Annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films

Energy Technology Data Exchange (ETDEWEB)

Alves, M. J. P.; Gonzalez-Chavez, D. E.; Sommer, R. L. [Centro Brasileiro de Pesquisas Físicas, Rua Dr. Xavier Sigaud 150, Urca, 22290-180 Rio de Janeiro, RJ (Brazil); Bohn, F. [Departamento de Física Teórica e Experimental, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

2015-03-28

We systematically investigate the annealing effects on the microwave linewidth broadening of FeCuNbSiB ferromagnetic films with thickness of 100 nm. We correlate the non-uniform residual stress obtained from grazing incidence x-ray diffraction measurements with the ferromagnetic resonance (FMR) linewidth due to effective field inhomogeneities measured from broadband ferromagnetic resonance absorption measurements. We also estimate the annealing temperature effect on the Gilbert and two-magnon scattering contributions to the total ferromagnetic resonance FMR linewidth. We show that the effective field inhomogeneities constitute the main contribution to the microwave linewidth, while this contribution is related to the non-uniform residual stress in the films which is reduced by thermal annealing.

Spin-wave resonance frequency in ferromagnetic thin film with interlayer exchange coupling and surface anisotropy

Science.gov (United States)

Zhang, Shuhui; Rong, Jianhong; Wang, Huan; Wang, Dong; Zhang, Lei

2018-01-01

We have investigated the dependence of spin-wave resonance(SWR) frequency on the surface anisotropy, the interlayer exchange coupling, the ferromagnetic layer thickness, the mode number and the external magnetic field in a ferromagnetic superlattice film by means of the linear spin-wave approximation and Green's function technique. The SWR frequency of the ferromagnetic thin film is shifted to higher values corresponding to those of above factors, respectively. It is found that the linear behavior of SWR frequency curves of all modes in the system is observed as the external magnetic field is increasing, however, SWR frequency curves are nonlinear with the lower and the higher modes for different surface anisotropy and interlayer exchange coupling in the system. In addition, the SWR frequency of the lowest (highest) mode is shifted to higher (lower) values when the film thickness is thinner. The interlayer exchange coupling is more important for the energetically higher modes than for the energetically lower modes. The surface anisotropy has a little effect on the SWR frequency of the highest mode, when the surface anisotropy field is further increased.

Anomalous Hall effect scaling in ferromagnetic thin films

KAUST Repository

Grigoryan, Vahram L.

2017-10-23

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Anomalous Hall effect scaling in ferromagnetic thin films

KAUST Repository

Grigoryan, Vahram L.; Xiao, Jiang; Wang, Xuhui; Xia, Ke

2017-01-01

We propose a scaling law for anomalous Hall effect in ferromagnetic thin films. Our approach distinguishes multiple scattering sources, namely, bulk impurity, phonon for Hall resistivity, and most importantly the rough surface contribution to longitudinal resistivity. In stark contrast to earlier laws that rely on temperature- and thickness-dependent fitting coefficients, this scaling law fits the recent experimental data excellently with constant parameters that are independent of temperature and film thickness, strongly indicating that this law captures the underlying physical processes. Based on a few data points, this scaling law can even fit all experimental data in full temperature and thickness range. We apply this law to interpret the experimental data for Fe, Co, and Ni and conclude that (i) the phonon-induced skew scattering is unimportant as expected; (ii) contribution from the impurity-induced skew scattering is negative; (iii) the intrinsic (extrinsic) mechanism dominates in Fe (Co), and both the extrinsic and intrinsic contributions are important in Ni.

Spin-transfer torque in tunnel junctions with ferromagnetic layer of finite thickness

International Nuclear Information System (INIS)

Wilczynski, M.

2011-01-01

Two components of the spin torque exerted on a free ferromagnetic layer of finite thickness and a half-infinite ferromagnetic electrode in single tunnel junctions have been calculated in the spin-polarized free-electron-like one-band model. It has been found that the torque oscillates with the thickness of ferromagnetic layer and can be enhanced in the junction with the special layer thickness. The bias dependence of torque components also significantly changes with layer thickness. It is non-symmetric for the normal torque, in contrast to the symmetric junctions with two identical half-infinite ferromagnetic electrodes. The asymmetry of the bias dependence of the normal component of the torque can be also observed in the junctions with different spin splitting of the electron bands in the ferromagnetic electrodes. - Research highlights: → The torque oscillates with the thickness of ferromagnetic layer. → Bias dependence of the torque changes with the layer thickness. → Bias dependence of the normal torque can be asymmetric.

Ferromagnetism appears in nitrogen implanted nanocrystalline diamond films

Energy Technology Data Exchange (ETDEWEB)

Remes, Zdenek [Institute of Physics ASCR v.v.i., Cukrovarnicka 10, 162 00 Prague 6 (Czech Republic); Sun, Shih-Jye, E-mail: sjs@nuk.edu.tw [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Varga, Marian [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Chou, Hsiung [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Hsu, Hua-Shu [Department of Applied Physics, National Pingtung University of Education, Pingtung 900, Taiwan (China); Kromka, Alexander [Department of Applied Physics, National University of Kaohsiung, Kaohsiung 811, Taiwan (China); Horak, Pavel [Nuclear Physics Institute, 250 68 Rez (Czech Republic)

2015-11-15

The nanocrystalline diamond films turn to be ferromagnetic after implanting various nitrogen doses on them. Through this research, we confirm that the room-temperature ferromagnetism of the implanted samples is derived from the measurements of magnetic circular dichroism (MCD) and superconducting quantum interference device (SQUID). Samples with larger crystalline grains as well as higher implanted doses present more robust ferromagnetic signals at room temperature. Raman spectra indicate that the small grain-sized samples are much more disordered than the large grain-sized ones. We propose that a slightly large saturated ferromagnetism could be observed at low temperature, because the increased localization effects have a significant impact on more disordered structure. - Highlights: • Nitrogen implanted nanocrystalline diamond films exhibit ferromagnetism at room temperature. • Nitrogen implants made a Raman deviation from the typical nanocrystalline diamond films. • The ferromagnetism induced from the structure distortion is dominant at low temperature.

Phase diagrams of site diluted ferromagnetic thin film

International Nuclear Information System (INIS)

Hamedoun, M.; Bouslykhane, K.; Bakrim, H.; Hourmatallah, A.; Benzakour, N.; Masrour, R.

2006-01-01

The phase transition properties of Ising, classical XY and Heisenberg of diluted ferromagnetic thin film are studied by the method of exact high-temperature series expansions extrapolated with the Pade approximants method. The reduced critical temperature τ c of the diluted ferromagnetic thin films is studied as a function of film thickness L and the exchange interactions in the bulk J b , in the surface J s and between surface and nearest-neighbour layer J - bar . It is found that τ c increases with the exchange interactions of surface and L. The magnetic phase diagram (τ c versus dilution x) is obtained. A critical value of the surface exchange interaction above which the surface magnetism appears is obtained. The dependence of the critical parameter of surface reduced coupling R 2 c as a function of the dilution x and the ratio of the exchange interaction between the surface and nearest-neighbour layer to the bulk one R 1 for the three studied models has been investigated. The percolation threshold is defined as the concentration x p at which τ c =0. The obtained values are x p ∼0.2 in the bulk and x p ∼0.4 at the surface

Skyrmion clusters from Bloch lines in ferromagnetic films

KAUST Repository

Garanin, Dmitry A.

2017-12-29

Conditions under which various skyrmion objects emerge in experiments on thin magnetic films remain largely unexplained. We investigate numerically centrosymmetric spin lattices in films of finite thickness with ferromagnetic exchange, magnetic anisotropy, and dipole-dipole interaction. Evolution of labyrinth domains into compact topological structures on application of the magnetic field is found to be governed by the configuration of Bloch lines inside domain walls. Depending on the combination of Bloch lines, the magnetic domains evolve into individual skyrmions, biskyrmions, or more complex topological objects. While the geometry of such objects is sensitive to the parameters, their topological charge is uniquely determined by the topological charge of Bloch lines inside the magnetic domain from which the object emerges.

Ferromagnetism and temperature-dependent electronic structure in metallic films

International Nuclear Information System (INIS)

Herrmann, T.

1999-01-01

In this work the influence of the reduced translational symmetry on the magnetic properties of thin itinerant-electron films and surfaces is investigated within the strongly correlated Hubbard model. Firstly, the possibility of spontaneous ferromagnetism in the Hubbard model is discussed for the case of systems with full translational symmetry. Different approximation schemes for the solution of the many-body problem of the Hubbard model are introduced and discussed in detail. It is found that it is vital for a reasonable description of spontaneous ferromagnetism to be consistent with exact results concerning the general shape of the single-electron spectral density in the limit of strong Coulomb interaction between the electrons. The temperature dependence of the ferromagnetic solutions is discussed in detail by use of the magnetization curves as well as the spin-dependent quasi particle spectrum. For the investigation of thin films and surfaces the approximation schemes for the bulk system have to be generalized to deal with the reduced translational symmetry. The magnetic behavior of thin Hubbard films is investigated by use of the layer dependent magnetization as a function of temperature as well as the thickness of the film. The Curie-temperature is calculated as a function of the film thickness. Further, the magnetic stability at the surface is discussed in detail. Here it is found that for strong Coulomb interaction the magnetic stability at finite temperatures is reduced at the surface compared to the inner layers. This observation clearly contradicts the well-known Stoner picture of band magnetism and can be explained in terms of general arguments which are based on exact results in the limit of strong Coulomb interaction. The magnetic behavior of the Hubbard films can be analyzed in detail by inspecting the local quasi particle density of states as well as the wave vector dependent spectral density. The electronic structure is found to be strongly spin

Soft magnetic properties of hybrid ferromagnetic films with CoFe, NiFe, and NiFeCuMo layers

Energy Technology Data Exchange (ETDEWEB)

Choi, Jong-Gu [Eastern-western Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of); Hwang, Do-Guwn [Dept. of Oriental Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of); Rhee, Jang-Roh [Dept. of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of); Lee, Sang-Suk, E-mail: sslee@sangji.ac.kr [Dept. of Oriental Biomedical Engineering, Sangji University, Wonju 220-702 (Korea, Republic of)

2011-09-30

Two-layered ferromagnetic alloy films (NiFe and CoFe) with intermediate NiFeCuMo soft magnetic layers of different thicknesses were investigated to understand the relationship between coercivity and magnetization process by taking into account the strength of hard-axis saturation field. The thickness dependence of H{sub EC} (easy-axis coercivity), H{sub HS} (hard-axis saturation field), and {chi} (susceptibility) of the NiFeCuMo thin films in glass/Ta(5 nm)/[CoFe or NiFe(5 nm-t/2)]/NiFeCuMo(t = 0, 4, 6, 8, 10 nm)/[CoFe or NiFe(5 nm-t/2)]/Ta(5 nm) films prepared using the ion beam deposition method was determined. The magnetic properties (H{sub EC}, H{sub HS}, and {chi}) of the ferromagnetic CoFe, NiFe three-layers with an intermediate NiFeCuMo super-soft magnetic layer were strongly dependent on the thickness of the NiFeCuMo layer.

Effects of surface and bulk transverse fields on critical behaviour of ferromagnetic films

International Nuclear Information System (INIS)

Saber, A.; Lo Russo, S.; Mattei, G.

2002-02-01

The influence of surface and bulk transverse fields on the critical behaviour of a ferromagnetic Ising film is studied using the effective field theory based on a single-site cluster method. Surface exchange enhancement is considered and a critical value is obtained. The dependence of the critical uniform transverse field on film thickness, phase diagrams in the fields, critical surface transverse field versus the bulk one, and exchange coupling ratio are presented. (author)

Magnetic properties and microstructure investigation of electrodeposited FeNi/ITO films with different thickness

International Nuclear Information System (INIS)

Cao, Derang; Wang, Zhenkun; Feng, Erxi; Wei, Jinwu; Wang, Jianbo; Liu, Qingfang

2013-01-01

Highlights: •FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates by electrodeposition method. •A columnar crystalline microstructure and domain structure were obtained in FeNi thin films. •Particular FMR spectra of FeNi alloy with different thickness were studied. -- Abstract: FeNi alloy thin films with different thickness deposited on Indium Tin Oxides (ITOs) conductive glass substrates from the electrolytes by electrodeposition method have been studied by magnetic force microscopy (MFM), scanning electron microscopy (SEM) and ferromagnetic resonance (FMR) technique. For these films possessing an in-plane isotropy, the remanence decreases with the increasing of film thickness and the critical thickness that a stripe domain structure emerges is about 116 nm. Characteristic differences of the FMR spectra of different thickness are also observed. The results show that the resonance field at high measured angle increases firstly then decreases with increasing thickness, which may be related to the striped domain structure

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Ferromagnetic transitions of a spin-one Ising film in a surface and bulk transverse fields

International Nuclear Information System (INIS)

Saber, A.; Lo Russo, S.; Mattei, G.; Mattoni, A.

2002-01-01

Using the effective field theory method, we have calculated the Curie temperature of a spin-one Ising ferromagnetic film in a surface and bulk transverse fields. Numerical calculations give phase diagrams under various parameters. Surface exchange enhancement is considered. The dependence of the critical transverse field on film thickness, and phase diagrams in the fields, critical surface transverse field versus the bulk one are presented

Chemical solution synthesis and ferromagnetic resonance of epitaxial thin films of yttrium iron garnet

Science.gov (United States)

Lucas, Irene; Jiménez-Cavero, Pilar; Vila-Fungueiriño, J. M.; Magén, Cesar; Sangiao, Soraya; de Teresa, José Maria; Morellón, Luis; Rivadulla, Francisco

2017-12-01

We report the fabrication of epitaxial Y3F e5O12 (YIG) thin films on G d3G a5O12 (111) using a chemical solution method. Cubic YIG is a ferrimagnetic material at room temperature, with excellent magneto-optical properties, high electrical resistivity, and a very narrow ferromagnetic resonance, which makes it particularly suitable for applications in filters and resonators at microwave frequencies. But these properties depend on the precise stoichiometry and distribution of F e3 + ions among the octahedral/tetrahedral sites of a complex structure, which hampered the production of high-quality YIG thin films by affordable chemical methods. Here we report the chemical solution synthesis of YIG thin films, with excellent chemical, crystalline, and magnetic homogeneity. The films show a very narrow ferromagnetic resonance (long spin relaxation time), comparable to that obtained from high-vacuum physical deposition methods. These results demonstrate that chemical methods can compete to develop nanometer-thick YIG films with the quality required for spintronic devices and other high-frequency applications.

A method for measuring exchange stiffness in ferromagnetic films

International Nuclear Information System (INIS)

Girt, Erol; Huttema, W.; Montoya, E.; Kardasz, B.; Eyrich, C.; Heinrich, B.; Mryasov, O. N.; Dobin, A. Yu.; Karis, O.

2011-01-01

An exchange stiffness, A ex , in ferromagnetic films is obtained by fitting the M(H) dependence of two ferromagnetic layers antiferromagnetically coupled across a nonmagnetic spacer layer with a simple micromagnetic model. In epitaxial and textured structures this method allows measuring A ex between the crystallographic planes perpendicular to the growth direction of ferromagnetic films. Our results show that A ex between [0001] planes in textured Co grains is 1.54 ± 0.12 x 10 -11 J/m.

The phase diagrams of a ferromagnetic thin film in a random magnetic field

Energy Technology Data Exchange (ETDEWEB)

Zaim, N.; Zaim, A., E-mail: ah_zaim@yahoo.fr; Kerouad, M., E-mail: m.kerouad@fs-umi.ac.ma

2016-10-07

In this paper, the magnetic properties and the phase diagrams of a ferromagnetic thin film with a thickness N in a random magnetic field (RMF) are investigated by using the Monte Carlo simulation technique based on the Metropolis algorithm. The effects of the RMF and the surface exchange interaction on the critical behavior are studied. A variety of multicritical points such as tricritical points, isolated critical points, and triple points are obtained. It is also found that the double reentrant phenomenon can appear for appropriate values of the system parameters. - Highlights: • Phase diagrams of a ferromagnetic thin film are examined by the Monte Carlo simulation. • The effect of the random magnetic field on the magnetic properties is studied. • Different types of the phase diagrams are obtained. • The dependence of the magnetization and susceptibility on the temperature are investigated.

Ferromagnetic resonance and spin-wave resonances in GaMnAsP films

Science.gov (United States)

Liu, Xinyu; Li, Xiang; Bac, Seul-Ki; Zhang, Xucheng; Dong, Sining; Lee, Sanghoon; Dobrowolska, Margaret; Furdyna, Jacek K.

2018-05-01

A series of Ga1-xMnxAs1-yPy films grown by MBE on GaAs (100) substrates was systematically studied by ferromagnetic resonance (FMR). Magnetic anisotropy parameters were obtained by analyzing the angular dependence of the FMR data. The results clearly show that the easy axis of the films shifts from the in-plane [100] direction to the out-of-plane [001], indicating the emergence of a strong tensile-strain-induced perpendicular anisotropy when the P content exceeds y ≈ 0.07. Multiple resonances were observed in Ga1-xMnxAs1-yPy films with thicknesses over 48 nm, demonstrating the existence of exchange-dominated non-propagating spin-wave modes governed by surface anisotropy.

Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Prater, John T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States); Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Punugupati, Sandhyarani; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

2016-04-04

We report on the ferromagnetic-like behavior in otherwise diamagnetic BaTiO{sub 3} (BTO) thin films upon doping with non-magnetic element Sr having the composition Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST). The epitaxial integration of BST (∼800 nm) thick films on Si (100) substrate was achieved using MgO (40 nm) and TiN (20 nm) as buffer layers to prepare BST/MgO/TiN/Si (100) heterostructure by pulsed laser deposition. The c-axis oriented and cube-on-cube epitaxial BST is formed on Si (100) as evidenced by the in-plane and out-of-plane X-ray diffraction. All the deposited films are relaxed through domain matching epitaxy paradigm as observed from X-ray diffraction pattern and A{sub 1}TO{sub 3} mode (at 521.27 cm{sup −1}) of Raman spectra. As-deposited BST thin films reveal ferromagnetic-like properties, which persist up to 400 K. The magnetization decreases two-fold upon oxygen annealing. In contrast, as-deposited un-doped BTO films show diamagnetism. Electron spin resonance measurements reveal no evidence of external magnetic impurities. XRD and X-ray photoelectron spectroscopy spectra show significant changes influenced by Sr doping in BTO. The ferromagnetic-like behavior in BST could be due to the trapped electron donors from oxygen vacancies resulting from Sr-doping.

Unexpected large room-temperature ferromagnetism in porous Cu{sub 2}O thin films

Energy Technology Data Exchange (ETDEWEB)

Hou, Xue [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

2015-05-15

Porous Cu{sub 2}O films have been fabricated on porous anodic alumina substrates using DC-reactive magnetron sputtering with pure Cu targets, and unexpectedly large room temperature ferromagnetism has been observed in the films. The maximum saturation magnetic moment along the out-of-plane direction was as high as 94 emu/cm{sup 3}. Photoluminescence spectra show that the ferromagnetism originates with oxygen vacancies. The ferromagnetism could be adjusted by changing the concentration of oxygen vacancies through annealing in an oxygen atmosphere. These observations suggest that the origin of the ferromagnetism is due to coupling between oxygen vacancies with local magnetic moments in the porous Cu{sub 2}O films, which can occur either directly through exchange interactions between oxygen vacancies, or through the mediation of conduction electrons. Such a ferromagnet without the presence of any ferromagnetic dopant may find applications in spintronic devices. - Highlights: • Porous Cu{sub 2}O films were deposited on porous anodic alumina (PAA) substrates. • Significant room-temperature ferromagnetism has been observed in porous Cu{sub 2}O films. • Ferromagnetism of Cu{sub 2}O films exhibited different magnetic signals with the field. • The saturation magnetization is 94 emu/cm{sup 3} with an out-of-plane.

Strain-Induced Ferromagnetism in Antiferromagnetic LuMnO3 Thin Films

Science.gov (United States)

White, J. S.; Bator, M.; Hu, Y.; Luetkens, H.; Stahn, J.; Capelli, S.; Das, S.; Döbeli, M.; Lippert, Th.; Malik, V. K.; Martynczuk, J.; Wokaun, A.; Kenzelmann, M.; Niedermayer, Ch.; Schneider, C. W.

2013-07-01

Single phase and strained LuMnO3 thin films are discovered to display coexisting ferromagnetic and antiferromagnetic orders. A large moment ferromagnetism (≈1μB), which is absent in bulk samples, is shown to display a magnetic moment distribution that is peaked at the highly strained substrate-film interface. We further show that the strain-induced ferromagnetism and the antiferromagnetic order are coupled via an exchange field, therefore demonstrating strained rare-earth manganite thin films as promising candidate systems for new multifunctional devices.

Intrinsic and spatially nonuniform ferromagnetism in Co-doped ZnO films

Science.gov (United States)

Tseng, L. T.; Suter, A.; Wang, Y. R.; Xiang, F. X.; Bian, P.; Ding, X.; Tseng, A.; Hu, H. L.; Fan, H. M.; Zheng, R. K.; Wang, X. L.; Salman, Z.; Prokscha, T.; Suzuki, K.; Liu, R.; Li, S.; Morenzoni, E.; Yi, J. B.

2017-09-01

Co doped ZnO films have been deposited by a laser-molecular beam epitaxy system. X-ray diffraction and UV spectra analysis show that Co effectively substitutes the Zn site. Transmission electron microscopy (TEM) and secondary ion mass spectroscopy analysis indicate that there are no clusters. Co dopants are uniformly distributed in ZnO film. Ferromagnetic ordering is observed in all samples deposited under an oxygen partial pressure, PO2=10-3 , 10-5, and 10-7 torr, respectively. However, the magnetization of PO2=10-3 and 10-5 is very small at room temperature. At low temperature, the ferromagnetic ordering is enhanced. Muon spin relaxation (μ SR ) measurements confirm the ferromagnetism in all samples, and the results are consistent with magnetization measurements. From μ SR and TEM analysis, the film deposited under PO2=10-7 torr shows intrinsic ferromagnetism. However, the volume fraction of the ferromagnetism phase is approximately 70%, suggesting that the ferromagnetism is not carrier mediated. Resistivity versus temperature measurements indicate Efros variable range hopping dominates the conductivity. From the above results, we can confirm that a bound magnetic polaron is the origin of the ferromagnetism.

Origin of room temperature ferromagnetic moment in Rh-rich [Rh/Fe] multilayer thin films

International Nuclear Information System (INIS)

Kande, Dhishan; Laughlin, David; Zhu Jiangang

2010-01-01

B2 ordered FeRh thin films switch from antiferromagnetic (AFM) to ferromagnetic (FM) state on heating above 350 K and switch back on cooling, with a hysteresis. This property makes FeRh a very attractive choice as a write-assist layer material for low temperature heat assisted magnetic recording (HAMR) media. Studies have shown that as we decrease the thickness of the FeRh films, the B2 phase is no longer AFM even below 350 K and there is a thickness dependant FM stabilization of the B2 phase. It was also proved that slightly Rh-richer compositions (>50 at. % Rh) were more preferable to stabilize the AFM phase. The current study focuses on growing highly ordered FeRh films by alternate layer rf sputtering of thin layers of iron and rhodium onto a heated substrate. It has been shown that films with rhodium content beyond 55 at. % contain a disordered bcc FM phase which gives rise to residual moment at room temperature even for thicker films.

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

Science.gov (United States)

Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-07-01

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

International Nuclear Information System (INIS)

Singh, Akhilesh Kumar; Hsu, Jen-Hwa; Perumal, Alagarsamy

2016-01-01

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)] 2 /FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T A =200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T A ≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T A =300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T A and temperature. A large reduction in coercivity (H C ) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H C (T), i.e., a broad minimum in H C (T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H C (T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T C ) with T A (x). The multilayer films annealed at 200 °C exhibit low value of T C with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T C with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and nature of interfaces. - Highlights: • Preparation and

Magnetic properties of permalloy films with different thicknesses deposited onto obliquely sputtered Cu underlayers

International Nuclear Information System (INIS)

Li, Xiaoyu; Sun, Xiaojun; Wang, Jianbo; Liu, Qingfang

2015-01-01

In this work, the influence of obliquely sputtered Cu underlayer of 10 nm on the magnetic properties of normally sputtered Permalloy thin films with different thicknesses from 10 nm to 150 nm has been investigated. It has been found that the samples with the Permalloy layer thickness ranging from 10 nm to 70 nm exhibit a good in-plane uniaxial magnetic anisotropy, and the increase of the film thickness leads to a decrease of the anisotropy field and the natural resonance frequency. The critical Permalloy layer thickness for stripe domain initiation of these films is about 80 nm, which is thinner than that of obliquely sputtered Permalloy thin films without an underlayer. The characteristic shapes of hysteresis loops which can be called ''transcritical'' are observed above the critical thickness. The condition and mechanism of appearing stripe domain structure were discussed and it has been found that the frequency response of permeability of the anisotropic films shows the characteristics of multi-peak resonance. - Highlights: • Py films were fabricated on obliquely sputtered Cu underlayers by RF magnetron sputtering. • Effects of Py layer thickness on anisotropy, ferromagnetic resonance frequency have been studied. • Samples with Py layer (<70 nm) show a good in-plane uniaxial magnetic anisotropy. • Samples with Py layer (>80 nm) show stripe domains and multi-peaks in permeability spectra

Equilibrium helium film in the thick film limit

International Nuclear Information System (INIS)

Klier, J.; Schletterer, F.; Leiderer, P.; Shikin, V.

2003-01-01

For the thickness of a liquid or solid quantum film, like liquid helium or solid hydrogen, there exist still open questions about how the film thickness develops in certain limits. One of these is the thick film limit, i.e., the crossover from the thick film to bulk. We have performed measurements in this range using the surface plasmon resonance technique and an evaporated Ag film deposited on glass as substrate. The thickness of the adsorbed helium film is varied by changing the distance h of the bulk reservoir to the surface of the substrate. In the limiting case, when h > 0, the film thickness approaches about 100 nm following the van der Waals law in the retarded regime. The film thickness and its dependence on h is precisely determined and theoretically modeled. The equilibrium film thickness behaviour is discussed in detail. The agreement between theory and experiment is very good

Phenomenology of the domain walls in thin ferromagnetic films

International Nuclear Information System (INIS)

Adam, G.

1978-01-01

The basic concepts and the main theoretical methods developed in the study of the domain walls in thin ferromagnetic films are given in this review. First, an insight into the origins and the classification criteria of the conceptually different wall structures is obtained by elementary considerations which are mainly based on the experimentally available data. Then, the more subtle aspect of the wall models dimensionality in soft ferromagnetic films is discussed. Finally, the various theoretical calculation methods of the wall parameters are summarized. (author)

Investigation of ferromagnetism in oxygen deficient hafnium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Hildebrandt, Erwin; Kurian, Jose; Krockenberger, Yoshiharu; Alff, Lambert [Institut fuer Materialwissenschaft, TU Darmstadt (Germany); Suter, Andreas [PSI, Villingen (Switzerland); Wilhelm, Fabrice; Rogalev, Andrei [ESRF, Grenoble (France)

2008-07-01

Oxygen deficient thin films of hafnium oxide were grown on single crystal r-cut and c-cut sapphire by reactive molecular beam epitaxy. RF-activated oxygen was used for the in situ oxidation of hafnium oxide thin films. Oxidation conditions were varied substantially in order to create oxygen deficiency in hafnium oxide films intentionally. The films were characterized by X-ray and magnetic measurements. X-ray diffraction studies show an increase in lattice parameter with increasing oxygen deficiency. Oxygen deficient hafnium oxide thin films also showed a decreasing bandgap with increase in oxygen deficiency. The magnetisation studies carried out with SQUID did not show any sign of ferromagnetism in the whole oxygen deficiency range. X-ray magnetic circular dichroism measurements also confirmed the absence of ferromagnetism in oxygen deficient hafnium oxide thin films.

Effect of the thickness reduction on the structural, surface and magnetic properties of α-Fe{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Aragón, Fermin F.H., E-mail: fherrera@fis.unb.br [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Ardisson, José D. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Aquino, Juan C.R. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil); Gonzalez, Ismael; Macedo, Waldemar A.A. [Centro de Desenvolvimento da Tecnologia Nuclear, CDTN, 31270-901 Belo Horizonte, MG (Brazil); Coaquira, José A.H.; Mantilla, John; Silva, Sebastião W. da; Morais, Paulo C. [Núcleo de Física Aplicada, Instituto de Física, Universidade de Brasília, Brasília, DF 70910-900 (Brazil)

2016-05-31

Hematite (α-Fe{sub 2}O{sub 3}) polycrystalline thin films of different thicknesses were produced by thermal oxidation in air atmosphere from Fe metallic thin-films deposited by radio frequency (RF) sputtering technique. X-ray diffraction (XRD) patterns confirm the formation of hematite phase in all samples and indicate that the mean grain size decreases as the film thickness becomes thinner. Conversion electron Mössbauer spectroscopy (CEMS) spectra at room temperature show magnetic splitting (six line patterns). It is determined that the resonance peaks become broader and asymmetric as the film thickness decreases. This finding was associated with the structural disorder introduced by the thickness reduction. Magnetization as a function of the magnetic field curve obtained at 300 K shows the presence of a weak-ferromagnetic contribution, which was assigned to the large density of decompensated spins at the films surface. From the magnetization vs. temperature curves it has been determined that the Morin transition temperature (T{sub M}) is shifted from ~ 240 K to ~ 196 K, meanwhile it becomes more broadened as the film thickness decreases. X-ray photoelectron spectroscopy (XPS) measurements show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions whose population increases as the film becomes thinner. The density of chemisorbed oxygen increases as the film thickness is reduced in agreement with the results obtained from the other measurements in this work. - Highlights: • Hematite thin films with different thickness were deposited by RF sputtering technique. • X-ray diffraction patterns confirm the formation of hematite phase in all samples. • Hysteresis curve at 300 K shows the presence of a weak-ferromagnetic phase. • XPS show the presence of Fe{sup 2+} ions coexisting with Fe{sup 3+} ions.

Test of the fast thin-film ferromagnetic shutters for ultracold neutrons

International Nuclear Information System (INIS)

Pokotilovskij, Yu.N.; Novopol'tsev, M.I.; Geltenbort, P.

2008-01-01

Test of thin-film ferromagnetic shutters of two types for ultracold neutrons has been performed. The first type is based on neutron reflection from the sequence of successively placed thin ferromagnetic layers with oppositely directed magnetization. The second one is based on neutron refraction in ferromagnetic foils inserted in the beam

Temperature dependent magnetic coupling between ferromagnetic FeTaC layers in multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Singh, Akhilesh Kumar [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India); Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Hsu, Jen-Hwa [Department of Physics, National Taiwan University, Taipei 10617, Taiwan (China); Perumal, Alagarsamy, E-mail: perumal@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

2016-11-15

We report systematic investigations on temperature dependent magnetic coupling between ferromagnetic FeTaC layers and resulting magnetic properties of multilayer structured [FeTaC (~67 nm)/Ta(x nm)]{sub 2}/FeTaC(~67 nm)] thin films, which are fabricated directly on thermally oxidized Si substrate. As-deposited amorphous films are post annealed at different annealing temperatures (T{sub A}=200, 300 and 400 °C). Structural analyzes reveal that the films annealed at T{sub A}≤200 °C exhibit amorphous nature, while the films annealed above 200 °C show nucleation of nanocrystals at T{sub A}=300 °C and well-defined α-Fe nanocrystals with size of about 9 nm in amorphous matrix for 400 °C annealed films. Room temperature and temperature dependent magnetic hysteresis (M–H) loops reveal that magnetization reversal behaviors and magnetic properties are strongly depending on spacer layer thickness (x), T{sub A} and temperature. A large reduction in coercivity (H{sub C}) was observed for the films annealed at 200 °C and correlated to relaxation of stress quenched in during the film deposition. On the other hand, the films annealed at 300 °C exhibit unusual variation of H{sub C}(T), i.e., a broad minimum in H{sub C}(T) vs T curve. This is caused by change in magnetic coupling between ferromagnetic layers having different microstructure. In addition, the broad minimum in the H{sub C}(T) curve shifts from 150 K for x=1 film to 80 K for x=4 film. High-temperature thermomagnetization data show a strong (significant) variation of Curie temperature (T{sub C}) with T{sub A} (x). The multilayer films annealed at 200 °C exhibit low value of T{sub C} with a minimum of 350 K for x=4 film. But, the films annealed at 400 °C show largest T{sub C} with a maximum of 869 K for x=1 film. The observed results are discussed on the basis of variations in magnetic couplings between FeTaC layers, which are majorly driven by temperature, spacer layer thickness, annealing temperature and

Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

KAUST Repository

Venkatesh, S.

2015-01-07

Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (ferromagnetic at room temperature. Negative magnetoresistance, electric transport properties showed that the ferromagnetic exchange is mediated by a spin-split defect band formed due to oxygen deficiency related defect complexes. Mott\\'s theory of variable range of hopping conduction confirms the formation of the impurity/defect band near the Fermi level.

Unusual metal-insulator transition in disordered ferromagnetic films

International Nuclear Information System (INIS)

Muttalib, K.A.; Wölfle, P.; Misra, R.; Hebard, A.F.

2012-01-01

We present a theoretical interpretation of recent data on the conductance near and farther away from the metal-insulator transition in thin ferromagnetic Gd films of thickness b≈2-10 nm. For increasing sheet resistances a dimensional crossover takes place from d=2 to d=3 dimensions, since the large phase relaxation rate caused by scattering of quasiparticles off spin wave excitations renders the dephasing length L φ ≲b at strong disorder. The conductivity data in the various regimes obey fractional power-law or logarithmic temperature dependence. One observes weak localization and interaction induced corrections at weaker disorder. At strong disorder, near the metal-insulator transition, the data show scaling and collapse onto two scaling curves for the metallic and insulating regimes. We interpret this unusual behavior as proof of two distinctly different correlation length exponents on both sides of the transition.

Control of room-temperature defect-mediated ferromagnetism in VO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Yang, Tsung-Han, E-mail: tyang3@ncsu.edu [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States); Nori, Sudhakar; Mal, Siddhartha; Narayan, Jagdish [NSF Center for Advanced Materials and Smart Structures, Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695-7907 (United States)

2011-09-15

We report interesting ferromagnetic properties and their control in a vanadium-based oxide system driven by stoichiometric defects. Vanadium oxide (VO{sub 2}) thin films were grown on c-plane sapphire substrates by a pulsed laser deposition technique under different ambient conditions. The ferromagnetism of the epitaxial VO{sub 2} films can be switched on and off by altering the cooling ambient parameters. In addition, the saturated magnetic moments and coercivity of the VO{sub 2} films were found to be a function of the oxygen partial pressure during the growth process. The room-temperature ferromagnetic properties of VO{sub 2} films were correlated with the nature of the microstructure and the growth parameters. The origin of the induced magnetic properties are qualitatively understood to stem from intrinsic structural and stoichiometric defects.

Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

Energy Technology Data Exchange (ETDEWEB)

Sharma, Mamta [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India); Mehra, R.M. [Department of Electronic Science, University of Delhi South Campus, New Delhi 110021 (India)], E-mail: rammehra2003@yahoo.com

2008-12-30

This paper reports deposition and characterization of Zn{sub 0.94}Co{sub 0.05}Al{sub 0.01}O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

Effect of thickness on structural, electrical, optical and magnetic properties of Co and Al doped ZnO films deposited by sol-gel route

International Nuclear Information System (INIS)

Sharma, Mamta; Mehra, R.M.

2008-01-01

This paper reports deposition and characterization of Zn 0.94 Co 0.05 Al 0.01 O films of thickness ranging from 70 nm to 400 nm. These films were deposited on a glass (Corning, 7059) substrate using sol-gel route. The films have been characterized to study their structural, electrical, optical and magnetic properties. X-ray diffraction (XRD) and atomic force microscopy (AFM) were used to study the crystallinity and growth mode of the films. The films deposited up to a thickness of 200 nm showed improvement in crystallinity and preferential c-axis orientation. A transition in the growth mode from vertical (c-axis) to lateral (a and b-axis) was observed with further increase in the thickness of the film. The average transmittance of the films for thickness less than 200 nm was above 80% in the visible region which decreased at higher thickness of the film. The resistivity of the film was found to decrease with increase in thickness up to 200 nm. Ferromagnetism, at room temperature, was confirmed for 200 nm and 400 nm thick films.

Ferromagnetic film on a superconducting substrate

International Nuclear Information System (INIS)

Bulaevskii, L. N.; Chudnovsky, E. M.

2001-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M 0 on a superconducting (SC) substrate. At 4πM 0 c1 the SC is in the Meissner state and the equilibrium domain width in the film, l, scales as (l/4πλ L )=(l N /4πλ L ) 2/3 with the domain width on a normal (nonsuperconducting) substrate, l N /4πλ L >>1; λ L being the London penetration length

Anion vacancy-mediated ferromagnetism in atomic-thick Ni3N nanosheets

Science.gov (United States)

Xia, Baorui; Wang, Tongtong; Chi, Xiao; Yu, Xiaojiang; Liu, Peitao; Zhang, Jingyan; Xi, Shibo; Du, Yonghua; Gao, Daqiang

2017-12-01

Realizing spin and electronic behavior of two-dimensional ultrathin nanosheets is significant to construct next generation nanoelectronics. Here, atomic-thick Ni3N nanosheets with clear room temperature ferromagnetism and high saturation magnetization (1.2 emu/g) are reported. X-ray magnetic circular dichroism and first-principles calculation results give the evidence that the observed intrinsic ferromagnetism in Ni3N nanosheets originates from the surface N-deficiency, where alignments of localized large magnetic moments of Ni in the vicinity of the N defect can be aligned parallel to activate macroscopic ferromagnetism. These ultrathin Ni3N nanosheets show great potential application in next-generation electron devices.

Coupling of microwave magnetic dynamics in thin ferromagnetic films to stripline transducers in the geometry of the broadband stripline ferromagnetic resonance

Energy Technology Data Exchange (ETDEWEB)

Kostylev, M., E-mail: mikhail.kostylev@uwa.edu.au [School of Physics, The University of Western Australia, Crawley 6009 (Australia)

2016-01-07

We constructed a quasi-analytical self-consistent model of the stripline-based broadband ferromagnetic resonance (FMR) measurements of ferromagnetic films. Exchange-free description of magnetization dynamics in the films allowed us to obtain simple analytical expressions. They enable quick and efficient numerical simulations of the dynamics. With this model, we studied the contribution of radiation losses to the ferromagnetic resonance linewidth, as measured with the stripline FMR. We found that for films with large conductivity of metals the radiation losses are significantly smaller than for magneto-insulating films. Excitation of microwave eddy currents in these materials contributes to the total microwave impedance of the system. This leads to impedance mismatch with the film environment resulting in decoupling of the film from the environment and, ultimately, to smaller radiation losses. We also show that the radiation losses drop with an increase in the stripline width and when the sample is lifted up from the stripline surface. Hence, in order to eliminate this measurement artefact, one needs to use wide striplines and introduce a spacer between the film and the sample surface. The radiation losses contribution is larger for thicker films.

Ferromagnetic film on a superconducting substrate

Energy Technology Data Exchange (ETDEWEB)

Bulaevskii, L. N.; Chudnovsky, E. M.

2001-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic film with perpendicular magnetization M{sub 0} on a superconducting (SC) substrate. At 4{pi}M{sub 0}film, l, scales as (l/4{pi}{lambda}{sub L})=(l{sub N}/4{pi}{lambda}{sub L}){sup 2/3} with the domain width on a normal (nonsuperconducting) substrate, l{sub N}/4{pi}{lambda}{sub L}>>1; {lambda}{sub L} being the London penetration length.

Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

Directory of Open Access Journals (Sweden)

Kajal Jindal

2015-02-01

Full Text Available Transition from room temperature diamagnetic to ferromagnetic state in N doped ZnO (ZnO:N films grown by pulsed laser deposition with tunable energy density has been identified. ZnO:N films deposited with moderate laser energy density of 2.5 J/cm2 are single phase and nearly defect free having N dopant substitution at O sites in ZnO lattice, exhibiting intrinsic ferromagnetism. When energy density reduces (<2.5 J/cm2, defects in ZnO:N film degrades ferromagnetism and exhibit diamagnetic phase when grown at energy density of 1.0 J/cm2. Growth kinetics, which in turn depends on laser energy density is playing important role in making transition from ferromagnetic to diamagnetic in ZnO:N films.

Skyrmion burst and multiple quantum walk in thin ferromagnetic films

International Nuclear Information System (INIS)

Ezawa, Motohiko

2011-01-01

We propose a new type of quantum walk in thin ferromagnetic films. A giant Skyrmion collapses to a singular point in a thin ferromagnetic film, emitting spin waves, when external magnetic field is increased beyond the critical one. After the collapse the remnant is a quantum walker carrying spin S. We determine its time evolution and show the diffusion process is a continuous-time quantum walk. We also analyze an interference of two quantum walkers after two Skyrmion bursts. The system presents a new type of quantum walk for S>1/2, where a quantum walker breaks into 2S quantum walkers. -- Highlights: → A giant Skyrmion collapses to a singular point by applying strong magnetic field. → Quantum walk is realized in thin ferromagnetic films by Skyrmion collapsing. → Quantum walks for S=1/2 and 1 are exact solvable, where S represents the spin. → Quantum walks for >1/2 presents a new type of quantum walks, i.e., 'multiple quantum walks'. → Skyrmion bursts which occur simultaneously exhibit an interference as a manifestation of quantum walk.

Comment on ``Ferromagnetic film on a superconducting substrate''

Science.gov (United States)

Sonin, E. B.

2002-10-01

A superconducting substrate is not able to shrink drastically domains in a ferromagnetic film, contrary to the prediction of Bulaevskii and Chudnovsky. This is shown on the basis of the exact solution for the stripe domain structure.

Use of buffy coat thick films in detecting malaria parasites in patients with negative conventional thick films.

