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Sample records for ternary chalcopyrite semiconductors

  1. Ternary chalcopyrite semiconductors

    CERN Document Server

    Shay, J L; Pamplin, B R

    2013-01-01

    Ternary Chalcopyrite Semiconductors: Growth, Electronic Properties, and Applications covers the developments of work in the I-III-VI2 and II-IV-V2 ternary chalcopyrite compounds. This book is composed of eight chapters that focus on the crystal growth, characterization, and applications of these compounds to optical communications systems. After briefly dealing with the status of ternary chalcopyrite compounds, this book goes on describing the crystal growth of II-IV-V2 and I-III-VI2 single crystals. Chapters 3 and 4 examine the energy band structure of these semiconductor compounds, illustrat

  2. Quadrupole interaction in ternary chalcopyrite semiconductors experiments and theory

    CERN Document Server

    Dietrich, M; Degering, D; Deicher, M; Kortus, J; Magerle, R; Möller, A; Samokhvalov, V; Unterricker, S; Vianden, R

    2000-01-01

    Electric field gradients have been measured at substitutional lattice sites in ternary semiconductors using perturbed gamma - gamma angular correlation spectroscopy. The experimental results for A/sup I/B/sup III/C/sub 2//sup VI/ chalcopyrite structure compounds and Square Operator A/sup II/B/sub 2//sup III/C/sub 4//sup VI/ defect chalcopyrites are compared with ab-initio calculations. The latter were carried out with the WIEN code that uses the full potential linearized augmented plane wave method within a density functional theory. The agreement between experiment and theory is in most cases very good. Furthermore, the anion displacements in AgGaX/sub 2/- compounds (X: S, Se, Te) have been determined theoretically by determining the minimum of the total energy of the electrons in an elementary cell. (20 refs).

  3. Chalcopyrite semiconductors for quantum well solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Afshar, Maziar; Sadewasser, Sascha; Albert, Juergen; Lehmann, Sebastian; Abou-Ras, Daniel; Lux-Steiner, Martha C. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Berlin (Germany); Marron, David Fuertes [Instituto de Energia Solar - ETSIT, Universidad Politecnica de Madrid, Ciudad Universitaria s.n., 28040 Madrid (Spain); Rockett, Angus A. [Department of Materials Science and Engineering, University of Illinois, 1304 W. Green Street, Urbana, IL 61801 (United States); Raesaenen, Esa [Nanoscience Center, Department of Physics University of Jyvaeskylae, FI-40014 Jyvaeskylae (Finland)

    2011-11-15

    The possibilities of using highly absorbing chalcopyrite semiconductors of the type Cu(In,Ga)Se{sub 2} in a quantum well solar cell structure are explored. Thin alternating layers of 50 nm CuInSe{sub 2} and CuGaSe{sub 2} were grown epitaxially on a GaAs(100) substrate. The optical properties of a resulting structure of three layers indicate charge carrier confinement in the low band gap CuInSe{sub 2} layer. By compositional analysis interdiffusion of In and Ga at the interfaces was found. The compositional profile was converted into a conduction-band diagram, for which the quantization of energy levels was numerically confirmed using the effective-mass approximation. The results provide a promising basis for the future development of chalcopyrite-type quantum well structures and their application, i.e. in quantum well solar cells. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals

    Directory of Open Access Journals (Sweden)

    Parul Chawla

    2014-08-01

    Full Text Available In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO and tri-n-octylphosphine (TOP and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern–Volmer quenching constant (KSV and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor–acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe. Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications.

  5. An insight into the mechanism of charge-transfer of hybrid polymer:ternary/quaternary chalcopyrite colloidal nanocrystals.

    Science.gov (United States)

    Chawla, Parul; Singh, Son; Sharma, Shailesh Narain

    2014-01-01

    In this work, we have demonstrated the structural and optoelectronic properties of the surface of ternary/quaternary (CISe/CIGSe/CZTSe) chalcopyrite nanocrystallites passivated by tri-n-octylphosphine-oxide (TOPO) and tri-n-octylphosphine (TOP) and compared their charge transfer characteristics in the respective polymer: chalcopyrite nanocomposites by dispersing them in poly(3-hexylthiophene) polymer. It has been found that CZTSe nanocrystallites due to their high crystallinity and well-ordered 3-dimensional network in its pristine form exhibit a higher steric- and photo-stability, resistance against coagulation and homogeneity compared to the CISe and CIGSe counterparts. Moreover, CZTSe nanocrystallites display efficient photoluminescence quenching as evident from the high value of the Stern-Volmer quenching constant (K SV) and eventually higher charge transfer efficiency in their respective polymer P3HT:CZTSe composites. We modelled the dependency of the charge transfer from the donor and the charge separation mechanism across the donor-acceptor interface from the extent of crystallinity of the chalcopyrite semiconductors (CISe/CIGSe/CZTSe). Quaternary CZTSe chalcopyrites with their high crystallinity and controlled morphology in conjunction with regioregular P3HT polymer is an attractive candidate for hybrid solar cells applications.

  6. Bond charges and electronic charge transfer in ternary semiconductors

    International Nuclear Information System (INIS)

    Pietsch, U.

    1986-01-01

    By means of a simple molecule-theoretic model of 'linear superposition of two-electron molecules' the bond charges between nearest neighbours and the effective charges of ions are calculated for ternary zinc-blende structure alloys as well as chalcopyrite semiconductors. Taking into account both, the charge transfer among the ions caused by the differences of electronegativities of atoms used and between the bonds created by the internal stress of the lattice a nearly unvaried averaged bond charge amount of the alloy is found, but rather dramatically changed local bond charge parameters in comparison with the respective values of binary compounds used. This fact should influence the noncentral force interaction in such semiconductors. (author)

  7. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    International Nuclear Information System (INIS)

    Stephan, Christiane

    2011-01-01

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB III C VI 2 (B III = In, Ga and C VI = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB III C VI 2 compound semiconductors. The study is done on reference powder samples with well determined chemical composition and using advanced diffraction techniques

  8. Structural trends in off stoichiometric chalcopyrite type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Stephan, Christiane

    2011-03-15

    Energy supply is one of the most controversial topics that are currently discussed in our global community. Most of the energy delivered to the customer today has its origin in fossil and nuclear power plants. Indefinable risks and the radioactive waste repository problem of the latter as well as the global scarcity of fossil resources cause the renewable energies to grow more and more important for achieving sustainability. The main renewable energy sources are wind power, hydroelectric power and solar energy. On the photovoltaic (PV) market different materials are competing as part of different kinds of technologies, with the largest contribution still coming from wafer based crystalline silicon solar cells (95 %). Until now thin film solar cells only contribute a small portion to the whole PV market, but large capacities are under construction. Thin film photovoltaic shows a number of advantages in comparison to wafer based crystalline silicon PV. Among these material usage and production cost reduction are two prominent examples. The type of PV materials, which are analyzed in this work, are high potential compounds that are widely used as absorber layer in thin film solar cells. These are compound semiconductors of the type CuB{sup III}C{sup VI}{sub 2} (B{sup III} = In, Ga and C{sup VI} = Se, S). Several years of research have already gone into understanding the efficiency limiting factors for solar cell devices fabricated from this compound. Most of the studies concerning electronic defects are done by spectroscopic methods mostly performed using thin films from different kinds of synthesis, without any real knowledge regarding the structural origin of these defects. This work shows a systematic fundamental structural study of intrinsic point defects that are present within the material at various compositions in CuB{sup III}C{sup VI}{sub 2} compound semiconductors. The study is done on reference powder samples with well determined chemical composition and

  9. ANALYSIS OF A DATA BASE OF CHALCOPYRITE SEMICONDUCTORS IN 2 AND 3 DIMENSIONS

    Directory of Open Access Journals (Sweden)

    A. M. Ferouani

    2015-07-01

    Full Text Available  The analysis of the data is currently, in the statisticians, the object of a true phenomenon of mode, characterized at the same time by the passion and the rejection. ¶To determine the characteristics of a whole of data is obviously not an end in itself, but this lapse of memory is unfortunate because the type of data available always influences the direction of research. ¶The factorial analysis in normalized principal components (PCA, is particularly adapted to the reduction of tables of measurements, where one generally works on a matrix of correlation between characters. ¶In this article we will report our results of analysis into 2 and 3 dimensions of the molecular weight and energy of plasmon of semiconductor chalcopyrites by using what one call the datamining materials. ¶All information was presented in the tables envisaged by an ACP method of the semiconductors étudiés. L' analyzes factorial substitutes for primitive measurements of new variables or factors (which are linear combinations of the primitive variables with the help of which it is thus possible to optimize the visualization of the data in a restricted number of figures.Large at the modo we present, the results related to the development of ¶new approaches of Datamining, Analysis in principal components (ACP, of the data-processing techniques which were applied to semiconductors and ¶combined with metals to predict new materials or ultra stable coatings.¶ ¶       

  10. The role of In in III-nitride ternary semiconductors

    CERN Multimedia

    Redondo cubero, A

    This proposal aims to study the role of In in the outstanding efficiency of luminescent devices based on group III-nitride ternary semiconductors. To study the microscopic environments of In in GaInN and AlInN, Perturbed Angular Correlation (PAC) experiments will be performed using the PAC-probes $^{111m}$Cd($^{111}$Cd), $^{115}$Cd($^{115}$In) and $^{117}$Cd($^{117}$In). Temperature dependent PAC measurements using the $^{111}$In($^{111}$Cd) probe indicated that In in GaN and AlN forms a complex with a defect, possibly a nitrogen vacancy (V$_{N}$), which is stable up to high temperatures and might be involved in the luminescence mechanisms. Analysing these results two questions arose: \\\\ \\\\1. Does the fact that the actual measurement is performed with the daughter nucleus $^{111}$Cd (being an acceptor) influence the probe-defect interaction? This question can be answered by performing measurements with the complementary probe $^{117}$Cd($^{117}$In). \\\\ \\\\ 2. What is the significance of $\\textit{a...

  11. Electronic structure of semiconductor thin films (chalcopyrites) as absorbermaterials for thin film solar cells

    International Nuclear Information System (INIS)

    Lehmann, Carsten

    2007-01-01

    The objective of this work was to determine for the first time the band structure of CuInS 2 . For this purpose a new GSMBE process with TBDS as sulphur precursor was established to prevent the use of elemental sulphur in an UHV system. Additionally to the deposited films a cleave surface was prepared. The samples were characterized in situ by XPS/UPS and LEED. XRD and SEM were used for further ex situ investigations. The band structure was determined by ARUPS using synchrotron light. CuInS(001) and CuInS 2 (112) were deposited on Si and GaAs. The deposition of CuInS 2 on GaAs showed a strong dependence on the existing surface reconstruction. A 2 x 1 reconstruction of GaAs(001) yielded CuInS 2 (001) films featuring terraces. A deposition on 2 x 2 reconstructed GaAs(111)A surfaces led to a facetted CuInS 2 surface. On sulphur-passivated non-reconstructed GaAs(111)B a deposition of chalcopyrite ordered CuInS 2 free of facets was possible. On the surface of Cu-rich CuInS 2 films CuS crystallites formed. This yields ARUPS spectra showing the electronic stucture of CuInS 2 superimposed by non-dispergative states of the polycrystalline CuS segregations. The effective hole masses were derived from the k vertical stroke vertical stroke measurements. Finally the results of this work showed that the use of a (111) substrate leads to domain formation of the deposited CuInS 2 (112) films. Thus ARUPS spectra of such films show a superposition of the band structures along different directions. (orig.)

  12. First-principles study of structural, electronic, linear and nonlinear optical properties of Ga{2}PSb ternary chalcopyrite

    Science.gov (United States)

    Ouahrani, T.; Reshak, A. H.; de La Roza, A. Otero; Mebrouki, M.; Luaña, V.; Khenata, R.; Amrani, B.

    2009-12-01

    We report results from first-principles density functional calculations using the full-potential linear augmented plane wave (FP-LAPW) method. The generalized gradient approximation (GGA) and the Engel-Vosko-generalized gradient approximation (EV-GGA) were used for the exchange-correlation energy of the structural, electronic, linear and nonlinear optical properties of the chalcopyrite Ga2PSb compound. The valence band maximum (VBM) is located at the Γv point, and the conduction band minimum (CBM) is located at the Γc point, resulting in a direct band gap of about 0.365 eV for GGA and 0.83 eV for EV-GGA. In comparison with the experimental one (1.2 eV) we found that EV-GGA calculation gives energy gap in reasonable agreement with the experiment. The spin orbit coupling has marginal influence on the optical properties. The ground state quantities such as lattice parameters (a, c and u), bulk modules B and its pressure derivative B^primeare evaluated.

  13. Thermodynamics and phase equilibria of ternary systems relevant to contact materials for compound semiconductors

    International Nuclear Information System (INIS)

    Ipser, H.; Richter, K.; Micke, K.

    1997-01-01

    In order to investigate the stability of ohmic contacts to compound semiconductors, it is necessary to know the phase equilibria in the corresponding multi-component systems. We are currently studying the phase equilibria and thermophysical properties of several ternary systems which are of interest in view of the use of nickel, palladium and platinum as contact materials for GaSb and InSb compound semiconductors: Ga-Ni-Sb, In-Ni-Sb, Ga-Pd-Sb and Ga-Pt-Sb. Phase equilibria are investigated by thermal analyses, X-ray powder diffraction methods as well as electron microprobe analysis. Thermodynamic properties are derived from vapour pressure measurements using an isopiestic method. It is planned to combine all information on phase equilibria and thermochemistry for the ternary and the limiting binary systems to perform an optimization of the ternary systems by computer calculations using standard software. (author)

  14. Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment

    Science.gov (United States)

    Su, Ching-Hua

    2014-01-01

    A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). There are two sections of the flight experiment: (I) crystal growth of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT) and (II) melt growth of CdZnTe by directional solidification. The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  15. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya; Ahmed, Ghada H.; Alarousu, Erkki; Parida, Manas R.; Abdelhady, Ahmed L.; Bakr, Osman; Mohammed, Omar F.

    2015-01-01

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class

  16. The structural, elastic, electronic and dynamical properties of chalcopyrite semiconductor BeGeAs{sub 2} from first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Ciftci, Yasemin Oe. [Gazi University Teknikokullar, Department of Physics, Faculty of Sciences, Ankara (Turkey); Evecen, Meryem; Aldirmaz, Emine [Amasya University, Department of Physics, Faculty of Arts and Sciences, Amasya (Turkey)

    2017-01-15

    First-principles calculations for the structural, elastic, electronic and vibrational properties of BeGeAs{sub 2} with chalcopyrite structure have been reported in the frame work of the density functional theory. The calculated ground state properties are in good agreement with the available data. By considering the electronic band structure and electronic density of states calculation, it is found that this compound is a semiconductor which confirmed the previous work. Single-crystal elastic constants and related properties such as Young's modulus, Poisson ratio, shear modulus and bulk modulus have been predicted using the stress-finite strain technique. It can be seen from the calculated elastic constants that this compound is mechanically stable in the chalcopyrite structure. Pressure dependences of elastic constants and band gap are also reported. Finally, the phonon dispersion curves and total and partial density of states were calculated and discussed. The calculated phonon frequencies BeGeAs{sub 2} are positive, indicating the dynamical stability of the studied compound. (orig.)

  17. Prediction of electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor: an ab-initio study

    Science.gov (United States)

    Mayengbam, Rishikanta; Tripathy, S. K.; Pandey, B. P.

    2018-03-01

    In this paper, we have investigated the structural, electronic and optical properties of ZnAl2Te4 defect chalcopyrite semiconductor using generalized gradient approximation (GGA) within density functional theory (DFT). We have calculated the optimized lattice constants (a and c) and compared with the available experimental values. The optimized lattice constants have been used to calculate the energy band gap and found to be 1.57 eV. The partial density of states and total density of states have been discussed in detail. The frequency dependent dielectric constant and refractive index have been calculated and plotted in the energy range 0-13 eV. All the above parameters have been compared with the available experimental and theoretical values and found good agreement between them.

  18. Defect formation energies and homogeneity ranges of rock salt-, pyrite-, chalcopyrite- and molybdenite-type compound semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Fiechter, S. [Hahn-Meitner-Institut, Glienicker Strasse 100, Berlin D-14109 (Germany)

    2004-07-01

    Employing the generalisation of Van Vechten's cavity model, formation energies of neutral point defects in pyrites (FeS{sub 2}, RuS{sub 2}), chalcopyrites (II-IV-V{sub 2} and I-III-VI{sub 2}) as well as molybdenites (MoS{sub 2}, WS{sub 2}) have been estimated. As input parameters the fundamental band gaps, work functions, electron affinities, surface energies, coordination numbers, covalent or ionic radii and unit cell parameters were used. The values calculated for tetrahedrally and octahedrally coordinated compounds agreed well with measured values. The data obtained can be used to calculate point defect concentrations and homogeneity ranges as a function of partial pressure and temperature. Introducing charged vacancies, the conductivity type can be predicted.

  19. Defects in Cu(In,Ga)Se{sub 2} chalcopyrite semiconductors: a comparative study of material properties, defect states, and photovoltaic performance

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Qing; Gunawan, Oki; Copel, Matthew; Reuter, Kathleen B; Chey, S Jay; Mitzi, David B [IBM T.J. Watson Research Center, Yorktown Heights, NY (United States); Deline, Vaughn R [IBM Almaden Resesarch Center, San Jose, CA (United States)

    2011-10-15

    Understanding defects in Cu(In,Ga)(Se,S){sub 2} (CIGS), especially correlating changes in the film formation process with differences in material properties, photovoltaic (PV) device performance, and defect levels extracted from admittance spectroscopy, is a critical but challenging undertaking due to the complex nature of this polycrystalline compound semiconductor. Here we present a systematic comparative study wherein varying defect density levels in CIGS films were intentionally induced by growing CIGS grains using different selenium activity levels. Material characterization results by techniques including X-ray diffraction, scanning electron microscopy, transmission electron microscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy, and medium energy ion scattering indicate that this process variation, although not significantly affecting CIGS grain structure, crystal orientation, or bulk composition, leads to enhanced formation of a defective chalcopyrite layer with high density of indium or gallium at copper antisite defects ((In, Ga){sub Cu}) near the CIGS surface, for CIGS films grown with insufficient selenium supply. This defective layer or the film growth conditions associated with it is further linked with observed current-voltage characteristics, including rollover and crossover behavior, and a defect state at around 110 meV (generally denoted as the N1 defect) commonly observed in admittance spectroscopy. The impact of the (In, Ga){sub Cu} defects on device PV performance is also established. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Correlation between electronic structure and energy band in Eu-doped CuInTe2 semiconductor compound with chalcopyrite structure

    Institute of Scientific and Technical Information of China (English)

    Tai Wang; Yong-Quan Guo; Shuai Li

    2017-01-01

    The Eu-doped Cu(In,Eu)Te2 semiconductors with chalcopyrite structures are promising materials for their applications in the absorption layer for thin-film solar cells due to their wider band-gaps and better optical properties than those of CulnTe2.In this paper,the Eu-doped CulnTe2 (Culn1-xEuxTe2,x =0,0.1,0.2,0.3) are studied systemically based on the empirical electron theory (EET).The studies cover crystal structures,bonding regularities,cohesive energies,energy levels,and valence electron structures.The theoretical values fit the experimental results very well.The physical mechanism of a broadened band-gap induced by Eu doping into CuInTe2 is the transitions between different hybridization energy levels induced by electron hopping between s and d orbitals and the transformations from the lattice electrons to valence electrons for Cu and In ions.The research results reveal that the photovoltaic effect induces the increase of lattice electrons of In and causes the electric resistivity to decrease.The Eu doping into CuInTe2 mainly influences the transition between different hybridization energy levels for Cu atoms,which shows that the 3d electron numbers of Cu atoms change before and after Eu doping.In single phase CuIn1-xEuxTe2,the number of valence electrons changes regularly with increasing Eu content,and the calculated band gap Eg also increases,which implies that the optical properties of Eu-doped CuIn1-xEuxTe2 are improved.

  1. Surface properties and photocatalytic activity of KTaO3, CdS, MoS2 semiconductors and their binary and ternary semiconductor composites.

    Science.gov (United States)

    Bajorowicz, Beata; Cybula, Anna; Winiarski, Michał J; Klimczuk, Tomasz; Zaleska, Adriana

    2014-09-24

    Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD), UV-Vis diffuse reflectance spectroscopy (DRS), scanning electron microscopy (SEM), Brunauer-Emmett-Teller (BET) specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  2. Mechanical properties of some binary, ternary and quaternary III-V compound semiconductor alloys

    International Nuclear Information System (INIS)

    Navamathavan, R.; Arivuoli, D.; Attolini, G.; Pelosi, C.; Choi, Chi Kyu

    2007-01-01

    Vicker's microindentation tests have been carried out on InP/InP, GaAs/InP, InGaAs/InP and InGaAsP/InP III-V compound semiconductor alloys. The detailed mechanical properties of these binary, ternary and quaternary epilayers were determined from the indentation experiments. Microindentation studies of (1 1 1) GaAs/InP both A and B faces show that the hardness value increases with load and attains a constant for further increase in load and the microhardness values were found to lie between 3.5 and 4.0 GPa. The microhardness values of InGaAs/InP epilayers with different thickness were found to lie between 3.93 and 4.312 GPa. The microhardness values of InGaAsP/InP with different elemental composition were found to lie between 5.08 and 5.73 GPa. The results show that the hardness of the quaternary alloy drastically increases, the reason may be that the increase in As concentration hardens the lattice when phosphorous concentration is less and hardness decreases when phosphorous is increased. It was interestingly observed that the hardness value increases as we proceed from binary to quaternary III-V compound semiconductor alloys

  3. Electronic and optical properties of defect CdIn_2Te_4 chalcopyrite semiconductor: A first principle approach

    International Nuclear Information System (INIS)

    Mishra, S.; Ganguli, B.

    2016-01-01

    We present detailed study of structural, electronic and optical properties of CdIn_2Te_4 compound. The calculations are carried out using Density Functional theory based Tight Binding Linear Muffin Tin Orbital method. The compound is found to be direct band gap semiconductor with a band gap of 1.03 eV. The band gap is within the limit of LDA underestimation. The calculated structural parameters agree well with the available experimental values. We find a decrements of 9.6% in band gap and significant effects on overall electronic and optical properties due to structural distortions. These effects on optical properties come mainly from the change in transition probability. An-isotropic nature of optical properties get enhanced due to structural distortion. The Calculated real & imaginary parts of dielectric constant and static dielectric constant agree well with the available experimental result. - Highlights: • We present ab-initio calculations of electronic & optical properties of CdIn_2Te_4. • Band gap get reduced by 9.6% due to structural distortion. • Structural distortion has significant effects on optical properties. • Anisotropic nature of optical response functions get enhanced by structural distortion. • Calculated dielectric constant agrees with experimental value.

  4. Theoretical prediction and experimental confirmation of unusual ternary ordered semiconductor compounds in Sr-Pb-S system.

    Science.gov (United States)

    Hao, Shiqiang; Zhao, Li-Dong; Chen, Chang-Qiang; Dravid, Vinayak P; Kanatzidis, Mercouri G; Wolverton, Christopher M

    2014-01-29

    We examine the thermodynamics of phase separation and ordering in the ternary Ca(x)Pb(1-x)S and Sr(x)Pb(1-x)S systems by density-functional theory combined with a cluster expansion and Monte Carlo simulations. Similar to most other ternary III-V or IV-VI semiconductor alloys, we find that bulk phase separation is thermodynamically preferred for PbS-CaS. However, we predict the surprising existence of stable, ordered ternary compounds in the PbS-SrS system. These phases are previously unreported ordered rocksalt-based compounds: SrPb3S4, SrPbS2, and Sr3PbS4. The stability of these predicted ordered phases is confirmed by transmission electron microscopy observations and band gap measurements. We believe this work paves the way for a combined theory-experiment approach to decipher complex phase relations in multicomponent chalcogenide systems.

  5. Synthesis and characterization of thermally evaporated Cu2SnSe3 ternary semiconductor

    Science.gov (United States)

    Hamdani, K.; Chaouche, M.; Benabdeslem, M.; Bechiri, L.; Benslim, N.; Amara, A.; Portier, X.; Bououdina, M.; Otmani, A.; Marie, P.

    2014-11-01

    Copper Tin Selenide (CuSnSe) powder was mechanically alloyed by high energy planetary ball milling, starting from elemental powders. Synthesis time and velocity have been optimized to produce Cu2SnSe3 materials. Thin films were prepared by thermal evaporation on Corning glass substrate at Ts = 300 °C. The structural, compositional, morphological and optical properties of the synthesized semiconductor have been analyzed by X-ray diffraction (XRD), energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and transmission electron microscopy. The analyzed powder exhibited a cubic crystal structure, with the presence of Cu2Se as a secondary phase. On the other hand, the deposited films showed a cubic Cu2SnSe3 ternary phase and extra peaks belonging to some binary compounds. Furthermore, optical measurements showed that the deposited layers have a relatively high absorption coefficient of 105 cm-1 and present a band gap of 0.94 eV.

  6. Surface Properties and Photocatalytic Activity of KTaO3, CdS, MoS2 Semiconductors and Their Binary and Ternary Semiconductor Composites

    Directory of Open Access Journals (Sweden)

    Beata Bajorowicz

    2014-09-01

    Full Text Available Single semiconductors such as KTaO3, CdS MoS2 or their precursor solutions were combined to form novel binary and ternary semiconductor nanocomposites by the calcination or by the hydro/solvothermal mixed solutions methods, respectively. The aim of this work was to study the influence of preparation method as well as type and amount of the composite components on the surface properties and photocatalytic activity of the new semiconducting photoactive materials. We presented different binary and ternary combinations of the above semiconductors for phenol and toluene photocatalytic degradation and characterized by X-ray powder diffraction (XRD, UV-Vis diffuse reflectance spectroscopy (DRS, scanning electron microscopy (SEM, Brunauer–Emmett–Teller (BET specific surface area and porosity. The results showed that loading MoS2 onto CdS as well as loading CdS onto KTaO3 significantly enhanced absorption properties as compared with single semiconductors. The highest photocatalytic activity in phenol degradation reaction under both UV-Vis and visible light irradiation and very good stability in toluene removal was observed for ternary hybrid obtained by calcination of KTaO3, CdS, MoS2 powders at the 10:5:1 molar ratio. Enhanced photoactivity could be related to the two-photon excitation in KTaO3-CdS-MoS2 composite under UV-Vis and/or to additional presence of CdMoO4 working as co-catalyst.

  7. CdS_xTe_1_-_x ternary semiconductors band gaps calculation using ground state and GW approximations

    International Nuclear Information System (INIS)

    Kheloufi, Nawal; Bouzid, Abderrazak

    2016-01-01

    We present band gap calculations of zinc-blende ternary CdS_xTe_1_-_x semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd"+"2"0 pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd"2"0"+ pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd"1"2"+ and the LDA within Cd"2"0"+ pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS_xTe_1_-_x compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  8. Direct femtosecond observation of charge carrier recombination in ternary semiconductor nanocrystals: The effect of composition and shelling

    KAUST Repository

    Bose, Riya

    2015-02-12

    Heavy-metal free ternary semiconductor nanocrystals are emerging as key materials in photoactive applications. However, the relative abundance of intra-bandgap defect states and lack of understanding of their origins within this class of nanocrystals are major factors limiting their applicability. To remove these undesirable defect states which considerably shorten the lifetimes of photogenerated excited carriers, a detailed understanding about their origin and nature is required. In this report, we monitor the ultrafast charge carrier dynamics of CuInS2 (CIS), CuInSSe (CISSe), and CuInSe2 (CISe) nanocrystals, before and after ZnS shelling, using state-of-the-art time-resolved laser spectroscopy with broadband capabilities. The experimental results demonstrate the presence of both electron and hole trapping intra-bandgap states in the nanocrystals which can be removed significantly by ZnS shelling, and the carrier dynamics is slowed down. Another important observation remains the reduction of carrier lifetime in the presence of Se, and the shelling strategy is observed to be less effective at suppressing trap states. This study provides quantitative physical insights into the role of anion composition and shelling on the charge carrier dynamics in ternary CIS, CISSe, and CISe nanocrystals which are essential to improve their applicability for photovoltaics and optoelectronics.

  9. Wide-Gap Chalcopyrites

    CERN Document Server

    Siebentritt, Susanne

    2006-01-01

    Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of the materials, the electronic structure and the transport through interfaces and grain boundaries, the formation of the electric field in a solar cell, the mechanisms and suppression of recombination, the role of inhomogeneities, and the technological role of wide-gap chalcopyrites.

  10. Electronic structure of semiconductor thin films (chalcopyrites) as absorbermaterials for thin film solar cells; Elektronische Struktur duenner Halbleiterfilme (Chalkopyrite) als Absorbermaterialien fuer Duennschichtsolarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Lehmann, Carsten

    2007-12-11

    The objective of this work was to determine for the first time the band structure of CuInS{sub 2}. For this purpose a new GSMBE process with TBDS as sulphur precursor was established to prevent the use of elemental sulphur in an UHV system. Additionally to the deposited films a cleave surface was prepared. The samples were characterized in situ by XPS/UPS and LEED. XRD and SEM were used for further ex situ investigations. The band structure was determined by ARUPS using synchrotron light. CuInS(001) and CuInS{sub 2}(112) were deposited on Si and GaAs. The deposition of CuInS{sub 2} on GaAs showed a strong dependence on the existing surface reconstruction. A 2 x 1 reconstruction of GaAs(001) yielded CuInS{sub 2}(001) films featuring terraces. A deposition on 2 x 2 reconstructed GaAs(111)A surfaces led to a facetted CuInS{sub 2} surface. On sulphur-passivated non-reconstructed GaAs(111)B a deposition of chalcopyrite ordered CuInS{sub 2} free of facets was possible. On the surface of Cu-rich CuInS{sub 2} films CuS crystallites formed. This yields ARUPS spectra showing the electronic stucture of CuInS{sub 2} superimposed by non-dispergative states of the polycrystalline CuS segregations. The effective hole masses were derived from the k {sub vertical} {sub stroke} {sub vertical} {sub stroke} measurements. Finally the results of this work showed that the use of a (111) substrate leads to domain formation of the deposited CuInS{sub 2}(112) films. Thus ARUPS spectra of such films show a superposition of the band structures along different directions. (orig.)

  11. Studies of optical properties and applications of some mixed ternary semiconductors

    International Nuclear Information System (INIS)

    Ghosh, P.S.; Ghosh, D.K.; Samanta, L.K.

    1989-01-01

    Refractive indices of some mixed compound semiconductors below the bandgap are presented on the basis of some fundamental parameters and the effect of lattice mismatch on the refractive index step is also studied. The results help to design a variety of opto-electronic devices for the use in optical fiber communication and heterostructure lasers. The calculated values agree well with available experimental values thus justifying the approach. (author)

  12. Trialkylphosphine-stabilized copper(I) gallium(III) phenylchalcogenolate complexes: crystal structures and generation of ternary semiconductors by thermolysis.

    Science.gov (United States)

    Kluge, Oliver; Krautscheid, Harald

    2012-06-18

    A series of organometallic trialkylphosphine-stabilized copper gallium phenylchalcogenolate complexes [(R(3)P)(m)Cu(n)Me(2-x)Ga(EPh)(n+x+1)] (R = Me, Et, (i)Pr, (t)Bu; E = S, Se, Te; x = 0, 1) has been prepared and structurally characterized by X-ray diffraction. From their molecular structures three groups of compounds can be distinguished: ionic compounds, ring systems, and cage structures. All these complexes contain one gallium atom bound to one or two methyl groups, whereas the number of copper atoms, and therefore the nuclearity of the complexes, is variable and depends mainly on size and amount of phosphine ligand used in synthesis. The Ga-E bonds are relatively rigid, in contrast to flexible Cu-E bonds. The lengths of the latter are controlled by the coordination number and steric influences. The Ga-E bond lengths depend systematically on the number of methyl groups bound to the gallium atom, with somewhat shorter bonds in monomethyl compounds compared to dimethyl compounds. Quantum chemical computations reproduce this trend and show furthermore that the rotation of one phenyl group around the Ga-E bond is a low energy process with two distinct minima, corresponding to two different conformations found experimentally. Mixtures of different types of chalcogen atoms on molecular scale are possible, and then ligand exchange reactions in solution lead to mixed site occupation. In thermogravimetric studies the complexes were converted into the ternary semiconductors CuGaE(2). The thermolysis reaction is completed at temperatures between 250 and 400 °C, typically with lower temperatures for the heavier chalcogens. Because of significant release of Me(3)Ga during the thermolysis process, and especially in case of copper excess in the precursor complexes, binary copper chalcogenides are obtained as additional thermolysis products. Quaternary semiconductors can be obtained from mixed chalcogen precursors.

  13. Two Dimensional Effective Electron Mass at the Fermi Level in Quantum Wells of III-V, Ternary and Quaternary Semiconductors.

    Science.gov (United States)

    Chakrabarti, S; Chatterjee, B; Debbarma, S; Ghatak, K P

    2015-09-01

    In this paper we study the influence of strong electric field on the two dimensional (2D)effective electron mass (EEM) at the Fermi level in quantum wells of III-V, ternary and quaternary semiconductors within the framework of k x p formalism by formulating a new 2D electron energy spectrum. It appears taking quantum wells of InSb, InAs, Hg(1-x)Cd(x)Te and In(1-x)Ga(x)As(1-y)P(y) lattice matched to InP as examples that the EEM increases with decreasing film thickness, increasing electric field and increases with increasing surface electron concentration exhibiting spikey oscillations because of the crossing over of the Fermi level by the quantized level in quantum wells and the quantized oscillation occurs when the Fermi energy touches the sub-band energy. The electric field makes the mass quantum number dependent and the oscillatory mass introduces quantum number dependent mass anisotropy in addition to energy. The EEM increases with decreasing alloy composition where the variations are totally band structure dependent. Under certain limiting conditions all the results for all the cases get simplified into the well-known parabolic energy bands and thus confirming the compatibility test. The content of this paper finds three applications in the fields of nano-science and technology.

  14. Novel red-emission of ternary ZnCdSe semiconductor nanocrystals

    Science.gov (United States)

    Chung, Shu-Ru; Wang, Kuan-Wen; Chen, Hong-Shuo; Chen, Hong-Hong

    2015-02-01

    The effect of chain lengths of fatty acids on the physical properties of CdSe and ZnCdSe semiconductor nanocrystals (NCs) synthesized by the colloidal chemistry procedure is investigated. The fatty acids, lauric acid (LA), and stearic acid (SA), with different lengths of carbon chains, are used to prepare CdSe and ZnCdSe NCs when hexyldecylamine (HDA) is applied as the sole surfactant. For CdSe-SA and ZnCdSe-SA, they have the same emission wavelength at 592 nm and the same particle size of 3.3 nm; however, their quantum yield (QY) is 75 and 16 %, respectively. In contrast, the emission wavelength of CdSe-LA and ZnCdSe-LA NCs is 609 and 615 nm, the particle size is about 3.5 and 4 nm under the same reaction time, and the QY of them are 33 and 59 %, respectively. The X-ray diffraction pattern shows that ZnCdSe NCs all have the wurtzite structure, and their main peaks are located between those of pure CdSe and ZnSe materials. The main phase of ZnCdSe-SA and ZnCdSe-LA is ZnSe and CdSe, respectively, implying that alloyed ZnCdSe NC can be prepared and ZnSe and CdSe phase can be promoted by SA and LA, respectively. Moreover, the QY of red-emission ZnCdSe-LA is higher than 50 %. These results suggest that the growth rate of CdSe as well as ZnCdSe NC can be enhanced by using LA as complex reagent and HDA as sole surfactant. It is expected that the reported effective synthetic strategy can be developed as a very practical, easy and not time-consuming approach to prepare red emissive NCs with high QY and high reproducibility.

  15. CdS{sub x}Te{sub 1-x} ternary semiconductors band gaps calculation using ground state and GW approximations

    Energy Technology Data Exchange (ETDEWEB)

    Kheloufi, Nawal; Bouzid, Abderrazak, E-mail: a_bouzid34@hotmail.com

    2016-06-25

    We present band gap calculations of zinc-blende ternary CdS{sub x}Te{sub 1-x} semiconductors within the standard DFT and quasiparticle calculations employing pseudopotential method. The DFT, the local density approximation (LDA) and the Generalized Gradient Approximation (GGA) based calculations have given very poor results compared to experimental data. The quasiparticle calculations have been investigated via the one-shot GW approximation. The present paper discuses and confirms the effect of inclusion of the semicore states in the cadmium (Cd) pseudopotential. The obtained GW quasiparticle band gap using Cd{sup +20} pseudopotential has been improved compared to the obtained results from the available pseudopotential without the treatment of semicore states. Our DFT and quasiparticle band gap results are discussed and compared to the available theoretical calculations and experimental data. - Graphical abstract: Band gaps improvement concerning the binary and ternary alloys using the GW approximation and Cd{sup 20+} pseudopotential with others levels of approximations (the LDA and GGA approximation employing the Cd{sup 12+} and the LDA within Cd{sup 20+} pseudopotential). - Highlights: • The direct Γ- Γ and indirect Γ- X and Γ- L bands gaps show a nonlinear behavior when S content is enhanced. • The quasiparticle band gap result for the investigated semiconductors is improved using the GW approximation. • All CdS{sub x}Te{sub 1-x} compounds in all compositions range from 0 to 1 are direct band gap semiconductors.

  16. Novel red-emission of ternary ZnCdSe semiconductor nanocrystals

    Energy Technology Data Exchange (ETDEWEB)

    Chung, Shu-Ru, E-mail: srchung@nfu.edu.tw [National Formosa University, Graduate Institute of Materials Science and Green Energy Engineering (China); Wang, Kuan-Wen [National Central University, Institute of Materials Science and Engineering (China); Chen, Hong-Shuo; Chen, Hong-Hong [National Formosa University, Graduate Institute of Materials Science and Green Energy Engineering (China)

    2015-02-15

    The effect of chain lengths of fatty acids on the physical properties of CdSe and ZnCdSe semiconductor nanocrystals (NCs) synthesized by the colloidal chemistry procedure is investigated. The fatty acids, lauric acid (LA), and stearic acid (SA), with different lengths of carbon chains, are used to prepare CdSe and ZnCdSe NCs when hexyldecylamine (HDA) is applied as the sole surfactant. For CdSe–SA and ZnCdSe–SA, they have the same emission wavelength at 592 nm and the same particle size of 3.3 nm; however, their quantum yield (QY) is 75 and 16 %, respectively. In contrast, the emission wavelength of CdSe–LA and ZnCdSe–LA NCs is 609 and 615 nm, the particle size is about 3.5 and 4 nm under the same reaction time, and the QY of them are 33 and 59 %, respectively. The X-ray diffraction pattern shows that ZnCdSe NCs all have the wurtzite structure, and their main peaks are located between those of pure CdSe and ZnSe materials. The main phase of ZnCdSe–SA and ZnCdSe–LA is ZnSe and CdSe, respectively, implying that alloyed ZnCdSe NC can be prepared and ZnSe and CdSe phase can be promoted by SA and LA, respectively. Moreover, the QY of red-emission ZnCdSe–LA is higher than 50 %. These results suggest that the growth rate of CdSe as well as ZnCdSe NC can be enhanced by using LA as complex reagent and HDA as sole surfactant. It is expected that the reported effective synthetic strategy can be developed as a very practical, easy and not time-consuming approach to prepare red emissive NCs with high QY and high reproducibility.

  17. Novel red-emission of ternary ZnCdSe semiconductor nanocrystals

    International Nuclear Information System (INIS)

    Chung, Shu-Ru; Wang, Kuan-Wen; Chen, Hong-Shuo; Chen, Hong-Hong

    2015-01-01

    The effect of chain lengths of fatty acids on the physical properties of CdSe and ZnCdSe semiconductor nanocrystals (NCs) synthesized by the colloidal chemistry procedure is investigated. The fatty acids, lauric acid (LA), and stearic acid (SA), with different lengths of carbon chains, are used to prepare CdSe and ZnCdSe NCs when hexyldecylamine (HDA) is applied as the sole surfactant. For CdSe–SA and ZnCdSe–SA, they have the same emission wavelength at 592 nm and the same particle size of 3.3 nm; however, their quantum yield (QY) is 75 and 16 %, respectively. In contrast, the emission wavelength of CdSe–LA and ZnCdSe–LA NCs is 609 and 615 nm, the particle size is about 3.5 and 4 nm under the same reaction time, and the QY of them are 33 and 59 %, respectively. The X-ray diffraction pattern shows that ZnCdSe NCs all have the wurtzite structure, and their main peaks are located between those of pure CdSe and ZnSe materials. The main phase of ZnCdSe–SA and ZnCdSe–LA is ZnSe and CdSe, respectively, implying that alloyed ZnCdSe NC can be prepared and ZnSe and CdSe phase can be promoted by SA and LA, respectively. Moreover, the QY of red-emission ZnCdSe–LA is higher than 50 %. These results suggest that the growth rate of CdSe as well as ZnCdSe NC can be enhanced by using LA as complex reagent and HDA as sole surfactant. It is expected that the reported effective synthetic strategy can be developed as a very practical, easy and not time-consuming approach to prepare red emissive NCs with high QY and high reproducibility

  18. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  19. Surface characterization of activated chalcopyrite particles via the FLSmidth ROL process. Part 1: Electron microscope investigations

    DEFF Research Database (Denmark)

    Karcz, Adam Paul; Damø, Anne Juul; Illerup, Jytte Boll

    Because of its unique semiconductor properties, the world’s most abundant copper mineral (chalcopyrite) is refractory with respect to atmospheric leaching using traditional ferric sulfate lixiviants. A novel approach to address this issue – conducted at FLSmidth – utilizes a mechanochemical Rapid...... of copper(II) to dope the semiconductor lattice and thereby "activate" the chalcopyrite, thereby reducing leach times below 2 hours (>98% recovery). Because the activation plays a major role in accelerating the leaching step, it is critical to understand the nature of this intermediate and its part...... in the ROL process. The current work presents results from electron microscope investigations of surface-activated particles....

  20. Electron microscope investigations of activated chalcopyrite particles via the FLSmidth® ROL process

    DEFF Research Database (Denmark)

    Karcz, Adam Paul; Damø, Anne Juul; Illerup, Jytte Boll

    2017-01-01

    Because of its unique semiconductor properties, the world’s most abundant copper mineral, chalcopyrite (CuFeS2), is refractory with respect to atmospheric leaching using traditional acidic ferric sulfate lixiviants. FLSmidth® has developed a novel approach manipulating lattice properties of semi.......1 and 5 mol percent of copper (II) to dope the lattice and thereby “activate” chalcopyrite. Since lattice restructuring can have such a dramatic influence on semiconductor reactivity, the associated physico-chemical phenomena are worth studying. In this regard, we investigate the relationship between...... chemical activation and deformation of the chalcopyrite crystal lattice through the use of electron microscopy. Although the activation process took only an hour and the extent of conversion was on the order of a few mol%, the lattice was found to be strained throughout the particle. This paper draws some...

  1. Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport in Low Gravity

    Science.gov (United States)

    Su, Ching-Hua; Ramachandran, N.

    2013-01-01

    Crystals of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, will be grown by physical vapor transport in the Material Science Research Rack (MSRR) on International Space Station (ISS). The objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the crystals grown by vapor transport as results of buoyance-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions.

  2. The dissolution of chalcopyrite in chloride media

    International Nuclear Information System (INIS)

    Ibanez, T.; Velasquez, L.

    2013-01-01

    The aim of this investigation is to determinate the effects of parameters and additives on the kinetics of dissolution of chalcopyrite on moderated conditions by means of dissolutions test with chalcopyrite concentrate and pure chalcopyrite in shake flasks and instrumented stirred reactors. A study of the dissolution of chalcopyrite in chloride solutions has demonstrated that the rate of dissolution of chalcopyrite is strongly dependent on the potential of the solution within a range of 540 to 630 mV (versus SHE). Leaching at pH around 2.5 results in increased rates of copper dissolution suggesting the possibility to keep the solution potential within the range. Both pyrite and silver ions enhance the dissolution of chalcopyrite and this effect increases when both species are present. The MnO 2 has a negative effect on the dissolution increasing the solution potential to values where the rate decreases considerably. (Author)

  3. Energy gaps, effective masses and ionicity of AlxGa1-xSb ternary semiconductor alloys

    Science.gov (United States)

    Bouarissa, N.; Boucenna, M.; Saib, S.; Siddiqui, S. A.

    2017-12-01

    A pseudopotential calculation of the electronic structure of AlxGa1-xSb ternary alloys in the zinc-blende structure has been performed. The compositional dependence of energy gaps, electron and heavy hole effective masses and ionicity of the material system of interest have been examined and discussed. Special attention has been given to the effect of the alloy disorder on the direct (Γ-Γ) bandgap energy. It is found that all features of interest vary monotonically with increasing the Al concentration x. Besides, bandgap bowing parameters and extent of the direct-to-indirect bandgap transition have been determined. Our findings agree generally well with the data reported in the literature. Trends in ionicity are found to be consistent with the Phillips ionicity scale.

  4. Scattering amplitudes and static atomic correction factors for the composition-sensitive 002 reflection in sphalerite ternary III-V and II-VI semiconductors.

    Science.gov (United States)

    Schowalter, M; Müller, K; Rosenauer, A

    2012-01-01

    Modified atomic scattering amplitudes (MASAs), taking into account the redistribution of charge due to bonds, and the respective correction factors considering the effect of static atomic displacements were computed for the chemically sensitive 002 reflection for ternary III-V and II-VI semiconductors. MASAs were derived from computations within the density functional theory formalism. Binary eight-atom unit cells were strained according to each strain state s (thin, intermediate, thick and fully relaxed electron microscopic specimen) and each concentration (x = 0, …, 1 in 0.01 steps), where the lattice parameters for composition x in strain state s were calculated using continuum elasticity theory. The concentration dependence was derived by computing MASAs for each of these binary cells. Correction factors for static atomic displacements were computed from relaxed atom positions by generating 50 × 50 × 50 supercells using the lattice parameter of the eight-atom unit cells. Atoms were randomly distributed according to the required composition. Polynomials were fitted to the composition dependence of the MASAs and the correction factors for the different strain states. Fit parameters are given in the paper.

  5. Bioleaching of two different types of chalcopyrite by Acidithiobacillus ferrooxidans

    Science.gov (United States)

    Dong, Ying-bo; Lin, Hai; Fu, Kai-bin; Xu, Xiao-fang; Zhou, Shan-shan

    2013-02-01

    Two different types of chalcopyrite (pyritic chalcopyrite and porphyry chalcopyrite) were bioleached with Acidithiobacillus ferrooxidans ATF6. The bioleaching of the pyritic chalcopyrite and porphyry chalcopyrite is quite different. The copper extraction reaches 46.96% for the pyritic chalcopyrite after 48-d leaching, but it is only 14.50% for the porphyry chalcopyrite. Proper amounts of initial ferrous ions can improve the efficiency of copper extraction for the two different types of chalcopyrite. The optimum dosage of ferrous ions for the pyritic chalcopyrite and porphyry chalcopyrite is different. The adsorption of ATF6 on the pyritic chalcopyrite and porphyry chalcopyrite was also studied in this paper. It is found that ATF6 is selectively adsorbed by the two different types of chalcopyrite; the higher adsorption onto the pyritic chalcopyrite than the porphyry chalcopyrite leads to the higher copper dissolution rate of the pyritic chalcopyrite. In addition, the zeta-potential of chalcopyrite before and after bioleaching further confirms that ATF6 is more easily adsorbed onto the pyritic chalcopyrite.

  6. Advances in copper-chalcopyrite thin films for solar energy conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kaneshiro, Jess; Gaillard, Nicolas; Rocheleau, Richard; Miller, Eric [Hawaii Natural Energy Institute, University of Hawaii at Manoa, 1680 East-West Road, Post 109, Honolulu, HI 96822 (United States)

    2010-01-15

    Promising alternatives to crystalline silicon as the basic building block of solar cells include copper-chalcopyrite thin films such as copper indium gallium diselenide, a class of thin films exhibiting bandgap-tunable semiconductor behavior, direct bandgaps and high absorption coefficients. These properties allow for the development of novel solar-energy conversion configurations like ultra-high efficiency multi-junction solar cells utilizing combinations of photovoltaic and photoelectrochemical junctions for hydrogen production. This paper discusses the current worldwide status as well as the development and optimization of copper-chalcopyrite thin films deposited onto various substrate types for different photovoltaic and photoelectrochemical applications at the Hawaii Natural Energy Institute. (author)

  7. Optical, Electrical and Photocatalytic Properties of the Ternary Semiconductors ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS

    Directory of Open Access Journals (Sweden)

    Sandra Andrea Mayén-Hernández

    2014-01-01

    Full Text Available The effects of vacuum annealing at different temperatures on the optical, electrical and photocatalytic properties of polycrystalline and amorphous thin films of the ternary semiconductor alloys ZnxCd1-xS, CuxCd1-xS and CuxZn1-xS were investigated in stacks of binary semiconductors obtained by chemical bath deposition. The electrical properties were measured at room temperature using a four-contact probe in the Van der Pauw configuration. The energy band gap of the films varied from 2.30 to 2.85 eV. The photocatalytic activity of the semiconductor thin films was evaluated by the degradation of an aqueous methylene blue solution. The thin film of ZnxCd1-xS annealed under vacuum at 300°C exhibited the highest photocatalytic activity.

  8. Refractive index of ternary and quaternary compound semiconductors below the fundamental absorption edge: Linear and nonlinear effects

    International Nuclear Information System (INIS)

    Jensen, B.; Torabi, A.

    1985-01-01

    The index of refraction n is calculated as a function of frequency and mole fraction x for the following compounds: Hg/sub l-x/Cd/sub x/Te, Al/sub x/Ga/sub l-x/As, and In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ lattice matched to InP. Lattice matching of In/sub l-x/Ga/sub x/As/sub y/P/sub l-y/ to InP requires that x = 0.466 y. The theoretical result for the refractive index is obtained from a quantum mechanical calculation of the dielectric constant of a compound semiconductor. It is given in terms of the basic material parameters of band gap energy, effective electron mass m/sub n/, effective heavy hole mass m/sub rho/, spin orbit splitting energy, lattice constant, and carrier concentration n/sub e/ or rho for n-type or rho-type materials, respectively. If these quantities are known as functions of mole fraction x, there are no adjustable parameters involved. A negative change in the refractive index near the fundamental absorption edge is predicted on passing radiation through a crystal if the change in carrier concentration of the initially unoccupied conduction band is assumed proportional to internal intensity I. Comparison of theory with experimental data is given

  9. Efficient visible-light photocatalytic activity by band alignment in mesoporous ternary polyoxometalate-Ag2S-CdS semiconductors

    Science.gov (United States)

    Kornarakis, I.; Lykakis, I. N.; Vordos, N.; Armatas, G. S.

