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Sample records for textured zno thin

  1. Texture of obliquely sputtered ZnO thin films

    Science.gov (United States)

    Červeň, I.; Lacko, T.; Novotný, I.; Tvarožek, V.; Harvanka, M.

    1993-08-01

    A series of ZnO polycrystalline thin films were prepared on Si(100)/SiO 2/TiN substrates by radio frequency (RF) sputtering at various angles between the sputter direction and the substrate normal. The X-ray diffraction θ/2 θ scans confirmed the expected c-orientation of the films, depending at some extent on the angle of sputtering. The limited pole figures, obtained by rocking-curve measurement, show a slight deviation of the texture axis from the substrate normal direction, which increase with the sputtering angle. The texture axis is inclined not toward the sputtering direction, as was expected, but quite opposite.

  2. Textured ZnO thin films by RF magnetron sputtering

    CERN Document Server

    Ginting, M; Kang, K H; Kim, S K; Yoon, K H; Park, I J; Song, J S

    1999-01-01

    Textured thin films ZnO has been successfully grown by rf magnetron sputtering method using a special technique of introducing a small amount of water and methanol on the deposition chamber. The grain size of the textured surface is highly dependent on the argon pressure during the deposition. The pressure in this experiment was varied from 50 mTorr down to 5 mTorr and the highest grain size of the film is obtained at 5 mTorr. The total transmittance of the films are more than 85% in the wavelength of 400 to 800 nm, and haze ratio of about 14% is obtained at 400 nm wavelength. Beside the textured surface, these films also have very low resistivity, which is lower than 1.4x10 sup - sup 3 OMEGA centre dot cm. X-ray analysis shows that the films with textured surface have four diffraction peaks on the direction of (110), (002), (101) and (112), while the non-textured films have only (110) and (002) peaks. Due to the excellent characteristics of this film, it will make the film very good TCO alternatives for the ...

  3. Deposition conditions for the growth of textured ZnO thin films by aerosol CVD process

    OpenAIRE

    Deschanvres, J.-L.; Bochu, B.; Joubert, J.-C.

    1993-01-01

    The crystalline orientation of ZnO thin films deposited by an aerosol CVD process is studied with regard to the experimental conditions. The quality of the C-axis oriented growth depended on the substrate temperature, on the deposition rate and also on the hygrometric degree of the carrier gas. The quality of the gold sublayer influenced also the quality of the ZnO textured growth. Under a dry gas mixture N2-O2 at 495°C and with a deposition rate of 35Å/mn, the texture ratio was less than -3....

  4. Growth of vertically aligned ZnO nanorods using textured ZnO films

    OpenAIRE

    Meléndrez Manuel; Martínez Eduardo; Solís-Pomar Francisco; Pérez-Tijerina Eduardo

    2011-01-01

    Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the norm...

  5. Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications.

    Science.gov (United States)

    Tsai, Chin-Yi; Lai, Jyong-Di; Feng, Shih-Wei; Huang, Chien-Jung; Chen, Chien-Hsun; Yang, Fann-Wei; Wang, Hsiang-Chen; Tu, Li-Wei

    2017-01-01

    In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10-50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

  6. Preferential growth of ZnO thin films by the atomic layer deposition technique

    Science.gov (United States)

    Pung, Swee-Yong; Choy, Kwang-Leong; Hou, Xianghui; Shan, Chongxin

    2008-10-01

    Preferred orientation of ZnO thin films deposited by the atomic layer deposition (ALD) technique could be manipulated by deposition temperature. In this work, diethyl zinc (DEZn) and deionized water (H2O) were used as a zinc source and oxygen source, respectively. The results demonstrated that (10.0) dominant ZnO thin films were grown in the temperature range of 155-220 °C. The c-axis crystal growth of these films was greatly suppressed. Adhesion of anions (such as fragments of an ethyl group) on the (00.2) polar surface of the ZnO thin film was believed to be responsible for this suppression. In contrast, (00.2) dominant ZnO thin films were obtained between 220 and 300 °C. The preferred orientations of (10.0) and (00.2) of the ZnO thin films were examined by XRD texture analysis. The texture analysis results agreed well with the alignments of ZnO nanowires (NWs) which were grown from these ZnO thin films. In this case, the nanosized crystals of ZnO thin films acted as seeds for the growth of ZnO nanowires (NWs) by chemical vapor deposition (CVD) process. The highly (00.2) textured ZnO thin films deposited at high temperatures, such as 280 °C, contained polycrystals with the c axis perpendicular to the substrate surface and provided a good template for the growth of vertically aligned ZnO NWs.

  7. Synthesis and annealing study of RF sputtered ZnO thin film

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu [Department of Physics, Malaviya National Institute of Technology, Jaipur, JLN Marg, Malaviya Nagar, Jaipur-302017 (India); Singhal, R. [Department of Physics and Materials Research Centre, Malaviya National Institute of Technology Jaipur, JLN Marg, Malaviya Nagar, Jaipur-302017 (India); Kumar, V. V. Siva; Avasthi, D. K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi-110067 (India)

    2016-05-23

    In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structure of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.

  8. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  9. Growth of vertically aligned ZnO nanorods using textured ZnO films.

    Science.gov (United States)

    Solís-Pomar, Francisco; Martínez, Eduardo; Meléndrez, Manuel F; Pérez-Tijerina, Eduardo

    2011-09-07

    A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD) is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100) substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS: 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.).

  10. Nanocrystalline ZnO film deposited by ultrasonic spray on textured silicon substrate as an anti-reflection coating layer

    Energy Technology Data Exchange (ETDEWEB)

    Sali, S., E-mail: samira_sali@yahoo.fr [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Houari Boumediene University (USTHB), Faculty of Physics, Algiers (Algeria); Boumaour, M. [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria); Kechouane, M. [Houari Boumediene University (USTHB), Faculty of Physics, Algiers (Algeria); Kermadi, S.; Aitamar, F. [Silicon Technology Development Unit (UDTS), 02 Bd, Frantz FANON, B.P. 140, Algiers (Algeria)

    2012-07-01

    A ZnO thin film was successfully synthesized on glass, flat surface and textured silicon substrates by chemical spray deposition. The textured silicon substrate was carried out using two solutions (NaOH/IPA and Na{sub 2}CO{sub 3}). Textured with Na{sub 2}CO{sub 3} solution, the sample surface exhibits uniform pyramids with an average height of 5 {mu}m. The properties and morphology of ZnO films were investigated. X-ray diffraction (XRD) spectra revealed a preferred orientation of the ZnO nanocrystalline film along the c-axis where the low value of the tensile strain 0.26% was obtained. SEM images show that all films display a granular, polycrystalline morphology. The morphology of the ZnO layers depends dramatically on the substrate used and follows the contours of the pyramids on the substrate surface. The average reflectance of the textured surface was found to be around 13% and it decreases dramatically to 2.57% after deposition of a ZnO antireflection coating. FT-IR peaks arising from the bonding between Zn-O are clearly represented using a silicon textured surface. A very intense photoluminescence (PL) emission peak is observed for ZnO/textured Si, revealing the good quality of the layer. The PL peak at 380.5 nm (UV emission) and the high-intensity PL peak at 427.5 nm are observed and a high luminescence occurs when using a textured Si substrate.

  11. Optimization of growth conditions of ZnO nano thin films by chemical double dip technique

    Energy Technology Data Exchange (ETDEWEB)

    Vijayan, Thirukonda Anandamoorthy; Chandramohan, Rathinam; Thirumalai, Jagannathan [Department of Physics, Sree Sevugan Annamalai College, Devakottai-630 303 (India); Valanarasu, Santiyagu [Department of Physics, Ananda College, Devakottai-630 303 (India); Venkateswaran, Sivasuriyan [Department of Chemistry, Sree Sevugan Annamalai College, Devakottai-630 303 (India); Mahalingam, Thaiyan [Department of Physics, Alagappa University, Karaikudi-630 003 (India); Srikumar, Subbiah Ramachandran [Department of Physics, Kalasalingam University, Krishnankoil-626 190 (India)], E-mail: chandru17@yahoo.com

    2008-07-01

    Zinc oxide (ZnO) nano thin films have been deposited by the chemical double-dip technique using aqueous ZnSO{sub 4} and NaOH solutions. The ZnO films were characterized in terms of surface morphology by x-ray diffraction, energy-dispersive x-ray analysis (EDX), the use of a scanning electron microscope (SEM) and atomic force microscope (AFM) for surface morphology. The films exhibited a smooth morphology. The chemical states of oxygen and zinc in the ZnO nano thin films were also investigated by x-ray photoelectron spectroscopy (XPS). In the present investigations, highly textured ZnO thin films with a preferential (002)-orientation were prepared on glass substrates. The deposition conditions were optimized to obtain device-quality films for practical applications.

  12. Investigations into the impact of various substrates and ZnO ultra thin seed layers prepared by atomic layer deposition on growth of ZnO nanowire array

    Science.gov (United States)

    Ding, JN; Liu, YB; Tan, CB; Yuan, NY

    2012-07-01

    The impact of various substrates and zinc oxide (ZnO) ultra thin seed layers prepared by atomic layer deposition on the geometric morphology of subsequent ZnO nanowire arrays (NWs) fabricated by the hydrothermal method was investigated. The investigated substrates included B-doped ZnO films, indium tin oxide films, single crystal silicon (111), and glass sheets. Scanning electron microscopy and X-ray diffraction measurements revealed that the geometry and aligment of the NWs were controlled by surface topography of the substrates and thickness of the ZnO seed layers, respectively. According to atomic force microscopy data, we suggest that the substrate, fluctuate amplitude and fluctuate frequency of roughness on ZnO seed layers have a great impact on the alignment of the resulting NWs, whereas the influence of the seed layers' texture was negligible.

  13. Optical and Electrical Performance of ZnO Films Textured by Chemical Etching

    Directory of Open Access Journals (Sweden)

    Shiuh-Chuan HER

    2015-11-01

    Full Text Available Zinc oxide (ZnO films were prepared by radio frequency (RF magnetron sputtering on the glass substrate as transparent conductive oxide films. For silicon solar cells, a proper surface texture is essential to introduce light scattering and subsequent light trapping to enhance the current generation. In this study, the magnetron-sputtered ZnO films were textured by wet-chemical etching in diluted hydrochloric acid (HCl for better light scattering. The diffuse transmittance of the surface textured ZnO films was measured to evaluate the light scattering. The influence of hydrochloric acid concentration on the morphology, optical and electrical properties of the surface-textured ZnO film was investigated. The ZnO film etched in 0.05M HCl solution for 30 s exhibited average diffuse transmittance in the visible wavelength range of 9.52 % and good resistivity of 1.10 x 10-3 W×cm while the as-deposited ZnO film had average diffuse transmittance of 0.51 % and relatively high resistivity of 5.84 x 10-2 W×cm. Experimental results illustrated that the optical and electrical performance of ZnO films can be significantly improved by introducing the surface texture through the wet-chemical etching process.DOI: http://dx.doi.org/10.5755/j01.ms.21.4.9624

  14. Structural and morphological study of ZnO thin films electrodeposited on n-type silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ait Ahmed, N., E-mail: nadiaitahmed@yahoo.fr [Laboratoire de Technologie des materiaux et Genie des Procedes : Equipe d' electrochimie - Corrosion Universite Abderrahmane Mira, Bejaia, 06000 (Algeria); Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Fortas, G. [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Hammache, H. [Laboratoire de Technologie des materiaux et Genie des Procedes : Equipe d' electrochimie - Corrosion Universite Abderrahmane Mira, Bejaia, 06000 (Algeria); Sam, S.; Keffous, A.; Manseri, A. [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria); Guerbous, L. [Centre de Recherche Nucleaire d' Alger (Algeria); Gabouze, N., E-mail: ngabouze@yahoo.fr [Unite de Developpement de la Technologie du Silicium, 02 Bd Frantz Fanon, B.P. 140, Alger 7 Merveilles (Algeria)

    2010-10-01

    In this work, we report on the electrodeposition of ZnO thin films on n-Si (1 0 0) and glass substrates. The influence of the deposition time on the morphology of ZnO thin films was investigated. The ZnO thin films were characterized by X-ray diffraction (XRD), energy dispersive X-ray (EDS) and scanning electron microscopy (SEM). The results show a variation of ZnO texture from main (0 0 2) at 10 min to totally (1 0 1) at 15 min deposition time. The photoluminescence (PL) studies show that both UV ({approx}382 nm) and blue ({approx}432 nm) luminescences are the main emissions for the electrodeposited ZnO films. In addition, the film grown at 15 min indicates an evident decrease of the yellow-green ({approx}520 nm) emission band comparing with that of 10 min. Finally, transmittance spectra show a high transmission value up to 85% in the visible wavelength range. Such results would be very interesting for solar cells applications.

  15. Hybrid processing and anisotropic sintering shrinkage in textured ZnO ceramics

    Science.gov (United States)

    Keskinbora, Kahraman; Suzuki, Tohru S.; Ozgur Ozer, I.; Sakka, Yoshio; Suvaci, Ender

    2010-12-01

    We have studied the combined effects of the templated grain growth and magnetic alignment processes on sintering, anisotropic sintering shrinkage, microstructure development and texture in ZnO ceramics. Suspensions of 0-10 vol % ZnO template particles were slip cast in a 12 T rotating magnetic field. Sintering and texture characteristics were investigated via thermomechanical analysis and electron backscatter diffraction, respectively. Sintering as well as texture characteristics depend on template concentration. For the studied ZnO system, there is a critical template concentration (2 vol % in this study) above which densification is limited by the templates owing to constrained sintering. Below this limit, the densification is enhanced and the anisotropic shrinkage is reduced, which is attributed to densifying characteristics of the templates.

  16. Amorphous silicon solar cells on natively textured ZnO grown by PECVD

    NARCIS (Netherlands)

    Löffler, J.; Groenen, R.; Linden, J.L.; Sanden, M.C.M. van de; Schropp, R.E.I.

    2001-01-01

    Natively textured ZnO layers deposited by the expanding thermal plasma CVD technique between 150 and 350°C at a deposition rate between 0.65 and 0.75 nm/s have been investigated with respect to their suitability as front electrode material for amorphous silicon pin solar cells in comparison to

  17. Expanding thermal plasma CVD of textured ZNO with focus on solar cell applications

    NARCIS (Netherlands)

    Groenen, R.; Sanden, M.C.M. van de; Löffler, J.; Schropp, R.E.I.; Linden, J.L.

    2000-01-01

    A new method for low temperature deposition of surface textured ZnO is presented utilizing an expanding thermal plasma created by a cascaded arc. Films have been deposited at 150-350°C at a rate of typically 0.65-0.75 nm/s, exhibiting low sheet resistance (> 10 Ω/□), high transmittance (>80%) and a

  18. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  19. Laser nanostructuring of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Nedyalkov, N., E-mail: nned@ie.bas.bg [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan); Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Koleva, M.; Nikov, R.; Atanasov, P. [Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shousse 72, Sofia 1784 (Bulgaria); Nakajima, Y.; Takami, A.; Shibata, A.; Terakawa, M. [Department of Electronics and Electrical Engineering, Keio University, 3-14-1 Hiyoshi Kohoku-ku, Yokohama-shi, Kanagawa-ken 223-8522 (Japan)

    2016-06-30

    Highlights: • Nanosecond laser pulse nanostructuring of ZnO thin films on metal substrate is demonstrated. • Two regimes of the thin film modification are observed depending on the applied laser fluence. • At high fluence regime the ZnO film is homogeneously decomposed into nanosized particles. • The characteristic size of the formed nanostructures corresponds to the domain size of the thin film. - Abstract: In this work, results on laser processing of thin zinc oxide films deposited on metal substrate are presented. ZnO films are obtained by classical nanosecond pulsed laser deposition method in oxygen atmosphere on tantalum substrate. The produced films are then processed by nanosecond laser pulses at wavelength of 355 nm. The laser processing parameters and the film thickness are varied and their influence on the fabricated structures is estimated. The film morphology after the laser treatment is found to depend strongly on the laser fluence as two regimes are defined. It is shown that at certain conditions (high fluence regime) the laser treatment of the film leads to formation of a discrete nanostructure, composed of spherical like nanoparticles with narrow size distribution. The dynamics of the melt film on the substrate and fast cooling are found to be the main mechanisms for fabrication of the observed structures. The demonstrated method is an alternative way for direct fabrication of ZnO nanostructures on metal which can be easy implemented in applications as resistive sensor devices, electroluminescent elements, solar cell technology.

  20. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    ZnO annealed under O2 ambient and an amount of Lii(o) defect had existed in ZnO annealed under Ar ambient. First-principle calculations were performed to calculate formation energies of Li-doped ZnO in order to explain the formation mechanism of Li-related defects in ZnO. Keywords. ZnO; thin films; radio frequency ...

  1. Polyelectrolyte-assisted preparation and characterization of nanostructured ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jia, Shijun

    2005-05-15

    The present work focuses on the synthesis and characterization of nanostructured ZnO thin films onto silicon wafers modified by self-assembled-monolayers via chemical bath deposition. Two precursor solutions were designed and used for the film deposition, in which two different polymers were introduced respectively to control the growth of the ZnO colloidal particles in solution. ZnO films were deposited from an aqueous solution containing zinc salt and hexamethylenetetramine (HMTA) in the presence of a graft-copolymer (P (MAA{sub 0.50}-co(MAA-EO{sub 20}){sub 0.50}){sub 70}). A film-formation-diagram was established based on the results obtained by scanning electron microscopy (SEM) and atomic force microscopy (AFM), which describes the influence of the concentration of HMTA and copolymer on the ZnO film formation. According to the film morphology, film formation can be classified into three categories: (a) island-like films, (b) uniform films and (c) canyon-like films. The ZnO films annealed at temperatures of 450 C, 500 C, 600 C and 700 C were examined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). After annealing, the films are polycrystalline ZnO with wurtzite structure. XRD measurements indicate that with increasing annealing temperature, the average grain size increases accordingly and the crystallinity of the films is improved. Upon heating to 600 C, the ZnO films exhibit preferred orientation with c-axis normal to substrate, whereas the films annealed at 700 C even show a more explicit texture. By annealing at temperatures above 600 C the ZnO film reacts with the substrate to form an interfacial layer of Zn{sub 2}SiO{sub 4}, which grows thicker at elevated annealing temperatures. The ZnO films annealed at 600 C and 700 C show strong UV emission. Another non-aqueous solution system for ZnO thin film deposition was established, in which 2- propanol was used as a solvent and Zn(CH3COO){sub 2}.2H{sub 2}O as well as NaOH as reactants

  2. Development of nanostructured ZnO thin film via electrohydrodynamic atomization technique and its photoconductivity characteristics.

    Science.gov (United States)

    Duraisamy, Navaneethan; Kwon, Ki Rin; Jo, Jeongdai; Choi, Kyung-Hyun

    2014-08-01

    This article presents the non-vacuum technique for the preparation of nanostructured zinc oxide (ZnO) thin film on glass substrate through electrohydrodynamic atomization (EHDA) technique. The detailed process parameters for achieving homogeneous ZnO thin films are clearly discussed. The crystallinity and surface morphology of ZnO thin film are investigated by X-ray diffraction and field emission scanning electron microscopy. The result shows that the deposited ZnO thin film is oriented in the wurtzite phase with void free surface morphology. The surface roughness of deposited ZnO thin film is found to be ~17.8 nm. The optical properties of nanostructured ZnO thin films show the average transmittance is about 90% in the visible region and the energy band gap is found to be 3.17 eV. The surface chemistry and purity of deposited ZnO thin films are analyzed by fourier transform infrared and X-ray photoelectron spectroscopy, conforming the presence of Zn-O in the deposited thin films without any organic moiety. The photocurrent measurement of nanostructured ZnO thin film is examined in the presence of UV light illumination with wavelength of 365 nm. These results suggest that the deposited nanostructured ZnO thin film through EHDA technique possess promising applications in the near future.

  3. Effect of heat treatment on microstructural and optical properties of CBD grown Al-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Chandramohan, R., E-mail: rathinam.chandramohan@gmail.com [Department of Physics, Sree Sevugan Annamalai College, College Road, Devakottai 630303 (India); Vijayan, T.A. [Department of Physics, Sree Sevugan Annamalai College, College Road, Devakottai 630303 (India); Arumugam, S.; Ramalingam, H.B. [Department of Physics, Government Arts College, Udumalpet 642126 (India); Dhanasekaran, V.; Sundaram, K.; Mahalingam, T. [Department of Physics, Alagappa University, Karaikudi 630003 (India)

    2011-02-15

    Research highlights: > Effect of annealing temperature on Al-doped ZnO thin films. > Microstructural properties of Al-doped ZnO thin films. > Optical constants are found to increase with increase of heat treatment. - Abstract: Investigations on the effect of annealing temperature on the structural, optical properties and morphology of Al-doped ZnO thin films deposited on glass substrate by chemical bath deposition have been carried out. X-ray diffraction studies revealed that deposited films are in polycrystalline nature with hexagonal structure along the (0 0 2) crystallographic plane. Microstructural properties of films such as crystallite size, texture coefficient, stacking fault probability and microstrain were calculated from predominant (0 0 2) diffraction lines. The UV-Vis-NIR spectroscopy studies revealed that all the films have high optical transmittance (>60%) in the visible range. The optical band gap values are found to be in the range of 3.25-3.31 eV. Optical constants have been estimated and the values of n and k are found to increase with increase of heat treatment. The films have increased transmittance with increase of heat treatment. Al-doped ZnO thin films fabricated by this simple and economic chemical bath deposition technique without using any carrier gas are found to be good in structural and optical properties which are desirable for photovoltaic applications. Scanning electron microscopic images revealed that the hexagonal shaped grains that occupy the entire surface of the film with its near stoichiometric composition.

  4. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes.

    Science.gov (United States)

    Blumenstein, Nina J; Hofmeister, Caroline G; Lindemann, Peter; Huang, Cheng; Baier, Johannes; Leineweber, Andreas; Walheim, Stefan; Wöll, Christof; Schimmel, Thomas; Bill, Joachim

    2016-01-01

    In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiO x surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002) texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). Infrared spectroscopy (IR) measurements were used to investigate the polystyrene brushes before and after modification.

  5. Chemical bath deposition of textured and compact zinc oxide thin films on vinyl-terminated polystyrene brushes

    Directory of Open Access Journals (Sweden)

    Nina J. Blumenstein

    2016-01-01

    Full Text Available In this study we investigated the influence of an organic polystyrene brush on the deposition of ZnO thin films under moderate conditions. On a non-modified SiOx surface, island growth is observed, whereas the polymer brush induces homogeneous film growth. A chemical modification of the polystyrene brushes during the mineralization process occurs, which enables stronger interaction between the then polar template and polar ZnO crystallites in solution. This may lead to oriented attachment of the crystallites so that the observed (002 texture arises. Characterization of the templates and the resulting ZnO films were performed with ζ-potential and contact angle measurements as well as scanning electron microscopy (SEM, atomic force microscopy (AFM and X-ray diffraction (XRD. Infrared spectroscopy (IR measurements were used to investigate the polystyrene brushes before and after modification.

  6. Sol-gel derived Al-Ga co-doped transparent conducting oxide ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Serrao, Felcy Jyothi, E-mail: jyothiserrao@gmail.com [Department of studies in Physics, Mangalore University, Mangalagangothri 574199 (India); Department of Physics, Karnataka Government Research centre SCEM, Mangalore, 575007 (India); Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M. [Department of studies in Physics, Mangalore University, Mangalagangothri 574199 (India)

    2016-05-23

    Transparent conducting ZnO doped with Al, Ga and co-doped Al and Ga (1:1) (AGZO) thin films were grown on glass substrates by cost effective sol-gel spin coating method. The XRD results showed that all the films are polycrystalline in nature and highly textured along the (002) plane. Enhanced grain size was observed in the case of AGZO thin films. The transmittance of all the films was more than 83% in the visible region of light. The electrical properties such as carrier concentration and mobility values are increased in case of AGZO compared to that of Al and Ga doped ZnO thin films. The minimum resistivity of 2.54 × 10{sup −3} Ω cm was observed in AGZO thin film. The co-doped AGZO thin films exhibited minimum resistivity and high optical transmittance, indicate that co-doped ZnO thin films could be used in transparent electronics mainly in display applications.

  7. Au cluster growth on ZnO thin films by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gyoergy, E. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain)]. E-mail: egyorgy@icmab.es; Santiso, J. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain); Figueras, A. [Consejo Superior de Investigaciones Cientificas, Instituto de Ciencia de Materiales de Barcelona, Campus UAB, 08193 Bellaterra (Spain); Giannoudakos, A. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, Vasileos Konstantinou Avenue 48, 11635 Athens (Greece); Kompitsas, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, Vasileos Konstantinou Avenue 48, 11635 Athens (Greece); Mihailescu, I.N. [Institute of Atomic Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Ducu, C. [University of Pitesti, Targul din Vale 1, 110040 Pitesti (Romania)

    2006-04-30

    Nanostructures formed by Au nanoparticles on ZnO thin film surface are of interest for applications which include medical implants, gas-sensors, and catalytic systems. A frequency tripled Nd:YAG laser ({lambda} = 355 nm, {tau} {sub FWHM} {approx} 10 ns) was used for the successive irradiation of the Zn and Au targets. The ZnO films were synthesized in 20 Pa oxygen pressure while the subsequent Au coverage was grown in vacuum. The obtained structures surface morphology, crystalline quality, and chemical composition depth profile were investigated by acoustic (dynamic) mode atomic force microscopy, X-ray diffraction, and wavelength dispersive X-ray spectroscopy. The surface is characterized by a granular morphology, with average grain diameters of a few tens of nanometers. The surface roughness decreases with the increase of the number of laser pulses applied for the irradiation of the Au target. The Au coverage reveals a predominant (1 1 1) texture, whereas the underlying ZnO films are c-axis oriented. A linear dependence was established between the thickness of the Au coverage and the number of laser pulses applied for the irradiation of the Au target.

  8. Analysis of Li-related defects in ZnO thin films influenced by ...

    Indian Academy of Sciences (India)

    Li-doped ZnO thin films were grown on quartz substrates by radio frequency magnetron sputtering and in situ annealing under O2 or Ar ambient. Li-related defects in ZnO films strongly depend on the annealing ambient. AFM and XRD indicated that ZnO films possessed a good crystallinity with -axis orientation, uniform ...

  9. The characterization of Cu-doped ZnO thin films prepared by using radio-frequency reactive magnetron sputtering

    Science.gov (United States)

    Cai, Chaoqun; Zhang, Hongqiang; Xie, Jun; Ma, Ligang

    2017-05-01

    Textured zinc-oxide (ZnO) thin films and Cu-doped ZnO (ZnO:Cu) thin films are deposited on glass substrates by using radio-frequency reactive magnetron sputtering. The effect of Cu-doping concentration on the crystallization behavior, surface morphology, transmission spectrum, and luminescence properties of the ZnO thin films are systematically investigated by using X-ray diffraction, scanning probe microscopy and photoluminescence spectra. The results indicate that the crystallization quality, morphology, transmission, and luminescence of the ZnO films is affected by Cu-element doping. A stronger preferred orientation toward the c-axis is obtained after Cu doping at an appropriate concentration (3%). The transmittance rate gradually decreases with increasing Cu doping concentration. In the photoluminescence spectra of the samples measured at room temperature, four main emission peaks are observed: a violet peak located at about 390 nm, two blue peaks, one located at about 445 nm and the other at about 485 nm, and a green peak located at about 527 nm. The origins of these emissions are discussed in detail.

  10. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  11. Development of textured ZnO-coated low-cost glass substrate with very high haze ratio for silicon-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Hongsingthong, Aswin, E-mail: aswin.hongsingthong@nectec.or.th [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Krajangsang, Taweewat; Limmanee, Amornrat; Sriprapha, Kobsak; Sritharathikhun, Jaran [Solar Energy Technology Laboratory, National Electronics and Computer Technology Center, 112 Thailand Science Park, Phahonyothin Road, Khlong 1, Khlong Luang, Pathumthani 12120 (Thailand); Konagai, Makoto [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1, NE-15, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2013-06-30

    Zinc oxide (ZnO) films with a very high haze ratio and low resistivity were developed on soda–lime glass substrate by using reactive ion etching (RIE) treatment with carbon tetrafluoride (CF{sub 4}) to modify the substrate surface morphology before the deposition of ZnO films. We found that the surface morphology of the ZnO films deposited by metal organic chemical vapor deposition (MOCVD) technique could be modified by varying the glass treatment conditions and the gas pressure was a key parameter. With increasing glass-etching pressure, the surface morphology of the ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like double texture, leading to significant increases in root mean square roughness and haze ratio of the films. By employing the developed high-haze ZnO films as a front transparent conductive oxide (TCO) layer in microcrystalline silicon solar cells, an enhancement in the quantum efficiency in the long-wavelength region has been achieved. Experimental results have verified that our unique and original glass etching treatment is a simple and effective technique to improve the light-scattering properties of the ZnO films while preserving their good transparency and electrical properties. Thus, the ZnO films deposited on etched soda–lime glass have a high potential for the use as a front TCO layer in thin-film Si solar cells. - Highlights: • High-haze zinc oxide (ZnO) grown on low cost soda–lime glass has been developed. • Surface of the ZnO can be modified by varying glass-substrate etching conditions. • Glass-etching pressure is a key to increase haze ratio of the ZnO films. • Higher cell efficiency has been achieved from cell using etched glass. • High-haze ZnO coated glass is a promising transparent conductive oxide coated glass.

  12. Role of ZnO thin film in the vertically aligned growth of ZnO nanorods by chemical bath deposition

    Science.gov (United States)

    Son, Nguyen Thanh; Noh, Jin-Seo; Park, Sungho

    2016-08-01

    The effect of ZnO thin film on the growth of ZnO nanorods was investigated. ZnO thin films were sputter-deposited on Si substrate with varying the thickness. ZnO nanorods were grown on the thin film using a chemical bath deposition (CBD) method at 90 °C. The ZnO thin films showed granular structure and vertical roughness on the surface, which facilitated the vertical growth of ZnO nanorods. The average grain size and the surface roughness of ZnO film increased with an increase in film thickness, and this led to the increase in both the average diameter and the average length of vertically grown ZnO nanorods. In particular, it was found that the average diameter of ZnO nanorods was very close to the average grain size of ZnO thin film, confirming the role of ZnO film as a seed layer for the vertical growth of ZnO nanorods. The CBD growth on ZnO seed layers may provide a facile route to engineering vertically aligned ZnO nanorod arrays.

  13. Highly textured and transparent RF sputtered Eu2O3 doped ZnO films

    Directory of Open Access Journals (Sweden)

    Remadevi Sreeja Sreedharan

    2015-03-01

    Full Text Available Background: Zinc oxide (ZnO is a wide, direct band gap II-VI oxide semiconductor. ZnO has large exciton binding energy at room temperature, and it is a good host material for obtaining visible and infrared emission of various rare-earth ions. Methods: Europium oxide (Eu2O3 doped ZnO films are prepared on quartz substrate using radio frequency (RF magnetron sputtering with doping concentrations 0, 0.5, 1, 3 and 5 wt%. The films are annealed in air at a temperature of 773 K for 2 hours. The annealed films are characterized using X-ray diffraction (XRD, micro-Raman spectroscopy, atomic force microscopy, ultraviolet (UV-visible spectroscopy and photoluminescence (PL spectroscopy. Results: XRD patterns show that the films are highly c-axis oriented exhibiting hexagonalwurtzite structure of ZnO. Particle size calculations using Debye-Scherrer formula show that average crystalline size is in the range 15–22 nm showing the nanostructured nature of the films. The observation of low- and high-frequency E2 modes in the Raman spectra supports the hexagonal wurtzite structure of ZnO in the films. The surface morphology of the Eu2O3 doped films presents dense distribution of grains. The films show good transparency in the visible region. The band gaps of the films are evaluated using Tauc plot model. Optical constants such as refractive index, dielectric constant, loss factor, and so on are calculated using the transmittance data. The PL spectra show both UV and visible emissions. Conclusion: Highly textured, transparent, luminescent Eu2O3 doped ZnO films have been synthesized using RF magnetron sputtering. The good optical and structural properties and intense luminescence in the ultraviolet and visible regions from the films suggest their suitability for optoelectronic applications.

  14. Surface Engineering of ZnO Thin Film for High Efficiency Planar Perovskite Solar Cells.

    Science.gov (United States)

    Tseng, Zong-Liang; Chiang, Chien-Hung; Wu, Chun-Guey

    2015-09-28

    Sputtering made ZnO thin film was used as an electron-transport layer in a regular planar perovskite solar cell based on high quality CH3NH3PbI3 absorber prepared with a two-step spin-coating. An efficiency up to 15.9% under AM 1.5G irradiation is achieved for the cell based on ZnO film fabricated under Ar working gas. The atmosphere of the sputtering chamber can tune the surface electronic properties (band structure) of the resulting ZnO thin film and therefore the photovoltaic performance of the corresponding perovskite solar cell. Precise surface engineering of ZnO thin film was found to be one of the key steps to fabricate ZnO based regular planar perovskite solar cell with high power conversion efficiency. Sputtering method is proved to be one of the excellent techniques to prepare ZnO thin film with controllable properties.

  15. ZnO transparent conductive oxide for thin film silicon solar cells

    Science.gov (United States)

    Söderström, T.; Dominé, D.; Feltrin, A.; Despeisse, M.; Meillaud, F.; Bugnon, G.; Boccard, M.; Cuony, P.; Haug, F.-J.; Faÿ, S.; Nicolay, S.; Ballif, C.

    2010-03-01

    There is general agreement that the future production of electric energy has to be renewable and sustainable in the long term. Photovoltaic (PV) is booming with more than 7GW produced in 2008 and will therefore play an important role in the future electricity supply mix. Currently, crystalline silicon (c-Si) dominates the market with a share of about 90%. Reducing the cost per watt peak and energy pay back time of PV was the major concern of the last decade and remains the main challenge today. For that, thin film silicon solar cells has a strong potential because it allies the strength of c-Si (i.e. durability, abundancy, non toxicity) together with reduced material usage, lower temperature processes and monolithic interconnection. One of the technological key points is the transparent conductive oxide (TCO) used for front contact, barrier layer or intermediate reflector. In this paper, we report on the versatility of ZnO grown by low pressure chemical vapor deposition (ZnO LP-CVD) and its application in thin film silicon solar cells. In particular, we focus on the transparency, the morphology of the textured surface and its effects on the light in-coupling for micromorph tandem cells in both the substrate (n-i-p) and superstrate (p-i-n) configurations. The stabilized efficiencies achieved in Neuchâtel are 11.2% and 9.8% for p-i-n (without ARC) and n-i-p (plastic substrate), respectively.

  16. Plasmonic enhancement of UV emission from ZnO thin films induced by Al nano-concave arrays

    Energy Technology Data Exchange (ETDEWEB)

    Norek, Małgorzata, E-mail: mnorek@wat.edu.pl [Department of Advanced Materials and Technologies, Faculty of Advanced Technologies and Chemistry, Military University of Technology, Kaliskiego 2, 00-908 Warsaw (Poland); Łuka, Grzegorz [Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw (Poland); Włodarski, Maksymilian [Institute of Optoelectronics, Military University of Technology, Str. Kaliskiego 2, 00-908 Warszawa (Poland)

    2016-10-30

    Highlights: • Al nano-concave arrays with different interpore distance (D{sub c}) were prepared. • PL of ZnO thin films deposited directly on the Al nano-concaves were studied. • The effect of 10 nm Al{sub 2}O{sub 3} spacer on PL emission from ZnO thin films was analyzed. • Plasmonic enhancement of the PL emission was dependent on the D{sub c} and the spacer. • The highest 9-fold enhancement was obtained for the Al/ZnO sample with D{sub c} ∼333 nm. - Abstract: Surface plasmons (SPs) supported by Al nano-concave arrays with increasing interpore distance (D{sub c}) were used to enhance the ultraviolet light emission from ZnO thin films. Two sets of samples were prepared: in the first set the thin ZnO films were deposited directly on Al nanoconcaves (the Al/ZnO samples) and in the second set a 10 nm − Al{sub 2}O{sub 3} spacer was placed between the textured Al and the ZnO films (the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples). In the Al/ZnO samples the enhancement was limited by a nonradiative energy dissipation due to the Ohmic loss in the Al metal. However, for the ZnO layer deposited directly on Al nanopits synthesized at 150 V (D{sub c} = 333 ± 18 nm), the largest 9-fold enhancement was obtained by achieving the best energy fit between the near band-edge (NBE) emission from ZnO and the λ{sub (0,1)} SPP resonance mode. In the Al/Al{sub 2}O{sub 3}-ALD/ZnO samples the amplification of the UV emission was smaller than in the Al/ZnO samples due to a big energy mismatch between the NBE emission and the λ{sub (0,1)} plasmonic mode. The results obtained in this work indicate that better tuning of the NBE − λ{sub (0,1)} SPP resonance mode coupling is possible through a proper modification of geometrical parameters in the Al/Al{sub 2}O{sub 3}-ALD/ZnO system such as Al nano-concave spacing and the thickness of the corresponding layer. This approach will reduce the negative influence of the non-radiative plasmonic modes and most likely will lead to further

  17. Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films

    Science.gov (United States)

    Zhu, Huiqun; Li, Lekang; Li, Chunbo

    2016-03-01

    VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

  18. Influence of stress in ZnO thin films on its biosensing application.

    Science.gov (United States)

    Saha, Shibu; Tomar, Monika; Gupta, Vinay

    2015-11-01

    Highly c-axis oriented zinc oxide (ZnO) thin films deposited by radio frequency (RF) magnetron sputtering, under varying ambient atmosphere (oxygen and argon reactive gas mixture), were studied for biosensing application. The as-grown ZnO thin films were found to be under compressive stress. Glucose oxidase was chosen as model enzyme for studying biosensing response properties of the ZnO thin films. The present study reveals a good correlation between stress induced during thin film growth and its biosensing response characteristic. The bio-electrodes based on ZnO thin films which are under the influence of higher stress, show better sensitivity and higher enzyme loading along with a prolonged shelf life. The study highlights the importance of physical properties of thin film matrix on its biosensing application. Copyright © 2015 Elsevier Inc. All rights reserved.

  19. Fabrication of surface-patterned ZnO thin films using sol-gel methods and nanoimprint lithography

    OpenAIRE

    Dai, Shuxi; Wang, Yang; Zhang, Dianbo; Han, Xiao; Shi, Qing; Wang, Shujie; Du, Zuliang

    2011-01-01

    Surface-patterned ZnO thin films were fabricated by direct imprinting on ZnO sol and subsequent annealing process. The polymer-based ZnO sols were deposited on various substrates for the nanoimprint lithography and converted to surface-patterned ZnO gel films during the thermal curing nanoimprint process. Finally, crystalline ZnO films were obtained by subsequent annealing of the patterned ZnO gel films. The optical characterization indicates that the surface patterning of ZnO thin films can ...

  20. Texture in thin film silicides and germanides: A review

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: bob.deschutter@ugent.be; De Keyser, K.; Detavernier, C. [Department of Solid State Sciences, Ghent University, Ghent (Belgium); Lavoie, C. [IBM Research Division, T.J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

    2016-09-15

    Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice for contacting silicon based devices (over the years, CoSi{sub 2}, C54-TiSi{sub 2}, and NiSi have been adopted), while germanides are considered as a top candidate for contacting future germanium based electronics. Since also strain engineering through the use of Si{sub 1−x}Ge{sub x} in the source/drain/gate regions of MOSFET devices is an important technique for improving device characteristics in modern Si-based microelectronics industry, a profound understanding of the formation of silicide/germanide contacts to silicon and germanium is of utmost importance. The crystallographic texture of these films, which is defined as the statistical distribution of the orientation of the grains in the film, has been the subject of scientific studies since the 1970s. Different types of texture like epitaxy, axiotaxy, fiber, or combinations thereof have been observed in such films. In recent years, it has become increasingly clear that film texture can have a profound influence on the formation and stability of silicide/germanide contacts, as it controls the type and orientation of grain boundaries (affecting diffusion and agglomeration) and the interface energy (affecting nucleation during the solid-state reaction). Furthermore, the texture also has an impact on the electrical characteristics of the contact, as the orientation and size of individual grains influences functional properties such as contact resistance and sheet resistance and will induce local variations in strain and Schottky barrier height. This review aims to give a comprehensive overview of the scientific work that has been published in the field of texture studies on thin film silicide/germanide contacts.

  1. Influence of annealing on polymeric precursor derived ZnO thin films on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Choppali, Uma, E-mail: umachoppali@gmail.com [Department of Mathematics and Science, Collin College, Frisco, TX 75035 (United States); Kougianos, Elias; Mohanty, Saraju P. [NanoSystem Design Laboratory (NSDL), University of North Texas, Denton, TX 76203 (United States); Gorman, Brian P. [Colorado Center for Advanced Ceramics, Dept. of Metallurgical and Materials Engineering, Colorado School of Mines, Golden, CO 80401 (United States)

    2013-10-31

    Zinc oxide (ZnO) thin films on c-sapphire substrates were synthesized by spin-coating aqueous polymeric precursors. The effects of annealing at 1000 °C on crystallinity, surface morphology, and optical properties of ZnO thin films, with varying thicknesses, were studied. Single-layered ZnO thin films are polycrystalline with wurtzite structure and preferentially oriented along the (002) plane. X-ray diffraction pattern also reveals the presence of spinel zinc aluminate (ZnAl{sub 2}O{sub 4}) peaks. ZnO films have highly faceted granular morphology. Multilayered ZnO films, annealed twice at 1000 °C, do not exhibit any ZnO peaks but only ZnAl{sub 2}O{sub 4} peaks. Moreover, the surface morphology was smooth with ridges. These films do not exhibit the band gap or ultra-violet emission photoluminescence characteristics of ZnO. On annealing, there is an interfacial reaction between ZnO and sapphire resulting in ZnAl{sub 2}O{sub 4}. - Highlights: • Multilayer polymeric precursor derived ZnO film is annealed at 1000 °C on c-sapphire. • X-Ray diffraction (XRD) pattern of ZnO film annealed at 1000 °C shows ZnO peaks. • XRD pattern of ZnO films twice-annealed at 1000 °C shows only ZnAl{sub 2}O{sub 4} peaks. • Optical characterization of the multilayered films does not show ZnAl{sub 2}O{sub 4} peaks. • On annealing twice at 1000 °C, ZnO reacts with the c-sapphire to form ZnAl{sub 2}O{sub 4}.

  2. INFLUENCE OF POST ANNEALING ON SOL–GEL DEPOSITED ZnO THIN FILMS

    OpenAIRE

    HEMALATA BHADANE; EDMUND SAMUEL; DINESH KUMAR GAUTAM

    2014-01-01

    The effect of annealing temperature on sol–gel deposited ZnO thin films have been studied. The average crystallite size determined from XRD shows that the deposited films are nanocrystalline. FTIR confirms deposition of ZnO thin films. The transmittance of annealed ZnO thin films is greater than 80% in visible region with bandgap ranging from 3.25–3.19 eV. The films annealed at 450°C temperature shows lower resistivity value of 527.241 Ωm. The deposited nanocrystalline films are suitable for ...

  3. Growth of ZnO thin films on GaAs by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Elders, J.; Gardeniers, Johannes G.E.; Geretovsky, J.; Boyd, Ian W.

    1995-01-01

    ZnO thin films have been grown on GaAs substrates using the pulsed laser deposition technique with or without a photodeposited SiO2 buffer layer. The presence of the SiO2 layer has a beneficial effect on the crystalline quality of the grown ZnO films. Highly c-axis oriented ZnO films having a full

  4. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.

    2017-03-10

    Group III impurity doped ZnO thin films were deposited on MgAl2O3 substrates using a simple low temperature two-step deposition method involving atomic layer deposition and hydrothermal epitaxy. Films with varying concentrations of either Al, Ga, or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates with the addition of precursors salts in the hydrothermal growth solution, In-doped films were shown to saturate at relatively low concentrations. It was found that Ga-doped films showed the best performance in terms of electrical resistivity and optical absorbance when compared to those doped with In or Al, with a resistivity as low as 1.9 mΩ cm and an optical absorption coefficient of 441 cm−1 at 450 nm.

  5. Piezoelectric Response Evaluation of ZnO Thin Film Prepared by RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Cheng Da-Long

    2017-01-01

    Full Text Available The most important parameter of piezoelectric materials is piezoelectric coefficient (d33. In this study, the piezoelectric ZnO thin films were deposited on the SiNx/Si substrate. The 4 inches substrate is diced into 8 cm× 8 cm piece. During the deposition process, a zinc target (99.999 wt% of 2 inches diameter was used. The vertical distance between the target and the substrate holder was fixed at 5 cm. The piezoelectric response of zinc oxide (ZnO thin films were obtained by using a direct measurement system. The system adopts a mini impact tip to generate an impulsive force and read out the piezoelectric signals immediately. Experimentally, a servo motor is used to produce a fixed quantity of force, for giving an impact against to the piezoelectric film. The ZnO thin films were deposited using the reactive radio frequency (RF magnetron sputtering method. The electric charges should be generated because of the material’s extrusion. This phenomenon was investigated through the oscilloscope by one shot trigger. It was apparent that all ZnO films exhibit piezoelectric responses evaluated by our measurement system, however, its exhibit a significant discrepancy. The piezoelectric responses of ZnO thin film at various deposition positions were measured and the crystal structures of the sputtering pressure were also discussed. The crystalline characteristics of ZnO thin films are investigated through the XRD and SEM. The results show the ZnO thin film exhibits good crystalline pattern and surface morphology with controlled sputtering condition. The ZnO thin films sputtered using 2 inches target present various piezoelectric responses. With the exactly related position, a best piezoelectric response of ZnO thin film can be achieved.

  6. Natively textured ZnO grown by PECVD as front electrode material for amorphous silicon pin solar cells

    NARCIS (Netherlands)

    Löffler, J.; Schropp, R.E.I.; Groenen, Ft.; Van De Sanden, M.C.M.; Linden, J.L.

    2000-01-01

    Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by Expanding Thermal Plasma Chemical Vapor Deposition. Films deposited in the temperature regime from 150 to 350°C at a rate between 0.65 and 0.75 nm/s have been

  7. Influence of pH on ZnO nanocrystalline thin films prepared by sol ...

    Indian Academy of Sciences (India)

    Keywords. Sol–gel; ZnO nanocrystalline thin films; dip coating method. 1. Introduction. ZnO materials have attracted much interest due to wide direct bandgap of 3·37 eV and large exciton binding energy of. 60 meV. Semiconductor nanoparticles have attracted much attention in recent years due to novel optical, electrical ...

  8. Structural, optical and electrical properties of ZnO thin films prepared ...

    Indian Academy of Sciences (India)

    ZnO thin films have been prepared using zinc acetate precursor by spray pyrolytic decomposition of zinc acetate on glass substrates at 450 °C. Effect of precursor concentration on structural and optical properties has been investigated. ZnO films are polycrystalline with (002) plane as preferential orientation. The optical ...

  9. Heavy lithium-doped ZnO thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Lithium-doped ZnO thin films (ZnO : Li) were prepared by spray pyrolysis method on the glass substrates for ( = [Li]/[Zn]) value varied between 5 and 70%. Structural, electrical and optical properties of the samples were studied by X-ray diffraction (XRD), UV–Vis–NIR spectroscopy, scanning electron microscopy (SEM), ...

  10. Enhanced photocurrent and photocatalytic properties of porous ZnO thin film by Ag nanoparticles

    Science.gov (United States)

    Lv, Jianguo; Zhu, Qianqian; Zeng, Zheng; Zhang, Miao; Yang, Jin; Zhao, Min; Wang, Wenhao; Cheng, Yuebing; He, Gang; Sun, Zhaoqi

    2017-12-01

    ZnO thin films were deposited using an electrodeposition method and porous morphologies could be achieved by annealing treatment. A variety of Ag nanoparticles were loaded on the surface of the ZnO thin films. Surface morphology, chemical composition, crystal phase and optical properties were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), UV-vis spectrophotometer and micro-Raman spectroscopy. Evidence of Ag nanoparticles on the Ag-4/ZnO thin film was be verified by the SEM and XPS measurements. The XRD results indicated that the Ag nanoparticles had little effect on crystallinity of the thin films. The photoresponse and photocatalytic results indicated that the photocurrent and photocatalytic performance could be enhanced by moderate Ag nanoparticles modification on the surface of the ZnO thin film. The best photoresponse and photocatalytic activity in Ag-4/ZnO thin film results from the moderate Ag nanoparticles on the surface of ZnO thin film, which could enhanced separation and suppressed recombination of photogenerated electron-hole pairs.

  11. Selective growth of ZnO thin film nanostructures: Structure, morphology and tunable optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Krishnakanth, Katturi Naga; Sunandana, C. S. [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Rajesh, Desapogu, E-mail: rajesh.esapogu@gmail.com, E-mail: mperd@nus.edu.sg [School of Physics, University of Hyderabad, Hyderabad-50046 (India); Dept. of Mechanical Engineering, National University of Singapore (Singapore)

    2016-05-23

    The ZnO nanostructures (spherical, rod shape) have been successfully fabricated via a thermal evaporation followed by dip coating method. The pure, doped ZnO thin films were characterized by X-ray powder diffraction (XRD) and field emission scanning electron microscopy (FESEM) and UV-Vis spectroscopy, respectively. A possible growth mechanism of the spherical, rod shape ZnO nanostructures are discussed. XRD patterns revealed that all films consist of pure ZnO phase and were well crystallized with preferential orientation towards (002) direction. Doping by PVA, PVA+Cu has effective role in the enhancement of the crystalline quality and increases in the band gap.

  12. Radiation Hard and Self Healing Substrate Agnostic Nanocrystalline ZnO Thin Film Electronics

    Science.gov (United States)

    2017-04-14

    AFRL-AFOSR-JP-TR-2017-0031 Radiation- Hard & Self-Healing SubstrateAgnostic Nanocrystalline ZnO TFE 114097 Thomas Jackson PENNSYLVANIA STATE...2017 2. REPORT TYPE Final 3. DATES COVERED (From - To) 26 Sep 2011 to 25 Sep 2015 4. TITLE AND SUBTITLE Radiation- Hard and Self-Healing Substrate...are the most radiation- hard thin film transistors reported to date. 15. SUBJECT TERMS Nanocrystalline, ZnO Thin Film Electronics, Substrate-Agnostic

  13. Crystallinity Improvement of ZnO Thin Film on Different Buffer Layers Grown by MBE

    Directory of Open Access Journals (Sweden)

    Shao-Ying Ting

    2012-01-01

    Full Text Available The material and optical properties of ZnO thin film samples grown on different buffer layers on sapphire substrates through a two-step temperature variation growth by molecular beam epitaxy were investigated. The thin buffer layer between the ZnO layer and the sapphire substrate decreased the lattice mismatch to achieve higher quality ZnO thin film growth. A GaN buffer layer slightly increased the quality of the ZnO thin film, but the threading dislocations still stretched along the c-axis of the GaN layer. The use of MgO as the buffer layer decreased the surface roughness of the ZnO thin film by 58.8% due to the suppression of surface cracks through strain transfer of the sample. From deep level emission and rocking curve measurements it was found that the threading dislocations play a more important role than oxygen vacancies for high-quality ZnO thin film growth.

  14. Recent advances in ZnO nanostructures and thin films for biosensor applications: Review

    Energy Technology Data Exchange (ETDEWEB)

    Arya, Sunil K., E-mail: sunilarya333@gmail.com [Bioelectronics Program, Institute of Microelectronics, A-Star 11 Science Park Road, Singapore Science Park II, Singapore 117685 (Singapore); Saha, Shibu [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Ramirez-Vick, Jaime E. [Engineering Science and Materials Department, University of Puerto Rico, Mayaguez, PR 00681 (United States); Gupta, Vinay [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Bhansali, Shekhar [Department of Electrical and Computer Engineering, Florida International University, Miami, FL (United States); Singh, Surinder P., E-mail: singh.uprm@gmail.com [National Physical Laboratory, Dr K.S. Krishnan Marg, New Delhi 110012 (India)

    2012-08-06

    Graphical abstract: ZnO nanostructures have shown binding of biomolecules in desired orientation with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, their compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes them suitable candidate for future small integrated biosensor devices. This review highlights various approaches to synthesize ZnO nanostructures and thin films, and their applications in biosensor technology. Highlights: Black-Right-Pointing-Pointer This review highlights various approaches to synthesize ZnO nanostructures and thin films. Black-Right-Pointing-Pointer Article highlights the importance of ZnO nanostructures as biosensor matrix. Black-Right-Pointing-Pointer Article highlights the advances in various biosensors based on ZnO nanostructures. Black-Right-Pointing-Pointer Article describes the potential of ZnO based biosensor for new generation healthcare devices. - Abstract: Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO

  15. RHEED transmission mode and pole figures thin film and nanostructure texture analysis

    CERN Document Server

    Wang, Gwo-Ching

    2014-01-01

    This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not limited to single crystal epitaxial film growth. Details of the construction of RHEED pole figures and the interpretation of observed pole figures are presented.  Materials covered include metals, semiconductors, and thin insulators. This book also: Presents a new application of RHEED in the transmission mode Introduces a variety of textures from metals, semiconductors, compound semiconductors, and their characteristics in RHEED pole figures Provides examples of RHEED measurements o...

  16. Highly textured oxypnictide superconducting thin films on metal substrates

    Energy Technology Data Exchange (ETDEWEB)

    Iida, Kazumasa, E-mail: iida@nuap.nagoya-u.ac.jp; Kurth, Fritz; Grinenko, Vadim; Hänisch, Jens [Institute for Metallic Materials, IFW Dresden, D-01171 Dresden (Germany); Chihara, Masashi; Sumiya, Naoki; Hatano, Takafumi; Ikuta, Hiroshi [Department of Crystalline Materials Science, Nagoya University, Chikusa, Nagoya 464-8603 (Japan); Ichinose, Ataru; Tsukada, Ichiro [Central Research Institute of Electric Power Industry, 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196 (Japan); Matias, Vladimir [iBeam Materials, Inc., 2778A Agua Fria Street, Santa Fe, New Mexico 87507 (United States); Holzapfel, Bernhard [Institute for Technical Physics, Karlsruhe Institute of Technology, Hermann von Helmholtz-Platz 1, D-76344 Eggenstein-Leopoldshafen (Germany)

    2014-10-27

    Highly textured NdFeAs(O,F) thin films have been grown on ion beam assisted deposition-MgO/Y{sub 2}O{sub 3}/Hastelloy substrates by molecular beam epitaxy. The oxypnictide coated conductors showed a superconducting transition temperature (T{sub c}) of 43 K with a self-field critical current density (J{sub c}) of 7.0×10{sup 4} A/cm{sup 2} at 5 K, more than 20 times higher than powder-in-tube processed SmFeAs(O,F) wires. Albeit higher T{sub c} as well as better crystalline quality than Co-doped BaFe{sub 2}As{sub 2} coated conductors, in-field J{sub c} of NdFeAs(O,F) was lower than that of Co-doped BaFe{sub 2}As{sub 2}. These results suggest that grain boundaries in oxypnictides reduce J{sub c} significantly compared to that in Co-doped BaFe{sub 2}As{sub 2} and, hence biaxial texture is necessary for high J{sub c.}.

  17. Synthesis and characterization of Sb doped ZnO thin films for photodetector application

    Science.gov (United States)

    Mohite, S. V.; Rajpure, K. Y.

    2014-02-01

    We report properties of metal-semiconductor-metal (MSM) photoconductive UV detectors based on Sb-doped ZnO thin films. Highly c-axis oriented Sb-doped ZnO thin films were prepared by spray pyrolysis technique onto glass substrates. Optical properties and photocurrent measurements were carried out to study optoelectronic properties of Sb-doped ZnO thin films. These films are highly transparent in visible region and exhibit a steep absorption edge at 365 nm. The electrical resistivity measurement showed semiconducting behaviors of Sb-doped ZnO thin films. All Sb-doped ZnO thin films exhibit n-type electrical conductivity. I-V characteristics of photodetector devices were analyzed by applying 5 V bias. The 3% Sb doped ZnO photodetector shows higher responsivity of 5.1 A/W at 365 nm under 10 μW/cm2 photo-illumination. In order to check the maximal (for the rise) or minimal (for the fall) level of photocurrent, the results on photodetector for 30 s ON and OFF cycles of illumination have been reported.

  18. Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

    Directory of Open Access Journals (Sweden)

    Haridas D. Dhaygude

    2016-03-01

    Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

  19. Cytotoxic evaluation of nanostructured zinc oxide (ZnO) thin films and leachates.

    Science.gov (United States)

    Petrochenko, Peter E; Zhang, Qin; Bayati, Reza; Skoog, Shelby A; Phillips, K Scott; Kumar, Girish; Narayan, Roger J; Goering, Peter L

    2014-09-01

    Nanostructured ZnO films have potential use as coatings on medical devices and food packaging due to their antimicrobial and UV-protection properties. However, their influence on mammalian cells during clinical use is not fully understood. This study investigated the potential cytotoxicity of ZnO thin films in RAW 264.7 macrophages. ZnO thin films (∼96nm thick with a 50nm grain) were deposited onto silicon wafers using pulsed laser deposition. Cells grown directly on ZnO thin film coatings exhibited less toxicity than cells exposed to extracts of the coatings. Cells on ZnO thin films exhibited a 43% and 68% decrease in cell viability using the MTT and 7-AAD/Annexin V flow cytometry assays, respectively, after a 24-h exposure as compared to controls. Undiluted 100% 24- and 48-h extracts decreased viability by 89%, increased cell death by LDH release to 76% 24h after treatment, and increased ROS after 5-24h of exposure. In contrast, no cytotoxicity or ROS were observed for 25% and 50% extracts, indicating a tolerable concentration. Roughly 24 and 34μg/m(2) Zn leached off the surfaces after 24 and 48h of incubation, respectively. ZnO coatings may produce gradual ion release which becomes toxic after a certain level and should be evaluated using both direct exposure and extraction methods. Published by Elsevier Ltd.

  20. Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity.

    Directory of Open Access Journals (Sweden)

    Kim Guan Saw

    Full Text Available The current-voltage characteristics of Ni contacts with the surfaces of ZnO thin films as well as single crystal (0001 ZnO substrate are investigated. The ZnO thin film shows a conversion from Ohmic to rectifying behavior when annealed at 800°C. Similar findings are also found on the Zn-polar surface of (0001 ZnO. The O-polar surface, however, only shows Ohmic behavior before and after annealing. The rectifying behavior observed on the Zn-polar and ZnO thin film surfaces is associated with the formation of nickel zinc oxide (Ni1-xZnxO, where x = 0.1, 0.2. The current-voltage characteristics suggest that a p-n junction is formed by Ni1-xZnxO (which is believed to be p-type and ZnO (which is intrinsically n-type. The rectifying behavior for the ZnO thin film as a result of annealing suggests that its surface is Zn-terminated. Current-voltage measurements could possibly be used to determine the surface polarity of ZnO thin films.

  1. Growth and Properties of ZnO:Al on Textured Glass for Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Marta Lluscà

    2014-01-01

    Full Text Available Aluminium induced texturing (AIT method has been used to texture glass substrates in order to enhance the photon absorption in thin film solar cells. The resultant glass roughness has been analyzed by varying the AIT process parameters and it has been found that the deposition method of Al is a decisive factor in tuning the texture. Two types of textures, a soft (texture E and a rough texture (texture S, were achieved from the thermally evaporated and sputtered Al layers through AIT process. Aluminium-doped zinc oxide (AZO layers of different thickness were deposited over both textures and over smooth glass. Haze values above 30% were obtained for texture S + AZO and above 10% for texture E + AZO. The resultant morphologies were free from sharp edges or deep valleys and the transparency and the resistivity values were also good enough to be used as front contact for thin film solar cells. In order to demonstrate the light absorption enhancement in a solar cell device, 200 nm of a-Si:H followed by 300 nm of Ag were grown over the textured and smooth substrates with AZO, and an optical absorption enhancement of 35% for texture E and 53% for texture S was obtained in comparison to the smooth substrate.

  2. Preparation of cadmium-doped ZnO thin films by SILAR and their ...

    Indian Academy of Sciences (India)

    Cadmium-doped zinc oxide (Cd : ZnO) thin films were deposited from sodium zincate bath following a chemical dipping technique called successive ion layer adsorption and ... SILAR; Cd:ZnO thin film; X-ray line broadening; SEM; optical bandgap. 1. Introduction. Zinc oxide possesses a unique position among semiconduct-.

  3. Epitaxial growth of znO nanowires over the ZnO thin films deposited on the Si and sapphire substrates.

    Science.gov (United States)

    Park, No-Kuk; Lee, You Jin; Jung, Ji Young; Lee, Won Guen; Bae, Young Je; Yoon, Suk Hoon; Han, Gi Bo; Ryu, Si Ok; Lee, Tae Jin

    2008-09-01

    Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.

  4. Synthesis of Imine-Bearing ZnO Nanoparticle Thin Films and Characterization of Their Structural, Morphological and Optical Properties.

    Science.gov (United States)

    Kaur, Narinder; Sharma, Sanjeev K; Kim, Deuk Young; Sharma, Hemant; Singh, Narinder

    2015-10-01

    We are presenting the first report on the fabrication of imine-bearing ZnO nanoparticle thin films grown on Corning glass by spin coating. The sol was prepared by dissolving imine-bearing ZnO nanoparticles in dimethylsulfoxide (DMSO). The thickness of the films was manipulated to be 125-200 nm. The X-ray diffraction (XRD) analysis showed hexagonal wurtzite structure of imine-bearing ZnO nanoparticles thin films with a (002) preferential orientation. The stretching of chemical bonds of the imine linkage and Zn-O in imine-bearing ZnO nanoparticle thin films was confirmed by Fourier transform infrared spectroscopy (FTIR). The grain size of the films increased with increasing the thickness of the films due to the number of coatings and subsequently dried at 200 °C. The transmittance of imine-bearing ZnO nanoparticle thin films was observed to be ≥94%, which was in close agreement to pure ZnO thin films in the visible region. The bandgap of imine-bearing ZnO nanoparticle thin films (3.04 eV), evaluated from Tauc's plot, was observed to be lower than that of pure ZnO (3.21 eV), which is attributed to the interaction of the ZnO nanoparticles with the imine receptor.

  5. Fabrication of superhydrophobic surface of hierarchical ZnO thin films by using stearic acid

    Science.gov (United States)

    Wang, Yanfen; Li, Benxia; Xu, Chuyang

    2012-01-01

    Flower-like hierarchical ZnO microspheres were successfully synthesized by a simple, template-free, and low-temperature aqueous solution route. The morphology and microstructure of the ZnO microspheres were examined by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The bionic films with hydrophobicity were fabricated by the hierarchical ZnO microspheres modified by stearic acid. It was found that the hydrophobicity of the thin films was very sensitive to the added amount of stearic acid. The thin films modified with 8% stearic acid took on strong superhydrophobicity with a water contact angle (CA) almost to be 178° and weak adhersion. The remarkable superhydrophobicity could be attributed to the synergistic effect of micro/nano hierarchical structure of ZnO and low surface energy of stearic acid.

  6. Fabrication of nanostructured Al-doped ZnO thin film for methane sensing applications

    Energy Technology Data Exchange (ETDEWEB)

    Shafura, A. K., E-mail: shafura@ymail.com; Azhar, N. E. I.; Uzer, M.; Mamat, M. H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Sin, N. D. Md. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Cawangan Johor, Kampus Pasir Gudang, 81750 Masai, Johor (Malaysia); Saurdi, I. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); Faculty of Electrical Engineering, Universiti Teknologi MARA Sarawak, Kampus Kota Samarahan Jalan Meranek, Sarawak (Malaysia); Shuhaimi, A. [Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, University ofMalaya, 50603 Kuala Lumpur (Malaysia); Alrokayan, Salman A. H.; Khan, Haseeb A. [Research Chair of Targeting and Treatment Cancer Using Nanoparticles, Department Of Biochemistry, College Of Science, King Saud University, P.O: 2454 Riyadh 11451 (Saudi Arabia); Rusop, M., E-mail: nanouitm@gmail.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science, Universiti Teknologi MARA, 40450 Shah Alam, Selangor (Malaysia)

    2016-07-06

    CH{sub 4} gas sensor was fabricated using spin-coating method of the nanostructured ZnO thin film. Effect of annealing temperature on the electrical and structural properties of the film was investigated. Dense nanostructured ZnO film are obtained at higher annealing temperature. The optimal condition of annealing temperature is 500°C which has conductivity and sensitivity value of 3.3 × 10{sup −3} S/cm and 11.5%, respectively.

  7. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  8. Structural, Morphological, and LPG Sensing Properties of Al-Doped ZnO Thin Film Prepared by SILAR

    Directory of Open Access Journals (Sweden)

    Shampa Mondal

    2013-01-01

    Full Text Available Undoped and aluminum doped zinc oxide (AZO thin films were deposited on glass substrates by successive ion layer adsorption and reaction (SILAR technique from ammonium zincate complex. The thin films are characterized by X-ray diffraction (XRD and scanning electron microscopy (SEM for their structural and morphological studies. Both undoped and Al-doped film show strong preferred c-axis orientation. The texture coefficient (TC of the film along (002 direction increases due to Al incorporation. SEM micrograph shows round shaped particles for pure ZnO. However AZO films show particles with off spherical shape and compact interconnected grains. Sensitivity of the film in presence of 80% LEL (lower explosive limit of LPG increases with temperature and is maximum at 325°C. Significantly high sensitivity of 87% with reasonably fast response was observed for 1% Al-doped ZnO (AZO film in presence of 1.6 vol% LPG at 325°C.

