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Sample records for technology semiconductor process

  1. Fundamentals of semiconductor processing technology

    CERN Document Server

    El-Kareh, Badih

    1995-01-01

    The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac­ turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil­ ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech­ n...

  2. Radiation processing of polymers and semiconductors at the Institute of Nuclear Chemistry and Technology

    International Nuclear Information System (INIS)

    Zimek, Z.; Przybytniak, G.; Kaluska, I.

    2006-01-01

    R(and)D studies in the field of radiation technology in Poland are mostly concentrated at the Institute of Nuclear Chemistry and Technology (INCT). The results of the INCT works on polymer and semiconductor modification have been implemented in various branches of national economy, particularly in industry and medicine. Radiation technology for polymer modification was implemented in the middle of the 1970-ties. Among others, the processes of irradiation and heat shrinkable products expansion have been developed. The transfer of this technology to Polish industry was performed in the middle of the 1980-ties. The present study aims at the formulation of new PE composites better suited to new generation of heat shrinkable products, for example, a new generation of hot-melt adhesives has been developed to meet specific requirements of customers. Modified polypropylene was used for the production of medical devices sterilized by radiation, especially disposable syringes, to overcome the low radiation resistance of the basic material. Modified polypropylene (PP-M) has been formulated at the INCT to provide material suitable for medical application and radiation sterilization process. Modification of semiconductor devices by EB was applied on an industrial scale since 1978 when the INCT and the LAMINA semiconductor factory successfully adopted that technology to improve specific semiconductor devices. This activity is continued on commercial basis where the INCT facilities served to contract irradiation of certain semiconductor devices according to the manufacturing program of the Polish factory and customers from abroad. (author)

  3. Semiconductor technology program. Progress briefs

    Science.gov (United States)

    Bullis, W. M.

    1980-01-01

    Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

  4. Proceedings of defect engineering in semiconductor growth, processing and device technology

    International Nuclear Information System (INIS)

    Ashok, S.; Chevallier, J.; Sumino, K.; Weber, E.

    1992-01-01

    This volume results from a symposium that was part of the 1992 Spring Meeting of the Materials Research Society, held in San Francisco from April 26 to May 1, 1992. The symposium, entitled Defect Engineering in Semiconductor Growth, Processing and Device Technology, was the first of its kind at MRS and brought together academic and industrial researchers with varying perspectives on defects in semiconductors. Its aim was to go beyond defect control, and focus instead on deliberate and controlled introduction and manipulation of defects in order to engineer some desired properties in semiconductor materials and devices. While the concept of defect engineering has at least a vague perception in techniques such as impurity/defect gettering and the use of the EL2 level in GaAs, more extensive as well as subtle uses of defects are emerging to augment the field. This symposium was intended principally to encourage creative new applications of defects in all aspects of semiconductor technology. The organization of this proceedings volume closely follows the topics around which the sessions were built. The papers on grown-in defects in bulk crystals deal with overviews of intrinsic and impurity-related defects, their influence on electrical, optical and mechanical properties, as well as the use of impurities to arrest certain types of defects during growth and defects to control growth. The issues addressed by the papers on defects in thin films include impurity and stoichiometry control, defects created by plasmas and the use of electron/ion irradiation for doping control

  5. Semiconductor

    International Nuclear Information System (INIS)

    2000-01-01

    This book deals with process and measurement of semiconductor. It contains 20 chapters, which goes as follows; semiconductor industry, introduction of semiconductor manufacturing, yield of semiconductor process, materials, crystal growth and a wafer forming, PN, control pollution, oxidation, photomasking photoresist chemistry, photomasking technologies, diffusion and ion injection, chemical vapor deposition, metallization, wafer test and way of evaluation, semiconductor elements, integrated circuit and semiconductor circuit technology.

  6. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  7. Large area SiC coating technology of RBSC for semiconductor processing component

    International Nuclear Information System (INIS)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described

  8. Introduction to semiconductor manufacturing technology

    CERN Document Server

    2012-01-01

    IC chip manufacturing processes, such as photolithography, etch, CVD, PVD, CMP, ion implantation, RTP, inspection, and metrology, are complex methods that draw upon many disciplines. [i]Introduction to Semiconductor Manufacturing Technologies, Second Edition[/i] thoroughly describes the complicated processes with minimal mathematics, chemistry, and physics; it covers advanced concepts while keeping the contents accessible to readers without advanced degrees. Designed as a textbook for college students, this book provides a realistic picture of the semiconductor industry and an in-depth discuss

  9. Dry etching technology for semiconductors

    CERN Document Server

    Nojiri, Kazuo

    2015-01-01

    This book is a must-have reference to dry etching technology for semiconductors, which will enable engineers to develop new etching processes for further miniaturization and integration of semiconductor integrated circuits.  The author describes the device manufacturing flow, and explains in which part of the flow dry etching is actually used. The content is designed as a practical guide for engineers working at chip makers, equipment suppliers and materials suppliers, and university students studying plasma, focusing on the topics they need most, such as detailed etching processes for each material (Si, SiO2, Metal etc) used in semiconductor devices, etching equipment used in manufacturing fabs, explanation of why a particular plasma source and gas chemistry are used for the etching of each material, and how to develop etching processes.  The latest, key technologies are also described, such as 3D IC Etching, Dual Damascene Etching, Low-k Etching, Hi-k/Metal Gate Etching, FinFET Etching, Double Patterning ...

  10. Analysis of technology and development plan on Lithography process of display industry and semiconductor

    International Nuclear Information System (INIS)

    2005-02-01

    This reports the seminar on Lithography in 2005, which includes these contents; Introduction of Lithography, equipment in NNFC, Exposure technology with fabrication, basic and application optics, RET and Lens aberrations, Alignment and Overlay and Metrology, Resist process with prime, mechanism, issues, resist technology and track system, Mask and OPC such as mask, fabrication, mask technology, proximity effect and OPC, Next generation, Lithography with NGL, Immersion and imprint. In the last, there are questions and answers.

  11. Fiscal 1998 research achievement report. Development of key technology for high-efficiency semiconductor manufacturing process; 1998 nendo kokoritsu handotai seizo process kiban gijutsu kaihatsu seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-05-01

    In the development of large-aperture/high-density plasma technology, research and development was carried out for balanced electron drift plasma technologies for uniform control of plasma density and the like, such as an excited plasma source and plasma drift to enable wide-range plasma generation in a chamber. In the development of high-efficiency exposure technology, studies were made for stable generation and control of short wavelength excimer laser and for higher-speed large-aperture mask writing by use of an electron beam. In the development of higher-speed processing and energy-efficient technologies, research and development was conducted involving probe card technology for increasing the speed of semiconductor inspection, software-aided virtual tester technology, local energy-efficient cleaning technology in wafer processing and transportation, sheet-type flexible manufacturing system, and the like. (NEDO)

  12. Thermodynamic concepts in semiconductor quantum dot technology

    International Nuclear Information System (INIS)

    Shchukin, V.

    2001-01-01

    Major trends of the modern civilization are related to the changing of the industrial society into an information and knowledge-based society. This transformation is to a large extent based on the modern information and communication technology. The nobel prize-2000 in physics is a remarkable recognition of an extremely high significance of this kind of technology. The nobel prize has been awarded with one half jointly to Zhores I. Alferov and Herbert Kroemer for developing semiconductor heterostructures used in high-speed- and opto-electronics and one half to Jack St. Clair Kilby for this part in the invention of the integrated circuit. The development of the semiconductor heterostructures technology requires a profound understanding of the basic growth mechanisms involved in any technological process, including any type of epitaxy, either the liquid phase epitaxy (LPE), or the metalorganic vapor phase epitaxy (MOVPE), or the molecular beam epitaxy (MBE). Starting from this pioneering works on semiconductor heterostructures till present time, Professor Zh. Alferov has always paid much attention to complex and comprehensive study of the subject. This covers the growth - as well as the post-growth technology including the theoretical modeling of the technology, the characterization of the heterostructures, and the device design. Such complex approach has master mined the scientific and technological success of Abraham loffe Institute in the area of semiconductor heterostructures, and later, nano structures. (Orig../A.B.)

  13. ENVIRONMENTAL TECHNOLOGY INITIATIVE: CHEMICAL-FREE CLEANING OF SEMICONDUCTORS BY THE RADIANCE PROCESS

    Science.gov (United States)

    The Radiance Process is a patented dry process for removing contaminants from surfaces. It uses light, usually from a pulsed laser and a gas inert to the surface, to entrain released contaminants. The focus of this effort is to assess the applicability of the Radiance Process t...

  14. Fundamentals of semiconductor manufacturing and process control

    CERN Document Server

    May, Gary S

    2006-01-01

    A practical guide to semiconductor manufacturing from process control to yield modeling and experimental design Fundamentals of Semiconductor Manufacturing and Process Control covers all issues involved in manufacturing microelectronic devices and circuits, including fabrication sequences, process control, experimental design, process modeling, yield modeling, and CIM/CAM systems. Readers are introduced to both the theory and practice of all basic manufacturing concepts. Following an overview of manufacturing and technology, the text explores process monitoring methods, including those that focus on product wafers and those that focus on the equipment used to produce wafers. Next, the text sets forth some fundamentals of statistics and yield modeling, which set the foundation for a detailed discussion of how statistical process control is used to analyze quality and improve yields. The discussion of statistical experimental design offers readers a powerful approach for systematically varying controllable p...

  15. Semiconductor terahertz technology devices and systems at room temperature operation

    CERN Document Server

    Carpintero, G; Hartnagel, H; Preu, S; Raisanen, A

    2015-01-01

    Key advances in Semiconductor Terahertz (THz) Technology now promises important new applications enabling scientists and engineers to overcome the challenges of accessing the so-called "terahertz gap".  This pioneering reference explains the fundamental methods and surveys innovative techniques in the generation, detection and processing of THz waves with solid-state devices, as well as illustrating their potential applications in security and telecommunications, among other fields. With contributions from leading experts, Semiconductor Terahertz Technology: Devices and Systems at Room Tempe

  16. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  17. NICE3 SO3 Cleaning Process in Semiconductor Manufacturing

    International Nuclear Information System (INIS)

    Blazek, Steve

    1999-01-01

    This fact sheet explains how Anon, Inc., has developed a novel method of removing photoresist--a light-sensitive material used to produce semiconductor wafers for computers--from the computer manufacturing process at reduced cost and greater efficiency. The new technology is technically superior to existing semiconductor cleaning methods and results in reduced use of hazardous chemicals

  18. Processing of insulators and semiconductors

    Science.gov (United States)

    Quick, Nathaniel R.; Joshi, Pooran C.; Duty, Chad Edward; Jellison, Jr., Gerald Earle; Angelini, Joseph Attilio

    2015-06-16

    A method is disclosed for processing an insulator material or a semiconductor material. The method includes pulsing a plasma lamp onto the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a large area region of the material. The method may further include pulsing a laser onto a selected region of the material to diffuse a doping substance into the material, to activate the doping substance in the material or to metallize a selected region of the material.

  19. Semiconductor processing with excimer lasers

    International Nuclear Information System (INIS)

    Young, R.T.; Narayan, J.; Christie, W.H.; van der Leeden, G.A.; Rothe, D.E.; Cheng, L.J.

    1983-01-01

    The advantages of pulsed excimer lasers for semiconductor processing are reviewed. Extensive comparisons of the quality of annealing of ion-implanted Si obtained with XeCl and ruby lasers have been made. The results indicate that irrespective of the large differences in the optical properties of Si at uv and visible wavelengths, the efficiency of usage of the incident energy for annealing is comparable for the two lasers. However, because of the excellent optical beam quality, the XeCl laser can provide superior control of the surface melting and the resulting junction depth. Furthermore, the concentrations of electrically active point defects in the XeCl laser annealed region are 2 to 3 orders of magnitude lower than that obtained from ruby or Nd:YAG lasers. All these results seem to suggest that XeCl lasers should be suitable for fabricating not only solar cells but also the more advanced device structures required for VLSI or VHSIC applications

  20. Rapid thermal processing and beyond applications in semiconductor processing

    CERN Document Server

    Lerch, W

    2008-01-01

    Heat-treatment and thermal annealing are very common processing steps which have been employed during semiconductor manufacturing right from the beginning of integrated circuit technology. In order to minimize undesired diffusion, and other thermal budget-dependent effects, the trend has been to reduce the annealing time sharply by switching from standard furnace batch-processing (involving several hours or even days), to rapid thermal processing involving soaking times of just a few seconds. This transition from thermal equilibrium, to highly non-equilibrium, processing was very challenging a

  1. Semiconductor Manufacturing equipment introduction

    International Nuclear Information System (INIS)

    Im, Jong Sun

    2001-02-01

    This book deals with semiconductor manufacturing equipment. It is comprised of nine chapters, which are manufacturing process of semiconductor device, history of semiconductor manufacturing equipment, kinds and role of semiconductor manufacturing equipment, construction and method of semiconductor manufacturing equipment, introduction of various semiconductor manufacturing equipment, spots of semiconductor manufacturing, technical elements of semiconductor manufacturing equipment, road map of technology of semiconductor manufacturing equipment and semiconductor manufacturing equipment in the 21st century.

  2. Handbook of compound semiconductors growth, processing, characterization, and devices

    CERN Document Server

    Holloway, Paul H

    1996-01-01

    This book reviews the recent advances and current technologies used to produce microelectronic and optoelectronic devices from compound semiconductors. It provides a complete overview of the technologies necessary to grow bulk single-crystal substrates, grow hetero-or homoepitaxial films, and process advanced devices such as HBT's, QW diode lasers, etc.

  3. Microeconomics of process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Process window control enables accelerated design-rule shrinks for both logic and memory manufacturers, but simple microeconomic models that directly link the effects of process window control to maximum profitability are rare. In this work, we derive these links using a simplified model for the maximum rate of profit generated by the semiconductor manufacturing process. We show that the ability of process window control to achieve these economic objectives may be limited by variability in the larger manufacturing context, including measurement delays and process variation at the lot, wafer, x-wafer, x-field, and x-chip levels. We conclude that x-wafer and x-field CD control strategies will be critical enablers of density, performance and optimum profitability at the 90 and 65nm technology nodes. These analyses correlate well with actual factory data and often identify millions of dollars in potential incremental revenue and cost savings. As an example, we show that a scatterometry-based CD Process Window Monitor is an economically justified, enabling technology for the 65nm node.

  4. Blasting detonators incorporating semiconductor bridge technology

    Energy Technology Data Exchange (ETDEWEB)

    Bickes, R.W. Jr.

    1994-05-01

    The enormity of the coal mine and extraction industries in Russia and the obvious need in both Russia and the US for cost savings and enhanced safety in those industries suggests that joint studies and research would be of mutual benefit. The author suggests that mine sites and well platforms in Russia offer an excellent opportunity for the testing of Sandia`s precise time-delay semiconductor bridge detonators, with the potential for commercialization of the detonators for Russian and other world markets by both US and Russian companies. Sandia`s semiconductor bridge is generating interest among the blasting, mining and perforation industries. The semiconductor bridge is approximately 100 microns long, 380 microns wide and 2 microns thick. The input energy required for semiconductor bridge ignition is one-tenth the energy required for conventional bridgewire devices. Because semiconductor bridge processing is compatible with other microcircuit processing, timing and logic circuits can be incorporated onto the chip with the bridge. These circuits can provide for the precise timing demanded for cast effecting blasting. Indeed tests by Martin Marietta and computer studies by Sandia have shown that such precise timing provides for more uniform rock fragmentation, less fly rock, reduce4d ground shock, fewer ground contaminants and less dust. Cost studies have revealed that the use of precisely timed semiconductor bridges can provide a savings of $200,000 per site per year. In addition to Russia`s vast mineral resources, the Russian Mining Institute outside Moscow has had significant programs in rock fragmentation for many years. He anticipated that collaborative studies by the Institute and Sandia`s modellers would be a valuable resource for field studies.

  5. Submillimeter Spectroscopic Study of Semiconductor Processing Plasmas

    Science.gov (United States)

    Helal, Yaser H.

    Plasmas used for manufacturing processes of semiconductor devices are complex and challenging to characterize. The development and improvement of plasma processes and models rely on feedback from experimental measurements. Current diagnostic methods are not capable of measuring absolute densities of plasma species with high resolution without altering the plasma, or without input from other measurements. At pressures below 100 mTorr, spectroscopic measurements of rotational transitions in the submillimeter/terahertz (SMM) spectral region are narrow enough in relation to the sparsity of spectral lines that absolute specificity of measurement is possible. The frequency resolution of SMM sources is such that spectral absorption features can be fully resolved. Processing plasmas are a similar pressure and temperature to the environment used to study astrophysical species in the SMM spectral region. Many of the molecular neutrals, radicals, and ions present in processing plasmas have been studied in the laboratory and their absorption spectra have been cataloged or are in the literature for the purpose of astrophysical study. Recent developments in SMM devices have made its technology commercially available for applications outside of specialized laboratories. The methods developed over several decades in the SMM spectral region for these laboratory studies are directly applicable for diagnostic measurements in the semiconductor manufacturing industry. In this work, a continuous wave, intensity calibrated SMM absorption spectrometer was developed as a remote sensor of gas and plasma species. A major advantage of intensity calibrated rotational absorption spectroscopy is its ability to determine absolute concentrations and temperatures of plasma species from first principles without altering the plasma environment. An important part of this work was the design of the optical components which couple 500 - 750 GHz radiation through a commercial inductively coupled plasma

  6. Rapid thermal processing of semiconductors

    CERN Document Server

    Borisenko, Victor E

    1997-01-01

    Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions They thoroughly cover the work of international investigators in the field

  7. Photoexcitation-induced processes in amorphous semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Jai [School of Engineering and Logistics, Charles Darwin University, Darwin, NT 0909 (Australia)]. E-mail: jai.singh@cdu.edu.au

    2005-07-30

    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories.

  8. Photoexcitation-induced processes in amorphous semiconductors

    International Nuclear Information System (INIS)

    Singh, Jai

    2005-01-01

    Theories for the mechanism of photo-induced processes of photodarkening (PD), volume expansion (VE) in amorphous chalcogenides are presented. Rates of spontaneous emission of photons by radiative recombination of excitons in amorphous semiconductors are also calculated and applied to study the excitonic photoluminescence in a-Si:H. Results are compared with previous theories

  9. Review of the Semiconductor Industry and Technology Roadmap.

    Science.gov (United States)

    Kumar, Sameer; Krenner, Nicole

    2002-01-01

    Points out that the semiconductor industry is extremely competitive and requires ongoing technological advances to improve performance while reducing costs to remain competitive and how essential it is to gain an understanding of important facets of the industry. Provides an overview of the initial and current semiconductor technology roadmap that…

  10. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  11. Technology of substrates for molecular beam homo epitaxy of wide - gap AII-BVI semiconductors and construction of a simplified setup for this process

    International Nuclear Information System (INIS)

    Mycielski, A.; Szadkowski, A.; Kaliszek, W.

    2000-01-01

    The technology of 'epi-ready' substrate plates (for MBE) of the wide gap AII-BVI semiconductor compounds, i. e. - preparation of the ultra pure elements, synthesis of the source material, crystallization by the physical vapour transport technique, cutting of the oriented plates, mechano-chemical polishing and preparation of the 'epi-ready' surface - is described, as well as the construction of a simplified version of the MBE setup for covering the substrate plates with the homoepitaxial layer. The results of the characterization of the substrate crystals and plates are presented. (author)

  12. Incorporating DSA in multipatterning semiconductor manufacturing technologies

    Science.gov (United States)

    Badr, Yasmine; Torres, J. A.; Ma, Yuansheng; Mitra, Joydeep; Gupta, Puneet

    2015-03-01

    Multi-patterning (MP) is the process of record for many sub-10nm process technologies. The drive to higher densities has required the use of double and triple patterning for several layers; but this increases the cost of the new processes especially for low volume products in which the mask set is a large percentage of the total cost. For that reason there has been a strong incentive to develop technologies like Directed Self Assembly (DSA), EUV or E-beam direct write to reduce the total number of masks needed in a new technology node. Because of the nature of the technology, DSA cylinder graphoepitaxy only allows single-size holes in a single patterning approach. However, by integrating DSA and MP into a hybrid DSA-MP process, it is possible to come up with decomposition approaches that increase the design flexibility, allowing different size holes or bar structures by independently changing the process for every patterning step. A simple approach to integrate multi-patterning with DSA is to perform DSA grouping and MP decomposition in sequence whether it is: grouping-then-decomposition or decomposition-then-grouping; and each of the two sequences has its pros and cons. However, this paper describes why these intuitive approaches do not produce results of acceptable quality from the point of view of design compliance and we highlight the need for custom DSA-aware MP algorithms.

  13. Technological and organizational diversity and technical advance in the early history of the American semiconductor industry

    Science.gov (United States)

    Cohen, W.; Holbrook, D.; Klepper, S.

    1994-06-01

    This study examines the early years of the semiconductor industry and focuses on the roles played by different size firms in technologically innovative processes. A large and diverse pool of firms participated in the growth of the industry. Three related technological areas were chosen for in-depth analysis: integrated circuits, materials technology, and device packaging. Large business producing vacuum tubes dominated the early production of semiconductor devices. As the market for new devices grew during the 1950's, new firms were founded and existing firms from other industries, e.g. aircraft builders and instrument makers, began to pursue semiconductor electronics. Small firms began to cater to the emerging industry by supplying materials and equipment. These firms contributed to the development of certain aspects of one thousand firms that were playing some part in the semiconductor industry.

  14. Semiconductor laser technology for remote sensing experiments

    Science.gov (United States)

    Katz, Joseph

    1988-01-01

    Semiconductor injection lasers are required for implementing virtually all spaceborne remote sensing systems. Their main advantages are high reliability and efficiency, and their main roles are envisioned in pumping and injection locking of solid state lasers. In some shorter range applications they may even be utilized directly as the sources.

  15. Radiation effects in technologies of semiconductor materials and devises

    International Nuclear Information System (INIS)

    Korshunov, F.P.; Bogatyrev, Yu.V.; Lastovskij, S.B.; Marchenko, I.G.; Zhdanovich, N.E.

    2003-01-01

    In the paper were considered the physical basics and practical results of using of penetrating radiations in technologies of nuclear transmutation of semiconductor materials (Si, GaAs) as well as in production of semiconductor devices including high-power silicon diodes, thyristors and transistors. It is shown the high efficiency of radiation technology for increasing of electronic device speed, exclusion of technological operations such as gold or platinum diffusions, increase of quality, decrease of prime cost and increase of good-to-bad device ratio yield

  16. Semiconductor processing apparatus with compact free radical source

    NARCIS (Netherlands)

    Kovalgin, Alexeij Y.; Aarnink, Antonius A.I.

    2013-01-01

    A semiconductor processing apparatus (1), comprising: a substrate processing chamber (158), defining a substrate support location (156) at which a generally planar semiconductor substrate (300) is supportable; and at least one free radical source (200), including: a precursor gas source (250); an

  17. FY 1999 achievement report on the project on the R and D of university-cooperation industrial science technology. Semiconductor device production process by Cat-CVD method (Semiconductor device production process by Cat-CVD method); 1999 nendo Cat-CVD ho ni yoru handotai device seizo process seika hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the results obtained by FY 1999 of the semiconductor device production using the catalytic chemical vapor deposition method. As to the thermal fluid simulation modeling in the thermal insulation thin film formation process, elucidated were the decomposition rate (40%) of SiH{sub 4} gas on catalyst body and the gas use efficiency (60% in two collisions with catalyst body). The range where the gas flow has effects was made clear. In researches on the substrate temperature control and catalyst body structure, thermal radiation effects from catalyst body were evaluated, which led to a success in high-speed deposition of high-quality a-Si. Concerning the optical monitor technology in film deposition, the identification of decomposition species (Si, etc.) and temperature of decomposition species could be made clear. Effects of pollutant removal were also monitored. Relating to the basic technology for thermal insulation thin film formation, conditions for Si nitride film formation were made clear, and stoichiometric composition films of Si{sub 3}N{sub 4} were acquired at low temperature of 300 degrees C. Also acquired were high etching resistant/high wetting resistant films. As to the ultra-high purity thin film formation, it was successful to find out the metal pollution resource and remove it. In regard to the Cat-CVD application on to metal oxide ferroelectric substances, low temperature Si{sub 3}N{sub 4} films could be formed at deposition speed of 20nm/min. by making the temperature condition (200 degrees C or less) clear and controlling the substrate temperature. (NEDO)

  18. Semiconductor technology for reducing emissions and increasing efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Duffin, B.; Frank, R. [Motorola Semiconductor Products Sector, Phoenix, AZ (United States)

    1997-12-31

    The cooperation and support of all industries are required to significantly impact a worldwide reduction in gaseous emissions that may contribute to climate change. Each industry also is striving to more efficiently utilize the resources that it consumes since this is both conservation for good citizenship and an intelligent approach to business. The semiconductor industry is also extremely concerned with these issues. However, semiconductor manufacturer`s products provide solutions for reduced emissions and increased efficiency in their industry, other industries and areas that can realize significant improvements through control technology. This paper will focus on semiconductor technologies of digital control, power switching and sensing to improve efficiency and reduce emissions in automotive, industrial, and office/home applications. 10 refs., 13 figs.

  19. Basic processes and scintillator and semiconductor detectors

    International Nuclear Information System (INIS)

    Bourgeois, C.

    1994-01-01

    In the following course, the interaction of heavy charged particles, electrons and Γ with matter is represented. Two types of detectors are studied, organic and inorganic scintillators and semiconductors. The signal formation is analysed. (author). 13 refs., 48 figs., 5 tabs

  20. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Semiconductor device manufacturing processes using Cat-CVD method); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (Cat-CVD ho ni yoru handotai device seizo process)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. The present project is composed of the basic research and development theme and the demonstrative research and development theme for the Cat-CVD method. This report summarizes the achievements in fiscal 2000 centering on the former theme. Discussions were given on the following five areas: 1) simulation on film thickness distribution in the Cat-CVD method, 2) life extension by preventing the catalyst converting into silicide and development of a catalyst integrated shear head, 3) vapor diagnosis in the film forming process by the Cat-CVD method using silane, hydrogen and ammonia, 4) a technology for high-speed deposition of hydrogenated amorphous silicon films for solar cells using the Cat-CVD method, and the low-temperature silicon oxide nitriding technology using heated catalysts, and 5) discussions on compatibility of transparent oxide electrode materials to the process of manufacturing thin-film silicon-based solar cells by using the Cat-CVD method. (NEDO)

  1. Optical cavity furnace for semiconductor wafer processing

    Science.gov (United States)

    Sopori, Bhushan L.

    2014-08-05

    An optical cavity furnace 10 having multiple optical energy sources 12 associated with an optical cavity 18 of the furnace. The multiple optical energy sources 12 may be lamps or other devices suitable for producing an appropriate level of optical energy. The optical cavity furnace 10 may also include one or more reflectors 14 and one or more walls 16 associated with the optical energy sources 12 such that the reflectors 14 and walls 16 define the optical cavity 18. The walls 16 may have any desired configuration or shape to enhance operation of the furnace as an optical cavity 18. The optical energy sources 12 may be positioned at any location with respect to the reflectors 14 and walls defining the optical cavity. The optical cavity furnace 10 may further include a semiconductor wafer transport system 22 for transporting one or more semiconductor wafers 20 through the optical cavity.

  2. Applying Physics: Opportunities in Semiconductor Technology Companies

    Science.gov (United States)

    Redinbo, Greg

    2011-03-01

    While many physicists practice in university settings, physics skills can also be applied outside the traditional academic track. ~Identifying these opportunities requires a clear understanding of how your physics training can be used in an industrial setting, understanding what challenges technology companies face, and identifying how your problem solving skills can be broadly applied in technology companies. ~In this talk I will highlight the common features of such companies, discuss what specific skills are useful for an industrial physicist, and explain roles (possibly unfamiliar) that may be available to you.

  3. Microwave plasma emerging technologies for chemical processes

    NARCIS (Netherlands)

    de la Fuente, Javier F.; Kiss, Anton A.; Radoiu, Marilena T.; Stefanidis, Georgios D.

    2017-01-01

    Microwave plasma (MWP) technology is currently being used in application fields such as semiconductor and material processing, diamond film deposition and waste remediation. Specific advantages of the technology include the enablement of a high energy density source and a highly reactive medium,

  4. New technology for the control of narrow-gap semiconductors

    International Nuclear Information System (INIS)

    Antoniou, I.; Bozhevolnov, V.; Melnikov, Yu.; Yafyasov, A.

    2003-01-01

    We present the results of the year work in the frame of the EU ESPRIT Project 28890 NTCONGS 'New technology for the control of narrow-gap semiconductors'. This work has involved both theoretical and experimental study, as well as the development of new specific equipment, towards the creation of a new generation of nanoelectronic devices able to operate at 77 K and even at room temperature

  5. Semiconductor radiation detectors technology and applications

    CERN Document Server

    2018-01-01

    The aim of this book is to educate the reader on radiation detectors, from sensor to read-out electronics to application. Relatively new detector materials, such as CdZTe and Cr compensated GaAs, are introduced, along with emerging applications of radiation detectors. This X-ray technology has practical applications in medical, industrial, and security applications. It identifies materials based on their molecular composition, not densities as the traditional transmission equipment does. With chapters written by an international selection of authors from both academia and industry, the book covers a wide range of topics on radiation detectors, which will satisfy the needs of both beginners and experts in the field.

  6. Thermal Management of Power Semiconductor Packages - Matching Cooling Technologies with Packaging Technologies (Presentation)

    Energy Technology Data Exchange (ETDEWEB)

    Bennion, K.; Moreno, G.

    2010-04-27

    Heat removal for power semiconductor devices is critical for robust operation. Because there are different packaging options, different thermal management technologies, and a range of applications, there is a need for a methodology to match cooling technologies and package configurations to target applications. To meet this need, a methodology was developed to compare the sensitivity of cooling technologies on the overall package thermal performance over a range of power semiconductor packaging configurations. The results provide insight into the trade-offs associated with cooling technologies and package configurations. The approach provides a method for comparing new developments in power semiconductor packages and identifying potential thermal control technologies for the package. The results can help users select the appropriate combination of packaging configuration and cooling technology for the desired application.

  7. Rare resource supply crisis and solution technology for semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

    2016-03-01

    There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

  8. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1984-01-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technology or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented. (author)

  9. Radionuclide methods in semiconductor technology. I

    International Nuclear Information System (INIS)

    Stverak, B.; Kopejtko, J.; Janu, M.

    1977-01-01

    The effects were studied of gold coating (by wetting, dropping and vacuum coating) the surface of silicon plates, the effect of wetting time and drying time on the homogeneity and amount of gold in the thus formed diffusion source. The tracer method was used with 198 Au in form of aqueous solutions of chloroauric acid. The solutions were deposited on the surface of the plate, then dried, the plate rinsed with distilled water and wetted in a KCN solution or in aqua regia. Some plates were then used in the process of thermal diffusion. The method of contact autoradiography was used for the determination of the homogeneity of gold, the amount of gold was determined radiometrically. The duration of wetting was 1, 2, 4, 16 and 32 minutes for two different concentrations of chloroauric acid, the duration of drying was 1, 2.5, 4 and 20 hours. It was ascertained that all gold in its reduced metallic form deposited on the surface could by rinsing in the KCN solution be quantitatively transferred into the solution. Rinsing in aqua regia gave the same results. In depositing gold in form of aqueous solutions of chloroauric acid it was ascertained that regardless of the concentration of gold in the wetting solution the amount of gold insoluble in water stabilized on the surface within approximately 5 minutes. The amount of reduced gold increased (owing to the continuing hydrolysis in the liquid phase) with the increasing drying time of the aqueous solution of chloroauric acid. Gold coating from the liquid phase be it by wetting or by dropping yielded a significantly nonhomogeneous surface layer of deposited gold provided the said solutions of chloroauric acid were used. Considerable differences were ascertained in the surface density of gold between places where the solution had dried and places where it had not remained. Homogeneity significantly improved after rinsing. Following thermal diffusion, 0.8-5% of the total gold content was diffused into the silicon plates. The

  10. Thermoreflectance spectroscopy—Analysis of thermal processes in semiconductor lasers

    Science.gov (United States)

    Pierścińska, D.

    2018-01-01

    This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Thermoreflectance is a thermometric technique based on measuring of relative change of reflectivity of the surface of laser facet, which provides thermal images useful in hot spot detection and reliability studies. In this paper, principles and experimental implementation of the technique as a thermography tool is discussed. Some exemplary applications of TR to various types of lasers are presented, proving that thermoreflectance technique provides new insight into heat management problems in semiconductor lasers and in particular, that it allows studying thermal degradation processes occurring at laser facets. Additionally, thermal processes and basic mechanisms of degradation of the semiconductor laser are discussed.

  11. 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

    CERN Document Server

    Li, Simon

    2012-01-01

    Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD.  This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D.  It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations.  Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc. Provides a vivid, internal view of semiconductor devices, through 3D TCAD simulation; Includes comprehensive coverage of  TCAD simulations for both optic and electronic devices, from nano-scale to high-voltage high-power devices; Presents material in a hands-on, tutorial fashion so that industry practitioners will find maximum utility; Includes a comprehensive library of devices, re...

  12. Radiation effects in semiconductors: technologies for hardened integrated circuits

    International Nuclear Information System (INIS)

    Charlot, J.M.

    1983-09-01

    Various technologies are used to manufacture integrated circuits for electronic systems. But for specific applications, including those with radiation environment, it is necessary to choose an appropriate technologie or to improve a specific one in order to reach a definite hardening level. The aim of this paper is to present the main effects induced by radiation (neutrons and gamma rays) into the basic semiconductor devices, to explain some physical degradation mechanisms and to propose solutions for hardened integrated circuit fabrication. The analysis involves essentially the monolithic structure of the integrated circuits and the isolation technology of active elements. In conclusion, the advantages of EPIC and SOS technologies are described and the potentialities of new technologies (GaAs and SOI) are presented

  13. Semiconductor measurement technology: reliability technology for cardiac pacemakers 2: a workshop report, 1976

    International Nuclear Information System (INIS)

    Schafft, H.A.

    1977-01-01

    Summaries are presented of 12 invited talks on the following topics: the procurement and assurance of high reliability electronic parts, leak rate and moisture measurements, pacemaker batteries, and pacemaker leads. The workshop, second in a series, was held in response to strong interest expressed by the pacemaker community to address technical questions relevant to the enhancement and assurance of cardiac pacemaker reliability. Discussed at the workshop were a process validation wafer concept for assuring process uniformity in device chips; screen tests for assuring reliable electronic parts; reliability prediction; reliability comparison of semiconductor technologies; mechanisms of short-circuiting dendritic growths; details of helium and radioisotope leak test methods; a study to correlate package leak rates, as measured with test gasses, and actual moisture infusion; battery life prediction; microcalorimetric measurements to nondestructively evaluate batteries for pacemakers; and an engineer's and a physician's view of the present status of pacemaker leads. References are included with most of the reports

  14. Origin of poor doping efficiency in solution processed organic semiconductors.

    Science.gov (United States)

    Jha, Ajay; Duan, Hong-Guang; Tiwari, Vandana; Thorwart, Michael; Miller, R J Dwayne

    2018-05-21

    Doping is an extremely important process where intentional insertion of impurities in semiconductors controls their electronic properties. In organic semiconductors, one of the convenient, but inefficient, ways of doping is the spin casting of a precursor mixture of components in solution, followed by solvent evaporation. Active control over this process holds the key to significant improvements over current poor doping efficiencies. Yet, an optimized control can only come from a detailed understanding of electronic interactions responsible for the low doping efficiencies. Here, we use two-dimensional nonlinear optical spectroscopy to examine these interactions in the course of the doping process by probing the solution mixture of doped organic semiconductors. A dopant accepts an electron from the semiconductor and the two ions form a duplex of interacting charges known as ion-pair complexes. Well-resolved off-diagonal peaks in the two-dimensional spectra clearly demonstrate the electronic connectivity among the ions in solution. This electronic interaction represents a well resolved electrostatically bound state, as opposed to a random distribution of ions. We developed a theoretical model to recover the experimental data, which reveals an unexpectedly strong electronic coupling of ∼250 cm -1 with an intermolecular distance of ∼4.5 Å between ions in solution, which is approximately the expected distance in processed films. The fact that this relationship persists from solution to the processed film gives direct evidence that Coulomb interactions are retained from the precursor solution to the processed films. This memory effect renders the charge carriers equally bound also in the film and, hence, results in poor doping efficiencies. This new insight will help pave the way towards rational tailoring of the electronic interactions to improve doping efficiencies in processed organic semiconductor thin films.

  15. Industrial science and technology research and development project of university cooperative type in fiscal 2000. Report on achievements in semiconductor device manufacturing processes using Cat-CVD method (Development of technology to rationalize energy usage); 2000 nendo daigaku renkeigata sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika gijutsu kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The catalytic chemical vapor deposition (Cat-CVD) method is a low-temperature thin film depositing technology that can achieve improvement in quality of semiconductor thin films and can perform inexpensive film deposition in a large area. This paper summarizes the achievements in fiscal 2000 in the demonstrative research and development theme of the present project, centering on the following five areas: 1) discussions on application of the Cat-CVD method to the mass production process for gallium arsenide integrated circuits, 2) studies on the possibility to apply the Cat-CVD method to the process to fabricate nitrided silicon protective film for ferroelectric memory devices, 3) formation of nitrided silicon films for silicon integrated circuits by means of the Cat-CVD method, and development of a chamber cleaning technology, 4) fabrication of high-mobility poly-crystalline silicon thin film transistors formed by using the Cat-CVD method and large particle size poly-crystalline silicon films by using the catalytic chemical sputtering process, and 5) discussions on properties of amorphous silicon thin film transistors formed by using the Cat-CVD method and formation of large area films by using a catalyst integrated shower head. (NEDO)

  16. Flexible distributed architecture for semiconductor process control and experimentation

    Science.gov (United States)

    Gower, Aaron E.; Boning, Duane S.; McIlrath, Michael B.