    2014-07-01

    Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster anions with different reduction potentials, such as PW12O403-, SiW12O404- and PMo12O403-, were employed as electron acceptors in these ternary heterojunction photocatalysts. Characterization by small-angle X-ray scattering, X-ray diffraction, transmission electron microscopy and N2 physisorption measurements showed hexagonal arrays of POM-Ag2S-CdS hybrid nanorods with large internal BET surface areas and uniform mesopores. The Keggin structure of the incorporated POM clusters was also verified by elemental X-ray spectroscopy microanalysis, infrared and diffuse-reflectance ultraviolet-visible spectroscopy. These new porous materials were implemented as visible-light-driven photocatalysts, displaying exceptional high activity in aerobic oxidation of various para-substituted benzyl alcohols to the corresponding carbonyl compounds. Our experiments show that the spatial separation of photogenerated electrons and holes at CdS through the potential gradient along the CdS-Ag2S-POM interfaces is responsible for the increased photocatalytic activity.Porous multicomponent semiconductor materials show improved photocatalytic performance due to the large and accessible pore surface area and high charge separation efficiency. Here we report the synthesis of well-ordered porous polyoxometalate (POM)-Ag2S-CdS hybrid mesostructures featuring a controllable composition and high photocatalytic activity via a two-step hard-templating and topotactic ion-exchange chemical process. Ag2S compounds and polyoxometalate cluster

  10. Ternary semiconductors NiZrSn and CoZrBi with half-Heusler structure: A first-principles study

    Science.gov (United States)

    Fiedler, Gregor; Kratzer, Peter

    2016-08-01

    The ternary semiconductors NiZrSn and CoZrBi with C 1b crystal structure are introduced by calculating their basic structural, electronic, and phononic properties using density functional theory. Both the gradient-corrected PBE functional and the hybrid functional HSE06 are employed. While NiZrSn is found to be a small-band-gap semiconductor (Eg=0.46 eV in PBE and 0.60 eV in HSE06), CoZrBi has a band gap of 1.01 eV in PBE (1.34 eV in HSE06). Moreover, effective masses and deformation potentials are reported. In both materials A B C , the intrinsic point defects introduced by species A (Ni or Co) are calculated. The Co-induced defects in CoZrBi are found to have a higher formation energy compared to Ni-induced defects in NiZrSn. The interstitial Ni atom (Nii) as well as the VNiNii complex introduce defect states in the band gap, whereas the Ni vacancy (VNi) only reduces the size of the band gap. While Nii is electrically active and may act as a donor, the other two types of defects may compensate extrinsic doping. In CoZrBi, only the VCoCoi complex introduces a defect state in the band gap. Motivated by the reported use of NiZrSn for thermoelectric applications, the Seebeck coefficient of both materials, both in the p -type and the n -type regimes, is calculated. We find that CoZrBi displays a rather large thermopower of up to 500 μ V /K when p doped, whereas NiZrSn possesses its maximum thermopower in the n -type regime. The reported difficulties in achieving p -type doping in NiZrSn could be rationalized by the unintended formation of Nii2 + in conjunction with extrinsic acceptors, resulting in their compensation. Moreover, it is found that all types of defects considered, when present in concentrations as large as 3%, tend to reduce the thermopower compared to ideal bulk crystals at T =600 K. For NiZrSn, the calculated thermodynamic data suggest that additional Ni impurities could be removed by annealing, leading to precipitation of a metallic Ni2ZrSn phase.

  11. Pressure leaching of chalcopyrite concentrate

    Science.gov (United States)

    Aleksei, Kritskii; Kirill, Karimov; Stanislav, Naboichenko

    2018-05-01

    The results of chalcopyrite concentrate processing using low-temperature and high-temperature sulfuric acid pressure leaching are presented. A material of the following composition was used, 21.5 Cu, 0.1 Zn, 0.05 Pb, 0.04 Ni, 26.59 S, 24.52 Fe, 16.28 SiO2 (in wt.%). The influence of technological parameters on the degree of copper and iron extraction into the leach solution was studied in the wide range of values. The following conditions were suggested as the optimal for the high-temperature pressure leaching: t = 190 °C, PO2 = 0.5 MPa, CH2SO4 = 15 g/L, L:S = 6:1. At the mentioned parameters, it is possible to extract at least 98% Cu from concentrate into the leaching solution during 100 minutes. The following conditions were suggested as optimal for the low-temperature pressure leaching: t = 105 °C, PO2 = 1.3-1.5 MPa, CH2SO4 = 90 g/L, L:S = 10:1. At the mentioned parameters, it is possible to extract up to 83% Cu from the concentrate into the leach solution during 300-360 minutes.

  12. Optical properties of chalcopyrite-type intermediate transition metal band materials from first principles

    International Nuclear Information System (INIS)

    Aguilera, I.; Palacios, P.; Wahnon, P.

    2008-01-01

    The optical properties of a novel potential high-efficiency photovoltaic material have been studied. This material is based on a chalcopyrite-type semiconductor (CuGaS 2 ) with some Ga atom substituted by Ti and is characterized by the formation of an isolated transition-metal band between the valence band and the conduction band. We present a study in which ab-initio density functional theory calculations within the generalized gradient approximation are carried out to determine the optical reflectivity and absorption coefficient of the materials of interest. Calculations for the host semiconductor are in good agreement with experimental results within the limitations of the approach. We find, as desired, that because of the intermediate band, the new Ti-substituted material would be able to absorb photons of energy lower than the band-gap of the host chalcopyrite. We also analyze the partial contributions to the main peaks of its spectrum

  13. Ternary superconductors

    International Nuclear Information System (INIS)

    Giorgi, A.L.

    1987-01-01

    Ternary superconductors constitute a class of superconducting compounds with exceptional properties such as high transition temperatures (≅ 15.2 K), extremely high critical fields (H c2 >60 Tesla), and the coexistence of superconductivity and long-range magnetic order. This has generated great interest in the scientific community and resulted in a large number of experimental and theoretical investigations in which many new ternary compounds have been discovered. A review of some of the properties of these ternary compounds is presented with particular emphasis on the ternary molybdenum chalcogenides and the ternary rare earth transition metal tetraborides. The effect of partial substitution of a second metal atom to form pseudoternary compounds is examined as well as some of the proposed correlations between the superconducting transition temperature and the structural and electronic properties of the ternary superconductors

  14. Ternary fission

    Indian Academy of Sciences (India)

    the energy minimization of all possible ternary breakups of a heavy radioactive nucleus. Further, within the TCM we have analysed the competition between different geometries as well as different positioning of the fragments. Also, an attempt was made to calculate the mass distribution of ternary fission process within the ...

  15. Performance Analysis of Thiocarbonohydrazide as a Novel Selective Depressant for Chalcopyrite in Molybdenite-Chalcopyrite Separation

    Directory of Open Access Journals (Sweden)

    Changping Guan

    2018-04-01

    Full Text Available A novel surfactant, thiocarbonohydrazide (TCH, was synthesized and tested for the first time as a selective chalcopyrite depressant in Cu-Mo separation. Its adsorption mechanisms on chalcopyrite were studied by flotation tests, zeta potential, FTIR, XPS and ToF-SIMS measurements. FTIR and zeta potential analyses suggested that there was a strong chemisorption reaction between TCH and chalcopyrite, resulting in the formation of TCH–copper complexes. XPS and ToF-SIMS measurements further confirmed the chemisorption of TCH onto the chalcopyrite surface and showed that this chemisorption reaction is due to its S and N atoms, which form five-membered chelating rings by releasing H ions.

  16. Ab-initio vibrational properties of transition metal chalcopyrite alloys determined as high-efficiency intermediate-band photovoltaic materials

    International Nuclear Information System (INIS)

    Palacios, P.; Aguilera, I.; Wahnon, P.

    2008-01-01

    In this work, we present frozen phonon and linear response ab-initio research into the vibrational properties of the CuGaS 2 chalcopyrite and transition metal substituted (CuGaS 2 )M alloys. These systems are potential candidates for developing a novel solar-cell material with enhanced optoelectronic properties based in the implementation of the intermediate-band concept. We have previously carried out ab-initio calculations of the electronic properties of these kinds of chalcopyrite metal alloys showing a narrow transition metal band isolated in the semiconductor band gap. The substitutes used in the present work are the 3d metal elements, Titanium and Chromium. For the theoretical calculations we use standard density functional theory at local density and generalized gradient approximation levels. We found that the optical phonon branches of the transition metal chalcopyrite, are very sensitive to the specific bonding geometry and small changes in the transition metal environment

  17. Ball milling of chalcopyrite: Moessbauer spectroscopy and XRD studies

    International Nuclear Information System (INIS)

    Pollak, H.; Fernandes, M.; Levendis, D.; Schonig, L.

    1999-01-01

    The aim of this project is to study the behavior of chalcopyrite under ball milling for extended periods in order to determine how it's decompose or transform. Tests were done with chalcopyrite mixed with iron and zinc with and without surfactant. The use of surfactants has various effects such as avoiding oxidation and clustering of the fine particles. In all case magnetic chalcopyrite is transformed into a paramagnetic component showing a disordered structure, thus revealing that Cu atoms have replaced Fe atoms. In the case of ball milling in air, chalcopyrite is decomposed with the lost of iron, while in milling under surfactants, iron enters into the chalcopyrite structure. (author)

  18. Ternary fission

    International Nuclear Information System (INIS)

    Wagemans, C.

    1991-01-01

    Since its discovery in 1946, light (charged) particle accompanied fission (ternary fission) has been extensively studied, for spontaneous as well as for induced fission reactions. The reason for this interest was twofold: the ternary particles being emitted in space and time close to the scission point were expected to supply information on the scission point configuration and the ternary fission process was an important source of helium, tritium, and hydrogen production in nuclear reactors, for which data were requested by the nuclear industry. Significant experimental progress has been realized with the advent of high-resolution detectors, powerful multiparameter data acquisition systems, and intense neutron and photon beams. As far as theory is concerned, the trajectory calculations (in which scission point parameters are deduced from the experimental observations) have been very much improved. An attempt was made to explain ternary particle emission in terms of a Plateau-Rayleigh hydrodynamical instability of a relatively long cylindrical neck or cylindrical nucleus. New results have also been obtained on the so-called open-quotes trueclose quotes ternary fission (fission in three about-equal fragments). The spontaneous emission of charged particles has also clearly been demonstrated in recent years. This chapter discusses the main characteristics of ternary fission, theoretical models, light particle emission probabilities, the dependence of the emission probabilities on experimental variables, light particle energy distributions, light particle angular distributions, correlations between light particle accompanied fission observables, open-quotes trueclose quotes ternary fission, and spontaneous emission of heavy ions. 143 refs., 18 figs., 8 tabs

  19. Ternary systems

    International Nuclear Information System (INIS)

    Kagan, D.N.; Hubberstey, P.; Barker, M.G.

    1985-01-01

    The paper reviews the experimental and theoretical studies carried out on multicomponent alkali metal systems. Solid-liquid phase equilibria studies are mainly concerned with the systems Na-K-Rb and Na-K-Cs, and data on the liquidus temperatures in these systems are presented. The thermodynamic properties of the ternary Na-K-Cs eutectic system have been determined experimentally, and the enthalpy, heat capacity and excess functions of the alloy are given. An analysis of calculational methods used in determining thermodynamic functions of ternary liquid metals systems is described. Finally, data are tabulated for the density, compressibility, saturated vapour pressure, viscosity and thermal conductivity of the ternary Na-K-Cs eutectic system. (UK)

  20. The structure of reconstructed chalcopyrite surfaces

    Science.gov (United States)

    Thinius, Sascha; Islam, Mazharul M.; Bredow, Thomas

    2018-03-01

    Chalcopyrite (CuFeS2) surfaces are of major interest for copper exploitation in aqueous solution, called leaching. Since leaching is a surface process knowledge of the surface structure, bonding pattern and oxidation states is important for improving the efficiency. At present such information is not available from experimental studies. Therefore a detailed computational study of chalcopyrite surfaces is performed. The structures of low-index stoichiometric chalcopyrite surfaces {hkl} h, k, l ∈ {0, 1, 2} have been studied with density functional theory (DFT) and global optimization strategies. We have applied ab initio molecular dynamics (MD) in combination with simulated annealing (SA) in order to explore possible reconstructions via a minima hopping (MH) algorithm. In almost all cases reconstruction involving substantial rearrangement has occurred accompanied by reduction of the surface energy. The analysis of the change in the coordination sphere and migration during reconstruction reveals that S-S dimers are formed on the surface. Further it was observed that metal atoms near the surface move toward the bulk forming metal alloys passivated by sulfur. The obtained surface energies of reconstructed surfaces are in the range of 0.53-0.95 J/m2.

  1. From Large-Scale Synthesis to Lighting Device Applications of Ternary I-III-VI Semiconductor Nanocrystals: Inspiring Greener Material Emitters.

    Science.gov (United States)

    Chen, Bingkun; Pradhan, Narayan; Zhong, Haizheng

    2018-01-18

    Quantum dots with fabulous size-dependent and color-tunable emissions remained as one of the most exciting inventories in nanomaterials for the last 3 decades. Even though a large number of such dot nanocrystals were developed, CdSe still remained as unbeatable and highly trusted lighting nanocrystals. Beyond these, the ternary I-III-VI family of nanocrystals emerged as the most widely accepted greener materials with efficient emissions tunable in visible as well as NIR spectral windows. These bring the high possibility of their implementation as lighting materials acceptable to the community and also to the environment. Keeping these in mind, in this Perspective, the latest developments of ternary I-III-VI nanocrystals from their large-scale synthesis to device applications are presented. Incorporating ZnS, tuning the composition, mixing with other nanocrystals, and doping with Mn ions, light-emitting devices of single color as well as for generating white light emissions are also discussed. In addition, the future prospects of these materials in lighting applications are also proposed.

  2. Epitaxial growth of chalcopyrite CuInS2 films on GaAs (001) substrates by evaporation method with elemental sources

    International Nuclear Information System (INIS)

    Nozomu, Tsuboi; Satoshi, Kobayash; Nozomu, Tsuboi; Takashi, Tamogami

    2010-01-01

    Full text : Ternary chalcopyrite semiconductor CuInS 2 is one of the potential candidates for absorber layers in high-efficiency thin film solar cells due to its direct bandgap Eg of 1.5 eV, which matches with solar spectrum. However, CuInS 2 solar cells face the problem of lower solar conversion efficiency compared with Cu(InGa)Se 2 solar cells. Investigation of fundamental properties of CuInS 2 films is necessary to understand key issues for solar cell performance. Although in bulk CuInS 2 is known to crystallize into chalcopyrite (CH) structure, in thin film other structures such as Cu-Au (CA) and sphalerite (SP) structures may coexist. It was reported epitaxial growth of slightly Cu-rich CuInS 2 films with c-axis orientated CA only and/or with a mixture of a- and c-axes orientated CH structures on GaP (001) at substrate temperature of 500 degrees using the conventional evaporation method with three elemental sources. Successful growth of epitaxial CH structured CuInS 2 were observed for films grown on GaP at 570 degrees with slightly Cu-rich composition. In this paper, CuInS 2 films with various [Cu]/[In] ratios are grown on GaAs(001) substrates, and the composition range in terms of the [Cu]/[In] ratio where epitaxial films with CH structure grow and the structural qualities of the films are discussed in comparison with those on GaP substrates. Films with various ratios of [Cu]/[In]=0.8 ≤1.9 are grown at 500 degrees and 570 degrees using the evaporation system described in our previous reports. Regardless of the substrate temperature, noticeable X-ray diffraction (XRD) peaks of CH structured CuInS 2 phase are observed in slightly Cu-rich films. However, reflection high energy electron diffraction (RHEED) patterns of the slightly Cu-rich films grown at 570 degrees exhibit noticeable spots not only due to the CH structure but also due to the CA structure. The amount of the CA structure is considered to be small because of the absence of the XRD peaks of the CA

  3. Fabrication of dye sensitized solar cell using Cr doped Cu-Zn-Se type chalcopyrite thin film

    Energy Technology Data Exchange (ETDEWEB)

    Joseph, D. Paul; Venkateswaran, C. [Materials Science Centre, Department of Nuclear Physics, University of Madras, Guindy Campus, Chennai-600 025 (India); Ganesan, S.; Suthanthiraraj, S. Austin; Maruthamuthu, P. [Department of Energy, University of Madras, Guindy Campus, Chennai 600 025 (India); Kovendhan, M. [Department of Physics, Presidency College, Chennai 600 005 (India)

    2011-09-15

    Chalcopyrites are a versatile class of semiconductors known for their potential in photovoltaic applications. Considering the well established CuInSe{sub 2} as a prototype system, a new compound of the chalcopyrite type, Cu{sub 1-x}Zn{sub 1-y}Se{sub 2-{delta}}, by replacing In with Zn, has been prepared (both undoped and 2% Cr doped) by the metallurgical method. Thin films have been deposited by the thermal evaporation technique using the stabilized polycrystalline compounds as charge. Structural, compositional, morphological, and optical properties of the films are analyzed and reported. Use of these films as electrodes in dye sensitized solar cell (DSSC) is demonstrated. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  4. Ternary thiophene-X-thiophene semiconductor building blocks (X = fluorene, carbazole, phenothiazine): Modulating electronic properties and electropolymerization ability by tuning the X core

    Energy Technology Data Exchange (ETDEWEB)

    Tacca, Alessandra, E-mail: alessandra.tacca@eni.com [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy); Po, Riccardo; Caldararo, Maria; Chiaberge, Stefano; Gila, Liliana; Longo, Luca [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy); Mussini, Patrizia Romana [Dipartimento di Chimica Fisica ed Elettrochimica, Universita degli Studi di Milano, Via Golgi 19, 20133 Milano (Italy); Pellegrino, Andrea; Perin, Nicola; Salvalaggio, Mario; Savoini, Alberto; Spera, Silvia [Centro Ricerche per le Energie non Convenzionali, Istituto ENI Donegani, ENI S.p.A., Via G. Fauser 4, 28100 Novara (Italy)

    2011-07-30

    Highlights: > Effect of aromatic core on electronic properties in thiophene-X-thiophene trimers. > The lower the electron richness of X core, the deeper the HOMO level. > Different thiophene positions on X lead to kinked structure with lower conjugation. > The fluorene structure exhibits the lowest Stokes shift and the highest quantum yield. > The corresponding polymers obtained through three routes were studied. - Abstract: To achieve rationalization criteria for target-oriented molecular design of Th-X-Th (Th = thiophene) semiconductor building blocks, we have carried out an extensive investigation on the effects of the X core (X = fluorene, carbazole or phenothiazine) on the electronic properties and polymerization ability of Th-X-Th monomers and on the electronic and structural properties of the corresponding periodic conducting polymers -(Th-X-Th){sub n}-, obtained by electropolymerization and, for comparison's sake, by FeCl{sub 3}-catalyzed polymerization and/or Suzuki coupling. The effects of molecule bending and of solubilising bulky alkyl substituents have also been considered. The systematic, exhaustive template sequence combined with a rigorous, multitechnique investigation protocol affords a unique data library and a complete set of reliable interpretative/predictive guidelines.

  5. Raman spectroscopic study of some chalcopyrite-xanthate flotation products

    CSIR Research Space (South Africa)

    Andreev, GN

    2003-12-16

    Full Text Available of normal vibrations of the corresponding individual compounds. The latter facilitated the Raman spectroscopic elucidation of the reaction products formed on the chalcopyrite surface in real industrial flotation conditions with a sodium isopropyl xanthate...

  6. Effect of amino acids on bioleaching of chalcopyrite ore by ...

    African Journals Online (AJOL)

    Diptajeet

    2012-01-26

    Jan 26, 2012 ... ferrooxidans. Efficiency of microbial leaching of chalcopyrite by T. ferrooxidans was investigated in the .... Devasia P, Natarajan KA, Sathyanarayana DN, Ramananda Rao G. (1993). Surface ... Effects of L-cysteine on Ni-Cu.

  7. Design of ternary clocked adiabatic static random access memory

    International Nuclear Information System (INIS)

    Wang Pengjun; Mei Fengna

    2011-01-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions. (semiconductor integrated circuits)

  8. Effect of Sodium Sulfite on Floatability of Chalcopyrite and Molybdenite

    Directory of Open Access Journals (Sweden)

    Hajime Miki

    2018-04-01

    Full Text Available Sodium hydrogen sulfide (NaHS is commonly used as a copper depressant in the selective flotation of copper and molybdenum ores. However, the process is facing health and safety issues because NaHS readily yields toxic hydrogen sulfide gas (H2S under acidic conditions. In this study, Na2SO3 was proposed as an alternative copper depressant. The effect of Na2SO3 on the surface wettability and floatability of chalcopyrite and molybdenite—typical copper and molybdenum minerals, respectively—was intensively studied using contact angle measurements and flotation tests. Contact angle readings show that the chalcopyrite surface became hydrophilic after the Na2SO3 treatment. Meanwhile, the molybdenite surface was relatively more hydrophobic compared with that of chalcopyrite after the treatment. Flotation tests using pure minerals of chalcopyrite and molybdenite demonstrate that the floatability of chalcopyrite decreased with increasing concentration of Na2SO3. On the other hand, the floatability of molybdenite gradually increased under similar conditions, suggesting that Na2SO3 might have the potential to be used for selective flotation of chalcopyrite and molybdenite. A possible mechanism is proposed in this study to explain the phenomenon using X-ray photoelectron spectroscopy analysis.

  9. Processes for chalcopyrite-based solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Lux-Steiner, M.C.; Ennaoui, A.; Fischer, C.-H.; Jaeger-Waldau, A.; Klaer, J.; Klenk, R.; Koenenkamp, R.; Matthes, T.; Scheer, R.; Siebentritt, S.; Weidinger, A. [Hahn-Meitner-Institut Berlin GmbH (Germany)

    2000-02-21

    This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimise stoichiometric CuInS{sub 2} films, novel deposition technologies for CuGaSe{sub 2} films and buffer layers as well as alternative buffer layers were studied and compared. With ZnSe as alternative buffer layer on Cu(InGa)(S,Se){sub 2} absorbers developed by SSI Camarillo and Siemens Solar, Munich, total area efficiencies up to 13.7% and active area efficiencies up to 15.7% could be reached, respectively. For CuInS{sub 2} two important results were achieved. The efficiency of Cu-poor CuInS{sub 2} cells could be increased to 8.3%. Standard Cu-rich prepared devices led to a new record efficiency of 12.5%. (orig.)

  10. Magnetic exchange interactions in Mn doped ZnSnAs{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Bouhani-Benziane, H.; Sahnoun, O. [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Sahnoun, M., E-mail: sahnoun_cum@yahoo.fr [Laboratoire de Physique Quantique de la Matière et Modélisation Mathématique (LPQ3M), University of Mascara (Algeria); Department of Chemistry, University of Fribourg (Switzerland); Driz, M. [Laboratoire de Sciences des Matériaux (LSM), University of Sidi Bel Abbes (Algeria); Daul, C. [Department of Chemistry, University of Fribourg (Switzerland)

    2015-12-15

    Accurate ab initio full-potential augmented plane wave (FP-LAPW) electronic calculations within generalized gradient approximation have been performed for Mn doped ZnSnAs{sub 2} chalcopyrites, focusing on their electronic and magnetic properties as a function of the geometry related to low Mn-impurity concentration and the spin magnetic alignment (i.e., ferromagnetic vs antiferromagnetic). As expected, Mn is found to be a source of holes and localized magnetic moments of about 4 µ{sub B} per Mn atom are calculated which are sufficiently large. The defect calculations are firstly performed by replacing a single cation (namely Zn and Sn) with a single Mn atom in the pure chalcopyrite ZnSnAs{sub 2} supercell, and their corresponding formation energies show that the substitution of a Sn atom (rather than Zn) by Mn is strongly favored. Thereafter, a comparison of total energy differences between ferromagnetic (FM) and antiferromagnetic (AFM) are given. Surprisingly, the exchange interaction between a Mn pairs is found to oscillate with the distance between them. Consequently, the AFM alignment is energetically favored in Mn-doped ZnSnAs{sub 2} compounds, except for low impurity concentration associated with lower distances between neighboring Mn impurities, in this case the stabilization of FM increases. Moreover, the ferromagnetic alignment in the Mn-doped ZnSnAs{sub 2} systems behaves half-metallic; the valence band for majority spin orientation is partially filled while there is a gap in the density of states for the minority spin orientation. This semiconducting gap of ~1 eV opened up in the minority channel and is due to the large bonding–antibonding splitting from the p–d hybridization. Our findings suggest that the Mn-doped ZnSnAs{sub 2} chalcopyrites could be a different class of ferromagnetic semiconductors. - Highlights: • ab initio calculations were performed on Mn doped ZnSnAs{sub 2} chalcopyrite. • Substitution of a Sn atom (rather than Zn) by Mn

  11. Selective separation of pyrite and chalcopyrite by biomodulation.

    Science.gov (United States)

    Chandraprabha, M N; Natarajan, K A; Modak, Jayant M

    2004-09-01

    Selective separation of pyrite from other associated ferrous sulphides at acidic and neutral pH has been a challenging problem. This paper discusses the utility of Acidithiobacillus ferrooxidans for the selective flotation of chalcopyrite from pyrite. Consequent to interaction with bacterial cells, pyrite remained depressed even in the presence of potassium isopropyl xanthate collector while chalcopyrite exhibited significant flotability. However, when the minerals were conditioned together, the selectivity achieved was poor due to the activation of pyrite surface by the copper ions in solution. The selectivity was improved when the sequence of conditioning with bacterial cells and collector was reversed, since the bacterial cells were able to depress collector interacted pyrite effectively, while having negligible effect on chalcopyrite. The observed behaviour is analysed and discussed in detail. The separation obtained was significant both at acidic and alkaline pH. This selectivity achieved was retained when the minerals were interacted with both bacterial cells and collector simultaneously.

  12. Catalytic effect of light illumination on bioleaching of chalcopyrite.

    Science.gov (United States)

    Zhou, Shuang; Gan, Min; Zhu, Jianyu; Li, Qian; Jie, Shiqi; Yang, Baojun; Liu, Xueduan

    2015-04-01

    The influence of visible light exposure on chalcopyrite bioleaching was investigated using Acidithiobacillus ferrooxidans. The results indicated, in both shake-flasks and aerated reactors with 8500-lux light, the dissolved Cu was 91.80% and 23.71% higher, respectively, than that in the controls without light. The catalytic effect was found to increase bioleaching to a certain limit, then plateaued as the initial chalcopyrite concentration increased from 2% to 4.5%. Thus a balanced mineral concentration is highly amenable to bioleaching via offering increased available active sites for light adsorption while eschewing mineral aggregation and screening effects. Using semiconducting chalcopyrite, the light facilitated the reduction of Fe(3+) to Fe(2+) as metabolic substrates for A.ferrooxidans, leading to better biomass, lower pH and redox potential, which are conducive to chalcopyrite leaching. The light exposure on iron redox cycling was further confirmed by chemical leaching tests using Fe(3+), which exhibited higher Fe(2+) levels in the light-induced system. Copyright © 2015 Elsevier Ltd. All rights reserved.

  13. Electrochemical dissolution of chalcopyrite studied by voltammetry of immobilized microparticles

    Czech Academy of Sciences Publication Activity Database

    Pikna, L.; Lux, L.; Grygar, Tomáš

    2006-01-01

    Roč. 60, č. 4 (2006), s. 293-296 ISSN 0366-6352 Grant - others:VEGA(SK) No1/1108/04; APVT(SK) No20-009404 Institutional research plan: CEZ:AV0Z40320502 Keywords : chalcopyrite * cyclic voltammetry Subject RIV: CA - Inorganic Chemistry Impact factor: 0.360, year: 2006

  14. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.; Jiang, Chao; Grimes, Robin W.; Schwingenschlö gl, Udo

    2010-01-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a

  15. Binary and ternary systems

    International Nuclear Information System (INIS)

    Petrov, D.A.

    1986-01-01

    Conditions for thermodynamical equilibrium in binary and ternary systems are considered. Main types of binary and ternary system phase diagrams are sequently constructed on the basis of general regularities on the character of transition from one equilibria to others. New statements on equilibrium line direction in the diagram triple points and their isothermal cross sections are developed. New represenations on equilibria in case of monovariant curve minimum and maximum on three-phase equilibrium formation in ternary system are introduced

  16. Design of ternary low-power Domino JKL flip—flop and its application

    International Nuclear Information System (INIS)

    Wang Pengjun; Yang Qiankun; Zheng Xuesong

    2012-01-01

    By researching the ternary flip—flop and the adiabatic Domino circuit, a novel design of low-power ternary Domino JKL flip—flop on the switch level is proposed. First, the switch-level structure of the ternary adiabatic Domino JKL flip—flop is derived according to the switch-signal theory and its truth table. Then the ternary loop operation circuit and ternary reverse loop operation circuit are achieved by employing the ternary JKL flip—flop. Finally, the circuit is simulated by using the Spice tool and the results show that the logic function is correct. The energy consumption of the ternary adiabatic Domino JKL flip—flop is 69% less than its conventional Domino counterpart. (semiconductor integrated circuits)

  17. Characterizations of Some Semi magnetic Chalcopyrite Compounds

    International Nuclear Information System (INIS)

    Farrag, A.A.A.

    2012-01-01

    Cd 1-x Zn x Se (x=0, 0.5 and 1) and Cd 0.5 Zn 0.5 X 0.02 Se (X= Mn, Fe and Co) semiconductor and semi magnetic semiconductor compounds were prepared in the bulk form by melt quenching technique in ice water. Thin films of thickness 300 nm have been deposited on ultra cleaned soda lime glass substrates, at room temperature by thermal evaporation technique. The structural, optical and electrical properties of Cd 1-x Zn x Se (x=0, 0.5 and 1) and Cd 0.5 Zn 0.5 X 0.02 Se (X= Mn, Fe and Co) thin film samples have been studied. ESR and magnetic properties of Cd 0.5 Zn 0.5 X 0.02 Se (X= Mn, Fe and Co) powder samples also have been studied. The structural properties of Cd 1-x Zn x Se (x=0, 0.5 and 1) and Cd 0.5 Zn 0.5 X 0.02 Se (X= Mn, Fe and Co) thin film and powder samples have been investigated by using X-ray diffraction (XRD) technique. The crystal structure, lattice parameters, grain size, micro strain and dislocation density were determined from the X- ray diffraction patterns of the investigated samples. The optical properties of the investigated thin film samples were studied. Transmittance and reflectance were measured in wavelength range from 400 nm to 2500 nm and used to calculate the optical constants like absorption coefficient, refractive index and optical band gap. The obtained values of the optical band gap illustrated that the films exhibit direct band gap. The analysis of the obtained values of the refractive index yielded the high frequency dielectric constant and other optical dispersion parameters. The photon energy dependence of the relaxation time, dissipation factor and optical conductivity of the investigated thin film samples were studied also. The temperature dependence of dc conductivity for the investigated thin films was studied in temperature range from 300 K to 420 K. The obtained results showed that there are two different conduction mechanisms with two different values of activation energy in the defined temperature range. The temperature

  18. Orbital frustration induced unusual ordering in semiconductor alloys

    Science.gov (United States)

    Liu, Kai; Yin, Wanjian; Chen, Shiyou; Gong, Xingao; Wei, Suhuai; Xiang, Hongjun

    It is well known that ternary zinc-blende semiconductors are always more stable in the chalcopyrite (CH) structure than the Cu-Au (CA) structure because CH structure has large Coulomb interaction and reduced strain energy. Surprisingly, an experimental study showed that ZnFeSe2 alloy takes the CA order as the ground state structure, which is consistent with our density function theory (DFT) calculations showing that the CA order has lower energy than the CH order for ZnFeSe2. We reveal that the orbital degree of freedom of high-spin Fe2+ ion (d6) in the tetrahedral crystal field plays a key role in stabilizing the CA order. First, the spin-minority d electron of the Fe2+ ion tends to occupy the dx2-y 2 -like orbital instead of the d3z2 -r2 -like orbital because of its large negative Coulomb energy. Second, for a nearest-neighboring Fe2+ pair, two spin-minority d electrons with occupied dx2-y 2 -like orbitals in the plane containing the Fe-Fe bond has lower electronic kinetic energy. Both conditions can be satisfied in the CA ordered ZnFeSe2 alloy, while there is an orbital frustration in the CH structure. Our results suggest that orbital degree of freedom provides a new way to manipulate the structure and properties of alloys. Work at Fudan was supported by NSFC (11374056), the Special Funds for Major State Basic Research (2012CB921400, 2015CB921700), Program for Professor of Special Appointment (Eastern Scholar), and Fok Ying Tung Education Foundation.

  19. Basic Research Opportunities in Cu-Chalcopyrite Photovoltaics: Preprint

    International Nuclear Information System (INIS)

    Rockett, A.; Bhattacharya, R. N.; Kapur, V.; Wei, S. H.

    1999-01-01

    A brief review is presented of fundamental research topics of primary importance to the development of improved solar cells based on chalcopyrite-structure materials. The opinions presented are a consensus opinion of the authors of the paper, with input from members of the chalcopyrite solar cells research community in the United States. Major topical areas identified included, in order of importance, are (1) development of an integrated predictive understanding of CIGS(S) materials and devices, (2) development of novel deposition techniques and characterization of the mechanisms of growth in existing and novel processes, (3) novel materials, especially with wide-energy gaps (is greater than or equal to 1.7 eV) other than Cu-based chalcopyrites, (4) development of real-time material characterizations for process control, and (5) alternative front- and rear-contact materials. Although the five topics identified are quite broad, they do not include all topics of interest. Also discussed briefly are some other potential research areas not in the highest priority topics, in particular, areas identified as primarily ''engineering'' rather than ''science.''

  20. Heterocoagulation of chalcopyrite and pyrite minerals in flotation separation.

    Science.gov (United States)

    Mitchell, Timothy K; Nguyen, Anh V; Evans, Geoffrey M

    2005-06-30

    Heterocoagulation between various fine mineral particles contained within a mineral suspension with different structural and surface chemistry can interfere with the ability of the flotation processes to selectively separate the minerals involved. This paper examines the interactions between chalcopyrite (a copper mineral) and pyrite (an iron mineral often bearing gold) as they approach each other in suspensions with added chemicals, and relates the results to the experimental data for the flotation recovery and selectivity. The heterocoagulation was experimentally studied using the electrophoretic light scattering (ELS) technique and was modelled by incorporating colloidal forces, including the van der Waals, electrostatic double layer and hydrophobic forces. The ELS results indicated that pyrite has a positive zeta potential (zeta) up to its isoelectric point (IEP) at approximately pH 2.2, while chalcopyrite has a positive zeta up to its IEP at approximately pH 5.5. This produces heterocoagulation of chalcopyrite with pyrite between pH 2.2 and pH 5.5. The heterocoagulation was confirmed by the ELS spectra measured with a ZetaPlus instrument from Brookhaven and by small-scale flotation experiments.

  1. The dissolution of chalcopyrite in chloride media; Lixiviacion de la calcopirita en medios clorurados

    Energy Technology Data Exchange (ETDEWEB)

    Ibanez, T.; Velasquez, L.

    2013-06-01

    The aim of this investigation is to determinate the effects of parameters and additives on the kinetics of dissolution of chalcopyrite on moderated conditions by means of dissolutions test with chalcopyrite concentrate and pure chalcopyrite in shake flasks and instrumented stirred reactors. A study of the dissolution of chalcopyrite in chloride solutions has demonstrated that the rate of dissolution of chalcopyrite is strongly dependent on the potential of the solution within a range of 540 to 630 mV (versus SHE). Leaching at pH around 2.5 results in increased rates of copper dissolution suggesting the possibility to keep the solution potential within the range. Both pyrite and silver ions enhance the dissolution of chalcopyrite and this effect increases when both species are present. The MnO{sub 2} has a negative effect on the dissolution increasing the solution potential to values where the rate decreases considerably. (Author)

  2. Synergistic bioleaching of chalcopyrite and bornite in the presence of Acidithiobacillus ferrooxidans.

    Science.gov (United States)

    Zhao, Hongbo; Wang, Jun; Hu, Minghao; Qin, Wenqing; Zhang, Yansheng; Qiu, Guanzhou

    2013-12-01

    Bioleaching of chalcopyrite and bornite in the presence of Acidithiobacillus ferrooxidans was carried out to investigate the influences between each other during bioleaching. Bioleaching results indicated that bornite accelerated the dissolution of chalcopyrite, and chalcopyrite also accelerated the dissolution of bornite, it could be described as a synergistic effect during bioleaching, this synergistic effect might be attributed to the galvanic effect between chalcopyrite and bornite, and to the relatively low solution potential as the addition of bornite. Significantly amount of elemental sulfur and jarosite formed on the minerals surface might be the main passivation film inhibiting the further dissolution, and the amount of elemental sulfur significantly increased with the addition of bornite. Results of electrochemical measurements indicated that the oxidation and reduction mechanisms of chalcopyrite and bornite were similar, the addition of bornite or chalcopyrite did not change the oxidative and reductive mechanisms, but increased the oxidation rate. Copyright © 2013 Elsevier Ltd. All rights reserved.

  3. Effect of microwave-assisted heating on chalcopyrite leaching of kinetics, interface temperature and surface energy

    Directory of Open Access Journals (Sweden)

    Tong Wen

    Full Text Available The microwave-assisted leaching was a new approach to intensify the copper recovery from chalcopyrite by hydrometallurgy. In this work, the effect of microwave-assisted heating on chalcopyrite leaching of kinetics, interfacial reaction temperature and surface energy were investigated. The activation energy of chalcopyrite leaching was affected indistinctively by the microwave-assisted heating (39.1 kJ/mol compared with the conventional heating (43.9 kJ/mol. However, the boiling point of the leaching system increased through microwave-assisted heating. Because of the improved boiling point and the selective heating of microwave, the interfacial reaction temperature increased significantly, which gave rise to the increase of the leaching recovery of copper. Moreover, the surface energy of the chalcopyrite through microwave-assisted heating was also enhanced, which was beneficial to strengthen the leaching of chalcopyrite. Keywords: Microwave-assisted heating, Chalcopyrite, Leaching kinetics, Interface temperature, Surface energy

  4. Suppression of antiferromagnetic interactions through Cu vacancies in Mn-substituted CuInSe2 chalcopyrites

    International Nuclear Information System (INIS)

    Yao Jinlei; Brunetta, Carl D; Aitken, Jennifer A

    2012-01-01

    Stoichiometric and Cu-poor Cu 0.95-x Mn 0.05 InSe 2 (x = 0-0.20) compounds were synthesized by high-temperature, solid-state reactions. The presence of copper vacancies is revealed by Rietveld refinements of combined neutron and x-ray powder diffraction data. The antiferromagnetic interaction is depressed by the copper deficiency, which may be explained as the competition between the antiferromagnetic Mn-Se-eMn superexchange interaction and the hole-mediated ferromagnetic exchange induced by the copper vacancy. The introduction of copper vacancies is proposed to be a viable route to impart carrier-mediated ferromagnetic exchange in the chalcopyrite-based dilute magnetic semiconductors. (paper)

  5. A stochastic model of solid state thin film deposition: Application to chalcopyrite growth

    Directory of Open Access Journals (Sweden)

    Robert J. Lovelett

    2016-04-01

    Full Text Available Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impossible to characterize with deterministic methods. We demonstrate the modeling approach with the example of chalcopyrite Cu(InGa(SeS2 thin film growth via precursor reaction, which is a common industrial method for fabricating thin film photovoltaic modules. The model is used to understand how and why through-film variation in the composition of Cu(InGa(SeS2 thin films arises and persists. We believe that the model will be valuable as an effective quantitative description of many other materials systems used in semiconductors, energy storage, and other fast-growing industries.

  6. Thin-film intermediate band chalcopyrite solar cells

    International Nuclear Information System (INIS)

    Fuertes Marron, D.; Marti, A.; Luque, A.

    2009-01-01

    Chalcopyrite-based solar cells currently lead the efficiency tables of thin-film photovoltaic technologies. Further improvements are foreseen upon implementation of an intermediate band in the absorber layers. We present a theoretical analysis of the efficiency limit for this type of device as a function of factors such as the gap of the host, the relative position of the intermediate band with respect to the band edge and the level of light concentration used as illumination. We have also considered the impact of non-idealities on the performance of the device, particularly the effect of electronic losses related to non-radiative recombination

  7. Co-Bioleaching of Chalcopyrite and Silver-Bearing Bornite in a Mixed Moderately Thermophilic Culture

    Directory of Open Access Journals (Sweden)

    Congren Yang

    2017-12-01

    Full Text Available Chalcopyrite and bornite are two important copper minerals, and they often coexist. In this study, the co-bioleaching of chalcopyrite and silver-bearing bornite by mixed moderately thermophilic culture at 50 °C was investigated. The bioleaching results show that the extraction percentage of Cu for co-bioleaching of chalcopyrite (Ccp and silver-bearing bornite (Bn (Ccp/Bn = 3:1 was 94.6%. Compared to bioleaching of chalcopyrite or silver-bearing bornite alone, the Cu extraction percentage was greatly enhanced when they were bioleached together. The leaching residues were characterized by X-ray diffraction (XRD and X-ray photoelectron spectroscopy (XPS. Silver-bearing bornite dissolved preferentially compared to chalcopyrite, due to galvanic interactions. Simultaneously, Ag+ was released from the silver-bearing bornite into solution. Ag2S formed on the surface because Cu and Fe in the chalcopyrite were replaced by Ag+, accelerating chalcopyrite dissolution and enrichment of Ag on the surface of the chalcopyrite.

  8. Insights into the relation between adhesion force and chalcopyrite-bioleaching by Acidithiobacillus ferrooxidans.

    Science.gov (United States)

    Zhu, Jianyu; Wang, Qianfen; Zhou, Shuang; Li, Qian; Gan, Min; Jiang, Hao; Qin, Wenqing; Liu, Xueduan; Hu, Yuehua; Qiu, Guanzhou

    2015-02-01

    This paper presents a study on the relation between bacterial adhesion force and bioleaching rate of chalcopyrite, which sheds light on the influence of interfacial interaction on bioleaching behavior. In our research, Acidithiobacillus ferrooxidans (A. ferrooxidans) were adapted to grow with FeSO4 · 7H2O, element sulfur or chalcopyrite. Then, surface properties of Acidithiobacillus ferrooxidans and chalcopyrite were analyzed by contact angle, zeta potential and Fourier transform infrared spectroscopy (FTIR). Adhesion force between bacteria and chalcopyrite was measured by atomic force microscopy (AFM). Attachment and bioleaching behaviors were also monitored. The results showed that A. ferrooxidans adapted with chalcopyrite exhibited the strongest adhesion force to chalcopyrite and the highest bioleaching rate. Culture adapted with sulfur bacteria took second place and FeSO4 · 7H2O-adapted bacteria were the lowest. Bioleaching rate and bacterial attachment capacity were positively related to bacterial adhesion force, which is affected by the nature of energy source. According to this work, the attachment of bacteria to chalcopyrite surface is one of the most important aspects that influence the bioleaching process of chalcopyrite. Copyright © 2014 Elsevier B.V. All rights reserved.

  9. Galvanic enhancement for high pressure leaching of chalcopyrite

    Directory of Open Access Journals (Sweden)

    Kim D.H.

    2016-01-01

    Full Text Available This study was conducted to evaluate the galvanic enhancement of the pressure oxidation (POX leaching of a chalcopyrite/chalcocite concentrate, which is believed to take place via a redox reaction. Cu recoveries of >90% could be achieved during POX leaching of this chalcopyrite/chalcocite concentrate at 200°C and 0.7 MPa initial oxygen pressure within 2h in a pressure reactor lined with titanium, which were 18-28% higher than for the same leaching using the teflon liner. A slow heating time seems to produce more sulphur coating, reducing the leaching performance, yielding much lower Cu recovery when the teflon lining was used, although this does not greatly affect the other case when the reactor was lined with titanium. The introduction of an electronic conductor, in this case the titanium surface, is believed to enhance this redox process, in which the oxidation of copper minerals and sulphur to sulphate at the anodic sites (mineral surface encountered during POX leaching takes place simultaneously with the reversible oxidation/reduction of the Fe2+/Fe3+couple and oxygen reduction on titanium.

  10. Optimization of the use of carbon paste electrodes (CPE for electrochemical study of the chalcopyrite

    Directory of Open Access Journals (Sweden)

    Daniela G. Horta

    2009-01-01

    Full Text Available The use of carbon paste electrodes (CPE of mineral sulfides can be useful for electrochemical studies to overcome problems by using massive ones. Using CPE-chalcopyrite some variables were electrochemically evaluated. These variables were: (i the atmosphere of preparation (air or argon of CPE and elapsed time till its use; (ii scan rate for voltammetric measurements and (iii chalcopyrite concentration in the CPE. Based on cyclic voltammetry, open-circuit potential and electrochemical impedance results the recommendations are: oxygen-free atmosphere to prepare and kept the CPE until around two ours, scan rates from 10 to 40 mV s-1, and chalcopyrite concentrations > 20%.

  11. Comparative study on the selective chalcopyrite bioleaching of a molybdenite concentrate with mesophilic and thermophilic bacteria.

    Science.gov (United States)

    Romano, P; Blázquez, M L; Alguacil, F J; Muñoz, J A; Ballester, A; González, F

    2001-03-01

    This study evaluates different bioleaching treatments of a molybdenite concentrate using mesophilic and thermophilic bacterial cultures. Further studies on the chemical leaching and the electrochemical behavior of the MoS(2) concentrate were carried out. Bioleaching tests showed a progressive removal of chalcopyrite from the molybdenite concentrate with an increase in temperature. Chemical leaching tests support the idea of an indirect attack of the concentrate. Electrochemical tests indicate that chalcopyrite dissolution is favored when molybdenite is present. Therefore, this type of bioleaching treatment could be applied to purify molybdenite flotation concentrates by selectively dissolving chalcopyrite.

  12. Design and exploration of semiconductors from first principles: A review of recent advances

    Science.gov (United States)

    Oba, Fumiyasu; Kumagai, Yu

    2018-06-01

    Recent first-principles approaches to semiconductors are reviewed, with an emphasis on theoretical insight into emerging materials and in silico exploration of as-yet-unreported materials. As relevant theory and methodologies have developed, along with computer performance, it is now feasible to predict a variety of material properties ab initio at the practical level of accuracy required for detailed understanding and elaborate design of semiconductors; these material properties include (i) fundamental bulk properties such as band gaps, effective masses, dielectric constants, and optical absorption coefficients; (ii) the properties of point defects, including native defects, residual impurities, and dopants, such as donor, acceptor, and deep-trap levels, and formation energies, which determine the carrier type and density; and (iii) absolute and relative band positions, including ionization potentials and electron affinities at semiconductor surfaces, band offsets at heterointerfaces between dissimilar semiconductors, and Schottky barrier heights at metal–semiconductor interfaces, which are often discussed systematically using band alignment or lineup diagrams. These predictions from first principles have made it possible to elucidate the characteristics of semiconductors used in industry, including group III–V compounds such as GaN, GaP, and GaAs and their alloys with related Al and In compounds; amorphous oxides, represented by In–Ga–Zn–O transparent conductive oxides (TCOs), represented by In2O3, SnO2, and ZnO; and photovoltaic absorber and buffer layer materials such as CdTe and CdS among group II–VI compounds and chalcopyrite CuInSe2, CuGaSe2, and CuIn1‑ x Ga x Se2 (CIGS) alloys, in addition to the prototypical elemental semiconductors Si and Ge. Semiconductors attracting renewed or emerging interest have also been investigated, for instance, divalent tin compounds, including SnO and SnS; wurtzite-derived ternary compounds such as ZnSnN2 and Cu

  13. Analysis of a data base of chalcopyrite semiconductors in 2 and 3 ...

    African Journals Online (AJOL)

    The analysis of the data is currently, in the statisticians, the object of a true phenomenon of mode, characterized at the same time by the passion and the rejection. To determine the characteristics of a whole of data is obviously not an end in itself, but this lapse of memory is unfortunate because the type of data available ...

  14. Computational Study of Chalcopyrite Semiconductors and Their Non-Linear Optical Properties

    National Research Council Canada - National Science Library

    Lambrecht, Walter R

    2007-01-01

    ... (Including cation antisites, cation and anion vacancies) and CdGeAs2; a study of the feasibility of nonciritical phase matching and associated nonlinear optical parameters in CdSiP2 and CdSIAs2...

  15. Schottky contact analysis of photovoltaic chalcopyrite thin film absorbers

    International Nuclear Information System (INIS)

    Schlenker, E.; Mertens, V.; Parisi, J.; Reineke-Koch, R.; Koentges, M.

    2007-01-01

    Current-voltage and capacitance-voltage measurements serve to analyze thermally evaporated Al Schottky contacts on Cu(In, Ga)Se 2 based photovoltaic thin film devices, either taken as grown or etched in a bromine-methanol solution. The characteristics of the Schottky contacts on the as-grown films give evidence for some dielectric layer developing between the metal and the semiconductor. Etching the semiconductor surface prior to evaporation of the Al front contact yields a pure metal-semiconductor behavior, including effects that can be attributed to an additional diode at the Mo contact. Simulations confirm the experimental results

  16. Bioleaching of chalcopyrite and bornite by moderately thermophilic bacteria: an emphasis on their interactions

    Science.gov (United States)

    Zhao, Hong-bo; Wang, Jun; Gan, Xiao-wen; Qin, Wen-qing; Hu, Ming-hao; Qiu, Guan-zhou

    2015-08-01

    Interactions between chalcopyrite and bornite during bioleaching by moderately thermophilic bacteria were investigated mainly by X-ray diffraction, scanning electron microscopy, and electrochemical measurements performed in conjunction with bioleaching experiments. The results showed that a synergistic effect existed between chalcopyrite and bornite during bioleaching by both Acidithiobacillus caldus and Leptospirillum ferriphilum and that extremely high copper extraction could be achieved when chalcopyrite and bornite coexisted in a bioleaching system. Bornite dissolved preferentially because of its lower corrosion potential, and its dissolution was accelerated by the galvanic current during the initial stage of bioleaching. The galvanic current and optimum redox potential of 390-480 mV vs. Ag/AgCl promoted the reduction of chalcopyrite to chalcocite (Cu2S), thus accelerating its dissolution.

  17. Bioleaching of two different genetic types of chalcopyrite and their comparative mineralogical assessment.

    Science.gov (United States)

    Deng, Sha; Gu, Guohua; Ji, Jing; Xu, Baoke

    2018-02-01

    The bioleaching of two different genetic types of chalcopyrite by the moderate thermophile Sulfobacillus thermosulfidooxidans was investigated by leaching behaviors elucidation and their comparative mineralogical assessment. The leaching experiment showed that the skarn-type chalcopyrite (STC) revealed a much faster leaching rate with 33.34% copper extracted finally, while only 23.53% copper was bioleached for the porphyry-type chalcopyrite (PTC). The mineralogical properties were analyzed by XRD, SEM, XPS, and Fermi energy calculation. XRD indicated that the unit cell volume of STC was a little larger than that of PTC. SEM indicated that the surface of STC had more steps and ridges. XPS spectra showed that Cu(I) was the dominant species of copper on the surfaces of the two chalcopyrite samples, and STC had much more copper with lower Cu 2p 3/2 binding energy. Additionally, the Fermi energy of STC was much higher than that of PTC. These mineralogical differences were in good agreement with the bioleaching behaviors of chalcopyrite. This study will provide some new information for evaluating the oxidation kinetics of chalcopyrite.

  18. Synthesis of nanoparticle emulsion collector HNP and its application in microfine chalcopyrite flotation

    Science.gov (United States)

    He, G. C.; Ding, J.; Huang, C. H.; Kang, Q.

    2018-01-01

    Hydrophobic polystyrene nanoparticles bearing thiazole groups named HNP were used as collectors to improve recovery of microfine chalcopyrite in flotation. HNP adsorbs onto microfine particles selectively, which were modified hydrophobically to induce flotation effectively. Particle size and scanning electron microscope analysis for HNP show that HNP is a spherical nano particles with small size, uniform distribution and good dispersion. Infrared spectrum analysis for HNP proved that functional monomer 2-mercapto styrene acrylic thiazole was bonded chemically onto styrene. Flotation test results indicate that HNP is the right collector of chalcopyrite. Especially, the recovery of chalcopyrite is higher than 95% in neutral and acid media. FTIR results reveal that the flotation selectivity of collector HNP is due to strong chemical absorption onto chalcopyrite surface. Zeta potential analysis shows that the zeta potential of chalcopyrite decreased more quickly after interaction with HNP with the increase of pulp pH value, confirming that collector HNP is an anionic collector. Scanning electron microscope conform that HNP has good selective adsorption on chalcopyrite.

