Wear behavior of A356/M{sub 7}C{sub 3} and A356/SiC particulate metal matrix composites

Energy Technology Data Exchange (ETDEWEB)

Turhan, H. [Univ. of Firat, Dept. of Metallurgy, Elazig (Turkey); Yilmaz, O. [Univ. of Firat, Dept. of Metallurgical Engineering, Elazig (Turkey)

2002-06-01

The stability of M{sub 7}C{sub 3} carbides as reinforcement for A356 materials for tribological applications has been investigated. For this purpose, A356/M{sub 7}C{sub 3}, A356/SiC and A356/M{sub 7}C{sub 3}/SiC composites were prepared by powder metallurgy and tested at room temperature against SAE 4620 steel ring and AISI 304 stainless steel counterfaces under loads of 10 - 150 N. For comparison, also unreinforced A356 specimens were processed and tested under the same conditions. The tribological behavior was evaluated by microstructural examination of the wear-effected zones and by weight loss measurements of the specimens and counterfaces. The wear behavior of A356/M{sub 7}C{sub 3} composite gave an excellent result as function of the applied load because the M{sub 7}C{sub 3} particles act as load-bearing elements due to their excellent bonding to the Al matrix, and their interfaces withtood the wear stresses even at the highest applied load. Moreover, the M{sub 7}C{sub 3} particles limited the incorporation of wear debris into the Al matrix and reduced the wear damage occasioned to the steel counterfaces compared to that of A356 Al alloy. (orig.)

Reaction phases and diffusion paths in SiC/metal systems

Energy Technology Data Exchange (ETDEWEB)

Naka, M.; Fukai, T. [Osaka Univ., Osaka (Japan); Schuster, J.C. [Vienna Univ., Vienna (Austria)

2004-07-01

The interface structures between SiC and metal are reviewed at SiC/metal systems. Metal groups are divided to carbide forming metals and non-carbide forming metals. Carbide forming metals form metal carbide granular or zone at metal side, and metal silicide zone at SiC side. The further diffusion of Si and C from SiC causes the formation of T ternary phase depending metal. Non-carbide forming metals form silicide zone containing graphite or the layered structure of metal silicide and metal silicide containing graphite. The diffusion path between SiC and metal are formed along tie-lines connecting SiC and metal on the corresponding ternary Si-C-M system. The reactivity of metals is dominated by the forming ability of carbide or silicide. Te reactivity tendency of elements are discussed on the periodical table of elements, and Ti among elements shows the highest reactivity among carbide forming metals. For non-carbide forming metals the reactivity sequence of metals is Fe>Ni>Co. (orig.)

TiC/Ti3SiC2复合材料的制备及其性能研究%Preparation and properties of TiC/Ti3SiC2 composites

Institute of Scientific and Technical Information of China (English)

贾换; 尹洪峰; 袁蝴蝶; 杨祎诺

2012-01-01

以粉末Ti,Si,TiC和炭黑为原料,采用反应热压烧结法制备TiC/Ti3SiC2复合材料.借助XRD和SEM研究TiC含量对TiC/Ti3SiC2复合材料相组成、显微结构及力学特性的影响.结果表明:通过热压烧结可以得到致密度较高的TiC/Ti3SiC2复合材料；引入TiC可以促进Ti3SiC2的生成,当引入TiC的质量分数达30％,TiC/Ti3SiC2复合材料的弯曲强度和断裂韧性分别为406.9 MPa,3.7 MPa·m1/2；复合材料中Ti3SiC2相以穿晶断裂为主,TiC晶粒易产生拔出.%TiC/Ti3SiC2 composites were fabricated by reactive hot pressing sintering method using the mixture powder of Ti, Si, C and TiC as raw material. The effect of TiC content on phase composition, microstructure and mechanical properties of TiC/Ti3SiC2 composites was investigated by X-ray diffraction and scanning electron microscopy. The results demonstrate that dense TiC/ Ti3SiC2 composites can be obtained by hot pressing. The addition of TiC into composites can enhance the formation of TisSiC2. When the additional content of TiC reaches 30% (mass fraction) , the flexural strength and fracture toughness of TiC/Ti3SiC2 composite are 406.9 MPa and 3.7 MPa·m-2, respectively. Ti3SiC2 phase displays intergranular fracture and TiC grain pulls out from Ti3SiC2 matrix when TiC/Ti3SiC2 composite fractures.

Passivation of surface-nanostructured f-SiC and porous SiC

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang; Ou, Yiyu

The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

Mechanical Properties of SiC, Al2O3 Reinforced Aluminium 6061-T6 Hybrid Matrix Composite

Science.gov (United States)

Murugan, S. Senthil; Jegan, V.; Velmurugan, M.

2018-04-01

This paper contains the investigation of tensile, compression and impact characterization of SiC, Al2O3 reinforced Aluminium 6061-T6 matrix hybrid composite. Hybrid matrix composite fabrication was done by stir casting method. An attempt has been made by keeping Al2O3 percentage (7%) constant and increasing SiC percentage (10, 15, and 20%). After fabricating, the samples were prepared and tested to find out the various mechanical properties like tensile, compressive, and impact strength of the developed composites of different weight % of silicon carbide and Alumina in Aluminium alloy. The main objective of the study is to compare the values obtained and choose the best composition of the hybrid matrix composite from the mechanical properties point of view.

High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

Infrared spectrum and compressibility of Ti3GeC2 to 51 GPa

International Nuclear Information System (INIS)

Manoun, Bouchaib; Yang, H.; Saxena, S.K.; Ganguly, A.; Barsoum, M.W.; El Bali, B.; Liu, Z.X.; Lachkar, M.

2007-01-01

Using a synchrotron radiation source and a diamond anvil cell, we measured the pressure dependence of the lattice parameters of a polycrystalline Ti 3 GeC 2 sample up to a pressure of 51 GPa. No phase transformations were observed. Like Ti 3 SiC 2 , and most other compounds belonging to the same family of ternary carbides and nitrides, the so-called MAX phases, the compressibility of Ti 3 GeC 2 along the c axis is greater than that along the a axis. The bulk modulus is 197 ± 4 GPa, with a pressure derivative of 3.4 ± 0.1. We also characterized Ti 3 GeC 2 by infrared spectroscopy; four of the five expected infrared modes were observed for this material

Nanocrystalline SiC and Ti₃SiC₂ Alloys for Reactor Materials: Diffusion of Fission Product Surrogates

Energy Technology Data Exchange (ETDEWEB)

Henager, Charles H. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Jiang, Weilin [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

2014-11-01

MAX phases, such as titanium silicon carbide (Ti₃SiC₂), have a unique combination of both metallic and ceramic properties, which make them attractive for potential nuclear applications. Ti₃SiC₂ has been suggested in the literature as a possible fuel cladding material. Prior to the application, it is necessary to investigate diffusivities of fission products in the ternary compound at elevated temperatures. This study attempts to obtain relevant data and make an initial assessment for Ti₃SiC₂. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti₃SiC₂, SiC, and a dual-phase nanocomposite of Ti₃SiC₂/SiC synthesized at PNNL. Thermal annealing and in-situ Rutherford backscattering spectrometry (RBS) were employed to study the diffusivity of the various implanted species in the materials. In-situ RBS study of Ti₃SiC₂ implanted with Au ions at various temperatures was also performed. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti₃SiC₂ as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Further studies of the related materials are recommended.

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

Directory of Open Access Journals (Sweden)

Frederick Ojiemhende Ehiagwina

2016-09-01

Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

Introduction of nano-laminate Ti3SiC2 and SiC phases into Cf-C composite by liquid silicon infiltration method

Directory of Open Access Journals (Sweden)

Omid Yaghobizadeh

2017-03-01

Full Text Available The material Cf-C-SiC-Ti3SiC2 is promising for high temperature application. Due to the laminated structure and special properties, the Ti3SiC2 is one of the best reinforcements for Cf-C-SiC composites. In this paper, Cf-C-SiC-Ti3SiC2 composites were fabricated by liquid silicon infiltration (LSI method; the effect of the TiC amount on the various composites properties were studied. For samples with 0, 50 and 90 vol.% of TiC, the results show that bending strength are 168, 190, and 181 MPa; porosities are 3.2, 4.7, and 9%; the fracture toughness are 6.1, 8.9, and 7.8 MPa∙m1/2; interlaminar shear strength are 27, 36, and 30 MPa; the amount of the MAX phase are 0, 8.5, and 5.6 vol.%, respectively. These results show that amount of TiC is not the main effective parameter in synthesis of Ti3SiC2. The existence of carbon promotes the synthesis of Ti3SiC2 indicating that only sufficient carbon content can lead to the appearance of Ti3SiC2 in the LSI process.

Estudo da viabilidade de obtenção de cerâmicas de SiC por infiltração espontânea de misturas eutéticas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN Study of the viability to produce SiC ceramics by Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN spontaneous infiltration

Directory of Open Access Journals (Sweden)

G. C. R. Garcia

2008-06-01

Full Text Available As cerâmicas de carbeto de silício, SiC, apresentam excelentes propriedades quando obtidas por infiltração de determinados líquidos. Na infiltração o tempo de contato entre o líquido e o SiC a temperaturas elevadas é muito curto, diminuindo a probabilidade de formação dos produtos gasosos que interferem negativamente na resistência da peça final, como ocorre na sinterização via fase líquida. O objetivo deste trabalho é mostrar uma correlação entre molhabilidade e capacidade de infiltração de alguns aditivos em compactos de SiC. Foram preparados compactos de SiC por prensagem isostática a frio e posterior pré-sinterização via fase sólida. Nesses compactos foram infiltradas misturas de Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN, nas composições eutéticas, 10 ºC acima da temperatura de fusão das respectivas misturas por 4, 8 e 12 min. Após infiltração, as amostras foram analisadas quanto à densidade aparente e real, fases cristalinas, microestrutura e grau de infiltração, sendo que as amostras infiltradas com Y2O3-AlN apresentaram melhores resultados.Silicon carbide ceramics, SiC, obtained by liquid infiltration have shown excellent properties. In infiltration process the contact time of the liquid with SiC at elevated temperature is short, decreasing the probability to form gaseous products that contribute negatively in the final product properties. This phenomenon occurs during SiC liquid phase sintering. The purpose of the present study was to investigate the correlation between wettability and infiltration tendency of some additives in SiC compacts. SiC compacts were prepared by cold isostatic pressing followed by solid phase pre-sintering. Into the compacts were introduced Y2O3-AlN, Y2O3-Al2O3, R2O3-AlN liquids with eutectic compositions at a temperature 10 ºC higher than the melting point of each mixture for 4, 8 and 12 min. Before infiltration, the samples were analyzed by determining densities, crystalline phases

Extended vapor-liquid-solid growth of silicon carbide nanowires.

Science.gov (United States)

Rajesh, John Anthuvan; Pandurangan, Arumugam

2014-04-01

We developed an alloy catalytic method to explain extended vapor-liquid-solid (VLS) growth of silicon carbide nanowires (SiC NWs) by a simple thermal evaporation of silicon and activated carbon mixture using lanthanum nickel (LaNi5) alloy as catalyst in a chemical vapor deposition process. The LaNi5 alloy binary phase diagram and the phase relationships in the La-Ni-Si ternary system were play a key role to determine the growth parameters in this VLS mechanism. Different reaction temperatures (1300, 1350 and 1400 degrees C) were applied to prove the established growth process by experimentally. Scanning electron microscopy and transmission electron microscopy studies show that the crystalline quality of the SiC NWs increases with the temperature at which they have been synthesized. La-Ni alloyed catalyst particles observed on the top of the SiC NWs confirms that the growth process follows this extended VLS mechanism. The X-ray diffraction and confocal Raman spectroscopy analyses demonstrate that the crystalline structure of the SiC NWs was zinc blende 3C-SiC. Optical property of the SiC NWs was investigated by photoluminescence technique at room temperature. Such a new alloy catalytic method may be extended to synthesis other one-dimensional nanostructures.

Fission-product SiC reaction in HTGR fuel

International Nuclear Information System (INIS)

Montgomery, F.

1981-01-01

The primary barrier to release of fission product from any of the fuel types into the primary circuit of the HTGR are the coatings on the fuel particles. Both pyrolytic carbon and silicon carbide coatings are very effective in retaining fission gases under normal operating conditions. One of the possible performance limitations which has been observed in irradiation tests of TRISO fuel is chemical interaction of the SiC layer with fission products. This reaction reduces the thickness of the SiC layer in TRISO particles and can lead to release of fission products from the particles if the SiC layer is completely penetrated. The experimental section of this report describes the results of work at General Atomic concerning the reaction of fission products with silicon carbide. The discussion section describes data obtained by various laboratories and includes (1) a description of the fission products which have been found to react with SiC; (2) a description of the kinetics of silicon carbide thinning caused by fission product reaction during out-of-pile thermal gradient heating and the application of these kinetics to in-pile irradiation; and (3) a comparison of silicon carbide thinning in LEU and HEU fuels

Carbides crystalline structure of AISI M2 high-speed steel

International Nuclear Information System (INIS)

Serna, M.M.; Galego, E.; Rossi, J.L.

2005-01-01

The aim of this study was to identify the crystallographic structure of the extracted carbides of AISI M2 steel spray formed The structure determination of these carbides. The structure determination of these carbides is a very hard work. Since these structures were formed by atom migration it is not possible to reproduce them by a controlled process with a determined chemical composition. The solution of this problem is to obtain the carbide by chemical extraction from the steel. (Author)

Preparation and characterization of the electrodeposited Cr-Al{sub 2}O{sub 3}/SiC composite coating

Energy Technology Data Exchange (ETDEWEB)

Gao Jifeng, E-mail: readlot@tom.com [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Suo Jinping, E-mail: jpsuo@yahoo.com.cn [State Key Laboratory of Mould Technology, Institute of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2011-09-01

To increase the SiC content in Cr-based coatings, Cr-Al{sub 2}O{sub 3}/SiC composite coatings were plated in Cr(VI) baths which contained Al{sub 2}O{sub 3}-coated SiC powders. The Al{sub 2}O{sub 3}-coated SiC composite particles were synthesized by calcining the precursor prepared by heterogeneous deposition method. The transmission electron microscopy analysis of the particles showed that the nano-SiC particle was packaged by alumina. The zeta potential of the particles collected from the bath was up to +23 mV, a favorable condition for the co-deposition of the particles and chromium. Pulse current was used during the electrodeposition. Scanning Electron Microscopy (SEM) indicated that the coating was compact and combined well with the substrate. Energy dispersive X-ray analysis of Cr-Al{sub 2}O{sub 3}/SiC coatings demonstrated that the concentration of SiC in the coating reached about 2.5 wt.%. The corrosion behavior of the composite coating was studied by potentiodynamic polarization and electrochemical impedance spectroscopy techniques. The data obtained suggested that the Al{sub 2}O{sub 3}/SiC particles significantly enhanced the corrosion resistance of the composite coating in 0.05 M HCl solution.

The carbide M7C3 in low-temperature-carburized austenitic stainless steel

International Nuclear Information System (INIS)

Ernst, Frank; Li, Dingqiang; Kahn, Harold; Michal, Gary M.; Heuer, Arthur H.

2011-01-01

Prolonged low-temperature gas-phase carburization of AISI 316L-type austenitic stainless steel can cause intragranular precipitation of the carbide M 7 C 3 (M: randomly dispersed Fe, Cr, Ni). Transmission electron microscopy revealed that the carbide particles have the shape of needles. They grow by a ledge-migration mechanism and in a crystallographic orientation relationship to the austenite matrix that enables highly coherent interphase interfaces. A small solubility limit of Ni in the carbide and restricted Ni diffusivity at the processing temperature leads to Ni pileup around the particles and may explain the extreme aspect ratio of the particle shape. These characteristics closely resemble what has been observed earlier for precipitates of M 5 C 2 under slightly different processing conditions and can be rationalized by considering the particular constraints imposed by carburization at low temperature.

Theoretical study of physical properties and oxygen incorporation effect in nanolaminated ternary carbides 211-MAX phases

KAUST Repository

Kanoun, Mohammed; Goumri-Said, Souraya

2012-01-01

In this chapter, we employ ab initio approaches to review some important physical properties of nanolaminated ternary carbides MAX phases. We fi rstly use an all electron full-potential linearized augmented plane-wave method within the generalized

Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments

Science.gov (United States)

Scardelletti, Maximilian C.; Karnick, David A.; Ponchak, George E.; Zorman, Christian A.

2011-01-01

In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma

Silicon Carbide (SiC) Device and Module Reliability, Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field

Science.gov (United States)

2016-05-01

AFRL-RQ-WP-TR-2016-0108 SILICON CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled...CARBIDE (SiC) DEVICE AND MODULE RELIABILITY Performance of a Loop Heat Pipe Subjected to a Phase-Coupled Heat Input to an Acceleration Field 5a...Shukla, K., “Thermo-fluid dynamics of Loop Heat Pipe Operation,” International Communications in Heat and Mass Transfer , Vol. 35, No. 8, 2008, pp

The ternary system nickel-nobium-carbon

International Nuclear Information System (INIS)

Stadelmaier, H.H.; Fiedler, M.L.

1975-01-01

The ternary system nickel-niobium-carbon was studied by metallographic and X-ray diffraction methods to produce a liquidus projection and an isothermal section at 1,100 0 C. The liquidus projection is dominated by a wide field of primary NbC that extends far into the nickel corner of the composition triangle. Only one ternary compound is observed in this system, an eta-carbide formed in a peritectoid reaction. It has a narrow homogeneity range at Ni 2 Nb 4 C, and its lattice constant in alloys quenched from 1,100 0 C varies between 11.659 and 11.667 A. No eta-carbide Ni 3 Nb 3 C or Ni 6 Nb 6 could be detected. (orig.) [de

Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

Science.gov (United States)

Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

2004-05-01

In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

Fabrication of SiC nanopillars by inductively coupled SF6/O2 plasma etching

International Nuclear Information System (INIS)

Choi, J H; Bano, E; Latu-Romain, L; Dhalluin, F; Chevolleau, T; Baron, T

2012-01-01

In this paper, we demonstrate a top-down fabrication technique for nanometre scale silicon carbide (SiC) pillars using inductively coupled plasma etching. A set of experiments in SF 6 -based plasma was carried out in order to realize high aspect ratio SiC nanopillars. The etched SiC nanopillars using a small circular mask pattern (115 nm diameter) show high aspect ratio (7.4) with a height of 2.2 µm at an optimum bias voltage (300 V) and pressure (6 mTorr). Under the optimal etching conditions using a large circular mask pattern with 370 nm diameter, the obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 µm). The etch characteristic of the SiC nanopillars under these conditions shows a high etch rate (550 nm min -1 ) and a high selectivity (over 60 for Ni). We also studied the etch profile of the SiC nanopillars and mask evolution over the etching time. As the mask pattern size shrinks in nanoscale, vertical and lateral mask erosion plays a crucial role in the etch profile of the SiC nanopillars. Long etching process makes the pillars appear with a hexagonal shape, coming from the crystallographic structure of α-SiC. It is found that the feature of pillars depends not only on the etching process parameters, but also on the crystallographic structure of the SiC phase. (paper)

Oxidation of SiC cladding under Loss of Coolant Accident (LOCA) conditions in LWRs

International Nuclear Information System (INIS)

Lee, Y.; Yue, C.; Arnold, R. P.; McKrell, T. J.; Kazimi, M. S.

2012-01-01

An experimental assessment of Silicon Carbide (SiC) cladding oxidation rate in steam under conditions representative of Loss of Coolant Accidents (LOCA) in light water reactors (LWRs) was conducted. SiC oxidation tests were performed with monolithic alpha phase tubular samples in a vertical quartz tube at a steam temperature of 1140 deg. C and steam velocity range of 1 to 10 m/sec, at atmospheric pressure. Linear weight loss of SiC samples due to boundary layer controlled reaction of silica scale (SiO 2 volatilization) was experimentally observed. The weight loss rate increased with increasing steam flow rate. Over the range of test conditions, SiC oxidation rates were shown to be about 3 orders of magnitude lower than the oxidation rates of zircaloy 4. A SiC volatilization correlation for developing laminar flow in a vertical channel is formulated. (authors)

Synthesis of microsphere silicon carbide/nanoneedle manganese oxide composites and their electrochemical properties as supercapacitors

Science.gov (United States)

Kim, Myeongjin; Yoo, Youngjae; Kim, Jooheon

2014-11-01

Synthesis of microsphere silicon carbide/nanoneedle MnO2 (SiC/N-MnO2) composites for use as high-performance materials in supercapacitors is reported herein. The synthesis procedure involves the initial treatment of silicon carbide (SiC) with hydrogen peroxide to obtain oxygen-containing functional groups to provide anchoring sites for connection of SiC and the MnO2 nanoneedles (N-MnO2). MnO2 nanoneedles are subsequently formed on the SiC surface. The morphology and microstructure of the as-prepared composites are characterized via X-ray diffractometry, field-emission scanning electron microscopy, thermogravimetric analysis, and X-ray photoelectron spectroscopy. The characterizations indicate that MnO2 nanoneedles are homogeneously formed on the SiC surface in the composite. The capacitive properties of the as-prepared SiC/N-MnO2 electrodes are evaluated using cyclic voltammetry, galvanostatic charge/discharge testing, and electrochemical impedance spectroscopy in a three-electrode experimental setup using a 1-M Na2SO4 aqueous solution as the electrolyte. The SiC/N-MnO2(5) electrode, for which the MnO2/SiC feed ratio is 5:1, displays a specific capacitance as high as 273.2 F g-1 at 10 mV s-1.

Porous silicon carbide (SIC) semiconductor device

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1996-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Growth and structure of carbide nanorods

International Nuclear Information System (INIS)

Lieber, C.M.; Wong, E.W.; Dai, H.; Maynor, B.W.; Burns, L.D.

1996-01-01

Recent research on the growth and structure of carbide nanorods is reviewed. Carbide nanorods have been prepared by reacting carbon nanotubes with volatile transition metal and main group oxides and halides. Using this approach it has been possible to obtain solid carbide nanorods of TiC, SiC, NbC, Fe 3 C, and BC x having diameters between 2 and 30 nm and lengths up to 20 microm. Structural studies of single crystal TiC nanorods obtained through reactions of TiO with carbon nanotubes show that the nanorods grow along both [110] and [111] directions, and that the rods can exhibit either smooth or saw-tooth morphologies. Crystalline SiC nanorods have been produced from reactions of carbon nanotubes with SiO and Si-iodine reactants. The preferred growth direction of these nanorods is [111], although at low reaction temperatures rods with [100] growth axes are also observed. The growth mechanisms leading to these novel nanomaterials have also been addressed. Temperature dependent growth studies of TiC nanorods produced using a Ti-iodine reactant have provided definitive proof for a template or topotactic growth mechanism, and furthermore, have yielded new TiC nanotube materials. Investigations of the growth of SiC nanorods show that in some cases a catalytic mechanism may also be operable. Future research directions and applications of these new carbide nanorod materials are discussed

The effect of carbon mole ratio on the fabrication of silicon carbide

Directory of Open Access Journals (Sweden)

Sutham Niyomwas

2008-03-01

Full Text Available Silicon Carbide (SiC particles were synthesized by self-propagating high temperature synthesis (SHS from a powder mixture of SiO2-C-Mg. The reaction was carried out in a SHS reactor under static argon gas at a pressure of 0.5 MPa. The standard Gibbs energy minimization method was used to calculate the equilibrium composition of the reacting species. The effects of carbon mole ratio on the precursor mixture (C/SiO2/Mg: 1/1/2 to 3/1/2 and on the SiC conversion were investigated using X-ray diffraction and scanning electron microscope technique. The as-synthesized products of SiC-MgO powders were leached with 0.1M HCl acid solution to obtain the SiC particles.

Design and analysis of 2T-2M Ternary content addressable memories

KAUST Repository

Bahloul, M. A.; Fouda, M. E.; Naous, Rawan; Zidan, Mohammed A.; Eltawil, A. M.; Kurdahi, F.; Salama, Khaled N.

2017-01-01

Associate and approximate computing using resistive memory based Ternary Content Addressable Memory is becoming widely used. In this paper, a simplified model based analysis of a 2T2M-Ternary Content Addressable Memory using memristors is introduced. A comprehensive study is presented taking into consideration different circuit parameters and parasitic effects. Parameters such as the memristor Rh/Rl ratio, transistor technology, operating frequency, and memory width are taken into consideration. The proposed model is verified with SPICE showing a high degree of matching between theory and simulation. The utility of the model is established using a design example.

Design and analysis of 2T-2M Ternary content addressable memories

KAUST Repository

Bahloul, M. A.

2017-10-24

Associate and approximate computing using resistive memory based Ternary Content Addressable Memory is becoming widely used. In this paper, a simplified model based analysis of a 2T2M-Ternary Content Addressable Memory using memristors is introduced. A comprehensive study is presented taking into consideration different circuit parameters and parasitic effects. Parameters such as the memristor Rh/Rl ratio, transistor technology, operating frequency, and memory width are taken into consideration. The proposed model is verified with SPICE showing a high degree of matching between theory and simulation. The utility of the model is established using a design example.

Phase equilibria in M-X-X' and M-Al-X ternary systems (M-transition metal, X,X'-B,C,N,Si) and crystal chemistry of ternary compounds

International Nuclear Information System (INIS)

Gusev, A.I.

1996-01-01

The data on phase equilibria in the M-X-X' and M-Al-X ternary systems (M-transition metal of 3 to 8 groups, X-B,C, N, Si) have been considered and summarized. modern oxygen-free advanced ceramics is based on these ternary systems. Phase diagrams of the 130 ternary systems have been discussed, more than two hundred ternary phases forming in these systems have been systematized and described. The typical crystal structures of ternary compounds and phase have been considered, the common and distinctive features of these structures have been analysed. It has been shown that the ternary compounds with octahedral atomic groups XM 6 have a regions of homogeneity. Refs. 240

Report on the Fracture Analysis of HfB(sub 2)-SiC and ZrB(sub 2)-SiC Composites; TOPICAL

International Nuclear Information System (INIS)

MECHOLSKY, JR. JOHN J.

2001-01-01

Hafnium diboride-silicon carbide (HS) and zirconium diboride-silicon carbide (ZS) composites are potential materials for high temperature, thermal shock applications such as for components on re-entry vehicles. In order to establish material constants necessary for evaluation of in situ fracture, bars fractured in four-point flexure were examined using fractographic principles. The fracture toughness was determined from measurements of the critical crack sizes and the strength values and the crack branching constants were established to use in forensic fractography for future in-flight tests. The fracture toughnesses range from about 13 MPam(sup 1/2) at room temperature to about 6 MPam(sup 1/2) at 1400 C for ZrB(sub 2)-Sic composites and from about 13 MPam(sup 1/2) at room temperature to about 4 MPam(sup 1/2) at 1400 C for HfB(sub 2)-SiC composites. Thus, the toughnesses of either the HS or ZS composites have the potential for use in thermal shock applications. Processing and manufacturing defects limited the strength of the test bars. However, examination of the microstructure on the fracture surfaces shows that the processing of these composites can be improved. There is potential for high toughness composites with high strength to be used in thermal shock conditions if the processing and handling are controlled

The carbide M{sub 7}C{sub 3} in low-temperature-carburized austenitic stainless steel

Energy Technology Data Exchange (ETDEWEB)

Ernst, Frank, E-mail: frank.ernst@cwru.edu [Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7204 (United States); Li, Dingqiang; Kahn, Harold; Michal, Gary M.; Heuer, Arthur H. [Department of Materials Science and Engineering, Case Western Reserve University, Cleveland, OH 44106-7204 (United States)

2011-04-15

Prolonged low-temperature gas-phase carburization of AISI 316L-type austenitic stainless steel can cause intragranular precipitation of the carbide M{sub 7}C{sub 3} (M: randomly dispersed Fe, Cr, Ni). Transmission electron microscopy revealed that the carbide particles have the shape of needles. They grow by a ledge-migration mechanism and in a crystallographic orientation relationship to the austenite matrix that enables highly coherent interphase interfaces. A small solubility limit of Ni in the carbide and restricted Ni diffusivity at the processing temperature leads to Ni pileup around the particles and may explain the extreme aspect ratio of the particle shape. These characteristics closely resemble what has been observed earlier for precipitates of M{sub 5}C{sub 2} under slightly different processing conditions and can be rationalized by considering the particular constraints imposed by carburization at low temperature.

New ternary ordered structures in CuMPt6 (M=3d elements) alloys

International Nuclear Information System (INIS)

Das, Ananda Kumar; Nakamura, Reo; Takahashi, Miwako; Ohshima, Ken-ichi; Iwasaki, Hiroshi; Shishido, Toetsu

2006-01-01

X-ray and electron diffraction measurements were performed to investigate the structure and ordering behaviour of the ternary alloys CuMPt 6 (M=Ti, V, Cr, Mn, Fe, Co, and Ni). X-ray polycrystalline diffraction patterns of all the speciments quenched from 1000degC have shown that a single phase is formed at this stoichiometric composition. The alloys with M=Cr, Mn, Co, and Ni have the face-centred cubic (fcc) structure, while in the alloys with M=Ti, V, and Fe ordering has occurred and the structure is of the Cu 3 Au type. On annealing at lower temperatures ordering has been induced in the alloys with M=Cr, Mn, and Co and the structure is of the Cu 3 Au type, though the ordering in the last alloy has remained incomplete. Detailed X-ray diffraction measurements on single crystals of the CuMnPt 6 alloy have revealed that further ordering takes place and structure changes from the Cu 3 Au type into the cubic ABC 6 type with the unit cell as large 2 x 2 x 2 as the fcc unit cell, a new observation of the double-step ordering in the ternary fcc alloy. The corresponding transition temperatures are T c =970(±5)degC and T cl =750(±5)degC. (author)

Theoretical study of physical properties and oxygen incorporation effect in nanolaminated ternary carbides 211-MAX phases

KAUST Repository

Kanoun, Mohammed

2012-01-01

In this chapter, we employ ab initio approaches to review some important physical properties of nanolaminated ternary carbides MAX phases. We fi rstly use an all electron full-potential linearized augmented plane-wave method within the generalized gradient approximation and the density functional theory approaches, to explore the existence of a steric effect on the M site in these compounds. The elastic properties are also reported in order to assess the mechanical stability. The substitution of oxygen for carbon in Ti 2 SnC M n +1 AX n, forming Ti 2 SnC 1- x O x, is examined next, where we simulated the effect of oxygen incorporation on mechanical and electronic properties using projector augmented wave method. We show that oxygen has interesting effects on both of elastic and electronic properties, that the bulk modulus decreases when oxygen concentration increases. The bonding in Ti 2 SnC 1- x O x has a tendency to a covalent-ionic nature with the presence of metallic character. © 2012 Woodhead Publishing Limited.

Effect of Reactant Concentration on the Microstructure of SiC Nano wires Grown In Situ within SiC Fiber Preforms

International Nuclear Information System (INIS)

Kim, Weon Ju; Kang, Seok Min; Park, Ji Yeon; Ryu, Woo Seog

2006-01-01

Silicon carbide fiber-reinforced silicon carbide matrix (SiC f /SiC) composites are considered as advanced materials for control rods and other in-core components of high-temperature gas cooled reactors. Although the carbon fiber-reinforced carbon matrix (C f /C) composites are more mature and have advantages in cost, manufacturability and some thermomechanical properties, the SiC f /SiC composites have a clear advantage in irradiation stability, specifically a lower level of swelling and retention of mechanical properties. This offers a lifetime component for control rod application to HTGRs while the Cf/C composites would require 2-3 replacements over the reactor lifetime. In general, the chemical vapor infiltration (CVI) technique has been used most widely to produce SiC f /SiC composites. Although the technique produces a highly pure SiC matrix, it requires a long processing time and inevitably contains large interbundle pores. The present authors have recently developed 'whisker growing-assisted process,' in which one-dimensional SiC nano structures with high aspect ratios such as whiskers, nano wires and nano rods are introduced into the fiber preform before the matrix infiltration step. This novel method can produce SiC f /SiC composites with a lower porosity and an uniform distribution of pores when compared with the conventional CVI. This would be expected to increase mechanical and thermal properties of the SiC f /SiC composites. In order to take full advantage of the whisker growing strategy, however, a homogeneous growth of long whiskers is required. In this study, we applied the atmospheric pressure CVI process without metallic catalysts for the growth of SiC nano wires within stacked SiC fiber fabrics. We focused on the effect of the concentration of a reactant gas on the growth behavior and microstructures of the SiC nano wires and discussed a controlling condition for the homogenous growth of long SiC nano wires

SiC nanoparticles as potential carriers for biologically active substances

Science.gov (United States)

Guevara-Lora, Ibeth; Czosnek, Cezary; Smycz, Aleksandra; Janik, Jerzy F.; Kozik, Andrzej

2009-01-01

Silicon carbide SiC thanks to its many advantageous properties has found numerous applications in diverse areas of technology. In this regard, its nanosized forms often with novel properties have been the subject of intense research in recent years. The aim of this study was to investigate the binding of biologically active substances onto SiC nanopowders as a new approach to biomolecule immobilization in terms of their prospective applications in medicine or for biochemical detection. The SiC nanoparticles were prepared by a two-stage aerosol-assisted synthesis from neat hexamethyldisiloxane. The binding of several proteins (bovine serum albumin, high molecular weight kininogen, immunoglobulin G) on SiC particle surfaces was demonstrated at the levels of 1-2 nanograms per mg of SiC. These values were found to significantly increase after suitable chemical modifications of nanoparticle surfaces (by carbodiimide or 3-aminopropyltrietoxysilane treatment). The study of SiC biocompatibility showed a lack of cytotoxicity against macrophages-like cells below the concentration of 1 mg nanoparticles per mL. In summary, we demonstrated the successful immobilization of the selected substances on the SiC nanoparticles. These results including the cytotoxicity study make nano-SiC highly attractive for potential applications in medicine, biotechnology or molecular detection.

Excess molar volumes of the ternary system {methylcyclohexane (1)+cyclohexane (2)+n-alkanes (3)} at T=298.15 K

International Nuclear Information System (INIS)

Iloukhani, Hossein; Rezaei-Sameti, Mahdi

2005-01-01

Densities were experimentally determined in the whole range of composition at T=298.15 K for the ternary system {methylcyclohexane (1)+cyclohexane (2)+n-alkanes (3)} and for the seven corresponding binary systems. The n-alkanes include n-hexane, n-heptane, and n-octane. Excess molar volumes, V E , were calculated for the binaries and ternaries systems. The V 123 E data are positive over the entire range of composition for the systems {methylcyclohexane (1)+cyclohexane (2)+n-heptane (3) or n-octane (3)} at three fixed compositions (f m =X 1 /X 2 ). For the system {methylcyclohexane (1)+cyclohexane (2)+n-hexane (3)}, the V E values showed positive for f m =0.3 and negative for f m =3. The V E data exhibit, an inversion in sign in the mixture containing f m =1 for later ternary system. Several empirical expressions are used to predict and correlate the ternary excess molar volumes from experimental results on the constituted binaries and analyzed to gain insight about liquid mixture interactions

Fundamentals of Passive Oxidation In SiC and Si3N4

Science.gov (United States)

Thomas-Ogbuji, Linus U.

1998-01-01

The very slow oxidation kinetics of silicon carbide and silicon nitride, which derive from their adherent and passivating oxide films, has been explored at length in a broad series of studies utilizing thermogravimetric analysis, electron and optical micrography, energy dispersive spectrometry, x-ray diffractometry, micro-analytical depth profiling, etc. Some interesting microstructural phenomena accompanying the process of oxidation in the two materials will be presented. In Si3N4 the oxide is stratified, with an SiO2 topscale (which is relatively impervious to O2)underlain by a coherent subscale of silicon oxynitride which is even less permeable to O2- Such "defence in depth" endows Si3N4 with what is perhaps the highest oxidation resistance of any material, and results in a unique set of oxidation processes. In SiC the oxidation reactions are much simpler, yet new issues still emerge; for instance, studies involving controlled devitrification of the amorphous silica scale confirmed that the oxidation rate of SiC drops by more than an order of magnitude when the oxide scale fully crystallizes.

Vaporization thermodynamics and enthalpy of formation of aluminum silicon carbide

International Nuclear Information System (INIS)

Behrens, R.G.; Rinehart, G.H.

1984-01-01

The vaporization thermodynamics of aluminum silicon carbide was investigated using Knudsen effusion mass spectrometry. Vaporization occurred incongruently to give Al(g), SiC(s), and graphite as reaction products. The vapor pressure of aluminum above (Al 4 SiC 4 + SiC + C) was measured using graphite effusion cells with orifice areas between 1.1 X 10 -2 and 3.9 X 10 -4 cm 2 . The vapor pressure of aluminum obtained between 1427 and 1784 K using an effusion cell with the smallest orifice area, 3.9 X 10 -4 cm 2 , is expressed as log p (Pa) = - (18567 + or - 86) (K/T) + (12.143 + or - 0.054) The third-law calculation of the enthalpy change for the reaction Al 4 SiC 4 (s) = 4Al(g) + SiC(hex) + 3C(s) using the present aluminum pressures gives ΔH 0 (298.15 K) = (1455 + or - 79) kJ /SUP ./ mol -1 . The corresponding second-law result is ΔH 0 (298.15 K) = (1456 + or - 47) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from the elements calculated from the present vaporization enthalpy (third-law calculation) and the enthalpies of formation of Al(g) and hexagonal SiC is ΔH 0 /SUB f/ (298.15 K) = -(221 + or - 85) kJ /SUP ./ mol -1 . The standard enthalpy of formation of Al 4 SiC 4 (s) from its constituent carbides Al 4 C 3 (s) and SiC(c, hex) is calculated to be ΔH 0 (298.15 K) = (38 + or - 92) KJ /SUP ./ mol -1

Additive-assisted synthesis of boride, carbide, and nitride micro/nanocrystals

International Nuclear Information System (INIS)

Chen, Bo; Yang, Lishan; Heng, Hua; Chen, Jingzhong; Zhang, Linfei; Xu, Liqiang; Qian, Yitai; Yang, Jian

2012-01-01

General and simple methods for the syntheses of borides, carbides and nitrides are highly desirable, since those materials have unique physical properties and promising applications. Here, a series of boride (TiB 2 , ZrB 2 , NbB 2 , CeB 6 , PrB 6 , SmB 6 , EuB 6 , LaB 6 ), carbide (SiC, TiC, NbC, WC) and nitride (TiN, BN, AlN, MgSiN 2 , VN) micro/nanocrystals were prepared from related oxides and amorphous boron/active carbon/NaN 3 with the assistance of metallic Na and elemental S. In-situ temperature monitoring showed that the reaction temperature could increase quickly to ∼850 °C, once the autoclave was heated to 100 °C. Such a rapid temperature increase was attributed to the intense exothermic reaction between Na and S, which assisted the formation of borides, carbides and nitrides. The as-obtained products were characterized by XRD, SEM, TEM, and HRTEM techniques. Results in this report will greatly benefit the future extension of this approach to other compounds. - Graphical abstract: An additive-assisted approach is successfully developed for the syntheses of borides, carbides and nitrides micro/nanocrystals with the assistance of the exothermic reaction between Na and S. Highlights: ► An additive-assisted synthesis strategy is developed for a number of borides, carbides and nitrides. ► The reaction mechanism is demonstrated by the case of SiC nanowires. ► The formation of SiC nanowires is initiated by the exothermic reaction of Na and S.

Dependence of silicon carbide coating properties on deposition parameters: preliminary report

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1980-05-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain a layer of pyrolytic silicon carbide, which acts as a pressure vessel and provides containment of metallic fission products. The silicon carbide (SiC) is deposited by the thermal decomposition of methyltrichlorosilane (CH 3 SiCl 3 or MTS) in an excess of hydrogen. The purpose of the current study is to determine how the deposition variables affect the structure and properties of the SiC layer

Characterization of rare-earth doped Si 3 N4 /SiC micro/nanocomposites

Directory of Open Access Journals (Sweden)

Peter Tatarko

2010-03-01

Full Text Available Influence of various rare-earth oxide additives (La2O3, Nd2O3, Sm2O3, Y2O3, Yb2O3 and Lu2O3 on the mechanical properties of hot-pressed silicon nitride and silicon nitride/silicon carbide micro/nano-composites has been investigated. The bimodal character of microstructures was observed in all studied materials where elongated β-Si3N4 grains were embedded in the matrix of much finer Si3N4 grains. The fracture toughness values increased with decreasing ionic radius of rare-earth elements. The fracture toughness of composites was always lower than that of monoliths due to their finer Si3N4/SiC microstructures. Similarly, the hardness and bending strength values increased with decreasing ionic radius of rare-earth elements either in monoliths or composites. On the other hand, the positive influence of finer microstructure of the composites on strength was not observed due to the present defects in the form of SiC clusters and non-reacted carbon zones. Wear resistance at room temperature also increased with decreasing ionic radius of rare-earth element. Significantly improved creep resistance was observed in case either of composite materials or materials with smaller radius of RE3+.