    1997-01-01

    Semiconductor fabrication requires an increasingly expensive and integrated set of tightly controlled processes, driving the need for a fabrication facility with fully computerized, networked processing equipment. We describe an integrated, open system architecture enabling distributed experimentation and process control for plasma etching. The system was developed at MIT's Microsystems Technology Laboratories and employs in-situ CCD interferometry based analysis in the sensor-feedback control of an Applied Materials Precision 5000 Plasma Etcher (AME5000). Our system supports accelerated, advanced research involving feedback control algorithms, and includes a distributed interface that utilizes the internet to make these fabrication capabilities available to remote users. The system architecture is both distributed and modular: specific implementation of any one task does not restrict the implementation of another. The low level architectural components include a host controller that communicates with the AME5000 equipment via SECS-II, and a host controller for the acquisition and analysis of the CCD sensor images. A cell controller (CC) manages communications between these equipment and sensor controllers. The CC is also responsible for process control decisions; algorithmic controllers may be integrated locally or via remote communications. Finally, a system server images connections from internet/intranet (web) based clients and uses a direct link with the CC to access the system. Each component communicates via a predefined set of TCP/IP socket based messages. This flexible architecture makes integration easier and more robust, and enables separate software components to run on the same or different computers independent of hardware or software platform.

  17. Surface passivation technology for III-V semiconductor nanoelectronics

    International Nuclear Information System (INIS)

    Hasegawa, Hideki; Akazawa, Masamichi

    2008-01-01

    The present status and key issues of surface passivation technology for III-V surfaces are discussed in view of applications to emerging novel III-V nanoelectronics. First, necessities of passivation and currently available surface passivation technologies for GaAs, InGaAs and AlGaAs are reviewed. Then, the principle of the Si interface control layer (ICL)-based passivation scheme by the authors' group is introduced and its basic characterization is presented. Ths Si ICL is a molecular beam epitaxy (MBE)-grown ultrathin Si layer inserted between III-V semiconductor and passivation dielectric. Finally, applications of the Si ICL method to passivation of GaAs nanowires and GaAs nanowire transistors and to realization of pinning-free high-k dielectric/GaAs MOS gate stacks are presented

  18. Fundamental atomic plasma chemistry for semiconductor manufacturing process analysis

    International Nuclear Information System (INIS)

    Ventzek, P.L.G.; Zhang, D.; Stout, P.J.; Rauf, S.; Orlowski, M.; Kudrya, V.; Astapenko, V.; Eletskii, A.

    2002-01-01

    An absence of fundamental atomic plasma chemistry data (e.g. electron impact cross-sections) hinders the application of plasma process models in semiconductor manufacturing. Of particular importance is excited state plasma chemistry data for metallization applications. This paper describes important plasma chemistry processes in the context of high density plasmas for metallization application and methods for the calculation of data for the study of these processes. Also discussed is the development of model data sets that address computational tractability issues. Examples of model electron impact cross-sections for Ni reduced from multiple collision processes are presented

  19. Mineral Processing Technology Roadmap

    Energy Technology Data Exchange (ETDEWEB)

    none,

    2000-09-01

    This document represents the roadmap for Processing Technology Research in the US Mining Industry. It was developed based on the results of a Processing Technology Roadmap Workshop sponsored by the National Mining Association in conjunction with the US Department of Energy, Office of Energy Efficiency and Renewable Energy, Office of Industrial Technologies. The Workshop was held January 24 - 25, 2000.

  20. TXRF applications for semiconductor materials and process characterization

    International Nuclear Information System (INIS)

    Zaitz, M.A.

    2000-01-01

    In the past 30 years, the semiconductor industry has undergone a dramatic evolution in technology which now has become part of our daily lives. The density of transistors on a chip has grown exponentially, approximately doubling every 18 months or increasing 3200 times. Early chips from the 1970's had about 2300 components on them compared to 7.5 million on today's sophisticated microprocessors. It is an exhausting pace with no let up in sight. Traditional materials are no longer keeping pace. Smaller and smaller circuits require alternative materials and processes. New materials such as high k and low k dielectric are being evaluated to replace silicon dioxide both as a gate material and as an insulator. Copper wiring which has less resistance thereby increasing signal speed is well into manufacturing. Other technologies such as SOI (silicon on insulator) are good candidates to win the battle of speed and performance. To keep this pace of phenomenal creativity going, material characterization and process development needs novel and innovative techniques. The versatility of total reflection x-ray florescence (TXRF) makes it an ideal analytical instrument for research and development studies for ultra trace metal analysis. TXRF can easily measure the surfaces of thin metallic films, but also both low and high K dielectric materials for ultra trace contamination levels. The multiple element capability provides accurate quantitative data over a wide range of elements. Nontraditional elements such as argon which is easily trapped in films during the sputter deposition process are easily detected by TXRF. Advances in light element; Al, Na, Mg, are providing information that was very difficult and time consuming to obtain by other analytical techniques. TXRF analysis on wafers show aluminum contamination patterns from a brush clean study and an ion implanted, shallow doped study. The silicon wafer is the perfect carrier for a TXRF analysis- smooth and highly polished for

  1. Characterization of semiconductor and frontier materials by nuclear microprobe technology

    International Nuclear Information System (INIS)

    Zhu Jieqing; Li Xiaolin; Yang Changyi; Lu Rongrong; Wang Jiqing; Guo Panlin

    2002-01-01

    The nuclear microprobe technology is used to characterize the properties of semiconductor and other frontier materials at the stages of their synthesis, modification, integration and application. On the basis of the beam current being used, the analytical nuclear microprobe techniques being used in this project can be divided into two categories: high beam current (PIXE, RBS, PEB) or low beam current (IBIC, STIM) techniques. The material properties measured are the thickness and composition of a composite surface on a SiC ceramic, the sputtering-induced surface segregation and depth profile change in a Ag-Cu binary alloy, the irradiation effects on the CCE of CVD diamond, the CCE profile at a polycrystalline CVD diamond film and a GaAs diode at different voltage biases and finally, the characterization of individual sample on an integrated material chip. (author)

  2. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  3. Measuring processes with opto-electronic semiconductor components

    International Nuclear Information System (INIS)

    1985-01-01

    This is a report on the state of commercially available semiconductor emitters and detectors for the visible, near, middle and remote infrared range. A survey is given on the distance, speed, flow and length measuring techniques using opto-electronic components. Automatic focussing, the use of light barriers, non-contact temperature measurements, spectroscopic gas, liquid and environmental measurement techniques and gas analysis in medical techniques show further applications of the new components. The modern concept of guided radiation in optical fibres and their use in system technology is briefly explained. (DG) [de

  4. Engineering charge transport by heterostructuring solution-processed semiconductors

    Science.gov (United States)

    Voznyy, Oleksandr; Sutherland, Brandon R.; Ip, Alexander H.; Zhitomirsky, David; Sargent, Edward H.

    2017-06-01

    Solution-processed semiconductor devices are increasingly exploiting heterostructuring — an approach in which two or more materials with different energy landscapes are integrated into a composite system. Heterostructured materials offer an additional degree of freedom to control charge transport and recombination for more efficient optoelectronic devices. By exploiting energetic asymmetry, rationally engineered heterostructured materials can overcome weaknesses, augment strengths and introduce emergent physical phenomena that are otherwise inaccessible to single-material systems. These systems see benefit and application in two distinct branches of charge-carrier manipulation. First, they influence the balance between excitons and free charges to enhance electron extraction in solar cells and photodetectors. Second, they promote radiative recombination by spatially confining electrons and holes, which increases the quantum efficiency of light-emitting diodes. In this Review, we discuss advances in the design and composition of heterostructured materials, consider their implementation in semiconductor devices and examine unexplored paths for future advancement in the field.

  5. Evolutionary process development towards next generation crystalline silicon solar cells : a semiconductor process toolbox application

    Directory of Open Access Journals (Sweden)

    Tous L.

    2012-08-01

    Full Text Available Bulk crystalline Silicon solar cells are covering more than 85% of the world’s roof top module installation in 2010. With a growth rate of over 30% in the last 10 years this technology remains the working horse of solar cell industry. The full Aluminum back-side field (Al BSF technology has been developed in the 90’s and provides a production learning curve on module price of constant 20% in average. The main reason for the decrease of module prices with increasing production capacity is due to the effect of up scaling industrial production. For further decreasing of the price per wattpeak silicon consumption has to be reduced and efficiency has to be improved. In this paper we describe a successive efficiency improving process development starting from the existing full Al BSF cell concept. We propose an evolutionary development includes all parts of the solar cell process: optical enhancement (texturing, polishing, anti-reflection coating, junction formation and contacting. Novel processes are benchmarked on industrial like baseline flows using high-efficiency cell concepts like i-PERC (Passivated Emitter and Rear Cell. While the full Al BSF crystalline silicon solar cell technology provides efficiencies of up to 18% (on cz-Si in production, we are achieving up to 19.4% conversion efficiency for industrial fabricated, large area solar cells with copper based front side metallization and local Al BSF applying the semiconductor toolbox.

  6. Simulation of the selective oxidation process of semiconductors

    International Nuclear Information System (INIS)

    Chahoud, M.

    2012-01-01

    A new approach to simulate the selective oxidation of semiconductors is presented. This approach is based on the so-called b lack box simulation method . This method is usually used to simulate complex processes. The chemical and physical details within the process are not considered. Only the input and output data of the process are relevant for the simulation. A virtual function linking the input and output data has to be found. In the case of selective oxidation the input data are the mask geometry and the oxidation duration whereas the output data are the oxidation thickness distribution. The virtual function is determined as four virtual diffusion processes between the masked und non-masked areas. Each process delivers one part of the oxidation profile. The method is applied successfully on the oxidation system silicon-silicon nitride (Si-Si 3 N 4 ). The fitting parameters are determined through comparison of experimental and simulation results two-dimensionally.(author)

  7. Surface passivation process of compound semiconductor material using UV photosulfidation

    Science.gov (United States)

    Ashby, Carol I. H.

    1995-01-01

    A method for passivating compound semiconductor surfaces by photolytically disrupting molecular sulfur vapor with ultraviolet radiation to form reactive sulfur which then reacts with and passivates the surface of compound semiconductors.

  8. Particle processing technology

    Science.gov (United States)

    Sakka, Yoshio

    2014-02-01

    In recent years, there has been strong demand for the development of novel devices and equipment that support advanced industries including IT/semiconductors, the environment, energy and aerospace along with the achievement of higher efficiency and reduced environmental impact. Many studies have been conducted on the fabrication of innovative inorganic materials with novel individual properties and/or multifunctional properties including electrical, dielectric, thermal, optical, chemical and mechanical properties through the development of particle processing. The fundamental technologies that are key to realizing such materials are (i) the synthesis of nanoparticles with uniform composition and controlled crystallite size, (ii) the arrangement/assembly and controlled dispersion of nanoparticles with controlled particle size, (iii) the precise structural control at all levels from micrometer to nanometer order and (iv) the nanostructural design based on theoretical/experimental studies of the correlation between the local structure and the functions of interest. In particular, it is now understood that the application of an external stimulus, such as magnetic energy, electrical energy and/or stress, to a reaction field is effective in realizing advanced particle processing [1-3]. This special issue comprises 12 papers including three review papers. Among them, seven papers are concerned with phosphor particles, such as silicon, metals, Si3N4-related nitrides, rare-earth oxides, garnet oxides, rare-earth sulfur oxides and rare-earth hydroxides. In these papers, the effects of particle size, morphology, dispersion, surface states, dopant concentration and other factors on the optical properties of phosphor particles and their applications are discussed. These nanoparticles are classified as zero-dimensional materials. Carbon nanotubes (CNT) and graphene are well-known one-dimensional (1D) and two-dimensional (2D) materials, respectively. This special issue also

  9. Advanced excimer laser technologies enable green semiconductor manufacturing

    Science.gov (United States)

    Fukuda, Hitomi; Yoo, Youngsun; Minegishi, Yuji; Hisanaga, Naoto; Enami, Tatsuo

    2014-03-01

    "Green" has fast become an important and pervasive topic throughout many industries worldwide. Many companies, especially in the manufacturing industries, have taken steps to integrate green initiatives into their high-level corporate strategies. Governments have also been active in implementing various initiatives designed to increase corporate responsibility and accountability towards environmental issues. In the semiconductor manufacturing industry, there are growing concerns over future environmental impact as enormous fabs expand and new generation of equipments become larger and more powerful. To address these concerns, Gigaphoton has implemented various green initiatives for many years under the EcoPhoton™ program. The objective of this program is to drive innovations in technology and services that enable manufacturers to significantly reduce both the financial and environmental "green cost" of laser operations in high-volume manufacturing environment (HVM) - primarily focusing on electricity, gas and heat management costs. One example of such innovation is Gigaphoton's Injection-Lock system, which reduces electricity and gas utilization costs of the laser by up to 50%. Furthermore, to support the industry's transition from 300mm to the next generation 450mm wafers, technologies are being developed to create lasers that offer double the output power from 60W to 120W, but reducing electricity and gas consumption by another 50%. This means that the efficiency of lasers can be improve by up to 4 times in 450mm wafer production environments. Other future innovations include the introduction of totally Heliumfree Excimer lasers that utilize Nitrogen gas as its replacement for optical module purging. This paper discusses these and other innovations by Gigaphoton to enable green manufacturing.

  10. Technology or Process First?

    DEFF Research Database (Denmark)

    Siurdyban, Artur Henryk; Svejvig, Per; Møller, Charles

    Enterprise Systems Management (ESM) and Business Pro- cess Management (BPM), although highly correlated, have evolved as alternative and mutually exclusive approaches to corporate infrastruc- ture. As a result, companies struggle to nd the right balance between technology and process factors...... in infrastructure implementation projects. The purpose of this paper is articulate a need and a direction to medi- ate between the process-driven and the technology-driven approaches. Using a cross-case analysis, we gain insight into two examples of sys- tems and process implementation. We highlight the dierences...... between them using strategic alignment, Enterprise Systems and Business Process Management theories. We argue that the insights from these cases can lead to a better alignment between process and technology. Implications for practice include the direction towards a closer integration of process...

  11. Desalination processes and technologies

    International Nuclear Information System (INIS)

    Furukawa, D.H.

    1996-01-01

    Reasons of the development of desalination processes, the modern desalination technologies, such as multi-stage flash evaporation, multi-effect distillation, reverse osmosis, and the prospects of using nuclear power for desalination purposes are discussed. 9 refs

  12. Microeconomics of yield learning and process control in semiconductor manufacturing

    Science.gov (United States)

    Monahan, Kevin M.

    2003-06-01

    Simple microeconomic models that directly link yield learning to profitability in semiconductor manufacturing have been rare or non-existent. In this work, we review such a model and provide links to inspection capability and cost. Using a small number of input parameters, we explain current yield management practices in 200mm factories. The model is then used to extrapolate requirements for 300mm factories, including the impact of technology transitions to 130nm design rules and below. We show that the dramatic increase in value per wafer at the 300mm transition becomes a driver for increasing metrology and inspection capability and sampling. These analyses correlate well wtih actual factory data and often identify millions of dollars in potential cost savings. We demonstrate this using the example of grating-based overlay metrology for the 65nm node.

  13. Status and progress in ion implantation technology for semiconductor device manufacturing

    International Nuclear Information System (INIS)

    Takahashi, Noriyuki

    1998-01-01

    Rapid growth in implant applications in the fabrication of semiconductors has encouraged a dramatic increase in the range of energies, beam currents and ion species used. The challenges of a wider energy range, higher beam currents, continued reduction in contamination, improved angle integrity and larger substrates have motivated the development of many innovations. Advanced processes in submicron device production uses up to twenty implantation steps. Thus the outstanding growth of this industry has led to the evolution of a thriving business of hundreds of implantation equipment systems each year with very specific requirements. The present paper reviews the principal process requirements which resulted in the evolution of the equipment technology, and describes the recent trends in the ion implanter technology all three principal categories: high current, medium current and high energy. (author)

  14. Diagnosing modern semiconductor processes with the new generation of Atomika TXRF systems

    International Nuclear Information System (INIS)

    Dobler, M.; Jung, M.; Greithanner, S.

    2000-01-01

    Responding to the latest demands in semiconductor process technology, ATOMIKA Instruments has developed a new TXRF surface analyzer generation TXRF 8300/8200W for wafer sizes up to 300 mm. This new tool set provides extended automation features for routine measurements in daily quality control as for unconventional demands in scientific work. The efficiency of the systems is illustrated and compared to the older TXRF 8030W generation. Measurement results gained on usual contaminated wafer surfaces as well as on new semiconductor material substrates are presented and prove the advantages of the improvements and novelties. The possibility to perform an analytical study at thin layers to determine layer thickness and density is demonstrated. A summary of the newest measurement results using these instruments and an outlook for further developments is given. (author)

  15. TECHNOLOGY MANAGEMENT PROCESS FRAMEWORK

    Directory of Open Access Journals (Sweden)

    Ikura Yamamoto

    2012-02-01

    Full Text Available The effective management of technology as a source of competitive advantage is of vital importance for many organizations. It is necessary to understand, communicate and integrate technology strategy with marketing, financial, operations and human resource strategies. This is of particular importance when one considers the increasing cost, pace and complexity of technology developments, combined with shortening product life cycles. A five process model provides a framework within which technology management activities can be understood: identification, selection, acquisition, exploitation and protection. Based on this model, a technology management assessment procedure has been developed, using an ``action research’’ approach. This paper presents an industrial case study describing the first full application of the procedure within a high-volume manufacturing business. The impact of applying the procedure is assessed in terms of benefits to the participating business, together with improvements to the assessment procedure itself, in the context of the action research framework. Keyword: Technology, Strategy, Management, Assessment

  16. Photon technology. Laser process technology; Photon technology. Laser process gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    For developing laser process technology by interaction between substance and photon, the present state, system, R and D issues and proposal of such technology were summarized. Development of the photon technology aims at the modification of bonding conditions of substances by quantum energy of photon, and the new process technology for generating ultra- high temperature and pressure fields by concentrating photon on a minute region. Photon technology contributes to not only the conventional mechanical and thermal forming and removal machining but also function added machining (photon machining) in quantum level and new machining technology ranging from macro- to micro-machining, creating a new industrial field. This technology extends various fields from the basis of physics and chemistry to new bonding technology. Development of a compact high-quality high-power high-efficiency photon source, and advanced photon transmission technology are necessary. The basic explication of an unsolved physicochemical phenomenon related to photon and substance, and development of related application technologies are essential. 328 refs., 147 figs., 13 tabs.

  17. Plasma Processing of Metallic and Semiconductor Thin Films in the Fisk Plasma Source

    Science.gov (United States)

    Lampkin, Gregory; Thomas, Edward, Jr.; Watson, Michael; Wallace, Kent; Chen, Henry; Burger, Arnold

    1998-01-01

    The use of plasmas to process materials has become widespread throughout the semiconductor industry. Plasmas are used to modify the morphology and chemistry of surfaces. We report on initial plasma processing experiments using the Fisk Plasma Source. Metallic and semiconductor thin films deposited on a silicon substrate have been exposed to argon plasmas. Results of microscopy and chemical analyses of processed materials are presented.

  18. Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

    Science.gov (United States)

    Biyikli, Necmi; Haider, Ali

    2017-09-01

    In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

  19. Metal semiconductor contacts and devices

    CERN Document Server

    Cohen, Simon S; Einspruch, Norman G

    1986-01-01

    VLSI Electronics Microstructure Science, Volume 13: Metal-Semiconductor Contacts and Devices presents the physics, technology, and applications of metal-semiconductor barriers in digital integrated circuits. The emphasis is placed on the interplay among the theory, processing, and characterization techniques in the development of practical metal-semiconductor contacts and devices.This volume contains chapters that are devoted to the discussion of the physics of metal-semiconductor interfaces and its basic phenomena; fabrication procedures; and interface characterization techniques, particularl

  20. Photon technology. Laser processing technology; Photon technology. Laser process gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    Survey has been conducted to develop laser processing technology utilizing the interaction between substance and photon. This is a part of the leading research on photon technology development. The photon technology development is aimed at novel technology development highly utilizing the quantum nature of photons. In the field of laser processing, high quality photons are used as tools, special functions of atoms and molecules will be discovered, and processing for functional fabrication (photon machining) will be established. A role of laser processing in industries has become significant, which is currently spreading not only into cutting and welding of materials and scalpels but also into such a special field as ultrafine processing of materials. The spreading is sometimes obstructed due to the difficulty of procurement of suitable machines and materials, and the increase of cost. The purpose of this study is to develop the optimal laser technology, to elucidate the interaction between substance and photon, and to develop the laser system and the transmission and regulation systems which realize the optimal conditions. 387 refs., 115 figs., 25 tabs.

  1. Proceedings of the Malaysian Science and Technology Congress `94: Vol. II - new products and processes

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1994-12-31

    New processes and products in the field of the Malaysian technology research were presented at the Science and Technology congress `94. Composite materials, semiconductors fabrication, optical fibers, zeolite properties etc. were discussed in 35 contributions.

  2. Proceedings of the Malaysian Science and Technology Congress '94: Vol. II - new products and processes

    International Nuclear Information System (INIS)

    1994-01-01

    New processes and products in the field of the Malaysian technology research were presented at the Science and Technology congress '94. Composite materials, semiconductors fabrication, optical fibers, zeolite properties etc. were discussed in 35 contributions

  3. Recent Advancements in Semiconductor-based Optical Signal Processing

    DEFF Research Database (Denmark)

    Nielsen, M L; Mørk, Jesper

    2006-01-01

    Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching.......Significant advancements in technology and basic understanding of device physics are bringing optical signal processing closer to a commercial breakthrough. In this paper we describe the main challenges in high-speed SOA-based switching....

  4. Evolution of Ion Implantation Technology and its Contribution to Semiconductor Industry

    International Nuclear Information System (INIS)

    Tsukamoto, Katsuhiro; Kuroi, Takashi; Kawasaki, Yoji

    2011-01-01

    Industrial aspects of the evolution of ion implantation technology will be reviewed, and their impact on the semiconductor industry will be discussed. The main topics will be the technology's application to the most advanced, ultra scaled CMOS, and to power devices, as well as productivity improvements in implantation technology. Technological insights into future developments in ion-related technologies for emerging industries will also be presented.

  5. VLSI signal processing technology

    CERN Document Server

    Swartzlander, Earl

    1994-01-01

    This book is the first in a set of forthcoming books focussed on state-of-the-art development in the VLSI Signal Processing area. It is a response to the tremendous research activities taking place in that field. These activities have been driven by two factors: the dramatic increase in demand for high speed signal processing, especially in consumer elec­ tronics, and the evolving microelectronic technologies. The available technology has always been one of the main factors in determining al­ gorithms, architectures, and design strategies to be followed. With every new technology, signal processing systems go through many changes in concepts, design methods, and implementation. The goal of this book is to introduce the reader to the main features of VLSI Signal Processing and the ongoing developments in this area. The focus of this book is on: • Current developments in Digital Signal Processing (DSP) pro­ cessors and architectures - several examples and case studies of existing DSP chips are discussed in...

  6. Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate

    Science.gov (United States)

    McKee, Rodney A.; Walker, Frederick J.; Chisholm, Matthew F.

    2000-01-01

    A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.

  7. Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

    Science.gov (United States)

    Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

    2016-01-01

    Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

  8. Vaccine process technology.

    Science.gov (United States)

    Josefsberg, Jessica O; Buckland, Barry

    2012-06-01

    The evolution of vaccines (e.g., live attenuated, recombinant) and vaccine production methods (e.g., in ovo, cell culture) are intimately tied to each other. As vaccine technology has advanced, the methods to produce the vaccine have advanced and new vaccine opportunities have been created. These technologies will continue to evolve as we strive for safer and more immunogenic vaccines and as our understanding of biology improves. The evolution of vaccine process technology has occurred in parallel to the remarkable growth in the development of therapeutic proteins as products; therefore, recent vaccine innovations can leverage the progress made in the broader biotechnology industry. Numerous important legacy vaccines are still in use today despite their traditional manufacturing processes, with further development focusing on improving stability (e.g., novel excipients) and updating formulation (e.g., combination vaccines) and delivery methods (e.g., skin patches). Modern vaccine development is currently exploiting a wide array of novel technologies to create safer and more efficacious vaccines including: viral vectors produced in animal cells, virus-like particles produced in yeast or insect cells, polysaccharide conjugation to carrier proteins, DNA plasmids produced in E. coli, and therapeutic cancer vaccines created by in vitro activation of patient leukocytes. Purification advances (e.g., membrane adsorption, precipitation) are increasing efficiency, while innovative analytical methods (e.g., microsphere-based multiplex assays, RNA microarrays) are improving process understanding. Novel adjuvants such as monophosphoryl lipid A, which acts on antigen presenting cell toll-like receptors, are expanding the previously conservative list of widely accepted vaccine adjuvants. As in other areas of biotechnology, process characterization by sophisticated analysis is critical not only to improve yields, but also to determine the final product quality. From a regulatory

  9. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  10. The way to zeros: The future of semiconductor device and chemical mechanical polishing technologies

    Science.gov (United States)

    Tsujimura, Manabu

    2016-06-01

    For the last 60 years, the development of cutting-edge semiconductor devices has strongly emphasized scaling; the effort to scale down current CMOS devices may well achieve the target of 5 nm nodes by 2020. Planarization by chemical mechanical polishing (CMP), is one technology essential for supporting scaling. This paper summarizes the history of CMP transitions in the planarization process as well as the changing degree of planarity required, and, finally, introduces innovative technologies to meet the requirements. The use of CMP was triggered by the replacement of local oxidation of silicon (LOCOS) as the element isolation technology by shallow trench isolation (STI) in the 1980s. Then, CMP’s use expanded to improving embedability of aluminum wiring, tungsten (W) contacts, Cu wiring, and, more recently, to its adoption in high-k metal gate (HKMG) and FinFET (FF) processes. Initially, the required degree of planarity was 50 nm, but now 0 nm is required. Further, zero defects on a post-CMP wafer is now the goal, and it is possible that zero psi CMP loading pressure will be required going forward. Soon, it seems, everything will have to be “zero” and perfect. Although the process is also chemical in nature, the CMP process is actually mechanical with a load added using slurry particles several tens of nm in diameter. Zero load in the loading process, zero nm planarity with no trace of processing, and zero residual foreign material, including the very slurry particles used in the process, are all required. This article will provide an overview of how to achieve these new requirements and what technologies should be employed.

  11. Radiation immune RAM semiconductor technology for the 80's. [Random Access Memory

    Science.gov (United States)

    Hanna, W. A.; Panagos, P.

    1983-01-01

    This paper presents current and short term future characteristics of RAM semiconductor technologies which were obtained by literature survey and discussions with cognizant Government and industry personnel. In particular, total ionizing dose tolerance and high energy particle susceptibility of the technologies are addressed. Technologies judged compatible with spacecraft applications are ranked to determine the best current and future technology for fast access (less than 60 ns), radiation tolerant RAM.

  12. Carrier-lifetime-controlled selective etching process for semiconductors using photochemical etching

    International Nuclear Information System (INIS)

    Ashby, C.I.H.; Myers, D.R.

    1992-01-01

    This patent describes a process for selectively photochemically etching a semiconductor material. It comprises introducing at least one impurity into at least one selected region of a semiconductor material to be etched to increase a local impurity concentration in the at least one selected region relative to an impurity concentration in regions of the semiconductor material adjacent thereto, for reducing minority carrier lifetimes within the at least one selected region relative to the adjacent regions for thereby providing a photochemical etch-inhibiting mask at the at least one selected region; and etching the semiconductor material by subjecting the surface of the semiconductor material to a carrier-driven photochemical etching reaction for selectively etching the regions of the semiconductor material adjacent the at least one selected region having the increase impurity concentration; wherein the step of introducing at least one impurity is performed so as not to produce damage to the at least one selected region before any etching is performed

  13. Image processing technology for nuclear facilities

    International Nuclear Information System (INIS)

    Lee, Jong Min; Lee, Yong Beom; Kim, Woong Ki; Park, Soon Young

    1993-05-01

    Digital image processing technique is being actively studied since microprocessors and semiconductor memory devices have been developed in 1960's. Now image processing board for personal computer as well as image processing system for workstation is developed and widely applied to medical science, military, remote inspection, and nuclear industry. Image processing technology which provides computer system with vision ability not only recognizes nonobvious information but processes large information and therefore this technique is applied to various fields like remote measurement, object recognition and decision in adverse environment, and analysis of X-ray penetration image in nuclear facilities. In this report, various applications of image processing to nuclear facilities are examined, and image processing techniques are also analysed with the view of proposing the ideas for future applications. (Author)

  14. Processing of semiconductors and thin film solar cells using electroplating

    Science.gov (United States)

    Madugu, Mohammad Lamido

    The global need for a clean, sustainable and affordable source of energy has triggered extensive research especially in renewable energy sources. In this sector, photovoltaic has been identified as a cheapest, clean and reliable source of energy. It would be of interest to obtain photovoltaic material in thin film form by using simple and inexpensive semiconductor growth technique such as electroplating. Using this growth technique, four semiconductor materials were electroplated on glass/fluorine-doped tin oxide (FTO) substrate from aqueous electrolytes. These semiconductors are indium selenide (In[x]Sey), zinc sulphide (ZnS), cadmium sulphide (CdS) and cadmium telluride (CdTe). In[x]Se[y] and ZnS were incorporated as buffer layers while CdS and CdTe layers were utilised as window and absorber layers respectively. All materials were grown using two-electrode (2E) system except for CdTe which was grown using 3E and 2E systems for comparison. To fully optimise the growth conditions, the as-deposited and annealed layers from all the materials were characterised for their structural, morphological, optical, electrical and defects structures using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), optical absorption (UV-Vis spectroscopy), photoelectrochemical (PEC) cell measurements, current-voltage (I-V), capacitance-voltage (C-V), DC electrical measurements, ultraviolet photoelectron spectroscopy (UPS) and photoluminescence (PL) techniques. Results show that InxSey and ZnS layers were amorphous in nature and exhibit both n-type and p-type in electrical conduction. CdS layers are n-type in electrical conduction and show hexagonal and cubic phases in both the as-deposited and after annealing process. CdTe layers show cubic phase structure with both n-type and p-type in electrical conduction. CdTe-based solar cell structures with a n-n heterojunction plus large Schottky barrier, as well as multi-layer graded

  15. Simulation and Performance Test Technology Development for Semiconductor Radiation Detection Instrument Fabrication

    International Nuclear Information System (INIS)

    Kim, Jong Kyung; Lee, W. G.; Kim, S. Y.; Shin, C. H.; Kim, K. O.; Park, J. M.; Jang, D. Y.; Kang, J. S.

    2010-06-01

    - Analysis on the Absorbed Dose and Electron Generation by Using MCNPX Code - Analysis on the Change of Measured Energy Spectrum As a Function of Bias Voltage Applied in Semiconductor Detector - Comparison of Monte Carlo Simulation Considering the Charge Collection Efficiency and Experimental Result - Development of Semiconductor Sensor Design Code Based on the Graphic User Interface - Analysis on Depth Profile of Ion-implanted Semiconductor Wafer Surface and Naturally Generated SiO2 Insulation Layer Using Auger Electron Spectroscopy - Measurement of AFM Images and Roughness to Abalyze Surface of Semiconductor Wafer with respect to Annealing and Cleaning Process - Measurement of Physical Properties for Semiconductor Detector Surface after CZT Passivation Process - Evaluation of Crystal Structure and Specific Resistance of CZT - Measurement/Analysis on Band Structure of CZT Crystal - Evaluation of Neutron Convertor Layer with respect to Change in Temperature - Measurement/Evaluation of physical characteristics for lattice parameter, specific resistance, and band structure of CZT crystal - Measurement/Evaluation of lattice transition of SiC semiconductor detector after radiation irradiation - Measurement/Evaluation of performance of semiconductor detector with respect to exposure in high temperature environment

  16. New era of silicon technologies due to radical reaction based semiconductor manufacturing

    International Nuclear Information System (INIS)

    Ohmi, Tadahiro; Hirayama, Masaki; Teramoto, Akinobu

    2006-01-01

    Current semiconductor technology, the so-called the molecule reaction based semiconductor manufacturing, now faces a very severe standstill due to the drastic increase of gate leakage currents and drain leakage currents. Radical reaction based semiconductor manufacturing has been developed to completely overcome the current standstill by introducing microwave excited high density plasma with very low electron temperatures and without accompanying charge-up damage. The introduction of radical reaction based semiconductor manufacturing has made it possible to fabricate LSI devices on any crystal orientation Si substrate surface as well as (100) Si substrate surfaces, and to eliminate a very severe limitation to the antenna ratio in the circuit layout patterns, which is strictly limited to less than 100-200 in order to obtain a relatively high production yield. (topical review)

  17. A process for doping an amorphous semiconductor material by ion implantation

    International Nuclear Information System (INIS)

    Kalbitzer, S.; Muller, G.; Spear, W.E.; Le Comber, P.G.

    1979-01-01

    In a process for doping a body of amorphous semiconductor material, the body is held at a predetermined temperature above 20 deg. C which is below the recrystallization temperature of the amorphous semiconductor material during bombardment by accelerated ions of a predetermined doping material. (U.K.)

  18. A Novel Semiconductor CIGS Photovoltaic Material and Thin-Film ED Technology

    Institute of Scientific and Technical Information of China (English)

    2001-01-01

    In order to achieve low-cost high-efficiency thin-film solar cells, a novel Semiconductor Photovoltaic (PV) active material CuIn1-xGaxSe2 (CIGS) and thin-film Electro-Deposition (ED) technology is explored. Firstly,the PV materials and technologies is investigated, then the detailed experimental processes of CIGS/Mo/glass structure by using the novel ED technology and the results are reported. These results shows that high quality CIGS polycrystalline thin-films can be obtained by the ED method, in which the polycrystalline CIGS is definitely identified by the (112), (204, 220) characteristic peaks of the tetragonal structure, the continuous CIGS thin-film layers with particle average size of about 2μm of length and around 1.6μm of thickness. The thickness and solargrade quality of CIGS thin-films can be produced with good repeatability. Discussion and analysis on the ED technique, CIGS energy band and sodium (Na) impurity properties, were also performed. The alloy CIGS exhibits not only increasing band-gap with increasing x, but also a change in material properties that is relevant to the device operation. The beneficial impurity Na originating from the low-cost soda-lime glass substrate becomes one prerequisite for high quality CIGS films. These novel material and technology are very useful for low-cost high-efficiency thin-film solar cells and other devices.

  19. Semiconductor technology in protein kinase research and drug discovery: sensing a revolution.

    Science.gov (United States)

    Bhalla, Nikhil; Di Lorenzo, Mirella; Estrela, Pedro; Pula, Giordano

    2017-02-01

    Since the discovery of protein kinase activity in 1954, close to 600 kinases have been discovered that have crucial roles in cell physiology. In several pathological conditions, aberrant protein kinase activity leads to abnormal cell and tissue physiology. Therefore, protein kinase inhibitors are investigated as potential treatments for several diseases, including dementia, diabetes, cancer and autoimmune and cardiovascular disease. Modern semiconductor technology has recently been applied to accelerate the discovery of novel protein kinase inhibitors that could become the standard-of-care drugs of tomorrow. Here, we describe current techniques and novel applications of semiconductor technologies in protein kinase inhibitor drug discovery. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. Fiscal 1998 joint R and D project on industrial science and technology with university. Research report on the production process of semiconductor devices by Cat-CVD (Development of practical technology for rational use of energy); 1998 nendo daigaku renkei sangyo kagaku gijutsu kenkyu kaihatsu project. Cat-CVD ho ni yoru handotai device seizo process seika hokokusho (energy shiyo gorika kankei gijutsu jitsuyoka kaihatsu)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1996-03-01

    The Cat-CVD method is in verification test to establish it as production process of various semiconductor devices such as Ga-As IC, ferroelectric IC, Si IC, and TFT. This paper outlines the research results in fiscal 1998. Study was made on concept design of the Cat-CVD equipment for formation of Ga-As protective film, and basic technology for formation of SiN{sub x} film. Although reducing gas is used for deposition of SiN{sub x} film, anxious modification of oxide ferroelectric materials was avoided by substrate temperature control. Design and fabrication of the CVD equipment for Si ICs were also studied. The equipment was made of Al to control degassing as low as possible. As for production of TFT for LCD, formation technology of high-quality insulating thin film for low-temperature poly-Si TFT by CVD method, and formation of advanced insulating thin film and advanced poly- Si thin film were studied. A large-size deposition method of TFT insulating film, and low-temperature formation technology of poly-Si were also studied. (NEDO)

  1. Semiconductor Physical Electronics

    CERN Document Server

    Li, Sheng

    2006-01-01

    Semiconductor Physical Electronics, Second Edition, provides comprehensive coverage of fundamental semiconductor physics that is essential to an understanding of the physical and operational principles of a wide variety of semiconductor electronic and optoelectronic devices. This text presents a unified and balanced treatment of the physics, characterization, and applications of semiconductor materials and devices for physicists and material scientists who need further exposure to semiconductor and photonic devices, and for device engineers who need additional background on the underlying physical principles. This updated and revised second edition reflects advances in semicondutor technologies over the past decade, including many new semiconductor devices that have emerged and entered into the marketplace. It is suitable for graduate students in electrical engineering, materials science, physics, and chemical engineering, and as a general reference for processing and device engineers working in the semicondi...

