Exploring the Room-Temperature Ferromagnetism and Temperature-Dependent Dielectric Properties of Sr/Ni-Doped LaFeO3 Nanoparticles Synthesized by Reverse Micelle Method

Science.gov (United States)

Naseem, Swaleha; Khan, Shakeel; Husain, Shahid; Khan, Wasi

2018-03-01

This paper reports the thermal, microstructural, dielectric and magnetic properties of La0.75Sr0.25Fe0.65Ni0.35O3 nanoparticles (NPs) synthesized via reverse micelle technique. The thermogravimetric analysis of as-prepared NPs confirmed a good thermal stability of the sample. Powder x-ray diffraction data analyzed with a Rietveld refinement technique revealed single-phase and orthorhombic distorted perovskite crystal structure of the NPs having Pbnm space group. The transmission electron microscopy images show the crystalline nature and formation of nanostructures with a fairly uniform distribution of particles throughout the sample. Temperature-dependent dielectric properties of the NPs in accordance with the Kramers-Kronig transformation (KKT) model, universal dielectric response model and jump relaxation model have been discussed. Electrode or interface polarization is likely the cause of the observed dielectric behavior. Due to grain boundaries and Schottky barriers of the metallic electrodes of semiconductors, the depletion region is observed, which gives rise to Maxwell-Wagner relaxation and hence high dielectric constants. Magnetic studies revealed the ferromagnetic nature of the prepared NPs upon Sr and Ni doping in LaFeO3 perovskite at room temperature. Therefore, these NPs could be a potential candidate as electrode material in solid oxide fuel cells.

On the room temperature multiferroic BiFeO3: magnetic, dielectric and thermal properties

Science.gov (United States)

Lu, J.; Günther, A.; Schrettle, F.; Mayr, F.; Krohns, S.; Lunkenheimer, P.; Pimenov, A.; Travkin, V. D.; Mukhin, A. A.; Loidl, A.

2010-06-01

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at mm-wavelengths, as well as ferroelectric polarization are reported for single crystalline BiFeO3. A well developed anomaly in the magnetic susceptibility signals the onset of antiferromagnetic order close to 635 K. Beside this anomaly no further indications of phase or glass transitions are indicated in the magnetic dc and ac susceptibilities down to the lowest temperatures. The heat capacity has been measured from 2 K up to room temperature and significant contributions from magnon excitations have been detected. From the low-temperature heat capacity an anisotropy gap of the magnon modes of the order of 6 meV has been determined. The dielectric constants measured in standard two-point configuration are dominated by Maxwell-Wagner like effects for temperatures T > 300 K and frequencies below 1 MHz. At lower temperatures the temperature dependence of the dielectric constant and loss reveals no anomalies outside the experimental errors, indicating neither phase transitions nor strong spin phonon coupling. The temperature dependence of the dielectric constant was measured contact free at microwave frequencies. At room temperature the dielectric constant has an intrinsic value of 53. The loss is substantial and strongly frequency dependent indicating the predominance of hopping conductivity. Finally, in small thin samples we were able to measure the ferroelectric polarization between 10 and 200 K. The saturation polarization is of the order of 40 μC/cm2, comparable to reports in literature.

Temperature dependent dielectric relaxation and ac-conductivity of alkali niobate ceramics studied by impedance spectroscopy

Science.gov (United States)

Yadav, Abhinav; Mantry, Snigdha Paramita; Fahad, Mohd.; Sarun, P. M.

2018-05-01

Sodium niobate (NaNbO3) ceramics is prepared by conventional solid state reaction method at sintering temperature 1150 °C for 4 h. The structural information of the material has been investigated by X-ray diffraction (XRD) and Field emission scanning electron microscopy (FE-SEM). The XRD analysis of NaNbO3 ceramics shows an orthorhombic structure. The FE-SEM micrograph of NaNbO3 ceramics exhibit grains with grain sizes ranging between 1 μm to 5 μm. The surface coverage and average grain size of NaNbO3 ceramics are found to be 97.6 % and 2.5 μm, respectively. Frequency dependent electrical properties of NaNbO3 is investigated from room temperature to 500 °C in wide frequency range (100 Hz-5 MHz). Dielectric constant, ac-conductivity, impedance, modulus and Nyquist analysis are performed. The observed dielectric constant (1 kHz) at transition temperature (400 °C) are 975. From conductivity analysis, the estimated activation energy of NaNbO3 ceramics is 0.58 eV at 10 kHz. The result of Nyquist plot shows that the electrical behavior of NaNbO3 ceramics is contributed by grain and grain boundary responses. The impedance and modulus spectrum asserts that the negative temperature coefficient of resistance (NTCR) behavior and non-Debye type relaxation in NaNbO3.

Automated general temperature correction method for dielectric soil moisture sensors

Science.gov (United States)

Kapilaratne, R. G. C. Jeewantinie; Lu, Minjiao

2017-08-01

An effective temperature correction method for dielectric sensors is important to ensure the accuracy of soil water content (SWC) measurements of local to regional-scale soil moisture monitoring networks. These networks are extensively using highly temperature sensitive dielectric sensors due to their low cost, ease of use and less power consumption. Yet there is no general temperature correction method for dielectric sensors, instead sensor or site dependent correction algorithms are employed. Such methods become ineffective at soil moisture monitoring networks with different sensor setups and those that cover diverse climatic conditions and soil types. This study attempted to develop a general temperature correction method for dielectric sensors which can be commonly used regardless of the differences in sensor type, climatic conditions and soil type without rainfall data. In this work an automated general temperature correction method was developed by adopting previously developed temperature correction algorithms using time domain reflectometry (TDR) measurements to ThetaProbe ML2X, Stevens Hydra probe II and Decagon Devices EC-TM sensor measurements. The rainy day effects removal procedure from SWC data was automated by incorporating a statistical inference technique with temperature correction algorithms. The temperature correction method was evaluated using 34 stations from the International Soil Moisture Monitoring Network and another nine stations from a local soil moisture monitoring network in Mongolia. Soil moisture monitoring networks used in this study cover four major climates and six major soil types. Results indicated that the automated temperature correction algorithms developed in this study can eliminate temperature effects from dielectric sensor measurements successfully even without on-site rainfall data. Furthermore, it has been found that actual daily average of SWC has been changed due to temperature effects of dielectric sensors with a

Microscopic theoretical study of frequency dependent dielectric constant of heavy fermion systems

Science.gov (United States)

Shadangi, Keshab Chandra; Rout, G. C.

2017-05-01

The dielectric polarization and the dielectric constant plays a vital role in the deciding the properties of the Heavy Fermion Systems. In the present communication we consider the periodic Anderson's Model which consists of conduction electron kinetic energy, localized f-electron kinetic energy and the hybridization between the conduction and localized electrons, besides the Coulomb correlation energy. We calculate dielectric polarization which involves two particle Green's functions which are calculated by using Zubarev's Green's function technique. Using the equations of motion of the fermion electron operators. Finally, the temperature and frequency dependent dielectric constant is calculated from the dielectric polarization function. The charge susceptibility and dielectric constant are computed numerically for different physical parameters like the position (Ef) of the f-electron level with respect to fermi level, the strength of the hybridization (V) between the conduction and localized f-electrons, Coulomb correlation potential temperature and optical phonon wave vector (q). The results will be discussed in a reference to the experimental observations of the dielectric constants.

Evaluation of high temperature capacitor dielectrics

Science.gov (United States)

Hammoud, Ahmad N.; Myers, Ira T.

1992-01-01

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

Science.gov (United States)

Bai, Gang; Liu, Zhiguo; Xie, Qiyun; Guo, Yanyan; Li, Wei; Yan, Xiaobing

2015-09-01

A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC) and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba0.67Sr0.33TiO3 above Tc similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

The flexoelectric effect associated size dependent pyroelectricity in solid dielectrics

Energy Technology Data Exchange (ETDEWEB)

Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun; Guo, Yanyan; Li, Wei [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Yan, Xiaobing [College of Electronic and information Engineering, Hebei University, Baoding 071002 (China)

2015-09-15

A phenomenological thermodynamic theory is used to investigate the effect of strain gradient on the pyroelectric effect in centrosymmetric dielectric solids. Direct pyroelectricity can exist as external mechanical stress is applied to non-pyroelectric dielectrics with shapes such as truncated pyramids, due to elastic strain gradient induced flexoelectric polarization. Effective pyroelectric coefficient was analyzed in truncated pyramids. It is found to be controlled by size, ambient temperature, stress, and aspect ratio and depends mainly on temperature sensitivity of flexoelectric coefficient (TSFC) and strain gradient of the truncated pyramids dielectric solids. These results show that the pyroelectric property of Ba{sub 0.67}Sr{sub 0.33}TiO{sub 3} above T{sub c} similar to PZT and other lead-based ferroelectrics can be obtained. This feature might widely broaden the selection of materials for infrared detectors with preferable properties.

Preparation and temperature dependence of electrostriction properties for PMN-based composite ceramics

International Nuclear Information System (INIS)

Zhao Jingbo; Qu Shaobo; Du Hongliang; Zheng Yanju; Xu Zhuo

2009-01-01

Both low- and high-temperature units were prepared by columbite precursor method, and Pb(Mg 1/3 Nb 2/3 )O 3 (PMN)-based ferroelectric composite ceramics were prepared by conventional method, baking-block method and coating method, respectively. The effects of preparation methods on dielectric and electrostriction properties as well as the temperature-dependence property of the obtained composite ceramics were studied. The results show that compared with the samples prepared by traditional blend sintering method, of the samples prepared by baking-block and coating methods have much better dielectric and electrostriction properties. For those prepared by baking-block method, the electrostriction temperature-dependence properties are good in the range of 20-60 deg. C. For those prepared by coating method, the dielectric temperature-dependence properties are also good in the broad range of -30 to 70 deg. C, and the electrostriction temperature properties are better than those prepared by blending-block. Compared with the traditional blending sintering method, the dielectric and electrostriction temperature-dependence properties are much better, which effectively solves the problem of temperature properties existing in present engineering applications.

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

High temperature dielectric relaxation anomaly of Y3+ and Mn2+ doped barium strontium titanate ceramics

International Nuclear Information System (INIS)

Yan, Shiguang; Mao, Chaoliang; Wang, Genshui; Yao, Chunhua; Cao, Fei; Dong, Xianlin

2014-01-01

Relaxation like dielectric anomaly is observed in Y 3+ and Mn 2+ doped barium strontium titanate ceramics when the temperature is over 450 K. Apart from the conventional dielectric relaxation analysis method with Debye or modified Debye equations, which is hard to give exact temperature dependence of the relaxation process, dielectric response in the form of complex impedance, assisted with Cole-Cole impedance model corrected equivalent circuits, is adopted to solve this problem and chase the polarization mechanism in this paper. Through this method, an excellent description to temperature dependence of the dielectric relaxation anomaly and its dominated factors are achieved. Further analysis reveals that the exponential decay of the Cole distribution parameter n with temperature is confirmed to be induced by the microscopic lattice distortion due to ions doping and the interaction between the defects. At last, a clear sight to polarization mechanism containing both the intrinsic dipolar polarization and extrinsic distributed oxygen vacancies hopping response under different temperature is obtained.

Analysis of microwave heating of materials with temperature-dependent properties

International Nuclear Information System (INIS)

Ayappa, K.G.; Davis, H.T.; Davis, E.A.; Gordon, J.

1991-01-01

In this paper transient temperature profiles in multilayer slabs are predicted, by simultaneously solving Maxwell's equations with the heat conduction equation, using Galerkin-finite elements. It is assumed that the medium is homogeneous and has temperature-dependent dielectric and thermal properties. The method is illustrated with applications involving the heating of food and polymers with microwaves. The temperature dependence of dielectric properties affects the heating appreciably, as is shown by comparison with a constant property model

Effect of paramagnetic manganese ions doping on frequency and high temperature dependence dielectric response of layered Na1.9Li0.1Ti3O7 ceramics

International Nuclear Information System (INIS)

Pal, Dharmendra; Pandey, J.L.

2010-01-01

The manganese doped layered ceramic samples (Na 1.9 Li 0.1 )Ti 3 O 7 : XMn (0.01 ≤ X ≤ 0.1) have been prepared using high temperature solid state reaction. The room temperature electron paramagnetic resonance (EPR) investigations exhibit that at lower percentage of doping the substitution of manganese ions occur as Mn 3+ at Ti 4+ sites, whereas for higher percentage of doping Mn 2+ ions occupy the two different interlayer sodium/lithium sites. In both cases, the charge compensation mechanism should operate to maintain the overall charge neutrality of the lattice. The manganese doped derivatives of layered Na 1.9 Li 0. 1Ti 3 O 7 (SLT) ceramics have been investigated through frequency dependence dielectric spectroscopy in this work. The results indicate that the dielectric losses in these ceramics are the collective contribution of electric conduction, dipole orientation and space charge polarization. Smeared peaks in temperature dependence of permittivity plots suggest diffuse nature of high temperature ferroelectric phase transition. The light manganese doping in SLT enhances the dielectric constant. However, manganese doping decreases dielectric loss due to inhibition of domain wall motion, enhances electron-hopping conduction, and impedes the interlayer ionic conduction as well. Manganese doping also gives rise to contraction of interlayer space. (author)

Dielectric relaxation in solid collagen over a wide temperature range

International Nuclear Information System (INIS)

Khan, Muhammad Abdullah; Rizvi, Tasneem Zahra; Janjua, Khalid Mehmood; Zaheer, Muhammad Yar

2001-07-01

Dielectric constant ε' and loss factor ε'' have been measured in bovine tendon collagen in the frequency range 30 Hz - 3 MHz and temperature range 30 deg. C to 200 deg. C. Frequency dependence curve of ε'' shows a low frequency strong α-dispersion attributed to phonon assisted proton hopping between localized sites and a weak high frequency. α 2 - dispersion attributed to reorientation of polar components of collagen molecules. Temperature dependence of the dielectric data show release of bound moisture as a three step process with discrete peaks at 50 deg. C, 90 deg. C and 125 deg. C. These peaks have been attributed to release of adsorbed surface water, water bound to exposed polar sites and strongly bound internal moisture respectively. A peak observed at 160 deg. C has been attributed to thermally induced helix-coil transition of collagen molecules. (author)

Investigation of the dielectric properties of shale

International Nuclear Information System (INIS)

Martemyanov, Sergey M.

2011-01-01

The article is dedicated to investigation of the dielectric properties of oil shale. Investigations for samples prepared from shale mined at the deposit in Jilin Province in China were done. The temperature and frequency dependences of rock characteristics needed to calculate the processes of their thermal processing are investigated. Frequency dependences for the relative dielectric constant and dissipation factor of rock in the frequency range from 0,1 Hz to 1 MHz are investigated. The temperature dependences for rock resistance, dielectric capacitance and dissipation factor in the temperature range from 20 to 600°C are studied. Key words: shale, dielectric properties, relative dielectric constant, dissipation factor, temperature dependence, frequency dependence

Moderate temperature-dependent surface and volume resistivity and low-frequency dielectric constant measurements of pure and multi-walled carbon nanotube (MWCNT) doped polyvinyl alcohol thin films

Science.gov (United States)

Edwards, Matthew; Guggilla, Padmaja; Reedy, Angela; Ijaz, Quratulann; Janen, Afef; Uba, Samuel; Curley, Michael

2017-08-01

Previously, we have reported measurements of temperature-dependent surface resistivity of pure and multi-walled carbon nanotube (MWNCT) doped amorphous Polyvinyl Alcohol (PVA) thin films. In the temperature range from 22 °C to 40 °C with humidity-controlled environment, we found the surface resistivity to decrease initially, but to rise steadily as the temperature continued to increase. Moreover, electric surface current density (Js) was measured on the surface of pure and MWCNT doped PVA thin films. In this regard, the surface current density and electric field relationship follow Ohm's law at low electric fields. Unlike Ohmic conduction in metals where free electrons exist, selected captive electrons are freed or provided from impurities and dopants to become conduction electrons from increased thermal vibration of constituent atoms in amorphous thin films. Additionally, a mechanism exists that seemingly decreases the surface resistivity at higher temperatures, suggesting a blocking effect for conducting electrons. Volume resistivity measurements also follow Ohm's law at low voltages (low electric fields), and they continue to decrease as temperatures increase in this temperature range, differing from surface resistivity behavior. Moreover, we report measurements of dielectric constant and dielectric loss as a function of temperature and frequency. Both the dielectric constant and dielectric loss were observed to be highest for MWCNT doped PVA compared to pure PVA and commercial paper, and with frequency and temperature for all samples.

INVESTIGATION OF THE FREQUENCY-TEMPERATURE RELATIONSHIP OF THE DIELECTRIC PERMITTIVITY OF THE PZT PIEZOCERAMICS IN THE LOW FREQUENCY RANGE

Directory of Open Access Journals (Sweden)

A. I. ZOLOTAREVSKIY

2018-05-01

Full Text Available Purpose. To investigate the frequency-temperature relationship of the dielectric permittivity of PZT piezoceramics in the low frequency range. Methodology. To obtain the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics, a technique was used to determine the capacitance of the capacitor, between which plates the sample was placed. The value of the dielectric permittivity of the sample was calculated from the capacitor capacitance obtained. Findings. The frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low frequency range has been obtained by the authors. The dielectric permittivity is not practically related to the frequency of the alternating voltage at a low temperature, with increasing in temperature its value increases and frequency relationship is observed. The temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by the exponential functional dependence in the low-temperature range. The activation energy of the PZT piezoceramics polarization is determined from the graph of the dependence of the logarithm of the dielectric permittivity upon the inverse temperature. Different values of the activation energy for the two temperature regions prove on the existence of different mechanisms of the PZT piezoceramics polarization in the temperature range being investigated. Originality. The authors investigated the frequency-temperature relationship of the dielectric permittivity of the PZT piezoceramics in the low-frequency range. It is established that the temperature relationship of the dielectric permittivity of the PZT piezoceramics is satisfactorily described by an exponential functional relationship in the lowtemperature range. The activation energy of polarization is determined for two temperature sections. Practical value. The research results can be used to study the mechanism of polarization of

Field dependent dielectric behaviour of BaxSr1-xTiO3 perovskites

International Nuclear Information System (INIS)

Kukreti, Ashish; Ashok Kumar; Naithani, U.C.

2008-01-01

Using the method of double time thermal Green's function and Kubo formalism, a general expression has been derived for the electric field dependence of the complex dielectric constant of Ba x Sr 1-x TiO 3 ferroelectric crystal in the paraelectric phase from the Silverman-Joseph Hamiltonian augmented with fourth order phonon co-ordinates. The change of mass as well as harmonic force constant between impurity atom and host lattice atoms are taken into account. The frequency, temperature and electric field dependent dielectric constant of Ba x Sr 1-x TiO 3 crystal has been discussed. Dielectric constant increases with increase of applied field. The results are compared with previous experimental and theoretical results. (author)

Complete FDTD analysis of microwave heating processes in frequency-dependent and temperature dependent media

Energy Technology Data Exchange (ETDEWEB)

Torres, F.; Jecko, B. [Univ. de Limoges (France). Inst. de Recherche en Communications Optiques et Microondes

1997-01-01

It is well known that the temperature rise in a material modifies its physical properties and, particularly, its dielectric permittivity. The dissipated electromagnetic power involved in microwave heating processes depending on {var_epsilon}({omega}), the electrical characteristics of the heated media must vary with the temperature to achieve realistic simulations. In this paper, the authors present a fast and accurate algorithm allowing, through a combined electromagnetic and thermal procedure, to take into account the influence of the temperature on the electrical properties of materials. First, the temperature dependence of the complex permittivity ruled by a Debye relaxation equation is investigated, and a realistic model is proposed and validated. Then, a frequency-dependent finite-differences time-domain ((FD){sup 2}TD) method is used to assess the instantaneous electromagnetic power lost by dielectric hysteresis. Within the same iteration, a time-scaled form of the heat transfer equation allows one to calculate the temperature distribution in the heated medium and then to correct the dielectric properties of the material using the proposed model. These new characteristics will be taken into account by the EM solver at the next iteration. This combined algorithm allows a significant reduction of computation time. An application to a microwave oven is proposed.

Dielectric constant and laser beam propagation in an underdense collisional plasma: effects of electron temperature

International Nuclear Information System (INIS)

Xia Xiongping; Qin Zhen; Xu Bin; Cai Zebin

2011-01-01

Dielectric constant and laser beam propagation in an underdense collisional plasma are investigated, using the wave and dielectric function equations, for their dependence on the electron temperature. Simulation results show that, due to the influence of the ponderomotive force there is a nonlinear variation of electron temperature in an underdense collisional plasma, and this leads to a complicated and interesting nonlinear variation of dielectric constant; this nonlinear variation of dielectric constant directly affects the beam propagation and gives rise to laser beam self-focusing in some spatial-temporal regions; in particular, the beam width and the beam intensity present an oscillatory variation in the self-focusing region. The influence of several parameters on the dielectric function and beam self-focusing is discussed.

The dielectric α relaxation at a temperature close to T sub(g)

International Nuclear Information System (INIS)

Gomez Ribelles, J.L.; Diaz Calleja, R.

1985-01-01

It is shown in this work how the dependence of the mean relaxation times of the dielectric α relaxation on temperature deviates from the Williams, Landel and Ferry model at a temperature close to T sub(g). In some cases, an Arrhenius-like relationship for this relaxation can be observed for temperatures below T sub(g)

High temperature polymer film dielectrics for aerospace power conditioning capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Venkat, Narayanan, E-mail: venkats3@gmail.co [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Dang, Thuy D. [Air Force Research Laboratory-Nanostructured and Biological Materials Branch (AFRL/RXBN) (United States); Bai Zongwu; McNier, Victor K. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); DeCerbo, Jennifer N. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States); Tsao, B.-H. [University of Dayton Research Institute (UDRI), Dayton, OH 45469 (United States); Stricker, Jeffery T. [Air Force Research Laboratory-Electrical Technology Branch (AFRL/RZPE), Wright-Patterson Air Force Base, OH 45433 (United States)

2010-04-15

Polymer dielectrics are the preferred materials of choice for capacitive energy-storage applications because of their potential for high dielectric breakdown strengths, low dissipation factors and good dielectric stability over a wide range of frequencies and temperatures, despite having inherently lower dielectric constants relative to ceramic dielectrics. They are also amenable to large area processing into films at a relatively lower cost. Air Force currently has a strong need for the development of compact capacitors which are thermally robust for operation in a variety of aerospace power conditioning applications. While such applications typically use polycarbonate (PC) dielectric films in wound capacitors for operation from -55 deg. C to 125 deg. C, future power electronic systems would require the use of polymer dielectrics that can reliably operate up to elevated temperatures in the range of 250-350 deg. C. The focus of this research is the generation and dielectric evaluation of metallized, thin free-standing films derived from high temperature polymer structures such as fluorinated polybenzoxazoles, post-functionalized fluorinated polyimides and fluorenyl polyesters incorporating diamond-like hydrocarbon units. The discussion is centered mainly on variable temperature dielectric measurements of film capacitance and dissipation factor and the effects of thermal cycling, up to a maximum temperature of 350 deg. C, on film dielectric performance. Initial studies clearly point to the dielectric stability of these films for high temperature power conditioning applications, as indicated by their relatively low temperature coefficient of capacitance (TCC) (approx2%) over the entire range of temperatures. Some of the films were also found to exhibit good dielectric breakdown strengths (up to 470 V/mum) and a film dissipation factor of the order of <0.003 (0.3%) at the frequency of interest (10 kHz) for the intended applications. The measured relative dielectric

Temperature Effects of Dielectric Properties of ER Fluids

Science.gov (United States)

Qiu, Z. Y.; Hu, L.; Liu, M. W.; Bao, H. X.; Jiang, Y. G.; Zhou, L. W.; Tang, Y.; Gao, Z.; Sun, M.; Korobko, E. V.

Under the consideration of the role that energy transfer and dissipation play in ER effect, an improved theory frame for ER effects, polarization-dissipation-structure-rheology, is suggested. The theory frame is substantiated by the basic physical laws and certain critical experimental facts. The dielectric response of a diatomite ER fluid to temperature is measured in the temperature range of 140 K to 400 K. By comparison of the DC conductivity with the AC effective conductivity of the sample, we found that the AC dielectric loss consists of two parts. One part comes from the DC conductivity, the other from the response of the bound charges in scope of particle to AC field. It is suggested that the response of bound charges is very important to ER effects. Besides, the effect of temperature on shear stress is measured, and interpreted based on the dielectric measurements. The source of two loss peaks in the curve of the dielectric loss versus temperature is not clear.

Temperature-dependent field-effect carrier mobility in organic thin-film transistors with a gate SiO2 dielectric modified by H2O2 treatment

Science.gov (United States)

Lin, Yow-Jon; Hung, Cheng-Chun

2018-02-01

The effect of the modification of a gate SiO2 dielectric using an H2O2 solution on the temperature-dependent behavior of carrier transport for pentacene-based organic thin-film transistors (OTFTs) is studied. H2O2 treatment leads to the formation of Si(-OH) x (i.e., the formation of a hydroxylated layer) on the SiO2 surface that serves to reduce the SiO2 capacitance and weaken the pentacene-SiO2 interaction, thus increasing the field-effect carrier mobility ( µ) in OTFTs. The temperature-dependent behavior of carrier transport is dominated by the multiple trapping model. Note that H2O2 treatment leads to a reduction in the activation energy. The increased value of µ is also attributed to the weakening of the interactions of the charge carriers with the SiO2 dielectric that serves to reduce the activation energy.

Effects of Ni3+ substitution on structural and temperature dependent dielectrical properties of NdFeO3

International Nuclear Information System (INIS)

Kaur, Pawanpreet; Pandit, Rabia; Sharma, K. K.; Kumar, Ravi

2014-01-01

The polycrystalline samples of NdFe 1−x Ni x O 3 (x=0.0, 0.2) were prepared by solid state reaction route, the single phase of powdered samples were ensured by Rietveld refinement of their X-ray diffraction (XRD) data. We have also studied the variation of dielectric constant (ε′), tangent loss (tan δ) and AC conductivity (σ ac ) as a function of frequency and temperature for both the compositions. It is noticed that both the increase in temperature and Ni 3+ ion substitution results in enhancement of dielectric constant, tangent loss and AC conductivity

Development of a dielectric ceramic based on diatomite-titania part two: dielectric properties characterization

Directory of Open Access Journals (Sweden)

Medeiros Jamilson Pinto

1998-01-01

Full Text Available Dielectric properties of sintered diatomite-titania ceramics are presented. Specific capacitance, dissipation factor, quality factor and dielectric constant were determined as a function of sintering temperature, titania content and frequency; the temperature coefficient of capacitance was measured as a function of frequency. Besides leakage current, the dependence of the insulation resistance and the dielectric strength on the applied dc voltage were studied. The results show that diatomite-titania compositions can be used as an alternative dielectric.

The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

Science.gov (United States)

Papaioannou, George

The present work attempts to provide a better insight on the dielectric charging in RF-MEMS capacitive switches that constitutes a key issue limiting parameter of their commercialization. The dependence of the charging process on the nature of dielectric materials widely used in these devices, such as SiO2, Si3N4, AlN, Al2O3, Ta2O5, HfO2, which consist of covalent or ionic bonds and may exhibit piezoelectric properties is discussed taking into account the effect of deposition conditions and resulting material stoichiometry. Another key issue parameter that accelerates the charging and discharging processes by providing enough energy to trapped charges to be released and to dipoles to overcome potential barriers and randomize their orientation is the temperature will be investigated too. Finally, the effect of device structure will be also taken into account.

A dielectric approach to high temperature superconductivity

International Nuclear Information System (INIS)

Mahanty, J.; Das, M.P.

1989-01-01

The dielectric response of an electron-ion system to the presence of a pair of charges is investigated. From the nature of the dielectric function, it is shown that a strong attractive pair formation is possible depending on the dispersion of the ion branches. The latter brings a reduction to the sound velocity which is used as a criterion for the superconductivity. By solving the BCS equation with the above dielectric function, we obtain a reasonable value of T/sub c/. 17 refs., 1 fig

Effects of Ni{sup 3+} substitution on structural and temperature dependent dielectrical properties of NdFeO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kaur, Pawanpreet, E-mail: merry2286@gmail.com; Pandit, Rabia, E-mail: merry2286@gmail.com; Sharma, K. K., E-mail: merry2286@gmail.com [Department of Physics, National Institute of Technology Hamirpur-177005, Himachal Pradesh (India); Kumar, Ravi [Beant College of Engineering and Technology Gurdaspur-143521, Punjab (India)

2014-04-24

The polycrystalline samples of NdFe{sub 1−x}Ni{sub x}O{sub 3} (x=0.0, 0.2) were prepared by solid state reaction route, the single phase of powdered samples were ensured by Rietveld refinement of their X-ray diffraction (XRD) data. We have also studied the variation of dielectric constant (ε′), tangent loss (tan δ) and AC conductivity (σ{sub ac}) as a function of frequency and temperature for both the compositions. It is noticed that both the increase in temperature and Ni{sup 3+} ion substitution results in enhancement of dielectric constant, tangent loss and AC conductivity.

Characterization of frequency-dependent glass transition temperature by Vogel-Fulcher relationship

International Nuclear Information System (INIS)

Bai Yu; Jin Li

2008-01-01

The complex mechanical modulus of polymer and polymer based composite materials showed a frequency-dependent behaviour during glass transition relaxation, which was historically modelled by the Arrhenius equation. However, this might not be true in a broad frequency domain based on the experience from the frequency dependence of the complex dielectric permittivity, which resulted from the same glass transition relaxation as for the complex mechanical modulus. Considering a good correspondence between dielectric and mechanical relaxation during glass transition, the Vogel-Fulcher relationship, previously proposed for the frequency dependence of dielectric permittivity, is introduced for that of the mechanical modulus; and the corresponding static glass transition temperature (T f ) was first determined for polymer and polymer based composite materials. (fast track communication)

Temperature dependence of the dielectric permittivity of CaF{sub 2}, BaF{sub 2} and Al{sub 2}O{sub 3}: application to the prediction of a temperature-dependent van der Waals surface interaction exerted onto a neighbouring Cs(8P{sub 3/2}) atom

Energy Technology Data Exchange (ETDEWEB)

Passerat de Silans, Thierry; Maurin, Isabelle; Chaves de Souza Segundo, Pedro; Saltiel, Solomon; Gorza, Marie-Pascale; Ducloy, Martial; Bloch, Daniel [Laboratoire de Physique des Lasers, UMR 7538 du CNRS et de l' Universite Paris 13, 99 Avenue JB Clement, Villetaneuse (France); De Sousa Meneses, Domingos; Echegut, Patrick [CNRS, UPR 3079 CEMHTI, 1D Avenue de la Recherche Scientifique, F-45071 Orleans Cedex 2 (France)], E-mail: daniel.bloch@univ-paris13.fr

2009-06-24

The temperature behaviour in the range 22-500 deg. C of the dielectric permittivity in the infrared range is investigated for CaF{sub 2}, BaF{sub 2} and Al{sub 2}O{sub 3} through reflectivity measurements. The dielectric permittivity is retrieved by fitting reflectivity spectra with a model taking into account multiphonon contributions. The results extrapolated from the measurements are applied to predict a temperature-dependent atom-surface van der Waals interaction. We specifically consider as the atom of interest Cs(8P{sub 3/2}), the most relevant virtual couplings of which fall in the range of thermal radiation and are located in the vicinity of the reststrahlen band of fluoride materials.

Casimir free energy of dielectric films: classical limit, low-temperature behavior and control.

Science.gov (United States)

Klimchitskaya, G L; Mostepanenko, V M

2017-07-12

The Casimir free energy of dielectric films, both free-standing in vacuum and deposited on metallic or dielectric plates, is investigated. It is shown that the values of the free energy depend considerably on whether the calculation approach used neglects or takes into account the dc conductivity of film material. We demonstrate that there are material-dependent and universal classical limits in the former and latter cases, respectively. The analytic behavior of the Casimir free energy and entropy for a free-standing dielectric film at low temperature is found. According to our results, the Casimir entropy goes to zero when the temperature vanishes if the calculation approach with neglected dc conductivity of a film is employed. If the dc conductivity is taken into account, the Casimir entropy takes the positive value at zero temperature, depending on the parameters of a film, i.e. the Nernst heat theorem is violated. By considering the Casimir free energy of SiO 2 and Al 2 O 3 films deposited on a Au plate in the framework of two calculation approaches, we argue that physically correct values are obtained by disregarding the role of dc conductivity. A comparison with the well known results for the configuration of two parallel plates is made. Finally, we compute the Casimir free energy of SiO 2 , Al 2 O 3 and Ge films deposited on high-resistivity Si plates of different thicknesses and demonstrate that it can be positive, negative and equal to zero. The effect of illumination of a Si plate with laser light is considered. Possible applications of the obtained results to thin films used in microelectronics are discussed.

Casimir free energy of dielectric films: classical limit, low-temperature behavior and control

Science.gov (United States)

Klimchitskaya, G. L.; Mostepanenko, V. M.

2017-07-01

The Casimir free energy of dielectric films, both free-standing in vacuum and deposited on metallic or dielectric plates, is investigated. It is shown that the values of the free energy depend considerably on whether the calculation approach used neglects or takes into account the dc conductivity of film material. We demonstrate that there are material-dependent and universal classical limits in the former and latter cases, respectively. The analytic behavior of the Casimir free energy and entropy for a free-standing dielectric film at low temperature is found. According to our results, the Casimir entropy goes to zero when the temperature vanishes if the calculation approach with neglected dc conductivity of a film is employed. If the dc conductivity is taken into account, the Casimir entropy takes the positive value at zero temperature, depending on the parameters of a film, i.e. the Nernst heat theorem is violated. By considering the Casimir free energy of SiO2 and Al2O3 films deposited on a Au plate in the framework of two calculation approaches, we argue that physically correct values are obtained by disregarding the role of dc conductivity. A comparison with the well known results for the configuration of two parallel plates is made. Finally, we compute the Casimir free energy of SiO2, Al2O3 and Ge films deposited on high-resistivity Si plates of different thicknesses and demonstrate that it can be positive, negative and equal to zero. The effect of illumination of a Si plate with laser light is considered. Possible applications of the obtained results to thin films used in microelectronics are discussed.

Dielectric properties of some cadmium and mercury amino alcohol complexes at low temperatures

Directory of Open Access Journals (Sweden)

ALAA E. ALI

2002-12-01

Full Text Available The dielectric properties of some cadmium and mercury amino alcohol complexes were studied within the temperature range of 100–300 K at the frequencies of 100, 300 and 1000 kHz. The polarization mechanisms are suggested and the dependence of both e and tg d on both temperature and frequency are analyzed. The analysis of the data reveals semi-conducting features based mainly on the hopping mechanism.

Dependence of Ozone Generation on Gas Temperature Distribution in AC Atmospheric Pressure Dielectric Barrier Discharge in Oxygen

Science.gov (United States)

Takahashi, Go; Akashi, Haruaki

AC atmospheric pressure multi-filament dielectric barrier discharge in oxygen has been simulated using two dimensional fluid model. In the discharge, three kinds of streamers have been obtained. They are primary streamers, small scale streamers and secondary streamers. The primary streamers are main streamers in the discharge and the small scale streamers are formed after the ceasing of the primary streamers. And the secondary streamers are formed on the trace of the primary streamers. In these streamers, the primary and the small scale streamers are very effective to generate O(3P) oxygen atoms which are precursor of ozone. And the ozone is generated mainly in the vicinity of the dielectrics. In high gas temperature region, ozone generation decreases in general. However, increase of the O(3P) oxygen atom density in high gas temperature region compensates decrease of ozone generation rate coefficient. As a result, amount of ozone generation has not changed. But if the effect of gas temperature was neglected, amount of ozone generation increases 10%.

Aging of Dielectric Properties below Tg

DEFF Research Database (Denmark)

Olsen, Niels Boye; Dyre, Jeppe; Christensen, Tage Emil

The dielectric loss at 1Hz in TPP is studied during a temperature step from one equilibrium state to another. In the applied cryostate the temperature can be equilibrated on a timescale of 1 second. The aging time dependence of the dielectric loss is studied below Tg applying temperature steps...

High temperature dielectric properties of spent adsorbent with zinc sulfate by cavity perturbation technique

Energy Technology Data Exchange (ETDEWEB)

Lin, Guo [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Liu, Chenhui [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); Faculty of Chemistry and Environment, Yunnan Minzu University, Kunming, Yunnan 650093 (China); Zhang, Libo, E-mail: libozhang77@163.com [State Key Laboratory of Complex Nonferrous Metal Resources Clean Utilization, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming, Yunnan 650093 (China); Key Laboratory of Unconventional Metallurgy, Ministry of Education, Kunming, Yunnan 650093 (China); National Local Joint Laboratory of Engineering Application of Microwave Energy and Equipment Technology, Kunming, Yunnan 650093 (China); and others

2017-05-15

Highlights: • Cavity perturbation technique is employed to measure the dielectric properties. • Microwave absorption capability of ZnO is poor from 20 °C to 850 °C. • Dielectric properties of spent absorbent and zinc sulfate are influenced by temperature especially in high temperature stage. • Penetration depths and heating curve indicate spent adsorbent and ZnO·2ZnSO{sub 4}, ZnSO{sub 4} are excellent microwave absorber. • The pore structures of spent adsorbent are improved significantly by microwave-regeneration directly. - Abstract: Dielectric properties of spent adsorbent with zinc sulfate are investigated by cavity perturbation technique at 2450 MHz from 20 °C to approximately 1000 °C. Two weight loss stages are observed for spent adsorbent by thermogravimetric-differential scanning calorimeter (TG-DSC) analysis, and zinc sulfate is decomposed to ZnO·2ZnSO{sub 4} and ZnO at about 750 °C and 860 °C. Microwave absorption capability of ZnSO{sub 4} increases with increasing temperature and declines after ZnO generation on account of the poor dielectric properties. Dielectric properties of spent adsorbent are dependent on apparent density and noticed an interestingly linearly relationship at room temperature. The three parameters increase gently from 20 °C to 400 °C, but a sharp increase both in real part and imaginary part are found subsequently due to the volatiles release and regeneration of carbon. And material conductivity is improved, which contributes to the π-electron conduction appearance. Relationship between penetration depth and temperature further elaborate spent adsorbent is an excellent microwave absorber and the microwave absorption capability order of zinc compounds is ZnO·2ZnSO{sub 4}, ZnSO{sub 4} and ZnO. Heating characteristics suggest that heating rate is related with dielectric properties of materials. The pore structures of spent adsorbent are improved significantly and the surface is smoother after microwave-regeneration.

Calculation of the Spontaneous Polarization and the Dielectric Constant as a Function of Temperature for

Directory of Open Access Journals (Sweden)

Hamit Yurtseven

2012-01-01

Full Text Available The temperature dependence of the spontaneous polarization P is calculated in the ferroelectric phase of KH2PO4 (KDP at atmospheric pressure (TC = 122 K. Also, the dielectric constant ε is calculated at various temperatures in the paraelectric phase of KDP at atmospheric pressure. For this calculation of P and ε, by fitting the observed Raman frequencies of the soft mode, the microscopic parameters of the pure tunnelling model are obtained. In this model, the proton-lattice interaction is not considered and the collective proton mode is identified with the soft-mode response of the system. Our calculations show that the spontaneous polarization decreases continuously in the ferroelectric phase as approaching the transition temperature TC. Also, the dielectric constant decreases with increasing temperature and it diverges in the vicinity of the transition temperature (TC = 122 K for KDP according to the Curie-Weiss law.

Dielectric properties of lunar surface

Science.gov (United States)

Yushkova, O. V.; Kibardina, I. N.

2017-03-01

Measurements of the dielectric characteristics of lunar soil samples are analyzed in the context of dielectric theory. It has been shown that the real component of the dielectric permittivity and the loss tangent of rocks greatly depend on the frequency of the interacting electromagnetic field and the soil temperature. It follows from the analysis that one should take into account diurnal variations in the lunar surface temperature when interpreting the radar-sounding results, especially for the gigahertz radio range.

High temperature measurements of the microwave dielectric properties of ceramics

International Nuclear Information System (INIS)

Baeraky, T.A.

1999-06-01

Equipment has been developed for the measurement of dielectric properties at high temperature from 25 to 1700 deg. C in the microwave frequency range 614.97 to 3620.66 MHz using the cavity perturbation technique, to measure the permittivity of a range of ceramic materials. The complex permittivities of the standard materials, water and methanol, were measured at low temperature and compared with the other published data. A statistical analysis was made for the permittivity measurements of water and methanol using sample holders of different diameter. Also the measurements of these materials were used to compare the simple perturbation equation with its modifications and alternation correction methods for sample shape and the holes at the two endplates of the cavity. The dielectric properties of solid materials were investigated from the permittivity measurements on powder materials, shown in table 4.7, using the dielectric mixture equations. Two kinds of ceramics, oxide and nitrides, were selected for the high temperature dielectric measurements in microwave frequency ranges. Pure zirconia, yttria-stabilised zirconia, and Magnesia-stabilised zirconia are the oxide ceramics while aluminium nitride and silicon nitride are the nitride ceramics. A phase transformation from monoclinic to tetragonal was observed in pure zirconia in terms of the complex permittivity measurements, and the conduction mechanism in three regions of temperature was suggested to be ionic in the first region and a mixture of ionic and electronic in the second. The phase transition disappeared with yttria-stabilised zirconia but it was observed with magnesia-stabilised zirconia. Yttria doped zirconia was fully stabilised while magnesia stabilised was partially stabilised zirconia. The dielectric property measurements of aluminium nitride indicated that there is a transition from AIN to AlON, which suggested that the external layer of the AIN which was exposed to the air, contains alumina. It was

Low temperature dielectric relaxation and charged defects in ferroelectric thin films

Directory of Open Access Journals (Sweden)

A. Artemenko

2013-04-01

Full Text Available We report a dielectric relaxation in BaTiO3-based ferroelectric thin films of different composition and with several growth modes: sputtering (with and without magnetron and sol-gel. The relaxation was observed at cryogenic temperatures (T < 100 K for frequencies from 100 Hz up to 10 MHz. This relaxation activation energy is always lower than 200 meV and is very similar to the relaxation that we reported in the parent bulk perovskites. Based on our Electron Paramagnetic Resonance (EPR investigation, we ascribe this dielectric relaxation to the hopping of electrons among Ti3+-V(O charged defects. Being dependent on the growth process and on the amount of oxygen vacancies, this relaxation can be a useful probe of defects in actual integrated capacitors with no need for specific shaping.

Dielectric behavior of CaCu3Ti4O12: Poly Vinyl Chloride ceramic polymer composites at different temperature and frequencies

Directory of Open Access Journals (Sweden)

Ajay Pratap Singh

2016-12-01

Full Text Available In this study, the efforts have been made to obtain relatively high dielectric constant polymer-ceramic composite by incorporating the giant dielectric constant material, calcium copper titanate (CCTO in a PVC polymer matrix. We have prepared composites of CaCu3Ti4O12 (CCTO ceramic and Poly Vinyl Chloride (PVC polymer in various ratios (by volume in addition to pure CCTO. For this, CCTO was prepared by the conventional oxide route (solid-state reaction method. The structural, the microstructural and the dielectric properties of the composites were studied using X-ray diffraction, Scanning Electron Microscope, and impedance analyzer respectively. The study of dielectric constant and dielectric loss of the pure CCTO and the composites reveal that there is good range of dielectric constants and dielectric losses for the studied composites. The pure sample of CCTO exhibits giant dielectric constant at low frequency within the studied temperature range. As frequency increases, dielectric constant drastically decreases and approaching a constant value at 1 MHz. Above the intermediate temperature, the dielectric constant and dielectric loss for pure CCTO is more frequency dependent than its composites.

Influence of temperature on the dielectric nonlinearity of BaTiO{sub 3}-based multi-layer ceramic capacitors

Energy Technology Data Exchange (ETDEWEB)

Yoon, Seok-Hyun, E-mail: seokhyun72.yoon@samsung.com; Kim, Mi-Yang [LCR Materials Group, Corporate R& D Institute, Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-Do 443-743 (Korea, Republic of)

2016-06-13

Temperature dependence of the dielectric nonlinearity was investigated for the BaTiO{sub 3} multilayer ceramic capacitor. The decrease in temperature caused a significant increase in the degree of dielectric nonlinearity. The Preisach analysis shows that such effect corresponds to a decrease in reversible and a significant increase in irreversible domain wall contribution to polarization. The magnitude of spontaneous polarization (P{sub S}) was increased with decreasing temperature. It can be associated with phase transition from pseudo-cubic to monoclinic and its resultant change in the polar direction, which was observed through transmission electron microscopy. These results demonstrate that the increase in P{sub S} with the decrease in temperature inhibits domain wall motion in low driving field as it is anticipated to increase the degree of intergranular constraints during domain wall motion. But it results in a more steep increase in the dielectric constants beyond the threshold field where domain wall motion can occur.

Transport and dielectric properties of double perovskite Pr2CoFeO6

Science.gov (United States)

Pal, Arkadeb; Singh, A.; Gangwar, V. K.; Chatterjee, Sandip

2018-04-01

The transport and dielectric measurements have been investigated for the polycrystalline double perovskite Pr2CoFeO6. In the temperature dependent resistivity measurement, we have observed semiconducting nature of the sample with activation energy 0.246 eV. In dielectric measurement as a function of temperature, a giant value of dielectric constant is observed at room temperature, the frequency dependence suggests a relaxor type dielectric relaxation.

Dielectric Behavior of Low Microwave Loss Unit Cell for All Dielectric Metamaterial

Directory of Open Access Journals (Sweden)

Tianhuan Luo

2015-01-01

Full Text Available With a deep study of the metamaterial, its unit cells have been widely extended from metals to dielectrics. The dielectric based unit cells attract much attention because of the advantage of easy preparation, tunability, and higher frequency response, and so forth. Using the conventional solid state method, we prepared a kind of incipient ferroelectrics (calcium titanate, CaTiO3 with higher microwave permittivity and lower loss, which can be successfully used to construct metamaterials. The temperature and frequency dependence of dielectric constant are also measured under different sintering temperatures. The dielectric spectra showed a slight permittivity decrease with the increase of temperature and exhibited a loss of 0.0005, combined with a higher microwave dielectric constant of ~167 and quality factor Q of 2049. Therefore, CaTiO3 is a kind of versatile and potential metamaterial unit cell. The permittivity of CaTiO3 at higher microwave frequency was also examined in the rectangular waveguide and we got the permittivity of 165, creating a new method to test permittivity at higher microwave frequency.

Dielectric and impedance spectral characteristics of bulk ZnIn2Se4

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Salem, G. F.; Ali, H. A. M.; Ismail, M. I.

2014-02-01

The frequency and temperature dependence of ac conductivity, dielectric constant and dielectric loss of ZnIn2Se4 in a pellet form were investigated in the frequency range of 102-106 Hz and temperature range of 293-356 K. The behavior of ac conductivity was interpreted by the correlated barrier hopping (CBH) model. Temperature dependence of ac conductivity indicates that ac conduction is a thermally activated process. The density of localized states N(EF) and ac activation energy were estimated for various frequencies. Dielectric constant and dielectric loss showed a decrease with increasing frequency and an increase with increasing in temperature. The frequency dependence of real and imaginary parts of the complex impedance was investigated. The relaxation time decreases with the increase in temperature. The impedance spectrum exhibits the appearance of the single semicircular arc. The radius of semicircular arcs decreases with increasing temperature which suggests a mechanism of temperature-dependent on relaxation.

Dielectric Properties of Marsh Vegetation in a Frequency Range of 0.1-18 GHz Under Variation of Temperature and Moisture

Science.gov (United States)

Romanov, A. N.; Kochetkova, T. D.; Suslyaev, V. I.; Shcheglova, A. S.

2017-09-01

Dielectric characteristics of some species of marsh vegetation: lichen Cladonia stellaris (Opiz) Pouzar, moss Sphagnum, and a representative of Bryidae mosses - Dicranum polysetum are studied in the frequency range from 100 MHz to 18 GHz. At a frequency of 1.41 GHz, the influence of temperature in the range from -12 to +20°C on the behavior of dielectric characteristics of mosses, lichens, and peat is studied. The dependences of the dielectric characteristics of vegetation on the volumetric wetness are established.

Heat and mass transfer in a contaminated porous concrete slab with variable dielectric properties

International Nuclear Information System (INIS)

Li, W.; Ebadian, M.A.