Very low Schottky barrier height at carbon nanotube and silicon carbide interface

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Suzuki, Kazuma; Shibuya, Megumi; Lee, Chih-Yu [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Masuda, Yoshiho; Tomatsu, Naoya; Norimatsu, Wataru; Kusunoki, Michiko [EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603 (Japan); Hiraiwa, Atsushi [Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); Kawarada, Hiroshi [Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041 (Japan); The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2015-03-23

Electrical contacts to silicon carbide with low contact resistivity and high current durability are crucial for future SiC power devices, especially miniaturized vertical-type devices. A carbon nanotube (CNT) forest formed by silicon carbide (SiC) decomposition is a densely packed forest, and is ideal for use as a heat-dissipative ohmic contact in SiC power transistors. The contact resistivity and Schottky barrier height in a Ti/CNT/SiC system with various SiC dopant concentrations were evaluated in this study. Contact resistivity was evaluated in relation to contact area. The Schottky barrier height was calculated from the contact resistivity. As a result, the Ti/CNT/SiC contact resistivity at a dopant concentration of 3 × 10{sup 18 }cm{sup −3} was estimated to be ∼1.3 × 10{sup −4} Ω cm{sup 2} and the Schottky barrier height of the CNT/SiC contact was in the range of 0.40–0.45 eV. The resistivity is relatively low for SiC contacts, showing that CNTs have the potential to be a good ohmic contact material for SiC power electronic devices.

Effect of TiC content on the microstructure and properties of Ti3SiC2-TiC composites in situ fabricated by spark plasma sintering

International Nuclear Information System (INIS)

Zhang Jianfeng; Wang Lianjun; Jiang Wan; Chen Lidong

2008-01-01

Spark plasma sintering technique was used to in situ fabricate high dense Ti 3 SiC 2 -TiC composites. The calculated TiC volume content from X-ray diffraction (XRD) is close to the theoretical one. It is found from fracture surface observation that TiC is about 1 μm, and Ti 3 SiC 2 is about 2-10 μm in grain size. The fracture modes consist of intergranular mainly for Ti 3 SiC 2 and transgranular fracture mainly for TiC. With the increasing of TiC volume content, Vickers hardness increases to the maximum value of 13 GPa for Ti 3 SiC 2 -40 vol.%TiC. Fracture toughness and flexural strength of the composites are also improved compared with those of monolithic Ti 3 SiC 2 except for Ti 3 SiC 2 -40 vol.%TiC composite. The main reasons for the sudden decrease of fracture toughness and flexural strength of Ti 3 SiC 2 -40 vol.%TiC composite can be attributed to the relatively lower density, some clusters of TiC in the composite and the transition of fracture mode from intergranular to transgranular. The thermal conductivities decreased with the addition of TiC. The minimum thermal conductivity is 22 W m deg. C -1 for Ti 3 SiC 2 -40 vol.%TiC composite

Fabrication and Mechanical Properties of Silicon Carbide Micropillars

International Nuclear Information System (INIS)

Shin, Chan Sun; Jin, Hyung Ha; Kwon, Jun Hyun; Kim, Don Jin

2011-01-01

Silicon carbide (SiC) has outstanding thermal and mechanical properties under high temperature and high neutron irradiation. SiC and SiC/SiC composites have been proposed as a promising candidate material for structural components in fusion reactors. Characterization of the mechanical properties such as fracture strength is important in ensuring the reliability of these ceramic structures. This study demonstrates a micro-compression test of SiC micropillars which are fabricated by mask and dryetching technique. Our fabrication method involves lithographic pattering of spun and baked photoresist on chemically vapor-deposited (CVD) polycrystalline beta-SiC substrates, followed by lift-off process of electroplated metal into the prescribed photoresist template. This metal works as an etch cap for inductively coupled plasma (ICP) etching. Our fabrication method enables the production of more than a few hundred micropillars under an identical fabrication condition, which is a great benefit for the statistical analysis of the fracture properties of brittle ceramic materials. The diameters of fabricated SiC micropillars range from 6 down to 0.5 μm. The ratio of micropillar diameter to height is set to 1:3 ∼ 1:4. Uniaxial compression tests have been conducted using flat punch nanoindentation at room temperature. We observed the specimen size effect on the measured fracture stress of SiC micropillars. In this paper we present the results of the micro-compression tests of SiC micropillars with the diameters of 0.8 and 2.6 μm

Reaction of boron carbide with molybdenum disilicide

International Nuclear Information System (INIS)

Novikov, A.V.; Melekhin, V.F.; Pegov, V.S.

1989-01-01

The investigation results of interaction in the B 4 C-MoSi 2 system during sintering in vacuum are presented. Sintering of boron carbide with molybdenum disilicide is shown to lead to the formation of MoB 2 , SiC, Mo 5 Si 3 compounds, the presence of carbon-containing covering plays an important role in sintering

Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods

International Nuclear Information System (INIS)

Somatri-Bouamrane, R.

1996-01-01

Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions 12 C(α,α), 14 N(α,α), 16 O(α,α), 28 Si(α,α) and 14 N(α,p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

Grafted SiC nanocrystals

DEFF Research Database (Denmark)

Saini, Isha; Sharma, Annu; Dhiman, Rajnish

2017-01-01

), raman spectroscopy and X-ray diffraction (XRD) measurements. UV–Visible absorption spectroscopy was used to study optical properties such as optical energy gap (Eg), Urbach's energy (Eu), refractive index (n), real (ε1) and imaginary (ε2) parts of dielectric constant of PVA as well as PVA......Polyvinyl alcohol (PVA) grafted SiC (PVA-g-SiC)/PVA nanocomposite was synthesized by incorporating PVA grafted silicon carbide (SiC) nanocrystals inside PVA matrix. In-depth structural characterization of resulting nanocomposite was carried out using fourier transform infrared spectroscopy (FTIR...

Pore Formation Process of Porous Ti3SiC2 Fabricated by Reactive Sintering

Directory of Open Access Journals (Sweden)

Huibin Zhang

2017-02-01

Full Text Available Porous Ti3SiC2 was fabricated with high purity, 99.4 vol %, through reactive sintering of titanium hydride (TiH2, silicon (Si and graphite (C elemental powders. The reaction procedures and the pore structure evolution during the sintering process were systematically studied by X-ray diffraction (XRD and scanning electron microscope (SEM. Our results show that the formation of Ti3SiC2 from TiH2/Si/C powders experienced the following steps: firstly, TiH2 decomposed into Ti; secondly, TiC and Ti5Si3 intermediate phases were generated; finally, Ti3SiC2 was produced through the reaction of TiC, Ti5Si3 and Si. The pores formed in the synthesis procedure of porous Ti3SiC2 ceramics are derived from the following aspects: interstitial pores left during the pressing procedure; pores formed because of the TiH2 decomposition; pores formed through the reactions between Ti and Si and Ti and C powders; and the pores produced accompanying the final phase synthesized during the high temperature sintering process.

FLiNaK compatibility studies with Inconel 600 and silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Yoder, Graydon L., E-mail: yodergljr@ornl.gov [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Heatherly, Dennis; Wilson, Dane [Oak Ridge National Laboratory, Bldg. 5700, MS 6167 Bethel Valley Rd., Oak Ridge, TN 37831 (United States); Caja, Mario [Electrochemical Systems, Inc. (ESI), 9320 Collingwood Rd., Knoxville, TN 37922 (United States)

2016-10-15

Highlights: • A versatile experimental design has been developed to examine liquid fluoride salt materials compatibility behavior. • Samples of silicon carbide and a grafoil/nickel spiral wound gasket were exposed to FLiNaK salt at 700 °C for 90 days and showed no degradation. • Alloy 600 showed material effects penetrating up to 300 μm below the salt interface after exposure to the salt for 90 days at 700 °C. • Comparison of the Alloy 600 corrosion results with existing data indicated that results were comparable to the few corrosion results available for Alloy 600. • Sapphire viewing windows incorporated in the experiment showed fogging by condensed salt components at the highest test temperatures. - Abstract: A small liquid fluoride salt test apparatus has been constructed and testing has been conducted to examine the compatibility of silicon carbide (SiC), Inconel 600 and a spiral wound gasket material in FLiNaK, the ternary eutectic alkaline metal fluoride salt mixture. These tests were conducted to evaluate materials and sealing systems that could be used in fluoride salt systems. Three months of testing at 700 °C was conducted to assure that these materials and seals would be acceptable when operating under prototypic operating conditions. The SiC specimens showed little or no change over the test period, while the spiral wound gasket material did not show any degradation except that salt might have been seeping into the outermost spirals of the gasket. The Inconel 600 specimens showed regions of voiding which penetrated the specimen surface to about 250 μm in depth. Analysis indicated that the salt had leached chrome from the Inconel surface, as was expected for this material.

Electronic Structure and Chemical Bond of Ti3SiC2 and Adding Al Element

Institute of Scientific and Technical Information of China (English)

MIN Xinmin; LU Ning; MEI Bingchu

2006-01-01

The relation among electronic structure, chemical bond and property of Ti3SiC2 and Al-doped was studied by density function and discrete variation (DFT-DVM) method. When Al element is added into Ti3SiC2, there is a less difference of ionic bond, which does not play a leading role to influent the properties. After adding Al, the covalent bond of Al and the near Ti becomes somewhat weaker, but the covalent bond of Al and the Si in the same layer is obviously stronger than that of Si and Si before adding. Therefore, in preparation of Ti3SiC2, adding a proper quantity of Al can promote the formation of Ti3SiC2. The density of state shows that there is a mixed conductor character in both of Ti3SiC2 and adding Al element. Ti3SiC2 is with more tendencies to form a semiconductor. The total density of state near Fermi lever after adding Al is larger than that before adding, so the electric conductivity may increase after adding Al.

H2SO4-HNO3-H2O ternary system in the stratosphere

Science.gov (United States)

Kiang, C. S.; Hamill, P.

1974-01-01

Estimation of the equilibrium vapor pressure over the ternary system H2SO4-HNO3-H2O to study the possibility of stratospheric aerosol formation involving HNO3. It is shown that the vapor pressures for the ternary system H2SO4-HNO3-H2O with weight composition around 70-80% H2SO4, 10-20% HNO3, 10-20% H2O at -50 C are below the order of 10 to the minus 8th mm Hg. It is concluded that there exists more than sufficient nitric acid and water vapor in the stratosphere to participate in ternary system aerosol formation at -50 C. Therefore, HNO3 should be present in stratospheric aerosols, provided that H2SO4 is also present.

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

Energy Technology Data Exchange (ETDEWEB)

Pawbake, Amit [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Mayabadi, Azam; Waykar, Ravindra; Kulkarni, Rupali; Jadhavar, Ashok [School of Energy Studies, Savitribai Phule Pune University, Pune 411 007 (India); Waman, Vaishali [Modern College of Arts, Science and Commerce, Shivajinagar, Pune 411 005 (India); Parmar, Jayesh [Tata Institute of Fundamental Research, Colaba, Mumbai 400 005 (India); Bhattacharyya, Somnath [Department of Metallurgical and Materials Engineering, IIT Madras, Chennai 600 036 (India); Ma, Yuan‐Ron [Department of Physics, National Dong Hwa University, Hualien 97401, Taiwan (China); Devan, Rupesh; Pathan, Habib [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India); Jadkar, Sandesh, E-mail: sandesh@physics.unipune.ac.in [Department of Physics, Savitribai Phule Pune University, Pune 411007 (India)

2016-04-15

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gas mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.

Friction stir spot welding of 2024-T3 aluminum alloy with SiC nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Paidar, Moslem; Sarab, Mahsa Laali [Islamic Azad University, Tehran (Iran, Islamic Republic of)

2016-01-15

In this study, the Friction stir spot welding (FSSW) of 2024-T3 aluminum alloy with 1.6 mm thickness was investigated. The effects of the silicon carbide (SiC) nanoparticles on the metallurgical and mechanical properties were discussed. The effects of particles on tension shear and wear tests were also investigated. The process was conducted at a constant rotational speed of 1000 rpm. Results showed that adding SiC nanoparticles to the weld during FSSW had a major effect on the mechanical properties. In fact, the addition of nanoparticles as barriers prevented grain growth in the Stir zone (SZ). The data obtained in the tensile-shear and wear tests showed that tensile-shear load and wear resistance increased with the addition of SiC nanoparticles, which was attributed to the fine grain size produced in the SZ.

Stability and electronic properties of SiC nanowire adsorbed on MoS{sub 2} monolayer

Energy Technology Data Exchange (ETDEWEB)

Sharma, Munish, E-mail: munishsharmahpu@live.com; Pooja,; Ahluwalia, P. K. [Department of Physics, Himachal Pradesh University, Shimla, H. P., 171005 (India); Kumar, Ashok [Department of Physics, Panjab University, Chandigarh, 160014 (India)

2015-06-24

Structural stability and electronic properties of silicon carbide (SiC) nano-wire on MoS{sub 2} monolayer are investigated within the framework of density functional theory (DFT). The preferred binding site for the SiC nano-wire is predicted to be hollow site of monolayer. In the electronic band structure the states in valence band near Fermi level are mainly due to nano-wire leading to reduction of band gap relative to monolayer. These results provide a platform for their applications in optoelectronic devices.

Phase relations in the SiC-Al2O3-Pr2O3 system

International Nuclear Information System (INIS)

Pan, W.; Wu, L.; Jiang, Y.; Huang, Z.

2016-01-01

Phase relations in the Si-Al-Pr-O-C system, including the SiC-Al 2 O 3 -Pr 2 O 3 , the Al 2 O 3 -Pr 2 O 3 -SiO 2 and the SiC-Al 2 O 3 -Pr 2 O 3 -SiO 2 subsystems, were determined by means of XRD phase analysis of solid-state-reacted samples fabricated by using SiC, Al 2 O 3 , Pr 2 O 3 and SiO 2 powders as the starting materials. Subsolidus phase diagrams of the systems were presented. Two Pr-aluminates, namely PrAlO 3 (PrAP) and PrAl 11 O 18 (β(Pr) β-Al 2 O 3 type) were formed in the SiC-Al 2 O 3 -Pr 2 O 3 system. SiC was compatible with both of them. Pr-silicates of Pr 2 SiO 5 , Pr 2 Si 2 O 7 and Pr 9.33 Si 6 O 26 (H(Pr) apatite type) were formed owing to presence of SiO 2 impurity in the SiC powder. The presence of the SiO 2 extended the ternary system of SiC-Al 2 O 3 -Pr 2 O 3 into a quaternary system of SiC-Al 2 O 3 -SiO 2 -Pr 2 O 3 (Si-Al-Pr-O-C). SiC was compatible with Al 2 O 3 , Pr 2 O 3 and the Pr-silicates. The effect of SiO 2 on the phase relations and liquid phase sintering of SiC ceramics was discussed.

Method of fabricating porous silicon carbide (SiC)

Science.gov (United States)

Shor, Joseph S. (Inventor); Kurtz, Anthony D. (Inventor)

1995-01-01

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Determination and modeling of binary and ternary solid-liquid phase equilibrium for the systems formed by 3,5-dinitrobenzoic acid, m-nitrobenzoic acid and acetone

International Nuclear Information System (INIS)

Li, Xinbao; Du, Cunbin; Zhao, Hongkun

2017-01-01

Highlights: • The solubility of 3,5-dinitrobenzoic acid in acetone was determined. • Solubility of m-nitrobenzoic acid + 3,5-dinitrobenzoic acid + acetone was determined. • Three ternary phase diagrams were constructed for the ternary system. • The ternary phase diagrams were calculated by Wilson model and NRTL model. - Abstract: The solubility of 3,5-dinitrobenzoic acid in acetone at the temperatures ranging from (283.15 to 318.15) K and the mutual solubility of the ternary m-nitrobenzoic acid + 3,5-dinitrobenzoic acid + acetone system at (283.15, 298.15 and 313.15) K were determined experimentally by using the isothermal saturation method under atmosphere pressure (101.2 kPa). Three isothermal ternary phase diagrams were constructed according to the measured mutual solubility data. In each ternary phase diagram, there was one co-saturated point, two boundary curves, and three crystalline regions. The modified Apelblat equation, λh equation, NRTL model and Wilson model were used to correlate the solubility of 3,5-dinitrobenzoic acid in acetone; and the NRTL and Wilson models, the mutual solubility for the ternary m-nitrobenzoic acid + 3,5-dinitrobenzoic acid + acetone system. The value of root-mean-square deviation (RMSD) was 8.53 × 10 −4 for the binary system of 3,5-dinitrobenzoic acid + acetone; and the largest value of RMSD was 81.08 × 10 −4 for the ternary system.

From nitrides to carbides: topotactic synthesis of the eta-carbides Fe3Mo3C and Co3Mo3C.

Science.gov (United States)

Alconchel, Silvia; Sapiña, Fernando; Martínez, Eduardo

2004-08-21

The molybdenum bimetallic interstitial carbides Fe(3)Mo(3)C and Co(3)Mo(3)C have been synthesized by temperature-programmed reaction (TPR) between the molybdenum bimetallic interstitial nitrides Fe(3)Mo(3)N and Co(3)Mo(3)N and a flowing mixture of CH(4) and H(2) diluted in Ar. These compounds have been characterized by X-ray diffraction, laser Raman spectroscopy, elemental analysis, energy dispersive analysis of X rays, thermal analysis (in air) and scanning electron microscopy (field emission). Their structures have been refined from X-ray powder diffraction data. These carbides crystallize in the cubic system, space group Fd3m[a= 11.11376(6) and 11.0697(3)[Angstrom] for Fe and Co compounds, respectively].

Interlaminar shear strength of SiC matrix composites reinforced by continuous fibers at 900 °C in air

International Nuclear Information System (INIS)

Zhang, Chengyu; Gou, Jianjie; Qiao, Shengru; Wang, Xuanwei; Zhang, Jun

2014-01-01

Highlights: • The application of SiC fiber could improve ILSS of the SiC matrix composites. • The orientation of the warp fibers plays a critical role in determining ILSS of 2.5D-C/SiC. • The failure mechanisms of 2D composites involve matrix cracking, and interfacial debonding. - Abstract: To reveal the shear properties of SiC matrix composites, interlaminar shear strength (ILSS) of three kinds of silicon carbide matrix composites was investigated by compression of the double notched shear specimen (DNS) at 900 °C in air. The investigated composites included a woven plain carbon fiber reinforced silicon carbide composite (2D-C/SiC), a two-and-a-half-dimensional carbon fiber-reinforced silicon carbide composite (2.5D-C/SiC) and a woven plain silicon carbon fiber reinforced silicon carbide composite (2D-SiC/SiC). A scanning electron microscope was employed to observe the microstructure and fracture morphologies. It can be found that the fiber type and reinforcement architecture have significant impacts on the ILSS of the SiC matrix composites. Great anisotropy of ILSS can be found for 2.5D-C/SiC because of the different fracture resistance of the warp fibers. Larger ILSS can be obtained when the specimens was loaded along the weft direction. In addition, the SiC fibers could enhance the ILSS, compared with carbon fibers. The improvement is attributed to the higher oxidation resistance of SiC fibers and the similar thermal expansion coefficients between the matrix and the fibers

Effect of Liquid Phase Content on Thermal Conductivity of Hot-Pressed Silicon Carbide Ceramics

International Nuclear Information System (INIS)

Lim, Kwang-Young; Jang, Hun; Lee, Seung-Jae; Kim, Young-Wook

2015-01-01

Silicon carbide (SiC) is a promising material for Particle-Based Accident Tolerant (PBAT) fuel, fission, and fusion power applications due to its superior physical and thermal properties such as low specific mass, low neutron cross section, excellent radiation stability, low coefficient of thermal expansion, and high thermal conductivity. Thermal conductivity of PBAT fuel is one of very important factors for plant safety and energy efficiency of nuclear reactors. In the present work, the effect of Y 2 O 3 -Sc 2 O 3 content on the microstructure and thermal properties of the hot pressed SiC ceramics have been investigated. Suppressing the β to α phase transformation of SiC ceramics is beneficial in increasing the thermal conductivity of liquid-phase sintered SiC ceramics. Developed SiC ceramics with Y 2 O 3 -Sc 2 O 3 additives are very useful for thermal conductivity on matrix material of the PBAT fuel

Robust tribo-mechanical and hot corrosion resistance of ultra-refractory Ta-Hf-C ternary alloy films.

Science.gov (United States)

Yate, Luis; Coy, L Emerson; Aperador, Willian

2017-06-08

In this work we report the hot corrosion properties of binary and ternary films of the Ta-Hf-C system in V 2 O 5 -Na 2 SO 4 (50%wt.-50%wt.) molten salts at 700 °C deposited on AISI D3 steel substrates. Additionally, the mechanical and nanowear properties of the films were studied. The results show that the ternary alloys consist of solid solutions of the TaC and HfC binary carbides. The ternary alloy films have higher hardness and elastic recoveries, reaching 26.2 GPa and 87%, respectively, and lower nanowear when compared to the binary films. The corrosion rates of the ternary alloys have a superior behavior compared to the binary films, with corrosion rates as low as 0.058 μm/year. The combination and tunability of high hardness, elastic recovery, low nanowear and an excellent resistance to high temperature corrosion demonstrates the potential of the ternary Ta-Hf-C alloy films for applications in extreme conditions.

Silicon carbide microsystems for harsh environments

CERN Document Server

Wijesundara, Muthu B J

2011-01-01

Silicon Carbide Microsystems for Harsh Environments reviews state-of-the-art Silicon Carbide (SiC) technologies that, when combined, create microsystems capable of surviving in harsh environments, technological readiness of the system components, key issues when integrating these components into systems, and other hurdles in harsh environment operation. The authors use the SiC technology platform suite the model platform for developing harsh environment microsystems and then detail the current status of the specific individual technologies (electronics, MEMS, packaging). Additionally, methods

Chemical compatibility between UO{sub 2} fuel and SiC cladding for LWRs. Application to ATF (Accident-Tolerant Fuels)

Energy Technology Data Exchange (ETDEWEB)

Braun, James, E-mail: james.braun@cea.fr [DEN-Service de Recherches Métallurgiques Appliquées (SRMA), CEA, Université Paris-Saclay, F-91191, Gif-sur-Yvette (France); Guéneau, Christine; Alpettaz, Thierry [DEN-Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), CEA, Université Paris-Saclay, F-91191, Gif-sur-Yvette (France); Sauder, Cédric [DEN-Service de Recherches Métallurgiques Appliquées (SRMA), CEA, Université Paris-Saclay, F-91191, Gif-sur-Yvette (France); Brackx, Emmanuelle; Domenger, Renaud [CEA, DEN, Marcoule, Metallography and Chemical Analysis Laboratory, F-30207 Bagnols-sur-Cèze (France); Gossé, Stéphane [DEN-Service de la Corrosion et du Comportement des Matériaux dans leur Environnement (SCCME), CEA, Université Paris-Saclay, F-91191, Gif-sur-Yvette (France); Balbaud-Célérier, Fanny [DEN-Service d’Etudes Analytiques et de Réactivité des Surfaces (SEARS), CEA, Université Paris-Saclay, F-91191, Gif-sur-Yvette (France)

2017-04-15

Silicon carbide-silicon carbide (SiC/SiC) composites are considered to replace the current zirconium-based cladding materials thanks to their good behavior under irradiation and their resistance under oxidative environments at high temperature. In the present work, a thermodynamic analysis of the UO{sub 2±x}/SiC system is performed. Moreover, using two different experimental methods, the chemical compatibility of SiC towards uranium dioxide, with various oxygen contents (UO{sub 2±x}) is investigated in the 1500–1970 K temperature range. The reaction leads to the formation of mainly uranium silicides and carbides phases along with CO and SiO gas release. Knudsen Cell Mass Spectrometry is used to measure the gas release occurring during the reaction between UO{sub 2+x} and SiC powders as function of time and temperature. These experimental conditions are representative of an open system. Diffusion couple experiments with pellets are also performed to study the reaction kinetics in closed system conditions. In both cases, a limited chemical reaction is observed below 1700 K, whereas the reaction is enhanced at higher temperature due to the decomposition of SiC leading to Si vaporization. The temperature of formation of the liquid phase is found to lie between 1850 < T < 1950 K. - Highlights: •A limited chemical reaction occurs between SiC and UO{sub 2+x} up to 1514 K. •CO gas along with the generation of USi{sub x} are detected over 1514 K in open system. •A liquid phase forms between 1850 and 1950 K in the UO{sub 2+x}/SiC system. •Results are encouraging for the use of SiC/SiC cladding in nuclear reactors.

Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers; Las tensiones residuales y las propiedades mecánicas de compuestos multicapa de Si3N4/SiC con diferentes capas de SiC

Energy Technology Data Exchange (ETDEWEB)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-11-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [Spanish] Se ha investigado el efecto de las tensiones residuales en la resistencia, dureza y trabajo de fractura de los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC. Puede ser una manera eficaz de diseñar y optimizar las propiedades mecánicas de los compuestos multicapa de Si3N4/SiC mediante el control de las propiedades de las capas de SiC. Los compuestos multicapa de Si3N4/SiC con diferentes capas de SiC se fabricaron por medio de colado en cinta en medio acuoso y sinterización sin presión. Las tensiones residuales se calcularon mediante el uso de la simulación ANSYS, los valores máximos de las fuerzas de tracción y compresión fueron 553,2 MPa y −552,1 MPa, respectivamente. Se observó una fractura escalonada a partir de las superficies de fractura. La fracción de capas de deslaminación aumenta con la tensión residual, lo que puede mejorar la fiabilidad de los materiales. La fuerza de tracción residual era beneficiosa para la mejora de la dureza y el trabajo de fractura, pero la resistencia de los compuestos disminuyó.

Atomistic aspects of ductile responses of cubic silicon carbide during nanometric cutting.

Science.gov (United States)

Goel, Saurav; Luo, Xichun; Reuben, Robert L; Rashid, Waleed Bin

2011-11-11

Cubic silicon carbide (SiC) is an extremely hard and brittle material having unique blend of material properties which makes it suitable candidate for microelectromechanical systems and nanoelectromechanical systems applications. Although, SiC can be machined in ductile regime at nanoscale through single-point diamond turning process, the root cause of the ductile response of SiC has not been understood yet which impedes significant exploitation of this ceramic material. In this paper, molecular dynamics simulation has been carried out to investigate the atomistic aspects of ductile response of SiC during nanometric cutting process. Simulation results show that cubic SiC undergoes sp3-sp2 order-disorder transition resulting in the formation of SiC-graphene-like substance with a growth rate dependent on the cutting conditions. The disorder transition of SiC causes the ductile response during its nanometric cutting operations. It was further found out that the continuous abrasive action between the diamond tool and SiC causes simultaneous sp3-sp2 order-disorder transition of diamond tool which results in graphitization of diamond and consequent tool wear.

Effect of deposition conditions on the properties of pyrolytic silicon carbide coatings for high-temperature gas-cooled reactor fuel particles

International Nuclear Information System (INIS)

Stinton, D.P.; Lackey, W.J.

1977-10-01

Silicon carbide coatings on HTGR microsphere fuel act as the barrier to contain metallic fission products. Silicon carbide coatings were applied by the decomposition of CH 3 SiCl 3 in a 13-cm-diam (5-in.) fluidized-bed coating furnace. The effects of temperature, CH 3 SiCl 3 supply rate and the H 2 :CH 3 SiCl 3 ratio on coating properties were studied. Deposition temperature was found to control coating density, whole particle crushing strength, coating efficiency, and microstructure. Coating density and microstructure were also partially determined by the H 2 :CH 3 SiCl 3 ratio. From this work, it appears that the rate at which high quality SiC can be deposited can be increased from 0.2 to 0.5 μm/min

Measurement and calculation of solid–liquid equilibrium for ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol/n-propanol

International Nuclear Information System (INIS)

Li, Rongrong; Han, Shuo; Du, Cunbin; Meng, Long; Wang, Jian; Zhao, Hongkun

2016-01-01

Highlights: • Solid–liquid-phase equilibrium for two ternary systems was determined. • Six ternary phase diagrams were constructed for the two ternary systems. • The ternary phase diagrams were calculated by NRTL model. - Abstract: The stable (solid + liquid) phase equilibrium in ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol and 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + n-propanol at three temperatures was determined by means of an isothermal solution saturation method under pressure p = 101.2 kPa. The isothermal phase diagrams of the two ternary systems were plotted on the basis of the experimental mutual solubility data. The equilibrium solids formed in the two systems were identified by Schreinemakers’ method of wet residues. It was found that each phase diagram included one co-saturated point, two co-saturated curves and three crystallization zones in the ternary systems of 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + ethanol and 3,4-dichloronitrobenzene + 2,3-dichloronitrobenzene + n-propanol. Two pure solid phases were formed in the studied systems, which were pure 2,3-dichloronitrobenzene and pure 3,4-dichloronitrobenzene. The crystallization zone of 3,4-dichloronitrobenzene was smaller than that of 2,3-dichloronitrobenzene at a given temperature, which showed that 2,3-dichloronitrobenzene could be easily separated from the solution. Furthermore, the solid–liquid phase diagrams were calculated by using NRTL model. The calculated phase diagrams agreed well with the experimental ones. Knowledge of (solid + liquid) phase equilibrium and ternary phase diagrams would be very valuable to design and optimize the solvent crystallization process of 2,3-dichloronitrobenzene and other crystallization processes involving the two ternary systems.

Formation of ternary CaUO2(CO3)3(2-) and Ca2UO2(CO3)3(aq) complexes under neutral to weakly alkaline conditions.

Science.gov (United States)

Lee, Jun-Yeop; Yun, Jong-Il

2013-07-21

The chemical behavior of ternary Ca-UO2-CO3 complexes was investigated by using time-resolved laser fluorescence spectroscopy (TRLFS) in combination with EDTA complexation at pH 7-9. A novel TRLFS revealed two distinct fluorescence lifetimes of 12.7 ± 0.2 ns and 29.2 ± 0.4 ns for uranyl complexes which were formed increasingly dependent upon the calcium ion concentration, even though nearly indistinguishable fluorescence peak shapes and positions were measured for both Ca-UO2-CO3 complexes. For identifying the stoichiometric number of complexed calcium ions, slope analysis in terms of relative fluorescence intensity versus calcium concentration was employed in a combination with the complexation reaction of CaEDTA(2-) by adding EDTA. The formation of CaUO2(CO3)3(2-) and Ca2UO2(CO3)3(aq) was identified under given conditions and their formation constants were determined at I = 0.1 M Na/HClO4 medium, and extrapolated to infinitely dilute solution using specific ion interaction theory (SIT). As a result, the formation constants for CaUO2(CO3)3(2-) and Ca2UO2(CO3)3(aq) were found to be log β113(0) = 27.27 ± 0.14 and log β213(0) = 29.81 ± 0.19, respectively, providing that the ternary Ca-UO2-CO3 complexes were predominant uranium(vi) species at neutral to weakly alkaline pH in the presence of Ca(2+) and CO3(2-) ions.

Effect of ion beam bombardment on the carbide in M2 steel modified by ion-beam-assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Li, X.Y.; Wang, F.J.; Wang, Y.K. (Dept. of Materials Engineering, Dalian Univ. of Technology (China)); Ma, T.C. (National Lab. of Materials Modification by Beam Three, Dalian (China))

1991-10-30

Transmission electron microscopy was used to study the effect of nitrogen ion bombardment with different doses on the carbides in M2 high speed steel as the nitrogen ions penetrated into the nitride films during ion-beam-assisted deposition. With different doses of nitrogen, alterations in the morphological characteristics of the carbide M6C at the interface were observed. With lower doses, knitting-like contrast within the carbide showed subboundary structure defects in M6C. With increasing dose, the substructure defects were broken up into small fragments owing to heavy bombardment. The microstructures of carbides at the interface damaged by nitrogen ions are discussed in detail. (orig.).

The Effect of Dispersion Phases of SiC and Al2O3 on the Properties of Galvanic Nickel Coatings

Directory of Open Access Journals (Sweden)

Kozik A.

2016-03-01

Full Text Available In this study, Ni, Ni-SiC and Ni-Al2O3 coatings were electroplated on the 2xxx series aluminium alloy. The following parameters of the electroplating process were applied: current density - 4A/dm2, time - 60 minutes, and temperature - 60°C. Hard particles of submicrometric size were used. The results of the research showing the effect of the addition of hard particles (introduced into the nickel bath as a dispersed phase on the properties of coatings, including the effect of the type (SiC or Al2O3 and content (0, 25, 50 g / l of these particles, were discussed. Based on extensive investigations, it was found that the type of ceramic particles significantly affects the structure of produced coatings. The dispersed particles incorporated into the nickel coatings improve their abrasion resistance. Improving of the corrosion properties were observed only in the case of coatings containing silicon carbide particles.

Thermal stability of Ti3SiC2 thin films

International Nuclear Information System (INIS)

Emmerlich, Jens; Music, Denis; Eklund, Per; Wilhelmsson, Ola; Jansson, Ulf; Schneider, Jochen M.; Hoegberg, Hans; Hultman, Lars

2007-01-01

The thermal stability of Ti 3 SiC 2 (0 0 0 1) thin films is studied by in situ X-ray diffraction analysis during vacuum furnace annealing in combination with X-ray photoelectron spectroscopy, transmission electron microscopy and scanning transmission electron microscopy with energy dispersive X-ray analysis. The films are found to be stable during annealing at temperatures up to ∼1000 deg. C for 25 h. Annealing at 1100-1200 deg. C results in the rapid decomposition of Ti 3 SiC 2 by Si out-diffusion along the basal planes via domain boundaries to the free surface with subsequent evaporation. As a consequence, the material shrinks by the relaxation of the Ti 3 C 2 slabs and, it is proposed, by an in-diffusion of O into the empty Si-mirror planes. The phase transformation process is followed by the detwinning of the as-relaxed Ti 3 C 2 slabs into (1 1 1)-oriented TiC 0.67 layers, which begin recrystallizing at 1300 deg. C. Ab initio calculations are provided supporting the presented decomposition mechanisms

DC electrical conductivity of silicon carbide ceramics and composites for flow channel insert applications

International Nuclear Information System (INIS)

Katoh, Y.; Kondo, S.; Snead, L.L.

2009-01-01

High purity chemically vapor-deposited silicon carbide (SiC) and 2D continuous SiC fiber, chemically vapor-infiltrated SiC matrix composites with pyrocarbon interphases were examined. Specifically, temperature dependent (RT to 800 deg. C) electrical conductivity and the influence of neutron irradiation were measured. The influence of neutron irradiation on electrical properties appeared very strong for the SiC of this study, typically resulting in orders lower ambient conductivity and steeper temperature dependency of this conductivity. For the 2D composites, through-thickness (normal to the fiber axis') electrical conductivity was dominated by bypass conduction via interphase network at relatively low temperatures, whereas conduction through SiC constituents dominated at higher temperatures. Through-thickness electrical conductivity of neutron-irradiated 2D SiC composites with thin PyC interphase, currently envisioned for flow channel insert application, will likely in the order of 10 S/m at the appropriate operating temperature. Mechanisms of electrical conduction in the composites and irradiation-induced modification of electrical conductivity of the composites and their constituents are discussed.

Thermal detection mechanism of SiC based hydrogen resistive gas sensors

Science.gov (United States)

Fawcett, Timothy J.; Wolan, John T.; Lloyd Spetz, Anita; Reyes, Meralys; Saddow, Stephen E.

2006-10-01

Silicon carbide (SiC) resistive hydrogen gas sensors have been fabricated and tested. Planar NiCr contacts were deposited on a thin 3C-SiC epitaxial film grown on thin Si wafers bonded to polycrystalline SiC substrates. At 673K, up to a 51.75±0.04% change in sensor output current and a change in the device temperature of up to 163.1±0.4K were demonstrated in response to 100% H2 in N2. Changes in device temperature are shown to be driven by the transfer of heat from the device to the gas, giving rise to a thermal detection mechanism.

Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

Science.gov (United States)

Reese, Bradley

2015-01-01

Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

Lattice mismatch and energy transfer of Eu- and Dy-codoped MO–Al2O3–SrO (M=Mg, Ca, Ba) ternary compounds affecting luminescence behavior

International Nuclear Information System (INIS)

Liang, Chen-Jui; Huang, Kuan-Yu

2017-01-01

A systematic investigation of energy transfers and luminescence behaviors for M x Sr 0.94−x Al 2 O 4 :Eu 0.02 , Dy 0.04 (M=Mg, Ca, Ba; x=0, 0.235, 0.47, 0.705, 0.94) ternary compounds was accomplished. The results demonstrated that six phenomena must be fitted into the energy-transfer mechanisms of the ternary compounds: (1) the optical band-gap energy of Mg 0.94 Al 2 O 4 :Eu 0.02 Dy 0.04 is extremely low and does not allow photoemission; (2) Ca 2+ and Ba 2+ ions are the main hosts when x≥0.47 in Ca x Sr 1−x Al 2 O 4 :Eu 0.02 Dy 0.04 and Ba x Sr 1−x Al 2 O 4 :Eu 0.02 Dy 0.04 , respectively; (3) Eu 3+ ions are the main activator ions in Ca x Sr 1−x Al 2 O 4 :Eu 0.02 Dy 0.04 with x=0.47 and in Ba x Sr 1−x Al 2 O 4 :Eu 0.02 Dy 0.04 with x=0.353−0.705; (4) Sr 2+ and Eu 2+ ions are the main host and activator ions, respectively, when x<0.353 in each ternary compound; (5) energy transfers from the MO phases to the SrO phase because the conduction band energy of SrO is the lowest; and (6) mutual substitution between alkaline-earth ions does not alter the resultant structures’ crystal field and nephelauxetic effects, as determined by measuring their luminescence. Two energy transfer paths were discovered to be possible in CaO–Al 2 O 3 –SrO and BaO–Al 2 O 3 –SrO ternary compounds, and the boundaries determining which path was chosen were the atomic ratios Ca:Sr and Ba:Sr, both approximately 1.6:1 (x=0.353). Because second path increased the energy transferred from the MO band gap to the SrO band gap, the corresponding structure's spectrum emission intensity was approximately 4.3 times higher than that of the SrO−Al 2 O 3 binary compound, and their photoluminescence was thus substantially higher.

Formation of Al2O3-HfO2 Eutectic EBC Film on Silicon Carbide Substrate

Directory of Open Access Journals (Sweden)

Kyosuke Seya

2015-01-01

Full Text Available The formation mechanism of Al2O3-HfO2 eutectic structure, the preparation method, and the formation mechanism of the eutectic EBC layer on the silicon carbide substrate are summarized. Al2O3-HfO2 eutectic EBC film is prepared by optical zone melting method on the silicon carbide substrate. At high temperature, a small amount of silicon carbide decomposed into silicon and carbon. The components of Al2O3 and HfO2 in molten phase also react with the free carbon. The Al2O3 phase reacts with free carbon and vapor species of AlO phase is formed. The composition of the molten phase becomes HfO2 rich from the eutectic composition. HfO2 phase also reacts with the free carbon and HfC phase is formed on the silicon carbide substrate; then a high density intermediate layer is formed. The adhesion between the intermediate layer and the substrate is excellent by an anchor effect. When the solidification process finished before all of HfO2 phase is reduced to HfC phase, HfC-HfO2 functionally graded layer is formed on the silicon carbide substrate and the Al2O3-HfO2 eutectic structure grows from the top of the intermediate layer.