  9. Preparation and characterization of ALD deposited ZnO thin films studied for gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Boyadjiev, S.I., E-mail: boiajiev@gmail.com [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Georgieva, V. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Yordanov, R. [Department of Microelectronics, Technical University of Sofia, 8 Kliment Ohridski Blvd., 1756 Sofia (Bulgaria); Raicheva, Z. [Georgi Nadjakov Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia (Bulgaria); Szilágyi, I.M. [MTA-BME Technical Analytical Chemistry Research Group, Szent Gellért tér 4, Budapest, H-1111 (Hungary); Budapest University of Technology and Economics, Department of Inorganic and Analytical Chemistry, Szent Gellért tér 4, Budapest, H-1111 (Hungary)

    2016-11-30

    Highlights: • For the first time the gas sensing towards NO{sub 2} of very thin ALD ZnO films is studied. • The very thin ALD ZnO films showed excellent sensitivity to NO{sub 2} at room temperature. • These very thin film ZnO-based QCM sensors very well register even low concentrations. • The sensors have fully reversible sorption and are able to be recovered in short time. • Described fast and cost-effective ALD deposition of ZnO thin films for QCM gas sensor. - Abstract: Applying atomic layer deposition (ALD), very thin zinc oxide (ZnO) films were deposited on quartz resonators, and their gas sensing properties were studied using the quartz crystal microbalance (QCM) method. The gas sensing of the ZnO films to NO{sub 2} was tested in the concentration interval between 10 and 5000 ppm. On the basis of registered frequency change of the QCM, for each concentration the sorbed mass was calculated. Further characterization of the films was carried out by various techniques, i.e. by SEM-EDS, XRD, ellipsometry, and FTIR spectroscopy. Although being very thin, the films were gas sensitive to NO{sub 2} already at room temperature and could register very well as low concentrations as 100 ppm, while the sorption was fully reversible. Our results for very thin ALD ZnO films show that the described fast, simple and cost-effective technology could be implemented for producing gas sensors working at room temperature and being capable to detect in real time low concentrations of NO{sub 2}.

  10. Temperature annealing effect on structural and optical properties of ZnO thin films prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Elamal Bouzit S.

    2013-09-01

    Full Text Available ZnO thin films have been synthesized by sol-gel method. The effect of the annealing temperature on the morphological, structural and optical properties of the ZnO thin films was investigated. A good crystllinity and good transmittance in the visible spectrum was obtained at the annealing temperature of 400°C.

  11. Reversible ferromagnetism study in un-doped ZnO thin films.

    Science.gov (United States)

    Xia, D X; Zhang, W H; Xie, F Y; Chen, J; Xu, J B

    2011-12-01

    Room temperature ferromagnetism in pure ZnO thin films prepared by spin-coating method was observed. X-ray photoelectron spectroscopy and inductively coupled plasma-mass spectrometry showed no or extremely little presence of impurities, which were unlikely to be responsible for the large magnetization moment observed. In order to study the origin of ferromagnetism, ZnO thin films were rapidly annealed in N2 and O2 ambient in a repetitive way. Electrical and magnetic performance after each annealing was measured. It is found that ferromagnetism is diminished and re-appeared, in accordance with the decrease and increase of conductivity. Cathodoluminescence spectra show evidence of reversible variation of oxygen vacancy defect in the annealing process. These results provide strong evidence that oxygen vacancies play a significant role in inducing ferromagnetism in ZnO thin films.

  12. Microstructural, chemical and textural characterization of ZnO nanorods synthesized by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Fuentes-Cobas, L.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C. [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico); Pérez-García, S.A. [Centro de Investigación en Materiales Avanzados, S.C., Unidad Monterrey, Apodaca, Nuevo León 66600 (Mexico); Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx [Centro de Investigación en Materiales Avanzados, S.C., Chihuahua, Chihuahua 31109 (Mexico)

    2014-12-15

    ZnO nanorods were synthesized by aerosol assisted chemical vapor deposition onto TiO{sub 2} covered borosilicate glass substrates. Deposition parameters were optimized and kept constant. Solely the effect of different nozzle velocities on the growth of ZnO nanorods was evaluated in order to develop a dense and uniform structure. The crystalline structure was characterized by conventional X-ray diffraction in grazing incidence and Bragg–Brentano configurations. In addition, two-dimensional grazing incidence synchrotron radiation diffraction was employed to determine the preferred growth direction of the nanorods. Morphology and growth characteristics analyzed by electron microscopy were correlated with diffraction outcomes. Chemical composition was established by X-ray photoelectron spectroscopy. X-ray diffraction results and X-ray photoelectron spectroscopy showed the presence of wurtzite ZnO and anatase TiO{sub 2} phases. Morphological changes noticed when the deposition velocity was lowered to the minimum, indicated the formation of relatively vertically oriented nanorods evenly distributed onto the TiO{sub 2} buffer film. By coupling two-dimensional X-ray diffraction and computational modeling with ANAELU it was proved that a successful texture determination was achieved and confirmed by scanning electron microscopy analysis. Texture analysis led to the conclusion of a preferred growth direction in [001] having a distribution width Ω = 20° ± 2°. - Highlights: • Uniform and pure single-crystal ZnO nanorods were obtained by AACVD technique. • Longitudinal and transversal axis parallel to the [001] and [110] directions, respectively. • Texture was determined by 2D synchrotron diffraction and electron microscopy analysis. • Nanorods have its [001] direction distributed close to the normal of the substrate. • Angular spread about the preferred orientation is 20° ± 2°.

  13. EPD-deposited ZnO thin films: a review

    Energy Technology Data Exchange (ETDEWEB)

    Verde, M.

    2014-07-01

    ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD) constitutes an economical, eco friendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized. (Author)

  14. Effects of high temperature and film thicknesses on the texture evolution in Ag thin films

    Science.gov (United States)

    Eshaghi, F.; Zolanvari, A.

    2017-04-01

    In situ high-temperature X-ray diffraction techniques were used to study the effect of high temperatures (up to 600°C) on the texture evolution in silver thin films. Ag thin films with different thicknesses of 40, 80, 120 and 160nm were sputtered on the Si(100) substrates at room temperature. Then, microstructure of thin films was determined using X-ray diffraction. To investigate the influence of temperature on the texture development in the Ag thin films with different thicknesses, (111), (200) and (220) pole figures were evaluated and orientation distribution functions were calculated. Minimizing the total energy of the system which is affected by competition between surface and elastic strain energy was a key factor in the as-deposited and post annealed thin films. Since sputtering depositions was performed at room temperature and at the same thermodynamic conditions, the competition growth caused the formation of the {122} fiber texture in as-deposited Ag thin films. It was significantly observed that the post annealed Ag thin films showed {111} fiber texture varied with the thickness of thin films. Increasing thin film thickness from 40nm to 160nm led to decreasing the intensity of the {111} fiber texture.

  15. Controllable growth and characterization of highly aligned ZnO nanocolumnar thin films

    Energy Technology Data Exchange (ETDEWEB)

    Onuk, Zuhal [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Rujisamphan, Nopporn [Nanoscience and Nanotechnology Graduate Program, Faculty of Science, King Mongkut’s University of Technology Thonburi, 10140, Bangkok (Thailand); Theoretical and Computational Science Center (TaCS), Faculty of Science, King Mongkut’s University of Technology Thonburi, Bangkok 10140 (Thailand); Murray, Roy [Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States); Bah, Mohamed [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Tomakin, Murat [Department of Physics, Recep Tayyip Erdogan University, Rize, 53100 (Turkey); Shah, S.Ismat, E-mail: ismat@udel.edu [Department of Materials Science and Engineering, University of Delaware, Newark, DE, 19716 (United States); Department of Physics and Astronomy, University of Delaware, Newark, DE, 19716 (United States)

    2017-02-28

    Graphical abstract: Scanning electron micrographs of the top view surfaces (left column) and cross sections of sputtered ZnO thin films prepared at various Ar:O{sub 2} ratios: (a) and (b) 10:0, (c) and (d) 7.5:2.5, (e) and (f) 5:5, (g) and (h) 2.5:7.5. - Highlights: • Nanocolumnar ZnO films were prepared by controlling the argon-oxygen sputtering gas ratio. • Oxygen partial pressure affects the band gap alignment of the ZnO films. • Optical transmission spectroscopy and XPS were used to study band gap shifts. - Abstract: We investigated the effects of growth conditions during magnetron sputtering on the structural, morphological, and optical properties of nanostructured ZnO thin films. Undoped ZnO thin films are deposited onto p-type Si (100) and corning 7059 glass substrates by RF magnetron sputtering using a ZnO target in combination with various Ar-O{sub 2} sputtering gas mixtures at room temperature. The effect of the partial pressure of oxygen on the morphology of ZnO thin film structure and band alignment were investigated. Thickness, and therefore the growth rate of the samples measured from the cross-sectional SEM micrographs, is found to be strongly correlated with the oxygen partial pressure in the sputtering chamber. The optical transmittance spectrometry results show that the absorption edge shifts towards the longer wavelength at higher oxygen partial pressure. X-ray photoelectron spectroscopy (XPS) used for determining the surface chemical structure and valence band offsets show that conduction band can be controlled by changing the sputtering atmosphere.

  16. Defects Induced Room Temperature Ferromagnetism in ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Xiao Zhang

    2014-01-01

    Full Text Available Polycrystalline ZnO thin films are prepared by the co-sputtering method under different oxygen partial pressures. Films deposited in pure argon gas exhibit ferromagnetism, whereas other films deposited under different oxygen partial pressures are diamagnetism. XPS results show the presence of Zn interstitial and oxygen vacancy in all of samples. Further analysis indicates that Zn interstitial may play an important role in triggering magnetic order on the undoped ZnO thin films by inducing an alteration of electronic configuration.

  17. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  18. Decoupled front/back dielectric textures for flat ultra-thin c-Si solar cells

    NARCIS (Netherlands)

    Isabella, O.; Vismara, R.; Ingenito, A.; Rezaei, N.; Zeman, M.

    2016-01-01

    The optical analysis of optically-textured and electrically-flat ultra-thin crystalline silicon (c-Si) slabs is presented. These slabs were endowed with decoupled front titanium-dioxide (TiO2) / back silicon-dioxide (SiO2) dielectric textures and were studied as function of two types of back

  19. Designing optimized nano textures for thin-film silicon solar cells

    NARCIS (Netherlands)

    Jäger, K.; Fischer, M.; Van Swaaij, R.A.C.M.M.; Zeman, M.

    2013-01-01

    Thin-film silicon solar cells (TFSSC), which can be manufactured from abundant materials solely, contain nano-textured interfaces that scatter the incident light. We present an approximate very fast algorithm that allows optimizing the surface morphology of two-dimensional nano-textured interfaces.

  20. Textured ZnO films from evaporation-triggered aggregation of nanocrystal dispersions and their use in solar cells.

    Science.gov (United States)

    Yan, Junfeng; Lian, Qing; Mokhtar, Muhamad Z; Milani, Amir H; Whittaker, Eric; Hamilton, Bruce; O'Brien, Paul; Nguyen, Nam T; Saunders, Brian R

    2017-10-11

    Due to its high electron mobility, good stability and potential for low-temperature synthesis ZnO has received considerable attention for use in solar cells, photodetectors and sensors. Whilst there have been reports involving the formation ZnO films with porous morphologies the majority of those have involved elaborate or time-consuming preparation methods. In this study we investigate a simple new method for preparing textured porous ZnO (tp-ZnO) films. We used colloidal instability triggered by the evaporation of a volatile stabilising ligand during spin-coating of a ZnO nanocrystal (NC) dispersion to deposit crack-free tp-ZnO films. The porosity of the tp-ZnO films was 56% and they could be prepared using amine-based ligands with boiling points less than or equal to 78 °C. To demonstrate the ability to use the tp-ZnO films as electron acceptors they were infiltrated with poly(3-hexylthiophene) (P3HT) and solar cells prepared. The power conversion efficiencies of the tp-ZnO/P3HT devices reached values that were three times higher than a control bilayer ZnO/P3HT device prepared using a sol-gel derived ZnO film. Because our method used a low temperature treatment and ZnO films are used in a wide variety of third-generation solar cells, the new tp-ZnO films introduced here may offer a low cost method for improving the efficiency of other solar cells.

  1. Synthesis and conductivity enhancement of Al-doped ZnO nanorod array thin films.

    Science.gov (United States)

    Hsu, Chih-Hsiung; Chen, Dong-Hwang

    2010-07-16

    Al-doped ZnO (AZO) nanorod array thin films with various Al/Zn molar ratios were synthesized by chemical bath deposition. The resultant AZO nanorods were well-aligned at the glass substrate, growing vertically along the c-axis [001] direction. In addition, they had an average diameter of 64.7 +/- 16.8 nm and an average length of about 1.0 microm with the structure of wurtzite-type ZnO. Analyses of energy dispersive x-ray spectra and x-ray photoelectron spectra indicated that Al atoms had been doped into the ZnO crystal lattice. The doping of Al atoms did not result in significant changes in the structure and crystal orientation, but the electrical resistivity was found to increase first and then decrease with increasing Al content owing to the increase of carrier concentration and the decrease of mobility. In addition, the transmission in the visible region increased but the increase was reduced at higher Al doping levels. After hydrogen treatment, the morphology of the AZO nanorod array thin films remained unchanged. However, the electrical resistivity decreased significantly due to the formation of oxygen vacancies and interstitial hydrogen atoms. When the real Al/Zn molar ratio was about 3.7%, the conductivity was enhanced about 1000 times and a minimum electrical resistivity of 6.4 x 10( - 4) Omega cm was obtained. In addition, the transmission of the ZnO nanorod array thin film in the visible region was significantly increased but the increase was less significant for the AZO nanorod array thin film, particularly at higher Al doping levels. In addition, the current-voltage curves of the thin film devices with ZnO or AZO nanorod arrays revealed that AZO had a higher current response than ZnO and hydrogen treatment led to a more significant enhancement of current responses (about 100-fold).

  2. DNA-templated synthesis of ZnO thin layers and nanowires.

    Science.gov (United States)

    Atanasova, Petia; Weitz, R Thomas; Gerstel, Peter; Srot, Vesna; Kopold, Peter; van Aken, Peter A; Burghard, Marko; Bill, Joachim

    2009-09-09

    In this paper, we report a novel synthetic approach towards electrically conductive ZnO nanowires close to ambient conditions using lambda-DNA as a template. Initially, the suitability of DNA to assemble ZnO nanocrystals into thin coatings was investigated. The ZnO nanowires formed on stretched and aligned lambda-DNA molecules were prepared via chemical bath deposition (CBD) of zinc acetate in methanol solution in the presence of polyvinylpyrrolidone (PVP). After 10 deposition cycles, the nanowires exceed 10 microm in length and the height can be varied from 12 to around 40 nm. The nanocrystalline structure of the ZnO wires was confirmed by high-resolution transmission electron microscopy (HRTEM). The electrical conductivity was found to be of the order of several Omega cm at room temperature in two terminal measurements.

  3. DFT calculations on electronic properties of ZnO thin films deposited by spray pyrolysis

    Energy Technology Data Exchange (ETDEWEB)

    Cordeiro, J.M.; Reynoso, V.C.; Azevedo, D.H.M. [Universidade Estadual Paulista Julio de Mesquita Filho (UNESP), SP (Brazil)

    2016-07-01

    Full text: Introduction - Thin films of Zinc oxide (ZnO) has a wide range of technological applications, as transparent conducting electrodes in solar cells, flat panel displays, and sensors, for example. More recently applications in optoelectronics, like light emitter diodes and laser diodes, due to its large band gap, are been explored. Studies of ZnO thin films are important for these applications. Methodology - In this study thin films of ZnO have been deposited by spray pyrolysis on glass substrate. The films were characterized by XRD and UV-VIS techniques and the electronic properties as a function of the film thickness have been investigated by DFT calculations with B3LYP hybrid potential implemented in the CRYSTAL09 code. Results - The diffractograms obtained for the ZnO thin films as a function of the thickness are shown. The films exhibit a hexagonal wurtzite structure with preferred c-axis orientation in (002) direction of ZnO crystal. A quantum mechanical approach based on the periodic Density Functional Theory (DFT), with B3LYP hybrid potential was used to investigate the electronic structure of the films as a function of the thickness. The CRYSTAL09 code has been used for the calculations on the wurtzite hexagonal structure of ZnO - spatial group P63mc. For optimizing the geometry of the pure ZnO crystal, the experimental lattice parameters were got as follows: a= 0.325 nm, b= 0.325 nm, c= 0.5207 nm with c/a= 1.602. Considering to the calculations of the band structure, it is suggested that the semiconducting properties of ZnO arises from the overlapping of the 4s orbital of the conducting band of Zn and the 2p orbital of the top of valence band of O. Conclusions - The structure of ZnO thin film deposited on glass substrate present preferential orientation in (002) direction. Variation in the optical properties as a function of the film thickness was observed. The band gap energy was determined from optical analysis to be ∼ 3.27 eV. The refractive

  4. Synthesis, structural and optical characterization of undoped, N-doped ZnO and co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Pathak, Trilok Kumar, E-mail: tpathak01@gmail.com; Kumar, R.; Purohit, L. P., E-mail: proflppurohitphys@gmail.com [Semiconductor Research Lab., Department of Physics, Gurukula Kangri University, Haridwar (India)

    2015-05-15

    ZnO, N-doped ZnO and Al-N co-doped ZnO thin films were deposited on ITO coated corning glass by spin coater using sol-gel method. The films were annealed in air at 450°C for one hour. The crystallographic structure and morphology of the films were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM) respectively. The X-ray diffraction results confirm that the thin films are of wurtzite hexagonal with a very small distortion. The optical properties were investigated by transmission spectra of different films using spectrophotometer (Shimadzu UV-VIS-NIR 3600). The results indicate that the N doped ZnO thin films have obviously enhanced transmittance in visible region. Moreover, the thickness of the films has strong influences on the optical constants.

  5. Structural characterization of supported nanocrystalline ZnO thin films prepared by dip-coating

    Energy Technology Data Exchange (ETDEWEB)

    Casanova, J.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Heredia, E.A., E-mail: eheredia@citedef.gob.ar [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Bojorge, C.D.; Canepa, H.R. [CITEDEF-CINSO-CONICET Centro de Investigaciones en Solidos, Juan B. de La Salle 4397, B1603ALO, Villa Martelli, Buenos Aires (Argentina); Kellermann, G. [Departamento de Fisica, Universidade Federal do Parana, Curitiba, PR (Brazil); Craievich, A.F. [Instituto de Fisica, Universidade de Sao Paulo, Cidade Universitaria, Sao Paulo, SP (Brazil)

    2011-09-15

    Nanocrystalline ZnO thin films prepared by the sol-gel dip-coating technique were characterized by grazing incidence X-ray diffraction (GIXD), atomic force microscopy (AFM), X-ray reflectivity (XR) and grazing incidence small-angle X-ray scattering (GISAXS). The structures of several thin films subjected to (i) isochronous annealing at 350, 450 and 550 deg. C, and (ii) isothermal annealing at 450 deg. C during different time periods, were characterized. The studied thin films are composed of ZnO nanocrystals as revealed by analysing several GIXD patterns, from which their average sizes were determined. Thin film thickness and roughness were determined from quantitative analyses of AFM images and XR patterns. The analysis of XR patterns also yielded the average density of the studied films. Our GISAXS study indicates that the studied ZnO thin films contain nanopores with an ellipsoidal shape, and flattened along the direction normal to the substrate surface. The thin film annealed at the highest temperature, T = 550 deg. C, exhibits higher density and lower thickness and nanoporosity volume fraction, than those annealed at 350 and 450 deg. C. These results indicate that thermal annealing at the highest temperature (550 deg. C) induces a noticeable compaction effect on the structure of the studied thin films.

  6. Role of vacancy defects in Al doped ZnO thin films for optoelectronic devices

    Science.gov (United States)

    Rotella, H.; Mazel, Y.; Brochen, S.; Valla, A.; Pautrat, A.; Licitra, C.; Rochat, N.; Sabbione, C.; Rodriguez, G.; Nolot, E.

    2017-12-01

    We report on the electrical, optical and photoluminescence properties of industry-ready Al doped ZnO thin films grown by physical vapor deposition, and their evolution after annealing under vacuum. Doping ZnO with Al atoms increases the carrier density but also favors the formation of Zn vacancies, thereby inducing a saturation of the conductivity mechanism at high aluminum content. The electrical and optical properties of these thin layered materials are both improved by annealing process which creates oxygen vacancies that releases charge carriers thus improving the conductivity. This study underlines the effect of the formation of extrinsic and intrinsic defects in Al doped ZnO compound during the fabrication process. The quality and the optoelectronic response of the produced films are increased (up to 1.52 mΩ \\cdotcm and 3.73 eV) and consistent with the industrial device requirements.

  7. Absorption enhancement in ultra-thin textured AlGaAs films

    Energy Technology Data Exchange (ETDEWEB)

    Boroditsky, Misha [Physics Department, University of California, Los Angeles, CA (United States); Ragan, Regina [Electrical Engineering Department, California Institute of Technology, Los Angeles, CA 90095-1594 (United States); Yablonovitch, Eli [Electrical Engineering Department, University of California, M/S 56-125B, Engineering IV, Los Angeles, CA 90095-1594 (United States)

    1999-02-22

    We have studied light randomization and the absorption enhancement in textured ultra-thin Al{sub x}Ga{sub 1-x}As films, with a thickness corresponding to a few optical wavelengths. A correlation between the degree of light randomization and trapping, with the scale length of the texturization geometry was found. The observed absorption enhancement corresponds to 90% of the best possible theoretical value, or 90% light randomization. A modified photon gas model is proposed to calculate the light trapping and absorption at the band edge in the textured thin films

  8. EPD-deposited ZnO thin films: a review

    Directory of Open Access Journals (Sweden)

    Verde, M.

    2014-08-01

    Full Text Available ZnO-based materials and specifically ZnO films with tailored morphology have been subjected to extensive research in the past few years due to their high potential for multiple prospective applications, mainly in electronics. Electrophoretic Deposition (EPD constitutes an economical, ecofriendly, low energy consuming and easily scalable alternative to the high energy consuming evaporative techniques which are commonly used for the obtaining of these ZnO films. For its application, however, the use of stable, well dispersed suspensions is a necessary requirement, and thus a thorough study of their colloidal chemistry is essential. In this work the main contributions to the study of colloidal chemistry of ZnO nanoparticle suspensions and their shaping into ZnO films by EPD are summarized.Los materiales basados en ZnO y en particular las láminas de ZnO con morfología controlada han sido objeto en los últimos años de numerosas investigaciones debido al elevado potencial que presentan para múltiples aplicaciones emergentes, principalmente en electrónica. La deposición electroforética (EPD constituye un método alternativo económico, ecológico, de bajo coste energético y elevada escalabilidad para la producción de éstas láminas de ZnO, en contraste con las técnicas evaporativas empleadas habitualmente, las cuales presentan un elevado impacto energético, así como una escalabilidad complicada. Para su aplicación, sin embargo, y puesto que el principal requisito es el uso de suspensiones estables y bien dispersas, es necesario un detallado estudio de la coloidequímica de las mismas. En este trabajo se resumen las aportaciones más relevantes relativas al estudio de los distintos parámetros que afectan a la estabilidad coloidal de las suspensiones de nanopartículas de ZnO y al proceso de obtención de las láminas mediante EPD a partir de las mismas.

  9. Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

    Directory of Open Access Journals (Sweden)

    I. Saurdi

    2014-01-01

    Full Text Available Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm, high average transmittance (96% in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.

  10. Using the hydrothermal method to grow p-type ZnO nanowires on Al-doped ZnO thin film to fabricate a homojunction diode.

    Science.gov (United States)

    Tseng, Yung-Kuan; Hung, Meng-Chun; Su, Shun-Lung; Li, Sheng-Kai

    2014-10-01

    In this study, the hydrothermal method is used to grow phosphorus-doped ZnO nanowires on Si/SiO2 substrates deposited with Al-doped ZnO thin film. This structure forms a homogeneous p-n junction. In this study, we are the pioneers to use ammonium hypophosphite (NH4H2PO2) as a source of phosphorus to prepare the precursor solution. Ammonium hypophosphite of different concentration levels is used to observe its effects on the growth of nanowires. The results show that the precursor solution prepared from ammonium hypophosphite can produce good crystalline ZnO nanowires while there is no linear relationship between the amounts and concentration levels of phosphorus doped into the nanowires. Whether the phosphorus-doped ZnO nanowires have the characteristics of a p-type semiconductor is indirectly verified by measuring whether the p-n junction made up of Al-doped ZnO thin film and phosphorus-doped ZnO nanowires shows rectifying behavior. I-V measurements are made on the specimens. The results show good rectifying behavior, proving that the phosphorus-doped ZnO nanowires and Al-doped AZO films have p-type and n-type semiconductor properties, constituting a good p-n junction. This result also proves that ammonium hypophosphite is a better source of phosphorus in the hydrothermal method to synthesize phosphorus-doped ZnO nanowires.

  11. Coexistence of colossal stress and texture gradients in sputter deposited nanocrystalline ultra-thin metal films

    Energy Technology Data Exchange (ETDEWEB)

    Kuru, Yener [Department of Metallurgical and Materials Engineering, Middle East Technical University, Dumlupinar Bulv. No. 1, 06800 Ankara (Turkey); Welzel, Udo [Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Mittemeijer, Eric J. [Max Planck Institute for Intelligent Systems, Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Institute for Materials Science, University of Stuttgart, Heisenbergstrasse 3, D-70569 Stuttgart (Germany)

    2014-12-01

    This paper demonstrates experimentally that ultra-thin, nanocrystalline films can exhibit coexisting colossal stress and texture depth gradients. Their quantitative determination is possible by X-ray diffraction experiments. Whereas a uniform texture by itself is known to generally cause curvature in so-called sin{sup 2}ψ plots, it is shown that the combined action of texture and stress gradients provides a separate source of curvature in sin{sup 2}ψ plots (i.e., even in cases where a uniform texture does not induce such curvature). On this basis, the texture and stress depth profiles of a nanocrystalline, ultra-thin (50 nm) tungsten film could be determined.

  12. Carrier dynamics and gain spectra at room-temperature in epitaxial ZNO thin films

    DEFF Research Database (Denmark)

    Yu, Ping; Hvam, Jørn Märcher; Wong, K. S.

    1999-01-01

    Carrier dynamics of epitaxial ZnO thin film was investigated using a frequency up-conversion tehcnique. At lower carrier densities, the decay time of free exciton recombination was measured to be 24 ps. Rapid decay times of a few picoseconds were observed at higher carrier densities, which show a...

  13. Ion-Irradiation-Induced Ferromagnetism in Undoped ZnO Thin Films

    Science.gov (United States)

    2013-01-01

    suggestions for reducing this burden, to Washington Headquarters Services , Directorate for Information Operations and Reports, 1215 Jefferson Davis...ments extensively on doped and undoped ZnO thin films using both (i) a vibrating sample magnetometer ( VSM ) in conjunction with a physical property

  14. Development of novel control system to grow ZnO thin films by reactive evaporation

    Directory of Open Access Journals (Sweden)

    Gerardo Gordillo

    2016-07-01

    Full Text Available This work describes a novel system implemented to grow ZnO thin films by plasma assisted reactive evaporation with adequate properties to be used in the fabrication of photovoltaic devices with different architectures. The innovative aspect includes both an improved design of the reactor used to activate the chemical reaction that leads to the formation of the ZnO compound as an electronic system developed using the virtual instrumentation concept. ZnO thin films with excellent opto-electrical properties were prepared in a reproducible way, controlling the deposition system through a virtual instrument (VI with facilities to control the amount of evaporated zinc involved in the process that gives rise to the formation of ZnO, by means of the incorporation of PID (proportional integral differential and PWM (pulse width modulation control algorithms. The effectiveness and reliability of the developed system was verified by obtaining with good reproducibility thin films of n+-ZnO and i-ZnO grown sequentially in situ with thicknesses and resistivities suitable for use as window layers in chalcopyrite based thin film solar cells.

  15. Oxidation of ZnO thin films during pulsed laser deposition process

    Indian Academy of Sciences (India)

    1CICATA-Instituto Politécnico Nacional, Altamira 89600, México. 2INESC Porto, Rua do Campo Alegre, 687, 4169-007 Porto, Portugal. 3School of Physics, Trinity College, Dublin 2, Ireland. MS received 1 March 2012. Abstract. Pulsed laser deposition of ZnO thin films, using KrF laser, is analysed. The films were deposited ...

  16. Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

    Energy Technology Data Exchange (ETDEWEB)

    Debbichi, M., E-mail: mourad_fsm@yahoo.fr [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Souissi, M. [College of Arts and Science Nayriya, Dammam University, 31441 Dammam (Saudi Arabia); Fouzri, A. [Laboratoire Physico-Chimie des Matériaux, Unité de Service Commun de Recherche ‘‘High Resolution X-ray Diffractometer’’, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Schmerber, G. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France); Said, M. [Laboratoire de la matière condensée et nanosciences, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir (Tunisia); Alouani, M. [Institut de Physique et Chimie des Matériaux de Strasbourg (IPCMS) UMR 7504 CNRS-Université de Strasbourg, 23 rue du Loess, BP 43, 67034 Strasbourg Cedex 2 (France)

    2014-06-15

    Highlights: • ZnO:Cd thin film grown on c-sapphire substrate by MOCVD method. • RTFM in ZnO:Cd thin film is detected by SQUID magnetometer measurement. • DFT theory is conducted to elucidate the mechanism of RTFM in Cd-doped ZnO. - Abstract: Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal–organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate.

  17. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Reliable and repeated switching of the resistance of ZnO thin films was obtained between two well defined states of high and low resistance with a narrow dispersion and small switching voltages. Resistance ratios of the high resistance state to low resistance state were found to be in the range of 2–5 orders of magnitude ...

  18. Preparation and characterization of nanostructured ZnO thin films for ...

    Indian Academy of Sciences (India)

    Nanostructured zinc oxide thin films (ZnO) were prepared on conducting glass support (SnO2: F overlayer) via sol–gel starting from colloidal solution of zinc ... Dayalbagh Educational Institute, Dayalbagh, Agra 282 005, India; Department of Physics and Computer Science, Dayalbagh Educational Institute, Dayalbagh, Agra ...

  19. Polycrystalline Silicon Thin-Film Solar Cells on AIT-Textured Glass Superstrates

    Directory of Open Access Journals (Sweden)

    Per I. Widenborg

    2007-01-01

    Full Text Available A new glass texturing method (AIT—aluminium-induced texturisation has recently been developed by our group. In the present work, the potential of this method is explored by fabricating PLASMA poly-Si thin-film solar cells on glass superstrates that were textured with the AIT method. Using an interdigitated metallisation scheme with a full-area Al rear contact, PLASMA cells with an efficiency of up to 7% are realised. This promising result shows that the AIT glass texturing method is fully compatible with the fabrication of poly-Si thin-film solar cells on glass using solid phase crystallisation (SPC of PECVD-deposited amorphous silicon precursor diodes. As such, there are now two distinctly different glass texturing methods—the AIT method and CSG Solar's glass bead method—that are known to be capable of producing efficient SPC poly-Si thin-film solar cells on glass.

  20. Inverted polymer solar cells based on thin ZnO films grown by Mist chemical vapor deposition system

    Science.gov (United States)

    Biswas, Chandan; Ma, Zhu; Zhu, Xiaodan; Kawaharamura, Toshiyuki; Wang, Kang L.

    2014-10-01

    Extensive investigations have been conducted in order to synthesize high quality Zinc oxide (ZnO) thin films for numerous applications. These methods are either expensive to make or result polycrystalline thin films with low optoelectronic properties. Here we demonstrated a simple and inexpensive method to grow high quality ZnO thin films by a mist chemical vapor assisted depositing (Mist-CVD) system for inverted polymer solar cell (IPSC) application. The IPSC performance fabricated by Mist-CVD grown ZnO thin films were compared with two different Zn precursors (Zinc acetylacetonate hydrate and Zinc acetate dehydrate). Variations in IPSC performance on the growth temperature and growth time of the ZnO thin films were prominently demonstrated. The surface morphology of the ZnO films was investigated using scanning electron microscopy, atomic force microscopy and correlated with IPSC performance. The IPSC performance using two different precursors has been compared thoroughly. A 24% increase in solar cell efficiency (contributed from 21% increase in fill factor and 151% increase in shunt resistance) was achieved using Zinc acetate dehydrate compare to Zinc acetylacetonate hydrate precursor. The transmittance of ZnO thin films was evaluated by transmission spectroscopy. High performance IPSC can be fabricated using this simple and inexpensive method by synthesizing high quality thin ZnO films.

  1. Sensitivity Enhancement of ZnO Nanorod Gas Sensors with Surface Modification by an InSb Thin Film

    Science.gov (United States)

    Kakati, Nitul; Jee, Seung Hyun; Kim, Soo Ho; Lee, Hyun-Kwuon; Yoon, Young Soo

    2009-10-01

    Zinc oxide (ZnO) nanorods were prepared on sol-gel ZnO seed-coated alumina substrates by a hydrothermal method. A very thin layer of indium antimonite (InSb) was deposited on the ZnO nanorods by a thermal evaporation technique. X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) were applied to analyze the quality of the ZnO nanorods. XRD results showed that the as-synthesized ZnO nanorods were well crystallized in hexagonal wurzite ZnO. An X-ray photoelectron spectroscopy (XPS) study confirmed the deposition of InSb on the ZnO nanorods. The activation energies of sensors fabricated from ZnO nanorods and InSb-deposited ZnO nanorods were calculated. It was found that the activation energy of the InSb-deposited ZnO nanorods was very small. The sensitivity of the sensors towards acetone gas was measured at concentrations of 500-5,000 ppm and at operating temperatures ranging from 200 to 350 °C. The sensitivity of the InSb-deposited ZnO nanorod sensor was much higher than that of the ZnO nanorod sensor. The optimum temperature of the sensors was found to be 300 °C.

  2. Photoelectrocatalytic degradation of phthalic acid using spray deposited stratified WO3/ZnO thin films under sunlight illumination

    Science.gov (United States)

    Hunge, Y. M.; Mahadik, M. A.; Moholkar, A. V.; Bhosale, C. H.

    2017-10-01

    In the present work, stratified WO3/ZnO thin films have been prepared by simple chemical spray pyrolysis technique. The structural, morphological, compositional and photoelectrocatalytic properties of the stratified WO3/ZnO thin films are studied. The photoelectrochemical (PEC) study shows that, both short circuit current (Isc) and open circuit voltage (Voc) are (Isc = 1.023 mA and Voc = 0.980 V) relatively high at 40 ml spraying quantity of ZnO solution on pre-deposited WO3 thin films. XRD analysis reveals that stratified WO3/ZnO thin films are polycrystalline with monoclinic and hexagonal crystal structures for WO3 and ZnO respectively. The specific surface area of the stratified WO3/ZnO thin film is found to be 48.12 m2 g-1. The enhanced photoelectrocatalytic activity of stratified WO3/ZnO is mainly due to the suppressing the recombination of photo generated electron-hole pairs. The end result shows that the degradation percentage of phthalic acid (PA) using stratified WO3/ZnO photo electrode has reached 63.63% after 320 min. under sunlight illumination. The amount of mineralization of phthalic acid is studied with the help of chemical oxygen demand (COD) measurement.

  3. Luminescence and structural properties of ZnO thin films annealing in air

    Energy Technology Data Exchange (ETDEWEB)

    Baca, R; Martinez, J [Centro de Investigacion de Dispositivos Semiconductores, BUAP, Puebla, Pue. C.P. 72570 (Mexico); Esparza, A [Centro de Ciencias Aplicadas y Desarrollo de TecnologIa - UNAM. C.P. 04510, Mexico D.F (Mexico); Kryshtab, T [Departamento de Ciencias de Materiales, ESFM - IPN, Mexico D.F (Mexico); Juarez, G; Solache, H; Andraca, J; Pena, R, E-mail: rbaca02006@yahoo.com.mx

    2010-02-15

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800deg. C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  4. Luminescence and structural properties of ZnO thin films annealing in air

    Science.gov (United States)

    Baca, R.; Juárez, G.; Solache, H.; Andraca, J.; Martinez, J.; Esparza, A.; Kryshtab, T.; Peña, R.

    2010-02-01

    All ZnO thin films deposited on (001) silicon substrates by DC reactive magnetron sputtering were annealed in air atmosphere with different times at 800°C. The samples were studied by X-ray diffraction technique (XRD), atomic force microscopy (AFM) and photoluminescence (PL) measurements. XRD investigation showed that ZnO phase was hexagonal wurtzite structure growing along the (002) direction. The as grown ZnO films presented macrostrain and microstrain caused a shift of the line diffraction (002) and a broadening respectively. However after 1 hour annealing these strains disappear. The grain size of ZnO films increased with an increase of annealing time. The as-deposited reactive sputtering ZnO films resulted semi-insulating with poor PL response. After high temperature annealing in air, the crystallinity and the PL response considerably improved, but their semi-insulating property also increased. The PL spectra of the annealed samples showed well defined transitions close to the near-band-edge and a wide visible deep-level band emission (430-640 nm). The main interest of this work was to enhance the PL response and to identify the origin of deep-level luminescence bands. The AFM, PL and XRD results indicated that the ZnO films annealing have potential applications in optoelectronic devices.

  5. Experimental and ab initio investigations on textured Li–Mn–O spinel thin film cathodes

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, J., E-mail: Julian.Fischer@kit.edu [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Music, D. [RWTH Aachen University, Materials Chemistry, Kopernikusstrasse 10, 52074 Aachen (Germany); Bergfeldt, T.; Ziebert, C.; Ulrich, S.; Seifert, H.J. [Karlsruhe Institute of Technology (KIT), Institute for Applied Materials (IAM), Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany)

    2014-12-01

    This paper describes the tailored preparation of nearly identical lithium–manganese–oxide thin film cathodes with different global grain orientations. The thin films were synthesized by rf magnetron sputtering from a LiMn{sub 2}O{sub 4}-target in a pure argon plasma. Under appropriate processing conditions, thin films with a cubic spinel structure and a nearly similar density and surface topography but different grain orientation, i.e. (111)- and (440)-textured films, were achieved. The chemical composition was determined by inductively coupled plasma optical emission spectroscopy and carrier gas hot extraction. The constitution- and microstructure were evaluated by X-ray diffraction and Raman spectroscopy. The surface morphology and roughness were investigated by scanning electron and atomic force microscopy. The differently textured films represent an ideal model system for studying potential effects of grain orientation on the lithium ion diffusion and electrochemical behavior in LiMn{sub 2}O{sub 4}-based thin films. They are nearly identical in their chemical composition, atomic bonding behavior, surface-roughness, morphology and thickness. Our initial ab initio molecular dynamics data indicate that Li ion transport is faster in (111)-textured structure than in (440)-textured one. - Highlights: • Thin film model system of differently textured cubic Li–Mn–O spinels. • Investigation of the Li–Mn–O thin film mass density by X-ray reflectivity. • Ab initio molecular dynamics simulation on Li ion diffusion in LiMn{sub 2}O{sub 4}.

  6. Formation of p-type ZnO thin film through co-implantation.

    Science.gov (United States)

    Chuang, Yao-Teng; Liou, Jhe-Wei; Woon, Wei-Yen

    2017-01-20

    We present a study on the formation of p-type ZnO thin film through ion implantation. Group V dopants (N, P) with different ionic radii are implanted into chemical vapor deposition grown ZnO thin film on GaN/sapphire substrates prior to thermal activation. It is found that mono-doped ZnO by N+ implantation results in n-type conductivity under thermal activation. Dual-doped ZnO film with a N:P ion implantation dose ratio of 4:1 is found to be p-type under certain thermal activation conditions. Higher p-type activation levels (1019 cm-3) under a wider thermal activation range are found for the N/P dual-doped ZnO film co-implanted by additional oxygen ions. From high resolution x-ray diffraction and x-ray photoelectron spectroscopy it is concluded that the observed p-type conductivities are a result of the promoted formation of PZn-4NO complex defects via the concurrent substitution of nitrogen at oxygen sites and phosphorus at zinc sites. The enhanced solubility and stability of acceptor defects in oxygen co-implanted dual-doped ZnO film are related to the reduction of oxygen vacancy defects at the surface. Our study demonstrates the prospect of the formation of stable p-type ZnO film through co-implantation.

  7. Preparation of Aligned ZnO Nanorod Arrays on Sn-Doped ZnO Thin Films by Sonicated Sol-Gel Immersion Fabricated for Dye-Sensitized Solar Cell

    OpenAIRE

    Saurdi, I.; M. H. Mamat; M. F. Malek; Rusop, M.

    2014-01-01

    Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity 7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtai...

  8. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  9. Microstructure of ZnO Thin Films Deposited by High Power Impulse Magnetron Sputtering (Postprint)

    Science.gov (United States)

    2015-03-01

    crystallinity needed for the charge transport proper- ties. To extend ZnO applications to flexible polymer substrates, a reduc- tion of the growth temperature is...cathodic vacuum arc, Thin Solid Films 398–399 (2001) 244. [11] C.F. Yu, C.W. Sung, S.H. Chen, S.J. Sun, Relationship between the photoluminescence ... Photoluminescence and heteroepitaxy of ZnO on sapphire substrate (0001) grown by rf magnetron sputtering, J. Vac. Sci. Technol. A 18 (2000) 2864. r

  10. ZrO{sub 2}-ZnO composite thin films for humidity sensing

    Energy Technology Data Exchange (ETDEWEB)

    Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C. [MEMS and Sensor Division, School of Electronics Engineering, VIT University, Vellore, 632014 (India); Meher, S. R.; Balakrishnan, L. [Materials Physics Division, School of Advanced Science, VIT University, Vellore, 632014 (India)

    2016-05-23

    ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

  11. Growth and optical characteristics of high-quality ZnO thin films on graphene layers

    Directory of Open Access Journals (Sweden)

    Suk In Park

    2015-01-01

    Full Text Available We report the growth of high-quality, smooth, and flat ZnO thin films on graphene layers and their photoluminescence (PL characteristics. For the growth of high-quality ZnO thin films on graphene layers, ZnO nanowalls were grown using metal-organic vapor-phase epitaxy on oxygen-plasma treated graphene layers as an intermediate layer. PL measurements were conducted at low temperatures to examine strong near-band-edge emission peaks. The full-width-at-half-maximum value of the dominant PL emission peak was as narrow as 4 meV at T = 11 K, comparable to that of the best-quality films reported previously. Furthermore, the stimulated emission of ZnO thin films on the graphene layers was observed at the low excitation energy of 180 kW/cm2 at room temperature. Their structural and optical characteristics were investigated using X-ray diffraction, transmission electron microscopy, and PL spectroscopy.

  12. Nanostructured hybrid ZnO thin films for energy conversion

    Directory of Open Access Journals (Sweden)

    Samantilleke Anura

    2011-01-01

    Full Text Available Abstract We report on hybrid films based on ZnO/organic dye prepared by electrodeposition using tetrasulfonated copper phthalocyanines (TS-CuPc and Eosin-Y (EoY. Both the morphology and porosity of hybrid ZnO films are highly dependent on the type of dyes used in the synthesis. High photosensitivity was observed for ZnO/EoY films, while a very weak photoresponse was obtained for ZnO/TS-CuPc films. Despite a higher absorption coefficient of TS-CuPc than EoY, in ZnO/EoY hybrid films, the excited photoelectrons between the EoY levels can be extracted through ZnO, and the porosity of ZnO/EoY can also be controlled.

  13. Effect of Al doping on performance of ZnO thin film transistors

    Science.gov (United States)

    Dong, Junchen; Han, Dedong; Li, Huijin; Yu, Wen; Zhang, Shendong; Zhang, Xing; Wang, Yi

    2018-03-01

    In this work, we investigate the Aluminum-doped Zinc Oxide (AZO) thin films and their feasibility as the active layer for thin film transistors (TFTs). A comparison on performance is made between the AZO TFTs and ZnO TFTs. The electrical properties such as saturation mobility, subthreshold swing, and on-to-off current ratio are improved when AZO is utilized as the active layer. Oxygen component of the thin film materials indicates that Al is the suppressor for oxygen defect in active layer, which improves the subthreshold swing. Moreover, based on band structure analyzation, we observe that the carrier concentration of AZO is higher than ZnO, leading to the enhancement of saturation mobility. The microstructure of the thin films convey that the AZO films exhibit much smaller grain boundaries than ZnO films, which results in the lower off-state current and higher on-to-off current ratio of AZO TFTs. The AZO thin films show huge potential to be the active layer of TFTs.

  14. Enhanced optical band-gap of ZnO thin films by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghu, P., E-mail: dpr3270@gmail.com; Naveen, C. S.; Shailaja, J.; Mahesh, H. M., E-mail: hm-mahesh@rediffmail.com [Thin Film and Solar Cell Laboratory, Department of Electronic Science, Bangalore University, Jnanabharathi, Bangalore -560056 (India)

    2016-05-06

    Transparent ZnO thin films were prepared using different molar concentration (0.1 M, 0.2 M & 0.8 M) of zinc acetate on soda lime glass substrates by the sol-gel spin coating technique. The optical properties revealed that the transmittance found to decrease with increase in molar concentration. Absorption edge showed that the higher concentration film has increasingly red shifted. An increased band gap energy of the thin films was found to be direct allowed transition of ∼3.9 eV exhibiting their relevance for photovoltaic applications. The extinction coefficient analysis revealed maximum transmittance with negligible absorption coefficient in the respective wavelengths. The results of ZnO thin film prepared by sol-gel technique reveal its suitability for optoelectronics and as a window layer in solar cell applications.

  15. Growth of (100)-highly textured BaBiO{sub 3} thin films on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Ferreyra, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); Departamento de Física, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 1, Ciudad Universitaria, Buenos Aires (Argentina); Marchini, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Departamento de Química Inorgánica, Analítica y Química-Física, INQUIMAE-CONICET, Facultad Ciencias Exactas y Naturales, Universidad de Buenos Aires, Pabellón 2, Ciudad Universitaria, Buenos Aires (Argentina); Granell, P. [INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Golmar, F. [Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); INTI, CMNB, Av. Gral Paz 5445, B1650KNA San Martín, Buenos Aires (Argentina); Escuela de Ciencia y Tecnología, UNSAM, Campus Miguelete, 1650 San Martín, Buenos Aires (Argentina); Albornoz, C. [GIyA and INN, CNEA, Av. Gral Paz 1499, 1650 San Martín, Buenos Aires (Argentina); and others

    2016-08-01

    We report on the growth and characterization of non-epitaxial but (100)-highly textured BaBiO{sub 3} thin films on silicon substrates. We have found the deposition conditions that optimize the texture, and show that the textured growth is favoured by the formation of a BaO layer at the first growth stages. X-ray diffraction Φ-scans, together with the observation that the same textured growth is found on films grown on Pt and SiO{sub 2} buffered Si, demonstrate the absence of epitaxy. Finally, we have shown that our (100)-oriented BaBiO{sub 3} films can be used as suitable buffers for the growth of textured heterostructures on silicon, which could facilitate the integration of potential devices with standard electronics. - Highlights: • BaBiO{sub 3} thin films were grown on Si substrates and characterized. • Films prepared using optimized conditions are highly textured in the (100) direction. • The absence of in-plane texture was demonstrated by X-ray diffraction. • Our films are suitable buffers for the growth of (100)-textured oxide heterostructures.

  16. Control of crystallographic texture and surface morphology of Pt/Tio2 templates for enhanced PZT thin film texture.

    Science.gov (United States)

    Fox, Austin J; Drawl, Bill; Fox, Glen R; Gibbons, Brady J; Trolier-McKinstry, Susan

    2015-01-01

    Optimized processing conditions for Pt/TiO2/SiO2/Si templating electrodes were investigated. These electrodes are used to obtain [111] textured thin film lead zirconate titanate (Pb[ZrxTi1-x ]O3 0 ≤ x ≤ 1) (PZT). Titanium deposited by dc magnetron sputtering yields [0001] texture on a thermally oxidized Si wafer. It was found that by optimizing deposition time, pressure, power, and the chamber pre-conditioning, the Ti texture could be maximized while maintaining low surface roughness. When oxidized, titanium yields [100]-oriented rutile. This seed layer has as low as a 4.6% lattice mismatch with [111] Pt; thus, it is possible to achieve strongly oriented [111] Pt. The quality of the orientation and surface roughness of the TiO2 and the Ti directly affect the achievable Pt texture and surface morphology. A transition between optimal crystallographic texture and the smoothest templating surface occurs at approximately 30 nm of original Ti thickness (45 nm TiO2). This corresponds to 0.5 nm (2 nm for TiO2) rms roughness as determined by atomic force microscopy and a full-width at half-maximum (FWHM) of the rocking curve 0002 (200) peak of 5.5/spl degrees/ (3.1/spl degrees/ for TiO2). A Pb[Zr0.52Ti 0.48]O3 layer was deposited and shown to template from the textured Pt electrode, with a maximum [111] Lotgering factor of 87% and a minimum 111 FWHM of 2.4/spl degrees/ at approximately 30 nm of original Ti.

  17. Electrical characteristics of ZnO nanorods reinforced polymer nanocomposite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bhattacharjee, Snigdha; Roy, Asim, E-mail: 28.asim@gmail.com [Department of Physics National Institute Technology Silchar Silchar-788010, Assam (India)

    2015-05-15

    ZnO nanorods have been prepared by simple chemical method, which is used to fabricate organic bistable devices (OBDs). OBDs are fabricated by incorporating different weight percent (wt %) of chemically synthesized Zinc Oxide (ZnO) nanorods into polymethylmethacrylate (PMMA). Current-voltage (I-V) measurements of the spin coated ZnO+PMMA nanocomopsite thin film on indium tin oxide (ITO) coated glass substrate showed current hysteresis behaviour, which is an indication of memory effect. The samples exhibit two distinct resistance states, ON and OFF states, characterised by relatively low and high resistance of the OBDs, respectively. It is also observed that with change in ZnO dopant concentration the value of ON/OFF current changes. Higher ON/OFF current ratio is desired for practical applications. Current conduction mechanism of the devices has been explained invoking various existing models, and it has been found that the trapped-charge-limited conduction mechanism was dominant in our samples.

  18. Electrospray Deposition of ZnO Thin Films and Its Application to Gas Sensors

    Directory of Open Access Journals (Sweden)

    Wenwang Li

    2018-02-01

    Full Text Available Electrospray is a simple and cost-effective method to fabricate micro-structured thin films. This work investigates the electrospray process of ZnO patterns. The effects of experimental parameters on jet characteristics and electrosprayed patterns are studied. The length of stable jets increases with increasing applied voltage and flow rate, and decreases with increasing nozzle-to-substrate distance, while electrospray angles exhibit an opposite trend with respect to the stable jet lengths. The diameter of electrosprayed particles decreases with increasing applied voltage, and increases with flow rate. Furthermore, an alcohol gas sensor is presented. The ZnAc is calcined into ZnO, which reveals good repeatability and stability of response in target gas. The sensing response, defined as the resistance ratio of R0/Rg, where R0 and Rg are resistance of ZnO in air and alcohol gas, increases with the concentration of alcohol vapors and electrospray deposition time.

  19. Effect of Sm doping on the physical properties of ZnO thin films deposited by spray pyrolysis technique

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Aparna, K. T.

    2017-05-01

    Undoped and Sm doped ZnO thin films have been prepared by chemical spray pyrolysis method on a glass substrate at 430°C. The physical properties of undoped and Sm doped ZnO thin films are characterized by XRD, FE-SEM, UV-VIS spectroscopy, Hall measurement and PL analysis. XRD pattern reveals that all the films are polycrystalline nature. The FE-SEM study of CdO shows the smooth and uniform surface with the spherical shaped particle. The electrical study reveals the n-type semiconductor and the optical study shows that Sm doped ZnO thin films about 92% transparency and optical band gap vary between 3.266-3.276 eV. Sm doped ZnO thin films have strong green emission behavior.

  20. (0 0 2-oriented growth and morphologies of ZnO thin films prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    Guo Dongyun

    2016-09-01

    Full Text Available Zinc acetate was used as a starting material to prepare Zn-solutions from solvents and ligands with different boiling temperature. The ZnO thin films were prepared on Si(1 0 0 substrates by spin-coating method. The effect of baking temperature and boiling temperature of the solvents and ligands on their morphologies and orientation was investigated. The solvents and ligands with high boiling temperature were favorable for relaxation of mechanical stress to form the smooth ZnO thin films. As the solvents and ligands with low boiling temperature were used to prepare Zn-solutions, the prepared ZnO thin films showed (0 0 2 preferred orientation. As n-propanol, 2-methoxyethanol, 2-(methylaminoethanol and monoethanolamine were used to prepare Zn-solutions, highly (0 0 2-oriented ZnO thin films were formed by adjusting the baking temperature.

  1. Characterization of Flexible CIGS Thin Film Solar Cells or Stainless Steel with Intrinsic ZnO Diffusion Barriers.

    Science.gov (United States)

    Kim, Chae-Woong; Kim, Hye Jin; Kim, Jin Hyeok; Jeong, Chaehwan

    2016-05-01

    ZnO diffusion barrier layer was deposited by RF magnetron sputtering by using the same method as intrinsic ZnO layer. The CIGS solar cells were fabricated on stainless steel substrate. The 50-200 nm thin ZnO diffusion barriers effectively reduced the diffusion of Fe and Cr, from stainless steel substrates into the CIGS absorbers. The CIGS solar cells with ZnO diffusion barriers increased the J(sc) and FF, which resulted in an increase of cell efficiency from 5.9% up to 9.06%.

  2. Vapor Phase Growth of ZnO Single Crystals/Thin Films and Attempts for p-type Doping

    OpenAIRE

    Zhang, Xi

    2014-01-01

    The growth of ZnO single crystals and ZnO thin films on Si substrates by an open-system vapor phase method was studied in this thesis. The as-grown ZnO single crystals were investigated by means of photoluminescence (PL). Two unique emissions were observed in virgin and hydrogenated crystals. The up-to-now attempts for the p-type doping of ZnO were summarized and our doping studies were performed using nitrogen and antimony. The seed-free and open-system vapor phase method is a simple and...

  3. Low-Temperature Pulsed-PECVD ZnO Thin-Film Transistors

    Science.gov (United States)

    Zhao, Dalong; Mourey, Devin A.; Jackson, Thomas N.

    2010-05-01

    We report high-quality ZnO thin films deposited at low temperature (200°C) by pulsed plasma-enhanced chemical vapor deposition (pulsed PECVD). Process byproducts are purged by weak oxidants N2O or CO2 to minimize parasitic CVD deposition, resulting in high-refractive-index thin films. Pulsed-PECVD-deposited ZnO thin-film transistors were fabricated on plasma-enhanced atomic layer deposition (PEALD) Al2O3 dielectric and have a field-effect mobility of 15 cm2/V s, subthreshold slope of 370 mV/dec, threshold voltage of 6.6 V, and current on/off ratio of 108. Thin-film transistors (TFTs) on thermal SiO2 dielectric have a field-effect mobility of 7.5 cm2/V s and threshold voltage of 14 V. For these devices, performance may be limited by the interface between the ZnO and the dielectric.

  4. Effect of annealing temperature on the characteristics of ZnO thin films

    Science.gov (United States)

    Chen, Yi; Jyoti, Nayak; Hyun-U, Ko; Kim, Jaehwan

    2012-11-01

    Effect of annealing temperature on characteristics of sol-gel driven ZnO thin film spin-coated on Si substrate was studied. The UV-visible transmittance of the sol decreased with the increase of the aging time and drastically reduced after 20 days aging time. Granular shape of ZnO crystallites was observed on the surface of the films annealed at 550, 650, and 750 °C, and the crystallite size increased with the increase of the annealing temperature. Consequently nodular shape of crystallites was formed upon increasing the annealing temperature to 850 °C and above. The current-voltage characteristics of the Schottky diodes fabricated with ZnO thin films with various annealing temperatures were measured and analyzed. It is found that, ZnO films showed the Schottky characteristics up to 750 °C annealing temperature. The Schottky diode characteristics were diminished upon increasing the annealing temperature above 850 °C. XPS analysis suggested that the absence of oxygen atoms in its oxidized state in stoichiometric surrounding, might be responsible for the diminished forward current of the Schottky diode when annealed above 850 °C.

  5. Realization of p -ZnO thin films by GaP codoping

    Science.gov (United States)

    Gowrishankar, S.; Balakrishnan, L.; Elanchezhiyan, J.; Balasubramanian, T.; Gopalakrishnan, N.

    2011-11-01

    An attempt has been made to realize p-ZnO by directly doping (codoping) GaP into ZnO thin films. GaP codoped ZnO thin films of different concentrations (1, 2 and 4 mol%) have been grown by RF magnetron sputtering. The grown films on sapphire substrate have been characterized by X-ray diffraction (XRD), Hall measurement, Photoluminescence (PL) and Energy dispersive spectroscopy (EDS) to validate the p-type conduction. XRD result shows that all the films have been preferentially oriented along (0 0 2) orientation. The decrease of full-width at half maximum (FWHM) with increase in GaP doping depicts the decrease in native donor defects. Hall measurement shows that among the three films, 2 and 4 mol% GaP doped ZnO shows p-conductivity due to the sufficient amount of phosphorous incorporation. It has been found that low resistivity (2.17 Ωcm) and high hole concentration (1.8×10 18 cm -3) for 2% GaP codoped ZnO films due to best codoping. The red shift in near-band-edge (NBE) emission and donar-acceptor-pair (DAP) and neutral acceptor bound recombination (A°X) observed by room temperature and low temperature (10 K) PL, respectively, well acknowledged the formation of p-ZnO. The incorporated phosphorous in the film has been also confirmed by EDS analysis.

  6. Recent advances in ZnO nanostructures and thin films for biosensor applications: review.

    Science.gov (United States)

    Arya, Sunil K; Saha, Shibu; Ramirez-Vick, Jaime E; Gupta, Vinay; Bhansali, Shekhar; Singh, Surinder P

    2012-08-06

    Biosensors have shown great potential for health care and environmental monitoring. The performance of biosensors depends on their components, among which the matrix material, i.e., the layer between the recognition layer of biomolecule and transducer, plays a crucial role in defining the stability, sensitivity and shelf-life of a biosensor. Recently, zinc oxide (ZnO) nanostructures and thin films have attracted much interest as materials for biosensors due to their biocompatibility, chemical stability, high isoelectric point, electrochemical activity, high electron mobility, ease of synthesis by diverse methods and high surface-to-volume ratio. ZnO nanostructures have shown the binding of biomolecules in desired orientations with improved conformation and high biological activity, resulting in enhanced sensing characteristics. Furthermore, compatibility with complementary metal oxide semiconductor technology for constructing integrated circuits makes ZnO nanostructures suitable candidate for future small integrated biosensor devices. This review highlights recent advances in various approaches towards synthesis of ZnO nanostructures and thin films and their applications in biosensor technology. Copyright © 2012 Elsevier B.V. All rights reserved.

  7. Effect of bath temperature on the properties of nanocrystalline ZnO thin films.

    Science.gov (United States)

    Pawar, S M; Gurav, K V; Shin, S W; Choi, D S; Kim, I K; Lokhande, C D; Rhee, J I; Kim, J H

    2010-05-01

    The nanocrystalline zinc oxide (ZnO) thin films have been prepared by chemical bath deposition (CBD) method from aqueous zinc nitrate solution at room temperature (25 degrees C) and at higher temperature (75 degrees C). The changes in structural, morphological and optical properties were studied by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical absorption. The structural studies revealed that the film deposited at room temperature showed mixed phases of ZnO and Zn(OH)2 with wurtzite and orthorhombic crystal structure whereas at higher temperature, the deposited film is ZnO with wurtzite crystal structure. After air annealing at 400 degrees C, all the films converted into pure ZnO with wurtzite crystal structure. The films deposited at room temperature showed fibrous surface morphology with interconnected flakes while films deposited at higher temperature shows well-developed nano-rod morphology. Optical study shows that band gap energy (E(g)) of as-deposited thin films deposited at room temperature and at higher temperature are 3.81 and 3.4 eV, decreases up to 3.20 eV, after annealing treatment.

  8. Properties of ZnO thin films prepared by reactive evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gordillo, G.; Calderon, C. [Departamento de Fisica, Universidad Nacional de Colombia, Bogota (Colombia)

    2001-10-01

    Non-doped ZnO thin films with suitable characteristics to be used as transport contact and as buffer layer in solar cells, were prepared by reactive evaporation. Through a parameter study, it was found that the main deposition parameters affect the optoelectrical properties of the ZnO films, being the oxygen partial pressure the parameter which most affects both, the transmittance and the conductivity. Actually, high-conductive ZnO films with blue transmittances greater than 80% are routinely prepared by using oxygen partial pressures greater than 0.2mbar and evaporation temperatures of Zn about 540C. AFM measurements revealed that the high values of blue transmittance obtained with ZnO film deposited at high O{sub 2} - partial pressure are in part controlled by morphological effects. From Hall coefficient and conductivity measurements it was found that the conductivity is dominated by the resulting carrier concentration which is controlled by oxygen vacancies. The conditions to prepare in situ the double low {rho}-ZnO/high {rho}-ZnO bilayer structure regularly used in the fabrication of CdS-free, thin films solar cells, were also found through this study.

  9. The Annealing Effects of ZnO Thin Films on Characteristic Parameters of Au/ZnO Schottky Contacts on n-Si

    OpenAIRE

    A. Toprak; T. Kilicoglu; Y.S. Ocak; K. Akkilic

    2012-01-01

    200 nm ZnO thin films have been grown on n type Silicon substrates by DC sputtering technique. One of the thin films has been annealed at 300 ºC for 45 minutes. The Au front contacts on ZnO thin films have been formed by evaporation of Au metal by means of shadow mask. It has been seen that the rectification ratio of Au/ZnO device obtained using annealed ZnO thin film is higher than the one obtained using unannealed ZnO thin film. The characteristic parameters of Au/ZnO junctions such as idea...

  10. ZnO thin film piezoelectric MEMS vibration energy harvesters with two piezoelectric elements for higher output performance.

    Science.gov (United States)

    Wang, Peihong; Du, Hejun

    2015-07-01

    Zinc oxide (ZnO) thin film piezoelectric microelectromechanical systems (MEMS) based vibration energy harvesters with two different designs are presented. These harvesters consist of a silicon cantilever, a silicon proof mass, and a ZnO piezoelectric layer. Design I has a large ZnO piezoelectric element and Design II has two smaller and equally sized ZnO piezoelectric elements; however, the total area of ZnO thin film in two designs is equal. The ZnO thin film is deposited by means of radio-frequency magnetron sputtering method and is characterized by means of XRD and SEM techniques. These ZnO energy harvesters are fabricated by using MEMS micromachining. The natural frequencies of the fabricated ZnO energy harvesters are simulated and tested. The test results show that these two energy harvesters with different designs have almost the same natural frequency. Then, the output performance of different ZnO energy harvesters is tested in detail. The effects of series connection and parallel connection of two ZnO elements on the load voltage and power are also analyzed. The experimental results show that the energy harvester with two ZnO piezoelectric elements in parallel connection in Design II has higher load voltage and higher load power than the fabricated energy harvesters with other designs. Its load voltage is 2.06 V under load resistance of 1 MΩ and its maximal load power is 1.25 μW under load resistance of 0.6 MΩ, when it is excited by an external vibration with frequency of 1300.1 Hz and acceleration of 10 m/s(2). By contrast, the load voltage of the energy harvester of Design I is 1.77 V under 1 MΩ resistance and its maximal load power is 0.98 μW under 0.38 MΩ load resistance when it is excited by the same vibration.

  11. Comparative study of ZnO thin films prepared by different sol-gel route

    Directory of Open Access Journals (Sweden)

    F Esmaieli Ghodsi

    2012-03-01

    Full Text Available   Retraction Notice    The paper "Comparative study of ZnO thin films prepared by different sol-gel route" by H. Absalan and F. E. Ghodsi, which appeared in Iranian Journal of Physics Research, Vol. 11, No. 4, 423-428 (in Farsi is translation of the paper "Comparative Study of ZnO Thin Films Prepared by Different Sol-Gel Route" by F. E. Ghodsi and H. Absalan, which appeared in ACTA PHYSICA POLONICA A, Vol 118 (2010 (in English and for this reason is retracted from this journal.The corresponding author  (and also the first author is the only responsible person for this action.   

  12. Effects of nitrogen on the growth and optical properties of ZnO thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Cui, J B; Thomas, M A; Soo, Y C; Kandel, H; Chen, T P [Department of Physics and Astronomy, University of Arkansas at Little Rock, Little Rock, AR 72204 (United States)

    2009-08-07

    ZnO thin films were grown using pulsed laser deposition by ablating a Zn target in various mixtures of O{sub 2} and N{sub 2}. The presence of N{sub 2} during deposition was found to affect the growth of the ZnO thin films and their optical properties. Small N{sub 2} concentrations during growth led to strong acceptor-related photoluminescence (PL), while larger concentrations affected both the intensity and temperature dependence of the emission peaks. In addition, the PL properties of the annealed ZnO thin films are associated with the N{sub 2} concentration during their growth. The possible role of nitrogen in ZnO growth and annealing is discussed.

  13. Comparative Study of Irradiated and Annealed ZnO Thin Films for Room Temperature Ammonia Gas Sensing

    Directory of Open Access Journals (Sweden)

    Abhijeet KSHIRSAGAR

    2008-02-01

    Full Text Available Ceramic based thin film sensors are well known for gas sensing applications. These sensors are operated at elevated temperature for good sensitivity. ZnO thin film sensors operated at high temperature are used in ammonia sensing application. But to the best of author’s knowledge no room temperature ZnO (Zinc Oxide thin film sensors are reported. The deposited ZnO films are found to be highly unstable with respect to resistance of the films at room temperature. To increase the stability two different techniques viz. annealing and irradiation are tried. Comparative study of annealed and irradiated ZnO films for stability in resistance is done. Further the performance of these films as ammonia (NH3 gas sensor at room temperature has been studied. The results obtained are reported in this paper and analyzed.

  14. Strain dependent defect mediated ferromagnetism in Mn-doped and undoped ZnO thin films

    Science.gov (United States)

    Schoofs, Frank; Fix, Thomas; Hakimi, Ali M. H. R.; Dhesi, Sarnjeet S.; van der Laan, Gerrit; Cavill, Stuart A.; Langridge, Sean; MacManus-Driscoll, Judith L.; Blamire, Mark G.

