Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Pedersen, Steffen Hindborg

2017-01-01

Widespread application of thermoelectric devices for waste heat recovery requires low-cost high-performance materials. The currently available n-type thermoelectric materials are limited either by their low efficiencies or by being based on expensive, scarce or toxic elements. Here we report a low-cost...... because of the multi-valley band behaviour dominated by a unique near-edge conduction band with a sixfold valley degeneracy. This makes Te-doped Mg3Sb1.5Bi0.5 a promising candidate for the low- and intermediate-temperature thermoelectric applications....

Effects of MeV Si ions bombardment on the thermoelectric generator from SiO{sub 2}/SiO{sub 2} + Cu and SiO{sub 2}/SiO{sub 2} + Au nanolayered multilayer films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Chacha, J., E-mail: chacha_john79@hotmail.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Smith, C., E-mail: cydale@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States); Pugh, M., E-mail: marcuspughp@yahoo.com [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Colon, T. [Department of Mechanical Engineering, Alabama A and M University, Normal, AL (United States); Heidary, K., E-mail: kaveh.heidary@aamu.edu [Department of Electrical Engineering, Alabama A and M University, Normal, AL (United States); Johnson, R.B., E-mail: barry@w4wb.com [Department of Physics, Alabama A and M University, Normal, AL (United States); Ila, D., E-mail: ila@cim.aamu.edu [Center for Irradiation of Materials, Alabama A and M University, Normal, AL (United States); Department of Physics, Alabama A and M University, Normal, AL (United States)

2011-12-15

The defects and disorder in the thin films caused by MeV ions bombardment and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of an inelastic interaction and phonon annihilation. We prepared the thermoelectric generator devices from 100 alternating layers of SiO{sub 2}/SiO{sub 2} + Cu multi-nano layered superlattice films at the total thickness of 382 nm and 50 alternating layers of SiO{sub 2}/SiO{sub 2} + Au multi-nano layered superlattice films at the total thickness of 147 nm using the physical vapor deposition (PVD). Rutherford Backscattering Spectrometry (RBS) and RUMP simulation have been used to determine the stoichiometry of the elements of SiO{sub 2}, Cu and Au in the multilayer films and the thickness of the grown multi-layer films. The 5 MeV Si ions bombardments have been performed using the AAMU-Center for Irradiation of Materials (CIM) Pelletron ion beam accelerator to make quantum (nano) dots and/or quantum (quantum) clusters in the multilayered superlattice thin films to decrease the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and cross plane electrical conductivity. To characterize the thermoelectric generator devices before and after Si ion bombardments we have measured Seebeck coefficient, cross-plane electrical conductivity, and thermal conductivity in the cross-plane geometry for different fluences.

Thermoelectric materials - Compromising between high efficiency and materials abundance

Energy Technology Data Exchange (ETDEWEB)

Homm, G.; Klar, P.J. [I. Physikalisches Institut, Justus-Liebig-Universitaet, Heinrich-Buff-Ring 16, 35392 Giessen (Germany)

2011-09-15

In the context of CO{sub 2} neutral and regenerative energy production, the field of thermoelectrics has shifted more and more into the focus of scientific research in the last few years. Particularly a lot of research projects were started in the field of energy autarkic sensor technology and the so called energy harvesting, i.e. the recycling of otherwise lost energy. A potentially huge industrial branch for thermoelectric applications is the automotive industry with a main emphasis on generating electricity out of the waste heat of combustion engines with the help of thermoelectric generators or using Peltier cooling to replace conventional air conditioning in the passenger compartment. In addition, many niche applications are possible, e.g. as sensors for measuring the air pressure of tires etc. The applications of thermoelectric devices are very versatile. We analyse the potential of the state-of-the-art thermoelectric materials SiGe, PbTe, Bi{sub 2}Te{sub 3}, FeSi{sub 2} and potentially ZnO with respect to employment in four types of applications, classified by mobile vs stationary and specialized vs. mass application. The selection criteria comprise efficiency, materials availability, costs, environmental friendliness and toxicity. Based on these criteria, a decision matrix for choosing the appropriate material system for a specific application is defined. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Very heavily electron-doped CrSi2 as a high-performance high-temperature thermoelectric material

International Nuclear Information System (INIS)

Parker, David; Singh, David J

2012-01-01

We analyze the thermoelectric behavior, using first principles and Boltzmann transport calculations, of very heavily electron-doped CrSi 2 and find that at temperatures of 900-1250 K and electron dopings of 1-4 × 10 21 cm -3 , thermopowers as large in magnitude as 200 μV K -1 may be found. Such high thermopowers at such high carrier concentrations are extremely rare, and suggest that excellent thermoelectric performance may be found in these ranges of temperature and doping. (paper)

Si Thermoelectric Power Generator with an Unconventional Structure

Science.gov (United States)

Sakamoto, Tatsuya; Iida, Tsutomu; Ohno, Yota; Ishikawa, Masashi; Kogo, Yasuo; Hirayama, Naomi; Arai, Koya; Nakamura, Takashi; Nishio, Keishi; Takanashi, Yoshifumi

2014-06-01

We examine the mechanical stability of an unconventional Mg2Si thermoelectric generator (TEG) structure. In this structure, the angle θ between the thermoelectric (TE) chips and the heat sink is less than 90°. We examined the tolerance to an external force of various Mg2Si TEG structures using a finite-element method (FEM) with the ANSYS code. The output power of the TEGs was also measured. First, for the FEM analysis, the mechanical properties of sintered Mg2Si TE chips, such as the bending strength and Young's modulus, were measured. Then, two-dimensional (2D) TEG models with various values of θ (90°, 75°, 60°, 45°, 30°, 15°, and 0°) were constructed in ANSYS. The x and y axes were defined as being in the horizontal and vertical directions of the substrate, respectively. In the analysis, the maximum tensile stress in the chip when a constant load was applied to the TEG model in the x direction was determined. Based on the analytical results, an appropriate structure was selected and a module fabricated. For the TEG fabrication, eight TE chips, each with dimensions of 3 mm × 3 mm × 10 mm and consisting of Sb-doped n-Mg2Si prepared by a plasma-activated sintering process, were assembled such that two chips were connected in parallel, and four pairs of these were connected in series on a footprint of 46 mm × 12 mm. The measured power generation characteristics and temperature distribution with temperature differences between 873 K and 373 K are discussed.

Bulk Thermoelectric Materials Reinforced with SiC Whiskers

Science.gov (United States)

Akao, Takahiro; Fujiwara, Yuya; Tarui, Yuki; Onda, Tetsuhiko; Chen, Zhong-Chun

2014-06-01

SiC whiskers have been incorporated into Zn4Sb3 compound as reinforcements to overcome its extremely brittle nature. The bulk samples were prepared by either hot-extrusion or hot-pressing techniques. The obtained products containing 1 vol.% to 5 vol.% SiC whiskers were confirmed to exhibit sound appearance, high density, and fine-grained microstructure. Mechanical properties such as the hardness and fracture resistance were improved by the addition of SiC whiskers, as a result of dispersion strengthening and microstructural refinement induced by a pinning effect. Furthermore, crack deflection and/or bridging/pullout mechanisms are invoked by the whiskers. Regarding the thermoelectric properties, the Seebeck coefficient and electrical resistivity values comparable to those of the pure compound are retained over the entire range of added whisker amount. However, the thermal conductivity becomes large with increasing amount of SiC whiskers because of the much higher conductivity of SiC relative to the Zn4Sb3 matrix. This results in a remarkable degradation of the dimensionless figure of merit in the samples with addition of SiC whiskers. Therefore, the optimum amount of SiC whiskers in the Zn4Sb3 matrix should be determined by balancing the mechanical properties and thermoelectric performance.

Thermoelectric properties of WSi{sub 2}–Si{sub x}Ge{sub 1−x} composites

Energy Technology Data Exchange (ETDEWEB)

Dynys, F.W.; Sayir, A. [NASA Glenn Research Center, Cleveland, OH 44135 (United States); Mackey, J., E-mail: jam151@zips.uakron.edu [Department of Mechanical Engineering, University of Akron, Akron, OH 44325 (United States); Sehirlioglu, A. [Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106 (United States)

2014-08-01

Highlights: • We explore a novel W/Si/Ge composite system for thermoelectric applications. • The influence of crucible selection on electrical properties is investigated. • Introduction of W can reduce the expensive Ge component of the alloy. - Abstract: Thermoelectric properties of the W/Si/Ge alloy system have been investigated with varying concentration levels of germanium and tungsten. The alloys were fabricated by directional solidification with the Bridgman method using boron nitride and fused silica crucibles. The effect of crucible contamination was investigated and found to result in doping the system to suitable levels for thermoelectric applications. The system has been demonstrated as a suitable high temperature p-type thermoelectric material exhibiting high power factors, >3000 μW/m K{sup 2}. Seebeck coefficients of the system are on the order of +300 μV/K and electrical conductivities of 2.8 × 10{sup 4} S/m at the optimum operating temperature. The best composition, 0.9 at% W/9.3 at% Ge, achieved a figure of merit comparable to RTG values over the temperature range of interest. The results suggest that W addition can reduce the use of expensive Ge component of the alloy. Reported are the details of processing conditions, microstructure development, and temperature dependent thermoelectric properties. The material system was stable at the temperatures required for NASA’s radioisotope thermoelectric generators.

Nanoscale thermoelectric materials

International Nuclear Information System (INIS)

Failamani, F.

2015-01-01

binary Zr-B system. Interestingly, the FeB phases are formed only by addition of small amounts of group IV metals to TaB. These high temperature phases may serve as nano particles to decrease the thermal conductivity of the composite by reducing the phonon mean free path on the grain boundaries, thus improving ZT. In order to define an electrode material suitable for long-term operation in contact with Sb-based skutterudite thermoelectrics at the hot end of the TE-device, the detailed knowledge of the binary metal - antimony phase diagrams and properties of phases formed in the diffusion zone are required. Hitherto, only the Nb-Sb phase diagram has been reported with some controversial results, whilst the {V,Ta}-Sb phase diagrams have not been constructed yet. Chapter 3 summarizes the investigation on the {V,Nb,Ta}-Sb systems to close this gap and to remove ambiguities from the Nb-Sb diagram. Moreover physical properties of {V,Nb,Ta}Sb2 that are formed in the diffusion zones have been studied in the temperature region relevant for automotive application of skutterudite thermoelectrics (up to 600°C). A novel ternary compound with composition close to “Ba2V5Sb9” was observed in the diffusion zones between V and n-type Ba0.3Co4Sb12 at 600°C. Structural investigation revealed the correct formula as Ba5V12Sb19+x, isotypic with Ba5Ti12Sb19+x, however, with some additional site occupation and disorder. Search for isotypic compounds among the rest of early transition metals revealed that Nb and Ta form the corresponding phases at 700°C. However, only the formation of Ba5Nb12Sb19+x was confirmed by both XRPD and XRSC data, while neither the bulk nor the single crystal of Ba5Ta12Sb19+x could be obtained to confirm its formation. A detailed study on the crystal structure and its impact on the physical (transport and thermal) properties of these compounds are presented in chapter 4. In our search for new TE materials we studied the {La,Ce}-(Ni,Zn)-Si systems. The

Precipitation kinetics of Al-1.12 Mg{sub 2}Si-0.35 Si and Al-1.07 Mg{sub 2}Si-0.33 Cu alloys

Energy Technology Data Exchange (ETDEWEB)

Gaber, A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Gaffar, M.A. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)]. E-mail: mgaafar@aucegypt.edu; Mostafa, M.S. [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt); Zeid, E.F. Abo [Physics Department, Faculty of Science, Assiut University, Assiut 71516 (Egypt)

2007-02-21

The kinetics of hardening precipitates of Al-1.12 wt.% Mg{sub 2}Si-0.35 wt.% Si (excess Si) and Al-1.07 wt.% Mg{sub 2}Si-0.33 wt.% Cu (balanced + Cu) alloys have been investigated by means of differential scanning calorimetry and hardness measurements. The excess Si enhances the precipitation kinetics and improves the strength of the material. On the other hand, however addition of Cu assist formation of the Q' phase which positively changed the alloy strength. The high binding energy between vacancies and solute atoms (Si and Mg) enhances the combination of Si, Mg and vacancies to form Si-Mg-vacancy clusters. These clusters act as nucleation sites for GP-zones. The coexistence of the {beta}'- and Q'-precipitates in the balanced + Cu alloy results in a higher peak age hardening compared to the alloy with Si in excess.

Potential thermoelectric material open framework Si24 from a first-principles study

International Nuclear Information System (INIS)

Ouyang, Tao; Zhang, Pei; Xiao, Huaping; Tang, Chao; Li, Jin; He, Chaoyu; Zhong, Jianxin

2017-01-01

Open framework Si 24 is a new synthesis cage-like silicon allotrope with a quasi-direct bandgap and predicted to exhibit outstanding adsorption efficiency, foreshowing the potential applications in the photovoltaic community. In this paper, the thermoelectric property of such new Si structures is investigated by combining first-principles calculation and semiclassical Boltzmann transport theory. The calculations show that the Si 24 possesses a superb Seebeck coefficient, and obviously anisotropic electronic conductivity. Owing to more energy extremums existing in the conduction band region, the power factor of Si 24 in the n-type doping is always better than that in p-type samples. Anisotropic phonon transport property is observed as well in Si 24 with average lattice thermal conductivity of 45.35 W m −1 K −1 at room temperature. Based on the electron relaxation time estimated from the experiment, the thermoelectric figure of merit of Si 24 is found to be as high as 0.69 (n-type doping at 700 K) and 0.51 (p-type doping at 700 K) along the xx crystal direction, which is about two orders of magnitude larger than that of diamond Si ( d -Si). The findings presented in this work shed light on the thermoelectric performance of Si 24 and qualify that such new Si allotrope is a promising platform for achieving the recombination of photovoltaic and thermoelectric technologies together. (paper)

Designing high-Performance layered thermoelectric materials through orbital engineering

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Madsen, Georg K. H.

2016-01-01

Thermoelectric technology, which possesses potential application in recycling industrial waste heat as energy, calls for novel high-performance materials. The systematic exploration of novel thermoelectric materials with excellent electronic transport properties is severely hindered by limited...... insight into the underlying bonding orbitals of atomic structures. Here we propose a simple yet successful strategy to discover and design high-performance layered thermoelectric materials through minimizing the crystal field splitting energy of orbitals to realize high orbital degeneracy. The approach...... naturally leads to design maps for optimizing the thermoelectric power factor through forming solid solutions and biaxial strain. Using this approach, we predict a series of potential thermoelectric candidates from layered CaAl2Si2-type Zintl compounds. Several of them contain nontoxic, low-cost and earth...

Thermoelectric materials having porosity

Science.gov (United States)

Heremans, Joseph P.; Jaworski, Christopher M.; Jovovic, Vladimir; Harris, Fred

2014-08-05

A thermoelectric material and a method of making a thermoelectric material are provided. In certain embodiments, the thermoelectric material comprises at least 10 volume percent porosity. In some embodiments, the thermoelectric material has a zT greater than about 1.2 at a temperature of about 375 K. In some embodiments, the thermoelectric material comprises a topological thermoelectric material. In some embodiments, the thermoelectric material comprises a general composition of (Bi.sub.1-xSb.sub.x).sub.u(Te.sub.1-ySe.sub.y).sub.w, wherein 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 1.8.ltoreq.u.ltoreq.2.2, 2.8.ltoreq.w.ltoreq.3.2. In further embodiments, the thermoelectric material includes a compound having at least one group IV element and at least one group VI element. In certain embodiments, the method includes providing a powder comprising a thermoelectric composition, pressing the powder, and sintering the powder to form the thermoelectric material.

Energetic prediction on the stability of A2Mg12Si7, A2Mg4Si3, and AMgSi in the A2Si–Mg2Si system (A = Ca, Sr and Ba) and their calculated electronic structures

International Nuclear Information System (INIS)

Imai, Yoji; Mori, Yoshihisa; Nakamura, Shigeyuki; Takarabe, Ken-ichi

2014-01-01

Highlights: • Formation energies of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca,Sr,Ba) were calculated. • All AMgSi are quite stable compared to mixture of A 2 Si and Mg 2 Si. • Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are predicted to be stable, but Ca 2 Mg 4 Si 3 is not. • Ca 2 Mg 12 Si 7 and Sr 2 Mg 12 Si 7 are energetically unstable. • Stability of Ba 2 Mg 12 Si 7 is a tender subject. -- Abstract: In order to evaluate the relative stability of A 2 Mg 4 Si 3 , A 2 Mg 12 Si 7 , and AMgSi (A = Ca, Sr, and Ba) in the A 2 Si–Mg 2 Si system, electronic energy changes in the formation of these compounds were calculated using a density-functional theory with the Perdew–Wang generalized gradient approximations. It was found that (1) AMgSi’s are quite stable compared to equi-molar mixture of A 2 Si and Mg 2 Si, (2) Ba 2 Mg 4 Si 3 and Sr 2 Mg 4 Si 3 are also stable, (3) Ca 2 Mg 4 Si 3 and Ca 2 Mg 12 Si 7 are less stable than the mixture of CaMgSi and Mg 2 Si, and (4) Stability of Ba 2 Mg 12 Si 7 is a tender subject and Sr 2 Mg 12 Si 7 is energetically unstable compared to the mixture of Sr 2 Mg 4 Si 3 (or, SrMgSi) and Mg 2 Si. The presence of Sr 2 Mg 12 Si 7 may be due to the vibrational and/or configurational entropy, which are not treated in the present study. From the calculated electronic densities of state, complex compounds of SrMgSi and Mg 2 Si have both p-type and n-type character, depending on the ratio of SrMgSi and Mg 2 Si in that compound

Mechanical properties of thermoelectric n-type magnesium silicide synthesized employing in situ spark plasma reaction sintering

Science.gov (United States)

Muthiah, Saravanan; Singh, R. C.; Pathak, B. D.; Dhar, Ajay

2017-07-01

Thermoelectric devices employing magnesium silicide (Mg2Si) offer an inexpensive and non-toxic solution for green energy generation compared to other existing conventional thermoelectric materials in the mid-temperature range. However, apart from the thermoelectric performance, their mechanical properties are equally important in order to avoid the catastrophic failure of their modules during actual operation. In the present study, we report the synthesis of Mg2Si co-doped with Bi and Sb employing in situ spark plasma reaction sintering and investigate its broad range of mechanical properties. The mechanical properties of the sintered co-doped Mg2Si suggest a significantly enhanced value of hardness ~5.4  ±  0.2 GPa and an elastic modulus ~142.5  ±  6 GPa with a fracture toughness of ~1.71  ±  0.1 MPa  √m. The thermal shock resistance, which is one of the most vital parameter for designing thermoelectric devices, was found to be ~300 W m-1, which is higher than most of the other existing state-of-the-art mid-temperature thermoelectric materials. The friction and wear characteristics of sintered co-doped Mg2Si have been reported for the first time, in order to realize the sustainability of their thermoelectric modules under actual hostile environmental conditions.

Coherent interface structures and intergrain Josephson coupling in dense MgO/Mg{sub 2}Si/MgB{sub 2} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Ueno, Katsuya; Takahashi, Kazuyuki; Uchino, Takashi, E-mail: uchino@kobe-u.ac.jp [Department of Chemistry, Graduate School of Science, Kobe University, Nada, Kobe 657-8501 (Japan); Nagashima, Yukihito [Nippon Sheet Glass Co., Ltd., Konoike, Itami 664-8520 (Japan); Seto, Yusuke [Department of Planetology, Graduate School of Science, Kobe University, Nada, Kobe 657-8501 (Japan); Matsumoto, Megumi; Sakurai, Takahiro [Center for Support to Research and Education Activities, Kobe University, Nada, Kobe 657-8501 (Japan); Ohta, Hitoshi [Molecular Photoscience Research Center, Kobe University, Nada, Kobe 657-8501 (Japan)

2016-07-07

Many efforts are under way to control the structure of heterointerfaces in nanostructured composite materials for designing functionality and engineering application. However, the fabrication of high-quality heterointerfaces is challenging because the crystal/crystal interface is usually the most defective part of the nanocomposite materials. In this work, we show that fully dense insulator (MgO)/semiconductor(Mg{sub 2}Si)/superconductor(MgB{sub 2}) nanocomposites with atomically smooth and continuous interfaces, including epitaxial-like MgO/Mg{sub 2}Si interfaces, are obtained by solid phase reaction between metallic magnesium and a borosilicate glass. The resulting nanocomposites exhibit a semiconductor-superconducting transition at 36 K owing to the MgB{sub 2} nanograins surrounded by the MgO/Mg{sub 2}Si matrix. This transition is followed by the intergrain phase-lock transition at ∼24 K due to the construction of Josephson-coupled network, eventually leading to a near-zero resistance state at 17 K. The method not only provides a simple process to fabricate dense nanocomposites with high-quality interfaces, but also enables to investigate the electric and magnetic properties of embedded superconducting nanograins with good intergrain coupling.

First-principles study of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material

Science.gov (United States)

Duan, H.; Dong, Y. Z.; Huang, Y.; Hu, Y. H.; Chen, X. S.

2016-01-01

Electronic structures of intrinsic vacancy defects in Sr2MgSi2O7 phosphorescent host material are investigated using first-principles calculations. Si vacancies are too high in energy to play any role in the persistent luminescence of Sr2MgSi2O7 phosphor. Mg vacancies form easier than Sr vacancies as a result of strain relief. Among all the vacancies, O1 vacancies stand out as a likely candidate because they are the most favorable in energy and introduce an empty triply degenerate state just below the CBM and a fully-occupied singlet state at ~1 eV above the VBM, constituting in this case effective hole trap level and electron trap levels, respectively. Mg vacancies are unlikely to explain the persistent luminescence because of its too shallow electron trap level but they may compensate the hole trap associated with O1 vacancies. We yield consistent evidence for the defect physics of these vacancy defects on the basis of the equilibrium properties of Sr2MgSi2O7, total-energy calculations, and electronic structures. The persistent luminescence mechanism of Sr2MgSi2O7:Eu2+, Dy3+ phosphor is also discussed based on our results for O1 vacancies trap center. Our results provide a guide to more refined experiments to control intrinsic traps, whereby probing synthetic strategies toward new improved phosphors.

Yb14MnSb11 as a High-Efficiency Thermoelectric Material

Science.gov (United States)

Snyder, G. Jeffrey; Gascoin, Franck; Brown, Shawna; Kauzlarich, Susan

2009-01-01

Yb14MnSb11 has been found to be wellsuited for use as a p-type thermoelectric material in applications that involve hotside temperatures in the approximate range of 1,200 to 1,300 K. The figure of merit that characterizes the thermal-to-electric power-conversion efficiency is greater for this material than for SiGe, which, until now, has been regarded as the state-of-the art high-temperature ptype thermoelectric material. Moreover, relative to SiGe, Yb14MnSb11 is better suited to incorporation into a segmented thermoelectric leg that includes the moderate-temperature p-type thermoelectric material CeFe4Sb12 and possibly other, lower-temperature p-type thermoelectric materials. Interest in Yb14MnSb11 as a candidate high-temperature thermoelectric material was prompted in part by its unique electronic properties and complex crystalline structure, which place it in a class somewhere between (1) a class of semiconducting valence compounds known in the art as Zintl compounds and (2) the class of intermetallic compounds. From the perspective of chemistry, this classification of Yb14MnSb11 provides a first indication of a potentially rich library of compounds, the thermoelectric properties of which can be easily optimized. The concepts of the thermoelectric figure of merit and the thermoelectric compatibility factor are discussed in Compatibility of Segments of Thermo - electric Generators (NPO-30798), which appears on page 55. The traditional thermoelectric figure of merit, Z, is defined by the equation Z = alpha sup 2/rho K, where alpha is the Seebeck coefficient, rho is the electrical resistivity, and k is the thermal conductivity.

Effect of Synthesis Procedure on Thermoelectric Property of SiGe Alloy

Science.gov (United States)

Li, Jing; Han, Jun; Jiang, Tao; Luo, Lili; Xiang, Yongchun

2018-05-01

SiGe thermoelectric material has been synthesized by ball milling combined with hot pressing (HP) or spark plasma sintering (SPS). Effects of ball milling time, powder to ball weight ratio and sintering method on microstructure and thermoelectric properties of SiGe are studied. The results show that longer ball milling time leads to decreased density and worse electrical properties. In the sintering process, SPS results in much larger density and better electrical properties than HP. The Si0.795Ge0.2B0.005 sample prepared by 2 h ball milling combined with SPS obtains a maximum power factor of 3.0 mW m-1 K-2 at 860 K and ZT of 0.95 at 1000 K.

Electrochemically synthesized Si nano wire arrays and thermoelectric nano structures

International Nuclear Information System (INIS)

Khuan, N.I.; Ying, K.K.; Nur Ubaidah Saidin; Foo, C.T.

2012-01-01

Thermoelectric nano structures hold great promise for capturing and directly converting into electricity some vast amount of low-grade waste heats now being lost to the environment (for example from nuclear power plant, fossil fuel burning, automotive and household appliances). In this study, large-area vertically-aligned silicon nano wire (SiNW) arrays were synthesized in an aqueous solution containing AgNO 3 and HF on p-type Si (100) substrate by self-selective electroless etching process. The etching conditions were systematically varied in order to achieve different stages of nano wire formation. Diameters of the SiNWs obtained varied from approximately 50 to 200 nm and their lengths ranged from several to a few tens of μm. Te/ Bi 2 Te 3 -Si thermoelectric core-shell nano structures were subsequently obtained via galvanic displacement of SiNWs in acidic HF electrolytes containing HTeO 2 + and Bi 3+ / HTeO 2 + ions. The reactions were basically a nano-electrochemical process due to the difference in redox potentials between the materials. the surface-modified SiNWs of core-shell structures had roughened surface morphologies and therefore, higher surface-t-bulk ratios compared to unmodified SiNWs. They have potential applications in sensors, photovoltaic and thermoelectric nano devices. Growth study on the SiNWs and core-shell nano structures produced is presented using various microscopy, diffraction and probe-based techniques for microstructural, morphological and chemical characterizations. (Author)

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Science.gov (United States)

Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

2014-08-01

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

Energy Technology Data Exchange (ETDEWEB)

Budak, S., E-mail: satilmis.budak@aamu.edu [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Heidary, K. [Department of Electrical Engineering and Computer Science, Alabama A and M University, Huntsville, AL (United States); Johnson, R.B.; Colon, T. [Department of Physics, Alabama A and M University, Huntsville, AL (United States); Muntele, C. [Cygnus Scientific Services, Huntsville, AL (United States); Ila, D. [Department of Physics, Fayetteville St. University, Fayetteville, NC (United States)

2014-08-15

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S{sup 2}σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

Corrosion analysis of AlMg2 and AlMgSi using electrochemical method

International Nuclear Information System (INIS)

Dian A; Maman Kartaman; Rosika K; Yanlinastuti

2014-01-01

Corrosion test of cladding materials and structures of research reactor fuel, AlMgSi and AlMg2 have been performed in demineralized water of pH 2 and 6.7 using an electrochemical method. Corrosion phenomenon is affected by several factor such as composition and condition of solution. The purpose of this activity is to investigate the corrosion phenomena through the determination of the parameters of corrosion and polarization curve. The materials used are AlMg2 and AlMgSi alloy in circular dish shape with an area of 1 Cm"2. Preparation of the test sample is performed through several stages polishing, cleaning and drying procedures followed ASTM G3. The electrochemical method is done by measuring the open circuit potential (OCP), polarization resistance and potentiodynamic in demineralized water of pH 2 and pH 6.7 at temperature of 25°C. The results of the OCP is the corrosion potential (Ecorr) of AlMg2 and AlMgSi each of -906.1 mV and -619.8 mV at pH 2 and -868.6 and -756.7 mV at pH 6.7 mV. The results of measurements by polarization resistance technique showed that the corrosion rate of AlMg2 and AlMgSi in safe category (<2 mpy) at pH 6.7 and at pH 2 corrosion rate increased significantly, but still in the lightweight category (<20 mpy). Potentiodynamic curves showed that the passivation at pH 6.7 is very low while the passivation at pH 2 occurs within a relatively short range potential and followed events corroded. (author)

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

Science.gov (United States)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Stable and low contact resistance electrical contacts for high temperature SiGe thermoelectric generators

KAUST Repository

Zhang, Bo

2018-04-14

The thermal stability and contact resistance of TaAlN thin films as electrical contacts to SiGe thermoelectric elements are reported. We demonstrate that a sharp interface is maintained after the device annealed at 800°C for over 100h, indicating that no interdiffusion takes place between TaAlN and SiGe. A specific contact resistivity of (2.1±1.3)×10−6Ω-cm2 for p-type SiGe and (2.8±1.6)×10−5 Ω-cm2 for n-type SiGe is demonstrated after the high temperature annealing. These results show that TaAlN is a promising contact material for high temperature thermoelectrics such as SiGe.

Thermoelectric properties and microstructure of Mg3Sb2

International Nuclear Information System (INIS)

Condron, Cathie L.; Kauzlarich, Susan M.; Gascoin, Franck; Snyder, G. Jeffrey

2006-01-01

Mg 3 Sb 2 has been prepared by direct reaction of the elements. Powder X-ray diffraction, thermal gravimetric, differential scanning calorimetery, and microprobe data were obtained on hot pressed samples. Single phase samples of Mg 3 Sb 2 were prepared and found to contain oxygen at the grain boundaries and to lose Mg and oxidize at temperatures above 900 K. Thermoelectric properties were characterized by Seebeck, electrical resistivity, and thermal conductivity measurements from 300 to 1023 K, and the maximum zT was found to be 0.21 at ∼875 K. - Graphical abstract: Dimensionless figure of merit for Mg 3 Sb 2 hot pressed and sintered at 873 K. The inset illustrates the crystal structure of Mg 3 Sb 2 along the [100] direction (white=Mg, black=Sb)

New Insight on Tuning Electrical Transport Properties via Chalcogen Doping in n-type Mg3Sb2-Based Thermoelectric Materials

DEFF Research Database (Denmark)

Zhang, Jiawei; Song, Lirong; Borup, Kasper

2018-01-01

n-type Mg3Sb1.5Bi0.5 has recently been discovered to be a promising thermoelectric material, yet the effective n-type dopants are mainly limited to the chalcogens. This may be attributed to the limited chemical insight into the effects from different n-type dopants. By comparing the effects of di...

Microstructure and thermoelectric properties of β-FeSi2 ceramics fabricated by hot-pressing and spark plasma sintering

International Nuclear Information System (INIS)

Qu Xiurong; Lue Shuchen; Hu Jianmin; Meng Qingyu

2011-01-01

Highlights: → With increasing hot-pressing (HP) temperature, the thermoelectric figure of merit of β-FeSi 2 ceramics is improved slightly. → The grain size of the sample sintered by the spark plasma sintering (SPS) process is smaller than that by the HP process. → The SPS sample shows excellent thermoelectric performance attributed to low thermal conductivity. - Abstract: The microstructure and thermoelectric properties of β-FeSi 2 ceramics by hot pressing (HP) and spark plasma sintering (SPS) are investigated. With increasing hot-pressing temperature, the density, electronic conductivity and thermal conductivity of the samples increase significantly, the thermoelectric figure of merit is improved slightly. The microstructure study indicates that the sizes of the β-FeSi 2 and ε-FeSi phases in the sample sintered by the SPS process are smaller than that by the HP process. The SPS sample shows excellent thermoelectric performance due to the low thermal conductivity.

Investigation of thermoelectric SiC ceramics for energy harvesting ...

Indian Academy of Sciences (India)

Utilizing thermoelectric technology to aerodynamic heat harvesting on the ... in terms of the computational fluid dynamics and the thermal conduction theory. ... It is shown that doping elements with good ... ous SiC materials, yet few experimental studies have been ... polymer-derived consolidated SiC-based ceramics, which.

Thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap semiconductors SiC, GaN, and ZnO

Directory of Open Access Journals (Sweden)

Zheng Huang

2015-09-01

Full Text Available We have investigated the thermoelectric properties of the 3C, 2H, 4H, and 6H polytypes of the wide-band-gap(n-type semiconductors SiC, GaN, and ZnO based on first-principles calculations and Boltzmann transport theory. Our results show that the thermoelectric performance increases from 3C to 6H, 4H, and 2H structures with an increase of hexagonality for SiC. However, for GaN and ZnO, their power factors show a very weak dependence on the polytype. Detailed analysis of the thermoelectric properties with respect to temperature and carrier concentration of 4H-SiC, 2H-GaN, and 2H-ZnO shows that the figure of merit of these three compounds increases with temperature, indicating the promising potential applications of these thermoelectric materials at high temperature. The significant difference of the polytype-dependent thermoelectric properties among SiC, GaN, and ZnO might be related to the competition between covalency and ionicity in these semiconductors. Our calculations may provide a new way to enhance the thermoelectric properties of wide-band-gap semiconductors through atomic structure design, especially hexagonality design for SiC.

Processing and nanostructure influences on mechanical properties of thermoelectric materials

Science.gov (United States)

Schmidt, Robert David

Thermoelectric (TE) materials are materials that can generate an electric current from a thermal gradient, with possible service in recovery of waste heat such as engine exhaust. Significant progress has been made in improving TE conversion efficiency, typically reported according to the figure of merit, ZT, with several recent papers publishing ZT values above 2. Furthermore, cost reductions may be made by the use of lower cost elements such as Mg, Si, Sn, Pb, Se and S in TE materials, while achieving ZT values between 1.3 and 1.8. To be used in a device, the thermoelectric material must be able to withstand the applied thermal and mechanical forces without failure. However, these materials are brittle, with low fracture toughness typically less than 1.5 MPa-m1/2, and often less than 0.5 MPa-m1/2. For comparison, window glass is approximately 0.75 MPa-m1/2. They have been optimized with nanoprecipitates, nanoparticles, doping, alterations in stoichiometry, powder processing and other techniques, all of which may alter the mechanical properties. In this study, the effect of SiC nanoparticle additions in Mg2Si, SnTe and Ag nanoparticle additions in the skutterudite Ba0.3Co 4Sb12 on the elastic moduli, hardness and fracture toughness are measured. Large changes (˜20%) in the elastic moduli in SnTe 1+x as a function of x at 0 and 0.016 are shown. The effect on mechanical properties of doping and precipitates of CdS or ZnS in a PbS or PbSe matrix have been reported. Changes in sintering behavior of the skutterudite with the Ag nanoparticle additions were explored. Possible liquid phase sintering, with associated benefits in lower processing temperature, faster densification and lower cost, has been shown. A technique has been proposed for determining additional liquid phase sintering aids in other TE materials. The effects of porosity, grain size, powder processing method, and sintering method were explored with YbAl3 and Ba0.3Co4Sb 12, with the porosity dependence of

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

Science.gov (United States)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Mechanical Properties and Fabrication of Nanostructured Mg_2SiO_4-MgAl_2O_4 Composites by High-Frequency Induction Heated Combustion

International Nuclear Information System (INIS)

Shon, In-Jin; Kang, Hyun-Su; Hong, Kyung-Tae; Doh, Jung-Mann; Yoon, Jin-Kook

2011-01-01

Nanopowders of MgO, Al_2O_3 and SiO_2 were made by high energy ball milling. The rapid sintering of nanostructured MgAl_2O_4-Mg_2SiO_4 composites was investigated by a high-frequency induction heating sintering process. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nanocrystalline materials have received much attention as advanced engineering materials with improved physical and mechanical properties. As nanomaterials possess high strength, high hardness, excellent ductility and toughness, undoubtedly, more attention has been paid for the application of nanomaterials. Highly dense nanostructured MgAl_2O_4-Mg_2SiO_4 composites were produced with simultaneous application of 80 MPa pressure and induced output current of total power capacity (15 kW) within 2 min. The sintering behavior, gain size and mechanical properties of MgAl_2O_4-Mg_2SiO_4 composites were investigated.

Thermoelectric materials -- New directions and approaches. Materials Research Society symposium proceedings, Volume 478

Energy Technology Data Exchange (ETDEWEB)

Tritt, T M; Kanatzidis, M G; Lyon, Jr, H B; Mahan, G D [eds.

1997-07-01

Thermoelectric materials are utilized in a wide variety of applications related to solid-state refrigeration or small-scale power generation. Thermoelectric cooling is an environmentally friendly method of small-scale cooling in specific applications such as cooling computer chips and laser diodes. Thermoelectric materials are used in a wide range of applications from beverage coolers to power generation for deep-space probes such as the Voyager missions. Over the past thirty years, alloys based on the Bi-Te systems {l{underscore}brace}(Bi{sub 1{minus}x}Sb{sub x}){sub 2} (Te{sub 1{minus}x}Se{sub x}){sub 3}{r{underscore}brace} and Si{sub 1{minus}x}Ge{sub x} systems have been extensively studied and optimized for their use as thermoelectric materials to perform a variety of solid-state thermoelectric refrigeration and power generation tasks. Despite this extensive investigation of the traditional thermoelectric materials, there is still a substantial need and room for improvement, and thus, entirely new classes of compounds will have to be investigated. Over the past two-to-three years, research in the field of thermoelectric materials has been undergoing a rapid rebirth. The enhanced interest in better thermoelectric materials has been driven by the need for much higher performance and new temperature regimes for thermoelectric devices in many applications. The essence of a good thermoelectric is given by the determination of the material's dimensionless figure of merit, ZT = ({alpha}{sup 2}{sigma}/{lambda})T, where {alpha} is the Seebeck coefficient, {sigma} the electrical conductivity and {lambda} the total thermal conductivity. The best thermoelectric materials have a value of ZT = 1. This ZT = 1 has been an upper limit for more than 30 years, yet no theoretical or thermodynamic reason exits for why it can not be larger. The focus of the symposium is embodied in the title, Thermoelectric Materials: New Directions and Approaches. Many of the researchers in the

Glass-ceramic materials of system MgO-Al{sub 2}O{sub 3}-SiO{sub 2} from rice husk ash; Materiales vitroceramicos del sistema MgO-Al2O3-SiO2 a partir de ceniza de cascara de arroz

Energy Technology Data Exchange (ETDEWEB)

Martin, M. I.; Rincon, J. M.; Andreola, F.; Barbieri, L.; Bondioli, F.; Lancellotti, I.; Romero, M.