  19. Electronic structure of epitaxial chalcopyrite surfaces and interfaces for photovoltaics

    International Nuclear Information System (INIS)

    Hofmann, Andreas

    2012-01-01

    This thesis constitutes a comprehensive study of the surface physics of epitaxial CuInSe 2 films. It comprises analyses of the surface morphology and reconstruction, electronic band structure as well as hetero-junctions relevant to photovoltaic applications. Therefore, especially the aspect of stoichiometry variation from the CuInSe 2 to the copper-deficient defect phases was considered. Preparation and analysis was completely performed under ultra-high vacuum conditions in order to ensure the investigation of well-defined samples free of contaminants. For some of the analysis techniques, single-crystalline samples are indispensable: They allow for the determination of surface periodicity by low-energy electron diffraction (LEED). In combination with concentration depth profiling by angle-resolved x-ray photoemission, to types of surface reconstructions could be distinguished for the near-stoichiometric CuInSe 2 (112) surface. In the copper-rich case, it is stabilized by Cu In anti-site defects and on the indium-rich side by 2 V Cu defects, as predicted by surface total energy calculations by Jaffe and Zunger. Both configurations correspond to a c(4 x 2) reconstruction of the zinc blende type (111) surface. For the defect compound CuIn 3 Se 5 , a sphalerite order of the surface was found, which points at a weakening or absence of the chalcopyrite order in the bulk of the material. The unusual stability of the (112) surface could also be proven by comparison with the reconstruction and surface order of (001) and (220) surfaces. The results from surface analysis were used to measure the valence band structure of the epitaxial samples by synchrotron-based angle-resolved photoelectron spectroscopy. The CuInSe 2 (001) surface gives access to the high symmetry directions Γ-T and Γ-N of momentum space. By contrasting the data obtained for the stoichiometric surface with the copper-poor defect compound, a reduction of the valence band dispersion and a broadening of

  20. Ternary System with Controlled Structure: A New Strategy toward Efficient Organic Photovoltaics.

    Science.gov (United States)

    Cheng, Pei; Wang, Rui; Zhu, Jingshuai; Huang, Wenchao; Chang, Sheng-Yung; Meng, Lei; Sun, Pengyu; Cheng, Hao-Wen; Qin, Meng; Zhu, Chenhui; Zhan, Xiaowei; Yang, Yang

    2018-02-01

    Recently, a new type of active layer with a ternary system has been developed to further enhance the performance of binary system organic photovoltaics (OPV). In the ternary OPV, almost all active layers are formed by simple ternary blend in solution, which eventually leads to the disordered bulk heterojunction (BHJ) structure after a spin-coating process. There are two main restrictions in this disordered BHJ structure to obtain higher performance OPV. One is the isolated second donor or acceptor domains. The other is the invalid metal-semiconductor contact. Herein, the concept and design of donor/acceptor/acceptor ternary OPV with more controlled structure (C-ternary) is reported. The C-ternary OPV is fabricated by a sequential solution process, in which the second acceptor and donor/acceptor binary blend are sequentially spin-coated. After the device optimization, the power conversion efficiencies (PCEs) of all OPV with C-ternary are enhanced by 14-21% relative to those with the simple ternary blend; the best PCEs are 10.7 and 11.0% for fullerene-based and fullerene-free solar cells, respectively. Moreover, the averaged PCE value of 10.4% for fullerene-free solar cell measured in this study is in great agreement with the certified one of 10.32% obtained from Newport Corporation. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. The n-Cu0.9Ag0.1In3Se5 chalcopyrite, electronic as well as ionic conductor

    International Nuclear Information System (INIS)

    Diaz, R

    2008-01-01

    A resistance increase with time of the n-Cu 0.9 Ag 0.1 In 3 Se 5 chalcopyrite has been observed. This new effect is analysed in terms of a hypothesis of ion migration and Schottky barrier formation. These results might explain why different solar cell efficiencies are obtained for the chalcopyrites, CuInSe 2 and CuIn x Ga 1-x Se 2 , when an In-rich film is deposited on top of the chalcopyrite. In these solar cells, ion migration can exist and a new effect appears similar to the one observed in our compound. The ions, probably the cations, are moved by the electrical field towards the cathode. A gradient of mobile ions appears across the sample and the positive charge is accumulated near this electrode such that it varies the metal-semiconductor interface. This interface is a Schottky barrier where the contact potential is a function of time due to the arrival of ions. The electrical measurements have been carried out on a solid state device, graphite/n-Cu 0.9 Ag 0.1 In 3 Se 5 /graphite. The current intensity and the potential drop across the sample have been measured with time when a constant electrical potential is applied for 600 s at dark or under ultraviolet illumination and at room temperature. A comparative study in similar electrical conditions is done; the current intensity difference and the potential drop across the difference (under ultraviolet illumination minus at dark) are not constant and both measurements increase with time

  2. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  3. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  4. Methods of forming semiconductor devices and devices formed using such methods

    Science.gov (United States)

    Fox, Robert V; Rodriguez, Rene G; Pak, Joshua

    2013-05-21

    Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode.

  5. Energy distribution in semiconductors

    International Nuclear Information System (INIS)

    Ance, C.

    1979-01-01

    For various semiconductors the dispersive energy Esub(d) defined in the Wemple-Didomenico model is connected with the covalent and ionic energies Esub(h) and C. A continuous curve of ionicity against the ratio of the two energies Esub(A) and Esub(B), connected to Esub(h) and C is reported. Afromowitz's model is applied to the ternary compounds Gasub(1-x)Alsub(x)Sb using optical decomposition. From these results the average energy gap Esub(g) is given by Esub(g) = D 0 M 0 sup((IB))/(epsilon 1 (0)-1) where M 0 sup((IB)) is the interband transition contribution to the optical moment M 0 . (author)

  6. New ternary superconducting germanides

    Science.gov (United States)

    Moschalkov, V. V.; Muttik, I. G.; Samarin, N. A.; Seropegin, Yu. D.; Rudometkina, M. V.

    1991-12-01

    We have studied the structure, electrical and magnetic properties of new ternary compounds with germanium and transition metals of IV and V groups (Ti 0.7V 0.3Ge 3, Hf 2V 3Ge, Zr 32-36V 32-36Ge 30-32, Hf 2Nb 3Ge 4, HfVGe, Zr 15-17V 39-40Ge 44-45, Hf 10.8-21.7V 36.0-42.8). The homogeneity fields for all new phases are determined. Resistivity (T) and magnetic susceptibility χ(T) are investigated at T=4.2…300 K. Two new superconductors have been found - Zr 32-36V 32-36Ge 30-32 and HfVGe with T c=4.7 K and 5.7 K, respectively.

  7. Galvanic Interaction between Chalcopyrite and Pyrite with Low Alloy and High Carbon Chromium Steel Ball

    Directory of Open Access Journals (Sweden)

    Asghar Azizi

    2013-01-01

    Full Text Available This study was aimed to investigate the galvanic interaction between pyrite and chalcopyrite with two types of grinding media (low alloy and high carbon chromium steel ball in grinding of a porphyry copper sulphide ore. Results indicated that injection of different gases into mill altered the oxidation-reduction environment during grinding. High carbon chromium steel ball under nitrogen gas has the lowest galvanic current, and low alloy steel ball under oxygen gas had the highest galvanic current. Also, results showed that the media is anodic relative to pyrite and chalcopyrite, and therefore pyrite or chalcopyrite with a higher rest potential acted as the cathode, whilst the grinding media with a lower rest potential acted as the anode, when they are electrochemically contacted. It was also found that low alloy steel under oxygen produced the highest amount of EDTA extractable iron in the slurry, whilst high carbon chromium steel under nitrogen atmosphere led to the lowest amount.

  8. Chalcopyrite Dissolution at 650 mV and 750 mV in the Presence of Pyrite

    Directory of Open Access Journals (Sweden)

    Yubiao Li

    2015-08-01

    Full Text Available The dissolution of chalcopyrite in association with pyrite in mine waste results in the severe environmental issue of acid and metalliferous drainage (AMD. To better understand chalcopyrite dissolution, and the impact of chalcopyrite’s galvanic interaction with pyrite, chalcopyrite dissolution has been examined at 75 °C, pH 1.0, in the presence of quartz (as an inert mineral and pyrite. The presence of pyrite increased the chalcopyrite dissolution rate by more than five times at Eh of 650 mV (SHE (Cu recovery 2.5 cf. 12% over 132 days due to galvanic interaction between chalcopyrite and pyrite. Dissolution of Cu and Fe was stoichiometric and no pyrite dissolved. Although the chalcopyrite dissolution rate at 750 mV (SHE was approximately four-fold greater (Cu recovery of 45% within 132 days as compared to at 650 mV in the presence of pyrite, the galvanic interaction between chalcopyrite and pyrite was negligible. Approximately all of the sulfur from the leached chalcopyrite was converted to S0 at 750 mV, regardless of the presence of pyrite. At this Eh approximately 60% of the sulfur associated with pyrite dissolution was oxidised to S0 and the remaining 40% was released in soluble forms, e.g., SO42−.

  9. Combined DFT and XPS investigation of iodine anions adsorption on the sulfur terminated (001) chalcopyrite surface

    Energy Technology Data Exchange (ETDEWEB)

    Li, Kui, E-mail: likui9606@stu.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Zhao, Yaolin, E-mail: zhaoyaolin@mail.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Zhang, Peng, E-mail: zp32@qq.com [Sino Shaanxi Nuclear Industry Group, Xi’an 710100 (China); He, Chaohui, E-mail: hechaohui@mail.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Deng, Jia, E-mail: djkokocase@stu.xjtu.edu.cn [School of Nuclear Science and Technology, Xi’an Jiaotong University, Xi’an 710049 (China); Ding, Shujiang, E-mail: dingsj@mail.xjtu.edu.cn [Department of Applied Chemistry, School of Science, Xi’an Jiaotong University, Xi’an 710049 (China); Shi, Weiqun, E-mail: shiwq@ihep.ac.cn [Key Laboratory of Nuclear Radiation and Nuclear Energy Technology and Key Laboratory for Biomedical Effects of Nanomaterials and Nanosafety, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049 (China)

    2016-12-30

    Highlights: • Metal surface sites of (001)-S surface of chalcopyrite show significant chemical affinity to iodide and iodate. • The energetically favorable active site is copper for iodide adsorption and iron for iodate adsorption, respectively. • Iodate undergoes a dissociative adsorption on the copper site of chalcopyrite surface. - Abstract: The adsorption of iodine anions (iodide and iodate) on the sulfur terminated (001) chalcopyrite surface has been systematically investigated combining first-principles calculations based on density functional theory (DFT) with X-ray photoelectron spectroscopy (XPS) measurements. Based on the total energy calculations and geometric optimization, the thermodynamically preferred site was copper atom for iodide adsorption and iron atom for iodate adsorption, respectively. In the case of Cu site mode, the iodate underwent a dissociative adsorption, where one I−O bond of iodate ion was broken and the dissociative oxygen atom adsorbed on the adjacent sulphur site. Projected density of states (PDOS) analysis further clarified the interaction mechanism between active sites of chalcopyrite surface and adsorbates. In addition, full-range XPS spectra qualitatively revealed the presence of iodine on chalcopyrite surface. High resolution XPS spectra of the I 3d peaks after adsorption verified the chemical environment of iodine. The binding energies of 618.8 eV and 623.5 eV for I 3d{sub 5/2} peaks unveiled that the adsorption of iodide and iodate ions on copper-iron sulfide minerals was the result of formation of low solubility metal iodides precipitate. Also two I 3d peaks with low intensity around 618 eV and 630 eV might be related to the inorganic reduction of iodate to iodide by reducing S{sup 2−} ion of chalcopyrite.

  10. The influence of mechanical activation of chalcopyrite on the selective leaching of copper by sulphuric acid

    Directory of Open Access Journals (Sweden)

    Achimovičová, M.

    2006-01-01

    Full Text Available In this paper chalcopyrite, CuFeS2, has been selective leached by H2SO4 as leaching agent (170 g/dm3 in procedure of hydrometallurgical production of copper. Mechanical activation of the chalcopyrite resulted in mechanochemical surface oxidation as well as in the mineral surface and bulk disordering. Furthermore, the formation of agglomerates during grinding was also occured. Surface changes of the samples using infrared spectroscopy and scanning electron microscopy methods were investigated before and after leaching. The leaching rate, specific surface area, structural disorder as well as copper extraction increased with the mechanical activation of mineral.

  11. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  12. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  13. A Moderately Thermophilic Mixed Microbial Culture for Bioleaching of Chalcopyrite Concentrate at High Pulp Density

    Science.gov (United States)

    Wang, Yuguang; Zeng, Weimin; Qiu, Guanzhou; Chen, Xinhua

    2014-01-01

    Three kinds of samples (acid mine drainage, coal mine wastewater, and thermal spring) derived from different sites were collected in China. Thereafter, these samples were combined and then inoculated into a basal salts solution in which different substrates (ferrous sulfate, elemental sulfur, and chalcopyrite) served as energy sources. After that, the mixed cultures growing on different substrates were pooled equally, resulting in a final mixed culture. After being adapted to gradually increasing pulp densities of chalcopyrite concentrate by serial subculturing for more than 2 years, the final culture was able to efficiently leach the chalcopyrite at a pulp density of 20% (wt/vol). At that pulp density, the culture extracted 60.4% of copper from the chalcopyrite in 25 days. The bacterial and archaeal diversities during adaptation were analyzed by denaturing gradient gel electrophoresis and constructing clone libraries of the 16S rRNA gene. The results show that the culture consisted mainly of four species, including Leptospirillum ferriphilum, Acidithiobacillus caldus, Sulfobacillus acidophilus, and Ferroplasma thermophilum, before adapting to a pulp density of 4%. However, L. ferriphilum could not be detected when the pulp density was greater than 4%. Real-time quantitative PCR was employed to monitor the microbial dynamics during bioleaching at a pulp density of 20%. The results show that A. caldus was the predominant species in the initial stage, while S. acidophilus rather than A. caldus became the predominant species in the middle stage. F. thermophilum accounted for the greatest proportion in the final stage. PMID:24242252

  14. Isolation of a strain of Acidithiobacillus caldus and its role in bioleaching of chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Q.G.; Bo, F.; Bo, Z.H.; Xi, L.; Jian, G.; Fei, L.F.; Hua, C.X. [Central South University of Technology, Changsha (China)

    2007-09-15

    A moderately thermophilic and acidophilic sulfur-oxidizing bacterium named S-2, was isolated from coal heap drainage. The bacterium was motile, Gramnegative, rod-shaped, measured 0.4 to 0.6 by 1 to 2 gm, and grew optimally at 42-45{sup o}C and an initial pH of 2.5. The strain S-2 grew autotrophically by using elemental sulfur, sodium thiosulfate and potassium tetrathionate as energy sources. The strain did not use organic matter and inorganic minerals including ferrous sulfate, pyrite and chalcopyrite as energy sources. The morphological, biochemical, physiological characterization and analysis based on 16S rRNA gene sequence indicated that the strain S2 is most closely related to Acidithiobacillus caldus (> 99% similarity in gene sequence). The combination of the strain S-2 with Leptospirillum ferriphilum or Acidithiobacillus ferrooxidans in chalcopyrite bioleaching improved the copper-leaching efficiency. Scanning electron microscope (SEM) analysis revealed that the chalcopyrite surface in a mixed culture of Leptospirillum ferriphilum and Acidithiobacillus caldus was heavily etched. The energy dispersive X-ray (EDX) analysis indicated that Acidithiobacillus caldus has the potential role to enhance the recovery of copper from chalcopyrite by oxidizing the sulfur formed during the bioleaching progress.

  15. Selective depression mechanism of ferric chromium lignin sulfonate for chalcopyrite-galena flotation separation

    Science.gov (United States)

    Yu, Jin-sheng; Liu, Run-qing; Wang, Li; Sun, Wei; Peng, Hong; Hu, Yue-hua

    2018-05-01

    Selective recovery of chalcopyrite-galena ore by flotation remains a challenging issue. The development of highly efficient, low-cost, and environmentally friendly depressants for this flotation is necessary because most of available reagents (e.g., K2Cr2O4) are expensive and adversely affect the environment. In this study, ferric chromium lignin sulfonate (FCLS), which is a waste-product from the paper and pulp industry, was introduced as a selective depressant for galena with butyl xanthate (BX) as a collector. Results show that the residue recovery of Pb in Cu concentrate was substantially reduced to 4.73% using FCLS compared with 10.71% using the common depressant K2Cr2O4. The underlying mechanisms were revealed using zeta-potential measurements and X-ray photoelectron spectroscopy (XPS). Zeta-potential measurements revealed that FCLS was more efficiently absorbed onto galena than onto chalcopyrite. XPS measurements further suggested that FCLS enhanced the surface oxidation of galena but prevented that of chalcopyrite. Thus, FCLS could be a potential candidate as a depressant for chalcopyrite-galena flotation because of its low cost and its lack of detrimental effects on the environment.

  16. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  17. Ternary alloys based on II-VI semiconductor compounds

    CERN Document Server

    Tomashyk, Vasyl; Shcherbak, Larysa

    2013-01-01

    Phase Equilibria in the Systems Based on ZnSSystems Based on ZnSeSystems Based on ZnTeSystems Based on CdSSystem Based on CdSeSystem Based on CdTeSystems Based on HgSSystems Based on HgSeSystems Based on HgTeIndexReferences appear at the end of each chapter.

  18. Fundamental Flotation Behaviors of Chalcopyrite and Galena Using O-Isopropyl-N-Ethyl Thionocarbamate as a Collector

    Directory of Open Access Journals (Sweden)

    Yongjie Bu

    2018-03-01

    Full Text Available Copper and lead are two important and widely used metals in industry. Chalcopyrite (CuFeS2 is associated with galena (PbS in ore, and it has been a research hotspot in separating galena from chalcopyrite by flotation. In this study, the flotation behaviors of chalcopyrite and galena were studied through flotation tests, adsorption measurements, solution chemistry calculation, Fourier transform infrared spectroscopy (FTIR and molecular dynamics (MD simulations. The results show that the floatability of chalcopyrite is better than that of galena in the presence of O-isopropyl-N-ethyl thionocarbamate (IPETC, and the recovery difference between chalcopyrite and galena is about 20% when IPETC is 7 × 10−4 mol/L at pH 9.5, while the floatability difference between the two minerals is significant. Competitive adsorption of OH− and IPETC on mineral surfaces leads to lower floatability of galena than that of chalcopyrite. IPETC is able to remove the hydration layer on mineral surfaces and then adsorb on active sites. The floatability of minerals is enhanced with the increase of their hydrophobicity. This study provides a reference to separate galena from chalcopyrite.

  19. Ternary Weighted Function and Beurling Ternary Banach Algebra l1ω(S

    Directory of Open Access Journals (Sweden)

    Mehdi Dehghanian

    2011-01-01

    Full Text Available Let S be a ternary semigroup. In this paper, we introduce our notation and prove some elementary properties of a ternary weight function ω on S. Also, we make ternary weighted algebra l1ω(S and show that l1ω(S is a ternary Banach algebra.

  20. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  1. True ternary fission in 310126X

    International Nuclear Information System (INIS)

    Banupriya, B.; Vijayaraghavan, K.R.; Balasubramaniam, M.

    2015-01-01

    All possible combinations are minimized by the two dimensional minimization process and minimized with respect to neutron numbers and proton numbers of the fragments. Potential energy is low and Q - value is high at true ternary fission region. It shows that true ternary mode is the dominant mode in the ternary fission of superheavy nuclei. Also, the results show that the fragments with neutron magic numbers are the dominant one in the ternary fission of superheavy nuclei whereas the fragments with proton magic numbers are the dominant one in the ternary fission of heavy nuclei

  2. Short communication: Adverse effect of surface-active reagents on the bioleaching of pyrite and chalcopyrite by Thiobacillus ferrooxidans.

    Science.gov (United States)

    Huerta, G; Escobar, B; Rubio, J; Badilla-Ohlbaum, R

    1995-09-01

    Oxidation of Fe(II) iron and bioleaching of pyrite and chalcopyrite by Thiobacillus ferrooxidans was adversely affected by isopropylxanthate, a flotation agent, and by LIX 984, a solvent-extraction agent, each at ≤ 1 g/l. The reagents/l were adsorbed on the bacterial surface, decreasing the bacteria's development and preventing biooxidation. Both reagents inhibited the bioleaching of pyrite and LIX 984 also inhibited the bioleaching of chalcopyrite.

  3. Nanostructured Semiconductor Electrodes for Solar Energy Conversion and Innovations in Undergraduate Chemical Lab Curriculum

    Science.gov (United States)

    Lee, Sudarat

    This dissertation presents the methodology and discussion of preparing nanostructured, high aspect ratio p-type phosphide-based binary and ternary semiconductors via "top-down" anodic etching, a process which creates nanostructures from a large parent entity, and "bottom-up" vapor-liquid-solid growth, a mechanism which builds up small clusters of molecules block-by-block. Such architecture is particularly useful for semiconducting materials with incompatible optical absorption depth and charge carrier diffusion length, as it not only relaxes the requirement for high-grade crystalline materials, but also increases the carrier collection efficiencies for photons with energy greater than or equal to the band gap. The main focus of this dissertation is to obtain nanostructured p-type phosphide semiconductors for photoelectrochemical (PEC) cell applications. Chapter II in the thesis describes a methodology for creating high-aspect ratio p-GaP that function as a photocathode under white light illumination. Gallium phosphide (GaP, band gap: 2.26 eV) is a suitable candidate for solar conversion and energy storage due to its ability to generate large photocurrent and photovoltage to drive fuel-forming reactions. Furthermore, the band edge positions of GaP can provide sufficient kinetics for the reduction of protons and carbon dioxide. The structure is prepared by anodic etching, and the resulting macroporous structures are subsequently doped with Zn by thermally driving in Zn from conformal ZnO films prepared by atomic layer deposition (ALD). The key finding of this work is a viable doping strategy involving ALD ZnO films for making functioning p-type GaP nanostructures. Chapter III compares the GaP nanowires grown from gold (Au) and tin (Sn) VLS catalysts in a benign solid sublimation growth scheme in terms of crystal structure and photoactivity. Sn is less noble than Au, allowing complete removal of Sn metal catalysts from the nanowires through wet chemical etching which

  4. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  5. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  6. Grain-size distributions and grain boundaries of chalcopyrite-type thin films

    International Nuclear Information System (INIS)

    Abou-Ras, D.; Schorr, S.; Schock, H.W.

    2007-01-01

    CuInSe 2 , CuGaSe 2 , Cu(In,Ga)Se 2 and CuInS 2 thin-film solar absorbers in completed solar cells were studied in cross section by means of electronbackscatter diffraction. From the data acquired, grain-size distributions were extracted, and also the most frequent grain boundaries were determined. The grain-size distributions of all chalcopyrite-type thin films studied can be described well by lognormal distribution functions. The most frequent grainboundary types in these thin films are 60 - left angle 221 right angle tet and 71 - left angle 110 right angle tet (near) Σ3 twin boundaries. These results can be related directly to the importance of {112} tet planes during the topotactical growth of chalcopyrite-type thin films. Based on energetic considerations, it is assumed that the most frequent twin boundaries exhibit a 180 - left angle 221 right angle tet constellation. (orig.)

  7. Flotation performances and surface properties of chalcopyrite with xanthate collector added before and after grinding

    Science.gov (United States)

    Peng, Huiqing; Wu, Di; Abdelmonem, Mohamed

    In this study, effects of the collector added before grinding and after grinding on the subsequent flotation and mineral surface properties were investigated. The pH was controlled at 10 during the grinding and flotation processes opened to the atmosphere. With enough amounts of sodium butyl xanthate addition, adding the collector before grinding recovered more chalcopyrite than adding it after grinding in single mineral flotation. The Eh of each ground pulp before and after conditioning were measured and it was found that adding collector before grinding obtained higher and relatively suitable pulp potential for chalcopyrite flotation. Particle size analyses of the flotation products indicate that the different flotation recoveries occurred due to the different flotation losses in fine particles (flotation feedings and found that more carbon and oxygen, and less iron were remained on mineral surfaces when the collector was added before grinding, due to the higher collector adsorption capacity, larger free oxygen adsorbance and less iron oxide/hydroxide species.

  8. MODELLING CHALCOPYRITE LEACHING BY Fe+3 IONS WITH THE SHRINKING CORE MODEL

    Directory of Open Access Journals (Sweden)

    Rodrigo Rangel Porcaro

    2015-03-01

    Full Text Available Chalcopyrite leaching by ferric iron is considered a slow process with low copper recovery; a phenomenon ascribed to the passivation of the mineral surface during leaching. Thus, the current study investigated the leaching kinetics of a high purity chalcopyrite sample in the presence of ferric sulfate as oxidant. The effects of the stirring rate, temperature, Eh and Fe3+ concentration on copper extraction were assessed. The leaching data could be described by the shirking core model (SCM for particles of unchanging size and indicated diffusion in the ash layer as the rate-controlling step with a high activation energy (103.9±6.5kJ/mol; likely an outcome of neglecting the effect of particle size distribution (PSD on the kinetics equations. Both the application of the quasi-steady-state assumption to solid-liquid systems and the effect of the particle size distribution on the interpretation of kinetics data are also discussed.

  9. Current scenario of chalcopyrite bioleaching: a review on the recent advances to its heap-leach technology.

    Science.gov (United States)

    Panda, Sandeep; Akcil, Ata; Pradhan, Nilotpala; Deveci, Haci

    2015-11-01

    Chalcopyrite is the primary copper mineral used for production of copper metal. Today, as a result of rapid industrialization, there has been enormous demand to profitably process the low grade chalcopyrite and "dirty" concentrates through bioleaching. In the current scenario, heap bioleaching is the most advanced and preferred eco-friendly technology for processing of low grade, uneconomic/difficult-to-enrich ores for copper extraction. This paper reviews the current status of chalcopyrite bioleaching. Advanced information with the attempts made for understanding the diversity of bioleaching microorganisms; role of OMICs based research for future applications to industrial sectors and chemical/microbial aspects of chalcopyrite bioleaching is discussed. Additionally, the current progress made to overcome the problems of passivation as seen in chalcopyrite bioleaching systems have been conversed. Furthermore, advances in the designing of heap bioleaching plant along with microbial and environmental factors of importance have been reviewed with conclusions into the future prospects of chalcopyrite bioleaching. Copyright © 2015 Elsevier Ltd. All rights reserved.

  10. Evolution of Sulfobacillus thermosulfidooxidans secreting alginate during bioleaching of chalcopyrite concentrate.

    Science.gov (United States)

    Yu, R-L; Liu, A; Liu, Y; Yu, Z; Peng, T; Wu, X; Shen, L; Liu, Y; Li, J; Liu, X; Qiu, G; Chen, M; Zeng, W

    2017-06-01

    To explore the distribution disciplinarian of alginate on the chalcopyrite concentrate surface during bioleaching. The evolution of Sulfobacillus thermosulfidooxidans secreting alginate during bioleaching of chalcopyrite concentrate was investigated through gas chromatography coupled with mass spectrometry (GC-MS) and confocal laser scanning microscope (CLSM), and the critical synthetic genes (algA, algC, algD) of alginate were analysed by real-time polymerase chain reaction (RT-PCR). The GC-MS analysis results indicated that there was a little amount of alginate formed on the mineral surface at the early stage, while increasing largely to the maximum value at the intermediate stage, and then kept a stable value at the end stage. The CLSM analysis of chalcopyrite slice showed the same variation trend of alginate content on the mineral surface. Furthermore, the RT-PCR results showed that during the early stage of bioleaching, the expressions of the algA, algC and the algD genes were all overexpressed. However, at the final stage, the algD gene expression decreased in a large scale, and the algA and algC decreased slightly. This expression pattern was attributed to the fact that algA and algC genes were involved in several biosynthesis reactions, but the algD gene only participated in the alginate biosynthesis and this was considered as the key gene to control alginate synthesis. The content of alginate on the mineral surface increased largely at the beginning of bioleaching, and remained stable at the end of bioleaching due to the restriction of algD gene expression. Our findings provide valuable information to explore the relationship between alginate formation and bioleaching of chalcopyrite. © 2017 The Society for Applied Microbiology.

  11. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    OpenAIRE

    Wang Lan; Lin Xianzhong; Ennaoui Ahmed; Wolf Christian; Lux-Steiner Martha Ch.; Klenk Reiner

    2016-01-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating ...

  12. Passivation of chalcopyrite during the leaching with sulphuric acid solution in presence of sodium nitrate

    Directory of Open Access Journals (Sweden)

    Sokić Miroslav D.

    2010-01-01

    Full Text Available In this work, the process of the chalcopyrite leaching in sulphuric acid solution was investigated. Sodium nitrate was used as oxidant in the leaching process. Chemical reactions of leaching and their thermodynamic possibilities are predicted based on the calculated Gibbs energies and analysis of E−pH diagrams. The negative values of the Gibbs energy show that all chemical reactions are thermodynamically feasible at atmospheric pressure and in a temperature range 25-90°C. At high electrode potential and low pH values, Cu2+, Fe2+ and Fe3+ ions exist in water solutions. The increase of temperature reduces the probability of Fe3+ ion existence in the system. The chalcopyrite concentrate, enriched in the “Rudnik” flotation plant, with 27.08% Cu, 25.12% Fe, 4.15% Zn and 2.28% Pb was used in the work. XRD and DTA analysis of the concentrate reveals that the sample contains mainly the chalcopyrite with small amount of sphalerite. For the description of the reaction of leaching process the leach residuals, obtained at different conditions, were chosen for XRD, TG/DTA and SEM/EDX analyses. The elemental sulphur and chalcopyrite phases identified in leach residuals confirm our prediction that the elemental sulphur is formed during the leaching process. Accordingly, elemental sulphur is the main product of the reaction, while a minor amount of sulphide sulphur is oxidized to sulphate during the leaching. The sulphur formed during the reaction was precipitated at the particle surfaces, and slowed down the leaching rate in the final stage of leaching process. In the initial stage, the reaction rate was controlled by the surface reaction. The mechanism, latter has been changed into a diffusion controlled one.

  13. Diffusion in copper sulphides. An experimental study of chalcocite, chalcopyrite and bornite

    International Nuclear Information System (INIS)

    Berger, R.; Bucur, R.V.

    1996-01-01

    Diffusion measurements on three copper-containing sulphides have been performed by an electrochemical potentiometric method. Chalcocite (Cu 2 S), Chalcopyrite (CuFeS 2 ) and Bornite (Cu 5 FeS 4 ) were synthesized and fully characterized by X-ray diffraction. The diffusivities were measured on compacted powders yielding both the chemical and the component diffusion coefficients in the temperature range 5-50 C. The chemical diffusion coefficients found were: for Chalcocite 38.7*exp (-5600/T), for Chalcopyrite 15.4*exp(-6000/T) and for Bornite 14.4*exp(-4900/T). The diffusion coefficient for Chalcocite is in good agreement with values found previously, and a reasonable agreement is also found for Chalcopyrite and Bornite when our data are compared with values acquired at much higher temperatures with a different technique. The activation energies (here on a Kelvin scale) are remarkably similar for the three sulfides, considering that their relative errors are of a 10% magnitude, which indicates that the bonding strengths and the diffusion mechanisms are similar. The chemical diffusion coefficients which enter the empirical Fick's diffusion laws that describe concentration changes, are of the order of exp(-8) to exp (-7) cm 2 /s at room temperature. Such values bring the ion mobilities near values found for solid state 'fast ion conductors', used as electrolytes at elevated temperatures. 17 refs, 8 figs, 5 tabs

  14. Synthesis of Novel Ether Thionocarbamates and Study on Their Flotation Performance for Chalcopyrite

    Directory of Open Access Journals (Sweden)

    Gang Zhao

    2016-09-01

    Full Text Available Novel ether thionocarbamates, O-butoxy isopropyl-N-ethoxycarbonyl thionocarbamate (BIPECTC and O-(2-butoxy-1-methylethoxy isopropyl-N-ethoxycarbonyl thionocarbamate (BMIPECTC, were synthesized in this study. Their collecting efficiencies in the flotation of chalcopyrite were investigated using flotation tests, adsorption measurements, ultraviolet spectra (UV and Fourier transform-infrared spectroscopy (FT-IR and density functional theory (DFT calculations. The synthesized ether thionocarbamates showed better frothing properties than methyl-isobutyl-carbinol (MIBC and stronger affinity to chalcopyrite compared with O-isopropyl-N-ethyl thionocarbamate (IPETC and O-isobutyl-N-ethoxycarbonyl thionocarbamate (IBECTC. UV spectra analysis showed that the ether thionocarbamates react with Cu2+, with the exception of Fe2+, Ni2+, Zn2+ and Pb2+. Additionally, it was further confirmed by FTIR spectra that a chemical reaction occurs between copper ion and BIPECTC and BMIPECTC. The adsorption capacity measurements revealed that chalcopyrite exhibits good adsorption ability for ether thionocarbamates at an approximate pH of 8–10, which agrees with the flotation tests. The quantum chemistry calculation results indicated that the ether thionocarbamates exhibit stronger collecting ability for copper mineral in terms of frontier molecular orbital analysis, binding model simulation with copper ions and the molecular hydrophobicity compared with IPETC and IBECTC. The computational results are in very good agreement with the experimental results.

  15. Diffusion in copper sulphides. An experimental study of chalcocite, chalcopyrite and bornite

    Energy Technology Data Exchange (ETDEWEB)

    Berger, R; Bucur, R V [Uppsala Univ. (Sweden). Inst. of Chemistry

    1996-01-01

    Diffusion measurements on three copper-containing sulphides have been performed by an electrochemical potentiometric method. Chalcocite (Cu{sub 2}S), Chalcopyrite (CuFeS{sub 2}) and Bornite (Cu{sub 5}FeS{sub 4}) were synthesized and fully characterized by X-ray diffraction. The diffusivities were measured on compacted powders yielding both the chemical and the component diffusion coefficients in the temperature range 5-50 C. The chemical diffusion coefficients found were: for Chalcocite 38.7*exp (-5600/T), for Chalcopyrite 15.4*exp(-6000/T) and for Bornite 14.4*exp(-4900/T). The diffusion coefficient for Chalcocite is in good agreement with values found previously, and a reasonable agreement is also found for Chalcopyrite and Bornite when our data are compared with values acquired at much higher temperatures with a different technique. The activation energies (here on a Kelvin scale) are remarkably similar for the three sulfides, considering that their relative errors are of a 10% magnitude, which indicates that the bonding strengths and the diffusion mechanisms are similar. The chemical diffusion coefficients which enter the empirical Fick`s diffusion laws that describe concentration changes, are of the order of exp(-8) to exp (-7) cm{sup 2}/s at room temperature. Such values bring the ion mobilities near values found for solid state `fast ion conductors`, used as electrolytes at elevated temperatures. 17 refs, 8 figs, 5 tabs.

  16. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  17. Some new ternary linear codes

    Directory of Open Access Journals (Sweden)

    Rumen Daskalov

    2017-07-01

    Full Text Available Let an $[n,k,d]_q$ code be a linear code of length $n$, dimension $k$ and minimum Hamming distance $d$ over $GF(q$. One of the most important problems in coding theory is to construct codes with optimal minimum distances. In this paper 22 new ternary linear codes are presented. Two of them are optimal. All new codes improve the respective lower bounds in [11].

  18. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  19. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  20. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  1. Ternary scandium and transition metals germanides

    International Nuclear Information System (INIS)

    Kotur, B.Ya.

    1992-01-01

    Brief review of data on phase diagram of ternary Sc-Me-Ge systems (Me-d - , f-transition element) is given. Isothermal sections at 870 and 1070 K of 17 ternary systems are plotted. Compositions and their structural characteristics are presented. Variability of crystal structure is typical for ternary scandium germanides: 70 compounds with the studied structure belong to 23 structural types. Ternary germanides isostructural to types of Sm 4 Ge 4 , ZrCrSi 2 , ZrNiAl, ScCeSi, TiNiSi U 4 Re 7 Si 6 145 compounds from 70 under investigation are mostly formed in studied systems

  2. Study of thermal properties and the effect of carrier concentration in the ternary compound Ag6Ge10P12

    International Nuclear Information System (INIS)

    Ahmad, K.A.

    1990-01-01

    In this work the thermal properties of the ternary semiconducting compounds (Ag6Ge10P12) have been investigated. Single crystal samples prepared by Bridgman technique low temperature cryostat are illustrated which is suitable to control temperature from liquid nitrogen up to room temperature. The work contains theoretical and experimental study on binary and ternary semiconductors. Also it illustrates the experimental results of thermoelectric properties of AG6Ge10P12 samples as well as the calculated effective mass, Fermi energy and their analysis throughout the temperature range between 80-300 K. 3 tabs.; 18 figs.; 57 refs

  3. Investigation of energy gene expressions and community structures of free and attached acidophilic bacteria in chalcopyrite bioleaching.

    Science.gov (United States)

    Zhu, Jianyu; Jiao, Weifeng; Li, Qian; Liu, Xueduan; Qin, Wenqing; Qiu, Guanzhou; Hu, Yuehua; Chai, Liyuan

    2012-12-01

    In order to better understand the bioleaching mechanism, expression of genes involved in energy conservation and community structure of free and attached acidophilic bacteria in chalcopyrite bioleaching were investigated. Using quantitative real-time PCR, we studied the expression of genes involved in energy conservation in free and attached Acidithiobacillus ferrooxidans during bioleaching of chalcopyrite. Sulfur oxidation genes of attached A. ferrooxidans were up-regulated while ferrous iron oxidation genes were down-regulated compared with free A. ferrooxidans in the solution. The up-regulation may be induced by elemental sulfur on the mineral surface. This conclusion was supported by the results of HPLC analysis. Sulfur-oxidizing Acidithiobacillus thiooxidans and ferrous-oxidizing Leptospirillum ferrooxidans were the members of the mixed culture in chalcopyrite bioleaching. Study of the community structure of free and attached bacteria showed that A. thiooxidans dominated the attached bacteria while L. ferrooxidans dominated the free bacteria. With respect to available energy sources during bioleaching of chalcopyrite, sulfur-oxidizers tend to be on the mineral surfaces whereas ferrous iron-oxidizers tend to be suspended in the aqueous phase. Taken together, these results indicate that the main role of attached acidophilic bacteria was to oxidize elemental sulfur and dissolution of chalcopyrite involved chiefly an indirect bioleaching mechanism.

  4. Study of the Effect of Sodium Sulfide as a Selective Depressor in the Separation of Chalcopyrite and Molybdenite

    Directory of Open Access Journals (Sweden)

    Huiqing Peng

    2017-03-01

    Full Text Available Two kinds of collectors, sodium butyl xanthate and kerosene, and a depressor, sodium sulfide, were used in this research. The study applied flotation tests, pulp potential measurements, contact angle measurements, adsorption calculations, and Fourier Transform Infrared Spectroscopy (FTIR analyses to demonstrate the correlation between reagents and minerals. For xanthate collectors, the best flotation responses of chalcopyrite and molybdenite were obtained at pH = 8, and, for kerosene, these were obtained at pH = 4. The flotation of molybdenite seemed to be less influenced by xanthate than by kerosene, while that of chalcopyrite showed the opposite. The optimum concentration of sodium sulfide for separation was 0.03 mol/L, which rejected 83% chalcopyrite and recovered 82% molybdenite in the single mineral flotation. Pulp potential measurements revealed that the dixanthogen and xanthate were decomposed and desorbed, respectively, from the mineral surface in a reducing environment. The contact angle measurement and adsorption calculation conformed to the flotation response, indicating that few functions of the xanthate and sodium sulfide on the molybdenite flotation were due to their low adsorption densities. The FTIR results further clarified that the xanthate ion was adsorbed on chalcopyrite by forming cuprous xanthate and dixanthogen; however, on molybdenite the adsorption product was only dixanthogen. After conditioning with sodium sulfide, the chalcopyrite surface became clean, but the molybdenite surface still retained slight peaks of dixanthogen. Meanwhile, the possible mechanism was expounded in this research.

  5. Stability of Naturally Relevant Ternary Phases in the Cu–Sn–S system in Contact with an Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Andrea Giaccherini

    2016-07-01

    Full Text Available A relevant research effort is devoted to the synthesis and characterization of phases belonging to the ternary system Cu–Sn–S, mainly for their possible applications in semiconductor technology. Among all ternary phases, kuramite, Cu3SnS4, mohite, Cu2SnS3, and Cu4Sn7S16 have attracted the highest interest. Numerous studies were carried out claiming for the description of new phases in the ternary compositional field. In this study, we revise the existing literature on this ternary system, with a special focus on the phases stable in a temperature range at 25 °C. The only two ternary phases observed in nature are mohite and kuramite. Their occurrence is described as very rare. A numerical modelling of the stable solid phases in contact with a water solution was underwent to define stability relationships of the relevant phases of the system. The numerical modelling of the Eh-pH diagrams was carried out through the phreeqc software with the lnll.dat thermodynamic database. Owing to the complexity of this task, the subsystems Cu–O–H, Sn–O–H, Cu–S–O–H and Sn–S–O–H were firstly considered. The first Pourbaix diagram for the two naturally relevant ternary phases is then proposed.

  6. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  7. Enhanced Light Absorption in Fluorinated Ternary Small-Molecule Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Eastham, Nicholas D. [Department; Dudnik, Alexander S. [Department; Harutyunyan, Boris [Department; Aldrich, Thomas J. [Department; Leonardi, Matthew J. [Department; Manley, Eric F. [Department; Chemical; Butler, Melanie R. [Department; Harschneck, Tobias [Department; Ratner, Mark A. [Department; Chen, Lin X. [Department; Chemical; Bedzyk, Michael J. [Department; Department; Melkonyan, Ferdinand S. [Department; Facchetti, Antonio [Department; Chang, Robert P. H. [Department; Marks, Tobin J. [Department; Department

    2017-06-14

    Using small-molecule donor (SMD) semiconductors in organic photovoltaics (OPVs) has historically afforded lower power conversion efficiencies (PCEs) than their polymeric counterparts. The PCE difference is attributed to shorter conjugated backbones, resulting in reduced intermolecular interactions. Here, a new pair of SMDs is synthesized based on the diketopyrrolopyrrole-benzodithiophene-diketopyrrolopyrrole (BDT-DPP2) skeleton but having fluorinated and fluorinefree aromatic side-chain substituents. Ternary OPVs having varied ratios of the two SMDs with PC61BM as the acceptor exhibit tunable open-circuit voltages (Vocs) between 0.833 and 0.944 V due to a fluorination-induced shift in energy levels and the electronic “alloy” formed from the miscibility of the two SMDs. A 15% increase in PCE is observed at the optimal ternary SMD ratio, with the short-circuit current density (Jsc) significantly increased to 9.18 mA/cm2. The origin of Jsc enhancement is analyzed via charge generation, transport, and diffuse reflectance measurements, and is attributed to increased optical absorption arising from a maximum in film crystallinity at this SMD ratio, observed by grazing incidence wide-angle X-ray scattering.

  8. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  9. High-Efficient Circuits for Ternary Addition

    Directory of Open Access Journals (Sweden)

    Reza Faghih Mirzaee

    2014-01-01

    Full Text Available New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33 μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications.

  10. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  11. Pressure dependence of Raman modes in the chalcopyrite quaternary alloy AgxCu1-xGaS2

    International Nuclear Information System (INIS)

    Choi, In-Hwan; Yu, Peter Y.

    2000-01-01

    Raman scattering in the chalcopyrite quaternary alloy Ag x Cu 1-x GaS 2 has been studied under high pressure (up to 7 GPa) and at low temperature (50 K) using a diamond anvil high pressure cell for alloy concentrations x=1, 0.75, 0.5, 0.25 and 0. This has allowed us to determine the dependence of their zone-center phonon modes on both pressure and alloy concentration. The resultant phonon pressure coefficients are helpful in understanding the nature of the phonon modes in these chalcopyrites

  12. Modelling of chalcopyrite oxidation reactions in the Outokumpu flash smelting process

    Energy Technology Data Exchange (ETDEWEB)

    Ahokainen, T.; Jokilaakso, A. [Helsinki Univ. of Technology, Otaniemi (Finland)

    1996-12-31

    A mathematical model for simulating oxidation reactions of chalcopyrite particles together with momentum, heat and mass transfer between particle and gas phase in a flash smelting furnace reaction shaft is presented. In simulation, the equations governing the gas flow are solved numerically with a commercial fluid flow package, Phoenics. The particle phase is introduced into the gas flow by a Particle Source In Cell (PSIC) - technique, where a number of discrete particles is tracked in a gas flow and the relevant source terms for momentum, mass, and heat transfer are added to the gas phase equations. The gas phase equations used are elliptic in nature and the fluid turbulence is described by the (k-{epsilon}) -model. Thermal gas phase radiation is simulated with a six-flux radiation model. The chemical reactions of concentrate particles are assumed to happen at two sharp interfaces, and a shrinking core model is applied to describe the mass transfer of chemical species through the reaction product layer. In a molten state, the oxygen consumption is controlled by a film penetration concept. The reacting concentrate particles are a mixture of chalcopyrite and silica. Also a certain amount of pure inert silica is fed to the process as flux. In the simulations the calculation domain includes the concentrate burner and a cylindrical reaction shaft of an industrial scale flash smelting furnace. Some examples about the simulations carried out by the combustion model are presented. (author)

  13. Novel integration strategy for enhancing chalcopyrite bioleaching by Acidithiobacillus sp. in a 7-L fermenter.

    Science.gov (United States)

    Feng, Shoushuai; Yang, Hailin; Zhan, Xiao; Wang, Wu

    2014-06-01

    An integrated strategy (additional energy substrate-three stage pH control-fed batch) was firstly proposed for efficiently improving chalcopyrite bioleaching by Acidithiobacillus sp. in a 7-L fermenter. The strain adaptive-growing phase was greatly shortened from 8days into 4days with the supplement of additional 2g/L Fe(2+)+2g/L S(0). Jarosite passivation was effectively weakened basing on higher biomass via the three-stage pH-stat control (pH 1.3-1.0-0.7). The mineral substrate inhibition was attenuated by fed-batch fermentation. With the integrated strategy, the biochemical reaction was promoted and achieved a better balance. Meanwhile, the domination course of A. thiooxidans in the microbial community was shortened from 14days to 8days. As the results of integrated strategy, the final copper ion and productivity reached 89.1mg/L and 2.23mg/(Ld), respectively, which was improved by 52.8% compared to the uncontrolled batch bioleaching. The integrated strategy could be further exploited for industrial chalcopyrite bioleaching. Copyright © 2014 Elsevier Ltd. All rights reserved.

  14. Electrochemical and spectroscopic study of interfacial interactions between chalcopyrite and typical flotation process reagents

    Science.gov (United States)

    Urbano, Gustavo; Lázaro, Isabel; Rodríguez, Israel; Reyes, Juan Luis; Larios, Roxana; Cruz, Roel

    2016-02-01

    Comparative voltammetry and differential double-layer capacitance studies were performed to evaluate interfacial interactions between chalcopyrite (CuFeS2) and n-isopropyl xanthate (X) in the presence of ammonium bisulfite/39wt% SO2 and caustic starch at different pH values. Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy, contact angle measurements, and microflotation tests were used to establish the type and extent of xanthate adsorption as well as the species involved under different mineral surface conditions in this study. The results demonstrate that the species that favor a greater hydrophobicity of chalcopyrite are primarily CuX and S0, whereas oxides and hydroxides of Cu and Fe as well as an excess of starch decrease the hydrophobicity. A conditioning of the mineral surface with ammonium bisulfite/39wt% SO2 at pH 6 promotes the activation of surface and enhances the xanthate adsorption. However, this effect is diminished at pH ≥ 8, when an excess of starch is added during the preconditioning step.

  15. Modelling of chalcopyrite oxidation reactions in the Outokumpu flash smelting process

    Energy Technology Data Exchange (ETDEWEB)

    Ahokainen, T; Jokilaakso, A [Helsinki Univ. of Technology, Otaniemi (Finland)

    1997-12-31

    A mathematical model for simulating oxidation reactions of chalcopyrite particles together with momentum, heat and mass transfer between particle and gas phase in a flash smelting furnace reaction shaft is presented. In simulation, the equations governing the gas flow are solved numerically with a commercial fluid flow package, Phoenics. The particle phase is introduced into the gas flow by a Particle Source In Cell (PSIC) - technique, where a number of discrete particles is tracked in a gas flow and the relevant source terms for momentum, mass, and heat transfer are added to the gas phase equations. The gas phase equations used are elliptic in nature and the fluid turbulence is described by the (k-{epsilon}) -model. Thermal gas phase radiation is simulated with a six-flux radiation model. The chemical reactions of concentrate particles are assumed to happen at two sharp interfaces, and a shrinking core model is applied to describe the mass transfer of chemical species through the reaction product layer. In a molten state, the oxygen consumption is controlled by a film penetration concept. The reacting concentrate particles are a mixture of chalcopyrite and silica. Also a certain amount of pure inert silica is fed to the process as flux. In the simulations the calculation domain includes the concentrate burner and a cylindrical reaction shaft of an industrial scale flash smelting furnace. Some examples about the simulations carried out by the combustion model are presented. (author)

  16. Thermophilic archaeal community succession and function change associated with the leaching rate in bioleaching of chalcopyrite.

    Science.gov (United States)

    Zhu, Wei; Xia, Jin-lan; Yang, Yi; Nie, Zhen-yuan; Peng, An-an; Liu, Hong-chang; Qiu, Guan-zhou

    2013-04-01

    The community succession and function change of thermophilic archaea Acidianus brierleyi, Metallosphaera sedula, Acidianus manzaensis and Sulfolobus metallicus were studied by denaturing gradient gel electrophoresis (DGGE) analysis of amplifying 16S rRNA genes fragments and real-time qPCR analysis of amplifying sulfur-oxidizing soxB gene associated with chalcopyrite bioleaching rate at different temperatures and initial pH values. The analysis results of the community succession indicated that temperature and initial pH value had a significant effect on the consortium, and S. metallicus was most sensitive to the environmental change, A. brierleyi showed the best adaptability and sulfur oxidation ability and predominated in various leaching systems. Meanwhile, the leaching rate of chalcopyrite closely related to the consortium function embodied by soxB gene, which could prove a desirable way for revealing microbial sulfur oxidation difference and tracking the function change of the consortium, and for optimizing the leaching parameters and improving the recovery of valuable metals. Copyright © 2013 Elsevier Ltd. All rights reserved.

  17. Selective Excitation of Window and Buffer Layers in Chalcopyrite Devices and Modules

    Energy Technology Data Exchange (ETDEWEB)

    Glynn, Stephen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Repins, Ingrid L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Burst, James M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Beall, Carolyn L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bowers, Karen A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Mansfield, Lorelle M [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2018-02-02

    Window and buffer layers in chalcopyrite devices are well known to affect junctions, conduction, and photo-absorption properties of the device. Some of these layers, particularly 'buffers,' which are deposited directly on top of the absorber, exhibit metastable effects upon exposure to light. Thus, to understand device performance and/or metastability, it is sometimes desirable to selectively excite different layers in the device stack. Absorption characteristics of various window and buffer layers used in chalcopyrite devices are measured. These characteristics are compared with emission spectra of common and available light sources that might be used to optically excite such layers. Effects of the window and buffer absorption on device quantum efficiency and metastability are discussed. For the case of bath-deposited Zn(O,S) buffers, we conclude that this layer is not optically excited in research devices or modules. This provides a complimentary mechanism to the chemical differences that may cause long time constants (compared to devices with CdS buffers) associated with reaching a stable 'light-soaked' state.

  18. Presentation on mechanisms and applications of chalcopyrite and pyrite bioleaching in biohydrometallurgy - a presentation.

    Science.gov (United States)

    Tao, Huang; Dongwei, Li

    2014-12-01

    This review outlines classic and current research, scientific documents and research achievements in bioleaching, particularly in respect of the bioleaching of chalcopyrite and pyrite. The diversity and commonality of the microbial leaching process can be easily studied through comparing the bioleaching mechanism and the application of these two metal sulfides. The crystal, electronic and surface structures of chalcopyrite and pyrite are summarized in detail in this paper. It determines the specific and complicated interaction pathways, kinetics of the atmospheric/aqueous oxidation, and the control process of bioleaching of the minerals as the precondition. Bioleaching of metal sulfides is performed by a diverse group of microorganisms and microbial communities. The species of the bacteria which have a significant effect on leaching ores are miraculously diverse. The newly identified acidophilic microorganisms with unique characteristics for efficient bioleaching of sulfidic minerals are increasing sharply. The cell-to-cell communication mechanisms, which are still implicit, elusive and intangible at present day, have gradually become a research hotspot. The different mineralogy characteristics and the acid solubility of the metal sulfides (e.g., chalcopyrite and pyrite) cause two different dissolution pathways, the thiosulfate and the polysulfide pathways. The bioleaching mechanisms are categorized by contact (an electrostatic attachment) and noncontact (planktonic) process, with emphasis on the produce of extracellular polymeric substances and formation of biofilm on the surface of the metal sulfides in this paper. The division of the direct and indirect effect are not adopted due to the redox chain, the reduction of the ferric iron and oxidation of the ferrous iron. The molecular oxygen is reduced by the electrons extracted from the specific metal sulfide, via a redox chain forming a supercomplex spanning the periplasmic space and connecting both outer and inner

  19. Description of the ternary system Cu-Ge-Te

    International Nuclear Information System (INIS)

    Dogguy, M.; Carcaly, C.; Rivet, J.; Flahaut, J.