    2010-09-01

    The structural and magnetic properties of pulsed laser deposited zinc oxide thin films have been investigated. Room temperature ferromagnetism is present in undoped as well as Mn-doped films. The saturation magnetization of the thin films reveals a dependence on both the composition and the out of plane lattice parameter. X-ray magnetic circular dichroism down to 2 K reveals a purely paramagnetic contribution from the Mn in Mn:ZnO films. We conclude that the observed ferromagnetism arises entirely from intrinsic defects in the ZnO which can be varied by manipulation of the lattice parameter.

  15. Defect-band mediated ferromagnetism in Gd-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2015-01-07

    Gd-doped ZnO thin films prepared by pulsed laser deposition with Gd concentrations varying from 0.02–0.45 atomic percent (at. %) showed deposition oxygen pressure controlled ferromagnetism. Thin films prepared with Gd dopant levels (

  16. Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures

    Science.gov (United States)

    Tuyaerts, Romain; Poncelet, Olivier; Raskin, Jean-Pierre; Proost, Joris

    2017-10-01

    In this article, we propose ZnO thin films as a suitable material for piezoresistors in transparent and flexible electronics. ZnO thin films have been deposited by DC reactive magnetron sputtering at room temperature at various oxygen partial pressures. All the films have a wurtzite structure with a strong (0002) texture measured by XRD and are almost stoichiometric as measured by inductively coupled plasma optical emission spectroscopy. The effect of oxygen concentration on grain growth has been studied by in-situ multi-beam optical stress sensor, showing internal stress going from 350 MPa to -1.1 GPa. The transition between tensile and compressive stress corresponds to the transition between metallic and oxidized mode of reactive sputtering. This transition also induces a large variation in optical properties—from absorbent to transparent, and in the resistivity—from 4 × 10 - 2 Ω .cm to insulating. Finally, the piezoresistance of the thin film has been studied and showed a gauge factor (ΔR/R)/ɛ comprised between -5.8 and -8.5.

  17. Aqueous chemical growth of free standing vertical ZnO nanoprisms, nanorods and nanodiskettes with improved texture co-efficient and tunable size uniformity

    Energy Technology Data Exchange (ETDEWEB)

    Ram, S.D.G. [Bharath Niketan Engineering College, Department of Physics, Aundipatti (India); Ravi, G.; Mahalingam, T. [Alagappa University, Department of Physics, Karaikudi (India); Athimoolam, A. [Fatima Michael College of Engineering and Technology, Department of Physics, Madurai (India); Kulandainathan, M.A. [Central Electro Chemical Research Institute, Karaikudi (India)

    2011-12-15

    Tuning the morphology, size and aspect ratio of free standing ZnO nanostructured arrays by a simple hydrothermal method is reported. Pre-coated ZnO seed layers of two different thicknesses ({approx}350 nm or 550 nm) were used as substrates to grow ZnO nanostructures for the study. Various parameters such as chemical ambience, pH of the solution, strength of the Zn{sup 2+} atoms and thickness of seed bed are varied to analyze their effects on the resultant ZnO nanostructures. Vertically oriented hexagonal nanorods, multi-angular nanorods, hexagonal diskette and popcorn-like nanostructures are obtained by altering the experimental parameters. All the produced nanostructures were analysed by X-ray powder diffraction analysis and found to be grown in the (002) orientation of wurtzite ZnO. The texture co-efficient of ZnO layer was improved by combining a thick seed layer with higher cationic strength. Surface morphological studies reveal various nanostructures such as nanorods, diskettes and popcorn-like structures based on various preparation conditions. The optical property of the closest packed nanorods array was recorded by UV-VIS spectrometry, and the band gap value simulated from the results reflect the near characteristic band gap of ZnO. The surface roughness profile taken from the Atomic Force Microscopy reveals a roughness of less than 320 nm. (orig.)

  18. Fabrication and Characterization of High-Crystalline Nanoporous ZnO Thin Films by Modified Thermal Evaporation System

    Science.gov (United States)

    Islam, M. S.; Hossain, M. F.; Razzak, S. M. A.; Haque, M. M.; Saha, D. K.

    2016-05-01

    The aim of this work is to fabricate high-crystalline nanoporous zinc oxide (ZnO) thin films by a modified thermal evaporation system. First, zinc thin films have been deposited on bare glass substrate by the modified thermal evaporation system with pressure of 0.05mbar, source-substrate distance of 3cm and source temperature 700∘C. Then, high-crystalline ZnO thin film is obtained by annealing at 500∘C for 2h in atmosphere. The prepared ZnO films are characterized with various deposition times of 10min and 20min. The structural property was investigated by X-ray diffractometer (XRD). The optical bandgap and absorbance/transmittance of these films are examined by ultraviolet/visible spectrophotometer. The surface morphological property has been observed by scanning electron microscope (SEM). ZnO films have showed uniform nanoporous surface with high-crystalline hexagonal wurtzite structure. The ZnO films prepared with 20min has excitation absorption-edge at 369nm, which is blueshifted with respect to the bulk absorption-edge appearing at 380nm. The gap energy of ZnO film is decreased from 3.14eV to 3.09eV with increase of the deposition time, which can enhance the excitation of ZnO films by the near visible light, and is suitable for the application of photocatalyst of waste water cleaning and polluted air purification.

  19. Effect of Li doping on the electric and pyroelectric properties of ZnO thin films

    Science.gov (United States)

    Trinca, L. M.; Galca, A. C.; Boni, A. G.; Botea, M.; Pintilie, L.

    2018-01-01

    Un-doped ZnO (UDZO) and Li-doped ZnO (LZO) polycrystalline thin films were grown on platinized silicon by pulsed laser deposition (PLD). The electrical properties were investigated on as-grown and annealed UDZO and LZO films with capacitor configuration, using top and bottom platinum electrodes. In the case of the as-grown films it was found that the introduction of Li increases the resistivity of ZnO and induces butterfly shape in the C-V characteristic, suggesting ferroelectric-like behavior in LZO films. The properties of LZO samples does not significantly changes after thermal annealing while the properties of UDZO samples show significant changes upon annealing, manifested in a butterfly shape of the C-V characteristic and resistive-like switching. However, the butterfly shape disappears if long delay time is used in the C-V measurement, the characteristic remaining non-linear. Pyroelectric signal could be measured only on annealed films. Comparing the UDZO results with those obtained in the case of Li:ZnO, it was found that the pyroelectric properties are considerably enhanced by Li doping, leading to pyroelectric signal with about one order of magnitude larger at low modulation frequencies than for un-doped samples. Although the results of this study hint towards a ferroelectric-like behavior of Li doped ZnO, the presence of real ferroelectricity in this material remains controversial.

  20. Ultraviolet optical functions of ZnO and Ga2O3 thin films

    Science.gov (United States)

    Fujita, Shizuo

    2008-08-01

    Oxide semiconductors are essentially stable and environmental-friendly materials as well as possessing unique multifunctional properties in conjunction with ultraviolet (UV) to deep UV (DUV) optical functions. Among them ZnO and Ga2O3, having the bandgaps of about 3.3 and 4.9eV, respectively, are the promising candidates for exploring their UV applications. This paper reports recent advances of ZnO and Ga2O3 semiconductors focusing on their UV to DUV optical functions and device applications. Since ZnO has reached to the actual application stage and future development of the growth with chemical vapor deposition (CVD) is now strongly requested for mass production, here we introduce a novel CVD growth technique, that is, ultrasonic spray assisted CVD, allowing safe and low-cost growth of high quality ZnO-based films. Homoepitaxy on ZnO substrates resulted in step-flow growth, which has hardly been achieved by metalorganic CVD. Ga2O3 is expected for its DUV functions being supported by the availability of Ga2O3 bulk substrates. We show the potential applications of Ga2O3 substrates for highly sensitive DUV photodetectors as well as homoepitaxial step-flow growth of Ga2O3 thin films by molecular beam epitaxy.

  1. Properties of ZnO thin films deposited by chemical bath deposition and post annealed

    Science.gov (United States)

    Ouerfelli, J.; Regragui, M.; Morsli, M.; Djeteli, G.; Jondo, K.; Amory, C.; Tchangbedji, G.; Napo, K.; Bernède, J. C.

    2006-05-01

    ZnO thin films deposited by chemical bath deposition (CBD) have been studied using x-ray diffraction, scanning electron microscopy, electron microprobe analysis and electrical measurements. The optimum CBD conditions for achieving structured, but adherent, ZnO films are as follows. Zinc acetate (0.0188 mol l-1) and ethylenediamine (0.03 mol l-1) are mixed. The pH of the bath is raised by addition of a base (0.5 mol l-1, NaOH). The solution is maintained at a temperature between 60 °C and 65 ° C, while the bath is continuously stirred. We proceeded to anneal in room air for 30 min at 300 °C and under vacuum for 2 h at 300 °C. All the films obtained are nearly stoichiometric ZnO films crystallized in the usual hexagonal structure. As expected the films are rough and porous. The main difference between the two ZnO film families is their conductivity. The conductivity of the films annealed under vacuum is five orders of magnitude higher than that of those annealed in room air.

  2. Conductivity of ZnO nanowires, nanoparticles, and thin films using time-resolved terahertz spectroscopy.

    Science.gov (United States)

    Baxter, Jason B; Schmuttenmaer, Charles A

    2006-12-21

    The terahertz absorption coefficient, index of refraction, and conductivity of nanostructured ZnO have been determined using time-resolved terahertz spectroscopy, a noncontact optical probe. ZnO properties were measured directly for thin films and were extracted from measurements of nanowire arrays and mesoporous nanoparticle films by applying Bruggeman effective medium theory to the composite samples. Annealing significantly reduces the intrinsic carrier concentration in the ZnO films and nanowires, which were grown by chemical bath deposition. The complex-valued, frequency-dependent photoconductivities for all morphologies were found to be similar at short pump-probe delay times. Fits using the Drude-Smith model show that films have the highest mobility, followed by nanowires and then nanoparticles, and that annealing the ZnO increases its mobility. Time constants for decay of photoinjected electron density in films are twice as long as those in nanowires and more than 5 times those for nanoparticles due to increased electron interaction with interfaces and grain boundaries in the smaller-grained materials. Implications for electron transport in dye-sensitized solar cells are discussed.

  3. Controlled morphological modifications of ZnO thin films by ion irradiation

    Science.gov (United States)

    Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

    2017-11-01

    Nanocrystalline thin films of zinc oxide (ZnO) of thickness 100 nm are deposited using electron beam (e-beam) evaporation technique. These films are irradiated using 75 MeV Au ion beam at two different fluences namely 1  ×  1011 ions cm‑2 and 5  ×  1011 ions cm‑2. GAXRD and Raman spectroscopic studies indicate stability of nanocrystalline phases of ZnO against irradiation. Surface morphology studies using atomic force microscopy show evolution of nanosized hillocks at the surface of the irradiated films. Nano-hillock formation is also confirmed by a blue shift of the UV–visible absorption edge. The electrical conductivity of the films is found to decreases due to irradiation induced morphological modifications. Ion irradiation technique has been effectively used for controlled modification of nanocrystalline ZnO thin film surface. The preliminary studies carried out clearly indicate that the irradiated films are suitable for various applications.

  4. Characterization Of Microwave Obtained Zno Thin Films By RF Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Roger Ondo-Ndong

    2015-02-01

    Full Text Available Abstract We have grown ZnO thin films on glass and Si 001 substrates by r.f magnetron sputtering using metallic zinc target. The crystalline property of the films were observed to vary with the structural properties used. X-ray diffraction XRD measurement showed that the substrate temperature ZnO films exhibited preferred c-axis oriented 002. A study has been made of the influence parameters prepared on the film refractive index. They exhibited the refractive index of 1.97 a c-axis orientation of below 0.32 FWHM of X-ray rocking curves and an energy gap of 3.3 eV at room temperature. It was found that a RF power of 50 W target to substrate distance 70 mm very low gas pressures of 3.35x10-3 Torr in argon and oxygen mixed gas atmosphere giving to ZnO thin films a good homogeneity and a high crystallinity. The network analyzer shows losses are -5dB at a k33 0.26 experimental.

  5. ALD grown nanostructured ZnO thin films: Effect of substrate temperature on thickness and energy band gap

    Directory of Open Access Journals (Sweden)

    Javed Iqbal

    2016-10-01

    Full Text Available Nanostructured ZnO thin films with high transparency have been grown on glass substrate by atomic layer deposition at various temperatures ranging from 100 °C to 300 °C. Efforts have been made to observe the effect of substrate temperature on the thickness of the deposited thin films and its consequences on the energy band gap. A remarkably high growth rate of 0.56 nm per cycle at a substrate temperature of 200 °C for ZnO thin films have been achieved. This is the maximum growth rate for ALD deposited ZnO thin films ever reported so far to the best of our knowledge. The studies of field emission scanning electron microscopy and X-ray diffractometry patterns confirm the deposition of uniform and high quality nanosturtured ZnO thin films which have a polycrystalline nature with preferential orientation along (100 plane. The thickness of the films deposited at different substrate temperatures was measured by ellipsometry and surface profiling system while the UV–visible and photoluminescence spectroscopy studies have been used to evaluate the optical properties of the respective thin films. It has been observed that the thickness of the thin film depends on the substrate temperatures which ultimately affect the optical and structural parameters of the thin films.

  6. Bipolar charge storage characteristics in copper and cobalt co-doped zinc oxide (ZnO) thin film.

    Science.gov (United States)

    Kumar, Amit; Herng, Tun Seng; Zeng, Kaiyang; Ding, Jun

    2012-10-24

    The bipolar charge phenomenon in Cu and Co co-doped zinc oxide (ZnO) film samples has been studied using scanning probe microscopy (SPM) techniques. Those ZnO samples are made using a pulsed laser deposition (PLD) technique. It is found that the addition of Cu and Co dopants suppresses the electron density in ZnO and causes a significant change in the work function (Fermi level) value of the ZnO film; this results in the ohmic nature of the contact between the electrode (probe tip) and codoped sample, whereas this contact exhibits a Schottky nature in the undoped and single-element-doped samples. These results are verified by Kelvin probe force microscopy (KPFM) and ultraviolet photoelectron spectroscopy (UPS) measurements. It is also found that the co-doping (Cu and Co) can stabilize the bipolar charge, whereas Cu doping only stabilizes the positive charge in ZnO thin films.

  7. Simple technique for texture function analysis in granular thin film media

    Energy Technology Data Exchange (ETDEWEB)

    El-Hilo, M., E-mail: mhilo@rocketmail.co [Physics Department, University of Bahrain, P.O. 32038, Sakhir (Bahrain); Al Saie, J. [Physics Department, University of Bahrain, P.O. 32038, Sakhir (Bahrain); Morales, M.P. [Instituto de Ciencia de Materiales de Madrid, CSIC. Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain); Pita, M. [Chemistry and Biomolecular Sciences Department, Clarkson University, 8 Clarkson Avenue, Box 5810, Potsdam, NY 13699 (United States)

    2009-11-15

    In this work a simple technique to extract the texture function in granular thin film media is implemented. The technique is based on previous work in which the distribution function of particles easy axes f(alpha) is calculated from the measured parallel remanence curve (M{sub rp}(beta)). In this simple technique we consider that the measured M{sub rp}(beta) curve can be fitted to a series of cos(2beta), i.e. M{sub rp}(beta)=B{sub 0}+B{sub 2} cos(2beta)+B{sub 4} cos(4beta) where the angle beta is the angle by which the film is rotated. This approximation is found to be valid when the texture function has a standard deviation >20 deg. On this basis, the constants B{sub 0}, B{sub 2} and B{sub 4} can be determined by using only three data points for the parallel remanence, M{sub rp}(0), M{sub rp}(45 deg.) and M{sub rp}(90 deg.). The new technique is applied to a textured thin film consisting of cobalt ferrite particles 17 nm in diameter and to a commercial Sony video tape. Using this simple technique, the obtained texture functions are found to be similar to those obtained from the full M{sub rp}(beta) curves. This new technique will furnish a simple method with which the texture function in 2D systems can be obtained.

  8. High quality ZnO layers with adjustable refractive indices for integrated optics applications

    NARCIS (Netherlands)

    Heideman, Rene; Lambeck, Paul; Gardeniers, Johannes G.E.

    1995-01-01

    Thin (approx. 1 μm) crystalline ZnO films with a good optical quality and a good (0002) texture are grown under two considerably different process parameter sets using a r.f. planar magnetron sputtering unit. The optical parameters of the two corresponding ZnO layers are distinctly different: high

  9. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    KAUST Repository

    Venkatesh, S.

    2016-03-24

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  10. Thermal activation of nitrogen acceptors in ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Dangbegnon, J.K.; Talla, K.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth (South Africa)

    2010-06-15

    Nitrogen doping in ZnO is inhibited by spontaneous formation of compensating defects. Perfect control of the nitrogen doping concentration is required, since a high concentration of nitrogen could induce the formation of donor defects involving nitrogen. In this work, the effect of post-growth annealing in oxygen ambient on ZnO thin films grown by Metalorganic Chemical Vapor Deposition, using NO as both oxidant and nitrogen dopant, is studied. After annealing at 700 C and above, low-temperature photoluminescence shows the appearance of a transition at {proportional_to}3.23 eV which is interpreted as pair emission involving a nitrogen acceptor. A second transition at {proportional_to}3.15 eV is also discussed. This work suggests annealing as a potential means for p-type doping using nitrogen (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Effect of polyvinyl alcohol on electrochemically deposited ZnO thin films for DSSC applications

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.

    2017-05-01

    Nanostructures of zinc oxide (ZnO) thin film are electrochemically deposited in the absence and presence of polyvinyl alcohol (PVA) on fluorine doped tin oxide (FTO) substrate. X-ray diffraction (XRD) patterns and Raman spectroscopy confirmed the formation of hexagonal structure of ZnO. The film prepared in the presence of PVA showed a better crystallinity and its crystalline growth along the (002) plane orientation. Field emission scanning electron microscope (FE-SEM) images display nanowire arrays (NWAs) and sponge like morphology for films prepared in the absence and presence of PVA, respectively. Photoluminescence (PL) spectra depict the film prepared in the presence PVA having less atomic defects with good crystal quality compared with other film. Dye sensitized solar cell (DSSC) is constructed using low cost eosin yellow dye and current-voltage (J-V) curve is recorded for optimized sponge like morphology based solar cell.

  12. Thin Solid Films Topical Special Issue on ZnO related transparent conductive oxides

    Energy Technology Data Exchange (ETDEWEB)

    Chu, Jinn P.; Endo, Tamio; Ellmer, Klaus; Gessert, Tim; Ginley, David

    2016-04-01

    World-wide research activities on ZnO and related transparent conductive oxides (TCO) in thin film, nanostructured, and multilayered forms are driven by the vast potential of these materials for optoelectronic, microelectronic, and photovoltaic applications. Renewed interest in ZnO applications is partly stimulated by cost reduction in material processing and device development. One of the most important issues is doping and alloying with Al, Ga, In, Sn, etc. in order to tune properties. When highly doped, these materials are used as transparent-conducting contacts on solar cells, as well as in catalytic, spintronic, and surface acoustic wave devices. Film growth conditions, including substrate type and orientation, growth temperature, deposition rate, and ambient atmosphere, all play important roles in determining structural, electrical, magnetic, and optical properties.

  13. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    S. Venkatesh

    2016-03-01

    Full Text Available We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %. Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  14. The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Venkatesh, S.; Baras, A.; Roqan, I. S., E-mail: Iman.roqan@kaust.edu.sa [Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900 (Saudi Arabia); Lee, J.-S. [Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States)

    2016-03-15

    We studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaron percolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (∼40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetism in doped/un-doped ZnO.

  15. A model bismuth oxide intergranular thin film in a ZnO twist grain boundary.

    Science.gov (United States)

    Domingos, H S

    2010-04-14

    The electronic properties of a model bismuth oxide intergranular film in ZnO were investigated using density functional plane wave calculations. It was found that oxygen excess plays a fundamental role in the appearance of electrical activity. The introduction by oxygen interstitials or zinc vacancies results in depletion of the charge in deep gap states introduced by the bismuth impurities. This makes the boundary less metallic and promotes the formation of acceptor states localized to the boundary core, resulting in Schottky barrier enhancement. The results indicate that the origin of electrical activity in thin intergranular bismuth oxide films is probably not distinct from that in decorated ZnO boundaries. © 2010 IOP Publishing Ltd

  16. Formation of ZnO thin films by photocatalytic reaction

    OpenAIRE

    Nishikiori, Hiromasa; Nagaya, Satoshi; Takikawa, Takumi; Kikuchi, Ayaka; Yamakami, Tomohiko; Wagata, Hajime; Teshima, Katsuya; Fujii, Tsuneo

    2014-01-01

    Zinc oxide and layered zinc hydroxides were deposited from an aqueous solution of zinc nitrate at 323–358 K on a substrate plate with a very thin titanium dioxide film by a photocatalytic reaction. The amorphous or low crystalline zinc hydroxide aggregates were deposited at a low temperature. The zinc oxide crystals with about 1–2 μm-sized hexagonal columns and 10 nm-sized spheres were formed at 338–358 K. Nitrate ions in the solution were reduced to nitrite ions, and water was transformed in...

  17. Physical Property Evaluation of ZnO Thin Film Fabricated by Low-Temperature Process for Flexible Transparent TFT.

    Science.gov (United States)

    Khafe, Adie Bin Mohd; Watanabe, Hiraku; Yamauchi, Hiroshi; Kuniyoshi, Shigekazu; Iizuka, Masaaki; Sakai, Masatoshi; Kudo, Kazuhiro

    2016-04-01

    The usual silicon-based display back planes require fairly high process temperature and thus the development of a low temperature process is needed on flexible plastic substrates. A new type of flexible organic light emitting transistor (OLET) had been proposed and investigated in the previous work. By using ultraviolet/ozone (UV/O3) assisted thermal treatments on wet processed zinc oxide field effect transistor (ZnO-FET), through low-process temperature, ZnO-FETs were fabricated which succeeded to achieve target drain current value and mobility. In this study, physical property evaluation of ZnO was conducted in term of their crystallinity, the increase composition of ZnO formed inside the thin film and the decrease of the carbon impurities originated from aqueous solution of the ZnO itself. The X-ray diffraction (XRD) evaluation showed UV/03 assisted thermal treatment has no obvious effect towards crystallinity of ZnO in the range of low process temperature. Moreover, through X-ray photoelectron spectroscopy (XPS) evaluation and Fourier transform infrared (FT-IR) spectroscopy evaluation, more carbon impurities disappeared from the ZnO thin film and the increase of composition amount of ZnO, when the thin film was subjected to UV/O3 assisted thermal treatment. Therefore, UV/O3 assisted thermal treatment contributed in carbon impurities elimination and accelerate ZnO formation in ZnO thin film, which led to the improvement in the electrical property of ZnO-FET in the low-process temperature.

  18. Raman spectroscopy of the interface between a thin nanostructured ZnO film and fullerene C60

    Science.gov (United States)

    Zakhidov, E. A.; Zakhidova, M. A.; Kokhkharov, A. M.; Nematov, Sh. K.; Nusretov, R. A.; Kuvondikov, V. O.; Saparbaev, A. A.

    2017-04-01

    The resonance and nonresonance Raman scattering in the interface between a thin ZnO film with a well-developed nanostructured surface morphology and a layer of fullerene C60 molecules deposited on this film has been investigated. It is shown that the intensity of the interaction between the C60 molecules and ZnO film surface can be estimated based on the spectral scattering characteristics.

  19. Nanocrystalline TiO2/ZnO thin films: fabrication and application to dye-sensitized solar cells.

    Science.gov (United States)

    Mane, Rajaram S; Lee, Won Joo; Pathan, Habib M; Han, Sung-Hwan

    2005-12-29

    Nanocrystalline TiO2 thin films composed of densely packed grains were deposited onto indium-doped tin oxide (ITO)-coated glass substrates at room temperature using a chemical bath deposition technique. A layer-by-layer (LbL) process was utilized to obtain a 1.418-microm-thick TiO2/ZnO structure. The TiO2 surface was super-hydrophilic, but its hydrophilicity decreased considerably after ZnO deposition. Other TiO2/ZnO films were studied to assess their suitability as photoelectrodes in dye-sensitized solar cells (DSSCs).

  20. Characterization of nanostructured ZnO thin films deposited through vacuum evaporation

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2015-04-01

    Full Text Available This work presents a novel technique to deposit ZnO thin films through a metal vacuum evaporation technique using colloidal nanoparticles (average size of 30 nm, which were synthesized by our research group, as source. These thin films had a thickness between 45 and 123 nm as measured by profilometry. XRD patterns of the deposited thin films were obtained. According to the HRSEM micrographs worm-shaped nanostructures are observed in samples annealed at 600 °C and this characteristic disappears as the annealing temperature increases. The films obtained were annealed from 25 to 1000 °C, showing a gradual increase in transmittance spectra up to 85%. The optical band gaps obtained for these films are about 3.22 eV. The PL measurement shows an emission in the red and in the violet region and there is a correlation with the annealing process.

  1. Effect of angle of deposition on the Fractal properties of ZnO thin film surface

    Science.gov (United States)

    Yadav, R. P.; Agarwal, D. C.; Kumar, Manvendra; Rajput, Parasmani; Tomar, D. S.; Pandey, S. N.; Priya, P. K.; Mittal, A. K.

    2017-09-01

    Zinc oxide (ZnO) thin films were prepared by atom beam sputtering at various deposition angles in the range of 20-75°. The deposited thin films were examined by glancing angle X-ray diffraction and atomic force microscopy (AFM). Scaling law analysis was performed on AFM images to show that the thin film surfaces are self-affine. Fractal dimension of each of the 256 vertical sections along the fast scan direction of a discretized surface, obtained from the AFM height data, was estimated using the Higuchi's algorithm. Hurst exponent was computed from the fractal dimension. The grain sizes, as determined by applying self-correlation function on AFM micrographs, varied with the deposition angle in the same manner as the Hurst exponent.

  2. Dependence of the textural properties and surface species of ZnO ...

    Indian Academy of Sciences (India)

    The zinc hydroxycarbonate intermediate phase is missing in the case of NaOH as precipitating agent; therefore, it manifests poorer textural characteristics. The morphology of P123-modified sample is different and consists of needle-shaped particles. The urea-precipitated samples display superior performance inthe ...

  3. Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique

    Science.gov (United States)

    Jiménez-González, A. E.; Soto Urueta, Jose A.; Suárez-Parra, R.

    1998-09-01

    Pure and aluminum-doped ZnO thin films of high quality were prepared by the solgel deposition method. ZnO thin films are formed by a three-step decomposition of the chemical complex (Zn(CH 3COO) 2·2H 2O) to ZnO. The aluminum doping was achieved by the addition of AlCl 3·2H 2O and Al(NO 3) 3·9H 2O in the methanol solution of the chemical complex at an atomic ratio of Al/Zn=10 -3-10 -2. The films are transparent (90% optical transmittance) in the near UV, VIS and near IR ranges. X-ray diffraction analysis indicates that the crystallites of both ZnO and ZnO : Al thin films are preferentially oriented along the c-axis, [0 0 2] direction of the hexagonal crystal structure. The electrical conductivity of ZnO thin films increases with film thickness, under selected heat treatments and with aluminum doping. The dark conductivity and photoconductivity values of the films are in the range 10-100 [Ω cm] -1, which are considered adequate for certain solar cell and electrochromic applications. Measurements of the activation energy show that pure and aluminum doped ZnO thin films have generally one donor level around 50 meV and another at 120 meV below the conduction band. These results are used to explain the high electrical conductivity of the films.

  4. Optical and electrical characteristics of aluminum-doped ZnO thin films prepared by solgel technique

    Energy Technology Data Exchange (ETDEWEB)

    Jimenez-Gonzalez, A.E.; Soto Urueta, Jose A.; Suarez-Parra, R. [Centro de Investigacion en Energia, UNAM, Apartado postal 34, 62580 Temixco, Morelos (Mexico)

    1998-09-01

    Pure and aluminum-doped ZnO thin films of high quality were prepared by the solgel deposition method. ZnO thin films are formed by a three-step decomposition of the chemical complex (Zn(CH{sub 3}COO){sub 2}{center_dot}2H{sub 2}O) to ZnO. The aluminum doping was achieved by the addition of AlCl{sub 3}{center_dot}2H{sub 2}O and Al(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O in the methanol solution of the chemical complex at an atomic ratio of Al/Zn=10{sup -3}-10{sup -2}. The films are transparent (90% optical transmittance) in the near UV, VIS and near IR ranges. X-ray diffraction analysis indicates that the crystallites of both ZnO and ZnO : Al thin films are preferentially oriented along the c-axis, [0 0 2] direction of the hexagonal crystal structure. The electrical conductivity of ZnO thin films increases with film thickness, under selected heat treatments and with aluminum doping. The dark conductivity and photoconductivity values of the films are in the range 10-100 [{Omega} cm]{sup -1}, which are considered adequate for certain solar cell and electrochromic applications. Measurements of the activation energy show that pure and aluminum doped ZnO thin films have generally one donor level around 50 meV and another at 120 meV below the conduction band. These results are used to explain the high electrical conductivity of the films

  5. Evolution of the properties of ZnO thin films subjected to heating treatments

    Energy Technology Data Exchange (ETDEWEB)

    Prepelita, Petronela; Stefan, N.; Luculescu, C.; Garoi, F., E-mail: florin.garoi@gmail.com; Birjega, R.

    2012-05-01

    Structural and optical properties of ZnO thin films (200 nm thickness) deposited using magnetron sputtering technique are influenced by structural defects. Therefore, we applied various heating treatments in order to control and improve the crystallinity of the samples. These treatments were realized in air at temperatures of 350 Degree-Sign C, 550 Degree-Sign C and 700 Degree-Sign C respectively, each for a duration of 1 h. The properties of the samples were investigated both before and after the heating treatment. Modern methods like X-ray Diffraction, Atomic Force Microscopy and Scanning Electron Microscopy were used to analyze the structure and morphology of the heated ZnO thin films. These heating treatments may be held responsible for rearrangements in the morphology of the thin films. Thus, it was observed that an increase of porosity and agglomeration of the crystallites is followed by an increase in the size of the crystallites. Inter-crystalline borders will migrate determining a coalescence of several crystallites during the heating process, as well. As a consequence, an increase of the band gap width from 3.26 eV to 3.30 eV (at 350 Degree-Sign C) and 3.32 eV (at 550 Degree-Sign C) respectively, occurred.

  6. Ga-doped ZnO thin film surface characterization by wavelet and fractal analysis

    Energy Technology Data Exchange (ETDEWEB)

    Jing, Chenlei; Tang, Wu, E-mail: tang@uestc.edu.cn

    2016-02-28

    Graphical abstract: - Highlights: • Multi-resolution signal decomposition of wavelet transform is applied to Ga-doped ZnO thin films with various thicknesses. • Fractal properties of GZO thin films are investigated by box counting method. • Fractal dimension is not in conformity with original RMS roughness. • Fractal dimension mainly depends on the underside diameter (grain size) and distance between adjacent grains. - Abstract: The change in roughness of various thicknesses Ga-doped ZnO (GZO) thin films deposited by magnetron reactive sputtering on glass substrates at room temperature was measured by atomic force microscopy (AFM). Multi-resolution signal decomposition based on wavelet transform and fractal geometry was applied to process surface profiles, to evaluate the roughness trend of relevant frequency resolution. The results give a six-level decomposition and the results change with deposited time and surface morphology. Also, it is found that fractal dimension is closely connected to the underside diameter (grain size) and the distance between adjacent grains that affect the change rate of surface and the increase of the defects such as abrupt changes lead to a larger value of fractal dimension.

  7. Room temperature pulsed laser deposited ZnO thin films as photoluminiscence gas sensors

    Energy Technology Data Exchange (ETDEWEB)

    Padilla-Rueda, D.; Vadillo, J.M. [Department of Analytical Chemistry, Faculty of Science, University of Malaga, UMA Campus Teatinos, s/n, 29071 Malaga (Spain); Laserna, J.J., E-mail: laserna@uma.es [Department of Analytical Chemistry, Faculty of Science, University of Malaga, UMA Campus Teatinos, s/n, 29071 Malaga (Spain)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer Elaboration of functional ZnO thin films by PLD at room temperature is possible. Black-Right-Pointing-Pointer Fluorescence quenching of ZnO thin films may be used for NO{sub 2} sensors. Black-Right-Pointing-Pointer Addition of oxygen during deposition is required to get films of better quality. Black-Right-Pointing-Pointer Films exhibited linear behaviour in the range between 26 and 100 ppm. - Abstract: Zinc oxide thin films with optical sensing capabilities for NO{sub 2} have been elaborated by pulsed laser deposition (PLD) onto glass substrates at room temperature with Nd:YAG laser (1064 nm). Morphology, chemical composition and optical characteristics of the films were evaluated as a function of laser fluence, gas pressure and target-to-substrate distance. Films exhibit excellent morphological and optical (transmittance and photoluminescence) properties. The films have been evaluated as fluorescence sensors for NO{sub 2} in the concentration range between 26 and 200 ppm.

  8. Fabrication and characterization of pristine and annealed Ga doped ZnO thin films using sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Abhisek, E-mail: abhisekmishra153@gmail.com; Gouda, Himanshu Sekhar, E-mail: himanshugouda@yahoo.in [School of Applied Sciences, KIIT University, Campus-3, Patia, Bhubaneswar, Odisha-751024 (India); Mohapatra, Saswat, E-mail: saswat44@gmail.com [Department of Applied Physics, Indian School of Mines, Dhanbad, Jharkhand-826004 (India); Singh, Udai P. [School of Electronics Engineering, KIIT University, Campus-3, Patia, Bhubaneswar, Odisha-751024 (India)

    2016-05-06

    ZnO is a wide-band gap, transparent, polar semiconductor with unparalleled optoelectronic, piezoelectric, thermal and transport properties, which make it the material of choice for a wide range of applications such as blue/UV optoelectronics, energy conversion, transparent electronics, spintronic, plasmonic and sensor devices. We report, three sets of Ga doped Zinc Oxide (GZO) were fabricated in different sputtering power (100 watt, 200 watt and 300 watt). Thereafter films were annealed in nitrogen ambient for 30 minutes at 400° C. From the optical absorption spectroscopy it was found that pristine films are showing a 75% transmittance in the visible region of light and it increases after the annealing. However, for 300 W grown sample opposite trend has been achieved for the post annealed sample. X-ray diffraction pattern of all the pristine and annealed films showed a preferable growth orientation at (002) phase. Some other weak peaks were also appeared in different angle which indicates that films are polycrystalline in nature. XRD data also reveals that crystallite size increases with sputtering power up to 200 W and thereafter it decreases with the deposition power. It also noted that the crystallite size of the annealed film increases with compare to the non annealed films. At room temperature an enhancement in electrical properties of Ga doped ZnO thin films was noted for the annealed ZnO films except for the film deposited at 300 watt. More significantly, it was found that annealed thin films showed the resistivity in the range of 10{sup −3} ∼ 10{sup −4} ohm-cm. Such a high optical transmittance and conducting zinc-oxide thin film can be used as a window layer in solar cell.

  9. Thickness dependent magnetic transitions in pristine MgO and ZnO sputtered thin films

    Directory of Open Access Journals (Sweden)

    Mukes Kapilashrami

    2010-09-01

    Full Text Available We report a systematic study of the thickness dependency of room temperature ferromagnetism in pristine MgO (~100–500 nm and ZnO (~100–1000 nm thin films deposited by reactive magnetron sputtering technique under the respective identical controlled optimum oxygen ambience. As far as we know this is the first such report on ferromagnetic pure MgO thin films, a result which should be of significance in understanding the functional aspects of magnetic tunnelling characteristics in devices using MgO dielectrics. From the magnetic characterization we observe a distinct variation in the saturation magnetization (MS with increasing film thickness. In the case of MgO thin films MS values vary in the range 0.04–1.58 emu/g (i.e. 0.0012–0.046 μB/unit cell with increasing film thickness showing the highest MS value for the 170 nm thick film. Above this thickness MS is found to decrease and eventually above 420 nm the films show a paramagnetic behaviour followed by the well known diamagnetic property for the bulk (>500 nm. It is obvious that since initially the MS values increase with thickness, there has to be a maximum before the films become diamagnetic at some finite thickness. We also note that the MS values observed for MgO are the highest (more than twice the value observed for ZnO to be reported for such a defect induced ferromagnetism in a pristine oxide. The origin of ferromagnetic order in both the oxides appears to arise from the respective cat-ion vacancies. The discovery of film thickness dependent ferromagnetic order should be very useful in developing multifunctional devices based on the technologically important materials MgO and ZnO.

  10. Comparison of Light Trapping in Silicon Nanowire and Surface Textured Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Rion Parsons

    2017-04-01

    Full Text Available The optics of axial silicon nanowire solar cells is investigated and compared to silicon thin-film solar cells with textured contact layers. The quantum efficiency and short circuit current density are calculated taking a device geometry into account, which can be fabricated by using standard semiconductor processing. The solar cells with textured absorber and textured contact layers provide a gain of short circuit current density of 4.4 mA/cm2 and 6.1 mA/cm2 compared to a solar cell on a flat substrate, respectively. The influence of the device dimensions on the quantum efficiency and short circuit current density will be discussed.

  11. Investigation on the physical properties of C-doped ZnO thin films deposited by the thermionic vacuum arc

    Science.gov (United States)

    Mohammadigharehbagh, Reza; Özen, Soner; Hakan Yudar, H.; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

    2017-01-01

    The aim of this study is to determine some physical properties of C-doped ZnO coated on a glass substrate by using the thermionic vacuum arc method. The produced C-doped ZnO thin film is characterized by using several analysis techniques. The produced thin film has a cubic crystal structure, high transmittance in the visible region, symmetrical surface distribution, and optical band gap energy of 3.34 eV. According to the XRD analysis of the produced thin film, it is a fullerene (C60)-doped polycrystalline ZnO. Hardness value and Young's modulus value were determined as 8 GPa and 140 GPa, respectively. These physical properties are adequate for future transparent electrode applications.

  12. Optimization of optical and electrical characteristics of solution processed Ga doped ZnO thin film nano structures

    Science.gov (United States)

    Mistry, Bhaumik V.; Joshi, U. S.

    2017-05-01

    In this study Ga doped ZnO (GZO) transparent conducting thin films were grown on glass substrate using sol gel spin coating method. The Ga content in GZO was varied by calculated amount of Ga doping source added in solvent. The structural, optoelectronic and electrical properties of GZO thin films were investigated in detail. The GZO Thin films have hexagonal wurtzite structure. The particle size of the GZO films were increase as doping content increases from 2% to 5%. The 2% Ga doped ZnO film has electrical resistivity is 0.11 Ω cm. From the transmittance spectra, it was found that GZO films possessed high transparency above 70% with the wavelength range from 400 to 800 nm. We find 2% as optimum doping concentration for Ga doped ZnO for obtaining highest conducting and transparent layers.

  13. Ellipsometry characterization of polycrystalline ZnO layers with the modeling of carrier concentration gradient: Effects of grain boundary, humidity, and surface texture

    Energy Technology Data Exchange (ETDEWEB)

    Sago, Keisuke; Fujiwara, Hiroyuki, E-mail: fujiwara@gifu-u.ac.jp [Center of Innovative Photovoltaic Systems (CIPS), Gifu University, 1-1 Yanagido, Gifu 501-1193 (Japan); Kuramochi, Hideto; Iigusa, Hitoshi; Utsumi, Kentaro [Tokyo Research Laboratory, TOSOH Co., Ltd., 2743-1 Hayakawa, Ayase-shi, Kanagawa 252-1123 (Japan)

    2014-04-07

    Spectroscopic ellipsometry (SE) has been applied to study the effects of grain boundary, humidity, and surface texture on the carrier transport properties of Al-doped ZnO layers fabricated by dc and rf magnetron sputtering. In the SE analysis, the variation in the free carrier absorption toward the growth direction, induced by the ZnO grain growth on foreign substrates, has been modeled explicitly by adopting a multilayer model in which the optical carrier concentration (N{sub opt}) varies continuously with a constant optical mobility (μ{sub opt}). The effect of the grain boundary has been studied by comparing μ{sub opt} with Hall mobility (μ{sub Hall}). The change in μ{sub Hall}/μ{sub opt} indicates a sharp structural transition of the ZnO polycrystalline layer at a thickness of d ∼ 500 nm, which correlates very well with the structure confirmed by transmission electron microscopy. In particular, below the transition thickness, the formation of the high density grain boundary leads to the reduction in the μ{sub Hall}/μ{sub opt} ratio as well as N{sub opt}. As a result, we find that the thickness dependence of the carrier transport properties is almost completely governed by the grain boundary formation. On the other hand, when the ZnO layer is exposed to wet air at 85 °C, μ{sub Hall} reduces drastically with a minor variation of μ{sub opt} due to the enhanced grain boundary scattering. We have also characterized textured ZnO:Al layers prepared by HCl wet etching by SE. The analysis revealed that the near-surface carrier concentration increases slightly after the etching. We demonstrate that the SE technique can be applied to distinguish various rough textured structures (size ∼ 1 μm) of the ZnO layers prepared by the HCl etching.

  14. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  15. Local study of the magnetism of Co-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Moreno, M S [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Centro Atomico Bariloche and Instituto Balseiro, 8400 San Carlos de Bariloche (Argentina); Kasama, T [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Frontier Research System, Institute of Physical and Chemical Research, Hatoyama, Saitama 350-0395 (Japan); Dunin-Borkowski, R E [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Frontier Research System, Institute of Physical and Chemical Research, Hatoyama, Saitama 350-0395 (Japan); Cooper, D [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Midgley, P A [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ (United Kingdom); Steren, L B [Centro Atomico Bariloche and Instituto Balseiro, 8400 San Carlos de Bariloche (Argentina); Duhalde, S [Laboratorio de Ablacion Laser, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina); Vignolo, M F [Laboratorio de Ablacion Laser, Facultad de IngenierIa, Universidad de Buenos Aires, Paseo Colon 850, 1063 Buenos Aires (Argentina)

    2006-05-07

    Complementary electron microscopy techniques that provide local information about structural, electronic and magnetic properties have been used to study thin films of Zn{sub 0.85}Co{sub 0.15}O grown on Si{sub 3}N{sub 4} buffered (100) Si substrates at 673 K. No evidence of secondary phases at interfaces was found. For this growth temperature, Co is incorporated into the ZnO lattice by substituting for Zn, and its oxidation state is 2{sup +}. Off-axis electron holography reveals no measurable magnetic signal, either at domains or at interfaces, in agreement with macroscopic measurements that indicate a non-ferromagnetic behaviour.

  16. Role of cobalt in room-temperature ferromagnetic Co-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    C. C. Wang

    2012-03-01

    Full Text Available A series of Co-doped ZnO thin films were prepared under various deposition conditions using the pulsed laser deposition method. X-ray photoelectron spectroscopy (XPS and XPS depth profiling were used to detect the elemental valence states of Zn, Co and O. It was found that the films deposited under low temperature and high oxygen pressure exhibited intrinsic ferromagnetic properties due to oxidation of Co (Co2+ from the material. However, when the films were deposited under high temperature and low oxygen pressure, metallic cobalt (Co0 appeared and the ferromagnetism was greatly enhanced.

  17. P-type ZnO thin films prepared by plasma molecular beam epitaxy using radical NO

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.W.; Lu, Y.M.; Shen, D.Z.; Liu, Y.C.; Yan, J.F.; Li, B.H.; Zhang, Z.Z.; Zhang, J.Y.; Fan, X.W. [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16-Dongnanhu Road, Changchun 130033 (China); Shan, C.X. [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

    2005-05-01

    N-doped p-type ZnO thin films were grown by plasma molecular beam epitaxy (P-MBE) on c-plane sapphire (Al{sub 2}O{sub 3}) using radical NO as oxygen source and nitrogen dopant. The reproducible ZnO thin films have maximum net hole concentration (N{sub A}-N{sub D}) of 1.2 x 10{sup 18} cm{sup -3} and minimum resistivity of 9.36 {omega} cm. The influence of N incorporation on the quality of the ZnO thin films was studied using X-ray diffraction and absorption spectra. The photoluminescence spectra at 77 K of p-type ZnO thin films are dominated by the emission from donor-acceptor pair recombination. The formation mechanism of p-type ZnO is explained by the optical emission spectra of radical N{sub 2} and radical NO. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  18. Texture-Etched SnO2 Glasses Applied to Silicon Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing-Rui Wu

    2014-01-01

    Full Text Available Transparent electrodes of tin dioxide (SnO2 on glasses were further wet-etched in the diluted HCl:Cr solution to obtain larger surface roughness and better light-scattering characteristic for thin-film solar cell applications. The process parameters in terms of HCl/Cr mixture ratio, etching temperature, and etching time have been investigated. After etching process, the surface roughness, transmission haze, and sheet resistance of SnO2 glasses were measured. It was found that the etching rate was increased with the additions in etchant concentration of Cr and etching temperature. The optimum texture-etching parameters were 0.15 wt.% Cr in 49% HCl, temperature of 90°C, and time of 30 sec. Moreover, silicon thin-film solar cells with the p-i-n structure were fabricated on the textured SnO2 glasses using hot-wire chemical vapor deposition. By optimizing the texture-etching process, the cell efficiency was increased from 4.04% to 4.39%, resulting from the increment of short-circuit current density from 14.14 to 15.58 mA/cm2. This improvement in cell performances can be ascribed to the light-scattering effect induced by surface texturization of SnO2.

  19. Organic photovoltaic cells based on ZnO thin film electrodes.

    Science.gov (United States)

    Ghica, C; Ion, L; Epurescu, G; Nistor, L; Antohe, S; Dinescu, M

    2010-02-01

    Due to its wide band-gap (ca. 3.4 eV), ZnO is a possible candidate material to be used as transparent electrode for a new class of photovoltaic (PV) cells. Also, an increased interest for the photovoltaic properties of several organic monomers and polymers (merocyanines, phthalocyanines and porphyrins) was noticed, because of their high optical absorption in the visible region of the spectrum allowing them to be used as potential inexpensive materials for solar cells. Preparation and properties of CuPc (copper phthalocyanine) based photovoltaic cells using ZnO thin films as transparent conductor electrodes are presented in this paper. ZnO layers are grown by pulsed laser deposition, while the organic layers are obtained by thermal evaporation. Structural characterization is performed by electron microscopy. Optical and transport properties of the mutilayered structures are obtained by electrical and spectro-photometric measurements. The influence of the ZnO-polymer interface on the external quantum efficiency (EQE) of the photovoltaic cell is clearly evidenced by our measurements.

  20. Synthesis of ZnO thin films by 40 ps rate at 532 nm laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Ristoscu, C.; Socol, G.; Mihailescu, I.N. [National Institute for Lasers, Plasma and Radiations Physics, Lasers Department, 409 Atomistilor, P.O. Box MG-54, Magurele, Ilfov (Romania); Socol, M. [National Institute for Materials Physics, P.O. Box MG-7, Magurele, Ilfov (Romania); Jafer, R.; Al-Hadeethi, Y.; Batani, D. [Universita degli Studi di Milano-Bicocca, Dipartimento di Fisica ' ' G. Occhialini' ' , Milano (Italy)

    2011-09-15

    The synthesis by pulsed laser deposition of ZnO thin films with a Nd:YAG laser system delivering pulses of 40 ps rate at 532 nm is reported. The laser beam irradiated the target placed inside a vacuum chamber evacuated down to 1.33 x 10{sup -1} Pa. The incident laser fluence was of 28 J/cm{sup 2} in a spot of 0.1 mm{sup 2}. The ablated material was collected onto double face polished (111) Si or quartz wafers placed parallel at a separation distance of 7 mm. The AFM, SEM, UV-Vis, FT-IR and absorption ellipsometry results indicated that we obtained pure ZnO films with a rather uniform surface, having an average roughness of 37 nm. We observed by SEM that particulates are present on ZnO film surface or embedded into bulk. Their density and dimension were intermediary between particulates observed on similar structures deposited with fs or ns laser pulses. We noticed that the density of the particulates is increasing while their average size is decreasing when passing from ns to ps and fs laser pulses. The average transmission in the UV-Vis spectral region was found to be higher than 85%. (orig.)

  1. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  2. Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition

    Science.gov (United States)

    Shukla, R. K.; Srivastava, Anchal; Srivastava, Atul; Dubey, K. C.

    2006-09-01

    Nanocrystalline thin films of Al doped ZnO (Al:0-5 at%) with low electrical resistivity and high optical transparency have been grown by pulsed laser deposition. X-ray diffraction patterns showed the presence of hexagonal wurtzite ZnO phase with strong c-axis orientation in all the cases. The c-axis lattice parameter was found to increase with increase in Al doping. The average grain size in the film decreases from ˜38 to ˜25 nm with increasing Al concentration from 0 to 5 at%. For a critical doping of 2 at%, the resistivity of the AZO film is minimum (6×10 -4 Ω-cm) and the average optical transparency is nearly 85%. The band gap increases with increase in doping which is in accordance to Burstein-Moss shift. A blue shift in the absorption edge of ZnO with increasing Al concentration in the film is noteworthy as it leads to increase in the width of the transmission window.

  3. Morphological, structural and optical properties of ZnO thin films deposited by dip coating method

    Energy Technology Data Exchange (ETDEWEB)

    Marouf, Sara; Beniaiche, Abdelkrim; Guessas, Hocine, E-mail: aziziamor@yahoo.fr [Laboratoire des Systemes Photoniques et Optiques Non Lineaires, Institut d' Optique et Mecanique de Precision, Universite Ferhat Abbas-Setif 1, Setif (Algeria); Azizi, Amor [Laboratoire de Chimie, Ingenierie Moleculaire et Nanostructures, Universite Ferhat Abbas-Setif 1, Setif (Algeria)

    2017-01-15

    Zinc oxide (ZnO) thin films were deposited on glass substrate by dip coating technique. The effects of sol aging time on the deposition of ZnO films was studied by using the field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and optical transmission techniques. The morphology of the films strongly depends on preparation route and deposition technique. It is noteworthy that films deposited from the freshly prepared solution feature indistinct characteristics; had relatively poor crystalline quality and low optical transmittance in the visible region. The increase in sol aging time resulted in a gradual improvement in crystallinity (in terms of peak sharpness and peak intensity) of the hexagonal phase for all diffraction peaks. Effect of sol aging on optical transparency is quite obvious through increased transmission with prolonged sol aging time. Interestingly, 72-168 h sol aging time was found to be optimal to achieve smooth surface morphology, good crystallinity and high optical transmittance which were attributed to an ideal stability of solution. These findings present a better-defined and more versatile procedure for production of clean ZnO sols of readily adjustable nanocrystalline size. (author)

  4. Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films.

    Science.gov (United States)

    Tsay, Chien-Yie; Hsu, Wei-Tse

    2017-12-01

    ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO, AZO, and GZO thin films were compared, and the performance of ZnO-based UV photodetectors under ultraviolet A (UVA) light were measured. Experimental results confirmed the synthesis of single-phase nanocrystalline ZnO-based thin films and the successful substitution of Al and Ga into Zn sites in ZnO crystals. The results also demonstrated that the optical transmittance and electrical properties of ZnO thin films could be improved by Al and Ga doping. UV photodetectors based on ZnO-based thin films, having a metal-semiconductor-metal (MSM) configuration, were fabricated with Al inter-digitated electrodes. All photodetectors showed an ohmic nature between semiconductor and electrode contacts and exhibited a sharp increase in photocurrent under illumination with UVA light. We found that the MSM UV photodetector based on the GZO semiconductor thin film exhibited the best UV response (IUVA/Idark) of 73.3 and the highest photocurrent responsivity of 46.2 A/W under UVA light (power density ~0.825 mW/cm²) at 5 V bias.

  5. Light Trapping for Thin Silicon Solar Cells by Femtosecond Laser Texturing: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Lee, B. G.; Lin, Y. T.; Sher, M. J.; Mazur, E.; Branz, H. M.

    2012-06-01

    Femtosecond laser texturing is used to create nano- to micron-scale surface roughness that strongly enhances light-trapping in thin crystalline silicon solar cells. Light trapping is crucial for thin solar cells where a single light-pass through the absorber is insufficient to capture the weakly absorbed red and near-infrared photons, especially with an indirect-gap semiconductor absorber layer such as crystalline Si which is less than 20 um thick. We achieve enhancement of the optical absorption from light-trapping that approaches the Yablonovitch limit.

  6. Structure and magnetic properties of highly textured nanocrystalline Mn–Zn ferrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, Jaison, E-mail: jaisonjosephp@gmail.com [Department of Physics, Goverment College, Khandola, Goa 403107 India (India); Tangsali, R.B. [Department of Physics, Goa University, Taleigao Plateau, Goa 403206 India (India); Pillai, V.P. Mahadevan [Department of Optoelectronics, University of Kerala,Thiruvananthapuram, Kerala 695581 India (India); Choudhary, R.J.; Phase, D.M.; Ganeshan, V. [UGC-DAE-CSR Indore, Madhya Pradesh 452017 India. (India)

    2015-01-01

    Nanoparticles of Mn{sub 0.2}Zn{sub 0.8}Fe{sub 2}O{sub 4} were chemically synthesized by co-precipitating the metal ions in aqueous solutions in a suitable alkaline medium. The identified XRD peaks confirm single phase spinal formation. The nanoparticle size authentication is carried out from XRD data using Debye Scherrer equation. Thin film fabricated from this nanomaterial by pulse laser deposition technique on quartz substrate was characterized using XRD and Raman spectroscopic techniques. XRD results revealed the formation of high degree of texture in the film. AFM analysis confirms nanogranular morphology and preferred directional growth. A high deposition pressure and the use of a laser plume confined to a small area for transportation of the target species created certain level of porosity in the deposited thin film. Magnetic property measurement of this highly textured nanocrystalline Mn–Zn ferrite thin film revealed enhancement in properties, which are explained on the basis of texture and surface features originated from film growth mechanism.

  7. Synthesis and characterization of porous structured ZnO thin film for dye sensitized solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Marimuthu, T.; Anandhan, N., E-mail: anandhan-kn@rediffmail.com; Mummoorthi, M. [School of Physics, Alagappa University, Karaikudi – 630 003 (India); Dharuman, V. [Department of Bioelectronics and Biosensors, Alagappa University, Karaikudi – 630 003 (India)

    2016-05-23

    Zinc oxide (ZnO) and zinc oxide/eosin yellow (ZnO/EY) thin films were potentiostatically deposited onto fluorine doped tin oxide (FTO) glass substrate. Effect of eosin yellow dye on structural, morphological and optical properties was studied. X-ray diffraction patterns, micro Raman spectra and photoluminescence (PL) spectra reveal hexagonal wurtzite structure with less atomic defects in 101 plane orientation of the ZnO/EY film. Scanning electron microscopy (SEM) images show flower for ZnO and porous like structure for ZnO/EY thin film, respectively. DSSC was constructed and evaluated by measuring the current density verses voltage curve.

  8. Synthesis of ZnO Nanowires and Their Photovoltaic Application: ZnO Nanowires/AgGaSe2 Thin Film Core-Shell Solar Cell

    Directory of Open Access Journals (Sweden)

    Elif Peksu

    2015-01-01

    Full Text Available In this investigation, hydrothermal technique was employed for the synthesis of well-aligned dense arrays of ZnO nanowires (NWs on a wide range of substrates including silicon, soda-lime glass (SLG, indium tin oxide, and polyethylene terephthalate (PET. Results showed that ZnO NWs can be successfully grown on any substrate that can withstand the growth temperature (~90°C and precursor solution chemicals. Results also revealed that there was a strong impact of growth time and ZnO seed layer deposition route on the orientation, density, diameter, and uniformity of the synthesized nanowires. A core-shell n-ZnO NWs/p-AgGaSe2 (AGS thin film solar cell was fabricated as a device application of synthesized ZnO nanowires by decoration of nanowires with ~700 nm thick sputtering deposited AGS thin film layer, which demonstrated an energy conversion efficiency of 1.74% under 100 mW/cm2 of simulated solar illumination.

  9. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells

    Directory of Open Access Journals (Sweden)

    Neda Neykova

    2017-02-01

    Full Text Available Densely packed ZnO nanocolumns (NCs, perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM. The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS. Photothermal deflection spectroscopy (PDS was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

  10. Study of the surface properties of ZnO nanocolumns used for thin-film solar cells.

    Science.gov (United States)

    Neykova, Neda; Stuchlik, Jiri; Hruska, Karel; Poruba, Ales; Remes, Zdenek; Pop-Georgievski, Ognen

    2017-01-01

    Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

  11. Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hye-ji; Lee, Seul-Gi [Division of Materials Science and Engineering, Hanyang University, Seoul 133-719 (Korea, Republic of); Kim, H., E-mail: hkim_2@naver.com [Department of Materials Science and Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Park, Jin-Seong, E-mail: jsparklime@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-719 (Korea, Republic of)

    2014-05-01

    Highlights: • The mist CVD Li-doped ZnO film has changed from hexagonal to tetragonal structure depending on Li amounts. • The mobility of Li-doped ZnO film has improved about 10{sup 2} times higher than that of ZnO film by mist CVD. • The addition of Li into ZnO semiconductors may be the enhanced crystallinity and reduced defect states. - Abstract: Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ∼100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.

  12. Growth of Al doped ZnO thin films by a synchronized two laser system

    Energy Technology Data Exchange (ETDEWEB)

    Gyoergy, E. [Institute of Atomic Physics, P.O. Box MG 36, 77125 Bucharest (Romania) and Consejo Superior de Investigationes Cientificas, Instituto de Ciencia de Materiales, Campus de la UAB, 08193 Bellaterra (Spain)]. E-mail: eniko@ifin.nipne.ro; Santiso, J. [Consejo Superior de Investigationes Cientificas, Instituto de Ciencia de Materiales, Campus de la UAB, 08193 Bellaterra (Spain); Giannoudakos, A. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, Vasileos Konstantinou Ave. 48, 11635 Athens (Greece); Kompitsas, M. [National Hellenic Research Foundation, Theoretical and Physical Chemistry Institute, Vasileos Konstantinou Ave. 48, 11635 Athens (Greece); Mihailescu, I.N. [Institute of Atomic Physics, P.O. Box MG 36, 77125 Bucharest (Romania); Pantelica, D. [National Institute for Physics and Nuclear Engineering, 76900 Bucharest (Romania)

    2005-07-30

    We report the deposition of Al doped ZnO thin films with the aid of a synchronised two laser system. The laser system consists of an ArF* excimer laser ({lambda} = 193 nm, {tau} {approx} 12 ns) and a Nd:YAG laser ({lambda} = 355 nm, {tau} {approx} 10 ns), for the time-matched ablation of the host (Zn) and dopant (Al) targets in oxygen atmosphere. Our approach allows for the independent and accurate setting of the laser fluences of the two lasers, in accordance with the energy requirements of the host and dopant materials. The method proposed by us permits also an in situ change of the doping conditions throughout the thin film growth process. The controlled modification of the dopant profile inside the growing film can be obtained relatively easily by the appropriate variation of the Nd:YAG laser fluence and/or number of pulses applied to the Al dopant target during the deposition process.

  13. Role of indium in highly crystalline ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Anil; Chaudhary, Sujeet; Pandya, Dinesh K. [Thin Film Laboratory, Physics Department, Indian Institute of Technology Delhi, New Delhi 110016 (India)

    2013-02-05

    Zinc oxide and indium doped zinc oxide (ZnO:In) transparent conducting thin films were deposited on glass substrates by pulsed DC magnetron sputtering using separate Zn and In targets. The independent control of the In content in ZnO has helped us to explore the role of indium in influencing the oriented (002) growth, crystallinity, conductivity and mobility of the doped films. The lowest resistivity of ZnO:In thin film is 2.73 Multiplication-Sign 10{sup -3} ohm-cm. At the optimal condition of high (002) orientation, ZnO:In films with electrical resistivity of 7.63 Multiplication-Sign 10{sup -3} ohm.cm and mobility of 126.4 cm{sup 2}/V.s are achieved.

  14. Enhanced stimulated emission in ZnO thin films using microdisk top-down structuring

    Energy Technology Data Exchange (ETDEWEB)

    Nomenyo, K.; Kostcheev, S.; Lérondel, G. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Gadallah, A.-S. [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 rue Marie Curie, CS 42060, 10004 Troyes Cedex (France); Department of Laser Sciences and Interactions, National Institute of Laser Enhanced Sciences, Cairo University, Giza (Egypt); Rogers, D. J. [Nanovation, 8, route de Chevreuse, 78117 Châteaufort (France)

    2014-05-05

    Microdisks were fabricated in zinc oxide (ZnO) thin films using a top-down approach combining electron beam lithography and reactive ion etching. These microdisk structured thin films exhibit a stimulated surface emission between 3 and 7 times higher than that from a reference film depending on the excitation power density. Emission peak narrowing, reduction in lasing threshold and blue-shifting of the emission wavelength were observed along with enhancement in the emitted intensity. Results indicate that this enhancement is due to an increase in the internal quantum efficiency combined with an amplification of the stimulated emission. An analysis in terms of waveguiding is presented in order to explain these effects. These results demonstrate that very significant gains in emission can be obtained through conventional microstructuration without the need for more onerous top-down nanostructuration techniques.

  15. Characterization of piesoelectric ZnO thin films and the fabrication of piezoelectric micro-cantilevers

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, Raegan Lynn [Iowa State Univ., Ames, IA (United States)

    2005-01-01

    In Atomic Force Microscopy (AFM), a microcantilever is raster scanned across the surface of a sample in order to obtain a topographical image of the sample's surface. In a traditional, optical AFM, the sample rests on a bulk piezoelectric tube and a control loop is used to control the tip-sample separation by actuating the piezo-tube. This method has several disadvantages--the most noticeable one being that response time of the piezo-tube is rather long which leads to slow imaging speeds. One possible solution aimed at improving the speed of imaging is to incorporate a thin piezoelectric film on top of the cantilever beam. This design not only improves the speed of imaging because the piezoelectric film replaces the piezo-tube as an actuator, but the film can also act as a sensor. In addition, the piezoelectric film can excite the cantilever beam near its resonance frequency. This project aims to fabricate piezoelectric microcantilevers for use in the AFM. Prior to fabricating the cantilevers and also part of this project, a systematic study was performed to examine the effects of deposition conditions on the quality of piezoelectric ZnO thin films deposited by RF sputtering. These results will be presented. The deposition parameters that produced the highest quality ZnO film were used in the fabrication of the piezoelectric cantilevers. Unfortunately, the fabricated cantilevers warped due to the intrinsic stress of the ZnO film and were therefore not usable in the AFM. The complete fabrication process will be detailed, the results will be discussed and reasons for the warping will be examined.

  16. Probing magnetism and electronic structure of Fe-doped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    El Amiri, A., E-mail: aelamiri@casablanca.ma [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Moubah, R., E-mail: reda.moubah@hotmail.fr [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Lmai, F. [LPTA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Abid, M. [LPFA, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco); Hassanain, N. [Laboratoire de Physique des Matériaux, Faculté des Sciences, BP 1014 Rabat (Morocco); Hlil, E.K. [Institut Néel, CNRS et Université Joseph Fourier, BP 166, 38042 Grenoble (France); Lassri, H. [LPMMAT, Faculté des Sciences Ain Chock, Université Hassan II, BP 5366 Mâarif, Casablanca (Morocco)

    2016-01-15

    Ab-initio calculations using Korringa–Kohn–Rostoker method combined with the coherent potential approximation were performed in order to study the magnetic properties of Fe-doped ZnO thin films with different Fe contents. The extracted parameters are compared with those determined experimentally. Based on total and partial densities of state curves, we demonstrate that there is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions, respectively. The dominant mechanism is found to be antiferromagnetic. However, with increasing Fe content the ferromagnetic contribution increases. In addition, the effect of structural defects on the magnetism of the system is reported. It is shown that both Zn and O vacancies increase ferromagnetism, which is more pronounced in case of Zn. - Highlights: • The KKR–CPA approach was used to study the magnetism of Fe-doped ZnO thin films. • There is a competition between p–d exchange and superexchange mechanisms leading to weak ferromagnetic and antiferromagnetic contributions. • Zn vacancies are more significant than the O ones for obtaining ferromagnetism.

  17. Ultraviolet Stimulated Emission from Sol-Gel Spin Coated ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Ahmed S. Razeen

    2017-01-01

    Full Text Available Low cost ultraviolet stimulated emission has been generated using optical excitation of ZnO thin films deposited by sol-gel spin coating on n+ As-doped 100 Si-substrate. The number of deposited layers and the heat treatment have been investigated to obtain a film that can generate stimulated emission under optical excitation. The optimum condition for preparation of the film has been presented. X-ray diffraction and scanning electron microscope have been used for structural and morphological investigations. Input-output intensity dependence and spectral width, peak emission wavelength, and the quantum efficiency versus the pump intensity have been presented. A quantum efficiency of about 24.2% has been reported, a power exponent higher than 8 has been obtained in input-output intensity dependence, and a threshold of about 23 Mw/cm2 has been evaluated for the samples. The mechanism by which stimulated emission occurs has been discussed. The results show that sol-gel spin coating is a promising method for generating ultraviolet stimulated emission from ZnO thin films.

  18. Al-doped and in-doped ZnO thin films in heterojunctions with silicon

    Energy Technology Data Exchange (ETDEWEB)

    Chabane, L.; Zebbar, N.; Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32-16111, Algiers (Algeria); Aida, M.S. [LCMet Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32-16111 Algiers (Algeria)

    2016-04-30

    The undoped, Al-doped and In-doped ZnO thin films were deposited by ultrasonic spray pyrolysis technique, onto glass and p-Si substrates and the physical properties of the films were investigated. The X-ray diffraction, optical analysis and electrical characterisations, indicate that the films were polycrystalline with hexagonal würtzite type structure and revealed that the aluminium doping deteriorates the crystalline and optical properties and enhances the electrical conductivity whereas indium doping improves all properties. The transport mechanism controlling the conduction through the heterojunctions was studied. For the heterostructures, the temperature dependent current–voltage characteristics showed rectifying behaviour in the dark, but current transport mechanism is not the same for all heterojunctions. Therefore, the presence of the interface states and volume defects are identified as limiting factors for obtaining a high quality heterojunction interface. - Highlights: • Al-doped and In-doped ZnO thin films have been deposited onto Si. • In-doped ZnO/p-Si heterojunction showed poor rectifying behaviour. • Al-doped ZnO/p-Si heterojunction showed a good rectifying at room temperature. • The carriers transport mechanisms was controlled by interfacial and volume defects.