1994-01-01

The effect of temperature dependent dielectric properties on concrete decontamination and decommissioning using microwave technology is investigated theoretically in this paper. The concrete is treated as a porous material, which has residual water and air within the pores. A one-dimensional model of unsteady heat and mass transport in the porous concrete with temperature dependent dielectric properties is developed. Based on this model, temperature and pressure with different microwave frequencies are predicted, the effects of the temperature dependent dielectric properties on microwave power dissipation, the temperature and pressure distributions for different microwave frequencies, and the different microwave power intensities are analyzed in detail. Four available industrial microwave frequencies of 0.896, 2.45, 10.6 and 18.0 GHz are used in the analysis. As a result of the dielectric properties varying with temperature, the power dissipation also varies with the heating times. Comparing the results for both temperature dependent and constant dielectric properties reveals that the variation of dielectric permittivity with temperature must be considered in a theoretical model of the concrete decontamination and decommissioning process for a low microwave frequency (f <2.45 GHz). (Author)

High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

Energy Technology Data Exchange (ETDEWEB)

Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

2015-08-31

This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

Communication: Modeling electrolyte mixtures with concentration dependent dielectric permittivity

Science.gov (United States)

Chen, Hsieh; Panagiotopoulos, Athanassios Z.

2018-01-01

We report a new implicit-solvent simulation model for electrolyte mixtures based on the concept of concentration dependent dielectric permittivity. A combining rule is found to predict the dielectric permittivity of electrolyte mixtures based on the experimentally measured dielectric permittivity for pure electrolytes as well as the mole fractions of the electrolytes in mixtures. Using grand canonical Monte Carlo simulations, we demonstrate that this approach allows us to accurately reproduce the mean ionic activity coefficients of NaCl in NaCl-CaCl2 mixtures at ionic strengths up to I = 3M. These results are important for thermodynamic studies of geologically relevant brines and physiological fluids.

Visualization of dielectric constant-electric field-temperature phase maps for imprinted relaxor ferroelectric thin films

International Nuclear Information System (INIS)

Frederick, J. C.; Kim, T. H.; Maeng, W.; Brewer, A. A.; Podkaminer, J. P.; Saenrang, W.; Vaithyanathan, V.; Schlom, D. G.; Li, F.; Chen, L.-Q.; Trolier-McKinstry, S.; Rzchowski, M. S.; Eom, C. B.

2016-01-01

The dielectric phase transition behavior of imprinted lead magnesium niobate–lead titanate relaxor ferroelectric thin films was mapped as a function of temperature and dc bias. To compensate for the presence of internal fields, an external electric bias was applied while measuring dielectric responses. The constructed three-dimensional dielectric maps provide insight into the dielectric behaviors of relaxor ferroelectric films as well as the temperature stability of the imprint. The transition temperature and diffuseness of the dielectric response correlate with crystallographic disorder resulting from strain and defects in the films grown on strontium titanate and silicon substrates; the latter was shown to induce a greater degree of disorder in the film as well as a dielectric response lower in magnitude and more diffuse in nature over the same temperature region. Strong and stable imprint was exhibited in both films and can be utilized to enhance the operational stability of piezoelectric devices through domain self-poling.

Temperature-dependent electrical property transition of graphene oxide paper

International Nuclear Information System (INIS)

Huang Xingyi; Jiang Pingkai; Zhi Chunyi; Golberg, Dmitri; Bando, Yoshio; Tanaka, Toshikatsu

2012-01-01

Reduction of graphene oxide is primarily important because different reduction methods may result in graphene with totally different properties. For systematically exploring the reduction of graphene oxide, studies of the temperature-dependent electrical properties of graphene oxide (GO) are urgently required. In this work, for the first time, broadband dielectric spectroscopy was used to carry out an in situ investigation on the transition of the electrical properties of GO paper from −40 to 150 °C. The results clearly reveal a very interesting four-stage transition of electrical properties of GO paper with increasing temperature: insulator below 10 °C (stage 1), semiconductor at between 10 and 90 °C (stage 2), insulator at between 90 and 100 °C (stage 3), and semiconductor again at above 100 °C (stage 4). Subsequently, the transition mechanism was discussed in combination with detailed dielectric properties, microstructure and thermogravimetric analyses. It is suggested that the temperature-dependent transition of electronic properties of GO is closely associated with the ion mobility, water molecules removal and the reduction of GO in the GO paper. Most importantly, the present work clearly demonstrates the reduction of GO paper starts at above 100 °C. (paper)

Critical behavior of the dielectric constant in asymmetric fluids.

Science.gov (United States)

Bertrand, C E; Sengers, J V; Anisimov, M A

2011-12-08

By applying a thermodynamic theory that incorporates the concept of complete scaling, we derive the asymptotic temperature dependence of the critical behavior of the dielectric constant above the critical temperature along the critical isochore and below the critical temperature along the coexistence curve. The amplitudes of the singular terms in the temperature expansions are related to the changes of the critical temperature and the critical chemical potential upon the introduction of an electric field. The results of the thermodynamic theory are then compared with the critical behavior implied by the classical Clausius-Mossotti approximation. The Clausius-Mossotti approximation fails to account for any singular temperature dependence of the dielectric constant above the critical temperature. Below the critical temperature it produces an apparent asymmetric critical behavior with singular terms similar to those implied by the thermodynamic theory, but with significantly different coefficients. We conclude that the Clausius-Mossotti approximation only can account for the observed asymptotic critical behavior of the dielectric constant when the dependence of the critical temperature on the electric field is negligibly small. © 2011 American Chemical Society

Temperature dependent optical properties of ZnO thin film using ellipsometry and photoluminescence

Science.gov (United States)

Bouzourâa, M.-B.; Battie, Y.; Dalmasso, S.; Zaïbi, M.-A.; Oueslati, M.; En Naciri, A.

2018-05-01

We report the temperature dependence of the dielectric function, the exciton binding energy and the electronic transitions of crystallized ZnO thin film using spectroscopic ellipsometry (SE) and photoluminescence (PL). ZnO layers were prepared by sol-gel method and deposited on crystalline silicon (Si) by spin coating technique. The ZnO optical properties were determined between 300 K and 620 K. Rigorous study of optical responses was achieved in order to demonstrate the quenching exciton of ZnO as a function of temperature. Numerical technique named constrained cubic splines approximation (CCS), Tauc-Lorentz (TL) and Tanguy dispersion models were selected for the ellipsometry data modeling in order to obtain the dielectric function of ZnO. The results reveals that the exciton bound becomes widely flattening at 470 K on the one hand, and on the other that the Tanguy dispersion law is more appropriate for determining the optical responses of ZnO thin film in the temperature range of 300 K-420 K. The Tauc-Lorentz, for its part, reproduces correctly the ZnO dielectric function in 470 K-620 K temperature range. The temperature dependence of the electronic transition given by SE and PL shows that the exciton quenching was observed in 420 K-∼520 K temperature range. This quenching effect can be explained by the equilibrium between the Coulomb force of exciton and its kinetic energy in the film. The kinetic energy was found to induce three degrees of freedom of the exciton.

Partial oxidation of methane in a temperature-controlled dielectric barrier discharge reactor

KAUST Repository

Zhang, Xuming

2015-01-01

We studied the relative importance of the reduced field intensity and the background reaction temperature in the partial oxidation of methane in a temperature-controlled dielectric barrier discharge reactor. We obtained important mechanistic insight from studying high-temperature and low-pressure conditions with similar reduced field intensities. In the tested range of background temperatures (297 < T < 773 K), we found that the conversion of methane and oxygen depended on both the electron-induced chemistry and the thermo-chemistry, whereas the chemical pathways to the products were overall controlled by the thermo-chemistry at a given temperature. We also found that the thermo-chemistry enhanced the plasma-assisted partial oxidation process. Our findings expand our understanding of the plasma-assisted partial oxidation process and may be helpful in the design of cost-effective plasma reformers. © 2014 The Combustion Institute.

Dielectric relaxation in AgI doped silver selenomolybdate glasses

Science.gov (United States)

Palui, A.; Shaw, A.; Ghosh, A.

2016-05-01

We report the study of dielectric properties of some silver ion conducting silver selenomolybdate mixed network former glasses in a wide frequency and temperature range. The experimental data have been analyzed in the framework of complex dielectric permittivity. The dielectric permittivity data have been well interpreted using the Cole-Cole function. The temperature dependence of relaxation time obtained from real part of dielectric permittivity data shows an Arrhenius behavior. The activation energy shows a decreasing trend with the increase of doping content. Values of stretched exponential parameter are observed to be independent of temperature and composition.

High-Efficiency Dielectric Metasurfaces for Polarization-Dependent Terahertz Wavefront Manipulation

KAUST Repository

Zhang, Huifang

2017-11-30

Recently, metasurfaces made up of dielectric structures have drawn enormous attentions in the optical and infrared regimes due to their high efficiency and designing freedom in manipulating light propagation. Such advantages can also be introduced to terahertz frequencies where efficient functional devices are still lacking. Here, polarization-dependent all-silicon terahertz dielectric metasurfaces are proposed and experimentally demonstrated. The metasurfaces are composed of anisotropic rectangular-shaped silicon pillars on silicon substrate. Each metasurface holds dual different functions depending on the incident polarizations. Furthermore, to suppress the reflection loss and multireflection effect in practical applications, a high-performance polarization-independent antireflection silicon pillar array is also proposed, which can be patterned at the other side of the silicon substrate. Such all-silicon dielectric metasurfaces are easy to fabricate and can be very promising in developing next-generation efficient, compact, and low-cost terahertz functional devices.

Dielectric properties of polyethylene

International Nuclear Information System (INIS)

Darwish, S.; Riad, A.S.; El-Shabasy, M.

2005-01-01

The temperature dependence of dielectric properties in polyethylene was measured in the frequency range from 10 to 105 Hz. The frequency dependence of the complex impedance in the complex plane could be fitted by semicircles. The system could be represented by an equivalent circuit of a bulk resistance in series with parallel surface resistance-capacitance combination. The relaxation time, has been evaluated from experimental results. Results reveal that the temperature dependence, is a thermally activated process

A measurement technique of time-dependent dielectric breakdown in MOS capacitors

Science.gov (United States)

Li, S. P.

1974-01-01

The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.

Structural, dielectric and electrical properties of Sm-modified Pb ...

Indian Academy of Sciences (India)

Unknown

diffraction (XRD) analysis, detailed temperature and frequency dependence dielectric measurements on them. The a.c. conductivity has been investigated over a wide range of temperature and the activation energy (Ea.c.) has also been calculated. It is observed that (i) the dielectric permittivity (ε) and loss tangent (tan δ) are.

Time-dependent non-equilibrium dielectric response in QM/continuum approaches

Energy Technology Data Exchange (ETDEWEB)

Ding, Feizhi; Lingerfelt, David B.; Li, Xiaosong, E-mail: benedetta.mennucci@unipi.it, E-mail: li@chem.washington.edu [Department of Chemistry, University of Washington, Seattle, Washington 98195 (United States); Mennucci, Benedetta, E-mail: benedetta.mennucci@unipi.it, E-mail: li@chem.washington.edu [Dipartimento di Chimica e Chimica Industriale, Università di Pisa, Via Risorgimento 35, 56126 Pisa (Italy)

2015-01-21

The Polarizable Continuum Models (PCMs) are some of the most inexpensive yet successful methods for including the effects of solvation in quantum-mechanical calculations of molecular systems. However, when applied to the electronic excitation process, these methods are restricted to dichotomously assuming either that the solvent has completely equilibrated with the excited solute charge density (infinite-time limit), or that it retains the configuration that was in equilibrium with the solute prior to excitation (zero-time limit). This renders the traditional PCMs inappropriate for resolving time-dependent solvent effects on non-equilibrium solute electron dynamics like those implicated in the instants following photoexcitation of a solvated molecular species. To extend the existing methods to this non-equilibrium regime, we herein derive and apply a new formalism for a general time-dependent continuum embedding method designed to be propagated alongside the solute’s electronic degrees of freedom in the time domain. Given the frequency-dependent dielectric constant of the solvent, an equation of motion for the dielectric polarization is derived within the PCM framework and numerically integrated simultaneously with the time-dependent Hartree fock/density functional theory equations. Results for small molecular systems show the anticipated dipole quenching and electronic state dephasing/relaxation resulting from out-of-phase charge fluctuations in the dielectric and embedded quantum system.

DC-bias and visible light effect on dielectric characteristics of La0.5Cr0.5TiO3+δ

Directory of Open Access Journals (Sweden)

Yan Chen

2017-10-01

Full Text Available La0.5Cr0.5TiO3+δ ceramic sample was prepared via traditional solid-state reaction route. Frequency and temperature dependence of dielectric permittivity were studied in the range of 102 ~ 106 Hz and of 77 ~ 360 K, respectively. It was observed that extraordinarily high low-frequency dielectric constants appeared at room temperature, and dielectric relaxation peaks shifted to higher temperature with increasing frequency. In the dc-bias studies, it was also found that the dielectric permittivity had obviously dc-bias dependence in low frequency, but independence as the frequency above 14 kHz. Interestingly, the dielectric characteristics of the sample had obvious light dependence at room temperature within the measured frequency range. The results demonstrate that visible light improves the dielectric properties of the ceramic by means of I–V and complex impedance analysis. Keywords: Ceramics, Dielectric properties, Dc-bias dependence, Visible light dependence

Dielectric relaxations above room temperature in DMPU derived polyaniline film

International Nuclear Information System (INIS)

Mallya, Ashwini N.; Yashavanth Kumar, G.S.; Ranjan, Rajeev; Ramamurthy, Praveen C.

2012-01-01

Dielectric measurements carried out on drop casted from solution of emeraldine base form of polyaniline films in the temperature range 30-300 °C revealed occurrence of two maxima in the loss tangent as a function of temperature. The activation energies corresponding to these two relaxation processes were found to be ∼0.5 eV and ∼1.5 eV. The occurrence of one relaxation peak in the dispersion curve of the imaginary part of the electric modulus suggests the absence of microphase separation in the film. Thermogravimetric analysis and infrared spectroscopic measurements showed that the films retained its integrity up to 300 °C. The dielectric relaxation at higher temperatures with large activation energy of 1.5 eV is attributed to increase in the barrier potential due to decrease in the polymer conjugation as a result of wide amplitude motion of the chain segments well above the glass transition temperature.

Dielectric relaxations above room temperature in DMPU derived polyaniline film

Energy Technology Data Exchange (ETDEWEB)

Mallya, Ashwini N.; Yashavanth Kumar, G.S.; Ranjan, Rajeev [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India); Ramamurthy, Praveen C., E-mail: onegroupb203@gmail.com [Department of Materials Engineering, Indian Institute of Science, Bangalore 560012 (India)

2012-09-15

Dielectric measurements carried out on drop casted from solution of emeraldine base form of polyaniline films in the temperature range 30-300 Degree-Sign C revealed occurrence of two maxima in the loss tangent as a function of temperature. The activation energies corresponding to these two relaxation processes were found to be {approx}0.5 eV and {approx}1.5 eV. The occurrence of one relaxation peak in the dispersion curve of the imaginary part of the electric modulus suggests the absence of microphase separation in the film. Thermogravimetric analysis and infrared spectroscopic measurements showed that the films retained its integrity up to 300 Degree-Sign C. The dielectric relaxation at higher temperatures with large activation energy of 1.5 eV is attributed to increase in the barrier potential due to decrease in the polymer conjugation as a result of wide amplitude motion of the chain segments well above the glass transition temperature.

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-01-01

Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

AC conductivity and dielectric behavior of bulk Furfurylidenemalononitrile

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.

2012-06-01

AC conductivity and dielectric behavior for bulk Furfurylidenemalononitrile have been studied over a temperature range (293-333 K) and frequency range (50-5×106 Hz). The frequency dependence of ac conductivity, σac, has been investigated by the universal power law, σac(ω)=Aωs. The variation of the frequency exponent (s) with temperature was analyzed in terms of different conduction mechanisms, and it was found that the correlated barrier hopping (CBH) model is the predominant conduction mechanism. The temperature dependence of σac(ω) showed a linear increase with the increase in temperature at different frequencies. The ac activation energy was determined at different frequencies. Dielectric data were analyzed using complex permittivity and complex electric modulus for bulk Furfurylidenemalononitrile at various temperatures.

Simultaneous achievement of high dielectric constant and low temperature dependence of capacitance in (111-oriented BaTiO3-Bi(Mg0.5Ti0.5O3-BiFeO3 solid solution thin films

Directory of Open Access Journals (Sweden)

Junichi Kimura

2016-01-01

Full Text Available The temperature dependence of the capacitance of (111c-oriented (0.90–xBaTiO3-0.10Bi(Mg0.5Ti0.5O3-xBiFeO3 solid solution films is investigated. These films are prepared on (111cSrRuO3/(111Pt/TiO2/SiO2/(100Si substrates by the chemical solution deposition technique. All the films have perovskite structures and the crystal symmetry at room temperature varies with increasing x ratio, from pseudocubic when x = 0–0.30 to rhombohedral when x = 0.50–0.90. The pseudocubic phase shows a high relative dielectric constant (εr (ranging between 400 and 560 at room temperature and an operating frequency of 100 kHz and a low temperature dependence of capacitance up to 400°C, while maintaining a dielectric loss (tan δ value of less than 0.2 at 100 kHz. In contrast, εr for the rhombohedral phase increases monotonically with increasing temperature up to 250°C, and increasingly high tan δ values are recorded at higher temperatures. These results indicate that pseudocubic (0.90–xBaTiO3-0.10Bi(Mg0.5Ti0.5O3-xBiFeO3 solid solution films with (111 orientation are suitable candidates for high-temperature capacitor applications.

Dielectric relaxation of selenium-tellurium mixed former glasses

Science.gov (United States)

Palui, A.; Ghosh, A.

2017-05-01

We report the study of dielectric properties of mixed network former glasses of composition 0.3Ag2O-0.7(xSeO2-(1-x)TeO2); x=0, 0.1, 0.3, 0.4, 0.5 and 0.6 in a wide frequency 10 Hz - 2 MHz and temperature range 223 K - 403 K. The experimental data have been analyzed in the framework of complex dielectric permittivity. The dielectric permittivity data have been analyzed using the Cole-Cole function. The inverse temperature dependence of relaxation time obtained from real part of dielectric permittivity data follows the Arrhenius relation. The activation energy shows mixed glass former effect with variation of mixed former ratio. A non-zero value of shape parameters is observed and it is almost independent of temperature and composition.

Molding of plasmonic resonances in metallic nanostructures: Dependence of the non-linear electric permittivity on system size and temperature

KAUST Repository

Alabastri, A.; Tuccio, S.; Giugni, A.; Toma, A.; Liberale, Carlo; Das, G.; Angelis, F.D.; Fabrizio, E.D.; Zaccaria, R.P.

2013-01-01

In this paper, we review the principal theoretical models through which the dielectric function of metals can be described. Starting from the Drude assumptions for intraband transitions, we show how this model can be improved by including interband absorption and temperature effect in the damping coefficients. Electronic scattering processes are described and included in the dielectric function, showing their role in determining plasmon lifetime at resonance. Relationships among permittivity, electric conductivity and refractive index are examined. Finally, a temperature dependent permittivity model is presented and is employed to predict temperature and non-linear field intensity dependence on commonly used plasmonic geometries, such as nanospheres. 2013 by the authors; licensee MDPI, Basel, Switzerland.

Molding of plasmonic resonances in metallic nanostructures: Dependence of the non-linear electric permittivity on system size and temperature

KAUST Repository

Alabastri, A.

2013-10-25

In this paper, we review the principal theoretical models through which the dielectric function of metals can be described. Starting from the Drude assumptions for intraband transitions, we show how this model can be improved by including interband absorption and temperature effect in the damping coefficients. Electronic scattering processes are described and included in the dielectric function, showing their role in determining plasmon lifetime at resonance. Relationships among permittivity, electric conductivity and refractive index are examined. Finally, a temperature dependent permittivity model is presented and is employed to predict temperature and non-linear field intensity dependence on commonly used plasmonic geometries, such as nanospheres. 2013 by the authors; licensee MDPI, Basel, Switzerland.

Dielectric relaxation in glassy Se75In25− xPbx alloys

Indian Academy of Sciences (India)

In this paper we report the effect of Pb incorporation in the dielectric properties of a-Se75In25 glassy alloy. The temperature and frequency dependence of the dielectric constants and the dielectric losses in glassy Se75In25−Pb ( = 0, 5, 10 and 15) alloys in the frequency range (1 kHz–5 MHz) and temperature range ...

Frequency and temperature dependence of the electrical conductivity of KTaO3; Li and PbTiO3; La, Cu: Indication of a low temperature polaron mechanism

International Nuclear Information System (INIS)

Levstik, A.; Filipic, C.; Bidault, O.; Maglione, M.

2008-01-01

Recently, the concept of polarons has again been at the focus of solid-state research, as it can constitute the basis for understanding the high-temperature superconductivity or the colossal magnetoresistance of materials. More than a decade ago there were some indications that polarons play an important role in explaining low temperature maxima in imaginary part of the dielectric constant ε '' (T) in ABO 3 perovskites. In the present work we report the ac electrical conductivities of KTaO 3 ; Li and PbTiO 3 ; La, Cu and their frequency and temperature dependence. The real part of the complex ac conductivity was found to follow the universal dielectric response σ ' ∝ν s . A detailed theoretical analysis of the temperature dependence of the parameter s revealed that, at low temperatures, the tunnelling of small polarons is the dominating charge transport mechanism in ABO 3 perovskites

The electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures

Science.gov (United States)

Karabulut, Abdulkerim; Türüt, Abdulmecit; Karataş, Şükrü

2018-04-01

In this work, temperature dependent electrical and dielectric properties of the Au/Ti/HfO2/n-GaAs structures were investigated using capacitance-voltage (C-V) and conductance-voltage (G-V) measurements in the temperature range of 60-320 K by steps of 20 K at 1 MHz. The dielectric constant (ε‧), dielectric loss (ε″), dielectric loss tangent (tanδ) and ac electrical conductivities (σac) have been calculated as a function of temperature. These values of the ε‧, ε″, tanδ and σac have been found to be 2.272, 5.981, 2.631 and 3.32 × 10-6 (Ω-1cm-1) at 80 K, respectively, 1.779, 2.315, 1.301 and 1.28 × 10-6 (Ω-1cm-1), respectively at 320 K. These decrease of the dielectric parameters (ε‧, ε″, tanδ and σac) have been observed at high temperatures. The experimental results show that electrical and dielectric properties are strongly temperature and bias voltage dependent.

Dielectric relaxation in Li2SO4 in the intermedia-temperature regime

Science.gov (United States)

Diosa, J. E.; Vargas, R. A.; Fernández, M. E.; Albinsson, I.; Mellander, B.-E.

2005-08-01

The dielectric permittivity of polycrystalline Li2SO4 was measured from 5 Hz to 13 MHz and over the temperature range 235-460 °C. The corrected imaginary part of permittivity, , and its real part vs. frequency clearly show a new dielectric relaxation around fmax = 2 × 104 Hz at T = 256 °C, which shifts to higher frequencies (1 MHz) as the temperatures increases. The relaxation frequency (calculated from the peak position of ) vs. reciprocal T shows an activated relaxation process with activation energy Ea= 0.9 eV, which is very close to that derived from the dc conductivity, E (0.87 eV). We suggest that this dielectric relaxation could be due to the Li+ jump and SO4- reorientation that cause distortion and change of the local lattice polarizability inducing dipoles like LiSO4-.

Partial oxidation of methane in a temperature-controlled dielectric barrier discharge reactor

KAUST Repository

Zhang, Xuming; Cha, Min

2015-01-01

We studied the relative importance of the reduced field intensity and the background reaction temperature in the partial oxidation of methane in a temperature-controlled dielectric barrier discharge reactor. We obtained important mechanistic insight

Low-temperature phase transition in γ-glycine single crystal. Pyroelectric, piezoelectric, dielectric and elastic properties

Energy Technology Data Exchange (ETDEWEB)

Tylczyński, Zbigniew, E-mail: zbigtyl@amu.edu.pl [Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań (Poland); Busz, Piotr [Institute of Molecular Physics, Polish Academy of Science, Smoluchowskiego 17, 60-179 Poznań (Poland)

2016-11-01

Temperature changes in the pyroelectric, piezoelectric, elastic and dielectric properties of γ-glycine crystals were studied in the range 100 ÷ 385 K. The pyroelectric coefficient increases monotonically in this temperature range and its value at RT was compared with that of other crystals having glycine molecules. A big maximum in the d14 component of piezoelectric tensor compared by maximum in attenuation of the resonant face-shear mode were observed at 189 K. The components of the elastic stiffness tensor and other components of the piezoelectric tensor show anomalies at this temperature. The components of electromechanical coupling coefficient determined indicate that γ-glycine is a weak piezoelectric. The real and imaginary part of the dielectric constant measured in the direction perpendicular to the trigonal axis show the relaxation anomalies much before 198 K and the activation energies were calculated. These anomalies were interpreted as a result of changes in the NH{sub 3}{sup +} vibrations through electron-phonon coupling of the so called “dynamical transition”. The anomalies of dielectric constant ε*{sub 11} and piezoelectric tensor component d{sub 14} taking place at 335 K are associated with an increase in ac conductivity caused by charge transfer of protons. - Graphical abstract: Imaginary part of dielectric constant in [100] direction. - Highlights: • Piezoelectric, elastic and dielectric constants anomalies were discovered at 189 K. • These anomalies were interpreted as a result of so called “dynamical transition”. • Relaxational dielectric anomaly was explained by the dynamics of glycine molecules. • Pyroelectric coefficient of γ-glycine was determined in a wide temperature range. • Complex dielectric & piezoelectric anomalies at 335 K were caused by protons hopping.

Dielectric properties of KDP-type ferroelectric crystals in the ...

Indian Academy of Sciences (India)

Hamiltonian for KDP-type ferroelectrics, expressions for field-dependent shift, width, ... For the calculation, method of statistical double-time temperature- ... roelectric phase transition and dielectric behaviour of KDP and its isomorphs is .... The dissipation of power in dielectric material can conveniently be expressed as.

Microwave dielectric tangent losses in KDP and DKDP crystals

Indian Academy of Sciences (India)

By adding cubic and quartic phonon anharmonic interactions in the pseudospin lattice coupled mode (PLCM) model for KDP-type crystals and using double-time temperature dependent Green's function method, expressions for soft mode frequency, dielectric constant and dielectric tangent loss are obtained. Using model ...

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

Directory of Open Access Journals (Sweden)

Jaekyun Kim

2015-10-01

Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

Dielectric determination of the glass transition temperature (T sub g)

Science.gov (United States)

Ries, Heidi R.

1990-01-01

The objective is to determine the glass transition temperature of a polymer using a dielectric dissipation technique. A peak in the dissipation factor versus temperature curve is expected near the glass transition temperature T sub g. It should be noted that the glass transition is gradual rather than abrupt, so that the glass transition temperature T sub g is not clearly identifiable. In this case, the glass transition temperature is defined to be the temperature at the intersection point of the tangent lines to the dissipation factor versus temperature curve above and below the transition region, as illustrated.

Realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces

Energy Technology Data Exchange (ETDEWEB)

Ke, Yougang; Liu, Yachao; He, Yongli; Zhou, Junxiao; Luo, Hailu, E-mail: hailuluo@hnu.edu.cn; Wen, Shuangchun [Laboratory for Spin Photonics, School of Physics and Electronics, Hunan University, Changsha 410082 (China)

2015-07-27

We report the realization of spin-dependent splitting with arbitrary intensity patterns based on all-dielectric metasurfaces. Compared with the plasmonic metasurfaces, the all-dielectric metasurface exhibits more high transmission efficiency and conversion efficiency, which makes it possible to achieve the spin-dependent splitting with arbitrary intensity patterns. Our findings suggest a way for generation and manipulation of spin photons, and thereby offer the possibility of developing spin-based nanophotonic applications.

Conformation transitions of blood proteins under influence of physical factors on microwave dielectric method

International Nuclear Information System (INIS)

Gorobchenko, O.A.; Nikolov, O.T.; Gatash, S.V.

2006-01-01

In this article, the influence of γ-irradiation and temperature on albumin and fibrinogen conformation and dielectric properties of protein solutions have been studied by the microwave dielectric method. Both the values of the real part ε' (dielectric permittivity) and the imaginary part ε'' (dielectric losses) of the complex dielectric permittivity of the aqueous solution of bovine serum albumin and human fibrinogen as functions of temperature and γ-irradiation dose have been obtained. The time of dielectric relaxation of water molecules in the protein solutions was calculated. The hydration of the albumin and fibrinogen molecules was determined. The temperature dependencies of hydration are non-monotonous and have a number of characteristic features at the temperatures 30-34 and 44-47 deg. C for serum albumin, and 24 and 32 deg. C for fibrinogen

Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

Energy Technology Data Exchange (ETDEWEB)

Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon, E-mail: shohet@engr.wisc.edu [Plasma Processing and Technology Laboratory, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, Sean W.; Clarke, James S. [Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Yoshio [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2014-09-01

Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities.

Time-dependent dielectric breakdown measurements of porous organosilicate glass using mercury and solid metal probes

International Nuclear Information System (INIS)

Pei, Dongfei; Nichols, Michael T.; Shohet, J. Leon; King, Sean W.; Clarke, James S.; Nishi, Yoshio

2014-01-01

Time-dependent dielectric breakdown (TDDB) is one of the major concerns for low-k dielectric materials. During plasma processing, low-k dielectrics are subjected to vacuum ultraviolet photon radiation and charged-particle bombardment. To examine the change of TDDB properties, time-to-breakdown measurements are made to porous SiCOH before and after plasma exposure. Significant discrepancies between mercury and solid-metal probes are observed and have been shown to be attributed to mercury diffusion into the dielectric porosities

Low Temperature Broad Band Dielectric Spectroscopy of Multiferroic Bi6Fe2Ti3O18 Ceramics

Directory of Open Access Journals (Sweden)

Lisińska-Czekaj A.

2016-09-01

Full Text Available In the present research the tool of broadband dielectric spectroscopy was utilized to characterize dielectric behavior of Bi6Fe2Ti3O18 (BFTO Aurivillius-type multiferroic ceramics. Dielectric response of BFTO ceramics was studied in the frequency domain (Δν=0.1Hz – 10MHz within the temperature range ΔT=-100°C – 200°C. The Kramers-Kronig data validation test was employed to validate the impedance data measurements and it was found that the measured impedance data exhibited good quality justifying further analysis. The residuals were found to be less than 1%, whereas the “chi-square” parameter was within the range χ2~10−7−10−5. Experimental data were analyzed using the circle fit of simple impedance arc plotted in the complex Z”-Z’ plane (Nyquist plot. The total ac conductivity of the grain boundaries was thus revealed and the activation energy of ac conductivity for the grain boundaries was calculated. It was found that activation energy of ac conductivity of grain boundaries changes from EA=0.20eV to EA=0.55eV while temperature rises from T=-100°C up to T=200°C. On the base of maxima of the impedance semicircles (ωmτm=1 the relaxation phenomena were characterized in terms of the temperature dependence of relaxation times and relevant activation energy was calculated (EA=0.55eV.

Peltier Effect Based Temperature Controlled System for Dielectric Spectroscopy

Science.gov (United States)

Mukda, T.; Jantaratana, P.

2017-09-01

The temperature control system was designed and built for application in dielectric spectroscopy. It is based on the dual-stage Peltier element that decreases electrical power and no cryogenic fluids are required. A proportional integral derivative controller was used to keep the temperature stability of the system. A Pt100 temperature sensor was used to measure temperature of the sample mounting stage. Effect of vacuum isolation and water-cooling on accuracy and stability of the system were also studied. With the incorporation of vacuum isolation and water-cooling at 18 °C, the temperature of the sample under test can be controlled in the range of -40 °C to 150 °C with temperature stability ± 0.025 °C.

Investigation of dielectric properties of different cake formulations during microwave and infrared-microwave combination baking.

Science.gov (United States)

Sakiyan, Ozge; Sumnu, Gulum; Sahin, Serpil; Meda, Venkatesh

2007-05-01

Dielectric properties can be used to understand the behavior of food materials during microwave processing. Dielectric properties influence the level of interaction between food and high frequency electromagnetic energy. Dielectric properties are, therefore, important in the design of foods intended for microwave preparation. In this study, it was aimed to determine the variation of dielectric properties of different cake formulations during baking in microwave and infrared-microwave combination oven. In addition, the effects of formulation and temperature on dielectric properties of cake batter were examined. Dielectric constant and loss factor of cake samples were shown to be dependent on formulation, baking time, and temperature. The increase in baking time and temperature decreased dielectric constant and loss factor of all formulations. Fat content was shown to increase dielectric constant and loss factor of cakes.

Facile synthesis of graphene on dielectric surfaces using a two-temperature reactor CVD system

International Nuclear Information System (INIS)

Zhang, C; Man, B Y; Yang, C; Jiang, S Z; Liu, M; Chen, C S; Xu, S C; Sun, Z C; Gao, X G; Chen, X J

2013-01-01

Direct deposition of graphene on a dielectric substrate is demonstrated using a chemical vapor deposition system with a two-temperature reactor. The two-temperature reactor is utilized to offer sufficient, well-proportioned floating Cu atoms and to provide a temperature gradient for facile synthesis of graphene on dielectric surfaces. The evaporated Cu atoms catalyze the reaction in the presented method. C atoms and Cu atoms respectively act as the nuclei for forming graphene film in the low-temperature zone and the zones close to the high-temperature zones. A uniform and high-quality graphene film is formed in an atmosphere of sufficient and well-proportioned floating Cu atoms. Raman spectroscopy, scanning electron microscopy and atomic force microscopy confirm the presence of uniform and high-quality graphene. (paper)

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

Science.gov (United States)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

Magnetic and dielectric study of Fe-doped CdSe nanoparticles

Science.gov (United States)

Das, Sayantani; Banerjee, Sourish; Bandyopadhyay, Sudipta; Sinha, Tripurari Prasad

2018-01-01

Nanoparticles of cadmium selenide (CdSe) and Fe (5% and 10%) doped CdSe have been synthesized by soft chemical route and found to have cubic structure. The magnetic field dependent magnetization measurement of the doped samples indicates the presence of anti-ferromagnetic order. The temperature dependent magnetization (M-T) measurement under zero field cooled and field cooled conditions has also ruled out the presence of ferromagnetic component in the samples at room temperature as well as low temperature. In order to estimate the anti-ferromagnetic coupling among the doped Fe atoms, an M-T measurement at 500 Oe has been carried out, and the Curie-Weiss temperature θ of the samples has been estimated from the inverse of susceptibility versus temperature plots. The dielectric relaxation peaks are observed in the spectra of imaginary part of dielectric constant. The temperature dependent relaxation time is found to obey the Arrhenius law having activation energy 0.4 eV for Fe doped samples. The frequency dependent conductivity spectra are found to obey the power law. [Figure not available: see fulltext.

Non-linear dielectric signatures of entropy changes in liquids subject to time dependent electric fields

Energy Technology Data Exchange (ETDEWEB)

Richert, Ranko [School of Molecular Sciences, Arizona State University, Tempe, Arizona 85287-1604 (United States)

2016-03-21

A model of non-linear dielectric polarization is studied in which the field induced entropy change is the source of polarization dependent retardation time constants. Numerical solutions for the susceptibilities of the system are obtained for parameters that represent the dynamic and thermodynamic behavior of glycerol. The calculations for high amplitude sinusoidal fields show a significant enhancement of the steady state loss for frequencies below that of the low field loss peak. Also at relatively low frequencies, the third harmonic susceptibility spectrum shows a “hump,” i.e., a maximum, with an amplitude that increases with decreasing temperature. Both of these non-linear effects are consistent with experimental evidence. While such features have been used to conclude on a temperature dependent number of dynamically correlated particles, N{sub corr}, the present result demonstrates that the third harmonic susceptibility display a peak with an amplitude that tracks the variation of the activation energy in a model that does not involve dynamical correlations or spatial scales.

Development and characterization of high temperature, high energy density dielectric materials to establish routes towards power electronics capacitive devices

Science.gov (United States)

Shay, Dennis P.

-doped composition. The Ca(Ti0.795Mn 0.005Zr0.2)O3 composition was selected for single layer, Pt buried electrode capacitor prototyping to evaluate high temperature electrical characteristics. Polarization-field (P--E) hysteresis measurements of CTZ showed a large increase in dielectric loss with increasing temperature, limiting the dielectric breakdown strength and recoverable energy density. When doped with Mn, CTZ + Mn showed a minimization of the temperature dependence of the breakdown strength, and maximum energy densities of 7.00 J/cm 3 at a Eb of 1.1 MV/cm at room temperature and 5.36 J/cm3 at Eb = 1.0 MV/cm at 300 °C were observed. Impedance spectroscopy of the CTZ and CTZ + Mn dielectrics showed that doping with Mn resulted in a decrease in ionic conductivity and a subsequent decrease in electronic conductivity. Basic characterization of Ca(Ti0.8Hf0.2)O 3 (CTH) and Ca(Ti0.795Mn0.005Hf0.2)O 3 (CTH + Mn) showed similar characteristics compared to the CTZ system. High temperature impedance spectroscopy of CTH and CTH + Mn showed similar behavior to the CTZ and CTZ + Mn systems, but with overall decreases in ionic and electronic conductivity. Coupled with thermally stimulated depolarization current measurements (TSDC), oxygen vacancy migration and space charge conduction are dominant and could be minimized with Mn doping. To gain further insight into how aliovalent Mn controls high temperature conduction in the CTH + Mn system, capacitors were quenched from the sintering temperature and an impedance study was performed. It was observed that ionic conductivity was quenched in due to oxygen vacancies compensating Mn 3+, and interfacial features were observed in impedance spectra due to double back-to-back Schottky barriers (depletion layers). As capacitors were re-oxidized, bulk resistivity increased while interfacial resistivity decreased. The hypothesis was supported by the application of dc bias during impedance measurements, which showed similar impedance behavior to the re

Dielectric dispersion in pure and doped lithium rubidium sulphate

Science.gov (United States)

Kassem, M. E.; El-Muraikhi, M.; Al-Houty, L.; Mohamed, A. A.

The frequency (102 - 105 Hz) dependence of the dielectric properties of lithium rubidium sulphate (LRS) are reported in the vicinity of the transition temperature Tc = 477 K. The a.c. conductivity σ(ω) shows a strong temperature dependence and weak frequency response. The dielectric constant in this region shows a strong frequency dispersion. A Cole-Cole diagram was used to determine the distribution parameter and the molecular relaxation time. The effect of doping with Dy+3, Sm+3 and V+3, was also studied. It was found that doping gives rise to localized states which produce a disorder in the structure of LiRbSO4.

Studies on frequency dependent electrical and dielectric properties of sintered zinc oxide pellets: effects of Al-doping

Science.gov (United States)

Tewari, S.; Ghosh, A.; Bhattacharjee, A.

2016-11-01

Sintered pellets of zinc oxide (ZnO), both undoped and Al-doped are prepared through a chemical process. Dopant concentration of Aluminium in ZnO [Al/Zn in weight percentage (wt%)] is varied from 0 to 3 wt%. After synthesis structural characterisation of the samples are performed with XRD and SEM-EDAX which confirm that all the samples are of ZnO having polycrystalline nature with particle size from 108.6 to 116 nm. Frequency dependent properties like a.c. conductivity, capacitance, impedance and phase angle are measured in the frequency range 10 Hz to 100 kHz as a function of temperature (in the range 25-150 °C). Nature of a.c. conductivity in these samples indicates hopping type of conduction arising from localised defect states. The frequency and temperature dependent properties under study are found to be as per correlated barrier hoping model. Dielectric and impedance properties studied in the samples indicate distributed relaxation, showing decrease of relaxation time with temperature.

Ionic conductivity and dielectric permittivity of polymer electrolyte plasticized with polyethylene glycol

Science.gov (United States)

Das, S.; Ghosh, A.

2016-05-01

We have studied ionic conductivity and dielectric permittivity of PEO-LiClO4 solid polymer electrolyte plasticized with polyethylene glycol (PEG). The temperature dependence of the ionic conductivity has been well interpreted using Vogel-Tamman-Fulcher equation. The maximum dielectric constant is observed for 30 wt. % of PEG content. To get further insights into the ion dynamics, the complex dielectric permittivity has been studied with Havriliak-Negami function. The variation of relaxation time with inverse temperature obtained from HN formalism follows VTF nature.

Effect of Bi doping on morphotropic phase boundary and dielectric properties of PZT

Energy Technology Data Exchange (ETDEWEB)

Joshi, Shraddha; Acharya, Smita, E-mail: saha275@yahoo.com [Advanced Materials Research Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University, Nagpur-440033, M.S. India (India)

2016-05-23

In our present attempt, Pb{sub (1-x)}Bi{sub x}Zr{sub 0.52}Ti{sub 0.48}O{sub 3} [PBZT] {where x = 0, 0.05, 0.1} is synthesized by sol-gel route. Effect of Bi addition on structure, sinterability and dielectric properties are observed. The presence of morphotropic phase boundary (coexistence of tetragonal and rhombohedral symmetry) is confirmed by X-ray diffraction. Enhancement of sinterability after Bi doping is observed through a systematic sintering program. Frequency and temperature dependent dielectric constant are studied. Bi doping in PZT is found to enhance room temperature dielectric constant. However, at high temperature the dielectric constant of pure PZT is more than that of doped PZT.

Temperature dependence of conductivity in high mobility MIS structures on a base of (001) silicon

International Nuclear Information System (INIS)

Vyrodov, E.A.; Dolgopolov, V.T.; Dorozhkin, C.I.; Zhitenev, N.B.

1988-01-01

Measurements of the temperature dependence of the conductivity of two-dimensional electrons in silicon MIS structures were carried out. It is shown that the observed dependence is well described by the equation σ(T) = σ(0)(1-Q(kT var-epsilon F )-P(kT/var-epsilon F )3/2 + O[(kT/var-epsilon F ) 2 ]). The variation of the coefficient Q with the density N S of the two-dimensional electrons is determined, and it is shown that the observed trend of the Q(s) curve is described by consideration of the temperature dependence of the dielectric function of a two-dimensional electron gas

Thickness-Dependent Dielectric Constant of Few-Layer In 2 Se 3 Nanoflakes

KAUST Repository

Wu, Di

2015-11-17

© 2015 American Chemical Society. The dielectric constant or relative permittivity (εr) of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and screening in electronic devices. Such a fundamental material property is intimately related to not only the polarizability of individual atoms but also the specific atomic arrangement in the crystal lattice. In this Letter, we present both experimental and theoretical investigations on the dielectric constant of few-layer In2Se3 nanoflakes grown on mica substrates by van der Waals epitaxy. A nondestructive microwave impedance microscope is employed to simultaneously quantify the number of layers and local electrical properties. The measured εr increases monotonically as a function of the thickness and saturates to the bulk value at around 6-8 quintuple layers. The same trend of layer-dependent dielectric constant is also revealed by first-principles calculations. Our results of the dielectric response, being ubiquitously applicable to layered 2D semiconductors, are expected to be significant for this vibrant research field.

Study of dielectric liquids at room temperature for high energy x ray Tomography

International Nuclear Information System (INIS)

Lepert, S.

1989-09-01

The detection of X rays by means of a dielectric liquid detector system, at room temperature, is discussed. The physico-chemical properties of a dielectric liquid, the construction of a cleaning device and of two electrode configurations, and the utilization of different amplifier models are studied. The results allowed the analysis and characterization of the behavior of the dielectric liquid under X ray irradiation. Data obtained is confirmed by computerized simulation. The choice of Tetramethyl-germanium for the X ray tomography, applied in nondestructive analysis, is explained. The investigation of the system parameters allowed the setting of the basis of a prototype project for a multi-detector [fr

Dielectric behavior and ac electrical conductivity of nanocrystalline nickel aluminate

International Nuclear Information System (INIS)

Kurien, Siby; Mathew, Jose; Sebastian, Shajo; Potty, S.N.; George, K.C.

2006-01-01

Nanocrystalline nickel aluminate was prepared by chemical co-precipitation, and nanoparticles having different particle size were obtained by annealing the precursor at different temperatures. The TG/DTA measurements showed thermal decomposition was a three-step process with crystallisation of the spinel phase started at a temperature 420 deg. C. The X-ray diffraction analysis confirmed that the specimen began to crystallise on annealing above 420 deg. C and became almost crystalline at about 900 deg. C. The particle sizes were calculated from XRD. Dielectric properties of nickel aluminate were studied as a function of the frequency of the applied ac signal at different temperatures. It was seen the real dielectric constant ε', and dielectric loss tan δ decreased with frequency of applied field while the ac conductivity increased as the frequency of the applied field increased. The dielectric relaxation mechanism is explained by considering nanostructured NiAl 2 O 4 as a carrier-dominated dielectric with high density of hopping charge carriers. The variation of ε' with different particle size depends on several interfacial region parameters, which change with the average particle size

Ozone production in a dielectric barrier discharge with ultrasonic irradiation

DEFF Research Database (Denmark)

Drews, Joanna Maria; Kusano, Yukihiro; Leipold, Frank

2011-01-01

Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate and the ......Ozone production has been investigated using an atmospheric pressure dielectric barrier discharge in pure O2 at room temperature with and without ultrasonic irradiation. It was driven at a frequency of either 15 kHz or 40 kHz. The ozone production was highly dependent on the O2 flow rate...

Calculation of the Dielectric Constant as a Function of Temperature Close to the Smectic A-Smectic B Transition in B5 Using the Mean Field Model

Directory of Open Access Journals (Sweden)

Hamit Yurtseven

2012-01-01

Full Text Available The temperature dependence of the static dielectric constant ( is calculated close to the smectic A-smectic B ( transition ( = 71.3°C for the liquid crystal compound B5. By expanding the free energy in terms of the order parameter in the mean field theory, the expression for the dielectric susceptibility (dielectric constant is derived and is fitted to the experimental data for which was obtained at the field strengths of 0 and 67 kV/cm from literature. Coefficients in the free energy expansion are determined from our fit for the transition of B5. Our results show that the observed behaviour of the dielectric constant close to the transition in B5 can be described satisfactorily by our mean field model.

Influence of Magnetite Nanoparticles on the Dielectric Properties of Metal Oxide/Polymer Nanocomposites Based on Polypropylene

Science.gov (United States)

Maharramov, A. A.; Ramazanov, M. A.; Di Palma, Luca; Shirinova, H. A.; Hajiyeva, F. V.

2018-01-01

Structure and dielectric properties of polymer nanocomposites based on isotactic polypropylene and iron oxide (Fe3O4) nanoparticles are studied. Distribution of magnetite nanoparticles in a polymer matrix was studied by scanning electron microscopy (SEM, Carl Zeiss). Dielectric properties of nanocomposites were examined by means of E7-21 impedance spectrometer in the frequency range of 102-106 Hz and temperature interval of 298-433 K. The frequency and temperature dependences of the dielectric permittivity ɛ, as well as the temperature dependence of log (ρ) were constructed. It is shown that introduction of the magnetite (Fe3O4) nanoparticles into a polypropylene matrix increases the dielectric permittivity of nanocomposites. An increase in the dielectric permittivity is explained by the increase in the polarization ability of nanocomposites. It is found that a decrease in the specific resistance with increasing temperature up to 318 K is associated with an increase in the ionic conductivity of nanocomposites. An increase in the resistance at temperatures higher than 358 K is due to the destruction of the crystalline phase of the polymer, as a result of which the distance between the Fe3O4 nanoparticles increases.

Temperature dependence of the dielectric tensor of monoclinic Ga2O3 single crystals in the spectral range 1.0-8.5 eV

Science.gov (United States)

Sturm, C.; Schmidt-Grund, R.; Zviagin, V.; Grundmann, M.

2017-08-01

The full dielectric tensor of monoclinic Ga2O3 (β-phase) was determined by generalized spectroscopic ellipsometry in the spectral range from 1.0 eV up to 8.5 eV and temperatures in the range from 10 K up to 300 K. By using the oriented dipole approach, the energies and broadenings of the excitonic transitions are determined as a function of the temperature, and the exciton-phonon coupling properties are deduced.

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

OpenAIRE

Lin, Yu-Hsien; Chou, Jay-Chi

2014-01-01

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

Study of dielectric relaxation and AC conductivity of InP:S single crystal

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.; El-Shazly, E. A.

2012-07-01

The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 × 105 Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (ɛ1) and the dielectric loss (ɛ2) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (σAC) was found to obey the power law: Aωs. Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that σAC is a thermally activated process.

Dielectric resonance in ErFeO3 in the region of spin reorientation

International Nuclear Information System (INIS)

Dan'shin, N.K.; Kovtun, N.M.; Sdvizhkov, M.A.

1984-01-01

In the region of spin reorientation in ErFeO 3 in the millimetre wave range a dielectric resonance has been found - excitation of electromaqnetic field natural oscillations in spherical samples. The fregurncies of dielectric resonance in samples from ErFeO 3 possess strong independence of temperature and magnetic field in the vicinity of the spin reorientation for account of a strong growth in the magnetic susceptibility. The frequencies change most considerably in the region of low-temperature spin reorientation related to antiferromagnetic rare earth ordering. Strong anisotropy of magnetic susceptibility cases various temperature and field dependences of the dielectric resonance frequencies at different orientations of the exciting electromagnetic field relative to the crystal axes. It is shown that the method of dielectric resonance permits to determine with high accuracy the temperatures of spontaneous - and crystal fields of induced phase transformations. The crystal dielectric permittivity and magnetic permeability dispersion are determined

Electronic polarizability of light crude oil from optical and dielectric studies

Science.gov (United States)

George, A. K.; Singh, R. N.