  2. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    Science.gov (United States)

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Characterization and processing of bipolar semiconductor electrodes in a dual electrolyte cell

    Energy Technology Data Exchange (ETDEWEB)

    Cattarin, S.; Musiani, M.M. [Istituto di Polarografia ed Elettrochimica Preparativa del C.N.R., Padova (Italy)

    1995-11-01

    Photoelectrochemical (PEC) processes may be induced at both faces of a bipolar semiconductor electrode without application of metal contacts by using the dual electrolyte arrangement -- metal/electrolyte 1/semiconductor/electrolyte 2/metal -- and by applying a voltage to the end metal electrodes. The possibilities of semiconductor characterization (determination of action spectra and doping level) and processing (photoetching and metal electrodeposition) are discussed on the basis of model experiments, performed with n-InP wafers. The advantages of this approach over traditional PEC and electroless techniques are discussed with particular emphasis on etching.

  4. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Science.gov (United States)

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  5. Density functional theory and beyond-opportunities for quantum methods in materials modeling semiconductor technology

    International Nuclear Information System (INIS)

    Shankar, Sadasivan; Simka, Harsono; Haverty, Michael

    2008-01-01

    In the semiconductor industry, the use of new materials has been increasing with the advent of nanotechnology. As critical dimensions decrease, and the number of materials increases, the interactions between heterogeneous materials themselves and processing increase in complexity. Traditionally, applications of ab initio techniques are confined to electronic structure and band gap calculations of bulk materials, which are then used in coarse-grained models such as mesoscopic and continuum models. Density functional theory is the most widely used ab initio technique that was successfully extended to several applications. This paper illustrates applications of density functional theory to semiconductor processes and proposes further opportunities for use of such techniques in process development

  6. Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2015-07-01

    Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

  7. SETEC/Semiconductor Manufacturing Technologies Program: 1999 Annual and Final Report

    Energy Technology Data Exchange (ETDEWEB)

    MCBRAYER,JOHN D.

    2000-12-01

    This report summarizes the results of work conducted by the Semiconductor Manufacturing Technologies Program at Sandia National Laboratories (Sandia) during 1999. This work was performed by one working group: the Semiconductor Equipment Technology Center (SETEC). The group's projects included Numerical/Experimental Characterization of the Growth of Single-Crystal Calcium Fluoride (CaF{sub 2}); The Use of High-Resolution Transmission Electron Microscopy (HRTEM) Imaging for Certifying Critical-Dimension Reference Materials Fabricated with Silicon Micromachining; Assembly Test Chip for Flip Chip on Board; Plasma Mechanism Validation: Modeling and Experimentation; and Model-Based Reduction of Contamination in Gate-Quality Nitride Reactor. During 1999, all projects focused on meeting customer needs in a timely manner and ensuring that projects were aligned with the goals of the National Technology Roadmap for Semiconductors sponsored by the Semiconductor Industry Association and with Sandia's defense mission. This report also provides a short history of the Sandia/SEMATECH relationship and a brief on all projects completed during the seven years of the program.

  8. Photoelectrochemical processes in organic semiconductor: Ambipolar perylene diimide thin film

    Science.gov (United States)

    Kim, Jung Yong; Chung, In Jae

    2018-03-01

    A thin film of N,N‧-dioctadecyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C18) is spin-coated on indium tin oxide (ITO) glass. Using the PTCDI-C18/ITO electrode, we fabricate a photoelectrochemical cell with the ITO/PTCDI-C18/Redox Electrolyte/Pt configuration. The electrochemical properties of this device are investigated as a function of hydroquinone (HQ) concentration, bias voltage, and wavelength of light. Anodic photocurrent is observed at V ≥ -0.2 V vs. Ag/AgCl, indicating that the PTCDI-C18 film acts as an n-type semiconductor as usual. However, when benzoquinone (BQ) is inserted into the electrolyte system instead of HQ, cathodic photocurrent is observed at V ≤ 0.0 V, displaying that PTCDI-C18 abnormally serves as a p-type semiconductor. Hence the overall results reveal that the PTCDI-C18 film can be an ambipolar functional semiconductor depending on the redox couple in the appropriate voltage.

  9. Report on surveys in fiscal 2000 on the workshop on semiconductor technology for 21st century; 2000 nendo 21 seiki wo hiraku handotai gijutsu workshop chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-08-01

    A workshop was held in order to realize the high-level information society, and bring about the common recognition on the assignments in the directionality to go in the next five years and on the problems to be worked on with emphasis in semiconductor technologies to form the foundation thereof, standing on the viewpoint of about ten years ahead. The matters discussed in the major semiconductor technology field included promotion of development of functions and technologies sought in the next generation system LSI, CAD system technologies, assurance of design engineers, development of new devices corresponding to electric power saving requirement, promotion of high integration elementary technologies, innovation in memory elementary technologies and structuring of new devices, new materials and processes for SoC, establishment of the membrane technology to insulate low-k layers, necessity of coordination from the basics to the applied fields, development of lithography and measuring technologies of sub-100 nm, and post photo-lithography technologies, promotion of micro measurement and macro measurement technologies, requirements in high-profit type semiconductor production technologies, and structuring of production factories with high QTAT and flexibility. (NEDO)

  10. Designing solution-processable air-stable liquid crystalline crosslinkable semiconductors

    DEFF Research Database (Denmark)

    McCulloch, I.; Bailey, C.; Genevicius, K.

    2006-01-01

    organic light emitting diode displays, low frequency radio frequency identification tag and other low performance electronics. Organic semiconductors that offer both electrical performance and stability with respect to storage and operation under ambient conditions are required. This work describes...... the development of reactive mesogen semiconductors, which form large crosslinked LC domains on polymerization within mesophases. These crosslinked domains offer mechanical stability and are inert to solvent exposure in further processing steps. Reactive mesogens containing conjugated aromatic cores, designed...

  11. [Application of next-generation semiconductor sequencing technologies in genetic diagnosis of inherited cardiomyopathies].

    Science.gov (United States)

    Zhao, Yue; Zhang, Hong; Xia, Xue-shan

    2015-07-01

    Inherited cardiomyopathy is the most common hereditary cardiac disease. It also causes a significant proportion of sudden cardiac deaths in young adults and athletes. So far, approximately one hundred genes have been reported to be involved in cardiomyopathies through different mechanisms. Therefore, the identification of the genetic basis and disease mechanisms of cardiomyopathies are important for establishing a clinical diagnosis and genetic testing. Next-generation semiconductor sequencing (NGSS) technology platform is a high-throughput sequencer capable of analyzing clinically derived genomes with high productivity, sensitivity and specificity. It was launched in 2010 by Life Technologies of USA, and it is based on a high density semiconductor chip, which was covered with tens of thousands of wells. NGSS has been successfully used in candidate gene mutation screening to identify hereditary disease. In this review, we summarize these genetic variations, challenge and application of NGSS in inherited cardiomyopathy, and its value in disease diagnosis, prevention and treatment.

  12. Fabrication of laser-target components by semiconductor technology

    International Nuclear Information System (INIS)

    Tindall, W.E.

    1979-01-01

    This paper describes the design and fabrication of a unique silicon substrate with which laser-target components can be mass produced. Different sizes and shapes of gold foils from 50 to 3000 microns in diameter and up to 25 microns thick have been produced with this process since 1976

  13. Process waste assessment: Petroleum jelly removal from semiconductor die using trichloroethylene

    International Nuclear Information System (INIS)

    Curtin, D.P.

    1993-05-01

    The process analyzed involves non-production, laboratory environment use of trichloroethylene for the cleaning of semiconductor devices. The option selection centered on the replacement of the trichloroethylene with a non-hazardous material. This process waste assessment was performed as part of a pilot project

  14. Ergonomic risk factors of work processes in the semiconductor industry in Peninsular Malaysia.

    Science.gov (United States)

    Chee, Heng-Leng; Rampal, Krishna Gopal; Chandrasakaran, Abherhame

    2004-07-01

    A cross-sectional survey of semiconductor factories was conducted to identify the ergonomic risk factors in the work processes, the prevalence of body pain among workers, and the relationship between body pain and work processes. A total of 906 women semiconductor workers took part in the study. In wafer preparation and polishing, a combination of lifting weights and prolonged standing might have led to high pain prevalences in the low back (35.0% wafer preparation, 41.7% wafer polishing) and lower limbs (90.0% wafer preparation, 66.7% wafer polishing). Semiconductor front of line workers, who mostly walked around to operate machines in clean rooms, had the lowest prevalences of body pain. Semiconductor assembly middle of line workers, especially the molding workers, who did frequent lifting, had high pain prevalences in the neck/shoulders (54.8%) and upper back (43.5 %). In the semiconductor assembly end of line work section, chip inspection workers who were exposed to prolonged sitting without back support had high prevalences of neck/shoulder (62.2%) and upper back pain (50.0%), while chip testing workers who had to climb steps to load units had a high prevalence of lower limb pain (68.0%). Workers in the assembly of electronic components, carrying out repetitive tasks with hands and fingers, and standing in awkward postures had high pain prevalences in the neck/shoulders (61.5%), arms (38.5%), and hands/wrists (30.8%).

  15. Ionizing Radiation Processing Technology

    International Nuclear Information System (INIS)

    Rida Tajau; Kamarudin Hashim; Jamaliah Sharif; Ratnam, C.T.; Keong, C.C.

    2017-01-01

    This book completely brief on the basic concept and theory of ionizing radiation in polymers material processing. Besides of that the basic concept of polymerization addition, cross-linking and radiation degradation also highlighted in this informative book. All of the information is from scientific writing based on comprehensive scientific research in polymerization industry which using the radiation ionizing. It is very useful to other researcher whose study in Nuclear Sciencea and Science of Chemical and Material to use this book as a guideline for them in future scientific esearch.

  16. Advanced Processing and Characterization Technologies. Fabrication and Characterization of Semiconductor Optoelectronic Devices and Integrated Circuits Held in Clearwater, Florida on 8-10 May 1991. American Vacuum Society Series 10

    Science.gov (United States)

    1992-07-01

    ichi Gonda, Osaka University, Co-Chair Yasuhiko Arakawa, University of Tokyo Hiroyoshi Matsumura, Hitachi Alan Miller, University of Central Florida...M.H.Meynadier, et al. Phys. Rev. Lett. 29(12), (1984), 7042. 84 Mesoscopic Size Fabrication Technology Yasuhiko Arakawa Research Center for Advanced

  17. A cyano-terminated dithienyldiketopyrrolopyrrole dimer as a solution processable ambipolar semiconductor under ambient conditions.

    Science.gov (United States)

    Wang, Li; Zhang, Xiaojie; Tian, Hongkun; Lu, Yunfeng; Geng, Yanhou; Wang, Fosong

    2013-12-14

    A cyano-terminated dimer of dithienyldiketopyrrolopyrrole (TDPP), DPP2-CN, is a solution processable ambipolar semiconductor with field-effect hole and electron mobilities of 0.066 and 0.033 cm(2) V(-1) s(-1), respectively, under ambient conditions.

  18. Ultrafast dynamics in semiconductor optical amplifiers and all-optical processing: Bulk versus quantum dot devices

    DEFF Research Database (Denmark)

    Mørk, Jesper; Berg, Tommy Winther; Magnúsdóttir, Ingibjörg

    2003-01-01

    We discuss the dynamical properties of semiconductor optical amplifiers and the importance for all-optical signal processing. In particular, the dynamics of quantum dot amplifiers is considered and it is suggested that these may be operated at very high bit-rates without significant patterning...

  19. Ultrafast all-optical signal processing using semiconductor optical amplifiers

    NARCIS (Netherlands)

    Li, Z.

    2007-01-01

    As the bit rate of one wavelength channel and the number of channels keep increasing in the telecommunication networks thanks to the advancement of optical transmission technologies, switching is experiencing the transition from the electrical domain to the optical domain. All-optical signal

  20. Plasma technology in metallurgical processing

    Energy Technology Data Exchange (ETDEWEB)

    Haile, O.

    1995-12-31

    This literature work is mainly focusing on the mechanisms of plasma technology and telling about metallurgical processing, particularly iron and steelmaking as well as the advantage of the unique properties of plasma. The main advantages of plasma technology in metallurgical operations is to direct utilization of naturally available raw materials and fuels without costly upgrading andlor beneficiation, improved environmental impact, improve process control, significant amplification of reactor and process equipment utilization and increased efficiency of raw materials, energy and man power. This literature survey is based on the publication `plasma technology in metallurgical processing` presents a comprehensive account of the physical, electrical, and mechanical aspects of plasma production and practical processing. The applications of plasma technology in metallurgical processing are covered in depth with special emphasis on developments in promising early stages. Plasma technology of today is mature in the metallurgical process applications. A few dramatic improvements are expected in the near future this giving an impetus to the technologists for the long range planning. (18 refs.) (author)

  1. PHYSICAL RESOURCES OF INFORMATION PROCESSES AND TECHNOLOGIES

    Directory of Open Access Journals (Sweden)

    Mikhail O. Kolbanev

    2014-11-01

    Full Text Available Subject of study. The paper describes basic information technologies for automating of information processes of data storage, distribution and processing in terms of required physical resources. It is shown that the study of these processes with such traditional objectives of modern computer science, as the ability to transfer knowledge, degree of automation, information security, coding, reliability, and others, is not enough. The reasons are: on the one hand, the increase in the volume and intensity of information exchange in the subject of human activity and, on the other hand, drawing near to the limit of information systems efficiency based on semiconductor technologies. Creation of such technologies, which not only provide support for information interaction, but also consume a rational amount of physical resources, has become an actual problem of modern engineering development. Thus, basic information technologies for storage, distribution and processing of information to support the interaction between people are the object of study, and physical temporal, spatial and energy resources required for implementation of these technologies are the subject of study. Approaches. An attempt is made to enlarge the possibilities of traditional cybernetics methodology, which replaces the consideration of material information component by states search for information objects. It is done by taking explicitly into account the amount of physical resources required for changes in the states of information media. Purpose of study. The paper deals with working out of a common approach to the comparison and subsequent selection of basic information technologies for storage, distribution and processing of data, taking into account not only the requirements for the quality of information exchange in particular subject area and the degree of technology application, but also the amounts of consumed physical resources. Main findings. Classification of resources

  2. Processing of nanocrystalline diamond thin films for thermal management of wide-bandgap semiconductor power electronics

    International Nuclear Information System (INIS)

    Govindaraju, N.; Singh, R.N.

    2011-01-01

    Highlights: → Studied effect of nanocrystalline diamond (NCD) deposition on device metallization. → Deposited NCD on to top of High Electron Mobility Transistors (HEMTs) and Si devices. → Temperatures below 290 deg. C for Si devices and 320 deg. C for HEMTs prevent metal damage. → Development of novel NCD-based thermal management for power electronics feasible. - Abstract: High current densities in wide-bandgap semiconductor electronics operating at high power levels results in significant self-heating of devices, which necessitates the development thermal management technologies to effectively dissipate the generated heat. This paper lays the foundation for the development of such technology by ascertaining process conditions for depositing nanocrystalline diamond (NCD) on AlGaN/GaN High Electron Mobility Transistors (HEMTs) with no visible damage to device metallization. NCD deposition is carried out on Si and GaN HEMTs with Au/Ni metallization. Raman spectroscopy, optical and scanning electron microscopy are used to evaluate the quality of the deposited NCD films. Si device metallization is used as a test bed for developing process conditions for NCD deposition on AlGaN/GaN HEMTs. Results indicate that no visible damage occurs to the device metallization for deposition conditions below 290 deg. C for Si devices and below 320 deg. C for the AlGaN/GaN HEMTs. Possible mechanisms for metallization damage above the deposition temperature are enumerated. Electrical testing of the AlGaN/GaN HEMTs indicates that it is indeed possible to deposit NCD on GaN-based devices with no significant degradation in device performance.

  3. Radiation processing technology in Malaysia

    International Nuclear Information System (INIS)

    Khairul Zaman Hj Mohd Dahlan

    2004-01-01

    Radiation processing technology is widely used in industry to enhance efficiency and productivity, improve product quality and competitiveness. Efforts have been made by MINT to expand the application of radiation processing technology for modification of indigenous materials such as natural rubber and rubber based products, palm oil and palm oil based products and polysaccharide into new and high value added products. This paper described MINT experiences on developing products through R and D from the laboratory to the pilot plant stage and commercialization. The paper also explained some issues and challenges that MINT encountered in the process of commercialization of its R and D results. (author)

  4. Automated defect spatial signature analysis for semiconductor manufacturing process

    Science.gov (United States)

    Tobin, Jr., Kenneth W.; Gleason, Shaun S.; Karnowski, Thomas P.; Sari-Sarraf, Hamed

    1999-01-01

    An apparatus and method for performing automated defect spatial signature alysis on a data set representing defect coordinates and wafer processing information includes categorizing data from the data set into a plurality of high level categories, classifying the categorized data contained in each high level category into user-labeled signature events, and correlating the categorized, classified signature events to a present or incipient anomalous process condition.

  5. Ultrafast optical signal processing using semiconductor quantum dot amplifiers

    DEFF Research Database (Denmark)

    Berg, Tommy Winther; Mørk, Jesper

    2002-01-01

    The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing.......The linear and nonlinear properties of quantum dot amplifiers are discussed on the basis of an extensive theoretical model. These devices show great potential for linear amplification as well as ultrafast signal processing....

  6. Development of process technology for large-area thin-film solar modules based on compound semiconductors. Final report; Entwicklung der technologischen Grundlagen fuer grosse Photovoltaikmodule auf Basis von Duennschicht-Verbindungshalbleitern. Abschlussbericht

    Energy Technology Data Exchange (ETDEWEB)

    Maurus, H.; Lechner, P.; Geyer, R.; Ruebel, H.; Schade, H.; Psyk, W.; Frammelsberger, W.; Berthold, W.; Eichner, C.; Heckel, E.; Huber, R.; Labudde-Eibl, H.; Raith, S.; Schenk, B.; Ullrich, H.

    1998-06-01

    A cooperative effort of the Center for Solar Energy and Hydrogen Research (ZSW) and Phototronics Solartechnik GmbH (PST) aimed at the transfer of highly efficient solar cells developed on a laboratory scale, to large-area thin-film solar modules suitable for production. This work was based on research and development at the Institute for Physical Electronics (IPE) of Stuttgart University and ZSW on one hand, and on the know-how of PST in regard to large-area module fabrication on the other hand. The various thin-film layers of the cells and modules comprize molybdenum as rear contact, copper-indium(gallium)-diselenide (CIGS) as absorber material, the combination of cadmium sulphide (CdS) and ZnO as window layer. To produce these layers on large areas (30x30 cm{sup 2}), equipment was constructed and procedures were developed. Monolithic series connection of cells, used in other thin-film technologies, was studied and optimized by suitable patterning procedures, such as laser-scribing, mechanical scribing or lift-off techniques. Central to the PST efforts was the large-area deposition of Mo followed by patterning for the monolithic series connection, and furthermore important contributions in regard to the ZnO window layer as well as aspects of the module technology. The latter include film removal along the module edges, contacting and cable attachment, lamination, module measurements and temperature/humidity tests. The main goal, namely the basic development of equipment and procedures to fabricate large-area (30x30 cm{sup 2}) modules with an efficiency of 10-12%, was reached (best module with 11.7% efficiency referenced to the aperature area). (orig.) [Deutsch] Um die im Labormassstab entwickelten hocheffizienten Solarzellen in industriell relevante grossflaechige Duennschichtmodule umzusetzen, arbeiteten das Zentrum fuer Sonnenenergie- und Wasserstoff-Forschung (ZSW) Baden-Wuerttemberg und die Phototronics Solartechnik GmbH (PST) zusammen. Ausgangsbasis waren

  7. Direct and indirect two-photon processes in semiconductors

    International Nuclear Information System (INIS)

    Hassan, A.R.

    1986-07-01

    The expressions describing direct and indirect two-photon absorption in crystals are given. They are valid both near and far from the energy gap. A perturbative approach through two different band models is adopted. The effects of the non-parabolicity and the degeneracy of the energy bands are considered. The numerical results are compared with the other theories and with a recent experimental data in Zn and AgCl. It is shown that the dominant transition mechanisms are of the allowed-allowed type near and far from the gap for both direct and indirect processes. (author)

  8. High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

    Science.gov (United States)

    Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

    2015-08-12

    Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

  9. New semiconductor laser technology for gas sensing applications in the 1650nm range

    Science.gov (United States)

    Morrison, Gordon B.; Sherman, Jes; Estrella, Steven; Moreira, Renan L.; Leisher, Paul O.; Mashanovitch, Milan L.; Stephen, Mark; Numata, Kenji; Wu, Stewart; Riris, Haris

    2017-08-01

    Atmospheric methane (CH4) is the second most important anthropogenic greenhouse gas with approximately 25 times the radiative forcing of carbon dioxide (CO2) per molecule. CH4 also contributes to pollution in the lower atmosphere through chemical reactions leading to ozone production. Recent developments of LIDAR measurement technology for CH4 have been previously reported by Goddard Space Flight Center (GSFC). In this paper, we report on a novel, high-performance tunable semiconductor laser technology developed by Freedom Photonics for the 1650nm wavelength range operation, and for LIDAR detection of CH4. Devices described are monolithic, with simple control, and compatible with low-cost fabrication techniques. We present 3 different types of tunable lasers implemented for this application.

  10. FY 1999 achievement report on the project on the R and D of university-cooperation industrial science technology. Semiconductor device production process by Cat-CVD method (Development of the technology to rationalize energy utilization); 1999 nendo Cat-CVD ho ni yoru handotai device seizo process seika hokokusho. Energy shiyo gorika gijutsu kaihatsu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    The paper described the results obtained by FY 1999 of the semiconductor device production using the catalytic chemical vapor deposition method. As to the application to Ga-As integrated circuits, a guide was acquired for the accumulation speed over 40nm/min. The 5% thickness distribution of inner film of 4-inch wafer, refractive index distribution of 1% or less, and 2D electron gas concentration change of 1.5% could be realized. The experimental device for commercialization was designed and manufactured. Concerning the application to ferroelectric integrated circuits, the accumulation temperature condition was refined as 200 degrees C or less, which resulted in succeeding in forming Si{sub 3}N{sub 4} film at low temperature of 120 degrees C (accumulation speed: 20nm/min.) Relating to the application to Si integrated circuits, a machine to cope with 8 inches was developed. The 6-inch film thickness distribution of 5% and the refractive index distribution of 1% were realized. In regard to the leak current, extreme-thin film was superior to thermal oxidation film. About the application to the formation of high-quality thermal insulation thin films for low temperature polycrystal Si thin film transistor use, poly-Si films with a Hall effect mobility of approximately 10cm{sup 2}/Vs which is relatively high could be formed. In addition, the design/manufacture of Cat-CVD device with a large area were made. (NEDO)

  11. Distillation process using microchannel technology

    Science.gov (United States)

    Tonkovich, Anna Lee [Dublin, OH; Simmons, Wayne W [Dublin, OH; Silva, Laura J [Dublin, OH; Qiu, Dongming [Carbondale, IL; Perry, Steven T [Galloway, OH; Yuschak, Thomas [Dublin, OH; Hickey, Thomas P [Dublin, OH; Arora, Ravi [Dublin, OH; Smith, Amanda [Galloway, OH; Litt, Robert Dwayne [Westerville, OH; Neagle, Paul [Westerville, OH

    2009-11-03

    The disclosed invention relates to a distillation process for separating two or more components having different volatilities from a liquid mixture containing the components. The process employs microchannel technology for effecting the distillation and is particularly suitable for conducting difficult separations, such as the separation of ethane from ethylene, wherein the individual components are characterized by having volatilities that are very close to one another.

  12. Process Engineering Technology Center Initiative

    Science.gov (United States)

    Centeno, Martha A.

    2002-01-01

    NASA's Kennedy Space Center (KSC) is developing as a world-class Spaceport Technology Center (STC). From a process engineering (PE) perspective, the facilities used for flight hardware processing at KSC are NASA's premier factories. The products of these factories are safe, successful shuttle and expendable vehicle launches carrying state-of-the-art payloads. PE is devoted to process design, process management, and process improvement, rather than product design. PE also emphasizes the relationships of workers with systems and processes. Thus, it is difficult to speak of having a laboratory for PE at K.S.C. because the entire facility is practically a laboratory when observed from a macro level perspective. However, it becomes necessary, at times, to show and display how K.S.C. has benefited from PE and how K.S.C. has contributed to the development of PE; hence, it has been proposed that a Process Engineering Technology Center (PETC) be developed to offer a place with a centralized focus on PE projects, and a place where K.S.C.'s PE capabilities can be showcased, and a venue where new Process Engineering technologies can be investigated and tested. Graphics for showcasing PE capabilities have been designed, and two initial test beds for PE technology research have been identified. Specifically, one test bed will look into the use of wearable computers with head mounted displays to deliver work instructions; the other test bed will look into developing simulation models that can be assembled into one to create a hierarchical model.

  13. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  14. Pyro processing technology at KAERI

    International Nuclear Information System (INIS)

    Lee, Hansoo; Kim, Eungho; Park, Seongwon

    2008-01-01

    KAERI has studied on the pyro processing as a spent fuel treatment method for more than decade. The process includes voloxidation, electroreduction, electrorefining with solid and liquid cathodes, and waste salt treatment. Each process has developed its own characteristics which are suitable for treating high mass flow. In the electroreduction process, a magnesia filter was used for integrated electrolytic reduction. More than 99% of reduction yield was achieved. Electrorefining process employs the continuous operation concept. Uranium deposits on the surface of graphite cathode and it is stripped off spontaneously to the bottom of the reactor, which allows continuous operation. Crystallization method was used for treating waste salt. Pure salt is recovered by Czochralski method or zone freezing method and subsequently recycled to the reactor. These advanced technologies ensure the operation of pyro processing in a larger scale

  15. Semiconductor optical amplifier-based all-optical gates for high-speed optical processing

    DEFF Research Database (Denmark)

    Stubkjær, Kristian

    2000-01-01

    Semiconductor optical amplifiers are useful building blocks for all-optical gates as wavelength converters and OTDM demultiplexers. The paper reviews the progress from simple gates using cross-gain modulation and four-wave mixing to the integrated interferometric gates using cross-phase modulation....... These gates are very efficient for high-speed signal processing and open up interesting new areas, such as all-optical regeneration and high-speed all-optical logic functions...

  16. Technology development life cycle processes.

    Energy Technology Data Exchange (ETDEWEB)

    Beck, David Franklin

    2013-05-01

    This report and set of appendices are a collection of memoranda originally drafted in 2009 for the purpose of providing motivation and the necessary background material to support the definition and integration of engineering and management processes related to technology development. At the time there was interest and support to move from Capability Maturity Model Integration (CMMI) Level One (ad hoc processes) to Level Three. As presented herein, the material begins with a survey of open literature perspectives on technology development life cycles, including published data on %E2%80%9Cwhat went wrong.%E2%80%9D The main thrust of the material presents a rational expose%CC%81 of a structured technology development life cycle that uses the scientific method as a framework, with further rigor added from adapting relevant portions of the systems engineering process. The material concludes with a discussion on the use of multiple measures to assess technology maturity, including consideration of the viewpoint of potential users.

  17. 2nd International Conference on Ion Implantation in Semiconductors, Physics and Technology, Fundamental and Applied Aspects

    CERN Document Server

    Graul, Jürgen

    1971-01-01

    In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos­ sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power­ ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori­ ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume c...

  18. Microwave waste processing technology overview

    Energy Technology Data Exchange (ETDEWEB)

    Petersen, R.D.

    1993-02-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the {open_quotes}cold{close_quotes} demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge.

  19. Microwave waste processing technology overview

    International Nuclear Information System (INIS)

    Petersen, R.D.

    1993-02-01

    Applications using microwave energy in the chemical processing industry have increased within the last ten years. Recently, interest in waste treatment applications process development, especially solidification, has grown. Microwave waste processing offers many advantages over conventional waste treatment technologies. These advantages include a high density, leach resistant, robust waste form, volume and toxicity reduction, favorable economics, in-container treatment, good public acceptance, isolated equipment, and instantaneous energy control. The results from the open-quotes coldclose quotes demonstration scale testing at the Rocky Flats nuclear weapons facility are described. Preliminary results for a transuranic (TRU) precipitation sludge indicate that volume reductions of over 80% are achievable over the current immobilization process. An economic evaluation performed demonstrated cost savings of $11.68 per pound compared to the immobilization process currently in use on wet sludge

  20. Magnetic filter apparatus and method for generating cold plasma in semiconductor processing

    Science.gov (United States)

    Vella, M.C.

    1996-08-13

    Disclosed herein is a system and method for providing a plasma flood having a low electron temperature to a semiconductor target region during an ion implantation process. The plasma generator providing the plasma is coupled to a magnetic filter which allows ions and low energy electrons to pass therethrough while retaining captive the primary or high energy electrons. The ions and low energy electrons form a ``cold plasma`` which is diffused in the region of the process surface while the ion implantation process takes place. 15 figs.

  1. Exposure Characteristics of Nanoparticles as Process By-products for the Semiconductor Manufacturing Industry.

    Science.gov (United States)

    Choi, Kwang-Min; Kim, Jin-Ho; Park, Ju-Hyun; Kim, Kwan-Sick; Bae, Gwi-Nam

    2015-01-01

    This study aims to elucidate the exposure properties of nanoparticles (NPs; semiconductor manufacturing processes. The measurements of airborne NPs were mainly performed around process equipment during fabrication processes and during maintenance. The number concentrations of NPs were measured using a water-based condensation particle counter having a size range of 10-3,000 nm. The chemical composition, size, and shape of NPs were determined by scanning electron microscopy and transmission electron microscopy techniques equipped with energy dispersive spectroscopy. The resulting concentrations of NPs ranged from 0.00-11.47 particles/cm(3). The concentration of NPs measured during maintenance showed a tendency to increase, albeit incrementally, compared to that measured during normal conditions (under typical process conditions without maintenance). However, the increment was small. When comparing the mean number concentration and standard deviation (n ± σ) of NPs, the chemical mechanical polishing (CMP) process was the highest (3.45 ± 3.65 particles/cm(3)), and the dry etch (ETCH) process was the lowest (0.11 ± 0.22 particles/cm(3)). The major NPs observed were silica (SiO2) and titania (TiO2) particles, which were mainly spherical agglomerates ranging in size from 25-280 nm. Sampling of semiconductor processes in CMP, chemical vapor deposition, and ETCH reveled NPs were particle size exceeded 100 nm in diffusion, metallization, ion implantation, and wet cleaning/etching process. The results show that the SiO2 and TiO2 are the major NPs present in semiconductor cleanroom environments.

  2. Environmental and process monitoring technologies

    International Nuclear Information System (INIS)

    Vo-Dinh, Tuan

    1993-01-01

    The objective of this conference was to provide a multidisciplinary forum dealing with state-of-the-art methods and instrumentation for environmental and process monitoring. In the last few years, important advances have been made in improving existing analytical methods and developing new techniques for trace detection of chemicals. These monitoring technologies are a topic of great interest for environmental and industrial control in a wide spectrum of areas. Sensitive detection, selective characterization, and cost-effective analysis are among the most important challenges facing monitoring technologies. This conference integrating interdisciplinary research and development was aimed to present the most recent advances and applications in the important areas of environmental and process monitoring. Separate abstracts have been prepared for 34 papers for inclusion in the appropriate data bases

  3. Fast optical recording media based on semiconductor nanostructures for image recording and processing

    International Nuclear Information System (INIS)

    Kasherininov, P. G.; Tomasov, A. A.

    2008-01-01

    Fast optical recording media based on semiconductor nanostructures (CdTe, GaAs) for image recording and processing with a speed to 10 6 cycle/s (which exceeds the speed of known recording media based on metal-insulator-semiconductor-(liquid crystal) (MIS-LC) structures by two to three orders of magnitude), a photosensitivity of 10 -2 V/cm 2 , and a spatial resolution of 5-10 (line pairs)/mm are developed. Operating principles of nanostructures as fast optical recording media and methods for reading images recorded in such media are described. Fast optical processors for recording images in incoherent light based on CdTe crystal nanostructures are implemented. The possibility of their application to fabricate image correlators is shown.

  4. A new method for wafer quality monitoring using semiconductor process big data

    Science.gov (United States)

    Sohn, Younghoon; Lee, Hyun; Yang, Yusin; Jun, Chungsam

    2017-03-01

    In this paper we proposed a new semiconductor quality monitoring methodology - Process Sensor Log Analysis (PSLA) - using process sensor data for the detection of wafer defectivity and quality monitoring. We developed exclusive key parameter selection algorithm and user friendly system which is able to handle large amount of big data very effectively. Several production wafers were selected and analyzed based on the risk analysis of process driven defects, for example alignment quality of process layers. Thickness of spin-coated material can be measured using PSLA without conventional metrology process. In addition, chip yield impact was verified by matching key parameter changes with electrical die sort (EDS) fail maps at the end of the production step. From this work, we were able to determine that process robustness and product yields could be improved by monitoring the key factors in the process big data.

  5. Spatially resolvable optical emission spectrometer for analyzing density uniformity of semiconductor process plasma

    International Nuclear Information System (INIS)

    Oh, Changhoon; Ryoo, Hoonchul; Lee, Hyungwoo; Hahn, Jae W.; Kim, Se-Yeon; Yi, Hun-Jung

    2010-01-01

    We proposed a spatially resolved optical emission spectrometer (SROES) for analyzing the uniformity of plasma density for semiconductor processes. To enhance the spatial resolution of the SROES, we constructed a SROES system using a series of lenses, apertures, and pinholes. We calculated the spatial resolution of the SROES for the variation of pinhole size, and our calculated results were in good agreement with the measured spatial variation of the constructed SROES. The performance of the SROES was also verified by detecting the correlation between the distribution of a fluorine radical in inductively coupled plasma etch process and the etch rate of a SiO 2 film on a silicon wafer.

  6. On the use of the plasma in III-V semiconductor processing

    Energy Technology Data Exchange (ETDEWEB)

    Bruno, G.; Capezzuto, P.; Losurdo, M. [C.N.R.-Centro di Studio per la Chimica dei Plasmi Dipartimento di Chimica-Universita di Bari via Orabona, 4-70126 Bari (Italy)

    1996-03-01

    The manufacture of usable devices based on III-V semiconductor materials is a complex process requiring epilayer growth, anisotropic etching, defect passivation, surface oxidation and substrate preparation processes. The combination of plasma based methods with metalorganic chemical vapor deposition (MOCVD) offers some real advantages: {ital in} {ital situ} production and preactivation of PH{sub 3} and sample preparation using H-atom. The detailed understanding and use of the plasma (using mass spectrometry, optical emission spectroscopy, laser reflectance interferometry and spectroscopic ellipsometry) as applied to InP material is discussed. {copyright} {ital 1996 American Institute of Physics.}

  7. Abatement of waste gases and water during the processes of semiconductor fabrication.

    Science.gov (United States)

    Wen, Rui-mei; Liang, Jun-wu

    2002-10-01

    The purpose of this article is to examine the methods and equipment for abating waste gases and water produced during the manufacture of semiconductor materials and devices. Three separating methods and equipment are used to control three different groups of electronic wastes. The first group includes arsine and phosphine emitted during the processes of semiconductor materials manufacture. The abatement procedure for this group of pollutants consists of adding iodates, cupric and manganese salts to a multiple shower tower (MST) structure. The second group includes pollutants containing arsenic, phosphorus, HF, HCl, NO2, and SO3 emitted during the manufacture of semiconductor materials and devices. The abatement procedure involves mixing oxidants and bases in an oval column with a separator in the middle. The third group consists of the ions of As, P and heavy metals contained in the waste water. The abatement procedure includes adding CaCO3 and ferric salts in a flocculation-sedimentation compact device equipment. Test results showed that all waste gases and water after the abatement procedures presented in this article passed the discharge standards set by the State Environmental Protection Administration of China.

  8. Technologies to support industrial processes

    International Nuclear Information System (INIS)

    Palazzi, G.; Savelli, D.

    1989-05-01

    Control and measuring techniques applied to industry have the common aim of increasing safety, reliability and plant availability. The industrial monitoring system needs a lot of sensors, whose signals, elaborated and interpreted, allow one to define the best working condition; moreover control instruments perform a diagnosis related to damages and breakages. The Experimental Engineering Division of ENEA's Thermal Reactor Department has developed sensors and measuring apparatus and has acquired advanced control techniques. All these systems, containing an original software, have been applied to industrial process problems and/or to experimental facilities both to increase reliability and to understand better process physics. Division activities are grouped in four sectors: non-destructive examinations (ultrasonic, eddy current, thermography, holographic interpherometry, penetrant liquids and magnetoscopy); innovative sensors (heated thermocouples, optical fiber sensors); advanced measuring systems (laser technology for fluidodynamic measures, nuclear radiation techniques, infrared measuring, mass spectrometer, hot-film anemometer, chromatographic apparatus); advanced technologies for diagnosis and signal analysis (digital image processing, statistical analysis). (author)

  9. Membrane processes in nuclear technologies

    International Nuclear Information System (INIS)

    Zakrzewska-Trznadel, G.

    2006-01-01

    The treatment of radioactive wastes is necessary taking into account the potential hazard of radioactive substances to human health and surrounding environment. The choice of appropriate technology depends on capital and operational costs, wastes amount and their characteristics, appointed targets of the process, e.g. the values of decontamination factors and volume reduction coefficients. The conventional technologies applied for radioactive waste processing, such as precipitation coupled with sedimentation, ion exchange and evaporation have many drawbacks. These include high energy consumption and formation of secondary wastes, e.g. the sludge from sediment tanks, spent ion exchange adsorbents and regeneration solutions. There are also many limitations of such processes, i.e. foaming and drop entrainment in evaporators, loses of solvents and production of secondary wastes in solvent extraction or bed clogging in ion exchange columns. Membrane processes as the newest achievement of the process engineering can successfully supersede many non-effective, out-of-date methods. But in some instances they can also complement these methods whilst improving the parameters of effluents and purification economy. This monograph presents own research data on the application of recent achievements in the area of membrane processes for solving selected problems in nuclear technology. Relatively big space was devoted to the use of membrane processing of low and intermediate radioactive liquid wastes because of numerous applications of these processes in nuclear centres over the world and also because of the interests of the author that was reflected by her recent research projects and activity. This work presents a review on the membrane methods recently introduced into the nuclear technology against the background of the other, commonly applied separation techniques, with indications of the possibilities and prospects for their further developments. Particular attention was paid

  10. Images through semiconductors

    International Nuclear Information System (INIS)

    Anon.