Science.gov (United States)

Duangdee, Chatnapa; Tangpukdee, Noppadon; Krudsood, Srivicha; Wilairatana, Polrat

2012-04-01

To determine the frequency of malaria parasite detection from the buffy coat blood films by using capillary tube in falciparum malaria patients with negative conventional thick films. Thirty six uncomplicated falciparum malaria patients confirmed by conventional thick and thin films were included in the study. The patients were treated with artemisinin combination therapy at Hospital for Tropical Diseases, Bangkok, Thailand for 28 day. Fingerpricks for conventional blood films were conducted every 6 hours until negative parasitemia, then daily fingerpricks for parasite checks were conducted until the patients were discharged from hospital. Blood samples were also concurrently collected in 3 heparinized capillary tubes at the same time of fingerpricks for conventional blood films when the prior parasitemia was negative on thin films and parasitemia was lower than 50 parasites/200 white blood cells by thick film. The first negative conventional thick films were compared with buffy coat thick films for parasite identification. Out of 36 patients with thick films showing negative for asexual forms of parasites, buffy coat films could detect remaining 10 patients (27.8%) with asexual forms of Plasmodium falciparum. The study shows that buffy coat thick films are useful and can detect malarial parasites in 27.8% of patients whose conventional thick films show negative parasitemia.

Voltage control of a magnetization easy axis in piezoelectric/ferromagnetic hybrid films

International Nuclear Information System (INIS)

Kim, Sang-Koog; Lee, Jeong-Won; Shin, Sung-Chul; Song, Han Wook; Lee, Chang Ho; No, Kwangsoo

2003-01-01

We have established a spontaneous magnetization-axis switching in ferromagnetic films by applying a low voltage to a piezoelectric layer in a newly developed hybrid system comprised of the ferromagnetic and piezoelectric films. The magnetization easy axis along which a spontaneous magnetization is oriented, is readily switchable by a voltage without applying an external magnetic field through both the inverse magnetostrictive and piezoelectric effects of CoPd and lead-zirconate-titanate alloy films, respectively. This challenging work provides a new way into the memory writing as well as storage means of ultrahigh bit densities in nonvolatile magnetic random access memory

Magnetic anisotropy of MnAs-films on GaAs(0 0 1) studied with ferromagnetic resonance

International Nuclear Information System (INIS)

Lindner, J.; Tolinski, T.; Lenz, K.; Kosubek, E.; Wende, H.; Baberschke, K.; Ney, A.; Hesjedal, T.; Pampuch, C.; Koch, R.; Daeweritz, L.; Ploog, K.H.

2004-01-01

Thin films of MnAs grown on GaAs(0 0 1) show a self-organized structure of coexisting ferromagnetic α- and paramagnetic β-MnAs stripes in the temperature interval from 10 to 40 deg. C. We quantify the magnetic anisotropies of the α-stripes via ferromagnetic resonance and superconducting quantum interference device magnetometry for samples with thicknesses of 57 and 165 nm. The easy axis of magnetization is found to be located perpendicular to the stripe direction, whereas the direction parallel to the stripes is a hard one. While the intrinsic anisotropies show a bulk-like behavior and explain the direction of the hard axis, the key to understanding the direction of the easy axis is given by the demagnetizing fields due to the stripe formation

Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays

Energy Technology Data Exchange (ETDEWEB)

Gong, W. J.; Liu, W., E-mail: wliu@imr.ac.cn; Feng, J. N.; Zhang, Z. D. [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China); Kim, D. S.; Choi, C. J. [Functional Materials Division, Korea Institute of Materials Science, 531 Changwon- daero, Changwon 631-831 (Korea, Republic of)

2014-04-07

The effect of antiferromagnetic (AFM) layer on exchange bias (EB), training effect, and magnetotransport properties in ferromagnetic (FM) /AFM nanoscale antidot arrays and sheet films Ag(10 nm)/Co(8 nm)/NiO(t{sub NiO})/Ag(5 nm) at 10 K is studied. The AFM layer thickness dependence of the EB field shows a peak at t{sub NiO} = 2 nm that is explained by using the random field model. The misalignment of magnetic moments in the three-dimensional antidot arrays causes smaller decrease of EB field compared with that in the sheet films for training effect. The anomalous magnetotransport properties, in particular positive magnetoresistance (MR) for antidot arrays but negative MR for sheet films are found. The training effect and magnetotransport properties are strongly affected by the three-dimensional spin-alignment effects in the antidot arrays.

Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films

International Nuclear Information System (INIS)

Fontcuberta, J.; Bibes, M.; Martinez, B.; Trtik, V.; Ferrater, C.; Sanchez, F.; Varela, M.

2000-01-01

Epitaxial La 2/3 Sr 1/3 MnO 3 and SrRuO 3 thin films have been grown by laser ablation on single-crystalline SrTiO 3 substrates. Prior to manganite or ruthenate deposition tracks have been patterned on the SrTiO 3 substrate by using an appropriately focused laser beam. In the experiments here reported linear tracks have been formed. The magnetotransport properties of the films, particularly the magnetoresistance, along paths parallel and perpendicular to the track have been extensively investigated and compared to similar data recorded on films grown on bicrystalline STO substrates. Whereas in LSMO a significant low-field tunnel magnetoresistance develops across the artificial interface, in SRO this tunnel contribution is absent. However, a significant high-field magnetoresistance is observed for both metallic and ferromagnetic systems. The results are analysed and discussed within the framework of the current understanding of double exchange and itinerant ferromagnets. Magnetoresistance data for various configurations of the track array are presented

Zinc Vacancy-Induced Room-Temperature Ferromagnetism in Undoped ZnO Thin Films

Directory of Open Access Journals (Sweden)

Hongtao Ren

2012-01-01

Full Text Available Undoped ZnO thin films are prepared by polymer-assisted deposition (PAD and treated by postannealing at different temperatures in oxygen or forming gases (95%  Ar+5% H2. All the samples exhibit ferromagnetism at room temperature (RT. SQUID and positron annihilation measurements show that post-annealing treatments greatly enhance the magnetizations in undoped ZnO samples, and there is a positive correlation between the magnetization and zinc vacancies in the ZnO thin films. XPS measurements indicate that annealing also induces oxygen vacancies that have no direct relationship with ferromagnetism. Further analysis of the results suggests that the ferromagnetism in undoped ZnO is induced by Zn vacancies.

The generalized spherical model of ferromagnetic films

International Nuclear Information System (INIS)

Costache, G.

1977-12-01

The D→ infinity of the D-vectorial model of a ferromagnetic film with free surfaces is exactly solved. The mathematical mechanism responsible for the onset of a phase transition in the system is a generalized sticking phenomenon. It is shown that the temperature at which the sticking appears, the transition temperature of the model is monotonously increasing with increasing the number of layers of the film, contrary to what happens in the spherical model with overall constraint. Certain correlation inequalities of Griffiths type are shown to hold. (author)

Polarized Neutron Reflectivity Simulation of Ferromagnet/ Antiferromagnet Thin Films

Energy Technology Data Exchange (ETDEWEB)

Kim, Ki Yeon; Lee, Jeong Soo

2008-02-15

This report investigates the current simulating and fitting programs capable of calculating the polarized neutron reflectivity of the exchange-biased ferromagnet/antiferromagnet magnetic thin films. The adequate programs are selected depending on whether nonspin flip and spin flip reflectivities of magnetic thin films and good user interface are available or not. The exchange-biased systems such as Fe/Cr, Co/CoO, CoFe/IrMn/Py thin films have been simulated successfully with selected programs.

Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine

International Nuclear Information System (INIS)

Jayalakshmi, G.; Gopalakrishnan, N.; Balasubramanian, T.

2013-01-01

Highlights: ► Room temperature ferromagnetism (RTFM) is observed in surface functionalized ZnO films. ► Surface functionalization is a new approach to make ZnO as ferromagnetic. ► The RTFM is attributed to the interaction between the adsorbates and the surface of ZnO. ► The oxygen vacancies are passivated upon surface functionalization. - Abstract: In this paper, we report the activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine. The pure and surface functionalized ZnO films have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM) measurements. XRD measurements show that all the films have single phase and (0 0 2) preferred orientation. The chemical bonding of ZnO with thiol and amine molecules has been confirmed by XPS measurements. The quenching of visible emission in PL spectra indicates that the surface defects are passivated by functionalization with thiol and amine. Surface functionalization of ZnO films with thiol and amine induces robust room temperature ferromagnetism in ZnO films as evidenced from VSM measurements. It is concluded that the observed ferromagnetic behavior in functionalized ZnO films is attributed to the different electronegativity of the atom in the thiol (or amine) and the surface of ZnO.

Significant room-temperature ferromagnetism in porous ZnO films: The role of oxygen vacancies

Energy Technology Data Exchange (ETDEWEB)

Hou, Xue; Liu, Huiyuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Sun, Huiyuan, E-mail: huiyuansun@126.com [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China); Liu, Lihu; Jia, Xiaoxuan [College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China); Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024 (China)

2015-10-15

Graphical abstract: - Highlights: • Porous ZnO films were deposited on porous anodic alumina substrates. • Significant ferromagnetism (FM) has been observed in porous ZnO films (110 emu/cm{sup 3}). • The strong magnetic anisotropy was observed in the porous ZnO films. • The origin of FM is attributed to the oxygen vacancy with a local magnetic moment. - Abstract: Pure porous ZnO films were prepared by direct current reactive magnetron sputtering on porous anodic alumina substrates. Remarkably large room-temperature ferromagnetism was observed in the films. The highest saturation moment along the out-of-plane direction was about 110 emu/cm{sup 3}. Experimental and theoretical results suggested that the oxygen vacancies and the unique porous structure of the films are responsible for the large ferromagnetism. There are two modes of coupling between oxygen vacancies in the porous ZnO films: (i) exchange interactions directly between the oxygen vacancies and (ii) with the mediation of conduction electrons. In addition, it was found that the magnetic moment of ZnO films can be changed by tuning the concentration of oxygen vacancies. These observations may be useful in the development of ZnO-based spintronics devices.

Magnetoelastic coupling in multilayered ferroelectric/ferromagnetic thin films: A quantitative evaluation

Energy Technology Data Exchange (ETDEWEB)

Chiolerio, A., E-mail: alessandro.chiolerio@iit.it [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Quaglio, M. [Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Lamberti, A. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy); Center for Space Human Robotics, Istituto Italiano di Tecnologia, Corso Trento 21, IT-10129 Turin (Italy); Celegato, F. [Electromagnetism Division, INRIM, Strada delle Cacce 91, IT-10135 Turin (Italy); Balma, D.; Allia, P. [Applied Science and Technology Department, Politecnico di Torino, Corso Duca degli Abruzzi 24, IT-10129 Turin (Italy)

2012-08-01

The electrical control of magnetization in a thin film, achieved by means of magnetoelastic coupling between a ferroelectric and a ferromagnetic layer represents an attractive way to implement magnetic information storage and processing within logical architectures known as Magnetic Quantum Cellular Automata (MQCA). Such systems have been addressed as multiferroics. We exploited cost-effective techniques to realize multi-layered multiferroic systems, such as sol-gel deposition and RF sputtering, introducing a specific technique to control the crystal structure and film roughness effect on the magnetic domain wall motion and reconfiguration, induced by magnetoelastic coupling, by evaluating the 2-dimensional statistical properties of enhanced MFM matrices. A RF sputtered 50-nm-thick Co layer on a Si/SiO{sub 2}/Si{sub 3}N{sub 4}/Ti/Pt/PbTiO{sub 3}/Pb(Zr{sub 0.53}Ti{sub 0.47})O{sub 3} substrate was realized, exploiting two differently engineered PZT nano-crystalline structures and the conditions leading to a favorable compromise in order to realize functional devices were elucidated.

Ionized zinc vacancy mediated ferromagnetism in copper doped ZnO thin films

Directory of Open Access Journals (Sweden)

Shi-Yi Zhuo

2012-03-01

Full Text Available This paper reports the origin of ferromagnetism in Cu-doped ZnO thin films. Room-temperature ferromagnetism is obtained in all the thin films when deposited at different oxygen partial pressure. An obviously enhanced peak corresponding to zinc vacancy is observed in the photoluminescence spectra, while the electrical spin resonance measurement implies the zinc vacancy is negative charged. After excluding the possibility of direct exchange mechanisms (via free carriers, we tentatively propose a quasi-indirect exchange model (via ionized zinc vacancy for Cu-doped ZnO system.

Thick film hydrogen sensor

Science.gov (United States)

Hoffheins, Barbara S.; Lauf, Robert J.

1995-01-01

A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Science.gov (United States)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed.

Simple electrodepositing of CoFe/Cu multilayers: Effect of ferromagnetic layer thicknesses

Energy Technology Data Exchange (ETDEWEB)

Tekgül, Atakan, E-mail: atakantekgul@gmail.com [Akdeniz University, Physics Department, Science Faculty, TR-07058 Antalya (Turkey); Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Alper, Mürsel [Uludag University, Physics Department, Science and Literature Faculty, TR-16059 Bursa (Turkey); Kockar, Hakan [Balikesir University, Physics Department, Science and Literature Faculty, TR-10145 Balikesir (Turkey)

2017-01-01

The CoFe/Cu magnetic multilayers were produced by changing CoFe ferromagnetic layers from 3 nm to 10 nm using electrodeposition. By now, the thinnest Cu (0.5 nm) layer thicknesses were used to see whether the GMR effect in the multilayers can be obtained or not since the pinning of non-magnetic layer between the ferromagnetic layers is required. For the proper depositions, the cyclic voltammograms was used, and the current–time transients were obtained. The Cu and CoFe layers were deposited at a cathode potential of −0.3 and −1.5 V with respect to saturated calomel electrode, respectively. From the XRD patterns, the multilayers were shown to be fcc crystal structures. For the magnetization measurements, saturation magnetization increases from 160 to 600 kA/m from 3 to 8 nm ferromagnetic layer thicknesses. And, the coercivity values increase until the 8 nm of the CoFe layer thickness. It is seen that the thin Cu layer (fixed at 0.5 nm) and pinholes support the random magnetization orientation and thus all multilayers exhibited the giant magnetoresistance (GMR) effect, and the highest GMR value was observed about 5.5%. And, the variation of GMR field sensitivity was calculated. The results show that the GMR and GMR sensitivity are compatible among the multilayers. The CoFe/Cu magnetic multilayers having GMR properties are used in GMR sensors and hard disk drive of the nano-technological devices. - Highlights: • The much thinner (0.5 nm) Cu layer was used to obtain the GMR effect on the electrodeposited CoFe/Cu multilayers. • All samples exhibited GMR and the maximum GMR value was 5.5%. • The M{sub s} and the H{sub c} changed with increasing magnetic layer thickness.

doped ZnO thick film resistors

Indian Academy of Sciences (India)

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

Ferromagnetic Film on a Superconducting Substrate

OpenAIRE

Bulaevskii, L. N.; Chudnovsky, E. M.

2000-01-01

We study the equilibrium domain structure and magnetic flux around a ferromagnetic (FM) film with perpendicular magnetization M_0 on a superconducting (SC) substrate. At 4{\\pi}M_0> 1. Here \\lambda_L is the London penetration length. For 4{\\pi}M_0 > H_{c1} and l_{N} in excess of about 35 {\\lambda}_{L}, the domains are connected by SC vortices. We argue that pinning of vortices by magnetic domains in FM/SC multilayers can provide high critical currents.

High quality Y-type hexaferrite thick films for microwave applications by an economical and environmentally benign crystal growth technique

Energy Technology Data Exchange (ETDEWEB)

Hu, Bolin; Chen, Yajie, E-mail: y.chen@neu.edu; Gillette, Scott; Su, Zhijuan; Harris, Vincent G. [Center for Microwave Magnetic Materials and Integrated Circuits and Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115 (United States); Wolf, Jason; McHenry, Michael E. [Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)

2014-02-17

Thick barium hexaferrite Ba{sub 2}Zn{sub 2}Fe{sub 12}O{sub 22} (i.e., Zn{sub 2}Y) films having thicknesses of ∼100 μm were epitaxially grown on MgO (111) substrates using an environmentally benign ferrite-salt mixture by vaporizing the salt. X-ray diffraction pole figure analyses showed (00l) crystallographic alignment with little in plane dispersion confirming epitaxial growth. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 2.51 ± 0.1 kG with an out of plane magnetic anisotropy field H{sub A} of 8.9 ± 0.1 kOe. Ferromagnetic resonance linewidth, as the peak-to-peak power absorption derivative at 9.6 GHz, was measured to be 62 Oe. These properties demonstrate a rapid, convenient, cost-effective, and nontoxic method of growing high quality thick crystalline ferrite films which could be used widely for microwave device applications.

Adherence problem for carbon films of up to 0.5 mg/cm2 on vacuum-deposited thick ferromagnetic Gd targets

International Nuclear Information System (INIS)

Maier-Komor, P.; Kruecken, R.; Speidel, K.-H.; Kenn, O.

2004-01-01

For high precision measurements of magnetic moments and reduced transition probabilities by the combined technique of projectile Coulomb excitation in inverse kinematics and transient magnetic fields sandwich targets of carbon and gadolinium were required. First preparations revealed a lack of adhesion between the Gd film and the vacuum-deposited C layer. Either the adhesion was generally poor or good results could not be reproduced. Now on a 4 mg/cm 2 Gd target 0.5 mg/cm 2 of nat C should be deposited. The Gd was deposited on 1-1.6 mg/cm 2 Ta backings and Cu films of 3.5-7 mg/cm 2 were deposited on the reverse side of the Ta backings. The adhesive properties of evaporated carbon on ferromagnetic gadolinium were investigated. For this either substrate cooling or the deposition of a 5 μg/cm 2 Ti film as adhesion agent were applied

Origin of room temperature ferromagnetism in SnO{sub 2} films

Energy Technology Data Exchange (ETDEWEB)

Li, Jing [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); College of Materials Science and Engineering, China Jiliang University, Hangzhou 310018 (China); National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Bai, Guohua; Jiang, Yinzhu [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Du, Youwei [National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Chen, E-mail: chen_wu@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China); Yan, Mi, E-mail: mse_yanmi@zju.edu.cn [School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027 (China)

2017-03-15

SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. The saturation magnetization (M{sub s}) of the films experiences a decreasing trend followed by increasing with the growth temperature increased from RT to 400 ℃. The growth temperature affects both the concentration and the location of the oxygen vacancies as the origin of the RTFM. With lower growth temperatures (<300 ℃), more oxygen vacancies exist in the inner film for the samples with less crystallinity, resulting in enhanced magnetism. Higher deposition temperature leads to less oxygen vacancies in the inner film but more oxygen defects at the film surface, which is also beneficial to achieve greater magnetism. Various oxygen pressures during growth and post-annealing have also been used to confirm the role of oxygen vacancies. The study demonstrates that the surface oxygen defects and the positively charged monovalent O vacancies (V{sub O}{sup +}) in the inner film are the origin of the magnetism in SnO{sub 2} films. - Highlights: • SnO{sub 2} films exhibiting room temperature ferromagnetism (RTFM) have been prepared on Si (001) by pulsed laser deposition. • Growth temperature, oxygen pressure and annealing affect the growth of SnO{sub 2} films. • Both the concentration and location of the oxygen vacancies play critical roles in the magnetization.

Fabrication and properties of multiferroic nanocomposite films

KAUST Repository

Al-Nassar, Mohammed Y.; Ivanov, Yurii P.; Kosel, Jü rgen

2015-01-01

A new type of multiferroic polymer nanocomposite is presented, which exhibits excellent ferromagnetism and ferroelectricity simultaneously at room temperature. The multiferroic nanocomposite consists of a ferroelectric copolymer poly(vinylindene fluoride-trifluoroethylene) [P(VDF-TrFE)] and high aspect ratio ferromagnetic nickel (Ni) nanowires (NWs), which were grown inside anodic aluminum oxide membranes. The fabrication of nanocomposite films with Ni NWs embedded in P(VDF-TrFE) has been successfully carried out via a simple low-temperature spin-coating technique. Structural, ferromagnetic, and ferroelectric properties of the developed nanocomposite have been investigated. The remanent and saturation polarization as well as the coercive field of the ferroelectric phase are slightly affected by the incorporation of the NWs as well as the thickness of the films. While the former two decrease, the last increases by adding the NWs or increasing the thickness. The ferromagnetic properties of the nanocomposite films are found to be isotropic.

Room temperature ferromagnetism in (In{sub 1-x}Ni{sub x}){sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Sai Krishna, N. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Kaleemulla, S., E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, Tamilnadu (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu 603104,Tamilnadu (India); Madhusudhana Rao, N.; Krishnamoorthi, C.; Rigana Begam, M. [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore 632014, Tamilnadu (India); Omkaram, I. [Department of Electronics and Radio Engineering, Kyung Hee University, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Sreekantha Reddy, D. [Department of Physics and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2015-06-15

Polycrystalline (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films (x=0.00, 0.03, 0.05 and 0.07) were deposited on glass substrates by electron beam evaporation technique. The effect of Ni concentration on composition, structural and magnetic properties of (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films was studied. Increment in the Ni concentration does increase the oxygen vacancies and ferromagnetic strength in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} thin films. X-ray photoelectron spectroscopy (XPS) studies indicate the dopant Ni exists in Ni (II) state in In{sub 2}O{sub 3} host. Ferromagnetism was attributed to intrinsic nature of the sample rather than any secondary magnetic phases exist in the films. The observed ferromagnetism in (In{sub 1−x}Ni{sub x}){sub 2}O{sub 3} was attributed to ferromagnetic exchange interaction between Ni{sup 2+} ions via single free electron trapped in oxygen vacancy. Increase in oxygen vacancies with Ni concentration lead to increase in such an oxygen vacancy mediated ferromagnetic pairs resulting in increase in ferromagnetic strength with Ni concentration.

Fe-Vacancy-Induced Ferromagnetism in Tetragonal FeSe Thin Films

International Nuclear Information System (INIS)

Yong-Feng, Li; Gui-Bin, Liu; Li-Jie, Shi; Bang-Gui, Liu

2009-01-01

Motivated by recent experiments, we investigate structural, electronic, and magnetic properties of tetragonal FeSe with Fe vacancies using the state-of-the-art first-principles method. We show that Fe vacancies tend to stay in the same one of the two sublattices and thus induce ferromagnetism in the ground-state phase. Our calculated net moment is in good agreement with the experimental data available. Therefore, the ferromagnetism observed in tetragonal FeSe thin films is explained. It could be made controllable soon for spintronic applications

High Power Laser Beam Welding of Thick-walled Ferromagnetic Steels with Electromagnetic Weld Pool Support

Science.gov (United States)

Fritzsche, André; Avilov, Vjaceslav; Gumenyuk, Andrey; Hilgenberg, Kai; Rethmeier, Michael

The development of modern high power laser systems allows single pass welding of thick-walled components with minimal distortion. Besides the high demands on the joint preparation, the hydrostatic pressure in the melt pool increases with higher plate thicknesses. Reaching or exceeding the Laplace pressure, drop-out or melt sagging are caused. A contactless electromagnetic weld support system was used for laser beam welding of thick ferromagnetic steel plates compensating these effects. An oscillating magnetic field induces eddy currents in the weld pool which generate Lorentz forces counteracting the gravity forces. Hysteresis effects of ferromagnetic steels are considered as well as the loss of magnetization in zones exceeding the Curie temperature. These phenomena reduce the effective Lorentz forces within the weld pool. The successful compensation of the hydrostatic pressure was demonstrated on up to 20 mm thick plates of duplex and mild steel by a variation of the electromagnetic power level and the oscillation frequency.

Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

2015-10-28

We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

Field noise near ferromagnetic films

Science.gov (United States)

McMichael, Robert; Liu, Hau-Jian; Yoon, Seungha

Thermally driven magnetization fluctuations can be viewed as a nuisance noise source or as interesting physics. For example, mag noise in a field sensor may set the minimum detectable field of that sensor. On the other hand, the field noise spectrum reflects the dynamics of the magnetic components, which are essential for device operation. Here, we model the field noise spectrum near the surface of a magnetic film due to thermal spin waves, and we calculate its effect on the T1 relaxation rate of a nearby nitrogen-vacancy (NV) center spin. The model incorporates four components: the spin wave dispersion of the magnetization in a finite-thickness film, thermal excitation of spin waves, the coupling geometry between waves in the film and an external point dipole and finally, the relaxation dynamics of the NV spin. At a distance of 100 nm above a 50 nm thick permalloy film, we find that the strongest stray fields are along the film normal and parallel to the magnetization, on the order of 1 mA m-1 Hz- 1 / 2 or 1 nT Hz- 1 / 2, yielding relaxation times on the order of 10 μs. The spin wave field noise can dominate the intrinsic relaxation, (T1 1 ms) of the NV center spin.

Growth of Ferromagnetic Epitaxial Film of Hexagonal FeGe on (111) Ge Surface

Science.gov (United States)

Kumar, Dushyant; Joshi, P. C.; Hossain, Z.; Budhani, R. C.

2014-03-01

The realization of semiconductors showing ferromagnetic order at easily accessible temperatures has been of interest due to their potential use in spintronic devices where long spin life times are of key interest. We have realized the growth of FeGe thin films on Ge (111) wafers using pulsed laser deposition (PLD). The stoichiometric and single phase FeGe target used in PLD chamber has been made by arc melting. A typical θ-2 θ diffraction spectra performed on 40 nm thick FeGe film suggests the stabilization of β-Ni2In (B82-type) hexagonal phase with an epitaxial orientation of (0001)FeGe ||(111)Ge and [11-20]FeGe ||[-110]Ge. SEM images shows a granular structure with the formation of very large grains of about 100 to 500 nm in lateral dimension. The magnetization vs. temperature data taken from SQUID reveal the TC of ~ 270K. Since, PLD technique makes it easier to stabilize the B82 (Ni2In) hexagonal phase in thin FeGe films, this work opens opportunities to reinvestigate many conflicting results on various properties of the FeGe system.

Peltier cooling and onsager reciprocity in ferromagnetic thin films.

Science.gov (United States)

Avery, A D; Zink, B L

2013-09-20

We present direct measurements of the Peltier effect as a function of temperature from 77 to 325 K in Ni, Ni(80)Fe(20), and Fe thin films made using a suspended Si-N membrane structure. Measurement of the Seebeck effect in the same films allows us to directly test predictions of Onsager reciprocity between the Peltier and Seebeck effects. The Peltier coefficient Π is negative for both Ni and Ni(80)Fe(20) films and positive for the Fe film. The Fe film also exhibits a peak associated with the magnon drag Peltier effect. The observation of magnon drag in the Fe film verifies that the coupling between the phonon, magnon, and electron systems in the film is the same whether driven by heat current or charge current. The excellent agreement between Π values predicted using the experimentally determined Seebeck coefficient for these films and measured values offers direct experimental confirmation of the Onsager reciprocity between these thermoelectric effects in ferromagnetic thin films near room temperature.

Thickness evaluation using a new relationship between film density and penetrated thickness in radiography

International Nuclear Information System (INIS)

Lee, Sung Sik; Kim, Young H.

2005-01-01

In order to improve the accuracies in the thickness evaluation using radiography, a new relationship between film density and penetrated thickness has been proposed, and experimental verification of the proposed relationship was carried out by using the X- and γ-ray radiographs of two carbon steel step wedges. A new parameter, the logarithmic gradient of film density, was defined in order to express the characteristics of the radiographic film for wider range of film density. A new relationship between the film density and the penetrated thickness were formulated using the logarithmic gradient of the film density. In experiment, the logarithmic gradient of the film density was independent on both the exposure and the film density and measured for the radiographic film used in the present work from the slope of the fitting lines for the same penetrated thickness. Experimental results verifies the accuracy of the proposed relationship between film density and the penetrated thickness for the range of film density from 1.0 to 3.5. The thickness can be more accurately determined by using the proposed relationship and the parameters determined by experiment. It is also found that the γ-ray having simple energy spectrum is more appropriate radiation source for the evaluation of the thickness from the film density of the radiograph

Large exchange bias induced by polycrystalline Mn3Ga antiferromagnetic films with controlled layer thickness

Science.gov (United States)

Wu, Haokaifeng; Sudoh, Iori; Xu, Ruihan; Si, Wenshuo; Vaz, C. A. F.; Kim, Jun-young; Vallejo-Fernandez, Gonzalo; Hirohata, Atsufumi

2018-05-01

Polycrystalline Mn3Ga layers with thickness in the range from 6–20 nm were deposited at room temperature by a high target utilisation sputtering. To investigate the onset of exchange-bias, a ferromagnetic Co0.6Fe0.4 layer (3.3–9 nm thick) capped with 5 nm Ta, were subsequently deposited. X-ray diffraction measurements confirm the presence of Mn3Ga (0 0 0 2) and (0 0 0 4) peaks characteristic of the D019 antiferromagnetic structure. The 6 nm thick Mn3Ga film shows the largest exchange bias of 430 Oe at 120 K with a blocking temperature of 225 K. The blocking temperature is found to decrease with increasing Mn3Ga thickness. These results in combination with x-ray reflectivity measurements confirm that the quality of the Mn3Ga/Co0.6Fe0.4 interface controls the exchange bias, with the sharp interface with the 6-nm-thick Mn3Ga inducing the largest exchange bias. The magneto-crystalline anisotropy for 6 nm thick Mn3Ga thin film sample is calculated to be . Such a binary antiferromagnetic Heusler alloy is compatible with the current memory fabrication process and hence has a great potential for antiferromagnetic spintronics.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

Energy Technology Data Exchange (ETDEWEB)

Pasanai, K., E-mail: krisakronmsu@gmail.com

2017-01-15

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Conductance spectra of asymmetric ferromagnet/ferromagnet/ferromagnet junctions

International Nuclear Information System (INIS)

Pasanai, K.

2017-01-01

A theory of tunneling spectroscopy of ferromagnet/ferromagnet/ferromagnet junctions was studied. We applied a delta-functional approximation for the interface scattering properties under a one-dimensional system of a free electron approach. The reflection and transmission probabilities were calculated in the ballistic regime, and the conductance spectra were then calculated using the Landauer formulation. The magnetization directions were set to be either parallel (P) or anti-parallel (AP) alignments, for comparison. We found that the conductance spectra was suppressed when increasing the interfacial scattering at the interfaces. Moreover, the electron could exhibit direct transmission when the thickness was rather thin. Thus, there was no oscillation in this case. However, in the case of a thick layer the conductance spectra oscillated, and this oscillation was most prominent when the middle layer thickness increased. In the case of direct transmission, the conductance spectra of P and AP systems were definitely suppressed with increased exchange energy of the middle ferromagnet. This also refers to an increase in the magnetoresistance of the junction. In the case of oscillatory behavior, the positions of the resonance peaks were changed as the exchange energy was changed. - Highlights: • The conductance spectra of a FM/FM/FM junction were calculated. • The conductance spectra were suppressed by the exchange energy. • The exchange energy and the potential strength play similar roles in the junctions.

Thick-film analysis: literature search and bibliography

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

A literature search was conducted to support development of in-house diagnostic testing of thick film materials for hybrid microcircuits. A background literature review covered thick film formulation, processing, structure, and performance. Important material properties and tests were identified and several test procedures were obtained. Several tests were selected for thick film diagnosis at Bendix Kansas City. 126 references

Ferromagnetic resonance features of degenerate GdN semiconductor

Energy Technology Data Exchange (ETDEWEB)

Vidyasagar, Reddithota, E-mail: dr.vidyasagar1979@gmail.com [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Kita, Takashi [Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Sakurai, Takahiro; Shimokawa, Tokuro [Centre for Support to Research and Education Activities, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan); Ohta, Hitoshi [Molecular Photoscience Research Center and Graduate School of Science, Kobe University, 1-1 Rokkodai, Kobe 657-8501 (Japan)

2017-06-15

Using X-band Ferromagnetic Resonance (FMR) Spectroscopy, we demonstrate the microscopic ferromagnetic resonance features of degenerated GdN semiconductor. The FMR spectrum suggests a single resonance mode below 10 K; interestingly, this particular structure is found to exhibit a peculiar magnetic resonance (PMR) on the top of the uniform FMR while temperature increases from 12–36 K. The low-field PMR mode attributed to the differently magnetized part of the film with an easy in-plane axis. The narrow-field gap between PMR and uniform FMR suggests the strong coupling owning to the differently magnetized part with easy in-plane axis and the magnetized part with an out-of-plane axis. The saturation magnetization, cubic magnetocrystalline anisotropy, and uniaxial anisotropy of GdN epitaxial film have been evaluated by the angular-dependence FMR. - Highlights: • Observation of peculiar magnetic resonance (PMR) on the top of ferromagnetic resonance (FMR). • Newly evolving PMR manifests differently magnetized part of the film with an easy in-plane axis. • Narrow gap between PMR and FMR owing to the strong interaction between two spin–wave resonances. • Uniaxial anisotropy increases with GdN thickness decreases.

Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

International Nuclear Information System (INIS)

Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

2013-01-01

The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

Room temperature ferromagnetism in Zn{sub 1-x}Co{sub x}S thin films with wurtzite structure

Energy Technology Data Exchange (ETDEWEB)

Patel, Shiv P., E-mail: shivpoojanbhola@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India); Pivin, J.C. [CSNSM, IN2P3-CNRS, Batiment 108, F-91405 Orsay Campus (France); Chawla, A.K.; Chandra, Ramesh [Nanoscience Laboratory, IIC, Indian Institute of Technology, Roorkee 247667 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kumar, Lokendra, E-mail: lkumarau@gmail.com [Physics Department, University of Allahabad, Allahabad 211002 (India)

2011-11-15

The magnetic properties of Zn{sub 1-x}Co{sub x}S (x=0.025 and 0.05) thin films grown on {alpha}-quartz substrates at different temperatures (T{sub S}) of 200, 400 and 600 deg. C by means of pulsed laser deposition are presented. The films are crystallized with wurtzite structure. Optical absorption and transmission electron microscopy measurements indicate that Co ions are substituted to Zn on tetrahedral sites. Their magnetic response is composed of ferromagnetic and paramagnetic components of which respective strengths depend on T{sub S} and Co concentration. This behavior is interpreted as due to fluctuations in the magnetic ordering, depending on grain size and site location in grain boundaries or in crystal cores. - Highlights: > Co doped ZnS thin films have been fabricated at different substrate temperatures. > Magnetization in the films changes with changing substrate temperature. > Substitution of Co on Zn sites gives room temperature intrinsic ferromagnetism. > Magnetization in the films is composed of ferromagnetic and paramagnetic components.

Effect of thickness on magnetic phase coexistence and electrical transport in Nd0.51Sr0.49MnO3 films

International Nuclear Information System (INIS)

Prasad, R.; Singh, M.P.; Fournier, P.; Siwach, P.K.; Singh, H.K.; Kaur, A.

2010-01-01

We present the impact of the film thickness on the coexistence of various magnetic phases and its link to the magnetoresistance of Nd 0.51 Sr 0.49 MnO 3 thin films. These epitaxial films are deposited on LaAlO 3 (001) substrates by DC magnetron sputtering. Films with thicknesses of approximately 30 nm are found to be under full compressive strain while those with thicknesses ∝100 nm and beyond exhibit the presence of both strained and relaxed phases, as evidenced from X-ray diffraction studies. Both films exhibit multiple magnetic transitions controlled by strong electron correlations and phase coexistence. These films also display insulator-metal transitions (IMT) and colossal magnetoresistance (CMR) under moderate magnetic fields. Among the two set of films, only the 30-nm films show a weak signature of charge ordering at T∼50 K. Even at temperatures much lower than the IMT, the 30-nm films show huge magnetoresistance (MR) ∝80%. This suggests presence of softened charge-ordered insulating (COI) clusters that are transformed into ferromagnetic metallic (FMM) ones by the external magnetic field. In the 100-nm films, the corresponding MR is suppressed to less than 20%. Our study demonstrates that the softening of the COI phase is induced by the combined effect of the in-plane compressive strain and a slight reduction in Sr concentration. (orig.)

Ferromagnetic resonance in coupled permalloy double films separated by a Cu interlayer

Science.gov (United States)

Maksymowicz, A. Z.; Whiting, J. S. S.; Watson, M. L.; Chambers, A.

1991-03-01

Ferromagnetic resonance (FMR) at 16 GHz was used to study the magnetic coupling between two-layers of permalloy separated by a nonmagnetic Cu layer. Samples with the same thickness (600 Å) of both permalloy layers were deposited from e-gun sources onto glass substrates in UHV. The thickness d of the Cu interlayer was varied from 5 to 37 Å. The exchange coupling energy ( E = - KM1· M2) model was used to describe the interaction between the two magnetic layers. It was found from the ferromagnetic resonance data in the perpendicular configuration that K( d) follows an exponential law, K = K0e - d/ q, where q = 9.3 Å.

Critical behavior of ferromagnetic La0.7Sr0.3CoO3 thin films

International Nuclear Information System (INIS)

Schwarz, T.

2007-07-01

The present thesis concentrates on the critical behavior of ferromagnetic La 0.7 Sr 0.3 CoO 3 thin films (LSCO) close to the magnetic phase transition. The LSCO thin films were prepared by pulsed laser deposition and optimized with respect to their structural and magnetic properties. For the characterization of the structural and magnetic characteristics various methods were used. By means of X-ray diffraction and electron microscopy the crystallinity and microstructure of the epitaxial films were examined, respectively. The analysis of the chemical composition was accomplished by Rutherford backscattering and energy dispersive X-ray diffraction (EDX). Parallel to the investigations of the LSCO films a low-temperature measuring system for electrical measurements in magnetic fields up to 8 T in a temperature range from 1.5 K to 300 K was developed and built up including the necessary control and measuring software. The central point of this work was dedicated to the characterization of the magnetic characteristics of the LSCO films. In comparison, single crystals and polycrystalline bulk samples were also available. At these samples temperature-dependent and isothermal magnetization measurements were accomplished by a SQUID magnetometer. To determine the critical behavior of the samples the critical exponents of the susceptibility and the spontaneous magnetization in the proximity of the ferromagnetic phase transition were determined. For the exact determination of the critical exponents from the experimental data an evaluation routine in Matlab on basis of the Arrott representation method was used. In addition to the investigations of the critical behavior, electrical transportation measurements and neutron reflection measurements with spin-polarized neutrons were performed. The investigations of this work show that, in contrast to the critical behavior of single-crystal LSCO volume samples where a three-dimensional Heisenberg behavior could be observed, the

Influence of processing parameters on PZT thick films

International Nuclear Information System (INIS)

Huang, Oliver; Bandyopadhyay, Amit; Bose, Susmita

2005-01-01

We have studied influence of processing parameters on the microstructure and ferroelectric properties of lead zirconate titanate (PZT)-based thick films in the range of 5-25 μm. PZT and 2% La-doped PZT thick films were processed using a modified sol-gel process. In this process, PZT- and La-doped PZT powders were first prepared via sol-gel. These powders were calcined and then used with respective sols to form a slurry. Slurry composition was optimized to spin-coat thick films on platinized Si substrate (Si/SiO 2 /Ti/Pt). Spinning rate, acceleration and slurry deposition techniques were optimized to form thick films with uniform thickness and without any cracking. Increasing solids loading was found to enhance the surface smoothness of the film and decrease porosity. Films were tested for their electrical properties and ferroelectric fatigue response. The maximum polarization obtained was 40 μC/cm 2 at 250 kV/cm for PZT thick film and 30 μC/cm 2 at 450 kV/cm for La-doped PZT thick film. After 10 9 cycles of fatiguing at 35 kHz, La-doped PZT showed better resistance for ferroelectric fatigue compared with un-doped PZT films

Thickness-dependent enhancement of damping in C o2FeAl /β -Ta thin films

Science.gov (United States)

Akansel, Serkan; Kumar, Ankit; Behera, Nilamani; Husain, Sajid; Brucas, Rimantas; Chaudhary, Sujeet; Svedlindh, Peter

2018-04-01

In the present work C o2FeAl (CFA) thin films were deposited by ion beam sputtering on Si (100) substrates at the optimized deposition temperature of 300 °C. A series of CFA films with different thicknesses (tCFA), 8, 10, 12, 14, 16, 18, and 20 nm, were prepared and all samples were capped with a 5-nm-thick β-Ta layer. The thickness-dependent static and dynamic properties of the films were studied by SQUID magnetometry, in-plane as well as out-of-plane broadband vector network analyzer-ferromagnetic resonance (FMR) measurements, and angle-dependent cavity FMR measurements. The saturation magnetization and the coercive field were found to be weakly thickness dependent and lie in the range 900-950 kA/m and 0.53-0.87 kA/m, respectively. The effective damping parameter (αeff) extracted from in-plane and out-of-plane FMR results reveals a 1/tCFA dependence, the values for the in-plane αeff being larger due to two-magnon scattering (TMS). The origin of the αeff thickness dependence is spin pumping into the nonmagnetic β-Ta layer and in the case of the in-plane αeff, also a thickness-dependent TMS contribution. From the out-of-plane FMR results, it was possible to disentangle the different contributions to αeff and to the extract values for the intrinsic Gilbert damping (αG) and the effective spin-mixing conductance (geff↑↓) of the CFA/ β-Ta interface, yielding αG=(1.1 ±0.2 ) ×10-3 and geff↑↓=(2.90 ±0.10 ) ×1019m-2 .