  19. Structural and optical characteristics of spin-coated ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Smirnov, M. [' Al. I. Cuza' University, Physics Department, 11 Carol I Blvd, Iasi 700506 (Romania); Baban, C., E-mail: baban@uaic.ro [' Al. I. Cuza' University, Physics Department, 11 Carol I Blvd, Iasi 700506 (Romania); Rusu, G.I. [' Al. I. Cuza' University, Physics Department, 11 Carol I Blvd, Iasi 700506 (Romania)

    2010-02-01

    Zinc oxide (ZnO) thin films were deposited onto glass substrates by spin-coating method, from a precursor solution containing zinc acetate, ethanol and ammonium hydroxide. After deposition, the films were heated at a temperature of 100 deg. C in order to remove unwanted materials. Finally, the films were annealed at 500 deg. C for complete oxidation. X-ray diffraction showed that ZnO films were polycrystalline and have a hexagonal (wurtzite) structure. The crystallites are preferentially oriented with (0 0 2) planes parallel to the substrate surface. The films have a high transparency (more than 75%) in the spectral range from 450 nm to 1300 nm. The analysis of absorption spectra shows the direct nature of band-to-band transitions. The optical bandgap energy ranges between 3.15 eV and 3.25 eV. Some correlations between the processing parameters (spinning speed, temperature of post deposition heat treatment) and structure and optical characteristics of the respective thin films were established.

  20. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

    2017-07-15

    Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  1. Exploration of Wettability and Optical Aspects of ZnO Nano Thin Films Synthesized by Radio Frequency Magnetron Sputtering

    Directory of Open Access Journals (Sweden)

    Kartik H. Patel

    2016-03-01

    Full Text Available This paper aims to explore structural, optical and wettabil‐ ity aspects of zinc oxide (ZnO nano thin films prepared by radio frequency (RF magnetron sputtering. The deposition time is varied from 10 to 50 minutes and sputtering pressure from 0.5 to 8.0 Pa. The increase of deposition time from 10 to 50 minutes leads to formation of a single (002 peak for ZnO films; (100, (101 and (110 peaks are not observed under these conditions. The intensity for (100, (002, (101 and (110 peaks decreases with a sputtering pressure value of 3.5 Pa and above. The optical transmis‐ sion and band gaps are measured by a UV-Vis-NIR spectrophotometer. The wettability and contact-angle hysteresis (CAH for deposited ZnO nano thin films are investigated for water, ethylene glycol, sunflower oil and formamide using a contact-angle goniometer.

  2. Sol-gel synthesis and characterization of undoped and Al-doped ZnO thin films for memristive application

    Directory of Open Access Journals (Sweden)

    Dawit G. Ayana

    2016-11-01

    Full Text Available The Sol-gel route is a versatile method to fabricate multi-layer, dense and homogeneous ZnO thin films with a controlled thickness and defects for a memristive application. In this work, sol-gel derived multi-layer undoped and Al-doped ZnO thin films were prepared by a spin-coating technique on SiO2/Ti/Pt and silica glass substrates. The effect of both Al doping and curing conditions on the structural and morphological features of ZnO films was investigated by complementary techniques, including electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction analysis. Electrical measurements were performed on SiO2/Ti/Pt/ZnO/Pt(dishes and SiO2/Ti/Pt/ZnO(Al/Pt(dishes fabricated memristive cells and preliminary current-voltage curves were acquired.

  3. Quality improvement of ZnO thin layers overgrown on Si(100 substrates at room temperature by nitridation pretreatment

    Directory of Open Access Journals (Sweden)

    Peng Wang

    2012-06-01

    Full Text Available To improve the quality of ZnO thin film overgrown on Si(100 substrate at RT (room temperature, the Si(100 surface was pretreated with different methods. The influence of interface on the overgrown ZnO layers was investigated by atomic force microscopy, photoluminescence and X-ray diffraction. We found that the nitridation pretreatment could significantly improve the quality of RT ZnO thin film through two-fold effects: one was to buffer the big lattice mismatch and ease the stress resulted from heterojunction growth; the other was to balance the interface charge, block the symmetric inheritance from the cubic Si (100 substrate and thus restrain the formation of zincblende phase.

  4. Biaxial texturing of inorganic photovoltaic thin films using low energy ion beam irradiation during growth

    Energy Technology Data Exchange (ETDEWEB)

    Groves, James R [Los Alamos National Laboratory; De Paula, Raymond F [Los Alamos National Laboratory; Hayes, Garrett H [STANFORD UNIV.; Li, Joel B [STANFORD UNIV.; Hammond, Robert H [STANFORD UNIV.; Salleo, Alberto [STANFORD UNIV.; Clemens, Bruce M [STANFORD UNIV.

    2010-05-07

    We describe our efforts to control the grain boundary alignment in polycrystalline thin films of silicon by using a biaxially textured template layer of CaF{sub 2} for photovoltaic device applications. We have chosen CaF{sub 2} as a candidate material due to its close lattice match with silicon and its suitability as an ion beam assisted deposition (mAD) material. We show that the CaF{sub 2} aligns biaxially at a thickness of {approx}10 nm and, with the addition of an epitaxial CaF{sub 2} layer, has an in-plane texture of {approx}15{sup o}. Deposition of a subsequent layer of Si aligns on the template layer with an in-plane texture of 10.8{sup o}. The additional improvement of in-plane texture is similar to the behavior observed in more fully characterized IBAD materials systems. A germanium buffer layer is used to assist in the epitaxial deposition of Si on CaF{sub 2} template layers and single crystal substrates. These experiments confirm that an mAD template can be used to biaxially orient polycrystalline Si.

  5. Aluminum doped ZnO thin films deposited by direct current sputtering: Structural and optical properties

    Science.gov (United States)

    Barhoumi, A.; Leroy, G.; Duponchel, B.; Gest, J.; Yang, L.; Waldhoff, N.; Guermazi, S.

    2015-06-01

    Direct current sputtering was used to growth Al-doped ZnO (AZO) thin films at various substrate temperatures. Structural and optical properties of AZO thin films were investigated by X-ray diffraction (XRD), energy dispersive X-ray (EDX) and Ultraviolet-Visible-Near IR spectroscopy. According to the XRD patterns, all films showed an hexagonal wurtzite structure with a preferred orientation along c-axis. EDX showed that all films are doped with 1% wt of Al. The transmittance and reflectance changed with the substrate temperature Ts. AZO has a high transmittance which is a crucial parameter for optical materials and applications. Thus, it is important to determine optical constants of the films. In this order, optical parameters such as the optical band gap, absorption coefficient, extinction coefficient, refractive index, dispersion parameter, dielectric constants and optical conductivity were studied in order to investigate the effects of Ts on the optical properties of AZO thin films. The dispersion energy, single-oscillator strength and the long wavelength refractive index of the AZO thin films were found to be affected by substrate temperature Ts.

  6. Study of p-type ZnO and MgZnO Thin Films for Solid State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jianlin [Univ. of California, Riverside, CA (United States)

    2015-07-31

    This project on study of p-type ZnO and MgZnO thin films for solid state lighting was carried out by research group of Prof. Jianlin Liu of UCR during the four-year period between August 2011 and July 2015. Tremendous progress has been made on the proposed research. This final report summarizes the important findings.

  7. Low temperature growth of highly transparent c-axis oriented ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Amirhaghi, S.; Craciun, V.; Craciun, D.; Elders, J.; Boyd, I.W.

    1994-01-01

    The effects of the oxygen partial pressure, substrate temperature and laser wavelength on the structural and optical properties of thin films of ZnO grown on silicon and glass substrates by pulsed laser deposition have been studied. Regardless of thickness, all the grown layers are c-axis oriented

  8. Effects of laser wavelength and fluence on the growth of ZnO thin films by pulsed laser deposition

    NARCIS (Netherlands)

    Craciun, V.; Amirhaghi, S.; Craciun, D.; Elders, J.; Gardeniers, Johannes G.E.; Boyd, Ian W.

    Transparent, electrically conductive and c-axis oriented ZnO thin films have been grown by the pulsed laser deposition (PLD) technique on silicon and Corning glass substrates employing either a KrF excimer laser (λ = 248 nm) or a frequency-doubled Nd:YAG laser (λ = 532 nm). The crystalline

  9. Investigation of ZnO Thin Film Synthesized by Spray Pyrolysis Method as a Toxic Gases Sensor

    Science.gov (United States)

    Khojier, K.

    2017-10-01

    In recent years, environmental pollution, particularly toxic gases and vapors, have greatly increased; hence, their detection has become increasingly important. This paper investigates ZnO thin films fabricated by the spray pyrolysis method to fabricate a toxic gases sensor. A ZnO thin film of 100 nm thickness was deposited on a glass substrate at 100°C. The crystallographic structure was characterized by x-ray diffraction and a field-emission scanning electron microscope was employed to investigate the surface physical morphology and chemical composition. Sensitivity and selectivity of the sample were tested with respect to different toxic gases and vapors including carbon monoxide, ammonia, hydrogen sulfide, chlorine, nitrogen dioxide, benzene, formaldehyde and toluene in the temperature range of 100-300°C. The results showed that the ZnO thin film is more selective to NO2 gas than the other toxic gases and vapors in the studied temperature range. The ZnO thin film-based NO2 gas sensor also showed a good reproducibility, stability, and detection limit of 10 ppm at the operating temperature of 200°C.

  10. ZnO dense nanowire array on a film structure in a single crystal domain texture for optical and photoelectrochemical applications

    Science.gov (United States)

    Zhong, Miao; Sato, Yukio; Kurniawan, Mario; Apostoluk, Aleksandra; Masenelli, Bruno; Maeda, Etsuo; Ikuhara, Yuichi; Delaunay, Jean-Jacques

    2012-12-01

    A single crystal domain texture quality (a unique in-plane and out-of-plane crystalline orientation over a large area) ZnO nanostructure of a dense nanowire array on a thick film has been homogeneously synthesized on a-plane sapphire substrates over large areas through a one-step chemical vapor deposition (CVD) process. The growth mechanism is clarified: a single crystal [0\\bar {2}1] oriented ZnAl2O4 buffer layer was formed at the ZnO film and the a-plane sapphire substrate interface via a diffusion reaction process during the CVD process, providing improved epitaxial conditions that enable the synthesis of the high crystalline quality ZnO nanowire array on a film structure. The high optoelectronic quality of the ZnO nanowire array on a film sample is evidenced by the free exitonic emissions in the low-temperature photoluminescence spectroscopy. A carrier density of ˜1017 cm-3 with an n-type conductivity of the ZnO nanowire array on a film sample is obtained by electrochemical impedance analysis. Finally, the ZnO nanowire array on a film sample is demonstrated to be an ideal template for a further synthesis of a single crystal quality ZnO-ZnGa2O4 core-shell nanowire array on a film structure. The fabricated ZnO-ZnGa2O4 sample revealed an enhanced anticorrosive ability and photoelectrochemical performance when used as a photoanode in a photoelectrochemical water splitting application.

  11. Structural, morphological, optical and compositional characterization of spray deposited Ga doped ZnO thin film for Dye-Sensitized Solar Cell application

    Science.gov (United States)

    Amala Rani, A.; Ernest, Suhashini

    2014-11-01

    Zinc Oxide and Gallium doped Zinc Oxide films have been deposited by the Spray Pyrolysis method onto preheated glass substrates using Zinc acetate and Gallium (III) acetyl acetonate as precursors for Zn and Ga ions, respectively. The effect of ZnO and Ga doping on the structural, morphological, optical and chemical properties of sprayed ZnO and Gallium doped ZnO thin films were investigated. XRD studies reveal that the films are crystalline with hexagonal (wurtzite) crystal structure. The average transparency in the visible range was around 75% for the thin film deposited using Gallium doping. X-ray Photoelectron Spectroscopy (XPS) was utilized to view the changes in the oxidation state of ZnO and Gallium doped ZnO thin films. The ZnO and Gallium doped ZnO thin film has been deposited above the Indium Tin Oxide (ITO) coated glass substrate. The efficiency of the obtained DSSC measured for 0.1 M ZnO thin film by sensitizing for 12 h was, ŋ = 2.5%. Similarly for Gallium doped Zinc Oxide, the efficiency ŋ is found to be 3.9%, 4.1% and 4.3% for every increase in doping of Gallium concentrations which is utilized for the application of Dye-Sensitized Solar Cell.

  12. Epitaxial ZnO Thin Films on a-Plane Sapphire Substrates Grown by Ultrasonic Spray-Assisted Mist Chemical Vapor Deposition

    Science.gov (United States)

    Nishinaka, Hiroyuki; Kamada, Yudai; Kameyama, Naoki; Fujita, Shizuo

    2009-12-01

    High-quality epitaxial ZnO thin films were grown by an ultrasonic spray-assisted mist chemical vapor deposition (CVD) on a-plane sapphire substrates with ZnO buffer layers. The ZnO thin films were grown with c-axis orientation without notable rotational domains. Surface morphologies and electrical properties were markedly improved as an effect of the ZnO buffer layers. The mobility in the ZnO epitaxial (main) layer was estimated to be 90 cm2/(V·s), which is reasonably high compared with those in ZnO layers grown by CVD processes. Photoluminescence at a low temperature (4.5 K) revealed a free A-exiton peak, and that at room temperature showed a strong band-edge peak with little deep-level luminescence.

  13. Investigation of the correlation between dielectric function, thickness and morphology of nano-granular ZnO very thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gilliot, Mickaël, E-mail: mickael.gilliot@univ-reims.fr [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Hadjadj, Aomar [Laboratoire d' Ingénierie et Sciences des Matériaux, Université de Reims Champagne-Ardenne (France); Martin, Jérôme [Laboratoire de Nanotechnologie et d' Instrumentation Optique, Université de Technologie de Troyes (France)

    2015-12-31

    Thin nano-granular ZnO layers were prepared using a sol–gel synthesis and spin-coating deposition process with a thickness ranging between 20 and 120 nm. The complex dielectric function (ϵ) of the ZnO film was determined from spectroscopic ellipsometry measurements. Up to a critical thickness close to 60 nm, the magnitude of both the real and the imaginary parts of ϵ rapidly increases and then slowly tends to values closer to the bulk ZnO material. This trend suggests a drastic change in the film porosity at both sides of this critical thickness, due to the pre-heating and post-crystallization processes, as confirmed by additional characterization of the structure and the morphology of the ZnO films. - Highlights: • c-Axis oriented ZnO thin films were grown with different morphological states. • The morphology and structures are controlled by controlling the thickness. • The optical properties are correlated to morphological evolution. • Two growth behaviors and property evolutions are identified around a critical thickness.

  14. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Science.gov (United States)

    Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

    2017-07-01

    Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  15. Synthesis and characterization of nanostructured undoped and Sn-doped ZnO thin films via sol–gel approach

    Energy Technology Data Exchange (ETDEWEB)

    Aydin, H., E-mail: cihataydin_26@hotmail.com [Department of Metallurgical and Materials Engineering, Engineering Faculty, Tunceli University, Tunceli 62000 (Turkey); El-Nasser, H.M. [Department of Physics, Al al-Bayt University, Mafraq (Jordan); Aydin, C. [Department of Metallurgy and Materials Engineering, Faculty of Technology, Firat University, Elazig 23119 (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Yakuphanoglu, F. [Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589 (Saudi Arabia); Department of Physics, Faculty of Science, Firat University, Elazig 23119 (Turkey); Nanoscience and Nanotechnology Laboratory, Firat University, Elazig 23119 (Turkey)

    2015-09-30

    Graphical abstract: - Highlights: • Sn-doped ZnO films were prepared via facile sol–gel spin coating method. • The grain size of the films changes from 39.23 to 71.84 nm with Sn doping. • The refractive index dispersion of the films obeys the single oscillator model. - Abstract: Thin films of Sn-doped ZnO were prepared via facile sol–gel spin coating method. The structural and optical properties of the films were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and UV-VIS-NIR spectrophotometer. The X-ray results confirmed that all the ZnO thin films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation of (002) plane. The crystallite size and lattice parameter values of the films were obtained. Atomic force microscopy results indicate that the Sn-doped ZnO films have the nanostructure. The grain size values of the films were found to vary from 39.23 to 71.84 nm with Sn doping. The nanostructure of the Sn-doped ZnO films was also confirmed by scanning electron microcopy. The optical bandgaps of the films were calculated for the various Sn contents. The refractive index dispersion curves obey the single oscillator model. The optical constants and dispersion parameters of the ZnO films were changed with Sn doping. The obtained results suggest that the structural and optical properties of ZnO films can be controlled by Sn doping.

  16. Realization of Cu-Doped p-Type ZnO Thin Films by Molecular Beam Epitaxy.

    Science.gov (United States)

    Suja, Mohammad; Bashar, Sunayna B; Morshed, Muhammad M; Liu, Jianlin

    2015-04-29

    Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films, and the best conductivity is achieved with a high hole concentration of 1.54 × 10(18) cm(-3), a low resistivity of 0.6 Ω cm, and a moderate mobility of 6.65 cm(2) V(-1) s(-1) at room temperature. Metal oxide semiconductor capacitor devices have been fabricated on the Cu-doped ZnO films, and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as X-ray diffraction, X-ray photoelectron, Raman, and absorption spectroscopies are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO.

  17. Structural and Magnetic Properties of Mn doped ZnO Thin Film Deposited by Pulsed Laser Deposition

    KAUST Repository

    Baras, Abdulaziz

    2011-07-01

    Diluted magnetic oxide (DMO) research is a growing field of interdisciplinary study like spintronic devices and medical imaging. A definite agreement among researchers concerning the origin of ferromagnetism in DMO has yet to be reached. This thesis presents a study on the structural and magnetic properties of DMO thin films. It attempts to contribute to the understanding of ferromagnetism (FM) origin in DMO. Pure ZnO and Mn doped ZnO thin films have been deposited by pulsed laser deposition (PLD) using different deposition conditions. This was conducted in order to correlate the change between structural and magnetic properties. Structural properties of the films were characterized using x-ray diffraction (XRD) and scanning electron microscopy (SEM). The superconducting quantum interference device (SQUID) was used to investigate the magnetic properties of these films. The structural characterizations showed that the quality of pure ZnO and Mn doped ZnO films increased as oxygen pressure (PO) increased during deposition. All samples were insulators. In Mn doped films, Mn concentration decreased as PO increased. The Mn doped ZnO samples were deposited at 600˚C and oxygen pressure from 50-500mTorr. All Mn doped films displayed room temperature ferromagnetism (RTFM). However, at 5 K a superparamagnetic (SPM) behavior was observed in these samples. This result was accounted for by the supposition that there were secondary phase(s) causing the superparamagnetic behavior. Our findings hope to strengthen existing research on DMO origins and suggest that secondary phases are the core components that suppress the ferromagnetism. Although RTFM and SPM at low temperature has been observed in other systems (e.g., Co doped ZnO), we are the first to report this behavior in Mn doped ZnO. Future research might extend the characterization and exploration of ferromagnetism in this system.

  18. Growth and characterization of thin ZnO films deposited on glass substrates by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mouet, T., E-mail: Toufik_mouet@yahoo.fr [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Laboratoire de Micro-systeme et Instrumentation, departement d' electronique, faculte des sciences de l' ingenieur, Universite Mentouri de Constantine, Route de Ain el-Bey, 25000 Constantine (Algeria); Devers, T. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Telia, A. [Laboratoire de Micro-systeme et Instrumentation, departement d' electronique, faculte des sciences de l' ingenieur, Universite Mentouri de Constantine, Route de Ain el-Bey, 25000 Constantine (Algeria); Messai, Z.; Harel, V. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France); Konstantinov, K. [University of Wollongong, Engineering Faculty, Institute for Superconducting and Electronic Materials, 2522 Wollongong (Australia); Kante, I. [Laboratoire de Microscopies et d' Etude de Nanostructures, UFR Sciences, B.P. 1039, 51687 Reims Cedex (France); Ta, M.T. [Institut PRISME, Universite d' Orleans, LESI-IUT de Chartres, EA 1715, 21 rue Loigny la Bataille, 28000 Chartres (France)

    2010-04-15

    Electrodeposition technique was used in order to produce nanometric zinc oxide films on glass insulating substrates. The effect of electrolyte concentration and applied current density on the formation and growth of electrodeposited Zn thin films in aqueous solutions of ZnSO{sub 4} were studied. After a thermal oxidation, a characterization of the structural morphology of the films deposited was carried out by optical microscopy (OM), atomic force microscopy (AFM), scanning electron microscopy (SEM) and by grazing incidence X-rays diffraction (GIXD). These characterization techniques show that the grains size of the films after oxidation at temperature 450 deg. C is between 5 and 15 nm, as well as the structure is polycrystalline nature with several orientations. UV/vis spectrophotometry confirms that it is possible to obtain transparent good ZnO films with an average transmittance of approximately 80% within the visible wavelength region, as well as the optical gap of obtained ZnO films is 3.17 eV.

  19. Growth process optimization of ZnO thin film using atomic layer deposition

    Science.gov (United States)

    Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

    2016-12-01

    The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

  20. Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Chu, J.B.; Huang, S.M.; Zhang, D.W.; Bian, Z.Q.; Li, X.D.; Sun, Z. [East China Normal University, Engineering Research Center for Nanophotonics and Advanced Instrument, Ministry of Education, Department of Physics, Shanghai (China); Yin, X.J. [Singapore Polytechnic, Advanced Materials Technology Center, Singapore (Singapore)

    2009-06-15

    This paper presents further insights and observations of the chemical bath deposition (CBD) of ZnS thin films using an aqueous medium involving Zn-salt, ammonium sulfate, aqueous ammonia, and thiourea. Results on physical and chemical properties of the grown layers as a function of ammonia concentration are reported. Physical and chemical properties were analyzed using scanning electron microscopy (SEM), X-ray energy dispersive (EDX), and X-ray diffraction (XRD). Rapid growth of nanostructured ZnO films on fluorine-doped SnO{sub 2} (FTO) glass substrates was developed. ZnO films crystallized in a wurtzite hexagonal structure and with a very small quantity of Zn(OH){sub 2} and ZnS phases were obtained for the ammonia concentration ranging from 0.75 to 2.0 M. Flower-like and columnar nanostructured ZnO films were deposited in two ammonia concentration ranges, respectively: one between 0.75 and 1.0 M and the other between 1.4 and 2.0 M. ZnS films were formed with a high ammonia concentration of 3.0 M. The formation mechanisms of ZnO, Zn(OH){sub 2}, and ZnS phases were discussed in the CBD process. The developed technique can be used to directly and rapidly grow nanostructured ZnO film photoanodes. Annealed ZnO nanoflower and columnar nanoparticle films on FTO substrates were used as electrodes to fabricate the dye sensitized solar cells (DSSCs). The DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 0.84%, which is higher compared to that (0.45%) of the cell being constructed using a photoanode of columnar nanoparticle ZnO film. The results have demonstrated the potential applications of CBD nanostructured ZnO films for photovoltaic cells. (orig.)

  1. Nanostructured ZnO thin films by chemical bath deposition in basic aqueous ammonia solutions for photovoltaic applications

    Science.gov (United States)

    Chu, J. B.; Huang, S. M.; Zhang, D. W.; Bian, Z. Q.; Li, X. D.; Sun, Z.; Yin, X. J.

    2009-06-01

    This paper presents further insights and observations of the chemical bath deposition (CBD) of ZnS thin films using an aqueous medium involving Zn-salt, ammonium sulfate, aqueous ammonia, and thioure. Results on physical and chemical properties of the grown layers as a function of ammonia concentration are reported. Physical and chemical properties were analyzed using scanning electron microscopy (SEM), X-ray energy dispersive (EDX), and X-ray diffraction (XRD). Rapid growth of nanostructured ZnO films on fluorine-doped SnO2 (FTO) glass substrates was developed. ZnO films crystallized in a wurtzite hexagonal structure and with a very small quantity of Zn(OH)2 and ZnS phases were obtained for the ammonia concentration ranging from 0.75 to 2.0 M. Flower-like and columnar nanostrucured ZnO films were deposited in two ammonia concentration ranges, respectively: one between 0.75 and 1.0 M and the other between 1.4 and 2.0 M. ZnS films were formed with a high ammonia concentration of 3.0 M. The formation mechanisms of ZnO, Zn(OH)2, and ZnS phases were discussed in the CBD process. The developed technique can be used to directly and rapidly grow nanostructured ZnO film photoanodes. Annealed ZnO nanoflower and columnar nanoparticle films on FTO substrates were used as electrodes to fabricate the dye sensitized solar cells (DSSCs). The DSSC based on ZnO-nanoflower film showed an energy conversion efficiency of 0.84%, which is higher compared to that (0.45%) of the cell being constructed using a photoanode of columnar nanoparticle ZnO film. The results have demonstrated the potential applications of CBD nanostructured ZnO films for photovoltaic cells.

  2. Control of conductivity type in undoped ZnO thin films grown by metalorganic vapor phase epitaxy

    Science.gov (United States)

    Ma, Y.; Du, G. T.; Yang, S. R.; Li, Z. T.; Zhao, B. J.; Yang, X. T.; Yang, T. P.; Zhang, Y. T.; Liu, D. L.

    2004-06-01

    The properties of the ZnO thin films prepared by metalorganic vapor phase epitaxy under various oxygen partial pressures were thoroughly studied. It was found that the conduction type in undoped ZnO epilayers could be controlled by adjusting the family VI precursor, oxygen partial pressure during growth. The films were characteristic of n-type conductivity under oxygen partial pressure lower than 45 Pa. With the increase of oxygen content, the crystallinity of the ZnO thin films was degraded to polycrystalline with additional (10-12) orientation and the intrinsic p-type ZnO was produced as the oxygen partial pressure was larger than 55 Pa. The hole concentration and mobility could reach to 1.59×1016 cm-3 and 9.23 cm2 V-1 s-1, and the resistivity was 42.7 Ω cm. The near-band-edge emission and the deep level emission in photoluminescence (PL) spectra at room temperature were influenced strongly by the oxygen partial pressure. Temperature-dependent PL spectra in n-type ZnO films showed a dominant neutral-donor bound exciton emission, while p-ZnO was dominated by neutral-acceptor bound exciton emission. Both peaks increased in intensity with the decrease of the temperature and shifted to the short-wavelength side. The band that originated from zinc vacancies emerged at a temperature lower than 155 K only in the p-type films. The origin of intrinsic p-type conductivity in ZnO thin films might be related to zinc vacancy.

  3. Light Scattering and Current Enhancement for Microcrystalline Silicon Thin-Film Solar Cells on Aluminium-Induced Texture Glass Superstrates with Double Texture

    Directory of Open Access Journals (Sweden)

    Yunfeng Yin

    2015-01-01

    Full Text Available Microcrystalline silicon (μc-Si:H thin-film solar cells are processed on glass superstrates having both micro- and nanoscale surface textures. The microscale texture is realised at the glass surface, using the aluminium-induced texturing (AIT method, which is an industrially feasible process enabling a wide range of surface feature sizes (i.e., 700 nm–3 μm of the textured glass. The nanoscale texture is made by conventional acid etching of the sputter-deposited transparent conductive oxide (TCO. The influence of the resulting “double texture” on the optical scattering is investigated by means of atomic force microscopy (AFM (studying the surface topology, haze measurements (studying scattering into air, and short-circuit current enhancement measurements (studying scattering into silicon. A predicted enhanced optical scattering efficiency is experimentally proven by a short-circuit current enhancement ΔIsc of up to 1.6 mA/cm2 (7.7% relative increase compared to solar cells fabricated on a standard superstrate, that is, planar glass covered with nanotextured TCO. Enhancing the autocorrelation length (or feature size of the AIT superstrates might have the large potential to improve the μc-Si:H thin-film solar cell efficiency, by reducing the shunting probability of the device while maintaining a high optical scattering performance.

  4. Effect of Post-Deposition Processing on ZnO Thin Films and Devices

    Science.gov (United States)

    Yen, Tingfang; Haungs, Alan; Kim, Sung Jin; Cartwright, Alexander; Anderson, Wayne A.

    2010-05-01

    Post-deposition processing was conducted on ZnO thin films deposited by radio frequency (RF) magnetron sputtering. Rapid thermal annealing (RTA) and ion implantation followed by RTA gave increased conductivity and the latter increased Hall-effect mobility from 1.7 cm2 V-1 s-1 to 9.5 cm2 V-1 s-1 Metal-semiconductor-metal photodetectors (MSM-PDs) had a low dark current, a high ratio of photo to dark current, and a high responsivity of 2.1 A/W. Current transport mechanisms of MSM-PDs with post-annealing exhibited two primary space-charge-limited mechanisms, m > 2 and m film gave one mechanism with m rise and fall times in the range of 12 ns to 29 ns.

  5. Optical and magnetic properties of Ni-implanted and post-annealed ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Okay, C. [Marmara University, Department of Physics, Goztepe-Istanbul (Turkey); Rameev, B.Z. [Kazan Physical-Technical Institute, Kazan (Russian Federation); Gebze Institute of Technology, Department of Physics, Kocaeli (Turkey); Gueler, S.; Akdogan, N.; Aktas, B. [Gebze Institute of Technology, Department of Physics, Kocaeli (Turkey); Khaibullin, R.I.; Khakimova, R.R. [Kazan Physical-Technical Institute, Kazan (Russian Federation); Kazan (Volga Region) Federal University, Institute of Physics, Kazan (Russian Federation); Osin, Y.N. [Kazan Physical-Technical Institute, Kazan (Russian Federation); Gumarov, A.I. [Kazan (Volga Region) Federal University, Institute of Physics, Kazan (Russian Federation); Nefedov, A. [Ruhr-Universitaet Bochum, Lehrstuhl fuer Physikalische Chemie I, Bochum (Germany); Zabel, H. [Ruhr-Universitaet Bochum, Institut fuer Experimentalphysik/Festkoerperphysik, Bochum (Germany)

    2011-08-15

    Single-crystalline ZnO thin films have been grown on sapphire substrates and implanted by 40 keV Ni{sup +} ions with a dose of 0.25-1.25 x 10{sup 17} ions/cm{sup 2}. After implantation the samples have been annealed at T=1000 C for 30 minutes in air. Both as-prepared and annealed nickel-implanted ZnO samples have been investigated by ferromagnetic resonance (FMR), vibrating sample magnetometry (VSM), scanning electron microscopy (SEM), and optical techniques. SEM studies reveal that the surface of non-implanted ZnO thin film is very smooth, while microcracks are present in the Ni-implanted ZnO samples. Annealing after implantation recovers the surface of the implanted ZnO. Energy dispersive X-ray spectroscopy shows that the Ni concentration increases with increasing the implantation dose. Optical measurements of the Ni-implanted ZnO thin films indicate that annealing results in formation of a new phase. This phase is attributed to NiO that appears due to redistribution and oxidation of the implanted Ni ions in the ZnO matrix. Magnetic measurements show that both as-implanted and annealed samples exhibit room-temperature ferromagnetism. VSM data indicate that annealing procedure results in decreasing the magnetic moment per Ni atom and higher coercivity at low temperatures. Magnetic-resonance studies reveal highly anisotropic FMR signal in the as-implanted Ni:ZnO samples starting from the dose of 0.5 x 10{sup 17} ions/cm{sup 2}. We also observe a step-wise increase of the effective magnetization at the dose of 1.0 x 10{sup 17} ions/cm{sup 2}, which is explained by magnetic percolation of the Ni nanoparticles. Narrow resonance signals with unusual angular dependence are observed in magnetic-resonance studies of the annealed Ni:ZnO samples, which have been related to the formation of a system of non-percolated NiO-coated Ni nanoparticles as a result of annealing in air. We did not observe experimental evidence for intrinsic ferromagnetism in the Ni-implanted ZnO thin

  6. Influence of Annealing on Properties of Spray Deposited ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Kalyani Nadarajah

    2013-01-01

    Full Text Available Zinc Oxide (ZnO thin films were deposited on glass substrates via the spray pyrolysis technique. The films were subsequently annealed in ambient air from 300°C to 500°C. The morphology and structural properties of the thin films were studied by field emission scanning electron microscope (FESEM, atomic force microscopy (AFM, and X-ray diffractometry (XRD techniques. Electrical resistivity of the thin films was measured using a data acquisition unit. The optical properties of the films were characterized by UV-vis spectroscopy and photoluminescence (PL technique. X-ray diffraction data showed that the films were grown in the (002 direction with a hexagonal wurtzite structure. The average grain size ranged from 15 to 27 nm. Increasing annealing temperatures resulted in larger grain sizes and higher crystallinity, with the surface roughness of annealed films being more than twice if compared to unannealed film. The electrical resistivity of the films decreased with the increasing annealing temperature. The UV and visible band emissions were observed in the photoluminescence spectra, due to exciton and defect-related emissions, respectively. The transmission values of the films were as high as 90% within the visible range (400–700 nm.

  7. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  8. Fabrication of ZnO Thin-Film Transistors by Chemical Vapor Deposition Method using Zinc Acetate Solution

    Science.gov (United States)

    Alias, Afishah; Hazawa, Kouta; Kawashima, Nobuaki; Fukuda, Hisashi; Uesugi, Katsuhiro

    2011-01-01

    Zinc oxide (ZnO) thin-film transistors (TFTs) were fabricated by thermal chemical vapor deposition (CVD) using aqueous solutions of zinc acetate (ZnAc2) dihydrate as a source. The precursor was supplied to the substrate by the nitrogen bubbling method through a plate with numerous orifices in the ZnAc2 solution. The ZnO thin films were grown on silicon substrates in the growth temperature (TG) range from 280 to 700 °C. The growth rate of ZnO thin films were linearly proportional to the growth temperature, which suggested that the growth rate is limited by the decomposition of ZnAc2. Depletion-mode TFTs with the ZnO film grown at TG = 350 °C was found to exhibit a relatively low saturation mobility (µsat). However, µsat increased from 1 to 14 cm2·V-1·s-1 and the operational mode was changed from the depletion mode to the enhancement mode by annealing treatment at 200 °C for 2 h under N2 ambient.

  9. Tuning of undoped ZnO thin film via plasma enhanced atomic layer deposition and its application for an inverted polymer solar cell

    Directory of Open Access Journals (Sweden)

    Mi-jin Jin

    2013-10-01

    Full Text Available We studied the tuning of structural and optical properties of ZnO thin film and its correlation to the efficiency of inverted solar cell using plasma-enhanced atomic layer deposition (PEALD. The sequential injection of DEZn and O2 plasma was employed for the plasma-enhanced atomic layer deposition of ZnO thin film. As the growth temperature of ZnO film was increased from 100 °C to 300 °C, the crystallinity of ZnO film was improved from amorphous to highly ordered (002 direction ploy-crystal due to self crystallization. Increasing oxygen plasma time in PEALD process also introduces growing of hexagonal wurtzite phase of ZnO nanocrystal. Excess of oxygen plasma time induces enhanced deep level emission band (500 ∼ 700 nm in photoluminescence due to Zn vacancies and other defects. The evolution of structural and optical properties of PEALD ZnO films also involves in change of electrical conductivity by 3 orders of magnitude. The highly tunable PEALD ZnO thin films were employed as the electron conductive layers in inverted polymer solar cells. Our study indicates that both structural and optical properties rather than electrical conductivities of ZnO films play more important role for the effective charge collection in photovoltaic device operation. The ability to tune the materials properties of undoped ZnO films via PEALD should extend their functionality over the wide range of advanced electronic applications.

  10. Effect of texture and grain size on the residual stress of nanocrystalline thin films

    Science.gov (United States)

    Cao, Lei; Sengupta, Arkaprabha; Pantuso, Daniel; Koslowski, Marisol

    2017-10-01

    Residual stresses develop in thin film interconnects mainly as a result of deposition conditions and multiple thermal loading cycles during the manufacturing flow. Understanding the relation between the distribution of residual stress and the interconnect microstructure is of key importance to manage the nucleation and growth of defects that can lead to failure under reliability testing and use conditions. Dislocation dynamics simulations are performed in nanocrystalline copper subjected to cyclic loading to quantify the distribution of residual stresses as a function of grain misorientation and grain size distribution. The outcomes of this work help to evaluate the effect of microstructure in thin films failure by identifying potential voiding sites. Furthermore, the simulations show how dislocation structures are influenced by texture and grain size distribution that affect the residual stress. For example, when dislocation loops reach the opposite grain boundary during loading, these dislocations remain locked during unloading.

  11. Enhanced mobility of Li-doped ZnO thin film transistors fabricated by mist chemical vapor deposition

    Science.gov (United States)

    Jeon, Hye-ji; Lee, Seul-Gi; Kim, H.; Park, Jin-Seong

    2014-05-01

    Mist chemical vapor deposition (mist-CVD)-processed, lithium (Li)-doped ZnO thin film transistors (TFTs) are investigated. Li doping significantly increases the field-effect mobility in TFTs up to ˜100 times greater than that of undoped ZnO. The addition of Li into mist-CVD-grown ZnO semiconductors leads to improved film quality, which results from the enhanced crystallinity and reduced defect states, including oxygen vacancies. Our results suggest that Li doping of ZnO-based oxide semiconductors could serve as an effective strategy for high-performance, mist-CVD-processed oxide TFTs with low-cost and low-temperature fabrication.

  12. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in ZnO

  13. Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films.

    Science.gov (United States)

    Jun, Min-Chul; Park, Sang-Uk; Koh, Jung-Hyuk

    2012-11-22

    We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol-gel spin-coating process. As a starting material, AlCl3⋅6H2O, Ga(NO3)2, and Zn(CH3COO)2⋅2H2O were used. A lowest sheet resistance of 3.3 × 103 Ω/□ was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650°C for 60 min in air. All the films showed more than 85% transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated.

  14. Optical and electrical properties of transparent conducting B-doped ZnO thin films prepared by various deposition methods

    Energy Technology Data Exchange (ETDEWEB)

    Nomoto, Jun-ichi; Miyata, Toshihiro; Minami, Tadatsugu [Optoelectronic Device System R and D Center, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichi, Ishikawa 921-8501 (Japan)

    2011-07-15

    B-doped ZnO (BZO) thin films were prepared with various thicknesses up to about 500 nm on glass substrates at 200 deg. C by dc or rf magnetron sputtering deposition, pulsed laser deposition (PLD), and vacuum arc plasma evaporation (VAPE) methods. Resistivities of 4-6 x 10{sup -4}{Omega} cm were obtained in BZO thin films prepared with a B content [B/(B + Zn) atomic ratio] around 1 at. % by PLD and VAPE methods: Hall mobilities above 40 cm{sup 2}/Vs and carrier concentrations on the order of 10{sup 20} cm{sup -3}. All 500-nm-thick-BZO thin films prepared with a resistivity on the order of 10{sup -3}-10{sup -4}{Omega} cm exhibited an averaged transmittance above 80% in the wavelength range of 400-1100 nm. The resistivity in BZO thin films prepared with a thickness below about 500 nm was found to increase over time with exposure to various high humidity environments. In heat-resistance tests, the resistivity stability of BZO thin films was found to be nearly equal to that of Ga-doped ZnO thin films, so these films were judged suitable for use as a transparent electrode for thin-film solar cells.

  15. Optical and Sensing Properties of Cu Doped ZnO Nanocrystalline Thin Films

    National Research Council Canada - National Science Library

    Shukla, R. K; Srivastava, Anchal; Kumar, Nishant; Pandey, Akhilesh; Pandey, Mamta

    2015-01-01

    Undoped and Cu doped ZnO films of two different molarities deposited by spray pyrolysis using zinc nitrate and cupric chloride as precursors show polycrystalline nature and hexagonal wurtzite structure of ZnO...

  16. Electrodeposition and characterization of ZnO thin films using sodium thiosulfate as an additive for photovoltaic solar cells

    Science.gov (United States)

    Rahal, Hassiba; Kihal, Rafiaa; Affoune, Abed Mohamed; Ghers, Mokhtar; Djazi, Faycal

    2017-06-01

    Zinc oxide thin films have been grown by electrodeposition technique onto Cu and ITO-coated glass substrates from an aqueous zinc nitrate solution with addition of sodium thiosulfate at 90 °C. The effects of sodium thiosulfate on the electrochemical deposition of ZnO were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at -0.60 V vs. SCE and characterized by XRD, SEM, FTIR, optical, photoelectrochemical and electrical measurements. Thickness of the deposited film was measured to be 357 nm. X-ray diffraction results indicated that the synthesized ZnO has a pure hexagonal wurtzite structure with a marked preferential orientation along (002) plane. FTIR results confirmed the presence of ZnO films at peak 558 cm-1. SEM images showed uniform, compact morphology without any cracks and films composed of large flower-like ZnO agglomerates with star-shape. Optical properties of ZnO reveal a high optical transmission (> 80 % ) and high absorption coefficient (α > {10}5 {{cm}}-1) in visible region. The optical energy band gap was found to be 3.28 eV. Photoelectrochemical measurements indicated that the ZnO films had n-type semiconductor conduction. Electrical properties of ZnO films showed a low electrical resistivity of 6.54 {{Ω }}\\cdot {cm}, carrier concentration of -1.3× {10}17 {{cm}}-3 and mobility of 7.35 cm2 V-1 s-1. Project supported by the Algerian Ministry of Higher Education and Scientific Research, Algeria (No. J0101520090018).

  17. Optoelectronic Properties of Nanostructured ZnO Thin Films Prepared on Glass and Transparent Flexible Clay Substrates by Hydrothermal Method

    Science.gov (United States)

    Venkatachalam, Shanmugam; Hayashi, Hiromichi; Ebina, Takeo; Nakamura, Takashi; Nanjo, Hiroshi

    2013-05-01

    In the present work, transparent flexible polymer-doped clay (P-clay) substrates were successfully prepared for flexible hybrid organic-inorganic light emitting diode (HyLED) applications. The thermogravimetric-differential thermal analysis (TG-DTA) curves showed that the thermal resistance of P-clay film was higher than that of plastic substrates. Then indium doped tin oxide (ITO) thin films were prepared on newly fabricated P-clay substrates by ion-beam sputter deposition (IBSD) method. The as-prepared ITO/P-clay samples were annealed at 220 °C for 1 h. The optical transparency and electrical conductivity of annealed ITO film on P-clay with smooth surface were better than that of P-clay with rough surface. ZnO seed layers were prepared on annealed ITO/P-clay, ITO/glass, and clay substrates by IBSD method. Surface morphology study showed that the ZnO seed layer coated ITO/P-clay substrate with smooth surface was very suitable for growing vertically aligned ZnO nanorod arrays. The structural study showed that the ZnO nanorod arrays grown by low-temperature solution growth method have good crystallinity and high purity. Optical study showed that the as-prepared ZnO nanorod arrays have excellent optical properties.

  18. Microwave Assisted Growth of ZnO Nanorods and Nanopolypods Nanostructure Thin Films for Gas and Explosives Sensing

    Directory of Open Access Journals (Sweden)

    A. K. Singh

    2013-01-01

    Full Text Available The growth of uniformly distributed and densely packed array of zinc oxide (ZnO nanorods (NRs and nanorods (NRs/nanopolypods (NPPs was successfully achieved through microwave-assisted chemical route at low temperature. The ZnO NRs and NRs/NPPs were characterized using X-ray diffraction (XRD, scanning electron microscope (SEM, energy dispersive X-ray analysis (EDX, and UV-Vis absorption spectroscopy. The ZnO NRs were of 100–150 nm diameter and 0.5–1 μm length, while the NPPs were of diameter about 150–200 nm and 1.5–2 μm pod length. The prepared films are polycrystalline in nature and highly oriented along (002 plane with a hexagonal wurtzite structure. These films were studied for the sensing properties of liquefied petroleum gas (LPG, oxygen, and hazardous explosives, that is, 2,4,6-trinitrotoluene (TNT and cyclotrimethylenetrinitramines (RDX, in the temperature ranges of 25–425 °C and 100–200 °C, respectively. The grown nanostructure films showed reliable stable response to several on-off cycles, and reduction in sensor recovery time was found with the increase in temperature. ZnO NRs and NRs/NPPs showed better sensitivity and recovery time for both LPG and oxygen, as compared to the literature-reported results for ZnO thin films.

  19. Transparent conducting oxide layers for thin film silicon solar cells

    NARCIS (Netherlands)

    Rath, J.K.|info:eu-repo/dai/nl/304830585; Liu, Y.|info:eu-repo/dai/nl/304831743; de Jong, M.M.|info:eu-repo/dai/nl/325844208; de Wild, J.|info:eu-repo/dai/nl/314641378; Schuttauf, J.A.|info:eu-repo/dai/nl/314118039; Brinza, M.|info:eu-repo/dai/nl/304823325; Schropp, R.E.I.|info:eu-repo/dai/nl/072502584

    2009-01-01

    Texture etching of ZnO:1%Al layers using diluted HCl solution provides excellent TCOs with crater type surface features for the front contact of superstrate type of thin film silicon solar cells. The texture etched ZnO:Al definitely gives superior performance than Asahi SnO2:F TCO in case of

  20. Modeling and characterization of extremely thin absorber (eta) solar cells based on ZnO nanowires.

    Science.gov (United States)

    Mora-Seró, Iván; Giménez, Sixto; Fabregat-Santiago, Francisco; Azaceta, Eneko; Tena-Zaera, Ramón; Bisquert, Juan

    2011-04-21

    Extremely thin absorber (eta)-solar cells based on ZnO nanowires sensitized with a thin layer of CdSe have been prepared, using CuSCN as hole transporting material. Samples with significantly different photovoltaic performance have been analyzed and a general model of their behavior was obtained. We have used impedance spectroscopy to model the device discriminating the series resistance, the role of the hole conducting material CuSCN, and the interface process. Correlating the impedance analysis with the microstructural properties of the solar cell interfaces, a good description of the solar cell performance is obtained. The use of thick CdSe layers leads to high recombination resistances, increasing the open circuit voltage of the devices. However, there is an increase of the internal recombination in thick light absorbing layers that also inhibit a good penetration of CuSCN, reducing the photocurrent. The model will play an important role on the optimization of these devices. This analysis could have important implications for the modeling and optimization of all-solid devices using a sensitizing configuration.

  1. An economic approach to fabricate photo sensor based on nanostructured ZnO thin films

    Science.gov (United States)

    Huse, Nanasaheb; Upadhye, Deepak; Sharma, Ramphal

    2016-05-01

    Nanostructural ZnO Thin Films have been synthesized by simple and economic Chemical Bath Deposition technique onto glass substrate with bath temperature at 60°C for 1 hour. Structural, Optical, Electrical and topographical properties of the prepared Thin Films were investigated by GIXRD, I-V Measurement System, UV-Visible Spectrophotometer and AFM respectively. Calculated lattice parameters are in good agreement with the standard JCPDS card (36-1451) values, exhibits Hexagonal Wurtzite crystal structure. I-V Measurement curve has shown ohmic nature in dark condition and responds to light illumination which reveals Photo sensor properties. After illumination of 60W light, decrease in resistance was observed from 110.9 KΩ to 104.4 KΩ. The change in current and calculated Photo sensitivity was found to be 3.51 µA and 6.3% respectively. Optical band gap was found to be 3.24 eV. AFM images revealed uniform deposition over entire glass substrate with 32.27 nm average roughness of the film.

  2. Low-bandgap, highly c-axis-oriented Al-doped ZnO thin films

    Science.gov (United States)

    Wen, Long; Kumar, Manish; Cho, Hyung Jun; Leksakul, Komgrit; Geon Han, Jeon

    2017-05-01

    Low-bandgap transparent conductive oxides will be of interest to researchers who wish to address the health hazards of blue radiation emission from electronic displays. Here, we present a single-step, low-temperature fast enough (throughput  >  60 nm min-1) process to grow highly c-axis-oriented crystalline Al-doped ZnO thin films via advanced plasma processing. Dual-power DC-magnetron sputtering plasma was employed for the synthesis of thin films. The addition of top power to a pre-existing rectangular power pushed additional ions to a confined plasma and increased the plasma density and electron temperature. The effect of this additional-ion pushing was systematically studied using the microstructure, surface properties, and electronic properties. As a result, bandgap reduction from 3.35 eV to 3.10 eV and tailoring of electrical resistivity (4.89  ×  10-4-8.32  ×  10-3 Ω cm) and Seebeck coefficients (21-48 µV K-1) were achieved in addition to excellent transparency. Given their properties, the obtained films show promise for multifunctional applications, such as in UV and near-blue radiation shielding, transparent conductive electrodes and low-temperature thermoelectrics.

  3. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    Directory of Open Access Journals (Sweden)

    Daria Majchrowicz

    2016-03-01

    Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  4. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  5. Acoustoelectric Effect on the Responses of SAW Sensors Coated with Electrospun ZnO Nanostructured Thin Film

    Directory of Open Access Journals (Sweden)

    Zafer Ziya Ozturk

    2012-08-01

    Full Text Available In this study, zinc oxide (ZnO was a very good candidate for improving the sensitivity of gas sensor technology. The preparation of an electrospun ZnO nanostructured thin film on a 433 MHz Rayleigh wave based Surface Acoustic Wave (SAW sensor and the investigation of the acoustoelectric effect on the responses of the SAW sensor are reported. We prepared an electrospun ZnO nanostructured thin film on the SAW devices by using an electrospray technique. To investigate the dependency of the sensor response on the structure and the number of the ZnO nanoparticles, SAW sensors were prepared with different coating loads. The coating frequency shifts were adjusted to fall between 100 kHz and 2.4 MHz. The sensor measurements were performed against VOCs such as acetone, trichloroethylene, chloroform, ethanol, n-propanol and methanol vapor. The sensor responses of n-propanol have opposite characteristics to the other VOCs, and we attributed these characteristics to the elastic effect/acoustoelectric effect.

  6. Influence of SiO{sub 2} buffer layer on the crystalline quality and photoluminescence of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Xu, L H; Chen, Y L; Xu, F [College of Math and Physics, Nanjing University of Information Science and Technology, Nanjing, 210044 (China); Li, X Y [Department of Applied Physics, Nanjing University of Science and Technology, Nanjing, 210094 (China); Hua, S, E-mail: congyu3256@sina.com [Institute of Electronic Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing, 210094 (China)

    2011-02-01

    In this work, a SiO{sub 2} buffer layer was first grown on Si substrate by thermal oxidation, and then ZnO thin films were deposited on SiO{sub 2} buffer layer and Si substrate by electron beam evaporation and sol-gel method. The influence of SiO{sub 2} buffer layer on the crystalline quality and photoluminescence of the films was investigated. The analyses of X-ray diffraction (XRD) showed that all the ZnO thin films had a hexagonal wurtzite structure and were preferentially oriented along the c-axis perpendicular to the substrate surface. The SiO{sub 2} buffer layer improved the crystalline quality and decreased the stress in ZnO thin films. The surface morphology analyses of the samples indicated that ZnO thin films deposited on SiO{sub 2} buffer layers had densely packed grains which obviously increased compared with those grown on bare Si substrate. The photoluminescence spectra of the samples showed that the ZnO thin films deposited on SiO{sub 2} buffer layers had stronger ultraviolet emission performance. The results suggest that SiO{sub 2} buffer layer can improve the crystalline quality and ultraviolet emission of ZnO thin films.

  7. Effect of Ga doping on micro/structural, electrical and optical properties of pulsed laser deposited ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, S.D. [Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411 007 (India); Deshmukh, A.V. [Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411 007 (India); Department of Physics, College of Engineering, Pune 411 005 (India); Date, S.K. [Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411 007 (India); Sathe, V.G. [UGC-DAE Consortium for Scientific Research, University Campus, Indore-452 017 (India); Adhi, K.P., E-mail: kpa@physics.unipune.ac.in [Centre for Advanced Studies in Materials Science and Condensed Matter Physics, Department of Physics, University of Pune, Pune 411 007 (India)

    2011-12-01

    Undoped and Ga doped ZnO thin films (1% GZO, 3% GZO and 5% GZO) were grown on c-Al{sub 2}O{sub 3} substrates using the 1, 3 and 5 at. wt.% Ga doped ZnO targets by pulsed laser deposition. X-ray diffraction studies revealed that highly c-axis oriented, single phase, undoped and Ga doped ZnO thin films with wurtzite structure were deposited. Micro-Raman scattering analysis showed that Ga doping introduces defects in the host lattice. The E{sub 2}{sup High} mode of ZnO in Ga doped ZnO thin film was observed to shift to higher wavenumber indicating the presence of residual compressive stress. Appearance of the normally Raman inactive B{sub 1} modes (B{sub 1}{sup Low}, 2B{sub 1}{sup Low} and B{sub 1}{sup High}) due to breaking of local translational symmetry, also indicated that defects were introduced into the host lattice due to Ga incorporation. Band gap of the Ga doped ZnO thin films was observed to shift to higher energy with the increase in doping concentration and is explicated by the Burstein-Moss effect. Electrical resistivity measurements of the undoped and GZO thin films in the temperature range 50 to 300 K revealed the metal to semiconductor transition for 3 and 5% GZO thin films.

  8. Structural and magnetic properties of cobalt-doped ZnO thin films on sapphire (0 0 0 1) substrate deposited by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shanying, E-mail: yshy_150@163.com [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Lv, Rongqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China); Wang, Changzheng [School of Physics Science and Information Engineering, Liaocheng University, Liaocheng, Shandong Province, 252059 (China); Liu, Yunyan [School of Science, Shandong University of Technology, Zibo, Shandong Province, 255049 (China); Song, Zeqing [Laiwu Vocational and Technical College, Laiwu, Shandong Province, 271100 (China)

    2013-12-05

    Highlights: •Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited. •ZnLMM Auger spectrum indicated that Zn interstitials existed in thin films. •The lattice constant increasing was ascribed to the stress and interstitial atoms. •The average moment per Co atom related to the distribution of Co{sup 2+} ions and defects. -- Abstract: Co-doped ZnO thin films on sapphire (0 0 0 1) substrates were deposited by PLD at various substrate temperatures in a one Pa oxygen ambient condition. The structural and magnetic properties of as-grown thin films were characterized by using XRD, UV–Visible absorption spectrophotometer, XPS and AGM. All samples possessed wurtzite hexagonal structure of ZnO. Co atoms incorporated into ZnO matrix and substituted for Zn in ZnO lattice, and Zn interstitials existed in as-grown thin films. The c-axis lattice constants of as-deposited thin films were larger than the standard data. Crystallization of as-prepared thin films increased and then decreased with substrate temperatures enhancing. All samples exhibited room-temperature ferromagnetism. The average moment per Co atom was much smaller than that of Co{sup 2+} (3d{sup 7}), due to the different distribution of Co{sup 2+} ions and defects, as well as the different defect concentrations in thin films.

  9. Effect of copper doping sol-gel ZnO thin films: physical properties and sensitivity to ethanol vapor

    Science.gov (United States)

    Boukaous, Chahra; Benhaoua, Boubaker; Telia, Azzedine; Ghanem, Salah

    2017-10-01

    In the present paper, the effect of copper doping ZnO thin films, deposited using a sol-gel dip-coating technique, on the structural, optical and ethanol vapor-sensing properties, was investigated. The range of the doping content is 0 wt. %–5 wt. % Cu/Zn and the films’ properties were studied using x-ray diffraction, scanning electron microscopy and a UV–vis spectrophotometer. The obtained results indicated that undoped and copper-doped zinc oxide thin films have polycrystalline wurtzite structure with (1 0 1) preferred orientation. All samples have a smooth and dense structure free of pinholes. A decrease in the band gap with Cu concentration in the ZnO network was observed. The influence of the dopant on ethanol vapor-sensing properties shows an increase in the film sensitivity to the ethanol vapor within the Cu concentration.

  10. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    Energy Technology Data Exchange (ETDEWEB)

    Pathirane, M., E-mail: minoli.pathirane@uwaterloo.ca; Iheanacho, B.; Lee, C.-H.; Wong, W. S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada); Tamang, A.; Knipp, D. [Research Center for Functional Materials and Nanomolecular Science, Jacobs University Bremen, Bremen 28759 (Germany); Lujan, R. [Electronic Materials and Devices Laboratory, Palo Alto Research Center, Palo Alto, California 93003 (United States)

    2015-10-05

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm–800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  11. Hybrid ZnO nanowire/a-Si:H thin-film radial junction solar cells using nanoparticle front contacts

    Science.gov (United States)

    Pathirane, M.; Iheanacho, B.; Tamang, A.; Lee, C.-H.; Lujan, R.; Knipp, D.; Wong, W. S.

    2015-10-01

    Hydrothermally synthesized disordered ZnO nanowires were conformally coated with a-Si:H thin-films to fabricate three dimensional hybrid nanowire/thin-film structures. The a-Si:H layer formed a radial junction p-i-n diode solar cell around the ZnO nanowire. The cylindrical hybrid solar cells enhanced light scattering throughout the UV-visible-NIR spectrum (300 nm-800 nm) resulting in a 22% increase in short-circuit current density compared to the reference planar p-i-n device. A fill factor of 69% and a total power conversion efficiency of 6.5% were achieved with the hybrid nanowire solar cells using a spin-on indium tin oxide nanoparticle suspension as the top contact.

  12. Effect of surface carbon contamination on the chemical states of N-doped ZnO thin films

    Science.gov (United States)

    Zhang, Hong; Li, Wanjun; Qin, Guoping; Fang, Liang; Ruan, Haibo; Tan, Mi; Wu, Fang; Kong, Chunyang

    2018-02-01

    Nitrogen-doped ZnO thin films [ZnO:N] and intentional surface carbon-contaminated ZnO:N thin films [ZnO:N@C] were grown on quartz substrates by radio frequency magnetron sputtering deposition method. The structural, electrical and optical properties as well as chemical states of elements were investigated by means of X-ray diffraction (XRD), Hall effect measurement (Hall), UV-Vis-Near infrared spectrophotometer and X-ray photoelectron spectroscopy (XPS). The results indicate that surface carbon contamination almost does not affect the band gap of ZnO:N thin films but has a strong impact on the crystal quality of ZnO:N thin film surface and results in a significant increase in tensile stress. The XPS analysis shows that the effect of surface carbon contamination treatment on the chemical states of ZnO:N thin films is remarkable. Because the stability of Zn-N bonds in N-rich local environments is nowhere near that of those in O-rich local environments, the N atoms in N-rich local environments easily bond with surface carbon atoms to form undesirable C-N bonds, thus resulting in a decrease of NO acceptors in N-rich local environments. Obviously, it is unfavorable to subsequently prepare high stability of N-doped p-type ZnO thin films.

  13. High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.

    Science.gov (United States)

    Nomoto, Junichi; Makino, Hisao; Yamamoto, Tetsuya

    2016-12-01

    Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).

  14. The frequency-dependent AC photoresistance behavior of ZnO thin films grown on different sapphire substrates.

    Science.gov (United States)

    Cholula-Díaz, Jorge L; Barzola-Quiquia, José; Videa, Marcelo; Yin, Chunhai; Esquinazi, Pablo

    2017-09-13

    Zinc oxide (ZnO) thin films were grown by pulsed layer deposition under an N 2 atmosphere at low pressures on a- and r-plane sapphire substrates. Structural studies using X-ray diffraction confirmed that all films had a wurtzite phase. ZnO thin films on a- and r-plane sapphire have grown with orientations along the [0002] and [112[combining macron]0] directions, respectively. Room temperature photoluminescence measurements indicate that the presence of native point defects (interstitial zinc, oxygen vacancies, oxygen antisites and zinc vacancies) is more preponderant for ZnO thin films grown on the r-plane sapphire substrate than the sample grown on the a-plane sapphire substrate. Room temperature impedance spectroscopy measurements were performed in an alternating current frequency range from 40 to 10 5 Hz in the dark and under normal light. An unusual positive photoresistance effect is observed at frequencies above 100 kHz, which we suggest to be due to intrinsic defects present in the ZnO thin films. Furthermore, an analysis of the optical time response revealed that the film grown on the r-plane sapphire substrate responds faster (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.05, 0.26 and 6.00 min, respectively) than the film grown on the a-plane sapphire substrate (characteristic relaxation times for τ 1 , τ 2 and τ 3 of 0.10, 0.73 and 4.02 min, respectively).

  15. Room temperature optical and magnetic properties of (Cu, K) doped ZnO based diluted magnetic semiconductor thin films grown by chemical bath deposition method

    Science.gov (United States)

    Shanmuganathan, G.; Shameem Banu, I. B.

    2014-11-01

    ZnO based diluted magnetic semiconductor thin films were prepared by simultaneously doping the non-magnetic Cu and K in the cation sites of the host ZnO employing the chemical bath deposition method. In this study, K was kept at a concentration of 1% and Cu concentration was varied at 1%, 2%, 3% and 4%. For comparative study, 1% K doped ZnO was also prepared. The influence of K and Cu doping on the transmittance, band gap and magnetic properties were investigated. The XRD revealed that the thin films are polycrystalline and has hexagonal wurtzite crystal structure of ZnO without any secondary phases. Well developed hexagonal structures are observed from the surface morphology. The transmittance shows a significant variation when Cu is incorporated at different doping levels along with K and the band gap change is significant for higher concentration. The room temperature magnetic hysteresis revealed the typical ferromagnetic behavior of K doped and (K, Cu) doped ZnO thin films. The K and Cu doped ZnO thin film exhibited enhanced magnetization compared to K doped ZnO thin film. The present study reveals that the magnetic results of the K and Cu doped ZnO are markedly better than that of the Cu doped ZnO reported by other experiments. The magnetic properties have been explained on the basis of the photoluminescence spectrum. The origin of ferromagnetism is due to the p-d hybridization which has the influence on the band gap also.

  16. Phase formation and texture of thin nickel germanides on Ge(001) and Ge(111)

    Energy Technology Data Exchange (ETDEWEB)

    De Schutter, B., E-mail: deschutter.bob@ugent.be; Detavernier, C. [Department of Solid-State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent (Belgium); Van Stiphout, K.; Santos, N. M.; Vantomme, A. [Instituut voor Kern- en Stralingsfysica, KU Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Bladt, E.; Bals, S. [Electron Microscopy for Materials Research (EMAT), University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp (Belgium); Jordan-Sweet, J.; Lavoie, C. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Comrie, C. M. [Department of Physics, University of Cape Town, Rondebosch 7700 (South Africa)

    2016-04-07

    We studied the solid-phase reaction between a thin Ni film and a single crystal Ge(001) or Ge(111) substrate during a ramp anneal. The phase formation sequence was determined using in situ X-ray diffraction and in situ Rutherford backscattering spectrometry (RBS), while the nature and the texture of the phases were studied using X-ray pole figures and transmission electron microscopy. The phase sequence is characterized by the formation of a single transient phase before NiGe forms as the final and stable phase. X-ray pole figures were used to unambiguously identify the transient phase as the ϵ-phase, a non-stoichiometric Ni-rich germanide with a hexagonal crystal structure that can exist for Ge concentrations between 34% and 48% and which forms with a different epitaxial texture on both substrate orientations. The complementary information gained from both RBS and X-ray pole figure measurements revealed a simultaneous growth of both the ϵ-phase and NiGe over a small temperature window on both substrate orientations.

  17. Characterization of ZnO thin films grown on different p-Si substrate elaborated by solgel spin-coating method

    Energy Technology Data Exchange (ETDEWEB)

    Chebil, W., E-mail: Chbil.widad@live.fr [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Fouzri, A. [Laboratoire Physico-chimie des Matériaux, Unité de Service Commun de Recherche “High resolution X-ray diffractometer”, Département de Physique, Université de Monastir, Faculté des Sciences de Monastir, Avenue de l’Environnement, 5019 Monastir (Tunisia); Institut Supérieur des Sciences Appliquées et de Technologie de Sousse, Université de Sousse (Tunisia); Fargi, A. [Laboratoire de Microélectronique et Instrumentation, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l’environnement, 5019 Monastir (Tunisia); Azeza, B.; Zaaboub, Z. [Laboratoire Micro-Optoélectroniques et Nanostructures, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l' environnement, 5019 Monastir (Tunisia); and others

    2015-10-15

    Highlights: • High quality ZnO thin films grown on different p-Si substrates were successful obtained by sol–gel process. • PL measurement revealed that ZnO thin film grown on porous Si has the better optical quality. • I–V characteristics for all heterojunctions exhibit successful diode formation. • The diode ZnO/PSi shows a better photovoltaic effect under illumination with a maximum {sub Voc} of 0.2 V. - Abstract: In this study, ZnO thin films are deposited by sol–gel technique on p-type crystalline silicon (Si) with [100] orientation, etched silicon and porous silicon. The structural analyses showed that the obtained thin films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented along the c-axis direction. Morphological study revealed the presence of rounded and facetted grains irregularly distributed on the surface of all samples. PL spectra at room temperature revealed that ZnO thin film grown on porous Si has a strong UV emission with low defects in the visible region comparing with ZnO grown on plat Si and etched Si surface. The heterojunction parameters were evaluated from the (I–V) under dark and illumination at room temperature. The ideality factor, barrier height and series resistance of heterojunction grown on different p-Si substrates are determined by using different methods. Best electrical properties are obtained for ZnO layer deposited on porous silicon.

