquid film flow behavior on the material surface. The mass balance of the liquid film was considered, and the results of CFD calculations and existing researches were applied to obtain the liquid film thickness in this model. As a result of the LDI evaluation of the new LDI model with liquid film model, improvement of the LDI model was achieved. (author)

  1. Measurement of liquid film thickness in air - water two phase flows in conventional and mini channels using image processing

    Energy Technology Data Exchange (ETDEWEB)

    Seshadri, Arunkumar; Mahadevan, Swetha; Muniyandi, Venkatesan [SASTRA University, Thanjavur (India)

    2015-05-15

    The measurement and study of liquid films in the case of two phase flows is significant in many heat transfer and mass transfer applications, such as chemical process industries, micro reactors, coating processes and in boilers. The focus of the present study was to measure and characterize the thickness of the liquid films for various two phase flow regimes in conventional and in mini channels using a non-intrusive technique. Experiments were performed on tubes of diameters 0.6, 1.5, 2.6 and 3.4mm. The superficial velocities of gas and liquid are in the range of 0.01-50 and 0.01-3m/s, respectively. The flow patterns were recorded with a high speed camera. A method to determine the two phase flow velocity using image registration has been discussed. Morphological processing and gray scale analysis were used to determine the liquid film thickness and characterize the flow regimes. The flow patterns identified are bubbly, dispersed bubbly, slug, slug-annular, wavy-annular, stratified, and annular. The flow regimes were validated with flow maps available in the literature. The liquid film thickness was identified by distance transform technique in image processing. The magnitude of film thickness varied with liquid and gas flow velocities. The film thickness was represented in terms of capillary number. The variation in film thickness along the length of the flow regime has been discussed. A relation between the liquid film thicknesses measured using the non-intrusive image processing technique and capillary number for the conventional and mini tubes is proposed based on the analysis. h/d=2.03Ca{sup 0.13}We{sup 0.52} for Bo>1 h/d=1.08Ca{sup 0.4}We{sup 0.35} for Bo<1 It is concluded from the proposed correlation that the variation in liquid film thickness is different for conventional and mini channels because of the effect of inertial dominance in conventional channels and viscous dominance in mini channels.

  2. Fabrication and Properties of Bulk and Thick Film YTTRIUM(1) BARIUM(2) COPPER(3) OXYGEN(7-DELTA) Superconductors

    Science.gov (United States)

    Bailey, Andrew

    Many of the applications envisaged for the new high critical temperature cuprate superconductors require the ability to produce high quality material in layers of 1-100mum thickness which can be used as prepared, or after patterning into discrete forms. Among the possible applications in the foreseeable future are EMI/EMC shielding, pcb interconnects, inductances, stripline, mixers and resonators. Consequently it is important to establish methods of 'thick film' manufacture which provide the versatility necessary for the wide range of uses. During the course of this research, a variety of processing methods have been studied in an attempt to optimize the important film parameters of density, adhesion, strength and good stable superconducting characteristics. Details will be given of substrate-layer interaction for the various substrates that were studied, which included alumina, sapphire, single crystal (100)MgO and yttria stabilised zirconia together with a number of methods of substrate passivation. To date, the most successful substrate for Y_1Ba_2Cu_3O_{7-delta } thick film production has been yttria stabilised zirconia. This thesis will discuss the results of investigations, using yttria stabilised zirconia substrates, which have identified satisfactory means of obtaining superconducting layers with T_{c} = 91.5K and J_{c~ }3000 Acm^{-2} in zero applied magnetic field. At the time of writing, this value of critical current density remains the highest reported value for Y_1Ba_2Cu _3O_{7-delta} thick films. These high quality thick films were then used in a study of conduction mechanisms and the results are interpreted in terms of flux pinning and thermodynamic fluctuation theory. These results highlighted the complex nature of the conduction process in these new ceramics, which is dominated by the weak-link intergranular contacts. Finally, details are given of Josephson characteristics that were observed in variable thickness microbridges patterned into the

  3. Effects of TiO2 Film Thickness and Electrolyte Concentration on Photovoltaic Performance of Dye-Sensitized Solar Cell

    Science.gov (United States)

    Domtau, D. L.; Simiyu, J.; Ayieta, E. O.; Nyakiti, L. O.; Muthoka, B.; Mwabora, J. M.

    Effects of film thickness and electrolyte concentration on the photovoltaic performance of TiO2-based dye-sensitized solar cell (DSSC) were studied. Nanocrystalline anatase TiO2 thin films with varying thicknesses (3.2-18.9μm) have been deposited on FTO/glass substrates by screen printing method as work electrodes for DSSC. The prepared samples were characterized by UV-Vis spectroscopy, Atomic Force Microscopy/Scanning Tunneling Microscopy (AFM/STM) and X-ray diffraction (XRD). The optimal thickness of the TiO2 photoanode is 13.5μm. Short-circuit photocurrent density (Jsc) increases with film thickness due to enlargement of surface area whereas open-circuit voltage decreases with increase in thickness due to increase in electron diffusion length to the electrode. However, the Jsc and Voc of DSSC with a film thickness of 18.9μm (7.5mA/cm2 and 0.687V) are smaller than those of DSSC with a TiO2 film thickness of 13.5μm (9.9mA/cm2 and 0.734V). This is because the increased thickness of TiO2 thin film resulted in the decrease in the transmittance of TiO2 thin films hence reducing the incident light intensity on the N719 dye. Photovoltaic performance also depends greatly on the redox couple concentration in iodide∖triiodide. Jsc decreases as the redox concentration increases as a result of increased viscosity of the solution which lowers ion mobility. Similarly, Voc decreases as the electrolyte concentration increases due to enhanced back electron transfer reaction. An optimum power conversion efficiency of 4.3% was obtained in a DSSC with the TiO2 film thickness of 13.5μm and redox concentration of 0.03mol dm-3 under AM 1.5G illumination at 100mW/cm2.

  4. The Nanostructure Formation and Growth Evolution of Ferroelectric/Ferromagnetic BiFeO3-CoFe2O4 Thin Films

    Science.gov (United States)

    Young, Sheng Yu; Salamanca-Riba, Lourdes G.; Zheng, Haimei

    2006-03-01

    We have investigated the mechanism of the self-assembly of BiFeO3-CoFe2O4 (BFO-CFO) ferroelectric/ferromagnetic thin film nanostructures using high-resolution transmission electron microscopy. We discuss the formation of the CFO columnar structure during the deposition process. The BFO-CFO thin films were deposited on SrTiO3 (001) single crystal substrates using pulsed laser deposition at a substrate temperature of 700 ^oC and deposition rate of around 5nm/min. In the early stages of growth, CFO domains form with dome like island shape and are covered by a BFO layer. After approximately 10 mins of continuous deposition, the nanocomposite rearranges and diffusion dominates to form a self-assembly of faceted CFO columns that extend to the surface of the film. These columns show pyramidal-like faceted shape and are embedded in the BFO matrix. A few atomic layers of BFO lie at the interface between the CFO columnar structures and the substrate. This layer helps relax the misfit strain between CFO and STO. The magnetic properties of the nanocomposite samples will also be presented.

  5. Fabrication and characterization of MEMS-based PZT/PZT bimorph thick film vibration energy harvesters

    DEFF Research Database (Denmark)

    Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

    2012-01-01

    We describe the fabrication and characterization of a significantly improved version of a microelectromechanical system-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass; the harvester is fabricated in a fully monolithic process. The main advantage...... of bimorph vibration energy harvesters is that strain energy is not lost in mechanical support materials since only Pb(ZrxTi1-x)O3 (PZT) is strained; as a result, the effective system coupling coefficient is increased, and thus a potential for significantly higher output power is released. In addition, when...... the two layers are connected in series, the output voltage is increased, and as a result the relative power loss in the necessary rectifying circuit is reduced. We describe an improved process scheme for the energy harvester, which resulted in a robust fabrication process with a record high fabrication...

  6. Homogeneity Analysis of a MEMS-based PZT Thick Film Vibration Energy Harvester Manufacturing Process

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Borregaard, Louise M.

    2012-01-01

    This paper presents a homogeneity analysis of a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibration energy harvesters aimed towards vibration sources with peak vibrations in the range of around 300Hz. A wafer with a yield of 91% (41/45 devices) has been...... indicating that the main variation in open circuit voltage performance is caused by varying quality factor. The average resonant frequency was measured to 333Hz with a standard variation of 9.8Hz and a harvesting bandwidth of 5-10Hz. A maximum power output of 39.3μW was achieved at 1g for the best performing...... harvester....