2011-07-01

This wok shows the results of a valorisation study to use rice husk ash as raw material to develop glass-ceramic materials. An original glass has been formulated in the base system MgO-Al{sub 2}O{sub 3}-SiO{sub 2} with addition of B{sub 2}O{sub 3} and Na{sub 2}O to facilitate the melting and poring processes. Glass characterization was carried out by determining its chemical composition. Sintering behaviour has been examined by Hot Stage Microscopy (HSM). Thermal stability and crystallization mechanism have been studied by Differential Thermal Analysis (DTA). Mineralogy analyses of the glass-ceramic materials were carried out using X-ray Diffraction (XRD). Results show that it is possible to use ash rice husk to produce glass-ceramic materials by a sinter crystallization process, with nepheline (Na{sub 2}O-Al{sub 2}O{sub 3}-SiO{sub 2}) as major crystalline phase in the temperature interval 700-950 degree centigrade and forsterite (2MgO-SiO{sub 2}) at temperatures above 950 degree centigrade. (Author) 15 refs.

Luminescence characteristics of Mg2SiO4:Nd

International Nuclear Information System (INIS)

Indira, P.; Subrahmanyam, R.V.; Murthy, K.V.R.

2011-01-01

Thermoluminescence (TL) properties of Magnesium Ortho silicate (2:1) Mg 2 SiO 4 doped with various concentrations of rare earth (Nd) have been studied. The phosphor material were prepared using standard solid state reaction technique and heated specimens at 1100 ± 20 deg C for two hours. 4% Ammonium chloride was used as flux. The received material was grinded in an agate mortar and pestle. The TL exhibited by the Mg 2 SiO 4 with varying concentration of Nd is interesting in nature. It is interesting to note but as the concentration of Nd increases the peak around 125 deg C TL peak intensity increases. But the hump around 200 deg C resolved as TL peak at 253 deg C with high intensity. (author)

CuAlTe{sub 2}: A promising bulk thermoelectric material

Energy Technology Data Exchange (ETDEWEB)

Gudelli, Vijay Kumar [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Kanchana, V., E-mail: kanchana@iith.ac.in [Department of Physics, Indian Institute of Technology Hyderabad, Ordnance Factory Estate, Yeddumailaram 502 205, Telangana (India); Vaitheeswaran, G. [Advanced Centre of Research in High Energy Materials (ACRHEM), University of Hyderabad, Prof. C. R. Rao Road, Gachibowli, Hyderabad 500 046, Telangana (India)

2015-11-05

Transport properties of Cu-based chalcopyrite materials are presented using the full potential linear augmented plane wave method and Boltzmann Semi-classical theory. All the studied compounds appear to be direct band gap semiconductors evaluated based on the Tran-Blaha modified Becke-Johnson potential. The heavy and light band combination found near the valence band maximum (VBM) drive these materials to possess good thermoelectric properties. Among the studied compounds, CuAlTe{sub 2} is found to be more promising, in comparison with CuGaTe{sub 2}, which is reported to be an efficient thermoelectric material with appreciable figure of merit. Another interesting fact about CuAlTe{sub 2} is the comparable thermoelectric properties possessed by both n- type and p-type carriers, which might attract good device applications and are explained in detail using the electronic structure calculations. - Highlights: • Band structure calculation of Cu(Al,Ga)Ch{sub 2} compounds with the TB-mBJ functional. • Mixed heavy-light bands near Fermi level might favour good thermoelectric properties. • Among the investigated compounds CuAlTe{sub 2} appears to be more promising. • Thermoelectric properties of CuAlTe{sub 2} are almost comparable with CuGaTe{sub 2}. • Both n,p-type thermoelectric properties of CuAlTe{sub 2} can attract device applications.

Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

Science.gov (United States)

Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

2014-03-01

The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

Glass-ceramic materials of system MgO-Al2O3-SiO2 from rice husk ash

OpenAIRE

Martín Hernández, María Isabel; Rincón López, Jesús María; Andreola, F.; Barbieri, L.; Bondioli, F.; Lancellotti, I.; Romero, Maximina

2011-01-01

This wok shows the results of a valorisation study to use rice husk ash as raw material to develop glass-ceramic materials. An original glass has been formulated in the base system MgO-Al2O3-SiO2 with addition of B2O3 and Na2O to facilitate the melting and poring processes. Glass characterization was carried out by determining its chemical composition. Sintering behaviour has been examined by Hot Stage Microscopy (HSM). Thermal stability and crystallization mechanism have been studied by Diff...

Improved thermoelectric performance of CdO by adding SiC fibers versus by adding SiC nanoparticles inclusions

Science.gov (United States)

Liang, S.; Li, Longjiang

2018-03-01

We report the improved thermoelectric (TE) performance of CdO by alloying with SiC fibers. In contrast to the lowered thermoelectric figure of merit (ZT) in a CdO matrix with SiC nanoparticle composites, an appreciable ZT value increment of about 36% (from 0.32 to 0.435) at 1000 K was obtained in the CdO matrix with SiC fiber composites. Both kinds of composites show substantially decreased thermal conductivity due to additional phonon scattering by the nano-inclusions. Compared to the very high electrical resistivity (ρ ˜ 140 μΩ m) for 5 at. % SiC nanoparticle composites, SiC fiber composites favorably maintained a very low ρ (˜30 μΩ m) even with 5 at. % SiC at 1000 K. We think the substantial difference of specific surface areas of these two nano-inclusions (30 m2/g for fibers vs 300 m2/g for nanoparticles) might play a crucial role to fine tune the TE performance. Larger interface could be inductive to diffusion and electron acceptor activation, which affect carrier mobility considerably. This work might hint at an alternative approach to improve TE materials' performance.

Photoluminescence of Mg_2Si films fabricated by magnetron sputtering

International Nuclear Information System (INIS)

Liao, Yang-Fang; Xie, Quan; Xiao, Qing-Quan; Chen, Qian; Fan, Meng-Hui; Xie, Jing; Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di

2017-01-01

Highlights: • High quality Mg_2Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg_2Si films was reported. • The Mg_2Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg_2Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg_2Si-based light-emitting devices, Mg_2Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg_2Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg_2Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg_2Si film on Si (111) displays polycrystalline structure, whereas Mg_2Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg_2Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg_2Si films was observed for the first time. The PL emission wavelengths of Mg_2Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg_2Si films on glass substrate is much larger than that of Mg_2Si film on Si (111) substrate. The activation energy of 18 meV is

Study for material analogs of FeSb2: Material design for thermoelectric materials

Science.gov (United States)

Kang, Chang-Jong; Kotliar, Gabriel

2018-03-01

Using the ab initio evolutionary algorithm (implemented in uspex) and electronic structure calculations we investigate the properties of a new thermoelectric material FeSbAs, which is a material analog of the enigmatic thermoelectric FeSb2. We utilize the density functional theory and the Gutzwiller method to check the energetics. We find that FeSbAs can be made thermodynamically stable above ˜30 GPa. We investigate the electronic structure and thermoelectric properties of FeSbAs based on the density functional theory and compare with those of FeSb2. Above 50 K, FeSbAs has higher Seebeck coefficients than FeSb2. Upon doping, the figure of merit becomes larger for FeSbAs than for FeSb2. Another material analog FeSbP, was also investigated, and found thermodynamically unstable even at very high pressure. Regarding FeSb2 as a member of a family of compounds (FeSb2, FeSbAs, and FeSbP) we elucidate what are the chemical handles that control the gaps in this series. We also investigate solubility (As or P for Sb in FeSb2) we found As to be more soluble. Finally, we study a two-band model for thermoelectric properties and find that the temperature dependent chemical potential and the presence of the ionized impurities are important to explain the extremum in the Seebeck coefficient exhibited in experiments for FeSb2.

A Thermoelectric Generator Using Porous Si Thermal Isolation

Directory of Open Access Journals (Sweden)

Emmanouel Hourdakis

2013-10-01

Full Text Available In this paper we report on a thermoelectric generator (TEG using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al. The “hot” contacts of the thermocouples lie on the porous Si layer, while the “cold” contacts lie on bulk crystalline Si. A housing was also designed and fabricated in order to transfer any external temperature change on the “hot” contacts of the thermocouples, the “cold” contacts being isolated from the “hot” contacts by a thick resist layer. The fabrication of the sensing element (Si die is fully compatible with batch Si processing. The output power of the thermoelectric generator depends on the porous Si isolation layer thickness, porosity, structure and morphology. For a mesoporous Si layer of 60% porosity and a macroscopic temperature differential of 10 K, an output power of 0.39 μW/cm2 was measured for a 50 μm thick porous Si layer.

A Thermoelectric Generator Using Porous Si Thermal Isolation

Science.gov (United States)

Hourdakis, Emmanouel; Nassiopoulou, Androula G.

2013-01-01

In this paper we report on a thermoelectric generator (TEG) using thermal isolation provided by a thick porous Si layer locally formed on the Si wafer and thermocouples composed of p-doped polycrystalline Si/Al. The “hot” contacts of the thermocouples lie on the porous Si layer, while the “cold” contacts lie on bulk crystalline Si. A housing was also designed and fabricated in order to transfer any external temperature change on the “hot” contacts of the thermocouples, the “cold” contacts being isolated from the “hot” contacts by a thick resist layer. The fabrication of the sensing element (Si die) is fully compatible with batch Si processing. The output power of the thermoelectric generator depends on the porous Si isolation layer thickness, porosity, structure and morphology. For a mesoporous Si layer of 60% porosity and a macroscopic temperature differential of 10 K, an output power of 0.39 μW/cm2 was measured for a 50 μm thick porous Si layer. PMID:24152923

Thermoelectric power of PrMg3

Science.gov (United States)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg3.

Thermoelectric power of PrMg3

International Nuclear Information System (INIS)

Isikawa, Yosikazu; Somiya, Kazuya; Koyanagi, Huruto; Mizushima, Toshio; Kuwai, Tomohiko; Tayama, Takashi

2010-01-01

PrMg 3 is supposed to be one of the strongly correlated electron systems originated from the hybridization between the Pr 4f and conduction electrons, because the gigantic electronic specific heat coefficient C/T was observed at low temperatures. However, a typical behaviour of - ln T dependence was not observed in the temperature dependence of the electrical resistivity. The thermoelectric power S is a powerful tool to investigate the density of states at the Fermi energy. We measured carefully the thermoelectric power of PrMg 3 in the temperature range between 2 and 300 K. S is extremely small, ranged within ±1 μV/K over the whole temperature. The value of S/T at low temperature limit was also significantly smaller than expected from the specific heat results. We therefore conclude that the density of state at the Fermi level is not enhanced in PrMg 3 .

On the Phase Separation in n-Type Thermoelectric Half-Heusler Materials

Directory of Open Access Journals (Sweden)

Michael Schwall

2018-04-01

Full Text Available Half-Heusler compounds have been in focus as potential materials for thermoelectric energy conversion in the mid-temperature range, e.g., as in automotive or industrial waste heat recovery, for more than ten years now. Because of their mechanical and thermal stability, these compounds are advantageous for common thermoelectric materials such as Bi 2 Te 3 , SiGe, clathrates or filled skutterudites. A further advantage lies in the tunability of Heusler compounds, allowing one to avoid expensive and toxic elements. Half-Heusler compounds usually exhibit a high electrical conductivity σ , resulting in high power factors. The main drawback of half-Heusler compounds is their high lattice thermal conductivity. Here, we present a detailed study of the phase separation in an n-type Heusler materials system, showing that the Ti x Zr y Hf z NiSn system is not a solid solution. We also show that this phase separation is key to the thermoelectric high efficiency of n-type Heusler materials. These results strongly underline the importance of phase separation as a powerful tool for designing highly efficient materials for thermoelectric applications that fulfill the industrial demands of a thermoelectric converter.

Theoretical analysis of thermoelectric power of nanocrystalline ReSi2 thin film

International Nuclear Information System (INIS)

Kchoudhary, K; Kaurav; Gupta, N; Varshney, D

2007-01-01

The formulation is developed for the predictive modeling of thermoelectric power (S) of nano-crystalline ReSi 2 . We have evaluated the phonon thermoelectric power by incorporating the scattering of phonons with impurities, grain boundaries, charge careers and phonons. It is noticed that at low temperatures (T < 400 K), S increases and show power temperature dependence because of the larger mean free path of phonon, S shows a broad peak at about 550 K, which is artefact of the competition among umklapp scattering and grain boundaries scattering. Further, by increasing temperature S decreases with change in slope. The anomalies are well accounted in terms of interaction among the phonons-impurity, phonon grain boundaries and the umklapp scattering. Under certain conditions grain boundary scattering is expected to be more effective on heat carrying phonons than on Umklapp scattering, causing an increased thermoelectric power. Numerical analysis of thermoelectric power from the present model shows similar results as those revealed from experiments

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2

International Nuclear Information System (INIS)

Sun, Hui; Lu, Xu; Morelli, Donald T.

2016-01-01

Boron-added CoSi, CoSi_0_._9_8B_0_._0_2, possesses a very high thermoelectric power factor of 60 μW cm"−"1 K"−"2 at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi_0_._9_8B_0_._0_2 has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Refinement of Mg2Si reinforcement in a commercial Al–20%Mg2Si in-situ composite with bismuth, antimony and strontium

International Nuclear Information System (INIS)

Nordin, Nur Azmah; Farahany, Saeed; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-01-01

Refinement by addition elements of Al–Mg 2 Si alloys is known to result in a change of primary Mg 2 Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg 2 Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg 2 Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg 2 Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg 2 Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg 2 Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms

Electronic structure of Rh-based CuRh0.9Mg0.1O2 oxide thermoelectrics

Science.gov (United States)

Vilmercati, P.; Martin, E.; Cheney, C. Parks; Bondino, F.; Magnano, E.; Parmigiani, F.; Sasagawa, T.; Mannella, N.

2013-03-01

The electronic structure of the Rh-based CuRh0.9Mg0.1O2 oxide thermoelectric compound has been studied with a multitechnique approach consisting of photoemission, x-ray absorption, and x-ray emission spectroscopies. The data indicate that the region of the valence band in the proximity of the Fermi level is dominated by Rh-derived states. These findings outline the importance of the electronic structure of the Rh ions for the large thermoelectric power in CuRh0.9Mg0.1O2 at high temperature.

Photoluminescence of Mg{sub 2}Si films fabricated by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Liao, Yang-Fang [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Xie, Quan, E-mail: qxie@gzu.edu.cn [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xiao, Qing-Quan [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Engineering Center for Avionics Electrical and Information Network of Guizhou Provincial Colleges and Universities, Anshun 561000 (China); Chen, Qian; Fan, Meng-Hui [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); Xie, Jing [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China); School of Physics and Electronic Science of Guizhou Normal University, Guiyang 550001 (China); Huang, Jin; Zhang, Jin-Min; Ma, Rui; Wang, Shan-Lan; Wu, Hong-Xian; Fang, Di [Institute of Advanced Optoelectronic Materials and Technology of College of BigData and Information Engineering of Guizhou University, Guiyang 550025 (China)

2017-05-01

Highlights: • High quality Mg{sub 2}Si films were grown on Si (111) and glass substrates with magnetron sputtering, respectively. • The first observation of Photoluminescence (PL) of Mg{sub 2}Si films was reported. • The Mg{sub 2}Si PL emission wavelengths are almost independence on temperature in the range of 77–300 K. • The strongest PL emissions may be attributed to interstitial Mg donor level to valence band transitions. • The activation energy of Mg{sub 2}Si is determined from the quenching of major luminescence peaks. - Abstract: To understand the photoluminescence mechanisms and optimize the design of Mg{sub 2}Si-based light-emitting devices, Mg{sub 2}Si films were fabricated on silicon (111) and glass substrates by magnetron sputtering technique, and the influences of different substrates on the photoelectric properties of Mg{sub 2}Si films were investigated systematically. The crystal structure, cross-sectional morphology, composition ratios and temperature-dependent photoluminescence (PL) of the Mg{sub 2}Si films were examined using X-ray diffraction (XRD), Scanning electron microscope (SEM), energy dispersive X-ray spectroscopy (EDS) and PL measurement system, respectively. XRD results indicate that the Mg{sub 2}Si film on Si (111) displays polycrystalline structure, whereas Mg{sub 2}Si film on glass substrate is of like-monocrystalline structure.SEM results show that Mg{sub 2}Si film on glass substrate is very compact with a typical dense columnar structure, and the film on Si substrate represents slight delamination phenomenon. EDS results suggest that the stoichiometry of Mg and Si is approximately 2:1. Photoluminescence (PL) of Mg{sub 2}Si films was observed for the first time. The PL emission wavelengths of Mg{sub 2}Si are almost independence on temperature in the range of 77–300 K. The PL intensity decreases gradually with increasing temperature. The PL intensity of Mg{sub 2}Si films on glass substrate is much larger than that of Mg

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

WS2 as an excellent high-temperature thermoelectric material

KAUST Repository

Gandi, Appala; Schwingenschlö gl, Udo

2014-01-01

The potential of WS2 as a thermoelectric material is assessed. The electronic contribution to the thermoelectric properties is calculated within the constant relaxation time approximation from the electronic band structure, whereas the lattice contribution is evaluated using self-consistently calculated phonon lifetimes. In addition, the dependence of the lattice thermal conductivity on the mean free path of the phonons is determined.

WS2 as an excellent high-temperature thermoelectric material

KAUST Repository

Gandi, Appala

2014-11-25

The potential of WS2 as a thermoelectric material is assessed. The electronic contribution to the thermoelectric properties is calculated within the constant relaxation time approximation from the electronic band structure, whereas the lattice contribution is evaluated using self-consistently calculated phonon lifetimes. In addition, the dependence of the lattice thermal conductivity on the mean free path of the phonons is determined.

THE THERMODYNAMIC PROPERTIES OF MELTS OF DOUBLE SYSTEM MgO – Al2O3, MgO – SiO2, MgO – CaF2, Al2O3 – SiO2, Al2O3 – CaF2, SiO2 – CaF2

Directory of Open Access Journals (Sweden)

В. Судавцова

2012-04-01

Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary

Magnesium and Manganese Silicides For Efficient And Low Cost Thermo-Electric Power Generation

Energy Technology Data Exchange (ETDEWEB)

Trivedi, Sudhir B. [Brimrose Technology Corporation; Kutcher, Susan W. [Brimrose Technology Corporation; Rosemeier, Cory A. [Brimrose Technology Corporation; Mayers, David [Brimrose Technology Corporation; Singh, Jogender [Pennsylvania State University

2013-12-02

Thermoelectric Power Generation (TEPG) is the most efficient and commercially deployable power generation technology for harvesting wasted heat from such things as automobile exhausts, industrial furnaces, and incinerators, and converting it into usable electrical power. We investigated the materials magnesium silicide (Mg2Si) and manganese silicide (MnSi) for TEG. MgSi2 and MnSi are environmentally friendly, have constituent elements that are abundant in the earth's crust, non-toxic, lighter and cheaper. In Phase I, we successfully produced Mg2Si and MnSi material with good TE properties. We developed a novel technique to synthesize Mg2Si with good crystalline quality, which is normally very difficult due to high Mg vapor pressure and its corrosive nature. We produced n-type Mg2Si and p-type MnSi nanocomposite pellets using FAST. Measurements of resistivity and voltage under a temperature gradient indicated a Seebeck coefficient of roughly 120 V/K on average per leg, which is quite respectable. Results indicated however, that issues related to bonding resulted in high resistivity contacts. Determining a bonding process and bonding material that can provide ohmic contact from room temperature to the operating temperature is an essential part of successful device fabrication. Work continues in the development of a process for reproducibly obtaining low resistance electrical contacts.

Modelling of thermoelectric materials

DEFF Research Database (Denmark)

Bjerg, Lasse

In order to discover new good thermoelectric materials, there are essentially two ways. One way is to go to the laboratory, synthesise a new material, and measure the thermoelectric properties. The amount of compounds, which can be investigated this way is limited because the process is time...... consuming. Another approach is to model the thermoelectric properties of a material on a computer. Several crystal structures can be investigated this way without use of much man power. I have chosen the latter approach. Using density functional theory I am able to calculate the band structure of a material....... This band structure I can then use to calculate the thermoelectric properties of the material. With these results I have investigated several materials and found the optimum theoretical doping concentration. If materials with these doping concentrations be synthesised, considerably better thermoelectric...

Refinement of Mg{sub 2}Si reinforcement in a commercial Al–20%Mg{sub 2}Si in-situ composite with bismuth, antimony and strontium

Energy Technology Data Exchange (ETDEWEB)

Nordin, Nur Azmah; Farahany, Saeed, E-mail: saeedfarahany@gmail.com; Ourdjini, Ali; Abu Bakar, Tuty Asma; Hamzah, Esah

2013-12-15

Refinement by addition elements of Al–Mg{sub 2}Si alloys is known to result in a change of primary Mg{sub 2}Si morphology. In this paper, the effects of Bi, Sb and Sr on the characteristic parameters of Al–20%Mg{sub 2}Si in-situ composite have been investigated by computer aided cooling curve thermal analysis and microstructural inspection. Size, density and aspect ratio measurements showed that additions of 0.4 wt.% Bi, 0.8 wt.% Sb and 0.01 wt.% Sr refined the Mg{sub 2}Si reinforcement. Exceeding these concentrations, however, resulted in coarsening of Mg{sub 2}Si particles with no change in the morphology. The results also showed that addition elements caused a decrease in the nucleation and growth temperatures of Mg{sub 2}Si particles. The refining effect of Bi, Sb and Sr is likely to be related to the effect of oxide bifilms suspended in the composite melt as favored nucleation substrates for Mg{sub 2}Si particles. - Highlight: • 0.4 wt.%, 0.8 wt.% and 0.01 wt.% is the optimum content for Bi, Sb and Sr addition. • Exceeding optimum concentration resulted in the coarsening of reinforcements. • Nucleation and growth temperatures decrease with addition of Bi, Sb and Sr. • The refining effect of Bi, Sb and Sr is likely to be related to the oxide bifilms.

Microstructural Analysis of AM50/Mg2Si Cast Magnesium Composites

Directory of Open Access Journals (Sweden)

Malik M.A.

2012-12-01

Full Text Available AM50/Mg2Si composites containing 5.7 wt. % and 9.9 wt. %. of Mg2Si reinforcing phase were prepared successfully by casting method. The microstructure of the cast AM50/Mg2Si magnesium matrix composites was investigated by light microscopy and X-ray diffractometry (XRD. The microstructure of these composites was characterized by the presence of α-phase (a solid solution of aluminium in magnesium, Mg17Al12 (γ-phase, Al8Mn5 and Mg2Si. It was demonstrated that the Mg2Si phase was formed mainly as primary dendrites and eutectic.

Ethanol-to-Butadiene Conversion over SiO2-MgO Catalysts: Synthesis-Structure-Performance Relationships

NARCIS (Netherlands)

Angelici, C.

2015-01-01

The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO

High Temperature Integrated Thermoelectric Ststem and Materials

Energy Technology Data Exchange (ETDEWEB)

Mike S. H. Chu

2011-06-06

. Two composition systems, specifically 1.0 SrO - 0.8 x 1.03 TiO2 - 0.2 x 1.03 NbO2.5 and 0.97 TiO2 - 0.03 NbO2.5, have been identified as good base line compositions for n-type thermoelectric compositions in future module design. Tests of these materials at an outside company were promising using that company's processing and material expertise. There was no unique p-type thermoelectric compositions identified in phase I work other than several current cobaltite materials. Ca3Co4O9 will be the primary p-type material for the future module design until alternative materials are developed. BaTiO3 and rare earth titanate based dielectric compositions show both p-type and n-type behavior even though their electrical conductivities were very low. Further research and development of these materials for thermoelectric applications is planned in the future. A preliminary modeling and optimization of a thermoelectric generator (TEG) that uses the n-type 1.0 SrO - 1.03 x 0.8 TiO2 - 1.03 x 0.2 NbO2.5 was performed. Future work will combine development of ceramic powders and manufacturing expertise at TAM, development of SPS at TAM or a partner organization, and thermoelectric material/module testing, modeling, optimization, production at several partner organizations.

Polarized micro-Raman scattering characterization of Mg2Si nanolayers in (001) Si matrix

International Nuclear Information System (INIS)

Zlateva, G; Atanassov, A; Baleva, M; Nikolova, L; Abrashev, M V

2007-01-01

An orientational growth of the Mg 2 Si lattice relative to the Si lattice is considered assuming minimum mismatch of their lattice parameters. The Raman scattering cross-sections are calculated for the four possible orientations of the Mg 2 Si lattice positioned in this way. The integral intensity ratios for the F 2g mode of Mg 2 Si in different polarization configurations, obtained from the experimental spectra, are compared with the calculated ratios. It is found that the Mg 2 Si nanolayer's morphology is sensitive to the implantation energy, which determines both the peak Mg concentration in the initial implantation profile and its position in the sample depth. At a peak concentration of the order of the stoichiometric concentration, the layers are highly oriented. When the peak concentration is higher and the peak is placed closer to the surface, the layers are polycrystalline

Design of segmented thermoelectric generator based on cost-effective and light-weight thermoelectric alloys

International Nuclear Information System (INIS)

Kim, Hee Seok; Kikuchi, Keiko; Itoh, Takashi; Iida, Tsutomu; Taya, Minoru

2014-01-01

Highlights: • Segmented thermoelectric (TE) module operating at 500 °C for combustion engine system. • Si based light-weight TE generator increases the specific power density [W/kg]. • Study of contact resistance at the bonding interfaces maximizing output power. • Accurate agreement of the theoretical predictions with experimental results. - Abstract: A segmented thermoelectric (TE) generator was designed with higher temperature segments composed of n-type Mg 2 Si and p-type higher manganese silicide (HMS) and lower temperature segments composed of n- and p-type Bi–Te based compounds. Since magnesium and silicon based TE alloys have low densities, they produce a TE module with a high specific power density that is suitable for airborne applications. A two-pair segmented π-shaped TE generator was assembled with low contact resistance materials across bonding interfaces. The peak specific power density of this generator was measured at 42.9 W/kg under a 498 °C temperature difference, which has a good agreement with analytical predictions

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

Science.gov (United States)

Mackey, Jonathan A.; Sehirlioglu, Alp; Dynys, Fred

2015-01-01

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Laser-induced thermoelectric voltage in normal state MgB2 thin films

International Nuclear Information System (INIS)

Zhao Songqing; Zhou Yueliang; Zhao Kun; Wang Shufang; Chen Zhenghao; Jin Kuijuan; Lue Huibin; Cheng Bolin; Yang Guozhen

2006-01-01

Laser-induced voltage has been observed in c-axis oriented MgB 2 thin film at room temperature. The amplitude of the signal is approximately proportional to the film thickness. For the film with the thickness of 150 nm, a very fast response has been detected when the film was irradiated by a 308 nm pulsed laser of 20 ns duration. The rise time and full width at half-maximum of the signal are about 3 and 25 ns, respectively. The physical origin of the laser-induced voltage can be attributed to a transverse thermoelectricity due to the anisotropic thermopower in MgB 2

Spheroidization of primary Mg{sub 2}Si in Al-20Mg{sub 2}Si-4.5Cu alloy modified with Ca and Sb during T6 heat treatment process

Energy Technology Data Exchange (ETDEWEB)

Yu, Hong-Chen; Wang, Hui-Yuan, E-mail: wanghuiyuan@jlu.edu.cn; Chen, Lei; Zha, Min, E-mail: minzha@jlu.edu.cn; Wang, Cheng; Li, Chao; Jiang, Qi-Chuan

2017-02-08

The morphology evolution of primary Mg{sub 2}Si particles in a Al-20Mg{sub 2}Si-4.5Cu alloy both unmodified and modified with 0.5 wt% Ca-Sb prepared by hot-extrusion followed by T6 heat treatment was investigated in the present study. Interestingly, we found that the combination of hot-extrusion and T6 heat treatment was efficient in transforming truncated octahedral primary Mg{sub 2}Si into sphere in the modified alloy. In contrast, the primary Mg{sub 2}Si particles still kept dentritic in the unmodified alloy. It suggested that the formation of truncated octahedral primary Mg{sub 2}Si particles in as-cast state, the fragmentation of particles by hot-extrusion and the enhanced solid-state diffusion of Si and/or Mg atoms during heat treatment were responsible for the spheroidization of primary Mg{sub 2}Si. Moreover, the existence of fine (~10–20 µm) spherical primary Mg{sub 2}Si played an important role in strengthening the alloy, i.e., the ultimate tensile strength (UTS) increased from ~227 MPa in the unmodified alloy to ~303 MPa in the modified one. It is because the fine spherical primary Mg{sub 2}Si particles can provide a higher fracture stress and strength of the matrix/particle interface. Our study offered a simple methodology to prepare spherical primary Mg{sub 2}Si in an Al-high Mg{sub 2}Si alloy, which is beneficial to design novel light-weight Al-Mg-Si alloys with improved mechanical properties.

Ex-situ manufacturing of SiC-doped MgB2 used for superconducting wire in medical device applications

Science.gov (United States)

Herbirowo, Satrio; Imaduddin, Agung; Sofyan, Nofrijon; Yuwono, Akhmad Herman

2017-02-01

Magnesium diboride (MgB2) is a superconductor material with a relatively high critical temperature. Due to its relatively high critical temperature, this material is promising and has the potential to replace Nb3Sn for wire superconducting used in many medical devices. In this work, nanoparticle SiC-doped MgB2 superconducting material has been fabricated through an ex-situ method. The doping of nanoparticle SiC by 10 and 15 wt% was conducted to analyze its effect on specific resistivity of MgB2. The experiment was started by weighing a stoichiometric amount of MgB2 and nanoparticles SiC. Both materials were mixed and grounded for 30 minutes by using an agate mortar. The specimens were then pressed into a 6 mm diameter stainless steel tube, which was then reduced until 3 mm through a wire drawing method. X-ray diffraction analysis was conducted to confirm the phase, whereas the superconductivity of the specimens was analyzed by using resistivity measurement under cryogenic magnetic system. The results indicated that the commercial MgB2 showed a critical temperature of 37.5 K whereas the SiC doped MgB2 has critical temperature of 38.3 K.

Thermal conductivity of M-Si-N (M = Mg, Ca, Sr, Ba) compounds with varying M/Si ratio

NARCIS (Netherlands)

Hintzen, H.T.J.M.; Bruls, R.J.; Delsing, A.C.A.; Itatani, K.; Tanaka, S.; With, de G.; Metselaar, R.

2002-01-01

The thermal cond. of M-Si-N (M = Mg, Ca, Sr, Ba) compds. was examd. The emphasis is on MgSiN2 (a material which can be derived from AlN by replacing systematically 2Al3+ by Mg2+/Si4+), and Si3N4 (the well known b-modification as well as the recently discovered cubic modification with the spinel

Structure of Mg2SiO4 glass up to 140 GPa

Science.gov (United States)

Prescher, C.; Prakapenka, V.; Wang, Y.; Skinner, L. B.

2014-12-01

The physical properties of melts at temperature and pressure conditions of the Earth's mantle have a fundamental influence on the chemical and thermal evolution of the Earth. However, direct investigations of melt structures at these conditions are experimentally very difficult or even impossible with current capabilities. In order to still be able to obtain an estimate of the structural behavior of melts at high pressures and temperatures, amorphous materials have been widely used as analogue materials. In particular the investigation of sound wave velocities of amorphous SiO2 and MgSiO3 as analogues for silicate melts indicate structural changes at about ~30-40 GPa and ~130-140 GPa [1]. The transition pressures are lower for MgSiO3 than for SiO2 indicating that these transitions are affected by the degree of polymerization of the SiO2 network of the glasses. Nevertheless, these measurements only give a hint about the occurrence of structural transitions but lack information on the actual structural changes accompanied by the sound wave velocity discontinuities. The pressure of the second structural transition at ~130-140 GPa is of vital importance for geophysics. If it causes silicate melts to become denser than the surrounding solid material, it would result in negatively buoyant melts close to the core-mantle boundary, which could be a major factor affecting the chemical stratification of the Earth's mantle during an early magma ocean after the moon forming impact. In order to resolve the structural transition and estimate the effect of a different degree of polymerization further, we studied the structural behavior of Mg2SiO4 glass up to 140 GPa using X-ray total scattering and pair distribution function analysis. The measurements were performed at the GSECARS 13-IDD beamline at the APS employing the newly developed multichannel collimator (MCC) setup. The MCC effectively removes unwanted Compton scattering of the diamond anvils and enables easy extraction of

Modeling a Thermoelectric Generator Applied to Diesel Automotive Heat Recovery

Science.gov (United States)

Espinosa, N.; Lazard, M.; Aixala, L.; Scherrer, H.

2010-09-01

Thermoelectric generators (TEGs) are outstanding devices for automotive waste heat recovery. Their packaging, lack of moving parts, and direct heat to electrical conversion are the main benefits. Usually, TEGs are modeled with a constant hot-source temperature. However, energy in exhaust gases is limited, thus leading to a temperature decrease as heat is recovered. Therefore thermoelectric properties change along the TEG, affecting performance. A thermoelectric generator composed of Mg2Si/Zn4Sb3 for high temperatures followed by Bi2Te3 for low temperatures has been modeled using engineering equation solver (EES) software. The model uses the finite-difference method with a strip-fins convective heat transfer coefficient. It has been validated on a commercial module with well-known properties. The thermoelectric connection and the number of thermoelements have been addressed as well as the optimum proportion of high-temperature material for a given thermoelectric heat exchanger. TEG output power has been estimated for a typical commercial vehicle at 90°C coolant temperature.

Solvothermal synthesis of Mg-doped Li2FeSiO4/C nanocomposite cathode materials for lithium-ion batteries

Science.gov (United States)

Kumar, Ajay; Jayakumar, O. D.; Naik, V. M.; Nazri, G. A.; Naik, R.

Lithium transition metal orthosilicates, such as Li2FeSiO4 and Li2MnSiO4, as cathode material have attracted much attention lately due to their high theoretical capacity ( 330 mAh/g), low cost, and environmental friendliness. However, they suffer from poor electronic conductivity and slow lithium ion diffusion in the solid phase. Several cation-doped orthosilicates have been studied to improve their electrochemical performance. We have synthesized partially Mg-substituted Li2Mgx Fe1-x SiO4-C, (x = 0.0, 0.01, 0.02, and 0.04) nano-composites by solvothermal method followed by annealing at 600oC in argon flow. The structure and morphology of the composites were characterized by XRD, SEM and TEM. The surface area and pore size distribution were measured by using N2 adsorption/desorption curves. The electrochemical performance of the Li2MgxFe1-x SiO4-C composites was evaluated by Galvanostatic cycling against metallic lithium anode, electrochemical impedance spectroscopy, and cyclic voltammetry. Li2Mg0.01Fe0.99SiO4-C sample shows a capacity of 278 mAh/g (at C/30 rate in the 1.5-4.6 V voltage window) with an excellent rate capability and stability, compared to the other samples. We attribute this observation to its higher surface area, enhanced electronic conductivity and higher lithium ion diffusion coefficient.

Resonant Raman scattering in ion-beam-synthesized Mg2Si in a silicon matrix

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.; Atanassov, A.; Abrashev, M.; Goranova, E.

2005-01-01

Resonant Raman scattering by ion beam synthesized in silicon matrix Mg 2 Si phase is studied. The samples are prepared with the implantation of 24 Mg + ions with dose 4x10 17 cm -2 and with two different energies 40 and 60 keV into (100)Si substrates. The far infrared spectra are used as criteria for the formation of the Mg 2 Si phase. The Raman spectra are excited with different lines of Ar + laser, with energies of the lines lying in the interval from 2.40 to 2.75 eV. The resonant scattering can be investigated using these laser lines, as far as according to the Mg 2 Si band structure, there are direct gaps with energies in the same region. The energy dependences of the scattered intensities in the case of the scattering by the allowed F 2g and the forbidden LO-type modes are experimentally obtained and theoretically interpreted. On the base of the investigation energies of the interband transitions in the Mg 2 Si are determined. It is found also that the resonant Raman scattering appears to be a powerful tool for characterization of a material with inclusions in it. In the particular case it is concluded that the Mg 2 Si phase is present in the form of a surface layer in the sample, prepared with implantation energy 40 keV and as low-dimensional precipitates, embedded in the silicon matrix, in the sample, prepared with the higher implantation energy

A MODIFIED VAN DER PAUW SETUP FOR MEASURING THE RESISTIVITY AND THERMOPOWER OF THERMOELECTRIC MATERIALS OF VARYING THICKNESSES

KAUST Repository

HITCHCOCK, DALE

2013-10-01

In the investigation of thermoelectric (TE) materials as a practical, and efficient, means of power generation/ refrigeration nearly ninety percent of the possible high-efficient binary compounds have been evaluated. But only a few proved to be useful such as Bi2Te3 alloys, PbTe and SiGe to name the most important materials. Therefore, in order to expand the research of high-efficiency TE materials new compounds and methods of efficiency optimization must be explored. There currently exist a vast number of uninvestigated ternary and quaternary materials that could be potential high-efficiency thermoelectric materials. The device and methodology discussed herein deal with rapidly measuring both the electrical resistivity and the Seebeck coefficient of thermoelectric materials, at a set temperature of T ≈ 300 K. Using nontraditional resistivity measurements and rapid, room-temperature thermopower measurements, a reliable and time-efficient means of gauging the power factor (defined below) values of newly synthesized thermoelectric materials is achievable. Furthermore, the efficacy of the van der Pauw technique for measuring the resistivity of thermoelectric materials has been verified. © World Scientific Publishing Company.

