WorldWideScience

Sample records for thermionic diode model

  1. Simple model for the description of a thermionic Cs diode in operation

    International Nuclear Information System (INIS)

    Tschersich, K.G.

    1975-01-01

    Because of the small voltage loss in the space between the electrodes, Cs is the most common work medium in thermionic diodes. With the model calculations of the processes in the space between the electrodes, the author aims to explain the formation of Cs ions and the current transport through the electrode gap at these low voltages. (RW/AK) [de

  2. The influences of noble gas on the volt-ampere characteristics of a thermionic Cs diode

    International Nuclear Information System (INIS)

    Tschersich, K.G.

    1975-10-01

    The influence of the distance between electrodes and of the partial pressure of added xenon on the voltage drop in the electrode gap is investigated by measuring current density-voltage curves on plane parallel thermionic test diodes. With unchanged diode parameters, an addition of xenon reduces the voltage drop when the product of Cs vapour pressure and electrode gap is smaller than an optimum value of about 5 x 10 -2 cm.Torr. The xenon influences the mobility and thus the duration of the Cs ions. These procedures are explained and discussed using a relatively simple mathematical model. (GG/LH) [de

  3. Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode.

    Science.gov (United States)

    Kumar, Ashutosh; Kashid, Ranjit; Ghosh, Arindam; Kumar, Vikram; Singh, Rajendra

    2016-03-01

    Temperature-dependent electrical transport characteristics of exfoliated graphene/GaN Schottky diodes are investigated and compared with conventional Ni/GaN Schottky diodes. The ideality factor of graphene/GaN and Ni/GaN diodes are measured to be 1.33 and 1.51, respectively, which is suggestive of comparatively higher thermionic emission current in graphene/GaN diode. The barrier height values for graphene/GaN diode obtained using thermionic emission model and Richardson plots are found to be 0.60 and 0.72 eV, respectively, which are higher than predicted barrier height ∼0.40 eV as per the Schottky-Mott model. The higher barrier height is attributed to hole doping of graphene due to graphene-Au interaction which shifts the Fermi level in graphene by ∼0.3 eV. The magnitude of flicker noise of graphene/GaN Schottky diode increases up to 175 K followed by its decrease at higher temperatures. This indicates that diffusion currents and barrier inhomogeneities dominate the electronic transport at lower and higher temperatures, respectively. The exfoliated graphene/GaN diode is found to have lower level of barrier inhomogeneities than conventional Ni/GaN diode, as well as earlier reported graphene/GaN diode fabricated using chemical vapor deposited graphene. The lesser barrier inhomogeneities in graphene/GaN diode results in lower flicker noise by 2 orders of magnitude as compared to Ni/GaN diode. Enhanced thermionic emission current, lower level of inhomogeneities, and reduced flicker noise suggests that graphene-GaN Schottky diodes may have the underlying trend for replacing metal-GaN Schottky diodes.

  4. Development and fabrication of insulator seals for thermionic diodes

    Science.gov (United States)

    Poirier, V. L.

    1972-01-01

    Eight different types of cermet seals for thermionic diodes were investigated: (1) 1 micron Al2O3 with Nb spheres; (2) 200 A Al2O3 with Nb spheres; (3) 1 micron Al2O3 with Nb 1% Zr spheres; (4) 200 A Al2O3 with Nb 1% Zr spheres; (5) Pure Y2O3 with Nb 1% Zr spheres; (6) Y2O3 3% ZrO2 with Nb 1% Zr spheres; (7) Y2O3 10% ZrO2 with Nb 1% Zr spheres; and (8) ZrO2 12% Y2O3 with Nb 1% Zr spheres. Investigations were made to determine the most favorable fabrication techniques and the effect of the bonding cycle, (length of bonding time and shutdown sequences). The analysis of the seals included tensile test, vacuum test, electrical test and metallurgical examination. At the conclusion of the development phase, 36 seals were fabricated for delivery for evaluation.

  5. System modeling for the advanced thermionic initiative single cell thermionic space nuclear reactor

    International Nuclear Information System (INIS)

    Lee, H.H.; Lewis, B.R.; Klein, A.C.; Pawlowski, R.A.

    1993-01-01

    Incore thermionic space reactor design concepts which operate in a nominal power output range of 20 to 40 kWe are described. Details of the neutronics, thermionic, shielding, and heat rejection performance are presented. Two different designs, ATI-Driven and ATI-Driverless, are considered. Comparison of the core overall performance of these two configurations are described. The comparison of these two cores includes the overall conversion efficiency, reactor mass, shield mass, and heat rejection mass. An overall system design has been developed to model the advanced incore thermionic energy conversion based nuclear reactor systems for space applications in this power range

  6. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    International Nuclear Information System (INIS)

    Onufriyev, Valery V.

    2001-01-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

  7. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    Science.gov (United States)

    Onufriyev, Valery. V.

    2001-02-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

  8. Transition to chaos in periodically driven thermionic diodes at low pressure

    International Nuclear Information System (INIS)

    Klinger, T.; Timm, R.; Piel, A.

    1992-01-01

    The static I(U) characteristic of thermionic diodes at mbar pressures shows a large hysteresis, which describes the transition from the 'anode-glow-mode' (AGM), with essentially negative plasma potential, to the 'temperature-limited-mode' (TLM), with positive plasma potential. Many features of these modes are also found in magnetic-box discharges with filament cathodes at pressures of 10 -2 -10 -1 Pa. Although these two pressure regimes are basically different concerning the transport properties (diffusion vs. free streaming), the elementary processes that establish the AGM in the low pressure regime are very similar to the high pressure regime. Ions are produced in that part of the anode sheath where the potential exceeds the ionization energy. The production rate is enhanced by multiple reflections of electrons between the magnetic fields of the permanent magnet array at the anode and the repulsive potential of the cathode plasma. Although the mean free path for charge exchange or elastic collisions substantially exceeds the anode-cathode distance, some few ions are stopped and trapped within the potential well of the virtual cathode. This accumulation of ions forms a cathodic plasma, which is essentially at cathode potential. Plasma formation in the anode sheath is suppressed as long as the ion production time is larger than the ion transit time through the sheath. These model ideas are supported by 1d-Particle-in-cell simulations using a modified PDP1-code. The AGM is attractive for studies of nonlinear dynamics because of its feedback processes and oscillations, which occur close to the hysteresis point. (author) 7 refs., 3 figs

  9. Thermionic photovoltaic energy converter

    Science.gov (United States)

    Chubb, D. L. (Inventor)

    1985-01-01

    A thermionic photovoltaic energy conversion device comprises a thermionic diode mounted within a hollow tubular photovoltaic converter. The thermionic diode maintains a cesium discharge for producing excited atoms that emit line radiation in the wavelength region of 850 nm to 890 nm. The photovoltaic converter is a silicon or gallium arsenide photovoltaic cell having bandgap energies in this same wavelength region for optimum cell efficiency.

  10. DOD's advanced thermionics program an overview

    International Nuclear Information System (INIS)

    Drake, T.R.

    1998-01-01

    The Defense Special Weapons Agency (DSWA) manages a congressionally mandated program in advanced thermionics research. Guided by congressional language to advance the state-of-the-art in the US and support the Integrated Solar Upper Stage (ISUS) program, DSWA efforts concentrate on four areas: an electrically testable design of a high-performance, in-core thermionic fuel element (TFE), the ISUS program, a microminiature thermionic converter and several modeling efforts. The DSWA domestic program is augmented by several small contracts with Russian institutes, awarded under the former TOPAZ International Program that the Ballistic Missile Defense Organization transferred to DSWA. The design effort at General Atomics will result in an electrically testable, multi-cell TFE for in-core conversion, involving system design and advanced collector and emitter technologies. For the ISUS program, DSWA funded a portion of the engine ground demonstration, including development of the power management system and the planar diodes. Current efforts supporting ISUS include continued diode testing and developing an advanced planar diode. The MTC program seeks to design a mass producable, close-spaced thermionic converter using integrated circuit technologies. Modeling and analysis at DSWA involves development of the Reactor System Mass with Thermionics estimation model (RSMASS-T), developing a new thermionic theory, and reviewing applications for the MTC technology. The Russian deliverables include several reports and associated hardware that describe many of its state-of-the-art thermionic technologies and processes

  11. High performance emitter for thermionic diode obtained by chemical vapor deposition

    International Nuclear Information System (INIS)

    Faron, R.; Bargues, M.; Durand, J.P.; Gillardeau, J.

    1973-01-01

    Vapor deposition process conditions presently known for tungsten and molybdenum (specifically the range of high temperatures and low pressures) permit the achievement of high performance thermionic emitters when used with an appropriate technology. One example of this uses the following series of successive vapor deposits, the five last vapor deposits constituting the fabrication of the emitting layer: Mo deposit for the formation of the nuclear fuel mechanical support; Mo deposit, which constitutes the sheath of the nuclear fuel; epitaxed Mo--W alloy deposit; epitaxed tungsten deposit; fine-grained tungsten deposit; and tungsten deposit with surface orientation according to plane (110)W. In accordance with vapor deposition techniques previously developed, such a sequence of deposits can easily be achieved with the same equipment, even without having to take out the part during the course of the process. (U.S.)

  12. Thermionics basic principles of electronics

    CERN Document Server

    Jenkins, J; Ashhurst, W

    2013-01-01

    Basic Principles of Electronics, Volume I : Thermionics serves as a textbook for students in physics. It focuses on thermionic devices. The book covers topics on electron dynamics, electron emission, and the themionic vacuum diode and triode. Power amplifiers, oscillators, and electronic measuring equipment are studied as well. The text will be of great use to physics and electronics students, and inventors.

  13. Alternative model of space-charge-limited thermionic current flow through a plasma

    Science.gov (United States)

    Campanell, M. D.

    2018-04-01

    It is widely assumed that thermionic current flow through a plasma is limited by a "space-charge-limited" (SCL) cathode sheath that consumes the hot cathode's negative bias and accelerates upstream ions into the cathode. Here, we formulate a fundamentally different current-limited mode. In the "inverse" mode, the potentials of both electrodes are above the plasma potential, so that the plasma ions are confined. The bias is consumed by the anode sheath. There is no potential gradient in the neutral plasma region from resistivity or presheath. The inverse cathode sheath pulls some thermoelectrons back to the cathode, thereby limiting the circuit current. Thermoelectrons entering the zero-field plasma region that undergo collisions may also be sent back to the cathode, further attenuating the circuit current. In planar geometry, the plasma density is shown to vary linearly across the electrode gap. A continuum kinetic planar plasma diode simulation model is set up to compare the properties of current modes with classical, conventional SCL, and inverse cathode sheaths. SCL modes can exist only if charge-exchange collisions are turned off in the potential well of the virtual cathode to prevent ion trapping. With the collisions, the current-limited equilibrium must be inverse. Inverse operating modes should therefore be present or possible in many plasma devices that rely on hot cathodes. Evidence from past experiments is discussed. The inverse mode may offer opportunities to minimize sputtering and power consumption that were not previously explored due to the common assumption of SCL sheaths.

  14. The advanced thermionics initiative...program update

    International Nuclear Information System (INIS)

    Lamp, T.R.; Donovan, B.D.

    1993-01-01

    The United States Air Force has had a long standing interest in thermionic space power dating back to the early 1960s when a heat pipe cooled thermionic converter was demonstrated through work at the predecessor to Wright Laboratory (WL). With the exception of the short hiatus in the mid-70s, Air Force thermionics work at Wright Laboratory has continued to the present time with thermionic technology programs including the burst power thermionic phase change concepts, heat pipe cooled planar diodes, and advanced in-core concept developments such as composite materials, insulators and oxygenation. The Advanced Thermionics Initiative (ATI) program was organized to integrate thermionic technology advances into a converter suitable for in-core reactor applications in the 10 to 40 kWe power range. As an advanced thermionics technology program, the charter and philosophy of the ATI program is to provide the needed advanced converter concepts in support of national thermionic space power programs

  15. Calculational models of close-spaced thermionic converters

    International Nuclear Information System (INIS)

    McVey, J.B.

    1983-01-01

    Two new calculational models have been developed in conjunction with the SAVTEC experimental program. These models have been used to analyze data from experimental close-spaced converters, providing values for spacing, electrode work functions, and converter efficiency. They have also been used to make performance predictions for such converters over a wide range of conditions. Both models are intended for use in the collisionless (Knudsen) regime. They differ from each other in that the simpler one uses a Langmuir-type formulation which only considers electrons emitted from the emitter. This approach is implemented in the LVD (Langmuir Vacuum Diode) computer program, which has the virtue of being both simple and fast. The more complex model also includes both Saha-Langmuir emission of positive cesium ions from the emitter and collector back emission. Computer implementation is by the KMD1 (Knudsen Mode Diode) program. The KMD1 model derives the particle distribution functions from the Vlasov equation. From these the particle densities are found for various interelectrode motive shapes. Substituting the particle densities into Poisson's equation gives a second order differential equation for potential. This equation can be integrated once analytically. The second integration, which gives the interelectrode motive, is performed numerically by the KMD1 program. This is complicated by the fact that the integrand is often singular at one end point of the integration interval. The program performs a transformation on the integrand to make it finite over the entire interval. Once the motive has been computed, the output voltage, current density, power density, and efficiency are found. The program is presently unable to operate when the ion richness ratio β is between about .8 and 1.0, due to the occurrence of oscillatory motives

  16. System modeling and reactor design studies of the Advanced Thermionic Initiative space nuclear reactor

    International Nuclear Information System (INIS)

    Lee, H.H.; Abdul-Hamid, S.; Klein, A.C.

    1996-01-01

    In-core thermionic space reactor design concepts that operate at a nominal power output range of 20 to 50 kW(electric) are described. Details of the neutronic, thermionic, thermal hydraulics, and shielding performance are presented. Because of the strong absorption of thermal neutrons by natural tungsten and the large amount of natural tungsten within the reactor core, two designs are considered. An overall system design code has been developed at Oregon State University to model advanced in-core thermionic energy conversion-based nuclear reactor systems for space applications. The results show that the driverless single-cell Advanced Thermionic Initiative (ATI) configuration, which does not have driver fuel rods, proved to be more efficient than the driven core, which has driver rods. The results also show that the inclusion of the true axial and radial power distribution decrease the overall conversion efficiency. The flattening of the radial power distribution by three different methods would lead to a higher efficiency. The results show that only one TFE works at the optimum emitter temperature; all other TFEs are off the optimum performance and result in a 40% decrease of the efficiency of the overall system. The true axial profile is significantly different as there is a considerable amount of neutron leakage out of the top and bottom of the reactor. The analysis reveals that the axial power profile actually has a chopped cosine shape. For this axial profile, the reactor core overall efficiency for the driverless ATI reactor version is found to be 5.84% with a total electrical power of 21.92 kW(electric). By considering the true axial power profile instead of the uniform power profile, each TFE loses ∼80 W(electric)

  17. Monte Carlo modelling of Schottky diode for rectenna simulation

    Science.gov (United States)

    Bernuchon, E.; Aniel, F.; Zerounian, N.; Grimault-Jacquin, A. S.

    2017-09-01

    Before designing a detector circuit, the electrical parameters extraction of the Schottky diode is a critical step. This article is based on a Monte-Carlo (MC) solver of the Boltzmann Transport Equation (BTE) including different transport mechanisms at the metal-semiconductor contact such as image force effect or tunneling. The weight of tunneling and thermionic current is quantified according to different degrees of tunneling modelling. The I-V characteristic highlights the dependence of the ideality factor and the current saturation with bias. Harmonic Balance (HB) simulation on a rectifier circuit within Advanced Design System (ADS) software shows that considering non-linear ideality factor and saturation current for the electrical model of the Schottky diode does not seem essential. Indeed, bias independent values extracted in forward regime on I-V curve are sufficient. However, the non-linear series resistance extracted from a small signal analysis (SSA) strongly influences the conversion efficiency at low input powers.

  18. Thermionic nuclear reactor systems

    International Nuclear Information System (INIS)

    Kennel, E.B.

    1986-01-01

    Thermionic nuclear reactors can be expected to be candidate space power supplies for power demands ranging from about ten kilowatts to several megawatts. The conventional ''ignited mode'' thermionic fuel element (TFE) is the basis for most reactor designs to date. Laboratory converters have been built and tested with efficiencies in the range of 7-12% for over 10,000 hours. Even longer lifetimes are projected. More advanced capabilities are potentially achievable in other modes of operation, such as the self-pulsed or unignited diode. Coupled with modest improvements in fuel and emitter material performance, the efficiency of an advanced thermionic conversion system can be extended to the 15-20% range. Advanced thermionic power systems are expected to be compatible with other advanced features such as: (1) Intrinsic subcritically under accident conditions, ensuring 100% safety upon launch abort; (2) Intrinsic low radiation levels during reactor shutdown, allowing manned servicing and/or rendezvous; (3) DC to DC power conditioning using lightweight power MOSFETS; and (4) AC output using pulsed converters

  19. Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

    Science.gov (United States)

    Navarro, Dondee; Herrera, Fernando; Zenitani, Hiroshi; Miura-Mattausch, Mitiko; Yorino, Naoto; Jürgen Mattausch, Hans; Takusagawa, Mamoru; Kobayashi, Jun; Hara, Masafumi

    2018-04-01

    A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current-voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures.

  20. Modeling transient thermal hydraulic behavior of a thermionic fuel element for nuclear space reactors

    International Nuclear Information System (INIS)

    Al-Kheliewi, A.S.; Klein, A.C.

    1994-01-01

    A transient code (TFETC) for determining the temperature distribution throughout the radial and axial positions of a thermionic fuel element (TFE) during changes in operating conditions has been successfully developed and tested. A fully implicit method is used to solve the system of equations for temperatures at each time step. Presently, TFETC has the ability to handle the following transients: startup, loss of flow accidents, and shutdown. The code has been applied to the startup of the ATI single cell configuration which appears to start up and shut down in an orderly and reasonable fashion. No unexpected transient features were observed. The TFE also appears to function robustly under loss of flow accident conditions. It appears hat sufficient time is available to shut the reactor down safely without melting point the fuel. The model shows that during a complete loss of flow accident (without shutdown) the coolant reaches its boiling point in approximately 35 seconds. The fuel may exceed its melting point after this time as the NaK coolant will boil if the reactor is not shut down. For 1/2, 1/3, and 1/4 pump failures, the fuel temperatures never exceed the fuel melting point even if the reactor is not shut down

  1. Radioisotope thermionic converters for space applications

    International Nuclear Information System (INIS)

    Miskolczy, G.; Lieb, D.P.

    1990-01-01

    The recent history of radioisotope thermionics is reviewed, with emphasis on the U.S. programs, and the prospects for the future are assessed. In radioisotope thermionic converters the emitter heat is generated by the decay of a radioactive isotope. The thermionic converter emitter is mounted directly on a capsule containing the isotope. The rest of the capsule is generally insulated to reduce thermal loss. The development of isotope-fueled thermionic power systems for space application has been pursued since the late 1950's. The U.S. effort was concentrated on modular systems with alpha emitters as the isotope heat source. In the SNAP-13 program, the heat sources were Cerium isotopes and each module produced about 100 watts. The converters were planar diodes and the capsule was insulated with multi-foil insulation

  2. ANALYTICAL MODELING OF ELECTRON BACK-BOMBARDMENT INDUCED CURRENT INCREASE IN UN-GATED THERMIONIC CATHODE RF GUNS

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P. [Fermilab; Sun, Y. [Argonne; Harris, J. R. [AFRL, NM; Lewellen, J. W. [Los Alamos Natl. Lab.

    2016-09-28

    In this paper we derive analytical expressions for the output current of an un-gated thermionic cathode RF gun in the presence of back-bombardment heating. We provide a brief overview of back-bombardment theory and discuss comparisons between the analytical back-bombardment predictions and simulation models. We then derive an expression for the output current as a function of the RF repetition rate and discuss relationships between back-bombardment, fieldenhancement, and output current. We discuss in detail the relevant approximations and then provide predictions about how the output current should vary as a function of repetition rate for some given system configurations.

  3. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  4. Analytic model of Applied-B ion diode impedance behavior

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W. Jr.

    1987-01-01

    An empirical analysis of impedance data from Applied-B ion diodes used in seven inertial confinement fusion research experiments was published recently. The diodes all operated with impedance values well below the Child's-law value. The analysis uncovered an unusual unifying relationship among data from the different experiments. The analysis suggested that closure of the anode-cathode gap by electrode plasma was not a dominant factor in the experiments, but was not able to elaborate the underlying physics. Here we present a new analytic model of Applied-B ion diodes coupled to accelerators. A critical feature of the diode model is based on magnetic insulation theory. The model successfully describes impedance behavior of these diodes and supports stimulating new viewpoints of the physics of Applied-B ion diode operation

  5. Thermionic cogeneration burner design

    Science.gov (United States)

    Miskolczy, G.; Goodale, D.; Moffat, A. L.; Morgan, D. T.

    Since thermionic converters receive heat at very high temperatures (approximately 1800 K) and reject heat at moderately high temperatures (approximately 800 K), they are useful for cogeneration applications involving high temperature processes. The electric power from thermionic converters is produced as a high amperage, low-voltage direct current. An ideal cogeneration application would be to utilize the reject heat at the collector temperature and the electricity without power conditioning. A cogeneration application in the edible oil industry fulfills both of these requirements since both direct heat and hydrogen gas are required in the hydrogenation of the oils. In this application, the low-voltage direct current would be used in a hydrogen electrolyzer.

  6. NUCLEAR THERMIONIC SPACE POWER SYSTEMS

    Energy Technology Data Exchange (ETDEWEB)

    Howard, R. C.; Rasor, N. S.

    1963-03-15

    The various concepts for utilizing thermionic conversion in space reactor power plants are described and evaluated. The problems (and progress toward their solution) of the in-core concept, particularly, are considered. Progress in thermionic conversion technology is then reviewed from both the hardware and research points of view. Anticipated progress in thermionic conversion and the possible consequences for the performance of electrical propulsion systems are summarized. 46 references. (D.C.W.)

  7. CID thermionic gun system

    International Nuclear Information System (INIS)

    Koontz, R.F.

    1981-10-01

    A new high-current thermionic gun has been installed on the CID injector at SLAC and brought into operation. The gun and pulser system generate three nanosecond pulses of about six amps peak which, when bunched in the subharmonic buncher system, produce in excess of 10 11 electrons in a single S-band accelerated bunch. Preliminary operation of the gun is described, and details of the avalanche cathode drive pulser are presented

  8. CID thermionic gun system

    International Nuclear Information System (INIS)

    Koontz, R.F.

    1982-01-01

    A new high-current thermionic gun has been installed on the CID injector at SLAC and brought into operation. The gun and pulser system generate three nanosecond pulses of about six amps peak which, when bunched in the subharmonic buncher system, produce in excess of 10 11 electrons in a single S-band accelerated bunch. Preliminary operation of the gun is described, and details of the avalanche cathode drive pulser are presented

  9. Isotopic Thermionic Generator

    International Nuclear Information System (INIS)

    Clemot, M.; Devin, B.; Durand, J.P.

    1967-01-01

    This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [fr

  10. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  11. Photophysics of fullerenes: Thermionic emission

    International Nuclear Information System (INIS)

    Compton, R.N.; Tuinman, A.A.; Huang, J.

    1996-01-01

    Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C 60 excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs + is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C 60 in the energy range from 8 to 12 eV results in C 60 anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements

  12. Photophysics of fullerenes: Thermionic emission

    Energy Technology Data Exchange (ETDEWEB)

    Compton, R.N. [Univ. of Tennessee, Knoxville, TN (United States)]|[Oak Ridge National Lab., TN (United States); Tuinman, A.A. [Univ. of Tennessee, Knoxville, TN (United States); Huang, J. [Ames Lab., IA (United States)

    1996-09-01

    Multiphoton ionization of fullerenes using long-pulse length lasers occurs mainly through vibrational autoionization. In many cases the laser ionization can be described as thermionic in analogy to the boiling off of electrons from a filament. Thermionic emission manifests itself as a delayed emission of electrons following pulsed laser excitation. Klots has employed quasiequilibrium theory to calculate rate constants for thermionic emission from fullerenes which seem to quantitatively account for the observed delayed emission times and the measured electron energy distributions. The theory of Klots also accounts for the thermionic emission of C{sub 60} excited by a low power CW Argon Ion laser. Recently Klots and Compton have reviewed the evidence for thermionic emission from small aggregates where mention was also made of experiments designed to determine the effects of externally applied electric fields on thermionic emission rates. The authors have measured the fullerene ion intensity as a function of the applied electric field and normalized this signal to that produced by single photon ionization of an atom in order to correct for all collection efficiency artifacts. The increase in fullerene ion signal relative to that of Cs{sup +} is attributed to field enhanced thermionic emission. From the slope of the Schottky plot they obtain a temperature of approximately 1,000 K. This temperature is comparable to but smaller than that estimated from measurements of the electron kinetic energies. This result for field enhanced thermionic emission is discussed further by Klots and Compton. Thermionic emission from neutral clusters has long been known for autodetachment from highly excited negative ions. Similarly, electron attachment to C{sub 60} in the energy range from 8 to 12 eV results in C{sub 60} anions with lifetimes in the range of microseconds. Quasiequilibrium theory (QET) calculations are in reasonable accord with these measurements.

  13. Photon enhanced thermionic emission

    Science.gov (United States)

    Schwede, Jared; Melosh, Nicholas; Shen, Zhixun

    2014-10-07

    Photon Enhanced Thermionic Emission (PETE) is exploited to provide improved efficiency for radiant energy conversion. A hot (greater than 200.degree. C.) semiconductor cathode is illuminated such that it emits electrons. Because the cathode is hot, significantly more electrons are emitted than would be emitted from a room temperature (or colder) cathode under the same illumination conditions. As a result of this increased electron emission, the energy conversion efficiency can be significantly increased relative to a conventional photovoltaic device. In PETE, the cathode electrons can be (and typically are) thermalized with respect to the cathode. As a result, PETE does not rely on emission of non-thermalized electrons, and is significantly easier to implement than hot-carrier emission approaches.

  14. Advanced thermionic reactor systems design code

    International Nuclear Information System (INIS)

    Lewis, B.R.; Pawlowski, R.A.; Greek, K.J.; Klein, A.C.

    1991-01-01

    An overall systems design code is under development to model an advanced in-core thermionic nuclear reactor system for space applications at power levels of 10 to 50 kWe. The design code is written in an object-oriented programming environment that allows the use of a series of design modules, each of which is responsible for the determination of specific system parameters. The code modules include a neutronics and core criticality module, a core thermal hydraulics module, a thermionic fuel element performance module, a radiation shielding module, a module for waste heat transfer and rejection, and modules for power conditioning and control. The neutronics and core criticality module determines critical core size, core lifetime, and shutdown margins using the criticality calculation capability of the Monte Carlo Neutron and Photon Transport Code System (MCNP). The remaining modules utilize results of the MCNP analysis along with FORTRAN programming to predict the overall system performance

  15. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  16. A transient model of a cesium-barium diode

    International Nuclear Information System (INIS)

    Luke, J.R.; El-Genk, M.S.

    1995-01-01

    In this work a transient model of a Cs-Ba diode is developed, and a series of experiments is performed using a diode equipped with Langmuir probes. The Langmuir probe data show that the electron energy distribution is non-Maxwellian at low discharge currents, indicating the presence of an electron beam from the emitter. Experimental results also showed that the plasma properties are non-homogeneous across the 1 mm diode gap; the electron temperature and plasma potential were higher near the emitter and the plasma density was higher near the collector. Experimental evidence is presented to show that the discharge contracts to a filament below the maximum thermal emission current

  17. Beta Radiation Enhanced Thermionic Emission from Diamond Thin Films

    Directory of Open Access Journals (Sweden)

    Alex Croot

    2017-11-01

    Full Text Available Diamond-based thermionic emission devices could provide a means to produce clean and renewable energy through direct heat-to-electrical energy conversion. Hindering progress of the technology are the thermionic output current and threshold temperature of the emitter cathode. In this report, we study the effects on thermionic emission caused by in situ exposure of the diamond cathode to beta radiation. Nitrogen-doped diamond thin films were grown by microwave plasma chemical vapor deposition on molybdenum substrates. The hydrogen-terminated nanocrystalline diamond was studied using a vacuum diode setup with a 63Ni beta radiation source-embedded anode, which produced a 2.7-fold increase in emission current compared to a 59Ni-embedded control. The emission threshold temperature was also examined to further assess the enhancement of thermionic emission, with 63Ni lowering the threshold temperature by an average of 58 ± 11 °C compared to the 59Ni control. Various mechanisms for the enhancement are discussed, with a satisfactory explanation remaining elusive. Nevertheless, one possibility is discussed involving excitation of preexisting conduction band electrons that may skew their energy distribution toward higher energies.

  18. Heat-pipe thermionic reactor concept

    DEFF Research Database (Denmark)

    Storm Pedersen, E.

    1967-01-01

    Main components are reactor core, heat pipe, thermionic converter, secondary cooling system, and waste heat radiator; thermal power generated in reactor core is transported by heat pipes to thermionic converters located outside reactor core behind radiation shield; thermionic emitters are in direct...

  19. Modelling and Simulation of the Diode Split Transformer

    DEFF Research Database (Denmark)

    Østergaard, Leo

    a significant influence on the picture quality. The most critical component is undoubtedly the diode split transformer (DST). Therefore, if developing a simulation model of the DST is possible, a significant step has been taken in the attempt to model the entire horizontal deflection circuit and to obtain...

  20. Mathematical modeling of a passively Q-switched diode laser

    International Nuclear Information System (INIS)

    Abdul Ghani, B.; Hammadi, M.

    2009-11-01

    A mathematical model describing the dynamic emission of the intracavity frequency doubling (IFD) of a gain-switched InGaAs/GaAs/KTP and a gain-switched mode-locked two-sections tapered ridge-waveguide InGaAs/GaAs diode laser has been presented. The IFD of a gain-switched and a gain-switched mode-locked two-sections diode laser is modeled where one section is electrically pumped to proved gain while the second section is unpumped (reverse biased) to provide a saturable absorber. (author)

  1. Thermodynamics of photon-enhanced thermionic emission solar cells

    International Nuclear Information System (INIS)

    Reck, Kasper; Hansen, Ole

    2014-01-01

    Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE solar cells including an analysis of the entropy production due to thermionic emission of general validity. The model is applied to find the maximum efficiency of a PETE cell for given cathode and anode work functions and temperatures

  2. Materials for thermionic energy converters

    NARCIS (Netherlands)

    Wolff, L.R.; Hermans, J.M.; Adriaansen, J.K.M.; Gubbels, G.H.M.; Vincenzini, P.

    1987-01-01

    This paper deals with the design and construction of a combustion heated Thermionic Energy Converter (TEC). Main components of this TEC are: 1. A ''Hot Shell'' protecting the TEC from the combustion environment 2. A ''Ceramic Seal'' electrically insulating the emitter from the collector 3. A

  3. Beam emittance measurement from CERN thermionic guns

    International Nuclear Information System (INIS)

    Kester, O.; Rao, R.; Rinolfi, L.

    1992-01-01

    In the LEP Injector Linacs (LIL) a thermionic gun provides electron beams with different peak intensities at an energy of 80 keV. The beam emittances were estimated from the EGUN programme. Since the gun is of triode type, the main contribution to the emittance comes from the grid. The simulation programme does not model the real geometry by assuming a cylindrical symmetry, while the grid does not have such symmetry. A Gun Test Facility (GTF), allowing emittance measurements, based on the 3-gradients-method was installed. The experimental results are presented. (author) 6 refs.; 6 figs

  4. Current transport across the pentacene/CVD-grown graphene interface for diode applications

    International Nuclear Information System (INIS)

    Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

    2012-01-01

    We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole-Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole-Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole-Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface. (paper)

  5. Current transport across the pentacene/CVD-grown graphene interface for diode applications.

    Science.gov (United States)

    Berke, K; Tongay, S; McCarthy, M A; Rinzler, A G; Appleton, B R; Hebard, A F

    2012-06-27

    We investigate the electronic transport properties across the pentacene/graphene interface. Current transport across the pentacene/graphene interface is found to be strikingly different from transport across pentacene/HOPG and pentacene/Cu interfaces. At low voltages, diodes using graphene as a bottom electrode display Poole–Frenkel emission, while diodes with HOPG and Cu electrodes are dominated by thermionic emission. At high voltages conduction is dominated by Poole–Frenkel emission for all three junctions. We propose that current across these interfaces can be accurately modeled by a combination of thermionic and Poole–Frenkel emission. Results presented not only suggest that graphene provides low resistive contacts to pentacene where a flat-laying orientation of pentacene and transparent metal electrodes are desired but also provides further understanding of the physics at the organic semiconductor/graphene interface.

  6. The Pierce-diode approximation to the single-emitter plasma diode

    International Nuclear Information System (INIS)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-01-01

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

  7. Large-signal modeling method for power FETs and diodes

    Energy Technology Data Exchange (ETDEWEB)

    Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping, E-mail: sunlu_1019@126.co [School of Electromechanical Engineering, Xidian University, Xi' an 710071 (China)

    2009-06-01

    Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

  8. Large-signal modeling method for power FETs and diodes

    International Nuclear Information System (INIS)

    Sun Lu; Wang Jiali; Wang Shan; Li Xuezheng; Shi Hui; Wang Na; Guo Shengping

    2009-01-01

    Under a large signal drive level, a frequency domain black box model of the nonlinear scattering function is introduced into power FETs and diodes. A time domain measurement system and a calibration method based on a digital oscilloscope are designed to extract the nonlinear scattering function of semiconductor devices. The extracted models can reflect the real electrical performance of semiconductor devices and propose a new large-signal model to the design of microwave semiconductor circuits.

  9. Thermionic source design

    International Nuclear Information System (INIS)

    True, R.

    1988-01-01

    This paper describes codes and methods used to design high quality diode and gridded Pierce guns. Such guns are used in travelling wave tubes, klystrons, linear accelerators, free-electron lasers, and other E-beam devices. PC code TMLBMC is discussed. Either this code (or PRCGUN) can be used to obtain a preliminary gun design. Two methods useful in determining the electrode contours external to the beam (focus electrode and anode with hole) are presented. These are based on matching the fields along the beam edge and in the center of the Pierce gun. An analytic method, and a numerical method based on the solution of Laplace's equation (in combination with data from TMLBMC), are presented

  10. Thermodynamics of photon-enhanced thermionic emission solar cells

    DEFF Research Database (Denmark)

    Reck, Kasper; Hansen, Ole

    2014-01-01

    Photon-enhanced thermionic emission (PETE) cells in which direct photon energy as well as thermal energy can be harvested have recently been suggested as a new candidate for high efficiency solar cells. Here, we present an analytic thermodynamical model for evaluation of the efficiency of PETE...

  11. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  12. NASA thermionic-conversion program

    International Nuclear Information System (INIS)

    Morris, J.F.

    1977-01-01

    NASA's program for applied research and technology (ART) in thermionic energy conversion (TEC) has made worthwhile contributions in a relatively short time: Many of these accomplishments are incremental, yet important. And their integration has yielded gains in performance as well as in the knowledge necessary to point productive directions for future work. Both promise and problems derive from the degrees of freedom allowed by the current programmatic emphasis on out-of-core thermionics. Materials and designs previously prohibited by in-core nucleonics and geometries now offer new potentialities. But as a result a major TEC-ART responsibility is the efficient reduction of the glitter of diverse possibilities to the hard glint of reality. As always high-temperature material effects are crucial to the level and duration of TEC performance: New electrodes must increase and maintain power output regardless of emitter-vapor deposition on collectors. They must also serve compatibly with hot-shell alloys. And while space TEC must face high-temperature vaporization problems externally as well as internally, terrestrial TEC must tolerate hot corrosive atmospheres outside and near-vacuum inside. Furthermore, some modes for decreasing interelectrode losses appear to require rather demanding converter geometries to produce practical power densities. In these areas and others significant progress is being made in the NASA TEC-ART Program

  13. Hybrid thermionic-photovoltaic converter

    Energy Technology Data Exchange (ETDEWEB)

    Datas, A. [Instituto de Energía Solar, Universidad Politécnica de Madrid, 28040 Madrid (Spain)

    2016-04-04

    A conceptual device for the direct conversion of heat into electricity is presented. This concept hybridizes thermionic (TI) and thermophotovoltaic (TPV) energy conversion in a single thermionic-photovoltaic (TIPV) solid-state device. This device transforms into electricity both the electron and photon fluxes emitted by an incandescent surface. This letter presents an idealized analysis of this device in order to determine its theoretical potential. According to this analysis, the key advantage of this converter, with respect to either TPV or TI, is the higher power density in an extended temperature range. For low temperatures, TIPV performs like TPV due to the negligible electron flux. On the contrary, for high temperatures, TIPV performs like TI due to the great enhancement of the electron flux, which overshadows the photon flux contribution. At the intermediate temperatures, ∼1650 K in the case of this particular study, I show that the power density potential of TIPV converter is twice as great as that of TPV and TI. The greatest impact concerns applications in which the temperature varies in a relatively wide range, for which averaged power density enhancement above 500% is attainable.

  14. Thermionic detection of the ionic fragments of continiuum-state pair absorption systems

    International Nuclear Information System (INIS)

    Hotop, R.; Niemax, K.; Richter, J.; Weber, K.H.

    1981-01-01

    Using a thermionic diode we have detected the ionic fragments formed by associative ionization and dissociation after continuum-state pair absorption processes in Cs-Cs and Cs-K systems. Assuming an ionization probability of unity of the excited species and calibrating the pair absorption bands by taking into account the known photoionization cross section of the atoms we found excellent agreement with data from classical absorption measurements. (orig.)

  15. Modelling of optoelectronic circuits based on resonant tunneling diodes

    Science.gov (United States)

    Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

    2017-08-01

    Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

  16. Non-laminar flow model for the impedance of a rod-pinch diode

    International Nuclear Information System (INIS)

    Ottinger, Paul F.; Schumer, Joseph W.; Strasburg, Sean D.; Swanekamp, Stephen B.; Oliver, Bryan V.

    2002-01-01

    A previous laminar flow model for the rod-pinch diode is extended to include a transverse pressure term to study the effects of non-laminar flow. The non-laminar nature of the flow has a significant impact on the diode impedance. Results show that the introduction of the transverse pressure decreases the diode impedance predicted by the model bringing it into better agreement with experimental data

  17. MATERIALS REQUIREMENTS FOR THERMIONIC ENERGY CONVERSION

    Energy Technology Data Exchange (ETDEWEB)

    Allen, R. C.; Skeen, C. H.

    1963-03-15

    The fundamentals of the thermionic energy conversion and its potential applications are reviewed. Materials problems associated with thermionic emitters are considered in relation to the following: work function; emissivity; vaporization; thermal, mechanical, and electrical properties; chemical stability; permeation; and stability under nuclear radiation. Cesium purity and materials suitable for collectors, electrical leads, support structures, insulators, and seals are also discussed. Experimental work on problems involved is reviewed. It is concluded that significant developments have occurred recently in all areas of thermionic energy conversion. (40 references) (A.G.W.)

  18. A mathematical modeling framework to evaluate the performance of single diode and double diode based SPV systems

    Directory of Open Access Journals (Sweden)

    Sangram Bana

    2016-11-01

    Full Text Available In order to predict the performance of a PV system, a reliable and accurate simulation design of PV systems before being installed is a necessity. The present study concerns the development of single and double diode model of solar PV system and ensures the best suited model under specific environmental condition for accurate performance prediction. The information provided in the manufacturers’ data sheet is not sufficient for developing a Simulink based single and double diode models of PV module. These parameters are crucial to predict accurate performance of a PV module. These parameters of the proposed solar PV models have been calculated using an efficient iterative technique. This paper compares the simulation results of both the models with manufacturer’s data sheet to investigate the accuracy and validity. A MATLAB/Simulink based comparative performance analysis of these models under inconsistent atmospheric conditions and the effect of variations in model parameters has been carried out. Despite the simplicity, these models are highly sensitive and respond to a slight variation in temperature and insolation. It is observed that double diode PV model is more accurate under low intensity insolation or shading condition. The performance evaluation of the models under present study will be helpful to understand the I-V curves, which will enable us in predicting the solar PV system power production under variable input conditions.

  19. Thermionic integrated circuits: electronics for hostile environments

    International Nuclear Information System (INIS)

    Lynn, D.K.; McCormick, J.B.; MacRoberts, M.D.J.; Wilde, D.K.; Dooley, G.R.; Brown, D.R.

    1985-01-01

    Thermionic integrated circuits combine vacuum tube technology with integrated circuit techniques to form integrated vacuum triode circuits. These circuits are capable of extended operation in both high-temperature and high-radiation environments

  20. HEAT Sensor: Harsh Environment Adaptable Thermionic Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Limb, Scott J. [Palo Alto Research Center, Palo Alto, CA (United States)

    2016-05-31

    This document is the final report for the “HARSH ENVIRONMENT ADAPTABLE THERMIONIC SENSOR” project under NETL’s Crosscutting contract DE-FE0013062. This report addresses sensors that can be made with thermionic thin films along with the required high temperature hermetic packaging process. These sensors can be placed in harsh high temperature environments and potentially be wireless and self-powered.

  1. A new concept of thermionic converter

    International Nuclear Information System (INIS)

    Musa, G.

    1978-10-01

    The parameters of a new type of thermionic converter which has a number of concentric electrodes, is computed. The obtained theoretical efficiency of this new type of converter is nearly the efficiency of the ideal thermionic converter. The obtained results are explained by the reduction of the radiation loss from the emitter due to the electrode configuration. Efficiencies as high as 20% are expected from this type of converter now in construction. (author)

  2. Investigation of significantly high barrier height in Cu/GaN Schottky diode

    Directory of Open Access Journals (Sweden)

    Manjari Garg

    2016-01-01

    Full Text Available Current-voltage (I-V measurements combined with analytical calculations have been used to explain mechanisms for forward-bias current flow in Copper (Cu Schottky diodes fabricated on Gallium Nitride (GaN epitaxial films. An ideality factor of 1.7 was found at room temperature (RT, which indicated deviation from thermionic emission (TE mechanism for current flow in the Schottky diode. Instead the current transport was better explained using the thermionic field-emission (TFE mechanism. A high barrier height of 1.19 eV was obtained at room temperature. X-ray photoelectron spectroscopy (XPS was used to investigate the plausible reason for observing Schottky barrier height (SBH that is significantly higher than as predicted by the Schottky-Mott model for Cu/GaN diodes. XPS measurements revealed the presence of an ultrathin cuprous oxide (Cu2O layer at the interface between Cu and GaN. With Cu2O acting as a degenerate p-type semiconductor with high work function of 5.36 eV, a high barrier height of 1.19 eV is obtained for the Cu/Cu2O/GaN Schottky diode. Moreover, the ideality factor and barrier height were found to be temperature dependent, implying spatial inhomogeneity of barrier height at the metal semiconductor interface.

  3. Thermionic detector with multiple layered ionization source

    International Nuclear Information System (INIS)

    Patterson, P. L.

    1985-01-01

    Method and apparatus for analyzing specific chemical substances in a gaseous environment comprises a thermionic source formed of multiple layers of ceramic material composition, an electrical current instrumentality for heating the thermionic source to operating temperatures in the range of 100 0 C. to 1000 0 C., an instrumentality for exposing the surface of the thermionic source to contact with the specific chemical substances for the purpose of forming gas phase ionization of the substances by a process of electrical charge emission from the surface, a collector electrode disposed adjacent to the thermiomic source, an instrumentality for biasing the thermionic source at an electrical potential which causes the gas phase ions to move toward the collector, and an instrumentality for measuring the ion current arriving at the collector. The thermionic source is constructed of a metallic heater element molded inside a sub-layer of hardened ceramic cement material impregnated with a metallic compound additive which is non-corrosive to the heater element during operation. The sub-layer is further covered by a surface-layer formed of hardened ceramic cement material impregnated with an alkali metal compound in a manner that eliminates corrosive contact of the alkali compounds with the heater element. The sub-layer further protects the heater element from contact with gas environments which may be corrosive. The specific ionization of different chemical substances is varied over a wide range by changing the composition and temperature of the thermionic source, and by changing the composition of the gas environment

  4. Electron inertia effects for an electron fluid model by the applied-B ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, A V; Levchenko, S V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

    1997-12-31

    Numerical calculations within the framework of the one-dimensional vortex-like electron fluid model in applied-B ion diodes, taking account the electron inertia effects, are presented. The existence of the additional relation between the magnetic field and the electric potential offers an opportunity to reduce the ion diode problem to the system of the algebraic equations for the constants introduced. The ion current density in an ion diode is determined only by the magnetic flux cut out by the virtual cathode. As an illustration, the ion diode impedance for the KALIF device was calculated. (author). 2 figs., 6 refs.

  5. Modeling of SVM Diode Clamping Three-Level Inverter Connected to Grid

    DEFF Research Database (Denmark)

    Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

    2011-01-01

    PLECS is used to model the diode clamping three-level inverter connected to grid and good results are obtained. First the output voltage SVM is described for diode clamping three-level inverter with loads connected to Y. Then the output voltage SVM of diode clamping three-level inverter is simply...... analyzed with loads connected to △. But it will be further researched in the future. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping three-level inverter is briefly presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS...... is very powerful tool to real power circuits and it is very easy to simulate them. They have also verified that SVM control strategy is feasible to control the diode clamping three-level inverter....

  6. Thermal activation of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height

    International Nuclear Information System (INIS)

    Guo-Ping, Ru; Rong, Yu; Yu-Long, Jiang; Gang, Ruan

    2010-01-01

    This paper investigates the thermal activation behaviour of current in an inhomogeneous Schottky diode with a Gaussian distribution of barrier height by numerical simulation. The analytical Gaussian distribution model predicted that the I-V-T curves may intersect with the possibility of the negative thermal activation of current, but may be contradictory to the thermionic emission mechanism in a Schottky diode. It shows that the cause of the unphysical phenomenon is related to the incorrect calculation of current across very low barriers. It proposes that junction voltage V j , excluding the voltage drop across series resistance from the external bias, is a crucial parameter for correct calculation of the current across very low barriers. For correctly employing the thermionic emission model, V j needs to be smaller than the barrier height ø. With proper scheme of series resistance connection where the condition of V j > ø is guaranteed, I-V-T curves of an inhomogeneous Schottky diode with a Gaussian distribution of barrier height have been simulated, which demonstrate normal thermal activation. Although the calculated results exclude the intersecting possibility of I-V-T curves with an assumption of temperature-independent series resistance, it shows that the intersecting is possible when the series resistance has a positive temperature coefficient. Finally, the comparison of our numerical and analytical results indicates that the analytical Gaussian distribution model is valid and accurate in analysing I-V-T curves only for small barrier height inhomogeneity. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. Wideband Small-Signal Input dq Admittance Modeling of Six-Pulse Diode Rectifiers

    DEFF Research Database (Denmark)

    Yue, Xiaolong; Wang, Xiongfei; Blaabjerg, Frede

    2018-01-01

    This paper studies the wideband small-signal input dq admittance of six-pulse diode rectifiers. Considering the frequency coupling introduced by ripple frequency harmonics of d-and q-channel switching function, the proposed model successfully predicts the small-signal input dq admittance of six......-pulse diode rectifiers in high frequency regions that existing models fail to explain. Simulation and experimental results verify the accuracy of the proposed model....

  8. Thermionic reactors for space nuclear power

    Science.gov (United States)

    Homeyer, W. G.; Merrill, M. H.; Holland, J. W.; Fisher, C. R.; Allen, D. T.

    1985-01-01

    Thermionic reactor designs for a variety of space power applications spanning the range from 5 kWe to 3 MWe are described. In all of these reactors, nuclear heat is converted directly to electrical energy in thermionic fuel elements (TFEs). A circulating reactor coolant carries heat from the core of TFEs directly to a heat rejection radiator system. The recent design of a thermionic reactor to meet the SP-100 requirements is emphasized. Design studies of reactors at other power levels show that the same TFE can be used over a broad range in power, and that design modifications can extend the range to many megawatts. The design of the SP-100 TFE is similar to that of TFEs operated successfully in test reactors, but with design improvements to extend the operating lifetime to seven years.