The Thickness Dependence of Optical Constants of Ultrathin Iron Films

International Nuclear Information System (INIS)

Gao Shang; Lian Jie; Wang Xiao; Li Ping; Sun Xiao-Fen; Li Qing-Hao

2013-01-01

Ultrathin iron films with different thicknesses from 7.1 to 51.7 nm are deposited by magnetron sputtering and covered by tantalum layers protecting them from being oxidized. These ultrathin iron films are studied by spectroscopic ellipsometry and transmittance measurement. An extra tantalum film is deposited under the same sputtering conditions and its optical constants and film thickness are obtained by a combination of ellipsometry and transmission measurement. After introducing these obtained optical constants and film thickness into the tantalum-iron film, the optical constants and film thicknesses of ultrathin iron films with different thicknesses are obtained. The results show that combining ellipsometry and transmission measurement improves the uniqueness of the obtained film thickness. The optical constants of ultrathin iron films depend strongly on film thicknesses. There is a broad absorption peak at about 370 nm and it shifts to 410 nm with film thickness decreasing

Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

Directory of Open Access Journals (Sweden)

Yu-Jun Zhang

2015-07-01

Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

Science.gov (United States)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Theoretical investigation of electronic, magnetic and optical properties of Fe doped GaN thin films

International Nuclear Information System (INIS)

Salmani, E.; Mounkachi, O.; Ez-Zahraouy, H.; Benyoussef, A.; Hamedoun, M.; Hlil, E.K.

2013-01-01

Highlights: •Magnetic and optical properties Fe-doped GaN thin films are studied using DFT. •The band gaps of GaN thin films are larger than the one of the bulk. •The layer thickness and acceptor defect can switch the magnetic ordering. -- Abstract: Using first principles calculations based on spin-polarized density functional theory, the magnetic and optical properties of GaN and Fe-doped GaN thin films with and without acceptor defect is studied. The band structure calculations show that the band gaps of GaN thin films with 2, 4 and 6 layers are larger than the one of the bulk with wurtzite structure and decreases with increasing the film thickness. In Fe doped GaN thin films, we show that layer of thickness and acceptor defect can switch the magnetic ordering from disorder local moment (DLM) to ferromagnetic (FM) order. Without acceptor defect Fe doped GaN exhibits spin glass phase in 4 layers form and ferromagnetic state for 2 layers form of the thin films, while it exhibits ferromagnetic phase with acceptor defect such as vacancies defect for 2 and 4 layers. In the FM ordering, the thin films is half-metallic and is therefore ideal for spin application. The different energy between ferromagnetic state and disorder local moment state was evaluated. Moreover, the optical absorption spectra obtained by ab initio calculations confirm the ferromagnetic stability based on the charge state of magnetic impurities

Origin of spin-dependent asymmetries in electron transmission through ultrathin ferromagnetic films

International Nuclear Information System (INIS)

Gokhale, M.P.; Mills, D.L.

1991-01-01

We present theoretical calculations of exchange asymmetries in the transmission of electrons through ultrathin films of ferromagnetic Fe. The results account nicely for the magnitude of the asymmetries observed by Pappas et al. in photoemission studies of Cu covered by an ultrathin film of Fe. We argue that exchange asymmetry in the transmissivity of the Fe film, rather than the spin dependence of the electron mean free path, is responsible for the effects reported by these authors

Thickness Dependent on Photocatalytic Activity of Hematite Thin Films

Directory of Open Access Journals (Sweden)

Yen-Hua Chen

2012-01-01

Full Text Available Hematite (Fe2O3 thin films with different thicknesses are fabricated by the rf magnetron sputtering deposition. The effects of film thicknesses on the photocatalytic activity of hematite films have been investigated. Hematite films possess a polycrystalline hexagonal structure, and the band gap decreases with an increase of film thickness. Moreover, all hematite films exhibit good photocatalytic ability under visible-light irradiation; the photocatalytic activity of hematite films increases with the increasing film thickness. This is because the hematite film with a thicker thickness has a rougher surface, providing more reaction sites for photocatalysis. Another reason is a lower band gap of a hematite film would generate more electron-hole pairs under visible-light illumination to enhance photocatalytic efficiency. Experimental data are well fitted with Langmuir-Hinshelwood kinetic model. The photocatalytic rate constant of hematite films ranges from 0.052 to 0.068 min-1. This suggests that the hematite film is a superior photocatalyst under visible-light irradiation.

Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

International Nuclear Information System (INIS)

Yu, Fengmei; Liu, Yajing; Yang, Mei; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

2013-01-01

η-phase manganese nitride films have been grown on LaAlO 3 (100) and LaSrAlO 4 (001) substrates by using plasma-assisted molecular beam epitaxy. On the basis of reflective high energy electron diffraction, X-ray diffraction, and X-ray photoemission spectroscopy, it is confirmed that two types of η-Mn 3 N 2 with different lattice constants coexist in the films due to the lattice mismatches between the Mn 3 N 2 films and the substrates. Magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at room temperature. The Mn 3 N 2 films on LaAlO 3 substrate were found to have room-temperature ferromagnetism. Two potential interaction mechanisms are proposed regarding the origin of the observed ferromagnetism. - Highlights: ► The films of two types of η-Mn 3 N 2 have been grown by molecular beam epitaxy. ► Mn 3 N 2 A and Mn 3 N 2 B coexisted in the films on LaAlO 3 and LaSrAlO 4 . ► The room-temperature ferromagnetism of the Mn 3 N 2 films on LaAlO 3 was obtained

Effect of the change in the interface structure of Pd(100)/SrTiO{sub 3} for quantum-well induced ferromagnetism

Energy Technology Data Exchange (ETDEWEB)

Sakuragi, Shunsuke, E-mail: sakuragi@az.appi.keio.ac.jp [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan); Ogawa, Tomoyuki [Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579 (Japan); Sato, Tetsuya [Department of Applied Physics and Physico-Informatics, Faculty of Science and Technology, Keio University, Hiyoshi, Yokohama 223-0061 (Japan)

2017-02-01

Measurements of temperature dependent magnetization of Pd(100) ultrathin films on SrTiO{sub 3}(100) substrates which shows quantum-well induced ferromagnetism were performed. We observed the jump in magnetization of Pd(100) due to the structural phase transition of SrTiO{sub 3}, and then, the disappearance of ferromagnetism after temperature-cycle repetition. X-ray reflectivity measurement revealed that the density of a few layers in the Pd film decreased near the Pd/SrTiO{sub 3} interface after temperature cycles. This suggests that the structural change affects the quantum-well induced ferromagnetism, and lowering of the crystallinity of Pd at the interface has a negative effect on quantum-well induced ferromagnetism of Pd(100) ultrathin films. - Highlights: • Interface manipulation of quantum-well induced ferromagnetism was performed. • Ferromagnetic Pd(100) ultrathin films on SrTiO{sub 3} substrate were prepared. • The structural phase transition of SrTiO{sub 3} degraded gradually the interface structure. • Change in the interface structure caused change in the magnetic moment of Pd. • Magnetic change was interpreted by modulation in the effective thickness of the film.

Film-thickness and composition dependence of epitaxial thin-film PZT-based

NARCIS (Netherlands)

Nguyen, Duc Minh; Dekkers, Jan M.; Vu, Hung Ngoc; Rijnders, Augustinus J.H.M.

2013-01-01

The transverse piezoelectric coefficient e31,f and mass-sensitivity were measured on piezoelectric cantilevers based on epitaxial PZT thin-films with film-thicknesses ranging from 100 to 2000 nm. The highest values of e31,f and mass-sensitivity were observed at a film thickness of 500–750 nm, while

Thickness dependent structural, magnetic and magneto-transport properties of epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Kumar, Pawan, E-mail: p.kumar@krmangalam.edu.in [School of Basic and Applied Sciences, K. R. Mangalam University, Sohna Road, Gurgaon, Haryana 122103 (India); Singh, Hari Krishna, E-mail: hks65@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India)

2016-05-06

We report the thickness-dependent structural, magnetic and magneto-transport properties in epitaxial Nd{sub 0.50}Sr{sub 0.50}MnO{sub 3} thin films (10 to 300nm) prepared by DC magnetron sputtering technique on single crystalline (001) oriented substrate LaAlO{sub 3}. X-ray diffraction pattern reveals the epitaxial growth of all the films and the out-of-plane lattice parameter of films were found to increase with thickness. As thickness of the film increases the paramagnetic insulator (PMI) to ferromagnetic metal (FMM) transition temperature (T{sub C}), charge ordered transition temperature (T{sub CO}) and magnetic moment were found to increase with a strong bifurcation in ZFC-FC magnetization. The asymmetry in the coercivity seen in field dependent magnetization loops (M-H loops) suggests the presence of exchange bias (EB) effect. While temperature dependent resistivity of films show the semiconducting nature for thickness 10-200nm in temperature range from 5-300K, the film of thickness 300nm shows the insulator to metal transition with transition temperature (T{sub IM}) at 175K. Temperature dependent low field magnetoresistance (LFMR) measured at 4kOe found to decrease with thickness and for high field magnetoresistance (HFMR) at 40kOe and 60kOe also show similar dependence and a crossover at intermediate temperature range in the magnitude of MR between 10nm and 200nm films at constant field. Colossal increase in magnetoresistance observed for 10nm film at low temperature.

Film thickness determination by grazing incidence diffraction

Energy Technology Data Exchange (ETDEWEB)

Battiston, G A; Gerbasi, R [CNR, Padua (Italy). Istituto di Chimica e Tecnologie Inorganiche e dei Materiali Avanzati

1996-09-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive.

Film thickness determination by grazing incidence diffraction

International Nuclear Information System (INIS)

Battiston, G. A.; Gerbasi, R.

1996-01-01

Thin films deposited via MOCVD (Metal Organic Chemical Vapour Deposition) are layers in the thickness range of a few manometers to about ten micrometers. An understanding of the physics and chemistry of films is necessary for a better comprehension of the phenomena involved in the film deposition procedure and its optimisation. Together with the crystalline phase a parameter that must be determined is the thickness of the layer. In this work the authors present a method for the measurement of the film thickness. This procedure, based on diffraction intensity absorption of the X-rays, both incident and diffracted in passing through the layers, resulted quite simple, rapid and non-destructive

Ferromagnetism and nonmetallic transport of thin-film α-FeSi(2): a stabilized metastable material.

Science.gov (United States)

Cao, Guixin; Singh, D J; Zhang, X-G; Samolyuk, German; Qiao, Liang; Parish, Chad; Jin, Ke; Zhang, Yanwen; Guo, Hangwen; Tang, Siwei; Wang, Wenbin; Yi, Jieyu; Cantoni, Claudia; Siemons, Wolter; Payzant, E Andrew; Biegalski, Michael; Ward, T Z; Mandrus, David; Stocks, G M; Gai, Zheng

2015-04-10

A metastable phase α-FeSi_{2} was epitaxially stabilized on a silicon substrate using pulsed laser deposition. Nonmetallic and ferromagnetic behaviors are tailored on α-FeSi_{2} (111) thin films, while the bulk material of α-FeSi_{2} is metallic and nonmagnetic. The transport property of the films renders two different conducting states with a strong crossover at 50 K, which is accompanied by the onset of a ferromagnetic transition as well as a substantial magnetoresistance. These experimental results are discussed in terms of the unusual electronic structure of α-FeSi_{2} obtained within density functional calculations and Boltzmann transport calculations with and without strain. Our finding sheds light on achieving ferromagnetic semiconductors through both their structure and doping tailoring, and provides an example of a tailored material with rich functionalities for both basic research and practical applications.

Mapping the Landscape of Domain-Wall Pinning in Ferromagnetic Films Using Differential Magneto-Optical Microscopy

Science.gov (United States)

Badea, Robert; Berezovsky, Jesse

2016-06-01

The propagation of domain walls in a ferromagnetic film is largely determined by domain-wall pinning at defects in the material. In this article, we map the effective potential landscape for domain-wall pinning in permalloy films by raster scanning a single ferromagnetic vortex and monitoring the hysteretic vortex displacement vs applied magnetic field. The measurement is carried out using a differential magneto-optical microscopy technique which yields spatial sensitivity of approximately 10 nm. We present a simple algorithm for extracting an effective pinning potential from the measurement of vortex displacement vs applied field. The resulting maps of the pinning potential reveal distinct types of pinning sites, which we attribute to quasi-zero-, one-, and two-dimensional defects in the permalloy film.

Aluminum oxide film thickness and emittance

International Nuclear Information System (INIS)

Thomas, J.K.; Ondrejcin, R.S.

1991-11-01

Aluminum reactor components which are not actively cooled could be subjected to high temperatures due to gamma heating after the core coolant level dropped during the ECS phase of a hypothetical LOCA event. Radiative heat transfer is the dominant heat transfer process in this scenario and therefore the emittance of these components is of interest. Of particular interest are the safety rod thimbles and Mark 60B blanket assemblies; for the K Reactor, these components have been exposed to low temperature (< 55 degrees C) moderator for about a year. The average moderator temperature was assumed to be 30 degrees C. The Al oxide film thickness at this temperature, after one year of exposure, is predicted to be 6.4 μm ± 10%; insensitive to exposure time. Dehydration of the film during the gamma heating accident would result in a film thickness of 6.0 μm ± 11%. Total hemispherical emittance is predicted to be 0.69 at 96 degrees C, decreasing to 0.45 at 600 degrees C. Some phenomena which would tend to yield thicker oxide films in the reactor environment relative to those obtained under experimental conditions were neglected and the predicted film thickness values are therefore conservative. The emittance values predicted for a given film thickness are also conservative. The conservativisms inherent in the predicted emittance are particularly relevant for uncertainty analysis of temperatures generated using these values

Strain induced ferromagnetism and large magnetoresistance of epitaxial La1.5Sr0.5CoMnO6 thin films

Science.gov (United States)

Krishna Murthy, J.; Jyotsna, G.; N, Nileena; Anil Kumar, P. S.

2017-08-01

In this study, the structural, magnetic, and magneto-transport properties of La1.5Sr0.5CoMnO6 (LSCMO) thin films deposited on a SrTiO3 (001) substrate were investigated. A normal θ/2θ x-ray diffraction, rocking curve, ϕ-scan, and reciprocal space mapping data showed that prepared LSCMO thin films are single phase and highly strained with epitaxial nature. Temperature vs. magnetization of LSCMO films exhibits strain-induced ferromagnetic ordering with TC ˜ 165 K. In contrast to the bulk samples, there was no exchange bias and canted type antiferromagnetic and spin glass behavior in films having thickness (t) ≤ 26 nm. Temperature dependent resistivity data were explained using Schnakenberg's model and the polaron hopping conduction process. The slope change in resistivity and magnetoresistance maximum (˜65%) around TC indicates the existence of a weak double exchange mechanism between the mixed valence states of transition metal ions. Suppression of spin dependent scattering with the magnetic field is attributed for the large negative magnetoresistance in LSCMO films.

Transport and magnetism correlations in thin-film ferromagnetic oxides

International Nuclear Information System (INIS)

Hundley, M.F.; Neumeier, J.J.; Heffner, R.H.; Jia, Q.X.; Wu, X.D.; Thompson, J.D.

1995-01-01

In order to determine the T c -dependence of the colossal magnetoresistance (MR) exhibited by the ferromagnetic La 0.7 M 0.3 MnO 3+σ (M = Ba, Ca, Sr) system, the authors examine the magnetic-field and temperature dependent resistivity and magnetization of a series of thin films that were grown via pulsed-laser deposition. The films had magnetic ordering temperatures (T C ) ranging from 150 to 350 K; all samples displayed a large negative MR that is largest near T c . The magnitude of a given sample's MR at T c inversely correlates with T c ; samples with a low T c display significantly larger MR values than do samples with large T c 's. The quantity ρ(T c )/ρ(4 K), the amount by which the resistivity is reduced by full ferromagnetic order, is an activated function of T c with an activation energy E a = 0.1 eV. These results indicate that the magnitude of the CMR effect in a given specimen is controlled not by ρ(T c ), but by T c via the ratio ρ(T c )/ρ(4 K). Phenomenological scaling relationships are also reported that link ρ(H,T) to both H and M(H, T)

Interferometric measurement of film thickness during bubble blowing

Science.gov (United States)

Wang, Z.; Mandracchia, B.; Ferraro, V.; Tammaro, D.; Di Maio, E.; Maffettone, P. L.; Ferraro, P.

2017-06-01

In this paper, we propose digital holography in transmission configuration as an effective method to measure the time-dependent thickness of polymeric films during bubble blowing. We designed a complete set of experiments to measure bubble thickness, including the evaluation of the refractive index of the polymer solution. We report the measurement of thickness distribution along the film during the bubble formation process until the bubble`s rupture. Based on those data, the variation range and variation trend of bubble film thickness are clearly measured during the process of expansion to fracture is indicated.

Ferromagnetism and interlayer exchange coupling in thin metallic films

Energy Technology Data Exchange (ETDEWEB)

Kienert, Jochen

2008-07-15

This thesis is concerned with the ferromagnetic Kondo lattice (s-d,s-f) model for film geometry. The spin-fermion interaction of this model refers to substances in which localized spins interact with mobile charge carriers like in (dilute) magnetic semiconductors, manganites, or rare-earth compounds. The carrier-mediated, indirect interaction between the localized spins comprises the long-range, oscillatory RKKY exchange interaction in the weak-coupling case and the short-range doubleexchange interaction for strong spin-fermion coupling. Both limits are recovered in this work by mapping the problem onto an effective Heisenberg model. The influence of reduced translational symmetry on the effective exchange interaction and on the magnetic properties of the ferromagnetic Kondo lattice model is investigated. Curie temperatures are obtained for different parameter constellations. The consequences of charge transfer and of lattice relaxation on the magnetic stability at the surface are considered. Since the effective exchange integrals are closely related to the electronic structure in terms of the density of states and of the kinetic energy, the discussion is based on the modifications of these quantities in the dimensionally-reduced case. The important role of spin waves for thin film and surface magnetism is demonstrated. Interlayer exchange coupling represents a particularly interesting and important manifestation of the indirect interaction among localized magnetic moments. The coupling between monatomic layers in thin films is studied in the framework of an RKKY approach. It is decisively determined by the type of in-plane and perpendicular dispersion of the charge carriers and is strongly suppressed above a critical value of the Fermi energy. Finally, the temperature-dependent magnetic stability of thin interlayer-coupled films is addressed and the conditions for a temperature-driven magnetic reorientation transition are discussed. (orig.)

NdFeB thick films prepared by tape casting

International Nuclear Information System (INIS)

Pawlowski, B.; Schwarzer, S.; Rahmig, A.; Toepfer, J.

2003-01-01

NdFeB films of thickness between 100 and 800 μm were prepared by tape casting of a slurry containing 84-95 wt% of commercial NdFeB powder (MQP-B, -Q and -S). After curing the flexible green tapes at 120 deg. C non-porous magnetic films are obtained. The remanence of the films is in the range of 350-450 mT and the coercivity is between 300 and 800 kA/m depending on the type of MQP powder used. The magnetic properties of the films are discussed in relation to film composition and type of magnetic material. For MEMS applications the thick films are magnetized with a multi-pole stripe pattern with 1 mm pole pitch. The induction at the surface of the films was measured with a Hall probe and compared to theoretical calculations. The results indicate that the films are completely magnetized regardless of the film thickness. Tape-casted NdFeB thick films are promising candidates for applications in micro-systems or actuators. Miniaturization of the magnet components is one of the key issues in the development of electromagnetic micro-systems, thus creating a need for replacement of small sintered magnets by magnetic thick film components. Other applications include encoders

Magnetic properties of ultrathin Co/Ge(111) and Co/Ge(100) films

International Nuclear Information System (INIS)

Cheng, W. C.; Tsay, J. S.; Yao, Y. D.; Lin, K. C.; Yang, C. S.; Lee, S. F.; Tseng, T. K.; Neih, H. Y.

2001-01-01

The orientation of the magnetization and the occurrence of interfacial ferromagnetic inactive layers for ultrathin Co films grown on Ge(111) and Ge(100) surfaces have been studied using the in situ surface magneto-optic Kerr effect. On a Ge(111) substrate, cobalt films (≤28 monolayers) with in-plane easy axis of magnetization have been observed; however, on a Ge(100) substrate, ultrathin Co films (14 - 16 monolayers) with canted out-of-plane easy axis of magnetization were measured. The ferromagnetic inactive layers were formed due to the intermixing of Co and Ge and lowering the Curie temperature by reducing Co film thickness. The Co - Ge compound inactive layers were 3.8 monolayers thick for Co films grown on Ge(111) and 6.2 monolayers thick for Co films deposited on Ge(100). This is attributed to the difference of the density of surface atoms on Ge(111) and Ge(100). [copyright] 2001 American Institute of Physics

Effect of diffraction and film-thickness gradients on wafer-curvature measurements of thin-film stress

International Nuclear Information System (INIS)

Breiland, W.G.; Lee, S.R.; Koleske, D.D.

2004-01-01

When optical measurements of wafer curvature are used to determine thin-film stress, the laser beams that probe the sample are usually assumed to reflect specularly from the curved surface of the film and substrate. Yet, real films are not uniformly thick, and unintended thickness gradients produce optical diffraction effects that steer the laser away from the ideal specular condition. As a result, the deflection of the laser in wafer-curvature measurements is actually sensitive to both the film stress and the film-thickness gradient. We present a Fresnel-Kirchhoff optical diffraction model of wafer-curvature measurements that provides a unified description of these combined effects. The model accurately simulates real-time wafer-curvature measurements of nonuniform GaN films grown on sapphire substrates by vapor-phase epitaxy. During thin-film growth, thickness gradients cause the reflected beam to oscillate asymmetrically about the ideal position defined by the stress-induced wafer curvature. This oscillating deflection has the same periodicity as the reflectance of the growing film, and the deflection amplitude is a function of the film-thickness gradient, the mean film thickness, the wavelength distribution of the light source, the illuminated spot size, and the refractive indices of the film and substrate. For typical GaN films grown on sapphire, misinterpretation of these gradient-induced oscillations can cause stress-measurement errors that approach 10% of the stress-thickness product; much greater errors occur in highly nonuniform films. Only transparent films can exhibit substantial gradient-induced deflections; strongly absorbing films are immune

Superconducting Ferromagnetic Nanodiamond.

Science.gov (United States)

Zhang, Gufei; Samuely, Tomas; Xu, Zheng; Jochum, Johanna K; Volodin, Alexander; Zhou, Shengqiang; May, Paul W; Onufriienko, Oleksandr; Kačmarčík, Jozef; Steele, Julian A; Li, Jun; Vanacken, Johan; Vacík, Jiri; Szabó, Pavol; Yuan, Haifeng; Roeffaers, Maarten B J; Cerbu, Dorin; Samuely, Peter; Hofkens, Johan; Moshchalkov, Victor V

2017-06-27

Superconductivity and ferromagnetism are two mutually antagonistic states in condensed matter. Research on the interplay between these two competing orderings sheds light not only on the cause of various quantum phenomena in strongly correlated systems but also on the general mechanism of superconductivity. Here we report on the observation of the electronic entanglement between superconducting and ferromagnetic states in hydrogenated boron-doped nanodiamond films, which have a superconducting transition temperature T c ∼ 3 K and a Curie temperature T Curie > 400 K. In spite of the high T Curie , our nanodiamond films demonstrate a decrease in the temperature dependence of magnetization below 100 K, in correspondence to an increase in the temperature dependence of resistivity. These anomalous magnetic and electrical transport properties reveal the presence of an intriguing precursor phase, in which spin fluctuations intervene as a result of the interplay between the two antagonistic states. Furthermore, the observations of high-temperature ferromagnetism, giant positive magnetoresistance, and anomalous Hall effect bring attention to the potential applications of our superconducting ferromagnetic nanodiamond films in magnetoelectronics, spintronics, and magnetic field sensing.

Advantages of PZT thick film for MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Lou-Moller, R.; Hansen, K.

2010-01-01

For all MEMS devices a high coupling between the mechanical and electrical domain is desired. Figures of merit describing the coupling are important for comparing different piezoelectric materials. The existing figures of merit are discussed and a new figure of merit is introduced for a fair comp....... Improved figure of merit is reached in the piezoelectric PZT thick film, TF2100CIP, by using cold isostatic pressure in the PZT preparation process. The porosity of TF2100 is decreased 38%, hence, allowing an increase of charge sensitivity for MEMS sensors of 59%....... thin film and PZT thick film. It is shown that MEMS sensors with the PZT thick film TF2100 from InSensor A/S have potential for significant higher voltage sensitivities compared to PZT thin film base MEMS sensors when the total thickness of the MEMS cantilever, beam, bridge or membrane is high...

Enhancement of room temperature ferromagnetic behavior of rf sputtered Ni-CeO_2 thin films

International Nuclear Information System (INIS)

Murugan, R.; Vijayaprasath, G.; Mahalingam, T.; Ravi, G.

2016-01-01

Highlights: • Ni-CeO_2 thin films deposited by using rf Magnetron sputtering with different concentrations of Ni. • Deposited thin films have single crystalline and uniform surface morphology. • Photoluminescence and micro-Raman spectra were interpreted for Ni-CeO_2 thin films. • XPS spectra confirmed Ni ions were present in the doped CeO_2 thin films. • Ni ions induced ferromagnetic behavior of Ni-CeO_2 films were confirmed through VSM. - Abstract: Ni-doped CeO_2 thin films were prepared under Ar"+ atmosphere on glass substrates using rf magnetron sputtering. To assess the properties of the prepared thin films, the influence of various amounts of Ni dopant on structural, morphological, optical, vibrational, compositional and magnetic properties of the CeO_2 films were studied by using X-Ray diffraction (XRD), atomic force microscope (AFM), photoluminescence (PL), micro-Raman, X-ray photoelectron spectroscopy (XPS) and vibrating sample magnetometer (VSM). XRD patterns for all the samples revealed the expected CeO_2 cubic fluorite-type structure and Ni ions were uniformly distributed in the samples. AFM images of the prepared samples indicate high dense, columnar structure with uniform distribution of CeO_2. Room-temperature photoluminescence (PL) and micro-Raman spectroscopic studies revealed an increase of oxygen vacancies with higher concentration of Ni in CeO_2. XPS results confirm the presence of Ni_2_p, O_1_s and Ce and depict that cerium is present as both Ce"4"+ and Ce"3"+ oxidation states in Ce_1_−_xNi_xO_2 (x = 15%) thin film. Field dependent magnetization measurements revealed a paramagnetic behavior for pure CeO_2, while a ferromagnetic behavior appeared when Ni is doped in CeO_2 films. Doping dependent magnetization measurements suggest that the observed ferromagnetism is due to the presence of metallic Ni clusters with nanometric size and broad size distribution.

Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

Directory of Open Access Journals (Sweden)

Busi Rambabu

2014-01-01

Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

Energy Technology Data Exchange (ETDEWEB)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao, E-mail: yxzheng@fudan.edu.c [Key Laboratory of Micro and Nano Photonic Structures, Ministry of Education, Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China)

2010-11-10

A series of SiO{sub 2} films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO{sub 2} films thicker than 60 nm are close to those of bulk SiO{sub 2}. For the thin films deposited at the rate of {approx}1.0 nm s{sup -1}, the refractive indices increase with decreasing thickness from {approx}60 to {approx}10 nm and then drop sharply with decreasing thickness below {approx}10 nm. However, for thin films deposited at the rates of {approx}0.4 and {approx}0.2 nm s{sup -1}, the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Evolution of optical constants of silicon dioxide on silicon from ultrathin films to thick films

International Nuclear Information System (INIS)

Cai Qingyuan; Zheng Yuxiang; Mao Penghui; Zhang Rongjun; Zhang Dongxu; Liu Minghui; Chen Liangyao

2010-01-01

A series of SiO 2 films with thickness range 1-600 nm have been deposited on crystal silicon (c-Si) substrates by electron beam evaporation (EBE) method. Variable-angle spectroscopic ellipsometry (VASE) in combination with a two-film model (ambient-oxide-interlayer substrate) was used to determine the optical constants and thicknesses of the investigated films. The refractive indices of SiO 2 films thicker than 60 nm are close to those of bulk SiO 2 . For the thin films deposited at the rate of ∼1.0 nm s -1 , the refractive indices increase with decreasing thickness from ∼60 to ∼10 nm and then drop sharply with decreasing thickness below ∼10 nm. However, for thin films deposited at the rates of ∼0.4 and ∼0.2 nm s -1 , the refractive indices monotonically increase with decreasing thickness below 60 nm. The optical constants of the ultrathin film depend on the morphology of the film, the stress exerted on the film, as well as the stoichiometry of the oxide film.

Self-induced inverse spin-Hall effect in an iron and a cobalt single-layer films themselves under the ferromagnetic resonance

Science.gov (United States)

Kanagawa, Kazunari; Teki, Yoshio; Shikoh, Eiji

2018-05-01

The inverse spin-Hall effect (ISHE) is produced even in a "single-layer" ferromagnetic material film. Previously, the self-induced ISHE in a Ni80Fe20 film under the ferromagnetic resonance (FMR) was discovered. In this study, we observed an electromotive force (EMF) in an iron (Fe) and a cobalt (Co) single-layer films themselves under the FMR. As origins of the EMFs in the films themselves, the ISHE was main for Fe and dominant for Co, respectively 2 and 18 times larger than the anomalous Hall effect. Thus, we demonstrated the self-induced ISHE in an Fe and a Co single-layer films themselves under the FMR.

A new method for the measurement of the polarization characteristics of ferromagnetic films on ultracold neutrons

International Nuclear Information System (INIS)

Taran, Yu.V.

1985-01-01

A new method has been developed for measuring the polarization characteristics of ferromagnetic films on ultracold neutrons (UCN) by single-, double- and triple-transmission of UCN beam through one and the same film. To realize the method an installation has been proposed consisting of the two UCN storage traps connected with a mirror neutron guide. An investigated film is placed in the slit in the middle of the neutron guide. On both sides of the film a spin-flipper is installed bottle is equiped with three neutron values which permit filling in the bottle with UCN and allow oneto let UCN out to the neutron guide or detector. The neutrons once let out from one bottle into the neutron guide are caught by the other. The film can be moved out of the neutron guide or rotated. By manipulating with spin-flippers and the film one may take the integral polarization parameters of the film: transmission, polarizing and analysing efficiencies, so-called S-factor, which is the fourth independent linear combination of the elements of the square 2x2 transmission matrix of the film. The measurement parameters help to restore the film transmission matrix. Then a comparison is drawn with the theoretical models of UCN depolarization on transmission through a ferromagnetic film

Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

Energy Technology Data Exchange (ETDEWEB)

Huang, Chen-Yu; Wei, Zung-Hang, E-mail: wei@pme.nthu.edu.tw [Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu City 300, Taiwan (China); Lai, Mei-Feng; Ger, Tzong-Rong [Institute of NanoEngineering and MicroSystems, National Tsing Hua University, Hsinchu City 300, Taiwan (China)

2015-05-07

Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering.

Cell culture arrays using micron-sized ferromagnetic ring-shaped thin films

International Nuclear Information System (INIS)

Huang, Chen-Yu; Wei, Zung-Hang; Lai, Mei-Feng; Ger, Tzong-Rong

2015-01-01

Cell patterning has become an important technology for tissue engineering. In this research, domain walls are formed at the two ends of a ferromagnetic ring thin film after applying a strong external magnetic field, which can effectively attract magnetically labeled cells and control the position for biological cell. Magnetophoresis experiment was conducted to quantify the magnetic nanoparticle inside the cells. A ring-shaped magnetic thin films array was fabricated through photolithography. It is observed that magnetically labeled cells can be successfully attracted to the two ends of the ring-shaped magnetic thin film structure and more cells were attracted and further attached to the structures. The cells are co-cultured with the structure and kept proliferating; therefore, such ring thin film can be an important candidate for in-vitro biomedical chips or tissue engineering

Thin Cu film resistivity using four probe techniques: Effect of film thickness and geometrical shapes

Science.gov (United States)

Choudhary, Sumita; Narula, Rahul; Gangopadhyay, Subhashis

2018-05-01

Precise measurement of electrical sheet resistance and resistivity of metallic thin Cu films may play a significant role in temperature sensing by means of resistivity changes which can further act as a safety measure of various electronic devices during their operation. Four point probes resistivity measurement is a useful approach as it successfully excludes the contact resistance between the probes and film surface of the sample. Although, the resistivity of bulk samples at a particular temperature mostly depends on its materialistic property, however, it may significantly differ in the case of thin films, where the shape and thickness of the sample can significantly influence on it. Depending on the ratio of the film thickness to probe spacing, samples are usually classified in two segments such as (i) thick films or (ii) thin films. Accordingly, the geometric correction factors G can be related to the sample resistivity r, which has been calculated here for thin Cu films of thickness up to few 100 nm. In this study, various rectangular shapes of thin Cu films have been used to determine the shape induced geometric correction factors G. An expressions for G have been obtained as a function of film thickness t versus the probe spacing s. Using these expressions, the correction factors have been plotted separately for each cases as a function of (a) film thickness for fixed linear probe spacing and (b) probe distance from the edge of the film surface for particular thickness. Finally, we compare the experimental results of thin Cu films of various rectangular geometries with the theoretical reported results.

Influence of thickness on properties of plasticized oat starch films

Directory of Open Access Journals (Sweden)

Melicia Cintia Galdeano

2013-08-01

Full Text Available The aim of this study was to investigate the effect of thickness (between 80 and 120 µm on apparent opacity, water vapor permeability and mechanical properties (tensile and puncture of oat starch films plasticized with glycerol, sorbitol, glycerol:sorbitol mixture, urea and sucrose. Films were stored under 11, 57, 76 and 90% relative humidity (RH to study the mechanical properties. It was observed that the higher the thickness, the higher was the opacity values. Films without the plasticizer were more opaque in comparison with the plasticized ones. Glycerol:sorbitol films presented increased elongation with increasing thickness at all RH. Puncture force showed a strong dependence on the film thickness, except for the films plasticized with sucrose. In general, thickness did not affect the water permeability.

Film thickness in gas-liquid two-phase flow, (2)

International Nuclear Information System (INIS)

Sekoguchi, Kotohiko; Fukano, Toru; Kawakami, Yasushi; Shimizu, Hideo.

1977-01-01

The effect of four rectangular obstacles inserted into a circular tube has been studied in gas-liquid two-phase flow. The obstacles are set on the inner wall of the tube, and the ratio of the opening is 0.6. The water film flows partially through the obstacles. The minimum thickness of water film was measured in relation to flow speed. The serious effect of the obstacles was seen against the formation of water film, and drainage under the obstacles and backward flow play important roles. Since water film can flow partially through the obstacles, the film in case of the rectangular obstacles in thicker than that in case of an orifice when the gas flow speed was slower than 5 m/s. However, when the gas flow speed is over 5 m/s, the film thickness was thinner. The minimum film thickness of downstream of the obstacles was almost same as that in case of no obstacle. The minimum film thickness of up stream depends on the location of measurement due to the effect of drainage. (Kato, T.)

Anomalously large ferromagnetic resonance linewidth in the Gd/Cr/Fe film plane

Science.gov (United States)

Sun, Li; Zhang, Wen; Wong, Ping Kwan Johnny; Yin, Yuli; Jiang, Sheng; Huang, Zhaocong; Zhai, Ya; Yao, Zhongyu; Du, Jun; Sui, Yunxia; Zhai, Hongru

2018-04-01

As an important parameter for characterizing the magnetization dynamics, Gilbert damping constant α in a thin film or a multilayer is generally extracted from the linear fitting of the frequency-dependence of the ferromagnetic resonance linewidth, sometimes accompanied with a tiny deviation of the linewidth to a smaller value at the low-frequency or high-frequency region due to the two-magnon scattering with an in-plane-field configuration, in which an in-plane magnetic field H perpendicular to a microwave field h was applied in film plane during measurement. In contrast, here we report, in ultrathin Gd/Cr/Fe multilayers, an anomalously large linewidth in the film plane at the low-frequency region. For the first time, we have successfully extracted the Gilbert damping constant from perfect theoretical fitting to the experimental data, by considering the effective direction of the magnetization around in precession staying out of the film plane when the in-pane H at which the precession starts is below the saturation field. This magnetization deviation from the film plane is found to have an obvious contribution to the enhanced linewidth caused by two magnon scattering, while slightly reduce the intrinsic linewidth. Under the same resonance frequency, the deviation angle reaches the maximum values at tCr = 1.0 nm while decreases when tCr increases to 1.5 nm, which coincides with the trend of the surface perpendicular anisotropy constant K⊥. A reduced intrinsic damping constant α is obtained as the introduction of Gd layer and Cr layer as a result of the competition between the spin pumping effect and the interfacial effects at the Fe/Gd and Fe/Cr interfaces. While the decreasing α for film with Cr layer thickness increasing to 1.5 nm might means the contribution of the electron density of states at the Fermi energy n(EF). This study offers an effective way to accurately obtain the intrinsic damping constant of spintronic materials/devices, which is essential

One-step aerosol synthesis of nanoparticle agglomerate films: simulation of film porosity and thickness

International Nuclear Information System (INIS)

Maedler, Lutz; Lall, Anshuman A; Friedlander, Sheldon K

2006-01-01

A method is described for designing nanoparticle agglomerate films with desired film porosity and film thickness. Nanoparticle agglomerates generated in aerosol reactors can be directly deposited on substrates to form uniform porous films in one step, a significant advance over existing technologies. The effect of agglomerate morphology and deposition mechanism on film porosity and thickness are discussed. Film porosity was calculated for a given number and size of primary particles that compose the agglomerates, and fractal dimension. Agglomerate transport was described by the Langevin equation of motion. Deposition enhancing forces such as thermophoresis are incorporated in the model. The method was validated for single spherical particles using previous theoretical studies. An S-shape film porosity dependence on the particle Peclet number typical for spherical particles was also observed for agglomerates, but films formed from agglomerates had much higher porosities than films from spherical particles. Predicted film porosities compared well with measurements reported in the literature. Film porosities increased with the number of primary particles that compose an agglomerate and higher fractal dimension agglomerates resulted in denser films. Film thickness as a function of agglomerate deposition time was calculated from the agglomerate deposition flux in the presence of thermophoresis. The calculated film thickness was in good agreement with measured literature values. Thermophoresis can be used to reduce deposition time without affecting the film porosity

Barium titanate thick films prepared by screen printing technique

Directory of Open Access Journals (Sweden)

Mirjana M. Vijatović

2010-06-01

Full Text Available The barium titanate (BaTiO3 thick films were prepared by screen printing technique using powders obtained by soft chemical route, modified Pechini process. Three different barium titanate powders were prepared: i pure, ii doped with lanthanum and iii doped with antimony. Pastes for screen printing were prepared using previously obtained powders. The thick films were deposited onto Al2O3 substrates and fired at 850°C together with electrode material (silver/palladium in the moving belt furnace in the air atmosphere. Measurements of thickness and roughness of barium titanate thick films were performed. The electrical properties of thick films such as dielectric constant, dielectric losses, Curie temperature, hysteresis loop were reported. The influence of different factors on electrical properties values was analyzed.

Temperature- and thickness-dependent elastic moduli of polymer thin films

Directory of Open Access Journals (Sweden)

Ao Zhimin

2011-01-01

Full Text Available Abstract The mechanical properties of polymer ultrathin films are usually different from those of their counterparts in bulk. Understanding the effect of thickness on the mechanical properties of these films is crucial for their applications. However, it is a great challenge to measure their elastic modulus experimentally with in situ heating. In this study, a thermodynamic model for temperature- (T and thickness (h-dependent elastic moduli of polymer thin films Ef(T,h is developed with verification by the reported experimental data on polystyrene (PS thin films. For the PS thin films on a passivated substrate, Ef(T,h decreases with the decreasing film thickness, when h is less than 60 nm at ambient temperature. However, the onset thickness (h*, at which thickness Ef(T,h deviates from the bulk value, can be modulated by T. h* becomes larger at higher T because of the depression of the quenching depth, which determines the thickness of the surface layer δ.

Influence of Thickness on Ethanol Sensing Characteristics of Doctor-bladed Thick Film from Flame-made ZnO Nanoparticles

Directory of Open Access Journals (Sweden)

Sukon Phanichphant

2007-02-01

Full Text Available ZnO nanoparticles were produced by flame spray pyrolysis (FSP using zincnaphthenate as a precursor dissolved in toluene/acetonitrile (80/20 vol%. The particleproperties were analyzed by XRD, BET, and HR-TEM. The sensing films were produced bymixing the particles into an organic paste composed of terpineol and ethyl cellulose as avehicle binder and were fabricated by doctor-blade technique with various thicknesses (5,10, 15 μm. The morphology of the sensing films was analyzed by SEM and EDS analyses.The gas sensing characteristics to ethanol (25-250 ppm were evaluated as a function of filmthickness at 400°C in dry air. The relationship between thickness and ethanol sensingcharacteristics of ZnO thick film on Al2O3 substrate interdigitated with Au electrodes wereinvestigated. The effects of film thickness, as well as the cracking phenomenon, though,many cracks were observed for thicker sensing films. Crack widths increased withincreasing film thickness. The film thickness, cracking and ethanol concentration havesignificant effect on the sensing characteristics. The sensing characteristics with variousthicknesses were compared, showing the tendency of the sensitivity to ethanol decreasedwith increasing film thickness and response time. The relationship between gas sensingproperties and film thickness was discussed on the basis of diffusively and reactivity of thegases inside the oxide films. The thinnest sensing film (5 μm showed the highest sensitivityand the fastest response time (within seconds.

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

KAUST Repository

Xing, G. Z.