A MODIFIED VAN DER PAUW SETUP FOR MEASURING THE RESISTIVITY AND THERMOPOWER OF THERMOELECTRIC MATERIALS OF VARYING THICKNESSES

KAUST Repository

HITCHCOCK, DALE; WALDROP, SPENCER; WILLIAMS, JARED; TRITT, TERRY M.

2013-01-01

In the investigation of thermoelectric (TE) materials as a practical, and efficient, means of power generation/ refrigeration nearly ninety percent of the possible high-efficient binary compounds have been evaluated. But only a few proved to be useful such as Bi2Te3 alloys, PbTe and SiGe to name the most important materials. Therefore, in order to expand the research of high-efficiency TE materials new compounds and methods of efficiency optimization must be explored. There currently exist a vast number of uninvestigated ternary and quaternary materials that could be potential high-efficiency thermoelectric materials. The device and methodology discussed herein deal with rapidly measuring both the electrical resistivity and the Seebeck coefficient of thermoelectric materials, at a set temperature of T ≈ 300 K. Using nontraditional resistivity measurements and rapid, room-temperature thermopower measurements, a reliable and time-efficient means of gauging the power factor (defined below) values of newly synthesized thermoelectric materials is achievable. Furthermore, the efficacy of the van der Pauw technique for measuring the resistivity of thermoelectric materials has been verified. © World Scientific Publishing Company.

High-performance thermoelectric materials based on ternary TiO2/CNT/PANI composites.

Science.gov (United States)

Erden, Fuat; Li, Hui; Wang, Xizu; Wang, FuKe; He, Chaobin

2018-04-04

In the present work, we report the fabrication of high-performance thermoelectric materials using TiO2/CNT/PANI ternary composites. We showed that a conductivity of ∼2730 S cm-1 can be achieved for the binary CNT (70%)/PANI (30%) composite, which is the highest recorded value for the reported CNT/PANI composites. We further demonstrated that the Seebeck coefficient of CNT/PANI composites could be enhanced by incorporating TiO2 nanoparticles into the binary CNT/PANI composites, which could be attributed to lower carrier density and the energy scattering of low-energy carriers at the interfaces of TiO2/a-CNT and TiO2/PANI. The resulting TiO2/a-CNT/PANI ternary system exhibits a higher Seebeck coefficient and enhanced thermoelectric power. Further optimization of the thermoelectric power was achieved by water treatment and by tuning the processing temperature. A high thermoelectric power factor of 114.5 μW mK-2 was obtained for the ternary composite of 30% TiO2/70% (a-CNT (70%)/PANI (30%)), which is the highest reported value among the reported PANI based ternary composites. The improvement of thermoelectric performance by incorporation of TiO2 suggests a promising approach to enhance power factor of organic thermoelectric materials by judicial tuning of the carrier concentration and electrical conductivity.

Investigation of TL, OSL and PTTL properties of Mg2SiO4:Tb dosimeters

International Nuclear Information System (INIS)

Oguz, K. F.; Goekce, M.; Karali, T.; Harmansah, C.

2010-01-01

In this study thermoluminescence (TL) and optically stimulated luminescence (OSL) properties of Mg 2 SiO 4 :Tb in the form of sintered pellets were investigated. Mg 2 SiO 4 :Tb is a recently developed dosimetric material which offers high sensitivity for TL and OSL in dosimetric applications. Thermoluminescence glow curve of Tb doped Mg 2 SiO 4 samples show a glow peak at about 200 degree Celsius with two small peaks at about 275 and 330 degree Celsius, respectively. OSL experiments showed that blue light (470 nm) is six times more efficient than green light (532 nm) to stimulate the OSL emission. The aim of this study was to determine the TL and OSL fading properties of Mg 2 SiO 4 : Tb using OSL and TL methods. In addition, PTTL properties of the Mg 2 SiO 4 : Tb was investigated by using blue LEDs, UV lamp and blue laser. Investigations on the fading properties also showed that the TL signal fades % 10 in a period of 1 month and OSL signal fades % 10 in a period of 3 month, which then the signal remains relatively stable for longer periods.

Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

KAUST Repository

Abutaha, Anas I.

2015-01-01

of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate

紫外应力发光材料SrMgSi2O6∶Ce的制备与光谱性质研究%Ultraviolet Mechanoluminescence from SrMgSi2O6∶ Ce

Institute of Scientific and Technical Information of China (English)

付晓燕; 房立均; 付海霞; 张洪武

2013-01-01

UV mechanoluminescent (ML) phosphors SrMgSi2O6 ∶ Ce0.005,SrMgSi2O6∶Ce0.005,Er0.015 and Sr2 MgSi2O7∶ Ce0.005,Er0.015 were prepared via solid state reaction.The XRD results indicate that the structure of SrMgSi2O6 is identical to that of Sr2MgSi2O7,which has a tetragonal symmetry with a space group P421m.The emission bands of three samples are similar,which consist of a broad band with two peaks centered at 349 and 371 nm,caused by the f-d electron transition of Ce3+ ions.The ML results show that the ML intensities of these samples are well depended on the stress,indicating that these ML materials can be potentially used as sensors to detect the stress distribution of an object.Furthermore,the ML intensity of SrMgSi2O6∶Ce0.005,Er0.015 is obviously higher than those of SrMgSi2O6∶ Ce0.005 and Sr2MgSi2O7∶Ce0.005,Er0.015.The obtained results suggest that the trap and the worse symmetry of crystal structure are responsible for the higher ML intensity of SrMgSi2O6∶Ce0.005,Er0.015.Because of the UV emission of this material,it can be used as the excitation source to irradiate other color phosphors and then the various colors ML can be realized.%采用固相烧结法制备了3种紫外应力发光材料SrMgSi2O6∶Ce0.005、SrMgSi2O6∶Ce0005,Er0.015和Sr2MgSi2O7∶Ce0.005,Er0015.XRD测试结果表明:SrMgSi2O6与Sr2MgSi2O7具有相同的结构,掺杂离子的加入没有改变相结构.3种样品的荧光发射光谱很类似,均在330～400 nm紫外波段有较宽的发射谱带.应力发光曲线的测试结果表明,样品的应力发光强度与物体受力变化呈良好的对应关系,证明所制备的样品可以用来检测物体的受力情况.同时,研究了共掺杂离子以及改变基质结构对应力发光强度的影响,结果表明发光体中陷阱数目的增加以及基质对称性的降低有利于应力发光的产生.由于所开发的样品波长在紫外区,因而可以作为光源来激发其他颜色的光致发光材料从而实现多颜色应力发光材料的开发.

Influence of acid-base properties on the Lebedev ethanol-to-butadiene process catalyzed by SiO2-MgO materials

NARCIS (Netherlands)

Angelici, Carlo; Velthoen, Marjolein E. Z.; Weckhuysen, Bert M.; Bruijnincx, Pieter C. A.

2015-01-01

The Lebedev ethanol-to-butadiene process entails a complex chain of reactions that require catalysts to possess a subtle balance in the number and strength of acidic and basic sites. SiO2-MgO materials can be excellent Lebedev catalysts if properly prepared, as catalyst performance has been found to

Interface reactions in the Al-Si-SiC and Mg-Al-Al{sub 2}O{sub 3} composite systems

Energy Technology Data Exchange (ETDEWEB)

Johnson, P.K. [Commission of the European Communities, Petten (Netherlands). Inst. for Advanced Materials; Fazal-Ur-Rehman [Imperial Coll. of Science, Technology and Medicine, London (United Kingdom). Dept. of Materials; Fox, S. [Imperial Coll. of Science, Technology and Medicine, London (United Kingdom). Dept. of Materials; Flower, H.M. [Imperial Coll. of Science, Technology and Medicine, London (United Kingdom). Dept. of Materials; West, D.R.F.

1995-12-31

Structural and compositional observations are reported on the influence of the interfaces on the mechanisms and kinetics of liquid metal-ceramic reactions in Al-SiC, Al-Si-SiC, Mg-Al{sub 2}O{sub 3} and Mg-Al-Al{sub 2}O{sub 3} composites. The aluminium based materials contained up to 20 vol% SiC in particulate form, and were produced by a spray casting process; subsequently the interface reactions were studied in samples heated to temperatures up to 1100 C. The reaction product was Al{sub 4}C{sub 3} in both Al-SiC and Al-Si-SiC composites. The influence of the crystallography and topology of the SiC particle surfaces on the nucleation of the Al{sub 4}C{sub 3} has been demonstrated; surface asperities play an important role. Growth of nuclei proceeds to form continuous reaction product layers which control the subsequent kinetics. The magnesium based composites contained 5 vol% Al{sub 2}O{sub 3} fibres (3 {mu}m in diameter), and were produced by a liquid infiltration process. SD Safimax fibres with relatively low and high porosity, and also RF Saffil fibres, with a silica binder, were investigated. Fibre porosity plays a major role in accelerating the penetration of Mg into the fibres with reaction to form MgO. Silica binder on the fibre surface transforms to MgO. The reaction rate was reduced by the presence of aluminium in the matrix. The factors controlling the reactions in the aluminium and magnesium based composites are compared. (orig.)

Parameters of thermoelectric power and electronic structure of Yb-based compounds of YbM2X2(M=Fe,Co,Ni,Cu; X=Si,Ge) type

International Nuclear Information System (INIS)

Levin, E.M.; Kuzhel', B.S.

1990-01-01

Thermoelectric power of Yb-based intermetallic alloys YbM 2 Si 2 (M-Co,Ni,Cu) and YbM 2 Ge 2 (M=Fe,Co,Ni) have been investigated and found to have anomalous low-temperature peaks conditioned by intermediate Yb valency. Calculation of electronic structure parameters performed in frames of the localized Fermi-liquid model using experimental data on the thermoelectric power is in good agreement with results of YbCu 2 Si 2 band structure calculation based on the experimental value of the electronic heat capacity with regard for the (2J+1) - fold Yb 2+ degeneration

Effect of local atomic and electronic structures on thermoelectric properties of chemically substituted CoSi

Science.gov (United States)

Hsu, C. C.; Pao, C. W.; Chen, J. L.; Chen, C. L.; Dong, C. L.; Liu, Y. S.; Lee, J. F.; Chan, T. S.; Chang, C. L.; Kuo, Y. K.; Lue, C. S.

2014-05-01

We report the effects of Ge partial substitution for Si on local atomic and electronic structures of thermoelectric materials in binary compound cobalt monosilicides (\\text{CoSi}_{1-x}\\text{Ge}_{x}\\text{:}\\ 0 \\le x \\le 0.15 ). Correlations between local atomic/electronic structure and thermoelectric properties are investigated by means of X-ray absorption spectroscopy. The spectroscopic results indicate that as Ge is partially substituted onto Si sites at x \\le 0.05 , Co in CoSi1-xGex gains a certain amount of charge in its 3d orbitals. Contrarily, upon further replacing Si with Ge at x \\ge 0.05 , the Co 3d orbitals start to lose some of their charge. Notably, thermopower is strongly correlated with charge redistribution in the Co 3d orbital, and the observed charge transfer between Ge and Co is responsible for the variation of Co 3d occupancy number. In addition to Seebeck coefficient, which can be modified by tailoring the Co 3d states, local lattice disorder may also be beneficial in enhancing the thermoelectric properties. Extended X-ray absorption fine structure spectrum results further demonstrate that the lattice phonons can be enhanced by Ge doping, which results in the formation of the disordered Co-Co pair. Improvements in the thermoelectric properties are interpreted based on the variation of local atomic and electronic structure induced by lattice distortion through chemical substitution.

Microwave plasma synthesis of Si/Ge and Si/WSi2 nanoparticles for thermoelectric applications

Science.gov (United States)

Petermann, Nils; Schneider, Tom; Stötzel, Julia; Stein, Niklas; Weise, Claudia; Wlokas, Irenäus; Schierning, Gabi; Wiggers, Hartmut

2015-08-01

The utilization of microwave-based plasma systems enables a contamination-free synthesis of highly specific nanoparticles in the gas phase. A reactor setup allowing stable, long-term operation was developed with the support of computational fluid dynamics. This paper highlights the prospects of gas-phase plasma synthesis to produce specific materials for bulk thermoelectrics. Taking advantage of specific plasma reactor properties such as Coulomb repulsion in combination with gas temperatures considerably higher than 1000 K, spherical and non-aggregated nanoparticles of multiple compositions are accessible. Different strategies towards various nanostructured composites and alloys are discussed. It is shown that, based on doped silicon/germanium alloys and composites, thermoelectric materials with zT values up to almost unity can be synthesized in one step. First experimental results concerning silicon/tungsten silicide thermoelectrics applying the nanoparticle-in-alloy idea are presented indicating that this concept might work. However, it is found that tungsten silicides show a surprising sinter activity more than 1000 K below their melting temperature.

3D printing of shape-conformable thermoelectric materials using all-inorganic Bi2Te3-based inks

Science.gov (United States)

Kim, Fredrick; Kwon, Beomjin; Eom, Youngho; Lee, Ji Eun; Park, Sangmin; Jo, Seungki; Park, Sung Hoon; Kim, Bong-Seo; Im, Hye Jin; Lee, Min Ho; Min, Tae Sik; Kim, Kyung Tae; Chae, Han Gi; King, William P.; Son, Jae Sung

2018-04-01

Thermoelectric energy conversion offers a unique solution for generating electricity from waste heat. However, despite recent improvements in the efficiency of thermoelectric materials, the widespread application of thermoelectric generators has been hampered by challenges in fabricating thermoelectric materials with appropriate dimensions to perfectly fit heat sources. Herein, we report an extrusion-based three-dimensional printing method to produce thermoelectric materials with geometries suitable for heat sources. All-inorganic viscoelastic inks were synthesized using Sb2Te3 chalcogenidometallate ions as inorganic binders for Bi2Te3-based particles. Three-dimensional printed materials with various geometries showed homogenous thermoelectric properties, and their dimensionless figure-of-merit values of 0.9 (p-type) and 0.6 (n-type) were comparable to the bulk values. Conformal cylindrical thermoelectric generators made of 3D-printed half rings mounted on an alumina pipe were studied both experimentally and computationally. Simulations show that the power output of the conformal, shape-optimized generator is higher than that of conventional planar generators.

Microstructure and Mechanical Properties of Dissimilar Joints of Al-Mg2Si and 5052 Aluminum Alloy by Friction Stir Welding

Science.gov (United States)

Huang, B. W.; Qin, Q. D.; Zhang, D. H.; Wu, Y. J.; Su, X. D.

2018-03-01

Al-Mg2Si alloy and 5052 Al alloy were welded successfully by friction stir welding (FSW) in this study. The results show that the alloy consists of three distinct zones after FSW: the base material zone (BMZ), the transitional zone, and the weld nugget (WN). The morphologies of the primary Mg2Si phases are identified as coarse equiaxed crystals for Al-Mg2Si alloys in the BMZ. The WN is a mixture of rich Al-Mg2Si and rich 5052 alloy, and a banded structure is formed in the zone. Interestingly, in the WN, the equiaxed crystals changed to polygonal particles with substantially reduced sizes in the rich Al-Mg2Si zone. However, in addition to the white rich Mg phase appearing in the rich 5052 zone near the interface, the 5052 alloy does not show obvious changes. The hardness gradually increases from the BMZ of the 5052 to the welded joint to the Al-Mg2Si BMZ. In addition, the ultimate tensile strength (UTS) of the welded joint is higher than that of the base material of the Al-Mg2Si, whereas it is lower than that of the 5052 base alloy. The results of the elongation are similar to the UTS results. The fracture mechanism is also investigated.

On the roles of the dopants in LiF: Mg,Cu,Na,Si thermoluminescent material

International Nuclear Information System (INIS)

Lee, J. I.; Kim, J. L.; Chang, S. Y.; Chung, K. S.; Choe, H. S.

2005-01-01

In this paper, some results of the study on the roles of the dopants in the LiF:Mg,Cu,Na,Si thermoluminescent (TL) material that was developed at the Korea Atomic Energy Research Inst. for radiation protection are presented. Although there have been many studies to investigate the roles of the dopants in LiF:Mg,Cu,P TL material in the TL process, there are some discrepancies in the understanding of the roles of Cu and P between various researchers. In case of LiF:Mg,Cu,Na,Si TL material, there are a few studies on the roles of the dopants. Three kinds of samples in each of which one dopant is excluded, and the optimised sample, were prepared for this study. The measurements and analysis of the three-dimensional TL spectra, based on the temperature, wavelength and intensity, and the glow curves for those samples are used in this study. The results show that Mg plays a role in the trapping of the charge carriers and Cu plays a role in the luminescence recombination process; however, the effect of Na and Si on the glow curve structure and the TL emission spectra is much less than that of Mg and Cu. It is considered that Na and Si each plays a role in the improvement of the luminescence efficiency. (authors)

Development and Characterisation of Aluminium Matrix Nanocomposites AlSi10Mg/MgAl2O4 by Laser Powder Bed Fusion

Directory of Open Access Journals (Sweden)

Giulio Marchese

2018-03-01

Full Text Available Recently, additive manufacturing techniques have been gaining attention for the fabrication of parts from aluminium alloys to composites. In this work, the processing of an AlSi10Mg based composite reinforced with 0.5% in weight of MgAl2O4 nanoparticles through laser powder bed fusion (LPBF process is presented. After an initial investigation about the effect of process parameters on the densification levels, the LPBF materials were analysed in terms of microstructure, thermo-mechanical and mechanical properties. The presence of MgAl2O4 nanoparticles involves an increment of the volumetric energy density delivered to the materials, in order to fabricate samples with high densification levels similar to the AlSi10Mg samples. However, the application of different building parameters results in modifying the size of the cellular structures influencing the mechanical properties and therefore, limiting the strengthening effect of the reinforcement.

Karakterisasi Paduan AlMgSi Untuk Kelongsong Bahan Bakar U3Si2/Al Dengan Densitas Uranium 5,2 gU/cm3

Directory of Open Access Journals (Sweden)

Aslina Br. Ginting

2018-03-01

Full Text Available Meningkatnya densitas uranium dari 2,96 gU/cm3 menjadi 5,2 gU/cm3 bahan bakar U3Si2/Al harus diikuti dengan penggunaan kelongsong yang kompatibel. Bahan bakar berdensitas tinggi mempunyai kekerasan yang tinggi, sehingga bila menggunakan paduan AlMg2 sebagai kelongsong dapat menyebabkan terjadi dogbone pada saat perolan. Selain fenomena dogbone, pada saat bahan bakar tersebut digunakan di reaktor dapat terjadi swelling karena meningkatnya hasil fisi maupun burn up. Oleh karena itu, perlu dicari pengganti bahan kelongsong untuk bahan bakar U3Si2/Al densitas tinggi. Pada penelitian ini telah dilakukan karakterisasi paduan AlMgSi sebagai kandidat pengganti kelongsong AlMg2. Karakterisasi yang dilakukan meliputi analisis termal, kekerasan, mikrostruktur dan laju korosi. Analisis termal dilakukan menggunakan DTA (Differential Thermal Analysis dan DSC (Differential Scanning Calorimetry. Analisis kekerasan menggunakan alat uji kekerasan mikro, mikrostruktur menggunakan SEM (Scanning Electron Microscope dan analisis laju korosi dilakukan dengan pemanasan pada temperatur 150 oC selama 77 jam di dalam autoclave. Hasil analisis menunjukkan bahwa kelongsong AlMgSi maupun AlMg2 mempunyai kompatibilitas panas dengan bahan bakar U3Si2/Al cukup stabil hingga temperatur 650 oC. Kelongsong AlMgSi mempunyai kekerasan sebesar 115 HVN dan kelongsong AlMg2 sebesar 70,1 HVN. Sementara itu, analisis mikrostruktur menunjukkan bahwa morfologi ikatan antarmuka (interface bonding kelongsong AlMgSi lebih baik dari kelongsong AlMg2, demikian halnya dengan laju korosi bahwa kelongsong AlMgSi mempunyai laju korosi lebih kecil dibanding kelongsong AlMg2. Hasil karakterisasi termal, kekerasan, mikrostruktur dan laju korosi menunjukkan bahwa PEB U3Si2/Al densitas 5,2 gU/cm3 menggunakan kelongsong AlMgSi lebih baik dibanding PEB U3Si2/Al  densitas 5,2 gU/cm3  menggunakan kelongsong AlMg2. Kata kunci: U3Si2/Al, densitas 5,2 gU/cm3, kelongsong AlMgSi dan AlMg2.

SHS synthesis of Si-SiC composite powders using Mg and reactants from industrial waste

Science.gov (United States)

Chanadee, Tawat

2017-11-01

Si-SiC composite powders were synthesized by self-propagating high-temperature synthesis (SHS) using reactants of fly ash-based silica, sawdust-based activated carbon, and magnesium. Fly ash-based silica and sawdust-based activated carbon were prepared from coal mining fly ash and Para rubber-wood sawdust, respectively. The work investigated the effects of the synthesis atmosphere (air and Ar) on the phase and morphology of the SHS products. The SHS product was leached by a two-step acid leaching processes, to obtain the Si-SiC composite powder. The SHS product and SHS product after leaching were characterized by X-ray diffractometry, scanning electron microscopy and energy dispersive X-ray spectrometry. The results indicated that the SHS product synthesized in air consisted of Si, SiC, MgO, and intermediate phases (SiO2, Mg, Mg2SiO4, Mg2Si), whereas the SHS product synthesized in Ar consisted of Si, SiC, MgO and a little Mg2SiO4. The SiC content in the leached-SHS product was higher when Ar was used as the synthesis atmosphere. As well as affecting the purity, the synthesis atmospheres also affected the average crystalline sizes of the products. The crystalline size of the product synthesized in Ar was smaller than that of the product synthesized in air. All of the results showed that fly ash and sawdust could be effective waste-material reactants for the synthesis of Si-SiC composite powders.

Transport and first-principles study of novel thermoelectric materials

Science.gov (United States)

Chi, Hang

Thermoelectric materials can recover waste industrial heat and convert it to electricity as well as provide efficient local cooling of electronic devices. The efficiency of such environmentally responsible and exceptionally reliable solid state energy conversion is determined by the dimensionless figure-of-merit ZT = alpha2 sigmaT/kappa, where alpha is the Seebeck coefficient, sigma is the electrical conductivity, kappa is the thermal conductivity, and T is the absolute temperature. The goal of the thesis is to (i) illustrate the physics to achieve high ZT of advanced thermoelectric materials and (ii) explore fundamental structure and transport properties in novel condensed matter systems, via an approach combining comprehensive experimental techniques and state-of-the-art first-principles simulation methods. Thermo-galvanomagnetic transport coefficients are derived from Onsager's reciprocal relations and evaluated via solving Boltzmann transport equation using Fermi-Dirac statistics, under the relaxation time approximation. Such understanding provides insights on enhancing ZT through two physically intuitive and very effective routes: (i) improving power factor PF = alpha2sigma; and (ii) reducing thermal conductivity kappa, as demonstrated in the cases of Mg2Si1-xSnx solid solution and Ge/Te double substituted skutterudites CoSb3(1-x)Ge1.5x Te1.5x, respectively. Motivated by recent theoretical predictions of enhanced thermoelectric performance in highly mismatched alloys, ZnTe:N molecular beam epitaxy (MBE) films deposited on GaAs (100) substrates are carefully examined, which leads to a surprising discovery of significant phonon-drag thermopower (reaching 1-2 mV/K-1) at ~13 K. Further systematic study in Bi2Te3 MBE thin films grown on sapphire (0001) and/or BaF2 (111) substrates, reveal that the peak of phonon drag can be tuned by the choice of substrates with different Debye temperatures. Moreover, the detailed transport and structure studies of Bi2-xTl xTe3

Hydrogen desorption properties of MgH2–Ni–Ni2Si composites prepared by mechanochemical method

International Nuclear Information System (INIS)

Shimada, Motoki; Higuchi, Eiji; Inoue, Hiroshi

2013-01-01

Highlights: ► The MgH 2 –Ni composite showed fast hydrogen desorption rate at 250 °C. ► The MgH 2 –Ni–Ni 2 Si composite showed fast hydrogen desorption rate at 220 °C. ► Nanocrystalline Mg 2 Ni and Mg 2 Si were formed between Mg and adjacent Ni or Si. ► Ni 2 Si did not form any alloys and work as a catalyst. -- Abstract: To improve hydrogen desorbability of Mg, some composites were prepared from MgH 2 , Ni and Ni 2 Si mixed powders by the mechanochemical method. The MgH 2 –Ni(2 mol%)–Ni 2 Si(1 mol%) composite was slower in hydrogen desorption rate at 250 °C than the MgH 2 –Ni(2 mol%) composite, while the hydrogen desorption rate at 220 °C for the former was faster than that for the latter. The XRD pattern of the MgH 2 –Ni(2 mol%) composite showed that after hydrogen desorption at 400 °C small diffraction peaks assigned to Mg 2 Ni were observed with peaks assigned to Mg. They shifted to smaller angles after hydrogen absorption at 250 °C and come back to the original positions after hydrogen desorption at 250 °C, suggesting reversible hydrogen absorption/desorption of Mg 2 Ni. In contrast, Ni 2 Si was not changed over the whole processes. These results indicated that Ni 2 Si worked as a catalyst for hydrogen desorption, leading to the improvement of desorbability at 220 °C

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Pulsed current activated synthesis and rapid consolidation of a nanostructured Mg2Al4Si5O18 and its mechanical properties

Science.gov (United States)

Shon, In-Jin; Kang, Hyun-Su; Doh, Jung-Mann; Yoon, Jin-Kook

2015-03-01

Nanocrystalline materials have received much attention as advanced engineering materials, with improved mechanical properties. Attention has been directed to the application of nanomaterials, as they possess excellent mechanical properties (high strength, high hardness, excellent ductility and toughness). A singlestep synthesis and consolidation of nanostructured Mg2Al4Si5O18 was achieved by pulsed current heating, using the stoichiometric mixture of MgO, Al2O3 and SiO2 powders. Before sintering, the powder mixture was high-energy ball milled for 10 h. From the milled powder mixture, a highly dense nanostructured Mg2Al4Si5O18 compound could be obtained within one minute, under the simultaneous application of 80 MPa pressure, and a pulsed current. The advantage of this process is that it allows an instant densification to the near theoretical density, while sustaining the nanosized microstructure of raw powders. The sintering behavior, microstructure and mechanical properties of Mg2Al4Si5O18 were evaluated. The fracture toughness of a nanostructured Mg2Al4Si5O18 compound was higher than that of sub-micron Mg2Al4Si5O18 compound.

Methods of synthesizing thermoelectric materials

Science.gov (United States)

Ren, Zhifeng; Chen, Shuo; Liu, Wei-Shu; Wang, Hengzhi; Wang, Hui; Yu, Bo; Chen, Gang

2016-04-05

Methods for synthesis of thermoelectric materials are disclosed. In some embodiments, a method of fabricating a thermoelectric material includes generating a plurality of nanoparticles from a starting material comprising one or more chalcogens and one or more transition metals; and consolidating the nanoparticles under elevated pressure and temperature, wherein the nanoparticles are heated and cooled at a controlled rate.

Thermoelectric Energy Conversion: Materials, Devices, and Systems

International Nuclear Information System (INIS)

Chen, Gang

2015-01-01

This paper will present a discussion of challenges, progresses, and opportunities in thermoelectric energy conversion technology. We will start with an introduction to thermoelectric technology, followed by discussing advances in thermoelectric materials, devices, and systems. Thermoelectric energy conversion exploits the Seebeck effect to convert thermal energy into electricity, or the Peltier effect for heat pumping applications. Thermoelectric devices are scalable, capable of generating power from nano Watts to mega Watts. One key issue is to improve materials thermoelectric figure- of-merit that is linearly proportional to the Seebeck coefficient, the square of the electrical conductivity, and inversely proportional to the thermal conductivity. Improving the figure-of-merit requires good understanding of electron and phonon transport as their properties are often contradictory in trends. Over the past decade, excellent progresses have been made in the understanding of electron and phonon transport in thermoelectric materials, and in improving existing and identify new materials, especially by exploring nanoscale size effects. Taking materials to real world applications, however, faces more challenges in terms of materials stability, device fabrication, thermal management and system design. Progresses and lessons learnt from our effort in fabricating thermoelectric devices will be discussed. We have demonstrated device thermal-to-electrical energy conversion efficiency ∼10% and solar-thermoelectric generator efficiency at 4.6% without optical concentration of sunlight (Figure 1) and ∼8-9% efficiency with optical concentration. Great opportunities exist in advancing materials as well as in using existing materials for energy efficiency improvements and renewable energy utilization, as well as mobile applications. (paper)

Research for Brazing Materials of High-Temperature Thermoelectric Modules with CoSb3 Thermoelectric Materials

Science.gov (United States)

Lee, Yu Seong; Kim, Suk Jun; Kim, Byeong Geun; Lee, Soonil; Seo, Won-Seon; Kim, Il-Ho; Choi, Soon-Mok

2017-05-01

Metallic glass (MG) can be a candidate for an alternative brazing material of high-temperature thermoelectric modules, since we can expect both a lower brazing temperature and a high operating temperature for the junction from the MG brazers. Another advantage of MG powders is their outstanding oxidation resistance, namely, high-temperature durability in atmosphere. We fabricated three compositions of Al-based MGs—Al-Y-Ni, Al-Y-Ni-Co, and Al-Y-Ni-Co-La—by using the melt spinning process, and their T gs were 273°C, 264°C, and 249°C, respectively. The electrical resistivity of the Al-Y-Ni MG ribbon dropped significantly after annealing at 300°C. The electrical resistivity of crystallized Al-Y-Ni reduced down to 0.03 mΩ cm, which is an order of magnitude lower than that of the amorphous one. After the MG ribbons were pulverized to sub-100 μm, the average particle size was about 400 μm.

Structural and fluorescence properties of Ni:MgO-SiO2 particles synthesized by flame spray pyrolysis

International Nuclear Information System (INIS)

Suzuki, Takenobu; Ohishi, Yasutake; Tani, Takao

2006-01-01

Structural and fluorescence properties of flame spray-synthesized Ni 1 mol%-doped MgO-SiO 2 nano-particles (MgO:SiO 2 = 100:0, 50:50, 25:75 and 0:100 in mol%) were investigated as a first step to prepare transparent materials containing Ni:MgO for optical gain media. Polyhedral aggregates of primary particles with diameters of 8-19 nm were obtained for all compositions. The 100MgO particles were single crystalline and showed the fluorescences (centered at 1260 and 1320 nm) and lifetime (3.8 ms) similar to those of solid state-synthesized Ni:MgO polycrystalline powder under laser excitation at 976 nm, suggesting Ni ions incorporated in MgO

Thermoelectric characterization of Sb{sub 2}Te{sub 3} thin films deposited by ALD

Energy Technology Data Exchange (ETDEWEB)

Zastrow, Sebastian; Schumacher, Christian; Nielsch, Kornelius [University of Hamburg (Germany); Regus, Matthias [University of Kiel (Germany); Schulz, Stephan [University of Duisburg-Essen (Germany)

2012-07-01

Thermoelectric materials can be used as temperature sensors or peltier cooling devices as well as to recover a part of the massive losses of energy due to the waste heat generated in fossil-fuel driven power plants and vehicles. Antimony Telluride (Sb{sub 2}Te{sub 3}) is a p-doped semiconductor and in the focus of interest for room temperature applications because of its thermoelectric peak performance at around 350 K. However, thermoelectric properties of Sb{sub 2}Te{sub 3} ALD thin films have not been reported yet. Based on the work of Pore et al., Sb{sub 2}Te{sub 3} is deposited with a home-made reactor on SiO{sub 2} by using (Et{sub 3}Si){sub 2}Te and SbCl{sub 3}. The surface roughness as well as the growth rate depend strongly on the deposition temperature as reported by Cu et al. To check the preferential growth directions and the composition, XRD and EDX measurements are carried out. The thermoelectric properties are influenced by the deposition parameters. Therefore, spatial scans of the Seebeck coefficient are performed and the electrical resistivity is measured. In order to enhance the thermoelectric performance, a first optimization by short annealing processes is done under helium atmosphere up to 570 K. The authors would like to thank the ''Karl-Vossloh-Stiftung''.

Photoluminescence of the Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 ceramic system containing Fe3+ and Cr3+ as impurity ions

Science.gov (United States)

Sosman, L. P.; López, A.; Pedro, S. S.; Papa, A. R. R.

2018-02-01

This work presents the results of photoluminescence, excitation and radiative decay time for a ceramic system containing Mg2Al4Si5O18-Al2O3-MgAl2O4-SiO2 with Fe3+ and Cr3+ as impurity ions. Emission data were obtained using several excitation wavelengths and the excitation data were acquired for the most intense emission bands. The optical results were analyzed according to the Tanabe-Sugano (TS) theory from which the crystalline field parameter Dq and Racah parameters B and C were obtained for the Fe3+ and Cr3+ sites. The results indicate that the Fe3+ and Cr3+ ions occupy tetrahedral and octahedral sites, respectively. The emission from Fe3+ and Cr3+ ions causes an intense and broad band ranging between 350 nm and 850 nm, showing that this material is a potential tunable radiation source at room temperature.

Recent Progress on PEDOT-Based Thermoelectric Materials.

Science.gov (United States)

Wei, Qingshuo; Mukaida, Masakazu; Kirihara, Kazuhiro; Naitoh, Yasuhisa; Ishida, Takao

2015-02-16

The thermoelectric properties of poly(3,4-ethylenedioxythiophene) (PEDOT)-based materials have attracted attention recently because of their remarkable electrical conductivity, power factor, and figure of merit. In this review, we summarize recent efforts toward improving the thermoelectric properties of PEDOT-based materials. We also discuss thermoelectric measurement techniques and several unsolved problems with the PEDOT system such as the effect of water absorption from the air and the anisotropic thermoelectric properties. In the last part, we describe our work on improving the power output of thermoelectric modules by using PEDOT, and we outline the potential applications of polymer thermoelectric generators.

Quantum confinement effects on the thermoelectric figure of merit in Si/Si{sub 1{minus}x}Ge{sub x} system

Energy Technology Data Exchange (ETDEWEB)

Sun, X; Dresselhaus, M S; Wang, K L; Tanner, M O

1997-07-01

The Si/Si{sub 1{minus}x}Ge{sub x} quantum well system is attractive for high temperature thermoelectric applications and for demonstration of proof-of-principle for enhanced thermoelectric figure of merit Z, since the interfaces and carrier densities can be well controlled in this system. The authors report here theoretical calculations for Z in this system, and results from theoretical modeling of quantum confinement effects in the presence of {delta}-doping within the barrier layers. The {delta}-doping layers are introduced by growing very thin layers of wide band gap materials within the barrier layers in order to increase the effective barrier height within the barriers and thereby reduce the barrier width necessary for the quantum confinement of carriers within the quantum well. The overall figure of merit is thereby enhanced due to the reduced barrier width and hence reduced thermal conductivity, {kappa}. The {delta}-doping should further reduce {kappa} in the barriers by introducing phonon scattering centers within the barrier region. The temperature dependence of Z for Si quantum wells is also discussed.

Bi2O2Se nanosheet: An excellent high-temperature n-type thermoelectric material

Science.gov (United States)

Yu, Jiabing; Sun, Qiang

2018-01-01

Motivated by the recent synthesis of an ultrathin film of layered Bi2O2Se [Wu et al., Nat. Nanotechnol. 12, 530 (2017); Wu et al., Nano Lett. 17, 3021 (2017)], we have systematically studied the thermoelectric properties of a Bi2O2Se nanosheet using first principles density functional theory combined with semiclassical Boltzmann transport theory. The calculated results indicate that the Bi2O2Se nanosheet exhibits a figure of merit (ZT) of 3.35 for optimal n-type doping at 800 K, which is much larger than the ZT value of 2.6 at 923 K in SnSe known as the most efficient thermoelectric material [Zhao et al., Nature 508, 373 (2014)]. Equally important, the high ZT in the n-type doped Bi2O2Se nanosheet highlights the efficiency of the reduced dimension on improving thermoelectric performance as compared with strain engineering by which the ZT of n-type doped bulk Bi2O2Se cannot be effectively enhanced.