  9. Zener Diode Compact Model Parameter Extraction Using Xyce-Dakota Optimization.

    Energy Technology Data Exchange (ETDEWEB)

    Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wilcox, Ian Zachary [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandoval, Andrew J [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Reza, Shahed [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    This report presents a detailed process for compact model parameter extraction for DC circuit Zener diodes. Following the traditional approach of Zener diode parameter extraction, circuit model representation is defined and then used to capture the different operational regions of a real diode's electrical behavior. The circuit model contains 9 parameters represented by resistors and characteristic diodes as circuit model elements. The process of initial parameter extraction, the identification of parameter values for the circuit model elements, is presented in a way that isolates the dependencies between certain electrical parameters and highlights both the empirical nature of the extraction and portions of the real diode physical behavior which of the parameters are intended to represent. Optimization of the parameters, a necessary part of a robost parameter extraction process, is demonstrated using a 'Xyce-Dakota' workflow, discussed in more detail in the report. Among other realizations during this systematic approach of electrical model parameter extraction, non-physical solutions are possible and can be difficult to avoid because of the interdependencies between the different parameters. The process steps described are fairly general and can be leveraged for other types of semiconductor device model extractions. Also included in the report are recommendations for experiment setups for generating optimum dataset for model extraction and the Parameter Identification and Ranking Table (PIRT) for Zener diodes.

  10. Modelling ionising radiation induced defect generation in bipolar oxides with gated diodes

    International Nuclear Information System (INIS)

    Barnaby, H.J.; Cirba, C.; Schrimpf, R.D.; Kosier, St.; Fouillat, P.; Montagner, X.

    1999-01-01

    Radiation-induced oxide defects that degrade electrical characteristics of bipolar junction transistor (BJTs) can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation. (authors)

  11. Device model investigation of bilayer organic light emitting diodes

    International Nuclear Information System (INIS)

    Crone, B. K.; Davids, P. S.; Campbell, I. H.; Smith, D. L.

    2000-01-01

    Organic materials that have desirable luminescence properties, such as a favorable emission spectrum and high luminescence efficiency, are not necessarily suitable for single layer organic light-emitting diodes (LEDs) because the material may have unequal carrier mobilities or contact limited injection properties. As a result, single layer LEDs made from such organic materials are inefficient. In this article, we present device model calculations of single layer and bilayer organic LED characteristics that demonstrate the improvements in device performance that can occur in bilayer devices. We first consider an organic material where the mobilities of the electrons and holes are significantly different. The role of the bilayer structure in this case is to move the recombination away from the electrode that injects the low mobility carrier. We then consider an organic material with equal electron and hole mobilities but where it is not possible to make a good contact for one carrier type, say electrons. The role of a bilayer structure in this case is to prevent the holes from traversing the device without recombining. In both cases, single layer device limitations can be overcome by employing a two organic layer structure. The results are discussed using the calculated spatial variation of the carrier densities, electric field, and recombination rate density in the structures. (c) 2000 American Institute of Physics

  12. High temperature cogeneration with thermionic burners

    International Nuclear Information System (INIS)

    Fitzpatrick, G.O.; Britt, E.J.; Dick, R.S.

    1981-01-01

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging

  13. High temperature cogeneration with thermionic burners

    Science.gov (United States)

    Fitzpatrick, G. O.; Britt, E. J.; Dick, R. S.

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging.

  14. Solar electron source and thermionic solar cell

    Directory of Open Access Journals (Sweden)

    Parham Yaghoobi

    2012-12-01

    Full Text Available Common solar technologies are either photovoltaic/thermophotovoltaic, or use indirect methods of electricity generation such as boiling water for a steam turbine. Thermionic energy conversion based on the emission of electrons from a hot cathode into vacuum and their collection by an anode is also a promising route. However, thermionic solar conversion is extremely challenging as the sunlight intensity is too low for heating a conventional cathode to thermionic emission temperatures in a practical manner. Therefore, compared to other technologies, little has been done in this area, and the devices have been mainly limited to large experimental apparatus investigated for space power applications. Based on a recently observed “Heat Trap” effect in carbon nanotube arrays, allowing their efficient heating with low-power light, we report the first compact thermionic solar cell. Even using a simple off-the-shelf focusing lens, the device delivered over 1 V across a load. The device also shows intrinsic storage capacity.

  15. Thermionic cogeneration burner assessment study. Third quarterly technical progress report, April-June, 1983

    Energy Technology Data Exchange (ETDEWEB)

    1983-01-01

    The specific tasks of this study are to mathematically model the thermionic cogeneration burner, experimentally confirm the projected energy flows in a thermal mock-up, make a cost estimate of the burner, including manufacturing, installation and maintenance, review industries in general and determine what groups of industries would be able to use the electrical power generated in the process, select one or more industries out of those for an in-depth study, including determination of the performance required for a thermionic cogeneration system to be competitive in that industry. Progress is reported. (WHK)

  16. Electrical properties of Au/perylene-monoimide/p-Si Schottky diode

    International Nuclear Information System (INIS)

    Yüksel, Ö.F.; Tuğluoğlu, N.; Gülveren, B.; Şafak, H.; Kuş, M.

    2013-01-01

    Graphical abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. An emphasis is placed on how electrical and interface characteristics like current–voltage (I–V) variation, ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of Au/PMI/p-Si diode structure change with the temperatures between 100 and 300 K. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. -- Highlights: •An Au/perylene-monoimide (PMI)/p-Si Schottky diode having an organic interlayer has been fabricated. •I–V characteristics have been investigated over a wide temperature range 100–300 K. •C–V measurements have been analyzed at room temperature. -- Abstract: In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current–voltage characteristics (I–V), ideality factor (n), barrier height (Φ B ) and series resistance (R s ) of diode change with temperature over a wide range of 100–300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation–recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung–Cheung method is also employed to analysis the current–voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier

  17. Thermionic field emission in gold nitride Schottky nanodiodes

    Science.gov (United States)

    Spyropoulos-Antonakakis, N.; Sarantopoulou, E.; Kollia, Z.; Samardžija, Z.; Kobe, S.; Cefalas, A. C.

    2012-11-01

    We report on the thermionic field emission and charge transport properties of gold nitride nanodomains grown by pulsed laser deposition with a molecular fluorine laser at 157 nm. The nanodomains are sandwiched between the metallic tip of a conductive atomic force microscope and a thin gold layer forming thus a metal-semiconductor-metal junction. Although the limited existing data in the literature indicate that gold nitride was synthesized previously with low efficiency, poor stability, and metallic character; in this work, it is shown that gold nitride nanodomains exhibit semiconducting behavior and the metal-semiconductor-metal contact can be modeled with the back-to-back Schottky barrier model. From the experimental I-V curves, the main charge carrier transport process is found to be thermionic field emission via electron tunneling. The rectifying, near symmetric and asymmetric current response of nanocontacts is related to the effective contact area of the gold nitride nanodomains with the metals. A lower limit for the majority charge carriers concentration at the boundaries of nanodomains is also established using the full depletion approximation, as nanodomains with thickness as low as 6 nm were found to be conductive. Current rectification and charge memory effects are also observed in "quite small" conductive nanodomains (6-10 nm) due to stored charges. Indeed, charges near the surface are identified as inversion domains in the phase shift mapping performed with electrostatic force microscopy and are attributed to charge trapping at the boundaries of the nanodomains.

  18. Thermionic emission from monolayer graphene, sheath formation and its feasibility towards thermionic converters

    Science.gov (United States)

    Misra, Shikha; Upadhyay Kahaly, M.; Mishra, S. K.

    2017-02-01

    A formalism describing the thermionic emission from a single layer graphene sheet operating at a finite temperature and the consequent formation of the thermionic sheath in its proximity has been established. The formulation takes account of two dimensional densities of state configuration, Fermi-Dirac (f-d) statistics of the electron energy distribution, Fowler's treatment of electron emission, and Poisson's equation. The thermionic current estimates based on the present analysis is found to be in reasonably good agreement with experimental observations (Zhu et al., Nano Res. 07, 1 (2014)). The analysis has further been simplified for the case where f-d statistics of an electron energy distribution converges to Maxwellian distribution. By using this formulation, the steady state sheath features, viz., spatial dependence of the surface potential and electron density structure in the thermionic sheath are derived and illustrated graphically for graphene parameters; the electron density in the sheath is seen to diminish within ˜10 s of Debye lengths. By utilizing the graphene based cathode in configuring a thermionic converter (TC), an appropriate operating regime in achieving the efficient energy conversion has been identified. A TC configured with the graphene based cathode (operating at ˜1200 K/work function 4.74 V) along with the metallic anode (operating at ˜400 K/ work function 2.0 V) is predicted to display ˜56% of the input thermal flux into the electrical energy, which infers approximately ˜84% of the Carnot efficiency.

  19. Photocathode operation of a thermionic RF gun

    International Nuclear Information System (INIS)

    Thorin, S.; Cutic, N.; Lindau, F.; Werin, S.; Curbis, F.

    2009-01-01

    The thermionic RF gun using a BaO cathode at the MAX-lab linac injector has been successfully commissioned for additional operation as a photocathode gun. By retaining the BaO cathode, lowering the temperature below thermal emission and illuminating it with a UV (263 nm) 9 ps laser pulse a reduced emittance and enhanced emission control has been achieved. Measurements show a normalised emittance of 5.5 mm mrad at 200 pC charge and a maximum quantum efficiency of 1.1x10 -4 . The gun is now routinely switched between storage ring injections in thermionic mode and providing a beam for the MAX-lab test FEL in photocathode mode.

  20. Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

    International Nuclear Information System (INIS)

    Bezotosnyi, V V; Kumykov, Kh Kh

    1998-01-01

    A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

  1. Oscillating thermionic conversion for high-density space power

    International Nuclear Information System (INIS)

    Jacobson, D.L.; Morris, J.F.

    1988-01-01

    The compactness, maneuverability, and productive weight utilization of space nuclear reactors benefit from the use of thermionic converters at high temperature. Nuclear-thermionic-conversion power requirements are discussed, and the role of oscillations in thermionic energy conversion (TEC) history is examined. Proposed TEC oscillations are addressed, and the results of recent studies of TEC oscillations are reviewed. The possible use of high-frequency TEC oscillations to amplify low-frequency ones is considered. The accomplishments of various programs studying the use of high-temperature thermionic oscillators are examined. 16 references

  2. Thermionic system evaluated test (TSET) facility description

    Science.gov (United States)

    Fairchild, Jerry F.; Koonmen, James P.; Thome, Frank V.

    1992-01-01

    A consortium of US agencies are involved in the Thermionic System Evaluation Test (TSET) which is being supported by the Strategic Defense Initiative Organization (SDIO). The project is a ground test of an unfueled Soviet TOPAZ-II in-core thermionic space reactor powered by electrical heat. It is part of the United States' national thermionic space nuclear power program. It will be tested in Albuquerque, New Mexico at the New Mexico Engineering Research Institute complex by the Phillips Laboratoty, Sandia National Laboratories, Los Alamos National Laboratory, and the University of New Mexico. One of TSET's many objectives is to demonstrate that the US can operate and test a complete space nuclear power system, in the electrical heater configuration, at a low cost. Great efforts have been made to help reduce facility costs during the first phase of this project. These costs include structural, mechanical, and electrical modifications to the existing facility as well as the installation of additional emergency systems to mitigate the effects of utility power losses and alkali metal fires.

  3. Thermionic conversion reactor technology assessment. Final report

    International Nuclear Information System (INIS)

    1984-02-01

    The in-core thermionic space nuclear power supply may be the only identified reactor-power concept that can meet the SP-100 size functional requirements with demonstrated state-of-the-art reactor system and space-qualified power system component temperatures. The SP-100 configuration limits provide a net 40 m 2 of primary non-deployed radiator area. If a reasonable 7-year degradation allowance of 15% to 20% is provided then the beginning of life (BOL) net power output requirement is about 120 kWe. Consequently, the SP-100 power system must produce a P/A of 2.7 kWe/m 2 . This non-deployed radiator area power density performance can only be reasonably achieved by the thermionic in-core convertr system, the potassium Rankine turbine system and the Stirling engine system. The purpose of this study is to examine past and current tests and data, and to assess the potential for successful development of suitable fueled-thermionic converters that will meet SP-100 and growth requirements. The basis for the assessment will be provided and the recommended key developments plan set forth

  4. Thermionics. A bibliography with abstracts. Search period covered: 1970--Apr 1975. [190 references

    Energy Technology Data Exchange (ETDEWEB)

    Grooms, D.W.

    1975-04-01

    Research on thermionic power generation, power plant design, converter design, and basic research on thermionic materials are cited in the bibliography. Spacecraft applications are included. (Contains 190 abstracts).

  5. The All Boron Carbide Diode Neutron Detector: Experiment and Modeling Approach

    International Nuclear Information System (INIS)

    Sabirianov, Ildar F.; Brand, Jennifer I.; Fairchild, Robert W.

    2008-01-01

    Boron carbide diode detectors, fabricated from two different polytypes of semiconducting boron carbide, will detect neutrons in reasonable agreement with theoretical expectations. The performance of the all boron carbide neutron detector differs, as expected, from devices where a boron rich neutron capture layer is distinct from the diode charge collection region (i.e. a conversion layer solid state detector). Diodes were fabricated from natural abundance boron (20% 10 B and 80% 11 B.) directly on the metal substrates and metal contacts applied to the films as grown. The total boron depth was on the order of 2 microns. This is clearly not a conversion-layer configuration. The diodes were exposed to thermal neutrons generated from a paraffin moderated plutonium-beryllium source in moderated and un-moderated, as well as shielded and unshielded experimental configurations, where the expected energy peaks at at 2.31 MeV and 2.8 MeV were clearly observed, albeit with some incomplete charge collection typical of thinner diode structures. The results are compared with other boron based thin film detectors and literature models. (authors)

  6. SP-100 thermionic technology program annual integrated technical progress report for the period ending September 30, 1984

    International Nuclear Information System (INIS)

    Holland, J.W.

    1984-11-01

    The thermionic technology program addresses the feasibility issues of a seven-year-life thermionic fuel element (TFE) for the SP-100 Thermionic Reactor Space Power System. These issues relate to the extension of TFE lifetime from three to seven years, one of the SP-100 requirements. The technology to support three-year lifetimes was demonstrated in the earlier TFE development program conducted in the late-1960s and 1970s. Primary life-limiting factors were recognized to be thermionic emitter dimensional increases due to swelling of the nuclear fuel and electrical structural damage from fast neutrons. The 1984-85 technology program is investigating the fueled emitter and insulator lifetime issues, both experimentally and analytically. The goal is to analytically project the lifetime of the fueled emitter and insulator and to experimentally verify these projection methods. In 1984, the efforts were largely devoted to the design and building of fueled emitters for irradiation in 1985, validation of fuel-emitter models, development of irradiation-resistant metal-ceramic seal and sheath insulator, modeling of insulator lifetime, and development of wide-spread, high-performance thermionic converters

  7. Circuit simulation model multi-quantum well laser diodes inducing transport and capture/escape

    International Nuclear Information System (INIS)

    Zhuber-Okrog, K.

    1996-04-01

    This work describes the development of world's first circuit simulation model for multi-quantum well (MQW) semiconductor lasers comprising caier transport and capture/escape effects. This model can be seen as the application of a new semiconductor device simulator for quasineutral structures including MQW layers with an extension for simple single mode modeling of optical behavior. It is implemented in a circuit simulation program. The model is applied to Fabry-Perot laser diodes and compared to measured data. (author)

  8. DC Analysis of an Ideal Diode Network Using Its Decomposed Piecevise-Linear Model

    Directory of Open Access Journals (Sweden)

    Z. Kolka

    1994-09-01

    Full Text Available A new method of finding the operating points in circuits containing ideal diodes which utilizes the decomposed form of the state model of an one-dimensional piecewise-linear (PWL system is developed. The universal procedure shown gives all the existing solutions quite automatically.

  9. Control for nuclear thermionic power source

    International Nuclear Information System (INIS)

    Fletcher, J.C.; Sawyer, C.D.

    1978-01-01

    A control for a power source is described which includes nuclear fuel interspersed with thermionic converters, including a power regulator that maintains a substantially constant output voltage to a variable load, and a control circuit that drives a neutron flux regulator in accordance with the current supplied to the power regulator and the neutron flux density in the region of the converters. The control circuit generates a control signal which is the difference between the neutron flux density and a linear fucntion of the current, and which drives the neutron regulator in a direction to decrease or increase the neutron flux according to the polarity of the control signal

  10. Simple, fast and accurate two-diode model for photovoltaic modules

    Energy Technology Data Exchange (ETDEWEB)

    Ishaque, Kashif; Salam, Zainal; Taheri, Hamed [Faculty of Electrical Engineering, Universiti Teknologi Malaysia, UTM 81310, Skudai, Johor Bahru (Malaysia)

    2011-02-15

    This paper proposes an improved modeling approach for the two-diode model of photovoltaic (PV) module. The main contribution of this work is the simplification of the current equation, in which only four parameters are required, compared to six or more in the previously developed two-diode models. Furthermore the values of the series and parallel resistances are computed using a simple and fast iterative method. To validate the accuracy of the proposed model, six PV modules of different types (multi-crystalline, mono-crystalline and thin-film) from various manufacturers are tested. The performance of the model is evaluated against the popular single diode models. It is found that the proposed model is superior when subjected to irradiance and temperature variations. In particular the model matches very accurately for all important points of the I-V curves, i.e. the peak power, short-circuit current and open circuit voltage. The modeling method is useful for PV power converter designers and circuit simulator developers who require simple, fast yet accurate model for the PV module. (author)

  11. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  12. Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

    OpenAIRE

    Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

    2017-01-01

    The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power model is proposed as the statistical model of the color shift (CS) process of LED products. Consequently, a CS mechanism constant is obtained for detecting the consistency of CS mechanisms among various s...

  13. Treatment of keloid scars with a 1210-nm diode laser in an animal model.

    Science.gov (United States)

    Philandrianos, Cécile; Bertrand, Baptiste; Andrac-Meyer, Lucile; Magalon, Guy; Casanova, Dominique; Kerfant, Nathalie; Mordon, Serge

    2015-12-01

    A temperature increase can improve wound healing by activation of heat shock protein 70 and stimulation of fibroblasts. Since keloids are a dysfunction of collagen fiber synthesis and organization, this study aimed to evaluate if a 1,210 nm diode laser could have effects in a new animal model of keloid scars. A total of 39 nude mice were used for this study. Phototypes IV and V human keloids were grafted into their backs and after 1 month of healing, the mice were divided into four groups: Control, Laser, Resection, Resection/Laser. In the Laser group, the keloids were treated with a 1,210-nm diode-laser with the following parameters: 4 W; 10 seconds; fluence: 51 J/cm(2) ; spot: 18.9 × 3.7 mm(2) . In the Resection group, surgical intra-lesional excision was performed. In the Resection/Laser group, keloids were treated with the 1,210-nm laser-diode after surgical intra-lesional excision. Temperature measurements were made during the laser treatment. Clinical examination and histological study were performed on the day of treatment and 1 month, 2 months, and 3 months later. Mean temperature measurement was of 44.8°C (42-48°) in the Laser groups. No healing complications or keloid proliferation was observed in any group. Keloid histologic characters were confirmed in all grafts. No histologic particularity was observed in the laser groups in comparison with the Control and Resection groups. First, this keloid animal model appears to be adapted for laser study. Secondly, the 1,210-nm diode laser does not induce keloid thermal damage in vivo. Further studies with different 1,210-nm laser diode parameters should be performed in order to observe significant effects on keloids. © 2015 Wiley Periodicals, Inc.

  14. Thermionic phenomena the collected works of Irving Langmuir

    CERN Document Server

    Suits, C Guy

    1961-01-01

    Thermionic Phenomena is the third volume of the series entitled The Collected Works of Irving Langmuir. This volume compiles articles written during the 1920's and early 1930's, the period when the science of thermionics is beginning to be of importance. This text is divided into two parts. The first part discusses vacuum pumps, specifically examining the effect of space charge and residual gases on thermionic currents in high vacuum. This part also explains fundamental phenomena in electron tubes having tungsten cathodes and the use of high-power vacuum tubes. The second part of this text loo

  15. Mechanism of explosive emission excitation in thermionic energy conversion processes

    Energy Technology Data Exchange (ETDEWEB)

    Bulyga, A.V.

    1983-01-01

    A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

  16. Comparison between arc drops in ignited thermionic converters with and without ion reflections at the emitter

    International Nuclear Information System (INIS)

    Lundgren, L.

    1985-01-01

    The output performance of two thermionic energy converters is compared. One converter has a normal emitter, working with zero field at the emitter which is close to the optimum working point, and the other has a low work function emitter and ion reflection at the emitter. A simple model of the plasma and the sheaths shows that a converter working with a low work function emitter and ion reflections gives a worse performance than a similar converter with a normal emitter

  17. Modeling of a diode-pumped thin-disk cesium vapor laser

    Science.gov (United States)

    An, Guofei; Cai, He; Liu, Xiaoxu; Han, Juhong; Zhang, Wei; Wang, Hongyuan; Wang, You

    2018-03-01

    A diode pumped alkali laser (DPAL) provides a significant potential for construction of high-powered lasers. Until now, a series of models have been established to analyze the kinetic process and most of them are based on the end-pumped alkali laser system in which the vapor cell are usually cylindrical and cuboid. In this paper, a mathematic model is constructed to investigate the kinetic processes of a diode pumped thin-disk cesium vapor laser, in which the cesium vapor and the buffer gases are beforehand filled in a sealed glass cell with a thin-disk structure. We systemically study the influences of the cell temperature and cell thickness on the output features of a thin-disk DPAL. Further, we study the thin-disk DPAL with the W-shaped resonator and multiple-disk configuration. To the best of our knowledge, there have not been any similar reports so far.

  18. Nuclear thermionic power plant integration problems

    International Nuclear Information System (INIS)

    Fraas, A.P.

    1967-02-01

    The numerous boundary conditions to be met in preparing a well proportioned, properly integrated design for a thermionic cell reactor are discussed with the emphasis on materials and fabrication problems. Pertinent experience with fuel elements, tube header sheets, electric heaters, and pressure vessels is cited to highlight key limitations that have been encountered in structurally similar equipment. A reference design is presented to indicate how one might attempt to satisfy all of the many boundary conditions. The study indicates that it will be difficult to get a reactor core power density greater than about 35 w/cm 3 and that, while it is possible to minimize the ill effects of failures within individual cells by employing series-parallel connections, the study further indicates that there is inherently a high probability of leaks and electrical shorts and arcs within the reactor so that it is doubtful that good reliability can be obtained

  19. Thermionic integrated circuit technology for high power space applications

    International Nuclear Information System (INIS)

    Yadavalli, S.R.

    1984-01-01

    Thermionic triode and integrated circuit technology is in its infancy and it is emerging. The Thermionic triode can operate at relatively high voltages (up to 2000V) and at least tens of amperes. These devices, including their use in integrated circuitry, operate at high temperatures (800 0 C) and are very tolerant to nuclear and other radiations. These properties can be very useful in large space power applications such as that represented by the SP-100 system which uses a nuclear reactor. This paper presents an assessment of the application of thermionic integrated circuitry with space nuclear power system technology. A comparison is made with conventional semiconductor circuitry considering a dissipative shunt regulator for SP-100 type nuclear power system rated at 100 kW. The particular advantages of thermionic circuitry are significant reductions in size and mass of heat dissipation and radiation shield subsystems

  20. Modeling silicon diode energy response factors for use in therapeutic photon beams.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2009-10-21

    Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm(2), 10 x 10 cm(2) and 20 x 20 cm(2) fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

  1. Modeling silicon diode energy response factors for use in therapeutic photon beams

    International Nuclear Information System (INIS)

    Eklund, Karin; Ahnesjoe, Anders

    2009-01-01

    Silicon diodes have good spatial resolution, which makes them advantageous over ionization chambers for dosimetry in fields with high dose gradients. However, silicon diodes overrespond to low-energy photons, that are more abundant in scatter which increase with large fields and larger depths. We present a cavity-theory-based model for a general response function for silicon detectors at arbitrary positions within photon fields. The model uses photon and electron spectra calculated from fluence pencil kernels. The incident photons are treated according to their energy through a bipartition of the primary beam photon spectrum into low- and high-energy components. Primary electrons from the high-energy component are treated according to Spencer-Attix cavity theory. Low-energy primary photons together with all scattered photons are treated according to large cavity theory supplemented with an energy-dependent factor K(E) to compensate for energy variations in the electron equilibrium. The depth variation of the response for an unshielded silicon detector has been calculated for 5 x 5 cm 2 , 10 x 10 cm 2 and 20 x 20 cm 2 fields in 6 and 15 MV beams and compared with measurements showing that our model calculates response factors with deviations less than 0.6%. An alternative method is also proposed, where we show that one can use a correlation with the scatter factor to determine the detector response of silicon diodes with an error of less than 3% in 6 MV and 15 MV photon beams.

  2. Thermionic Power Cell To Harness Heat Energies for Geothermal Applications

    Science.gov (United States)

    Manohara, Harish; Mojarradi, Mohammad; Greer, Harold F.

    2011-01-01

    A unit thermionic power cell (TPC) concept has been developed that converts natural heat found in high-temperature environments (460 to 700 C) into electrical power for in situ instruments and electronics. Thermionic emission of electrons occurs when an emitter filament is heated to gwhite hot h temperatures (>1,000 C) allowing electrons to overcome the potential barrier and emit into the vacuum. These electrons are then collected by an anode, and transported to the external circuit for energy storage.

  3. Analytical study on discrete model of virtual cathode in a high-current diode

    International Nuclear Information System (INIS)

    Privezentsev, A.P.

    1988-01-01

    Interest in investigation of virtual cathode dynamics related to the development of high-current accelerator equipment is caused by the possibility of its application for ion collective acceleration in direct high-current electron beams and generation of power electromagnetic radiation. The Hamiltonian form of a plane sheet model for a high-current flux in a plane diode is investigated. Variables used permit to carry out the investigation of dynamics of the virtual cathode flux by the method of coordinate point transformations in a phase space. The necessity of numerical integration of sheet motion equations is dropped out in this case. Analytical solution of the suggested iterative circuit for total flux passage is presented as an example. The solution obtained is equivalent to the known results of the plane diode theory, obtained in the hydrodynamic approximation

  4. Negative space charge effects in photon-enhanced thermionic emission solar converters

    International Nuclear Information System (INIS)

    Segev, G.; Weisman, D.; Rosenwaks, Y.; Kribus, A.

    2015-01-01

    In thermionic energy converters, electrons in the gap between electrodes form a negative space charge and inhibit the emission of additional electrons, causing a significant reduction in conversion efficiency. However, in Photon Enhanced Thermionic Emission (PETE) solar energy converters, electrons that are reflected by the electric field in the gap return to the cathode with energy above the conduction band minimum. These electrons first occupy the conduction band from which they can be reemitted. This form of electron recycling makes PETE converters less susceptible to negative space charge loss. While the negative space charge effect was studied extensively in thermionic converters, modeling its effect in PETE converters does not account for important issues such as this form of electron recycling, nor the cathode thermal energy balance. Here, we investigate the space charge effect in PETE solar converters accounting for electron recycling, with full coupling of the cathode and gap models, and addressing conservation of both electric and thermal energy. The analysis shows that the negative space charge loss is lower than previously reported, allowing somewhat larger gaps compared to previous predictions. For a converter with a specific gap, there is an optimal solar flux concentration. The optimal solar flux concentration, the cathode temperature, and the efficiency all increase with smaller gaps. For example, for a gap of 3 μm the maximum efficiency is 38% and the optimal flux concentration is 628, while for a gap of 5 μm the maximum efficiency is 31% and optimal flux concentration is 163

  5. The electrical characterization and response to hydrogen of Schottky diodes with a resistive metal electrode-rectifying an oversight in Schottky diode investigation

    Energy Technology Data Exchange (ETDEWEB)

    Dawson, P; Feng, L; Penate-Quesada, L [Centre for Nanostructured Media, School of Maths and Physics, Queen' s University of Belfast, Belfast BT7 1NN (United Kingdom); Hill, G [EPSRC National Centre for III-V Technologies, Mappin Street, University ofSheffield, Sheffield S1 3JD (United Kingdom); Mitra, J, E-mail: P.dawson@qub.ac.uk

    2011-03-30

    Schottky-barrier structures with a resistive metal electrode are examined using the 4-point probe method where the probes are connected to the metal electrode only. The observation of a significant decrease in resistance with increasing temperature (over a range of {approx}100 K) in the diode resistance-temperature (R{sub D}-T) characteristic is considered due to charge carrier confinement to the metal electrode at low temperature (high resistance), with the semiconductor progressively opening up as a parallel current carrying channel (low resistance) with increasing temperature due to increasing thermionic emission across the barrier. A simple model is constructed, based on thermionic emission at quasi-zero bias, that generates good fits to the experimental data. The negative differential resistance (NDR) region in the R{sub D}-T characteristic is a general effect and is demonstrated across a broad temperature range for a variety of Schottky structures grown on Si-, GaAs- and InP-substrates. In addition the NDR effect is harnessed in micro-scaled Pd/n-InP devices for the detection of low levels of hydrogen in an ambient atmosphere of nitrogen.

  6. A new approach to the extraction of single exponential diode model parameters

    Science.gov (United States)

    Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.

    2018-06-01

    A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the integration of the data which allow to isolate the effects of each of the model parameters. A differentiation method is also presented for data with low level of experimental noise. Measured and simulated data are used to verify the applicability of both proposed method. Physical insight about the validity of the model is also obtained by using the proposed graphical determinations of the parameters.

  7. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jiawei; Zhang, Linqing; Ma, Xiaochen; Wilson, Joshua [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Jin, Jidong [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Du, Lulu; Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); School of Physics, Shandong University, Jinan 250100 (China)

    2015-08-31

    The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

  8. Linear Modeling of the Three-Phase Diode Front-Ends with Reduced Capacitance Considering the Continuous Conduction Mode

    DEFF Research Database (Denmark)

    Máthé, Lászlo; Yang, Feng; Wang, Dong

    2016-01-01

    for the entire drive systems have to be designed. A linearization and simplification to single phase model can be performed; however, when inductance is present at the grid side its performance is not satisfactory. The problem is mainly caused by neglecting the continuous conduction mode of the rectifier......Reducing the DC-link capacitance considerably is a new trend in many applications, such as: motor drives, electrolysers etc.. A straight forward method for modelling the diode front-end is to build a non-linear diode based model. This non-linear model gives difficulties when the controllers...... in the simplified model. This article proposes a simplified linear model where the continuous conduction mode is also considered. The DC-link voltage and current waveforms obtained through the proposed simplified model matches very well the waveforms obtained with the three phase diode based model and also...

  9. Thermionic combustor application to combined gas and steam turbine power plants

    International Nuclear Information System (INIS)

    Miskolczy, G.; Wang, C.C.; Lieb, D.P.

    1981-01-01

    A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air, the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh

  10. Thermionic combustor application to combined gas and steam turbine power plants

    Science.gov (United States)

    Miskolczy, G.; Wang, C. C.; Lieb, D. P.; Margulies, A. E.; Fusegni, L. J.; Lovell, B. J.

    A design for the insertion of thermionic converters into the wall of a conventional combustor to produce electricity in a topping cycle is described, and a study for applications in gas and steam generators of 70 and 30 MW is evaluated for engineering and economic feasibility. Waste heat from the thermionic elements is used to preheat the combustor air; the heat absorbed by the elements plus further quenching of the exhaust gases with ammonia is projected to reduce NO(x) emissions to acceptable levels. Schematics, flow diagrams, and components of a computer model for cost projections are provided. It was found that temperatures around the emitters must be maintained above 1,600 K, with maximum efficiency and allowable temperature at 1,800 K, while collectors generate maximally at 950 K, with a corresponding work function of 1.5 eV. Cost sensitive studies indicate an installed price of $475/kW for the topping cycle, with improvements in thermionic converter characteristics bringing the cost to $375/kW at a busbar figure of 500 mills/kWh.

  11. Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

    Science.gov (United States)

    Wang, Xiao-Feng; Shao, Zhen-Guang; Chen, Dun-Jun; Lu, Hai; Zhang, Rong; Zheng, You-Dou

    2014-05-01

    We fabricate two Ni/Au-In0.17Al0.83N/AlN/GaN Schottky diodes on substrates of sapphire and Si, respectively, and investigate their forward-bias current transport mechanisms by temperature-dependent current-voltage measurements. In the temperature range of 300-485 K, the Schottky barrier heights (SBHs) calculated by using the conventional thermionic-emission (TE) model are strongly positively dependent on temperature, which is in contrast to the negative-temperature-dependent characteristic of traditional semiconductor Schottky diodes. By fitting the forward-bias I-V characteristics using different current transport models, we find that the tunneling current model can describe generally the I-V behaviors in the entire measured range of temperature. Under the high forward bias, the traditional TE mechanism also gives a good fit to the measured I-V data, and the actual barrier heights calculated according to the fitting TE curve are 1.434 and 1.413 eV at 300K for InAlN/AlN/GaN Schottky diodes on Si and the sapphire substrate, respectively, and the barrier height shows a slightly negative temperature coefficient. In addition, a formula is given to estimate SBHs of Ni/Au—InAlN/AlN/GaN Schottky diodes taking the Fermi-level pinning effect into account.

  12. Characterization, Modeling, and Optimization of Light-Emitting Diode Systems

    DEFF Research Database (Denmark)

    Thorseth, Anders

    are simulated SPDs similar to traditional light sources, and with high light quality. As part of this work the techniques have been applied in practical illumination applications. The presented examples are historical artifacts and illumination of plants to increase photosynthesis....... comparing the chromaticity of the measured SPD with tted models, the deviation is found to be larger than the lower limit of human color perception. A method has been developed to optimize multicolored cluster LED systems with respect to light quality, using multi objective optimization. The results...

  13. Core/corona modeling of diode-imploded annular loads

    Science.gov (United States)

    Terry, R. E.; Guillory, J. U.

    1980-11-01

    The effects of a tenuous exterior plasma corona with anomalous resistivity on the compression and heating of a hollow, collisional aluminum z-pinch plasma are predicted by a one-dimensional code. As the interior ("core") plasma is imploded by its axial current, the energy exchange between core and corona determines the current partition. Under the conditions of rapid core heating and compression, the increase in coronal current provides a trade-off between radial acceleration and compression, which reduces the implosion forces and softens the pitch. Combined with a heuristic account of energy and momentum transport in the strongly coupled core plasma and an approximate radiative loss calculation including Al line, recombination and Bremsstrahlung emission, the current model can provide a reasonably accurate description of imploding annular plasma loads that remain azimuthally symmetric. The implications for optimization of generator load coupling are examined.

  14. Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

    2012-06-25

    Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

  15. In-pile and out-of-pile testing of a molybdenum-uranium dioxide cermet fueled themionic diode

    Science.gov (United States)

    Diianni, D. C.

    1972-01-01

    The behavior of Mo-UO2 cermet fuel in a diode for thermionic reactor application was studied. The diode had a Mo-0.5 Ti emitter and niobium collector. Output power ranged from 1.4 to 2.8 W/cm squared at emitter and collector temperatures of 1500 deg and 540 C. Thermionic performance was stable within the limits of the instrumentation sensitivity. Through 1000 hours of in-pile operation the emitter was dimensionally stable. However, some fission gases (15 percent) leaked through an inner clad imperfection that occurred during fuel fabrication.

  16. Progress in radiation immune thermionic integrated circuits

    International Nuclear Information System (INIS)

    Lynn, D.K.; McCormick, J.B.

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs

  17. Progress in radiation immune thermionic integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Lynn, D.K.; McCormick, J.B. (comps.)

    1985-08-01

    This report describes the results of a program directed at evaluating the thermionic integrated circuit (TIC) technology for applicability to military systems. Previous programs under the sponsorship of the Department of Energy, Office of Basic Energy Sciences, have developed an initial TIC technology base and demonstrated operation in high-temperature and high-radiation environments. The program described in this report has two parts: (1) a technical portion in which experiments and analyses were conducted to refine perceptions of near-term as well as ultimate performance levels of the TIC technology and (2) an applications portion in which the technical conclusions were to be evaluated against potential military applications. This report draws several conclusions that strongly suggest that (1) useful radiation-hard/high-temperature operable integrated circuits can be developed using the TIC technology; (2) because of their ability to survive and operate in hostile environments, a variety of potential military applications have been projected for this technology; and (3) based on the above two conclusions, an aggressive TIC development program should be initiated to provide the designers of future systems with integrated circuits and devices with the unique features of the TICs.

  18. Isotopic Thermionic Generator; Generateur thermoionique isotopique

    Energy Technology Data Exchange (ETDEWEB)

    Clemot, M; Devin, B; Durand, J P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1967-07-01

    This report describes the general design of a thermionic direct conversion space generator. The power source used is a radioisotope. Two radioisotopes are considered: Pu 238 and Cm 244. The system is made up of a heat pipe concentrating the thermal flux from the isotope to the emitter, and of a second heat pipe evacuating the waste heat from the collector to the outer wall used as radiating panel. Calculations are given in the particular case of a 100 electrical watts output power. (authors) [French] Ce rapport decrit la structure d'un generateur spatial d'electricite a conversion directe du type thermoionique. La source d'energie est un radioisotope. Deux isotopes sont envisages: le Pu 238 et le Cm 244. Le systeme comporte pour l'emetteur un caloduc concentreur de flux thermique et pour le collecteur, un caloduc evacuateur vers l'enveloppe du generateur utilise, en panneau rayonnant. Les calculs ont ete conduits dans le cas particulier d'une puissance convertie de 100 watts electriques. (auteurs)

  19. Thermionic nuclear reactor with internal heat distribution and multiple duct cooling

    Science.gov (United States)

    Fisher, C.R.; Perry, L.W. Jr.

    1975-11-01

    A Thermionic Nuclear Reactor is described having multiple ribbon-like coolant ducts passing through the core, intertwined among the thermionic fuel elements to provide independent cooling paths. Heat pipes are disposed in the core between and adjacent to the thermionic fuel elements and the ribbon ducting, for the purpose of more uniformly distributing the heat of fission among the thermionic fuel elements and the ducts.

  20. Theoretical Current-Voltage Curve in Low-Pressure Cesium Diode for Electron-Rich Emission

    Science.gov (United States)

    Coldstein, C. M.

    1964-01-01

    Although considerable interest has been shown in the space-charge analysis of low-pressure (collisionless case) thermionic diodes, there is a conspicuous lack in the presentation of results in a way that allows direct comparison with experiment. The current-voltage curve of this report was, therefore, computed for a typical case within the realm of experimental interest. The model employed in this computation is shown in Fig. 1 and is defined by the limiting potential distributions [curves (a) and (b)]. Curve (a) represents the potential V as a monotonic function of position with a slope of zero at the anode; curve (b) is similarly monotonic with a slope of zero at the cathode. It is assumed that by a continuous variation of the anode voltage, the potential distributions vary continuously from one limiting form to the other. Although solutions for infinitely spaced electrodes show that spatically oscillatory potential distributions may exist, they have been neglected in this computation.

  1. A50-kW(el) solar energy thermionic power generator for spacecraft

    International Nuclear Information System (INIS)

    Sahin, S.

    1978-01-01

    The technical limits of thermionic reactors in space craft and the potentials of solar energy thermionic converters are discussed. The technical design of a solar energy thermionic generator for 50 kW(el) as a secondary energy source in unmanned space craft is presented. (GG) [de

  2. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    International Nuclear Information System (INIS)

    Rodríguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martín, Francisco; Schrebler, Ricardo; Ramos-Barrado, José R.; Dalchiele, Enrique A.

    2012-01-01

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic–organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of ∼ 40% to ∼ 50% in the visible region between 450 and 700 nm. The current–voltage (I–V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range − 4 V to + 4 V. The I–V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: ► Semitransparent inorganic–organic heterojunction thin film diodes investigated ► n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction ► Diodes exhibited an optical transmission of ∼ 40%–∼ 50% in the visible region ► Heterojunction current–voltage features show good rectifying diode characteristics ► A forward to reverse current ratio as high as 35 (− 4 V to + 4 V range) was attained

  3. Semitransparent ZnO/poly(3,4-ethylenedioxythiophene) based hybrid inorganic/organic heterojunction thin film diodes prepared by combined radio-frequency magnetron-sputtering and electrodeposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Moreno, Jorge; Navarrete-Astorga, Elena; Martin, Francisco [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Schrebler, Ricardo [Instituto de Quimica, Facultad de Ciencias, Pontificia Universidad Catolica de Valparaiso, Casilla 4059, Valparaiso (Chile); Ramos-Barrado, Jose R. [Laboratorio de Materiales y Superficies (Unidad Asociada al CSIC), Departamentos de Fisica Aplicada and Ing. Quimica, Universidad de Malaga, E29071 Malaga (Spain); Dalchiele, Enrique A., E-mail: dalchiel@fing.edu.uy [Instituto de Fisica, Facultad de Ingenieria, Herrera y Reissig 565, C.C. 30, 11000 Montevideo (Uruguay)

    2012-12-15

    n-ZnO/p-poly(3,4-ethylenedioxythiophene) (PEDOT) semitransparent inorganic-organic hybrid vertical heterojunction thin film diodes have been fabricated with PEDOT and ZnO thin films grown by electrodeposition and radio-frequency magnetron-sputtering respectively, onto a tin doped indium oxide coated glass substrate. The diode exhibited an optical transmission of {approx} 40% to {approx} 50% in the visible region between 450 and 700 nm. The current-voltage (I-V) characteristics of the heterojunction show good rectifying diode characteristics, with a ratio of forward current to the reverse current as high as 35 in the range - 4 V to + 4 V. The I-V characteristic was examined in the framework of the thermionic emission model. The ideality factor and barrier height were obtained as 4.0 and 0.88 eV respectively. - Highlights: Black-Right-Pointing-Pointer Semitransparent inorganic-organic heterojunction thin film diodes investigated Black-Right-Pointing-Pointer n-ZnO/p-poly(3,4-ethylenedioxythipohene) used for the heterojunction Black-Right-Pointing-Pointer Diodes exhibited an optical transmission of {approx} 40%-{approx} 50% in the visible region Black-Right-Pointing-Pointer Heterojunction current-voltage features show good rectifying diode characteristics Black-Right-Pointing-Pointer A forward to reverse current ratio as high as 35 (- 4 V to + 4 V range) was attained.

  4. A NEW THERMIONIC RF ELECTRON GUN FOR SYNCHROTRON LIGHT SOURCES

    Energy Technology Data Exchange (ETDEWEB)

    Kutsaev, Sergey; Agustsson, R.; Hartzell, J; Murokh, A.; Nassiri, A.; Savin, E.; Smirnov, A.V.; Smirnov, A. Yu; Sun, Y.; Verma, A; Waldschmidt, Geoff; Zholents, A.

    2017-06-02

    A thermionic RF gun is a compact and efficient source of electrons used in many practical applications. RadiaBeam Systems and the Advanced Photon Source at Argonne National Laboratory collaborate in developing of a reliable and robust thermionic RF gun for synchrotron light sources which would offer substantial improvements over existing thermionic RF guns and allow stable operation with up to 1A of beam peak current at a 100 Hz pulse repetition rate and a 1.5 μs RF pulse length. In this paper, we discuss the electromagnetic and engineering design of the cavity and report the progress towards high power tests of the cathode assembly of the new gun.

  5. Comparative study of afterpulsing behavior and models in single photon counting avalanche photo diode detectors.

    Science.gov (United States)

    Ziarkash, Abdul Waris; Joshi, Siddarth Koduru; Stipčević, Mario; Ursin, Rupert

    2018-03-22

    Single-photon avalanche diode (SPAD) detectors, have a great importance in fields like quantum key distribution, laser ranging, florescence microscopy, etc. Afterpulsing is a non-ideal behavior of SPADs that adversely affects any application that measures the number or timing of detection events. Several studies based on a few individual detectors, derived distinct mathematical models from semiconductor physics perspectives. With a consistent testing procedure and statistically large data sets, we show that different individual detectors - even if identical in type, make, brand, etc. - behave according to fundamentally different mathematical models. Thus, every detector must be characterized individually and it is wrong to draw universal conclusions about the physical meaning behind these models. We also report the presence of high-order afterpulses that are not accounted for in any of the standard models.

  6. Electronic Transport Mechanism for Schottky Diodes Formed by Au/HVPE a-Plane GaN Templates Grown via In Situ GaN Nanodot Formation

    Directory of Open Access Journals (Sweden)

    Moonsang Lee

    2018-06-01

    Full Text Available We investigate the electrical characteristics of Schottky contacts for an Au/hydride vapor phase epitaxy (HVPE a-plane GaN template grown via in situ GaN nanodot formation. Although the Schottky diodes present excellent rectifying characteristics, their Schottky barrier height and ideality factor are highly dependent upon temperature variation. The relationship between the barrier height, ideality factor, and conventional Richardson plot reveals that the Schottky diodes exhibit an inhomogeneous barrier height, attributed to the interface states between the metal and a-plane GaN film and to point defects within the a-plane GaN layers grown via in situ nanodot formation. Also, we confirm that the current transport mechanism of HVPE a-plane GaN Schottky diodes grown via in situ nanodot formation prefers a thermionic field emission model rather than a thermionic emission (TE one, implying that Poole–Frenkel emission dominates the conduction mechanism over the entire range of measured temperatures. The deep-level transient spectroscopy (DLTS results prove the presence of noninteracting point-defect-assisted tunneling, which plays an important role in the transport mechanism. These electrical characteristics indicate that this method possesses a great throughput advantage for various applications, compared with Schottky contact to a-plane GaN grown using other methods. We expect that HVPE a-plane GaN Schottky diodes supported by in situ nanodot formation will open further opportunities for the development of nonpolar GaN-based high-performance devices.

  7. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  8. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  9. Wound healing efficacy of a 660-nm diode laser in a rat incisional wound model.

    Science.gov (United States)

    Suzuki, Ryoichi; Takakuda, Kazuo

    2016-11-01

    This study aimed to elucidate the optimum usage parameters of low reactive-level laser therapy (LLLT) in a rat incisional wound model. In Sprague-Dawley rats, surgical wounds of 15-mm length were made in the dorsal thoracic region. They were divided into groups to receive 660-nm diode laser irradiation 24 h after surgery at an energy density of 0 (control), 1, 5, or 10 J/cm 2 . Tissue sections collected on postoperative day 3 were stained with hematoxylin-eosin and an antibody for ED1 to determine the number of macrophages around the wound. Samples collected on day 7 were stained with hematoxylin-eosin and observed via polarized light microscopy to measure the area occupied by collagen fibers around the wound; day 7 skin specimens were also subjected to mechanical testing to evaluate tensile strength. On postoperative day 3, the numbers of macrophages around the wound were significantly lower in the groups receiving 1 and 5 J/cm 2 irradiation, compared to the control and 10 J/cm 2 irradiation groups (p diode laser with energy density of 1 and 5 J/cm 2 enhanced wound healing in a rat incisional wound model. However, a higher radiation energy density yielded no significant enhancement.

  10. Cold welding of organic light emitting diode: Interfacial and contact models

    Directory of Open Access Journals (Sweden)

    J. Asare

    2016-06-01

    Full Text Available This paper presents the results of an analytical and computational study of the contacts and interfacial fracture associated with the cold welding of Organic Light Emitting diodes (OLEDs. The effects of impurities (within the possible interfaces are explored for contacts and interfacial fracture between layers that are relevant to model OLEDs. The models are used to study the effects of adhesion, pressure, thin film layer thickness and dust particle modulus (between the contacting surfaces on contact profiles around impurities between cold-welded thin films. The lift-off stage of thin films (during cold welding is then modeled as an interfacial fracture process. A combination of adhesion and interfacial fracture theories is used to provide new insights for the design of improved contact and interfacial separation during cold welding. The implications of the results are discussed for the design and fabrication of cold welded OLED structures.

  11. Development of a thermionic-reactor space-power system. Final summary report

    International Nuclear Information System (INIS)

    1973-01-01

    Initial experimental work led to the award of the first AEC thermionic contract on May 1, 1962, for the development of fission heated thermionic cells with an operating life of 10,000 hours or more. Two types of converters were fabricated: (1) electrically heated, and (2) fission heated where the fuel was either uranium carbide or uranium oxide. Competition between GGA and GE was climaxed on July 1, 1970 by the award to GGA of a contract to develop an in-core thermionic reactor. This report is divided into the following: thermionic research, materials technology, thermionic fuel element development, reactor technology, and systems technology

  12. An accurate modelling of the two-diode model of PV module using a hybrid solution based on differential evolution

    International Nuclear Information System (INIS)

    Chin, Vun Jack; Salam, Zainal; Ishaque, Kashif

    2016-01-01

    Highlights: • An accurate computational method for the two-diode model of PV module is proposed. • The hybrid method employs analytical equations and Differential Evolution (DE). • I PV , I o1 , and R p are computed analytically, while a 1 , a 2 , I o2 and R s are optimized. • This allows the model parameters to be computed without using costly assumptions. - Abstract: This paper proposes an accurate computational technique for the two-diode model of PV module. Unlike previous methods, it does not rely on assumptions that cause the accuracy to be compromised. The key to this improvement is the implementation of a hybrid solution, i.e. by incorporating the analytical method with the differential evolution (DE) optimization technique. Three parameters, i.e. I PV , I o1 , and R p are computed analytically, while the remaining, a 1 , a 2 , I o2 and R s are optimized using the DE. To validate its accuracy, the proposed method is tested on three PV modules of different technologies: mono-crystalline, poly-crystalline and thin film. Furthermore, its performance is evaluated against two popular computational methods for the two-diode model. The proposed method is found to exhibit superior accuracy for the variation in irradiance and temperature for all module types. In particular, the improvement in accuracy is evident at low irradiance conditions; the root-mean-square error is one order of magnitude lower than that of the other methods. In addition, the values of the model parameters are consistent with the physics of PV cell. It is envisaged that the method can be very useful for PV simulation, in which accuracy of the model is of prime concern.