    1977-01-01

    The Cu-Ge-Te ternary system has been studied by DTA and by crystallographic and metallographic analysis. The existence of a ternary compound Cu 2 GeTe 3 is demonstrated; this compound has a ternary incongruent melting point at 500 0 C. This ternary compound has a superstructure of a zinc blende type. The study shows the existence of five ternary eutectics. Two liquid-liquid miscibility gaps exist: the first is situated entirely in the ternary system; the second gives a monotectic region within the ternary system. (Auth.)

  20. All-optical symmetric ternary logic gate

    Science.gov (United States)

    Chattopadhyay, Tanay

    2010-09-01

    Symmetric ternary number (radix=3) has three logical states (1¯, 0, 1). It is very much useful in carry free arithmetical operation. Beside this, the logical operation using this type of number system is also effective in high speed computation and communication in multi-valued logic. In this literature all-optical circuits for three basic symmetrical ternary logical operations (inversion, MIN and MAX) are proposed and described. Numerical simulation verifies the theoretical model. In this present scheme the different ternary logical states are represented by different polarized state of light. Terahertz optical asymmetric demultiplexer (TOAD) based interferometric switch has been used categorically in this manuscript.

  1. Performance Estimation for Lowpass Ternary Filters

    Directory of Open Access Journals (Sweden)

    Brenton Steele

    2003-11-01

    Full Text Available Ternary filters have tap values limited to −1, 0, or +1. This restriction in tap values greatly simplifies the multipliers required by the filter, making ternary filters very well suited to hardware implementations. Because they incorporate coarse quantisation, their performance is typically limited by tap quantisation error. This paper derives formulae for estimating the achievable performance of lowpass ternary filters, thereby allowing the number of computationally intensive design iterations to be reduced. Motivated by practical communications systems requirements, the performance measure which is used is the worst-case stopband attenuation.

  2. Semiconductor laser shearing interferometer

    International Nuclear Information System (INIS)

    Ming Hai; Li Ming; Chen Nong; Xie Jiaping

    1988-03-01

    The application of semiconductor laser on grating shearing interferometry is studied experimentally in the present paper. The method measuring the coherence of semiconductor laser beam by ion etching double frequency grating is proposed. The experimental result of lens aberration with semiconductor laser shearing interferometer is given. Talbot shearing interferometry of semiconductor laser is also described. (author). 2 refs, 9 figs

  3. Sulfobacillus thermosulfidooxidans strain Cutipay enhances chalcopyrite bioleaching under moderate thermophilic conditions in the presence of chloride ion.

    Science.gov (United States)

    Bobadilla-Fazzini, Roberto A; Cortés, Maria Paz; Maass, Alejandro; Parada, Pilar

    2014-12-01

    Currently more than 90% of the world's copper is obtained through sulfide mineral processing. Among the copper sulfides, chalcopyrite is the most abundant and therefore economically relevant. However, primary copper sulfide bioleaching is restricted due to high ionic strength raffinate solutions and particularly chloride coming from the dissolution of ores. In this work we describe the chalcopyrite bioleaching capacity of Sulfobacillus thermosulfidooxidans strain Cutipay (DSM 27601) previously described at the genomic level (Travisany et al. (2012) Draft genome sequence of the Sulfobacillus thermosulfidooxidans Cutipay strain, an indigenous bacterium isolated from a naturally extreme mining environment in Northern Chile. J Bacteriol 194:6327-6328). Bioleaching assays with the mixotrophic strain Cutipay showed a strong increase in copper recovery from chalcopyrite concentrate at 50°C in the presence of chloride ion, a relevant inhibitory element present in copper bioleaching processes. Compared to the abiotic control and a test with Sulfobacillus acidophilus DSM 10332, strain Cutipay showed an increase of 42 and 69% in copper recovery, respectively, demonstrating its high potential for chalcopyrite bioleaching. Moreover, a genomic comparison highlights the presence of the 2-Haloacid dehalogenase predicted-protein related to a potential new mechanism of chloride resistance in acidophiles. This novel and industrially applicable strain is under patent application CL 2013-03335.

  4. Examples of neutron diffraction texture analysis on one and the same chalcopyrite sample before and after experimental deformation

    International Nuclear Information System (INIS)

    Jansen, E.M.; Brokmeier, H.G.; Siemes, H.

    1994-01-01

    Natural chalcopyrite specimens from Mt. Isa, Australia were investigated by neutron diffraction texture analysis. The preferred orientation of the specimens consists of 3 main orientation components. After axial shortening at a temperature of 25 C the initial orientation components became weaker, a new component was detected. (orig.)

  5. Ternary networks reliability and Monte Carlo

    CERN Document Server

    Gertsbakh, Ilya; Vaisman, Radislav

    2014-01-01

    Ternary means “based on three”. This book deals with reliability investigations of  networks whose components subject to failures can be in three states –up, down and middle (mid), contrary to traditionally considered networks  having only binary (up/down) components. Extending binary case to ternary allows to consider more realistic and flexible models for communication, flow and supply networks.

  6. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Directory of Open Access Journals (Sweden)

    Wang Lan

    2016-01-01

    Full Text Available We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  7. Saline-water bioleaching of chalcopyrite with thermophilic, iron(II)- and sulfur-oxidizing microorganisms.

    Science.gov (United States)

    Watling, Helen R; Collinson, David M; Corbett, Melissa K; Shiers, Denis W; Kaksonen, Anna H; Watkin, Elizabeth L J

    2016-09-01

    The application of thermoacidophiles for chalcopyrite (CuFeS2) bioleaching in hot, acidic, saline solution was investigated as a possible process route for rapid Cu extraction. The study comprised a discussion of protective mechanisms employed for the survival and/or adaptation of thermoacidophiles to osmotic stress, a compilation of chloride tolerances for three genera of thermoacidophiles applied in bioleaching and an experimental study of the activities of three species in a saline bioleaching system. The data showed that the oxidation rates of iron(II) and reduced inorganic sulfur compounds (tetrathionate) were reduced in the presence of chloride levels well below chloride concentrations in seawater, limiting the applicability of these microorganisms in the bioleaching of CuFeS2 in saline water. Copyright © 2016. Published by Elsevier Masson SAS.

  8. Bacterial consortium for copper extraction from sulphide ore consisting mainly of chalcopyrite

    Directory of Open Access Journals (Sweden)

    E. Romo

    2013-01-01

    Full Text Available The mining industry is looking forward for bacterial consortia for economic extraction of copper from low-grade ores. The main objective was to determine an optimal bacterial consortium from several bacterial strains to obtain copper from the leach of chalcopyrite. The major native bacterial species involved in the bioleaching of sulphide ore (Acidithiobacillus ferrooxidans, Acidithiobacillus thiooxidans, Leptospirillum ferrooxidans and Leptospirillum ferriphilum were isolated and the assays were performed with individual bacteria and in combination with At. thiooxidans. In conclusion, it was found that the consortium integrated by At. ferrooxidans and At. thiooxidans removed 70% of copper in 35 days from the selected ore, showing significant differences with the other consortia, which removed only 35% of copper in 35 days. To validate the assays was done an escalation in columns, where the bacterial consortium achieved a higher percentage of copper extraction regarding to control.

  9. Simulation of Bioleaching Heat Effects for Enhancement of Copper Recovery from Sarcheshmeh Chalcopyrite

    Science.gov (United States)

    Mahmoudian, Ali Reza; Sadrnezhaad, S. K.; Manafi, Zahra

    2014-08-01

    A heat-transfer model was formulated to determine the distribution of temperature within a bioheap of chalcopyrite of Sarcheshmeh copper mine. Bioleaching employs mixed mesophilic and thermophilic microbes for Cu extraction. Thermophiles are better than mesophiles to dissolve CuFeS2. The solution irrigation and aeration rates were taken into account as the main operational factors. The model was validated by comparing the temperature profiles of test columns with those of bioheap. The model was used to find the optimal ratio of irrigation to aeration. It was found that when the solution was fed at a flow rate of 5 kg/m2 h and air was blown at a flow rate of 7.5 kg/m2 h, the transition from a mesophilic to thermophilic state inside the heap was possible. In this situation, the maximum temperature rise inside the heap was about 332 K (59 °C) after 60 days.

  10. Solution-processed In2S3 buffer layer for chalcopyrite thin film solar cells

    Science.gov (United States)

    Wang, Lan; Lin, Xianzhong; Ennaoui, Ahmed; Wolf, Christian; Lux-Steiner, Martha Ch.; Klenk, Reiner

    2016-02-01

    We report a route to deposit In2S3 thin films from air-stable, low-cost molecular precursor inks for Cd-free buffer layers in chalcopyrite-based thin film solar cells. Different precursor compositions and processing conditions were studied to define a reproducible and robust process. By adjusting the ink properties, this method can be applied in different printing and coating techniques. Here we report on two techniques, namely spin-coating and inkjet printing. Active area efficiencies of 12.8% and 12.2% have been achieved for In2S3-buffered solar cells respectively, matching the performance of CdS-buffered cells prepared with the same batch of absorbers.

  11. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  12. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  13. Special quasirandom structures for binary/ternary group IV random alloys

    KAUST Repository

    Chroneos, Alexander I.

    2010-06-01

    Simulation of defect interactions in binary/ternary group IV semiconductor alloys at the density functional theory level is difficult due to the random distribution of the constituent atoms. The special quasirandom structures approach is a computationally efficient way to describe the random nature. We systematically study the efficacy of the methodology and generate a number of special quasirandom cells for future use. In order to demonstrate the applicability of the technique, the electronic structures of E centers in Si1-xGex and Si1-x -yGexSny alloys are discussed for a range of nearest neighbor environments. © 2010 Elsevier B.V. All rights reserved.

  14. Assessment of the flotability of chalcopyrite, molybdenite and pyrite using biosolids and their main components as collectors for greening the froth flotation of copper sulphide ores.

    OpenAIRE

    Sobarzo, Francisco; Herrera Urbina, Ronaldo; Higueras Higueras, Pablo Leon; Sáez Navarrete, César; Godoy Faúndez, Alex; Reyes Bozo, Lorenzo; Vásquez Bestagno, Jorge

    2014-01-01

    Biosolids and representative compounds of their main components ? humic acids, sugars, and proteins ? have been tested as possible environment-friendly collectors and frothers for the flotation of copper sulphide ores. The floatability of chalcopyrite and molybdenite ? both valuable sulphide minerals present in these ores ? as well as non-valuable pyrite was assessed through Hallimond tube flotation tests. Humic acids exhibit similar collector ability for chalcopyrite and molybdenite as that ...

  15. Solid spectroscopy: semiconductors

    International Nuclear Information System (INIS)

    Silva, C.E.T.G. da

    1983-01-01

    Photoemission as technique of study of the semiconductor electronic structure is shortly discussed. Homogeneous and heterogeneous semiconductors, where volume and surface electronic structure, core levels and O and H chemisorption in GaAs, Schottky barrier are treated, respectively. Amorphous semiconductors are also discussed. (L.C.) [pt

  16. Influence of temperature on the fixation and penetration of silver during the chalcopyrite leaching using moderate thermophilic microorganisms

    International Nuclear Information System (INIS)

    Cancho, L.; Blazquez, M. L.; Munoz, J. A.; Gonzalez, F.; Ballester, A.

    2004-01-01

    Bio leaching of chalcopyrite using mesophilic microorganisms considerable improves in the presence of silver. However, the studies carried out with moderate thermophilic microorganisms do not show a significant improvement with regard to the use of mesophilic bacteria. The main objective of the present work has been to study the silver fixation on chalcopyrite ar 35 and 45 degree centigree and its influence on the microbiological attack. Different observations using SEM, EDS microanalysis and concentration profiles using electron microprobe have been carried out. The study of the different samples showed that silver fixation was more favourable at 35 degree centigree than at 45 degree centigree. In addition, bacterial action improved silver penetration through attack cracks. (Author)

  17. Community dynamics of attached and free cells and the effects of attached cells on chalcopyrite bioleaching by Acidithiobacillus sp.

    Science.gov (United States)

    Yang, Hailin; Feng, Shoushuai; Xin, Yu; Wang, Wu

    2014-02-01

    The community dynamics of attached and free cells of Acidithiobacillus sp. were investigated and compared during chalcopyrite bioleaching process. In the mixed strains system, Acidithiobacillus ferrooxidans was the dominant species at the early stage while Acidithiobacillus thiooxidans owned competitive advantage from the middle stage to the end of bioprocess. Meanwhile, compared to A. ferrooxidans, more significant effects of attached cells on free biomass with A. thiooxidans were shown in either the pure or mixed strains systems. Moreover, the effects of attached cells on key chemical parameters were also studied in different adsorption-deficient systems. Consistently, the greatest reduction of key chemical ion was shown with A. thiooxidans and the loss of bioleaching efficiency was high to 50.5%. These results all demonstrated the bioleaching function of attached cells was more efficient than the free cells, especially with A. thiooxidans. These notable results would help us to further understand the chalcopyrite bioleaching. Copyright © 2013 Elsevier Ltd. All rights reserved.

  18. Effect of pH values on the extracellular polysaccharide secreted by Acidithiobacillus ferrooxidans during chalcopyrite bioleaching

    Science.gov (United States)

    Yu, Run-lan; Liu, Jing; Tan, Jian-xi; Zeng, Wei-min; Shi, Li-juan; Gu, Guo-hua; Qin, Wen-qing; Qiu, Guan-zhou

    2014-04-01

    The pH value plays an important role in the bioleaching of sulphide minerals. The effect of pH values on the extracellular polysaccharide secreted by Acidithiobacillus ferrooxidans was investigated in different phases of bacterial growth during chalcopyrite bioleaching. It is found that extracellular polysaccharide secretion from the cells attached to chalcopyrite is more efficiently than that of the free cells in the bioleaching solution. Three factors, pH values, the concentration of soluble metal ions, and the bacterial growth and metabolism, affect extracellular polysaccharide secretion in the free cells, and are related to the bacterial growth phase. Extracellular polysaccharide secretion from the attached cells is mainly dependent on the pH value of the bacterial culture.

  19. The Influencing Mechanisms of Sodium Hexametaphosphate on Chalcopyrite Flotation in the Presence of MgCl2 and CaCl2

    Directory of Open Access Journals (Sweden)

    Wanqing Li

    2018-04-01

    Full Text Available Sea water has been used in flotation plants, showing a promising way to save fresh water usage. Previous studies indicated that divalent salts in sea water played negative roles in chalcopyrite flotation, but not much work have been conducted to understand the eliminating mechanisms. This study systematically investigated the effects of divalent cations of Ca2+ and Mg2+ on natural flotability of chalcopyrite in the absence of collectors and frothers. The reduced recovery was mainly due to the adsorption of Mg and Ca hydroxyl complexes and precipitation on chalcopyrite surfaces, giving rise to a less hydrophobic surface. The addition of sodium hexametaphosphate (SHMP, however, significantly improved chalcopyrite recovery. Species calculation, contact angle, zeta potential, FTIR and XPS analyses were conducted to understand the influencing mechanisms of divalent ions and the beneficial effects of SHMP on chalcopyrite recovery. The primary mechanism was that SHMP prevented the adsorption of positively charged Mg and Ca compounds or precipitation with hydrophilic properties such as Mg(OH2 on chalcopyrite surfaces, confirmed by the Derjguin-Landau-Verwey-Overbeek (DLVO theory. Secondly, SHMP reacted with Mg2+ and Ca2+ to form dissolvable complexes, thereby declining the formation of insoluble Mg2+ and Ca2+ compounds or precipitation.

  20. Crystallization features of ternary reversible reciprocal systems

    International Nuclear Information System (INIS)

    Tomashik, V.N.; Shcherbak, L.P.; Fejchuk, P.I.; Grytsiv, V.I.

    2006-01-01

    Some features of the primary crystallization of phases in ternary reversible reciprocal system are considered and discussed. The diagonal join CdTe-GeSe of the CdTe + GeSe = CdSe + GeTe ternary reciprocal system is studied to show that the features in primary and secondary heating and cooling curves in such systems under fully equilibrium conditions are not reproduced upon consecutive heating and cooling sessions, because of the existence of different amounts of the reagents and the reaction products in the mixture; the temperatures of each transformation lie in a range. Those who experimentally investigate other ternary and more complex reversible reciprocal systems should take this fact into account [ru

  1. The ternary system nickel-boron-silicon

    International Nuclear Information System (INIS)

    Lugscheider, E.; Reimann, H.; Knotek, O.

    1975-01-01

    The ternary system Nickel-Boron-Silicon was established at 850 0 C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiBsub(4-x) with x approximately 0.7 and SiB 6 were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for Ni 6 Si 2 B, the phase Nisub(4,6)Si 2 B published by Uraz and Rundqvist can better be described by the formula Nisub(4.29)Si 2 Bsub(1.43). In relation to further investigations we measured melting temperatures in ternary Ni-10 B-Si alloys by differential thermoanalysis. (author)

  2. Ternary fission induced by polarized neutrons

    Directory of Open Access Journals (Sweden)

    Gönnenwein Friedrich

    2013-12-01

    Full Text Available Ternary fission of (e,e U- and Pu- isotopes induced by cold polarized neutrons discloses some new facets of the process. In the so-called ROT effect shifts in the angular distributions of ternary particles relative to the fission fragments show up. In the so-called TRI effect an asymmetry in the emission of ternary particles relative to a plane formed by the fragment momentum and the spin of the neutron appear. The two effects are shown to be linked to the components of angular momentum perpendicular and parallel to the fission axis at the saddle point of fission. Based on theoretical models the spectroscopic properties of the collective transitional states at the saddle point are inferred from experiment.

  3. Insights to the effects of free cells on community structure of attached cells and chalcopyrite bioleaching during different stages.

    Science.gov (United States)

    Feng, Shoushuai; Yang, Hailin; Wang, Wu

    2016-01-01

    The effects of free cells on community structure of attached cells and chalcopyrite bioleaching by Acidithiobacillus sp. during different stages were investigated. The attached cells of Acidithiobacillus thiooxidans owned the community advantage from 14thd to the end of bioprocess in the normal system. The community structure of attached cells was greatly influenced in the free cells-deficient systems. Compared to A. thiooxidans, the attached cells community of Acidithiobacillus ferrooxidans had a higher dependence on its free cells. Meanwhile, the analysis of key biochemical parameters revealed that the effects of free cells on chalcopyrite bioleaching in different stages were diverse, ranging from 32.8% to 64.3%. The bioleaching contribution of free cells of A. ferrooxidans in the stationary stage (8-14thd) was higher than those of A. thiooxidans, while the situation was gradually reversed in the jarosite passivation inhibited stage (26-40thd). These results may be useful in guiding chalcopyrite bioleaching. Copyright © 2015 Elsevier Ltd. All rights reserved.

  4. Effects of pyrite and sphalerite on population compositions, dynamics and copper extraction efficiency in chalcopyrite bioleaching process.

    Science.gov (United States)

    Xiao, Yunhua; Liu, Xueduan; Dong, Weiling; Liang, Yili; Niu, Jiaojiao; Gu, Yabing; Ma, Liyuan; Hao, Xiaodong; Zhang, Xian; Xu, Zhen; Yin, Huaqun

    2017-07-01

    This study used an artificial microbial community with four known moderately thermophilic acidophiles (three bacteria including Acidithiobacillus caldus S1, Sulfobacillus thermosulfidooxidans ST and Leptospirillum ferriphilum YSK, and one archaea, Ferroplasma thermophilum L1) to explore the variation of microbial community structure, composition, dynamics and function (e.g., copper extraction efficiency) in chalcopyrite bioleaching (C) systems with additions of pyrite (CP) or sphalerite (CS). The community compositions and dynamics in the solution and on the ore surface were investigated by real-time quantitative PCR (qPCR). The results showed that the addition of pyrite or sphalerite changed the microbial community composition and dynamics dramatically during the chalcopyrite bioleaching process. For example, A. caldus (above 60%) was the dominant species at the initial stage in three groups, and at the middle stage, still dominated C group (above 70%), but it was replaced by L. ferriphilum (above 60%) in CP and CS groups; at the final stage, L. ferriphilum dominated C group, while F. thermophilum dominated CP group on the ore surface. Furthermore, the additions of pyrite or sphalerite both made the increase of redox potential (ORP) and the concentrations of Fe 3+ and H + , which would affect the microbial community compositions and copper extraction efficiency. Additionally, pyrite could enhance copper extraction efficiency (e.g., improving around 13.2% on day 6) during chalcopyrite bioleaching; on the contrary, sphalerite restrained it.

  5. Surface characterization by X-ray photoelectron spectroscopy and cyclic voltammetry of products formed during the potentiostatic reduction of chalcopyrite

    International Nuclear Information System (INIS)

    Nava, Dora; Gonzalez, Ignacio; Leinen, Dietmar; Ramos-Barrado, Jose R.

    2008-01-01

    Surface characterization of the transient products that precede chalcocite formation during chalcopyrite reduction was carried out. The experimental strategy employed in the present work consisted of the application of different potential pulses (fixed energetic conditions) on the surface of chalcopyrite electrodes in 1.7 M H 2 SO 4 . The chemical products formed at different potential pulses were characterized by cyclic voltammetry (CV) and XPS. Each electrogenerated species presented a specific voltammetric behavior and an XPS spectrum, in which the values of principal photoelectronic peak bond energies for Cu 2p 3/2 , Fe 2p 3/2 and S 2p 3/2 and the atomic concentrations were considered. Several potential intervals could be identified: in 0.115 ≥ E cat ≥ -0.085 V vs. SHE, an intermediate copper sulfide is formed whose composition is between those of chalcopyrite and bornite, such as talnakhite. The reduction of this product occurs slowly, giving bornite at potentials less than -0.085 V. In the applied potential region -0.085 ≥ E cat > -0.185 V, the bornite gradually decomposes causing the incomplete conversion to chalcocite. In the potential interval -0.185 > E cat ≥ -0.285 V, energetic conditions are large enough to allow the immediate decomposition of bornite, forming chalcocite in a more quantitative manner

  6. True ternary fission of 252Cf

    International Nuclear Information System (INIS)

    Vijayaraghavan, K.R.; Balasubramaniam, M.; Oertzen, W. von

    2014-01-01

    Splitting of heavy radioactive nucleus into three fragments is known as ternary fission. If the size of the fragments are almost equal it is referred to as true ternary fission. Recently, Yu. V. Pyatkov et al observed/reported the experimental observation of true ternary fission in 252 Cf. In this work, the possibilities of different true ternary fission modes of 252 Cf through potential energy surface (PES) calculations based on three cluster model (TCM) are discussed. In TCM a condition on the mass numbers of the fission fragments is implied as A 1 ≥ A 2 ≥ A 3 in order to avoid repetition of combinations. Due to this condition, the values of Z 3 vary from 0 to 36 and Z 2 vary from 16 to 51. Of the different pairs having similar (Z 2 , Z 3 ) with different potential energy, a pair possessing minimum potential energy is chosen. Thus identified favourable combinations are plotted. For the PES calculations the arrangement of the fragments is considered in the order of A 1 +A 2 +A 3 . i.e. the heavy and the lightest fragments are kept at the ends. It is seen that the deepest minimum in the PES occurs for Z 3 =2 labelled as (Z 2 ; 2) indicating He accompanied breakup as the most favourable one. Of which, the breakup with Z 2 around 46 to 48 is the least (shown by dashed (Z 1 = 50) and dotted (Z 1 = 52) lines indicating a constant Z 1 value). The other notable minima in the PES are labelled and they correspond to the (Z 2 , Z 3 ) pairs viz., (20, 20), (28, 20), (28, 28) and (32, 32). Of these four minima, the first three are associated with the magic numbers 20 and 28. For Z 3 =20, there are two minimums at (20,20) and (28,20) among them (28,20) is the lowest minimum through which the minimum-path passes, and it is the ternary decay observed by Yu. V. Pyatkov et al. The fourth minima is the most interesting due to the fact that it corresponds to true ternary fission mode with Z 2 =32, Z 3 =32 and Z 1 =34. The minimum potential energy path also goes through this true

  7. A Josephson ternary associative memory cell

    International Nuclear Information System (INIS)

    Morisue, M.; Suzuki, K.

    1989-01-01

    This paper describes a three-valued content addressable memory cell using a Josephson complementary ternary logic circuit named as JCTL. The memory cell proposed here can perform three operations of searching, writing and reading in ternary logic system. The principle of the memory circuit is illustrated in detail by using the threshold-characteristics of the JCTL. In order to investigate how a high performance operation can be achieved, computer simulations have been made. Simulation results show that the cycle time of memory operation is 120psec, power consumption is about 0.5 μW/cell and tolerances of writing and reading operation are +-15% and +-24%, respectively

  8. The community dynamics of major bioleaching microorganisms during chalcopyrite leaching under the effect of organics.

    Science.gov (United States)

    Li, Qihou; Tian, Ye; Fu, Xian; Yin, Huaqun; Zhou, Zhijun; Liang, Yiting; Qiu, Guanzhou; Liu, Jie; Liu, Hongwei; Liang, Yili; Shen, Li; Cong, Jing; Liu, Xueduan

    2011-08-01

    To determine the effect of organics (yeast extract) on microbial community during chalcopyrite bioleaching at different temperature, real-time polymerase chain reaction (PCR) was employed to analyze community dynamics of major bacteria applied in bioleaching. The results showed that yeast extract exerted great impact on microbial community, and therefore influencing bioleaching rate. To be specific, yeast extract was adverse to this bioleaching process at 30°C due to decreased proportion of important chemolithotrophs such as Acidithiobacillus ferrooxidans and Acidithiobacillus thiooxidans. However, yeast extract could promote bioleaching rate at 40°C on account of the increased number and enhanced work of Ferroplasma thermophilum, a kind of facultative bacteria. Similarly, bioleaching rate was enhanced under the effect of yeast extract at 50°C owing to the work of Acidianus brierleyi. At 60°C, bioleaching rate was close to 100% and temperature was the dominant factor determining bioleaching rate. Interestingly, the existence of yeast extract greatly enhanced the relative competitiveness of Ferroplasma thermophilum in this complex bioleaching microbial community.

  9. Acidithiobacillus thiooxidans secretome containing a newly described lipoprotein Licanantase enhances chalcopyrite bioleaching rate

    Science.gov (United States)

    Bobadilla Fazzini, Roberto A.; Levican, Gloria

    2010-01-01

    The nature of the mineral–bacteria interphase where electron and mass transfer processes occur is a key element of the bioleaching processes of sulfide minerals. This interphase is composed of proteins, metabolites, and other compounds embedded in extracellular polymeric substances mainly consisting of sugars and lipids (Gehrke et al., Appl Environ Microbiol 64(7):2743–2747, 1998). On this respect, despite Acidithiobacilli—a ubiquitous bacterial genera in bioleaching processes (Rawlings, Microb Cell Fact 4(1):13, 2005)—has long been recognized as secreting bacteria (Jones and Starkey, J Bacteriol 82:788–789, 1961; Schaeffer and Umbreit, J Bacteriol 85:492–493, 1963), few studies have been carried out in order to clarify the nature and the role of the secreted protein component: the secretome. This work characterizes for the first time the sulfur (meta)secretome of Acidithiobacillus thiooxidans strain DSM 17318 in pure and mixed cultures with Acidithiobacillus ferrooxidans DSM 16786, identifying the major component of these secreted fractions as a single lipoprotein named here as Licanantase. Bioleaching assays with the addition of Licanantase-enriched concentrated secretome fractions show that this newly found lipoprotein as an active protein additive exerts an increasing effect on chalcopyrite bioleaching rate. Electronic supplementary material The online version of this article (doi:10.1007/s00253-010-3063-8) contains supplementary material, which is available to authorized users. PMID:21191788

  10. Dissolution characteristics of sericite in chalcopyrite bioleaching and its effect on copper extraction

    Science.gov (United States)

    Dong, Ying-bo; Li, Hao; Lin, Hai; Zhang, Yuan

    2017-04-01

    The effects of sericite particle size, rotation speed, and leaching temperature on sericite dissolution and copper extraction in a chalcopyrite bioleaching system were examined. Finer particles, appropriate temperature and rotation speed for Acidithiobacillus ferrooxidans resulted in a higher Al3+ dissolution concentration. The Al3+ dissolution concentration reached its highest concentration of 38.66 mg/L after 48-d leaching when the sericite particle size, temperature, and rotation speed were -43 μm, 30°C, and 160 r/min, respectively. Meanwhile, the sericite particle size, rotation speed, and temperature can affect copper extraction. The copper extraction rate is higher when the sericite particle size is finer. An appropriately high temperature is favorable for copper leaching. The dissolution of sericite fitted the shrinking core model, 1-(2/3) α-(1- α)2/3 = k 1 t, which indicates that internal diffusion is the decision step controlling the overall reaction rate in the leaching process. Scanning electron microscopy analysis showed small precipitates covered on the surface of sericite after leaching, which increased the diffusion resistance of the leaching solution and dissolved ions.

  11. Development of a composite collector scheme for flotation of chalcopyrite ore

    International Nuclear Information System (INIS)

    Khan, M.M.; Ahmad, I.

    2005-01-01

    Xanthate-type collectors reported for the upgradation of Chalcopyrite ore of North Waziristan area were studied and a new technique was developed, in which -two collectors were used (composite collectors) in the bulk-stage process of froth-flotation to achieve metallurgical grade with maximum recovery. The collectors studied were thiol-type surfactants, such as sodium ethyl xanthate (NaEX), sodium propyl xanthate (NaPX), sodium butyl xanthate (NaBX) and sodium Amyl xanthate (NaAX). Mixed collectors examined were in the varying dosage ratio of (0-100:100-0) through the combination of(i) sodium ethyl xanthate with sodium propyl xanthate, sodium ethyl xanthate with sodium butyl xanthate, sodium ethyl xanthate with sodium amyl xanthate, (ii) sodium propyl xanthate with sodium butyl xanthate, sodium propyl xanthate with sodium amyl xanthate and (iii) sodium butyl xanthate with sodium amyl xanthate. All the remaining flotation parameters were kept constant during the various flotation tests. The results were compared and the conclusions were drawn that the optimum grade in the concentrate was obtained with a mixture having a ratio of 4: 1 with sodium ethyl xanthate and sodium butyl xanthate. Recovery of copper content in the concentrate was achieved with ratio of 2:3 with sodium butyl xanthate and sodium amyl xanthate. (author)

  12. Structural, electronic, linear, and nonlinear optical properties of ZnCdTe{sub 2} chalcopyrite

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, Tarik [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P. 230, Tlemcen 13000 (Algeria); Reshak, Ali H. [Institute of Physical Biology, South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Microelectronic Engineering, University of Malaysia Perlis (UniMAP), Block A, Kompleks Pusat Pengajian, 02600 Arau Jejawi, Perlis (Malaysia); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Baltache, H.; Amrani, B. [Laboratoire de Physique Quantique et de Modelisation Mathematique, Universite de Mascara, Mascara 29000 (Algeria); Bouhemadou, A. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Faculty of Sciences, Department of Physics, University of Setif, Setif 19000 (Algeria)

    2011-03-15

    We report results of first-principles density functional calculations using the full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) and the Engel-Vosko-GGA (EV-GGA) formalism were used for the exchange-correlation energy to calculate the structural, electronic, linear, and nonlinear optical properties of the chalcopyrite ZnCdTe{sub 2} compound. The valence band maximum and the conduction band minimum are located at the {gamma}-point, resulting in a direct band gap of about 0.71 eV for GGA and 1.29 eV for EV-GGA. The results of bulk properties, such as lattice parameters (a, c, and u), bulk modulus B, and its pressure derivative B' are evaluated. The optical properties of this compound, namely the real and the imaginary parts of the dielectric function, reflectivity, and refractive index, show a considerable anisotropy as a consequence ZnCdTe{sub 2} posseses a strong birefringence. In addition, the extinction coefficient, the electron energy loss function, and the nonlinear susceptibility are calculated and their spectra are analyzed. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. An optimized In–CuGa metallic precursors for chalcopyrite thin films

    Energy Technology Data Exchange (ETDEWEB)

    Han, Jun-feng, E-mail: junfeng.han@cnrs-imn.fr [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France); Department of Physics, Peking University, Beijing 100871 (China); Liao, Cheng [Department of Physics, Peking University, Beijing 100871 (China); Chengdu Green Energy and Green Manufacturing Technology R and D Center, Chengdu, Sichuan Province 601207 (China); Jiang, Tao; Xie, Hua-mu; Zhao, Kui [Department of Physics, Peking University, Beijing 100871 (China); Besland, M.-P. [Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, UMR CNRS 6502, 2 rue de la Houssinière, BP 32229, 44322 Nantes Cedex 3 (France)

    2013-10-31

    We report a study of CuGa–In metallic precursors for chalcopyrite thin film. CuGa and In thin films were prepared by DC sputtering at room temperature. Due to low melting point of indium, the sputtering power on indium target was optimized. Then, CuGa and In multilayers were annealed at low temperature. At 120 °C, the annealing treatment could enhance diffusion and alloying of CuGa and In layers; however, at 160 °C, it caused a cohesion and crystalline of indium from the alloy which consequently formed irregular nodules on the film surface. The precursors were selenized to form copper indium gallium selenide (CIGS) thin films. The morphological and structural properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectra. The relationships between metallic precursors and CIGS films were discussed in the paper. A smooth precursor layer was the key factor to obtain a homogeneous and compact CIGS film. - Highlights: • An optimized sputtered indium film • An optimized alloying process of metallic precursor • An observation of nodules forming on the indium film and precursor surface • An observation of cauliflower structure in copper indium gallium selenide film • The relationship between precursor and CIGS film surface morphology.

  14. Ternary-fragmentation-driving potential energies of 252Cf

    Science.gov (United States)

    Karthikraj, C.; Ren, Zhongzhou

    2017-12-01

    Within the framework of a simple macroscopic model, the ternary-fragmentation-driving potential energies of 252Cf are studied. In this work, all possible ternary-fragment combinations of 252Cf are generated by the use of atomic mass evaluation-2016 (AME2016) data and these combinations are minimized by using a two-dimensional minimization approach. This minimization process can be done in two ways: (i) with respect to proton numbers (Z1, Z2, Z3) and (ii) with respect to neutron numbers (N1, N2, N3) of the ternary fragments. In this paper, the driving potential energies for the ternary breakup of 252Cf are presented for both the spherical and deformed as well as the proton-minimized and neutron-minimized ternary fragments. From the proton-minimized spherical ternary fragments, we have obtained different possible ternary configurations with a minimum driving potential, in particular, the experimental expectation of Sn + Ni + Ca ternary fragmentation. However, the neutron-minimized ternary fragments exhibit a driving potential minimum in the true-ternary-fission (TTF) region as well. Further, the Q -value energy systematics of the neutron-minimized ternary fragments show larger values for the TTF fragments. From this, we have concluded that the TTF region fragments with the least driving potential and high Q values have a strong possibility in the ternary fragmentation of 252Cf. Further, the role of ground-state deformations (β2, β3, β4, and β6) in the ternary breakup of 252Cf is also studied. The deformed ternary fragmentation, which involves Z3=12 -19 fragments, possesses the driving potential minimum due to the larger oblate deformations. We also found that the ground-state deformations, particularly β2, strongly influence the driving potential energies and play a major role in determining the most probable fragment combinations in the ternary breakup of 252Cf.

  15. Growth Mechanism of Nanowires: Binary and Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Su, Ching-Hua; Hopkins, R. H.; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    Semiconductor nanowires exhibit very exciting optical and electrical properties including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here the mechanism of nanowire growth from the melt-liquid-vapor medium. We describe preliminary results of binary and ternary selenide materials in light of recent theories. Experiments were performed with lead selenide and thallium arsenic selenide systems which are multifunctional material and have been used for detectors, acousto-optical, nonlinear and radiation detection applications. We observed that small units of nanocubes and elongated nanoparticles arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places. Growth of lead selenide nanowires was performed by physical vapor transport method and thallium arsenic selenide nanowire by vapor-liquid-solid (VLS) method. In some cases very long wires (>mm) are formed. To achieve this goal experiments were performed to create situation where nanowires grew on the surface of solid thallium arsenic selenide itself.

  16. Delay Insensitive Ternary CMOS Logic for Secure Hardware

    Directory of Open Access Journals (Sweden)

    Ravi S. P. Nair

    2015-09-01

    Full Text Available As digital circuit design continues to evolve due to progress of semiconductor processes well into the sub 100 nm range, clocked architectures face limitations in a number of cases where clockless asynchronous architectures generate less noise and produce less electro-magnetic interference (EMI. This paper develops the Delay-Insensitive Ternary Logic (DITL asynchronous design paradigm that combines design aspects of similar dual-rail asynchronous paradigms and Boolean logic to create a single wire per bit, three voltage signaling and logic scheme. DITL is compared with other delay insensitive paradigms, such as Pre-Charge Half-Buffers (PCHB and NULL Convention Logic (NCL on which it is based. An application of DITL is discussed in designing secure digital circuits resistant to side channel attacks based on measurement of timing, power, and EMI signatures. A Secure DITL Adder circuit is designed at the transistor level, and several variance parameters are measured to validate the efficiency of DITL in resisting side channel attacks. The DITL design methodology is then applied to design a secure 8051 ALU.

  17. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  18. Indacenodithienothiophene-Based Ternary Organic Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Gasparini, Nicola, E-mail: nicola.gasparini@fau.de [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany); García-Rodríguez, Amaranda [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Prosa, Mario [Istituto per lo Studio dei Materiali Nanostrutturati (ISMN), Consiglio Nazionale delle Ricerche (CNR), Bologna (Italy); Bayseç, Şebnem; Palma-Cando, Alex [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Katsouras, Athanasios; Avgeropoulos, Apostolos [Department of Materials Science Engineering, University of Ioannina, Ioannina (Greece); Pagona, Georgia; Gregoriou, Vasilis G. [Advent Technologies SA, Patras Science Park, Patra (Greece); National Hellenic Research Foundation (NHRF), Athens (Greece); Chochos, Christos L. [Department of Materials Science Engineering, University of Ioannina, Ioannina (Greece); Advent Technologies SA, Patras Science Park, Patra (Greece); Allard, Sybille; Scherf, Ulrich [Macromolecular Chemistry Group (buwmakro), Institute for Polymer Technology, BergischeUniversität Wuppertal, Wuppertal (Germany); Brabec, Christoph J. [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany); Bavarian Center for Applied Energy Research (ZAE Bayern), Erlangen (Germany); Ameri, Tayebeh, E-mail: nicola.gasparini@fau.de [Institute of Materials for Electronics and Energy Technology (I-MEET), Friedrich-Alexander-University Erlangen-Nuremberg, Erlangen (Germany)

    2017-01-13

    One of the key aspects to achieve high efficiency in ternary bulk-hetorojunction solar cells is the physical and chemical compatibility between the donor materials. Here, we report the synthesis of a novel conjugated polymer (P1) containing alternating pyridyl[2,1,3]thiadiazole between two different donor fragments, dithienosilole and indacenodithienothiophene (IDTT), used as a sensitizer in a host system of indacenodithieno[3,2-b]thiophene,2,3-bis(3-(octyloxy)phenyl)quinoxaline (PIDTTQ) and [6,6]-phenyl C{sub 70} butyric acid methyl ester (PC{sub 71}BM). We found that the use of the same IDTT unit in the host and guest materials does not lead to significant changes in the morphology of the ternary blend compared to the host binary. With the complementary use of optoelectronic characterizations, we found that the ternary cells suffer from a lower mobility-lifetime (μτ) product, adversely impacting the fill factor. However, the significant light harvesting in the near infrared region improvement, compensating the transport losses, results in an overall power conversion efficiency enhancement of ~7% for ternary blends as compared to the PIDTTQ:PC{sub 71}BM devices.

  19. Self-triggered coordination with ternary controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo

    2012-01-01

    This paper regards coordination of networked systems with ternary controllers. We develop a hybrid coordination system which implements a self-triggered communication policy, based on polling the neighbors upon need. We prove that the proposed scheme ensures finite-time convergence to a neighborhood

  20. Ternary gradient metal-organic frameworks.

    Science.gov (United States)

    Liu, Chong; Rosi, Nathaniel L

    2017-09-08

    Gradient MOFs contain directional gradients of either structure or functionality. We have successfully prepared two ternary gradient MOFs based on bMOF-100 analogues, namely bMOF-100/102/106 and bMOF-110/100/102, via cascade ligand exchange reactions. The cubic unit cell parameter discrepancy within an individual ternary gradient MOF crystal is as large as ∼1 nm, demonstrating the impressive compatibility and flexibility of the component MOF materials. Because of the presence of a continuum of unit cells, the pore diameters within individual crystals also change in a gradient fashion from ∼2.5 nm to ∼3.0 nm for bMOF-100/102/106, and from ∼2.2 nm to ∼2.7 nm for bMOF-110/100/102, indicating significant porosity gradients. Like previously reported binary gradient MOFs, the composition of the ternary gradient MOFs can be easily controlled by adjusting the reaction conditions. Finally, X-ray diffraction and microspectrophotometry were used to analyse fractured gradient MOF crystals by comparing unit cell parameters and absorbance spectra at different locations, thus revealing the profile of heterogeneity (i.e. gradient distribution of properties) and further confirming the formation of ternary gradient MOFs.

  1. TERNARY ALLOYS OF URANIUM, COLUMBIUM, AND ZIRCONIUM

    Science.gov (United States)

    Foote, F.G.

    1960-08-01

    Ternary alloys of uranium are described which are useful as neutron- reflecting materials in a fast neutron reactor. They are especially resistant to corrosion caused by oxidative processes of gascous or aqueous origin and comprise uranium as the predominant metal with zirconiunn and niobium wherein the total content of the minor alloying elements is between 2 and 8% by weight.

  2. Does Science Also Prefer a Ternary Pattern?

    Science.gov (United States)

    Pogliani, L.; Klein, D. J.; Balaban, A. T.

    2006-01-01

    Through the importance of the number three in our culture and the strange preference for a ternary pattern of our nature one can perceive how and why number theory degraded to numerology. The strong preference of our minds for simple patterns can be read as the key to understanding not only the development of numerology, but also why scientists…

  3. Angular distribution in ternary cold fission

    International Nuclear Information System (INIS)

    Delion, D.S.; J.W. Goethe Univ., Frankfurt; Sandulescu, A.; J.W. Goethe Univ., Frankfurt; Greiner, W.

    2003-01-01

    We describe the spontaneous ternary cold fission of 252 Cf, accompanied by 4 He, 10 Be and 14 C. The light cluster decays from the first resonant eigenstate in the Coulomb potential plus a harmonic oscillator potential. We have shown that the angular distribution of the emitted light particle is strongly connected with its deformation and the equatorial distance. (author)

  4. Superconducting state parameters of ternary metallic glasses

    Indian Academy of Sciences (India)

    Administrator

    to binary metallic glasses. They are of interest since third element can modify the physical properties of binary metallic glasses and can also be used as a probe to study the host. ..... conducting nature in the present case. When we. Figure 6. Variation of transition temperature (TC) with valance (Z) of ternary metallic glasses.

  5. Semiconductor apparatus and method of fabrication for a semiconductor apparatus

    NARCIS (Netherlands)

    2010-01-01

    The invention relates to a semiconductor apparatus (1) and a method of fabrication for a semiconductor apparatus (1), wherein the semiconductor apparatus (1) comprises a semiconductor layer (2) and a passivation layer (3), arranged on a surface of the semiconductor layer (2), for passivating the

  6. Chalcopyrite CuInSe2 films prepared by reactive sputtering

    International Nuclear Information System (INIS)

    Lommasson, T.C.; Burnett, A.F.; Chou, L.H.; Thornton, J.A.; Kim, M.

    1987-01-01

    Polycrystalline films of CuInSe 2 have been prepared on glass substrates by reactive cosputtering from Cu and In planar magnetron targets using Ar-H 2 Se as a working gas. The film compositions were close to the Cu 2 Se-In 2 Se 3 tie-line of the ternary phase diagram with Cu/In ratios ranging from 0.75 to about 2. This paper reports on measurements of the structural, electronic and optical properties of the films. The coatings on the Cu-rich side of the stoichiometric composition were characterized by a columnar structure with an uneven surface topography

  7. Design of a novel quantum reversible ternary up-counter

    Science.gov (United States)

    Houshmand, Pouran; Haghparast, Majid

    2015-08-01

    Reversible logic has been recently considered as an interesting and important issue in designing combinational and sequential circuits. The combination of reversible logic and multi-valued logic can improve power dissipation, time and space utilization rate of designed circuits. Only few works have been reported about sequential reversible circuits and almost there are no paper exhibited about quantum ternary reversible counter. In this paper, first we designed 2-qutrit and 3-qutrit quantum reversible ternary up-counters using quantum ternary reversible T-flip-flop and quantum reversible ternary gates. Then we proposed generalized quantum reversible ternary n-qutrit up-counter. We also introduced a new approach for designing any type of n-qutrit ternary and reversible counter. According to the results, we can conclude that applying second approach quantum reversible ternary up-counter is better than the others.

  8. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  9. Contacts to semiconductors

    International Nuclear Information System (INIS)

    Tove, P.A.

    1975-08-01

    Contacts to semiconductors play an important role in most semiconductor devices. These devices range from microelectronics to power components, from high-sensitivity light or radiation detectors to light-emitting of microwave-generating components. Silicon is the dominating material but compound semiconductors are increasing in importance. The following survey is an attempt to classify contact properties and the physical mechanisms involved, as well as fabrication methods and methods of investigation. The main interest is in metal-semiconductor type contacts where a few basic concepts are dealt with in some detail. (Auth.)

  10. Semiconductor Electrical Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Electrical Measurements Laboratory is a research laboratory which complements the Optical Measurements Laboratory. The laboratory provides for Hall...

  11. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David; Yu, Liyang; Fransson, Erik; Gó mez, André s; Primetzhofer, Daniel; Amassian, Aram; Campoy-Quiles, Mariano; Mü ller, Christian

    2016-01-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  12. A Solution-Doped Polymer Semiconductor:Insulator Blend for Thermoelectrics

    KAUST Repository

    Kiefer, David

    2016-09-01

    Poly(ethylene oxide) is demonstrated to be a suitable matrix polymer for the solution-doped conjugated polymer poly(3-hexylthiophene). The polarity of the insulator combined with carefully chosen processing conditions permits the fabrication of tens of micrometer-thick films that feature a fine distribution of the F4TCNQ dopant:semiconductor complex. Changes in electrical conductivity from 0.1 to 0.3 S cm−1 and Seebeck coefficient from 100 to 60 μV K−1 upon addition of the insulator correlate with an increase in doping efficiency from 20% to 40% for heavily doped ternary blends. An invariant bulk thermal conductivity of about 0.3 W m−1 K−1 gives rise to a thermoelectric Figure of merit ZT ∼ 10−4 that remains unaltered for an insulator content of more than 60 wt%. Free-standing, mechanically robust tapes illustrate the versatility of the developed dopant:semiconductor:insulator ternary blends.

  13. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-05-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  14. Room Temperature Hard Radiation Detectors Based on Solid State Compound Semiconductors: An Overview

    Science.gov (United States)

    Mirzaei, Ali; Huh, Jeung-Soo; Kim, Sang Sub; Kim, Hyoun Woo

    2018-03-01

    Si and Ge single crystals are the most common semiconductor radiation detectors. However, they need to work at cryogenic temperatures to decrease their noise levels. In contrast, compound semiconductors can be operated at room temperature due to their ability to grow compound materials with tunable densities, band gaps and atomic numbers. Highly efficient room temperature hard radiation detectors can be utilized in biomedical diagnostics, nuclear safety and homeland security applications. In this review, we discuss room temperature compound semiconductors. Since the field of radiation detection is broad and a discussion of all compound materials for radiation sensing is impossible, we discuss the most important materials for the detection of hard radiation with a focus on binary heavy metal semiconductors and ternary and quaternary chalcogenide compounds.

  15. Disorder phenomena in covalent semiconductors

    International Nuclear Information System (INIS)

    Popescu, M.A.

    1975-01-01

    The structure of the amorphous semiconductors has been investigated by means of X-ray diffraction and by computer simulation of random network models. Amorphous germanium contains mainly five and six-membered rings of atoms. In glassy state, the ternary compounds A 2 B 4 C 2 5 , such as CdGeAs 2 contain only even rings of atoms (six-membered and eight-membered rings). In the memory glasses of the type A 2 B 4 C 2 5 , such as GeAs 2 Te 7 , the valency state of every element is that from the crystal and important van der Waals forces are effective in the network. No Ge-Ge, Ge-As and As-As bonds are formed. The high pressure forms of the germanium have been simulated by computer. The force constants of the covalent bonds in Ge III and Ge IV differ from those in Ge I. The bond bending force constant decreases rapidly when the density of the crystal increases, a fact which has been imparted to a reduction of the sp 3 hybridization. The compressibility curve of the Ge I has been explained. The effect of the radial and uniaxial deformation on the non-crystalline networks has been studied. The compressibility of the amorphous germanium is by 1.5 per cent greater than that of crystalline germanium. The Poisson coefficient for a-Ge network is 0.233. The structure of the As 2 S 3 glass doped with different amounts of germanium (up to 40 at. per cent) and silver (up to 12 at. per cent) has been investigated. The As 2 S 3 Gesub(x) compositions are constituted from a disordered packing of structural units whose chemical composition and relative proportion in the glass essentially depends on the germanium content. (author)

  16. Semiconductors data handbook

    CERN Document Server

    Madelung, Otfried

    2004-01-01

    This volume Semiconductors: Data Handbook contains frequently used data from the corresponding larger Landolt-Börnstein handbooks in a low price book for the individual scientist working in the laboratory. The Handbook contain important information about a large number of semiconductors

  17. Semiconductor radiation detection systems

    CERN Document Server

    2010-01-01

    Covers research in semiconductor detector and integrated circuit design in the context of medical imaging using ionizing radiation. This book explores other applications of semiconductor radiation detection systems in security applications such as luggage scanning, dirty bomb detection and border control.

  18. Spin physics in semiconductors

    CERN Document Server

    Dyakonov, Mikhail I

    2008-01-01

    This book describes beautiful optical and transport phenomena related to the electron and nuclear spins in semiconductors with emphasis on a clear presentation of the physics involved. Recent results on quantum wells and quantum dots are reviewed. The book is intended for students and researchers in the fields of semiconductor physics and nanoelectronics.

  19. Compound Semiconductor Radiation Detectors

    CERN Document Server

    Owens, Alan

    2012-01-01

    Although elemental semiconductors such as silicon and germanium are standard for energy dispersive spectroscopy in the laboratory, their use for an increasing range of applications is becoming marginalized by their physical limitations, namely the need for ancillary cooling, their modest stopping powers, and radiation intolerance. Compound semiconductors, on the other hand, encompass such a wide range of physical and electronic properties that they have become viable competitors in a number of applications. Compound Semiconductor Radiation Detectors is a consolidated source of information on all aspects of the use of compound semiconductors for radiation detection and measurement. Serious Competitors to Germanium and Silicon Radiation Detectors Wide-gap compound semiconductors offer the ability to operate in a range of hostile thermal and radiation environments while still maintaining sub-keV spectral resolution at X-ray wavelengths. Narrow-gap materials offer the potential of exceeding the spectral resolutio...

  20. Terahertz semiconductor nonlinear optics

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias

    2013-01-01

    In this proceedings we describe our recent results on semiconductor nonlinear optics, investigated using single-cycle THz pulses. We demonstrate the nonlinear absorption and self-phase modulation of strong-field THz pulses in doped semiconductors, using n-GaAs as a model system. The THz...... nonlinearity in doped semiconductors originates from the near-instantaneous heating of free electrons in the ponderomotive potential created by electric field of the THz pulse, leading to ultrafast increase of electron effective mass by intervalley scattering. Modification of effective mass in turn leads...... to a decrease of plasma frequency in semiconductor and produces a substantial modification of THz-range material dielectric function, described by the Drude model. As a result, the nonlinearity of both absorption coefficient and refractive index of the semiconductor is observed. In particular we demonstrate...