New Materials for High Temperature Thermoelectric Power Generation

Energy Technology Data Exchange (ETDEWEB)

Kauzlarich, Susan [Univ. of California, Davis, CA (United States)

2016-02-03

The scope of this proposal was to develop two new high ZT materials with enhanced properties for the n- and p-leg of a thermoelectric device capable of operating at a maximum temperature of 1275 K and to demonstrate the efficiency in a working device. Nanostructured composites and new materials based on n– and p–type nanostructured Si_1-xGe_x (ZT1273K ~ 1) and the recently discovered p–type high temperature Zintl phase material, Yb₁₄MnSb₁₁ (ZT_1273K ~1) were developed and tested in a working device.

Improved flux pinning behaviour in bulk MgB2 achieved by nano-SiO2 addition

International Nuclear Information System (INIS)

Rui, X F; Zhao, Y; Xu, Y Y; Zhang, L; Sun, X F; Wang, Y Z; Zhang, H

2004-01-01

Bulk MgB 2 with SiO 2 nanoparticles added has been synthesized using a simple solid-state reaction route. The lattice constant in the c direction increases with additive content due to a small amount of Si being doped into the lattice of the MgB 2 ; however, T c is almost fixed at 37.2 K. The addition of SiO 2 nanoparticles also improves the J c -H and H irr -T characteristics of MgB 2 when the additive content is lower than 7%. At 20 K and 1 T, J c for the sample with 7% additive content reaches 2.5 x 10 5 A cm -2 . Microstructural analysis reveals that a high density of MgSi 2 nanoparticles (10-50 nm) exists inside the MgB 2 grains, leading to the formation of a nanocomposite superconductor

Electrical transport characterization of Al and Sn doped Mg 2 Si thin films

KAUST Repository

Zhang, Bo

2017-05-22

Thin-film Mg2Si was deposited using radio frequency (RF) magnetron sputtering. Al and Sn were incorporated as n-type dopants using co-sputtering to tune the thin-film electrical properties. X-ray diffraction (XRD) analysis confirmed that the deposited films are polycrystalline Mg2Si. The Sn and Al doping concentrations were measured using Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray spectroscopy (EDS). The charge carrier concentration and the charge carrier type of the Mg2Si films were measured using a Hall bar structure. Hall measurements show that as the doping concentration increases, the carrier concentration of the Al-doped films increases, whereas the carrier concentration of the Sn-doped films decreases. Combined with the resistivity measurements, the mobility of the Al-doped Mg2Si films is found to decrease with increasing doping concentration, whereas the mobility of the Sn-doped Mg2Si films is found to increase.

LOW-TEMPERATURE SINTERED (ZnMg2SiO4 MICROWAVE CERAMICS WITH TiO2 ADDITION AND CALCIUM BOROSILICATE GLASS

Directory of Open Access Journals (Sweden)

BO LI

2011-03-01

Full Text Available The low-temperature sintered (ZnMg2SiO–TiO2 microwave ceramic using CaO–B2O3–SiO2 (CBS as a sintering aid has been developed. Microwave properties of (Zn1-xMgx2SiO4 base materials via sol-gel method were highly dependent on the Mg-substituted content. Further, effects of CBS and TiO2 additives on the crystal phases, microstructures and microwave characteristics of (ZnMg2SiO4 (ZMS ceramics were investigated. The results indicated that CBS glass could lower the firing temperature of ZMS dielectrics effectively from 1170 to 950°C due to the liquid-phase effect, and significantly improve the sintering behavior and microwave properties of ZMS ceramics. Moreover, ZMS–TiO2 ceramics showed the biphasic structure and the abnormal grain growth was suppressed by the pinning effect of second phase TiO2. Proper amount of TiO2 could tune the large negative temperature coefficient of resonant frequency (tf of ZMS system to a near zero value. (Zn0.8Mg0.22SiO4 codoped with 10 wt.% TiO2 and 3 wt.% CBS sintered at 950°C exhibits the dense microstructure and excellent microwave properties: εr = 9.5, Q·f = 16 600 GHz and tf = −9.6 ppm/°C.

Technological Possibilities of Si:H Thin Film Deposition with Embedded Cubic Mg2Si Nanoparticles

Czech Academy of Sciences Publication Activity Database

Galkin, N.G.; Galkin, K.N.; Chernev, I.M.; Fajgar, Radek; Stuchlíková, The-Ha; Remeš, Zdeněk; Stuchlík, Jiří

2013-01-01

Roč. 10, č. 12 (2013), s. 1712-1716 ISSN 1862-6351. [Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-SILICIDE 2013) /3./. Tsukuba, Ibaraki, 27.07.2013-29.07.2013] R&D Projects: GA ČR GA13-25747S Grant - others:MŠMT(CZ) LH12236; RFB(RU) 13-02-00046 Program:LH Institutional support: RVO:67985858 ; RVO:68378271 Keywords : Mg2Si * nanoparticles * technology Subject RIV: CA - Inorganic Chemistry; BM - Solid Matter Physics ; Magnetism (FZU-D)

In-situ synchrotron x-ray study of MgB2 formation when doped by SiC

Science.gov (United States)

Abrahamsen, A. B.; Grivel, J.-C.; Andersen, N. H.; Herrmann, M.; Häßler, W.; Birajdar, B.; Eibl, O.; Saksl, K.

2008-02-01

We have studied the evolution of the reaction xMg + 2B + ySiC → zMg1-p(B1-qCq)2 + yMg2Si in samples of 1, 2, 5 and 10 wt% SiC doping. We found a coincident formation of MgB2 and Mg2Si, whereas the crystalline part of the SiC nano particles is not reacting at all. Evidence for incorporation of carbon into the MgB2 phase was established from the decrease of the a-axis lattice parameter upon increasing SiC doping. An estimate of the MgB2 lower limit grain size was found to decrease from L100 = 795 Å and L002 = 337 Å at 1 wt% SiC to L100 = 227 Å and L002= 60 Å at 10 wt% SiC. Thus superconductivity might be suppressed at 10 wt% SiC doping due to the grain size approaching the coherence length.

Synthesis and thermoelectric properties of rare earth Yb-doped Ba8−xYbxSi30Ga16 clathrates

International Nuclear Information System (INIS)

Liu, Lihua; Li, Feng; Wei, Yuping; Chen, Ning; Bi, Shanli; Qiu, Hongmei; Cao, Guohui; Li, Yang

2014-01-01

Highlights: • Samples with the chemical formula Ba8− x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared. • Some Yb atoms enter the clathrate lattice to replace Ba, while other Yb atoms are oxidized as Yb 2 O 3 . • The thermal conductivity decreases with Yb-doping. • Thermoelectric figure of merit ZT significantly increased. -- Abstract: The potential thermoelectric and magnetic application of clathrate materials with rare-earth doping is the focus of much of the recent research activity in the synthetic material physics and chemistry. A series of clathrate samples with the chemical formula Ba 8−x Yb x Si 30 Ga 16 (x = 0, 0.5, 0.7, 1 and 1.5) were prepared by combining arc melting, ball milling and spark plasma sintering (SPS) techniques. X-ray diffraction and scanning electronic microscopy combined with energy-dispersive X-ray spectroscopy (EDS) analysis showed the dominant phase to be the type-I clathrate. Whereas, X-ray structural refinement and EDS analysis indicated that some Yb atoms enter the clathrate lattice to replace Ba at 2a sites, while other Yb atoms are oxidized as Yb 2 O 3 precipitated around grain boundaries. The solid solubility of Yb into clathrate lattice yielded x ∼ 0.3. Comparative analysis between Yb-doped and Yb-free clathrates showed that the thermal conductivity decreases with Yb-doping. Consequently, thermoelectric figure of merit ZT significantly increased

Ion-irradiation-induced damage in nuclear materials: Case study of a-SiO2 and MgO

International Nuclear Information System (INIS)

Bachiller-Perea, Diana

2016-01-01

One of the most important challenges in Physics today is the development of a clean, sustainable, and efficient energy source that can satisfy the needs of the actual and future society producing the minimum impact on the environment. For this purpose, a huge international research effort is being devoted to the study of new systems of energy production; in particular, Generation IV fission reactors and nuclear fusion reactors are being developed. The materials used in these reactors will be subjected to high levels of radiation, making necessary the study of their behavior under irradiation to achieve a successful development of these new technologies. In this thesis two materials have been studied: amorphous silica (a-SiO 2 ) and magnesium oxide (MgO). Both materials are insulating oxides with applications in the nuclear energy industry. High-energy ion irradiations have been carried out at different accelerator facilities to induce the irradiation damage in these two materials; then, the mechanisms of damage have been characterized using principally Ion Beam Analysis (IBA) techniques. One of the challenges of this thesis was to develop the Ion Beam Induced Luminescence or iono-luminescence (which is not a widely known IBA technique) and to apply it to the study of the mechanisms of irradiation damage in materials, proving the power of this technique. For this purpose, the iono-luminescence of three different types of silica (containing different amounts of OH groups) has been studied in detail and used to describe the creation and evolution of point defects under irradiation. In the case of MgO, the damage produced under 1.2 MeV Au + irradiation has been characterized using Rutherford backscattering spectrometry in channeling configuration and X-ray diffraction. Finally, the iono-luminescence of MgO under different irradiation conditions has also been studied.The results obtained in this thesis help to understand the irradiation-damage processes in materials

Effect of Bi modification treatment on microstructure, tensile properties, and fracture behavior of cast Al-Mg2Si metal matrix composite

Directory of Open Access Journals (Sweden)

Wu Xiaofeng

2013-01-01

Full Text Available Bi has a good modification effect on the hypoeutectic Al-Si alloy, and the morphology of eutectic Si changes from coarse acicular to fine fibrous. Based on the similarity between Mg2Si and Si phases in crystalline structure and crystallization process, the present study investigated the effects of different concentrations of Bi on the microstructure, tensile properties, and fracture behavior of cast Al-15wt.%Mg2Si in-situ metal matrix composite. The results show that the addition of the proper amount of Bi has a significant modification effect on both primary and eutectic Mg2Si in the Al-15wt.%Mg2Si composite. With an increase in Bi content from 0 to 1wt.%, the morphology of the primary Mg2Si is changed from irregular or dendritic to polyhedral shape; and its average particle size is significantly decreased from 70 to 6 μm. Moreover, the morphology of the eutectic Mg2Si phase is altered from flake-like to very short fibrous or dot-like. When the Bi addition exceeds 4.0wt.%, the primary Mg2Si becomes coarse again. However, the eutectic Mg2Si still exhibits the modified morphology. Tensile tests reveal that the Bi addition can improve the tensile strength and ductility of the material. Compared with those of the unmodified composite, the ultimate tensile strength and percentage elongation after fracture with 1.0wt.% Bi increase 51.2% and 100%, respectively. At the same time, the Bi addition changes the fracture behavior from brittle to ductile.

Carbon-Nanotube-Based Thermoelectric Materials and Devices

Energy Technology Data Exchange (ETDEWEB)

Blackburn, Jeffrey L. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Ferguson, Andrew J. [Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden CO 80401-3305 USA; Cho, Chungyeon [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA; Grunlan, Jaime C. [Department of Mechanical Engineering, Texas A& M University, College Station TX 77843-3003 USA

2018-01-22

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g-1) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting.

Effect of Mach number on thermoelectric performance of SiC ceramics nose-tip for supersonic vehicles

International Nuclear Information System (INIS)

Han, Xiao-Yi; Wang, Jun

2014-01-01

This paper focus on the effects of Mach number on thermoelectric energy conversion for the limitation of aero-heating and the feasibility of energy harvesting on supersonic vehicles. A model of nose-tip structure constructed with SiC ceramics is developed to numerically study the thermoelectric performance in a supersonic flow field by employing the computational fluid dynamics and the thermal conduction theory. Results are given in the cases of different Mach numbers. Moreover, the thermoelectric performance in each case is predicted with and without Thomson heat, respectively. Due to the increase of Mach number, both the temperature difference and the conductive heat flux between the hot side and the cold side of nose tip are increased. This results in the growth of the thermoelectric power generated and the energy conversion efficiency. With respect to the Thomson effect, over 50% of total power generated converts to Thomson heat, which greatly reduces the thermoelectric power and efficiency. However, whether the Thomson effect is considered or not, with the Mach number increasing from 2.5 to 4.5, the thermoelectric performance can be effectively improved. -- Highlights: • Thermoelectric SiC nose-tip structure for aerodynamic heat harvesting of high-speed vehicles is studied. • Thermoelectric performance is predicted based on numerical methods and experimental thermoelectric parameters. • The effects of Mach number on thermoelectric performance are studied in the present paper. • Results with respect to the Thomson effect are also explored. • Output power and energy efficiency of the thermoelectric nose-tip are increased with the increase of Mach number

Effect of Ni on eutectic structural evolution in hypereutectic Al-Mg2Si cast alloys

International Nuclear Information System (INIS)

Li Chong; Wu Yaping; Li Hui; Wu Yuying; Liu Xiangfa

2010-01-01

Research highlights: → By the injection of rod-like NiAl 3 phase in Al-Mg 2 Si alloys, Al-Mg 2 Si binary eutectic structure gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic. → The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. → The mechanism of structural evolution was analyzed in terms of the detailed microstructural observations. → The high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structural evolution. - Abstract: The aim of this work is to investigate the eutectic structural evolution of hypereutectic Al-20% Mg 2 Si with Ni addition under a gravity casting process. Three-dimensional morphologies of eutectic phases were observed in detail using field emission scanning electron microscopy, after Al matrix was removed by deep etching or extraction. The results show that Al-Mg 2 Si binary eutectic gradually evolves into Al-Mg 2 Si-NiAl 3 ternary eutectic with the increase of Ni content, and flake-like eutectic Mg 2 Si transforms into rods. The ternary eutectic presents a unique double rod structure that rod-like NiAl 3 and Mg 2 Si uniformly distribute in Al matrix. Further, the high temperature (350 deg. C) tensile strength of the alloy increases by 23% due to the eutectic structure evolution, and the mechanism of structural evolution was discussed and analyzed in terms of the detailed microstructural observations.

From phase-change materials to thermoelectrics?

Energy Technology Data Exchange (ETDEWEB)

Schneider, Matthias N.; Rosenthal, Tobias; Oeckler, Oliver [Dept. of Chemistry, Ludwig Maximilian Univ. Munich (Germany); Stiewe, Christian [German Aerospace Center, Cologne (Germany)

2010-07-01

Metastable tellurides play an important role as phase-change materials in data storage media and non-volatile RAM devices. The corresponding crystalline phases with very simple basic structures are not stable as bulk materials at ambient conditions, however, for a broad range of compositions they represent stable high-temperature phases. In the system Ge/Sb/Te, rocksalt-type high-temperature phases are characterized by a large number of vacancies randomly distributed over the cation position, which order as 2D vacancy layers upon cooling. Short-range order in quenched samples produces pronounced nanostructures by the formation of twin domains and finite intersecting vacancy layers. As phase-change materials are usually semimetals or small-bandgap semiconductors and efficient data storage requires low thermal conductivity, bulk materials with similar compositions and properties can be expected to exhibit promising thermoelectric characteristics. Nanostructuring by phase transitions that involve partial vacancy ordering may enhance the efficiency of such thermoelectrics. We have shown that germanium antimony tellurides with compositions close to those used as phase-change materials in rewritable Blu-Ray Discs, e.g. (GeTe){sub 12}Sb{sub 2}Te{sub 3}, exhibit thermoelectric figures of merit of up to ZT = 1.3 at 450 C if a nanodomain structure is induced by rapidly quenching the cubic high-temperature phase. Structural changes have been elucidated by X-ray diffraction and high-resolution electron microscopy. (orig.)

Efficient technique for computational design of thermoelectric materials

Science.gov (United States)

Núñez-Valdez, Maribel; Allahyari, Zahed; Fan, Tao; Oganov, Artem R.

2018-01-01

Efficient thermoelectric materials are highly desirable, and the quest for finding them has intensified as they could be promising alternatives to fossil energy sources. Here we present a general first-principles approach to predict, in multicomponent systems, efficient thermoelectric compounds. The method combines a robust evolutionary algorithm, a Pareto multiobjective optimization, density functional theory and a Boltzmann semi-classical calculation of thermoelectric efficiency. To test the performance and reliability of our overall framework, we use the well-known system Bi2Te3-Sb2Te3.

Carbon-Nanotube-Based Thermoelectric Materials and Devices.

Science.gov (United States)

Blackburn, Jeffrey L; Ferguson, Andrew J; Cho, Chungyeon; Grunlan, Jaime C

2018-03-01

Conversion of waste heat to voltage has the potential to significantly reduce the carbon footprint of a number of critical energy sectors, such as the transportation and electricity-generation sectors, and manufacturing processes. Thermal energy is also an abundant low-flux source that can be harnessed to power portable/wearable electronic devices and critical components in remote off-grid locations. As such, a number of different inorganic and organic materials are being explored for their potential in thermoelectric-energy-harvesting devices. Carbon-based thermoelectric materials are particularly attractive due to their use of nontoxic, abundant source-materials, their amenability to high-throughput solution-phase fabrication routes, and the high specific energy (i.e., W g -1 ) enabled by their low mass. Single-walled carbon nanotubes (SWCNTs) represent a unique 1D carbon allotrope with structural, electrical, and thermal properties that enable efficient thermoelectric-energy conversion. Here, the progress made toward understanding the fundamental thermoelectric properties of SWCNTs, nanotube-based composites, and thermoelectric devices prepared from these materials is reviewed in detail. This progress illuminates the tremendous potential that carbon-nanotube-based materials and composites have for producing high-performance next-generation devices for thermoelectric-energy harvesting. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thermoelectricity: materials and applications

International Nuclear Information System (INIS)

Elberg, S.; Mathonnet, P.

1975-01-01

After a brief recall of the basic principles of thermoelectricity, the essential characteristics intervening in the different thermoelectric devices operating modes are defined. Properties of the materials the most used nowadays and performances of the apparatus that they allow to realize are indicated. Advantages and drawbacks of the principal applications in the form of electrical generators, refrigerators and heat pumps are pointed out [fr

Superconductivity, critical current density, and flux pinning in MgB2-x(SiC)x/2 superconductor after SiC nanoparticle doping

Science.gov (United States)

Dou, S. X.; Pan, A. V.; Zhou, S.; Ionescu, M.; Wang, X. L.; Horvat, J.; Liu, H. K.; Munroe, P. R.

2003-08-01

We investigated the effect of SiC nanoparticle doping on the crystal lattice structure, critical temperature Tc, critical current density Jc, and flux pinning in MgB2 superconductor. A series of MgB2-x(SiC)x/2 samples with x=0-1.0 were fabricated using an in situ reaction process. The contraction of the lattice and depression of Tc with increasing SiC doping level remained rather small most likely due to the counterbalancing effect of Si and C co-doping. The high level Si and C co-doping allowed the creation of intragrain defects and highly dispersed nanoinclusions within the grains which can act as effective pinning centers for vortices, improving Jc behavior as a function of the applied magnetic field. The enhanced pinning is mainly attributable to the substitution-induced defects and local structure fluctuations within grains. A pinning mechanism is proposed to account for different contributions of different defects in MgB2-x(SiC)x/2 superconductors.

Effective thermal conductivity in thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Baranowski, LL; Snyder, GJ; Toberer, ES

2013-05-28

Thermoelectric generators (TEGs) are solid state heat engines that generate electricity from a temperature gradient. Optimizing these devices for maximum power production can be difficult due to the many heat transport mechanisms occurring simultaneously within the TEG. In this paper, we develop a model for heat transport in thermoelectric materials in which an "effective thermal conductivity" (kappa(eff)) encompasses both the one dimensional steady-state Fourier conduction and the heat generation/consumption due to secondary thermoelectric effects. This model is especially powerful in that the value of kappa(eff) does not depend upon the operating conditions of the TEG but rather on the transport properties of the TE materials themselves. We analyze a variety of thermoelectric materials and generator designs using this concept and demonstrate that kappa(eff) predicts the heat fluxes within these devices to 5% of the exact value. (C) 2013 AIP Publishing LLC.

Development in Zn4Sb-based thermoelectric materials

DEFF Research Database (Denmark)

Yin, Hao

or thermopower,  the electrical conductivity, the thermal conductivity and T the absolute temperature. The best thermoelectrics are heavily doped semiconductors with high thermoelectric power factors and low thermal conductivities, known as “Phonon Glasses Electrical Crystals”. Zn4Sb3 is one such material......-section. The following part reports the effect of nano-particles on the thermoelectric properties and thermal stability of Zn4Sb3. Though TiO2 nano particles have remarkably enhanced the stability, the thermoelectric performance of all the nano-composites deteriorates. Optimization of the content of the nano...

Super-adiabatic combustion in Al2O3 and SiC coated porous media for thermoelectric power conversion

International Nuclear Information System (INIS)

Mueller, Kyle T.; Waters, Oliver; Bubnovich, Valeri; Orlovskaya, Nina; Chen, Ruey-Hung

2013-01-01

The combustion of ultra-lean fuel/air mixtures provides an efficient way to convert the chemical energy of hydrocarbons and low-calorific fuels into useful power. Matrix-stabilized porous medium combustion is an advanced technique in which a solid porous medium within the combustion chamber conducts heat from the hot gaseous products in the upstream direction to preheat incoming reactants. This heat recirculation extends the standard flammability limits, allowing the burning of ultra-lean and low-calorific fuel mixtures and resulting a combustion temperature higher than the thermodynamic equilibrium temperature of the mixture (i.e., super-adiabatic combustion). The heat generated by this combustion process can be converted into electricity with thermoelectric generators, which is the goal of this study. The design of a porous media burner coupled with a thermoelectric generator and its testing are presented. The combustion zone media was a highly-porous alumina matrix interposed between upstream and downstream honeycomb structures with pore sizes smaller than the flame quenching distance, preventing the flame from propagating outside of the central section. Experimental results include temperature distributions inside the combustion chamber and across a thermoelectric generator; along with associated current, voltage and power output values. Measurements were obtained for a catalytically inert Al 2 O 3 medium and a SiC coated medium, which was tested for the ability to catalyze the super-adiabatic combustion. The combustion efficiency was obtained for stoichiometric and ultra-lean (near the lean flammability limit) mixtures of CH 4 and air. - Highlights: • Design of a porous burner coupled with a thermoelectric module. • Super-adiabatic combustion in a highly-porous ceramic matrix was investigated. • Both alumina and silicon carbide ceramic surfaces were used as porous media. • Catalytic properties of Al 2 O 3 and SiC ceramic surfaces were studied

Mg{sub 2}Sn heterostructures on Si(111) substrate

Energy Technology Data Exchange (ETDEWEB)

Dózsa, L., E-mail: dozsa@mfa.kfki.hu [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Galkin, N.G. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation); Pécz, B.; Osváth, Z.; Zolnai, Zs. [Institute of Technical Physics and Materials Science, Centre for Energy Research, Hungarian Academy of Sciences, 1525 Budapest Pf, 49 (Hungary); Németh, A. [Wigner Research Centre for Physics, Institute for Particle and Nuclear Physics, 1525 Budapest, P.O.B. 49 (Hungary); Galkin, K.N.; Chernev, I.M. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Dotsenko, S.A. [Institute of Automation and Control Processes of FEB RAS, 5 Radio St., Vladivostok 690041 (Russian Federation); Far Eastern Federal University, 8 Sukhanova St., Vladivostok 690950 (Russian Federation)

2017-05-31

Highlights: • Investigations show that the nanostructures have significant changes during the applied regular experimental investigations. • It is especially true for transmittance electron microscopy, where the investigated layers have to be thinned near to the nanostructure size. • The time order of the applied experimental investigation has a dominant effect on the experimetal results. - Abstract: Thin un-doped and Al doped polycrystalline Mg-stannide films consisting mainly of Mg{sub 2}Sn semiconductor phase have been grown by deposition of Sn-Mg multilayers on Si(111) p-type wafers at room temperature and annealing at 150 °C. Rutherford backscattering measurement spectroscopy (RBS) were used to determine the amount of Mg and Sn in the structures. Raman spectroscopy has shown the layers contain Mg{sub 2}Sn phase. Cross sectional transmission electron microscopy (XTEM) measurements have identified Mg{sub 2}Sn nanocrystallites in hexagonal and cubic phases without epitaxial orientation with respect to the Si(111) substrate. Significant oxygen concentration was found in the layer both by RBS and TEM. The electrical measurements have shown laterally homogeneous conductivity in the grown layer. The undoped Mg{sub 2}Sn layers show increasing resistivity with increasing temperature indicating the scattering process dominates the resistance of the layers, i.e. large concentration of point defects was generated in the layer during the growth process. The Al doped layer shows increase of the resistance at low temperature caused by freeze out of free carriers in the Al doped Mg{sub 2}Sn layer. The measurements indicate the necessity of protective layer grown over the Mg{sub 2}Sn layers, and a short time delay between sample preparation and cross sectionalTEM analysis, since the unprotected layer is degraded by the interaction with the ambient.

Tribological Behavior of Aluminum Alloy AlSi10Mg-TiB2 Composites Produced by Direct Metal Laser Sintering (DMLS)

Science.gov (United States)

Lorusso, Massimo; Aversa, Alberta; Manfredi, Diego; Calignano, Flaviana; Ambrosio, Elisa Paola; Ugues, Daniele; Pavese, Matteo

2016-08-01

Direct metal laser sintering (DMLS) is an additive manufacturing technique for the production of parts with complex geometry and it is especially appropriate for structural applications in aircraft and automotive industries. Aluminum-based metal matrix composites (MMCs) are promising materials for these applications because they are lightweight, ductile, and have a good strength-to-weight ratio This paper presents an investigation of microstructure, hardness, and tribological properties of AlSi10Mg alloy and AlSi10Mg alloy/TiB2 composites prepared by DMLS. MMCs were realized with two different compositions: 10% wt. of microsize TiB2, 1% wt. of nanosize TiB2. Wear tests were performed using a pin-on-disk apparatus on the prepared samples. Performances of AlSi10Mg samples manufactured by DMLS were also compared with the results obtained on AlSi10Mg alloy samples made by casting. It was found that the composites displayed a lower coefficient of friction (COF), but in the case of microsize TiB2 reinforcement the wear rate was higher than with nanosize reinforcements and aluminum alloy without reinforcement. AlSi10Mg obtained by DMLS showed a higher COF than AlSi10Mg obtained by casting, but the wear rate was higher in the latter case.

PROPERTIES OF Eu3+ LUMINESCENCE IN THE MONOCLINIC Ba2MgSi2O7

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Shansh an Yao

2011-09-01

Full Text Available Red-emitting phosphors Ba2-xMgSi2O7: Eux3+ was prepared by combustion-assisted synthesis method and an efficient red emission under near-ultraviolet (UV was observed. The luminescence and crystallinity were investigated using luminescence spectrometry and X-ray diffractometer. The emission spectrum shows that the most intense peak is located at 614 nm, which corresponds to the 5D0 → 7F2 transitions of Eu3+. The phosphor has two main excitation peaks located at 394 and 465 nm, which match the emission of UV and blue light-emitting diodes, respectively. The effect of Eu3+ concentration on the emission spectrum of Ba2MgSi2O7:Eu3+ phosphor was studied. The results showed that the emission intensity increased with increasing Eu3+ concentration, and then decreased because of concentration quenching. The critical quenching concentration of Eu3+ in Ba2MgSi2O7: Eu3+ phosphor is about 0.05 mol. The mechanism of concentration quenching of Ba2MgSi2O7: Eu3+ luminescence is energy transfer between Eu3+ ions casued by the dipole-dipole interaction.

Development of Perovskite-Type Materials for Thermoelectric Application

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Tingjun Wu

2018-06-01

Full Text Available Oxide perovskite materials have a long history of being investigated for thermoelectric applications. Compared to the state-of-the-art tin and lead chalcogenides, these perovskite compounds have advantages of low toxicity, eco-friendliness, and high elemental abundance. However, because of low electrical conductivity and high thermal conductivity, the total thermoelectric performance of oxide perovskites is relatively poor. Variety of methods were used to enhance the TE properties of oxide perovskite materials, such as doping, inducing oxygen vacancy, embedding crystal imperfection, and so on. Recently, hybrid perovskite materials started to draw attention for thermoelectric application. Due to the low thermal conductivity and high Seebeck coefficient feature of hybrid perovskites materials, they can be promising thermoelectric materials and hold the potential for the application of wearable energy generators and cooling devices. This mini-review will build a bridge between oxide perovskites and burgeoning hybrid halide perovskites in the research of thermoelectric properties with an aim to further enhance the relevant performance of perovskite-type materials.

On the way to enhance the optical absorption of a-Si in NIR by embedding Mg_2Si thin film

International Nuclear Information System (INIS)

Chernev, I. M.; Shevlyagin, A. V.; Galkin, K. N.; Stuchlik, J.; Remes, Z.; Fajgar, R.; Galkin, N. G.

2016-01-01

Mg_2Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg_2Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg_2Si.

Mechanical properties of BixSb2−xTe3 nanostructured thermoelectric material

International Nuclear Information System (INIS)

Li, G; Gadelrab, K R; Souier, T; Chiesa, M; Potapov, P L; Chen, G

2012-01-01

Research on thermoelectric (TE) materials has been focused on their transport properties in order to maximize their overall performance. Mechanical properties, which are crucial for system reliability, are often overlooked. The recent development of a new class of high-performance, low-dimension thermoelectric materials calls for a better understanding of their mechanical behavior to achieve the desired system reliability. In the present study we investigate the mechanical behavior of nanostructure bulk TE material p-type Bi x Sb 2−x Te 3 by means of nanoindentation and 3D finite element analysis. The Young’s modulus of the material was estimated by the Oliver–Pharr (OP) method and by means of numerically assisted nanoindentation analysis yielding comparable values about 40 GPa. Enhanced hardness and yield strength can be predicted for this nanostructured material. Microstructure is studied and correlation with mechanical properties is discussed. (paper)

A review of thermoelectric cooling: Materials, modeling and applications

International Nuclear Information System (INIS)

Zhao, Dongliang; Tan, Gang

2014-01-01

This study reviews the recent advances of thermoelectric materials, modeling approaches, and applications. Thermoelectric cooling systems have advantages over conventional cooling devices, including compact in size, light in weight, high reliability, no mechanical moving parts, no working fluid, being powered by direct current, and easily switching between cooling and heating modes. In this study, historical development of thermoelectric cooling has been briefly introduced first. Next, the development of thermoelectric materials has been given and the achievements in past decade have been summarized. To improve thermoelectric cooling system's performance, the modeling techniques have been described for both the thermoelement modeling and thermoelectric cooler (TEC) modeling including standard simplified energy equilibrium model, one-dimensional and three-dimensional models, and numerical compact model. Finally, the thermoelectric cooling applications have been reviewed in aspects of domestic refrigeration, electronic cooling, scientific application, and automobile air conditioning and seat temperature control, with summaries for the commercially available thermoelectric modules and thermoelectric refrigerators. It is expected that this study will be beneficial to thermoelectric cooling system design, simulation, and analysis. - Highlights: •Thermoelectric cooling has great prospects with thermoelectric material's advances. •Modeling techniques for both thermoelement and TEC have been reviewed. •Principle thermoelectric cooling applications have been reviewed and summarized

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

Science.gov (United States)

Parker, David; Singh, David J

2013-01-01

We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature. PMID:27877610

Alkaline earth lead and tin compounds Ae2Pb, Ae2Sn, Ae = Ca, Sr, Ba, as thermoelectric materials

Directory of Open Access Journals (Sweden)

David Parker and David J Singh

2013-01-01

Full Text Available We present a detailed theoretical study of three alkaline earth compounds Ca2Pb, Sr2Pb and Ba2Pb, which have undergone little previous study, calculating electronic band structures and Boltzmann transport and bulk moduli using density functional theory. We also study the corresponding tin compounds Ca2Sn, Sr2Sn and Ba2Sn. We find that these are all narrow band gap semiconductors with an electronic structure favorable for thermoelectric performance, with substantial thermopowers for the lead compounds at temperature ranges from 300 to 800 K. For the lead compounds, we further find very low calculated bulk moduli—roughly half of the values for the lead chalcogenides, suggestive of soft phonons and hence low lattice thermal conductivity. All these facts indicate that these materials merit experimental investigation as potential high performance thermoelectrics. We find good potential for thermoelectric performance in the environmentally friendly stannide materials, particularly at high temperature.

Material parameters for thermoelectric performance

Indian Academy of Sciences (India)

The thermoelectric performance of a thermoelement is ideally defined in terms of the so-called figure-of-merit = 2 / , where , and refer respectively to the Seebeck coefficient, electrical conductivity and thermal conductivity of the thermoelement material. However, there are other parameters which are fairly good ...

Isovalent substitutes play in different ways: Effects of isovalent substitution on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02}

Energy Technology Data Exchange (ETDEWEB)

Sun, Hui, E-mail: huisun3@iflytek.com [Department of Basic Teaching, Anhui Institute of Information Technology, Wuhu, Anhui 241000 (China); Lu, Xu [College of Physics, Chongqing University, Chongqing 401331 (China); Morelli, Donald T. [Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, Michigan 48824 (United States)

2016-07-21

Boron-added CoSi, CoSi{sub 0.98}B{sub 0.02}, possesses a very high thermoelectric power factor of 60 μW cm{sup −1} K{sup −2} at room temperature, which is among the highest power factors that have ever been reported for near-room-temperature thermoelectric applications. Since the electrical properties of this material have been tuned properly, isovalent substitution for its host atoms is intentionally employed to reduce the lattice thermal conductivity while maintaining the electronic properties unchanged. In our previous work, the effect of Rh substitution for Co atoms on the thermoelectric properties of CoSi{sub 0.98}B{sub 0.02} has been studied. Here, we present a study of the substitution of Ge for Si atoms in this compound. Even though Ge and Rh are isovalent with their corresponding host atoms, they play different roles in determining the electrical and thermal transport properties. Through the evaluation of the lattice thermal conductivity by the Debye approximation and the comparison between the high-temperature Seebeck coefficients, we propose that Rh substitution leads to a further overlapping of the conduction and the valence bands, while Ge substitution only shifts the Fermi level upward into the conduction band. Our results show that the influence of isovalent substitution on the electronic structure cannot be ignored when the alloying method is used to improve thermoelectric properties.

Intergranular phase of the Si3 N4 hot pressed with Mg O/Y2 O3

International Nuclear Information System (INIS)

Costa, Celio A.; Todd, Judith A.

1997-01-01

Monolithic and composite Si 3 N 4 hot-pressed with 3% Mgo or 6% Y 2 O 3 were analyzed with X-ray diffraction and transmission electron microscopy. The results showed materials to be composed of β-Si 3 N 4 grains and an intergranular phase which was partially crystalline and partially amorphous. For the materials sintered with Mg O, the identification of the intergranular phase was not conclusive. For the materials sintered with Y 2 O 3 . It was observed that the amount of intergranular crystalline phase decreased as whiskers were added to the material and the intergranular crystalline part had a crystallographic structure similar to yttrium-silicon-oxide-nitride family. (author)

Measurement and characterization techniques for thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Tritt, T M

1997-07-01

Characterization of thermoelectric materials can pose many problems. A temperature difference can be established across these materials as an electrical current is passed due to the Peltier effect. The thermopower of these materials is quite large and thus large thermal voltages can contribute to many of the measurements necessary to investigate these materials. This paper will discuss the chracterization techniques necessary to investigate these materials and provide an overview of some of the potential systematic errors which can arise. It will also discuss some of the corrections one needs to consider. This should provide an introduction to the characterization and measurement of thermoelectric materials and provide references for a more in depth discussion of the concepts. It should also serve as an indication of the care that must be taken while working with thermoelectric materials.

Portable Thermoelectric Power Generator Coupled with Phase Change Material

Directory of Open Access Journals (Sweden)

Lim Chong C.

2014-07-01

Full Text Available Solar is the intermittent source of renewable energy and all thermal solar systems having a setback on non-functioning during the night and cloudy environment. This paper presents alternative solution for power generation using thermoelectric which is the direct conversion of temperature gradient of hot side and cold side of thermoelectric material to electric voltage. Phase change material with latent heat effect would help to prolong the temperature gradient across thermoelectric material for power generation. Besides, the concept of portability will enable different power source like solar, wasted heat from air conditioner, refrigerator, stove etc, i.e. to create temperature different on thermoelectric material for power generation. Furthermore, thermoelectric will generate direct current which is used by all the gadgets like Smartphone, tablet, laptop etc. The portable concept of renewable energy will encourage the direct usage of renewable energy for portable gadgets. The working principle and design of portable thermoelectric power generator coupled with phase change material is presented in this paper.