  13. Modeling of 4H—SiC multi-floating-junction Schottky barrier diode

    International Nuclear Information System (INIS)

    Hong-Bin, Pu; Lin, Cao; Zhi-Ming, Chen; Jie, Ren; Ya-Gong, Nan

    2010-01-01

    This paper develops a new and easy to implement analytical model for the specific on-resistance and electric field distribution along the critical path for 4H—SiC multi-floating junction Schottky barrier diode. Considering the charge compensation effects by the multilayer of buried opposite doped regions, it improves the breakdown voltage a lot in comparison with conventional one with the same on-resistance. The forward resistance of the floating junction Schottky barrier diode consists of several components and the electric field can be understood with superposition concept, both are consistent with MEDICI simulation results. Moreover, device parameters are optimized and the analyses show that in comparison with one layer floating junction, multilayer of floating junction layer is an effective way to increase the device performance when specific resistance and the breakdown voltage are traded off. The results show that the specific resistance increases 3.2 mΩ·cm 2 and breakdown voltage increases 422 V with an additional floating junction for the given structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Wound treatment on a diabetic rat model by a 808 nm diode laser

    International Nuclear Information System (INIS)

    Lau, Pik Suan; Bidin, Noriah; Krishnan, Ganesan; AnaybBaleg, Sana Mohammed; Baktiar, Harzi; Marsin, Faridah M; Sum, Mohamad Bin Md; Nassir, Zaleha; Chong, Pek Lian; Hamid, Asmah

    2015-01-01

    This paper presents a study on the effect of laser irradiation on wound healing. 808 nm diode laser was employed to facilitate the healing of impaired wounds in experimental diabetes using a rat model. Diabetes was induced in male rats by a streptozotocin injection with a dose of 60 mg kg −1 . The disease was verified via measurement of the blood glucose level, which was set having 20 mmol L −1 stability. The rats were randomly distributed into two groups; one served as a control group and the other group was treated with the laser. The power density of the laser used was 0.5 W cm −2 and the wounds were treated for 8 d with the contact time of one second daily. The energy density used was 0.5 J cm −2 . The healing progress was recorded via a digital camera. The recorded images were then transferred into Inspector Matrox and image J programs for the accurate measurement of the healing area. The tissue details of the wound were studied through histology. The wound contraction rate of laser therapy group was found to be two times faster than control group. This indicates that the 808 nm diode laser can accelerate the wound healing process. (paper)

  15. Modelling of a diode laser with a resonant grating of quantum wells and an external mirror

    International Nuclear Information System (INIS)

    Vysotskii, D V; Elkin, N N; Napartovich, A P; Kozlovskii, Vladimir I; Lavrushin, B M

    2011-01-01

    A three-dimensional numerical model of a diode laser with a resonant grating of quantum wells (QWs) and an external mirror is developed and used to calculate diode laser pulses that are long compared to the time of reaching a stationary regime and are short enough to neglect heating of the medium. The consistent solutions of the Helmholtz field equation and the system of diffusion equations for inversion in each QW are found. A source of charge carriers can be both an electron beam and a pump laser beam. The calculations yielded the longitudinal and radial profiles of the generated field, as well as its wavelength and power. The effective threshold pump current is determined. In the created iteration algorithm, the calculation time linearly increases with the number of QWs, which allows one to find the characteristics of lasers with a large number of QWs. The output powers and beam divergence angles of a cylindrical laser are calculated for different cavity lengths and pump spot radii. After calculating the fundamental mode characteristics, high-order modes were additionally calculated on the background of the frozen carrier distributions in the QW grating. It is shown that all the competing modes remain below the excitation threshold for the pump powers used in the experiment. The calculated and experimental data for the case of pumping by a nanosecond electron beam are qualitatively compared.

  16. Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

    Science.gov (United States)

    Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

    2016-07-21

    Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

  17. Thermionic reactor power conditioner design for nuclear electric propulsion.

    Science.gov (United States)

    Jacobsen, A. S.; Tasca, D. M.

    1971-01-01

    Consideration of the effects of various thermionic reactor parameters and requirements upon spacecraft power conditioning design. A basic spacecraft is defined using nuclear electric propulsion, requiring approximately 120 kWe. The interrelationships of reactor operating characteristics and power conditioning requirements are discussed and evaluated, and the effects on power conditioner design and performance are presented.

  18. A thermionic energy converter with A molybdenum alumina cermet emitter

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.; Yogi Goswami, D.

    1988-01-01

    The I-V characteristics of a thermionic converter equipped with a Mo-1w/o AI203 emitter and a Mo collector were measured. The conditions were varied over a limited range without, as well as with Cs. Work functions of Mo as well as Mo-1w/o AI203 were determined. Measurements were carried out in a

  19. Processes of preparation, deposition and analysis of thermionic emissive substances

    International Nuclear Information System (INIS)

    Romao, B.M. Verdelli; Muraro Junior, A.; Tessaroto, L.A.B.; Takahashi, J.

    1992-09-01

    This paper shows the results of the optimization of the process of preparation and deposition of thermionic emissive substances that are used in the oxide-cathodes which are utilized in the gun of the IEAv linear electron accelerator. (author). 5 refs., 5 figs

  20. Observation of Repetition-Rate Dependent Emission From an Un-Gated Thermionic Cathode Rf Gun

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P.; Sun, Y.; Harris, J.R.; Lewellen, J.W.

    2017-06-02

    Recent work at Fermilab in collaboration with the Advanced Photon Source and members of other national labs, designed an experiment to study the relationship between the RF repetition rate and the average current per RF pulse. While existing models anticipate a direct relationship between these two parameters we observed an inverse relationship. We believe this is a result of damage to the barium coating on the cathode surface caused by a change in back-bombardment power that is unaccounted for in the existing theories. These observations shed new light on the challenges and fundamental limitations associated with scaling an ungated thermionic cathode RF gun to high average current.

  1. Photobiomodulation by helium neon and diode lasers in an excisional wound model: A single blinded trial

    Directory of Open Access Journals (Sweden)

    Snehil Dixit

    2012-01-01

    Full Text Available Background: Application of different kinds of lasers in clinical and experimental studies causes photobiomodulation that works at localized cellular and humoral level on various biological systems. Increased numbers of fibroblasts, myofibroblast, and degranulation of mast cells have been the observed benefits post-irradiation. Objective: Was to find out the effect of irradiation with energy densities of 3.38 J/cm 2 , 8 J/cm 2 , and 18 J/cm 2 on animal tissue (albino wistar rats in an excisional wound model and to assess changes in biochemical (hydroxyproline and histopathological levels in excisional wound model. Materials and Methods: The animals were divided into 4 groups, which were labeled as L1, diode laser (18 J/cm 2 , L2 Helium-neon (He-Ne, 8 J/cm 2 , L3 diode laser (3.38 J/cm 2 , and sham treatment for control was depicted by C, respectively. Histological and hydroxyproline analysis was performed on 7, 14, 21 days of post-wounding. One-way analysis of variance, ANOVA and Bonferroni′s multiple comparison tests were done for tissue hydroxyproline levels. Results: There was no significant increase in the hydroxyproline content (P < 0.005 when observed in study group and compared to controls. Whereas significant epithelizations was seen in group treated with He-Ne laser of intensity of 8 J/cm 2 . Conclusion: The experimental observations suggest that low intensity helium-neon laser of 8 J/cm 2 intensity facilitated photo stimulation by tissue repair, but failed to show significant tissue hydroxyproline levels in excisional wound model.

  2. An accurate behavioral model for single-photon avalanche diode statistical performance simulation

    Science.gov (United States)

    Xu, Yue; Zhao, Tingchen; Li, Ding

    2018-01-01

    An accurate behavioral model is presented to simulate important statistical performance of single-photon avalanche diodes (SPADs), such as dark count and after-pulsing noise. The derived simulation model takes into account all important generation mechanisms of the two kinds of noise. For the first time, thermal agitation, trap-assisted tunneling and band-to-band tunneling mechanisms are simultaneously incorporated in the simulation model to evaluate dark count behavior of SPADs fabricated in deep sub-micron CMOS technology. Meanwhile, a complete carrier trapping and de-trapping process is considered in afterpulsing model and a simple analytical expression is derived to estimate after-pulsing probability. In particular, the key model parameters of avalanche triggering probability and electric field dependence of excess bias voltage are extracted from Geiger-mode TCAD simulation and this behavioral simulation model doesn't include any empirical parameters. The developed SPAD model is implemented in Verilog-A behavioral hardware description language and successfully operated on commercial Cadence Spectre simulator, showing good universality and compatibility. The model simulation results are in a good accordance with the test data, validating high simulation accuracy.

  3. Chaos control in an electron beam with the supercritical current in the hydrodynamic model of the Pierce diode

    International Nuclear Information System (INIS)

    Koronovskij, A.A.; Rempen, I.S.; Khramov, A.E.

    2003-01-01

    The possibility of controlling the chaos in the electron beam with the supercritical current in the hydrodynamic model of the Pierce diode through the continuous feedback; the methodology of controlling the chaotic dynamics through stabilization of the unstable equilibrium state in the distributed active medium is proposed [ru

  4. 2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

    NARCIS (Netherlands)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav; Witzigmann, Bernd; Osiński, Marek; Arakawa, Yasuhiko

    2018-01-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow

  5. Diode laser heterodyne observations of silicon monoxide in sunspots - A test of three sunspot models

    Science.gov (United States)

    Glenar, D. A.; Deming, D.; Jennings, D. E.; Kostiuk, T.; Mumma, M. J.

    1983-01-01

    Absorption features from the 8 micron SiO fundamental (upsilon = 1-0) and hot bands (upsilon = 2-1) have been observed in sunspots at sub-Doppler resolution using a ground-based tunable diode laser heterodyne spectrometer. The observed line widths suggest an upper limit of 0.5 km/s for the microturbulent velocity in sunspot umbrae. Since the silicon monoxide abundance is very sensitive to sunspot temperature, the measured equivalent widths permit an unambiguous determination of the temperature-pressure relation in the upper layers of the umbral atmosphere. In the region of SiO line formation (log P sub g = 3.0-4.5), the results support the sunspot model suggested by Stellmacher and Wiehr (1970).

  6. Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

    Science.gov (United States)

    Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

    2018-02-01

    Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

  7. High Efficiency Thermionics (HET-IV) and Converter Advancement (CAP) programs. Final reports

    Energy Technology Data Exchange (ETDEWEB)

    Geller, C.B.; Murray, C.S.; Riley, D.R. [Bettis Atomic Power Lab., West Mifflin, PA (United States); Desplat, J.L.; Hansen, L.K.; Hatch, G.L.; McVey, J.B.; Rasor, N.S. [Rasor Associates, Inc., Sunnyvale, CA (United States)

    1996-04-01

    This report contains the final report of the High Efficiency Thermionics (HET-IV) Program, Attachment A, performed at Rasor Associates, Inc. (RAI); and the final report of the Converter Advancement Program (CAP), performed at the Bettis Atomic Power Laboratory, Attachment B. The phenomenology of cesium-oxygen thermionic converters was elucidated in these programs, and the factors that had prevented the achievement of stable, enhanced cesium-oxygen converter performance for the previous thirty years were identified. Based on these discoveries, cesium-oxygen vapor sources were developed that achieved stable performance with factor-of-two improvements in power density and thermal efficiency, relative to conventional, cesium-only ignited mode thermionic converters. Key achievements of the HET-IV/CAP programs are as follows: a new technique for measuring minute traces of oxygen in cesium atmospheres; the determination of the proper range of oxygen partial pressures for optimum converter performance--10{sup {minus}7} to 10{sup {minus}9} torr; the discovery, and analysis of the cesium-oxygen liquid migration and compositional segregation phenomena; the successful use of capillary forces to contain the migration phenomenon; the use of differential heating to control compositional segregation, and induce vapor circulation; the development of mechanically and chemically stable, porous reservoir structures; the development of precise, in situ oxygen charging methods; stable improvements in emitter performance, up to effective emitter bare work functions of 5.4 eV; stable improvements in barrier index, to value below 1.8 Volts; the development of detailed microscopic models for cesium-oxygen reservoir dynamics and collector work function behavior; and the discovery of new relationships between electrode geometry and Schock Instability.

  8. Current transport mechanisms in lattice-matched Pt/Au-InAlN/GaN Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jian; Yan, Dawei, E-mail: daweiyan@jiangnan.edu.cn; Yang, Guofeng; Wang, Fuxue; Xiao, Shaoqing; Gu, Xiaofeng [Key Laboratory of Advanced Process Control for Light Industry (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi 214122 (China)

    2015-04-21

    Lattice-matched Pt/Au-In{sub 0.17}Al{sub 0.83}N/GaN hetreojunction Schottky diodes with circular planar structure have been fabricated and investigated by temperature dependent electrical measurements. The forward and reverse current transport mechanisms are analyzed by fitting the experimental current-voltage characteristics of the devices with various models. The results show that (1) the forward-low-bias current is mainly due to the multiple trap-assisted tunneling, while the forward-high-bias current is governed by the thermionic emission mechanism with a significant series resistance effect; (2) the reverse leakage current under low electric fields (<6 MV/cm) is mainly carried by the Frenkel-Poole emission electrons, while at higher fields the Fowler-Nordheim tunneling mechanism dominates due to the formation of a triangular barrier.

  9. Monolayer WS{sub 2} crossed with an electro-spun PEDOT-PSS nano-ribbon: Fabricating a Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Ortiz, Deliris N.; Vedrine, Josee [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00791 (United States); Naylor, Carl H.; Charlie Johnson, A.T. [Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, PA 19104 (United States)

    2016-12-15

    Highlights: • First report on a Schottky diode formed from monolayer WS{sub 2} and PEDOT-PSSA nano-ribbon. • Straightforward and unique fabrication technique. • Diode operation is stable in air. - Abstract: WS{sub 2} and PEDOT-PSS were individually characterized with the goal of analyzing charge transport across a hetero-junction formed by these two materials. In thermal equilibrium electron flow from the WS{sub 2} conduction band into the polymer LUMO level leads to band bending that creates a potential barrier preventing further current. The measured current-voltage (I{sub DS}-V{sub DS}) curve across the hetero-junction was non-linear and asymmetric similar to a diode, with a turn-on voltage of 1.4 V and a rectification ratio of 12. The device I–V data were analyzed using the standard thermionic emission model of a Schottky junction and yielded an ideality parameter of 1.9 and a barrier height of 0.58 eV. This facile technique is the first report on a nano-diode fabricated using WS{sub 2} and PEDOT-PSS, opening up the possibility of extending this work to include other layered transition metal dichalcogenides and conducting polymers.

  10. The effect of samarium doping on structure and enhanced thermionic emission properties of lanthanum hexaboride fabricated by spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shenlin; Hu, Qianglin [College of Mathematics and Physics, Jinggangshan University, Jian (China); Zhang, Jiuxing; Liu, Danmin [Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing (China); Huang, Qingzhen [NIST Center for Neutron Research, National Institute of Standards and Technology, MD (United States)

    2014-03-15

    Single-phase polycrystalline solid solutions (La{sub 1-x}Sm{sub x})B{sub 6} (x = 0, 0.2, 0.4, 0.8, 1) are fabricated by spark plasma sintering (SPS). This study demonstrates a systematic investigation of structure-property relationships in Sm-doped LaB{sub 6} ternary rare-earth hexaborides. The microstructure, crystallographic orientation, electrical resistivity, and thermionic emission performance of these compounds are investigated. Analysis of the results indicates that samarium (Sm) doping has a noticeable effect on the structure and performance of lanthanum hexaboride (LaB{sub 6}). The analytical investigation of the electron backscatter diffraction confirms that (La{sub 0.6}Sm{sub 0.4})B{sub 6} exhibits a clear (001) texture that results in a low work function. Work functions are determined by pulsed thermionic diode measurements at 1500-1873 K. The (La{sub 0.6}Sm{sub 0.4})B{sub 6} possesses improved thermionic emission properties compared to LaB{sub 6}. The current density of (La{sub 0.6}Sm{sub 0.4})B{sub 6} is 42.4 A cm{sup -2} at 1873 K, which is 17.5% larger than that of LaB{sub 6}. The values of Φ{sub R} for (La{sub 0.6}Sm{sub 0.4})B{sub 6} and LaB{sub 6} are 1.98 ± 0.03 and 1.67 ± 0.03 eV, respectively. Furthermore, the Sm substitution of lanthanum (La) effectively increases the electrical resistivity. These results reveal that Sm doping lead to significantly enhanced thermionic emission properties of LaB{sub 6}. The compound (La{sub 0.6}Sm{sub 0.4})B{sub 6} appears most promising as a future emitter material. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Light extraction in planar light-emitting diode with nonuniform current injection: model and simulation.

    Science.gov (United States)

    Khmyrova, Irina; Watanabe, Norikazu; Kholopova, Julia; Kovalchuk, Anatoly; Shapoval, Sergei

    2014-07-20

    We develop an analytical and numerical model for performing simulation of light extraction through the planar output interface of the light-emitting diodes (LEDs) with nonuniform current injection. Spatial nonuniformity of injected current is a peculiar feature of the LEDs in which top metal electrode is patterned as a mesh in order to enhance the output power of light extracted through the top surface. Basic features of the model are the bi-plane computation domain, related to other areas of numerical grid (NG) cells in these two planes, representation of light-generating layer by an ensemble of point light sources, numerical "collection" of light photons from the area limited by acceptance circle and adjustment of NG-cell areas in the computation procedure by the angle-tuned aperture function. The developed model and procedure are used to simulate spatial distributions of the output optical power as well as the total output power at different mesh pitches. The proposed model and simulation strategy can be very efficient in evaluation of the output optical performance of LEDs with periodical or symmetrical configuration of the electrodes.

  12. Lead Halide Perovskite Photovoltaic as a Model p-i-n Diode.

    Science.gov (United States)

    Miyano, Kenjiro; Tripathi, Neeti; Yanagida, Masatoshi; Shirai, Yasuhiro

    2016-02-16

    The lead halide perovskite photovoltaic cells, especially the iodide compound CH3NH3PbI3 family, exhibited enormous progress in the energy conversion efficiency in the past few years. Although the first attempt to use the perovskite was as a sensitizer in a dye-sensitized solar cell, it has been recognized at the early stage of the development that the working of the perovskite photovoltaics is akin to that of the inorganic thin film solar cells. In fact, theoretically perovskite is always treated as an ordinary direct band gap semiconductor and hence the perovskite photovoltaics as a p-i-n diode. Despite this recognition, research effort along this line of thought is still in pieces and incomplete. Different measurements have been applied to different types of devices (different not only in the materials but also in the cell structures), making it difficult to have a coherent picture. To make the situation worse, the perovskite photovoltaics have been plagued by the irreproducible optoelectronic properties, most notably the sweep direction dependent current-voltage relationship, the hysteresis problem. Under such circumstances, it is naturally very difficult to analyze the data. Therefore, we set out to make hysteresis-free samples and apply time-tested models and numerical tools developed in the field of inorganic semiconductors. A series of electrical measurements have been performed on one type of CH3NH3PbI3 photovoltaic cells, in which a special attention was paid to ensure that their electronic reproducibility was better than the fitting error in the numerical analysis. The data can be quantitatively explained in terms of the established models of inorganic semiconductors: current/voltage relationship can be very well described by a two-diode model, while impedance spectroscopy revealed the presence of a thick intrinsic layer with the help of a numerical solver, SCAPS, developed for thin film solar cell analysis. These results point to that CH3NH3PbI3 is an

  13. New features of the MAX IV thermionic pre-injector

    Energy Technology Data Exchange (ETDEWEB)

    Andersson, J., E-mail: joel.andersson@maxiv.lu.se; Olsson, D., E-mail: david.olsson@maxiv.lu.se; Curbis, F.; Malmgren, L.; Werin, S.

    2017-05-21

    The MAX IV facility in Lund, Sweden consists of two storage rings for production of synchrotron radiation. The smaller 1.5 GeV ring is presently under construction, while the larger 3 GeV ring is being commissioned. Both rings will be operating with top-up injections from a full-energy injector. During injection, the electron beam is first delivered to the main injector from a thermionic pre-injector which consists of a thermionic RF gun, a chopper system, and an energy filter. In order to reduce losses of high-energy electrons along the injector and in the rings, the electron beam provided by the thermionic pre-injector should have the correct time structure and energy distribution. In this paper, the design of the MAX IV thermionic pre-injector with all its sub components is presented. The electron beam delivered by the pre-injector and its dependence on parameters such as optics, cathode temperature, and RF power are studied. Measurements are here compared with simulation results obtained by particle tracking and electromagnetic codes. The chopper system is described in detail, and different driving schemes that optimize the injection efficiency for the two storage rings are investigated. During operation, it was discovered that the structure of the beam delivered by the gun is affected by mode beating between the accelerating and a low-order mode. This mode beating is also studied in detail. Finally, initial measurements of the electron beam delivered to the 3 GeV ring during commissioning are presented.

  14. Small ex-core heat pipe thermionic reactor concept (SEHPTR)

    International Nuclear Information System (INIS)

    Jacox, M.G.; Bennett, R.G.; Lundberg, L.B.; Miller, B.G.; Drexler, R.L.

    1991-01-01

    The Idaho National Engineering Laboratory (INEL) has developed an innovative space nuclear power concept with unique features and significant advantages for both Defense and Civilian space missions. The Small Ex-core Heat Pipe Thermionic Reactor (SEHPTR) concept was developed in response to Air Force needs for space nuclear power in the range of 10 to 40 kilowatts. This paper describes the SEHPTR concept and discusses the key technical issues and advantages of such a system

  15. THERMIONIC EMISSION ENHANCEMENT FROM CESIUM COATED RHENIUM IN ELECTRIC FIELDS

    Energy Technology Data Exchange (ETDEWEB)

    de Steese, J. G.; Zollweg, R. J.

    1963-04-15

    The plasma-anode technique was used to observe anomalously high thermionic emission from a rhenium surface with small cesium coverage, where the work function of the composite surface is greater than the ionization potential of cesium. Data suggest that emission enhancement is caused by increased cesium coverage because of cesiumion trapping near the emitter surface under the influence of an ion-rich sheath. (auth)

  16. Development of integrated thermionic circuits for high-temperature applications

    International Nuclear Information System (INIS)

    McCormick, J.B.; Wilde, D.; Depp, S.; Hamilton, D.J.; Kerwin, W.; Derouin, C.; Roybal, L.; Dooley, R.

    1981-01-01

    A class of devices known as integrated thermionic circuits (ITC) capable of extended operation in ambient temperatures up to 500 0 C is described. The evolution of the ITC concept is discussed. A set of practical design and performance equations is demonstrated. Recent experimental results are discussed in which both devices and simple circuits have successfully operated in 500 0 C environments for extended periods of time

  17. Theoretical studies of thermionic conversion of solar energy with graphene as emitter and collector

    Science.gov (United States)

    Olawole, Olukunle C.; De, Dilip Kumar

    2018-01-01

    Thermionic energy conversion (TEC) using nanomaterials is an emerging field of research. It is known that graphene can withstand temperatures as high as 4600 K in vacuum, and it has been shown that its work function can be engineered from a high value (for monolayer/bilayer) of 4.6 eV to as low as 0.7 eV. Such attractive electronic properties (e.g., good electrical conductivity and high dielectric constant) make engineered graphene a good candidate as an emitter and collector in a thermionic energy converter for harnessing solar energy efficiently. We have used a modified Richardson-Dushman equation and have adopted a model where the collector temperature could be controlled through heat extraction in a calculated amount and a magnet can be attached on the back surface of the collector for future control of the space-charge effect. Our work shows that the efficiency of solar energy conversion also depends on power density falling on the emitter surface, and that a power conversion efficiency of graphene-based solar TEC as high as 55% can be easily achieved (in the absence of the space-charge effect) through proper choice of work functions, collector temperature, and emissivity of emitter surfaces. Such solar energy conversion would reduce our dependence on silicon solar panels and offers great potential for future renewable energy utilization.

  18. Geometry modeling of single track cladding deposited by high power diode laser with rectangular beam spot

    Science.gov (United States)

    Liu, Huaming; Qin, Xunpeng; Huang, Song; Hu, Zeqi; Ni, Mao

    2018-01-01

    This paper presents an investigation on the relationship between the process parameters and geometrical characteristics of the sectional profile for the single track cladding (STC) deposited by High Power Diode Laser (HPDL) with rectangle beam spot (RBS). To obtain the geometry parameters, namely cladding width Wc and height Hc of the sectional profile, a full factorial design (FFD) of experiment was used to conduct the experiments with a total of 27. The pre-placed powder technique has been employed during laser cladding. The influence of the process parameters including laser power, powder thickness and scanning speed on the Wc and Hc was analyzed in detail. A nonlinear fitting model was used to fit the relationship between the process parameters and geometry parameters. And a circular arc was adopted to describe the geometry profile of the cross-section of STC. The above models were confirmed by all the experiments. The results indicated that the geometrical characteristics of the sectional profile of STC can be described as the circular arc, and the other geometry parameters of the sectional profile can be calculated only using Wc and Hc. Meanwhile, the Wc and Hc can be predicted through the process parameters.

  19. EDGE EFFECT MODELING AND STUDY FOR THREE-CHIP RGB LIGHT-EMITTING DIODES

    Directory of Open Access Journals (Sweden)

    A. I. Podosinnikov

    2015-03-01

    Full Text Available Subject of study. The paper deals with light quality improvement of multi–chip RGB light-emitting diodes (LEDs and luminaries on their basis. In particular, we have studied the issues of the edge effect reducing, which is non–uniformity of color when observing the source of light under different angles as well as non-uniformity of color distribution on the illuminated surface. Methods. Experimental study of the edge effect has been performed, namely, the analysis of the halo at the periphery of the illuminated area and the non–uniformity of area at the surface of the screen illuminated with RGB LEDs with and without light concentrators. Modeling of illumination distribution at various distances from the source for the system containing four RGB LEDs with reflectors by ZEMAX software has been carried out. Assessment of the uniformity for light distribution via calculating the chromaticity coordinates has been performed. Main results. The possibility of modeling application at the stage of a luminary design is shown on the example of RGB LEDs for assessing the efficiency of light flux usage and colorimetric parameters. Suggested method simplifies significantly the design of luminaries and reduces associated costs. Practical relevance. The findings can be used in the design of luminaries based on RGB LEDs, including the ones with secondary optics elements.

  20. Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

    Science.gov (United States)

    Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

    1999-01-01

    We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

  1. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates

    Science.gov (United States)

    Chandra, Nishant; Tracy, Clarence J.; Cho, Jeong-Hyun; Picraux, S. T.; Hathwar, Raghuraj; Goodnick, Stephen M.

    2015-07-01

    The processing and performance of Schottky diodes formed from arrays of vertical Ge nanowires (NWs) grown on Ge and Si substrates are reported. The goal of this work is to investigate CMOS compatible processes for integrating NWs as components of vertically scaled integrated circuits, and elucidate transport in vertical Schottky NWs. Vertical phosphorus (P) doped Ge NWs were grown using vapor-liquid-solid epitaxy, and nickel (Ni)-Ge Schottky contacts were made to the tops of the NWs. Current-voltage (I-V) characteristics were measured for variable ranges of NW diameters and numbers of nanowires in the arrays, and the I-V characteristics were fit using modified thermionic emission theory to extract the barrier height and ideality factor. As grown NWs did not show rectifying behavior due to the presence of heavy P side-wall doping during growth, resulting in a tunnel contact. After sidewall etching using a dilute peroxide solution, rectifying behavior was obtained. Schottky barrier heights of 0.3-0.4 V and ideality factors close to 2 were extracted using thermionic emission theory, although the model does not give an accurate fit across the whole bias range. Attempts to account for enhanced side-wall conduction due to non-uniform P doping profile during growth through a simple shunt resistance improve the fit, but are still insufficient to provide a good fit. Full three-dimensional numerical modeling using Silvaco Atlas indicates that at least part of this effect is due to the presence of fixed charge and acceptor like traps on the NW surface, which leads to effectively high ideality factors.

  2. Space-charge-limited-current diode model for amorphous silicon solar cell degradation

    International Nuclear Information System (INIS)

    Partain, L.D.

    1987-01-01

    A space-charge-limited-current (SCLI) diode model for trap controlled rectification in the dark is extended to a continuous trap distribution for p-i-n a-Si:H solar cells in the light. Light degradation, thermal annealing recovery, and 10% efficient device data are quantitatively fit with i layer, conduction electron concentrations between 1.95 (10 11 ) and 1.90 (10 12 ) cm -3 and band gap trap concentration densities between 7.66 (10 14 ) and 1.14 (10 18 ) cm -3 ev -1 for 0.2 to 0.5 eV below the conduction band edge (E/sub c/). Light exposure increased the trap density at 0.4 eV below E/sub c/ by a factor of 7. Annealing decreased the distance of the peak trap density from E/sub c/ by 0.2 eV. These results agree with trap distributions measured with field effect, DLTS, and ICTS and with theoretical models based on dangling bonds or on defect rearrangements. The model indicates that a minimum peak amplitude of 10 17 cm -3 eV -1 of trapping states is required at about 0.5 eV below E/sub c/ for high fill factors (FF) and open circuit voltages (V/sub oc/). Improved FF values of 0.76 are predicted for trap densities below 10 15 cm -3 eV -1 at 0.2 to 0.4 eV below E/sub c/. Increased V/sub oc/ values of 0.99 V are predicted for a peak trap density of 3.5 (10 17 ) cm -3 eV -1 at 0.5 eV below E/sub c/

  3. Asymptotic Solution of a Model for Bilayer Organic Diodes and Solar Cells

    KAUST Repository

    Richardson, Giles

    2012-11-15

    Organic diodes and solar cells are constructed by placing together two organic semiconducting materials with dissimilar electron affinities and ionization potentials. The electrical behavior of such devices has been successfully modeled numerically using conventional drift diffusion together with recombination (which is usually assumed to be bimolecular) and thermal generation. Here a particular model is considered and the dark current-voltage curve and the spatial structure of the solution across the device is extracted analytically using asymptotic methods. We concentrate on the case of Shockley-Read-Hall recombination but note the extension to other recombination mechanisms. We find that there are three regimes of behavior, dependent on the total current. For small currents-i.e., at reverse bias or moderate forward bias-the structure of the solution is independent of the total current. For large currents-i.e., at strong forward bias-the current varies linearly with the voltage and is primarily controlled by drift of charges in the organic layers. There is then a narrow range of currents where the behavior undergoes a transition between the two regimes. The magnitude of the parameter that quantifies the interfacial recombination rate is critical in determining where the transition occurs. The extension of the theory to organic solar cells generating current under illumination is discussed as is the analogous current-voltage curves derived where the photo current is small. Finally, by comparing the analytic results to real experimental data, we show how the model parameters can be extracted from the shape of current-voltage curves measured in the dark. © 2012 Society for Industrial and Applied Mathematics.

  4. Asymptotic Solution of a Model for Bilayer Organic Diodes and Solar Cells

    KAUST Repository

    Richardson, Giles; Please, Colin; Foster, Jamie; Kirkpatrick, James

    2012-01-01

    Organic diodes and solar cells are constructed by placing together two organic semiconducting materials with dissimilar electron affinities and ionization potentials. The electrical behavior of such devices has been successfully modeled numerically using conventional drift diffusion together with recombination (which is usually assumed to be bimolecular) and thermal generation. Here a particular model is considered and the dark current-voltage curve and the spatial structure of the solution across the device is extracted analytically using asymptotic methods. We concentrate on the case of Shockley-Read-Hall recombination but note the extension to other recombination mechanisms. We find that there are three regimes of behavior, dependent on the total current. For small currents-i.e., at reverse bias or moderate forward bias-the structure of the solution is independent of the total current. For large currents-i.e., at strong forward bias-the current varies linearly with the voltage and is primarily controlled by drift of charges in the organic layers. There is then a narrow range of currents where the behavior undergoes a transition between the two regimes. The magnitude of the parameter that quantifies the interfacial recombination rate is critical in determining where the transition occurs. The extension of the theory to organic solar cells generating current under illumination is discussed as is the analogous current-voltage curves derived where the photo current is small. Finally, by comparing the analytic results to real experimental data, we show how the model parameters can be extracted from the shape of current-voltage curves measured in the dark. © 2012 Society for Industrial and Applied Mathematics.

  5. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers

    International Nuclear Information System (INIS)

    Farhat, Patricia Bahls de Almeida

    2003-01-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  6. Surgical treatment of cerebral ischemia by means of diode laser: first experimental results and comparison with theoretical model

    Science.gov (United States)

    Signorelli, C. D.; Giaquinta, A.; Iofrida, G.; Donato, G.; Signorelli, Fr.; Bellecci, C.; Lo Feudo, T.; Gaudio, P.; Gelfusa, M.

    2007-07-01

    In the present paper feasibility and potential advantages of using diode laser for surgical treatment of cerebral ischemia and intracranial aneurysms will be evaluated. At this purpose non linear mathematical model was developed and experimentally validated to investigate the effects of the changes in tissue physical properties, in terms of operating time, tensile strength and tissue damage during medical laser application. The numerical simulations have been carried on by a finite-elements based software package (FEMLAB). In vitro results of human saphenous veins of inferior limbs (n=55) after 799 nm diode laser soldering, combined with an indocyanine green-enhanced, will be presented. The simulations results and their comparison with experimental measurements will be reported.

  7. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

    International Nuclear Information System (INIS)

    Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

    2004-01-01

    High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

  8. The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, A V [Kurchatov Institute, Moscow (Russian Federation). Nuclear Fusion Institute

    1997-12-31

    The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m{sub e}c{sup 2} {>=} 1 were investigated, where the magnetic Debye length r{sub B} is of the order of the collisionless electron skin depth c/{omega}{sub pe}. For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs.

  9. The vortex-like self-consistent electron fluid model by the applied-B ion diode: equilibrium and instability

    International Nuclear Information System (INIS)

    Gordeev, A.V.

    1996-01-01

    The electron inertia effects in the one-dimensional model of the applied-B ion diode for the relativistic diode potential eU/m e c 2 ≥ 1 were investigated, where the magnetic Debye length r B is of the order of the collisionless electron skin depth c/ω pe . For this, an analytical relation between the magnetic field and the electric potential was developed, owing to which the second order eigenvalue problem can be reduced to a system of algebraic equations. Instabilities inside the vacuum gap and in the near-anode emitting plasma are considered. In the near-anode Hall plasma, the instability with two ion species was obtained; this can can contribute to the ion angle divergence. (author). 10 refs

  10. A new time-dependent analytic model for radiation-induced photocurrent in finite 1D epitaxial diodes.

    Energy Technology Data Exchange (ETDEWEB)

    Verley, Jason C.; Axness, Carl L.; Hembree, Charles Edward; Keiter, Eric Richard; Kerr, Bert (New Mexico Institute of Mining and Technology, Socorro, NM)

    2012-04-01

    Photocurrent generated by ionizing radiation represents a threat to microelectronics in radiation environments. Circuit simulation tools such as SPICE [1] can be used to analyze these threats, and typically rely on compact models for individual electrical components such as transistors and diodes. Compact models consist of a handful of differential and/or algebraic equations, and are derived by making simplifying assumptions to any of the many semiconductor transport equations. Historically, many photocurrent compact models have suffered from accuracy issues due to the use of qualitative approximation, rather than mathematically correct solutions to the ambipolar diffusion equation. A practical consequence of this inaccuracy is that a given model calibration is trustworthy over only a narrow range of operating conditions. This report describes work to produce improved compact models for photocurrent. Specifically, an analytic model is developed for epitaxial diode structures that have a highly doped subcollector. The analytic model is compared with both numerical TCAD calculations, as well as the compact model described in reference [2]. The new analytic model compares well against TCAD over a wide range of operating conditions, and is shown to be superior to the compact model from reference [2].

  11. Evidence for cluster shape effects on the kinetic energy spectrum in thermionic emission.

    Science.gov (United States)

    Calvo, F; Lépine, F; Baguenard, B; Pagliarulo, F; Concina, B; Bordas, C; Parneix, P

    2007-11-28

    Experimental kinetic energy release distributions obtained for the thermionic emission from C(n) (-) clusters, 10theory, these different features are analyzed and interpreted as the consequence of contrasting shapes in the daughter clusters; linear and nonlinear isomers have clearly distinct signatures. These results provide a novel indirect structural probe for atomic clusters associated with their thermionic emission spectra.

  12. DEXTER: A one-dimensional code for calculating thermionic performance of long converters

    Science.gov (United States)

    Sawyer, C. D.

    1971-01-01

    A versatile code is described for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are included along with a user's manual.

  13. Dexter - A one-dimensional code for calculating thermionic performance of long converters.

    Science.gov (United States)

    Sawyer, C. D.

    1971-01-01

    This paper describes a versatile code for computing the coupled thermionic electric-thermal performance of long thermionic converters in which the temperature and voltage variations cannot be neglected. The code is capable of accounting for a variety of external electrical connection schemes, coolant flow paths and converter failures by partial shorting. Example problem solutions are given.

  14. Gridded thermionic gun and integral superconducting ballistic bunch compression cavity

    Energy Technology Data Exchange (ETDEWEB)

    Schultheiss, Thomas [Advanced Energy Systems, Inc., Medford, NY (United States)

    2015-11-16

    Electron-Ion colliders such as the Medium energy Electron Ion Collider (MEIC) being developed by JLAB require high current electrons with low energy spread for electron cooling of the collider ring. Accelerator techniques for improving bunch charge, average current, emittance, and energy spread are required for Energy Recovery Linacs (ERLs) and Circulator Rings (CR) for next generation colliders for nuclear physics experiments. Example candidates include thermionic-cathode electron guns with RF accelerating structures. Thermionic cathodes are known to produce high currents and have excellent lifetime. The success of the IR and THz Free-Electron Laser (FEL) designed and installed by Advanced Energy Systems at the Fritz Haber Institute (FHI) of the Max Planck Society in Berlin [1,2] demonstrates that gridded thermionic cathodes and rf systems be considered for next generation collider technology. In Phase 1 Advanced Energy Systems (AES) developed and analyzed a design concept using a superconducting cavity pair and gridded thermionic cathode. Analysis included Beam Dynamics and thermal analysis to show that a design of this type is feasible. The latest design goals for the MEIC electron cooler were for electron bunches of 420 pC at a frequency of 952.6 MHz with a magnetic field on the cathode of 2kG. This field magnetizes the beam imparting angular momentum that provides for helical motion of the electrons in the cooling solenoid. The helical motion increases the interaction time and improves the cooling efficiency. A coil positioned around the cathode providing 2kG field was developed. Beam dynamics simulations were run to develop the particle dynamics near the cathode and grid. Lloyd Young added capability to Tstep to include space charge effects between two plates and include image charge effects from the grid. He also added new pepper-pot geometry capability to account for honeycomb grids. These additions were used to develop the beam dynamics for this gun. The

  15. Near-field enhanced thermionic energy conversion for renewable energy recycling

    Science.gov (United States)

    Ghashami, Mohammad; Cho, Sung Kwon; Park, Keunhan

    2017-09-01

    This article proposes a new energy harvesting concept that greatly enhances thermionic power generation with high efficiency by exploiting the near-field enhancement of thermal radiation. The proposed near-field enhanced thermionic energy conversion (NETEC) system is uniquely configured with a low-bandgap semiconductor cathode separated from a thermal emitter with a subwavelength gap distance, such that a significant amount of electrons can be photoexcited by near-field thermal radiation to contribute to the enhancement of thermionic current density. We theoretically demonstrate that the NETEC system can generate electric power at a significantly lower temperature than the standard thermionic generator, and the energy conversion efficiency can exceed 40%. The obtained results reveal that near-field photoexcitation can enhance the thermionic power output by more than 10 times, making this hybrid system attractive for renewable energy recycling.

  16. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    OpenAIRE

    H. MAZARI; K. AMEUR; N. BENSEDDIK; Z. BENAMARA; R. KHELIFI; M. MOSTEFAOUI; N. ZOUGAGH; N. BENYAHYA; R. BECHAREF; G. BASSOU; B. GRUZZA; J. M. BLUET; C. BRU-CHEVALLIER

    2014-01-01

    The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semicondu...

  17. Model for Generation of Neutrons in a Compact Diode with Laser-Plasma Anode and Suppression of Electron Conduction Using a Permanent Cylindrical Magnet

    Science.gov (United States)

    Shikanov, A. E.; Vovchenko, E. D.; Kozlovskii, K. I.; Rashchikov, V. I.; Shatokhin, V. L.

    2018-04-01

    A model for acceleration of deuterons and generation of neutrons in a compact laser-plasma diode with electron isolation using magnetic field generated by a hollow cylindrical permanent magnet is presented. Experimental and computer-simulated neutron yields are compared for the diode structure under study. An accelerating neutron tube with a relatively high neutron generation efficiency can be constructed using suppression of electron conduction with the aid of a magnet placed in the vacuum volume.

  18. Nano-textured W shows improvement of thermionic emission properties

    Energy Technology Data Exchange (ETDEWEB)

    Barmina, E.V.; Serkov, A.A.; Shafeev, G.A. [General Physics Institute of the Russian Academy of Sciences, Wave Research Center of A.M. Prokhorov, Moscow (Russian Federation); Stratakis, E. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Materials Science and Technology Department, Heraklion (Greece); Fotakis, C. [Institute of Electronic Structure and Laser, Foundation for Research and Technology - Hellas, (IESL-FORTH), Heraklion (Greece); University of Crete, Physics Department, Heraklion (Greece); Stolyarov, V.N.; Stolyarov, I.N. [Roentgenprom, Protvino, Moscow (Russian Federation)

    2012-01-15

    Laser-assisted nano-texturing of W substrates cathodes via ablation in liquid environment is experimentally realized. Two laser sources are used, either a Ti:sapphire femtosecond laser or a Nd:YAG laser with pulse duration of 350 ps. Laser exposure of W results in the formation of hemi-spherical nanostructures situated on top of periodic ripples. Nano-textured thermionic W cathode demonstrates the decrease of the efficient work function by 0.3 eV compared to pristine surface. (orig.)

  19. Design and operation of a thermionic converter in air

    International Nuclear Information System (INIS)

    Horner, M.H.; Begg, L.L.; Smith, J.N. Jr.; Geller, C.B.; Kallnowski, J.E.

    1995-01-01

    An electrically heated thermionic converter has been designed, built and successfully tested in air. Several unique features were incorporated in this converter: an integral cesium reservoir, innovative ceramic-to-metal seals, a heat rejection system coupling the collector to a low temperature heat sink and an innovative cylindrical heater filament. The converter was operated for extended periods of time with the emitter at about 1900 K. the collector at about 700 K, and a power density of over 2 w(e)/sq. cm. Input power transients were run between 50% and 100% thermal power, at up to 1% per second, without instabilities in performance

  20. Multi-channel pulser for the SLC thermionic electron source

    International Nuclear Information System (INIS)

    Browne, M.J.; Clendenin, J.E.; Corredoura, P.L.; Jobe, R.K.; Koontz, R.F.; Sodja, J.

    1985-01-01

    A new pulser developed for the SLC thermionic gun has been operational since September 1984. It consists of two planar triode amplifiers with a common output triode driving the gun cathode to produce two independent pulses of up to 9A with a 3 nsec FWHM pulse width. Three long-pulse amplifiers are also connected to the cathode to produce pulses with widths controllable between 100 nsec and 1.6 μsec. Each amplifier has independent timing and amplitude control through a fiber optic link to the high voltage plane of the gun cathode-grid structure. The pulser and its operating characteristics are described. 15 refs., 3 figs

  1. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    Science.gov (United States)

    Patil, Jagadish G.; Vijayan, T.

    2010-02-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 102-106 m-3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  2. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    Energy Technology Data Exchange (ETDEWEB)

    Patil, Jagadish G; Vijayan, T, E-mail: jagdishlove@gmail.co [Mahatma Education Society' s ' Pillai' s Institute of Information Technology, Engineering, Media Studies and Research' Dr. K M Vasudevan Pillai' s Campus, Sector 16, New Panvel, Navi Mumbai - 410 206 (India)

    2010-02-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over {mu}A) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 10{sup 2}-10{sup 6} m{sup -3} are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  3. Three-dimensional modeling of charge transport, injection and recombination in organic light-emitting diodes

    NARCIS (Netherlands)

    Holst, van der J.J.M.

    2010-01-01

    Organic light-emitting diodes (OLEDs) are ideally suited for lighting and display applications. Commercial OLED displays as well as OLED white-light sources are presently being introduced to the market. Essential electronic processes in OLEDs are the injection of electrons and holes into an organic

  4. Color Shift Modeling of Light-Emitting Diode Lamps in Step-Loaded Stress Testing

    NARCIS (Netherlands)

    Cai, Miao; Yang, Daoguo; Huang, J.; Zhang, Maofen; Chen, Xianping; Liang, Caihang; Koh, S.W.; Zhang, G.Q.

    2017-01-01

    The color coordinate shift of light-emitting diode (LED) lamps is investigated by running three stress-loaded testing methods, namely step-up stress accelerated degradation testing, step-down stress accelerated degradation testing, and constant stress accelerated degradation testing. A power

  5. Modeling and characterization of field-enhanced corona discharge in ozone-generator diode

    International Nuclear Information System (INIS)

    Patil, Jagadish G; Vijayan, T

    2010-01-01

    Electric field enhanced corona plasma discharge in ozone generator diode of axial symmetry has been investigated and characterized in theory. The cathode K of diode is made of a large number of sharpened nozzles arranged on various radial planes on the axial mast and pervaded in oxygen gas inside the anode cup A, produces high fields over MV/m and aids in the formation of a corona plume of dense ozone cloud over the cathode surface. An r-z finite difference scheme has been devised and employed to numerically determine the potential and electric field distributions inside the diode. The analyses of cathode emissions revealed a field emission domain conformed to modified Child-Langmuir diode-current. Passage of higher currents (over μA) in shorter A-K gaps d gave rise to cathode heated plasma extending from the corona to Saha regimes depending on local temperature. Plasma densities of order 10 2 -10 6 m -3 are predicted in these. For larger d however, currents are smaller and heating negligible and a negative corona favoring ozone formation is attained. High ozone yields about 20 per cent of oxygen input is predicted in this domain. The generator so developed will be applied to various important applications such as, purification of ambient air /drinking water, ozone therapy, and so on.

  6. Current transmission and nonlinear effects in un-gated thermionic cathode RF guns

    Energy Technology Data Exchange (ETDEWEB)

    Edelen, J. P. [Fermilab; Harris, J. R. [Air Force Weapons Lab

    2017-05-03

    Un-gated thermionic cathode RF guns are well known as a robust source of electrons for many accelerator applications. These sources are in principle scalable to high currents without degradation of the transverse emittance due to control grids but they are also known for being limited by back-bombardment. While back-bombardment presents a significant limitation, there is still a lack of general understanding on how emission over the whole RF period will affect the nature of the beams produced from these guns. In order to improve our understanding of how these guns can be used in general we develop analytical models that predict the transmission efficiency as a function of the design parameters, study how bunch compression and emission enhancement caused by Schottky barrier lowering affect the output current profile in the gun, and study the onset of space-charge limited effects and the resultant virtual cathode formation leading to a modulation in the output current distribution.

  7. Thermionic cooling devices based on resonant-tunneling AlGaAs/GaAs heterostructure

    Science.gov (United States)

    Bescond, M.; Logoteta, D.; Michelini, F.; Cavassilas, N.; Yan, T.; Yangui, A.; Lannoo, M.; Hirakawa, K.

    2018-02-01

    We study by means of full quantum simulations the operating principle and performance of a semiconductor heterostructure refrigerator combining resonant tunneling filtering and thermionic emission. Our model takes into account the coupling between the electric and thermal currents by self-consistently solving the transport equations within the non-equilibrium Green’s function framework and the heat equation. We show that the device can achieve relatively high cooling power values, while in the considered implementation, the maximum lattice temperature drop is severely limited by the thermal conductivity of the constituting materials. In such an out-of-equilibrium structure, we then emphasize the significant deviation of the phonon temperature from its electronic counterpart which can vary over several hundred Kelvin. The interplay between those two temperatures and the impact on the electrochemical potential is also discussed. Finally, viable options toward an optimization of the device are proposed.