  7. Piezoelectric and Magnetoelectric Thick Films for Fabricating Power Sources in Wireless Sensor Nodes

    Directory of Open Access Journals (Sweden)

    Jong-Jin Choi

    2009-08-01

    Full Text Available In this manuscript, we review the progress made in the synthesis of thick film-based piezoelectric and magnetoelectric structures for harvesting energy from mechanical vibrations and magnetic field. Piezoelectric compositions in the system Pb(Zr,TiO3–Pb(Zn1/3Nb2/3O3 (PZNT have shown promise for providing enhanced efficiency due to higher energy density and thus form the base of transducers designed for capturing the mechanical energy. Laminate structures of PZNT with magnetostrictive ferrite materials provide large magnitudes of magnetoelectric coupling and are being targeted to capture the stray magnetic field energy. We analyze the models used to predict the performance of the energy harvesters and present a full system description.

  8. Micro-particle manipulation by single beam acoustic tweezers based on hydrothermal PZT thick film

    International Nuclear Information System (INIS)

    Zhu, Benpeng; Xu, Jiong; Yang, Xiaofei; Li, Ying; Lee, Changyang; Zhou, Qifa; Shung, K. Kirk; Wang, Tian; Xiong, Ke; Shiiba, Michihisa; Takeuchi, Shinichi

    2016-01-01

    Single-beam acoustic tweezers (SBAT), used in laboratory-on-a-chip (LOC) device has promising implications for an individual micro-particle contactless manipulation. In this study, a freestanding hydrothermal PZT thick film with excellent piezoelectric property (d 33 = 270 pC/N and k t = 0.51) was employed for SBAT applications and a press-focusing technology was introduced. The obtained SBAT, acting at an operational frequency of 50 MHz, a low f-number (∼0.9), demonstrated the capability to trap and manipulate a micro-particle sized 10μm in the distilled water. These results suggest that such a device has great potential as a manipulator for a wide range of biomedical and chemical science applications.

  9. Design guidelines for advanced LSI microcircuit packaging using thick film multilayer technology

    Science.gov (United States)

    Peckinpaugh, C. J.

    1974-01-01

    Ceramic multilayer circuitry results from the sequential build-up of two or more layers of pre-determined conductive interconnections separated by dielectric layers and fired at an elevated temperature to form a solidly fused structure. The resultant ceramic interconnect matrix is used as a base to mount active and passive devices and provide the necessary electrical interconnection to accomplish the desired electrical circuit. Many methods are known for developing multilevel conductor mechanisms such as multilayer printed circuits, welded wire matrices, flexible copper tape conductors, and thin and thick-film ceramic multilayers. Each method can be considered as a specialized field with each possessing its own particular set of benefits and problems. This design guide restricts itself to the art of design, fabrication and assembly of ceramic multilayer circuitry and the reliability of the end product.

  10. Formation and physical properties of YBCO thick films grown by using the electrophoretic deposition method

    CERN Document Server

    Kim, U J; Kim, Y C; Han, S K; Kang, K Y

    1999-01-01

    Thick films of the YBa sub 2 Cu sub 3 O subgamma sub - subdelta (YBCO) superconductor were prepared by using the electrophoretic deposition technique and a flexible wire as the substrate. The transition temperature of the wires was 91 K, the intragranular magnetic critical current density J sub c sub g sup m sup a sup g was about 10 sup 5 A/cm sup 2 at 77 K in a weak field, and the transport J sub c sup t sup r sup a sup n sup s was about 365 A/cm sup 2 at 77 K. We calculated the intergranular magnetic critical current J sub c sub J sup m sup a sup g and the activation energy from the AC-susceptibility measurements, and their values were about 444 A/cm sup 2 at 77 K and 2.02 eV, respectively.

  11. Generation of Bessel Surface Plasmon Polaritons in a Finite-Thickness Metal Film

    Directory of Open Access Journals (Sweden)

    S. N. Kurilkina

    2013-01-01

    Full Text Available A theory of generation of low- and high-index Bessel surface plasmon polaritons and their superposition in a metal film of a finite thickness is developed. Correct analytical expressions are obtained for the field of two families of Bessel surface plasmon polariton modes formed inside and outside the metal layer. The intensity distribution near the boundary of the layer has been calculated and analyzed. A scheme for the experimental realization of a superposition of Bessel surface plasmon polaritons is suggested. Our study demonstrates that it is feasible to use the superposition of Bessel surface plasmon polaritons as a virtual tip for near-field optical microscopy with a nanoscale resolution.

  12. Coexistence of several structural phases in MOCVD TiO{sub 2} layers: evolution from nanometre to micrometre thick films

    Energy Technology Data Exchange (ETDEWEB)

    Brevet, A; Marco de Lucas, M C; Potin, V; Chassagnon, R; Imhoff, L; Domenichini, B; Bourgeois, S, E-mail: delucas@u-bourgogne.f [Institut Carnot de Bourgogne, UMR 5209 CNRS-Universite de Bourgogne, 9 Av. A. Savary, BP 47 870, F-21078 DIJON Cedex (France)

    2009-09-07

    The morphology and the structure of TiO{sub 2} films, grown on Si (1 0 0) substrates by metal organic chemical vapour deposition (MOCVD) was investigated in 5-500 nm thick films. It was shown that the TiO{sub 2} layer is mainly amorphous at the first stages of deposition. The growth of nanocrystallites begins inside the amorphous TiO{sub 2} layer, and it continues at the expense of the amorphous phase until the crystallized grains occupy the whole layer. Then, the film growth continues with a columnar structure. The coexistence of anatase and rutile phases was evidenced from the beginning of the growth by high resolution transmission electron microscopy and grazing incidence x-ray diffraction. However, the anatase growth overcomes that of rutile, leading to an inhomogeneous phase distribution as a function of the film thickness.

  13. Electrical properties and conduction mechanisms of Ru-based thick-film (cermet) resistors

    International Nuclear Information System (INIS)

    Pike, G.E.; Seager, C.H.

    1977-01-01

    This paper presents an experimental study of the electrical conduction mechanisms in thick-film (cermet) resistor. The resistors were made from one custom and three commercially formulated inks with sheet resistivities ranging from 10 2 to 10 6 Ω/D 7 Alembertian in decade increments. Their microstructure and composition have been examined using optical and scanning electron microscopy, electron microprobe analysis, x-ray diffraction, and various chemical analyses. This portion of our study shows that the resistors are heterogeneous mixtures of metallic metal oxide particles (approx.4 x 10 -5 cm in diameter) and a lead silicate glass. The metal oxide particles are ruthenium containing pyrochlores, and are joined to form a continuous three-dimensional network of chain segments. The principal experimental work reported here is an extensive study of the electrical transport properties of the resistors. The temperature dependence of conductance has been measured from 1.2 to 400 K, and two features common to all resistors are found. There is a pronounced decrease in conductance at low temperatures and a shallow maximum at several hundred Kelvin. Within the same range of temperatures the reversible conductance as a function of electric field from 0 to 28 kV/cm has been studied. The resistors are non-Ohmic at all temperatures, but particularly at cryogenic temperatures for low fields. At higher fields the conductance shows a linear variation with electric field. The thick-film resistors are found to have a small dielectric constant and a (nearly) frequency-independent conductance from dc to 50 MHz. The magnetoresistance to 100 kG, the Hall mobility, and the Seebeck coefficient of most of the resistors have been measured and discovered to be quite small. Many of the electrical transport properties have also been determined for the metal oxide particles which were extracted from the fired resistors

  14. In vitro analysis of the cement film thickness of two endodontic sealers in the apical region

    Directory of Open Access Journals (Sweden)

    Garcia Lucas da Fonseca

    2009-01-01

    Full Text Available Objectives : The objective of the present study was to evaluate in vitro film thickness of two endodontic sealers containing epoxy-resin and zinc-oxide-eugenol, respectively in the apical region of the root canal system. Materials and Methods : A total of 20 palatine roots of the first maxillary molars were submitted to instrumentation up to a #40 file by the step-back technique and irrigated with 2 ml of NaOCl after each change of file. The roots were divided at random into two groups of 10 elements; one group was sealed with the Sealer 26® cement and the other one with the EndoFill® cement using the classical technique. The roots were abraded in the apical region until exposure of the filling and cut crosswise at 3 mm to obtain samples. The samples were analyzed by optic microscopy with 40X magnification. The images obtained were recorded using the Adobe Premiere 5.1® software and submitted to morphometric analysis using an integration grid that permitted the quantification of the area filled with the sealer or gutta-percha, and eventual empty spaces. Results : Statistical analysis of the data (Kruskal-Wallis test, P < 0.05 revealed no significant differences between the epoxy-resin-based cement Sealer 26® (47.85% and the zinc- oxide- eugenol-based cement EndoFill® (54.16%. Conclusion : We conclude that the two sealers tested showed a similar behavior regarding the cement film thickness in the apical region.