On one possibility for application of new thermoelectric materials based on Ag2Te

International Nuclear Information System (INIS)

Vassilev, Venceslav; Parvanov, Svetlin; Vachkov, Valeri

2011-01-01

The thermoelectric characteristics of Ag 2 Te and Ag 1,84 Cd 0,08 Te (solid solution based on Ag 2 Te) are investigated and analyzed. The main thermoelectric characteristics of the solid solution: α=118 μV/K; σ = 2230 S/cm and = 2,45.10 -2 W/(cm.K) ensure coefficient of thermoelectric efficiency z = 1,27. 10-3 K -1 (at 300 ), which increases this of the Ag 2 Te. A composition for commutation material is developed, which connects the N- and the P-branches of a single thermo element (52 wt. % In + 48 wt. % Sn) with melting temperature of 390 K. The possibility for application of the Ag 1,84 Cd 0,08 Te solid solution as N-branch of a thermo element in combination with the solid solution Bi 0,5 Sb 1,5 Te 3 (P-branch) is investigated. The thermo element guarantees values of z from 0,71.10 -3 to 1,27.10 -3 K -1 in the temperature interval 250 - 350 . The maximum z value is registered at 300 K (z = 1,27.10 -3 K -1 ). Keywords: Silver telluride, Solid solutions, Thermoelectric properties, Thermo element

Atomistic simulations of thermal transport in Si and SiGe based materials: From bulk to nanostructures

Science.gov (United States)

Savic, Ivana; Mingo, Natalio; Donadio, Davide; Galli, Giulia

2010-03-01

It has been recently proposed that Si and SiGe based nanostructured materials may exhibit low thermal conductivity and overall promising properties for thermoelectric applications. Hence there is a considerable interest in developing accurate theoretical and computational methods which can help interpret recent measurements, identify the physical origin of the reduced thermal conductivity, as well as shed light on the interplay between disorder and nanostructuring in determining a high figure of merit. In this work, we investigate the capability of an atomistic Green's function method [1] to describe phonon transport in several types of Si and SiGe based systems: amorphous Si, SiGe alloys, planar and nanodot Si/SiGe multilayers. We compare our results with experimental data [2,3], and with the findings of molecular dynamics simulations and calculations based on the Boltzmann transport equation. [1] I. Savic, N. Mingo, and D. A. Stewart, Phys. Rev. Lett. 101, 165502 (2008). [2] S.-M. Lee, D. G. Cahill, and R. Venkatasubramanian, Appl. Phys. Lett. 70, 2957 (1997). [3] G. Pernot et al., submitted.

Tracer diffusion studies of 26Mg, 30Si and 18O in single crystal forsterite (Mg2SiO4) and of 18O in single crystal SiO2

International Nuclear Information System (INIS)

Schachtner, R.

1981-01-01

Tracer diffusion coefficients of Mg, Si and O in monocrystalline forsterite were determined by Sims as a function of temperature and crystal orientation. Former results on oxygen diffusion in SiO 2 single crystals using nuclear activation methods were confirmed by Sims data. The influence of crystal defects and impurities is discussed. (TW)

Preliminary study of the characteristics of a high Mg containing Al-Mg-Si alloy

International Nuclear Information System (INIS)

Yan, F; McKay, B J; Fan, Z; Chen, M F

2012-01-01

An Al-20Mg-4Si high Mg containing alloy has been produced and its characteristics investigated. The as-cast alloy revealed primary Mg 2 Si particles evenly distributed throughout an α-Al matrix with a β-Al 3 Mg 2 fully divorced eutectic phase observed in interdendritic regions. The Mg 2 Si particles displayed octahedral, truncated octahedral, and hopper morphologies. Additions of Sb, Ti and Zr had a refining influence reducing the size of the Mg 2 Si from 52 ± 4 μm to 25 ± 0.1 μm, 35 ± 1 μm and 34 ± 1 μm respectively. HPDC tensile test samples could be produced with a 0.6 wt.% Mn addition which prevented die soldering. Solution heating for 1 hr was found to dissolve the majority of the Al 3 Mg 2 eutectic phase with no evidence of any effect on the primary Mg 2 Si. Preliminary results indicate that the heat treatment has a beneficial effect on the elongation and the UTS.

On the way to enhance the optical absorption of a-Si in NIR by embedding Mg{sub 2}Si thin film

Energy Technology Data Exchange (ETDEWEB)

Chernev, I. M., E-mail: igor-chernev7@mail.ru; Shevlyagin, A. V.; Galkin, K. N. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Stuchlik, J. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); Remes, Z. [Institute of Physics of the ASCR, v. v. i., Cukrovarnická 10/112, 162 00 Praha 6 (Czech Republic); FBE CTU, Nam. Sitna 3105, 272 01 Kladno (Czech Republic); Fajgar, R. [Institute of Chemical Process Fundamentals of the ASCR, v. v. i., Rozvojová 135, 165 02 Praha 6 (Czech Republic); Galkin, N. G. [Institute of Automation and Control Processes of FEB RAS, Radio St. 5, 690041 Vladivostok (Russian Federation); Far Eastern Federal University, School of Natural Sciences, Sukhanova St. 8, 690950 Vladivostok (Russian Federation)

2016-07-25

Mg{sub 2}Si thin film was embedded in amorphous silicon matrix by solid phase epitaxy. The structure and optical properties were investigated by electron energy loss, X-ray photoelectron, Raman, and photo thermal deflection spectroscopy measurements. It was found that in the photon energy range of 0.8–1.7 eV, the light absorption of the structure with magnesium silicide (Mg{sub 2}Si) film embedded in a-Si(i) matrix is 1.5 times higher than that for the same structure without Mg{sub 2}Si.

Effect of Adding Elements on Microstructure of Mg-3Si Alloy

Directory of Open Access Journals (Sweden)

CUI Bin

2017-03-01

Full Text Available The microstructure of alloy Mg-3Si(mass fraction/%, same as below after successive additions with different elements of Zn, Nd, Gd and Y was observed and the microstructure evolution was investigated by scanning electron microscopy and X-ray diffraction. The results show the primary Mg2Si particles co-exist with eutectic Mg2Si particles in binary alloy Mg-Si. With minor addition of Zn element, only primary Mg2Si can be found in ternary Mg-3Si-3Zn system while eutectic Mg2Si particles disappear. In quaternary alloy Mg-2.0Nd-3.0Zn-3.0Si, the addition of Nd element can effectively refine the primary Mg2Si particles and form some Mg41Nd5 particles. After continuous adding of Gd and Y elements into quaternary system, Gd5Si3 and YSi particles increase significantly in the alloy Mg-8.0Gd-4.0Y-2.0Nd-3.0Zn-3.0Si, while volume fraction of primary Mg2Si decrease significantly. Thermo-Calc calculation predicts that the Gibbs free energy for primary particles Gd5Si3, YSi is lower, and therefore Gd, Y atom and Si are more likely to form compounds. In Mg-8Gd-4Y-2Nd-3Zn-3Si alloy, room temperature Gibbs free energy for primary particles Mg2Si, Gd5Si3, YSi is -9.56×104, -8.72×104, -2.83×104J/mol, respectively, and the mass fraction of these particles is 8.07%, 5.27%, 1.40% respectively.

Raman spectra of MgSiO3 . 10% Al2O3-perovskite at various pressures and temperatures

International Nuclear Information System (INIS)

Liu Lingun; Irifune, T.

1995-01-01

Variations of Raman spectra of MgSiO 3 . 10% Al 2 O 3 -perovskite were investigated up to about 270 kbar at room temperature and in the range 108-425 K at atmospheric pressure. Like MgSiO 3 -perovskite, the Raman frequencies of MgSiO 3 . 10% Al 2 O 3 -perovskite increase nonlinearly with increasing pressure and decrease linearly with increasing temperature within the experimental uncertainties and the range investigated. A comparison of these data with those of MgSiO 3 -perovskite suggests that MgSiO 3 . 10% Al 2 O 3 -perovskite is slightly more compressible than MgSiO 3 -perovskite, and that the volume thermal expansion for MgSiO 3 . 10% Al 2 O 3 -perovskite is also slightly greater than that for MgSiO 3 -perovskite. (orig.)

Thermal Treatment, Sliding Wear and Saline Corrosion of Al In Situ Reinforced with Mg2Si and Ex Situ Reinforced with TiC Particles

Science.gov (United States)

Lekatou, A. G.; Poulia, A.; Mavros, H.; Karantzalis, A. E.

2018-02-01

The main objective of this work is to produce a composite consisting of (a) a cast heat-treatable Al-Mg-Si alloy with high contents of Mg for corrosion resistance and Si to offset the Mg-due poor castability (in situ hypoeutectic Mg2Si/Al composite) and (b) TiC particles at high enough volume fractions (≤ 15%), in order to achieve a satisfactory combination of wear and corrosion performance. TiCp/Al-7Mg-5Si (wt.%) composites were produced by flux-assisted casting followed by solution and aging heat treatment. Solution treatment led to a relatively uniform dispersion and shape rounding of Mg2Si precipitates and Si particles. TiC particle addition resulted in refinement of primary Al, modification of the Mg2Si Chinese script morphology and refinement/spheroidization of primary Mg2Si. Heat treatment combined with TiC addition notably improved the sliding wear resistance of Al-7Mg-5Si. A wear mechanism has been proposed. The TiC/Al interfaces remained intact of corrosion during potentiodynamic polarization of the heat-treated materials in 3.5 wt.% NaCl. Different main forms of localized corrosion in 3.5 wt.% NaCl were identified for each TiC content (0, 5, 15 vol.%), depending on specific degradation favoring microstructural features (topology/size/interface wetting) at each composition.

The effect of doping on thermoelectric performance of p-type SnSe: Promising thermoelectric material

Energy Technology Data Exchange (ETDEWEB)

Singh, Niraj Kumar; Bathula, Sivaiah; Gahtori, Bhasker [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Tyagi, Kriti [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Acdemy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (NPL) Campus, New Delhi (India); Haranath, D. [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Dhar, Ajay, E-mail: adhar@nplindia.org [CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India)

2016-05-25

Tin selenide (SnSe) based thermoelectric materials are being explored for making inexpensive and efficient thermoelectric devices with improved thermoelectric efficiency. As both Sn and Se are earth abundant and relatively inexpensive and these alloys do not involve toxic materials, such as lead and expensive tellurium. Hence, in the present study, we have synthesized SnSe doped with 2 at% of aluminium (Al), lead (Pb), indium (In) and copper (Cu) individually, which is not reported in literature. Out of these, Cu doped SnSe resulted in enhancement of figure-of-merit (zT) of ∼0.7 ± 0.02 at 773 K, synthesized employing conventional fusion method followed by spark plasma sintering. This enhancement in zT is ∼16% over the existing state-of-the-art value for p-type SnSe alloy doped with expensive Ag. This enhancement in ZT is primarily due to the presence of Cu{sub 2}Se second phase associated with intrinsic nanostructure formation of SnSe. This enhancement has been corroborated with the microstructural characterization using field emission scanning electron microscopy and X-ray diffraction studies. Also, Cu doped SnSe exhibited a higher value of carrier concentration in comparison to other samples doped with Al, Pb and In. Further, the compatibility factor of Cu doped SnSe alloys exhibited value of 1.62 V{sup −1} at 773 K and it is suitable to segment with most of the novel TE materials for obtaining the higher thermoelectric efficiencies. - Highlights: • Tin selenide (SnSe) doped with non-toxic and inexpensive dopants. • Synthesized highly dense SnSe employing Spark plasma sintering. • Enhanced thermoelectric compatibility factor of SnSe. • Enhanced thermoelectric performance of SnSe doped with Copper.

Analysis of (Ba,Ca,Sr)3MgSi2O8:Eu2+, Mn2+ phosphors for application in solid state lighting

International Nuclear Information System (INIS)

Han, J.K.; Piqutte, A.; Hannah, M.E.; Hirata, G.A.; Talbot, J.B.; Mishra, K.C.; McKittrick, J.

2014-01-01

The luminescence properties of Eu 2+ and Mn 2+ co-activated (Ba,Ca,Sr) 3 MgSi 2 O 8 phosphors prepared by combustion synthesis were studied. Eu 2+ -activated (Ba,Ca,Sr) 3 MgSi 2 O 8 has a broad blue emission band centered at 450–485 nm and Eu 2+ –Mn 2+ -activated (Ba,Ca,Sr) 3 MgSi 2 O 8 exhibits a red emission around 620–703 nm, depending on the relative concentrations of Ba, Ca and Sr. The particle size of Eu 2+ and Mn 2+ co-activated (Ba,Ca) 3 MgSi 2 O 8 ranges from 300 nm to 1 μm depending on the metal ion and are agglomerated due to post-synthesis, high temperature annealing. The green emission of Ba 3 MgSi 2 O 8 originates from secondary phases (Ba 2 SiO 4 and BaMgSiO 4 ) confirmed by emission spectra and X-ray diffraction patterns. The secondary phases of Ba 3 MgSi 2 O 8 are removed by the addition of Sr. The quantum efficiencies range from 45% to 70% under 400 nm excitation and the lifetime of red emission of Ba 3 MgSi 2 O 8 decreases significantly with increasing temperature, which is 54% at 400 K of that at 80 K compared to that of blue emission (90% at 400 K of that at 80 K). -- highlights: • (Ba,Ca,Sr) 3 MgSi 2 O 8 :Eu 2+ , Mn 2+ phosphors were prepared by a combustion synthesis method. • The emission spectra consist of broad blue-emission band and red-emission band. • The quantum efficiencies range between 45% and 70%, depending on the relative concentrations of Ba, Ca and Sr. • The secondary phases were eliminated by additions of Sr. • Lifetime of the red-emission decreases with increasing temperature, suggesting that these phosphors are not useful for solid state lighting applications

The Influence of T6 Heat Treatment to Hardness and Microstructure of Al-Si-Mg Alloys Materials

International Nuclear Information System (INIS)

Eddy Djatmiko; Budiarto

2008-01-01

Al-Si-Mg alloy is one of aluminium alloys that is suitable to be used as a car piston material. This is because it has some benefits such as light weight, corrosion resistance and interesting color but its mechanical properties do not meet criteria of JIS H5201. For that reason, to meet the standard, its mechanical properties need to be improved. Mechanical properties of this alloy can be improved using many ways. In this research the alloy was T6 heat treated (holding times 4 hour with treatment temperature variation of 30, 150, 180, 210, and 240 o C). Some tests were conducted to these new alloys including hardness test, impact test, phase identification and micro structural analysis. Test results showed that the change mechanical properties occurs due to increasing temperature during T6 heat treatment to these alloys. The optimum mechanical properties were obtained at treatment temperature of 210 o C. In this condition, the alloy has hardness of 93.30 HVN and impact strength of 5.13 J/cm 2 and these results fulfil JIS H5201 standard. The alloy microstructure showed hypoeutectic structure comprising primary aluminium dendrite and Al-Si-Mg eutectic mixture. The result of phase identification after T6 heat treatment showed that Al-Si-Mg alloys have α-Al phase, Si phase and MnAl 6 phase. (author)

Decoupling interrelated parameters for designing high performance thermoelectric materials.

Science.gov (United States)

Xiao, Chong; Li, Zhou; Li, Kun; Huang, Pengcheng; Xie, Yi

2014-04-15

The world's supply of fossil fuels is quickly being exhausted, and the impact of their overuse is contributing to both climate change and global political unrest. In order to help solve these escalating problems, scientists must find a way to either replace combustion engines or reduce their use. Thermoelectric materials have attracted widespread research interest because of their potential applications as clean and renewable energy sources. They are reliable, lightweight, robust, and environmentally friendly and can reversibly convert between heat and electricity. However, after decades of development, the energy conversion efficiency of thermoelectric devices has been hovering around 10%. This is far below the theoretical predictions, mainly due to the interdependence and coupling between electrical and thermal parameters, which are strongly interrelated through the electronic structure of the materials. Therefore, any strategy that balances or decouples these parameters, in addition to optimizing the materials' intrinsic electronic structure, should be critical to the development of thermoelectric technology. In this Account, we discuss our recently developed strategies to decouple thermoelectric parameters for the synergistic optimization of electrical and thermal transport. We first highlight the phase transition, which is accompanied by an abrupt change of electrical transport, such as with a metal-insulator and semiconductor-superionic conductor transition. This should be a universal and effective strategy to optimize the thermoelectric performance, which takes advantage of modulated electronic structure and critical scattering across phase transitions to decouple the power factor and thermal conductivity. We propose that solid-solution homojunction nanoplates with disordered lattices are promising thermoelectric materials to meet the "phonon glass electron crystal" approach. The formation of a solid solution, coupled with homojunctions, allows for

First-principles study on doping and temperature dependence of thermoelectric property of Bi2S3 thermoelectric material

International Nuclear Information System (INIS)

Guo, Donglin; Hu, Chenguo; Zhang, Cuiling

2013-01-01

Graphical abstract: The direction-induced ZT is found. At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36, which is three times as much as maximal laboratorial value. This result matches well the analysis of electron effective mass. Highlights: ► Electrical transportations of Bi 2 S 3 depend on the concentration and temperature. ► The direction-induced ZT is found. ► At ZZ direction and n = 1.47 × 10 19 cm −3 , the ZT can reach maximal value, 0.36. ► The maximal ZT value is three times as much as maximal laboratorial value. ► By doping and temperature tuning, Bi 2 S 3 is a promising thermoelectric material. - Abstract: The electronic structure and thermoelectric property of Bi 2 S 3 are investigated. The electron and hole effective mass of Bi 2 S 3 is analyzed in detail, from which we find that the thermoelectric transportation varies in different directions in Bi 2 S 3 crystal. Along ac plane the higher figure of merit (ZT) could be achieved. For n-type doped Bi 2 S 3 , the optimal doping concentration is found in the range of (1.0–5.0) × 10 19 cm −3 , in which the maximal ZT reaches 0.21 at 900 K, but along ZZ direction, the maximal ZT reaches 0.36. These findings provide a new understanding of thermoelectricity-dependent structure factors and improving ZT ways. The donor concentration N increases as T increases at one bar of pressure under a suitable chemical potential μ, but above this chemical potential μ, the donor concentration N keeps a constant

Effect of molar ratios of MgO/Al{sub 2}O{sub 3} on the sintering behavior and thermal shock resistance of MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics

Energy Technology Data Exchange (ETDEWEB)

Feng, Dong, E-mail: 1078155409@qq.com [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Luo, Xudong, E-mail: luoxudongs@aliyun.com [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China); Zhang, Guodong [School of High Temperature Materials and Magnesium Resource Engineering, University of Science and Technology Liaoning, Anshan 114051 (China); Xie, Zhipeng [Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084 (China)

2017-01-01

In order to determine the relationship between the property of MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics and molar ratios of MgO/Al{sub 2}O{sub 3}, especially the sintering behavior and thermal shock resistance, the MgOAl{sub 2}O{sub 3}SiO{sub 2} composite ceramics were fabricated with micro-size MgO, Al{sub 2}O{sub 3} powder and nano-size SiO{sub 2} as main raw materials. The sample was characterized by phase analysis, densification and thermal shock times. Moreover, field emission scanning electron microscope was also conducted to study microstructure of the samples before and after thermal shock. Effect of different molar ratios of MgO/Al{sub 2}O{sub 3} on the sintering behavior and thermal shock resistance of composite ceramics were investigated. The results showed that the sample possess better sintering behavior and thermal shock resistance with the molar ratio of MgO/Al{sub 2}O{sub 3} equal to 2/1. Grains of periclase and spinel were directly bonded together, resulting in a dense and compact microstructure, and the bulk density of obtained sample reached 3.4 g/cm{sup 3}. The microstructure of sample after thermal shock revealed that the crack propagation path was deflected and bifurcated, the main-crack propagation was restricted and more fracture energy was consumed, the thermal shock resistance of composite ceramics was greatly improved. - Highlights: • Effect of MgO/Al{sub 2}O{sub 3} on the composite ceramic was firstly researched with 1 mol% SiO{sub 2}. • Microcracks for a short distance by interlinking can eliminate the crack propagation. • The composite ceramic have optimal synthetic property with MgO/Al{sub 2}O{sub 3} was 2/1.

Structure of Na2O·MO·SiO2·CaF2 (M=Mg, Ca) oxyfluoride glasses

International Nuclear Information System (INIS)

Cheng Jinshu; Deng Wei; Wang Mitang

2012-01-01

(9-x)CaO·xMgO·15Na 2 O·60SiO 2 ·16CaF 2 (x=0, 2, 4, 6, and 9) oxyfluoride glasses were prepared. Utilizing the Raman scattering technique together with 29 Si and 19 F MAS NMR, the effect of alkaline metal oxides on the Q species of glass was characterized. Raman results show that as magnesia is added at the expense of calcium oxide, the disproportional reaction Q 3 →Q 4 +Q 2 (Q n is a SiO 4 tetrahedron with n bridging oxygens) prompted due to the high ionic field strength of magnesia, magnesium oxide entered into the silicate network as tetrahedral MgO 4 , and removed other modifying ions for charge compensation. This reaction was confirmed by 29 Si MAS NMR. 19 F MAS NMR results show that fluorine exists in the form of mixed calcium sodium fluoride species in all glasses and no Si-F bonds were formed. As CaO is gradually replaced by MgO (x=6, 9), a proportion of the magnesium ions combines with fluorine to form the MgF + species. Meanwhile, some part of Na + ions complex F - in the form of F-Na(6).

Test System for Thermoelectric Modules and Materials

Science.gov (United States)

Hejtmánek, J.; Knížek, K.; Švejda, V.; Horna, P.; Sikora, M.

2014-10-01

We present a design for a complex measuring device that enables its user to assess the parameters of power-generating thermoelectric modules (TEMs) (or bulk thermoelectric materials) under a wide range of temperatures ( T cold = 25°C to 90°C, T hot TEM, the actual heat flow through the module, and its mechanical load, which can be varied during the measurement. Key components of our testing setup are (i) a measuring chamber where the TEM/material is compressed between thermally shielded heating blocks equipped with a mechanical loading system and water-cooled copper-based cooler, (ii) an electrical load system, (iii) a type K thermocouple array connected to a data acquisition computer, and (iv) a thermostatic water-based cooling system with electronically controlled flow rate and temperature of cooling water. Our testing setup represents a useful tool able to assess, e.g., the thermoelectric parameters of newly developed TEMs and materials or to evaluate the thermoelectric parameters of commercially available modules and materials for comparison with values declared by the manufacturer.

Decaying shock studies of phase transitions in MgO-SiO2 systems: implications for the Super-Earths' interiors

Science.gov (United States)

Bolis, R.; Morard, G.; Vinci, T.; Ravasio, A.; Bambrink, E.; Guarguaglini, M.; Koenig, M.; Musella, R.; Françoise, R.; Bouchet, J.; Ozaki, N.; Miyanishi, K.; Sekine, T.; Sakawa, Y.; Sano, T.; Kodama, R.; Guyot, F. J.; Benuzzi, A.

2016-12-01

Mantles of telluric exoplanets, so-called Earth-like and Super-Earths, are expected to be mainly composed of different type of oxides, such as periclase (MgO), enstatite (MgSiO3) and forsterite (Mg2SiO4). Determining the phase diagrams, melting curves and liquid properties of these compounds under extreme pressure (0.2-1 TPa) is crucial to model the internal dynamic of these exoplanets, as the melting of mantle components controls planetary temperature profiles [6]. Experimentally, these planetary thermodynamic states can be achieved with laser-shock compression. Here we present laser-driven decaying shock experiments on MgO, MgSiO3 and Mg2SiO4 samples performed at LULI and GEKKO laser facilities, where we focused 1.2-2.5 ns laser pulses with an intensity between 3-8 1013 W/cm2 exploring pressures between 0.2 and 1 TPa and temperature between 5000 and 30000 K. We determined the thermodynamic states using rear side optical diagnostics. We observed a single transition for MgO associated to melting (at 0.47 TPa ± 0.04 and 9863 ± 812 K) and no evidence of a liquid-liquid transition, dissociation or melting for all the other compounds in the range 150-500 Gpa and 200-800 Gpa respectively for MgSiO3 and Mg2SiO4. Some implications are presented comparing our data experimental and theoretical data found in literature [1, 2, 3, 4, 5]. In particular these results represent a key input to solve the controversy on a possible MgSiO3 liquid-liquid phase transition. Moreover we propose a revision of the phase diagram of MgO, with a lower melting line which results in a lower temperature profile for super-Earths. Finally our data evidence the presence of a poor electrically conducting liquid in the phase diagram of all the studied material, with implications for the modelling of magnetic field generation via dynamo mechanism.[1] McWilliams et al., Science 338 (2012): 1330-1333. [2] Spaulding et al., Physical Review Letters108 (2012): 065701. [3] Root et al., Physical Review

Electrochemical performance of Si-CeMg{sub 12} composites as anode materials for Li-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Lu, Z.W. [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China); Tianjin Institute of Power Sources, Tianjin 300381 (China); Wang, G.; Gao, X.P. [Institute of New Energy Material Chemistry, Nankai University, Tianjin 300071 (China); Liu, X.J.; Wang, J.Q. [Tianjin Institute of Power Sources, Tianjin 300381 (China)

2009-04-01

The Si-CeMg{sub 12} composites with 30 wt.%, 40 wt.% and 50 wt.% Si, were synthesized by directly ball milling Si and CeMg{sub 12} alloy. The microstructure of the Si-CeMg{sub 12} composites is confirmed by X-ray diffraction (XRD) and transmission electron microscopy (TEM), respectively. It is demonstrated from TEM images that active Si nanoparticles are distributed in the inactive CeMg{sub 12} matrix. The electrochemical performance of the Si-CeMg{sub 12} composites as a function of Si content is investigated. The maximum reversible (charge) capacities of the ball-milled Si-CeMg{sub 12} composites with 30 wt.%, 40 wt.% and 50 wt.% Si reach 470, 690 and 1080 mAh g{sup -1}, respectively, after full activations. It is found that the Si-CeMg{sub 12} composite with 40 wt.% Si delivers a larger reversible capacity and better cycle ability because the uniform distribution of active Si nanoparticles embedded in the CeMg{sub 12} matrix, which can accommodate the volume expansion of the composite during Li-alloying/dealloying processes. After subsequent cycles, the recrystallization of Si with lattice shrinkage is observed, which is unfavorable to the Li-alloying/dealloying reaction. The degeneration of CeMg{sub 12}-Si composites during repeated cycling is attributed not only to the Si pulverization led by the volume change, but partially also to the irreversible phase transformation of Si. (author)

Design and Optimization of Effective Segmented Thermoelectric Generator for Waste Heat Recovery

DEFF Research Database (Denmark)

Pham, Hoang Ngan

ranges of 300 ‒ 700, and 900 – 1100 K are considered. The obtained results reveals that segmented thermoelectric generator comprising of Bi0.6Sb1.4Te3/Ba8Au5.3Ge40.7/PbTe-SrTe/SiGe as p-leg and either segmented Bi2Te3/PbTe/SiGe or Bi2Te3/Ba0.08La0.05Yb0.04Co4Sb12/La3Te4 as n-leg working in 300 – 1100 K...... been focused on material development, realizing high efficient thermoelectric generators from such well-developed materials is still limited. Moreover, no single thermoelectric material could withstand the wide temperature range required to boost efficiency of TEGs. By segmentation of different TE...... materials which operate optimally in each temperature range, this study aims at developing high performance segmented TEGs for medium-high (450 – 850 K) temperature application. The research is focused on the challenges in joining and minimizing the contact resistances between different TE materials...

Interface plasmon-phonons modes in ion-beam synthesized Mg2Si nanolayers

International Nuclear Information System (INIS)

Baleva, M.; Zlateva, G.

2009-01-01

Raman scattering of samples, representing n- and p-type Si matrix with unburied Mg 2 Si nanolayers, formed by ion-beam synthesis, are studied. Despite the features in the Raman spectra attributed to the polariton modes with frequencies between those of the TO and LO phonons, additional features outside this interval are detected. The frequencies of these features are very sensitive to the plasma frequency, being different in the n- and p-type Si matrix and to the annealing time. The latter implies the generation of interface plasmonphonons modes. The frequencies of the interface plasmon-phonon modes are calculated and compared with the experimental results. The order of the carrier concentration in Mg 2 Si, the data of which are not available in the literature, is evaluated. (authors)

Nanostructured layers of thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Urban, Jeffrey J.; Lynch, Jared; Coates, Nelson; Forster, Jason; Sahu, Ayaskanta; Chabinyc, Michael; Russ, Boris

2018-01-30

This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a method includes providing a plurality of nanostructures. The plurality of nanostructures comprise a thermoelectric material, with each nanostructure of the plurality of nanostructures having first ligands disposed on a surface of the nanostructure. The plurality of nanostructures is mixed with a solution containing second ligands and a ligand exchange process occurs in which the first ligands disposed on the plurality of nanostructures are replaced with the second ligands. The plurality of nanostructures is deposited on a substrate to form a layer. The layer is thermally annealed.

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

Science.gov (United States)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Thermoelectric nanomaterials materials design and applications

CERN Document Server

Koumoto, Kunihito

2014-01-01

Presently, there is an intense race throughout the world to develop good enough thermoelectric materials which can be used in wide scale applications. This book focuses comprehensively on very recent up-to-date breakthroughs in thermoelectrics utilizing nanomaterials and methods based in nanoscience. Importantly, it provides the readers with methodology and concepts utilizing atomic scale and nanoscale materials design (such as superlattice structuring, atomic network structuring and properties control, electron correlation design, low dimensionality, nanostructuring, etc.). Furthermore, also

Fabrication of Spherical AlSi10Mg Powders by Radio Frequency Plasma Spheroidization

Science.gov (United States)

Wang, Linzhi; Liu, Ying; Chang, Sen

2016-05-01

Spherical AlSi10Mg powders were prepared by radio frequency plasma spheroidization from commercial AlSi10Mg powders. The fabrication process parameters and powder characteristics were investigated. Field emission scanning electron microscope, X-ray diffraction, laser particle size analyzer, powder rheometer, and UV/visible/infrared spectrophotometer were used for analyses and measurements of micrographs, phases, granulometric parameters, flowability, and laser absorption properties of the powders, respectively. The results show that the obtained spherical powders exhibit good sphericity, smooth surfaces, favorable dispersity, and excellent fluidity under appropriate feeding rate and flow rate of carrier gas. Further, acicular microstructures of the spherical AlSi10Mg powders are composed of α-Al, Si, and a small amount of Mg2Si phase. In addition, laser absorption values of the spherical AlSi10Mg powders increase obviously compared with raw material, and different spectra have obvious absorption peaks at a wavelength of about 826 nm.

Materials growth and characterization of thermoelectric and resistive switching devices

Science.gov (United States)

Norris, Kate J.

In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of

Blue and red dual emission nanophosphor CaMgSi2O6:Eun+; crystal structure and electronic configuration

International Nuclear Information System (INIS)

Pawar, A.U.; Jadhav, Abhijit P.; Pal, U.; Kim, Byung Kyu; Kang, Young Soo

2012-01-01

Well dispersed Eu doped CaMgSi 2 O 6 (CMS) nanoparticles of 12–19 nm average sizes were synthesized by the co-precipitation method using different ratios of water and ethanol mixture as a solvent and subsequent air annealing. While ethanol as solvent produced pure CMS in monoclinic phase, pure water produced Ca 2 MgSi 2 O 7 (C2MS) and CMS in the mixed phase. Apart from the composition of CMS and C2MS, concentration and ionization state of the activator depended strongly on the composition (effective dielectric constant) of the solvent. Both the blue and red emission bands could be revealed for the europium activated CMS nanoparticles using single europium precursor. Efficiency of blue and red emissions in the nanophosphors, controlled by the relative abundance of europium in Eu 2+ and Eu 3+ oxidation states, could be controlled by adjusting the water content in the solvent. The relative intensity of the red emission (615 nm) decreased with the increase of water content in the solvent. - Highlights: ► We have synthesized Eu doped CaMgSi 2 O 6 using different volume ratios of water and ethanol solvent. ► We observed Ca 2 MgSi 2 O 7 phase increases with increasing amount of water in solvent. ► Dual emission was observed using single europium precursor. ► As synthesized material can be used for wavelength conversion application.

Ex Situ and Operando Studies on the Role of Copper in Cu-Promoted SiO2-MgO Catalysts for the Lebedev Ethanol-to-Butadiene Process

NARCIS (Netherlands)

Angelici, Carlo|info:eu-repo/dai/nl/345731506; Meirer, Florian; van der Eerden, Ad M. J.|info:eu-repo/dai/nl/304840483; Schaink, Herrick L.; Goryachev, Andrey; Hofmann, Jan P.|info:eu-repo/dai/nl/355351110; Hensen, Emiel J. M.; Weckhuysen, Bert M.|info:eu-repo/dai/nl/285484397; Bruijnincx, Pieter C. A.|info:eu-repo/dai/nl/33799529X

2015-01-01

Dehydrogenation promoters greatly enhance the performance of SiO2-MgO catalysts in the Lebedev process. Here, the effect of preparation method and order of addition of Cu on the structure and performance of Cu-promoted SiO2-MgO materials is detailed. Addition of Cu to MgO via incipient wetness

Highly stable carbon coated Mg2Si intermetallic nanoparticles for lithium-ion battery anode

Science.gov (United States)

Tamirat, Andebet Gedamu; Hou, Mengyan; Liu, Yao; Bin, Duan; Sun, Yunhe; Fan, Long; Wang, Yonggang; Xia, Yongyao

2018-04-01

Silicon is an ideal candidate anode material for Li-ion batteries (LIBs). However, it suffers from rapid capacity fading due to large volume expansion upon lithium insertion. Herein, we design and fabricate highly stable carbon coated porous Mg2Si intermetallic anode material using facile mechano-thermal technique followed by carbon coating using thermal vapour deposition (TVD), toluene as carbon source. The electrode exhibits an excellent first reversible capacity of 726 mAh g-1 at a rate of 100 mA g-1. More importantly, the electrode demonstrates high rate capability (380 mAh g-1 at high rate of 2 A g-1) as well as high cycle stability, with capacity retentions of 65% over 500 cycles. These improvements are attributable to both Mg supporting medium and the uniform carbon coating, which can effectively increase the conductivity and electronic contact of the active material and protects large volume alterations during the electrochemical cycling process.

Energy stored in BeO, MgO, Al2O3 and SiO2 oxides irradiated with neutrons

International Nuclear Information System (INIS)

Roux, Andre

1969-01-01

Within the field of researches on refractory oxides which may be used in structure materials in atomic pile, the objective of this research thesis has been the measurement of the energy stored in some specific oxides (BeO, MgO, Al 2 O 3 and SiO 2 ) after their irradiation in a nuclear reactor. This measurement is performed by 'healing' the irradiated substance by means of thermal treatments during which sample initial mass and morphologies are preserved. The measurement of the Wigner energy is then performed by differential enthalpy analysis. The first part reports the experimental determination of Wigner energies (measurement apparatus, method of ballistic differential enthalpy analysis, thermo-gram compensation). The second part presents the Wigner energies obtained for the sintered BeO, the sintered MgO, the sintered Al 2 O 3 , and the vitreous SiO 2 . The third part reports the result interpretation

Portable Thermoelectric Power Generator Coupled with Phase Change Material

OpenAIRE

Lim Chong C.; Al-Kayiem Hussain H.; Sing Chin Y.

2014-01-01

Solar is the intermittent source of renewable energy and all thermal solar systems having a setback on non-functioning during the night and cloudy environment. This paper presents alternative solution for power generation using thermoelectric which is the direct conversion of temperature gradient of hot side and cold side of thermoelectric material to electric voltage. Phase change material with latent heat effect would help to prolong the temperature gradient across thermoelectric material f...

The Influence of Aluminum on the Microstructure and Hardness of Mg-5Si-7Sn Alloy

Directory of Open Access Journals (Sweden)

Rzychoń T.

2016-03-01

Full Text Available Magnesium alloys due the low density and good mechanical properties are mainly used in the automotive and aerospace industry. In recent years, magnesium alloys are extensively developed for use in high temperatures (above 120°C. Among these alloys, magnesium alloys containing tin and silicon have large possibilities of application due to the formation of thermally stable intermetallic Mg2Sn and Mg2Si. In this paper the influence of aluminum and heat treatment on the on the microstructure and hardness of Mg-7Sn-5Si alloy is reported. It was found that the microstructure of Mg-7Sn-5Si alloy consist of α-Mg solid solution, Mg2Sn and Mg2Si compounds. Addition of 2 wt% of Al to Mg-7Sn-5Si alloy causes the formation of Al2Sn phase. Moreover, Al dissolves in the α-Mg solid solution. The solution heat-treatment of tested alloys at 500°C for 24 h causes the dissolve the Mg2Sn phase in the α-Mg matrix and spheroidization of Mg2Si compound. The Mg2Si primary crystals are stable at solution temperature. After ageing treatment the precipitation process of equilibrium Mg2Sn phase was found in both alloys. The addition of aluminum has a positive effect on the hardness of Mg-7Sn-5Si alloy. In case of Mg-5Si-7Sn-2Al alloy the highest hardness was obtained for sample aged for 148 h at 250°C (88 HV2, while in case of Al-free alloy the highest hardness is 70 HV for material aged for 148 h at 250°C.

Quasi-2D silicon structures based on ultrathin Me2Si (Me = Mg, Ca, Sr, Ba) films

Science.gov (United States)

Migas, D. B.; Bogorodz, V. O.; Filonov, A. B.; Borisenko, V. E.; Skorodumova, N. V.

2018-04-01

By means of ab initio calculations with hybrid functionals we show a possibility for quasi-2D silicon structures originated from semiconducting Mg2Si, Ca2Si, Sr2Si and Ba2Si silicides to exist. Such a 2D structure is similar to the one of transition metal chalcogenides where silicon atoms form a layer in between of metal atoms aligned in surface layers. These metal surface atoms act as pseudo passivation species stabilizing crystal structure and providing semiconducting properties. Considered 2D Mg2Si, Ca2Si, Sr2Si and Ba2Si have band gaps of 1.14 eV, 0.69 eV, 0.33 eV and 0.19 eV, respectively, while the former one is also characterized by a direct transition with appreciable oscillator strength. Electronic states of the surface atoms are found to suppress an influence of the quantum confinement on the band gaps. Additionally, we report Sr2Si bulk in the cubic structure to have a direct band gap of 0.85 eV as well as sizable oscillator strength of the first direct transition.