  8. Electric strength of metal-ceramic brazed units of thermionic energy converters in cesium vapours

    International Nuclear Information System (INIS)

    Belousenko, A.P.; Vasilchenko, A.V.; Nikolaev, Y.V.

    1989-01-01

    The investigation of electric strength characteristics of the hollow metal-ceramic brazed units of thermionic energy converters with the insulator 1 = 10-50 mm from polycrystal aluminum oxide at the temperature T = 450-750 degrees and the cesium vapour pressure P Cs = 10 - 1 -10 3 Pa has been carried out. The experimental dependencies of the break-down voltage of the brazed units on the temperature, parameter P Cs · 1 and the value of surface electric resistance of the insulators are given as well as the empiric equations obtained with the help of experimental data for calculating the break-down voltage. A mechanism of ceramic insulator influence on electric strength characteristics of the cesium gap is investigated. A breakdown model explaining this influence is proposed

  9. Diode laser-induced tissue effects: in vitro tissue model study and in vivo evaluation of wound healing following non-contact application.

    Science.gov (United States)

    Havel, Miriam; Betz, Christian S; Leunig, Andreas; Sroka, Ronald

    2014-08-01

    The basic difference between the various common medical laser systems is the wavelength of the emitted light, leading to altered light-tissue interactions due to the optical parameters of the tissue. This study examines laser induced tissue effects in an in vitro tissue model using 1,470 nm diode laser compared to our standard practice for endonasal applications (940 nm diode laser) under standardised and reproducible conditions. Additionally, in vivo induced tissue effects following non-contact application with focus on mucosal healing were investigated in a controlled intra-individual design in patients treated for hypertrophy of nasal turbinate. A certified diode laser system emitting the light of λ = 1470 nm was evaluated with regards to its tissue effects (ablation, coagulation) in an in vitro setup on porcine liver and turkey muscle tissue model. To achieve comparable macroscopic tissue effects the laser fibres (600 µm core diameter) were fixed to a computer controlled stepper motor and the laser light was applied in a reproducible procedure under constant conditions. For the in vivo evaluation, 20 patients with nasal obstruction due to hyperplasia of inferior nasal turbinates were included in this prospective randomised double-blinded comparative trial. The endoscopic controlled endonasal application of λ = 1470 nm on the one and λ = 940 nm on the other side, both in 'non-contact' mode, was carried out as an outpatient procedure under local anaesthesia. The postoperative wound healing process (mucosal swelling, scab formation, bleeding, infection) was endoscopically documented and assessed by an independent physician. In the experimental setup, the 1,470 nm laser diode system proved to be efficient in inducing tissue effects in non-contact mode with a reduced energy factor of 5-10 for highly perfused liver tissue to 10-20 for muscle tissue as compared to the 940 nm diode laser system. In the in vivo evaluation scab formation

  10. X-Band Thermionic Cathode RF Gun at UTNL

    CERN Document Server

    Fukasawa, Atsushi; Dobashi, Katsuhiro; Ebina, Futaro; Hayano, Hitoshi; Higo, Toshiyasu; Kaneyasu, Tatsuo; Matsuo, Kennichi; Ogino, Haruyuki; Sakae, Hisaharu; Sakamoto, Fumito; Uesaka, Mitsuru; Urakawa, Junji

    2005-01-01

    The X-band (11.424 GHz) linac for compact Compton scattering hard X-ray source are under construction at Nuclear Engineering Research Laboratory, University of Tokyo. This linac designed to accelerate up to 35 MeV, and this electron beam will be used to produce hard X-ray by colliding with laser. It consists of a thermionic cathode RF gun, an alpha magnet, and a traveling wave tube. The gun has 3.5 cells (unloaded Q is 8250) and will be operated at pi-mode. A dispenser cathode is introduced. Since the energy spread of the beam from the gun is predicted to be broad due to the continuous emission from the thermionic cathode, a slit is placed in the alpha magnet to eliminate low energy electrons. The simulation on the injector shows the beam energy 2.9 MeV, the charge 23 pC/bunch, and the emittance less than 10 mm.mrad. The experiment on the gun is planed in the beginning of 2005, and the details will be discussed on the spot.

  11. Thermionic vacuum arc (TVA) technique for magnesium thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Balbag, M.Z., E-mail: zbalbag@ogu.edu.t [Eskisehir Osmangazi University, Education Faculty, Primary Education, Meselik Campus, Eskisehir 26480 (Turkey); Pat, S.; Ozkan, M.; Ekem, N. [Eskisehir Osmangazi University, Art and Science Faculty, Physics Department, Eskisehir 26480 (Turkey); Musa, G. [Ovidius University, Physics Department, Constanta (Romania)

    2010-08-15

    In this study, magnesium thin films were deposited on glass substrate by the Thermionic Vacuum Arc (TVA) technique for the first time. We present a different technique for deposition of high-quality magnesium thin films. By means of this technique, the production of films is achieved by condensing the plasma of anode material generated using Thermionic Vacuum Arc (TVA) under high vacuum conditions onto the surface to be coated. The crystal orientation and morphology of the deposited films were investigated by using XRD, EDX, SEM and AFM. The aim of this study is to search the use of TVA technique to coat magnesium thin films and to determine some of the physical properties of the films generated. Furthermore, this study will contribute to the scientific studies which search the thin films of magnesium or the compounds containing magnesium. In future, this study will be preliminary work to entirely produce magnesium diboride (MgB{sub 2}) superconductor thin film with the TVA technique.

  12. Thermionic emission of cermets made of refractory carbides

    International Nuclear Information System (INIS)

    Samsonow, G.W.; Bogomol, I.W.; Ochremtschuk, L.N.; Podtschernjajewa, I.A.; Fomenko, W.S.

    1975-01-01

    In order to improve the resistance to thermal variations of refractory carbides having good behavior for thermionic emission, they have been combined with transition metals d. Thermionic emission was studied with cermets in compact samples. Following systems were examined: TiC-Nb, TiC-Mo, TiC-W, ZrC-Nb, ZrC-Mo, ZrC-W, WC-Mo with compositions of: 75% M 1 C-25% M 2 , 50%M 1 C-50%M 2 , 25%M 1 C-75%M 2 . When following the variation of electron emission energy phi versus the composition, it appears that in the range of mixed crystals (M 1 M 2 )C, phi decreases and the resistance to thermal variations of these phases is higher than that of individual carbides. The study of obtained cermets shows that their resistance to thermal variations is largely superior to the one of starting carbides; TiC and ZrC carbides, combined with molybdenum and tungsten support the highest number of thermic cycles

  13. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Thermionic and Photo-excited Electron Emission for Energy Conversion Processes

    Directory of Open Access Journals (Sweden)

    Patrick T. McCarthy

    2014-12-01

    Full Text Available This article describes advances in thermionic and photoemission materials and applications dating back to the work on thermionic emission by Guthrie in 1873 and the photoelectric effect by Hertz in 1887. Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photoemission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk and surface structure.

  15. Thermionic and Photo-Excited Electron Emission for Energy-Conversion Processes

    Energy Technology Data Exchange (ETDEWEB)

    McCarthy, Patrick T. [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States); Reifenberger, Ronald G. [Birck Nanotechnology Center, School of Physics, Purdue University, West Lafayette, IN (United States); Fisher, Timothy S., E-mail: tsfisher@purdue.edu [Birck Nanotechnology Center, School of Mechanical Engineering, Purdue University, West Lafayette, IN (United States)

    2014-12-09

    This article describes advances in thermionic and photo-emission materials and applications dating back to the work on thermionic emission by Guthrie (1873) and the photoelectric effect by Hertz (1893). Thermionic emission has been employed for electron beam generation from Edison’s work with the light bulb to modern day technologies such as scanning and transmission electron microscopy. The photoelectric effect has been utilized in common devices such as cameras and photocopiers while photovoltaic cells continue to be widely successful and further researched. Limitations in device efficiency and materials have thus far restricted large-scale energy generation sources based on thermionic and photoemission. However, recent advances in the fabrication of nanoscale emitters suggest promising routes for improving both thermionic and photo-enhanced electron emission along with newly developed research concepts, e.g., photonically enhanced thermionic emission. However, the abundance of new emitter materials and reduced dimensions of some nanoscale emitters increases the complexity of electron-emission theory and engender new questions related to the dimensionality of the emitter. This work presents derivations of basic two and three-dimensional thermionic and photo-emission theory along with comparisons to experimentally acquired data. The resulting theory can be applied to many different material types regardless of composition, bulk, and surface structure.

  16. Temperature dependent current transport of Pd/ZnO nanowire Schottky diodes

    Science.gov (United States)

    Gayen, R. N.; Bhattacharyya, S. R.; Jana, P.

    2014-09-01

    Zinc oxide (ZnO) nanowire based Schottky barrier diodes are fabricated by depositing Pd metal contact on top of vertically well-aligned ZnO nanowire arrays. A vertical array of ZnO nanowires on indium tin oxide (ITO) coated glass substrates is synthesized by hybrid wet chemical route. Scanning electron microscopy (SEM), x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS) measurement confirm the formation of stoichiometric well-aligned hexagonal (h-ZnO) nanowire arrays with wurtzite structure. Temperature dependent current-voltage (I-V) measurements on palladium-ZnO (Pd/ZnO) nanowire Schottky junctions in the temperature range 303-383 K exhibit excellent rectifying character. From these nonlinear I-V plots, different electrical parameters of diode-like reverse saturation current, barrier height and ideality factor are determined as a function of temperature assuming pure thermionic emission model. The ideality factor is found to decrease while the barrier height increases with the increase in temperature. The series resistance values calculated from Cheung’s functions also show temperature dependency. Such behavior can be attributed to the presence of defects that traps carriers, and barrier height inhomogeneity at the interface of the barrier junction. After barrier height inhomogeneity correction, considering a Gaussian distributed barrier height fluctuation across the Pd/ZnO interface, the estimated values of mean barrier height and modified Richardson constant are more closely matched to the theoretically predicted value for Pd/ZnO Schottky barrier diodes. The variation of density of interface states as a function of interface state energy is also calculated.

  17. Graphite based Schottky diodes formed semiconducting substrates

    Science.gov (United States)

    Schumann, Todd; Tongay, Sefaattin; Hebard, Arthur

    2010-03-01

    We demonstrate the formation of semimetal graphite/semiconductor Schottky barriers where the semiconductor is either silicon (Si), gallium arsenide (GaAs) or 4H-silicon carbide (4H-SiC). The fabrication can be as easy as allowing a dab of graphite paint to air dry on any one of the investigated semiconductors. Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements, roughly follow the Schottky-Mott relation. Since the outermost layer of the graphite electrode is a single graphene sheet, we expect that graphene/semiconductor barriers will manifest similar behavior.

  18. The mechanism of explosive emission excitation in thermionic energy conversion processes

    Science.gov (United States)

    Bulyga, A. V.

    A study has been made of the mechanism of explosive electron emission in vacuum thermionic converters induced by thermionic currents in the case of the anomalous Richardson effect. The latter is associated with a spotted emitting surface and temperature fluctuations. In order to account for one of the components of the electrode potential difference, it is proposed that allowance be made for the difference between the polarization signal velocity in a dense metal electron gas and that in the electron-ion gas of the electrode gap. Ways to achieve explosive emission in real thermionic converters are discussed.

  19. The error analysis of the reverse saturation current of the diode in the modeling of photovoltaic modules

    International Nuclear Information System (INIS)

    Wang, Gang; Zhao, Ke; Qiu, Tian; Yang, Xinsheng; Zhang, Yong; Zhao, Yong

    2016-01-01

    In the modeling and simulation of photovoltaic modules, especially in calculating the reverse saturation current of the diode, the series and parallel resistances are often neglected, causing certain errors. We analyzed the errors at the open circuit point, and proposed an iterative algorithm to calculate the modified values of the reverse saturation current, series resistance and parallel resistance of the diode, in order to reduce the errors. Assuming independent irradiation and temperature effects, the irradiation-dependence and the temperature-dependence of the open circuit voltage were introduced to obtain the modified formula of the open circuit voltage under any condition. Experimental results show that this modified formula has high accuracy, even at irradiance as low as 40 W/m"2. The errors of open circuit voltage were significantly reduced, indicating that this modified model is suitable for simulations of photovoltaic modules. - Highlights: • We propose a new method for modeling PV modules with higher accuracy. • The errors of open circuit voltage are significantly reduced. • I_o under any condition is calculated.

  20. 100 years of the physics of diodes

    Science.gov (United States)

    Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

    2017-03-01

    The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

  1. A model of the generation and transport of ozone in high-tension nozzle driven corona inside a novel diode

    International Nuclear Information System (INIS)

    Vijayan, T.; Patil, Jagadish G.

    2012-01-01

    The genesis and transport of ozone (O 3 ) are investigated in a novel plasma diode and described in this paper. The innovative cathode (K) of this axial symmetric diode which operated at the high voltage (φ 0 ), has a large number of sharpened nozzles located on different radial planes of its central tubular-mast and is encircled by the anode (A). The nozzles played the dual role of oxygen (O 2 ) injection as well as creation of high electric field (E) in the A-K gap, enabled the formation of a cold corona. Electrons in the corona under the influence of E moved towards anode, collided with O 2 and created the O radicals. O in turn joined the free O 2 and formed O 3 . The evolution of O 3 here is modeled in various O 2 pressure (P), electron density (n e ), and temperature (T) in terms of the major reaction modes involving e, O, O 2 , and O 3 . Typical steady state O 3 density attained so in P ∼ bar, n e ∼ 10 15 m −3 and T∼ 300 K is over 10 25 m −3 and that of O lower ∼10 20 m −3 . Both the O and O 3 densities increased with an enhanced n e of avalanche multiplications in corona. O 3 increased also with a higher P but the temporal O reversed in trend midway and reduced with P towards the steady state. A sharp decline in diode resistance with smaller A-K gap induced finite discharge current and led to the undesired heating of corona. It is shown that the O 3 density reduced with the temperature rise but O density reduced with the T rise up to 500 K and then rose modestly with the further T increase.

  2. A model of the generation and transport of ozone in high-tension nozzle driven corona inside a novel diode

    Science.gov (United States)

    Vijayan, T.; Patil, Jagadish G.

    2012-12-01

    The genesis and transport of ozone (O3) are investigated in a novel plasma diode and described in this paper. The innovative cathode (K) of this axial symmetric diode which operated at the high voltage (ϕ0), has a large number of sharpened nozzles located on different radial planes of its central tubular-mast and is encircled by the anode (A). The nozzles played the dual role of oxygen (O2) injection as well as creation of high electric field (E) in the A-K gap, enabled the formation of a cold corona. Electrons in the corona under the influence of E moved towards anode, collided with O2 and created the O radicals. O in turn joined the free O2 and formed O3. The evolution of O3 here is modeled in various O2 pressure (P), electron density (ne), and temperature (T) in terms of the major reaction modes involving e, O, O2, and O3. Typical steady state O3 density attained so in P ˜ bar, ne ˜ 1015 m-3 and T ˜ 300 K is over 1025 m-3 and that of O lower ˜1020 m-3. Both the O and O3 densities increased with an enhanced ne of avalanche multiplications in corona. O3 increased also with a higher P but the temporal O reversed in trend midway and reduced with P towards the steady state. A sharp decline in diode resistance with smaller A-K gap induced finite discharge current and led to the undesired heating of corona. It is shown that the O3 density reduced with the temperature rise but O density reduced with the T rise up to 500 K and then rose modestly with the further T increase.

  3. Simulations of thermionic suppression during tungsten transient melting experiments.

    Czech Academy of Sciences Publication Activity Database

    Komm, Michael; Tolias, P.; Ratynskaia, S.; Dejarnac, Renaud; Gunn, J. P.; Krieger, K.; Podolník, Aleš; Pitts, R.A.; Pánek, Radomír

    T170, December (2017), č. článku 014069. ISSN 0031-8949. [PFMC 2017: 16th International Conference on Plasma-Facing Materials and Components for Fusion Applications. Düsseldorf, 16.05.2017-19.05.2017] R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : tokamak * thermionic emission * tungsten * melt * plasma-facing component Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: 1.3 Physical sciences Impact factor: 1.280, year: 2016 http://iopscience.iop.org/article/10.1088/1402-4896/aa9209

  4. A high-brightness thermionic microwave electron gun

    International Nuclear Information System (INIS)

    Borland, M.

    1991-02-01

    In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun's performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ''State-of-the-art'' microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of e c · μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 10 9 e - per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically e · μm

  5. A high-brightness thermionic microwave electron gun

    Energy Technology Data Exchange (ETDEWEB)

    Borland, Michael [Stanford Univ., CA (United States)

    1991-02-01

    In a collaborative effort by SSRL, AET Associates, and Varian Associates, a high-brightness microwave electron gun using a thermionic cathode has been designed, built, tested, and installed for use with the SSRL 150 MeV linear accelerator. This thesis discusses the physics behind the design and operation of the gun and associated systems, presenting predictions and experimental tests of the gun`s performance. The microwave gun concept is of increasing interest due to its promise of providing higher-current, lower-emittance electron beams than possible from conventional, DC gun technology. In a DC guns, accelerating gradients are less than 8 MV/m, while those in a microwave gun can exceed 100 MV/m, providing much more rapid initial acceleration, thereby reducing the deleterious effects of space-charge. Microwave guns produce higher momentum beams than DC guns, thus lessening space-charge effects during subsequent beam transport. Typical DC guns produce kinetic energies of 80--400 KeV, compared to 2--3 MeV for the SSRL microwave gun. ``State-of-the-art`` microwave gun designs employ laser-driven photocathodes, providing excellent performance but with greater complexity and monetary costs. A thermionic microwave gun with a magnetic bunching system is comparable in cost and complexity to a conventional system, but provides performance that is orders of magnitude better. Simulations of the SSRL microwave gun predict a normalized RMS emittance at the gun exist of < 10 π • mec • μm for a beam consisting of approximately 50% of the particles emitted from the gun, and having a momentum spread ±10%. These emittances are for up to 5 x 109e- per bunch. Chromatic aberrations in the transport line between the gun and linear accelerator increase this to typically < 30 π • me • μm.

  6. Solid-State Thermionic Nuclear Power for Megawatt Propulsion, Planetary Surface and Commercial Power Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Thermionic (TI) power conversion is a promising technology first investigated for power conversion in the 1960’s, and of renewed interest due to modern...

  7. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    International Nuclear Information System (INIS)

    Chandra, V.K.; Chandra, B.P.; Tiwari, M.; Baghel, R.N.; Ramrakhiani, M.

    2012-01-01

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron–hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  8. Preliminary study of laser welding for aortic dissection in a porcine model using a diode laser with indocyanine green.

    Science.gov (United States)

    Fujita, Masanori; Morimoto, Yuji; Ohmori, Sayaka; Usami, Noriko; Arai, Tsunenori; Maehara, Tadaaki; Kikuchi, Makoto

    2003-01-01

    The objective of this study was to determine whether a dissected aorta could be welded by a diode laser with a solder using an in vitro porcine aortic dissection model. Porcine aortic strips were dissected into two flaps and the dissected faces were immersed in a solution of indocyanine green. The two flaps were pressed at 0.2 kg/cm2 with contact between the two immersed faces. The pressed flaps were irradiated with a diode laser (810 nm) at intensities of 170-425 W/cm2 for 8 seconds. The welded flaps were studied by light microscopy and the adhesive strengths were measured. The irradiated flaps were successfully welded. The breaking stress, the maximum stress recorded in a stress-strain curve, increased with increase in irradiation intensity up to 396 W/cm2 (2.7 x 10(2) mmHg) and decreased when the intensity reached 425 W/cm2. In the specimen irradiated at 396 W/cm2, the welded faces showed continuous fusion of elastin layers, while some voids were seen between the welded faces in the specimen irradiated at 425 W/cm2. The dissected porcine aortas were successfully welded using a laser with solder. The results suggest that the welded aorta can bear physiological blood pressure. Copyright 2003 Wiley-Liss, Inc.

  9. Schottky diode model for non-parabolic dispersion in narrow-gap semiconductor and few-layer graphene

    Science.gov (United States)

    Ang, Yee Sin; Ang, L. K.; Zubair, M.

    Despite the fact that the energy dispersions are highly non-parabolic in many Schottky interfaces made up of 2D material, experimental results are often interpreted using the conventional Schottky diode equation which, contradictorily, assumes a parabolic energy dispersion. In this work, the Schottky diode equation is derived for narrow-gap semiconductor and few-layer graphene where the energy dispersions are highly non-parabolic. Based on Kane's non-parabolic band model, we obtained a more general Kane-Schottky scaling relation of J (T2 + γkBT3) which connects the contrasting J T2 in the conventional Schottky interface and the J T3 scaling in graphene-based Schottky interface via a non-parabolicity parameter, γ. For N-layer graphene of ABC -stacking and of ABA -stacking, the scaling relation follows J T 2 / N + 1 and J T3 respectively. Intriguingly, the Richardson constant extracted from the experimental data using an incorrect scaling can differ with the actual value by more than two orders of magnitude. Our results highlights the importance of using the correct scaling relation in order to accurately extract important physical properties, such as the Richardson constant and the Schottky barrier's height.

  10. Improvement of mobility edge model by using new density of states with exponential tail for organic diode

    International Nuclear Information System (INIS)

    Muhammad Ammar Khan; Sun Jiu-Xun

    2015-01-01

    The mobility edge (ME) model with single Gaussian density of states (DOS) is simplified based on the recent experimental results about the Einstein relationship. The free holes are treated as being non-degenerate, and the trapped holes are dealt with as being degenerate. This enables the integral for the trapped holes to be easily realized in a program. The J–V curves are obtained through solving drift-diffusion equations. When this model is applied to four organic diodes, an obvious deviation between theoretical curves and experimental data is observed. In order to solve this problem, a new DOS with exponential tail is proposed. The results show that the consistence between J–V curves and experimental data based on a new DOS is far better than that based on the Gaussian DOS. The variation of extracted mobility with temperature can be well described by the Arrhenius relationship. (paper)

  11. Employment of single-diode model to elucidate the variations in photovoltaic parameters under different electrical and thermal conditions.

    Directory of Open Access Journals (Sweden)

    Fahmi F Muhammad

    Full Text Available In this research work, numerical simulations are performed to correlate the photovoltaic parameters with various internal and external factors influencing the performance of solar cells. Single-diode modeling approach is utilized for this purpose and theoretical investigations are compared with the reported experimental evidences for organic and inorganic solar cells at various electrical and thermal conditions. Electrical parameters include parasitic resistances (Rs and Rp and ideality factor (n, while thermal parameters can be defined by the cells temperature (T. A comprehensive analysis concerning broad spectral variations in the short circuit current (Isc, open circuit voltage (Voc, fill factor (FF and efficiency (η is presented and discussed. It was generally concluded that there exists a good agreement between the simulated results and experimental findings. Nevertheless, the controversial consequence of temperature impact on the performance of organic solar cells necessitates the development of a complementary model which is capable of well simulating the temperature impact on these devices performance.

  12. Electro-thermal analysis and optimisation of edge termination of power diode supported by 2-D/3-D numerical modelling and simulation

    International Nuclear Information System (INIS)

    Príbytný, P; Donoval, D; Chvála, A; Marek, J; Molnár, M

    2014-01-01

    Numerical modelling and simulation provide an efficient tool for analysis and optimization of device structure design. In this paper we present the analysis and the geometry optimization of the power module with high power pin diode structure supported by the advanced 2-D/3-D mixed-mode electro-thermal device simulation. The structure under investigation is P + NN + power diode device designed for high reverse voltages and very high forward currents, with a maximum forward surge current up to 2.7 kA.

  13. Application of Gaussian beam ray-equivalent model and back-propagation artificial neural network in laser diode fast axis collimator assembly.

    Science.gov (United States)

    Yu, Hao; Rossi, Giammarco; Braglia, Andrea; Perrone, Guido

    2016-08-10

    The paper presents the development of a tool based on a back-propagation artificial neural network to assist in the accurate positioning of the lenses used to collimate the beam from semiconductor laser diodes along the so-called fast axis. After training using a Gaussian beam ray-equivalent model, the network is capable of indicating the tilt, decenter, and defocus of such lenses from the measured field distribution, so the operator can determine the errors with respect to the actual lens position and optimize the diode assembly procedure. An experimental validation using a typical configuration exploited in multi-emitter diode module assembly and fast axis collimating lenses with different focal lengths and numerical apertures is reported.

  14. Computer modeling characterization, and applications of Gallium Arsenide Gunn diodes in radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    El- Basit, Wafaa Abd; El-Ghanam, Safaa Mohamed; Kamh, Sanaa Abd El-Tawab [Electronics Research Laboratory, Physics Department, Faculty of Women for Arts, Science and Education, Ain-Shams University, Cairo (Egypt); Abdel-Maksood, Ashraf Mosleh; Soliman, Fouad Abd El-Moniem Saad [Nuclear Materials Authority, Cairo (Egypt)

    2016-10-15

    The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or γ fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different γ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

  15. High power diode pumped solid state (DPSS) laser systems active media robust modeling and analysis

    Science.gov (United States)

    Kashef, Tamer M.; Mokhtar, Ayman M.; Ghoniemy, Samy A.

    2018-02-01

    Diode side-pumped solid-state lasers have the potential to yield high quality laser beams with high efficiency and reliability. This paper summarizes the results of simulation of the most predominant active media that are used in high power diode pumped solid-state (DPSS) laser systems. Nd:YAG, Nd:glass, and Nd:YLF rods laser systems were simulated using the special finite element analysis software program LASCAD. A performance trade off analysis for Nd:YAG, Nd:glass, and Nd:YLF rods was performed in order to predict the system optimized parameters and to investigate thermally induced thermal fracture that may occur due to heat load and mechanical stress. The simulation results showed that at the optimized values Nd:YAG rod achieved the highest output power of 175W with 43% efficiency and heat load of 1.873W/mm3. A negligible changes in laser output power, heat load, stress, and temperature distributions were observed when the Nd:YAG rod length was increased from 72 to 80mm. Simulation of Nd:glass at different rod diameters at the same pumping conditions showed better results for mechanical stress and thermal load than that of Nd:YAG and Nd:YLF which makes it very suitable for high power laser applications especially for large rod diameters. For large rod diameters Nd:YLF is mechanically weaker and softer crystal compared to Nd:YAG and Nd:glass due to its poor thermomechanical properties which limits its usage to only low to medium power systems.

  16. Modeling of transient electroluminescence overshoot in bilayer organic light-emitting diodes using rate equations

    Energy Technology Data Exchange (ETDEWEB)

    Chandra, V.K. [Department of Electrical and Electronics Engineering, Chhatrapati Shivaji Institute of Technology, Shivaji Nagar, Kolihapuri, Durg 491001 (C.G.) (India); Chandra, B.P., E-mail: bpchandra4@yahoo.co.in [Department of Applied Physics, Ashoka Institute of Technology and Management, Rajnandgaon 491441 (C.G.) (India); Tiwari, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India); Baghel, R.N. [School of Studies in Physics and Astrophysics, Pt. Ravishankar Shukla University, Raipur 492010 (C.G.) (India); Ramrakhiani, M. [Department of Postgraduate Studies and Research in Physics and Electronics, Rani Durgavati University, Jabalpur 482001 (M.P.) (India)

    2012-06-15

    When a voltage pulse is applied under forward biased condition to a spin-coated bilayer organic light-emitting diode (OLED), then initially the electroluminescence (EL) intensity appearing after a delay time, increases with time and later on it attains a saturation value. At the end of the voltage pulse, the EL intensity decreases with time, attains a minimum intensity and then it again increases with time, attains a peak value and later on it decreases with time. For the OLEDs, in which the lifetime of trapped carriers is less than the decay time of the EL occurring prior to the onset of overshoot, the EL overshoot begins just after the end of voltage pulse. The overshoot in spin-coated bilayer OLEDs is caused by the presence of an interfacial layer of finite thickness between hole and electron transporting layers in which both transport molecules coexist, whereby the interfacial energy barrier impedes both hole and electron passage. When a voltage pulse is applied to a bilayer OLED, positive and negative space charges are established at the opposite faces of the interfacial layer. Subsequently, the charge recombination occurs with the incoming flux of injected carriers of opposite polarity. When the voltage is turned off, the interfacial charges recombine under the action of their mutual electric field. Thus, after switching off the external voltage the electrons stored in the interface next to the anode cell compartment experience an electric field directed from cathode to anode, and therefore, the electrons move towards the cathode, that is, towards the positive space charge, whereby electron-hole recombination gives rise to luminescence. The EL prior to onset of overshoot is caused by the movement of electrons in the electron transporting states, however, the EL in the overshoot region is caused by the movement of detrapped electrons. On the basis of the rate equations for the detrapping and recombination of charge carriers accumulated at the interface

  17. Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chawanda, Albert, E-mail: albert.chawanda@up.ac.za [Midlands State University, Bag 9055 Gweru (Zimbabwe); University of Pretoria, 0002 Pretoria (South Africa); Mtangi, Wilbert; Auret, Francois D; Nel, Jacqueline [University of Pretoria, 0002 Pretoria (South Africa); Nyamhere, Cloud [Nelson Mandela Metropolitan University, Port Elizabeth (South Africa); Diale, Mmantsae [University of Pretoria, 0002 Pretoria (South Africa)

    2012-05-15

    The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I-V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) ({Phi}{sub B}) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height {Phi}{sub B} vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of {Phi}{sub B}=0.615 eV and standard deviation {sigma}{sub s0}=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm{sup -2} K{sup -2} and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm{sup -2} K{sup -2}. This may be due to greater inhomogeneities at the interface.

  18. Measuring current emission and work functions of large thermionic cathodes

    International Nuclear Information System (INIS)

    Fortgang, C.M.

    2001-01-01

    As one component of the nations Stockpile Stewardship program, Los Alamos National Laboratory is constructing a 20 MeV, 2 kA (with a 4 kA upgrade capability), 3ps induction linac for doing x-ray radiography of explosive devices. The linac is one leg of a facility called the Dual-Axis Radiography Hydrodynamic Test Facility (DARHT). The electron gun is designed to operate at 3.2 MV. The gun is a Pierce type design and uses a 6.5' cathode for 2 kA operation and an 8' cathode for 4 kA operation. We have constructed a small facility called the Cathode Test Stand (CTS) to investigate engineering and physics issues regarding large thermionic dispenser-cathodes. In particular, we have looked at the issues of temperature uniformity on the cathode surface and cathode quality as measured by its work function. We have done thermal imaging of both 8' and 6.5' cathodes. Here we report on measurements of the cathode work function, both the average value and how it vanes across the face of the cathode.

  19. Liquid diode

    International Nuclear Information System (INIS)

    1976-01-01

    The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

  20. Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

    Directory of Open Access Journals (Sweden)

    Zebiri Mohamed

    2018-01-01

    Full Text Available In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V and power voltage (P-V of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

  1. Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

    Science.gov (United States)

    Zebiri, Mohamed; Mediouni, Mohamed; Idadoub, Hicham

    2018-05-01

    In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V) and power voltage (P-V) of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

  2. Modeling of light-emitting diode wavefronts for the optimization of transmission holograms.

    Science.gov (United States)

    Karthaus, Daniela; Giehl, Markus; Sandfuchs, Oliver; Sinzinger, Stefan

    2017-06-20

    The objective of applying transmission holograms in automotive headlamp systems requires the adaptation of holograms to divergent and polychromatic light sources like light-emitting diodes (LEDs). In this paper, four different options to describe the scalar light waves emitted by a typical automotive LED are regarded. This includes a new approach to determine the LED's wavefront from interferometric measurements. Computer-generated holograms are designed considering the different LED approximations and recorded into a photopolymer. The holograms are reconstructed with the LED and the resulting images are analyzed to evaluate the quality of the wave descriptions. In this paper, we show that our presented new approach leads to better results in comparison to other wave descriptions. The enhancement is evaluated by the correlation between reconstructed and ideal images. In contrast to the next best approximation, a spherical wave, the correlation coefficient increased by 0.18% at 532 nm, 1.69% at 590 nm, and 0.75% at 620 nm.

  3. Parameters estimation of the single and double diode photovoltaic models using a Gauss–Seidel algorithm and analytical method: A comparative study

    International Nuclear Information System (INIS)

    Et-torabi, K.; Nassar-eddine, I.; Obbadi, A.; Errami, Y.; Rmaily, R.; Sahnoun, S.; El fajri, A.; Agunaou, M.

    2017-01-01

    Highlights: • Comparative study of two methods: a Gauss Seidel method and an analytical method. • Five models are implemented to estimate the five parameters for single diode. • Two models are used to estimate the seven parameters for double diode. • The parameters are estimated under changing environmental conditions. • To choose method/model combination more adequate for each PV module technology. - Abstract: In the photovoltaic (PV) panels modeling field, this paper presents a comparative study of two parameter estimation methods: the iterative method called Gauss Seidel, applied on the single diode model, and the analytical method used on the double diode model. These parameter estimation methods are based on the manufacturer's datasheets. They are also tested on three PV modules of different technologies: multicrystalline (kyocera KC200GT), monocrystalline (Shell SQ80), and thin film (Shell ST40). For the iterative method, five existing mathematical models classified from 1 to 5 are used to estimate the parameters of these PV modules under varying environmental conditions. Only two models of them are used for the analytical method. Each model is based on the combination of the photocurrent and the reverse saturation current’s expressions in terms of temperature and irradiance. In addition, the results of the models’ simulation are compared with the experimental data obtained from the PV modules’ datasheets, in order to evaluate the accuracy of the models. The simulation shows that the I-V characteristics obtained are matching to the experimental data. In order to validate the reliability of the two methods, both the Absolute Error (AE) and the Root Mean Square Error (RMSE) were calculated. The results suggest that the analytical method can be very useful for monocrystalline and multicrystalline modules, but for the thin film module, the iterative method is the most suitable.

  4. Parameters extraction of the three diode model for the multi-crystalline solar cell/module using Moth-Flame Optimization Algorithm

    International Nuclear Information System (INIS)

    Allam, Dalia; Yousri, D.A.; Eteiba, M.B.

    2016-01-01

    Highlights: • More detailed models are proposed to emulate the multi-crystalline solar cell/module. • Moth-Flame Optimizer (MFO) is proposed for the parameter extraction process. • The performance of MFO technique is compared with the recent optimization algorithms. • MFO algorithm converges to the optimal solution more rapidly and more accurately. • MFO algorithm accomplished with three diode model achieves the most accurate model. - Abstract: As a result of the wide prevalence of using the multi-crystalline silicon solar cells, an accurate mathematical model for these cells has become an important issue. Therefore, a three diode model is proposed as a more precise model to meet the relatively complicated physical behavior of the multi-crystalline silicon solar cells. The performance of this model is compared to the performance of both the double diode and the modified double diode models of the same cell/module. Therefore, there is a persistent need to keep searching for a more accurate optimization algorithm to estimate the more complicated models’ parameters. Hence, a proper optimization algorithm which is called Moth-Flame Optimizer (MFO), is proposed as a new optimization algorithm for the parameter extraction process of the three tested models based on data measured at laboratory and other data reported at previous literature. To verify the performance of the suggested technique, its results are compared with the results of the most recent and powerful techniques in the literature such as Hybrid Evolutionary (DEIM) and Flower Pollination (FPA) algorithms. Furthermore, evaluation analysis is performed for the three algorithms of the selected models at different environmental conditions. The results show that, MFO algorithm achieves the least Root Mean Square Error (RMSE), Mean Bias Error (MBE), Absolute Error at the Maximum Power Point (AEMPP) and best Coefficient of Determination. In addition, MFO is reaching to the optimal solution with the

  5. Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

    International Nuclear Information System (INIS)

    Yun, J; Shim, J-I; Shin, D-S

    2013-01-01

    We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

  6. Simulations of charge transport in organic light emitting diodes

    International Nuclear Information System (INIS)

    Martin, Simon James

    2002-01-01

    In this thesis, two approaches to the modelling of charge transport in organic light emitting diodes (OLEDs) are presented. The first is a drift-diffusion model, normally used when considering conventional crystalline inorganic semiconductors (e.g. Si or lll-V's) which have well defined energy bands. In this model, electron and hole transport is described using the current continuity equations and the drift-diffusion current equations, and coupled to Poisson's equation. These equations are solved with the appropriate boundary conditions, which for OLEDs are Schottky contacts; carriers are injected by thermionic emission and tunnelling. The disordered nature of the organic semiconductors is accounted for by the inclusion of field-dependent carrier mobilities and Langevin optical recombination. The second approach treats the transport of carriers in disordered organic semi-conductors as a hopping process between spatially and energetically disordered sites. This method has been used previously to account for the observed temperature and electric field dependence of carrier mobilities in disordered organic semiconductors. A hopping transport model has been developed which accounts explicitly for the structure in highly ordered films of rigid rod liquid-crystalline conjugated polymers. Chapter 2 discusses the formation of metal-semiconductor contacts, and current injection processes in OLEDs. If the barrier to carrier injection at a metal-semiconductor contact is small, or the contact is Ohmic, then the current may be space charge limited; this second limiting regime of current flow for OLEDs is also described. The remainder of Chapter 2 describes the drift-diffusion model used in this work in some detail. Chapter 3 contains results obtained from modelling the J-V characteristics of single-layer OLEDs, which are compared to experimental data in order to validate the drift-diffusion model. Chapter 4 contains results of simulating bi-layer OLEDs; rather than examining J

  7. Supersonic Mass Flux Measurements via Tunable Diode Laser Absorption and Non-Uniform Flow Modeling

    Science.gov (United States)

    Chang, Leyen S.; Strand, Christopher L.; Jeffries, Jay B.; Hanson, Ronald K.; Diskin, Glenn S.; Gaffney, Richard L.; Capriotti, Diego P.

    2011-01-01

    Measurements of mass flux are obtained in a vitiated supersonic ground test facility using a sensor based on line-of-sight (LOS) diode laser absorption of water vapor. Mass flux is determined from the product of measured velocity and density. The relative Doppler shift of an absorption transition for beams directed upstream and downstream in the flow is used to measure velocity. Temperature is determined from the ratio of absorption signals of two transitions (lambda(sub 1)=1349 nm and lambda(sub 2)=1341.5 nm) and is coupled with a facility pressure measurement to obtain density. The sensor exploits wavelength-modulation spectroscopy with second-harmonic detection (WMS-2f) for large signal-to-noise ratios and normalization with the 1f signal for rejection of non-absorption related transmission fluctuations. The sensor line-of-sight is translated both vertically and horizontally across the test section for spatially-resolved measurements. Time-resolved measurements of mass flux are used to assess the stability of flow conditions produced by the facility. Measurements of mass flux are within 1.5% of the value obtained using a facility predictive code. The distortion of the WMS lineshape caused by boundary layers along the laser line-of-sight is examined and the subsequent effect on the measured velocity is discussed. A method for correcting measured velocities for flow non-uniformities is introduced and application of this correction brings measured velocities within 4 m/s of the predicted value in a 1630 m/s flow.

  8. Performance evaluation and parametric optimum design of a vacuum thermionic solar cell

    International Nuclear Information System (INIS)

    Liao, Tianjun; Chen, Xiaohang; Chen, Jincan; Lin, Bihong

    2016-01-01

    A model of the vacuum thermionic solar cell (VTSC) consisting of a solar concentrator, an emitter, and a collector is proposed, in which the various heat losses including the far- and near-field thermal radiation are taken into account. Formula for the overall efficiency of the system is analytically derived. For given values of the ratio of the front surface area of the absorber to that of the emitter and the vacuum gap between the emitter and the collector, the operating temperatures of the emitter and collector are determined by solving the energy balance equations. The maximum efficiency of the VTSC are calculated for given values of the work functions of the emitter and collector materials, and some key parameters such as the net current density of the VTSC, operating temperatures of the emitter and collector, vacuum gap between the emitter and the collector, and area ratio of the absorber to the emitter are optimally determined. Furthermore, the effects of the work functions and the concentration ratio of the solar irradiation on the performance of the VTSC are discussed and several parametric selection criteria are obtained

  9. Lambert W-function based exact representation for double diode model of solar cells: Comparison on fitness and parameter extraction

    International Nuclear Information System (INIS)

    Gao, Xiankun; Cui, Yan; Hu, Jianjun; Xu, Guangyin; Yu, Yongchang

    2016-01-01

    Highlights: • Lambert W-function based exact representation (LBER) is presented for double diode model (DDM). • Fitness difference between LBER and DDM is verified by reported parameter values. • The proposed LBER can better represent the I–V and P–V characteristics of solar cells. • Parameter extraction difference between LBER and DDM is validated by two algorithms. • The parameter values extracted from LBER are more accurate than those from DDM. - Abstract: Accurate modeling and parameter extraction of solar cells play an important role in the simulation and optimization of PV systems. This paper presents a Lambert W-function based exact representation (LBER) for traditional double diode model (DDM) of solar cells, and then compares their fitness and parameter extraction performance. Unlike existing works, the proposed LBER is rigorously derived from DDM, and in LBER the coefficients of Lambert W-function are not extra parameters to be extracted or arbitrary scalars but the vectors of terminal voltage and current of solar cells. The fitness difference between LBER and DDM is objectively validated by the reported parameter values and experimental I–V data of a solar cell and four solar modules from different technologies. The comparison results indicate that under the same parameter values, the proposed LBER can better represent the I–V and P–V characteristics of solar cells and provide a closer representation to actual maximum power points of all module types. Two different algorithms are used to compare the parameter extraction performance of LBER and DDM. One is our restart-based bound constrained Nelder-Mead (rbcNM) algorithm implemented in Matlab, and the other is the reported R_c_r-IJADE algorithm executed in Visual Studio. The comparison results reveal that, the parameter values extracted from LBER using two algorithms are always more accurate and robust than those from DDM despite more time consuming. As an improved version of DDM, the

  10. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  11. Continuous Water Vapor Mass Flux and Temperature Measurements in a Model Scramjet Combustor Using a Diode Laser Sensor

    National Research Council Canada - National Science Library

    Upschulte, B. L; Miller, M. F; Allen, M. G; Jackson, K; Gruber, M; Mathur, T

    1998-01-01

    A sensor for simultaneous measurements of water vapor density, temperature and velocity has been developed based on absorption techniques using room temperature diode lasers (InGaAsP) operating at 1.31 micrometers...

  12. On thermionic emission from plasma-facing components in tokamak-relevant conditions.

    Czech Academy of Sciences Publication Activity Database

    Komm, Michael; Ratynskaia, S.; Tolias, P.; Cavalier, Jordan; Dejarnac, Renaud; Gunn, J. P.; Podolník, Aleš

    2017-01-01

    Roč. 59, č. 9 (2017), č. článku 094002. ISSN 0741-3335 R&D Projects: GA ČR(CZ) GA16-14228S; GA MŠk(CZ) 8D15001 EU Projects: European Commission(XE) 633053 - EUROfusion Institutional support: RVO:61389021 Keywords : thermionic * PIC * tungsten * tokamak * thermionic emission * plasma facing components * particle-in-cell Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics) Impact factor: 2.392, year: 2016 http://iopscience.iop.org/article/10.1088/1361-6587/aa78c4/pdf

  13. An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

    Science.gov (United States)

    Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

    2016-04-01

    Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

  14. The use of the computer code PE2D in the electrostatic modelling of an electron beam generator vacuum diode interface

    International Nuclear Information System (INIS)

    Biddlecombe, C.S.; Edwards, C.B.; Shaw, M.J.

    1981-10-01

    The computer code PE2D has been used to optimise the design of a compact, 500kV, low inductance vacuum diode interface assembly for SPRITE, a sophisticated electron beam pumped exciplex laser system under construction at RAL. Electrostatic modelling of various dielectric interfaces has been achieved in cylindrical symmetry under conditions not amenable to more traditional methods of electrostatic field plotting. (author)

  15. Robust Sub-harmonic Mixer at 340 GHz Using Intrinsic Resonances of Hammer-Head Filter and Improved Diode Model

    Science.gov (United States)

    Wang, Cheng; He, Yue; Lu, Bin; Jiang, Jun; Miao, Li; Deng, Xian-Jin; Xiong, Yong-zhong; Zhang, Jian

    2017-11-01

    This paper presents a sub-harmonic mixer at 340 GHz based on anti-parallel Schottky diodes (SBDs). Intrinsic resonances in low-pass hammer-head filter have been adopted to enhance the isolation for different harmonic components, while greatly minimizing the transmission loss. The application of new DC grounding structure, impedance matching structure, and suspended micro-strip mitigates the negative influences of fabrication errors from metal cavity, quartz substrate, and micro-assembly. An improved lumped element equivalent circuit model of SBDs guarantees the accuracy of simulation, which takes current-voltage (I/V) behavior, capacitance-voltage (C/V) behavior, carrier velocity saturation, DC series resistor, plasma resonance, skin effect, and four kinds of noise generation mechanisms into consideration thoroughly. The measurement indicates that with local oscillating signal of 2 mW, the lowest double sideband conversion loss is 5.5 dB at 339 GHz; the corresponding DSB noise temperature is 757 K. The 3 dB bandwidth of conversion loss is 50 GHz from 317 to 367 GHz.

  16. A novel theoretical model for broadband blue InGaN/GaN superluminescent light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Moslehi Milani, N. [Photonics-Electronics Group, Aras International Campus, University of Tabriz, Tabriz 51666-14766 (Iran, Islamic Republic of); Mohadesi, V. [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163 (Iran, Islamic Republic of); Asgari, A., E-mail: asgari@tabrizu.ac.ir [Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz 51665-163 (Iran, Islamic Republic of); School of Electrical, Electronic and Computer Engineering, The University of Western Australia, Crawley, WA 6009 (Australia)

    2015-02-07

    A broadband superluminescent light emitting diode with In{sub 0.2}Ga{sub 0.8}N/GaN multiple quantum wells (MQWs) active region is investigated. The investigation is based on a theoretical model which includes the calculation of electronic states of the structure, rate equations, and the spectral radiation power. Two rate equations corresponding to MQW active region and separate confinement heterostructures layer are solved self-consistently with no-k selection wavelength dependent gain and quasi-Fermi level functions. Our results show that the superluminescence started in a current of ∼120 mA (∼7.5 kA/Cm{sup 2}) at 300 K. The range of peak emission wavelengths for different currents is 423–426 nm and the emission bandwidth is ∼5 nm in the superluminescence regime. A maximum light output power of 7.59 mW is obtained at 600 mA and the peak modal gain as a function of current indicates logarithmic behavior. Also, the comparison of our calculated results with published experimental data is shown to be in good agreement.

  17. A Rat Model of Thrombosis in Common Carotid Artery Induced by Implantable Wireless Light-Emitting Diode Device

    Directory of Open Access Journals (Sweden)

    Jih-Chao Yeh

    2014-01-01

    Full Text Available This work has developed a novel approach to form common carotid artery (CCA thrombus in rats with a wireless implantable light-emitting diode (LED device. The device mainly consists of an external controller and an internal LED assembly. The controller was responsible for wirelessly transmitting electrical power. The internal LED assembly served as an implant to receive the power and irradiate light on CCA. The thrombus formation was identified with animal sonography, 7T magnetic resonance imaging, and histopathologic examination. The present study showed that a LED assembly implanted on the outer surface of CCA could induce acute occlusion with single irradiation with 6 mW/cm2 LED for 4 h. If intermittent irradiation with 4.3–4.5 mW/cm2 LED for 2 h was shut off for 30 min, then irradiation for another 2 h was applied; the thrombus was observed to grow gradually and was totally occluded at 7 days. Compared with the contralateral CCA without LED irradiation, the arterial endothelium in the LED-irradiated artery was discontinued. Our study has shown that, by adjusting the duration of irradiation and the power intensity of LED, it is possible to produce acute occlusion and progressive thrombosis, which can be used as an animal model for antithrombotic drug development.

  18. Charge injection and transport properties of an organic light-emitting diode

    Directory of Open Access Journals (Sweden)

    Peter Juhasz

    2016-01-01

    Full Text Available The charge behavior of organic light emitting diode (OLED is investigated by steady-state current–voltage technique and impedance spectroscopy at various temperatures to obtain activation energies of charge injection and transport processes. Good agreement of activation energies obtained by steady-state and frequency-domain was used to analyze their contributions to the charge injection and transport. We concluded that charge is injected into the OLED device mostly through the interfacial states at low voltage region, whereas the thermionic injection dominates in the high voltage region. This comparison of experimental techniques demonstrates their capabilities of identification of major bottleneck of charge injection and transport.