2014-05-23

We report the magnetic and magnetotransport properties of (In 0.985Nd0.015)2O2.89 thin films grown by pulse laser deposition. The clear magnetization hysteresis loops with the complementary magnetic domain structure reveal the intrinsic room temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed to the strong ferromagnetic sp-f exchange interaction in (In0.985Nd0.015)2O 2.89 thin films due to a large Zeeman splitting in an external magnetic field of 50 KOe. © 2014 AIP Publishing LLC.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films

Energy Technology Data Exchange (ETDEWEB)

Krishna, H; Favazza, C [Department of Physics, Washington University in St Louis, MO 63130 (United States); Sachan, R; Strader, J; Kalyanaraman, R [Department of Material Science and Engineering, University of Tennessee, Knoxville, TN 37996 (United States); Khenner, M, E-mail: ramki@utk.edu [Department of Mathematics, Western Kentucky University, Bowling Green, KY 42101 (United States)

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO{sub 2} under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm {<=} h {<=} 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm {<=} h {<=} 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO{sub 2}. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

A new attempt of measurement film thickness by x-ray diffractometry

International Nuclear Information System (INIS)

Kosaka, Masao; Kobayashi, Hideo

1987-01-01

In order to make film thickness measurements independent from the property or the structure of the film materials or the substrate, it is needed to adopt instead of directly utilizing the X-ray diffraction intensity, or attenuation information obtained from the substrate or film material, other new methods for measurement. Among the information obtained by X-ray diffraction, if intensity is excluded, others are F.W.H.M. and diffraction angle, only. If it is possible to investigate the film thickness dependency of the diffraction angle, it should be possible to measure the film thickness by diffraction angle. However, since diffraction angle has no film thickness dependency, it cannot be used directly for measurement. However, if we consider the principle of the X-ray diffractometer method, although it may be very slight, the substrate will be eccentric from the revolving center of the goniometer on account of the thickness of the film. If eccentricity occurs, this will cause changes in the diffraction angle. If we set the radius of the goniometer as R, diffraction angle θ, and the eccentricity from the revolving center of the specimen surface X, the deflection angle Δ2θ of 2θ may be expressed by Δ2θ = -2X · COSθ/R Thus, if X is caused by the film thickness, and by measuring the Δ2θ, it will be possible to measure the film thickness. As a result of the experiment, it was found that X-ray diffraction method can be used for the measurement of the film thickness of a few microns or above by utilizing the eccentricity caused by the film thickness. Especially it has the advantage of being able to measure thick films that X-rays will not penetrate, without being influenced by the chemical structure of the film or the substrates. (author)

Electric Field Controlled Magnetism in BiFeO3/Ferromagnet Films

Science.gov (United States)

Holcomb, M. B.; Chu, Y. H.; Martin, L. W.; Gajek, M.; Seidel, J.; Ramesh, R.; Scholl, A.; Fraile-Rodriguez, A.

2008-03-01

Electric field control of magnetism is a hot technological topic at the moment due to its potential to revolutionize today's devices. Magnetoelectric materials, those having both electric and magnetic order and the potential for coupling between the two, are a promising avenue to approach electric control. BiFeO3, both a ferroelectric and an antiferromagnet, is the only single phase room temperature magnetoelectric that is currently known. In addition to other possibilities, its multiferroic nature has potential in the very active field of exchange bias, where an antiferromagnetic thin film pins the magnetic direction of an adjoining ferromagnetic layer. Since this antiferromagnet is electrically tunable, this coupling could allow electric-field control of the ferromagnetic magnetization. Direction determination of antiferromagnetic domains in BFO has recently been shown using linear and circular dichroism studies. Recently, this technique has been extended to look at the magnetic domains of a ferromagnetic grown on top of BFO. The clear magnetic changes induced by application of electric fields reveal the possibility of electric control.

Film thickness determining method of the silicon isotope superlattices by SIMS

International Nuclear Information System (INIS)

Takano, Akio; Shimizu, Yasuo; Itoh, Kohei M.

2008-01-01

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer

Effect of thickness on optical properties of thermally evaporated SnS films

International Nuclear Information System (INIS)

Selim, M.S.; Gouda, M.E.; El-Shaarawy, M.G.; Salem, A.M.; Abd El-Ghany, W.A.

2013-01-01

The effect of film thickness on the structure and optical properties of thermally evaporated SnS film has been studied. SnS films with different thicknesses in the range 152–585 nm were deposited onto clean glass substrates at room temperature. X-ray diffraction study revealed that SnS films of thickness ≥ 283 nm are crystalline, whereas films of lower thickness exhibit poor crystalline with more amorphous background. The crystalline nature of the lower film thickness has been confirmed using transmission electron microscope and the corresponding electron diffraction pattern. The thicker film samples showed nearly stoichiometric chemical composition; however, thinner samples are deficient in S and rich in Sn. The optical property of the deposited films has been investigated in the wavelength range 350–2500 nm. The refractive index increases notably with increasing film thickness. The refractive index for the investigated film thicknesses are adequately described by the effective-single-oscillator model. The static refractive index and the static dielectric constant have been calculated. Analysis of the optical absorption coefficient revealed the presence of direct optical transition and the corresponding band gap values were found to decrease as the film thickness increases. - Highlights: ► X-ray diffraction was used to study the structure of SnS films. ► Transmission electron microscope confirms the crystalline state of SnS films. ► The refractive index increases notably with increasing the film thickness. ► The optical band gap of SnS films decreases with increasing film thickness

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

International Nuclear Information System (INIS)

Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

2016-01-01

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

KAUST Repository

Benali Kanoun, Mohammed; Goumri-Said, Souraya; Manchon, Aurelien; Schwingenschlö gl, Udo

2012-01-01

We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization

Electroplated thick-film cobalt platinum permanent magnets

International Nuclear Information System (INIS)

Oniku, Ololade D.; Qi, Bin; Arnold, David P.

2016-01-01

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1 0 CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm 2 ), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1 0 ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B r ~0.8 T, H ci ~800 kA/m, squareness close to 0.9, and BH max of 100 kJ/m 3 ) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm 2 , pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1 0 phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B r ~0.8 T, H ci ~800 kA/m, squareness 0.9, and BH max ~100 kJ/m 3 .

High-throughput measurement of polymer film thickness using optical dyes

Science.gov (United States)

Grunlan, Jaime C.; Mehrabi, Ali R.; Ly, Tien

2005-01-01

Optical dyes were added to polymer solutions in an effort to create a technique for high-throughput screening of dry polymer film thickness. Arrays of polystyrene films, cast from a toluene solution, containing methyl red or solvent green were used to demonstrate the feasibility of this technique. Measurements of the peak visible absorbance of each film were converted to thickness using the Beer-Lambert relationship. These absorbance-based thickness calculations agreed within 10% of thickness measured using a micrometer for polystyrene films that were 10-50 µm. At these thicknesses it is believed that the absorbance values are actually more accurate. At least for this solvent-based system, thickness was shown to be accurately measured in a high-throughput manner that could potentially be applied to other equivalent systems. Similar water-based films made with poly(sodium 4-styrenesulfonate) dyed with malachite green oxalate or congo red did not show the same level of agreement with the micrometer measurements. Extensive phase separation between polymer and dye resulted in inflated absorbance values and calculated thickness that was often more than 25% greater than that measured with the micrometer. Only at thicknesses below 15 µm could reasonable accuracy be achieved for the water-based films.

Film-thickness dependence of structure formation in ultra-thin polymer blend films

CERN Document Server

Gutmann, J S; Stamm, M

2002-01-01

We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

Energy Technology Data Exchange (ETDEWEB)

Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2016-05-09

We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

Thickness-dependent spontaneous dewetting morphology of ultrathin Ag films.

Science.gov (United States)

Krishna, H; Sachan, R; Strader, J; Favazza, C; Khenner, M; Kalyanaraman, R

2010-04-16

We show here that the morphological pathway of spontaneous dewetting of ultrathin Ag films on SiO2 under nanosecond laser melting is dependent on film thickness. For films with thickness h of 2 nm < or = h < or = 9.5 nm, the morphology during the intermediate stages of dewetting consisted of bicontinuous structures. For films with 11.5 nm < or = h < or = 20 nm, the intermediate stages consisted of regularly sized holes. Measurement of the characteristic length scales for different stages of dewetting as a function of film thickness showed a systematic increase, which is consistent with the spinodal dewetting instability over the entire thickness range investigated. This change in morphology with thickness is consistent with observations made previously for polymer films (Sharma and Khanna 1998 Phys. Rev. Lett. 81 3463-6; Seemann et al 2001 J. Phys.: Condens. Matter 13 4925-38). Based on the behavior of free energy curvature that incorporates intermolecular forces, we have estimated the morphological transition thickness for the intermolecular forces for Ag on SiO2. The theory predictions agree well with observations for Ag. These results show that it is possible to form a variety of complex Ag nanomorphologies in a consistent manner, which could be useful in optical applications of Ag surfaces, such as in surface enhanced Raman sensing.

Nano-Hydroxyapatite Thick Film Gas Sensors

International Nuclear Information System (INIS)

Khairnar, Rajendra S.; Mene, Ravindra U.; Munde, Shivaji G.; Mahabole, Megha P.

2011-01-01

In the present work pure and metal ions (Co and Fe) doped hydroxyapatite (HAp) thick films have been successfully utilized to improve the structural, morphological and gas sensing properties. Nanocrystalline HAp powder is synthesized by wet chemical precipitation route, and ion exchange process is employed for addition of Co and Fe ions in HAp matrix. Moreover, swift heavy ion irradiation (SHI) technique is used to modify the surface of pure and metal ion exchanged HAp with various ion fluence. The structural investigation of pure and metal ion exchanged HAp thick films are carried out using X-ray diffraction and the presence of functional group is observed by means FTIR spectroscopy. Furthermore, surface morphology is visualized by means of SEM and AFM analysis. CO gas sensing study is carried out for, pure and metal ions doped, HAp thick films with detail investigation on operating temperature, response/recovery time and gas uptake capacity. The surface modifications of sensor matrix by SHI enhance the gas response, response/recovery and gas uptake capacity. The significant observation is here to note that, addition of Co and Fe in HAp matrix and surface modification by SHI improves the sensing properties of HAp films drastically resulting in gas sensing at relatively lower temperatures.

Field driven ferromagnetic phase nucleation and propagation from the domain boundaries in antiferromagnetically coupled perpendicular anisotropy films

Energy Technology Data Exchange (ETDEWEB)

Hauet, Thomas; Gunther, Christian M.; Hovorka, Ondrej; Berger, Andreas; Im, Mi-Young; Fischer, Peter; Hellwig, Olav

2008-12-09

We investigate the reversal process in antiferromagnetically coupled [Co/Pt]{sub X-1}/{l_brace}Co/Ru/[Co/Pt]{sub X-1}{r_brace}{sub 16} multilayer films by combining magnetometry and Magnetic soft X-ray Transmission Microscopy (MXTM). After out-of-plane demagnetization, a stable one dimensional ferromagnetic (FM) stripe domain phase (tiger-tail phase) for a thick stack sample (X=7 is obtained), while metastable sharp antiferromagnetic (AF) domain walls are observed in the remanent state for a thinner stack sample (X=6). When applying an external magnetic field the sharp domain walls of the thinner stack sample transform at a certain threshold field into the FM stripe domain wall phase. We present magnetic energy calculations that reveal the underlying energetics driving the overall reversal mechanisms.

Self-Poling of BiFeO3 Thick Films.

Science.gov (United States)

Khomyakova, Evgeniya; Sadl, Matej; Ursic, Hana; Daniels, John; Malic, Barbara; Bencan, Andreja; Damjanovic, Dragan; Rojac, Tadej

2016-08-03

Bismuth ferrite (BiFeO3) is difficult to pole because of the combination of its high coercive field and high electrical conductivity. This problem is particularly pronounced in thick films. The poling, however, must be performed to achieve a large macroscopic piezoelectric response. This study presents evidence of a prominent and reproducible self-poling effect in few-tens-of-micrometer-thick BiFeO3 films. Direct and converse piezoelectric measurements confirmed that the as-sintered BiFeO3 thick films yield d33 values of up to ∼20 pC/N. It was observed that a significant self-poling effect only appears in cases when the films are heated and cooled through the ferroelectric-paraelectric phase transition (Curie temperature TC ∼ 820 °C). These self-poled films exhibit a microstructure with randomly oriented columnar grains. The presence of a compressive strain gradient across the film thickness cooled from above the TC was experimentally confirmed and is suggested to be responsible for the self-poling effect. Finally, the macroscopic d33 response of the self-poled BiFeO3 film was characterized as a function of the driving-field frequency and amplitude.

Novel room temperature ferromagnetic semiconductors

Energy Technology Data Exchange (ETDEWEB)

Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

2004-06-01

Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

Electroplated thick-film cobalt platinum permanent magnets

Energy Technology Data Exchange (ETDEWEB)

Oniku, Ololade D.; Qi, Bin; Arnold, David P., E-mail: darnold@ufl.edu

2016-10-15

The material and magnetic properties of multi-micron-thick (up to 6 μm) L1{sub 0} CoPt magnetic films electroplated onto silicon substrates are investigated as candidate materials for integration in silicon-based microsystems. The influence of various process conditions on the structure and magnetic properties of electroplated CoPt thick-films is studied in order to better understand the complex process/structure/property relationships associated with the electroplated films. Process variables studied here include different seed layers, electroplating current densities (ranging from 25–200 mA/cm{sup 2}), deposition times (up to 60 min), and post-deposition annealing times and temperatures. Analyses include film morphology, film thickness, composition, surface roughness, grain size, phase volume fractions, and L1{sub 0} ordering parameter. Key correlations are found relating process and structure variations to the extrinsic magnetic properties (remanence, coercivity, squareness, and energy product). Strong hard magnetic properties (B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness close to 0.9, and BH{sub max} of 100 kJ/m{sup 3}) are obtained for films deposited on Si/TiN/Ti/Cu at current densities of 100 mA/cm{sup 2}, pH of 7, and subsequently annealed at 675 °C for 30 min. - Highlights: • CoPt films plated up to 6 μm thick on silicon substrates. • A1 to L1{sub 0} phase transformation by annealing in forming gas. • Various process–structure–property relationships explored. • Key results: B{sub r} ~0.8 T, H{sub ci} ~800 kA/m, squareness 0.9, and BH{sub max} ~100 kJ/m{sup 3}.

Magnetic structure of Tb-Fe films with an artificially layered structure

International Nuclear Information System (INIS)

Yamauchi, K.; Habu, K.; Sato, N.

1988-01-01

The magnetic structure of Tb-Fe films with an artificially layered structure has been investigated by measuring the temperature dependence of the magnetization of the films. Ferrimagnetic coupling between Tb and Fe through the interface was explicitly observed up to about 9-A Tb and 10-A Fe layers. Films with thinner Tb and Fe layers than these thicknesses are composed of only ferrimagnetically coupled Tb-Fe regions. Films with thicker layers of Tb and Fe are composed of ferrimagnetically coupled Tb-Fe, ferromagnetic Fe, ferromagnetic Tb, and/or magnetically compensated Tb regions. The Tb-Fe films exhibit various temperature dependencies of the magnetization corresponding to these magnetic structures

Measurement of the thickness of thin films by backscattered protons

International Nuclear Information System (INIS)

Samaniego, L.E.Q.

1976-07-01

The method of backscattered protons has been used to measure the thickness of thin films. A monoenergetic beam of protons is directed on the film to be measured and the backscattered protons are detected with a particle detector. The film thickness is calculated from the energy spectrum of the protons. In the case of films consisting of several layers of elements with well separated atomic masses, it is possible to separate the spectra of protons scattered from the different elements, permitting a measurement of the thicknesses of the different layers. The method consists of calculating the energy loss of the protons throughout their trajectory, from the point of incidence on the film to the final detection. Thicknesses were measured for the following film combinations: gold on mylar, chromium on mylar, gold on chromium on mylar, and pure mylar. (Author) [pt

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy

International Nuclear Information System (INIS)

Lai Yiuwai; Hofmann, Martin R; Ludwig, Alfred; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios

2011-01-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

Science.gov (United States)

Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

2011-10-01

A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

Fluoride Thin Films: from Exchange Bias to Multferroicity

Science.gov (United States)

Johnson, Trent A.

This dissertation concerns research into the growth and characterization fluoride thin films by molecular beam epitaxy. After a discussion of relevant background material and experimental procedures in the first two chapters, we study exchange bias in magnetic multilayers incorporating the uniaxial antiferromagnet FeF2, grown to varying thicknesses, sandwiched between ferromagnetic Co layers with fixed thicknesses of 5 and 20 nm. Several bilayers with only the 20 nm thick Co layer were grown for comparative study. The samples were grown on Al2O3 (112¯0) substrates at room temperature. In-situ RHEED and x-ray diffraction indicated the films were polycrystalline. The films were determined to have low surface and interlayer roughness, as determined by AFM and x-ray reflectivity. After field-cooling to below the Neel temperature of FeF2 in a magnetic field of 1 kOe, magnetic hysteresis loops were measured as a function of temperature. We found that both layers had a negative exchange bias, with the exchange bias of the thinner layer larger than that of the thicker layer. In addition, the coercivity below the blocking temperature TB of the thinner layer was significantly larger than that of the thick layer, even though the coercivity of the two layers was the same for T > TB. The exchange bias effect, manifested by a shift in these hysteresis loops, showed a strong dependence on the thickness of the antiferromagnet. Anisotropic magnetoresistance measurements provided additional insight into the magnetization reversal mechanism within the ferromagnets. The thickness dependent exchange anisotropy of trilayer and bilayer samples is explained by adapting a random field model to the antiferromagnet/ferromagnet interface. Finally, We investigate the temperature dependent growth, as well as the magnetic and ferroelectric properties of thin films of the multiferroic compounds BaMF4, where M = Fe, Co, Ni. The films were grown to thicknesses of 50 or 100 nm on single crystal Al2

Structural and magneto-dielectric property of (1-x)SBT-xLSMO nanocomposite thin films

International Nuclear Information System (INIS)

Maity, Sarmistha; Bhattacharya, D.; Dhar, A.; Ray, S.K.

2009-01-01

Full text: In recent years, interest in multiferroic materials has been increasing due to their potential applications. As single-phase multiferroic materials have very low room temperature magnetoelectric coefficient, recent studies have been concentrated on the possibility of attaining a coupling between the two order parameters by designing composites with magnetostrictive and piezoelectric phases via stress mediation. Composite thin films with homogenous matrix, composition spread with terminal layers being ferromagnetic and ferroelectric, layer-by-layer growth, superlattices, as well as epitaxial growth of ferromagnetic and ferroelectric layers on suitable substrates are been currently considered. In the present work, a nanostructured composite thin film of strontium bismuth tantalate (SBT) (ferroelectric layer) and lanthanum strontium manganese oxide (LSMO) (ferromagnetic layer) were fabricated using pulsed laser deposition. Phase separated multiferroic thin films with thickness varying from 50nm to 150nm were deposited from composite target (1-x)SBT-xLSMO with x=0.2, 0.5, 0.8. Grazing angle X-ray diffraction study combined with photo electron spectroscopy with depth profiling was carried out to study the phase separation. Interface quality of the thin film on silicon substrate was studied by Rutherford backscattering spectroscopy. Influence of film thickness and composition (x) on the electrical property of film was examined using impedance spectroscopy. The composite films exhibited ferroelectric as well as ferromagnetic characteristics at room temperature. A small kink in the dielectric spectra near the Neel temperature of LSMO confirmed the magneto-electric effect in the nanocomposite films

Phase Sensitive Measurements of Ferromagnetic Josephson Junctions for Cryogenic Memory Applications

Science.gov (United States)

Niedzielski, Bethany Maria

complicated system, first, studies of junctions with only a single ferromagnetic junction were required to determine the 0-pi transition thickness of that material, the decay of the critical current through the junction with thickness, and the switching field of the material. The materials studied included NiFeMo, NiFe, Ni, and NiFeCo. Additionally, roughness studies of several different superconducting base electrodes and normal metal buffer and spacer layers were performed to determine the optimum junction layers. The ferromagnetic layers used were on the order of 1-2 nm thick, so a smooth growth template is imperative to maintain continuous films with in-plane magnetizations. Lastly, single junction spin-valve samples were studied. We are not equipped to measure the phase of a single junction, but series of samples where one ferromagnetic layer is systematically varied in thickness can inform the proper thicknesses needed for 0-pi switching based on relative critical current values between the parallel and antiparallel magnetic configurations. Utilizing this background information, two spin-valve samples were incorporated in a superconducting loop so that the relative phase of the two junctions could be investigated. Through this process, the first phase-controllable ferromagnetic Josephson junctions were experimentally demonstrated using phase-sensitive measurement techniques. This provided the proof of concept for the Josephson Magnetic Random Access Memory (JMRAM), a superconducting memory system in development at Northrop Grumman, with whom we collaborate on this work. Phase-controllable systems were successfully demonstrated using two different magnetic material stacks and verified with several analysis techniques.

Subtractive fabrication of ferroelectric thin films with precisely controlled thickness

Science.gov (United States)

Ievlev, Anton V.; Chyasnavichyus, Marius; Leonard, Donovan N.; Agar, Joshua C.; Velarde, Gabriel A.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro; Ovchinnikova, Olga S.

2018-04-01

The ability to control thin-film growth has led to advances in our understanding of fundamental physics as well as to the emergence of novel technologies. However, common thin-film growth techniques introduce a number of limitations related to the concentration of defects on film interfaces and surfaces that limit the scope of systems that can be produced and studied experimentally. Here, we developed an ion-beam based subtractive fabrication process that enables creation and modification of thin films with pre-defined thicknesses. To accomplish this we transformed a multimodal imaging platform that combines time-of-flight secondary ion mass spectrometry with atomic force microscopy to a unique fabrication tool that allows for precise sputtering of the nanometer-thin layers of material. To demonstrate fabrication of thin-films with in situ feedback and control on film thickness and functionality we systematically studied thickness dependence of ferroelectric switching of lead-zirconate-titanate, within a single epitaxial film. Our results demonstrate that through a subtractive film fabrication process we can control the piezoelectric response as a function of film thickness as well as improve on the overall piezoelectric response versus an untreated film.

Intrinsic flux pinning mechanisms in different thickness MgB2 films

Directory of Open Access Journals (Sweden)

C. Yang

2017-03-01

Full Text Available MgB2 films in four thickness (60 nm, 200nm, 600nm and 1μm have been fabricated by hybrid physical–chemical vapor deposition technique (HPCVD. By measuring the magnetization hysteresis loops and the resistivity, we have obtained the transport and magnetic properties of the four films. After that, the pinning mechanisms in them were discussed. Comparing the pinning behaviors in these ultrathin films, thin films and thick films, it was found that there exist different pinning types in MgB2 films of different thickness. In combination with the study of the surface morphology, cross-section and XRD results, we concluded that MgB2 films had different growth modes in different growth stages. For thin films, films grew along c axis, and grain boundaries acted as surface pinning. While for thick films, films grew along c axis at first, and then changed to a-b axis growth. As a result, the a-b axis grains acted as strong volume pinning.

Optical orientation in ferromagnet/semiconductor hybrids

International Nuclear Information System (INIS)

Korenev, V L

2008-01-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

Optical orientation in ferromagnet/semiconductor hybrids

Science.gov (United States)

Korenev, V. L.

2008-11-01

The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

Optical Orientation in Ferromagnet/Semiconductor Hybrids

OpenAIRE

Korenev, V. L.

2008-01-01

The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

A „Hybrid“ Thin-Film pH Sensor with Integrated Thick-Film Reference

OpenAIRE

Simonis, Anette; Krings, Thomas; Lüth, Hans; Wang, Joseph; Schöning, Michael J.

2001-01-01

A reference electrode fabricated by means of thick-film technique is deposited onto a silicon substrate and combined with a thin-film pH sensor to a “hybrid†chip system. To evaluate the suitability of this combination, first investigations were carried out. The characteristics of the thin-film pH sensor were studied towards the thick-film Ag/AgCl reference electrode. Measurements were performed in the capacitance/voltage (C/V) and constant capacitance (Concap) mode for different pH ...

The resonance susceptibility of two-layer exchange-coupled ferromagnetic film with a combined uniaxial and cubic anisotropy in the layers

Energy Technology Data Exchange (ETDEWEB)

Shul’ga, N.V., E-mail: shulga@anrb.ru; Doroshenko, R.A.

2016-12-01

A numerical investigation of the resonance dynamic susceptibility of ferromagnetic exchange-coupled two-layer films with a combined cubic and uniaxial magnetic anisotropy of the layers has been performed. It has been found that the presence of cubic anisotropy leads to the fact that much of the off-diagonal components of the dynamic susceptibility are nonzero. The change of the ferromagnetic resonance frequencies and dynamic susceptibility upon the magnetization along the [100], [010], and [011] directions have been calculated. The evolution of the profile of the dynamic susceptibility occurring during the magnetization has been described. The impact of changes in the distribution of equilibrium and dynamic components of the magnetization on the dependences of the components of the dynamic susceptibility and the ferromagnetic resonance frequency on the external magnetic fields has been discussed. - Highlights: • The extremes in the dependences of integrated dynamic susceptibility components are observed at low fields. • Lower extremes can be observed at a shift of the localization of the lower FMR mode toward the interface between the layers. • The features of the distribution of the dynamic susceptibility over the thickness have been discussed. • The cubic anisotropy leads to the fact that the off-diagonal integrated dynamic susceptibility components are essential. • FMR signal can be excited in vicinity of the interlayer boundary.

One-dimensional in-plane edge domain walls in ultrathin ferromagnetic films

Science.gov (United States)

Lund, Ross G.; Muratov, Cyrill B.; Slastikov, Valeriy V.

2018-03-01

We study existence and properties of 1D edge domain walls in ultrathin ferromagnetic films with uniaxial in-plane magnetic anisotropy. In these materials, the magnetization vector is constrained to lie entirely in the film plane, with the preferred directions dictated by the magnetocrystalline easy axis. We consider magnetization profiles in the vicinity of a straight film edge oriented at an arbitrary angle with respect to the easy axis. To minimize the micromagnetic energy, these profiles form transition layers in which the magnetization vector rotates away from the direction of the easy axis to align with the film edge. We prove existence of edge domain walls as minimizers of the appropriate 1D micromagnetic energy functional and show that they are classical solutions of the associated Euler-Lagrange equation with a Dirichlet boundary condition at the edge. We also perform a numerical study of these 1D domain walls and uncover further properties of these domain wall profiles.

Non-conductive ferromagnetic carbon-coated (Co, Ni) metal/polystyrene nanocomposites films

Energy Technology Data Exchange (ETDEWEB)

Takacs, H., E-mail: helene.takacs@gmail.com [CEA, LETI, MINATEC Campus, Grenoble 38054 (France); LTM-CNRS-UJF, CEA, LETI, Minatec Campus, Grenoble 38054 (France); Viala, B.; Hermán, V. [CEA, LETI, MINATEC Campus, Grenoble 38054 (France); Tortai, J.-H. [LTM-CNRS-UJF, CEA, LETI, Minatec Campus, Grenoble 38054 (France); Duclairoir, F. [Université Grenoble Alpes, INAC, Grenoble 38054 (France); CEA, INAC, Grenoble 38054 (France)

2016-03-07

This article reports non-conductive ferromagnetic properties of metal/polymer nanocomposite films intended to be used for RF applications. The nanocomposite arrangement is unique showing a core double-shell structure of metal-carbon-polystyrene: M/C//P{sub 1}/P{sub 2}, where M = Co, Ni is the core material, C = graphene or carbon is the first shell acting as a protective layer against oxidation, P{sub 1} = pyrene-terminated polystyrene is the second shell for electrical insulation, and P{sub 2} = polystyrene is a supporting matrix (// indicates actual grafting). The nanocomposite formulation is briefly described, and the film deposition by spin-coating is detailed. Original spin-curves are reported and analyzed. One key outcome is the achievement of uniform and cohesive films at the wafer scale. Structural properties of films are thoroughly detailed, and weight and volume fractions of M/C are considered. Then, a comprehensive overview of DC magnetic and electrical properties is reported. A discussion follows on the magnetic softness of the nanocomposites vs. that of a single particle (theoretical) and the raw powder (experimental). Finally, unprecedented achievement of high magnetization (∼0.6 T) and ultra-high resistivity (∼10{sup 10 }μΩ cm) is shown. High magnetization comes from the preservation of the existing protective shell C, with no significant degradation on the particle net-moment, and high electrical insulation is ensured by adequate grafting of the secondary shell P{sub 1}. To conclude, the metal/polymer nanocomposites are situated in the landscape of soft ferromagnetic materials for RF applications (i.e., inductors and antennas), by means of two phase-diagrams, where they play a crucial role.

Order in nanometer thick intergranular films at Au-sapphire interfaces

Energy Technology Data Exchange (ETDEWEB)

Baram, Mor [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Garofalini, Stephen H. [Department of Materials Science and Engineering, Rutgers University, Piscataway, NJ 08854-8065 (United States); Kaplan, Wayne D., E-mail: kaplan@tx.technion.ac.il [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel)

2011-08-15

Highlights: {yields} Au particles were equilibrated on (0 0 0 1) sapphire in the presence of anorthite. {yields} 1.2 nm thick equilibrium films (complexions) were formed at the Au-sapphire interfaces. {yields} Quantitative HRTEM was used to study the atomistic structure of the films. {yields} Structural order was observed in the 1.2 nm thick films adjacent to the sapphire crystal. {yields} This demonstrates that ordering is an intrinsic part of equilibrium intergranular films. - Abstract: In recent years extensive studies on interfaces have shown that {approx}1 nm thick intergranular films (IGF) exist at interfaces in different material systems, and that IGF can significantly affect the materials' properties. However, there is great deal of uncertainty whether such films are amorphous or partially ordered. In this study specimens were prepared from Au particles that were equilibrated on sapphire substrates in the presence of anorthite glass, leading to the formation of 1.2 nm thick IGF at the Au-sapphire interfaces. Site-specific cross-section samples were characterized using quantitative high resolution transmission electron microscopy to study the atomistic structure of the films. Order was observed in the 1.2 nm thick films adjacent to the sapphire crystal in the form of 'Ca cages', experimentally demonstrating that ordering is an intrinsic part of IGF, as predicted from molecular dynamics and diffuse interface theory.

Spin wave isolator based on frequency displacement nonreciprocity in ferromagnetic bilayer

Energy Technology Data Exchange (ETDEWEB)

Shichi, Shinsuke, E-mail: shinsuke-shichi@murata.com; Matsuda, Kenji; Okajima, Shingo; Hasegawa, Takashi; Okada, Takekazu [Murata Manufacturing Co., Ltd., Kyoto 617-8555 (Japan); Kanazawa, Naoki; Goto, Taichi, E-mail: goto@ee.tut.ac.jp; Takagi, Hiroyuki; Inoue, Mitsuteru [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibari-Ga-Oka, Tempaku, Toyohashi, Aichi 441-8580 (Japan)

2015-05-07

We demonstrated the spin wave isolator using bilayer ferromagnetic media comprising single crystalline and poly-crystalline yttrium iron garnet films, which can control the propagation frequency of magnetostatic waves by the direction of applied magnetic field. This isolator's property does not depend on their thickness then this can be downsized and integrated for nano-scale magnonic circuits. Calculated dispersion relationship shows good agreement with measured one.

Thickness effect on the microstructure, morphology and optoelectronic properties of ZnS films

International Nuclear Information System (INIS)

Prathap, P; Revathi, N; Subbaiah, Y P Venkata; Reddy, K T Ramakrishna

2008-01-01

Thin films of ZnS with thicknesses ranging from 100 to 600 nm have been deposited on glass substrates by close spaced thermal evaporation. All the films were grown at the same deposition conditions except the deposition time. The effect of thickness on the physical properties of ZnS films has been studied. The experimental results indicated that the thickness affects the structure, lattice strain, surface morphology and optoelectronic properties of ZnS films significantly. The films deposited at a thickness of 100 nm showed hexagonal structure whereas films of thickness 300 nm or more showed cubic structure. However, coexistence of both cubic and hexagonal structures was observed in the films of 200 nm thickness. The surface roughness of the films showed an increasing trend at higher thicknesses of the films. A blue-shift in the energy band gap along with an intense UV emission band was observed with the decrease of film thickness, which are ascribed to the quantum confinement effect. The behaviour of optical constants such as refractive index and extinction coefficient were analysed. The variation of refractive index and extinction coefficient with thickness was explained on the basis of the contribution from the packing density of the layers. The electrical resistivity as well as the activation energy were evaluated and found to decrease with the increase of film thickness. The thickness had a significant influence on the optical band gap as well as the luminescence intensity

A method to measure the mean thickness and non-uniformity of non-uniform thin film by alpha-ray thickness gauge

International Nuclear Information System (INIS)

Miyahara, Hiroshi; Yoshida, Makoto; Watanabe, Tamaki

1977-01-01

The α-ray thickness gauge is used to measure non-destructively the thicknesses of thin films, and up to the present day, a thin film with uniform thickness is only taken up as the object of α-ray thickness gauge. When the thickness is determined from the displacement between the absorption curves in the presence and absence of thin film, the absorption curve must be displaced in parallel. When many uniform particles were dispersed as sample, the shape of the absorption curve was calculated as the sum of many absorption curves corresponding to the thin films with different thicknesses. By the comparison of the calculated and measured absorption curves, the number of particles, or the mean superficial density can be determined. This means the extension of thickness measurement from uniform to non-uniform films. Furthermore, these particle models being applied to non-uniform thin film, the possibility of measuring the mean thickness and non-uniformity was discussed. As the result, if the maximum difference of the thickness was more than 0.2 mg/cm 2 , the nonuniformity was considered to distinguish by the usual equipment. In this paper, an α-ray thickness gauge using the absorption curve method was treated, but one can apply this easily to an α-ray thickness gauge using α-ray energy spectra before and after the penetration of thin film. (auth.)

Ferromagnetic semiconductor-metal transition in heterostructures of europium monoxide

Energy Technology Data Exchange (ETDEWEB)

Stollenwerk, Tobias; Kroha, Johann [Physikalisches Institut der Universitaet Bonn (Germany)

2012-07-01

Experiments on thin films of electron doped europium monoxide show a simultaneous ferromagnetic semiconductor-metal transition which goes along with a huge drop in resistivity over several orders of magnitude. Therefore, this material is a very promising candidate for spintronics applications. We have developed a theory which correctly predicts the simultaneous phase transition in thin films of electron doped EuO and the increase of the Curie temperature T{sub C} with doping concentration. The origin of the increased T{sub C} lies in the enhanced RKKY interaction between the localized 4f moments of the Eu atoms. Therefore, the phase transition is controlled by the population of the conduction band. We investigate the influence of film thickness and interface effects on the population of the conduction band and on the magnetic and electronic properties of the EuO film.

Invariance of the magnetic behavior and AMI in ferromagnetic biphase films with distinct non-magnetic metallic spacers

Energy Technology Data Exchange (ETDEWEB)

Silva, E.F. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Gamino, M. [Departamento de Física, Universidade Federal de Pernambuco, 50670-901 Recife, PE (Brazil); Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Andrade, A.M.H. de [Instituto de Física, Universidade Federal do Rio Grande de Sul, 91501-970 Porto Alegre, RS (Brazil); Vázquez, M. [Instituto de Ciencia de Materiales de Madrid, CSIC, 28049 Madrid (Spain); Correa, M.A. [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil); Bohn, F., E-mail: felipebohn@fisica.ufrn.br [Departamento de Física, Universidade Federal do Rio Grande do Norte, 59078-900 Natal, RN (Brazil)

2017-02-01

We investigate the quasi-static magnetic, magnetotransport, and dynamic magnetic properties in ferromagnetic biphase films with distinct non-magnetic metallic spacer layers. We observe that the nature of the non-magnetic metallic spacer material does not have significant influence on the overall biphase magnetic behavior, and, consequently, on the magnetotransport and dynamic magnetic responses. We focus on the magnetoimpedance effect and verify that the films present asymmetric magnetoimpedance effect. Moreover, we explore the possibility of tuning the linear region of the magnetoimpedance curves around zero magnetic field by varying the probe current frequency in order to achieve higher sensitivity values. The invariance of the magnetic behavior and the asymmetric magnetoimpedance effect in ferromagnetic biphase films with distinct non-magnetic metallic spacers place them as promising candidates for probe element and open possibilities to the development of lower-cost high sensitivity linear magnetic field sensor devices.

Percolation effect in thick film superconductors

Energy Technology Data Exchange (ETDEWEB)

Sali, R.; Harsanyi, G. [Technical Univ. of Budapest (Hungary)

1994-12-31

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T{sub c} and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm{sup 2}. The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed.

Percolation effect in thick film superconductors

International Nuclear Information System (INIS)

Sali, R.; Harsanyi, G.

1994-01-01

A thick film superconductor paste has been developed to study the properties of granulated superconductor materials, to observe the percolation effect and to confirm the theory of the conducting mechanism in the superconducting thick films. This paste was also applied to make a superconducting planar transformer. Due to high T c and advantageous current density properties the base of the paste was chosen to be of Bi(Pb)SrCaCuO system. For contacts a conventional Ag/Pt paste was used. The critical temperature of the samples were between 110 K and 115 K depending on the printed layer thickness. The critical current density at the boiling temperature of the liquid He- was between 200-300 A/cm 2 . The R(T) and V(I) functions were measured with different parameters. The results of the measurements have confirmed the theory of conducting mechanism in the material. The percolation structure model has been built and described. As an application, a superconducting planar thick film transformer was planned and produced. Ten windings of the transformer were printed on one side of the alumina substrate and one winding was printed on the other side. The coupling between the two sides was possible through the substrate. The samples did not need special drying and firing parameters. After the preparation, the properties of the transformer were measured. The efficiency and the losses were determined. Finally, some fundamental advantages and problems of the process were discussed

Possible influence of the ferromagnetic/antiferromagnetic interface on the effective critical behavior of bilayers based on La{sub 1−x}Sr{sub x}MnO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Álvarez Miño, Lucero, E-mail: lalvarezm@unal.edu.co [Universidad Nacional de Colombia, Sede Manizales, Cra. 27 #64-60, Manizales (Colombia); Grupo de Superconductividad y Nuevos Materiales, Universidad Nacional de Colombia, Sede Bogotá, Avenida Carrera 30 #45, Bogotá (Colombia); Mulcué-Nieto, Luis Fernando, E-mail: lfmulcuen@unal.edu.co [Laboratorio de Magnetismo y Materiales Avanzados, Facultad de Ciencias Exactas y Naturales, Universidad Nacional de Colombia, Sede Manizales, Cra. 27 #64-60, Manizales (Colombia)

2015-03-01

In this work, the effective critical exponent of the spontaneous magnetization, β, and the transition temperature, T{sub C}, were calculated from magnetization measurements of three bilayers based on La{sub 1−x}Sr{sub x}MnO{sub 3} (LSMO). The bilayers structure is a ferromagnetic (FM) LSMO film grown on top of an antiferromagnetic (AF) LSMO film. The value of the antiferromagnetic film thickness was kept the same for the three samples, while the ferromagnetic film had different thickness for each bilayer. Applying a method of calculation based on a linear superposition of the magnetization close to the critical temperature, a β value corresponding to the 3D Ising model was found for the bilayer with the thinnest ferromagnetic film. This result, and the other obtained values are explained taking into account the possible influence of the FM/AF interface on the magnetic and crystal orderings. - Highlights: • The critical exponent β of three LSMO bilayers was determined. • Two bilayers with the thinner FM layer have very similar transition temperature. • Two bilayers with the thinner FM layer have very similar width values. • We have found values of β of the 3D Ising model. • Interface also seems to be responsible for some structural disorder.

Ferromagnetic resonance linewidth and damping in perpendicular-anisotropy magnetic multilayers thin films

Science.gov (United States)

Beaujour, Jean-Marc

2010-03-01

Transition metal ferromagnetic films with perpendicular magnetic anisotropy (PMA) have ferromagnetic resonance (FMR) linewidths that are one order of magnitude larger than soft magnetic materials, such as pure iron (Fe) and permalloy (NiFe) thin films. We have conducted systematic studies of a variety of thin film materials with perpendicular magnetic anisotropy to investigate the origin of the enhanced FMR linewidths, including Ni/Co and CoFeB/Co/Ni multilayers. In Ni/Co multilayers the PMA was systematically reduced by irradiation with Helium ions, leading to a transition from out-of-plane to in-plane easy axis with increasing He ion fluence [1,2]. The FMR linewidth depends linearly on frequency for perpendicular applied fields and increases significantly when the magnetization is rotated into the film plane with an applied in-plane magnetic field. Irradiation of the film with Helium ions decreases the PMA and the distribution of PMA parameters, leading to a large reduction in the FMR linewidth for in-plane magnetization. These results suggest that fluctuations in the PMA lead to a large two magnon scattering contribution to the linewidth for in-plane magnetization and establish that the Gilbert damping is enhanced in such materials (α˜0.04, compared to α˜0.002 for pure Fe) [2]. We compare these results to those on CoFeB/Co/Ni and published results on other thin film materials with PMA [e.g., Ref. 3]. [1] D. Stanescu et al., J. Appl. Phys. 103, 07B529 (2008). [2] J-M. L. Beaujour, D. Ravelosona, I. Tudosa, E. Fullerton, and A. D. Kent, Phys. Rev. B RC 80, 180415 (2009). [3] N. Mo, J. Hohlfeld, M. ulIslam, C. S. Brown, E. Girt, P. Krivosik, W. Tong, A. Rebel, and C. E. Patton, Appl. Phys. Lett. 92, 022506 (2008). *Research done in collaboration with: A. D. Kent, New York University, D. Ravelosona, Institut d'Electronique Fondamentale, UMR CNRS 8622, Universit'e Paris Sud, E. E. Fullerton, Center for Magnetic Recording Research, UCSD, and supported by NSF

Thickness dependence of J_c (0) in MgB_2 films

International Nuclear Information System (INIS)

Chen, Yiling; Yang, Can; Jia, Chunyan; Feng, Qingrong; Gan, Zizhao

2016-01-01

Highlights: • A serial of MgB_2 superconducting films from 10 nm to 8 µm have been prepared. • T_c and J_c (5 K, 0 T) of films are high. • J_c (5 K, 0 T) reaches its maximum 2.3 × 10"8 A cm"−"2 for 100 nm films. • The relationship between thickness and J_c has been discussed in detail. - Abstract: MgB_2 superconducting films, whose thicknesses range from 10 nm to 8 µm, have been fabricated on SiC substrates by hybrid physical–chemical vapor deposition (HPCVD) method. It is the first time that the T_c and the J_c of MgB_2 films are studied on such a large scale. It is found that with the increasing of thickness, T_c elevates first and then keeps roughly stable except for some slight fluctuations, while J_c (5 K, 0 T) experiences a sharp increase followed by a relatively slow fall. The maximum J_c (5 K, 0 T) = 2.3 × 10"8 A cm"−"2 is obtained for 100 nm films, which is the experimental evidence for preparing high-quality MgB_2 films by HPCVD method. Thus, this work may provide guidance on choosing the suitable thickness for applications. Meanwhile, the films prepared by us cover ultrathin films, thin films and thick films, so the study on them will bring a comprehensive understanding of MgB_2 films.