2017-07-01

In the present paper we report the temperature dependence of density, refractive indices and dielectric constant of three samples of crude oils. The API gravity number estimated from the temperature dependent density studies revealed that the three samples fall in the category of light oil. The measured data of refractive index and the density are used to evaluate the polarizability of these fluids. Molar refractive index and the molar volume are evaluated through Lorentz-Lorenz equation. The function of the refractive index, FRI , divided by the mass density ρ, is a constant approximately equal to one-third and is invariant with temperature for all the samples. The measured values of the dielectric constant decrease linearly with increasing temperature for all the samples. The dielectric constant estimated from the refractive index measurements using Lorentz-Lorentz equation agrees well with the measured values. The results are promising since all the three measured properties complement each other and offer a simple and reliable method for estimating crude oil properties, in the absence of sufficient data.

Dielectric and polarization behaviour of cellulose electro-active paper (EAPap)

International Nuclear Information System (INIS)

Yun, Gyu-Young; Kim, Joo-Hyung; Kim, Jaehwan

2009-01-01

Dielectric and polarization behaviour of electro-active paper (EAPap) were studied to understand the detailed material behaviour of EAPap as a novel smart material. It was revealed that the dielectric constant of EAPap was temperature and frequency dependent. The largest change in the dielectric constant was observed near 0 0 C while the highest dielectric constant was obtained at around 100 0 C, which might be related to the dipolar behaviour of the hydroxyl structure of cellulose and adsorbed or existing internal water molecules in cellulose EAPap. By thermal stimulated current measurement for polarization behaviour of cellulose EAPap, it was shown that the maximum current was observed in the temperature range 105-110 0 C. Compared with the polarization behaviour in the low temperature range, abnormal polarization was observed under an applied field mainly due to the trapped space charge in EAPap, which indicates that cellulose EAPap has a similar material behaviour to that of electret polymers. (fast track communication)

Studies on dielectric properties of ferrocenylhydrazone coordinated polymers irradiated by γ-rays

International Nuclear Information System (INIS)

Lin Yun; Chen Jie; Lin Zhanru

2007-01-01

The three ferrocenylhydrazone coordinated metal polymers were synthesized (PZM). The effect of the 60 Co γ irradiation on microwave dielectric properties and their temperature-dielectric properties were studies. It has been found that the dielectric parameters (ε', tgδ) of coordinated polymers increase along with the absorbed doses and coordinated metals in order Cu, Co, Ni, However, the dependent curves of dielectric parameters on arise-down temperature are universal. On the other hand, the small changes in chemical structure before and after irradiation were confirmed by IR differential spectrometry and SEM. It is possible to make such coordinated polymers as a multifunctional polymeric material with optical, electric and magnetic properties, which may be potentially used in microwave communication. (authors)

Temperature dependence of the work function of ruthenium-based gate electrodes

International Nuclear Information System (INIS)

Alshareef, H.N.; Wen, H.C.; Luan, H.F.; Choi, K.; Harris, H.R.; Senzaki, Y.; Majhi, P.; Lee, B.H.; Foran, B.; Lian, G.

2006-01-01

The effect of device fabrication temperature on the work function of ruthenium (Ru) metal gate and its bilayers was investigated. The work function shows strong temperature dependence when Ru electrodes are deposited on silicon oxide, SiO 2 , but not on hafnium silicates (HfSiO x ). Specifically, the work function of Ru on SiO 2 increased from 4.5 eV at 500 deg. C to 5.0 eV at 700 deg. C. On further annealing to 900 deg. C or higher, the work function dropped to about 4.4 eV. In the case of HfSiO x , the work function of Ru changed by less than 100 mV over the same temperature range. Identical temperature dependence was observed using hafnium (Hf)/Ru and tantalum (Ta)/Ru bilayers. However, the peak values of the work function decreased with increasing Hf/Ru and Ta/Ru thickness ratios. Materials analysis suggests that these trends are driven by interactions at the Ru metal gate-dielectric interface

Dielectric properties of (K0.5Na0.5)NbO3-(Bi0.5Li0.5)ZrO3 lead-free ceramics as high-temperature ceramic capacitors

Science.gov (United States)

Yan, Tianxiang; Han, Feifei; Ren, Shaokai; Ma, Xing; Fang, Liang; Liu, Laijun; Kuang, Xiaojun; Elouadi, Brahim

2018-04-01

(1 - x)K0.5Na0.5NbO3- x(Bi0.5Li0.5)ZrO3 (labeled as (1 - x)KNN- xBLZ) lead-free ceramics were fabricated by a solid-state reaction method. A research was conducted on the effects of BLZ content on structure, dielectric properties and relaxation behavior of KNN ceramics. By combining the X-ray diffraction patterns with the temperature dependence of dielectric properties, an orthorhombic-tetragonal phase coexistence was identified for x = 0.03, a tetragonal phase was determined for x = 0.05, and a single rhombohedral structure occurred at x = 0.08. The 0.92KNN-0.08BLZ ceramic exhibits a high and stable permittivity ( 1317, ± 15% variation) from 55 to 445 °C and low dielectric loss (≤ 6%) from 120 to 400 °C, which is hugely attractive for high-temperature capacitors. Activation energies of both high-temperature dielectric relaxation and dc conductivity first increase and then decline with the increase of BLZ, which might be attributed to the lattice distortion and concentration of oxygen vacancies.

High temperature dielectric properties of (BxNyOz thin films deposited using ion source assisted physical vapor deposition

Directory of Open Access Journals (Sweden)

N. Badi

2015-12-01

Full Text Available The dielectric integrity has been one of the major obstacle in bringing out capacitor devices with suitable performance characteristics at high temperatures. In this paper, BxNyOz dielectric films for high temperature capacitors solutions are investigated. The films were grown on silicon substrate by using ion source assisted physical vapor deposition technique. The as-grown films were characterized by SEM, XRD, and XPS. The capacitor structures were fabricated using BxNyOz as a dielectric and titanium as metal electrodes. The elaborated devices were subjected to electrical and thermal characterization. They exhibited low electrical loss and very good stability when subjected to high temperature for a prolonged period of time.

Structural, dielectric and magnetic studies of magnetoelectric trirutile Fe{sub 2}TeO{sub 6}

Energy Technology Data Exchange (ETDEWEB)

Kaushik, S. D., E-mail: sdkaushik@csr.res.in [UGC-DAE-Consortium for Scientific Research Mumbai Centre, R-5 Shed, BARC, Mumbai-400085 (India); Sahu, B.; Mohapatra, S. R.; Singh, A. K. [Department of Physics and Astronomy, National Institute of Technology, Rourkela-769008, Odisha (India)

2016-05-23

We have investigated structural, magnetic and dielectric properties of Fe{sub 2}TeO{sub 6} which is a magnetoelectric antiferromagnet with the trirutile lattice. Rietveld analysis of room temperature X-ray diffraction data shows the phase purity of the sample with tetragonal trirutile structure (space group P4{sub 2}/mnm). The DC susceptibility measurement performed on polycrystalline powders exhibits antiferromagnetic ordering below transition temperature ~ 210K. The employment of Curie-Weiss law to inverse magnetic susceptibility only in the temperature range 350-260 K indicates the magnetic ordering starts developing before the transition temperature. The temperature dependent dielectric measurements show an intrinsic behavior of dielectric constant below 150 K while a continuous increase in dielectric constant with temperature above 150 K may be attributed to a small increase in electrical conduction, known commonly in the literatures.

Structural, optical and dielectric properties of graphene oxide

Science.gov (United States)

Bhargava, Richa; Khan, Shakeel

2018-05-01

The Modified Hummers method has been used to synthesize Graphene oxide nanoparticles. Microstructural analyses were carried out by X-ray diffraction and Fourier transform infrared spectroscopy. Optical properties were studied by UV-visible spectroscopy in the range of 200-700 nm. The energy band gap was calculated with the help of Tauc relation. The frequency dependence of dielectric constant and dielectric loss were studied over a range of the frequency 75Hz to 5MHz at room temperature. The dispersion in dielectric constant can be explained with the help of Maxwell-Wagner model in studied nanoparticles.

Effect of Dielectric Properties of a Solvent-Water Mixture Used in Microwave-Assisted Extraction of Antioxidants from Potato Peels

Directory of Open Access Journals (Sweden)

Ashutosh Singh

2014-02-01

Full Text Available The dielectric properties of a methanol-water mixture were measured at different temperatures from 20 to 80 °C at two frequencies 915 MHz and 2450 MHz. These frequencies are most commonly used on industrial and domestic scales respectively. In this study, the dielectric properties of a methanol-water mixture were found to be dependent on temperature, solvent concentration, and presence of plant matrix. Linear and quadratic equations were developed to establish the dependency between factors. At 2450 MHz, the dielectric constant of methanol-water mixtures was significantly affected by concentration of methanol rather than by temperature, whereas the dielectric loss factor was significantly affected by temperature rather than by methanol concentration. Introduction of potato peel led to an increase in the effect of temperature on the dielectric properties of the methanol fractions. At 915 MHz, both the dielectric properties were significantly affected by the increase in temperature and solvent concentration, while the presence of potato peel had no significant effect on the dielectric properties. Statistical analysis of the dissipation factor at 915 and 2450 MHz revealed that both temperature and solvent concentration had a significant effect on it, whereas introduction of potato peels at 915 MHz reduced the effect of temperature as compared to 2450 MHz. The total phenolic yield of the microwave-assisted extraction process was significantly affected by the solvent concentration, the dissipation factor of the methanol-water mixture and the extraction time.

Incubation temperature and hemoglobin dielectric of chicken embryos incubated under the influence of electric field.

Science.gov (United States)

Shafey, T M; Al-Batshan, H A; Shalaby, M I; Ghannam, M M

2006-01-01

Eggs from a layer-type breeder flock (Baladi, King Saud University) between 61 and 63 weeks of age were used in 3 trials to study the effects of electric field (EF) during incubation on the internal temperature of incubation, and eggs and hemoglobin (Hb) dielectric of chicken embryos at 18 days of age. Dielectric relative permittivity (epsilon') and conductivity (sigma) of Hb were examined in the range of frequency from 20 to 100 kHz. The values of dielectric increment (Deltaepsilon') and the relaxation times (tau) of Hb molecules were calculated. The internal temperature of eggs was measured in empty (following the removal of egg contents) and fertilized eggs in trials 1 and 2, respectively. The level of the EF was 30 kV/m, 60 Hz. EF incubation of embryos influenced the temperature of incubation and electrical properties of Hb molecules and did not influence the temperature of incubation and internal environment of eggs when empty eggs were incubated. EF incubation of fertilized eggs significantly raised the temperature of incubation, egg air cell, and at the surface of the egg yolk by approximately 0.09, 0.60, and 0.61 degrees F, respectively and Hb epsilon', sigma, Deltaepsilon', and tau as a function of the range of frequency of 20 to 100 kHz when compared with their counterparts of the control group. It was concluded that the exposure of fertilized chicken eggs to EF of 30 kV/m, 60 Hz, during incubation altered dielectric properties of Hb and that probably affected cell to cell communication and created the right environment for enhancing the growing process and heat production of embryos consequently increasing the temperature of the internal environment of the egg, and incubation.

Dielectric Constant Measurements of Solid 4He

Science.gov (United States)

Yin, L.; Xia, J. S.; Huan, C.; Sullivan, N. S.; Chan, M. H. W.

2011-03-01

Careful measurements of the dielectric properties of solid 4He have been carried out down to 35 mK, considerably lower than the temperature range of previous studies. The sample was prepared from high purity gas with 3He concentrations of the order of 200 ppb and were formed by the blocked capillary method. The molar volume of the sample was 20.30 cm3. The dielectric constant of the samples was found to be independent of temperature down to 120 mK before showing a continuous increase with decreasing temperature and saturating below 50 mK. The total increase in ɛ is 2 parts in 10-5. The temperature dependence of ɛ mimics the increase in the resonant frequency found in the torsional oscillator studies and also the increase found in the shear modulus measurements.

Correlation of shear and dielectric ion viscosity of dental resins - Influence of composition, temperature and filler content.

Science.gov (United States)

Steinhaus, Johannes; Hausnerova, Berenika; Haenel, Thomas; Selig, Daniela; Duvenbeck, Fabian; Moeginger, Bernhard

2016-07-01

Shear viscosity and ion viscosity of uncured visible light-curing (VLC) resins and resin based composites (RBC) are correlated with respect to the resin composition, temperature and filler content to check where Dielectric Analysis (DEA) investigations of VLC RBC generate similar results as viscosity measurements. Mixtures of bisphenol A glycidyl methacrylate (Bis-GMA) and triethylene glycol dimethacrylate (TEGDMA) as well as the pure resins were investigated and compared with two commercial VLC dental resins and RBCs (VOCO, Arabesk Top and Grandio). Shear viscosity data was obtained using a Haake Mars III, Thermo Scientific. Ion viscosity measurements performed by a dielectric cure analyzer (DEA 231/1 Epsilon with Mini IDEX-Sensor, Netzsch-Gerätebau). Shear viscosity depends reciprocally on the mobility of molecules, whereas the ion viscosity also depends on the ion concentration as it is affected by both ion concentration and mixture viscosity. Except of pure TEGDMA, shear and ion viscosities depend on the resin composition qualitatively in a similar manner. Furthermore, shear and ion viscosities of the commercial VLC dental resins and composites exhibited the same temperature dependency regardless of filler content. Application of typical rheological models (Kitano and Quemada) revealed that ion viscosity measurements can be described with respect to filler contents of up to 30vol.%. Rheological behavior of a VLC RBC can be characterized by DEA under the condition that the ion concentration is kept constant. Both methods address the same physical phenomenon - motion of molecules. The proposed relations allows for calculating the viscosity of any Bis-GMA-TEGDMA mixture on the base of the viscosities of the pure components. This study demonstrated the applicability of DEA investigations of VLC RBCs with respect to quality assurance purposes. Copyright © 2016 The Academy of Dental Materials. Published by Elsevier Ltd. All rights reserved.

Frequency and temperature dependence behaviour of impedance, modulus and conductivity of BaBi4Ti4O15 Aurivillius ceramic

Directory of Open Access Journals (Sweden)

Tanmaya Badapanda

2014-09-01

Full Text Available In this work, we report the dielectric, impedance, modulus and conductivity study of BaBi4Ti4O15 ceramic synthesized by solid state reaction. X-ray diffraction (XRD pattern showed orthorhombic structure with space group A21am confirming it to be an m = 4 member of the Aurivillius oxide. The frequency dependence dielectric study shows that the value of dielectric constant is high at lower frequencies and decreases with increase in frequency. Impedance spectroscopy analyses reveal a non-Debye relaxation phenomenon since relaxation frequency moves towards the positive side with increase in temperature. The shift in impedance peaks towards higher frequency side indicates conduction in material and favouring of the long rangemotion of mobile charge carriers. The Nyquist plot from complex impedance spectrum shows only one semicircular arc representing the grain effect in the electrical conduction. The modulus mechanism indicates the non-Debye type of conductivity relaxation in the material, which is supported by impedance data. Relaxation times extracted using imaginary part of complex impedance (Z′′ and modulus (M′′ were also found to follow Arrhenius law. The frequency dependent AC conductivity at different temperatures indicates that the conduction process is thermally activated. The variation of DC conductivity exhibits a negative temperature coefficient of resistance behaviour.

Process and Microstructure to Achieve Ultra-high Dielectric Constant in Ceramic-Polymer Composites

Science.gov (United States)

Zhang, Lin; Shan, Xiaobing; Bass, Patrick; Tong, Yang; Rolin, Terry D.; Hill, Curtis W.; Brewer, Jeffrey C.; Tucker, Dennis S.; Cheng, Z.-Y.

2016-01-01

Influences of process conditions on microstructure and dielectric properties of ceramic-polymer composites are systematically studied using CaCu3Ti4O12 (CCTO) as filler and P(VDF-TrFE) 55/45 mol.% copolymer as the matrix by combining solution-cast and hot-pressing processes. It is found that the dielectric constant of the composites can be significantly enhanced–up to about 10 times – by using proper processing conditions. The dielectric constant of the composites can reach more than 1,000 over a wide temperature range with a low loss (tan δ ~ 10−1). It is concluded that besides the dense structure of composites, the uniform distribution of the CCTO particles in the matrix plays a key role on the dielectric enhancement. Due to the influence of the CCTO on the microstructure of the polymer matrix, the composites exhibit a weaker temperature dependence of the dielectric constant than the polymer matrix. Based on the results, it is also found that the loss of the composites at low temperatures, including room temperature, is determined by the real dielectric relaxation processes including the relaxation process induced by the mixing. PMID:27767184

Effect of annealing temperature on structural, morphology and dielectric properties of La0.75Ba0.25FeO3 perovskite

Science.gov (United States)

Abdallah, F. B.; Benali, A.; Triki, M.; Dhahri, E.; Graça, M. P. F.; Valente, M. A.

2018-05-01

The effect of annealing temperature on the structure, morphology and dielectric properties of La0.75Ba0.25FeO3 compound prepared by the sol-gel method was investigated. The increase of the annealing temperature from 900 to 1100 °C, promotes an increase of the average grain size value. Two dielectric relaxations are detected using the dielectric modulus formalism, attributed to grain and grain boundary relaxations. This behavior was confirmed by both Nyquist and Argand's plots of dielectric impedance and Modulus results at different measuring temperatures. The ac conductivity could be described by Jonscher's power law revealing the presence of both overlapping large polaron tunneling and non-overlapping small polaron tunneling mechanisms.

Structural, dielectric and AC conductivity study of Sb2O3 thin film ...

Indian Academy of Sciences (India)

52

However, to date, no reports have appeared on impedance spectroscopy, modulus behavior, electrical conductivity, dielectric relaxation and dielectric properties of crystalline Sb2O3 thin films. This paper deals for the first time with the frequency and temperature dependence of AC conductivity and complex electric modulus ...

Conductivity and dielectric behaviour of indium substituted zinc ferrites prepared by coprecipitation method

International Nuclear Information System (INIS)

Cvejić, Željka; Rakić, Srđan; Jankov, Stevan; Skuban, Sonja; Rapajić, Sanja; Srdić, Vladimir V

2015-01-01

This paper presents the results concerning dielectric behavior and conductivity of the nanosized Zn 1−x In x Fe 2 O 4 powders (x = 0, 0.15, 0.2, and 0.3), obtained by coprecipitation method. The frequency dependence of dielectric permittivity and conductivity of the samples is determined in the frequency range of 1–10 5 Hz, at temperatures from 300–350 K, while the temperature dependence of conductivity was recorded at 100 Hz, 10 kHz and 100 kHz. The ac conductivity was found to follow universal dielectric response, which is typical for charge transport by hopping or tunneling processes. Analyzing the variation of the parameter n (as a measure of the degree of correlation between conductivity and frequency), with the temperatures we discuss the possible conduction mechanism in investigated samples. Qualitatively, non-overlapping small polarons (NSPT) are usually associated with increase in n with increasing temperature, while correlated barrier hopping (CBH) shows a decrease in n with increasing T. (paper)

Dielectric and ferroelectric sensing based on molecular recognition in Cu(1,10-phenlothroline)2SeO4.(diol) systems

Science.gov (United States)

Ye, Heng-Yun; Liao, Wei-Qiang; Zhou, Qionghua; Zhang, Yi; Wang, Jinlan; You, Yu-Meng; Wang, Jin-Yun; Chen, Zhong-Ning; Li, Peng-Fei; Fu, Da-Wei; Huang, Songping D.; Xiong, Ren-Gen

2017-02-01

The process of molecular recognition is the assembly of two or more molecules through weak interactions. Information in the process of molecular recognition can be transmitted to us via physical signals, which may find applications in sensing and switching. The conventional signals are mainly limited to light signal. Here, we describe the recognition of diols with Cu(1,10-phenlothroline)2SeO4 and the transduction of discrete recognition events into dielectric and/or ferroelectric signals. We observe that systems of Cu(1,10-phenlothroline)2SeO4.(diol) exhibit significant dielectric and/or ferroelectric dependence on different diol molecules. The compounds including ethane-1,2-diol or propane-1,2-diol just show small temperature-dependent dielectric anomalies and no reversible polarization, while the compound including ethane-1,3-diol shows giant temperature-dependent dielectric anomalies as well as ferroelectric reversible spontaneous polarization. This finding shows that dielectricity and/or ferroelectricity has the potential to be used for signalling molecular recognition.

Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

Science.gov (United States)

Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

2009-08-01

Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

Dielectric and impedance study of praseodymium substituted Mg-based spinel ferrites

Energy Technology Data Exchange (ETDEWEB)

Farid, Hafiz Muhammad Tahir, E-mail: tahirfaridbzu@gmail.com [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ahmad, Ishtiaq; Ali, Irshad [Department of Physics, Bahauddin Zakariya, University Multan, 60800 (Pakistan); Ramay, Shahid M. [College of Science, Physics and Astronomy Department, King Saud University, P.O. Box 2455, 11451 Riyadh (Saudi Arabia); Mahmood, Asif [Chemical Engineering Department, College of Engineering, King Saud University, Riyadh (Saudi Arabia); Murtaza, G. [Centre for Advanced Studies in Physics, GC University, Lahore 5400 (Pakistan)

2017-07-15

Highlights: • Magnesium based spinel ferrites were successfully synthesized by sol-gel method. • Dielectric constant shows the normal spinel ferrites behavior. • The dc conductivity are found to decrease with increasing temperature. • The samples with low conductivity have high values of activation energy. • The Impedance decreases with increasing frequency of applied field. - Abstract: Spinel ferrites with nominal composition MgPr{sub y}Fe{sub 2−y}O{sub 4} (y = 0.00, 0.025, 0.05, 0.075, 0.10) were prepared by sol-gel method. Temperature dependent DC electrical conductivity and drift mobility were found in good agreement with each other, reflecting semiconducting behavior. The dielectric properties of all the samples as a function of frequency (1 MHz–3 GHz) were measured at room temperature. The dielectric constant and complex dielectric constant of these samples decreased with the increase of praseodymium concentration. In the present spinel ferrite, Cole–Cole plots were used to separate the grain and grain boundary’s effects. The substitution of praseodymium ions in Mg-based spinel ferrites leads to a remarkable rise of grain boundary’s resistance as compared to the grain’s resistance. As both AC conductivity and Cole–Cole plots are the functions of concentration, they reveal the dominant contribution of grain boundaries in the conduction mechanism. AC activation energy was lower than dc activation energy. Temperature dependence normalized AC susceptibility of spinel ferrites reveals that MgFe{sub 2}O{sub 4} exhibits multi domain (MD) structure with high Curie temperature while on substitution of praseodymium, MD to SD transitions occurs. The low values of conductivity and low dielectric loss make these materials best candidate for high frequency application.

Ba doped Fe3O4 nanocrystals: Magnetic field and temperature tuning dielectric and electrical transport

Science.gov (United States)

Dutta, Papia; Mandal, S. K.; Nath, A.

2018-05-01

Nanocrystalline BaFe2O4 has been prepared through low temperature pyrophoric reaction method. The structural, dielectric and electrical transport properties of BaFe2O4 are investigated in detail. AC electrical properties have been studied over the wide range of frequencies with applied dc magnetic fields and temperatures. The value of impedance is found to increase with increase in magnetic field attributing the magnetostriction property of the sample. The observed value of magneto-impedance and magnetodielectric is found to ∼32% and ∼33% at room temperature. Nyquist plots have been fitted using resistance-capacitor circuits at different magnetic fields and temperatures showing the dominant role of grain and grain boundaries of the sample. Metal-semiconductor transition ∼403 K has been discussed in terms of delocalized and localized charge carrier.We have estimated activation energy using Arrhenius relation indicating temperature dependent electrical relaxation process in the system. Ac conductivity follow a Jonscher’s single power law indicating the large and small polaronic hopping conduction mechanism in the system.

The temperature dependences of electromechanical properties of PLZT ceramics

Science.gov (United States)

Czerwiec, M.; Zachariasz, R.; Ilczuk, J.

2008-02-01

The mechanical and electrical properties in lanthanum modified lead zirconate-titanate ceramics of 5/50/50 and 10/50/50 were studied by mechanical loss Q - 1, Young's modulus E, electric permittivity ɛ and tangent of dielectric loss of angle tgδ measurements. The internal friction Q - 1 and Young modulus E measured from 290 K to 600 K shows that Curie temperature TC is located at 574 K and 435 K (1st cycle of heating) respectively for ceramic samples 5/50/50 and 10/50/50. The movement of TC in second cycle of heating to lower temperature (561 K for 5/50/50 and 420 K for 10/50/50) has been observed. Together with Q - 1 and E measurements, temperature dependences of ɛ=f(T) and tgδ=f(T) were determinated in temperature range from 300 K to 730 K. The values of TC obtained during ɛ and tgδ measurements were respectively: 560 K for 5/50/50 and 419 K for 10/50/50. These temperatures are almost as high as the temperatures obtained by internal friction Q - 1 measurements in second cycle of heating. In ceramic sample 10/50/50 the additional maximum on internal friction Q - 1 curve at the temperature 316 K was observed.

Identification of microscopic domain wall motion from temperature dependence of nonlinear dielectric response.

Czech Academy of Sciences Publication Activity Database

Mokrý, Pavel; Sluka, T.

2017-01-01

Roč. 110, č. 16 (2017), č. článku 162906. ISSN 0003-6951 R&D Projects: GA ČR(CZ) GA14-32228S Institutional support: RVO:61389021 Keywords : microscopic domain wall * electric fields * temperature dependence Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering OBOR OECD: Electrical and electronic engineering Impact factor: 3.411, year: 2016 http://dx.doi.org/10.1063/1.4981874

Dielectric and thermophysical properties of different beef meat blends over a temperature range of -18 to +10°C.

Science.gov (United States)

Farag, K W; Lyng, J G; Morgan, D J; Cronin, D A

2008-08-01

Dielectric and thermophysical properties of three different beef meat blends (lean, fat and 50:50 mixture) were evaluated over a range of temperatures from -18 to +10°C. In the region of thawing (-3 to -1°C), dielectric constant (ε') and dielectric loss factor (ε') values for radio frequency (RF) and microwave (MW) were significantly higher (Pproperties of the beef meat blends, with a general tendency towards higher values at the RF frequency. Finally, composition significantly influenced (Pthermophysical properties at all temperatures used. These data are of potential value to food technologists in the context of rapid defrosting of meat products.

ac conductivity and dielectric properties of amorphous Se80Te20-xGex chalcogenide glass film compositions

International Nuclear Information System (INIS)

Hegab, N.A.; Afifi, M.A.; Atyia, H.E.; Farid, A.S.

2009-01-01

Thin films of the prepared Se 80 Te 20-x Ge x (x = 5, 7 and 10 at.%) were prepared by thermal evaporation technique. X-ray diffraction patterns showed that the films were in amorphous state. The ac conductivity and dielectric properties of the investigated film compositions were studied in the frequency range 0.1-100 kHz and in temperature range (303-373 K). The experimental results indicated that the ac conductivity and the dielectric properties depended on the temperature and frequency. The ac conductivity is found to obey the ω s law, in accordance with the hopping model, s is found to be temperature dependent (s 1 and dielectric loss ε 2 were found to decrease with frequency and increase with temperature. The maximum barrier height W m , calculated from dielectric measurements according to Guintini equation, agrees with that proposed by the theory of hopping over potential barrier as suggested by Elliott in case of chalcogenide glasses. The density of localized states was estimated for the studied film compositions. The variation of the studied properties with Ge content was also investigated.

Thermal Experimental Analysis for Dielectric Characterization of High Density Polyethylene Nanocomposites

Directory of Open Access Journals (Sweden)

Ahmed Thabet Mohamed

2016-01-01

Full Text Available The importance of nanoparticles in controlling physical properties of polymeric nanocomposite materials leads us to study effects of these nanoparticles on electric and dielectric properties of polymers in industry In this research, the dielectric behaviour of High-Density Polyethylene (HDPE nanocomposites materials that filled with nanoparticles of clay or fumed silica has been investigated at various frequencies (10 Hz-1 kHz and temperatures (20-60°C. Dielectric spectroscopy has been used to characterize ionic conduction, then, the effects of nanoparticles concentration on the dielectric losses and capacitive charge of the new nanocomposites can be stated. Capacitive charge and loss tangent in high density polyethylene nanocomposites are measured by dielectric spectroscopy. Different dielectric behaviour has been observed depending on type and concentration of nanoparticles under variant thermal conditions.

Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields

International Nuclear Information System (INIS)

Galiyarova, N.M.; Gorin, S.V.; Dontsova, L.I.; Shil'nikov, A.V.; Shuvalov, L.A.; AN SSSR, Moscow

1992-01-01

Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V·cm -1 amplitude within 0.25-10 4 Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase

Structural, dielectric and magnetic properties of NiFe{sub 2}O{sub 4} prepared via sol–gel auto-combustion method

Energy Technology Data Exchange (ETDEWEB)

Sun, Li, E-mail: sunlitut@163.com [Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024 (China); College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Zhang, Ru; Wang, Zhenduo [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China); Ju, Lin [College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000 (China); Cao, Ensi; Zhang, Yongjia [College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024 (China)

2017-01-01

Nickelferrite (NiFe{sub 2}O{sub 4})powders were synthesized via sol–gel auto-combustion method and the corresponding temperature dependence of microstructure, dielectric and magnetic properties have been investigated. Results of XRD and SEM indicate that the NiFe{sub 2}O{sub 4} samples exhibit a typical single phase spinel structure and a uniform particle distribution. The dielectric constant and dielectric loss measurements show strong frequency dependence of all the samples. The peak observed in frequency dependence of dielectric loss measurements shifts to higher frequency with the increasing sintering temperature, indicating a Debye-like dielectric relaxation. The remanent magnetization increases with the increasing grain size while the coercivity is just the opposite. The saturation magnetization can achieve 50 emu/g when the sintering temperature is more than 1000 °C, and the lowest coercivity (159.49 Oe) was observed in the NFO sample sintered at 1300 °C for 2 h. - Highlights: • Mr value increases with the increasing grain size while Hc is just the opposite. • Ms achieve 50 emu/g when the sintering temperature is more than 1000 °C. • The lowest Hc value is 159.49 Oe for the NFO sample sintered at 1300 °C.

Theory of suppressing avalanche process of carrier in short pulse laser irradiated dielectrics

Energy Technology Data Exchange (ETDEWEB)

Deng, H. X., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Zu, X. T., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu; Xiang, X. [School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zheng, W. G.; Yuan, X. D. [Research Center of Laser Fusion, China Academy of Engineering Physics, Mianyang 621900 (China); Sun, K., E-mail: hxdeng@uestc.edu.cn, E-mail: xtzu@uestc.edu.cn, E-mail: kaisun@umich.edu [Department of Materials Engineering and Sciences, University of Michigan, 413B Space Research Building, Ann Arbor, Michigan 48109-2143 (United States); Gao, F. [Pacific Northwest National Laboratory, P. O. Box 999, Richland, Washington 99352 (United States)

2014-05-28

A theory for controlling avalanche process of carrier during short pulse laser irradiation is proposed. We show that avalanche process of conduction band electrons (CBEs) is determined by the occupation number of phonons in dielectrics. The theory provides a way to suppress avalanche process and a direct judgment for the contribution of avalanche process and photon ionization process to the generation of CBEs. The obtained temperature dependent rate equation shows that the laser induced damage threshold of dielectrics, e.g., fused silica, increase nonlinearly with the decreases of temperature. Present theory predicts a new approach to improve the laser induced damage threshold of dielectrics.

Polarization-dependent diffraction in all-dielectric, twisted-band structures

Energy Technology Data Exchange (ETDEWEB)

Kardaś, Tomasz M.; Jagodnicka, Anna; Wasylczyk, Piotr, E-mail: pwasylcz@fuw.edu.pl [Photonic Nanostructure Facility, Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warszawa (Poland)

2015-11-23

We propose a concept for light polarization management: polarization-dependent diffraction in all-dielectric microstructures. Numerical simulations of light propagation show that with an appropriately configured array of twisted bands, such structures may exhibit zero birefringence and at the same time diffract two circular polarizations with different efficiencies. Non-birefringent structures as thin as 3 μm have a significant difference in diffraction efficiency for left- and right-hand circular polarizations. We identify the structural parameters of such twisted-band matrices for optimum performance as circular polarizers.

Low temperature magneto-dielectric measurements on BiFeO3 lightly substituted by cobalt

International Nuclear Information System (INIS)

Ray, J.; Biswal, A. K.; Vishwakarma, P. N.

2015-01-01

Dielectric and magnetodielectric measurements are done on BiFe 1−x Co x O 3 : x = 0, 0.01, and 0.02 in the temperature range 70–300 K and up to magnetic field 1.3 T. The dielectric data are well described by Haverliak–Negami expression plus an additional term for the Maxwell Wagner (MW) type relaxations, whose contribution is dominant near room temperature. The parameters obtained from the fitting of data using the above mentioned expression, suggest slowing down of relaxation and approach towards ideal Debye type relaxations, as the temperature is lowered. The dielectric relaxations obey polaronic variable range hopping model with distinct activation energies (E a ) in the extrinsic (6.67T 3/4  meV) and intrinsic (2.88T 3/4  meV) regions for the parent sample (x = 0), and thus a distinct transition from extrinsic to intrinsic behavior is seen at 215 K while lowering the temperature. This distinct transition is missing for Co substituted samples probably due to the extrinsic region values of E a (3.42T 3/4  meV and 2.42T 3/4  meV for x = 0.01 and 0.02, respectively) comparable to that of the intrinsic region (see x = 0). The magnetodielectric measurement shows positive magnetodielectricity (MD) in the intrinsic region (T < 215 K for x = 0) and negative MD in the extrinsic region (T > 215 K for x = 0). The extrinsic region is found to be dominated by MW and magnetoresistance effects, whereas MD in intrinsic regions is due to the spin reorientation transitions. The Co substitution is found to increase the extrinsic and non-Debye contributions to dielectricity, which becomes so large that no spin reorientation transitions are seen in x = 0.02 sample. The pyroelectric active region in x = 0 is found to be dominated by the diffusive behavior having contribution of the form ω −0.5

Features of dielectric response in PMN-PT ferroelectric ceramics

International Nuclear Information System (INIS)

Guerra, J D S; Araujo, E B; Guarany, C A; Reis, R N; Lima, E C

2008-01-01

In this paper, electrical and structural properties were reported for pyrochlore free (1 - x)[Pb(Mg 1/3 Nb 2/3 )O 3 ] - xPbTiO 3 (PMN-PT) (with 35 mol% PbTiO 3 ) ceramics obtained from fine powders. Dielectric studies were focused on the investigation of the complex dielectric permittivity (ε' - iε'') as a function of frequency and temperature. The effects of the dc applied electric field on dielectric response were also investigated. Results revealed a field dependence dielectric anomaly in the dielectric permittivity curves (ε(T)) in the low dc electric field region, which in turn prevails in the whole analysed frequency interval. To the best of our knowledge, these properties for the PMN-PT ceramic system have not been reported before as in this work. The results were analysed within the framework of the current models found in the literature.

γ-rays irradiation effects on dielectric properties of Ti/Au/GaAsN Schottky diodes with 1.2%N

Science.gov (United States)

Teffahi, A.; Hamri, D.; Djeghlouf, A.; Abboun Abid, M.; Saidane, A.; Al Saqri, N.; Felix, J. F.; Henini, M.

2018-06-01

Dielectric properties of As grown and irradiated Ti /Au/GaAsN Schottky diodes with 1.2%N are investigated using capacitance/conductance-voltage measurements in 90-290 K temperature range and 50-2000 kHz frequency range. Extracted parameters are interface state density, series resistance, dielectric constant, dielectric loss, tangent loss and ac conductivity. It is shown that exposure to γ-rays irradiation leads to reduction in effective trap density believed to result from radiation-induced traps annulations. An increase in series resistance is attributed to a net doping reduction. Dielectric constant (ε') shows usual step-like transitions with corresponding relaxation peaks in dielectric loss. These peaks shift towards lower temperature as frequency decrease. Temperature dependant ac conductivity followed an Arrhenius relation with activation energy of 153 meV in the 200-290 K temperature range witch correspond to As vacancy. The results indicate that γ-rays irradiation improves the dielectric and electrical properties of the diode due to the defect annealing effect.

Investigation of NOx Reduction by Low Temperature Oxidation Using Ozone Produced by Dielectric Barrier Discharge

DEFF Research Database (Denmark)

Stamate, Eugen; Irimiea, Cornelia; Salewski, Mirko

2013-01-01

NOx reduction by low temperature oxidation using ozone produced by a dielectric barrier discharge generator is investigated for different process parameters in a 6m long reactor in serpentine arrangement using synthetic dry flue gas with NOx levels below 500 ppm, flows up to 50 slm and temperatures...

Magnetic field effect on indole exciplexes: an anomalous dielectric dependence

International Nuclear Information System (INIS)

Sengupta, Tamal; Basu, Samita

2004-01-01

Individual exciplex formation between various aromatic hydrocarbons, anthracene, pyrene, all-s-trans-1,4-diphenylbuta-1,3-diene and a heteroaromatic amine, 1,2-dimethylindole, was investigated by steady-state fluorescence and magnetic field effect (MFE). A comparative study was carried out with two other exciplex systems 9-cyanophenanthrene-1,2-dimethylindole and 9-cyanophenanthrene-N-methylindole. The extent of charge transfer and dielectric dependence of MFE reveals the potential role of specific interactions related to exciplex geometry

Dielectric properties of (CuO,CaO2, and BaO)y/CuTl-1223 composites

International Nuclear Information System (INIS)

Mumtaz, M.; Kamran, M.; Nadeem, K.; Jabbar, Abdul; Khan, Nawazish A.; Saleem, Abida; Hussain, S.Tajammul; Kamran, M.

2013-01-01

We synthesized (CuO, CaO 2 , and BaO) y /Cu 0.5 Tl 0.5 Ba 2 Ca 2 Cu 3 O 10-δ (y = 0, 5%, 10%, 15%) composites by solid-state reaction and characterized by x-ray diffraction, scanning electron microscopy, dc-resistivity, and Fourier transform infrared spectroscopy. Frequency and temperature dependent dielectric properties such as real and imaginary part of dielectric constant, dielectric loss, and ac-conductivity of these composites are studied by capacitance and conductance measurement as a function of frequency (10 kHz to 10 MHz) and temperature (78 to 300 K). The x-ray diffraction analysis reveals that the characteristic behavior of Cu 0.5 Tl 0.5 Ba 2 Ca 2 Cu 3 O 10-δ superconductor phase and its structure is nearly undisturbed by doping of nanoparticles. The scanning electron microscopy images show the improvement in the intergranular links among the superconducting grains with increasing nanoparticles concentration. Microcracks are healed up with the inclusion of these nanoparticles and superconducting volume fraction is also increased. The dielectric properties of these composites strongly depend upon the frequency and temperature. The zero resistivity critical temperature and dielectric properties show opposite trend with the addition of nanoparticles in Cu 0.5 Tl 0.5 Ba 2 Ca 2 Cu 3 O 10-δ superconductor matrix.

Modeling of Dielectric Heating within Lyophilization Process

Directory of Open Access Journals (Sweden)

Jan Kyncl

2014-01-01

Full Text Available A process of lyophilization of paper books is modeled. The process of drying is controlled by a dielectric heating system. From the physical viewpoint, the task represents a 2D coupled problem described by two partial differential equations for the electric and temperature fields. The material parameters are supposed to be temperature-dependent functions. The continuous mathematical model is solved numerically. The methodology is illustrated with some examples whose results are discussed.

Flexible Ultrahigh-Temperature Polymer-Based Dielectrics with High Permittivity for Film Capacitor Applications

Directory of Open Access Journals (Sweden)

Zejun Pu

2017-11-01

Full Text Available In this report, flexible cross-linked polyarylene ether nitrile/functionalized barium titanate(CPEN/F-BaTiO3 dielectrics films with high permittivitywere prepared and characterized. The effects of both the F-BaTiO3 and matrix curing on the mechanical, thermal and dielectric properties of the CPEN/F-BaTiO3 dielectric films were investigated in detail. Compared to pristine BaTiO3, the surface modified BaTiO3 particles effectively improved their dispersibility and interfacial adhesion in the polymer matrix. Moreover, the introduction of F-BaTiO3 particles enhanced dielectric properties of the composites, with a relatively high permittivity of 15.2 and a quite low loss tangent of 0.022 (1 kHz when particle contents of 40 wt % were utilized. In addition, the cyano (–CN groups of functional layer also can serve as potential sites for cross-linking with polyarylene ether nitrile terminated phthalonitrile (PEN-Ph matrix and make it transform from thermoplastic to thermosetting. Comparing with the pure PEN-ph film, the latter results indicated that the formation of cross-linked network in the polymer-based system resulted in increased tensile strength by ~67%, improved glass transition temperature (Tg by ~190 °C. More importantly, the CPEN/F-BaTiO3 composite films filled with 30 wt % F-BaTiO3 particles showed greater energy density by nearly 190% when compared to pure CPEN film. These findings enable broader applications of PEN-based composites in high-performance electronics and energy storage devices materials used at high temperature.

Relationship of Cure Temperature to Mechanical, Physical, and Dielectric Performance of PDMS Glass Composite for Electric Motor Insulation

Science.gov (United States)

Miller, Sandi G.; Becker, Kathleen; Williams, Tiffany S.; Scheiman, Daniel A.; McCorkle, Linda S.; Heimann, Paula J.; Ring, Andrew; Woodworth, Andrew

2017-01-01

Achieving NASAs aggressive fuel burn and emission reduction for N-plus-3 aircraft will require hybrid electric propulsion system in which electric motors driven by either power generated from turbine or energy storage system will power the fan for propulsion. Motors designed for hybrid electric aircraft are expected to operate at medium to high voltages over long durations in a high altitude service environment. Such conditions have driven research toward the development of wire insulation with improved mechanical strength, thermal stability and increased breakdown voltage. The silicone class of materials has been considered for electric wire insulation due to its inherent thermal stability, dielectric strength and mechanical integrity. This paper evaluates the dependence of these properties on the cure conditions of a polydimethyl-siloxane (PDMS) elastomer; where both cure temperature and base-to-catalyst ratio were varied. The PDMS elastomer was evaluated as a bulk material and an impregnation matrix within a lightweight glass veil support. The E-glass support was selected for mechanical stiffness and dielectric strength. This work has shown a correlation between cure conditions and material physical properties. Tensile strength increased with cure temperature whereas breakdown voltage tended to be independent of process variations. The results will be used to direct material formulation based on specific insulation requirements.

Dielectric behavior and phase transition in [111]-oriented PIN–PMN–PT single crystals under dc bias

Directory of Open Access Journals (Sweden)

Yuhui Wan

2014-01-01

Full Text Available Temperature and electric field dependences of the dielectric behavior and phase transition for [111]-oriented 0.23PIN–0.52PMN–0.25PT (PIN-PMN–0.25PT and 0.24PIN–0.43PMN–0.33PT (PIN–PMN–0.33PT single crystals were investigated over a temperature range from -100°C to 250°C using field-heating (FH dielectric measurements. The transition phenomenon from ferroelectric microdomain to macrodomain was found in rhombohedra (R phase region in the single crystals under dc bias. This transition temperature Tf of micro-to-macrodomain is sensitive to dc bias and move quickly to lower temperature with increasing dc bias. The phase transition temperatures in the two single crystals shift toward high temperature and the dielectric permittivities at the phase transition temperature decrease with increasing dc bias. Especially, the phase transition peaks are gradually broad in PIN–PMN–0.33PT single crystal with the increasing dc bias. Effects of dc bias on the dielectric behavior and phase transition in PIN–PMN–PT single crystals are discussed.

Room temperature magnetic and dielectric properties of cobalt doped CaCu3Ti4O12 ceramics

Science.gov (United States)

Mu, Chunhong; Song, Yuanqiang; Wang, Haibin; Wang, Xiaoning

2015-05-01

CaCu3Ti4-xCoxO12 (x = 0, 0.2, 0.4) ceramics were prepared by a conventional solid state reaction, and the effects of cobalt doping on the room temperature magnetic and dielectric properties were investigated. Both X-ray diffraction and energy dispersive X-ray spectroscopy confirmed the presence of Cu and Co rich phase at grain boundaries of Co-doped ceramics. Scanning electron microscopy micrographs of Co-doped samples showed a striking change from regular polyhedral particle type in pure CaCu3Ti4O12 (CCTO) to sheet-like grains with certain growth orientation. Undoped CaCu3Ti4O12 is well known for its colossal dielectric constant in a broad temperature and frequency range. The dielectric constant value was slightly changed by 5 at. % and 10 at. % Co doping, whereas the second relaxation process was clearly separated in low frequency region at room temperature. A multirelaxation mechanism was proposed to be the origin of the colossal dielectric constant. In addition, the permeability spectra measurements indicated Co-doped CCTO with good magnetic properties, showing the initial permeability (μ') as high as 5.5 and low magnetic loss (μ″ < 0.2) below 3 MHz. And the interesting ferromagnetic superexchange coupling in Co-doped CaCu3Ti4O12 was discussed.

Magnetically coupled Fano resonance of dielectric pentamer oligomer

International Nuclear Information System (INIS)

Zhang, Fuli; Li, Chang; He, Xuan; Chen, Lei; Fan, Yuancheng; Zhao, Qian; Zhang, Weihong; Zhou, Ji

2017-01-01

We present magnetically induced Fano resonance inside a dielectric metamaterial pentamer composed of ceramic bricks. Unlike previous reports where different sizes of dielectric resonators were essential to produce Fano resonance, under external magnetic field excitation, central and outer dielectric bricks with identical sizes exhibit in-phase and out-of-phase magnetic Mie oscillations. An asymmetric line shape of Fano resonance along with enhanced group delay is observed due to the interference between the magnetic resonance of the central brick and the symmetric magnetic resonance of outer bricks. Besides, Fano resonance blueshifts with the increasing resonance of the smaller central brick. The thermal-dependent permittivity of ceramics allows Fano resonance to be reversibly tuned by 300 MHz when temperature varies by 60 °C. (paper)

Dielectric properties of BaBi4Ti4O15 ceramics produced by cost-effective chemical method

International Nuclear Information System (INIS)

Chakrabarti, A.; Bera, J.; Sinha, T.P.

2009-01-01

BaBi 4 Ti 4 O 15 , an Aurivillius compound, was synthesized by a cost-effective soft chemical route. The precursor was prepared by precipitating Bi- and Ba-oxalates inside a TiO 2 powder suspension. A phase pure orthorhombic BaBi 4 Ti 4 O 15 was synthesized by heating the precursor powder at 1000 deg. C. The phase formation behavior was investigated using TG-DSC and XRD. Densification behavior of the powder and microstructure development in sintered pellet was examined. Temperature dependent dielectric study of the ceramic has been investigated in the temperature range 300-780 K and frequency range of 1 kHz-1 MHz. The broad dielectric constant peaks at temperature T m was frequency dependent. The dielectric relaxation rate follows the Vogel-Fulcher relation with activation energy=0.2639 eV, relaxation frequency=4.95x10 21 Hz, and freezing temperature=620 K. All these parameters indicate that BaBi 4 Ti 4 O 15 is a relaxor ferroelectric.

Dielectric properties of a potassium nitrate–ammonium nitrate system

OpenAIRE

Alexey Yu. Milinskiy; Anton A. Antonov

2015-01-01

Potassium nitrate has a rectangular hysteresis loop and is thought to be a promising material for non-volatile ferroelectric memory. However, its polar phase is observed in a narrow temperature range. This paper deals with an effect of ammonium nitrate NH4NO3 on the dielectric properties of potassium nitrate. Thermal dependencies of the linear dielectric permittivity ε and the third-harmonic coefficient g3 for potassium nitrate and polycrystalline binary (KNO3)1–x(NH4NO3)x system (x = 0.025, ...