Thermoelectric materials and devices made therewith

International Nuclear Information System (INIS)

Moore, D.E.

1985-01-01

The disclosed invention includes improved devices and materials for thermoelectric conversion, particularly for operation at temperatures of 300 0 C. and below. Disordered p-type semiconductor elements incorporate compound adjuvants of silver and lead to achieve enhanced ''figure of merit'' values and corresponding increased efficiencies of thermoelectric conversion. Similar results are obtained with disordered n-type elements by employing lowered selenium contents, preferably in combination with cuprous bromide. Improved conversion devices include powder pressed elements from one or both of these materials

Enhancement of the mechanoluminescence properties on Ca2MgSi2O7:Dy3+ phosphor by co-doping of charge compensator ions

Science.gov (United States)

Sahu, Ishwar Prasad

2016-08-01

In the present article, effect of charge compensator ions (R+ = Li+, Na+ and K+) on dysprosium-doped di-calcium magnesium di-silicate (Ca2MgSi2O7:Dy3+) phosphors were investigated. The Ca2MgSi2O7:Dy3+ and Ca2MgSi2O7:Dy3+, R+ phosphors, were prepared by solid-state reaction method. The crystal structures of sintered phosphors were an akermanite-type structure which belongs to the tetragonal crystallography. The peaks of mechanoluminescence (ML) intensity were increased linearly with increasing impact velocity of the moving piston. Thus, present investigation indicates that the piezoelectricity was responsible to produce ML in prepared phosphors. The time of the peak ML intensity and the decay rate did not change significantly with respect to increasing impact velocity. Addition of charge compensator ions enhances the luminescence intensity of prepared Ca2MgSi2O7:Dy3+ phosphors, because they neutralize the charge generated by Dy3+ substitution for Ca2+ ions. The role of Li+ ions among all charge compensator ions (Na+ or K+) used was found to be most effective for enhanced Dy3+ ion emission. These ML materials can be used in the devices such as stress sensor, fracture sensor, impact sensor, damage sensors, safety management monitoring system and fuse system for army warheads.

Knudsen pump driven by a thermoelectric material

International Nuclear Information System (INIS)

Pharas, Kunal; McNamara, Shamus

2010-01-01

The first use of a thermoelectric material in the bidirectional operation of a gas pump using thermal transpiration has been demonstrated. The thermoelectric material maintains a higher temperature difference which favors thermal transpiration and thus increases the efficiency of gas pumping. Since the hot and cold sides of the thermoelectric material are reversible, the direction of the pump may be changed by reversing the electrical current direction. Two different pump designs are presented that illustrate some of the design tradeoffs. The pumps are characterized by measuring the pressure difference that may be generated and by measuring the flow rate in the forward and reverse directions. For a pump composed of a porous material with a pore size of 100 nm, a maximum flow rate of 0.74 cm 3 min −1 and a maximum pressure of 1.69 kPa are achieved

Experience melting through the Earth's lower mantle via LH-DAC experiments on MgO-SiO2 and CaO-MgO-SiO2 systems

Science.gov (United States)

Baron, Marzena A.; Lord, Oliver T.; Walter, Michael J.; Trønnes, Reidar G.

2015-04-01

The large low shear-wave velocity provinces (LLSVPs) and ultra-low velocity zones (ULVZs) of the lowermost mantle [1] are likely characterized by distinct chemical compositions, combined with temperature anomalies. The heterogeneities may have originated by fractional crystallization of the magma ocean during the earliest history of the Earth [2,3] and/or the continued accretion at the CMB of subducted basaltic oceanic crust [4,5]. These structures and their properties control the distribution and magnitude of the heat flow at the CMB and therefore the convective dynamics and evolution of the whole Earth. To determine the properties of these structures and thus interpret the seismic results, a good understanding of the melting phase relations of relevant basaltic and peridotitic compositions are required throughout the mantle pressure range. The melting phase relations of lower mantle materials are only crudely known. Recent experiments on various natural peridotitic and basaltic compositions [6-8] have given wide ranges of solidus and liquidus temperatures at lower mantle pressures. The melting relations for MgO, MgSiO3 and compositions along the MgO-SiO2 join from ab initio theory [e.g. 9,10] is broadly consistent with a thermodynamic model for eutectic melt compositions through the lower mantle based on melting experiments in the MgO-SiO2 system at 16-26 GPa [3]. We have performed a systematic study of the melting phase relations of analogues for peridotitic mantle and subducted basaltic crust in simple binary and ternary systems that capture the major mineralogy of Earth's lower mantle, using the laser-heated diamond anvil cell (LH-DAC) technique at 25-100 GPa. We determined the eutectic melting temperatures involving the following liquidus mineral assemblages: 1. bridgmanite (bm) + periclase (pc) and bm + silica in the system MgO-SiO2 (MS), corresponding to model peridotite and basalt compositions 2. bm + pc + Ca-perovskite (cpv) and bm + silica + cpv in the

The effect of charge carrier and doping site on thermoelectric properties of Mg2Sn0.75Ge0.25

International Nuclear Information System (INIS)

Saparamadu, Udara; Mao, Jun; Dahal, Keshab; Zhang, Hao; Tian, Fei; Song, Shaowei; Liu, Weishu; Ren, Zhifeng

2017-01-01

Mg 2 Sn 0.75 Ge 0.25 has been recently demonstrated to be a promising thermoelectric material for power generation in the temperature range from room temperature to 723 K because of the high power factor of ∼54 μW cm −1  K −2 upon Sb doping to the Sn site. The enhanced density of states effective mass and weak electron scattering from the alloying effect are believed to be the main reasons for the high power factor (PF) and hence high figure of merit (ZT). In this study, it is shown that the right choice of carrier donor also plays an important role in obtaining high power factor. The effect of carrier donors Y and La at Mg-site and Bi and P at Sn-site in Mg 2 Sn 0.75 Ge 0.25 is systematically investigated. It is found that charge donors at the Sn-site are much more effective than at the Mg-site in enhancing PF and ZT. Bi doped Mg 2 Sn 0.73 Bi 0.02 Ge 0.25 shows a peak ZT of ∼1.4 at 673 K, a peak PF of ∼54 μW cm −1  K −2 at 577 K, which resulted in an engineering figure of merit (ZT) eng of ∼0.76 and (PF) eng of ∼2.05 W m −1  K −1 for cold side fixed at 323 K and hot side at 723 K.

Nano-Micro Materials Enabled Thermoelectricity From Window Glasses

KAUST Repository

Inayat, Salman Bin

2012-11-03

and n type thermoelectric materials, this novel energy generation technique promises 304 watts of thermoelectricity from a 9 m2 glass window utilizing temperature difference of 20 OC. In addition to be useful even during off sunshine hours of the day, these energy harvesting windows will be capable of power generation even in the absence of a cooling systems inside the building as long as a natural temperature gradient exists between the two counter environments. With an increasing trend of having the exterior of buildings and high rises entirely made up of glass, this work offers an innovative transformation of these building exteriors into mass scale energy harvesters capable of running average lighting loads inside the building hence providing a complimentary source of electricity to the main power grid.

Microstructure and mechanical properties of friction stir welded Al/Mg2Si metal matrix cast composite

International Nuclear Information System (INIS)

Nami, H.; Adgi, H.; Sharifitabar, M.; Shamabadi, H.

2011-01-01

In this research, friction stir weldability of 15 wt.% Mg 2 Si particulate aluminum matrix cast composite and effects of tool rotation speed and number of welding passes on microstructure and mechanical properties of the joints were investigated. Microstructural observations were carried out by employing optical and scanning electron microscopy of the cross sections perpendicular to the tool traverse direction. Mechanical properties including microhardness and tensile strength were evaluated in detail. The results showed fragmentation of Mg 2 Si particles and Mg 2 Si needles existing in eutectic structure in stir zone. Also, homogeneous distribution of Mg 2 Si particles was observed in the stir zone as a result of stirring with high plastic strains. Tension test results indicated that tensile strength of the joint had an optimum at 1120 rpm tool rotation speed and decreased with increasing of the number of welding passes. Hardness of the joint increased due to modification of solidification microstructure of the base composite. This research indicates that friction stir welding is a good candidate for joining of 15 wt.% Mg 2 Si aluminum matrix composite castings.

Electrical properties and figures of merit for new chalcogenide-based thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Schindler, J L; Hogan, T P; Brazis, P W; Kannewurf, C R; Chung, D Y; Kanatzidis, M G

1997-07-01

New Bi-based chalcogenide compounds have been prepared using the polychalcogenide flux technique for crystal growth. These materials exhibit characteristics of good thermoelectric materials. Single crystals of the compound CsBi{sub 4}Te{sub 6} have shown conductivity as high as 2440 S/cm with a p-type thermoelectric power of {approx}+110 {micro}V/K at room temperature. A second compound, {beta}-K{sub 2}Bi{sub 8}Se{sub 13} shows lower conductivity {approx}240 S/cm, but a larger n-type thermopower {approx}{minus}200 {micro}V/K. Thermal transport measurements have been performed on hot-pressed pellets of these materials and the results show comparable or lower thermal conductivities than Bi{sub 2}Te{sub 3}. This improvement may reflect the reduced lattice symmetry of the new chalcogenide thermoelectrics. The thermoelectric figure of merit for CsBi{sub 4}Te{sub 6} reaches ZT {approx} 0.32 at 260 K and for {beta}-K{sub 2}Bi{sub 8}Se{sub 13} ZT {approx} 0.32 at room temperature, indicating that these compounds are viable candidates for thermoelectric refrigeration applications.

Magneto-transport and thermoelectric properties of epitaxial FeSb{sub 2} thin film on MgO substrate

Energy Technology Data Exchange (ETDEWEB)

Duong, Anh Tuan; Rhim, S. H., E-mail: sonny@ulsan.ac.kr; Shin, Yooleemi; Nguyen, Van Quang; Cho, Sunglae, E-mail: slcho@ulsan.ac.kr [Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749 (Korea, Republic of)

2015-01-19

We report magneto-transport and thermoelectric properties of FeSb{sub 2} thin film epitaxially grown on the MgO substrate using molecular beam epitaxy. The film exhibits compressive strain of 1.74% owing to large lattice mismatch, whose physical consequences are nontrivial. Magnetic phase has been changed from diamagnetic in bulk, as evidenced by anomalous Hall effect (AHE) and negative magneto-resistance (MR). The FeSb{sub 2} film is semiconducting without any metallic transition unlike the bulk counterpart. In particular, hysteresis in MR with distinct feature of AHE is evident with coercive field of 500 and 110 Oe for T = 20 and 50 K, respectively. Furthermore, from the Seebeck coefficients and temperature dependence of the resistivity, it is evident that the film is semiconducting with small band gap: 3.76 meV for T < 40 K and 13.48 meV for T > 40 K, respectively, where maximum thermoelectric power factor of 12 μV/cm·K at T = 50 K.

Express method for contactless measurement of parameters of thermoelectric materials

Directory of Open Access Journals (Sweden)

Ashcheulov A. A.

2015-08-01

Full Text Available The paper presents an original method for contactless express measurement of parameters of thermoelectric materials. The presence of a combination of AC and DC magnetic fields in the gap of the oscillating circuit, where the monitored sample of the thermoelectric material is located, leads — due to Ampere force — to delamination of geometric regions of the occurrence of half-cycles of Foucault current. This in turn causes the appearance of additional heat losses in the oscillating circuit caused by Peltier effect. Computer modeling of these processes with the use of the software package ComsolFenlab 3.3 allowed determining the nature and magnitude of the electric currents in oscillating circuit, the range of operating frequencies, and the ratio of amplitudes of the variable and fixed components of the magnetic field. These components eventually cause a certain temperature difference along the controlled sample, which difference is proportional to the thermoelectric figure of merit Z of the material. The basic expressions are obtained for determining the value of the Seebeck coefficient a, thermal conductivity ?, electrical conductivity ? and thermoelectric figure of merit Z. A description is given to the design of the device for contactless express measurement of parameters of thermoelectric materials based on Bi—Te—Se—Sb solid solutions. Its distinctive feature is the ability to determine the symmetric and asymmetric components of the electric conductivity of the material values. The actual error in parameter measurement in this case is 2%.

Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Colpitts, T

1997-07-01

Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

Half-Heusler Alloys as Promising Thermoelectric Materials

Science.gov (United States)

Page, Alexander A.

This thesis describes Ph.D. research on the half-Heusler class of thermoelectric materials. Half-Heusler alloys are a versatile class of materials that have been studied for use in photovoltaics, phase change memory, and thermoelectric power generation. With respect to thermoelectric power generation, new approaches were recently developed in order to improve the thermoelectric figure of merit, ZT, of half-Heusler alloys. Two of the strategies discussed in this work are adding excess Ni within MNiSn (M = Ti, Zr, or Hf) compounds to form full-Heusler nanostructures and using isoelectronic substitution of Ti, Zr, and Hf in MNiSn compounds to create microscale grain boundaries. This work uses computational simulations based on density functional theory, combined with the cluster expansion method, to predict the stable phases of pseudo-binary and pseudo-ternary composition systems. Statistical mechanics methods were used to calculate temperature-composition phase diagrams that relate the equilibrium phases. It is shown that full-Heusler nanostructures are predicted to remain stable even at high temperatures, and the microscale grain boundaries observed in (Ti,Zr,Hf)NiSn materials are found to be thermodynamically unstable at equilibrium. A new strategy of combining MNiSn materials with ZrNiPb has also recently emerged, and theoretical and experimental work show that a solid solution of the two materials is stable.

Reaction rim growth in the system MgO-Al2O3-SiO2 under uniaxial stress

Science.gov (United States)

Götze, Lutz Christoph; Abart, Rainer; Rybacki, Erik; Keller, Lukas M.; Petrishcheva, Elena; Dresen, Georg

2010-07-01

We synthesize reaction rims between thermodynamically incompatible phases in the system MgO-Al2O3-SiO2 applying uniaxial load using a creep apparatus. Synthesis experiments are done in the MgO-SiO2 and in the MgO-Al2O3 subsystems at temperatures ranging from 1150 to 1350 °C imposing vertical stresses of 1.2 to 29 MPa at ambient pressure and under a constant flow of dry argon. Single crystals of synthetic and natural quartz and forsterite, synthetic periclase and synthetic corundum polycrystals are used as starting materials. We produce enstatite rims at forsterite-quartz contacts, enstatite-forsterite double rims at periclase-quartz contacts and spinel rims at periclase-corundum contacts. We find that rim growth under the “dry” conditions of our experiments is sluggish compared to what has been found previously in nominally “dry” piston cylinder experiments. We further observe that the nature of starting material, synthetic or natural, has a major influence on rim growth rates, where natural samples are more reactive than synthetic ones. At a given temperature the effect of stress variation is larger than what is anticipated from the modification of the thermodynamic driving force for reaction due to the storage of elastic strain energy in the reactant phases. We speculate that this may be due to modification of the physical properties of the polycrystals that constitute the reaction rims or by deformation under the imposed load. In our experiments rim growth is very sluggish at forsterite-quartz interfaces. Rim growth is more rapid at periclase-quartz contacts. The spinel rims that are produced at periclase-corundum interfaces show parabolic growth indicating that reaction rim growth is essentially diffusion controlled. From the analysis of time series done in the MgO-Al2O3 subsystem we derive effective diffusivities for the Al2O3 and the MgO components in a spinel polycrystal as D_{MgO} = 1.4 ± 0.2 \\cdot 10^{-15} m2/s and D_{Al_2O_3} = 3.7 ± 0

Pathways for acceleration of development and commercialization of novel thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Jovovic, Vladimir; Heian, Ellen M.; Harris, Fred R.; Sootsman, Joseph; Kossakovski, Dmitri [ZT Plus, Azusa, CA (United States)

2011-07-01

Efficient and robust thermoelectric (TE) materials are the cornerstone of any future TE generator system implementation. Today, efforts at commercialization of TE materials often lack the rigor and speed necessary for market readiness of any new material. Here we present the requirements for optimizing a thermoelectric material through a defined development process. We discuss the optimization process, tools that assist in rapid evaluation of thermoelectric performance, and the reproducibility of samples when these methods are employed. The results from our case study demonstrate the feasibility of this approach to prepare reproducible commercial quantities of advanced thermoelectric materials. (orig.)

Photoluminescence and thermoluminescence properties of Eu2+ doped and Eu2+ ,Dy3+ co-doped Ba2 MgSi2 O7 phosphors.

Science.gov (United States)

Sao, Sanjay Kumar; Brahme, Nameeta; Bisen, D P; Tiwari, Geetanjali

2016-11-01

In this work, we report the preparation, characterization, comparison and luminescence mechanisms of Eu 2 + -doped and Eu 2 + ,Dy 3 + -co-doped Ba 2 MgSi 2 O 7 (BMSO) phosphors. Prepared phosphors were synthesized via a high temperature solid-state reaction method. All prepared phosphors appeared white. The phase structure, particle size, and elemental analysis were analyzed using X-ray diffraction (XRD), transmission electron microscopy (TEM) and energy-dispersive X-ray (EDX) analysis. The luminescence properties of the phosphors were investigated by thermoluminescence (TL) and photoluminescence (PL). The PL excitation and emission spectra of Ba 2 MgSi 2 O 7 :Eu 2 + showed the peak to be around 381 nm and 490 nm respectively. The PL excitation spectrum of Ba 2 MgSi 2 O 7 :Eu 2 + Dy 3 + showed the peak to be around 341 nm and 388 nm, and the emission spectrum had a broad band around 488 nm. These emissions originated from the 4f 6 5d 1 to 4f 7 transition of Eu 2 + . TL analysis revealed that the maximum TL intensity was found at 5 mol% of Eu 2 + doping in Ba 2 MgSi 2 O 7 phosphors after 15 min of ultraviolet (UV) light exposure. TL intensity was increased when Dy 3 + ions were co-doped in Ba 2 MgSi 2 O 7 :Eu 2 + and maximum TL intensity was observed for 2 mol% of Dy 3 + . TL emission spectra of Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors were found at 500 nm. TL intensity increased with UV exposure time up to 15 min, then decreased for the higher UV radiation dose for both Eu doping and Eu,Dy co-doping. The trap depths were calculated to be 0.54 eV for Ba 1.95 MgSi 2 O 7 :0.05Eu 2 + and 0.54 eV and 0.75 eV for Ba 1.93 MgSi 2 O 7 :0.05Eu 2 + ,0.02Dy 3 + phosphors. It was observed that co-doping with small amounts of Dy 3 + enhanced the thermoluminescence properties of Ba 2 MgSi 2 O 7 phosphor. Copyright © 2016 John Wiley & Sons, Ltd. [Correction added on 5 April 2016, after first online publication: The

Review—Organic Materials for Thermoelectric Energy Generation

KAUST Repository

Cowen, Lewis M.; Atoyo, Jonathan; Carnie, Matthew J.; Baran, Derya; Schroeder, Bob C.

2017-01-01

Organic semiconductor materials have been promising alternatives to their inorganic counterparts in several electronic applications such as solar cells, light emitting diodes, field effect transistors as well as thermoelectric generators. Their low cost, light weight and flexibility make them appealing in future applications such as foldable electronics and wearable circuits using printing techniques. In this report, we present a mini-review on the organic materials that have been used for thermoelectric energy generation.

Review—Organic Materials for Thermoelectric Energy Generation

KAUST Repository

Cowen, Lewis M.

2017-01-29

Organic semiconductor materials have been promising alternatives to their inorganic counterparts in several electronic applications such as solar cells, light emitting diodes, field effect transistors as well as thermoelectric generators. Their low cost, light weight and flexibility make them appealing in future applications such as foldable electronics and wearable circuits using printing techniques. In this report, we present a mini-review on the organic materials that have been used for thermoelectric energy generation.

Enhanced thermoelectric properties of metal film on bismuth telluride-based materials

International Nuclear Information System (INIS)

Chao, Wen Hsuan; Chen, Yi Ray; Tseng, Shih Chun; Yang, Ping Hsing; Wu, Ren Jye; Hwang, Jenn Yeu

2014-01-01

Diffusion barriers have a significant influence on the reliability and life time of thermoelectric modules. Although nickel is commonly used as a diffusion barrier in commercial thermoelectric modules, several studies have verified that Ni migrates to bismuth telluride-based material during high temperature cycles and causes a loss in efficacy. In this paper, the influence of metal layers coated to p-type and n-type Bi 2 Te 3 on the interface characterization and thermoelectric property is studied using a RF magnetron sputtering. The findings from this study demonstrate the structural and thermoelectric properties of p-type and n-type Bi 2 Te 3 coated with different metal layers. The crystalline phase and compositional change of the interface between the Bi 2 Te 3 materials and the metal layers were determined using an X-ray diffractometer and scanning electron microscopy with energy dispersive spectroscopy. Formation of NiTe was observed in the sample of Ni/p-type Bi 2 Te 3 based films post-annealed in an N 2 atmosphere at 200 °C. In contrast, no Co x Te y was formed in the sample of Co/p-type Bi 2 Te 3 based films post-annealed at 200 °C. For as-deposited Ni/p-type and n-type Bi 2 Te 3 based legs, the Ni slightly diffused into the Bi 2 Te 3 based legs. A similar phenomenon also occurred in the as-deposited Co/p-type and n-type Bi 2 Te 3 based legs. The Seebeck coefficients of the Co contacts on the Bi 2 Te 3 based material displayed better behavior than those of the Ni contacts on the Bi 2 Te 3 based legs. Thus Co could be a suitable diffusion barrier for bulk Bi 2 Te 3 based material. The observed effects on the thermoelectric and structural properties of metal/Bi 2 Te 3 based material are crucial for understanding the interface between the diffusion barrier and thermoelectric materials. - Highlights: • Interface characterization of metal coated to p-type and n-type Bi 2 Te 3 is studied. • We examined the phase transformation of metal/Bi 2 Te 3 based films

Ground state properties and thermoelectric behavior of Ru{sub 2}VZ (Z=Si, ge, sn) half-metallic ferromagnetic full-Heusler compounds

Energy Technology Data Exchange (ETDEWEB)

Yalcin, Battal Gazi

2016-06-15

The ground state properties namely structural, mechanical, electronic and magnetic properties and thermoelectric behavior of Ru{sub 2}VZ (Z=Si, Ge and Sn) half-metallic ferromagnetic full-Heusler compounds are systematically investigated. These compounds are ferromagnetic and crystallize in the Heusler type L2{sub 1} structure (prototype: Cu{sub 2}MnAl, Fm-3m 225). This result is confirmed for Ru{sub 2}VSi and Ru{sub 2}VSn by experimental work reported by Yin and Nash using high temperature direct reaction calorimetry. The studied materials are half-metallic ferromagnets with a narrow direct band gap in the minority spin channel that amounts to 31 meV, 66 meV and 14 meV for Ru{sub 2}VSi, Ru{sub 2}VGe, and Ru{sub 2}VSn, respectively. The total spin magnetic moment (M{sub tot}) of the considered compounds satisfies a Slater–Pauling type rule for localized magnetic moment systems (M{sub tot}=(N{sub V}−24)µ{sub B}), where N{sub V}=25 is the number of valence electrons in the primitive cell. The Curie temperature within the random phase approximation (RPA) is found to be 23 K, 126 K and 447 K for Ru{sub 2}VSi, Ru{sub 2}VGe and Ru{sub 2}VSn, respectively. Semi-classical Boltzmann transport theories have been used to obtain thermoelectric constants, such as Seebeck coefficient (S), electrical (σ/τ) and thermal conductivity (κ/τ), power factor (PF) and the Pauli magnetic susceptibility (χ). ZT{sub MAX} values of 0.016 (350 K), 0.033 (380 K) and 0.063 (315 K) are achieved for Ru{sub 2}VSi, Ru{sub 2}VGe and Ru{sub 2}VSn, respectively. It is expected that the obtained results might be a trigger in future experimentally interest in this type of full-Heusler compounds. - Graphical abstract: Temperature dependence of figure of merit for Ru{sub 2}VZ (Z=Si, Ge, and Sn) compounds. - Highlights: • The ground state and thermoelectric properties are reported for the first time. • Ru{sub 2}VZ are found to be a half-metallic ferromagnetic full Heusler compound. • The

Potential thermoelectric performance of hole-doped Cu2O

International Nuclear Information System (INIS)

Chen, Xin; Parker, David; Du, Mao-Hua; Singh, David J

2013-01-01

High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show, based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory in the relaxation time approximation, that hole-doped Cu 2 O may be such a material. We find that hole-doped Cu 2 O has a high thermopower of above 200 μV K −1 even with doping levels as high as 5.2 × 10 20 cm −3 at 500 K, mainly attributed to the heavy valence bands of Cu 2 O. This is reminiscent of the cobaltate family of high-performance oxide thermoelectrics and implies that hole-doped Cu 2 O could be an excellent thermoelectric material if suitably doped. (paper)

Materiales vitrocerámicos del sistema MgO-Al2O3-SiO2 a partir de ceniza de cáscara de arroz

Directory of Open Access Journals (Sweden)

Romero, M.

2011-08-01

Full Text Available This wok shows the results of a valorisation study to use rice husk ash as raw material to develop glass-ceramic materials. An original glass has been formulated in the base system MgO-Al2O3-SiO2 with addition of B2O3 and Na2O to facilitate the melting and poring processes. Glass characterization was carried out by determining its chemical composition. Sintering behaviour has been examined by Hot Stage Microscopy (HSM. Thermal stability and crystallization mechanism have been studied by Differential Thermal Analysis (DTA. Mineralogy analyses of the glass-ceramic materials were carried out using X-ray Diffraction (XRD. Results show that it is possible to use ash rice husk to produce glass-ceramic materials by a sintercrystallization process, with nepheline (Na2O·Al2O3 · SiO2 as major crystalline phase in the temperature interval 700-950ºC and forsterite (2MgO·SiO2 at temperatures above 950ºC.En este trabajo se muestran los resultados de un estudio de valorización de la ceniza de cáscara de arroz como materia prima en la obtención de materiales vitrocerámicos. Se ha formulado un vidrio en el sistema base MgO-Al2O3-SiO2 incorporando B2O3 y Na2O para facilitar los procesos de fusión y colado del vidrio. El vidrio se ha caracterizado mediante la determinación de su composición química. Su comportamiento frente a la sinterización se ha llevado a cabo mediante Microscopía de Calefacción (MC. La estabilidad térmica de las muestras y el mecanismo de cristalización preferente se ha estudiado mediante Análisis Térmico Diferencial (ATD. La mineralogía de los materiales vitrocerámicos se ha llevado a cabo por Difracción de rayos-X (DRX. Los resultados obtenidos muestran que es posible utilizar ceniza de cáscara de arroz para producir materiales vitrocerámicos mediante un proceso de sinterización seguido de cristalización, con nefelina (Na2O·Al2O3·2SiO2 como fase cristalina mayoritaria en el intervalo de temperatura 700º-950ºC y

Influence of spray forming process parameters on the microstructure and porosity of Mg{sub 2}Si rich aluminum alloys

Energy Technology Data Exchange (ETDEWEB)

Stelling, O.; Hehl, A. von [Foundation Institute for Material Science, Bremen (Germany); Uhlenwinkel, V. [University of Bremen, FB4 FG01 Department Process and Chemcial Engineering, Bremen (Germany); Krug, P. [PEAK Werkstoff GmbH, Velbert (Germany); Ellendt, N.

2010-07-15

Due to high cooling rates spray forming is an appropriate process to produce aluminum alloys with a high content of Mg{sub 2}Si. Compared to common casting processes, a fine microstructure can be achieved yielding in improved mechanical properties. In this work, billets were spray formed from the two alloys AlMg15Si8Cu2 (22 mass-% Mg{sub 2}Si) and AlMg20.5Si11Cu2 (30 mass-% Mg{sub 2}Si) under different spraying conditions. The analysis of the microstructure showed that the size of Mg{sub 2}Si dispersoids is very sensitive to process parameters. Besides the well known thermal effects of melt superheat (carried out from -40 K to +170 K) and GMR (varied from 2.0 to 6.3) a strong influence of the scanning frequency of the atomizer nozzle (7 Hz and 15 Hz) could be observed. Similar effects could be found for the occurrence of porosity. A new parameter, the enthalpy flow to gas flow ratio (EGR), was defined from these two parameters of which correlations of Mg{sub 2}Si dispersoid size and amount of porosity were found. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Nano-Micro Materials Enabled Thermoelectricity From Window Glasses

KAUST Repository

Inayat, Salman Bin

2012-01-01

of individual glass strips to form the thickness depth of the glass on subsequent curing of the strips, and c) embedding nano-manufactured thermoelectric pillars, have been implemented for innovative integration of thermoelectric materials into window glasses

AlSi17Cu5Mg alloy as future material for castings of pistons for internal combustion engines

Directory of Open Access Journals (Sweden)

J. Piątkowski

2015-07-01

Full Text Available The paper presents chosen properties and microstructure of AlSi17Cu5Mg alloy as future material for casting pistons in automotive industry. Tests were conducted to elaborate technology of preparation, assessment of crystallisation parameters and shaping the primary structure of the silumin with the aim to improve the working parameters and the functioning efficiency in cylinder-piston system. Refinement of Si crystals, achieved due to overheating above the temperature Tliq. causes that the alloy reaches satisfactory properties in working chamber of the engine are optimised. Such condition of material characteristics causes that hypereutectic silumins, for chosen applications in transport, may serve as an alternative to Al - Si alloys of hypoeutectic and near - eutectic type.

Spark plasma sintered bismuth telluride-based thermoelectric materials incorporating dispersed boron carbide

Energy Technology Data Exchange (ETDEWEB)

Williams, H.R., E-mail: hugo.williams@leicester.ac.uk [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ambrosi, R.M. [Space Research Centre, Department of Physics and Astronomy, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Chen, K. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Friedman, U. [Department of Engineering, University of Leicester, University Road, Leicester LE1 7RH (United Kingdom); Ning, H.; Reece, M.J. [School of Engineering and Materials Science, Queen Mary, University of London, Mile End Road, London E1 4NS (United Kingdom); Robbins, M.C.; Simpson, K. [European Thermodynamics Ltd., 8 Priory Business Park, Wistow Road, Kibworth LE8 0R (United Kingdom); Stephenson, K. [European Space Agency, ESTEC TEC-EP, Keplerlaan 1, 2201AZ Noordwijk (Netherlands)

2015-03-25

Highlights: • Nano-B{sub 4}C reinforced Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} p-type thermoelectric produced by SPS. • Addition of B{sub 4}C up to 0.2 vol% to SPS’d material has little effect on zT. • Vickers hardness improved by 27% by adding 0.2 vol% B{sub 4}C. • Fracture toughness of SPS material: K{sub IC} = 0.80 MPa m{sup 1/2} by SEVNB. • Mechanical properties much better than commercial directionally solidified material. - Abstract: The mechanical properties of bismuth telluride based thermoelectric materials have received much less attention in the literature than their thermoelectric properties. Polycrystalline p-type Bi{sub 0.5}Sb{sub 1.5}Te{sub 3} materials were produced from powder using spark plasma sintering (SPS). The effects of nano-B{sub 4}C addition on the thermoelectric performance, Vickers hardness and fracture toughness were measured. Addition of 0.2 vol% B{sub 4}C was found to have little effect on zT but increased hardness by approximately 27% when compared to polycrystalline material without B{sub 4}C. The K{sub IC} fracture toughness of these compositions was measured as 0.80 MPa m{sup 1/2} by Single-Edge V-Notched Beam (SEVNB). The machinability of polycrystalline materials produced by SPS was significantly better than commercially available directionally solidified materials because the latter is limited by cleavage along the crystallographic plane parallel to the direction of solidification.

MgB sub 2 superconductor: a review

CERN Document Server

Mollah, S; Chaudhuri, B K

2003-01-01

Synthesis, structure and properties of the most intensively studied newly discovered intermetallic binary superconductor MgB sub 2 have been reviewed up to October, 2002. It has a hexagonal unit cell with cell parameters a approx 3.1432 A and c approx 3.5193 A. MgB sub 2 bulk samples synthesized under high pressure (approx 3.5 GPa) and high temperature (approx 1000 degC) has density approx 2.63 g/cm sup 3. The normal state carriers of MgB sub 2 are holes which have been established from the positive thermoelectric power and Hall coefficient measurements. The external pressure decreases the critical temperature (T sub c) with dT sub c /dP in the range of -1 to -2 K/GPa. The T sub c decreases rapidly by the doping of Mn, Li, Co, C, Al, Ni and Fe but increases slightly by Zn doping. However, no significant change of T sub c is observed by the doping of Si and Be. It is further noticed that the anisotropic ratio gamma(= H sub c sub 2 sup a sup b /H sub c sub 2 sup c) approx 1-5 with lower critical field (H sub c ...

High performance p-type half-Heusler thermoelectric materials

Science.gov (United States)

Yu, Junjie; Xia, Kaiyang; Zhao, Xinbing; Zhu, Tiejun

2018-03-01

Half-Heusler compounds, which possess robust mechanical strength, good high temperature thermal stability and multifaceted physical properties, have been verified as a class of promising thermoelectric materials. During the last two decades, great progress has been made in half-Heusler thermoelectrics. In this review, we summarize some representative work of p-type half-Heusler materials, the thermoelectric performance of which has been remarkably enhanced in recent years. We introduce the features of the crystal and electronic structures of half-Heusler compounds, and successful strategies for optimizing electrical and thermal transport in the p-type RFeSb (R  =  V, Nb, Ta) and MCoSb (M  =  Ti, Zr, Hf) based systems, including band engineering, the formation of solid solutions and hierarchical phonon scattering. The outlook for future research directions of half-Heusler thermoelectrics is also presented.

Advances in thermoelectric materials research: Looking back and moving forward.

Science.gov (United States)

He, Jian; Tritt, Terry M

2017-09-29

High-performance thermoelectric materials lie at the heart of thermoelectrics, the simplest technology applicable to direct thermal-to-electrical energy conversion. In its recent 60-year history, the field of thermoelectric materials research has stalled several times, but each time it was rejuvenated by new paradigms. This article reviews several potentially paradigm-changing mechanisms enabled by defects, size effects, critical phenomena, anharmonicity, and the spin degree of freedom. These mechanisms decouple the otherwise adversely interdependent physical quantities toward higher material performance. We also briefly discuss a number of promising materials, advanced material synthesis and preparation techniques, and new opportunities. The renewable energy landscape will be reshaped if the current trend in thermoelectric materials research is sustained into the foreseeable future. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Advanced Thermoelectric Materials for Efficient Waste Heat Recovery in Process Industries

Energy Technology Data Exchange (ETDEWEB)

Adam Polcyn; Moe Khaleel

2009-01-06

The overall objective of the project was to integrate advanced thermoelectric materials into a power generation device that could convert waste heat from an industrial process to electricity with an efficiency approaching 20%. Advanced thermoelectric materials were developed with figure-of-merit ZT of 1.5 at 275 degrees C. These materials were not successfully integrated into a power generation device. However, waste heat recovery was demonstrated from an industrial process (the combustion exhaust gas stream of an oxyfuel-fired flat glass melting furnace) using a commercially available (5% efficiency) thermoelectric generator coupled to a heat pipe. It was concluded that significant improvements both in thermoelectric material figure-of-merit and in cost-effective methods for capturing heat would be required to make thermoelectric waste heat recovery viable for widespread industrial application.

Thin films of thermoelectric compound Mg2Sn deposited by co-sputtering assisted by multi-dipolar microwave plasma

International Nuclear Information System (INIS)

Le-Quoc, H.; Lacoste, A.; Hlil, E.K.; Bes, A.; Vinh, T. Tan; Fruchart, D.; Skryabina, N.

2011-01-01

Highlights: → Mg 2 Sn thin films deposited by plasma co-sputtering, on silicon and glass substrates. → Formation of nano-grained polycrystalline films on substrates at room temperature. → Structural properties vary with target biasing and target-substrate distance. → Formation of the hexagonal phase of Mg 2 Sn in certain deposition conditions. → Power factor ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn films doped with ∼1 at.% Ag. - Abstract: Magnesium stannide (Mg 2 Sn) thin films doped with Ag intended for thermoelectric applications are deposited on both silicon and glass substrates at room temperature by plasma assisted co-sputtering. Characterization by scanning electron microscopy, energy-dispersive X-ray spectroscopy and X-ray diffraction confirms the formation of fine-grained polycrystalline thin films with thickness of 1-3 μm. Stoichiometry, microstructure and crystal structure of thin films are found to vary with target biasing and the distance from targets to substrate. Measurements of electrical resistivity and Seebeck coefficient at room temperature show the maximum power factor of ∼5.0 x 10 -3 W K -2 m -1 for stoichiometric Mg 2 Sn thin films doped with ∼1 at.% Ag.

First-Principles Calculations of Electronic, Optical, and Transport Properties of Materials for Energy Applications

Science.gov (United States)

Shi, Guangsha

theoretical upper limit of the figure of merit. I also determined the electronic structures and thermoelectric properties of Mg2Si, Mg2Ge, and Mg2Sn, a family of Earth-abundant thermoelectric compounds. I uncovered the importance of quasiparticle corrections and the proper treatment of pseudopotentials in the determination of the band gaps and the thermoelectric transport properties at high temperatures. The methods and codes I developed in my research form a general predictive toolbox for the design and optimization of the functional properties of materials for energy applications.