  15. Properties of PZT thick film made on LTCC substrates with dielectric intermediate layers

    Science.gov (United States)

    DÄ browski, Arkadiusz; Golonka, Leszek

    2016-11-01

    Results of experiments on application of various interlayers between LTCC (Low Temperature Cofired Ceramics) substrate and thick-film PZT (Lead Zirconate - Titanate) are described in this work. Thick-film intermediate layers were based on several dielectric materials: TiN, Al2O3, SiC, TiO2, SiC, YSZ, BN. Seven screen printable pastes were prepared on the base of powders of mentioned materials with addition of glass and organic vehicle. The substrates were made of 951 (DuPont), CeramTapeGC (CeramTec) and HL2000 (Heraeus) LTCC tapes. Sandwich type transducers, consisting of barrier layer, gold bottom electrode, PZT layer and silver top electrode were prepared and characterized. Basic piezoelectric parameters - permittivity, effective charge constant (d33(eff)) and remanent polarization were determined. The best properties were obtained for substrates made of 951. In general, interlayers based on TiO2, SiC and Al2O3 improved permittivity and charge constant comparing to bare substrates. For example, for 951 substrate the PZT layer exhibited d33(eff) equal to 160, 215, 250 and 230 pC/N for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of CeramTape GC substrates determined permittivity was equal to 215, 245, 235 and 275 for bare substrate, TiO2 interlayer, SiC interlayer and Al2O3 interlayer, respectively. In case of TiN and BN materials the parameters were considerably deteriorated.

  16. An Ion-selective Electrode for Anion Perchlorate in Thick-film Technology

    Directory of Open Access Journals (Sweden)

    Luís Gil

    2006-04-01

    Full Text Available The ionophore 1,4,7,10,13-penta(n-octyl-1,4,7,10,13-pentaazacyclopentadecane(L1 was used for the development of miniaturised perchlorate-selective electrodes in thick-film technology. Different PVC membranes containing L1 and the plasticizers o-nitrophenyloctyl ether (NPOE, dibutyl phthalate (DBP, bis(2-ethylhexylsebacate (DOS and dibutylsebacate (DBS were prepared and placed on a graphite working electrode manufactured byusing thick film serigraphic technology. The perchlorate selective electrode containing DBSas plasticizer showed a potentiometric Nernstian response of -57 mV per decade in a rangeof perchlorate concentration from 1 x 10-4 to 1 x 10-1 M with a detection limit of 5 x 10-5 M.The ion selective electrodes containing DBP and NPOE as plasticizers exhibit a workingrange from 6.3 x 10-5 to 1 x 10-1 M and 7.4 x 10-5 to 1 x 10-1 M for perchlorate, respectively,with a detection limit of ca. 2.2 x 10-5 M. For all three electrodes a response time of ca. 5 s was found. The prepared electrodes do not show appreciable decay of the slope for at least 25 days. Potentiometric selectivity coefficients (log KpotClO4-,X- with respect to the primaryanion perchlorate were evaluated using the fixed interference method. These coefficients areof the order of 10-1.7 or smaller, indicating the relatively poor interference of the differentanions studied.

  17. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    NARCIS (Netherlands)

    Van Hao, B.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.

    2012-01-01

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth

  18. Tailoring dynamic magnetic characteristics of F e60A l40 films through ion irradiation

    Science.gov (United States)

    Tahir, N.; Bali, R.; Gieniusz, R.; Mamica, S.; Gollwitzer, J.; Schneider, T.; Lenz, K.; Potzger, K.; Lindner, J.; Krawczyk, M.; Fassbender, J.; Maziewski, A.

    2015-10-01

    Magnetization dynamics in F e60A l40 thin films possessing depth-varying saturation magnetization (MS) have been studied experimentally and theoretically. Variation in MS was achieved by irradiation of 40 nm thick, chemically ordered (B2 phase) F e60A l40 films with N e+ ions with energies between 0-30 keV. The initial B2 phase is paramagnetic, and as the penetrating ions cause chemical disordering, the ion-affected region transforms to the ferromagnetic A2 phase. The effective ferromagnetic thickness and the depth of the A2/B2 phase boundary depend on the ion energy (E ); the effective thicknesses are 8.5 and 40 nm, respectively, for E =2.5 and 30 keV. Thermally excited spin waves in films with varying effective ferromagnetic thicknesses were analyzed by employing Brillouin light scattering and vector network analyzer ferromagnetic resonance spectroscopy. The analytical calculations are in good agreement with the experimental values and show that the observed spin-wave modes are directly related to the effective ferromagnetic thickness; films irradiated with E A2/B2 phase boundary can be shown to act as an asymmetric pinning site. Controlling the depth of the phase boundary by varying the ion energy can be a path to manipulate spin-wave propagation in materials displaying the phenomenon of disorder induced ferromagnetism.

  19. Capability of Sputtered Micro-patterned NiTi Thick Films

    Science.gov (United States)

    Bechtold, Christoph; Lima de Miranda, Rodrigo; Quandt, Eckhard

    2015-09-01

    Today, most NiTi devices are manufactured by a combination of conventional metal fabrication steps, e.g., melting, extrusion, cold working, etc., and are subsequently structured by high accuracy laser cutting. This combination has been proven to be very successful; however, there are several limitations to this fabrication route, e.g., in respect to the fabrication of more complex device designs, device miniaturization or the combination of different materials for the integration of further functionality. These issues have to be addressed in order to develop new devices and applications. The fabrication of micro-patterned films using magnetron sputtering, UV lithography, and wet etching has great potential to overcome limitations of conventional device manufacturing. Due to its fabrication characteristics, this method allows the production of devices with complex designs, high structural accuracy, smooth edge profile, at layer thicknesses up to 75 µm. The aim of this study is to present recent developments in the field of NiTi thin film technology, its advantages and limitations, as well as new possible applications in the medical and in non-medical fields. These developments include among others NiTi scaffold structures covered with NiTi membranes for their potential use as filters, heart valve components or aneurysm treatments, as well as micro-actuators for consumable electronics or automotive applications.

  20. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  1. Experimental studies of O2-SnO2 surface interaction using powder, thick films and monocrystalline thin films

    International Nuclear Information System (INIS)

    Saukko, S.; Lassi, Ulla; Lantto, V.; Kroneld, M.; Novikov, S.; Kuivalainen, P.; Rantala, T.T.; Mizsei, J.

    2005-01-01

    Surface properties of solids and the interactions between molecules and solid surfaces are important for many technical applications. They also involve a range of physical and chemical phenomena of fundamental scientific interest. The importance of oxygen chemistry at SnO 2 surfaces follows from the fact that SnO 2 is used as an active material in gas sensor applications. The operation principle of these sensors is usually based on measurable conductance response of the material, which is understood in terms of reactions of gas molecules with different oxygen species adsorbed onto the surface. The role of the lattice oxygen, but in particular, the bridging oxygen atoms on SnO 2 surfaces, is also active. Detailed understanding of the reaction mechanisms of various oxygen species at SnO 2 surfaces is important, as it offers a way to improve the sensitivity and selectivity of the sensors. Oxygen adsorption-desorption kinetics at the SnO 2 surface is studied experimentally using O 2 -temperature-programmed desorption (TPD) method together with conductance measurements in the case of SnO 2 powder and polycrystalline thick films made from the powder. In addition, CO-TPD is studied and the transient behaviour of various oxygen species is considered. Molecular beam epitaxy (MBE) was also used to fabricate polycrystalline and monocrystalline thin films with the SnO 2 (101) face on single crystal sapphire substrate. Simultaneous surface potential and conductance measurements during heating and cooling in different ambient atmospheres were used to characterize the monocrystalline SnO 2 (101) surface after various surface treatments

  2. Coexistence of electric field controlled ferromagnetism and resistive switching for TiO{sub 2} film at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Shaoqing; Qin, Hongwei; Bu, Jianpei; Zhu, Gengchang; Xie, Jihao; Hu, Jifan, E-mail: hujf@sdu.edu.cn, E-mail: hu-jf@vip.163.com [School of Physics, State Key Laboratory for Crystal Materials, Shandong University, Jinan 250100 (China)

    2015-08-10

    The Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device exhibits the coexistence of electric field controlled ferromagnetism and resistive switching at room temperature. The bipolar resistive switching in Ag/TiO{sub 2}/Nb:SrTiO{sub 3}/Ag device may be dominated by the modulation of Schottky-like barrier with the electron injection-trapped/detrapped process at the interface of TiO{sub 2}/Nb:SrTiO{sub 3}. We suggest that the electric field-induced magnetization modulation originates mainly from the creation/annihilation of lots of oxygen vacancies in TiO{sub 2}.

  3. Electrophoretic deposition of highly textured YBa2Cu3O7-x thick films

    International Nuclear Information System (INIS)

    Heim, M.; Mahner, E.; Muller, G.; Piel, H.; Ponto, L.; Becks, M.; Klein, U.; Peiniger, M.