  18. Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance

    Science.gov (United States)

    Medina-Montes, Maria I.; Baldenegro-Perez, Leonardo A.; Sanchez-Zeferino, Raul; Rojas-Blanco, Lizeth; Becerril-Silva, Marcelino; Quevedo-Lopez, Manuel A.; Ramirez-Bon, Rafael

    2016-09-01

    ZnO thin films were processed by radio frequency magnetron sputtering at room temperature on p-Si/SiO2 substrates under pure argon (Ar:O2 = 100:0 vol.%) and argon-oxygen mixture (Ar:O2 = 99:1 vol.%) gas environment. Morphological, optical and electrical characteristics of the ZnO films are reported, and they show a clear relationship with the gas mixture employed for the sputtering process. Scanning Electron Microscopy revealed the formation of grains of 15.3 and 19.9 nm average sizes and thicknesses of 59 nm and 82 nm for films growth in pure argon and argon-oxygen, respectively. Photoluminescence measurements at room temperature showed the violet emission band (centered at 3 eV) which was only detected in the ZnO film grown under pure argon. From thermally stimulated conductivity measurements two traps with 0.27 and 0.14 eV activation energies were identified for films grown in pure argon and argon-oxygen mixture, respectively. The trap at 0.27 eV is associated with a level located below the conduction band edge and it is supported by the PL band centered at 3 eV. Both types of ZnO films were used as the active channel layer in thin film transistors with thermal SiO2 as gate dielectric. Field effect mobility, threshold voltage and current ratio were improved in the devices with ZnO channel deposited with the argon-oxygen mixture (99% Ar/1% O2 vol.). Threshold voltage decreased from 25 V to 15 V, field effect mobility and current ratio increased from 0.8 to 2.4 cm2/Vs and from 102 to 106, in that order.

  19. The ultraviolet photoconductive detector based on Al-doped ZnO thin film with fast response

    Science.gov (United States)

    Sun, Jian; Dai, Qian; Liu, FengJuan; Huang, HaiQin; Li, ZhenJun; Zhang, XiQing; Wang, YongSheng

    2011-01-01

    We report fabrication and characterization of metal-semiconductor-metal photoconductive detectors based on Al-doped ZnO thin films fabricated by radio frequency magnetron sputtering. Optical and structural properties of the thin films were characterized using various techniques. At 6 V bias, a responsivity higher than 4 A/W in the wavelength shorter than 350 nm was obtained, and this responsibility dropped quickly and reached the noise floor in the visible region. Transient response measurement revealed that the detector had a fast photoresponse with a rise time of 9 ns and a fall time of 1.2 μs.

  20. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature

    Science.gov (United States)

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-03-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

  1. Visible and UV photo-detection in ZnO nanostructured thin films via simple tuning of solution method.

    Science.gov (United States)

    Khokhra, Richa; Bharti, Bandna; Lee, Heung-No; Kumar, Rajesh

    2017-11-08

    This study demonstrates significant visible light photo-detection capability of pristine ZnO nanostructure thin films possessing substantially high percentage of oxygen vacancies [Formula: see text] and zinc interstitials [Formula: see text], introduced by simple tuning of economical solution method. The demonstrated visible light photo-detection capability, in addition to the inherent UV light detection ability of ZnO, shows great dependency of [Formula: see text] and [Formula: see text] with the nanostructure morphology. The dependency was evaluated by analyzing the presence/percentage of [Formula: see text] and [Formula: see text] using photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS) measurements. Morphologies of ZnO viz. nanoparticles (NPs), nanosheets (NSs) and nanoflowers (NFs), as a result of tuning of synthesis method contended different concentrations of defects, demonstrated different photo-detection capabilities in the form of a thin film photodetector. The photo-detection capability was investigated under different light excitations (UV; 380~420 nm, white ; λ > 420 nm and green; 490~570 nm). The as fabricated NSs photodetector possessing comparatively intermediate percentage of [Formula: see text] ~ 47.7% and [Formula: see text] ~ 13.8% exhibited superior performance than that of NPs and NFs photodetectors, and ever reported photodetectors fabricated by using pristine ZnO nanostructures in thin film architecture. The adopted low cost and simplest approach makes the pristine ZnO-NSs applicable for wide-wavelength applications in optoelectronic devices.

  2. ZnO Nanoparticles/Reduced Graphene Oxide Bilayer Thin Films for Improved NH3-Sensing Performances at Room Temperature.

    Science.gov (United States)

    Tai, Huiling; Yuan, Zhen; Zheng, Weijian; Ye, Zongbiao; Liu, Chunhua; Du, Xiaosong

    2016-12-01

    ZnO nanoparticles and graphene oxide (GO) thin film were deposited on gold interdigital electrodes (IDEs) in sequence via simple spraying process, which was further restored to ZnO/reduced graphene oxide (rGO) bilayer thin film by the thermal reduction treatment and employed for ammonia (NH3) detection at room temperature. rGO was identified by UV-vis absorption spectra and X-ray photoelectron spectroscope (XPS) analyses, and the adhesion between ZnO nanoparticles and rGO nanosheets might also be formed. The NH3-sensing performances of pure rGO film and ZnO/rGO bilayer films with different sprayed GO amounts were compared. The results showed that ZnO/rGO film sensors exhibited enhanced response properties, and the optimal GO amount of 1.5 ml was achieved. Furthermore, the optimal ZnO/rGO film sensor showed an excellent reversibility and fast response/recovery rate within the detection range of 10-50 ppm. Meanwhile, the sensor also displayed good repeatability and selectivity to NH3. However, the interference of water molecules on the prepared sensor is non-ignorable; some techniques should be researched to eliminate the effect of moisture in the further work. The remarkably enhanced NH3-sensing characteristics were speculated to be attributed to both the supporting role of ZnO nanoparticles film and accumulation heterojunction at the interface between ZnO and rGO. Thus, the proposed ZnO/rGO bilayer thin film sensor might give a promise for high-performance NH3-sensing applications.

  3. Electrochemical Synthesis of ZnO Nanorods/Nanotubes/Nanopencils on Transparent Aluminium-Doped Zinc Oxide Thin Films for Photocatalytic Applications.

    Science.gov (United States)

    Le, Thi Ngoc Tu; Pham, Tan Thi; Ngo, Quang Minh; Vu, Thi Hanh Thu

    2015-09-01

    We report an electrochemical synthesis of homogeneous and well-aligned ZnO nanorods (NRs) on transparent conducting aluminium-doped zinc oxide (AZO) thin films as electrodes. The selected ZnO NRs was then chemically corroded in HCl and KCl aqueous solutions to form nanopencils (NPs), and nanotubes (NTs), respectively. A DC magnetron sputtering was employed to fabricate AZO thin films at various thicknesses. The obtained AZO thin films have a c-direction orientation, transmittance above 80% in visible region, and sheet resistance approximately 40 Ω/sq. They are considered to be relevant as electrodes and seeding layers for electrochemical. The ZnO NRs are directly grown on the AZOs without a need of catalysts or additional seeding layers at temperature as low as 85 degrees C. Their shapes are strongly associated with the AZO thickness that provides a valuable way to control the diameter of ZnO NRs grown atop. With the addition of HCI and KCl aqueous solutions, ZnO NRs were modified their shape to NPs and NTs with the reaction time, respectively. All the ZnO NRs, NPs, and NTs are preferred to grow along c-direction that indicates a lattice matching between AZO thin films and ZnO nanostructrures. Photoluminescence spectra and XRD patterns show that they have good crystallinities. A great photocatalytic activity of ZnO nanostructures promises potential application in environmental treatment and protection. The ZnO NTs exhibits a higher photocatalysis than others possibly due to the oxygen vacancies on the surface and the polarizability of Zn2+ and O2-.

  4. Study of Ultraviolet Emission Spectra in ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Y. M. Lu

    2013-01-01

    Full Text Available Photoluminescence (PL of ZnO thin films prepared on c-Al2O3 substrates by pulsed laser deposition (PLD are investigated. For all samples, roomtemperature (RT spectra show a strong band-edge ultraviolet (UV emission with a pronounced low-energy band tail. The origin of this UV emission is analyzed by the temperature dependence of PL spectra. The result shows that the UV emission at RT contains different recombination processes. At low temperature donor-bound exciton (D0X emission plays a major role in PL spectra, while the free exciton transition (FX gradually dominates the spectrum with increasing temperatures. It notes that at low temperature an emission band (FA appears in low energy side of D0X and FX and can survive up to RT. Further confirmation shows that the origin of the band FA can be attributed to the transitions of conduction band electrons to acceptors (e, A0, in which the acceptor binding energy is estimated to be approximately 121 meV. It is concluded that at room temperature UV emission originates from the corporate contributions of the free exciton and free electrons-to-acceptor transitions.

  5. Annealing effect on properties of transparent and conducting ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouderbala, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)], E-mail: boudermstf@yahoo.fr; Hamzaoui, S.; Adnane, M.; Sahraoui, T.; Zerdali, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)

    2009-01-01

    This work presents the effect of postdeposition annealing on the structural, electrical and optical properties of undoped ZnO (zinc oxide) thin films, prepared by radio-frequency sputtering method. Two samples, 0.17 and 0.32 {mu}m-thick, were annealed in vacuum from room temperature to 350 deg. C while another 0.32 {mu}m-thick sample was annealed in air at 300 deg. C for 1 h. X-ray diffraction analysis revealed that all the films had a c-axis orientation of the wurtzite structure normal to the substrate. Electrical measurements showed that the resistivity of samples annealed in vacuum decreased gradually with the increase of annealing temperature. For the 0.32 {mu}m-thick sample, the gradual decrease of the resistivity was essentially due to a gradual increase in the mobility. On the other hand, the resistivity of the sample annealed in air increased strongly. The average transmission within the visible wavelength region for all films was higher than 80%. The band gap of samples annealed in vacuum increased whereas the band gap of the one annealed in air decreased. The main changes observed in all samples of this study were explained in terms of the effect of oxygen chemisorption and microstructural properties.

  6. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  7. Weak localization and percolation effects in annealed In2O3-ZnO thin films

    Directory of Open Access Journals (Sweden)

    B. Shinozaki

    2011-09-01

    Full Text Available We have investigated the temperature T and magnetic field H dependences of the sheet resistance R□ of thin (In2O30.975-(ZnO0.025 films with different resistivities and carrier densities prepared by postannealing in air at various annealing temperatures Ta. Regarding the magnetoconductance Δσ(H ≡ 1/R□(H − 1/R□(0 of films with large values of sheet resistance R□, agreement between weak localization theory and the data cannot be obtained for any value of the localization length L in (T=Dτ in (T, where D and τin are the diffusion constant and inelastic scattering time, respectively. Taking account of the inhomogeneous morphology confirmed by Scanning Electron Microscopy (SEM observation, we introduced the effective sheet resistance R□eff given by R□eff = α × R□meas., where the strength of reduction factor α is less than unit, α ⩽ 1. Using a suitable value of α(Ta, we successfully fitted the theory to data for Δσeff(H, T, regarding Lin2(T as a fitting parameter in the region 2.0 K⩽T ⩽ 50 K. It was confirmed that the rate 1/τin(T is given by the sum of the electron-electron and electron-phonon inelastic scattering rates.

  8. Structural and Optical Properties of Group III Doped Hydrothermal ZnO Thin Films

    KAUST Repository

    Mughal, Asad J.

    2017-01-11

    In this work, we employ a simple two-step growth technique to deposit impurity doped heteroepitaxial thin films of (0001) ZnO onto (111) MgAl2O4 spinel substrates through a combination of atomic layer deposition (ALD) and hydrothermal growth. The hydrothermal layer is doped with Al, Ga, and In through the addition of their respective nitrate salts. We evaluated the effect that varying the concentrations of these dopants has on both the structural and optical properties of these films. It was found that the epitaxial ALD layer created a ⟨111⟩MgAl2O4∥⟨0001⟩ZnO out-of-plane orientation and a ⟨1¯1¯2⟩MgAl2O4∥∥⟨011¯0⟩ZnO in-plane orientation between the film and substrate. The rocking curve line widths ranged between 0.75° and 1.80° depending on dopant concentration. The optical bandgap determined through the Tauc method was between 3.28 eV and 3.39 eV and showed a Burstein-Moss shift with increasing dopant concentration.

  9. Ferromagnetism and Conductivity in Hydrogen Irradiated Co-Doped ZnO Thin Films.

    Science.gov (United States)

    Di Trolio, A; Alippi, P; Bauer, E M; Ciatto, G; Chu, M H; Varvaro, G; Polimeni, A; Capizzi, M; Valentini, M; Bobba, F; Di Giorgio, C; Amore Bonapasta, A

    2016-05-25

    Impressive changes in the transport and ferromagnetic properties of Co-doped ZnO thin films have been obtained by postgrowth hydrogen irradiation at temperatures of 400 °C. Hydrogen incorporation increases the saturation magnetization by one order of magnitude (up to ∼1.50 μB/Co) and increases the carrier density and mobility by about a factor of two. In addition to the magnetic characterization, the transport and structural properties of hydrogenated ZnO:Co have been investigated by Hall effect, local probe conductivity measurements, micro-Raman, and X-ray absorption spectroscopy. Particular care has been given to the detection of Co oxides and metal Co nanophases, whose influence on the increase in the transport and ferromagnetic properties can be excluded on the ground of the achieved results. The enhancement in ferromagnetism is directly related to the dose of H introduced in the samples. On the contrary, despite the shallow donor character of H atoms, the increase in carrier density n is not related to the H dose. These apparently contradictory effects of H are fully accounted for by a mechanism based on a theoretical model involving Co-VO (Co-O vacancy) pairs.

  10. Surface characterization and cathodoluminescence degradation of ZnO thin films

    Science.gov (United States)

    Hasabeldaim, E.; Ntwaeaborwa, O. M.; Kroon, R. E.; Craciun, V.; Coetsee, E.; Swart, H. C.

    2017-12-01

    ZnO thin films were successfully synthesized by the sol-gel method using the spin coater technique. The films were annealed at 600 °C in air for two hours and in Ar/H2(5%) flow for 30 and 60 min, respectively. Structural analysis, surface morphology and characterization, as well as optical analysis (photoluminescence and cathodeluminescence (CL)) were done on the samples and discussed in detail. CL degradation during prolonged electron irradiation on the films was also determined. A preferential orientation of the c-axis perpendicular to the surface was observed from X-ray diffraction data showing the peak from the (002) plane for the films annealed in both the air and in the H2 flow. The film annealed in air exhibited a broad visible emission as well as a strong ultraviolet emission. A single-green emission peak around 511 nm was obtained from the film that was annealed in Ar/H2 flow for 60 min. The CL study revealed that the intensity of the green emission (511 nm) was very stable during electron bombardment for electron doses of more than 160 C/cm2.

  11. Bias-voltage dependent ultraviolet photodetectors prepared by GaO{sub x} + ZnO mixture phase nanocrystalline thin films

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Rongxin, E-mail: rxwang2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Yang, Lechen [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Xu, Shijie [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China); Department of Physics and HKU-CAS Joint Laboratory on New Materials, The University of Hong Kong, Pokfulam Road, Hong Kong (China); Zhang, Xiaodong; Dong, Xue; Zhao, Yingchun; Fu, Kai; Zhang, Baoshun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123 (China)

    2013-07-25

    Highlights: •GaO{sub x} + ZnO thin films sputtered and annealed exhibit interesting and unique optical properties, especially deep UV photo response. •GaO{sub x} + ZnO thin films can be used to fabricate efficient deep UV photodetectors. •The mixture phase nature of GaO{sub x} + ZnO thin films is revealed to be responsible for the unique characteristics of the photodetectors. •Two bands in UV range can be adjusted by a applied voltage when the PDs were fabricated using the mixture phase nature of GaO{sub x} + ZnO thin films. -- Abstract: Ultraviolet (UV) photodetectors were prepared by using the GaO{sub x} + ZnO mixture phase thin films sputtered on sapphire as the photoresponse layer. The devices show good photoresponse in UV range. More interestingly, the device responsivity in the wavelength less than 280 nm range rapidly increases with increasing the applied voltage and becomes dominant for the bias ⩾3.0 V. X-ray diffraction, absorption and cathodoluminescence measurements firmly reveal the mixture phases in the thin films. Electric field dependent detrapping of photo-excited carriers in nanocrystals in the films shall be responsible for the observed bias-voltage dependent deep UV photoresponse of the devices.

  12. Transparent conducting oxide contacts and textured metal back reflectors for thin film silicon solar cells

    Science.gov (United States)

    Franken, R. H.-J.

    2006-09-01

    With the growing population and the increasing environmental problems of the 'common' fossil and nuclear energy production, the need for clean and sustainable energy sources is evident. Solar energy conversion, such as in photovoltaic (PV) systems, can play a major role in the urgently needed energy transition in electricity production. At the present time PV module production is dominated by the crystalline wafer technology. Thin film silicon technology is an alternative solar energy technology that operates at lower efficiencies, however, it has several significant advantages, such as the possibility of deposition on cheap (flexible) substrates and the much smaller silicon material consumption. Because of the small thickness of the solar cells, light trapping schemes are needed in order to obtain enough light absorption and current generation. This thesis describes the research on thin film silicon solar cells with the focus on the optimization of the transparent conducting oxide (TCO) layers and textured metal Ag substrate layers for the use as enhanced light scattering back reflectors in n-i-p type of solar cells. First we analyzed ZnO:Al (TCO) layers deposited in an radio frequent (rf) magnetron deposition system equipped with a 7 inch target. We have focused on the improvement of the electrical properties without sacrificing the optical properties by increasing the mobility and decreasing the grain boundary density. Furthermore, we described some of the effects on light trapping of ZnO:Al enhanced back reflectors. The described effects are able to explain the observed experimental data. Furthermore, we present a relation between the surface morphology of the Ag back contact and the current enhancement in microcrystalline (muc-Si:H) solar cells. We show the importance of the lateral feature sizes of the Ag surface on the light scattering and introduce a method to characterize the quality of the back reflector by combining the vertical and lateral feature sizes

  13. Effect of reduced graphene oxide-hybridized ZnO thin films on the photoinactivation of Staphylococcus aureus and Salmonella enterica serovar Typhi.

    Science.gov (United States)

    Teh, Swe Jyan; Yeoh, Soo Ling; Lee, Kian Mun; Lai, Chin Wei; Abdul Hamid, Sharifah Bee; Thong, Kwai Lin

    2016-08-01

    The immobilization of photocatalyst nanoparticles on a solid substrate is an important aspect for improved post-treatment separation and photocatalyst reactor design. In this study, we report the simple preparation of reduced graphene oxide (rGO)-hybridized zinc oxide (ZnO) thin films using a one-step electrochemical deposition, and investigated the effect of rGO-hybridization on the photoinactivation efficiency of ZnO thin films towards Staphylococcus aureus (S. aureus) and Salmonella enterica serovar Typhi (S. Typhi) as target bacterial pathogens. Field-emission scanning electron microscopy (FESEM) revealed the formation of geometric, hexagonal flakes of ZnO on the ITO glass substrate, as well as the incorporation of rGO with ZnO in the rGO/ZnO thin film. Raman spectroscopy indicated the successful incorporation of rGO with ZnO during the electrodeposition process. Photoluminescence (PL) spectroscopy indicates that rGO hybridization with ZnO increases the amount of oxygen vacancies, evidenced by the shift of visible PL peak at 650 to 500nm. The photoinactivation experiments showed that the thin films were able to reduce the bacterial cell density of Staph. aureus and S. Typhi from an initial concentration of approximately 10(8) to 10(3)CFU/mL within 15min. The rGO/ZnO thin film increased the photoinactivation rate for S. aureus (log[N/No]) from -5.1 (ZnO) to -5.9. In contrast, the application of rGO/ZnO thin film towards the photoinactivation of S. Typhi did not improve its photoinactivation rate, compared to the ZnO thin film. We may summarise that (1) rGO/ZnO was effective to accelerate the photoinactivation of S. aureus but showed no difference to improve the photoinactivation of S. Typhi, in comparison to the performance of ZnO thin films, and (2) the photoinactivation in the presence of ZnO and rGO/ZnO was by ROS damage to the extracellular wall. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. 7-Octenyltrichrolosilane/trimethyaluminum hybrid dielectrics fabricated by molecular-atomic layer deposition on ZnO thin film transistors

    Science.gov (United States)

    Huang, Jie; Lee, Mingun; Lucero, Antonio T.; Cheng, Lanxia; Ha, Min-Woo; Kim, Jiyoung

    2016-06-01

    We demonstrate the fabrication of 7-octenytrichlorosilane (7-OTS)/trimethylaluminum (TMA) organic-inorganic hybrid films using molecular-atomic layer deposition (MALD). The properties of 7-OTS/TMA hybrid films are extensively investigated using transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM), and electrical measurements. Our results suggest that uniform and smooth amorphous hybrid thin films with excellent insulating properties are obtained using the MALD process. Films have a relatively high dielectric constant of approximately 5.0 and low leakage current density. We fabricate zinc oxide (ZnO) based thin film transistors (TFTs) using 7-OTS/TMA hybrid material as a back gate dielectric with the top ZnO channel layer deposited in-situ via MALD. The ZnO TFTs exhibit a field effect mobility of approximately 0.43 cm2 V-1 s-1, a threshold voltage of approximately 1 V, and an on/off ratio of approximately 103 under low voltage operation (from -3 to 9 V). This work demonstrates an organic-inorganic hybrid gate dielectric material potentially useful in flexible electronics application.

  15. Transparent conductive ZnO layers on polymer substrates: Thin film deposition and application in organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Dosmailov, M. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Leonat, L.N. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Patek, J. [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Roth, D.; Bauer, P. [Institute of Experimental Physics, Johannes Kepler University Linz, A-4040 Linz (Austria); Scharber, M.C.; Sariciftci, N.S. [Linz Institute for Organic Solar Cells (LIOS)/Institute of Physical Chemistry, Johannes Kepler University Linz, A-4040 Linz (Austria); Pedarnig, J.D., E-mail: johannes.pedarnig@jku.at [Institute of Applied Physics, Johannes Kepler University Linz, A-4040 Linz (Austria)

    2015-09-30

    Aluminum doped ZnO (AZO) and pure ZnO thin films are grown on polymer substrates by pulsed-laser deposition and the optical, electrical, and structural film properties are investigated. Laser fluence, substrate temperature, and oxygen pressure are varied to obtain transparent, conductive, and stoichiometric AZO layers on polyethylene terephthalate (PET) that are free of cracks. At low fluence (1 J/cm{sup 2}) and low pressure (10{sup −3} mbar), AZO/PET samples of high optical transmission in the visible range, low electrical sheet resistance, and high figure of merit (FOM) are produced. AZO films on fluorinated ethylene propylene have low FOM. The AZO films on PET substrates are used as electron transport layer in inverted organic solar cell devices employing P3HT:PCBM as photovoltaic polymer-fullerene bulk heterojunction. - Highlights: • Aluminum doped and pure ZnO thin films are grown on polyethylene terephthalate. • Growth parameters laser fluence, temperature, and gas pressure are optimized. • AZO films on PET have high optical transmission and electrical conductance (FOM). • Organic solar cells on PET using AZO as electron transport layer are made. • Power conversion efficiency of these OSC devices is measured.

  16. Electrical properties of solution-deposited ZnO thin-film transistors by low-temperature annealing.

    Science.gov (United States)

    Lim, Chul; Oh, Ji Young; Koo, Jae Bon; Park, Chan Woo; Jung, Soon-Won; Na, Bock Soon; Chu, Hye Yong

    2014-11-01

    Flexible oxide thin-film transistors (Oxide-TFTs) have emerged as next generation transistors because of their applicability in electronic device. In particular, the major driving force behind solution-processed zinc oxide film research is its prospective use in printing for electronics. A low-temperature process to improve the performance of solution-processed n-channel ZnO thin-film transistors (TFTs) fabricated via spin-coating and inkjet-printing is introduced here. ZnO nanoparticles were synthesized using a facile sonochemical method that was slightly modified based on a previously reported method. The influence of the annealing atmosphere on both nanoparticle-based TFT devices fabricated via spin-coating and those created via inkjet printing was investigated. For the inkjet-printed TFTs, the characteristics were improved significantly at an annealing temperature of 150 degrees C. The field effect mobility, V(th), and the on/off current ratios were 3.03 cm2/Vs, -3.3 V, and 10(4), respectively. These results indicate that annealing at 150 degrees C 1 h is sufficient to obtain a mobility (μ(sat)) as high as 3.03 cm2/Vs. Also, the active layer of the solution-based ZnO nanoparticles allowed the production of high-performance TFTs for low-cost, large-area electronics and flexible devices.

  17. Theoretical study of the multiferroic properties in M-doped (M=Co, Cr, Mg) ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bahoosh, S.G. [Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle (Germany); Apostolov, A.T. [University of Architecture, Civil Engineering and Geodesy, Faculty of Hydrotechnics, Department of Physics, 1, Hristo Smirnenski Blvd., 1046 Sofia (Bulgaria); Apostolova, I.N. [University of Forestry, Faculty of Forest Industry, 10, Kl. Ohridsky Blvd., 1756 Sofia (Bulgaria); Trimper, S. [Institute of Physics, Martin-Luther-University, D-06099 Halle (Germany); Wesselinowa, Julia M. [University of Sofia, Department of Physics, Blvd. J. Bouchier 5, 1164 Sofia (Bulgaria)

    2015-01-01

    The origin of multiferroism is still an open problem in ZnO. We propose a microscopic model to clarify the occurrence of multiferroism in this material. Using Green's function technique we study the influence of ion doping and size effects on the magnetization and polarization of ZnO thin films. The calculations for magnetic Co- and Cr-ions are based on the s–d model, the transverse Ising model in terms of pseudo-spins and a biquadratic magnetoelectric coupling, whereas in case of nonmagnetic Mg-ions the model takes into account the Coulomb interaction and an indirect coupling between the pseudo-spins via the conduction electrons. We show that the magnetization M exhibits a maximum for a fixed concentration of the doping ions. Furthermore M increases with decreasing film thickness N. The polarization increases with increasing concentration of the dopant and decreasing N. The results are in good agreement with the experimental data. - Highlights: • The paper analyzes the multiferroic properties of doped ZnO thin films by a microscopic model. • The magnetization exhibits a maximum at a fixed doping concentration. • The polarization increases with growing dopant concentration. • The ferroelectric transition temperature is enhanced for increasing dopant concentration.

  18. Comparative study of quaternary Mg and Group III element co-doped ZnO thin films with transparent conductive characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Kim, In Young [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Shin, Seung Wook [Department of Materials Science and Engineering, KAIST, IBS 291 Daehak-ro Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon 305-701 (Korea, Republic of); Gang, Myeng Gil; Lee, Seung Hyoun; Gurav, K.V. [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of); Patil, P.S. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Yun, Jae Ho [Photovoltaic Research Group, Korea Institute of Energy Research, 71-2 Jang-Dong Yuseong-Gu, Daejeon 305-343 (Korea, Republic of); Lee, Jeong Yong [Department of Materials Science and Engineering, KAIST, IBS 291 Daehak-ro Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Center for Nanomaterials and Chemical Reactions, Institute for Basic Science, Daejeon 305-701 (Korea, Republic of); Kim, Jin Hyeok, E-mail: jinhyeok@chonnam.ac.kr [Department of Materials Science and Engineering, Chonnam National University, 300 Yongbong-Dong, Puk-Gu, Gwangju 500-757 (Korea, Republic of)

    2014-11-03

    Mg and Ga co-doped ZnO (Mg{sub x}Ga{sub y}Zn{sub z}O, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MGZO), Mg and Al co-doped ZnO (Mg{sub x}Al{sub y}Zn{sub z}O, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MAZO), Mg and In co-doped ZnO (Mg{sub x}In{sub y}Zn{sub z}O, x + y + z = 1, x = 0.05, y = 0.02 and z = 0.93, MIZO), Mg doped ZnO (Mg{sub x}Zn{sub y}O, x + y = 1, x = 0.05 and y = 0.95, MZO) and pure ZnO thin films have been prepared on the glass substrates by RF magnetron sputtering. Their structural, morphological, compositional, electrical, and optical properties were characterized. The X-ray diffraction patterns showed that all the thin films were grown as a hexagonal wurtzite phase with c-axis preferred orientation without secondary phase. The (0002) peak positions of MGZO, MAZO and MIZO thin films were not significantly changed. The cross-section field emission scanning electron microscopy images of MGZO, MAZO and MIZO thin films showed that all the thin films have a columnar structure with dense morphology. The MGZO thin film showed the best electrical characteristics in terms of the carrier concentration (3.7 × 10{sup 20}/cm{sup 3}), charge carrier mobility (8.39 cm{sup 2}/Vs), and a lower resistivity (1.85 × 10{sup −3} Ω cm). UV–visible spectroscopy studies showed that the MGZO, MAZO and MIZO thin films exhibit high transmittance over 85% in the visible region. The MGZO thin films showed wider optical band gap energy of 3.75 eV. - Highlights: • Mg and Group III Co-doped ZnO thin films were prepared by RF sputtering technique. • The Co-doped ZnO thin films showed better properties than those of un-doped. • The Mg and Ga Co-doped ZnO (MGZO) thin film showed the best properties. • The MGZO thin films showed the band gap of 3.75 eV and resistivity of 1.83 × 10{sup −3} Ω cm.

  19. Surfactant mediated one- and two-dimensional ZnO nanostructured thin films for dye sensitized solar cell application

    Science.gov (United States)

    Marimuthu, T.; Anandhan, N.; Thangamuthu, R.; Mummoorthi, M.; Rajendran, S.; Ravi, G.

    2015-01-01

    One-dimensional (1D) and two-dimensional (2D) nanostructured zinc oxide (ZnO) thin films were electrodeposited from aqueous zinc chloride on FTO glass substrates. The effects of organic surfactant such as cetyltrimethyl ammonium bromide (CTAB) and polyvinyl alcohol (PVA) on structural, morphological, crystal quality and optical properties of electrodeposited ZnO films were investigated. The x-ray diffraction pattern revealed that the prepared thin films were pure wutrzite hexagonal structure. The thin films deposited using organic surfactant in this work showed different morphologies such as nanoplatelet and flower. The hexagonal platelet and flower-like nanostructures were obtained in the presence of CTAB and PVA surfactant, respectively. The crystal quality and atomic vacancies of the prepared nanostructured thin films were investigated by micro Raman spectroscopic technique. The emission properties and optical quality of the films were studied by photoluminescence spectrometry. PEMA-LiClO4-EC gel polymer electrolyte has been used to replace the liquid electrolyte for reducing the leakage problem. Graphene counter electrode was used as an alternative for platinum electrode. Eosin yellow dye was used as a sensitizer. J-V characterizations were carried out for different 1D and 2D nanostructures. The nanoflower structure exhibited higher efficiency (η = 0.073%) than the other two nanostructures.

  20. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    Administrator

    X-ray diffraction (XRD) measurements showed that all ZnO films have (002) preferred orientation. Full-width at half-maximum (FWHM) of XRD from the (002) crystal plane was observed to reach to a minimum value of 0⋅139° from ZnO film, annealed at 600 °C. Photoluminescence (PL) measurements demonstrated sharp ...

  2. Thin-film ZnO as micromechanical actuator at low frequencies

    NARCIS (Netherlands)

    Blom, F.R.; Blom, F.R.; IJntema, D.J.; Ijntema, D.J.; van de Pol, F.C.M.; van de Pol, F.C.M.; Elwenspoek, Michael Curt; Fluitman, J.H.J.; Popma, T.J.A.

    A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric

  3. Few-Layer Thin-Film Metallic Glass-Enhanced Optical Properties of ZnO Nanostructures.

    Science.gov (United States)

    Huang, Bohr-Ran; Chu, Jinn P; Hsu, Cheng-Liang; Chen, You-Syuan; Chang, Chia-Hao

    2017-11-15

    A few layers of Cu-based (Cu47Zr42Al7Ti4) thin-film metallic glasses (TFMGs) were sputtered on hydrothermally synthesized ZnO nanowires/glass and ZnO nanotubes/glass to fabricate UV photodetectors. The few layers of Cu-based TFMG are ultrathin at ∼0.98 nm and have a noncrystalline metal structure according to X-ray diffraction, Raman, photoluminescence, and high-temperature transmission electron microscopy verification. The photoresponse performance of the coated few-layers Cu-TFMG samples was enhanced 1680-7700% compared with the noncoated sample. The few-layers Cu-TFMG has high transmittance ∼90% in the visible band and creates a large capacitor to absorb UV photocurrent and release dark current.

  4. Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

    KAUST Repository

    Flemban, Tahani H.

    2016-02-08

    Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence(PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency.

  5. Thin Film growth and characterization of Ti doped ZnO by RF/DC magnetron sputtering

    KAUST Repository

    Baseer Haider, M.

    2015-01-01

    Thin film Ti doped ZnO (Ti-ZnO) film were grown on sapphire (0001) substrate by RF and DC magnetron sputtering. Films were grown at a substrate temperature of 250 °C with different Ti/Zn concentration. Surface chemical study of the samples was performed by X-ray photoelectron spectroscopy to determine the stoichiometry and Ti/Zn ratio for all samples. Surface morphology of the samples were studied by atomic force microscopy. X-ray diffraction was carried out to determine the crystallinity of the film. No secondary phases of TixOy was observed. We observed a slight increase in the lattice constant with the increase in Ti concentration in ZnO. No ferromagnetic signal was observed for any of the samples. However, some samples showed super-paramagnetic phase. © 2015 Materials Research Society.

  6. Structural, Electrical, and Optical Properties of ZnO Film Used as Buffer Layer for CIGS Thin-Film Solar Cell.

    Science.gov (United States)

    Choi, Eun Chang; Cha, Ji-Hyun; Jung, Duk-Young; Hong, Byungyou

    2016-05-01

    The CuIn(x)Ga(1-x)Se2 (CIGS) using the solution-based fabrication method is attractive for thin film solar cells because of its possibilities for large-area and low-cost production. ZnO films between transparent conductive oxide (TCO) and the CdS films can improve the performances of CIGS thin-film solar cells. In this study, we investigated the characteristics of ZnO film between TCO and CIGS layers in a solar cell (AZO/ZnO/CdS/CIGS/Mo), which were deposited at various thicknesses to investigate the role of the films in CIGS solar cells. It was confirmed that the conversion efficiency of a CIGS solar cell depends on the ZnO film. For a ZnO film thickness of 80 nm, the highest power conversion efficiency that a solar cell achieved was J(sc) of 18.73 mA/cm2.

  7. ZnO thin films as propane sensors: Band structure models to explicate the dependence between the structural and morphological properties on gas sensitivity

    Science.gov (United States)

    Gómez-Pozos, Heberto; Karthik, T. V. K.; de la L. Olvera, M.; Barrientos, Abel García; Cortés, Obed Pérez; Vega-Pérez, J.; Maldonado, A.; Pérez-Hernández, R.; Rodríguez-Lugo, V.

    2017-07-01

    Pure Zinc oxide (ZnO) thin films were deposited on soda-lime glass substrates by utilizing ultrasonic spray pyrolysis technique (USP) and tested them as propane sensors. Propane sensitivity increased with decrease in the substrate temperature and water content in the feedstock solution. XRD analysis confirms that, the (002) directional ZnO which correspond to the hexagonal wurzite structure. Also, formations of rose like and spherical structures were confirmed by the SEM analysis. X-ray photoelectron spectroscopy (XPS) confirms the presence of loosely bound oxygen atoms on the surface of the low water content substrates. Two energy band structure models were proposed and explicated in detail for analyzing the effect of structural, morphological and optical properties of ZnO thin films on propane sensing properties. Highest sensitivity ( 10) was obtained for ZnO films deposited with the lowest water content, at a deposition temperature of 400 °C and operated at 200 °C.

  8. Optimization of the design of extremely thin absorber solar cells based on electrodeposited ZnO nanowires.

    Science.gov (United States)

    Lévy-Clément, Claude; Elias, Jamil

    2013-07-22

    The properties of the components of ZnO/CdSe/CuSCN extremely thin absorber (ETA) solar cells based on electrodeposited ZnO nanowires (NWs) were investigated. The goal was to study the influence of their morphology on the characteristics of the solar cells. To increase the energy conversion efficiency of the solar cell, it was generally proposed to increase the roughness factor of the ZnO NW arrays (i.e. to increase the NW length) with the purpose of decreasing the absorber thickness, improving the light scattering, and consequently the light absorption in the ZnO/CdSe NW arrays. However, this strategy increased the recombination centers, which affected the efficiency of the solar cell. We developed another strategy that acts on the optical configuration of the solar cells by increasing the diameter of the ZnO NW (from 100 to 330 nm) while maintaining a low roughness factor. We observed that the scattering of the ZnO NW arrays occurred over a large wavelength range and extended closer to the CdSe absorber bandgap, and this led to an enhancement in the effective absorption of the ZnO/CdSe NW arrays and an increase in the solar cell characteristics. We found that the thicknesses of CuSCN above the ZnO/CdSe NW tips and the CdSe coating layer were optimized at 1.5 μm and 30 nm, respectively. Optimized ZnO/CdSe/CuSCN solar cells exhibiting 3.2% solar energy conversion efficiency were obtained by using 230 nm diameter ZnO NWs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Marbled texture of sputtered Al/Si alloy thin film on Si

    Energy Technology Data Exchange (ETDEWEB)

    Gentile, M.G. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy); Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Muñoz-Tabares, J.A.; Chiodoni, A. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Sgorlon, C. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Para, I. [Department of Applied Science and Technology (DISAT), Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Torino (Italy); Carta, R.; Richieri, G. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Bejtka, K. [Istituto Italiano di Tecnologia, Center for Space Human Robotics, Corso Trento 21, 10129 Torino (Italy); Merlin, L. [Vishay Intertechnology, Diodes Division, Via Liguria 49, 10071 Borgaro Torinese, Turin (Italy); Vittone, E. [Physics Department and NIS Interdepartmental Center, University of Torino, via P. Giuria 1, 10125 Torino (Italy)

    2016-08-01

    DC magnetron sputtering is a commonly used technique for the fabrication of silicon based electronic devices, since it provides high deposition rates and uniform large area metallization. However, in addition to the thickness uniformity, coating optical uniformity is a crucial need for semiconductor industrial processes, due to the wide use of optical recognition tools. In the silicon-based technology, aluminum is one of the most used materials for the metal contact. Both the pre-deposition substrate cleaning and the sputtering conditions determine the quality and the crystalline properties of the final Al deposited film. In this paper is shown that not all the mentioned conditions lead to good quality and uniform Al films. In particular, it is shown that under certain standard process conditions, Al/Si alloy (1% Si) metallization on a [100] Si presents a non-uniform reflectivity, with a marbled texture caused by flakes with milky appearance. This optical inhomogeneity is found to be caused by the coexistence of randomly orient Al/Si crystal, with heteroepitaxial Al/Si crystals, both grown on Si substrate. Based on the microstructural analysis, some strategies to mitigate or suppress this marbled texture of the Al thin film are proposed and discussed. - Highlights: • Sputtered Al/Si layers deposited on Si present evident optical non-uniformity • It could be an issue for optical recognition tools used in semiconductor industries • Optical non-uniformity is due to randomly oriented growth of Al grains. • Substrate misorientation and process temperature can mitigate the problem.

  10. Title: using alignment and 2D network simulations to study charge transport through doped ZnO nanowire thin film electrodes

    Energy Technology Data Exchange (ETDEWEB)

    Phadke, Sujay [Dept. of Mechanical Engineering, Stanford University, 476 Lomita Mall, Stanford, CA 94305 (United States); Lee, Jung-Yong [Korea Advanced Institute of Science and Technology, Graduate School of EEWS, Daejon 305-701 (Korea, Republic of); West, Jack; Salleo, Alberto [Dept. of Materials Science and Engineering, Stanford University, 476 Lomita Mall, Stanford, CA 94305 (United States); Peumans, Peter [Dept. of Electrical Engineering, Stanford University, 330 Serra Mall, Stanford, CA 94305 (United States)

    2011-12-20

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed {proportional_to}5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Energy Technology Data Exchange (ETDEWEB)

    Hoye, Robert L. Z., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk; MacManus-Driscoll, Judith L., E-mail: rlzh2@cam.ac.uk, E-mail: jld35@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Muñoz-Rojas, David [LMGP, University Grenoble-Alpes, CNRS, F-3800 Grenoble (France); Nelson, Shelby F. [Kodak Research Laboratories, Eastman Kodak Company, Rochester, New York 14650 (United States); Illiberi, Andrea; Poodt, Paul [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Roozeboom, Fred [Holst Centre/TNO Thin Film Technology, Eindhoven, 5656 AE (Netherlands); Department of Applied Physics, Eindhoven University of Technology, P.O. Box 513, Eindhoven, 5600 MB (Netherlands)

    2015-04-01

    Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  12. Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

    Directory of Open Access Journals (Sweden)

    Robert L. Z. Hoye

    2015-04-01

    Full Text Available Atmospheric pressure spatial atomic layer deposition (AP-SALD has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.

  13. In situ x-ray diffraction of solution-derived ferroelectric thin films for quantitative phase and texture evolution measurement

    Science.gov (United States)

    Nittala, Krishna; Mhin, Sungwook; Jones, Jacob L.; Robinson, Douglas S.; Ihlefeld, Jon F.; Brennecka, Geoff L.

    2012-11-01

    An in situ measurement technique is developed and presented, which utilizes x-rays from a synchrotron source with a two-dimensional detector to measure thin film microstructural and crystallographic evolution during heating. A demonstration experiment is also shown wherein the measured diffraction patterns are used to describe phase and texture evolution during heating and crystallization of solution-derived thin films. The diffraction images are measured sequentially while heating the thin film with an infrared lamp. Data reduction methodologies and representations are also outlined to extract phase and texture information from the diffraction images as a function of time and temperature. These techniques and data reduction methods are demonstrated during crystallization of solution-derived lead zirconate titanate ferroelectric thin films heated at a rate of 30 °C/min and using an acquisition time of 8 s. During heating and crystallization, a PtxPb type phase was not observed. A pyrochlore phase was observed prior to the formation and growth of the perovskite phase. The final crystallized films are observed to have both 111 and 100 texture components. The in situ measurement methodology developed in this work allows for acquiring diffraction images in times as low as 0.25 s and can be used to investigate changes during crystallization at faster heating rates. Moreover, the experiments are shown to provide unique information during materials processing.

  14. Effects of hydrogen flow on properties of hydrogen doped ZnO thin films prepared by RF magnetron sputtering

    Science.gov (United States)

    Hu, Yuehui; Chen, Yichuan; Chen, Jun; Chen, Xinhua; Ma, Defu

    2014-03-01

    The hydrogen doped ZnO (ZnO:H) thin films were deposited on quartz glass substrates by radio frequency magnetron sputtering. The doping characteristics of ZnO:H thin films with varied hydrogen flow ratio were investigated. At low hydrogen flow ratio (H2/(H2+Ar)≤0.02), the ZnO:H thin films exhibited dominant (002) peaks from X-ray diffraction and the lattice constants became smaller. The particles were mainly a columnar structure. The particles' size became smaller, and the island-like structure appeared on the thin films surface. In addition, the low resistivity properties of ZnO:H thin films was ascribed to the increase of the carriers concentration and carriers mobility; When the hydrogen flow ratio was more than 0.02 ( M≥0.02), two absorption bands at 1400-1800 cm-1 and 3200-3900 cm-1 were observed from the FT-IR spectra, which indicated that the ZnO:H thin films had typical Zn-H bonding, O-H bonding (hydroxyl), and Zn-H-O bonding (like-hydroxyl). The scanning electron microscope (SEM) results show that a large number of hydroxyl agglomeration formed an island-like structure on the thin films surface. The absorption peak at about 575 cm-1 in the Raman spectra indicated that oxygen vacancies (VO) defects were produced in the process of high hydrogen doping. In this condition, the low resistivity properties of ZnO:H thin films were mainly due to the increasing electron concentration resulted from VO. Meanwhile, the Raman absorption peaks at approximately 98 cm-1 and 436 cm-1 became weaker, and the (002) XRD diffraction peak quenched and the lattice constants increased, which shows that the ZnO:H thin films no longer presented a typical ZnO hexagonal wurtzite structure. With the increasing of hydrogen flow ratio, the optical transmittance of ZnO:H thin films in the ultraviolet band show a clear Burstein-Moss shift effect, which further explained that electron concentration was increased due to the increasing VO with high hydrogen doping concentration. Moreover

  15. Thickness dependence of structural, electrical and optical behaviour of undoped ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouderbala, M.; Hamzaoui, S. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria); Amrani, B. [Department of Physics, Centre Universitaire de Mascara, Mascara 29000 (Algeria)], E-mail: abouhalouane@yahoo.fr; Reshak, Ali H. [Institute of Physical Biology-South Bohemia University, Institute of System Biology and Ecology-Academy of Sciences, Nove Hrady 37333 (Czech Republic); Adnane, M.; Sahraoui, T.; Zerdali, M. [Laboratoire de Microscopie Electronique et des Sciences des Materiaux, Departement de Physique, USTO, B.P. 1505, El-Mnaouer, 31000 Oran (Algeria)

    2008-09-01

    Undoped ZnO thin films of different thicknesses were prepared by r.f. sputtering in order to study the thickness effect upon their structural, morphological, electrical and optical properties. The results suggest that the film thickness seems to have no clear effect upon the orientation of the grains growth. Indeed, the analysis with X-ray diffraction show that the grains were always oriented according to the c(0 0 2)-axis perpendicular to substrate surface whatever the thickness is. However, the grain size was influenced enough by this parameter. An increase in the grain size versus the thickness was noted. For the electrical properties, measurements revealed behaviour very dependent upon thickness. The resistivity decreased from 25 to 1.5x10{sup -3} {omega} cm and the mobility increased from 2 to 37 cm{sup 2} V{sup -1} s{sup -1} when the thickness increased from 70 to 1800 nm while the carrier concentration seems to be less affected by the film thickness and varied slightly remaining around 10{sup 20} cm{sup -3}. Nevertheless, a tendency to a decrease was noticed. This behaviour in electrical properties was explained by the crystallinity and the grain size evolution. The optical measurements showed that all the samples have a strong transmission higher than 80% in the visible range. A slight shift of the absorption edge towards the large wavelengths was observed as the thickness increased. This result shows that the band gap is slightly decreases from 3.37 to 3.32 eV with the film thickness vary from 0.32 to 0.88 {mu}m.

  16. Residual stress measurement in textured thin film by grazing-incidence X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ma, C.-H.; Huang, J.-H.; Chen, Haydn

    2002-10-15

    Measurements of residual stresses in textured thin films have always been problematic. In this article, a new experimental method using grazing-incidence X-ray diffraction is presented with its principles based upon the conventional sin{sup 2}{psi} method. Instead of using the Bragg-Brentano (B-B) or Seemann-Bohlin geometry, the proposed method utilizes an asymmetrical diffraction geometry for which the X-ray beam is incident at a grazing angle {gamma} to the sample surface, while the angle {psi} is the tilt angle of the sample surface as defined by the conventional sin{sup 2}{psi} method. Basic equations involved in the X-ray residual stress analysis are described, along with exemplified experimental data. Analysis shows that, for an isotropic medium, strain measured using this grazing-incidence geometry assumes a linear relationship with the geometrical parameter cos{sup 2}{alpha} sin{sup 2}{psi}, where the angle {alpha} is a constant and is defined as the Bragg angle at {psi}=0 deg., {theta}{sub o}, minus the grazing incidence angle {gamma}, i.e. {alpha}={theta}{sub o}-{gamma}. The grazing-incidence diffraction geometry effectively increases the irradiation volume from a thin-film specimen, thereby giving rise to higher intensity for high-angle Bragg peaks than the conventional B-B geometry. The proposed analysis has another advantage, in that the inhomogeneous sample casts little effect on the residual stress results when compared to the traditional sin{sup 2}{psi} method.

  17. Sn-doped ZnO nanocrystalline thin films with enhanced linear and nonlinear optical properties for optoelectronic applications

    Science.gov (United States)

    Ganesh, V.; Yahia, I. S.; AlFaify, S.; Shkir, Mohd.

    2017-01-01

    In the current work, nanocrystalline undoped and Sn doped ZnO thin films with different doping concentrations (1, 3, 5, 7 at%) have been deposited on glass substrate by low cost spin coating technique. The strong effect of Sn doping on structural, morphological, optical, nonlinear properties have been observed. X-ray diffraction study revealed that all the thin films are preferentially grown along (002) plane. The crystallite size is found to be increased with increasing the concentration of Sn, similar behavior was observed by atomic force microscopy analysis. Optical study shows that the prepared thin films are highly transparent. The direct optical band gap was calculate and found to be 3.16, 3.20, 3.22, 3.34, 3.18 eV for pure and doped films respectively. The refractive index, linear susceptibility, nonlinear absorption coefficient, nonlinear susceptibility and nonlinear refractive index were calculated. Furthermore, the third order nonlinear optical properties are investigated using Z-scan technique and their values are found to be -3.75×10-8 cm2/W, -3.76×10-3 cm/W and 0.65×10-3 esu for 7% Sn doped ZnO, respectively. There is a good correlation between theoretical and experimental third order nonlinear properties and higher values shows that the deposited films are may be applied in nonlinear optical applications.

  18. Highly reflective Er-doped ZnO thin-film coating for application in a UV optical ring resonator

    Science.gov (United States)

    Agarwal, Lucky; Naresh Naik, B.; Tripathi, Shweta

    2017-11-01

    We achieved doping-induced optical variation in Erbium-doped ZnO (EZO) that may prove to be a promising material for use in optical ring resonators. EZO thin-film samples were deposited on n-type Si substrate via the sol–gel spin-coating technique followed by annealing in air at 500 °C. The doping-induced morphological variations of the deposited thin film were characterized using x-ray diffraction, ellipsometry, scanning electron microscopy and energy dispersive x-ray spectroscopy. Further, in order to establish the suitability of EZO for optical applications, detailed optical analysis was performed that exhibited that 1 mol% Er-doped ZnO may prove to be suitable material. Finally, a ring resonator design has been proposed using 1 mol% EZO thin film. The proposed structure was simulated using the MODE tool by Lumerical solutions. The Eigenmode Solver has been used to simulate and calculate the effective refractive index, group velocity, propagation constant β, dispersion and bending losses for a wavelength region of 200 nm to 900 nm. Simplified expressions for the free spectral range, full-width at half-maximum and quality factor have been derived and validated by the simulated data for the proposed ring resonator.

  19. Electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Pagni, O. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Somhlahlo, N.N. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Weichsel, C. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)]. E-mail: andrew.leitch@nmmu.ac.za

    2006-04-01

    We report on the electrical characterization of ZnO films grown by MOCVD on glass and sapphire substrates. After correcting our temperature variable Hall measurements by applying the standard two-layer model, which takes into account an interfacial layer, scattering mechanisms in the ZnO films were studied as well as donor activation energies determined. ZnO films grown at different oxygen partial pressures indicated the importance of growth conditions on the defect structure by means of their conductivities and conductivity activation energies.

  20. Nanostructured thin film formation on femtosecond laser-textured Ti-35Nb-xZr alloy for biomedical applications

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Yong-Hoon [Department of Dental Materials and Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Choe, Han-Cheol, E-mail: hcchoe@chosun.ac.kr [Department of Dental Materials and Research Center of Nano-Interface Activation for Biomaterials, School of Dentistry, Chosun University, Gwangju (Korea, Republic of); Brantley, William A. [Division of Restorative and Prosthetic Dentistry and Primary Care, College of Dentistry, Ohio State University, Columbus, OH (United States)

    2011-05-31

    The aim of this study was to investigate the nanostructured thin film formation on femtosecond (FS) laser-textured Ti-35Nb-xZr alloy for biomedical applications. The initial surface roughening treatment involved irradiation with the FS laser in ambient air. After FS laser texturing, nanotubes were formed on the alloy surface using a potentiostat and a 1 M H{sub 3}PO{sub 4} solution containing 0.8 wt.% NaF with an applied cell voltage of 10 V for 2 h. The surface phenomena were investigated by FE-SEM, EDS, XRD, XPS and a cell proliferation test. It was found that nanostructured Ti-35Nb-xZr alloys after FS laser texturing had a hybrid surface topography with micro and nano scale structures, which should provide very effective osseointegration.

  1. Synthesis of ZnO thin film by sol-gel spin coating technique for H2S gas sensing application

    Science.gov (United States)

    Nimbalkar, Amol R.; Patil, Maruti G.

    2017-12-01

    In this present work, zinc oxide (ZnO) thin film synthesized by a simple sol-gel spin coating technique. The structural, morphology, compositional, microstructural, optical, electrical and gas sensing properties of the film were studied by using XRD, FESEM, EDS, XPS, HRTEM, Raman, FTIR and UV-vis techniques. The ZnO thin film shows hexagonal wurtzite structure with a porous structured morphology. Gas sensing performance of synthesized ZnO thin film was tested initially for H2S gas at different operating temperatures as well as concentrations. The maximum gas response is achieved towards H2S gas at 300 °C operating temperature, at 100 ppm gas concentration as compared to other gases like CH3OH, Cl2, NH3, LPG, CH3COCH3, and C2H5OH with a good stability.

  2. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    DEFF Research Database (Denmark)

    Bodea, M. A.; Sbarcea, G.; Naik, G. V.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass...... from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to a negative real part of the permittivity at approximately 1500 nm. In comparison to noble metals, doped...

  3. Negative permittivity of ZnO thin films prepared from aluminum and gallium doped ceramics via pulsed-laser deposition

    OpenAIRE

    M.A. Bodea; G. Sbarcea; Naik, Gururaj V.; Boltasseva, Alexandra; Klar, T. A.; Pedarnig, J.D.

    2013-01-01

    Aluminum and gallium doped zinc oxide thin films with negative dielectric permittivity in the near infrared spectral range are grown by pulsed laser deposition. Composite ceramics comprising ZnO and secondary phase Al2O3 or Ga2O3 are employed as targets for laser ablation. Films deposited on glass from dense and small-grained ceramic targets show optical transmission larger than 70 % in the visible and reveal an onset of metallic reflectivity in the near infrared at 1100 nm and a crossover to...

  4. Hydrogenated ZnO thin film with p-type surface conductivity from plasma treatment

    Science.gov (United States)

    Gurylev, V.; Useinov, A.; Hsieh, P. Y.; Su, C. Y.; Perng, T. P.

    2017-06-01

    Fabrication of a ZnO p-n homojunction within a single structure by a simple process is a challenging task. In this work, an intrinsic p-type surface conductive layer of ZnO with a controlled concentration of holes over n-type conductive bulk was obtained by a one-step room-temperature process via hydrogen plasma treatment. Non-contact surface sensitive techniques, such as Kelvin probe force microscopy and conductive force atomic microscopy, confirmed the existence of surface p-type conductivity through analyzing the distribution and concentration of charge carriers on the topmost surface of hydrogenated ZnO. A theoretical framework was constructed to provide a rationale of the p-type surface conductivity and justify its relation to the treatment time. It is believed that this finding will open a new possibility for the fabrication of ZnO based p-n junction devices.

  5. Simulation, fabrication and characterization of ZnO based thin film transistors grown by radio frequency magnetron sputtering.

    Science.gov (United States)

    Singh, Shaivalini; Chakrabarti, P

    2012-03-01

    We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 x 10(-7) A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.

  6. Electrical and optical properties of Na +-doped ZnO thin films prepared by sol-gel method

    Science.gov (United States)

    Li, Ying-wei; Lin, Chun-fang; Zhou, Xiao; Ma, Ji; Zhu, Xing-wen

    2008-02-01

    Na +-doped ZnO thin films (Zn 1-xNa xO, x=0-0.20) were prepared on Si substrate by sol-gel method using zinc acetate and sodium carbonate as starting materials. The electrical properties, including the conducting type and the carrier concentration, as well as the optical properties of the so-obtained films were investigated by four-point probe van der Pauw method and photoluminescence (PL) spectroscopy. After doping Na +, the conductive type of ZnO films changed to p from n-type, indicating that Na + can act as an acceptor to occupy the Zn 2+ sites in ZnO lattice. The resistivity, Hall mobility, and the hole concentration of the film with x=0.10 were 75.7 Ω•cm, 2.1 cm2/V s and 2.955×10 16/cm 3, respectively. The PL results showed that there were a narrow near-band-edge (NBE) emission line and a broad deep-level (DL) emission for all the films with and without Na + dopants. A slight blue-shift from about 383nm to 380nm of NBE line was observed for the films after doping Na +.

  7. Atomic-layer-deposition-assisted ZnO nanoparticles for oxide charge-trap memory thin-film transistors

    Science.gov (United States)

    Seo, Gi Ho; Yun, Da Jeong; Lee, Won Ho; Yoon, Sung Min

    2017-02-01

    ZnO nanoparticles (NPs) with monolayer structures were prepared by atomic layer deposition (ALD) to use for a charge-trap layer (CTL) for nonvolatile memory thin-film transistors (MTFTs). The optimum ALD temperature of the NP formation was demonstrated to be 160 °C. The size and areal density of the ZnO NPs was estimated to be approximately 33 nm and 4.8 × 109 cm-2, respectively, when the number of ALD cycles was controlled to be 20. The fabricated MTFTs using a ZnO-NP CTL exhibited typical memory window properties, which are generated by charge-trap/de-trap processes, in their transfer characteristics and the width of the memory window (MW) increased from 0.6 to 18.0 V when the number of ALD cycles increased from 5 to 30. The program characteristics of the MTFT were markedly enhanced by the post-annealing process performed at 180 °C in an oxygen ambient due to the improvements in the interface and bulk qualities of the ZnO NPs. The program/erase (P/E) speed was estimated to be 10 ms at P/E voltages of -14 and 17 V. The memory margin showed no degradation with the lapse in retention time for 2 × 104 s and after the repetitive P/E operations of 7 × 103 cycles.

  8. The Effect of Tin Addition to ZnO Nanosheet Thin Films for Ethanol and Isopropyl Alcohol Sensor Applications

    Directory of Open Access Journals (Sweden)

    Brian Yuliarto

    2015-01-01

    Full Text Available The requirements of green environmental and public health monitoring have become stricter along with greater world attention for global warming. The most common pollutants in the environment that need tightened control are volatile organic compounds (VOC. Compared to other kinds of sensors, semiconductor sensors have certain advantages, including high sensitivity, fast response, simplicity, high reliability and low cost. In this work, ZnO and Sn-doped ZnO nanostructure materials with high surface nanosheet areas were synthesized using chemical bath deposition. The X-ray diffraction patterns could be indexed according to crystallinity mainly to a hexagonal wurzite ZnO structure. The scanning electron microscopy (SEM results showed that in all samples, the thin films after the addition of Sn consisted of many kinds of microstructure patterns on a nanoscale, with various sheet shapes. The sensor performance characterizations showed that VOC levels as low as 3 vol% of isopropyl alcohol (IPA and ethanol could be detected at sensitivities of 83.86% and 85.57%, respectively. The highest sensitivity of all sensors was found at an Sn doping of 1.4 at%. This high sensor sensitivity is a result of the high surface area and Sn doping, which in turn produced a higher absorption of the targeted gas.

  9. Inducing electrocatalytic functionality in ZnO thin film by N doping to realize a third generation uric acid biosensor.

    Science.gov (United States)

    Jindal, Kajal; Tomar, Monika; Gupta, Vinay

    2014-05-15

    A third generation uric acid biosensor has been developed by exploiting the electrocatalytic functionality of nitrogen (N) doped zinc oxide (ZnO:N) thin film matrix deposited using pulsed laser deposition technique. The electrochemistry of ZnO:N thin film based electrode is investigated by using electrochemical impedance spectroscopy and cyclic voltammetry. The obtained results demonstrate that nitrogen doping in ZnO matrix offers a striking electrocatalytic activity to the immobilized uricase towards the oxidation of analyte (uric acid) and promotes the direct transfer of electrons from active sites of enzyme onto the electrode without any mediator. In contrast to pure ZnO, ZnO:N (8% N) thin film based uric acid biosensor gives a high sensitivity of about 1.38 mA/mM in the absence of mediator. Moreover, ZnO:N derived bio-electrode exhibits excellent selectivity and outstanding analytical stability and reproducibility, which enables a reliable and sensitive determination of uric acid in the serum. The ZnO:N thin film based biosensor exhibits a linear sensing response in the range from 0 to 1.0mM of uric acid concentration and the apparent Michaelis-Menten kinetic parameter (Km) is estimated to be about 0.13 mM which indicates the high affinity of the prepared bio-electrode towards uric acid. The obtained results are encouraging and indicate that the ZnO:N thin film matrix offers a new and promising platform for the development of novel third generation biosensors without using any mediator. © 2013 Published by Elsevier B.V.

  10. The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Hanearl [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Doyoung [School of Electrical and Electronic Engineering, Ulsan College, 57 Daehak-ro, Nam-gu, Ulsan 680-749 (Korea, Republic of); Kim, Hyungjun, E-mail: hyungjun@yonsei.ac.kr [School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)

    2014-04-01

    Highlights: • Undoped and Ga doped ZnO thin films were deposited using DEZ and TMGa. • Effects of Ga doping using TMGa in Ga doped ZnO were investigated. • Degraded properties from excessive doping were analyzed using chemical bondings. - Abstract: The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O{sub 2} gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O{sub 2} ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O{sub 2} from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10{sup −3} Ω cm for undoped ZnO to 2.05 × 10{sup −3} Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

  11. Nanocrystalline ZnO thin film deposition on flexible substrate by low-temperature sputtering process for plastic displays.

    Science.gov (United States)

    Banerjee, Arghya Narayan; Joo, Sang Woo; Min, Bong-Ki

    2014-10-01

    A low temperature sputter deposition process is adopted to fabricate nanocrystalline ZnO thin films on plastic (polyethylene terepthalate) substrate. Very good crystalline films are synthesized at a substrate temperature around 120 degrees C. Structural and microstructural analyses confirm the proper phase formation of the nanomaterial with an average nanoparticle size around 5-10 nm. Optical transmission analysis of the film deposited on plastic substrate depicts nearly 90% visible transmittance with a direct bandgap around 3.56 eV. This cost-effective, low-temperature fabrication of nanocrystalline thin film with very good structural and optical properties will find important applications in plastic display technology. Also the process is a vacuum-based clean process, which is compatible to CMOS-IC fabrication techniques and therefore, can easily be integrated with modern solid state device fabrication processes for diverse device applications.

  12. Influence of Mg content on tailoring optical bandgap of Mg-doped ZnO thin film prepared by sol-gel method

    Directory of Open Access Journals (Sweden)

    M.N.H. Mia

    Full Text Available Tailoring optical bandgap of ZnO nanostructured thin films doped with different elements facilitates potential material for photonic applications. Different methods of fabrication process result in different optical and structural properties for the same amount of Mg content. Therefore, details investigation of structural and optical parameters, and their correlation need to be revealed to utilize the fabricated thin films. In this work, Mg-doped ZnO thin film of 200 nm thickness was fabricated by sol-gel spin coating method on a glass substrate for four different Mg content levels. Multiple layers were deposited by a spin coater to increase the film thickness. The prepared thin films were characterized by SEM, XRD, EDS, and UV–Vis spectroscopy. The spectroscopic analysis showed a uniform crystalline nanostructured surface with less structural defects, enhanced transmittance, and higher optical bandgap than that of pure ZnO nanostructured thin film. Change of Mg content from 2% to 8% facilitated tuning of bandgap in the range of 3.30–3.39 eV. Changing trend of structural and optical parameters with Mg content showed non-linear, non-monotonic relation. In-depth analysis of structural and optical properties provides crucial information to form a better view about bandgap dependency on structural parameters. Keywords: Mg-doped ZnO, MgZnO, Bandgap tuning, Sol-gel, Spin coating

  13. Chemical and electronic interface structure of spray pyrolysis deposited undoped and Al-doped ZnO thin films on a commercial Cz-Si solar cell substrate

    Energy Technology Data Exchange (ETDEWEB)

    Gabas, M.; Ramos-Barrado, J.R. [Dpto. de Fisica Aplicada I, Lab. de Materiales y Superficies, Universidad de Malaga 29071 Malaga (Spain); Barrett, N.T. [CEA DSM/IRAMIS/SPCSI, CEA Saclay, 91191 Gif sur Yvette (France); Gota, S. [Laboratoire Leon Brillouin, UMR 012 CEA-CNRS CEA Saclay, 91191 Gif sur Yvette (France); Rojas, T.C. [Instituto de Ciencia de Materiales de Sevilla, CSIC, Americo Vespucio 49, 41092 Sevilla (Spain); Lopez-Escalante, M.C. [Isofoton S.A., Parque Tecnologico de Andalucia, Severo Ochoa, 50, 29590 Malaga (Spain)

    2009-08-15

    We have studied differences in the interface between undoped and Al-doped ZnO thin films deposited on commercial Si solar cell substrates. The undoped ZnO film is significantly thicker than the Al-doped film for the same deposition time. An extended silicate-like interface is present in both samples. Transmission electron microscopy (TEM) and photoelectron spectroscopy (PES) probe the presence of a zinc silicate and several Si oxides in both cases. Although Al doping improves the conductivity of ZnO, we present evidence for Al segregation at the interface during deposition on the Si substrate and suggest the presence of considerable fixed charge near the oxidized Si interface layer. The induced distortion in the valence band, compared to that of undoped ZnO, could be responsible for considerable reduction in the solar cell performance. (author)

  14. Area-Selective ZnO Thin Film Deposition on Variable Microgap Electrodes and Their Impact on UV Sensing

    Directory of Open Access Journals (Sweden)

    Q. Humayun

    2013-01-01

    Full Text Available ZnO thin films were deposited on patterned gold electrodes using the sol-gel spin coating technique. Conventional photolithography process was used to obtain the variable microgaps of 30 and 43 μm in butterfly topology by using zero-gap chrome mask. The structural, morphological, and electrical properties of the deposited thin films were characterized by X-ray diffraction (XRD, scanning electron microscope (SEM, and Keithley SourceMeter, respectively. The current-voltage (I-V characterization was performed to investigate the effect of UV light on the fabricated devices. The ZnO fabricated sensors showed a photo to dark current (Iph/Id ratios of 6.26 for 30 μm and 5.28 for 43 μm gap electrodes spacing, respectively. Dynamic responses of both fabricated sensors were observed till 1V with good reproducibility. At the applied voltage of 1 V, the response time was observed to be 4.817 s and 3.704 s while the recovery time was observed to be 0.3738 s and 0.2891 s for 30 and 43 μm gaps, respectively. The signal detection at low operating voltages suggested that the fabricated sensors could be used for miniaturized devices with low power consumption.