Dielectric and AC-conductivity studies of Dy2O3 doped (K0.5Na0.5NbO3 ceramics

Directory of Open Access Journals (Sweden)

Mahesh Peddigari

2014-08-01

Full Text Available (K0.5Na0.5NbO3 + x wt.% Dy2O3 (x = 0–1.5 ferroelectric ceramics were prepared by conventional solid state reaction method. XRD patterns revealed that orthorhombic symmetry has transformed into psuedocubic symmetry with increasing the substitution of Dy3+ in the Na+ site. Temperature and frequency dependences of relative dielectric permittivity maximum conforms the transformation from normal ferroelectric to relaxor ferroelectric behaviour. Frequency dependence of the relative dielectric permittivity maximum temperature observed for the samples with x ≥ 1.0 and satisfied the Vogel–Fulcher law. The diffuseness exponent γ (1.27–1.95 estimated from the high temperature slopes of the diffused dielectric permittivity data reveals that the degree of relaxor behavior increases with increasing the amount of Dy2O3. The temperature dependence of AC-conductivity σAC (T analysis in the range 310 K < T < 470 K reveals the existence of variable range hopping of charge carriers with average hopping length RH and hopping energy EH are in the range 8.5–27 Å and 48–153 meV, respectively. Voltage dependent dielectric constant measurements confirm the ferroelectric nature of KNN+ x wt% Dy2O3 ceramics.

Dielectric response and pyroelectric properties of lead-free ferroelectric Ba3(VO42

Directory of Open Access Journals (Sweden)

Biswajit Pati

2015-03-01

Full Text Available The current paper presents results of dielectric response, pyroelectric behavior and conductivity study of lead-free ferroelectric barium orthovanadate (Ba3(VO42 or Ba3V2O8 ceramic, for a wide range of temperature and frequency. An X-ray diffraction study suggests the formation of a single-phase compound in trigonal crystal system. The SEM micrograph of gold-coated pellet sample shows well-defined and homogeneous morphology. Detailed studies of dielectric parameters (εr and tan δ of the compound as a function of temperature and frequency reveal their independence over a wide range of temperature and frequency. The nature of Polarization versus electric field (P–E hysteresis loop of Ba3V2O8 at room temperature suggests its ferroelectric nature. The temperature dependence of pyroelectric coefficient and figure of merits of the sample support its dielectric response. The nature of variation of dc conductivity with temperature confirms the Arrhenius and negative temperature coefficient of resistance (NTCR behavior of the material.

Microstructure and dielectric properties of biocarbon nanofiber composites

Science.gov (United States)

Dai, Bo; Ren, Yong; Wang, Gaihua; Ma, Yongjun; Zhu, Pei; Li, Shirong

2013-06-01

A kind of web-like carbon with interconnected nanoribbons was fabricated using bacterial cellulose pyrolyzed at various temperatures, and the microwave dielectric properties were investigated. Bacterial cellulose was converted into carbonized bacterial cellulose (CBC) with a novel three-dimensional web built of entangled and interconnected cellulose ribbons when the carbonization temperature was below 1,200°C; the web-like structure was destroyed at a temperature of 1,400°C. Composites of CBC impregnated with paraffin wax exhibited high complex permittivity over a frequency range of 2 to 18 GHz, depending on the carbonization temperature. Both real and imaginary parts were the highest for CBC pyrolyzed at 1,200°C. The complex permittivity also strongly depended on CBC loadings. For 7.5 wt.% loading, the real and imaginary permittivities were about 12 and 4.3, respectively, and the minimum reflection loss was -39 dB at 10.9 GHz. For 30 wt.% loading, the real and imaginary permittivities were about 45 and 80, respectively, and the shielding efficiency was more than 24 dB in the measured frequency range and could be up to 39 dB at 18 GHz. The electromagnetic properties were assumed to correlate with both the dielectric relaxation and the novel web-like structure.

Experimental Characterization of Dielectric Properties in Fluid Saturated Artificial Shales

Directory of Open Access Journals (Sweden)

Roman Beloborodov

2017-01-01

Full Text Available High dielectric contrast between water and hydrocarbons provides a useful method for distinguishing between producible layers of reservoir rocks and surrounding media. Dielectric response at high frequencies is related to the moisture content of rocks. Correlations between the dielectric permittivity and specific surface area can be used for the estimation of elastic and geomechanical properties of rocks. Knowledge of dielectric loss-factor and relaxation frequency in shales is critical for the design of techniques for effective hydrocarbon extraction and production from unconventional reservoirs. Although applicability of dielectric measurements is intriguing, the data interpretation is very challenging due to many factors influencing the dielectric response. For instance, dielectric permittivity is determined by mineralogical composition of solid fraction, volumetric content and composition of saturating fluid, rock microstructure and geometrical features of its solid components and pore space, temperature, and pressure. In this experimental study, we investigate the frequency dependent dielectric properties of artificial shale rocks prepared from silt-clay mixtures via mechanical compaction. Samples are prepared with various clay contents and pore fluids of different salinity and cation compositions. Measurements of dielectric properties are conducted in two orientations to investigate the dielectric anisotropy as the samples acquire strongly oriented microstructures during the compaction process.

Broadband dielectric spectroscopy and calorimetric investigations of D-lyxose.

Science.gov (United States)

Singh, Lokendra P; Alegría, A; Colmenero, J

2011-10-18

Using broadband dielectric spectroscopy, we have studied different types of relaxation processes, namely, primary (α), secondary (β), and another sub-T(g) process called γ-process, in the supercooled state of D-lyxose, over a wide frequency (10(-2)-10(9) Hz) and temperature range (120-340 K). In addition, the same sample was analyzed by differential scanning calorimeter. The temperature dependence of the relaxation times as well as the dielectric strength of different processes has been critically examined. It has been observed that the slower secondary relaxation (designated as β-) process shifts to lower frequencies with increasing applied pressure, but not the faster one. This pressure dependence indicates that the observed slower secondary relaxation (β-) is Johari-Goldstein relaxation process and faster one (γ-process) is probably the rotation of hydroxymethyl (-CH(2)OH) side group attached to the sugar ring, that is, of intramolecular origin. Copyright © 2011 Elsevier Ltd. All rights reserved.

Effect of neodymium substitution on the electric and dielectric properties of Mn-Ni-Zn ferrite

Science.gov (United States)

Agami, W. R.

2018-04-01

Ferrite samples of Mn0.5Ni0.1Zn0.4NdxFe2-xO4 (x = 0.0, 0.01, 0.02, 0.05, 0.075 and 0.1) have been prepared by usual ceramic method. The temperature and composition dependences of the dc electric resistivity (ρdc) were studied. The frequency and composition dependences of the ac electric resistivity (ρac) and dielectric parameters (dielectric constant ε' and dielectric loss ε'') have been investigated. ρdc was found to decrease with temperature for all samples while it increases with increasing Nd3+ concentration. On the other hand, ρac and the dielectric properties were found to decrease with increasing the frequency while ρac increases and both ε' and ε'' decrease with increasing Nd3+ concentration. These results were explained by the Maxwell-Wagner two-layer model and Koops's theory. The improvement in dc and ac electric resistivities shows that these prepared materials are valid for decreasing the eddy current losses at high frequencies, so they can be used in the fabrication of multilayer chip inductor (MLCI) devices.

Thermally switchable dielectrics

Science.gov (United States)

Dirk, Shawn M.; Johnson, Ross S.

2013-04-30

Precursor polymers to conjugated polymers, such as poly(phenylene vinylene), poly(poly(thiophene vinylene), poly(aniline vinylene), and poly(pyrrole vinylene), can be used as thermally switchable capacitor dielectrics that fail at a specific temperature due to the non-conjugated precursor polymer irreversibly switching from an insulator to the conjugated polymer, which serves as a bleed resistor. The precursor polymer is a good dielectric until it reaches a specific temperature determined by the stability of the leaving groups. Conjugation of the polymer backbone at high temperature effectively disables the capacitor, providing a `built-in` safety mechanism for electronic devices.

Dispersion of Dielectric Permittivity in a Nanocrystalline Cellulose-Triglycine Sulfate Composite at Low and Ultralow Frequencies

Science.gov (United States)

Thu'o'ng, Nguyen Hoai; Sidorkin, A. S.; Milovidova, S. D.

2018-03-01

The dispersion of dielectric permittivity in nanocrystalline cellulose-triglycine sulfate composites is studied in the range of frequencies from 10-3 to 106 Hz, at temperatures varying from room temperature to the temperature of phase transition in this composite (54°C), in weak electric fields (1 V cm-1). Two behaviors for the dielectric dispersion are identified in the studied frequency range: at ultralow frequencies (10-3-10 Hz), the dispersion is due to Maxwell-Wagner polarization, while at higher frequencies (10-106 Hz), the dispersion is due to the movement of domain walls in the embedded triglycine sulfate crystallites. An additional peak in the temperature-dependent profiles of dielectric permittivity is detected at lower temperatures in freshly prepared samples of the considered composite; we associate it with the presence of residual water in these samples.

Dielectric studies of Co3-xMnxO4 (x=0.1-1.0) cubic spinel multiferroic

Science.gov (United States)

Meena, P. L.; Kumar, Ravi; Prajapat, C. L.; Sreenivas, K.; Gupta, Vinay

2009-07-01

A series of Co3-xMnxO4 (x =0.1-1.0) multiferroic cubic spinel ceramics were prepared to study the effect of Mn substitution at Co site on the crystal structures and dielectric properties. No significant change in the structural symmetry was observed with increasing x up to 1.0. A linear increase in lattice parameter with x is attributed to the substitution of Co3+ by Mn3+ (large ionic radii) at the octahedral sites. An antiferromagnetic-type ordering of Co3O4 changes to ferrimagnetic-type order after incorporation of Mn. The effect of Mn substitution on the dielectric constant and loss tangent was studied over a wide range of frequency (75 kHz-5 MHz) and temperature of 150-450 K. The measured value of room temperature ac conductivity at 1.0 MHz was found to increase from 2.0×10-6 to 4.4×10-4 Ω-1 cm-1 and follows power law (σac=Aωs) behavior. The dielectric constant ɛ'(ω) shows a weak frequency dispersion and small temperature dependence below 250 K for all ceramic samples. However, a strong temperature and frequency dependence on ɛ'(ω) was observed at higher temperature (>250 K). The temperature dependent ɛ'(ω) data show the existence of room temperature ferroelectricity in all prepared samples.

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Energy Technology Data Exchange (ETDEWEB)

Vais, Abhitosh, E-mail: Abhitosh.Vais@imec.be; Martens, Koen; DeMeyer, Kristin [Department of Electrical Engineering, KU Leuven, B-3000 Leuven (Belgium); IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, Han-Chung; Ivanov, Tsvetan; Collaert, Nadine; Thean, Aaron [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Dou, Chunmeng [Frontier Research Center, Tokyo Institute of Technology, Yokohama 226-8502 (Japan); Xie, Qi; Maes, Jan [ASM International, B-3001 Leuven (Belgium); Tang, Fu; Givens, Michael [ASM International, Phoenix, Arizona 85034-7200 (United States); Raskin, Jean-Pierre [Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Universiteé Catholique de Louvain, B-1348 Louvain-la-Neuve (Belgium)

2015-08-03

This paper presents a detailed investigation of the temperature dependence of frequency dispersion observed in capacitance-voltage (C-V) measurements of III-V metal-oxide-semiconductor (MOS) devices. The dispersion in the accumulation region of the capacitance data is found to change from 4%–9% (per decade frequency) to ∼0% when the temperature is reduced from 300 K to 4 K in a wide range of MOS capacitors with different gate dielectrics and III-V substrates. We show that such significant temperature dependence of C-V frequency dispersion cannot be due to the temperature dependence of channel electrostatics, i.e., carrier density and surface potential. We also show that the temperature dependence of frequency dispersion, and hence, the capture/emission process of border traps can be modeled by a combination of tunneling and a “temperature-activated” process described by a non-radiative multi-phonon model, instead of a widely believed single-step elastic tunneling process.

Dielectric properties of residual water in amorphous lyophilized mixtures of sugar and drug

Energy Technology Data Exchange (ETDEWEB)

Moznine, R El [School of Pharmacy, De Montfort University, Leiceste (United Kingdom); Smith, G [School of Pharmacy, De Montfort University, Leicester (United Kingdom); Polygalov, E [School of Pharmacy, De Montfort University, Leicester (United Kingdom); Suherman, P M [School of Pharmacy, De Montfort University, Leicester (United Kingdom); Broadhead, J [AstraZeneca Charnwood R and D, Bakewell Rd, Loughborough (United Kingdom)

2003-02-21

Dielectric relaxation spectroscopy was used to investigate the properties of residual water in lyophilized formulations of a proprietary tri-phosphate drug containing a sugar (trehalose, lactose or sucrose) or dextran. The dielectric properties of each formulation were determined in the frequency range (0.1 Hz-0.1 MHz) and temperature range (30 deg. C-T{sub g}). The temperature dependence of the relaxation times for all samples showed Arrhenuis behaviour, from which the activation energy was derived. Proton hopping through the hydrogen-bonded network (clusters) of water molecules was suggested as the principle mode of charge transport. Significant differences in dielectric relaxation kinetics and activation energy were observed for the different formulations, which were found to correlate with the amount of monophosphate degradation product.

Time-dependent one-dimensional simulation of atmospheric dielectric barrier discharge in N2/O2/H2O using COMSOL Multiphysics

Science.gov (United States)

Sohbatzadeh, F.; Soltani, H.

2018-04-01

The results of time-dependent one-dimensional modelling of a dielectric barrier discharge (DBD) in a nitrogen-oxygen-water vapor mixture at atmospheric pressure are presented. The voltage-current characteristics curves and the production of active species are studied. The discharge is driven by a sinusoidal alternating high voltage-power supply at 30 kV with frequency of 27 kHz. The electrodes and the dielectric are assumed to be copper and quartz, respectively. The current discharge consists of an electrical breakdown that occurs in each half-period. A detailed description of the electron attachment and detachment processes, surface charge accumulation, charged species recombination, conversion of negative and positive ions, ion production and losses, excitations and dissociations of molecules are taken into account. Time-dependent one-dimensional electron density, electric field, electric potential, electron temperature, densities of reactive oxygen species (ROS) and reactive nitrogen species (RNS) such as: O, O-, O+, {O}2^{ - } , {O}2^{ + } , O3, {N}, {N}2^{ + } , N2s and {N}2^{ - } are simulated versus time across the gas gap. The results of this work could be used in plasma-based pollutant degradation devices.

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

Science.gov (United States)

Fernando, Nalin S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

2017-11-01

Epitaxial Ge layers on a Si substrate experience a tensile biaxial stress due to the difference between the thermal expansion coefficients of the Ge epilayer and the Si substrate, which can be measured using asymmetric X-ray diffraction reciprocal space maps. This stress depends on temperature and affects the band structure, interband critical points, and optical spectra. This manuscripts reports careful measurements of the temperature dependence of the dielectric function and the interband critical point parameters of bulk Ge and Ge epilayers on Si using spectroscopic ellipsometry from 80 to 780 K and from 0.8 to 6.5 eV. The authors find a temperature-dependent redshift of the E1 and E1 + Δ1 critical points in Ge on Si (relative to bulk Ge). This redshift can be described well with a model based on thermal expansion coefficients, continuum elasticity theory, and the deformation potential theory for interband transitions. The interband transitions leading to E0‧ and E2 critical points have lower symmetry and therefore are not affected by the stress.

Dielectric response and room temperature ferromagnetism in Cr doped anatase TiO2 nanoparticles

Science.gov (United States)

Naseem, Swaleha; Khan, Wasi; Khan, Shakeel; Husain, Shahid; Ahmad, Abid

2018-02-01

In the present work, nanocrystalline samples of Ti1-xCrxO2 (x = 0, 0.02, 0.04, 0.06 and 0.08) were synthesized in anatase phase through simple and cost effective acid modified sol gel method. The influence of Cr doping on thermal, microstructural, electrical and magnetic properties was investigated in TiO2 host matrix. The surface morphology has revealed less agglomeration and considerable reduction in particle size in case of Cr doped TiO2 as compared to undoped TiO2 nanoparticles (NPs). Energy dispersive x-ray spectroscopy (EDS), Raman and X-ray photoelectron spectroscopy (XPS) established high purity, appropriate stoichiometry and oxidation states of the compositions. The dielectric properties of the nanoparticles were altered by the doping concentration, applied frequency as well as temperature variation. The variation in dielectric constant (ε‧), dielectric loss (δ) and ac conductivity as a function of frequency and temperature at different doping concentration of Cr were interpreted in the light of Maxwell Wagner theory, space charge polarization mechanism and drift mobility of charge carriers. Both undoped and Cr doped TiO2 samples exhibit room temperature ferromagnetism (RTFM) that remarkably influenced by means of the Cr content. The significant enhancement in the magnetization was observed at 4% Cr doping. However, decrease in magnetization for higher doping signify antiferromagnetic interactions between Cr ions or superexchange mechanism. These results reveal that the oxygen vacancies play a crucial role to initiate the RTFM. Therefore, the present investigation suggests the potential applications of Cr doped TiO2 nanoparticles for spintronics application.

Disclosed dielectric and electromechanical properties of hydrogenated nitrile–butadiene dielectric elastomer

International Nuclear Information System (INIS)

Yang, Dan; Tian, Ming; Dong, Yingchao; Liu, Haoliang; Yu, Yingchun; Zhang, Liqun

2012-01-01

This paper presents a comprehensive study of the effects of acrylonitrile content, crosslink density and plasticization on the dielectric and electromechanical performances of hydrogenated nitrile–butadiene dielectric elastomer. It was found that by increasing the acrylonitrile content of hydrogenated nitrile–butadiene dielectric elastomer, the dielectric constant will be improved accompanied with a sharp decrease of electrical breakdown strength leading to a small actuated strain. At a fixed electric field, a high crosslink density increased the elastic modulus of dielectric elastomer, but it also enhanced the electrical breakdown strength leading to a high actuated strain. Adding a plasticizer into the dielectric elastomer decreased the dielectric constant and electrical breakdown strength slightly, but reduced the elastic modulus sharply, which was beneficial for obtaining a large strain at low electric field from the dielectric elastomer. The largest actuated strain of 22% at an electric field of 30 kV mm −1 without any prestrain was obtained. Moreover, the hydrogenated nitrile–butadiene dielectric actuator showed good history dependence. This proposed material has great potential to be an excellent dielectric elastomer. (paper)

Semiconductor-to-metallic flipping in a ZnFe2O4–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

International Nuclear Information System (INIS)

Ameer, Shahid; Gul, Iftikhar Hussain; Mahmood, Nasir; Mujahid, Muhammad

2015-01-01

Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO 2 ) 2 –graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior

Insight into the effect mechanism of urea-induced protein denaturation by dielectric spectroscopy.

Science.gov (United States)

Zhang, Cancan; Yang, Man; Zhao, Kongshuang

2017-12-06

Dielectric relaxation spectroscopy was applied to study how urea affects the phase transition of a thermosensitive polymer, poly(N-isopropylacrylamide) (PNIPAM), which has been widely used as a protein model. It was found that there is a pronounced relaxation near 10 GHz for the ternary system of PNIPAM in urea aqueous solution. The temperature dependence of dielectric parameters indicates that urea can reduce the lower critical solution temperature (LCST) of PNIPAM, i.e., stabilize the globule state of PNIPAM and collapse the PNIPAM chains. Based on our results, the interaction mechanism of urea on the conformational transition of PNIPAM was presented: urea replaces water molecules directly bonding with PNIPAM and acts as the bridging agent for the adjacent side chains of PNIPAM. Accordingly, the mechanism with which urea denatures protein was deduced. In addition, it is worth mentioning that, from the temperature dependence of the dielectric parameters obtained in the presence of urea, an interesting phenomenon was found in which the effect of urea on PNIPAM seems to take 2 M as a unit. This result may be the reason why urea and TMAO exit marine fishes at a specific ratio of 2 : 1.

Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

Science.gov (United States)

Guha, Suchismita; Laudari, Amrit

2017-08-01

The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

Noise-driven diamagnetic susceptibility of impurity doped quantum dots: Role of anisotropy, position-dependent effective mass and position-dependent dielectric screening function

International Nuclear Information System (INIS)

Bera, Aindrila; Saha, Surajit; Ganguly, Jayanta; Ghosh, Manas

2016-01-01

Highlights: • Diamagnetic susceptibility (DMS) of doped quantum dot is studied. • The dot is subjected to Gaussian white noise. • Role of anisotropy, PDEM and PDDSF have been analyzed. • Noise amplifies and suppresses DMS depending on particular condition. • Findings bear significant technological importance. - Abstract: We explore Diamagnetic susceptibility (DMS) of impurity doped quantum dot (QD) in presence of Gaussian white noise introduced to the system additively and multiplicatively. In view of this profiles of DMS have been pursued with variations of geometrical anisotropy and dopant location. We have invoked position-dependent effective mass (PDEM) and position-dependent dielectric screening function (PDDSF) of the system. Presence of noise sometimes suppresses and sometimes amplifies DMS from that of noise-free condition and the extent of suppression/amplification depends on mode of application of noise. It is important to mention that the said suppression/amplification exhibits subtle dependence on use of PDEM, PDDSF and geometrical anisotropy. The study reveals that DMS, or more fundamentally, the effective confinement of LDSS, can be tuned by appropriate mingling of geometrical anisotropy/effective mass/dielectric constant of the system with noise and also on the pathway of application of latter.

Dielectric relaxation studies of some primary alcohols and their mixture with water

International Nuclear Information System (INIS)

Ahmad, S.S.; Yaqub, M.

2003-01-01

The complex dielectric constant of ethyl alcohol, methyl alcohol and 1- propanol and their mixtures with water of different concentration, (0 to 100% by weight) at the temperature of 303K has been evaluated, within the frequency range of (100KHz- 100 MHz). Moreover, the viscosity mu of each alcohol and its mixture with water have been measured at this temperature. The dielectric properties have been evaluated by Hartshorn and Ward apparatus. The purpose of this work is to study the influence of aliphatic group, size and shape on the extent of hydrogen bonding and also to obtain the thermodynamic data on hydrogen bond formation in the pure liquid state and its mixture. The width of the semicircle plot determines the distribution of average relaxation time. Dielectric relaxation time in pure alcohols and their water mixture has been calculated from the respected Cole-Cole plot and dielectric data. A single relaxation time of 117.16ps has been obtained for the molecules of pure methanol, whereas, the dielectric data of prophyl alcohol which indicates the viscosity water have been measured at the temperature 303 K. The dielectric properties in distribution of relaxation time, which is in good agreement with the Davidson-cole representation. The molecules in liquid mixture within frequency range, the mixture has more than one relaxation item, leading to the shortening of main relaxation time as compared with the pure alcohol and broadening of the complex permitivity spectra. The dependence of the dielectric relaxation on composition shows a remarkable behavior. Results are discussed in the light of H-bonded molecules. (author)

Electron-induced dry reforming of methane in a temperature-controlled dielectric barrier discharge reactor

KAUST Repository

Zhang, Xuming

2013-09-23

Dry reforming of methane has the potential to reduce the greenhouse gases methane and carbon dioxide and to generate hydrogen-rich syngas. In reforming methane, plasma-assisted reforming processes may have advantages over catalytic processes because they are free from coking and their response time for mobile applications is quick. Although plasma-assisted reforming techniques have seen recent developments, systematic studies that clarify the roles that electron-induced chemistry and thermo-chemistry play are needed for a full understanding of the mechanisms of plasma-assisted reformation. Here, we developed a temperature-controlled coaxial dielectric barrier discharge (DBD) apparatus to investigate the relative importance of electron-induced chemistry and thermo-chemistry in dry reforming of methane. In the tested background temperature range 297-773 K, electron-induced chemistry, as characterized by the physical properties of micro-discharges, was found to govern the conversions of CH4 and CO2, while thermo-chemistry influenced the product selectivities because they were found to depend on the background temperature. Comparisons with results from arc-jet reformation indicated that thermo-chemistry is an efficient conversion method. Our findings may improve designs of plasma-assisted reformers by using relatively hotter plasma sources. However, detailed chemical kinetic studies are needed. © 2013 IOP Publishing Ltd.

Electron-induced dry reforming of methane in a temperature-controlled dielectric barrier discharge reactor

International Nuclear Information System (INIS)

Zhang, Xuming; Cha, Min Suk

2013-01-01

Dry reforming of methane has the potential to reduce the greenhouse gases methane and carbon dioxide and to generate hydrogen-rich syngas. In reforming methane, plasma-assisted reforming processes may have advantages over catalytic processes because they are free from coking and their response time for mobile applications is quick. Although plasma-assisted reforming techniques have seen recent developments, systematic studies that clarify the roles that electron-induced chemistry and thermo-chemistry play are needed for a full understanding of the mechanisms of plasma-assisted reformation. Here, we developed a temperature-controlled coaxial dielectric barrier discharge (DBD) apparatus to investigate the relative importance of electron-induced chemistry and thermo-chemistry in dry reforming of methane. In the tested background temperature range 297–773 K, electron-induced chemistry, as characterized by the physical properties of micro-discharges, was found to govern the conversions of CH 4 and CO 2 , while thermo-chemistry influenced the product selectivities because they were found to depend on the background temperature. Comparisons with results from arc-jet reformation indicated that thermo-chemistry is an efficient conversion method. Our findings may improve designs of plasma-assisted reformers by using relatively hotter plasma sources. However, detailed chemical kinetic studies are needed. (paper)

Influence of calcination temperature on sol-gel synthesized single-phase bismuth titanate for high dielectric capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Thiruramanathan, Pandirengan; Marikani, Arumugam [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Physics; Madhavan, Durairaj [Mepco Schlenk Engineering College, Tamil Nadu (India). Dept. of Chemistry; Bharadwaj, Suresh; Awasthi, Anand Mohan [UGC-DAE Consortium for Scientific Research, Indore (India). Thermodynamics Lab.

2016-05-15

An inexpensive sol-gel combustion method using citric acid as fuel has been used to synthesize bismuth titanate, Bi{sub 4}Ti{sub 3}O{sub 12} nanopowders. Thermogravimetric analysis proved that a calcination temperature of 900 C is sufficient for the preparation of single-phase bismuth titanate. X-ray diffraction and Fourier transform infrared spectroscopy are used to examine the influence of calcination temperature on the structural growth of the Bi{sub 4}Ti{sub 3}O{sub 12} nanopowder. The average crystallite size estimated by using the Scherrer method and the Williamson-Hall method was found to increase with calcination temperature. Photoluminescence behavior as a function of calcination temperature was observed at two different excitation wavelengths of 300 nm and 420 nm. The morphology of the particles analyzed using images obtained from field emission scanning electron microscopy displayed irregular, random sized, and spherical-shaped structures. The stoichiometry and purity of the nanopowder are confirmed by energy-dispersive spectroscopy. The broadband dielectric results established the highest dielectric constant (ε{sub r} = 450) for a frequency of 100 Hz achieved with a potential capacitance of 138 pF m{sup -2}. This establishes Bi{sub 4}Ti{sub 3}O{sub 12} as a promising dielectric material for achieving high energy density capacitors for the next-generation passive devices.

Structural, optical, morphological and dielectric properties of cerium oxide nanoparticles

International Nuclear Information System (INIS)

Prabaharan, Devadoss Mangalam Durai Manoharadoss; Sadaiyandi, Karuppasamy; Mahendran, Manickam; Sagadevan, Suresh

2016-01-01

Cerium oxide (CeO 2 ) nanoparticles were prepared by the precipitation method. The average crystallite size of cerium oxide nanoparticles was calculated from the X-ray diffraction (XRD) pattern and found to be 11 nm. The FT-IR spectrum clearly indicated the strong presence of cerium oxide nanoparticles. Raman spectrum confirmed the cubic nature of the cerium oxide nanoparticles. The Scanning Electron Microscopy (SEM) analysis showed that the nanoparticles agglomerated forming spherical-shaped particles. The Transmission Electron Microscopic (TEM) analysis confirmed the prepared cerium oxide nanoparticles with the particle size being found to be 16 nm. The optical absorption spectrum showed a blue shift by the cerium oxide nanoparticles due to the quantum confinement effect. The dielectric properties of cerium oxide nanoparticles were studied for different frequencies at different temperatures. The dielectric constant and the dielectric loss of the cerium oxide nanoparticles decreased with increase in frequency. The AC electrical conductivity study revealed that the conduction depended on both the frequency and the temperature. (author)

Structural, optical, morphological and dielectric properties of cerium oxide nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Prabaharan, Devadoss Mangalam Durai Manoharadoss [Department of Physics, NPR College of Engineering and Technology, Natham, Dindigul, Tamil Nadu (India); Sadaiyandi, Karuppasamy [Department of Physics, Alagappa Government Arts College, Karaikudi, Sivaganga, Tamil Nadu (India); Mahendran, Manickam [Department of Physics, Thiagarajar College of Engineering, Madurai, Tamil Nadu (India); Sagadevan, Suresh, E-mail: duraiphysics2011@gmail.com [Department of Physics, AMET University (India)

2016-03-15

Cerium oxide (CeO{sub 2}) nanoparticles were prepared by the precipitation method. The average crystallite size of cerium oxide nanoparticles was calculated from the X-ray diffraction (XRD) pattern and found to be 11 nm. The FT-IR spectrum clearly indicated the strong presence of cerium oxide nanoparticles. Raman spectrum confirmed the cubic nature of the cerium oxide nanoparticles. The Scanning Electron Microscopy (SEM) analysis showed that the nanoparticles agglomerated forming spherical-shaped particles. The Transmission Electron Microscopic (TEM) analysis confirmed the prepared cerium oxide nanoparticles with the particle size being found to be 16 nm. The optical absorption spectrum showed a blue shift by the cerium oxide nanoparticles due to the quantum confinement effect. The dielectric properties of cerium oxide nanoparticles were studied for different frequencies at different temperatures. The dielectric constant and the dielectric loss of the cerium oxide nanoparticles decreased with increase in frequency. The AC electrical conductivity study revealed that the conduction depended on both the frequency and the temperature. (author)

Excitation of photonic atoms (dielectric microspheres) on optical fibers: application to room-temperature persistent spectral hole burning

Science.gov (United States)

Serpenguzel, Ali; Arnold, Stephen; Griffel, Giora

1995-05-01

Recently, photonic atoms (dielectric microspheres) have enjoyed the attention of the optical spectroscopy community. A variety of linear and nonlinear optical processes have been observed in liquid microdroplets. But solid state photonic devices using these properties are scarce. A first of these applications is the room temperature microparticle hole-burning memory. New applications can be envisioned if microparticle resonances can be coupled to traveling waves in optical fibers. In this paper we demonstrate the excitation of narrow morphology dependent resonances of microparticles placed on an optical fiber. Furthermore we reveal a model for this process which describes the coupling efficiency in terms of the geometrical and material properties of the microparticle-fiber system.

Dielectric properties of polycrystalline Cu-Zn ferrites at microwave frequencies

International Nuclear Information System (INIS)

Lamani, Ashok R.; Jayanna, H.S.; Parameswara, P.; Somashekar, R.; Ramachander,; Rao, Ramchandra; Prasanna, G.D.

2011-01-01

Highlights: → Cu 1-x Zn x Fe 2 O 4 at different concentration are suitable for high frequency applications. → Dielectric properties are related with W-H plot. → The anisotropy due to the crystallite size effect is significant in change of dielectric constant. - Abstract: The real dielectric constant ε' and complex dielectric constant ε'' of Cu 1-x Zn x Fe 2 O 4 have been measured at room temperature in the high frequency range 1 MHz to 1.8 GHz. At low frequencies the dielectric loss is found to be constant up to 1.4 GHz and there is a sudden rise at 1.5 GHz. A qualitative explanation is given for the composition, frequency dependence of the dielectric constant and dielectric loss of Cu 1-x Zn x Fe 2 O 4 . These are correlated with the W-H plot which gives the information about change in the average crystal size and strain of the samples. The micro-morphological features of the samples were obtained by Scanning Electron Microscopy (SEM). The micrograph shows that the increase of the Zn content in Cu ferrite increases the grain size.

Nature of Dielectric Properties, Electric Modulus and AC Electrical Conductivity of Nanocrystalline ZnIn2Se4 Thin Films

Science.gov (United States)

El-Nahass, M. M.; Attia, A. A.; Ali, H. A. M.; Salem, G. F.; Ismail, M. I.

2018-02-01

The structural characteristics of thermally deposited ZnIn2Se4 thin films were indexed utilizing x-ray diffraction as well as scanning electron microscopy techniques. Dielectric properties, electric modulus and AC electrical conductivity of ZnIn2Se4 thin films were examined in the frequency range from 42 Hz to 106 Hz. The capacitance, conductance and impedance were measured at different temperatures. The dielectric constant and dielectric loss decrease with an increase in frequency. The maximum barrier height was determined from the analysis of the dielectric loss depending on the Giuntini model. The real part of the electric modulus revealed a constant maximum value at higher frequencies and the imaginary part of the electric modulus was characterized by the appearance of dielectric relaxation peaks. The AC electrical conductivity obeyed the Jonscher universal power law. Correlated barrier hopping model was the appropriate mechanism for AC conduction in ZnIn2Se4 thin films. Estimation of the density of states at the Fermi level and activation energy, for AC conduction, was carried out based on the temperature dependence of AC electrical conductivity.

Quantitative approach to relate dielectric constant studies with TSDC studies of 50 MeV Si ion irradiated kapton-H polymide

International Nuclear Information System (INIS)

Quamara, J.K.; Garg, Maneesha; Sridharbabu, Y.; Prabhavathi, T.

2003-01-01

Temperature and frequency dependent dielectric behaviour has been investigated for pristine and swift heavy ion irradiated (Si ion, 50 MeV energy) kapton-H polyimide in the temperature range of 30 to 250 deg C at frequencies 120 Hz, 1 kHz, 10 kHz and 100 kHz respectively. The dielectric relaxation behaviour of the same samples was also studied using thermally stimulated discharge current (TSDC) technique. A quantitative approach is developed using a well-known Clausius Mossotti equation to relate the TSDC findings to the dielectric constant studies. An overall increase in the dielectric constant of the irradiated samples are also in conformity to the TSDC findings. (author)

Effects of La{sub 2}O{sub 3}-doping and sintering temperature on the dielectric properties of BaSrTiO{sub 3} ceramics

Energy Technology Data Exchange (ETDEWEB)

Zhao, Hong Wei; Chang, Chun Rui [College of Science, North China University of Science and Technology, Hebei Province (China); Li, Yuan Liang [Hebei Provincial Key Laboratory of Inorganic Nonmetallic Materials, North China University of Science and Technology, Hebei Province (China); Yan, Chun Liang [Analysis and Testing Center, North China University of Science and Technology, Hebei Province (China)

2016-03-15

Using BaCO{sub 3}, SrCO{sub 3} and TiO{sub 2}, et al as crude materials, La{sub 2}O{sub 3} as dopant, Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) Ceramics of perovskite structure were prepared by solid state reaction method. We investigated the effects of La{sub 2}O{sub 3} -doping and sintering temperature on the dielectric properties of BaSrTiO{sub 3} ceramics. The experiment results show that: The amount of La{sub 2}O{sub 3} can increase the dielectric constant of the sample, with the doping amount increasing, the dielectric constant increases. The sintering temperature has also significant impact on the dielectric properties. The dielectric constant of the sample reaches its highest point at 1280 °C. (author)

Low temperature fabrication of barium titanate hybrid films and their dielectric properties

International Nuclear Information System (INIS)

Kobayashi, Yoshio; Saito, Hirobumi; Kinoshita, Takafumi; Nagao, Daisuke; Konno, Mikio

2011-01-01

A method for incorporating BT nano-crystalline into barium titanate (BT) films is proposed for a low temperature fabrication of high dielectric constant films. BT nanoparticles were synthesized by hydrolysis of a BT complex alkoxide in 2-methoxyethanol (ME)/ethanol cosolvent. As the ME volume fraction in the cosolvent (ME fraction) increased from 0 to 100%, the particle and crystal sizes tended to increase from 13.4 to 30.2 nm and from 15.8 to 31.4 nm, respectively, and the particle dispersion in the solution became more improved. The BT particles were mixed with BT complex alkoxide dissolved in an ME/ethanol cosolvent for preparing a precursor solution that was then spin-coated on a Pt substrate and dried at 150 o C. The dielectric constant of the spin-coated BT hybrid film increased with an increase in the volume fraction of the BT particles in the film. The dissipation factor of the hybrid film tended to decrease with an increase in the ME fraction in the precursor solution. The hybrid film fabricated at a BT fraction of 30% and an ME fraction of 25% attained a dielectric constant as high as 94.5 with a surface roughness of 14.0 nm and a dissipation factor of 0.11.

Gate dielectric strength dependent performance of CNT MOSFET and CNT TFET: A tight binding study

Directory of Open Access Journals (Sweden)

Md. Shamim Sarker

Full Text Available This paper presents a comparative study between CNT MOSFET and CNT TFET taking into account of different dielectric strength of gate oxide materials. Here we have studied the transfer characteristics, on/off current (ION/IOFF ratio and subthreshold slope of the device using Non Equilibrium Greens Function (NEGF formalism in tight binding frameworks. The results are obtained by solving the NEGF and Poisson’s equation self-consistently in NanoTCADViDES environment and found that the ON state performance of CNT MOSFET and CNT TFET have significant dependency on the dielectric strength of the gate oxide materials. The figure of merits of the devices also demonstrates that the CNT TFET is promising for high-speed and low-power logic applications. Keywords: CNT TFET, Subthreshold slop, Barrier width, Conduction band (C.B and Valance band (V.B, Oxide dielectric strength, Tight binding approach

Investigation of the annealing temperature effect on structural, morphology, dielectric and magnetic properties of BiFeO3 nanoparticles

Science.gov (United States)

Ranjbar, M.; Ghazi, M. E.; Izadifard, M.

2018-06-01

In this paper we have investigated the annealing temperature effect on the structure, morphology, dielectric and magnetic properties of sol-gel synthesized multiferroic BiFeO3 nanoparticles. X-ray diffraction spectroscopy revealed that all the samples have rhombohedrally distorted perovskite structure and the most pure BFO phase is obtained on the sample annealed at 800 °C. Field emission scanning electron microscopy (FESEM) revealed that increasing annealing temperature would increase the particle size. Decrease in dielectric constant was also observed by increasing annealing temperature. Vibrating sample method (VSM) analysis confirmed that samples annealed at 500-700 °C with particle size below the BFO's spiral spin structure length, have well saturated M-H curve and show ferromagnetic behavior.

Electrophysical properties of microalloyed alumo-silicate ceramics as active dielectric

Directory of Open Access Journals (Sweden)

Purenović Jelena

2013-01-01

Full Text Available In this paper, electrophysical properties of porous alumo-silicate ceramics, modified by alloying with magnesium and microalloying with aluminum, were investigated. Complex multiphase system, as active microalloyed ceramics, has specific behavior under influence of external electrical field, which involves changes of dielectric losses and impedance, depending on frequency and temperature. Dielectric properties were measured in the frequency range 20 Hz - 1 MHz. Values for permittivity (εr ranged between 140 - 430. Order of magnitude for electrical resistivity was about 106 Ωm, for impedance 104 - 108 Ω, and loss tangent had values about and greater than 0.05. Current flow through active dielectric takes place through dielectric barrier and throughout conduction bands of thin aluminum and magnesium metal films. Permittivity has nonlinear distribution and complex functional dependences because of significant nonhomogeneity of active microalloyed ceramics. Lower values of electrical resistivity are the result of complex electron and ion transfer of charge through solid phase and pores, with decreased potential barriers height, due to the influence of additives, ingredients and defects. [Projekat Ministarstva nauke Republike Srbije, br. III 45012 i br. ON 172057

A New Vogel-Like Law: Ionic Conductivity, Dielectric Relaxation and Viscosity Near the Glass Transition

National Research Council Canada - National Science Library

Bendler, John

2001-01-01

A model, based on defect diffusion, is developed that describes temperature and pressure dependence of dielectric relaxation, ionic conductivity and viscosity of glass-forming liquids near the glass...

Dielectric analysis of depth dependent curing behavior of dental resin composites.

Science.gov (United States)

Steinhaus, Johannes; Moeginger, Bernhard; Grossgarten, Mandy; Rosentritt, Martin; Hausnerova, Berenika

2014-06-01

The aim of this study is to investigate depth dependent changes of polymerization process and kinetics of visible light-curing (VLC) dental composites in real-time. The measured quantity - "ion viscosity" determined by dielectric analysis (DEA) - provides the depth dependent reaction rate which is correlated to the light intensity available in the corresponding depths derived from light transmission measurements. The ion viscosity curves of two composites (VOCO Arabesk Top and Grandio) were determined during irradiation of 40s with a light-curing unit (LCU) in specimen depths of 0.5/0.75/1.0/1.25/1.5/1.75 and 2.0mm using a dielectric cure analyzer (NETZSCH DEA 231 with Mini IDEX sensors). The thickness dependent light transmission was measured by irradiation composite specimens of various thicknesses on top of a radiometer setup. The shape of the ion viscosity curves depends strongly on the specimen thickness above the sensor. All curves exhibit a range of linear time dependency of the ion viscosity after a certain initiation time. The determined initiation times, the slopes of the linear part of the curves, and the ion viscosities at the end of the irradiation differ significantly with depth within the specimen. The slopes of the ion viscosity curves as well as the light intensity values decrease with depth and fit to the Lambert-Beer law. The corresponding attenuation coefficients are determined for Arabesk Top OA2 to 1.39mm(-1) and 1.48mm(-1), respectively, and for Grandio OA2 with 1.17 and 1.39mm(-1), respectively. For thicknesses exceeding 1.5mm a change in polymerization behavior is observed as the ion viscosity increases subsequent to the linear range indicating some kind of reaction acceleration. The two VLC composites and different specimen thicknesses discriminate significantly in their ion viscosity evolution allowing for a precise characterization of the curing process even with respect to the polymerization mechanism. Copyright © 2014. Published by

Electrical modulus and dielectric behavior of Cr{sup 3+} substituted Mg–Zn nanoferrites

Energy Technology Data Exchange (ETDEWEB)

Mansour, S.F.; Abdo, M.A.

2017-04-15

The dielectric parameters and ac electrical conductivity of Mg{sub 0.8}Zn{sub 0.2}Cr{sub x}Fe{sub 2−x}O{sub 4}; (0≤x≤0.025) nanoferrites synthesized citrate–nitrate auto-combustion method were studied using the complex impedance technique in the frequency and temperature ranges 4 Hz–5 MHz and 303–873 K respectively. Hopping of charge carriers plus interfacial polarization could interpret the behaviors of dielectric constant (ε′), dielectric loss tangent (tanδ) and ac electrical conductivity (σ{sub ac}) with frequency, temperatures and composition. The up-normal behavior observed in tanδ trend with temperatures confirms the presence of relaxation loss (dipoles losses). Correlated barrier hopping (CBH) of electron is the conduction mechanism of the investigated nanoferrites. Cole-Cole plots at different temperatures emphasize the main role of grain and grain boundaries in the properties of the investigated nanoferrites. Cr{sup 3+} substitution can control the dielectric parameters and ac electrical conductivity of Mg-Zn nanoferrites making it candidates for versatile applications. - Highlights: • The composition dependence of ε′, tanδ, and σ{sub ac} showed the same trend. • CBH model is the conduction mechanism of the investigated nanoferrite. • Cole-Cole plots confirmed the role of grain and grain boundaries in our nanoferrites.

Temperature fields occurring in dielectric capillaries for the transport of of ion beams

International Nuclear Information System (INIS)

Urbanovich, A.I.

2012-01-01

This paper presents the results of computing the temperature fields occurring in dielectric capillaries of glass for the transport of accelerated charged particles. It is shown that on the transport of ion beams with a power of several watts the capillary is heated intensively, whereas heat stresses may approach the lower bound associated with a real strength of glass. (authors)

The Dielectric Behavior of Cyano-Substituted Poly imides

International Nuclear Information System (INIS)

Elshazly, E.S.; Abdelrahman, A.A.M.; Elmasry, M.A.A.

2013-01-01

A number of amorphous poly imides containing polar functional groups, cyano group, have been synthesized and investigated for potential use as high temperature piezoelectric sensors. The piezoelectric constants are related to the polarization. The remanent polarization and hence piezoelectric response of a material is determined by dielectric relaxation strength which is the difference in dielectric constant at the glass transition temperature vicinity. The intent of this work is to clarify the mechanism and key components required for developing piezoelectricity in amorphous polymers and further to apply this understanding in designing a unique high temperature piezoelectric polyimide. In this paper, experimental investigations of dielectric constant of piezoelectric cyano -substituted poly imides have been tested as a function of temperature to measure the dielectric relaxation strength in the glass transition temperature region.

Dielectric behavior of MgO:Li+ crystals

International Nuclear Information System (INIS)

Puma, M.; Lorincz, A.; Andrews, J.F.; Crawford, J.H Jr.

1980-01-01

Measurements of the dielectric constant in crystals of MgO doped with Li + ions have been carried out after quenching from anneals at 1300 0 C in static air. Prior to heat treatment the crystals showed no discernible dielectric loss but afterwards the loss tangent exceeded 0.4. For 10 min anneals the dielectric relaxation is very close to a Debye process and the temperature dependence of the maximum of the loss peak corresponds to an activation energy of 0.72 eV. When plotted in the form of a Cole-Cole arc the data indicate that deviation from a Debye relaxation amounts to a distribution of relaxation time no greater than that which can be accounted for with a distribution of activation energies only 0.007 eV. For longer heating times overlapping relaxation processes appear. The lack of broadening of the loss peak and the magnitude of the relaxation time yield clues as to possible loss mechanisms

Dielectric behavior of MgO:Li+ crystals

International Nuclear Information System (INIS)

Puma, M.; Lorincz, A.; Andrews, J.F.; Crawford, J.H. Jr.

1982-01-01

Measurements of the dielectric constant in crystals of MgO doped with Li + ions have been carried out after quenching from anneals at 1300 0 C in static air. Prior to heat treatment, the crystals showed no discernible dielectric loss, but afterwards, the loss tangent exceeded 0.4. For 10-min anneals, the dielectric relaxation is very close to a Debye process, and the temperature dependence of the maximum of the loss peak corresponds to an activation energy of 0.724 eV. When plotted in the form of a Cole-Cole arc, the data indicate that deviation from a Debye relaxation amounts to a distribution of relaxation time no greater than that which can be accounted for with a distribution of activation energies of only 0.007 eV. For longer heating times, overlapping relaxation processes appear. The lack of broadening of the loss peak, and the magnitude of the relaxation time, yield clues as to possible loss mechanisms

Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

Science.gov (United States)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

2014-02-01

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi5Ti3FeO15 ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200-873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property.

Thermotropic phase transitions in Pb{sub 1−x}Sr{sub x}(Al{sub 1/3}Nb{sub 2/3}){sub 0.1}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.9}O{sub 3} ceramics: Temperature dependent dielectric permittivity and Raman scattering

Energy Technology Data Exchange (ETDEWEB)

Li, C. Q.; Peng, L.; Jiang, K.; Hu, Z. G., E-mail: zghu@ee.ecnu.edu.cn; Chu, J. H. [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China); Wang, P.; Liu, A. Y. [Department of Physics, Shanghai Normal University, Shanghai 200234 (China)

2015-06-15

The phase transitions of Pb{sub 1−x}Sr{sub x}(Al{sub 1/3}Nb{sub 2/3}){sub 0.1}(Zr{sub 0.52}Ti{sub 0.48}){sub 0.9}O{sub 3} (Sr-modified PAN-PZT) ceramics with Sr compositions of x = 2%, 5%, 10% and 15% have been investigated using X-ray diffraction (XRD), temperature dependent dielectric permittivity and Raman scattering. The XRD analysis show that the phase transition occurs between Sr composition of 5% and 10%. Based on the broad dielectric peaks at 100 Hz, the diffused phase transition from tetragonal (T) to cubic (C) structure shifts to lower temperature with increasing Sr composition. The dramatic changes of wavenumber and full width at half-maximum (FWHM) for E(TO{sub 4})′ softing mode can be observed at morphotropic phase boundary (MPB). Moreover, the MPB characteristic shows a wider and lower trend of temperature region with increasing Sr composition. It could be ascribed to the diminishment of the energy barrier and increment of A-cation entropy. Therefore, the Sr-modified PAN-PZT ceramics unambiguously undergo two successive structural transitions (rhombohedral-tetragonal-cubic phase) with temperature from 80 to 750 K. Correspondingly, the phase diagram of Sr-modified PAN-PZT ceramics can be well depicted.

Optofluidic intracavity spectroscopy for spatially, temperature, and wavelength dependent refractometry

Science.gov (United States)

Kindt, Joel D.