Phase formation in Mg-Sn-Si and Mg-Sn-Si-Ca alloys

Energy Technology Data Exchange (ETDEWEB)

Kozlov, A.; Groebner, J. [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany); Schmid-Fetzer, R., E-mail: schmid-fetzer@tu-clausthal.de [Institute of Metallurgy, Clausthal University of Technology, Robert-Koch-Str. 42, D-38678 Clausthal-Zellerfeld (Germany)

2011-02-17

Research highlights: > The solidification paths of ternary and quaternary alloys are analyzed in detail, using the tool of thermodynamic calculations. > The precipitation sequence of phases and their amounts compare well with the microstructure of alloys. > The most efficient comparison to the experimental thermal analysis data is done by calculation of the enthalpy variation with temperature. > The viability of a procedure for the selection of multicomponent key samples is demonstrated for the development of the Mg-Ca-Si-Sn phase diagram. - Abstract: Experimental work is done and combined with the Calphad method to generate a consistent thermodynamic description of the Mg-Ca-Si-Sn quaternary system, validated for Mg-rich alloys. The viability of a procedure for the selection of multicomponent key samples is demonstrated for this multicomponent system. Dedicated thermal analysis with DTA/DSC on sealed samples is performed and the microstructure of slowly solidified alloys is analyzed using SEM/EDX. The thermodynamic description and phase diagram of the ternary Mg-Si-Sn system, developed in detail also in this work, deviates significantly from a previous literature proposal. The phase formation in ternary and quaternary alloys is analyzed using the tool of thermodynamic equilibrium and Scheil calculations for the solidification paths and compared with present experimental data. The significant ternary/quaternary solid solubilities of pertinent intermetallic phases are quantitatively introduced in the quaternary Mg-Ca-Si-Sn phase diagram and validated by experimental data.

Alternative route for the preparation of CoSb3 and Mg2Si derivatives

International Nuclear Information System (INIS)

Godlewska, E.; Mars, K.; Zawadzka, K.

2012-01-01

An alternative manufacturing route has been developed for cobalt triantimonide and magnesium disilicide derivatives. Elemental powders were mixed in stoichiometric proportions, cold pressed into cylindrical preforms and heated in oxygen-free environment to initiate the exothermic reaction. According to DTA/TG measurements and observations under high-temperature microscope, the onset of reaction occurred at a temperature not exceeding the melting point of the more volatile component, i.e. antimony in the case of CoSb 3 and magnesium in the case of Mg 2 Si. The reaction products were additionally heat treated to secure homogenization. Dense sinters were obtained by hot uniaxial pressing of the obtained powders in moderate temperature-and-pressure conditions. Several advantages were identified in the proposed technology: absence of liquid phases, relatively short time of the synthesis, possibility of in-situ or ex-situ doping and grain size control. - Graphical abstract: (1) Manufacturing flow sheet for CoSb 3 (milling included) and Mg 2 Si (no milling). (2) Micrographs of CoSb 3 product. (3) Micrographs of Mg 2 Si product. Highlights: ► The combustion synthesis followed by HP was used for the manufacturing of CoSb 3 or Mg 2 Si. ► The time of reaction is shorter compared with many other synthesis methods. ► The process is scalable and practically wasteless.

Microstructure and mechanical properties of diffusion bonded Al/Mg2Si metal matrix in situ composite

International Nuclear Information System (INIS)

Nami, H.; Halvaee, A.; Adgi, H.; Hadian, A.

2010-01-01

In this research, Al/Mg 2 Si composite produced by gravity casting, was joined by diffusion welding technique at 6 MPa pressure with various welding temperatures and durations. This metal matrix composite (MMC) containing 15% Mg 2 Si particles was produced by in situ technique. Specific diffusion bonding process was introduced as a low vacuum technique. Microstructure and shear strength of the joined areas were determined. Scanning electron microscopy examination was carried out on the welded interfaces and shear tests were conducted to the samples interface to find out the effect of welding temperatures and durations on the weldability. It was found that high welding temperatures resulted in increase of shear strength. However, increase in welding duration did not make any detectable changes. The bonded interface could be developed as a wavy state depending on the amount of parent material deformation that was associated with bonding temperature. Results indicated that MMC can be joined by diffusion welding technique successfully with satisfactory shear strength.

Synthesis and optical properties of red/blue-emitting Sr2MgSi2O7:Eu3+/Eu2+ phosphors for white LED

Directory of Open Access Journals (Sweden)

Tong Thi Hao Tam

2016-06-01

Full Text Available Phosphor-converted white light emitting diodes (white LEDs have received great attention in recent years since they have several excellent features such as high lumen output, low power consumption, long lifetime and environmentally friendly. In this work, we report the co-precipitation synthesis of red/blue Sr2MgSi2O7:Eu3+/Eu2+ phosphors with various Eu doping concentration. The results show that the obtained Sr2MgSi2O7:Eu3+/Eu2+ phosphors have good crystallinity and emit strong red (Sr2MgSi2O7:Eu3+ and blue (Sr2MgSi2O7:Eu2+ emissions under near UV light excitation. The sharp emission peaks at 577, 590, 612, 653, and 701 nm corresponded to the typical 5D0 → 7Fj (j = 0,1,2,3,4 transitions of Eu3+, and the blue emission peaking at 460 nm is attributed to the typical 4f65d1-4f7 transition of Eu2+ in the same Sr2MgSi2O7 host lattice. Both phosphors can be well excited in the wavelength range of 260–400 nm where the near UV-LED is well matched. The above results suggest that the Sr2MgSi2O7:Eu3+/Eu2+ phosphors are promising red/blue-emitting phosphors for the application in near UV pumped phosphor-converted white LEDs.

Nano SiO2 and MgO Improve the Properties of Porous β-TCP Scaffolds via Advanced Manufacturing Technology

Directory of Open Access Journals (Sweden)

Chengde Gao

2015-03-01

Full Text Available Nano SiO2 and MgO particles were incorporated into β-tricalcium phosphate (β-TCP scaffolds to improve the mechanical and biological properties. The porous cylindrical β-TCP scaffolds doped with 0.5 wt % SiO2, 1.0 wt % MgO, 0.5 wt % SiO2 + 1.0 wt % MgO were fabricated via selective laser sintering respectively and undoped β-TCP scaffold was also prepared as control. The phase composition and mechanical strength of the scaffolds were evaluated. X-ray diffraction analysis indicated that the phase transformation from β-TCP to α-TCP was inhibited after the addition of MgO. The compressive strength of scaffold was improved from 3.12 ± 0.36 MPa (β-TCP to 5.74 ± 0.62 MPa (β-TCP/SiO2, 9.02 ± 0.55 MPa (β-TCP/MgO and 10.43 ± 0.28 MPa (β-TCP/SiO2/MgO, respectively. The weight loss and apatite-forming ability of the scaffolds were evaluated by soaking them in simulated body fluid. The results demonstrated that both SiO2 and MgO dopings slowed down the degradation rate and improved the bioactivity of β-TCP scaffolds. In vitro cell culture studies indicated that SiO2 and MgO dopings facilitated cell attachment and proliferation. Combined addition of SiO2 and MgO were found optimal in enhancing both the mechanical and biological properties of β-TCP scaffold.

Melting relations in the MgO-MgSiO3 system up to 70 GPa

Science.gov (United States)

Ohnishi, Satoka; Kuwayama, Yasuhiro; Inoue, Toru

2017-06-01

Melting experiments in a binary system MgO-MgSiO3 were performed up to 70 GPa using a CO2 laser heated diamond anvil cell. The quenched samples were polished and analyzed by a dualbeam focused ion beam (FIB) and a field emission scanning electron microscope (FE-SEM), respectively. The liquidus phase and the eutectic composition were determined on the basis of textual and chemical analyses of sample cross sections. Our experimental results show that the eutectic composition is the Si/Mg molar ratio of 0.76 at 35 GPa and it decreases with increasing pressure. Above 45 GPa, it becomes relatively constant at about 0.64-0.65 Si/Mg molar ratio. Using our experimental data collected at a wide pressure range up to 70 GPa together with previous experimental data, we have constructed a thermodynamic model of the eutectic composition of the MgO-MgSiO3 system. The eutectic composition extrapolated to the pressure and temperature conditions at the base of the mantle is about 0.64 Si/Mg molar ratio. The modeled eutectic composition is quite consistent with a previous prediction from ab initio calculations (de Koker et al. in Earth Planet Sci Lett 361:58-63, 2013), suggesting that the simple assumption of a non-ideal regular solution model can well describe the melting relation of the MgO-MgSiO3 system at high pressure. Our results show that the liquidus phase changes from MgO-periclase to MgSiO3-bridgmanite at 35 GPa for the simplified pyrolite composition ( 0.7 Si/Mg molar ratio), while MgSiO3-bridgmanite is the liquidus phase at the entire lower mantle conditions for the chondritic composition ( 0.84 Si/Mg molar ratio).

Thermoelectric transport in rare-earth compounds

International Nuclear Information System (INIS)

Koehler, Ulrike

2007-01-01

This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce 3 Rh 4 Sn 13 are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu 1-x Yb x Rh 2 Si 2 and Ce x La 1-x Ni 2 Ge 2 by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo

2016-12-28

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post-annealing temperatures were studied to determine the thermal stability of each contact metal. The specific contact resistivity (SCR) was determined using the Cross Bridge Kelvin Resistor (CBKR) method. Ni contacts exhibits the best thermal stability, maintaining stability up to 400 °C, with a SCR of approximately 10−2 Ω-cm2 after annealing. The increased SCR after high temperature annealing is correlated with the formation of a Mg-Si-Ni mixture identified by cross-sectional scanning transmission electron microscopy (STEM) characterization, X-ray diffraction characterization (XRD) and other elemental analyses. The formation of this Mg-Si-Ni mixture is attributed to Ni diffusion and its reaction with the Mg2Si film.

Cooperative doping effects of Ti and nano-SiC on transport critical current density and grain connectivity of in situ MgB{sub 2} tapes

Energy Technology Data Exchange (ETDEWEB)

Pan, X.F., E-mail: PAN.Xifeng@nims.go.jp [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan)] [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China); Matsumoto, A.; Kumakura, H. [National Institute for Materials Science, Superconducting Materials Research Center, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047 (Japan); Cheng, C.H.; Zhao, Y. [Key Laboratory of Magnetic Levitation and Maglev Trains (Ministry of Education of China), Superconductivity R and D Center (SRDC), Southwest Jiaotong University, Chengdu 610031 (China)] [School of Materials Science and Engineering, University of New South Wales, Sydney 2052, NSW (Australia)

2011-11-15

We studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} tape. Ti doping significantly weakens the current dependence of T{sub c} of MgB{sub 2} tapes at self-field, and does not change T{sub c} or slightly increases T{sub c}. Further Ti adding can enhance in-field J{sub c} performance of SiC doped MgB{sub 2} tapes by a factor of 50-100% at 4.2 K and 10 T. Ti addition improves the J{sub c} performance of undoped and SiC doped MgB{sub 2} by modifying their grains connection. By now, nano-SiC powder (20-30 nm) is still the most effective additive for improving upper critical field and critical current density of MgB{sub 2}-based superconducting materials. However, some decomposed carbon aggregates at grain boundaries and results in serious weak-links of MgB{sub 2} grains, and these weak-links limit the further improvement of critical current density, J{sub c} of MgB{sub 2}, especially at lower fields. Ti doping is reported to increase the compactness of MgB{sub 2}, and modify its intergranular coupling by forming ultrathin TiB{sub 2} layer at grain boundaries. In this work, we studied the cooperative doping effects of Ti and nano-SiC on transport J{sub c} and grain connectivity of MgB{sub 2} and the possibility to improve transport J{sub c} of SiC doped MgB{sub 2} by introducing Ti additive. The results suggest the Ti addition can obviously improve J{sub c} of MgB{sub 2} at lower fields and also enhance the J{sub c} of SiC doped MgB{sub 2} by improving their grain connectivity which shows serious intergranular weak-links.

Nano-materials Enabled Thermoelectricity from Window Glasses

KAUST Repository

Inayat, Salman Bin

2012-11-13

With a projection of nearly doubling up the world population by 2050, we need wide variety of renewable and clean energy sources to meet the increased energy demand. Solar energy is considered as the leading promising alternate energy source with the pertinent challenge of off sunshine period and uneven worldwide distribution of usable sun light. Although thermoelectricity is considered as a reasonable renewable energy from wasted heat, its mass scale usage is yet to be developed. Here we show, large scale integration of nano-manufactured pellets of thermoelectric nano-materials, embedded into window glasses to generate thermoelectricity using the temperature difference between hot outside and cool inside. For the first time, this work offers an opportunity to potentially generate 304 watts of usable power from 9 m2 window at a 206C temperature gradient. If a natural temperature gradient exists, this can serve as a sustainable energy source for green building technology.

Nanostructured Thermoelectric Oxides for Energy Harvesting Applications

KAUST Repository

Abutaha, Anas I.

2015-11-24

As the world strives to adapt to the increasing demand for electrical power, sustainable energy sources are attracting significant interest. Around 60% of energy utilized in the world is wasted as heat. Different industrial processes, home heating, and exhausts in cars, all generate a huge amount of unused waste heat. With such a huge potential, there is also significant interest in discovering inexpensive technologies for power generation from waste heat. As a result, thermoelectric materials have become important for many renewable energy research programs. While significant advancements have been done in improving the thermoelectric properties of the conventional heavy-element based materials (such as Bi2Te3 and PbTe), high-temperature applications of thermoelectrics are still limited to one materials system, namely SiGe, since the traditional thermoelectric materials degrade and oxidize at high temperature. Therefore, oxide thermoelectrics emerge as a promising class of materials since they can operate athigher temperatures and in harsher environments compared to non-oxide thermoelectrics. Furthermore, oxides are abundant and friendly to the environment. Among oxides, crystalline SrTiO3 and ZnO are promising thermoelectric materials. The main objective of this work is therefore to pursue focused investigations of SrTiO3 and ZnO thin films and superlattices grown by pulsed laser deposition (PLD), with the goal of optimizing their thermoelectric properties by following different strategies. First, the effect of laser fluence on the thermoelectric properties of La doped epitaxial SrTiO3 films is discussed. Films grown at higher laser fluences exhibit better thermoelectric performance. Second, the role of crystal orientation in determining the thermoelectric properties of epitaxial Al doped ZnO (AZO) films is explained. Vertically aligned (c-axis) AZO films have superior thermoelectric properties compared to other films with different crystal orientations. Third

Stability of the Al/TiB2 interface and doping effects of Mg/Si

Science.gov (United States)

Deng, Chao; Xu, Ben; Wu, Ping; Li, Qiulin

2017-12-01

The Al/TiB2 interface is of significant importance in controlling the mechanical properties of Al-B4C composites and tuning the heterogeneous nucleation of Al/Si alloys in industry. Its stability and bonding conditions are critical for both purposes. In this paper, the interfacial energies were investigated by first-principles calculations, and the results support the reported grain refinement mechanisms in Al/Si alloys. Moreover, to improve the mechanical properties of the interface, Mg and Si were doped at the interface, and our simulations show that the two interfaces will both weaken after doping Mg/Si, thus the formation of TiB2 is inhibited. As a result, the processability of the Al-B4C composites may be improved. Our results provide a theoretical basis and guidance for practical applications.

Magnetotransport properties of c-axis oriented La0.7Sr0.3MnO3 thin films on MgO-buffered SiO2/Si substrates

International Nuclear Information System (INIS)

Kang, Young-Min; Ulyanov, Alexander N.; Shin, Geo-Myung; Lee, Sung-Yun; Yoo, Dae-Gil; Yoo, Sang-Im

2009-01-01

c-axis oriented La 0.7 Sr 0.3 MnO 3 (LSMO) films on MgO-buffered SiO 2 /Si substrates were prepared, and their texture, microstructure, and magnetotransport properties were studied and compared to epitaxial LSMO/MgO (001) and polycrystalline LSMO/SiO 2 /Si films. c-axis oriented MgO buffer layers were obtained on amorphous SiO 2 layer through rf sputter deposition at low substrate temperature and consequent postannealing processes. In situ pulsed laser deposition-grown LSMO films, deposited on the MgO layer, show strong c-axis texture, but no in-plane texture. The c-axis oriented LSMO films which are magnetically softer than LSMO/SiO 2 /Si films exhibit relatively large low field magnetoresistance (LFMR) and sharper MR drop at lower field. The large LFMR is attributed to a spin-dependent scattering of transport current at the grain boundaries

Molecular dynamics simulations of the lattice thermal conductivity of thermoelectric material CuInTe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Wei, J. [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Department of Mechanical and Biomedical Engineering, City University of Hong Kong, Kowloon Tong (Hong Kong); Liu, H.J., E-mail: phlhj@whu.edu.cn [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China); Cheng, L.; Zhang, J.; Jiang, P.H.; Liang, J.H.; Fan, D.D.; Shi, J. [Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072 (China)

2017-05-10

Highlights: • A simple but effective Morse potential is constructed to accurately describe the interatomic interactions of CuInTe{sub 2}. • The lattice thermal conductivity of CuInTe{sub 2} predicted by MD agrees well with those measured experimentally, as well as those calculated from phonon BTE. • Introducing Cd impurity or Cu vacancy can effectively reduce the lattice thermal conductivity of CuInTe{sub 2} and thus further enhance its thermoelectric performance. - Abstract: The lattice thermal conductivity of thermoelectric material CuInTe{sub 2} is predicted using classical molecular dynamics simulations, where a simple but effective Morse-type interatomic potential is constructed by fitting first-principles total energy calculations. In a broad temperature range from 300 to 900 K, our simulated results agree well with those measured experimentally, as well as those obtained from phonon Boltzmann transport equation. By introducing the Cd impurity or Cu vacancy, the thermal conductivity of CuInTe{sub 2} can be effectively reduced to further enhance the thermoelectric performance of this chalcopyrite compound.

Aluminum Matrix Composite (AlSi7Mg2Sr0.03/SiCp) Pistons Obtained by Mechanical Mixing Method

Science.gov (United States)

2017-01-01

Metal matrix composites are undoubtedly a group of advanced engineering materials. Compared to unreinforced matrix material, they are characterized by increased strength, greater stiffness, increased wear resistance, better mechanical properties and dimensional stability at elevated temperatures as well as lower density. Due to its very favorable tribological properties for many years research has been conducted on the application of MMC in friction node. The article presents important technological aspects related to the production and properties of composite pistons. Under industrial conditions, a composite suspension (AlSi7Mg2Sr0.03/SiCp 10 vol %) was prepared to allow casting of the semi-finished pistons series. Machining parameters of the working surfaces of the piston were selected on the basis of the turning test made on PCD, PCNM and uncoated carbide tools. The tribological properties of the composite pistons were determined on the basis of the pin-on-disc and the abrasion wear. The scuffing tests carried out under real operating conditions have confirmed the possibility of using composite pistons in air compressors. PMID:29283419

Aluminum Matrix Composite (AlSi7Mg2Sr0.03/SiCp Pistons Obtained by Mechanical Mixing Method

Directory of Open Access Journals (Sweden)

Maciej Dyzia

2017-12-01

Full Text Available Metal matrix composites are undoubtedly a group of advanced engineering materials. Compared to unreinforced matrix material, they are characterized by increased strength, greater stiffness, increased wear resistance, better mechanical properties and dimensional stability at elevated temperatures as well as lower density. Due to its very favorable tribological properties for many years research has been conducted on the application of MMC in friction node. The article presents important technological aspects related to the production and properties of composite pistons. Under industrial conditions, a composite suspension (AlSi7Mg2Sr0.03/SiCp 10 vol % was prepared to allow casting of the semi-finished pistons series. Machining parameters of the working surfaces of the piston were selected on the basis of the turning test made on PCD, PCNM and uncoated carbide tools. The tribological properties of the composite pistons were determined on the basis of the pin-on-disc and the abrasion wear. The scuffing tests carried out under real operating conditions have confirmed the possibility of using composite pistons in air compressors.

Modeling of interface roughness in thermoelectric composite materials

International Nuclear Information System (INIS)

Gather, F; Heiliger, C; Klar, P J

2011-01-01

We use a network model to calculate the influence of the mesoscopic interface structure on the thermoelectric properties of superlattice structures consisting of alternating layers of materials A and B. The thermoelectric figure of merit of such a composite material depends on the layer thickness, if interface resistances are accounted for, and can be increased by proper interface design. In general, interface roughness reduces the figure of merit, again compared to the case of ideal interfaces. However, the strength of this reduction depends strongly on the type of interface roughness. Smooth atomic surface diffusion leading to alloying of materials A and B causes the largest reduction of the figure of merit. Consequently, in real structures, it is important not only to minimize interface roughness, but also to control the type of roughness. Although the microscopic effects of interfaces are only empirically accounted for, using a network model can yield useful information about the dependence of the macroscopic transport coefficients on the mesoscopic disorder in structured thermoelectric materials.

The Effectiveness of Al-Si Coatings for Preventing Interfacial Reaction in Al-Mg Dissimilar Metal Welding

Science.gov (United States)

Wang, Yin; Al-Zubaidy, Basem; Prangnell, Philip B.

2018-01-01

The dissimilar welding of aluminum to magnesium is challenging because of the rapid formation of brittle intermetallic compounds (IMC) at the weld interface. An Al-Si coating interlayer was selected to address this problem, based on thermodynamic calculations which predicted that silicon would change the reaction path to avoid formation of the normally observed binary Al-Mg IMC phases ( β-Al3Mg2 and γ-Al12Mg17). Long-term static heat treatments confirmed that a Si-rich coating will preferentially produce the Mg2Si phase in competition with the less stable, β-Al3Mg2 and γ-Al12Mg17 binary IMC phases, and this reduced the overall reaction layer thickness. However, when an Al-Si clad sheet was tested in a real welding scenario, using the Refill™ friction stir spot welding (FSSW) technique, Mg2Si was only produced in very small amounts owing to the much shorter reaction time. Surprisingly, the coating still led to a significant reduction in the IMC reaction layer thickness and the welds exhibited enhanced mechanical performance, with improved strength and fracture energy. This beneficial behavior has been attributed to the softer coating material both reducing the welding temperature and giving rise to the incorporation of Si particles into the reaction layer, which toughened the brittle interfacial IMC phases during crack propagation.

High Temperature Thermoelectric Properties of ZnO Based Materials

DEFF Research Database (Denmark)

Han, Li

of the dopants and dopant concentrations, a large power factor was obtainable. The sample with the composition of Zn0.9Cd0.1Sc0.01O obtained the highest zT ∼0.3 @1173 K, ~0.24 @1073K, and a good average zT which is better than the state-of-the-art n-type thermoelectric oxide materials. Meanwhile, Sc-doped Zn......This thesis investigated the high temperature thermoelectric properties of ZnO based materials. The investigation first focused on the doping mechanisms of Al-doped ZnO, and then the influence of spark plasma sintering conditions on the thermoelectric properties of Al, Ga-dually doped Zn......O. Following that, the nanostructuring effect for Al-doped ZnO was systematically investigated using samples with different microstructure morphologies. At last, the newly developed ZnCdO materials with superior thermoelectric properties and thermal stability were introduced as promising substitutions...

Scientific and Technical Challenges in Thermal Transport and Thermoelectric Materials and Devices

KAUST Repository

O'Dwyer, Colm

2017-01-19

This paper considers the state-of-the-art and open scientific and technological questions in thermoelectric materials and devices, from phonon engineering and scattering methods, to new and complex materials and their thermoelectric behavior. The paper also describes recent approaches to create structural and compositional material systems designed to enhance the thermoelectric figure of merit and power factors. We also summarize and contextualize recent advances in the use of superlattice structures and porosity or roughness to influence phonon scattering mechanisms and detail some advances in integrated thermoelectric materials for generators and coolers for thermally stable photonic devices.

Scientific and Technical Challenges in Thermal Transport and Thermoelectric Materials and Devices

KAUST Repository

O'Dwyer, Colm; Chen, Renkun; He, Jr-Hau; Lee, Jaeho; Razeeb, Kafil M.

2017-01-01

This paper considers the state-of-the-art and open scientific and technological questions in thermoelectric materials and devices, from phonon engineering and scattering methods, to new and complex materials and their thermoelectric behavior. The paper also describes recent approaches to create structural and compositional material systems designed to enhance the thermoelectric figure of merit and power factors. We also summarize and contextualize recent advances in the use of superlattice structures and porosity or roughness to influence phonon scattering mechanisms and detail some advances in integrated thermoelectric materials for generators and coolers for thermally stable photonic devices.

Wear behavioral study of as cast and 7 hr homogenized Al25Mg2Si2Cu4Ni alloy at constant load

Science.gov (United States)

Harlapur, M. D.; Sondur, D. G.; Akkimardi, V. G.; Mallapur, D. G.

2018-04-01

In the current study, the wear behavior of as cast and 7 hr homogenized Al25Mg2Si2Cu4Ni alloy has been investigated. Microstructure, SEM and EDS results confirm the presence of different intermetallic and their effects on wear properties of Al25Mg2Si2Cu4Ni alloy in as cast as well as aged condition. Alloying main elements like Si, Cu, Mg and Ni partly dissolve in the primary α-Al matrix and to some amount present in the form of intermetallic phases. SEM structure of as cast alloy shows blocks of Mg2Si which is at random distributed in the aluminium matrix. Precipitates of Al2Cu in the form of Chinese script are also observed. Also `Q' phase (Al-Si-Cu-Mg) be distributed uniformly into the aluminium matrix. Few coarsened platelets of Ni are seen. In case of 7 hr homogenized samples blocks of Mg2Si get rounded at the corners, Platelets of Ni get fragmented and distributed uniformly in the aluminium matrix. Results show improved volumetric wear resistance and reduced coefficient of friction after homogenizing heat treatment.

Thermodynamic properties of Mg2Si and Mg2Ge investigated by first principles method

International Nuclear Information System (INIS)

Wang, Hanfu; Jin, Hao; Chu, Weiguo; Guo, Yanjun

2010-01-01

The lattice dynamics and thermodynamic properties of Mg 2 Si and Mg 2 Ge are studied based on the first principles calculations. We obtain the phonon dispersion curves and phonon density of states spectra using the density functional perturbation theory with local density approximations. By employing the quasi-harmonic approximation, we calculate the temperature dependent Helmholtz free energy, bulk modulus, thermal expansion coefficient, specific heat, Debye temperature and overall Grueneisen coefficient. The results are in good agreement with available experimental data and previous theoretical studies. The thermal conductivities of both compounds are then estimated with the Slack's equation. By carefully choosing input parameters, especially the acoustic Debye temperature, we find that the calculated thermal conductivities agree fairly well with the experimental values above 80 K for both compounds. This demonstrates that the lattice thermal conductivity of simple cubic semiconductors may be estimated with satisfactory accuracy by combining the Slack's equation with the necessary thermodynamics parameters derived completely from the first principles calculations.

First-principles investigation of Fe-doped MgSiO3-ilmenite

International Nuclear Information System (INIS)

Stashans, Arvids; Rivera, Krupskaya; Pinto, Henry P.

2012-01-01

First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO 3 mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using ΔSCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO 3 . Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe⇒Mg reaction can be described as substitutionally labile with Fe 2+ complex being found in the high-spin state at low pressure MgSiO 3 -ilmenite conditions.

High Performance Bulk Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Ren, Zhifeng [Boston College, Chestnut Hill, MA (United States)

2013-03-31

Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

Shock and Release Data on Forsterite (Mg2SiO4) Single Crystals

Science.gov (United States)

Root, S.; Townsend, J. P.; Shulenburger, L.; Davies, E.; Kraus, R. G.; Spaulding, D.; Stewart, S. T.; Jacobsen, S. B.; Mattsson, T. R.

2016-12-01

The Kepler mission has discovered numerous extra-solar rocky planets with sizes ranging from Earth-size to the super-Earths with masses 40 times larger than Earth. The solid solution series of (Mg, Fe)2SiO4 (olivine) is a major component in the mantle of Earth and likely these extra-solar rocky planets. However, understanding how the (Mg, Fe)2SiO4 system behaves at Earth like and super-Earth like pressures is still unknown. Using Sandia's Z machine facility, we shock compress single crystal forsterite, the Mg end-member of the olivine series. Solid aluminum flyers are accelerated up to 28 km/s to generate steady shock states up to 950 GPa. Release states from the Hugoniot are determined as well. In addition to experiments, we perform density functional theory (DFT) calculations to examine the potential phases along the Mg2SiO4 Hugoniot. We compare our results to other recent shock experiments on forsterite. Sandia National Laboratories is a multiprogram laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under Contract DE-AC52-07NA27344.

Thermoelectric and mechanical properties of spark plasma sintered Cu3SbSe3 and Cu3SbSe4: Promising thermoelectric materials

Science.gov (United States)

Tyagi, Kriti; Gahtori, Bhasker; Bathula, Sivaiah; Toutam, Vijaykumar; Sharma, Sakshi; Singh, Niraj Kumar; Dhar, Ajay

2014-12-01

We report the synthesis of thermoelectric compounds, Cu3SbSe3 and Cu3SbSe4, employing the conventional fusion method followed by spark plasma sintering. Their thermoelectric properties indicated that despite its higher thermal conductivity, Cu3SbSe4 exhibited a much larger value of thermoelectric figure-of-merit as compared to Cu3SbSe3, which is primarily due to its higher electrical conductivity. The thermoelectric compatibility factor of Cu3SbSe4 was found to be ˜1.2 as compared to 0.2 V-1 for Cu3SbSe3 at 550 K. The results of the mechanical properties of these two compounds indicated that their microhardness and fracture toughness values were far superior to the other competing state-of-the-art thermoelectric materials.

Performance of a Composite Thermoelectric Generator with Different Arrangements of SiGe, BiTe and PbTe under Different Configurations

Directory of Open Access Journals (Sweden)

Alexander Vargas-Almeida

2015-10-01

Full Text Available In this study, we analyze the role of the thermoelectric (TE properties, namely Seebeck coefficient α, thermal conductivity κ and electrical resistivity ρ, of three different materials in a composite thermoelectric generator (CTEG under different configurations. The CTEG is composed of three thermoelectric modules (TEMs: (1 two TEMs thermally and electrically connected in series (SC; (2 two branches of TEMs thermally and electrically connected in parallel (PSC; and (3 three TEMs thermally and electrically connected in parallel (TEP. In general, each of the TEMs have different thermoelectric parameters, namely a Seebeck coefficient α, a thermal conductance K and an electrical resistance R. Following the framework proposed recently, we show the effect of: (1 the configuration; and (2 the arrangements of TE materials on the corresponding equivalent figure of merit Zeq and consequently on the maximum power Pmax and efficiency η of the CTEG. Firstly, we consider that the whole system is formed of the same thermoelectric material (α1,K1,R1 = α2,K2,R2 = α3,K3,R3 and, secondly, that the whole system is constituted by only two different thermoelectric materials Entropy 2015, 17 7388 (αi,Ki,Ri ≠ αj ,Kj ,Rj 6= αl,Kl,Rl, where i, j, l can be 1, 2 or 3. In this work, we propose arrangements of TEMs, which clearly have the advantage of a higher thermoelectric figure of merit value compared to a conventional thermoelectric module. A corollary about the Zeq-max for CTEG is obtained as a result of these considerations. We suggest an optimum configuration.

Band structure of semiconductor compounds of Mg sub 2 Si and Mg sub 2 Ge with strained crystal lattice

CERN Document Server

Krivosheeva, A V; Shaposhnikov, V L; Krivosheev, A E; Borisenko, V E

2002-01-01

The effect of isotopic and unaxial deformation of the crystal lattice on the electronic band structure of indirect band gap semiconductors Mg sub 2 Si and Mg sub 2 Ge has been simulated by means of the linear augmented plane wave method. The reduction of the lattice constant down to 95 % results in a linear increase of the direct transition in magnesium silicide by 48%. The stresses arising under unaxial deformation shift the bands as well as result in splitting of degenerated states. The dependence of the interband transitions on the lattice deformation is nonlinear in this case

Intrinsically High Thermoelectric Performance in AgInSe2 n-Type Diamond-Like Compounds.

Science.gov (United States)

Qiu, Pengfei; Qin, Yuting; Zhang, Qihao; Li, Ruoxi; Yang, Jiong; Song, Qingfeng; Tang, Yunshan; Bai, Shengqiang; Shi, Xun; Chen, Lidong

2018-03-01

Diamond-like compounds are a promising class of thermoelectric materials, very suitable for real applications. However, almost all high-performance diamond-like thermoelectric materials are p-type semiconductors. The lack of high-performance n-type diamond-like thermoelectric materials greatly restricts the fabrication of diamond-like material-based modules and their real applications. In this work, it is revealed that n-type AgInSe 2 diamond-like compound has intrinsically high thermoelectric performance with a figure of merit ( zT ) of 1.1 at 900 K, comparable to the best p-type diamond-like thermoelectric materials reported before. Such high zT is mainly due to the ultralow lattice thermal conductivity, which is fundamentally limited by the low-frequency Ag-Se "cluster vibrations," as confirmed by ab initio lattice dynamic calculations. Doping Cd at Ag sites significantly improves the thermoelectric performance in the low and medium temperature ranges. By using such high-performance n-type AgInSe 2 -based compounds, the diamond-like thermoelectric module has been fabricated for the first time. An output power of 0.06 W under a temperature difference of 520 K between the two ends of the module is obtained. This work opens a new window for the applications using the diamond-like thermoelectric materials.

Synthesis of ceramic powders of La9,56 (SiO4)6O2,34 and La9,8Si5,7MgO,3O26,4 by modified sol-gel process

International Nuclear Information System (INIS)

Lira, Sabrina Lopes; Paiva, Mayara Rafaela Soares; Misso, Agatha Matos; Elias, Daniel Ricco; Yamagata, Chieko

2012-01-01

Lanthanum silicate oxyapatite materials are promising for application as electrolyte in solid oxide fuel cells because of high ionic conductivity at temperatures between 600 deg C and 800 deg C. In this work, oxyapatites with the composition La 9,56 (SiO 4 ) 6 O 2,34 , and La 9,8 Si 5,7 Mg 0,3 O 26,4 were synthesized by using the sol-gel method, followed by precipitation. Initially, the gel of silica was synthesized from sodium silicate solution, by acid catalysis using lanthanum and magnesium chloride solution. Then, the La and Mg hydroxides were precipitated with NaOH in the gel. The powders were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and measurements of specific surface area. The crystalline oxyapatite phase of La 9,56 (SiO 4 ) 6 O 2,34 , and was La 9,8 Si 5,7 Mg 0,3 O 26,4 obtained by calcination at 900 deg C for 2 and 1h respectively (author)

Effect of Cooling Rate and Chemical Modification on the Tensile Properties of Mg-5wt% Si Alloy

Science.gov (United States)

Mirshahi, Farshid; Meratian, Mahmood; Zahrani, Mohsen Mohammadi; Zahrani, Ehsan Mohammadi

Hypereutectic Mg-Si alloys are a new class of light materials usable for aerospace and other advanced engineering applications. In this study, the effects of both cooling rate and bismuth modification on the micro structure and tensile properties of hypereutectic Mg-5wt% Si alloy were investigated. It was found that the addition of 0.5% Bi, altered the morphology of primary Mg2Si particles from bulky to polygonal shape and reduced their mean size from more than 70 μm to about 30 (am. Also, the tensile strength and elongation of the modified alloy increased about 10% and 20%, respectively, which should be ascribed to the modification of Mg2Si morphology and more uniform distribution of the primary particles. Moreover, an increase in tensile strength value with increase in cooling rate were observed which is attributed to finer micro structure of alloy in higher cooling rates. It was observed that Bi addition is significantly more effective in refining the morphology of primary Mg2Si particles than applying faster cooling rates.

Thermoelectric transport in rare-earth compounds

Energy Technology Data Exchange (ETDEWEB)

Koehler, Ulrike

2007-07-01

This work focuses on the thermoelectric transport in rare-earth compounds. The measurements of the thermal conductivity, thermopower, and Nernst coefficient are supplemented by investigations of other quantities as magnetic susceptibility and specific heat. Chapter 2 provides an introduction to the relevant physical concepts. Section 1 of that chapter summarizes the characteristic properties of rare-earth systems; section 2 gives an overview on thermoelectric transport processes in magnetic fields. The applied experimental techniques as well as the new experimental setup are described in detail in Chapter 3. The experimental results are presented in Chapter 4-6, of which each concentrates on a different subject. In Chapter 4, various Eu clathrates and the skutterudite-like Ce{sub 3}Rh{sub 4}Sn{sub 13} are presented, which have been investigated as potential thermoelectric materials for applications. Chapter 5 focusses on the study of the energy scales in the heavy-fermion series Lu{sub 1-x}Yb{sub x}Rh{sub 2}Si{sub 2} and Ce{sub x}La{sub 1-x}Ni{sub 2}Ge{sub 2} by means of thermopower investigations. Chapter 6 is dedicated to the thermoelectric transport properties of the correlated semimetal CeNiSn with special emphasis on the Nernst coefficient of this compound. (orig.)

Newly synthesized MgAl2Ge2: A first-principles comparison with its silicide and carbide counterparts

Science.gov (United States)

Tanveer Karim, A. M. M.; Hadi, M. A.; Alam, M. A.; Parvin, F.; Naqib, S. H.; Islam, A. K. M. A.