Interfacial reaction between SiC and aluminium due to extrusion and heat treatment process

International Nuclear Information System (INIS)

Junaidah Jai; Fauzi Ismail; Samsiah Sulaiman; Patthi Hussain, Azmi Idris; Yoichi Murakoshi

1999-01-01

Chemical interaction between aluminium (Al) and silicon carbide (SiC) produces aluminium carbide (Al 4 C 3 ) which presents potential problems in the production and application of Al/SiC Metal Matrix Composit (MMC). The Al 4 C 3 formed can reduce material properties such as strength in the MMC. This research work investigates the interface reaction in Al 7075/SiC MMC made through hot extrusion process. Mixed Al 7075/SiC MMC powders were pressed at 300 degree C and extruded at 500 degree C, with a reduction ratio of 20:1. The extruded MMC was then heat-treated in air at various temperatures from 560 degree C, 600 degree C, 640 degree C, 700 degree C to 800 degree C in order to observe the interface reaction of the MMC materials. The heat-treated MMCs were then analyzed under the optical microscope, X-ray Diffraction (XRD) Spectroscope and Scanning Electron Microscope (SEM) with Energy Dispersive X-ray (EDAZ) attachment to observe the interface reaction within the MMCs. This investigation confirms there was interface reaction between SiC and aluminium

Advances in wide bandgap SiC for optoelectronics

DEFF Research Database (Denmark)

Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

2014-01-01

Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

Electronic structures of ultra-thin silicon carbides deposited on graphite

International Nuclear Information System (INIS)

Baba, Y.; Sekiguchi, T.; Shimoyama, I.; Nath, Krishna G.

2004-01-01

Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 deg. C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of π*-like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the π*-like orbitals are nearly perpendicular to the surface. We conclude that sub-monolayered SiC x film exhibits flat-lying structure of which configuration is similar to a single sheet of graphite

Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

Science.gov (United States)

Halbig, Michael Charles; Singh, Mrityunjay

2015-01-01

Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

Improved the microstructures and properties of M3:2 high-speed steel by spray forming and niobium alloying

Energy Technology Data Exchange (ETDEWEB)

Lu, L. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Xueyuan Road 30, Haidian District, Beijing 100083 (China); Hou, L.G., E-mail: lghou@skl.ustb.edu.cn [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Xueyuan Road 30, Haidian District, Beijing 100083 (China); Zhang, J.X.; Wang, H.B.; Cui, H.; Huang, J.F. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Xueyuan Road 30, Haidian District, Beijing 100083 (China); Zhang, Y.A. [State Key Laboratory of Non-Ferrous Metals and Process, General Research Institute for Non-Ferrous Metals, Beijing 100088 (China); Zhang, J.S. [State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Xueyuan Road 30, Haidian District, Beijing 100083 (China)

2016-07-15

The microstructures and properties of spray formed (SF) high-speed steels (HSSs) with or without niobium (Nb) addition were studied. Particular emphasis was placed on the effect of Nb on the solidification microstructures, decomposition of M{sub 2}C carbides, thermal stability and mechanical properties. The results show that spray forming can refine the cell size of eutectic carbides due to the rapid cooling effect during atomization. With Nb addition, further refinement of the eutectic carbides and primary austenite grains are obtained. Moreover, the Nb addition can accelerate the decomposition of M{sub 2}C carbides and increase the thermal stability of high-speed steel, and also can improve the hardness and bending strength with slightly decrease the impact toughness. The high-speed steel made by spray forming and Nb alloying can give a better tool performance compared with powder metallurgy M3:2 and commercial AISI M2 high-speed steels. - Highlights: • Spray forming can effectively refine the microstructure of M3:2 steel. • Niobium accelerates the decomposition of M{sub 2}C carbides. • Niobium increases the hardness and bending strength of spray formed M3:2 steel. • Spray-formed niobium-containing M3:2 steel has the best tool performance.

Síntese de Al2O3/SiC em forno de microondas: estudo de parâmetros do processo Synthesis of Al2O3/SiC in microwave oven: study of the processing parameters

Directory of Open Access Journals (Sweden)

T. P. Deksnys

2005-12-01

Full Text Available Estudos demonstram a eficiência do método de moagem prévia do aluminossilicato precursor para a síntese da fase Al2O3/SiC por meio da reação de redução carbotérmica em forno de microondas. No presente trabalho, além da moagem do precursor, outros parâmetros de reação foram estudados, como tempo de reação, potência da radiação emitida e fluxo de gás. As reações foram realizadas em forno de microondas semi-industrial, com adaptação para inserção de gás inerte. Dois tipos de reatores foram avaliados: um reator cilíndrico, termicamente isolado, e um reator tubular de leito fixo, nos quais foram colocados os precursores peletizados. Existe uma relação direta entre a saturação da atmosfera de reação com a cinética de redução carbotérmica do aluminossilicato. Esse comportamento, aliado a elevadas potências de emissão, favorecem a formação da fase Al2O3/SiC em períodos de tempo reduzidos.Results presented elsewhere have confirmed the feasibility of the previous milling process of the starting materials for the synthesis of Al2O3/SiC by the microwave-assisted carbothermal reduction. In the present work, parameters such as precursor milling, reaction time, microwave's power level and gas flow have been investigated. Reactions were carried out in a semi-industrial microwave oven (Cober Inc., USA, which allowed the inert gas insertion. Two reactions arrangement were developed to perform the synthesis: a cylindrical reactor, thermally insulated and a pipe fluidized bed reactor. Into both reactors, the precursor was applied in a palletized form to react. There is a direct relation between the reaction atmosphere saturation and the kinetics of the carbothermal reduction. This behavior, in addiction to high power levels of microwave radiation (>1.5 KW, favors the formation of Al2O3/SiC in a short time.

Ag Transport Through Non-Irradiated and Irradiated SiC

Energy Technology Data Exchange (ETDEWEB)

Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Morgan, Dane [Univ. of Wisconsin, Madison, WI (United States); Blanchard, James [Univ. of Wisconsin, Madison, WI (United States)

2016-01-11

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Ag Transport Through Non-Irradiated and Irradiated SiC

International Nuclear Information System (INIS)

Szlufarska, Izabela; Morgan, Dane; Blanchard, James

2016-01-01

Silicon carbide is the main barrier to diffusion of fission products in the current design of TRistuctural ISOtropic (TRISO) coated fuel particles, and Ag is one of the few fission products that have been shown to escape through this barrier. Because the SiC coating in TRISO is exposed to radiation throughout the lifetime of the fuel, understanding of how radiation changes the transport of the fission products is essential for the safety of the reactor. The goals of this project are: (i) to determine whether observed variation in integral release measurements of Ag through SiC can be explained by differences in grain size and grain boundary (GB) types among the samples; (2) to identify the effects of irradiation on diffusion of Ag through SiC; (3) to discover phenomena responsible for significant solubility of Ag in polycrystalline SiC. To address these goals, we combined experimental analysis of SiC diffusion couples with modeling studies of diffusion mechanisms through bulk and GBs of this material. Comparison between results obtained for pristine and irradiated samples brings in insights into the effects of radiation on Ag transport.

Development and Characterization of Carbon Nanotubes (CNTs) and Silicon Carbide (SiC) Reinforced Al-based Nanocomposites

Science.gov (United States)

Gujba, Kachalla Abdullahi

Composites are engineered materials developed from constituent materials; matrix and reinforcements, to attain synergistic behavior at the micro and macroscopic level which are different from the individual materials. The high specific strength, low weight, excellent chemical resistance and fatigue endurance makes these composites superior than other materials despite anisotropic behaviors. Metal matrix composites (MMCs) have excellent physical and mechanical properties and alumium (Al) alloy composites have gained considerable interest and are used in multiple industries including: aerospace, structural and automotive. The aim of this research work is to develop an advanced Al-based nanocomposites reinforced with Carbon nanotubes (CNTs) and silicon carbide particulates (SiCp) nanophases using mechanical alloying and advanced consolidation procedure (Non-conventional) i.e. Spark Plasma Sintering (SPS) using two types of aluminum alloys (Al-7Si-0.3mg and Al-12Si-0.3Mg). Different concentrations of SiCp and CNTs were added and ball milled for different milling periods under controlled atmosphere to study the effect of milling time and the distribution of the second phases. Characterization techniques were used to investigate the morphology of the as received monolithic and milled powder using Field Emission Scanning Electron Microscope (FESEM), Energy Dispersive Spectroscopy (EDS), X-Ray Mapping, X-Ray Diffraction (XRD) and Particle Size Analyses (PSA). The results revealed that the addition of high concentrations of SiCp and CNTs in both alloys aided in refining the structure of the resulting powder further as the reinforcement particles acted like a grinding agent. Good distribution of reinforcing particles was observed from SEM and no compositional fluctuations were observed from the EDS. Some degree of agglomerations was observed despite the ethyl alcohol sonication effect of the CNTs before ball milling. From the XRD; continuous reduction in crystallite size and

Equilibrium Total Pressure and CO2 Solubility in Binary and Ternary Aqueous Solutions of 2-(Diethylamino)ethanol (DEEA) and 3-(Methylamino)propylamine (MAPA)

DEFF Research Database (Denmark)

Waseem Arshad, Muhammad; Svendsen, Hallvard Fjøsne; Fosbøl, Philip Loldrup

2014-01-01

Equilibrium total pressures were measured and equilibrium CO2 partial pressures were calculated from the measured total pressure data in binary and ternary aqueous solutions of 2-(diethylamino)ethanol (DEEA) and 3-(methylamino)propylamine (MAPA). The measurements were carried out in a commercially...... available calorimeter used as an equilibrium cell. The examined systems were the binary aqueous solutions of 5 M DEEA, 2 M MAPA, and 1 M MAPA and the ternary aqueous mixtures of 5 M DEEA + 2 M MAPA (5D2M) and 5 M DEEA + 1 M MAPA (5D1M), which gave liquid–liquid phase split upon CO2 absorption. The total...... pressures were measured and the CO2 partial pressures were calculated as a function of CO2 loading at three different temperatures 40 °C, 80 °C, and 120 °C. All experiments were reproduced with good repeatability. The measurements were carried out for 30 mass % MEA solutions to validate the experimental...

Conversion of wood flour/SiO2/phenolic composite to porous SiC ceramic containing SiC whiskers

Directory of Open Access Journals (Sweden)

Li Zhong

2013-01-01

Full Text Available A novel wood flour/SiO2/phenolic composite was chosen to be converted into porous SiC ceramic containing SiC whiskers via carbothermal reduction. At 1550°C the composite is converted into porous SiC ceramic with pore diameters of 10~40μm, and consisting of β-SiC located at the position of former wood cell walls. β-SiC wire-like whiskers of less than 50 nm in diameter and several tens to over 100 μm in length form within the pores. The surface of the resulting ceramic is coated with β-SiC necklace-like whiskers with diameters of 1~2μm.

Assessment of Silicon Carbide Composites for Advanced Salt-Cooled Reactors

Energy Technology Data Exchange (ETDEWEB)

Katoh, Yutai [ORNL; Wilson, Dane F [ORNL; Forsberg, Charles W [ORNL

2007-09-01

The Advanced High-Temperature Reactor (AHTR) is a new reactor concept that uses a liquid fluoride salt coolant and a solid high-temperature fuel. Several alternative fuel types are being considered for this reactor. One set of fuel options is the use of pin-type fuel assemblies with silicon carbide (SiC) cladding. This report provides (1) an initial viability assessment of using SiC as fuel cladding and other in-core components of the AHTR, (2) the current status of SiC technology, and (3) recommendations on the path forward. Based on the analysis of requirements, continuous SiC fiber-reinforced, chemically vapor-infiltrated SiC matrix (CVI SiC/SiC) composites are recommended as the primary option for further study on AHTR fuel cladding among various industrially available forms of SiC. Critical feasibility issues for the SiC-based AHTR fuel cladding are identified to be (1) corrosion of SiC in the candidate liquid salts, (2) high dose neutron radiation effects, (3) static fatigue failure of SiC/SiC, (4) long-term radiation effects including irradiation creep and radiation-enhanced static fatigue, and (5) fabrication technology of hermetic wall and sealing end caps. Considering the results of the issues analysis and the prospects of ongoing SiC research and development in other nuclear programs, recommendations on the path forward is provided in the order or priority as: (1) thermodynamic analysis and experimental examination of SiC corrosion in the candidate liquid salts, (2) assessment of long-term mechanical integrity issues using prototypical component sections, and (3) assessment of high dose radiation effects relevant to the anticipated operating condition.

Carbide Precipitation in 2.25 Cr-1 Mo Bainitic Steel: Effect of Heating and Isothermal Tempering Conditions

Science.gov (United States)

Dépinoy, Sylvain; Toffolon-Masclet, Caroline; Urvoy, Stéphane; Roubaud, Justine; Marini, Bernard; Roch, François; Kozeschnik, Ernst; Gourgues-Lorenzon, Anne-Françoise

2017-05-01

The effect of the tempering heat treatment, including heating prior to the isothermal step, on carbide precipitation has been determined in a 2.25 Cr-1 Mo bainitic steel for thick-walled applications. The carbides were identified using their amount of metallic elements, morphology, nucleation sites, and diffraction patterns. The evolution of carbide phase fraction, morphology, and composition was investigated using transmission electron microscopy, X-ray diffraction, as well as thermodynamic calculations. Upon heating, retained austenite into the as-quenched material decomposes into ferrite and cementite. M7C3 carbides then nucleate at the interface between the cementite and the matrix, triggering the dissolution of cementite. M2C carbides precipitate separately within the bainitic laths during slow heating. M23C6 carbides precipitate at the interfaces (lath boundaries or prior austenite grain boundaries) and grow by attracting nearby chromium atoms, which results in the dissolution of M7C3 and, depending on the temperature, coarsening, or dissolution of M2C carbides, respectively.

Sintering of SiC ceramics, via liquid phase, with Al{sub 2}O{sub 3}-Yb{sub 2}O{sub 3} additives; Sinterizacao de ceramicas de SiC, via fase liquida, com aditivos de Al{sub 2}O{sub 3}-Yb{sub 2}O{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Atilio, I.; Oliveira, M.R.; Garcia, G.C.R.; Ribeiro, S., E-mail: isabelaatilio@hotmail.com [Universidade de Sao Paulo (USP/EEL), Lorena, SP (Brazil). Escola de Engenharia. Dept. de Engenharia de Materiais

2012-07-01

The objective of this work was to study the sintering of SiC, through liquid phase, using the additive system Al{sub 2}O{sub 3} and Yb{sub 2}O{sub 3} for the first time. The samples were sintered at temperatures of 1900, 1950 and 2000 deg C for 60 minutes. The melting point of the system was determined according to DIN 51730. It has been found the ability of wetting of SiC in the system. The densification results were: 86,36% at 1900 deg C, 88,25% at 1950 deg C and 82,09% at 2000 deg C. The average linear shrinkage was approximately 17%. There was a conversion of β-SiC in α-SiC at all temperatures and sintering phase formation Yb{sub 3}Al{sub 5}O{sub 12}. The melting temperature was 1850 deg C for de system, consistent with the value in the phase diagram, and the wetting angle of 20 deg. The system (Yb{sub 2}O{sub 3}-Al{sub 2}O{sub 3}) is promising to make liquid phase sintering of SiC, for presenting a good result of wettability. (author)

Effects of SiC and MgO on aluminabased ceramic foams filters

Directory of Open Access Journals (Sweden)

CAO Da-li

2007-11-01

Full Text Available Alumina-based foam ceramic filters were fabricated by using alumina, SiC, magnesia powder as major materials. It has been found that this ceramic filter has a uniform macrostructure for filtering molten metals. The influences of SiC and magnesia content, the sintering temperatures on ceramic properties were discussed. Aluminabased foam ceramic filters containing 2.2 mass% magnesia and 7.6 mass% SiC has a compressive strength of 1.36 MPa and a thermal shock resistance of 5 times. Its main phases after 1 hour sintering at 1 500 consist of alumina, silicon carbide, spinel and mullite.

Structural changes of carbides in a high-speed steel - M2 - after hardness and drawing back

International Nuclear Information System (INIS)

Santos, D.B.; Luz Ferreira, O. da; Ribeiro, O.L.R.

1984-01-01

The microstructure of a high-speed steel was studied through the scanning electron microscope. The carbide chemical composition was determined by the X-ray energy spectroscopy. The analyses were done in situ and in precipitate extracted from carbon replica. The phases were shown through the X-ray diffraction in the wastes from electrolytic use. In the annealed structure, some carbides as M 6 C, MC and M 23 C 6 and in the annealed and drawing back structure, carbide as M 6 C and MC were seen. The volumetric fraction of each type was calculated by quantitative metalography. The utilization of the replica technique allows the analysis of carbides smaller than 1 μm without the matrix interference. (E.G.) [pt

Properties of SiC semiconductor detector of fast neutrons investigated using MCNPX code

International Nuclear Information System (INIS)

Sedlakova, K.; Sagatova, A.; Necas, V.; Zatko, B.

2013-01-01

The potential of silicon carbide (SiC) for use in semiconductor nuclear radiation detectors has been long recognized. The wide bandgap of SiC (3.25 eV for 4H-SiC polytype) compared to that for more conventionally used semiconductors, such as silicon (1.12 eV) and germanium (0.67 eV), makes SiC an attractive semiconductor for use in high dose rate and high ionization nuclear environments. The present work focused on the simulation of particle transport in SiC detectors of fast neutrons using statistical analysis of Monte Carlo radiation transport code MCNPX. Its possibilities in detector design and optimization are presented.(authors)

Study of nano-metric silicon carbide powder sintering. Application to fibers processing

International Nuclear Information System (INIS)

Malinge, A.

2011-01-01

Silicon carbide ceramic matrix composites (SiCf/SiCm) are of interest for high temperature applications in aerospace or nuclear components for their relatively high thermal conductivity and low activation under neutron irradiation. While most of silicon carbide fibers are obtained through the pyrolysis of a poly-carbo-silane precursor, sintering of silicon carbide nano-powders seems to be a promising route to explore. For this reason, pressureless sintering of SiC has been studied. Following the identification of appropriate sintering aids for the densification, optimization of the microstructure has been achieved through (i) the analysis of the influence of operating parameters and (ii) the control of the SiC β a SiC α phase transition. Green fibers have been obtained by two different processes involving the extrusion of SiC powder dispersion in polymer solution or the coagulation of a water-soluble polymer containing ceramic particles. Sintering of these green fibers led to fibers of around fifty microns in diameter. (author) [fr

SiC Power MOSFET with Improved Gate Dielectric

Energy Technology Data Exchange (ETDEWEB)

Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

2010-08-23

In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

Analytical and experimental evaluation of joining silicon carbide to silicon carbide and silicon nitride to silicon nitride for advanced heat engine applications Phase 2. Final report

Energy Technology Data Exchange (ETDEWEB)

Sundberg, G.J.; Vartabedian, A.M.; Wade, J.A.; White, C.S. [Norton Co., Northboro, MA (United States). Advanced Ceramics Div.

1994-10-01

The purpose of joining, Phase 2 was to develop joining technologies for HIP`ed Si{sub 3}N{sub 4} with 4wt% Y{sub 2}O{sub 3} (NCX-5101) and for a siliconized SiC (NT230) for various geometries including: butt joins, curved joins and shaft to disk joins. In addition, more extensive mechanical characterization of silicon nitride joins to enhance the predictive capabilities of the analytical/numerical models for structural components in advanced heat engines was provided. Mechanical evaluation were performed by: flexure strength at 22 C and 1,370 C, stress rupture at 1,370 C, high temperature creep, 22 C tensile testing and spin tests. While the silicon nitride joins were produced with sufficient integrity for many applications, the lower join strength would limit its use in the more severe structural applications. Thus, the silicon carbide join quality was deemed unsatisfactory to advance to more complex, curved geometries. The silicon carbide joining methods covered within this contract, although not entirely successful, have emphasized the need to focus future efforts upon ways to obtain a homogeneous, well sintered parent/join interface prior to siliconization. In conclusion, the improved definition of the silicon carbide joining problem obtained by efforts during this contract have provided avenues for future work that could successfully obtain heat engine quality joins.

Single Photon Sources in Silicon Carbide

International Nuclear Information System (INIS)

Brett Johnson

2014-01-01

Single photon sources in semiconductors are highly sought after as they constitute the building blocks of a diverse range of emerging technologies such as integrated quantum information processing, quantum metrology and quantum photonics. In this presentation, we show the first observation of single photon emission from deep level defects in silicon carbide (SiC). The single photon emission is photo-stable at room temperature and surprisingly bright. This represents an exciting alternative to diamond color centers since SiC possesses well-established growth and device engineering protocols. The defect is assigned to the carbon vacancy-antisite pair which gives rise to the AB photoluminescence lines. We discuss its photo-physical properties and their fabrication via electron irradiation. Preliminary measurements on 3C SiC nano-structures will also be discussed. (author)

Lattice location of impurities in silicon Carbide

CERN Document Server

AUTHOR|(CDS)2085259; Correia Martins, João Guilherme

The presence and behaviour of transition metals (TMs) in SiC has been a concern since the start of producing device-grade wafers of this wide band gap semiconductor. They are unintentionally introduced during silicon carbide (SiC) production, crystal growth and device manufacturing, which makes them difficult contaminants to avoid. Once in SiC they easily form deep levels, either when in the isolated form or when forming complexes with other defects. On the other hand, using intentional TM doping, it is possible to change the electrical, optical and magnetic properties of SiC. TMs such as chromium, manganese or iron have been considered as possible candidates for magnetic dopants in SiC, if located on silicon lattice sites. All these issues can be explored by investigating the lattice site of implanted TMs. This thesis addresses the lattice location and thermal stability of the implanted TM radioactive probes 56Mn, 59Fe, 65Ni and 111Ag in both cubic 3C- and hexagonal 6H SiC polytypes by means of emission cha...

Extreme-Environment Silicon-Carbide (SiC) Wireless Sensor Suite

Science.gov (United States)

Yang, Jie

2015-01-01

Phase II objectives: Develop an integrated silicon-carbide wireless sensor suite capable of in situ measurements of critical characteristics of NTP engine; Compose silicon-carbide wireless sensor suite of: Extreme-environment sensors center, Dedicated high-temperature (450 deg C) silicon-carbide electronics that provide power and signal conditioning capabilities as well as radio frequency modulation and wireless data transmission capabilities center, An onboard energy harvesting system as a power source.

Feasibility study on the application of carbide (ZrC, SiC) for VHTR

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog; Kim, Si Hyeong; Jang, Moon Hee; Lee, Young Woo

2006-08-15

A feasibility study on the coating process of ZrC for the TRISO nuclear fuel and applications of SiC as high temperature materials for the core components has performed to develop the fabrication process for the advanced ZrC TRISO fuels and the high temperature structural components for VHTR, respectively. In the case of ZrC coating, studies were focused on the comparisons of the developed coating processes for screening of our technology, the evaluations of the reactions parameters for a ZrC deposition by the thermodynamic calculations and the preliminary coating experiments by the chloride process. With relate to SiC ceramics, our interesting items are as followings; an analysis of applications and specifications of the SiC components and collections of the SiC properties and establishments of data base. For these purposes, applications of SiC ceramics for the GEN-IV related components as well as the fusion reactor related ones were reviewed. Additionally, the on-going activities with related to the ZrC clad and the SiC composites discussed in the VHTR GIF-PMB, were reviewed to make the further research plans at the section 1 in chapter 3.

Graphene/Fe2O3/SnO2 ternary nanocomposites as a high-performance anode for lithium ion batteries.

Science.gov (United States)

Xia, Guofeng; Li, Ning; Li, Deyu; Liu, Ruiqing; Wang, Chen; Li, Qing; Lü, Xujie; Spendelow, Jacob S; Zhang, Junliang; Wu, Gang

2013-09-11

We report an rGO/Fe2O3/SnO2 ternary nanocomposite synthesized via homogeneous precipitation of Fe2O3 nanoparticles onto graphene oxide (GO) followed by reduction of GO with SnCl2. The reduction mechanism of GO with SnCl2 and the effects of reduction temperature and time were examined. Accompanying the reduction of GO, particles of SnO2 were deposited on the GO surface. In the graphene nanocomposite, Fe2O3 nanoparticles with a size of ∼20 nm were uniformly dispersed surrounded by SnO2 nanoparticles, as demonstrated by transmission electron microscopy analysis. Due to the different lithium insertion/extraction potentials, the major role of SnO2 nanoparticles is to prevent aggregation of Fe2O3 during the cycling. Graphene can serve as a matrix for Li+ and electron transport and is capable of relieving the stress that would otherwise accumulate in the Fe2O3 nanoparticles during Li uptake/release. In turn, the dispersion of nanoparticles on graphene can mitigate the restacking of graphene sheets. As a result, the electrochemical performance of rGO/Fe2O3/SnO2 ternary nanocomposite as an anode in Li ion batteries is significantly improved, showing high initial discharge and charge capacities of 1179 and 746 mAhg(-1), respectively. Importantly, nearly 100% discharge-charge efficiency is maintained during the subsequent 100 cycles with a specific capacity above 700 mAhg(-1).

EFFECT OF THE Si POWDER ADDITIONS ON THE PROPERTIES OF SiC COMPOSITES

Directory of Open Access Journals (Sweden)

GUOGANG XU

2012-09-01

Full Text Available By means of transient plastic phase process, the SiC silicon carbide kiln furniture materials were produced through adding Si powder to SiC materials. At the condition of the same additions of SiO2 powder, the effect of the Si powder additions on properties of silicon carbide materials after sintered at 1450°C for 3 h in air atmosphere was studied by means of SEM and other analysis methods. The results showed that silicon powder contributes to both sintering by liquid state and plastic phase combination to improve the strength of samples. When the Si powder additions is lower than 3.5 %, the density and strength of samples increase and porosity decrease with increasing Si powder additions. However when the Si powder additions is higher than 3.5 %, the density and strength of samples decrease and porosity increase with increasing Si powder additions. With increasing of Si additions, the residual strength of sample after thermal shocked increased and linear change rate decreased, and get to boundary value when Si additions is 4.5 %. The results also indicated that at the same sintering temperature, the sample with 3.5 % silicon powder has maximum strength.

Nanotubes, nanobelts, nanowires, and nanorods of silicon carbide from the wheat husks

Energy Technology Data Exchange (ETDEWEB)

Qadri, S. B.; Rath, B. B.; Gorzkowski, E. P.; Feng, J.; Qadri, S. N.; Caldwell, J. D. [Materials Science and Component Technology Directorate, Naval Research Laboratory, Washington, District of Columbia 20375 (United States)

2015-09-14

Nanotubes, nanowires, nanobelts, and nanorods of SiC were synthesized from the thermal treatment of wheat husks at temperatures in excess of 1450 °C. From the analysis based on x-ray diffraction, Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy, it has been found that the processed samples of wheat husk consisted of 2H and 3C polytypes of SiC exhibiting the nanostructure shapes. These nanostructures of silicon carbide formed from wheat husks are of technological importance for designing advance composites, applications in biotechnology, and electro-optics. The thermodynamics of the formation of SiC is discussed in terms of the rapid solid state reaction between hydrocarbons and silica on the molecular scale, which is inherently present in the wheat husks.

Wear-triggered self-healing behavior on the surface of nanocrystalline nickel aluminum bronze/Ti3SiC2 composites

Science.gov (United States)

Zhai, Wenzheng; Lu, Wenlong; Zhang, Po; Wang, Jian; Liu, Xiaojun; Zhou, Liping

2018-04-01

Self-healing can protect materials from diverse damages, but is intrinsically difficult in metals. This paper demonstrates a potential method through a simultaneous decomposition and oxidation of Ti3SiC2 to achieve healing of stress cracking on the surface of nickel aluminum bronze (NAB)/Ti3SiC2 nanocrystalline composites during fretting wear. At the finest nanocrystalline materials, a crack recovery would be attained at 76.5%. The repetitive fretting wear leads to a modest amount of 'flowability' of Ti3SiC2 toward the crack, facilitating crack recovery. Along with the wear-triggered self-healing, the NAB/Ti3SiC2 shows an improved tribological performance with the stable decreased friction torque due to the formation of lubrication TiO2 oxide.

Melting of SiC powders preplaced duplex stainless steel using TIG welding

Science.gov (United States)

Maleque, M. A.; Afiq, M.

2018-01-01

TIG torch welding technique is a conventional melting technique for the cladding of metallic materials. Duplex stainless steels (DSS) show decrease in performance under aggressive environment which may lead to unanticipated failure due to poor surface properties. In this research, surface modification is done by using TIG torch method where silicon carbide (SiC) particles are fused into DSS substrate in order to form a new intermetallic compound at the surface. The effect of particle size, feed rate of SiC preplacement, energy input and shielding gas flow rate on surface topography, microstructure, microstructure and hardness are investigated. Deepest melt pool (1.237 mm) is produced via TIG torch with highest energy input of 1080 J/mm. Observations of surface topography shows rippling marks which confirms that re-solidification process has taken place. Melt microstructure consist of dendritic and globular carbides precipitate as well as partially melted silicon carbides (SiC) particles. Micro hardness recorded at value ranging from 316 HV0.5 to 1277 HV0.5 which shows increment from base hardness of 260 HV0.5kgf. The analyzed result showed that incorporation of silicon carbide particles via TIG Torch method increase the hardness of DSS.

Microstructure and crystallography of Al2O3-Y3Al5O12-ZrO2 ternary eutectic oxide grown by the micropulling down technique

Science.gov (United States)

Benamara, Omar; Cherif, Maya; Duffar, Thierry; Lebbou, Kheirreddine

2015-11-01

The directional solidification of Al2O3-YAG-ZrO2 eutectic ceramic by a micro-pulling down (μ-PD) technique is investigated. The effect of the pulling rate (0.1-1 mm min-1) on the crystallography and the microstructure is discussed. This ternary eutectic system has a Chinese script microstructure and the eutectic spacing λ depends on the pulling rate υ following the law: λ = 6.5υ-1/2 where λ is in μm and υ in μm/s as derived from the Jackson-Hunt model. With the lower pulling rates, all phases are oriented with the direction parallel to the growth direction; however other orientations appear at the higher pulling rates. The Cr3+ ions R-lines emission in the sapphire phase in the ternary eutectic composite is measured to estimate the stress in the alumina phase which is also shown to depend on the pulling rate.

Technical and cost advantages of silicon carbide telescopes for small-satellite imaging applications

Science.gov (United States)

Kasunic, Keith J.; Aikens, Dave; Szwabowski, Dean; Ragan, Chip; Tinker, Flemming

2017-09-01

Small satellites ("SmallSats") are a growing segment of the Earth imaging and remote sensing market. Designed to be relatively low cost and with performance tailored to specific end-use applications, they are driving changes in optical telescope assembly (OTA) requirements. OTAs implemented in silicon carbide (SiC) provide performance advantages for space applications but have been predominately limited to large programs. A new generation of lightweight and thermally-stable designs is becoming commercially available, expanding the application of SiC to small satellites. This paper reviews the cost and technical advantages of an OTA designed using SiC for small satellite platforms. Taking into account faceplate fabrication quilting and surface distortion after gravity release, an optimized open-back SiC design with a lightweighting of 70% for a 125-mm SmallSat-class primary mirror has an estimated mass area density of 2.8 kg/m2 and an aspect ratio of 40:1. In addition, the thermally-induced surface error of such optimized designs is estimated at λ/150 RMS per watt of absorbed power. Cost advantages of SiC include reductions in launch mass, thermal-management infrastructure, and manufacturing time based on allowable assembly tolerances.

Processes and applications of silicon carbide nanocomposite fibers

International Nuclear Information System (INIS)

Shin, D G; Cho, K Y; Riu, D H; Jin, E J

2011-01-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al 2 O 3 . Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Processes and applications of silicon carbide nanocomposite fibers

Energy Technology Data Exchange (ETDEWEB)

Shin, D G; Cho, K Y; Riu, D H [Nanomaterials Team, Korea Institute of Ceramic Engineering and Technology, 233-5 Gasan-dong, Guemcheon-gu, Seoul 153-801 (Korea, Republic of); Jin, E J, E-mail: dhriu15@seoultech.ac.kr [Battelle-Korea Laborotary, Korea University, Anamdong, Seongbuk-gu, Seoul (Korea, Republic of)

2011-10-29

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and {gamma}-Al{sub 2}O{sub 3}. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200deg. C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Processes and applications of silicon carbide nanocomposite fibers

Science.gov (United States)

Shin, D. G.; Cho, K. Y.; Jin, E. J.; Riu, D. H.

2011-10-01

Various types of SiC such as nanowires, thin films, foam, and continuous fibers have been developed since the early 1980s, and their applications have been expanded into several new applications, such as for gas-fueled radiation heater, diesel particulate filter (DPF), ceramic fiber separators and catalyst/catalyst supports include for the military, aerospace, automobile and electronics industries. For these new applications, high specific surface area is demanded and it has been tried by reducing the diameter of SiC fiber. Furthermore, functional nanocomposites show potentials in various harsh environmental applications. In this study, silicon carbide fiber was prepared through electrospinning of the polycarbosilane (PCS) with optimum molecular weight distribution which was synthesized by new method adopting solid acid catalyst such as ZSM-5 and γ-Al2O3. Functional elements such as aluminum, titanium, tungsten and palladium easily doped in the precursor fiber and remained in the SiC fiber after pyrolysis. The uniform SiC fibers were produced at the condition of spinning voltage over 20 kV from the PCS solution as the concentration of 1.3 g/ml in DMF/Toluene (3:7) and pyrolysis at 1200°C. Pyrolyzed products were processed into several interesting applications such as thermal batteries, hydrogen sensors and gas filters.

Comparative study to use nano-(Al2O3, CuO, and SiC) with water to enhance photovoltaic thermal PV/T collectors

International Nuclear Information System (INIS)

Al-Waeli, Ali H.A.; Chaichan, Miqdam T.; Kazem, Hussein A.; Sopian, K.

2017-01-01

Highlights: • Three types of nanoparticles (Al 2 O 3 , CuO and SiC) were added to water which was used as a base fluid. • The resulted nanofluid was used for cooling an indoor PV/T system. • The used nanofluids improved the thermal and electrical efficiencies of the PV/T system. • The stability of nanofluids was examined for an extended period and found to be stable. • SiC nanofluid showed better thermal conductivity and stability compared with Al 2 O 3 and CuO nanofluids. - Abstract: The reduction in efficiency of photovoltaic (PV) units due to increases in cell temperature occurs when a small part of the absorbed solar radiation is converted into electricity and the remaining part is lost as heat. Recently, the addition of a range of nanomaterials with high thermal conductivity to the cooling fluid in PV/T systems has been the subject of much research. In this study, three nanomaterials were added to water as a base fluid with several volume fractions to determine the best concentration and nanoparticle for this application. The PV/T system was setup in an indoor laboratory. Knowing which material has a better effect on the PV unit in particular, and the PV/T unit in general, is important for deciding which nanomaterial is more suitable for the system. The results reveal that nanofluid gives higher thermal conductivity with very little increase in the fluid density and viscosity compared with the base fluid. The studied volume fractions were 0.5, 1, 2, 3, and 4% and the selected nanoparticles were Al 2 O 3 , CuO, and SiC. It was found that silicon carbide nanoparticles have the best stability and the highest thermal conductivity compared to the other two nano-substances. Copper oxide nanofluid has higher thermal conductivity than aluminium oxide but lower stability, although it was found here that this material reliably stable compared to in other studies. The nanofluid reduced the indoor PV/T system temperature and enhanced its generated power.

Nanoparticles and nanorods of silicon carbide from the residues of corn

Science.gov (United States)

Qadri, S. B.; Gorzkowski, E.; Rath, B. B.; Feng, J.; Qadri, S. N.; Kim, H.; Caldwell, J. D.; Imam, M. A.

2015-01-01

We have investigated the thermally induced transformation of various residues of the corn plant into nanoparticles and nanorods of different silicon carbide (SiC) polytypes. This has been accomplished by both microwave-induced and conventional furnace pyrolysis in excess of 1450 °C in an inert atmosphere. This simple process of producing nanoparticles of different polytypes of SiC from the corn plant opens a new method of utilizing agricultural waste to produce viable industrial products that are technologically important for nanoelectronics, molecular sensors, nanophotonics, biotechnology, and other mechanical applications. Using x-ray and Raman scattering characterization, we have demonstrated that the processed samples of corn husk, leaves, stalks, and cob consist of SiC nanostructures of the 2H, 3C, 4H, and 6H polytypes.

Comparative studies of monoclinic and orthorhombic WO3 films used for hydrogen sensor fabrication on SiC crystal

International Nuclear Information System (INIS)

Zuev, V V; Romanov, R I; Fominski, V Y; Grigoriev, S N; Volosova, M A; Demin, M V

2016-01-01

Amorphous WO x films were prepared on the SiC crystal by using two different methods, namely, reactive pulsed laser deposition (RPLD) and reactive deposition by ion sputtering (RDIS). After deposition, the WO x films were annealed in an air. The RISD film possessed a m-WO 3 structure and consisted of closely packed microcrystals. Localized swelling of the films and micro-hills growth did not destroy dense crystal packing. RPLD film had layered β-WO 3 structure with relatively smooth surface. Smoothness of the films were destroyed by localized swelling and the micro-openings formation was observed. Comparative study of m-WO 3 /SiC, Pt/m-WO 3 /SiC, and P-WO 3 /SiC samples shows that structural characteristics of the WO 3 films strongly influence on the voltage/current response as well as on the rate of current growth during H 2 detection at elevated temperatures. (paper)

Corrosion behaviour of 2124 aluminium alloy-silicon carbide metal matrix composites in sodium chloride environment

International Nuclear Information System (INIS)

Singh, Nirbhay; Vadera, K.K.; Ramesh Kumar, A.V.; Singh, R.S.; Monga, S.S.; Mathur, G.N.

1999-01-01

Aluminium alloy based particle reinforced metal matrix composites (MMCs) are being considered for a range of applications. Their mechanical properties have been investigated in detail, but more information about their corrosion resistance is needed. In this investigation, the corrosion behaviour of silicon carbide particulates (SiC p )-2124 aluminium metal matrix composites was studied in 3 wt% sodium chloride solution by means of electrochemical technique and optical microscope. The effects of weight percentages and particle size of silicon carbide particulates on corrosion behaviour of the composite were studied in NaCl and it was observed that corrosion rate increases linearly with the increasing weight percentage of SiC p . The corrosion rate of the MMC increases by increasing the size of SiC particles. Anodization improved corrosion resistance of the composites. (author)

Effect of Ti additive on (Cr, Fe)7C3 carbide in arc surfacing layer and its refined mechanism

International Nuclear Information System (INIS)

Zhou Yefei; Yang Yulin; Yang Jian; Hao Feifei; Li Da; Ren Xuejun; Yang Qingxiang

2012-01-01

Arc surfacing layer of hypoeutectic high chromium cast iron (HCCI) expects refiner carbides in the microstructure to improve its mechanical properties. In this paper, Ti additive as a strong carbide forming element was added in the hypoeutectic HCCI arc surfacing layer. Microstructure of titaniferous hypoeutectic HCCI was studied by optical microscopy, X-ray diffraction and field emission scanning electronic microscopy with energy dispersive spectrometer. Furthermore, the M(M = Cr, Fe) 7 C 3 carbide refinement mechanism was explained by the phase diagram calculation and lattice misfit theory. The results show that, the M 7 C 3 carbide in arc surfacing microstructure of hypoeutectic HCCI has been refined with 2 wt.% Ti additive, and TiC carbide can be observed in/around the M 7 C 3 carbide. With Ti addictive increasing, the micro-hardness along the depth in profile section of layer becomes more uniform, and the wear resistance has been improved. According to the phase diagram calculation, MC carbide precipitates prior to M 7 C 3 carbide in Fe-Cr-C-Ti alloy. In addition, the lattice misfit between (1 1 0) TiC and (010) Cr 7 C 3 is 9.257%, which indicates that the TiC as heterogeneous nuclei of the M 7 C 3 is medium effective. Therefore, the M 7 C 3 carbide can be refined.

Carbides precipitated from the melt in a Zr-2.5 Nb alloy

International Nuclear Information System (INIS)

Piotrkowski, R.; Garcia, E.A.; Vigna, G.L.; Bermudez, S.E.