    1989-01-01

    The authors have developed an electrophoretic technique for the deposition of polycrystalline YBa 2 Cu 3 O 7 - x layers of several tens of microns in thickness on arbitrary shaped silver substrates. Applying a magnetic field H of 8 T to the suspension a high degree of c-axis texturing parallel to H and perpendicular to the surface has been achieved for such layers as shown by x-ray diffraction. After sintering for about 140 h at 920 degrees C in pure oxygen the textured thick films provide much better superconducting properties than the untextured ones and than bulk samples. Magnetic shielding measurements yield narrower transition curves and higher T c values due to improved intergrain contacts. The surface resistance R s has been measured on coated silver discs of 24 mm diameter in a copper host cavity at 22 GHz between 4.2 K and 300 K. For the best sample, R s (100 K) is 0.33 Ω which corresponds to a resistivity of 130 μ Ω cm. Below T c app 92 ± 1K, R s drops at first steeply and then gradually to 18 mΩ at 77K and less than 3 mΩ at 4.2 K. Since these values are lower than R s of pure copper, microwave applications of high T c superconductors like cavities with high quality factors are within reach now

  4. Dependence of the conductivity on the active-region thickness in GaAs thin-film Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zuev, S. A., E-mail: sazuev@yandex.ru; Kilessa, G. V.; Asanov, E. E.; Starostenko, V. V.; Pokrova, S. V. [Vernadsky Crimean Federal University (Russian Federation)

    2016-06-15

    The dependences of the electrical characteristics of thin-film structures with Schottky barrier on gallium arsenide are studied using Monte Carlo numerical simulation in the kinetic approximation with the main scattering mechanisms taken into account. The dependences of the diode conductivity on the voltage and channel thickness are obtained. It is shown that the relation between the diode voltage and conductivity changes at a small channel thickness, which is explained by barrier field expulsion to the substrate.

  5. Thickness dependence of optical parameters for ZnTe thin films deposited by electron beam gun evaporation technique

    International Nuclear Information System (INIS)

    Salem, A.M.; Dahy, T.M.; El-Gendy, Y.A.

    2008-01-01

    Zinc telluride thin films with different thicknesses have been deposited by electron beam gun evaporation system onto glass substrates at room temperature. X-ray and electron diffraction techniques have been employed to determine the crystal structure and the particle size of the deposited films. The stoichiometry of the deposited films was confirmed by means of energy-dispersive X-ray spectrometry. The optical transmission and reflection spectrum of the deposited films have been recorded in the wavelength optical range 450-2500 nm. The variation of the optical parameters, i.e. refractive index, n, extinction coefficient, k, with thickness of the deposited films has been investigated. The refractive index dispersion in the transmission and low absorption region is adequately described by the single-oscillator model, whereby the values of the oscillator strength, oscillator position, dispersion parameter as well as the high-frequency dielectric constant were calculated for different film thickness. Graphical representations of the surface and volume energy loss function were also presented

  6. Thickness-dependent coherent phonon frequency in ultrathin FeSe/SrTiO3 films

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuolong [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Sobota, Jonathan A. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Leuenberger, Dominik [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kemper, Alexander F. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States); Lee, James J. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Schmitt, Felix T. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Li, Wei [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Moore, Rob G. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States); Kirchmann, Patrick S. [SLAC National Accelerator Lab., Menlo Park, CA (United States); Shen, Zhi -Xun [SLAC National Accelerator Lab., Menlo Park, CA (United States); Stanford Univ., Stanford, CA (United States)

    2015-06-01

    Ultrathin FeSe films grown on SrTiO3 substrates are a recent milestone in atomic material engineering due to their important role in understanding unconventional superconductivity in Fe-based materials. By using femtosecond time- and angle-resolved photoelectron spectroscopy, we study phonon frequencies in ultrathin FeSe/SrTiO3 films grown by molecular beam epitaxy. After optical excitation, we observe periodic modulations of the photoelectron spectrum as a function of pump–probe delay for 1-unit-cell, 3-unit-cell, and 60-unit-cell thick FeSe films. The frequencies of the coherent intensity oscillations increase from 5.00 ± 0.02 to 5.25 ± 0.02 THz with increasing film thickness. By comparing with previous works, we attribute this mode to the Se A1g phonon. The dominant mechanism for the phonon softening in 1-unit-cell thick FeSe films is a substrate-induced lattice strain. Results demonstrate an abrupt phonon renormalization due to a lattice mismatch between the ultrathin film and the substrate.

  7. Study of nanosized copper-doped ZnO dilute magnetic semiconductor thick films for spintronic device applications

    Science.gov (United States)

    Zargar, Rayees Ahmad; Arora, Manju; Bhat, Riyaz Ahmed

    2018-01-01

    Screen-printed pure and copper-doped ZnO dilute magnetic semiconductor thick films were casted from chemically co-precipitated zinc oxide and copper-doped zinc oxide nanoparticles followed by sintering at 550 °C to obtain desired stoichiometry in spintronic device applications. These thick films were characterized by different analytical techniques to reveal their structure, surface morphology, optical, magnetic and electrical characteristics. The diffraction peaks pertaining to wurtzite structure are observed in XRD patterns of these films, while SEM images show smooth and dense morphology. Infrared transmission and Raman spectra exhibit vibrational bands pertaining to Zn-O-stretching modes and E 2 (high) phonon mode, respectively, in 4000-400 cm-1 region. The direct bandgap energy of these films derived from diffused reflectance spectroscopy varies in 3.21-3.13 eV range and is supported by PL spectroscopy study. The semiconducting behaviour and activation energy of these thick films has been confirmed by DC conductivity measurements. Electron paramagnetic resonance spectra showed derivative signal of g value 2.0018 in pure ZnO due to oxygen vacancies produced during synthesis and 2.0704 in copper-doped ZnO dilute magnetic semiconductor films.

  8. Ferromagnetic resonance features of degenerate GdN semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Vidyasagar, Reddithota, E-mail: dr.vidyasagar1979@gmail.com [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Sakurai, Takahiro; Shimokawa, Tokuro [Centre for Support to Research and Education Activities, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Ohta, Hitoshi [Molecular Photoscience Research Center and Graduate School of Science, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan)

    2017-06-15

    Using X-band Ferromagnetic Resonance (FMR) Spectroscopy, we demonstrate the microscopic ferromagnetic resonance features of degenerated GdN semiconductor. The FMR spectrum suggests a single resonance mode below 10 K; interestingly, this particular structure is found to exhibit a peculiar magnetic resonance (PMR) on the top of the uniform FMR while temperature increases from 12–36 K. The low-field PMR mode attributed to the differently magnetized part of the film with an easy in-plane axis. The narrow-field gap between PMR and uniform FMR suggests the strong coupling owning to the differently magnetized part with easy in-plane axis and the magnetized part with an out-of-plane axis. The saturation magnetization, cubic magnetocrystalline anisotropy, and uniaxial anisotropy of GdN epitaxial film have been evaluated by the angular-dependence FMR. - Highlights: • Observation of peculiar magnetic resonance (PMR) on the top of ferromagnetic resonance (FMR). • Newly evolving PMR manifests differently magnetized part of the film with an easy in-plane axis. • Narrow gap between PMR and FMR owing to the strong interaction between two spin–wave resonances. • Uniaxial anisotropy increases with GdN thickness decreases.

  9. Oxygen vacancy induced room temperature ferromagnetism in (In1-xNix)2O3 thin films

    Science.gov (United States)

    Chakraborty, Deepannita; Kaleemulla, S.; Kuppan, M.; Rao, N. Madhusudhana; Krishnamoorthi, C.; Omkaram, I.; Reddy, D. Sreekantha; Rao, G. Venugopal

    2018-05-01

    Nickel doped indium oxide thin films (In1-xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1-xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1-xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1-xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

  10. Structure, surface morphology and electrical properties of evaporated Ni thin films: Effect of substrates, thickness and Cu underlayer

    International Nuclear Information System (INIS)

    Hemmous, M.; Layadi, A.; Guittoum, A.; Souami, N.; Mebarki, M.; Menni, N.