2018-06-01

Using plane-wave pseudopotential density functional theory (DFT), the first-principle calculations are performed to investigate the structural aspects, mechanical behaviors and electronic features of the newly synthesized CaAl2Si2-prototype intermetallic compound, MgAl2Ge2 for the first time and the results are compared with those calculated for its silicide and carbide counterparts MgAl2Si2 and MgAl2C2. The calculated lattice constants agree fairly well with their corresponding experimental values. The estimated elastic tensors satisfy the mechanical stability conditions for MgAl2Ge2 along with MgAl2Si2 and MgAl2C2. The level of elastic anisotropy increases following the sequence of X-elements Ge → Si → C. MgAl2Ge2 and MgAl2Si2 are expected to be ductile and damage tolerant, while MgAl2C2 is a brittle one. MgAl2Ge2 and MgAl2Si2 should exhibit better thermal shock resistance and low thermal conductivity and accordingly these can be used as thermal barrier coating (TBC) materials. The Debye temperature of MgAl2Ge2 is lowest among three intermetallic compounds. MgAl2Ge2 and MgAl2Si2 should exhibit metallic conductivity; while the dual characters of weak-metals and semiconductors are expected for MgAl2C2. The values of theoretical Vickers hardness for MgAl2Ge2, MgAl2Si2, and MgAl2C2 are 3.3, 2.7, and 7.7 GPa, respectively, indicating that these three intermetallics are soft and easily machinable.

Influence of surface morphology and UFG on damping and mechanical properties of composite reinforced with spinel MgAl{sub 2}O{sub 4}-SiC core-shell microcomposites

Energy Technology Data Exchange (ETDEWEB)

Singh, Subhash; Pal, Kaushik, E-mail: pl_kshk@yahoo.co.in

2017-01-15

Interface between ceramic particulate and matrix is known to control the response of the materials and functionality of the composite. Among numerous physical properties, grain structure of the materials has also played a significant role in defining the behaviour of metal matrix composites. Usually, silicon carbide (SiC) particles show poor interfacial wettability in aluminium melt. Herein, we were successfully synthesized magnesium oxide (MgO) and nanocrystalline magnesium aluminate (MgAl{sub 2}O{sub 4}) spinel coated silicon carbide (SiC) core-shell micro-composites through sol-gel technique to improve the wettability of dispersoids. Core-shell structures of submicron size were thoroughly investigated by various characterization techniques. Further, aluminium matrix composites incorporated with pristine SiC, MgO grafted SiC and MgAl{sub 2}O{sub 4} grafted SiC particles were fabricated by stir casting technique, respectively. Additionally, as-cast composites were processed via friction stir processing (FSP) technique to observe the influence of grain refinement on mechanical and damping properties. Electron back scattered diffraction (EBSD), Field emission scanning electron microscopy (FE-SEM) and X-ray energy dispersion spectroscopy (EDX) analysis were conducted for investigating grain size refinement, adequate dispersion, stability and de-agglomeration of encapsulated SiC particles in aluminium matrix. The mechanical as well as thermal cyclic (from − 100 to 400 °C) damping performance of the as-cast and friction stir processed composites were studied, respectively. Finally, the enhanced properties were attributable to reduced agglomeration, stabilization and proper dispersion of the tailored SiC particles Al matrix. - Highlights: •Synthesizing a novel coating layer of MgO and MgAl{sub 2}O{sub 4} spinel onto SiC particles •Significant improvement in UTS and hardness by reinforcing tailored SiC in Al •Significant grain refinements were obtained through

Mechanical characterization of hydroxyapatite, thermoelectric materials and doped ceria

Science.gov (United States)

Fan, Xiaofeng

For a variety of applications of brittle ceramic materials, porosity plays a critical role structurally and/or functionally, such as in engineered bone scaffolds, thermoelectric materials and in solid oxide fuel cells. The presence of porosity will affect the mechanical properties, which are essential to the design and application of porous brittle materials. In this study, the mechanical property versus microstructure relations for bioceramics, thermoelectric (TE) materials and solid oxide fuel cells were investigated. For the bioceramic material hydroxyapatite (HA), the Young's modulus was measured using resonant ultrasound spectroscopy (RUS) as a function of (i) porosity and (ii) microcracking damage state. The fracture strength was measured as a function of porosity using biaxial flexure testing, and the distribution of the fracture strength was studied by Weibull analysis. For the natural mineral tetrahedrite based solid solution thermoelectric material (Cu10Zn2As4S13 - Cu 12Sb4S13), the elastic moduli, hardness and fracture toughness were studied as a function of (i) composition and (ii) ball milling time. For ZiNiSn, a thermoelectric half-Heusler compound, the elastic modulus---porosity and hardness---porosity relations were examined. For the solid oxide fuel cell material, gadolina doped ceria (GDC), the elastic moduli including Young's modulus, shear modulus, bulk modulus and Poisson's ratio were measured by RUS as a function of porosity. The hardness was evaluated by Vickers indentation technique as a function of porosity. The results of the mechanical property versus microstructure relations obtained in this study are of great importance for the design and fabrication of reliable components with service life and a safety factor. The Weibull modulus, which is a measure of the scatter in fracture strength, is the gauge of the mechanical reliability. The elastic moduli and Poisson's ratio are needed in analytical or numerical models of the thermal and

NATO Advanced Research Workshop on New Materials for Thermoelectric Applications

CERN Document Server

Hewson, Alex

2013-01-01

Thermoelectric devices could play an important role in making efficient use of our energy resources but their efficiency would need to be increased for their wide scale application. There is a multidisciplinary search for materials with an enhanced thermoelectric responses for use in such devices. This volume covers the latest ideas and developments in this research field, covering topics ranging from the fabrication and characterization of new materials, particularly those with strong electron correlation, use of nanostructured, layered materials and composites, through to theoretical work to gain a deeper understanding of thermoelectric behavior. It should be a useful guide and stimulus to all working in this very topical field.

Progress in doping of ruthenium silicide (Ru2Si3)

International Nuclear Information System (INIS)

Vining, C.B.; Allevato, C.E.

1992-01-01

This paper reports that ruthenium silicide (Ru 2 Si 3 ) is currently under development as a promising thermoelectric material suitable for space power applications. Key to realizing the potentially high figure of merit values of this material is the development of appropriate doping techniques. In this study, manganese and iridium have been identified as useful p- and n-type dopants, respectively. Resistivity values have been reduced by more than 3 orders of magnitude. Anomalous Hall effect results, however, complicate interpretation of some of the results and further effort is required to achieve optimum doping levels

Rapid degradation of azo dye Direct Black BN by magnetic MgFe{sub 2}O{sub 4}-SiC under microwave radiation

Energy Technology Data Exchange (ETDEWEB)

Gao, Jia; Yang, Shaogui, E-mail: yangsg@nju.edu.cn; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

2016-08-30

Highlights: • MgFe{sub 2}O{sub 4}-SiC was first successfully synthesized. • MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range. • Fast decolorization and high TOC removal of azo dye Direct Black BN with complicated structure could occur with MgFe{sub 2}O{sub 4}-SiC under MW radiation. • MgFe{sub 2}O{sub 4}-SiC had better MW absorbing property and higher MW catalytic activity than MnFe{sub 2}O{sub 4}-SiC under the same condition. • MgFe{sub 2}O{sub 4}-SiC was of practical use in the wastewater treatment. - Abstract: A novel microwave (MW) catalyst, MgFe{sub 2}O{sub 4} loaded on SiC (MgFe{sub 2}O{sub 4}-SiC), was successfully synthesized by sol-gel method, and pure MgFe{sub 2}O{sub 4} was used as reference. The MgFe{sub 2}O{sub 4} and MgFe{sub 2}O{sub 4}-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N{sub 2} adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe{sub 2}O{sub 4}-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe{sub 2}O{sub 4}-SiC indicated that degradation efficiency of DB BN (20 mg L{sup −1}) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe{sub 2}O{sub 4}-SiC obviously decreased. The good stability and applicability of MgFe{sub 2}O{sub 4}-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation

Synthesis, mechanical properties and corrosion behavior of powder metallurgy processed Fe/Mg2Si composites for biodegradable implant applications.

Science.gov (United States)

Sikora-Jasinska, M; Paternoster, C; Mostaed, E; Tolouei, R; Casati, R; Vedani, M; Mantovani, D

2017-12-01

Recently, Fe and Fe-based alloys have shown their potential as degradable materials for biomedical applications. Nevertheless, the slow corrosion rate limits their performance in certain situations. The shift to iron matrix composites represents a possible approach, not only to improve the mechanical properties, but also to accelerate and tune the corrosion rate in a physiological environment. In this work, Fe-based composites reinforced by Mg 2 Si particles were proposed. The initial powders were prepared by different combinations of mixing and milling processes, and finally consolidated by hot rolling. The influence of the microstructure on mechanical properties and corrosion behavior of Fe/Mg 2 Si was investigated. Scanning electron microscopy and X-ray diffraction were used for the assessment of the composite structure. Tensile and hardness tests were performed to characterize the mechanical properties. Potentiodynamic and static corrosion tests were carried out to investigate the corrosion behavior in a pseudo-physiological environment. Samples with smaller Mg 2 Si particles showed a more homogenous distribution of the reinforcement. Yield and ultimate tensile strength increased when compared to those of pure Fe (from 400MPa and 416MPa to 523MPa and 630MPa, respectively). Electrochemical measurements and immersion tests indicated that the addition of Mg 2 Si could increase the corrosion rate of Fe even twice (from 0.14 to 0.28mm·year -1 ). It was found that the preparation method of the initial composite powders played a major role in the corrosion process as well as in the corrosion mechanism of the final composite. Copyright © 2017 Elsevier B.V. All rights reserved.

Contact resistance and stability study for Au, Ti, Hf and Ni contacts on thin-film Mg2Si

KAUST Repository

Zhang, Bo; Zheng, Tao; Wang, Qingxiao; Zhu, Yihan; Alshareef, Husam N.; Kim, Moon J.; Gnade, Bruce E.

2016-01-01

We present a detailed study of post-deposition annealing effects on contact resistance of Au, Ti, Hf and Ni electrodes on Mg2Si thin films. Thin-film Mg2Si and metal contacts were deposited using magnetron sputtering. Various post

Mechanical Response of Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, Andrew A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Case, Eldon D. [Michigan State Univ., East Lansing, MI (United States)

2015-05-01

A sufficient mechanical response of thermoelectric materials (TEMats) to structural loadings is a prerequisite to the exploitation of any candidate TEMat's thermoelectric efficiency. If a TEMat is mechanically damaged or cracks from service-induced stresses, then its thermal and electrical functions can be compromised or even cease. Semiconductor TEMats tend to be quite brittle and have a high coefficient of thermal expansion; therefore, they can be quite susceptible to mechanical failure when subjected to operational thermal gradients. Because of this, sufficient mechanical response (vis-a-vis, mechanical properties) of any candidate TEMat must be achieved and sustained in the context of the service-induced stress state to which it is subjected. This report provides an overview of the mechanical responses of state-of-the-art TEMats; discusses the relevant properties that are associated with those responses and their measurement; and describes important, nonequilibrium phenomena that further complicate their use in thermoelectric devices. For reference purposes, the report also includes several appendixes that list published data on elastic properties and strengths of a variety of TEMats.

The structure of MgO-SiO2 glasses at elevated pressure.

Science.gov (United States)

Wilding, Martin; Guthrie, Malcolm; Kohara, Shinji; Bull, Craig L; Akola, Jaakko; Tucker, Matt G

2012-06-06

The magnesium silicate system is an important geophysical analogue and neutron diffraction data from glasses formed in this system may also provide an initial framework for understanding the structure-dependent properties of related liquids that are important during planetary formation. Neutron diffraction data collected in situ for a single composition (38 mol% SiO(2)) magnesium silicate glass sample shows local changes in structure as pressure is increased from ambient conditions to 8.6 GPa at ambient temperature. A method for obtaining the fully corrected, total structure factor, S(Q), has been developed that allows accurate structural characterization as this weakly scattering glass sample is compressed. The measured S(Q) data indicate changes in chemical ordering with pressure and the real-space transforms show an increase in Mg-O coordination number and a distortion of the local environment around magnesium ions. We have used reverse Monte Carlo methods to compare the high pressure and ambient pressure structures and also compare the high pressure form with a more silica-poor glass (Mg(2)SiO(4)) that represents the approach to a more dense, void-free and topologically ordered structure. The Mg-O coordination number increases with pressure and we also find that the degree of continuous connectivity of Si-O bonds increases via a collapse of interstices.

From thermoelectric bulk to nanomaterials: Current progress for Bi2Te3 and CoSb3

International Nuclear Information System (INIS)

Peranio, N.; Eibl, O.; Baessler, S.; Nielsch, K.; Klobes, B.; Hermann, R.P.; Daniel, M.; Albrecht, M.; Goerlitz, H.; Pacheco, V.; Bedoya-Martinez, N.; Hashibon, A.; Elsaesser, C.

2016-01-01

Bi 2 Te 3 and CoSb 3 based nanomaterials were synthesized and their thermoelectric, structural, and vibrational properties analyzed to assess and reduce ZT-limiting mechanisms. The same preparation and/or characterization methods were applied in the different materials systems. Single-crystalline, ternary p-type Bi 15 Sb 29 Te 56 , and n-type Bi 38 Te 55 Se 7 nanowires with power factors comparable to nanostructured bulk materials were prepared by potential-pulsed electrochemical deposition in a nanostructured Al 2 O 3 matrix. p-type Sb 2 Te 3 , n-type Bi 2 Te 3 , and n-type CoSb 3 thin films were grown at room temperature using molecular beam epitaxy and were subsequently annealed at elevated temperatures. This yielded polycrystalline, single phase thin films with optimized charge carrier densities. In CoSb 3 thin films the speed of sound could be reduced by filling the cage structure with Yb and alloying with Fe yielded p-type material. Bi 2 (Te 0.91 Se 0.09 ) 3 /SiC and (Bi 0.26 Sb 0.74 ) 2 Te 3 /SiC nanocomposites with low thermal conductivities and ZT values larger than 1 were prepared by spark plasma sintering. Nanostructure, texture, chemical composition, as well as electronic and phononic excitations were investigated by X-ray diffraction, nuclear resonance scattering, inelastic neutron scattering, Moessbauer spectroscopy, and transmission electron microscopy. For Bi 2 Te 3 materials, ab-initio calculations together with equilibrium and non-equilibrium molecular dynamics simulations for point defects yielded their formation energies and their effect on lattice thermal conductivity, respectively. Current advances in thermoelectric Bi 2 Te 3 and CoSb 3 based nanomaterials are summarized. Advanced synthesis and characterization methods and theoretical modeling were combined to assess and reduce ZT-limiting mechanisms in these materials. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

DEFF Research Database (Denmark)

Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

1999-01-01

2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...... analysis of the glasses reveals no sign of important changes in the glass structure upon SiO2 addition. Some increase in glass durability with SiO2 concentration is reported and its cause is discussed....

Analysis of (Ba,Ca,Sr){sub 3}MgSi{sub 2}O{sub 8}:Eu{sup 2+}, Mn{sup 2+} phosphors for application in solid state lighting

Energy Technology Data Exchange (ETDEWEB)

Han, J.K. [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States); Piqutte, A.; Hannah, M.E. [OSRAM SYLVANIA Central Research, 71 Cherry Hill Drive Beverly, MA 01915 (United States); Hirata, G.A. [Centro de Nanociencias y Nanotecnolgía, Universidad Nacional Autónoma de México, Km. 107 Carretera Tijuana-Ensenada Apdo, Ensenada MX CP 22860 (Mexico); Talbot, J.B. [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States); University of California, San Diego, Department of Nanoengineering, La Jolla, CA 92093 (United States); Mishra, K.C. [OSRAM SYLVANIA Central Research, 71 Cherry Hill Drive Beverly, MA 01915 (United States); McKittrick, J., E-mail: jmckittrick@ucsd.edu [University of California, San Diego, Materials Science and Engineering Program, La Jolla, CA 92093 (United States); University of California, San Diego, Department of Mechanical and Aerospace Engineering, La Jolla, CA 92093 (United States)

2014-04-15

The luminescence properties of Eu{sup 2+} and Mn{sup 2+} co-activated (Ba,Ca,Sr){sub 3}MgSi{sub 2}O{sub 8} phosphors prepared by combustion synthesis were studied. Eu{sup 2+}-activated (Ba,Ca,Sr){sub 3}MgSi{sub 2}O{sub 8} has a broad blue emission band centered at 450–485 nm and Eu{sup 2+}–Mn{sup 2+}-activated (Ba,Ca,Sr){sub 3}MgSi{sub 2}O{sub 8} exhibits a red emission around 620–703 nm, depending on the relative concentrations of Ba, Ca and Sr. The particle size of Eu{sup 2+} and Mn{sup 2+} co-activated (Ba,Ca){sub 3}MgSi{sub 2}O{sub 8} ranges from 300 nm to 1 μm depending on the metal ion and are agglomerated due to post-synthesis, high temperature annealing. The green emission of Ba{sub 3}MgSi{sub 2}O{sub 8} originates from secondary phases (Ba{sub 2}SiO{sub 4} and BaMgSiO{sub 4}) confirmed by emission spectra and X-ray diffraction patterns. The secondary phases of Ba{sub 3}MgSi{sub 2}O{sub 8} are removed by the addition of Sr. The quantum efficiencies range from 45% to 70% under 400 nm excitation and the lifetime of red emission of Ba{sub 3}MgSi{sub 2}O{sub 8} decreases significantly with increasing temperature, which is 54% at 400 K of that at 80 K compared to that of blue emission (90% at 400 K of that at 80 K). -- highlights: • (Ba,Ca,Sr){sub 3}MgSi{sub 2}O{sub 8}:Eu{sup 2+}, Mn{sup 2+} phosphors were prepared by a combustion synthesis method. • The emission spectra consist of broad blue-emission band and red-emission band. • The quantum efficiencies range between 45% and 70%, depending on the relative concentrations of Ba, Ca and Sr. • The secondary phases were eliminated by additions of Sr. • Lifetime of the red-emission decreases with increasing temperature, suggesting that these phosphors are not useful for solid state lighting applications.

Viscosity Measurements of SiO2-"FeO"-MgO System in Equilibrium with Metallic Fe

Science.gov (United States)

Chen, Mao; Raghunath, Sreekanth; Zhao, Baojun

2014-01-01

The present study delivers the measurements of viscosities in the SiO2-"FeO"-MgO system in equilibrium with metallic Fe. The rotational spindle technique was used for the measurements at the temperature range of 1523 K to 1773 K (1250 °C to 1500 °C). Molybdenum crucibles and spindles were employed in all measurements. The viscosity measurements were carried out at 31 to 47 mol pct SiO2 and up to 18.8 mol pct MgO. Analysis of the quenched sample by Electron probe X-ray microanalysis after the viscosity measurement enables the composition and microstructure of the slag to be directly linked with the viscosity. The replacement of "FeO" by MgO was found to increase viscosity and activation energy of the SiO2-"FeO"-MgO slags. The modified Quasi-chemical Viscosity Model was further optimized in this system based on the current viscosity measurements.

Strategies for discovery and optimization of thermoelectric materials: Role of real objects and local fields

Science.gov (United States)

Zhu, Hao; Xiao, Chong

2018-06-01

Thermoelectric materials provide a renewable and eco-friendly solution to mitigate energy shortages and to reduce environmental pollution via direct heat-to-electricity conversion. Discovery of the novel thermoelectric materials and optimization of the state-of-the-art material systems lie at the core of the thermoelectric society, the basic concept behind these being comprehension and manipulation of the physical principles and transport properties regarding thermoelectric materials. In this mini-review, certain examples for designing high-performance bulk thermoelectric materials are presented from the perspectives of both real objects and local fields. The highlights of this topic involve the Rashba effect, Peierls distortion, local magnetic field, and local stress field, which cover several aspects in the field of thermoelectric research. We conclude with an overview of future developments in thermoelectricity.

Effect Of SiC Particles On Sinterability Of Al-Zn-Mg-Cu P/M Alloy

Directory of Open Access Journals (Sweden)

Rudianto H.

2015-06-01

Full Text Available Premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder was analyzed as matrix in this research. Gas atomized powder Al-9Si with 20% volume fraction of SiC particles was used as reinforcement and added into the alloy with varied concentration. Mix powders were compacted by dual action press with compaction pressure of 700 MPa. High volume fraction of SiC particles gave lower green density due to resistance of SiC particles to plastic deformation during compaction process and resulted voids between particles and this might reduce sinterability of this mix powder. Sintering was carried out under ultra high purity nitrogen gas from 565°-580°C for 1 hour. High content of premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder gave better sintering density and reached up to 98% relative. Void between particles, oxide layer on aluminum powder and lower wettability between matrix and reinforcement particles lead to uncompleted liquid phase sintering, and resulted on lower sintering density and mechanical properties on powder with high content of SiC particles. Mix powder with wt90% of Alumix 431D and wt10% of Al-9Si-vf20SiC powder gave higher tensile strength compare to another mix powder for 270 MPa. From chemical compositions, sintering precipitates might form after sintering such as MgZn2, CuAl2 and Mg2Si. X-ray diffraction, DSC-TGA, and SEM were used to characterize these materials.

Kinetic studies of oxidation of MgAlON and a comparison of the oxidation behaviour of AlON, MgAlON, O'SiAlON-ZrO{sub 2}, and BN-ZCM ceramics

Energy Technology Data Exchange (ETDEWEB)

Wang Xidong; Seetharaman, S. [Div. of Metallurgy, Royal Inst. of Tech., Stockholm (Sweden); Li Wenchao [Dept. of Physical Chemistry, Univ. of Science and Technology Beijing (USTB), Beijing, BJ (China)

2002-06-01

The kinetics and morphology of the oxidation process of magnesium-aluminium oxynitride (MgAlON), aluminium oxynitride (AlON), O'SiAlON-ZrO{sub 2}, and BN-ZCM have been studied in the temperature range 1373-1773 K (ZCM=30 wt% ZrO{sub 2}, 52 wt% Al{sub 2}O{sub 3} and 18 wt% 3 Al{sub 2}O{sub 3}.2 SiO{sub 2}). Oxidation experiments with powder and plate samples of the above materials have been carried out in air. MgAlON shows the best resistance to oxidation at lower temperatures (< 1473 K), whereas at higher temperatures ({proportional_to} 773 K), AlON shows the best resistance. O'SiAlON-ZrO{sub 2} shows very good oxidation resistance up to 1673 K. But its oxidation rate increases strongly above 1673 K, presumably due to the formation of liquid phase. BN-ZCM has the poorest oxidation resistance due to the evaporation of B{sub 2}O{sub 3}. The activation energies for the chemical oxidation reaction of AlON, MgAlON, and O'SiAlON-ZrO{sub 2} are 214, 330 and 260 kJ/mol, respectively. The overall diffusion activation energies for AlON, MgAlON, O'SiAlON-ZrO{sub 2} and BN-ZCM are 227, 573, 367 and 289 kJ/mol, respectively. (orig.)

Optimal determination of the elastic constants of woven 2D SiC/SiC composite materials

International Nuclear Information System (INIS)

Mouchtachi, A; Guerjouma, R El; Baboux, J C; Rouby, D; Bouami, D

2004-01-01

For homogeneous materials, the ultrasonic immersion method, associated with a numerical optimization process mostly based on Newton's algorithm, allows the determination of elastic constants for various synthetic and natural composite materials. Nevertheless, a principal limitation of the existing optimization procedure occurs when the considered material is at the limit of the homogeneous hypothesis. Such is the case of the woven bidirectional SiC matrix and SiC fibre composite material. In this study, we have developed two numerical methods for the determination of the elastic constants of the 2D SiC/SiC composite material (2D SiC/SiC). The first one is based on Newton's algorithm: the elastic constants are obtained by minimizing the square deviation between experimental and calculated velocities. The second method is based on the Levenberg-Marquardt algorithm. We show that these algorithms give the same results in the case of homogeneous anisotropic composite materials. For the 2D SiC/SiC composite material, the two methods, using the same measured velocities, give different sets of elastic constants. We then note that the Levenberg-Marquardt algorithm enables a better convergence towards a global set of elastic constants in good agreement with the elastic properties, which can be measured using classical quasi-static methods

A Novel MgO-CaO-SiO2 System for Fabricating Bone Scaffolds with Improved Overall Performance

Directory of Open Access Journals (Sweden)

Hang Sun

2016-04-01

Full Text Available Although forsterite (Mg2SiO4 possesses good biocompatibility and suitable mechanical properties, the insufficient bioactivity and degradability hinders its further application. In this study, a novel MgO-CaO-SiO2 system was developed by adding wollastonite (CaSiO3 into Mg2SiO4 to fabricate bone scaffolds via selective laser sintering (SLS. The apatite-forming ability and degradability of the scaffolds were enhanced because the degradation of CaSiO3 could form silanol groups, which could offer nucleation sites for apatite. Meanwhile, the mechanical properties of the scaffolds grew with increasing CaSiO3 to 20 wt %. It was explained that the liquid phase of CaSiO3 promoted the densification during sintering due to its low melting point. With the further increase in CaSiO3, the mechanical properties decreased due to the formation of the continuous filling phase. Furthermore, the scaffolds possessed a well-interconnected porous structure and exhibited an ability to support cell adhesion and proliferation.

Thermoelectric Properties of Silicon Germanium: An Investigation of the Reduction of Lattice Thermal Conductivity and Enhancement of Power Factor

Science.gov (United States)

Lahwal, Ali Sadek

Thermoelectric materials are of technological interest owing to their ability of direct thermal-to-electrical energy conversion. In thermoelectricity, thermal gradients can be used to generate an electrical power output. Recent efforts in thermoelectrics are focused on developing higher efficient power generation materials. In this dissertation, the overall goal is to investigate both the n-type and p-type of the state of the art thermoelectric material, silicon germanium (SiGe), for high temperature power generation. Further improvement of thermoelectric performance of Si-Ge alloys hinges upon how to significantly reduce the as yet large lattice thermal conductivity, and optimizing the thermoelectric power factor PF. Our methods, in this thesis, will be into two different approaches as follow: The first approach is manipulating the lattice thermal conductivity of n and p-type SiGe alloys via direct nanoparticle inclusion into the n-type SiGe matrix and, in a different process, using a core shell method for the p-type SiGe. This approach is in line with the process of in-situ nanocomposites. Nanocomposites have become a new paradigm for thermoelectric research in recent years and have resulted in the reduction of thermal conductivity via the nano-inclusion and grain boundary scattering of heat-carrying phonons. To this end, a promising choice of nano-particle to include by direct mixing into a SiGe matrix would be Yttria Stabilized Zirconia ( YSZ). In this work we report the preparation and thermoelectric study of n-type SiGe + YSZ nanocomposites prepared by direct mechanical mixing followed by Spark Plasma Sintering (SPS) processing. Specifically, we experimentally investigated the reduction of lattice thermal conductivity (kappaL) in the temperature range (30--800K) of n-type Si 80Ge20P2 alloys with the incorporation of YSZ nanoparticles (20 ˜ 40 nm diameter) into the Si-Ge matrix. These samples synthesized by SPS were found to have densities > 95% of the

Overview of industry interest in new thermoelectric materials

Energy Technology Data Exchange (ETDEWEB)

Lyon, Jr, H B

1997-07-01

The technology base for air conditioning, refrigeration, component cooling below ambient temperatures and power generation will be required to meet several new challenges. The main lines of these challenges will be presented in a way which relates them to the several new thermoelectric materials and materials engineering options being pursued by the research community. The potential benefits of thermoelectric devices are only partially met by enhancing the figure of merit ZT, the nature of the design challenge and the resulting systems approach are presented. The research and the industry are entering into a new era.

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

Science.gov (United States)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

First-principles investigation of Fe-doped MgSiO{sub 3}-ilmenite

Energy Technology Data Exchange (ETDEWEB)

Stashans, Arvids, E-mail: arvids@utpl.edu.ec [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Rivera, Krupskaya [Grupo de Fisicoquimica de Materiales, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Escuela de Geologia y Minas, Universidad Tecnica Particular de Loja, Apartado 11-01-608, Loja (Ecuador); Pinto, Henry P. [Interdisciplinary Center for Nanotoxicity, Department of Chemistry, Jackson State University, Jackson, Mississippi 39217-0510 (United States)

2012-06-15

First principles density functional theory and generalised gradient approximation (GGA) have been exploited to investigate Fe-doped ilmenite-type MgSiO{sub 3} mineral. Strong electron correlation effects not included in a density-functional formalism are described by a Hubbard-type on-site Coulomb repulsion (the DFT+U approach). Microstructure of equilibrium geometries, electronic band structures as well as magnetic properties are computed and discussed in detail. Hartree-Fock methodology is used as an extra tool to study optical properties of the same system. For equilibrium state of the doped mineral we find zigzag-type atomic rearrangements around the Fe impurity. The inclusion of correlation effects leads to an improved description of the electronic properties. In particular, it is discovered that Fe incorporation produces local energy levels within the band-gap of the material. Using {Delta}SCF method optical absorption energies are found to be equal to 2.2 and 2.6 eV leading to light absorption at longer wavelengths compared to the undoped MgSiO{sub 3}. Our results provide evidence on the occurrence of local magnetic moment in the region surrounding iron dopant. According to the outcomes, the Fe Rightwards-Double-Arrow Mg reaction can be described as substitutionally labile with Fe{sup 2+} complex being found in the high-spin state at low pressure MgSiO{sub 3}-ilmenite conditions.

Porous composite materials ZrO2(MgO)-MgO for osteoimplantology

International Nuclear Information System (INIS)

Buyakov, Ales; Litvinova, Larisa; Shupletsova, Valeria; Kulbakin, Denis; Kulkov, Sergey

2016-01-01

The pore structure and phase composition of ceramic composite material ZrO 2 (Mg)-MgO at different sintering temperatures were studied. The main mechanical characteristics of the material were determined and it was shown that they are close to the characteristics of natural bone tissues. It was shown that material structure has a positive effect on the pre-osteoblast cells proliferation. In-vitro studies of pre-osteoblast cells, cultivation on material surface showed a good cell adhesion, proliferation and differentiation of MMSC by osteogenic type.

Preparation of orthophosphate glasses in the MgO-CaO-SiO2-Nb2O5-P2O5 system.

Science.gov (United States)

Lee, Sungho; Ueda, Kyosuke; Narushima, Takayuki; Nakano, Takayoshi; Kasuga, Toshihiro

2017-01-01

Niobia/magnesia-containing orthophosphate invert glasses were successfully prepared in our earlier work. Orthophosphate groups in the glasses were cross-linked by tetrahedral niobia (NbO4) and magnesia. The aim of this work is to prepare calcium orthophosphate invert glasses containing magnesia and niobia, incorporating silica, and to evaluate their structures and releasing behaviors. The glasses were prepared by melt-quenching, and their structures and ion-releasing behaviors were evaluated. 31P solid-state nuclear magnetic resonance (NMR) and Raman spectroscopies showed the glasses consist of orthophosphate (PO4), orthosilicate (SiO4), and NbO4 tetrahedra. NbO4 and MgO in the glasses act as network formers. By incorporating SiO2 into the glasses, the chemical durability of the glasses was slightly improved. The glasses reheated at 800°C formed the orthophosphate crystalline phases, such as β-Ca3(PO4)2, Mg3(PO4)2 and Mg3Ca3(PO4)4 in the glasses. The chemical durability of the crystallized glasses was slightly improved. Orthosilicate groups and NbO4 in the glasses coordinated with each other to form Si-O-Nb bonds. The chemical durability of the glasses was slightly improved by addition of SiO2, since the field strength of Si is larger than that of Ca or Mg.

High thermoelectric power factor in two-dimensional crystals of Mo S2

Science.gov (United States)

Hippalgaonkar, Kedar; Wang, Ying; Ye, Yu; Qiu, Diana Y.; Zhu, Hanyu; Wang, Yuan; Moore, Joel; Louie, Steven G.; Zhang, Xiang

2017-03-01

The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces toward renewable energy production for the future. Efficient thermoelectric devices require high voltage generation from a temperature gradient and a large electrical conductivity while maintaining a low thermal conductivity. For a given thermal conductivity and temperature, the thermoelectric power factor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to a high power factor due to the unique density of states (DOS) of confined electrons and holes. The 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only due to such confinement effects but especially due to their large effective masses and valley degeneracies. Here, we report a power factor of Mo S2 as large as 8.5 mW m-1K-2 at room temperature, which is among the highest measured in traditional, gapped thermoelectric materials. To obtain these high power factors, we perform thermoelectric measurements on few-layer Mo S2 in the metallic regime, which allows us to access the 2D DOS near the conduction band edge and exploit the effect of 2D confinement on electron scattering rates, resulting in a large Seebeck coefficient. The demonstrated high, electronically modulated power factor in 2D TMDCs holds promise for efficient thermoelectric energy conversion.

Advanced thermoelectric materials and systems for automotive applications in the next millennium

Energy Technology Data Exchange (ETDEWEB)

Morelli, D T

1997-07-01

A combination of environmental, economic, and technological drivers has led to a reassessment of the potential for using thermoelectric devices in several automotive applications. In order for this technology to achieve its ultimate potential, new materials with enhanced thermoelectric properties are required. Experimental results on the fundamental physical properties of some new thermoelectric materials, including filled skutterudites and 1-1-1 intermetallic semiconductors, are presented.

Flexible screen printed thick film thermoelectric generator with reduced material resistivity

International Nuclear Information System (INIS)

Cao, Z; Koukharenko, E; Torah, R N; Tudor, J; Beeby, S P

2014-01-01

This work presents a flexible thick-film Bismuth Tellurium/Antimony Tellurium (BiTe/SbTe) thermoelectric generator (TEG) with reduced material resistivity fabricated by screen printing technology. Cold isostatic pressing (CIP) was introduced to lower the resistivity of the printed thermoelectric materials. The Seebeck coefficient (α) and the resistivity (ρ) of printed materials were measured as a function of applied pressure. A prototype TEG with 8 thermocouples was fabricated on flexible polyimide substrate. The dimension of a single printed element was 20 mm × 2 mm × 78.4 pm. The coiled-up prototype produced a voltage of 36.4 mV and a maximum power of 40.3 nW from a temperature gradient of 20 °C

Anisotropic thermal expansion of MgSiN2 from 10 to 300 K as measured by neutron diffraction

NARCIS (Netherlands)

Bruls, R.J.; Hintzen, H.T.J.M.; Metselaar, R.; Loong, C.K.

2000-01-01

The lattice parameters of orthorhombic MgSiN2 as a function of the temperature have been determined from time-of-flight neutron powder diffraction. The results indicate that MgSiN2, just like several other adamantine-type crystals, exhibits a relatively small thermal expansion coefficient at low

Investigation of Nanophase Materials for Thermoelectric Applications

National Research Council Canada - National Science Library

Stokes, Kevin

2004-01-01

.... We have also made contributions to new, pressure-dependent thermoelectric transport measurement techniques and chemical techniques for creating ordered nanoparticle assemblies consisting of two different nanoparticle materials.

Effect of Al and Mg Contents on Wettability and Reactivity of Molten Zn-Al-Mg Alloys on Steel Sheets Covered with MnO and SiO2 Layers

Science.gov (United States)

Huh, Joo-Youl; Hwang, Min-Je; Shim, Seung-Woo; Kim, Tae-Chul; Kim, Jong-Sang

2018-05-01

The reactive wetting behaviors of molten Zn-Al-Mg alloys on MnO- and amorphous (a-) SiO2-covered steel sheets were investigated by the sessile drop method, as a function of the Al and Mg contents in the alloys. The sessile drop tests were carried out at 460 °C and the variation in the contact angles (θc) of alloys containing 0.2-2.5 wt% Al and 0-3.0 wt% Mg was monitored for 20 s. For all the alloys, the MnO-covered steel substrate exhibited reactive wetting whereas the a-SiO2-covered steel exhibited nonreactive, nonwetting (θc > 90°) behavior. The MnO layer was rapidly removed by Al and Mg contained in the alloys. The wetting of the MnO-covered steel sheet significantly improved upon increasing the Mg content but decreased upon increasing the Al content, indicating that the surface tension of the alloy droplet is the main factor controlling its wettability. Although the reactions of Al and Mg in molten alloys with the a-SiO2 layer were found to be sluggish, the wettability of Zn-Al-Mg alloys on the a-SiO2 layer improved upon increasing the Al and Mg contents. These results suggest that the wetting of advanced high-strength steel sheets, the surface oxide layer of which consists of a mixture of MnO and SiO2, with Zn-Al-Mg alloys could be most effectively improved by increasing the Mg content of the alloys.

Effect of current on the microstructure and performance of (Bi2Te3)0.2(Sb2Te3)0.8 thermoelectric material via field activated and pressure assisted sintering

International Nuclear Information System (INIS)

Chen Ruixue; Meng Qingsen; Fan Wenhao; Wang Zhong

2011-01-01

(Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 thermoelectric material was sintered via a field activated and pressure assisted sintering (FAPAS) process. By applying different current intensity (0, 60, 320 A/cm 2 ) in the sintering process, the effects of electric current on the microstructure and thermoelectric performance were investigated. This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of (Bi 2 Te 3 ) 0.2 (Sb 2 Te 3 ) 0.8 samples. When the current intensity was raised to 320 A/cm 2 , the preferred orientation of grains was observed. Moreover, positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed. An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm 2 , respectively. (semiconductor materials)