1993-01-01

An experimental method is presented which leads to the formation of carbides similar in size (3 to 8 microns) and composition to those observed in some pressure tubes of CANDU type reactors. The method is based on melting the Zr-2.5 Nb alloy in a graphite crucible, where isothermal C diffusion in the Zr-Nb melt took place. It can be inferred that the carbides observed in pressure tubes could be originated in high temperature stages of the manufacture process. Otherwise, they could have been incorporated in the Zr sponge. As a result of the diffusion couple Liquid Zr-2.5 Nb/Solid Graphite, a carbide layer, up to 100μm thick, grew attached to the crucible wall, together with carbide particles whose size was in the some microns range. The smallest particles were arranged in rows determined by the prior β phase grains. The main carbide phase detected was the cubic MC 1-x ; the hexagonal M 2 C was also detected; M for metal. (Author)

Rare earth element abundances in presolar SiC

Science.gov (United States)

Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

2018-01-01

Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

Vertically cross-linked and porous CoNi2S4 nanosheets-decorated SiC nanowires with exceptional capacitive performance as a free-standing electrode for asymmetric supercapacitors

Science.gov (United States)

Zhao, Jian; Li, Zhenjiang; Zhang, Meng; Meng, Alan; Li, Qingdang

2016-11-01

In this paper, a simple, low-cost and mild hydrothermal technology of growing vertically cross-linked ternary nickel cobalt sulfides nanosheets (CoNi2S4 NSs) with porous characteristics on SiC nanowires (SiC NWs) supporters with outstanding resistances to oxidation and corrosion, good conductivity and large specific surface area deposited directly on carbon cloth (CC) is successfully developed, forming a new family of free-standing advanced hybrid electrode for asymmetric supercapacitors (ASCs). Such integrated electrode (SiC NWs@CoNi2S4 NSs) manifests intriguing electrochemical characteristics such as high specific capacity (231.1 mA h g-1 at 2 A g-1) and rate capability due to the synergistic effect of SiC NWs and CoNi2S4 NSs with unique morphology. Additionally, an asymmetric supercapacitor is also assembled via using this special hybrid architectures as positive electrode and activated carbon (AC) on Ni foam (NF) as negative electrode, and it can yield a high energy density of 57.8 W h kg-1 with a power density of 1.6 kW kg-1 and long cycling lifespan. This study constitutes an emerging attractive strategy to reasonably design and fabricate novel SiC NWs-based nanostructured electrodes with enhanced capacity, which holds great potential to be the candidate of electrode materials for environmentally benign as well as high-performance energy storage devices.

Microstructural studies of carbides in MAR-M247 nickel-based superalloy

Science.gov (United States)

Szczotok, A.; Rodak, K.

2012-05-01

Carbides play an important role in the strengthening of microstructures of nickel-based superalloys. Grain boundary carbides prevent or retard grain-boundary sliding and make the grain boundary stronger. Carbides can also tie up certain elements that would otherwise promote phase instability during service. Various types of carbides are possible in the microstructure of nickel-based superalloys, depending on the superalloy composition and processing. In this paper, scanning electron and scanning transmission electron microscopy studies of carbides occurring in the microstructure of polycrystalline MAR-M247 nickel-based superalloy were carried out. In the present work, MC and M23C6 carbides in the MAR-M247 microstructure were examined.

High Temperature Corrosion of Silicon Carbide and Silicon Nitride in Water Vapor

Science.gov (United States)

Opila, E. J.; Robinson, Raymond C.; Cuy, Michael D.; Gray, Hugh R. (Technical Monitor)

2002-01-01

Silicon carbide (SiC) and silicon nitride (Si3N4) are proposed for applications in high temperature combustion environments containing water vapor. Both SiC and Si3N4 react with water vapor to form a silica (SiO2) scale. It is therefore important to understand the durability of SiC, Si3N4 and SiO2 in water vapor. Thermogravimetric analyses, furnace exposures and burner rig results were obtained for these materials in water vapor at temperatures between 1100 and 1450 C and water vapor partial pressures ranging from 0.1 to 3.1 atm. First, the oxidation of SiC and Si3N4 in water vapor is considered. The parabolic kinetic rate law, rate dependence on water vapor partial pressure, and oxidation mechanism are discussed. Second, the volatilization of silica to form Si(OH)4(g) is examined. Mass spectrometric results, the linear kinetic rate law and a volatilization model based on diffusion through a gas boundary layer are discussed. Finally, the combined oxidation and volatilization reactions, which occur when SiC or Si3N4 are exposed in a water vapor-containing environment, are presented. Both experimental evidence and a model for the paralinear kinetic rate law are shown for these simultaneous oxidation and volatilization reactions.

Irradiation and annealing of p-type silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Lebedev, Alexander A.; Bogdanova, Elena V.; Grigor' eva, Maria V.; Lebedev, Sergey P. [A.F. Ioffe Physical-Technical Institute, St. Petersburg, 194021 (Russian Federation); Kozlovski, Vitaly V. [St. Petersburg State Polytechnic University, St. Petersburg, 195251 (Russian Federation)

2014-02-21

The development of the technology of semiconductor devices based on silicon carbide and the beginning of their industrial manufacture have made increasingly topical studies of the radiation hardness of this material on the one hand and of the proton irradiation to form high-receptivity regions on the other hand. This paper reports on a study of the carrier removal rate (V{sub d}) in p-6H-SiC under irradiation with 8 MeV protons and of the conductivity restoration in radiation- compensated epitaxial layers of various p-type silicon carbide polytypes. V{sub d} was determined by analysis of capacitance-voltage characteristics and from results of Hall effect measurements. It was found that the complete compensation of samples with the initial value of Na - Nd ≈ 1.5 × 10{sup 18} cm{sup −3} occurs at an irradiation dose of ∼1.1 × 10{sup 16} cm{sup −2}. It is shown that specific features of the sublimation layer SiC (compared to CVD layers) are clearly manifested upon the gamma and electron irradiation and are hardly noticeable under the proton and neutron irradiation. It was also found that the radiation-induced compensation of SiC is retained after its annealing at ≤1000°C. The conductivity is almost completely restored at T ≥ 1200°C. This character of annealing of the radiation compensation is independent of a silicon carbide polytype and the starting doping level of the epitaxial layer. The complete annealing temperatures considerably exceed the working temperatures of SiC-based devices. It is shown that the radiation compensation is a promising method in the technology of high-temperature devices based on SiC.

Mechanical characteristics of microwave sintered silicon carbide

Indian Academy of Sciences (India)

In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

UV laser drilling of SiC for semiconductor device fabrication

Energy Technology Data Exchange (ETDEWEB)

Krueger, Olaf; Schoene, Gerd; Wernicke, Tim; John, Wilfred; Wuerfl, Joachim; Traenkle, Guenther [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

2007-04-15

Pulsed UV laser processing is used to drill micro holes in silicon carbide (SiC) wafers supporting AlGaN/GaN transistor structures. Direct laser ablation using nanosecond pulses has been proven to provide an efficient way to create through and blind holes in 400 {mu}m thick SiC. When drilling through, openings in the front pads are formed, while blind holes stop {approx}40 {mu}m before the backside and were advanced to the electrical contact pad by subsequent plasma etching without an additional mask. Low induction connections (vias) between the transistor's source pads and the ground on the backside were formed by metallization of the holes. Micro vias having aspect ratios of 5-6 have been processed in 400 {mu}m SiC. The process flow from wafer layout to laser drilling is available including an automated beam alignment that allows a positioning accuracy of {+-}1 {mu}m with respect to existing patterns on the wafer. As proven by electrical dc and rf measurements the laser-assisted via technologies have successfully been implemented into fabrication of AlGaN/GaN high-power transistors.

Decomposition of silicon carbide at high pressures and temperatures

Energy Technology Data Exchange (ETDEWEB)

Daviau, Kierstin; Lee, Kanani K. M.

2017-11-01

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

Aqueous suspensions of {alpha}Al{sub 2}O{sub 3}/SiC mixed systems

Energy Technology Data Exchange (ETDEWEB)

Pagnoux, C.; Baklouti, S.; Chartier, T.; Baumard, J.F. [ENSCI, Limoges (France). LMCTS

1997-12-31

The preparation of aqueous {alpha}-Al{sub 2}O{sub 3}, {alpha}-SiO{sub 2} and {alpha}-SiC suspensions with polyelectrolytes, respectively the NH{sub 4}{sup +} salt of polymethacrylic acid (PMA-NH{sub 4}{sup +}) and acidic form polyethylene imine (PEI-H{sup +}) is investigated. It is based on the adsorption of these polyelectrolytes which in turn depends mainly on the nature of the polyelectrolyte, and the charge density which develops on the powder surface in water. Good dispersion and stability of dispersions are then obtained through electrostatic and steric stabilization. As an application, the preparation of an Al{sub 2}O{sub 3}-SiC aqueous mixed slurry was investigated as a preliminary step for processing of Al{sub 2}O{sub 3}/SiC nanocomposites. (orig.) 2 refs.

Super-adiabatic combustion in Al2O3 and SiC coated porous media for thermoelectric power conversion

International Nuclear Information System (INIS)

Mueller, Kyle T.; Waters, Oliver; Bubnovich, Valeri; Orlovskaya, Nina; Chen, Ruey-Hung

2013-01-01

The combustion of ultra-lean fuel/air mixtures provides an efficient way to convert the chemical energy of hydrocarbons and low-calorific fuels into useful power. Matrix-stabilized porous medium combustion is an advanced technique in which a solid porous medium within the combustion chamber conducts heat from the hot gaseous products in the upstream direction to preheat incoming reactants. This heat recirculation extends the standard flammability limits, allowing the burning of ultra-lean and low-calorific fuel mixtures and resulting a combustion temperature higher than the thermodynamic equilibrium temperature of the mixture (i.e., super-adiabatic combustion). The heat generated by this combustion process can be converted into electricity with thermoelectric generators, which is the goal of this study. The design of a porous media burner coupled with a thermoelectric generator and its testing are presented. The combustion zone media was a highly-porous alumina matrix interposed between upstream and downstream honeycomb structures with pore sizes smaller than the flame quenching distance, preventing the flame from propagating outside of the central section. Experimental results include temperature distributions inside the combustion chamber and across a thermoelectric generator; along with associated current, voltage and power output values. Measurements were obtained for a catalytically inert Al 2 O 3 medium and a SiC coated medium, which was tested for the ability to catalyze the super-adiabatic combustion. The combustion efficiency was obtained for stoichiometric and ultra-lean (near the lean flammability limit) mixtures of CH 4 and air. - Highlights: • Design of a porous burner coupled with a thermoelectric module. • Super-adiabatic combustion in a highly-porous ceramic matrix was investigated. • Both alumina and silicon carbide ceramic surfaces were used as porous media. • Catalytic properties of Al 2 O 3 and SiC ceramic surfaces were studied

SiO 2/SiC interface proved by positron annihilation

Science.gov (United States)

Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

2003-06-01

We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2/SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage ( C- V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method.

SiO2/SiC interface proved by positron annihilation

International Nuclear Information System (INIS)

Maekawa, M.; Kawasuso, A.; Yoshikawa, M.; Itoh, H.

2003-01-01

We have studied positron annihilation in a Silicon carbide (SiC)-metal/oxide/semiconductor (MOS) structure using a monoenergetic positron beam. The Doppler broadening of annihilation quanta were measured as functions of the incident positron energy and the gate bias. Applying negative gate bias, significant increases in S-parameters were observed. This indicates the migration of implanted positrons towards SiO 2 /SiC interface and annihilation at open-volume type defects. The behavior of S-parameters depending on the bias voltage was well correlated with the capacitance-voltage (C-V) characteristics. We observed higher S-parameters and the interfacial trap density in MOS structures fabricated using the dry oxidation method as compared to those by pyrogenic oxidation method

Silicon carbide recovered from photovoltaic industry waste as photocatalysts for hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yu [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Hu, Yu [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Zeng, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Zhong, Lin, E-mail: zhonglin@scu.edu.cn [College of Chemical Engineering, Sichuan University, Chengdu, 610064 (China); Liu, Kewei; Cao, Hongmei [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Li, Wei [College of Material Science and Enginneering, Sichuan University, Chengdu, 610064 (China); Yan, Hongjian, E-mail: hjyan@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China)

2017-05-05

Highlights: • SiC was recovered from photovoltaic industry waste. • The recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides. • The recovered SiC shows photocatalytic H{sub 2} evolution from water. - Abstract: In recent years, the focus on creating a dependable and efficient means to recycle or recover the valuable parts from the waste material has drawn significantly attention as an environmentally friendly way to deal with the industrial wastes. The silicon carbide (SiC) crystalline is one of reusable material in the slurry wastes generated during wafer slicing. Here we report the use of recovered SiC from the slurry wastes as photocatalysts to produce hydrogen in the presence of Na{sub 2}SO{sub 3}-Na{sub 2}S as electron donor. The recovered SiC were characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy spectra (XPS), UV–vis (UV–vis) spectroscopy, and photoluminescence (PL) spectroscopy. The morphology of SiC loaded with 1 wt% Pt as cocatalyst by thermal-reduction method was observed by scanning electron microscopy (SEM) and high resolution transmission electron microscopy (TEM). The experimental results reveal that the recovered SiC is mainly consist of 3C-SiC, 6H-SiC and some silicon oxycarbides on the surface of the SiC. The highest hydrogen production rate is 191.8 μmol h{sup −1} g{sup −1}. This study provides a way to recycle crystalline SiC from the discharged waste in the photovoltaic industry and reuse it as photocatalyst to yield hydrogen with the advantage of low energy consumption, low pollution and easy operation.

Silicon carbide optics for space and ground based astronomical telescopes

Science.gov (United States)

Robichaud, Joseph; Sampath, Deepak; Wainer, Chris; Schwartz, Jay; Peton, Craig; Mix, Steve; Heller, Court

2012-09-01

Silicon Carbide (SiC) optical materials are being applied widely for both space based and ground based optical telescopes. The material provides a superior weight to stiffness ratio, which is an important metric for the design and fabrication of lightweight space telescopes. The material also has superior thermal properties with a low coefficient of thermal expansion, and a high thermal conductivity. The thermal properties advantages are important for both space based and ground based systems, which typically need to operate under stressing thermal conditions. The paper will review L-3 Integrated Optical Systems - SSG’s (L-3 SSG) work in developing SiC optics and SiC optical systems for astronomical observing systems. L-3 SSG has been fielding SiC optical components and systems for over 25 years. Space systems described will emphasize the recently launched Long Range Reconnaissance Imager (LORRI) developed for JHU-APL and NASA-GSFC. Review of ground based applications of SiC will include supporting L-3 IOS-Brashear’s current contract to provide the 0.65 meter diameter, aspheric SiC secondary mirror for the Advanced Technology Solar Telescope (ATST).

Interface and interaction of graphene layers on SiC(0001[combining macron]) covered with TiC(111) intercalation.

Science.gov (United States)

Wang, Lu; Wang, Qiang; Huang, Jianmei; Li, Wei-Qi; Chen, Guang-Hui; Yang, Yanhui

2017-10-11

It is important to understand the interface and interaction between the graphene layer, titanium carbide [TiC(111)] interlayer, and silicon carbide [SiC(0001[combining macron])] substrates in epitaxial growth of graphene on silicon carbide (SiC) substrates. In this study, the fully relaxed interfaces which consist of up to three layers of TiC(111) coatings on the SiC(0001[combining macron]) as well as the graphene layers interactions with these TiC(111)/SiC(0001[combining macron]) were systematically studied using the density functional theory-D2 (DFT-D2) method. The results showed that the two layers of TiC(111) coating with the C/C-terminated interfaces were thermodynamically more favorable than one or three layers of TiC(111) on the SiC(0001[combining macron]). Furthermore, the bonding of the Ti-hollow-site stacked interfaces would be a stronger link than that of the Ti-Fcc-site stacked interfaces. However, the formation of the C/Ti/C and Ti/C interfaces implied that the first upper carbon layer can be formed on TiC(111)/SiC(0001[combining macron]) using the decomposition of the weaker Ti-C and C-Si interfacial bonds. When growing graphene layers on these TiC(111)/SiC(0001[combining macron]) substrates, the results showed that the interaction energy depended not only on the thickness of the TiC(111) interlayer, but also on the number of graphene layers. Bilayer graphene on the two layer thick TiC(111)/SiC(0001[combining macron]) was thermodynamically more favorable than a monolayer or trilayer graphene on these TiC(111)/SiC(0001[combining macron]) substrates. The adsorption energies of the bottom graphene layers with the TiC(111)/SiC(0001[combining macron]) substrates increased with the decrease of the interface vertical distance. The interaction energies between the bottom, second and third layers of graphene on the TiC(111)/SiC(0001[combining macron]) were significantly higher than that of the freestanding graphene layers. All of these findings provided

Low dose irradiation performance of SiC interphase SiC/SiC composites

International Nuclear Information System (INIS)

Snead, L.L.; Lowden, R.A.; Strizak, J.; More, K.L.; Eatherly, W.S.; Bailey, J.; Williams, A.M.; Osborne, M.C.; Shinavski, R.J.

1998-01-01

Reduced oxygen Hi-Nicalon fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either 'porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1 x 10 25 n m -2 (E>0.1 MeV) in the temperature range of 260 to 1060 C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber. (orig.)

Selected mechanical properties of aluminum composite materials reinforced with SiC particles

Directory of Open Access Journals (Sweden)

A. Kurzawa

2008-07-01

Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

Synthesis and investigation of silicon carbide nanowires by HFCVD ...

Indian Academy of Sciences (India)

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

Binary and ternary recombination of D3+ ions with electrons in He-D2 plasma

International Nuclear Information System (INIS)

Glosik, J.; Korolov, I.; Plasil, R.; Kotrik, T.; Dohnal, P.; Novotny, O.; Varju, J.; Roucka, S.; Greene, Chris H.; Kokoouline, V.

2009-01-01

An experimental study is reported about the recombination of D 3 + ions with electrons in a low-temperature plasma (200-300 K) consisting of He with a small admixture of D 2 . At several temperatures, the pressure dependence of the apparent binary recombination rate coefficient (α eff ) was measured over a broad range of helium pressures (200-2000 Pa). The binary and ternary recombination rate coefficients were obtained from measured pressure dependences of α eff . The binary recombination rate coefficient obtained α bin (300 K)=(2.7±0.9)x10 -8 cm 3 s -1 is in agreement with recent theory. The ternary recombination rate coefficient obtained is K He (300 K)=(1.8±0.6)x10 -25 cm 6 s -1 . In analogy with the recently described process of helium-assisted ternary recombination of H 3 + ions, it is suggested that the ternary helium-assisted recombination of D 3 + ions proceeds through the formation of a neutral long-lived highly excited Rydberg molecule D 3 followed by a collision with a He atom.

Binary and ternary recombination of D3+ ions with electrons in He-D2 plasma

Science.gov (United States)

Glosík, J.; Korolov, I.; Plašil, R.; Kotrík, T.; Dohnal, P.; Novotný, O.; Varju, J.; Roučka, Š.; Greene, Chris H.; Kokoouline, V.

2009-10-01

An experimental study is reported about the recombination of D3+ ions with electrons in a low-temperature plasma (200-300 K) consisting of He with a small admixture of D2 . At several temperatures, the pressure dependence of the apparent binary recombination rate coefficient (αeff) was measured over a broad range of helium pressures (200-2000 Pa). The binary and ternary recombination rate coefficients were obtained from measured pressure dependences of αeff . The binary recombination rate coefficient obtained αbin(300K)=(2.7±0.9)×10-8cm3s-1 is in agreement with recent theory. The ternary recombination rate coefficient obtained is KHe(300K)=(1.8±0.6)×10-25cm6s-1 . In analogy with the recently described process of helium-assisted ternary recombination of H3+ ions, it is suggested that the ternary helium-assisted recombination of D3+ ions proceeds through the formation of a neutral long-lived highly excited Rydberg molecule D3 followed by a collision with a He atom.

White light emission from engineered silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan

Silicon carbide (SiC) is a wide indirect bandgap semiconductor. The light emission efficiency is low in nature. But this material has very unique physical properties like good thermal conductivity, high break down field etc in addition to its abundance. Therefore it is interesting to engineer its...... light emission property so that to take fully potential applications of this material. In this talk, two methods, i.e. doping SiC heavily by donor-acceptor pairs and making SiC porous are introduced to make light emission from SiC. By co-doping SiC with nitrogen and boron heavily, strong yellow emission...... is demonstrated. After optimizing the passivation conditions, strong blue-green emission from porous SiC is demonstrated as well. When combining the yellow emission from co-doped SiC and blue-green from porous SiC, a high color rendering index white light source is achieved....

Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

International Nuclear Information System (INIS)

Liua, S.; Lia, Y.; Chena, P.; Lia, W.; Gaoa, S.; Zhang, B.; Yeb, F.

2017-01-01

The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2MPa and −552.1MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased. [es

Using of the Modern Semiconductor Devices Based on the SiC

Directory of Open Access Journals (Sweden)

Pavel Drabek

2008-01-01

Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

Tribological Behavior of Si3N4/Ti3SiC2 Contacts Lubricated by Lithium-Based Ionic Liquids

Directory of Open Access Journals (Sweden)

Haizhong Wang

2014-01-01

Full Text Available The tribological performance of Si3N4 ball sliding against Ti3SiC2 disc lubricated by lithium-based ionic liquids (ILs was investigated using an Optimol SRV-IV oscillating reciprocating friction and wear tester at room temperature (RT and elevated temperature (100°C. Glycerol and the conventional imidazolium-based IL 1-hexyl-3-methylimidazolium bis(trifluoromethylsulfonylimide (L-F106 were used as references under the same experimental conditions. The results show that the lithium-based ILs had higher thermal stabilities than glycerol and lower costs associated with IL preparation than L-F106. The tribotest results show that the lithium-based ILs were effective in reducing the friction and wear of Si3N4/Ti3SiC2 contacts. [Li(urea]TFSI even produced better tribological properties than glycerol and L-F106 both at RT and 100°C. The SEM/EDS and XPS results reveal that the excellent tribological endurance of Si3N4/Ti3SiC2 contacts lubricated by lithium-based ILs was mainly attributed to the formation of surface protective films composed of various tribochemical products.

High efficiency three-phase power factor correction rectifier using SiC switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Nymand, Morten

2017-01-01

This paper presents designing procedure of a high efficiency 5 kW silicon-carbide (SiC) based threephase power factor correction (PFC). SiC switches present low capacitive switching loss compared to the alternative Si switches. Therefore, the switching frequency can be increased and hence the siz...

Method of producing silicon carbide articles

International Nuclear Information System (INIS)

Milewski, J.V.

1985-01-01

A method of producing articles comprising reaction-bonded silicon carbide (SiC) and graphite (and/or carbon) is given. The process converts the graphite (and/or carbon) in situ to SiC, thus providing the capability of economically obtaining articles made up wholly or partially of SiC having any size and shape in which graphite (and/or carbon) can be found or made. When the produced articles are made of an inner graphite (and/or carbon) substrate to which SiC is reaction bonded, these articles distinguish SiC-coated graphite articles found in the prior art by the feature of a strong bond having a gradual (as opposed to a sharply defined) interface which extends over a distance of mils. A method for forming SiC whisker-reinforced ceramic matrices is also given. The whisker-reinforced articles comprise SiC whiskers which substantially retain their structural integrity

Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications

Directory of Open Access Journals (Sweden)

Gammon P.M.

2017-01-01

Full Text Available A new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si wafer bonded to silicon carbide (SiC. This novel silicon-on-silicon-carbide (Si/SiC substrate solution promises to combine the benefits of silicon-on-insulator (SOI technology (i.e device confinement, radiation tolerance, high and low temperature performance with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance. Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.

Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

DEFF Research Database (Denmark)

Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

2016-01-01

Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...... lattice mismatch. Secondly, SiC material is abundant, containing no rear-earth element material as commercial phosphor. In this paper, fabrication of porous SiC is introduced, and their morphology and photoluminescence are characterized. Additionally, the carrier lifetime of the porous SiC is measured...... by time-resolved photoluminescence. The ultrashort lifetime in the order of ~70ps indicates porous SiC is very promising for the application in the ultrafast visible light communications....

Grinding Characteristics Of Directionally Aligned SiC Whisker Wheel-Comparison With Al2O3 Fiber Wheel

Institute of Scientific and Technical Information of China (English)

魏源迁; 山口胜美; 菊泽贤二; 洞口严; 中根正喜

2003-01-01

A unique SiC whisker wheel was invented,in which the whiskers were aligned normally to the grinding wheel surface.In this paper,grindabilities of the SiC whisker wheel are investigated and compared with those of other wheels of SiC grains,Al2O3 grains,as well as Al2O3 long and short fibres which were also aligned normally to the grinding wheel surface,respectively.The main research contents concern grinding characteristics of a directionally aligned SiC whisker wheel such as material-removal volume,wheel-wear rates,integrity of the ground surfaces,grinding ratios and grinding efficiency.Furthermore,grinding wheels of whiskers and fibres have a common disadvantage:they tend to load easily.The authors have proposed a simple method of loading-free grinding to overcome this propensity and investigate some related grinding characteristics under loading-free grinding conditions.

Deposition of titanium coating on SiC fiber by chemical vapor deposition with Ti-I{sub 2} system

Energy Technology Data Exchange (ETDEWEB)

Luo, Xian, E-mail: luo_shenfan@hotmail.com; Wu, Shuai; Yang, Yan-qing; Jin, Na; Liu, Shuai; Huang, Bin

2017-06-01

Highlights: • The transformation paths of (Ti + I{sub 2}) powder to Ti coating is: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}) → Ti. • Uniform coating was obtained on SiC fiber, but it contained Si and C elements. • Deposition rate of the coating increased with the increase of temperature. • Deposition thickness increased with time and achieved the maximum at 90 min. - Abstract: Titanium coating was prepared on SiC fiber using titanium-iodine (Ti-I{sub 2}) mixture by hot-wall chemical vapor deposition. Thermodynamic analysis and experimental observation were carried out in this work. The thermodynamic analysis of the reactions in the Ti-I{sub 2} system indicates that Ti and I{sub 2} raw powder materials transform to titanium coating as follows: Ti + I{sub 2} → (TiI{sub 2}, TiI{sub 3}), and (TiI{sub 2}, TiI{sub 3}) → Ti. In theory, the conversions of TiI{sub 3} and TiI{sub 2} reach the maximum when Ti:I{sub 2} is 1:1.5, while in actual experiment that reached the maximum when Ti:I{sub 2} was 1:2, as there existed the waste of I{sub 2} due to sublimation. Typical deposited coating is relatively flat and uniform. However, as SiC is prone to react with Ti at high temperatures, the obtained coating contained some Si and C elements except for Ti. So the coating was not a pure Ti coating but contained some carbides and silicides. Deposition rate of the coating increased with the increase of temperature. The deposited thickness increased with the increase of heat preservation time, and achieved the maximum thickness at 90 min.

Lattice mismatch and energy transfer of Eu- and Dy-codoped MO–Al{sub 2}O{sub 3}–SrO (M=Mg, Ca, Ba) ternary compounds affecting luminescence behavior

Energy Technology Data Exchange (ETDEWEB)

Liang, Chen-Jui, E-mail: cjliang@fcu.edu.tw; Huang, Kuan-Yu

2017-05-15

A systematic investigation of energy transfers and luminescence behaviors for M{sub x}Sr{sub 0.94−x}Al{sub 2}O{sub 4}:Eu{sub 0.02}, Dy{sub 0.04} (M=Mg, Ca, Ba; x=0, 0.235, 0.47, 0.705, 0.94) ternary compounds was accomplished. The results demonstrated that six phenomena must be fitted into the energy-transfer mechanisms of the ternary compounds: (1) the optical band-gap energy of Mg{sub 0.94}Al{sub 2}O{sub 4}:Eu{sub 0.02}Dy{sub 0.04} is extremely low and does not allow photoemission; (2) Ca{sup 2+} and Ba{sup 2+} ions are the main hosts when x≥0.47 in Ca{sub x}Sr{sub 1−x}Al{sub 2}O{sub 4}:Eu{sub 0.02}Dy{sub 0.04} and Ba{sub x}Sr{sub 1−x}Al{sub 2}O{sub 4}:Eu{sub 0.02}Dy{sub 0.04}, respectively; (3) Eu{sup 3+} ions are the main activator ions in Ca{sub x}Sr{sub 1−x}Al{sub 2}O{sub 4}:Eu{sub 0.02}Dy{sub 0.04} with x=0.47 and in Ba{sub x}Sr{sub 1−x}Al{sub 2}O{sub 4}:Eu{sub 0.02}Dy{sub 0.04} with x=0.353−0.705; (4) Sr{sup 2+} and Eu{sup 2+} ions are the main host and activator ions, respectively, when x<0.353 in each ternary compound; (5) energy transfers from the MO phases to the SrO phase because the conduction band energy of SrO is the lowest; and (6) mutual substitution between alkaline-earth ions does not alter the resultant structures’ crystal field and nephelauxetic effects, as determined by measuring their luminescence. Two energy transfer paths were discovered to be possible in CaO–Al{sub 2}O{sub 3}–SrO and BaO–Al{sub 2}O{sub 3}–SrO ternary compounds, and the boundaries determining which path was chosen were the atomic ratios Ca:Sr and Ba:Sr, both approximately 1.6:1 (x=0.353). Because second path increased the energy transferred from the MO band gap to the SrO band gap, the corresponding structure's spectrum emission intensity was approximately 4.3 times higher than that of the SrO−Al{sub 2}O{sub 3} binary compound, and their photoluminescence was thus substantially higher.

Influence of surface morphology and UFG on damping and mechanical properties of composite reinforced with spinel MgAl{sub 2}O{sub 4}-SiC core-shell microcomposites

Energy Technology Data Exchange (ETDEWEB)

Singh, Subhash; Pal, Kaushik, E-mail: pl_kshk@yahoo.co.in

2017-01-15

Interface between ceramic particulate and matrix is known to control the response of the materials and functionality of the composite. Among numerous physical properties, grain structure of the materials has also played a significant role in defining the behaviour of metal matrix composites. Usually, silicon carbide (SiC) particles show poor interfacial wettability in aluminium melt. Herein, we were successfully synthesized magnesium oxide (MgO) and nanocrystalline magnesium aluminate (MgAl{sub 2}O{sub 4}) spinel coated silicon carbide (SiC) core-shell micro-composites through sol-gel technique to improve the wettability of dispersoids. Core-shell structures of submicron size were thoroughly investigated by various characterization techniques. Further, aluminium matrix composites incorporated with pristine SiC, MgO grafted SiC and MgAl{sub 2}O{sub 4} grafted SiC particles were fabricated by stir casting technique, respectively. Additionally, as-cast composites were processed via friction stir processing (FSP) technique to observe the influence of grain refinement on mechanical and damping properties. Electron back scattered diffraction (EBSD), Field emission scanning electron microscopy (FE-SEM) and X-ray energy dispersion spectroscopy (EDX) analysis were conducted for investigating grain size refinement, adequate dispersion, stability and de-agglomeration of encapsulated SiC particles in aluminium matrix. The mechanical as well as thermal cyclic (from − 100 to 400 °C) damping performance of the as-cast and friction stir processed composites were studied, respectively. Finally, the enhanced properties were attributable to reduced agglomeration, stabilization and proper dispersion of the tailored SiC particles Al matrix. - Highlights: •Synthesizing a novel coating layer of MgO and MgAl{sub 2}O{sub 4} spinel onto SiC particles •Significant improvement in UTS and hardness by reinforcing tailored SiC in Al •Significant grain refinements were obtained through

Development of the fabrication process of SiC composite by polycarbosilane

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju; Kim, Jung Il; Ryu, Woo Seog

2004-11-01

This technical report reviewed the fabrication process of fiber reinforced ceramic composites, characteristics of the PIP process, and applications of SiC f /SiC composite to develop a silicon carbide composite by PIP method. Additionally, characteristics and thermal behaviors of a PCS+SiC powder slurry and infiltration behaviors of slurry into the SiC fabric was evaluated. The stacking behaviors of SiC fabrics infiltrated a PCS+SiC powder slurry was also investigated. Using this stacked preforms, SiC f /SiC composites were fabricated by the electron beam curing and pyrolysis process and the thermal oxidation curing and pyrolysis process, respectively. And the characteristics of both composites were compared

Nanowires of silicon carbide and 3D SiC/C nanocomposites with inverse opal structure

International Nuclear Information System (INIS)

Emelchenko, G.A.; Zhokhov, A.A.; Masalov, V.M.; Kudrenko, E.A.; Tereshenko, A.N.; Steinman, E.A.; Khodos, I.I.; Zinenko, V.I.; Agafonov, Yu.A.

2011-01-01

Synthesis, morphology, structural and optical characteristics of SiC NWs and SiC/C nanocomposites with an inverse opal lattice have been investigated. The samples were prepared by carbothermal reduction of silica (SiC NWs) and by thermo-chemical treatment of opal matrices (SiC/C) filled with carbon compounds which was followed by silicon dioxide dissolution. It was shown that the nucleation of SiC NWs occurs at the surface of carbon fibers felt. It was observed three preferred growth direction of the NWs: [111], [110] and [112]. HRTEM studies revealed the mechanism of the wires growth direction change. SiC/C- HRTEM revealed in the structure of the composites, except for silicon carbide, graphite and amorphous carbon, spherical carbon particles containing concentric graphite shells (onion-like particles).

Effect of heat treatment on microstructure and interface of SiC particle reinforced 2124 Al matrix composite

Energy Technology Data Exchange (ETDEWEB)

Mandal, Durbadal, E-mail: durbadal73@yahoo.co.in [MEF Division, CSIR-National Metallurgical Laboratory, Jamshedpur 831007 (India); Viswanathan, Srinath [Dept of Metallurgical and Materials Engineering, University of Alabama, Tuscaloosa, AL (United States)

2013-11-15

The microstructure and interface between metal matrix and ceramic reinforcement of a composite play an important role in improving its properties. In the present investigation, the interface and intermetallic compound present in the samples were characterized to understand structural stability at an elevated temperature. Aluminum based 2124 alloy with 10 wt.% silicon carbide (SiC) particle reinforced composite was prepared through vortex method and the solid ingot was deformed by hot rolling for better particle distribution. Heat treatment of the composite was carried out at 575 °C with varying holding time from 1 to 48 h followed by water quenching. In this study, the microstructure and interface of the SiC particle reinforced Al based composites have been studied using optical microscopy, scanning electron microscopy (SEM) coupled with energy dispersive X-ray spectroscopy (EDS), electron probe micro-analyzer (EPMA) associated with wavelength dispersive spectroscopy (WDS) and transmission electron microscopy (TEM) to identify the precipitate and intermetallic phases that are formed during heat treatment. The SiC particles are uniformly distributed in the aluminum matrix. The microstructure analyses of Al–SiC composite after heat treatment reveal that a wide range of dispersed phases are formed at grain boundary and surrounding the SiC particles. The energy dispersive X-ray spectroscopy and wavelength dispersive spectroscopy analyses confirm that finely dispersed phases are CuAl{sub 2} and CuMgAl{sub 2} intermetallic and large spherical phases are Fe{sub 2}SiAl{sub 8} or Al{sub 15}(Fe,Mn){sub 3}Si. It is also observed that a continuous layer enriched with Cu and Mg of thickness 50–80 nm is formed at the interface in between Al and SiC particles. EDS analysis also confirms that Cu and Mg are segregated at the interface of the composite while no carbide is identified at the interface. - Highlights: • The composite was successfully heat treated at 575°C for 1

Highly active sulfided CoMo catalysts supported on (ZrO{sub 2}–TiO{sub 2})/Al{sub 2}O{sub 3} ternary oxides

Energy Technology Data Exchange (ETDEWEB)

Escobar, José, E-mail: jeaguila@imp.mx [Instituto Mexicano del Petróleo, Eje Central Lázaro Cárdenas 152, Col. San Bartolo Atepehuacan, Gustavo A. Madero, México, D.F. 07730 (Mexico); De Los Reyes, José A., E-mail: jarh@xanum.uam.mx [Area de Ing. Química, UAM – Iztapalapa, San Rafael Atlixco 186, Col. Vicentina, Iztapalapa, México, D.F. 09340 (Mexico); Ulín, Carlos A. [Area de Ing. Química, UAM – Iztapalapa, San Rafael Atlixco 186, Col. Vicentina, Iztapalapa, México, D.F. 09340 (Mexico); Barrera, María C., E-mail: mcbdgavilan@gmail.com [Facultad de Ciencias Químicas, Universidad Veracruzana, Av. Universidad km. 7.5, Col. Santa Isabel, Coatzacoalcos, Veracruz, México, D.F. 96538 (Mexico)

2013-12-16

(ZrO{sub 2}–TiO{sub 2})/Al{sub 2}O{sub 3} ternary oxide at 20 mol% Al{sub 2}O{sub 3} (80% ZrO{sub 2}–TiO{sub 2}, in turn at 40–60 mol ratio) prepared by controlled co-precipitation (by urea thermal decomposition) of zirconium (ZrOCl{sub 2}·8H{sub 2}O) and titanium (TiCl{sub 4}) chlorides over a ground alumina substrate constitutes a promising material to be used as carrier of sulfided hydrodesulfurization (HDS) catalysts. After calcining (at 500 °C), the ternary oxide presented textural properties (S{sub g} = 387 m{sup 2} g{sup −1}, V{sub p} = 0.74 ml g{sup −1}, mean pore diameter = 7.6 nm) suitable to its utilization as carrier of catalysts applied in the oil-derived middle distillates HDS. As determined by temperature programmed-reduction and Raman and UV–vis spectroscopies ZrO{sub 2}–TiO{sub 2} deposition over alumina substrate resulted in decreased proportion of Mo{sup 6+} species in tetrahedral coordination on the oxidic impregnated material. As those species constitute hardly reducible precursors, their diminished concentration could be reflected in enhanced amount of Mo species susceptible of activation by sulfiding (H{sub 2}S/H{sub 2} at 400 °C) over our ternary carrier. Limiting the concentration of zirconia-titania (at 40–60 mol ratio) to 20 mol% in the mixed oxides support allowed the preparation of highly active promoted (by cobalt, at Co/(Co + Mo) = 0.3) MoS{sub 2} phase (at 2.8 atoms/nm{sup 2}), that formulation showing excellent properties in hydrodesulfurization (HDS) of both dibenzothiophene and highly-refractory 4,6-dimethyl-dibenzothiophene. Due to alike yields to various HDS products over CoMo/(ZrO{sub 2}–TiO{sub 2})/Al{sub 2}O{sub 3} and the corresponding Al{sub 2}O{sub 3}-supported formulation, presence of similar actives sites over those catalysts was strongly suggested. It seemed that enhanced concentration of octahedral Mo{sup 6+} over the oxidic impregnated precursor with (ZrO{sub 2}–TiO{sub 2})/Al{sub 2}O{sub 3

Improvements in mechanical properties in SiC by the addition of TiC particles

International Nuclear Information System (INIS)

Wei, G.C.; Becher, P.F.