A microfluidic refractometer was designed based on previous optofluidic intracavity spectroscopy (OFIS) chips utilized to distinguish healthy and cancerous cells. The optofluidic cavity is realized by adding high reflectivity dielectric mirrors to the top and bottom of a microfluidic channel. This creates a plane-plane Fabry-Perot optical cavity in which the resonant wavelengths are highly dependent on the optical path length inside the cavity. Refractometry is a useful method to determine the nature of fluids, including the concentration of a solute in a solvent as well as the temperature of the fluid. Advantages of microfluidic systems are the easy integration with lab-on-chip devices and the need for only small volumes of fluid. The unique abilities of the microfluidic refractometer in this thesis include its spatial, temperature, and wavelength dependence. Spatial dependence of the transmission spectrum is inherent through a spatial filtering process implemented with an optical fiber and microscope objective. A sequence of experimental observations guided the change from using the OFIS chip as a cell discrimination device to a complimentary refractometer. First, it was noted the electrode structure within the microfluidic channel, designed to trap and manipulate biological cells with dielectrophoretic (DEP) forces, caused the resonant wavelengths to blue-shift when the electrodes were energized. This phenomenon is consistent with the negative dn/dT property of water and water-based solutions. Next, it was necessary to develop a method to separate the optical path length into physical path length and refractive index. Air holes were placed near the microfluidic channel to exclusively measure the cavity length with the known refractive index of air. The cavity length was then interpolated across the microfluidic channel, allowing any mechanical changes to be taken into account. After the separation of physical path length and refractive index, it was of interest

Thermal dielectric function

International Nuclear Information System (INIS)

Moneta, M.

1999-01-01

Thermal dielectric functions ε(k,ω) for homogeneous electron gas were determined and discussed. The ground state of the gas is described by the Fermi-Dirac momentum distribution. The low and high temperature limits of ε(k,ω) were related to the Lindhard dielectric function and to ε(k, omega) derived for Boltzmann and for classical momentum distributions, respectively. (author)

Temperature Dependence of the Resonant Magnetoelectric Effect in Layered Heterostructures

Directory of Open Access Journals (Sweden)

Dmitrii A. Burdin

2017-10-01

Full Text Available The dependence of the resonant direct magnetoelectric effect on temperature is studied experimentally in planar composite structures. Samples of rectangular shapes with dimensions of 5 mm × 20 mm employed ferromagnetic layers of either an amorphous (metallic glass alloy or nickel with a thickness of 20–200 μm and piezoelectric layers of single crystalline langatate material or lead zirconate titanate piezoelectric ceramics with a thickness of 500 μm. The temperature of the samples was varied in a range between 120 and 390 K by blowing a gaseous nitrogen stream around them. It is shown that the effective characteristics of the magnetoelectric effect—such as the mechanical resonance frequency fr, the quality factor Q and the magnitude of the magnetoelectric coefficient αE at the resonance frequency—are contingent on temperature. The interrelations between the temperature changes of the characteristics of the magnetoelectric effect and the temperature variations of the following material parameters—Young’s modulus Y, the acoustic quality factor of individual layers, the dielectric constant ε, the piezoelectric modulus d of the piezoelectric layer as well as the piezomagnetic coefficients λ(n of the ferromagnetic layer—are established. The effect of temperature on the characteristics of the nonlinear magnetoelectric effect is observed for the first time. The results can be useful for designing magnetoelectric heterostructures with specified temperature characteristics, in particular, for the development of thermally stabilized magnetoelectric devices.

A Simple Generator of Forward Scattering Functions on Spherical Dielectrics

Directory of Open Access Journals (Sweden)

O. Fiser

1993-04-01

Full Text Available The described program generates the forward scattering functions of dielectrics of spherical shape, while the input parameters are: frequency, radius of the sphere and complex refractive index. The part enabling to evaluate the complex refractive index of water in the dependence on frequency and temperature is added.

Dielectrically-Loaded Cylindrical Resonator-Based Wireless Passive High-Temperature Sensor

Directory of Open Access Journals (Sweden)

Jijun Xiong

2016-12-01

Full Text Available The temperature sensor presented in this paper is based on a microwave dielectric resonator, which uses alumina ceramic as a substrate to survive in harsh environments. The resonant frequency of the resonator is determined by the relative permittivity of the alumina ceramic, which monotonically changes with temperature. A rectangular aperture etched on the surface of the resonator works as both an incentive and a coupling device. A broadband slot antenna fed by a coplanar waveguide is utilized as an interrogation antenna to wirelessly detect the sensor signal using a radio-frequency backscattering technique. Theoretical analysis, software simulation, and experiments verified the feasibility of this temperature-sensing system. The sensor was tested in a metal-enclosed environment, which severely interferes with the extraction of the sensor signal. Therefore, frequency-domain compensation was introduced to filter the background noise and improve the signal-to-noise ratio of the sensor signal. The extracted peak frequency was found to monotonically shift from 2.441 to 2.291 GHz when the temperature was varied from 27 to 800 °C, leading to an average absolute sensitivity of 0.19 MHz/°C.

2 filler on the dielectric permittivity and electrical modulus of PMMA

Indian Academy of Sciences (India)

The real and imaginary part of the dielectric permittivity decreased with the increase in frequency but increased with temperature. The electrical conductivity measurement showed a plateau-like behaviour in the low-frequency region and dispersion in the high-frequency region. The frequency-dependent electrical modulus ...

Dielectric properties of the ITER TFMC insulation after low temperature reactor irradiation

International Nuclear Information System (INIS)

Humer, K.; Weber, H.W.; Hastik, R.; Hauser, H.; Gerstenberg, H.

2001-01-01

The insulation system for the Toroidal Field Model Coil of ITER is a fiber reinforced plastic (FRP) laminate, which consists of a combined Kapton/R-glass-fiber reinforcement tape, vacuum-impregnated with an epoxy DGEBA system. Pure disk shaped laminates, disk shaped FRP/stainless-steel sandwiches, and conductor insulation prototypes were irradiated at 5 K in a fission reactor up to a fast neutron fluence of 10 22 m -2 (E>0.1MeV) to investigate the radiation induced degradation of the dielectric strength of the insulation system. After warm-up to room temperature, swelling, weight loss, and the breakdown strength were measured at 77 K. The sandwich swells by 4% at a fluence of 5x10 21 m -2 and by 9% at 1x10 22 m -2 . The weight loss of the FRP is 2% at 1x10 22 m -2 . The dielectric strength remained unchanged over the whole dose range. (author)

Investigation of the dielectric recovery in synthetic air in a high voltage circuit breaker

International Nuclear Information System (INIS)

Seeger, M; Naidis, G; Steffens, A; Nordborg, H; Claessens, M

2005-01-01

The dielectric recovery of an axially blown arc in an experimental set-up based on a conventional HV circuit breaker was investigated both experimentally and theoretically. As a quenching gas, synthetic air was used. The investigated time range was from 10 μs to 10 ms after current zero (CZ). A fast rise in the dielectric strength during the first 100 μs, followed by a plateau and further rise later was observed. The dependences on the breaking current and pressure were determined. The measured dielectric recovery during the first 100 μs after CZ could be reproduced with good accuracy by computational fluid dynamics simulations. From that it could be deduced that the temperature decay in the axis does not depend sensitively on the pressure. The dielectric recovery during the first 100 μs scales therefore mainly with the filling pressure. The plateau in the breakdown characteristic is due to a hot vapour layer from the still evaporating PTFE nozzle surface

Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

Energy Technology Data Exchange (ETDEWEB)

Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

2016-06-07

The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

Dielectric relaxation in Yb-doped SrZrO3

International Nuclear Information System (INIS)

Kamishima, O; Abe, Y; Ishii, T; Kawamura, J; Hattori, T

2004-01-01

The dielectric constant of the proton conductor SrZr 1-x Yb x O 3 (x 0-0.1) was measured as a function of temperature and frequency. Two well-defined relaxation peaks were observed in SrZrO 3 doped with more than 1 mol% of Yb. The assignment of the two dielectric relaxations is discussed in terms of IR spectra and by free energy calculation for a miscibility of dopant Yb ions. The Yb concentration dependence of the relaxation strength of the two dielectric relaxations is in agreement with the results calculated from the free energy. The two relaxations can be assigned to a reorientation of a single Yb-OH dipole and of Yb-OH dipoles associated with Yb-clusters. The attractive energy for Yb-clustering in SrZrO 3 is evaluated at about -85 meV

Study of the pressure dependence of dielectric properties of ionic crystals with the exchange-charge model

Energy Technology Data Exchange (ETDEWEB)

Batana, A; Faour, J

1987-03-01

The formalism of the exchange-charge model (ECM) is extended for studying the pressure dependence of the static dielectric constant and the volume dependence of the effective ionic charge for b.c.c. lattices. Calculated values for CsCl, CsBr, CsI, and TlBr together with the simple shell model values and experimental values are listed and discussed.

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

2015-07-13

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

Radiation Characteristics Enhancement of Dielectric Resonator Antenna Using Solid/Discrete Dielectric Lenses

Directory of Open Access Journals (Sweden)

H. A. E. Malhat

2015-02-01

Full Text Available The radiation characteristics of the dielectric resonator antennas (DRA is enhanced using different types of solid and discrete dielectric lenses. One of these approaches is by loading the DRA with planar superstrate, spherical lens, or by discrete lens (transmitarray. The dimensions and dielectric constant of each lens are optimized to maximize the gain of the DRA. A comparison between the radiations characteristics of the DRA loaded with different lenses are introduced. The design of the dielectric transmitarray depends on optimizing the heights of the dielectric material of the unit cell. The optimized transmitarray achieves 7 dBi extra gain over the single DRA with preserving the circular polarization. The proposed antenna is suitable for various applications that need high gain and focused antenna beam.

Influence of O{sub 2} on the dielectric properties of CO{sub 2} at the elevated temperatures

Energy Technology Data Exchange (ETDEWEB)

Rong, Mingzhe; Sun, Hao; Yang, Fei, E-mail: yfei2007@mail.xjtu.edu.cn; Wu, Yi, E-mail: wuyic51@mail.xjtu.edu.cn; Chen, Zhexin; Wang, Xiaohua; Wu, Mingliang [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an Shaanxi 710049 (China)

2014-11-15

SF{sub 6} gas is widely used in the high voltage circuit breakers but considering its high global warming potential other substitutes are being sought. Among them CO{sub 2} was investigated and even has been used in some practical products. However, at room temperature, the dielectric properties of CO{sub 2} are relatively lower than SF{sub 6} and air. The goal of this work is to investigate a CO{sub 2}-based gas to improve the performance of the pure CO{sub 2}. In this paper, the dielectric properties of hot CO{sub 2}/O{sub 2} mixtures related to the dielectric recovery phase of the circuit breaker were investigated in the temperature range from 300 K to 4000 K and in the pressure range from 0.01 MPa to 1.0 MPa. The species compositions of hot CO{sub 2}/O{sub 2} were obtained based on Gibbs free energy minimization under the assumptions of local thermodynamic equilibrium and local chemical equilibrium. The reduced critical electric field strength of CO{sub 2}/O{sub 2} was determined by balancing electron generation and loss. These were calculated using the electron energy distribution function by solving the Boltzmann transport equation. The validity of the calculation method and the cross sections data was confirmed by comparing the measurements and calculations of the electron swarm data in previous work. The results indicate that in pure CO{sub 2} the critical electric field strength is higher only in higher temperature range. By adding the O{sub 2} into the CO{sub 2}, the critical electric field strength at lower temperature is effectively enhanced. CO{sub 2}/O{sub 2} mixtures have a much better dielectric strength than both the pure CO{sub 2} and air and thus have the potential to improve the CO{sub 2}-based gas circuit breakers. Similar conclusions can also be found in others’ work, which further confirm the validity of these results.

A Novel Temperature Measurement Approach for a High Pressure Dielectric Barrier Discharge Using Diode Laser Absorption Spectroscopy (Preprint)

National Research Council Canada - National Science Library

Leiweke, R. J; Ganguly, B. N

2006-01-01

A tunable diode laser absorption spectroscopic technique is used to measure both electronically excited state production efficiency and gas temperature rise in a dielectric barrier discharge in argon...

Origin of colossal dielectric permittivity of rutile Ti₀.₉In₀.₀₅Nb₀.₀₅O₂: single crystal and polycrystalline.

Science.gov (United States)

Song, Yongli; Wang, Xianjie; Sui, Yu; Liu, Ziyi; Zhang, Yu; Zhan, Hongsheng; Song, Bingqian; Liu, Zhiguo; Lv, Zhe; Tao, Lei; Tang, Jinke

2016-02-12

In this paper, we investigated the dielectric properties of (In + Nb) co-doped rutile TiO2 single crystal and polycrystalline ceramics. Both of them showed colossal, up to 10(4), dielectric permittivity at room temperature. The single crystal sample showed one dielectric relaxation process with a large dielectric loss. The voltage-dependence of dielectric permittivity and the impedance spectrum suggest that the high dielectric permittivity of single crystal originated from the surface barrier layer capacitor (SBLC). The impedance spectroscopy at different temperature confirmed that the (In + Nb) co-doped rutile TiO2 polycrystalline ceramic had semiconductor grains and insulating grain boundaries, and that the activation energies were calculated to be 0.052 eV and 0.35 eV for grain and grain boundary, respectively. The dielectric behavior and impedance spectrum of the polycrystalline ceramic sample indicated that the internal barrier layer capacitor (IBLC) mode made a major contribution to the high ceramic dielectric permittivity, instead of the electron-pinned defect-dipoles.

Ceramic-polymer nanocomposites with increased dielectric permittivity and low dielectric loss

International Nuclear Information System (INIS)

Bhardwaj, Sumit; Paul, Joginder; Raina, K. K.; Thakur, N. S.; Kumar, Ravi

2014-01-01

The use of lead free materials in device fabrication is very essential from environmental point of view. We have synthesized the lead free ferroelectric polymer nanocomposite films with increased dielectric properties. Lead free bismuth titanate has been used as active ceramic nanofillers having crystallite size 24nm and PVDF as the polymer matrix. Ferroelectric β-phase of the polymer composite films was confirmed by X-ray diffraction pattern. Mapping data confirms the homogeneous dispersion of ceramic particles into the polymer matrix. Frequency dependent dielectric constant increases up to 43.4 at 100Hz, whereas dielectric loss decreases with 7 wt% bismuth titanate loading. This high dielectric constant lead free ferroelectric polymer films can be used for energy density applications

Dielectric properties, impedance analysis and modulus behavior of CaTiO{sub 3} ceramic prepared by solid state reaction

Energy Technology Data Exchange (ETDEWEB)

Wong, Y.J., E-mail: yjeng_86@hotmail.com [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hassan, J., E-mail: jumiah@science.upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Hashim, M., E-mail: mansor@science.upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Advanced Materials and Nanotechnology Laboratory, Institute of Advanced Technology (ITMA), Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

2013-09-15

Highlights: •A single phase orthorhombic CaTiO{sub 3} structure with sub-micron grains is produced. •The frequency exponent ‘s’ is temperature dependent and explained by CBH model. •The dielectric constant and loss tangent are frequency and temperature dependent. •The modulus plot reveals the presence of thermally activated dielectric relaxation. •Cole-cole plot reveals two primary relaxation processes exist in the sample. -- Abstract: Calcium titanate (CaTiO{sub 3}) with the general formula for perovskites, ABO{sub 3}, is of technological importance, particularly with regard to dielectric properties. In this work, CaTiO{sub 3} ceramic material was prepared by the conventional solid state reaction method. The dielectric properties, impedance characteristics and modulus behavior of the CaTiO{sub 3} ceramic material sintered at 1240 °C were investigated in the frequency range of 10{sup −2}–10{sup 6} Hz and temperature range of 100–250 °C. The XRD analysis of the sintered CaTiO{sub 3} shows that it is an orthorhombic structure with lattice parameters a = 5.4398 Å, b = 7.6417 Å, and c = 5.3830 Å. The FESEM micrograph shows a significant difference in grain size distribution ranging from 0.26 to 2.32 μm. The AC conductivity, σ{sub AC}, is found to increase with increasing temperature within the frequency range of 10{sup −2}–10{sup 6} Hz confirming the hopping of electrons to be the conduction mechanism. Due to the decreasing values of the frequency exponent s with increasing temperature, the results of the σ{sub AC} are discussed using the correlated barrier height (CBH) model. For dielectric studies, the dielectric constant, ε′ is found to decrease with increasing frequency. In the whole temperature range of 100–250 °C, high and low frequency plateau are observed. Each converges at high frequency (>10{sup 5} Hz) for all the temperatures. The frequency dependence of loss tangent, tan δ, decreases with rise in temperature, with the

X-ray diffraction and dielectric studies across morphotropic phase boundary in (1 - x) [Pb(Mg0.5W0.5)O3]-xPbTiO3 ceramics

International Nuclear Information System (INIS)

Singh, A.K.; Singh, Akhilesh Kumar

2011-01-01

Research highlights: → Structural studies reveal pseudocubic structure of PMW-xPT for the x ≤ 0.42, tetragonal for the x ≥ 0.72 and the coexistences of the two phases for intermediate compositions (0.46 ≤ x 0.68). → Temperature dependent dielectric constant for compositions in the two phase region shows two dielectric anomalies above room temperature and not just one as reported by earlier workers. → Rietveld structural analysis of PMW-xPT ceramics is presented for the first time to determine the fraction of the coexisting phases in MPB region. - Abstract: We present here the results of comprehensive X-ray diffraction and dielectric studies on several compositions of (1 - x)[Pb(Mg 0.5 W 0.5 )O 3 ]-xPbTiO 3 (PMW-xPT) solid solution across the morphotropic phase boundary. Rietveld analysis of the powder X-ray diffraction data reveals cubic (space group Fm3m) structure of PMW-xPT ceramics for the compositions with x ≤ 0.42, tetragonal (space group P4mm) structure for the compositions with x ≥ 0.72 and coexistence of the tetragonal and cubic phases for the intermediate compositions (0.46 ≤ x ≤ 0.68). Temperature dependence of the dielectric permittivity above room temperature exhibits diffuse nature of phase transitions for the compositions in the cubic and two phase region while the compositions with tetragonal structure at room temperature exhibit sharp ferroelectric to paraelectric phase transition. The PMW-xPT compositions with coexistence of tetragonal and cubic phases at room temperature exhibit two anomalies in the temperature dependence of the dielectric permittivity above room temperature. Using results of structural and dielectric studies a partial phase diagram of PMW-xPT ceramics is also presented.

A model for temperature dependent resistivity of metallic superlattices

Directory of Open Access Journals (Sweden)

J. I. Uba

2015-11-01

Full Text Available The temperature dependent resistivity of metallic superlattices, to first order approximation, is assumed to have same form as bulk metal, ρ(T = ρo + aT, which permits describing these structures as linear atomic chain. The assumption is, substantiated with the derivation of the above expression from the standard magnetoresistance equation, in which the second term, a Bragg scattering factor, is a correction to the usual model involving magnon and phonon scatterings. Fitting the model to Fe/Cr data from literature shows that Bragg scattering is dominant at T < 50 K and magnon and phonon coefficients are independent of experiment conditions, with typical values of 4.7 × 10−4 μΩcmK−2 and −8 ± 0.7 × 10−7μΩcmK−3. From the linear atomic chain model, the dielectric constant ε q , ω = 8 . 33 × 10 − 2 at Debye frequency for all materials and acoustic speed and Thomas – Fermi screening length are pressure dependent with typical values of 1.53 × 104 m/s and 1.80 × 109 m at 0.5 GPa pressure for an Fe/Cr structure.

The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

Energy Technology Data Exchange (ETDEWEB)

Engelbrecht, J.A.A., E-mail: Japie.Engelbrecht@nmmu.ac.za [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Deyzel, G.; Minnaar, E.G.; Goosen, W.E. [Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Rooyen, I.J. van [Fuel Performance and Design Department, Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-6188 (United States)

2014-04-15

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC

International Nuclear Information System (INIS)

Engelbrecht, J.A.A.; Deyzel, G.; Minnaar, E.G.; Goosen, W.E.; Rooyen, I.J. van

2014-01-01

3C-SiC wafers were irradiated with neutrons of various fluences and at low (200–400 °C) irradiation temperatures. Fourier transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.

Phase transformation in multiferroic Bi5Ti3FeO15 ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

International Nuclear Information System (INIS)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

2014-01-01

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi 5 Ti 3 FeO 15 ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200–873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property

Influence of Sn doping in BaSnxTi1-xO3 ceramics on microstructural and dielectric properties

Science.gov (United States)

Ansari, Mohd. Azaj; Sreenivas, K.

2018-05-01

BaSnxTi1-x O3 solid solutions with varying Sn content (x = 0.00, 0.05, 0.15, 0.25) prepared by solid state reaction method have been studied for their structural and dielectric properties. X-ray diffraction and Raman spectroscopic analysis show composition induced modifications in the crystallographic structure, and with increasing Sn content the structure changes from tetragonal to cubic structure. The tetragonal distortion decreases with increasing Sn, and the structure becomes purely cubic for x =0.25. Changes in the structure are reflected in the temperature dependent dielectric properties. For increasing Sn content the peak dielectric constant is found to increase and the phase transition temperature (Tc) decreases to lower temperature. The purely cubic structure with x=0.25 shows a diffused phased transition.

Semiconductor-to-metallic flipping in a ZnFe{sub 2}O{sub 4}–graphene based smart nano-system: Temperature/microwave magneto-dielectric spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Ameer, Shahid, E-mail: shahidameer@scme.nust.edu.pk [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Gul, Iftikhar Hussain [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan); Mahmood, Nasir [Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871 (China); Mujahid, Muhammad [School of Chemical and Materials Engineering (SCME), National University of Sciences and Technology (NUST), H-12, Islamabad (Pakistan)

2015-01-15

Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis with different percentages of graphene. The structure of the nanocomposite was confirmed through X-ray diffraction, micro-Raman scattering spectroscopy, Ultraviolet–Visible spectroscopy, and Fourier transform infrared spectroscopy. The structural growth and morphological aspects were analyzed using scanning/transmission electron microscopy, revealing marvelous micro-structural features of the assembled nano-system resembling a maple leaf. To determine the composition, energy dispersive spectroscopy and X-ray photoelectron spectroscopy were used. Microwave magneto-dielectric spectroscopy revealed the improved dielectric properties of the nano-composite compared to those of the parent functional nanocrystals. Temperature gradient dielectric spectroscopy was used over the spectral range from 100 Hz to 5 MHz to reveal the phenomenological effect that the nanosystem flips from its usual semiconductor nature to a metallic nature with sensing temperature. Electrical conductivity and dielectric analysis indicated that the dielectric loss and the dielectric permittivity increased at room temperature. This extraordinary switching capability of the functionalized graphene nanosystem opens up a new dimension for engineering advanced and efficient smart composite materials. - Graphical abstract: Display Omitted - Highlights: • Zn-(FeO{sub 2}){sub 2}–graphene smart nano-composites were synthesized using a novel modified solvothermal synthesis. • The synthesized nano-system exhibits marvelous leaf like microstructure. • These nano-composites show improved magneto dielectric response. • This engineered smart nano-system shows phenomenological flipping from semiconductor like nature to metallic behavior.

Temperature dependent dielectric and magnetic properties of GdFe{sub 1−x}Ni{sub x}O{sub 3} (0.0 ≤ x ≤ 0.3) orthoferrites

Energy Technology Data Exchange (ETDEWEB)

Kaur, Pawanpreet, E-mail: merry2286@gmail.com; Sharma, K. K., E-mail: kknitham@gmail.com; Pandit, Rabia [Department of Physics, National Institute of Technology, Himachal Pradesh, Hamirpur 177005 (India); Kumar, Ravi [Centre for Material Science and Engineering, National Institute of Technology, Himachal Pradesh, Hamirpur 177005 (India); Kotnala, R. K.; Shah, Jyoti [National Physical Laboratory, New Delhi 110012 (India)

2014-06-14

The polycrystalline samples of GdFe{sub 1−x}Ni{sub x}O{sub 3} (x = 0.0, 0.1, 0.2, 0.3) orthoferrites are synthesized via solid state reaction route. The Rietveld fitted X-ray diffraction patterns confirm the formation of orthorhombic phase with Pbnm space group for all the samples. The dielectric measurements reveal an enhancement in dielectric constant and tangent loss with increase in both temperature as well as Nickel (Ni) substitution. Dielectric studies are also in support with the induction of delocalized charge carriers in the GdFeO{sub 3} matrix with increasing Ni doping. Magnetization versus applied field study shows the non-saturating hysteresis curves suggesting the canted type antiferromagnetic behavior in the considered orthoferrites. Moreover, the observed magnetic behavior is complex and the doping affects the magnitude of magnetization differently at 300 K and 80 K. It has further been noticed that the incorporated Ni{sup 3+} ions enhances the symmetry of the magnetization curves. The as-prepared samples may find their applications in the decoupling capacitors.

Enhanced magnetic and dielectric behavior in Co doped BiFeO{sub 3} nanoparticles

Energy Technology Data Exchange (ETDEWEB)

Chakrabarti, Kaushik; Sarkar, Babusona; Ashok, Vishal Dev [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032 (India); Chaudhuri, Sheli Sinha [Department of Electronics and Telecommunication Engineering, Jadavpur University, Kolkata-700032 (India); De, S.K., E-mail: msskd@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Kolkata-700032 (India)

2015-05-01

Magnetic and dielectric properties of Co doped BiFeO{sub 3} (BFO) nanoparticles (13 nm) have been investigated. The dopant Co{sup 2+} converts spherical morphology to cubic nanostructures. The significant changes in temperature dependence of magnetization may be due to magnetic disorder phase induced by divalent Co. The substitution of Fe by Co disrupts cycloidal spin structure of BFO and improves the ferromagnetic property. Enhancement of the saturation magnetization and coercivity by about 10 times in doped BFO are due to changes in morphology. High dielectric constant of about 670 and low loss at room temperature show Co doped BFO as promising material for multifunctional devices.

Raman spectroscopy and dielectric Studies of multiple phase transitions in ZnO:Ni

Science.gov (United States)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay; Scott, J. F.; Katiyar, R. S.

2008-03-01

We present Raman and dielectric data on Ni-doped ZnO (Zn1-xNixO) ceramics as a function of Ni concentration (x =0.03, 0.06, and 0.10) and temperature. A mode (around 130cm-1) is identified as TA(M) [J. M. Calleja and M. Cardona, Phys. Rev. B 16, 3753 (1977)] and appears due to an antiferromagnetic phase transition at low temperatures (100K) via the spin-orbit mechanism [P. Moch and C. Dugautier, Phys. Lett. A 43, 169 (1973)]. A strong dielectric anomaly occurs at around 430-460K, depending on Ni concentration, and is due to extrinsic electret effects (Ni ionic conduction) and not to a ferroelectric phase transition.

Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

Energy Technology Data Exchange (ETDEWEB)

Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

2016-05-01

In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

Directory of Open Access Journals (Sweden)

Hua Qi

2012-01-01

Full Text Available Our measurements of surface enhanced Raman scattering (SERS on Ga2O3 dielectric nanowires (NWs core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.

Structural and dielectric properties of barium strontium titanate produced by high temperature hydrothermal method

International Nuclear Information System (INIS)

Razak, K.A.; Asadov, A.; Yoo, J.; Haemmerle, E.; Gao, W.

2008-01-01

The preparation procedure, structural and dielectric properties of hydrothermally derived Ba x Sr 1-x TiO 3 (BST) were studied. BST with initial Ba compositions of 75, 80, 85 and 90 mol.% were prepared by a high temperature hydrothermal synthesis. The obtained powders were pressed into pellet, cold isostatically pressed and sintered at 1200 deg. C for 3 hours. The phase compositions and lattice parameters of the as prepared powders and sintered samples were analysed using X-ray diffractometry. A fitting software was used to analyse the XRD spectra to separate different phases. It was found that BST powder produced by the high temperature hydrothermal possessed a two-phase structure. This structure became more homogeneous during sintering due to interdiffusion but a small amount of minor phase can still be traced. Samples underwent an abnormal grain growth, whereby some grains grow faster than the other due to the presence of two-phase structure. The grain size increased with increasing Ba amount. Dielectric constant and polarisation increased with increasing Ba content but it was also affected by the electronic state and grain size of the compositions

A comparative study on thermal, mechanical and dielectric characteristics of low density polyethylene crosslinked by radiation and chemical methods

International Nuclear Information System (INIS)

Kim, B.H.; Ling, D.Y.; Kim, J.S.

1976-01-01

A comparative study on thermal, static mechanical and dielectric characteristics were made over a temperature range of ca. 20 0 C to 320 0 C and a frequency range of KHZ band on low density polyethylene specimens crosslinked, respectively, by radiation and chemical method. The thermal property of both specimens shows that softening point appears to unchange by crosslinking however, melting and liquidizing temperatures attain rapid increase at the imitation of crosslinking. Mechanical properties show little difference to both specimens crosslinked by different method, further the behaviors were discussed in connection with the relaxation of molecular segments in amorphous phase. Dose dependent dielectric characteristics observed at ambient temperature under several fixed frequencies exhibit extremities at ca. 20 Mrad and the behaviors also were interpreted qualitatively by taking into consideration of dipole concentration change in amorphous phase together with the role of specimen geometry to the depth of oxidative layer. Observing frequency dependent dielectric characteristics, it was also proved that ionic conduction loss is appreciably greater in the specimen prepared by chemical method than that by radiation. (author)

Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

Science.gov (United States)

Kao, T. H.; Mukherjee, S.; Yang, H. D.

2013-11-01

Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

High temperature dielectric and ferroelectric properties of La-modified PbTiO3 nanoceramics

International Nuclear Information System (INIS)

Shukla, Archana; Shukla, Namrata; Choudhary, R.N.P.

2016-01-01

Ferroelectric materials with high Curie temperature (higher than 300 °C) are highly desirable to construct transducers for high-temperature piezoelectric applications. Among the ferroelectric materials, PbTiO 3 (PT) is considered to be one of the most promising materials. However, the fabrication of high density pure PT ceramics is very difficult because of the highly anisotropy, which limited the use in piezoelectric transducers. Usually, substitutions towards A or B-site of PT may reduce the high anisotropy. The present work reports the experimental investigations on the effect of lanthanum (La 3+ ) substitution on the structural, dielectric and piezoelectric properties of lead titanate (PT) ceramic at high-temperature (RT ∼ 600°C)

Control of Evaporation Behavior of an Inkjet-Printed Dielectric Layer Using a Mixed-Solvent System

Science.gov (United States)

Yang, Hak Soon; Kang, Byung Ju; Oh, Je Hoon

2016-01-01

In this study, the evaporation behavior and the resulting morphology of inkjet-printed dielectric layers were controlled using a mixed-solvent system to fabricate uniform poly-4-vinylphenol (PVP) dielectric layers without any pinholes. The mixed-solvent system consisted of two different organic solvents: 1-hexanol and ethanol. The effects of inkjet-printing variables such as overlap condition, substrate temperature, and different printing sequences (continuous and interlacing printing methods) on the inkjet-printed dielectric layer were also investigated. Increasing volume fraction of ethanol (VFE) is likely to reduce the evaporation rate gradient and the drying time of the inkjet-printed dielectric layer; this diminishes the coffee stain effect and thereby improves the uniformity of the inkjet-printed dielectric layer. However, the coffee stain effect becomes more severe with an increase in the substrate temperature due to the enhanced outward convective flow. The overlap condition has little effect on the evaporation behavior of the printed dielectric layer. In addition, the interlacing printing method results in either a stronger coffee stain effect or wavy structures of the dielectric layers depending on the VFE of the PVP solution. All-inkjet-printed capacitors without electrical short circuiting can be successfully fabricated using the optimized PVP solution (VFE = 0.6); this indicates that the mixed-solvent system is expected to play an important role in the fabrication of high-quality inkjet-printed dielectric layers in various printed electronics applications.

Frequency Dependence of C-V Characteristics of MOS Capacitors Containing Nanosized High-κ Ta2O5 Dielectrics

Directory of Open Access Journals (Sweden)

Nenad Novkovski

2017-01-01

Full Text Available Capacitance of metal–insulator–Si structures containing high permittivity dielectric exhibits complicated behaviour when voltage and frequency dependencies are studied. From our study on metal (Al, Au, W–Ta2O5/SiO2–Si structures, we identify serial C-R measurement mode to be more convenient for use than the parallel one usually used in characterization of similar structures. Strong frequency dependence that is not due to real variations in the dielectric permittivity of the layers is observed. Very high capacitance at low frequencies is due to the leakage in Ta2O5 layer. We found that the above observation is mainly due to different leakage current mechanisms in the two different layers composing the stack. The effect is highly dependent on the applied voltage, since the leakage currents are strongly nonlinear functions of the electric field in the layers. Additionally, at low frequencies, transition currents influence the measured value of the capacitance. From the capacitance measurements several parameters are extracted, such as capacitance in accumulation, effective dielectric constant, and oxide charges. Extracting parameters of the studied structures by standard methods in the case of high-κ/interfacial layer stacks can lead to substantial errors. Some cases demonstrating these deficiencies of the methods are presented and solutions for obtaining better results are proposed.

Microstructure and Dielectric Properties of LPCVD/CVI-SiBCN Ceramics Annealed at Different Temperatures

Directory of Open Access Journals (Sweden)

Jianping Li

2017-06-01

Full Text Available SiBCN ceramics were introduced into porous Si3N4 ceramics via a low-pressure chemical vapor deposition and infiltration (LPCVD/CVI technique, and then the composite ceramics were heat-treated from 1400 °C to 1700 °C in a N2 atmosphere. The effects of annealing temperatures on microstructure, phase evolution, dielectric properties of SiBCN ceramics were investigated. The results revealed that α-Si3N4 and free carbon were separated below 1700 °C, and then SiC grains formed in the SiBCN ceramic matrix after annealing at 1700 °C through a phase-reaction between free carbon and α-Si3N4. The average dielectric loss of composites increased from 0 to 0.03 due to the formation of dispersive SiC grains and the increase of grain boundaries.

Epoxy matrix with triaromatic mesogenic unit in dielectric spectroscopy observation

Science.gov (United States)

Włodarska, Magdalena; Mossety-Leszczak, Beata; Bąk, Grzegorz W.; Kisiel, Maciej; Dłużniewski, Maciej; Okrasa, Lidia

2018-04-01

This paper describes the dielectric response of a selected liquid crystal epoxy monomer (plain and in curing systems) in a wide range of frequency and temperature. The dielectric spectroscopy, thanks to its sensitivity, is a very good tool for studying phase transitions, reaction progress, or material properties. This sensitivity is important in the case of liquid crystal epoxy resins, where properties of the final network depend on the choice of monomers, curing agents, curing conditions and post-curing treatment, or applying an external electric or magnetic field during the reaction. In most of the obtained cured products, the collected dielectric data show two relaxation processes. The α-process is related to a structural reorientation; it can usually be linked with the glass transition and the mechanical properties of the material. The β-process can be identified as a molecular motion process, probably associated with the carboxyl groups in the mesogen. A transient Maxwell-Wagner relaxation observed in one of the compositions after the initial curing is removed by post-curing treatment at elevated temperatures. Post-curing is therefore necessary for obtaining uniformly cured products in those cases. In the investigated systems, the choice of a curing agent can change the glass transition temperature by at least 70 °C. The obtained results are in a good agreement with an earlier study employing other techniques. Finally, we assess the influence of the direction of mesogen alignment on the dielectric properties of one selected system, where a global order was induced by applying an external magnetic field in the course of curing.

Electric breakdown of high polymer insulating materials at cryogenic temperature

International Nuclear Information System (INIS)

Kim, Sanhyon; Yoshino, Katsumi

1985-01-01

Cryogenic properties : temperature dependence of E sub(b) and effects of media upon E sub(b) were investigated on several high polymers. Temperature conditions were provided by liquid He (4.2 K), liquid N 2 (77 K) and cryogen (dry ice-methyl alcohol, 194 K). Silicone oil was used also at ambient temperature and elevated temperature. Polymer film coated with gold by vacuum evaporation was placed in cryostat, and high tension from pulse generator was applied to the film. Dielectric breakdowns were detected by oscilloscope and observed visually. The results of experiment are summerized as follow. (1) E sub(b) of film in He is affected by medium remarkably, and covering with 3-methyl pentane is effective for increasing E sub(b). (2) Temperature dependence of E sub(b) was not recognized in cryogenic temperature below liquid N 2 . (3) Temperature characteristic of E sub(b) changes considerably at the critical temperature T sub(c), and T sub(c) is dependent on material. (4) Strength against dielectric breakdown under cryogenic temperature is not affected by bridging caused by irradiation of electron beam. (5) Dielectric breakdown is thought to be caused by electronic process such as electron avalanche. Consequently, for designing insulation for the temperature below liquid He, insulation design for liquid N 2 is thought to be sufficient. However, the degradation and breakdown by mechanical stress under cryogenic temperature must be taken into consideration. (Ishimitsu, A.)

Thermally stimulated depolarization currents and dielectric properties of Mg0.95Ca0.05TiO3 filled HDPE composites

Science.gov (United States)

Shi, Yunzhou; Zhang, Li; Zhang, Jie; Yue, Zhenxing

2017-12-01

Mg0.95Ca0.05TiO3 (MCT) filled high density polyethylene (HDPE) composites were prepared by twin-screw extrusion followed by hot pressing technique. The thermally stimulated depolarization current (TSDC) measurement was performed to analyze the contribution of charge distribution and interfacial characteristics to the dielectric loss. TSDC spectra under different polarization conditions show that the introduction of ceramic fillers engenders shallow traps in the vicinity of ceramic-polymer interface, which hinders the injection of space charge from the electrode into the polymer matrix. In the composite materials applied to an external field, charges tend to be captured by these traps. The temperature dependence of relative permittivity and dielectric loss of the composites was measured, and a strong reliance of dielectric loss on temperature was observed. In the heating process, the release of charges accumulating at interfacial region is considered to contribute to the rise in dielectric loss with the increase of temperature.

Outcome of temperature variation on sol-gel prepared CuO nanostructure properties (optical and dielectric)

Energy Technology Data Exchange (ETDEWEB)

Bibi, Maryam [Nano Synthesis Laboratory, Department of Physics, National University of Sciences and Technology, Islamabad (Pakistan); Javed, Qurat-ul-Ain, E-mail: quratulain@sns.nust.edu.pk [Nano Synthesis Laboratory, Department of Physics, National University of Sciences and Technology, Islamabad (Pakistan); Abbas, Hussain [Institute of Avionics & Aeronautics (IAA), Air University, Islamabad (Pakistan); Baqi, Sabah [Nano Synthesis Laboratory, Department of Physics, National University of Sciences and Technology, Islamabad (Pakistan)

2017-05-01

The optical and dielectric properties of Copper Oxide (CuO) have made it a fascinating material to be used in solar energy harvesting, gas sensing, optoelectronics and catalytical applications. Focusing on the cost-effectiveness of Sol-gel method, it is employed for nanostructured CuO production. Effect of changing temperature is observed on the formation mechanism of CuO and its properties. The temperature range of 300 °C–500 °C was used in annealing of samples to produce defect free CuO nanomaterial. Prepared material was investigated using phase characterization (X-ray diffraction ‘XRD’) technique, scanning electron microscopy (SEM), UV–Visible absorption spectroscopy and LCR meter. A structural change in prepared CuO was observed from cluster formation to Nano-fibrils by increase in annealing temperature. 11.99 nm–29.17 nm crystallites of CuO were attained by using Debye Scherer formula. A large band gap of 3.15 eV was achieved by increasing the annealing temperature upto 400 °C. For better solar energy harvest, wide band gapped CuO structures are proved to be functional and practical materials. The fabricated CuO nanostructures were found suitable to be used in devices for stabilizing circuit designs for sensitive appliances as well as micro electromechanical systems (mems). - Highlights: • CuO was synthesized by using sol gel method post growth annealing process. • XRD and SEM characterizations confirm the successful synthesis of CuO. • Change in morphology was observed with varying annealing temperature. • Improved optical and dielectric properties were observed.

Temperature dependence of three-point correlation functions of viscous liquids: the case of glycerol

Energy Technology Data Exchange (ETDEWEB)

Dalle-Ferrier, Cecile; Eibl, Stefan; Alba-Simionesco, Christiane [Laboratoire de Chimie Physique, UMR 8000, Batiment 349, Universite Paris-Sud, 91405 Orsay (France); Pappas, Catherine [BENSC, Hahn-Meitner-Institute, HMI Berlin, Glienicker Strasse 100, D-14109 Berlin (Germany)], E-mail: cecile.dalle-ferrier@lcp.u-psud.fr

2008-12-10

What causes the dramatic slowing down of flow and relaxation that leads to glass formation in liquids as temperature decreases is hardly understood so far and is the subject of intensive research work. It is tempting to ascribe the strong temperature dependence of the dynamics, irrespective of molecular details, to a collective or cooperative behavior characterized by a length scale that grows as one approaches the glass transition. To access this length experimentally, we use the recently introduced three-point dynamic susceptibility, from which the number of molecules dynamically correlated during the structural relaxation, N{sub corr}, can be extracted. The three-point functions are related to the sensitivity of the averaged two-time dynamics to external control parameters, such as temperature and density. We studied N{sub corr} values in an important temperature range for a large number of liquids, and found that it systematically grows when approaching the glass transition. Here we specially emphasize the case of glycerol for which we combined dielectric and neutron spin echo spectroscopy to cover more than 16 decades in relaxation time.

Anomalous behavior of secondary dielectric relaxation in polypropylene glycols

Energy Technology Data Exchange (ETDEWEB)

Grzybowska, K; Grzybowski, A; Ziolo, J; Rzoska, S J; Paluch, M [Institute of Physics, Silesian University, Uniwersytecka 4, 40-007 Katowice (Poland)

2007-09-19

A surprising slow down in the dielectric secondary {gamma}-relaxation with temperature increasing near the glass transition is confirmed for several polypropylene glycols. The peculiar behavior diminishes as the molecular weight grows. The minimal model (Dyre and Olsen 2003 Phys. Rev. Lett. 91 155703) is applied successfully to describe the temperature dependences of the {gamma}-relaxation times. The minimal model parameters are analyzed for different molecular weights. A molecular explanation of the {gamma}-process anomaly for polypropylene glycols is proposed on the basis of the minimal model prediction.

Coupling between magnetic, dielectric properties and crystal structure in MnT2O4 (T = V, Cr, Mn)

International Nuclear Information System (INIS)

Suzuki, T; Adachi, K; Katsufuji, T

2006-01-01

We measured the temperature dependence of dielectric constant and striction for spinel MnT 2 O 4 (T = V, Cr, Mn) under magnetic field. We found critical changes of the dielectric constant and striction with ferrimagnetic ordering as well as applied magnetic field in MnV 2 O 4 and Mn 3 O 4 , which have orbital degree of freedom in the T 3+ ion. This result indicates the importance of the orbital degree of freedom for the coupling between dielectric, magnetic properties and crystal structure in these spinel compounds

Dielectric properties of Ga2O3-doped barium iron niobate ceramics

International Nuclear Information System (INIS)

Sanjoom, Kachaporn; Pengpat, Kamonpan; Eitssayeam, Sukum; Tunkasiri, Tawee; Rujijanagul, Gobwute

2014-01-01

Ga-doped BaFe 0.5 Nb 0.5 O 3 (Ba(Fe 1-x Ga x ) 0.5 Nb 0.5 O 3 ) ceramics were fabricated and their properties were investigated. All ceramics showed perovskite structure with cubic symmetry and the solubility of Ga in BFN ceramics had a limit at x = 0.2. Examination of the dielectric spectra indicated that all ceramic samples presented high dielectric constants that were frequency dependent. The x = 0.2 ceramic showed a very high dielectric constant (ε r > 240 000 at 1 kHz) while the x = 0.4 sample exhibited high thermal stability of dielectric constant with low loss tangent from room temperature (RT) to 100 C with ε r > 28 000 (at 1 kHz) when compared to other samples. By using a complex impedance analysis technique, bulk grain, grain boundary, and electrode response were found to affect the dielectric behavior that could be related to the Maxwell-Wagner polarization mechanism. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Structural, morphological and dielectric studies of zirconium substituted CoFe2O4 nanoparticles

Directory of Open Access Journals (Sweden)

S. Anand

2017-12-01

Full Text Available In this work, the influence of zirconium substitution in cubic spinel nanocrystalline CoFe2O4 on the structural, morphological and dielectric properties are reported. Zirconium substituted cobalt ferrite Co1-xZrxFe2O4 (x = 0.7 nanoparticles were synthesized by sol-gel route. The structural and morphological investigations using powder X-ray diffraction and high resolution scanning electron microscope (HRSEM analysis are reported. Scherrer plot, Williamson–Hall analysis and Size-strain plot method were used to calculate the crystallite size and lattice strain of the samples. High purity chemical composition of the sample was confirmed by energy dispersive X-ray analysis. The atoms vibration modes of as synthesized nanoparticles were recorded using Fourier transform infrared (FTIR spectrometer in the range of 4000–400 cm-1. The temperature-dependent dielectric properties of zirconium substituted cobalt ferrite nanoparticles were also carried out. Relative dielectric permittivity, loss tangent and AC conductivity were measured in the frequency range 50 Hz to 5 MHz at temperatures between 323 K and 473 K. The dielectric constant and dielectric loss values of the sample decreased with increasing in the frequency of the applied signal.

Glassy dielectric response in Tb2NiMnO6 double perovskite with similarities to a Griffiths phase

Science.gov (United States)

Nhalil, Hariharan; Nair, Harikrishnan S.; Bhat, H. L.; Elizabeth, Suja

2013-12-01

Results of frequency-dependent and temperature-dependent dielectric measurements performed on the double-perovskite Tb2NiMnO6 are presented. The real (\\epsilon_1 (f,T)) and imaginary (\\epsilon_2 (f,T)) parts of dielectric permittivity show three plateaus suggesting dielectric relaxation originating from the bulk, grain boundaries and the sample-electrode interfaces, respectively. The \\epsilon_1 (f,T) and \\epsilon_2 (f,T) are successfully simulated by a RC circuit model. The complex plane of impedance, Z'\\text{-}Z'' , is simulated using a series network with a resistor R and a constant phase element. Through the analysis of \\epsilon (f,T) using the modified Debye model, two different relaxation time regimes separated by a characteristic temperature, T^* , are identified. The temperature variation of R and C corresponding to the bulk and the parameter α from modified Debye fit lend support to this hypothesis. Interestingly, the T^* compares with the Griffiths temperature for this compound observed in magnetic measurements. Though these results cannot be interpreted as magnetoelectric coupling, the relationship between lattice and magnetism is markedly clear. We assume that the observed features have their origin in the polar nanoregions which originate from the inherent cationic defect structure of double perovskites.

Sintering behavior, ac conductivity and dielectric relaxation of Li1.3Ti1.7Al0.3(PO43 NASICON compound

Directory of Open Access Journals (Sweden)

Tasiu Zangina

Full Text Available The phenomenon of relaxation in dielectric materials is described as one of the powerful tools to determine the behavior and properties of ion transport. The kinetics of ionic species and dipole in solid-state electrolyte are dependent on frequency, temperature, and dielectric relaxation. Li1+xTi2−xAlx(PO43 conducting solid state electrolyte with x = 0.3 was synthesized via conventional solid state technique using the raw materials Li2CO3, TiO2, Al2O3, and NH4H2PO4 as starting materials. TGA/DTG and X-ray diffraction measurements were carried out to study the thermal behavior and phases of the composition. It was observed from the TGA/DTA curves that there is no mass loss above 500 °C. The XRD peaks were observed to start appearing at 500 °C which corresponds to small peaks in TGA. It was also pointed out that at increasing sintering temperatures from 700 °C to 1000 °C the number of phases drastically decreased which is attributed to the complete chemical reaction. Temperature and frequency dependence of dielectric relaxation and electric modulus of the compounds were investigated at temperatures 30–230 °C and at frequencies of 40 kHz–1 MHz. The findings showed that the dielectric relaxation peaks shift to higher temperature as frequency increases and the change in ac conductivity with frequency is in agreement with Jonscher’s power law. Keywords: Sintering behavior, Dielectric permittivity, Universal power law, Electric modulus

Structural, Dielectric, and Electrical Properties of Bi1- x Pb x Fe1- x (Zr0.5Ti0.5) x O3

Science.gov (United States)

Panda, Niranjan; Pattanayak, Samita; Choudhary, R. N. P.

2015-12-01

Polycrystalline samples of Bi1- x Pb x Fe1- x (Zr0.5Ti0.5) x O3 (BPFZTO) with x = 0.0, 0.2, 0.3, and 0.4 were prepared by high-temperature solid-state reaction. Preliminary structural analysis of calcined powders of the materials by use of x-ray powder diffraction confirmed formation of single-phase systems with the tetragonal structure. Room-temperature scanning electron micrographs of the samples revealed uniform distribution of grains of low porosity and different dimensions on the surface of the samples. The frequency-temperature dependence of dielectric and electric properties was studied by use of dielectric and complex impedance spectroscopy over a wide range of frequency (1 kHz to 1 MHz) at different temperatures (25-500°C). The dielectric constant of BiFeO3 (BFO) was enhanced by substitution with Pb(Zr0.5Ti0.5)O3 (PZT) whereas the dielectric loss of the BPFZTO compounds decreased with increasing PZT content. A significant contribution of both grains and grain boundaries to the electrical response of the materials was observed. The frequency-dependence of the ac conductivity of BPFZTO followed Jonscher's power law. Negative temperature coefficient of resistance behavior was observed for all the BPFZTO samples. Conductivity by thermally excited charge carriers and oxygen vacancies in the materials was believed to be of the Arrhenius-type.