    1986-01-01

    Improved image processing techniques are constantly being developed for television and for scanners using X-rays or other radiation for industrial or medical applications, etc. As Erik Heijne of CERN explains here, particle physics too has its own special requirements for image processing. The increasing use of semiconductor techniques for handling measurements down to the level of a few microns provides another example of the close interplay between scientific research and technological development. (orig.).

  11. Nanostructured p-Type Semiconductor Electrodes and Photoelectrochemistry of Their Reduction Processes

    Directory of Open Access Journals (Sweden)

    Matteo Bonomo

    2016-05-01

    Full Text Available This review reports the properties of p-type semiconductors with nanostructured features employed as photocathodes in photoelectrochemical cells (PECs. Light absorption is crucial for the activation of the reduction processes occurring at the p-type electrode either in the pristine or in a modified/sensitized state. Beside thermodynamics, the kinetics of the electron transfer (ET process from photocathode to a redox shuttle in the oxidized form are also crucial since the flow of electrons will take place correctly if the ET rate will overcome that one of recombination and trapping events which impede the charge separation produced by the absorption of light. Depending on the nature of the chromophore, i.e., if the semiconductor itself or the chemisorbed dye-sensitizer, different energy levels will be involved in the cathodic ET process. An analysis of the general properties and requirements of electrodic materials of p-type for being efficient photoelectrocatalysts of reduction processes in dye-sensitized solar cells (DSC will be given. The working principle of p-type DSCs will be described and extended to other p-type PECs conceived and developed for the conversion of the solar radiation into chemical products of energetic/chemical interest like non fossil fuels or derivatives of carbon dioxide.

  12. Digital approach to high-resolution pulse processing for semiconductor detectors

    International Nuclear Information System (INIS)

    Georgiev, A.; Buchner, A.; Gast, W.; Lieder, R.M.

    1992-01-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs

  13. Digital approach to high-resolution pulse processing for semiconductor detectors

    Energy Technology Data Exchange (ETDEWEB)

    Georgiev, A [Sofia Univ. (Bulgaria); Buchner, A [Forschungszentrum Rossendorf (Germany); Gast, W; Lieder, R M [Forschungszentrum Juelich GmbH (Germany). Inst. fuer Kernphysik; Stein, J [Target System Electronic GmbH, Solingen, (Germany)

    1992-08-01

    A new design philosophy for processing signals produced by high resolution, large volume semiconductor detectors is described. These detectors, to be used in the next generation of spectrometer arrays for nuclear research (i.e. EUROBALL, etc.), present a set of problems like resolution degradation due to charge trapping and ballistic defect effects, low resolution at a high count rate, poor long term stability, etc. To solve these problems, a new design approach has been developed, including reconstruction of the event charge, providing a pure triangular residual function, and suppressing low frequency noise. 5 refs., 4 figs.

  14. Commercial Parts Technology Qualification Processes

    Science.gov (United States)

    Cooper, Mark S.

    2013-01-01

    Many high-reliability systems, including space systems, use selected commercial parts (including Plastic Encapsulated Microelectronics or PEMs) for unique functionality, small size, low weight, high mechanical shock resistance, and other factors. Predominantly this usage is subjected to certain 100% tests (typically called screens) and certain destructive tests usually (but not always) performed on the flight lot (typically called qualification tests). Frequently used approaches include those documented in EEE-INST-002 and JPL DocID62212 (which are sometimes modified by the particular aerospace space systems manufacturer). In this study, approaches from these documents and several space systems manufacturers are compared to approaches from a launch systems manufacturer (SpaceX), an implantable medical electronics manufacturer (Medtronics), and a high-reliability transport system process (automotive systems). In the conclusions section, these processes are outlined for all of these cases and presented in tabular form. Then some simple comparisons are made. In this introduction section, the PEM technology qualification process is described, as documented in EEE-INST-002 (written by the Goddard Space Flight Center, GSFC), as well as the somewhat modified approach employed at the Jet Propulsion Laboratory (JPL). Approaches used at several major NASA contractors are also described

  15. Management of Technology - a political process approach

    DEFF Research Database (Denmark)

    Koch, Christian

    1999-01-01

    Most management of technology writings fail to address enterprise developments as political processes, where visions, coalitions and emergence are central features. The paper report of a participants observation study of management of technology processes.......Most management of technology writings fail to address enterprise developments as political processes, where visions, coalitions and emergence are central features. The paper report of a participants observation study of management of technology processes....

  16. An apparatus and process for forming P-N junction semiconductor units

    International Nuclear Information System (INIS)

    1975-01-01

    It is stated that although many methods of ion implantation have been developed it seems that the method of 'hot implantation' is still in its infancy. In this method the target is preheated in an ion implantor during implantation of ions, leading to radiation enhanced diffusion. The apparatus described comprises the following: (i) a bell jar evacuated to -3 Torr containing four electrodes arranged in two pairs, one electrode of the first pair being in the form of a mesh; (ii) a source of high pulsating direct voltage connected to the first pair of electrodes, with the mesh electrode negatively poled, to ionise the rarified air in the bell jar and accelerate the resulting positive N and O ions; (iii) an RF voltage source connected to the other pair of electrodes to facilitate the ionisation; (iv) a dopant semiconductor body, heated by a wire wound heater, placed underneath the mesh electrode so that the accelerated ions bombard the dopant layer through the mesh electrode and implant dopant atoms in the semiconductor body. The distance between the mesh electrode and the surface of the dopant-coated semiconductive body, should be about 5mm. The mesh electrode consists of a sputtering-resistant refractory metal, and includes a cooling system. The dopant-coated semiconductive body is placed on a ceramic plate in the bell jar, and the power supply line of the heater is insulated from the voltage applied to the negative electrode, which is earthed, by using an insulated heater transformer combined with an autotransformer. The ceramic plate is attached to a plate on which the heater is wound, and the temperature of the heating should be variable between 400 0 and 500 0 C. A process for forming P-N junction semiconductor units using this apparatus is described. (U.K.)

  17. 76 FR 30696 - Technology Evaluation Process

    Science.gov (United States)

    2011-05-26

    ...-NOA-0039] Technology Evaluation Process AGENCY: Office of Energy Efficiency and Renewable Energy... (DOE) seeks comments and information related to a commercial buildings technology evaluation process... evaluation efforts. The goal of creating this standard process is to evaluate energy-saving technologies in a...

  18. 76 FR 37344 - Technology Evaluation Process

    Science.gov (United States)

    2011-06-27

    ...-NOA-0039] Technology Evaluation Process AGENCY: Office of Energy Efficiency and Renewable Energy... seeks comments and information related to a commercial buildings technology evaluation process. DOE is seeking to create a process for evaluating emerging and underutilized energy efficient technologies for...

  19. SEMICONDUCTOR TECHNOLOGY: TaN wet etch for application in dual-metal-gate integration technology

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2009-12-01

    Wet-etch etchants and the TaN film method for dual-metal-gate integration are investigated. Both HF/HN O3/H2O and NH4OH/H2O2 solutions can etch TaN effectively, but poor selectivity to the gate dielectric for the HF/HNO3/H2O solution due to HF being included in HF/HNO3/H2O, and the fact that TaN is difficult to etch in the NH4OH/H2O2 solution at the first stage due to the thin TaOxNy layer on the TaN surface, mean that they are difficult to individually apply to dual-metal-gate integration. A two-step wet etching strategy using the HF/HNO3/H2O solution first and the NH4OH/H2O2 solution later can fully remove thin TaN film with a photo-resist mask and has high selectivity to the HfSiON dielectric film underneath. High-k dielectric film surfaces are smooth after wet etching of the TaN metal gate and MOSCAPs show well-behaved C-V and Jg-Vg characteristics, which all prove that the wet etching of TaN has little impact on electrical performance and can be applied to dual-metal-gate integration technology for removing the first TaN metal gate in the PMOS region.

  20. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei

    2015-04-20

    In this report, both p- and n-type tin oxide thin-film transistors (TFTs) were simultaneously achieved using single-step deposition of the tin oxide channel layer. The tuning of charge carrier polarity in the tin oxide channel is achieved by selectively depositing a copper oxide capping layer on top of tin oxide, which serves as an oxygen source, providing additional oxygen to form an n-type tin dioxide phase. The oxidation process can be realized by annealing at temperature as low as 190°C in air, which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin dioxide phase, which facilitates the application of this transparent oxide semiconductor in emerging electronic devices field.

  1. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    Science.gov (United States)

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  2. Quantum control and process tomography of a semiconductor quantum dot hybrid qubit.

    Science.gov (United States)

    Kim, Dohun; Shi, Zhan; Simmons, C B; Ward, D R; Prance, J R; Koh, Teck Seng; Gamble, John King; Savage, D E; Lagally, M G; Friesen, Mark; Coppersmith, S N; Eriksson, Mark A

    2014-07-03

    The similarities between gated quantum dots and the transistors in modern microelectronics--in fabrication methods, physical structure and voltage scales for manipulation--have led to great interest in the development of quantum bits (qubits) in semiconductor quantum dots. Although quantum dot spin qubits have demonstrated long coherence times, their manipulation is often slower than desired for important future applications, such as factoring. Furthermore, scalability and manufacturability are enhanced when qubits are as simple as possible. Previous work has increased the speed of spin qubit rotations by making use of integrated micromagnets, dynamic pumping of nuclear spins or the addition of a third quantum dot. Here we demonstrate a qubit that is a hybrid of spin and charge. It is simple, requiring neither nuclear-state preparation nor micromagnets. Unlike previous double-dot qubits, the hybrid qubit enables fast rotations about two axes of the Bloch sphere. We demonstrate full control on the Bloch sphere with π-rotation times of less than 100 picoseconds in two orthogonal directions, which is more than an order of magnitude faster than any other double-dot qubit. The speed arises from the qubit's charge-like characteristics, and its spin-like features result in resistance to decoherence over a wide range of gate voltages. We achieve full process tomography in our electrically controlled semiconductor quantum dot qubit, extracting high fidelities of 85 per cent for X rotations (transitions between qubit states) and 94 per cent for Z rotations (phase accumulation between qubit states).

  3. Quantum optics with semiconductor nanostructures

    CERN Document Server

    Jahnke, Frank

    2012-01-01

    A guide to the theory, application and potential of semiconductor nanostructures in the exploration of quantum optics. It offers an overview of resonance fluorescence emission.$bAn understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction...

  4. Buried waste integrated demonstration technology integration process

    International Nuclear Information System (INIS)

    Ferguson, J.S.; Ferguson, J.E.

    1992-04-01

    A Technology integration Process was developed for the Idaho National Energy Laboratories (INEL) Buried Waste Integrated Demonstration (BWID) Program to facilitate the transfer of technology and knowledge from industry, universities, and other Federal agencies into the BWID; to successfully transfer demonstrated technology and knowledge from the BWID to industry, universities, and other Federal agencies; and to share demonstrated technologies and knowledge between Integrated Demonstrations and other Department of Energy (DOE) spread throughout the DOE Complex. This document also details specific methods and tools for integrating and transferring technologies into or out of the BWID program. The document provides background on the BWID program and technology development needs, demonstrates the direction of technology transfer, illustrates current processes for this transfer, and lists points of contact for prospective participants in the BWID technology transfer efforts. The Technology Integration Process was prepared to ensure compliance with the requirements of DOE's Office of Technology Development (OTD)

  5. Single-step solution processing of small-molecule organic semiconductor field-effect transistors at high yield

    NARCIS (Netherlands)

    Yu, Liyang; Li, X.; Pavlica, E.; Loth, M.A.; Anthony, J.E.; Bratina, G.; Kjellander, B.K.C.; Gelinck, G.H.; Stutzmann, N.

    2011-01-01

    Here, we report a simple, alternative route towards high-mobility structures of the small-molecular semiconductor 5,11-bis(triethyl silylethynyl) anthradithiophene that requires one single processing step without the need for any post-deposition processing. The method relies on careful control of

  6. ICAT and the NASA technology transfer process

    Science.gov (United States)

    Rifkin, Noah; Tencate, Hans; Watkins, Alison

    1993-01-01

    This paper will address issues related to NASA's technology transfer process and will cite the example of using ICAT technologies in educational tools. The obstacles to effective technology transfer will be highlighted, viewing the difficulties in achieving successful transfers of ICAT technologies.

  7. Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process Technology

    International Nuclear Information System (INIS)

    Yamada, Isao; Toyoda, Noriaki; Matsuo, Jiro

    2008-01-01

    Processes employing clusters of ions comprised of a few hundred to many thousand atoms are now being developed into a new field of ion beam technology. Cluster-surface collisions produce important non-linear effects which are being applied to shallow junction formation, to etching and smoothing of semiconductors, metals, and dielectrics, to assisted formation of thin films with nano-scale accuracy, and to other surface modification applications. In 2000, a four year R and D project for development of industrial technology began in Japan under funding from the New Energy and Industrial Technology Development Organization (NEDO). Subjects of the projects are in areas of equipment development, semiconductor surface processing, high accuracy surface processing and high-quality film formation. In 2002, another major cluster ion beam project which emphasized nano-technology applications has started under a contract from the Ministry of Economy and Technology for Industry (METI). This METI project involved development related to size-selected cluster ion beam equipment and processes, and development of GCIB processes for very high rate etching and for zero damage etching of magnetic materials and compound semiconductor materials. This paper describes summery of the results.

  8. Based on Weibull Information Fusion Analysis Semiconductors Quality the Key Technology of Manufacturing Execution Systems Reliability

    Science.gov (United States)

    Huang, Zhi-Hui; Tang, Ying-Chun; Dai, Kai

    2016-05-01

    Semiconductor materials and Product qualified rate are directly related to the manufacturing costs and survival of the enterprise. Application a dynamic reliability growth analysis method studies manufacturing execution system reliability growth to improve product quality. Refer to classical Duane model assumptions and tracking growth forecasts the TGP programming model, through the failure data, established the Weibull distribution model. Combining with the median rank of average rank method, through linear regression and least squares estimation method, match respectively weibull information fusion reliability growth curve. This assumption model overcome Duane model a weakness which is MTBF point estimation accuracy is not high, through the analysis of the failure data show that the method is an instance of the test and evaluation modeling process are basically identical. Median rank in the statistics is used to determine the method of random variable distribution function, which is a good way to solve the problem of complex systems such as the limited sample size. Therefore this method has great engineering application value.

  9. Optimization of processing technology of Rhizoma Pinelliae ...

    African Journals Online (AJOL)

    soaking time and processing temperature on processing technology of Rhizoma ... Results: During the processing of Rhizoma Pinelliae Praeparatum, the size of influence of licorice .... Table 1: Factors and levels of orthogonal experiment.

  10. Very Low-Power Consumption Analog Pulse Processing ASIC for Semiconductor Radiation Detectors

    International Nuclear Information System (INIS)

    Wessendorf, K.O.; Lund, J.C.; Brunett, B.A.; Laguna, G.R.; Clements, J.W.

    1999-01-01

    We describe a very-low power consumption circuit for processing the pulses from a semiconductor radiation detector. The circuit was designed for use with a cadmium zinc telluride (CZT) detector for unattended monitoring of stored nuclear materials. The device is intended to be battery powered and operate at low duty-cycles over a long period of time. This system will provide adequate performance for medium resolution gamma-ray pulse-height spectroscopy applications. The circuit incorporates the functions of a charge sensitive preamplifier, shaping amplifier, and peak sample and hold circuit. An application specific integrated circuit (ASIC) version of the design has been designed, built and tested. With the exception of the input field effect transistor (FET), the circuit is constructed using bipolar components. In this paper the design philosophy and measured performance characteristics of the circuit are described

  11. Heat and mass transfer in semiconductor melts during single-crystal growth processes

    Science.gov (United States)

    Kakimoto, Koichi

    1995-03-01

    The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

  12. Radiative heat transfer analysis in pure water heater used for semiconductor processing

    International Nuclear Information System (INIS)

    Liu, L.H.; Kudo, K.; Mochida, A.; Ogawa, T.; Kadotani, K.

    2004-01-01

    A simplified one-dimensional model is presented to analyze the non-gray radiative transfer in pure water heater used in the rinsing processes within semiconductor production lines, and the ray-tracing method is extended to simulate the radiative heat transfer. To examine the accuracy of the simplified model, the distribution of radiation absorption is determined by the ray-tracing method based the simplified model and compared with the data obtained by three-dimensional non-gray model in combination with Monte Carlo method in reference, and the effects of the water thickness on the radiation absorption are analyzed. The results show that the simplified model has a good accuracy in solving the radiation absorption in the pure water heater. The radiation absorption increases with the water thickness, but when the water thickness is greater than 50 mm, the radiation absorption increases very slowly with the water thickness

  13. Studies of Thermophysical Properties of Metals and Semiconductors by Containerless Processing Under Microgravity

    Science.gov (United States)

    Seidel, A.; Soellner, W.; Stenzel, C.

    2012-01-01

    Electromagnetic levitation under microgravity provides unique opportunities for the investigation of liquid metals, alloys and semiconductors, both above and below their melting temperatures, with minimized disturbances of the sample under investigation. The opportunity to perform such experiments will soon be available on the ISS with the EML payload which is currently being integrated. With its high-performance diagnostics systems EML allows to measure various physical properties such as heat capacity, enthalpy of fusion, viscosity, surface tension, thermal expansion coefficient, and electrical conductivity. In studies of nucleation and solidification phenomena the nucleation kinetics, phase selection, and solidification velocity can be determined. Advanced measurement capabilities currently being studied include the measurement and control of the residual oxygen content of the process atmosphere and a complementary inductive technique to measure thermophysical properties.

  14. Evaluation of semiconductor gas sensor system for ethanol determination during fermentation processes

    Energy Technology Data Exchange (ETDEWEB)

    Picque, D; Corrieu, G

    1988-10-01

    Using commercial gas sensitive semi-conductors, an ethanol sensor has been constructed which operates by direct immersion in fermentation media. The calibration range of 0.1 to 10 or 13 % depending on the component. However, they are very often subjected to considerable drift (in the same case up to 10 %/h of the measured value). The electrical resistance of component may vary by a factor of 1 to 5 for a well-defined ethanol concentration. The effects of temperature changes in fermentation media are easily compensated. Other volatile compounds (methanol, ammonia,...) substantially affect component responses. Thus, all work on sensors requires careful calibration. Wine fermentation processes can be monitored satisfactorily, providing the sensor is recalibrated about every six hours.

  15. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

    Science.gov (United States)

    Moustakas, Theodore D.; Paiella, Roberto

    2017-10-01

    This paper reviews the device physics and technology of optoelectronic devices based on semiconductors of the GaN family, operating in the spectral regions from deep UV to Terahertz. Such devices include LEDs, lasers, detectors, electroabsorption modulators and devices based on intersubband transitions in AlGaN quantum wells (QWs). After a brief history of the development of the field, we describe how the unique crystal structure, chemical bonding, and resulting spontaneous and piezoelectric polarizations in heterostructures affect the design, fabrication and performance of devices based on these materials. The heteroepitaxial growth and the formation and role of extended defects are addressed. The role of the chemical bonding in the formation of metallic contacts to this class of materials is also addressed. A detailed discussion is then presented on potential origins of the high performance of blue LEDs and poorer performance of green LEDs (green gap), as well as of the efficiency reduction of both blue and green LEDs at high injection current (efficiency droop). The relatively poor performance of deep-UV LEDs based on AlGaN alloys and methods to address the materials issues responsible are similarly addressed. Other devices whose state-of-the-art performance and materials-related issues are reviewed include violet-blue lasers, ‘visible blind’ and ‘solar blind’ detectors based on photoconductive and photovoltaic designs, and electroabsorption modulators based on bulk GaN or GaN/AlGaN QWs. Finally, we describe the basic physics of intersubband transitions in AlGaN QWs, and their applications to near-infrared and terahertz devices.

  16. Fundamentals of semiconductor devices

    CERN Document Server

    Lindmayer, Joseph

    1965-01-01

    Semiconductor properties ; semiconductor junctions or diodes ; transistor fundamentals ; inhomogeneous impurity distributions, drift or graded-base transistors ; high-frequency properties of transistors ; band structure of semiconductors ; high current densities and mechanisms of carrier transport ; transistor transient response and recombination processes ; surfaces, field-effect transistors, and composite junctions ; additional semiconductor characteristics ; additional semiconductor devices and microcircuits ; more metal, insulator, and semiconductor combinations for devices ; four-pole parameters and configuration rotation ; four-poles of combined networks and devices ; equivalent circuits ; the error function and its properties ; Fermi-Dirac statistics ; useful physical constants.

  17. Process technologies for water desalination

    International Nuclear Information System (INIS)

    Ramilo, Lucia B.; Gomez de Soler, Susana M.; Coppari, Norberto R.

    2003-01-01

    The use of the nuclear energy for simultaneous electricity and potable water production is an attractive, technically feasible and safe alternative to fossil energy options. In Argentina the nuclear desalination option is being studied together with the alternative uses of the innovative advanced Argentinean CAREM reactor, in a research contract between CNEA and the IAEA to evaluate projects of nuclear desalination. This paper analyses the benefits and drawbacks of each desalination technology, the distinctive characteristics of the technology that fit better the different uses, and outlines the related antecedents of its application in the world. In this report a summarized description of those technologies is included by way of introduction, so as to highlight the main advantages and disadvantages of each of them. The improvements and innovations made in the last years for the different technologies are also described. (author)

  18. Combining people, processes, and technology.

    Science.gov (United States)

    Fishman, Julia

    2017-06-01

    Julia Fishman, managing director and vice-President, Clinical Strategy, at TeleTracking Technologies, discusses the in-use benefits of patient, staff, and asset tracking and flow technologies, arguing that their effective deployment across an NHS under considerable pressure on many fronts can free up more time to care, bring considerable cost and wider efficiencies, and help to address the perennial issue of 'bed blocking'.

  19. Perspectives on Multienzyme Process Technology

    DEFF Research Database (Denmark)

    Santacoloma, Paloma A.; Woodley, John M.

    2014-01-01

    . One consequence is that decisions about the format of the biocatalyst and reactor type as well as the process flowsheet require more extensive knowledge. In this chapter, some of the background to these decisions and decision-making tools to help establish effective multienzyme processes in a timely......There is little doubt that chemical processing of the future will involve an increasing number of biocatalytic processes using more than one enzyme. There are good reasons for developing such innovative biocatalytic processes and interesting new biocatalyst and process options will be introduced...

  20. Process technologies for water desalination

    International Nuclear Information System (INIS)

    Ramilo, Lucia B.; Gomez de Soler, Susana M.; Coppari, Norberto R.

    2003-01-01

    The use of the nuclear energy for simultaneous electricity and potable water production is an attractive, technically feasible, and safe alternative to fossil energy options. In Argentina the nuclear desalination option is being studied together with the alternative uses of the innovative advanced Argentinean CAREM reactor, in the research contract CNEA - IAEA to evaluate projects of nuclear desalination. The objective and scope of this work is to know the advantages and disadvantages of each desalination technology, distinctive characteristics of each of them, that make them adapt better to different uses and outline conditions and analysis of related antecedents of its use in the world. In this report a summarized description of those technologies is included by way of introduction, so as to highlight the main advantages and disadvantages of each of them. The improvements and innovations found in the last years for the different technologies are also included. (author)

  1. Identifying the hazard characteristics of powder byproducts generated from semiconductor fabrication processes.

    Science.gov (United States)

    Choi, Kwang-Min; An, Hee-Chul; Kim, Kwan-Sick

    2015-01-01

    Semiconductor manufacturing processes generate powder particles as byproducts which potentially could affect workers' health. The chemical composition, size, shape, and crystal structure of these powder particles were investigated by scanning electron microscopy equipped with an energy dispersive spectrometer, Fourier transform infrared spectrometry, and X-ray diffractometry. The powders generated in diffusion and chemical mechanical polishing processes were amorphous silica. The particles in the chemical vapor deposition (CVD) and etch processes were TiO(2) and Al(2)O(3), and Al(2)O(3) particles, respectively. As for metallization, WO(3), TiO(2), and Al(2)O(3) particles were generated from equipment used for tungsten and barrier metal (TiN) operations. In photolithography, the size and shape of the powder particles showed 1-10 μm and were of spherical shape. In addition, the powders generated from high-current and medium-current processes for ion implantation included arsenic (As), whereas the high-energy process did not include As. For all samples collected using a personal air sampler during preventive maintenance of process equipment, the mass concentrations of total airborne particles were particles less than 10 μm in diameter) using direct-reading aerosol monitor by area sampling were between 0.00 and 0.02 μg/m(3). Although the exposure concentration of airborne particles during preventive maintenance is extremely low, it is necessary to make continuous improvements to the process and work environment, because the influence of chronic low-level exposure cannot be excluded.

  2. Oxygen and carbon transfer during solidification of semiconductor grade silicon in different processes

    Science.gov (United States)

    Ribeyron, P. J.; Durand, F.

    2000-03-01

    A model is established for comparing the solute distribution resulting from four solidification processes currently applied to semiconductor grade silicon: Czochralski pulling (CZ), floating zone (FZ), 1D solidification and electromagnetic continuous pulling (EMCP). This model takes into account solid-liquid interface exchange, evaporation to or contamination by the gas phase, container dissolution, during steady-state solidification, and in the preliminary preparation of the melt. For simplicity, the transfers are treated in the crude approximation of perfectly mixed liquid and boundary layers. As a consequence, only the axial ( z) distribution can be represented. Published data on oxygen and carbon transfer give a set of acceptable values for the thickness of the boundary layers. In the FZ and EMCP processes, oxygen evaporation can change the asymptotic behaviour of the reference Pfann law. In CZ and in 1D-solidification, a large variety of solute profile curves can be obtained, because they are very sensitive to the balance between crucible dissolution and evaporation. The CZ process clearly brings supplementary degrees of freedom via the geometry of the crucible, important for the dissolution phenomena, and via the rotation rate of the crystal and of the crucible, important for acting on transfer kinetics.

  3. Introduction to Innovative Food Processing and Technology

    OpenAIRE

    Tokusoglu, Ozlem

    2015-01-01

    Consumers, the food industry and the regulatory agencies demand the innovative technologies to provide safe and stable foods. Nonthermal processing technologies offer unprecedented opportunities and challenges for the food industry to market safe, high quality health-promoting foods. Those innovative food processing is often perceived as an alternative to thermal food processing, yet there are many nonthermal preparatory unit operations as well as food processing and preservation opportunitie...

  4. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    Energy Technology Data Exchange (ETDEWEB)

    Chang, J-S.; Urashima, K. [McMaster Univ., McIARS and Dept. Eng. Phys., Hamilton, Ontario (Canada)

    2009-07-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C{sub 2}F{sub 6} (2000ppm)/ CF{sub 4}(1000ppm)/ N{sub 2}O(1000ppm)/ N{sub 2}/ Air mixture, 54% of C{sub 2}F{sub 6} and 32% of CF{sub 4} were decomposed by the plasma reactor and 100% of C{sub 2}F{sub 6} and 98% of CF{sub 4} were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF{sub 3} (2000ppm)/ SiF{sub 4}(1000ppm)/ N{sub 2}O(200ppm)/ N{sub 2}/ Air mixture, 92% of NF{sub 3} and 32% of SiF{sub 4} were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  5. Abatement of global warming gas emissions from semiconductor manufacturing processes by non-thermal plasma-catalyst systems

    International Nuclear Information System (INIS)

    Chang, J-S.; Urashima, K.

    2009-01-01

    Emission of various hazardous air pollutants (HAPs) and greenhouse gases including perfluoro-compounds (PFCs) from semiconductor industries may cause significant impact on human health and the global environment, has attracted much public attention. In this paper, an application of nonthermal plasma-adsorbent system for a removal of PFCs emission from semiconductor process flue gases is experimentally investigated. The non-thermal plasma reactor used is the ferro-electric packed-bed type barrier discharge plasma and adsorbent reactor used is Zeolite bed reactor. The results show that for a simulated semiconductor process flue gas with C 2 F 6 (2000ppm)/ CF 4 (1000ppm)/ N 2 O(1000ppm)/ N 2 / Air mixture, 54% of C 2 F 6 and 32% of CF 4 were decomposed by the plasma reactor and 100% of C 2 F 6 and 98% of CF 4 were removed by plasma reactor/Zeolite adsorbent hybrid system. For a simulated semiconductor process flue gas with NF 3 (2000ppm)/ SiF 4 (1000ppm)/ N 2 O(200ppm)/ N 2 / Air mixture, 92% of NF 3 and 32% of SiF 4 were decomposed by the plasma reactor and total (100%) removal of the pollutant gases was achieved by plasma reactor/Zeolite adsorbent hybrid system. (author)

  6. TECHNOLOGIES OF BRAIN IMAGES PROCESSING

    Directory of Open Access Journals (Sweden)

    O.M. Klyuchko

    2017-12-01

    Full Text Available The purpose of present research was to analyze modern methods of processing biological images implemented before storage in databases for biotechnological purposes. The databases further were incorporated into web-based digital systems. Examples of such information systems were described in the work for two levels of biological material organization; databases for storing data of histological analysis and of whole brain were described. Methods of neuroimaging processing for electronic brain atlas were considered. It was shown that certain pathological features can be revealed in histological image processing. Several medical diagnostic techniques (for certain brain pathologies, etc. as well as a few biotechnological methods are based on such effects. Algorithms of image processing were suggested. Electronic brain atlas was conveniently for professionals in different fields described in details. Approaches of brain atlas elaboration, “composite” scheme for large deformations as well as several methods of mathematic images processing were described as well.

  7. The Semiconductor Industry and Emerging Technologies: A Study Using a Modified Delphi Method

    Science.gov (United States)

    Jordan, Edgar A.

    2010-01-01

    The purpose of this qualitative descriptive study was to determine what leaders in the semiconductor industry thought the future of computing would look like and what emerging materials showed the most promise to overcome the current theoretical limit of 10 nanometers for silicon dioxide. The researcher used a modified Delphi technique in two…

  8. The process for technology transfer in Baltimore

    Science.gov (United States)

    Golden, T. S.

    1978-01-01

    Ingredients essential for a successful decision process relative to proper technological choices for a large city were determined during four years of experience in the NASA/Baltimore Applications Project. The general approach, rationale, and process of technology transfer are discussed.

  9. Radioactive Dry Process Material Treatment Technology Development

    Energy Technology Data Exchange (ETDEWEB)

    Park, J. J.; Hung, I. H.; Kim, K. K. (and others)

    2007-06-15

    The project 'Radioactive Dry Process Material Treatment Technology Development' aims to be normal operation for the experiments at DUPIC fuel development facility (DFDF) and safe operation of the facility through the technology developments such as remote operation, maintenance and pair of the facility, treatment of various high level process wastes and trapping of volatile process gases. DUPIC Fuel Development Facility (DFDF) can accommodate highly active nuclear materials, and now it is for fabrication of the oxide fuel by dry process characterizing the proliferation resistance. During the second stage from march 2005 to February 2007, we carried out technology development of the remote maintenance and the DFDF's safe operation, development of treatment technology for process off-gas, and development of treatment technology for PWR cladding hull and the results was described in this report.

  10. Polycrystalline silicon ring resonator photodiodes in a bulk complementary metal-oxide-semiconductor process.

    Science.gov (United States)

    Mehta, Karan K; Orcutt, Jason S; Shainline, Jeffrey M; Tehar-Zahav, Ofer; Sternberg, Zvi; Meade, Roy; Popović, Miloš A; Ram, Rajeev J

    2014-02-15

    We present measurements on resonant photodetectors utilizing sub-bandgap absorption in polycrystalline silicon ring resonators, in which light is localized in the intrinsic region of a p+/p/i/n/n+ diode. The devices, operating both at λ=1280 and λ=1550  nm and fabricated in a complementary metal-oxide-semiconductor (CMOS) dynamic random-access memory emulation process, exhibit detection quantum efficiencies around 20% and few-gigahertz response bandwidths. We observe this performance at low reverse biases in the range of a few volts and in devices with dark currents below 50 pA at 10 V. These results demonstrate that such photodetector behavior, previously reported by Preston et al. [Opt. Lett. 36, 52 (2011)], is achievable in bulk CMOS processes, with significant improvements with respect to the previous work in quantum efficiency, dark current, linearity, bandwidth, and operating bias due to additional midlevel doping implants and different material deposition. The present work thus offers a robust realization of a fully CMOS-fabricated all-silicon photodetector functional across a wide wavelength range.

  11. Impact of process temperature on GaSb metal-oxide-semiconductor interface properties fabricated by ex-situ process

    Energy Technology Data Exchange (ETDEWEB)

    Yokoyama, Masafumi, E-mail: yokoyama@mosfet.t.u-tokyo.ac.jp; Takenaka, Mitsuru; Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); JST-CREST, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Asakura, Yuji [Department of Electrical Engineering and Information Systems, The University of Tokyo, Yayoi 2-11-16, Bunkyo, Tokyo 113-0032 (Japan); Yokoyama, Haruki [NTT Photonics Laboratories, NTT Corporation, Atsugi 243-0198 (Japan)

    2014-06-30

    We have studied the impact of process temperature on interface properties of GaSb metal-oxide-semiconductor (MOS) structures fabricated by an ex-situ atomic-layer-deposition (ALD) process. We have found that the ALD temperature strongly affects the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The Al{sub 2}O{sub 3}/GaSb MOS interfaces fabricated at the low ALD temperature of 150 °C have the minimum interface-trap density (D{sub it}) of ∼4.5 × 10{sup 13 }cm{sup −2} eV{sup −1}. We have also found that the post-metalization annealing at temperature higher than 200 °C degrades the Al{sub 2}O{sub 3}/GaSb MOS interface properties. The low-temperature process is preferable in fabricating GaSb MOS interfaces in the ex-situ ALD process to avoid the high-temperature-induced degradations.

  12. Separation process using microchannel technology

    Science.gov (United States)

    Tonkovich, Anna Lee [Dublin, OH; Perry, Steven T [Galloway, OH; Arora, Ravi [Dublin, OH; Qiu, Dongming [Bothell, WA; Lamont, Michael Jay [Hilliard, OH; Burwell, Deanna [Cleveland Heights, OH; Dritz, Terence Andrew [Worthington, OH; McDaniel, Jeffrey S [Columbus, OH; Rogers, Jr; William, A [Marysville, OH; Silva, Laura J [Dublin, OH; Weidert, Daniel J [Lewis Center, OH; Simmons, Wayne W [Dublin, OH; Chadwell, G Bradley [Reynoldsburg, OH

    2009-03-24

    The disclosed invention relates to a process and apparatus for separating a first fluid from a fluid mixture comprising the first fluid. The process comprises: (A) flowing the fluid mixture into a microchannel separator in contact with a sorption medium, the fluid mixture being maintained in the microchannel separator until at least part of the first fluid is sorbed by the sorption medium, removing non-sorbed parts of the fluid mixture from the microchannel separator; and (B) desorbing first fluid from the sorption medium and removing desorbed first fluid from the microchannel separator. The process and apparatus are suitable for separating nitrogen or methane from a fluid mixture comprising nitrogen and methane. The process and apparatus may be used for rejecting nitrogen in the upgrading of sub-quality methane.

  13. The Center for Environmental Technology Innovative Technology Screening Process

    International Nuclear Information System (INIS)

    Bertrand, C.M.

    1995-02-01

    The Center for Environmental Technology's (CET) mission is to provide a fully integrated system for accelerated evaluation, development, commercialization, and public acceptance of creative environmental solutions which match the foremost demands in today's environmentally sensitive world. In short, CET will create a means to provide quick, effective solutions for environmental needs. To meet this mission objective, CET has created a unique and innovative approach to eliminating the usual barriers in developing and testing environmental technologies. The approach paves the way for these emerging, cutting-edge technologies by coordinating environmental restoration and waste management activities of industry, universities, and the government to: efficiently and effectively transfer technology to these users, provide market-driven, cost-effective technology programs to the public and DOE, and aid in developing innovative ideas by initiating efforts between DOE facilities and private industry. The central part to this mission is selecting and evaluating specific innovative technologies for demonstration and application at United States Department of Energy (DOE) installations. The methodology and criteria used for this selection, which is called the CET Innovative Technology Screening Process, is the subject of this paper. The selection criteria used for the screening process were modeled after other DOE technology transfer programs and were further developed by CET's Technology Screening and Evaluation Board (TSEB). The process benefits both CET and the proposing vendors by providing objective selection procedures based on predefined criteria. The selection process ensures a rapid response to proposing vendors, all technologies will have the opportunity to enter the selection process, and all technologies are evaluated on the same scale and with identical criteria

  14. Process Guide for Deburring Technologies

    Energy Technology Data Exchange (ETDEWEB)

    Frey, David L.

    2012-10-25

    This report is an updated and consolidated view of the current deburring processes at the Kansas City Plant (KCP). It includes specific examples of current burr problems and the methods used for their detection. Also included is a pictorial review of the large variety of available deburr tools, along with a complete numerical listing of existing tools and their descriptions. The process for deburring all the major part feature categories is discussed.

  15. Portal monitoring technology control process

    International Nuclear Information System (INIS)

    York, R.L.