    2014-01-01

    Series of Ni thin films have been deposited by thermal evaporation onto glass, Si(111), Cu, mica and Al 2 O 3 substrates with and without a Cu underlayer. The Ni thicknesses, t, are in the 4 to 163 nm range. The Cu underlayer has also been evaporated with a Cu thickness equal to 27, 52 and 90 nm. The effects of substrate, the Ni thickness and the Cu underlayer on the structural and electrical properties of Ni are investigated. Rutherford Backscattering Spectroscopy was used to probe the Ni/Substrate and Ni–Cu underlayer interfaces and to measure both Ni and Cu thicknesses. The texture, the strain and the grain size values were derived from X-ray diffraction experiments. The surface morphology is studied by means of a Scanning Electron Microscope. The electrical resistivity is measured by the four point probe. The Ni films grow with the <111> texture on all substrates. The Ni grain sizes D increase with increasing thickness for the glass, Si and mica substrates and decrease for the Cu one. The strain ε is positive for low thickness, decreases in magnitude and becomes negative as t increases. With the Cu underlayer, the growth mode goes through two phases: first, the stress (grain size) increases (decreases) up to a critical thickness t Cr , then stress is relieved and grain size increases. All these results will be discussed and correlated. - Highlights: • The structural and electrical properties of evaporated Ni thin films are studied. • The effect of thickness, substrates and Cu underlayer is investigated. • Texture, grain size, strain and surface morphology are discussed. • Growth modes are described as a function of Ni thickness

  11. Influence of artificial pinning centers on structural and superconducting properties of thick YBCO films on ABAD-YSZ templates

    Science.gov (United States)

    Pahlke, Patrick; Sieger, Max; Ottolinger, Rick; Lao, Mayraluna; Eisterer, Michael; Meledin, Alexander; Van Tendeloo, Gustaaf; Hänisch, Jens; Holzapfel, Bernhard; Schultz, Ludwig; Nielsch, Kornelius; Hühne, Ruben

    2018-04-01

    Recent efforts in the development of YBa2Cu3O7-x (YBCO) coated conductors are devoted to the increase of the critical current I c in magnetic fields. This is typically realized by growing thicker YBCO layers as well as by the incorporation of artificial pinning centers. We studied the growth of doped YBCO layers with a thickness of up to 7 μm using pulsed laser deposition with a growth rate of about 1.2 nm s-1. Industrially fabricated ion-beam textured YSZ templates based on metal tapes were used as substrates for this study. The incorporation of BaHfO3 (BHO) or Ba2Y(Nb0.5Ta0.5)O6 (BYNTO) secondary phase additions leads to a denser microstructure compared to undoped films. A purely c-axis-oriented YBCO growth is preserved up to a thickness of about 4 μm, whereas misoriented texture components were observed in thicker films. The critical temperature is slightly reduced compared to undoped films and independent of film thickness. The critical current density J c of the BHO- and BYNTO-doped YBCO layers is lower at 77 K and self-field compared to pure YBCO layers; however, I c increases up to a thickness of 5 μm. A comparison between films with a thickness of 1.3 μm revealed that the anisotropy of the critical current density J c(θ) strongly depends on the incorporated pinning centers. Whereas BHO nanorods lead to a strong B∣∣c-axis peak, the overall anisotropy is significantly reduced by the incorporation of BYNTO forming a mixture of short c-axis-oriented nanorods and small (a-b)-oriented platelets. As a result, the J c values of the doped films outperform the undoped samples at higher fields and lower temperatures for most magnetic field directions.

  12. Thickness dependence of the quantum Hall effect in films of the three-dimensional Dirac semimetal Cd3As2

    Directory of Open Access Journals (Sweden)

    Manik Goyal

    2018-02-01

    Full Text Available Low-temperature magnetotransport studies are reported for (112Cd3As2 films grown on (111CdTe by molecular beam epitaxy as a function of the Cd3As2 film thickness. All films show Shubnikov-de Haas oscillations. An even-integer quantum Hall effect is observed for films thinner than 70 nm. For the thinnest films, the bulk is gapped and transport at low temperatures occurs only via the gapless, two-dimensional states. The lowest Landau level is reached at ∼10 T, and the longitudinal resistance nearly vanishes at the plateaus in the Hall resistance. The results are discussed in the context of the current theoretical understanding of topological surface states in three-dimensional Dirac semimetals.

  13. Thickness and bilayer number dependence on exchange bias in ferromagnetic/antiferromagnetic multilayers based on La{sub 1−x}Ca{sub x}MnO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Restrepo-Parra, E., E-mail: erestrepopa@unal.edu.co [Departamento de Física y Química, Universidad Nacional de Colombia-Sede Manizales, A.A. 127 Manizales (Colombia); Agudelo-Giraldo, J.D. [Departamento de Física y Química, Universidad Nacional de Colombia-Sede Manizales, A.A. 127 Manizales (Colombia); Grupo de Investigación y Desarrollo en Informática y Telecomunicaciones, Universidad de Manizales, Manizales (Colombia); Restrepo, J. [Grupo de Magnetismo y Simulación, Instituto de Física, Universidad de Antioquia, A.A. 1226 Medellín (Colombia)

    2014-05-01

    In this work, simulations of ferromagnetic/antiferromagnetic multilayers of La{sub 1−x}Ca{sub x}MnO{sub 3} have been carried out by using the Monte Carlo method combined with the Metropolis algorithm and the classical Heisenberg model. In the Hamiltonian we have considered three contributions: nearest neighbor exchange interaction, magnetocrystalline anisotropy and Zeeman interaction. Samples were built by including three types of Mn ions depending on their valence state and type of ionic orbital. Both the number of layers and the antiferromagnetic layer thickness influence on the exchange bias phenomenon are analyzed. Hysteresis loops results exhibit not only a shift as evidence of exchange bias but also the formation of plateaus or steps caused by the presence of more than one interface and the low layers thickness. Each layer presents a strong magnetic behavior because the magneto static energy favors formation of multi-domains in contrast with the single-domains of a single layer FM producing one sub-Loop of each domain (each layer). On the other hand, as the number of layers (n) increases, the sub-cycles tend to disappear. As the plateaus disappear, the system is more effective, increasing the coercive and bias fields. Moreover, domain sizes (layers thickness) also affect the shape of the hysteresis loop. On increasing the thickness of the AFM layer, a decrease in the plateaus produced by the uncoupling is generated.

  14. Coexistence of Weak Ferromagnetism and Polar Lattice Distortion in Epitaxial NiTiO3 thin films of the LiNbO3-Type Structure

    Energy Technology Data Exchange (ETDEWEB)

    Varga, Tamas [Environmental Molecular Sciences Lab., Richland, WA (United States); Droubay, Timothy C. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Bowden, Mark E. [Environmental Molecular Sciences Lab., Richland, WA (United States); Colby, Robert J. [Environmental Molecular Sciences Lab., Richland, WA (United States); Manandhar, Sandeep [Environmental Molecular Sciences Lab., Richland, WA (United States); Shutthanandan, Vaithiyalingam [Environmental Molecular Sciences Lab., Richland, WA (United States); Hu, Dehong [Environmental Molecular Sciences Lab., Richland, WA (United States); Kabius, Bernd C. [Environmental Molecular Sciences Lab., Richland, WA (United States); Apra, Edoardo [Environmental Molecular Sciences Lab., Richland, WA (United States); Shelton, William A. [Environmental Molecular Sciences Lab., Richland, WA (United States); Chambers, Scott A. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2013-04-15

    We report the magnetic and structural characteristics of epitaxial NiTiO3 films grown by pulsed laser deposition that are isostructural with acentric LiNbO3 (space group R3c). Optical second harmonic generation and magnetometry demonstrate lattice polarization at room temperature and weak ferromagnetism below 250 K, respectively. These results appear to be consistent with earlier predictions from first-principles calculations of the coexistence of ferroelectricity and weak ferromagnetism in a series of transition metal titanates crystallizing in the LiNbO3 structure. This acentric form of NiTiO3 is believed to be one of the rare examples of ferroelectrics exhibiting weak ferromagnetism generated by a Dzyaloshinskii-Moriya interaction.

  15. Structure and electrical properties of Na0.5Bi0.5TiO3 ferroelectric thick films derived from a polymer modified sol-gel method.

    Science.gov (United States)

    Ji, Hongfen; Ren, Wei; Wang, Lingyan; Shi, Peng; Chen, Xiaofeng; Wu, Xiaoqing; Yao, Xi; Lau, Sien-Ting; Zhou, Qifa; Shung, K Kirk

    2011-10-01

    Lead-free NaBi(0.5)TiO(3) (NBT) ferroelectric thick films were prepared by a poly(vinylpyrrolidone) (PVP) modified sol-gel method. The NBT thick films annealed from 500°C to 750°C exhibit a perovskite structure. The relationship between annealing temperature, thickness, and electrical properties of the thick films has been investigated. The dielectric constants and remnant polarizations of the thick films increase with annealing temperature. The electrical properties of the NBT films show strong thickness dependence. As thickness increases from 1.0 to 4.8 μm, the dielectric constant of the NBT films increases from 620 to 848, whereas the dielectric loss is nearly independent of the thickness. The remnant polarization of the NBT thick films also increases with increasing thickness. The leakage current density first decreases and then increases with film thickness.