  1. Organic semiconductor crystals.

    Science.gov (United States)

    Wang, Chengliang; Dong, Huanli; Jiang, Lang; Hu, Wenping

    2018-01-22

    Organic semiconductors have attracted a lot of attention since the discovery of highly doped conductive polymers, due to the potential application in field-effect transistors (OFETs), light-emitting diodes (OLEDs) and photovoltaic cells (OPVs). Single crystals of organic semiconductors are particularly intriguing because they are free of grain boundaries and have long-range periodic order as well as minimal traps and defects. Hence, organic semiconductor crystals provide a powerful tool for revealing the intrinsic properties, examining the structure-property relationships, demonstrating the important factors for high performance devices and uncovering fundamental physics in organic semiconductors. This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications. We hope that this comprehensive summary can give a clear picture of the state-of-art status and guide future work in this area.

  2. The ternary system nickel-nobium-carbon

    International Nuclear Information System (INIS)

    Stadelmaier, H.H.; Fiedler, M.L.

    1975-01-01

    The ternary system nickel-niobium-carbon was studied by metallographic and X-ray diffraction methods to produce a liquidus projection and an isothermal section at 1,100 0 C. The liquidus projection is dominated by a wide field of primary NbC that extends far into the nickel corner of the composition triangle. Only one ternary compound is observed in this system, an eta-carbide formed in a peritectoid reaction. It has a narrow homogeneity range at Ni 2 Nb 4 C, and its lattice constant in alloys quenched from 1,100 0 C varies between 11.659 and 11.667 A. No eta-carbide Ni 3 Nb 3 C or Ni 6 Nb 6 could be detected. (orig.) [de

  3. Controlling the emission wavelength in group III-V semiconductor laser diodes

    KAUST Repository

    Ooi, Boon S.

    2016-12-29

    Methods are provided for modifying the emission wavelength of a semiconductor quantum well laser diode, e.g. by blue shifting the emission wavelength. The methods can be applied to a variety of semiconductor quantum well laser diodes, e.g. group III-V semiconductor quantum wells. The group III-V semiconductor can include AlSb, AlAs, Aln, AlP, BN, GaSb, GaAs, GaN, GaP, InSb, InAs, InN, and InP, and group III-V ternary semiconductors alloys such as AlxGai.xAs. The methods can results in a blue shifting of about 20 meV to 350 meV, which can be used for example to make group III-V semiconductor quantum well laser diodes with an emission that is orange or yellow. Methods of making semiconductor quantum well laser diodes and semiconductor quantum well laser diodes made therefrom are also provided.

  4. Low-cost fabrication of ternary CuInSe{sub 2} nanocrystals by colloidal route using a novel combination of volatile and non-volatile capping agents

    Energy Technology Data Exchange (ETDEWEB)

    Chawla, Parul; Narain Sharma, Shailesh, E-mail: shailesh@nplindia.org; Singh, Son

    2014-11-15

    Wet-route synthesis of CuInSe{sub 2} (CISe) nanocrystals has been envisaged with the utilization of the unique combination of coordinating ligand and non coordinating solvent. Our work demonstrates the formation of a single-phase, nearly stoichiometric and monodispersive, stable and well-passivated colloidal ternary CISe nanocrystals (band gap (E{sub g})∼1.16 eV) using a novel combination of ligands; viz. volatile arylamine aniline and non-volatile solvent 1-octadecene. The synthesis and growth conditions have been manoeuvred using the colligative properties of the mixture and thus higher growth temperature (∼250 °C) could be attained that promoted larger grain growth. The beneficial influence of the capping agents (aniline and 1-octadecene) on the properties of chalcopyrite nanocrystals has enabled us to pictorally model the structural, morphological and optoelectronic aspects of CISe nanoparticles. - Graphical abstract: Without resorting to any post-selenization process and using the colligative properties of the mixture comprising of volatile aniline and non-volatile 1-octadecene to manoeuvre the growth conditions to promote Ostwald ripening, a single phase, monodispersive and nearly stoichiometric ternary CISe nanocrystals are formed by wet-synthesis route. - Highlights: • Wet-route synthesis of CISe nanocrystals reported without post-selenization process. • Single-phase, stable and well-passivated colloidal ternary CISe nanocrystals formed. • Novel combination of capping agents: volatile aniline and non-volatile 1-octadecene. • Higher growth temperature attained using the colligative properties of the mixture. • Metallic salts presence explains exp. and theoretical boiling point difference.

  5. Equilibrium study for ternary mixtures of biodiesel

    Science.gov (United States)

    Doungsri, S.; Sookkumnerd, T.; Wongkoblap, A.; Nuchitprasittichai, A.

    2017-11-01

    The liquid-liquid equilibrium (LLE) data for the ternary mixtures of methanol + fatty acid methyl ester (FAME) + palm oil and FAME + palm oil + glycerol at various temperatures from 35 to 55°C, the tie lines and binodial curves were also investigated and plotted in the equilibrium curve. The experimental results showed that the binodial curves of methanol + FAME + palm oil depended significantly with temperature while the binodial curves of FAME + palm oil + glycerol illustrated insignificant change with temperatures. The interaction parameters between liquid pair obtained for NRTL (Nonrandom Two-Liquid) and UNIQUAC (Universal Quasi-Chemical Theory) models from the experimental data were also investigated. It was found that the correlated parameters of UNIQUAC model for system of FAME + palm oil + glycerol, denoted as a13 and a31, were 580.42K and -123.69K, respectively, while those for system of methanol + FAME + palm oil, denoted as a42 and a24, were 71.48 K and 965.57K, respectively. The ternary LLE data reported here would be beneficial for engineers and scientists to use for prediction of yield and purity of biodiesel for the production. The UNIQUAC model agreed well with the experimental data of ternary mixtures of biodiesel.

  6. Design of ternary clocked adiabatic static random access memory

    Science.gov (United States)

    Pengjun, Wang; Fengna, Mei

    2011-10-01

    Based on multi-valued logic, adiabatic circuits and the structure of ternary static random access memory (SRAM), a design scheme of a novel ternary clocked adiabatic SRAM is presented. The scheme adopts bootstrapped NMOS transistors, and an address decoder, a storage cell and a sense amplifier are charged and discharged in the adiabatic way, so the charges stored in the large switch capacitance of word lines, bit lines and the address decoder can be effectively restored to achieve energy recovery during reading and writing of ternary signals. The PSPICE simulation results indicate that the ternary clocked adiabatic SRAM has a correct logic function and low power consumption. Compared with ternary conventional SRAM, the average power consumption of the ternary adiabatic SRAM saves up to 68% in the same conditions.

  7. Ternary q-Virasoro-Witt Hom-Nambu-Lie algebras

    International Nuclear Information System (INIS)

    Ammar, F; Makhlouf, A; Silvestrov, S

    2010-01-01

    In this paper we construct ternary q-Virasoro-Witt algebras which q-deform the ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos using su(1, 1) enveloping algebra techniques. The ternary Virasoro-Witt algebras constructed by Curtright, Fairlie and Zachos depend on a parameter and are not Nambu-Lie algebras for all but finitely many values of this parameter. For the parameter values for which the ternary Virasoro-Witt algebras are Nambu-Lie, the corresponding ternary q-Virasoro-Witt algebras constructed in this paper are also Hom-Nambu-Lie because they are obtained from the ternary Nambu-Lie algebras using the composition method. For other parameter values this composition method does not yield a Hom-Nambu-Lie algebra structure for q-Virasoro-Witt algebras. We show however, using a different construction, that the ternary Virasoro-Witt algebras of Curtright, Fairlie and Zachos, as well as the general ternary q-Virasoro-Witt algebras we construct, carry a structure of the ternary Hom-Nambu-Lie algebra for all values of the involved parameters.

  8. Description of light charged particle emission in ternary fission

    International Nuclear Information System (INIS)

    Andreev, A. V.; Adamian, G. G.; Antonenko, N. V.; Kuklin, S. N.; Scheid, W.

    2010-01-01

    We consider the motion of three fragments starting from the scission point of ternary system. In the alpha-accompanied ternary fission the initial conditions are not the free parameters and determined by minimization of potential energy at scission point. In the trajectory calculations the angular distribution and mean value of the kinetic energy of the alpha-particles are well described in the spontaneous ternary fission of 252 Cf. In the Be- and C-accompanied ternary fission we found that the emission of the third particle occurs from one of the heavy fragments after their separation. (authors)

  9. Role of ternary fission in synthesis of bypassed nuclei

    International Nuclear Information System (INIS)

    Kramarovskij, Ya.M.; Chechev, V.P.

    1983-01-01

    A possible influence of ternary fission with escape of neutron-enriched light charged particles on the synthesis of bypassed nuclides is considered. It is shown that this concept cannot give explanation of bypassed isotope concentrations, but it can make some contribution, if the probability of ternary fission for superheavy nuclei grows sharply with Z 2 /A parameter. The account of β-delayed fission contributes to the shift of ternary fission fragments into the region of neutron-deficient isotopes. Consistent consideration of the ternary fission role in the nucleosynthesis is possible only with an important accumulation of experimental and theoretical data on this process, particularly for the nuclei with Z > 100

  10. Fusibility diagram of ternary system with incongruently melting double compound

    International Nuclear Information System (INIS)

    Lutsyk, V.I.; Vorob'eva, V.P.; Sumkina, O.G.

    1989-01-01

    Temperature calculation and properties of ternary eutectics and concentration coordinates of ternary peritectics accoriding to the linear model of initial crystallization surfaces as an element of the expert system for simulating fusibility diagrams of ternary systems is considered. It is shown that the calculated and experimental data on coordinates of ternary nonvariant points in the systems NaCl-PbCl 2 -CdCl 2 , PbCl 2 -CaCl 2 -UCl 4 , CaF 2 -NaF-CsF and UCl 3 -CaCl 2 -ThCl 4 are in good agreement

  11. A High-Yield Synthesis of Chalcopyrite CuInS2 Nanoparticles with Exceptional Size Control

    Directory of Open Access Journals (Sweden)

    Chivin Sun

    2009-01-01

    Full Text Available We report high-yield and efficient size-controlled syntheses of Chalcopyrite CuInS2 nanoparticles by decomposing molecular single source precursors (SSPs via microwave irradiation in the presence of 1,2-ethanedithiol at reaction temperatures as low as 100°C and times as short as 30 minutes. The nanoparticles sizes were 1.8 nm to 10.8 nm as reaction temperatures were varied from 100°C to 200°C with the bandgaps from 2.71 eV to 1.28 eV with good size control and high yields (64%–95%. The resulting nanoparticles were analyzed by XRD, UV-Vis, ICP-OES, XPS, SEM, EDS, and HRTEM. Titration studies by 1H NMR using SSP 1 with 1,2-ethanedithiol and benzyl mercaptan were conducted to elucidate the formation of Chalcopyrite CuInS2 nanoparticles.

  12. Co-culture microorganisms with different initial proportions reveal the mechanism of chalcopyrite bioleaching coupling with microbial community succession.

    Science.gov (United States)

    Ma, Liyuan; Wang, Xingjie; Feng, Xue; Liang, Yili; Xiao, Yunhua; Hao, Xiaodong; Yin, Huaqun; Liu, Hongwei; Liu, Xueduan

    2017-01-01

    The effect of co-culture microorganisms with different initial proportions on chalcopyrite bioleaching was investigated. Communities were rebuilt by six typical strains isolated from the same habitat. The results indicated, by community with more sulfur oxidizers at both 30 and 40°C, the final copper extraction rate was 19.8% and 6.5% higher, respectively, than that with more ferrous oxidizers. The variations of pH, redox potential, ferrous and copper ions in leachate also provided evidences that community with more sulfur oxidizers was more efficient. Community succession of free and attached cells revealed that initial proportions played decisive roles on community dynamics at 30°C, while communities shared similar structures, not relevant to initial proportions at 40°C. X-ray diffraction analysis confirmed different microbial functions on mineral surface. A mechanism model for chalcopyrite bioleaching was established coupling with community succession. This will provide theoretical basis for reconstructing an efficient community in industrial application. Copyright © 2016 Elsevier Ltd. All rights reserved.

  13. A comparative study of solution-processed low- and high-band-gap chalcopyrite thin-film solar cells

    International Nuclear Information System (INIS)

    Park, Se Jin; Moon, Sung Hwan; Min, Byoung Koun; Cho, Yunae; Kim, Ji Eun; Kim, Dong-Wook; Lee, Doh-Kwon; Gwak, Jihye; Kim, Jihyun

    2014-01-01

    Low-cost and printable chalcopyrite thin-film solar cells were fabricated by a precursor solution-based coating method with a multi-step heat-treatment process (oxidation, sulfurization, and selenization). The high-band-gap (1.57 eV) Cu(In x Ga 1−x )S 2 (CIGS) solar cell showed a high open-circuit voltage of 787 mV, whereas the low-band-gap (1.12 eV) Cu(In x Ga 1−x )(S 1−y Se y ) 2 (CIGSSe) cell exhibited a high short-circuit current density of 32.6 mA cm −2 . The energy conversion efficiencies were 8.28% for CIGS and 8.81% for CIGSSe under standard irradiation conditions. Despite similar efficiencies, the two samples showed notable differences in grain size, surface morphology, and interfacial properties. Low-temperature transport and admittance characteristics of the samples clearly revealed how their structural differences influenced their photovoltaic and electrical properties. Such analyses provide insight into the enhanced solar cell performance of the solution-processed chalcopyrite thin films. (paper)

  14. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  15. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  16. Introduction to Semiconductor Devices

    Science.gov (United States)

    Brennan, Kevin F.

    2005-03-01

    This volume offers a solid foundation for understanding the most important devices used in the hottest areas of electronic engineering today, from semiconductor fundamentals to state-of-the-art semiconductor devices in the telecommunications and computing industries. Kevin Brennan describes future approaches to computing hardware and RF power amplifiers, and explains how emerging trends and system demands of computing and telecommunications systems influence the choice, design and operation of semiconductor devices. In addition, he covers MODFETs and MOSFETs, short channel effects, and the challenges faced by continuing miniaturization. His book is both an excellent senior/graduate text and a valuable reference for practicing engineers and researchers.

  17. Spin physics in semiconductors

    CERN Document Server

    2017-01-01

    This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

  18. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  19. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  20. Defects in semiconductors

    CERN Document Server

    Romano, Lucia; Jagadish, Chennupati

    2015-01-01

    This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoret

  1. Biggest semiconductor installed

    CERN Multimedia

    2008-01-01

    Scientists and technicians at the European Laboratory for Particle Physics, commonly known by its French acronym CERN (Centre Europen pour la Recherche Nuclaire), have completed the installation of the largest semiconductor silicon detector.

  2. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  3. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  4. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  5. Electronic properties of semiconductor heterostructures

    International Nuclear Information System (INIS)

    Einevoll, G.T.

    1991-02-01

    Ten papers on the electronic properties of semiconductors and semiconductor heterostructures constitute the backbone of this thesis. Four papers address the form and validity of the single-band effective mass approximation for semiconductor heterostructures. In four other papers properties of acceptor states in bulk semiconductors and semiconductor heterostructures are studied using the novel effective bond-orbital model. The last two papers deal with localized excitions. 122 refs

  6. Synthesis and Characterization of Novel Ternary and Quaternary Alkali Metal Thiophosphates

    KAUST Repository

    Alahmary, Fatimah S.

    2014-05-01

    The ongoing development of nonlinear optical (NLO) crystals such as coherent mid-IR sources focuses on various classes of materials such as ternary and quaternary metal chalcophosphates. In case of thiophosphates, the connection between PS4-tetrahedral building blocks and metals gives rise to a broad structural variety where approximately one third of all known ternary (A/P/S) and quaternary (A/M/P/S) (A = alkali metal, M = metal) structures are acentric and potential nonlinear optical materials. The molten alkali metal polychalcophosphate fluxes are a well-established method for the synthesis of new ternary and quaternary thiophosphate and selenophosphate compounds. It has been a wide field of study and investigation through the last two decades. Here, the flux method is used for the synthesis of new quaternary phases containing Rb, Ag, P and S. Four new alkali metal thiophosphates, Rb4P2S10, RbAg5(PS4), Rb2AgPS4 and Rb3Ag9(PS4)4, have been synthesized successfully from high purity elements and binary starting materials. The new compounds were characterized by single crystal and powder X-ray diffraction, scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), ultraviolet-visible (UV-VIS), Raman spectroscopy, thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC). These compounds show interesting structural variety and physical properties. The crystal structures feature 3D anionic framework built up of PS4 tetrahedral units and charge balanced by Ag and alkali metal cations. All prepared compounds are semiconductors with band gap between 2.3 eV to 2.6 eV and most of them are thermally stable up to 600ºC.

  7. Discrete ternary particle swarm optimization for area optimization of MPRM circuits

    International Nuclear Information System (INIS)

    Yu Haizhen; Wang Pengjun; Wang Disheng; Zhang Huihong

    2013-01-01

    Having the advantage of simplicity, robustness and low computational costs, the particle swarm optimization (PSO) algorithm is a powerful evolutionary computation tool for synthesis and optimization of Reed-Muller logic based circuits. Exploring discrete PSO and probabilistic transition rules, the discrete ternary particle swarm optimization (DTPSO) is proposed for mixed polarity Reed-Muller (MPRM) circuits. According to the characteristics of mixed polarity OR/XNOR expression, a tabular technique is improved, and it is applied in the polarity conversion of MPRM functions. DTPSO is introduced to search the best polarity for an area of MPRM circuits by building parameter mapping relationships between particles and polarities. The computational results show that the proposed DTPSO outperforms the reported method using maxterm conversion starting from POS Boolean functions. The average saving in the number of terms is about 11.5%; the algorithm is quite efficient in terms of CPU time and achieves 12.2% improvement on average. (semiconductor integrated circuits)

  8. Neutron Damage and MAX Phase Ternary Compounds

    Energy Technology Data Exchange (ETDEWEB)

    Barsoum, Michael [Drexel Univ., Philadelphia, PA (United States); Hoffman, Elizabeth [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Sindelar, Robert [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Garcua-Duaz, Brenda [Savannah River Site (SRS), Aiken, SC (United States). Savannah River National Lab. (SRNL); Kohse, Gordon [Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

    2014-06-17

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  9. Neutron Damage and MAX Phase Ternary Compounds

    International Nuclear Information System (INIS)

    Barsoum, Michael; Hoffman, Elizabeth; Sindelar, Robert; Garcua-Diaz, Brenda; Kohse, Gordon

    2014-01-01

    The Demands of Gen IV nuclear power plants for long service life under neutron radiation at high temperature are severe. Advanced materials that would withstand high temperatures (up to 1000+ C) to high doses in a neutron field would be ideal for reactor internal structures and would add to the long service life and reliability of the reactors. The objective of this work is to investigate the response of a new class of machinable, conductive, layered, ternary transition metal carbides and nitrides - the so-called MAX phases - to low and moderate neutron dose levels.

  10. Embedding complete ternary tree in hypercubes using AVL trees

    NARCIS (Netherlands)

    S.A. Choudum; I. Raman (Indhumathi)

    2008-01-01

    htmlabstractA complete ternary tree is a tree in which every non-leaf vertex has exactly three children. We prove that a complete ternary tree of height h, TTh, is embeddable in a hypercube of dimension . This result coincides with the result of [2]. However, in this paper, the embedding utilizes

  11. Thermodynamic modeling of the Ti-Al-Cr ternary system

    International Nuclear Information System (INIS)

    Chen Leyi; Qiu Aitao; Liu Lanjie; Jiang Ming; Lu Xionggang; Li Chonghe

    2011-01-01

    Research highlights: → The full experimental results of the Ti-Al-Cr ternary system and its sub-binary systems are reviewed and analysed in detail. → Based on the latest thermodynamic assessments of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the thermodynamic parameters of the Ti-Al-Cr ternary system are fully assessed by the Calphad method. → The transformation of disorder to order (bcc a 2 to B2) and the new ternary compound L 12T i 25 Cr 8 Al 67 are considered in this work. - Abstract: The Ti-Al-Cr ternary system is one of the most important systems to studying the titanium alloys. Some experimental data of this ternary system are available and a few partial thermodynamic assessments are reported. However, no full thermodynamic descriptions were published. In this study, the previous work on the Ti-Al-Cr system and its related binary systems are reviewed. Based on the thermodynamic descriptions of the Ti-Al, Ti-Cr and Al-Cr systems and the ternary experimental data in literature, the Ti-Al-Cr ternary system is assessed by means of the Calphad method. Several isothermal sections from 1073 K to 1573 K and some invariant reactions are calculated, which are in good agreement with the most of the experimental results.

  12. Density-Driven segregation in Binary and Ternary Granular Systems

    NARCIS (Netherlands)

    Windows-Yule, Kit; Parker, David

    2015-01-01

    We present a first experimental study of density-induced segregation within a three-dimensional, vibrofluidised, ternary granular system. Using Positron Emission Particle Tracking (PEPT), we study the steady-state particle distributions achieved by binary and ternary granular beds under a variety of

  13. Calculation of ternary interdiffusion coefficients using a single diffusion couple

    Czech Academy of Sciences Publication Activity Database

    Čermák, Jiří; Rothová, Věra

    2016-01-01

    Roč. 54, č. 5 (2016), s. 305-314 ISSN 0023-432X R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068 Institutional support: RVO:68081723 Keywords : diffusion * interdiffusion * ternary alloys * ternary diffusion coefficients Subject RIV: BJ - Thermodynamics Impact factor: 0.366, year: 2016

  14. A high-speed interconnect network using ternary logic

    DEFF Research Database (Denmark)

    Madsen, Jens Kargaard; Long, S. I.

    1995-01-01

    This paper describes the design and implementation of a high-speed interconnect network (ICN) for a multiprocessor system using ternary logic. By using ternary logic and a fast point-to-point communication technique called STARI (Self-Timed At Receiver's Input), the communication between...

  15. Symmetric weak ternary quantum homomorphic encryption schemes

    Science.gov (United States)

    Wang, Yuqi; She, Kun; Luo, Qingbin; Yang, Fan; Zhao, Chao

    2016-03-01

    Based on a ternary quantum logic circuit, four symmetric weak ternary quantum homomorphic encryption (QHE) schemes were proposed. First, for a one-qutrit rotation gate, a QHE scheme was constructed. Second, in view of the synthesis of a general 3 × 3 unitary transformation, another one-qutrit QHE scheme was proposed. Third, according to the one-qutrit scheme, the two-qutrit QHE scheme about generalized controlled X (GCX(m,n)) gate was constructed and further generalized to the n-qutrit unitary matrix case. Finally, the security of these schemes was analyzed in two respects. It can be concluded that the attacker can correctly guess the encryption key with a maximum probability pk = 1/33n, thus it can better protect the privacy of users’ data. Moreover, these schemes can be well integrated into the future quantum remote server architecture, and thus the computational security of the users’ private quantum information can be well protected in a distributed computing environment.

  16. Nanoscratching of nylon 66-based ternary nanocomposites

    International Nuclear Information System (INIS)

    Dasari, Aravind; Yu Zhongzhen; Mai Yiuwing

    2007-01-01

    The nanoscratch behavior of nylon 66/SEBS-g-MA/clay ternary nanocomposites produced by different blending protocols with contrasting microstructures is studied by using atomic force and transmission electron microscopy. A standard diamond Berkovich indenter is used for scratching and a low load of 1 mN, along with a low sliding velocity of 1 μm s -1 , are employed for this purpose. It is shown that in order to resist penetration it is more important to have exfoliated clay in the continuous nylon matrix during nanoscratching than to have the clay in the dispersed soft rubber domains. The results obtained also explain the preferred usage of ternary nanocomposites compared to binary nanocomposites, particularly nylon 66/exfoliated clay nanocomposites. This research extends current basic knowledge and provides new insights on the nature of nanoscale processes that occur during nanoscratching of polymer nanocomposites. Critical questions are raised on the relationships between the penetration depth and material deformation and damage left behind the moving indenter

  17. Irregular Homogeneity Domains in Ternary Intermetallic Systems

    Directory of Open Access Journals (Sweden)

    Jean-Marc Joubert

    2015-12-01

    Full Text Available Ternary intermetallic A–B–C systems sometimes have unexpected behaviors. The present paper examines situations in which there is a tendency to simultaneously form the compounds ABx, ACx and BCx with the same crystal structure. This causes irregular shapes of the phase homogeneity domains and, from a structural point of view, a complete reversal of site occupancies for the B atom when crossing the homogeneity domain. This work reviews previous studies done in the systems Fe–Nb–Zr, Hf–Mo–Re, Hf–Re–W, Mo–Re–Zr, Re–W–Zr, Cr–Mn–Si, Cr–Mo–Re, and Mo–Ni–Re, and involving the topologically close-packed Laves, χ and σ phases. These systems have been studied using ternary isothermal section determination, DFT calculations, site occupancy measurement using joint X-ray, and neutron diffraction Rietveld refinement. Conclusions are drawn concerning this phenomenon. The paper also reports new experimental or calculated data on Co–Cr–Re and Fe–Nb–Zr systems.

  18. Plasmonic spectral tunability of conductive ternary nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Kassavetis, S.; Patsalas, P., E-mail: ppats@physics.auth.gr [Department of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki (Greece); Bellas, D. V.; Lidorikis, E. [Department of Materials Science and Engineering, University of Ioannina, GR-45110 Ioannina (Greece); Abadias, G. [Institut Pprime, Département Physique et Mécanique des Matériaux, Université de Poitiers-CNRS-ENSMA, 86962 Chasseneuil-Futuroscope (France)

    2016-06-27

    Conductive binary transition metal nitrides, such as TiN and ZrN, have emerged as a category of promising alternative plasmonic materials. In this work, we show that ternary transition metal nitrides such as Ti{sub x}Ta{sub 1−x}N, Ti{sub x}Zr{sub 1−x}N, Ti{sub x}Al{sub 1−x}N, and Zr{sub x}Ta{sub 1−x}N share the important plasmonic features with their binary counterparts, while having the additional asset of the exceptional spectral tunability in the entire visible (400–700 nm) and UVA (315–400 nm) spectral ranges depending on their net valence electrons. In particular, we demonstrate that such ternary nitrides can exhibit maximum field enhancement factors comparable with gold in the aforementioned broadband range. We also critically evaluate the structural features that affect the quality factor of the plasmon resonance and we provide rules of thumb for the selection and growth of materials for nitride plasmonics.

  19. Thermoelectricity Generation and Electron-Magnon Scattering in a Natural Chalcopyrite Mineral from a Deep-Sea Hydrothermal Vent.

    Science.gov (United States)

    Ang, Ran; Khan, Atta Ullah; Tsujii, Naohito; Takai, Ken; Nakamura, Ryuhei; Mori, Takao

    2015-10-26

    Current high-performance thermoelectric materials require elaborate doping and synthesis procedures, particularly in regard to the artificial structure, and the underlying thermoelectric mechanisms are still poorly understood. Here, we report that a natural chalcopyrite mineral, Cu1+x Fe1-x S2 , obtained from a deep-sea hydrothermal vent can directly generate thermoelectricity. The resistivity displayed an excellent semiconducting character, and a large thermoelectric power and high power factor were found in the low x region. Notably, electron-magnon scattering and a large effective mass was detected in this region, thus suggesting that the strong coupling of doped carriers and antiferromagnetic spins resulted in the natural enhancement of thermoelectric properties during mineralization reactions. The present findings demonstrate the feasibility of thermoelectric energy generation and electron/hole carrier modulation with natural materials that are abundant in the Earth's crust. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Method of doping a semiconductor

    International Nuclear Information System (INIS)

    Yang, C.Y.; Rapp, R.A.

    1983-01-01

    A method is disclosed for doping semiconductor material. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

  1. Structural and elastic properties of defect chalcopyrite HgGa{sub 2}S{sub 4} under high pressure

    Energy Technology Data Exchange (ETDEWEB)

    Gomis, O., E-mail: osgohi@fis.upv.es [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Santamaría-Pérez, D. [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universitat de València, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 València (Spain); Departamento de Química Física I, Universidad Complutense de Madrid, MALTA Consolider Team, Avenida Complutense s/n, 28040 Madrid (Spain); Vilaplana, R.; Luna, R. [Centro de Tecnologías Físicas: Acústica, Materiales y Astrofísica, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Sans, J.A.; Manjón, F.J. [Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València (Spain); Errandonea, D. [Departamento de Física Aplicada-ICMUV, MALTA Consolider Team, Universitat de València, Edificio de Investigación, C/Dr. Moliner 50, Burjassot, 46100 València (Spain); and others

    2014-01-15

    Highlights: • Single crystals of HgGa{sub 2}S{sub 4} with defect-chalcopyrite (DC) structure were synthesized. • High-pressure X-ray diffraction in DC-HgGa{sub 2}S{sub 4} was performed. • Equation of state of DC-HgGa{sub 2}S{sub 4} determined (bulk modulus of 48.4 GPa). • Calculated elastic constants of DC-HgGa{sub 2}S{sub 4} reported at different pressures. • DC-HgGa{sub 2}S{sub 4} becomes mechanically unstable above 13.8 GPa. -- Abstract: In this work, we focus on the study of the structural and elastic properties of mercury digallium sulfide (HgGa{sub 2}S{sub 4}) at high pressures. This compound belongs to the family of AB{sub 2}X{sub 4} ordered-vacancy compounds and exhibits a tetragonal defect chalcopyrite structure. X-ray diffraction measurements at room temperature have been performed under compression up to 15.1 GPa in a diamond anvil cell. Our measurements have been complemented and compared with ab initio total energy calculations. The axial compressibility and the equation of state of the low-pressure phase of HgGa{sub 2}S{sub 4} have been experimentally and theoretically determined and compared to other related ordered-vacancy compounds. The pressure dependence of the theoretical cation–anion and vacancy-anion distances and compressibilities in HgGa{sub 2}S{sub 4} are reported and discussed in comparison to other related ordered-vacancy compounds. Finally, the pressure dependence of the theoretical elastic constants and elastic moduli of HgGa{sub 2}S{sub 4} has been studied. Our calculations indicate that the low-pressure phase of HgGa{sub 2}S{sub 4} becomes mechanically unstable above 13.8 GPa.

  2. Characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe2 and related compounds

    International Nuclear Information System (INIS)

    Maeda, Tsuyoshi; Wada, Takahiro

    2009-01-01

    We studied characteristics of chemical bond and vacancy formation in chalcopyrite-type CuInSe 2 (CIS) by first principles calculations. The chalcopyrite-type CIS has two kinds of chemical bonds, Cu-Se and In-Se. The Cu-Se bond is a weak covalent bonding because electrons occupy both bonding and antibonding orbitals of Cu 3d and Se 4p and occupy only the bonding orbital (a 1 ) of Cu 4s and Se 4p and do not occupy the antibonding orbital (a 1 * ) of Cu 4s and Se 4p. On the other hand, the In-Se bond has a partially covalent and partially ionic character because the In 5s orbital covalently interacts with Se 4p; the In 5p orbital is higher than Se 4p and so the electron in the In 5p orbital moves to the Se 4p orbital. The average bond order of the Cu-Se and In-Se bonds can be calculated to be 1/4 and 1, respectively. The bond order of Cu-Se is smaller than that of In-Se. The characteristics of these two chemical bonds are related to the formation of Cu and In vacancies in CIS. The formation energy of the Cu vacancy is smaller than that of the In vacancy under both Cu-poor and In-poor conditions. The displacement (Δl) of the surrounding Se atoms after the formation of the Cu vacancy is smaller than the Δl after the formation of the In vacancy. The interesting and unique characteristics of CIS are discussed on the basis of the characteristics of the chemical bond. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Fundamentals of semiconductor lasers

    CERN Document Server

    Numai, Takahiro

    2015-01-01

    This book explains physics under the operating principles of semiconductor lasers in detail based on the experience of the author, dealing with the first manufacturing of phase-shifted DFB-LDs and recent research on transverse modes.   The book also bridges a wide gap between journal papers and textbooks, requiring only an undergraduate-level knowledge of electromagnetism and quantum mechanics, and helps readers to understand journal papers where definitions of some technical terms vary, depending on the paper. Two definitions of the photon density in the rate equations and two definitions of the phase-shift in the phase-shifted DFB-LD are explained, and differences in the calculated results are indicated, depending on the definitions.    Readers can understand the physics of semiconductor lasers and analytical tools for Fabry-Perot LDs, DFB-LDs, and VCSELs and will be stimulated to develop semiconductor lasers themselves.

  4. Coherent dynamics in semiconductors

    DEFF Research Database (Denmark)

    Hvam, Jørn Märcher

    1998-01-01

    enhanced in quantum confined lower-dimensional systems, where exciton and biexciton effects dominate the spectra even at room temperature. The coherent dynamics of excitons are at modest densities well described by the optical Bloch equations and a number of the dynamical effects known from atomic......Ultrafast nonlinear optical spectroscopy is used to study the coherent dynamics of optically excited electron-hole pairs in semiconductors. Coulomb interaction implies that the optical inter-band transitions are dominated, at least at low temperatures, by excitonic effects. They are further...... and molecular systems are found and studied in the exciton-biexciton system of semiconductors. At densities where strong exciton interactions, or many-body effects, become dominant, the semiconductor Bloch equations present a more rigorous treatment of the phenomena Ultrafast degenerate four-wave mixing is used...

  5. Hydrogen in semiconductors II

    CERN Document Server

    Nickel, Norbert H; Weber, Eicke R; Nickel, Norbert H

    1999-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition ...

  6. Photoelectronic properties of semiconductors

    CERN Document Server

    Bube, Richard H

    1992-01-01

    The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having fo...

  7. Construction of RGO/CdIn2S4/g-C3N4 ternary hybrid with enhanced photocatalytic activity for the degradation of tetracycline hydrochloride

    Science.gov (United States)

    Xiao, Peng; Jiang, Deli; Ju, Lixin; Jing, Junjie; Chen, Min

    2018-03-01

    Although RGO shows great advantage in promoting charge separation and transfer of semiconductor, construction of an efficient RGO-incorporated photocatalyst is still challenging. Herein, RGO was employed to construct novel RGO/CdIn2S4/g-C3N4 (donated as RGO/CIS/CN) ternary photocatalyst by a facile hydrothermal method for the degradation of tetracycline hydrochloride (TC). The RGO/CIS/CN ternary photocatalyst showed significantly enhanced photocatalytic activity towards the degradation of TC as compared to the binary CIS/CN, CIS/CN, and CN/RGO. The photoluminescence and photocurrent response results indicate that this enhanced photocatalytic activity can be mainly ascribed to the improved charge separation and transfer efficiency. Based on the radical trapping and electron spin resonance results, the superoxide radicals and holes are proposed to play an important role in the degradation of TC over RGO/CIS/CN ternary photocatalyst. This work paves new opportunities for the synthesis of RGO-incorporated ternary photocatalyst as an efficient photocatalyst for the degradation of organic contaminant.

  8. Research and development of photovoltaic power system. Optimization of bandgap of chalcopyrite semiconductors; Taiyoko hatsuden system no kenkyu kaihatsu. Kinseitaihaba no saitekika no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    Konagai, M [Tokyo Institute of Technology, Tokyo (Japan). Faculty of Engineering

    1994-12-01

    This paper reports the result obtained during fiscal 1994 on research on research on optimization of bandgap in thin film compound solar cells. In research on Cu(InGa)Se2 thin film solar cells by using a gas phase selenide making process, discussions were given on optimizing the following three processes: a process to raise temperature of a precursor film formed at a substrate temperature of about 150{degree}C, a selenide making process to perform annealing at about 500{degree}C, and a temperature reducing process. Good characteristics were obtained when selenium amount in the precursor is about 50%. In a bandgap control viewpoint, it was found that the conversion efficiency decreases rapidly when Ga composition is higher than 50%. A conversion efficiency of 14.9% was obtained to date at the Ga/(In+Ga) ratio of 0.4. In research on Cu(InGa)Se2 thin film solar cells by using a simultaneous deposition method, a conversion efficiency of 13.5% was obtained at a bandgap width of about 1.3 eV during research on manufacturing ZnO/CdS/Cu(InGa)Se2 thin film solar cells by using the simultaneous deposition method. Research has been carried out on manufacturing Cu(InGa)Se2 thin film solar cells using ZnSe interface layers. 8 figs.

  9. Advances in semiconductor lasers

    CERN Document Server

    Coleman, James J; Jagadish, Chennupati

    2012-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scien

  10. Superconductivity in doped semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bustarret, E., E-mail: Etienne.bustarret@neel.cnrs.fr

    2015-07-15

    A historical survey of the main normal and superconducting state properties of several semiconductors doped into superconductivity is proposed. This class of materials includes selenides, tellurides, oxides and column-IV semiconductors. Most of the experimental data point to a weak coupling pairing mechanism, probably phonon-mediated in the case of diamond, but probably not in the case of strontium titanate, these being the most intensively studied materials over the last decade. Despite promising theoretical predictions based on a conventional mechanism, the occurrence of critical temperatures significantly higher than 10 K has not been yet verified. However, the class provides an enticing playground for testing theories and devices alike.

  11. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  12. Compound semiconductor device physics

    CERN Document Server

    Tiwari, Sandip

    2013-01-01

    This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those inter

  13. Introductory semiconductor device physics

    CERN Document Server

    Parker, Greg

    2004-01-01

    ATOMS AND BONDINGThe Periodic TableIonic BondingCovalent BondingMetallic bondingvan der Waals BondingStart a DatabaseENERGY BANDS AND EFFECTIVE MASSSemiconductors, Insulators and MetalsSemiconductorsInsulatorsMetalsThe Concept of Effective MassCARRIER CONCENTRATIONS IN SEMICONDUCTORSDonors and AcceptorsFermi-LevelCarrier Concentration EquationsDonors and Acceptors Both PresentCONDUCTION IN SEMICONDUCTORSCarrier DriftCarrier MobilitySaturated Drift VelocityMobility Variation with TemperatureA Derivation of Ohm's LawDrift Current EquationsSemiconductor Band Diagrams with an Electric Field Presen

  14. Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

    Science.gov (United States)

    Collis, Ward J.; Abul-Fadl, Ali

    1988-01-01

    The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

  15. Tunable radiation emitting semiconductor device

    NARCIS (Netherlands)

    2009-01-01

    A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light

  16. Peculiarities of Gamma-Induced Optical Effects in Ternary Systems of Amorphous Chalcogenide Semiconductors

    Science.gov (United States)

    2001-06-01

    compactness and bonds concentration into the mechanism of RIOE must be taken into account using the parameter o ) [7]: o =C6, (2) where C- concentration of main...section, in contrast to As2S3-Ge2S3, the characters of ATmax(Z) and 8(Z) dependencies mismatch. 25 , 6 20 - - - 15 - 4 o 6 10 ) 2 --- At 5 -4-A 0...as well as by the origin of constituent chemical elements. Acknowledgement I would like to thank Professor 0. Shpotyuk for his encouragement and the

  17. Optical fingerprints of Y2 ordering in III–V ternary semiconductor alloys

    International Nuclear Information System (INIS)

    Chen, Dongguo; Ravindra, N M

    2013-01-01

    In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin–orbit splitting and band gap for Al x Ga 1−x As, Ga x In 1−x As, Ga x In 1−x P, GaAs x Sb 1−x and InP x Sb 1−x using first-principles calculations. These values and the valence band splittings E 12 , E 13 for these materials are provided as a function of the ordering parameter η. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data. (paper)

  18. Physical principles of semiconductor detectors

    International Nuclear Information System (INIS)

    Micek, S.L.

    1979-01-01

    The general properties of semiconductors with respect to the possibilities of their use as the ionization radiation detectors are discussed. Some chosen types of semiconductor junctions and their characteristics are briefly presented. There are also discussed the physical phenomena connected with the formation of barriers in various types of semiconductor counters. Finally, the basic properties of three main types of semiconductor detectors are given. (author)

  19. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  20. Handbook of luminescent semiconductor materials

    CERN Document Server

    Bergman, Leah

    2011-01-01

    Photoluminescence spectroscopy is an important approach for examining the optical interactions in semiconductors and optical devices with the goal of gaining insight into material properties. With contributions from researchers at the forefront of this field, Handbook of Luminescent Semiconductor Materials explores the use of this technique to study semiconductor materials in a variety of applications, including solid-state lighting, solar energy conversion, optical devices, and biological imaging. After introducing basic semiconductor theory and photoluminescence principles, the book focuses

  1. Facile Synthesis of Ternary Boron Carbonitride Nanotubes

    Directory of Open Access Journals (Sweden)

    Luo Lijie

    2009-01-01

    Full Text Available Abstract In this study, a novel and facile approach for the synthesis of ternary boron carbonitride (B–C–N nanotubes was reported. Growth occurred by heating simple starting materials of boron powder, zinc oxide powder, and ethanol absolute at 1150 °C under a mixture gas flow of nitrogen and hydrogen. As substrate, commercial stainless steel foil with a typical thickness of 0.05 mm played an additional role of catalyst during the growth of nanotubes. The nanotubes were characterized by SEM, TEM, EDX, and EELS. The results indicate that the synthesized B–C–N nanotubes exhibit a bamboo-like morphology and B, C, and N elements are homogeneously distributed in the nanotubes. A catalyzed vapor–liquid–solid (VLS mechanism was proposed for the growth of the nanotubes.

  2. Ternary particle yields in 249Cf(nth,f)

    Science.gov (United States)

    Tsekhanovich, I.; Büyükmumcu, Z.; Davi, M.; Denschlag, H. O.; Gönnenwein, F.; Boulyga, S. F.

    2003-03-01

    An experiment measuring ternary particle yields in 249Cf(nth,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37Si and 37S; their possible origin is discussed.

  3. Ternary particle yields in 249Cf(nth,f)

    International Nuclear Information System (INIS)

    Tsekhanovich, I.; Bueyuekmumcu, Z.; Davi, M.; Denschlag, H.O.; Goennenwein, F.; Boulyga, S.F.

    2003-01-01

    An experiment measuring ternary particle yields in 249 Cf(n th ,f) was carried out at the high flux reactor of the Institut Laue-Langevin using the Lohengrin recoil mass separator. Parameters of energy distributions were determined for 27 ternary particles up to 30 Mg and their yields were calculated. The yields of 17 further ternary particles were estimated on the basis of the systematics developed. The heaviest particles observed in the experiment are 37 Si and 37 S; their possible origin is discussed

  4. A Three-dimensional Topological Model of Ternary Phase Diagram

    International Nuclear Information System (INIS)

    Mu, Yingxue; Bao, Hong

    2017-01-01

    In order to obtain a visualization of the complex internal structure of ternary phase diagram, the paper realized a three-dimensional topology model of ternary phase diagram with the designed data structure and improved algorithm, under the guidance of relevant theories of computer graphics. The purpose of the model is mainly to analyze the relationship between each phase region of a ternary phase diagram. The model not only obtain isothermal section graph at any temperature, but also extract a particular phase region in which users are interested. (paper)

  5. Depletion field focusing in semiconductors

    NARCIS (Netherlands)

    Prins, M.W.J.; Gelder, Van A.P.

    1996-01-01

    We calculate the three-dimensional depletion field profile in a semiconductor, for a planar semiconductor material with a spatially varying potential upon the surface, and for a tip-shaped semiconductor with a constant surface potential. The nonuniform electric field gives rise to focusing or

  6. Nonlinear Elasticity of Doped Semiconductors

    Science.gov (United States)

    2017-02-01

    AFRL-RY-WP-TR-2016-0206 NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS Mark Dykman and Kirill Moskovtsev Michigan State University...2016 4. TITLE AND SUBTITLE NONLINEAR ELASTICITY OF DOPED SEMICONDUCTORS 5a. CONTRACT NUMBER FA8650-16-1-7600 5b. GRANT NUMBER 5c. PROGRAM...vibration amplitude. 15. SUBJECT TERMS semiconductors , microresonators, microelectromechanical 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF

  7. Semi-conductor rectifiers

    International Nuclear Information System (INIS)

    1981-01-01

    A method is described for treating a semiconductor rectifier, comprising: heating the rectifier to a temperature in the range of 100 0 C to 500 0 C, irradiating the rectifier while maintaining its temperature within the said range, and then annealing the rectifier at a temperature of between 280 0 C and 350 0 C for between two and ten hours. (author)

  8. Semiconductor detector physics

    International Nuclear Information System (INIS)

    Equer, B.

    1987-01-01

    Comprehension of semiconductor detectors follows comprehension of some elements of solid state physics. They are recalled here, limited to the necessary physical principles, that is to say the conductivity. P-n and MIS junctions are discussed in view of their use in detection. Material and structure (MOS, p-n, multilayer, ..) are also reviewed [fr

  9. Numerical study of the electronic structure, elastic and optical properties of defect quaternary semiconductor CuGaSnSe4

    Science.gov (United States)

    Shen, Kesheng; Lu, Hai; Zhang, Xianzhou; Jiao, Zhaoyong

    2018-06-01

    The electronic structure, elastic and optical properties of the defect quaternary semiconductor CuGaSnSe4 in I 4 bar structure are systematically investigated using first-principles calculations. We summarize and discuss some of the studies on CuGaSnSe4 in partially ordered chalcopyrite structure and find that there are three atomic arrangements so far, but it is still uncertain which is the most stable. Through detailed simulation and comparison with the corresponding literature, we get three models and predict that M1 model should be the most stable. The band structure and optical properties of compound CuGaSnSe4, including dielectric constant, refractive index and absorption spectrum, are drawn for a more intuitive understanding. The elastic constants are also calculated, which not only prove that CuGaSnSe4 in I 4 bar structure is stable naturally but also help solve the problem of no data to accurately predict axial thermal expansion coefficients. The calculated values of the zero frequency dielectric constant and refractive index are comparable to those of the corresponding chalcopyrite structure but slightly larger.

  10. Speeds of sound and isothermal compressibility of ternary liquid ...

    Indian Academy of Sciences (India)

    Thermo-acoustics Research Lab, Department of Chemistry, University of Allahabad,. Allahabad 211 002, India ... compressibility data of these industrially important organic compounds of ternary and higher liquid ... distillation. Densities and ...

  11. Kinetic study of lithium-cadmium ternary amalgam decomposition

    International Nuclear Information System (INIS)

    Cordova, M.H.; Andrade, C.E.

    1992-01-01

    The effect of metals, which form stable lithium phase in binary alloys, on the formation of intermetallic species in ternary amalgams and their effect on thermal decomposition in contact with water is analyzed. Cd is selected as ternary metal, based on general experimental selection criteria. Cd (Hg) binary amalgams are prepared by direct contact Cd-Hg, whereas Li is formed by electrolysis of Li OH aq using a liquid Cd (Hg) cathodic well. The decomposition kinetic of Li C(Hg) in contact with 0.6 M Li OH is studied in function of ageing and temperature, and these results are compared with the binary amalgam Li (Hg) decomposition. The decomposition rate is constant during one hour for binary and ternary systems. Ageing does not affect the binary systems but increases the decomposition activation energy of ternary systems. A reaction mechanism that considers an intermetallic specie participating in the activated complex is proposed and a kinetic law is suggested. (author)

  12. Ternary complex formation at mineral/solution interfaces

    International Nuclear Information System (INIS)

    Leckie, J.O.

    1995-01-01

    Adsorption of trace concentrations of radionuclides and heavy metals from aqueous solution is dependent on pH, absorbent and adsorbate concentration, and speciation of the metal in solution. In particular, complexation of metal ions by organic and inorganic ligands can dramatically alter adsorption behavior compared to ligand-free systems. The presence of complexing ligands can cause the formation of ''metal like'' or ''ligand like'' ternary surface complexes depending on whether adsorption of the ternary complex increases or decreases with increasing pH, respectively. Examples of ternary surface complexes behaving ''metal like'' include uranyl-EDTA surface complexes on goethite, neptunyl-EDTA surface complexes on hematite and neptunyl-humic surface complexes on gibbsite. Examples of ''ligand like'' ternary surface complexes include uranyl-carbonato and neptunyl-carbonato surface complexes on iron oxides. The effects of complex solutions and multimineralic systems are discussed. (authors). 39 refs., 16 figs., 8 tabs

  13. Positron annihilation lifetime study of interfaces in ternary polymer blends

    International Nuclear Information System (INIS)

    Meghala, D; Ramya, P; Pasang, T; Raj, J M; Ranganathaiah, C; Williams, J F

    2013-01-01

    A new method based on positron lifetime spectroscopy is developed to characterize individual interfaces in ternary polymer blends and hence determine the composition dependent miscibility level. The method owes its origin to the Kirkwood-Risemann-Zimm (KRZ) model for the evaluation of the hydrodynamic interaction parameters (α ij ) which was used successfully for a binary blend with a single interface. The model was revised for the present work for ternary polymer blends to account for three interfaces. The efficacy of this method is shown for two ternary blends namely poly(styrene-co-acrylonitrile)/poly (ethylene-co-vinylacetate)/poly(vinyl chloride) (SAN/EVA/PVC) and polycaprolactone /poly(styrene-co-acrylonitrile)/poly(vinyl chloride) (PCL/SAN/PVC) at different compositions. An effective hydrodynamic interaction parameter, α eff , was introduced to predict the overall miscibility of ternary blends.

  14. Analysis of polarized photoluminescence emission of ordered III–V semiconductor quaternary alloys

    Energy Technology Data Exchange (ETDEWEB)

    Prutskij, Tatiana, E-mail: tatiana.prutskij@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Makarov, Nykolay, E-mail: nykolay.makarov@correo.buap.mx [Instituto de Ciencias, BUAP, Privada 17 Norte, No 3417, Col. San Miguel Huyeotlipan, 72050 Puebla, Pue., México (Mexico); Attolini, Giovanni, E-mail: giovanni@imem.cnr.it [IMEM/CNR, Parco Area delle Scienze 37/A, 43010 Parma (Italy)

    2016-04-15

    Ternary and quaternary III–V alloys obtained by metal-organic vapor-phase epitaxy (MOVPE) grow very often with some degree of atomic ordering. Atomic ordering reduces the symmetry of the crystal lattice and thus drastically changes optical properties of the alloy. Moreover, the photoluminescence (PL) emission becomes polarized and its study helps to understand the atomic arrangement within the crystal lattice. In this work we experimentally studied the polarization of the PL emission from different crystallographic planes of several quaternary III–V semiconductor alloys grown on GaAs substrates by MOVPE. We compare the measured PL emission polarization angular patterns with those calculated with a model made for ternary alloys and discuss the limits of application of this model for quaternaries. It is found that the experimentally obtained polarization patterns are consistent with the existence of different ordering crystallographic planes for III- and for V-group atoms.

  15. Tricolore. A flexible color scale for ternary compositions

    DEFF Research Database (Denmark)

    2018-01-01

    tricolore is an R library providing a flexible color scale for the visualization of three-part/ternary compositions. Its main functionality is to color-code any ternary composition as a mixture of three primary colours and to draw a suitable color-key. tricolore flexibly adapts to different...... visualisation challenges via - discrete and continuous color support - support for unbalanced compositional data via centering - support for data with very narrow range via scaling - hue, chroma and lightness options...

  16. Analytical determination of distillation boundaries for ternary azeotropic systems

    OpenAIRE

    Marcilla Gomis, Antonio; Reyes Labarta, Juan Antonio; Velasco, Raúl; Serrano Cayuelas, María Dolores; Olaya López, María del Mar

    2009-01-01

    A new straight forward algorithm to calculate distillation boundaries in ternary azeotropic systems has been developed. The proposed method allows, using cubic splines, the calculation of distillation trajectories and the calculation of that corresponding to the searched distillation boundaries. The algorithm is applied to 4 ternary liquid-vapour systems to test its validity. Vicepresidency of Research (University of Alicante) and Generalitat Valenciana (GV/2007/125)

  17. Evidence for the existence of two electronic states in the chalcopyrite-type alloys CuFe(S1-zSez)2

    International Nuclear Information System (INIS)

    Jaimes, E.; Gonzalez, J.; Woolley, J.C.; Lamarche, G.