Magnetization reversal in ferromagnetic film through solitons by electromagnetic field

International Nuclear Information System (INIS)

Veerakumar, V.; Daniel, M.

2001-07-01

We study the reversal of magnetization in an isotopic ferromagnetic film free from charges by exposing it to a circularly polarized electromagnetic (EM) field. The magnetization excitations are obtained in the form of line and lump solitons of the completely integrable modified KP-II equation which is derived using a reductive perturbation method from the set of coupled Landau-Lifschitz and Maxwell equations. It is observed that when the polarization of the EM-field is reversed followed by a rotation, for every (π)/2-degrees, the magnetization is reversed. (author)

Thickness dependence of the triplet spin-valve effect in superconductor-ferromagnet heterostructures

Energy Technology Data Exchange (ETDEWEB)

Lenk, Daniel; Zdravkov, Vladimir I.; Kehrle, Jan; Obermeier, Guenther; Krug von Nidda, Hans-Albrecht; Mueller, Claus; Horn, Siegfried; Tidecks, Reinhard [Institut fuer Physik, Universitaet Augsburg (Germany); Morari, Roman [Institut fuer Physik, Universitaet Augsburg (Germany); D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Sidorenko, Anatolie S. [D. Ghitsu Institute of Electronic Engineering and Nanotechnologies ASM, Kishinev (Moldova, Republic of); Tagirov, Lenar [Solid State Physics Department, Kazan Federal University (Russian Federation)

2015-07-01

We investigated the triplet spin-valve effect in nanoscale layered S/F{sub 1}/N/F{sub 2}/AF heterostructures with varying F{sub 1}-layer thickness (where S=Nb is a singlet superconducting, F{sub 1}=Cu{sub 41}Ni{sub 59} and F{sub 2}=Co a ferromagnetic, and N a normal-conducting, non-magnetic layer). The theory predicts a long-range, odd-in-frequency triplet component of superconductivity at non-collinear alignment of the magnetizations of F{sub 1} and F{sub 2}. This triplet component exhausts the singlet state and, thus, lowers the superconducting transition temperature, T{sub c}, yielding a global minimum of T{sub c} close to the perpendicular mutual orientations of the magnetizations. We found an oscillating decay of T{sub c} suppression, due to the generation of the triplet component, with increasing F{sub 1} layer thickness, which we discuss in the framework of recent theories.

A Study on the Thickness Measurement of Thin Film by Ultrasonic Wave

International Nuclear Information System (INIS)

Han, Eung Kyo; Lee, Jae Joon; Kim, Jae Yeol

1988-01-01

Recently, it is gradually raised necessity that thickness of thin film is measured accurately and managed in industrial circles and medical world. In this study, regarding to the thickness of film which is in opaque object and is beyond distance resolution capacity, thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measurement results, film thickness which is beyond distance resolution capacity was measured accurately. And within thickness range that don't exist interference, thickness measurement by MEM-ceptrum analysis was impossible

Anomalous size effect in conductivity of Bi films of small thickness

International Nuclear Information System (INIS)

Anopchenko, A.S.; Kashirin, V.Yu.; Komnik, Yu.F.

1995-01-01

Experimental data are obtained at helium temperature, which describe the kinetic properties (conductivity, magnetoresistance and Hall coefficient) of Bi films whose thicknesses are within 100-500 A. The small-thickness Bi films display an anomalous size effect- the growing conductivity at decreasing thickness, and pronounced quantum interference effects - weak electron localization and enhancing electron-electron interaction in a disordered system. The information derived on the kinetic properties of the films is used to identify the character of the changes in the electron and hole concentrations and mobilities with a decreasing thickness. The isotropy of the properties in the films plane due to the axial texture has permitted us to use the equations for a conductor with two types of charge carriers. The used kinetic characteristics correctly take into account the contribution of the quantum corrections related to quantum interference. It is found that the concentration of the charge carries increases appreciably (by about two orders of magnitude) as the film thickness decreases to 100 A, which determines the anomalous size effect in the conductivity of the films

Density functional study of ferromagnetism in alkali metal thin films

Indian Academy of Sciences (India)

thickness uniform jellium model (UJM), and it is argued that within LSDA or GGA, alkali metal thin films cannot be claimed to have an FM ground state. Relevance of these results to the experiments on transition metal-doped alkali metal thin films ...

Hexaferrite multiferroics: from bulk to thick films

Science.gov (United States)

Koutzarova, T.; Ghelev, Ch; Peneva, P.; Georgieva, B.; Kolev, S.; Vertruyen, B.; Closset, R.

2018-03-01

We report studies of the structural and microstructural properties of Sr3Co2Fe24O41 in bulk form and as thick films. The precursor powders for the bulk form were prepared following the sol-gel auto-combustion method. The prepared pellets were synthesized at 1200 °C to produce Sr3Co2Fe24O41. The XRD spectra of the bulks showed the characteristic peaks corresponding to the Z-type hexaferrite structure as a main phase and second phases of CoFe2O4 and Sr3Fe2O7-x. The microstructure analysis of the cross-section of the bulk pellets revealed a hexagonal sheet structure. Large areas were observed of packages of hexagonal sheets where the separate hexagonal particles were ordered along the c axis. Sr3Co2Fe24O41 thick films were deposited from a suspension containing the Sr3Co2Fe24O41 powder. The microstructural analysis of the thick films showed that the particles had the perfect hexagonal shape typical for hexaferrites.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

Energy Technology Data Exchange (ETDEWEB)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C., E-mail: gadkari@barc.gov.in

2016-02-21

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the <200> direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Effects of film thickness on scintillation characteristics of columnar CsI:Tl films exposed to high gamma radiation doses

International Nuclear Information System (INIS)

Shinde, Seema; Singh, S.G.; Sen, S.; Gadkari, S.C.

2016-01-01

Oriented columnar films of Tl doped CsI (CsI:Tl) of varying thicknesses from 50 µm to 1000 µm have been deposited on silica glass substrates by a thermal evaporation technique. The SEM micrographs confirmed the columnar structure of the film while the powder X-ray diffraction pattern recorded for the films revealed a preferred orientation of the grown columns along the direction. Effects of high energy gamma exposure up to 1000 Gy on luminescence properties of the films were investigated. Results of radio-luminescence, photo-luminescence and scintillation studies on the films are compared with those of a CsI:Tl single crystal with similar thickness. A possible correlation between the film thicknesses and radiation damage in films has been observed. - Highlights: • CsI:Tl films of different thicknesses deposited for γ and α detection. • Pulse-height spectra found to degrade with increasing thickness. • Radiation damage is found more in films than single crystal of comparable thickness. • Detection efficiency increases for γ while it is invariant for α beyond 50 µm.

Defect mediated reversible ferromagnetism in Co and Mn doped zinc oxide epitaxial films

Energy Technology Data Exchange (ETDEWEB)

Mal, Siddhartha; Nori, Sudhakar; Narayan, J. [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Mula, Suhrit [Department of Material Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Department of Metallurgical and Materials Engineering, National Institute of Technology, Rourkela 769008 (India); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

2012-12-01

We have introduced defects in ZnO (undoped and doped with Co and Mn) epitaxial thin films using laser irradiation from nanosecond laser pulses and thermal annealing in oxygen ambient. In contrast to the as grown samples, the laser irradiated films show a significant increase in conductivity, enhancement in UV emission, while maintaining the same wurtzite crystal structure. Room-temperature ferromagnetism (RTFM) is observed in laser-irradiated samples, which increased with the number of laser pulses up to a certain value where magnetic moment saturates. The induced ferromagnetism as well as the enhanced electrical conductivity can be reversed with thermal annealing in oxygen ambient. The magnetization in Co and Mn doped films was found to be strong function of growth conditions and defect concentration. X-ray diffraction and optical absorption experiments suggested a 2+ valance state and tetrahedral coordination for both Co and Mn ions. There is a simultaneous increase in n-type electrical conductivity with the number of laser pulses and continue to exhibit semiconducting behavior in both undoped and doped films. The saturation magnetization was found to be 0.08 {mu}{sub B}/Co and 0.05 {mu}{sub B}/Mn, much lower than 3.0 {mu}{sub B}/Co and 5.0 {mu}{sub B}/Mn, indicating the prominent role of intrinsic defects in RTFM with some contribution from Co{sup 2+}-oxygen vacancy complexes. We propose a unified mechanism based upon introduction of intrinsic defects to explain RTFM and n-type conductivity enhancements during pulsed laser and thermal annealing.

The effect of bubble acceleration on the liquid film thickness in micro tubes

Energy Technology Data Exchange (ETDEWEB)

Han, Youngbae, E-mail: bhan@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan); Shikazono, Naoki, E-mail: shika@feslab.t.u-tokyo.ac.j [Department of Mechanical Engineering, University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656 (Japan)

2010-08-15

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

The effect of bubble acceleration on the liquid film thickness in micro tubes

International Nuclear Information System (INIS)

Han, Youngbae; Shikazono, Naoki

2010-01-01

Liquid film thickness is an important parameter for predicting boiling heat transfer in micro tubes. In the previous study (), liquid film thickness under the steady condition was investigated and an empirical correlation for the initial liquid film thickness based on capillary number, Reynolds number and Weber number was proposed. However, under flow boiling conditions, bubble velocity is not constant but accelerated due to evaporation. It is necessary to consider this bubble acceleration effect on the liquid film thickness, since it affects viscous, surface tension and inertia forces in the momentum equation. In addition, viscous boundary layer develops, and it may also affect the liquid film thickness. In the present study, the effect of bubble acceleration is investigated. Laser focus displacement meter is used to measure the liquid film thickness. Ethanol, water and FC-40 are used as working fluids. Circular tubes with three different inner diameters, D = 0.5, 0.7 and 1.0 mm, are used. The increase of liquid film thickness with capillary number is restricted by the bubble acceleration. Finally, an empirical correlation is proposed for the liquid film thickness of accelerated flows in terms of capillary number and Bond number based on the bubble acceleration.

Determination of magnetic properties of multilayer metallic thin films

International Nuclear Information System (INIS)

Birlikseven, C.

2000-01-01

In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the experimental results to the theoretical models, effective magnetization and angles between the ferromagnetic layers were calculated. The correspondence between magnetization and magnetoresistance was evaluated. To see the effect of anisotropic magnetoresistance in the magnetoresistance measurements, a new experimental set-up was build and measurements were taken in this set-up. A series of soft permalloy thin films were made, and temperature dependent resistivity, magnetoresistance, anisotropic magnetoresistance and magnetization measurements were taken

Film thickness dependence of phase separation and dewetting behaviors in PMMA/SAN blend films.

Science.gov (United States)

You, Jichun; Liao, Yonggui; Men, Yongfeng; Shi, Tongfei; An, Lijia

2010-09-21

Film thickness dependence of complex behaviors coupled by phase separation and dewetting in blend [poly(methyl methacrylate) (PMMA) and poly(styrene-ran-acrylonitrile) (SAN)] films on silicon oxide substrate at 175 °C was investigated by grazing incidence ultrasmall-angle X-ray scattering (GIUSAX) and in situ atomic force microscopy (AFM). It was found that the dewetting pathway was under the control of the parameter U(q0)/E, which described the initial amplitude of the surface undulation and original thickness of film, respectively. Furthermore, our results showed that interplay between phase separation and dewetting depended crucially on film thickness. Three mechanisms including dewetting-phase separation/wetting, dewetting/wetting-phase separation, and phase separation/wetting-pseudodewetting were discussed in detail. In conclusion, it is relative rates of phase separation and dewetting that dominate the interplay between them.

Relaxation in Thin Polymer Films Mapped across the Film Thickness by Astigmatic Single-Molecule Imaging

KAUST Repository

Oba, Tatsuya

2012-06-19

We have studied relaxation processes in thin supported films of poly(methyl acrylate) at the temperature corresponding to 13 K above the glass transition by monitoring the reorientation of single perylenediimide molecules doped into the films. The axial position of the dye molecules across the thickness of the film was determined with a resolution of 12 nm by analyzing astigmatic fluorescence images. The average relaxation times of the rotating molecules do not depend on the overall thickness of the film between 20 and 110 nm. The relaxation times also do not show any dependence on the axial position within the films for the film thickness between 70 and 110 nm. In addition to the rotating molecules we observed a fraction of spatially diffusing molecules and completely immobile molecules. These molecules indicate the presence of thin (<5 nm) high-mobility surface layer and low-mobility layer at the interface with the substrate. (Figure presented) © 2012 American Chemical Society.

Effect of antiferromagnetic interfacial coupling on spin-wave resonance frequency of multi-layer film

Energy Technology Data Exchange (ETDEWEB)

Qiu, Rong-ke, E-mail: rkqiu@163.com; Cai, Wei

2017-08-15

Highlights: • A quantum approach is developed to study the SWR of a bicomponent multi-layer films. • The comparison of the SWR in films with FM and AFM interfacial coupling has been made. • The present results show the method to enhance and adjust the SWR frequency of films. - Abstract: We investigate the spin-wave resonance (SWR) frequency in a bicomponent bilayer and triple-layer films with antiferromagnetic or ferromagnetic interfacial couplings, as function of interfacial coupling, surface anisotropy, interface anisotropy, thickness and external magnetic field, using the linear spin-wave approximation and Green’s function technique. The microwave properties for multi-layer magnetic film with antiferromagnetic interfacial coupling is different from those for multi-layer magnetic film with ferromagnetic interfacial coupling. For the bilayer film with antiferromagnetic interfacial couplings, as the lower (upper) surface anisotropy increases, only the SWR frequencies of the odd (even) number modes increase. The lower (upper) surface anisotropy does not affect the SWR frequencies of the even (odd) number modes{sub .} For the multi-layer film with antiferromagnetic interfacial coupling, the SWR frequency of modes m = 1, 3 and 4 decreases while that of mode m = 2 increases with increasing thickness of the film within a proper parameter region. The present results could be useful in enhancing our fundamental understanding and show the method to enhance and adjust the SWR frequency of bicomponent multi-layer magnetic films with antiferromagnetic or ferromagnetic interfacial coupling.

MEMS-based thick film PZT vibrational energy harvester

DEFF Research Database (Denmark)

Lei, Anders; Xu, Ruichao; Thyssen, Anders

2011-01-01

We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechan......We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using...... a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz....

Nanocrystalline soft ferromagnetic Ni-Co-P thin film on Al alloy by low temperature electroless deposition

International Nuclear Information System (INIS)

Aal, A. Abdel; Shaaban, A.; Hamid, Z. Abdel

2008-01-01

Soft ferromagnetic ternary Ni-Co-P films were deposited onto Al 6061 alloy from low temperature Ni-Co-P electroless plating bath. The effect of deposition parameters, such as time and pH, on the plating rate of the deposit were examined. The results showed that the plating rate is a function of pH bath and the highest coating thickness can be obtained at pH value from 8 to10. The surface morphology, phase structure and the magnetic properties of the prepared films have been investigated using scanning electron microscopy (SEM), X-ray diffraction analysis (XRD) and vibrating magnetometer device (VMD), respectively. The deposit obtained at optimum conditions showed compact and smooth with nodular grains structure and exhibited high magnetic moments and low coercivety. Potentiodynamic polarization corrosion tests were used to study the general corrosion behavior of Al alloys, Ni-P and Ni-Co-P coatings in 3.5% NaCl solution. It was found that Ni-Co-P coated alloy demonstrated higher corrosion resistance than Ni-P coating containing same percent of P due to the Co addition. The Ni-Co-P coating with a combination of high corrosion resistance, high hardness and excellent magnetic properties would be expected to enlarge the applications of the aluminum alloys

Investigation of top electrode for PZT thick films based MEMS sensors

DEFF Research Database (Denmark)

Hindrichsen, Christian Carstensen; Pedersen, Thomas; Kristiansen, Paw T.

2010-01-01

In this work processing of screen printed piezoelectric PZT thick films on silicon substrates is investigated for use in future MEMS devices. E-beam evaporated Al and Pt are patterned on PZT as a top electrode using a lift-off process with a line width down to 3 mu m. Three test structures are used...... to investigate the optimal thickness of the top electrode, the degradation of the piezoelectric properties of the PZT film in absence of a diffusion barrier layer and finally how to fabricate electrical interconnects down the edge of the PZT thick film. The roughness of the PZT is found to have a strong...... influence on the conductance of the top electrode influencing the optimal top electrode thickness. A 100 nm thick top electrode on the PZT thick film with a surface roughness of 273 nm has a 4.5 times higher resistance compared to a similar wire on a planar SiO2 surface which has a surface roughness of less...

Magnetic excitations in ferromagnetic semiconductors

International Nuclear Information System (INIS)

Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

2009-01-01

Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

Miniaturized, Planar Ion-selective Electrodes Fabricated by Means of Thick-film Technology

Directory of Open Access Journals (Sweden)

Robert Koncki

2006-04-01

Full Text Available Various planar technologies are employed for developing solid-state sensorshaving low cost, small size and high reproducibility; thin- and thick-film technologies aremost suitable for such productions. Screen-printing is especially suitable due to itssimplicity, low-cost, high reproducibility and efficiency in large-scale production. Thistechnology enables the deposition of a thick layer and allows precise pattern control.Moreover, this is a highly economic technology, saving large amounts of the used inks. Inthe course of repetitions of the film-deposition procedure there is no waste of material dueto additivity of this thick-film technology. Finally, the thick films can be easily and quicklydeposited on inexpensive substrates. In this contribution, thick-film ion-selective electrodesbased on ionophores as well as crystalline ion-selective materials dedicated forpotentiometric measurements are demonstrated. Analytical parameters of these sensors arecomparable with those reported for conventional potentiometric electrodes. All mentionedthick-film strip electrodes have been totally fabricated in only one, fully automated thick-film technology, without any additional manual, chemical or electrochemical steps. In allcases simple, inexpensive, commercially available materials, i.e. flexible, plastic substratesand easily cured polymer-based pastes were used.

Spin Currents and Spin Orbit Torques in Ferromagnets and Antiferromagnets

Science.gov (United States)

Hung, Yu-Ming

This thesis focuses on the interactions of spin currents and materials with magnetic order, e.g., ferromagnetic and antiferromagnetic thin films. The spin current is generated in two ways. First by spin-polarized conduction-electrons associated with the spin Hall effect in heavy metals (HMs) and, second, by exciting spin-waves in ferrimagnetic insulators using a microwave frequency magnetic field. A conduction-electron spin current can be generated by spin-orbit coupling in a heavy non-magnetic metal and transfer its spin angular momentum to a ferromagnet, providing a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. The torques on the magnetization are known as spin-orbit torques (SOT). In the first part of my thesis project I investigated and contrasted the quasistatic (slowly swept current) and pulsed current-induced switching characteristics of micrometer scale Hall crosses consisting of very thin (magnetized CoFeB layers on beta-Ta. While complete magnetization reversal occurs at a threshold current density in the quasistatic case, pulses with short duration (≤10 ns) and larger amplitude (≃10 times the quasistatic threshold current) lead to only partial magnetization reversal and domain formation. The partial reversal is associated with the limited time for reversed domain expansion during the pulse. The second part of my thesis project studies and considers applications of SOT-driven domain wall (DW) motion in a perpendicularly magnetized ultrathin ferromagnet sandwiched between a heavy metal and an oxide. My experiment results demonstrate that the DW motion can be explained by a combination of the spin Hall effect, which generates a SOT, and Dzyaloshinskii-Moriya interaction, which stabilizes chiral Neel-type DW. Based on SOT-driven DW motion and magnetic coupling between electrically isolated ferromagnetic elements, I proposed a new type of spin logic devices. I then

Thickness dependence of dynamic and static magnetic properties of pulsed laser deposited La{sub 0.7}Sr{sub 0.3}MnO{sub 3} films on SrTiO{sub 3}(001)

Energy Technology Data Exchange (ETDEWEB)

Monsen, Åsmund [Department of Physics, NTNU, 7491 Trondheim (Norway); Boschker, Jos E. [Department of Electronics and Telecommunications, NTNU, 7491 Trondheim (Norway); Macià, Ferran [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Wells, Justin W. [Department of Physics, NTNU, 7491 Trondheim (Norway); Nordblad, Per [Department of Engineering Sciences, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Kent, Andrew D. [Department of Physics, New York University, 4 Washington Place, New York, NY 10003 (United States); Mathieu, Roland [Department of Engineering Sciences, Uppsala University, Box 534, SE-751 21 Uppsala (Sweden); Tybell, Thomas [Department of Electronics and Telecommunications, NTNU, 7491 Trondheim (Norway); Wahlström, Erik, E-mail: erik.wahlstrom@ntnu.no [Department of Physics, NTNU, 7491 Trondheim (Norway)

2014-11-15

We present a comprehensive study of the thickness dependence of static and magneto-dynamic magnetic properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3}. Epitaxial pulsed laser deposited La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3}(001) thin films in the range from 3 unit cell (uc) to 40 uc (1.2–16 nm) have been investigated through ferromagnetic resonance (FMR) spectroscopy and SQUID magnetometry at variable temperature. Magnetodynamically, three different thickness, d, regimes are identified: 20 uc ≲d uc where the system is bulk like, a transition region 8 uc ≤d≲20 uc where the FMR linewidth and the position depend on thickness and d=6 uc which displays significantly altered magnetodynamic properties, while still displaying bulk magnetization. Magnetization and FMR measurements are consistent with a nonmagnetic volume corresponding to ∼4 uc. We observe a reduction of Curie temperature (T{sub C}) with decreasing thickness, which is coherent with a mean field model description. The reduced ordering temperature also accounts for the thickness dependence of the magnetic anisotropy constants and resonance fields. The damping of the system is strongly thickness dependent, and is for thin films dominated by thickness dependent anisotropies, yielding both a strong two-magnon scattering close to T{sub c} and a low temperature broadening. For the bulk like samples a large part of the broadening can be linked to spread in magnetic anisotropies attributed to crystal imperfections/domain boundaries of the bulk like film. - Highlights: • Thickness dependent magnetodynamic anisotropy constants and line-widths have been measured. • For thicknesses >8nm the films are bulk-like. • Thin film line-widths are dominated by surface/interface imperfections. • Thick film line-widths are dominated by crystal imperfections/domain boundaries.

Thick-film effects in the oxidation and hydriding of zirconium alloys

International Nuclear Information System (INIS)

Johnson, A.B. Jr.

1989-08-01

One of the fundamental discoveries involving radiation effects on the oxidation of Zircaloy in low-oxygen aqueous environments is the influence of thick oxide films. Zircaloy oxidation rates in low-oxygen (hydrogen-rich) coolants initially proceed at relatively low rates, often almost uninfluenced by radiation. Marked upturns in oxidation rate have signaled the onset of radiation effects. The radiation effects appear to correlate with a threshold oxide thickness. Results of the test reactor experiments lead to formulation of the Thick-Film Hypothesis: beyond a threshold oxide thickness, radiolysis of water that infiltrates oxide cracks and pores controls the oxidation rate; radiation creates microenvironments inside the oxide film, producing highly oxidizing conditions, that are no longer suppressed by the coolant-borne hydrogen. Upturns in oxidation rate on high-exposure Zircaloy pressure tubes add confirmatory evidence for the thick-film effect. This paper summarizes the early evidence for thick-film behavior, including oxidation and hydriding trends, updates confirmatory evidence from Zircaloy reactor and fuel assembly components, and highlights other observations from the test reactor series that have potential fundamental significance to explanations of radiation effects on Zircaloy. 23 refs., 10 figs

A study on the evolution of dielectric function of ZnO thin films with decreasing film thickness

International Nuclear Information System (INIS)

Li, X. D.; Chen, T. P.; Liu, P.; Liu, Y.; Liu, Z.; Leong, K. C.

2014-01-01

Dielectric function, band gap, and exciton binding energies of ultrathin ZnO films as a function of film thickness have been obtained with spectroscopic ellipsometry. As the film thickness decreases, both real (ε 1 ) and imaginary (ε 2 ) parts of the dielectric function decrease significantly, and ε 2 shows a blue shift. The film thickness dependence of the dielectric function is shown related to the changes in the interband absorption, discrete-exciton absorption, and continuum-exciton absorption, which can be attributed to the quantum confinement effect on both the band gap and exciton binding energies

In-situ XMCD evaluation of ferromagnetic state at FeRh thin film surface induced by 1 keV Ar ion beam irradiation and annealing

Energy Technology Data Exchange (ETDEWEB)

Matsui, T. [Research Organization for the 21st Century, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Aikoh, K. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan); Sakamaki, M.; Amemiya, K. [High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki 305-0801 (Japan); Iwase, A. [Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8531 (Japan)

2015-12-15

Surface ferromagnetic state of FeRh thin films irradiated with 1 keV Ar ion-beam has been investigated by using soft X-ray Magnetic Circular Dichroism (XMCD). It was revealed that the Fe atoms of the samples were strongly spin-polarized after Ar ion-beam irradiation. Due to its small penetration depth, 1 keV Ar ion-beam irradiation can modify the magnetic state at subsurface of the samples. In accordance with the XMCD sum rule analysis, the main component of the irradiation induced ferromagnetism at the FeRh film surface was to be effective spin magnetic moment, and not to be orbital moment. We also confirmed that the surface ferromagnetic state could be produced by thermal annealing of the excessively ion irradiated paramagnetic subsurface of the FeRh thin films. This novel magnetic modification technique by using ion irradiation and subsequent annealing can be a potential tool to control the surface magnetic state of FeRh thin films.

Structural, transport and microwave properties of 123/sapphire films: Thickness effect

Energy Technology Data Exchange (ETDEWEB)

Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D. [Institute of Thermophysics, Novosibirsk (Russian Federation)] [and others

1994-12-31

The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.

The effects of film thickness on the electrical, optical, and structural properties of cylindrical, rotating, magnetron-sputtered ITO films

Science.gov (United States)

Kim, Jae-Ho; Seong, Tae-Yeon; Ahn, Kyung-Jun; Chung, Kwun-Bum; Seok, Hae-Jun; Seo, Hyeong-Jin; Kim, Han-Ki

2018-05-01

We report the characteristics of Sn-doped In2O3 (ITO) films intended for use as transparent conducting electrodes; the films were prepared via a five-generation, in-line type, cylindrical, rotating magnetron sputtering (CRMS) system as a function of film thickness. By using a rotating cylindrical ITO target with high usage (∼80%), we prepared high conductivity, transparent ITO films on five-generation size glass. The effects of film thickness on the electrical, optical, morphological, and structural properties of CRMS-grown ITO films are investigated in detail to correlate the thickness and performance of ITO films. The preferred orientation changed from the (2 2 2) to the (4 0 0) plane with increasing thickness of ITO is attributed to the stability of the (4 0 0) plane against resputtering during the CRMS process. Based on X-ray diffraction, surface field emission scanning electron microscopy, and cross-sectional transmission electron microscopy, we suggest a possible mechanism to explain the preferred orientation and effects of film thickness on the performance of CRMS-grown ITO films.

Imaging and thickness measurement of amorphous intergranular films using TEM

International Nuclear Information System (INIS)

MacLaren, I.

2004-01-01

Fresnel fringe analysis is shown to be unreliable for grain boundaries in yttrium-doped alumina: the determined thicknesses do not agree well with those measured from high resolution transmission electron microscopy (HRTEM), the asymmetry between under- and overfocus is very large, and Fresnel fringes are sometimes shown at boundaries which contain no amorphous film. An alternative approach to the analysis of HRTEM images of grain boundary films is demonstrated: Fourier filtering is used to remove the lattice fringes from the image thereby significantly enhancing the visibility of the intergranular films. The apparent film thickness shows a discrepancy between measurements from the original HRTEM image and the filtered image. It was shown that fringe delocalisation and diffuseness of the amorphous/crystalline interfaces will lead to a significant underestimate of the thickness in unprocessed HRTEM images. In contrast to this, the average thickness can be much more accurately measured from the Fourier-filtered image, provided the boundary is oriented accurately edge-on

Room temperature ferromagnetism in undoped and Ni doped In{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Krishna, N. Sai; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana; Krishnamoorthi, C.; Begam, M. Rigana [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore – 632014 (India); Amarendra, G. [Materials Science Group, Indira Gandhi Centre for Atomic Research, Kalpakkam – 603102 (India); UGC-DAE-CSR, Kalpakkam Node, Kokilamedu-603104 (India)

2015-06-24

Undoped and Ni (5 at.%) doped In{sub 2}O{sub 3} thin films were deposited on glass substrate using electron beam evaporation technique and Ni doped In{sub 2}O{sub 3} thin films were annealed at 450 oC. A systematic study was carried out on the structural, chemical and magnetic properties of the as deposited and annealed thin films. X-ray diffraction analysis revealed that all the films were cubic in structure and exhibied ferromagnetism at room temperature. The undoped In{sub 2}O{sub 3} thin films exhibited a saturation magnetization of 24.01 emu/cm3. Ni doped In{sub 2}O{sub 3} thin films annealed at 450 oC showed a saturation magnetization of 53.81 emu/cm3.

Fabrication and Characterization of PZT Thick Films for Sensing and Actuation

Directory of Open Access Journals (Sweden)

Kuo-Ching Kuo

2007-04-01

Full Text Available Lead Zirconate Titanate oxide (PZT thick films with thicknesses of up to 10 μmwere developed using a modified sol-gel technique. Usually, the film thickness is less than1 μm by conventional sol-gel processing, while the electrical charge accumulation whichreveals the direct effect of piezoelectricity is proportional to the film thickness and thereforerestricted. Two approaches were adopted to conventional sol-gel processing – precursorconcentration modulation and rapid thermal annealing. A 10 μm thick film was successfullyfabricated by coating 16 times via this technique. The thickness of each coating layer wasabout 0.6 μm and the morphology of the film was dense with a crack-free area as large as 16mm2. In addition, the structure, surface morphology and physical properties werecharacterized by X-ray diffraction (XRD, scanning electron microscopy (SEM and atomicforce microscopy (AFM and electrical performance. The dielectric constant and hysteresisloops were measured as electric characteristics. This study investigates the actuation andsensing performance of the vibrating structures with the piezoelectric thick film. Theactuation tests demonstrated that a 4 mm x 4 mm x 6.5 μm PZT film drove a 40 mm x 7 mmx 0.5 mm silicon beam as an actuator. Additionally, it generated an electrical signal of 60mVpp as a sensor, while vibration was input by a shaker. The frequencies of the first twomodes of the beam were compared with the theoretical values obtained by Euler-Bernoullibeam theory. The linearity of the actuation and sensing tests were also examined.

Thickness-dependent radiative properties of Y-Ba-Cu-O thin films

International Nuclear Information System (INIS)

Phelan, P.E.; Chen, G.; Tien, C.L.

1991-01-01

Some applications of high-temperature superconductors where their thermal radiative behavior is important, such as bolometers, optically-triggered switches and gates, and space-cooled electronics, required the superconductor to be in the form of a very thin film whose radiative behavior cannot be adequately represented by a semi-infinite analysis. Two properties of particular importance are the film absorptance and the combined film/substrate absorptance, which are crucial to the operation of many devices. This paper reports on calculations of the absorptance of superconducting-state Y-Ba-Cu-O films on MgO substrates which suggest that for film thicknesses less than about 50 nm, a decrease in the film thickness leads to an increase in both the film absorptance and the film/substrate absorptance. Furthermore, the film absorptance is maximum at some optimal value of film thickness. Assuming the film to be a smooth, continuous slab with a refractive index equal to that of the bulk Y-Ba-Cu-O is verified, at least in the normal state and for films as thin as 35 nm, by room-temperature reflectance and transmittance measurements

Single-domain versus two-domain configuration in thin ferromagnetic prisms

International Nuclear Information System (INIS)

Pini, Maria Gloria; Politi, Paolo

2007-01-01

Thin ferromagnetic elements in the form of rectangular prisms are theoretically investigated in order to study the transition from single-domain to two-domain state, with changing the in-plane aspect ratio p. We address two main questions: first, how general is the transition; second, how the critical value p c depends on the physical parameters. We use two complementary methods: discrete-lattice calculations and a micromagnetic continuum approach. Ultrathin films do not appear to split in two domains. Instead, thicker films may undergo the above transition. We have used the continuum approach to analyze recent magnetic force microscopy observations in 30nm-thick patterned permalloy elements, finding a good agreement for p c

Thickness dependence of Hall mobility of HWE grown PbTe films

International Nuclear Information System (INIS)

Vaya, P.R.; Majhi, J.; Gopalam, B.S.V.; Dattatreyan, C.

1985-01-01

Thin epitaxial n-PbTe films of various thicknesses are grown on KCl substrates by hot wall epitaxy (HWE) technique. The X-ray, SEM and TEM studies of these films revealed their single crystalline nature. The Hall mobility (μ/sub H/) of these films is measured by Van der Pauw technique and compared with the numerically calculated values of PbTe. It is observed that μ/sub H/ very strongly depends on thickness for thin films but becomes independent of film thickness beyond 5 μm approaching its bulk value. The constant value of Hall coefficient in the temperature range 77 to 300 K show the extrinsic nature of these films. It is also noticed that the rate of increase of mobility with decreasing temperature becomes higher with film thickness. The diffused scattering mobility due to the size effect is calculated and compared with experimental data. A large discrepancy observed between these two is explained on the basis of the residual mobility contribution. The residual mobility is attributed to overall scattering due to grain boundaries, dislocations, defects, cleavage steps, and other surface effects. (author)

Thickness of residual wetting film in liquid-liquid displacement

Science.gov (United States)

Beresnev, Igor; Gaul, William; Vigil, R. Dennis

2011-08-01

Core-annular flow is common in nature, representing, for example, how streams of oil, surrounded by water, move in petroleum reservoirs. Oil, typically a nonwetting fluid, tends to occupy the middle (core) part of a channel, while water forms a surrounding wall-wetting film. What is the thickness of the wetting film? A classic theory has been in existence for nearly 50 years offering a solution, although in a controversial manner, for moving gas bubbles. On the other hand, an acceptable, experimentally verified theory for a body of one liquid flowing in another has not been available. Here we develop a hydrodynamic, testable theory providing an explicit relationship between the thickness of the wetting film and fluid properties for a blob of one fluid moving in another, with neither phase being gas. In its relationship to the capillary number Ca, the thickness of the film is predicted to be proportional to Ca2 at lower Ca and to level off at a constant value of ˜20% the channel radius at higher Ca. The thickness of the film is deduced to be approximately unaffected by the viscosity ratio of the fluids. We have conducted our own laboratory experiments and compiled experimental data from other studies, all of which are mutually consistent and confirm the salient features of the theory. At the same time, the classic law, originally deduced for films surrounding moving gas bubbles but often believed to hold for liquids as well, fails to explain the observations.

Tunneling Conductance in Ferromagnetic Metal/Normal Metal/Spin-Singlet -Wave Ferromagnetic Superconductor Junctions

Directory of Open Access Journals (Sweden)

Hamidreza Emamipour

2013-01-01

Full Text Available In the framework of scattering theory, we study the tunneling conductance in a system including two junctions, ferromagnetic metal/normal metal/ferromagnetic superconductor, where ferromagnetic superconductor is in spin-singlet -wave pairing state. The non-magnetic normal metal is placed in the intermediate layer with the thickness ( which varies from 1 nm to 10000 nm. The interesting result which we have found is the existence of oscillations in conductance curves. The period of oscillations is independent of FS and FN exchange field while it depends on . The obtained results can serve as a useful tool to determine the kind of pairing symmetry in ferromagnetic superconductors.

Comparison of different methods for measuring the passive film thickness on metals

International Nuclear Information System (INIS)

Benoit, Marie; Bataillon, Christian; Gwinner, Benoit; Miserque, Frédéric; Orazem, Mark E.; Sánchez-Sánchez, Carlos M.; Tribollet, Bernard; Vivier, Vincent

2016-01-01

Highlights: • In situ EIS and ex situ XPS were used for the characterization of zirconium oxide films. • The film thicknesses can be obtained from the analysis of a single EIS diagram. • A convenient graphical method to extract film properties is proposed. - Abstract: In situ electrochemical impedance spectroscopy (EIS) and ex situ X-ray photoelectron spectroscopy (XPS) measurements on electrogenerated zirconium oxide films on zirconium (Zr/ZrO_2) were used to quantify the oxide film thickness and resistivity profiles through the oxide. The EIS analysis presented here takes advantage of the high-frequency domain at which the constant-phase element (CPE) behavior of the oxide film reverts to a capacitive response and the Cole-Cole representations of the complex capacitance to extract the high-frequency capacitance of the oxide film without reference to the nature of the time-constant distribution within the oxide film. The film thickness of the ZrO_2 samples measured from the high-frequency capacitance of EIS were in good agreement with the thickness obtained from XPS. Moreover, the EIS analysis presented is based on the use of the integral solution of the power law model, which allows to obtain in one single EIS experiment, both the film thickness and the resistivity profile in the ZrO_2 film. This work suggests a convenient graphical method to extract film properties and serves to validate a key assumption of the power-law model for interpretation of CPE parameters in terms of physical properties.

Theory of in-plane current induced spin torque in metal/ferromagnet bilayers

Science.gov (United States)

Sakanashi, Kohei; Sigrist, Manfred; Chen, Wei

2018-05-01

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin–orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the spin–orbit torque (SOT) induced by in-plane currents, as observed in the normal metal/ferromagnetic metal bilayer thin films. Focusing on the bilayers with a ferromagnet much thinner than its spin diffusion length, such as Pt/Co with  ∼10 nm thickness, our approach addresses simultaneously the two contributions to the SOT, namely the spin-transfer torque (SHE-STT) due to SHE-induced spin injection, and the inverse spin Galvanic effect spin–orbit torque (ISGE-SOT) due to SOC-induced spin accumulation. The SOC produces an effective magnetic field at the interface, hence it modifies the angular momentum conservation expected for the SHE-STT. The SHE-induced spin voltage and the interface spin current are mutually dependent and, hence, are solved in a self-consistent manner. The result suggests that the SHE-STT and ISGE-SOT are of the same order of magnitude, and the spin transport mediated by the quantum well states may be an important mechanism for the experimentally observed rapid variation of the SOT with respect to the thickness of the ferromagnet.

Josephson tunnel junctions with ferromagnetic interlayer

International Nuclear Information System (INIS)

Weides, M.P.

2006-01-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al 2 O 3 tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or π coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, π) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-π Josephson junction. At a certain temperature this 0-π junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum Φ 0 . Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T → 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Josephson tunnel junctions with ferromagnetic interlayer

Energy Technology Data Exchange (ETDEWEB)

Weides, M.P.

2006-07-01

Superconductivity and ferromagnetism are well-known physical properties of solid states that have been widely studied and long thought about as antagonistic phenomena due to difference in spin ordering. It turns out that the combination of both superconductor and ferromagnet leads to a very rich and interesting physics. One particular example, the phase oscillations of the superconducting order parameter inside the ferromagnet, will play a major role for the devices discussed in this work. In this thesis, I present Josephson junctions with a thin Al{sub 2}O{sub 3} tunnel barrier and a ferromagnetic interlayer, i.e. superconductor-insulator-ferromagnet-superconductor (SIFS) stacks. The fabrication of junctions was optimized regarding the insulation of electrodes and the homogeneity of the current transport. The junctions were either in the 0 or {pi} coupled ground state, depending on the thickness of the ferromagnetic layer and on temperature. The influence of ferromagnetic layer thickness on the transport properties and the coupling (0, {pi}) of SIFS tunnel junctions was studied. Furthermore, using a stepped ferromagnetic layer with well-chosen thicknesses, I obtained the so-called 0-{pi} Josephson junction. At a certain temperature this 0-{pi} junction can be made perfectly symmetric. In this case the ground state corresponds to a vortex of supercurrent creating a magnetic flux which is a fraction of the magnetic flux quantum {phi}{sub 0}. Such structures allow to study the physics of fractional vortices and to build various electronic circuits based on them. The SIFS junctions presented here have an exponentially vanishing damping at T {yields} 0. The SIFS technology developed within the framework of this work may be used to construct classical and quantum devices such as oscillators, memory cells and qubits. (orig.)

Application of β plastic film thickness gauge in automatic production of agricultural film

International Nuclear Information System (INIS)

Liu Longzhi; Guo Juhao

1996-01-01

The author briefly explains the importance of agricultural film at home, and mainly explains the measuring principles of plastic film thickness, the design of β detector, the temperature compensation technology and the design of automatic control device

The determination of the pressure-viscosity coefficient of a lubricant through an accurate film thickness formula and accurate film thickness measurements : part 2 : high L values

NARCIS (Netherlands)

Leeuwen, van H.J.

2011-01-01

The pressure-viscosity coefficient of a traction fluid is determined by fitting calculation results on accurate film thickness measurements, obtained at different speeds, loads, and temperatures. Through experiments, covering a range of 5.6 film thickness values are

Ferromagnetism carried by highly delocalized hybrid states in Sc-doped ZnO thin films

KAUST Repository

Benali Kanoun, Mohammed

2012-05-29

We present first-principles results for Sc-doped ZnOthin films. Neighboring Sc atoms in the surface and/or subsurface layers are found to be coupled ferromagnetically, where only two of the possible configurations induce spin polarization. In the first configuration, the polarization is carried by the Sc d states as expected for transition metaldoping. However, there is a second configuration which is energetically favorable. It is governed by polarized hybrid states of the Zns, O p, and Sc d orbitals. Such highly delocalized states can be an important ingredient for understanding the magnetism of dopedZnOthin films.