  16. Thickness dependence of the conductivity of thin films (La,Sr)FeO3 deposited on MgO single crystal

    International Nuclear Information System (INIS)

    Mosleh, Majid; Pryds, Nini; Hendriksen, Peter Vang

    2007-01-01

    Thin films of La 0.6 Sr 0.4 FeO 3-δ of different thicknesses have been deposited on single crystal MgO substrate by pulsed laser deposition (PLD). The deposited films are characterized by XRD before and after annealing, by scanning electron microscopy (SEM) for morphological characterization and by the Van der Pauw (VDP) technique for determination of the conductivity. The temperature dependence of the conductivity in air for samples of different thickness has been investigated. The electrical conductivity of the films increases with increasing film thickness but the conductivity of all films is less than the value of the bulk material. The apparent conductivity versus temperature shows a maximum at a certain temperature (T max ). This characteristic temperature (T max ) decreases as the film thickness increases and reaches the value for bulk for thicker films. All of the samples show the same activation energy of the conductivity in the low temperature limit

  17. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  18. Micro-structuring of thick NdFeB films using high-power plasma etching for magnetic MEMS application

    International Nuclear Information System (INIS)

    Jiang, Yonggang; Fujita, Takayuki; Higuchi, Kohei; Maenaka, Kazusuke; Masaoka, Shingo; Uehara, Minoru

    2011-01-01

    This paper describes the micro-patterning of thick NdFeB magnetic films using a high-power plasma etching method. The effects of RF bias power and gas composition on the selectivity and etching rate are experimentally studied. A maximum etching rate of 60 nm min −1 is achieved with an inductively coupled plasma power of 500 W and a RF bias power of 200 W. A maximum selectivity of 0.26 between hard baked AZP4903 photoresist and NdFeB magnetic films is achieved when volumetric Cl 2 concentration is 2.5%. NdFeB micro-magnets as thick as 4.2 µm are achieved by using AZP4903 photoresist. Magnetic film as thick as 10 µm can be patterned by using SU-8 photoresist with a thickness of 100 µm as the mask. The magnetic property of patterned microstructures is characterized using a vibrating sample magnetometer and the magnetic field distribution is measured using a Hall effect sensor IC. The characterization results indicate that the patterned magnetic microstructures have a high magnetic remanance of 1.0 T, which is comparable to that of the non-patterned NdFeB films.

  19. Photocatalytic and photoelectrochemical properties of sol–gel TiO2 films of controlled thickness and porosity

    Czech Academy of Sciences Publication Activity Database

    Krýsa, J.; Baudyš, M.; Zlámal, M.; Krýsová, Hana; Morozová, Magdalena; Klusoň, Petr

    2014-01-01

    Roč. 230, JUL 2014 (2014), s. 2-7 ISSN 0920-5861 Institutional support: RVO:61388955 ; RVO:67985858 Keywords : TiO2 film * Sol-gel * Thickness Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 3.893, year: 2014

  20. Thick Fe2O3, Fe3O4 films prepared by the chemical solution deposition method

    Czech Academy of Sciences Publication Activity Database

    Buršík, Josef; Košovan, P.; Šubrt, Jan

    2006-01-01

    Roč. 39, č. 2 (2006), s. 85-94 ISSN 0928-0707 R&D Projects: GA ČR GA203/01/0408 Institutional research plan: CEZ:AV0Z40320502 Keywords : chemical solution deposition * thick films * alpha-Fe2O3 Subject RIV: CA - Inorganic Chemistry Impact factor: 1.009, year: 2006

  1. Characterization of Films with Thickness Less than 10 nm by Sensitivity-Enhanced Atomic Force Acoustic Microscopy

    Directory of Open Access Journals (Sweden)

    Muraoka Mikio

    2011-01-01

    Full Text Available Abstract We present a method for characterizing ultrathin films using sensitivity-enhanced atomic force acoustic microscopy, where a concentrated-mass cantilever having a flat tip was used as a sensitive oscillator. Evaluation was aimed at 6-nm-thick and 10-nm-thick diamond-like carbon (DLC films deposited, using different methods, on a hard disk for the effective Young's modulus defined as E/(1 - ν2, where E is the Young's modulus, and ν is the Poisson's ratio. The resonant frequency of the cantilever was affected not only by the film's elasticity but also by the substrate even at an indentation depth of about 0.6 nm. The substrate effect was removed by employing a theoretical formula on the indentation of a layered half-space, together with a hard disk without DLC coating. The moduli of the 6-nm-thick and 10-nm-thick DLC films were 392 and 345 GPa, respectively. The error analysis showed the standard deviation less than 5% in the moduli.

  2. Zirconium titanate thin film prepared by surface sol-gel process and effects of thickness on dielectric property

    CERN Document Server

    Kim, C H

    2002-01-01

    Single phase of multicomponent oxide ZrTiO sub 4 film could be prepared through surface sol-gel route simply by coating the mixture of 100mM zirconium butoxide and titanium butoxide on Pt/Ti/SiO sub 2 /Si(100) substrate, following pyrolysis at 450 .deg. C, and annealing it at 770 .deg. C. The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V). The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, t sub i , was dependent on the frequency. It reached a saturated t sub i value, 6.9 A, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO sub 4 pellet-shaped material was 3...

  3. Effects of the thickness of gold deposited on a source backing film in the 4πβ-counting

    International Nuclear Information System (INIS)

    Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

    1976-01-01

    A gold deposited VYNS film as a source backing in the 4πβ-counting has generally been used for reducing the absorption of β-rays. The thickness of the film with the gold is usually a few times thicker than the VYNS film itself. However, Because the appropriate thickness of gold has not yet been determined, the effects of gold thickness on electrical resistivity, plateau characteristics and β-ray counting efficiency were studied. 198 Au (960 keV), 60 Co(315 keV), 59 Fe(273 keV) and 95 Nb(160 keV), which were prepared as sources by the aluminium chloride treatment method, were used. Gold was evaporated under a deposition rate of 1 - 5 μg/cm 2 /min at a pressure less than 1 x 10 -5 Torr. Results show that the gold deposition on the side opposite the source after source preparation is essential. In this case, a maximum counting efficiency is obtained at the mean thickness of 2 μg/cm 2 . When gold is deposited only on the same side as the source, a maximum counting efficiency, which is less than that in the former case, is obtained at the mean thickness of 20 μg/cm 2 . (Evans, J.)

  4. Magnetic properties of Pr-Fe-B thick-film magnets deposited on Si substrates with glass buffer layer

    Science.gov (United States)

    Nakano, M.; Kurosaki, A.; Kondo, H.; Shimizu, D.; Yamaguchi, Y.; Yamashita, A.; Yanai, T.; Fukunaga, H.

    2018-05-01

    In order to improve the magnetic properties of PLD-made Pr-Fe-B thick-film magnets deposited on Si substrates, an adoption of a glass buffer layer was carried out. The glass layer could be fabricated under the deposition rate of approximately 70 μm/h on a Si substrate using a Nd-YAG pulse laser in the vacuum atmosphere. The use of the layer enabled us to reduce the Pr content without a mechanical destruction and enhance (BH)max value by approximately 20 kJ/m3 compared with the average value of non-buffer layered Pr-Fe-B films with almost the same thickness. It is also considered that the layer is also effective to apply a micro magnetization to the films deposited on Si ones.

  5. Time-resolved analysis of thickness-dependent dewetting and ablation of silver films upon nanosecond laser irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Qi, Dongfeng [Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720-1740 (United States); Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005 (China); Paeng, Dongwoo; Yeo, Junyeob; Kim, Eunpa; Wang, Letian; Grigoropoulos, Costas P., E-mail: cgrigoro@berkeley.edu [Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720-1740 (United States); Chen, Songyan [Semiconductor Photonics Research Center, Department of Physics, Xiamen University, Xiamen 361005 (China)

    2016-05-23

    Nanosecond pulsed laser dewetting and ablation of thin silver films is investigated by time-resolved imaging. Laser pulses of 532 nm wavelength and 5 ns temporal width are irradiated on silver films of different thicknesses (50 nm, 80 nm, and 350 nm). Below the ablation threshold, it is observed that the dewetting process does not conclude until 630 ns after the laser irradiation for all samples, forming droplet-like particles in the spot central region. At higher laser intensities, ablative material removal occurs in the spot center. Cylindrical rims are formed in the peripheral dewetting zone due to the solidification of transported matter at about 700 ns following the laser pulse exposure. In addition to these features, droplet fingers are superposed upon irradiation of 350-nm thick silver films with higher intensity.

  6. Directional solidification of YBaCuO thick films deposited by screen printing on Ag and Ag-Pd tapes

    Science.gov (United States)

    Piñol, S.; Najib, M.; Puig, T.; Obradors, X.; Xuriguera, H.; Segarra, M.

    2002-08-01

    Textured tapes of Ag{1 1 0} and polycrystalline tapes of Ag-Pd(0.5-12.5%) alloys have been prepared by cold rolling as possible substrates for deposition of high critical current density YBCO films. The Ag{1 1 0} texture with some twins was promoted by recrystallization after cold rolling from ingots prepared by melting and solidification of Ag powders. Nevertheless, no textured tapes were obtained by cold rolling from Ag-Pd alloys with Pd>0.5%. YBCO thick films (10-30 μm) were deposited on the metallic tapes by screen printing using organic inks. Biaxially textured superconducting thick films were observed on the Ag{1 1 0} substrates at low solidification rates. Nevertheless, uniaxial texture with some biaxial colonies of YBCO grains were found on Ag-Pd alloys when the superconducting phase was solidified at high rate.