    1994-01-01

    Results of Moessbauer spectroscopy for the chalcopyrite-type of alloys CuFe(S 1-z Se z ) 2 in the range of composition 0 ≤ z ≤ 0.45 are presented. Room temperature spectra show two contributions: one is a magnetic spectrum (six lines) with a value of the hyperfine field near to that of chalcopyrite (z = 0, in which an antiferromagnetic order occurs below T = 823 K), the other having only one line. The relative area of the single-line contribution increases as z increases. For z = 0.2, we also made Moessbauer measurements as a function of temperature. The ratio of the two contributions evolves according to a Boltzmann law, in which the single line corresponds to the excited state at 81 K above the antiferromagnetic ground state. (orig.)

  18. Defect chalcopyrite Cu(In{sub 1-x}Ga{sub x}){sub 3}Se{sub 5} (0

    Energy Technology Data Exchange (ETDEWEB)

    Contreras, M.A.; Wiesner, H.; Niles, D.; Ramanathan, K.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)] [and others

    1996-05-01

    Crystallographic, optical, and electrical properties of defect chalcopyrite Cu(In{sub 1{minus}x}Ga{sub x}){sub 3}Se{sub 5} (0chalcopyrite CuIn{sub 1 {minus}x}Ga{sub x}Se{sub 2} absorber materials is presented. Considering the chalcopyrite/defect chalcopyrite junction model, the authors postulate that the traditionally poor device performance of uniform high-Ga-content absorbers (x>0.3) is due to a relatively inferior character - both structural and electrical - at the very chalcopyrite/defect chalcopyrite interface. They demonstrate that this situation can be circumvented (for absorbers with x>0.3) by properly engineering such an interface by reducing Ga content in the region near the surface of the absorber.

  19. Electronic structure of epitaxial chalcopyrite surfaces and interfaces for photovoltaics; Elektronische Struktur epitaktischer Chalkopyrite und deren Heterokontakte fuer die Photovoltaik

    Energy Technology Data Exchange (ETDEWEB)

    Hofmann, Andreas

    2012-02-14

    This thesis constitutes a comprehensive study of the surface physics of epitaxial CuInSe{sub 2} films. It comprises analyses of the surface morphology and reconstruction, electronic band structure as well as hetero-junctions relevant to photovoltaic applications. Therefore, especially the aspect of stoichiometry variation from the CuInSe{sub 2} to the copper-deficient defect phases was considered. Preparation and analysis was completely performed under ultra-high vacuum conditions in order to ensure the investigation of well-defined samples free of contaminants. For some of the analysis techniques, single-crystalline samples are indispensable: They allow for the determination of surface periodicity by low-energy electron diffraction (LEED). In combination with concentration depth profiling by angle-resolved x-ray photoemission, to types of surface reconstructions could be distinguished for the near-stoichiometric CuInSe{sub 2}(112) surface. In the copper-rich case, it is stabilized by Cu{sub In} anti-site defects and on the indium-rich side by 2 V{sub Cu} defects, as predicted by surface total energy calculations by Jaffe and Zunger. Both configurations correspond to a c(4 x 2) reconstruction of the zinc blende type (111) surface. For the defect compound CuIn{sub 3}Se{sub 5}, a sphalerite order of the surface was found, which points at a weakening or absence of the chalcopyrite order in the bulk of the material. The unusual stability of the (112) surface could also be proven by comparison with the reconstruction and surface order of (001) and (220) surfaces. The results from surface analysis were used to measure the valence band structure of the epitaxial samples by synchrotron-based angle-resolved photoelectron spectroscopy. The CuInSe{sub 2}(001) surface gives access to the high symmetry directions {Gamma}-T and {Gamma}-N of momentum space. By contrasting the data obtained for the stoichiometric surface with the copper-poor defect compound, a reduction of the

  20. Charge distribution in the ternary fragmentation of {sup 252}Cf

    Energy Technology Data Exchange (ETDEWEB)

    Senthil Kannan, M.T.; Balasubramaniam, M. [Bharathiar University, Department of Physics, Coimbatore (India)

    2017-08-15

    We present here, for the first time, a study on ternary fragmentation charge distribution of {sup 252}Cf using the convolution integral method and the statistical theory. The charge distribution for all possible charge combinations of a ternary breakup are grouped as a bin containing different mass partitions. Different bins corresponding to various third fragments with mass numbers from A{sub 3} = 16 to 84 are identified with the available experimental masses. The corresponding potential energy surfaces are calculated using the three cluster model for the two arrangements A{sub 1} + A{sub 2} + A{sub 3} and A{sub 1} + A{sub 3} + A{sub 2}. The ternary fragmentation yield values are calculated for the ternary combination from each bin possessing minimum potential energy. The yields of the resulting ternary combinations as a function of the charge numbers of the three fragments are analyzed for both the arrangements. The calculations are carried out at different excitation energies of the parent nucleus. For each excitation energy the temperature of the three fragments are iteratively computed conserving the total energy. The distribution of fragment temperatures corresponding to different excitation energies for some fixed third fragments are discussed. The presence of the closed shell nucleus Sn in the favourable ternary fragmentation is highlighted. (orig.)

  1. Impact of ternary blends of biodiesel on diesel engine performance

    Directory of Open Access Journals (Sweden)

    Prem Kumar

    2016-06-01

    Full Text Available The Pongamia and waste cooking oils are the main non edible oils for biodiesel production in India. The aim of the present work is to evaluate the fuel properties and investigate the impact on engine performance using Pongamia and waste cooking biodiesel and their ternary blend with diesel. The investigation of the fuel properties shows that Pongamia biodiesel and waste cooking biodiesel have poor cold flow property. This will lead to starting problem in the engine operation. To overcome this problem the ternary blends of diesel, waste cooking biodiesel and Pongamia biodiesel are prepared. The cloud and pour point for ternary blend, (WCB20:PB20:D60 were found to be 7 °C and 6.5 °C which are comparable to cloud and pour point of diesel 6 °C and 5 °C, respectively. The result of the test showed that brake specific fuel consumption for Pongamia biodiesel and waste cooking biodiesel is higher than ternary blend, (WCB20:PB20:D60 due to their lower energy content. The brake thermal efficiency of ternary blend and diesel is comparable while the Pongamia and waste cooking biodiesel have low efficiency. The result of investigation showed that ternary blend can be developed as alternate fuel.

  2. Uniform deposition of ternary chalcogenide nanoparticles onto mesoporous TiO{sub 2} film using liquid carbon dioxide-based coating

    Energy Technology Data Exchange (ETDEWEB)

    Nursanto, Eduardus Budi [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Park, Se Jin [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Jeon, Hyo Sang; Hwang, Yun Jeong [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Kim, Jaehoon, E-mail: jaehoonkim@skku.edu [School of Mechanical Engineering, Sungkyunkwan University, 2066, Seobu-Ro, Jangan-Gu, Suwon, GyeongGi-Do 440–746 (Korea, Republic of); SKKU Advanced Institute of Nano Technology (SAINT), 2066, Seobu-Ro, Jangan-Gu, Suwon, GyeongGi-Do 440–746 (Korea, Republic of); Min, Byoung Koun, E-mail: bkmin@kist.re.kr [Clean Energy Research Center, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 136–791 (Korea, Republic of); Department of Clean Energy and Chemical Engineering, Korea University of Science and Technology,217, Gajeong-ro, Yuseong-gu, Daejeon 305–333 (Korea, Republic of); Green School, Korea University, 145,Anam-ro, Seongbuk-gu, Seoul 136–713 (Korea, Republic of)

    2014-08-28

    We report the simultaneous deposition of two different metal precursors dissolved in liquid carbon dioxide (l-CO{sub 2}), aiming to the synthesis of ternary chalcopyrite (e.g. CuInS{sub 2}) nanoparticles on a mesoporous TiO{sub 2} film. The l-CO{sub 2}-based deposition of Cu and In precursors and subsequent reaction with a dilute H{sub 2}S gas resulted in Cu{sub x}In{sub y}S{sub z} nanoparticles uniformly deposited across the entire thickness of a mesoporous TiO{sub 2} film. Further heat treatment (air annealing and sulfurization) led to the formation of more stoichiometric CuInS{sub 2} nanoparticles. The formation of CuInS{sub 2} on TiO{sub 2} was confirmed by scanning electron microscopy, high resolution transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. The crystal growth of CuInS{sub 2} was also found to be controllable by adjusting the number of coating cycles of the l-CO{sub 2}-based deposition. - Highlights: • Simultaneous deposition of two different metal precursors dissolved in l-CO{sub 2}. • Uniform deposition of CuInS{sub 2} nanoparticles across mesoporous TiO{sub 2} film. • Highly crystalline CuInS{sub 2} formed on mesoporous TiO{sub 2} film. • Nearly stoichiometric ratio of Cu:In:S was obtained.

  3. Complete genome sequence of Acidihalobacter prosperus strain F5, an extremely acidophilic, iron- and sulfur-oxidizing halophile with potential industrial applicability in saline water bioleaching of chalcopyrite.

    Science.gov (United States)

    Khaleque, Himel N; Corbett, Melissa K; Ramsay, Joshua P; Kaksonen, Anna H; Boxall, Naomi J; Watkin, Elizabeth L J

    2017-11-20

    Successful process development for the bioleaching of mineral ores, particularly the refractory copper sulfide ore chalcopyrite, remains a challenge in regions where freshwater is scarce and source water contains high concentrations of chloride ion. In this study, a pure isolate of Acidihalobacter prosperus strain F5 was characterized for its ability to leach base metals from sulfide ores (pyrite, chalcopyrite and pentlandite) at increasing chloride ion concentrations. F5 successfully released base metals from ores including pyrite and pentlandite at up to 30gL -1 chloride ion and chalcopyrite up to 18gL -1 chloride ion. In order to understand the genetic mechanisms of tolerance to high acid, saline and heavy metal stress the genome of F5 was sequenced and analysed. As well as being the first strain of Ac. prosperus to be isolated from Australia it is also the first complete genome of the Ac. prosperus species to be sequenced. The F5 genome contains genes involved in the biosynthesis of compatible solutes and genes encoding monovalent cation/proton antiporters and heavy metal transporters which could explain its abilities to tolerate high salinity, acidity and heavy metal stress. Genome analysis also confirmed the presence of genes involved in copper tolerance. The study demonstrates the potential biotechnological applicability of Ac. prosperus strain F5 for saline water bioleaching of mineral ores. Copyright © 2017 Elsevier B.V. All rights reserved.

  4. Scientific communications: Re-Os sulfide (bornite, chalcopyrite, and pyrite) systematics of the carbonate-hosted copper deposits at ruby creek, southern brooks range, Alaska

    Science.gov (United States)

    Selby, D.; Kelley, K.D.; Hitzman, M.W.; Zieg, J.

    2009-01-01

    New Re-Os data for chalcopyrite, bornite, and pyrite from the carbonate-hosted Cu deposit at Ruby Creek (Bornite), Alaska, show extremely high Re abundances (hundreds of ppb, low ppm) and contain essentially no common Os. The Re-Os data provide the first absolute ages of ore formation for the carbonate-hosted Ruby Creek Cu-(Co) deposit and demonstrate that the Re-Os systematics of pyrite, chalcopyrite, and bornite are unaffected by greenschist metamorphism. The Re-Os data show that the main phase of Cu mineralization pre dominantly occurred at 384 ?? 4.2 Ma, with an earlier phase possibly at ???400 Ma. The Re-Os data are consistent with the observed paragenetic sequence and coincide with zircon U-Pb ages from igneous rocks within the Ambler metallogenic belt, some of which are spatially and genetically associated with regional volcanogenic massive sulfide deposits. The latter may suggest a temporal link between regional magmatism and hydrothermal mineralization in the Ambler district. The utility of bornite and chalcopyrite, in addition to pyrite, contributes to a new understanding of Re-Os geochronology and permits a refinement of the genetic model for the Ruby Creek deposit. ?? 2009 Society of Economices Geologists, Inc.

  5. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  6. Basic semiconductor physics

    CERN Document Server

    Hamaguchi, Chihiro

    2017-01-01

    This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The...

  7. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  8. Three dimensional strained semiconductors

    Science.gov (United States)

    Voss, Lars; Conway, Adam; Nikolic, Rebecca J.; Leao, Cedric Rocha; Shao, Qinghui

    2016-11-08

    In one embodiment, an apparatus includes a three dimensional structure comprising a semiconductor material, and at least one thin film in contact with at least one exterior surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the three dimensional structure. In another embodiment, a method includes forming a three dimensional structure comprising a semiconductor material, and depositing at least one thin film on at least one surface of the three dimensional structure for inducing a strain in the structure, the thin film being characterized as providing at least one of: an induced strain of at least 0.05%, and an induced strain in at least 5% of a volume of the structure.

  9. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  10. Optically coupled semiconductor device

    Energy Technology Data Exchange (ETDEWEB)

    Kumagaya, Naoki

    1988-11-18

    This invention concerns an optically coupled semiconductor device using the light as input signal and a MOS transistor for the output side in order to control on-off of the output side by the input signal which is insulated from the output. Concerning this sort of element, when a MOS transistor and a load resistance are planned to be accumulated on the same chip, a resistor and control of impurity concentration of the channel, etc. become necessary despite that the only formation of a simple P-N junction is enough, for a solar cell, hence cost reduction thereof cannot be done. In order to remove this defect, this invention offers an optically coupled semiconductor device featuring that two solar cells are connected in reverse parallel between the gate sources of the output MOS transistors and an operational light emitting element is individually set facing a respective solar cell. 4 figs.

  11. Maxwell-Stefan diffusion coefficient estimation for ternary systems: an ideal ternary alcohol system.

    Science.gov (United States)

    Allie-Ebrahim, Tariq; Zhu, Qingyu; Bräuer, Pierre; Moggridge, Geoff D; D'Agostino, Carmine

    2017-06-21

    The Maxwell-Stefan model is a popular diffusion model originally developed to model diffusion of gases, which can be considered thermodynamically ideal mixtures, although its application has been extended to model diffusion in non-ideal liquid mixtures as well. A drawback of the model is that it requires the Maxwell-Stefan diffusion coefficients, which are not based on measurable quantities but they have to be estimated. As a result, numerous estimation methods, such as the Darken model, have been proposed to estimate these diffusion coefficients. However, the Darken model was derived, and is only well defined, for binary systems. This model has been extended to ternary systems according to two proposed forms, one by R. Krishna and J. M. van Baten, Ind. Eng. Chem. Res., 2005, 44, 6939-6947 and the other by X. Liu, T. J. H. Vlugt and A. Bardow, Ind. Eng. Chem. Res., 2011, 50, 10350-10358. In this paper, the two forms have been analysed against the ideal ternary system of methanol/butan-1-ol/propan-1-ol and using experimental values of self-diffusion coefficients. In particular, using pulsed gradient stimulated echo nuclear magnetic resonance (PGSTE-NMR) we have measured the self-diffusion coefficients in various methanol/butan-1-ol/propan-1-ol mixtures. The experimental values of self-diffusion coefficients were then used as the input data required for the Darken model. The predictions of the two proposed multicomponent forms of this model were then compared to experimental values of mutual diffusion coefficients for the ideal alcohol ternary system. This experimental-based approach showed that the Liu's model gives better predictions compared to that of Krishna and van Baten, although it was only accurate to within 26%. Nonetheless, the multicomponent Darken model in conjunction with self-diffusion measurements from PGSTE-NMR represents an attractive method for a rapid estimation of mutual diffusion in multicomponent systems, especially when compared to exhaustive

  12. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  14. Muonium states in semiconductors

    International Nuclear Information System (INIS)

    Patterson, B.D.

    1987-01-01

    There is a brief summary of what is known about the muonium states isotropic, anisotropic and diamagnetic in diamond and zincblende semiconductors. The report deals with muonium spectroscopy, including the formation probabilities, hyperfine parameters and electronic g-factors of the states. The dynamics of the states is treated including a discussion of the transition from isotropic Mu to anisotropic Mu in diamond, temperature-dependent linewidthes in silicon and germanium and effects of daping and radiation damage

  15. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  16. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  18. Survey of semiconductor physics

    CERN Document Server

    Böer, Karl W

    1992-01-01

    Any book that covers a large variety of subjects and is written by one author lacks by necessity the depth provided by an expert in his or her own field of specialization. This book is no exception. It has been written with the encouragement of my students and colleagues, who felt that an extensive card file I had accumulated over the years of teaching solid state and semiconductor physics would be helpful to more than just a few of us. This file, updated from time to time, contained lecture notes and other entries that were useful in my research and permitted me to give to my students a broader spectrum of information than is available in typical textbooks. When assembling this material into a book, I divided the top­ ics into material dealing with the homogeneous semiconductor, the subject of the previously published Volume 1, and the inhomoge­ neous semiconductor, the subject of this Volume 2. In order to keep the book to a manageable size, sections of tutorial character which can be used as text for a g...

  19. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  20. The Physics of Semiconductors

    Science.gov (United States)

    Brennan, Kevin F.

    1999-02-01

    Modern fabrication techniques have made it possible to produce semiconductor devices whose dimensions are so small that quantum mechanical effects dominate their behavior. This book describes the key elements of quantum mechanics, statistical mechanics, and solid-state physics that are necessary in understanding these modern semiconductor devices. The author begins with a review of elementary quantum mechanics, and then describes more advanced topics, such as multiple quantum wells. He then disusses equilibrium and nonequilibrium statistical mechanics. Following this introduction, he provides a thorough treatment of solid-state physics, covering electron motion in periodic potentials, electron-phonon interaction, and recombination processes. The final four chapters deal exclusively with real devices, such as semiconductor lasers, photodiodes, flat panel displays, and MOSFETs. The book contains many homework exercises and is suitable as a textbook for electrical engineering, materials science, or physics students taking courses in solid-state device physics. It will also be a valuable reference for practicing engineers in optoelectronics and related areas.

  1. Composition Dependence of Surface Phonon Polariton Mode in Wurtzite InxGa1−xN (0 ≤ x ≤ 1) Ternary Alloy

    International Nuclear Information System (INIS)

    Ng, S. S.; Hassan, Z.; Hassan, H. Abu

    2008-01-01

    We present a theoretical study on the composition dependence of the surface phonon polariton (SPP) mode in wurtzite structure α-In x Ga 1-x N ternary alloy over the whole composition range. The SPP modes are obtained by the theoretical simulations by means of an anisotropy model. The results reveal that the SPP mode of α-In x Ga 1-x N semiconductors exhibits one-mode behaviour. From these data, composition dependence of the SPP mode with bowing parameter of −28.9 cm −1 is theoretically obtained

  2. Binary and ternary photofission of thorium 232

    Energy Technology Data Exchange (ETDEWEB)

    Titterton, E W; Brinkley, T A

    1950-05-01

    Work by Titterton and Goward (1949) has shown that uranium undergoes photofission into three charged fragments. Experiments have been conducted to determine whether a similar process takes place in the photofission of thorium. Some difficulties were encountered in loading plates with /sup 232/Th atoms, but this was finally accomplished by means of a technique described in detail. Plates loaded by this method were irradiated with a continuous spectrum of ..gamma.. rays of maximum energy 24 MeV from the (Atomic Energy Research Establishment) Synchrotron. Three irradiations, of 100, 150, and 180 r, were made and the resulting plates showed a fission density of 2.5 x 10/sup 4//cc at the 150 r level. In an examination involving 2500 binary photofissions, 5 cases of ternary fission involving the emission of a long range light fragment, probably an ..cap alpha..-particle, were observed. These events are described. A number-range curve was determined for the photofission tracks and is compared with a similar curve for tracks formed by the slow neutron fission of /sup 235/U in a D/sub 1/ emulsion under conditions of similar emulsion sensitivity. It appears that the energy release in the photofission of /sup 232/Th is smaller than that in the slow neutron fission of /sup 235/U. The data indicate that 124 MeV is the mean kinetic energy released in the photofission of /sup 232/Th.

  3. Anisotropy in the ternary cold fission

    CERN Document Server

    Delion, D S; Greiner, W

    2003-01-01

    We describe the spontaneous ternary cold fission of sup 2 sup 5 sup 2 Cf, accompanied by sup 4 He, sup 1 sup 0 Be and sup 1 sup 4 C within a stationary scattering formalism. We show that the light cluster should be born in the neck region. It decays from the first resonant eigenstate in the Coulomb plus harmonic oscillator potential, centred in this region and eccentric with respect to the symmetry axis. This description gives a simple answer to the question why the averaged values in the energy spectra of emitted clusters are close to each other, in spite of different Coulomb barriers. We have shown that the angular distribution of the emitted light particle is strongly connected with its deformation and the equatorial distance. Experimental angular distributions can be explained by the spherical shapes of emitted clusters, except for a deformed sup 1 sup 0 Be. We also predicted some dependences of half-lives for such tri-nuclear systems upon potential parameters.

  4. Impact on sediments and water by release of copper from chalcopyrite bearing rock due to acidic mine drainage

    Science.gov (United States)

    Shukla, Anoop Kant; Pradhan, Manoj; Tiwari, Onkar Nath

    2018-04-01

    Mining activity causes transition of rock-mass from its original position in earth into open environment. The action of environmental elements such air, water, microorganisms leads to oxidation of minerals which constitute the rock. The oxidation of sulphide minerals in presence of moisture releases acidic mine discharge (AMD). The acidic nature of AMD causes leaching of metals from rock minerals. Dissolution of other minerals may occur upon reaction with AMD. Chalcopyrite (CuFeS2) undergoes oxidation in acidic condition releasing copper among other products. This study reveals contamination of copper in sediment samples and seepage water from the tailing dam of a large copper project in located in central India. Elevation was studied using GIS to ascertain to the topographic elevation of tailing dam area. It was located at relatively high altitude causing seepage to flow away from tailing dam. The seepage water from tailing dam was found to be acidic with mean pH value of 4.0 and elevated copper content. Similarly, sediments from seepage water flow displayed elevated copper concentration. The copper concentration in seepage water was found with a mean value of 10.73 mg/l. The sediments from seepage water flow also displayed elevated copper concentration with mean value of 26.92 g/kg. This indicates impact on sediments by release of copper due to acidic mine drainage.

  5. In situ investigation of wet chemical processes for chalcopyrite solar cells by L-edge XAS under ambient conditions

    Energy Technology Data Exchange (ETDEWEB)

    Greil, Stefanie M. [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin (Germany); Lauermann, Iver, E-mail: Iver.lauermann@helmholtz-berlin.d [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin (Germany); Ennaoui, Ahmed; Kropp, Timo; Lange, Kathrin M.; Weber, Matthieu [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin (Germany); Aziz, Emad F., E-mail: Emad.Aziz@helmholtz-berlin.d [Helmholtz-Zentrum Berlin fuer Materialien und Energie, Albert-Einstein-Strasse 15, 12489 Berlin (Germany)

    2010-02-15

    Two instrumental setups for in situ soft X-ray absorption spectroscopy in liquid systems are demonstrated in this work. One for investigating chemical reactions in solutions and a new one for the solid component of a liquid / (as in both / absorber) solid interface. We used these setups for investigating two production processes for chalcopyrite solar cells under ambient conditions, probing the L-edge of Zn and Cu. The first one is a flow cell with a silicon nitride membrane to study the chemical bath deposition process for Cd-free buffer layers. Examining the electronic structure of involved Zn complexes allows to determine the exact reaction mechanism taking place during this process. The second setup is a rotating disk for investigating the bath/absorber interface upon the etching process of superficial binary copper compounds of the absorber as a function of time. The time resolution of the chemical reaction demonstrated in this study ranges from the second to minute time scale.

  6. In situ investigation of wet chemical processes for chalcopyrite solar cells by L-edge XAS under ambient conditions

    International Nuclear Information System (INIS)

    Greil, Stefanie M.; Lauermann, Iver; Ennaoui, Ahmed; Kropp, Timo; Lange, Kathrin M.; Weber, Matthieu; Aziz, Emad F.

    2010-01-01

    Two instrumental setups for in situ soft X-ray absorption spectroscopy in liquid systems are demonstrated in this work. One for investigating chemical reactions in solutions and a new one for the solid component of a liquid / (as in both / absorber) solid interface. We used these setups for investigating two production processes for chalcopyrite solar cells under ambient conditions, probing the L-edge of Zn and Cu. The first one is a flow cell with a silicon nitride membrane to study the chemical bath deposition process for Cd-free buffer layers. Examining the electronic structure of involved Zn complexes allows to determine the exact reaction mechanism taking place during this process. The second setup is a rotating disk for investigating the bath/absorber interface upon the etching process of superficial binary copper compounds of the absorber as a function of time. The time resolution of the chemical reaction demonstrated in this study ranges from the second to minute time scale.

  7. In situ investigation of wet chemical processes for chalcopyrite solar cells by L-edge XAS under ambient conditions

    Science.gov (United States)

    Greil, Stefanie M.; Lauermann, Iver; Ennaoui, Ahmed; Kropp, Timo; Lange, Kathrin M.; Weber, Matthieu; Aziz, Emad F.

    2010-02-01

    Two instrumental setups for in situ soft X-ray absorption spectroscopy in liquid systems are demonstrated in this work. One for investigating chemical reactions in solutions and a new one for the solid component of a liquid / (as in both / absorber) solid interface. We used these setups for investigating two production processes for chalcopyrite solar cells under ambient conditions, probing the L-edge of Zn and Cu. The first one is a flow cell with a silicon nitride membrane to study the chemical bath deposition process for Cd-free buffer layers. Examining the electronic structure of involved Zn complexes allows to determine the exact reaction mechanism taking place during this process. The second setup is a rotating disk for investigating the bath/absorber interface upon the etching process of superficial binary copper compounds of the absorber as a function of time. The time resolution of the chemical reaction demonstrated in this study ranges from the second to minute time scale.

  8. Peculiarities of thermoelectric half-Heusler phase formation in Zr–Co–Sb ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Romaka, V.V., E-mail: romakav@lp.edu.ua [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Romaka, L. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Rogl, P. [Institut für Physikalische Chemie, Universität Wien, Währingerstr. 42, A-1090 Wien (Austria); Stadnyk, Yu. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Melnychenko, N. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine); Army Academy named after Hetman Petro Sahaydachnyi, Gvardijska Str. 32, 79012 Lviv (Ukraine); Korzh, R.; Duriagina, Z. [Department of Applied Material Science and Materials Engineering, Lviv Polytechnic National University, Ustyyanovycha Str. 5, 79013 Lviv (Ukraine); Horyn, A. [Inorganic Chemistry Department, Ivan Franko Lviv National University, Kyryla and Mefodiya Str. 6, 79005 Lviv (Ukraine)

    2014-02-05

    Highlights: • Phase relations for the Zr–Co–Sb system at 500 °C. • Homogeneity region for half-Heusler phase. • The distribution of DOS for Zr{sub 1+x}Co{sub 1−x}Sb predicts transition from semiconductor (x = 0) to metallic (x = 0.13) like behavior. • The existence of the solid solution Zr{sub 5}Co{sub x}Sb{sub 3+y} (x = 0.0–1.0, y = 0.0–1.0). -- Abstract: The phase equilibria in the Zr–Co–Sb ternary system were studied at 873 K by means of X-ray and metallographic analyses in the whole concentration range. The interaction between the elements results the formation of four ternary compounds at investigated temperature: ZrCoSb (MgAgAs-type), Zr{sub 6}CoSb{sub 2} (K{sub 2}UF{sub 6}-type), Zr{sub 5}CoSb{sub 3} (Hf{sub 5}CuSn{sub 3}-type) and Zr{sub 5}Co{sub 0.5}Sb{sub 2.5} (W{sub 5}Si{sub 3}-type). The limited composition Zr{sub 5}CoSb{sub 3} of the solid solution based on the Zr{sub 5}Sb{sub 3−4} binaries is considered as compound with Hf{sub 5}CuSn{sub 3} structure type. The influence of the disordering and defects in the crystal structure of ZrCoSb on the physical properties was analyzed. The performed electronic structure calculations are in good agreement with electrical and magnetic studies.

  9. Electrodes for Semiconductor Gas Sensors

    Science.gov (United States)

    Lee, Sung Pil

    2017-01-01

    The electrodes of semiconductor gas sensors are important in characterizing sensors based on their sensitivity, selectivity, reversibility, response time, and long-term stability. The types and materials of electrodes used for semiconductor gas sensors are analyzed. In addition, the effect of interfacial zones and surface states of electrode–semiconductor interfaces on their characteristics is studied. This study describes that the gas interaction mechanism of the electrode–semiconductor interfaces should take into account the interfacial zone, surface states, image force, and tunneling effect. PMID:28346349

  10. Development of semiconductor electronics

    International Nuclear Information System (INIS)

    Bardeen, John.

    1977-01-01

    In 1931, Wilson applied Block's theory about the energy bands for the motion of electrons in a crystal lattice to semiconductors and showed that conduction can take place in two different ways, by electrons and by holes. Not long afterwards Frenkel showed that these carriers can flow by diffusion in a concentration gradient as well as under the influence of an electric field and wrote down equations for the current flow. The third major contribution, in the late 1930's was the explanation of rectification at a metalsemiconductor contact by Mott and more completely by Schottky. In late 1947 the first transistor of the point contact type was invented by Brattin, Shockley and Bardeen. Then after single crystals of Ge were grown, the junction transistor was developed by the same group. The first silicon transistors appeared in 1954. Then an important step was discovery of the planar transistor by Hoenri in 1960 which led to development of integrated circuits by 1962. Many transistors are produced by batch processing on a slice of silicon. Then in 1965 Mos (Metal-Oxide Semiconductor) transistor and in 1968 LSI (Large Scale Intergration circuits) were developed. Aside from electronic circuits, there are many other applications of semiconductors, including junction power rectifiers, junction luminescence (including lasers), solar batteries, radiation detectors, microwave oscillators and charged-coupled devices for computer memories and devices. One of the latest developments is a microprocessor with thousands of transistors and associated circuitry on a single small chip of silicon. It can be programmed to provide a variety of circuit functions, thus it is not necessary to go through the great expense of LSI's for each desired function, but to use standard microprocessors and program to do the job

  11. Constitution of the ternary system Cr–Ni–Ti

    International Nuclear Information System (INIS)

    Krendelsberger, Natalja; Weitzer, Franz; Du, Yong; Schuster, Julius C.

    2013-01-01

    Highlights: •Reaction scheme and liquidus surface for Cr-Ni-Ti are given. •In the ternary the C14-type Laves phase coexists with the liquid phase. •Two ternary eutectics are identified. -- Abstract: The nature of solid–liquid phase equilibria in the ternary system Cr–Ni–Ti was investigated using electron microscopy, energy dispersive spectroscopy, X-ray diffraction, and differential thermal analysis. Literature data on solid state phase equilibria are confirmed. The Cr 2 Ti Laves phase modifications coexisting with Ni–Ti phases are clarified to be hexagonal C14-type and cubic C15-type. The C14-type Laves phase γCr 2 Ti is found to coexist with the liquid phase. It forms in the pseudobinary peritectic reaction p max1 from L + β(Cr,Ti) at 1389 °C. On further cooling γCr 2 Ti + NiTi solidify at 1202 °C in the pseudobinary eutectic e max2 . In the Cr-rich part of the system ternary eutectics occur at 1216 °C (E 1 : L = Ni 3 Ti + (Ni) + β(Cr,Ti)) and 1100 °C (E 2 : L = NiTi + Ni 3 Ti + β(Cr,Ti)), respectively. No ternary eutectic is found in the Ti-rich part. Rather the eutectic trough ends in the binary eutectic L = NiTi 2 + β(Ti)

  12. Ternary fission of spontaneously fissile uranium isomers excited by neutrons

    International Nuclear Information System (INIS)

    Makarenko, V.E.; Molchanov, Y.D.; Otroshchenko, G.A.; Yan'kov, G.B.

    1989-01-01

    Spontaneously fissile isomers (SFI) of uranium were excited in the reactions 236,238 U(n,n') at an average neutron energy 4.5 MeV. A pulsed electrostatic accelerator and time analysis of the fission events were used. Fission fragments were detected by the scintillation method, and long-range particles from fission were detected by an ionization method. The relative probability of fission of nuclei through a spontaneously fissile isomeric state was measured: (1.30±0.01)·10 -4 ( 236 U) and (1.48±0.02)·10 -4 ( 238 U). Half-lives of the isomers were determined: 121±2 nsec (the SFI 236 U) and 267±13 nsec (the SFI 238 U). In study of the ternary fission of spontaneously fissile isotopes of uranium it was established that the probability of the process amounts to one ternary fission per 163±44 binary fissions of the SFI 236 U and one ternary fission per 49±14 binary fissions of the SFI 238 U. The substantial increase of the probability of ternary fission of SFI of uranium in comparison with the case of ternary fission of nuclei which are not in an isomeric state may be related to a special nucleon configuration of the fissile isomers of uranium

  13. Layered semiconductor neutron detectors

    Science.gov (United States)

    Mao, Samuel S; Perry, Dale L

    2013-12-10

    Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy .alpha.-particles or .gamma.-photons generated by neutron interaction.

  14. Basic properties of semiconductors

    CERN Document Server

    Landsberg, PT

    2013-01-01

    Since Volume 1 was published in 1982, the centres of interest in the basic physics of semiconductors have shifted. Volume 1 was called Band Theory and Transport Properties in the first edition, but the subject has broadened to such an extent that Basic Properties is now a more suitable title. Seven chapters have been rewritten by the original authors. However, twelve chapters are essentially new, with the bulk of this work being devoted to important current topics which give this volume an almost encyclopaedic form. The first three chapters discuss various aspects of modern band theory and the

  15. Electrowetting on semiconductors

    Science.gov (United States)

    Palma, Cesar; Deegan, Robert

    2015-01-01

    Applying a voltage difference between a conductor and a sessile droplet sitting on a thin dielectric film separating it from the conductor will cause the drop to spread. When the conductor is a good metal, the change of the drop's contact angle due to the voltage is given by the Young-Lippmann (YL) equation. Here, we report experiments with lightly doped, single crystal silicon as the conductive electrode. We derive a modified YL equation that includes effects due to the semiconductor and contact line pinning. We show that light induces a non-reversible wetting transition, and that our model agrees well with our experimental results.

  16. Semiconductor ionizino. radiation detectors

    International Nuclear Information System (INIS)

    1982-01-01

    Spectrometric semiconductor detectors of ionizing radiation with the electron-hole junction, based on silicon and germanium are presented. The following parameters are given for the individual types of germanium detectors: energy range of detected radiation, energy resolution given as full width at half maximum (FWHM) and full width at one tenth of maximum (FWTM) for 57 Co and 60 Co, detection sensitivity, optimal voltage, and electric capacitance at optimal voltage. For silicon detectors the value of FWHM for 239 Pu is given, the sensitive area and the depth of the sensitive area. (E.S.)

  17. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  18. Ternary systems Sr-{Ni,Cu}-Si: Phase equilibria and crystal structure of ternary phases

    International Nuclear Information System (INIS)

    Nasir, Navida; Melnychenko-Koblyuk, Nataliya; Grytsiv, Andriy; Rogl, Peter; Giester, Gerald; Wosik, Jaroslaw; Nauer, Gerhard E.

    2010-01-01

    Phase relations were established in the Sr-poor part of the ternary systems Sr-Ni-Si (900 deg. C) and Sr-Cu-Si (800 deg. C) by light optical microscopy, electron probe microanalysis and X-ray diffraction on as cast and annealed alloys. Two new ternary compounds SrNiSi 3 (BaNiSn 3 -type) and SrNi 9-x Si 4+x (own-type) were found in the Sr-Ni-Si system along with previously reported Sr(Ni x Si 1-x ) 2 (AlB 2 -type). The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type. At higher Si-content X-ray Rietveld refinements reveal the formation of a vacant site (□) corresponding to a formula SrNi 5.5 Si 6.5 □ 1.0 . Phase equilibria in the Sr-Cu-Si system are characterized by the compounds SrCu 2-x Si 2+x (ThCr 2 Si 2 -type), Sr(Cu x Si 1-x ) 2 (AlB 2 -type), SrCu 9-x Si 4+x (0≤x≤1.0; CeNi 8.5 Si 4.5 -type) and SrCu 13-x Si x (4≤x≤1.8; NaZn 13 -type). The latter two structure types appear within a continuous solid solution. Neither a type-I nor a type-IX clathrate compound was encountered in the Sr-{Cu,Ni}-Si systems. Structural details are furthermore given for about 14 new ternary compounds from related alloy systems with Ba. - Graphical abstract: The crystal structure of SrNi 9-x Si 4+x (own-type, x=2.7, a=0.78998(3), c=1.1337(2) nm; space group P4/nbm) was determined from X-ray single crystal counter to be a low symmetry derivative of the cubic, parent NaZn 13 -type and is related to CeNi 8.5 Si 4.5 -type.

  19. Theoretical investigation of the structural stabilities, optoelectronic properties and thermodynamic characteristics of GaPxSb1-x ternary alloys

    Science.gov (United States)

    Oumelaz, F.; Nemiri, O.; Boumaza, A.; Ghemid, S.; Meradji, H.; Bin Omran, S.; El Haj Hassan, F.; Rai, D. P.; Khenata, R.

    2018-06-01

    In this theoretical study, we have investigated the structural, phase transition, electronic, thermodynamic and optical properties of GaPxSb1-x ternary alloys. Our calculations are performed with the WIEN2k code based on density functional theory using the full-potential linearized augmented plane wave method. For the electron exchange-correlation potential, a generalized gradient approximation within Wu-Cohen scheme is considered. The recently developed Tran-Blaha modified Becke-Johnson potential has also been used to improve the underestimated band gap. The structural properties, including the lattice constants, the bulk moduli and their pressure derivatives are in very good agreement with the available experimental data and theoretical results. Several structural phase transitions were studied here to establish the stable structure and to predict the phase transition under hydrostatic pressure. The computed transition pressure (Pt) of the material of our interest from the zinc blende (B3) to the rock salt (B1) phase has been determined and found to agree well with the experimental and theoretical data. The calculated band structure shows that GaSb binary compound and the ternary alloys are direct band gap semiconductors. Optical parameters such as the dielectric constants and the refractive indices are calculated and analyzed. The thermodynamic results are also interpreted and analyzed.

  20. Wavelength modulation spectroscopy of semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kohn, S.E.

    1977-10-01

    The use of modulation spectroscopy to study the electronic properties of solids has been very productive. The construction of a wide range Wavelength Modulation Spectrometer to study the optical properties of solids is described in detail. Extensions of the working range of the spectrometer into the vacuum ultraviolet are discussed. Measurements of the reflectivity and derivative reflectivity spectra of the lead chalcogenides, the chalcopyrite ZnGeP/sub 2/, the layer compounds GaSe and GaS and their alloys, the ferroelectric SbSI, layer compounds SnS/sub 2/ and SnSe/sub 2/, and HfS/sub 2/ were made. The results of these measurements are presented along with their interpretation in terms of band structure calculations.

  1. Single filament semiconductor laser

    International Nuclear Information System (INIS)

    Botez, D.

    1980-01-01

    A semiconductor laser comprising: a body of semiconductor material including a substrate having a surface and a pair of spaced, substantially parallel dove-tailed shaped grooves in said surface, said body having a pair of end surfaces between which said grooves extend, said end surfaces being reflective to light with at least one of said end surfaces being partially transparent to light a first epitaxial layer over said surface of the substrate and the surfaces of the grooves, said first epitaxial layer having a flat surface portion over the portion of the substrate surface between the grooves, a thin second epitaxial layer over said first epitaxial layer, a third epitaxial layer over said second epitaxial layer, said first and third epitaxial layers being of opposite conductivity types and the second epitaxial layer being the active recombination region of the laser with the light being generated therein in the vicinity of the portion which is over the flat surface portion of the first epitaxial layer, and a pair of contacts on said body with one contact being over said third epitaxial body and the other being on said substrate

  2. Model for competitive binary and ternary ion-molecule reactions

    International Nuclear Information System (INIS)

    Herbst, E.

    1985-01-01

    A mechanism by which competitive binary and ternary ion-molecule reactions can occur is proposed. Calculations are undertaken for the specific system CH3(+) + NH3 + He which has been studied in the laboratory by Smith and Adams (1978), and the potential surface of which has been studied theoretically by Nobes and Radom (1983). It is shown that a potential-energy barrier in the exit channel prevents the rapid dissociation of collision complexes with large amounts of angular momentum and thereby allows collisional stabilization of the complexes. The calculated ternary-reaction rate coefficient is in good agreement with the experimental value, but a plot of the effective two-body rate coefficient of the ternary channel vs helium density does not quite show the observed saturation. 21 references

  3. Collective and tracer diffusion kinetics in the ternary random alloy

    International Nuclear Information System (INIS)

    Belova, I.V.; Murch, G.E.; Allnatt, A.R.

    2002-01-01

    In this study, collective and tracer diffusion kinetics is addressed for the ternary random alloy. A formal solution from the self-consistent theory of Moleko et al (Moleko L K, Allnatt A R and Allnatt E L 1989 Phil. Mag. A 59 141) is derived for collective diffusion and compared with the corresponding solution for the binary random alloy. Tracer diffusion in the ternary alloy is treated from the perspective of a special case of the quaternary random alloy. Results from Monte Carlo calculations for tracer and collective correlation factors (for the bcc ternary random alloy) are found to be in excellent agreement with this self-consistent theory but in only semi-quantitative agreement with the earlier theory of Manning (Manning J R 1971 Phys. Rev. B 4 1111). (author)

  4. Constitutional studies of the molybdenum-ruthenium-palladium ternary system

    International Nuclear Information System (INIS)

    Cornish, L.A.; Pratt, J.N.

    1997-01-01

    An experimental and computational study has been made of phase equilibria in the Mo-Ru-Pd ternary system. The constitution of annealed binary and ternary alloys was investigated using optical and electron microscopy, X-ray diffraction and SEM phase analysis techniques. Limited thermodynamic measurements were made using the ZrO 2 solid electrolyte e.m.f. method. The data obtained from the various techniques were used to construct a ternary isothermal section at 1473 K. The experimentally determined section is compared with a calculated section for the same temperature, computed using thermodynamic coefficients derived solely from binary system information. Lattice parameters are reported for the b.c.c., f.c.c. and c.p.h. solid solutions and for the σ phase. (orig.)

  5. Thermal decomposition of cesium-ethylene-ternary graphite intercalation compounds

    International Nuclear Information System (INIS)

    Matsumoto, R.; Oishi, Y.; Arii, T.

    2010-01-01

    In this paper, the thermal decomposition of air-stable Cs-ethylene-ternary graphite intercalation compounds (GICs) is discussed. The air stability of Cs-GICs is improved remarkably after the absorption of ethylene into their interlayer nanospace, because the ethylene molecules oligomerize and block the movement of Cs atoms. In addition, the evaporation of Cs atoms from the Cs-ethylene-ternary GICs is observed above 400 o C under a N 2 atmosphere of 100 Pa by ion attachment mass spectrometry. Although the results indicate that Cs-ethylene-ternary GICs remain stable up to approximately 400 o C, their thermal stability is not very high as compared to that of Cs-GICs.

  6. α-ternary decay of Cf isotopes, statistical model

    International Nuclear Information System (INIS)

    Joseph, Jayesh George; Santhosh, K.P.

    2017-01-01

    The process of splitting a heavier nucleus to three simultaneous fragments is termed as ternary fission and compared to usual binary fission, it is a rare process. Depending on the nature of third particle either it is called light charged particle (LCP) accompanying fission if it is light or true ternary fission if all three fragments have nearly same mass distributions. After experimental observations in early seventies, initially with a slow pace, now theoretical studies in ternary fission has turned to a hot topic in nuclear decay studies especially in past one decade. Mean while various models have been developed, existing being modified and seeking for new with a hope that it can beam a little more light to the profound nature of nuclear interaction. In this study a statistical method, level density formulation, has been employed

  7. Completed Local Ternary Pattern for Rotation Invariant Texture Classification

    Directory of Open Access Journals (Sweden)

    Taha H. Rassem

    2014-01-01

    Full Text Available Despite the fact that the two texture descriptors, the completed modeling of Local Binary Pattern (CLBP and the Completed Local Binary Count (CLBC, have achieved a remarkable accuracy for invariant rotation texture classification, they inherit some Local Binary Pattern (LBP drawbacks. The LBP is sensitive to noise, and different patterns of LBP may be classified into the same class that reduces its discriminating property. Although, the Local Ternary Pattern (LTP is proposed to be more robust to noise than LBP, however, the latter’s weakness may appear with the LTP as well as with LBP. In this paper, a novel completed modeling of the Local Ternary Pattern (LTP operator is proposed to overcome both LBP drawbacks, and an associated completed Local Ternary Pattern (CLTP scheme is developed for rotation invariant texture classification. The experimental results using four different texture databases show that the proposed CLTP achieved an impressive classification accuracy as compared to the CLBP and CLBC descriptors.

  8. The partially alternating ternary sum in an associative dialgebra

    International Nuclear Information System (INIS)

    Bremner, Murray R; Sanchez-Ortega, Juana

    2010-01-01

    The alternating ternary sum in an associative algebra, abc - acb - bac + bca + cab - cba, gives rise to the partially alternating ternary sum in an associative dialgebra with products dashv and vdash by making the argument a the center of each term. We use computer algebra to determine the polynomial identities in degree ≤9 satisfied by this new trilinear operation. In degrees 3 and 5, these identities define a new variety of partially alternating ternary algebras. We show that there is a 49-dimensional space of multilinear identities in degree 7, and we find equivalent nonlinear identities. We use the representation theory of the symmetric group to show that there are no new identities in degree 9.

  9. New ternary hydride formation in U-Ti-H system

    International Nuclear Information System (INIS)

    Yamamoto, Takuya; Kayano, Hideo; Yamawaki, Michio.

    1991-01-01

    Hydrogen absorption properties of two titanium-rich uranium alloys, UTi 2 and UTi 4 , were studied in order to prepare and identify the recently found ternary hydride. They slowly reacted with hydrogen of the initial pressure of 10 5 Pa at 873K to form the ternary hydride. The hydrogenated specimen mainly consisted of the pursued ternary hydride but contained also U(or UO 2 ), TiH x , and some transient phases. X-ray powder diffraction and Electron Probe Micro Analysis proved that it was the UTi 2 H x with the expected MgCu 2 structure, though all the X-ray peaks were broad probably because of inhomogeneity. This compound had extremely high resistance to powdering on its formation, which showed high potential utilities for a non-powdering tritium storage system or for other purposes. (author)

  10. Nuclear Electrical and Optical Studies of Hydrogen in Semiconductors.

    CERN Multimedia

    Dietrich, M; Toulemonde, M

    2002-01-01

    During the last years, the understanding of H and its interaction with dopant atoms in Si, Ge and III-V semiconductors has improved considerably concerning the stability of the formed complexes their structural arrangements, and the implications of this interaction on the electrical properties of the semiconductors " passivation " The perturbed angular correlation technique (PAC) has contributed to the understanding of this phenomena on an atomistic scale using radioactive isotopes provided by ISOLDE. \\\\ \\\\The aim of the proposed experiments is twofold: \\\\ \\\\\\begin{enumerate} \\item The H passivation mechanism of acceptors in GaN and ternary III-V compounds (AlGaAs, GaInP, AlGaN) shall be investigated, using the PAC probe atom $^{111m}$Cd as a 'representative' of group II-B metal acceptors. The problems addressed in these technological important systems are microscopic structure, formation and stability of the hydrogen correlated complexes as function of doping and stoichiometry (i.e. the size of the band gap)...

  11. Ion channeling study of defects in multicomponent semiconductor compounds

    International Nuclear Information System (INIS)

    Turos, A.; Nowicki, L.; Stonert, A.

    2002-01-01

    Compound semiconductor crystals are of great technological importance as basic materials for production of modern opto- and microelectronic devices. Ion implantation is one of the principal techniques for heterostructures processing. This paper reports the results of the study of defect formation and transformation in binary and ternary semiconductor compounds subjected to ion implantation with ions of different mass and energy. The principal analytical technique was He-ion channeling. The following materials were studied: GaN and InGaN epitaxial layers. First the semi empirical method of channeling spectra analysis for ion implanted multicomponent single crystal was developed. This method was later complemented by the more sophisticated method based on the Monte Carlo simulation of channeling spectra. Next, the damage buildup in different crystals and epitaxial layers as a function of the implantation dose was studied for N, Mg, Te, and Kr ions. The influence of the substrate temperature on the defect transformations was studied for GaN epitaxial layers implanted with Mg ions. Special attention was devoted to the study of growth conditions of InGaN/GaN/sapphire heterostructures, which are important component of the future blue laser diodes. In-atom segregation and tetragonal distortion of the epitaxial layer were observed and characterized. Next problem studied was the incorporation of hydrogen atoms in GaAs and GaN. Elastic recoil detection (ERDA) and nuclear reaction analysis (NRA) were applied for the purpose. (author)

  12. Equilibrium phase diagram of the Ag-Au-Pb ternary system

    International Nuclear Information System (INIS)

    Hassam, S.; Bahari, Z.

    2005-01-01

    The phase diagram of the ternary system Ag-Au-Pb has been established using differential thermal analysis and X-ray powder diffraction analysis. Four vertical sections were studied: X Pb = 0.40, X Au /X Pb = 1/3, X Ag /X Au = 4/1 and X Ag /X Au = 1/1. Two ternary transitory peritectics and one ternary eutectic were characterized. A schematic representation of the ternary equilibria is given

  13. II-VI semiconductor compounds

    CERN Document Server

    1993-01-01

    For condensed matter physicists and electronic engineers, this volume deals with aspects of II-VI semiconductor compounds. Areas covered include devices and applications of II-VI compounds; Co-based II-IV semi-magnetic semiconductors; and electronic structure of strained II-VI superlattices.

  14. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  15. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  16. Semiconductor photocatalysis principles and applications

    CERN Document Server

    Kisch, Horst

    2014-01-01

    Focusing on the basic principles of semiconductor photocatalysis, this book also gives a brief introduction to photochemistry, photoelectrochemistry, and homogeneous photocatalysis. In addition, the author - one of the leading authorities in the field - presents important environmental and practical aspects. A valuable, one-stop source for all chemists, material scientists, and physicists working in this area, as well as novice researchers entering semiconductor photocatalysis.

  17. Progress in semiconductor drift detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Walton, J.; Gatti, E.

    1985-01-01

    Progress in testing semiconductor drift detectors is reported. Generally better position and energy resolutions were obtained than resolutions published previously. The improvement is mostly due to new electronics better matched to different detectors. It is shown that semiconductor drift detectors are becoming versatile and reliable detectors for position and energy measurements

  18. Semiconductor materials and their properties

    NARCIS (Netherlands)

    Reinders, Angelina H.M.E.; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre; Reinders, Angele; Verlinden, Pierre; van Sark, Wilfried; Freundlich, Alexandre

    2017-01-01

    Semiconductor materials are the basic materials which are used in photovoltaic (PV) devices. This chapter introduces solid-state physics and semiconductor properties that are relevant to photovoltaics without spending too much time on unnecessary information. Usually atoms in the group of

  19. Optical coherent control in semiconductors

    DEFF Research Database (Denmark)

    Østergaard, John Erland; Vadim, Lyssenko; Hvam, Jørn Märcher

    2001-01-01

    of quantum control including the recent applications to semiconductors and nanostructures. We study the influence of inhomogeneous broadening in semiconductors on CC results. Photoluminescence (PL) and the coherent emission in four-wave mixing (FWM) is recorded after resonant excitation with phase...

  20. Terahertz Nonlinear Optics in Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hvam, Jørn Märcher; Hoffmann, Matthias C.

    2013-01-01

    We demonstrate the nonlinear optical effects – selfphase modulation and saturable absorption of a single-cycle THz pulse in a semiconductor. Resulting from THz-induced modulation of Drude plasma, these nonlinear optical effects, in particular, lead to self-shortening and nonlinear spectral...... breathing of a single-cycle THz pulse in a semiconductor....

  1. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  2. Adiabatic pipelining: a key to ternary computing with quantum dots

    Science.gov (United States)

    Pečar, P.; Ramšak, A.; Zimic, N.; Mraz, M.; Lebar Bajec, I.