1984-01-01

Silicon carbide ceramics containing up to 24.6 vol% dispersed TiC particles yielded fully dense composites by hot-pressing at 2000 0 C with 1 wt% Al and 1 wt% C added. The microstructure consists of fine TiC particles in a fine-grained SiC matrix. Addition of TiC particles increases the critical fracture toughness of SiC (to approx. =6 MPa /SUP ./ m /SUP 1/2/ at 24.6 vol% TiC) and yields high flexure strength (greater than or equal to 680 MPa), with both properties increasing with increasing volume fraction of TiC. The strengths at high temperatures are also improved by the TiC additions. Observations of the fracture path indicate that the improved toughness and strength are a result of crack deflection by the TiC particles

Effect of phosphorus addition on the hydrotreating activity of NiMo/Al{sub 2}O{sub 3} carbide catalyst

Energy Technology Data Exchange (ETDEWEB)

Sundaramurthy, V.; Dalai, A.K. [Catalysis and Chemical Reaction Engineering Laboratories, Department of Chemical Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A9 (Canada); Adjaye, J. [Syncrude Edmonton Research Centre, Edmonton, AB T6N 1H4 (Canada)

2007-07-30

A series of phosphorus promoted {gamma}-Al{sub 2}O{sub 3} supported NiMo carbide catalysts with 0-4.5 wt.% P, 13 wt.% Mo and 2.5 wt.% Ni were synthesized and characterized by elemental analysis, pulsed CO chemisorption, BET surface area measurement, X-ray diffraction, near-edge X-ray absorption fine structure, DRIFT spectroscopy of CO adsorption and H{sub 2} temperature programmed reduction. X-ray diffraction patterns and CO uptake showed the P addition to NiMo/{gamma}-Al{sub 2}O{sub 3} carbide, increased the dispersion of {beta}-Mo{sub 2}C particles. DRIFT spectra of adsorbed CO revealed that P addition to NiMo/{gamma}-Al{sub 2}O{sub 3} carbide catalyst not only increases the dispersion of Ni-Mo carbide phase, but also changes the nature of surface active sites. The hydrodenitrogenation (HDN) and hydrodesulfurization (HDS) activities of these P promoted NiMo/{gamma}-Al{sub 2}O{sub 3} carbide catalysts were performed in trickle bed reactor using light gas oil (LGO) derived from Athabasca bitumen and model feed containing quinoline and dibenzothiophene at industrial conditions. The P added NiMo/{gamma}-Al{sub 2}O{sub 3} carbide catalysts showed enhanced HDN activity compared to the NiMo/{gamma}-Al{sub 2}O{sub 3} catalysts with both the feed stocks. The P had almost no influence on the HDS activity of NiMo/{gamma}-Al{sub 2}O{sub 3} carbide with LGO and dibenzothiophene. P addition to NiMo/{gamma}-Al{sub 2}O{sub 3} carbide accelerated C-N bond breaking and thus increased the HDN activity. (author)

Effects of superfine refractory carbide additives on microstructure and mechanical properties of TiB2–TiC+Al2O3 composite ceramic cutting tool materials

International Nuclear Information System (INIS)

Zou, Bin; Ji, Wenbin; Huang, Chuanzhen; Wang, Jun; Li, Shasha; Xu, Kaitao

2014-01-01

Highlights: • The superfine carbides determined the mechanical properties of composites. • Superfine HfC or TaC caused some oxide impurities in composites. • Superfine VC or NbC refined and homogenized the microstructure. • Failure of composites containing HfC or TaC was produced by larger grains. • Composite containing VC exhibited more bridging and transcrystalline failure. -- Abstract: A study to increase the mechanical properties of TiB 2 –TiC+Al 2 O 3 composite ceramic cutting tool material by using superfine refractory carbide additives is presented. Four superfine refractory carbides are considered to investigate their effects on the phase composition, element distribution, grain size, fracture surface, crack propagation of the metal ceramic. The physicochemical properties of superfine carbides, such as chemical activities and atom radius, were found to have the significant effects on the microstructure and mechanical properties of the metal ceramic. Hafnium carbide (HfC) and Tantalum carbide (TaC) reduced the mechanical properties of the metal ceramic because of their poor solubility with the Ni binder phase and the formation of oxides. The mechanical properties of the metal ceramic were increased by the addition of superfine niobium carbide (NbC) and vanadium carbide (VC), and their optimum values were a flexural strength of 1100 ± 62 MPa, fracture toughness of 8.5 ± 0.8 MPa.m1/2 and hardness of 21.53 ± 0.36 GPa, respectively, when 3.2 wt% superfine VC was used

Influence of defects in SiC (0001) on epitaxial graphene

International Nuclear Information System (INIS)

Guo Yu; Guo Li-Wei; Lu Wei; Huang Jiao; Jia Yu-Ping; Sun Wei; Li Zhi-Lin; Wang Yi-Fei

2014-01-01

Defects in silicon carbide (SiC) substrate are crucial to the properties of the epitaxial graphene (EG) grown on it. Here we report the effect of defects in SiC on the crystalline quality of EGs through comparative studies of the characteristics of the EGs grown on SiC (0001) substrates with different defect densities. It is found that EGs on high quality SiC possess regular steps on the surface of the SiC and there is no discernible D peak in its Raman spectrum. Conversely, the EG on the SiC with a high density of defects has a strong D peak, irregular stepped morphology and poor uniformity in graphene layer numbers. It is the defects in the SiC that are responsible for the irregular stepped morphology and lead to the small domain size in the EG. (rapid communication)

Atomic-scale microstructures of Zr2Al3C4 and Zr3Al3C5 ceramics

International Nuclear Information System (INIS)

Lin, Z.J.; Zhuo, M.J.; He, L.F.; Zhou, Y.C.; Li, M.S.; Wang, J.Y.

2006-01-01

The microstructures of bulk Zr 2 Al 3 C 4 and Zr 3 Al 3 C 5 ceramics have been investigated using transmission electron microscopy and scanning transmission electron microscopy. These two carbides were determined to have a point group 6/mmm and a space group P6 3 /mmc using selected-area electron diffraction and convergent beam electron diffraction. The atomic-scale microstructures of Zr 2 Al 3 C 4 and Zr 3 Al 3 C 5 were investigated through high-resolution imaging and Z-contrast imaging. Furthermore, intergrowth between Zr 2 Al 3 C 4 and Zr 3 Al 3 C 5 was identified. Stacking faults in Zr 3 Al 3 C 5 were found to result from the insertion of an additional Zr-C layer. Cubic ZrC was occasionally identified to be incorporated in elongated Zr 3 Al 3 C 5 grains. In addition, Al may induce a twinned ZrC structure and lead to the formation of ternary zirconium aluminum carbides

Sc-W-Si and Sc-W-Ge ternary systems

International Nuclear Information System (INIS)

Kotur, B.Ya.; Voznyak, O.M.; Bodak, O.I.

1989-01-01

Phase equilibria in Sc-W-Si and Sc-W-Ge ternary systems are investigated at 1070 K. Sc 2+x W 3-x Si 4 ternary compound (0≤x≤1) is determined, its crystal structure (Ce 2 Sc 3 Si 4 structural type), as well as, change of elementary cell parameters and microhardness within homogeneity range are determined. Regularities of component interaction within Sc-M-Si(Ge) (M-Cr, Mo, W) ternary system are determined. Ternary systems with Mo and W are more closer to each other according to the phase equilibria character, than to ternary systems with Cr

synthesis and characterization of al/sic composite made by stir casting method

International Nuclear Information System (INIS)

Ghauri, K.M.; Ahmad, A.; Ahmad, R.; Din, K.M.; Chaudhry, J.A.

2013-01-01

Ceramics contain a distinctive property of completely absence of slip planes and have least probability of deforming by the application of force. Among these ceramics, the silicon carbide occupies a competent place to be used as a reinforcing agent for aluminum or its alloys. It has the density close to aluminum and is best for making composite having good strength and good heat conductivity. Stir casting has been used to synthesize Al/SiC MMCs by reinforcing silicon carbide particles into aluminum matrix. The reason for using stir casting is to develop technology for the development of MMCs at affordable cost. The selection of SiC as reinforcement and Al as matrix is because of their easy availability. The practical data acquired, analyzed and optimized will be interpreted in the light of information available in the literature and be shared with the relevant industries. The present work was mainly carried out to characterize the SiC/Al composite which was produced by reinforcing the various proportions of SiC (5, 10, 15, 25 and 30%) in aluminum matrix using stir casting technique. Mechanical properties of test specimens made from stir-casted Aluminum-Silicon Carbide composites have been studied using metallographic and mechanical testing techniques. It was observed that as the volume fraction of SiC in the composite is gradually increased, the hardness and toughness increase. However, beyond a level of 25-30 percent SiC, the results are not very consistent, and depend largely on the uniformity of distribution of SiC in the aluminum matrix. (author)

Quantitative analyses of impurity silicon-carbide (SiC) and high-purity-titanium by neutron activation analyses based on k0-standardization method. Development of irradiation silicon technology in productivity using research reactor (Joint research)

International Nuclear Information System (INIS)

Motohashi, Jun; Takahashi, Hiroyuki; Magome, Hirokatsu; Sasajima, Fumio; Tokunaga, Okihiro; Kawasaki, Kozo; Onizawa, Koji; Isshiki, Masahiko

2009-07-01

JRR-3 and JRR-4 have been providing neutron-transmutation-doped silicon (NTD-Si) by using the silicon NTD process, which is a method to produce a high quality semiconductor. The domestic supply of NTD-Si is insufficient for the demand, and the market of NTD-Si is significantly growing at present. It is very important to increase achieve the production. To fulfill the requirement, we have been investigating a neutron filter, which is made of high-purity-titanium, for uniform doping. Silicon-carbide (SiC) semiconductor doped with NTD technology is considered suitable for high power devices with superior performances to conventional Si-based devices. We are very interested in the SiC as well. This report presents the results obtained after the impurity contents in the high-purity-titanium and SiC were analyzed by neutron activation analyses (NAA) using k 0 -standardization method. There were 6 and 9 impurity elements detected from the high-purity-titanium and SiC, respectively. Among those Sc from the high-purity-titanium and Fe from SiC were comparatively long half life nuclides. From the viewpoint of exposure in handling them, we need to examine the impurity control of materials. (author)

Determination of SiC ceramic foams microstructure properties by X-rays microtomography

International Nuclear Information System (INIS)

Nagata, Rodrigo; Appoloni, Carlos Roberto; Fernandes, Jaquiel Salvi

2009-01-01

Silicon carbide ceramic foams (SiC) can operate at high temperatures, which allow them to be used as heat exchangers, liquid metal filters, composite of rocket nozzles, etc. For many of these applications it is very important to know the foams' porosity. In this work the porosity of SiC ceramic foams was determined by X-rays microtomography, a powerful non-destructive technique that allows the analysis of the sample's internal structure. The samples have pore densities of 30, 45, 60, 80 and 100 pores per inch (ppi). The spatial resolution obtained was 24.8 μm. The cross sections' reconstruction was performed with a cone beam filtered backprojection algorithm. In the analyses, micropores were observed in the foam's lattice wire of the 30 ppi and 45 ppi samples. Micropores were present in few cross sections of 60 ppi sample too, but it was not found in the 80 ppi and 100 ppi samples. The total porosities obtained were Φ = (88.8 ± 4.3) %, Φ = (85.2 ± 1.4) %, Φ = (82.3 ± 1.8) %, Φ (79.9 ± 1.3) % and Φ = (80.4 ± 1.5) %, for the 30, 45, 60, 80 and 100 ppi samples, respectively. (author)

Research Progress on Preparation for Biomass-based SiC Ceramic

Directory of Open Access Journals (Sweden)

CUI He-shuai

2017-08-01

Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

First identification and thermodynamic characterization of the ternary U(VI) species, UO2(O2)(CO3)2(4-), in UO2-H2O2-K2CO3 solutions.

Science.gov (United States)

Goff, George S; Brodnax, Lia F; Cisneros, Michael R; Peper, Shane M; Field, Stephanie E; Scott, Brian L; Runde, Wolfgang H

2008-03-17

In alkaline carbonate solutions, hydrogen peroxide can selectively replace one of the carbonate ligands in UO2(CO3)3(4-) to form the ternary mixed U(VI) peroxo-carbonato species UO2(O2)(CO3)2(4-). Orange rectangular plates of K4[UO2(CO3)2(O2)].H2O were isolated and characterized by single crystal X-ray diffraction studies. Crystallographic data: monoclinic, space group P2(1)/ n, a = 6.9670(14) A, b = 9.2158(10) A, c = 18.052(4) A, Z = 4. Spectrophotometric titrations with H 2O 2 were performed in 0.5 M K 2CO 3, with UO2(O2)(CO3)2(4-) concentrations ranging from 0.1 to 0.55 mM. The molar absorptivities (M(-1) cm(-1)) for UO2(CO3)3(4-) and UO2(O2)(CO3)2(4-) were determined to be 23.3 +/- 0.3 at 448.5 nm and 1022.7 +/- 19.0 at 347.5 nm, respectively. Stoichiometric analyses coupled with spectroscopic comparisons between solution and solid state indicate that the stable solution species is UO2(O2)(CO3)2(4-), which has an apparent formation constant of log K' = 4.70 +/- 0.02 relative to the tris-carbonato complex.

Characterization and formation of NV centers in 3 C , 4 H , and 6 H SiC: An ab initio study

Science.gov (United States)

Csóré, A.; von Bardeleben, H. J.; Cantin, J. L.; Gali, A.

2017-08-01

Fluorescent paramagnetic defects in solids have become attractive systems for quantum information processing in recent years. One of the leading contenders is the negatively charged nitrogen-vacancy (NV) defect in diamond with visible emission, but an alternative solution in a technologically mature host is an immediate quest for many applications in this field. It has been recently found that various polytypes of silicon carbide (SiC), that are standard semiconductors with wafer scale technology, can host a NV defect that could be an alternative qubit candidate with emission in the near infrared region. However, there is much less known about this defect than its counterpart in diamond. The inequivalent sites within a polytype and the polytype variations offer a family of NV defects. However, there is an insufficient knowledge on the magneto-optical properties of these configurations. Here we carry out density functional theory calculations, in order to characterize the numerous forms of NV defects in the most common polytypes of SiC including 3 C , 4 H , and 6 H , and we also provide new experimental data in 4 H SiC. Our calculations mediate the identification of individual NV qubits in SiC polytypes. In addition, we discuss the formation of NV defects in SiC, providing detailed ionization energies of NV defects in SiC, which reveals the critical optical excitation energies for ionizing these qubits in SiC. Our calculations unravel the challenges to produce NV defects in SiC with a desirable spin bath.

Fabrication of fiber composites with a MAX phase matrix by reactive melt infiltration

International Nuclear Information System (INIS)

Lenz, F; Krenkel, W

2011-01-01

Due to the inherent brittleness of ceramics it is very desirable to increase the damage tolerance of ceramics. The ternary MAX phases are a promising group of materials with high fracture toughness. The topic of this study is the development of ceramic matrix composites (CMCs) with a matrix containing MAX phases, to achieve a damage tolerant structural composite material. For this purpose carbon fiber reinforced preforms with a carbon-titanium carbide matrix (C/C-TiC) were developed and infiltrated with silicon by a pressureless reactive melt infiltration. Finally liquid silicon caused the formation of SiC, TiSi 2 and Ti 3 SiC 2 in the matrix of the composite.

Rapid Chemical Vapor Infiltration of Silicon Carbide Minicomposites at Atmospheric Pressure.

Science.gov (United States)

Petroski, Kenneth; Poges, Shannon; Monteleone, Chris; Grady, Joseph; Bhatt, Ram; Suib, Steven L

2018-02-07

The chemical vapor infiltration technique is one of the most popular for the fabrication of the matrix portion of a ceramic matrix composite. This work focuses on tailoring an atmospheric pressure deposition of silicon carbide onto carbon fiber tows using the methyltrichlorosilane (CH 3 SiCl 3 ) and H 2 deposition system at atmospheric pressure to create minicomposites faster than low pressure systems. Adjustment of the flow rate of H 2 bubbled through CH 3 SiCl 3 will improve the uniformity of the deposition as well as infiltrate the substrate more completely as the flow rate is decreased. Low pressure depositions conducted at 50 Torr deposit SiC at a rate of approximately 200 nm*h -1 , while the atmospheric pressure system presented has a deposition rate ranging from 750 nm*h -1 to 3.88 μm*h -1 . The minicomposites fabricated in this study had approximate total porosities of 3 and 6% for 10 and 25 SCCM infiltrations, respectively.

Joining of silicon carbide using interlayer with matching coefficient of thermal expansion

International Nuclear Information System (INIS)

Perham, T.

1996-11-01

The primary objective of this study is to develop a technique for joining a commercially available Silicon Carbide that gives good room temperature strength and the potential for good high temperature strength. One secondary objective is that the joining technique be adaptable to SiC f /SiC composites and/or Nickel based superalloys, and another secondary objective is that the materials provide good neutron irradiation resistance and low activation for potential application inside nuclear fusion reactors. The joining techniques studied here are: (1) reaction bonding with Al-Si/Si/SiC/C; (2) reaction/infiltration with calcium aluminum silicate; (3) ion exchange mechanism to form calcium hexaluminate (a refractory cement); and (4) oxide frit brazing with cordierite

Microstructure and wear resistance of Al2O3-M7C3/Fe composite coatings produced by laser controlled reactive synthesis

Science.gov (United States)

Tan, Hui; Luo, Zhen; Li, Yang; Yan, Fuyu; Duan, Rui

2015-05-01

Based on the principle of thermite reaction of Al and Fe2O3 powders, the Al2O3 ceramic reinforced Fe-based composite coatings were fabricated on a steel substrate by laser controlled reactive synthesis and cladding. The effects of different additions of thermite reactants on the phase transition, microstructure evolution, microhardness and wear resistance of the composite coatings were investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), Vickers microhardness and block-on-ring wear test, respectively. The results show that Al2O3 ceramic and M7C3 carbide are in situ synthesized via the laser controlled reactive synthesis. The Al2O3 ceramic and M7C3 carbides prefer to distribute along the γ-Fe phase boundary continuously, which separates the γ-Fe matrix and is beneficial to the grain refinement. With the increase of thermite reactants, the amount of Al2O3 ceramic and M7C3 carbide in the composite coatings increases gradually. Moreover the cladding layer changes from dendritic structure to columnar structure and martensite structure in the heat affected zone becomes coarse. The increased thermite reactants improve the microhardness and wear resistance of the in situ composite coatings obviously and enhance the hardness of the heat affected zone, which should be ascribed to the grain refinement, ceramic and carbide precipitation and solid solution strengthening.

Double Z-scheme ZnO/ZnS/g-C3N4 ternary structure for efficient photocatalytic H2 production

Science.gov (United States)

Dong, Zhifang; Wu, Yan; Thirugnanam, Natarajan; Li, Gonglin

2018-02-01

In the present work, a novel ZnO/ZnS/g-C3N4 ternary nanocomposite with double Z-scheme heterojunction has been designed via a two-step facile chemical conversion route. The spherical ZnS nanoparticles were uniformly loaded onto ZnO nanoflowers surface. And then the ZnO/ZnS nanocomposite was further hybridized with g-C3N4 nanosheets. Ternary ZnO/ZnS/g-C3N4 nanocomposite displays the largest specific surface area (about 76.2 m2/g), which provides plentiful activated sites for photocatalytic reaction. Furthermore, the ternary material exhibits the highest methylene blue photodegradation rate of about 0.0218 min-1 and the optimum photocatalytic H2 production (1205 μmol/g) over water splitting at 4 h under solar light irradiation. Moreover, it showed the highest photocurrent effect and the minimum charge-transfer resistance. These results implied that the higher photoactivity of ZnO/ZnS/g-C3N4 nanocomposite could be attributed to the multi-steps charge transfer and effective electron-hole separation in the double Z-scheme system.

Synthesis of SiC nanoparticles by SHG 532 nm Nd:YAG laser ablation of silicon in ethanol

Science.gov (United States)

Khashan, Khawla S.; Ismail, Raid A.; Mahdi, Rana O.

2018-06-01

In this work, colloidal spherical nanoparticles NPs of silicon carbide SiC have been synthesized using second harmonic generation 532 nm Nd:YAG laser ablation of silicon target dipped in ethanol solution at various laser fluences (1.5-5) J/cm2. X-Ray diffraction XRD, scanning electron microscopy SEM, transmission electron microscope TEM, Fourier transformed infrared spectroscopy FT-IR, Raman spectroscopy, photoluminescence PL spectroscopy, and UV-Vis absorption were employed to examine the structural, chemical and optical properties of SiC NPs. XRD results showed that all synthesised SiC nanoparticles are crystalline in nature and have hexagonal structure with preferred orientation along (103) plane. Raman investigation showed three characteristic peaks 764,786 and 954 cm-1, which are indexing to transverse optic TO phonon mode and longitudinal optic LO phonon mode of 4H-SiC structure. The optical absorption data showed that the values of optical energy gap of SiC nanoparticles prepared at 1.5 J/cm2 was 3.6 eV and was 3.85 eV for SiC synthesised at 5 J/cm2. SEM investigations confirmed that the nanoparticles synthesised at 5 J/cm2 are agglomerated to form larger particles. TEM measurements showed that SiC particles prepared at 1.5 J/cm2 have spherical shape with average size of 25 nm, while the particles prepared at 5 J/cm2 have an average size of 55 nm.

High frequency three-phase PWM grid connected drive using silicon-carbide switches

DEFF Research Database (Denmark)

Kouchaki, Alireza; Pedersen, Jacob Lykke; Nymand, Morten

2016-01-01

This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared with the ......This paper presents controller design procedure for a fully silicon-carbide (SiC) based three-phase grid-connected PWM drive. The influence of the feedforward compensation for the presented setup is studied and the transfer function of the system with feedforward is derived and compared...

Stored energy in irradiated silicon carbide

Energy Technology Data Exchange (ETDEWEB)

Snead, L.L.; Burchell, T.D. [Oak Ridge National Lab., TN (United States)

1997-04-01

This report presents a short review of the phenomenon of Wigner stored energy release from irradiated graphite and discusses it in relation to neutron irradiation of silicon carbide. A single published work in the area of stored energy release in SiC is reviewed and the results are discussed. It appears from this previous work that because the combination of the comparatively high specific heat of SiC and distribution in activation energies for recombining defects, the stored energy release of SiC should only be a problem at temperatures lower than those considered for fusion devices. The conclusion of this preliminary review is that the stored energy release in SiC will not be sufficient to cause catastrophic heating in fusion reactor components, though further study would be desirable.

Enhanced visible light photocatalytic H{sub 2} evolution of metal-free g-C{sub 3}N{sub 4}/SiC heterostructured photocatalysts

Energy Technology Data Exchange (ETDEWEB)

Wang, Biao, E-mail: wangbiao@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Jingtao, E-mail: zhangjtao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China); Huang, Feng, E-mail: huangfeng@mail.sysu.edu.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China)

2017-01-01

Highlights: • Novel g-C{sub 3}N{sub 4}/SiC composite was prepared by synthesizing g-C{sub 3}N{sub 4} on the surface of SiC. • g-C{sub 3}N{sub 4}/SiC composites exhibit much higher H{sub 2} production activity than pure g-C{sub 3}N{sub 4}. • The g-C{sub 3}N{sub 4}/SiC heterojunction mainly accounts for improved photocatalytic activity. - Abstract: g-C{sub 3}N{sub 4} has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C{sub 3}N{sub 4}/SiC composites were prepared via in situ synthesis of g-C{sub 3}N{sub 4} on the surface of SiC, with which g-C{sub 3}N{sub 4} shows tight interaction (chemical bonding). The g-C{sub 3}N{sub 4}/SiC composites exhibit high stability in H{sub 2} production under irradiation with visible light (λ ≥ 420 nm), demonstrating a maximum of 182 μmol g{sup −1} h{sup −1}, being 3.4 times higher than that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic H{sub 2} production ability for g-C{sub 3}N{sub 4}/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C{sub 3}N{sub 4}. This study may provide new insights into the development of g-C{sub 3}N{sub 4}-based composites as stable and efficient photocatalysts for H{sub 2} production from water splitting.

High Temperature Memories in SiC Technology

OpenAIRE

Ekström, Mattias

2014-01-01

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

Single-Event Effects in Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2015-01-01

This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

Characterization of carbon, nitrogen, oxygen and refractory metals in binary and ternary silicon-based films using ion beam methods; Caracterisation des elements: carbone, azote, oxygene et metal refractaire dans des depots binaires et ternaires a base de silicium par methodes d'analyse utilisant les faisceaux d'ions

Energy Technology Data Exchange (ETDEWEB)

Somatri-Bouamrane, R. [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire]|[Universite Claude Bernard, 69 - Lyon (France)

1996-12-19

Ion beam methods (non Rutherford backscattering, nuclear reactions) have been carried out in order to characterize silicon-based films. The cross sections for the reactions {sup 12}C({alpha},{alpha}), {sup 14}N({alpha},{alpha}), {sup 16}O({alpha},{alpha}), {sup 28}Si({alpha},{alpha}) and {sup 14}N({alpha},p) have been measured within 2 and 7 MeV. CVD beta SiC films could be analyzed and the interface between silicon carbide and the (100) silicon substrate was studied. The epitaxial growth of the beta SiC film could be modelled by comparing the results obtained with ion beam analysis, infrared spectroscopy and electron microscopy. Moreover, the stoichiometry of low pressure CVD Me-Si-N (Me=Re, W, Ti, Ta) ternary systems was studied. The evolution of the nitrogen content in W-Si-N systems allowed to study their stability with respect to the annealing conditions. (N.T.)

The effect of SiC particle size on the properties of Cu–SiC composites

International Nuclear Information System (INIS)

Celebi Efe, G.; Zeytin, S.; Bindal, C.

2012-01-01

Graphical abstract: The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and 97.5% to 95.2% for SiC with 5 μm particle size, microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and 156–182 HVN for SiC having 5 μm particle size and the electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, 87.9% IACS and 65.2%IACS for SiC with 5 μm particle size. It was found that electrical conductivity of composites containing SiC with 5 μm particle size is better than that of Cu–SiC composites containing SiC with particle size of 1 μm. Highlights: ► In this research, the effect of SiC particle size on some properties of Cu–SiC composites were investigated. ► The mechanical properties were improved. ► The electrical properties were obtained at desirable level. -- Abstract: SiC particulate-reinforced copper composites were prepared by powder metallurgy (PM) method and conventional atmospheric sintering. Scanning electron microscope (SEM), X-ray diffraction (XRD) techniques were used to characterize the sintered composites. The effect of SiC content and particle size on the relative density, hardness and electrical conductivity of composites were investigated. The relative densities of Cu–SiC composites sintered at 700 °C for 2 h are ranged from 97.3% to 91.8% for SiC with 1 μm particle size and from 97.5% to 95.2% for SiC with 5 μm particle size. Microhardness of composites ranged from 143 to 167 HV for SiC having 1 μm particle size and from 156 to 182 HV for SiC having 5 μm particle size. The electrical conductivity of composites changed between 85.9% IACS and 55.7% IACS for SiC with 1 μm particle size, between 87.9% IACS and 65.2% IACS for SiC with 5 μm particle size.

Growth of Ba-hexaferrite films on single crystal 6-H SiC

International Nuclear Information System (INIS)

Chen Zhoahui; Yang, Aria; Yoon, S.D.; Ziemer, Katherine; Vittoria, Carmine; Harris, V.G.

2006-01-01

Barium hexaferrite films have been processed by pulsed laser deposition on single crystal 6-H silicon carbide substrates. Atomic force microscopy images show hexagonal crystals (∼0.5μm in diameter) oriented with the c-axis perpendicular to the film plane. X-ray θ-2θ diffraction measurements indicate a strong (0,0,2n) alignment of crystallites. The magnetization for low-pressure deposition (20mTorr) is comparable to bulk values (4πM s ∼4320G). The loop squareness, important for self-bias microwave device applications, increases with oxygen pressure reaching a maximum value of 70%. This marks the first growth of a microwave ferrite on SiC substrates and offers a new approach in the design and development of μ-wave and mm-wave monolithic integrated circuits. c integrated circuits

Low-temperature synthesis of silicon carbide powder using shungite

International Nuclear Information System (INIS)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-01-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

Low-temperature synthesis of silicon carbide powder using shungite

Energy Technology Data Exchange (ETDEWEB)

Gubernat, A.; Pichor, W.; Lach, R.; Zientara, D.; Sitarz, M.; Springwald, M.

2017-07-01

The paper presents the results of investigation the novel and simple method of synthesis of silicon carbide. As raw material for synthesis was used shungite, natural mineral rich in carbon and silica. The synthesis of SiC is possible in relatively low temperature in range 1500–1600°C. It is worth emphasising that compared to the most popular method of SiC synthesis (Acheson method where the temperature of synthesis is about 2500°C) the proposed method is much more effective. The basic properties of products obtained from different form of shungite and in wide range of synthesis temperature were investigated. The process of silicon carbide formation was proposed and discussed. In the case of synthesis SiC from powder of raw materials the product is also in powder form and not requires any additional process (crushing, milling, etc.). Obtained products are pure and after grain classification may be used as abrasive and polishing powders. (Author)

SiC Armor Tiles via Magnetic Compaction and Pressureless Sintering

National Research Council Canada - National Science Library

Chelluri, Bhanu; Knoth, Ed A; Franks, L. P

2008-01-01

The purpose of the SBIR, entitled "Continuous Dynamic Processing of Ceramic Tiles for Ground Vehicle Protection", was to create a high rate, cost effective manufacturing method for producing silicon carbide (SiC...

Compressive deformation of liquid phase-sintered porous silicon carbide ceramics

Directory of Open Access Journals (Sweden)

Taro Shimonosono

2014-12-01

Full Text Available Porous silicon carbide ceramics were fabricated by liquid phase sintering with 1 wt% Al2O3–1 wt% Y2O3 additives during hot-pressing at 1400–1900 °C. The longitudinal strain at compressive fracture increased at a higher porosity and was larger than the lateral strain. The compressive Young's modulus and the strain at fracture depended on the measured direction, and increased with the decreased specific surface area due to the formation of grain boundary. However, the compressive strength and the fracture energy were not sensitive to the measured direction. The compressive strength of a porous SiC compact increased with increasing grain boundary area. According to the theoretical modeling of the strength–grain boundary area relation, it is interpreted that the grain boundary of a porous SiC compact is fractured by shear deformation rather than by compressive deformation.

X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

International Nuclear Information System (INIS)

Monaco, G.; Suman, M.; Garoli, D.; Pelizzo, M.G.; Nicolosi, P.

2011-01-01

Silicon carbide (SiC) is an important material for several applications ranging from electronics to Extreme UltraViolet (EUV) space optics. Crystalline cubic SiC (3C-SiC) has a wide band gap (near 2.4 eV) and it is a promising material to be used in high frequency and high energetic electronic devices. We have deposited, by means of pulsed laser deposition (PLD), different SiC films on sapphire and silicon substrates both at mild (650 o C) and at room temperature. The resulted films have different structures such as: highly oriented polycrystalline, polycrystalline and amorphous which have been studied by means of X-ray absorption spectroscopy (XAS) near the Si L 2,3 edge and the C K edge using PES (photoemission spectroscopy) for the analysis of the valence bands structure and film composition. The samples obtained by PLD have shown different spectra among the grown films, some of them showing typical 3C-SiC absorption structure, but also the presence of some Si-Si and graphitic bonds.

Synergistic Enhancement of Ternary Poly(3,4-ethylenedioxythiophene/Graphene Oxide/Manganese Oxide Composite as a Symmetrical Electrode for Supercapacitors

Directory of Open Access Journals (Sweden)

Nur Hawa Nabilah Azman

2018-06-01

Full Text Available A novel facile preparation of poly(3,4-ethylenedioxythiophene/graphene oxide/manganese oxide (PEDOT/GO/MnO2 ternary composite as an electrode material for a supercapacitor was evaluated. The ternary composite was sandwiched together and separated by filter paper soaked in 1 M KCl in order to investigate the supercapacitive properties. The ternary composite exhibits a higher specific capacitance (239.4 F/g compared to PEDOT/GO (73.3 F/g at 25 mV/s. The incorporation of MnO2 which act as a spacer in the PEDOT/GO helps to improve the supercapacitive performance by maximizing the utilization of electrode materials by the electrolyte ions. The PEDOT/GO/MnO2 ternary composite displays a specific energy and specific power of 7.9 Wh/kg and 489.0 W/kg, respectively. The cycling stability test revealed that the ternary composite is able to achieve 95% capacitance retention even after 1000 cycles due to the synergistic effect between the PEDOT, GO, and MnO2 that helps to enhance the performance of the ternary composite for supercapacitor application.

Note: High-power piezoelectric transformer fabricated with ternary relaxor ferroelectric Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3 single crystal.

Science.gov (United States)

Wang, Qing; Ma, Chuanguo; Wang, Feifei; Liu, Bao; Chen, Jianwei; Luo, Haosu; Wang, Tao; Shi, Wangzhou

2016-03-01

A plate-shaped piezoelectric transformer was designed and fabricated using ternary relaxor ferroelectric single crystal Pb(Mg(1/3)Nb(2/3))O3-Pb(In(1/2)Nb(1/2))O3-PbTiO3. Both the input and output sections utilized the transverse-extensional vibration mode. The frequency and load dependences of the electrical properties for the proposed transformer were systematically studied. Results indicated that under a matching load resistance of 14.9 kΩ, a maximum output power of 2.56 W was obtained with the temperature rise less than 5 °C. The corresponding power density reached up to 50 W/cm(3). This ternary single-crystal transformer had potential applications in compact-size converters requiring high power density.

Evaluation of liquid-phase sintering SiC using as additive the system Al2O3/DyO3

International Nuclear Information System (INIS)

Oliveira, M.R.; Atilio, I.; Garcia, G.C.R.; Ribeiro, S.

2012-01-01

The objective of this work was to study the liquid-phase sintering SiC with additives that has not been studied yet, Al 2 O 3 /Dy 2 O 3 , with 10% in volume. The powders were mixed, dried, and pressed in uniaxial and isostatic pressing. It was studied the melting temperature of the additives and bars were sintered at temperatures of 1900, 1950 e 2000 deg C, with averaged linear shrinkage of 17%, phase transformations of β-SiC into α-SiC and formation of Dy 3 Al 5 O 12 at all temperatures. The results showed that for further densification, the temperature of 1950 deg C is enough for a higher densification, with a low wetting angle, transformations of SiC and formation of Dy 3 Al 5 O 12 . (author)

Estimation of sesqui-carbide fraction for MARK-I fuel

International Nuclear Information System (INIS)

Vana Varamban, S.; Ananthasivan, K.

2016-01-01

Sesqui-carbide content of FBTR bi-phasic mixed carbide is specified as 5-20 wt.%. For each batch of fuel production, the sesqui-carbide (M2C3) content is being determined by a K-ratio method using XRD information. There is a need to evolve an alternate method for qualitative determination of M2C3 content for a fabricated FBTR fuel pellet. Two independent approaches resulted in a correlation between overall carbon content and the M2C3 phase fraction. The thermodynamic calculations agree well with the stoichiometric correlation between the overall carbon content and the M2C3 phase fraction in FBTR MARK I fuel

Influence of SiC coating thickness on mechanical properties of SiCf/SiC composite

Science.gov (United States)

Yu, Haijiao; Zhou, Xingui; Zhang, Wei; Peng, Huaxin; Zhang, Changrui

2013-11-01

Silicon carbide (SiC) coatings with varying thickness (ranging from 0.14 μm to 2.67 μm) were deposited onto the surfaces of Type KD-I SiC fibres with native carbonaceous surface using chemical vapour deposition (CVD) process. Then, two dimensional SiC fibre reinforced SiC matrix (2D SiCf/SiC) composites were fabricated using polymer infiltration and pyrolysis (PIP) process. Influences of the fibre coating thickness on mechanical properties of SiC fibre and SiCf/SiC composite were investigated using single-filament test and three-point bending test. The results indicated that flexural strength of the composites initially increased with the increasing CVD SiC coating thickness and reached a peak value of 363 MPa at the coating thickness of 0.34 μm. Further increase in the coating thickness led to a rapid decrease in the flexural strength of the composites. The bending modulus of composites showed a monotonic increase with increasing coating thickness. A chemical attack of hydrogen or other ions (e.g. a C-H group) on the surface of SiC fibres during the coating process, owing to the formation of volatile hydrogen, lead to an increment of the surface defects of the fibres. This was confirmed by Wang et al. [35] in their work on the SiC coating of the carbon fibre. In the present study, the existing ˜30 nm carbon on the surface of KD-I fibre [36] made the fibre easy to be attacked. Deposition of non-stoichiometric SiC, causing a decrease in strength. During the CVD process, a small amount of free silicon or carbon always existed [35]. The existence of free silicon, either disordered the structure of SiC and formed a new source of cracks or attacked the carbon on fibre surface resulting in properties degeneration of the KD-I fibre. The effect of residual stress. The different thermal expansion coefficient between KD-I SiC fibre and CVD SiC coating, which are 3 × 10-6 K-1 (RT ˜ 1000 °C) and 4.6 × 10-6 K-1 (RT ˜ 1000 °C), respectively, could cause residual stress

Mechanical performance of SiC three-layer cladding in PWRs

Energy Technology Data Exchange (ETDEWEB)

Angelici Avincola, Valentina, E-mail: valentina.avincola@kit.edu [Karlsruhe Institute of Technology, Hermann-von-Helmholtz-Platz 1, 76344 Eggenstein-Leopoldshafen (Germany); Guenoun, Pierre, E-mail: pguenoun@mit.edu [Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139 (United States); Shirvan, Koroush, E-mail: kshirvan@mit.edu [Massachusetts Institute of Technology, 77 Massachusetts Ave, Cambridge, MA 02139 (United States)

2016-12-15

Highlights: • FEA calculations of the stress distribution in SiC three-layer cladding. • Simulation of SiC mechanical performance under operation and accident conditions. • Failure probability analysis of SiC in steady-state and accident conditions. - Abstract: The silicon carbide cladding concept is currently under investigation with regard to increasing the accident tolerance and economic performance of light-water reactor fuels. In this work, the stress fields in the multi-layered silicon carbide cladding for LWR fuels are calculated using the commercial finite element analysis software ADINA. The material properties under irradiation are implemented as a function of temperature. The cladding is studied under operating and accident conditions, specifically for the loss-of-coolant accident (LOCA). During the LOCA, the blowdown and the reflood phases are modeled, including the quench waterfront. The calculated stresses along the cladding thickness show a high sensitivity to the assumptions regarding material properties. The resulting stresses are compared with experimental data and the probability of failure is calculated considering a Weibull model.

Automatic generation of 2D micromechanical finite element model of silicon–carbide/aluminum metal matrix composites: Effects of the boundary conditions

DEFF Research Database (Denmark)

Qing, Hai

2013-01-01

Two-dimensional finite element (FE) simulations of the deformation and damage evolution of Silicon–Carbide (SiC) particle reinforced aluminum alloy composite including interphase are carried out for different microstructures and particle volume fractions of the composites. A program is developed...... for the automatic generation of 2D micromechanical FE-models with randomly distributed SiC particles. In order to simulate the damage process in aluminum alloy matrix and SiC particles, a damage parameter based on the stress triaxial indicator and the maximum principal stress criterion based elastic brittle damage...... model are developed within Abaqus/Standard Subroutine USDFLD, respectively. An Abaqus/Standard Subroutine MPC, which allows defining multi-point constraints, is developed to realize the symmetric boundary condition (SBC) and periodic boundary condition (PBC). A series of computational experiments...

Morphology of silicon carbide formed by chemical vapour deposition

International Nuclear Information System (INIS)

Pampuch, R.; Stobierski, L.

1977-01-01

Silicon carbide polycrystalline layers and particulate crystals were obtained in a modified van Arkel-de Boer apparatus on SiC-covered graphite and molybdenum susceptors. Gaseous SiCl 4 + CCl 4 + H 2 reactive mixtures with Si/C mole ratios varying between 0.9 and 1.4 and with Cl/Cl + H ratios varying between 2.10 -5 and 1.10 -3 were used. The morphology and structure of SiC products obtained at temperatures between 1400 and 1900 0 C and input gas flow rates between 5.10 -4 and 6.10 -2 moles per hour have been systematically investigated by scanning electronmicrographs, X-rays (using the Laue, Weissenberg, and rotation photographers), IR-spectra, and under the polarising microscope. The ranges of temperature and input gas flow rates in which the given habits and forms of the SiC products are formed have been assessed. The habits of the particulate crystals as function of temperature have been interpreted in terms of the existing theories of heterogeneous nucleation assuming layer growth of the crystals by two-dimensional nucleation. The influence of the composition of the gaseous mixtures upon the formation of the 2H polytype as well as the probable reasons for the common occurrence of stacking fault twins in the 3C polytype have been discussed. (author)

Laser processing for bevel termination of high voltage pn junction in SiC

International Nuclear Information System (INIS)

Kubiak, A; Ruta, Ł; Rosowski, A; French, P

2016-01-01

Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach. (paper)

Electrical leakage phenomenon in heteroepitaxial cubic silicon carbide on silicon

Science.gov (United States)

Pradeepkumar, Aiswarya; Zielinski, Marcin; Bosi, Matteo; Verzellesi, Giovanni; Gaskill, D. Kurt; Iacopi, Francesca

2018-06-01

Heteroepitaxial 3C-SiC films on silicon substrates are of technological interest as enablers to integrate the excellent electrical, electronic, mechanical, thermal, and epitaxial properties of bulk silicon carbide into well-established silicon technologies. One critical bottleneck of this integration is the establishment of a stable and reliable electronic junction at the heteroepitaxial interface of the n-type SiC with the silicon substrate. We have thus investigated in detail the electrical and transport properties of heteroepitaxial cubic silicon carbide films grown via different methods on low-doped and high-resistivity silicon substrates by using van der Pauw Hall and transfer length measurements as test vehicles. We have found that Si and C intermixing upon or after growth, particularly by the diffusion of carbon into the silicon matrix, creates extensive interstitial carbon traps and hampers the formation of a stable rectifying or insulating junction at the SiC/Si interface. Although a reliable p-n junction may not be realistic in the SiC/Si system, we can achieve, from a point of view of the electrical isolation of in-plane SiC structures, leakage suppression through the substrate by using a high-resistivity silicon substrate coupled with deep recess etching in between the SiC structures.