Magnetically induced electrical transport and dielectric properties of 3d transition elemental substitution at the Mn-site in Nd0.67Ba0.33MnO3 manganites

Science.gov (United States)

Sudakshina, B.; Arun, B.; Chandrasekhar, K. Devi; Yang, H. D.; Vasundhara, M.

2018-05-01

We have investigated the temperature dependence of electrical transport and dielectric properties along with magnetoresistance and magneto dielectric behavior in Nd0.67Ba0.33Mn0.9TR0.1O3 (TR= Cr, Fe, Co, Ni, Cu) manganites. All the compounds crystallized into an orthorhombic structure with Imma space group. Nd0.67Ba0.33MnO3 shows insulating to metallic behavior at intermediate temperatures, but, with the substitution of transitional elements it shows insulating in nature, down to lowest temperature measured for all the compounds. Dielectric measurement shows the intrinsic behavior of these lossy materials. A large value of magneto resistance is obtained for all the compounds and considerable amount of magneto-dielectric effect is shown for all the substituted compounds at lower temperatures.

Temperature effect on the performance of a dissipative dielectric elastomer generator with failure modes

International Nuclear Information System (INIS)

Chen, S E; Deng, L; He, Z C; Li, Eric; Li, G Y

2016-01-01

Research on dielectric elastomer generators (DEGs) which can be utilized to convert mechanical energy to electrical energy has gained wide attention lately. However, very few works account for the operating temperature, viscoelasticity and current leakage in the analysis of DEGs simultaneously. In this study, under several compound four-stroke conversion cycles, the electromechanical performance and energy conversion of a dissipative DEG made of a very-high-bond (VHB) elastomer are investigated at different operating temperatures. The performance parameters such as energy density and conversion efficiency are calculated under different temperatures. Moreover, the common failure modes of the generator are considered: material rupture, loss of tension, electrical breakdown and electromechanical instability. The numerical results have distinctly shown that the operating temperature plays an important role in the performance of DEGs, which could possibly make a larger conversion efficiency for the DEG. (paper)

Norbornylene-based polymer systems for dielectric applications

Science.gov (United States)

Dirk, Shawn M [Albuquerque, NM; Wheeler, David R [Albuquerque, NM

2012-07-17

A capacitor having at least one electrode pair being separated by a dielectric component, with the dielectric component being made of a polymer such as a norbornylene-containing polymer with a dielectric constant greater than 3 and a dissipation factor less than 0.1 where the capacitor has an operating temperature greater than 100.degree. C. and less than 170.degree. C.

Dielectric relaxation and ac conductivity behaviour of polyvinyl alcohol–HgSe quantum dot hybrid films

International Nuclear Information System (INIS)

Sinha, Subhojyoti; Chatterjee, Sanat Kumar; Meikap, Ajit Kumar; Ghosh, Jiten

2014-01-01

Here we report a comparative study on the dielectric relaxation and ac conductivity behaviour of pure polyvinyl alcohol (PVA) and PVA–mercury selenide (HgSe) quantum dot hybrid films in the temperature range 298 K ⩽ T ⩽ 420 K and in the frequency range 100 Hz ⩽ f ⩽ 1 MHz. The prepared nanocomposite exhibits a larger dielectric constant as compared to the pure PVA. The real and imaginary parts of the dielectric constants were found to fit appreciably with the modified Cole–Cole equation, from which temperature-dependent values of the relaxation times, free charge carrier conductivity and space charge carrier conductivity were calculated. The relaxation time decreases with the quantum dot's inclusion in the PVA matrix and with an increase in temperature, whereas free charge carrier conductivity and space charge carrier conductivity increases with an increase in temperature. An increase in ac conductivity for the nanocomposites has also been observed, while the charge transport mechanism was found to follow the correlated barrier hopping model in both cases. An easy-path model with a suitable electrical equivalent circuit has been employed to analyse the temperature-dependent impedance spectra. The imaginary part of the complex electric modulus spectra exhibit an asymmetric nature and a non-Debye type of behaviour, which has been elucidated considering a generalized susceptibility function. The electric modulus spectra of the nanocomposite demonstrate a smaller amplitude and broader width, as compared to the pure PVA sample. (paper)

Evolution of phase transformation behavior and dielectric temperature stability of BaTiO3–Bi(Zn0.5Zr0.5)O3 ceramics system

International Nuclear Information System (INIS)

Wang, Yiliang; Chen, Xiuli; Zhou, Huanfu; Fang, Liang; Liu, Laijun; Zhang, Hui

2013-01-01

Highlights: ► (1 − x)BaTiO 3 –xBi(Zn 0.5 Zr 0.5 )O 3 ceramics were synthesized. ► A systematic structural change was observed near x = 0.07 and x = 0.4. ► A change from a normal ferroelectric behavior to diffusive and dispersive relaxor-like characteristic was also observed. ► (1 − x)BT–xBZZ ceramics show good dielectric temperature stability over a wide temperature range. - Abstract: (1 − x)BaTiO 3 –xBi(Zn 0.5 Zr 0.5 )O 3 [(1 − x)BT–xBZZ, 0.01 ⩽ x ⩽ 0.6] ceramics were synthesized by solid-state reaction technique. Based on the X-ray diffraction data analysis, a systematic structure change from the ferroelectric tetragonal phase to pseudocubic phase and the pseudocubic phase to orthorhombic phase was observed near x = 0.07 and x = 0.4 at room temperature, respectively. Dielectric measurements show a dielectric anomaly, over the temperature range from 50 to 200 °C for the compositions with 0.03 ⩽ x ⩽ 0.09. A change from a normal ferroelectric behavior to diffusive and dispersive relaxor-like characteristic was also observed. Moreover, (1 − x)BT–xBZZ ceramics show good dielectric temperature stability over a wide temperature range, which indicates that these ceramics can be applied in the temperature stability devices.

Phase transformation in multiferroic Bi{sub 5}Ti{sub 3}FeO{sub 15} ceramics by temperature-dependent ellipsometric and Raman spectra: An interband electronic transition evidence

Energy Technology Data Exchange (ETDEWEB)

Jiang, P. P.; Duan, Z. H.; Xu, L. P.; Zhang, X. L.; Li, Y. W.; Hu, Z. G., E-mail: zghu@ee.ecnu.edu.cn; Chu, J. H. [Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

2014-02-28

Thermal evolution and an intermediate phase between ferroelectric orthorhombic and paraelectric tetragonal phase of multiferroic Bi{sub 5}Ti{sub 3}FeO{sub 15} ceramic have been investigated by temperature-dependent spectroscopic ellipsometry and Raman scattering. Dielectric functions and interband transitions extracted from the standard critical-point model show two dramatic anomalies in the temperature range of 200–873 K. It was found that the anomalous temperature dependence of electronic transition energies and Raman mode frequencies around 800 K can be ascribed to intermediate phase transformation. Moreover, the disappearance of electronic transition around 3 eV at 590 K is associated with the conductive property.

Effects of vacuum-ultraviolet irradiation on copper penetration into low-k dielectrics under bias-temperature stress

Energy Technology Data Exchange (ETDEWEB)

Guo, X.; Zheng, H.; Xue, P.; Shohet, J. L. [Plasma Processing and Technology Laboratory and Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); King, S. W. [Logic Technology Development, Intel Corporation, Hillsboro, Oregon 97124 (United States); Nishi, Y. [Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)

2015-01-05

The effects of vacuum-ultraviolet (VUV) irradiation on copper penetration into non-porous low-k dielectrics under bias-temperature stress (BTS) were investigated. By employing x-ray photoelectron spectroscopy depth-profile measurements on both as-deposited and VUV-irradiated SiCOH/Cu stacks, it was found that under the same BTS conditions, the diffusion depth of Cu into the VUV-irradiated SiCOH is higher than that of as-deposited SiCOH. On the other hand, under the same temperature-annealing stress (TS) without electric bias, the Cu distribution profiles in the VUV-irradiated SiCOH were same with that for the as-deposited SiCOH. The experiments suggest that in as-deposited SiCOH, the diffused Cu exists primarily in the atomic state, while in VUV-irradiated SiCOH, the diffused Cu is oxidized by the hydroxyl ions (OH{sup −}) generated from VUV irradiation and exists in the ionic state. The mechanisms for metal diffusion and ion injection in VUV irradiated low-k dielectrics are discussed.

Elaboration and dielectric characterization of a doped ferroelectric ...

African Journals Online (AJOL)

... 1150,1180 and 1200 °C successively to optimize the sintering temperature optimal where the density of the sample is maximum (near theoretical density) and therefore the product has better physical quality. The study of dielectric properties of all samples showed a high permittivity dielectric εr = 18018, low dielectric loss: ...

Dielectric measurements on PWB materials at microwave frequencies

Indian Academy of Sciences (India)

Unknown

the angular frequency and c0 the velocity of light, c the thickness of the ... Dielectric parameters, absorption index and refractive index for pure PSF and pure PMMA at 8⋅92 GHz frequency and at 35°C temperature. Dielectric. Dielectric. Loss. Relaxation. Conductivity Absorption. Refractive. Thickness, constant loss tangent.

Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

Science.gov (United States)

Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

2018-03-01

In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

Transport and dielectric studies on silver based molybdo-tungstate quaternary superionic conducting glasses

International Nuclear Information System (INIS)

Prasad, P.S.S.; Radhakrishna, S.

1988-01-01

The molybdo-tungstate (MoO 3 -WO 3 ) combination of glass formers with silver oxide (Ag 2 O) as glass modifier and silver iodide (AgI) as ionic conductor were prepared to study the transport and dielectric properties of 60% AgI-40% (x Ag 2 O-y(WO 3 -MoO 3 )) for x/y=0.33 to 3.0 and establish the feasibility of using these glasses as electrolytes in the fabrication and characterisation of solid state batteries and potential memory devices. The details of the preparation of glasses and methods of measurement of their capacitance, dielectric loss factor and ac conductivity in the frequency range 100 Hz - 100 kHz from 30-120 C have been reported. The electronic contribution to the total conductivity, the ionic and electronic transport numbers were determined using Wagners dc polarisation technique. The observed high ionic and low electronic conductivities were attributed to the formation of ionic clusters in the glass and the effect of mixing two glass formers. The observed total ionic conductivity and its temperature dependence was explained using Arrhenius relation σ=σ 0 /T exp(-E/RT) and the measured dielectric constant and dielectric loss were explained on the basis of Jonschers theory. The frequency dependence of dielectric constant obeys the theory based on the polarisation of ions. 25 refs.; 8 figs

Dielectric Properties and Oxidation Roasting of Molybdenite Concentrate by Using Microwave Energy at 2.45 GHz Frequency

Science.gov (United States)

Yonglin, Jiang; Bingguo, Liu; Peng, Liu; Jinhui, Peng; Libo, Zhang

2017-12-01

Conversion of electromagnetic energy into heat depends largely on the dielectric properties of the material being treated. Therefore, determining the dielectric properties of molybdenite concentrate and its microwave power penetration depth in relation to a temperature increment at the commercial frequency of 2.45 GHz is necessary to design industrial microwave processing units. In this study, the dielectric constants increased as the temperature increased in the entire experimental range. The loss factor presented an opposite trend, except for 298 K to 373 K (25 °C to 100 °C) in which a cavity perturbation resonator was used. The plots of nonlinear surface fitting indicate that the increase in dielectric loss causes a considerable decrease in penetration depth, but the dielectric constants exert a small positive effect. The thermogravimetric analysis (TGA-DSC) of the molybdenite concentrate was carried out to track its thermal decomposition process, aim to a dielectric analysis during the microwave heating. MoO3 was prepared from molybdenite concentrate through oxidation roasting in a microwave heating system and a resistance furnace, respectively. The phase transitions and morphology evolutions during oxidation roasting were characterized through X-ray diffraction and scanning electron microscopy. Results show that microwave thermal technique can produce high-purity molybdenum trioxide.

Dielectric behaviour of strontium tartrate single crystals

Indian Academy of Sciences (India)

Unknown

dielectric loss (tan δ) as functions of frequency and temperature. Ion core type ... Since the data on dielectric properties of strontium tartrate trihydrate (STT) do not ... through 'AE' make 15-amp dimmerstat, the rate of heating was maintained ...

Temperature dependence of electrical properties of mixture of exogenous neurotransmitters dopamine and epinephrine

Science.gov (United States)

Patki, Mugdha; Patil, Vidya

2016-05-01

Neurotransmitters are chemical messengers that support the communication between the neurons. In vitro study of exogenous neurotransmitters Dopamine and Epinephrine and their mixture, carried out to learn about their electrical properties being dielectric constant and conductivity amongst others. Dielectric constant and conductivity of the selected neurotransmitters are found to increase with temperature. As a result, the time constant of the system increases with temperature. This change leads to increase in the time taken by the synapse to transport the action potential. The correlation between physical properties of exogenous neurotransmitters and psychological and physiological behaviour of human being may be understood with the help of current study. The response time of Epinephrine is in microseconds whereas response time of Dopamine is in milliseconds. The response time for both the neurotransmitters and their mixture is found to be increasing with temperature indicating the symptoms such as depression, apathy, chronic fatigue and low physical energy with no desire to exercise the body, which are observed during the fever.

Hydrostatic pressure effects on the dielectric response of potassium cyanide

International Nuclear Information System (INIS)

Ortiz Lopez, J.

1992-01-01

The complex dielectric constant of crystalline KCN was measured under hydrostatic pressures up to 6.1 kbar in the temperature and frequency ranges of 50-300 K and 10-10 5 Hz, respectively. It is found that the pressure derivative of the real part of the dielectric constant at all measured temperatures is negative. From these results we obtain estimates for the pressure and volume derivatives of polarizabilities. The anomaly in the real part of the dielectric constant at the elastic order-disorder transition shifts to higher temperatures with increasing pressure at a rate of 2.05 K/kbar. By carefully avoiding thermal cycling through this transition we find no evidence of the monoclinic phase reported to exist in the P-T phase diagram of KCN at relatively low pressures. Dielectric loss measurements show thermally-activated CN - reorientation rates in the elastically ordered phase with pressure-independent reorientational barriers and decreasing attempt frequencies for increasing pressures. Additional pressure effects on dielectric loss allow to obtain the pressure derivative of the antiferroelectric transition temperature as 1.97 K/kbar. (Author)

Dielectric Properties of Boron Nitride-Ethylene Glycol (BN-EG) Nanofluids

Science.gov (United States)

Fal, Jacek; Cholewa, Marian; Gizowska, Magdalena; Witek, Adam; ŻyŁa, GaweŁ

2017-02-01

This paper presents the results of experimental investigation of the dielectric properties of ethylene glycol (EG) with various load of boron nitride (BN) nanoparticles. The nanofuids were prepared by using a two-step method on the basis of commercially available BN nanoparticles. The measurements were carried out using the Concept 80 System (NOVOCONTROL Technologies GmbH & Co. KG, Montabaur, Germany) in a frequency range from 10 Hz to 10 MHz and temperatures from 278.15 K to 328.15 K. The frequency-dependent real (ɛ ^' }) and imaginary (ɛ ^' ' }) parts of the complex permittivity (ɛ ^*) and the alternating current (AC) conductivity are presented. Also, the effect of temperature and mass concentrations on the dielectric properties of BN-EG nanofluids are demonstrated. The results show that the most significant increase can be achieved for 20 wt.% of BN nanoparticles at 283.15 K and 288.15 K, that is eleven times larger than in the case of pure EG.

Trends of microwave dielectric materials for antenna application

International Nuclear Information System (INIS)

Sulong, T. A. T.; Osman, R. A. M.; Idris, M. S.

2016-01-01

Rapid development of a modern microwave communication system requires a high quality microwave dielectric ceramic material to be used as mobile and satellite communication. High permittivity of dielectric ceramics leads to fabrication of compact device for electronic components. Dielectric ceramics which used for microwave applications required three important parameters such as high or appropriate permittivity (ε_r), high quality factor (Q _f ≥ 5000 GH z) and good temperature coefficient of resonant frequency (τ_f). This paper review of various dielectric ceramic materials used as microwave dielectric materials and related parameters for antenna applications.

Dielectric and AC Conductivity Studies in PPy-Ag Nanocomposites

OpenAIRE

Praveenkumar, K.; Sankarappa, T.; Ashwajeet, J. S.; Ramanna, R.

2015-01-01

Polypyrrole and silver nanoparticles have been synthesized at 277 K by chemical route. Nanoparticles of polypyrrole-silver (PPy-Ag) composites were prepared by mixing polypyrrole and silver nanoparticles in different weight percentages. Dielectric properties as a function of temperature in the range from 300 K to 550 K and frequency in the range from 50 Hz to 1 MHz have been measured. Dielectric constant decreased with increase in frequency and temperature. Dielectric loss decreased with incr...

Poly(methyl methacrylate) as a self-assembled gate dielectric for graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Sanne, A.; Movva, H. C. P.; Kang, S.; McClellan, C.; Corbet, C. M.; Banerjee, S. K. [Microelectronics Research Center, University of Texas, Austin, Texas 78758 (United States)

2014-02-24

We investigate poly(methyl methacrylate) (PMMA) as a low thermal budget organic gate dielectric for graphene field effect-transistors (GFETs) based on a simple process flow. We show that high temperature baking steps above the glass transition temperature (∼130 °C) can leave a self-assembled, thin PMMA film on graphene, where we get a gate dielectric almost for “free” without additional atomic layer deposition type steps. Electrical characterization of GFETs with PMMA as a gate dielectric yields a dielectric constant of k = 3.0. GFETs with thinner PMMA dielectrics have a lower dielectric constant due to decreased polarization arising from neutralization of dipoles and charged carriers as baking temperatures increase. The leakage through PMMA gate dielectric increases with decreasing dielectric thickness and increasing electric field. Unlike conventional high-k gate dielectrics, such low-k organic gate dielectrics are potentially attractive for devices such as the proposed Bilayer pseudoSpin Field-Effect Transistor or flexible high speed graphene electronics.

Characteristics of dielectric properties and conduction mechanism of TlInS2:Cu single crystals

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.; El-Zaidia, E. F. M.

2013-12-01

Single crystals of TlInS2:Cu were grown by the modified Bridgman method. The dielectric behavior of TlInS2:Cu was investigated using the impedance spectroscopy technique. The real (ε1), imaginary (ε2) parts of complex dielectric permittivity and ac conductivity were measured in the frequency range (42-2×105) Hz with a variation of temperature in the range from 291 K to 483 K. The impedance data were presented in Nyquist diagrams for different temperatures. The frequency dependence of σtot (ω) follows the Jonscher's universal dynamic law with the relation σtot (ω)=σdc+Aωs, (where s is the frequency exponent). The mechanism of the ac charge transport across the layers of TlInS2:Cu single crystals was referred to the hopping over localized states near the Fermi level. The examined system exhibits temperature dependence of σac (ω), which showed a linear increase with the increase in temperature at different frequencies. Some parameters were calculated as: the density of localized states near the Fermi level, NF, the average time of charge carrier hopping between localized states, τ, and the average hopping distance, R.

Dielectric response and electric modulus of Y{sub 2}CrCoO{sub 6} perovskite

Energy Technology Data Exchange (ETDEWEB)

Pecovska-Gjorgjevich, M., E-mail: mpecovska@gmail.com; Popeski-Dimovski, R. [Department of Physics, Faculty of Natural Sciences and Mathematics, “Ss. Cyril and Methodius” University, Arhimedova 3, 1000 Skopje, R. Macedonia (Macedonia, The Former Yugoslav Republic of); Dimitrovska-Lazova, S. [Department of Chemistry, Faculty of Natural Sciences and Mathematics, “Ss. Cyril and Methodius” University, Arhimedova 5, 1000 Skopje, R. Macedonia (Macedonia, The Former Yugoslav Republic of); Aleksovska, S. [Department of Chemistry, Faculty of Natural Sciences and Mathematics, “Ss. Cyril and Methodius” University, Arhimedova 5, 1000 Skopje, R. Macedonia (Macedonia, The Former Yugoslav Republic of); Research Center for Environment and Materials, Macedonian Academy of Sciences and Arts, Bul. “Krste Misirkov” 2, P.O. Box 428, 1000 Skopje, Republic of Macedonia (Macedonia, The Former Yugoslav Republic of)

2016-03-25

Y{sub 2}CrCoO{sub 6} perovskite prepared by solution combustion method and sintered at 1073 K has been characterized by dielectric spectroscopy and electric modulus formalism. Temperature and frequency dependent measurements of permitivitty reveal that observed relaxation might be related to the hopping conductivity, i.e. universal dielectric response. The presence of electrode polarization is dominant at low frequencies. The electric modulus dependencies enable us to distinguish and separate the relaxation processes connected to the conduction processes in the material. The presences of both grain and grain boundary effects are established, each dominant in different frequency and temperature range. The conductivity through grain boundaries obeys metalic behavior, while conductivity through grains shows semiconductor behavior. The electrical behavior of this material depends on the differences in (Cr-O) and (Co-O) bond lenghts, Co{sup 3+} being in the low-spin state, resulting in shorter Co-O and thus stronger π bonding e.g. more efficient overlapping of the Co{sup 3+} d-orbitals with oxygen p{sub π} orbitals.

Gamma-irradiation effect on dielectric properties of vanadate doped polyvinyl alcohol

International Nuclear Information System (INIS)

Abo-Ellil, M.S.; Ahmed, M.A.; El-Ahdal, M.A.

1997-01-01

The real part of the dielectric constant (ε) for different concentrations (1%, 2% and 3% by wt.) of the ammonium meta vanadate doped polyvinyl alcohol was measured as a function of temperature and frequency. Different γ-ray doses (2.0, 5.0 and 10kGy) were used for samples irradiation. The dielectric constant of the samples reveals more than one peak depending on the vanadate concentration as well as the applied frequency. The main relaxation peak was discussed with reference degradation and crosslinking that vary drastically with the γ-dose. The hump that appeared at high temperature was found to be due to order-disorder transition. The variation of the internal dynamic viscosity of the sample by irradiation was found to play a role in the polarization process as well as (ε) values. Gradual increase in (ε) was obtained by increasing the γ-dose. (author)

The dielectric environment dependent exchange self-energy of the energy structure in graphene

International Nuclear Information System (INIS)

Yang, C.H.; Xu, W.

2010-01-01

We theoretically calculate the energy dispersion in the presence of the screened exchange self-energy in extrinsic monolayer graphene. It is found that the exchange self-energy enhances the renormalized Fermi velocity. With decreasing the dielectric constant, the screening effect and the electron correlation effect increase which induces the Fermi velocity increasing. The screened exchange energy has an energy shift at the Dirac points. The self-energy from the valance band carriers gives the main contribution to the effective energy. We also discuss the electron density dependence of the self-energy.

The dielectric environment dependent exchange self-energy of the energy structure in graphene

Energy Technology Data Exchange (ETDEWEB)

Yang, C.H., E-mail: chyang@nuist.edu.c [Faculty of Maths and Physics, Nanjing University of Information Science and Technology, Nanjing 210044 (China); Xu, W. [Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

2010-10-01

We theoretically calculate the energy dispersion in the presence of the screened exchange self-energy in extrinsic monolayer graphene. It is found that the exchange self-energy enhances the renormalized Fermi velocity. With decreasing the dielectric constant, the screening effect and the electron correlation effect increase which induces the Fermi velocity increasing. The screened exchange energy has an energy shift at the Dirac points. The self-energy from the valance band carriers gives the main contribution to the effective energy. We also discuss the electron density dependence of the self-energy.

Determination of temperature dependency of material parameters for lead-free alkali niobate piezoceramics by the inverse method

Directory of Open Access Journals (Sweden)

K. Ogo

2016-06-01

Full Text Available Sodium potassium niobate (NKN piezoceramics have been paid much attention as lead-free piezoelectric materials in high temperature devices because of their high Curie temperature. The temperature dependency of their material parameters, however, has not been determined in detail up to now. For this purpose, we exploit the so-called Inverse Method denoting a simulation-based characterization approach. Compared with other characterization methods, the Inverse Method requires only one sample shape of the piezoceramic material and has further decisive advantages. The identification of material parameters showed that NKN is mechanically softer in shear direction compared with lead zirconate titanate (PZT at room temperature. The temperature dependency of the material parameters of NKN was evaluated in the temperature range from 30 °C to 150 °C. As a result, we figured out that dielectric constants and piezoelectric constants show a monotonous and isotropic increment with increasing temperature. On the other hand, elastic stiffness constant c 44 E of NKN significantly decreased in contrast to other elastic stiffness constants. It could be revealed that the decrement of c 44 E is associated with an orthorhombic-tetragonal phase transition. Furthermore, ratio of elastic compliance constants s 44 E / s 33 E exhibited similar temperature dependent behavior to the ratio of piezoelectric constants d15/d33. It is suspected that mechanical softness in shear direction is one origin of the large piezoelectric shear mode of NKN. Our results show that NKN are suitable for high temperature devices, and that the Inverse Method should be a helpful approach to characterize material parameters under their practical operating conditions for NKN.

Effect of orthorhombic distortion on dielectric and piezoelectric properties of CaBi4Ti4O15 ceramics

Science.gov (United States)

Tanwar, Amit; Sreenivas, K.; Gupta, Vinay

2009-04-01

High temperature bismuth layered piezoelectric and ferroelectric ceramics of CaBi4Ti4O15 (CBT) have been prepared using the solid state route. The formation of single phase material with orthorhombic structure was verified from x-ray diffraction and Raman spectroscopy. The orthorhombic distortion present in the CBT ceramic sintered at 1200 °C was found to be maximum. A sharp phase transition from ferroelectric to paraelectric was observed in the temperature dependent dielectric studies of all CBT ceramics. The Curie's temperature (Tc=790 °C) was found to be independent of measured frequency. The behavior of ac conductivity as a function of frequency (100 Hz-1 MHz) at low temperatures (<500 °C) follows the power law and is attributed to hopping conduction. The presence of large orthorhombic distortion in the CBT ceramic sintered at 1200 °C results in high dielectric constant, low dielectric loss, and high piezoelectric coefficient (d33). The observed results indicate the important role of orthorhombic distortion in determining the improved property of multicomponent ferroelectric material.

Investigations on electrical conductivity and dielectric properties of Na doped ZnO synthesized from sol gel method

Energy Technology Data Exchange (ETDEWEB)

Tabib, Asma; Sdiri, Nasr [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Elhouichet, Habib, E-mail: habib.elhouichet@fst.rnu.tn [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia); Département de Physique, Faculté des Sciences de Tunis, University Tunis El Manar, Tunis 2092 (Tunisia); Férid, Mokhtar [Laboratoire de Physico-Chimie des Matériaux Minéraux et leurs Applications, Centre National de Recherches en Sciences des Matériaux, B.P. 95 Hammam-Lif, 2050 (Tunisia)

2015-02-15

Highlights: • ZnO nanoparticles doped with Na were prepared from sol-gel method. • Electric conductivity and dielectric properties were investigated. • The ZnO conductivity is estimated to be of p-type for critical Na doping of 1.5% at. - Abstract: Na doped ZnO nanoparticles (NPs) were elaborated by sol gel technique. The X-ray diffraction patterns show that the peaks are indexed to the hexagonal structure without any trace of an extra phase. Electric and dielectric properties were investigated using complex impedance spectroscopy. The impedance spectra were analyzed in terms of equivalent circuits involving resistors, capacitors and constant phase elements (CPE). The contribution of grain boundary resistance to the total resistance of the system is remarkable. The AC conductivity increases with temperature following the Arrhenius law, with single apparent activation energy for conduction process. The frequency dependence of the electric conductivity follows a simple power law behavior, in according to relation σ{sub AC}(ω) = σ(0) + A ω{sup s}, where s is smaller than 1. The analysis of dc conductivity indicates that the conduction is ionic in nature. The study of its variation, at fixed temperature, with Na content shows sharp decrease which is explained by the formation of Na{sub Zn} acceptor. It was found that the dc conductivity reaches its minimum value for critical Na concentration of 1.5% at which the conductivity is estimated to be of p-type. Impedance and modulus study reveals the temperature dependent non-Debye type relaxation phenomenon. Dielectric studies revealed a promising dielectric properties (relatively high ε′ at low frequencies and low loss at high frequencies). In the low-frequency region, the values of M′ tends to zero suggesting negligible or absent electrode polarization phenomenon. The frequency dependent maxima in the imaginary modulus are found to obey to Arrhenius law.

Time-dependent electrophoresis of a dielectric spherical particle embedded in Brinkman medium

Science.gov (United States)

Saad, E. I.; Faltas, M. S.

2018-04-01

An expression for electrophoretic apparent velocity slip in the time-dependent flow of an electrolyte solution saturated in a charged porous medium within an electric double layer adjacent to a dielectric plate under the influence of a tangential uniform electric field is derived. The velocity slip is used as a boundary condition to solve the electrophoretic motion of an impermeable dielectric spherical particle embedded in an electrolyte solution saturated in porous medium under the unsteady Darcy-Brinkman model. Throughout the system, a uniform electric field is applied and maintains with constant strength. Two cases are considered, when the electric double layer enclosing the particle is thin, but finite and when of a particle with a thick double layer. Expressions for the electrophoretic mobility of the particle as functions of the relevant parameters are found. Our results indicate that the time scale for the growth of mobility is significant and small for high permeability. Generally, the effect of the relaxation time for starting electrophoresis is negligible, irrespective of the thickness of the double layer and permeability of the medium. The effects of the elapsed time, permeability, mass density and Debye length parameters on the fluid velocity, the electrophoretic mobility and the acceleration are shown graphically.

Correlation between temperature dependence of elastic moduli and Debye temperature of paramagnetic metal

International Nuclear Information System (INIS)

Bodryakov, V.Yu.; Povzner, A.A.

2000-01-01

The correlation between the temperature dependence of elastic moduli and the Debye temperature of paramagnetic metal is analyzed in neglect of the temperature dependence of the Poison coefficient σ within the frames of the Debye-Grueneisen presentations. It is shown, that namely the temperature dependence of the elastic moduli determines primarily the temperature dependence of the Debye temperature Θ(T). On the other hand, the temperature dependence Θ(T) very weakly effects the temperature dependence of the elastic moduli. The later made it possible to formulate the self-consistent approach to calculation of the elastic moduli temperature dependence. The numerical estimates of this dependence parameters are conducted by the example of the all around compression modulus of the paramagnetic lutetium [ru

Structural, ac conductivity and dielectric properties of 3-formyl chromone

Science.gov (United States)

Ali, H. A. M.

2017-07-01

The structure for the powder of 3-formyl chromone was examined by X-ray diffraction technique in the 2θ° range ( 4° - 60° . The configuration of Al/3-formyl chromone/Al samples was designed. The electrical and dielectric properties were studied as a function of frequency (42- 5 × 106 Hz) and temperature (298-408K). The ac conductivity data of bulk of 3-formyl chromone varies as a power law with the frequency at different temperatures. The predominant mechanism for ac conduction was deduced. The ac conductivity shows a thermally activated process at different frequencies. The dielectric constant and dielectric loss were determined using the capacitance and dissipation factor measurements at different temperatures. The dielectric loss shows a peak of relaxation time that shifted to higher frequency with an increase in the temperature. The activation energy of the relaxation process was estimated.

Conduction mechanism and the dielectric relaxation process of a-Se75Te25-xGax (x=0, 5, 10 and 15 at wt%) chalcogenide glasses

International Nuclear Information System (INIS)

Yahia, I.S.; Hegab, N.A.; Shakra, A.M.; Al-Ribaty, A.M.

2012-01-01

Se 75 Te 25-x Ga x (x=0, 5, 10 and 15 at wt%) chalcogenide compositions were prepared by the well known melt quenching technique. Thin films with different thicknesses in the range (185-630 nm) of the obtained compositions were deposited by thermal evaporation technique. X-ray diffraction patterns indicate that the amorphous nature of the obtained films. The ac conductivity and the dielectric properties of the studied films have been investigated in the frequency range (10 2 -10 5 Hz) and in the temperature range (293-333 K). The ac conductivity was found to obey the power low ω s where s≤1 independent of film thickness. The temperature dependence of both ac conductivity and the exponent s can be well interpreted by the correlated barrier hopping (CBH) model. The experimental results of the dielectric constant ε 1 and dielectric loss ε 2 are frequency and temperature dependent. The maximum barrier height W m calculated from the results of the dielectric loss according to the Guintini equation, and agrees with that proposed by the theory of hopping of charge carriers over a potential barrier as suggested by Elliott for chalcogenide glasses. The density of localized state was estimated for the studied film compositions. The variation of the studied properties with Ga content was also investigated. The correlation between the ac conduction and the dielectric properties were verified.

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors

Science.gov (United States)

Bezryadin, A.; Belkin, A.; Ilin, E.; Pak, M.; Colla, Eugene V.; Hubler, A.

2017-12-01

Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al2O3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm-1 (i.e., 1 GV m-1), which is much larger than the table value of the Al2O3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

Large energy storage efficiency of the dielectric layer of graphene nanocapacitors.

Science.gov (United States)

Bezryadin, A; Belkin, A; Ilin, E; Pak, M; Colla, Eugene V; Hubler, A

2017-12-08

Electric capacitors are commonly used in electronic circuits for the short-term storage of small amounts of energy. It is desirable however to use capacitors to store much larger energy amounts to replace rechargeable batteries. Unfortunately existing capacitors cannot store sufficient energy to be able to replace common electrochemical energy storage systems. Here we examine the energy storage capabilities of graphene nanocapacitors, which are tri-layer devices involving an Al film, Al 2 O 3 dielectric layer, and a single layer of carbon atoms, i.e., graphene. This is a purely electronic capacitor and therefore it can function in a wide temperature interval. The capacitor shows a high dielectric breakdown electric field strength, of the order of 1000 kV mm -1 (i.e., 1 GV m -1 ), which is much larger than the table value of the Al 2 O 3 dielectric strength. The corresponding energy density is 10-100 times larger than the energy density of a common electrolytic capacitor. Moreover, we discover that the amount of charge stored in the dielectric layer can be equal or can even exceed the amount of charge stored on the capacitor plates. The dielectric discharge current follows a power-law time dependence. We suggest a model to explain this behavior.

Age dependence of dielectric properties of bovine brain and ocular tissues in the frequency range of 400 MHz to 18 GHz

International Nuclear Information System (INIS)

Schmid, Gernot; Ueberbacher, Richard

2005-01-01

In order to identify possible age-dependent dielectric properties of brain and eye tissues in the frequency range of 400 MHz to 18 GHz, measurements on bovine grey and white matter as well as on cornea, lens (cortical) and the vitreous body were performed using a commercially available open-ended coaxial probe and a computer-controlled vector network analyser. Freshly excised tissues of 52 animals of two age groups (42 adult animals, i.e. 16-24 month old and 10 young animals, i.e. 4-6 month old calves) were examined within 8 min (brain tissue) and 15 min (eye tissue), respectively, of the animals' death. Tissue temperatures for the measurements were 32 ± 1 0 C and 25 ± 1 0 C for brain and eye tissues, respectively. Statistical analysis of the measured data revealed significant differences in the dielectric properties of white matter and cortical lens tissue between the adult and the young group. In the case of white matter the mean values of conductivity and permittivity of young tissue were 15%-22% and 12%-15%, respectively, higher compared to the adult tissue in the considered frequency range. Similarly, young cortical lens tissue was 25%-76% higher in conductivity and 27%-39% higher in permittivity than adult cortical lens tissue

Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

2012-07-01

We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

Dielectric properties of Ga{sub 2}O{sub 3}-doped barium iron niobate ceramics

Energy Technology Data Exchange (ETDEWEB)

Sanjoom, Kachaporn [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Sri Ayutthaya Road, Bangkok, 10400 (Thailand); Pengpat, Kamonpan; Eitssayeam, Sukum; Tunkasiri, Tawee [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Rujijanagul, Gobwute [Department of Physics and Materials Science, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Materials Science Research Center, Faculty of Science, Chiang Mai University, Chiang Mai, 50200 (Thailand); Thailand Center of Excellence in Physics, Commission on Higher Education, 328 Sri Ayutthaya Road, Bangkok, 10400 (Thailand)

2014-08-15

Ga-doped BaFe{sub 0.5}Nb{sub 0.5}O{sub 3} (Ba(Fe{sub 1-x}Ga{sub x}){sub 0.5}Nb{sub 0.5}O{sub 3}) ceramics were fabricated and their properties were investigated. All ceramics showed perovskite structure with cubic symmetry and the solubility of Ga in BFN ceramics had a limit at x = 0.2. Examination of the dielectric spectra indicated that all ceramic samples presented high dielectric constants that were frequency dependent. The x = 0.2 ceramic showed a very high dielectric constant (ε{sub r} > 240 000 at 1 kHz) while the x = 0.4 sample exhibited high thermal stability of dielectric constant with low loss tangent from room temperature (RT) to 100 C with ε{sub r} > 28 000 (at 1 kHz) when compared to other samples. By using a complex impedance analysis technique, bulk grain, grain boundary, and electrode response were found to affect the dielectric behavior that could be related to the Maxwell-Wagner polarization mechanism. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Trends of microwave dielectric materials for antenna application

Energy Technology Data Exchange (ETDEWEB)

Sulong, T. A. T., E-mail: tuanamirahtuansulong@gmail.com; Osman, R. A. M., E-mail: rozana@unimap.edu.my [School of Microelectronic Engineering, Universiti Malaysia Perlis, Pauh Putra Campus, 02600 Arau, Perlis (Malaysia); Idris, M. S., E-mail: sobri@unimap.edu.my [Sustainable Engineering Research Cluster, School of Material Engineering, Universiti Malaysia Perlis, Blok B, Taman Pertiwi Indah, Seriab, 01000 Kangar, Perlis (Malaysia)

2016-07-19

Rapid development of a modern microwave communication system requires a high quality microwave dielectric ceramic material to be used as mobile and satellite communication. High permittivity of dielectric ceramics leads to fabrication of compact device for electronic components. Dielectric ceramics which used for microwave applications required three important parameters such as high or appropriate permittivity (ε{sub r}), high quality factor (Q {sub f} ≥ 5000 GH z) and good temperature coefficient of resonant frequency (τ{sub f}). This paper review of various dielectric ceramic materials used as microwave dielectric materials and related parameters for antenna applications.

Temperature-Frequency Converter Using a Liquid Crystal Cell as a Sensing Element

Directory of Open Access Journals (Sweden)

José Isidro Santos

2012-03-01

Full Text Available A new temperature-frequency converter based on the variation of the dielectric permittivity of the Liquid Crystal (LC material with temperature has been demonstrated. Unlike other temperature sensors based on liquid crystal processing optical signals for determining the temperature, this work presents a system that is able to sense temperature by using only electrical signals. The variation of the dielectric permittivity with temperature is used to modify the capacitance of a plain capacitor using a LC material as non-ideal dielectric. An electric oscillator with an output frequency depending on variable capacitance made of a twisted-nematic (TN liquid crystal (LC cell has been built. The output frequency is related to the temperature of LC cell through the equations associated to the oscillator circuit. The experimental results show excellent temperature sensitivity, with a variation of 0.40% of the initial frequency per degree Celsius in the temperature range from −6 °C to 110 °C.

Dielectric properties of gadolinium molybdate in low- and infralow frequency electric fields. Diehlektricheskie svojstva molibdata gadoliniya v nizko- i infranizkochastotnykh ehlektricheskikh polyakh

Energy Technology Data Exchange (ETDEWEB)

Galiyarova, N M; Gorin, S V; Dontsova, L I; Shil' nikov, A V; Shuvalov, L A [Volgogradskij Inzhenerno-Stroitel' nyj Inst., Volgograd (Russian Federation) AN SSSR, Moscow (Russian Federation). Inst. Kristallografii

1992-10-01

Temperature dependences of complex dielectric permittivity of gadolinium molybdate (GMO) in low- (LF) and infralow-frequency (ILF) electric fields with 0.1 V[center dot]cm[sup -1] amplitude within 0.25-10[sup 4] Hz frequency range are studied. Substantial effect of the crystal prehistory on LF and ILF dielectric properties and domain structure state is revealed. An anomalous reduction of complex dielectric permittivity accompanied by the occurrence of the Debye LF-dispersion of permittivity is detected under the sample cooling from a nonpolar phase.

Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN

Science.gov (United States)

Hiraiwa, Atsushi; Sasaki, Toshio; Okubo, Satoshi; Horikawa, Kiyotaka; Kawarada, Hiroshi

2018-04-01

Atomic-layer-deposited (ALD) Al2O3 films are the most promising surface passivation and gate insulation layers in non-Si semiconductor devices. Here, we carried out an extensive study on the time-dependent dielectric breakdown characteristics of ALD-Al2O3 films formed on homo-epitaxial GaN substrates using two different oxidants at two different ALD temperatures. The breakdown times were approximated by Weibull distributions with average shape parameters of 8 or larger. These values are reasonably consistent with percolation theory predictions and are sufficiently large to neglect the wear-out lifetime distribution in assessing the long-term reliability of the Al2O3 films. The 63% lifetime of the Al2O3 films increases exponentially with a decreasing field, as observed in thermally grown SiO2 films at low fields. This exponential relationship disproves the correlation between the lifetime and the leakage current. Additionally, the lifetime decreases with measurement temperature with the most remarkable reduction observed in high-temperature (450 °C) O3-grown films. This result agrees with that from a previous study, thereby ruling out high-temperature O3 ALD as a gate insulation process. When compared at 200 °C under an equivalent SiO2 field of 4 MV/cm, which is a design guideline for thermal SiO2 on Si, high-temperature H2O-grown Al2O3 films have the longest lifetimes, uniquely achieving the reliability target of 20 years. However, this target is accomplished by a relatively narrow margin and, therefore, improvements in the lifetime are expected to be made, along with efforts to decrease the density of extrinsic Al2O3 defects, if any, to promote the practical use of ALD Al2O3 films.

Dielectric loss of strontium titanate thin films

Science.gov (United States)

Dalberth, Mark Joseph

1999-12-01

Interest in strontium titanate (STO) thin films for microwave device applications continues to grow, fueled by the telecommunications industry's interest in phase shifters and tunable filters. The optimization of these devices depends upon increasing the phase or frequency tuning and decreasing the losses in the films. Currently, the dielectric response of thin film STO is poorly understood through lack of data and a theory to describe it. We have studied the growth of STO using pulsed laser deposition and single crystal substrates like lanthanum aluminate and neodymium gallate. We have researched ways to use ring resonators to accurately measure the dielectric response as a function of temperature, electric field, and frequency from low radio frequencies to a few gigahertz. Our films grown on lanthanum aluminate show marked frequency dispersion in the real part of the dielectric constant and hints of thermally activated loss behavior. We also found that films grown with conditions that optimized the dielectric constant showed increased losses. In an attempt to simplify the system, we developed a technique called epitaxial lift off, which has allowed us to study films removed from their growth substrates. These free standing films have low losses and show obvious thermally activated behavior. The "amount of tuning," as measured by a figure of merit, KE, is greater in these films than in the films still attached to their growth substrates. We have developed a theory that describes the real and imaginary parts of the dielectric constant. The theory models the real part using a mean field description of the ionic motion in the crystal and includes the loss by incorporating the motion of charged defects in the films.

Computation of Dielectric Response in Molecular Solids for High Capacitance Organic Dielectrics.

Science.gov (United States)

Heitzer, Henry M; Marks, Tobin J; Ratner, Mark A

2016-09-20

progress. An accurate and efficient theoretical computational approach could drastically decrease this time by screening potential dielectric materials and providing reliable design rules for future molecular dielectrics. Until recently, accurate calculation of dielectric responses in molecular materials was difficult and highly approximate. Most previous modeling efforts relied on classical formalisms to relate molecular polarizability to macroscopic dielectric properties. These efforts often vastly overestimated polarizability in the subject materials and ignored crucial material properties that can affect dielectric response. Recent advances in first-principles calculations via density functional theory (DFT) with periodic boundary conditions have allowed accurate computation of dielectric properties in molecular materials. In this Account, we outline the methodology used to calculate dielectric properties of molecular materials. We demonstrate the validity of this approach on model systems, capturing the frequency dependence of the dielectric response and achieving quantitative accuracy compared with experiment. This method is then used as a guide to new high-capacitance molecular dielectrics by determining what materials and chemical properties are important in maximizing dielectric response in self-assembled monolayers (SAMs). It will be seen that this technique is a powerful tool for understanding and designing new molecular dielectric systems, the properties of which are fundamental to many scientific areas.

Dielectric and thermal properties of the methacrylate polymer bearing chalcone side group

Science.gov (United States)

Çelik, Taner; Coşkun, Mehmet Fatih

2018-04-01

The 1-(1-benzofuran-2yl)-3-(4-hydroxyphenyl)propen-1-one (compound 1) from the reaction between 1-(1-benzofuran-2-yl) ethanone and 4-hydroxybenzaldehyde was firstly synthesized. And secondly, we synthesized 4-[3-(1-benzofuran-2-yl)-3-oxoprop-1-en-1-yl] phenyl chloroacetate (compound 2) as the result of the reaction between the compound 1 and chloroacetyl chloride. The monomer was prepared by the reaction of compound 2 and sodium methacrylate. The monomer was polymerized using the free radicalic polymerization method (FRP). The structure characterization of the polymer was determined utilizing 1H,13C- NMR and FT-IR techniques. Thermal behaviour of the homopolymer was studied by measurements of TGA and DSC. For thermal decomposition kinetics of homopolymer, Flynn-Wall-Ozawa method was applied to thermogravimetry curves. The dielectric measurements were studied using the impedance analyzer technique at a frequency which varied between 100 Hz and 20 kHz Hz depending on the alternating current (AC) conductivities. The dielectric parameters such as dielectric constant and dielectric loss are changed with the temperature.

Preparation and properties of mesoporous silica/bismaleimide/diallylbisphenol composites with improved thermal stability, mechanical and dielectric properties

Directory of Open Access Journals (Sweden)

2011-06-01

Full Text Available New composites with improved thermal stability, mechanical and dielectric properties were developed, which consist of 2,2'-diallylbisphenol A (DBA/4,4'-bismaleimidodiphenylmethane (BDM resin and a new kind of organic/inorganic mesoporous silica (MPSA. Typical properties (curing behavior and mechanism, thermal stability, mechanical and dielectric properties of the composites were systematically investigated, and their origins were discussed. Results show that MPSA/DBA/BDM composites have similar curing temperature as DBA/BDM resin does; however, they have different curing mechanisms, and thus different crosslinked networks. The content of MPSA has close relation with the integrated performance of cured composites. Compared with cured DBA/BDM resin, composites with suitable content of MPSA show obviously improved flexural strength and modulus as well as impact strength; in addition, all composites not only have lower dielectric constant and similar frequency dependence, more interestingly, they also exhibit better stability of frequency on dielectric loss. For thermal stability, the addition of MPSA to DBA/BDM resin significantly decreases the coefficient of thermal expansion, and improves the char yield at high temperature with a slightly reduced glass transition temperature. All these differences in macro-properties are attributed to the different crosslinked networks between MPSA/DBA/BDM composites and DBA/BDM resin.

Temperature dependence of nuclear surface properties

International Nuclear Information System (INIS)

Campi, X.; Stringari, S.

1982-01-01

Thermal properties of nuclear surface are investigated in a semi-infinite medium. Explicit analytical expression are given for the temperature dependence of surface thickness, surface energy and surface free energy. In this model the temperature effects depend critically on the nuclear incompressibility and on the shape of the effective mass at the surface. To illustrate the relevance of these effects we made an estimate of the temperature dependence of the fission barrier height. (orig.)

Effects of gas temperature in the plasma layer on RONS generation in array-type dielectric barrier discharge at atmospheric pressure

Science.gov (United States)

Yoon, Sung-Young; Yi, Changho; Eom, Sangheum; Park, Seungil; Kim, Seong Bong; Ryu, Seungmin; Yoo, Suk Jae

2017-12-01

In this work, we studied the control of plasma-produced species under a fixed gas composition (i.e., ambient air) in a 10 kHz-driven array-type dielectric barrier atmospheric-pressure plasma discharge. Instead of the gas composition, only the gas velocity was controlled. Thus, the plasma-maintenance cost was considerably lower than methods such as external N2 or O2 injection. The plasma-produced species were monitored using Fourier transformed infrared spectroscopy. The discharge properties were measured using a voltage probe, current probe, infrared camera, and optical emission spectroscopy. The results showed that the major plasma products largely depend on the gas temperature in the plasma discharge layer. The gas temperature in the plasma discharge layer was significantly different to the temperature of the ceramic adjacent to the plasma discharge layer, even in the small discharge power density of ˜15 W/cm2 or ˜100 W/cm3. Because the vibrational excitation of N2 was suppressed by the higher gas flow, the major plasma-produced species shifted from NOx in low flow to O3 in high flow.