  15. Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

    Directory of Open Access Journals (Sweden)

    N. Poornima

    2013-01-01

    Full Text Available This work projects photoluminescence (PL as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE at 380 nm and the deep level emission (DLE at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/ can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

  16. Antibacterial and barrier properties of oriented polymer films with ZnO thin films applied with atomic layer deposition at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Pitkänen, Marja; Salo, Erkki; Kenttä, Eija [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Tanskanen, Anne, E-mail: Anne.Tanskanen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Sajavaara, Timo, E-mail: timo.sajavaara@jyu.fi [University of Jyväskylä, Department of Physics, P.O. Box 35, FI-40014 Jyväskylä (Finland); Putkonen, Matti; Sievänen, Jenni; Sneck, Asko; Rättö, Marjaana [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland); Karppinen, Maarit, E-mail: Maarit.Karppinen@aalto.fi [Aalto University, School of Chemical Technology, Department of Chemistry, Laboratory of Inorganic Chemistry, P.O. Box 16100, FI-00076 Aalto (Finland); Harlin, Ali [VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044, VTT (Finland)

    2014-07-01

    Concerns on food safety, and need for high quality and extended shelf-life of packaged foods have promoted the development of antibacterial barrier packaging materials. Few articles have been available dealing with the barrier or antimicrobial properties of zinc oxide thin films deposited at low temperature with atomic layer deposition (ALD) onto commercial polymer films typically used for packaging purposes. The purpose of this paper was to study the properties of ZnO thin films compared to those of aluminum oxide. It was also possible to deposit ZnO thin films onto oriented polylactic acid and polypropylene films at relatively low temperatures using ozone instead of water as an oxidizing precursor for diethylzinc. Replacing water with ozone changed both the structure and the chemical composition of films deposited on silicon wafers. ZnO films deposited with ozone contained large grains covered and separated probably by a more amorphous and uniform layer. These thin films were also assumed to contain zinc salts of carboxylic acids. The barrier properties of a 25 nm ZnO thin film deposited with ozone at 100 °C were quite close to those obtained earlier with ALD Al{sub 2}O{sub 3} of similar apparent thickness on similar polymer films. ZnO thin films deposited at low temperature indicated migration of antibacterial agent, while direct contact between ZnO and Al{sub 2}O{sub 3} thin films and bacteria promoted antibacterial activity. - Highlights: • Thin films were grown from diethylzinc also with ozone instead of water at 70 and 100 °C. • ZnO films deposited with diethylzinc and ozone had different structures and chemistries. • Best barrier properties obtained with zinc oxide films close to those obtained with Al{sub 2}O{sub 3} • Ozone as oxygen source provided better barrier properties at 100 °C than water. • Both aluminum and zinc oxide thin films showed antimicrobial activity against E. coli.

  17. Photoanodes with Fully Controllable Texture: The Enhanced Water Splitting Efficiency of Thin Hematite Films Exhibiting Solely (110) Crystal Orientation.

    Science.gov (United States)

    Kment, Stepan; Schmuki, Patrik; Hubicka, Zdenek; Machala, Libor; Kirchgeorg, Robin; Liu, Ning; Wang, Lei; Lee, Kiyoung; Olejnicek, Jiri; Cada, Martin; Gregora, Ivan; Zboril, Radek

    2015-07-28

    Hematite, α-Fe2O3, is considered as one of the most promising materials for sustainable hydrogen production via photoelectrochemical water splitting with a theoretical solar-to-hydrogen efficiency of 17%. However, the poor electrical conductivity of hematite is a substantial limitation reducing its efficiency in real experimental conditions. Despite of computing models suggesting that the electrical conductivity is extremely anisotropic, revealing up to 4 orders of magnitude higher electron transport with conduction along the (110) hematite crystal plane, synthetic approaches allowing the sole growth in that direction have not been reported yet. Here, we present a strategy for controlling the crystal orientation of very thin hematite films by adjusting energy of ion flux during advanced pulsed reactive magnetron sputtering technique. The texture and effect of the deposition mode on the film properties were monitored by XRD, conversion electron Mössbauer spectroscopy, XPS, SEM, AFM, PEC water splitting, IPCE, transient photocurrent measurements, and Mott-Schottky analysis. The precise control of the synthetic conditions allowed to fabricate hematite photoanodes exhibiting fully textured structures along (110) and (104) crystal planes with huge differences in photocurrents of 0.65 and 0.02 mA cm(-2) (both at 1.55 V versus RHE), respectively. The photocurrent registered for fully textured (110) film is among record values reported for thin planar films. Moreover, the developed fine-tuning of crystal orientation having a huge impact on the photoefficiency would induce further improvement of thin hematite films mainly if cation doping will be combined with the controllable texture.

  18. Cotton Fabric Surface Modification by Sol-Gel Deposition of ZnO Thin Films

    Science.gov (United States)

    Vihodceva, S.; Kukle, S.

    2012-08-01

    One of the main tasks of research is to impact the additional value on natural textiles by adding to them ultraviolet (UV) absorption and antimicrobial protection properties with ZnO nano-level coatings. ZnO shows high absorption in the UV region of the light spectrum, in comparison with organic absorbers conventionally used in the textile industry shows no significant degradation, is stable and classified as non-toxic material. Nanosols were prepared by using the sol-gel process. In this work comparison of samples coated by nanosols with zinc acetate (Zn (CH3COO)2-2H2O) and zinc sulphate (ZnSO4) was made. Scanning electron microscopy (SEM) was used to examine the nature of the surface modification with ZnO coating by the sol-gel technique as also after exploitation of samples; energy dispersive X-ray spectroscopy was used for the analysis of elemental composition of coated fabric samples.

  19. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  20. Nanoporous characteristics of sol—gel-derived ZnO thin film

    Science.gov (United States)

    Ansari, Anees A.; Khan, M. A. M.; Alhoshan, M.; Alrokayan, S. A.; Alsalhi, M. S.

    2012-04-01

    Sol—gel-derived nanoporous ZnO film has been successfully deposited on glass substrate at 200 °C and subsequently annealed at different temperatures of 300, 400 and 600 °C. Atomic force micrographs demonstrated that the film was crack-free, and that granular nanoparticles were homogenously distributed on the film surface. The average grain size of the nanoparticles and RMS roughness of the scanned surface area was 10 nm and 13.6 nm, respectively, which is due to the high porosity of the film. Photoluminescence (PL) spectra of the nanoporous ZnO film at room temperature show a diffused band, which might be due to an increased amount of oxygen vacancies on the lattice surface. The observed results of the nanoporous ZnO film indicates a promising application in the development of electrochemical biosensors due to the porosity of film enhancing the higher loading of biomacromolecules (enzyme and proteins).

  1. Growth and Characterisation of Pulsed-Laser Deposited Tin Thin Films on Cube-Textured Copper at Different Temperatures

    Directory of Open Access Journals (Sweden)

    Szwachta G.

    2016-06-01

    Full Text Available High-quality titanium nitride thin films have been grown on a cube-textured copper surface via pulsed laser deposition. The growth of TiN thin films has been very sensitive to pre-treatment procedure and substrate temperature. It is difficult to grow heteroexpitaxial TiN films directly on copper tape due to large differences in lattice constants, thermal expansion coefficients of the two materials as well as polycrystalline structure of substrate. The X-Ray diffraction measurement revealed presence of high peaks belonged to TiN(200 and TiN(111 thin films, depending on used etcher of copper surface. The electron diffraction patterns of TiN(200/Cu films confirmed the single-crystal nature of the films with cube-on-cube epitaxy. The high-resolution microscopy on our films revealed sharp interfaces between copper and titanium nitride with no presence of interfacial reaction.

  2. Nanoprofiles evaluation of ZnO thin films by an evanescent light method.

    Science.gov (United States)

    Mirchin, Nina; Peled, Aaron; Duta, Liviu; Popescu, Andrei C; Dorcioman, Gabriela; Mihailescu, Ion N

    2013-10-01

    The extraction efficiency of evanescent light from ZnO nanolayers and their thickness profiles in the range of (1-105) nm was evaluated by a new microscopy technique, differential evanescent light intensity imaging method. It is based on capturing the evanescent light scattered by the layer of the material deposited on glass substrates. The analyzed ZnO films were obtained by pulsed laser deposition at 27°C and 100°C, using a nanosecond UV laser source. Copyright © 2013 Wiley Periodicals, Inc.

  3. Microstructural characterization, optical and photocatalytic properties of bilayered CuO and ZnO based thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Solís-Canto, O.; Ornelas-Gutiérrez, C.; Pérez-García, S.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2014-12-05

    Highlights: • High quality bilayered Zn–Cu oxide thin films were deposited by aerosol assisted CVD. • Detailed microstructural characterization was performed by XRD and electron microscopy. • Absorbance of bilayered films shows a shift of absorption edge toward visible region. • Optical band gap or nearly 3.2 and 2 eV was determined for ZnO and Cu oxide. • High photocatalytic activity around 90% was obtained for bilayered samples. - Abstract: In this work, it is presented the synthesis, microstructural characterization and photocatalytic properties of bilayered CuO–ZnO/ZnO thin films onto borosilicate glass and fused silica substrates. The films were deposited by aerosol assisted chemical vapor deposition, using an experimental setup reported elsewhere. Deposition conditions were optimized to get high quality films; i.e. they were structurally uniform, highly transparent, non-light scattering, homogeneous, and well adhered to the substrate. Different Cu/Zn atomic ratios were tried for the upper layer. The microstructure of the films was characterized by grazing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM) and X-ray photoelectron spectroscopy. GIXRD results indicate the presence of ZnO Wurzite and Cu oxide phases. Results of SEM and HRTEM analysis of the cross sectional microstructure showed that the films were composed of compact and dense layers with no visible evidence of an interfacial boundary or porosity. Optical absorbance of the bilayered films showed a clear shift of the absorption toward the visible range. Optical band gap was determined roughly at 3.2 and 2 eV for ZnO and Cu oxide, respectively. Photocatalytic activity of the samples, for the degradation of a 10{sup −5} mol dm{sup −3} solution of methylene blue (MB), was determined after 120 and 240 min of irradiation with an UV-A source. Around 90% of MB degradation was reached by bilayered films with

  4. Effect of annealing atmospheres on secondary recrystallization in thin-gauge grain-oriented silicon steel: Microstructures and textures

    Science.gov (United States)

    He, Cheng-xu; Yang, Fu-yao; Meng, Li; Ma, Guang; Chen, Xin; Hou, Peng-fei; Zhang, Wen-kang

    2017-10-01

    By controlling the onset temperature of secondary recrystallization and the temperature interval for grain growth, the annealing atmosphere is the key factor affecting the grain size and texture of grain-oriented silicon steel. The thin-gauge cold-rolled grain-oriented silicon steel (TG-CRGO) is not only more sensitive to annealing atmosphere than the thick-gauge grain-oriented silicon steel, but also requires a different annealing atmosphere. In this paper, the evolution of microstructures and textures in 0.18 mm TG-CRGO steel during high-temperature annealing in five different annealing atmospheres are detected through EBSD technique. The results show that excellent magnetic properties (B8=1.93 T) can be obtained when annealing atmosphere as 75%N2+25%H2 (volume ratio). Secondary recrystallization occurs in all the specimens that were prepared in five different annealing atmospheres, which causes significant differences in secondary recrystallized microstructures and textures. As N2 content rises, the average secondary recrystallized grain sizes increased and reaches a maximum average grain size in 75%N2 atmosphere and then decreases along with N2 content over 75%. When N2 content is 75%, Goss grains show preferential abnormal growth at 1050-1055 °C, which is a very narrow temperature range for secondary recrystallization. In conclusion, proper annealing atmosphere is one of the important measures to control and enable the grain-oriented silicon steel to get the sharp Goss texture.

  5. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  6. Highly transparent and conductive Al-doped ZnO nanoparticulate thin films using direct write processing.

    Science.gov (United States)

    Vunnam, S; Ankireddy, K; Kellar, J; Cross, W

    2014-05-16

    Solution processable Al-doped ZnO (AZO) thin films are attractive candidates for low cost transparent electrodes. We demonstrate here an optimized nanoparticulate ink for the fabrication of AZO thin films using scalable, low-cost direct write processing (ultrasonic spray deposition) in air at atmospheric pressure. The thin films were made via thermal processing of as-deposited films. AZO films deposited using the proposed nanoparticulate ink with further reducing in vacuum and rf plasma of forming gas exhibited optical transparency greater than 95% across the visible spectrum, and electrical resistivity of 0.5 Ω cm and it drops down to 7.0 × 10(-2) Ω cm after illuminating with UV light, which is comparable to commercially available tin doped indium oxide colloidal coatings. Various structural analyses were performed to investigate the influence of ink chemistry, deposition parameters, and annealing temperatures on the structural, optical, and electrical characteristics of the spray deposited AZO thin films. Optical micrographs confirmed the presence of surface defects and cracks using the AZO NPs ink without any additives. After adding N-(2-Aminoethyl)-3-aminopropylmethyldimethoxy silane to the ink, AZO films exhibited an optical transparency which was virtually identical to that of the plain glass substrate.

  7. Influence of zinc concentration on band gap and sub-band gap absorption on ZnO nanocrystalline thin films sol-gel grown

    Directory of Open Access Journals (Sweden)

    Munirah

    2017-02-01

    Full Text Available ZnO thin films were fabricated on quartz substrates at different zinc acetate molar concentrations using sol-gel spin coating method. The samples were characterized using X-ray diffraction, field emission scanning electron microscope, UV-Vis spectroscopy, FT-IR spectroscopy and photoluminescence spectroscopy. Sub-band gap absorption of ZnO thin films in the forbidden energy region was carried out using highly sensitive photothermal deflection spectroscopy (PDS. The absorption coefficients of ZnO thin films increased in the range of 1.5 eV to 3.0 eV, upon increasing zinc concentration. The optical band gaps were evaluated using Tauc’s plots and found to be in the range of 3.31 eV to 3.18 eV. They showed the red shift in the band edge on increase in zinc concentration. The PL spectra of ZnO thin films revealed the characteristic band edge emission centered at the 396 nm along with green emission centered at the 521 nm.

  8. Texture evolution of transition-metal nitride thin films by ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ma, C.-H.; Huang, J.-H.; Chen, Haydn

    2004-01-15

    TiN, VN and CrN were systematically deposited on silicon substrates using ion beam assisted deposition (IBAD) technique at temperatures and ion (N{sub 2}{sup +}) energy ranging from 300 deg. C to 500 deg. C and 100 eV to 650 eV, respectively. The results showed that the texture could be controlled by the ion beam energy, flux, and its incident angle, in conjunction with the deposition temperature. For the 0 deg. angle of ion incidence, fiber textures were formed and could be controlled between (111) and (200) surface plane orientation by adjusting ion flux or ion energy. Three types of in-plane textures were produced, when the ion beam was incident at 45 deg. angle, for which cases ion channeling played an important role in the formation of in-plane texture. Using the strain-energy perturbation method, the stability of texture can be further understood. Among the three in-plane textures, the (200) in-plane texture is strain-energy stable, and the others are not.

  9. Properties of Nb-doped ZnO transparent conductive thin films ...

    Indian Academy of Sciences (India)

    Administrator

    , M H JIANG* and X Y LIU ... However, high cost and scarce resources of In limit its usage in these devices. This has led researchers to ... has been attempted by many groups, resulting in high-quality, highly conductive n-type ZnO films (Cao.

  10. Heavy lithium-doped ZnO thin films prepared by spray pyrolysis ...

    Indian Academy of Sciences (India)

    Administrator

    industry, optoelectronic application (Soki et al 2000;. Look et al 2004), as well as application in heterostructures for fabrication of photodiodes (Jeong et al .... the large clusters were formed on the surface which has taken place by nucleation and coalescence of the grains at high Li content. It is assured that Li doping in ZnO.

  11. Influence of annealing temperature on ZnO thin films grown by dual ...

    Indian Academy of Sciences (India)

    In electrical characterization as well, when annealing temperature was increased from 400 to 600 °C, room temperature electron mobility enhanced from 6.534 to 13.326 cm2/V s, and then reduced with subsequent increase in temperature. Therefore, 600 °C annealing temperature produced good-quality ZnO film, suitable ...

  12. Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

    2014-01-01

    Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

  13. Femtosecond laser texturing of glass substrates for improved light in-coupling in thin-film photovoltaics

    Science.gov (United States)

    Imgrunt, J.; Chakanga, K.; von Maydell, K.; Teubner, U.

    2017-12-01

    Due to their low thickness, thin-film solar cells usually suffer from poor light absorption. To improve this situation, light-management is necessary. Within the present work, in order to enhance light coupling, an ultra-short-pulse laser is used for texturing substrates. Here commercially available multi component soda lime glass substrates are patterned with a dot grid at ambient air pressure with 150 fs pulses, centered at a wavelength of 775 nm. The structures consist of small depressions with approximately 3 μ m diameter. Varying depths of around 300 nm could be well reproduced. Reducing the pitch (distance between structure-to-structure centers), from ten to approximately one times the crater diameter, influences the structure quality and increases the deformation of the surface in the vicinity of the depressions. Consequently, the diffuse light scattering is improved from 0 to 30% haze. Overall, the presented approach is quite simple. This single-step texturing technique which can be easily used on different substrates is applicable in a wide range of thin-film solar cells. It has the advantage that ultra-thin electrodes can be used as the front contact as well as the potential to be integrated into a PV production line. Thus, complicated layer stacks for absorption enhancement can be avoided.

  14. Fabrication and electrical properties of low temperature-processed thin-film-transistors with chemical-bath deposited ZnO layer.

    Science.gov (United States)

    Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun

    2013-06-01

    ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.

  15. A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

    Energy Technology Data Exchange (ETDEWEB)

    Turgut, G. [Department of Basic Sciences, Faculty of Science, Erzurum Technical University, Erzurum, 25240 (Turkey); Duman, S., E-mail: sduman@atauni.edu.tr [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey); Sonmez, E. [Department of Physics, Faculty of K.K. Education, Ataturk University, Erzurum, 25240 (Turkey); Ozcelik, F.S. [Department of Physics, Faculty of Science, Ataturk University, Erzurum, 25240 (Turkey)

    2016-04-15

    Highlights: • Eu incorporated ZnO thin films were grown by sol–gel spin coating. • The influence of Eu contribution on features of ZnO was investigated. • Al/ZnO:Eu/p-Si heterojunction diodes were also fabricated. • The diode parameters were calculated from I–V measurements. - Abstract: In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 × 10{sup −3} and 2.43 nm to the values of 35.56 nm, 1.98 × 10{sup −3} and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3.328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I–V) measurements at the room temperature.

  16. X-ray diffraction from thin films : Residual stress and texture analysis

    Energy Technology Data Exchange (ETDEWEB)

    Leoni, M.; Scardi [Trento Univ. (Italy). Dept. of Materials Engineering

    1996-09-01

    In this short contribution the attention will be drawn to the use of XRD-based non-destructive techniques for the study of the stress state and the orientation (texture) of various technologically valuable films. The cases in which the texture is important will be presented and they are: applicative examples, spacing in a wide variety of application areas and regarding growth-induced and machining-induced orientation.

  17. Smooth anti-reflective three-dimensional textures for liquid phase crystallized silicon thin-film solar cells on glass.

    Science.gov (United States)

    Eisenhauer, David; Köppel, Grit; Jäger, Klaus; Chen, Duote; Shargaieva, Oleksandra; Sonntag, Paul; Amkreutz, Daniel; Rech, Bernd; Becker, Christiane

    2017-06-01

    Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced to overcome this trade-off. By smoothing nanoimprinted SiO x nano-pillar arrays with spin-coated TiO x layers, light in-coupling into laser-crystallized silicon solar cells is significantly improved as successfully demonstrated in three-dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach V oc values above 630 mV. Furthermore, the short-circuit current density could be increased from 21.0 mA cm-2 for planar reference cells to 24.5 mA cm-2 on SMART textures, a relative increase of 18%. External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state-of-the-art solar cell with 11.9% efficiency, corresponding to a j sc, EQE gain of 2.8 mA cm-2.

  18. Development of Room Temperature Excitonic Lasing From ZnO and MgZnO Thin Film Based Metal-Semiconductor-Metal Devices

    Science.gov (United States)

    Suja, Mohammad Zahir Uddin

    Room temperature excitonic lasing is demonstrated and developed by utilizing metal-semiconductor-metal devices based on ZnO and MgZnO materials. At first, Cu-doped p-type ZnO films are grown on c-sapphire substrates by plasma-assisted molecular beam epitaxy. Photoluminescence (PL) experiments reveal a shallow acceptor state at 0.15 eV above the valence band edge. Hall effect results indicate that a growth condition window is found for the formation of p-type ZnO thin films and the best conductivity is achieved with a high hole concentration of 1.54x1018 cm-3, a low resistivity of 0.6 O cm and a moderate mobility of 6.65 cm2 V -1 s-1 at room temperature. Metal oxide semiconductor (MOS) capacitor devices have been fabricated on the Cu-doped ZnO films and the characteristics of capacitance-voltage measurements demonstrate that the Cu-doped ZnO thin films under proper growth conditions are p-type. Seebeck measurements on these Cu-doped ZnO samples lead to positive Seebeck coefficients and further confirm the p-type conductivity. Other measurements such as XRD, XPS, Raman and absorption are also performed to elucidate the structural and optical characteristics of the Cu-doped p-type ZnO films. The p-type conductivity is explained to originate from Cu substitution of Zn with a valency of +1 state. However, all p-type samples are converted to n-type over time, which is mostly due to the carrier compensation from extrinsic defects of ZnO. To overcome the stability issue of p-type ZnO film, alternate devices other than p-n junction has been developed. Electrically driven plasmon-exciton coupled random lasing is demonstrated by incorporating Ag nanoparticles on Cu-doped ZnO metal-semiconductor-metal (MSM) devices. Both photoluminescence and electroluminescence studies show that emission efficiencies have been enhanced significantly due to coupling between ZnO excitons and Ag surface plasmons. With the incorporation of Ag nanoparticles on ZnO MSM structures, internal quantum

  19. Effect of deposition conditions on the growth rate and electrical properties of ZnO thin films grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Roro, K.T.; Botha, J.R.; Leitch, A.W.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2008-07-01

    ZnO thin films have been grown on glass substrates by MOCVD. The effect of deposition conditions such as VI/II molar ratio, DEZn flow rate and total reactor pressure on the growth rate and electrical properties of the films was studied. It is found that the growth rate decreases with an increase in the VI/II molar ratio. This behaviour is ascribed to the competitive adsorption of reactant species on the growth surface. The growth rate increases with an increase in DEZn flow rate, as expected. It is shown that the carrier concentration is independent of the DEZn flow rate. An increase in the total reactor pressure yields a decrease in growth rate. This phenomenon is attributed to the depletion of the gas phase due to parasitic prereactions between zinc and oxygen species at high pressure. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. ZnO thin film characterization by X-ray reflectivity optimization using genetic algorithm and Fourier transformation

    Energy Technology Data Exchange (ETDEWEB)

    Solookinejad, Ghahraman, E-mail: ghsolooki@gmail.com [Department of Physics, University of Isfahan, Hezar Jarib Street, Isfahan 81746-73441 (Iran, Islamic Republic of); Rozatian, Amir Sayid Hassan [Department of Physics, University of Isfahan, Hezar Jarib Street, Isfahan 81746-73441 (Iran, Islamic Republic of); Habibi, Mohammad Hossein [Department of Chemistry, University of Isfahan, Hezar Jarib Street, Isfahan 81746-73441 (Iran, Islamic Republic of)

    2011-10-15

    Zinc oxide (ZnO) thin film was fabricated by sol-gel spin coating method on glass substrate. X-ray reflectivity (XRR) and its optimization have been used for characterization and extracting physical parameters of the film. Genetic algorithm (GA) has been applied for this optimization process. The model independent information was needed to establish data analyzing process for X-ray reflectivity before optimization process. Independent information was exploited from Fourier transform of Fresnel reflectivity normalized X-ray reflectivity. This Fourier transformation (Auto Correlation Function) yields thickness of each coated layer on substrate. This information is a keynote for constructing optimization process. Specular X-ray reflectivity optimization yields structural parameters such as thickness, roughness of surface and interface and electron density profile of the film. Acceptable agreement exists between results obtained from Fourier transformation and X-ray reflectivity fitting.

  1. Environmental stability of solution processed Al-doped ZnO naoparticulate thin films using surface modification technique

    Energy Technology Data Exchange (ETDEWEB)

    Vunnam, Swathi, E-mail: swathivunnam@gmail.com [Program of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Ankireddy, Krishnamraju; Kellar, Jon [Program of Materials Engineering and Science, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Cross, William, E-mail: William.Cross@sdsmt.edu [Program of Materials Engineering and Science, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States)

    2014-12-15

    Graphical abstract: - Highlights: • AZO nanoparticulate films were deposited using ultrasonic spray deposition. • Functionalization of solution processed AZO thin films was carried out. • Contact angles and QNM AFM results confirmed the existence of molecular layers. • Environmental stability of AZO films greatly increased with surface modification. - Abstract: The environmental stability of solution processed Al-doped ZnO (AZO) thin films was enhanced by functionalizing the film surface with a thin self-assembled molecular layer. Functionalization of AZO films was performed using two types of molecules having identical 12-carbon alkyl chain termination but different functional groups: dodecanethiol (DDT) and dodecanoic acid (DDA). Surface modified AZO films were examined using electrical resistivity measurements, contact angle measurements and quantitative nanomechanical property mapping atomic force microscopy. The hydrophobic layer inhibits the penetration of oxygen and water into the AZO's grain boundaries thus significantly increasing the environmental stability over unmodified AZO. Surface modified AZO films using DDT exhibited lower electrical resistivity compared to DDA functionalized AZO films. Our study demonstrates a new approach for improving the physical properties of oxide based nanoparticulate films for device applications.

  2. Photocatalytic Activity and Stability of Porous Polycrystalline ZnO Thin-Films Grown via a Two-Step Thermal Oxidation Process

    Directory of Open Access Journals (Sweden)

    James C. Moore

    2014-08-01

    Full Text Available The photocatalytic activity and stability of thin, polycrystalline ZnO films was studied. The oxidative degradation of organic compounds at the ZnO surface results from the ultraviolet (UV photo-induced creation of highly oxidizing holes and reducing electrons, which combine with surface water to form hydroxyl radicals and reactive oxygen species. Therefore, the efficiency of the electron-hole pair formation is of critical importance for self-cleaning and antimicrobial applications with these metal-oxide catalyst systems. In this study, ZnO thin films were fabricated on sapphire substrates via direct current sputter deposition of Zn-metal films followed by thermal oxidation at several annealing temperatures (300–1200 °C. Due to the ease with which they can be recovered, stabilized films are preferable to nanoparticles or colloidal suspensions for some applications. Characterization of the resulting ZnO thin films through atomic force microscopy and photoluminescence indicated that decreasing annealing temperature leads to smaller crystal grain size and increased UV excitonic emission. The photocatalytic activities were characterized by UV-visible absorption measurements of Rhodamine B dye concentrations. The films oxidized at lower annealing temperatures exhibited higher photocatalytic activity, which is attributed to the increased optical quality. Photocatalytic activity was also found to depend on film thickness, with lower activity observed for thinner films. Decreasing activity with use was found to be the result of decreasing film thickness due to surface etching.

  3. Effect of O2/Ar Gas Flow Ratios on Properties of Cathodic Vacuum Arc Deposited ZnO Thin Films on Polyethylene Terephthalate Substrate

    Directory of Open Access Journals (Sweden)

    Chien-Wei Huang

    2016-01-01

    Full Text Available Cathodic vacuum arc deposition (CVAD can obtain a good quality thin film with a low growth temperature and a high deposition rate, thus matching the requirement of film deposition on flexible electronics. This paper reported the room-temperature deposition of zinc oxide (ZnO thin films deposited by CVAD on polyethylene terephthalate (PET substrate. Microstructure, optical, and electrical measurements of the deposited ZnO thin films were investigated with various O2/Ar gas flow ratios from 6 : 1 to 10 : 1. The films showed hexagonal wurtzite crystal structure. With increasing the O2/Ar gas flow ratios, the c-axis (002 oriented intensity decreased. The crystal sizes were around 16.03 nm to 23.42 nm. The average transmittance values in the visible range of all deposited ZnO films were higher than 83% and the calculated band gaps from the absorption data were found to be around 3.1 to 3.2 eV. The resistivity had a minimum value in the 3.65 × 10−3 Ω·cm under the O2/Ar gas flow ratio of 8 : 1. The luminescence mechanisms of the deposited film were also investigated to understand the defect types of room-temperature grown ZnO films.

  4. Low-temperature growth and physical investigations of undoped and (In, Co) doped ZnO thin films sprayed on PEI flexible substrate

    Science.gov (United States)

    Ben Ameur, S.; Barhoumi, A.; Mimouni, R.; Amlouk, M.; Guermazi, H.

    2015-08-01

    ZnO thin films were deposited on polymer substrate Polyethyerimide (PEI) at 250 °C by spray pyrolysis technique. The effects of different doping elements (Co and In) on physical properties of ZnO thin films were investigated. Thin film characterizations were carried out using X-ray diffraction technique, UV-Vis-NIR spectroscopy, Photoluminescence (PL) spectroscopy and the contact angle measurement method. XRD measurement showed a successful growth of crystalline films on polymer substrate at low temperature by the spray pyrolysis process. XRD patterns revealed that all films consist of single ZnO phase and were well crystallized with preferential orientation towards (1 0 1) direction. Doping by cobalt has effective role in the enhancement of the crystalline quality, increases in the band gap according to Burstein Moss effect. Doping with indium leads rather to the decrease of both crystallinity and optical band gap energy value. Photoluminescence of the films showed UV emission (NBE) and visible emission related to defects. The contact angles were measured to study the effect of various doping elements on the hydrophobicity of the film depending on surface roughness. Results showed strong dependence on the doping element. In fact, doping with cobalt element increases the roughness of ZnO films and reinforces the surface from hydrophilic to hydrophobic (θ > 90°).

  5. Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Kajal Jindal

    2015-02-01

    Full Text Available Transition from room temperature diamagnetic to ferromagnetic state in N doped ZnO (ZnO:N films grown by pulsed laser deposition with tunable energy density has been identified. ZnO:N films deposited with moderate laser energy density of 2.5 J/cm2 are single phase and nearly defect free having N dopant substitution at O sites in ZnO lattice, exhibiting intrinsic ferromagnetism. When energy density reduces (<2.5 J/cm2, defects in ZnO:N film degrades ferromagnetism and exhibit diamagnetic phase when grown at energy density of 1.0 J/cm2. Growth kinetics, which in turn depends on laser energy density is playing important role in making transition from ferromagnetic to diamagnetic in ZnO:N films.

  6. The electrical, elemental, optical, and surface properties of Si-doped ZnO thin films prepared by thermionic vacuum arc

    Science.gov (United States)

    Mohammadigharehbagh, Reza; Özen, Soner; Yudar, Hafizittin Hakan; Pat, Suat; Korkmaz, Şadan

    2017-09-01

    The purpose of this work is to study the properties of Si-doped ZnO (SZO) thin films, which were prepared using the non-reactive thermionic vacuum arc technique. The analysis of the elemental, optical, and surface properties of ZnO:Si thin films was carried out using energy dispersive x-ray spectroscopy, UV-VIS spectrophotometry, atomic force microscopy, and scanning electron microscopy, respectively. The current-voltage measurement was employed in order to study the electrical properties of the films. The effect of Si doping on the physical properties of ZnO films was investigated. The film thicknesses were measured as 55 and 35 nm for glass and PET substrates, respectively. It was clearly observed from the x-ray diffraction results that the Si and ZnO peaks were present in the coated SZO films for all samples. The morphological studies showed that the deposited surfaces are homogenous, dense, and have a uniform surface, with the existence of some cracks only on the glass substrate. The elemental composition has confirmed the existence of Zn, Si, and O elements within the prepared films. Using a UV-VIS spectrophotometer, the optical parameters such as transmittance, absorbance, refractive index, and reflectance were calculated. It should be noted that the transparency and refractive indices obtained from the measurements decrease with increasing Si concentration. The obtained optical bandgap values using transmittance spectra were determined to be 3.74 and 3.84 eV for the glass and PET substrates, respectively. An increase in the bandgap results demonstrates that the Si doping concentration is comparable to the pure ZnO thin films. The current versus voltage curves revealed the ohmic nature of the films. Subsequently, the development and fabrication of excellent transparent conducting electrodes enabled the appropriate use of Si-doped ZnO thin films.

  7. Quantum anomalous Hall effect and a nontrivial spin-texture in ultra-thin films of magnetic topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Duong, Le Quy; Das, Tanmoy; Feng, Y. P.; Lin, Hsin, E-mail: nilnish@gmail.com [Graphene Research Centre and Department of Physics, National University of Singapore, Singapore 117546 (Singapore)

    2015-05-07

    We study the evolution of quantum anomalous Hall (QAH) effect for a Z{sub 2} topological insulator (TI) thin films in a proximity induced magnetic phase by a realistic layered k·p model with interlayer coupling. We examine three different magnetic configurations in which ferromagnetic (FM) layer(s) is added either from one side (FM-TI), from both sides (FM-TI-FM), or homogeneously distributed (magnetically doped) in a TI slab. We map out the thickness-dependent topological phase diagram under various experimental conditions. The critical magnetic exchange energy for the emergence of QAH effect in the latter two cases decreases monotonically with increasing number of quintuple layers (QLs), while it becomes surprisingly independent of the film thickness in the former case. The gap size of the emergent QAH insulator depends on the non-magnetic “parent” gap of the TI thin film and is tuned by the FM exchange energy, opening a versatile possibility to achieve room-temperature QAH insulator in various topological nanomaterials. Finally, we find that the emergent spin-texture in the QAH effect is very unconventional, non-“hedgehog” type; and it exhibits a chiral out-of-plane spin-flip texture within the same valence band which is reminiscent of dynamical “skyrmion” pattern, except our results are in the momentum space.

  8. Investigation of structural and optical properties in Cobalt–Chromium co-doped ZnO thin films within the Lattice Compatibility Theory scope

    Energy Technology Data Exchange (ETDEWEB)

    Mimouni, R.; Boubaker, K., E-mail: mmbb11112000@yahoo.fr; Amlouk, M.

    2015-03-05

    Highlights: • Co/Cr co-doped ZnO thin films were synthesized by a low-cost spray technique. • Optical and morphological properties of the Co/Cr co-doped ZnO system were described. • Lattice Compatibility Theory explains Co preferential incorporation in ZnO lattice. - Abstract: (Co,Cr)-codoped zinc oxide thin films (ZnO:Cr:Co) at different percentages (0%, 1–1%, 1–2%, 2–1%) were deposited on glass substrates using a chemical low-cost spray technique. The effect of Cr and Co concentration on the structural, morphological and optical properties of the ZnO:Cr:Co thin films were investigated by means of X-ray diffraction, optical measurement, contact Atomic Force Microscopy (AFM), and Photoluminescence spectroscopy. The results revealed that all films consist of single phase ZnO and were well crystallized in würtzite phase with the crystallites preferentially oriented towards (0 0 2) direction parallel to c-axis. Also, the co-doping has effective role in the enhancement of the crystallinity and leads to an improvement of roughness of the ZnO films. Doping by chrome and cobalt resulted in a slight decrease in the optical band gap energy of the films. The optical band gap of these films is calculated. The optical absorption spectra show that the absorption mechanism is a direct transition. The UV peak positions for ZnO:Cr:Co samples slightly red shift to the longer wavelength in comparison with the pure ZnO which can be attributed to the change in the acceptor level induced by the substitutional Co{sup 2+} and Cr{sup 3+} and the band-gap narrowing of ZnO with the Cr and Co dopants. The Lattice Compatibility Theory analyses have been applied in order to give original, plausible and founded explanation to the recorded preferential incorporation of cobalt ions within ZnO lattice over chromium.

  9. Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Luong, Chi Hieu [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Kim, Sarah [Central Research Division, LG Chem., Yuseong-gu, Daejeon 305-738 (Korea, Republic of); Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon-Gil [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of); Jeong, Jun-Ho [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Choi, Jun-Hyuk, E-mail: junhyuk@kimm.re.kr [Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials, Yuseong-gu, Daejeon 305-343 (Korea, Republic of); Jeong, Jong-Ryul, E-mail: jrjeong@cnu.ac.kr [Department of Materials Science and Engineering and Graduate School of Energy Science and Technology, Chungnam National University, Yuseong-gu, Daejeon 305-764 (Korea, Republic of)

    2015-10-01

    Highlights: • Investigated the effect of the interfacial ZnO for ETL synthesized by photochemical reaction using photosensitive 2-nitrobenzaldehyde on the inverted P3HT:PCBM OSC. • The abrupt increase of grain size and surface roughness was observed as increasing the annealing temperature above 350 °C. • The sheet resistance abruptly decreased with increasing the annealing temperature above 350 °C. • Increase of surface roughness caused by the high annealing temperature could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current. - Abstract: We have investigated ZnO thin films prepared via photochemical reaction as the electron transport layer (ETL) of inverted organic solar cells (OSCs). Morphological and electrical properties of the ZnO thin films prepared by the photosensitive ZnO sol were studied according to the annealing temperature and their effects on the performance of the inverted poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM) OSCs was characterized. It was found that the optimal annealing temperature of the ZnO thin films was 330 °C, and that devices with the ZnO ETL annealed at this temperature exhibited the largest short-circuit current density (J{sub sc}) of 9.39 mA/cm{sup 2}, as well as the highest power conversion efficiency (PCE) of 2.31%, which can be attributed to enhanced electron transport and interfacial properties. Devices containing ZnO films formed at optimal annealing condition exhibited an open circuit voltage (V{sub oc}) of 0.60 V and a fill factor (FF) of 41.0%. However, further increase of the annealing temperature led to degradation of the device performance, despite further improvements in electrical properties. We have found that marked increase in the surface roughness of the ZnO films occurred at temperatures above 350 °C which could be detrimental to the OSCs characteristics due to a high contact resistance and a large leakage current.

  10. The role of Al, Ba, and Cd dopant elements in tailoring the properties of c-axis oriented ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ali, Dilawar [Department of Physics GC University, Lahore 54000 (Pakistan); Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Butt, M.Z., E-mail: mzakriabutt@gmail.com [Center for Advanced Studies in Physics, GC University Lahore, Lahore 54000 (Pakistan); Arif, Bilal [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Al-Ghamdi, Ahmed A. [Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia); Yakuphanoglu, Fahrettin [Department of Physics, Faculty of Arts and Sciences, Firat University, 23169 Elazig (Turkey); Department of Physics, Faculty of Sciences, King Abdul Aziz University, Jeddah (Saudi Arabia)

    2017-02-01

    Highly c-axis oriented un-doped ZnO and Al-, Ba-, and Cd-doped ZnO thin films were successfully deposited on glass substrate employing sol-gel spin coating method. XRD analysis showed that all thin films possess hexagonal wurtzite structure with preferred orientation along c-axis. Field emission scanning electron microscope (FESEM) was used to study the morphology of thin films. The morphology consists of spherical and non-spherical shape grains. EDX analysis confirms the presence of O, Zn, Al, Ba, and Cd in the relevant thin films. The optical properties of thin films were studied using UV–Vis spectrometer. All thin films possess more than 85% optical transmittance in the visible region. Blue shift in optical band gap E{sub g} has been observed on doping with Al, whereas doping with Ba and Cd resulted in red shift of E{sub g}. Urbach energy E{sub u} of all doped ZnO thin films was found to have excellent correlation with their band gap energy E{sub g}. Moreover, E{sub g} increases while E{sub u} decreases on the increase in crystallite size D. Optical parameters E{sub g} and E{sub u} as well as structural parameters lattice strain and stacking fault probability also show excellent correlation with the B-factor or the mean-square amplitude of atomic vibrations of the dopant elements. Electrical conductivity measurement of the thin films was carried out using two-point probe method. The electrical conductivity was found to increase with the increase in crystallite orientation along c-axis.

  11. UV and visible photoluminescence emission intensity of undoped and In-doped ZnO thin film and photoresponsivity of ZnO:In/Si hetero-junction

    Energy Technology Data Exchange (ETDEWEB)

    Zebbar, N., E-mail: nacbar2003@yahoo.fr [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Chabane, L. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Gabouze, N. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Kechouane, M. [LCMS, Faculty of Physics, University of Sciences and Technology (USTHB), BP 32, El-Alia, Algiers (Algeria); Trari, M. [Laboratory of Storage and Valorization of Renewable Energies, Faculty of Chemistry (USTHB), BP 32, El-Alia, Algiers (Algeria); Aida, M.S. [LCM et Interface, Faculty of Sciences, University of Constantine, 25000 (Algeria); Belhousse, S. [CRTSE, 02 Bd. Frantz Fanon, BP 140, Algiers (Algeria); Hadj Larbi, F. [MEMS & Sensors, Division Microélectronique et Nanotechnologie, Centre de Développement des Technologies Avancées (CDTA), BP 17, Baba Hassen, Algiers (Algeria)

    2016-04-30

    Undoped zinc oxide (ZnO) and indium-doped (ZnO:In) thin films were grown at different temperatures (250–400 °C) on alkali-free borosilicate glass and n-Si (100) substrates by Ultrasonic Spray Pyrolysis method. The structural, compositional, optical and electrical properties of ZnO films were investigated by X-ray diffraction, Scanning Electron Microscopy, Rutherford Back Scattering Spectroscopy, Fourier Transform Infrared spectroscopy, photoluminescence (PL) and the four-point probe technique. The predominance of ultraviolet (UV) and blue emission intensities was found to be closely dependent on the resistivity of the film. The visible emission band (peaking at 432 nm) prevails for low film resistivity, ranging from 10{sup −2} to 1 Ω·cm. By contrast, for higher resistivity (> 1 Ω·cm), there is a predominance of the UV band (382 nm). The PL and photoresponsivity results of fabricated ZnO:In/n-Si(100) heterojunctions prepared at different temperatures are discussed. The maximum spectral response of the ZnO:8%In/Si heterojunction diode fabricated at 250 °C was about 80 mA/W at zero bias. The highlighted results are attractive for the optoelectronic applications. - Highlights: • Properties of ZnO thin films grown by Ultrasonic Spray Pyrolysis at 350 °C. • Photoluminescence emission intensity in undoped ZnO film: effect of the resistivity • Photoluminescence emission intensity of In-doped ZnO film is resistivity dependent. • The spectral response of ZnO:In/Si hetero-junction deposited in the range (250–400 °C)

  12. Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Fang-Hsing, E-mail: fansen@dragon.nchu.edu.tw; Chang, Chiao-Lu

    2016-05-01

    Highlights: • Al and F co-doped ZnO (AFZO) thin films were prepared by rf magnetron sputtering. • Effects of substrate temperature on properties of AFZO films were investigated. • The AFZO films show a typical hexagonal wurtzite structure and are (0 0 2) oriented. • The AFZO thin film prepared at 200 °C exhibits a low resistivity of 2.88 × 10{sup −4} Ω-cm. • The average visible transmittances of all the AFZO thin films exceed 92%. - Abstract: ZnO is a wide bandgap semiconductor that has many potential applications such as solar cells, thin film transistors, light emitting diodes, and gas/biological sensors. In this study, a composite ceramic ZnO target containing 1 wt% Al{sub 2}O{sub 3} and 1.5 wt% ZnF{sub 2} was prepared and used to deposit transparent conducting Al and F co-doped zinc oxide (AFZO) thin films on glass substrates by radio frequency magnetron sputtering. The effect of substrate temperatures ranging from room temperature (RT) to 200 °C on structural, morphological, electrical, chemical, and optical properties of the deposited thin films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM), Hall effect measurement, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and UV–vis spectrophotometer. The XRD results showed that all the AFZO thin films had a (0 0 2) diffraction peak, indicating a typical wurtzite structure with a preferential orientation of the c-axis perpendicular to the substrate. The FE-SEM and AFM analyses indicated that the crystallinity and grain size of the films were enhanced while the surface roughness decreased as the substrate temperature increased. Results of Hall effect measurement showed that Al and F co-doping decreased the resistivity more effectively than single-doping (either Al or F doping) in ZnO thin films. The resistivity of the AFZO thin films decreased from 5.48 × 10{sup −4} to 2.88 × 10{sup −4}

  13. Structural, optical, and electrical properties of ZnO thin films deposited by sol-gel dip-coating process at low temperature

    Science.gov (United States)

    Kim, Soaram; Nam, Giwoong; Yoon, Hyunsik; Park, Hyunggil; Choi, Hyonkwang; Kim, Jong Su; Kim, Jin Soo; Kim, Do Yeob; Kim, Sung-O.; Leem, Jae-Young

    2014-07-01

    Sol-gel dip-coating was used to prepare ZnO thin films with relaxed residual stress by lowering the deposition temperature from room temperature (25°C) to -25°C. The effect of deposition temperature on the structural, optical, and electrical properties of the films was characterized using scanning electron microscopy (SEM), Raman spectroscopy, photoluminescence (PL), ultraviolet-visible (UV-Vis) spectroscopy and reflectance accessory, and the van der Pauw method. All the thin films were deposited successfully onto quartz substrates and exhibited fibrous root morphology. At low temperature, the deposition rate was higher than at room temperature (RT) because of enhanced viscosity of the films. Further, lowering the deposition temperature affected the structural, optical, and electrical properties of the ZnO thin films. The surface morphology, residual stress, PL properties, and optical transmittance and reflectance of the films were measured, and this information was used to determine the absorption coefficient, optical band gap, Urbach energy, refractive index, refractive index at infinite wavelength, extinction coefficient, single-oscillator energy, dispersion energy, average oscillator wavelength, moments M -1 and M -3, dielectric constant, optical conductivity, and electrical resistivity of the ZnO thin films.

  14. Observation of low resistivity and high mobility in Ga doped ZnO thin films grown by buffer assisted pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Ajimsha, R.S., E-mail: ajimsha@gmail.com [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Das, Amit K.; Misra, P.; Joshi, M.P.; Kukreja, L.M. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India); Kumar, R.; Sharma, T.K.; Oak, S.M. [Semiconductor Physics & Devices Lab., Raja Ramanna Centre for Advanced Technology, Indore 452 013 (India)

    2015-07-25

    Highlights: • Ga doped ZnO thin films were grown using buffer assisted pulsed laser deposition. • Lowest resistivity ∼5.1 × 10{sup −5} Ω cm with a mobility of ∼41.9 cm{sup 2}/V s was observed. • Buffer assisted growth methodology maintains relatively good crystalline quality. • This plays a key role in decreasing the resistivity of to the aforementioned value. • This resistivity value, to the best of our knowledge is the lowest so far in ZnO. - Abstract: We have grown Ga doped ZnO (GZO) thin films at moderate temperatures with Ga concentrations in the range varying from 0.25 to 3 at.% on sapphire substrates using buffer assisted pulsed laser deposition. Room temperature resistivity measured was ∼5.1 × 10{sup −5} Ω cm with a electron mobility of ∼41.9 cm{sup 2}/V s for an optimum Ga concentration of ∼0.75 at.% in the GZO films. Buffer assisted growth methodology maintains relatively good crystalline quality of the GZO thin films, thereby improving the electron mobility even at high dopant concentrations. This plays a key role in decreasing the resistivity of GZO films to the aforementioned value, which to the best of our knowledge is the lowest so far. These highly conducting GZO thin films with good mobility are potential candidates for transparent conducting oxide (TCO) applications in various optoelectronic devices.

  15. Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application.

    Science.gov (United States)

    Chao, Chung-Hua; Wei, Da-Hua

    2015-10-03

    In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 (o)C. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 (o)C. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 (o)C by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application.

  16. Facile formation of ZIF-8 thin films on ZnO nanorods

    NARCIS (Netherlands)

    Al-Kutubi, H.; Dikhtiarenko, A.; Zafarani, H.R.; Sudhölter, E.J.R.; Gascon, J.; Rassaei, L.

    2015-01-01

    In this work, thin films of the well-known metal–organic framework ZIF-8 were formed on zinc oxide nanorods through the reaction with 2-methyl-imidazole solution (Hmim). Deposition of a thin film of the linker solution allows the underlying zinc oxide nanorod morphology to be preserved, resulting in

  17. Facile formation of ZIF-8 thin films on ZnO nanorods

    NARCIS (Netherlands)

    Al-Kutubi, H.; Dikhtiarenko, A.; Zafarani, H.R.; Sudhölter, E.J.R.; Gascon, J.; Rassaei, L.

    In this work, thin films of the well-known metal–organic framework ZIF-8 were formed on zinc oxide nanorods through the reaction with 2-methyl-imidazole solution (Hmim). Deposition of a thin film of the linker solution allows the underlying zinc oxide nanorod morphology to be preserved, resulting in

  18. Improved Resistance Switching Stability in Fe-Doped ZnO Thin Films Through Pulsed Magnetic Field Annealing.

    Science.gov (United States)

    Xu, Hongtao; Wu, Changjin; Xiahou, Zhao; Jung, Ranju; Li, Ying; Liu, Chunli

    2017-12-01

    Five percent of Fe-doped ZnO (ZnO:Fe) thin films were deposited on Pt/TiO2/SiO2/Si substrates by a spin-coating method. The films were annealed without (ZnO:Fe-0T) and with a pulsed magnetic field of 4 T (ZnO:Fe-4TP) to investigate the magnetic annealing effect on the resistance switching (RS) behavior of the Pt/ZnO:Fe/Pt structures. Compared with the ZnO:Fe-0T film, the ZnO:Fe-4TP film showed improved RS performance regarding the stability of the set voltage and the resistance of the high resistance state. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the ZnO:Fe-4TP film contains more uniform grains and a higher density of oxygen vacancies, which promote the easier formation of conducting filaments along similar paths and the stability of switching parameters. These results suggest that external magnetic fields can be used to prepare magnetic oxide thin films with improved resistance switching performance for memory device applications.

  19. Effect of substrates and thickness on optical properties in atomic layer deposition grown ZnO thin films

    Science.gov (United States)

    Pal, Dipayan; Singhal, Jaya; Mathur, Aakash; Singh, Ajaib; Dutta, Surjendu; Zollner, Stefan; Chattopadhyay, Sudeshna

    2017-11-01

    Atomic Layer Deposition technique was used to grow high quality, very low roughness, crystalline, Zinc Oxide (ZnO) thin films on silicon (Si) and fused quartz (SiO2) substrates to study the optical properties. Spectroscopic ellipsometry results of ZnO/Si system, staggered type-II quantum well, demonstrate that there is a significant drop in the magnitudes of both the real and imaginary parts of complex dielectric constants and in near-band gap absorption along with a blue shift of the absorption edge with decreasing film thickness at and below ∼20 nm. Conversely, UV-vis absorption spectroscopy of ZnO/SiO2, thin type-I quantum well, consisting of a narrower-band gap semiconductor grown on a wider-band gap (insulator) substrate, shows the similar thickness dependent blue-shift of the absorption edge but with an increase in the magnitude of near-band gap absorption with decreasing film thickness. Thickness dependent blue shift, energy vs. 1/d2, in two different systems, ZnO/Si and ZnO/SiO2, show a difference in their slopes. The observed phenomena can be consistently explained by the corresponding exciton (or carrier/s) deconfinement and confinement effects at the ZnO/Si and ZnO/SiO2 interface respectively, where Tanguy-Elliott amplitude pre-factor plays the key role through the electron-hole overlap factor at the interface.

  20. Improved efficiency of ZnO hierarchical particle based dye sensitized solar cell by incorporating thin passivation layer in photo-anode

    Science.gov (United States)

    Das, Priyanka; Mondal, Biswanath; Mukherjee, Kalisadhan

    2018-01-01

    Present article describes the DSSC performances of photo-anodes prepared using hydrothermal route derived ZnO particles having dissimilar morphologies i.e. simple micro-rod and nano-tips decorated micro-rod. The surface of nano-tips decorated micro-rod is uneven and patterned which facilitate more dye adsorption and better scattering of the incident light resulting superior photo-conversion efficiency (PCE) ( η 1.09%) than micro-rod ZnO ( η 0.86%). To further improve the efficiency of nano-tips decorated micro-rod ZnO based DSSC, thin passivation layer of ZnO is introduced in the corresponding photo-anode and a higher PCE ( η 1.29%) is achieved. The compact thin passivation layer here expedites the transportation of photo-excited electrons, restricts the undesired recombination reactions and prevents the direct contact of electrolyte with conducting substrates. Attempt is made to understand the effect of passivation layer on the transportation kinetics of photo-excited electrons by analyzing the electrochemical impedance spectra of the developed cells.

  1. Cu-Doped ZnO Thin Films Deposited by a Sol-Gel Process Using Two Copper Precursors: Gas-Sensing Performance in a Propane Atmosphere

    Directory of Open Access Journals (Sweden)

    Heberto Gómez-Pozos

    2016-01-01

    Full Text Available A study on the propane gas-sensing properties of Cu-doped ZnO thin films is presented in this work. The films were deposited on glass substrates by sol-gel and dip coating methods, using zinc acetate as a zinc precursor, copper acetate and copper chloride as precursors for doping. For higher sensitivity values, two film thickness values are controlled by the six and eight dippings, whereas for doping, three dippings were used, irrespective of the Cu precursor. The film structure was analyzed by X-ray diffractometry, and the analysis of the surface morphology and film composition was made through scanning electron microscopy (SEM and secondary ion mass spectroscopy (SIMS, respectively. The sensing properties of Cu-doped ZnO thin films were then characterized in a propane atmosphere, C3H8, at different concentration levels and different operation temperatures of 100, 200 and 300 °C. Cu-doped ZnO films doped with copper chloride presented the highest sensitivity of approximately 6 × 104, confirming a strong dependence on the dopant precursor type. The results obtained in this work show that the use of Cu as a dopant in ZnO films processed by sol-gel produces excellent catalysts for sensing C3H8 gas.

  2. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  3. Development of transparent conductive indium and fluorine co-doped ZnO thin films: Effect of F concentration and post-annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Hadri, A. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Taibi, M. [University of Mohammed V, LPCMIN, Ecole Normale Superieure, Rabat (Morocco); Loghmarti, M.; Nassiri, C.; Slimani Tlemçani, T. [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco); Mzerd, A., E-mail: mzerd@yahoo.fr [University Mohammed V, Faculty of Sciences, Physics Department, LPM, B.P. 1014, Rabat (Morocco)

    2016-02-29

    In the present work ZnO, In doped ZnO and In-F co-doped ZnO (IFZO) films were synthesized on heated glass substrates (350 °C) by the chemical spray technique. The effect of fluorine concentration on the structural, morphological, optical and electrical properties was studied. It was observed from X-ray diffraction (XRD) that the films have a polycrystalline structure and the intensity of the peaks depend on the doping and co-doping concentration. No diffraction peak related to dopants in XRD patterns along with shift in peaks angles to ZnO proved that In and F ions were doped into ZnO thin films. The Raman spectra confirm the hexagonal structure of the as-deposited films, and demonstrated an enhancement of the surface phonon mode of doped and co-doped films as compared to undoped films. The as-deposited films showed an average transmittance above 70%, in the wavelength range of 400–800 nm. A minimum electrical resistivity, in the order of 5.2 × 10{sup −} {sup 2} Ω cm was obtained for the IFZO thin film with 5 at.% F doping. Moreover, the electrical properties of doped and co-doped films were enhanced after post-deposition annealing. It was found that post-annealed thin films at 350 °C showed a decrease of one order of magnitude of the resistivity values. Such a transparent and conducting thin film can be suitable for optical and electrical applications owing to their low resistivity combined with high transmittance in the visible range. - Highlights: • Conductive transparent ZnO, IZO, IFZO thin films were deposited by spray pyrolysis. • Doping and co-doping affect morphology and optoelectrical properties. • As deposited film with high fluorine content exhibited high carrier mobility (55 cm{sup 2} V{sup −} {sup 1} s{sup −} {sup 1}). • Correlation between intrinsic defects and carrier mobility was observed. • Post-annealing in Ar atmosphere improves conductivity.

  4. Effect of atomic layer deposited Al2O3:ZnO alloys on thin-film silicon photovoltaic devices

    Science.gov (United States)

    Abdul Hadi, Sabina; Dushaq, Ghada; Nayfeh, Ammar

    2017-12-01

    In this work, we present the effects of the Al2O3:ZnO ratio on the optical and electrical properties of aluminum doped ZnO (AZO) layers deposited by atomic layer deposition, along with AZO application as the anti-reflective coating (ARC) layer and in heterojunction configurations. Here, we report complex refractive indices for AZO layers with different numbers of aluminum atomic cycles (ZnO:Al2O3 = 1:0, 39:1, 19:1, and 9:1) and we confirm their validity by fitting models to experimental data. Furthermore, the most conductive layer (ZnO:Al2O3 = 19:1, conductivity ˜4.6 mΩ cm) is used to fabricate AZO/n+/p-Si thin film solar cells and AZO/p-Si heterojunction devices. The impact of the AZO layer on the photovoltaic properties of these devices is studied by different characterization techniques, resulting in the extraction of recombination and energy band parameters related to the AZO layer. Our results confirm that AZO 19:1 can be used as a low cost and effective conductive ARC layer for solar cells. However, AZO/p-Si heterojunctions suffer from an insufficient depletion region width (˜100 nm) and recombination at the interface states, with an estimated potential barrier of ˜0.6-0.62 eV. The work function of AZO (ZnO:Al2O3 = 19:1) is estimated to be in the range between 4.36 and 4.57 eV. These material properties limit the use of AZO as an emitter in Si solar cells. However, the results imply that AZO based heterojunctions could have applications as low-cost photodetectors or photodiodes, operating under relatively low reverse bias.

  5. Assessment of structural, optical and conduction properties of ZnO thin films in the presence of acceptor impurities

    Science.gov (United States)

    Plugaru, R.; Plugaru, N.

    2016-06-01

    The structural, optical and electrical conduction properties of (Li/Cu,N):ZnO codoped thin films synthesized by the sol-gel method were investigated by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), transmission and absorption, photoluminescence (PL) and I-V measurements in order to bring evidence of the formation of acceptor centers by dual-acceptor codoping processes. The (Li 3%,N 5%):ZnO films consist of crystallites with average size of 15 nm, show 95% transmission in the visible region, and an optical band gap of 3.22 eV. The PL spectra show emission maxima at 3.21 and 2.96 eV which are related to the emission of acceptor centers and the presence of defects, respectively. Li occupies interstitial sites and may form Lii-N(O) defect complexes that act as acceptor centers. The (Cu 3%,N 5%):ZnO films consist of crystallites with average size of 12 nm, and exhibit 90% transmission in the visible region. The PL spectra reveal band edge emission at 3.23 eV and defect related emission at 2.74 eV. In the (Cu,N) codoped films, copper substitutes zinc and adopts mainly the Cu1+ state. A possible defect complex involving Cu and N determines the transition from n- to p-type conductivity. These findings are in agreement with results of electronic structure calculations at the GGA-PBE level.

  6. Dielectric particle and void resonators for thin film solar cell textures.

    Science.gov (United States)

    Mann, Sander A; Grote, Richard R; Osgood, Richard M; Schuller, Jon A

    2011-12-05

    Using Mie theory and Rigorous Coupled Wave Analysis (RCWA) we compare the properties of dielectric particle and void resonators. We show that void resonators-low refractive index inclusions within a high index embedding medium-exhibit larger bandwidth resonances, reduced peak scattering intensity, different polarization anisotropies, and enhanced forward scattering when compared to their particle (high index inclusions in a low index medium) counterparts. We evaluate amorphous silicon solar cell textures comprising either arrays of voids or particles. Both designs support substantial absorption enhancements (up to 45%) relative to a flat cell with anti-reflection coating, over a large range of cell thicknesses. By leveraging void-based textures 90% of above-bandgap photons are absorbed in cells with maximal vertical dimension of 100 nm.

  7. Characteristics of sputtered Al-doped ZnO films for transparent electrodes of organic thin-film transistor

    Energy Technology Data Exchange (ETDEWEB)

    Park, Yong Seob, E-mail: yongspark2011@gmail.com [Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, 446-701 (Korea, Republic of); Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of); Kim, Han-Ki [Department of Electrical and Electronic Engineering, Seonam University, Asan-si, 336-922 (Korea, Republic of)

    2011-09-01

    Aluminum-doped ZnO (AZO) thin-films were deposited with various RF powers at room temperature by radio frequency (RF) magnetron sputtering method. The electrical properties of the AZO film were improved with the increasing RF power. These results can be explained by the improvement of the crystallinity in the AZO film. We fabricated the organic thin-film transistor (OTFT) of the bottom gate structure using pentacene active and poly-4-vinyl phenol gate dielectric layers on the indium tin oxide gate electrode, and estimated the device properties of the OTFTs including drain current-drain voltage (I{sub D}-V{sub D}), drain current-gate voltage (I{sub D}-V{sub G}), threshold voltage (V{sub T}), on/off ratio and field effect mobility. The AZO film that grown at 160 W RF power exhibited low resistivity (1.54 x 10{sup -3} {Omega}.cm), high crystallinity and uniform surface morphology. The pentacene thin-film transistor using the AZO film that's fabricated at 160 W RF power exhibited good device performance such as the mobility of 0.94 cm{sup 2}/V s and the on/off ratio of {approx} 10{sup 5}. Consequently, the performance of the OTFT such as larger field-effect carrier mobility was determined the conductivity of the AZO source/drain (S/D) electrode. AZO films prepared at room temperature by the sputtering method are suitable for the S/D electrodes in the OTFTs.

  8. Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics

    Science.gov (United States)

    Sainju, Deepak

    Many modern optical and electronic devices, including photovoltaic devices, consist of multilayered thin film structures. Spectroscopic ellipsometry (SE) is a critically important characterization technique for such multilayers. SE can be applied to measure key parameters related to the structural, optical, and electrical properties of the components of multilayers with high accuracy and precision. One of the key advantages of this non-destructive technique is its capability of monitoring the growth dynamics of thin films in-situ and in real time with monolayer level precision. In this dissertation, the techniques of SE have been applied to study the component layer materials and structures used as back-reflectors and as the transparent contact layers in thin film photovoltaic technologies, including hydrogenated silicon (Si:H), copper indium-gallium diselenide (CIGS), and cadmium telluride (CdTe). The component layer materials, including silver and both intrinsic and doped zinc oxide, are fabricated on crystalline silicon and glass substrates using magnetron sputtering techniques. These thin films are measured in-situ and in real time as well as ex-situ by spectroscopic ellipsometry in order to extract parameters related to the structural properties, such as bulk layer thickness and surface roughness layer thickness and their time evolution, the latter information specific to real time measurements. The index of refraction and extinction coefficient or complex dielectric function of a single unknown layer can also be obtained from the measurement versus photon energy. Applying analytical expressions for these optical properties versus photon energy, parameters that describe electronic transport, such as electrical resistivity and electron scattering time, can be extracted. The SE technique is also performed as the sample is heated in order to derive the effects of annealing on the optical properties and derived electrical transport parameters, as well as the

  9. Spectroscopy and control of near-surface defects in conductive thin film ZnO

    KAUST Repository

    Kelly, Leah L

    2016-02-12

    The electronic structure of inorganic semiconductor interfaces functionalized with extended π-conjugated organic molecules can be strongly influenced by localized gap states or point defects, often present at low concentrations and hard to identify spectroscopically. At the same time, in transparent conductive oxides such as ZnO, the presence of these gap states conveys the desirable high conductivity necessary for function as electron-selective interlayer or electron collection electrode in organic optoelectronic devices. Here, we report on the direct spectroscopic detection of a donor state within the band gap of highly conductive zinc oxide by two-photon photoemission spectroscopy. We show that adsorption of the prototypical organic acceptor C60 quenches this state by ground-state charge transfer, with immediate consequences on the interfacial energy level alignment. Comparison with computational results suggests the identity of the gap state as a near-surface-confined oxygen vacancy.

  10. Ultraviolet Schottky detector based on epitaxial ZnO thin film

    Science.gov (United States)

    Jiang, Dayong; Zhang, Jiying; Lu, Youming; Liu, Kewei; Zhao, Dongxu; Zhang, Zhenzhong; Shen, Dezhen; Fan, Xiwu

    2008-05-01

    In this paper, we have prepared Schottky type ZnO metal-semiconductor-metal (MSM) ultraviolet (UV) detector. The structural, electrical, and optical measurements were carried out. The detector exhibited a peak responsivity of 0.337 A/W at 360 nm and the dark current was about 1 nA under 3 V bias. An ultraviolet-visible rejection ratio was obtained about more than four orders of magnitude from the fabricated detector. The 10-90% rise and fall time were 20 ns and 250 ns, respectively. We proposed that the detector had shown a gain, which was attributed to the trapping of hole carriers at the semiconductor-metal interface.

  11. Effects of aging time and annealing temperature on structural and optical properties of sol-gel ZnO thin films

    Directory of Open Access Journals (Sweden)

    Jitao Li

    2017-06-01

    Full Text Available The ZnO thin films have been prepared by sol-gel method at different annealing temperatures and aging time. The structural properties of ZnO thin films were investigated by X-ray diffraction (XRD patterns and atomic force microscope (AFM images. The results indicated that the film possess a hexagonal wurtzite structure with preferred orientation along the (002 direction. The crystalline quality of films improved with increasing post-annealing temperature, while gradually worsened with prolonging aging time. The optical properties of ZnO thin films were studied by the ultra-violet transmittance (UV-Vis and photoluminescence (PL spectra. The variations of UV-Vis transmittance and energy gap accorded well with the tendency presented in XRD patterns and AFM images. The PL spectra appeared the apparent ultraviolet emission and visible emissions. As the annealing temperature increased, the ultraviolet and visible emissions of films enhanced and decreased respectively. However, as the sol aging time prolonged, the PL emission presented an opposite tendency.