Angular multiplexing holograms of four images recorded on photopolymer films with recording-film-thickness-dependent holographic characteristics

Science.gov (United States)

Osabe, Keiichi; Kawai, Kotaro

2017-03-01

In this study, angular multiplexing hologram recording photopolymer films were studied experimentally. The films contained acrylamide as a monomer, eosin Y as a sensitizer, and triethanolamine as a promoter in a polyvinyl alcohol matrix. In order to determine the appropriate thickness of the photopolymer films for angular multiplexing, photopolymer films with thicknesses of 29-503 μm were exposed to two intersecting beams of a YVO laser at a wavelength of 532 nm to form a holographic grating with a spatial frequency of 653 line/mm. The diffraction efficiencies as a function of the incident angle of reconstruction were measured. A narrow angular bandwidth and high diffraction efficiency are required for angular multiplexing; hence, we define the Q value, which is the diffraction efficiency divided by half the bandwidth. The Q value of the films depended on the thickness of the films, and was calculated based on the measured diffraction efficiencies. The Q value of a 297-μm-thick film was the highest of the all films. Therefore, the angular multiplexing experiments were conducted using 300-μm-thick films. In the angular multiplexing experiments, the object beam transmitted by a square aperture was focused by a Fourier transform lens and interfered with a reference beam. The maximum order of angular multiplexing was four. The signal intensity that corresponds to the squared-aperture transmission and the noise intensity that corresponds to transmission without the square aperture were measured. The signal intensities decreased as the order of angular multiplexing increased, and the noise intensities were not dependent on the order of angular multiplexing.

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Science.gov (United States)

Marr, Isabella; Reiß, Sebastian; Hagen, Gunter; Moos, Ralf

2011-01-01

Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers. PMID:22164042

Planar Zeolite Film-Based Potentiometric Gas Sensors Manufactured by a Combined Thick-Film and Electroplating Technique

Directory of Open Access Journals (Sweden)

Gunter Hagen

2011-08-01

Full Text Available Zeolites are promising materials in the field of gas sensors. In this technology-oriented paper, a planar setup for potentiometric hydrocarbon and hydrogen gas sensors using zeolites as ionic sodium conductors is presented, in which the Pt-loaded Na-ZSM-5 zeolite is applied using a thick-film technique between two interdigitated gold electrodes and one of them is selectively covered for the first time by an electroplated chromium oxide film. The influence of the sensor temperature, the type of hydrocarbons, the zeolite film thickness, and the chromium oxide film thickness is investigated. The influence of the zeolite on the sensor response is briefly discussed in the light of studies dealing with zeolites as selectivity-enhancing cover layers.

Influence of film thickness on structural, optical, and electrical properties of spray deposited antimony doped SnO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yadav, Abhijit A., E-mail: aay_physics@yahoo.co.in

2015-09-30

Transparent conducting antimony doped SnO{sub 2} thin films with varying thickness were deposited by chemical spray pyrolysis technique from non-aqueous solvent Propan-2-ol. The effect of film thickness on the properties of antimony doped SnO{sub 2} thin films have been studied. X-ray diffraction measurements showed tetragonal crystal structure of as-deposited antimony doped SnO{sub 2} films irrespective of film thickness. The surface morphology of antimony doped SnO{sub 2} thin film is spherical with the continuous distribution of grains. Electrical and optical properties were investigated by Hall Effect and optical measurements. The average optical transmittance of films decreased from 89% to 73% within the visible range (350–850 nm) with increase in film thickness. The minimum value of sheet resistance observed is 4.81 Ω/cm{sup 2}. The lowest resistivity found is 3.76 × 10{sup −4} Ω cm at 660 nm film thickness. - Highlights: • Effect of film thickness on the properties of antimony doped SnO{sub 2} thin films • Crystalline size in the range of 34–37 nm • Average transmittance decreased from 89% to 73% in the visible region. • Minimum sheet resistance of 4.81 Ω/cm{sup 2} • Lowest resistivity is found to be 3.76 × 10{sup −4} Ω cm at 660 nm film thickness.

Screen-printed piezoceramic thick films for miniaturised devices

DEFF Research Database (Denmark)

Lou-Moeller, R.; Hindrichsen, Christian Carstensen; Thamdrup, Lasse Højlund

2007-01-01

machining. On the other hand, the process of screen printing thick films involves potential problems of thermal matching and chemical compatibility at the processing temperatures between the functional film, the substrate and the electrodes. As an example of such a miniaturised device, a MEMS accelerometer...

Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

Energy Technology Data Exchange (ETDEWEB)

Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

2009-03-15

Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

KAUST Repository

Roqan, Iman S.

2015-02-21

We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

Obtaining strong ferromagnetism in diluted Gd-doped ZnO thin films through controlled Gd-defect complexes

KAUST Repository

Roqan, Iman S.; Venkatesh, S.; Zhang, Z.; Hussain, S.; Bantounas, Ioannis; Franklin, J. B.; Flemban, Tahani H.; Zou, B.; Lee, J.-S.; Schwingenschlö gl, Udo; Petrov, P. K.; Ryan, M. P.; Alford, N. M.

2015-01-01

We demonstrate the fabrication of reproducible long-range ferromagnetism (FM) in highly crystalline GdxZn1-xO thin films by controlling the defects. Films are grown on lattice-matched substrates by pulsed laser deposition at low oxygen pressures (≤25 mTorr) and low Gd concentrations (x ≤ 0.009). These films feature strong FM (10 μB per Gd atom) at room temperature. While films deposited at higher oxygen pressure do not exhibit FM, FM is recovered by post-annealing these films under vacuum. These findings reveal the contribution of oxygen deficiency defects to the long-range FM. We demonstrate the possible FM mechanisms, which are confirmed by density functional theory study, and show that Gd dopants are essential for establishing FM that is induced by intrinsic defects in these films.

Influence of cement film thickness on the retention of implant-retained crowns.

Science.gov (United States)

Mehl, Christian; Harder, Sönke; Steiner, Martin; Vollrath, Oliver; Kern, Matthias

2013-12-01

The main goal of this study was to establish a new, high precision procedure to evaluate the influence of cement film thickness on the retention of cemented implant-retained crowns. Ninety-six tapered titanium abutments (6° taper, 4.3 mm diameter, Camlog) were shortened to 4 mm. Computer-aided design was used to design the crowns, and selective laser sintering, using a cobalt-chromium alloy, was used to produce the crowns. This method used a focused high-energy laser beam to fuse a localized region of metal powder to build up the crowns gradually. Before cementing, preset cement film thicknesses of 15, 50, 80, or 110 μm were established. Glass ionomer, polycarboxylate, or resin cements were used for cementation. After 3 days storage in demineralized water, the retention of the crowns was measured in tension using a universal testing machine. The cement film thicknesses could be achieved with a high level of precision. Interactions between the factors cement and cement film thickness could be found (p ≤ 0.001). For all cements, crown retention decreased significantly between a cement film thickness of 15 and 50 μm (p ≤ 0.001). At 15 μm cement film thickness, the resin cement was the most retentive cement, followed by the polycarboxylate and then the glass ionomer cement (p ≤ 0.05). The results suggest that cement film thickness has an influence on the retentive strength of cemented implant-retained crowns. © 2013 by the American College of Prosthodontists.

Energy gap of ferromagnet-superconductor bilayers

Energy Technology Data Exchange (ETDEWEB)

Halterman, Klaus; Valls, Oriol T

2003-10-15

The excitation spectrum of clean ferromagnet-superconductor bilayers is calculated within the framework of the self-consistent Bogoliubov-de Gennes theory. Because of the proximity effect, the superconductor induces a gap in the ferromagnet spectrum, for thin ferromagnetic layers. The effect depends strongly on the exchange field in the ferromagnet. We find that as the thickness of the ferromagnetic layer increases, the gap disappears, and that its destruction arises from those quasiparticle excitations with wave vectors mainly along the interface. We discuss the influence that the interface quality and Fermi energy mismatch between the ferromagnet and superconductor have on the calculated energy gap. We also evaluate the density of states in the ferromagnet, and we find it in all cases consistent with the gap results.

Fabrication of thick superconducting films by decantation

Directory of Open Access Journals (Sweden)

Julián Betancourt M.

1991-07-01

Full Text Available We have found superconducting behavior in thick films fabricated by decantation. In this paper we present the experimental method and results obtained using commercial copper substrates.

Properties of conductive thick-film inks

Science.gov (United States)

Holtze, R. F.

1972-01-01

Ten different conductive inks used in the fabrication of thick-film circuits were evaluated for their physical and handling properties. Viscosity, solid contents, and spectrographic analysis of the unfired inks were determined. Inks were screened on ceramic substrates and fired for varying times at specified temperatures. Selected substrates were given additional firings to simulate the heat exposure received if thick-film resistors were to be added to the same substrate. Data are presented covering the (1) printing characteristics, (2) solderability using Sn-63 and also a 4 percent silver solder, (3) leach resistance, (4) solder adhesion, and (5) wire bonding properties. Results obtained using different firing schedules were compared. A comparison was made between the various inks showing general results obtained for each ink. The changes in firing time or the application of a simulated resistor firing had little effect on the properties of most inks.

Positive magnetoresistance in ferromagnetic Nd-doped In2O3 thin films grown by pulse laser deposition

KAUST Repository

Xing, G. Z.; Yi, J. B.; Yan, F.; Wu, Tao; Li, S.

2014-01-01

temperature ferromagnetism in the as-prepared films. The strong sp-f exchange interaction as a result of the rare earth doping is discussed as the origin of the magnetotransport behaviours. A positive magnetoresistance (∼29.2%) was observed at 5 K and ascribed

Effect of film thickness, type of buffer layer, and substrate temperature on the morphology of dicyanovinyl-substituted sexithiophene films

Energy Technology Data Exchange (ETDEWEB)

Levin, Alexandr A., E-mail: alexander.levin@iapp.de [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Levichkova, Marieta [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Heliatek GmbH, 01187 Dresden (Germany); Hildebrandt, Dirk; Klisch, Marina; Weiss, Andre [Heliatek GmbH, 01187 Dresden (Germany); Wynands, David; Elschner, Chris [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany); Pfeiffer, Martin [Heliatek GmbH, 01187 Dresden (Germany); Leo, Karl; Riede, Moritz [Institut fuer Angewandte Photophysik, Technische Universitaet Dresden, 01062 Dresden (Germany)

2012-01-31

The influence of film thickness, type of buffer underlayer, and deposition substrate temperature on the crystal structure, microstructure, and morphology of the films of dicyanovinyl-substituted sexithiophene with four butyl-chains (DCV6T-Bu{sub 4}) is investigated by means of X-ray diffraction (XRD) and X-ray reflectivity methods. A neat Si wafer or a Si wafer covered by a 15 nm buffer underlayer of fullerene C{sub 60} or 9,9-Bis[4-(N,N-bis-biphenyl-4-yl-amino)phenyl]-9H-fluorene (BPAPF) is used as a substrate. The crystalline nature and ordered molecular arrangement of the films are recorded down to 6 nm film thickness. By using substrates heated up to 90 Degree-Sign C during the film deposition, the size of the DCV6T-Bu{sub 4} crystallites in direction perpendicular to the film surface increases up to value of the film thickness. With increasing deposition substrate temperature or film thickness, the DCV6T-Bu{sub 4} film relaxes, resulting in reducing the interplane distances closer to the bulk values. For the films of the same thickness deposited at the same substrate temperature, the DCV6T-Bu{sub 4} film relaxes for growth on Si to BPAPF to C{sub 60}. Thicker films grown at heated substrates are characterized by smaller density, higher roughness and crystallinity and better molecular ordering. A thin (up to about 6 nm-thick) intermediate layer with linear density-gradient is formed at the C{sub 60}/DCV6T-Bu{sub 4} interface for the films with buffer C{sub 60} layer. The XRD pattern of the DCV6T-Bu{sub 4} powder is indexed using triclinic unit cell parameters.

Optimization of phantom backscatter thickness and lateral scatter volume for radiographic film dosimetry

International Nuclear Information System (INIS)

Srivastava, R.P.; De Wagter, C.

2012-01-01

The aim of this study is to determine the optimal backscatter thickness and lateral phantom dimension beyond the irradiated volume for the dosimetric verification with radiographic film when applying large field sizes. Polystyrene and Virtual Water™ phantoms were used to study the influence of the phantom backscatter thickness. EDR2 and XV films were used in 6 and 18 MV photon beams. The results show 11.4% and 6.4% over-response of the XV2 film when compared to the ion chamber for 6 MV 30×30 and 10×10 cm 2 field sizes, respectively, when the phantom backscatter thickness is 5 cm. For the same setup, measurements with EDR2 films indicate 8.5% and 1.7% over-response. The XV2 film response in the polystyrene phantom is about 2.0% higher than in the Virtual Water™ phantom for the 6 MV beam and 20 cm backscatter thickness. Similar results were obtained for EDR2 film. In the lateral scatter study, film response was nearly constant within 5 cm of lateral thickness and it increases when lateral thickness increases due to more multiple scatter of low energy photons. The backscatter thickness of the phantom should be kept below 7 cm for the accuracy of the film dosimetry. The lateral extension of the phantom should not be more than 5 cm from the field boundary in case of large irradiated volumes.

Post-annealing effect on the room-temperature ferromagnetism in Cu-doped ZnO thin films

International Nuclear Information System (INIS)

Hu, Yu-Min; Kuang, Chein-Hsiun; Han, Tai-Chun; Yu, Chin-Chung; Li, Sih-Sian

2015-01-01

In this work, we investigated the structural and magnetic properties of both as-deposited and post-annealed Cu-doped ZnO thin films for better understanding the possible mechanisms of room-temperature ferromagnetism (RT-FM) in ZnO-based diluted magnetic oxides. All of the films have a c-axis-oriented wurtzite structure and display RT-FM. X-ray photoelectron spectroscopy results showed that the incorporated Cu ions in as-deposited films are in 1+ valence state merely, while an additional 2+ valence state occurs in post-annealed films. The presence of Cu 2+ state in post-annealed film accompanies a higher magnetization value than that of as-deposited film and, in particular, the magnetization curves at 10 K and 300 K of the post-annealed film separate distinctly. Since Cu 1+ ion has a filled 3d band, the RT-FM in as-deposited Cu-doped ZnO thin films may stem solely from intrinsic defects, while that in post-annealed films is enhanced due to the presence of CuO crystallites

Comparison of field swept ferromagnetic resonance methods - A case study using Ni-Mn-Sn films

Science.gov (United States)

Modak, R.; Samantaray, B.; Mandal, P.; Srinivasu, V. V.; Srinivasan, A.

2018-05-01

Ferromagnetic resonance spectroscopy is used to understand the magnetic behavior of Ni-Mn-Sn Heusler alloy film. Two popular experimental methods available for recording FMR spectra are presented here. In plane angular (φH) variation of magnetic relaxation is used to evaluate the in plane anisotropy (Ku) of the film. The out of plane (θH) variation of FMR spectra has been numerically analyzed to extract the Gilbert damping coefficient, effective magnetization and perpendicular magnetic anisotropy (K1). Magnetic homogeneity of the film had also been evaluated in terms of 2-magnon contribution from FMR linewidth. The advantage and limitations of these two popular FMR techniques are discussed on the basis of the results obtained in this comparative study.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

Energy Technology Data Exchange (ETDEWEB)

Garcés, F.A., E-mail: felipe.garces@santafe-conicet.gov.ar [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Budini, N. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Arce, R.D.; Schmidt, J.A. [Instituto de Física del Litoral (CONICET-UNL), Güemes 3450, Santa Fe S3000GLN (Argentina); Facultad de Ingeniería Química, Universidad Nacional del Litoral, Santiago del Estero 2829, Santa Fe S3000AOM (Argentina)

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness.

Effect of thickness on structural and electrical properties of Al-doped ZnO films

International Nuclear Information System (INIS)

Garcés, F.A.; Budini, N.; Arce, R.D.; Schmidt, J.A.

2015-01-01

In this work, we have investigated the influence of thickness on structural and electrical properties of Al-doped ZnO films. Transparent conducting oxide films were grown by the spray pyrolysis technique from precursors prepared via the sol–gel method. We determined the structural properties of the films by performing X-ray diffraction and mosaicity measurements, which evidenced an increase of disorder and inhomogeneity between crystalline domains as the films thickened. This behavior was contrasted with results obtained from electrical measurements and was attributed to plastic deformation of the films as their thickness increased. As a result, the carrier mobility, the optical gap and the activation energy are affected due to emerging grain boundaries and a higher degree of disorder. - Highlights: • Al-doped ZnO thin films on glass with different thicknesses • Film thickness affects the morphological and electrical properties. • Increasing time deposition allows modification of resistivity and Hall mobility. • Mosaicity between crystalline domains increases with film thickness

Metallic oxide switches using thick film technology

Science.gov (United States)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Persistent quantum-size effect in aluminum films up to twelve atoms thick

International Nuclear Information System (INIS)

Boettger, J.C.

1996-01-01

Total energies and work functions have been calculated for unrelaxed, free-standing Al(111) films, 1 endash 12 layers thick, using the all-electron, full-potential linear combination of Gaussian-type orbitals endash fitting-function technique. The work function exhibits a significant quantum-size effect (at least 0.1 eV) over the entire range of thickness considered. This result contradicts an old prediction that the work function of an Al(111) N-layer film will converge to within a few hundredths of an eV by N=6. The present result, which is consistent with earlier jellium calculations, demonstrates the risk of mistaking an accidental coincidence of work functions for two films, differing in thickness by one layer, for a true convergence with respect to thickness. The implications for thin-film calculations of surface properties are discussed. A linear fit to the film binding energy vs thickness is used to extract the Al(111) surface energy (0.45 eV) and the binding energy of bulk Al (4.06 eV). copyright 1996 The American Physical Society

Mems-based pzt/pzt bimorph thick film vibration energy harvester

DEFF Research Database (Denmark)

Xu, Ruichao; Lei, Anders; Dahl-Petersen, Christian

2011-01-01

We describe fabrication and characterization of a significantly improved version of a MEMS-based PZT/PZT thick film bimorph vibration energy harvester with an integrated silicon proof mass. The main advantage of bimorph vibration energy harvesters is that strain energy is not lost in mechanical...... support materials since only PZT is strained, and thus it has a potential for significantly higher output power. An improved process scheme for the energy harvester resulted in a robust fabrication process with a record high fabrication yield of 98.6%. Moreover, the robust fabrication process allowed...... a high pressure treatment of the screen printed PZT thick films prior to sintering, improving the PZT thick film performance and harvester power output reaches 37.1 μW at 1 g....

Critical behaviour of magnetic thin film with Heisenberg spin-S model

International Nuclear Information System (INIS)

Masrour, R.; Hamedoun, M.; Bouslykhane, K.; Hourmatallah, A.; Benzakour, N.; Benyoussef, A.

2009-01-01

The magnetic properties of a ferromagnetic thin film of face centered cubic (FCC) lattice with Heisenberg spin-S are examined using the high-temperature series expansions technique extrapolated with Pade approximations method. The critical reduced temperature of the system τ c is studied as function of thickness of the film and the exchange interactions in the bulk, and within the surfaces J b , J s and J perpendicular respectively. A critical value of surface exchange interaction above which surface magnetism appears is obtained. The dependence of the reduced critical temperature on the film thickness L has been investigated.

Magnetic profiles in ferromagnetic/superconducting superlattices.

Energy Technology Data Exchange (ETDEWEB)

te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

2007-02-28

The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

Correlation of Gear Surface Fatigue Lives to Lambda Ratio (Specific Film Thickness)

Science.gov (United States)

Krantz, Timothy Lewis

2013-01-01

The effect of the lubrication regime on gear performance has been recognized, qualitatively, for decades. Often the lubrication regime is characterized by the specific film thickness being the ratio of lubricant film thickness to the composite surface roughness. Three studies done at NASA to investigate gearing pitting life are revisited in this work. All tests were done at a common load. In one study, ground gears were tested using a variety of lubricants that included a range of viscosities, and therefore the gears operated with differing film thicknesses. In a second and third study, the performance of gears with ground teeth and superfinished teeth were assessed. Thicker oil films provided longer lives as did improved surface finish. These datasets were combined into a common dataset using the concept of specific film thickness. This unique dataset of more 258 tests provides gear designers with some qualitative information to make gear design decisions.

The research of device for measuring film thickness of intelligent coating machine

Directory of Open Access Journals (Sweden)

Wang Wanjun

2015-01-01

Full Text Available Ion beam sputtering machine uses computer to real time monitor the change of film thickness in the preparation process of soft X ray multilayer element fabrication. It solves the problems of uneven film thickness and too thick film thickness and so on, which exist in the original preparation process. The high-precision quartz crystal converts film thickness measurement into frequency measurement. The equal precision frequency meter based on FPGA measures the frequency. It can reduce the signal delay and interference signal of discrete components, accordingly improving the accuracy of measurement. Then it sents the count value to the host computer through the single chip microcomputer serial port. It calculates and displays the value by the GUI of LabVIEW. The experimental results show that, the relative measurement error can be decreased to 1/10, i.e., the measurement accuracy can be improved by more than ten times.

CdO Doped Indium Oxide Thick Film as a Low Temperature H2S Gas Sensor

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2011-06-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CdCl2 for different intervals of time. The surface modified (10 min In2O3 thick film showed maximum response to H2S gas (10 ppm than pure In2O3 thick film at 150 oC. Cadmium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the thick films indicates the key role played by cadmium oxide on the surface of thick films. The selectivity, gas response and recovery time of the thick films were measured and presented.

Ferromagnetic resonance linewidth and two-magnon scattering in Fe1-xGdx thin films

Directory of Open Access Journals (Sweden)

Sheng Jiang

2017-05-01

Full Text Available Magnetization dynamics of Fe1-xGdx thin films (0 ≤ x ≤ 22% has been investigated by ferromagnetic resonance (FMR. Out-of-plane magnetic field orientation dependence of resonance field and linewidth has been measured. Resonance field and FMR linewidth have been fitted by the free energy of our system and Landau-Lifshitz-Gilbert (LLG equation. It is found that FMR linewidth contains huge extrinsic components including two-magnon scattering contribution and inhomogeneous broadening for FeGd alloy thin films. In addition, the intrinsic linewidth and real damping constants have been obtained by extracting the extrinsic linewidth. The damping constant enhanced from 0.011 to 0.038 as Gd dopants increase from 0 to 22% which originates from the enhancement of L-S coupling in FeGd thin films. Besides, gyromagnetic ratio, Landé factor g and magnetic anisotropy of our films have also been determined.

Hydroxyapatite screen-printed thick films: optical and electrical properties

International Nuclear Information System (INIS)

Silva, C.C.; Rocha, H.H.B.; Freire, F.N.A.; Santos, M.R.P.; Saboia, K.D.A.; Goes, J.C.; Sombra, A.S.B.

2005-01-01

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al 2 O 3 substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials

Hydroxyapatite screen-printed thick films: optical and electrical properties

Energy Technology Data Exchange (ETDEWEB)

Silva, C.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Rocha, H.H.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Freire, F.N.A. [Departamento de Quimica Orga-circumflex nica e Inorga-circumflex nica-UFC, Caixa Postal 6030, CEP 60455-760, Fortaleza, Ceara (Brazil); Santos, M.R.P. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Saboia, K.D.A. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Goes, J.C. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil); Sombra, A.S.B. [Laboratorio de Telecomunicaco-tilde es e Ciencia e Engenharia de Materiais (LOCEM), Departamento de Fisica, Universidade Federal do Ceara, Campus do Pici, Caixa Postal 6030, 60455-760 Fortaleza, Ceara (Brazil)]. E-mail: sombra@fisica.ufc.br

2005-07-15

In this paper, we did a study on the structural and electrical properties of bioceramic hydroxiapatite (HA) thick films. The films were prepared in two layers using the screen-printing technique on Al{sub 2}O{sub 3} substrates. Mechanical alloying has been used successfully to produce nanocrystalline powders of hydroxyapatite to be used in the films. We also look for the effect of the grain size of the HA in the final properties of the film. The samples were studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive spectroscopy (EDS), infrared and Raman scattering spectroscopy and electrical measurements. We did a study of the dielectric permittivity and the loss of the films in the radio-frequency of the spectra. The X-ray diffraction patterns of the films indicate that all the peaks associated to HA phase is present in the films. One can notice that, for all the films there is a decrease of the DC (dielectric constant) with the increase of the frequency. The values of the dielectric constant of the films are in between 4 and 9 (at 1 kHz), as a function of the flux concentration. The loss is decreasing as we increase the frequency for all the films. These results strongly suggest that the screen-printing HA thick films are good candidates for applications in biocompatible coatings of implant materials.

Thick-Film and LTCC Passive Components for High-Temperature Electronics

Directory of Open Access Journals (Sweden)

A. Dziedzic

2013-04-01

Full Text Available At this very moment an increasing interest in the field of high-temperature electronics is observed. This is a result of development in the area of wide-band semiconductors’ engineering but this also generates needs for passives with appropriate characteristics. This paper presents fabrication as well as electrical and stability properties of passive components (resistors, capacitors, inductors made in thick-film or Low-Temperature Co-fired Ceramics (LTCC technologies fulfilling demands of high-temperature electronics. Passives with standard dimensions usually are prepared by screen-printing whereas combination of standard screen-printing with photolithography or laser shaping are recommenced for fabrication of micropassives. Attainment of proper characteristics versus temperature as well as satisfactory long-term high-temperature stability of micropassives is more difficult than for structures with typical dimensions for thick-film and LTCC technologies because of increase of interfacial processes’ importance. However it is shown that proper selection of thick-film inks together with proper deposition method permit to prepare thick-film micropassives (microresistors, air-cored microinductors and interdigital microcapacitors suitable for the temperature range between 150°C and 400°C.

Gas Sensing Performance of Pure and Modified BST Thick Film Resistor

Directory of Open Access Journals (Sweden)

G. H. JAIN

2008-04-01

Full Text Available Barium Strontium Titanate (BST-(Ba0.87Sr0.13TiO3 ceramic powder was prepared by mechanochemical process. The thick films of different thicknesses of BST were prepared by screen-printing technique and gas-sensing performance of these films was tested for various gases. The films showed highest response and selectivity to ammonia gas. The pure BST film was surface modified by surfactant CrO3 by using dipping technique. The surface modified film suppresses the response to ammonia and enhances to H2S gas. The surface modification of films changes the adsorption-desorption relationship with the target gas and shifts its selectivity. The gas response, selectivity, response and recovery time of the pure and modified films were measured and presented.

Studies on Gas Sensing Performance of Cr-doped Indium Oxide Thick Film Sensors

Directory of Open Access Journals (Sweden)

D. N. Chavan

2011-02-01

Full Text Available A series of In1-xCrxO3 composites, with x ranging from 0.01 to 0.5wt% were prepared by mechanochemically starting from InCl3 and CrO3. Structural and micro structural characteristics of the sample were investigated by XRD, SEM with EDAX. Thick films of pure Indium Oxide and composites were prepared by standard screen printing technique. The gas sensitivity of these thick films was tested for various gases. The pure Indium Oxide thick film (x=0 shows maximum sensitivity to ethanol vapour (80 ppm at 350 oC, but composite-A (x=0.01 thick film shows maximum sensitivity to H2S gas (40 ppm at 250 oC, composite-B (x=0.1 thick film shows higher sensitivity to NH3 gas (80 ppm at 250 oC and composite-C (x=0.5 thick film shows maximum sensitivity to Cl2 gas (80 ppm at 350 oC. A systematic study of gas sensing performance of the sensors indicates the key role played by concentration variation of Cr doped species. The sensitivity, selectivity and recovery time of the sensor were measured and presented.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

International Nuclear Information System (INIS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-01-01

An effective method for determining the optical constants of Ta 2 O 5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta 2 O 5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta 2 O 5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta 2 O 5 . This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices. (orig.)

Thickness-dependence of optical constants for Ta2O5 ultrathin films

Science.gov (United States)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Heteroepitaxial Growth of Ferromagnetic MnSb(0001) Films on Ge/Si(111) Virtual Substrates.

Science.gov (United States)

Burrows, Christopher W; Dobbie, Andrew; Myronov, Maksym; Hase, Thomas P A; Wilkins, Stuart B; Walker, Marc; Mudd, James J; Maskery, Ian; Lees, Martin R; McConville, Christopher F; Leadley, David R; Bell, Gavin R

2013-11-06

Molecular beam epitaxial growth of ferromagnetic MnSb(0001) has been achieved on high quality, fully relaxed Ge(111)/Si(111) virtual substrates grown by reduced pressure chemical vapor deposition. The epilayers were characterized using reflection high energy electron diffraction, synchrotron hard X-ray diffraction, X-ray photoemission spectroscopy, and magnetometry. The surface reconstructions, magnetic properties, crystalline quality, and strain relaxation behavior of the MnSb films are similar to those of MnSb grown on GaAs(111). In contrast to GaAs substrates, segregation of substrate atoms through the MnSb film does not occur, and alternative polymorphs of MnSb are absent.

Effect of separated layer thickness on magnetoresistance and magnetic properties of Co/Dy/Co and Ni/Dy/Ni film systems

Science.gov (United States)

Shabelnyk, T. M.; Shutylieva, O. V.; Vorobiov, S. I.; Pazukha, I. M.; Chornous, A. M.

2018-01-01

Co(5 nm)/Dy(tDy)/Co(20 nm)/S and Ni(5 nm)/Dy(tDy)/Ni(20 nm)/S trilayer films are prepared by electron-beam sputtering to investigate the influence of dysprosium layer thickness (tDy) and thermal annealing on the crystal structure, magnetoresistance (MR) and magnetic properties of thin films. The thickness of Dy layer changed in the range from 1 nm to 20 nm. The samples annealed for 20 min at 700 K. Electron diffraction patterns reveal that the as-deposited and annealed systems Co/Dy/Co and Ni/Dy/Ni had fcc-Co + hcp-Dy and fcc-Ni + hcp-Dy phase state, respectively. It is also shown that at the tDy = 15 nm the transition from amorphous to crystalline structures of Dy layer is observed. An increase in the Dy layer thickness results in changes in the MR and magnetic properties of the trilayer systems. It is shown that MR is most thermally stable against annealing to 700 K at tDy = 15 nm for Co/Dy/Co as well as for Ni/Dy/Ni. For tDy = 15 nm the, value of MR for both system increases by two times compared to those of pure ferromagnetic (FM) samples. The coercivity (Bc), remanent (Mr) and saturation (Ms) magnetization of the in-plain magnetization hysteresis loops are related to the Dy layer thickness too. The coercivity depends on the FM materials type and diffusion processes at the layer boundary. Accordingly, Mr and Ms are reduced with tDy increasing before and after annealing for both trilayer systems.

Evaluation of interlayer ferromagnetic coupling for stacked media by adding reference layer

International Nuclear Information System (INIS)

Tham, K K; Saito, S; Itagaki, N; Hinata, S; Takahashi, M; Hasegawa, D

2011-01-01

The trial for quantitative evaluation of interlayer ferromagnetic coupling between granular and cap layer in stacked media is reported. The evaluation is realized by analyzing M-H loop of stacked media with another reference layer added on the cap layer. The reference layer is antiferromagnetically coupled with the cap layer through non-magnetic spacer layer. In this experiment, Rh which leads to antiferromagnetic coupling constant along film normal direction of around 2 erg/cm 2 was used as non-magnetic spacer layer. According to the evaluation result done by this method, when thickness of the spacer Pd layer between granular layer and cap layer is increased to 1.1 nm, ferromagnetic coupling constant is weakened to 7.2 erg/cm 2 which results in reduction of saturation field.

Thin dielectric film thickness determination by advanced transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Diebold, A.C.; Foran, B.; Kisielowski, C.; Muller, D.; Pennycook, S.; Principe, E.; Stemmer, S.

2003-09-01

High Resolution Transmission Electron Microscopy (HR-TEM) has been used as the ultimate method of thickness measurement for thin films. The appearance of phase contrast interference patterns in HR-TEM images has long been confused as the appearance of a crystal lattice by non-specialists. Relatively easy to interpret crystal lattice images are now directly observed with the introduction of annular dark field detectors for scanning TEM (STEM). With the recent development of reliable lattice image processing software that creates crystal structure images from phase contrast data, HR-TEM can also provide crystal lattice images. The resolution of both methods was steadily improved reaching now into the sub Angstrom region. Improvements in electron lens and image analysis software are increasing the spatial resolution of both methods. Optimum resolution for STEM requires that the probe beam be highly localized. In STEM, beam localization is enhanced by selection of the correct aperture. When STEM measurement is done using a highly localized probe beam, HR-TEM and STEM measurement of the thickness of silicon oxynitride films agree within experimental error. In this paper, the optimum conditions for HR-TEM and STEM measurement are discussed along with a method for repeatable film thickness determination. The impact of sample thickness is also discussed. The key result in this paper is the proposal of a reproducible method for film thickness determination.

Misfit strain-film thickness phase diagrams and related electromechanical properties of epitaxial ultra-thin lead zirconate titanate films

Energy Technology Data Exchange (ETDEWEB)

Qiu, Q.Y.; Mahjoub, R. [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia); Alpay, S.P. [Materials Science and Engineering Program and Institute of Materials Science, University of Connecticut, Storrs, CT 06269 (United States); Nagarajan, V., E-mail: nagarajan@unsw.edu.au [School of Materials Science and Engineering, University of New South Wales, Sydney, NSW 2052 (Australia)

2010-02-15

The phase stability of ultra-thin (0 0 1) oriented ferroelectric PbZr{sub 1-x}Ti{sub x}O{sub 3} (PZT) epitaxial thin films as a function of the film composition, film thickness, and the misfit strain is analyzed using a non-linear Landau-Ginzburg-Devonshire thermodynamic model taking into account the electrical and mechanical boundary conditions. The theoretical formalism incorporates the role of the depolarization field as well as the possibility of the relaxation of in-plane strains via the formation of microstructural features such as misfit dislocations at the growth temperature and ferroelastic polydomain patterns below the paraelectric-ferroelectric phase transformation temperature. Film thickness-misfit strain phase diagrams are developed for PZT films with four different compositions (x = 1, 0.9, 0.8 and 0.7) as a function of the film thickness. The results show that the so-called rotational r-phase appears in a very narrow range of misfit strain and thickness of the film. Furthermore, the in-plane and out-of-plane dielectric permittivities {epsilon}{sub 11} and {epsilon}{sub 33}, as well as the out-of-plane piezoelectric coefficients d{sub 33} for the PZT thin films, are computed as a function of misfit strain, taking into account substrate-induced clamping. The model reveals that previously predicted ultrahigh piezoelectric coefficients due to misfit-strain-induced phase transitions are practically achievable only in an extremely narrow range of film thickness, composition and misfit strain parameter space. We also show that the dielectric and piezoelectric properties of epitaxial ferroelectric films can be tailored through strain engineering and microstructural optimization.

Formation process of graphite film on Ni substrate with improved thickness uniformity through precipitation control

Science.gov (United States)

Kim, Seul-Gi; Hu, Qicheng; Nam, Ki-Bong; Kim, Mun Ja; Yoo, Ji-Beom

2018-04-01

Large-scale graphitic thin film with high thickness uniformity needs to be developed for industrial applications. Graphitic films with thicknesses ranging from 3 to 20 nm have rarely been reported, and achieving the thickness uniformity in that range is a challenging task. In this study, a process for growing 20 nm-thick graphite films on Ni with improved thickness uniformity is demonstrated and compared with the conventional growth process. In the film grown by the process, the surface roughness and coverage were improved and no wrinkles were observed. Observations of the film structure reveal the reasons for the improvements and growth mechanisms.

Realistic reflectance spectrum of thin films covering a transparent optically thick substrate

Energy Technology Data Exchange (ETDEWEB)

Cesaria, M., E-mail: maura.cesaria@le.infn.it; Caricato, A. P.; Martino, M. [Department of Mathematics and Physics “Ennio De Giorgi,” University of Salento, Via Arnesano, I-73100 Lecce (Italy)

2014-07-21

A spectrophotometric strategy is presented and discussed for calculating realistically the reflectance spectrum of an absorbing film deposited over a thick transparent or semi-transparent substrate. The developed route exploits simple mathematics, has wide range of applicability (high-to-weak absorption regions and thick-to-ultrathin films), rules out numerical and curve-fitting procedures as well as model-functions, inherently accounts for the non-measurable contribution of the film-substrate interface as well as substrate backside, and describes the film reflectance spectrum as determined by the experimental situation (deposition approach and parameters). The reliability of the method is tested on films of a well-known material (indium tin oxide) by deliberately changing film thickness and structural quality through doping. Results are found consistent with usual information yielded by reflectance, its inherent relationship with scattering processes and contributions to the measured total reflectance.

Solvent annealing induced phase separation and dewetting in PMMA∕SAN blend film: film thickness and solvent dependence.

Science.gov (United States)

You, Jichun; Zhang, Shuangshuang; Huang, Gang; Shi, Tongfei; Li, Yongjin

2013-06-28

The competition between "dewetting" and "phase separation" behaviors in polymer blend films attracts significant attention in the last decade. The simultaneous phase separation and dewetting in PMMA∕SAN [poly(methyl methacrylate) and poly(styrene-ran-acrylonitrile)] blend ultrathin films upon solvent annealing have been observed for the first time in our previous work. In this work, film thickness and annealing solvent dependence of phase behaviors in this system has been investigated using atomic force microscopy and grazing incidence small-angle X-ray scattering (GISAXS). On one hand, both vertical phase separation and dewetting take place upon selective solvent vapor annealing, leading to the formation of droplet∕mimic-film structures with various sizes (depending on original film thickness). On the other hand, the whole blend film dewets the substrate and produces dispersed droplets on the silicon oxide upon common solvent annealing. GISAXS results demonstrate the phase separation in the big dewetted droplets resulted from the thicker film (39.8 nm). In contrast, no period structure is detected in small droplets from the thinner film (5.1 nm and 9.7 nm). This investigation indicates that dewetting and phase separation in PMMA∕SAN blend film upon solvent annealing depend crucially on the film thickness and the atmosphere during annealing.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

International Nuclear Information System (INIS)

Zhou Hao; Hong Jiawang; Zhang Yihui; Li Faxin; Pei Yongmao; Fang Daining

2012-01-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO 3 thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Flexoelectricity induced increase of critical thickness in epitaxial ferroelectric thin films

Energy Technology Data Exchange (ETDEWEB)

Zhou Hao [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Hong Jiawang; Zhang Yihui [Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China); Li Faxin [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Pei Yongmao, E-mail: peiym@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Fang Daining, E-mail: fangdn@pku.edu.cn [State Key Laboratory for Turbulence and Complex Systems, College of Engineering, Peking University, Beijing 100871 (China); Department of Engineering Mechanics, Tsinghua University, Beijing 100084 (China)

2012-09-01

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase the theoretical critical thickness in epitaxial BaTiO{sub 3} thin films, below which the switchable spontaneous polarization vanishes. This increase is remarkable in tensile films while trivial in compressive films due to the electrostriction caused decrease of potential barrier, which can be easily destroyed by the flexoelectricity, between the ferroelectric state and the paraelectric state in tensile films. In addition, the films are still in a uni-polar state even below the critical thickness due to the flexoelectric effect.

Ethanol vapour sensing properties of screen printed WO 3 thick films

Indian Academy of Sciences (India)

The ethanol vapour sensing properties of these thick films were investigated at different operating temperatures and ethanol vapour concentrations. The WO3 thick films exhibit excellent ethanol vapour sensing properties with a maximum sensitivity of ∼1424.6% at 400°C in air atmosphere with fast response and recovery ...

The skyrmion-bubble transition in a ferromagnetic thin film

Directory of Open Access Journals (Sweden)

Anne Bernand-Mantel, Lorenzo Camosi, Alexis Wartelle, Nicolas Rougemaille, Michaël Darques, Laurent Ranno

2018-05-01

Full Text Available Magnetic skyrmions and bubbles, observed in ferromagnetic thin films with perpendicular magnetic anisotropy, are topological solitons which differ by their characteristic size and the balance in the energies at the origin of their stabilisation. However, these two spin textures have the same topology and a continuous transformation between them is allowed. In the present work, we derive an analytical model to explore the skyrmion-bubble transition. We evidence a region in the parameter space where both topological soliton solutions coexist and close to which transformations between skyrmion and bubbles are observed as a function of the magnetic field. Above a critical point, at which the energy barrier separating both solutions vanishes, only one topological soliton solution remains, which size can be continuously tuned from micrometer to nanometer with applied magnetic field.

Towards a new thickness-independent gamma radiation plastic film dosimeter

International Nuclear Information System (INIS)

Vieira, Marli Barbosa; Araujo, Patricia L.; Araujo, Elma S.

2013-01-01

A 100% national single-use gamma radiation plastic film dosimeter is presented in this work. A new approach for the development of this material allowed a step forward in the performance of poly (methyl metacrylate) films (PMMA) colored with bromothymol blue (BTB) acid-base indicator. We manage to improve dosimeter performance by introducing a gamma radiation insensitive dye to compensate film thickness variations. By doing so, we were able to obtain consistent dose-response correlations within a set of samples presenting 46 to 110 micrometers in thickness. Hence, our PMMA/BTB-P film dosimeter is suitable to measure absorbed dose in the 2-100kGy range even when film thickness undergoes more than 100% of variation. In addition, dose response data remain practically unaltered for four months after the exposure, when dosimeter films are kept in dark conditions and under refrigeration. The radiation effects on the optical properties were evaluated for Ultraviolet-Visible (UV-Vis) spectrophotometric analysis. Data of characteristic dose-response correlation in terms of changes in the maximum UV-Vis absorption due to radiation, and stability in time are also described. This potential new product is a promising tool for industrial radiation facilities, especially in gamma sterilization of medical supplies. (author)

Ferromagnetic resonance study of Fe{sub 50}Ag{sub 50} granular film

Energy Technology Data Exchange (ETDEWEB)

Sarmiento, G. [Dpto. Electricicidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apdo. 644, 48080 Bilbao (Spain)]. E-mail: websamug@lg.ehu.es; Fdez-Gubieda, M.L. [Dpto. Electricicidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apdo. 644, 48080 Bilbao (Spain); Siruguri, V. [Dpto. Electricicidad y Electronica, Universidad del Pais Vasco (UPV/EHU), Apdo. 644, 48080 Bilbao (Spain); UGC-DAE Consortium for Scientific Research, R-5 Shed, BARC Campus, Mumbai 400085 (India); Lezama, L. [Dpto. Quimica Inorganica (UPV/EHU), Apdo. 644, 48080, Bilbao (Spain); Orue, I. [Servicios Generales de Investigacion (SGIKER), Vicerrectorado de Investigacion (UPV/EHU) (Spain)

2007-09-15

Fe{sub 50}Ag{sub 50} granular film, produced by the pulsed laser deposition technique, has been studied using ferromagnetic resonance (FMR) at temperatures ranging from 4 to 300K. Three different resonance modes are well observed in the whole temperature range. We have also studied the angular evolution of the resonance peaks at three different temperatures T=150, 250, 300K. The thermal and the angular evolution of the three resonance fields has been interpreted on the basis of the existence of different magnetic coupling between the Fe nanoparticles and a weakly magnetized interface.