L-band Dielectric Constant Measurements of Seawater (Oral presentation and SMOS Poster)

Science.gov (United States)

Lang, Roger H.; Utku, Cuneyt; LeVine, David M.

2003-01-01

This paper describes a resonant cavity technique for the measurement of the dielectric constant of seawater as a function of its salinity. Accurate relationships between salinity and dielectric constant (which determines emissivity) are needed for sensor systems such as SMOS and Aquarius that will monitor salinity from space in the near future. The purpose of the new measurements is to establish the dependence of the dielectric constant of seawater on salinity in contemporary units (e.g. psu) and to take advantage of modern instrumentation to increase the accuracy of these measurements. The measurement device is a brass cylindrical cavity 16cm in diameter and 7cm in height. The seawater is introduced into the cavity through a slender glass tube having an inner diameter of 0.1 mm. By assuming that this small amount of seawater slightly perturbs the internal fields in the cavity, perturbation theory can be employed. A simple formula results relating the real part of the dielectric constant to the change in resonant frequency of the cavity. In a similar manner, the imaginary part of the dielectric constant is related to the change in the cavity s Q. The expected accuracy of the cavity technique is better than 1% for the real part and 1 to 2% for the imaginary part. Presently, measurements of methanol have been made and agree with precision measurements in the literature to within 1% in both real and imaginary parts. Measurements have been made of the dielectric constant of seawater samples from Ocean Scientific in the United Kingdom with salinities of 10, 30, 35 and 38 psu. All measurements were made at room temperature. Plans to make measurements at a range of temperatures and salinities will be discussed.

Microstrip patch antenna for simultaneous strain and temperature sensing

Science.gov (United States)

Mbanya Tchafa, F.; Huang, H.

2018-06-01

A patch antenna, consisting of a radiation patch, a dielectric substrate, and a ground plane, resonates at distinct fundamental frequencies that depend on the substrate dielectric constant and the dimensions of the radiation patch. Since these parameters change with the applied strain and temperature, this study investigates simultaneous strain and temperature sensing using a single antenna that has two fundamental resonant frequencies. The theoretical relationship between the antenna resonant frequency shifts, the temperature, and the applied strain was first established to guide the selection of the dielectric substrate, based on which an antenna sensor with a rectangular radiation patch was designed and fabricated. A tensile test specimen instrumented with the antenna sensor was subjected to thermo-mechanical tests. Experiment results validated the theoretical predictions that the normalized antenna resonant frequency shifts are linearly proportional to the applied strain and temperature changes. An inverse method was developed to determine the strain and temperature changes from the normalized antenna resonant frequency shifts, yielding measurement uncertainty of 0.4 °C and 17.22 μ \\varepsilon for temperature and strain measurement, respectively.

Chemical composition-tailored Li{sub x}Ti{sub 0.1}Ni{sub 1−x}O ceramics with enhanced dielectric properties

Energy Technology Data Exchange (ETDEWEB)

Puli, Venkata Sreenivas, E-mail: pvsri123@gmail.com [Department of Mechanical Engineering, University of Texas, El Paso, TX 79968 (United States); Orozco, Cristian [Department of Mechanical Engineering, University of Texas, El Paso, TX 79968 (United States); Picchini, Randall [Department of Electrical Engineering, University of California, Santa Barbara, CA 93106-512 (United States); Ramana, C.V. [Department of Mechanical Engineering, University of Texas, El Paso, TX 79968 (United States)

2016-12-01

This paper reports on the synthesis of polycrystalline (Li,Ti)-doped NiO powders (i.e., Li{sub x}Ti{sub 0.1}Ni{sub 1−x}O, abbreviated as LTNO) by the solid-state synthesis method. Note that, the doping concentration of Ti is kept constant (x∼0.10) in the stoichiometry, the difference in the material behavior of LTNO samples can only be attributed to the effect of Li. X-ray diffraction patterns confirmed a cubic rock-salt structured NiO-based phase with the presence of minor NiTiO{sub 3} phase, were reported elsewhere [Venkata et al., Chem. Phys. Lett., 649 (2016) 115–118.]. Dense microstructures were obtained using ultra high resolution scanning electron microscope. A high dielectric constant (ε∼10{sup 4}) near room temperature at low-frequency was observed in LTNO ceramics. Weak temperature dependence of dielectric constant over the measured compositions (x = 0 to 0.10) was observed in the LTNO ceramics. A giant dielectric constant of 10{sup 4}–10{sup 5} at high temperatures (120–170 °C) for certain LTNO compositions (x = 0.15 to 0.3) was observed in the sintered ceramics. The origin of the high dielectric constant observed in these LTNO ceramics is attributed to the Maxwell–Wagner polarization mechanism and a thermally activated mechanism. - Highlights: • Li content strongly influences the structure and dielectric properties. • Li-incorporation enhances the dielectric properties of LTNO. • A giant dielectric constant of 10{sup 4}–10{sup 5} at high temperatures (120–170 °C). • Giant dielectric constant is attributed to the Maxwell–Wagner polarization. • NTCR behavior is also confirmed from impedance spectroscopy results.

Dielectric spectroscopy in aqueous solutions of paracetamol over the frequency range of 20 Hz to 2 MHz at 293.15 K temperature

Science.gov (United States)

Pandit, T. R.; Rana, V. A.

2018-05-01

Frequency domain dielectric relaxation spectroscopy plays an important role in the study of pharmaceutical drug molecules. The complex relative dielectric permittivity ɛ*(ω) = ɛ' - j ɛ" of aqueous solutions of paracetamol in the frequency range of 20 Hz to 2 MHz at a temperature range of 293.15 K are measured with the help of Agilent precision LCR meter E4980A along with four terminal liquid test fixture Agilent 16452A. Data of complex relative permittivity are used to calculate loss tangent for all concentrations of paracetamol in distilled water. Electrode polarization relaxation time has been calculated for all solutions. Effect of variation of concentrations of paracetamol in distilled water on these dielectric parameters is discussed.

Photoacoustic and dielectric spectroscopic studies of 4-dimethylamino-n-methyl-4-stilbazolium tosylate single crystal: An efficient terahertz emitter

Science.gov (United States)

Manivannan, M.; Martin Britto Dhas, S. A.; Jose, M.

2016-12-01

Bulk terahertz emitting single crystal of 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) was synthesized by condensation method and grown by slow solvent evaporation technique from methanol. The structure and cell parameters of the grown crystals were derived from single crystal and powder X-ray diffraction analyses and the optical properties of the crystal were analyzed by UV-Vis Spectrophotometer. The presence of functional groups was identified by FTIR and FT-Raman spectroscopic studies. We demonstrated that in DAST crystal, the thermal transport properties such as thermal conductivity, thermal diffusivity and thermal effusivity are better than several well recognized standard materials using photoacoustic spectrophotometer. The dielectric measurement was made as a function of frequency (1 Hz-35 MHz) at different temperatures (30-200 °C). The dielectric constant and dielectric loss were found to be strongly dependent on temperature and frequency of the applied electric field. The semicircle in the cole-cole plot showed the presence of dielectric relaxation in the crystal with its diameter representing the resistance of the crystal. The resistivity and ac conductivity were calculated from the measured dielectric data.

Temperature dependence of plastic scintillators

Science.gov (United States)

Peralta, L.

2018-03-01

Plastic scintillator detectors have been studied as dosimeters, since they provide a cost-effective alternative to conventional ionization chambers. Several articles have reported undesired response dependencies on beam energy and temperature, which provides the motivation to determine appropriate correction factors. In this work, we studied the light yield temperature dependency of four plastic scintillators, BCF-10, BCF-60, BC-404, RP-200A and two clear fibers, BCF-98 and SK-80. Measurements were made using a 50 kVp X-ray beam to produce the scintillation and/or radioluminescence signal. The 0 to 40 °C temperature range was scanned for each scintillator, and temperature coefficients were obtained.

Extrinsic and intrinsic contributions for dielectric behavior of La{sub 2}NiMnO{sub 6} ceramic

Energy Technology Data Exchange (ETDEWEB)

Cao, Zhenzhu, E-mail: czz03@163.com [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Liu, Xiaoting; He, Weiyan [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China); Ruan, Xuezheng [Key Laboratory of Inorganic Function Material and Device, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Gao, Yanfang; Liu, Jinrong [Chemical Engineering College of Inner Mongolia University of Technology, Hohhot 010051 (China)

2015-11-15

The influences of electrode material, DC bias and temperature on the electrical and dielectric properties of LNMO ceramic have been investigated using impedance spectroscopy and dielectric measurements. Evidences from dielectric and impedance analysis showed that the giant dielectric constant and its notable tunability originated from extrinsic contribution from interface polarization. Low temperature and high frequency dielectric characterization revealed the low intrinsic dielectric constant.

Characterization, Microstructure, and Dielectric properties of cubic pyrochlore structural ceramics

KAUST Repository

Li, Yangyang

2013-05-01

The (BMN) bulk materials were sintered at 1050°C, 1100°C, 1150°C, 1200°C by the conventional ceramic process, and their microstructure and dielectric properties were investigated by Scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, Transmission electron microscopy (TEM) (including the X-ray energy dispersive spectrometry EDS and high resolution transmission electron microscopy HRTEM) and dielectric impedance analyzer. We systematically investigated the structure, dielectric properties and voltage tunable property of the ceramics prepared at different sintering temperatures. The XRD patterns demonstrated that the synthesized BMN solid solutions had cubic phase pyrochlore-type structure when sintered at 1050°C or higher, and the lattice parameter (a) of the unit cell in BMN solid solution was calculated to be about 10.56Å. The vibrational peaks observed in the Raman spectra of BMN solid solutions also confirmed the cubic phase pyrochlore-type structure of the synthesized BMN. According to the Scanning Electron Microscope (SEM) images, the grain size increased with increasing sintering temperature. Additionally, it was shown that the densities of the BMN ceramic tablets vary with sintering temperature. The calculated theoretical density for the BMN ceramic tablets sintered at different temperatures is about 6.7521 . The density of the respective measured tablets is usually amounting more than 91% and 5 approaching a maximum value of 96.5% for sintering temperature of 1150°C. The microstructure was investigated by using Scanning Transmission Electron Microscope (STEM), X-ray diffraction (XRD). Combined with the results obtained from the STEM and XRD, the impact of sintering temperature on the macroscopic and microscopic structure was discussed. The relative dielectric constant ( ) and dielectric loss ( ) of the BMN solid solutions were measured to be 161-200 and (at room temperature and 100Hz-1MHz), respectively. The BMN solid

Temperature dependence of nonsteady radiation conductivity of polymers

International Nuclear Information System (INIS)

Tyutnev, A.P.; Saenko, V.S.; Dunaev, A.F.; Sichkar', V.P.; Vannikov, A.V.

1984-01-01

Influence of temperature on non-steady radiation conductivity (NRC) of polymeric dielectrics is investigated. It is revealed that the temperature effects first of all delayed NRC constituent. Temperature increase up to 100 deg C is followed by certain slowing down the rate of current drop of induced conductivity, in this case the nature of the volt-ampere characteristic of delayed NRC constituent does not essentially change, as a rule. The obtained experimental results interpreted in the frames of the band model permitted to make conclusions on the effect of chemical structure of the polymer on its NRC. Presence of carbazole or phenylic groups in the elementary chain is shown to increase the delayed constituent of induced conductivity and to ensure prevailing yield of free charges. Appearance of methyl groups in the composition of the chain essentially suppresses the delayed constituent and results in high values of activation energy and rather slowed down current drop

Modeling the temperature dependence of thermophysical properties: Study on the effect of temperature dependence for RFA.

Science.gov (United States)

Watanabe, Hiroki; Kobayashi, Yo; Hashizume, Makoto; Fujie, Masakatsu G

2009-01-01

Radio frequency ablation (RFA) has increasingly been used over the past few years and RFA treatment is minimally invasive for patients. However, it is difficult for operators to control the precise formation of coagulation zones due to inadequate imaging modalities. With this in mind, an ablation system using numerical simulation to analyze the temperature distribution of the organ is needed to overcome this deficiency. The objective of our work is to develop a temperature dependent thermophysical liver model. First, an overview is given of the development of the thermophysical liver model. Second, a simulation to evaluate the effect of temperature dependence of the thermophysical properties of the liver is explained. Finally, the result of the simulation, which indicated that the temperature dependence of thermophysical properties accounts for temperature differences influencing the accuracy of RFA treatment is described.

Dielectric relaxation studies in super-cooled liquid and glassy phases of anti-cancerous alkaloid: Brucine

Science.gov (United States)

Afzal, Aboothahir; Shahin Thayyil, M.; Sulaiman, M. K.; Kulkarni, A. R.

2018-05-01

Brucine has good anti-tumor effects, on both liver cancer and breast cancer. It has bioavailability of 40.83%. Since the bioavailability of the drug is low, an alternative method to increase its bioavailability and solubility is by changing the drug into glassy form. We used Differential Scanning Calorimetry (DSC) for studying the glass forming ability of the drug. Brucine was found to be a very good glass former glass transition temperature 365 K. Based on the DSC analysis we have used broadband dielectric spectroscopy (BDS) for studying the drug in the super cooled and glassy state. BDS is an effective tool to probe the molecular dynamics in the super cooled and glassy state. Molecular mobility is found to be present even in the glassy state of this active pharmaceutical ingredient (API) which is responsible for the instability. Our aim is to study the factors responsible for instability of this API in amorphous form. Cooling curves for dielectric permittivity and dielectric loss revealed the presence of structural (α) and secondary relaxations (β and γ). Temperature dependence of relaxation time is fitted by Vogel-Fulcher-Tammann equation and found the values of activation energy of the α relaxation, fragility and glass transition temperature. Paluch's anti correlation is also verified, that the width of the α-loss peak at or near the glass transition temperature Tg is strongly anticorrelated with the polarity of the molecule. The larger the dielectric relaxation strength Δɛ (Tg) of the system, the narrower is the α-loss peak (higher value of βKWW).

Finite-temperature Casimir effect in the presence of nonlinear dielectrics

DEFF Research Database (Denmark)

Kheirandish, Fardin; Amooghorban, Ehsan; Soltani, Morteza

2011-01-01

Starting from a Lagrangian, the electromagnetic field in the presence of a nonlinear dielectric medium is quantized using path-integral techniques, and correlation functions of different fields are calculated. The susceptibilities of the nonlinear medium are obtained, and their relations to coupl......Starting from a Lagrangian, the electromagnetic field in the presence of a nonlinear dielectric medium is quantized using path-integral techniques, and correlation functions of different fields are calculated. The susceptibilities of the nonlinear medium are obtained, and their relations...

A modified Poisson-Boltzmann surface excess calculation with a field dependent dielectric constant

International Nuclear Information System (INIS)

Gordillo, G.J.; Molina, F.V.; Posadas, D.

1990-01-01

The Unequal Radius Modified Gouy-Chapman (URMGC) was applied to mixtures of electrolytes. It was considered that the two anions, (1) and (2), have different radius, r 1 and r 2 , being r 2 smaller than r 1 . The dielectric constant was taken as a function of the electric field, using the theoretical Booth equation, or as a linear dependence varying between 6 and 78 when r 2 1 . The results show that the surface excess of anion 2 is much greater than the one predicted by Gouy-Chapman theory when the proportion of 2 increases in the mixture, while both the other anion and the cation show negative deviation. This effect is more evident in mixtures than in the case of single electrolytes, and has a maximum for a composition that depends on the chosen parameters for the model. (Author) [es

Analysis of mobile ionic impurities in polyvinylalcohol thin films by thermal discharge current and dielectric impedance spectroscopy

Directory of Open Access Journals (Sweden)

M. Egginger

2012-12-01

Full Text Available Polyvinylalcohol (PVA is a water soluble polymer frequently applied in the field of organic electronics for insulating thin film layers. By-products of PVA synthesis are sodium acetate ions which contaminate the polymer material and can impinge on the electronic performance when applied as interlayer dielectrics in thin film transistors. Uncontrollable voltage instabilities and unwanted hysteresis effects are regularly reported with PVA devices. An understanding of these effects require knowledge about the electronic dynamics of the ionic impurities and their influence on the dielectric properties of PVA. Respective data, which are largely unknown, are being presented in this work. Experimental investigations were performed from room temperature to 125°C on drop-cast PVA films of three different quality grades. Data from thermal discharge current (TDC measurements, polarization experiments, and dielectric impedance spectroscopy concurrently show evidence of mobile ionic carriers. Results from TDC measurements indicate the existence of an intrinsic, build-in electric field of pristine PVA films. The field is caused by asymmetric ionic double layer formation at the two different film-interfaces (substrate/PVA and PVA/air. The mobile ions cause strong electrode polarization effects which dominate dielectric impedance spectra. From a quantitative electrode polarization analysis of isothermal impedance spectra temperature dependent values for the concentration, the mobility and conductivity together with characteristic relaxation times of the mobile carriers are given. Also shown are temperature dependent results for the dc-permittivity and the electronic resistivity. The obtained results demonstrate the feasibility to partly remove contaminants from a PVA solution by dialysis cleaning. Such a cleaning procedure reduces the values of ion concentration, conductivity and relaxation frequency.

Liquid-filled ionization chamber temperature dependence

Energy Technology Data Exchange (ETDEWEB)

Franco, L. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain)]. E-mail: luciaff@usc.es; Gomez, F. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Iglesias, A. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pardo, J. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pazos, A. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Pena, J. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain); Zapata, M. [Dpto. de Fisica de Particulas, Facultade de Fisica, Universidade de Santiago, Campus Sur S/N, 15782 Santiago de Compostela (Spain)

2006-05-10

Temperature and pressure corrections of the read-out signal of ionization chambers have a crucial importance in order to perform high-precision absolute dose measurements. In the present work the temperature and pressure dependences of a sealed liquid isooctane filled ionization chamber (previously developed by the authors) for radiotherapy applications have been studied. We have analyzed the thermal response of the liquid ionization chamber in a {approx}20 deg. C interval around room temperature. The temperature dependence of the signal can be considered linear, with a slope that depends on the chamber collection electric field. For example, a relative signal slope of 0.27x10{sup -2}K{sup -1} for an operation electric field of 1.67x10{sup 6}Vm{sup -1} has been measured in our detector. On the other hand, ambient pressure dependence has been found negligible, as expected for liquid-filled chambers. The thermal dependence of the liquid ionization chamber signal can be parametrized within the Onsager theory on initial recombination. Considering that changes with temperature of the detector response are due to variations in the free ion yield, a parametrization of this dependence has been obtained. There is a good agreement between the experimental data and the theoretical model from the Onsager framework.

Impedance spectroscopic and dielectric analysis of Ba0.7Sr0.3TiO3 thin films

International Nuclear Information System (INIS)

Rouahi, A.; Kahouli, A.; Sylvestre, A.; Defaÿ, E.; Yangui, B.

2012-01-01

Highlights: ► The material exhibits the contribution of both grain and grain boundaries in the electric response of Ba 0.7 Sr 0.3 TiO 3 . ► The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film. ► The frequency dependence of ac conductivity exhibits a polaron hopping mechanism with activation energy of 0.38 eV. ► The complex dielectric modulus analysis confirmed the presence of a non-Debye type of conductivity relaxation deduced from the KWW function. - Abstract: Polycrystalline Ba 0.7 Sr 0.3 TiO 3 thin film with Pt/BST/Pt/TiO 2 /SiO 2 structure was prepared by ion beam sputtering. The film was post annealed at 700 °C. The dielectric and electric modulus properties were studied by impedance spectroscopy over a wide frequency range [0.1–10 5 Hz] at different temperatures [175–350 °C]. The Nyquist plots (Z″ vs . Z′) show the contribution of both grain and grain boundaries at higher temperature on the electric response of BST thin films. Moreover, the resistance of grains decreases with the rise in temperature and the material exhibits a negative temperature coefficient of resistance. The electric modulus plot indicates the non-Debye type of dielectric relaxation. The values of the activation energy computed from both plots of Z″ and M″ are 0.86 eV and 0.81 eV respectively, which reveals that the species responsible for conduction are the same. The scaling behavior of M ″ /M ″ max shows the temperature independent nature of relaxation time. The plot of normalized complex dielectric modulus and impedance as a function of frequency exhibits both short and long-range conduction in the film.

Boron nitride hollow nanospheres: Synthesis, formation mechanism and dielectric property

Energy Technology Data Exchange (ETDEWEB)

Zhong, B.; Tang, X.H. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Huang, X.X., E-mail: swliza@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Xia, L. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Zhang, X.D. [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Wang, C.J. [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); Wen, G.W., E-mail: g.wen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology at Weihai, Weihai 264209 (China); School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China)

2015-04-15

Highlights: • BN hollow nanospheres are fabricated in large scale via a new CVD method. • Morphology and structure are elucidated by complementary analytical techniques. • Formation mechanism is proposed based on experimental observations. • Dielectric properties are investigated in the X-band microwave frequencies. • BN hollow nanospheres show lower dielectric loss than regular BN powders. - Abstract: Boron nitride (BN) hollow nanospheres have been successfully fabricated by pyrolyzing vapors decomposed from ammonia borane (NH{sub 3}BH{sub 3}) at 1300 °C. The final products have been extensively characterized by X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. The BN hollow nanospheres were ranging from 100 to 300 nm in diameter and around 30–100 nm in thickness. The internal structure of the products was found dependent on the reaction temperatures. A possible formation mechanism of the BN hollow nanospheres was proposed on the basis of the experimental observations. Dielectric measurements in the X-band microwave frequencies (8–12 GHz) showed that the dielectric loss of the paraffin filled by the BN hollow nanospheres was lower than that filled by regular BN powders, which indicated that the BN hollow nanospheres could be potentially used as low-density fillers for microwave radomes.

Tailoring order–disorder temperature and microwave dielectric properties of Ba[(Co0.6Zn0.41/3Nb2/3]O3 ceramics

Directory of Open Access Journals (Sweden)

Tu Lai Sun

2016-03-01

Full Text Available The order–disorder temperature (To–d of Ba[(Co0.6Zn0.41/3Nb2/3]O3 ceramics was determined via X-ray diffraction, Raman spectroscopy and differential thermal analysis, respectively. To–d was determined to be between 1425 and 1450 °C by a quenching method. The endothermic peak in the DTA curve shows the order–disorder transition. B2O3 was applied to tune the densification temperature (Ts and tailor the microwave dielectric properties. The ordering degree and unloaded quality factor (Qf are improved when Ts is reduced to 1400 °C at B2O3 content of 0.25 mol%. Ts is further decreased and the ordering degree and Qf are decreased when B2O3 content is increased to 0.5 mol%. The dielectric constant (εr and temperature coefficient of resonant frequency (τf decrease slightly with increasing B2O3 content. The optimum microwave dielectric properties (i.e., εr = 34.0, Qf = 50,400 GHz, τf = 5.5 × 10−6/°C are obtained for the Ba[(Co0.6Zn0.41/3Nb2/3]O3-0.25 mol% B2O3 ceramics sintered at a lower temperature.

AC electrical conductivity and dielectric relaxation studies on n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC)

Science.gov (United States)

Qashou, Saleem I.; Darwish, A. A. A.; Rashad, M.; Khattari, Z.

2017-11-01

Both Alternating current (AC) conductivity and dielectric behavior of n-type organic thin films of N, N‧-Dimethyl-3,4,9,10-perylenedicarboximide (DMPDC) have been investigated. Fourier transformation infrared (FTIR) spectroscopy is used for identifying both powder and film bonds which confirm that there are no observed changes in the bonds between the DMPDC powder and evaporated films. The dependence of AC conductivity on the temperature for DMPDC evaporated films was explained by the correlated barrier hopping (CBH) model. The calculated barrier height using CBH model shows a decreasing behavior with increasing temperature. The mechanism of dielectric relaxation was interpreted on the basis of the modulus of the complex dielectric. The calculated activation energy of the relaxation process was found to be 0.055 eV.

Temperature stimulates charge carriers in Ce0.90Fe0.1O2 for semiconductor to metal phase

Science.gov (United States)

Parveen, Mubeena; Saravanan, G.; Asvini, V.; Ravichandran, K.; Kalaiselvi, D.

2018-04-01

Ce0.90Fe0.1O2, cubic structure exhibits interesting electrical property-due to the effects of oxygen vacancies. Electrical response of nanocrystalline Ce0.90Fe0.1O2 material as a function of temperature was investigated using impedance spectroscopy. A change was observed in Nyquist plot for the temperature 903k, which has been analysed in terms of localized and delocalized electrons. An interesting behaviour of temperature stimulate semiconductor to metal like transition was observed in frequency dependent dielectric constant (ɛ') and frequency dependent dielectric loss(tan δ). Frequency dependence on the real and imaginary part of impedence with respect to temperature aids the presences of semiconductor to metal like transition in Ce0.90Fe0.1O2.

Dielectric properties of lanthanum gallate (LaGaO3) crystal

Science.gov (United States)

Dube, D. C.; Scheel, H. J.; Reaney, I.; Daglish, M.; Setter, N.

1994-04-01

Dielectric properties of single crystals of LaGaO3 have been measured at low frequencies as well as in the microwave region over a wide temperature range. Measurements performed on two crystal orientations, viz. (001) and (110), show dielectric anomalies at a transition near 145 °C. Dielectric anisotropy below, but not above, 145 °C confirm the previously reported orthorhombic symmetry at room temperature and rhombohedral symmetry above 145 °C. Domain wall motion which arises as a result of a phase transition has been observed around 145 °C.

Dielectric relaxation spectra of liquid crystals in relation to molecular structure

International Nuclear Information System (INIS)

Wrobel, S.

1986-07-01

The dielectric spectra obtained for some members of two homologous series, i.e. for di-alkoxyazoxybenzenes and penthyl-alkoxythiobenzoates, are discussed qualitatively on the basis of the Nordio-Rigatti-Segre diffusion model. It is additionally assumed that the molecular reorientations take place about the principal axes of the inertia tensor. The distribution of correlation times, which is strongly temperature dependent in the vicinity of the clearing point, is interpreted as being caused by fluctuations of the principal axes frame which are due to conformation changes inside the end chains. The Bauer equation is used to describe both principal molecular reorientations, i.e. the reorientations about the long and short axis, observed in liquid crystalline structure by means of dielectric relaxation methods. The energies and entropies of activation have been computed for both principal reorientations. The differences between the high frequency limit of the dielectric permittivity and the refractive index squared of liquid crystals are explained in terms of two librational motions of the molecules observed by other experimental techniques, viz. far infra-red, Raman and inelastic neutron scattering spectroscopies, and found in this work on the basis of dielectrically measured energy barriers. It has been shown qualitatively that intramolecular libratory motions greatly effect the high frequency dielectric spectrum. Finally, molecular motions in liquid crystals are divided into two types: coherent and incoherent. 127 refs., 56 figs., 17 tabs. (author)

Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

NARCIS (Netherlands)

Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

1996-01-01

Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

(Ba+Sr)/Ti ratio dependence of the dielectric properties for (Ba0.5Sr0.5)TiO3 thin films prepared by ion beam sputtering

Science.gov (United States)

Yamamichi, Shintaro; Yabuta, Hisato; Sakuma, Toshiyuki; Miyasaka, Yoichi

1994-03-01

(Ba0.5Sr0.5)TiO3 thin films were prepared by ion beam sputtering from powder targets with (Ba+Sr)/Ti ratios ranging from 0.80 to 1.50. All of the perovskite (Ba,Sr)TiO3 films were single phase except for the film with a (Ba+Sr)/Ti ratio of 1.41. The dielectric constant values notably depended on the (Ba+Sr)/Ti ratio for films thicker than 70 nm. The highest dielectric constant of 580 was achieved for the 5% (Ba+Sr) rich film. This (Ba+Sr)/Ti ratio dependence was diminished by the thickness dependence for thinner films. The grain sizes for the 9% (Ba+Sr) rich film and for the 6% (Ba+Sr) poor film ranged from 70 to 100 nm and from 30 to 60 nm, respectively. This grain size difference could explain why slightly A-site rich (Ba,Sr)TiO3 films have a larger dielectric constant than A-site poor films.

Dielectric behaviour of erbium substituted Mn–Zn ferrites

Indian Academy of Sciences (India)

Unknown

Abstract. Dielectric properties such as dielectric constant (ε′) and dielectric loss tangent (tan δ) of mixed. Mn–Zn–Er ferrites having the compositional formula Mn0⋅58Zn0⋅37Fe2⋅05–xErxO4 (where x = 0⋅2, 0⋅4, 0⋅6, 0⋅8 and. 1⋅0) were measured at room temperature in the frequency range 1–13 MHz using a HP ...

Method for fabrication of crack-free ceramic dielectric films

Energy Technology Data Exchange (ETDEWEB)

Ma, Beihai; Narayanan, Manoj; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan

2017-12-05

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprises the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. The process provides a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Method for fabrication of crack-free ceramic dielectric films

Science.gov (United States)

Ma, Beihai; Balachandran, Uthamalingam; Chao, Sheng; Liu, Shanshan; Narayanan, Manoj

2014-02-11

The invention provides a process for forming crack-free dielectric films on a substrate. The process comprise the application of a dielectric precursor layer of a thickness from about 0.3 .mu.m to about 1.0 .mu.m to a substrate. The deposition is followed by low temperature heat pretreatment, prepyrolysis, pyrolysis and crystallization step for each layer. The deposition, heat pretreatment, prepyrolysis, pyrolysis and crystallization are repeated until the dielectric film forms an overall thickness of from about 1.5 .mu.m to about 20.0 .mu.m and providing a final crystallization treatment to form a thick dielectric film. Also provided was a thick crack-free dielectric film on a substrate, the dielectric forming a dense thick crack-free dielectric having an overall dielectric thickness of from about 1.5 .mu.m to about 20.0 .mu.m.

Temperature dependence of three-body ion-molecule reactions

International Nuclear Information System (INIS)

Boehringer, H.; Arnold, F.

1983-01-01

The temperature dependence of the ion-molecule association reactions (i) N 2 + + N 2 + M → N 4 + + M (M=N 2 , He), (ii) O 2 + + O 2 + M → O 4 + + M (M=O 2 , He) and (iii) He + + 2He → He 2 + + He have been studied over an extended temperature range to temperatures as low as 30K with a recently constructed liquid helium-cooled ion drift tube. Over most of the temperature range the threebody reaction rate coefficients show an inverse temperature dependence proportional to Tsup(-n) with n in the range 0.6 to 2.9. This temperature dependence is quite consistent with current theories of ion molecule association. At low temperatures, however, a deviation from the Tsup(-n) dependence was observed for the association reactions (ii). For reactions (i) different temperature dependences were obtained for N 2 and He third bodies indicating an additional temperature dependence of the collisional stabilisation process. (Authors)

Temperature dependence of surface nanobubbles

NARCIS (Netherlands)

Berkelaar, R.P.; Seddon, James Richard Thorley; Zandvliet, Henricus J.W.; Lohse, Detlef

2012-01-01

The temperature dependence of nanobubbles was investigated experimentally using atomic force microscopy. By scanning the same area of the surface at temperatures from 51 °C to 25 °C it was possible to track geometrical changes of individual nanobubbles as the temperature was decreased.

Influence of sintering temperature on microstructures and energy-storage properties of barium strontium titanate glass-ceramics prepared by sol-gel process

Energy Technology Data Exchange (ETDEWEB)

Zhu, Jia; Zhang, Yong; Song, Xiaozhen; Zhang, Qian; Yang, Dongliang; Chen, Yongzhou [Beijing Key Laboratory of Fine Ceramics, State Key Laboratory of New Ceramics and Fine Processing, Institute of Nuclear and New Energy Technology, Tsinghua University, Beijing, 100084 (China)

2015-12-15

The sol-gel processing, microstructures, dielectric properties and energy-storage properties of barium strontium titanate glass-ceramics over the sintering temperature range of 1000-1150 C were studied. Through the X-ray diffraction result, it is revealed that the crystallinity increases as the sintering temperature increased from 1000 to 1080 C and has reached a steady-state regime above 1100 C. Scanning electron microscopy images showed that with the increase of sintering temperature, the crystal size increased. Dielectric measurements revealed that the increase in the sintering temperature resulted in a significant increase in the dielectric constant, a strong sharpness of the temperature-dependent dielectric response and a pronounced decrease of the temperature of the dielectric maximum. The correlation between charge spreading behavior and activation energies of crystal and glass was discussed by the employment of the impedance spectroscopy studies. As a result of polarization-electric field hysteresis loops, both the charged and discharged densities increased with increasing sintering temperature. And the maximum value of energy storage efficiency was found to occur at 1130 C. Finally, the dependence of released energy and power densities calculated from the discharged current-time (I-t) curves on the sintering temperature was studied. The relationship between the energy storage properties and microstructure was correlated. Polarization-electric field hysteresis loops for the BST glass-ceramics sintered at different temperatures. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Design and Development of Embedded Based System for the Measurement of Dielectric Constant Spectroscopy for Liquids

Directory of Open Access Journals (Sweden)

V. V. Ramana C. H.

2010-09-01

Full Text Available An embedded based system for the measurement of dielectric constant spectroscopy (for frequencies 1 kHz, 10 kHz, 100 kHz, 1 MHz and 10 MHz for liquids has been designed and developed. It is based on the principle that the change in frequency of an MAX 038 function generator, when the liquid forms the dielectric medium of the dielectric cell, is measured with a microcontroller. Atmel’s AT89LP6440 microcontroller is used in the present study. Further, an LCD module is interfaced with the microcontroller in 4-bit mode, which reduces the hardware complexity. Software is developed in C using Keil’s C-cross compiler. The instrument system covers a wide range of dielectric constants for various liquids at various frequencies and at different temperatures. The system is quite successful in the measurement of dielectric constant in liquids with an accuracy of ± 0.01 %. The dielectric constant is very dependent on the frequency of their measurement. No one-measurement technique is available, however, that will give the frequency range needed to characterize the liquid sample. The paper deals with the hardware and software details.

Defects in codoped NiO with gigantic dielectric response

Science.gov (United States)

Wu, Ping; Ligatchev, Valeri; Yu, Zhi Gen; Zheng, Jianwei; Sullivan, Michael B.; Zeng, Yingzhi

2009-06-01

We combine first-principles, statistical, and phenomenological methods to investigate the electronic and dielectric properties of NiO and clarify the nature of the gigantic dielectric response in codoped NiO. Unlike previous models which are dependent on grain-boundary effects, our model based on small polaron hopping in homogeneous material predicts the dielectric permittivity (104-5) for heavily Li- and MD -codoped NiO (MD=Ti,Al,Si) . Furthermore, we reproduce the experimental trends in dielectric properties as a function of the dopants nature and their concentrations, as well as the reported activation energies for the relaxation in Li- and Ti-codoped NiO (0.308 eV or 0.153 eV depending on the Fermi-level position). In this study, we demonstrate that small polaron hopping on dopant levels is the dominant mechanism for the gigantic dielectric response in these codoped NiO.

Temperature dependency in motor skill learning.

Science.gov (United States)

Immink, Maarten A; Wright, David L; Barnes, William S

2012-01-01

The present study investigated the role of temperature as a contextual condition for motor skill learning. Precision grip task training occurred while forearm cutaneous temperature was either heated (40-45 °C) or cooled (10-15 °C). At test, temperature was either reinstated or changed. Performance was comparable between training conditions while at test, temperature changes decreased accuracy, especially after hot training conditions. After cold training, temperature change deficits were only evident when concurrent force feedback was presented. These findings are the first evidence of localized temperature dependency in motor skill learning in humans. Results are not entirely accounted for by a context-dependent memory explanation and appear to represent an interaction of neuromuscular and sensory processes with the temperature present during training and test.

Mechanistic study of plasma damage to porous low-k: Process development and dielectric recovery

Science.gov (United States)

Shi, Hualiang

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k interconnect. However, during the O2 plasma ashing process, the porous low-k dielectrics tend to degrade due to methyl depletion, moisture uptake, and densification, increasing the dielectric constant and leakage current. This dissertation presents a study of the mechanisms of plasma damage and dielectric recovery. The kinetics of plasma interaction with low-k dielectrics was investigated both experimentally and theoretically. By using a gap structure, the roles of ion, photon, and radical in producing damage on low-k dielectrics were differentiated. Oxidative plasma induced damage was proportional to the oxygen radical density, enhanced by VUV photon, and increased with substrate temperature. Ion bombardment induced surface densification, blocking radical diffusion. Two analytical models were derived to quantify the plasma damage. Based on the radical diffusion, reaction, and recombination inside porous low-k dielectrics, a plasma altered layer model was derived to interpret the chemical effect in the low ion energy region. It predicted that oxidative plasma induced damage can be reduced by decreasing pore radius, substrate temperature, and oxygen radical density and increasing carbon concentration and surface recombination rate inside low-k dielectrics. The model validity was verified by experiments and Monte-Carlo simulations. This model was also extended to the patterned low-k structure. Based on the ion collision cascade process, a sputtering yield model was introduced to interpret the physical effect in the high ion energy region. The model validity was verified by checking the ion angular and energy dependences of sputtering yield using O2/He/Ar plasma, low-k dielectrics with different k values, and a Faraday cage. Low-k dielectrics and plasma process were optimized to reduce plasma damage, including increasing carbon concentration in low-k dielectrics, switching plasma

Structural and dielectric properties of Gd doped bismuth ferrite-lead titanate

International Nuclear Information System (INIS)

Mohanty, N. K.; Behera, A. K.; Satpathy, S. K.; Behera, B.; Nayak, P.

2014-01-01

0.5BiGd x Fe 1−x O 3 −0.5PbTiO 3 with x=0.05, 0.10, 0.15, 0.20 composite was prepared by mixed oxide method. Structural characterization was performed by X-ray diffraction and studied that the materials show tetragonal structure at room temperature for all concentration of Gd. Studies of dielectric properties (ε r and tanδ) of the above compound at different frequencies in a wide range of temperature (25°-500°C) with an impedance analyser revealed that the dielectric constant increases with increase in Gd concentration as well temperature and the compound do not have any dielectric anomaly in the studied frequency and temperature range

Magnetic and dielectric properties of the ruthenium double perovskites La2MRuO6 (M=Mg, Co, Ni, and Zn)

International Nuclear Information System (INIS)

Yoshii, Kenji; Ikeda, Naoshi; Mizumaki, Masaichiro

2006-01-01

Magnetic and dielectric properties of the ruthenium double perovskites La 2 MRuO 6 (M=Mg, Co, Ni, and Zn) were investigated. The magnetization measurements for M=Co and Ni showed the existence of magnetic order at 20-30 K. Though the oxides with M=Zn and Mg exhibit a deviation from the Curie-Weiss law, magnetic order was not clearly observed. The result of La 2 ZnRuO 6 was different from that previously reported, in which a ferromagnetic transition was found at around 165 K. The AC dielectric measurements for M = Co and Ni showed large dielectric constants (typically larger than 1000) at around room temperature, suggesting both the formation of short-ranged polar regions and the magnetic origin of large dielectric constant. In addition, two peaks were found for the temperature dependence of the tan δ component for La 2 NiRuO 6 . The behavior suggests the existence of two different polar regions. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

Dielectric and Carrier Transport Properties of Silicone Rubber Degraded by Gamma Irradiation

Directory of Open Access Journals (Sweden)

Daomin Min

2017-10-01

Full Text Available Silicone rubber (SiR is used as an insulating material for cables installed in a nuclear power plant. Gamma rays irradiated SiR sheets for various periods at temperatures of 145 and 185 °C, and the resultant changes were analyzed by examining complex permittivity spectra and surface potential decay characteristics. Three different processes, namely, instantaneous polarization, electrode polarization due to the accumulation of ions to form double charge layers at dielectric/electrode interfaces, and DC conduction caused by directional hopping of ions, contribute to the complex permittivity. By fitting the spectra to theoretical equations, we can obtain the dielectric constant at high frequencies, concentration and diffusion coefficient of ions and DC conductivity for the pristine and degraded samples. The instantaneous polarization becomes active with an increase of dose and ageing temperature. The thermal expansion coefficient estimated from the temperature dependence of dielectric constant at high frequencies becomes smaller with an increase in dose, which is in good agreement with the experimental results of the swelling ratio. Additionally, trap distributions are calculated from surface potential decay measurements and analyzed to explain the variation in conductivity. Trap energy increases firstly, and then decreases with an increase in dose, leading to a similar change in DC conductivity. It is concluded that generations of both oxidative products and mobile ions, as well as the occurrence of chain scission and crosslinking are simultaneously induced by gamma rays.

A room temperature cured low dielectric hyperbranched epoxy ...

Indian Academy of Sciences (India)

carbon chain in its structure.2 In the present study, a .... The degree of branching, epoxy equivalent and hydroxyl value ... The physical properties and swelling value of the hardener were ... samples were studied by thermogravimetric analysis. (TGA) in ..... Nalwa H S 1999 Handbook of low and high dielectric constant ...

Study of electrical properties of Sc doped BaFe12O19 ceramic using dielectric, impedance, modulus spectroscopy and AC conductivity

Science.gov (United States)

Gupta, Surbhi; Deshpande, S. K.; Sathe, V. G.; Siruguri, V.

2018-04-01

We present dielectric, complex impedance, modulus spectroscopy and AC conductivity studies of the compound BaFe10Sc2O19 as a function of temperature and frequency to understand the conduction mechanism. The variation in complex dielectric constant with frequency and temperature were analyzed on the basis of Maxwell-Wagner-Koop's theory and charge hopping between ferrous and ferric ions. The complex impedance spectroscopy study shows only grain contribution whereas complex modulus plot shows two semicircular arcs which indicate both grain and grain boundary contributions in conduction mechanism. AC conductivity has also been evaluated which follows the Jonscher's law. The activation energy calculated from temperature dependence of DC conductivity comes out to be Ea˜ 0.31eV.

Measurement of the Dielectric Constant of Seawater at L-Band: Techniques and Measurements

Science.gov (United States)

Lang, R.; Utku, C.; Tarkocin, Y.; LeVine, D.

2009-01-01

Satellite instruments, that will monitor salinity from space in the near future, require an accurate relationship between salinity/temperature and seawater dielectric constant. This paper will review measurements that were made of the dielectric constant of seawater during the past several years. The objective of the measurements is to determine the dependence of the dielectric constant of seawater on salinity and on temperature, more accurately than in the past. by taking advantage of modem instrumentation. The measurements of seawater permittivity have been performed as a function of salinity and temperature using a transmission resonant cavity technique. The measurements have been made in the salinity range of 10 to 38 psu and in the temperature range of IOU C to 35 C. These results will be useful in algorithm development for sensor systems such as SMOS and Aquarius. The measurement system consists of a brass microwave cavity that is resonant at 1.413 GHz. The seawater is introduced into the cavity through a capillary glass tube having an inner diameter of 0.1 mm. The diameter of the tube has been made very small so that the amount of seawater introduced in the cavity is small - thus maintaining the sensitivity of the measurements and allowing the use of perturbation theory predicting the seawater permittivity. The change in resonant frequency and the change in cavity Q can be used to determine the real and imaginary pare of the dielectric constant of seawater introduced into the slender tube. The microwave measurements are made by an HPS722D network analyzer. The cavity has been immersed in a uateriethylene-glycol bath which is connected to a Lauda circulator. The circulator keeps the brass cavity at a temperature constant to within 0.01 degrees. The system is automated using a Visual Basic program to control the analyzer and to collect the data. The results of the dielectric constant measurements of seawater will be presented. The measurement results will be

Enhancement in dielectric behavior of (Ni, Zn)Fe{sub 2}O{sub 4} ferrite

Energy Technology Data Exchange (ETDEWEB)

Sheikh, Javed R.; Gaikwad, Vishwajit M.; Moon, Vaibhav C.; Acharya, Smita A., E-mail: saha275@yahoo.com [Advanced Materials Laboratory, Department of Physics, Rashtrasant Tukadoji Maharaj Nagpur University Campus, Nagpur-440033 (India)

2016-05-06

In present work, NiFe{sub 2}O{sub 4}(NFO), ZnFe{sub 2}O{sub 4} (ZFO) and Ni{sub 0.5}Zn{sub 0.5}Fe{sub 2}O{sub 4} (NZFO) are synthesized by microwave assisted co-precipitation route. Their structural properties are confirmed by X-ray diffraction and data is fitted through Reitveld refinement using Full-Prof software suite. After refinement, the systematic crystal structures of NFO, ZFO and NZFO compounds are generated using output .cif file by VESTA (Visualization for Electronic and Structural Analysis) program. Structural parameters obtained after refinement and unit cell construction, are systematically tabulated. Room temperature frequency dependence dielectric properties are studied. We found enhanced values of dielectric constant for NZFO than individual NFO and ZFO phases. For NZFO sample, greater electron exchange between Fe{sup 2+} and Fe{sup 3+} which enhances polarization and dielectric constant.

Pyroelectric and dielectric energy conversion – A new view of the old problem

International Nuclear Information System (INIS)

Poprawski, W.; Gnutek, Z.; Radojewski, J.; Poprawski, R.

2015-01-01

The pyroelectric effect is commonly used to construct infrared radiation detectors. In this article we intend to pay attention to a possibility of the pyroelectric effect employment along with the temperature dependence of the dielectric permittivity into a direct conversion of the time-alternating heat flux and the electromagnetic radiation to the electric energy. Converters making use of the mentioned phenomena can be applied in the low-power electric energy generators mounted in autonomous electronic devices. Operation principles for pyroelectric and dielectric generators (PEG and DEG) of the electric energy are presented in this work together with a brief review on ferro- and antiferroelectric materials suitable for the generators. It was shown that for the ferroelectrics with the second-order phase transition the conversion efficiency of PEGs did not depend on temperature in a wide temperature range, and ferroelectrics showing an order–disorder phase transition together with composites and heterostructures based on these ferroelectrics had high conversion efficiency. For the first time ferro- and antiferroelectric materials were extensively reviewed with regard to their applicability in PEGs. It was also shown that ferro- and antiferroelectrics with translation-type phase transition, quantum ferroelectrics, ferro- and antiferroelectric relaxors were good materials for DEGs. Considering literature data the efficiency for the thermal-to-electrical energy conversion was estimated for a few typical material groups. Advantages and disadvantages of the individual groups were presented along with their possible limitations for PEG and DEG usage. - Highlights: • A direct conversion of the alternating heat flux to the electric energy is described. • Order–disorder-type ferroelectrics were found to be suitable for pyroelectric energy generators. • Certain ferro- and antiferroelectrics, quantum ones and relaxors were good for dielectric converters. • The

Effect of organo clay on curing, mechanical and dielectric properties of NR/SBR blends

Science.gov (United States)

Ravikumar, K.; Joseph, Reji; Ravichandran, K.

2018-04-01

Natural rubber (NR) and styrene butadiene rubber (SBR) based elastomeric blends reinforced with organically modified Sodium bentonite clay were prepared by two roll mills. Vulcanization parameters such as minimum and maximum torque values scorch and cure times are measured by Oscillating Disc Rheometer. Mechanical properties such as Tensile strength, modulus at 100%, 200% and 300% elongation and elongation at break and Hardness were measured by Universal testing machine and Durometer Shore A hardness meter respectively. Dielectric properties such as dielectric constant (ε’), dissipation factor (tanδ) and volume resistivity (ρv) were measured at room temperature. The curing studies show that torque values are increasing in NR/SBR blends by increase NR content. The scorch and optimum cure time in NR/SBR blends reinforced organo modified clay was found through increase in the SBR content. This may be due to better processing safety of the NR/SBR blends reinforced with organo modified clay. Mechanical properties show that addition of SBR in blends, tensile strength, elongation modulus increases, but 100% modulus slightly increases and no change was observed in Hardness. Dielectric studies show that dielectric constant of NR and SBR rubbers are almost same, it may due to their non-polar nature. But addition of SBR in NR/SBR blend, dielectric constant gradually increases and maximum value observed at 50/50 ratio. But no considerable change was observed in dissipation factor. Frequency dependant resistivity shows that volume resistivity was not changed with respect to frequency up to 3.5 kHz and beyond that the frequency dependence resistivity was found.

Enhanced dielectric and electrical properties of annealed PVDF thin film

Science.gov (United States)

Arshad, A. N.; Rozana, M. D.; Wahid, M. H. M.; Mahmood, M. K. A.; Sarip, M. N.; Habibah, Z.; Rusop, M.

2018-05-01

Poly (vinylideneflouride) (PVDF) thin films were annealed at various annealing temperatures ranging from 70°C to 170°C. This study demonstrates that PVDF thin films annealed at temperature of 70°C (AN70) showed significant enhancement in their dielectric constant (14) at frequency of 1 kHz in comparison to un-annealed PVDF (UN-PVDF), dielectric constant (10) at the same measured frequency. As the annealing temperature was increased from 90°C (AN90) to 150°C (AN150), the dielectric constant value of PVDF thin films was observed to decrease gradually to 11. AN70 also revealed low tangent loss (tan δ) value at similar frequency. With respect to its resistivity properties, the values were found to increase from 1.98×104 Ω.cm to 3.24×104 Ω.cm for AN70 and UN-PVDF films respectively. The improved in dielectric constant, with low tangent loss and high resistivity value suggests that 70°C is the favorable annealing temperature for PVDF thin films. Hence, AN70 is a promising film to be utilized for application in electronic devices such as low frequency capacitor.