  12. Effects of intermittent atomization on the properties of Al-doped ZnO thin films deposited by aerosol-assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Linjie; Wang, Lixin [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Qin, Xiujuan, E-mail: qinxj@ysu.edu.cn [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Cui, Li [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); Shao, Guangjie [Hebei Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004 (China); State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004 (China)

    2016-04-30

    Al-doped ZnO (AZO) thin films were prepared on glass substrates with different atomization interval times by aerosol-assisted chemical vapor deposition method. The structure, morphology, and optical and electrical properties were investigated by X-ray diffractometer, atomic force microscope, UV-vis double beam spectrophotometer and 4 point probe method. ZnO thin films exhibited strong growth orientation along the (002) plane and the crystalline was affected by the atomization interval time. All the films had high transmittance and the films with interval times of 2 min and 4 min had good haze values for the transparent conducting oxide silicon solar cell applications. The AZO thin film had the best optical and electrical properties when the atomization interval time was 4 min. This is very important for the optoelectronic device applications. The surface morphology of AZO films depended on the atomization interval time. - Highlights: • Intermittent atomization is proved to be an effective measure. • Atomization interval time has an important influence on the crystallinity of films. • The surface morphology of ZnO films depends on atomization interval time. • Different hazes can be obtained by changing the atomization interval time.

  13. Optical, structural and morphological studies of (ZnO) nano-rod thin films for biosensor applications using sol gel technique

    Science.gov (United States)

    Wahab, H. A.; Salama, A. A.; El-Saeid, A. A.; Nur, O.; Willander, M.; Battisha, I. K.

    Uniformly distributed ZnO nano-rods (NRs) with diameters in nano-scale have been successfully grown in two stages; the first at annealing temperature (250-300 °C) for seed layer preparation on glass substrate by using sol gel technique and the second at low temperature (90-95 °C) by aqueous chemical growth (ACG) method. The same prepared thin film samples were grown on the surface of silver wire (0.25 mm in diameters) to produce electrochemical nano-sensors. The structure and the morphology of the prepared samples will be evaluated using XRD, Scanning electron microscope SEM. The absorption coefficient (α) and the band gap (Eg) for ZnO NRs thin films were determined. (α) was decreased by increasing the annealing temperature due to the increase of the surface roughness caused by higher temperature, where the creation of surface roughness gives rise to multi-reflections which, capture the reflected radiation and enhance the absorptivity. We are presenting an iron ion (Fe3+) potentiometric sensor based on functionalized ZnO nano-rods with selective iono-phore (18 crown 6). Zinc oxide nanorods (NRs) thin films with a diameter of about 68 up to 94 nm were grown on silver wire and gold coated glass.

  14. Controlling the surface nanostructure of ZnO and Al-doped ZnO thin films using electrostatic spraying for their application in 12% efficient perovskite solar cells.

    Science.gov (United States)

    Mahmood, Khalid; Swain, Bhabani Sankar; Jung, Hyun Suk

    2014-08-07

    In this paper, ZnO and Al-doped ZnO films were deposited using the electrospraying method and studied for the first time as photoanodes for efficient perovskite solar cells. Effects of substrate temperature, deposition time, applied voltage, substrate-to-nozzle distance and flow rate (droplet size) on the morphology of ZnO were studied with the help of FE-SEM images. The major factors such as the droplet size of the spray, substrate temperature and substrate-to-nozzle distance at deposition control the film morphology. Indeed, these factors determine the density of the film, its smoothness and the flow of solution over the substrate. The droplet size was controlled by the flow rate of the spray. The substrate-to-nozzle distance and flow rate will both regulate the solution amount deposited on the surface of the substrate. The most favorable conditions for a good quality ZnO thin film were a long substrate-to-nozzle distance and lower solution flow rates. In situ droplet size measurement shows that the size and dispersion of particles were narrowed. The method was shown to have a high deposition rate and efficiency relative to well-established thin film deposition techniques such as chemical and physical vapor deposition. In addition, it also allows easy control of the microstructure and stoichiometry of the deposits. The pure ZnO film produced under optimum conditions (440 nm thick) demonstrated a high power conversion efficiency (PCE) of 10.8% when used as a photoanode for perovskite solar cells, owing to its high porosity, uniform morphology and efficient electron transport. For thicker films a drastic decrease in PCE was observed due to their low porosity. We also observed that the open-circuit voltage increases from 1010 mV to 1045 mV and also the PCE increases from 10.8% to 12.0% when pure ZnO films were doped with aluminum (Al). Under atmospheric pressure, the electrospraying system produces the reasonably uniform-sized droplets of smaller size, so the films

  15. Phase Composition Maps integrate mineral compositions with rock textures from the micro-meter to the thin section scale

    Science.gov (United States)

    Willis, Kyle V.; Srogi, LeeAnn; Lutz, Tim; Monson, Frederick C.; Pollock, Meagen

    2017-12-01

    Textures and compositions are critical information for interpreting rock formation. Existing methods to integrate both types of information favor high-resolution images of mineral compositions over small areas or low-resolution images of larger areas for phase identification. The method in this paper produces images of individual phases in which textural and compositional details are resolved over three orders of magnitude, from tens of micrometers to tens of millimeters. To construct these images, called Phase Composition Maps (PCMs), we make use of the resolution in backscattered electron (BSE) images and calibrate the gray scale values with mineral analyses by energy-dispersive X-ray spectrometry (EDS). The resulting images show the area of a standard thin section (roughly 40 mm × 20 mm) with spatial resolution as good as 3.5 μm/pixel, or more than 81 000 pixels/mm2, comparable to the resolution of X-ray element maps produced by wavelength-dispersive spectrometry (WDS). Procedures to create PCMs for mafic igneous rocks with multivariate linear regression models for minerals with solid solution (olivine, plagioclase feldspar, and pyroxenes) are presented and are applicable to other rock types. PCMs are processed using threshold functions based on the regression models to image specific composition ranges of minerals. PCMs are constructed using widely-available instrumentation: a scanning-electron microscope (SEM) with BSE and EDS X-ray detectors and standard image processing software such as ImageJ and Adobe Photoshop. Three brief applications illustrate the use of PCMs as petrologic tools: to reveal mineral composition patterns at multiple scales; to generate crystal size distributions for intracrystalline compositional zones and compare growth over time; and to image spatial distributions of minerals at different stages of magma crystallization by integrating textures and compositions with thermodynamic modeling.

  16. Intermittent spray pyrolytic growth of nanocrystalline and highly oriented transparent conducting ZnO thin films: Effect of solution spray rate

    Energy Technology Data Exchange (ETDEWEB)

    Mahajan, C.M., E-mail: c_mahajan9@yahoo.com [Department of Engineering Sciences and Humanities, Vishwakarma Institute of Technology, Pune 411 037 (India); School of Energy Studies, University of Pune, Pune 411 007 (India); Takwale, M.G. [School of Energy Studies, University of Pune, Pune 411 007 (India)

    2014-01-25

    Highlights: • ZnO films show enhancement in structural, optical and electrical properties. • Film orientation is altered from [0 0 2] to [1 0 1] direction for higher S{sub f} > 5 ml/min. • E{sub g} (eV) is influenced by variation in crystallinity, grain size and film thickness. • Nanocrystalline ZnO films are superior for TCO and optoelectronic applications. • FE-SEM and AFM study reveal growth of an array of vertically aligned ZnO nanorods. -- Abstract: Uniformly distributed jet of fine droplets was created with control of spray rate (S{sub f}) to deposit nanocrystalline ZnO thin films by spray pyrolysis technique. X-ray diffraction analysis indicated the polycrystalline film growth with most preferred orientation along c-axis [0 0 2] direction for S{sub f} ⩽ 4.5 ml/min, above which films favored [1 0 1] direction. FE-SEM and AFM analysis revealed the uniform vertical growth of ZnO nano-rods for S{sub f} = 2.5 ml/min and the film exhibited highest transmittance (95%) with lowest dark resistivity (∼10{sup −2} Ω-cm). The deposition rate increased due to rise in S{sub f}. Alteration of crystallinity, grain size and film thickness with variation in S{sub f} lead to variation of band-gap energy from 3.198 eV to 3.302 eV. ZnO film deposited at optimal S{sub f} = 2.5 ml/min exhibited maximum electrical conductivity σ = 78.8 Ω{sup −1}-cm{sup −1}, minimum sheet resistance R{sub s} = 2.04 × 10{sup 2} Ω/□ and highest figure of merit Φ{sub TC} = 2.93 × 10{sup −3} Ω{sup −1}.

  17. Microstructure and gas-sensing properties of sol-gel ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Musat, V. [Department of Metals and Materials Science, ' Dunarea de Jos' University of Galati, 800008 Galati (Romania)], E-mail: viorica.musat@ugal.ro; Rego, A.M. [Department of Chemical and Biological Engineering, CQFM, Technical University of Lisbon, 1049-001 Lisbon (Portugal); Monteiro, R.; Fortunato, E. [Department of Materials Science, CENIMAT, Faculty of Sciences and Technology, New University of Lisbon, Campus da Caparica, 2829-516 Caparica (Portugal)

    2008-02-15

    The paper presents the properties of zinc oxide thin films deposited on glass substrate via dip-coating technique. Zinc acetate dehydrate, ethanol and monoethanol amine were used as starting materials and N{sub 2} gas was used as thermal annealing atmosphere for film crystallization. The effect of withdrawal speed on the crystalline structure, morphology, zinc and nitrogen chemical states, optical, electrical and gas-sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and photoreduction-ozone reoxidation data.

  18. Phase and Texture Evolution in Chemically Derived PZT Thin Films on Pt Substrates

    Science.gov (United States)

    2014-09-01

    HOE BOl; HOE, Allentown, PA). In situ XRD experiments were conducted using synchro tron X ray beamline 6 ID B at the Advanced Photon Source...experimental geometry used on beamline 6 10 B for in situ crystaUization of lead zirconate titanate thin films, and (b) representative 2D detector image

  19. P-type nitrogen- and phosphorus-doped ZnO thin films grown by pulsed laser deposition on sapphire substrates

    Science.gov (United States)

    Mosnier, J.-P.; Chakrabarti, S.; Doggett, B.; McGlynn, E.; Henry, M. O.; Meaney, A.

    2007-02-01

    Nitrogen- and phosphorus-doped ZnO thin films were grown by pulsed laser deposition using an electron cyclotron resonance (ECR) nitrogen plasma ion source or a ZnO:P IIO 5 doped target, as the dopant source, respectively. Both types of films were grown on sapphire substrates first coated at low temperature with a ZnO buffer layer. For the N-doped ZnO thin films, temperature-dependent Van der Pauw measurements showed consistent p-type behavior over the measured temperature range of 200-450 K, with typical room temperature acceptor concentrations and mobilities of 5 x 10 15 cm -3 and 5.61 cm2/Vs, respectively. The room-temperature photoluminescence spectrum of a N-doped ZnO thin film featured a broad near band-edge emission at about 3.1 eV photon energy with a width of 0.5 eV. XPS studies confirmed the incorporation of nitrogen in the samples. The ZnO:P layers (with phosphorus concentrations of between 0.01 and 1 wt %) typically showed weak n-type conduction in the dark, with a resistivity of 70 Ω.cm, a Hall mobility of μ n ~ 0.5 cm2V -1s -1 and a carrier concentration of n ~ 3 x 10 17 cm -3 at room temperature. After exposure to an incandescent light source, the samples underwent a change from n- to p-type conduction, with an increase in mobility and a decrease in concentration for temperatures below 300K. Electrical measurements showed noticeable differences for both types of doped films when carried out in air or in vacuum. The results are discussed in terms of both the presence of surface conducting channels and the influence of photoconductive effects.

  20. Studies on nonvolatile resistance memory switching in ZnO thin films

    Indian Academy of Sciences (India)

    Administrator

    oxides show extreme changes in resistance between high and low resistance states on application of suitable bias voltage. The phenomenon of the resistance change in. RRAM differs from that observed in PRAM in the sense that there is no phase change involved in the thin film of the material during switching between ...

  1. Optical properties of the plasma hydrogenated ZnO thin films

    Czech Academy of Sciences Publication Activity Database

    Chang, Yu-Ying; Stuchlík, Jiří; Neykova, Neda; Souček, J.; Remeš, Zdeněk

    2017-01-01

    Roč. 68, č. 7 (2017), s. 70-73 ISSN 1335-3632 R&D Projects: GA ČR GC16-10429J Institutional support: RVO:68378271 Keywords : metal oxide * magnetron sputtering * thin films * reflectance interferometry * photothermal deflection spectroscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.483, year: 2016

  2. Thin films of conductive ZnO patterned by micromolding resulting in nearly isolated features

    NARCIS (Netherlands)

    Göbel, Ole; Blank, David H.A.; ten Elshof, Johan E.

    2010-01-01

    Patterned and continuous thin films of conductive Al-doped zinc oxide (ZnO:Al) were prepared on different substrates from a polymeric precursor solution. Their electric conductivity and light transmittance (for visible and UV light) was measured at room temperature. By means of a simple device,

  3. Preparation of manganese-doped ZnO thin films and their ...

    Indian Academy of Sciences (India)

    In this study, pure and manganese-doped zinc oxide (Mn:ZnO) thin films were deposited on quartz substrate following successive ion layer adsorption and reaction (SILAR) technique. The film growth rate was found to increase linearly with number of dipping cycle. Characterization techniques of XRD, SEM with EDX and ...

  4. Improved conductivity of ZnO thin films by exposure to an atmospheric hydrogen plasma

    NARCIS (Netherlands)

    Illiberi, A.; Kniknie, B.; Deelen, J. van; Steijvers, H.L.A.H.; Habets, D.; Simons, P.J.P.M.; Janssen, A.C.; Beckers, E.H.A.

    2012-01-01

    Aluminum-doped zinc oxide (ZnOx:Al) films have been deposited on a moving glass substrate by a high throughput metalorganic chemical vapor deposition process at atmospheric pressure. Thin (< 250 nm) ZnOx:Al films have a poor crystalline quality, due to a small grain size and the presence of

  5. Electronic transport in highly conducting Si-doped ZnO thin films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetsov, Vladimir L.; Vai, Alex T.; Edwards, Peter P., E-mail: peter.edwards@chem.ox.ac.uk [Department of Chemistry, Inorganic Chemistry Laboratory, University of Oxford, Oxford OX1 3QR (United Kingdom); Al-Mamouri, Malek; Stuart Abell, J. [Department of Metallurgy and Materials, University of Birmingham, Birmingham B15 2TT (United Kingdom); Pepper, Michael [Department of Electronic and Electrical Engineering, University College London, London WC1E 7JE (United Kingdom)

    2015-12-07

    Highly conducting (ρ = 3.9 × 10{sup −4} Ωcm) and transparent (83%) polycrystalline Si-doped ZnO (SiZO) thin films have been deposited onto borosilicate glass substrates by pulsed laser deposition from (ZnO){sub 1−x}(SiO{sub 2}){sub x} (0 ≤ x ≤ 0.05) ceramic targets prepared using a sol-gel technique. Along with their structural, chemical, and optical properties, the electronic transport within these SiZO samples has been investigated as a function of silicon doping level and temperature. Measurements made between 80 and 350 K reveal an almost temperature-independent carrier concentration consistent with degenerate metallic conduction in all of these samples. The temperature-dependent Hall mobility has been modeled by considering the varying contribution of grain boundary and electron-phonon scattering in samples with different nominal silicon concentrations.

  6. Growth and Characterization of Nanocrystalline ZnO Thin Films by Spray Pyrolysis: Effect of Molarity of Precursor Solution

    Directory of Open Access Journals (Sweden)

    Dharmendra Mishra

    2009-06-01

    Full Text Available Nanocrystalline ZnO thin films have been prepared by spray pyrolysis technique. Variation of structural, morphological, optical and electrical properties with molarity of the precursor solution is investigated in detail. XRD studies have shown that the films are polycrystalline in nature having hexagonal wurtzite structure with strong c-axis orientation which increases with increase in molarity of the precursor solution. Also the grain size increases from ~ 13.3 nm to 14.4 nm. SEM shows bead like structure scattered throughout the surface. The transmission study reveals a decrease in transmittance with an increase in molarity and the optical band gap lies in the range of ~ 3.25 eV to 3.27 eV for all the samples. The resistivity is found to be of the order of ~10-2 Ωcm, carrier concentration is ~ 1016/ cm3 and hall mobility is ~ 4 cm2/Vs using Vander Pauw method. Sheet resistance is estimated to be ~ 102 Ω/Sq for the samples under investigation.

  7. Enhancement Of Free Exciton Peak Intensity In Reactively Sputtered ZnO Thin Films On (0001) Al2O3

    Science.gov (United States)

    Tüzemen, S.; Gür, Emre; Yildirim, T.; Xiong, G.; Williams, R. T.

    2007-04-01

    Wide bandgap materials such as GaN with its direct bandgap structure have been developed rapidly for applications in short wavelength light emission. ZnO, II-VI oxide semiconductor, is also promising for various technological applications, especially for optoelectronic light emitting devices in the visible and ultraviolet (UV) range of the electromagnetic spectrum. Above-band-edge absorption spectra of reactively sputtered Zn- and O-rich samples exhibit free exciton (FX) and neutral acceptor bound exciton (A°X) features. It is shown that the residual acceptors which bind excitons with an energy of 75 meV reside about 312 meV above the valence band, according to effective mass theory. An intra-bandgap absorption feature peaking at 2.5 eV shows correlation with the characteristically narrow A-free exciton peak intensity. Relevant annealing processes are presented as a function of time and temperature dependently for both Zn- and O- rich thin films. Enhancement of the free exciton peak intensity is observed without disturbing the residual shallow acceptor profile which is necessary for at least background p-type conductivity.

  8. Thin wetted film cylindrical flow photo reactor for the degradation of Procion blue H-B dye over TiO2 and ZnO.

    Science.gov (United States)

    Neelavannan, M G; Basha, C Ahmed

    2011-01-01

    A thin wetted film cylindrical flow reactor was fabricated for photocatalytic oxidation of Procion blue H-B dye in textile washwater with the suspensions of TiO2 and ZnO. The disappearance of colour and organic reduction were studied in terms of the removal of colour and chemical oxygen demand (COD). Operating parameters such as effect of pH, UV irradiation with and without catalyst, initial concentration of dye and effect of flow rate were studied and kinetics of Procion blue H-B dye has been studied over TiO2 and ZnO surfaces. Since adsorption is the prerequisite condition for decolorization/degradation of dye molecules in the presence of heterogeneous catalysis, the Langmuir and Freundlich isotherms were examined to verify the adsorption intensity. The results clearly demonstrated that, the optimum loading of the photocatalyst was found to be 300 and 400 mg/L of TiO2 and ZnO, respectively. The maximum COD reduction efficiency was 68% for TiO2 and 58% for ZnO. On the other hand, the colour removal efficiency was found to be 74% and 69%, respectively for TiO2- and ZnO-assisted systems under optimum conditions. Conclusively, these two semiconductors could degrade Procion blue H-B dye at different time intervals and both isotherms fit well.

  9. CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES: Structural and Electrical Properties of Single Crystalline Ga-Doped ZnO Thin Films Grown by Molecular Beam Epitaxy

    Science.gov (United States)

    Lu, Zhong-Lin; Zou, Wen-Qin; Xu, Ming-Xiang; Zhang, Feng-Ming; Du, You-Wei

    2009-11-01

    High-quality Ga-doped ZnO (ZnO:Ga) single crystalline films with various Ga concentrations are grown on a-plane sapphire substrates using molecular-beam epitaxy. The site configuration of doped Ga atoms is studied by means of x-ray absorption spectroscopy. It is found that nearly all Ga can substitute into ZnO lattice as electrically active donors, a generating high density of free carriers with about one electron per Ga dopant when the Ga concentration is no more than 2%. However, further increasing the Ga doping concentration leads to a decrease of the conductivity due to partial segregation of Ga atoms to the minor phase of the spinel ZnGa2O4 or other intermediate phase. It seems that the maximum solubility of Ga in the ZnO single crystalline film is about 2 at.% and the lowest resistivity can reach 1.92 × 10-4 Ω·cm at room temperature, close to the best value reported. In contrast to ZnO:Ga thin film with 1% or 2% Ga doping, the film with 4% Ga doping exhibits a metal semiconductor transition at 80 K. The scattering mechanism of conducting electrons in single crystalline ZnO:Ga thin film is discussed.

  10. Sputtered Al-doped ZnO transparent conducting thin films suitable for silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ben Ayadi, Z., E-mail: Zouhaier.BenAyadi@fsg.rnu.tn [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); Mahdhi, H. [Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l' Environnement, Université de Gabès, Faculté des Sciences de Gabès, Cité Erriadh Manara Zrig, 6072 Gabès (Tunisia); Djessas, K. [Laboratoire Procédés, Matériaux et Energie Solaire (PROMES-CNRS), TECNOSUD, Rambla de la Thermodynamique, 66100 Perpignan (France); Université de Perpignan Via Domitia, 52 Avenue Paul Alduy, 68860, Perpignan Cedex9 (France); Gauffier, J.L. [Département de Génie Physique, INSA de Toulouse, 135 Avenue de Rangueil, 31077 Toulouse cedex 4 (France); and others

    2014-02-28

    Highly transparent conducting Al-doped zinc oxide (AZO) thin films have been grown onto p-type porous silicon substrates by RF-magnetron sputtering at room temperature using aluminum doped nanocrystalline powder. The obtained AZO films were polycrystalline with a hexagonal wurtzite structure and preferentially oriented in the (002) crystallographic direction. The films are highly transparent in the visible wavelength region with a transmittance higher than 85% and an electrical resistivity of 1.56 × 10{sup −4} Ω·cm was obtained at room temperature. On the other hand, we have studied the position of the p–n junction involved in the In{sub 2}O{sub 3}:SnO{sub 2}/(n)AZO/Si(p) structure, by electron-beam induced current technique. Current density–voltage characterizations in dark and under illumination were also investigated. The cell exhibits an efficiency of 5%. - Highlights: • Al-doped zinc oxide (AZO) thin films were grown by RF-magnetron sputtering. • AZO nanopowder compacted target was prepared by a sol–gel method. • AZO thin films are polycrystalline and have preferred orientation along c-axis. • We report a photovoltaic effect in Si(p)/porous silicon/AZO heterostructure. • The cell exhibits an efficiency of 5%.

  11. Al-Sn doped ZnO thin film nanosensor for monitoring NO2 concentration

    Directory of Open Access Journals (Sweden)

    G.S. Hikku

    2017-07-01

    Full Text Available The metal oxide semiconductor gas sensor technology is robust and has quick response times. In this work, aluminium and tin co-doped zinc oxide (ASZO thin films were synthesized by a sol–gel dip-coating process as sensors for the greenhouse gas nitrogen dioxide (NO2. The prepared ASZO thin films were characterized using such techniques as X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy (AFM and photoluminescence (PL emission studies in order to analyze the elemental confirmation, particle size, surface roughness and optical emission properties, respectively. The XRD data reveals the hexagonal structure of ASZO and that the preferential orientation is along 2θ = 36.19°. SEM images of the ASZO thin film exhibit rod-like formations of ASZO on the substrate. The ASZO films show enhanced sensing behaviour, sensing NO2 gas even at 2 ppm at an operating temperature of 170 °C. The response and recovery times were determined to be 30 and 20 s, respectively.

  12. Effect of precursor solvent on the opto-electrical properties of spin coated transparent conducting ZnO: Ga thin films

    Energy Technology Data Exchange (ETDEWEB)

    Srivastava, Amit Kumar, E-mail: akrsri@gmail.com; Kumar, Jitendra

    2015-07-15

    ZnO: Ga thin films have been prepared by spin coating on glass substrate using solutions of zinc acetate dihydrate and gallium nitrate hydrate precursors in methanol, ethanol and 2-methoxyethanol with mono-ethanolamine as complexing agent to examine the effect of solvent on their opto-electrical characteristics. The selection of the solvent involves factors like toxicity, sol stability and the film properties. Accordingly, ethanol is shown to be suitable for yielding a stable sol to produce low cost 1 at% Ga−ZnO thin films useful for photovoltaic applications. These films exhibit hexagonal structure with (0001) preferred orientation, optical transmittance of ∼75−96% in wavelength range 400−900 nm, electrical resistivity of ∼ 3 × 10{sup −2} Ω-cm and electron mobility of ∼24 cm{sup 2}/ V. s. - Highlights: • c-axis preferred orientation of spin coated Ga-doped ZnO thin films. • Selection of solvents for preparation of precursor solutions. • Alternative transparent conducting oxide thin films. • Low cost method.

  13. Highly textured zinc oxide films by room temperature ion beam assisted deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koehl, D.; Wuttig, M. [I. Institute of Physics, RWTH Aachen University (Germany); Luysberg, M. [Ernst Ruska-Zentrum fuer Mikroskopie und Spektroskopie mit Elektronen/IFF, Forschungszentrum Juelich (Germany)

    2009-10-15

    A new ion beam assisted sputter deposition technique has been developed which facilitates room temperature fabrication of thin ZnO films with exceptional structural order. The well-defined texture of these films is comparable to films deposited at elevated temperatures of typically 200-300 C in standard sputter processes. Structural investigations reveal that the applied Xe{sup +} ion bombardment mainly affects the nucleation of ZnO crystallites. The high structural order of the nucleation layer is maintained in subsequent stages of film growth. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Multiphase CuO{sub z}-CeO{sub 2-{delta}} thin films by pulsed laser deposition technique: experimental texture evolutions and kinetics modeling

    Energy Technology Data Exchange (ETDEWEB)

    Klimczak-Chmielowska, Magdalena; Chmielowski, Radoslaw; Kopia, Agnieszka; Kusinski, Jan; Villain, Sylvie; Leroux, Christine; Gavarri, Jean-Raymond

    2004-06-30

    CeO{sub 2} thin films for gas sensors doped with Cu were elaborated by pulsed-laser deposition (PLD) technique from Cu-CeO{sub 2} targets. The films were deposited on oriented Si substrates for various deposition times. Scanning electron microscopy analyses evidenced correlations between crystalline texture of thin films, copper atom fractions and deposition times. A statistical study of grain sizes and texture allows evaluation of growth rates. From X-ray diffraction analyses, it was clearly established that texture effects are continuously modified as the Cu atom fraction increases: preferred (111) orientations of CeO{sub 2} crystals change into (200) orientations. Such morphological effects might be involved by the presence of a CuO{sub z} phase, formed during the condensation process and peculiarly associated with the laser deposition technique. A texture parameter R corresponding to the volume ratio of oriented phases is defined. A first modeling of this texture parameter as a function of Cu composition x and deposition time t is proposed.

  15. Some properties of thin film structures on the base of ZnO obtained by MOCVD method

    OpenAIRE

    Roshchina, N. M.; P. S. Smertenko; Stepanov, V. G.; Zavyalova, L. V.; O.S. Lytvyn

    2012-01-01

    This paper reports on the ZnO film structures obtained by MOCVD method on Si substrates. The phase composition, structure and morphology of ZnO films as well as electrophysical properties of ZnO/Si heterojunction on their base were investigated. The possible charge flow mechanisms in ZnO/Si heterojunction are discussed.

  16. Structural, morphological characteristics and optical properties of Y doped ZnO thin films by sol-gel spin coating method

    Science.gov (United States)

    Thirumoorthi, M.; Thomas Joseph Prakash, J.

    2015-09-01

    Un-doped and Y doped ZnO thin films were deposited successfully by sol-gel spin coating method with different Y concentrations. The X-ray diffraction spectra revealed that all the films have polycrystalline of hexagonal wurtzite structure. SEM images of the films show different micro structure with nano clusters and show a reduction in surface roughness. The EDX spectrum confirms the presence of Zn, O and Y elements in the prepared films. The optical transmittance spectrum indicates the average transmittance of the films is increased from 78% to 83%. The optical band gaps of the ZnO films were changed from 3.33 eV to 3.43 eV with increasing Y doping. PL spectra show the blue shift in near band edge (NBE) UV emission. The presence of functional groups and the chemical bonding is confirmed by FTIR spectra. The Hall measurements show that the films have n-type conductivity.

  17. Wet-Chemical Surface Texturing of Sputter-Deposited ZnO:Al Films as Front Electrode for Thin-Film Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Xia Yan

    2015-01-01

    Full Text Available Transparent conductive oxides (TCOs play a major role as the front electrodes of thin-film silicon (Si solar cells, as they can provide optical scattering and hence improved photon absorption inside the devices. In this paper we report on the surface texturing of aluminium-doped zinc oxide (ZnO:Al or AZO films for improved light trapping in thin-film Si solar cells. The AZO films are deposited onto soda-lime glass sheets via pulsed DC magnetron sputtering. Several promising AZO texturing methods are investigated using diluted hydrochloric (HCl and hydrofluoric acid (HF, through a two-step etching process. The developed texturing procedure combines the advantages of the HCl-induced craters and the smaller and jagged—but laterally more uniform—features created by HF etching. In the two-step process, the second etching step further enhances the optical haze, while simultaneously improving the uniformity of the texture features created by the HCl etch. The resulting AZO films show large haze values of above 40%, good scattering into large angles, and a surface angle distribution that is centred at around 30°, which is known from the literature to provide efficient light trapping for thin-film Si solar cells.

  18. Highly transparent and reproducible nanocrystalline ZnO and AZO thin films grown by room temperature pulsed-laser deposition on flexible Zeonor plastic substrates

    Science.gov (United States)

    Inguva, Saikumar; Vijayaraghavan, Rajani K.; McGlynn, Enda; Mosnier, Jean-Paul

    2015-09-01

    Zeonor plastics are highly versatile due to exceptional optical and mechanical properties which make them the choice material in many novel applications. For potential use in flexible transparent optoelectronic applications, we have investigated Zeonor plastics as flexible substrates for the deposition of highly transparent ZnO and AZO thin films. Films were prepared by pulsed laser deposition at room temperature in oxygen ambient pressures of 75, 150 and 300 mTorr. The growth rate, surface morphology, hydrophobicity and the structural, optical and electrical properties of as-grown films with thicknesses ˜65-420 nm were recorded for the three oxygen pressures. The growth rates were found to be highly linear both as a function of film thickness and oxygen pressure, indicating high reproducibility. All the films were optically smooth, hydrophobic and nanostructured with lateral grain shapes of ˜150 nm wide. This was found compatible with the deposition of condensed nanoclusters, formed in the ablation plume, on a cold and amorphous substrate. Films were nanocrystalline (wurtzite structure), c-axis oriented, with average crystallite size ˜22 nm for ZnO and ˜16 nm for AZO. In-plane compressive stress values of 2-3 GPa for ZnO films and 0.5 GPa for AZO films were found. Films also displayed high transmission greater than 95% in some cases, in the 400-800 nm wavelength range. The low temperature photoluminescence spectra of all the ZnO and AZO films showed intense near band edge emission. A considerable spread from semi-insulating to n-type conductive was observed for the films, with resistivity ˜103 Ω cm and Hall mobility in 4-14 cm2 V-1 s-1 range, showing marked dependences on film thickness and oxygen pressure. Applications in the fields of microfluidic devices and flexible electronics for these ZnO and AZO films are suggested.

  19. Structural and optical properties of a radio frequency magnetron-sputtered ZnO thin film with different growth angles.

    Science.gov (United States)

    Ko, Ki-Han; Joung, Yeun-Ho; Choi, Won Seok; Park, Mungi; Lee, Jaehyung; Hwang, Hyun-Suk

    2012-01-05

    This study introduces optical properties of a columnar structured zinc oxide [ZnO] antireflection coating for solar cells. We obtained ZnO films of columnar structure on glass substrates using a specially designed radio frequency magnetron sputtering system with different growth angles. Field-emission scanning electron microscopy was utilized to check the growth angles of the ZnO films which were controlled at 0°, 15°, and 30°. The film thickness was fixed at 100 nm to get a constant experiment condition. Grain sizes of the ZnO films were measured by X-ray diffraction. A UV-visible spectrometer was used to measure the transmittance and reflectance of the ZnO film columnar structures as a function of the growth angles.

  20. Phase and texture evolution in solution deposited lead zirconate titanate thin films: Formation and role of the Pt3Pb intermetallic phase

    Science.gov (United States)

    Nittala, Krishna; Mhin, Sungwook; Dunnigan, Katherine M.; Robinson, Douglas S.; Ihlefeld, Jon F.; Kotula, Paul G.; Brennecka, Geoff L.; Jones, Jacob L.

    2013-06-01

    Solution deposition is widely used for the fabrication of lead zirconate titanate (PZT) thin films on platinized silicon substrates. However, phase and texture evolution during the crystallization process is not well understood, particularly due to the difficulty in tracking changes in the thin films in situ during heating. In this work, we characterized phase and texture evolution in situ during heating and crystallization of PZT thin films using high-energy X-ray diffraction. Films were pyrolyzed at either 300 °C or 400 °C and heated at various rates between 0.5 °C/s and ˜150 °C/s. For films that were pyrolyzed at 300 °C, the most rapid heating rates first induced strong intensities from a transient Pt3Pb phase. The Pt3Pb phase inherited the texture of the pre-existing platinum layer. Combined with other observations, the results suggest the conversion of the platinum to the intermetallic phase near the interface due to the interdiffusion of lead. In all experimental variations, the pyrochlore phase was observed to form concurrently with the disappearance of the Pt3Pb phase after which the perovskite phase ultimately crystallized. For films that were pyrolyzed at 400 °C, the Pt3Pb phase was not observed at any of the heating rates; instead, the pyrochlore phase was first observed, followed by the perovskite phase. Independent of the pyrolysis temperature or observation of Pt3Pb, a 111-dominant crystallographic texture formed in the perovskite phase when crystallized using fast heating rates. These results demonstrate that 111 textures in solution-derived PZT thin films are not correlated with the observation of Pt3Pb or other intermetallic or transient phases.

  1. Transmission Electron Microscopy of the Textured Silver Back Reflector of a Thin Film Silicon Solar Cell: From Crystallography to Optical Absorption

    DEFF Research Database (Denmark)

    Duchamp, Martial; Söderström, K.; Jeangros, Q.

    2011-01-01

    the creation of surface plasmon polaritons. Here, we use transmission electron microscopy (TEM) techniques to study the grain structure of a Ag thin-film that was sputtered on top of 2-μm-thick rough ZnO layer - defects, such as twin-boundaries have been observed. A smoothing of the top Ag surface was also......The study of light trapping in amorphous, microcrystalline and micromorph thin-film Si solar cells is an important and active field of investigation. It has been demonstrated that the use of a rough Ag back-reflector lead to an increase of short circuit current but also to losses through...... the origin of optical absorption losses previously measured in Ag back-reflector of thin-film Si solar cells....

  2. Effects of Hydrogen Plasma on the Electrical Properties of F-Doped ZnO Thin Films and p-i-n α-Si:H Thin Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2014-01-01

    Full Text Available 1.5 wt% zinc fluoride (ZnF2 was mixed with zinc oxide powder to form the F-doped ZnO (FZO composition. At first, the FZO thin films were deposited at room temperature and 5×10-3 Torr in pure Ar under different deposition power. Hall measurements of the as-deposited FZO thin films were investigated, and then the electrical properties were used to find the deposition power causing the FZO thin films with minimum resistance. The FZO thin films with minimum resistance were further treated by H2 plasma and then found their variations in the electrical properties by Hall measurements. Hydrochloric (HCl acid solutions with different concentrations (0.1%, 0.2%, and 0.5% were used to etch the surfaces of the FZO thin films. Finally, the as-deposited, HCl-etched as-deposited, and HCl-etched H2-plasma-treated FZO thin films were used as transparent electrodes to fabricate the p-i-n α-Si:H thin film solar cells and their characteristics were compared in this study. We would show that using H2-plasma-treated and HCl-etched FZO thin films as transparent electrodes would improve the efficiency of the fabricated thin film solar cells.

  3. Study on the doping effect of Sn-doped ZnO thin films

    Science.gov (United States)

    Ajili, Mejda; Castagné, Michel; Turki, Najoua Kamoun

    2013-01-01

    Tin doped zinc oxide (ZnO:Sn) thin films were deposited onto Pyrex glass substrates by chemical spray pyrolysis technique starting from zinc acetate (CH3CO2)2Znṡ2H2O and tin chloride SnCl2. The effect of Sn doping on structural, optical and electrical properties was investigated. The atomic percentages of dopant in ZnO-based solution were y = [Sn4+]/[Zn2+] = 0%, 0.2%, 0.6% and 1%. It was found that all the thin films have a preferential c-axis orientation. With increase of Sn doping, the peak position of the (0 0 2) plane was shifted to the high 2θ values. ZnO:Sn demonstrated obviously improved surface roughness, reduced average crystallite size, enhanced Hall mobility and reduced resistivity. Among all of the tin doped zinc oxide in this study, films doped with 0.6 at.% Sn concentration exhibited the best properties, namely a Hall mobility of 9.22 cm2 V-1 s-1, an RMS roughness of 37.15 nm and a resistivity of 8.32 × 10-2 Ω cm.

  4. 700 keV Ni{sup +2} ions induced modification in structural, surface, magneto-optic and optical properties of ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Fiaz Khan, M. [Laser and Optronics Centre, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Siraj, K., E-mail: khurram.uet@gmail.com [Laser and Optronics Centre, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Anwar, M.S. [Department of Physics, Syed Babar Ali School of Science and Engineering, Lahore University of Management Sciences (LUMS), Opposite Sector U, D.H.A. Lahore 54792 (Pakistan); Irshad, M. [Laser and Optronics Centre, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Hussain, J. [National Centre for Physics, Islamabad (Pakistan); Faiz, H.; Majeed, S. [Laser and Optronics Centre, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Dosmailov, M.; Patek, J.; Pedarnig, J.D. [Institute of Applied Physics, Johannes Kepler University Linz (Austria); Rafique, M.S. [Laser and Optronics Centre, Department of Physics, University of Engineering and Technology, Lahore (Pakistan); Naseem, S. [Center of Excellence in Solid State Physics, University of Punjab, Lahore (Pakistan)

    2016-02-01

    Highlights: • 700 keV ion irradiation on ZnO thin films was done at different ion fluence. • XRD results showed improved crystallinity. • At lower fluence the microparticles were observed whereas ZnO micro rods were observed at higher fluences. • The Verdet constant and optical band gap energy of ZnO thin films are also well modified. - Abstract: We investigate the effect of 700 keV Ni{sup +2} ions irradiation at different ion fluences (1 × 10{sup 13}, 1 × 10{sup 14}, 2 × 10{sup 14}, 5 × 10{sup 14} ions/cm{sup 2}) on the structural, surface, magneto-optic and optical properties of ZnO thin films. The X-ray diffraction (XRD) results show improved crystallinity when ion fluence is increased to 2 × 10{sup 14} ions/cm{sup 2}, while deterioration is observed at the highest ion fluence of 5 × 10{sup 14} ions/cm{sup 2}. Scanning electron micrographs (SEM) show the formation of small grains at ion fluence 1 × 10{sup 13} ions/cm{sup 2}, micro-rods at fluences 1 × 10{sup 14} and 2 × 10{sup 14} ions/cm{sup 2} and ultimate fracturing of thin film surface at ion fluence 5 × 10{sup 14} ions/cm{sup 2}. Faraday rotation measurements are also performed and show a decrease in Verdet constant from 53 to 31 rad/(T-m) when irradiated at 1 × 10{sup 13} ions/cm{sup 2}, increasing up to 45 rad/(T-m) at 2 × 10{sup 14} ions/cm{sup 2}, and then decreasing again to 36 rad/(T-m) at 5 × 10{sup 14} ions/cm{sup 2}. The optical band gap energy of the films is determined using spectroscopic ellipsometry, which shows an increase in optical band gap energy (E{sub g}) from 3.04 eV to 3.19 eV when the fluence increases to 2 × 10{sup 14} ions/cm{sup 2} and a decrease to 3 eV at fluence 5 × 10{sup 14} ions/cm{sup 2}. We argue that these properties can be explained using ion heating effect of thin films.

  5. The structure and the gas sensitive properties of the thin films of zinc oxide

    Science.gov (United States)

    Zhilova, O. V.; Pankov, S. Yu.; Sitnikov, A. V.; Kalinin, Yu. E.; Babkina, I. V.

    2017-09-01

    The zinc oxide (ZnO) thin films were obtained by the ion-beam sputtering. It was shown that ZnO films have a hexagonal crystal structure of the space symmetry group P63mc. The film is slightly textured in the direction (0002). After the heat treatment, the crystal structure is preserved. A ZnO film with a thickness of 90 nm was annealed at a temperature of 600 °C. The relative change in the resistance of this film at a temperature of 400 °C after the addition of hydrogen to the air with a partial pressure of 5 Torr showed high values.

  6. Capacitive behavior of carbon nanotube thin film induced by deformed ZnO microspheres

    Science.gov (United States)

    Tripathi, Rahul; Naidu Majji, Shanmukh; Ghosh, Rituparna; Nandi, Sukanta; Boruah, Buddha D.; Misra, Abha

    2017-09-01

    Multiwalled carbon nanotubes (CNTs) are uniformly distributed with piezoelectric microspheres. This leads to a large strain gradient due to an induced capacitive response, providing a 250% enhancement in electromechanical response compared with pristine CNTs. The fabricated large-area flexible thin film exhibits excellent pressure sensitivity, which can even detect an arterial pulse with a much faster response time (˜79 ms) in a bendable configuration. In addition, the film shows a rapid relaxation time (˜0.4 s), high stability and excellent durability with a rapid loading-unloading cycle. The dominant contribution of piezoelectric microspheres in a CNT matrix as opposed to nanoparticles showed a much higher sensitivity due to the large change in capacitance. Therefore, hybrid microstructures have various potential applications in wearable smart electronics, including detection of human motion and wrist pulses.

  7. Crystalline silicon surface passivation by thermal ALD deposited Al doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Jagannath Panigrahi

    2017-03-01

    Full Text Available The evidence of good quality silicon surface passivation using thermal ALD deposited Al doped zinc oxide (AZO thin films is demonstrated. AZO films are prepared by introducing aluminium precursor in between zinc and oxygen precursors during the deposition. The formation of AZO is confirmed by ellipsometry, XRD and Hall measurements. Effective minority carrier lifetime (τeff greater than 1.5ms at intermediate bulk injection levels is realized for symmetrically passivated p-type silicon surfaces under optimised annealing conditions of temperature and time in hydrogen ambient. The best results are realised at 450°C annealing for >15min. Such a layer may lead to implied open circuit voltage gain of 80mV.

  8. Fabrication of the heterojunction diode from Y-doped ZnO thin films on p-Si substrates by sol-gel method

    Science.gov (United States)

    Sharma, Sanjeev K.; Singh, Satendra Pal; Kim, Deuk Young

    2018-02-01

    The heterojunction diode of yttrium-doped ZnO (YZO) thin films was fabricated on p-Si(100) substrates by sol-gel method. The post-annealing process was performed at 600 °C in vacuum for a short time (3 min) to prevent inter-diffusion of Zn, Y, and Si atoms. X-ray diffraction (XRD) pattern of as-grown and annealed (600 °C in vacuum) films showed the preferred orientation along the c-axis (002) regardless of dopant concentrations. The uniform surface microstructure and the absence of other metal/oxide peaks in XRD pattern confirmed the excellence of films. The increasing bandgap and carrier concentration of YZO thin films were interpreted by the BM shift, that is, the Fermi level moves towards the conduction band edge. The current-voltage characteristics of the heterojunction diode, In/n-ZnO/p-Si/Al, showed a rectification behavior. The turn-on voltage and ideality factor of n-ZnO/p-Si and n-YZO/p-Si were observed to be 3.47 V, 2.61 V, and 1.97, 1.89, respectively. Y-dopant in ZnO thin films provided more donor electrons caused the shifting of Fermi-energy level towards the conduction band and strengthen the interest for heterojunction diodes.

  9. Flexible, transparent, high dielectric and photoconductive thin films using ZnO nanosheets-multi-walled carbon nanotube-polymer nanocomposites

    Energy Technology Data Exchange (ETDEWEB)

    Hmar, J.J.L.; Majumder, T.; Roy, J.N.; Mondal, S.P., E-mail: suvra.phy@nita.ac.in

    2015-12-05

    ZnO nanosheet-Multi-Walled Carbon Nanotube (ZnO-MWCNT) nanostructures have been grown by a sol–gel chemical process. ZnO-MWCNT nanostructures were dispersed in polyvinyl alcohol (PVA) polymer solutions and spin coated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrates to fabricate a flexible, transparent, high dielectric and photoconductive thin film device. ZnO-MWCNT-PVA thin films demonstrated superior dielectric permittivity compare to ZnO-PVA and MWCNT-PVA nanocomposites. The dielectric permittivity and ac conductivity measurements of ITO/ZnO-MWCNT-PVA/Al devices have been carried out with different volume fraction of ZnO-MWCNT nanostructures. The photoconductive nature of ZnO-MWCNT-PVA composites has been investigated under illumination of broad band light source of intensity 80 mW/cm{sup 2}. The flexibility study of the nanocomposite devices have been performed at different bending angles. - Highlights: • ZnO nanosheet-Carbon Nanotube nanocomposites have been synthesized. • ZnO-CNTs were dispersed in polyvinyl alcohol solution to make thin film device. • Nanocomposite films showed high dielectric permittivity and photoconductivity. • Flexibility study of the devices was performed at different bending angles.

  10. Effects of Low Ag Doping on Physical and Optical Waveguide Properties of Highly Oriented Sol-Gel ZnO Thin Films

    Directory of Open Access Journals (Sweden)

    Mohamed Dehimi

    2015-01-01

    Full Text Available A sol-gel dip-coating process was used to deposit almost stress-free highly c-axis oriented zinc oxide (ZnO thin films onto glass substrates. The effects of low silver doping concentration (Ag/Zn < 1% on the structural, morphological, optical, and waveguide properties of such films were investigated by X-ray diffraction (XRD, scanning electron microscopy (SEM, atomic force microscopy, UV-Visible spectrophotometry, and M-lines spectroscopy (MLS. XRD analysis revealed that all the films were in single phase and had a hexagonal wurtzite structure. The grain size values were calculated and found to be about 24–29 nm. SEM micrographs and AFM images have shown that film morphology and surface roughness were influenced by Ag doping concentration. According to UV-Vis. measurements all the films were highly transparent with average visible transmission values ranging from 80% to 86%. It was found that the Ag contents lead to widening of the band gap. MLS measurements at 632.8 nm wavelength put into evidence that all thin film planar waveguides demonstrate a well-guided fundamental mode for both transverse electric and transverse magnetic polarized light. Moreover, the refractive index of ZnO thin films was found to increase by Ag doping levels.

  11. Influence of Codoping on the Optical Properties of ZnO Thin Films Synthesized on Glass Substrate by Chemical Bath Deposition Method

    Directory of Open Access Journals (Sweden)

    G. Shanmuganathan

    2014-01-01

    Full Text Available Fe and K simultaneously doped ZnO thin films Zn0.99 K0.01 (Fex O (x=1, 2, 3, and 4% were synthesized by chemical bath deposition method. The XRD investigation reveals that all the doped ZnO thin films are in hexagonal wurtzite crystal structure without impurity phases. With increase in Fe concentration, the growth of thin films along c axis is evident from the XRD which indicates the increase in intensity along (002 direction. The same is visible from the surface morphology which shows the formation of hexagonal structure for higher Fe concentration. The topography shows gradual variation with Fe incorporation. The optical energy band gap obtained from the transmittance spectrum decreases from 3.42 to 3.06 eV with increase in Fe concentration indicating the red shift and this trend is consistent with the earlier experimental results. The UV emission is centered around 3.59 eV. The optical constants such as refractive index, extinction coefficient, and absorption coefficient which are essential for the optoelectronic applications were also determined.

  12. Optical and Electrical Properties of the Different Magnetron Sputter Power 300°C Deposited -ZnO Thin Films and Applications in p-i-n -Si:H Thin-Film Solar Cells

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2013-01-01

    Full Text Available A compound of ZnO with 3 wt% Ga2O3 (ZnO : Ga2O3 = 97 : 3 in wt%, GZO was sintered at C as a target. The GZO thin films were deposited on glass using a radio frequency magnetron sputtering system at C by changing the deposition power from 50 W to 150 W. The effects of deposition power on the crystallization size, lattice constant (c, resistivity, carrier concentration, carrier mobility, and optical transmission rate of the GZO thin films were studied. The blue shift in the transmission spectrum of the GZO thin films was found to change with the variations of the carrier concentration because of the Burstein-Moss shifting effect. The variations in the optical band gap ( value of the GZO thin films were evaluated from the plots of , revealing that the measured value decreased with increasing deposition power. As compared with the results deposited at room temperature by Gong et al., (2010 the C deposited GZO thin films had apparent blue shift in the transmission spectrum and larger value. For the deposited GZO thin films, both the carrier concentration and mobility linearly decreased and the resistivity linearly increased with increasing deposition power. The prepared GZO thin films were also used as transparent electrodes to fabricate the amorphous silicon thin-film solar cells, and their properties were also measured.

  13. Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

    Science.gov (United States)

    Muslih, E. Y.; Kim, K. H.

    2017-07-01

    Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

  14. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    KAUST Repository

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  15. Correlations between 1/f noise and thermal treatment of Al-doped ZnO thin films deposited by direct current sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Barhoumi, A., E-mail: amira-barhoumi@yahoo.fr; Guermazi, S. [University of Sfax, Research Unit: PMISI, Faculty of Science Sfax, Route de la Soukra Km 3.5-B.P. n° 1171-3000 Sfax (Tunisia); Leroy, G.; Gest, J.; Carru, J. C. [University Lille North of France, ULCO, UDSMM, 62228 Calais (France); Yang, L. [Hebei Union University, Electrical Engineering, 46 Xinhua Road, Tangshan 063009, Hebei (China); Boughzala, H. [University of Tunis El-Manar, Faculty of Science Tunis,, Laboratory of Crystallochemistry, 1060 Tunis (Tunisia); Duponchel, B. [University Lille North of France, ULCO, UDSMM, 59140 Dunkerque (France)

    2014-05-28

    Al-doped ZnO thin films (AZO) have been deposited on amorphous glass substrates by DC sputtering at different substrate temperatures T{sub s}. X-Ray diffraction results reveal that AZO thin films have a hexagonal wurtzite structure with (002) preferred orientation. (002) peaks indicate that the crystalline structure of the films is oriented with c-axis perpendicular to the substrate. Three-dimensional (3D) atomic force microscopy images of AZO thin films deposited on glass substrate at 200 °C, 300 °C, and 400 °C, respectively, shows the improvement of the crystallinity and the homogeneity of AZO thin films with T{sub s} which is in agreement with the noise measurements. The noise was characterized between 1 Hz and 100 kHz and we have obtained 1/f spectra. The noise is very sensitive to the crystal structure especially to the orientation of the crystallites which is perpendicular to the substrate and to the grain boundaries which generate a high current flow and a sharp increase in noise. Through time, R{sub sh} and [αμ]{sub eff} increase with the modification of the crystallinity of AZO thin films. Study of noise aging shows that the noise is more sensitive than resistivity for all AZO thin films.

  16. Study of an antireflection surface constructed of controlled ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Ren-Jei, E-mail: rjchung@ntut.edu.tw [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology (Taipei Tech), Taipei 10608, Taiwan, ROC (China); Lin, Zih-Cian [Department of Chemical Engineering and Biotechnology, National Taipei University of Technology (Taipei Tech), Taipei 10608, Taiwan, ROC (China); Lin, Chin-An; Lai, Kun-Yu [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan, ROC (China); Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan, ROC (China)

    2014-11-03

    Zinc oxide (ZnO) nanostructures were fabricated on Si wafers using a hydrothermal method. By adjusting the spin-coating speed and annealing time for the zinc acetate thin films used as a seed layer, the density of ZnO nanorods (NRs) was controlled. In addition, it was found that the morphology of the NRs evolved from a wire-like geometry to a tower-like geometry with an increasing concentration of ascorbic acid. The surface reflectance of the ZnO NR layers with various textures was investigated. The results indicated that NRs effectively enhanced light trapping and further reduced Fresnel reflection due to the significant grading in the refractive index, avoiding the abrupt transition at the air/Si interface. The total reflectance on the coated surface can be as low as 11%, which is 3 times lower than that of polished Si. The optimized design of nanostructured ZnO surfaces for antireflection coatings will greatly improve the performance of optoelectronic devices. - Highlights: • Nanotructured ZnO was prepared to serve as an anti-reflection coating. • The geometries of sol–gel prepared ZnO were controlled. • ZnO nanorod, nanoneedle and nanotower arrays were fabricated. • The light reflectance of the nanostructures was much lower than that of bare Si.

  17. Effect of bath temperature on the performance of ZnO nanorod-based thin film solar cells

    Science.gov (United States)

    Senthil, T. S.; Kim, A.-Young; Muthukumarasamy, N.; Kang, Misook

    2013-09-01

    Almost vertically aligned ZnO nanorods have been grown on indium-doped tin oxide substrates via a simple hydrothermal method at various bath temperatures. After being sensitized by N3 dye, three kinds of nanorod photoanodes were used for assembling dye-sensitized solar cells. The photovoltaic performance of the cell was found to be strongly dependent on the bath temperature used to synthesize the ZnO nanorods. A comparative study shows that ZnO nanorods prepared at lower bath temperature adsorb maximum dye molecules ( 9.8 × 10-8 mol/cm2) and could effectively retard charge recombination and achieve longer electron life time. As a result, the DSSCs fabricated using ZnO nanorods prepared at lower bath temperature exhibit better performance than those prepared at higher bath temperatures.

  18. Effect of bath temperature on the performance of ZnO nanorod-based thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Senthil, T. S., E-mail: tssenthi@gmail.com; Kim, A-Young [Yeungnam University, Department of Chemistry (Korea, Republic of); Muthukumarasamy, N. [Coimbatore Institute of Technology, Department of Physics (India); Kang, Misook, E-mail: mskang@ynu.ac.kr [Yeungnam University, Department of Chemistry (Korea, Republic of)

    2013-09-15

    Almost vertically aligned ZnO nanorods have been grown on indium-doped tin oxide substrates via a simple hydrothermal method at various bath temperatures. After being sensitized by N3 dye, three kinds of nanorod photoanodes were used for assembling dye-sensitized solar cells. The photovoltaic performance of the cell was found to be strongly dependent on the bath temperature used to synthesize the ZnO nanorods. A comparative study shows that ZnO nanorods prepared at lower bath temperature adsorb maximum dye molecules ({approx}9.8 Multiplication-Sign 10{sup -8} mol/cm{sup 2}) and could effectively retard charge recombination and achieve longer electron life time. As a result, the DSSCs fabricated using ZnO nanorods prepared at lower bath temperature exhibit better performance than those prepared at higher bath temperatures.

  19. Study of working pressure on the optoelectrical properties of Al–Y codoped ZnO thin-film deposited using DC magnetron sputtering for solar cell applications

    Energy Technology Data Exchange (ETDEWEB)

    Hsu, Feng-Hao [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China); Wang, Na-Fu; Tsai, Yu-Zen; Chuang, Ming-Chieh; Cheng, Yu-Song [Department of Electronic Engineering, Cheng Shiu University, 840 Chengcing Road, Niaosong District, Kaohsiung City 833, Taiwan (China); Houng, Mau-Phon, E-mail: mphoung@eembox.ncku.edu.tw [Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, No. 1, Dasyue Road, East District, Tainan City 701, Taiwan (China)

    2013-09-01

    Low cost transparent conductive Al–Y codoped ZnO (AZOY) thin-films were prepared on a glass substrate using a DC magnetron sputtering technique with various working pressures in the range of 5–13 mTorr. The relationship among the structural, electrical, and optical properties of sputtered AZOY films was studied as a function of working pressure. The XRD measurements show that the crystallinity of the films degraded as the working gas pressure increased. The AZOY thin-film deposited at a working pressure of 5 mTorr exhibited the lowest electrical resistivity of 4.3 × 10{sup −4} Ω cm, carrier mobility of 30 cm{sup 2}/V s, highest carrier concentration of 4.9 × 10{sup 20} cm{sup −3}, and high transmittance in the visible region (400–800 nm) of approximately 90%. Compared with Al doped ZnO (AZO) thin-films deposited using DC or RF magnetron sputtering methods, a high carrier mobility was observed in our AZOY thin-films. This result can be used to effectively decrease the absorption of near infrared-rays in solar cell applications. The mechanisms are attributed to the larger transition energy between Ar atoms and sputtering particles and the size compensation of the dopants. Finally, the optimal quality AZOY thin-film was used as an emitter layer (or window layer) to form AZOY/n-Si heterojunction solar cells, which exhibited a stable conversion efficiency (η) of 9.4% under an AM1.5 illumination condition.

  20. Gravimetric sensors operating at 1.1 GHz based on inclined c-axis ZnO grown on textured Al electrodes.

    Science.gov (United States)

    Rughoobur, Girish; DeMiguel-Ramos, Mario; Escolano, José-Miguel; Iborra, Enrique; Flewitt, Andrew John

    2017-05-02

    Shear mode solidly mounted resonators (SMRs) are fabricated using an inclined c-axis ZnO grown on a rough Al electrode. The roughness of the Al surface is controlled by changing the substrate temperature during the deposition process to promote the growth of inclined ZnO microcrystals. The optimum substrate temperature to obtain homogeneously inclined c-axis grains in ZnO films is achieved by depositing Al at 100 °C with a surface roughness ~9.2 nm, which caused an inclination angle of ~25° of the ZnO c-axis with respect to the surface normal. Shear mode devices with quality-factors at resonance, Q r and effective electromechanical coupling factors, [Formula: see text], as high as 180 and 3.4% are respectively measured. Mass sensitivities, S m of (4.9 ± 0.1) kHz · cm 2 /ng and temperature coefficient of frequency (TCF) of ~-67 ppm/K are obtained using this shear mode. The performance of the devices as viscosity sensors and biosensors is demonstrated by determining the frequency shifts of water-ethanol mixtures and detection of Rabbit immunoglobin G (IgG) whole molecule (H&L) respectively.

  1. Wide-spectrum Mg and Ga co-doped ZnO TCO thin films for solar cells grown via magnetron sputtering with H{sub 2} introduction

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Xin-liang, E-mail: cxlruzhou@163.com [Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 (China); Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 (China); Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071 (China); Liu, Jie-ming; Ni, Jian; Zhao, Ying; Zhang, Xiao-dan [Institute of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 (China); Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071 (China); Key Laboratory of Opto-electronic Information Science and Technology for Ministry of Education, Nankai University, Tianjin 300071 (China)

    2015-02-15

    Highlights: • Hydrogenated Mg and Ga co-doped ZnO thin films are obtained. • Low resistivity and high optical transmittances in wide spectrum range are achieved. • Solar cells with HMGZO layer present higher quantum efficiency. - Abstract: Wide-spectrum Mg and Ga co-doped ZnO transparent conductive oxide (TCO) thin films are deposited via magnetron sputtering at various H{sub 2} flow rates on glass substrates. The structural, electrical, and optical properties of MGZO thin films are investigated with different H{sub 2} flow rates. The experiment results show that the MGZO thin films are polycrystalline with a hexagonal wurtzite structure exhibiting a preferred (0 0 2) crystal plane orientation. The carrier concentration remarkably increases from 5.15 × 10{sup 19} cm{sup −3} to 2.12 × 10{sup 20} cm{sup −3} with increasing the H{sub 2} flow rate from 0 sccm to 4.0 sccm and then decreases when further increasing the H{sub 2} flow rate. The glass/MGZO thin film deposited at the H{sub 2} flow rate of 4.0 sccm exhibits the lowest resistivity of 1.96 × 10{sup −3} Ω cm (film thickness d ∼ 548 nm) and an average transmittance (Ta) of 80.5% in the wavelength range from 340 nm to 1100 nm. Optical measurements indicate that the optical band gap (E{sub g}) of MGZO thin films varies from 3.45 eV to 3.78 eV with adjusting H{sub 2} flow rate from 0 sccm to 12.0 sccm. The obtained MGZO thin films with an appropriate thickness are preliminarily applied in p–i–n type hydrogenated amorphous silicon (a-Si:H) thin film solar cells. The a-Si:H solar cell with MGZO layer presents higher quantum efficiency in the short wavelength region than that with GZO layer, resulting from widened optical band gap.

  2. High Performance Flexible Actuator of Urchin-Like ZnO Nanostructure/Polyvinylenefluoride Hybrid Thin Film with Graphene Electrodes for Acoustic Generator and Analyzer.

    Science.gov (United States)

    Cheong, Oug Jae; Lee, James S; Kim, Jae Hyun; Jang, Jyongsik

    2016-05-01

    A bass frequency response enhanced flexible polyvinylidene fluoride (PVDF) based thin film acoustic actuator is successfully fabricated. High concentrations of various zinc oxide (ZnO) is embedded in PVDF matrix, enhancing the β phase content and the dielectric property of the composite thin film. ZnO acts as a nucleation agent for the crystallization of PVDF. A chemical vapor deposition grown graphene is used as electrodes, enabling high electron mobility for the distortion free acoustic signals. The frequency response of the fabricated acoustic actuator is studied as a function of the film thickness and filler content. The optimized film has a thickness of 80 μm with 30 wt% filler content and shows 72% and 42% frequency response enhancement in bass and midrange compared to the commercial PVDF, respectively. Also, the total harmonic distortion decreases to 82% and 74% in the bass and midrange regions, respectively. Furthermore, the composite film shows a promising potential for microphone applications. Most of all, it is demonstrated that acoustic actuator performance is strongly influenced by degree of PVDF crystalline. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Cu ions induced reorientation of crystallite in ZnO nano/micro rod arrays thin films

    Science.gov (United States)

    Soundarrajan, P.; Sankarasubramanian, K.; Sampath, M.; Logu, T.; Sethuraman, K.; Ramamurthi, K.

    2015-07-01

    Undoped and Cu doped ZnO nano/microrod arrays (N/MRAs) films were grown on seeded glass substrates by chemical bath deposition technique. The structural and morphological characterizations (X-ray diffraction and scanning electron microscopy) clearly illustrate that the pure ZnO N/MRAs has well-defined hexagonal prismatic cross-sectional crystallographic facets and its crystallographic plane is more vertically grown along (002) crystallographic direction. The horizontally aligned (100) crystallographic plane is induced at 20% Cu doping level. Morphological structure of ZnO N/MRAs changed into nanoplates/microballs with increasing of Cu doping level. Hexagonal crystal structure of undoped and Cu doped ZnO N/MRAs is then confirmed by μ-Raman scattering. Energy band gaps are found to be decreased with Cu doping and reached a minimum of 3.04 eV when doping level is 20%. The defect related peak intensity is suppressed in ZnO N/MRAs by Cu doping.

  4. Low temperature deposition of ZnO semiconductor thin films on a PEN substrate by a solution process

    Science.gov (United States)

    Tsay, Chien-Yie; Wu, Pei-Wen

    2013-07-01

    Low-temperature processed ZnO semiconductor films were deposited onto polyethylene naphthalate (PEN) plastic substrates by a spin coating technique using ZnO nanoparticle (NP) dispersion. The ZnO nanoparticles (NPs) were synthesized by the hydrothermal method, and solution processable dispersion was used to disperse the ZnO NPs in a mixed aqueous solution with a polyvinylpyrrolidone (PVP) dispersant agent. The effects of annealing temperature (from 150°C to 250°C) on the electrical properties of glass/ZnO film samples are reported. The optimized annealing condition (200°C) was applied for ZnO film deposited on a PEN substrate. Comparative electrical properties of the PEN/ZnO film samples before and after bending tests are also presented. Experimental results show that the electrical resistivity of the PEN/ZnO film sample was 1.91 × 104 Ω cm with a Hall mobility of 45.9 cm2/Vs. After bending tests, the electrical resistivity was raised to 1.26 × 105 Ω cm and the Hall mobility was reduced to 31.0 cm2/Vs.

  5. Enhanced output voltage generation via ZnO nanowires (50 nm): Effect of diameter thinning on voltage enhancement

    Science.gov (United States)

    Ahmad, Mansoor; Iqbal, Muhammad Azhar; Kiely, Janice; Luxton, Richard; Jabeen, Musarrat

    2017-05-01

    50 nm ZnO nanowires were grown on indium tin oxide (ITO) coated poly ethylene terephthalate (PET) substrates by adapting facile aqueous growth technique using low temperature and vacuum conditions. Prior to growth of ZnO nanowires, pure hexagonal wurtzite structured seed layer was grown on flexible substrates. Surface morphology of nanostructure has been examined by scanning electron microscopy (SEM). Vertical growth orientation has been evidenced in XRD patterns. Minute external mechanical force ( 50 nN) has produced periodic voltage peaks. 2.5 nm and 7.5 nm thick sputtered Pt electrode have been tested to obtain output voltages. 50 nm ZnO nanowires has produced a maximum output voltage of 2.717 volts having an output power density of 397.1 mW/cm2. By squeezing the diameter, we have reduced reverse leakage current through nanowires and enhanced output voltage.

  6. Dye-sensitized solar cell based on spray deposited ZnO thin film: performance analysis through DFT approach.

    Science.gov (United States)

    Parthiban, R; Balamurugan, D; Jeyaprakash, B G

    2015-02-05

    A dye-sensitized solar cell based on a spray deposited zinc oxide (ZnO) photoanode with Evans blue as a sensitizer was fabricated. Structural analysis confirms the hexagonal wurtzite phase of the ZnO photoanode with c-axis orientation. Surface morphology of the ZnO photoanode shows uniform distribution of spherically-shaped grains, ranging from 18 nm to 25 nm. The power conversion efficiency of the device was measured as 0.1%. Density functional theory was adopted to study the observed photovoltaic performance of the fabricated device. The analysis of the electronic properties of Evans blue dye showed that it has a pronounced effect on the observed device performance. Copyright © 2014 Elsevier B.V. All rights reserved.

  7. Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

    NARCIS (Netherlands)

    Deelen, J. van; Omar, A.; Barink, M.