Electro-physical properties of superconducting ceramic thick film prepared by partial melting method.

Science.gov (United States)

Lee, Sang Heon

2013-05-01

BiSrCaCuO superconductor thick films were prepared at several curing temperatures, and their electro-physical properties were determined to find an optimum fabrication conditions. Critical temperatures of the superconductors were decreased with increasing melting temperature, which was related to the amount of equilibrium phases of the superconducting materials with temperature. The critical temperature of BiSrCaCuO bulk and thick film superconductors were 107 K and 96 K, respectively. The variation of susceptibility of the superconductor thick film formed at 950 degrees C had multi-step-type curve for 70 G externally applied field, whereas, a superconductor thick film formed at 885 degrees C had a single step-type curve like a bulk BiSrCaCuO ceramic superconductor in the temperature-susceptibility curves. A partial melting at 865 degrees C is one of optimum conditions for making a superconductor thick film with a relatively homogeneous phase.

Self-Assembly of Ferromagnetic Organic–Inorganic Perovskite-Like Films

NARCIS (Netherlands)

Akhtar, Naureen; Polyakov, Alexey O.; Aqeel, Aisha; Gordiichuk, Pavlo; Blake, Graeme R.; Baas, Jacobus; Amenitsch, Heinz; Herrmann, Andreas; Rudolf, Petra; Palstra, Thomas T. M.

2014-01-01

Perovskite-based organic-inorganic hybrids hold great potential as active layers in electronics or optoelectronics or as components of biosensors. However, many of these applications require thin films grown with good control over structure and thickness-a major challenge that needs to be addressed.

Thickness control in electrophoretic deposition of WO3 nanofiber thin films for solar water splitting

International Nuclear Information System (INIS)

Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F.; Bedi, Jasbir S.; Perry, Christopher C.; Chen, Qiao

2015-01-01

Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO 3 nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO 3 nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

High-performance piezoelectric thick film based energy harvesting micro-generators for MEMS

DEFF Research Database (Denmark)

Zawada, Tomasz; Hansen, Karsten; Lou-Moeller, Rasmus

2010-01-01

and are transformed by the energy harvesting micro-generator into usable electrical signal. The micro-generator comprises a silicon cantilever with integrated InSensor® TF2100 PZT thick film deposited using screen-printing. The output power versus frequency and electrical load has been investigated. Furthermore......, devices based on modified, pressure treated thick film materials have been tested and compared with the commercial InSensor® TF2100 PZT thick films. It has been found that the structures based on the pressure treated materials exhibit superior properties in terms of energy output....

Localized magnetic excitations for a line of magnetic impurities in a transverse Ising thin film ferromagnet

International Nuclear Information System (INIS)

Leite, R.V.; Oliveira Filho, L.O. de; Milton Pereira, J.; Cottam, M.G.; Costa Filho, R.N.

2009-01-01

A Green's function method is used to obtain the spectrum of spin excitations associated with a linear array of magnetic impurities implanted in a ferromagnetic thin film. The equations of motion for the Green's functions of the anisotropic film are written in the framework of the Ising model in a transverse field. The frequencies of localized modes are calculated as a function of the interaction parameters for the exchange coupling between impurity-spin pairs, host-spin pairs, and impurity-host neighbors, as well as the effective field parameter at the impurity sites.

BaF2 POST-DEPOSITION REACTION PROCESS FOR THICK YBCO FILMS

International Nuclear Information System (INIS)

SUENAGA, M.; SOLOVYOV, V.F.; WU, L.; WIESMANN, H.J.; ZHU, Y.

2001-01-01

The basic processes of the so-called BaF 2 process for the formation of YBa 2 Cu 3 O 7 , YBCO, films as well as its advantages over the in situ formation processes are discussed in the previous chapter. The process and the properties of YBCO films by this process were also nicely described in earlier articles by R. Feenstra, (et al.) Here, we will discuss two pertinent subjects related to fabrication of technologically viable YBCO conductors using this process. These are (1) the growth of thick (>> 1 microm) c-axis-oriented YBCO films and (2) their growth rates. Before the detail discussions of these subjects are given, we first briefly discuss what geometrical structure a YBCO-coated conductor should be. Then, we will provide examples of simple arguments for how thick the YBCO films and how fast their growth rates need to be. Then, the discussions in the following two sections are devoted to: (1) the present understanding of the nucleation and the growth process for YBCO, and why it is so difficult to grow thick c-axis-oriented films (> 3 microm), and (2) our present understanding of the YBCO growth-limiting mechanism and methods to increase the growth rates. The values of critical-current densities J c in these films are of primary importance for the applications,. and the above two subjects are intimately related to the control of J c of the films. In general, the lower the temperatures of the YBCO formation are the higher the values of J c of the films. Thus, the present discussion is limited to those films which are reacted at ∼735 C. This is the lowest temperature at which c-axis-oriented YBCO films (1-3 microm thick) are comfortably grown. It is also well known that the non-c-axis oriented YBCO platelets are extremely detrimental to the values of J c such that their effects on J c dwarf essentially all of other microstructural effects which control J c . Hence, the discussion given below is mainly focused on how to avoid the growth of these crystallites

Study of lead free ferroelectrics using overlay technique on thick film microstrip ring resonator

Directory of Open Access Journals (Sweden)

Shridhar N. Mathad

2016-03-01

Full Text Available The lead free ferroelectrics, strontium barium niobates, were synthesized via the low cost solid state reaction method and their fritless thick films were fabricated by screen printing technique on alumina substrate. The X band response (complex permittivity at very high frequencies of Ag thick film microstrip ring resonator perturbed with strontium barium niobates (SrxBa1-xNb2O6 in form of bulk and thick film was measured. A new approach for determination of complex permittivity (ε′ and ε′′ in the frequency range 8–12 GHz, using perturbation of Ag thick film microstrip ring resonator (MSRR, was applied for both bulk and thick film of strontium barium niobates (SrxBa1-xNb2O6. The microwave conductivity of the bulk and thick film lie in the range from 1.779 S/cm to 2.874 S/cm and 1.364 S/cm to 2.296 S/cm, respectively. The penetration depth of microwave in strontium barium niobates is also reported.

Studies on Gas Sensing Performance of Pure and Surface Chrominated Indium Oxide Thick Film Resistors

Directory of Open Access Journals (Sweden)

D. N. CHAVAN

2010-12-01

Full Text Available The thick films of AR grade In2O3 were prepared by standard screen-printing technique. The gas sensing performance of thick film was tested for various gases. It showed maximum gas response to ethanol vapor at 350 oC for 80 ppm. To improve the gas response and selectivity of the film towards a particular gas, In2O3 thick films were modified by dipping them in an aqueous solution of 0.1 M CrO3 for different intervals of time. The surface chrominated (20 min In2O3 thick film showed maximum response to H2S gas (40 ppm than pure In2O3 thick film at 250 oC. Chromium oxide on the surface of the film shifts the gas response from ethanol vapor to H2S gas. A systematic study of sensing performance of the sensor indicates the key role played by chromium oxide on the surface of thick film. The selectivity, gas response and recovery time of the sensor were measured and presented.

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Energy Technology Data Exchange (ETDEWEB)

Zsurzsa, S., E-mail: zsurzsa.sandor@wigner.mta.hu; Péter, L.; Kiss, L.F.; Bakonyi, I.

2017-01-01

The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values confirmed that the nominal and actual layer thicknesses are in fairly good agreement. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H{sub c}) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H{sub c}=H{sub co}+a/d{sup n} with an exponent around n=1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints also at the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers. - Highlights: • Electrodeposited nanoscale Co films and Co/Cu layered structures. • Co layer thickness (d) dependence of coercivity (H{sub c}) and magnetoresistance. • H{sub c} depends on Co layer thickness according to H{sub c}=H{sub co}+a/d{sup n} with n around 1. • The common n value suggests a similar mechanism of magnetization reversal. • The common n value suggests the absence of coupling between magnetic layers.

Ferromagnetic resonance of a YIG film in the low frequency regime

Energy Technology Data Exchange (ETDEWEB)

Lee, Seongjae [Department of Physics, Research Institute for Natural Sciences, Hanyang University, Seoul 133-791 (Korea, Republic of); Grudichak, Scott; Sklenar, Joseph; Ketterson, John B. [Department of Physics and Astronomy, Northwestern University, Evanston, Illinois 60208 (United States); Tsai, C. C. [Department of Engineering and Management of Advanced Technology, Chang Jung Christian University, Tainan 71101, Taiwan (China); Jang, Moongyu [Department of Materials Science and Engineering, Hallym University, Chuncheon 200-702 (Korea, Republic of); Yang, Qinghui; Zhang, Huaiwu [State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology, Chengdu, Sichuan 610054 (China)

2016-07-21

An improved method for characterizing the magnetic anisotropy of films with cubic symmetry is described and is applied to an yttrium iron garnet (111) film. Analysis of the ferromagnetic resonance (FMR) spectra performed both in-plane and out-of-plane from 0.7 to 8 GHz yielded the magnetic anisotropy constants as well as the saturation magnetization. The field at which FMR is observed turns out to be quite sensitive to anisotropy constants (by more than a factor ten) in the low frequency (<2 GHz) regime, and when the orientation of the magnetic field is nearly normal to the sample plane; the restoring force on the magnetization arising from the magnetocrystalline anisotropy fields is then comparable to that from the external field, thereby allowing the anisotropy constants to be determined with greater accuracy. In this region, unusual dynamical behaviors are observed such as multiple resonances and a switching of FMR resonance with only a 1° change in field orientation at 0.7 GHz.

Attempt to produce both thick and thinned flowing superfluid films

International Nuclear Information System (INIS)

Kwoh, D.S.W.; Goodstein, D.L.

1977-01-01

As discussed in the preceding paper by Graham, a controversy has arisen over conflicting reports of whether a superfluid film becomes thinned when it is set into motion. We have performed an experiment designed to reproduce as nearly as possible two previous measurements giving opposite results. Our experiment is also designed to test directly a theory proposed by Goodstein and Saffman which would have reconciled the apparently contradictory observations. We are unable to reproduce the thick-film result, finding kinetic thinning in all cases, even where the Goodstein--Saffman theory would lead us to expect a thick film. We conclude, in agreement with Graham, that the film is always thinned when it flows, and that the theory is therefore unnecessary

Laser Cutting of Thick Diamond Films Using Low-Power Laser

Energy Technology Data Exchange (ETDEWEB)

Park, Y.J.; Baik, Y.J. [Korea Institute of Science and Technology, Seoul (Korea)

2000-02-01

Laser cutting of thick diamond films is studied rising a low-power(10 W) copper vapor laser. Due to the existence of the saturation depth in laser cutting, thick diamond films are not easily cut by low-power lasers. In this study, we have adopted a low thermal- conductivity underlayer of alumina and a heating stage (up to 500 deg. C in air) to prevent the laser energy from consuming-out and, in turn, enhance the cutting efficiency. Aspect ratio increases twice from 3.5 to 7 when the alumina underlayer used. Adopting a heating stage also increases aspect ratio and more than 10 is obtained at higher temperatures than 400 deg. C. These results show that thick diamond films can be cut, with low-power lasers, simply by modifying the thermal property of underlayer. (author). 13 refs., 5 figs.

Surface functionalization by fine ultraviolet-patterning of nanometer-thick liquid lubricant films

International Nuclear Information System (INIS)

Lu, Renguo; Zhang, Hedong; Komada, Suguru; Mitsuya, Yasunaga; Fukuzawa, Kenji; Itoh, Shintaro

2014-01-01

Highlights: • We present fine UV-patterning of nm-thick liquid films for surface functionalization. • The patterned films exhibit both a morphological pattern and a functional pattern of different surface properties. • The finest pattern linewidth was 0.5 μm. • Fine patterning is crucial for improving surface and tribological properties. - Abstract: For micro/nanoscale devices, surface functionalization is essential to achieve function and performance superior to those that originate from the inherent bulk material properties. As a method of surface functionalization, we dip-coated nanometer-thick liquid lubricant films onto solid surfaces and then patterned the lubricant films with ultraviolet (UV) irradiation through a photomask. Surface topography, adhesion, and friction measurements demonstrated that the patterned films feature a concave–convex thickness distribution with thicker lubricant in the irradiated regions and a functional distribution with lower adhesion and friction in the irradiated convex regions. The pattern linewidth ranged from 100 to as fine as 0.5 μm. The surface functionalization effect of UV-patterning was investigated by measuring the water contact angles, surface energies, friction forces, and depletion of the patterned, as-dipped, and full UV-irradiated lubricant films. The full UV-irradiated lubricant film was hydrophobic with a water contact angle of 102.1°, and had lower surface energy, friction, and depletion than the as-dipped film, which was hydrophilic with a water contact angle of 80.7°. This demonstrates that UV irradiation substantially improves the surface and tribological properties of the nanometer-thick liquid lubricant films. The UV-patterned lubricant films exhibited superior surface and tribological properties than the as-dipped film. The water contact angle increased and the surface energy, friction, and depletion decreased as the pattern linewidth decreased. In particular, the 0.5-μm patterned lubricant

Effect of Temperature on Film Thickness of Two Types of Commonly used Luting Cements.

Science.gov (United States)

Kumar, M Praveen; Priyadarshini, Reddy; Kumar, Yasangi M; Priya, K Shanthi; Chunchuvyshnavi, Chunchuvyshnavi; Yerrapragada, Harika

2017-12-01

The aim of this study is to evaluate the effect of temperature change on film thickness of both types of cements. Totally, 60 samples were prepared with 10 in each subgroup, thus comprising 30 in each group. Materials tested were glass ionomer cement (GIC) type I and zinc phosphate type I. Samples were manipulated with manufacturer's instructions and tested according to American Dental Association (ADA) guidelines. The mean values of film thickness were recorded for both groups I and II. In intragroup comparison of group 1, subgroup III (26.560 ± 0.489 urn) was found to have the highest film thickness followed by subgroup II (24.182 ± 0.576 urn) and the lowest in subgroup I (20.209 ± 0.493 urn). In intragroup comparison of group II, the film thickness recorded in subgroup III (25.215 ± 0.661 urn) was the highest followed by subgroup II (21.471 ± 0.771 urn) and the least in subgroup I (17.951 ± 0.654 urn; p film thickness than group I (23.650 ± 0.271). The results were found to be statistically significant (p film thickness. Zinc phosphate has less film thickness than GIC. Zinc phosphate should be preferred over GIC in clinical practice, and more stress should be given in mechanical preparation of crowns for better retentive quality of prosthesis.

Effect of thickness on electrical properties of SILAR deposited SnS thin films

Science.gov (United States)

Akaltun, Yunus; Astam, Aykut; Cerhan, Asena; ćayir, Tuba

2016-03-01

Tin sulfide (SnS) thin films of different thickness were prepared on glass substrates by successive ionic layer adsorption and reaction (SILAR) method at room temperature using tin (II) chloride and sodium sulfide aqueous solutions. The thicknesses of the films were determined using spectroscopic ellipsometry measurements and found to be 47.2, 65.8, 111.0, and 128.7nm for 20, 25, 30 and 35 deposition cycles respectively. The electrical properties of the films were investigated using d.c. two-point probe method at room temperature and the results showed that the resistivity was found to decrease with increasing film thickness.

Piezo-voltage control of magnetization orientation in a ferromagnetic semiconductor

Energy Technology Data Exchange (ETDEWEB)

Althammer, M.; Brandlmaier, A.; Gepraegs, S.; Opel, M.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching (Germany); Bihler, C.; Brandt, M.S. [Walter Schottky Institut, Technische Universitaet Muenchen, 85748 Garching (Germany); Schoch, W.; Limmer, W. [Institut fuer Halbleiterphysik, Universitaet Ulm, 89069 Ulm (Germany); Goennenwein, S.T.B.

2008-06-15

The possibility to control magnetic properties via electrical fields is investigated in a piezoelectric actuator/ferromagnetic semiconductor thin film hybrid structure. Using anisotropic magnetoresistance techniques, the magnetic anisotropy and the magnetization orientation within the plane of the ferromagnetic film are measured quantitatively. The experiments reveal that the application of an electrical field to the piezoelectric actuator allows to continuously and reversibly rotate the magnetization orientation in the ferromagnet by about 70 . (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

The application of the barrier-type anodic oxidation method to thickness testing of aluminum films

Science.gov (United States)

Chen, Jianwen; Yao, Manwen; Xiao, Ruihua; Yang, Pengfei; Hu, Baofu; Yao, Xi

2014-09-01

The thickness of the active metal oxide film formed from a barrier-type anodizing process is directly proportional to its formation voltage. The thickness of the consumed portion of the metal film is also corresponding to the formation voltage. This principle can be applied to the thickness test of the metal films. If the metal film is growing on a dielectric substrate, when the metal film is exhausted in an anodizing process, because of the high electrical resistance of the formed oxide film, a sudden increase of the recorded voltage during the anodizing process would occur. Then, the thickness of the metal film can be determined from this voltage. As an example, aluminum films are tested and discussed in this work. This method is quite simple and is easy to perform with high precision.

Thick film heater for sensor application

International Nuclear Information System (INIS)

Milewski, J; Borecki, M; Kalenik, J; Król, K

2014-01-01

A thick film microheater was elaborated. The microheater is intended for fast heating of small volume samples under measurement in optical based system. Thermal analysis of microheater was carried out using finite element method (FEM) for heat transfer calculation as a function of time and space. A nodal heat transfer function was calculated in classical form including all basics mechanisms of heat exchange – heat conduction, convection and radiation were considered. Work focuses on the influence of some construction parameters (ex. length, thermal conductivity of substrate, substrate thickness) on microheater performance. The results show that application of thin substrate of low thermal conductivity and low thickness for miroheater construction and resistor of optimum dimensions leads to significant power consumption decrease and increase of overall optical measurement system performance.

Screen printed nanosized ZnO thick film

Indian Academy of Sciences (India)

Unknown

The ex- tracted powder was screen printed on glass substrates using ethyl cellulose as binder and turpinol as solvent. ... racterized and a thick film paste is prepared by adding suitable .... UV peak and a broad green emission which is usually.

Multifunctional thick-film structures based on spinel ceramics for environment sensors

International Nuclear Information System (INIS)

Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O; Brunner, M

2011-01-01

Temperature sensitive thick films based on spinel-type NiMn 2 O 4 -CuMn 2 O 4 -MnCo 2 O 4 manganites with p- and p + -types of electrical conductivity and their multilayer p + -p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p + -conductive films. Some part of the p + -p structures were of high stability, the relative electrical drift being no more than 1 %.

A wrinkling-based method for investigating glassy polymer film relaxation as a function of film thickness and temperature.

Science.gov (United States)

Chung, Jun Young; Douglas, Jack F; Stafford, Christopher M

2017-10-21

We investigate the relaxation dynamics of thin polymer films at temperatures below the bulk glass transition T g by first compressing polystyrene films supported on a polydimethylsiloxane substrate to create wrinkling patterns and then observing the slow relaxation of the wrinkled films back to their final equilibrium flat state by small angle light scattering. As with recent relaxation measurements on thin glassy films reported by Fakhraai and co-workers, we find the relaxation time of our wrinkled films to be strongly dependent on film thickness below an onset thickness on the order of 100 nm. By varying the temperature between room temperature and T g (≈100 °C), we find that the relaxation time follows an Arrhenius-type temperature dependence to a good approximation at all film thicknesses investigated, where both the activation energy and the relaxation time pre-factor depend appreciably on film thickness. The wrinkling relaxation curves tend to cross at a common temperature somewhat below T g , indicating an entropy-enthalpy compensation relation between the activation free energy parameters. This compensation effect has also been observed recently in simulated supported polymer films in the high temperature Arrhenius relaxation regime rather than the glassy state. In addition, we find that the film stress relaxation function, as well as the height of the wrinkle ridges, follows a stretched exponential time dependence and the short-time effective Young's modulus derived from our modeling decreases sigmoidally with increasing temperature-both characteristic features of glassy materials. The relatively facile nature of the wrinkling-based measurements in comparison to other film relaxation measurements makes our method attractive for practical materials development, as well as fundamental studies of glass formation.

Residual stress analysis in thick uranium films

International Nuclear Information System (INIS)

Hodge, A.M.; Foreman, R.J.; Gallegos, G.F.

2005-01-01

Residual stress analysis was performed on thick, 1-25 μm, depleted uranium (DU) films deposited on an Al substrate by magnetron sputtering. Two distinct characterization techniques were used to measure substrate curvature before and after deposition. Stress evaluation was performed using the Benabdi/Roche equation, which is based on beam theory of a bi-layer material. The residual stress evolution was studied as a function of coating thickness and applied negative bias voltage (0, -200, -300 V). The stresses developed were always compressive; however, increasing the coating thickness and applying a bias voltage presented a trend towards more tensile stresses and thus an overall reduction of residual stresses

Mechanical and shape memory properties of ferromagnetic Ni2MnGa sputter-deposited films

Science.gov (United States)

Ohtsuka, M.; Matsumoto, M.; Itagaki, K.

2003-10-01

The ternary intermetallic compound Ni2MnGa is an intelligent material, which has a shape memory effect and a ferromagnetic property. Use of shape memory alloy films for an actuator of micro machines is very attractive because of its large recovery force. The data of mechanical and shape memory properties of the films are required to use for the actuator. The purpose of this study is to investigate the effects of fabrication conditions and to clarify the relationships between these properties and fabrication conditions of the Ni{2}MnGa films. The Ni{2}MnGa films were deposited with a radio-frequency magnetron sputtering apparatus using a Ni{50}Mn{25}Ga{25} or Ni{52}Mn{24}Ga{24} target. After deposition, the films were annealed at 873sim 1173 K. The asdeposited films were crystalline and had columnar grains. After the heat treatment, the grains widened and the grain boundary became indistinct with increasing heat treatment temperature. MnO and Ni{3} (Mn, Ga) precipitations were observed in the heat-treated films. The mechanical properties of the films were measured by the nanoindentation method. Hardness and elastic modulus of as-deposited films were larger than those of arcmelted bulk alloys. The hardness of the films was affected by the composition, crystal structure, microstructure and precipitation, etc. The elastic modulus of the films was also changed with the heat treatment conditions. The heat-treated films showed a thermal two-way shape memory effect.

The film thickness dependent thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers

Energy Technology Data Exchange (ETDEWEB)

Xiao Xiudi; Xu Gang, E-mail: xiudixiao@163.com; Xiong Bin; Chen Deming; Miao Lei [Chinese Academy of Sciences, Key Laboratory of Renewable Energy and Gas Hydrates, Guangzhou Institute of Energy Conversion (China)

2012-03-15

The monolayer Al{sub 2}O{sub 3}:Ag thin films were prepared by magnetron sputtering. The microstructure and optical properties of thin film after annealing at 700 Degree-Sign C in air were characterized by transmission electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and spectrophotometer. It revealed that the particle shape, size, and distribution across the film were greatly changed before and after annealing. The surface plasmon resonance absorption and thermal stability of the film were found to be strongly dependent on the film thickness, which was believed to be associated with the evolution process of particle diffusion, agglomeration, and evaporation during annealing at high temperature. When the film thickness was smaller than 90 nm, the film SPR absorption can be attenuated until extinct with increasing annealing time due to the evaporation of Ag particles. While the film thickness was larger than 120 nm, the absorption can keep constant even after annealing for 64 h due to the agglomeration of Ag particles. On the base of film thickness results, the multilayer Al{sub 2}O{sub 3}:Ag solar selective thin films were prepared and the thermal stability test illustrated that the solar selectivity of multilayer films with absorbing layer thickness larger than 120 nm did not degrade after annealing at 500 Degree-Sign C for 70 h in air. It can be concluded that film thickness is an important factor to control the thermal stability of Al{sub 2}O{sub 3}:Ag thin films as high-temperature solar selective absorbers.

Thickness, morphology, and optoelectronic characteristics of pristine and surfactant-modified DNA thin films

International Nuclear Information System (INIS)

Arasu, Velu; Reddy Dugasani, Sreekantha; Son, Junyoung; Gnapareddy, Bramaramba; Ha Park, Sung; Jeon, Sohee; Jeong, Jun-Ho

2017-01-01

Although the preparation of DNA thin films with well-defined thicknesses controlled by simple physical parameters is crucial for constructing efficient, stable, and reliable DNA-based optoelectronic devices and sensors, it has not been comprehensively studied yet. Here, we construct DNA and surfactant-modified DNA thin films by drop-casting and spin-coating techniques. The DNA thin films formed with different control parameters, such as drop-volume and spin-speed at given DNA concentrations, exhibit characteristic thickness, surface roughness, surface potential, and absorbance, which are measured by a field emission scanning electron microscope, a surface profilometer, an ellipsometer, an atomic force microscope, a Kelvin probe force microscope, and an UV–visible spectroscope. From the observations, we realized that thickness significantly affects the physical properties of DNA thin films. This comprehensive study of thickness-dependent characteristics of DNA and surfactant-modified DNA thin films provides insight into the choice of fabrication techniques in order for the DNA thin films to have desired physical characteristics in further applications, such as optoelectronic devices and sensors. (paper)

Thickness-Dependent Surfactant Behavior in Trilayer Polymer Films

Science.gov (United States)

Sun, Yan; Shull, Kenneth; Wang, Jin

2010-03-01

The ability for thin liquid films to wet and remain thermodynamically stable on top of one another is a fundamental challenge in developing high quality paints, coatings, adhesives, and other industrial products. Since intermolecular interactions and interfacial energies dominate in the film thickness regime from tens to hundreds of nanometers, it is desirable to tune these long-range and short-range forces in a simple, controllable manner. Starting from an unstable model homopolymer bilayer (poly(styrene)/poly(4-vinylpyridine)), we demonstrate that sandwiching an additional homopolymer layer (poly(4-bromostyrene)) between the two layers can provide needed surfactancy. As the thickness of this center layer is increased, the full trilayer transitions from unstable (thin) to stable (moderate) to unstable (thick). We experimentally show using x-ray standing waves generated via total external reflection (TER-XSW), atomic force microscopy (AFM), and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) that this behavior can be directly attributed to the autophobic dewetting phenomenon, in which the surfactant layer is thin enough to remain stable but thick enough to shield the neighboring layers, highlighting a general approach to stabilizing multilayer systems.

Kinetics of sub-spinodal dewetting of thin films of thickness dependent viscosity.

Science.gov (United States)

Kotni, Tirumala Rao; Khanna, Rajesh; Sarkar, Jayati

2017-05-04

An alternative explanation of the time varying and very low growth exponents in dewetting of polymer films like polystyrene films is presented based on non-linear simulations. The kinetics of these films is explored within the framework of experimentally observed thickness dependent viscosity. These films exhibit sub-spinodal dewetting via formation of satellite holes in between primary dewetted holes under favorable conditions of excess intermolecular forces and film thicknesses. We find that conditions responsible for sub-spinodal dewetting concurrently lead to remarkable changes in the kinetics of dewetting of even primary holes. For example, the radius of the hole grows in time with a power-law growth exponent sequence of [Formula: see text], in contrast to the usual  ∼4/5. This is due to the cumulative effect of reduced rim mobility due to thickness dependent viscosity and hindrance created by satellite holes.

Gilbert damping constant of FePd alloy thin films estimated by broadband ferromagnetic resonance

Directory of Open Access Journals (Sweden)

Kawai T.

2014-07-01

Full Text Available Magnetic relaxation of FePd alloy epitaxial thin films with very flat surfaces prepared on MgO(001 substrate are measured by in-plane broadband ferromagnetic resonance (FMR. Magnetic relaxation is investigated as Δω for FMR absorption peak by frequency sweep measurements. ΔH is calculated by using the measured Δω. Gilbert damping constant, α, is estimated by employing a straight line fitting of the resonant frequency dependence of ΔH. The α value for an FePd film deposited at 200 ˚C, which shows disordered A1 structure, is 0.010 and ΔH0, which is frequency independent part of ΔH, is 10 Oe. The α value for a film annealed at 400 ˚C, which shows partially L10 ordered structure (S=0.32, is 0.013, which is slightly larger than that for the disorder A1 structure film. However, ΔH0 for the annealed film is 85 Oe, which is much larger than that for the film with disordered structure. The results show that the magnetic relaxation of the 400 ˚C annealed film is mainly dominated by ΔH0, which is related with magnetic in-homogeneity caused by the appearance of perpendicular anisotropy of partially ordered phase.

Observation of Room-Temperature Magnetoresistance in Monolayer MoS2 by Ferromagnetic Gating.

Science.gov (United States)

Jie, Wenjing; Yang, Zhibin; Zhang, Fan; Bai, Gongxun; Leung, Chi Wah; Hao, Jianhua

2017-07-25

Room-temperature magnetoresistance (MR) effect is observed in heterostructures of wafer-scale MoS 2 layers and ferromagnetic dielectric CoFe 2 O 4 (CFO) thin films. Through the ferromagnetic gating, an MR ratio of -12.7% is experimentally achieved in monolayer MoS 2 under 90 kOe magnetic field at room temperature (RT). The observed MR ratio is much higher than that in previously reported nonmagnetic metal coupled with ferromagnetic insulator, which generally exhibited MR ratio of less than 1%. The enhanced MR is attributed to the spin accumulation at the heterostructure interface and spin injection to the MoS 2 layers by the strong spin-orbit coupling effect. The injected spin can contribute to the spin current and give rise to the MR by changing the resistance of MoS 2 layers. Furthermore, the MR effect decreases as the thickness of MoS 2 increases, and the MR ratio becomes negligible in MoS 2 with thickness more than 10 layers. Besides, it is interesting to find a magnetic field direction dependent spin Hall magnetoresistance that stems from a combination of the spin Hall and the inverse spin Hall effects. Our research provides an insight into exploring RT MR in monolayer materials, which should be helpful for developing ultrathin magnetic storage devices in the atomically thin limit.

Ferromagnetism of Pd(001) substrate induced by antiferromagnetic CoO

Energy Technology Data Exchange (ETDEWEB)

Saha, Srijan Kumar, E-mail: sksaha@mpi-halle.mpg.de; Stepanyuk, Valeri S.; Kirschner, Jürgen

2014-11-14

Our first-principles study has revealed unexpected spin polarization of the Pd(001) substrate in contact with antiferromagnetic CoO overlayers. We give an evidence that the ferromagnetism of Pd is caused by the zigzag positions of Co atoms with respect to the Pd interface, resulted from the lattice-mismatch driven structural relaxation. Because of the itinerant nature of its 4d electrons, we see that the ferromagnetic properties of Pd are highly sensitive to the local environment and can be enhanced further by increasing the thickness of CoO overlayer film or/and by applying an additional uniaxial pressure along c-axis exerted externally on the bottom layers of the Pd substrate. Our finding provides new functionality for the interfacial moments of the CoO/Pd system, which can be accessed experimentally, e.g., by the magneto-optical Kerr effect (MOKE) or/and by element-resolved X-ray magnetic circular dichroism (XMCD) measurement.

Ferromagnetism of Pd(001) substrate induced by antiferromagnetic CoO

Science.gov (United States)

Saha, Srijan Kumar; Stepanyuk, Valeri S.; Kirschner, Jürgen

2014-11-01

Our first-principles study has revealed unexpected spin polarization of the Pd(001) substrate in contact with antiferromagnetic CoO overlayers. We give an evidence that the ferromagnetism of Pd is caused by the zigzag positions of Co atoms with respect to the Pd interface, resulted from the lattice-mismatch driven structural relaxation. Because of the itinerant nature of its 4d electrons, we see that the ferromagnetic properties of Pd are highly sensitive to the local environment and can be enhanced further by increasing the thickness of CoO overlayer film or/and by applying an additional uniaxial pressure along c-axis exerted externally on the bottom layers of the Pd substrate. Our finding provides new functionality for the interfacial moments of the CoO/Pd system, which can be accessed experimentally, e.g., by the magneto-optical Kerr effect (MOKE) or/and by element-resolved X-ray magnetic circular dichroism (XMCD) measurement.

Ceramic thick film humidity sensor based on MgTiO3 + LiF

International Nuclear Information System (INIS)

Kassas, Ahmad; Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand; Lakiss, Hassan; Hamieh, Tayssir

2013-01-01

Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO 3 + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO 3 /LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time

Influence of Liquid Petroleum Gas on the Electrical Parameters of the WO3 Thick Film

Directory of Open Access Journals (Sweden)

R. S. KHADAYATE

2007-02-01

Full Text Available In this work, the WO3 thick films were prepared by standard screen-printing technology. These films were characterized by x-ray diffraction (XRD measurements and scanning electron microscopy (SEM. Influence of LPG on the electrical properties of the prepared WO3 thick film is reported. It was observed that the slope of the Arrhenius curves of the WO3 thick film decreased as the medium changed from pure air to 100 ppm LPG in air. From I-V characteristics, it was observed that the WO3 thick film exhibit highest sensitivity to 50 ppm LPG in air at 400oC.

A method for reducing the sloughing of thick blood films for malaria diagnosis.

Science.gov (United States)

Norgan, Andrew P; Arguello, Heather E; Sloan, Lynne M; Fernholz, Emily C; Pritt, Bobbi S

2013-07-08

The gold standard for malaria diagnosis is the examination of thick and thin blood films. Thick films contain 10 to 20 times more blood than thin films, correspondingly providing increased sensitivity for malaria screening. A potential complication of thick film preparations is sloughing of the blood droplet from the slide during staining or rinsing, resulting in the loss of sample. In this work, two methods for improving thick film slide adherence ('scratch' (SCM) and 'acetone dip' (ADM) methods) were compared to the 'standard method' (SM) of thick film preparation. Standardized blood droplets from 26 previously examined EDTA whole blood specimens (22 positive and four negative) were concurrently spread on glass slides using the SM, ADM, and SCM. For the SM and ADM prepared slides, the droplet was gently spread to an approximate 22 millimeters in diameter spot on the slide using the edge of a second glass slide. For the SCM, the droplet was spread by carefully grinding (or scratching) it into the slide with the point of a second glass slide. Slides were dried for one hour in a laminar flow hood. For the ADM, slides were dipped once in an acetone filled Coplin jar and allowed to air dry. All slides were then Giemsa-stained and examined in a blinded manner. Adherence was assessed by blinded reviewers. No significant or severe defects were observed for slides prepared with the SCM. In contrast, 8 slides prepared by the ADM and 3 prepared using the SM displayed significant or severe defects. Thick films prepared by the three methods were microscopically indistinguishable and concordant results (positive or negative) were obtained for the three methods. Estimated parasitaemia of the blood samples ranged from 25 to 429,169 parasites/μL of blood. The SCM is an inexpensive, rapid, and simple method that improves the adherence of thick blood films to standard glass slides without altering general slide preparation, microscopic appearance or interpretability. Using the SCM

Simultaneous reflectometry and interferometry for measuring thin-film thickness and curvature

Science.gov (United States)

Arends, A. A.; Germain, T. M.; Owens, J. F.; Putnam, S. A.

2018-05-01

A coupled reflectometer-interferometer apparatus is described for thin-film thickness and curvature characterization in the three-phase contact line region of evaporating fluids. Validation reflectometry studies are provided for Au, Ge, and Si substrates and thin-film coatings of SiO2 and hydrogel/Ti/SiO2. For interferometry, liquid/air and solid/air interferences are studied, where the solid/air samples consisted of glass/air/glass wedges, cylindrical lenses, and molded polydimethylsiloxane lenses. The liquid/air studies are based on steady-state evaporation experiments of water and isooctane on Si and SiO2/Ti/SiO2 wafers. The liquid thin-films facilitate characterization of both (i) the nano-scale thickness of the absorbed fluid layer and (ii) the macro-scale liquid meniscus thickness, curvature, and curvature gradient profiles. For our validation studies with commercial lenses, the apparatus is shown to measure thickness profiles within 4.1%-10.8% error.

Characterization and comparison of thermistor thick films. Topical report

International Nuclear Information System (INIS)

Gehman, R.W.

1981-09-01

Four thermistor thick film inks were evaluated for HMC production use. The physical, chemical and electrical properties of the wet inks and fired films were measured. Variations in the physical and chemical properties of the inks were used to explain variations in thermistor electrical resistance and temperature coefficient of resistance

Influence of colorant and film thickness on thermal aging characteristics of oxo-biodegradable plastic bags

Science.gov (United States)

Leuterio, Giselle Lou D.; Pajarito, Bryan B.; Domingo, Carla Marie C.; Lim, Anna Patricia G.

2016-05-01

Functional, lightweight, strong and cheap plastic bags incorporated with pro-oxidants undergo accelerated degradation under exposure to heat and oxygen. This work investigated the effect of colorant and film thickness on thermal aging characteristics of commercial oxo-biodegradable plastic bag films at 70 °C. Degradation is monitored through changes in infrared absorption, weight, and tensile properties of thermally aged films. The presence of carbonyl band in infrared spectrum after 672 h of thermal aging supports the degradation behavior of exposed films. Results show that incorporation of colorant and increasing thickness exhibit low maximum weight uptake. Titanium dioxide as white colorant in films lowers the susceptibility of films to oxygen uptake but enhances physical degradation. Higher amount of pro-oxidant loading also contributes to faster degradation. Opaque films are characterized by low tensile strength and high elastic modulus. Decreasing the thickness contributes to lower tensile strength of films. Thermally aged films with colorant and low thickness promote enhanced degradation.

Thickness control in electrophoretic deposition of WO{sub 3} nanofiber thin films for solar water splitting

Energy Technology Data Exchange (ETDEWEB)

Fang, Yuanxing; Lee, Wei Cheat; Canciani, Giacomo E.; Draper, Thomas C.; Al-Bawi, Zainab F. [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom); Bedi, Jasbir S. [School of Public Health & Zoonoses, Guru Angad Dev Veterinary and Animal Sciences University, Ludhiana 141004 Punjab (India); Perry, Christopher C. [Division of Biochemistry, School of Medicine, Loma Linda University, Loma Linda, CA 92350 (United States); Chen, Qiao, E-mail: qiao.chen@sussex.ac.uk [Department of Chemistry, School of Life Sciences, University of Sussex, Brighton BN1 9QJ (United Kingdom)

2015-12-15

Graphical abstract: - Highlights: • A novel method combining electrospinning and electrophoretic deposition was established for the creation of nanostructured semiconductor thin films. • The created thin films displayed a high chemical stability with a controllable thickness. • The PEC water splitting performance of the thin films was optimized by fine-tuning the thickness of the films. • A maximum photoconversion efficiency was achieved by 18 μm nanofibrous thin films. - Abstract: Electrophoretic deposition (EPD) of ground electrospun WO{sub 3} nanofibers was applied to create photoanodes with controlled morphology for the application of photoelectrochemical (PEC) water splitting. The correlations between deposition parameters and film thicknesses were investigated with theoretical models to precisely control the morphology of the nanostructured porous thin film. The photoconversion efficiency was further optimized as a function of film thickness. A maximum photoconversion efficiency of 0.924% from electrospun WO{sub 3} nanofibers that EPD deposited on a substrate was achieved at a film thickness of 18 μm.

Multifunctional thick-film structures based on spinel ceramics for environment sensors

Energy Technology Data Exchange (ETDEWEB)

Vakiv, M; Hadzaman, I; Klym, H; Shpotyuk, O [Institute of Materials of SRC ' Carat' , 202 Stryjska str., Lviv, 79031 (Ukraine); Brunner, M, E-mail: shpotyuk@novas.lviv.ua, E-mail: klymha@yahoo.com [Fachhochschule Koeln/University of Applied Sciences, 2 Betzdorfer str., Koeln, 50679 (Germany)

2011-04-01

Temperature sensitive thick films based on spinel-type NiMn{sub 2}O{sub 4}-CuMn{sub 2}O{sub 4}-MnCo{sub 2}O{sub 4} manganites with p- and p{sup +}-types of electrical conductivity and their multilayer p{sup +}-p structures were studied. These thick-film elements possess good electrophysical characteristics before and after long-term ageing test at 170 deg. C. It is shown that degradation processes connected with diffusion of metallic Ag into film grain boundaries occur in one-layer p-and p{sup +}-conductive films. Some part of the p{sup +}-p structures were of high stability, the relative electrical drift being no more than 1 %.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Pryds, N. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)]. E-mail: nini.pryds@risoe.dk; Toftmann, B. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Bilde-Sorensen, J.B. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark); Schou, J. [Department of Optics and Plasma Research, Riso National Laboratory, DK-4000 Roskilde (Denmark); Linderoth, S. [Materials Research Department, Riso National Laboratory, DK-4000 Roskilde (Denmark)

2006-04-30

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced.

Thickness determination of large-area films of yttria-stabilized zirconia produced by pulsed laser deposition

International Nuclear Information System (INIS)

Pryds, N.; Toftmann, B.; Bilde-Sorensen, J.B.; Schou, J.; Linderoth, S.