  7. Thermoelectric Mixed Thick-/Thin Film Microgenerators Based on Constantan/Silver

    Directory of Open Access Journals (Sweden)

    Mirosław Gierczak

    2018-01-01

    Full Text Available This paper describes the design, manufacturing and characterization of newly developed mixed thick-/thin film thermoelectric microgenerators based on magnetron sputtered constantan (copper-nickel alloy and screen-printed silver layers. The thermoelectric microgenerator consists of sixteen thermocouples made on a 34.2 × 27.5 × 0.25 mm3 alumina substrate. One of thermocouple arms was made of magnetron-sputtered constantan (Cu-Ni alloy, the second was a Ag-based screen-printed film. The length of each thermocouple arm was equal to 27 mm, and their width 0.3 mm. The distance between the arms was equal to 0.3 mm. In the first step, a pattern mask with thermocouples was designed and fabricated. Then, a constantan layer was magnetron sputtered over the whole substrate, and a photolithography process was used to prepare the first thermocouple arms. The second arms were screen-printed onto the substrate using a low-temperature silver paste (Heraeus C8829A or ElectroScience Laboratories ESL 599-E. To avoid oxidation of constantan, they were fired in a belt furnace in a nitrogen atmosphere at 550/450 °C peak firing temperature. Thermoelectric and electrical measurements were performed using the self-made measuring system. Two pyrometers included into the system were used for temperature measurement of hot and cold junctions. The estimated Seebeck coefficient, α was from the range 35 − 41 µV/K, whereas the total internal resistances R were between 250 and 3200 ohms, depending on magnetron sputtering time and kind of silver ink (the resistance of a single thermocouple was between 15.5 and 200 ohms.

  8. Perpendicular Magnetic Anisotropy in Ultrathin Co/Ni Multilayer Films Studies with Ferromagnetic Resonance and Magnetic X-Ray Microspectroscopy

    Science.gov (United States)

    2012-06-28

    consistent with the in-plane anisotropy of the Py layer. The Co hysteresis loops show that the n¼4 and n¼ 6 Co9Ni films have a large remanence and coercive...The other films n¼4 and 6 have a high remanence and submicron scale domain subdivision is not observed in zero field. To summarize, this study

  9. Homogeneity analysis of high yield manufacturing process of mems-based pzt thick film vibrational energy harvesters

    DEFF Research Database (Denmark)

    Lei, Anders; Xu, Ruichao; Pedersen, C.M.

    2011-01-01

    This work presents a high yield wafer scale fabrication of MEMS-based unimorph silicon/PZT thick film vibrational energy harvesters aimed towards vibration sources with peak frequencies in the range of a few hundred Hz. By combining KOH etching with mechanical front side protection, SOI wafer...... to accurately define the thickness of the silicon part of the harvester and a silicon compatible PZT thick film screen-printing technique, we are able to fabricate energy harvesters on wafer scale with a yield higher than 90%. The characterization of the fabricated harvesters is focused towards the full wafer....../mass-production aspect; hence the analysis of uniformity in harvested power and resonant frequency....

  10. Nanostructured SnO2 thick films for gas sensor application: analysis of structural and electronic properties

    Science.gov (United States)

    Miskovic, Goran; Aleksic, Obrad S.; Nikolic, Maria V.; Nicolics, Johann; Radosavljevic, Goran; Vasiljevic, Zorka Z.; Lukovic, Miloljub D.; Smetana, Walter

    2016-03-01

    This research is focused on structural and electrical characterisation of tin oxide (SnO2) applied as a thick film and investigation of its properties as gas sensitive material. Micron sized SnO2 powder was milled in an agate mill for six hours to fabricate SnO2 nanopowder, which was afterwards sieved by 325 mesh sieve and characterized by XRD and SEM. This powder was used as functional part in the production of thick film tin oxide paste containing a resin vehicle with 4 wt. % nanosize glass frits acting as permanent binder. The glass frits where additionally milled for twelve hours in the agate mills to nanosized powder and sieved by a 325 mesh sieve as well. The achieved thick film paste was screen printed on alumina and fired at 850oC peak temperature for 10 minutes in air. After the sintering process, thick film samples where characterized by X-ray powder diffraction (XRD) and scanning electron microscopy (SEM). The reflectivity was measured on the same samples by UV-VIS spectrophotometer: the band gap was determined from the slope of reflectance. After that a matrix of different interdigitated electrode structure of PdAg paste was printed and sintered using the mentioned sintering conditions. The tin oxide thick film was printed over the interdigitated electrodes as a top layer and sintered again under the same conditions. The total electrical resistance was measured as a function of the electrode spacing and temperature. A negative temperature coefficient (NTC) was identified and measured in the range from room temperature (27°C) to 180°C in a climate chamber. Finally the samples were placed into a gas reactor with NOx and CO gas and the resistance was measured in the same temperature range (27°C-200°C).

  11. Investigation of the fabrication parameters of thick film metal oxide-polymer pH electrodes

    International Nuclear Information System (INIS)

    Gac, Arnaud

    2002-01-01

    This thesis describes a study into the development of an optimum material and fabrication process for the production of thick film pH electrodes. These devices consist of low cost, miniature and rugged pH sensors formed by screen printing a metal oxide bearing paste onto a high temperature (∼850 deg C) fired metal back contact supported on a standard alumina substrate. The pH sensitive metal oxide layer must be fabricated at relatively low temperatures (<300 deg C) in order to maintain the pH sensitivity of the layer and hence requires the use of a suitably stable low temperature curing binder. Bespoke fabricated inks are derived from a Taguchi style factorial experimental plans in which, different binder types, curing temperatures, hydration level and percentage mixtures of different metal oxides and layer thicknesses were investigated. The pH responses of 18 printed electrodes per batch were assessed in buffer solutions with respect to a commercial reference electrode forming a complete potentiometric circuit. The evaluation criteria used in the study included the device-to-device variation in sensitivity of the pH sensors and their sensitivity variation as a function of time. The results indicated the importance of the choice of binder type in particular on the performance characteristics. Reproducible device-to-device variation in sensitivity was determined for the best inks found, whatever the ink fabrication batch. A reduction in the sensitivity variation with time has been determined using the mathematical models derived from an experimental plan. The lack of reproducibility of the sensitivity magnitude, regardless of the ink manufacturing batch, seems to be a recurrent problem with prototype inks. Experimental sub-Nernstian responses are discussed in the light of possible pH mechanisms. (author)

  12. LPG and NH3 Sensing Properties of SnO2 Thick Film Resistors Prepared by Screen Printing Technique

    Directory of Open Access Journals (Sweden)

    A. S. GARDE

    2010-11-01

    Full Text Available The gas sensing behavior of SnO2 thick film resistors deposited on alumina substrates has been investigated for LPG and NH3 gas. The standard screen printing technology was used to prepare the thick films. The films were fired at optimized temperature of 780 0C for 30 minutes. The material characterization was performed by XRD, SEM, FTIR, UV and EDAX for elemental analysis. IR spectroscopy analysis at 2949.26 cm-1 showed the peak assigned to the –Sn-H vibration due to the effect of hybridization i.e. sp3 and the sharp peak at 3734.31 cm-1 assigned to –Sn-OH stretching vibration due to hydrogen bonding. The variation of D.C electrical resistance of SnO2 film samples was measured in air as well as in LPG and NH3 gas atmosphere as a function of temperature. The SnO2 film samples show negative temperature coefficient of résistance. The SnO2 film samples showed the highest sensitivity to 600 ppm of LPG at 230 0C and NH3 at 370 0C. The effect of microstructure on sensitivity, response time and recovery time of the sensor in the presence of LPG and NH3 gases were studied and discussed.

  13. Dual-donor (Zn(i) and V(O)) mediated ferromagnetism in copper-doped ZnO micron-scale polycrystalline films: a thermally driven defect modulation process.

    Science.gov (United States)

    Hu, Liang; Huang, Jun; He, Haiping; Zhu, Liping; Liu, Shijiang; Jin, Yizheng; Sun, Luwei; Ye, Zhizhen

    2013-05-07

    The paper reports robust ferromagnetic Cu-doped ZnO micron-scale polycrystalline films via spin-coating using high-quality doped nanocrystals. A reliable magnetic response is observed in the 900 °C vacuum annealed film without any ferromagnetic contribution from other sources. Post-annealing treatment in terms of atmosphere and temperature can control the proportion of oxygen vacancies (V(O)) and zinc interstitials (Zn(i)) defects and further help to precisely regulate defect-related ferromagnetic behavior. Complex charge transfer processes derived from dual-donor (Zn(i) and V(O)) to Cu acceptor are revealed by photoluminescence (PL) and electron paramagnetic resonance (EPR) spectra. Based on the above, specific charge transfer (CT)-type Stoner splitting and indirect double-exchange mechanisms are proposed to understand the ferromagnetic origin. The improvable FM performance and annealing-specific modulation further indicate that a thermal driven process can delicately tailor the magnetic property of the transition metal ion-doped ZnO system.