    1998-01-01

    Portal monitors are an important part of the material protection, control, and accounting (MPC and A) programs in Russia and the US. Although portal monitors are only a part of an integrated MPC and A system, they are an effective means of controlling the unauthorized movement of special nuclear material (SNM). Russian technical experts have gained experience in the use of SNM portal monitors from US experts ad this has allowed them to use the monitors more effectively. Several Russian institutes and companies are designing and manufacturing SNM portal monitors in Russia. Interactions between Russian and US experts have resulted in improvements to the instruments. SNM portal monitor technology has been effectively transferred from the US to Russia and should be a permanent part of the Russian MPC and A Program. Progress in the implementation of the monitors and improvements to how they are used are discussed

  16. Novel process windows, part 1: Boosted micro process technology

    NARCIS (Netherlands)

    Hessel, V.; Wang, Q.

    2011-01-01

    Novel Process Windows (NPW) is the use of highly intensified, unusual and typically harsh process conditions to boost micro process technology and flow chemistry for the production of high-added value fine chemicals, pharmaceuticals, etc.. It is far from conventional processing and also from

  17. Technology entrepreneurship : a process framework

    NARCIS (Netherlands)

    Zhou, Zhao

    2013-01-01

    Scholars are in search of an integrated perspective to explain entrepreneurship in a coherent way. This study sets to contribute to this search with a process framework for understanding similar patterns of entrepreneurship actions over time in different settings. This research uses the multi-case

  18. Electrochromic Windows: Advanced Processing Technology

    Energy Technology Data Exchange (ETDEWEB)

    SAGE Electrochromics, Inc

    2006-12-13

    This project addresses the development of advanced fabrication capabilities for energy saving electrochromic (EC) windows. SAGE EC windows consist of an inorganic stack of thin films deposited onto a glass substrate. The window tint can be reversibly changed by the application of a low power dc voltage. This property can be used to modulate the amount of light and heat entering buildings (or vehicles) through the glazings. By judicious management of this so-called solar heat gain, it is possible to derive significant energy savings due to reductions in heating lighting, and air conditioning (HVAC). Several areas of SAGE’s production were targeted during this project to allow significant improvements to processing throughput, yield and overall quality of the processing, in an effort to reduce the cost and thereby improve the market penetration. First, the overall thin film process was optimized to allow a more robust set of operating points to be used, thereby maximizing the yield due to the thin film deposition themselves. Other significant efforts aimed at improving yield were relating to implementing new procedures and processes for the manufacturing process, to improve the quality of the substrate preparation, and the quality of the IGU fabrication. Furthermore, methods for reworking defective devices were developed, to enable devices which would otherwise be scrapped to be made into useful product. This involved the in-house development of some customized equipment. Finally, the improvements made during this project were validated to ensure that they did not impact the exceptional durability of the SageGlass® products. Given conservative estimates for cost and market penetration, energy savings due to EC windows in residences in the US are calculated to be of the order 0.026 quad (0.026×1015BTU/yr) by the year 2017.

  19. Semiconductor physics an introduction

    CERN Document Server

    Seeger, Karlheinz

    1999-01-01

    Semiconductor Physics - An Introduction - is suitable for the senior undergraduate or new graduate student majoring in electrical engineering or physics. It will also be useful to solid-state scientists and device engineers involved in semiconductor design and technology. The text provides a lucid account of charge transport, energy transport and optical processes, and a detailed description of many devices. It includes sections on superlattices and quantum well structures, the effects of deep-level impurities on transport, the quantum Hall effect and the calculation of the influence of a magnetic field on the carrier distribution function. This 6th edition has been revised and corrected, and new sections have been added to different chapters.

  20. Plasma processing: Technologies and applications

    International Nuclear Information System (INIS)

    Naddaf, M.; Saloum, S.

    2005-01-01

    This study aims to present the fundamentals of physics of plasmas, methods of generation, diagnostics, and applications for processing of materials. The first chapter defines plasma in general as well as its main parameters, the most important differential equations in plasma physics, and classifies the types of plasmas. the various methods and techniques to create and sustain plasma are presented in the second chapter. Chapter 3 focuses on plasma diagnostic methods and tools. While chapter 4 deals with applications of plasma processing such as; surface modification of materials, plasma ashing and etching, plasma cutting, and the environmental applications of plasma. Plasma polymerization and its various applications have been presented in more details in the last chapter. (Author)

  1. Tuning polymorphism and orientation in organic semiconductor thin films via post-deposition processing.

    Science.gov (United States)

    Hiszpanski, Anna M; Baur, Robin M; Kim, Bumjung; Tremblay, Noah J; Nuckolls, Colin; Woll, Arthur R; Loo, Yueh-Lin

    2014-11-05

    Though both the crystal structure and molecular orientation of organic semiconductors are known to impact charge transport in thin-film devices, separately accessing different polymorphs and varying the out-of-plane molecular orientation is challenging, typically requiring stringent control over film deposition conditions, film thickness, and substrate chemistry. Here we demonstrate independent tuning of the crystalline polymorph and molecular orientation in thin films of contorted hexabenzocoronene, c-HBC, during post-deposition processing without the need to adjust deposition conditions. Three polymorphs are observed, two of which have not been previously reported. Using our ability to independently tune the crystal structure and out-of-plane molecular orientation in thin films of c-HBC, we have decoupled and evaluated the effects that molecular packing and orientation have on device performance in thin-film transistors (TFTs). In the case of TFTs comprising c-HBC, polymorphism and molecular orientation are equally important; independently changing either one affects the field-effect mobility by an order of magnitude.

  2. Solar energy harvesting by magnetic-semiconductor nanoheterostructure in water treatment technology.

    Science.gov (United States)

    Mahmoodi, Vahid; Bastami, Tahereh Rohani; Ahmadpour, Ali

    2018-03-01

    Photocatalytic degradation of toxic organic pollutants in the wastewater using dispersed semiconductor nanophotocatalysts has a number of advantages such as high activity, cost effectiveness, and utilization of free solar energy. However, it is difficult to recover and recycle nanophotocatalysts since the fine dispersed nanoparticles are easily suspended in waters. Furthermore, a large amount of photocatalysts will lead to color contamination. Thus, it is necessary to prepare photocatalysts with easy separation for the reusable application. To take advantage of high photocatalysis activity and reusability, magnetic photocatalysts with separation function were utilized. In this review, the photocatalytic principle, structure, and application of the magnetic-semiconductor nanoheterostructure photocatalysts under solar light are evaluated. Graphical abstract ᅟ.

  3. Fiscal 1999 research report on long-term energy technology strategy. Basic research on industrial technology strategy (Individual technology strategy). Machine industry technology field (Semiconductor equipment); 1999 nendo choki energy gijutsu senryaku nado ni kansuru chosa hokokusho. Sangyo gijutsu senryaku sakutei kiban chosa (bun'yabetsu gijutsu senryaku) kikai sangyo gijutsu bun'ya (handotai seizo sochi bun'ya)

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2000-03-01

    This report summarizes the fiscal 1999 basic research result on industrial technology strategy of a semiconductor equipment field, viewing until 5-10 years after. For the future semiconductor industry, the favorable cycling of creation of new demands through performance improvement, and further technology innovation through market expansion is essential absolutely. Since technology development is followed by investment, not only the performance of each equipment but also the higher productivity and cost balance of the whole factory are essential. Self-intelligent function and networking are thus necessary for the equipment. As measures for environment preservation and energy saving, such innovative technologies are required as recycling, reuse, reaction process improvement and alternative technology. Because of diverse final products and a short life time of products, a large-scale collective investment is becoming difficult. A mini-line sequential investment production system according to demand scales is under investigation. Some issues such as micro-technology, realization of 300mm wafer, modularization, CIM, reliability and standardization are also described. (NEDO)

  4. European consumers' acceptance of beef processing technologies

    DEFF Research Database (Denmark)

    de Barcellos, Marcia Dutra; Kügler, Jens Oliver; Grunert, Klaus G.

    2010-01-01

    The use of new technologies in beef production chains may affect consumers' opinion of meat products. A qualitative study was performed to investigate consumers' acceptance of seven beef processing technologies: marinating by injection aiming for increased 1) healthiness; 2) safety; and 3) eating...... adults (19-60 years old) participated in eight focus groups in Spain, France, Germany and the UK. Results suggested a relationship between acceptance of new beef products, technology familiarity and perceived risks related to its application. Excessive manipulation and fear of moving away from 'natural......' beef were considered negative outcomes of technological innovations. Beef processing technologies were predominantly perceived as valuable options for convenience shoppers and less demanding consumers. Overall, respondents supported the development of 'non-invasive' technologies that were able...

  5. Optimal design of advanced distillation configuration for enhanced energy efficiency of waste solvent recovery process in semiconductor industry

    International Nuclear Information System (INIS)

    Chaniago, Yus Donald; Minh, Le Quang; Khan, Mohd Shariq; Koo, Kee-Kahb; Bahadori, Alireza; Lee, Moonyong

    2015-01-01

    Highlights: • Thermally coupled distillation process is proposed for waste solvent recovery. • A systematic optimization procedure is used to optimize distillation columns. • Response surface methodology is applied to optimal design of distillation column. • Proposed advanced distillation allows energy efficient waste solvent recovery. - Abstract: The semiconductor industry is one of the largest industries in the world. On the other hand, the huge amount of solvent used in the industry results in high production cost and potential environmental damage because most of the valuable chemicals discharged from the process are incinerated at high temperatures. A distillation process is used to recover waste solvent, reduce the production-related costs and protect the environment from the semiconductor industrial waste. Therefore, in this study, a distillation process was used to recover the valuable chemicals from semiconductor industry discharge, which otherwise would have been lost to the environment. The conventional sequence of distillation columns, which was optimized using the Box and sequential quadratic programming method for minimum energy objectives, was used. The energy demands of a distillation problem may have a substantial influence on the profitability of a process. A thermally coupled distillation and heat pump-assisted distillation sequence was implemented to further improve the distillation performance. Finally, a comparison was made between the conventional and advanced distillation sequences, and the optimal conditions for enhancing recovery were determined. The proposed advanced distillation configuration achieved a significant energy saving of 40.5% compared to the conventional column sequence

  6. Micro-Raman spectroscopy as a tool for the characterization of silicon carbide in power semiconductor material processing

    Science.gov (United States)

    De Biasio, M.; Kraft, M.; Schultz, M.; Goller, B.; Sternig, D.; Esteve, R.; Roesner, M.

    2017-05-01

    Silicon carbide (SiC) is a wide band-gap semi-conductor material that is used increasingly for high voltage power devices, since it has a higher breakdown field strength and better thermal conductivity than silicon. However, in particular its hardness makes wafer processing difficult and many standard semi-conductor processes have to be specially adapted. We measure the effects of (i) mechanical processing (i.e. grinding of the backside) and (ii) chemical and thermal processing (i.e. doping and annealing), using confocal microscopy to measure the surface roughness of ground wafers and micro-Raman spectroscopy to measure the stresses induced in the wafers by grinding. 4H-SiC wafers with different dopings were studied before and after annealing, using depth-resolved micro-Raman spectroscopy to observe how doping and annealing affect: i.) the damage and stresses induced on the crystalline structure of the samples and ii.) the concentration of free electrical carriers. Our results show that mechanical, chemical and thermal processing techniques have effects on this semiconductor material that can be observed and characterized using confocal microscopy and high resolution micro Raman spectroscopy.

  7. National Security Technology Incubator Evaluation Process

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2007-12-31

    This report describes the process by which the National Security Technology Incubator (NSTI) will be evaluated. The technology incubator is being developed as part of the National Security Preparedness Project (NSPP), funded by a Department of Energy (DOE)/National Nuclear Security Administration (NNSA) grant. This report includes a brief description of the components, steps, and measures of the proposed evaluation process. The purpose of the NSPP is to promote national security technologies through business incubation, technology demonstration and validation, and workforce development. The NSTI will focus on serving businesses with national security technology applications by nurturing them through critical stages of early development. An effective evaluation process of the NSTI is an important step as it can provide qualitative and quantitative information on incubator performance over a given period. The vision of the NSTI is to be a successful incubator of technologies and private enterprise that assist the NNSA in meeting new challenges in national safety and security. The mission of the NSTI is to identify, incubate, and accelerate technologies with national security applications at various stages of development by providing hands-on mentoring and business assistance to small businesses and emerging or growing companies. To achieve success for both incubator businesses and the NSTI program, an evaluation process is essential to effectively measure results and implement corrective processes in the incubation design if needed. The evaluation process design will collect and analyze qualitative and quantitative data through performance evaluation system.

  8. Quantum information processing : science & technology.

    Energy Technology Data Exchange (ETDEWEB)

    Horton, Rebecca; Carroll, Malcolm S.; Tarman, Thomas David

    2010-09-01

    Qubits demonstrated using GaAs double quantum dots (DQD). The qubit basis states are the (1) singlet and (2) triplet stationary states. Long spin decoherence times in silicon spurs translation of GaAs qubit in to silicon. In the near term the goals are: (1) Develop surface gate enhancement mode double quantum dots (MOS & strained-Si/SiGe) to demonstrate few electrons and spin read-out and to examine impurity doped quantum-dots as an alternative architecture; (2) Use mobility, C-V, ESR, quantum dot performance & modeling to feedback and improve upon processing, this includes development of atomic precision fabrication at SNL; (3) Examine integrated electronics approaches to RF-SET; (4) Use combinations of numerical packages for multi-scale simulation of quantum dot systems (NEMO3D, EMT, TCAD, SPICE); and (5) Continue micro-architecture evaluation for different device and transport architectures.

  9. Combustion process science and technology

    Science.gov (United States)

    Hale, Robert R.

    1989-01-01

    An important and substantial area of technical work in which noncontact temperature measurement (NCTM) is desired is that involving combustion process research. In the planning for this workshop, it was hoped that W. Serignano would provide a briefing regarding the experimental requirements for thermal measurements to support such research. The particular features of thermal measurement requirements included those describing the timeline for combustion experiments, the requirements for thermal control and diagnostics of temperature and other related thermal measurements and the criticality to the involved science to parametric features of measurement capability including precision, repeatability, stability, and resolution. In addition, it was hoped that definitions could be provided which characterize the needs for concurrent imaging as it relates to science observations during the conduct of experimentation.

  10. Technological innovation: a structrational process view

    NARCIS (Netherlands)

    Fehse, K.I.A.; Wognum, P.M.

    1999-01-01

    The central aim of our research is to describe and explain how the introduction of a computer-based technology, which supports co-operative work in engineering departments, induces change processes. The employment of computer-based technologies in product development organisations to support

  11. Roadmap for Process Equipment Materials Technology

    Energy Technology Data Exchange (ETDEWEB)

    none,

    2003-10-01

    This Technology Roadmap addresses the ever-changing material needs of the chemical and allied process industries, and the energy, economic and environmental burdens associated with corrosion and other materials performance and lifetime issues. This Technology Roadmap outlines the most critical of these R&D needs, and how they can impact the challenges facing today’s materials of construction.

  12. Process analytical technology (PAT) for biopharmaceuticals

    DEFF Research Database (Denmark)

    Glassey, Jarka; Gernaey, Krist; Clemens, Christoph

    2011-01-01

    Process analytical technology (PAT), the regulatory initiative for building in quality to pharmaceutical manufacturing, has a great potential for improving biopharmaceutical production. The recommended analytical tools for building in quality, multivariate data analysis, mechanistic modeling, novel...

  13. TECHNOLOGICAL PROCESS OF EFFLUENTS DEPHENOLYSATION

    Directory of Open Access Journals (Sweden)

    В. Трачевський

    2011-02-01

    Full Text Available The one of the important physical factors impacting on the environmental safety of industrial wastewater generated in the production of paints and varnishes is considered. Identification wastewater formation sources, composition, its amount in a particular type of resin is an essential point for developing methods of cleaning industrial wastewater treatment design and industrial plants. Deep cleaning of wastewater from phenol is a major challenge. Studies that mostly focused on the known methods of disposal of waste waters from phenol have been analyzed. It was shown that the shortcomings of many methods of sewage treatment of phenols by condensation at atmospheric pressure are the long duration of the process, significant cost of heat, and large residual phenol concentration in water, respectively. The most effective method of reducing the concentration of phenol in waste water is its oxidation in MnO2 suspension. The interaction of manganese oxides with sulfuric acid produces oxygen, which can oxidise phenol contained in the waste water. As a result of wastewater treatment of phenolic resins by manganese oxides in acidic sulfate medium phenol concentration  was decreased by 98.6 - 99.6%.

  14. Development of functionally-oriented technological processes of electroerosive processing

    Science.gov (United States)

    Syanov, S. Yu

    2018-03-01

    The stages of the development of functionally oriented technological processes of electroerosive processing from the separation of the surfaces of parts and their service functions to the determination of the parameters of the process of electric erosion, which will provide not only the quality parameters of the surface layer, but also the required operational properties, are described.

  15. Treatment of exhaust gas from the semiconductor manufacturing process. 3; Handotai seizo sochi kara no hai gas shori. 3

    Energy Technology Data Exchange (ETDEWEB)

    Fukunaga, A. [Ebara Research Co. Ltd., Kanagawa (Japan); Mori, Y.; Osato, M.; Tsujimura, M. [Ebara Corp., Tokyo (Japan)

    1995-10-20

    Demand has been building up for an individual dry type scrubber for treating exhaust gas from the semiconductor manufacturing process. Some factors for the wide acceptance of such a scrubber would be the capability for complete treatment, easy maintenance and safety features, etc. Practical gas analysis and optimum scrubbing techniques would have to be applied, as well as effective monitoring, alarm, and fail-safe techniques. The overall exhaust gas line, i.e. the line connecting the scrubber system and the upstream process, including that extending to pump system, has to be fully considered for enabling effective scrubbing performance. Such factors, which have until now not been given any priority, would have to be fully studied for the development of a practical, individual dry type scrubber. Cooperation on this matter from the semiconductor manufacturing industry would also be essential. 6 refs., 3 figs., 5 tabs.

  16. Wafer level 3-D ICs process technology

    CERN Document Server

    Tan, Chuan Seng; Reif, L Rafael

    2009-01-01

    This book focuses on foundry-based process technology that enables the fabrication of 3-D ICs. The core of the book discusses the technology platform for pre-packaging wafer lever 3-D ICs. However, this book does not include a detailed discussion of 3-D ICs design and 3-D packaging. This is an edited book based on chapters contributed by various experts in the field of wafer-level 3-D ICs process technology. They are from academia, research labs and industry.

  17. Friction Stir Welding Process: A Green Technology

    OpenAIRE

    Esther T. Akinlabi; Stephen A. Akinlabi

    2012-01-01

    Friction Stir Welding (FSW) is a solid state welding process invented and patented by The Welding Institute (TWI) in the United Kingdom in 1991 for butt and lap welding of metals and plastics. This paper highlights the benefits of friction stir welding process as an energy efficient and a green technology process in the field of welding. Compared to the other conventional welding processes, its benefits, typical applications and its use in joining similar and dissimilar materia...

  18. Directed-energy process technology efforts

    Science.gov (United States)

    Alexander, P.

    1985-01-01

    A summary of directed-energy process technology for solar cells was presented. This technology is defined as directing energy or mass to specific areas on solar cells to produce a desired effect in contrast to exposing a cell to a thermal or mass flow environment. Some of these second generation processing techniques are: ion implantation; microwave-enhanced chemical vapor deposition; rapid thermal processing; and the use of lasers for cutting, assisting in metallization, assisting in deposition, and drive-in of liquid dopants. Advantages of directed energy techniques are: surface heating resulting in the bulk of the cell material being cooler and unchanged; better process control yields; better junction profiles, junction depths, and metal sintering; lower energy consumption during processing and smaller factory space requirements. These advantages should result in higher-efficiency cells at lower costs. The results of the numerous contracted efforts were presented as well as the application potentials of these new technologies.

  19. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1982-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices in which the device is rapidly heated to a temperature between 450 and 900 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. (author)

  20. Compact Submillimeter-Wave Receivers Made with Semiconductor Nano-Fabrication Technologies

    Science.gov (United States)

    Jung, C.; Thomas, B.; Lee, C.; Peralta, A.; Chattopadhyay, G.; Gill, J.; Cooper, K.; Mehdi, I.

    2011-01-01

    Advanced semiconductor nanofabrication techniques are utilized to design, fabricate and demonstrate a super-compact, low-mass (<10 grams) submillimeter-wave heterodyne front-end. RF elements such as waveguides and channels are fabricated in a silicon wafer substrate using deep-reactive ion etching (DRIE). Etched patterns with sidewalls angles controlled with 1 deg precision are reported, while maintaining a surface roughness of better than 20 nm rms for the etched structures. This approach is being developed to build compact 2-D imaging arrays in the THz frequency range.

  1. Process monitoring in high volume semiconductor production environment with in-fab TXRF

    International Nuclear Information System (INIS)

    Ghatak-Roy, A.R.; Hossain, T.Z.

    2000-01-01

    After its introduction in the 80's, TXRF has become an important tool for surface contamination analysis. This is particularly true for the semiconductor industries, where monitoring trace level contamination in ultra clean environment is absolutely necessary for successful device production with reasonable yield. In FAB 25 of the Advanced Micro Devices in Austin, we have installed two TXRF tools, which are model TXRF3750 manufactured by Rigaku. They contain rotating tungsten anodes with three beam capability for wide selection of elements. One of the beams (WM) is used for monitoring of low Z elements such as Na, Mg and Al. The standard output is 9 kW with 300 mA at 30 kV. The tool runs 24 hours a day, 7 days a week, except for maintenance and breakdowns. We have been using TXRF for in-fab monitoring of various tools and processes for trace contamination and some quantification of materials. This in-fab operation is important because it gives real time monitoring without the necessity of bringing the wafers out of the fab. Secondly, being in ultra clean fab environment, the risk of background contamination is minimized. Since TXRF measurement is fast and does not need any sample preparation, this works very well as production support tool. Several wafer fab technicians have been trained to use the tool for round the clock operation. We have successfully monitored tools and processes in our fab. One example is the monitoring of numerous sinks used in the cleaning of production wafers after various processes. Monitor wafers are run after sink cleaning and solvent changes and they are then analyzed for any contamination. Another example is the monitoring of tools that use Ferrofluidic seals so as to prevent any contamination from Fe and Cr. Other tools using TXRF include diffusion furnaces, etchers and plasma cleaning tools. We have also been monitoring processes such as ion implantation, metal deposition and rapid thermal annealing. In this presentation, we will

  2. Improvisation during Process-Technology Adoption

    DEFF Research Database (Denmark)

    Tjørnehøj, Gitte; Mathiassen, Lars

    2010-01-01

    SPI technology adoption and events that causes the process to drift in unpredictable directions. To further understand how management's attempt to control the process is complemented by drifting, this article investigates the role of improvisation in adoption of SPI technology in a Danish software......Most software firms struggle to take advantage of the potential benefits of software process improvement (SPI) as they adopt this technology into the complex and dynamic realities of their day-to-day operation. Such efforts are therefore typically fluctuating between management's attempt to control...... firm, SmallSoft, over a 10-year period (1996–2005). We found that micro-level and macro-level improvisations interacted, often in uncoordinated ways, to shape SPI technology adoption at SmallSoft. The improvisations enhanced employee creativity, motivation and empowerment, created momentum...

  3. From Coherently Excited Highly Correlated States to Incoherent Relaxation Processes in Semiconductors

    International Nuclear Information System (INIS)

    Scha''fer, W.; Lo''venich, R.; Fromer, N. A.; Chemla, D. S.

    2001-01-01

    Recent theories of highly excited semiconductors are based on two formalisms, referring to complementary experimental conditions, the real-time nonequilibrium Green's function techniques and the coherently controlled truncation of the many-particle problem. We present a novel many-particle theory containing both of these methods as limiting cases. As a first example of its application, we investigate four-particle correlations in a strong magnetic field including dephasing resulting from the growth of incoherent one-particle distribution functions. Our results are the first rigorous solution concerning formation and decay of four-particle correlations in semiconductors. They are in excellent agreement with experimental data

  4. Non-markovian effects in semiconductor cavity QED: Role of phonon-mediated processes

    DEFF Research Database (Denmark)

    Nielsen, Per Kær; Nielsen, Torben Roland; Lodahl, Peter

    We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from the pola......We show theoretically that the non-Markovian nature of the carrier-phonon interaction influences the dynamical properties of a semiconductor cavity QED system considerably, leading to asymmetries with respect to detuning in carrier lifetimes. This pronounced phonon effect originates from...... the polaritonic quasi-particle nature of the carrier-photon system interacting with the phonon reservoir....

  5. Microwave photonics processing controlling the speed of light in semiconductor waveguides

    DEFF Research Database (Denmark)

    Xue, Weiqi; Chen, Yaohui; Sales, Salvador

    2009-01-01

    We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like optoelect......We review the theory of slow and fast light effect in semiconductor waveguides and potential applications of these effects in microwave photonic systems as RF phase shifters. Recent applications as microwave photonic filters is presented. Also, in the presentation more applications like...

  6. Application of various technological processes in red clover seed processing

    OpenAIRE

    Đokić, Dragoslav; Stanisavljević, Rade; Terzić, Dragan; Marković, Jordan; Radivojević, Gordana; Anđelković, Bojan; Barać, Saša

    2012-01-01

    This paper presents the results of the processing of natural red clover seed on the processing equipment using different technological methods. Red clover seed, for the establishment and crop utilization, must be of high purity, germination, and high genetic values. These requirements are achieved by processing, or removing impurities and poor quality seeds. Red clover seed processing involves a number of operations, of which the most important are: cleaning, packaging, labeling and storage. ...

  7. Application of statistical methods (SPC) for an optimized control of the irradiation process of high-power semiconductors

    International Nuclear Information System (INIS)

    Mittendorfer, J.; Zwanziger, P.

    2000-01-01

    High-power bipolar semiconductor devices (thyristors and diodes) in a disc-type shape are key components (semiconductor switches) for high-power electronic systems. These systems are important for the economic design of energy transmission systems, i.e. high-power drive systems, static compensation and high-voltage DC transmission lines. In their factory located in Pretzfeld, Germany, the company, eupec GmbH+Co.KG (eupec), is producing disc-type devices with ceramic encapsulation in the high-end range for the world market. These elements have to fulfill special customer requirements and therefore deliver tailor-made trade-offs between their on-state voltage and dynamic switching behaviour. This task can be achieved by applying a dedicated electron irradiation on the semiconductor pellets, which tunes this trade-off. In this paper, the requirements to the irradiation company Mediscan GmbH, from the point of view of the semiconductor manufacturer, are described. The actual strategy for controlling the irradiation results to fulfill these requirements are presented, together with the choice of relevant parameters from the viewpoint of the irradiation company. The set of process parameters monitored, using statistical process control (SPC) techniques, includes beam current and energy, conveyor speed and irradiation geometry. The results are highlighted and show the successful co-operation in this business. Watching this process vice versa, an idea is presented and discussed to develop the possibilities of a highly sensitive dose detection device by using modified diodes, which could function as accurate yet cheap and easy-to-use detectors as routine dosimeters for irradiation institutes. (author)

  8. Organic Process Technology Valuation: Cyclohexanone Oxime Syntheses

    Science.gov (United States)

    Cannon, Kevin C.; Breen, Maureen P.

    2010-01-01

    Three contemporary processes for cyclohexanone oxime synthesis are evaluated in a case study. The case study introduces organic chemistry students to basic cost accounting to determine the most economical technology. Technical and financial aspects of these processes are evaluated with problem-based exercises that may be completed by students…

  9. TEXACO GASIFICATION PROCESS - INNOVATIVE TECHNOLOGY EVALUATION REPORT

    Science.gov (United States)

    This report summarizes the evaluation of the Texaco Gasification Process (TGP) conducted under the U.S. Environmental Protection Agency (EPA) Superfund Innovative Technology Evaluation (SITE) Program. The Texaco Gasification Process was developed by Texaco Inc. The TGP is a comm...

  10. Technologies for Collaborative Business Process Management

    NARCIS (Netherlands)

    Sadiq, Shazia; Reichert, M.U.; Schulz, Karsten

    Business process management (BPM) has become an extensive area of research with several specialized aspects. BPM is viewed from highly diverse angles ranging from a management strategy to a software system. It is widely acknowledged that process enforcement technologies hold the potential to provide

  11. Information technology, knowledge processes, and innovation success

    NARCIS (Netherlands)

    Song, X.M.; Zang, F.; Bij, van der J.D.; Weggeman, M.C.D.P.

    2001-01-01

    Despite the obvious linkage between information technologies (IT) and knowledge processes and the apparent strategic importance of both, little research has done to explicitly examine how, if at all, IT and knowledge processes affect firm outcomes. The purpose of this study is to bridge this

  12. Laser Processing Technology using Metal Powders

    Energy Technology Data Exchange (ETDEWEB)

    Jang, Jeong-Hwan; Moon, Young-Hoon [Pusan National University, Busan (Korea, Republic of)

    2012-03-15

    The purpose of this paper is to review the state of laser processing technology using metal powders. In recent years, a series of research and development efforts have been undertaken worldwide to develop laser processing technologies to fabricate metal-based parts. Layered manufacturing by the laser melting process is gaining ground for use in manufacturing rapid prototypes (RP), tools (RT) and functional end products. Selective laser sintering / melting (SLS/SLM) is one of the most rapidly growing rapid prototyping techniques. This is mainly due to the processes's suitability for almost any materials, including polymers, metals, ceramics and many types of composites. The interaction between the laser beam and the powder material used in the laser melting process is one of the dominant phenomena defining feasibility and quality. In the case of SLS, the powder is not fully melted during laser scanning, therefore the SLS-processed parts are not fully dense and have relatively low strength. To overcome this disadvantage, SLM and laser cladding (LC) processes have been used to enable full melting of the powder. Further studies on the laser processing technology will be continued due to the many potential applications that the technology offers.

  13. Optimization of processing technology of Rhizoma Pinelliae ...

    African Journals Online (AJOL)

    Methods: Orthogonal design method was applied to analyze the effects of factors such as licorice concentration volume, soaking time and processing temperature on processing technology of Rhizoma Pinelliae Praeparatum; MTT assay and flow cytometry were used to determine the inhibitory effect of Rhizoma Pinelliae ...

  14. Feature scale modeling for etching and deposition processes in semiconductor manufacturing

    International Nuclear Information System (INIS)

    Pyka, W.

    2000-04-01

    Simulation of etching and deposition processes as well as three-dimensional geometry generation are important issues in state of the art TCAD applications. Three-dimensional effects are gaining importance for semiconductor devices and for their interconnects. Therefore a strictly physically based simulation of their topography is required. Accurate investigation of single etching and deposition processes has become equally important as process integration. Within this context several aspects of three-dimensional topography simulation have been covered by this thesis and new and interesting results have been achieved in various areas. The algorithmic core of the cell-based structuring element surface propagation method has been optimized and has been eliminated from its position as factor which predominantly determines the required CPU time. In parallel with investigated optimization techniques and required by various process models, the implementation of the surface normal calculation and the special handling of voids and unconnected parts of the geometry has been completed in three dimensions. A process-step-based solid modeling tool which incorporates layout data as well as aerial image simulation has been supplied. It can be coupled with the topography simulation and includes simple geometrically based models for CMP and oxidation. In the presented combination, the tool makes use of the design information stored in the layout file, combines it with the manufacturing recipe, and hence is extremely helpful for the automatic generation of three-dimensional structures. Its usefulness has been proven with several interconnect examples. Regarding topography models, resist development not only turned out to be very helpful for predicting exposed and etched resist profiles within a rigorous lithography simulation, but, by means of benchmark examples, also demonstrated the extraordinary stability of the proposed cellular surface movement algorithm. With respect to

  15. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Science.gov (United States)

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  16. Quantifying resistances across nanoscale low- and high-angle interspherulite boundaries in solution-processed organic semiconductor thin films.

    Science.gov (United States)

    Lee, Stephanie S; Mativetsky, Jeffrey M; Loth, Marsha A; Anthony, John E; Loo, Yueh-Lin

    2012-11-27

    The nanoscale boundaries formed when neighboring spherulites impinge in polycrystalline, solution-processed organic semiconductor thin films act as bottlenecks to charge transport, significantly reducing organic thin-film transistor mobility in devices comprising spherulitic thin films as the active layers. These interspherulite boundaries (ISBs) are structurally complex, with varying angles of molecular orientation mismatch along their lengths. We have successfully engineered exclusively low- and exclusively high-angle ISBs to elucidate how the angle of molecular orientation mismatch at ISBs affects their resistivities in triethylsilylethynyl anthradithiophene thin films. Conductive AFM and four-probe measurements reveal that current flow is unaffected by the presence of low-angle ISBs, whereas current flow is significantly disrupted across high-angle ISBs. In the latter case, we estimate the resistivity to be 22 MΩμm(2)/width of the ISB, only less than a quarter of the resistivity measured across low-angle grain boundaries in thermally evaporated sexithiophene thin films. This discrepancy in resistivities across ISBs in solution-processed organic semiconductor thin films and grain boundaries in thermally evaporated organic semiconductor thin films likely arises from inherent differences in the nature of film formation in the respective systems.

  17. Semiconductor Optics

    CERN Document Server

    Klingshirn, Claus F

    2012-01-01

    This updated and enlarged new edition of Semiconductor Optics provides an introduction to and an overview of semiconductor optics from the IR through the visible to the UV, including linear and nonlinear optical properties, dynamics, magneto and electrooptics, high-excitation effects and laser processes, some applications, experimental techniques and group theory. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered extend from physics to materials science and optoelectronics. Significantly updated chapters add coverage of current topics such as electron hole plasma, Bose condensation of excitons and meta materials. Over 120 problems, chapter introductions and a detailed index make it the key textbook for graduate students in physics. The mathematics is kept as elementary as possible, sufficient for an intuitive understanding of the experimental results and techniques treated. The subjects covered ...

  18. Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

    Energy Technology Data Exchange (ETDEWEB)

    Paiella, Roberto [Boston Univ., MA (United States); Moustakas, Theodore D. [Boston Univ., MA (United States)

    2017-07-31

    This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical

  19. Business process modeling for processing classified documents using RFID technology

    Directory of Open Access Journals (Sweden)

    Koszela Jarosław

    2016-01-01

    Full Text Available The article outlines the application of the processing approach to the functional description of the designed IT system supporting the operations of the secret office, which processes classified documents. The article describes the application of the method of incremental modeling of business processes according to the BPMN model to the description of the processes currently implemented (“as is” in a manual manner and target processes (“to be”, using the RFID technology for the purpose of their automation. Additionally, the examples of applying the method of structural and dynamic analysis of the processes (process simulation to verify their correctness and efficiency were presented. The extension of the process analysis method is a possibility of applying the warehouse of processes and process mining methods.

  20. Transition strategies for managing technological discontinuities: lessons from the history of the semiconductor industry

    NARCIS (Netherlands)

    Stoelhorst, J.W.

    2002-01-01

    This paper explores the nature of competition under conditions of technological change and asks how firms can manage technological discontinuities. By drawing on the literatures on strategic management and technology dynamics, it is proposed that firms should change the nature of their strategy as a

  1. Assessment of Anisotropic Semiconductor Nanorod and Nanoplatelet Heterostructures with Polarized Emission for Liquid Crystal Display Technology.

    Science.gov (United States)

    Cunningham, Patrick D; Souza, João B; Fedin, Igor; She, Chunxing; Lee, Byeongdu; Talapin, Dmitri V

    2016-06-28

    Semiconductor nanorods can emit linear-polarized light at efficiencies over 80%. Polarization of light in these systems, confirmed through single-rod spectroscopy, can be explained on the basis of the anisotropy of the transition dipole moment and dielectric confinement effects. Here we report emission polarization in macroscopic semiconductor-polymer composite films containing CdSe/CdS nanorods and colloidal CdSe nanoplatelets. Anisotropic nanocrystals dispersed in polymer films of poly butyl-co-isobutyl methacrylate (PBiBMA) can be stretched mechanically in order to obtain unidirectionally aligned arrays. A high degree of alignment, corresponding to an orientation factor of 0.87, was achieved and large areas demonstrated polarized emission, with the contrast ratio I∥/I⊥ = 5.6, making these films viable candidates for use in liquid crystal display (LCD) devices. To some surprise, we observed significant optical anisotropy and emission polarization for 2D CdSe nanoplatelets with the electronic structure of quantum wells. The aligned nanorod arrays serve as optical funnels, absorbing unpolarized light and re-emitting light from deep-green to red with quantum efficiencies over 90% and high degree of linear polarization. Our results conclusively demonstrate the benefits of anisotropic nanostructures for LCD backlighting. The polymer films with aligned CdSe/CdS dot-in-rod and rod-in-rod nanostructures show more than 2-fold enhancement of brightness compared to the emitter layers with randomly oriented nanostructures. This effect can be explained as the combination of linearly polarized luminescence and directional emission from individual nanostructures.

  2. Manufacturing technology and process for BWR fuel

    International Nuclear Information System (INIS)

    Kato, Shigeru

    1996-01-01

    Following recent advanced technologies, processes and requests of the design changes of BWR fuel, Nuclear Fuel Industries, Ltd. (NFI) has upgraded the manufacturing technology and honed its own skills to complete its brand-new automated facility in Tokai in the latter half of 1980's. The plant uses various forms of automation throughout the manufacturing process: the acceptance of uranium dioxide powder, pelletizing, fuel rod assembling, fuel bundle assembling and shipment. All processes are well computerized and linked together to establish the integrated control system with three levels of Production and Quality Control, Process Control and Process Automation. This multi-level system plays an important role in the quality assurance system which generates the highest quality of fuels and other benefits. (author)

  3. Compound Semiconductor Radiation Detector

    International Nuclear Information System (INIS)

    Kim, Y. K.; Park, S. H.; Lee, W. G.; Ha, J. H.