    2008-12-01

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  3. Adiabatic pipelining: a key to ternary computing with quantum dots

    International Nuclear Information System (INIS)

    Pecar, P; Zimic, N; Mraz, M; Lebar Bajec, I; Ramsak, A

    2008-01-01

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  4. Adiabatic pipelining: a key to ternary computing with quantum dots.

    Science.gov (United States)

    Pečar, P; Ramšak, A; Zimic, N; Mraz, M; Lebar Bajec, I

    2008-12-10

    The quantum-dot cellular automaton (QCA), a processing platform based on interacting quantum dots, was introduced by Lent in the mid-1990s. What followed was an exhilarating period with the development of the line, the functionally complete set of logic functions, as well as more complex processing structures, however all in the realm of binary logic. Regardless of these achievements, it has to be acknowledged that the use of binary logic is in computing systems mainly the end result of the technological limitations, which the designers had to cope with in the early days of their design. The first advancement of QCAs to multi-valued (ternary) processing was performed by Lebar Bajec et al, with the argument that processing platforms of the future should not disregard the clear advantages of multi-valued logic. Some of the elementary ternary QCAs, necessary for the construction of more complex processing entities, however, lead to a remarkable increase in size when compared to their binary counterparts. This somewhat negates the advantages gained by entering the ternary computing domain. As it turned out, even the binary QCA had its initial hiccups, which have been solved by the introduction of adiabatic switching and the application of adiabatic pipeline approaches. We present here a study that introduces adiabatic switching into the ternary QCA and employs the adiabatic pipeline approach to successfully solve the issues of elementary ternary QCAs. What is more, the ternary QCAs presented here are sizewise comparable to binary QCAs. This in our view might serve towards their faster adoption.

  5. Structural, elastic, electronic, bonding, and optical properties of BeAZ2 (A = Si, Ge, Sn; Z = P, As) chalcopyrites

    International Nuclear Information System (INIS)

    Fahad, Shah; Murtaza, G.; Ouahrani, T.; Khenata, R.; Yousaf, Masood; Omran, S.Bin; Mohammad, Saleh

    2015-01-01

    A first principles density functional theory (DFT) technique is used to study the structural, chemical bonding, electronic and optical properties of BeAZ 2 (A = Si, Ge, Sn; Z = P, As) chalcopyrite materials. The calculated parameters are in good agreement with the available experimental results. The lattice constants and the equilibrium volume increased as we moved from Si to Ge to Sn, whereas the c/a and internal parameters u decreased by shifting the cation from P to As. These compounds are elastically stable. An investigation of the band gap using the WC-GGA, EV-GGA, PBE-GGA and mBJ-metaGGA potentials suggested that BeSiP 2 and BeSiAs 2 are direct band gap compounds, whereas BeGeP 2, BeGeAs 2, BeSnP 2, BeSnAs 2 are indirect band gap compounds. The energy band gaps decreased by changing B from Si to Sn and increased by changing the anion C from P to As. The bonding among the cations and anions is primarily ionic. In the optical properties, the real and imaginary parts of the dielectric functions, reflectivity and optical conductivity have been studied over a wide energy range. - Highlights: • The compounds are studied by FP-LAPW method within mBJ approximation. • All of the studied materials show isotropic behaviour. • All the compounds show direct band gap nature. • Bonding nature is mostly covalent among the studied compounds. • High absorption peaks and reflectivity ensures there utility in optoelectronic devices

  6. Novel ternary g-C3N4/Ag3VO4/AgBr nanocomposites with excellent visible-light-driven photocatalytic performance for environmental applications

    Science.gov (United States)

    Barzegar, Javid; Habibi-Yangjeh, Aziz; Akhundi, Anise; Vadivel, S.

    2018-04-01

    Novel visible-light-induced photocatalysts were fabricated by integration of Ag3VO4 and AgBr semiconductors with graphitic carbon nitride (g-C3N4) through a facile refluxing method. The fabricated photocatalysts were extensively characterized by XRD, EDX, SEM, TEM, FT-IR, UV-vis DRS, BET, TGA, and PL instruments. The photocatalytic performance of these samples was studied by degradations of three dye contaminants under visible-light exposure. Among the ternary photocatalysts, the g-C3N4/Ag3VO4/AgBr (10%) nanocomposite displayed the maximum activity for RhB degradation with rate constant of 1366.6 × 10-4 min-1, which is 116, 7.23, and 38.5 times as high as those of the g-C3N4, g-C3N4/AgBr (10%), and g-C3N4/Ag3VO4 (30%) photocatalysts, respectively. The effects of synthesis time and calcination temperature were also investigated and discussed. Furthermore, according to the trapping experiments, it was found that superoxide anion radicals were the predominant reactive species in this system. Finally, the ternary photocatalyst displayed superlative activity in removal of the contaminants under visible-light exposure, displaying great potential of this ternary photocatalyst for environmental remediation, because of a facile synthesis route and outstanding photocatalytic performance.

  7. Photocatalytic activity of attapulgite-TiO2-Ag3PO4 ternary nanocomposite for degradation of Rhodamine B under simulated solar irradiation

    Science.gov (United States)

    He, Hongcai; Jiang, Zhuolin; He, Zhaoling; Liu, Tao; Li, Enzhu; Li, Bao-Wen

    2018-01-01

    An excellent ternary composite photocatalyst consisting of silver orthophosphate (Ag3PO4), attapulgite (ATP), and TiO2 was synthesized, in which heterojunction was formed between dissimilar semiconductors to promote the separation of photo-generated charges. The ATP/TiO2/Ag3PO4 composite was characterized by SEM, XRD, and UV-vis diffuse reflectance spectroscopy. The co-deposition of Ag3PO4 and TiO2 nanoparticles onto the surface of ATP forms a lath-particle structure. Compared with composite photocatalysts consisting of two phases, ATP/TiO2/Ag3PO4 ternary composite exhibits greatly improved photocatalytic activity for degradation of rhodamine B under simulated solar irradiation. Such ternary composite not only improves the stability of Ag3PO4, but also lowers the cost by reducing application amount of Ag3PO4, which provides guidance for the design of Ag3PO4- and Ag-based composites for photocatalytic applications.

  8. Organic semiconductors in a spin

    CERN Document Server

    Samuel, I

    2002-01-01

    A little palladium can go a long way in polymer-based light-emitting diodes. Inorganic semiconductors such as silicon and gallium arsenide are essential for countless applications in everyday life, ranging from PCs to CD players. However, while they offer unrivalled computational speed, inorganic semiconductors are also rigid and brittle, which means that they are less suited to applications such as displays and flexible electronics. A completely different class of materials - organic semiconductors - are being developed for these applications. Organic semiconductors have many attractive features: they are easy to make, they can emit visible light, and there is tremendous scope for tailoring their properties to specific applications by changing their chemical structure. Research groups and companies around the world have developed a wide range of organic-semiconductor devices, including transistors, light-emitting diodes (LEDs), solar cells and lasers. (U.K.)

  9. A novel ternary logic circuit using Josephson junction

    International Nuclear Information System (INIS)

    Morisue, M.; Oochi, K.; Nishizawa, M.

    1989-01-01

    This paper describes a novel Josephson complementary ternary logic circuit named as JCTL. This fundamental circuit is constructed by combination of two SQUIDs, one of which is switched in the positive direction and the other in the negative direction. The JCTL can perform the fundamental operations of AND, OR, NOT and Double NOT in ternary form. The principle of the operation and design criteria are described in detail. The results of the simulation show that the reliable operations of these circuits can be achieved with a high performance

  10. PM1 steganographic algorithm using ternary Hamming Code

    Directory of Open Access Journals (Sweden)

    Kamil Kaczyński

    2015-12-01

    Full Text Available PM1 algorithm is a modification of well-known LSB steganographic algorithm. It has increased resistance to selected steganalytic attacks and increased embedding efficiency. Due to its uniqueness, PM1 algorithm allows us to use of larger alphabet of symbols, making it possible to further increase steganographic capacity. In this paper, we present the modified PM1 algorithm which utilizies so-called syndrome coding and ternary Hamming code. The modified algorithm has increased embedding efficiency, which means fewer changes introduced to carrier and increased capacity.[b]Keywords[/b]: steganography, linear codes, PM1, LSB, ternary Hamming code

  11. Binary and ternary carbides and nitrides of the transition metals and their phase relations

    International Nuclear Information System (INIS)

    Holleck, H.

    1981-01-01

    The occurrance and the structure of the binary and ternary transition metal carbides and nitrides are described. Phase diagrams are assessed for most of the binary and ternary systems. Many ternary phase diagrams are published in this report for the first time. (orig.) [de

  12. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  13. A Study of the Effect of Djurliete, Bornite and Chalcopyrite during the Dissolution of Gold with a Solution of Ammonia-Cyanide

    Directory of Open Access Journals (Sweden)

    Mike Fulton

    2012-11-01

    Full Text Available The high solubility of copper sulphide minerals is an issue in the cyanidation of gold ores. The objective of this study was to quantify the effect of individual copper sulphide minerals on the Hunt process, which showed advantages over cyanidation. High purity djurleite, bornite and chalcopyrite, with a P70 of 70–74 microns, were mixed with fine quartz and gold powder (3–8 micron to obtain a copper concentration of 0.3%. The ammonia-cyanide leaching of slurry with djurleite proved to be more effective than cyanidation; producing comparable extraction of gold (99%, while reducing the cyanide consumption from 5.8 to 1.2 kg/t NaCN. Lead nitrate improved the Hunt leaching. The lower cyanide consumption is associated to a significant reduction of copper dissolved. XPS surface analysis of djurleite showed that lead nitrate favored the formation of Cu(OH2 species. Lead was also detected on the surface (oxide or hydroxide. Sulphide and copper compounds (cyanide and sulphide were reaction products responsible for inhibiting the dissolution of gold. Lead nitrate added in the Hunt leaching of bornite produced 99% gold extraction. Surface reaction products were similar to djurleite. The cyanide consumption (~4.4 kg/t NaCN was not reduced by the addition of ammonia. Cyanidation of chalcopyrite showed a lower consumption of cyanide 0.33 kg/t NaCN compared to 0.21 kg/t NaCN for Hunt. No significant interferences were observed in gold leaching with a slurry containing chalcopyrite.

  14. Synthesis of single phase chalcopyrite CuIn1−xGaxSe2 (0 ≤ x ≤ 1) nanoparticles by one-pot method

    International Nuclear Information System (INIS)

    Han, Zhaoxia; Zhang, Dawei; Chen, Qinmiao; Hong, Ruijin; Tao, Chunxian; Huang, Yuanshen; Ni, Zhengji; Zhuang, Songlin

    2014-01-01

    Graphical abstract: - Highlights: • A facile and rapid one-pot synthesis method is presented. • The effects of various Ga contents are investigated. • Single phase chalcopyrite CuIn 1−x Ga x Se 2 nanoparticles can be easily synthesized. • The phase formation sequence is from CuSe to CuGaSe 2 , then to CuIn 1−x Ga x Se 2 . • The possible reaction mechanism of CuIn 1−x Ga x Se 2 nanoparticles is proposed. - Abstract: Single phase chalcopyrite and near stoichiometric CuIn 1−x Ga x Se 2 (0 ≤ x ≤ 1) nanoparticles were successfully synthesized by using a facile and rapid one-pot method. The effects of various Ga contents on crystal phase, morphology, element composition and absorption spectrum of the as-synthesized CuIn 1−x Ga x Se 2 nanoparticles were investigated in detail. The XRD and Raman patterns indicated that the as-synthesized nanoparticles had a single phase chalcopyrite structure, and the diffraction peaks shifted toward larger diffraction angles or higher frequencies with increasing Ga content. The FE-SEM images showed that the as-synthesized nanoparticles were polydispersed in both size and shape, and the nanoparticles with higher Ga content were more prone to aggregate. The Vis–IR absorption spectra showed strong absorption in the entire visible light region. The estimated band gap increased from 1.00 eV to 1.68 eV as Ga content increasing

  15. Synthesis and characterization of TiO2/Ag/polymer ternary nanoparticles via surface-initiated atom transfer radical polymerization

    International Nuclear Information System (INIS)

    Park, Jung Tae; Koh, Joo Hwan; Seo, Jin Ah; Cho, Yong Soo; Kim, Jong Hak

    2011-01-01

    We report on the novel ternary hybrid materials consisting of semiconductor (TiO 2 ), metal (Ag) and polymer (poly(oxyethylene methacrylate) (POEM)). First, a hydrophilic polymer, i.e. POEM, was grafted from TiO 2 nanoparticles via the surface-initiated atom transfer radical polymerization (ATRP) technique. These TiO 2 -POEM brush nanoparticles were used to template the formation of Ag nanoparticles by introduction of a AgCF 3 SO 3 precursor and a NaBH 4 aqueous solution for reduction process. Successful grafting of polymeric chains from the surface of TiO 2 nanoparticles and the in situ formation of Ag nanoparticles within the polymeric chains were confirmed using transmission electron microscopy (TEM), UV-vis spectroscopy, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). FT-IR spectroscopy also revealed the specific interaction of Ag nanoparticles with the C=O groups of POEM brushes. This study presents a simple route for the in situ synthesis of both metal and polymer confined within the semiconductor, producing ternary hybrid inorganic-organic nanomaterials.

  16. Semiconductor radiation detector

    Science.gov (United States)

    Bell, Zane W.; Burger, Arnold

    2010-03-30

    A semiconductor detector for ionizing electromagnetic radiation, neutrons, and energetic charged particles. The detecting element is comprised of a compound having the composition I-III-VI.sub.2 or II-IV-V.sub.2 where the "I" component is from column 1A or 1B of the periodic table, the "II" component is from column 2B, the "III" component is from column 3A, the "IV" component is from column 4A, the "V" component is from column 5A, and the "VI" component is from column 6A. The detecting element detects ionizing radiation by generating a signal proportional to the energy deposited in the element, and detects neutrons by virtue of the ionizing radiation emitted by one or more of the constituent materials subsequent to capture. The detector may contain more than one neutron-sensitive component.

  17. Semiconductor testing method

    International Nuclear Information System (INIS)

    Brown, Stephen.

    1992-01-01

    In a method of avoiding use of nuclear radiation, eg gamma rays, X-rays, electron beams, for testing semiconductor components for resistance to hard radiation, which hard radiation causes data corruption in some memory devices and 'latch-up' in others, similar fault effects can be achieved using a xenon or other 'light' flash gun even though the penetration of light is significantly less than that of gamma rays. The method involves treating a device with gamma radiation, measuring a particular fault current at the onset of a fault event, repeating the test with light to confirm the occurrence of the fault event at the same measured fault current, and using the fault current value as a reference for future tests using light on similar devices. (author)

  18. Radial semiconductor drift chambers

    International Nuclear Information System (INIS)

    Rawlings, K.J.

    1987-01-01

    The conditions under which the energy resolution of a radial semiconductor drift chamber based detector system becomes dominated by the step noise from the detector dark current have been investigated. To minimise the drift chamber dark current attention should be paid to carrier generation at Si/SiO 2 interfaces. This consideration conflicts with the desire to reduce the signal risetime: a higher drift field for shorter signal pulses requires a larger area of SiO 2 . Calculations for the single shaping and pseudo Gaussian passive filters indicate that for the same degree of signal risetime sensitivity in a system dominated by the step noise from the detector dark current, the pseudo Gaussian filter gives only a 3% improvement in signal/noise and 12% improvement in rate capability compared with the single shaper performance. (orig.)

  19. Organic Semiconductor Photovoltaics

    Science.gov (United States)

    Sariciftci, Niyazi Serdar

    2005-03-01

    Recent developments on organic photovoltaic elements are reviewed. Semiconducting conjugated polymers and molecules as well as nanocrystalline inorganic semiconductors are used in composite thin films. The photophysics of such photoactive devices is based on the photoinduced charge transfer from donor type semiconducting molecules onto acceptor type molecules such as Buckminsterfullerene, C60 and/or nanoparticles. Similar to the first steps in natural photosynthesis, this photoinduced electron transfer leads to a number of potentially interesting applications which include sensitization of the photoconductivity and photovoltaic phenomena. Examples of photovoltaic architectures are discussed with their potential in terrestrial solar energy conversion. Several materials are introduced and discussed for their photovoltaic activities. Furthermore, nanomorphology has been investigated with AFM, SEM and TEM. The morphology/property relationship for a given photoactive system is found to be a major effect.

  20. The influence of pressure on the birefringence in semiconductor compounds ZnS, CuGaS2, and InPS4

    International Nuclear Information System (INIS)

    Lavrentyev, A.A.; Gabrelian, B.V.; Kulagin, B.B.; Nikiforov, I.Ya.; Sobolev, V.V.

    2007-01-01

    Using the modified method of augmented plane waves and the code WIEN2k the calculations of the electron band structure, densities of electron states, and imaginary part of dielectric response function were carried out for different polarization of the vector of electrical field ε xx and ε zz for the semiconductor compounds ZnS, CuGaS 2 , and InPS 4 . The calculations were performed both for undisturbed crystals and for distorted crystals due to the applied pressure. The compounds studied have the similar crystallographic structures: ZnS - sphalerite, CuGaS 2 - chalcopyrite, and InPS 4 - twice defective chalcopyrite. It is known, that in cubic ZnS there is no birefringence, whereas in CuGaS 2 and InPS 4 there is one. But CuGaS 2 has so called isotropic point (where ε xx =ε zz ) in the visible optical range, and InPS 4 has no such point. Our calculations of ε xx and ε zz have shown that in ZnS under the pressure the isotropic points arise, but in InPS 4 they do not exist. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Growth Mechanism of Nanowires: Ternary Chalcogenides

    Science.gov (United States)

    Singh, N. B.; Coriell, S. R.; Hopkins, R. H.; Su, Ching Hua; Arnold, B.; Choa, Fow-Sen; Cullum, Brian

    2016-01-01

    In the past two decades there has been a large rise in the investment and expectations for nanotechnology use. Almost every area of research has projected improvements in sensors, or even a promise for the emergence of some novel device technologies. For these applications major focuses of research are in the areas of nanoparticles and graphene. Although there are some near term applications with nanowires in photodetectors and other low light detectors, there are few papers on the growth mechanism and fabrication of nanowire-based devices. Semiconductor nanowires exhibit very favorable and promising optical properties, including high transparency and a several order of magnitude better photocurrent than thin film and bulk materials. We present here an overview of the mechanism of nanowire growth from the melt, and some preliminary results for the thallium arsenic selenide material system. Thallium arsenic selenide (TAS) is a multifunctional material combining excellent acousto-optical, nonlinear and radiation detection properties. We observed that small units of (TAS) nanocubes arrange and rearrange at moderate melt undercooling to form the building block of a nanowire. In some cases very long wires (less than mm) are formed. Since we avoided the catalyst, we observed self-nucleation and uncontrolled growth of wires from different places.

  2. Band gap characterization of ternary BBi1−xNx (0≤x≤1) alloys using modified Becke–Johnson (mBJ) potential

    International Nuclear Information System (INIS)

    Yalcin, Battal G.

    2015-01-01

    The semi-local Becke–Johnson (BJ) exchange-correlation potential and its modified form proposed by Tran and Blaha have attracted a lot of interest recently because of the surprisingly accurate band gaps they can deliver for many semiconductors and insulators (e.g., sp semiconductors, noble-gas solids, and transition-metal oxides). The structural and electronic properties of ternary alloys BBi 1−x N x (0≤x≤1) in zinc-blende phase have been reported in this study. The results of the studied binary compounds (BN and BBi) and ternary alloys BBi 1−x N x structures are presented by means of density functional theory. The exchange and correlation effects are taken into account by using the generalized gradient approximation (GGA) functional of Wu and Cohen (WC) which is an improved form of the most popular Perdew–Burke–Ernzerhof (PBE). For electronic properties the modified Becke–Johnson (mBJ) potential, which is more accurate than standard semi-local LDA and PBE calculations, has been chosen. Geometric optimization has been implemented before the volume optimization calculations for all the studied alloys structure. The obtained equilibrium lattice constants of the studied binary compounds are in coincidence with experimental works. And, the variation of the lattice parameter of ternary alloys BBi 1−x N x almost perfectly matches with Vegard's law. The spin–orbit interaction (SOI) has been also considered for structural and electronic calculations and the results are compared to those of non-SOI calculations

  3. Light-Triggered Ternary Device and Inverter Based on Heterojunction of van der Waals Materials.

    Science.gov (United States)

    Shim, Jaewoo; Jo, Seo-Hyeon; Kim, Minwoo; Song, Young Jae; Kim, Jeehwan; Park, Jin-Hong

    2017-06-27

    Multivalued logic (MVL) devices/circuits have received considerable attention because the binary logic used in current Si complementary metal-oxide-semiconductor (CMOS) technology cannot handle the predicted information throughputs and energy demands of the future. To realize MVL, the conventional transistor platform needs to be redesigned to have two or more distinctive threshold voltages (V TH s). Here, we report a finding: the photoinduced drain current in graphene/WSe 2 heterojunction transistors unusually decreases with increasing gate voltage under illumination, which we refer to as the light-induced negative differential transconductance (L-NDT) phenomenon. We also prove that such L-NDT phenomenon in specific bias ranges originates from a variable potential barrier at a graphene/WSe 2 junction due to a gate-controllable graphene electrode. This finding allows us to conceive graphene/WSe 2 -based MVL logic circuits by using the I D -V G characteristics with two distinctive V TH s. Based on this finding, we further demonstrate a light-triggered ternary inverter circuit with three stable logical states (ΔV out of each state <0.05 V). Our study offers the pathway to substantialize MVL systems.

  4. Synthesis and Characterization of the Ternary Thiobismuthates A9Bi13S24 (A = K, Rb)

    KAUST Repository

    Davaasuren, Bambar

    2016-11-16

    Ternary alkali metal thiobismuthates ABiS (A = K, Rb) were synthesized by direct combination reactions at 650 °C. The compounds crystallize in the monoclinic space group C2/m (no. 12) with cell parameters a = 30.919(1) Å, b = 4.1008(2) Å, c = 20.9072(9) Å, β = 105.826(3)° for KBiS (1) and a = 31.823(6) Å, b = 4.1177(8) Å, c = 21.086(4) Å, β = 105.62(3)° for RbBiS (2). The crystal structure of 1 contains a 3D [KBiS] polyanionic framework, whereas 2 consists of 2D [RbBiS] polyanionic slabs stacked along [201]. Both 1 and 2 are semiconductors with a band gap of 1.4 and 1.3 eV, respectively, which is supported by an electronic structure calculation. 1 melts congruently at 580 °C, while 2 melts incongruently at 575 °C. 1 and 2 are airstable and insoluble in water and organic solvents.

  5. Sc-W-Si and Sc-W-Ge ternary systems

    International Nuclear Information System (INIS)

    Kotur, B.Ya.; Voznyak, O.M.; Bodak, O.I.

    1989-01-01

    Phase equilibria in Sc-W-Si and Sc-W-Ge ternary systems are investigated at 1070 K. Sc 2+x W 3-x Si 4 ternary compound (0≤x≤1) is determined, its crystal structure (Ce 2 Sc 3 Si 4 structural type), as well as, change of elementary cell parameters and microhardness within homogeneity range are determined. Regularities of component interaction within Sc-M-Si(Ge) (M-Cr, Mo, W) ternary system are determined. Ternary systems with Mo and W are more closer to each other according to the phase equilibria character, than to ternary systems with Cr

  6. Ternary mixtures of alkyltriphenylphosphonium bromides (C12 TPB ...

    Indian Academy of Sciences (India)

    Administrator

    Critical Micellar Concentrations (CMCs) by conductometry, but their ternary mixtures produce single ... efficiently quenched pyrene fluorescence; the performances of the homologues in this respect were assessed. Keywords ..... The shape of the amphiphile aggregates ..... Haque M E, Das A R and Moulik S P 1999 J. Colloid.

  7. Mechanochemically prepared ternary hybrid cathode material for lithium batteries

    International Nuclear Information System (INIS)

    Posudievsky, Oleg Yu; Kozarenko, Olga A.; Dyadyun, Vyacheslav S.; Jorgensen, Scott W.; Spearot, James A.; Koshechko, Vyacheslav G.; Pokhodenko, Vitaly D.

    2013-01-01

    Graphical abstract: The presence of macromolecules of an ion-conducting polymer in the composition of the ternary nanocomposite PPy–PEO/V 2 O 5 promotes interfacial transfer of lithium ions and also facilitates faster transport inside the particles of the nanocomposite. -- Highlights: • Two- and three component nanocomposites are prepared via a solvent-free mechanochemical synthesis. • The nanocomposites retain their capacity above 200 mA h g −1 for at least one hundred cycles. • The presence of PEO promotes interfacial transfer of lithium ions and facilitates faster transport inside the nanocomposite. -- Abstract: Ternary host–guest nanocomposite based on vanadium oxide and two polymers with different types of conductivity (ionic and electronic) – polypyrrole (PPy) and polyethylene oxide (PEO) – is prepared by solventless mechanochemical synthesis. The nanocomposite can be reversibly cycled with a specific capacity of ∼200 mA h g −1 for at least one hundred cycles of full charge–discharge as the active component of the positive electrode of lithium batteries. Electrochemical performance of ternary PPy 0.1 PEO 0.15 V 2 O 5 is compared with two-component analog PPy 0.1 V 2 O 5 . The presence of macromolecules of an ion-conducting polymer in the composition of the ternary nanocomposite PPy 0.1 PEO 0.15 V 2 O 5 promotes interfacial transfer of lithium ions and also facilitates faster transport inside the particles of the nanocomposite

  8. Robust Self-Triggered Coordination With Ternary Controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo; Nair, G.N.

    2013-01-01

    This paper regards the coordination of networked systems, studied in the framework of hybrid dynamical systems. We design a coordination scheme which combines the use of ternary controllers with a self-triggered communication policy. The communication policy requires the agents to measure, at each

  9. Excess isentropic compressibility and speed of sound of the ternary

    Indian Academy of Sciences (India)

    These excess properties of the binary mixtures were fitted to Redlich-Kister equation, while the Cibulka's equation was used to fit the values related to the values to the ternary system. These excess properties have been used to discuss the presence of significant interactions between the component molecules in the binary ...

  10. Robust self-triggered coordination with ternary controllers

    NARCIS (Netherlands)

    De Persis, Claudio; Frasca, Paolo

    2013-01-01

    This paper regards the coordination of networked systems, studied in the framework of hybrid dynamical systems. We design a coordination scheme which combines the use of ternary controllers with a self-triggered communication policy. The communication policy requires the agents to measure, at each

  11. Calculation of Fe–B–V ternary phase diagram

    International Nuclear Information System (INIS)

    Homolová, Viera; Kroupa, Aleš; Výrostková, Anna

    2012-01-01

    Highlights: ► Phase diagram of Fe–B–V system was modelled by CALPHAD method. ► Database for thermodynamic calculations for Fe–B–V system was created. ► The new ternary phase was found in 67Fe–18B–15V [in at.%] alloy. - Abstract: The phase equilibria of the Fe–B–V ternary system are studied experimentally and theoretically in this paper. Phase diagram of the system was modelled by CALPHAD method. Boron was modelled as an interstitial element in the FCC and BCC solid solutions. The calculations of isothermal sections of phase diagram are compared with our experimental results at 903 and 1353 K and with available literature experimental data. New ternary phase (with chemical composition 28Fe32V40B in at.%) was found in 67Fe–18B–15V alloy [in at.%]. Further experimental studies for the determination of exact nature of the ternary phase including crystallographic information are necessary.

  12. Effect of Limestone Powder on Microstructure of Ternary Cementitious System

    NARCIS (Netherlands)

    Zhang, Y.; Ye, G.

    2012-01-01

    The pressure to reach sustainability favours the development of ternary composite cement. The synergistic effect on mechanical behaviour at 28 days between limestone powder (LP) and pozzolanic additives, i.e. fly ash (FA) and blast furnace slag (BFS), has been documented. In order to better

  13. Studies on Molecular Interaction in Ternary Liquid Mixtures

    Directory of Open Access Journals (Sweden)

    R. Uvarani

    2010-01-01

    Full Text Available Ultrasonic velocity, density and viscosity for the ternary liquid mixtures of cyclohexanone with 1-propanol and 1-butanol in carbon tetrachloride were measured at 303 K. The acoustical parameters and their excess values were calculated. The trends in the variation of these excess parameters were used to discuss the nature and strength of the interactions present between the component molecules.

  14. A Simple Refraction Experiment for Probing Diffusion in Ternary Mixtures

    Science.gov (United States)

    Coutinho, Cecil A.; Mankidy, Bijith D.; Gupta, Vinay K.

    2010-01-01

    Diffusion is a fundamental phenomenon that is vital in many chemical processes such as mass transport in living cells, corrosion, and separations. We describe a simple undergraduate-level experiment based on Weiner's Method to probe diffusion in a ternary aqueous mixture of small molecular-weight molecules. As an illustration, the experiment…

  15. Segregation in ternary alloys: an interplay of driving forces

    International Nuclear Information System (INIS)

    Luyten, J.; Helfensteyn, S.; Creemers, C.

    2003-01-01

    Monte Carlo (MC) simulations combined with the constant bond energy (CBE) model are set up to explore and understand the general segregation behaviour in ternary alloys as a function of composition and more in particular the segregation to Cu-Ni-Al (1 0 0) surfaces. Besides its simplicity, allowing swift simulations, which are necessary for a first general survey over all possible compositions, one of the advantages of the CBE model lies in the possibility to clearly identify the different driving forces for segregation. All simulations are performed in the Grand Canonical Ensemble, using a new algorithm to determine the chemical potential of the components. Notwithstanding the simplicity of the CBE model, one extra feature is evidenced: depending on the values of the interatomic interaction parameters, in some regions of the ternary diagram, a single solid solution becomes thermodynamically unstable, leading to demixing into two conjugate phases. The simulations are first done for three hypothetical systems that are however representative for real alloy systems. The three systems are characterised by different sets of interatomic interaction parameters. These extensive simulations over the entire composition range of the ternary alloy yield a 'topographical' segregation map, showing distinct regions where different species segregate. These distinct domains originate from a variable interplay between the driving forces for segregation and attractive/repulsive interactions in the bulk of the alloy. The results on these hypothetical systems are very helpful for a better understanding of the segregation behaviour in Cu-Ni-Al and other ternary alloys

  16. Univolatility curves in ternary mixtures: geometry and numerical computation

    DEFF Research Database (Denmark)

    Shcherbakova, Nataliya; Rodriguez-Donis, Ivonne; Abildskov, Jens

    2017-01-01

    We propose a new non-iterative numerical algorithm allowing computation of all univolatility curves in homogeneous ternary mixtures independently of the presence of the azeotropes. The key point is the concept of generalized univolatility curves in the 3D state space, which allows the main comput...

  17. Phase coexistence and line tension in ternary lipid systems

    NARCIS (Netherlands)

    Idema, T.; Leeuwen, van J.M.J.; Storm, C.

    2009-01-01

    The ternary system consisting of cholesterol, a saturated lipid, and an unsaturated one exhibits a rich phase behavior with multiple phase coexistence regimes. Remarkably, phase separation even occurs when each of the three binary systems consisting of two of these components is a uniform mixture.

  18. Thermodynamic evaluation of the Ti-Al-O ternary system

    International Nuclear Information System (INIS)

    Lee, B.-J.

    1997-01-01

    A thermodynamic evaluation of the Ti-Al-O ternary system has been made by using thermodynamic models for the Gibbs energy of individual phases. A consistent model parameter set was determined so that the calculation of isothermal sections and other thermodynamic quantities becomes possible. The agreement between calculation and corresponding experimental data was generally good along large temperature and composition range. (orig.)

  19. Magnetic excitations in ferromagnetic semiconductors

    International Nuclear Information System (INIS)

    Furdyna, J.K.; Liu, X.; Zhou, Y.Y.

    2009-01-01

    Magnetic excitations in a series of GaMnAs ferromagnetic semiconductor films were studied by ferromagnetic resonance (FMR). Using the FMR approach, multi-mode spin wave resonance spectra have been observed, whose analysis provides information on magnetic anisotropy (including surface anisotropy), distribution of magnetization precession within the GaMnAs film, dynamic surface spin pinning (derived from surface anisotropy), and the value of exchange stiffness constant D. These studies illustrate a combination of magnetism and semiconductor physics that is unique to magnetic semiconductors

  20. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  1. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei

    2016-02-16

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  2. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

    KAUST Repository

    Wang, Zhenwei; Nayak, Pradipta K.; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N.

    2016-01-01

    The development of transparent p-type oxide semiconductors with good performance may be a true enabler for a variety of applications where transparency, power efficiency, and greater circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, here, recent developments in materials and devices based on p-type oxide semiconductors are reviewed, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides, and nickel oxides. The crystal and electronic structures of these materials are discussed, along with approaches to enhance valence-band dispersion to reduce effective mass and increase mobility. Strategies to reduce interfacial defects, off-state current, and material instability are suggested. Furthermore, it is shown that promising progress has been made in the performance of various types of devices based on p-type oxides. Several innovative approaches exist to fabricate transparent complementary metal oxide semiconductor (CMOS) devices, including novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains. However, despite recent developments, p-type oxides still lag in performance behind their n-type counterparts, which have entered volume production in the display market. Recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented.

  3. Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

    Science.gov (United States)

    Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

    2016-01-01

    Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

  4. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1990-01-01

    The state of the art in semiconductor detectors for elementary particle physics and X-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; i) classical semiconductor diode detectors and ii) semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. (orig.)

  5. State of the art in semiconductor detectors

    International Nuclear Information System (INIS)

    Rehak, P.; Gatti, E.

    1989-01-01

    The state of the art in semiconductor detectors for elementary particle physics and x-ray astronomy is briefly reviewed. Semiconductor detectors are divided into two groups; classical semiconductor diode detectors; and semiconductor memory detectors. Principles of signal formation for both groups of detectors are described and their performance is compared. New developments of silicon detectors are reported here. 13 refs., 8 figs

  6. Semiconductor device comprising a pn-heterojunction

    NARCIS (Netherlands)

    2007-01-01

    An electric device is disclosed comprising a pn-heterojunction ( 4 ) formed by a nanowire ( 3 ) of 111 -V semiconductor material and a semiconductor body ( 1 ) comprising a group IV semiconductor material. The nanowire ( 3 ) is positioned in direct contact with the surface ( 2 ) of the semiconductor

  7. Toward designing semiconductor-semiconductor heterojunctions for photocatalytic applications

    Science.gov (United States)

    Zhang, Liping; Jaroniec, Mietek

    2018-02-01

    Semiconductor photocatalysts show a great potential for environmental and energy-related applications, however one of the major disadvantages is their relatively low photocatalytic performance due to the recombination of electron-hole pairs. Therefore, intensive research is being conducted toward design of heterojunctions, which have been shown to be effective for improving the charge-transfer properties and efficiency of photocatalysts. According to the type of band alignment and direction of internal electric field, heterojunctions are categorized into five different types, each of which is associated with its own charge transfer characteristics. Since the design of heterojunctions requires the knowledge of band edge positions of component semiconductors, the commonly used techniques for the assessment of band edge positions are reviewed. Among them the electronegativity-based calculation method is applied for a large number of popular visible-light-active semiconductors, including some widely investigated bismuth-containing semiconductors. On basis of the calculated band edge positions and the type of component semiconductors reported, heterojunctions composed of the selected bismuth-containing semiconductors are proposed. Finally, the most popular synthetic techniques for the fabrication of heterojunctions are briefly discussed.

  8. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method

    NARCIS (Netherlands)

    2008-01-01

    The invention relates to a method of manufacturing a semiconductor device (10) with a semiconductor body (1) which is provided with at least one semiconductor element, wherein on the surface of the semiconductor body (1) a mesa- shaped semiconductor region (2) is formed, a masking layer (3) is

  9. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  10. Experimental investigation of the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases

    International Nuclear Information System (INIS)

    Mashadieva, Leyla F.; Aliev, Ziya S.; Shevelkov, Andrei V.; Babanly, Mahammad B.

    2013-01-01

    Highlights: ► The self-consistent phase diagram of the Ag–Bi–I system is constructed. ► Ag 2 BiI 5 and AgBi 2 I 7 are the only ternary phases of the system. ► Standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 are calculated. - Abstract: The phase equilibriums in the Ag–Bi–I ternary system and thermodynamic properties of the ternary phases were experimentally determined by using DTA and XRD techniques and EMF measurements with the Ag 4 RbI 5 solid electrolyte. According to the obtained experimental results, the polythermal sections of the ternary phase diagram, its isothermal section at 300 K as well as the projection of the liquids surface have been revised. The fields of the primary crystallization and types and coordinates of nonvariant and monovariant equilibriums were determined. The partial molar functions of silver iodide and silver in the alloys as well as the standard thermodynamic functions of formation and the standard entropies of Ag 2 BiI 5 and AgBi 2 I 7 were calculated based on EMF measurements.

  11. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  13. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  14. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  15. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  16. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  17. Self-assembling peptide semiconductors

    Science.gov (United States)

    Tao, Kai; Makam, Pandeeswar; Aizen, Ruth; Gazit, Ehud

    2017-01-01

    Semiconductors are central to the modern electronics and optics industries. Conventional semiconductive materials bear inherent limitations, especially in emerging fields such as interfacing with biological systems and bottom-up fabrication. A promising candidate for bioinspired and durable nanoscale semiconductors is the family of self-assembled nanostructures comprising short peptides. The highly ordered and directional intermolecular π-π interactions and hydrogen-bonding network allow the formation of quantum confined structures within the peptide self-assemblies, thus decreasing the band gaps of the superstructures into semiconductor regions. As a result of the diverse architectures and ease of modification of peptide self-assemblies, their semiconductivity can be readily tuned, doped, and functionalized. Therefore, this family of electroactive supramolecular materials may bridge the gap between the inorganic semiconductor world and biological systems. PMID:29146781

  18. Temperature controller of semiconductor laser

    Czech Academy of Sciences Publication Activity Database

    Matoušek, Vít; Číp, Ondřej

    2003-01-01

    Roč. 73, č. 3 (2003), s. 10 - 12 ISSN 0928-5008 Institutional research plan: CEZ:AV0Z2065902 Keywords : temperature controller * semiconductor laser * laser diode Subject RIV: BH - Optics, Masers, Lasers

  19. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    International Nuclear Information System (INIS)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong; Ma, Zhongquan

    2016-01-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  20. Questing and the application for silicon based ternary compound within ultra-thin layer of SIS intermediate region

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Shumin; Gao, Ming; Wan, Yazhou; Du, Huiwei; Li, Yong [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Ma, Zhongquan, E-mail: zqma@shu.edu.cn [SHU-SolarE R& D Lab, Department of Physics, Shanghai University, Shanghai 200444 (China); Instrumental Analysis & Research Center, Shanghai University, Shanghai 200444 (China)

    2016-12-01

    Highlights: • A new kind of functional material with plasticity of dielectric was obtained. • Powerful characterization methods was exploited to determine this ultra-thin layer. • The electronic structures and properties of this intermediate layer were analyzed. • A potential application of this structure were investigated. - Abstract: A silicon based ternary compound was supposed to be solid synthesized with In, Si and O elements by magnetron sputtering of indium tin oxide target (ITO) onto crystal silicon substrate at 250 °C. To make clear the configuration of the intermediate region, a potential method to obtain the chemical bonding of Si with other existing elements was exploited by X-ray photoelectron spectroscopy (XPS) instrument combined with other assisted techniques. The phase composition and solid structure of the interfacial region between ITO and Si substrate were investigated by X-ray diffraction (XRD) and high resolution cross sectional transmission electron microscope (HR-TEM). A photovoltaic device with structure of Al/Ag/ITO/SiOx/p-Si/Al was assembled by depositing ITO films onto the p-Si substrate by using magnetron sputtering. The new matter has been assumed to be a buffer layer for semiconductor-insulator-semiconductor (SIS) photovoltaic device and plays critical role for the promotion of optoelectronic conversion performance from the view point of device physics.

  1. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    Energy Technology Data Exchange (ETDEWEB)

    Marchewka, M., E-mail: marmi@ur.edu.pl; Woźny, M.; Polit, J.; Sheregii, E. M. [Faculty of Mathematics and Natural Sciences, Centre for Microelectronics and Nanotechnology, University of Rzeszów, Pigonia 1, 35-959 Rzeszów (Poland); Kisiel, A. [Institute of Physics, Jagiellonian University, Reymonta 4, Kraków 30-059 (Poland); Robouch, B. V.; Marcelli, A. [INFN-Laboratori Nazionali di Frascati, Via E. Fermi 40, I-00044 Frascati (Italy)

    2014-03-21

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III–V and II–VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra.

  2. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    International Nuclear Information System (INIS)

    Marchewka, M.; Woźny, M.; Polit, J.; Sheregii, E. M.; Kisiel, A.; Robouch, B. V.; Marcelli, A.

    2014-01-01

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III–V and II–VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra

  3. The stochastic model for ternary and quaternary alloys: Application of the Bernoulli relation to the phonon spectra of mixed crystals

    Science.gov (United States)

    Marchewka, M.; Woźny, M.; Polit, J.; Kisiel, A.; Robouch, B. V.; Marcelli, A.; Sheregii, E. M.

    2014-03-01

    To understand and interpret the experimental data on the phonon spectra of the solid solutions, it is necessary to describe mathematically the non-regular distribution of atoms in their lattices. It appears that such description is possible in case of the strongly stochastically homogenous distribution which requires a great number of atoms and very carefully mixed alloys. These conditions are generally fulfilled in case of high quality homogenous semiconductor solid solutions of the III-V and II-VI semiconductor compounds. In this case, we can use the Bernoulli relation describing probability of the occurrence of one n equivalent event which can be applied, to the probability of finding one from n configurations in the solid solution lattice. The results described in this paper for ternary HgCdTe and GaAsP as well as quaternary ZnCdHgTe can provide an affirmative answer to the question: whether stochastic geometry, e.g., the Bernoulli relation, is enough to describe the observed phonon spectra.

  4. Optimization of staged bioleaching of low-grade chalcopyrite ore in the presence and absence of chloride in the irrigating lixiviant: ANFIS simulation.

    Science.gov (United States)

    Vakylabad, Ali Behrad; Schaffie, Mahin; Naseri, Ali; Ranjbar, Mohammad; Manafi, Zahra

    2016-07-01

    In this investigation, copper was bioleached from a low-grade chalcopyrite ore using a chloride-containing lixiviant. In this regard, firstly, the composition of the bacterial culture media was designed to control the cost in commercial application. The bacterial culture used in this process was acclimated to the presence of chloride in the lixiviant. Practically speaking, the modified culture helped the bio-heap-leaching system operate in the chloridic media. Compared to the copper recovery from the low-grade chalcopyrite by bioleaching in the absence of chloride, bioleaching in the presence of chloride resulted in improved copper recovery. The composition of the lixiviant used in this study was a modification with respect to the basal salts in 9 K medium to optimize the leaching process. When leaching the ore in columns, 76.81 % Cu (based on solid residues of bioleaching operation) was recovered by staged leaching with lixiviant containing 34.22 mM NaCl. The quantitative findings were supported by SEM/EDS observations, X-ray elemental mapping, and mineralogical analysis of the ore before and after leaching. Finally, Adaptive neuro-fuzzy inference system (ANFIS) was used to simulate the operational parameters affecting the bioleaching operation in chloride-sulfate system.

  5. Expression of Critical Sulfur- and Iron-Oxidation Genes and the Community Dynamics During Bioleaching of Chalcopyrite Concentrate by Moderate Thermophiles.

    Science.gov (United States)

    Zhou, Dan; Peng, Tangjian; Zhou, Hongbo; Liu, Xueduan; Gu, Guohua; Chen, Miao; Qiu, Guanzhou; Zeng, Weimin

    2015-07-01

    Sulfate adenylyltransferase gene and 4Fe-4S ferredoxin gene are the key genes related to sulfur and iron oxidations during bioleaching system, respectively. In order to better understand the bioleaching and microorganism synergistic mechanism in chalcopyrite bioleaching by mixed culture of moderate thermophiles, expressions of the two energy metabolism genes and community dynamics of free and attached microorganisms were investigated. Specific primers were designed for real-time quantitative PCR to study the expression of these genes. Real-time PCR results showed that sulfate adenylyltransferase gene was more highly expressed in Sulfobacillus thermosulfidooxidans than that in Acidithiobacillus caldus, and expression of 4Fe-4S ferredoxin gene was higher in Ferroplasma thermophilum than that in S. thermosulfidooxidans and Leptospirillum ferriphilum. The results indicated that in the bioleaching system of chalcopyrite concentrate, sulfur and iron oxidations were mainly performed by S. thermosulfidooxidans and F. thermophilum, respectively. The community dynamics results revealed that S. thermosulfidooxidans took up the largest proportion during the whole period, followed by F. thermophilum, A. caldus, and L. ferriphilum. The CCA analysis showed that 4Fe-4S ferredoxin gene expression was mainly affected (positively correlated) by high pH and elevated concentration of ferrous ion, while no factor was observed to prominently influence the expression of sulfate adenylyltransferase gene.

  6. Tunable optical properties of ZnCdTe2-xSex(x =0.625) chalcopyrite for photovoltaics; a mBJLDA approach

    Science.gov (United States)

    Kashyap, Manish K.; Paudyal, D.; Harmon, B. N.

    In the present study, we have performed ab-initio simulations of sp-element defect in ZnCdTe2-xSex (x =0.625) chalcopyrite to check the tuning of band gap as compared to the pristine case. The exchange and correlation (XC) effects are taken into account by an orbital independent modified Becke-Johnson (mBJ) potential as coupled with Local Density Approximation (LDA) for these calculations. The calculated energy band structures show a direct band gap at the point in the brillouin zone for the pristine as well as the defected case and the band gap decreases with inclusion of sp-disorder. The imaginary dielectric function predicts the optical band gap of pristine ZnCdTe2 very close to the experimental value and the results are in reasonable agreement without applying any scissor operator. With inclusion of sp-element defect, the optical spectra is tuned to optimal region, suitable for photovoltaics. It is apparent that mBJ functional is well suited for calculating electronic structure of pristine as well as defected ZnCdTe2chalcopyrite. MKK acknowledges financial support from UGC, India in the form of RAMAN Post-doctoral fellowship. This work at Ames Laboratory was supported by the DOE, Office of Basic Energy Sciences, Materials Sciences Division under contract No. DE-AC02-07CH11358.

  7. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Saez-Araoz, R.; Abou-Ras, D. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Niesen, T.P. [AVANCIS GmbH and Co KG Otto-Hahn-Ring 6, 81739 Munich (Germany); Neisser, A.; Wilchelmi, K. [SULFURCELL Solartechnik GmbH Barbara-McClintock-Strasse 11, 12489 Berlin (Germany); Lux-Steiner, M.Ch. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany); Ennaoui, A. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Solar Energy Division, Glienicker Strasse 100, 14109 Berlin (Germany)], E-mail: ennaoui@helmholtz-berlin.de

    2009-02-02

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS{sub 2} (CIS) and Cu(In,Ga)(SSe){sub 2} (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules.

  8. In situ monitoring the growth of thin-film ZnS/Zn (S,O) bilayer on Cu-chalcopyrite for high performance thin film solar cells

    International Nuclear Information System (INIS)

    Saez-Araoz, R.; Abou-Ras, D.; Niesen, T.P.; Neisser, A.; Wilchelmi, K.; Lux-Steiner, M.Ch.; Ennaoui, A.

    2009-01-01

    This paper highlights the crucial role that the control of the chemical bath deposition (CBD) process plays for buffer production of Cu-chalcopyrite solar-cell devices. ZnS/Zn (S,O) bilayer was deposited on CuInS 2 (CIS) and Cu(In,Ga)(SSe) 2 (CIGSSe) and monitored using turbidity measurements of the solution. The results were correlated to the X-ray photoemission spectra of the samples obtained by interruption of the process at sequential stages. Two different feature regimes were distinguished: In the first stage, a heterogeneous reaction takes place on the absorber resulting in the formation of pure ZnS. The second stage of the process is homogeneous, and the in-situ turbidity measurement shows a loss in the transmission of light through the CBD solution. The measured ZnL3M45M45 Auger-peaks, during this second stage of the process, show a shift of the kinetic energy from pure ZnS to a solid-solution ZnS/ZnO ('Zn (S,O)') with decreasing amount of sulfur. These results are supported by the observations from Energy-filtered transmission electron microscopy. This paper also demonstrates that monitoring of the CBD process combined with the basic understanding using surface and interface analysis have contributed to improve the reproducibility and to enhance the photovoltaic performance of Cu-chalcopyrite thin-film solar modules

  9. Wake fields in semiconductor plasmas

    International Nuclear Information System (INIS)

    Berezhiani, V.I.; Mahajan, S.M.

    1994-05-01

    It is shown that an intense short laser pulse propagating through a semiconductor plasma will generated longitudinal Langmuir waves in its wake. The measurable wake field can be used as a diagnostic to study nonlinear optical phenomena. For narrow gap semiconductors (for examples InSb) with Kane-type dispersion relation, the system can simulate, at currently available laser powers, the physics underlying wake-field accelerators. (author). 9 refs, 1 fig

  10. Semiconductor research with reactor neutrons

    International Nuclear Information System (INIS)

    Kimura, Itsuro

    1992-01-01

    Reactor neutrons play an important role for characterization of semiconductor materials as same as other advanced materials. On the other hand reactor neutrons bring about not only malignant irradiation effects called radiation damage, but also useful effects such as neutron transmutation doping and defect formation for opto-electronics. Research works on semiconductor materials with the reactor neutrons of the Kyoto University Reactor (KUR) are briefly reviewed. In this review, a stress is laid on the present author's works. (author)

  11. Semiconductor crystal high resolution imager

    Science.gov (United States)

    Levin, Craig S. (Inventor); Matteson, James (Inventor)

    2011-01-01

    A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

  12. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  13. Reducing leakage current in semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Matioli, Elison de Nazareth; Palacios, Tomas Apostol

    2018-03-06

    A semiconductor device includes a first region having a first semiconductor material and a second region having a second semiconductor material. The second region is formed over the first region. The semiconductor device also includes a current blocking structure formed in the first region between first and second terminals of the semiconductor device. The current blocking structure is configured to reduce current flow in the first region between the first and second terminals.

  14. Optical orientation in ferromagnet/semiconductor hybrids

    International Nuclear Information System (INIS)

    Korenev, V L

    2008-01-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin–spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism

  15. Optical orientation in ferromagnet/semiconductor hybrids

    Science.gov (United States)

    Korenev, V. L.

    2008-11-01

    The physics of optical pumping of semiconductor electrons in ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of a ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of a semiconductor. Spin-spin interactions near the ferromagnet/semiconductor interface play a crucial role in the optical readout and the manipulation of ferromagnetism.

  16. Optical Orientation in Ferromagnet/Semiconductor Hybrids

    OpenAIRE

    Korenev, V. L.

    2008-01-01

    The physics of optical pumping of semiconductor electrons in the ferromagnet/semiconductor hybrids is discussed. Optically oriented semiconductor electrons detect the magnetic state of the ferromagnetic film. In turn, the ferromagnetism of the hybrid can be controlled optically with the help of the semiconductor. Spin-spin interactions near the interface ferromagnet/semiconductor play crucial role in the optical readout and the manipulation of ferromagnetism.

  17. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  18. Ripening of Semiconductor Nanoplatelets.

    Science.gov (United States)

    Ott, Florian D; Riedinger, Andreas; Ochsenbein, David R; Knüsel, Philippe N; Erwin, Steven C; Mazzotti, Marco; Norris, David J

    2017-11-08

    Ostwald ripening describes how the size distribution of colloidal particles evolves with time due to thermodynamic driving forces. Typically, small particles shrink and provide material to larger particles, which leads to size defocusing. Semiconductor nanoplatelets, thin quasi-two-dimensional (2D) particles with thicknesses of only a few atomic layers but larger lateral dimensions, offer a unique system to investigate this phenomenon. Experiments show that the distribution of nanoplatelet thicknesses does not defocus during ripening, but instead jumps sequentially from m to (m + 1) monolayers, allowing precise thickness control. We investigate how this counterintuitive process occurs in CdSe nanoplatelets. We develop a microscopic model that treats the kinetics and thermodynamics of attachment and detachment of monomers as a function of their concentration. We then simulate the growth process from nucleation through ripening. For a given thickness, we observe Ostwald ripening in the lateral direction, but none perpendicular. Thicker populations arise instead from nuclei that capture material from thinner nanoplatelets as they dissolve laterally. Optical experiments that attempt to track the thickness and lateral extent of nanoplatelets during ripening appear consistent with these conclusions. Understanding such effects can lead to better synthetic control, enabling further exploration of quasi-2D nanomaterials.