    2017-01-01

    The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our

  8. ZnO and Al doped ZnO thin films deposited by Spray Plasma: Effect of the growth time and Al doping on microstructural, optical and electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Baba, Kamal [LSPM-CNRS, Laboratoire des Sciences des Procédés et des Matériaux (UPR 3407), Université Paris 13 Sorbonne Paris Cité, 93430 Villetaneuse (France); Luxembourg Institute of Science and Technology, Materials Research and Technology Department, L-4362 Esch-sur-Alzette (Luxembourg); Lazzaroni, Claudia [LSPM-CNRS, Laboratoire des Sciences des Procédés et des Matériaux (UPR 3407), Université Paris 13 Sorbonne Paris Cité, 93430 Villetaneuse (France); Nikravech, Mehrdad, E-mail: mehrdad.nikravech@lspm.cnrs.fr [LSPM-CNRS, Laboratoire des Sciences des Procédés et des Matériaux (UPR 3407), Université Paris 13 Sorbonne Paris Cité, 93430 Villetaneuse (France)

    2015-11-30

    Nanostructured zinc oxide (ZnO) and Al doped ZnO (ZnO:Al) thin films are deposited on glass substrate by the Spray Plasma technique. Zinc nitrate and aluminium nitrate are used as Zn and Al precursors, respectively. The effect of the growth time on structural and optical properties of undoped films is studied by X-ray diffraction, atomic force microscopy, and UV–Vis spectroscopy. The effect of Al doping on microstructural, optical and electrical characteristics of ZnO:Al films is also investigated. The results show that the grain size and the film thickness both increase with the growth time. The band gap of the layers varies from 3.17 to 3.24 eV depending on the thickness. The increase of the Al doping results in the enlargement of the peak (002) and the shift of its position to higher 2θ values. Average optical transmittance decreases from 90 to 65% with the growth time because of the thickness increase while there is no significant influence of the aluminium doping on the transmittance which is above 80% in most of the visible and near-IR range for all ZnO:Al films. The electrical properties characterized by Hall measurements show that all the deposited films exhibit high resistivity, between 4 and 10{sup 4} Ω cm. The carrier concentration decreases from 2.10{sup 19} to 2.10{sup 13} cm{sup −3} when the concentration of Al increases from 1.5 to 5 atm%. - Highlights: • The original Spray Plasma technique is used for ZnO and ZnO:Al thin film deposition. • Investigation of the effect of growth time and Al doping on the structural and optical properties • Increase of grain size and film thickness with the growth time • Optical transmittance decreases from 90 to 65% with the growth time and is above 80% for ZnO:Al films in UV–Vis-NIR range. • The peak position of the (002) plane is shifted to high 2θ values with Al doping.

  9. Length Scale Dependence of Periodic Textures for Photoabsorption Enhancement in Ultra-thin Silicon Foils and Thick Wafers

    CERN Document Server

    Kumar, K; Liu, G; Nogami, J; Kherani, N P

    2016-01-01

    In this paper, we simulate a front surface inverted pyramidal grating texture on 2 to 400 micron thick silicon and optimize it to derive maximum photocurrent density from the cell. We identify a one size fits all front grating period of 1000 nm that leads to maximum photo-absorption of normally incident AM1.5g solar spectrum in silicon (configured with a back surface reflector) irrespective of the thickness of the crystalline silicon absorbing layer. With the identification of such universally optimized periodicity for the case of an inverted pyramidal grating texture, a common fabrication process can be designed to manufacture high-efficiency devices on crystalline silicon regardless of wafer thickness. In order to validate the results of the simulation, we fabricated high resolution inverted pyramidal textures on a 400 micron thick silicon wafer with electron beam lithography to compare the reflectance from submicron and wavelength scale periodic textures. The experimental reflectance measurements on textur...

  10. Phase and Texture of Solution-Processed Copper Phthalocyanine Thin Films Investigated by Two-Dimensional Grazing Incidence X-Ray Diffraction

    Directory of Open Access Journals (Sweden)

    Lulu Deng

    2011-07-01

    Full Text Available The phase and texture of a newly developed solution-processed copper phthalocyanine (CuPc thin film have been investigated by two-dimensional grazing incidence X-ray diffraction. The results show that it has β phase crystalline structure, with crystallinity greater than 80%. The average size of the crystallites is found to be about 24 nm. There are two different arrangements of crystallites, with one dominating the diffraction pattern. Both of them have preferred orientation along the thin film normal. Based on the similarities to the vacuum deposited CuPc thin films, the new solution processing method is verified to offer a good alternative to vacuum process, for the fabrication of low cost small molecule based organic photovoltaics.

  11. Transparent Conductive Oxides in Thin Film Photovoltaics

    Science.gov (United States)

    Hamelmann, Frank U.

    2014-11-01

    This paper show results from the development of transparent conductive oxides (TCO's) on large areas for the use as front electrode in thin film silicon solar modules. It is focused on two types of zinc oxide, which are cheap to produce and scalable to a substrate size up to 6 m2. Low pressure CVD with temperatures below 200°C can be used for the deposition of boron doped ZnO with a native surface texture for good light scattering, while sputtered aluminum doped ZnO needs a post deposition treatment in an acid bath for a rough surface. The paper presents optical and electrical characterization of large area samples, and also results about long term stability of the ZnO samples with respect to the so called TCO corrosion.

  12. Influence of film thickness and annealing temperature on the structural and optical properties of ZnO thin films on Si (1 0 0) substrates grown by atomic layer deposition

    Science.gov (United States)

    Tian, Ji-Li; Zhang, Hua-Yu; Wang, Gui-Gen; Wang, Xin-Zhong; Sun, Rui; Jin, Lei; Han, Jie-Cai

    2015-07-01

    In this paper, ZnO thin films with different thicknesses grown on Si (1 0 0) substrates by atomic layer deposition (ALD) method were annealed in nitrogen at the temperatures ranging from 200 to 900 °C. The influences of film thickness and annealing temperature on the structural and optical properties of the ZnO films were systematically investigated by XRD, SEM and RT-PL. All the ALD-ZnO thin films show polycrystalline hexagonal wurtzite structure and a high preferential c-axis orientation. The results show that the crystallinity quality and luminescence performance are both improved by increasing the film thickness. In addition, the loss of oxygen which results in the formation of oxygen vacancies (VO) is the main reason for the green emission dominating visible band of annealed ZnO thin films. The visible band is dominated by different kinds of defects including oxygen vacancies (VO and VO+), and interstitial oxygen (IO) with increasing annealing temperature. High-quality ZnO thin films with good luminescence performance can be obtained for the films annealed at 800 °C in nitrogen.

  13. Enhanced Light Scattering by Preferred Orientation Control of Ga Doped ZnO Films Prepared through MOCVD

    Directory of Open Access Journals (Sweden)

    Long Giang Bach

    2016-01-01

    Full Text Available We have explored the effective approach to fabricate GZO/ZnO films that can make the pyramidal surface structures of GZO films for effective light scattering by employing a low temperature ZnO buffer layer prior to high temperature GZO film growth. The GZO thin films exhibit the typical preferred growth orientations along the (002 crystallographic direction at deposition temperature of 400°C and SEM showed that column-like granule structure with planar surface was formed. In contrast, GZO films with a pyramidal texture surface were successfully developed by the control of (110 preferred orientation. We found that the light diffuse transmittance of the film with a GZO (800 nm/ZnO (766 nm exhibited 13% increase at 420 nm wavelength due to the formed large grain size of the pyramidal texture surface. Thus, the obtained GZO films deposited over ZnO buffer layer have high potential for use as front TCO layers in Si-based thin film solar cells. These results could develop the potential way to fabricate TCO based ZnO thin film using MOCVD or sputtering techniques by depositing a low temperature ZnO layer to serve as a template for high temperature GZO film growth. The GZO films exhibited satisfactory optoelectric properties.

  14. Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Yung-Chun Tu

    2015-01-01

    Full Text Available Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ ultraviolet photodetectors (UV-PDs. The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film. The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm under UV light (365 nm; intensity: 3 mW/cm2 were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG and 8.8-fold (Ssputter, respectively. The significant gain in sensitivity (SHTG/Ssputter = 630% of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

  15. Dislocation density and Burgers vector population in fiber-textured Ni thin films determined by high-resolution X-ray line profile analysis

    DEFF Research Database (Denmark)

    Csiszár, Gábor; Pantleon, Karen; Alimadadi, Hossein

    2012-01-01

    Nanocrystalline Ni thin films have been produced by direct current electrodeposition with different additives and current density in order to obtain 〈100〉, 〈111〉 and 〈211〉 major fiber textures. The dislocation density, the Burgers vector population and the coherently scattering domain size...... distribution are determined by high-resolution X-ray diffraction line profile analysis. The substructure parameters are correlated with the strength of the films by using the combined Taylor and Hall-Petch relations. The convolutional multiple whole profile method is used to obtain the substructure parameters...... in the different coexisting texture components. A strong variation of the dislocation density is observed as a function of the deposition conditions....

  16. Growth of TiO2 thin films on chemically textured Si for solar cell applications as a hole-blocking and antireflection layer

    Science.gov (United States)

    Singh, Ranveer; Kumar, Mohit; Saini, Mahesh; Singh, Avanendra; Satpati, Biswarup; Som, Tapobrata

    2017-10-01

    In this work, we investigate the broad-band photoabsorption of an n-TiO2 thin film and its hole-blocking properties when a heterostructure is grown on a chemically textured p-Si substrate. We demonstrate that average specular reflectance of conformally grown TiO2 thin films on chemically prepared pyramidally textured Si substrates can be brought down to ∼0.2% (in the wavelength range of 300-1200 nm), which increases up to ∼0.53% after annealing at 673 K in air for 1 h. X-ray diffraction data reveal the amorphous nature of as-grown TiO2 thin films which undergoes a transition to a crystalline one after annealing. In addition, bulk current-voltage characteristics show that the leakage current increases after annealing which corroborates well a with change in the band gap, as is measured from the optical absorption spectra, due to a transition from amorphous to crystalline (anatase phase) of TiO2. Moreover, TiO2/Si heterojunction allows the transport of electrons but blocks the transport of holes. The present results are not only important for the fundamental understanding of the charge transport across TiO2/Si heterostructures but also to design hole-blocking solar cells.

  17. High-performance FeSe0.5Te0.5 thin films fabricated on less-well-textured flexible coated conductor templates

    Science.gov (United States)

    Xu, Zhongtang; Yuan, Pusheng; Ma, Yanwei; Cai, Chuanbing

    2017-03-01

    We report on the transport properties of FeSe0.5Te0.5 (FST) thin films fabricated on less-well-textured flexible coated conductor templates with LaMnO3 (LMO) as buffer layers using pulsed laser deposition. The LMO buffer layers exhibit large in-plane misalignment of ˜7.72°, which is unfavorable for cuprate-coated conductors due to the high grain boundaries. The FST thin films show a superconducting transition temperature of 16.8 K, higher than that of bulk materials due to the compressive strain between LMO and FST. Atomic force microscopy observations reveal that island-like features appear at the surfaces of both LMO and FST, confirming the island growth mode. A self-field transport critical-current density of up to 0.43 MA cm-2 at 4.2 K has been observed in FST thin films, which is much higher than that in powder-in-tube processed FST tapes. The films are capable of carrying current densities of over 105 A cm-2 in the whole applied magnetic field up to 9 T, showing great potential for high-field applications. The results indicate that, for FST, highly textured metal tapes are not needed to produce coated conductors with high performance, which is of great advantage over cuprate-coated conductors.

  18. Physical and photo-electrochemical characterizations of ZnO thin films deposited by ultrasonic spray method: Application to HCrO4- photoreduction

    Science.gov (United States)

    Zebbar, N.; Trari, M.; Doulache, M.; Boughelout, A.; Chabane, L.

    2014-02-01

    ZnO thin films, prepared by ultrasonic spray onto glass substrate, crystallize in the wurtzite structure. The XRD pattern shows preferential orientation along the [0 0 2] direction. The films deposited at 350 °C consist of 60 nm crystallites with an average thickness of ∼150 nm and SEM images show rough surface areas. The gap increases with increasing the temperature of the substrate and a value of 3.25 eV is obtained for films deposited at 350 °C. ZnO is nominally non-stochiometric and exhibits n-type conduction because of the native defects such as oxygen vacancies (VO) and/or interstitial zinc atom (Zni) which act as donor shallows. The conductivity is thermally activated and obeys to an exponential type law with activation energy of 57 meV and an electron mobility of 7 cm2 V-1 s-1. The capacitance-voltage (C-2 V) measurement in acid electrolyte (pH ∼ 3) shows a linear behavior with a positive slope, characteristic of n-type conduction. A flat band potential of -0.70 VSCE and a donors density of 5.30 × 1016 cm-3 are determined. The Nyquist plot exhibits two semicircles attributed to a capacitive behavior with a low density of surface states within the gap region. The centre is localized below the real axis with a depletion angle of 16° ascribed to a constant phase element (CPE) due to the roughness of the film. The energy band diagram assesses the potentiality of ZnO films for the photo-electrochemical conversion. As application, 94% of chromate (3.8 × 10-4 M) is reduced after 6 h under sunlight (AM 1) with a quantum yield of 0.06% and the oxidation follows a first order kinetic.

  19. Influence of film thickness and oxygen partial pressure on cation-defect-induced intrinsic ferromagnetic behavior in luminescent p-type Na-doped ZnO thin films.

    Science.gov (United States)

    Ghosh, S; Khan, Gobinda Gopal; Varma, Shikha; Mandal, K

    2013-04-10

    In this article, we have investigated the effect of oxygen partial pressure (PO2) and film thickness on defect-induced room-temperature (RT) ferromagnetism (FM) of highly c-axis orientated p-type Na-doped ZnO thin films fabricated by pulse laser deposition (PLD) technique. We have found that the substitution of Na at Zn site (NaZn) can be effective to stabilize intrinsic ferromagnetic (FM) ordering in ZnO thin films with Curie temperature (TC) as high as 509 K. The saturation magnetization (MS) is found to decrease gradually with the increase in thickness of the films, whereas an increase in "MS" is observed with the increase in PO2 of the PLD chamber. The enhancement of ferromagnetic signature with increasing PO2 excludes the possibility of oxygen vacancy (VO) defects for the magnetic origin in Na-doped ZnO films. On the other hand, remarkable enhancement in the green emission (IG) are observed in the photoluminescence (PL) spectroscopic measurements due to Na-doping and that indicates the stabilization of considerable amount of Zn vacancy (VZn)-type defects in Na-doped ZnO films. Correlating the results of PL and X-ray photoelectron spectroscopy (XPS) studies with magnetic measurements we have found that VZn and Na substitutional (NaZn) defects are responsible for the hole-mediated FM in Na-doped ZnO films, which might be an effective candidate for modern spintronic technology.

  20. Multi-directional self-ion irradiation of thin gold films: A new strategy for achieving full texture control

    Energy Technology Data Exchange (ETDEWEB)

    Seita, Matteo; Muff, Daniel [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland); Spolenak, Ralph, E-mail: ralph.spolenak@mat.ethz.ch [Laboratory for Nanometallurgy, Department of Materials, ETH Zurich, Wolfgang-Pauli-Str. 10, 8093 Zurich (Switzerland)

    2011-08-15

    Highlights: {yields} Multi-directional self-ion bombardment of Au films. {yields} Extensive selective grain growth leads to single crystal-like films. {yields} Texture rotation is prevented by the multi-directional irradiation process. {yields} Texture rotation rate depends on the film initial defect density. - Abstract: Post-deposition ion bombardment can be employed to convert polycrystalline films into single crystals through a process of selective grain growth. Here we report a new technique that enables selective grain growth in self-ion bombarded gold films - a system in which the formation of large single crystal domains was prevented by the occurrence of ion-induced texture rotation. Our findings suggest that the extent of the texture rotation is a function of the ion fluence and the film initial microstructure.

  1. Structural properties of ZnO layers deposited on glass substrates by PECVD

    Science.gov (United States)

    Kitova, S.; Kazakov, R.; Danev, G.

    2012-03-01

    Thin ZnO layers were grown by metal-organic plasma-enhanced CVD (RF - 13.56 MHz) on glass substrates without and with ZnO seed film. The properties of the ZnO layers obtained were studied in dependence of the partial oxygen pressure by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The results obtained show that by controlling the partial oxygen pressure during the layer growth one can control the crystallinity and texture of the layers obtained on pure glass substrates. It was found that ZnO layers deposited at low O2 pressure have well-developed grain structures with a predominant c-axis phase and better crystalline quality than that of the samples obtained at high partial oxygen pressure. In the presence of ZnO seed films, the formation of c-axis phase and its quality are less dependent on partial PO2. Nanorods with good alignment and orientated vertically with respect to the substrate surface can be observed in the layers deposited on glass substrates with ZnO seeds and substrate temperature of 400 °C at low content of O2 in the plasma. This behavior is interpreted in the framework of the so-called preferential nucleation and preferential grain growth.

  2. Optical Design of Textured Thin-Film CIGS Solar Cells with Nearly-Invisible Nanowire Assisted Front Contacts

    Directory of Open Access Journals (Sweden)

    Joop van Deelen

    2017-04-01

    Full Text Available The conductivity of transparent front contacts can be improved by patterned metallic nanowires, albeit at the cost of optical loss. The associated optical penalty can be strongly reduced by texturization of the cell stack. Remarkably, the nanowires themselves are not textured and not covered in our design. This was shown by optical modeling where the width of the nanowire, the texture height and the texture period were varied in order to obtain a good insight into the general trends. The optical performance can be improved dramatically as the reflection, which is the largest optical loss, can be reduced by 95% of the original value. The spectra reveal absorption in the Cu(In,GaSe2 (CIGS layer of 95% and reflection below 2% over a large part of the spectrum. In essence, a virtually black CIGS cell stack can be achieved for textured cells with a metal nanogrid. Moreover, it turned out that the ratio between the width of the nanowire and the height of the texture is a critical parameter for optical losses.

  3. Improved Device Performance of Polymer Solar Cells by Using a Thin Light-harvesting-Complex Modified ZnO Film as the Cathode Interlayer.

    Science.gov (United States)

    Liu, Xiaohui; Liu, Cheng; Sun, Ruixue; Liu, Kun; Zhang, Yajie; Wang, Hai-Qiao; Fang, Junfeng; Yang, Chunhong

    2015-09-02

    In this study, a high-performance inverted polymer solar cell (PSC) has been fabricated by incorporating a zinc oxide (ZnO)/light-harvesting complex II (LHCII) stacked structure as the cathode interlayer. The LHCII not only smoothens the film surface of ZnO, improves the contact between ZnO and the photoactive layer, but also suppresses the charge carrier recombination at the interface, hence all the device parameters of PTB7-based solar cells are simultaneously improved, yielding higher power conversion efficiency (PCE) up to 9.01% compared with the control one (PCE 8.01%). And the thin LHCII modification layer also presents similar positive effects in the PTB7-Th:PC71BM system (PCE from 8.31% to 9.60%). These results put forward a facile approach to the interfacial modification in high-performance PSCs and provide new insight into developing and utilizing inexpensive and environmentally friendly materials from the fields of biological photosynthesis.

  4. Sequential PLD in oxygen/argon gas mixture of Al-doped ZnO thin films with improved electrical and optical properties

    Science.gov (United States)

    Coman, Tudor; Timpu, Daniel; Nica, Valentin; Vitelaru, Catalin; Rambu, Alicia Petronela; Stoian, George; Olaru, Mihaela; Ursu, Cristian

    2017-10-01

    Highly conductive transparent Al-doped ZnO (AZO) thin films were obtained at room temperature through sequential PLD (SPLD) from Zn and Al metallic targets in an oxygen/argon gas mixture. We have investigated the structural, electrical and optical properties as a function of the oxygen/argon pressure ratio in the chamber. The measured Hall carrier concentration was found to increase with argon injection from 1.3 × 1020 to 6.7 × 1020 cm-3, while the laser shots ratio for Al/Zn targets ablation was kept constant. This increase was attributed to an enhancement of the substitution doping into the ZnO lattice. The argon injection also leads to an increase of the Hall mobility up to 20 cm2 V-1 s-1, attributed to a reduction of interstitial-type defects. Thus, the approach of using an oxygen/argon gas mixture during SPLD from metallic targets allows obtaining at room temperature AZO samples with high optical transmittance (about 90%) and low electrical resistivity (down to 5.1 × 10-4 Ω cm).

  5. Study on the Conductance and Photo-Conductance of ZnO Thin Films at Different Temperatures in Air and N2-Atmosphere

    Science.gov (United States)

    Burruel-Ibarra, S. E.; Cruz-Vázquez, C.; Bernal, R.; Aceves, R.; Orante-Barrón, V. R.; Grijalva-Monteverde, H.; Piters, T. M.; Castaño, V. M.

    2016-01-01

    We report the photoconductance of ZnO thin films obtained from thermally treated ZnS films grown by a chemical bath deposition method. The measurements of photo-conductance were performed in an atmosphere of air or nitrogen (N2) at different temperatures between 300 K and 375 K. The augmented conductance after ultraviolet (UV) irradiation (330-380 nm) in air fades away slowly to its original value, whereas in a nitrogen atmosphere, a significant part of the augmented conductance remains. Measurements of electrical conductance as a function of temperature in N2 or air, in the dark or the light, seem to indicate that the donor concentration is increased during the UV irradiation, suggesting that oxygen vacancies and interstitials are created. An alternative model for the photoconduction in ZnO is proposed in which the slow increase of conduction during irradiation is explained by an increase of donors instead of photoelectrons. In this model, the photoelectrons would only play a role in the mechanism of the creation of donors.

  6. Sonicated sol–gel preparation of nanoparticulate ZnO thin films with various deposition speeds: The highly preferred c-axis (0 0 2) orientation enhances the final properties

    Energy Technology Data Exchange (ETDEWEB)

    Malek, M.F., E-mail: firz_solarzelle@yahoo.com [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Mamat, M.H. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Khusaimi, Z. [NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia); Sahdan, M.Z. [Microelectronic and Nanotechnology Centre (MiNT), Universiti Tun Hussein Onn Malaysia (UTHM), 86400 Batu Pahat, Johor (Malaysia); Musa, M.Z. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Zainun, A.R. [Faculty of Electrical and Electronics Engineering, Universiti Malaysia Pahang (UMP), Lebuhraya Tun Razak, 26300 Kuantan, Pahang (Malaysia); Suriani, A.B. [Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris, 35900 Tanjung Malim, Perak (Malaysia); Md Sin, N.D. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); Abd Hamid, S.B. [Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya (UM), 50603 Kuala Lumpur (Malaysia); Rusop, M. [NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia); NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA UiTM, 40450 Shah Alam, Selangor (Malaysia)

    2014-01-05

    Highlights: • Minimum stress of highly c-axis oriented ZnO was grown at suitable deposition speed. • The ZnO crystal orientation was influenced by strain/stress of the film. • Minimum stress/strain of ZnO film leads to lower defects. • Bandgap and defects were closely intertwined with strain/stress. • We report additional optical and electrical properties based on deposition speed. -- Abstract: Zinc oxide (ZnO) thin films have been deposited onto glass substrates at various deposition speeds by a sonicated sol–gel dip-coating technique. This work studies the effects of deposition speed on the crystallisation behaviour and optical and electrical properties of the resulting films. X-ray diffraction (XRD) analysis showed that thin films were preferentially oriented along the (0 0 2) c-axis direction of the crystal. The transformation sequence of strain and stress effects in ZnO thin films has also been studied. The films deposited at a low deposition speed exhibited a large compressive stress of 0.78 GPa, which decreased to 0.43 GPa as the deposition speed increased to 40 mm/min. Interestingly, the enhancement in the crystallinity of these films led to a significant reduction in compressive stress. All films exhibited an average transmittance of greater than 90% in the visible region, with absorption edges at ∼380 nm. The photoluminescence (PL) measurements indicated that the intensity of the emission peaks varied significantly with deposition speed. The optical band gap energy (E{sub g}) was evaluated as 3.276–3.289 eV, which increased with decreasing compressive stress along the c-axis. The energy band gap of the resulting ZnO films was found to be strongly influenced by the preferred c-axis (0 0 2) orientation.

  7. Low resistivity of Ni–Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power

    Energy Technology Data Exchange (ETDEWEB)

    Lee, JongWoo [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Hui, K.N. [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Hui, K.S., E-mail: kshui@hanyang.ac.kr [Department of Mechanical Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of); Cho, Y.R., E-mail: yescho@pusan.ac.kr [Department of Materials Science and Engineering, Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Chun, Ho-Hwan [Global Core Research Center for Ships and Offshore Plants (GCRC-SOP), Pusan National University, San 30 Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)

    2014-02-28

    Ni–Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV–vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40 W at 6.0 mTorr had the strongest (0 0 2) XRD peak and the lowest resistivity of approximately 2.19 × 10{sup −3} Ω cm with an optical transmittance of 90%.

  8. Distinguishing between ultrafast optical harmonic generation and multi-photon-induced luminescence from ZnO thin films by frequency-resolved interferometric autocorrelation microscopy.

    Science.gov (United States)

    Schmidt, S; Mascheck, M; Silies, M; Yatsui, T; Kitamura, K; Ohtsu, M; Lienau, C

    2010-11-22

    The nonlinear optical properties of thin ZnO film are studied using interferometric autocorrelation (IFRAC) microscopy. Ultrafast, below-bandgap excitation with 6-fs laser pulses at 800 nm focused to a spot size of 1 µm results in two emission bands in the blue and blue-green spectral region with distinctly different coherence properties. We show that an analysis of the wavelength-dependence of the interference fringes in the IFRAC signal allows for an unambiguous assignment of these bands as coherent second harmonic emission and incoherent, multiphoton-induced photoluminescence, respectively. More generally our analysis shows that IFRAC allows for a complete characterization of the coherence properties of the nonlinear optical emission from nanostructures in a single-beam experiment. Since this technique combines a very high temporal and spatial resolution we anticipate broad applications in nonlinear nano-optics.

  9. Distinguishing between ultrafast optical harmonic generation and multi-photon-induced luminescence from ZnO thin films by interferometric frequency-resolved autocorrelation microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Slawa; Mascheck, Manfred; Silies, Martin [Carl-von-Ossietzky-Universitaet, Oldenburg (Germany); Yatsui, Takashi; Kitamura, Kokoro; Ohtsu, Motoichi; Lienau, Christoph [University of Tokyo (Japan)

    2011-07-01

    The nonlinear optical properties of a thin ZnO film are studied using interferometric frequency-resolved autocorrelation (IFRAC) microscopy. By exciting the film with 6-fs, below-bandgap laser pulses at 800nm focused to a spot size of 1 {mu}m two emission bands in the blue and bluegreen spectral region with distinctly different coherence properties can be detected. We show that an analysis of the wavelength-dependence of the interference fringes in the IFRAC signal allows for an unambiguous assignment of these bands as coherent second harmonic emission and incoherent, multiphoton-induced photoluminescence, respectively. More generally our analysis shows that IFRAC allows for a complete characterization of the coherence properties of the nonlinear optical emission from nanostructures in a single-beam experiment. Since this technique combines a very high temporal and spatial resolution we anticipate broad applications in nonlinear nano-optics.

  10. Physical Properties of ZnO Thin Films Codoped with Titanium and Hydrogen Prepared by RF Magnetron Sputtering with Different Substrate Temperatures

    Directory of Open Access Journals (Sweden)

    Fang-Hsing Wang

    2015-01-01

    Full Text Available Transparent conducting titanium-doped zinc oxide (TZO thin films were prepared on glass substrates by RF magnetron sputtering using 1.5 wt% TiO2-doped ZnO as the target. Electrical, structural, and optical properties of films were investigated as a function of H2/(Ar + H2 flow ratios (RH and substrate temperatures (TS. The optimal RH value for achieving high conducting TZO:H thin film decreased from 10% to 1% when TS increased from RT to 300°C. The lowest resistivity of 9.2×10-4 Ω-cm was obtained as TS=100°C and RH=7.5%. X-ray diffraction patterns showed that all of TZO:H films had a hexagonal wurtzite structure with a preferred orientation in the (002 direction. Atomic force microscopy analysis revealed that the film surface roughness increased with increasing RH. The average visible transmittance decreased with increasing RH for the RT-deposited film, while it had not considerably changed with different RH for the 300°C-deposited films. The optical bandgap increased as RH increased, which is consistent with the Burstein-Moss effect. The figure of merits indicated that TS=100°C and RH=7.5% were optimal conditions for TZO thin films as transparent conducting electrode applications.

  11. Residual stress and texture in Aluminum doped Zinc Oxide layers deposited by reactive radio frequency magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Azanza Ricardo, C.L., E-mail: Cristy.Azanza@ing.unitn.it [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Pastorelli, M.; D' Incau, M. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy); Aswath, P. [College of Engineering, University of Texas at Arlington, TX (United States); Scardi, P. [Department of Civil, Environmental and Mechanical Engineering, University of Trento, 38123 via Mesiano 77, Trento (Italy)

    2016-04-30

    Aluminum doped Zinc Oxide thin films were deposited on standard soda-lime substrates by reactive radio frequency magnetron sputtering. Residual stress and texture were studied by X-ray diffraction, while X-ray Absorption Near Edge Spectroscopy provided information on the Al environment in the best performing thin films. The influence of deposition parameters on structural and microstructural properties is discussed. A correlation between microstructure and residual stress state with electrical and optical properties is proposed. - Highlights: • Al doped ZnO thin films were obtained by reactive radio frequency magnetron sputtering. • Correlation of stresses and texture with electrical and optical properties is shown. • Homogeneous and stress-free thin-films are the best performing ones. • XANES confirmed the doping mechanism and excluded some spurious phases.

  12. Preparation of Glass Plate-Supported Nanostructure ZnO Thin Film Deposited by Sol-Gel Spin-Coating Technique and Its Photocatalytic Degradation to Monoazo Textile Dye

    Directory of Open Access Journals (Sweden)

    Mohammad Hossein Habibi

    2008-01-01

    Full Text Available Glass plate-supported nanostructure ZnO thin films were deposited by sol-gel spin coating. Films were preheated at 275∘C for 10 minutes and annealed at 350, 450, and 550∘C for 80 minutes. The ZnO thin films were transparent ca 80–90% in visible range and revealed that absorption edges at about 370 nm. The c-axis orientation improves and the grain size increases which was indicated by an increase in intensity of the (002 peak at 34.4∘ in XRD corresponding to the hexagonal ZnO crystal. The photocatalytic degradation of X6G an anionic monoazo dye, in aqueous solutions, was investigated and the effects of some operational parameters such as the number of layer and reusability of ZnO nanostructure thin film were examined. The results showed that the five-layer coated glass surfaces have a very high photocatalytic performance.

  13. Photocatalytic activity of V doped ZnO nanoparticles thin films for the removal of 2- chlorophenol from the aquatic environment under natural sunlight exposure.

    Science.gov (United States)

    Salah, Numan; Hameed, A; Aslam, M; Babkair, Saeed S; Bahabri, F S

    2016-07-15

    Vanadium doped ZnO powders were used as precursors to deposit thin films of V(5+) incorporated ZnO nanoparticles on glass substrates by the pulsed laser deposition technique. The observed variations in Raman signals, visible region shift in the diffuse reflectance spectra along with a small shift in the (101) reflections of the X-ray diffraction (XRD) confirmed the insertion of V(5+) ions in ZnO lattice. No other additional reflection in the XRD results other than ZnO further endorsed the occupation of lattice positions by V entities rather than independent oxide formation. The asymmetric XPS peaks of Zn2p and V2p core levels confirmed the existence of both in the vicinity. The existence of minimal proportion of V(3+) along with V(5+) states varied the alteration of the oxidation states V in the synthetic route. The SEM images at various resolutions displayed the uniform distribution identical nanoparticles without the presence of additional phases in the deposited films. The SEM cross-section measurements revealed the uniform thickness of ∼90 nm of each film, whereas the surface studies of the films were performed by AFM. The as-synthesized films were tested for photocatalytic activity in sunlight illumination for the removal of 2-chlorophenol. The unique feature of the study was the estimation of the photocatalytic activity 20 ppm of 2-chlorophenol by exposing the low exposed area. The degradation of the substrate was measured by liquid phase UV-vis spectroscopy, whereas total organic carbon measurement revealed the mineralization of the substrate. The released Cl(-) ions were also measured by ion chromatography. The estimated flatband potentials and pHzpc values of the V doped materials, by Mott-Schottky analysis and zeta potential measurements respectively, were correlated with the photocatalytic activity. The kinetics of the photocatalytic degradation/mineralization process was estimated and results were correlated with the plausible mechanism. Copyright

  14. Dielectric function of very thin nano-granular ZnO layers with different states of growth.

    Science.gov (United States)

    Gilliot, Mickaël; Hadjadj, Aomar; En Naciri, Aotmane

    2015-04-01

    Zinc oxide (ZnO) layers consisting of grains closely packed together are grown using a solgel synthesis and spin-coating deposition process. The morphologies are characterized by atomic force microscopy and X-ray diffraction, and their optical properties are investigated by spectroscopic ellipsometry at the different stages of the growth process. The optical observations are correlated with evolution of morphology and orientation. Two remarkable evolutions are observed: gradual evolution of morphology, crystallinity, and excitonic contribution with the first deposition steps; and transformation from a poorly oriented to a c-axis oriented crystalline state featuring a large contribution of bound excitons after thermal annealing. A modified Elliott model is used to obtain the optical parameters of ZnO, including bandgap and exciton energies. A simple growth mechanism is proposed to explain the evolution of the layers in accordance with the different deposition steps.

  15. Effect of initialization time on application potentiality of a ZnO thin film based LPG sensor

    Directory of Open Access Journals (Sweden)

    Parta Mitra

    2009-09-01

    Full Text Available A prototype electronic LPG (Liquid Petroleum Gas sensor based on zinc oxide (ZnO film has been fabricated. The objective of the present work was to investigate the importance of initialization time (also called warm-up time on the application potentiality of the ZnO based alarm. The role of sensor geometry on initialization time is presented. The electronic circuitry of the prototype LPG device alarm is discussed. It is shown that that the initialization time depends on the switch off time (or the time for which the sensor was kept idle. The resistive mode sensors can be fixed at 40% LEL (Lower Explosive Limit of LPG for safe operation.

  16. Synthesis of ZnO Nanoparticles to Fabricate a Mask-Free Thin-Film Transistor by Inkjet Printing

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available We report a low-cost, mask-free, reduced material wastage, deposited technology using transparent, directly printable, air-stable semiconductor slurries and dielectric solutions. We have demonstrate an emerging process for fabricating printable transistors with ZnO nanoparticles as the active channel and poly(4-vinylphenol (PVP matrix as the gate dielectric, respectively, and the inkjet-printed ZnO TFTs have shown to exhibit the carrier mobility of 0.69 cm2/Vs and the threshold voltage of 25.5 V. We suggest that the printable materials and the printing technology enable the use of all-printed low-cost flexible displays and other transparent electronic applications.

  17. Properties of ZnO thin films grown at room temperature by using ionized cluster beam deposition

    CERN Document Server

    Whangbo, S W; Kim, S G; Cho, M H; Jeong, K H; Whang, C N

    2000-01-01

    ZnO films with a thickness of 120 nm were deposited on Si(100) at room temperature by using the reactive-ionized cluster beam deposition technique. The effects of the acceleration voltage (V sub a) on the properties, such as the crystallinity, the induced film strain, the surface roughness, and the electrical and the optical properties of the films, were investigated. The ZnO films had only a (002) crystalline orientation and uniformly composed through the whole thickness. As the V sub a increased, more strain was induced in the film, and the packing density caused by the structural imperfection was lowered. The films prepared under the optimum condition (V sub a = 3 kV) on a glass substrate showed good optical transmittance, and the band-gap of the film was evaluated to be 3.32 eV.

  18. Photoluminescence and electrochemical properties of transparent CeO{sub 2}-ZnO nanocomposite thin films prepared by Pechini method

    Energy Technology Data Exchange (ETDEWEB)

    Sani, Z.K.; Ghodsi, F.E.; Mazloom, J. [University of Guilan, Department of Physics, Faculty of Science, Namjoo Ave, P.O. Box 41335-1914, Rasht (Iran, Islamic Republic of)

    2017-02-15

    Nanocomposite thin films of CeO{sub 2}-ZnO with different molar ratios of Zn/Ce (=0, 0.25, 0.5, 0.75 and 1) were prepared by the Pechini sol-gel route. Various spectroscopic and electrochemical techniques were applied to investigate the films. XRD patterns of all the samples exhibited the peaks corresponding to cubic fluorite structure of ceria and the (101) and (103) peaks of ZnO with hexagonal structure was just observed in the sample with molar ratio of 1. EDS confirmed the presence of constituent of element in the samples. FESEM images of the films showed a surface composed of nanograins. AFM analysis revealed that root mean square roughness was enhanced as molar ratio of Zn/Ce increased. Moreover, fractal dimension of surfaces were calculated by cube counting approach. Optical measurements indicated that the film with molar ratio of 1 has the highest transmission and lowest reflectivity. The optical band gap values varied between 2.95 and 3.42 eV. The compositional dependence of refractive index and extinction coefficient were reported. The UV and blue emission appeared in PL spectra. The highest photoluminescence emission intensity was observed in the 1:1 molar ratio sample. The cyclic voltammetry measurements indicated the highest charge density (9.75 mC cm{sup -2}) and diffusion coefficient (3.507 x 10{sup -17} cm{sup 2} s{sup -1}) belonged to the Ce/Zn (1:1) thin film. (orig.)

  19. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Energy Technology Data Exchange (ETDEWEB)

    Loukanov, Alexandre, E-mail: loukanov@mail.saitama-u.ac.jp [Saitama University, Department of Chemistry, Faculty of Science (Japan); Filipov, Chavdar [University of Forestry, Department of Infectious pathology, hygiene, technology and control of food stuffs of animal origin, Faculty of Veterinary Medicine (Bulgaria); Valcheva, Violeta [Bulgarian Academy of Science, Department of Infectious Diseases, Institute of microbiology (Bulgaria); Lecheva, Marta [University of Mining and Geology “St. Ivan Rilski”, Laboratory of Engineering NanoBiotechnology, Department of Engineering Geoecology (Bulgaria); Emin, Saim [University of Nova Gorica, Materials Research Laboratory (Slovenia)

    2015-04-15

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600–1000 nm). They have been prepared by using both wet sol–gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  20. Growth stimulation of Bacillus cereus and Pseudomonas putida using nanostructured ZnO thin film as transducer element

    Science.gov (United States)

    Loukanov, Alexandre; Filipov, Chavdar; Valcheva, Violeta; Lecheva, Marta; Emin, Saim

    2015-04-01

    The semiconductor zinc oxide nanomaterial (ZnO or ZnO:H) is widely used in advanced biosensor technology for the design of highly-sensitive detector elements for various applications. In the attempt to evaluate its effect on common microorganisms, two types of nanostructured transducer films have been used (average diameter 600-1000 nm). They have been prepared by using both wet sol-gel method and magnetron sputtering. Their polycrystalline structure and specific surface features have been analyzed by X-ray diffraction (XRD), scanning electron microscope, and atomic force microscope. The assessment of growth stimulation of bacteria was determined using epifluorescent microscope by cell staining with Live/Dead BacLight kit. In our experiments, the growth stimulation of Gram-positive and Gram-negative bacteria on nanostructured ZnO film is demonstrated by Bacillus cereus and Pseudomonas putida. These two bacterial species have been selected, because they are well known and studied in biosensor technologies, with structural difference of their cell walls. These pathogens are easy for with common source in the liquid food or some commercial products. Our data has revealed that the method of transducer film preparation influences strongly bacterial inhibition and division. These results present the transforming signal precisely, when ZnO is used in biosensor applications.

  1. The effect of pressure and W-doping on the properties of ZnO thin films for NO{sub 2} gas sensing

    Energy Technology Data Exchange (ETDEWEB)

    Tesfamichael, T., E-mail: t.tesfamichael@qut.edu.au [Science and Engineering Faculty, Queensland University of Technology, 2 George Street, Brisbane, 4000 QLD (Australia); Cetin, C. [Istanbul Technical University, Department of Mechanical Engineering, Istanbul (Turkey); Piloto, C. [Science and Engineering Faculty, Queensland University of Technology, 2 George Street, Brisbane, 4000 QLD (Australia); Arita, M. [Laboratory of Nanoscience and Materials, Hokkaido University, Kita 14, Nishi 9, Kita-Ku, Sapporo 060-0814 (Japan); Bell, J. [Science and Engineering Faculty, Queensland University of Technology, 2 George Street, Brisbane, 4000 QLD (Australia)

    2015-12-01

    Highlights: • Pure and W-doped ZnO films were synthesized using sputtering at 0.4 Pa and 1.33 Pa. • The doped film deposited at 1.33 Pa has shown spiky morphology with much lower grain density and porosity than the film deposited at 0.4 Pa. • This film deposited at 1.33 Pa favoured the formation of active site for OH adsorption and found not suitable for gas sensing. • A higher oxidation state of W (35.9 eV) was found in the W-doped ZnO film deposited at 0.4 Pa. • This film deposited at 0.4 Pa has shown greater gas sensing to NO{sub 2} at lower operating temperature most likely due to enhanced free-carrier defects. - Abstract: Pure and W-doped ZnO thin films were obtained using magnetron sputtering at working pressures of 0.4 Pa and 1.33 Pa. The films were deposited on glass and alumina substrates at room temperature and subsequently annealed at 400 °C for 1 h in air. The effects of pressure and W-doping on the structure, chemical, optical and electronic properties of the ZnO films for gas sensing were examined. From AFM, the doped film deposited at higher pressure (1.33 Pa) has spiky morphology with much lower grain density and porosity compared to the doped film deposited at 0.4 Pa. The average gain size and roughness of the annealed films were estimated to be 65 nm and 2.2 nm, respectively with slightly larger grain size and roughness appeared in the doped films. From XPS the films deposited at 1.33 Pa favoured the formation of adsorbed oxygen on the film surface and this has been more pronounced in the doped film which created active sites for OH adsorption. As a consequence the W-doped film deposited at 1.33 Pa was found to have lower oxidation state of W (35.1 eV) than the doped film deposited at 0.4 Pa (35.9 eV). Raman spectra indicated that doping modified the properties of the ZnO film and induced free-carrier defects. The transmittance of the samples also reveals an enhanced free-carrier density in the W-doped films. The refractive index of the

  2. Characterization of ZnO Interlayers for Organic Solar Cells: Correlation of Electrochemical Properties with Thin-Film Morphology and Device Performance.

    Science.gov (United States)

    Ou, Kai-Lin; Ehamparam, Ramanan; MacDonald, Gordon; Stubhan, Tobias; Wu, Xin; Shallcross, R Clayton; Richards, Robin; Brabec, Christoph J; Saavedra, S Scott; Armstrong, Neal R

    2016-08-03

    This report focuses on the evaluation of the electrochemical properties of both solution-deposited sol-gel (sg-ZnO) and sputtered (sp-ZnO) zinc oxide thin films, intended for use as electron-collecting interlayers in organic solar cells (OPVs). In the electrochemical studies (voltammetric and impedance studies), we used indium-tin oxide (ITO) over coated with either sg-ZnO or sp-ZnO interlayers, in contact with either plain electrolyte solutions, or solutions with probe redox couples. The electroactive area of exposed ITO under the ZnO interlayer was estimated by characterizing the electrochemical response of just the oxide interlayer and the charge transfer resistance from solutions with the probe redox couples. Compared to bare ITO, the effective electroactive area of ITO under sg-ZnO films was ca. 70%, 10%, and 0.3% for 40, 80, and 120 nm sg-ZnO films. More compact sp-ZnO films required only 30 nm thicknesses to achieve an effective electroactive ITO area of ca. 0.02%. We also examined the electrochemical responses of these same ITO/ZnO heterojunctions overcoated with device thickness pure poly(3-hexylthiophehe) (P3HT), and donor/acceptor blended active layers (P3HT:PCBM). Voltammetric oxidation/reduction of pure P3HT thin films on ZnO/ITO contacts showed that pinhole pathways exist in ZnO films that permit dark oxidation (ITO hole injection into P3HT). In P3HT:PCBM active layers, however, the electrochemical activity for P3HT oxidation is greatly attenuated, suggesting PCBM enrichment near the ZnO interface, effectively blocking P3HT interaction with the ITO contact. The shunt resistance, obtained from dark current-voltage behavior in full P3HT/PCBM OPVs, was dependent on both (i) the porosity of the sg-ZnO or sp-ZnO films (as revealed by probe molecule electrochemistry) and (ii) the apparent enrichment of PCBM at ZnO/P3HT:PCBM interfaces, both effects conveniently revealed by electrochemical characterization. We anticipate that these approaches will be

  3. Textured surface structures formed using new techniques on transparent conducting Al-doped zinc oxide films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Miyata, Toshihiro, E-mail: tmiyata@neptune.kanazawa-it.ac.jp [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Uozaki, Ryousuke [Optoelectronic Device System R& D Center, Kanazawa Institute of Technology, Nonoichi, Ishikawa 921-8501 (Japan); Sai, Hitoshi; Koida, Takashi [Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2016-09-01

    Surface-textured Al-doped ZnO (AZO) films formed using two new techniques based on magnetron sputtering deposition were developed by optimizing the light scattering properties to be suitable for transparent electrode applications in thin-film silicon solar cells. Scrambled egg-like surface-textured AZO films were prepared using a new texture formation technique that post-etched pyramidal surface-textured AZO films prepared under deposition conditions suppressing c-axis orientation. In addition, double surface-textured AZO films were prepared using another new texture formation technique that completely removed, by post-etching, the pyramidal surface-textured AZO films previously prepared onto the initially deposited low resistivity AZO films; simultaneously, the surface of the low resistivity films was slightly etched. However, the obtained very high haze value in the range from the near ultraviolet to visible light in the scrambled egg-like surface-textured AZO films did not contribute significantly to the obtainable photovoltaic properties in the solar cells fabricated using the films. Significant light scattering properties as well as a low sheet resistance could be achieved in the double surface-textured AZO films. In addition, a significant improvement of external quantum efficiency in the range from the near ultraviolet to visible light was achieved in superstrate-type n-i-p μc-Si:H solar cells fabricated using a double surface-textured AZO film prepared under optimized conditions as the transparent electrode. - Highlights: • Double surface-textured AZO films prepared using a new texture formation technique • Extensive light scattering properties with low sheet resistance achieved in the double surface-textured AZO films • Improved external quantum efficiency of μc-Si:H solar cells using a double surface-textured AZO film.

  4. Effects of Al Concentration on Structural and Optical Properties of Al-doped ZnO Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Min Su; Yim, Kwang Gug; Leem, Jae Young [Inje University, Gimhae (Korea, Republic of); Son, Jeong Sik [Kyungwoon University, Gumi (Korea, Republic of)

    2012-04-15

    Aluminium (Al)-doped zinc oxide (AZO) thin films with different Al concentrations were prepared by the solgel spin-coating method. Optical parameters such as the optical band gap, absorption coefficient, refractive index, dispersion parameter, and optical conductivity were studied in order to investigate the effects of the Al concentration on the optical properties of AZO thin films. The dispersion energy, single-oscillator energy, average oscillator wavelength, average oscillator strength, and refractive index at infinite wavelength of the AZO thin films were found to be affected by Al incorporation. The optical conductivity of the AZO thin films also increases with increasing photon energy

  5. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    Energy Technology Data Exchange (ETDEWEB)

    Khalid, Faridzatul Shahira; Awang, Rozidawati [School of Applied Physics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia)

    2014-09-03

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  6. Effect of deposition times on structure of Ga-doped ZnO thin films as humidity sensor

    Science.gov (United States)

    Khalid, Faridzatul Shahira; Awang, Rozidawati

    2014-09-01

    Gallium doped zinc oxide (GZO) has good electrical property. It is widely used as transparent electrode in photovoltaic devices, and sensing element in gas and pressure sensors. GZO thin film was prepared using magnetron sputtering. Film deposition times were set at 10, 15, 20, 25 and 30 minutes to get samples of different thickness. X-ray diffraction (XRD) was used to determine the structure of GZO thin films. Structure for GZO thin film is hexagonal wurtzite structure. Morphology and thickness of GZO thin films was observed from FESEM micrographs. Grain size and thickness of thin films improved with increasing deposition times. However, increasing the thickness of thin films occur below 25 minutes only. Electrical properties of GZO thin films were studied using a four-point probe technique. The changes in the structure of the thin films lead to the changed of their electrical properties resulting in the reduction of the film resistance. These thin films properties significantly implying the potential application of the sample as a humidity sensor.

  7. Ultrafast electron spin dynamics in ZnO and Zn1-xCoxO sol-gel thin films

    Directory of Open Access Journals (Sweden)

    Leitenstorfer A.

    2013-03-01

    Full Text Available We probe the electron spin dynamics in ZnO and Zn1-xCoxO sol-gel films with time-resolved Faraday rotation spectroscopy. Dephasing times T2* on the order of nanoseconds are observed at room temperature due to charge-separated states. In ZnCoO the effective electron Landé g factor rises with increasing Co2+ concentration, providing the mean-field electron-Co2+ exchange energy N0α = +0.25 ± 0.02 eV.

  8. Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

    Energy Technology Data Exchange (ETDEWEB)

    Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in [Department of Physics, Cochin University of Science and Technology, Kochi-22, Kerala (India); Antony, Aldrin [Department of Applied Physics and Optics, University of Barcelona, Barcelona (Spain); Department of Energy Science and Engineering, IIT Bombay, Mumbai (India); Rojas, Fredy [Department of Applied Physics and Optics, University of Barcelona, Barcelona (Spain)

    2015-03-28

    Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BST thin films show significantly improved tunable performance over polycrystalline thin films.

  9. New approach to biosensing of co-enzyme nicotinamide adenine dinucleotide (NADH) by incorporation of neutral red in aluminum doped nanostructured ZnO thin films.

    Science.gov (United States)

    V T, Fidal; T S, Chandra

    2017-06-01

    Biosensing of NADH on bare electrodes has drawbacks such as high over-potential and poisoning during the oxidation reaction. To overcome this challenge a different approach has been undertaken by incorporating neutral red (NR) in Al doped ZnO (AZO) thin films using one-pot chemical bath deposition (CBD). The surface morphology of the films was hexagonal nanorods along the c-axis, perpendicular to the substrate. The thickness of the thin films were ranging from 400 to 3000nm varying dependent on time of deposition (30 to 150min). The average diameter of the nanorods was larger in the presence of neutral red (NR-AZO) with ~300nm in contrast to its absence (AZO) with ~200nm. The density of the packing of nanorods was dependent on the citrate concentration used during deposition. Control over the dopant concentration in the films was achieved by varying the area of Al foil used in the deposition solution. The selected area diffraction (SAED) and X-ray diffraction (XRD) indicated 002 plane of orientation in the nanorods. FTIR and FT-Raman analysis revealed conserved structure of NR and AZO. Chronoamperometric (CA) analysis showed a sensitivity of 0.45μAcm(-2)mM(-1) and LoD of 22μM within the range 0.075-4mM of NADH. The biological sensing of NADH was validated by physical adsorption of NAD(+) dependent-lactate dehydrogenase (LDH) on NR-AZO. CA showed sensitivity of 0.56μAcm(-2)mM(-1) and LoD for lactate was 27μM in the range of 0.1-1mM of lactate. Further validation with real-time serum sample shows that LDH/NR-AZO correlates with the clinical values. The distinction in this study is that the organic mediator like neutral red has been incorporated into the grain structure of the ZnO thin film whereas other study with the mediators have only attempted surface functionalization. This article is part of a Special Issue entitled "Recent Advances in Bionanomaterials" Guest Editor: Dr. Marie-Louise Saboungi and Dr. Samuel D. Bader. Copyright © 2017 Elsevier B.V. All

  10. Suppression effect of silicon (Si on Er3+ 1.54μm excitation in ZnO thin films

    Directory of Open Access Journals (Sweden)

    Bo Xu

    2016-08-01

    Full Text Available We have investigated the photoluminescence (PL characteristics of ZnO:Er thin films on Si (100 single crystal and SiO2-on-silicon (SiO2 substrates, synthesized by radio frequency magnetron sputtering. Rutherford backscattering/channeling spectrometry (RBS, X-ray diffraction (XRD and atomic force microscope (AFM were used to analyze the properties of thin films. The diffusion depth profiles of Si were determined by second ion mass spectrometry (SIMS. Infrared spectra were obtained from the spectrometer and related instruments. Compared with the results at room temperature (RT, PL (1.54μm intensity increased when samples were annealed at 250°C and decreased when at 550°C. A new peak at 1.15μm from silicon (Si appeared in 550°C samples. The Si dopants in ZnO film, either through the diffusion of Si from the substrate or ambient, directly absorbed the energy of pumping light and resulted in the suppression of Er3+ 1.54μm excitation. Furthermore, the energy transmission efficiency between Si and Er3+ was very low when compared with silicon nanocrystal (Si-NC. Both made the PL (1.54μm intensity decrease. All the data in experiments proved the negative effects of Si dopants on PL at 1.54μm. And further research is going on.

  11. Preparation of ZnO thin films by MO-CVD using fibrous bis (acetylacetonato) zinc (II) and ozone

    Science.gov (United States)

    Haga, K.; Abe, S.; Takizawa, Y.; Yubuta, K.; Shishido, T.

    2013-03-01

    The fibrous bis (acetylacetonato) zinc (II) (Zn(C5H7O2)2·xH2O) was prepared with novel apparatus involved the vaporization and the recrystallization, and was investigated by differential thermal analysis (DTA), flourier transform infrared spectroscopy (FT-IR) with attenuated total reflection (ATR), and the inductively coupled plasma optical emission spectroscopy (ICP-OES). The zinc oxide (ZnO) films were prepared by the low-pressure CVD (LP-CVD) using the fibrous Zn(C5H7O2)2·xH2O and ozone(O3). The DTA curve of the fibrous material with a wide-ranging endothermic peak under 100°C according to desorption of the hydrated water separated to two peaks decreasing in the evaporation temperature. The resistivity of the ZnO films has changed widely from 104 to 108 Ωcm by the fibrous material with a different preparation condition.

  12. Spectroscopic ellipsometry, optical, structural and electrical investigation of sprayed pure and Sn-doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Attaf N.

    2013-03-01

    Full Text Available In this work, we report the transparent pure and Sn-doped zinc oxide (ZnO. The films were deposited onto microscope glass substrate which was heated at 350±5C° by ultrasonic spray pyrolysis (U S P deposition technique. The concentrations of Sn were selected within the range of 0-3% by step of 0.5% and the time deposition is kept at 5 min. A (002-oriented wurtzite crystal structure was confirmed by X-rays patterns; and grain size varied within the range 7.37-14.84nm, and cristanillity is calculated goes from14.4 to 45.9%. Based on UV-VIS-IR analysis, the results revealed the high transparency of the sprayed films which exceeds 90%. The band gap energy was of 3.26-3.30 eV. The film thickness was estimated by spectroscopy ellipsometry and the found values were of 165-270nm. The refractive index is in the range of 2.75.The obtained electrical parameters were around 1018 cm−3, 3.6 cm2/Vs, 1.6Ω.cm; 5.8cm3/C. finally the Sn-doping has influenced the physical parameters of asground ZnO films

  13. Structural and optoelectrical properties of Ga-doped ZnO semiconductor thin films grown by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, J.; Zhong, Z.Y. [College of Electronic Information Engineering, South-Central University for Nationalities (SCUN), Wuhan (China)

    2012-09-15

    Transparent conductive gallium-doped zinc oxide (Ga-doped ZnO) films were prepared on glass substrate by magnetron sputtering. The influence of substrate temperature on structural, optoelectrical and surface properties of the films were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), spectrophotometer, four-point probe and goniometry, respectively. Experimental results show that all the films are found to be oriented along the c-axis. The grain size and optical transmittance of the films increase with increasing substrate temperature. The average transmittance in the visible wavelength range is above 83% for all the samples. It is observed that the optoelectrical property is correlated with the film structure. The Ga-doped ZnO film grown at the substrate temperature of 400 C has the highest figure of merit of 1.25 x 10{sup -2} {Omega}{sup -1}, the lowest resistivity of 1.56 x 10{sup -3} {Omega}.cm and the highest surface energy of 32.3 mJ/m{sup 2}. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  14. Spin texture on top of flux avalanches in Nb/Al 2 O 3 /Co thin film heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Lopes, R. F.; Carmo, D.; Colauto, F.; Ortiz, W. A.; de Andrade, A. M. H.; Johansen, T. H.; Baggio-Saitovitch, E.; Pureur, P.

    2017-01-07

    We report on magneto-optical imaging, magnetization, Hall effect, and magneto-resistance experiments in Nb/Al2O3/Co thin film heterostructures. The magneto-transport measurements were performed in samples where electrical contacts were placed on the Co layer. The magnetic field is applied perpendicularly to the plane of the film and gives rise to abrupt flux penetration of dendritic form. A magnetization texture is imprinted in the Co layer in perfect coincidence with these ramifications. The spin domains that mimic the vortex dendrites are stable upon the field removal. Moreover, the imprinted spin structure remains visible up to room temperature. In the region of the field-temperature diagram where flux instabilities are known to occur in bare Nb films, irregular jumps are observed in the magnetic hysteresis and large amplitude noise is detected in the magneto-resistance and Hall resistivity data when measured as a function of the field. Published by AIP Publishing.

  15. Scattering properties of textured TCO substrates in thin-film silicon solar cells; Streuverhalten von texturierten TCO-Substraten in Silizium-Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Schulte, Melanie

    2009-04-27

    In this PhD thesis the scattering properties of textured transparent conducting oxides (TCO) for the application in thin-film silicon solar cells are investigated. The main focus is the correlation between the nanotextured surface and its scattering behaviour. Therefore a ray tracing model based on geometric optics and atomic force microscopy data is developed. Simulation results are compared and discussed with measurements of angle resolved scattering in the far field and experimentally determined scanning near field microscopy data in the near field. Besides, simulation results obtained by applying geometric optics and solutions of the Maxwell equation in the near field are compared and discussed. The scattering properties of TCO-air and TCO-silicon interfaces are considered. (orig.)

  16. Fractal analysis of internal and peripheral textures of small peripheral bronchogenic carcinomas in thin-section computed tomography: comparison of bronchioloalveolar cell carcinomas with nonbronchioloalveolar cell carcinomas.

    Science.gov (United States)

    Kido, Shoji; Kuriyama, Keiko; Higashiyama, Masahiko; Kasugai, Tsutomu; Kuroda, Chikazumi

    2003-01-01

    To analyze the internal and peripheral textures of small peripheral bronchogenic carcinomas (analysis. Thin-section computed tomography images from 70 patients with bronchogenic carcinomas (61 adenocarcinomas and 9 squamous cell carcinomas) were used. Regions of interest (ROIs) with a matrix size of 32 x 32 (0.326 mm per pixel) were selected manually on the lung-nodule interfaces and within the nodules on HRCT images. Three-dimensional density surfaces based on CT values of ROIs were characterized by fractal dimensions (FDs). When all the bronchogenic carcinomas were divided into bronchioloalveolar cell carcinomas (BACs) and other bronchogenic carcinomas (nonBACs), there were significant differences between BACs and nonBACs in the FDs obtained from the internal textures (mean: 2.38 +/- 0.05 versus 2.19 +/- 0.05; Ptextures (mean: 2.16 +/- 0.01 versus 2.06 +/- 0.01; Ptextures of BACs that reveal ground-glass opacities are more complicated than those of nonBACs. The FDs can differentiate between small localized BACs, which have a good prognosis, and nonBACs, which have a poor prognosis. Fractal analysis is promising for characterization of small peripheral pulmonary bronchogenic carcinomas based on radiographic features of HRCT images.

  17. High haze textured surface B-doped ZnO-TCO films on wet-chemically etched glass substrates for thin film solar cells

    Science.gov (United States)

    Xinliang, Chen; Jieming, Liu; Jia, Fang; Ze, Chen; Ying, Zhao; Xiaodan, Zhang

    2016-08-01

    Textured glass substrates with crater-like feature sizes of ˜5-30 μm were obtained using the chemical etching method through adjusting the treatment round (R). Pyramid-like boron-doped zinc oxide (ZnO:B) films with feature sizes of ˜300-800 nm were deposited on the etched glass substrates by the metal organic chemical deposition (MOCVD) technique using water, diethylzinc and 1%-hydrogen-diluted diborane. The ZnO:B films on the etched glass with micro/nano double textures presented a much stronger light-scattering capability than the conventional ZnO:B on the flat glass and their electrical properties changed little. Typical etched glass-3R/ZnO:B exhibited a high root mean square (RMS) roughness of ˜160 nm. The haze values at the wavelengths of 550 nm and 850 nm for etched glass-3R/ZnO:B sample were 61% and 42%, respectively. Finally, the optimized etched glass/ZnO:B was applied in the silicon (Si) based thin film solar cells. The high haze etched glass/ZnO:B substrates have potential merits for thin film solar cells. Project supported by the State Key Development Program for Basic Research of China (Nos. 2011CBA00706, 2011CBA00707), the Tianjin Applied Basic Research Project and Cutting-Edge Technology Research Plan (No. 13JCZDJC26900), the Tianjin Major Science and Technology Support Project (No. 11TXSYGX22100), the National High Technology Research and Development Program of China (No. 2013AA050302), and the Fundamental Research Funds for the Central Universities (No. 65010341).

  18. Tailoring the textured surface of porous nanostructured NiO thin films for the detection of pollutant gases

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, R., E-mail: raj.kumar@ing.unibs.it [CNR-INO SENSOR Lab., Via Branze 35, 25133 Brescia (Italy); University of Brescia, Dept. of Information Engineering, Via Valotti, 9, 25133 Brescia (Italy); Baratto, C.; Faglia, G.; Sberveglieri, G. [CNR-INO SENSOR Lab., Via Branze 35, 25133 Brescia (Italy); University of Brescia, Dept. of Information Engineering, Via Valotti, 9, 25133 Brescia (Italy); Bontempi, E.; Borgese, L. [INSTM and Chemistry for Technologies Laboratory, University of Brescia, Department of Mechanical and Industrial Engineering, Via Branze, 38, 25133 Brescia (Italy)

    2015-05-29

    In the present article, an experimental approach to detect pollutant gases in presence of humidity was applied for gas sensors based on p-type NiO thin films. NiO thin films were deposited by radio frequency magnetron sputtering in inert atmosphere using a NiO target. Thin films were investigated by scanning electron microscopy to observe their surface morphology. Crystal structure and vibrational study were investigated by X-ray diffraction and micro-Raman spectroscopy, respectively. It was observed that deposition temperature played a crucial role in the structural and surface morphology of NiO thin films. Sensing response of the nanostructured thin films to reducing and oxidizing gas was studied as a function of gas concentration and operating temperature. A double digit (12.3) response was observed towards ozone at 200 °C, while maximum response to ethanol and acetone was recorded at 400 °C. A correlation was established between sensing response and crystalline dimension for ozone sensing. The result showed that NiO thin films can be used as p-type metal oxide material for the fabrication of solid state gas sensors to detect low concentrations of ozone (70 ppb). - Highlights: • Nickel oxide phase was confirmed by X-ray diffraction. • Raman signal of nickel oxide was recorded by micro-Raman spectroscopy. • Best sensing response was recorded for 70 ppb ozone at 200 °C working temperature. • Sensing response towards ozone increases as the crystalline dimension decreases. • Nickel oxide is a p-type oxide material.

  19. Effect of temperature and discharge voltage on the properties of Co-doped ZnO thin films deposited by pulsed electron beam ablation

    Science.gov (United States)

    Ali, Asghar; Henda, Redhouane; Fagerberg, Ragnar

    2017-11-01

    Cobalt-doped ZnO (CZO) thin films have been deposited from CoxZn1-xO (x = 0.20) target on Si (100) substrate by pulsed electron beam ablation (PEBA). The effects of process temperature (350 °C-800 °C) and electron beam acceleration voltage (15 kV, 16 kV) on the deposited films have been assessed. The films have been prepared at constant beam pulse frequency (2 Hz) and Argon background pressure (∼3 mTorr). The structure and surface morphology of CZO films have been investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM). As per SEM data, the results show that the films consist of Co rich nano-sized globules (∼20 nm-300 nm). Energy dispersive x-ray (EDX) measurements reveal that Co content in the films seems to be unaffected by accelerating voltage while it increases with temperature in the range 350 °C-450 °C. At higher deposition temperatures (600 °C & 800 °C), the films exhibit faceted particles and are relatively rough. The films deposited at 800 °C consist of a predominantly Co phase. X-ray photoelectron spectroscopy (XPS) data confirm the presence of metallic cobalt in the films, whose content increases with temperature but is practically unaffected by beam voltage. X-ray diffraction (XRD) analysis confirms the presence of herxagonal close-packed (hcp) metallic cobalt in the films.

  20. Effect of Channel Thickness, Annealing Temperature and Channel Length on Nanoscale Ga2O3-In2O3-ZnO Thin Film Transistor Performance.

    Science.gov (United States)

    Kumaresan, Yogeenth; Pak, Yusin; Lim, Namsoo; Lee, Ryeri; Song, Hui; Kim, Tae Heon; Choi, Boran; Jung, Gun Young

    2016-06-01

    We demonstrated the effect of active layer (channel) thickness and annealing temperature on the electrical performances of Ga2O3-In2O3-ZnO (GIZO) thin film transistor (TFT) having nanoscale channel width (W/L: 500 nm/100 μm). We found that the electron carrier concentration of the channel was decreased significantly with increasing the annealing temperature (100 degrees C to 300 degrees C). Accordingly, the threshold voltage (V(T)) was shifted towards positive voltage (-12.2 V to 10.8 V). In case of channel thickness, the V(T) was shifted towards negative voltage with increasing the channel thickness. The device with channel thickness of 90 nm annealed at 200 degrees C revealed the best device performances in terms of mobility (10.86 cm2/Vs) and V(T) (0.8 V). The effect of channel length was also studied, in which the channel width, thickness and annealing temperature were kept constant such as 500 nm, 90 nm and 200 degrees C, respectively. The channel length influenced the on-current level significantly with small variation of V(T), resulting in lower value of on/off current ratio with increa