  19. Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes

    Directory of Open Access Journals (Sweden)

    H. MAZARI

    2014-05-01

    Full Text Available The current-voltage (I-V characteristics of Pt/(n.u.d-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

  20. The Effect of Diode Laser on Planktonic Enterococcus faecalis in Infected Root Canals in an Ex Vivo Model.

    Science.gov (United States)

    Cretella, Gilda; Lajolo, Carlo; Castagnola, Raffaella; Somma, Francesco; Inchingolo, MariaTeresa; Marigo, Luca

    2017-04-01

    This study examined the bactericidal effect of diode laser irradiation against intracanal Enterococcus faecalis. m total of 128 extracted single-rooted and single-canal teeth were treated with ProTaper instruments (Dentsply Maillefer, Ballaigues, Switzerland). A total of 120 root canals were inoculated with E. faecalis for 21 days, and the samples were randomly divided into five groups: Group 1 (n = 24) samples were irrigated with only saline solution (positive controls); Group 2 (n = 24) was treated with only 5.25% sodium hypochlorite; Group 3 (n = 24) was irrigated with saline solutions activated by diode laser; Group 4 (n = 24) was treated with 5.25% sodium hypochlorite activated by diode laser; and Group 5 (n = 24) was irrigated with saline solution with methylene blue dye activated by the diode laser Fox (Sweden & Martina, Padova, Italy); additionally, eight teeth were not contaminated and their canals were irrigated with saline solution and used as a negative control. The Uro-Quick system was used to determine the microbial residual charge. The data were analyzed using Pearson's chi-square test (p  0.001). Evidence indicates that the diode laser was not more effective than sodium hypochlorite in reducing free bacteria.

  1. Communication: IR spectroscopy of neutral transition metal clusters through thermionic emission

    NARCIS (Netherlands)

    Lapoutre, V. J. F.; Haertelt, M.; Meijer, G.; Fielicke, A.; Bakker, J. M.

    2013-01-01

    The resonant multiple photon excitation of neutral niobium clusters using tunable infrared (IR) radiation leads to thermionic emission. By measuring the mass-resolved ionization yield as a function of IR wavenumber species selective IR spectra are obtained for Nb-n (n = 5-20) over the 200-350 cm(-1)

  2. Cesium-plasma-conductivity enhancement in the advanced thermionic energy converter. Final report

    International Nuclear Information System (INIS)

    Manikopoulos, C.N.

    Two methods of plasma conductivity enhancement in a cesium vapor thermionic energy converter have been studied. The first involved resonance photoabsorption of several cesium lines and the second utilized cesium plasma sustenance by application of microwave power. An extensive study of ionization processes in a cesium discharge in the presence of resonance ionization was made. Calculations were made of expected percentage excitation levels for several cesium resonance transitions for different values of neutral density and temperature as well as incident radiation power levels. The results of some of these computations were tabulated. Several ionization schemes were considered. A number of cesium transitions were investigated in the range of 799 to 870 nanometers for four different cesium reservoir temperatures, 467, 511, 550 and 591 K. The related absorption coefficients of the radiation lines in the plasma were deduced and tabulated. The resulting plasma conductivity increase was recorded and the associated ionization enhancement was deduced. A microwave cavity was built where the emitter and collector of a simple thermionic converter made up two of the cavity walls and resonant microwave power was externally applied. The I-V characteristics of the thermionic converter were studied under several microwave power levels in the range of 0 to 2 watts. Significant shifts to higher currents were observed as the microwave power levels were raised. In conclusion, both methods show promise as auxiliary ionization mechanisms for the thermionic energy converter, especially at low emitter temperatures

  3. A thermionic energy converter with a molybdenum-alumina cermet emitter

    NARCIS (Netherlands)

    Gubbels, G.H.M.; Wolff, L.R.; Metselaar, R.

    1990-01-01

    A study is made of the properties of cermets as electrode materials for thermionic energy converters. For thermodynamic reasons it is expected that all cermets composed of pure Mo and refractory oxides have the same bare work function. From data on the work function of Mo in an oxygen atmosphere

  4. Numerical simulations of the thermionic electron gun for electron-beam welding and micromachining

    Czech Academy of Sciences Publication Activity Database

    Jánský, Pavel; Zlámal, J.; Lencová, Bohumila; Zobač, Martin; Vlček, Ivan; Radlička, Tomáš

    2009-01-01

    Roč. 84, č. 2 (2009), s. 357-362 ISSN 0042-207X R&D Projects: GA AV ČR IAA100650805 Institutional research plan: CEZ:AV0Z20650511 Keywords : Numerical simulation * Thermionic emission * Electron gun Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.975, year: 2009

  5. Measures to alleviate the back bombardment effect of thermionic rf electron gun

    International Nuclear Information System (INIS)

    Huang, Y.; Xie, J.

    1991-01-01

    Thermionic rf electron gun finds application as a high brightness electron source for rf linacs. However, cathode heating from back-bombardment effect causes a ramp in the macro-pulse beam current and limit the usable pulse width. Three methods: ring cathode, magnetic deflection and laser assisted heating are studied in theory and in experiment. The results of these studies are reported

  6. Schottky barrier diode based on β-Ga2O3 (100) single crystal substrate and its temperature-dependent electrical characteristics

    Science.gov (United States)

    He, Qiming; Mu, Wenxiang; Dong, Hang; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tang, Minghua; Tao, Xutang; Liu, Ming

    2017-02-01

    The Pt/β-Ga2O3 Schottky barrier diode and its temperature-dependent current-voltage characteristics were investigated for power device application. The edge-defined film-fed growth (EFG) technique was utilized to grow the (100)-oriented β-Ga2O3 single crystal substrate that shows good crystal quality characterized by X-ray diffraction and high resolution transmission electron microscope. Ohmic and Schottky electrodes were fabricated by depositing Ti and Pt metals on the two surfaces, respectively. Through the current-voltage (I-V) measurement under different temperature and the thermionic emission modeling, the fabricated Pt/β-Ga2O3 Schottky diode was found to show good performances at room temperature, including rectification ratio of 1010, ideality factor (n) of 1.1, Schottky barrier height (ΦB) of 1.39 eV, threshold voltage (Vbi) of 1.07 V, ON-resistance (RON) of 12.5 mΩ.cm2, forward current density at 2 V (J@2V) of 56 A/cm2, and saturation current density (J0) of 2 × 10-16 A/cm2. The effective donor concentration Nd - Na was calculated to be about 2.3 × 1014 cm3. Good temperature dependent performance was also found in the device. The Schottky barrier height was estimated to be about 1.3 eV-1.39 eV at temperatures ranging from room temperature to 150 °C. With increasing temperature, parameters such as RON and J@2V become better, proving that the diode can work well at high temperature. The EFG grown β-Ga2O3 single crystal is a promising material to be used in the power devices.

  7. A circuital model of switching behaviour of 4H-SiC p+-n-n+ diodes valid at any current and temperature

    International Nuclear Information System (INIS)

    Bellone, S; Benedetto, L Di; Licciardo, G D; Corte, F Della

    2014-01-01

    A circuital model of 4H-SiC p + -n-n + diodes is presented, which is able to describe the switching behaviour of the devices in a wide range of current, voltage and temperature, at an arbitrary instant, with comparable accuracy of numerical simulations. The model has been analytically derived under generic conditions and is capable to calculate also the dynamic spatial distribution of minority carriers in the epitaxial layer. The accuracy of the model is shown by comparison with numerical simulations and experimental measurements.

  8. Monte Carlo simulation of THz radiation from GaAs p-i-n diodes under high electric fields using an extended valley model

    International Nuclear Information System (INIS)

    Dinh Nhu Thao

    2008-01-01

    We have applied a self-consistent ensemble Monte Carlo simulation procedure using an extended valley model to consider the THz radiation from GaAs p-i-n diodes under high electric fields. The present calculation has shown an important improvement of the numerical results when using this model instead of the usual valley model. It has been shown the importance of the full band-structure in the simulation of processes in semiconductors, especially under the influence of high electric fields. (author)

  9. Features of current-voltage characteristic of nonequilibrium trench MOS barrier Schottky diode

    Science.gov (United States)

    Mamedov, R. K.; Aslanova, A. R.

    2018-06-01

    The trench MOS barrier Schottky diodes (TMBS diode) under the influence of the voltage drop of the additional electric field (AEF) appearing in the near-contact region of the semiconductor are in a nonequilibrium state and their closed external circuit flows currents in the absence of an external voltage. When an external voltage is applied to the TMBS diode, the current transmission is described by the thermionic emission theory with a specific feature. Both forward and reverse I-V characteristics of the TMBS diode consist of two parts. In the initial first part of the forward I-V characteristic there are no forward currents, but reverse saturation currents flow, in its subsequent second part the currents increase exponentially with the voltage. In the initial first part of the reverse I-V characteristic, the currents increase in an abrupt way and in the subsequent second part the saturation currents flow under the action of the image force. The mathematical expressions for forward and reverse I-V characteristic of the TMBS diode and also narrow or nanostructure Schottky diode are proposed, which are in good agreement with the results of experimental and calculated I-V characteristics.

  10. Experimental observations on long pulse intense ion diode operation

    International Nuclear Information System (INIS)

    Prono, D.S.; Clark, R.; Prestwich, K.

    1976-01-01

    An experiment in which a long pulse electron beam diode is converted to a reflex ion diode is reported. The results further substantiate the model of reflex ion diode behavior as well as extend the duration of ion mode operation to greater than 500 nsec

  11. Mathematical modeling of InGaAsP/InP diode laser

    International Nuclear Information System (INIS)

    Soukieh, M.; Hammadi, M.; Abdul Ghani, B.

    2009-01-01

    A mathematical model describing the dynamic emission of InGaAsP/InP semiconductor laser has been developed. This model considers the differential gain, gain at free running condition, spontaneous, bimolecular recombination, Auger and Shockley-Hall-Read (SHR) recombination processes and variation of the internal cavity losses. The model allows investigating the impact of the input laser parameters (injection current, internal cavity losses, Auger and SHR recombination coefficients and spontaneous coupling factor) on the output semiconductor double heterostructure laser pulse characteristics. The numerical calculations show that, the output photon density, pulse width, delay time and the pulse duration are affected by variation the values of the injected current, Auger recombination coefficient, spontaneous coupling factors and by the internal cavity losses. The temporal behavior of the internal cavity losses is also estimated. The calculated results are in very good agreement with the experimental results reported in the literature. (author)

  12. Semi-empirical modelization of charge funneling in a NP diode

    International Nuclear Information System (INIS)

    Musseau, O.

    1991-01-01

    Heavy ion interaction with a semiconductor generates a high density of electrons and holes pairs along the trajectory and in a space charge zone the collected charge is considerably increased. The chronology of this charge funneling is described in a semi-empirical model. From initial conditions characterizing the incident ion and the studied structure, it is possible to evaluate directly the transient current, the collected charge and the length of funneling with a good agreement. The model can be extrapolated to more complex structures

  13. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  14. 2D dark-count-rate modeling of PureB single-photon avalanche diodes in a TCAD environment

    Science.gov (United States)

    Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-02-01

    PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow p+ -anode has high perimeter curvature that enhances the electric field. In SPADs, noise is quantified by the dark count rate (DCR) that is a measure for the number of false counts triggered by unwanted processes in the non-illuminated device. Just like for desired events, the probability a dark count increases with increasing electric field and the perimeter conditions are critical. In this work, the DCR was studied by two 2D methods of analysis: the "quasi-2D" (Q-2D) method where vertical 1D cross-sections were assumed for calculating the electron/hole avalanche-probabilities, and the "ionization-integral 2D" (II-2D) method where crosssections were placed where the maximum ionization-integrals were calculated. The Q-2D method gave satisfactory results in structures where the peripheral regions had a small contribution to the DCR, such as in devices with conventional deepjunction guard rings (GRs). Otherwise, the II-2D method proved to be much more precise. The results show that the DCR simulation methods are useful for optimizing the compromise between fill-factor and p-/n-doping profile design in SPAD devices. For the experimentally investigated PureB SPADs, excellent agreement of the measured and simulated DCR was achieved. This shows that although an implicit GR is attractively compact, the very shallow pn-junction gives a risk of having such a low breakdown voltage at the perimeter that the DCR of the device may be negatively impacted.

  15. Modeling of the gain distribution for diode pumping of a solid-state laser rod with nonimaging optics.

    Science.gov (United States)

    Koshel, R J; Walmsley, I A

    1993-03-20

    We investigate the absorption distribution in a cylindrical gain medium that is pumped by a source of distributed laser diodes by means of a pump cavity developed from the edge-ray principle of nonimaging optics. The performance of this pumping arrangement is studied by using a nonsequential, numerical, three-dimensional ray-tracing scheme. A figure of merit is defined for the pump cavities that takes into account the coupling efficiency and uniformity of the absorption distribution. It is found that the nonimaging pump cavity maintains a high coupling efficiency with extended two-dimensional diode arrays and obtains a fairly uniform absorption distribution. The nonimaging cavity is compared with two other designs: a close-coupled side-pumped cavity and an imaging design in the form of a elliptical cavity. The nonimaging cavity has a better figure of merit per diode than these two designs. It also permits the use of an extended, sparse, two-dimensional diode array, which reduces thermal loading of the source and eliminates all cavity optics other than the main reflector.

  16. Global Model for Asymmetric, Diode-Type Dual Frequency Capacitive Discharge

    Science.gov (United States)

    Kim, Jisoo; Lieberman, M. A.; Lichtenberg, A. J.

    2003-10-01

    Dual frequency capacitive reactors can have desirable properties for dielectric etch: low cost, robust uniformity over large areas, and control of dissociation. In the ideal case, the high frequency power controls the plasma density (ion flux) and the low frequency voltage controls the ion bombarding energy. Typical operating conditions are: discharge radius 15-30 cm, length 1-3 cm, pressure 30-200 mTorr, high frequency 27.1-160 MHz, low frequency 2-13.6 MHz, and powers of 500-3000 W for both high and low frequencies. The decoupling of the high and low frequencies is an important feature of dual frequency capacitive discharges. In this work, we describe a global (volume-averaged) model having different top and bottom plate areas that incorporates particle balance, and ohmic and stochastic heating for high and low frequencies. The model is used to obtain the decoupling of high and low frequencies and to investigate limitations to ideal decoupling. Support provided by Lam Research, NSF Grant ECS-0139956, California industries, and UC-SMART Contract SM99-10051.

  17. Poster - 16: Time-resolved diode dosimetry for in vivo proton therapy range verification: calibration through numerical modeling

    Energy Technology Data Exchange (ETDEWEB)

    Toltz, Allison; Hoesl, Michaela; Schuemann, Jan; Seuntjens, Jan; Lu, Hsiao-Ming; Paganetti, Harald [McGill University, Harvard University, Massachusetts General Hospital, McGill University, Massachusetts General Hospital, Massachusetts General Hospital (United States)

    2016-08-15

    Purpose: A method to refine the implementation of an in vivo, adaptive proton therapy range verification methodology was investigated. Simulation experiments and in-phantom measurements were compared to validate the calibration procedure of a time-resolved diode dosimetry technique. Methods: A silicon diode array system has been developed and experimentally tested in phantom for passively scattered proton beam range verification by correlating properties of the detector signal to the water equivalent path length (WEPL). The implementation of this system requires a set of calibration measurements to establish a beam-specific diode response to WEPL fit for the selected ‘scout’ beam in a solid water phantom. This process is both tedious, as it necessitates a separate set of measurements for every ‘scout’ beam that may be appropriate to the clinical case, as well as inconvenient due to limited access to the clinical beamline. The diode response to WEPL relationship for a given ‘scout’ beam may be determined within a simulation environment, facilitating the applicability of this dosimetry technique. Measurements for three ‘scout’ beams were compared against simulated detector response with Monte Carlo methods using the Tool for Particle Simulation (TOPAS). Results: Detector response in water equivalent plastic was successfully validated against simulation for spread out Bragg peaks of range 10 cm, 15 cm, and 21 cm (168 MeV, 177 MeV, and 210 MeV) with adjusted R{sup 2} of 0.998. Conclusion: Feasibility has been shown for performing calibration of detector response for a given ‘scout’ beam through simulation for the time resolved diode dosimetry technique.

  18. RSMASS system model development

    International Nuclear Information System (INIS)

    Marshall, A.C.; Gallup, D.R.

    1998-01-01

    1998. A radioisotope space power system model RISMASS is also under development. RISMASS will optimize and predict system masses for radioisotope power sources coupled with close-spaced thermionic diodes. Although RSMASS-D models have been developed for a broad variety of space nuclear power and propulsion systems, only a few concepts will be included in the releasable RSMASS-T computer code. A follow-on effort is recommended to incorporate all previous models as well as solar power system models into one general code. The proposed Space Power and propulsion system MASS (SPMASS) code would provide a consistent analysis tool for comparing a very broad range of alternative power and propulsion systems for any required power level and operating conditions. As for RSMASS-T the SPMASS model should be a certified, fully documented computer code available for general use. The proposed computer program would provide space mission planners with the capability to quickly and cost effectively explore power system options for any space mission. The code should be applicable for power requirements from as low as a few milliwatts (solar and isotopic system options) to many megawatts for reactor power and propulsion systems

  19. High-efficiency AlxGa1-xAs/GaAs cathode for photon-enhanced thermionic emission solar energy converters

    Science.gov (United States)

    Feng, Cheng; Zhang, Yijun; Qian, Yunsheng; Wang, Ziheng; Liu, Jian; Chang, Benkang; Shi, Feng; Jiao, Gangcheng

    2018-04-01

    A theoretical emission model for AlxGa1-xAs/GaAs cathode with complex structure based on photon-enhanced thermionic emission is developed by utilizing one-dimensional steady-state continuity equations. The cathode structure comprises a graded-composition AlxGa1-xAs window layer and an exponential-doping GaAs absorber layer. In the deduced model, the physical properties changing with the Al composition are taken into consideration. Simulated current-voltage characteristics are presented and some important factors affecting the conversion efficiency are also illustrated. Compared with the graded-composition and uniform-doping cathode structure, and the uniform-composition and uniform-doping cathode structure, the graded-composition and exponential-doping cathode structure can effectively improve the conversion efficiency, which is ascribed to the twofold built-in electric fields. More strikingly, this graded bandgap structure is especially suitable for photon-enhanced thermionic emission devices since a higher conversion efficiency can be achieved at a lower temperature.

  20. InAs/InP/InSb Nanowires as Low Capacitance n-n Heterojunction Diodes

    Directory of Open Access Journals (Sweden)

    A. Pitanti

    2011-08-01

    Full Text Available Nanowire diodes have been realized by employing an axial heterojunction between InAs and InSb semiconductor materials. The broken-gap band alignment (type III leads to a strong rectification effect when the current-voltage (I-V characteristic is inspected at room temperature. The additional insertion of a narrow InP barrier reduces the thermionic contribution, which results in a net decrease of leakage current in the reverse bias with a corresponding enhanced rectification in terms of asymmetry in the I-V characteristics. The investigated diodes compare favorably with the ones realized with p-n heterostructured nanowires, making InAs/InP/InSb devices appealing candidates to be used as building blocks for nanowire-based ultrafast electronics and for the realization of photodetectors in the THz spectral range.

  1. High power cascade diode lasers emitting near 2 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

    2016-03-28

    High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

  2. Thermionic system evaluation test (TSET) facility construction: A United States and Russian effort

    International Nuclear Information System (INIS)

    Wold, S.K.

    1993-01-01

    The Thermionic System Evaluation Test (TSET) is a ground test of an unfueled Russian TOPAZ-II in-core thermionic space reactor powered by electric heaters. The facility that will be used for testing of the TOPAZ-II systems is located at the New Mexico Engineering Research Institute (NMERI) complex in Albuquerque, NM. The reassembly of the Russian test equipment is the responsibility of International Scientific Products (ISP), a San Jose, CA, company and Inertek, a Russian corporation, with support provided by engineers and technicians from Phillips Laboratory (PL), Sandia National Laboratories (SNL), Los Alamos National Laboratory (LANL), and the University of New Mexico (UNM). This test is the first test to be performed under the New Mexico Strategic Alliance agreement. This alliance consists of the PL, SNL, LANL, and UNM. The testing is being funded by the Strategic Defense Initiative Organization (SDIO) with the PL responsible for project execution

  3. 3-D simulation study for a thermionic RF gun using an FDTD method

    Energy Technology Data Exchange (ETDEWEB)

    Hama, H. E-mail: hama@lns.tohoku.ac.jp; Hinode, F.; Shinto, K.; Miyamoto, A.; Tanaka, T

    2004-08-01

    Beam dynamics in a thermionic RF gun for a new pre-injector in a future synchrotron radiation facility at Tohoku university has been studied by developing a 3-D Maxwell's equation solver. Backbombardment (BB) effect on a cathode, which is a crucial problem for performance of the thermionic RF gun, has been investigated. It is found that an external dipole magnetic field applying around the cathode is effective to reduce high-energy backstreaming electrons from the accelerating cell. However, the low-energy electrons coming back from the first cell inevitably hit the cathode, so that characteristics of the cathode material seems to be crucial for reduction of the BB effect.

  4. Non-equilibrium thermionic electron emission for metals at high temperatures

    Science.gov (United States)

    Domenech-Garret, J. L.; Tierno, S. P.; Conde, L.

    2015-08-01

    Stationary thermionic electron emission currents from heated metals are compared against an analytical expression derived using a non-equilibrium quantum kappa energy distribution for the electrons. The latter depends on the temperature decreasing parameter κ ( T ) , which decreases with increasing temperature and can be estimated from raw experimental data and characterizes the departure of the electron energy spectrum from equilibrium Fermi-Dirac statistics. The calculations accurately predict the measured thermionic emission currents for both high and moderate temperature ranges. The Richardson-Dushman law governs electron emission for large values of kappa or equivalently, moderate metal temperatures. The high energy tail in the electron energy distribution function that develops at higher temperatures or lower kappa values increases the emission currents well over the predictions of the classical expression. This also permits the quantitative estimation of the departure of the metal electrons from the equilibrium Fermi-Dirac statistics.

  5. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  6. Simulation studies of current transport in metal-insulator-semiconductor Schottky barrier diodes

    International Nuclear Information System (INIS)

    Chand, Subhash; Bala, Saroj

    2007-01-01

    The current-voltage characteristics of Schottky diodes with an interfacial insulator layer are analysed by numerical simulation. The current-voltage data of the metal-insulator-semiconductor Schottky diode are simulated using thermionic emission diffusion (TED) equation taking into account an interfacial layer parameter. The calculated current-voltage data are fitted into ideal TED equation to see the apparent effect of interfacial layer parameters on current transport. Results obtained from the simulation studies shows that with mere presence of an interfacial layer at the metal-semiconductor interface the Schottky contact behave as an ideal diode of apparently high barrier height (BH), but with same ideality factor and series resistance as considered for a pure Schottky contact without an interfacial layer. This apparent BH decreases linearly with decreasing temperature. The effects giving rise to high ideality factor in metal-insulator-semiconductor diode are analysed. Reasons for observed temperature dependence of ideality factor in experimentally fabricated metal-insulator-semiconductor diodes are analysed and possible mechanisms are discussed

  7. Energy balance measurements for the determination of physical and technical operation parameters of thermionic converters

    International Nuclear Information System (INIS)

    Ritz, K.

    1975-01-01

    An introduction into the fundamental theoretical principles of the thermionic Cs converter is followed by the set-up of a special measuring converter as proposed by J. Bohdansky which permits the defined setting of the electrode distance under service conditions. Measurements thus carried out present quantitative data on efficiency, on energy transfer between the electrodes by means of radiation and heat transfer, and on the actual collector potential, the latter which surprisingly shows a distance dependency. (orig./GG) [de

  8. Evaluation of precision in measurements of uranium isotope ratio by thermionic mass spectrometry

    International Nuclear Information System (INIS)

    Moraes, N.M.P. de; Rodrigues, C.

    1977-01-01

    The parameters which affect the precision and accuracy of uranium isotopic ratios measurements by thermionic mass spectrometry are discussed. A statistical designed program for the analysis of the internal and external variances are presented. It was done an application of this statistical methods, in order to get mass discrimination factor, and its standard mean deviation, by using some results already published for 235 U/ 238 U ratio in NBS uranium samples, and natural uranium [pt

  9. Thermionic energy conversion heat - electric power; Termojonisk energiomvandling vaerme-elektrisk energi

    Energy Technology Data Exchange (ETDEWEB)

    Holmlid, L; Svensson, R [Gothenburg Univ. and Chalmers Univ. of Technology (Sweden)

    1993-09-15

    Research and development related to Thermionic Energy Converters (TEC) in Holland and Sweden is directed towards terrestrial applications, while the development work in Russia and the US primarily is directed towards thermionic nuclear reactor for use in space. We have during the project continued our work on the utilization of the so called Rydberg matter in converters. Our patented construction has very good (low) values of the barrier index (figure of merit for the converter), probably the lowest ones ever measured. International patents have been applied for as well. We can summarize the achievements of the project such that solutions to practically all the problems related to the inner function of thermionic converters have been found. During this year a large number of studies have been carried out concerning the properties of the Rydberg matter in the TEC, and related to the highly excited states of Cs which exist in the TEC, partially in cooperation with an American research company. An international conference within the TEC field has been arranged in Gothenburg. Two Ph.D. theses are also under completion within the project

  10. Work function and surface stability of tungsten-based thermionic electron emission cathodes

    Science.gov (United States)

    Jacobs, Ryan; Morgan, Dane; Booske, John

    2017-11-01

    Materials that exhibit a low work function and therefore easily emit electrons into vacuum form the basis of electronic devices used in applications ranging from satellite communications to thermionic energy conversion. W-Ba-O is the canonical materials system that functions as the thermionic electron emitter commercially used in a range of high-power electron devices. However, the work functions, surface stability, and kinetic characteristics of a polycrystalline W emitter surface are still not well understood or characterized. In this study, we examined the work function and surface stability of the eight lowest index surfaces of the W-Ba-O system using density functional theory methods. We found that under the typical thermionic cathode operating conditions of high temperature and low oxygen partial pressure, the most stable surface adsorbates are Ba-O species with compositions in the range of Ba0.125O-Ba0.25O per surface W atom, with O passivating all dangling W bonds and Ba creating work function-lowering surface dipoles. Wulff construction analysis reveals that the presence of O and Ba significantly alters the surface energetics and changes the proportions of surface facets present under equilibrium conditions. Analysis of previously published data on W sintering kinetics suggests that fine W particles in the size range of 100-500 nm may be at or near equilibrium during cathode synthesis and thus may exhibit surface orientation fractions well described by the calculated Wulff construction.

  11. Advances in Thermionic Energy Conversion through Single-Crystal n-Type Diamond

    Directory of Open Access Journals (Sweden)

    Franz A. M. Koeck

    2017-12-01

    Full Text Available Thermionic energy conversion, a process that allows direct transformation of thermal to electrical energy, presents a means of efficient electrical power generation as the hot and cold side of the corresponding heat engine are separated by a vacuum gap. Conversion efficiencies approaching those of the Carnot cycle are possible if material parameters of the active elements at the converter, i.e., electron emitter or cathode and collector or anode, are optimized for operation in the desired temperature range. These parameters can be defined through the law of Richardson–Dushman that quantifies the ability of a material to release an electron current at a certain temperature as a function of the emission barrier or work function and the emission or Richardson constant. Engineering materials to defined parameter values presents the key challenge in constructing practical thermionic converters. The elevated temperature regime of operation presents a constraint that eliminates most semiconductors and identifies diamond, a wide band-gap semiconductor, as a suitable thermionic material through its unique material properties. For its surface, a configuration can be established, the negative electron affinity, that shifts the vacuum level below the conduction band minimum eliminating the surface barrier for electron emission. In addition, its ability to accept impurities as donor states allows materials engineering to control the work function and the emission constant. Single-crystal diamond electrodes with nitrogen levels at 1.7 eV and phosphorus levels at 0.6 eV were prepared by plasma-enhanced chemical vapor deposition where the work function was controlled from 2.88 to 0.67 eV, one of the lowest thermionic work functions reported. This work function range was achieved through control of the doping concentration where a relation to the amount of band bending emerged. Upward band bending that contributed to the work function was attributed to

  12. Modeling of flowing gas diode pumped alkali lasers: dependence of the operation on the gas velocity and on the nature of the buffer gas.

    Science.gov (United States)

    Barmashenko, B D; Rosenwaks, S

    2012-09-01

    A simple, semi-analytical model of flowing gas diode pumped alkali lasers (DPALs) is presented. The model takes into account the rise of temperature in the lasing medium with increasing pump power, resulting in decreasing pump absorption and slope efficiency. The model predicts the dependence of power on the flow velocity in flowing gas DPALs and checks the effect of using a buffer gas with high molar heat capacity and large relaxation rate constant between the 2P3/2 and 2P1/2 fine-structure levels of the alkali atom. It is found that the power strongly increases with flow velocity and that by replacing, e.g., ethane by propane as a buffer gas the power may be further increased by up to 30%. Eight kilowatt is achievable for 20 kW pump at flow velocity of 20  m/s.

  13. Evaluation of Schottky and MgO-based tunnelling diodes with different ferromagnets for spin injection in n-Si

    International Nuclear Information System (INIS)

    Uhrmann, T; Dimopoulos, T; Brueckl, H; Kovacs, A; Kohn, A; Weyers, S; Paschen, U; Smoliner, J

    2009-01-01

    In this work we present the electrical properties of sputter-deposited ferromagnetic (FM) Schottky diodes and MgO-based tunnelling diodes to n-doped (0 0 1) silicon. The effective Schottky barrier height (SBH) has been evaluated as a function of the FM electrode (Co 70 Fe 30 , Co 40 Fe 40 B 20 and Ni 80 Fe 20 ), the silicon doping density (10 15 to 10 18 cm -3 ), the MgO tunnelling barrier thickness (0, 1.5 and 2.5 nm) and post-deposition annealing up to 400 0 C. The ideality factors of the Schottky diodes are close to unity, indicating transport by thermionic emission and the absence of an interfacial oxide layer, which is confirmed by transmission electron microscopy. The effective SBH is found to be approximately 0.65 eV, independent of the FM material and decreasing with increasing doping density. The changes induced by high temperature annealing at the current-voltage characteristic of the Schottky diodes depend strongly on the FM electrode. The effective SBH for the tunnelling diodes is as low as 0.3 eV, which suggests a high density of oxide and interface traps. It is again independent of the FM electrode, decreasing with increasing doping density and annealing temperature. The inclusion of MgO leads to higher thermal stability of the tunnelling diodes. The measured contact resistance values are discussed with respect to the conductivity mismatch for spin injection and detection.

  14. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  15. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  16. Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Chakrabarti, P., E-mail: pchakrabarti.ece@iitbhu.ac.in [Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad 211004 (India); Department of Electronics Engineering, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005 (India)

    2016-08-01

    In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

  17. Fabrication and characterization of Pd/Cu doped ZnO/Si and Ni/Cu doped ZnO/Si Schottky diodes

    International Nuclear Information System (INIS)

    Agarwal, Lucky; Singh, Brijesh Kumar; Tripathi, Shweta; Chakrabarti, P.

    2016-01-01

    In this paper, fabrication and characterization of copper doped ZnO (Cu doped ZnO) based Schottky devices have been reported. Cu doped ZnO thin films have been deposited on p-Si (100) samples by the sol-gel spin coating method. X-Ray diffraction (XRD) and atomic force microscopy (AFM) studies have been done in order to evaluate the structural and morphological properties of the film. The optical properties of the film have been determined by using variable angle ellipsometry. Further, Seebeck measurement of the deposited Cu doped ZnO film leads to positive Seebeck coefficient confirming the p-type conductivity of the sample. The resistivity and acceptor concentration of the film has also been evaluated using four probe measurement system. Pd and Ni metals have been deposited on separate Cu doped ZnO thin film samples using low cost thermal evaporation method to form Schottky contacts. The electrical characterization of the Schottky diode has been performed by semiconductor device analyzer (SDA). Electrical parameters such as barrier height, ideality factor, reverse saturation current and rectification ratio have also been determined for the as-prepared Schottky diode using conventional thermionic emission model and Cheung's method. - Highlights: • Fabrication of sol-gel derived Cu doped ZnO (p-type) Schottky contact proposed. • The p-type Conductivity of the sample confirmed by Seebeck Measurement. • Pd and Ni deposited on Cu doped ZnO film to form Schottky contacts. • Cu doped ZnO expected to emerge as a potential material for thin film solar cells.

  18. The Thermionic System Evaluation Test (TSET): Descriptions, limitations, and the involvement of the space nuclear power community

    International Nuclear Information System (INIS)

    Morris, D.B.

    1993-01-01

    Project and test planning for the Thermionic System Evaluation Test (TSET) Project began in August 1990. Since the formalization of the contract agreement two years ago, the TOPAZ-II testing hardware was delivered in May 1992. In the months since the delivery of the test hardware, Russians and Americans working side-by-side installed the equipment and are preparing to begin testing in early 1993. The procurement of the Russian TOPAZ-II unfueled thermionic space nuclear power system (SNP) provides a unique opportunity to understand a complete thermionic system and enhances the possibility for further study of this type of power conversion for space applications. This paper will describe the program and test article, facility and test article limitations, and how the government and industry are encouraged to be involved in the program

  19. Temperature dependent electrical characterization of organic Schottky diode based on thick MgPc films

    Science.gov (United States)

    Singh, J.; Sharma, R. K.; Sule, U. S.; Goutam, U. K.; Gupta, Jagannath; Gadkari, S. C.

    2017-07-01

    Magnesium phthalocyanine (MgPc) based Schottky diode on indium tin oxide (ITO) substrate was fabricated by thermal evaporation method. The dark current voltage characteristics of the prepared ITO-MgPc-Al heterojunction Schottky diode were measured at different temperatures. The diode showed the non-ideal rectification behavior under forward and reverse bias conditions with a rectification ratio (RR) of 56 at  ±1 V at room temperature. Under forward bias, thermionic emission and space charge limited conduction (SCLC) were found to be the dominant conduction mechanisms at low (below 0.6 V) and high voltages (above 0.6 V) respectively. Under reverse bias conditions, Poole-Frenkel (field assisted thermal detrapping of carriers) was the dominant conduction mechanism. Three different approaches namely, I-V plots, Norde and Cheung methods were used to determine the diode parameters including ideality factor (n), barrier height (Φb), series resistance (R s) and were compared. SCLC mechanism showed that the trap concentration is 5.52  ×  1022 m-3 and it lies at 0.46 eV above the valence band edge.

  20. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles.

    Science.gov (United States)

    Al-Ta'ii, Hassan Maktuff Jaber; Periasamy, Vengadesh; Amin, Yusoff Mohd

    2015-05-21

    Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA) acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0-20 min) of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung's and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung's methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  1. Electronic Properties of DNA-Based Schottky Barrier Diodes in Response to Alpha Particles

    Directory of Open Access Journals (Sweden)

    Hassan Maktuff Jaber Al-Ta'ii

    2015-05-01

    Full Text Available Detection of nuclear radiation such as alpha particles has become an important field of research in recent history due to nuclear threats and accidents. In this context; deoxyribonucleic acid (DNA acting as an organic semiconducting material could be utilized in a metal/semiconductor Schottky junction for detecting alpha particles. In this work we demonstrate for the first time the effect of alpha irradiation on an Al/DNA/p-Si/Al Schottky diode by investigating its current-voltage characteristics. The diodes were exposed for different periods (0–20 min of irradiation. Various diode parameters such as ideality factor, barrier height, series resistance, Richardson constant and saturation current were then determined using conventional, Cheung and Cheung’s and Norde methods. Generally, ideality factor or n values were observed to be greater than unity, which indicates the influence of some other current transport mechanism besides thermionic processes. Results indicated ideality factor variation between 9.97 and 9.57 for irradiation times between the ranges 0 to 20 min. Increase in the series resistance with increase in irradiation time was also observed when calculated using conventional and Cheung and Cheung’s methods. These responses demonstrate that changes in the electrical characteristics of the metal-semiconductor-metal diode could be further utilized as sensing elements to detect alpha particles.

  2. Using Multispectral Imaging to Measure Temperature Profiles and Emissivity of Large Thermionic Dispenser, Cathodes

    International Nuclear Information System (INIS)

    Simmons, D.F.; Fortgang, C.M.; Holtkamp, D.B.

    2001-01-01

    Thermionic dispenser cathodes are widely used in modern high-power microwave tubes. Use of these cathodes has led to significant improvement in performance. In recent years these cathodes have been used in electron linear accelerators (LINACs), particularly in induction LINACs, such as the Experimental Test Accelerator at Lawrence Livermore National Laboratory and the Relativistic Test Accelerator at Lawrence Berkeley National Laboratory. For induction LINACs, the thermionic dispenser cathode provides greater reproducibility, longer pulse lengths, and lower emittance beams than does a field emission cathode. Los Alamos National Laboratory is fabricating a dual-axis X-ray radiography machine called dual-axis radiograph hydrodynamic test (DARHT). The second axis of DARHT consists of a 2-kA, 20-MeV induction LINAC that uses a 3.2-MeV electron gun with a tungsten thermionic-dispenser cathode. Typically the DARHT cathode current density is 10 A/cm 2 at 1050 C. Under these conditions current density is space-charge limited, which is desirable since current density is independent of temperature. At lower temperature (the temperature-limited regime) there are variations in the local current density due to a nonuniform temperature profile. To obtain the desired uniform current density associated with space-charge limited operation, the coolest area on the cathode must be at a sufficiently high temperature so that the emission is space-charge limited. Consequently, the rest of the cathode is emitting at the same space-charge-limited current density but is at a higher temperature than necessary. Because cathode lifetime is such a strong function of cathode temperature, there is a severe penalty for nonuniformity in the cathode temperature. For example, a temperature increase of 50 C means cathode lifetime will decrease by a factor of at least four. Therefore, we are motivated to measure the temperature profiles of our large-area cathodes

  3. Analysis of thermionic DC electron gun for 125 MeV linac

    International Nuclear Information System (INIS)

    Kanno, K.; Sato, Isamu; Sato, K.

    2000-01-01

    The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

  4. Analysis of thermionic DC electron gun for 125 MeV linac

    Energy Technology Data Exchange (ETDEWEB)

    Kanno, K. [Graduate School of Science and Technology, Nihon Univ., Funabashi, Chiba (Japan); Sato, Isamu; Sato, K. [Nihon Univ., Funabashi, Chiba (Japan). Atomic Energy Research Inst] [and others

    2000-07-01

    The beam trace calculation for the 100 kV thermionic DC electron gun with EIMAC 646E cathode, which is currently used for the 125 MeV linac at Nihon University, has been performed using EGUN code. The result showed a strong focus of the beam at the exit of the anode. A better geometry of the gun has been investigated by varying the shape of the wehnelt electrode. Also the trace calculation has been performed for the case of EIMAC 646B, which showed a considerably small emittance compared with that estimated for the present gun. (author)

  5. Transient and steady-state analyses of an electrically heated Topaz-II Thermionic Fuel Element

    International Nuclear Information System (INIS)

    El-Genk, M.S.; Xue, H.

    1992-01-01

    Transient and steady-state analyses of electrically heated, Thermionic Fuel Elements (TFEs) for Topaz-II space power system are performed. The calculated emitter and collector temperatures, load electric power and conversion efficiency are in good agreement with reported data. In this paper the effects or Cs pressure, thermal power input, and load resistance on the steady-state performance of the TFE are also investigated. In addition, the thermal response of the ZrH moderator during a startup transient and following a change in the thermal power input is examined

  6. The outlook for application of powerful nuclear thermionic reactor -powered space electric jet propulsion engines

    International Nuclear Information System (INIS)

    Semyonov, Y.P.; Bakanov, Y.A.; Synyavsky, V.V.; Yuditsky, V.D.

    1997-01-01

    This paper summarizes main study results for application of powerful space electric jet propulsion unit (EJPUs) which is powered by Nuclear Thermionic Power Unit (NTPU). They are combined in Nuclear Power/Propulsion Unit (NPPU) which serves as means of spacecraft equipment power supply and spacecraft movement. Problems the paper deals with are the following: information satellites delivery and their on-orbit power supply during 10-15 years, removal of especially hazardous nuclear wastes, mining of asteroid resources and others. Evaluations on power/time/mass relationship for this type of mission are given. EJPU parameters are compatible with Russian existent or being under development launch vehicle. (author)

  7. Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction

    Science.gov (United States)

    Trushin, Maxim

    2018-04-01

    The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.

  8. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  9. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  10. Analysis of instability growth and collisionless relaxation in thermionic converters using 1-D PIC simulations

    International Nuclear Information System (INIS)

    Kreh, B.B.

    1994-12-01

    This work investigates the role that the beam-plasma instability may play in a thermionic converter. The traditional assumption of collisionally dominated relaxation is questioned, and the beam-plasma instability is proposed as a possible dominant relaxation mechanism. Theory is developed to describe the beam-plasma instability in the cold-plasma approximation, and the theory is tested with two common Particle-in-Cell (PIC) simulation codes. The theory is first confirmed using an unbounded plasma PIC simulation employing periodic boundary conditions, ES1. The theoretically predicted growth rates are on the order of the plasma frequencies, and ES1 simulations verify these predictions within the order of 1%. For typical conditions encountered in thermionic converters, the resulting growth period is on the order of 7 x 10 -11 seconds. The bounded plasma simulation PDP1 was used to evaluate the influence of finite geometry and the electrode boundaries. For this bounded plasma, a two-stream interaction was supported and resulting in nearly complete thermalization in approximately 5 x 10 -10 seconds. Since the electron-electron collision rate of 10 9 Hz and the electron atom collision rate of 10 7 Hz are significantly slower than the rate of development of these instabilities, the instabilities appear to be an important relaxation mechanism

  11. Development of Kabila rocket: A radioisotope heated thermionic plasma rocket engine

    Directory of Open Access Journals (Sweden)

    Kalomba Mboyi

    2015-04-01

    Full Text Available A new type of plasma rocket engine, the Kabila rocket, using a radioisotope heated thermionic heating chamber instead of a conventional combustion chamber or catalyst bed is introduced and it achieves specific impulses similar to the ones of conventional solid and bipropellant rockets. Curium-244 is chosen as a radioisotope heat source and a thermal reductive layer is also used to obtain precise thermionic emissions. The self-sufficiency principle is applied by simultaneously heating up the emitting material with the radioisotope decay heat and by powering the different valves of the plasma rocket engine with the same radioisotope decay heat using a radioisotope thermoelectric generator. This rocket engine is then benchmarked against a 1 N hydrazine thruster configuration operated on one of the Pleiades-HR-1 constellation spacecraft. A maximal specific impulse and power saving of respectively 529 s and 32% are achieved with helium as propellant. Its advantages are its power saving capability, high specific impulses and simultaneous ease of storage and restart. It can however be extremely voluminous and potentially hazardous. The Kabila rocket is found to bring great benefits to the existing spacecraft and further research should optimize its geometric characteristics and investigate the physical principals of its operation.

  12. Design study on an independently-tunable-cells thermionic RF gun

    International Nuclear Information System (INIS)

    Hama, H.; Tanaka, T.; Hinode, F.; Kawai, M.

    2006-01-01

    Characteristics of a thermionic RF gun have been studied by a 3-D simulation code developed using an FDTD (Finite Difference Time Domain) method as a Maxwell's equations solver. The gun is consists of two independent power feeding cavities, so that we call it independently-tunable-cells (ITC)'-RF gun. The first cell is the cathode cell and the second one is an accelerating cell. The ITC gun can be operated at various modes of different RF-power ratio and phase between two cavities. Simulation study shows a velocity-bunching like effect may be occurred in the gun, so that the short pulse beam from the thermionic RF gun is a better candidate to produce the coherent THz synchrotron radiation. Expected bunch length with a total charge of ∼20 pC (1% energy width from the top energy) is around 200 fs (fwhm). Even the beam energy extracted from the gun is varied by which the input powers are changed, almost same shape of the longitudinal phase space can be produced by tuning the phase. (author)

  13. Performance review of thermionic electron gun developed for RF linear accelerators at RRCAT

    International Nuclear Information System (INIS)

    Wanmode, Yashwant; Mulchandani, J.; Reddy, T.S.; Bhisikar, A.; Singh, H.G.; Shrivastava, Purushottam

    2015-01-01

    RRCAT is engaged in development of RF electron linear accelerator for irradiation of industrial and agricultural products. Thermionic electron gun is primary source for this accelerator as beam current in the RF accelerator is modest and thermionic emission is most prevalent option for electron gun development. An electron gun has to meet high cathode emission capability, low filament power, good accessibility for cathode replacement and should provide short time for maintenance. Electron linear accelerator up to beam energy of 10 MeV require electron source of 45-50 keV beam energy and emission current of 1 A. Electron optics of gun and electron beam profile simulations were carried out using CST's particle tracking code and EGUN code. Triode type electron gun of cathode voltage 50 kV pulsed has been designed, developed and integrated with 10 MeV electron linear accelerators at RRCAT. Beam current of more than 600 mA has been measured with faraday cup in the test stand developed for characterizing the electron gun. Two accelerators one is imported and another one developed indigenously has been energized using this electron gun. Beam energy of 5-10 MeV has been achieved with beam current of 250-400 mA by integrating this electron gun with the linear accelerator. This paper reviews the performance of indigenously developed electron gun for both linear accelerators. (author)

  14. Advantages and implications of U233 fueled thermionic space power energy conversion

    International Nuclear Information System (INIS)

    Terrell, C.W.

    1992-01-01

    In this paper two recent analyses are reported which demonstrate advantages of a U233 fueled thermionic fuel element (TFE) compared to 93 w/o U235, and that application (mission) has broad latitude in how space power reactor systems could or should be optimized. A reference thermionic reactor system was selected to provide the basis for the fuel comparisons. Both oxide and metal fuel forms were compared. Of special interest was to estimate the efficiencies of the four fuel forms to produce electrical power. A figure of merit (FOM) was defined which is directly proportional to the electrical average electrical power produced is proportional to the electrical power produced per unit uranium mass. In a TFE the average electrical power produced is proportional to the emitter surface area (Esa), hence the ratio Esa/Mu was selected as the FOM. Results indicate that the choice of fuel type and form leads to wide variations in critical and system masses FOM values, and system total power

  15. Low-temperature thermionics in space nuclear power systems with the safe-type fast reactor

    International Nuclear Information System (INIS)

    Zrodnikov, A.V.; Yarygin, V.I.; Lazarenko, G.E.; Zabudko, A.N.; Ovcharenko, M.K.; Pyshko, A.P.; Mironov, V.S.; Kuznetsov, R.V.

    2007-01-01

    The potentialities of the use of the low-temperature thermionic converters (TIC) with the emitter temperature ≤ 1500 K in the space nuclear power system (SNPS) with the SAFE-type (Safe Affordable Fission Engine) fast reactor proposed and developed by common efforts of American experts have been considered. The main directions of the 'SAFE-300-TEG' SNPS (300 kW(thermal)) design update by replacing the thermoelectric converters with the low-temperature high-performance thermionic converters (with the barrier index V B ≤ 1.9 eV and efficiency ≥ 10%) meant for a long-term operation (5 years at least) as the components of the SAFE-300-TIC SNPS for a Lunar base have been discussed. The concept of the SNPS with the SAFE-type fast reactor and low-temperature TICs with specific electric power of about 1.45 W/cm 2 as the components of the SAFE-300-TIC system meeting the Nasa's initial requirements to a Lunar base with the electric power demand of about 30 kW(electrical) for robotic mission has been considered. The results, involving optimization and mass-and-size estimation, show that the SAFE-300-TIC system meets the initial requirements by Nasa to the lunar base power supply. The main directions of the system update aimed at the output electric power increase up to 100 kW(electrical) have also been presented. (authors)

  16. Design and implementation of a fs-resolved transmission electron microscope based on thermionic gun technology

    Energy Technology Data Exchange (ETDEWEB)

    Piazza, L., E-mail: luca.piazza@epfl.ch [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland); Masiel, D.J. [Integrated Dynamic Electron Solutions, Inc., 455 Bolero Drive, Danville, CA 94526 (United States); LaGrange, T.; Reed, B.W. [Condensed Matter and Materials Division Physical and Life Sciences Directorate, Lawrence Livermore National Laboratory, P.O. Box 808, L-356, Livermore, CA 94550 (United States); Barwick, B. [Department of Physics, Trinity College, 300 Summit St., Hartford, CT 06106 (United States); Carbone, Fabrizio [Laboratory for Ultrafast Microscopy and Electron Scattering (LUMES), ICMP, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne (Switzerland)

    2013-09-23

    Highlights: • We present the implementation of a femtosecond-resolved ultrafast TEM. • This is the first ultrafast TEM based on a thermionic gun geometry. • An additional condenser lens has been used to maximize the electron count. • We achieved a time resolution of about 300 fs and an energy resolution of 1 eV. - Abstract: In this paper, the design and implementation of a femtosecond-resolved ultrafast transmission electron microscope is presented, based on a thermionic gun geometry. Utilizing an additional magnetic lens between the electron acceleration and the nominal condenser lens system, a larger percentage of the electrons created at the cathode are delivered to the specimen without degrading temporal, spatial and energy resolution significantly, while at the same time maintaining the femtosecond temporal resolution. Using the photon-induced near field electron microscopy effect (PINEM) on silver nanowires the cross-correlation between the light and electron pulses was measured, showing the impact of the gun settings and initiating laser pulse duration on the electron bunch properties. Tuneable electron pulses between 300 fs and several ps can be obtained, and an overall energy resolution around 1 eV was achieved.