Influences of Device and Circuit Mismatches on Paralleling Silicon Carbide MOSFETs

DEFF Research Database (Denmark)

Li, Helong; Munk-Nielsen, Stig; Wang, Xiongfei

2016-01-01

This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then, the influ......This paper addresses the influences of device and circuit mismatches on paralleling the Silicon Carbide (SiC) MOSFETs. Comprehensive theoretical analysis and experimental validation from paralleled discrete devices to paralleled dies in multichip power modules are first presented. Then......, the influence of circuit mismatch on paralleling SiC MOSFETs is investigated and experimentally evaluated for the first time. It is found that the mismatch of the switching loop stray inductance can also lead to on-state current unbalance with inductive output current, in addition to the on-state resistance...... of the device. It further reveals that circuit mismatches and a current coupling among the paralleled dies exist in a SiC MOSFET multichip power module, which is critical for the transient current distribution in the power module. Thus, a power module layout with an auxiliary source connection is developed...

(Vapour + liquid) equilibria for binary and ternary mixtures of 2-propanol, tetrahydropyran, and 2,2,4-trimethylpentane at P = 101.3 kPa

International Nuclear Information System (INIS)

Lin, Dun-Yi; Tu, Chein-Hsiun

2012-01-01

Highlights: ► We report the VLE data at P = 101.3 kPa involving a cyclic ether. ► The activity coefficients of mixtures were obtained from modified Raoult’s law. ► The VLE data were correlated by four liquid activity coefficient models. ► The ternary VLE data were predicted from binary parameters of the four models. - Abstract: (Vapour + liquid) equilibrium (VLE) at P = 101.3 kPa have been determined for a ternary system (2-propanol + tetrahydropyran + 2,2,4-trimethylpentane) and its constituent binary systems (2-propanol + tetrahydropyran, 2-propanol + 2,2,4-trimethylpentane), and (tetrahydropyran + 2,2,4-trimethylpentane). Analysis of VLE data reveals that two binary systems (2-propanol + tetrahydropyran) and (2-propanol + 2,2,4-trimethylpentane) have a minimum boiling azeotrope. No azeotrope was found for the ternary system. The activity coefficients of liquid mixtures were obtained from the modified Raoult’s law and were used to calculate the reduced excess molar Gibbs free energy (g E /RT). Thermodynamic consistency tests were performed for all VLE data using the Van Ness direct test for the binary systems and the test of McDermott–Ellis as modified by Wisniak and Tamir for the ternary system. The VLE data of the binary mixtures were correlated using the three-suffix Margules, Wilson, NRTL, and UNIQUAC activity-coefficient models. The models with their best-fitted interaction parameters of the binary systems were used to predict the ternary (vapour + liquid) equilibrium.

Tuning the thermal conductivity of silicon carbide by twin boundary: a molecular dynamics study

International Nuclear Information System (INIS)

Liu, Qunfeng; Wang, Liang; Shen, Shengping; Luo, Hao

2017-01-01

Silicon carbide (SiC) is a semiconductor with excellent mechanical and physical properties. We study the thermal transport in SiC by using non-equilibrium molecular dynamics simulations. The work is focused on the effects of twin boundaries and temperature on the thermal conductivity of 3C-SiC. We find that compared to perfect SiC, twinned SiC has a markedly reduced thermal conductivity when the twin boundary spacing is less than 100 nm. The Si–Si twin boundary is more effective to phonon scattering than the C–C twin boundary. We also find that the phonon scattering effect of twin boundary decreases with increasing temperature. Our findings provide insights into the thermal management of SiC-based electronic devices and thermoelectric applications. (paper)

Advances in SiC materials and devices: an industrial point of view

Energy Technology Data Exchange (ETDEWEB)

Siergiej, R.R.; Clarke, R.C.; Sriram, S.; Agarwal, A.K.; Bojko, R.J.; Morse, A.W.; Balakrishna, V.; MacMillan, M.F.; Brandt, C.D. [Northrop Grumman ESSS Sci. and Technol. Center, Pittsburgh, PA (United States); Burk, A.A. Jr. [Northrop Grumman ESSS Adv. Technol. Lab. Baltimore, MD (United States)

1999-07-30

Silicon carbide (SiC) is an emerging semiconductor that has proven itself especially well-suited to high temperature power switching and high-frequency power generation. In this paper we examine recent advances in materials development and device performance. In boule growth we have focused on increasing boule diameter and reducing defect counts. Two conductivity types have been developed (1) semi-insulating for MESFETs, and (2) highly conducting boules for SITs and power switches. Very uniform planetary multi-wafer epitaxial layer growth on these wafers is described, in which specular epitaxial layers have been obtained with growth rates of 3-5{mu}m h{sup -1} exhibiting unintentional n-type doping of {proportional_to}1 x 10{sup 15} cm{sup -3}, and room temperature Hall mobilities of {proportional_to}1000 cm{sup 2} V{sup -1} s{sup -1}. Controlled n-type doping between {proportional_to}5 x 10{sup 15} cm{sup -3} and >1 x 10{sup 19} cm{sup -3} has also been demonstrated using nitrogen doping. SiC finds application in high temperature power switching devices and microwave power transistors. MOS turn-off thyristors (MTO{sup TM}) are being investigated as power switches because they offer ease of turn-off, 500 C operation and reduced cooling requirements. In the fabrication of high-power, high-frequency transistors at UHF, L-, S-, and X-bands SiC has been found superior to both silicon and GaAs. For example, a 4H-SiC UHF television module has demonstrated good signal fidelity at the 2000 W PEP level, S-band transistor packages have shown 300 W peak power for radar applications, and 6 W power output has been obtained at X-band. (orig.)

Molecular dynamics simulation of damage cascade creation in SiC composites containing SiC/graphite interface

Energy Technology Data Exchange (ETDEWEB)

Wallace, Joseph; Chen, Di; Wang, Jing; Shao, Lin, E-mail: lshao@tamu.edu

2013-07-15

Silicon carbide composites have been investigated for their use as structural materials for advanced nuclear reactor designs. Although the composites have significantly enhanced mechanical properties and structure integrity, there is little known about the behavior of defects in the presence of a graphite-silicon carbide interface. In this study, molecular dynamics simulations have been used to model defect creation and clustering in a composite containing a SiC/graphite interface. Evolution of displacements as a function of time were studied and compared to bulk SiC. The results show that the first a few SiC atomic layers closest to the interface are easily damaged. However, beyond these first few atomic layers the system appears to be unaffected by the SiC interface.

SiC nanofibers grown by high power microwave plasma chemical vapor deposition

International Nuclear Information System (INIS)

Honda, Shin-ichi; Baek, Yang-Gyu; Ikuno, Takashi; Kohara, Hidekazu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Silicon carbide (SiC) nanofibers have been synthesized on Si substrates covered by Ni thin films using high power microwave chemical vapor deposition (CVD). Characterization using transmission electron microscopy (TEM) combined with electron energy-dispersive X-ray spectroscopy (EDX) revealed that the resultant fibrous nanostructures were assigned to β-SiC with high crystallinity. The formation of SiC nanofibers can be explained by the vapor liquid solid (VLS) mechanism in which precipitation of SiC occurs from the supersaturated Ni nanoparticle containing Si and C

Dynamic study of the thermal stability of impure Ti 3SiC 2 in argon and air by neutron diffraction

Science.gov (United States)

Oo, Z.; Low, I. M.; O'Connor, B. H.

2006-11-01

The dynamic thermal stability and topotactic phase transition of impure Ti 3SiC 2 in air and argon have been investigated by neutron diffraction (ND). In the presence of a low oxygen partial pressure as in argon, Ti 3SiC 2 underwent a surface dissociation and TiC and/or Ti 5Si 3C were detected at 1200 °C. In contrast, oxide layers of rutile (TiO 2), TiO and cristobalite (SiO 2) were detected at ∼1000, 1250 and 1300 °C respectively when exposed to an oxygen-rich environment. Near-surface depth profiling of Ti 3SiC 2 oxidized in air at 1200 °C by secondary ion mass spectroscopy (SIMS) has revealed a distinct gradation in phase composition at the interface of homogeneous rutile and heterogeneous cristobalite-rutile layers.

Dynamic study of the thermal stability of impure Ti3SiC2 in argon and air by neutron diffraction

International Nuclear Information System (INIS)

Oo, Z.; Low, I.M; O'Connor, B.H.

2006-01-01

The dynamic thermal stability and topotactic phase transition of impure Ti 3 SiC 2 in air and argon have been investigated by neutron diffraction (ND). In the presence of a low oxygen partial pressure as in argon, Ti 3 SiC 2 underwent a surface dissociation and TiC and/or Ti 5 Si 3 C were detected at 1200 deg. C. In contrast, oxide layers of rutile (TiO 2 ), TiO and cristobalite (SiO 2 ) were detected at ∼1000, 1250 and 1300 deg. C respectively when exposed to an oxygen-rich environment. Near-surface depth profiling of Ti 3 SiC 2 oxidized in air at 1200 deg. C by secondary ion mass spectroscopy (SIMS) has revealed a distinct gradation in phase composition at the interface of homogeneous rutile and heterogeneous cristobalite-rutile layers

Effects of Surface Treatment Processes of SiC Ceramic on Interfacial Bonding Property of SiC-AFRP

Directory of Open Access Journals (Sweden)

WEI Ru-bin

2016-12-01

Full Text Available To improve the interfacial bonding properties of SiC-aramid fiber reinforced polymer matrix composites (SiC-AFRP, the influences of etching process of SiC ceramic, coupling treatment process, and the adhesives types on the interfacial peel strength of SiC-AFRP were studied. The results show that the surface etching process and coupling treatment process of silicon carbide ceramic can effectively enhance interfacial bonding property of the SiC-AFRP. After soaked the ceramic in K3Fe(CN6 and KOH mixed etching solution for 2 hours, and coupled with vinyl triethoxy silane coupling agent, the interfacial peel strength of the SiC-AFRP significantly increases from 0.45kN/m to 2.20kN/m. EVA hot melt film with mass fraction of 15%VA is ideal for interface adhesive.

Effect of carbides on the creep properties of a Ni-base superalloy M963

International Nuclear Information System (INIS)

He, L.Z.; Zheng, Q.; Sun, X.F.; Guan, H.R.; Hu, Z.Q.; Tieu, A.K.; Lu, C.; Zhu, H.T.

2005-01-01

Effect of carbides on the creep properties of a cast Ni-base superalloy M963 tested at 800 and 900 deg. C over a broad stress range has been investigated. Correlation between the carbides and creep properties of the alloy is enabled through scanning electron microscopy (SEM) and transmission electron microscopy (TEM). During high temperature creep tests, the primary MC carbide decomposes sluggishly and a large amount of secondary carbides precipitate. The cubic and acicular M 6 C carbide precipitates at the dendritic core region. Extremely fine chromium-rich M 23 C 6 carbide precipitates preferentially at grain boundaries. The M 6 C and M 23 C 6 carbides are found to be beneficial to the creep properties of the alloy. At lower temperature (800 deg. C), the interface of MC carbide with matrix is one of the principal sites for crack initiation. At higher temperature (900 deg. C), the oxidation and the precipitation of μ phase are the main factors for significant loss in creep strength of the alloy

Residual stress and mechanical properties of SiC ceramic by heat treatment

International Nuclear Information System (INIS)

Yoon, H.K.; Kim, D.H.; Shin, B.C.

2007-01-01

Full text of publication follows: Silicon carbide is a compound of relatively low density, high hardness, elevated thermal stability and good thermal conductivity, resulting in good thermal shock resistance. Because of these properties, SiC materials are widely used as abrasives and refractories. In this study, SiC single and poly crystals was grown by the sublimation method using the SiC seed crystal and SiC powder as the source material. Mechanical properties of SiC single and poly crystals are carried out by using the nano-indentation method and small punch test after the heat treatment. As a result, mechanical properties of SiC poly crystal had over double than single. And SiC single and poly crystals were occurred residual stress, but residual stress was shown relaxant properties by the effect of heat treatment. (authors)

Dual ohmic contact to N- and P-type silicon carbide

Science.gov (United States)

Okojie, Robert S. (Inventor)

2013-01-01

Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

Separation of Nuclear Fuel Surrogates from Silicon Carbide Inert Matrix

International Nuclear Information System (INIS)

Baney, Ronald

2008-01-01

The objective of this project has been to identify a process for separating transuranic species from silicon carbide (SiC). Silicon carbide has become one of the prime candidates for the matrix in inert matrix fuels, (IMF) being designed to reduce plutonium inventories and the long half-lives actinides through transmutation since complete reaction is not practical it become necessary to separate the non-transmuted materials from the silicon carbide matrix for ultimate reprocessing. This work reports a method for that required process

A comparative study of low energy radiation responses of SiC, TiC and ZrC

International Nuclear Information System (INIS)

Jiang, M.; Xiao, H.Y.; Zhang, H.B.; Peng, S.M.; Xu, C.H.; Liu, Z.J.; Zu, X.T.

2016-01-01

In this study, an ab initio molecular dynamics method is employed to compare the responses of SiC, TiC and ZrC to low energy irradiation. It reveals that C displacements are dominant in the cascade events of the three carbides. The associated defects in SiC are mainly Frenkel pairs and antisite defects, whereas damage end states in TiC and ZrC generally consist of Frenkel pairs and very few antisite defects are created. It is proposed that the susceptibility to antisite formation in SiC contributes to its crystalline-to-amorphous transformation under irradiation that is observed experimentally. The stronger radiation tolerance of TiC and ZrC than SiC can be originated from their different electronic structures, i.e., the and bonds are a mixture of covalent, metallic, and ionic character, whereas the bond is mainly covalent. The presented results provide underlying mechanisms for defect generation in SiC, TiC and ZrC, and advance the fundamental understanding of the radiation resistances of carbide materials.

Abundances of presolar silicon carbide grains in primitive meteorites determined by NanoSIMS

Science.gov (United States)

Davidson, Jemma; Busemann, Henner; Nittler, Larry R.; Alexander, Conel M. O.'D.; Orthous-Daunay, François-Régis; Franchi, Ian A.; Hoppe, Peter

2014-08-01

It has been suggested that the matrices of all chondrites are dominated by a common material with Ivuna-like (CI) abundances of volatiles, presolar grains and insoluble organic matter (IOM) (e.g., Alexander, 2005). However, matrix-normalized abundances of presolar silicon carbide (SiC) grains estimated from their noble gas components show significant variations in even the most primitive chondrites (Huss and Lewis, 1995; Huss et al., 2003), in contradiction to there being a common chondrite matrix material. Here we report presolar SiC abundances determined by NanoSIMS raster ion imaging of IOM extracted from primitive members of different meteorite groups. We show that presolar SiC abundance determinations are comparable between NanoSIMS instruments located at three different institutes, between residues prepared by different demineralization techniques, and between microtomed and non-microtomed samples. Our derived SiC abundances in CR chondrites are comparable to those found in the CI chondrites (∼30 ppm) and are much higher than previously determined by noble gas analyses. The revised higher CR SiC abundances are consistent with the CRs being amongst the most primitive chondrites in terms of the isotopic compositions and disordered nature of their organic matter. Similar abundances between CR1, CR2, and CR3 chondrites indicate aqueous alteration on the CR chondrite parent body has not progressively destroyed SiC grains in them. A low SiC abundance for the reduced CV3 RBT 04133 can be explained by parent body thermal metamorphism at an estimated temperature of ∼440 °C. Minor differences between primitive members of other meteorite classes, which did not experience such high temperatures, may be explained by prolonged oxidation at lower temperatures under which SiC grains formed outer layers of SiO2 that were not thermodynamically stable, leading to progressive degassing/destruction of SiC.

Use of thermodynamic calculation for investigating phase diagram of the ternary system NaCl-PbCl2-NdCl3

International Nuclear Information System (INIS)

Kostygov, V.I.; Potemin, S.S.

1984-01-01

Thermodynamic calculation of meltability diagram of ternary system NaCl-PbCl 2 -NdCl 3 with the use of literature and experimental data on meltability diagrams of binary systems forming it, as well as data on crystallization heats of the components, has been carried out. Equations are derived under condition of pseudoperfection of the ternary system. 64 mol.% PbCl 2 , 26 mol.% NaCl, 10 mol.% NdCl 3 and average temperature of crystallization 391 deg C correspond to the calculated composition of the ternary eutectics, 49 mol.% PbCl 2 , 35 mol.% NaCl, 16 mol.% NdCl 3 and average temperature of peritectic transformation 416 deg C - to the composition of the ternary peritectic. The results obtained agree well with the experimental data

The annealing effects on irradiated SiC piezo resistive pressure sensor

International Nuclear Information System (INIS)

Almaz, E.; Blue, T. E.; Zhang, P.

2009-01-01

The effects of temperature on annealing of Silicon Carbide (SiC) piezo resistive pressure sensor which was broken after high fluence neutron irradiation, were investigated. Previously, SiC piezo resistive sensor irradiated with gamma ray and fast neutron in the Co-60 gamma-ray irradiator and Beam Port 1 (BP1) and Auxiliary Irradiation Facility (AIF) at the Ohio State University Nuclear Reactor Laboratory (OSUNRL) respectively. The Annealing temperatures were tested up to 400 C. The Pressure-Output voltage results showed recovery after annealing process on SiC piezo resistive pressure sensor. The bridge resistances of the SiC pressure sensor stayed at the same level up to 300 C. After 400 C annealing, the resistance values changed dramatically.

Recent progress of ultrahigh voltage SiC devices for particle accelerator

International Nuclear Information System (INIS)

Fukuda, Kenji; Tsuji, Takashi; Shiomi, Hiromu; Mizushima, Tomonori; Yonezawa, Yoshiyuki; Kondo, Chikara; Otake, Yuji

2016-01-01

Silicon carbide (SiC) is the promising material for next power electronics technology used in the field such as HEV, EV, and railway, electric power infrastructure. SiC enables power devices with low loss to easily operate in an ultrahigh-voltage region because of the high breakdown electric field of SiC. In this paper, we report static and dynamic electric performances of 3300 V class SiC SBDs, IE-MOSFETs, >10 kV PiN diodes and IE-IGBTs. Especially, the electrical characteristics of IE-IGBT with the blocking voltage of 16.5 kV indicate the sufficient ability to convert the thyratron in high power RF system of an accelerator. (author)

Parameters optimization, microstructure and micro-hardness of silicon carbide laser deposited on titanium alloy

CSIR Research Space (South Africa)

Adebiyia, DI

2016-06-01

Full Text Available Silicon carbide (SiC), has excellent mechanical properties such as high hardness and good wear resistance, and would have been a suitable laser-coating material for titanium alloy to enhance the poor surface hardness of the alloy. However, SiC has...

Manufacturing: SiC Power Electronics for Variable Frequency Motor Drives

Energy Technology Data Exchange (ETDEWEB)

Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Bench Reese, Samantha R [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Remo, Timothy W [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-08-15

This brochure, published as an annual research highlight of the Clean Energy Manufacturing Analysis Center (CEMAC), summarizes CEMAC analysis of silicon carbide (SiC) power electronics for variable frequency motor drives. The key finding presented is that variations in manufacturing expertise, yields, and access to existing facilities impact regional costs and manufacturing location decisions for SiC ingots, wafers, chips, and power modules more than do core country-specific factors such as labor and electricity costs.

The morphology of ceramic phases in B x C-SiC-Si infiltrated composites

International Nuclear Information System (INIS)

Hayun, S.; Frage, N.; Dariel, M.P.

2006-01-01

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B 4 C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system. - Graphical abstract: Bright field TEM image of the rim area between two boron carbide grains

The ternary post-transition metal carbodiimide SrZn(NCN)2

International Nuclear Information System (INIS)

Corkett, Alex J.; Konze, Philipp M.; Dronskowski, Richard

2017-01-01

SrZn(NCN) 2 , the first example of a ternary post-transition metal carbodiimide, was prepared by a solid-state metathesis reaction. The crystal structure was solved from PXRD data and found to adopt the orthorhombic (Cmcm) BaZnSO structure, a high symmetry modification of that expressed by the oxide analogue SrZnO 2 . Locally, SrZn(NCN) 2 features ZnN 4 tetrahedra and SrN 6 trigonal prisms similar to those in quarternary LiSr 2 M(NCN) 4 (M = Al 3+ and Ga 3+ ) phases, however, the overall topologies are distinct with single chains in the former and double chains in the latter. Electronic structure calculations indicate an indirect bandgap of about 2.95 eV in SrZn(NCN) 2 , slightly lower than the experimentally observed bandgap of 3.4 eV in SrZnO 2 and consistent with a greater degree of covalency. The structural similarities between SrZn(NCN) 2 and oxychalcogenide analogues highlight the pseudochalcogenide character of NCN 2- and suggest that the title compound may serve as a template for accessing novel ternary carbodiimides featuring tetrahedrally coordinated transition metals. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Enhanced thermoelectric properties of nano SiC dispersed Bi2Sr2Co2Oy Ceramics

Science.gov (United States)

Hu, Qiujun; Wang, Kunlun; Zhang, Yingjiu; Li, Xinjian; Song, Hongzhang

2018-04-01

The thermoelectric properties of Bi2Sr2Co2Oy + x wt% nano SiC (x = 0.00, 0.025, 0.05, 0.1, 0.2, and 0.3) prepared by the solid-state reaction method were investigated from 300 K to 923 K. The resistivity can be reduced effectively by adding a small amount of SiC nano particles, which is attributed to the increase of the carrier concentration. At the same time, the Seebeck coefficients can be improved effectively due to the energy filtering effect that low energy carriers are strongly dispersed at the interface between the SiC nano particles and the matrix. The decrease of thermal conductivity is due to the increase of the scattering ability of the phonons by the SiC nanoparticles distributed at the boundary of the matrix. As a result, the Bi2Sr2Co2Oy + x wt% SiC composites exhibit better thermoelectric properties. The maximum ZT value 0.24 is obtained when x = 0.05 at 923 K. Compared with the sample without SiC nano particles, the ZT value is increased by about 59.7%.

Superconductivity in heavily boron-doped silicon carbide

Directory of Open Access Journals (Sweden)

Markus Kriener, Takahiro Muranaka, Junya Kato, Zhi-An Ren, Jun Akimitsu and Yoshiteru Maeno

2008-01-01

Full Text Available The discoveries of superconductivity in heavily boron-doped diamond in 2004 and silicon in 2006 have renewed the interest in the superconducting state of semiconductors. Charge-carrier doping of wide-gap semiconductors leads to a metallic phase from which upon further doping superconductivity can emerge. Recently, we discovered superconductivity in a closely related system: heavily boron-doped silicon carbide. The sample used for that study consisted of cubic and hexagonal SiC phase fractions and hence this led to the question which of them participated in the superconductivity. Here we studied a hexagonal SiC sample, free from cubic SiC phase by means of x-ray diffraction, resistivity, and ac susceptibility.

Effect of Y2O3-Al2O3 ratio on inter-granular phases and films in tape-casting α-SiC with high toughness

International Nuclear Information System (INIS)

Huang Rong; Gu Hui; Zhang Jingxian; Jiang Dongliang

2005-01-01

Silicon carbide (SiC) ceramics prepared from liquid phase sintering after aqueous-tape-casting can yield high toughness when appropriate amount of Y 2 O 3 -Al 2 O 3 are added, even though no elongated grains are present. Grain boundaries (GB), second-phases and hetero-phase boundaries (HB) in 2 samples with additive mole ratios of 3:5 and 3:7 are investigated using high-resolution and analytical electron microscopy (HREM and AEM). The meta-stable YAlO 3 (YAP) was nucleated from SiC surfaces in the sample with Y/Al = 3:5 as revealed by crystallographic relations across the HB, whilst relatively thick amorphous films were found at GB. In contrary, the higher level of Al 2 O 3 additives decreases the GB film thickness in the sample with Y/Al = 3:7, and the homogeneous nucleation of Y 3 Al 5 O 12 (YAG) occurs at triple pockets accompanying with thick HB films. The strong variation of GB widths is a result of GB wetting in the sample with Y/Al = 3:5 and HB wetting in the sample of Y/Al = 3:7, both by liquid Al 2 O 3 . The energy of GB in the former sample is higher than the energy of HB as exhibited by the preferential nucleation of meta-stable YAP on SiC surfaces, which results in wetting of GB by the liquid; the situation is opposite in the latter sample as the wetting of HB occurs, leading to de-wetting of GB. The thermal mismatch between SiC and YAP or YAG as well as the presence of amorphous films facilitate the creation of micro-crack to promote inter-granular fracture and result in high toughness in both SiC ceramics

Ternary phosphates in Ca3(PO4)2-Na3Ln(PO4)2 (Ln-Nd, Eu, Er) systems

International Nuclear Information System (INIS)

Lazoryak, B.I.; Ivanov, L.N.; Strunenkova, T.V.; Golubev, V.N.; Viting, B.N.

1990-01-01

Ternary phosphates, formed in Ca 3 (PO 4 ) 2 -Na 3 Ln(PO 4 ) 2 (Ln-Nd, Eu, Er) systems were investigated by the methods of X-ray phase, luminescent analyses and IR spectroscopy. 5 regions of homogeneity were found. Two of them (I and II) were distinguished for all systems. Samples in the region of up to 14.285 mol.% Na 3 Ln(PO 4 ) 2 crystallize on the basis of β-Ca 3 (PO 4 ) 2 structure, and in other homogeneity regions - on the basis of β-K 2 SO 4 structure

Effect of Si3N4 Addition on Oxidation Resistance of ZrB2-SiC Composites

Directory of Open Access Journals (Sweden)

Manab Mallik

2017-06-01

Full Text Available The oxidation behavior of ZrB2-20 vol % SiC and ZrB2-20 vol % SiC-5 vol % Si3N4 composites prepared by hot-pressing and subjected to isothermal exposure at 1200 or 1300 °C for durations of 24 or 100 h in air, as well as cyclic exposure at 1300 °C for 24 h, have been investigated. The oxidation resistance of the ZrB2-20 vol % SiC composite has been found to improve by around 20%–25% with addition of 5 vol % Si3N4 during isothermal or cyclic exposures at 1200 or 1300 °C. This improvement in oxidation resistance has been attributed to the formation of higher amounts of SiO2 and Si2N2O, as well as a greater amount of continuity in the oxide scale, because these phases assist in closing the pores and lower the severity of cracking by exhibiting self-healing type behavior. For both the composites, the mass changes are found to be higher during cyclic exposure at 1300 °C by about 2 times compared to that under isothermal conditions.

Synthesis of nanostructured SiC using the pulsed laser deposition technique

International Nuclear Information System (INIS)

Zhang, H.X.; Feng, P.X.; Makarov, V.; Weiner, B.R.; Morell, G.

2009-01-01

We report the new results on the direct synthesis of nanostructured silicon carbide (SiC) materials using the pulsed laser deposition technique. Scanning electron microscopy images revealed that SiC nanoholes, nanosprouts, nanowires, and nanoneedles were obtained. The crystallographic structure, chemical composition, and bond structure of the nanoscale SiC materials were investigated using X-ray diffraction, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering spectroscopy. The transverse optical mode and longitudinal optical mode in Raman spectra were found to become sharper as the substrate temperature was increased, while the material structure evolved from amorphous to crystalline

Silicon Carbide Power Devices and Integrated Circuits

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan; Samsel, Isaak; LaBel, Ken; Chen, Yuan; Ikpe, Stanley; Wilcox, Ted; Phan, Anthony; Kim, Hak; Topper, Alyson

2017-01-01

An overview of the NASA NEPP Program Silicon Carbide Power Device subtask is given, including the current task roadmap, partnerships, and future plans. Included are the Agency-wide efforts to promote development of single-event effect hardened SiC power devices for space applications.

Microstructure and Mechanical Behaviour of Stir-Cast Al-Mg-Sl Alloy Matrix Hybrid Composite Reinforced with Corn Cob Ash and Silicon Carbide

Directory of Open Access Journals (Sweden)

Oluwagbenga Babajide Fatile

2014-10-01

Full Text Available In this present study, the microstructural and mechanical behaviour of Al-Mg-Si alloy matrix composites reinforced with silicon carbide (SiC and Corn cob ash (An agro‑waste was investigated. This research work was aimed at assessing the suitability of developing low cost- high performance Al-Mg-Si hybrid composite. Silicon carbide (SiC particulates added with 0,1,2,3 and 4 wt% Corn cob ash (CCA were utilized to prepare 10 wt% of the reinforcing phase with Al-Mg-Si alloy as matrix using two-step stir casting method. Microstructural characterization, density measurement, estimated percent porosity, tensile testing, and micro‑hardness measurement were used to characterize the composites produced. From the results obtained, CCA has great potential to serve as a complementing reinforcement for the development of low cost‑high performance aluminum hybrid composites.

Sintering of Si C by hot-pressing with addition of Al{sub 2}O{sub 3} and concentrate of rare earths; Sinterizacao por prensagem a quente com SiC com adicao de Al{sub 2}O{sub 3} e concentrado de terras raras

Energy Technology Data Exchange (ETDEWEB)

Hwang, M.K.; Silva, C.R.M. [Centro Tecnico Aeroespacial (CTA-IAE), Sao Jose dos Campos, SP (Brazil). Inst. de Atividades Espaciais]. E-mail: miriamk@iae.cta.br; Nono, M.C.A.; Vieira, R.A. [Instituto Nacional de Pesquisas Espaciais (INPE), Sao Jose dos Campos, SP (Brazil)

2004-07-01

Silicon carbide (SiC) has essentially covalent bonds ({approx}88%). The high covalency bond is responsible for the good mechanical properties, although it induces a low self diffusion coefficient, making densification more difficult. For a successful densification is necessary to apply pressure on the samples, and/or the addition of sintering additives, which improves the densification. In this SiC samples with alumina (Al2O3) and concentrate of rare earth (CRE) addition were sintered by hot pressing in argon atmospheric at 20 MPa of pressure, heating rate of 20 deg C/min up to 1800 deg C and a dwell time of 1 h. Initially the CRE was calcined at 1000 deg C during 1 h. After that, three mixtures were prepared with distinct concentrations in high energy mill and the samples were sintered. The aim of this work is to improve SiC densification by the liquid phase formation during sintering owing to the additives reactions between itself. The pressure intensify the driving force for densification, taking the liquid phase to drain easier through the grain boundaries, making possible best accommodation and rearrangement of the grains. The application of the pressure on the samples during sintering contributes to improve densification and becomes possible sintering in lower temperature than conventional one. The phases of the sintered samples were analyzed by X-ray diffraction and the morphology were verified by scanning electron microscopy. (author)

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

Energy Technology Data Exchange (ETDEWEB)

Czapski, M., E-mail: michal.czapski@cern.ch [CERN, Genève 23 CH-1211 (Switzerland); Stora, T. [CERN, Genève 23 CH-1211 (Switzerland); Tardivat, C.; Deville, S. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Santos Augusto, R. [CERN, Genève 23 CH-1211 (Switzerland); Leloup, J.; Bouville, F. [Lab. de Synthèse et Fonctionnalisation des Céramiques, CNRS/Saint-Gobain, Av. Jauffret 84306 Cavaillon (France); Fernandes Luis, R. [Univ. Técnica de Lisboa Estrada Nacional 10, 2686-953 Sacavem, Loures (Portugal)

2013-12-15

Highlights: • SiC and Al{sub 2}O{sub 3} of uniaxial porosity were produced with ice-templating method. • The method allows controlled pore formation within the material. • Calculation of mechanical integrity under irradiation with protons was performed. • Generated thermal stresses should not exceed material’s strength. -- Abstract: New silicon carbide (SiC) and aluminum oxide (Al{sub 2}O{sub 3}) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants.

Science.gov (United States)

Gryshkov, Oleksandr; Klyui, Nickolai I; Temchenko, Volodymyr P; Kyselov, Vitalii S; Chatterjee, Anamika; Belyaev, Alexander E; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

2016-11-01

Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO2) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. Copyright © 2016 Elsevier B.V. All rights reserved.

Contribution of x-ray topography and high-resolution diffraction to the study of defects in SiC

International Nuclear Information System (INIS)

Dudley, Michael; Huang Xianrong; Vetter, William M

2003-01-01

A short review is presented of the various synchrotron white beam x-ray topography (SWBXT) imaging techniques developed for characterization of silicon carbide (SiC) crystals and thin films. These techniques, including back-reflection topography, reticulography, transmission topography, and a set of section topography techniques, are demonstrated to be particularly powerful for imaging hollow-core screw dislocations (micropipes) and closed-core threading screw dislocations, as well as other defects, in SiC. The geometrical diffraction mechanism commonly underlying these imaging processes is emphasized for understanding the nature and origins of these defects. Also introduced is the application of SWBXT combined with high-resolution x-ray diffraction techniques to complete characterization of 3C/4H or 3C/6H SiC heterostructures, including polytype identification, 3C variant mapping, and accurate lattice mismatch measurements

Investigations of the ternary system beryllium-carbon-tungsten and analyses of beryllium on carbon surfaces

International Nuclear Information System (INIS)

Kost, Florian

2009-01-01

Beryllium, carbon and tungsten are planned to be used as first wall materials in the future fusion reactor ITER. The aim of this work is a characterization of mixed material formation induced by thermal load. To this end, model systems (layers) were prepared and investigated, which give insight into the basic physical and chemical concepts. Before investigating ternary systems, the first step was to analyze the binary systems Be/C and Be/W (bottom-up approach), where the differences between the substrates PG (pyrolytic graphite) and HOPG (highly oriented pyrolytic graphite) were of special interest. Particularly X-ray photoelectron spectroscopy (XPS), low energy ion scattering (ISS) and Rutherford backscattering spectroscopy (RBS) were used as analysis methods. Beryllium evaporated on carbon shows an island growth mode, whereas a closed layer can be assumed for layer thicknesses above 0.7 nm. Annealing of the Be/C system induces Be 2 C island formation for T≥770 K. At high temperatures (T≥1170 K), beryllium carbide dissociates, resulting in (metallic) beryllium desorption. For HOPG, carbide formation starts at higher temperatures compared to PG. Activation energies for the diffusion processes were determined by analyzing the decreasing beryllium amount versus annealing time. Surface morphologies were characterized using angle-resolved XPS (ARXPS) and atomic force microscopy (AFM). Experiments were performed to study processes in the Be/W system in the temperature range from 570 to 1270 K. Be 2 W formation starts at 670 K, a complete loss of Be 2 W is observed at 1170 K due to dissociation (and subsequent beryllium desorption). Regarding ternary systems, particularly Be/C/W and C/Be/W were investigated, attaching importance to layer thickness (reservoir) variations. At room temperature, Be 2 C, W 2 C, WC and Be 2 W formation at the respective interfaces was observed. Further Be 2 C is forming with increasing annealing temperatures. Depending on the layer

Structure and physical properties of ternary uranium transition-metal antimonides U3MSb5 (M = Zr, Hf, Nb)

International Nuclear Information System (INIS)

Tkachuk, Andriy V.; Muirhead, Craig P.T.; Mar, Arthur

2006-01-01

The ternary uranium transition-metal antimonides U 3 MSb 5 (M = Zr, Hf, Nb) were prepared by arc-melting reactions followed by annealing at 800 deg. C, or by use of a Sn flux. These compounds extend the previously known series U 3 MSb 5 (M = Ti, V, Cr, Mn) and RE 3 MSb 5 (RE = La, Ce, Pr, Nd, Sm; M = Ti, Zr, Hf, Nb). The crystal structures of U 3 MSb 5 were determined by single-crystal X-ray diffraction data (Pearson symbol hP18, hexagonal, space group P6 3 /mcm, Z = 2; U 3 ZrSb 5 , a = 9.2223(3) A, c = 6.1690(2) A; U 3 HfSb 5 , a = 9.2084(4) A, c = 6.1629(3) A; U 3 NbSb 5 , a = 9.1378(4) A, c 6.0909(6) A). U 3 TaSb 5 has also been identified in microcrystalline form (a = 9.233(3) A, c = 6.142(3) A). Four-probe electrical resistivity measurements on single crystals and dc magnetic susceptibility measurements on powders indicated prominent transitions that are attributed to ferromagnetic ordering. The Curie temperatures, T C , located from ac magnetic susceptibility curves, are 135 K for U 3 ZrSb 5 , 141 K for U 3 HfSb 5 , and 107 K for U 3 NbSb 5

Precision Surface Grinding of Silicon Carbide

Directory of Open Access Journals (Sweden)

Mohamed Konneh

2016-12-01

Full Text Available Silicon carbide (SiC is well known for its excellent material properties, high durability, high wear resistance, light weight and extreme hardness. Among the engineering applications of this material, it is an excellent candidate for optic mirrors used in an Airbone Laser (ABL device. However, the low fracture toughness and extreme brittleness characteristics of SiC are predominant factors for its poor machinability. This paper presents surface grinding of SiC using diamond cup wheels to assess the performance of diamond grits with respect to the roughness produced on the machined surfaces and also the morphology of the ground work-piece. Resin bonded diamond cup wheels of grit sizes 46 µm, 76 µm and 107 µm; depth of cut of 10 µm, 20 µm and 30 µm; and feed rate of 2 mm/min, 12 mm/min and 22 mm/min were used during this machining investigation. It has been observed that the 76 grit performs better in terms of low surface roughness value and morphology.

Fabrication and characterization of aluminium hybrid composites reinforced with fly ash and silicon carbide through powder metallurgy

Science.gov (United States)

Bilal Naim Shaikh, Mohd; Arif, Sajjad; Arif Siddiqui, M.

2018-04-01

This paper reports the fabrication and characterization of aluminium hybrid composites (AMCs) reinforced with commonly available and inexpensive fly ash (FA, 0, 5, 10 and 15 wt.%) particles along silicon carbide (SiC) using powder metallurgy process. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) were employed for microstructural characterization and phase identification respectively. Wear behaviour were investigated using pin-on-disc wear tester for the different combinations of wear parameters like load (10, 20 and 30 N), sliding speed (1.5, 2 and 2.5 m s‑1) and sliding distance (300, 600 and 900 m). SEM confirms the uniform distribution of FA and SiC in aluminium matrix. The hardness of Al/SiC/FA is increased by 20%–25% while wear rate decreased by 15%–40%. From wear analysis, sliding distance was the least significant parameter influencing the wear loss followed by applied load and sliding speed. To identify the mechanism of wear, worn out surface were also analysed by SEM.

Large area SiC coating technology of RBSC for semiconductor processing component

International Nuclear Information System (INIS)

Park, Ji Yeon; Kim, Weon Ju

2001-06-01

As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

Large area SiC coating technology of RBSC for semiconductor processing component

Energy Technology Data Exchange (ETDEWEB)

Park, Ji Yeon; Kim, Weon Ju

2001-06-01

As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

Visible-Light-Mediated Excited State Relaxation in Semi-Synthetic Genetic Alphabet: d5SICS and dNaM.