  14. Dependence on film thickness of grain boundary low-field magnetoresistance in thin films of La0.7Ca0.3MnO3

    International Nuclear Information System (INIS)

    Todd, N. K.; Mathur, N. D.; Blamire, M. G.

    2001-01-01

    The magnetoresistance of grain boundaries in the perovskite manganites is being studied, both in polycrystalline materials, and thin films grown on bicrystal substrates, because of interest in low-field applications. In this article we show that epitaxial films grown on SrTiO 3 bicrystal substrates of 45 degree misorientation show magnetoresistance behavior which is strongly dependent on the thickness of the film. Thin films, e.g., 40 nm, can show a large low-field magnetoresistance at low temperatures, with very sharp switching between distinct high and low resistance states for fields applied in plane and parallel to the boundary. Thicker films show a more complex behavior of resistance as a function of field, and the dependence on the angle between the applied field and the grain boundary is altered. These changes in magnetoresistance behavior are linked to the variation in morphology of the films. Thin films are coherently strained, due to the mismatch with the substrate, and very smooth. Thicker films relax, with the formation of defects, and hence different micromagnetic behavior. [copyright] 2001 American Institute of Physics

  15. Effect of H2 Exposure on TiO2-based Ceramic Thick Films

    Directory of Open Access Journals (Sweden)

    Frade, J. R.

    1999-12-01

    Full Text Available Thick-film sensors based on TiO2 (anatase and rutile and composites of TiO2-Al2O3 and TiO2-Y2O3 have been tested for their electrical response on exposure to H2. Film d.c. resistance was measured in the temperature range 500-650ºC as a function of time and gas-phase composition (air, N2 and 10% H2 in an N2-based stream; the equilibrium gas-phase Po2 was simultaneously monitored with a ZrO2-based oxygen sensor. The detection mechanism of TiO2 to H2 involves the formation of fully ionised oxygen vacancies for both anatase and rutile. The addition of Al2O3 and Y2O3 did little to affect film sensitivity at the tested H2 concentration levels.Los sensores de lámina gruesa basados en TIO2 (Anatasa y rutilo y materiales compuestos de TiO2-Al203 y TiO2-Y2O3 han sido evaluados en función de su respuesta eléctrica a la exposición de H2. La resistencia d.c. de las láminas fue medida en el rango de temperaturas de 500-560ºC en función del tiempo y la composición de la fase gaseosa (aire, N2 y 10% H2 en un vapor basado en N2; el equilibrio de P02 de la fase gaseosa fue simultáneamente monitorizado con un sensor de oxígeno basado en ZrO2. El mecanismo de detección del H2 por el TiO2 incluye la formación de vacantes de oxígeno totalmente ionizadas por la anatasa y el rutilo. La adición de Al2O3 y Y2O3 apenas afecta la sensibilidad de la lámina en los niveles de H2 evaluados.

  16. Epitaxial patterning of nanometer-thick Y3Fe5O12 films with low magnetic damping.

    Science.gov (United States)

    Li, Shaozhen; Zhang, Wei; Ding, Junjia; Pearson, John E; Novosad, Valentine; Hoffmann, Axel

    2016-01-07

    Magnetic insulators such as yttrium iron garnet, Y3Fe5O12, with extremely low magnetic damping have opened the door for low power spin-orbitronics due to their low energy dissipation and efficient spin current generation and transmission. We demonstrate here reliable and efficient epitaxial growth and nanopatterning of Y3Fe5O12 thin-film based nanostructures on insulating Gd3Ga5O12 substrates. In particular, our fabrication process is compatible with conventional sputtering and lift-off, and does not require aggressive ion milling which may be detrimental to the oxide thin films. Their structural and magnetic properties indicate good qualities, in particular low magnetic damping of both films and patterned structures. The dynamic magnetic properties of the nanostructures are systematically investigated as a function of the lateral dimension. By comparing with ferromagnetic nanowire structures, a distinct edge mode in addition to the main mode is identified by both experiments and simulations, which also exhibit cross-over with the main mode upon varying the width of the wires. The non-linear evolution of dynamic modes over nanostructural dimensions highlights the important role of size confinement to their material properties in magnetic devices where Y3Fe5O12 nanostructures serve as the key functional component.

  17. Preparation of a high-quality PZT thick film with performance comparable to those of bulk materials for applications in MEMS

    Science.gov (United States)

    Xu, Xiao-Hui; Chu, Jia-Ru

    2008-06-01

    High-quality lead zirconate titanate (PZT) thick films have been prepared on silicon substrates by combining PZT-Si bonding and wet-etching technology. The bulk PZT wafer was first bonded to the silicon substrate using a 2 µm thick intermediate layer of epoxy resin with a bonding strength higher than 10 MPa. Then the bulk PZT was thinned by a wet-etching method. The thickness of the final PZT films depends on the etching time. The PZT thick films after being polished showed a surface roughness of about 20 nm (RMS), which can satisfy most of the requirements in MEMS. The prepared PZT thick films show a dielectric constant as high as 2400 below 100 kHz, remnant polarization of 13 µC cm-2, piezoelectric constant d31 of about -280 pm V-1 and Young's modulus of about 63 GPa. The measured electromechanical properties of the PZT thick films were comparable to those of the corresponding bulk ceramics. This approach makes it possible to obtain high-quality PZT films because it separates the PZT wafer fabrication from the target substrate and consequently allows integration of the PZT thick films onto many kinds of substrates. Finally, a self-sensing bulk PZT thick film actuator was fabricated as an example of a basic PZT-Si diaphragm structure that can be used in piezoelectric micropumps, and its sensing and actuating performances were also demonstrated.

  18. Large interfacial exchange fields in a thick superconducting film coupled to a spin-filter tunnel barrier

    Science.gov (United States)

    Pal, Avradeep; Blamire, M. G.

    2015-11-01

    The differential conductance of NbN/GdN/TiN superconductor/ferromagnetic insulator/normal-metal junctions, with a thick NbN layer shows a large zero-field voltage offset interpreted as a spin-filtered Zeeman splitting of the NbN density of states by an effective exchange field (H0) from the GdN. The splitting increases linearly, with applied field (Hext) enabling the relative sign of H0 and Hext to be determined. We show that the short NbN coherence length concentrates H0 at the NbN/GdN interface and eliminates any averaging over the GdN domain structure leading to a large zero-field splitting.

  19. Design and construction of a device for elaborate films of Vyns or Cellulose with control thickness

    International Nuclear Information System (INIS)

    Patlan C, F.

    1998-01-01

    This work is a part of the studies about the elaboration of reference radioactive sources, which are done in the National Institute of Nuclear Research in Mexico. Specially concerns with the elaboration of α-β radioactive sources. The importance of this work is because their applications increase day by day. Medicine, engineering, agriculture and even the arts cannot escape to the influence and impact of the nuclear sciences. But, what are the radioactive sources?, what is a holder of a radioactive source?, why we elaborate holders with special materials?, which is the best technique to elaborate them?. These topics are commented in this work. The material is as follows: the introduction and objective are described in chapter one. The second chapter deals with concepts about atomic and molecular structures, general description of nuclear radiation and their characteristics, comments about radioactive law decay, interaction of the alpha particles with the matter and a short description about surface barrier detectors. The different methods for elaborate a radioactive source holders are described in the chapter three. This same chapter speaks the topic about the elaboration of vyns or cellulose films and a device is proposed for make them; are some methods described how to take measure of their thickness. Chapter four shows the results, analysis and the respective conclusions. (Author)

  20. High performance hard magnetic NdFeB thick films for integration into micro-electro-mechanical systems

    International Nuclear Information System (INIS)

    Dempsey, N. M.; Walther, A.; May, F.; Givord, D.; Khlopkov, K.; Gutfleisch, O.

    2007-01-01

    5 μm thick NdFeB films have been sputtered onto 100 mm Si substrates using high rate sputtering (18 μm/h). Films were deposited at ≤500 deg. C and then annealed at 750 deg. C for 10 min. While films deposited at temperatures up to 450 deg. C have equiaxed grains, the size of which decreases with increasing deposition temperature, the films deposited at 500 deg. C have columnar grains. The out-of-plane remanent magnetization increases with deposition temperature, reaching a maximum value of 1.4 T, while the coercivity remains constant at about 1.6 T. The maximum energy product achieved (400 kJ/m 3 ) is comparable to that of high-quality NdFeB sintered magnets