  17. Thermionic Properties of Carbon Based Nanomaterials Produced by Microhollow Cathode PECVD

    Science.gov (United States)

    Haase, John R.; Wolinksy, Jason J.; Bailey, Paul S.; George, Jeffrey A.; Go, David B.

    2015-01-01

    Thermionic emission is the process in which materials at sufficiently high temperature spontaneously emit electrons. This process occurs when electrons in a material gain sufficient thermal energy from heating to overcome the material's potential barrier, referred to as the work function. For most bulk materials very high temperatures (greater than 1500 K) are needed to produce appreciable emission. Carbon-based nanomaterials have shown significant promise as emission materials because of their low work functions, nanoscale geometry, and negative electron affinity. One method of producing these materials is through the process known as microhollow cathode PECVD. In a microhollow cathode plasma, high energy electrons oscillate at very high energies through the Pendel effect. These high energy electrons create numerous radical species and the technique has been shown to be an effective method of growing carbon based nanomaterials. In this work, we explore the thermionic emission properties of carbon based nanomaterials produced by microhollow cathode PECVD under a variety of synthesis conditions. Initial studies demonstrate measureable current at low temperatures (approximately 800 K) and work functions (approximately 3.3 eV) for these materials.

  18. Synthesis, thermionic emission and magnetic properties of (NdxGd1–x)B6

    International Nuclear Information System (INIS)

    Bao Li-Hong; Zhang Jiu-Xing; Zhou Shen-Lin; Tegus

    2011-01-01

    Polycrystalline rare-earth hexaborides (Nd x Gd 1–x )B 6 (x = 0, 0.2, 0.6, 0.8, 1) were prepared by the reactive spark plasma sintering (SPS) method using mixed powder of GdH 2 , NdH 2 and B. The effects of Nd doping on the crystal structure, the grain orientation, the thermionic emission and the magnetic properties of the hexaboride were investigated by X-ray diffraction, electron backscattered diffraction and magnetic measurements. It is found that all the samples sintered by the SPS method exhibit high densities (> 95%) and high values of Vickers hardness (2319 kg/mm 2 ). The values are much higher than those obtained in the traditional method. With the increase of Nd content, the thermionic emission current density increases from 11 to 16.30 A/cm 2 and the magnetic phase transition temperature increases from 5.85 to 7.95 K. Thus, the SPS technique is a suitable method to synthesize the dense rare-earth hexaborides with excellent properties. (interdisciplinary physics and related areas of science and technology)

  19. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  20. Schottky barrier parameters and low frequency noise characteristics of graphene-germanium Schottky barrier diode

    Science.gov (United States)

    Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Shim, Kyu-Hwan; Cho, Hyunjin; Kim, Myung-Jong; Lee, Sung-Nam; Jeong, Jae-chan; Hong, Hyobong; Choi, Chel-Jong

    2016-03-01

    We investigated the electrical properties of chemical vapor deposition-grown monolayer graphene/n-type germanium (Ge) Schottky barrier diodes (SBD) using current-voltage (I-V) characteristics and low frequency noise measurements. The Schottky barrier parameters of graphene/n-type Ge SBDs, such as Schottky barrier height (VB), ideality factor (n), and series resistance (Rs), were extracted using the forward I-V and Cheung's methods. The VB and n extracted from the forward ln(I)-V plot were found to be 0.63 eV and 1.78, respectively. In contrast, from Cheung method, the VB and n were calculated to be 0.53 eV and 1.76, respectively. Such a discrepancy between the values of VB calculated from the forward I-V and Cheung's methods indicated a deviation from the ideal thermionic emission of graphene/n-type Ge SBD associated with the voltage drop across graphene. The low frequency noise measurements performed at the frequencies in the range of 10 Hz-1 kHz showed that the graphene/n-type Ge SBD had 1/f γ frequency dependence, with γ ranging from 1.09 to 1.12, regardless of applied forward biases. Similar to forward-biased SBDs operating in the thermionic emission mode, the current noise power spectral density of graphene/n-type Ge SBD was linearly proportional to the forward current.

  1. A one-dimensional Q-machine model taking into account charge-exchange collisions

    International Nuclear Information System (INIS)

    Maier, H.; Kuhn, S.

    1992-01-01

    The Q-machine is a nontrivial bounded plasma system which is excellently suited not only for fundamental plasma physics investigations but also for the development and testing of new theoretical methods for modeling such systems. However, although Q-machines have now been around for over thirty years, it appears that there exist no comprehensive theoretical models taking into account their considerable geometrical and physical complexity with a reasonable degree of self-consistency. In the present context we are concerned with the low-density, single-emitter Q-machine, for which the most widely used model is probably the (one-dimensional) ''collisionless plane-diode model'', which has originally been developed for thermionic diodes. Although the validity of this model is restricted to certain ''axial'' phenomena, we consider it a suitable starting point for extensions of various kinds. While a generalization to two-dimensional geometry (with still collisionless plasma) is being reported elsewhere, the present work represents a first extension to collisional plasma (with still one-dimensional geometry). (author) 12 refs., 2 figs

  2. Temperature-Dependent Electrical Characteristics of Au/Si3N4/4H n-SiC MIS Diode

    Science.gov (United States)

    Yigiterol, F.; Güllü, H. H.; Bayraklı, Ö.; Yıldız, D. E.

    2018-03-01

    Electrical characteristics of the Au/Si3N4/4H n-SiC metal-insulator-semiconductor (MIS) diode were investigated under the temperature, T , interval of 160-400 K using current-voltage (I-V), capacitance-voltage ( C {-} V ) and conductance-voltage ( G/ω {-} V ) measurements. Firstly, the Schottky diode parameters as zero-bias barrier height ( Φ_{B0} ) and ideality factor ( n ) were calculated according to the thermionic emission (TE) from forward bias I-V analysis in the whole working T . Experimental results showed that the values of Φ_{B0} were in increasing behavior with increasing T while n values decreased with inverse proportionality in n versus Φ_{{{{B}}0}} plot. Therefore, the non-ideal I-V behavior with inhomogeneous barrier height (BH) formation has been discussed under the assumption of Gaussian distribution (GD). From the GD of BHs, the mean BH was found to be about 1.40 eV with 0.1697 standard deviation and the modified Richardson constant A^{*} of this diode was obtained as 141.65 A/cm2 K2 in good agreement with the literature (the theoretical value of A^{*} is 137.21 A/cm2 K2). The relationship between Φ_{B0} and n showed an abnormal I-V behavior depending on T , and it was modeled by TE theory with GD of BH due to the effect in inhomogeneous BH at the interface. Secondly, according to Cheung's model, series resistance, R_{{S}} values were calculated in the T range of 160-400 K and these values were found to decrease with increasing T . Finally, the density of interface states, D_{{it}} was calculated and the T dependence of energy distribution of D_{{it}} profiles determined the forward I {-} V measurements by taking into account the bias dependence of the effective BH, Φ_{{e}} and n . D_{{it}} were also calculated according to the Hill-Coleman method from C {-} V and G/ω {-} V analysis. Furthermore, the variation of D_{{it}} as a function of frequency, f and T were determined.

  3. Second-order capillary electrophoresis diode array detector data modeled with the Tucker3 algorithm: A novel strategy for Argentinean white wine discrimination respect to grape variety.

    Science.gov (United States)

    Azcarate, Silvana M; de Araújo Gomes, Adriano; Vera-Candioti, Luciana; Cesar Ugulino de Araújo, Mário; Camiña, José M; Goicoechea, Héctor C

    2016-07-01

    Data obtained by capillary electrophoresis with diode array detection (CE-DAD) were modeled with the purpose to discriminate Argentinean white wines samples produced from three grape varieties (Torrontés, Chardonnay, and Sauvignon blanc). Thirty-eight samples of commercial white wine from four wine-producing provinces of Argentina (Mendoza, San Juan, Salta, and Rio Negro) were analyzed. CE-DAD matrices with dimensions of 421 elution times (from 1.17 to 7.39 minutes) × 71 wavelengths (from 227 to 367 nm) were joined in a three way data array and decomposed by Tucker3 method under non-negativity constraint, employing 18, 18 and six factors in the modes 1, 2 and 3, respectively. Using the scores of Tucker model, it was possible to discriminate samples of Argentinean white wine by linear discriminant analysis and Kernel linear discriminant analysis. Core element analysis of the Tucker3 model allows identifying the loading profiles in spectral mode related to Argentinean white wine samples. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Determination of rare earth elements in high purity rare earth oxides by liquid chromatography, thermionic mass spectrometry and combined liquid chromatography/thermionic mass spectrometry

    International Nuclear Information System (INIS)

    Stijfhoorn, D.E.; Stray, H.; Hjelmseth, H.

    1993-01-01

    A high-performance liquid chromatographic (HPLC) method for the determination of rare earth elements in rocks has been modified and used for the determination of rare earth elements (REE) in high purity rare earth oxides. The detection limit was 1-1.5 ng or 2-3 mg/kg when a solution corresponding to 0.5 mg of the rare earth oxide was injected. The REE determination was also carried out by adding a mixture of selected REE isotopes to the sample and analysing the collected HPLC-fractions by mass spectrometry (MS) using a thermionic source. Since the matrix element was not collected, interference from this element during the mass spectrometric analysis was avoided. Detection limits as low as 0.5 mg/kg could then be obtained. Detection limits as low as 0.05 mg/kg were possible by MS without HPLC-pre-separation, but this approach could only be used for those elements that were not affected by the matrix. Commercial samples of high purity Nd 2 O 3 , Gd 2 O 3 and Dy 2 O 3 were analysed in this study, and a comparison of results obtained by HPLC, combined HPLC/MS and direct MS is presented. (Author)

  5. Modeling and optimization of a double-well double-barrier GaN/AlGaN/GaN/AlGaN resonant tunneling diode

    Science.gov (United States)

    Liu, Yang; Gao, Bo; Gong, Min; Shi, Ruiying

    2017-06-01

    The influence of a GaN layer as a sub-quantum well for an AlGaN/GaN/AlGaN double barrier resonant tunneling diode (RTD) on device performance has been investigated by means of numerical simulation. The introduction of the GaN layer as the sub-quantum well turns the dominant transport mechanism of RTD from the 3D-2D model to the 2D-2D model and increases the energy difference between tunneling energy levels. It can also lower the effective height of the emitter barrier. Consequently, the peak current and peak-to-valley current difference of RTD have been increased. The optimal GaN sub-quantum well parameters are found through analyzing the electrical performance, energy band, and transmission coefficient of RTD with different widths and depths of the GaN sub-quantum well. The most pronounced electrical parameters, a peak current density of 5800 KA/cm2, a peak-to-valley current difference of 1.466 A, and a peak-to-valley current ratio of 6.35, could be achieved by designing RTD with the active region structure of GaN/Al0.2Ga0.8 N/GaN/Al0.2Ga0.8 N (3 nm/1.5 nm/1.5 nm/1.5 nm).

  6. Rapid freeze-drying cycle optimization using computer programs developed based on heat and mass transfer models and facilitated by tunable diode laser absorption spectroscopy (TDLAS).

    Science.gov (United States)

    Kuu, Wei Y; Nail, Steven L

    2009-09-01

    Computer programs in FORTRAN were developed to rapidly determine the optimal shelf temperature, T(f), and chamber pressure, P(c), to achieve the shortest primary drying time. The constraint for the optimization is to ensure that the product temperature profile, T(b), is below the target temperature, T(target). Five percent mannitol was chosen as the model formulation. After obtaining the optimal sets of T(f) and P(c), each cycle was assigned with a cycle rank number in terms of the length of drying time. Further optimization was achieved by dividing the drying time into a series of ramping steps for T(f), in a cascading manner (termed the cascading T(f) cycle), to further shorten the cycle time. For the purpose of demonstrating the validity of the optimized T(f) and P(c), four cycles with different predicted lengths of drying time, along with the cascading T(f) cycle, were chosen for experimental cycle runs. Tunable diode laser absorption spectroscopy (TDLAS) was used to continuously measure the sublimation rate. As predicted, maximum product temperatures were controlled slightly below the target temperature of -25 degrees C, and the cascading T(f)-ramping cycle is the most efficient cycle design. In addition, the experimental cycle rank order closely matches with that determined by modeling.

  7. The protozoan, Paramecium primaurelia, as a non-sentient model to test laser light irradiation: The effects of an 808nm infrared laser diode on cellular respiration.

    Science.gov (United States)

    Amaroli, Andrea; Ravera, Silvia; Parker, Steven; Panfoli, Isabella; Benedicenti, Alberico; Benedicenti, Stefano

    2015-07-01

    Photobiomodulation (PBM) has been used in clinical practice for more than 40 years. Unfortunately, conflicting literature has led to the labelling of PBM as a complementary or alternative medicine approach. However, past and ongoing clinical and research studies by reputable investigators have re-established the merits of PBM as a genuine medical therapy, and the technique has, in the last decade, seen an exponential increase in the numbers of clinical instruments available, and their applications. This resurgence has led to a clear need for appropriate experimental models to test the burgeoning laser technology being developed for medical applications. In this context, an ethical model that employs the protozoan, Paramecium primaurelia, is proposed. We studied the possibility of using the measure of oxygen consumption to test PBM by irradiation with an infrared or near-infrared laser. The results show that an 808nm infrared laser diode (1W; 64J/cm²) affects cellular respiration in P. primaurelia, inducing, in the irradiated cells, a significantly (p Paramecium can be an excellent tool in biological assays involving infrared and near-infrared PBM, as it combines the advantages of in vivo results with the practicality of in vitro testing. This test represents a fast, inexpensive and straightforward assay, which offers an alternative to both traditional in vivo testing and more expensive mammalian cellular cultures. 2015 FRAME.

  8. Mission operations for unmanned nuclear electric propulsion outer planet exploration with a thermionic reactor spacecraft.

    Science.gov (United States)

    Spera, R. J.; Prickett, W. Z.; Garate, J. A.; Firth, W. L.

    1971-01-01

    Mission operations are presented for comet rendezvous and outer planet exploration NEP spacecraft employing in-core thermionic reactors for electric power generation. The selected reference missions are the Comet Halley rendezvous and a Jupiter orbiter at 5.9 planet radii, the orbit of the moon Io. The characteristics of the baseline multi-mission NEP spacecraft are presented and its performance in other outer planet missions, such as Saturn and Uranus orbiters and a Neptune flyby, are discussed. Candidate mission operations are defined from spacecraft assembly to mission completion. Pre-launch operations are identified. Shuttle launch and subsequent injection to earth escape by the Centaur D-1T are discussed, as well as power plant startup and the heliocentric mission phases. The sequence and type of operations are basically identical for all missions investigated.

  9. Generation of multi-branch beam with thermionic gun for the Japan linear collider

    International Nuclear Information System (INIS)

    Naito, T.; Akemoto, M.; Matsumonto, H.; Urakawa, J.; Yoshioka, M.; Akiyama, H.

    1992-01-01

    We report on the development of a thermionic gun that is capable of producing multi-bunch beam to be used at the KEK Accelerator Test Facility for the Japan Linear Collider project. Two types of grid pulse generators have been developed. One is an avalanche pulse generator. A Y-646E cathode was successfully operated to generate double-bunch beam with a pulse width shorter than 700 ps, bunch spacing 1.4 ns, and a peak current 4.3 A. The other grid pulse generator is a fast ECL circuit with an RF power amplifier. Generation of 20-pulse trains with 2.1 ns time spacing has been demonstrated. (Author) 4 refs., 6 figs

  10. Thermionic RF Gun and Linac Pre-Injector for SPEAR3

    Energy Technology Data Exchange (ETDEWEB)

    Park, S.

    2003-08-11

    Preparations are underway to upgrade the Spear2 to the third generation light source. Installation of all the subsystems will start in April 2003. Although the Spear3 RF system is entirely different from the present form, the pre-injector gun/linac and booster synchrotron will remain the same even after the upgrade. The thermionic rf gun reliability and stability are to be improved to inject 500 mA of stored current in shortest possible time. When a top-up mode is enforced, where the stored beam decay is replenished to maintain the constant current and thus constant light intensity, the Spear3 will take injection every few minutes. In that case the gun, linac, and booster must stay on at all times. In this report we will describe some improvements made on the gun and linac in the recent past, as well as their present performance and future upgrade to be made.

  11. Communication: Effects of thermionic-gun parameters on operating modes in ultrafast electron microscopy

    Directory of Open Access Journals (Sweden)

    Erik Kieft

    2015-09-01

    Full Text Available Ultrafast electron microscopes with thermionic guns and LaB6 sources can be operated in both the nanosecond, single-shot and femtosecond, single-electron modes. This has been demonstrated with conventional Wehnelt electrodes and absent any applied bias. Here, by conducting simulations using the General Particle Tracer code, we define the electron-gun parameter space within which various modes may be optimized. The properties of interest include electron collection efficiency, temporal and energy spreads, and effects of laser-pulse duration incident on the LaB6 source. We find that collection efficiencies can reach 100% for all modes, despite there being no bias applied to the electrode.

  12. Conceptual engineering design study of thermionic topping of fossil power plants

    Energy Technology Data Exchange (ETDEWEB)

    1978-02-15

    Primary objectives of this study are to investigate alternative design concepts of thermal coupling of thermionic energy converters (TECs) to the steam cycle and the mechanical and electrical aspects of integrating TEC design into the steam power station. The specific tasks include: (1) evaluate design concepts of TEC topping of solvent refined liquified coal-fired steam power plants, with main emphasis devoted to thermal, mechanical, and electrical design aspects. (2) Develop preliminary conceptual design of a modular TEC assembly. (3) Develop preliminary cost estimates of the design modification to a liquified coal-fired steam power plant with TEC topping. (4) Provide support to Thermo Electron Corporation in planning TEC hardware testing. Results are presented in detail.

  13. Photon-Enhanced Thermionic Emission in Cesiated p-Type and n-Type Silicon

    DEFF Research Database (Denmark)

    Reck, Kasper; Dionigi, Fabio; Hansen, Ole

    2014-01-01

    electrons. Efficiencies above 60% have been predicted theoretically for high solar concentration systems. Silicon is an interesting absorber material for high efficiency PETE solar cells, partly due to its mechanical and thermal properties and partly due to its electrical properties, including a close......Photon-enhanced thermionic emission (PETE) is a relatively new concept for high efficiency solar cells that utilize not only the energy of electrons excited across the band gap by photons, as in conventional photovoltaic solar cells, but also the energy usual lost to thermalization of the excited...... to ideal band gap. The work function of silicon is, however, too high for practical PETE implementations. A well-known method for lowering the work function of silicon (and other materials) is to apply approximately a monolayer of cesium to the silicon surface. We present the first measurements of PETE...

  14. Comparative assessment of out-of-core nuclear thermionic power systems

    International Nuclear Information System (INIS)

    Estabrook, W.C.; Koenig, D.R.; Prickett, W.Z.

    1975-01-01

    The hardware selections available for fabrication of a nuclear electric propulsion stage for planetary exploration were explored. The investigation was centered around a heat-pipe-cooled, fast-spectrum nuclear reactor for an out-of-core power conversion system with sufficient detail for comparison with the in-core system studies completed previously. A survey of competing power conversion systems still indicated that the modular reliability of thermionic converters makes them the desirable choice to provide the 240-kWe end-of-life power for at least 20,000 full power hours. The electrical energy will be used to operate a number of mercury ion bombardment thrusters with a specific impulse in the range of about 4,000-5,000 seconds. (Author)

  15. Life Testing and Diagnostics of a Planar Out-of-Core Thermionic Converter

    Science.gov (United States)

    Thayer, Kevin L.; Ramalingam, Mysore L.; Young, Timothy J.; Lamp, Thomas R.

    1994-07-01

    This paper details the design and performance of an automated computer data acquisition system for a planar, out-of-core thermionic converter with CVD rhenium electrodes. The output characteristics of this converter have been mapped for emitter temperatures ranging from approximately 1700K to 2000K, and life testing of the converter is presently being performed at the design point of operation. An automated data acquisition system has been constructed to facilitate the collection of current density versus output voltage (J-V) and temperature data from the converter throughout the life test. This system minimizes the amount of human interaction necessary during the lifetest to measure and archive the data and present it in a usable form. The task was accomplished using a Macintosh Ilcx computer, two multiple-purpose interface boards, a digital oscilloscope, a sweep generator, and National Instrument's LabVIEW application software package.

  16. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  17. Design study of a low-emittance high-repetition rate thermionic rf gun

    Directory of Open Access Journals (Sweden)

    A. Opanasenko

    2017-05-01

    Full Text Available We propose a novel gridless continuous-wave radiofrequency (rf thermionic gun capable of generating nC ns electron bunches with a rms normalized slice emittance close to the thermal level of 0.3 mm mrad. In order to gate the electron emission, an externally heated thermionic cathode is installed into a stripline-loop conductor. Two high-voltage pulses propagating towards each other in the stripline-loop overlap in the cathode region and create a quasielectrostatic field gating the electron emission. The repetition rate of pulses is variable and can reach up to one MHz with modern solid-state pulsers. The stripline attached to a rf gun cavity wall has with the wall a common aperture that allows the electrons to be injected into the rf cavity for further acceleration. Thanks to this innovative gridless design, simulations suggest that the bunch emittance is approximately at the thermal level after the bunch injection into the cavity provided that the geometry of the cathode and aperture are properly designed. Specifically, a concave cathode is adopted to imprint an Ƨ-shaped distribution onto the beam transverse phase-space to compensate for an S-shaped beam distribution created by the spherical aberration of the aperture-cavity region. In order to compensate for the energy spread caused by rf fields of the rf gun cavity, a 3rd harmonic cavity is used. A detailed study of the electrodynamics of the stripline and rf gun cavity as well as the beam optics and bunch dynamics are presented.

  18. Integrated power conditioning for laser diode arrays

    International Nuclear Information System (INIS)

    Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

    1995-01-01

    This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

  19. Using memory-efficient algorithm for large-scale time-domain modeling of surface plasmon polaritons propagation in organic light emitting diodes

    Science.gov (United States)

    Zakirov, Andrey; Belousov, Sergei; Valuev, Ilya; Levchenko, Vadim; Perepelkina, Anastasia; Zempo, Yasunari

    2017-10-01

    We demonstrate an efficient approach to numerical modeling of optical properties of large-scale structures with typical dimensions much greater than the wavelength of light. For this purpose, we use the finite-difference time-domain (FDTD) method enhanced with a memory efficient Locally Recursive non-Locally Asynchronous (LRnLA) algorithm called DiamondTorre and implemented for General Purpose Graphical Processing Units (GPGPU) architecture. We apply our approach to simulation of optical properties of organic light emitting diodes (OLEDs), which is an essential step in the process of designing OLEDs with improved efficiency. Specifically, we consider a problem of excitation and propagation of surface plasmon polaritons (SPPs) in a typical OLED, which is a challenging task given that SPP decay length can be about two orders of magnitude greater than the wavelength of excitation. We show that with our approach it is possible to extend the simulated volume size sufficiently so that SPP decay dynamics is accounted for. We further consider an OLED with periodically corrugated metallic cathode and show how the SPP decay length can be greatly reduced due to scattering off the corrugation. Ultimately, we compare the performance of our algorithm to the conventional FDTD and demonstrate that our approach can efficiently be used for large-scale FDTD simulations with the use of only a single GPGPU-powered workstation, which is not practically feasible with the conventional FDTD.

  20. Inhomogeneous barrier height effect on the current–voltage characteristics of an Au/n-InP Schottky diode

    International Nuclear Information System (INIS)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-01-01

    We report the current–voltage (I–V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I–V characteristic in the temperature range of 280–400 K. This is to study the effect of temperature on the I–V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I–V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A * was 10.32 A·cm −2 ·K −2 , which is close to the theoretical value of 9.4 A·cm −2 ·K −2 for n-InP. The temperature dependence of the I–V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I–V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP. (paper)

  1. Inhomogeneous barrier height effect on the current-voltage characteristics of an Au/n-InP Schottky diode

    Science.gov (United States)

    Zeghdar, Kamal; Dehimi, Lakhdar; Saadoune, Achour; Sengouga, Nouredine

    2015-12-01

    We report the current-voltage (I-V) characteristics of the Schottky diode (Au/n-InP) as a function of temperature. The SILVACO-TCAD numerical simulator is used to calculate the I-V characteristic in the temperature range of 280-400 K. This is to study the effect of temperature on the I-V curves and assess the main parameters that characterize the Schottky diode such as the ideality factor, the height of the barrier and the series resistance. The I-V characteristics are analyzed on the basis of standard thermionic emission (TE) theory and the inhomogeneous barrier heights (BHs) assuming a Gaussian distribution. It is shown that the ideality factor decreases while the barrier height increases with increasing temperature, on the basis of TE theory. Furthermore, the homogeneous BH value of approximately 0.524 eV for the device has been obtained from the linear relationship between the temperature-dependent experimentally effective BHs and ideality factors. The modified Richardson plot, according to the inhomogeneity of the BHs, has a good linearity over the temperature range. The evaluated Richardson constant A* was 10.32 A·cm-2·K-2, which is close to the theoretical value of 9.4 A·cm-2·K-2 for n-InP. The temperature dependence of the I-V characteristics of the Au/n-InP Schottky diode have been successfully explained on the basis of the thermionic emission (TE) mechanism with a Gaussian distribution of the Schottky barrier heights (SBHs). Simulated I-V characteristics are in good agreement with the measurements [Korucu D, Mammadov T S. J Optoelectronics Advanced Materials, 2012, 14: 41]. The barrier height obtained using Gaussian Schottky barrier distribution is 0.52 eV, which is about half the band gap of InP.

  2. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  3. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  4. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  5. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  6. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers; Modelagem dos efeitos termicos e opticos na polpa dentaria durante a irradiacao com os lasers de diodo de neodimio

    Energy Technology Data Exchange (ETDEWEB)

    Farhat, Patricia Bahls de Almeida

    2003-07-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  7. Accurate surface potential determination in Schottky diodes by the use of a correlated current and capacitance voltage measurements. Application to n-InP

    International Nuclear Information System (INIS)

    Ahaitouf, Ali; Ahaitouf, Abdelaziz; Salvestrini, Jean Paul; Srour, Hussein

    2011-01-01

    Based on current voltage (I—V g ) and capacitance voltage (C—V g ) measurements, a reliable procedure is proposed to determine the effective surface potential V d (V g ) in Schottky diodes. In the framework of thermionic emission, our analysis includes both the effect of the series resistance and the ideality factor, even voltage dependent. This technique is applied to n-type indium phosphide (n-InP) Schottky diodes with and without an interfacial layer and allows us to provide an interpretation of the observed peak on the C—V g measurements. The study clearly shows that the depletion width and the flat band barrier height deduced from C—V g , which are important parameters directly related to the surface potential in the semiconductor, should be estimated within our approach to obtain more reliable information. (semiconductor devices)

  8. Reducing Energy Degradation Due to Back-bombardment Effect with Modulated RF Input in S-band Thermionic RF Gun

    Science.gov (United States)

    Kii, Toshiteru; Nakai, Yoko; Fukui, Toshio; Zen, Heishun; Kusukame, Kohichi; Okawachi, Norihito; Nakano, Masatsugu; Masuda, Kai; Ohgaki, Hideaki; Yoshikawa, Kiyoshi; Yamazaki, Tetsuo

    2007-01-01

    Energy degradation due to back-bombardment effect is quite serious to produce high-brightness electron beam with long macro-pulse with thermionic rf gun. To avoid the back-bombardment problem, a laser photo cathode is used at many FEL facilities, but usually it costs high and not easy to operate. Thus we have studied long pulse operation of the rf gun with thermionic cathode, which is inexpensive and easy to operate compared to the photocathode rf gun. In this work, to reduce the energy degradation, we controlled input rf power amplitude by controlling pulse forming network of the power modulator for klystron. We have successfully increased the pulse duration up to 4 μs by increasing the rf power from 7.8 MW to 8.5 MW during the macro pulse.

  9. Fracture-resistant ultralloys for space-power systems: nuclear-thermionic-conversion implications of W,27Re

    International Nuclear Information System (INIS)

    Moraga, N.O.; Jacobsen, D.L.; Morris, J.F.

    1989-01-01

    Rhenium (Re) added to tungsten (W) improves the creep strength, recrystallization resistance and ductility. W,27Re is a good workable ultra alloy for use in space nuclear reactor (SNR) systems and perhaps its most practical processing procedure is sintering. A promising SNR application for such ultralloys is very-high-temperature thermionic energy conversion. Therefore determinations of thermionic and thermal emissive characteristics for sintered W,27Re at temperatures near and above 2000 K in hard vacuum enable both scientific and pragmatic progress. Such research results comprise the data and interpretive presentations in this paper. These findings emphasize the fallacy of characterizing ultralloys similar to W,27Re with single-valued thermophysicochemical properties - such as the work function. They further stress the necessity for investigations of this type to determine and demonstrate effective prototypic ultralloy compositions and processing methods. (author)

  10. The design of a 3 GHz thermionic RF-gun and energy filter for MAX-lab

    CERN Document Server

    Anderberg, B; Demirkan, M; Eriksson, M; Malmgren, L; Werin, S

    2002-01-01

    A new pre-injector has been designed for the MAX-laboratory. It consists of an RF-gun and a magnetic energy filter. The newly designed RF-gun geometry will be operated at 3 GHz in the thermionic mode using a BaO cathode. The pre-injector will provide a 2.3 MeV electron beam in 3 ps micro pulses to a new injector system currently under construction.

  11. Prospects for the use of thermionic nuclear power plants for interorbital transfers of space vehicles in near space

    International Nuclear Information System (INIS)

    Andreev, P.V.; Zhabotinskii, E.E.; Nikonov, A.M.

    1993-01-01

    In a previous study the authors considered the use of thermionic nuclear power plants with a thermal reactor for interorbital transfers of space vehicles by electrojet propulsion systems (EJPSs), opening up broad prospects for putting payloads into a high orbit with relatively inexpensive means for a launch into a reference orbit, e.g., the Proton launch vehicle. This is of major importance for the commercial use of space technology, in particular, for erecting technological platforms for the production of various materials. In the work reported here the authors continue the study of interorbital transfers and explore the potentialities of thermionic NPPs with a thermal reactor and with a fast reactor. In boosted operation the electrical power of the latter may reach several hundred kilowatts. What type of NPP is desirable for testing an electrojet propulsion system in interorbital transfers from a reference orbit to a high orbit, providing that the time is limited, depends on the class of the launch vehicle characterized by the mass M o that the vehicle can carry into the reference orbit, where radiation safety conditions allow the NPP to be started up. Results of studies are presented that give an idea of the rational choice of type of thermionic NPP for the organization in interorbital transfers

  12. Analytical model for the TeraHertz current noise in nanometric Schottky-barrier diodes and heterostructure barrier varactors

    Energy Technology Data Exchange (ETDEWEB)

    Mahi, F Z; Helmaoui, A [Physics of Semiconductor Devices Laboratory (LPDS), University of Bechar (Algeria); Varani, L [Institute of Electronics of the South (IES - CNRS UMR 5214), University of Montpellier (France); Shiktorov, P; Starikov, E; Gruzhinskis, V, E-mail: fati_zo_mahi2002@yahoo.f [Semiconductor Physics Institute, Vilnius (Lithuania)

    2009-11-15

    In this paper we propose an analytical model for the calculation of the spectral density of current fluctuations in Heterostructure-barrier varactors . The structures of the calculated spectra are analyzed in terms of physical processes useful to optimize the device parameters for the extraction of the high-order harmonics.

  13. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  14. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  15. Current transport mechanisms in mercury cadmium telluride diode

    Energy Technology Data Exchange (ETDEWEB)

    Gopal, Vishnu, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [Institute of Defence Scientists and Technologists, CFEES Complex, Brig. S. K. Majumdar Marg, Delhi 110054 (India); Li, Qing; He, Jiale; Hu, Weida, E-mail: vishnu-46@yahoo.com, E-mail: wdhu@mail.sitp.ac.cn [National Lab for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); He, Kai; Lin, Chun [Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

    2016-08-28

    This paper reports the results of modelling of the current-voltage characteristics (I-V) of a planar mid-wave Mercury Cadmium Telluride photodiode in a gate controlled diode experiment. It is reported that the diode exhibits nearly ideal I-V characteristics under the optimum surface potential leading to the minimal surface leakage current. Deviations from the optimum surface potential lead to non ideal I–V characteristics, indicating a strong relationship between the ideality factor of the diode with its surface leakage current. Diode's I–V characteristics have been modelled over a range of gate voltages from −9 V to −2 V. This range of gate voltages includes accumulation, flat band, and depletion and inversion conditions below the gate structure of the diode. It is shown that the I–V characteristics of the diode can be very well described by (i) thermal diffusion current, (ii) ohmic shunt current, (iii) photo-current due to background illumination, and (iv) excess current that grows by the process of avalanche multiplication in the gate voltage range from −3 V to −5 V that corresponds to the optimum surface potential. Outside the optimum gate voltage range, the origin of the excess current of the diode is associated with its high surface leakage currents. It is reported that the ohmic shunt current model applies to small surface leakage currents. The higher surface leakage currents exhibit a nonlinear shunt behaviour. It is also shown that the observed zero-bias dynamic resistance of the diode over the entire gate voltage range is the sum of ohmic shunt resistance and estimated zero-bias dynamic resistance of the diode from its thermal saturation current.

  16. TH-CD-207B-07: Noise Modeling of Single Photon Avalanche Diode (SPAD) for Photon Counting CT Applications

    Energy Technology Data Exchange (ETDEWEB)

    Cheng, Z; Zheng, X; Deen, J; Peng, H [McMaster University, Hamilton, ON (Canada); Xing, L [Stanford University School of Medicine, Stanford, CA (United States)

    2016-06-15

    Purpose: Silicon photomultiplier (SiPM) has recently emerged as a promising photodetector for biomedical imaging applications. Due to its high multiplication gain (comparable to PMT), fast timing, low cost and compactness, it is considered a good candidate for photon counting CT. Dark noise is a limiting factor which impacts both energy resolution and detection dynamic range. Our goal is to develop a comprehensive model for noise sources for SiPM sensors. Methods: The physical parameters used in this work were based upon a test SPAD fabricated in 130nm CMOS process. The SPAD uses an n+/p-well junction, which is isolated from the p-substrate by a deep n-well junction. Inter-avalanche time measurement was used to record the time interval between two adjacent avalanche pulses. After collecting 1×106 counts, the histogram was obtained and multiple exponential fitting process was used to extract the lifetime associated with the traps within the bandgap. Results: At room temperature, the breakdown voltage of the SPAD is ∼11.4V and shows a temperature coefficient of 7.7mV/°C. The dark noise of SPAD increases with both the excess biasing voltage and temperature. The primary dark counts from the model were validated against the measurement results. A maximum relative error of 8.7% is observed at 20 °C with an excess voltage of 0.5V. The probabilities of after-pulsing are found to be dependent of both temperature and excess voltage. With 0.5V excess voltage, the after-pulsing probability is 63.5% at - 30 °C and drops to ∼6.6% at 40 °C. Conclusion: A comprehensive noise model for SPAD sensor was proposed. The model takes into account of static, dynamic and statistical behavior of SPADs. We believe that this is the first SPAD circuit simulation model that includes the band-to-band tunneling dark noise contribution and temporal dependence of the after-pulsing probability.

  17. Nano-scale investigations of electric-dipole-layer enhanced field and thermionic emission from high current density cathodes

    Science.gov (United States)

    Vlahos, Vasilios

    Cesium iodide coated graphitic fibers and scandate cathodes are two important electron emission technologies. The coated fibers are utilized as field emitters for high power microwave sources. The scandate cathodes are promising thermionic cathode materials for pulsed power vacuum electron devices. This work attempts to understand the fundamental physical and chemical relationships between the atomic structure of the emitting cathode surfaces and the superior emission characteristics of these cathodes. Ab initio computational modeling in conjunction with experimental investigations was performed on coated fiber cathodes to understand the origin of their very low turn on electric field, which can be reduced by as much as ten-fold compared to uncoated fibers. Copious amounts of cesium and oxygen were found co-localized on the fiber, but no iodine was detected on the surface. Additional ab initio studies confirmed that cesium oxide dimers could lower the work function significantly. Surface cesium oxide dipoles are therefore proposed as the source of the observed reduction in the turn on electric field. It is also proposed that emission may be further enhanced by secondary electrons from cesium oxide during operation. Thermal conditioning of the coated cathode may be a mechanism by which surface cesium iodide is converted into cesium oxide, promoting the depletion of iodine by formation of volatile gas. Ab initio modeling was also utilized to investigate the stability and work functions of scandate structures. The work demonstrated that monolayer barium-scandium-oxygen surface structures on tungsten can dramatically lower the work function of the underlying tungsten substrate from 4.6 eV down to 1.16 eV, by the formation of multiple surface dipoles. On the basis of this work, we conclude that high temperature kinetics force conventional dispenser cathodes (barium-oxygen monolayers on tungsten) to operate in a non-equilibrium compositional steady state with higher than

  18. Impact of interlayer processing conditions on the performance of GaN light-emitting diode with specific NiOx/graphene electrode.

    Science.gov (United States)

    Chandramohan, S; Kang, Ji Hye; Ryu, Beo Deul; Yang, Jong Han; Kim, Seongjun; Kim, Hynsoo; Park, Jong Bae; Kim, Taek Yong; Cho, Byung Jin; Suh, Eun-Kyung; Hong, Chang-Hee

    2013-02-01

    This paper reports on the evaluation of the impact of introducing interlayers and postmetallization annealing on the graphene/p-GaN ohmic contact formation and performance of associated devices. Current-voltage characteristics of the graphene/p-GaN contacts with ultrathin Au, Ni, and NiO(x) interlayers were studied using transmission line model with circular contact geometry. Direct graphene/p-GaN interface was identified to be highly rectifying and postmetallization annealing improved the contact characteristics as a result of improved adhesion between the graphene and the p-GaN. Ohmic contact formation was realized when interlayer is introduced between the graphene and p-GaN followed by postmetallization annealing. Temperature-dependent I-V measurements revealed that the current transport was modified from thermionic field emission for the direct graphene/p-GaN contact to tunneling for the graphene/metal/p-GaN contacts. The tunneling mechanism results from the interfacial reactions that occur between the metal and p-GaN during the postmetallization annealing. InGaN/GaN light-emitting diodes with NiO(x)/graphene current spreading electrode offered a forward voltage of 3.16 V comparable to that of its Ni/Au counterpart, but ended up with relatively low light output power. X-ray photoelectron spectroscopy provided evidence for the occurrence of phase transformation in the graphene-encased NiO(x) during the postmetallization annealing. The observed low light output is therefore correlated to the phase change induced transmittance loss in the NiO(x)/graphene electrode. These findings provide new insights into the behavior of different interlayers under processing conditions that will be useful for the future development of opto-electronic devices with graphene-based electrodes.

  19. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  20. Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung’s model

    Science.gov (United States)

    Korucu, Demet; Turut, Abdulmecit; Efeoglu, Hasan

    2013-04-01

    The current-voltage (I-V) characteristics of Au/n-GaAs contacts prepared with photolithography technique have been measured in the temperature range of 80-320 K. The ideality factor and barrier height (BH) values have remained almost unchanged between 1.04 and 1.10 and at a value of about 0.79 eV at temperatures above 200 K, respectively. Therefore, the ideality factor values near unity say that the experimental I-V data are almost independent of the sample temperature, that is, contacts have shown excellent Schottky diode behavior above 200 K. An abnormal decrease in the experimental BH Φb and an increase in the ideality factor with a decrease in temperature have been observed below 200 K. This behavior has been attributed to the barrier inhomogeneity by assuming a Gaussian distribution of nanometer-sized patches with low BH at the metal-semiconductor interface. The barrier inhomogeneity assumption is also confirmed by the linear relationship between the BH and the ideality factor. According to Tung’s barrier inhomogeneity model, it has been seen that the value of σT=7.41×10-5 cm2/3 V1/3from ideality factor versus (kT)-1 curve is in close agreement with σT=7.95×10-5 cm2/3 V1/3 value from the Φeff versus (2kT)-1 curve in the range of 80-200 K. The modified Richardson ln(J0/T2)-(qσT)2(Vb/η)2/3/[2(kT)2] versus (kT)-1 plot, from Tung’s Model, has given a Richardson constant value of 8.47 A cm-2 K-2which is in very close agreement with the known value of 8.16 A cm-2 K-2 for n-type GaAs; considering the effective patch area which is significantly lower than the entire geometric area of the Schottky contact, in temperature range of 80-200 K. Thus, it has been concluded that the use of Tung’s lateral inhomogeneity model is more appropriate to interpret the temperature-dependent I-V characteristics in the Schottky contacts.

  1. Surface properties of ceramic/metal composite materials for thermionic converter applications

    International Nuclear Information System (INIS)

    Davis, P.R.; Bozack, M.J.; Swanson, L.W.

    1983-01-01

    Ceramic/metal composite electrode materials are of interest for thermionic energy conversion (TEC) applications for several reasons. These materials consist of submicron metal fibers or islands in an oxide matrix and therefore provide a basis for fabricating finely structured electrodes, with projecting or recessed metallic regions for more efficient electron emission or collection. Furthermore, evaporation and surface diffusion of matrix oxides may provide oxygen enhancement of cesium adsorption and work function lowering at both the collecting and emitting electrode surfaces of the TEC. Finally, the high work function oxide matrix or oxide-metal interfaces may provide efficient surface ionization of cesium for space-charge reduction in the device. The authors are investigating two types of ceramic/metal composite materials. One type is a directionally solidified eutectic consisting of a bulk oxide matrix such as UO 2 or stabilized ZrO 2 with parallel metal fibers (W) running through the oxide being exposed at the surface by cutting perpendicular to the fiber direction. The second type of material, called a surface eutectic, consists of a refractory substrate (Mo) with a thin layer of deposited and segregated material (Mo-Cr 2 O 3 -A1 2 O 3 ) on the surface. The final configuration of this layer is an oxide matrix with metallic islands scattered throughout

  2. The Properties of Binary and Ternary Ti Based Coatings Produced by Thermionic Vacuum Arc (TVA Technology

    Directory of Open Access Journals (Sweden)

    Aurelia Mandes

    2018-03-01

    Full Text Available A series of the multicomponent thin films (binary: Ti-C; Ti-Ag and ternary: Ti-C-Ag; Ti-C-Al were fabricated by Thermionic Vacuum Arc (TVA technology in order to study the wear resistance and the anticorrosion properties. The effects of Ti amount on the microstructure, tribological and morphological properties were subsequently investigated. TVA is an original deposition method using a combination of anodic arc and electron gun systems for the growth of films. The samples were characterized using scanning electron microscope (SEM and a transmission electron microscope (TEM accompanied by selected area electron diffraction (SAED. Tribological properties were studied by a ball-on-disc tribometer in the dry regime and the wettability was assessed by measuring the contact angle with the See System apparatus. Wear Rate results indicate an improved sliding wear behavior for Ti-C-Ag: 1.31 × 10−7 mm3/N m (F = 2 N compared to Ti-C-Al coating wear rate: 4.24 × 10−7 mm3/N m. On the other hand, by increasing the normal load to 3 N an increase to the wear rate was observed for Ti-C-Ag: 2.58 × 10−5 mm3 compared to 2.33 × 10−6 mm3 for Ti-C-Al coating.

  3. Development of a thermionic magnicon amplifier at 11.4 GHz

    International Nuclear Information System (INIS)

    Gold, S.H.; Hafizi, B.; Fliflet, A.W.; Kinkead, A.K.; True, R.

    1997-01-01

    The magnicon is a scanning-beam microwave amplifier tube that is being developed as an rf source for the proposed TeV Next Linear Collider. In it, a solid electron beam is spun up to high transverse momentum in a series of deflection cavities containing synchronously rotating TM modes, and then spun down again in an output cavity whose mode is synchronous with that of the deflection cavities. A recent magnicon experiment at NRL, using a ∼ 650 kV, 225 A, 5.5-mm-diam. electron beam produced from a cold cathode driven by a single-shot Marx generator, demonstrated 14 MW (±3 dB) at 11.12 GHz with 105 efficiency in the synchronous magnicon mode, but was limited by plasma loading in the deflection cavities to a regime in which the last cavity of the deflection system (the penultimate cavity) was unstable. A new 11.4 GHz rep-rated thermionic magnicon experiment is being assembled, using an advanced ultra-high-convergence electron gun driven by a 10 Hz, 1.5 microsecond modulator top produce a 500 kV, 210 A, 2-mm diameter electron beam. The magnicon circuit has been optimized for minimum surface rf fields and maximum efficiency, and will be engineered for high temperature bakeout and high vacuum operation. This experiment should begin operation in the Summer of 1997. The predicted power is 60 MW at ∼ 60% efficiency

  4. Development of a novel thermionic RF electron gun applied on a compact THz-FEL facility

    Science.gov (United States)

    Hu, T. N.; Pei, Y. J.; Qin, B.; Liu, K. F.; Feng, G. Y.

    2018-04-01

    The current requirements from civil and commercial applications lead to the development of compact free-electron laser (FEL)-based terahertz (THz) radiation sources. A picosecond electron gun plays an important role in an FEL-THz facility and attracts significant attention, as machine performance is very sensitive to initial conditions. A novel thermionic gun with an external cathode (EC) and two independently tunable cavities (ITCs) has been found to be a promising alternative to conventional electron sources due to its remarkable characteristics, and correspondingly an FEL injector can achieve a balance between a compact layout and high brightness benefitting from the velocity bunching properties and RF focusing effects in the EC-ITC gun. Nevertheless, the EC-ITC gun has not been extensively examined as part of the FEL injector in the past years. In this regard, to fill this gap, a development focusing on the experimental setup of an FEL injector based on an EC-ITC gun is described in detail. Before assembly, dynamic beam simulations were performed to investigate the optimal mounting position for the Linac associated with the focusing coils, and a suitable radio-frequency (RF) system was established based on a power coupling design and allocation. The testing bench proved to be fully functional through basic experiments using typical diagnostic approaches for estimating primary parameters. Associated with dynamic beam calculations, a performance evaluation for an EC-ITC gun was established while providing indirect testing results for an FEL injector.

  5. Some properties of low-vapor-pressure braze alloys for thermionic converters

    Science.gov (United States)

    Bair, V. L.

    1978-01-01

    Density, dc electrical resistivity, thermal conductivity, and linear thermal expansion are measured for arc-melted rod-shaped samples of binary eutectics of Zr, Hf, Ru, Nb, Ir, Mo, Ta, Os, Re, and W selected as very-low-pressure braze fillers for thermionic converters. The first two properties are measured at 296 K for Zr-21.7 at% Ru, Zr-13 wt% W, Zr-19 wt% W, Zr-22.3 at% Nb, Nb-66.9 at% Ru, Hf-25.3 wt% Re, Zr-25.7 at% Ta, Hf-22.5 at% W, and Nb-35 wt% Mo. The last property is measured from 293 K to 2/3 melting point for specified alloys of different compositions. Resistivities of 0.000055 to 0.000181 ohm-cm are observed with the alloys having resistivities about ten times that of the less resistive constituent metal and about three times that of the more resistive constituent metal, except for Zr-19 wt% W and Nb-35 wt% Mo (greater resistivities). Thermal expansion coefficients vary from 0.000006 to 0.0000105/K. All brazes exhibit linear thermal expansion near that of their constituent metals.

  6. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    International Nuclear Information System (INIS)

    Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

    2014-01-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012 © . RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance

  7. Adherence of diamond films on refractory metal substrates for thermionic applications

    International Nuclear Information System (INIS)

    Tsao, B.H.; Ramalingam, M.L.; Adams, S.F.; Cloyd, J.S.

    1991-01-01

    Diamond films are currently being considered as electrical insulation material for application in the thermionic fuel element of a power producing nuclear reactor system. The function of the diamond insulator in this application is to electrically isolate the collector of each cell in the TFE from the coolant and outer sheath. Deposition of diamond films on plane surfaces of Si/SiO 2 have already been demonstrated to be quite effective. However, the diamond films on refractory metal surfaces tend to spall off in the process of deposition revealing an inefficient adherence characteristic between the film and the substrate. This paper is geared towards explaining this deficiency by way of selected experimentation and the use of analytical tools to predict uncertainties such as the mismatch in coefficient of expansion, micrographic study of the interface between the film and the substrate and X-ray diffraction spectra. The investigation of the adherence characteristics of several diamond films on Mo and Nb substrates revealed that there was an allowable stress that resulted in the formation of the critical thickness for the diamond film

  8. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    Energy Technology Data Exchange (ETDEWEB)

    Rimjaem, S., E-mail: sakhorn.rimjaem@cmu.ac.th [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand); Kusoljariyakul, K.; Thongbai, C. [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai 50200 (Thailand); Thailand Center of Excellence in Physics (ThEP), Commission on Higher Education, Bangkok 10400 (Thailand)

    2014-02-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012{sup ©}. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

  9. RF study and 3-D simulations of a side-coupling thermionic RF-gun

    Science.gov (United States)

    Rimjaem, S.; Kusoljariyakul, K.; Thongbai, C.