2006-01-01

Films of yttria-stabilized zirconia (YSZ) on a polished silicon substrate of diameter up to 125 mm have been produced in a large-area pulsed laser deposition (PLD) setup under typical PLD conditions. The film thickness over the full film area has been determined by energy-dispersive X-ray spectrometry in a scanning electron microscope (SEM) with use of a method similar to one described by Bishop and Poole. The attenuation of the electron-induced X-rays from the Si wafer by the film was monitored at a number of points along a diameter and the thickness was determined by Monte Carlo simulations of the attenuation for various values of film thickness with the program CASINO. These results have been compared with direct measurements in the SEM of the film thickness on a cross-section on one of the wafers. The results of these measurements demonstrate the ability of this technique to accurately determine the thickness of a large film, i.e. up to diameters of 125 mm, in a relatively short time, without destroying the substrate, without the need of a standard sample and without the need of a flat substrate. We have also demonstrated that by controlling the deposition parameters large-area YSZ films with uniform thickness can be produced

Micro-machined high-frequency (80 MHz) PZT thick film linear arrays.

Science.gov (United States)

Zhou, Qifa; Wu, Dawei; Liu, Changgeng; Zhu, Benpeng; Djuth, Frank; Shung, K

2010-10-01

This paper presents the development of a micromachined high-frequency linear array using PZT piezoelectric thick films. The linear array has 32 elements with an element width of 24 μm and an element length of 4 mm. Array elements were fabricated by deep reactive ion etching of PZT thick films, which were prepared from spin-coating of PZT sol-gel composite. Detailed fabrication processes, especially PZT thick film etching conditions and a novel transferring-and-etching method, are presented and discussed. Array designs were evaluated by simulation. Experimental measurements show that the array had a center frequency of 80 MHz and a fractional bandwidth (-6 dB) of 60%. An insertion loss of -41 dB and adjacent element crosstalk of -21 dB were found at the center frequency.

Indium-Nitrogen Codoped Zinc Oxide Thin Film Deposited by Ultrasonic Spray Pyrolysis on n-(111 Si Substrate: The Effect of Film Thickness

Directory of Open Access Journals (Sweden)

Cheng-Chang Yu

2014-01-01

Full Text Available Indium-nitrogen codoped zinc oxide (INZO thin films were fabricated by spray pyrolysis deposition technique on n-(111 Si substrate with different film thicknesses at 450°C using a precursor containing zinc acetate, ammonium acetate, and indium nitrate with 1 : 3 : 0.05 at.% concentration. The morphology and structure studies were carried out by scanning electron microscopy (SEM and X-ray diffraction (XRD. The grain size of the films increased when increasing the film thickness. From XRD spectra, polycrystalline ZnO structure can be observed and the preferred orientation behavior varied from (002 to (101 as the film thickness increased. The concentration and mobility were investigated by Hall effect measurement. the p-type films with a hole mobility around 3 cm2V−1s−1 and hole concentration around 3×1019 cm−3 can be achieved with film thickness less than 385 nm. The n-type conduction with concentration 1×1020 cm−3 is observed for film with thickness 1089 nm. The defect states were characterized by photoluminescence. With temperature-dependent conductivity analysis, acceptor state with activation energy 0.139 eV dominate the p type conduction for thin INZO film. And the Zn-related shallow donors with activation energy 0.029 eV dominate the n-type conduction for the thick INZO film.

Comparison of functional parameters of CsI:Tl crystals and thick films

International Nuclear Information System (INIS)

Fedorov, A.; Gektin, A.; Lebedynskiy, A.; Mateychenko, P.; Shkoropatenko, A.

2013-01-01

500 mkm thick CsI:Tl columnar films can be produced using thermal evaporation in vacuum by sublimation of the same bulk crystal. Comparison of afterglow and radiation stability of deposited CsI:Tl films with source crystal was the aim of current work. It is shown that the afterglow in the films is always below its level in initial single crystal. It was ascertained that the annealing atmospheres influence the processes leading to the activator depletion of the films during the thermal processing. -- Highlights: ► Thick CsI:Tl columnar films were obtained by thermal evaporation in vacuum. ► Radiation stability of such CsI:Tl films appears to be better than that of crystal. ► CsI:Tl film parameters can be modified by annealing in different atmospheres

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Energy Technology Data Exchange (ETDEWEB)

Ding, Guowen, E-mail: gding@intermolecular.com; Clavero, César; Schweigert, Daniel; Le, Minh [Intermolecular, Inc., 3011 North First Street, San Jose, CA 95134 (United States)

2015-11-15

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Structural, magnetic and transport properties of Co2FeAl Heusler films with varying thickness

International Nuclear Information System (INIS)

Wang, Xiaotian; Li, Yueqing; Du, Yin; Dai, Xuefang; Liu, Guodong; Liu, Enke; Liu, Zhongyuan; Wang, Wenhong; Wu, Guangheng

2014-01-01

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co 2 FeAl (CFA) epitaxial films on MgO (001), as a function of film thickness. It was found that the epitaxial CFA films show a highly ordered B2 structure with an in-plane uniaxial magnetic anisotropy. The electrical transport properties reveal that the lattice and magnon scattering contributions to the longitudinal resistivity. Independent on the thickness of films, the anomalous Hall resistivity of CFA films is found to be dominated by skew scattering only. Moreover, the anomalous Hall resistivity shows weakly temperature dependent behavior, and its absolute value increases as the thickness decreases. We attribute this temperature insensitivity in the anomalous Hall resistivity to the weak temperature dependent of tunneling spin-polarization in the CFA films, while the thickness dependence behavior is likely due to the increasing significance of interface or free surface electronic states. - Highlights: ●Highly ordered CFA films with various thicknesses were prepared on MgO substrates. ●The magnon scattering contributions to the longitudinal resistivity in the CFA films. ●The anomalous Hall resistivity of the CFA films shows weakly temperature dependent. ●The CFA films show weak temperature dependent of tunneling spin-polarization

Thickness-Dependent Order-to-Order Transitions of Bolaform-like Giant Surfactant in Thin Films

Energy Technology Data Exchange (ETDEWEB)

Hsu, Chih-Hao; Yue, Kan; Wang, Jing; Dong, Xue-Hui; Xia, Yanfeng; Jiang, Zhang [X-ray; Thomas, Edwin L. [Department; Cheng, Stephen Z. D.

2017-09-07

Controlling self-assembled nanostructures in thin films allows the bottom-up fabrication of ordered nanoscale patterns. Here we report the unique thickness-dependent phase behavior in thin films of a bolaform-like giant surfactant, which consists of butyl- and hydroxyl-functionalized polyhedral oligomeric silsesquioxane (BPOSS and DPOSS) cages telechelically located at the chain ends of a polystyrene (PS) chain with 28 repeating monomers on average. In the bulk, BPOSS-PS28-DPOSS forms a double gyroid (DG) phase. Both grazing incidence small angle X-ray scattering and transmission electron microscopy techniques are combined to elucidate the thin film structures. Interestingly, films with thicknesses thinner than 200 nm exhibit an irreversible phase transition from hexagonal perforated layer (HPL) to compressed hexagonally packed cylinders (c-HEX) at 130 °C, while films with thickness larger than 200 nm show an irreversible transition from HPL to DG at 200 °C. The thickness-controlled transition pathway suggests possibilities to obtain diverse patterns via thin film self-assembly.

Study of electronic structure and magnetic properties of epitaxial Co{sub 2}FeAl Heusler Alloy Thin Films

Energy Technology Data Exchange (ETDEWEB)

Soni, S. [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Dalela, S., E-mail: sdphysics@rediffmail.com [Department of Pure & Applied Physics, University of Kota, Kota 324007 (India); Sharma, S.S. [Department of Physics, Govt. Women Engineering College, Ajmer (India); Liu, E.K.; Wang, W.H.; Wu, G.H. [State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Kumar, M. [Department of Physics, Malviya National Institute of Technology, Jaipur-302017 (India); Garg, K.B. [Department of Physics, University of Rajasthan, Jaipur-302004 (India)

2016-07-25

This work reports the magnetic and electronic characterization of plane magnetized buried Heusler Co{sub 2}FeAl nano thin films of different thickness by X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD) measurements. . The spectra on both Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence, corresponding to a ferromagnetically-aligned moments on Fe and Co atoms conditioning the peculiar characteristics of the Co{sub 2}FeAl Heusler compound (a half-metallic ferromagnet). The detailed knowledge of the related magnetic and electronic properties of these samples over a wide range of thickness of films are indispensable for achieving a higher tunnel magnetoresistance ratio, and thus for spintronics device applications. - Highlights: • Electronic structure and Magnetic Properties of Epitaxial Co{sub 2}FeAl Heusler Films. • X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (XMCD). • Fe- and Co L{sub 2,3} edges show a pronounced magnetic dichroic signal in remanence. • Calculated Orbital, Spin and total magnetic moments of Fe and Co for 30 nm Co{sub 2}FeAl thin film. • The total magnetic moment of Fe at L{sub 2,3} edges increases with the thickness of the Co2FeAl films.

Improved high-frequency soft magnetic properties of FeCo films on organic ferroelectric PVDF substrate

Energy Technology Data Exchange (ETDEWEB)

Li, Dong; Wang, Zhen; Han, Xuemeng; Li, Yue; Guo, Xiaobin; Zuo, Yalu; Xi, Li, E-mail: xili@lzu.edu.cn

2015-02-01

FeCo films with various thicknesses were fabricated by direct-current magnetron sputtering on corning glass and organic ferroelectric PVDF substrates at the same time with 5 nm Ru seed layer and 5 nm Ta protective layer. The in-plane uniaxial anisotropy field of FeCo on glass substrate increases from 24 to 36 Oe with the increase of FeCo film thickness from 5 to 100 nm. However, a large in-plane anisotropy field of FeCo on PVDF substrate increases with FeCo thickness from 5 to 20 nm and gradually decreases with the FeCo thickness further increasing. Atomic force microscope images of FeCo on glass show quite smooth surface with root-mean-square roughness around 0.5 nm and have none visible granules on the surface for all samples. While, AFM images of FeCo on PVDF show quite rough surface with RMS roughness around 25 nm and have visible granules with the smallest granules appearing at the FeCo thickness of 20 nm. The permeability spectra show the typical ferromagnetic resonance phenomenon and can be well fitted by the LLG equation with the obtained experimental parameters. The ferromagnetic resonance frequency can reach 7.0 GHz for the 20 nm FeCo film on PVDF. Moreover, the quality factor of this sample can respectively reach 26, 12 and 7 at 1.0, 2.0, and 3.0 GHz, indicating the potential real 3G application for high-frequency devices. - Highlights: 1.Magnetic and morphological properties of FeCo films on PVDF substrates are studied. 2.The large anisotropy field of FeCo films on PVDF is obtained. 3.Improved high frequency properties of FeCo films on flexible substrates are obtained. 4.The origin of improved high frequency properties of FeCo films on PVDF is studied.

Critical current density and microstructure of YBa2Cu3O7-x films as a function of film thickness

International Nuclear Information System (INIS)

Mogro-Campero, A.; Turner, L.G.; Hall, E.L.; Lewis, N.

1990-01-01

Thin films of nominal composition YBa 2 Cu 3 O 7-x (YBCO) were produced on (100) SrTiO 3 substrates by coevaporation and furnace annealing. Film thicknesses in the range of 0.2 to 2.4 μm were analyzed. Microstructural investigations by cross sectional transmission electron microscopy (TEM) reveal a continuous layer of about 0.4 μm thickness adjacent to the substrate with c-axis normal to the substrate plane. In thicker films the remaining top portion has the c-axis in the film plane. The critical current density (J c ) at 77 K decreases with increasing thickness in the thickness range exceeding 0.4 μm, qualitatively consistent with the microstructural observation, but quantitatively inconsistent with a simple model based on the microstructural data

Appearance and disappearance of ferromagnetism in ultrathin LaMnO3 on SrTiO3 substrate: A viewpoint from first principles

Science.gov (United States)

An, Ming; Weng, Yakui; Zhang, Huimin; Zhang, Jun-Jie; Zhang, Yang; Dong, Shuai

2017-12-01

The intrinsic magnetic state (ferromagnetic or antiferromagnetic) of ultrathin LaMnO3 films on the most commonly used SrTiO3 substrate is a long-existing question under debate. Either strain effect or nonstoichiometry was argued to be responsible for the experimental ferromagnetism. In a recent experiment [X. R. Wang, C. J. Li, W. M. Lü, T. R. Paudel, D. P. Leusink, M. Hoek, N. Poccia, A. Vailionis, T. Venkatesan, J. M. D. Coey, E. Y. Tsymbal, Ariando, and H. Hilgenkamp, Science 349, 716 (2015), 10.1126/science.aaa5198], one more mechanism, namely, the self-doping due to polar discontinuity, was argued to be the driving force of ferromagnetism beyond the critical thickness. Here systematic first-principles calculations have been performed to check these mechanisms in ultrathin LaMnO3 films as well as superlattices. Starting from the very precise descriptions of both LaMnO3 and SrTiO3, it is found that the compressive strain is the dominant force for the appearance of ferromagnetism, while the open surface with oxygen vacancies leads to the suppression of ferromagnetism. Within LaMnO3 layers, the charge reconstructions involve many competitive factors and certainly go beyond the intuitive polar catastrophe model established for LaAlO3/SrTiO3 heterostructures. Our paper not only explains the long-term puzzle regarding the magnetism of ultrathin LaMnO3 films but also sheds light on how to overcome the notorious magnetic dead layer in ultrathin manganites.

Measurements of ultrafast spin-profiles and spin-diffusion properties in the domain wall area at a metal/ferromagnetic film interface.

Science.gov (United States)

Sant, T; Ksenzov, D; Capotondi, F; Pedersoli, E; Manfredda, M; Kiskinova, M; Zabel, H; Kläui, M; Lüning, J; Pietsch, U; Gutt, C

2017-11-08

Exciting a ferromagnetic material with an ultrashort IR laser pulse is known to induce spin dynamics by heating the spin system and by ultrafast spin diffusion processes. Here, we report on measurements of spin-profiles and spin diffusion properties in the vicinity of domain walls in the interface region between a metallic Al layer and a ferromagnetic Co/Pd thin film upon IR excitation. We followed the ultrafast temporal evolution by means of an ultrafast resonant magnetic scattering experiment in surface scattering geometry, which enables us to exploit the evolution of the domain network within a 1/e distance of 3 nm to 5 nm from the Al/FM film interface. We observe a magnetization-reversal close to the domain wall boundaries that becomes more pronounced closer to the Al/FM film interface. This magnetization-reversal is driven by the different transport properties of majority and minority carriers through a magnetically disordered domain network. Its finite lateral extension has allowed us to measure the ultrafast spin-diffusion coefficients and ultrafast spin velocities for majority and minority carriers upon IR excitation.

Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

Science.gov (United States)

Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard

2015-01-01

Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.

Magnetic and Transport Properties of Heterostructured Films of Prussian Blue Analogues and Manganites

Science.gov (United States)

Quintero, P. A.; Jeen, H.; Knowles, E. S.; Biswas, A.; Meisel, M. W.; Andrus, M. J.; Talham, D. R.

2011-03-01

The magnetic and transport properties of heterostructured films consisting of Prussian blue analogues, Aj M' k [M(CN)6 ]l . n H2 O (M' M-PBA), where A is an alkali ion and M' ,M are transition metals, and manganites have been studied. Specifically, NiCr-PBA and CoFe-PBA films of ~ 100 ~nm thickness have been deposited on perovskite (La 1-y Pr y)0.67 Ca 0.33 Mn O3 (LPCMO) manganese films of ~ 30 ~nm thickness. The effect of the ferromagnetic NiCr-PBA, Tc ~ 70 ~K, and the photo-controllable ferrimagnetic CoFe-PBA, Tc ~ 20 ~K, on the I-V properties of the LPCMO will be reported, where special attention will be given to the changes of the transition temperatures of the ferromagnetic metallic (FMM) and the charge-ordered insulating (COI) phases in the LPCMO substrate. ** Supported by NSF DMR-0701400 (MWM), DMR-0804452 (AB), DMR-1005581 (DRT), DMR-0654118 (NHMFL), and by scholarship from the Organization of American States (PAQ). D.M.~Pajerowski et al., J.~Am.~Chem. Soc. 132 (2010) 4058.

Effects of rework on adhesion of Pb-In soldered gold thick films

International Nuclear Information System (INIS)

Gehman, R.W.; Becka, G.A.; Losure, J.A.

1982-02-01

The feasibility of repeatedly reworking Pb-In soldered joints on gold thick films was evaluated. Nailhead adhesion tests on soldered thick films typically resulted in failure within the bulk solder (50 In-50 Pb). Average strengths increased with each rework, and the failure mode changed. An increase in metalization lift-off occurred with successive reworks. An investigation was initiated to determine why these changes occurred. Based on this work, the thick film adhesion to the substrate appeared to be lowered by indium reduction of cadmium oxide and by formation of a weak, brittle intermetallic compound, Au 9 In 4 . It was concluded that two solder reworks could be conducted without significant amounts of metallization lift-off during nailhead testing

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of ultrathin block copolymer films.

Science.gov (United States)

Huang, Changchun; Wen, Gangyao; Li, Jingdan; Wu, Tao; Wang, Lina; Xue, Feifei; Li, Hongfei; Shi, Tongfei

2016-09-15

Effects of copolymer composition, film thickness, and solvent vapor annealing time on dewetting of spin-coated polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA) films (dewetting of the films with different thicknesses occur via the spinodal dewetting and the nucleation and growth mechanisms, respectively. The PS-b-PMMA films rupture into droplets which first coalesce into large ones to reduce the surface free energy. Then the large droplets rupture into small ones to increase the contact area between PMMA blocks and acetone molecules resulting from ultimate migration of PMMA blocks to droplet surface, which is a novel dewetting process observed in spin-coated films for the first time. Copyright © 2016 Elsevier Inc. All rights reserved.

Influence of substrate and film thickness on polymer LIPSS formation

Energy Technology Data Exchange (ETDEWEB)

Cui, Jing; Nogales, Aurora; Ezquerra, Tiberio A. [Instituto de Estructura de la Materia (IEM-CSIC), Serrano 121, Madrid 28006 (Spain); Rebollar, Esther, E-mail: e.rebollar@csic.es [Instituto de Química Física Rocasolano (IQFR-CSIC), Serrano 119, Madrid 28006 (Spain)

2017-02-01

Highlights: • The estimation of temperature upon pulse accumulation shows that a small positive offset is caused by each individual pulse. • Number of pulses needed for LIPSS formation in PS thin films depends on polymer thickness. • Thermal conductivity and diffusivity of supporting substrate influence the onset for LIPSS formation and their quality. • Quality of LIPSS is affected by the substrate optical properties. - Abstract: Here we focus on the influence of both, substrate and film thickness on polymer Laser Induced Periodic Surface Structures (LIPSS) formation in polymer films. For this aim a morphological description of ripples structures generated on spin-coated polystyrene (PS) films by a linearly polarized laser beam with a wavelength of 266 nm is presented. The influence of different parameters on the quality and characteristics of the formed laser-induced periodic surface structures (LIPSS) was investigated. We found that well-ordered LIPSS are formed either on PS films thinner than 200 nm or thicker than 400 nm supported on silicon substrates as well as on thicker free standing films. However less-ordered ripples are formed on silicon supported films with intermediate thicknesses in the range of 200–380 nm. The effect of the thermal and optical properties of the substrate on the quality of LIPSS was analyzed. Differences observed in the fluence and number of pulses needed for the onset of surface morphological modifications is explained considering two main effects which are: (1) The temperature increase on polymer surface induced by the action of cumulative laser irradiation and (2) The differences in thermal conductivity between the polymer and the substrate which strongly affect the heat dissipation generated by irradiation.

Electron beam curable polymer thick film

International Nuclear Information System (INIS)

Nagata, Hidetoshi; Kobayashi, Takashi

1988-01-01

Currently, most printed circuit boards are produced by the selective etching of copper clads laminated on dielectric substrates such as paper/phenolic resion or nonwoven glass/epoxy resin composites. After the etchig, various components such as transistors and capacitors are mounted on the boards by soldering. But these are troublesome works, therefore, as an alternative, printing method has been investigated recently. In the printing method, conductor circuits and resistors can be made by printing and curing of the specially prepared paste on dielectric substrates. In the near future, also capacitors are made by same method. Usually, conductor paste, resistor paste and dielectric paste are employed, and in this case, the printing is screen printing, and the curing is done thermally. In order to avoid heating and the deterioration of substrates, attention was paid to electron beam curing, and electron beam curable polymer thick film system was developed. The electron beam curable paste is the milled mixture of a filler and an electron beam curable binder of oligomer/monomer. The major advantage of electron beam curable polymer thick film, the typical data of a printed resistor of this type and its trial are reported. (K.I.)

Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

Energy Technology Data Exchange (ETDEWEB)

Khun, N.W. [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Liu, E., E-mail: MEJLiu@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

2011-03-15

Research highlights: {yields} Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. {yields} The graphitization of the films increased with increased film thickness. {yields} The wear resistance of the films increased though their adhesion strength decreased. {yields} The corrosion potentials of the films shifted to more negative values. {yields} However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp{sup 2} bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

Investigation of structure, adhesion strength, wear performance and corrosion behavior of platinum/ruthenium/nitrogen doped diamond-like carbon thin films with respect to film thickness

International Nuclear Information System (INIS)

Khun, N.W.; Liu, E.

2011-01-01

Research highlights: → Sputtered PtRuN-DLC thin films were fabricated with different film thicknesses. → The graphitization of the films increased with increased film thickness. → The wear resistance of the films increased though their adhesion strength decreased. → The corrosion potentials of the films shifted to more negative values. → However, the corrosion currents of the films decreased. - Abstract: In this study, the corrosion performance of platinum/ruthenium/nitrogen doped diamond-like carbon (PtRuN-DLC) thin films deposited on p-Si substrates using a DC magnetron sputtering deposition system in a 0.1 M NaCl solution was investigated using potentiodynamic polarization test in terms of film thickness. The effect of the film thickness on the chemical composition, bonding structure, surface morphology, adhesion strength and wear resistance of the PtRuN-DLC films was studied using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), micro-scratch test and ball-on-disc tribotest, respectively. It was found that the wear resistance of the PtRuN-DLC films apparently increased with increased film thickness though the adhesion strength of the films decreased. The corrosion results revealed that the increased concentration of sp 2 bonds in the PtRuN-DLC films with increased film thickness shifted the corrosion potentials of the films to more negative values but the decreased porosity density in the films significantly decreased the corrosion currents of the films.

Effect of diffusion on percolation threshold in thick-film resistors

International Nuclear Information System (INIS)

Abdurakhmanov, G.

2009-01-01

Resistivity ρ(C) of thick-film resistors doped by metal oxides is simulated as a function of volume content C of the ligature, firing temperature T f and firing time τ. It is proved that the doping of a glass during firing of the thick film resistor is rather uniform. It is shown also, that conductance takes place in the whole volume of the sample, but not through the sole infinite cluster only, even the content of a conductive phase is below than the theoretical percolation threshold value.

Thickness measurement of SiO2 films thinner than 1 nm by X-ray photoelectron spectroscopy

International Nuclear Information System (INIS)

Joong Kim, Kyung; Park, Ki Tae; Lee, Jong Wan

2006-01-01

The thickness measurement of ultra-thin SiO 2 films thinner than 1 nm was studied by X-ray photoelectron spectroscopy (XPS). Amorphous SiO 2 thin films were grown on amorphous Si films to avoid the thickness difference due to the crystalline structure of a substrate. SiO 2 thin films were grown by ion beam sputter deposition under oxygen gas flow and the thickness was measured by in situ XPS. The attenuation length was determined experimentally by a SiO 2 film with a known thickness. The straight line fit between the measured thickness using XPS and the nominal thickness showed a good linear relation with a gradient of 0.969 and a small offset of 0.126 nm. The gradient measured at the range of 3.4-0.28 nm was very close to that measured at sub-nanometer range of 1.13-0.28 nm. This result means that the reliable measurement of SiO 2 film thickness below 1 nm is possible by XPS

Film Thickness and Friction Relationship in Grease Lubricated Rough Contacts

Directory of Open Access Journals (Sweden)

David Gonçalves

2017-08-01

Full Text Available The relationship between the film generation and the coefficient of friction in grease lubricated contacts was investigated. Ball-on-disc tests were performed under different operating conditions: entrainment speed, lubricant temperature and surface roughness. The tests were performed with fully formulated greases and their base oils. The greases were formulated with different thickener types and also different base oils natures and viscosities. Film thickness measurements were performed in ball-on-glass disc tests, and Stribeck curves were measured in ball-on-steel disc tests with discs of different roughness. The role of the thickener and the base oil nature/viscosity on the film thickness and coefficient of friction was addressed and the greases’ performance was compared based on their formulation.

Thickness and roughness measurements of nano thin films by interference

Directory of Open Access Journals (Sweden)

A Sabzalipour

2011-06-01

Full Text Available In the standard optical interference fringes approach, by measuring shift of the interference fringes due to step edge of thin film on substrate, thickness of the layer has already been measured. In order to improve the measurement precision of this popular method, the interference fringes intensity curve was extracted and analyzed before and after the step preparation. By this method, one can measure a few nanometers films thickness. In addition, using the interference fringes intensity curve and its fluctuations, the roughness of surface is measured within a few nanometers accuracy. Comparison of our results with some direct methods of thickness and roughness measurements, i.e. using surface profilemeter and atomic force microscopy confirms the accuracy of the suggested improvements.

Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

Energy Technology Data Exchange (ETDEWEB)

Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa [Korea Atomic Energy Research Institute, Jeongeup (Korea, Republic of); Kim, Jong Il [Chonbuk National University, Jeonju (Korea, Republic of)

2010-06-15

To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 {mu}m) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film.

Effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes

International Nuclear Information System (INIS)

Ko, Beom Seok; Sohn, Joon Yong; Nho, Young Chang; Shin, Jun Hwa; Kim, Jong Il

2010-01-01

To observe the effect of the thickness of a fluoropolymer film on the radiotically prepared fuel cell membranes, fuel cell membranes with various thickness were prepared by simultaneous radiation grafting of styrene into polyethylene-co-tetrafluoroethylene (ETFE) with various thicknesses (25, 50 and 100 μm) and subsequent sulfonation. The physico-chemical properties of the prepared membranes such as ion exchange capacity, water uptake, distribution of sulfonic acid group were evaluated in the correlation with the thickness of ETFE film. In additions, proton conductivity and methanol permeability of the prepared membranes were also evaluated. The results revealed that the proton conductivity and methanol permeability of the prepared membranes were largely affected by the thickness of ETFE film utilized as a base film

Sputtering of Thick Deuterium Films by KeV Electrons

DEFF Research Database (Denmark)

Thestrup Nielsen, Birgitte; Svendsen, Winnie Edith; Schou, Jørgen

1994-01-01

Sputtering of thick films of solid deuterium up to several μm by keV electrons is reported for the first time. The sputtering yield increases within a narrow range of thicknesses around 1.6 μm by about 2 orders of magnitude for 1.5 keV electrons. A similar behavior has not been observed for ion...

The X-ray sensitivity of semi-insulating polycrystalline CdZnTe thick films

International Nuclear Information System (INIS)

Won, Jae Ho; Kim, Ki Hyun; Suh, Jong Hee; Cho, Shin Hang; Cho, Pyong Kon; Hong, Jin Ki; Kim, Sun Ung

2008-01-01

The X-ray sensitivity is one of the important parameters indicating the detector performance. The X-ray sensitivity of semi-insulating polycrystalline CdZnTe:Cl thick films was investigated as a function of electric field, mean photon energy, film thickness, and charge carrier transport parameters and, compared with another promising detector materials. The X-ray sensitivities of the polycrystalline CdZnTe films with 350 μm thickness were about 2.2 and 6.2 μC/cm 2 /R in the ohmic-type and Schottky-type detector at 0.83 V/μm, respectively

Thickness and microstructure effects in the optical and electrical properties of silver thin films

Directory of Open Access Journals (Sweden)

Guowen Ding

2015-11-01

Full Text Available The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C, with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

Study on Gas Sensing Performance of TiO2 Screen Printed Thick Films

Directory of Open Access Journals (Sweden)

C. G. DIGHAVKAR

2009-02-01

Full Text Available Titanium dioxide (TiO2 thick films were prepared on alumina substrate by using screen printing technique. After preparation, the films were fired at temperature range 600 -1000 ºC for two hour. Morphological, compositional and structural properties of the film samples were performed by means of several techniques, including scanning electron microscopy (SEM, Energy dispersive spectroscopy (EDS, X-ray diffraction techniques. We explore the various gases to study the sensing performance of the TiO2 thick films. The maximum response was reported to film fired at 800 0C for LPG gas at 350 0C operating temperature.

Texture change through film thickness and off-axis accommodation of (0 0 2) planes

International Nuclear Information System (INIS)

Shetty, A.R.; Karimi, A.

2011-01-01

We present our recent experimental results on the formation of off-axis texture and crystallographic tilting of crystallites that take place in thin film of transition metal nitrides. For this purpose, the microstructural development of TiAlN film was studied, specially the change in texture with film thickness. Fiber texture was measured using θ-2θ and pole figure X-ray diffraction (XRD), while scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to observe the microstructure and changes in texture with thickness. The sin 2 ψ method was applied to determine the stresses on (1 1 1) and (0 0 2) plane. With deposition parameters chosen, the growth texture mechanism is discussed in three different stages of film growth. Surface energy minimization at low thickness leads to the development of (0 0 2) orientation. On the other hand, the competitive growth promotes the growth of (1 1 1) planes parallel to film surface at higher thickness. However, contrary to the prediction of growth models, the (0 0 2) grains are not completely overlapped by (1 1 1) grains at higher thickness. Rather the (0 0 2) grains still constitute the surface, but are tilted away from the substrate normal showing substantial in-plane alignment to allow the (1 1 1) planes remain parallel to film surface. Intrinsic stress along (1 1 1) and (0 0 2) shows a strong dependence with preferred orientation. The stress level in (0 0 2) grains which was compressive at low thickness changes to tensile at higher thickness. This change in the nature of stress allows the (0 0 2) planes to tilt away in order to promote the growth of 〈1 1 1〉 parallel to film normal and to minimize the overall energy of system due to high compressive stress stored in the (1 1 1) grains. The change in surface morphology with thickness was observed using SEM. An increase in surface roughness with film thickness was observed which indicates the development of (1 1 1) texture parallel to film

Microscopic image processing system for measuring nonuniform film thickness profiles: Image scanning ellipsometry

International Nuclear Information System (INIS)

Liu, A.H.; Plawsky, J.L.; Wayner, P.C. Jr.

1993-01-01

The long-term objective of this research program is to determine the stability and heat transfer characteristics of evaporating thin films. The current objective is to develop and use a microscopic image-processing system (IPS) which has two parts: an image analyzing interferometer (IAI) and an image scanning ellipsometer (ISE). The primary purpose of this paper is to present the basic concept of ISE, which is a novel technique to measure the two dimensional thickness profile of a non-uniform, thin film, from several nm up to several μm, in a steady state as well as in a transient state. It is a full-field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. The ISE was tested by measuring the thickness profile and the refractive index of a nonuniform solid film

Low-temperature technique for thick film resist stabilization and curing

Science.gov (United States)

Minter, Jason P.; Wong, Selmer S.; Marlowe, Trey; Ross, Matthew F.; Narcy, Mark E.; Livesay, William R.

1999-06-01

For a range of thick film photoresist applications, including MeV ion implant processing, thin film head manufacturing, and microelectromechanical systems processing, there is a need for a low-temperature method for resist stabilization and curing. Traditional methods of stabilizing or curing resist films have relied on thermal cycling, which may not be desirable due to device temperature limitations or thermally-induced distortion of the resist features.

Preparation and spectroscopic analysis of zinc oxide nanorod thin films of different thicknesses

Directory of Open Access Journals (Sweden)

Mia Nasrul Haque

2017-10-01

Full Text Available Zinc oxide thin films with different thicknesses were prepared on microscopic glass slides by sol-gel spin coating method, then hydrothermal process was applied to produce zinc oxide nanorod arrays. The nanorod thin films were characterized by various spectroscopic methods of analysis. From the images of field emission scanning electron microscope (FESEM, it was observed that for the film thickness up to 200 nm the formed nanorods with wurtzite hexagonal structure were uniformly distributed over the entire surface substrate. From X-ray diffraction analysis it was revealed that the thin films had good polycrystalline nature with highly preferred c-axis orientation along (0 0 2 plane. The optical characterization done by UV-Vis spectrometer showed that all the films had high transparency of 83 % to 96 % in the visible region and sharp cut off at ultraviolet region of electromagnetic spectrum. The band gap of the films decreased as their thickness increased. Energy dispersive X-ray spectroscopy (EDS showed the presence of zinc and oxygen elements in the films and Fourier transform infrared spectroscopy (FT-IR revealed the chemical composition of ZnO in the film.

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

International Nuclear Information System (INIS)

Prakash, Deo; Shaaban, E.R.; Shapaan, M.; Mohamed, S.H.; Othman, A.A.; Verma, K.D.

2016-01-01

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

Energy Technology Data Exchange (ETDEWEB)

Prakash, Deo [School of Computer Science & Engineering, Faculty of Engineering, SMVD University, Kakryal, Katra 182320, J& K (India); Shaaban, E.R., E-mail: esam_ramadan2008@yahoo.com [Physics Department, Faculty of Science, Al-Azhar University, Assiut 71542 (Egypt); Shapaan, M. [Department of Physics, Faculty of Science, Al-Azahar University, Cairo (Egypt); Mohamed, S.H. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Othman, A.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Verma, K.D., E-mail: kdverma1215868@gmail.com [Material Science Research Laboratory, Department of Physics, S. V. College, Aligarh 202001, U.P. (India)

2016-08-15

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

Orientation and magnetic properties of the thick multilayered [NdFeBxTby]n films

International Nuclear Information System (INIS)

Liu, Weifang; Suzuki, Shunji; Machida, Kenichi

2007-01-01

Multilayered [NdFeB x /Tb y ] n films were prepared by a three-demensional sputtering system. From the thickness of NdFeB layer dependence on the orientation and magnetic properties of multilayered [NdFeB (xμm)/Tb (50nm)] n films with 7.2μm as a total thickness of NdFeB layers, it was found that the orientation of NdFeB grains was maintained. However, the coercivity was enhanced with decreasing the thickness of each NdFeB thin layer. The (BH) max value of 240kJ/m 3 was obtained on the layered [NdFeB (1.2μm)/Tb (50 nm)] 6 film as an optimal value. For the multilayered [NdFeB (1.2μm)/Tb (50 nm)] n films with various multiple layer sets (n), the coercivity value increased with the film thickness without any deterioration of the c-axis texture and consequently, multilayered NdFeB/Tb film magnets with total thickness values around 70μm showed the superior magnetic properties (H cj approx. = 1360kA/m, I r approx.= 1.05T, and (BH) max approx.= 202kJ/m 3 ). (author)

Tuning the antiferromagnetic to ferromagnetic phase transition in FeRh thin films by means of low-energy/low fluence ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Heidarian, A.; Bali, R.; Grenzer, J.; Wilhelm, R.A.; Heller, R.; Yildirim, O.; Lindner, J.; Potzger, K.

2015-09-01

Ion irradiation induced modifications of the thermomagnetic properties of equiatomic FeRh thin films have been investigated. The application of 20 keV Ne{sup +} ions at different fluencies leads to broadening of the antiferromagnetic to ferromagnetic phase transition as well as a shift of the transition temperature towards lower temperatures with increasing ion fluence. Moreover, the ferromagnetic background at low temperatures generated by the ion irradiation leads to pronounced saturation magnetisation at 5 K. Complete erasure of the transition, i.e. ferromagnetic ordering through the whole temperature regime was achieved at a Ne{sup +} fluence of 3 × 10{sup 14} ions/cm{sup 2}. It does not coincide with the complete randomization of the chemical ordering of the crystal lattice.

Synthesis of thick diamond films by direct current hot-cathode plasma chemical vapour deposition

CERN Document Server

Jin Zeng Sun; Bai Yi Zhen; Lu Xian Yi

2002-01-01

The method of direct current hot-cathode plasma chemical vapour deposition has been established. A long-time stable glow discharge at large discharge current and high gas pressure has been achieved by using a hot cathode in the temperature range from 1100 degree C to 1500 degree C and non-symmetrical configuration of the poles, in which the diameter of the cathode is larger than that of anode. High-quality thick diamond films, with a diameter of 40-50 mm and thickness of 0.5-4.2 mm, have been synthesized by this method. Transparent thick diamond films were grown over a range of growth rates between 5-10 mu m/h. Most of the thick diamond films have thermal conductivities of 10-12 W/K centre dot cm. The thick diamond films with high thermal conductivity can be used as a heat sink of semiconducting laser diode array and as a heat spreading and isolation substrate of multichip modules. The performance can be obviously improved

Ceramic thick film humidity sensor based on MgTiO{sub 3} + LiF

Energy Technology Data Exchange (ETDEWEB)

Kassas, Ahmad, E-mail: a.kassas.mcema@ul.edu.lb [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Bernard, Jérôme; Lelièvre, Céline; Besq, Anthony; Guhel, Yannick; Houivet, David; Boudart, Bertrand [Laboratoire Universitaire des Sciences Appliquées de Cherbourg (LUSAC), 50130 Cherbourg-Octeville (France); Lakiss, Hassan [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon); Faculty of Engineering, Section III, Hariri Campus, Hadath, Beirut (Lebanon); Hamieh, Tayssir [Faculty of Agricultural Engineering and Veterinary Medicine, Laboratory of Materials, Catalysis, Environment and Analytical Methods (MCEMA), Faculty of Sciences and Doctoral School of Sciences and Technology (EDST), Lebanese University, Hariri Campus, Hadath, Beirut (Lebanon)

2013-10-15

Graphical abstract: - Highlights: • The fabricated sensor based on MgTiO{sub 3} + LiF materials used the spin coating technology. • The response time is 70 s to detect variation between 5 and 95% relative humidity. • The addition of Scleroglucan controls the viscosity and decreases the roughness of thick film surface. • This humidity sensor is a promising, low-cost, high-quality, reliable ceramic films, that is highly sensitive to humidity. - Abstract: The feasibility of humidity sensor, consisting of a thick layer of MgTiO{sub 3}/LiF materials on alumina substrate, was studied. The thermal analysis TGA-DTGA and dilatometric analysis worked out to confirm the sintering temperature. An experimental plan was applied to describe the effects of different parameters in the development of the thick film sensor. Structural and microstructural characterizations of the developed thick film were made. Rheological study with different amounts of a thickener (scleroglucan “sclg”), showing the behavior variation, as a function of sclg weight % was illustrated and rapprochement with the results of thickness variation as a function of angular velocity applied in the spin coater. The electrical and dielectric measurements confirmed the sensitivity of the elaborated thick film against moisture, along with low response time.

Tape casting and partial melting of Bi-2212 thick films

Energy Technology Data Exchange (ETDEWEB)

Buhl, D.; Lang, T.; Heeb, B. [Nichtmetallische Werkstoffe, Zuerich (Switzerland)] [and others

1994-12-31

To produce Bi-2212 thick films with high critical current densities tape casting and partial melting is a promising fabrication method. Bi-2212 powder and organic additives were mixed into a slurry and tape casted onto glass by the doctor blade tape casting process. The films were cut from the green tape and partially molten on Ag foils during heat treatment. We obtained almost single-phase and well-textured films over the whole thickness of 20 {mu}m. The orientation of the (a,b)-plane of the grains were parallel to the substrate with a misalignment of less than 6{degrees}. At 77K/OT a critical current density of 15`000 A/cm{sup 2} was reached in films of the dimension 1cm x 2cm x 20{mu}m (1{mu}V/cm criterion, resistively measured). At 4K/OT the highest value was 350`000 A/cm{sup 2} (1nV/cm criterion, magnetically measured).

Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO2 thin films deposited by electron beam evaporation technique

International Nuclear Information System (INIS)

Mohanty, P.; Kabiraj, D.; Mandal, R.K.; Kulriya, P.K.; Sinha, A.S.K.; Rath, Chandana

2014-01-01

TiO 2 thin films deposited by electron beam evaporation technique annealed in either O 2 or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O 2 atmosphere. While the pristine film shows a super-paramagnetic behavior, both O 2 and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O 2 annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O 2 annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O 2 annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO 2 film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO 2 films were deposited by e-beam evaporation technique and post annealed under O 2 /Ar at 500 °C. • The pristine film shows SPM behavior where as O 2 and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O 2 annealed film than the Ar annealed one. • The higher M s in O 2 annealed film is attributed to oxygen vacancies as well as crystallinity

The effect of Cr buffer layer thickness on voltage generation of thin-film thermoelectric modules

International Nuclear Information System (INIS)

Mizoshiri, Mizue; Mikami, Masashi; Ozaki, Kimihiro

2013-01-01

The effect of Cr buffer layer thickness on the open-circuit voltage generated by thin-film thermoelectric modules of Bi 0.5 Sb 1.5 Te 3 (p-type) and Bi 2 Te 2.7 Se 0.3 (n-type) materials was investigated. A Cr buffer layer, whose thickness generally needs to be optimized to improve adhesion depending on the substrate surface condition, such as roughness, was deposited between thermoelectric thin films and glass substrates. When the Cr buffer layer was 1 nm thick, the Seebeck coefficients and electrical conductivity of 1 µm thermoelectric thin films with the buffer layers were approximately equal to those of the thermoelectric films without the buffer layers. When the thickness of the Cr buffer layer was 1 µm, the same as the thermoelectric films, the Seebeck coefficients of the bilayer films were reduced by an electrical current flowing inside the Cr buffer layer and the generation of Cr 2 Te 3 . The open-circuit voltage of the thin-film thermoelectric modules decreased with an increase in the thickness of the Cr buffer layer, which was primarily induced by the electrical current flow. The reduction caused by the Cr 2 Te 3 generation was less than 10% of the total voltage generation of the modules without the Cr buffer layers. The voltage generation of thin-film thermoelectric modules could be controlled by the Cr buffer layer thickness. (paper)