    2005-01-01

    In 1945, Van Heerden measured α, β and γ radiations with the cooled AgCl crystal. It was the first radiation measurement using the compound semiconductor detector. Since then the compound semiconductor has been extensively studied as radiation detector. Generally the radiation detector can be divided into the gas detector, the scintillator and the semiconductor detector. The semiconductor detector has good points comparing to other radiation detectors. Since the density of the semiconductor detector is higher than that of the gas detector, the semiconductor detector can be made with the compact size to measure the high energy radiation. In the scintillator, the radiation is measured with the two-step process. That is, the radiation is converted into the photons, which are changed into electrons by a photo-detector, inside the scintillator. However in the semiconductor radiation detector, the radiation is measured only with the one-step process. The electron-hole pairs are generated from the radiation interaction inside the semiconductor detector, and these electrons and charged ions are directly collected to get the signal. The energy resolution of the semiconductor detector is generally better than that of the scintillator. At present, the commonly used semiconductors as the radiation detector are Si and Ge. However, these semiconductor detectors have weak points. That is, one needs thick material to measure the high energy radiation because of the relatively low atomic number of the composite material. In Ge case, the dark current of the detector is large at room temperature because of the small band-gap energy. Recently the compound semiconductor detectors have been extensively studied to overcome these problems. In this paper, we will briefly summarize the recent research topics about the compound semiconductor detector. We will introduce the research activities of our group, too

  4. Low Cost Solar Array Project. Feasibility of the silane process for producing semiconductor-grade silicon. Final report, October 1975-March 1979

    Energy Technology Data Exchange (ETDEWEB)

    1979-06-01

    The commercial production of low-cost semiconductor-grade silicon is an essential requirement of the JPL/DOE (Department of Energy) Low-Cost Solar Array (LSA) Project. A 1000-metric-ton-per-year commercial facility using the Union Carbide Silane Process will produce molten silicon for an estimated price of $7.56/kg (1975 dollars, private financing), meeting the DOE goal of less than $10/kg. Conclusions and technology status are reported for both contract phases, which had the following objectives: (1) establish the feasibility of Union Carbide's Silane Process for commercial application, and (2) develop an integrated process design for an Experimental Process System Development Unit (EPSDU) and a commercial facility, and estimate the corresponding commercial plant economic performance. To assemble the facility design, the following work was performed: (a) collection of Union Carbide's applicable background technology; (b) design, assembly, and operation of a small integrated silane-producing Process Development Unit (PDU); (c) analysis, testing, and comparison of two high-temperature methods for converting pure silane to silicon metal; and (d) determination of chemical reaction equilibria and kinetics, and vapor-liquid equilibria for chlorosilanes.

  5. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.

    2015-02-13

    Physical phenomena such as energy quantization have to-date been overlooked in solution-processed inorganic semiconducting layers, owing to heterogeneity in layer thickness uniformity unlike some of their vacuum-deposited counterparts. Recent reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization in inorganic semiconductor layers with appreciable surface roughness, as compared to the mean layer thickness, and present experimental evidence of the existence of quantized energy states in spin-cast layers of zinc oxide (ZnO). As-grown ZnO layers are found to be remarkably continuous and uniform with controllable thicknesses in the range 2-24 nm and exhibit a characteristic widening of the energy bandgap with reducing thickness in agreement with theoretical predictions. Using sequentially spin-cast layers of ZnO as the bulk semiconductor and quantum well materials, and gallium oxide or organic self-assembled monolayers as the barrier materials, two terminal electronic devices are demonstrated, the current-voltage characteristics of which resemble closely those of double-barrier resonant-tunneling diodes. As-fabricated all-oxide/hybrid devices exhibit a characteristic negative-differential conductance region with peak-to-valley ratios in the range 2-7.

  6. Semiconductor annealing

    International Nuclear Information System (INIS)

    Young, J.M.; Scovell, P.D.

    1981-01-01

    A process for annealing crystal damage in ion implanted semiconductor devices is described in which the device is rapidly heated to a temperature between 450 and 600 0 C and allowed to cool. It has been found that such heating of the device to these relatively low temperatures results in rapid annealing. In one application the device may be heated on a graphite element mounted between electrodes in an inert atmosphere in a chamber. The process may be enhanced by the application of optical radiation from a Xenon lamp. (author)

  7. Surface Passivation for 3-5 Semiconductor Processing: Stable Gallium Sulphide Films by MOCVD

    Science.gov (United States)

    Macinnes, Andrew N.; Jenkins, Phillip P.; Power, Michael B.; Kang, Soon; Barron, Andrew R.; Hepp, Aloysius F.; Tabib-Azar, Massood

    1994-01-01

    Gallium sulphide (GaS) has been deposited on GaAs to form stable, insulating, passivating layers. Spectrally resolved photoluminescence and surface recombination velocity measurements indicate that the GaS itself can contribute a significant fraction of the photoluminescence in GaS/GaAs structures. Determination of surface recombination velocity by photoluminescence is therefore difficult. By using C-V analysis of metal-insulator-semiconductor structures, passivation of the GaAs with GaS films is quantified.

  8. Some aspects of ion implantation in semiconductors

    International Nuclear Information System (INIS)

    Klose, H.

    1982-01-01

    The advantages and disadvantages of ion implantation in the application of semiconductor technology are reviewed in short. This article describes some aspects of the state of the art and current developments of nonconventional annealing procedures, ion beam gettering of deep impurities, special applications of ion implantation using low or high energy ions and GaAs-electronics, respectively. Radiation defects in Si and the nonexponential emission and capture processes in GaAsP are discussed. Final future trends of ion beam methods in semiconductor production technology are summarized. (author)

  9. Radiation effects in semiconductors

    CERN Document Server

    2011-01-01

    There is a need to understand and combat potential radiation damage problems in semiconductor devices and circuits. Written by international experts, this book explains the effects of radiation on semiconductor devices, radiation detectors, and electronic devices and components. These contributors explore emerging applications, detector technologies, circuit design techniques, new materials, and innovative system approaches. The text focuses on how the technology is being used rather than the mathematical foundations behind it. It covers CMOS radiation-tolerant circuit implementations, CMOS pr

  10. BUSINESS PROCESS MANAGEMENT SYSTEMS TECHNOLOGY COMPONENTS ANALYSIS

    Directory of Open Access Journals (Sweden)

    Andrea Giovanni Spelta

    2007-05-01

    Full Text Available The information technology that supports the implementation of the business process management appproach is called Business Process Management System (BPMS. The main components of the BPMS solution framework are process definition repository, process instances repository, transaction manager, conectors framework, process engine and middleware. In this paper we define and characterize the role and importance of the components of BPMS's framework. The research method adopted was the case study, through the analysis of the implementation of the BPMS solution in an insurance company called Chubb do Brasil. In the case study, the process "Manage Coinsured Events"" is described and characterized, as well as the components of the BPMS solution adopted and implemented by Chubb do Brasil for managing this process.

  11. Organizational Development: Values, Process, and Technology.

    Science.gov (United States)

    Margulies, Newton; Raia, Anthony P.

    The current state-of-the-art of organizational development is the focus of this book. The five parts into which the book is divided are as follows: Part One--Introduction (Organizational Development in Perspective--the nature, values, process, and technology of organizational development); Part Two--The Components of Organizational Developments…

  12. Exploring novel food proteins and processing technologies

    NARCIS (Netherlands)

    Avila Ruiz, Geraldine

    2016-01-01

    Foods rich in protein are nowadays high in demand worldwide. To ensure a sustainable supply and a high quality of protein foods, novel food proteins and processing technologies need to be explored to understand whether they can be used for the development of high-quality protein foods. Therefore,

  13. Improvisation during Process-Technology Adoption

    DEFF Research Database (Denmark)

    Tjørnehøj, Gitte; Mathiassen, Lars

    2010-01-01

    Most software firms struggle to take advantage of the potential benefits of software process improvement (SPI) as they adopt this technology into the complex and dynamic realities of their day-to-day operation. Such efforts are therefore typically fluctuating between management's attempt to contr...

  14. Microplasma fabrication: from semiconductor technology for 2D-chips and microfluidic channels to rapid prototyping and 3D-printing of microplasma devices

    Science.gov (United States)

    Shatford, R.; Karanassios, Vassili

    2014-05-01

    Microplasmas are receiving attention in recent conferences and current scientific literature. In our laboratory, microplasmas-on-chips proved to be particularly attractive. The 2D- and 3D-chips we developed became hybrid because they were fitted with a quartz plate (quartz was used due to its transparency to UV). Fabrication of 2D- and 3D-chips for microplasma research is described. The fabrication methods described ranged from semiconductor fabrication technology, to Computer Numerical Control (CNC) machining, to 3D-printing. These methods may prove to be useful for those contemplating in entering microplasma research but have no access to expensive semiconductor fabrication equipment.

  15. Development of Food Preservation and Processing Technologies by Radiation Technology

    International Nuclear Information System (INIS)

    Byun, Myung Woo; Lee, Ju Won; Kim, Jae Hun

    2007-07-01

    To secure national food resources, development of energy-saving food processing and preservation technologies, establishment of method on improvement of national health and safety by development of alternative techniques of chemicals and foundation of the production of hygienic food and public health related products by irradiation technology were studied. Results at current stage are following: As the first cooperative venture business technically invested by National Atomic Research Development Project, institute/company's [technology-invested technology foundation No. 1] cooperative venture, Sun-BioTech Ltd., was founded and stated its business. This suggested new model for commercialization and industrialization of the research product by nation-found institute. From the notice of newly approved product list about irradiated food, radiation health related legal approval on 7 food items was achieved from the Ministry of health and wellfare, the Korea Food and Drug Administration, and this contributed the foundation of enlargement of practical use of irradiated food. As one of the foundation project for activation of radiation application technology for the sanitation and secure preservation of special food, such as military meal service, food service for patient, and food for sports, and instant food, such as ready-to-eat/ready-to-cook food, the proposal for radiation application to the major military commander at the Ministry of National Defence and the Joint Chiefs of Staff was accepted for the direction of military supply development in mid-termed plan for the development of war supply. Especially, through the preliminary research and the development of foundation technology for the development of the Korean style space food and functional space food, space Kimch with very long shelf life was finally developed. The development of new item/products for food and life science by combining RT/BT, the development of technology for the elimination/reduction of

  16. Development of Food Preservation and Processing Technologies by Radiation Technology

    Energy Technology Data Exchange (ETDEWEB)

    Byun, Myung Woo; Lee, Ju Won; Kim, Jae Hun [and others

    2007-07-15

    To secure national food resources, development of energy-saving food processing and preservation technologies, establishment of method on improvement of national health and safety by development of alternative techniques of chemicals and foundation of the production of hygienic food and public health related products by irradiation technology were studied. Results at current stage are following: As the first cooperative venture business technically invested by National Atomic Research Development Project, institute/company's [technology-invested technology foundation No. 1] cooperative venture, Sun-BioTech Ltd., was founded and stated its business. This suggested new model for commercialization and industrialization of the research product by nation-found institute. From the notice of newly approved product list about irradiated food, radiation health related legal approval on 7 food items was achieved from the Ministry of health and wellfare, the Korea Food and Drug Administration, and this contributed the foundation of enlargement of practical use of irradiated food. As one of the foundation project for activation of radiation application technology for the sanitation and secure preservation of special food, such as military meal service, food service for patient, and food for sports, and instant food, such as ready-to-eat/ready-to-cook food, the proposal for radiation application to the major military commander at the Ministry of National Defence and the Joint Chiefs of Staff was accepted for the direction of military supply development in mid-termed plan for the development of war supply. Especially, through the preliminary research and the development of foundation technology for the development of the Korean style space food and functional space food, space Kimch with very long shelf life was finally developed. The development of new item/products for food and life science by combining RT/BT, the development of technology for the elimination/reduction of

  17. Development of Food Preservation and Processing Technologies by Radiation Technology

    Energy Technology Data Exchange (ETDEWEB)

    Byun, Myung Woo; Lee, Ju Won; Kim, Jae Hun (and others)

    2007-07-15

    To secure national food resources, development of energy-saving food processing and preservation technologies, establishment of method on improvement of national health and safety by development of alternative techniques of chemicals and foundation of the production of hygienic food and public health related products by irradiation technology were studied. Results at current stage are following: As the first cooperative venture business technically invested by National Atomic Research Development Project, institute/company's [technology-invested technology foundation No. 1] cooperative venture, Sun-BioTech Ltd., was founded and stated its business. This suggested new model for commercialization and industrialization of the research product by nation-found institute. From the notice of newly approved product list about irradiated food, radiation health related legal approval on 7 food items was achieved from the Ministry of health and wellfare, the Korea Food and Drug Administration, and this contributed the foundation of enlargement of practical use of irradiated food. As one of the foundation project for activation of radiation application technology for the sanitation and secure preservation of special food, such as military meal service, food service for patient, and food for sports, and instant food, such as ready-to-eat/ready-to-cook food, the proposal for radiation application to the major military commander at the Ministry of National Defence and the Joint Chiefs of Staff was accepted for the direction of military supply development in mid-termed plan for the development of war supply. Especially, through the preliminary research and the development of foundation technology for the development of the Korean style space food and functional space food, space Kimch with very long shelf life was finally developed. The development of new item/products for food and life science by combining RT/BT, the development of technology for the elimination/reduction of

  18. Solution processable semiconductor thin films: Correlation between morphological, structural, optical and charge transport properties

    Science.gov (United States)

    Isik, Dilek

    This Ph.D. thesis is a result of multidisciplinary research bringing together fundamental concepts in thin film engineering, materials science, materials processing and characterization, electrochemistry, microfabrication, and device physics. Experiments were conducted by tackling scientific problems in the field of thin films and interfaces, with the aim to correlate the morphology, crystalline structure, electronic structure of thin films with the functional properties of the films and the performances of electronic devices based thereon. Furthermore, novel strategies based on interfacial phenomena at electrolyte/thin film interfaces were explored and exploited to control the electrical conductivity of the thin films. Three main chemical systems were the object of the studies performed during this Ph.D., two types of organic semiconductors (azomethine-based oligomers and polymers and soluble pentacene derivatives) and one metal oxide semiconductor (tungsten trioxide, WO3). To explore the morphological properties of the thin films, atomic force microscopy was employed. The morphological properties were further investigated by hyperspectral fluorescence microscopy and tentatively correlated to the charge transport properties of the films. X-ray diffraction (Grazing incidence XRD, GIXRD) was used to investigate the crystallinity of the film and the effect of the heat treatment on such crystallinity, as well as to understand the molecular arrangement of the organic molecules in the thin film. The charge transport properties of the films were evaluated in thin film transistor configuration. For electrolyte gated thin film transistors, time dependent transient measurements were conducted, in parallel to more conventional transistor characterizations, to explore the specific effects played on the gating by the anion and cation constituting the electrolyte. The capacitances of the electrical double layers at the electrolyte/WO3 interface were obtained from

  19. Improving drug manufacturing with process analytical technology.

    Science.gov (United States)

    Rodrigues, Licinia O; Alves, Teresa P; Cardoso, Joaquim P; Menezes, José C

    2006-01-01

    Within the process analytical technology (PAT) framework, as presented in the US Food and Drug Administration guidelines, the aim is to design, develop and operate processes consistently to ensure a pre-defined level of quality at the end of the manufacturing process. Three PAT implementation scenarios can be envisaged. Firstly, PAT could be used in its most modest version (in an almost non-PAT manner) to simply replace an existing quality control protocol (eg, using near-infrared spectroscopy for an in-process quality control, such as moisture content). Secondly, the use of in-process monitoring and process analysis could be integrated to enhance process understanding and operation for an existing industrial process. Thirdly, PAT could be used extensively and exclusively throughout development, scale-up and full-scale production of a new product and process. Although the first type of implementations are well known, reports of the second and third types remain scarce. Herein, results obtained from PAT implementations of the second and third types are described for two industrial processes for preparing bulk active pharmaceutical ingredients, demonstrating the benefits in terms of increased process understanding and process control.

  20. Integration thermal processes through Pinch technology

    International Nuclear Information System (INIS)

    Rios H, Carlos Mario; Grisales Rincon, Rogelio; Cardona, Carlos Ariel

    2004-01-01

    This paper presents the techniques of heat integration used for process optimization, their fortresses and weaknesses during the implementation in several specific process are also discussed. It is focused to the pinch technology, explaining algorithms for method applications in the industry. The paper provides the concepts and models involved in different types of commercial software applying this method for energy cost reduction, both in design of new plants and improve of old ones. As complement to benefits of the energy cost reduction it is analysed other favorable aspects of process integration, as the emissions waste reduction and the combined heat end power systems

  1. Energy conversion technology by chemical processes

    Energy Technology Data Exchange (ETDEWEB)

    Oh, I W; Yoon, K S; Cho, B W [Korea Inst. of Science and Technology, Seoul (Korea, Republic of); and others

    1996-12-01

    The sharp increase in energy usage according to the industry development has resulted in deficiency of energy resources and severe pollution problems. Therefore, development of the effective way of energy usage and energy resources of low pollution is needed. Development of the energy conversion technology by chemical processes is also indispensable, which will replace the pollutant-producing and inefficient mechanical energy conversion technologies. Energy conversion technology by chemical processes directly converts chemical energy to electrical one, or converts heat energy to chemical one followed by heat storage. The technology includes batteries, fuel cells, and energy storage system. The are still many problems on performance, safety, and manufacturing of the secondary battery which is highly demanded in electronics, communication, and computer industries. To overcome these problems, key components such as carbon electrode, metal oxide electrode, and solid polymer electrolyte are developed in this study, followed by the fabrication of the lithium secondary battery. Polymer electrolyte fuel cell, as an advanced power generating apparatus with high efficiency, no pollution, and no noise, has many applications such as zero-emission vehicles, on-site power plants, and military purposes. After fabricating the cell components and operating the single cells, the fundamental technologies in polymer electrolyte fuel cell are established in this study. Energy storage technology provides the safe and regular heat energy, irrespective of the change of the heat energy sources, adjusts time gap between consumption and supply, and upgrades and concentrates low grade heat energy. In this study, useful chemical reactions for efficient storage and transport are investigated and the chemical heat storage technology are developed. (author) 41 refs., 90 figs., 20 tabs.

  2. Design and optimization of sustainable process technologies

    DEFF Research Database (Denmark)

    Mussatto, Solange I.; Qin, Fen; Yamakawa, Celina Kiyomi

    has been then considered a keypoint to achieve such purposes, being also able to result in potential environmental, economic, and social benefits. In this sense, the Biomass Conversion and Bioprocess TechnologyGroup (BCBT) has been working on the development of newstrategies for the use of biomass......, minimizing the costs and maximizing the efficiencyand productivity.Once the optimal conditions are identified, the process scale-up can be then evaluated. This could be translated in a faster time to market for newprocess technologies....

  3. Photonic processing and realization of an all-optical digital comparator based on semiconductor optical amplifiers

    Science.gov (United States)

    Singh, Simranjit; Kaur, Ramandeep; Kaler, Rajinder Singh

    2015-01-01

    A module of an all-optical 2-bit comparator is analyzed and implemented using semiconductor optical amplifiers (SOAs). By employing SOA-based cross phase modulation, the optical XNOR logic is used to get an A=B output signal, where as AB¯ and A¯B> logics operations are used to realize A>B and Aoperations results along with the wide open eye diagrams are obtained. It is suggested that the proposed system would be promising in all-optical high speed networks and computing systems.

  4. Control of processes using isotopic diagnostic's technologies

    International Nuclear Information System (INIS)

    Vargas, Celso; Chaverri, Oscar; Chine, Bruno; Conejo, Mario

    2005-01-01

    The Escuela de Ciencias e Ingenieria de los Materiales of the Instituto Tecnologico de Costa Rica, in cooperation with OIEA, develops a project of dowry of capacity oriented to the formation of professionals and equipment for the use of two important technologies of isotopic diagnostic. The first of them is the technology of tracers that operates the unique properties that present different radioactive isotopics like open sources. The second one well known as scanning or profile gamma, uses sealed source, of the some nature that the previous ones, to obtain profiles in different processes and thus to determine its internal condition and operation. The objective of this article is to present both technologies, its benefits and to promote the use in the country [es

  5. Waste processing building with incineration technology

    Science.gov (United States)

    Wasilah, Wasilah; Zaldi Suradin, Muh.

    2017-12-01

    In Indonesia, waste problem is one of major problem of the society in the city as part of their life dynamics. Based on Regional Medium Term Development Plan of South Sulawesi Province in 2013-2018, total volume and waste production from Makassar City, Maros, Gowa, and Takalar Regency estimates the garbage dump level 9,076.949 m3/person/day. Additionally, aim of this design is to present a recommendation on waste processing facility design that would accommodate waste processing process activity by incineration technology and supported by supporting activity such as place of education and research on waste, and the administration activity on waste processing facility. Implementation of incineration technology would reduce waste volume up to 90% followed by relative negative impact possibility. The result planning is in form of landscape layout that inspired from the observation analysis of satellite image line pattern of planning site and then created as a building site pattern. Consideration of building orientation conducted by wind analysis process and sun path by auto desk project Vasari software. The footprint designed by separate circulation system between waste management facility interest and the social visiting activity in order to minimize the croos and thus bring convenient to the building user. Building mass designed by inseparable connection series system, from the main building that located in the Northward, then connected to a centre visitor area lengthways, and walked to the waste processing area into the residue area in the Southward area.

  6. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1987-01-01

    In-depth exploration of the implications of carrier populations and Fermi energies examines distribution of electrons in energy bands and impurity levels of semiconductors. Also: kinetics of semiconductors containing excess carriers, particularly in terms of trapping, excitation, and recombination.

  7. The Plasma Hearth Process Technology Development Project

    International Nuclear Information System (INIS)

    Geimer, R.; Batdorf, J.; Wolfe, P.

    1993-01-01

    The US DOE Office of Technology Development (OTD) is currently evaluating the Plasma Hearth Process (PHP) for potential treatment of several DOE waste types. The PHP is a high-temperature vitrification process that has potential application for a wide range of mixed waste types in both the low-level and transuranic mixed waste categories. The PHP is being tested under both the OTD Mixed Waste Integrated Program and the Buried Waste Integrated Demonstration. Initial testing has been completed on several different surrogate waste forms that are representative of some of the DOE mixed waste streams. Destruction of organic material exceeds that of conventional incineration technologies. The vitrified residual has leaching characteristics comparable to glass formulations produced in the high-level waste program. The first phase of the PHP demonstration project has been successfully completed, and the project is currently beginning a comprehensive second phase of development and testing

  8. Similarity search processing. Paralelization and indexing technologies.

    Directory of Open Access Journals (Sweden)

    Eder Dos Santos

    2015-08-01

    The next Scientific-Technical Report addresses the similarity search and the implementation of metric structures on parallel environments. It also presents the state of the art related to similarity search on metric structures and parallelism technologies. Comparative analysis are also proposed, seeking to identify the behavior of a set of metric spaces and metric structures over processing platforms multicore-based and GPU-based.

  9. Developing technological process of obtaining giality casts

    Directory of Open Access Journals (Sweden)

    A. Issagulov

    2014-10-01

    Full Text Available The article considers the process of manufacturing castings using sand-resin forms and alloying furnace. Were the optimal technological parameters of manufacturing shell molds for the manufacture of castings of heating equipment. Using the same upon receipt of castings by casting in shell molds furnace alloying and deoxidation of the metal will provide consumers with quality products and have a positive impact on the economy in general engineering.

  10. Boosting the ambipolar performance of solution-processable polymer semiconductors via hybrid side-chain engineering.

    Science.gov (United States)

    Lee, Junghoon; Han, A-Reum; Yu, Hojeong; Shin, Tae Joo; Yang, Changduk; Oh, Joon Hak

    2013-06-26

    Ambipolar polymer semiconductors are highly suited for use in flexible, printable, and large-area electronics as they exhibit both n-type (electron-transporting) and p-type (hole-transporting) operations within a single layer. This allows for cost-effective fabrication of complementary circuits with high noise immunity and operational stability. Currently, the performance of ambipolar polymer semiconductors lags behind that of their unipolar counterparts. Here, we report on the side-chain engineering of conjugated, alternating electron donor-acceptor (D-A) polymers using diketopyrrolopyrrole-selenophene copolymers with hybrid siloxane-solubilizing groups (PTDPPSe-Si) to enhance ambipolar performance. The alkyl spacer length of the hybrid side chains was systematically tuned to boost ambipolar performance. The optimized three-dimensional (3-D) charge transport of PTDPPSe-Si with pentyl spacers yielded unprecedentedly high hole and electron mobilities of 8.84 and 4.34 cm(2) V(-1) s(-1), respectively. These results provide guidelines for the molecular design of semiconducting polymers with hybrid side chains.

  11. Packaged semiconductor laser optical phase locked loop for photonic generation, processing and transmission of microwave signals

    DEFF Research Database (Denmark)

    Langley, L.N.; Elkin, M.D.; Edege, C.

    1999-01-01

    In this paper, we present the first fully packaged semiconductor laser optical phase-locked loop (OPLL) microwave photonic transmitter. The transmitter is based on semiconductor lasers that are directly phase locked without the use of any other phase noise-reduction mechanisms. In this transmitter......, the lasers have a free-running summed linewidth of 6 MHz and the OPLL has a feedback bandwidth of 70 MHz, A state-of-the-art performance is obtained, with a total phase-error variance of 0.05 rad(2) (1-GHz bandwidth) and a carrier phase-error variance of 7x10(-4) rad(2) in a 15-MHz bandwidth. Carriers...... are generated in the range of 7-14 GHz. The OPLL transmitter has been fully packaged for practical use in field trials. This is the first time this type of transmitter has been fabricated in a packaged state which is a significant advance on the route to practical application....

  12. Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor.

    Science.gov (United States)

    Campos, Antonio; Riera-Galindo, Sergi; Puigdollers, Joaquim; Mas-Torrent, Marta

    2018-05-09

    Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

  13. Digital signal processing - growth of a technology

    International Nuclear Information System (INIS)

    Peek, J.B.H.

    1985-01-01

    The rapid development of microelectronics has led to an increasing extent in circuits and systems for digital signal processing. This happened first in professional applications, e.g. geophysics, astronomy and space flight, and now, with the Compact Disc player, these techniques have entered the consumer field. In the near future digital TV applications will undoubtedly follow. This article outlines a number of the developments behind the advancing 'digitization' of modern technology. The article also considers the main advantages and disadvantages of digital signal processing the main modules now used and some common applications. Particular attention is paid to medical applications. (Auth.)

  14. Radiation processing: a versatile technology for industry

    International Nuclear Information System (INIS)

    Cabalfin, E.G.

    1996-01-01

    Soon after the discovery of x-ray in 1895 and radioactivity in 1896, it was recognized that ionizing radiation can modify the chemical, physical and/or biological properties of materials. However, it was only in the late 50's, when large radiation sources become available, has this unique property of radiation found industrial applications in radiation processing. Today, radiation processing has been used by industry in such diverse applications, such as radiation sterilization/decontamination of medical products, pharmaceuticals, cosmetics and their raw materials; radiation cross-linking of wire and cable insulation; production of heat shrinkable materials and polymer foam; and radiation curing of coatings, adhesives and inks on a wide variety of substrates. In addition to being a clean environment-friendly technology, radiation processing can also be used for the conservation of the environment by such processes as radiation treatment of flue gases to remove SO 2 and NO x and disinfection of sewage sludge. Because of the many advantages offered by radiation processing, industry is showing strong interest in the technology as evidenced by the growing number of industrial radiation facilities in many countries. (author)

  15. Plasma Technologies of Solid Fuels Processing

    International Nuclear Information System (INIS)

    Karpenko, E.I.; Messerle, V.E.; Ustimenko, A.

    2003-01-01

    Use of fuel processing plasma technologies improves ecological and economical indexes of low-grade coal utilization at thermal power plants. This paper presents experimental plasma plant 70 k W of power and 11 kg per hour of coal productivity. On the base of material and heat balances integral indexes of the process of plasma gasification of Podmoskovny brown coal 48% of ash content were found. Synthesis gas with concentration 85.2% was got. Hydrogen concentration in the synthesis gas was higher than carbon monoxide one. Ratio H 2 :CO in synthesis gas was 1.4-1.5. It was shown that steam consumption and temperature of the process increase causes H 2 concentration and coal gasification degree increase. Fulfilled experiments and comparison of their result with theoretical investigations allowed creating pilot experimental plant for plasma processing of low-grade coals. The power of the pilot plant is 1000 k W and coal productivity is 300 kg/h. (author)

  16. Influence Processes for Information Technology Acceptance

    DEFF Research Database (Denmark)

    Bhattacherjee, Anol; Sanford, Clive Carlton

    2006-01-01

    This study examines how processes of external influence shape information technology acceptance among potential users, how such influence effects vary across a user population, and whether these effects are persistent over time. Drawing on the elaboration-likelihood model (ELM), we compared two...... alternative influence processes, the central and peripheral routes, in motivating IT acceptance. These processes were respectively operationalized using the argument quality and source credibility constructs, and linked to perceived usefulness and attitude, the core perceptual drivers of IT acceptance. We...... further examined how these influence processes were moderated by users' IT expertise and perceived job relevance and the temporal stability of such influence effects. Nine hypotheses thus developed were empirically validated using a field survey of document management system acceptance at an eastern...

  17. Technology life cycle and specialization patterns of latecomer countries: The case of the semiconductor industry

    NARCIS (Netherlands)

    Triulzi, G.

    2014-01-01

    Catching-up, leapfrogging and falling behind in terms of output and productivity in high-tech industries crucially depends on firms' ability to keep pace with technological change. In fast changing industries today's specialization does not guarantee tomorrow's success as changes in the

  18. Semiconductor physics

    CERN Document Server

    Böer, Karl W

    2018-01-01

    This handbook gives a complete survey of the important topics and results in semiconductor physics. It addresses every fundamental principle and most research topics and areas of application in the field of semiconductor physics. Comprehensive information is provided on crystalline bulk and low-dimensional as well as amporphous semiconductors, including optical, transport, and dynamic properties.

  19. Technological yields of sources for radiation processing

    International Nuclear Information System (INIS)

    Zagorski, Z.P.

    1990-01-01

    The present report is prepared for planners of radiation processing of any material. Sources with cobalt-60 are treated marginally, because most probably, there will be no installation of technically meaningful activity in Poland before the year 2000. Calculations are focused on accelerators of electrons, divided into two groups: versatile linacs of energy up to 13 MeV and accelerators of lower energy, below 2 MeV, of better energetical yield but of limited applications. The calculations are connected with the confrontation of the author's technological expectations during the preparation of the linac project in the late '60s, with the results of twenty years of exploitation of the machine. One has to realize that from the 150 kV input power from the mains, only 5 kV of bent and scanned beam is recovered on the conveyor. That power is only partially used for radiation induced phenomena, sometimes only a few percent, because of the demanded homogeneity of the dose, of the mode of packing of the object and its shape, of losses at the edges of the scanned area and in the spaces between boxes, and of losses during the dead time due to the tuning of the machine and dosimetric operations. The use of lower energy accelerators may be more economical in case of objects of optimum type. At the first stage, that is of the conversion of electrical power into that of the low energy electron beam, the yield is 2-3 times better than in the case of linacs. Attention has been paid to the technological aspects of electron beam conversion into the more penetrating bremsstrahlung similar to gamma radiation. The advantages of these technologies, which make it possible to control the shape of the processed object are stressed. Ten parameters necessary for a proper calculation of technological yields of radiation processing are listed. Additional conditions which must be taken into account in the comparison of the cost of radiation processing with the cost of other technologies are also

  20. Development of semiconductor ΔE-E detector chip using standard bipolar IC technology

    International Nuclear Information System (INIS)

    Mishra, Vijay; Kataria, S.K.

    2005-01-01

    A proposal has been made for developing silicon based AE-E detector chip which can be used as particle identifiers in nuclear physics experiments and also in several applications in nuclear industry scenario. The proposed development work employs standard bipolar IC fabrication technology of Bharat Electronics Ltd. and the deliverable products that emerge out will be very cost effective. The present paper discusses the concept, feasibility studies and systematic plan for fabrication, characterization and packaging of the proposed detectors. (author)

  1. Defects in semiconductors

    International Nuclear Information System (INIS)

    Pimentel, C.A.F.

    1983-01-01

    Some problems openned in the study of defects in semiconductors are presented. In particular, a review is made of the more important problems in Si monocrystals of basic and technological interest: microdefects and the presence of oxigen and carbon. The techniques usually utilized in the semiconductor material characterization are emphatized according its potentialities. Some applications of x-ray techniques in the epitaxial shell characterization in heterostructures, importants in electronic optics, are shown. The increase in the efficiency of these defect analysis methods in semiconductor materials with the use of synchrotron x-ray sources is shown. (L.C.) [pt

  2. Physics of semiconductor lasers

    CERN Document Server

    Mroziewicz, B; Nakwaski, W

    2013-01-01

    Written for readers who have some background in solid state physics but do not necessarily possess any knowledge of semiconductor lasers, this book provides a comprehensive and concise account of fundamental semiconductor laser physics, technology and properties. The principles of operation of these lasers are therefore discussed in detail with the interrelations between their design and optical, electrical and thermal properties. The relative merits of a large number of laser structures and their parameters are described to acquaint the reader with the various aspects of the semiconductor l

  3. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  4. Advanced Technology Composite Fuselage - Materials and Processes

    Science.gov (United States)

    Scholz, D. B.; Dost, E. F.; Flynn, B. W.; Ilcewicz, L. B.; Nelson, K. M.; Sawicki, A. J.; Walker, T. H.; Lakes, R. S.

    1997-01-01

    The goal of Boeing's Advanced Technology Composite Aircraft Structures (ATCAS) program was to develop the technology required for cost and weight efficient use of composite materials in transport fuselage structure. This contractor report describes results of material and process selection, development, and characterization activities. Carbon fiber reinforced epoxy was chosen for fuselage skins and stiffening elements and for passenger and cargo floor structures. The automated fiber placement (AFP) process was selected for fabrication of monolithic and sandwich skin panels. Circumferential frames and window frames were braided and resin transfer molded (RTM'd). Pultrusion was selected for fabrication of floor beams and constant section stiffening elements. Drape forming was chosen for stringers and other stiffening elements. Significant development efforts were expended on the AFP, braiding, and RTM processes. Sandwich core materials and core edge close-out design concepts were evaluated. Autoclave cure processes were developed for stiffened skin and sandwich structures. The stiffness, strength, notch sensitivity, and bearing/bypass properties of fiber-placed skin materials and braided/RTM'd circumferential frame materials were characterized. The strength and durability of cocured and cobonded joints were evaluated. Impact damage resistance of stiffened skin and sandwich structures typical of fuselage panels was investigated. Fluid penetration and migration mechanisms for sandwich panels were studied.

  5. Robotic inspection technology-process an toolbox

    Energy Technology Data Exchange (ETDEWEB)

    Hermes, Markus [ROSEN Group (United States). R and D Dept.

    2005-07-01

    Pipeline deterioration grows progressively with ultimate aging of pipeline systems (on-plot and cross country). This includes both, very localized corrosion as well as increasing failure probability due to fatigue cracking. Limiting regular inspecting activities to the 'scrapable' part of the pipelines only, will ultimately result into a pipeline system with questionable integrity. The confidence level in the integrity of these systems will drop below acceptance levels. Inspection of presently un-inspectable sections of the pipeline system becomes a must. This paper provides information on ROSEN's progress on the 'robotic inspection technology' project. The robotic inspection concept developed by ROSEN is based on a modular toolbox principle. This is mandatory. A universal 'all purpose' robot would not be reliable and efficient in resolving the postulated inspection task. A preparatory Quality Function Deployment (QFD) analysis is performed prior to the decision about the adequate robotic solution. This enhances the serviceability and efficiency of the provided technology. The word 'robotic' can be understood in its full meaning of Recognition - Strategy - Motion - Control. Cooperation of different individual systems with an established communication, e.g. utilizing Bluetooth technology, support the robustness of the ROSEN robotic inspection approach. Beside the navigation strategy, the inspection strategy is also part of the QFD process. Multiple inspection technologies combined on a single carrier or distributed across interacting container must be selected with a clear vision of the particular goal. (author)

  6. High thermal stability solution-processable narrow-band gap molecular semiconductors.

    Science.gov (United States)

    Liu, Xiaofeng; Hsu, Ben B Y; Sun, Yanming; Mai, Cheng-Kang; Heeger, Alan J; Bazan, Guillermo C

    2014-11-19

    A series of narrow-band gap conjugated molecules with specific fluorine substitution patterns has been synthesized in order to study the effect of fluorination on bulk thermal stability. As the number of fluorine substituents on the backbone increase, one finds more thermally robust bulk structures both under inert and ambient conditions as well as an increase in phase transition temperatures in the solid state. When integrated into field-effect transistor devices, the molecule with the highest degree of fluorination shows a hole mobility of 0.15 cm(2)/V·s and a device thermal stability of >300 °C. Generally, the enhancement in thermal robustness of bulk organization and device performance correlates with the level of C-H for C-F substitution. These findings are relevant for the design of molecular semiconductors that can be introduced into optoelectronic devices to be operated under a wide range of conditions.

  7. Increasing Mn substitution in magnetic semiconductors through controlled ambient annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Hollingsworth, J. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States); Bandaru, P.R. [Materials Science Program, Department of Mechanical and Aerospace Engineering, UC San Diego, La Jolla, CA 92093-0411 (United States)], E-mail: pbandaru@ucsd.edu

    2008-06-25

    We report on a controlled ambient annealing technique aimed at increasing the amount of Mn incorporation in III-V semiconductors. The aim is to reduce the number of hole carrier and magnetic element compensating entities, such as Mn interstitials and anti-site defects, to increase the magnetic Curie temperature. The idea is (a) to increase the number of Group III vacancies through annealing in Group V vapor rich conditions and (b) judicious use of crystal field theory to reduce/stabilize Mn interstitials. Our experimental results constitute the highest reportedT{sub c} ({approx}130 K) in Mn doped InSb and Mn doped InP. The possibility of ferrimagnetism in Mn and Cr incorporated GaAs, was noted.