    2014-02-01

    A thermionic RF-gun for generating ultra-short electron bunches was optimized, developed and used as a source at a linac-based THz radiation research laboratory of the Plasma and Beam Physics Research Facility, Chiang Mai University, Thailand. The RF-gun is a π/2-mode standing wave structure, which consists of two S-band accelerating cells and a side-coupling cavity. The 2856 MHz RF wave is supplied from an S-band klystron to the gun through the waveguide input-port at the cylindrical wall of the second cell. A fraction of the RF power is coupled from the second cell to the first one via a side-coupling cavity. Both the waveguide input-port and the side-coupling cavity lead to an asymmetric geometry of the gun. RF properties and electromagnetic field distributions inside the RF-gun were studied and numerically simulated by using computer codes SUPERFISH 7.19 and CST Microwave Studio 2012©. RF characterizations and tunings of the RF-gun were performed to ensure the reliability of the gun operation. The results from 3D simulations and measurements are compared and discussed in this paper. The influence of asymmetric field distributions inside the RF-gun on the electron beam properties was investigated via 3D beam dynamics simulations. A change in the coupling-plane of the side-coupling cavity is suggested to improve the gun performance.

  10. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  11. Ion production and bipolar fluxes in a high-current plasma-filled diode

    International Nuclear Information System (INIS)

    Ivanenkov, G.V.

    1982-01-01

    The model and the evolution of behaviour of binary layers (BL) in expanding plasma of high current plasma-filled diode are described. The model estimates ion current and the laws of plasma expansion at the stage of BL intensive growth. The density range (10 12 -10 15 cm -3 ) is determined in which diode impedance growth takes place in connection with BL appearance. The density of ion current at the outlet of diode is 10 A/cm 2

  12. Annealing effect on Schottky barrier inhomogeneity of graphene/n-type Si Schottky diodes

    International Nuclear Information System (INIS)

    Lin, Yow-Jon; Lin, Jian-Huang

    2014-01-01

    Highlights: • The current–voltage characteristics of graphene/n-type Si devices were measured. • The ideality factor increases with the decrease measurement temperatures. • Such behavior is attributed to Schottky barrier inhomogeneities. • Both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing. • Stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers. - Abstract: The current–voltage characteristics of graphene/n-type Si (n-Si) Schottky diodes with and without annealing were measured in the temperature range of −120 to 30 °C and analyzed on the basis of thermionic emission theory. It is found that the barrier height decreases and the ideality factor increases with the decrease measurement temperatures. Such behavior is attributed to Schottky barrier inhomogeneities. It is shown that both the barrier height and the ideality factor can be tuned by changing the annealing temperature. Through the analysis, it can be suspected that a SiO x layer at the graphene/n-Si interfaces influences the electronic conduction through the device and stoichiometry of SiO x is affected by annealing treatment. In addition, both Schottky barrier inhomogeneity and the T 0 effect are affected by annealing treatment, implying that stoichiometry of SiO x has a noticeable effect on the inhomogeneous barriers of graphene/n-Si Schottky diodes

  13. The classical Pierce diode: Using particle simulations on linear and nonlinear behavior and final states

    International Nuclear Information System (INIS)

    Crystal, T.L.; Kuhn, S.; Birdsall, C.K.

    1984-01-01

    The classical Pierce diode is a simple 1-d system of two shorted metal plates, a cold beam of electrons injected from one side and a neutralizing background of rigid ions. While the plasma medium is technically stable, the finiteness of the Pierce system allows stable and unstable operation. It is usefully studied as an archetypical bounded plasma system, related e.g., to Q-machines, particle accelerators, thermionic converters. New particle simulations of the Pierce diode have successfully recovered many novel linear phenomena including the dominant linear eigenmodes (seen in the internal electrostatic fields), and the dominant and subdominant eigenfrequencies, (seen both in the internal electrostatics and in the external circuit current, J/sub ext/(t)). These simulation results conform very well to detailed predictions of a new linear analysis. The final (nonlinear) state recovered can show critical dependence on initial (linear perturbation) conditions, and can be made steady-state (d.c.) or periodic-oscillatory by simply changing the initial conditions by a factor of 10/sup -4/ or less. A third class of final state is also possible which has oscillations which seem to be nonperiodic

  14. Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory.

    Science.gov (United States)

    Lee, Hong-Sub; Park, Hyung-Ho

    2016-06-22

    Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.

  15. InGaAs-based planar barrier diode as microwave rectifier

    Science.gov (United States)

    Farhani Zakaria, Nor; Rizal Kasjoo, Shahrir; Zailan, Zarimawaty; Mohamad Isa, Muammar; Arshad, Mohd Khairuddin Md; Taking, Sanna

    2018-06-01

    In this report, we proposed and simulated a new planar nonlinear rectifying device fabricated using InGaAs substrate and referred to as a planar barrier diode (PBD). Using an asymmetrical inverse-arrowhead-shaped structure between the electrodes, a nonuniform depletion region is developed, which creates a triangular energy barrier in the conducting channel. This barrier is voltage dependent and can be controlled by the applied voltage across the PBD, thus resulting in nonlinear diode-like current–voltage characteristics; thus it can be used as a rectifying device. The PBD’s working principle is explained using thermionic emission theory. Furthermore, by varying the PBD’s geometric design, the asymmetry of the current–voltage characteristics can be optimized to realize superior rectification performance. By employing the optimized structural parameters, the obtained cut-off frequency of the device was approximately 270 GHz with a curvature coefficient peak of 14 V‑1 at a low DC bias voltage of 50 mV.

  16. Particle beam dynamics in a magnetically insulated coaxial diode

    International Nuclear Information System (INIS)

    Korenev, V.G.; Magda, I.I.; Sinitsin, V.G.

    2015-01-01

    The dynamics of charged particle beams emitted from a cathode into a smooth coaxial diode with magnetic insulation is studied with the aid of 3-D PIC simulation. The processes controlling space charge formation and its evolution in the diode are modeled for geometries typical of high-voltage millimeter wave magnetrons that are characterized by very high values of emission currents, hence high space charge densities.

  17. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Energy Technology Data Exchange (ETDEWEB)

    Erdoğan, Erman, E-mail: e.erdogan@alparslan.edu.tr [Department of Physics, Faculty of Art and Science, Muş Alparslan University, Muş 49250 (Turkey); Kundakçı, Mutlu [Department of Physics, Faculty of Science, Atatürk University, Erzurum 25240 (Turkey)

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10{sup −5} mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  18. Room temperature current-voltage (I-V) characteristics of Ag/InGaN/n-Si Schottky barrier diode

    Science.gov (United States)

    Erdoğan, Erman; Kundakçı, Mutlu

    2017-02-01

    Metal-semiconductors (MSs) or Schottky barrier diodes (SBDs) have a significant potential in the integrated device technology. In the present paper, electrical characterization of Ag/InGaN/n-Si Schottky diode have been systematically carried out by simple Thermionic method (TE) and Norde function based on the I-V characteristics. Ag ohmic and schottky contacts are deposited on InGaN/n-Si film by thermal evaporation technique under a vacuum pressure of 1×10-5 mbar. Ideality factor, barrier height and series resistance values of this diode are determined from I-V curve. These parameters are calculated by TE and Norde methods and findings are given in a comparetive manner. The results show the consistency for both method and also good agreement with other results obtained in the literature. The value of ideality factor and barrier height have been determined to be 2.84 and 0.78 eV at room temperature using simple TE method. The value of barrier height obtained with Norde method is calculated as 0.79 eV.

  19. Characterization and modeling of broad spectrum InAs-GaAs quantum-dot superluminescent diodes emitting at 1.2-1.3 μm

    NARCIS (Netherlands)

    Rossetti, M.; Li, L.; Markus, A.; Fiore, A.; Occhi, L.; Velez, C.; Mikhrin, S.; Krestnikov, I.; Kovsh, A.

    2007-01-01

    High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of ?30-50 mW are achieved using 18 QD layers with p-doped GaAs spacers. At these high powers the device operates in a regime of broad

  20. Use of epitaxial silicon diodes in photon dosimetry

    International Nuclear Information System (INIS)

    Pereira, Lilian Nunes

    2013-01-01

    In this work we report on results obtained with two rad-hard epitaxial (EPI) silicon diodes as on-line dosimeter for diagnostic radiology, mammography and computed tomography, in the 28 kV to 150 kV range. The epitaxial diodes used were processed at University of Hamburg on 50 μm thick epitaxial silicon layer. One sample was not irradiated before using as a dosimeter, while the other received a gamma pre-dose of 200kGy from 60 Co. For comparison, a standard float zone silicon diode was also studied. The samples irradiation was performed using X-ray beams from a Pantak/Seifert generator, model Isovolt 160 HS, previously calibrated with standardized ionization chambers, located at Laboratorio de Calibracao de Instrumentos of IPEN-CNEN/SP. The diode was connected to an electrometer Keithley 6517B in the photovoltaic mode. Irradiations were carried out with the diodes positioned at lm from the X-ray tube (focal spot). The main dosimetric parameters of the EPI samples were evaluated in according to IEC 61674 norm. The calibration coefficients of the diode, in terms of air kerma, were also determined. The repeatability was measured with photon beams of all qualities. The current signals induced showed the diodes are stable, characterized by coefficients of variation less than 0.3%. The current response of the unirradiated EPI diode has been shown to be very linear with dose-rate in the range of 0.8 up to 77.2 mGy/min. A linear relation between charge and dose in the whole energy range was observed for the three samples. It is important to notice that for EPI diodes non energy dependence was observed for mammography beams and until 70kV for radiodiagnostic qualities. The unirradiated diode presented sensitivity higher than the others, showing a decrease of 8% in this parameter after accumulated dose of 49.15 Gy. The dark currents were stable about 0.4 pA during the irradiations, value 10 4 higher than the lowest photocurrents measured. The directional response of both

  1. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  2. Relativistic properties of spherical diodes with a radial electron flux

    International Nuclear Information System (INIS)

    Chetvertkov, V.I.

    1987-01-01

    Forward and backward electron diodes with concentric spherical electrodes (inner cathode, outer anode or vice versa) are considered under the assumption that the emission is limited by the space charge and the guiding magnetic field is predominantly radial within a region of solid angle α f < 4π bounding the electron flux. The Poisson equations for the relativistic factor γ are solved for generalized model dependences. Ultrarelativistic and new nonrelativistic solutions are found, and analytic approximations to the solution near the cathode are used to carry out numerical calculations. The characteristics of forward and backward diodes turn out to be related to the exact solutions for a planar diode. Accurate approximations are found for calculating the diode parameters in a wide range of voltages; they can also be used to check the validity of the 3/2 laws and the ultrarelativistic solutions

  3. Irradiation behaviour of UO2/Mo porous cermets for thermionic converters

    International Nuclear Information System (INIS)

    Stora, J.P.; Kauffmann, Y.

    1975-01-01

    Two types of UO 2 Mo porous cernets have been fabricated and irradiated in a Cythere irradiation device. The first cermet is constituted by little bits of dense fuel in which the two constituants are finely dispersed. The whole open porosity is located between the granules. This type of cermet is called breche (33.4vol%UO 2 , 51vol%Mo, 14.8vol%porosity). At the end of the irradiation the burn up was 19000MWd/t(U) and neither swelling of the cermet nor deformation of the can were noted. On the contrary, a shrinkage of the emitter was observed attributed to a fuel densification under irradiation. The second type of cermet is called macrogranule (36vol%UO 2 , 49vol%Mo 15vol%porosity). UO 2 granules of 0.07cm mean diameter are dispersed in the molybdenum matrix. The porosity is regularly distributed all around the UO 2 kernels. The post irradiation metrology shows that the emitter is fairly stable. Only a slight ovalisation of about 0.5% was noted, but the granules of UO 2 were redistributed inside the molybdenum matrix, overlapping the metallic cavity by a condensation-evaporation process. The matrix has crept into the central void and consequently the volume has grown and the whole porosity has increased from about 15% to about 23%. This creeping is due to the fission gas pressure in the molybdenum cavities after 3000 hours of irradiation. In conclusion two types of cermets have shown good behaviour under irradiation and should allow lifetimes of several thousand hours of operation for thermionic fuel elements [fr

  4. A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

    Science.gov (United States)

    Morris, J. F.; Merrill, O. S.; Reddy, H. K.

    1981-01-01

    Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

  5. High power densities from high-temperature material interactions. [in thermionic energy conversion and metallic fluid heat pipes

    Science.gov (United States)

    Morris, J. F.

    1981-01-01

    Thermionic energy conversion (TEC) and metallic-fluid heat pipes (MFHPs), offering unique advantages in terrestrial and space energy processing by virtue of operating on working-fluid vaporization/condensation cycles that accept great thermal power densities at high temperatures, share complex materials problems. Simplified equations are presented that verify and solve such problems, suggesting the possibility of cost-effective applications in the near term for TEC and MFHP devices. Among the problems discussed are: the limitation of alkali-metal corrosion, protection against hot external gases, external and internal vaporization, interfacial reactions and diffusion, expansion coefficient matching, and creep deformation.

  6. A program-management plan with critical-path definition for Combustion Augmentation with Thermionic Energy Conversion (CATEC)

    Science.gov (United States)

    Morris, J. F.; Merrill, O. S.; Reddy, H. K.

    Thermionic energy conversion (TEC) is discussed. In recent TEC-topping analyses, overall plant efficiency (OPE) and cost of electricity (COE) improved slightly with current capabilities and substantially with fully matured technologies. Enhanced credibility derives from proven hot-corrosion protection for TEC by silicon-carbide clads in fossil fuel combustion products. Combustion augmentation with TEC (CATEC) affords minimal cost and plant perturbation, but with smaller OPE and COE improvements than more conventional topping applications. Risk minimization as well as comparative simplicity and convenience, favor CATEC for early market penetration. A program-management plan is proposed. Inputs, characteristics, outputs and capabilities are discussed.

  7. Effect of the work function and emission of the collector on the parameters of thermionic converters (TC)

    International Nuclear Information System (INIS)

    Kaibyshev, V.Z.

    1986-01-01

    In the optimal, relative to the temperature of the collector, state of modern thermionic converters (TC) the emission of the electrons from it has a substantial effect on the voltage drop in the gap. This paper preents an analysis of the boundary conditions at the collector of the TC. Calculations are presented which show that with a constant current the plasma parameters at the boundary with the collector are virtually independent of the emission from the collector right up to vanishing of the potential jump. The optimal regime with respect to temperatuer and work function of the collector is examined. The collector with a nonuniform work function is discussed

  8. Design, construction and measurements of an alpha magnet as a solution for compact bunch compressor for the electron beam from Thermionic RF Gun

    Science.gov (United States)

    Rajabi, A.; Jazini, J.; Fathi, M.; Sharifian, M.; Shokri, B.

    2018-03-01

    The beam produced by a thermionic RF gun has wide energy spread that makes it unsuitable for direct usage in photon sources. Here in the present work, we optimize the extracted beam from a thermionic RF gun by a compact economical bunch compressor. A compact magnetic bunch compressor (Alpha magnet) is designed and constructed. A comparison between simulation results and experimental measurements shows acceptable conformity. The beam dynamics simulation results show a reduction of the energy spread as well as a compression of length less than 1 ps with 2.3 mm-mrad emittance.

  9. Investigation of thermometrical characteristics of p+–n-GaP diodes

    Directory of Open Access Journals (Sweden)

    Sypko N. I.

    2008-12-01

    Full Text Available The method of reception of p+–n-diode epitaxial structures of GaP from liquid phase is developed. In the temperature range of 80—520 K thermometric and current-voltage characteristics of test models of diode temperature sensors are measured and their basic technical parameters are determined. Perspectivity of developed GaP-diodes application as sensitive elements of high-temperature sensor is shown.

  10. Efficient thermal diode with ballistic spacer

    Science.gov (United States)

    Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

    2018-03-01

    Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

  11. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  12. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  13. Time-resolved diode dosimetry calibration through Monte Carlo modeling for in vivo passive scattered proton therapy range verification.

    Science.gov (United States)

    Toltz, Allison; Hoesl, Michaela; Schuemann, Jan; Seuntjens, Jan; Lu, Hsiao-Ming; Paganetti, Harald

    2017-11-01

    Our group previously introduced an in vivo proton range verification methodology in which a silicon diode array system is used to correlate the dose rate profile per range modulation wheel cycle of the detector signal to the water-equivalent path length (WEPL) for passively scattered proton beam delivery. The implementation of this system requires a set of calibration data to establish a beam-specific response to WEPL fit for the selected 'scout' beam (a 1 cm overshoot of the predicted detector depth with a dose of 4 cGy) in water-equivalent plastic. This necessitates a separate set of measurements for every 'scout' beam that may be appropriate to the clinical case. The current study demonstrates the use of Monte Carlo simulations for calibration of the time-resolved diode dosimetry technique. Measurements for three 'scout' beams were compared against simulated detector response with Monte Carlo methods using the Tool for Particle Simulation (TOPAS). The 'scout' beams were then applied in the simulation environment to simulated water-equivalent plastic, a CT of water-equivalent plastic, and a patient CT data set to assess uncertainty. Simulated detector response in water-equivalent plastic was validated against measurements for 'scout' spread out Bragg peaks of range 10 cm, 15 cm, and 21 cm (168 MeV, 177 MeV, and 210 MeV) to within 3.4 mm for all beams, and to within 1 mm in the region where the detector is expected to lie. Feasibility has been shown for performing the calibration of the detector response for three 'scout' beams through simulation for the time-resolved diode dosimetry technique in passive scattered proton delivery. © 2017 The Authors. Journal of Applied Clinical Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

  14. X-ray Diffraction Studies of the Structure and Thermochemistry of Alkaline-Earth Oxide-Coated Thermionic Cathodes

    Science.gov (United States)

    Karikari, E. K.; Bassey, E.; Wintucky, Edwin G.

    1998-01-01

    NASA LeRC has a broad, active cathode technology development program in which both experimental and theoretical studies are being employed to further development of thermionic cathodes for use as electron sources in vacuum devices for communications and other space applications. One important type of thermionic cathode under development is the alkaline-earth oxide-coated (BaO, SrO, CaO) cathode. Significant improvements in the emission characteristics of this cathode have been obtained through modification of the chemical composition and morphology of the oxide coating, with the best result thus far coming from the addition of In2O3 and Sc2O3. Whereas the In2O3 produces a finer, more uniform particle structure, the exact chemical state and role of the Sc2O3 in the emission enhancement is unknown. The purpose of this cooperative agreement is to combine the studies of the surface chemistry and electron emission at NASA LeRC of chemically modified oxide coatings with a study of the thermochemistry and crystal structure using X-ray diffraction equipment and expertise at Clark Atlanta University (CAU). The study at CAU is intended to provide the description and understanding of the structure and thermochemistry needed for further improvement and optimization of the modified coatings. A description of the experimental procedure, preliminary X-ray diffraction test results, together with the design of an ultrahigh vacuum chamber necessary for high temperature thermochemistry studies will be presented.

  15. Low work-function thermionic emission and orbital-motion-limited ion collection at bare-tether cathodic contact

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin, E-mail: xin.chen@upm.es; Sanmartín, J. R., E-mail: juanr.sanmartin@upm.es [Departamento de Física Aplicada, Escuela Técnica Superior de Ingeniería Aeronáutica y del Espacio, Universidad Politécnica de Madrid, Plaza Cardenal Cisneros, 3, 28040 Madrid (Spain)

    2015-05-15

    With a thin coating of low-work-function material, thermionic emission in the cathodic segment of bare tethers might be much greater than orbital-motion-limited (OML) ion collection current. The space charge of the emitted electrons decreases the electric field that accelerates them outwards, and could even reverse it for high enough emission, producing a potential hollow. In this work, at the conditions of high bias and relatively low emission that make the potential monotonic, an asymptotic analysis is carried out, extending the OML ion-collection analysis to investigate the probe response due to electrons emitted by the negatively biased cylindrical probe. At given emission, the space charge effect from emitted electrons increases with decreasing magnitude of negative probe bias. Although emitted electrons present negligible space charge far away from the probe, their effect cannot be neglected in the global analysis for the sheath structure and two thin layers in between sheath and the quasineutral region. The space-charge-limited condition is located. It is found that thermionic emission increases the range of probe radius for OML validity and is greatly more effective than ion collection for cathodic contact of tethers.

  16. Comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element

    International Nuclear Information System (INIS)

    Wernsman, Bernard

    1997-01-01

    A comparison between steady-state and dynamic I-V measurements from a single-cell thermionic fuel element (TFE) is made. The single-cell TFE used in this study is the prototype for the 40 kW e space nuclear power system that is similar to the 6 kW e TOPAZ-II. The steady-state I-V measurements influence the emitter temperature due to electron cooling. Therefore, to eliminate the steady-state I-V measurement influence on the TFE and provide a better understanding of the behavior of the thermionic energy converter and TFE characteristics, dynamic I-V measurements are made. The dynamic I-V measurements are made at various input power levels, cesium pressures, collector temperatures, and steady-state current levels. From these measurements, it is shown that the dynamic I-V's do not change the TFE characteristics at a given operating point. Also, the evaluation of the collector work function from the dynamic I-V measurements shows that the collector optimization is not due to a minimum in the collector work function but due to an emission optimization. Since the dynamic I-V measurements do not influence the TFE characteristics, it is believed that these measurements can be done at a system level to understand the influence of TFE placement in the reactor as a function of the core thermal distribution

  17. Particle Simulations of a Thermionic RF Gun with Gridded Triode Structure for Reduction of Back-Bombardment

    CERN Document Server

    Kusukame, K; Kii, T; Masuda, K; Nakai, Y; Ohgaki, H; Yamazaki, T; Yoshikawa, K; Zen, H

    2005-01-01

    Thermionic RF guns show advantageous features compared with photocathode ones such as easy operation and much higher repetition rate of micropulses, both of which are suitable for their application to high average power FELs. They however suffer from the back-bombardment effect [1], i.e., in conventional RF guns, electrons are extracted from cathode also in the latter half of accelerating phase and tend to back-stream to hit the cathode, and as a result the macropulse duration is limited down to severalμsec Against this adverse effect in thermionic RF guns, introduction of the triode structure has been proposed [2], where the accelerating phase and amplitude nearby the cathode can be controlled regardless of the phase of the first accelerating cell in the conventional RF gun. Our one-dimensional particle simulation results predict that the back-bombardment power can be reduced by 99 % only with 30-40 kW RF power fed to the grid in the present triode structure with an optimal phase difference from th...

  18. Ion channelling analysis of pre-amorphised silicon diodes using a nuclear microprobe

    International Nuclear Information System (INIS)

    Thornton, J.; Paus, K.C.

    1988-01-01

    Aligned and random ion channelling analysis was performed on p + n diode structures in silicon, with the Surrey nuclear microprobe. Three different types of diode were investigated, each pre-amorphised by a different ion (Si + , Ge + or Sn + ) before the p + region was formed by BF 2 + implantation. The ion channelling measurements are presented and compared with previously published electrical measurements on these diodes. Relatively large residual disorder and junction leakage currents were found for the Si + pre-amorphised diodes; however, all the diodes were leaky. The results are consistent with dislocation loops within the depletion regions of the diodes causing both the residual disorder and the large leakage currents. Cross-sectional transmission electron microscopy studies support this model. (author)

  19. Determination of reference data of REB diodes by using a numerical method for different applications

    International Nuclear Information System (INIS)

    Sinman, S.; Sinman, A.

    1982-01-01

    In this study, some reference data of a REB diode are presented functionally. These given characteristics are consisted of the computational results. Generally the numerical scheme depends upon the essential parameters of the charged transmission line and Child-Langmuir's diode model. By this system, further the correlation functions, some other definite functions such as the voltage of transmission line Vsub(L)(t), the diode voltage Vsub(d)(t), the diode current Isub(d)(t), the diode impedance Rsub(d)(t), the diode input power Wsub(d)(t), the dissipated energy Usub(d)(t), the efficiency phi, the beam density nsub(b)(t), the relativistic beam energy Usub(b)(t), and the intrinsic impedance Zsub(int)(t) have also been investigated. (author)

  20. Modelling thermionic emission by using a two-level mechanical system

    International Nuclear Information System (INIS)

    Battaglia, O.R.

    2008-01-01

    The Boltzmann factor is at the basis of a great amount of thermodynamic and statistical physics, both classical and quantum. It describes the behaviour of natural systems that exchange energy with the environment. However, why does the expression have that specific form? The Feynman Lectures on Physics justifies it heuristically by referencing to the exponential atmosphere example. Thermodynamics textbooks usually give a more or less complete explanation that mainly involves a mathematical analysis, where it is hard to see the logic flow. Moreover, the necessary mathematics is not at the level of high school or college students' preparation. Here we present an experiment and a simulation at deriving the Boltzmann factor expression and illustrating the fundamental concepts and principles of statistical mechanics. Experiments and simulations are used in order to visualise the mechanism involved; the experiments use easily available laboratory equipment, and simulations are developed in Net Logo, a software environment that, besides having a really friendly interface, allows the user to easily interact with the algorithm, as well as to modify it.

  1. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  2. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  3. Power series fitting of current-voltage characteristics of Al doped ZnO thin film-Sb doped (Ba{sub 0.8}Sr{sub 0.2})TiO{sub 3} heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sirikulrat, N., E-mail: scphi003@chiangmai.ac.th

    2012-02-29

    The current-voltage (I-V) relationship of aluminum doped zinc oxide thin film-antimony doped barium strontium titanate single heterojunction diodes was investigated. The linear I-V characteristics are similar to those of the PN junction diodes. The linear conduction at a low forward bias voltage as predicted by the space charge limited current theory and the trap free square law at a higher forward voltage are observed. The overall current density-voltage (J-V) characteristics of the diodes are found to be well described by the Power Series Equation J= N-Ary-Summation {sub m}C{sub m}V{sup m} where C{sub m} is the leakage constant at particular power m with the best fit for the power m found to be at the fourth and fifth orders for the forward and reverse bias respectively. - Highlights: Black-Right-Pointing-Pointer The n-n isotype heterojunction diodes of ceramic oxide semiconductors were prepared. Black-Right-Pointing-Pointer The current density-voltage (J-V) curves were analyzed using the Power Series (PS). Black-Right-Pointing-Pointer The J-V characteristics were found to be well described with PS at low order. Black-Right-Pointing-Pointer The thermionic emission and diode leakage currents were comparatively discussed.

  4. Non-Reciprocal Geometric Wave Diode by Engineering Asymmetric Shapes of Nonlinear Materials

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Jie [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Li, Nianbei [Tongji Univ., Shanghai Shi (China)

    2014-02-18

    Unidirectional nonreciprocal transport is at the heart of many fundamental problems and applications in both science and technology. Here we study how to design the novel wave diode devices to realize the non-reciprocal wave propagations. Analytical results reveal that such non-reciprocal wave propagation can be purely induced by asymmetric geometry in nonlinear materials. The detailed numerical simulations are performed for a more realistic geometric wave diode model with typical asymmetric shape, where good non-reciprocal wave diode effect has been demonstrated. The results open a way for making wave diodes efficiently simply through shape engineering.

  5. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  6. Simultaneous Determination of Iron, Copper and Cobalt in Food Samples by CCD-diode Array Detection-Flow Injection Analysis with Partial Least Squares Calibration Model

    International Nuclear Information System (INIS)

    Mi Jiaping; Li Yuanqian; Zhou Xiaoli; Zheng Bo; Zhou Ying

    2006-01-01

    A flow injection-CCD diode array detection spectrophotometry with partial least squares (PLS) program for simultaneous determination of iron, copper and cobalt in food samples has been established. The method was based on the chromogenic reaction of the three metal ions and 2- (5-Bromo-2-pyridylazo)-5-diethylaminophenol, 5-Br-PADAP in acetic acid - sodium acetate buffer solution (pH5) with Triton X-100 and ascorbic acid. The overlapped spectra of the colored complexes were collected by charge-coupled device (CCD) - diode array detector and the multi-wavelength absorbance data was processed using partial least squares (PLS) algorithm. Optimum reaction conditions and parameters of flow injection analysis were investigated. The samples of tea, sesame, laver, millet, cornmeal, mung bean and soybean powder were determined by the proposed method. The average recoveries of spiked samples were 91.80%∼100.9% for Iron, 92.50%∼108.0% for Copper, 93.00%∼110.5% for Cobalt, respectively with relative standard deviation (R.S.D) of 1.1%∼12.1%. The sampling rate is 45 samples h -1 . The determination results of the food samples were in good agreement between the proposed method and ICP-AES

  7. Simultaneous Determination of Iron, Copper and Cobalt in Food Samples by CCD-diode Array Detection-Flow Injection Analysis with Partial Least Squares Calibration Model

    Energy Technology Data Exchange (ETDEWEB)

    Mi Jiaping; Li Yuanqian; Zhou Xiaoli; Zheng Bo; Zhou Ying [West China School of Public Health, Sichuan University, Chengdu, 610041 (China)

    2006-01-01

    A flow injection-CCD diode array detection spectrophotometry with partial least squares (PLS) program for simultaneous determination of iron, copper and cobalt in food samples has been established. The method was based on the chromogenic reaction of the three metal ions and 2- (5-Bromo-2-pyridylazo)-5-diethylaminophenol, 5-Br-PADAP in acetic acid - sodium acetate buffer solution (pH5) with Triton X-100 and ascorbic acid. The overlapped spectra of the colored complexes were collected by charge-coupled device (CCD) - diode array detector and the multi-wavelength absorbance data was processed using partial least squares (PLS) algorithm. Optimum reaction conditions and parameters of flow injection analysis were investigated. The samples of tea, sesame, laver, millet, cornmeal, mung bean and soybean powder were determined by the proposed method. The average recoveries of spiked samples were 91.80%{approx}100.9% for Iron, 92.50%{approx}108.0% for Copper, 93.00%{approx}110.5% for Cobalt, respectively with relative standard deviation (R.S.D) of 1.1%{approx}12.1%. The sampling rate is 45 samples h{sup -1}. The determination results of the food samples were in good agreement between the proposed method and ICP-AES.

  8. Simultaneous Determination of Iron, Copper and Cobalt in Food Samples by CCD-diode Array Detection-Flow Injection Analysis with Partial Least Squares Calibration Model

    Science.gov (United States)

    Mi, Jiaping; Li, Yuanqian; Zhou, Xiaoli; Zheng, Bo; Zhou, Ying

    2006-01-01

    A flow injection-CCD diode array detection spectrophotometry with partial least squares (PLS) program for simultaneous determination of iron, copper and cobalt in food samples has been established. The method was based on the chromogenic reaction of the three metal ions and 2- (5-Bromo-2-pyridylazo)-5-diethylaminophenol, 5-Br-PADAP in acetic acid - sodium acetate buffer solution (pH5) with Triton X-100 and ascorbic acid. The overlapped spectra of the colored complexes were collected by charge-coupled device (CCD) - diode array detector and the multi-wavelength absorbance data was processed using partial least squares (PLS) algorithm. Optimum reaction conditions and parameters of flow injection analysis were investigated. The samples of tea, sesame, laver, millet, cornmeal, mung bean and soybean powder were determined by the proposed method. The average recoveries of spiked samples were 91.80%~100.9% for Iron, 92.50%~108.0% for Copper, 93.00%~110.5% for Cobalt, respectively with relative standard deviation (R.S.D) of 1.1%~12.1%. The sampling rate is 45 samples h-1. The determination results of the food samples were in good agreement between the proposed method and ICP-AES.

  9. Program to Research Laser-Driven Thermionic Electron Sources for Free Electron Lasers.

    Science.gov (United States)

    1988-01-01

    by sinal I lengths of coaxial cable. With the ’. corresponding charge to the diode also reduced, a series of temporall y sho rter -Ioctron pulse-s was...e combination of approximately 1.6 eV. With the Nd:glass laser beam pulse heating the cathode " and the charge supplied by 0.5/ F capacitor, a series ...available charge stored in the h-arg ing ’apar i tor. A series of experiments was performed wilh lowetr capacitances of sevoral tens of picofarads furnished

  10. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ{sub b} vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ{sub b,mean} assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact.

  11. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    International Nuclear Information System (INIS)

    Venter, A.; Murape, D.M.; Botha, J.R.; Auret, F.D.

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ b vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ b,mean assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact

  12. Growth and characterization of Ag/n-ZnO/p-Si/Al heterojunction diode by sol–gel spin technique

    International Nuclear Information System (INIS)

    Keskenler, E.F.; Tomakin, M.; Doğan, S.; Turgut, G.; Aydın, S.; Duman, S.; Gürbulak, B.

    2013-01-01

    Highlights: ► Ag/n-ZnO/p-Si/Al heterojunction diode was grown via sol–gel technique. ► The characterization of ZnO material was investigated. ► The heterojunction structure showed a rectification behavior. ► Ideality factor and barrier height were found to be 2.03 and 0.71 eV, respectively. - Abstract: Polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol–gel method. X-ray diffraction study showed that the texture of the film is hexagonal with a strong (0 0 2) preferred direction. Scanning electron microscope image of ZnO showed that the obtained ZnO thin films had more porous character. High purity vacuum evaporated silver (Ag) and aluminum (Al) metals were used to make Ohmic contacts to the n-ZnO/p-Si heterojunction structure. The electrical properties of Ag/n-ZnO/p-Si/Al diode were investigated by using current–voltage measurements. Ag/n-ZnO/p-Si/Al heterojunction diode showed a rectification behavior, and its ideality factor and barrier height values were found to be 2.03 and 0.71 eV by applying a thermionic emission theory, respectively. The values of series resistance from dV/d (ln I) versus I and H(I) versus I curves were found to be 42.1 and 198.3 Ω, respectively.

  13. Characteristic of laser diode beam propagation through a collimating lens.

    Science.gov (United States)

    Xu, Qiang; Han, Yiping; Cui, Zhiwei

    2010-01-20

    A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

  14. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  15. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  16. Temperature dependence of photon-enhanced thermionic emission from GaAs surface with nonequilibrium Cs overlayers

    Energy Technology Data Exchange (ETDEWEB)

    Zhuravlev, A.G. [Rzhanov Institute of Semiconductor Physics, Pr. Lavrentieva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation); Alperovich, V.L., E-mail: alper@isp.nsc.ru [Rzhanov Institute of Semiconductor Physics, Pr. Lavrentieva, 13, 630090 Novosibirsk (Russian Federation); Novosibirsk State University, Pirogova, 2, 630090 Novosibirsk (Russian Federation)

    2017-02-15

    Highlights: • Electronic properties of Cs/GaAs surface are studied at elevated temperatures. • Heating to ∼100 °C strongly affects photoemission current and surface band bending. • For θ < 0.4 ML photoemission current relaxation is due to band bending. • A spectral proof of the PETE process is obtained at Cs/GaAs thermal cycling. - Abstract: The temperature influence on the Cs/GaAs surface electronic properties, which determine the photon-enhanced thermionic emission (PETE), is studied. It was found that heating to moderate temperatures of about 100 °C leads to substantial changes in the magnitude and shape of Cs coverage dependences of photoemission current and surface band bending, along with the changes of relaxation kinetics after Cs deposition. A spectral proof of the PETE process is obtained under thermal cycling of the Cs/GaAs surface with 0.45 monolayer (ML) of Cs.

  17. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  18. Evaluation Of Silicon Diodes As IN-SITU Cryogenic Field Emission Detectors For SRF Cavity Development

    International Nuclear Information System (INIS)

    Palczewski, Ari; Geng, Rongli

    2012-01-01

    We performed in-situ cryogenic testing of four silicon diodes as possible candidates for field emission (FE) monitors of superconducting radio frequency (SRF) cavities during qualification testing and in accelerator cryo-modules. We evaluated diodes from 2 companies - from Hamamatsu corporation model S1223-01; and from OSI Optoelectronics models OSD35-LR-A, XUV-50C, and FIL-UV20. The measurements were done by placing the diodes in superfluid liquid helium near the top of a field emitting 9-cell cavity during its vertical test. For each diode, we will discuss their viability as a 2K cryogenic detector for FE mapping of SRF cavities and the directionality of S1223-01 in such environments. We will also present calibration curves between the diodes and JLab's standard radiation detector placed above the Dewar's top plate.

  19. Temperature dependent current-voltage characteristics of Au/n-Si Schottky barrier diodes and the effect of transition metal oxides as an interface layer

    Science.gov (United States)

    Mahato, Somnath; Puigdollers, Joaquim

    2018-02-01

    Temperature dependent current-voltage (I‒V) characteristics of Au/n-type silicon (n-Si) Schottky barrier diodes have been investigated. Three transition metal oxides (TMO) are used as an interface layer between gold and silicon. The basic Schottky diode parameters such as ideality factor (n), barrier height (ϕb 0) and series resistance (Rs) are calculated and successfully explained by the thermionic emission (TE) theory. It has been found that ideality factor decreased and barrier height increased with increased of temperature. The conventional Richardson plot of ln(I0/T2) vs. 1000/T is determined the activation energy (Ea) and Richardson constant (A*). Whereas value of 'A*' is much smaller than the known theoretical value of n-type Si. The temperature dependent I-V characteristics obtained the mean value of barrier height (ϕb 0 bar) and standard deviation (σs) from the linear plot of ϕap vs. 1000/T. From the modified Richardson plot of ln(I0/T2) ˗ (qσ)2/2(kT)2 vs. 1000/T gives Richardson constant and homogeneous barrier height of Schottky diodes. Main observation in this present work is the barrier height and ideality factor shows a considerable change but the series resistance value exhibits negligible change due to TMO as an interface layer.

  20. Spectral perturbations from silicon diode detector encapsulation and shielding in photon fields.

    Science.gov (United States)

    Eklund, Karin; Ahnesjö, Anders

    2010-11-01

    Silicon diodes are widely used as detectors for relative dose measurements in radiotherapy. The common manufacturing practice is to encapsulate the diodes in plastic for protection and to facilitate mounting in scanning devices. Diodes intended for use in photon fields commonly also have a shield of a high atomic number material (usually tungsten) integrated into the encapsulation to selectively absorb low-energy photons to which silicon diodes would otherwise over-response. However, new response models based on cavity theories and spectra calculations have been proposed for direct correction of the readout from unshielded (e.g., "electron") diodes used in photon fields. This raises the question whether it is correct to assume that the spectrum in a water phantom at the location of the detector cavity is not perturbed by the detector encapsulation materials. The aim of this work is to investigate the spectral effects of typical encapsulations, including shielding, used for clinical diodes. The effects of detector encapsulation of an unshielded and a shielded commercial diode on the spectra at the detector cavity location are studied through Monte Carlo simulations with PENELOPE-2005. Variance reduction based on correlated sampling is applied to reduce the CPU time needed for the simulations. The use of correlated sampling is found to be efficient and to not introduce any significant bias to the results. Compared to reference spectra calculated in water, the encapsulation for an unshielded diode is demonstrated to not perturb the spectrum, while a tungsten shielded diode caused not only the desired decrease in low-energy scattered photons but also a large increase of the primary electron fluence. Measurements with a shielded diode in a 6 MV photon beam proved that the shielding does not completely remove the field-size dependence of the detector response caused by the over-response from low-energy photons. Response factors of a properly corrected unshielded diode

  1. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  2. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  3. Temperature issues with white laser diodes, calculation and approach for new packages

    Science.gov (United States)

    Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

    2015-01-01

    Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

  4. Distribution of barrier heights in Au/porous GaAs Schottky diodes from current-voltage-temperature measurements

    International Nuclear Information System (INIS)

    Harrabi, Z.; Jomni, S.; Beji, L.; Bouazizi, A.

    2010-01-01

    In this work, we have studied the electrical characteristics of the Au/porous GaAs/p-GaAs diodes as a function of temperature. The (I-V)-T characteristics are analysed on the basis of thermionic emission (TE). The temperature behaviour of the barrier height potential and the ideality factor demonstrate that the current transport is controlled by the thermionic emission mechanism (TE) with Gaussian distribution of the barrier height potential. The Gaussian distribution of barrier height potential is due to barrier inhomogeneity, which is suggested to be caused by the presence of the porous GaAs interfacial layer. The experimental (I-V)-T characteristics of the Au/porous GaAs/p-GaAs heterostructure demonstrate the presence of a two Gaussian distributions having a mean barrier height potential Φ b0 -bar of about 0.67 and 0.54 V and standard deviations σ s 2 of about 8.4x10 -3 and 4.2x10 -3 V, respectively. Using the obtained standard deviation, the obtained Richardson constant value is in accordance with the well documented value (79.2 A cm -2 K -2 ) of p-type GaAs and the mean barrier height Φ b0 -bar is closed to the band gap of GaAs. The obtained values prove that the I-V-T characteristics of Au/porous GaAs/p-GaAs heterostructure are governed by the TE mechanism theory with two Gaussian distributions of barrier heights.

  5. Subpicosecond gain dynamics in GaAlAs laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kesler, M.P.; Ippen, E.P.

    1987-11-30

    Ultrafast gain dynamics in GaAlAs diode amplifiers have been studied using 100 fs optical pulses. Pulse propagation through the amplifier resulted in temporal broadening and pulse shaping due to both gain saturation and material dispersion. Pump-probe experiments indicate the presence of two processes contributing to the gain dynamics but give no evidence of spectral hole burning. A dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of our results on the dynamic response of laser diodes are discussed.

  6. Degradation of light emitting diodes: a proposed methodology

    International Nuclear Information System (INIS)

    Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

    2011-01-01

    Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

  7. Towards high frequency heterojunction transistors: Electrical characterization of N-doped amorphous silicon-graphene diodes

    Science.gov (United States)

    Strobel, C.; Chavarin, C. A.; Kitzmann, J.; Lupina, G.; Wenger, Ch.; Albert, M.; Bartha, J. W.

    2017-06-01

    N-type doped amorphous hydrogenated silicon (a-Si:H) is deposited on top of graphene (Gr) by means of very high frequency (VHF) and radio frequency plasma-enhanced chemical vapor deposition (PECVD). In order to preserve the structural integrity of the monolayer graphene, a plasma excitation frequency of 140 MHz was successfully applied during the a-Si:H VHF-deposition. Raman spectroscopy results indicate the absence of a defect peak in the graphene spectrum after the VHF-PECVD of (n)-a-Si:H. The diode junction between (n)-a-Si:H and graphene was characterized using temperature dependent current-voltage (IV) and capacitance-voltage measurements, respectively. We demonstrate that the current at the (n)-a-Si:H-graphene interface is dominated by thermionic emission and recombination in the space charge region. The Schottky barrier height (qΦB), derived by temperature dependent IV-characteristics, is about 0.49 eV. The junction properties strongly depend on the applied deposition method of (n)-a-Si:H with a clear advantage of the VHF(140 MHz)-technology. We have demonstrated that (n)-a-Si:H-graphene junctions are a promising technology approach for high frequency heterojunction transistors.

  8. Research on the electrical characteristics of the Pt/CdS Schottky diode

    Science.gov (United States)

    Ding, Jia-xin; Zhang, Xiang-feng; Yao, Guansheng

    2013-08-01

    With the development of technology, the demand for semiconductor ultraviolet detector is increasing day by day. Compared with the traditional infrared detector in missile guidance, ultraviolet/infrared dual-color detection can significantly improve the anti-interference ability of the missile. According to the need of missile guidance and other areas of the application of ultraviolet detector, the paper introduces a manufacture of the CdS Schottky barrier ultraviolet detector. By using the radio frequency magnetron sputtering technology, a Pt thin film layer is sputtered on CdS basement to form a Schottky contact firstly. Then the indium ohmic contact electrode is fabricated by thermal evaporation method, and eventually a Pt/CdS/In Schottky diode is formed. The I-V characteristic of the device was tested at room temperature, its zero bias current and open circuit voltage is -0.578nA and 130mV, respectively. Test results show that the the Schottky contact has been formed between Pt and CdS. The device has good rectifying characteristics. According to the thermionic emission theory, the I-V curve fitting analysis of the device was studied under the condition of small voltage. The ideality factor and Schottky barrier height is 1.89 and 0.61eV, respectively. The normalized spectral responsivity at zero bias has been tested. The device has peak responsivity at 500nm, and it cutoff at 510nm.

  9. Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

    Science.gov (United States)

    Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

    2017-07-01

    This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

  10. Time-dependent beam focusing at the DARHT-II injector diode

    International Nuclear Information System (INIS)

    Eylon, S.; Henestroza, E.; Fawley, W.; Yu, S.

    1999-01-01

    The injector for the second axis of the Dual-Axis Radiographic Hydrotest Facility (DARHT) is being designed and constructed at LBNL. The injector consists of a single gap diode extracting 2(micro)s, 2kA, 3.2 MeV electron beam from a 6.5 inches diameter thermionic dispenser cathode. The injector is powered through a ceramic column by a Marx generator. We also investigated the possibility of extracting a beam current of 4 kA. The focusing system for the electron beam consists of a Pierce electrostatic focusing electrode at the cathode and three solenoidal focusing magnets positioned between the anode and induction accelerator input. The off-energy components (beam-head) during the 400 ns energy rise time are overfocused, leading to beam envelope mismatch and growth resulting in the possibility of beam hitting the accelerator tube walls. The anode focusing magnets can be tuned to avoid the beam spill in the 2kA case. To allow beam-head control for the 4kA case we are considering the introduction of time-varying magnetic focusing field along the accelerator axis generated by a single-loop solenoid magnet positioned in the anode beam tube. We will present the beam-head dynamics calculations as well as the solenoid design and preliminary feasibility test results

  11. High-Performance Schottky Diode Gas Sensor Based on the Heterojunction of Three-Dimensional Nanohybrids of Reduced Graphene Oxide-Vertical ZnO Nanorods on an AlGaN/GaN Layer.

    Science.gov (United States)

    Minh Triet, Nguyen; Thai Duy, Le; Hwang, Byeong-Ung; Hanif, Adeela; Siddiqui, Saqib; Park, Kyung-Ho; Cho, Chu-Young; Lee, Nae-Eung

    2017-09-13

    A Schottky diode based on a heterojunction of three-dimensional (3D) nanohybrid materials, formed by hybridizing reduced graphene oxide (RGO) with epitaxial vertical zinc oxide nanorods (ZnO NRs) and Al 0.27 GaN 0.73 (∼25 nm)/GaN is presented as a new class of high-performance chemical sensors. The RGO nanosheet layer coated on the ZnO NRs enables the formation of a direct Schottky contact with the AlGaN layer. The sensing results of the Schottky diode with respect to NO 2 , SO 2 , and HCHO gases exhibit high sensitivity (0.88-1.88 ppm -1 ), fast response (∼2 min), and good reproducibility down to 120 ppb concentration levels at room temperature. The sensing mechanism of the Schottky diode can be explained by the effective modulation of the reverse saturation current due to the change in thermionic emission carrier transport caused by ultrasensitive changes in the Schottky barrier of a van der Waals heterostructure between RGO and AlGaN layers upon interaction with gas molecules. Advances in the design of a Schottky diode gas sensor based on the heterojunction of high-mobility two-dimensional electron gas channel and highly responsive 3D-engineered sensing nanomaterials have potential not only for the enhancement of sensitivity and selectivity but also for improving operation capability at room temperature.

  12. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  13. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  14. Diode laser prostatectomy (VLAP): initial canine evaluation

    Science.gov (United States)

    Kopchok, George E.; Verbin, Chris; Ayres, Bruce; Peng, Shi-Kaung; White, Rodney A.

    1995-05-01

    This study evaluated the acute and chronic effects of diode laser (960 nm) prostatectomy using a Prolase II fiber in a canine model (n equals 5). The laser fiber consists of a 1000 um quartz fiber which reflects a cone of laser energy, at 45 degree(s) to the axis of the fiber, into the prostatic urethra (Visual Laser Ablation of Prostate). Perineal access was used to guide a 15.5 Fr cystoscope to the level of the prostate. Under visual guidance and continual saline irrigation, 60 watts of laser power was delivered for 60 seconds at 3, 9, and 12 o'clock and 30 seconds at the 6 o'clock (posterior) positions for a total energy fluence of 12,600 J. One prostate received an additional 60 second exposure at 3 and 9 o'clock for a total fluence of 19,800 J. The prostates were evaluated at one day (n equals 1) and 8 weeks (n equals 4). The histopathology of laser effects at one day show areas of necrosis with loss of glandular structures and stromal edema. Surrounding this area was a zone of degenerative glandular structures extending up to 17.5 mm (cross sectional diameter). The histopathology of the 8 week laser treated animals demonstrated dilated prostatic urethras with maximum cross- sectional diameter of 23.4 mm (mean equals 18.5 +/- 3.9 mm). This study demonstrates the effectiveness of diode laser energy for prostatic tissue coagulation and eventual sloughing. The results also demonstrate the safety of diode laser energy, with similar tissue response as seen with Nd:YAG laser, for laser prostatectomy.