Science.gov (United States)

Bhattacharyya, Kalishankar; Datta, Ayan

2017-08-25

The excited state dynamics of an unnatural base pair (UBP) d5SICS/dNaM were investigated by accurate ab-initio calculations. Time-dependent density functional and high-level multireference calculations (MS-CASPT2) were performed to elucidate the excitation of this UBP and its excited state relaxation mechanism. After excitation to the bright state S 2 (ππ*), it decays to the S 1 state and then undergoes efficient intersystem crossing to the triplet manifold. The presence of sulfur atom in d5SICS leads to strong spin-orbit coupling (SOC) and a small energy gap that facilitates intersystem crossing from S 1 (n s π*) to T 2 (ππ*) followed by internal conversion to T 1 state. Similarly in dNaM, the deactivation pathway follows analogous trends. CASPT2 calculations suggest that the S 1 (ππ*) state is a dark state below the accessible S 2 (ππ*) bright state. During the ultrafast deactivation, it exhibits bond length inversion. From S 1 state, significant SOC leads the population transfer to T 3 due to a smaller energy gap. Henceforth, fast internal conversion occurs from T 3 to T 2 followed by T 1 . From time-dependent trajectory surface hopping dynamics, it is found that excited state relaxation occurs on a sub-picosecond timescale in d5SICS and dNaM. Our findings strongly suggest that there is enough energy available in triplet state of UBP to generate reactive oxygen species and induce phototoxicity with respect to cellular DNA. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microstructural, phase evolution and corrosion properties of silicon carbide reinforced pulse electrodeposited nickel-tungsten composite coatings

Science.gov (United States)

Singh, Swarnima; Sribalaji, M.; Wasekar, Nitin P.; Joshi, Srikant; Sundararajan, G.; Singh, Raghuvir; Keshri, Anup Kumar

2016-02-01

Silicon carbide (SiC) reinforced nickel-tungsten (Ni-W) coatings were successfully fabricated on steel substrate by pulse electrodeposition method (PED) and the amount of SiC was varied as 0 g/l, 2 g/l, and 5 g/l in Ni-W coating. Effect of subsequent addition of SiC on microstructures, phases and on corrosion property of the coating was investigated. Field emission scanning electron microscopy (FE-SEM) image of the surface morphology of the coating showed the transformation from the dome like structure to turtle shell like structure. X-ray diffraction (XRD) of Ni-W-5 g/l SiC showed the disappearance of (220) plane of Ni(W), peak splitting in major peak of Ni(W) and formation of distinct peak of W(Ni) solid solution. Absence of (220) plane, peak splitting and presence of W(Ni) solid solution was explained by the high resolution transmission electron microscopy (HR-TEM) images. Tafel polarization plot was used to study the corrosion property of the coatings in 0.5 M NaCl solution. Ni-W-5 g/l SiC coating was showed higher corrosion resistance (i.e. ∼21% increase in corrosion potential, Ecorr) compared to Ni-W coating. Two simultaneous phenomena have been identified for the enhanced corrosion resistance of Ni-W-5 g/l SiC coating. (a) Presence of crystallographic texture (b) formation of continuous double barrier layer of NiWO4 and SiO2.

Single-Event Effects in Silicon and Silicon Carbide Power Devices

Science.gov (United States)

Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

2014-01-01

NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic

International Nuclear Information System (INIS)

Reau, A.

2008-01-01

Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC f /SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC f /SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

Erosion behaviour of physically vapour-deposited and chemically vapour-deposited SiC films coated on molybdenum during oxygenated argon beam thinning

International Nuclear Information System (INIS)

Shikama, T.; Kitajima, M.; Fukutomi, M.; Okada, M.

1984-01-01

The erosion behaviour during bombardment with a 5 keV argon beam at room temperature was studied for silicon carbide (SiC) films of thickness of about 10 μm coated on molybdenum by physical vapour deposition (PVD) and chemical vapour deposition (CVD). The PVD SiC (plasma-assisted ion plating) exhibited a greater thinning rate than the CVD SiC film. Electron probe X-ray microanalysis revealed that the chemical composition of PVD SiC was changed to a composition enriched in silicon by the bombardment, and there was a notable change in its surface morphology. The CVD SiC retained its initial chemical composition with only a small change in its surface morphology. Auger electron spectroscopy indicated that silicon oxide was formed on the surface of PVD SiC by the bombardment. The greater thinning rate and easier change in chemical composition in PVD SiC could be attributed to its readier chemical reaction with oxygen due to its more non-uniform structure and weaker chemical bonding. Oxygen was present as one of the impurities in the argon beam. (Auth.)

CaO-Al2O3 glass-ceramic as a joining material for SiC based components: A microstructural study of the effect of Si-ion irradiation

Science.gov (United States)

Casalegno, Valentina; Kondo, Sosuke; Hinoki, Tatsuya; Salvo, Milena; Czyrska-Filemonowicz, Aleksandra; Moskalewicz, Tomasz; Katoh, Yutai; Ferraris, Monica

2018-04-01

The aim of this work was to investigate and discuss the microstructure and interface reaction of a calcia-alumina based glass-ceramic (CA) with SiC. CA has been used for several years as a glass-ceramic for pressure-less joining of SiC based components. In the present work, the crystalline phases in the CA glass-ceramic and at the CA/SiC interface were investigated and the absence of any detectable amorphous phase was assessed. In order to provide a better understanding of the effect of irradiation on the joining material and on the joints, Si ion irradiation was performed both on bulk CA and CA joined SiC. CA glass-ceramic and CA joined SiC were both irradiated with 5.1 MeV Si2+ ions to 3.3 × 1020 ions/m2 at temperatures of 400 and 800 °C at DuET facility, Kyoto University. This corresponds to a damage level of 5 dpa for SiC averaged over the damage range. This paper presents the results of a microstructural analysis of the irradiated samples as well as an evaluation of the dimensional stability of the CA glass-ceramic and its irradiation temperature and/or damage dependence.

Visible light emission from porous silicon carbide

DEFF Research Database (Denmark)

Ou, Haiyan; Lu, Weifang

2017-01-01

Light-emitting silicon carbide is emerging as an environment-friendly wavelength converter in the application of light-emitting diode based white light source for two main reasons. Firstly, SiC has very good thermal conductivity and therefore a good substrate for GaN growth in addition to the small...

Pulsed laser deposition of SiC thin films at medium substrate temperatures

International Nuclear Information System (INIS)

Katharria, Y.S.; Kumar, Sandeep; Choudhary, R.J.; Prakash, Ram; Singh, F.; Lalla, N.P.; Phase, D.M.; Kanjilal, D.

2008-01-01

Systematic studies of thin silicon carbide (SiC) films deposited on Si (100) substrates using pulsed laser deposition technique at room temperature, 370 deg. C and 480 deg. C are carried out. X-ray photoelectron spectroscopy showed the formation of SiC bonds in the films at these temperatures along with some graphitic carbon clusters. Fourier transform infrared analysis also confirmed the formation of SiC nanocrystallites in the films. Transmission electron microscopy and electron diffraction were used to study the structural properties of nanocrystallites formed in the films. Surface morphological analysis using atomic force microscopy revealed the growth of smooth films

Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

Energy Technology Data Exchange (ETDEWEB)

Gryshkov, Oleksandr, E-mail: gryshkov@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Klyui, Nickolai I., E-mail: klyuini@ukr.net [College of Physics, Jilin University, 130012 Changchun (China); V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Temchenko, Volodymyr P., E-mail: tvp@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Kyselov, Vitalii S., E-mail: kyselov@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Chatterjee, Anamika, E-mail: chatterjee@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Belyaev, Alexander E., E-mail: belyaev@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Lauterboeck, Lothar, E-mail: lauterboeck@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany); Iarmolenko, Dmytro, E-mail: iarmolenko.dmytro@isp.kiev.ua [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Science of Ukraine, 03028 Kyiv (Ukraine); Glasmacher, Birgit, E-mail: glasmacher@imp.uni-hannover.de [Institute for Multiphase Processes, Leibniz Universität Hannover, 30167 Hannover (Germany)

2016-11-01

Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO{sub 2}) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO{sub 2} using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO{sub 2} to the initial HA powder resulted in significant decomposition of the final HA/ZrO{sub 2} coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO{sub 2} coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of SiC

Porous biomorphic silicon carbide ceramics coated with hydroxyapatite as prospective materials for bone implants

International Nuclear Information System (INIS)

Gryshkov, Oleksandr; Klyui, Nickolai I.; Temchenko, Volodymyr P.; Kyselov, Vitalii S.; Chatterjee, Anamika; Belyaev, Alexander E.; Lauterboeck, Lothar; Iarmolenko, Dmytro; Glasmacher, Birgit

2016-01-01

Porous and cytocompatible silicon carbide (SiC) ceramics derived from wood precursors and coated with bioactive hydroxyapatite (HA) and HA-zirconium dioxide (HA/ZrO 2 ) composite are materials with promising application in engineering of bone implants due to their excellent mechanical and structural properties. Biomorphic SiC ceramics have been synthesized from wood (Hornbeam, Sapele, Tilia and Pear) using a forced impregnation method. The SiC ceramics have been coated with bioactive HA and HA/ZrO 2 using effective gas detonation deposition approach (GDD). The surface morphology and cytotoxicity of SiC ceramics as well as phase composition and crystallinity of deposited coatings were analyzed. It has been shown that the porosity and pore size of SiC ceramics depend on initial wood source. The XRD and FTIR studies revealed the preservation of crystal structure and phase composition of in the HA coating, while addition of ZrO 2 to the initial HA powder resulted in significant decomposition of the final HA/ZrO 2 coating and formation of other calcium phosphate phases. In turn, NIH 3T3 cells cultured in medium exposed to coated and uncoated SiC ceramics showed high re-cultivation efficiency as well as metabolic activity. The recultivation efficiency of cells was the highest for HA-coated ceramics, whereas HA/ZrO 2 coating improved the recultivation efficiency of cells as compared to uncoated SiC ceramics. The GDD method allowed generating homogeneous HA coatings with no change in calcium to phosphorus ratio. In summary, porous and cytocompatible bio-SiC ceramics with bioactive coatings show a great promise in construction of light, robust, inexpensive and patient-specific bone implants for clinical application. - Highlights: • Synthesis and characterization of porous biomorphic SiC ceramics derived from wood • Successful deposition of bioactive calcium phosphate coatings using gas detonation deposition • Porosity and pore size of SiC ceramics depend on wood

ToF-MEIS stopping measurements in thin SiC films

International Nuclear Information System (INIS)

Linnarsson, M.K.; Khartsev, S.; Primetzhofer, D.; Possnert, G.; Hallén, A.

2014-01-01

Electronic stopping in thin, amorphous, SiC films has been studied by time-of-flight medium energy ion scattering and conventional Rutherford backscattering spectrometry. Amorphous SiC films (8, 21 and 36 nm) were prepared by laser ablation using a single crystalline silicon carbide target. Two kinds of substrate films, one with a lower atomic mass (carbon) and one with higher atomic mass (iridium) compared to silicon has been used. Monte Carlo simulations have been used to evaluate electronic stopping from the shift in energy for the signal scattered from Ir with and without SiC. The two kinds of samples are used to illustrate the strength and challenges for ToF-MEIS compared to conventional RBS

SiC Nanoparticles Toughened-SiC/MoSi2-SiC Multilayer Functionally Graded Oxidation Protective Coating for Carbon Materials at High Temperatures

Science.gov (United States)

Abdollahi, Alireza; Ehsani, Naser; Valefi, Zia; Khalifesoltani, Ali

2017-05-01

A SiC nanoparticle toughened-SiC/MoSi2-SiC functionally graded oxidation protective coating on graphite was prepared by reactive melt infiltration (RMI) at 1773 and 1873 K under argon atmosphere. The phase composition and anti-oxidation behavior of the coatings were investigated. The results show that the coating was composed of MoSi2, α-SiC and β-SiC. By the variations of Gibbs free energy (calculated by HSC Chemistry 6.0 software), it could be suggested that the SiC coating formed at low temperatures by solution-reprecipitation mechanism and at high temperatures by gas-phase reactions and solution-reprecipitation mechanisms simultaneously. SiC nanoparticles could improve the oxidation resistance of SiC/MoSi2-SiC multiphase coating. Addition of SiC nanoparticles increases toughness of the coating and prevents spreading of the oxygen diffusion channels in the coating during the oxidation test. The mass loss and oxidation rate of the SiC nanoparticle toughened-SiC/MoSi2-SiC-coated sample after 10-h oxidation at 1773 K were only 1.76% and 0.32 × 10-2 g/cm3/h, respectively.

Vacancy-type defects in TiO2/SiO2/SiC dielectric stacks

Science.gov (United States)

Coleman, P. G.; Burrows, C. P.; Mahapatra, R.; Wright, N. G.

2007-07-01

Open-volume (vacancy-type) point defects have been observed in ˜80-nm-thick titanium dioxide films grown on silicon dioxide/4H silicon carbide substrates as stacks with high dielectric constant for power device applications, using variable-energy positron annihilation spectroscopy. The concentration of vacancies decreases as the titanium dioxide growth temperature is increased in the range from 700to1000°C, whereas grain boundaries form in the polycrystalline material at the highest growth temperatures. It is proposed that the optimal electrical performance for films grown at 800°C reflects a balance between decreasing vacancy concentration and increasing grain boundary formation. The concentration of vacancies at the silicon dioxide/silicon carbide interface appears to saturate after 2.5h oxidation at 1150°C. A supplementary result suggests that the quality of the 10-μm-thick deposited silicon carbide epilayer is compromised at depths of about 2μm and beyond, possibly by the migration of impurities and/or other defects from the standard-grade highly doped 4H silicon carbide wafer beneath the epilayer during oxidation.

Determining the fracture resistance of advanced SiC fiber reinforced SiC matrix composites

International Nuclear Information System (INIS)

Nozawa, T.; Katoh, Y.; Kishimoto, H.

2007-01-01

Full text of publication follows: One of the perceived advantages for highly-crystalline and stoichiometric silicon carbide (SiC) and SiC composites, e.g., advanced SiC fiber reinforced chemically-vapor-infiltrated (CVI) SiC matrix composites, is the retention of fast fracture properties after neutron irradiation at high-temperatures (∼1000 deg. C) to intermediate-doses (∼15 dpa). Accordingly, it has been clarified that the maximum allowable stress (or strain) limit seems unaffected in certain irradiation conditions. Meanwhile, understanding the mechanism of crack propagation from flaws, as potential weakest link to cause composite failure, is somehow lacking, despite that determining the strength criterion based on the fracture mechanics will eventually become important considering the nature of composites' fracture. This study aims to evaluate crack propagation behaviors of advanced SiC/SiC and to provide fundamentals on fracture resistance of the composites to define the strength limit for the practical component design. For those purposes, the effects of irreversible energies related to interfacial de-bonding, fiber bridging, and microcrack forming on the fracture resistance were evaluated. Two-dimensional SiC/SiC composites were fabricated by CVI or nano-infiltration and transient-eutectic-phase (NITE ) methods. Hi-Nicalon TM Type-S or Tyranno TM -SA fibers were used as reinforcements. In-plane mode-I fracture resistance was evaluated by the single edge notched bend technique. The key finding is the continuous Load increase with the crack growth for any types of advanced composites, while many studies specified the gradual load decrease for the conventional composites once the crack initiates. This high quasi-ductility appeared due primarily to high friction (>100 MPa) at the fiber/matrix interface using rough SiC fibers. The preliminary analysis based on the linear elastic fracture mechanics, which does not consider the effects of irreversible energy

Breakthrough in Power Electronics from SiC: May 25, 2004 - May 31, 2005

Energy Technology Data Exchange (ETDEWEB)

Marckx, D. A.

2006-03-01

This report explores the premise that silicon carbide (SiC) devices would reduce substantially the cost of energy of large wind turbines that need power electronics for variable speed generation systems.

Stopped Flow Kinetics of MnII Catalysed Periodate Oxidation of 2, 3- dimethylaniline - Evaluation of Stability Constant of the Ternary Intermediate Complex

Directory of Open Access Journals (Sweden)

Rajneesh Dutt Kaushik

2015-03-01

Full Text Available The formation of ternary intermediate unstable complex during the oxidation of aromatic amines by periodate ion catalysed by MnII has been proposed in case of some anilines. This paper is the first report on stopped-flow kinetic study and evaluation of stability constant of ternary complex forming in the MnII - catalysed periodate oxidation of 2, 3-dimethylaniline (D in acetone-water medium. Stop-flow spectrophotometric method was used to study the ternary complex formation and to determine its stability constant. The stop-flow trace shows the reaction to occur in two steps. The first step, which is presumably the formation of ternary complex, is relatively fast while the second stage is relatively quite slow. The stability constant evaluated for D - MnII - IO4- ternary complex by determining  equilibrium absorbance is (2.2 ± 1.0 × 105. Kinetics of ternary complex formation was defined by the rate law(A  under pseudo first order conditions. ln{[C2]eq / ( [C2]eq -[C2]} = kobs . t (A where, kobs is the pseudo first order rate constant, [C2] is concentration of ternary complex at given time t, and [C2]eq is the equilibrium concentration of ternary complex. © 2015 BCREC UNDIP. All rights reservedReceived: 3rd October 2014; Revised: 4th December 2014; Accepted: 15th December 2014How to Cite: Kaushik, R.D., Agarwal, R., Tyagi, P., Singh, O., Singh, J. (2015. Stopped Flow Kinetics of MnII Catalysed Periodate Oxidation of 2,3-dimethylaniline - Evaluation of Stability Constant of the Ternary Intermediate Complex. Bulletin of Chemical Reaction Engineering & Catalysis, 10 (1: 78-87. (doi:10.9767/bcrec.10.1.7621.78-87Permalink/DOI: http://dx.doi.org/10.9767/bcrec.10.1.7621.78-87

The ternary post-transition metal carbodiimide SrZn(NCN){sub 2}

Energy Technology Data Exchange (ETDEWEB)

Corkett, Alex J.; Konze, Philipp M. [Institute of Inorganic Chemistry, RWTH Aachen University, Aachen (Germany); Dronskowski, Richard [Institute of Inorganic Chemistry, RWTH Aachen University, Aachen (Germany); Juelich-Aachen Research Alliance (JARA-HPC), RWTH-Aachen University, Aachen (Germany)

2017-11-17

SrZn(NCN){sub 2}, the first example of a ternary post-transition metal carbodiimide, was prepared by a solid-state metathesis reaction. The crystal structure was solved from PXRD data and found to adopt the orthorhombic (Cmcm) BaZnSO structure, a high symmetry modification of that expressed by the oxide analogue SrZnO{sub 2}. Locally, SrZn(NCN){sub 2} features ZnN{sub 4} tetrahedra and SrN{sub 6} trigonal prisms similar to those in quarternary LiSr{sub 2}M(NCN){sub 4} (M = Al{sup 3+} and Ga{sup 3+}) phases, however, the overall topologies are distinct with single chains in the former and double chains in the latter. Electronic structure calculations indicate an indirect bandgap of about 2.95 eV in SrZn(NCN){sub 2}, slightly lower than the experimentally observed bandgap of 3.4 eV in SrZnO{sub 2} and consistent with a greater degree of covalency. The structural similarities between SrZn(NCN){sub 2} and oxychalcogenide analogues highlight the pseudochalcogenide character of NCN{sup 2-} and suggest that the title compound may serve as a template for accessing novel ternary carbodiimides featuring tetrahedrally coordinated transition metals. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effect of inclusion of SiC particulates on the mechanical resistance behaviour of stir-cast AA6063/SiC composites

International Nuclear Information System (INIS)

Balasubramanian, I.; Maheswaran, R.

2015-01-01

Highlights: • AA6063/SiC composites with different weight percent are stir cast. • Resistance properties against indentation, stretching force and sliding force are studied. • Increase in initiation of cleavage facets and reduces the tensile strength for 15% SiC. • Transition from micro ploughing to micro cutting wear mechanism is less due to SiC inclusion. - Abstract: This study investigates the mechanical resistance behaviour of AA6063 particulate composites with the inclusion of micron-sized silicon carbide (SiC) particles with different weight percentages in an AA6063 aluminium matrix. AA6063/SiC particulate composites containing 0, 5, 10, and 15 weight percent of SiC particles were produced by stir casting. Standard mechanical tests were conducted on the composite plates, and the mechanical resistance to indentation, tensile force and sliding force are evaluated. It has been observed that upon addition of SiC particles, the resistance against indentation is increased and the resistance against tensile force is initially increased and then decreased. Furthermore, using scanning electron microscopy (SEM), the fracture appearance of the broken specimen subjected to tensile force and morphological changes in the surface subjected to sliding force are analysed. The SEM images reveal that the addition of SiC particles in the AA6063 aluminium matrix initiates more cleavage facets. This leads to brittle fracture in the specimen subjected to tensile forces and less transition from material displacement to material removal in the specimen subjected to sliding forces

Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

Energy Technology Data Exchange (ETDEWEB)

Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2016-08-01

Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

Energy Technology Data Exchange (ETDEWEB)

Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

2013-06-01

We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

Covalently Attached Organic Monolayers onto Silicon Carbide from 1-Alkynes: Molecular Structure and Tribological Properties

NARCIS (Netherlands)

Pujari, S.P.; Scheres, L.M.W.; Weidner, T.; Baio, J.E.; Cohen Stuart, M.A.; Rijn, van C.J.M.; Zuilhof, H.

2013-01-01

In order to achieve improved tribological and wear properties at semiconductor interfaces, we have investigated the thermal grafting of both alkylated and fluorine-containing ((CxF2x+1)–(CH2)n-) 1-alkynes and 1-alkenes onto silicon carbide (SiC). The resulting monolayers display static water contact

X-ray powder diffraction analysis of liquid-phase-sintered silicon carbide ceramics

Energy Technology Data Exchange (ETDEWEB)

Ortiz, A.L.; Sanchez-Bajo, F. [Universidad de Extremadura, Badajoz (Spain). Dept. de Electronica e Ingenieria Electromecanica; Cumbrera, F.L. [Universidad de Extremadura, Badajoz (Spain). Dept. de Fisica

2002-07-01

In an attempt to gain a comprehensive understanding of the microstructural evolution in liquid-phase-sintered silicon carbide ceramics, the effect of the starting {beta}-SiC powder has been studied. Pellets of two different {beta}-SiC starting powders were sintered with simultaneous additions of Al{sub 2}O{sub 3} and Y{sub 2}O{sub 3} at 1950 C for 1 hour in flowing argon atmosphere. Here we have used X-ray diffraction to obtain the relative abundance of the resulting SiC polytypes after sintering. The significant influence of the defects concentration on the {beta} to {alpha} transformation rate has been determined using the Rietveld method. (orig.)

TRISO coated fuel particles with enhanced SiC properties

International Nuclear Information System (INIS)

Lopez-Honorato, E.; Tan, J.; Meadows, P.J.; Marsh, G.; Xiao, P.

2009-01-01

The silicon carbide (SiC) layer used for the formation of TRISO coated fuel particles is normally produced at 1500-1650 deg. C via fluidized bed chemical vapor deposition from methyltrichlorosilane in a hydrogen environment. In this work, we show the deposition of SiC coatings with uniform grain size throughout the coating thickness, as opposed to standard coatings which have larger grain sizes in the outer sections of the coating. Furthermore, the use of argon as the fluidizing gas and propylene as a carbon precursor, in addition to hydrogen and methyltrichlorosilane, allowed the deposition of stoichiometric SiC coatings with refined microstructure at 1400 and 1300 deg. C. The deposition of SiC at lower deposition temperatures was also advantageous since the reduced heat treatment was not detrimental to the properties of the inner pyrolytic carbon which generally occurs when SiC is deposited at 1500 deg. C. The use of a chemical vapor deposition coater with four spouts allowed the deposition of uniform and spherical coatings.

SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

Energy Technology Data Exchange (ETDEWEB)

DR. DENNIS NAGLE; DR. DAJIE ZHANG

2009-03-26

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm{sup -3} (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC

SILICON CARBIDE CERAMICS FOR COMPACT HEAT EXCHANGERS

International Nuclear Information System (INIS)

Nagle, Dennis; Zhang, Dajie

2009-01-01

Silicon carbide (SiC) materials are prime candidates for high temperature heat exchangers for next generation nuclear reactors due to their refractory nature and high thermal conductivity at elevated temperatures. This research has focused on demonstrating the potential of liquid silicon infiltration (LSI) for making SiC to achieve this goal. The major advantage of this method over other ceramic processing techniques is the enhanced capability of making high dense, high purity SiC materials in complex net shapes. For successful formation of net shape SiC using LSI techniques, the carbon preform reactivity and pore structure must be controlled to allow the complete infiltration of the porous carbon structure which allows complete conversion of the carbon to SiC. We have established a procedure for achieving desirable carbon properties by using carbon precursors consisting of two readily available high purity organic materials, crystalline cellulose and phenolic resin. Phenolic resin yields a glassy carbon with low chemical reactivity and porosity while the cellulose carbon is highly reactive and porous. By adjusting the ratio of these two materials in the precursor mixtures, the properties of the carbons produced can be controlled. We have identified the most favorable carbon precursor composition to be a cellulose resin mass ratio of 6:4 for LSI formation of SiC. The optimum reaction conditions are a temperature of 1800 C, a pressure of 0.5 Torr of argon, and a time of 120 minutes. The fully dense net shape SiC material produced has a density of 2.96 g cm -3 (about 92% of pure SiC) and a SiC volume fraction of over 0.82. Kinetics of the LSI SiC formation process was studied by optical microscopy and quantitative digital image analysis. This study identified six reaction stages and provided important understanding of the process. Although the thermal conductivity of pure SiC at elevated temperatures is very high, thermal conductivities of most commercial SiC

Designing the fiber volume ratio in SiC fiber-reinforced SiC ceramic composites under Hertzian stress

International Nuclear Information System (INIS)

Lee, Kee Sung; Jang, Kyung Soon; Park, Jae Hong; Kim, Tae Woo; Han, In Sub; Woo, Sang Kuk

2011-01-01

Highlights: → Optimum fiber volume ratios in the SiC/SiC composite layers were designed under Hertzian stress. → FEM analysis and spherical indentation experiments were undertaken. → Boron nitride-pyrocarbon double coatings on the SiC fiber were effective. → Fiber volume ratio should be designed against flexural stress. -- Abstract: Finite element method (FEM) analysis and experimental studies are undertaken on the design of the fiber volume ratio in silicon carbide (SiC) fiber-reinforced SiC composites under indentation contact stresses. Boron nitride (BN)/Pyrocarbon (PyC) are selected as the coating materials for the SiC fiber. Various SiC matrix/coating/fiber/coating/matrix structures are modeled by introducing a woven fiber layer in the SiC matrix. Especially, this study attempts to find the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics under Hertzian stress. The analysis is performed by changing the fiber type, fiber volume ratio, coating material, number of coating layers, and stacking sequence of the coating layers. The variation in the stress for composites in relation to the fiber volume ratio in the contact axial or radial direction is also analyzed. The same structures are fabricated experimentally by a hot process, and the mechanical behaviors regarding the load-displacement are evaluated using the Hertzian indentation method. Various SiC matrix/coating/fiber/coating/matrix structures are fabricated, and mechanical characterization is performed by changing the coating layer, according to the introduction (or omission) of the coating layer, and the number of woven fiber mats. The results show that the damage mode changes from Hertzian stress to flexural stress as the fiber volume ratio increases in composites because of the decreased matrix volume fraction, which intensifies the radial crack damage. The result significantly indicates that the optimum fiber volume ratio in SiC fiber-reinforced SiC ceramics should be designed for

Stability analysis of SiO2/SiC multilayer coatings

International Nuclear Information System (INIS)

Fu Zhiqiang; Jean-Charles, R.

2006-01-01

The stability behaviours of SiC coatings and SiO 2 /SiC coatings in helium with little impurities are studied by HSC Chemistry 4.1, the software for analysis of Chemical reaction and equilibrium in multi-component complex system. It is found that in helium with a low partial pressure of oxidative impurities under different total pressure, the key influence factor controlling T cp of SiC depends is the partial pressure of oxidative impurities; T cp of SiC increases with the partial pressure of oxidative impurities. In helium with a low partial pressure of different impurities, the key influence factor of T cs of SiO 2 are both the partial pressure of impurities and the amount of impurities for l mol SiO 2 ; T cs of SiO 2 increases with the partial pressure of oxidative impurities at the same amount of the impurities for 1 mol SiO 2 while it decreases with the amount of the impurities for 1 mm SiO 2 at the same partial pressure of the impurities. The influence of other impurities on T cp of SiC in He-O 2 is studied and it is found that CO 2 , H 2 O and N-2 increase T cp of SiC in He-O 2 while H 2 , CO and CH 4 decrease T cp of SiC He-O 2 . When there exist both oxidative impurities and reductive impurities, their effect on T cs of SiO 2 can be suppressed by the other. In HTR-10 operation atmosphere, SiO 2 /SiC coatings can keep stable status at higher temperature than SiC coatings, so SiO 2 /SiC coatings is more suitable to improve the oxidation resistance of graphite in HTR-10 operation atmosphere compared with SiC coatings. (authors)

Interaction of noble-metal fission products with pyrolytic silicon carbide

International Nuclear Information System (INIS)

Lauf, R.J.; Braski, D.N.

1982-01-01

Fuel particles for the High-Temperature Gas-Cooled Reactor (HTGR) contain layers of pyrolytic carbon and silicon carbide, which act as a miniature pressure vessel and form the primary fission product barrier. Of the many fission products formed during irradiation, the noble metals are of particular interest because they interact significantly with the SiC layer and their concentrations are somewhat higher in the low-enriched uranium fuels currently under consideration. To study fission product-SiC interactions, particles of UO 2 or UC 2 are doped with fission product elements before coating and are then held in a thermal gradient up to several thousand hours. Examination of the SiC coatings by TEM-AEM after annealing shows that silver behaves differently from the palladium group

Improved thermoelectric performance of CdO by adding SiC fibers versus by adding SiC nanoparticles inclusions

Science.gov (United States)

Liang, S.; Li, Longjiang

2018-03-01

We report the improved thermoelectric (TE) performance of CdO by alloying with SiC fibers. In contrast to the lowered thermoelectric figure of merit (ZT) in a CdO matrix with SiC nanoparticle composites, an appreciable ZT value increment of about 36% (from 0.32 to 0.435) at 1000 K was obtained in the CdO matrix with SiC fiber composites. Both kinds of composites show substantially decreased thermal conductivity due to additional phonon scattering by the nano-inclusions. Compared to the very high electrical resistivity (ρ ˜ 140 μΩ m) for 5 at. % SiC nanoparticle composites, SiC fiber composites favorably maintained a very low ρ (˜30 μΩ m) even with 5 at. % SiC at 1000 K. We think the substantial difference of specific surface areas of these two nano-inclusions (30 m2/g for fibers vs 300 m2/g for nanoparticles) might play a crucial role to fine tune the TE performance. Larger interface could be inductive to diffusion and electron acceptor activation, which affect carrier mobility considerably. This work might hint at an alternative approach to improve TE materials' performance.

Synergetic Effect of Graphene and MWCNTs on Microstructure and Mechanical Properties of Cu/Ti3SiC2/C Nanocomposites

Science.gov (United States)

Jiang, Xiaosong; Song, Tingfeng; Shao, Zhenyi; Liu, Wanxia; Zhu, Degui; Zhu, Minhao

2017-11-01

Multi-walled carbon nanotubes (MWCNTs) and graphenes have been taken for novel reinforcements due to their unique structure and performance. However, MWCNTs or graphenes reinforced copper matrix composites could not catch up with ideal value due to reinforcement dispersion in metal matrix, wettability to metal matrix, and composite material interface. Taking advantage of the superior properties of one-dimensional MWCNTs and two-dimensional graphenes, complementary performance and structure are constructed to create a high contact area between MWCNTs and graphenes to the Cu matrix. Mechanical alloying, hot pressing, and hot isostatic pressing techniques are used to fabricate Cu matrix self-lubricating nanocomposites. Effects of MWCNTs and graphenes on mechanical properties and microstructures of Cu/Ti3SiC2/C nanocomposites are studied. The fracture and strengthening mechanisms of Cu/Ti3SiC2/C nanocomposites are explored on the basis of structure and composition of Cu/Ti3SiC2/C nanocomposites with formation and function of interface.

Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing

International Nuclear Information System (INIS)

Zheng, Le; Shin, Sangho; Steve Kang, Sung-Mo

2014-01-01

A memristor-based ternary content addressable memory (mTCAM) is presented. Each mTCAM cell, consisting of five transistors and two memristors to store and search for ternary data, is capable of remarkable nonvolatility and higher storage density than conventional CMOS-based TCAMs. Each memristor in the cell can be programmed individually such that high impedance is always present between searchlines to reduce static energy consumption. A unique two-step write scheme offers reliable and energy-efficient write operations. The search voltage is designed to ensure optimum sensing margins with the presence of variations in memristor devices. Simulations of the proposed mTCAM demonstrate functionalities in write and search modes, as well as a search delay of 2 ns and a search of 0.99 fJ/bit/search for a word width of 128 bits. (paper)

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

Science.gov (United States)

Czapski, M.; Stora, T.; Tardivat, C.; Deville, S.; Santos Augusto, R.; Leloup, J.; Bouville, F.; Fernandes Luis, R.

2013-12-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLUKA codes.

Power monitoring in space nuclear reactors using silicon carbide radiation detectors

Science.gov (United States)

Ruddy, Frank H.; Patel, Jagdish U.; Williams, John G.

2005-01-01

Space reactor power monitors based on silicon carbide (SiC) semiconductor neutron detectors are proposed. Detection of fast leakage neutrons using SiC detectors in ex-core locations could be used to determine reactor power: Neutron fluxes, gamma-ray dose rates and ambient temperatures have been calculated as a function of distance from the reactor core, and the feasibility of power monitoring with SiC detectors has been evaluated at several ex-core locations. Arrays of SiC diodes can be configured to provide the required count rates to monitor reactor power from startup to full power Due to their resistance to temperature and the effects of neutron and gamma-ray exposure, SiC detectors can be expected to provide power monitoring information for the fill mission of a space reactor.

Ternary SnO2@PANI/rGO nanohybrids as excellent anode materials for lithium-ion batteries

International Nuclear Information System (INIS)

Ding, Hongmei; Jiang, Hao; Zhu, Zhengju; Hu, Yanjie; Gu, Feng; Li, Chunzhong

2015-01-01

Highlights: • A three-dimensional ternary SnO 2 @PANI/rGO nanohybrids has been synthesized via dip-coating method. • PANI acts as the conductive matrix as well as a good binding agent of SnO 2 nanoparticles and graphene sheets, greatly improving the electrochemical performance. • The nanohybtrids, when applied as LIBs,exhibit a high reversible specific capacity of 772 mA h g −1 at 100 mA g −1 with excellent rate capability and high cycling stability. - Abstract: A three-dimensional (3D) nanostructure composed of ternary polyaniline/SnO 2 /graphene (SnO 2 @PANI/rGO) nanohybrids were successfully developed and prepared as anode materials for lithium ion batteries (LIBs) by a simple dip-coating of SnO 2 @polyaniline (SnO 2 @PANI) and graphene dispersion on Cu foam. In such smart nanostructures, polyaniline (PANI) acts as the conductive matrix as well as a good binding agent of SnO 2 nanoparticles and graphene sheets, greatly improving the rate performance to a great extent. The as-prepared ternary nanohybrids exhibit a high reversible specific capacity of 772 mA h g −1 at 100 mA g −1 with excellent rate capability (268 mA h g −1 at 1000 mA g −1 ), more significantly, after 100 cycles at 100 mA g −1 , our ternary nanohybrids still maintain a high specific capacity of 749 mA h g −1 , which is much better than SnO 2 /rGO(458 mA h g −1 at 100 mA g −1 ), SnO 2 @PANI (480 mA h g −1 at 100 mA g −1 ) and pure SnO 2 nanoparticles (300 mA h g −1 at 100 mA g −1 ). Such intriguing electrochemical performance is mainly attributed to the strong synergistic effects among SnO 2 , polyaniline and graphene. It is reckoned that the present 3D SnO 2 @PANI/rGO nanohybrids can serve as a promising anode material for LIBs

Densification of silicon and zirconium carbides by a new process: spark plasma sintering

International Nuclear Information System (INIS)

Guillard, F.

2006-12-01

Materials research for suitable utilization in 4. generation nuclear plants needs new ways to densify testing components. Two carbides, silicon and zirconium carbide seems to be the most suitable choice due to their mechanical, thermal and neutron-transparency properties against next nuclear plant specifications. Nevertheless one main difficulty remains, which is densifying them even at high temperature. Spark Plasma Sintering a new metal-, ceramic- and composite-sintering process has been used to densify both SiC and ZrC. Understanding bases of mass transport mechanisms in SPS have been studied. Composites and interfaces have been processed and analyzed. This manuscript reports original results on SiC and ZrC ceramics sintered with commercial powder started, without additives. (author)

Low-Cost, Silicon Carbide Replication Technique for LWIR Mirror Fabrication, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — SSG proposes an innovative optical manufacturing approach that will enable the low-cost fabrication of lightweighted, Long Wave Infrared (LWIR) Silicon Carbide (SiC)...

PVD Silicon Carbide as a Thin Film Packaging Technology for Antennas on LCP Substrates for Harsh Environments

Science.gov (United States)

Scardelletti, Maximilian C.; Stanton, John W.; Ponchak, George E.; Jordan, Jennifer L.; Zorman, Christian A.

2010-01-01

This paper describes an effort to develop a thin film packaging technology for microfabricated planar antennas on polymeric substrates based on silicon carbide (SiC) films deposited by physical vapor deposition (PVD). The antennas are coplanar waveguide fed dual frequency folded slot antennas fabricated on liquid crystal polymer (LCP) substrates. The PVD SiC thin films were deposited directly onto the antennas by RF sputtering at room temperature at a chamber pressure of 30 mTorr and a power level of 300 W. The SiC film thickness is 450 nm. The return loss and radiation patterns were measured before and after the SiC-coated antennas were submerged into perchloric acid for 1 hour. No degradation in RF performance or physical integrity of the antenna was observed.

Creation of leak-proof silicon carbide diffusion barriers by means of pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Reinecke, A.-M.; Lustfeld, M.; Lippmann, W., E-mail: wolfgang.lippmann@tu-dresden.de; Hurtado, A.

2014-05-01

TRISO (tristructural isotropic) coated fuel particles are a crucial element of the HTR safety concept. While TRISO coated particles have been proven as a very efficient barrier for a large range of fission products in HTR experimental reactors, some particular fission products could still diffuse at a considerable rate. Most importantly, radioactive silver {sup 110m}Ag was found to be released from coated particles. In future HTRs with active components like a gas turbine in the primary circuit, such silver contamination may severely limit maintainability of these parts with the result of reduced life-time performance. So far, experimental analyses on silver diffusion through silicon carbide have led to contradictory results. In this work, an alternative method was used to generate silicon carbide layers as a basis for analysis of silver diffusion. With pulsed laser deposition (PLD), it is possible to generate coatings of different materials and various kinds of compounds. In particular, this technology allows the generation of layers very well defined with respect to their composition, purity and density. The microstructure can precisely be manipulated through various parameters. Based on different silicon carbide coatings with well-defined properties, we are going to investigate the silver diffusion process. Our goal is to derive the properties of an ideal silicon carbide coating preventing silver diffusion entirely. In this paper we present the major aspects of our work creating crystalline SiC layers as well as silver and CsI layers both on plane and spherical substrates. Analyses with X-ray diffraction, X-ray spectrometry and secondary ion mass spectrometry show that complex multilayer systems comprising a graphite substrate, a crystalline SiC layer and an intermediate silver layer were successfully created. Major challenges to approach in the future are the handling of high-level intrinsic stresses forming in the layer structure as well as the high vapour

SiC for microwave power transistors

Energy Technology Data Exchange (ETDEWEB)

Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

1997-07-16

The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

Estimate of toxically influence of silicon carbide nanoparticles according histopatologycal changes

Directory of Open Access Journals (Sweden)

Grozdanov Anita

2013-07-01

Full Text Available Taking in consideration a very wide application of nanoparticules in different industrial sectors due to their remarkable properties for implementation in different products, very important part for future development of nanotechology is following a histopatologycal changes provoke of this material.Silicon carbide (SiC as ceramic material with high thermal conductivity, high stability, good wear resistance and small thermal expansion coefficient is very applied in ceramic’s industry, power electronics, biomaterials, pharmaceutics etc. Histopathological changes of SiC particles were investigate on 4 weeks old female Wistar rats divided into four groups (two control and two experimental groups, sacrificed 2, 7 and 14 days after treatment. Histopathological diagnosis was performed on heart, liver, spleen, kidneys, lung, brain, gastrointestinal tract, using standard Hematoxilin-eosin staining methods. The main toxicological influences of SiC were observed on liver, lungs and gastrointestinal tract.