  8. Laser Processed Condensing Heat Exchanger Technology Development

    Science.gov (United States)

    Hansen, Scott; Wright, Sarah; Wallace, Sarah; Hamilton, Tanner; Dennis, Alexander; Zuhlke, Craig; Roth, Nick; Sanders, John

    2017-01-01

    The reliance on non-permanent coatings in Condensing Heat Exchanger (CHX) designs is a significant technical issue to be solved before long-duration spaceflight can occur. Therefore, high reliability CHXs have been identified by the Evolvable Mars Campaign (EMC) as critical technologies needed to move beyond low earth orbit. The Laser Processed Condensing Heat Exchanger project aims to solve these problems through the use of femtosecond laser processed surfaces, which have unique wetting properties and potentially exhibit anti-microbial growth properties. These surfaces were investigated to identify if they would be suitable candidates for a replacement CHX surface. Among the areas researched in this project include microbial growth testing, siloxane flow testing in which laser processed surfaces were exposed to siloxanes in an air stream, and manufacturability.

  9. Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies

    Science.gov (United States)

    Seo, Hosung; Ma, He; Govoni, Marco; Galli, Giulia

    2017-12-01

    The development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion-vacancy pairs are promising qubit candidates in two binary crystals: 4 H -SiC and w -AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. The defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.

  10. Market survey of semiconductors

    International Nuclear Information System (INIS)

    Mackintosh, I.M.; Diegel, D.; Brown, A.; Brinker, C.S. den

    1977-06-01

    Examination of technology and product trends over the range of current and future products in integrated circuits and optoelectronic displays. Analysis and forecast of major economic influences that affect the production costs of integrated circuits and optoelectronic displays. Forecast of the applications and markets for integrated circuits up to 1985 in West Europe, the USA and Japan. Historic development of the semiconductor industry and the prevailing tendencies - factors which influence success in the semiconductor industry. (orig.) [de

  11. Environmental safety issues for semiconductors (research on scarce materials recycling)

    International Nuclear Information System (INIS)

    Izumi, Shigekazu

    2004-01-01

    In the 21st century, in the fabrication of various industrial parts, particularly, current and future electronics devices in the semiconductor industry, environmental safety issues should be carefully considered. We coined a new term, environmental safety issues for semiconductors, considering our semiconductor research and technology which include environmental and ecological factors. The main object of this analysis is to address the present situation of environmental safety problems in the semiconductor industry; some of which are: (1) the generation and use of hazardous toxic gases in the crystal growth procedure such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), (2) the generation of industrial toxic wastes in the semiconductor process and (3) scarce materials recycling from wastes in the MBE and MOCVD growth procedure

  12. ANALYSIS ON TECHNOLOGICAL PROCESSES CLEANING OIL PIPELINES

    Directory of Open Access Journals (Sweden)

    Mariana PǍTRAŞCU

    2015-05-01

    Full Text Available In this paper the researches are presented concerning the technological processes of oil pipelines.We know several technologies and materials used for cleaning the sludge deposits, iron and manganese oxides, dross, stone, etc.de on the inner walls of drinking water pipes or industries.For the oil industry, methods of removal of waste materials and waste pipes and liquid and gas transport networks are operations known long, tedious and expensive. The main methods and associated problems can be summarized as follows: 1 Blowing with compressed air.2 manual or mechanical brushing, sanding with water or dry.3 Wash with water jet of high pressure, solvent or chemical solution to remove the stone and hard deposits.4 The combined methods of cleaning machines that use water jets, cutters, chains, rotary heads cutters, etc.

  13. Attachment to a mass spectrometer for studying the processes of semiconductor compound deposition from a gaseous phase

    International Nuclear Information System (INIS)

    Belousov, V.I.; Zhuravlev, G.I.; Popenko, N.I.; Novozhilov, A.F.; Matveev, I.V.; Murav'ev, V.V.

    1984-01-01

    An attachment to the mass spectrometer for studying the processes of semiconductor compounds deposition from a gaseous phase at the pressure of 1x10 5 Pa and the temperature of 400-1300 K is described. The attachment consists of the Neer ion source with ionization section cooled upto the temperature of liquid nitrogen, a two-zone vacuum furnace, and a quartz epitaxy reactor of the horzontal type.The attachment is equipped with the systems of process gas distribution in 5 flows and temperature stabilization. The rate of mass spectrum recording constitutes 2 mass/s at the resolution being equal to 1000 at the 10% level. The sensitivity at the steam-gas mixture components partial pressure determination constitutes 1x10 -4 Pa

  14. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

    Science.gov (United States)

    Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

    2018-01-01

    In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Nanoscale particles in technological processes of beneficiation

    Directory of Open Access Journals (Sweden)

    Sergey I. Popel

    2014-04-01

    Full Text Available Background: Cavitation is a rather common and important effect in the processes of destruction of nano- and microscale particles in natural and technological processes. A possible cavitation disintegration of polymineral nano- and microparticles, which are placed into a liquid, as a result of the interaction of the particles with collapsed cavitation bubbles is considered. The emphasis is put on the cavitation processes on the interface between liquid and fine solid particles, which is suitable for the description of the real situations.Results: The results are illustrated for the minerals that are most abundant in gold ore. The bubbles are generated by shock loading of the liquid heated to the boiling temperature. Possibilities of cavitation separation of nano- and microscale monomineral fractions from polymineral nano- and microparticles and of the use of cavitation for beneficiation are demonstrated.Conclusion: The cavitation disintegration mechanism is important because the availability of high-grade deposits in the process of mining and production of noble metals is decreasing. This demands for an enhancement of the efficiency in developing low-grade deposits and in reprocessing ore dumps and tailings, which contain a certain amount of noble metals in the form of finely disseminated fractions. The cavitation processes occuring on the interface between liquid and fine solid particles are occasionally more effective than the bulk cavitation processes that were considered earlier.

  16. The FinFET Breakthrough and Networks of Innovation in the Semiconductor Industry, 1980-2005: Applying Digital Tools to the History of Technology.

    Science.gov (United States)

    O'Reagan, Douglas; Fleming, Lee

    2018-01-01

    The "FinFET" design for transistors, developed at the University of California, Berkeley, in the 1990s, represented a major leap forward in the semiconductor industry. Understanding its origins and importance requires deep knowledge of local factors, such as the relationships among the lab's principal investigators, students, staff, and the institution. It also requires understanding this lab within the broader network of relationships that comprise the semiconductor industry-a much more difficult task using traditional historical methods, due to the paucity of sources on industrial research. This article is simultaneously 1) a history of an impactful technology and its social context, 2) an experiment in using data tools and visualizations as a complement to archival and oral history sources, to clarify and explore these "big picture" dimensions, and 3) an introduction to specific data visualization tools that we hope will be useful to historians of technology more generally.

  17. Technological yields of sources for radiation processing

    International Nuclear Information System (INIS)

    Zagorski, Z.P.

    1993-01-01

    The present report is prepared for planners of radiation processing of any material. Calculations are focused on accelerators of electrons, divided into two groups: versatile linacs of energy up to 13 MeV, and accelerators of lower energy, below 2 MeV, of better energy yield but of limited applications. The calculations are connected with the confrontation of the author's technological expectations during the preparation of the linac project in the late '60s, with the results of 25 years of exploitation of the machine. One has to realize that from the 200 kW input power from the mains, only 5 kW of bent and scanned beam is recovered on the conveyor. That power is only partially used for radiation induced phenomena, because of the demanded homogeneity of the dose, of the mode of packing of the object and its shape, of edges of the scanned area and in the spaces between boxes, and of loses during the idle time due to the tuning of the machine and dosimetric operations. The use of lower energy accelerators may be more economical than that of linacs in case of objects of specific type. At the first stage already, that is of the conversion of electrical power into that of low energy electron beam, the yield is 2-3 times better than in the case of linacs. Attention has been paid to the technological aspects of electron beam conversion into the more penetrating Bremsstrahlung similar to gamma radiation. The advantages of technologies, which make possible a control of the shape of the processed object are stressed. Special attention is focused to the relation between the yield of processing and the ratio between the maximum to the minimum dose in the object under the irradiation. (author). 14 refs, 14 figs

  18. Comparing composts formed by different technological processing

    Science.gov (United States)

    Lyckova, B.; Mudrunka, J.; Kucerova, R.; Glogarova, V.

    2017-10-01

    The presented article compares quality of composts which were formed by different technological processes. The subject to comparison was a compost which was created in a closed fermenter where ideal conditions for decomposition and organic substances conversion were ensured, with compost which was produced in an open box of community composting. The created composts were analysed to determine whether it is more important for the final compost to comply with the composting conditions or better sorting of raw materials needed for compost production. The results of the carried out experiments showed that quality of the resulting compost cannot be determined unequivocally.

  19. Technological innovations for a sustainable business model in the semiconductor industry

    Science.gov (United States)

    Levinson, Harry J.

    2014-09-01

    Increasing costs of wafer processing, particularly for lithographic processes, have made it increasingly difficult to achieve simultaneous reductions in cost-per-function and area per device. Multiple patterning techniques have made possible the fabrication of circuit layouts below the resolution limit of single optical exposures but have led to significant increases in the costs of patterning. Innovative techniques, such as self-aligned double patterning (SADP) have enabled good device performance when using less expensive patterning equipment. Other innovations have directly reduced the cost of manufacturing. A number of technical challenges must be overcome to enable a return to single-exposure patterning using short wavelength optical techniques, such as EUV patterning.

  20. Plasma technologies: applications to waste processing

    International Nuclear Information System (INIS)

    Fauchais, P.

    2007-01-01

    Since the 1990's, plasma technologies have found applications in the processing of toxic wastes of military and industrial origin, like the treatment of contaminated solids and low level radioactive wastes, the decontamination of soils etc.. Since the years 2000, this development is becoming exponential, in particular for the processing of municipal wastes and the recovery of their synthesis gas. The advantage of thermal plasmas with respect to conventional combustion techniques are: a high temperature (more than 6000 K), a pyrolysis capability (CO formation instead of CO 2 ), about 90% of available energy above 1500 K (with respect to 23% with flames), a greater energy density, lower gas flow rates, and plasma start-up and shut-down times of only few tenth of seconds. This article presents: 1 - the present day situation of thermal plasmas development; 2 - some general considerations about plasma waste processing; 3 - the plasma processes: liquid toxic wastes, solid wastes (contaminated soils and low level radioactive wastes, military wastes, vitrification of incinerators fly ash, municipal wastes processing, treatment of asbestos fibers, treatment of chlorinated industrial wastes), metallurgy wastes (dusts, aluminium slags), medical and ship wastes, perspectives; 4 -conclusion. (J.S.)

  1. Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

    Science.gov (United States)

    Hong, Augustin Jinwoo

    Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

  2. New technological developments in gas processing

    International Nuclear Information System (INIS)

    Draper, R.C.

    1996-01-01

    The changes that the natural gas industry has undergone over the last few years was discussed. Low natural gas prices forced companies to react to their high reserves replacements costs. They were forced to downsize and undergo major restructuring because they were losing money due to high operating costs; the future for natural gas prices looked pessimistic. The changes have led to a new kind of business practice, namely 'partnering with third party processor', mid-stream companies known as aggregators, to build and operate facilities as part of a move towards cost effective improvements for gas producers. Besides reducing capital and operating costs, the producer under this arrangements can dedicate his capital to finding new gas which is the basis of growth. Recent technological changes in the gas processing industry were also touched upon. These included enhanced technologies such as increased liquid hydrocarbon recovery, segregation of C3+ and C5+, installation of gas separation membrane systems, small sulphur plants, acid gas injection and selective or mixed solvents. Details of some of these technologies were described. 2 refs., 2 figs

  3. Technology development for DUPIC process safeguards

    Energy Technology Data Exchange (ETDEWEB)

    Hong, J S; Kim, H D; Lee, Y G; Kang, H Y; Cha, H R; Byeon, K H; Park, Y S; Choi, H N [Korea Atomic Energy Research Institute, Taejon (Korea, Republic of)

    1997-07-01

    As the strategy for DUPIC(Direct Use of spent PWR fuel In CANDU reactor) process safeguards, the neutron detection method was introduced to account for nuclear materials in the whole DUPIC process by selectively measuring spontaneous fission neutron signals from {sup 244}Cm. DSNC was designed and manufactured to measure the account of curium in the fuel bundle and associated process samples in the DUPIC fuel cycle. The MCNP code had response profile along the length of the CANDU type fuel bundle. It was found experimentally that the output signal variation due to the overall azimuthal asymmetry was less than 0.2%. The longitudinal detection efficiency distribution at every position including both ends was kept less than 2% from the average value. Spent fuel standards almost similar to DUPIC process material were fabricated from a single spent PWR fuel rod and the performance verification of the DSNC is in progress under very high radiation environment. The results of this test will be eventually benchmarked with other sources such as code simulation, chemical analysis and gamma analysis. COREMAS-DUPIC has been developed for the accountability management of nuclear materials treated by DUPIC facility. This system is able to track the controlled nuclear materials maintaining the material inventory in near-real time and to generate the required material accountability records and reports. Concerning the containment and surveillance technology, a focused R and D effort is given to the development of unattended continuous monitoring system. Currently, the component technologies of radiation monitoring and surveillance have been established, and continued R and D efforts are given to the integration of the components into automatic safeguards diagnostics. (author).

  4. Health technology assessment: the process in Brazil.

    Science.gov (United States)

    Lessa, Fernanda; Ferraz, Marcos Bosi

    2017-06-08

    To describe, analyze, and compare the opinions of decisionmakers involved in the health technology assessment (HTA) process in Brazil in 2011. A cross-sectional study was conducted using a structured questionnaire to evaluate the opinions of a convenience sample of health care professionals from both the public and private health care systems (HCS). The survey collected demographic data for each respondent along with their input on national regulations. Data analysis included descriptive statistics, including chi-square tests to compare groups. Of the 200 completed questionnaires, 65% of the respondents were 31-50 years of age; 36% were HCS managers, 49.3% from the public and 50.7% from the private system. The majority of respondents (85%) considered the time permitted for submission of new technology to be inadequate; 88% also stated that the composition of the evaluation committee needed improvement. Respondents from the private health system more frequently stated that submission times were inappropriate (P = 0.019) and that the deadline for a decision by the committee should be defined (P = 0.021), with a maximum of no more than 180 days / 6 months (P < 0.001). Respondents indicated that the HTA process should be improved to meet their expectations. Given that new legislation has been enacted to continuously accept submissions, to make decisions within 180 days, and to expand the committee to represent more stakeholders, most of the respondents concerns have been addressed. This study is valuable as an historical analysis of HTA process improvement. Further surveys are needed to track the new HTA process, its application, and its contribution to health care needs in Brazil.

  5. Fabrication of highly nonlinear germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots using atomization doping process and its optical nonlinearity.

    Science.gov (United States)

    Ju, Seongmin; Watekar, Pramod R; Han, Won-Taek

    2011-01-31

    Germano-silicate glass optical fiber incorporated with PbTe semiconductor quantum dots (SQDs) in the core was fabricated by using the atomization process in modified chemical vapor deposition (MCVD) process. The absorption bands attributed to PbTe semiconductor quantum dots in the fiber core were found to appear at around 687 nm and 1055 nm. The nonlinear refractive index measured by the long-period fiber grating (LPG) pair method upon pumping with laser diode at 976.4 nm was estimated to be ~1.5 × 10(-16) m2/W.

  6. Molecular Engineering of Non-Halogenated Solution-Processable Bithiazole based Electron Transport Polymeric Semiconductors

    KAUST Repository

    Fu, Boyi; Wang, Cheng-Yin; Rose, Bradley Daniel; Jiang, Yundi; Chang, Mincheol; Chu, Ping-Hsun; Yuan, Zhibo; Fuentes-Hernandez, Canek; Bernard, Kippelen; Bredas, Jean-Luc; Collard, David M.; Reichmanis, Elsa

    2015-01-01

    The electron deficiency and trans planar conformation of bithiazole is potentially beneficial for the electron transport performance of organic semiconductors. However, the incorporation of bithiazole into polymers through a facile synthetic strategy remains a challenge. Herein, 2,2’-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienyldiketopyrrolopyrrole-bithiazole), PDBTz. PDBTz exhibited electron mobility reaching 0.3 cm2V-1s-1 in organic field-effect transistor (OFET) configuration; this contrasts with a recently discussed isoelectronic conjugated polymer comprising an electron rich bithiophene and dithienyldiketopyrrolopyrrole, which displays merely hole transport characteristics. This inversion of charge carrier transport characteristics confirms the significant potential for bithiazole in the development of electron transport semiconducting materials. Branched 5-decylheptacyl side chains were incorporated into PDBTz to enhance polymer solubility, particularly in non-halogenated, more environmentally compatible solvents. PDBTz cast from a range of non-halogenated solvents exhibited film morphologies and field-effect electron mobility similar to those cast from halogenated solvents.

  7. Molecular Engineering of Non-Halogenated Solution-Processable Bithiazole based Electron Transport Polymeric Semiconductors

    KAUST Repository

    Fu, Boyi

    2015-04-01

    The electron deficiency and trans planar conformation of bithiazole is potentially beneficial for the electron transport performance of organic semiconductors. However, the incorporation of bithiazole into polymers through a facile synthetic strategy remains a challenge. Herein, 2,2’-bithiazole was synthesized in one step and copolymerized with dithienyldiketopyrrolopyrrole to afford poly(dithienyldiketopyrrolopyrrole-bithiazole), PDBTz. PDBTz exhibited electron mobility reaching 0.3 cm2V-1s-1 in organic field-effect transistor (OFET) configuration; this contrasts with a recently discussed isoelectronic conjugated polymer comprising an electron rich bithiophene and dithienyldiketopyrrolopyrrole, which displays merely hole transport characteristics. This inversion of charge carrier transport characteristics confirms the significant potential for bithiazole in the development of electron transport semiconducting materials. Branched 5-decylheptacyl side chains were incorporated into PDBTz to enhance polymer solubility, particularly in non-halogenated, more environmentally compatible solvents. PDBTz cast from a range of non-halogenated solvents exhibited film morphologies and field-effect electron mobility similar to those cast from halogenated solvents.

  8. Statistical processing of technological and radiochemical data

    International Nuclear Information System (INIS)

    Lahodova, Zdena; Vonkova, Kateřina

    2011-01-01

    The project described in this article had two goals. The main goal was to compare technological and radiochemical data from two units of nuclear power plant. The other goal was to check the collection, organization and interpretation of routinely measured data. Monitoring of analytical and radiochemical data is a very valuable source of knowledge for some processes in the primary circuit. Exploratory analysis of one-dimensional data was performed to estimate location and variability and to find extreme values, data trends, distribution, autocorrelation etc. This process allowed for the cleaning and completion of raw data. Then multiple analyses such as multiple comparisons, multiple correlation, variance analysis, and so on were performed. Measured data was organized into a data matrix. The results and graphs such as Box plots, Mahalanobis distance, Biplot, Correlation, and Trend graphs are presented in this article as statistical analysis tools. Tables of data were replaced with graphs because graphs condense large amounts of information into easy-to-understand formats. The significant conclusion of this work is that the collection and comprehension of data is a very substantial part of statistical processing. With well-prepared and well-understood data, its accurate evaluation is possible. Cooperation between the technicians who collect data and the statistician who processes it is also very important. (author)

  9. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph

    2014-12-17

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  10. Solution processing of polymer semiconductor: Insulator blends-Tailored optical properties through liquid-liquid phase separation control

    KAUST Repository

    Hellmann, Christoph; Treat, Neil D.; Scaccabarozzi, Alberto D.; Razzell Hollis, Joseph; Fleischli, Franziska D.; Bannock, James H.; de Mello, John; Michels, Jasper J.; Kim, Ji-Seon; Stingelin, Natalie

    2014-01-01

    © 2014 Wiley Periodicals, Inc. It has been demonstrated that the 0-0 absorption transition of poly(3-hexylthiophene) (P3HT) in blends with poly(ethylene oxide) (PEO) could be rationally tuned through the control of the liquid-liquid phase separation process during solution deposition. Pronounced J-like aggregation behavior, characteristic for systems of a low exciton band width, was found for blends where the most pronounced liquid-liquid phase separation occurred in solution, leading to domains of P3HT and PEO of high phase purity. Since liquid-liquid phase separation could be readily manipulated either by the solution temperature, solute concentration, or deposition temperature, to name a few parameters, our findings promise the design from the out-set of semiconductor:insulator architectures of pre-defined properties by manipulation of the interaction parameter between the solutes as well as the respective solute:solvent system using classical polymer science principles.

  11. Nature of radiative recombination processes in layered semiconductor PbCdI{sub 2} nanostructural scintillation material

    Energy Technology Data Exchange (ETDEWEB)

    Bukivskii, A.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gnatenko, Yu.P., E-mail: yuriygnatenko@ukr.net [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Piryatinskii, Yu.P. [Institute of Physics of the National Academy of Sciences of Ukraine, 03028 Kyiv (Ukraine); Gamernyk, R.V. [Lviv National University, 8 Kyryl o and Mefodiy Str., 29005 Lviv (Ukraine)

    2017-05-15

    We report on the efficient photoluminescence (PL) and radioluminescence (RL) of the PbI{sub 2} nanoclusters (NCLs), which are naturally formed in the nanostructured Pb{sub 1-X}Cd{sub x}I{sub 2} alloys (X=0.70). Here, we carried out the studies of the nature of radiative recombination processes in the NCLs of various sizes by measuring PL temperature evolution. Our results indicate that at low temperatures the PL is mainly caused by exciton emission and recombination of donor-acceptor pairs, generated in volume of large NCLs. The broad bands, which are associated with the deep intrinsic surface states, including self-trapped excitons (STEs), are dominant in the PL spectra at higher temperature (>100 K). Our work shows that the nature of emission, associated with RL bands is analogous to that for PL bands. It was shown that the investigated nanostructured material is strongly radiation-resistant. Thus, the Pb{sub 1-X}Cd{sub X}I{sub 2} alloys can be considered as new effective layered semiconductor nanostructured materials which can be suitable for the elaboration of perspective semiconductor scintillators. These nanomaterials have promising prospects for applications in new generations of devices for biomedical diagnostics and industrial imaging applications. - Highlights: •The intense PL and RL of nanostructural PbCdI{sub 2} alloys were observed. •The nature of recombination processes of the nanoscintillators was established. •The low temperature PL is caused by exciton and donor-acceptor pairs recombination. •The broad PL bands are due to the deep intrinsic states formed on the NCLs surface. •The PL associated with STEs for NCLs of different sizes was analyzed in detail. •It was shown that the nature of PL and RL spectra is same.

  12. Development of Industrial Process Diagnosis and Measurement Technology

    International Nuclear Information System (INIS)

    Jung, Sung Hee; Kim, Jong Bum; Moon, Jin Ho

    2010-04-01

    Section 1. Industrial Gamma CT Technology for Process Diagnosis: The project is aimed to develop industrial process gamma tomography system for investigation on structural and physical malfunctioning and process media distribution by means of sealed gamma source and radioactive materials. Section 2. Development of RI Hydraulic Detection Technology for Industrial Application: The objectives in this study are to develop the evaluation technology of the hydrological characteristics and the hydraulic detection technology using radioisotope, and to analyze the hydrodynamics and pollutant transport in water environment like surface and subsurface. Section 3. Development of RT-PAT System for Powder Process Diagnosis: The objective of this project is the development of a new radiation technology to improve the accuracy of the determination of moisture content in a powder sample by using radiation source through the so-called RT-PAT (Radiation Technology-Process Analytical Technology), which is a new concept of converging technology between the radiation technology and the process analytical technology

  13. Development of industrial process diagnosis and measurement technology

    International Nuclear Information System (INIS)

    Jung, Sunghee; Kim, Jongbum; Moon, Jinho; Suh, Kyungsuk; Kim, Jongyun

    2012-04-01

    Section1. Industrial Gamma CT Technology for Process Diagnosis The project is aimed to develop industrial process gamma tomography system for investigation on structural and physical malfunctioning and process media distribution by means of sealed gamma source and radioactive materials. Section2. Development of RI Hydraulic Detection Technology for Industrial Application The objectives in this study are to develop the evaluation technology of the hydrological characteristics and the hydraulic detection technology using radioisotope, and to analyze the hydrodynamics and pollutant transport in water environment like surface and subsurface. Section3. Development of RT-PAT System for Powder Process Diagnosis The objective of this project is the development of a new radiation technology to improve the accuracy of the determination of moisture content in a powder sample by using radiation source through the so-called RT-PAT (Radiation Technology-Process Analytical Technology), which is a new concept of converging technology between the radiation technology and the process analytical technology

  14. Control system for technological processes in tritium processing plants with process analysis

    International Nuclear Information System (INIS)

    Retevoi, Carmen Maria; Stefan, Iuliana; Balteanu, Ovidiu; Stefan, Liviu; Bucur, Ciprian

    2005-01-01

    Integration of a large variety of installations and equipment into a unitary system for controlling the technological process in tritium processing nuclear facilities appears to be a rather complex approach particularly when experimental or new technologies are developed. Ensuring a high degree of versatility allowing easy modifications in configurations and process parameters is a major requirement imposed on experimental installations. The large amount of data which must be processed, stored and easily accessed for subsequent analyses imposes development of a large information network based on a highly integrated system containing the acquisition, control and technological process analysis data as well as data base system. On such a basis integrated systems of computation and control able to conduct the technological process could be developed as well protection systems for cases of failures or break down. The integrated system responds to the control and security requirements in case of emergency and of the technological processes specific to the industry that processes radioactive or toxic substances with severe consequences in case of technological failure as in the case of tritium processing nuclear plant. In order to lower the risk technological failure of these processes an integrated software, data base and process analysis system are developed, which, based on identification algorithm of the important parameters for protection and security systems, will display the process evolution trend. The system was checked on a existing plant that includes a removal tritium unit, finally used in a nuclear power plant, by simulating the failure events as well as the process. The system will also include a complete data base monitoring all the parameters and a process analysis software for the main modules of the tritium processing plant, namely, isotope separation, catalytic purification and cryogenic distillation

  15. Plasma spray technology process parameters and applications

    International Nuclear Information System (INIS)

    Sreekumar, K.P.; Karthikeyan, J.; Ananthapadmanabhan, P.V.; Venkatramani, N.; Chatterjee, U.K.

    1991-01-01

    The current trend in the structural design philosophy is based on the use of substrate with the necessary mechanical properties and a thin coating to exhibit surface properties. Plasma spray process is a versatile surface coating technique which finds extensive application in meeting advance technologies. This report describes the plasma spray technique and its use in developing coatings for various applications. The spray system is desribed in detail including the different variables such as power input to the torch, gas flow rate, powder properties, powder injection, etc. and their interrelation in deciding the quality of the coating. A brief write-up on the various plasma spray coatings developed for different applications is also included. (author). 15 refs., 15 figs., 2 tabs

  16. Process Technology for Immobilized Lipasecatalyzed Reactions

    DEFF Research Database (Denmark)

    Xu, Yuan

    Biocatalysis has attracted significant attention recently, mainly due to its high selectivity and potential benefits for sustainability. Applications can be found in biorefineries, turning biomass into energy and chemicals, and also for products in the food and pharmaceutical industries. However......, most applications remain in the production of high-value fine chemicals, primarily because of the expense of introducing new technology. In particular lipasecatalyzed synthesis has already achieved efficient operations for high-value products and more interesting now is to establish opportunities...... for low-value products. In order to guide the industrial implementation of immobilized-lipase catalyzed reactions, especially for highvolume low-value products, a methodological framework for dealing with the technical and scientific challenges and establishing an efficient process via targeted scale...

  17. Software engineering technology transfer: Understanding the process

    Science.gov (United States)

    Zelkowitz, Marvin V.

    1993-01-01

    Technology transfer is of crucial concern to both government and industry today. In this report, the mechanisms developed by NASA to transfer technology are explored and the actual mechanisms used to transfer software development technologies are investigated. Time, cost, and effectiveness of software engineering technology transfer is reported.

  18. Novel Materials, Processing, and Device Technologies for Space Exploration with Potential Dual-Use Applications

    Science.gov (United States)

    Hepp, A. F.; Bailey, S. G.; McNatt, J. S.; Chandrashekhar, M. V. S.; Harris, J. D.; Rusch, A. W.; Nogales, K. A.; Goettsche, K. V.; Hanson, W.; Amos, D.; hide

    2015-01-01

    We highlight results of a broad spectrum of efforts on lower-temperature processing of nanomaterials, novel approaches to energy conversion, and environmentally rugged devices. Solution-processed quantum dots of copper indium chalcogenide semiconductors and multi-walled carbon nanotubes from lower-temperature spray pyrolysis are enabled by novel (precursor) chemistry. Metal-doped zinc oxide (ZnO) nanostructured components of photovoltaic cells have been grown in solution at low temperature on a conductive indium tin oxide substrate. Arrays of ZnO nanorods can be templated and decorated with various semiconductor and metallic nanoparticles. Utilizing ZnO in a more broadly defined energy conversion sense as photocatalysts, unwanted organic waste materials can potentially be re-purposed. Current efforts on charge carrier dynamics in nanoscale electrode architectures used in photoelectrochemical cells for generating solar electricity and fuels are described. The objective is to develop oxide nanowire-based electrode architectures that exhibit improved charge separation, charge collection and allow for efficient light absorption. Investigation of the charge carrier transport and recombination properties of the electrodes will aid in the understanding of how nanowire architectures improve performance of electrodes for dye-sensitized solar cells. Nanomaterials can be incorporated in a number of advanced higher-performance (i.e. mass specific power) photovoltaic arrays. Advanced technologies for the deposition of 4H-silicon carbide are described. The use of novel precursors, advanced processing, and process studies, including modeling are discussed from the perspective of enhancing the performance of this promising material for enabling technologies such as solar electric propulsion. Potential impact(s) of these technologies for a variety of aerospace applications are highlighted throughout. Finally, examples are given of technologies with potential spin-offs for dual

  19. The space technology demand on materials and processes

    Science.gov (United States)

    Dauphin, J.

    1983-01-01

    Space technology requires a rational and accurate policy of materials and processes selection. This paper examines some areas of space technology where materials and process problems have occurred in the past and how they can be solved in the future.

  20. Compact semiconductor lasers

    CERN Document Server

    Yu, Siyuan; Lourtioz, Jean-Michel

    2014-01-01

    This book brings together in a single volume a unique contribution by the top experts around the world in the field of compact semiconductor lasers to provide a comprehensive description and analysis of the current status as well as future directions in the field of micro- and nano-scale semiconductor lasers. It is organized according to the various forms of micro- or nano-laser cavity configurations with each chapter discussing key technical issues, including semiconductor carrier recombination processes and optical gain dynamics, photonic confinement behavior and output coupling mechanisms, carrier transport considerations relevant to the injection process, and emission mode control. Required reading for those working in and researching the area of semiconductors lasers and micro-electronics.

  1. Charged Semiconductor Defects Structure, Thermodynamics and Diffusion

    CERN Document Server

    Seebauer, Edmund G

    2009-01-01

    The technologically useful properties of a solid often depend upon the types and concentrations of the defects it contains. Not surprisingly, defects in semiconductors have been studied for many years, in many cases with a view towards controlling their behavior through various forms of "defect engineering." For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. Charged Semiconductor Defects details the current state of knowledge regarding the properties of the ionized defects that can affect the behavior of advanced transistors, photo-active devices, catalysts, and sensors. Features: Group IV, III-V, and oxide semiconductors; Intrinsic and extrinsic defects; and, P...

  2. Application of Java technology in radiation image processing

    International Nuclear Information System (INIS)

    Cheng Weifeng; Li Zheng; Chen Zhiqiang; Zhang Li; Gao Wenhuan

    2002-01-01

    The acquisition and processing of radiation image plays an important role in modern application of civil nuclear technology. The author analyzes the rationale of Java image processing technology which includes Java AWT, Java 2D and JAI. In order to demonstrate applicability of Java technology in field of image processing, examples of application of JAI technology in processing of radiation images of large container have been given

  3. Quantum dynamical simulation of photoinduced electron transfer processes in dye-semiconductor systems: theory and application to coumarin 343 at TiO₂.

    Science.gov (United States)

    Li, Jingrui; Kondov, Ivan; Wang, Haobin; Thoss, Michael

    2015-04-10

    A recently developed methodology to simulate photoinduced electron transfer processes at dye-semiconductor interfaces is outlined. The methodology employs a first-principles-based model Hamiltonian and accurate quantum dynamics simulations using the multilayer multiconfiguration time-dependent Hartree approach. This method is applied to study electron injection in the dye-semiconductor system coumarin 343-TiO2. Specifically, the influence of electronic-vibrational coupling is analyzed. Extending previous work, we consider the influence of Dushinsky rotation of the normal modes as well as anharmonicities of the potential energy surfaces on the electron transfer dynamics.

  4. COMPLEX PROCESSING TECHNOLOGY OF TOMATO RAW MATERIALS

    Directory of Open Access Journals (Sweden)

    A. M. Gadzhieva

    2015-01-01

    Full Text Available Tomatoes grown in the central and southern parts of the country, which contain 5-6 % of solids, including 0.13 % of pectin, 0.86 % of fat, 0.5 % of organic acids; 0.5 % minerals, etc. were used as a subject of research. These tomatoes, grown in the mountains, on soils with high salinity, contain high amounts of valuable components and have a long-term preservation. For the extraction of valuable components from dried tomato pomace CO2 extraction method was applied. Technological and environmental feasibility of tomatoes stage drying in the atmosphere of inert gas in solar dry kiln were evaluated; production scheme of dried tomatoes is improved; a system for tomato pomace drying is developed; a production scheme of powders of pulp, skin and seeds of tomatoes is developed. Combined method of tomato pomace drying involves the simultaneous use of the electromagnetic field of low and ultra-high frequency and blowing product surface with hot nitrogen. Conducting the drying process in an inert gas atmosphere of nitrogen intensified the process of moisture removing from tomatoes. The expediency of using tomato powder as enriching additive was proved. Based on the study of the chemical composition of the tomato powder made from Dagestan varieties of tomatoes, and on the organoleptic evaluation and physico-chemical studies of finished products, we have proved the best degree of recoverability of tomato powder during the production of reconstituted juice and tomato beverages.

  5. Process technology - rare and refractory metals

    International Nuclear Information System (INIS)

    Gupta, C.K.; Bose, D.K.

    1989-01-01

    India has fairly rich resreves of rare and refractory metals. Abundant sources of ilmenite, rutile, zircon and rare earths are found in the placer deposits of the southern and eastern coasts of the country. Columbite-tantalite occur in mica and the mining belts of Bihar and cassiterite deposits are found in Bastar (Madhya Pradesh). Vanadium as a minor associate occurs in bauxites and in the vast deposits of titaniferrous magnetites. Over the years, research and development and pilot plant works in many research organisations in India have built up a sound technological base in the country for process metallurgy of many refractory and rare earth metals starting from their indigenous sources. The present paper provides a comprehensive view of the developments that have taken place till now on the processing of various refractory and rare earth metals with particular reference to the extensive work carried out at the Department of Atomic Energy. The coverage includes mineral benification separation of individual elements, preparation of pure intermediates, techniques of reduction to metal and final purification. The paper also reviews some of the recent developments that have been taken place in these fields and the potential application of these metals in the foreseeable future. (author). 22 refs., 18 fi g., 7 tabs

  6. The Ventriloquist's Dummy? The Role of Technology in Political Processes

    DEFF Research Database (Denmark)

    Koch, Christian

    2000-01-01

    technology and hire versa. In some phases, actors master the technology to the same extent as a ventriloquist masters his dummy. In other phases, however, actors Jinn themselves working hard, 'negotiating' with the technology. The management of technology is characterized as a consequence of these multiple......This article examines the active role of technology in political processes, drawing on organisational politics and sociology of technology. A case study of the processes of the management of technology demonstrates the multiple roles that technology plays in developing a promoting coalition...

  7. Selective, electrochemical etching of a semiconductor

    Science.gov (United States)

    Dahal, Rajendra P.; Bhat, Ishwara B.; Chow, Tat-Sing

    2018-03-20

    Methods for facilitating fabricating semiconductor structures are provided which include: providing a multilayer structure including a semiconductor layer, the semiconductor layer including a dopant and having an increased conductivity; selectively increasing, using electrochemical processing, porosity of the semiconductor layer, at least in part, the selectively increasing porosity utilizing the increased conductivity of the semiconductor layer; and removing, at least in part, the semiconductor layer with the selectively increased porosity from the multilayer structure. By way of example, the selectively increasing porosity may include selectively, anodically oxidizing, at least in part, the semiconductor layer of the multilayer structure.

  8. Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

    Science.gov (United States)

    Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

    2018-01-01

    The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

  9. Research on process management of nuclear power technological innovation

    International Nuclear Information System (INIS)

    Yang Hua; Zhou Yu

    2005-01-01

    Different from the other technological innovation processes, the technological innovation process of nuclear power engineering project is influenced deeply by the extensive environmental factors, the technological innovation of nuclear power engineering project needs to make an effort to reduce environmental uncertainty. This paper had described the mechanism of connection technological innovation process of nuclear power engineering project with environmental factors, and issued a feasible method based on model of bargaining to incorporate technological innovation process management of nuclear power engineering project with environmental factors. This method has realistic meanings to guide the technological innovation of nuclear power engineering project. (authors)

  10. Ion Implantation Processing Technologies for Telecommunications Electronics

    Energy Technology Data Exchange (ETDEWEB)

    Haynes, T E

    2000-05-01

    The subject CRADA was a collaboration between Oak Ridge National Laboratory and Bell Laboratories, Lucent Technologies (formerly AT and T Bell Laboratories) to explore the development of ion implantation technologies for silicon integrated circuit (IC) manufacturing.