  15. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  16. Injection of holes at indium tin oxide/dendrimer interface: An explanation with new theory of thermionic emission at metal/organic interfaces

    International Nuclear Information System (INIS)

    Peng Yingquan; Lu Feiping

    2006-01-01

    The traditional theory of thermionic emission at metal/inorganic crystalline semiconductor interfaces is no longer applicable for the interface between a metal and an organic semiconductor. Under the assumption of thermalization of hot carriers in the organic semiconductor near the interface, a theory for thermionic emission of charge carriers at metal/organic semiconductor interfaces is developed. This theory is used to explain the experimental result from Samuel group [J.P.J. Markham, D.W. Samuel, S.-C. Lo, P.L. Burn, M. Weiter, H. Baessler, J. Appl. Phys. 95 (2004) 438] for the injection of holes from indium tin oxide into the dendrimer based on fac-tris(2-phenylpyridyl) iridium(III)

  17. Development of a thermionic magnicon amplifier at 11.4 GHz. Technical progress report, 16 May 1994--31 December 1995

    International Nuclear Information System (INIS)

    Gold, S.H.; Fliflet, A.W.; Manheimer, W.M.

    1995-01-01

    This is a progress report on a four-year research program entitled 'Development of a Thermionic Magnicon Amplifier at 11.4 GHz', which is under way in the Plasma Physics Division of the Naval Research Laboratory (NRL) under Interagency Agreement DE-AI02-94ER40681. This report covers the period 16 May 1994 through 31 December 1995. The magnicon is an advanced microwave tube with potential application to future high gradient linear accelerators such as TeV colliders. Under this program, NRL plans to build and test a thermionic magnicon amplifier tube powered by a 500 kV, 200 A, 10 Hz modulator with a 1 μsec pulse. However, the experiments that were carried out during the period covered by this report were driven by a single-shot Marx generator, and the electron beam was produced from a graphite plasma cathode

  18. Hybrid simulation of electrode plasmas in high-power diodes

    International Nuclear Information System (INIS)

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  19. Anode plasma dynamics in the self-magnetic-pinch diode

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2011-02-01

    Full Text Available The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. In high-power operation, the beam electrons desorb contaminants from the anode surface from which positive ions are drawn to the cathode. The counterstreaming electrons and ions establish an equilibrium current. It has long been recognized, however, that expanding electrode plasmas can disrupt this equilibrium and cause rapid reduction of the diode impedance and the radiation pulse. Recently developed numerical techniques, which enable simultaneous modeling of particle currents with 10^{13}  cm^{-3} densities to plasmas of near solid density, are applied to a model of the self-magnetic-pinch diode which includes the formation and evolution of anode surface plasmas. Two mechanisms are shown to cause rapid impedance loss, anode plasma expansion into the anode-cathode (A-K gap, and increased ion space-charge near the cathode surface. The former mechanism dominates for shorter A-K gaps, while the latter dominates for longer gaps. Model results qualitatively reproduce the time-dependent impedances measured for this diode.

  20. Self-excited current oscillations in a resonant tunneling diode described by a model based on the Caldeira–Leggett Hamiltonian

    International Nuclear Information System (INIS)

    Sakurai, Atsunori; Tanimura, Yoshitaka

    2014-01-01

    The quantum dissipative dynamics of a tunneling process through double barrier structures is investigated on the basis of non-perturbative and non-Markovian treatment. We employ a Caldeira–Leggett Hamiltonian with an effective potential calculated self-consistently, accounting for the electron distribution. With this Hamiltonian, we use the reduced hierarchy equations of motion in the Wigner space representation to study non-Markovian and non-perturbative thermal effects at finite temperature in a rigorous manner. We study current variation in time and the current–voltage (I–V ) relation of the resonant tunneling diode for several widths of the contact region, which consists of doped GaAs. Hysteresis and both single and double plateau-like behavior are observed in the negative differential resistance (NDR) region. While all of the current oscillations decay in time in the NDR region in the case of a strong system–bath coupling, there exist self-excited high-frequency current oscillations in some parts of the plateau in the NDR region in the case of weak coupling. We find that the effective potential in the oscillating case possesses a basin-like form on the emitter side (emitter basin) and that the current oscillation results from tunneling between the emitter basin and the quantum well in the barriers. We find two distinct types of current oscillations, with large and small oscillation amplitudes, respectively. These two types of oscillation appear differently in the Wigner space, with one exhibiting tornado-like motion and the other exhibiting a two piston engine-like motion. (paper)

  1. Responses and mechanisms of positive electron affinity molecules in the N2 mode of the thermionic ionization detector and the electron-capture detector

    International Nuclear Information System (INIS)

    Jones, C.S.

    1989-01-01

    Very little knowledge has been acquired in the past on the mechanistic pathway by which molecules respond in the N 2 mode of the thermionic ionization detector. An attempt is made here to elucidate the response mechanism of the detector. The basic response mechanisms are known for the electron capture detector, and an attempt is made to identify the certain mechanism by which selected molecules respond. The resonance electron capture rate constant has been believed to be temperature independent, and investigations of the temperature dependence of electron capture responses are presented. Mechanisms for the N 2 mode of the thermionic ionization detector have been proposed by examining the detector response to positive electron affinity molecules and by measurement of the ions produced by the detector. Electron capture mechanisms for selected molecules have been proposed by examining their temperature dependent responses in the electron capture detector and negative ion mass spectra of the samples. In studies of the resonance electron capture rate constant, the relative responses of selected positive electron affinity molecules and their temperature dependent responses were investigated. Positive electron affinity did not guarantee large responses in the N 2 mode thermionic ionization detector. High mass ions were measured following ionization of samples in the detector. Responses in the electron capture detector varied with temperature and electron affinity

  2. Fermi level splitting and thermionic current improvement in low-dimensional multi-quantum-well (MQW) p-i-n structures

    International Nuclear Information System (INIS)

    Varonides, Argyrios C.

    2006-01-01

    Photo-excitation and subsequent thermionic currents are essential components of photo-excited carrier transport in multi-quantum-well photovoltaic (hetero-PV) structures. p-i-n multi-quantum structures are useful probes for a better understanding of PV device properties. Illumination of the intrinsic region of p-i-n multi-structures causes carrier trapping in any of the quantum wells, and subsequent carrier recombination or thermal escape is possible. At the vicinity of a quantum well, we find that the (quasi) Fermi levels undergo an upward split by a small, but non-negligible, energy amount ΔE F in the order of 12 meV. We conclude this fact by comparing the photo-excited carriers trapped in a quantum well, under illumination, to the carrier concentrations under dark. Based on such a prediction, we subsequently relate thermionic current density dependence on Fermi level splitting, concluding that excess thermal currents may increase by a factor of the order of 2. We conclude that illumination causes (a) Fermi level separation and (b) an apparent increase in thermionic currents

  3. Development of a high temperature solar receiver for high-efficient thermionic conversion systems; Fukugo netsuden henkan system yo chokoon taiyo junetsuki no kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    Umeoka, T; Naito, H; Yugami, H; Arashi, H [Tohoku University, Sendai (Japan). Faculty of Engineering

    1996-10-27

    For thermionic conversion systems (TIC) using concentrated sunlight as heat source, the newly developed solar receiver was tested. Concentrated sunlight aims at the inner surface of the cavity type solar receiver. The emitter of TIC installed in the rear of the solar receiver is uniformly heated over 1700K by thermal radiation from the rear of the solar receiver, emitting thermion. Electric power is generated by collecting the thermion by collector. Mo is used as emitter material, however, because of poor heat absorption of Mo, high-absorptive TiC is used for heat absorption surface to heat Mo by thermal conduction from high-temperature TiC. Functionally gradient material (FGM) with an intermediate layer of gradient TiC/Mo ratios between TiC and Mo is used as emitter material. The emitter is thus uniformly heated at high temperatures of 1723{plus_minus}12K. As a result, the developed solar receiver is applicable to heat the emitter of TIC. Heat flux measurement at the graphite cavity clarified that cavity temperature of as high as 1780K and heat flow of 50W/cm{sup 2} are obtained at 4.7kW in input. 6 figs.

  4. space vector pulse width modulation of a multi-level diode clamped

    African Journals Online (AJOL)

    ES Obe

    step by step development of MATLAB /SIMULINK modeling of the space vector ..... Pulse Width Mod. of Multi-Level Diode Clamped Converter 119 powergui. Discrete, .... Load. Figure 22: Block diagram of the three level DCC design. 3 LEVEL ...

  5. Space Vector Pulse Width Modulation of a Multi-Level Diode ...

    African Journals Online (AJOL)

    Space Vector Pulse Width Modulation of a Multi-Level Diode Clamped ... of MATLAB /SIMULINK modeling of the space vector pulse-width modulation and the ... two adjacent active vectors in determining the switching process of the multilevel ...

  6. Electron beam diodes using ferroelectric cathodes

    International Nuclear Information System (INIS)

    Ivers, J.D.; Schaechter, L.; Nation, J.A.; Kerslick, G.S.

    1993-01-01

    A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm 2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

  7. Processes governing pinch formation in diodes

    International Nuclear Information System (INIS)

    Blaugrund, A.E.; Cooperstein, G.; Goldstein, S.A.

    1975-01-01

    The process of pinch formation in large aspect ratio diodes has been studied by means of streak photography and time-resolved x-ray detectors. A tight pinch is formed at the anode center by a collapsing thin hollow electron beam. The collapse velocity depends, among other things, on the type of material in the top 1 μm layer of the anode. In a tentative model it is assumed that an anode plasma is at least partially created from gases released from the surface layer of the anode by the heating action of the beam. These gases are ionized by primary, backscattered, and secondary electrons. Ions emitted from this plasma modify the electron trajectories in the diode leading to a radial collapse of the hollow electron beam. The observed monotonic dependence of the collapse velocity on the atomic number of the anode material can be explained by the smooth dependence on Z of both the specific heat and the electron backscatter coefficient. In the case of high-Z anodes the ion expansion time appears to be the factor limiting the collapse velocity. Detailed experimental data are presented

  8. Control electron beam oscillation regimes in Pierce diode with overcritical current

    International Nuclear Information System (INIS)

    Rempen, I.S.; Khramov, A.E.

    2001-01-01

    The effect of the delayed feedback on the complex oscillation regimes in the electron flux with the overcritical current in the Pierce diode is studied. The possibility of controlling the oscillation regimes through changing the feedback parameters is shown. The finite-dimensional model, describing the behavior of the electron flux in the Pierce diode hydrodynamic model, is constructed. Its behavior under the effect of the delayed feedback is studied [ru

  9. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  10. Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

    KAUST Repository

    Wang, Song

    2017-05-10

    Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young\\'s moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell–Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

  11. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  12. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  13. Common voltage eliminating of SVM diode clamping three-level inverter connected to grid

    DEFF Research Database (Denmark)

    Guo, Yougui; Zeng, Ping; Zhu, Jieqiong

    2011-01-01

    A novel method of common voltage eliminating is put forward for SVM diode clamping three-level inverter connected to grid by calculation of common voltage of its various switching states. PLECS is used to model this three-level inverter connected to grid and good results are obtained. First...... analysis of common mode voltage for switching states of diode clamping 3-level inverter is given in detail. Second the common mode voltage eliminating control strategy of SVM is described for diode clamping three-level inverter. Third, PLECS is briefly introduced. Fourth, the modeling of diode clamping...... three-level inverter is presented with PLECS. Finally, a series of simulations are carried out. The simulation results tell us PLECS is a very powerful tool to real power circuits modeling. They have also verified that proposed common mode voltage eliminating control strategy of SVM is feasible...

  14. Nano-crystalline p-ZnGa{sub 2}Te{sub 4}/n-Si as a new heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Sakr, G.B. [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Fouad, S.S. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yahia, I.S., E-mail: dr_isyahia@yahoo.com [Nano-Science Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Semicondcutor Lab., Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha (Saudi Arabia); Abdel Basset, D.M. [Department of Physics, Faculty of Education, Ain Shams University, Roxy, Cairo (Egypt); Yakuphanoglu, F. [Physics Department, Faculty of Science and Arts, Firat University, Elazig (Turkey)

    2013-02-15

    Graphical abstract: Display Omitted Highlights: ► ZnGa{sub 2}Te{sub 4}/Si thin film was prepared by thermal evaporation technique. ► XRD and AFM graphs support the nano-crystalline of the studied device. ► Dark current–voltage characteristics of the heterojunction diode were investigated. ► Electrical parameters and conduction mechanism were determined. ► Conduction mechanisms were controlled by TE, SCLC and TCLC. -- Abstract: In this communication, ZnGa{sub 2}Te{sub 4} thin film was prepared by thermal evaporation technique on n-Si substrate. P-ZnGa{sub 2}Te{sub 4}/n-Si heterojunction diode was fabricated. The structure of ZnGa{sub 2}Te{sub 4} thin film was checked by XRD pattern and confirmed by AFM micrographs. The dark current–voltage characteristics of the heterojunction diode were investigated to determine the electrical parameters and conduction mechanism as a function of forward and reverse biasing conditions in the range (−10 V to 10 V) at temperature interval (303–423 K). The conduction mechanism was controlled by thermionic emission, space charge limited (SCLC) and trap-charge limited current (TCLC) mechanisms. The basic parameters such as the series resistance R{sub s}, the shunt resistance R{sub sh}, the ideality factor n and the barrier height φ{sub b} of the diode, the total density of trap states N{sub 0} and the exponential trapping distribution P{sub o} were determined. The obtained results showed that ZnGa{sub 2}Te{sub 4} is a good candidate for the applications of electronic devices.

  15. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  16. Thermometric characteristics of silicon semiconductor diodes

    International Nuclear Information System (INIS)

    Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

    1975-01-01

    To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

  17. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  18. Fabrication and electrical characteristics for MIS diode by utilizing TiO2 ceramics

    International Nuclear Information System (INIS)

    Bae, S.H.

    1981-01-01

    Metal insulator semiconductor diodes were made by utilizing TiO 2 ceramics. Tunnel field emission is here proposed as a model for rectification in TiO 2 diode. Measurements of junction depth show very satisfactory agreement with value obtained from the Richardson plot, thus serving as additional supporting evidence of field emission in TiO 2 ceramic. The measured junction area exceeds by a factor of 10 6 the value expected by assuming field emission. The Richardson plot shows a deviation from the emission theory at low voltage, which is probably due to leakage currents which are present in MIS rutile diode. (author)

  19. Investigation of barium-calcium aluminate process to manufacture and characterize impregnated thermionic cathode for power microwave devices

    International Nuclear Information System (INIS)

    Higashi, Cristiane

    2006-01-01

    In the present work it is described the barium calcium aluminate manufacture processes employed to produce impregnated cathodes to be used in a traveling-wave tube (TWT). The cathodes were developed using a tungsten body impregnated with barium and calcium aluminate with a 5:3:2 proportion (molar). Three different processes were investigated to obtain this material: solid-state reaction, precipitation and crystallization. Thermal analysis, thermogravimetry specifically, supported to determine an adequate preparation procedure (taking into account temperature, time and pyrolysis atmosphere). It was verified that the crystallization showed a better result when compared to those investigated (solid-state reaction and precipitation techniques - formation temperature is about 1000 deg C in hydrogen atmosphere), whereas it presented the lower formation temperature (800 deg C) in oxidizing atmosphere (O 2 ). It was used the practical work function distribution theory (PWFD) of Miram to characterize thermionic impregnated cathode. The PWFD curves were used to characterize the barium-calcium aluminate cathode. PWFD curves shown that the aluminate cathode work function is about 2,00 eV. (author)

  20. A PVTC system integrating photon-enhanced thermionic emission and methane reforming for efficient solar power generation

    Institute of Scientific and Technical Information of China (English)

    Wenjia Li; Hongsheng Wang; Yong Hao

    2017-01-01

    A new photovoltaic-thermochemical (PVTC) conceptual system integrating photon-enhanced thermionic emission (PETE) and methane steam reforming is proposed.Major novelty of the system lies in its potential adaptivity to primary fuels (e.g.methane) and high efficiencies of photovoltaic and thermochemical power generation,both of which result from its operation at much elevated temperatures (700-1000 ℃)compared with conventional photovoltaic-thermal (PVT) systems.Analysis shows that an overall power generation efficiency of 45.3% and a net solar-to-electric efficiency of 39.1% could be reached at an operating temperature of 750 ℃,after considering major losses during solar energy capture and conversion processes.The system is also featured by high solar share (37%) in the total power output,as well as high energy storage capability and very low CO2 emissions,both enabled by the integration of methane reforming with photovoltaic generation at high temperatures.

  1. Study of beam transverse properties of a thermionic electron gun for application to a compact THz free electron laser

    International Nuclear Information System (INIS)

    Hu, Tongning; Qin, Bin; Tan, Ping; Chen, Qushan; Yang, Lei; Pei, Yuanji; Li, Ji

    2014-01-01

    A novel thermionic electron gun adopted for use in a high power THz free electron laser (FEL) is proposed in this paper. By optimization of the structural and radiofrequency (RF) parameters, the physical design of the gun is performed using dynamic calculations. Velocity bunching is used to minimize the bunch's energy spread, and the dynamic calculation results indicate that high quality beams can be provided. The transverse properties of the beams generated by the gun are also analyzed. The novel RF focusing effects of the resonance cavity are investigated precisely and are used to establish emittance compensation, which enables the injector length to be reduced. In addition, the causes of the extrema of the beam radius and the normalized transverse emittance are analyzed and interpreted, respectively, and slice simulations are performed to illustrate how the RF focusing varies along the bunch length and to determine the effects of that variation on the emittance compensation. Finally, by observation of the variations of the beam properties in the drift tube behind the electron gun, prospective assembly scenarios for the complete THz-FEL injector are discussed, and a joint-debugging process for the injector is implemented

  2. Development of high-current-density LAB6 thermionic emitters for a space-charge-limited electron gun

    International Nuclear Information System (INIS)

    Herniter, M.E.; Getty, W.D.

    1987-01-01

    An electron gun has been developed for investigation of high current density, space charge limited operation of a lenthanum hexaboride (LaB 6 ) thermionic cathode. The 2.8 cm 2 cathode disk is heated by electron bombardment from a tungsten filament. For LaB 6 cathode temperatures greater than 1600 0 C it has been found that evaporation from the LaB 6 causes an increase in the tungsten filament emission, leading to an instability in the bombardment heating system. This instability has been investigated and eliminated by using a graphite disk in place of the LaB 6 cathode or by shielding the filament from the LaB 6 cathode by placing the LaB 6 in a graphite cup and bombarding the cup. The graphite disk has been heated to 1755 0 C with 755 W of heating power, and the shielded LaB 6 cathode has been heated to 1695 0 C. This temperature range is required for emission current densities in the 30 Acm 2 range. It is believed that the evaporation of lanthanum lowers the tungsten work function. In electron-gun use, the LaB 6 cathode has been operated up to 6.7 Acm 2 at 36 kV. A 120 kV Marx generator has been built to allow operation up to 40 Acm 2

  3. Optimal thermionic energy conversion with established electrodes for high-temperature topping and process heating. [coal combustion product environments

    Science.gov (United States)

    Morris, J. F.

    1980-01-01

    Applied research-and-technology (ART) work reveals that optimal thermionic energy conversion (TEC) with approximately 1000 K to approximately 1100 K collectors is possible using well established tungsten electrodes. Such TEC with 1800 K emitters could approach 26.6% efficiency at 27.4 W/sq cm with approximately 1000 K collectors and 21.7% at 22.6 W/sq cm with approximately 1100 K collectors. These performances require 1.5 and 1.7 eV collector work functions (not the 1 eV ultimate) with nearly negligible interelectrode losses. Such collectors correspond to tungsten electrode systems in approximately 0.9 to approximately 6 torr cesium pressures with 1600 K to 1900 K emitters. Because higher heat-rejection temperatures for TEC allow greater collector work functions, interelectrode loss reduction becomes an increasingly important target for applications aimed at elevated temperatures. Studies of intragap modifications and new electrodes that will allow better electron emission and collection with lower cesium pressures are among the TEC-ART approaches to reduced interelectrode losses. These solutions will provide very effective TEC to serve directly in coal-combustion products for high-temperature topping and process heating. In turn this will help to use coal and to use it well.

  4. Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

    Directory of Open Access Journals (Sweden)

    Rodica Vladoiu

    2018-01-01

    Full Text Available Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA method. The influence of different substrates (glass, silicon wafers, and stainless steel on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM, Scanning Electron Microscopy (SEM, Atomic Force Microscopy (AFM, and TI 950 (Hysitron nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass (HC-Ag/Gl = 1.8 GPa was slightly lower than in the case of the C-Ag film deposited on a silicon substrate (HC-Ag/Si = 2.2 GPa. Also the apparent elastic modulus Eeff was lower for C-Ag/Gl sample (Eeff = 100 GPa than for C-Ag/Si (Eeff = 170 GPa, while the values for average roughness are Ra=2.9 nm (C-Ag/Si and Ra=10.6 (C-Ag/Gl. Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

  5. THz and Sub-THz Capabilities of a Table-Top Radiation Source Driven by an RF Thermionic Electron Gun

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, Alexei V.; Agustsson, R.; Boucher, S.; Campese, Tara; Chen, Y.C.; Hartzell, Josiah J.; Jocobson, B.T.; Murokh, A.; O' Shea, F.H.; Spranza, E.; Berg, W.; Borland, M.; Dooling, J. C.; Erwin, L.; Lindberg, R. R.; Pasky, S.J.; Sereno, N.; Sun, Y.; Zholents, A.

    2017-06-01

    Design features and experimental results are presented for a sub-mm wave source [1] based on APS RF thermionic electron gun. The setup includes compact alpha-magnet, quadrupoles, sub-mm-wave radiators, and THz optics. The sub-THz radiator is a planar, oversized structure with gratings. Source upgrade for generation frequencies above 1 THz is discussed. The THz radiator will use a short-period undulator having 1 T field amplitude, ~20 cm length, and integrated with a low-loss oversized waveguide. Both radiators are integrated with a miniature horn antenna and a small ~90°-degree in-vacuum bending magnet. The electron beamline is designed to operate different modes including conversion to a flat beam interacting efficiently with the radiator. The source can be used for cancer diagnostics, surface defectoscopy, and non-destructive testing. Sub-THz experiment demonstrated a good potential of a robust, table-top system for generation of a narrow bandwidth THz radiation. This setup can be considered as a prototype of a compact, laser-free, flexible source capable of generation of long trains of Sub-THz and THz pulses with repetition rates not available with laser-driven sources.

  6. High Intensity Organic Light-emitting Diodes

    Science.gov (United States)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  7. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  8. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  9. Electron collector and ion species experiments on the LION extractor ion diode

    International Nuclear Information System (INIS)

    Rondeau, G.; Greenly, J.B.; Hammer, D.A.; Horioka, K.; Meyerhofer, D.D.

    1987-01-01

    Studies of the effects of an electron collector on the electron flow in an ion diode and on diode impedance history are being done with an extractor geometry ion diode (B/sub r/ magnetic insulation field) on the LION accelerator (1.5 MV, 4Ω, 40 ns). The collector is a flux-penetrable metal protrusion on the inner radius of the anode that collects electrons. This device increases the diode operating impedance particularly during the later part of the pulse when the diode impedance collapses without the collector. In the present set of experiments, several thin wires are inserted into the anode and allowed to protrude a few millimeters into the A-K gap. These wires are damaged by the electron flow during the pulse and by measuring the length of the remaining wire, the distance of the electron layer from the anode can be inferred. The ion current density is also measured in three radial locations across the diode, giving a measure, through the Child-Langmuir law, of the effective gap spacing between the anode and the electron sheath. A simple model is proposed to account for the scaling of ion current density with the diode voltage observed in the experiment

  10. Kinetics of current formation in molecular diode

    International Nuclear Information System (INIS)

    Petrov, Eh.G.; Leonov, V.A.; Shevchenko, E.V.

    2012-01-01

    Based on the kinetic theory of election transfer in low-dimensional molecular systems, the formation of transient and stationary currents in a system 'electrode l-molecule-electrode 2' (molecular diode) is studied for different regimes of charge transmission. In the framework of the HOMO-LUMO molecular model, a situation is considered where the current formation is initiated either by molecule photoexcitation or by change of interelectrode voltage bias. It is found that the distant (tunnel) inelastic electron transfer plays a crucial role in changing molecular electronic states and, as a result, in generating transmission channels for hopping (sequential) and distant (direct) current components. The effect of inelastic tunneling is especially pronounced in the condition of resonant electron transmission.

  11. Interference phenomenon determines the color in an organic light emitting diode

    Science.gov (United States)

    Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

    1997-06-01

    We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

  12. Memory Applications Using Resonant Tunneling Diodes

    Science.gov (United States)

    Shieh, Ming-Huei

    Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

  13. Light ion source studies with a magnetically insulated extraction diode

    International Nuclear Information System (INIS)

    Struckman, C.K.

    1992-01-01

    Light ion sources are currently being studied to assess their ability to drive an inertial confinement fusion reactor. The author has produced a high purity, 1MV, 300A/cm 2 lithium beam using a 200cm 2 extraction geometry, magnetically insulated ion diode. The lithium source was an AC glow discharge cleaned, LiF/Al film active anode. The active anode plasma was formed after 50KA of current was shunted through the anode film for 20ns. The stoichiometry of the resulting ion beam was 65% Li + , 20% Al +2 , and 15% H + . Without the glow discharge cleaning, the ion beam was over 55% hydrogen and only 20% Li + . At the time of the diode's design, extraction diodes were producing poor ion beams: their current efficiency was only 60-70%, and their extracted ion current was radially nonuniform. This diode was the first high efficiency extraction diode, and produced over 200KA of ions with 80-90% ion current efficiency. In addition, by varying the tilt of the applied magnetic field, it was possible to show that the ion current density could be made independent of radius. Since the author was unable to make a Li + beam with a passive anode, he installed an active anode that used an external current to vaporize a thin metal film on the anode surface. Poor beam purity was the most serious problem with active anodes. In order to remove impurities, especially the hydrogen contamination, the author cleaned the anodes with a glow discharge. Al film anodes were cleaned with a 110mA, 33W DC glow discharge, and the LiF/Al film anodes were cleaned with an equivalent AC discharge. The results obtained and a model for the mechanism behind the cleaning process are throughly discussed

  14. Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

    Energy Technology Data Exchange (ETDEWEB)

    Mayimele, M A, E-mail: meehleketo@gmail.com; Rensburg, J P van. Janse; Auret, F D; Diale, M

    2016-01-01

    We report on the analysis of current voltage (I–V) measurements performed on Pd/ZnO Schottky barrier diodes (SBDs) in the 80–320 K temperature range. Assuming thermionic emission (TE) theory, the forward bias I–V characteristics were analysed to extract Pd/ZnO Schottky diode parameters. Comparing Cheung’s method in the extraction of the series resistance with Ohm’s law, it was observed that at lower temperatures (T<180 K) the series resistance decreased with increasing temperature, the absolute minimum was reached near 180 K and increases linearly with temperature at high temperatures (T>200 K). The barrier height and the ideality factor decreased and increased, respectively, with decrease in temperature, attributed to the existence of barrier height inhomogeneity. Such inhomogeneity was explained based on TE with the assumption of Gaussian distribution of barrier heights with a mean barrier height of 0.99 eV and a standard deviation of 0.02 eV. A mean barrier height of 0.11 eV and Richardson constant value of 37 A cm{sup −2} K{sup −2} were determined from the modified Richardson plot that considers the Gaussian distribution of barrier heights.

  15. Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties

    Science.gov (United States)

    Jian, Guangzhong; He, Qiming; Mu, Wenxiang; Fu, Bo; Dong, Hang; Qin, Yuan; Zhang, Ying; Xue, Huiwen; Long, Shibing; Jia, Zhitai; Lv, Hangbing; Liu, Qi; Tao, Xutang; Liu, Ming

    2018-01-01

    β-Ga2O3 is an ultra-wide bandgap semiconductor with applications in power electronic devices. Revealing the transport characteristics of β-Ga2O3 devices at various temperatures is important for improving device performance and reliability. In this study, we fabricated a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio. Its temperature-dependent current-voltage and capacitance-voltage characteristics were measured at various temperatures. The characteristic diode parameters were derived using thermionic emission theory. The ideality factor n was found to decrease from 2.57 to 1.16 while the zero-bias barrier height Φb0 increased from 0.47 V to 1.00 V when the temperature was increased from 125 K to 350 K. This was explained by the Gaussian distribution of barrier height inhomogeneity. The mean barrier height Φ ¯ b0 = 1.27 V and zero-bias standard deviation σ0 = 0.13 V were obtained. A modified Richardson plot gave a Richardson constant A* of 36.02 A.cm-2.K-2, which is close to the theoretical value of 41.11 A.cm-2.K-2. The differences between the barrier heights determined using the capacitance-voltage and current-voltage curves were also in line with the Gaussian distribution of barrier height inhomogeneity.

  16. Towards diode-pumped mid-infrared praseodymium-ytterbium-doped fluoride fiber lasers

    Science.gov (United States)

    Woodward, R. I.; Hudson, D. D.; Jackson, S. D.

    2018-02-01

    We explore the potential of a new mid-infrared laser transition in praseodymium-doped fluoride fiber for emission around 3.4 μm, which can be conveniently pumped by 0.975 μm diodes via ytterbium sensitizer co-doping. Optimal cavity designs are determined through spectroscopic measurements and numerical modeling, suggesting that practical diode-pumped watt-level mid-infrared fiber sources beyond 3 μm could be achieved.

  17. Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

    Science.gov (United States)

    Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

    2014-07-21

    Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

  18. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  19. outcome of diode laser cyclophotocoagulation in neovascular ...

    African Journals Online (AJOL)

    Duke

    including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

  20. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  1. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2011-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  2. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  3. Tunable diode-pumped-LNA laser

    International Nuclear Information System (INIS)

    Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

    1987-01-01

    Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

  4. Transient currents in a molecular photo-diode

    OpenAIRE

    Petrov, E. G.; Leonov, V. O.; May, V.; Hänggi, P.

    2012-01-01

    Light-induced charge transmission through a molecular junction (molecular diode) is studied in the framework of a HOMO-LUMO model and in using a kinetic description. Expressions are presented for the sequential (hopping) and direct (tunneling) transient current components together with kinetic equations governing the time-dependent populations of the neutral and charged molecular states which participate in the current formation. Resonant and off-resonant charge transmission processes are ana...

  5. Study of bypass diodes configuration on PV modules

    Energy Technology Data Exchange (ETDEWEB)

    Silvestre, S.; Boronat, A.; Chouder, A. [Electronics Engineering Department - UPC., C/Jordi Girona 1-3, Modul C4 Campus Nord UPC., 08034 Barcelona (Spain)

    2009-09-15

    A procedure of simulation and modelling solar cells and PV modules, working partially shadowed in Pspice environment, is presented. Simulation results have been contrasted with real measured data from a commercial PV module of 209 Wp from Siliken. Some cases of study are presented as application examples of this simulation methodology, showing its potential on the design of bypass diodes configuration to include in a PV module and also on the study of PV generators working in partial shading conditions. (author)

  6. A new approach for multicriticality in directed and diode percolation

    International Nuclear Information System (INIS)

    Tsallis, C.; Boston Univ., MA; Redner, S.

    1983-01-01

    A new and very simple model for treating directed and more general diode percolation problems is presented, by allowing neighboring sites to be joined by up to two independent bonds of opposite orientations. A generalized 'break-collapse' method is developed to calculate renormalization group recursion relations. On the square lattice, a very symmetric phase diagram is obtained which displays multicritical percolation phenomena, and a variety of interesting conductivity transitions are predicted. (Author) [pt

  7. Chirp of monolithic colliding pulse mode-locked diode lasers

    DEFF Research Database (Denmark)

    Hofmann, M.; Bischoff, S.; Franck, Thorkild

    1997-01-01

    Spectrally resolved streak camera measurements of picosecond pulses emitted by hybridly colliding pulse mode-locked (CPM) laser diodes are presented in this letter. Depending on the modulation frequency both blue-chirped (upchirped) and red-chirped (downchirped) pulses can be observed. The two...... different regimes and the transition between them are characterized experimentally and the behavior is explained on the basis of our model for the CPM laser dynamics. (C) 1997 American Institute of Physics....

  8. Stopping atoms with diode lasers

    International Nuclear Information System (INIS)

    Watts, R.N.; Wieman, C.E.

    1986-01-01

    The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

  9. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  10. The effects of design parameters on vortex diode pump performance, 2

    International Nuclear Information System (INIS)

    Yoshitomi, Hideki; Koizumi, Tadao; Muroyama, Kenichi; Wada, Tsutomu.

    1989-01-01

    A fluidic pump with two vortex diodes is a new technology for transporting dangerous corrosive fluids without the use of moving parts. The pump can be connected with the discharge tank through series and cascade connections. In the previous report, we described the fundamentals and design criteria of the pump for the series connection case. This study has been performed with the same object as the previous work for the case of cascade connection. First, we present the basic pump characteristics with some dimensionless performance factors by analyzing the pump model. Then, the effects of the cylinder volumetric coefficient, driving pressure, suction-diode-to-delivery-diode-passage-area ratio and reverse-flow-to-forward-flow-resistance ratio of the vortex diode are investigated. As a result, the characteristic difference between series and cascade connections is clarified. Basic ways to decide the value of each performance factor are suggested. (author)

  11. Magnetic field induced suppression of the forward bias current in Bi2Se3/Si Schottky barrier diodes

    Science.gov (United States)

    Jin, Haoming; Hebard, Arthur

    Schottky diodes formed by van der Waals bonding between freshly cleaved flakes of the topological insulator Bi2Se3 and doped silicon substrates show electrical characteristics in good agreement with thermionic emission theory. The motivation is to use magnetic fields to modulate the conductance of the topologically protected conducting surface state. This surface state in close proximity to the semiconductor surface may play an important role in determining the nature of the Schottky barrier. Current-voltage (I-V) and capacitance-voltage (C-V) characteristics were obtained for temperatures in the range 50-300 K and magnetic fields, both perpendicular and parallel to the interface, as high as 7 T. The I-V curve shows more than 6 decades linearity on semi-logarithmic plots, allowing extraction of parameters such as ideality (η), zero-voltage Schottky barrier height (SBH), and series resistance (Rs). In forward bias we observe a field-induced decrease in current which becomes increasingly more pronounced at higher voltages and lower temperature, and is found to be correlated with changes in Rs rather than other barrier parameters. A comparison of changes in Rs in both field direction will be made with magnetoresistance in Bi2Se3 transport measurement. The work is supported by NSF through DMR 1305783.

  12. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-01-01

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

  13. Effect of the electric field during annealing of organic light emitting diodes for improving its on/off ratio.

    Science.gov (United States)

    Sharma, Rahul K; Katiyar, Monica; Rao, I V Kameshwar; Unni, K N Narayanan; Deepak

    2016-01-28

    If an organic light emitting diode is to be used as part of a matrix addressed array, it should exhibit low reverse leakage current. In this paper we present a method to improve the on/off ratio of such a diode by simultaneous application of heat and electric field post device fabrication. A green OLED with excellent current efficiency was seen to be suffering from a poor on/off ratio of 10(2). After examining several combinations of annealing along with the application of a reverse bias voltage, the on/off ratio of the same device could be increased by three orders of magnitude, specifically when the device was annealed at 80 °C under reverse bias (-15 V) followed by slow cooling also under the same bias. Simultaneously, the forward characteristics of the device were relatively unaffected. The reverse leakage in the OLED is mainly due to the injection of minority carriers in the hole transport layer (HTL) and the electron transport layer (ETL), in this case, of holes in tris-(8-hydroxyquinoline)aluminum(Alq3) and electrons in 4,4',4''-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (m-MTDATA). Hence, to investigate these layers adjacent to the electrodes, we fabricated their single layer devices. The possibility of bulk traps present adjacent to electrodes providing states for injection was ruled out after estimating the trap density both before and after the reverse biased annealing. The temperature independent current in reverse bias ruled out the possibility of thermionic injection. The origin of the reverse bias current is attributed to the availability of interfacial hole levels in Alq3 at the cathode work function level in the as-fabricated device; the suppression of the same being attributed to the fact that these levels in Alq3 are partly removed after annealing under an electric field.

  14. Shorting time of magnetically insulated reflex-ion diodes from the neutral-atom charge-exchange mechanism

    International Nuclear Information System (INIS)

    Strobel, G.

    1981-10-01

    In a magnetically insulated diode, collision-free electrons return to the cathode and no electron current is present at the anode. Electron transport to the anode is studied in this paper. Steady-state space-charge-limited flow is assumed initially. Breakdown of ion flow occurs when static neutral atoms at the anode undergo charge exchange, which results in neutral atoms drifting across the diode. These are subsequently ionized by reflexing ions producing electrons trapped in Larmor orbits throughout the diode. These electrons drift to the anode via ionization and inelastic collisions with other neutral atoms. Model calculations compare the effects of foil and mesh cathodes. Steady-state space-charge-limited ion current densities are calculated. The neutral atom density at the cathode is determined as a function of time. The shorting time of the diode is scaled versus the electrode separation d, the diode potential V 0 , the magnetic field, and the initial concentration of static neutron atoms

  15. Surface trapping phenomena in thermionic emission generating l/f noise

    International Nuclear Information System (INIS)

    Stepanescu, A.

    1975-01-01

    A general expression of the power spectrum of''flicker noise'', involving stochastic trapping phenomena and calculated on the basis of a two parameter model, is applied in the case of thermoionic emission from cathode surface. The fluctuation of the work function over the cathode surface is interpreted as being due to a trapping process of foreign atoms by the cathode. Taking into account the very physical nature of the trapping mechanism, under self-consistent assumptions, a 1/f power spectrum is obtained in a certain range of frequency. The two parameter model removes some discrepancies involved in the preceding theories. (author)

  16. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  17. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-06-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

  18. High-temperature Schottky diode characteristics of bulk ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Guer, Emre; Tuezemen, S; Kilic, Bayram; Coskun, C [Department of Physics, Faculty of Arts and Sciences, Atatuerk University, 25240 Erzurum (Turkey)

    2007-05-16

    Current-voltage (I-V) measurements of Ag/n-ZnO have been carried out at temperatures of 200-500 K in order to understand the temperature dependence of the diode characteristics. Forward-bias I-V analysis results in a Schottky barrier height of 0.82 eV and an ideality factor of 1.55 at room temperature. The barrier height of 0.74 eV and Richardson constant of 0.248 A K{sup -2} cm{sup -2} were also calculated from the Richardson plot, which shows nearly linear characteristics in the temperature range 240-440 K. From the nk{sub b}T/q versus k{sub b}T/q graph, where n is ideality factor, k{sub b} the Boltzmann constant, T the temperature and q the electronic charge we deduce that thermionic field emission (TFE) is dominant in the charge transport mechanism. At higher sample temperatures (>440 K), a trap-assisted tunnelling mechanism is proposed due to the existence of a deep donor situated at E{sub c}-0.62 eV with 3.3 x 10{sup -15} cm{sup 2} capture cross section observed by both deep-level transient spectroscopy (DLTS) and lnI{sub 0} versus 1/k{sub b}T plots. The ideality factor almost remains constant in the temperature range 240-400 K, which shows the stability of the Schottky contact in this temperature range.

  19. A study of creep behavior in refractory alloys for thermionic emitter applications

    International Nuclear Information System (INIS)

    Gao Hong; Zee, Ralph

    1997-01-01

    The creep behavior of HfC strengthened tungsten alloys was studied. An ultrahigh vacuum high precision creep test system was constructed for this purpose so that the samples could be heated up to 3000 K for heat treatment and creep strain could be measured from the creep sample inside the vacuum chamber. Creep tests were conducted in tungsten strengthened with 0.37 percent of HfC at temperatures between 2000 K to 2500 K for durations up to 8 weeks. To explain the creep behavior observed in this dispersion strengthened alloy, a creep model was proposed which accounted for the presence of HfC particles in the form of a back stress generated by these particles. This model was verified by the creep test data of a W-0.37HfC alloy tested under both extruded and recrystallized microstructural conditions. According to this model, the steady state creep of this type alloys was expected to increase with time due to the HfC particle coarsening and recrystallization under high temperatures. In contrast, conventional simple power law creep only predicts a constant steady state creep for these materials, which does not represent the microstructural evolution of the materials. In this study, the experimental study was designed to verify the semi-mechanistic phenomenological creep model developed for carbide particle strengthened tungsten alloys

  20. Analytic formalism for current crowding in light emitting diodes

    International Nuclear Information System (INIS)

    Lee, Kyu-Seok

    2012-01-01

    This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Cold cathode diode X-ray source

    International Nuclear Information System (INIS)

    Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

    1983-01-01

    A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

  2. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  3. A Portable Diode Array Spectrophotometer.

    Science.gov (United States)

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g. © The Author(s) 2016.

  4. High-Current-Density Thermionic Cathodes and the Generation of High-Voltage Electron Beams

    Science.gov (United States)

    1989-04-30

    Cathode Temperature =1700 OC Figure 37: Peak gun voltage = 90 kV -57- 60- 0 EGUN 327 ~40 0S 20’ Vacuum 5 .2 x 10 Tor 0 o 0 15202 30 Time (jis...by modeling the filament as a thin disk. The shape of the H - V -, 2 actual filament is sketched in Fig. 2. The EGUN code 1 131 is used to calculate

  5. Research and Development of a New Field Enhanced Low Temperature Thermionic Cathode that Enables Fluorescent Dimming and Loan Shedding without Auxiliary Cathode Heating

    Energy Technology Data Exchange (ETDEWEB)

    Feng Jin

    2009-01-07

    This is the final report for project entitled 'Research and development of a new field enhanced low temperature thermionic cathode that enables fluorescent dimming and load shedding without auxiliary cathode heating', under Agreement Number: DE-FC26-04NT-42329. Under this project, a highly efficient CNT based thermionic cathode was demonstrated. This cathode is capable of emitting electron at a current density two order of magnitude stronger then a typical fluorescent cathode at same temperatures, or capable of emitting at same current density but at temperature about 300 C lower than that of a fluorescent cathode. Detailed fabrication techniques were developed including CVD growth of CNTs and sputter deposition of oxide thin films on CNTs. These are mature technologies that have been widely used in industry for large scale materials processing and device fabrications, thus, with further development work, the techniques developed in this project can be scaled-up in manufacturing environment. The prototype cathodes developed in this project were tested in lighting plasma discharge environment. In many cases, they not only lit and sustain the plasma, but also out perform the fluorescent cathodes in key parameters such like cathode fall voltages. More work will be needed to further evaluate more detailed and longer term performance of the prototype cathode in lighting plasma.

  6. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  7. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  8. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals.

    Science.gov (United States)

    Shtepliuk, Ivan; Eriksson, Jens; Khranovskyy, Volodymyr; Iakimov, Tihomir; Lloyd Spetz, Anita; Yakimova, Rositsa

    2016-01-01

    A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current-voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium-graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT) calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I - V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

  9. Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

    Directory of Open Access Journals (Sweden)

    Ivan Shtepliuk

    2016-11-01

    Full Text Available A vertical diode structure comprising homogeneous monolayer epitaxial graphene on silicon carbide is fabricated by thermal decomposition of a Si-face 4H-SiC wafer in argon atmosphere. Current–voltage characteristics of the graphene/SiC Schottky junction were analyzed by applying the thermionic-emission theory. Extracted values of the Schottky barrier height and the ideality factor are found to be 0.4879 ± 0.013 eV and 1.01803 ± 0.0049, respectively. Deviations of these parameters from average values are smaller than those of previously observed literature data, thereby implying uniformity of the Schottky barrier height over the whole diode area, a stable rectifying behaviour and a good quality of ohmic palladium–graphene contacts. Keeping in mind the strong sensitivity of graphene to analytes we propose the possibility to use the graphene/SiC Schottky diode as a sensing platform for the recognition of toxic heavy metals. Using density functional theory (DFT calculations we gain insight into the nature of the interaction of cadmium, mercury and lead with graphene as well as estimate the work function and the Schottky barrier height of the graphene/SiC structure before and after applying heavy metals to the sensing material. A shift of the I–V characteristics of the graphene/SiC-based sensor has been proposed as an indicator of presence of the heavy metals. Since the calculations suggested the strongest charge transfer between Pb and graphene, the proposed sensing platform was characterized by good selectivity towards lead atoms and slight interferences from cadmium and mercury. The dependence of the sensitivity parameters on the concentration of Cd, Hg and Pb is studied and discussed.

  10. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  11. Effect of cathode and anode plasma motion on current characteristics of pinch diode

    International Nuclear Information System (INIS)

    Yang Hailiang; Qiu Aici; Sun Jianfeng; Li Jingya; He Xiaoping; Tang Junping; Li Hongyu; Wang Haiyang; Huang Jianjun; Ren Shuqing; Yang Li; Zou Lili

    2005-01-01

    The preliminary research results for the effect of cathode and anode plasma motion on current characteristics of the pinch ion diode on FLASH II accelerator are reported. The structure and principle of pinch reflex ion beam diode are introduced. The time dependent evolution of electron and ion flow in large aspect-ratio relativistic diodes is studied by analytic models. The equation of Child-langmuir, weak focused-flow, strong focused-flow and parapotential flow are corrected to reduce the diode A-C gap caused by the motion of cathode and anode plasma. The diode current and ion current are calculated with these corrected equations, and the results are consistent with the experimental data. The methods of increasing ion current and efficiency are also presented. The high power ion beam peak current about 160 kA with a peak energy about 500 keV was produced using water-dielectric transmission-line generators with super-pinch reflex ion diodes on FLASH II accelerator at Northwest Institute of Nuclear Technology (NINT). (authors)

  12. Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector.

    Science.gov (United States)

    Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

    2011-10-01

    This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

  13. Extraction of depth-dependent perturbation factors for silicon diodes using a plastic scintillation detector

    International Nuclear Information System (INIS)

    Lacroix, Frederic; Guillot, Mathieu; McEwen, Malcolm; Gingras, Luc; Beaulieu, Luc

    2011-01-01

    Purpose: This work presents the experimental extraction of the perturbation factor in megavoltage electron beams for three models of silicon diodes (IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded) using a plastic scintillation detector (PSD). Methods: The authors used a single scanning PSD mounted on a high-precision scanning tank to measure depth-dose curves in 6-, 12-, and 18-MeV clinical electron beams. They also measured depth-dose curves using the IBA Dosimetry, EFD and SFD, and the PTW 60012 unshielded diodes. The authors used the depth-dose curves measured with the PSD as a perturbation-free reference to extract the perturbation factors of the diodes. Results: The authors found that the perturbation factors for the diodes increased substantially with depth, especially for low-energy electron beams. The experimental results show the same trend as published Monte Carlo simulation results for the EFD diode; however, the perturbations measured experimentally were greater. They found that using an effective point of measurement (EPOM) placed slightly away from the source reduced the variation of perturbation factors with depth and that the optimal EPOM appears to be energy dependent. Conclusions: The manufacturer recommended EPOM appears to be incorrect at low electron energy (6 MeV). In addition, the perturbation factors for diodes may be greater than predicted by Monte Carlo simulations.

  14. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Bernigaud, Virgile; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Tailleur, Yaël; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

    2012-01-01

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., “Considerations of rod-pinch diode operation in negative polarity for radiography,” in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975–978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., “Theoretical modeling and experimental characterization of a rod-pinch diode,” Phys. Plasmas 8(10), 4618–4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., “Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,” IEEE Trans. Plasma Sci. 32(5), 2004–2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567–570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., “Negative polarity rod pinch diode experiments on the ASTERIX generator,” in Conference Records–Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most

  15. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

    2012-09-15

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization of a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to

  16. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-01-01

    zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF

  17. Compact laser-diode-based femtosecond sources

    International Nuclear Information System (INIS)

    Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

    2004-01-01

    This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

  18. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  19. Developments in lead-salt diode lasers

    International Nuclear Information System (INIS)

    Partin, D.L.

    1985-01-01

    Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

  20. AASERT-97 Development of New Diode Lasers

    National Research Council Canada - National Science Library

    Peyghambarian, Nasser

    2001-01-01

    This research explored new ways for diode laser fabrications. Focused was on the development of efficient organic light emitting materials and the fabrication of laser structures incorporating these materials...