  19. A semiconductor laser device

    Energy Technology Data Exchange (ETDEWEB)

    Takaro, K.; Naoki, T.; Satosi, K.; Yasutosi, K.

    1984-03-17

    A device is proposed which makes it possible to obtain single vertical mode emission in the absence of noise. Noise suppression is achieved by a method which determines the relationship between the donor densities in the second and third layers of an n type semiconductor laser, and the total output optical emission of layers with respect to the emission from the entire laser. The device consists of a photoresist film with a window applied to a 100 GaAs n type conductivity substrate using a standard method. Chemical etching through this window in the substrate is used to generate a slot approximately 1 micrometer in size. After the photoresist film is removed, the following layers are deposited from the liquid phase onto the substrate in the sequence indicated: a telurium doped protective layer of n type AlxGa(1-x) As; 2) an undoped active p type AlyGa(1-6) As layer and a tellurium doped upper protective n type conductivity GaAs layer.

  20. Semiconductor integrated circuits

    International Nuclear Information System (INIS)

    Michel, A.E.; Schwenker, R.O.; Ziegler, J.F.

    1979-01-01

    An improved method involving ion implantation to form non-epitaxial semiconductor integrated circuits. These are made by forming a silicon substrate of one conductivity type with a recessed silicon dioxide region extending into the substrate and enclosing a portion of the silicon substrate. A beam of ions of opposite conductivity type impurity is directed at the substrate at an energy and dosage level sufficient to form a first region of opposite conductivity within the silicon dioxide region. This impurity having a concentration peak below the surface of the substrate forms a region of the one conductivity type which extends from the substrate surface into the first opposite type region to a depth between the concentration peak and the surface and forms a second region of opposite conductivity type. The method, materials and ion beam conditions are detailed. Vertical bipolar integrated circuits can be made this way when the first opposite type conductivity region will function as a collector. Also circuits with inverted bipolar devices when this first region functions as a 'buried'' emitter region. (U.K.)

  1. Impurity gettering in semiconductors

    Science.gov (United States)

    Sopori, Bhushan L.

    1995-01-01

    A process for impurity gettering in a semiconductor substrate or device such as a silicon substrate or device. The process comprises hydrogenating the substrate or device at the back side thereof with sufficient intensity and for a time period sufficient to produce a damaged back side. Thereafter, the substrate or device is illuminated with electromagnetic radiation at an intensity and for a time period sufficient to cause the impurities to diffuse to the back side and alloy with a metal there present to form a contact and capture the impurities. The impurity gettering process also can function to simultaneously passivate defects within the substrate or device, with the defects likewise diffusing to the back side for simultaneous passivation. Simultaneously, substantially all hydrogen-induced damage on the back side of the substrate or device is likewise annihilated. Also taught is an alternate process comprising thermal treatment after hydrogenation of the substrate or device at a temperature of from about 500.degree. C. to about 700.degree. C. for a time period sufficient to cause the impurities to diffuse to the damaged back side thereof for subsequent capture by an alloying metal.

  2. Semiconductor acceleration sensor

    Science.gov (United States)

    Ueyanagi, Katsumichi; Kobayashi, Mitsuo; Goto, Tomoaki

    1996-09-01

    This paper reports a practical semiconductor acceleration sensor especially suited for automotive air bag systems. The acceleration sensor includes four beams arranged in a swastika structure. Two piezoresistors are formed on each beam. These eight piezoresistors constitute a Wheatstone bridge. The swastika structure of the sensing elements, an upper glass plate and a lower glass plate exhibit the squeeze film effect which enhances air dumping, by which the constituent silicon is prevented from breakdown. The present acceleration sensor has the following features. The acceleration force component perpendicular to the sensing direction can be cancelled. The cross-axis sensitivity is less than 3 percent. And, the erroneous offset caused by the differences between the thermal expansion coefficients of the constituent materials can be canceled. The high aspect ratio configuration realized by plasma etching facilitates reducing the dimensions and improving the sensitivity of the acceleration sensor. The present acceleration sensor is 3.9 mm by 3.9 mm in area and 1.2 mm in thickness. The present acceleration sensor can measure from -50 to +50 G with sensitivity of 0.275 mV/G and with non-linearity of less than 1 percent. The acceleration sensor withstands shock of 3000 G.

  3. Ternary Fission of U235 by Resonance Neutrons

    International Nuclear Information System (INIS)

    Kvitek, I.; Popov, Ju.P.; Rjabov, Ju.V.

    1965-01-01

    Recently a number of papers have appeared indicating considerable variations in the ratio of the ternary-fission cross-section to the binary-fission cross-section of U 235 on transition from one neutron resonance to another. However, such variations have not been discovered in U 233 and Pu 239 . The paper reports investigations of the ternary fission of U 235 by neutrons with an energy of 0.1 to 30 eV. Unlike other investigators of the ternary fission of U 235 , we identified the ternary-fission event by the coincidence of one of the fission fragments with a light long-range particle. This made it passible to separate ternary fissions from the possible contribution of the (n, α)reaction. The measurements were performed at the fast pulsed reactor of the Joint Institute for Nuclear Research by the time-of-flight method. A flight length of 100 m was used, giving a resolution of 0.6 μs/m. Gas scintillation counters filled with xenon at a pressure of 2 atm were used to record the fission fragments and the light long-range particle. A layer of enriched U 235 ∼2 mg/cm 2 thick and ∼300 cm 2 in area was applied to an aluminium foil 20-fim thick. The scintillations from the fission fragments were recorded in the gas volume on one side of the foil and those from the light long-range particles in that on the other. In order to assess the background (e.g . coincidences of the pulse from a fragment with that from a fission gamma quantum or a proton from the (n, p) reaction in the aluminium foil), a measurement was carried out in which the volume recording the long-range particle was shielded with a supplementary aluminium filter 1-mm thick. The results obtained indicate the absence of the considerable variations in the ratio between the ternary-and binary- fission cross-sections for U 235 that have been noted by other authors. Measurements showed no irregularity in the ratio of the cross-sections in the energy range 0.1 to 0.2 eV. The paper discusses the possible effect of

  4. Semiconductor lasers stability, instability and chaos

    CERN Document Server

    Ohtsubo, Junji

    2017-01-01

    This book describes the fascinating recent advances made concerning the chaos, stability and instability of semiconductor lasers, and discusses their applications and future prospects in detail. It emphasizes the dynamics in semiconductor lasers by optical and electronic feedback, optical injection, and injection current modulation. Applications of semiconductor laser chaos, control and noise, and semiconductor lasers are also demonstrated. Semiconductor lasers with new structures, such as vertical-cavity surface-emitting lasers and broad-area semiconductor lasers, are intriguing and promising devices. Current topics include fast physical number generation using chaotic semiconductor lasers for secure communication, development of chaos, quantum-dot semiconductor lasers and quantum-cascade semiconductor lasers, and vertical-cavity surface-emitting lasers. This fourth edition has been significantly expanded to reflect the latest developments. The fundamental theory of laser chaos and the chaotic dynamics in se...

  5. Solution-based colloidal synthesis of hybrid P3HT: Ternary CuInSe2 nanocomposites using a novel combination of capping agents for low-cost photovoltaics

    Science.gov (United States)

    Sharma, Shailesh Narain; Chawla, Parul; Akanksha; Srivastava, A. K.

    2016-06-01

    In this work, ternary CuInSe2 (CISe) chalcopyrite nanocrystallites efficiently passivated by a novel combination of capping agents viz: aniline and 1-octadecene during chemical route synthesis were dispersed in conducting polymer matrix poly(3-hexylthiophene) (P3HT). By varying the composition and concentration of the ligands, the properties of the resulting CISe nanocrystallites and its corresponding polymer nanocomposites thus could be tailored. The structural, morphological and optical studies accomplished by various complimentary techniques viz. Transmission Electron Microscopy (TEM), Contact angle, Photoluminescence (PL) and Raman have enabled us to compare the different hybrid organic (polymer)-inorganic nanocomposites. On the basis of aniline-octadecene equilibrium phase diagram, the polydispersity of the CISe nanocrystals could be tuned by using controlled variations in the reaction conditions of nucleation and growth such as composition of the solvent and temperature. To the best of author's knowledge, the beneficial effects of both the capping agents; aniline and octadecene contributing well in tandem in the development of large-sized (100-125 nm) high quality, sterically- and photo-oxidative stable polycrystalline CISe and its corresponding polymer (P3HT):CISe composites with enhanced charge transfer efficiency has been reported for the first time. The low-cost synthesis and ease of preparation renders this method of great potential for its possible application in low-cost hybrid organic-inorganic photovoltaics. The figure shows the Temperature vs Mole fraction graph of two different phases (aniline and 1-octadecene) in equilibrium.

  6. Thermodynamic calculations in ternary titanium–aluminium–manganese system

    Directory of Open Access Journals (Sweden)

    ANA I. KOSTOV

    2008-04-01

    Full Text Available Thermodynamic calculations in the ternary Ti–Al–Mn system are shown in this paper. The thermodynamic calculations were performed using the FactSage thermochemical software and database, with the aim of determining thermodynamic properties, such as activities, coefficient of activities, partial and integral values of the enthalpies and Gibbs energies of mixing and excess energies at two different temperatures: 2000 and 2100 K. Bearing in mind that no experimental data for the Ti–Al–Mn ternary system have been obtained or reported. The obtained results represent a good base for further thermodynamic analysis and may be useful as a comparison with some future critical experimental results and thermodynamic optimization of this system.

  7. Ternary carbide uranium fuels for advanced reactor design applications

    International Nuclear Information System (INIS)

    Knight, Travis; Anghaie, Samim

    1999-01-01

    Solid-solution mixed uranium/refractory metal carbides such as the pseudo-ternary carbide, (U, Zr, Nb)C, hold significant promise for advanced reactor design applications because of their high thermal conductivity and high melting point (typically greater than 3200 K). Additionally, because of their thermochemical stability in a hot-hydrogen environment, pseudo-ternary carbides have been investigated for potential space nuclear power and propulsion applications. However, their stability with regard to sodium and improved resistance to attack by water over uranium carbide portends their usefulness as a fuel for advanced terrestrial reactors. An investigation into processing techniques was conducted in order to produce a series of (U, Zr, Nb)C samples for characterization and testing. Samples with densities ranging from 91% to 95% of theoretical density were produced by cold pressing and sintering the mixed constituent carbides at temperatures as high as 2650 K. (author)

  8. Experimental Investigation of Ternary Alloys for Fusion Breeding Blankets

    Energy Technology Data Exchange (ETDEWEB)

    Choi, B. William [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Chiu, Ing L. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-26

    Future fusion power plants based on the deuterium-tritium (DT) fuel cycle will be required to breed the T fuel via neutron reactions with lithium, which will be incorporated in a breeding blanket that surrounds the fusion source. Recent work by LLNL proposed the used of liquid Li as the breeder in an inertial fusion energy (IFE) power plant. Subsequently, an LDRD was initiated to develop alternatives ternary alloy liquid metal breeders that have reduced chemical reactivity with water and air compared to pure Li. Part of the work plan was to experimentally investigate the phase diagrams of ternary alloys. Of particular interest was measurement of the melt temperature, which must be low enough to be compatible with the temperature limits of the steel used in the construction of the chamber and heat transfer system.

  9. Reconstructing Unrooted Phylogenetic Trees from Symbolic Ternary Metrics.

    Science.gov (United States)

    Grünewald, Stefan; Long, Yangjing; Wu, Yaokun

    2018-03-09

    Böcker and Dress (Adv Math 138:105-125, 1998) presented a 1-to-1 correspondence between symbolically dated rooted trees and symbolic ultrametrics. We consider the corresponding problem for unrooted trees. More precisely, given a tree T with leaf set X and a proper vertex coloring of its interior vertices, we can map every triple of three different leaves to the color of its median vertex. We characterize all ternary maps that can be obtained in this way in terms of 4- and 5-point conditions, and we show that the corresponding tree and its coloring can be reconstructed from a ternary map that satisfies those conditions. Further, we give an additional condition that characterizes whether the tree is binary, and we describe an algorithm that reconstructs general trees in a bottom-up fashion.

  10. Ternary fission in an effective liquid drop model

    International Nuclear Information System (INIS)

    Duarte, Sergio B.; Tavares, Odilon A.P.; Dimarco, A.; Goncalves, Marcello; Guzman, Fernando; Trallero-Herrera, Carlos; Rodriguez, Oscar; Garcia, Fermin

    2001-01-01

    Full text follows: The nuclear partition in three fragments has been observed in recent experiments for fission process of 252 Cf and 24 '0 Pu. We apply the Effective Liquid Drop Model (ELDM), successfully used for discussing binary cold fission and cluster emissions for a three center geometric shape parametrization, describing the quasi-molecular deformation which can lead to ternary fragmentation. A preliminary calculation for rates of these processes are performed and the results are compared to the rate of the dominant binary fission process. A large range of parent nuclei (spherical and deformed) is covered in the calculation. The purpose is to point out others possible ternary fission process experimentally measurable. (author)

  11. Susceptibility of ternary aluminum alloys to cracking during solidification

    International Nuclear Information System (INIS)

    Liu, Jiangwei; Kou, Sindo

    2017-01-01

    The crack susceptibility map of a ternary Al alloy system provides useful information about which alloy compositions are most susceptible to cracking and thus should be avoided by using a filler metal with a significantly different composition. In the present study the crack susceptibility maps of ternary Al alloy systems were calculated based on the maximum |dT/d(f S ) 1/2 | as an index for the crack susceptibility, where T is temperature and f S fraction solid. Due to the complexity associated with ternary alloy solidification, commercial thermodynamic software Pandat and Al database PanAluminum, instead of analytical equations, were used to calculate f S as a function of T and hence the maximum |dT/d(f S ) 1/2 | for ternary Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si alloy systems. A crack susceptibility map covering 121 alloy compositions was constructed for each of the three ternary alloy systems at each of the following three levels of back diffusion: no back diffusion, back diffusion under a 100 °C/s cooling rate, and back diffusion under 20° C/s. The location of the region of high crack susceptibility, which is the most important part of the map, was shown in each of the nine calculated maps. These locations were compared with those observed in crack susceptibility tests by previous investigators. With back diffusion considered, either under 20 or 100 °C/s, the agreement between the calculated and observed maps was good especially for Al-Mg-Si and Al-Cu-Mg. Thus, the maximum |dT/d(f S ) 1/2 | can be used as a crack susceptibility index to construct crack susceptibility maps for ternary Al alloys and to evaluate the effect of back diffusion on their crack susceptibility. - Graphical abstract: The crack susceptibility map of a ternary alloy system indicates the composition range most susceptible to cracking, which should be avoided in welding or casting. The crack susceptibility maps of ternary Al alloy systems Al-Mg-Si, Al-Cu-Mg and Al-Cu-Si were calculated based

  12. Dynamical theory of subconstituents based on ternary algebras

    International Nuclear Information System (INIS)

    Bars, I.; Guenaydin, M.

    1980-01-01

    We propose a dynamical theory of possible fundamental constituents of matter. Our scheme is based on (super) ternary algebras which are building blocks of Lie (super) algebras. Elementary fields, called ''ternons,'' are associated with the elements of a (super) ternary algebra. Effective gauge bosons, ''quarks,'' and ''leptons'' are constructed as composite fields from ternons. We propose two- and four-dimensional (super) ternon theories whose structures are closely related to CP/sub N/ and Yang-Mills theories and their supersymmetric extensions. We conjecture that at large distances (low energies) the ternon theories dynamically produce effective gauge theories and thus may be capable of explaining the present particle-physics phenomenology. Such a scenario is valid in two dimensions

  13. Cohesion energy calculations for ternary ionic novel crystals

    International Nuclear Information System (INIS)

    Vazquez P, G.; Cabrera, E.; Mijangos, R.R.; Valdez, E.; Duarte, C.

    2001-01-01

    The present work calculates the value of the link energy of a crystalline ternary structure newly formed by alkali halides. The ternary structure prepared with different concentrations of KCl x KBrRbCl 2 maintains a very good miscibility and stability. The calculation is based on the use of a generalization of the Vegard law (which generally is valid for binary compounds) for calculating the values of the lattice constant and the repulsive m exponent. The value of the lattice parameter given by X-ray diffractometry agrees with the close approximation of the calculated value of the method used. It also compares the value of energy cohesion obtained by the Born expression with more complex approximations. (Author)

  14. Developing Low-Clinker Ternary Blends for Indian Cement Industry

    Science.gov (United States)

    Pal, Aritra

    2018-05-01

    In today's scenario cement-concrete has become the backbone of infrastructure development. The use of concrete is increasing day by day and so does cement. One of the major concerns is that the cement manufacturing contributes 7% of total man-made CO2 emission in the environment. At the same time India being a developing country secured the second position in cement production. On the other hand solid waste management is one of the growing problems in India. As we are one of the major contributors in this situation so, the time has come to think about the sustainable alternatives. From various researches it has been observed that the low clinker cement can be suitable option. In the present paper we have tried to develop a low clinker ternary blend for Indian cement industry using the concept of synergetic behavior of fly ash-limestone reaction and formation of more stable monocarboaluminate hydrate and hemicarboaluminate hydrate. 30% fly ash and 15% limestone and 5% gypsum have been used as supplementary cementing material for replacing 50% clinker. The mechanical properties like, compressive strength, have been studied for the fly ash limestone ternary blends cements and the results have been compared with the other controlled blends and ternary blends. The effect of intergrinding of constituent materials has shown a comparable properties which can be used for various structural application. The effect of dolomitic limestone has also been studied in fly ash limestone ternary blends and the result shows the relation between compressive strength and dolomite content is inversely proportional.

  15. Tetragonal ternary borides: superconductivity, ferromagnetism and the role of scandium

    International Nuclear Information System (INIS)

    Matthias, B.T.; Patel, C.K.N.; Barz, H.; Corenzwit, E.; Vandenberg, J.M.

    1978-01-01

    The authors report and discuss two discoveries made while studying the condensation phenomena of ternary rhodium borides, MRh 4 B 4 . M is generally a trivalent transition metal, usually a rare earth element RE. An exception is scandium which by itself does not form an isomorphous boride, but in combination with many other elements will do just that. A suprising correlation between ferromagnetic and superconducting transition temperatures has been found. (Auth.)

  16. Electronic structure of ternary hydrides based on light elements

    Energy Technology Data Exchange (ETDEWEB)

    Orgaz, E. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico)]. E-mail: orgaz@eros.pquim.unam.mx; Membrillo, A. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico); Castaneda, R. [Departamento de Fisica y Quimica Teorica, Facultad de Quimica, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico); Aburto, A. [Departamento de Fisica, Facultad de Ciencias, Universidad Nacional Autonoma de Mexico, CP 04510 Coyoacan, Mexico, D.F. (Mexico)

    2005-12-08

    Ternary hydrides based on light elements are interesting owing to the high available energy density. In this work we focused into the electronic structure of a series of known systems having the general formula AMH{sub 4}(A=Li,Na,M=B,Al). We computed the energy bands and the total and partial density of states using the linear-augmented plane waves method. In this report, we discuss the chemical bonding in this series of complex hydrides.

  17. New ternary oxides with rhenium(4) of the perovskite structure

    Energy Technology Data Exchange (ETDEWEB)

    Jezowska-Trzebiatowska, B; Nowakowski, T; Mrozinski, J [Wroclaw Univ. (Poland)

    1978-01-01

    A series of ternary oxides described by general formula CaIrsub(x)Resub(1-x)O/sub 3/, where x 0.25; 0.33; 0.66; 0.75, has been obtained. The X-ray investigations have shown, that these compounds have a distorted perovskite structure. The proximal coordination sphere of Re/sup 4 +/ and Ir/sup 4 +/ ions constituted by an octahedron of oxide ions was confirmed by the IR spectra.

  18. Thermoelectric properties of RuSb2Te ternary skutterudites

    Czech Academy of Sciences Publication Activity Database

    Navrátil, Jiří; Plecháček, T.; Drašar, Č.; Laufek, F.

    2013-01-01

    Roč. 42, č. 7 (2013), s. 1864-1869 ISSN 0361-5235 R&D Projects: GA ČR GAP108/10/1315 Institutional support: RVO:61389013 Keywords : RuSb2Te * ternary skutterudite * doping Subject RIV: CA - Inorganic Chemistry Impact factor: 1.675, year: 2013 http://link.springer.com/article/10.1007/s11664-012-2451-5

  19. Some new quasi-twisted ternary linear codes

    Directory of Open Access Journals (Sweden)

    Rumen Daskalov

    2015-09-01

    Full Text Available Let [n, k, d]_q code be a linear code of length n, dimension k and minimum Hamming distance d over GF(q. One of the basic and most important problems in coding theory is to construct codes with best possible minimum distances. In this paper seven quasi-twisted ternary linear codes are constructed. These codes are new and improve the best known lower bounds on the minimum distance in [6].

  20. Synthesis of Ternary Quantum Logic Circuits by Decomposition

    OpenAIRE

    Khan, Faisal Shah; Perkowski, Marek

    2005-01-01

    Recent research in multi-valued logic for quantum computing has shown practical advantages for scaling up a quantum computer. Multivalued quantum systems have also been used in the framework of quantum cryptography, and the concept of a qudit cluster state has been proposed by generalizing the qubit cluster state. An evolutionary algorithm based synthesizer for ternary quantum circuits has recently been presented, as well as a synthesis method based on matrix factorization.In this paper, a re...

  1. Development and application of high strength ternary boride base cermets

    International Nuclear Information System (INIS)

    Takagi, Ken-ichi

    2006-01-01

    Reaction boronizing sintering is a novel strategy to form a ternary boride coexisting with a metal matrix in a cermet during liquid phase sintering. This new sintering technique has successfully developed world first ternary boride base cermets with excellent mechanical properties such as Mo 2 FeB 2 , Mo 2 NiB 2 and WCoB base ones. In these cermets Mo 2 FeB 2 and Mo 2 NiB 2 base ones consist of a tetragonal M 3 B 2 (M: metal)-type complex boride as a hard phase and a transition metal base matrix. The cermets have already been applied to wear resistant applications such as injection molding machine parts, can making tools, and hot copper extruding dies, etc. This paper focuses on the characteristics, effects of the additional elements on the mechanical properties and structure, and practical applications of the ternary boride base cermets. - Graphical abstract: TRS and hardness of Ni-5B-51Mo-17.5Cr and Ni-5B-51Mo-12.5Cr-5V-xMn mass% cermets as functions of Mn content (Fig. 17)

  2. Phase Equilibria of Sn-Co-Cu Ternary System

    Science.gov (United States)

    Chen, Yu-Kai; Hsu, Chia-Ming; Chen, Sinn-Wen; Chen, Chih-Ming; Huang, Yu-Chih

    2012-10-01

    Sn-Co-Cu ternary alloys are promising lead-free solders, and isothermal sections of Sn-Co-Cu phase equilibria are fundamentally important for the alloys' development and applications. Sn-Co-Cu ternary alloys were prepared and equilibrated at 523 K, 1073 K, and 1273 K (250 °C, 800 °C, and 1000 °C), and the equilibrium phases were experimentally determined. In addition to the terminal solid solutions and binary intermetallic compounds, a new ternary compound, Sn3Co2Cu8, was found. The solubilities of Cu in the α-CoSn3 and CoSn2 phases at 523 K (250 °C) are 4.2 and 1.6 at. pct, respectively, while the Cu solubility in the α-Co3Sn2 phase is as high as 20.0 at. pct. The Cu solubility increases with temperature and is around 30.0 at. pct in the β-Co3Sn2 at 1073 K (800 °C). The Co solubility in the η-Cu6Sn5 phase is also significant and is 15.5 at. pct at 523 K (250 °C).

  3. Phase equilibria of the Mo-Al-Ho ternary system

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yitai; Chen, Xiaoxian; Liu, Hao [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Zhan, Yongzhong [Guangxi Univ., Nanning (China). College of Materials Science and Engineering; Guangxi Univ., Nanning (China). Guangxi Key Laboratory of Processing for Non-ferrous Metal and Featured Materials; Guangxi Univ., Nanning (China). Center of Ecological Collaborative Innovation for Aluminum Industry

    2017-08-15

    Investigation into the reactions and phase equilibria of transition metal elements (i.e. Mo, Zr, Cr, V and Ti), Al and rare earths is academically and industrially important for the development of both refractory alloys and lightweight high-temperature materials. In this work, the equilibria of the Mo-Al-Ho ternary system at 773 K have been determined by using X-ray powder diffraction and scanning electron microscopy equipped with energy dispersive X-ray analysis. A new ternary phase Al{sub 4}Mo{sub 2}Ho has been found and the other ternary phase Al{sub 43}Mo{sub 4}Ho{sub 6} is observed. Ten binary phases in the Al-Mo and Al-Ho systems, including Al{sub 17}Mo{sub 4} rather than Al{sub 4}Mo, have been determined to exist at 773 K. The homogeneity ranges of AlMo{sub 3} and Al{sub 8}Mo{sub 3} phase are 7.5 at.% and 1 at.%, respectively. According to the phase-disappearing method, the maximum solubility of Al in Mo is about 16 at.%.

  4. Valence band electronic structure of Pd based ternary chalcogenide superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Lohani, H. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India); Mishra, P. [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Goyal, R.; Awana, V.P.S. [National Physical Laboratory(CSIR), Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sekhar, B.R., E-mail: sekhar@iopb.res.in [Institute of Physics, Sachivalaya Marg, Bhubaneswar 751005 (India); Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai 400085 (India)

    2016-12-15

    Highlights: • VB Photoemission study and DFT calculations on Pd based ternary superconductors are presented. • Nb{sub 2}Pd{sub 0.95}S{sub 5} shows a temperature dependent pseudogap. • VB spectral features of ternary superconductors are correlated to their structural geometry. - Abstract: We present a comparative study of the valence band electronic structure of Pd based ternary chalcogenide superconductors Nb{sub 2}Pd{sub 0.95}S{sub 5}, Ta{sub 2}Pd{sub 0.97}S{sub 6} and Ta{sub 2}Pd{sub 0.97}Te{sub 6} using experimental photoemission spectroscopy and density functional based theoretical calculations. We observe a qualitatively similarity between valence band (VB) spectra of Nb{sub 2}Pd{sub 0.95}S{sub 5} and Ta{sub 2}Pd{sub 0.97}S{sub 6}. Further, we find a pseudogap feature in Nb{sub 2}Pd{sub 0.95}S{sub 5} at low temperature, unlike other two compounds. We have correlated the structural geometry with the differences in VB spectra of these compounds. The different atomic packing in these compounds could vary the strength of inter-orbital hybridization among various atoms which leads to difference in their electronic structure as clearly observed in our DOS calculations.

  5. Superconductivity of ternary metal compounds prepared at high pressures

    CERN Document Server

    Shirotani, I

    2003-01-01

    Various ternary metal phosphides, arsenides, antimonides, silicides and germanides have been prepared at high temperatures and high pressures. These ternary metal compounds can be classified into four groups: [1] metal-rich compounds MM' sub 4 X sub 2 and [2] MM'X, [3] non-metal-rich compounds MXX' and [4] MM' sub 4 X sub 1 sub 2 (M and M' = metal element; X and X' = non-metal element). We have studied the electrical and magnetic properties of these materials at low temperatures, and found many new superconductors with the superconducting transition temperature (T sub c) of above 10 K. The metal-rich compound ZrRu sub 4 P sub 2 with a tetragonal structure showed the superconducting transition at around 11 K, and had an upper critical field (H sub c sub 2) of 12.2 tesla (T) at 0 K. Ternary equiatomic compounds ZrRuP and ZrRuSi crystallize in two modifications, a hexagonal Fe sub 2 P-type structure [h-ZrRuP(Si)] and an orthorhombic Co sub 2 P-type structure [o-ZrRuP(Si)]. Both h-ZrRuP and h-ZrRuSi have rather h...

  6. Study on the solid state chemistry of ternary uranium oxides

    International Nuclear Information System (INIS)

    Yamashita, Toshiyuki

    1988-03-01

    With the increase of burnup of uranium oxide fuels, various kinds of fission products are formed, and the oxygen atoms combined with the consumed heavy atoms are freed. The solid state chemical and/or thermodynamic properties of these elements at high temperatures are complex, and have not been well clarified. In the present report, an approach was taken that the chemical interactions between UO 2 and these fission products can be regarded as causing overlapped effects of composing ternary uranium oxides, and formation reactions and phase behavior were studied for several ternary uranium oxides with typical fission product elements such as alkaline earth metals and rare earth elements. Precise determination methods for the composition of ternary uranium oxides were developed. The estimated accuracies for x and y values in M y U 1-y O 2+x were ± 0.006 and ± 0.004, respectively. The thermodynamic properties and the lattice parameters of the phases in the Ca-U-O and Pr-U-O systems were discussed in relation to the composition determined by the methods. Crystal structure analyses of cadmium monouranates were made with X-ray diffraction method. (author) 197 refs

  7. Realizing Ternary Logic in FPGAs for SWL DSP Systems

    Directory of Open Access Journals (Sweden)

    Tayeb Din

    2013-07-01

    Full Text Available Recently SWL (Short Word Length DSP (Digital Signal Processing applications has been proposed to overcome multiplier complexity that is evident in most of the digital applications. These SWL applications have been processed through sigma-delta modulation as a key element. For such applications, adder design plays vital role and can impact upon the chip area and its performance. In this paper, a ternary approach for adder tree has been proposed instead of binary that can accommodate more data with less chip-area at the cost of extra pin. The proposed ternary adder tree has been designed and developed in Quartus-II using three different design strategies namely T-gate (Ternary gate, LUT (Look Up Table and algebraic equations. Through rigorous simulation it was found that T-gate technique results in superior performance, an average of 23.5 and 33% improvement compared to the same adder structure based on Boolean Algebraic Equation and LUT, respectively. The proposed adder design would benefit the efficient implementation of SWL applications.

  8. Semiconductor optoelectronic infrared spectroscopy

    International Nuclear Information System (INIS)

    Hollingworth, A.R.

    2001-08-01

    We use spectroscopy to study infrared optoelectronic inter and intraband semiconductor carrier dynamics. The overall aim of this thesis was to study both III-V and Pb chalcogenide material systems in order to show their future potential use in infrared emitters. The effects of bandstructure engineering have been studied in the output characteristics of mid-IR III-V laser diodes to show which processes (defects, radiative, Auger and phonon) dominate and whether non-radiative processes can be suppressed. A new three-beam pump probe experiment was used to investigate interband recombination directly in passive materials. Experiments on PbSe and theory for non-parabolic near-mirror bands and non-degenerate statistics were in good agreement. Comparisons with HgCdTe showed a reduction in the Auger coefficient of 1-2 orders of magnitude in the PbSe. Using Landau confinement to model spatial confinement in quantum dots (QDs) 'phonon bottlenecking' was studied. The results obtained from pump probe and cyclotron resonance saturation measurements showed a clear suppression in the cooling of carriers when Landau level separation was not resonant with LO phonon energy. When a bulk laser diode was placed in a magnetic field to produce a quasi quantum wire device the resulting enhanced differential gain and reduced Auger recombination lowered I th by 30%. This result showed many peaks in the light output which occurred when the LO phonon energy was a multiple of the Landau level separation. This showed for the first time evidence of the phonon bottleneck in a working laser device. A new technique called time resolved optically detected cyclotron resonance, was used as a precursor to finding the carrier dynamics within a spatially confined quantum dot. By moving to the case of a spatial QD using an optically detected intraband resonance it was possible to measure the energy separation interband levels and conduction and valence sublevels within the dot simultaneously. Furthermore

  9. Simulation of semiconductor devices

    International Nuclear Information System (INIS)

    Oriato, D.

    2001-09-01

    In this thesis a drift diffusion model coupled with self-consistent solutions of Poisson's and Schroedinger's equations, is developed and used to investigate the operation of Gunn diodes and GaN-based LEDs. The model also includes parameters derived from Monte Carlo calculations of the simulated devices. In this way the characteristics of a Monte Carlo approach and of a quantum solver are built into a fast and flexible drift-diffusion model that can be used for testing a large number of heterostructure designs in a time-effective way. The full model and its numerical implementation are described in chapter 2. In chapter 3 the theory of Gunn diodes is presented. A basic model of the dynamics of domain formation and domain transport is described with particular regard to accumulation and dipole domains. Several modes of operation of the Gunn device are described, varying from the resonance mode to the quenched mode. Details about transferred electron devices and negative differential resistance in semiconductor materials are given. In chapter 4 results from the simulation of a simple conventional gunn device confirm the importance of the doping condition at the cathode. Accumulation or dipole domains are achieved respectively with high and low doping densities. The limits of a conventional Gunn diode are explained and solved by introducing the heterostructure Gunn diode. This new design consists of a conventional GaAs transit region coupled with an electron launcher at the cathode, made using an AIGaAs heterostructure step. Simulations show the importance of the insertion of a thin highly-doped layer between the transit region and the electron launcher in order to improve device operation. Chapter 5 is an introduction to Ill-nitrides, in particular GaN and its alloy ln-GaN. We outline the discrepancy in the elastic and piezoelectric parameters found in the literature. Strain, dislocations and piezoelectricity are presented as the main features of a InGaN/GaN system

  10. Ternary fission of 184466,476X formed in U + U collisions

    International Nuclear Information System (INIS)

    Karthikraj, C.; Subramanian, S.; Selvaraj, S.

    2016-01-01

    Recently, the very rare process of nuclear ternary fission has been of great interest in nuclear dynamics. Based on the statistical theory of fission, we discuss here the ternary-fission mass distribution of 184 466,476 X formed in low-energy U + U collisions for different heavy third fragments at T = 1 and 2 MeV. The expected ternary configurations 208 Pb + 208 Pb + 50 Ca and 204 Hg + 204 Hg + 58 Cr are obtained from the ternary fission of 184 466 X at T = 2 MeV. In addition, for both the systems, various possible ternary modes are listed for different heavy third fragments. Our results clearly indicate that the favored ternary configurations have either proton and/or neutron shell closure nucleus as one of their partners. (orig.)

  11. High pressure semiconductor physics I

    CERN Document Server

    Willardson, R K; Paul, William; Suski, Tadeusz

    1998-01-01

    Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tra...

  12. Introduction to cathodoluminescence in semiconductors

    International Nuclear Information System (INIS)

    Dussac, M.

    1985-01-01

    The use of cathodoluminescence in a scanning electron microscope leads to acquire a spectrum in a place of the sample surface, or to register the intensity profile of a special emission band along a scanning line, or also to realize a map of the irradiated sample. Composition variations can then, at ambient temperature, be determined, also defects can be shown, together with grain joints and dislocations, radiative and non radiative regions can be distinguished and, at low temperature, elementary processes of luminescence can be studied and impurities identified in semiconductors. Through this analysis method is applicable to every insulating or semiconductor material (that is to say to every material having a gap), in this article only crystalline semi-conductor will be studied [fr

  13. Catalysts, Protection Layers, and Semiconductors

    DEFF Research Database (Denmark)

    Chorkendorff, Ib

    2015-01-01

    Hydrogen is the simplest solar fuel to produce and in this presentation we shall give a short overview of the pros and cons of various tandem devices [1]. The large band gap semiconductor needs to be in front, but apart from that we can chose to have either the anode in front or back using either...... acid or alkaline conditions. Since most relevant semiconductors are very prone to corrosion the advantage of using buried junctions and using protection layers offering shall be discussed [2-4]. Next we shall discuss the availability of various catalysts for being coupled to these protections layers...... and how their stability may be evaluated [5, 6]. Examples of half-cell reaction using protection layers for both cathode and anode will be discussed though some of recent examples under both alkaline and acidic conditions. Si is a very good low band gap semiconductor and by using TiO2 as a protection...

  14. High mobility emissive organic semiconductor

    Science.gov (United States)

    Liu, Jie; Zhang, Hantang; Dong, Huanli; Meng, Lingqiang; Jiang, Longfeng; Jiang, Lang; Wang, Ying; Yu, Junsheng; Sun, Yanming; Hu, Wenping; Heeger, Alan J.

    2015-01-01

    The integration of high charge carrier mobility and high luminescence in an organic semiconductor is challenging. However, there is need of such materials for organic light-emitting transistors and organic electrically pumped lasers. Here we show a novel organic semiconductor, 2,6-diphenylanthracene (DPA), which exhibits not only high emission with single crystal absolute florescence quantum yield of 41.2% but also high charge carrier mobility with single crystal mobility of 34 cm2 V−1 s−1. Organic light-emitting diodes (OLEDs) based on DPA give pure blue emission with brightness up to 6,627 cd m−2 and turn-on voltage of 2.8 V. 2,6-Diphenylanthracene OLED arrays are successfully driven by DPA field-effect transistor arrays, demonstrating that DPA is a high mobility emissive organic semiconductor with potential in organic optoelectronics. PMID:26620323

  15. Thiophene-Based Organic Semiconductors.

    Science.gov (United States)

    Turkoglu, Gulsen; Cinar, M Emin; Ozturk, Turan

    2017-10-24

    Thiophene-based π-conjugated organic small molecules and polymers are the research subject of significant current interest owing to their potential use as organic semiconductors in material chemistry. Despite simple and similar molecular structures, the hitherto reported properties of thiophene-based organic semiconductors are rather diverse. Design of high performance organic semiconducting materials requires a thorough understanding of inter- and intra-molecular interactions, solid-state packing, and the influence of both factors on the charge carrier transport. In this chapter, thiophene-based organic semiconductors, which are classified in terms of their chemical structures and their structure-property relationships, are addressed for the potential applications as organic photovoltaics (OPVs), organic field-effect transistors (OFETs) and organic light emitting diodes (OLEDs).

  16. Analytical Electron Diffraction from Iii-V and II-Vi Semiconductors

    Science.gov (United States)

    Spellward, Paul

    Available from UMI in association with The British Library. This thesis describes the development and evaluation of a number of new TEM-based techniques for the measurement of composition in ternary III-V and II-VI semiconductors. New methods of polarity determination in binary and ternary compounds are also presented. The theory of high energy electron diffraction is outlined, with particular emphasis on zone axis diffraction from well-defined strings. An account of TEM microstructural studies of Cd_{rm x}Hg _{rm 1-x}Te and CdTe epitaxial layers, which provided the impetus for developing the diffraction-based analytical techniques, is given. The wide range of TEM-based compositional determination techniques is described. The use of HOLZ deficiency lines to infer composition from a lattice parameter measurement is evaluated. In the case of Cd_{ rm x}Hg_{rm 1-x}Te, it is found to be inferior to other techniques developed. Studies of dynamical aspects of HOLZ diffraction can yield information about the dispersion surface from which a measure of composition may be obtained. This technique is evaluated for Al_{rm x}Ga_{rm 1-x} As, in which it is found to be of some use, and for Cd_{rm x}Hg _{rm 1-x}Te, in which the large Debye-Waller factor associated with mercury in discovered to render the method of little value. A number of critical voltages may be measured in medium voltage TEMs. The (111) zone axis critical voltage of Cd_{rm x}Hg _{rm 1-x}Te is found to vary significantly with x and forms the basis of an accurate technique for composition measurement in that ternary compound. Other critical voltage phenomena are investigated. In Al _{rm x}Ga_ {rm 1-x}As and other light ternaries, a non-systematic critical voltage is found to vary with x, providing a good indicator of composition. Critical voltage measurements may be made by conventional CBED or by various other techniques, which may also simultaneously yield information on the spatial variation of composition. The

  17. High-field superconductivity in the Nb-Ti-Zr ternary system

    International Nuclear Information System (INIS)

    Ralls, K.M.; Rose, R.M.; Wulff, J.

    1980-01-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 0 K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys

  18. High-field superconductivity in the Nb-Ti-Zr ternary system

    Science.gov (United States)

    Ralls, K. M.; Rose, R. M.; Wulff, J.

    1980-06-01

    Resistive critical current densities, critical fields, and normal-state electrical resistivities were obtained at 4.2 °K for 55 alloys in the Nb-Ti-Zr ternary alloy system, excepting Ti-Zr binary compositions. The resistive critical field as a function of ternary composition has a saddle point between the Nb-Ti and Nb-Zr binaries, so that ternary alloying in this system is not expected to result in higher critical fields than the binary alloys.

  19. Zr-Fe-Sn Ternary System Phase Diagrams- New Experimental Results

    International Nuclear Information System (INIS)

    Nieva, N; Gomez, A; Arias, D

    2004-01-01

    New experimental results for the Zr-Fe-Sn ternary system are presented in this paper. The phases present and equilibrium relations for the 900 o C isothermal on the central zone of the Gibbs triangle are analysed. A set of ternary alloys was designed and obtained, and they were analysed by semi quantitative SEM- EDS, XRD, and metallographic samples. The resulting ternary phase diagrams are presented here (JCH)

  20. Experimental study of the ternary Ag-Cu-In phase diagram

    International Nuclear Information System (INIS)

    Bahari, Zahra; Elgadi, Mohamed; Rivet, Jacques; Dugue, Jerome

    2009-01-01

    The phase diagram of the Ag-Cu-In system was investigated using powder X-ray diffraction (XRD), differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). Two isothermal sections (at 510 and 607 deg. C) and 15 isopletic sections were studied. The results showed seven ternary peritectics, one ternary eutectic and one ternary metatectic. A complete reaction scheme was constructed, the valleys were drawn and the liquidus surfaces were derived from DSC data in the entire composition range.

  1. Experimental study of the ternary Ag-Cu-In phase diagram

    Energy Technology Data Exchange (ETDEWEB)

    Bahari, Zahra [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France); Laboratoire de chimie du solide mineral (LCSM), Faculte des sciences, Universite Mohamed 1er, Route Sidi Maafa, B.P. 524, Oujda, Maroc (Morocco); Elgadi, Mohamed [Laboratoire de chimie du solide mineral (LCSM), Faculte des sciences, Universite Mohamed 1er, Route Sidi Maafa, B.P. 524, Oujda, Maroc (Morocco); Rivet, Jacques [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France); Dugue, Jerome [Laboratoire de chimie physique et minerale, Faculte des sciences pharmaceutiques et biologiques, Universite Paris Descartes, avenue de l' Observatoire, 75006 Paris (France)], E-mail: jerome.dugue@univ-paris5.fr

    2009-05-27

    The phase diagram of the Ag-Cu-In system was investigated using powder X-ray diffraction (XRD), differential scanning calorimetry (DSC) and electron probe microanalysis (EPMA). Two isothermal sections (at 510 and 607 deg. C) and 15 isopletic sections were studied. The results showed seven ternary peritectics, one ternary eutectic and one ternary metatectic. A complete reaction scheme was constructed, the valleys were drawn and the liquidus surfaces were derived from DSC data in the entire composition range.

  2. Organic semiconductors in sensor applications

    CERN Document Server

    Malliaras, George; Owens, Róisín

    2008-01-01

    Organic semiconductors offer unique characteristics such as tunability of electronic properties via chemical synthesis, compatibility with mechanically flexible substrates, low-cost manufacturing, and facile integration with chemical and biological functionalities. These characteristics have prompted the application of organic semiconductors and their devices in physical, chemical, and biological sensors. This book covers this rapidly emerging field by discussing both optical and electrical sensor concepts. Novel transducers based on organic light-emitting diodes and organic thin-film transistors, as well as systems-on-a-chip architectures are presented. Functionalization techniques to enhance specificity are outlined, and models for the sensor response are described.

  3. Semiconductors and semimetals epitaxial microstructures

    CERN Document Server

    Willardson, Robert K; Beer, Albert C; Gossard, Arthur C

    1994-01-01

    Newly developed semiconductor microstructures can now guide light and electrons resulting in important consequences for state-of-the-art electronic and photonic devices. This volume introduces a new generation of epitaxial microstructures. Special emphasis has been given to atomic control during growth and the interrelationship between the atomic arrangements and the properties of the structures.Key Features* Atomic-level control of semiconductor microstructures* Molecular beam epitaxy, metal-organic chemical vapor deposition* Quantum wells and quantum wires* Lasers, photon(IR)detectors, heterostructure transistors

  4. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  5. Wide gap semiconductor microwave devices

    International Nuclear Information System (INIS)

    Buniatyan, V V; Aroutiounian, V M

    2007-01-01

    A review of properties of wide gap semiconductor materials such as diamond, diamond-like carbon films, SiC, GaP, GaN and AlGaN/GaN that are relevant to electronic, optoelectronic and microwave applications is presented. We discuss the latest situation and perspectives based on experimental and theoretical results obtained for wide gap semiconductor devices. Parameters are taken from the literature and from some of our theoretical works. The correspondence between theoretical results and parameters of devices is critically analysed. (review article)

  6. Detection of radioactivity by semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1991-01-01

    The class of detectors discussed in this chapter has a responsive component involving a diode, a junction between two types of semiconductor materials. Although diode detectors are not particularly efficient in counting radioactive emissions, they are superior to other commercially available detectors in spectroscopy. Consequently, diode detectors are used extensively for quanlitative purposes and for quantitative purposes when mixtures of radionuclides are present, not the usual situation with biological or medical research. Topics addressed in this chapter are as follows: Band Theory; Semiconductors and Junctions; and Radiation Detectors. 6 refs., 14 figs

  7. Modeling of semiconductor optical amplifiers

    DEFF Research Database (Denmark)

    Mørk, Jesper; Bischoff, Svend; Berg, Tommy Winther

    We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed.......We discuss the modelling of semiconductor optical amplifiers with emphasis on their high-speed properties. Applications in linear amplification as well as ultrafast optical signal processing are reviewed. Finally, the possible role of quantum-dot based optical amplifiers is discussed....

  8. Semiconductor X-ray spectrometers

    International Nuclear Information System (INIS)

    Muggleton, A.H.F.

    1978-02-01

    An outline is given of recent developments in particle and photon induced x-ray fluorescence (XRF) analysis. Following a brief description of the basic mechanism of semiconductor detector operation a comparison is made between semiconductor detectors, scintillators and gas filled proportional devices. Detector fabrication and cryostat design are described in more detail and the effects of various device parameters on system performance, such as energy resolution, count rate capability, efficiency, microphony, etc. are discussed. The main applications of these detectors in x-ray fluorescence analysis, electron microprobe analysis, medical and pollution studies are reviewed

  9. Integrating magnetism into semiconductor electronics

    Energy Technology Data Exchange (ETDEWEB)

    Zakharchenya, Boris P; Korenev, Vladimir L [A.F. Ioffe Physico-Technical Institute, Russian Academy of Sciences, St. Petersburg (Russian Federation)

    2005-06-30

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  10. Integrating magnetism into semiconductor electronics

    International Nuclear Information System (INIS)

    Zakharchenya, Boris P; Korenev, Vladimir L

    2005-01-01

    The view of a ferromagnetic-semiconducting hybrid structure as a single tunable system is presented. Based on an analysis of existing experiments it is shown that, contrary to a 'common sense', a nonmagnetic semiconductor is capable of playing an important role in controlling ferromagnetism. Magnetic properties of a hybrid (the hysteresis loop and the spatial orientation of magnetization) can be tuned both optically and electrically by utilizing semiconductor-making the hybrid an electronic-write-in and electronic-read-out elementary storage unit. (methodological notes)

  11. Semiconductor lasers and herterojunction leds

    CERN Document Server

    Kressel, Henry

    2012-01-01

    Semiconductor Lasers and Heterojunction LEDs presents an introduction to the subject of semiconductor lasers and heterojunction LEDs. The book reviews relevant basic solid-state and electromagnetic principles; the relevant concepts in solid state physics; and the p-n junctions and heterojunctions. The text also describes stimulated emission and gain; the relevant concepts in electromagnetic field theory; and the modes in laser structures. The relation between electrical and optical properties of laser diodes; epitaxial technology; binary III-V compounds; and diode fabrication are also consider

  12. First and second harmonic generation of the XAl{sub 2}Se{sub 4} (X=Zn,Cd,Hg) defect chalcopyrite compounds

    Energy Technology Data Exchange (ETDEWEB)

    Ouahrani, Tarik, E-mail: tarik_ouahrani@yahoo.fr [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P.230,13000 Tlemcen (Algeria); Ecole Preparatoire en Sciences et Techniques, Depertement de Physique EPST-T, Tlemcen 13000 (Algeria); Khenata, R. [Laboratoire de Physique Quantique et de Modelisation Mathematique (LPQ3M), Universite de Mascara, 29000 Mascara (Algeria); Lasri, B. [Laboratoire de Physique Theorique, Universite de Tlemcen, B.P.230,13000 Tlemcen (Algeria); Universite Dr Tahar Moulay de Saida, B.P. 138, Cite el Nasr, Saida 20000 (Algeria); Reshak, Ali H. [School of Complex systems, FFPW- South Bohemia University, Nove Hrady 37333 (Czech Republic); School of Material Engineering, Malaysia University of Perlis, P.O Box 77, d/a Pejabat Pos Besar, 01007 Kangar, Perlis (Malaysia); Bouhemadou, A. [Department of Physics, Faculty of Sciences, University of Setif, 19000 Setif (Algeria); Bin-Omran, S. [Department of Physics and Astronomy, Faculty of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia)

    2012-09-15

    The chemical bonding of the ZnAl{sub 2}Se{sub 4}, CdAl{sub 2}Se{sub 4} and HgAl{sub 2}Se{sub 4} defect chalcopyrites has been studied in the framework of the quantum theory of atoms in molecules (AIM). The GW quasi-particle approximation is used to correct the DFT-underestimation of energy gap, and as a consequence the linear and nonlinear optical properties are significantly enhanced. The second harmonic generation (SHG) displays certain dependence with the ionicity degree decrease through the dependency of the SHG on the band gap. The occurrence of the AIM saddle point is characterized and some clarifying features in relationship with the density topology are exposed, which enable to understand the relation with the second harmonic generation effect.

  13. Waveguide based external cavity semiconductor lasers

    NARCIS (Netherlands)

    Oldenbeuving, Ruud; Klein, E.J.; Offerhaus, Herman L.; Lee, Christopher James; Verhaegen, M.; Boller, Klaus J.

    2012-01-01

    We report on progress of the project waveguide based external cavity semiconductor laser (WECSL) arrays. Here we present the latest results on our efforts to mode lock an array of tunable, external cavity semiconductor lasers.

  14. Influence of phonons on semiconductor quantum emission

    Energy Technology Data Exchange (ETDEWEB)

    Feldtmann, Thomas

    2009-07-06

    A microscopic theory of interacting charge carriers, lattice vibrations, and light modes in semiconductor systems is presented. The theory is applied to study quantum dots and phonon-assisted luminescence in bulk semiconductors and heterostructures. (orig.)

  15. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  16. Fundamentals of semiconductors physics and materials properties

    CERN Document Server

    Yu, Peter Y

    2005-01-01

    Provides detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. This textbook emphasizes understanding the physical properties of Si and similar tetrahedrally coordinated semiconductors and features an extensive collection of tables of material parameters, figures, and problems.

  17. Nuclear radiation detection by a variband semiconductor

    International Nuclear Information System (INIS)

    Volkov, A.S.

    1981-01-01

    Possibilities of using a variband semiconductor for detecting nuclear radiations are considered. It is shown that the variaband quasielectric field effectively collects charges induced by a nuclear particle only at a small mean free path in the semiconductor (up to 100 μm), the luminescence spectrum of the variband semiconductor when a nuclear particle gets into it, in principle, permits to determine both the energy and mean free path in the semiconductor (even at large mean free paths) [ru

  18. Ultrafast THz Saturable Absorption in Doped Semiconductors

    DEFF Research Database (Denmark)

    Turchinovich, Dmitry; Hoffmann, Matthias C.

    2011-01-01

    We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields.......We demonstrate ultrafast THz saturable absorption in n-doped semiconductors by nonlinear THz time-domain spectroscopy. This effect is caused by the semiconductor conductivity modulation due to electron heating and satellite-valley scattering in strong THz fields....

  19. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  20. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.