Ozone Production Using Pulsed Dielectric Barrier Discharge in Oxygen

OpenAIRE

Samaranayake, W. J. M.; Miyahara, Y.; Namihira, T.; Katsuki, S.; Hackam, R.; Akiyama, H.; ナミヒラ, タカオ; カツキ, スナオ; アキヤマ, ヒデノリ; 浪平, 隆男; 勝木, 淳; 秋山, 秀典

2000-01-01

The production of ozone was investigated using a dielectric barrier discharge in oxygen, and employing short-duration pulsed power. The dependence of the ozone concentration (parts per million, ppm) and ozone production yield (g(O3)/kWh) on the peak pulsed voltage (17.5 to 57.9 kV) and the pulse repetition rate (25 to 400 pulses/s, pps) were investigated. In the present study, the following parameters were kept constant: a pressure of 1.01×105 Pa, a temperature of 26±4°C a gas flow rate of 3....

Effect of gate dielectrics on the performance of p-type Cu2O TFTs processed at room temperature

KAUST Repository

Al-Jawhari, Hala A.

2013-12-01

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling -0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of -2V. The advantages of using STO as a gate dielectric relative to ATO are discussed. © (2014) Trans Tech Publications, Switzerland.

Accurate Measurements of the Dielectric Constant of Seawater at L Band

Science.gov (United States)

Lang, Roger; Zhou, Yiwen; Utku, Cuneyt; Le Vine, David

2016-01-01

This paper describes measurements of the dielectric constant of seawater at a frequency of 1.413 GHz, the center of the protected band (i.e., passive use only) used in the measurement of sea surface salinity from space. The objective of the measurements is to accurately determine the complex dielectric constant of seawater as a function of salinity and temperature. A resonant cylindrical microwave cavity in transmission mode has been employed to make the measurements. The measurements are made using standard seawater at salinities of 30, 33, 35, and 38 practical salinity units over a range of temperatures from 0 degree C to 35 degree C in 5 degree C intervals. Repeated measurements have been made at each temperature and salinity. Mean values and standard deviations are then computed. The total error budget indicates that the real and imaginary parts of the dielectric constant have a combined standard uncertainty of about 0.3 over the range of salinities and temperatures considered. The measurements are compared with the dielectric constants obtained from the model functions of Klein and Swift and those of Meissner and Wentz. The biggest differences occur at low and high temperatures.

An Engineering Tool for the Prediction of Internal Dielectric Charging

Science.gov (United States)

Rodgers, D. J.; Ryden, K. A.; Wrenn, G. L.; Latham, P. M.; Sorensen, J.; Levy, L.

1998-11-01

A practical internal charging tool has been developed. It provides an easy-to-use means for satellite engineers to predict whether on-board dielectrics are vulnerable to electrostatic discharge in the outer radiation belt. The tool is designed to simulate irradiation of single-dielectric planar or cylindrical structures with or without shielding. Analytical equations are used to describe current deposition in the dielectric. This is fast and gives charging currents to sufficient accuracy given the uncertainties in other aspects of the problem - particularly material characteristics. Time-dependent internal electric fields are calculated, taking into account the effect on conductivity of electric field, dose rate and temperature. A worst-case model of electron fluxes in the outer belt has been created specifically for the internal charging problem and is built into the code. For output, the tool gives a YES or NO decision on the susceptibility of the structure to internal electrostatic breakdown and if necessary, calculates the required changes to bring the system below the breakdown threshold. A complementary programme of laboratory irradiations has been carried out to validate the tool. The results for Epoxy-fibreglass samples show that the code models electric field realistically for a wide variety of shields, dielectric thicknesses and electron spectra. Results for Teflon samples indicate that some further experimentation is required and the radiation-induced conductivity aspects of the code have not been validated.

Single crystal magnetic, dielectric and thermal studies of the relaxor ferroelectric Pb(Fe2/3W1/3)O3

International Nuclear Information System (INIS)

Ye, Z.G.; Sato, M.; Kita, E.; Bursill, L.A.; Schmid, H.

1998-01-01

The magnetic, dielectric and thermal properties of the complex perovskite Pb(Fe 2/3 W 1/3 )O 3 [PFW] have been studied on single crystals by means of a SQUID magnetometer, dielectric measurements and thermal analysis. Anomalies in the temperature dependence of the magnetization have revealed magnetic phase transitions at T N1 =350 K and T N2 =20 K. These two steps of antiferromagnetic ordering are attributed to the microstructural feature of the complex perovskite, characterized by ordered and disordered arrangements on the B-site, giving rise to a strong superexchange interaction of - Fe 3 + - O - Fe 3+ - type with a higher ordering temperature, and to a weak superexchange interaction of the B-site ordered elpasolite type - Fe 3+ + - O - W - O - Fe 3+ - with a lower Neel temperature. The low temperature antiferromagnetic phase exhibits a weak ferromagnetism. The dielectric properties of PFW show a relaxor ferroelectric behaviour with a dispersive maximum of permittivity at Tm (170 -190 K). The magnetic phase transition at T N2 =20 K results in anomalies both of the real part of permittivity and the dissipation factor, suggesting a magneto-electric coupling via magneto-structural interactions

Dielectric properties of lead orthovanadate and orthophosphate and some solid solutions on theirs basis

International Nuclear Information System (INIS)

Dudnik, E.F.; Sinyakov, E.V.; Gene, V.V.

1977-01-01

The dielectric properties of the monocrystals of the ferroelastics Pb 3 (PO 4 ) 2 and Pb 3 (VO 4 ) 2 were investigated. The dependencies of dielectric permeability and double refraction upon temperature were measured. The domain structure and the effect of pressure upon it were studied. The influence of BaO, CaO and Cr 2 O 3 additions upon the properties of Pb 3 (V 4 ) 2 monocrystals and upon the system of monocrystalline solid solutions of Pb 3 (VO 4 ) 2 - Pb 3 (PO 4 ) 2 was also examined. Similar to the case of usual segnetoelectrics, introduction of additions into segnetoelastic crystals was found to lead to spreading of the phase transition

Dielectric properties of semi-insulating Fe-doped InP in the terahertz spectral region.

Science.gov (United States)

Alyabyeva, L N; Zhukova, E S; Belkin, M A; Gorshunov, B P

2017-08-04

We report the values and the spectral dependence of the real and imaginary parts of the dielectric permittivity of semi-insulating Fe-doped InP crystalline wafers in the 2-700 cm -1 (0.06-21 THz) spectral region at room temperature. The data shows a number of absorption bands that are assigned to one- and two-phonon and impurity-related absorption processes. Unlike the previous studies of undoped or low-doped InP material, our data unveil the dielectric properties of InP that are not screened by strong free-carrier absorption and will be useful for designing a wide variety of InP-based electronic and photonic devices operating in the terahertz spectral range.

Influence of Al3+ substitution on the electrical resistivity and dielectric behavior of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites synthesized by solid state reaction technique

Science.gov (United States)

Rahman, K. R.; Chowdhury, F.-U.-Z.; Khan, M. N. I.

2017-12-01

In this paper, the effect of Al3+ substitution on the electrical and dielectric properties of Ni0.25Cu0.20Zn0.55AlxFe2-xO4 ferrites with x = 0.0, 0.05. 0.10, 0.15 and 0.20, synthesized by solid state reaction has been reported. Using two probe method, the DC resistivity has been investigated in the temperature range from 30 °C to 300 °C. Activation energy was calculated from the Arrhenius plot. The electrical conduction is explained on the basis of the hopping mechanism. The frequency dependent dielectric properties of these spinel ferrites have been studied at room temperature by measuring AC resistivity, conductivity (σac), dielectric constant and dielectric loss tangent (tan δ) in the frequency range between 1 kHz and 120 MHz. The study of dielectric properties showed that the dielectric constant and dielectric loss increased with increasing non-magnetic Al ions. The dependence of dielectric constant with frequency has been explained by Maxwell-Wagner interfacial polarization. Cole-Cole plots show semicircular arc(s) for the samples, and equivalent RC circuits have been proposed to clarify the phenomena involved therein. The analysis of complex impedance spectroscopy has been used to distinguish between the grain and grain boundary contribution to the total resistance.

Completeness relations for the electromagnetic modes of a cylindrical fibre with a radially dependent dielectric and magnetic permittivity and conductivity

NARCIS (Netherlands)

Hoenders, B.J.

1986-01-01

We consider an infinitely long conducting cylinder whose dielectric and magnetic permittivity and conductivity are functions of the distance from a point inside the cylinder to its axis. It is shown that the r-dependent part of the set of electromagnetic modes associated with such a cylinder is

New Dielectric Measurement Data to Determine the Permittivity of Seawater at 1.4313 Hz

Science.gov (United States)

Lang, R.; Zhou, Y.; Utku, C.; Levine, D.

2012-01-01

This paper describes the new measurements - made in 2010-2011 - of the dielectric constant of seawater at 1.413 GHz using a resonant cavity technique. The purpose of these measurements is to develop an accurate relationship concerning the dependence of the dielectric constant of seawater on temperature and salinity for use by the Aquarius inversion algorithm. Aquarius is a NASA/CONAE satellite mission launched in June of 2011 with the primary mission of measuring global sea surface salinity with a 1.413 GHz radiometer to an accuracy of 0.2 psu. A brass microwave cavity resonant at 1.413 GHz has been used to measure the dielectric constant of seawater. The seawater is introduced into the cavity through a capillary glass tube having an inner diameter of 0.1 mm. The change of resonant frequency and the cavity Q value are used to determine the real and imaginary parts of the dielectric constant of seawater. Measurements are automated with Visual Basic software developed at the George Washington University. In this paper, new results from measurements made since September 2010 will be presented for salinities of 30, 35 and 38 psu with a temperature range of 0 C to 35 C in intervals of 5 C. These measurements are more accurate than earlier measurements made in 2008. The new results will be compared to the Klein-Swift (KS) and Meissner-Wentz (MW) model functions. The importance of an accurate model function will be illustrated by using these model functions to invert the Aquarius brightness temperature to retrieve the salinity values. The salinity values will be compared to co-located in situ data collected by Argo buoys.

Surface electric resistance of YBa2Cu3O7-δ ceramics and its dependence on magnetic field

International Nuclear Information System (INIS)

Gorochev, O.A.; Graboj, I.Eh.; Kaul', A.R.; Mitrofanov, V.P.

1989-01-01

Method of dielectric resonator in the 4.2-300 K temperature range is used to measure surface electric resistance of YBa 2 Cu 3 O 7-δ ceramics samples produced by different technologies. The temperature dependence of surface resistance near transition temperature is calculated. At 77.3 K dependence of electric resistance on external magnetic field at H≤200Oe is determined. Calculated dependence is verified in experiment

Dielectric properties of almond kernels associated with radio frequency and microwave pasteurization

Science.gov (United States)

Li, Rui; Zhang, Shuang; Kou, Xiaoxi; Ling, Bo; Wang, Shaojin

2017-02-01

To develop advanced pasteurization treatments based on radio frequency (RF) or microwave (MW) energy, dielectric properties of almond kernels were measured by using an open-ended coaxial-line probe and impedance analyzer at frequencies between 10 and 3000 MHz, moisture contents between 4.2% to 19.6% w.b. and temperatures between 20 and 90 °C. The results showed that both dielectric constant and loss factor of the almond kernels decreased sharply with increasing frequency over the RF range (10-300 MHz), but gradually over the measured MW range (300-3000 MHz). Both dielectric constant and loss factor of almond kernels increased with increasing temperature and moisture content, and largely enhanced at higher temperature and moisture levels. Quadratic polynomial equations were developed to best fit the relationship between dielectric constant or loss factor at 27, 40, 915 or 2450 MHz and sample temperature/moisture content with R2 greater than 0.967. Penetration depth of electromagnetic wave into samples decreased with increasing frequency (27-2450 MHz), moisture content (4.2-19.6% w.b.) and temperature (20-90 °C). The temperature profiles of RF heated almond kernels under three moisture levels were made using experiment and computer simulation based on measured dielectric properties. Based on the result of this study, RF treatment has potential to be practically used for pasteurization of almond kernels with acceptable heating uniformity.

Influence of domain on grain size effects of the dielectric properties of BaTiO3 nanoceramics and nanoparticles

International Nuclear Information System (INIS)

Fang Chao; Chen Liangyan; Zhou Dongxiang

2013-01-01

The dielectric property of BaTiO 3 nanoparticles and nanoceramics has been studied on the basis of Ginsburg-Landau-Devonshire thermodynamic theory. In this paper, considering nanodomains, Landau coefficients have been written as a function of grain size, and the dielectric constant of the material has been calculated at a variety of temperatures and grain size. The results indicate that with decreasing grain size, the dielectric peak decreases. The two lower dielectric peaks of the orthorhombic-rhombohedral phase and tetragonal-orthorhombic phase move to higher temperature, while cubic-tetragonal phase dielectric peak moves to lower temperature. The dielectric constant of BaTiO 3 ceramics decreases with decreasing grain size. The dielectric constant peak at room temperature is at the grain size which is larger than the critical grain size 17-30 nm. The calculated result is consistent with the experimental data.

The Electrical Breakdown of Thin Dielectric Elastomers

DEFF Research Database (Denmark)

Zakaria, Shamsul Bin; Morshuis, Peter H. F.; Yahia, Benslimane Mohamed

2014-01-01

Dielectric elastomers are being developed for use in actuators, sensors and generators to be used in various applications, such as artificial eye lids, pressure sensors and human motion energy generators. In order to obtain maximum efficiency, the devices are operated at high electrical fields....... This increases the likelihood for electrical breakdown significantly. Hence, for many applications the performance of the dielectric elastomers is limited by this risk of failure, which is triggered by several factors. Amongst others thermal effects may strongly influence the electrical breakdown strength....... In this study, we model the electrothermal breakdown in thin PDMS based dielectric elastomers in order to evaluate the thermal mechanisms behind the electrical failures. The objective is to predict the operation range of PDMS based dielectric elastomers with respect to the temperature at given electric field...

Molecular dynamics of amorphous pharmaceutical fenofibrate studied by broadband dielectric spectroscopy

Directory of Open Access Journals (Sweden)

U. Sailaja

2016-06-01

Full Text Available Fenofibrate is mainly used to reduce cholesterol level in patients at risk of cardiovascular disease. Thermal transition study with the help of differential scanning calorimetry (DSC shows that the aforesaid active pharmaceutical ingredient (API is a good glass former. Based on our DSC study, the molecular dynamics of this API has been carried out by broadband dielectric spectroscopy (BDS covering wide temperature and frequency ranges. Dielectric measurements of amorphous fenofibrate were performed after its vitrification by fast cooling from a few degrees above the melting point (Tm=354.11 K to deep glassy state. The sample does not show any crystallization tendency during cooling and reaches the glassy state. The temperature dependence of the structural relaxation has been fitted by single Vogel–Fulcher–Tamman (VFT equation. From VFT fit, glass transition temperature (Tg was estimated as 250.56 K and fragility (m was determined as 94.02. This drug is classified as a fragile glass former. Deviations of experimental data from Kohlrausch–Williams–Watts (KWW fits on high-frequency flank of α-peak indicate the presence of an excess wing in fenofibrate. Based on Ngai׳s coupling model, we identified the excess wing as true Johari–Goldstein (JG process. Below the glass transition temperature one can clearly see a secondary relaxation (γ with an activation energy of 32.67 kJ/mol.

Electrical and dielectric investigation of intercalated polypyrrole montmorillonite nanocomposite prepared by spontaneous polymerization of pyrrole into Fe(III)-montmorillonite

Energy Technology Data Exchange (ETDEWEB)

Zidi, Rabii, E-mail: rabiizidi@gmail.com [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Bekri-Abbes, Imene; Sdiri, Nasr [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia); Vimalanandan, Ashokanand; Rohwerder, Michael [Max-Planck-Institut für Eisenforschung GmbH, Düsseldorf (Germany); Srasra, Ezzeddine [Physical Chemistry Laboratory for Mineral Materials and their Applications, National Center for Research in Materials Sciences (CNRSM), B.P.73, 8020 Soliman (Tunisia)

2016-10-15

Highlights: • We have prepared and characterized a Fe-MMT/PPy nanocomposites. • Investigate electrical conductivity and dielectric properties of the nanocomposite. • Investigate the temperature and frequency dependencies of alternating current conductivity of nanocomposites. - Abstract: Pyrrole was introduced into Fe(III)-exchanged montmorillonite to spontaneously polymerize within the interlayer resulting in the formation of intercalated polypyrrole-montmorillonite nanocomposite. The molar proportion of pyrrole to interlayer Fe{sup 3+} (R) has been varied from 0.5 to 5. The nanocomposite has been characterized by X-ray diffraction, Scanning Electronic Microscope, FTIR spectroscopy and impedance spectroscopy. It has been shown that intercalated polypyrrole montmorillonite nanocomposite was obtained. The results showed that the dc conductivity and dielectric properties of polypyrrole depend on R. The alternating current (ac) conductivity of the polymer obeys the power law, i.e., σ{sub ac}(ω) = Aω{sup s}. The alternating conductivity of nanocomposite was controlled by the correlated barrier hopping model. The activation energy for alternating current mechanism decreases with increasing frequency which confirms the hopping conduction to the dominant mechanism as compared with the dc activation energy. The dielectric relaxation mechanism was explained on the basis of complex dielectric modulus.

Dielectric and mechanical relaxation in isooctylcyanobiphenyl (8*OCB)

Energy Technology Data Exchange (ETDEWEB)

Pawlus, S; Mierzwa, M; Paluch, M; Rzoska, S J [Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice (Poland); Roland, C M, E-mail: michal.mierzwa@us.edu.p [Chemistry Division, Naval Research Laboratory, Code 6120, Washington, DC 20375-5342 (United States)

2010-06-16

The dynamics of isooctylcyanobiphenyl (8*OCB) was characterized using dielectric and mechanical spectroscopies. This isomer of the liquid crystalline octylcyanobiphenyl (8OCB) vitrifies during cooling or on application of pressure, exhibiting the typical features of glass-forming liquids: non-Debye relaxation function, non-Arrhenius temperature dependence of the relaxation times, {tau}{sub {alpha}}, a dynamic crossover at T {approx} 1.6T{sub g}. This crossover is evidenced by changes in the behavior of both the peak shape and the temperature dependence of {tau}{sub {alpha}}. The primary relaxation time at the crossover, 2 ns at ambient pressure, is the smallest value reported to date for any molecular liquid or polymer. Interestingly, at all temperatures below this crossover, {tau}{sub {alpha}}and the dc conductivity remain coupled (i.e., conform to the Debye-Stokes-Einstein relation). Two secondary relaxations are observed in the glassy state, one of which is identified as the Johari-Goldstein process. Unlike the case for 8OCB, no liquid crystalline phase could be attained for 8*OCB, demonstrating that relatively small differences in chemical structure can effect substantial changes in the intermolecular potential.

Effect of organo-clay on the dielectric relaxation response of silicone rubber

International Nuclear Information System (INIS)

Gharavi, N; Razzaghi-Kashani, M; Golshan-Ebrahimi, N

2010-01-01

Dielectric elastomers are light weight, low-cost, highly deformable and fast response smart materials capable of converting electrical energy into mechanical work or vice versa. Silicone rubber is a well-known dielectric elastomer which is used as actuator, and in order to enhance the efficiency of this smart material, compounding of silicone rubber with various fillers can be carried out. The effect of organically modified montmorillonite (OMMT) nano-clay on improvement of dielectric properties, actuation stress and its relaxation response was considered in this study. OMMT was dispersed in room temperature vulcanized (RTV) silicone rubber, and a composite film was cast. Using an in-house actuation set-up, it was shown that the actuation stress for a given electric field intensity is higher for composites than that for pristine silicone rubber. Also, the time-dependent actuation response of the samples was evaluated, and it was shown that the characteristic relaxation time of the actuation stress for composites is less than for the pristine rubber as a result of OMMT addition

Dielectric spectroscopy of PMMA-LiClO4 based polymer electrolyte plasticized with ethylene carbonate EC

Science.gov (United States)

Pal, P.; Ghosh, A.

2018-04-01

Dielectric spectroscopy covering the frequency range 0.01 Hz - 2 MHz for PMMA-LiClO4 based polymer electrolyte embedded with different concentration of ethylene carbonate (x = 0, 20 and 40 wt%) has been analyzed using Havrilliak-Negami formalism. The reciprocal temperature dependence of inverse relaxation time obtained from the analysis of dielectric spectra follows Vogel-Tammann-Fulcher behaviour. The shape parameters obtained from this analysis change with ethylene carbonate concentrations. From the fits of the experimental result using Kohlrausch-Williams-Watts function. We have obtained stretched exponent β which indicates that the relaxation is highly non-exponential. The decay function obtained from electric modulus data is highly asymmetric.

Hydrodynamical flows in dielectric liquid in strong inhomogeneous pulsed electric field

International Nuclear Information System (INIS)

Tereshonok, Dmitry V; Babaeva, Natalia Yu; Naidis, George V; Smirnov, Boris M

2016-01-01

We consider a hydrodynamical flow of dielectric liquid near a high voltage needle-shaped electrode in a strong inhomogeneous pulsed electric field. It was shown that under a small rise time, a negative pressure area (pressure is less than critical pressure) appears near the electrode leading to the formation of a cavity in which electric breakdown can develop. A comparison of the dependence of the velocity of fluid near an electrode for two cases (taking into account the dependence of dielectric permeability of the liquid on the electric field and without taking it into account) was made. A field-dependent dielectric coefficient leads to the appearance of two local maximums of the velocities and increases the minimum pressure, thus lowering the possibility of cavitation. While under the constant value of dielectric permeability only one local maximum appears. (paper)

Numerical and experimental investigation of dielectric recovery in supercritical N2

International Nuclear Information System (INIS)

Zhang, J; Van Heesch, E J M; Markosyan, A H; Ebert, U; Seeger, M; Van Veldhuizen, E M

2015-01-01

A supercritical (SC) nitrogen (N 2 ) switch is designed and tested. The dielectric strength and recovery rate of the SC switch are investigated by experiments. In order to theoretically study the discharge and recovery process of the SC N 2 switch under high repetition rate operation, a numerical model is developed. For SC N 2 with initial parameters of p = 80.9 bar and T = 300 K, the simulation results show that within several nanoseconds after the streamer bridges the switch gap, the spark is fully developed and this time depends on the applied electric field between electrodes. During the whole discharge process, the maximum temperature in the channel is about 20 000 K. About 10 µs after the spark excitation of 200 ns duration, the temperature on the axis decays to T axis  ⩽ 1500 K, mainly contributed by the gas expansion and heat transfer mechanisms. After 100 µs, the dielectric strength of the gap recovers to above half of the cold breakdown voltage due to the temperature decay in the channel. Both experimental and numerical investigations indicate that supercritical fluid is a good insulating medium that has a proved high breakdown voltage and fast recovery speed. (paper)

AC conductivity and dielectric properties of bulk tungsten trioxide (WO3)

Science.gov (United States)

El-Nahass, M. M.; Ali, H. A. M.; Saadeldin, M.; Zaghllol, M.

2012-11-01

AC conductivity and dielectric properties of tungsten trioxide (WO3) in a pellet form were studied in the frequency range from 42 Hz to 5 MHz with a variation of temperature in the range from 303 K to 463 K. AC conductivity, σac(ω) was found to be a function of ωs where ω is the angular frequency and s is the frequency exponent. The values of s were found to be less than unity and decrease with increasing temperature, which supports the correlated barrier hopping mechanism (CBH) as the dominant mechanism for the conduction in WO3. The dielectric constant (ε‧) and dielectric loss (ε″) were measured. The Cole-Cole diagram determined complex impedance for different temperatures.

Excitations and relaxation dynamics in multiferroic GeV4S8 studied by terahertz and dielectric spectroscopy

Science.gov (United States)

Reschke, S.; Wang, Zhe; Mayr, F.; Ruff, E.; Lunkenheimer, P.; Tsurkan, V.; Loidl, A.

2017-10-01

We report on THz time-domain spectroscopy on multiferroic GeV4S8 , which undergoes orbital ordering at a Jahn-Teller transition at 30.5 K and exhibits antiferromagnetic order below 14.6 K. The THz experiments are complemented by dielectric experiments at audio and radio frequencies. We identify a low-lying excitation close to 0.5 THz, which is only weakly temperature dependent and probably corresponds to a molecular excitation within the electronic level scheme of the V4 clusters. In addition, we detect complex temperature-dependent behavior of a low-lying phononic excitation, closely linked to the onset of orbitally driven ferroelectricity. In the high-temperature cubic phase, which is paramagnetic and orbitally disordered, this excitation is of relaxational character becomes an overdamped Lorentzian mode in the orbitally ordered phase below the Jahn-Teller transition, and finally appears as well-defined phonon excitation in the antiferromagnetic state. Abrupt changes in the real and imaginary parts of the complex dielectric permittivity show that orbital ordering appears via a structural phase transition with strong first-order character and that the onset of antiferromagnetic order is accompanied by significant structural changes, which are of first-order character, too. Dielectric spectroscopy documents that at low frequencies, significant dipolar relaxations are present in the orbitally ordered, paramagnetic phase only. In contrast to the closely related GaV4S8 , this relaxation dynamics that most likely mirrors coupled orbital and polar fluctuations does not seem to be related to the dynamic processes detected in the THz regime.

Analyzing the effect of gate dielectric on the leakage currents

Directory of Open Access Journals (Sweden)

Sakshi

2016-01-01

Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

Electrical conduction and dielectric relaxation in p-type PVA/CuI polymer composite

Directory of Open Access Journals (Sweden)

M.H. Makled

2013-11-01

Full Text Available PVA/CuI polymer composite samples have been prepared and subjected to characterizations using FT-IR spectroscopy, DSC analysis, ac spectroscopy and dc conduction. The FT-IR spectral analysis shows remarkable variation of the absorption peak positions whereas DSC illustrates a little decrease of both glass transition temperature, Tg, and crystallization fraction, χ, with increasing CuI concentration. An increase of dc conductivity for PVA/CuI nano composite by increasing CuI concentration is recoded up to 15 wt%, besides it obeys Arhenuis plot with an activation energy in the range 0.54–1.32 eV. The frequency dependence of ac conductivity showed power law with an exponent 0.33 < s < 0.69 which predicts hopping conduction mechanism. The frequency dependence of both dielectric permittivity and dielectric loss obeys Debye dispersion relations in wide range of temperatures and frequency. Significant values of dipole relaxation time obtained which are thermally activated with activation energies in the range 0.33–0.87 eV. A significant value of hopping distance in the range 3.4–1.2 nm is estimated in agreement with the value of Bohr radius of the exciton.

Crossing regimes of temperature dependence in animal movement.

Science.gov (United States)

Gibert, Jean P; Chelini, Marie-Claire; Rosenthal, Malcolm F; DeLong, John P

2016-05-01

A pressing challenge in ecology is to understand the effects of changing global temperatures on food web structure and dynamics. The stability of these complex ecological networks largely depends on how predator-prey interactions may respond to temperature changes. Because predators and prey rely on their velocities to catch food or avoid being eaten, understanding how temperatures may affect animal movement is central to this quest. Despite our efforts, we still lack a mechanistic understanding of how the effect of temperature on metabolic processes scales up to animal movement and beyond. Here, we merge a biomechanical approach, the Metabolic Theory of Ecology and empirical data to show that animal movement displays multiple regimes of temperature dependence. We also show that crossing these regimes has important consequences for population dynamics and stability, which depend on the parameters controlling predator-prey interactions. We argue that this dependence upon interaction parameters may help explain why experimental work on the temperature dependence of interaction strengths has so far yielded conflicting results. More importantly, these changes in the temperature dependence of animal movement can have consequences that go well beyond ecological interactions and affect, for example, animal communication, mating, sensory detection, and any behavioral modality dependent on the movement of limbs. Finally, by not taking into account the changes in temperature dependence reported here we might not be able to properly forecast the impact of global warming on ecological processes and propose appropriate mitigation action when needed. © 2016 John Wiley & Sons Ltd.

Low frequency alternating current conduction and dielectric relaxation in polypyrrole irradiated with 100 MeV swift heavy ions of silver (Ag8+)

International Nuclear Information System (INIS)

Kaur, Amarjeet; Dhillon, Anju; Avasthi, D.K.

2013-01-01

Polypyrrole (PPY) films were prepared by electrochemical polymerization technique. The fully undoped samples were irradiated with different radiation fluences ranging from 10 10 to 10 12 ions cm −2 of 100 MeV silver (Ag 8+ ) ions. The temperature dependence of ac conductivity [σ m (ω)], dielectric constant (ε′) and dielectric loss (ε′′) of both irradiated as well as unirradiated samples have been investigated in 77–300 K. There exists typical Debye type dispersion. Giant increase in dielectric constant has been observed for irradiated samples which is attributed to polaronic defects produced during irradiation. - Graphical abstract: Display Omitted - Highlights: • Polypyrrole samples were prepared by electrochemical technique. • The fully undoped samples were irradiated with 100 MeV silver (Ag 8+ ) ions. • Giant increase in dielectric constant in irradiated samples is observed. • Dielectric behaviour is attributed to polaronic defects produced during irradiation

Application of dielectric constant measurement in microwave sludge disintegration and wastewater purification processes.

Science.gov (United States)

Kovács, Petra Veszelovszki; Lemmer, Balázs; Keszthelyi-Szabó, Gábor; Hodúr, Cecilia; Beszédes, Sándor

2018-05-01

It has been numerously verified that microwave radiation could be advantageous as a pre-treatment for enhanced disintegration of sludge. Very few data related to the dielectric parameters of wastewater of different origins are available; therefore, the objective of our work was to measure the dielectric constant of municipal and meat industrial wastewater during a continuous flow operating microwave process. Determination of the dielectric constant and its change during wastewater and sludge processing make it possible to decide on the applicability of dielectric measurements for detecting the organic matter removal efficiency of wastewater purification process or disintegration degree of sludge. With the measurement of dielectric constant as a function of temperature, total solids (TS) content and microwave specific process parameters regression models were developed. Our results verified that in the case of municipal wastewater sludge, the TS content has a significant effect on the dielectric constant and disintegration degree (DD), as does the temperature. The dielectric constant has a decreasing tendency with increasing temperature for wastewater sludge of low TS content, but an adverse effect was found for samples with high TS and organic matter contents. DD of meat processing wastewater sludge was influenced significantly by the volumetric flow rate and power level, as process parameters of continuously flow microwave pre-treatments. It can be concluded that the disintegration process of food industry sludge can be detected by dielectric constant measurements. From technical purposes the applicability of dielectric measurements was tested in the purification process of municipal wastewater, as well. Determination of dielectric behaviour was a sensitive method to detect the purification degree of municipal wastewater.

In-beam dielectric properties of alumina

International Nuclear Information System (INIS)

Molla, J.; Ibarra, A.; Hodgson, E.R.

1995-01-01

The dielectric properties (permittivity and loss tangent) of a 99.7% purity alumina grade have been measured over a wide frequency range (1 kHz-15 GHz) before and after 2 MeV electron irradiation at different temperatures. The dielectric properties at 15 GHz were measured during irradiation. Both prompt and fluence effects are observed together with permanent changes which continue to evolve following irradiation. The behaviour is complex, consistent with both radiation induced electronic effects and aggregation processes. ((orig.))

Temperature dependence of LRE-HRE-TM thin films

Science.gov (United States)

Li, Zuoyi; Cheng, Xiaomin; Lin, Gengqi; Li, Zhen; Huang, Zhixin; Jin, Fang; Wang, Xianran; Yang, Xiaofei

2003-04-01

Temperature dependence of the properties of RE-TM thin films is very important for MO recording. In this paper, we studied the temperature dependence of the magnetic and magneto-optical properties of the amorphous LRE-HRE-TM single layer thin films and LRE-HRE-TM/HRE-TM couple-bilayered thin films. For LRE-HRE-TM single layer thin films, the temperature dependence of the magnetization was investigated by using the mean field theory. The experimental and theoretical results matched very well. With the LRE substitution in HRE-TM thin film, the compensation temperature Tcomp decreased and the curie temperature Tc remained unchanged. Kerr rotation angle became larger and the saturation magnetization Ms at room temperature increased. For LRE-HRE-TM/HRE-TM couple-bilayered thin films, comparisons of the temperature dependences of the coercivities and Kerr rotation angles were made between isolated sublayers and couple-bilayered thin film.

Dielectric properties of PLZT-x/65/35 (2≤x≤13 under mechanical stress, electric field and temperature loading

Directory of Open Access Journals (Sweden)

K. Pytel

2013-01-01

Full Text Available We investigated the effect of uniaxial pressure (0÷1000 bars applied parallely to the ac electric field on dielectric properties of PLZT-x/65/35 (2≤x≤13 ceramics. There was revealed a significant effect of the external stress on these properties. The application of uniaxial pressure leads to the change of the peak intensity of the electric permittivity (ϵ, of the frequency dispersion as well as of the dielectric hysteresis. The peak intensity ϵ becomes diffused/sharpened and shifts to a higher/lower temperatures with increasing the pressure. It was concluded that the application of uniaxial pressure induces similar effects as increasing the Ti ion concentration in PZT system. We interpreted our results based on the domain switching processes under the action of combined electromechanical loading.

An equivalent method of mixed dielectric constant in passive microwave/millimeter radiometric measurement

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Su, Jinlong; Tian, Yan; Hu, Fei; Gui, Liangqi; Cheng, Yayun; Peng, Xiaohui

2017-10-01

Dielectric constant is an important role to describe the properties of matter. This paper proposes This paper proposes the concept of mixed dielectric constant(MDC) in passive microwave radiometric measurement. In addition, a MDC inversion method is come up, Ratio of Angle-Polarization Difference(RAPD) is utilized in this method. The MDC of several materials are investigated using RAPD. Brightness temperatures(TBs) which calculated by MDC and original dielectric constant are compared. Random errors are added to the simulation to test the robustness of the algorithm. Keywords: Passive detection, microwave/millimeter, radiometric measurement, ratio of angle-polarization difference (RAPD), mixed dielectric constant (MDC), brightness temperatures, remote sensing, target recognition.

Organic dielectrics in high voltage cables

Energy Technology Data Exchange (ETDEWEB)

Vermeer, J

1962-03-01

It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

Dielectric dispersion, relaxation dynamics and thermodynamic studies of Beta-Alanine in aqueous solutions using picoseconds time domain reflectometry

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Vinoth, K.; Ganesh, T.; Senthilkumar, P.; Sylvester, M. Maria; Karunakaran, D. J. S. Anand; Hudge, Praveen; Kumbharkhane, A. C.

2017-09-01

The aqueous solution of beta-alanine characterised and studied by their dispersive dielectric properties and relaxation process in the frequency domain of 10×106 Hz to 30×109 Hz with varying concentration in mole fractions and temperatures. The molecular interaction and dielectric parameters are discussed in terms of counter-ion concentration theory. The static permittivity (ε0), high frequency dielectric permittivity (ε∞) and excess dielectric parameters are accomplished by frequency depended physical properties and relaxation time (τ). Molecular orientation, ordering and correlation factors are reported as confirmation of intermolecular interactions. Ionic conductivity and thermo dynamical properties are concluded with the behaviour of the mixture constituents. Solute-solvent, solute-solute interaction, structure making and breaking abilities of the solute in aqueous medium are interpreted. Fourier Transform Infrared (FTIR) spectra of beta- alanine single crystal and liquid state have been studied. The 13C Nuclear Magnetic Resonance (NMR) spectral studies give the signature for resonating frequencies and chemical shifts of beta-alanine.

Dielectric strength of SiO2 in a CMOS transistor structure

International Nuclear Information System (INIS)

Soden, J.M.

1979-01-01

The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate

Low-Temperature Sintering Li3Mg1.8Ca0.2NbO6 Microwave Dielectric Ceramics with LMZBS Glass

Science.gov (United States)

Wang, Gang; Zhang, Huaiwu; Liu, Cheng; Su, Hua; Jia, Lijun; Li, Jie; Huang, Xin; Gan, Gongwen

2018-05-01

Li3Mg1.8Ca0.2NbO6 ceramics doped with Li2O-MgO-ZnO-B2O3-SiO2 glass (LMZBS) were prepared via a solid-state route. The LMZBS glass effectively reduced the sintering temperature of Li3Mg1.8Ca0.2NbO6 ceramics to 950°C. The effects of the LMZBS glass on the sintering behavior, microstructures and microwave dielectric properties of Li3Mg1.8Ca0.2NbO6 ceramics are discussed in detail. Among all the LMZBS doped Li3Mg1.8Ca0.2NbO6 ceramics, the sample with 1 wt.% of LMZBS glass sintered at 950°C for 4 h exhibited good dielectric properties: ɛ r = 16.7, Q × f = 31,000 GHz (9.92 GHz), τ f = - 1.3 ppm/°C. The Li3Mg1.8Ca0.2NbO6 ceramics possessed excellent chemical compatibility with Ag electrodes, and could be applied in low temperature co-fired ceramics (LTCC) applications.

Structure and dielectric properties in the radio frequency range of polymer composites based on vanadium dioxide

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Kolbunov V.R.

2015-06-01

Full Text Available Polymer composites with active fillers are recently considered to be promising materials for the design of new functional devices with controllable properties and are intensively investigated. Dielectric studies are one of the most effective methods for studying structural features and mechanisms of conductivity formation for this type of two-component systems. The paper presents research results of the dielectric characteristics in the range of radio frequency of 50 kHz — 10 MHz and temperature range of 30—60°C of polyethylene composites of vanadium dioxide with different volume fractions of filler. Two dispersion areas were found: a high-frequency area caused by the Maxwell charge separation on the boundaries of the polyethylene matrix — conductive filler of VI2 crystallites, and a low frequency area associated with the presence of the transition layer at this boundary. The relative permittivity of the composite has a tendency to a decrease in absolute value with increasing temperature. The analysis of the low-frequency dependence of the dielectric constant of the value of the filler’s volume fraction revealed that the investigated composite belongs to two-component statistical mixtures with a transition layer between the components.

Temperature Dependence of Factors Controlling Isoprene Emissions

Science.gov (United States)

Duncan, Bryan N.; Yoshida, Yasuko; Damon, Megan R.; Douglass, Anne R.; Witte, Jacquelyn C.

2009-01-01

We investigated the relationship of variability in the formaldehyde (HCHO) columns measured by the Aura Ozone Monitoring Instrument (OMI) to isoprene emissions in the southeastern United States for 2005-2007. The data show that the inferred, regional-average isoprene emissions varied by about 22% during summer and are well correlated with temperature, which is known to influence emissions. Part of the correlation with temperature is likely associated with other causal factors that are temperature-dependent. We show that the variations in HCHO are convolved with the temperature dependence of surface ozone, which influences isoprene emissions, and the dependence of the HCHO column to mixed layer height as OMI's sensitivity to HCHO increases with altitude. Furthermore, we show that while there is an association of drought with the variation in HCHO, drought in the southeastern U.S. is convolved with temperature.

Temperature dependence of radiation chemistry of polymers

International Nuclear Information System (INIS)

Garrett, R.W.; Hill, D.J.T.; Le, T.T.; Milne, K.A.; O'Donnell, J.H.; Perera, S.M.C.; Pomery, P.J.

1990-01-01

Chemical reactions which occur during radiolysis of polymers usually show an increase in rate with increasing temperature that can be described by an Arrhenius relationship. The magnitude of the activation energy can vary widely and is affected by physical, as well as chemical, factors. Different reaction rates may be expected in crystalline and amorphous morphologies, and in glassy and rubbery regions. The temperature dependence of radiolysis reactions can be expected to show discontinuities at the glass and melting transitions, T g and T m . The ceiling temperature, T c , for polymerization/depolymerization will also affect the rate of degradation, especially for depropagation to monomer. The temperature for this effect depends on the molecular structure of the polymer. The temperature dependence of free radical reactions can be studied by cryogenic trapping and ESR spectroscopy during thermal profiling. Increased degradation rates at high dose rates can be due to increased temperatures resulting from energy absorption

Positron annihilation response and broadband dielectric spectroscopy: salol.

Science.gov (United States)

Bartoš, J; Iskrová, M; Köhler, M; Wehn, R; Sauša, O; Lunkenheimer, P; Krištiak, J; Loidl, A

2011-09-01

A phenomenological analysis of the ortho-positronium (o-Ps) annihilation from positron annihilation lifetime spectroscopy (PALS) and the dynamics from broadband dielectric spectroscopy (BDS) are reported on a small molecular glass former of intermediate H-bonding and fragility: salol. The dielectric spectra extend over a very broad frequency range of about 2 × 10(-2)-3.5 × 10(11) Hz, providing information on the α-relaxation, the secondary relaxation giving rise to the excess wing, and the shallow high-frequency minimum in the micro- to milli-meter wave range. A number of empirical correlations between the o-Ps lifetime, τ(3)(T), and the various spectral and relaxation features have been observed. Thus, the phenomenological evaluation of the τ(3)(T) dependence of the PALS response of the amorphous sample reveals three characteristic PALS temperatures: T(g)(PALS), T(b1)(L) = 1.15T(g)(PALS) and T(b2)(L) = 1.25T(g)(PALS), which are discussed in relation to similar findings for some typical small molecular vdW- and H-bonded glass formers. A slighter change of the slope at T(b1)(L) appears to be related to the transition from excess wing to the primary α-process-dominated behavior, with the secondary process dominating in the deeply supercooled liquid state below T(b1)(L). The high-temperature plateau effect in the τ (3)(T) plot occurs at T(b2)(L) and agrees with the characteristic Stickel temperature, T(B)(ST), marking a qualitative change of the primary α process, but it does not follow the relation T(b2)(L) application of the two-order parameter (TOP) model to the structural relaxation as represented by the primary α relaxation times from BDS leads to the characteristic TOP temperature, T(m)(c), close to T(b1) from PALS. Within this model the phenomenological interpretation is offered based on changes in the probability of occurrence of solid-like and liquid-like domains to explain the dynamic as well as PALS responses. In summary, all the empirical

Dielectric and electrical conductivity studies of bulk lead (II) oxide (PbO)

Energy Technology Data Exchange (ETDEWEB)

Darwish, A.A.A., E-mail: aaadarwish@gmail.com [Department of Physics, Faculty of Education at Al-Mahweet, Sana’a University, Al-Mahwit (Yemen); Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); El-Zaidia, E.F.M.; El-Nahass, M.M. [Department of Physics, Faculty of Education, Ain Shams University, Rorxy, Cairo 11757 (Egypt); Hanafy, T.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia); Department of Physics, Faculty of Science, Fayoum University, 63514 El Fayoum (Egypt); Al-Zubaidi, A.A. [Department of Physics, Faculty of Science, University of Tabuk, P.O. Box 741, Tabuk 71491, Tabuk (Saudi Arabia)

2014-03-15

Highlights: • The AC measurements of PbO were measured at temperature range 313–523 K. • The dielectric constants increased with temperature. • The mechanism responsible for AC conduction is electronic hopping. -- Abstract: The dielectric properties, the impedance spectroscopy and AC conductivity of bulk PbO have been investigated as a function of frequency and temperature. The measurements were carried out in the frequency range from 40 to 5 × 10{sup 6} Hz and in temperature range from 313 to 523 K. The frequency response of dielectric constant, ε{sub 1}, and dielectric loss index, ε{sub 2}, as a function of temperature were studied. The values of ε{sub 1} and ε{sub 2} were found to decrease with the increase in frequency. However, they increase with the increase in temperature. The presence of a single arc in the complex modulus spectrum at different temperatures confirms the single-phase character of the PbO. The AC conductivity exhibited a universal dynamic response: σ{sub AC} = Aω{sup s}. The AC conductivity was also found to increase with increasing temperature and frequency. The correlation barrier hopping (CBH) model was found to apply to the AC conductivity data. The calculated values of s were decreased with temperature. This behavior reveals that the conduction mechanism for PbO samples is CBH. The activation energy for AC conductivity decreases with increasing frequency. This confirms that the hopping conduction to the dominant mechanism for PbO samples.

Breakdown of coupling dielectrics for Si microstrip detectors

International Nuclear Information System (INIS)

Candelori, A.; Paccagnella, A.; Padova Univ.; Saglimbeni, G.

1999-01-01

Double-layer coupling dielectrics for AC-coupled Si microstrip detectors have been electrically characterized in order to determine their performance in a radiation-harsh environment, with a focus on the dielectric breakdown. Two different dielectric technologies have been investigated: SiO 2 /TEOS and SiO 2 /Si 3 N 4 . Dielectrics have been tested by using a negative gate voltage ramp of 0.2 MV/(cm·s). The metal/insulator/Si I-V characteristics show different behaviours depending on the technology. The extrapolated values of the breakdown field for unirradiated devices are significantly higher for SiO 2 /Si 3 N 4 dielectrics, but the data dispersion is lower for SiO 2 /TEOS devices. No significant variation of the breakdown field has been measured after a 10 Mrad (Si) γ irradiation for SiO 2 /Si 3 N 4 dielectrics. Finally, the SiO 2 /Si 3 N 4 DC conduction is enhanced if a positive gate voltage ramp is applied with respect to the negative one, due to the asymmetric conduction of the double-layer dielectric

PLZT capacitor and method to increase the dielectric constant

Science.gov (United States)

Taylor, Ralph S.; Fairchild, Manuel Ray; Balachjandran, Uthamalingam; Lee, Tae H.

2017-12-12

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

Hysteresis behaviour of low-voltage organic field-effect transistors employing high dielectric constant polymer gate dielectrics

International Nuclear Information System (INIS)

Kim, Se Hyun; Yun, Won Min; Kwon, Oh-Kwan; Hong, Kipyo; Yang, Chanwoo; Park, Chan Eon; Choi, Woon-Seop

2010-01-01

Here, we report on the fabrication of low-voltage-operating pentacene-based organic field-effect transistors (OFETs) that utilize crosslinked cyanoethylated poly(vinyl alcohol) (CR-V) gate dielectrics. The crosslinked CR-V-based OFET could be operated successfully at low voltages (below 4 V), but abnormal behaviour during device operation, such as uncertainty in the field-effect mobility (μ) and hysteresis, was induced by the slow polarization of moieties embedded in the gate dielectric (e.g. polar functionalities, ionic impurities, water and solvent molecules). In an effort to improve the stability of OFET operation, we measured the dependence of μ and hysteresis on dielectric thickness, CR-V crosslinking conditions and sweep rate of the gate bias. The influence of the CR-V surface properties on μ, hysteresis, and the structural and morphological features of the pentacene layer grown on the gate dielectric was characterized and compared with the properties of pentacene grown on a polystyrene surface.

Enhanced dielectric and ferroelectric characteristics in Ca-modified BaTiO3 ceramics

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Xiao Na Zhu

2013-08-01

Full Text Available Synergic modification of BaTiO3 ceramics was investigated by Ca-substitution, and the superior dielectric and ferroelectric properties were determined together with the structure evolution. X-ray diffraction (XRD analysis demonstrated a large solubility limit above x = 0.25 in Ba1−xCaxTiO3 solid solution where the fine grain structure was observed with increasing x. Room temperature dielectric constant as high as 1655 was achieved in the present ceramics together with the significantly reduced dielectric loss of 0.013 (x = 0.20 at 100 kHz, where the Curie temperature kept almost a constant while other two transition temperatures decreased continuously with increasing x. More importantly, the remanent polarization Pr and dielectric strength Eb were significantly enhanced by Ca-substitution, and the best Pr (11.34 μC/cm2 and the highest dielectric strength Eb (75 kV/cm were acquired at x = 0.25. The present ceramics should be very desirable for the applications such as high density energy storage devices.

Core-shell structured polystyrene/BaTiO3 hybrid nanodielectrics prepared by in situ RAFT polymerization: a route to high dielectric constant and low loss materials with weak frequency dependence.

Science.gov (United States)

Yang, Ke; Huang, Xingyi; Xie, Liyuan; Wu, Chao; Jiang, Pingkai; Tanaka, Toshikatsu

2012-11-23

A novel route to prepare core-shell structured nanocomposites with excellent dielectric performance is reported. This approach involves the grafting of polystyrene (PS) from the surface of BaTiO(3) by an in situ RAFT polymerization. The core-shell structured PS/BaTiO(3) nanocomposites not only show significantly increased dielectric constant and very low dielectric loss, but also have a weak frequency dependence of dielectric properties over a wide range of frequencies. In addition, the dielectric constant of the nanocomposites can also be easily tuned by varying the thickness of the PS shell. Our method is very promising for preparing high-performance nanocomposites used in energy-storage devices. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dielectric response and ac conductivity analysis of hafnium oxide nanopowder

International Nuclear Information System (INIS)