Thermodynamic modelling of phase equilibrium in system Ti-B-Si-C, synthesis and phases composition of borides and carbides layers on titanic alloyVT-1 at electron beam treatment in vacuum

Science.gov (United States)

Smirnyagina, N. N.; Khaltanova, V. M.; Lapina, A. E.; Dasheev, D. E.

2017-01-01

Composite layers on the basis of carbides and borides the titan and silicon on titanic alloy VT-1 are generated at diffused saturation in vacuum. Formation in a composite of MAX phase Ti3SiC2 is shown. Thermodynamic research of phase equilibrium in systems Ti-Si-C and Ti-B-C in the conditions of high vacuum is executed. The thermodynamics, formation mechanisms of superfirm layers borides and carbides of the titan and silicon are investigated.

PECVD silicon carbide surface micromachining technology and selected MEMS applications

NARCIS (Netherlands)

Rajaraman, V.; Pakula, L.S.; Yang, H.; French, P.J.; Sarro, P.M.

2011-01-01

Attractive material properties of plasma enhanced chemical vapour deposited (PECVD) silicon carbide (SiC) when combined with CMOS-compatible low thermal budget processing provides an ideal technology platform for developing various microelectromechanical systems (MEMS) devices and merging them with

STATUS OF HIGH FLUX ISOTOPE REACTOR IRRADIATION OF SILICON CARBIDE/SILICON CARBIDE JOINTS

Energy Technology Data Exchange (ETDEWEB)

Katoh, Yutai [ORNL; Koyanagi, Takaaki [ORNL; Kiggans, Jim [ORNL; Cetiner, Nesrin [ORNL; McDuffee, Joel [ORNL

2014-09-01

Development of silicon carbide (SiC) joints that retain adequate structural and functional properties in the anticipated service conditions is a critical milestone toward establishment of advanced SiC composite technology for the accident-tolerant light water reactor (LWR) fuels and core structures. Neutron irradiation is among the most critical factors that define the harsh service condition of LWR fuel during the normal operation. The overarching goal of the present joining and irradiation studies is to establish technologies for joining SiC-based materials for use as the LWR fuel cladding. The purpose of this work is to fabricate SiC joint specimens, characterize those joints in an unirradiated condition, and prepare rabbit capsules for neutron irradiation study on the fabricated specimens in the High Flux Isotope Reactor (HFIR). Torsional shear test specimens of chemically vapor-deposited SiC were prepared by seven different joining methods either at Oak Ridge National Laboratory or by industrial partners. The joint test specimens were characterized for shear strength and microstructures in an unirradiated condition. Rabbit irradiation capsules were designed and fabricated for neutron irradiation of these joint specimens at an LWR-relevant temperature. These rabbit capsules, already started irradiation in HFIR, are scheduled to complete irradiation to an LWR-relevant dose level in early 2015.

Study of the pseudo-ternary Ag2SAs2S3HgI2 vitreous system

Science.gov (United States)

Boidin, R.; Le Coq, D.; Cuisset, A.; Hindle, F.; Brubach, J.-B.; Michel, K.; Bychkov, E.

2013-03-01

Chalcogenide alloys in the Ag2SAs2S3HgI2 pseudo-ternary system were synthesized and their vitreous nature was verified by X-ray diffraction. The glass transition and crystallization temperatures (Tg and Tc), the density (d), and the total electrical conductivity (σ) were measured for all samples of three series, A, B, and C corresponding to (Ag2S)50-x/2(As2S3)50-x/2(HgI2)x, (Ag2S)y(As2S3)80-y(HgI2)20 and (Ag2S)z(As2S3)50(HgI2)50-z, respectively. The maximum of Tg was approximately 160 °C for glasses with low HgI2 content whereas the maximum of density (5.75 g cm-3) was obtained for the sample in the B-series with the highest Ag2S concentration (z=60 mol%). This composition also possesses the highest conductivity at 298 K (σ298 K≈10-3 S cm-1). Unexpectedly the conductivity of the A-series samples was observed to decrease as a function of the Ag2S content. The far-infrared transmission in the 100-600 cm-1 window range (3.3-18.2 THz, 100-16.6 μm) was also given for a few glass compositions highlighting the strong influence of the HgI2 content.

In situ martensitic transformation in a ternary MgO-Y/sub 2/O/sub 3/-ZrO/sub 2/ alloy: II, transformation in tetragonal ZrO/sub 2/ precipitates

International Nuclear Information System (INIS)

Lee, R.R.; Heuer, A.H.

1988-01-01

The stress-induced martensitic transformation of t-ZrO/sub 2/ precipitates in a ternary MgO-Y/sub 2/O/sub 3/-ZrO/sub 2/ alloy has been studied in situ in the transmission electron microscope. The transformation occurs autocatalytically and takes place by piecewise growth of two twin-related m-ZrO/sub 2/ variants. Unloading causes retransformation of partially transformed precipitates, but this reverse (m → t) transformation of fully transformed precipitates only occurs on heating. The martensitic transformation in this system is clearly thermoeleastic

Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

DEFF Research Database (Denmark)

Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

2016-01-01

The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Naderi, N., E-mail: naderi.phd@gmail.com [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Hashim, M.R. [Nano-Optoelectronics Research Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2013-03-05

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Porous-shaped silicon carbide ultraviolet photodetectors on porous silicon substrates

International Nuclear Information System (INIS)

Naderi, N.; Hashim, M.R.

2013-01-01

Highlights: ► Porous-shaped silicon carbide thin film was deposited on porous silicon substrate. ► Thermal annealing was followed to enhance the physical properties of samples. ► Metal–semiconductor-metal ultraviolet detectors were fabricated on samples. ► The effect of annealing temperature on electrical performance of devices was studied. ► The efficiency of photodetectors was enhanced by annealing at elevated temperatures. -- Abstract: A metal–semiconductor-metal (MSM) ultraviolet photodetector was fabricated based on a porous-shaped structure of silicon carbide (SiC). For increasing the surface roughness of SiC and hence enhancing the light absorption effect in fabricated devices, porous silicon (PS) was chosen as a template; SiC was deposited on PS substrates via radio frequency magnetron sputtering. Therefore, the deposited layers followed the structural pattern of PS skeleton and formed a porous-shaped SiC layer on PS substrate. The structural properties of samples showed that the as-deposited SiC was amorphous. Thus, a post-deposition annealing process with elevated temperatures was required to convert its amorphous phase to crystalline phase. The morphology of the sputtered samples was examined via scanning electron and atomic force microscopies. The grain size and roughness of the deposited layers clearly increased upon an increase in the annealing temperature. The optical properties of sputtered SiC were enhanced due to applying high temperatures. The most intense photoluminescence peak was observed for the sample with 1200 °C of annealing temperature. For the metallization of the SiC substrates to fabricate MSM photodetectors, two interdigitated Schottky contacts of Ni with four fingers for each electrode were deposited onto all the porous substrates. The optoelectronic characteristics of MSM UV photodetectors with porous-shaped SiC substrates were studied in the dark and under UV illumination. The electrical characteristics of fabricated

Temperature Induced Voltage Offset Drifts in Silicon Carbide Pressure Sensors

Science.gov (United States)

Okojie, Robert S.; Lukco, Dorothy; Nguyen, Vu; Savrun, Ender

2012-01-01

We report the reduction of transient drifts in the zero pressure offset voltage in silicon carbide (SiC) pressure sensors when operating at 600 C. The previously observed maximum drift of +/- 10 mV of the reference offset voltage at 600 C was reduced to within +/- 5 mV. The offset voltage drifts and bridge resistance changes over time at test temperature are explained in terms of the microstructure and phase changes occurring within the contact metallization, as analyzed by Auger electron spectroscopy and field emission scanning electron microscopy. The results have helped to identify the upper temperature reliable operational limit of this particular metallization scheme to be 605 C.

Construction of g-C3N4/CeO2/ZnO ternary photocatalysts with enhanced photocatalytic performance

Science.gov (United States)

Yuan, Yuan; Huang, Gui-Fang; Hu, Wang-Yu; Xiong, Dan-Ni; Zhou, Bing-Xin; Chang, Shengli; Huang, Wei-Qing

2017-07-01

Promoting the spatial separation of photoexcited charge carriers is of paramount significance for photocatalysis. In this work, binary g-C3N4/CeO2 nanosheets are first prepared by pyrolysis and subsequent exfoliation method, then decorated with ZnO nanoparticles to construct g-C3N4/CeO2/ZnO ternary nanocomposites with multi-heterointerfaces. Notably, the type-II staggered band alignments existing between any two of the constituents, as well as the efficient three-level transfer of electron-holes in unique g-C3N4/CeO2/ZnO ternary composites, leads to the robust separation of photoexcited charge carriers, as verified by its photocurrent increased by 8 times under visible light irradiation. The resulting g-C3N4/CeO2/ZnO ternary nanocomposites unveil appreciably increased photocatalytic activity, faster than that of pure g-C3N4, ZnO and g-C3N4/CeO2 by a factor of 11, 4.6 and 3.7, respectively, and good stability toward methylene blue (MB) degradation. The remarkably enhanced photocatalytic activity of g-C3N4/CeO2/ZnO ternary heterostructures can be interpreted in terms of lots of active sites of nanosheet shapes and the efficient charge separation owing to the resulting type-II band alignment with more than one heterointerface and the efficient three-level electron-hole transfer. A plausible mechanism is also elucidated via active species trapping experiments with various scavengers, which indicating that the photogenerated holes and •OH radicals play a crucial role in photodegradation reaction under visible light irradiation. This work suggest that the rational design and construction of type II multi-heterostructures is powerful for developing highly efficient and reusable visible-light photocatalysts for environmental purification and energy conversion.

Multi-quantum spin resonances of intrinsic defects in silicon carbide

International Nuclear Information System (INIS)

Georgy Astakhov

2014-01-01

We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

The development of SiC whisker fabrication technology for nuclear applications

International Nuclear Information System (INIS)

Kang, Thae Khapp; Kuk, Il Hiun; Lee, Jae Chun; Rhee, Chang Kyu; Lee, Ho Jin; Park, Soon Dong

1990-02-01

Important process factors of carbothermic process for the growth of SiC whiskers were investigated. The crystalline form of silicon dioxide, amount of carbon addition, graphite, silicon, catalysts, additive and reaction temperature were chosen as the main factors. Morphology of the resultant products was grouped into 3 different types; whisker,noodle and power types. The addition of catalyst affected in most the formation of SiC whiskers. Effects of catalyst and additive additions and reaction atmospheres on the morphology anf growth of SiC whiskers were investigated, silicon monoxide power and carbon monoxide gas were used as the raw materials. The addition of an iron containing catalyst resulted in a very long thread-like growth of the whiskers, while that of sodium chloride helical curlings. Addition of hydrogen to the non-oxidizing atmosphere enhanced the whisker formations. Crystallization of amorphous silicon monoxide raw powder was investigated at high temperatures up to 1500 deg C in Ar atmosphere using graphite crucible. Up to 900 deg C no crystallization occurred, while at 1100 - 1300 deg C silicon formation, and at 1500 deg C silicon dioxide and silicon carbide formations were detected. A slight weight loss began 1300 deg C, and the weight loss became about 33 % at 1500 deg C. After the formation reaction of SiC whiskers, the reaction products were leached by hydrofluoric acids. The optimum concentration of the hydrofluoric acid was 2 %. (author)

Characterization of SiC based composite materials by the infiltration of ultra-fine SiC particles

International Nuclear Information System (INIS)

Lee, J.K.; Lee, S.P.; Byun, J.H.

2010-01-01

The fabrication route of SiC materials by the complex compound of ultra-fine SiC particles and oxide additive materials has been investigated. Especially, the effect of additive composition ratio on the characterization of SiC materials has been examined. The characterization of C/SiC composites reinforced with plain woven carbon fabrics was also investigated. The fiber preform for C/SiC composites was prepared by the infiltration of complex mixture into the carbon fabric structure. SiC based composite materials were fabricated by a pressure assisted liquid phase sintering process. SiC materials possessed a good density higher than about 3.0 Mg/m 3 , accompanying the creation of secondary phase by the chemical reaction of additive materials. C/SiC composites also represented a dense morphology in the intra-fiber bundle region, even if this material had a sintered density lower than that of monolithic SiC materials. The flexural strength of SiC materials was greatly affected by the composition ratio of additive materials.

Development on UO3-K2O and MoO3-K2O binary systems and study of UO2MoO4-MoO3 domain within UO3-MoO3-K2O ternary system

International Nuclear Information System (INIS)

Dion, C.; Noel, A.

1983-01-01

This paper confirms the previous study on the MoO 3 -K 2 O system, and constitutes a clarity of the UO 3 -K 2 O system. Four distinct uranates VI with alkaline metal/uranium ratio's 2, 1, 0,5 and 0,285 exist. Preparation conditions and powder diffraction spectra of these compounds are given. Additional informations relative to K 2 MoO 4 allotropic transformations are provided. Study of UO 2 MoO 4 -K 2 MoO 4 diagram has brought three new phases into prominence: (B) K 6 UMo 4 O 18 incongruently melting point, (E) K 2 UMo 2 O 10 congruently melting and (F) K 2 U 3 Mo 4 O 22 incongruently melting point. Within MoO 3 -K 2 MoO 4 -UO 2 MoO 4 ternary system, no new phase is found. The general appearance of ternary liquidus and crystallization fields of several compounds are given. These three new compounds become identified with these of UO 2 MoO 4 -Na 2 MoO 4 binary system [fr

Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

Directory of Open Access Journals (Sweden)

Dan Zhu

2014-03-01

Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Influence of Heat Treatment on Content of the Carbide Phases in the Microstructure of High-Speed Steel

Directory of Open Access Journals (Sweden)

Jaworski J.

2017-09-01

Full Text Available This article presents the results of investigations of the effect of heat treatment temperature on the content of the carbide phase of HS3-1-2 and HS6-5-2 low-alloy high-speed steel. Analysis of the phase composition of carbides is carried out using the diffraction method. It is determined that with increasing austenitising temperature, the intensification of dissolution of M6C carbide increases. As a result, an increase in the grain size of the austenite and the amount of retained austenite causes a significant reduction in the hardness of hardened steel HS3-1-2 to be observed. The results of diffraction investigations showed that M7C3 carbides containing mainly Cr and Fe carbides and M6C carbides containing mainly Mo and W carbides are dissolved during austenitisation. During austenitisation of HS3-1-2 steel, the silicon is transferred from the matrix to carbides, thus replacing carbide-forming elements. An increase in a degree of tempering leads to intensification of carbide separation and this process reduce the grindability of tested steels.

Advanced Measurements of Silicon Carbide Ceramic Matrix Composites

Energy Technology Data Exchange (ETDEWEB)

Farhad Farzbod; Stephen J. Reese; Zilong Hua; Marat Khafizov; David H. Hurley

2012-08-01

Silicon carbide (SiC) is being considered as a fuel cladding material for accident tolerant fuel under the Light Water Reactor Sustainability (LWRS) Program sponsored by the Nuclear Energy Division of the Department of Energy. Silicon carbide has many potential advantages over traditional zirconium based cladding systems. These include high melting point, low susceptibility to corrosion, and low degradation of mechanical properties under neutron irradiation. In addition, ceramic matrix composites (CMCs) made from SiC have high mechanical toughness enabling these materials to withstand thermal and mechanical shock loading. However, many of the fundamental mechanical and thermal properties of SiC CMCs depend strongly on the fabrication process. As a result, extrapolating current materials science databases for these materials to nuclear applications is not possible. The “Advanced Measurements” work package under the LWRS fuels pathway is tasked with the development of measurement techniques that can characterize fundamental thermal and mechanical properties of SiC CMCs. An emphasis is being placed on development of characterization tools that can used for examination of fresh as well as irradiated samples. The work discuss in this report can be divided into two broad categories. The first involves the development of laser ultrasonic techniques to measure the elastic and yield properties and the second involves the development of laser-based techniques to measurement thermal transport properties. Emphasis has been placed on understanding the anisotropic and heterogeneous nature of SiC CMCs in regards to thermal and mechanical properties. The material properties characterized within this work package will be used as validation of advanced materials physics models of SiC CMCs developed under the LWRS fuels pathway. In addition, it is envisioned that similar measurement techniques can be used to provide process control and quality assurance as well as measurement of

Sintering of nano crystalline o silicon carbide doping with

Indian Academy of Sciences (India)

Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by ...

Shear stiffness in nanolaminar Ti3SiC2 challenges ab initio calculations

International Nuclear Information System (INIS)

Kisi, E H; Zhang, J F; Kirstein, O; Riley, D P; Styles, M J; Paradowska, A M

2010-01-01

Nanolaminates such as the M n+1 AX n (MAX) phases are a material class with ab initio derived elasticity tensors published for over 250 compounds. We have for the first time experimentally determined the full elasticity tensor of the archetype MAX phase, Ti 3 SiC 2 , using polycrystalline samples and in situ neutron diffraction. The experimental elastic constants show extreme shear stiffness, with c 44 more than five times greater than expected for an isotropic material. Such shear stiffness is quite rare in hexagonal materials and strongly contradicts the predictions of all published MAX phase elastic constants derived from ab initio calculations. It is concluded that second order properties such as elastic moduli derived from ab initio calculations require careful experimental verification. The diffraction technique used currently provides the only method of verification for the elasticity tensor for the majority of new materials where single crystals are not available. (fast track communication)

Dependence of Fracture Toughness on Crystallographic Orientation in Single-Crystalline Cubic (β) Silicon Carbide

Energy Technology Data Exchange (ETDEWEB)

Pharr, M.; Katoh, Y.; Bei, H.

2006-01-01

Along with other desirable properties, the ability of silicon carbide (SiC) to retain high strength after elevated temperature exposures to neutron irradiation renders it potentially applicable in fusion and advanced fission reactors. However, properties of the material such as room temperature fracture toughness must be thoroughly characterized prior to such practical applications. The objective of this work is to investigate the dependence of fracture toughness on crystallographic orientation for single-crystalline β-SiC. X-ray diffraction was first performed on the samples to determine the orientation of the crystal. Nanoindentation was used to determine a hardness of 39.1 and 35.2 GPa and elastic modulus of 474 and 446 GPa for the single-crystalline and polycrystalline samples, respectively. Additionally, crack lengths and indentation diagonals were measured via a Vickers micro-hardness indenter under a load of 100 gf for different crystallographic orientations with indentation diagonals aligned along fundamental cleavage planes. Upon examination of propagation direction of cracks, the cracks usually did not initiate and propagate from the corners of the indentation where the stresses are concentrated but instead from the indentation sides. Such cracks clearly moved along the {1 1 0} family of planes (previously determined to be preferred cleavage plane), demonstrating that the fracture toughness of SiC is comparatively so much lower along this set of planes that the lower energy required to cleave along this plane overpowers the stress-concentration at indentation corners. Additionally, fracture toughness in the <1 1 0> direction was 1.84 MPa·m1/2, lower than the 3.46 MPa·m1/2 measured for polycrystalline SiC (which can serve as an average of a spectrum of orientations), further demonstrating that single-crystalline β-SiC has a strong fracture toughness anisotropy.

Preparation of silicon carbide nanowires via a rapid heating process

International Nuclear Information System (INIS)

Li Xintong; Chen Xiaohong; Song Huaihe

2011-01-01

Silicon carbide (SiC) nanowires were fabricated in a large quantity by a rapid heating carbothermal reduction of a novel resorcinol-formaldehyde (RF)/SiO 2 hybrid aerogel in this study. SiC nanowires were grown at 1500 deg. C for 2 h in an argon atmosphere without any catalyst via vapor-solid (V-S) process. The β-SiC nanowires were characterized by field-emission scanning electron microscope (FE-SEM), X-ray diffraction (XRD), transmission electron microscope (TEM), high-resolution transmission electron microscope (HRTEM) equipped with energy dispersive X-ray (EDX) facility, Fourier transformed infrared spectroscopy (FTIR), and thermogravimetric analysis (TGA). The analysis results show that the aspect ratio of the SiC nanowires via the rapid heating process is much larger than that of the sample produced via gradual heating process. The SiC nanowires are single crystalline β-SiC phase with diameters of about 20-80 nm and lengths of about several tens of micrometers, growing along the [1 1 1] direction with a fringe spacing of 0.25 nm. The role of the interpenetrating network of RF/SiO 2 hybrid aerogel in the carbothermal reduction was discussed and the possible growth mechanism of the nanowires is analyzed.

Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Optical Physics Company (OPC) proposes to manufacture new silicon carbide (SiC) foam-based optics that are composite, athermal and lightweight (FOCAL) that provide...

Identification of {2 anti 1 anti 10} and {10 anti 10} Laue patterns of hexagonal and rhombohedral silicon carbide polytypes

International Nuclear Information System (INIS)

Yoganathan, M.; Suttrop, W.; Devaty, R.P.; Choyke, W.J.

1994-01-01

The development of epitaxic and bulk-grown semiconductor SiC exhibiting uniform polytype phase homogeneity is critically dependent upon the accurate identification of crystallographic orientations corresponding to the desired polytype. In this paper, experimental transmission Laue photographs as well as computer-generated transmission Laue patterns are presented for {2 anti 1 anti 10} and {10 anti 10} faces of the 4H, 6H and 15R polytypes of silicon carbide. The transmission patterns permit easy recognition of polytypes and crystal orientations. (orig.)

Direct Detection of Unnatural DNA Nucleotides dNaM and d5SICS using the MspA Nanopore.

Directory of Open Access Journals (Sweden)

Jonathan M Craig

Full Text Available Malyshev et al. showed that the four-letter genetic code within a living organism could be expanded to include the unnatural DNA bases dNaM and d5SICS. However, verification and detection of these unnatural bases in DNA requires new sequencing techniques. Here we provide proof of concept detection of dNaM and d5SICS in DNA oligomers via nanopore sequencing using the nanopore MspA. We find that both phi29 DNA polymerase and Hel308 helicase are capable of controlling the motion of DNA containing dNaM and d5SICS through the pore and that single reads are sufficient to detect the presence and location of dNaM and d5SICS within single molecules.

Mechanical characterization of SiC particulate & E-glass fiber reinforced Al 3003 hybrid metal matrix composites

Science.gov (United States)

Narayana, K. S. Lakshmi; Shivanand, H. K.

2018-04-01

Metal matrix composites constitute a class of low cost high quality materials which offer high performance for various industrial applications. The orientation of this research is towards the study of mechanical properties of as cast silicon carbide (SiC) particulates and Short E-Glass fibers reinforced Aluminum matrix composites (AMCs). The Hybrid metal matrix composite is developed by reinforcing SiC particulates of 100 microns and short E-Glass fibers of 2-3 mm length with Al 3003 in different compositions. The vortex method of stir casting was employed, in which the reinforcements were introduced into the vortex created by the molten metal by means of mechanical stirrer. The mechanical properties of the prepared metal matrix composites were analyzed. From the studies it was noticed that an improvement in mechanical properties of the reinforced alloys compared to unreinforced alloys.

Ternary system of Na2MoO4-Cs2MoO4-MoO3

International Nuclear Information System (INIS)

Zueva, V.P.; Shabanova, A.N.; Drobasheva, T.I.

1982-01-01

Using the methods of thermal analysis interaction of components in ternary system Na 2 MoO 4 -Cs 2 MoO 4 -MoO 3 has been studied. Crystallization surface consists of nine fields belonging to initial components and compounds of lateral sides. Triangulation of the system is carried out and the character of nonvariant points is clarified, the temperature of 360 deg C corresponds to low-melting eutectics

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

International Nuclear Information System (INIS)

Khamsuwan, J.; Intarasiri, S.; Kirkby, K.; Chu, P.K.; Singkarat, S.; Yu, L.D.

2012-01-01

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 10 13 and 1 × 10 14 ions/cm 2 at elevated temperatures for annealing. X-ray diffraction, Raman scattering, infrared spectroscopy and transmission electron microscopy were used to characterize the formation of nanocrystalline SiC. Photoluminescence was measured from the samples. The results demonstrated that MeV-heavy-ion-beam annealing could indeed induce crystallization of SiC nanocrystals and enhance emission of photoluminescence with violet bands dominance due to the quantum confinement effect.

He and Be ternary spontaneous fission of sup 2 sup 5 sup 2 Cf

CERN Document Server

Hwang, J K; Ramayya, A V; Hamilton, J H

2002-01-01

Ternary and binary fission studies of sup 2 sup 5 sup 2 Cf have been carried out by using the Gammasphere detector array with light charged particle (LCD) detectors. The relative sup 4 He and sup 5 He ternary fission yields were determined. The kinetic energies of the sup 5 He and sup 4 He ternary particles were found to be approximately 11 and 16 MeV, respectively. The sup 5 He particles contribute 10-20 % to the total observed alpha ternary yield. The data indicate that in nuclei with octupole deformations the population for the negative parity bands might be enhanced in the alpha ternary fission. >From LCP-gamma double gated spectra, neutron multiplicity distributions for alpha ternary fission pairs were measured. The average neutron multiplicity decreases about 0.7 AMU in going from the binary to alpha ternary fission in the approximately same mass splittings (104-146). From the analysis of the gamma-gamma matrix gated on the sup 1 sup 0 Be particles, the two fragment pairs of sup 1 sup 3 sup 8 Xe - sup 1...

Silicon Carbide Lightweight Optics With Hybrid Skins for Large Cryo Telescopes, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — Optical Physics Company (OPC) has developed new silicon carbide (SiC) foam-based optics with hybrid skins that are composite, athermal and lightweight (FOCAL) that...

Effect of oxygen on the processes of ion beam synthesis of buried SiC layers in silicon

International Nuclear Information System (INIS)

Artamonov, V.V.; Valakh, M.Ya.; Klyuj, N.I.; Mel'nik, V.P.; Romanyuk, A.B.; Romanyuk, B.N.; Yukhimchuk, V.A.

1998-01-01

The properties of Si-structures with buried silicon carbide (SiC) layers created by high dose carbon implantation into Cz-Si or Fz-Si wafers followed by high-temperature annealing were studied by Raman and infrared spectroscopy. Effect of additional oxygen implantation on the peculiarities of SiC layer formation was also studied. It was shown that under the same implantation and post-implantation annealing conditions the buried SiC layers are more effectively formed in Cz-Si or in Si subjected to additional oxygen implantation. Thus, oxygen in silicon promotes the SiC layer formation due to SiO x precipitate creation and accommodation of the crystal volume in the region where SiC phase is formed

D-region ion-neutral coupled chemistry (Sodankylä Ion Chemistry, SIC) within the Whole Atmosphere Community Climate Model (WACCM 4) - WACCM-SIC and WACCM-rSIC

Science.gov (United States)

Kovács, Tamás; Plane, John M. C.; Feng, Wuhu; Nagy, Tibor; Chipperfield, Martyn P.; Verronen, Pekka T.; Andersson, Monika E.; Newnham, David A.; Clilverd, Mark A.; Marsh, Daniel R.

2016-09-01

This study presents a new ion-neutral chemical model coupled into the Whole Atmosphere Community Climate Model (WACCM). The ionospheric D-region (altitudes ˜ 50-90 km) chemistry is based on the Sodankylä Ion Chemistry (SIC) model, a one-dimensional model containing 307 ion-neutral and ion recombination, 16 photodissociation and 7 photoionization reactions of neutral species, positive and negative ions, and electrons. The SIC mechanism was reduced using the simulation error minimization connectivity method (SEM-CM) to produce a reaction scheme of 181 ion-molecule reactions of 181 ion-molecule reactions of 27 positive and 18 negative ions. This scheme describes the concentration profiles at altitudes between 20 km and 120 km of a set of major neutral species (HNO3, O3, H2O2, NO, NO2, HO2, OH, N2O5) and ions (O2+, O4+, NO+, NO+(H2O), O2+(H2O), H+(H2O), H+(H2O)2, H+(H2O)3, H+(H2O)4, O3-, NO2-, O-, O2, OH-, O2-(H2O), O2-(H2O)2, O4-, CO3-, CO3-(H2O), CO4-, HCO3-, NO2-, NO3-, NO3-(H2O), NO3-(H2O)2, NO3-(HNO3), NO3-(HNO3)2, Cl-, ClO-), which agree with the full SIC mechanism within a 5 % tolerance. Four 3-D model simulations were then performed, using the impact of the January 2005 solar proton event (SPE) on D-region HOx and NOx chemistry as a test case of four different model versions: the standard WACCM (no negative ions and a very limited set of positive ions); WACCM-SIC (standard WACCM with the full SIC chemistry of positive and negative ions); WACCM-D (standard WACCM with a heuristic reduction of the SIC chemistry, recently used to examine HNO3 formation following an SPE); and WACCM-rSIC (standard WACCM with a reduction of SIC chemistry using the SEM-CM method). The standard WACCM misses the HNO3 enhancement during the SPE, while the full and reduced model versions predict significant NOx, HOx and HNO3 enhancements in the mesosphere during solar proton events. The SEM-CM reduction also identifies the important ion-molecule reactions that affect the partitioning of

Crystal Growth and Characterization of MT2Si2 Ternary Intermetallics (M = U, RE and T = 3d, 4d, 5d Transition Metals)

NARCIS (Netherlands)

Menovsky, A.A.; Moleman, A.C.; Snel, G.E.; Gortenmulder, T.J.; Palstra, T.T.M.

1986-01-01

Bulk single crystals of the ternary intermetallic compounds UT2Si2 (T = Ni, Pd, Pt and Ru), LaT2Si2 (T = Pd and Rh) and LuPd2Si2 have been grown from the melt with a modified “tri-arc” Czochralski method. The as-grown crystals were characterized by X-ray, microprobe and chemical analyses. The

DECODING THE MESSAGE FROM METEORITIC STARDUST SILICON CARBIDE GRAINS

International Nuclear Information System (INIS)

Lewis, Karen M.; Lugaro, Maria; Gibson, Brad K.; Pilkington, Kate

2013-01-01

Micron-sized stardust grains that originated in ancient stars are recovered from meteorites and analyzed using high-resolution mass spectrometry. The most widely studied type of stardust is silicon carbide (SiC). Thousands of these grains have been analyzed with high precision for their Si isotopic composition. Here we show that the distribution of the Si isotopic composition of the vast majority of stardust SiC grains carries the imprints of a spread in the age-metallicity distribution of their parent stars and of a power-law increase of the relative formation efficiency of SiC dust with the metallicity. This result offers a solution for the long-standing problem of silicon in stardust SiC grains, confirms the necessity of coupling chemistry and dynamics in simulations of the chemical evolution of our Galaxy, and constrains the modeling of dust condensation in stellar winds as a function of the metallicity.

Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

Energy Technology Data Exchange (ETDEWEB)

Pallon, J., E-mail: jan.pallon@nuclear.lu.se [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden); Syväjärvi, M. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Wang, Q. [Sensor System, ACREO Swedish ICT AB, Box 1070, SE-164 25 Kista (Sweden); Yakimova, R.; Iakimov, T. [Linköping University, Department of Physics, Chemistry and Biology, SE-58183 Linköping (Sweden); Graphensic AB, Teknikringen 1F, SE-58330 Linköping (Sweden); Elfman, M.; Kristiansson, P.; Nilsson, E.J.C.; Ros, L. [Division of Nuclear Physics, Physics Department, Lund University, Box 118, SE-221 00 Lund (Sweden)

2016-03-15

Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

Quantitative analysis of crystalline and remaining glass phases in CaO-B2O3-SiO2 ternary system glass ceramics

International Nuclear Information System (INIS)

He Ming; Wu Mengqiang; Zhang Shuren; Zhou Xiaohua; Zhang Ting; Chen Song

2010-01-01

Research highlights: → As for CBS ternary system glass ceramics, due to the complex phase compositions, many methods could be difficult to determine quantitatively the absolute amounts of crystalline and remaining oxides. In this study, an available method based on the Rietveld method was used to quantitatively analyze the relative weight fraction and densities of crystalline phases. These above data are used to obtain a table of both relative weight fraction of crystalline phases and densities of all phases including CBS LTCC. Using volume additivity rule, it is possible to analysis quantitatively the absolute weight fraction of crystalline phases and also the oxides molar content in the remaining glass. - Abstract: Based on Rietveld method of X-ray techniques and volume additivity rule, a new method was developed to quantitatively analyze the phase composition of CaO-B 2 O 3 -SiO 2 ternary system glass ceramics. Lattice parameters, densities and relative weight fractions of crystalline phases in CaO-B 2 O 3 -SiO 2 ternary system were obtained by X-ray diffraction (XRD) refinement. According to the relative weight fraction of crystalline phases and densities of various components, the volume additivity rule was revealed by calculating the absolute weight fraction of crystalline phases of CaO-B 2 O 3 -SiO 2 glass ceramics. In addition, molar contents of the oxides in the remaining glass can also be determined by this method. Comparing this method with internal standard method, it is found that the maximum deviations of the crystallinity and the absolute weight fraction of crystalline phases are less than 2.6% and 2.9%, respectively. As a result, quantitative evaluation of CaO-B 2 O 3 -SiO 2 ternary system glass ceramics can be achieved using this method.

On the sintering behaviour of steel bonded TiC-Cr3C2 and TiC-Cr3C2-WC mixed carbides

International Nuclear Information System (INIS)

Stojanov, L.G.; Exner, H.E.

1978-01-01

Powder mixtures of TiC+Cr 3 C 2 and TiC+Cr 3 C 2 + WC were hot pressed to nearly full density. The lattice parameter of the resulting cubic mixed crystal decreases linearly with increasing additions of Cr 3 C 2 and (Cr 3 C 2 +WC 1:1). Microhardness increases with Cr 3 C 2 content up to 20 wt.%. By addition of WC, microhardness is increased further and reaches a maximum value of approx. 38 000 MN/m 2 for 20 wt.% Cr 3 C 2 and 20 wt.% WC. From these solid solutions powder compositions of Ferro-TiC type were produced by milling with 55 wt.% Fe and 0.4 wt.% C. The sintering behaviour of these powders was studied in a vacuum dilatometer. The pronounced increase of shrinkage by Cr 3 C 2 and higher amounts of Cr 3 C 2 +WC dissolved in TiC previous to binder phase melting is attributed to the increased solubility of the carbide in solid iron. Presintering at 700 0 C in hydrogen has a negative influence on sintering activity and requires much higher temperatures for complete densification during subsequent vacuum sintering. (orig.) [de

Effect of silicon carbide addition on the corrosion behavior of powder metallurgy Cu−30Zn brass in a 3.5 wt% NaCl solution

Energy Technology Data Exchange (ETDEWEB)

Almomani, Mohammed Ali, E-mail: maalmomani7@just.edu.jo [Department of Industrial Engineering, Jordan University of Science and Technology, P. O. Box 3030, Irbid 22110 (Jordan); Tyfour, Wa' il Radwan, E-mail: wrtyfou@just.edu.jo [Department of Industrial Engineering, Jordan University of Science and Technology, P. O. Box 3030, Irbid 22110 (Jordan); Nemrat, Mohammed Hani, E-mail: mohammednemrat@yahoo.com [Department of Mechanical Engineering, Institute of Applied Technology, Abu Dhabi (United Arab Emirates)

2016-09-15

A study was made to evaluate the corrosion behavior when Cu−30Zn alloy is reinforced with different weight fractions of silicon carbide (SiC) particles in a simulated sea solution (3.5 wt% NaCl aqueous solution). The composites were produced via powder metallurgy (PM) route. For the sake of comparison, the corrosion behaviors of unreinforced and reinforced alloy were examined. Electrochemical measurements (potentiodynamic testing) showed that the corrosion rate of the composites decreased with increase of SiC weight percentages, as a result of weak microgalvanic couple between reinforcement particles and Cu−30Zn matrix, and the low possibility of intermetallic phases formation. ANOVA test indicated that the variations of corrosion rate of the composites upon changing weight percentages of SiC particles are statistically significant. Polarization curves showed that the passive film tends to be less stable, and the potential difference between passivation and free corrosion points increased with increase of SiC weight percentages, as SiC cathodically protect the matrix material by sacrificial anodic dissolution of crevice regions about reinforcement particles. Scanning Electron Microscope (SEM) images of the sample's surfaces before and after testing are in agreement with the electrochemical results. - Highlights: • Effect of adding SiC on both uniform and localized corrosion of Cu−30Zn alloy is studied. • Reinforcing Cu−30Zn with nonconductive SiC particles decreases its tendency to uniform and localized corrosion. • Reinforcement particles cathodically protect the matrix material, and retard pit propagation to the matrix.

Scanning and transmission electron microscopy study of the microstructural changes occurring in aluminium matrix composites reinforced with SiC particles during casting and welding: interface reactions

Science.gov (United States)

Urena; Gomez De Salazar JM; Gil; Escalera; Baldonedo

1999-11-01

Processing of aluminium matrix composites (AMCs), especially those constituted by a reactive system such as Al-SiC, presents great difficulties which limit their potential applications. The interface reactivity between SiC and molten Al generates an aluminium carbide which degrades the composite properties. Scanning and transmission electron microscopes equipped with energy-dispersive X-ray spectroscopes are essential tools for determining the structure and chemistry of the Al-SiC interfaces in AMCs and changes occurring during casting and arc welding. In the present work, an aluminium-copper alloy (AA2014) reinforced with three different percentages of SiC particles was subjected to controlled remelting tests, at temperatures in the range 750-900 degrees C for 10 and 30 min. Arc welding tests using a tungsten intert gas with power inputs in the range 850-2000 W were also carried out. The results of these studies showed that during remelting there is preferential SiC particle consumption with formation of Al4C3 by interface reaction between the solid SiC particle and the molten aluminium matrix. The formation of Al4C3 by the same mechanism has also been detected in molten pools of arc welded composites. However, in this case there was formation of an almost continuous layer of Al4C3, which protects the particle against further consumption, and formation of aciculate aluminium carbide on the top weld. Both are formed by fusion and dissolution of the SiC in molten aluminium followed by reaction and precipitation of the Al4C3 during cooling.

High Quality, Low-Scatter SiC Optics Suitable for Space-based UV & EUV Applications, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — SSG Precision Optronics proposes the development and demonstration of a new optical fabrication process for the production of EUV quality Silicon Carbide (SiC)...

Silicon carbide detectors for diagnostics of ion emission from laser plasmas

International Nuclear Information System (INIS)

Musumeci, Paolo; Zimbone, Massimo; Calcagno, Lucia; Cutroneo, Maria; Torrisi, Lorenzo; Velyhan, Andry

2014-01-01

Silicon carbide (SiC) detectors have been employed to analyze the multi-MeV ions generated from laser plasma. The irradiation was performed with the iodine laser of Prague Asterix Laser System Laboratory operating at 10 16  W cm −2 pulse intensity. Thin metallic and polymeric targets were irradiated and the produced plasmas were monitored in the forward direction. The use of SiC detectors ensures the cutting of the visible and soft UV radiation emitted from plasma, enhancing the sensitivity to protons and very fast heavy ions. The time-of-flight spectra obtained by irradiating polymeric films with high laser pulse energy produce protons with energy in the range 1.0–2.5 MeV and all the charge states of carbon ions. The metallic Al target allows achieving energy up to 3.0 MeV for protons and 40 MeV for Al ions. All the results reveal the high performances of these detectors in terms of resolution and response time. (paper)

Porous silicon carbide and aluminum oxide with unidirectional open porosity as model target materials for radioisotope beam production

CERN Document Server

Czapski, M; Tardivat, C; Stora, T; Bouville, F; Leloup, J; Luis, R Fernandes; Augusto, R Santos

2013-01-01

New silicon carbide (SiC) and aluminum oxide (Al2O3) of a tailor-made microstructure were produced using the ice-templating technique, which permits controlled pore formation conditions within the material. These prototypes will serve to verify aging of the new advanced target materials under irradiation with proton beams. Before this, the evaluation of their mechanical integrity was made based on the energy deposition spectra produced by FLORA codes. (C) 2013 Elsevier B.V. All rights reserved.