  11. Technology strategy for subsea processing and transport; Technology Target Areas; TTA6 - Subsea processing and transportation

    Energy Technology Data Exchange (ETDEWEB)

    2008-07-01

    OG21 (www.OG21.org) Norway's official technology strategy for the petroleum sector issued a revised strategy document in November 2005 (new strategy planned in 2009). In this document 'Subsea processing and transport' was identified as one of the eight new technology target areas (TTAs). The overall OG21 strategy document is on an aggregated level, and therefore the Board of OG21 decided that a sub-strategy for each TTA was needed. This document proposes the sub-strategy for the technology target area 'Subsea processing and transport' which covers the technology and competence necessary to effectively transport well stream to a platform or to onshore facilities. This includes multiphase flow modelling, flow assurance challenges to avoid problems with hydrates, asphaltenes and wax, subsea or downhole fluid conditioning including bulk water removal, and optionally complete water removal, and sand handling. It also covers technologies to increase recovery by pressure boosting from subsea pumping and/or subsea compression. Finally it covers technologies to facilitate subsea processing such as control systems and power supply. The vision of the Subsea processing and transport TTA is: Norway is to be the leading international knowledge- and technology cluster in subsea processing and transport: Sustain increased recovery and accelerated production on the NCS by applying subsea processing and efficient transport solutions; Enable >500 km gas/condensate multiphase well stream transport; Enable >200 km oil-dominated multiphase well stream transport; Enable well stream transport of complex fluids; Enable subsea separation, boosting compression, and water injection; Enable deepwater developments; Enable environmentally friendly and energy efficient field development. Increase the export of subsea processing and transport technology: Optimize technology from the NCS for application worldwide; Develop new technology that can meet the challenges found in

  12. Chemical mechanical polisher technology for 300mm/0.18-0.13{mu}m semiconductor devices; 300mm/0.18-0.-0.13{mu}m sedai no CMP gijutsu

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, M.; Kobayashi, F. [Ebara Corp., Tokyo (Japan)

    1998-10-20

    Described herein are problems involved in, and development points and measures for chemical mechanical polisher (CMP) technology for the generation of 300mm/0.18 to 0.13{mu}m semiconductor devices. Ebara has developed a CMP system for 300mm devices for I300I and Selete (semiconductor high-technologies). The polishing process conditions are set for the time being based on those for the 200mm devices, and the driver and machine structures are set at 2.25 times larger than those for the 200mm devices. Its space requirement is compacter at 1.3 times increase. The company has adopted a concept of `dry-in and dry-out,` which is not common for a CMP. This needs integration of the washer with the polisher, and aerodynamic designs for dust-free conditions. These are already developed for the 200mm devices, and applicable to the 300mm devices without causing any problem. The special chamber for the conventional CMP can be dispensed with, reducing cost. Expendables, such as slurry pad, are being developed to double their service lives and halve their consumption. 8 figs.

  13. K-mean clustering algorithm for processing signals from compound semiconductor detectors

    International Nuclear Information System (INIS)

    Tada, Tsutomu; Hitomi, Keitaro; Wu, Yan; Kim, Seong-Yun; Yamazaki, Hiromichi; Ishii, Keizo

    2011-01-01

    The K-mean clustering algorithm was employed for processing signal waveforms from TlBr detectors. The signal waveforms were classified based on its shape reflecting the charge collection process in the detector. The classified signal waveforms were processed individually to suppress the pulse height variation of signals due to the charge collection loss. The obtained energy resolution of a 137 Cs spectrum measured with a 0.5 mm thick TlBr detector was 1.3% FWHM by employing 500 clusters.

  14. Uncertainty modeling process for semantic technology

    Directory of Open Access Journals (Sweden)

    Rommel N. Carvalho

    2016-08-01

    Full Text Available The ubiquity of uncertainty across application domains generates a need for principled support for uncertainty management in semantically aware systems. A probabilistic ontology provides constructs for representing uncertainty in domain ontologies. While the literature has been growing on formalisms for representing uncertainty in ontologies, there remains little guidance in the knowledge engineering literature for how to design probabilistic ontologies. To address the gap, this paper presents the Uncertainty Modeling Process for Semantic Technology (UMP-ST, a new methodology for modeling probabilistic ontologies. To explain how the methodology works and to verify that it can be applied to different scenarios, this paper describes step-by-step the construction of a proof-of-concept probabilistic ontology. The resulting domain model can be used to support identification of fraud in public procurements in Brazil. While the case study illustrates the development of a probabilistic ontology in the PR-OWL probabilistic ontology language, the methodology is applicable to any ontology formalism that properly integrates uncertainty with domain semantics.

  15. A Novel Method for Control Performance Assessment with Fractional Order Signal Processing and Its Application to Semiconductor Manufacturing

    Directory of Open Access Journals (Sweden)

    Kai Liu

    2018-06-01

    Full Text Available The significant task for control performance assessment (CPA is to review and evaluate the performance of the control system. The control system in the semiconductor industry exhibits a complex dynamic behavior, which is hard to analyze. This paper investigates the interesting crossover properties of Hurst exponent estimations and proposes a novel method for feature extraction of the nonlinear multi-input multi-output (MIMO systems. At first, coupled data from real industry are analyzed by multifractal detrended fluctuation analysis (MFDFA and the resultant multifractal spectrum is obtained. Secondly, the crossover points with spline fit in the scale-law curve are located and then employed to segment the entire scale-law curve into several different scaling regions, in which a single Hurst exponent can be estimated. Thirdly, to further ascertain the origin of the multifractality of control signals, the generalized Hurst exponents of the original series are compared with shuffled data. At last, non-Gaussian statistical properties, multifractal properties and Hurst exponents of the process control variables are derived and compared with different sets of tuning parameters. The results have shown that CPA of the MIMO system can be better employed with the help of fractional order signal processing (FOSP.

  16. CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

    National Research Council Canada - National Science Library

    An, S

    2001-01-01

    .... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

  17. Low Temperature Processed Complementary Metal Oxide Semiconductor (CMOS) Device by Oxidation Effect from Capping Layer

    KAUST Repository

    Wang, Zhenwei; Al-Jawhari, Hala A.; Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Wei, Nini; Hedhili, Mohamed N.; Alshareef, Husam N.

    2015-01-01

    , which is significantly lower than the temperature generally required to form tin dioxide. Based on this approach, CMOS inverters based entirely on tin oxide TFTs were fabricated. Our method provides a solution to lower the process temperature for tin

  18. Real-time two-dimensional imaging of potassium ion distribution using an ion semiconductor sensor with charged coupled device technology.

    Science.gov (United States)

    Hattori, Toshiaki; Masaki, Yoshitomo; Atsumi, Kazuya; Kato, Ryo; Sawada, Kazuaki

    2010-01-01

    Two-dimensional real-time observation of potassium ion distributions was achieved using an ion imaging device based on charge-coupled device (CCD) and metal-oxide semiconductor technologies, and an ion selective membrane. The CCD potassium ion image sensor was equipped with an array of 32 × 32 pixels (1024 pixels). It could record five frames per second with an area of 4.16 × 4.16 mm(2). Potassium ion images were produced instantly. The leaching of potassium ion from a 3.3 M KCl Ag/AgCl reference electrode was dynamically monitored in aqueous solution. The potassium ion selective membrane on the semiconductor consisted of plasticized poly(vinyl chloride) (PVC) with bis(benzo-15-crown-5). The addition of a polyhedral oligomeric silsesquioxane to the plasticized PVC membrane greatly improved adhesion of the membrane onto Si(3)N(4) of the semiconductor surface, and the potential response was stabilized. The potential response was linear from 10(-2) to 10(-5) M logarithmic concentration of potassium ion. The selectivity coefficients were K(K(+),Li(+))(pot) = 10(-2.85), K(K(+),Na(+))(pot) = 10(-2.30), K(K(+),Rb(+))(pot) =10(-1.16), and K(K(+),Cs(+))(pot) = 10(-2.05).

  19. Semiconductors: Still a Wide Open Frontier for Scientists/Engineers

    Science.gov (United States)

    Seiler, David G.

    1997-10-01

    A 1995 Business Week article described several features of the explosive use of semiconductor chips today: ``Booming'' personal computer markets are driving high demand for microprocessors and memory chips; (2) New information superhighway markets will `ignite' sales of multimedia and communication chips; and (3) Demand for digital-signal-processing and data-compression chips, which speed up video and graphics, is `red hot.' A Washington Post article by Stan Hinden said that technology is creating an unstoppable demand for electronic elements. This ``digital pervasiveness'' means that a semiconductor chip is going into almost every high-tech product that people buy - cars, televisions, video recorders, telephones, radios, alarm clocks, coffee pots, etc. ``Semiconductors are everywhere.'' Silicon and compound semiconductors are absolutely essential and are pervasive enablers for DoD operations and systems. DoD's Critical Technologies Plan of 1991 says that ``Semiconductor materials and microelectronics are critically important and appropriately lead the list of critical defense technologies.'' These trends continue unabated. This talk describes some of the frontiers of semiconductors today and shows how scientists and engineers can effectively contribute to its advancement. Cooperative, multidisciplinary efforts are increasing. Specific examples will be given for scanning capacitance microscopy and thin-film metrology.

  20. Semiconductor spintronics

    CERN Document Server

    Xia, Jianbai; Chang, Kai

    2012-01-01

    Semiconductor Spintronics, as an emerging research discipline and an important advanced field in physics, has developed quickly and obtained fruitful results in recent decades. This volume is the first monograph summarizing the physical foundation and the experimental results obtained in this field. With the culmination of the authors' extensive working experiences, this book presents the developing history of semiconductor spintronics, its basic concepts and theories, experimental results, and the prospected future development. This unique book intends to provide a systematic and modern foundation for semiconductor spintronics aimed at researchers, professors, post-doctorates, and graduate students, and to help them master the overall knowledge of spintronics.

  1. Automation and Integration in Semiconductor Manufacturing

    OpenAIRE

    Liao, Da-Yin

    2010-01-01

    Semiconductor automation originates from the prevention and avoidance of frauds in daily fab operations. As semiconductor technology and business continuously advance and grow, manufacturing systems must aggressively evolve to meet the changing technical and business requirements in this industry. Semiconductor manufacturing has been suffering pains from islands of automation. The problems associated with these systems are limited

  2. Evaluation of the efficiency of the processes of purification of antimony to semiconductor grade purity

    International Nuclear Information System (INIS)

    Walis, L.; Rowinska, L.; Panczyk, E.

    1992-01-01

    A complex of techniques for purification of antimony from arsenic has been examined with the aid of radiotracer 76 As. The investigated processes comprised vacuum distillation, zone melting and remelting of the metal under artificial slags. The purification efficiencies for the above processes were high and amounted to 94% (for 30% of the charge), 50% (for 50% of the charge) and 99.5% (for 60% of the charge), respectively. Attempts were made to determine the kinetics of the separation of arsenic from antimony by distillation. The application of the radioactive tracer made it possible to determine rapidly the distribution of impurities after each stage of the process within a wide concentration range (10 -2 -10 -7 g/g). (author). 7 refs, 4 figs, 6 tabs

  3. Electronic structure of semiconductor interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Herman, F

    1983-02-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered.

  4. Electronic structure of semiconductor interfaces

    International Nuclear Information System (INIS)

    Herman, F.

    1983-01-01

    The study of semiconductor interfaces is one of the most active and exciting areas of current semiconductor research. Because interfaces play a vital role in modern semiconductor technology (integrated circuits, heterojunction lasers, solar cells, infrared detectors, etc.), there is a strong incentive to understand interface properties at a fundamental level and advance existing technology thereby. At the same time, technological advances such as molecular beam epitaxy have paved the way for the fabrication of semiconductor heterojunctions and superlattices of novel design which exhibit unusual electronic, optical, and magnetic properties and offer unique opportunities for fundamental scientific research. A general perspective on this subject is offered treating such topics as the atomic and electronic structure of semiconductor surfaces and interfaces; oxidation and oxide layers; semiconductor heterojunctions and superlattices; rectifying metal-semiconductor contacts; and interface reactions. Recent progress is emphasized and some future directions are indicated. In addition, the role that large-scale scientific computation has played in furthering our theoretical understanding of semiconductor surfaces and interfaces is discussed. Finally, the nature of theoretical models, and the role they play in describing the physical world is considered. (Author) [pt

  5. Adoption of improved oil palm processing technology in Umuahia ...

    African Journals Online (AJOL)

    It was found that a large percentage of the respondents were aware of the 5 improved oil palm processing technologies with friends and relatives as major source of information. Adoption was significant for 3 out of 5 technologies under study. The major constraints to improved oil palm processing technologies were high ...

  6. The Process of Accepting Technology Innovation for Rural Teachers

    Science.gov (United States)

    Cerovski, Jeremy

    2016-01-01

    In order for educational leaders to facilitate effectively the integration of technology, an understanding of the process rural teachers experience with technology integration is critical. The goal of the qualitative study was to discover and understand rural teachers' process for accepting technology innovation in order to improve the…

  7. TECHNOLOGY SUMMARY ADVANCING TANK WASTE RETRIEVAL AND PROCESSING

    Energy Technology Data Exchange (ETDEWEB)

    SAMS TL; MENDOZA RE

    2010-08-11

    This technology overview provides a high-level summary of technologies being investigated and developed by Washington River Protection Solutions (WRPS) to advance Hanford Site tank waste retrieval and processing. Technology solutions are outlined, along with processes and priorities for selecting and developing them.

  8. TECHNOLOGY SUMMARY ADVANCING TANK WASTE RETREIVAL AND PROCESSING

    Energy Technology Data Exchange (ETDEWEB)

    SAMS TL

    2010-07-07

    This technology overview provides a high-level summary of technologies being investigated and developed by Washington River Protection Solutions (WRPS) to advance Hanford Site tank waste retrieval and processing. Technology solutions are outlined, along with processes and priorities for selecting and developing them.

  9. Advanced lithographic filtration and contamination control for 14nm node and beyond semiconductor processes

    Science.gov (United States)

    Varanasi, Rao; Mesawich, Michael; Connor, Patrick; Johnson, Lawrence

    2017-03-01

    Two versions of a specific 2nm rated filter containing filtration medium and all other components produced from high density polyethylene (HDPE), one subjected to standard cleaning, the other to specialized ultra-cleaning, were evaluated in terms of their cleanliness characteristics, and also defectivity of wafers processed with photoresist filtered through each. With respect to inherent cleanliness, the ultraclean version exhibited a 70% reduction in total metal extractables and 90% reduction in organics extractables compared to the standard clean version. In terms of particulate cleanliness, the ultraclean version achieved stability of effluent particles 30nm and larger in about half the time required by the standard clean version, also exhibiting effluent levels at stability almost 90% lower. In evaluating defectivity of blanket wafers processed with photoresist filtered through either version, initial defect density while using the ultraclean version was about half that observed when the standard clean version was in service, with defectivity also falling more rapidly during subsequent usage of the ultraclean version compared to the standard clean version. Similar behavior was observed for patterned wafers, where the enhanced defect reduction was primarily of bridging defects. The filter evaluation and actual process-oriented results demonstrate the extreme value in using filtration designed possessing the optimal intrinsic characteristics, but with further improvements possible through enhanced cleaning processes

  10. Continuously tunable solution-processed organic semiconductor DFB lasers pumped by laser diode

    DEFF Research Database (Denmark)

    Klinkhammer, Sönke; Liu, Xin; Huska, Klaus

    2012-01-01

    The fabrication and characterization of continuously tunable, solution-processed distributed feedback (DFB) lasers in the visible regime is reported. Continuous thin film thickness gradients were achieved by means of horizontal dipping of several conjugated polymer and blended small molecule solu...

  11. Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

    KAUST Repository

    Labram, John G.; Lin, Yenhung; Zhao, Kui; Li, Ruipeng; Thomas, Stuart R.; Semple, James; Androulidaki, Maria; Sygellou, Lamprini; McLachlan, Martyn A.; Stratakis, Emmanuel; Amassian, Aram; Anthopoulos, Thomas D.

    2015-01-01

    reports of the growth of uniform, ultrathin (<5 nm) metal-oxide semiconductors from solution, however, have potentially opened the door to such phenomena manifesting themselves. Here, a theoretical framework is developed for energy quantization

  12. A Technology Approach to Improving Process Management

    Science.gov (United States)

    Dray, Lori; Strasburger, Tom

    2013-01-01

    It is impossible to ignore how technology is infiltrating education. Interactive projectors and other technologies give teachers and students the opportunity to bring lessons to life. Some districts are replacing textbooks with digital content, allowing students to interact with content in new ways. Galion City School District in Galion, Ohio, is…

  13. A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology

    CERN Multimedia

    2002-01-01

    % RD-9 A Demonstrator Analog Signal Processing Circuit in a Radiation Hard SOI-CMOS Technology \\\\ \\\\Radiation hardened SOI-CMOS (Silicon-On-Insulator, Complementary Metal-Oxide- \\linebreak Semiconductor planar microelectronic circuit technology) was a likely candidate technology for mixed analog-digital signal processing electronics in experiments at the future high luminosity hadron colliders. We have studied the analog characteristics of circuit designs realized in the Thomson TCS radiation hard technologies HSOI3-HD. The feature size of this technology was 1.2 $\\mu$m. We have irradiated several devices up to 25~Mrad and 3.10$^{14}$ neutrons cm$^{-2}$. Gain, noise characteristics and speed have been measured. Irradiation introduces a degradation which in the interesting bandwidth of 0.01~MHz~-~1~MHz is less than 40\\%. \\\\ \\\\Some specific SOI phenomena have been studied in detail, like the influence on the noise spectrum of series resistence in the thin silicon film that constitutes the body of the transistor...

  14. Plan for advanced microelectronics processing technology application

    Energy Technology Data Exchange (ETDEWEB)

    Goland, A.N.

    1990-10-01

    The ultimate objective of the tasks described in the research agreement was to identify resources primarily, but not exclusively, within New York State that are available for the development of a Center for Advanced Microelectronics Processing (CAMP). Identification of those resources would enable Brookhaven National Laboratory to prepare a program plan for the CAMP. In order to achieve the stated goal, the principal investigators undertook to meet the key personnel in relevant NYS industrial and academic organizations to discuss the potential for economic development that could accompany such a Center and to gauge the extent of participation that could be expected from each interested party. Integrated of these discussions was to be achieved through a workshop convened in the summer of 1990. The culmination of this workshop was to be a report (the final report) outlining a plan for implementing a Center in the state. As events unfolded, it became possible to identify the elements of a major center for x-ray lithography on Lone Island at Brookhaven National Laboratory. The principal investigators were than advised to substitute a working document based upon that concept in place of a report based upon the more general CAMP workshop originally envisioned. Following that suggestion from the New York State Science and Technology Foundation, the principals established a working group consisting of representatives of the Grumman Corporation, Columbia University, the State University of New York at Stony Brook, and Brookhaven National Laboratory. Regular meetings and additional communications between these collaborators have produced a preproposal that constitutes the main body of the final report required by the contract. Other components of this final report include the interim report and a brief description of the activities which followed the establishment of the X-ray Lithography Center working group.

  15. Ion implantation for semiconductors

    International Nuclear Information System (INIS)

    Grey-Morgan, T.

    1995-01-01

    Full text: Over the past two decades, thousands of particle accelerators have been used to implant foreign atoms like boron, phosphorus and arsenic into silicon crystal wafers to produce special embedded layers for manufacturing semiconductor devices. Depending on the device required, the atomic species, the depth of implant and doping levels are the main parameters for the implantation process; the selection and parameter control is totally automated. The depth of the implant, usually less than 1 micron, is determined by the ion energy, which can be varied between 2 and 600 keV. The ion beam is extracted from a Freeman or Bernas type ion source and accelerated to 60 keV before mass analysis. For higher beam energies postacceleration is applied up to 200 keV and even higher energies can be achieved by mass selecting multiplycharged ions, but with a corresponding reduction in beam output. Depending on the device to be manufactured, doping levels can range from 10 10 to 10 15 atoms/cm 2 and are controlled by implanter beam currents in the range up to 30mA; continuous process monitoring ensures uniformity across the wafer of better than 1 % . As semiconductor devices get smaller, additional sophistication is required in the design of the implanter. The silicon wafers charge electrically during implantation and this charge must be dissipated continuously to reduce the electrical stress in the device and avoid destructive electrical breakdown. Electron flood guns produce low energy electrons (below 10 electronvolts) to neutralize positive charge buildup and implanter design must ensure minimum contamination by other isotopic species and ensure low internal sputter rates. The pace of technology in the semiconductor industry is such that implanters are being built now for 256 Megabit circuits but which are only likely to be widely available five years from now. Several specialist companies manufacture implanter systems, each costing around US$5 million, depending on the

  16. Decision Gate Process for Assessment of a Technology Development Portfolio

    Science.gov (United States)

    Kohli, Rajiv; Fishman, Julianna; Hyatt, Mark

    2012-01-01

    The NASA Dust Management Project (DMP) was established to provide technologies (to TRL 6 development level) required to address adverse effects of lunar dust to humans and to exploration systems and equipment, which will reduce life cycle cost and risk, and will increase the probability of sustainable and successful lunar missions. The technology portfolio of DMP consisted of different categories of technologies whose final product is either a technology solution in itself, or one that contributes toward a dust mitigation strategy for a particular application. A Decision Gate Process (DGP) was developed to assess and validate the achievement and priority of the dust mitigation technologies as the technologies progress through the development cycle. The DGP was part of continuous technology assessment and was a critical element of DMP risk management. At the core of the process were technology-specific criteria developed to measure the success of each DMP technology in attaining the technology readiness levels assigned to each decision gate. The DGP accounts for both categories of technologies and qualifies the technology progression from technology development tasks to application areas. The process provided opportunities to validate performance, as well as to identify non-performance in time to adjust resources and direction. This paper describes the overall philosophy of the DGP and the methodology for implementation for DMP, and describes the method for defining the technology evaluation criteria. The process is illustrated by example of an application to a specific DMP technology.

  17. Fermi-level effects in semiconductor processing: A modeling scheme for atomistic kinetic Monte Carlo simulators

    Science.gov (United States)

    Martin-Bragado, I.; Castrillo, P.; Jaraiz, M.; Pinacho, R.; Rubio, J. E.; Barbolla, J.; Moroz, V.

    2005-09-01

    Atomistic process simulation is expected to play an important role for the development of next generations of integrated circuits. This work describes an approach for modeling electric charge effects in a three-dimensional atomistic kinetic Monte Carlo process simulator. The proposed model has been applied to the diffusion of electrically active boron and arsenic atoms in silicon. Several key aspects of the underlying physical mechanisms are discussed: (i) the use of the local Debye length to smooth out the atomistic point-charge distribution, (ii) algorithms to correctly update the charge state in a physically accurate and computationally efficient way, and (iii) an efficient implementation of the drift of charged particles in an electric field. High-concentration effects such as band-gap narrowing and degenerate statistics are also taken into account. The efficiency, accuracy, and relevance of the model are discussed.

  18. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  19. Single frequency semiconductor lasers

    CERN Document Server

    Fang, Zujie; Chen, Gaoting; Qu, Ronghui

    2017-01-01

    This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

  20. Front-end electronics for multichannel semiconductor detector systems

    CERN Document Server

    Grybos, P

    2010-01-01

    Front-end electronics for multichannel semiconductor detektor systems Volume 08, EuCARD Editorial Series on Accelerator Science and Technology The monograph is devoted to many different aspects related to front-end electronics for semiconductor detector systems, namely: − designing and testing silicon position sensitive detectors for HEP experiments and X-ray imaging applications, − designing and testing of multichannel readout electronics for semiconductor detectors used in X-ray imaging applications, especially for noise minimization, fast signal processing, crosstalk reduction and good matching performance, − optimization of semiconductor detection systems in respect to the effects of radiation damage. The monograph is the result mainly of the author's experience in the above-mentioned areas and it is an attempt of a comprehensive presentation of issues related to the position sensitive detection system working in a single photon counting mode and intended to X-ray imaging applications. The structure...

  1. The competence accumulation process in the technology transference strategy

    OpenAIRE

    Souza, André Silva de; Segatto-Mendes, Andréa Paula

    2008-01-01

    The present article evaluates and measures the technological competence accumulation in an automation area enterprise to distribution centers, Knapp Sudamérica Logistic and Automation Ltd, in the interval of the technology transference process previous period (1998-2001) and during the technology transference process (2002-2005). Therefore, based on an individual case study, the study identified the technology transference strategy and mechanism accorded between the head office and the branch...

  2. Process allowing the spectral compensation of semi-conductor nuclear detector

    International Nuclear Information System (INIS)

    L'Hote, J.P.

    1987-01-01

    The process includes a discriminator whose threshold level is applied to the detector during a fixed time and is externally controlled by a pre-programmed system; the different threshold levels and their application time to the detector are fixed by the nature of the used detector and by the tolerance allowed on the spectral response. The measurements made for each threshold level are corrected by a coefficient depending on the nature of the used detector and the tolerance on the spectral response [fr

  3. Semiconductor nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Marstein Erik Stensrud

    2003-07-01

    This thesis presents a study of two material systems containing semiconductor nanocrystals, namely porous silicon (PSi) films and germanium (Ge) nanocrystals embedded in silicon dioxide (SiO2) films. The PSi films were made by anodic etching of silicon (Si) substrates in an electrolyte containing hydrofluoric acid. The PSi films were doped with erbium (Er) using two different doping methods. electrochemical doping and doping by immersing the PSi films in a solution containing Er. The resulting Er concentration profiles were investigated using scanning electron microscopy (SEN1) combined with energy dispersive X-ray analysis (EDS). The main subject of the work on PSi presented in this thesis was investigating and comparing these two doping methods. Ge nanocrystals were made by implanting Ge ions into Si02 films that were subsequently annealed. However. nanocrystal formation occurred only for certain sets of processing parameters. The dependence of the microstructure of the Ge implanted Si02 films on the processing parameters were therefore investigated. A range of methods were employed for these investigations, including transmission electron microscopy (TEM) combined with EDS, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). The observed structures, ranging from Ge nanocrystals to voids with diameters of several tens of nanometers and Ge rich Si02 films without any nanocrystals is described. A model explaining the void formation is also presented. For certain sets of processing parameters. An accumulation of Ge at the Si-Si02 interface was observed. The effect of this accumulation on the electrical properties of MOS structures made from Ge implanted SiO2 films was investigated using CV-measurements. (Author)

  4. The rates of charge separation and energy destructive charge recombination processes within an organic dyad in presence of metal-semiconductor core shell nanocomposites.

    Science.gov (United States)

    Mandal, Gopa; Bhattacharya, Sudeshna; Das, Subrata; Ganguly, Tapan

    2012-01-01

    Steady state and time resolved spectroscopic measurements were made at the ambient temperature on an organic dyad, 1-(4-Chloro-phenyl)-3-(4-methoxy-naphthalen-1-yl)-propenone (MNCA), where the donor 1-methoxynaphthalene (1 MNT) is connected with the acceptor p-chloroacetophenone (PCA) by an unsaturated olefinic bond, in presence of Ag@TiO2 nanoparticles. Time resolved fluorescence and absorption measurements reveal that the rate parameters associated with charge separation, k(CS), within the dyad increases whereas charge recombination rate k(CR) reduces significantly when the surrounding medium is changed from only chloroform to mixture of chloroform and Ag@TiO2 (noble metal-semiconductor) nanocomposites. The observed results indicate that the dyad being combined with core-shell nanocomposites may form organic-inorganic nanocomposite system useful for developing light energy conversion devices. Use of metal-semiconductor nanoparticles may provide thus new ways to modulate charge recombination processes in light energy conversion devices. From comparison with the results obtained in our earlier investigations with only TiO2 nanoparticles, it is inferred that much improved version of light energy conversion device, where charge-separated species could be protected for longer period of time of the order of millisecond, could be designed by using metal-semiconductor core-shell nanocomposites rather than semiconductor nanoparticles only.

  5. Semiconductor detectors with proximity signal readout

    International Nuclear Information System (INIS)

    Asztalos, Stephen J.

    2012-01-01

    Semiconductor-based radiation detectors are routinely used for the detection, imaging, and spectroscopy of x-rays, gamma rays, and charged particles for applications in the areas of nuclear and medical physics, astrophysics, environmental remediation, nuclear nonproliferation, and homeland security. Detectors used for imaging and particle tracking are more complex in that they typically must also measure the location of the radiation interaction in addition to the deposited energy. In such detectors, the position measurement is often achieved by dividing or segmenting the electrodes into many strips or pixels and then reading out the signals from all of the electrode segments. Fine electrode segmentation is problematic for many of the standard semiconductor detector technologies. Clearly there is a need for a semiconductor-based radiation detector technology that can achieve fine position resolution while maintaining the excellent energy resolution intrinsic to semiconductor detectors, can be fabricated through simple processes, does not require complex electrical interconnections to the detector, and can reduce the number of required channels of readout electronics. Proximity electrode signal readout (PESR), in which the electrodes are not in physical contact with the detector surface, satisfies this need

  6. Report on achievement in the preceding research related to global industry technologies for the global industry technology research and development project. Research on gas systems substituting global warming gases such as PFC used in manufacturing semiconductors; 1998 nendo chikyu kankyo sangyo gijutsu ni kakawaru sendo kenkyu. Handotai seizo nado ni shiyosuru PFC nado no chikyu ondanka gas no daitai gas system no kenkyu

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    The present semiconductor manufacturing process uses a great amount of PFC having large global warming coefficients and extremely long atmospheric life. A research was made particularly on reduction of its emission from etching processes. After introducing how the semiconductor industry has been working conventionally on protection of the global environment, this paper makes clear the purpose and positioning of this preceding research, as well as how it is moved forward. The paper also reports the results of analyzing and discussing the exhaust gases from etching devices using several kinds of substitute PFC gases. Survey results are reported on the possibilities of new substitute gases, plasma decomposition and treatment of exhaust gases, reaction process simulation, and in-situ analyzing and evaluating technologies. Investigations were made on the possibility of using no PFC in wiring processes which consume greater amount of PFC, as well as on wiring techniques using inter-layer insulation film with low dielectric rate, a new wiring structure forming technology, new functional elements, circuits and systems in a wide range. Proposals were given on specific research and development themes and plans that begin in fiscal 1999. (NEDO)

  7. Intrinsic electronic defects and multiple-atom processes in the oxidic semiconductor Ga2O3

    Science.gov (United States)

    Schmeißer, Dieter; Henkel, Karsten

    2018-04-01

    We report on the electronic structure of gallium oxide (Ga2O3) single crystals as studied by resonant photoelectron spectroscopy (resPES). We identify intrinsic electronic defects that are formed by mixed-atomic valence states. We differentiate three coexisting defect states that differ in their electronic correlation energy and their spatial localization lengths. Their relative abundance is described by a fractional ionicity with covalent and ionic bonding contributions. For Ga2O3, our analyses of the resPES data enable us to derive two main aspects: first, experimental access is given to determine the ionicity based on the original concepts of Pauling and Phillips. Second, we report on multi-atomic energy loss processes in the Ga2p core level and X-ray absorption data. The two experimental findings can be explained consistently in the same context of mixed-atomic valence states and intrinsic electronic defects.

  8. Semiconductor spintronics

    International Nuclear Information System (INIS)

    Fabian, J.; Abiague, A.M.; Ertler, Ch.; Stano, P.; Zutic, I.

    2007-01-01

    Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin of magnetism. While metal spintronics has already found its niche in the computer industry - giant magnetoresistance systems are used as hard disk read heads - semiconductor spintronics is vet demonstrate its full potential. This review presents selected themes of semiconductor spintronics, introducing important concepts in spin transport, spin transport, spin injection. Silsbee-Johnson spin-charge coupling, and spin-dependent tunneling, as well as spin relaxation and spin dynamics. The most fundamental spin-dependent interaction in nonmagnetic semiconductors is spin-orbit coupling. Depending on the crystal symmetries of the material, as well as on the structural properties of semiconductor based heterostructures, the spin-orbit coupling takes on different functional forms, giving a nice playground of effective spin-orbit Hamiltonians. The effective Hamiltonians for the most relevant classes of materials and heterostructures are derived here from realistic electronic band structure descriptions. Most semiconductor device systems are still theoretical concepts, waiting for experimental demonstrations. A review of selected proposed, and a few demonstrated devices is presented, with detailed description of two important classes: magnetic resonant tunnel structures and bipolar magnetic diodes and transistors. In view of the importance of ferromagnetic semiconductor material, a brief discussion of diluted magnetic semiconductors is included. In most cases the presentation is of tutorial style, introducing the essential theoretical formalism at an accessible level, with case-study-like illustrations of actual experimental results, as well as with brief

  9. Self-consistent simulation study on magnetized inductively coupled plasma for 450 mm semiconductor wafer processing

    International Nuclear Information System (INIS)

    Lee, Ho-Jun; Kim, Yun-Gi

    2012-01-01

    The characteristics of weakly magnetized inductively coupled plasma (MICP) are investigated using a self-consistent simulation based on the drift–diffusion approximation with anisotropic transport coefficients. MICP is a plasma source utilizing the cavity mode of the low-frequency branch of the right-hand circularly polarized wave. The model system is 700 mm in diameter and has a 250 mm gap between the radio-frequency window and wafer holder. The model chamber size is chosen to verify the applicability of this type of plasma source to the 450 mm wafer process. The effects of electron density distribution and external axial magnetic field on the propagation properties of the plasma wave, including the wavelength modulation and refraction toward the high-density region, are demonstrated. The restricted electron transport and thermal conductivity in the radial direction due to the magnetic field result in small temperature gradient along the field lines and off-axis peak density profile. The calculated impedance seen from the antenna terminal shows that MICP has a resistance component that is two to threefold higher than that of ICP. This property is practically important for large-size, low-pressure plasma sources because high resistance corresponds to high power-transfer efficiency and stable impedance matching characteristics. For the 0.665 Pa argon plasma, MICP shows a radial density uniformity of 6% within 450 mm diameter, which is much better than that of nonmagnetized ICP.

  10. Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

    International Nuclear Information System (INIS)

    Kamimura, Hiroshi; Kato, Masataka.

    1991-01-01

    A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

  11. Parameters modelling of amaranth grain processing technology

    Science.gov (United States)

    Derkanosova, N. M.; Shelamova, S. A.; Ponomareva, I. N.; Shurshikova, G. V.; Vasilenko, O. A.

    2018-03-01

    The article presents a technique that allows calculating the structure of a multicomponent bakery mixture for the production of enriched products, taking into account the instability of nutrient content, and ensuring the fulfilment of technological requirements and, at the same time considering consumer preferences. The results of modelling and analysis of optimal solutions are given by the example of calculating the structure of a three-component mixture of wheat and rye flour with an enriching component, that is, whole-hulled amaranth flour applied to the technology of bread from a mixture of rye and wheat flour on a liquid leaven.

  12. Novel technologies for the lost foam casting process

    Science.gov (United States)

    Jiang, Wenming; Fan, Zitian

    2018-03-01

    Lost foam casting (LFC) is a green precision casting process categorized as a near net forming technology. Yet, despite its popularity, it still suffers from some technological problems, such as poor filling ability of the castings, coarse and non-dense microstructure, low mechanical properties for the Al and Mg LFC processes, and defective carburization for the low carbon steel LFC process. These drawbacks restrict the development and widespread application of the LFC process. To solve these problems, the present study developed several novel LFC technologies, namely, LFC technologies under vacuum and low pressure, vibration solidification, and pressure solidification conditions; expendable shell casting technology; and preparation technology of bimetallic castings based on the LFC process. The results showed that the LFC under vacuum and low pressure evidently improved the filling ability and solved the oxidization problem of the alloys, which is suitable for producing complex and thinwall castings. The vibration and pressure solidifications increased the compactness of the castings and refined the microstructure, significantly improving the mechanical properties of the castings. The expendable shell casting technology could solve the pore, carburization, and inclusion defects of the traditional LFC method, obtaining castings with acceptable surface quality. Moreover, the Al/Mg and Al/Al bimetallic castings with acceptable metallurgical bonding were successfully fabricated using the LFC process. These proposed novel LFC technologies can solve the current technological issues and promote the technological progress of the LFC process.

  13. Integrated modelling in materials and process technology

    DEFF Research Database (Denmark)

    Hattel, Jesper Henri

    2008-01-01

    Integrated modelling of entire process sequences and the subsequent in-service conditions, and multiphysics modelling of the single process steps are areas that increasingly support optimisation of manufactured parts. In the present paper, three different examples of modelling manufacturing...... processes from the viewpoint of combined materials and process modelling are presented: solidification of thin walled ductile cast iron, integrated modelling of spray forming and multiphysics modelling of friction stir welding. The fourth example describes integrated modelling applied to a failure analysis...

  14. Nonlinear dynamics of semiconductors in strong THz electric fields

    DEFF Research Database (Denmark)

    Tarekegne, Abebe Tilahun

    In this thesis, we investigate nonlinear interactions of an intense terahertz (THz) field with semiconductors, in particular the technologically relevant materials silicon and silicon carbide. We reveal the time-resolved dynamics of the nonlinear processes by pump-probe experiments that involve...

  15. Semiconductor structure and recess formation etch technique

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Bin; Sun, Min; Palacios, Tomas Apostol

    2017-02-14

    A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The first semiconductor material is selectively etchable over the second semiconductor material using a first etching process. The first layer is disposed over the second layer. A recess is disposed at least in the first layer. Also described is a method of forming a semiconductor structure that includes a recess. The method includes etching a region in a first layer using a first etching process. The first layer includes a first semiconductor material. The first etching process stops at a second layer beneath the first layer. The second layer includes a second semiconductor material.

  16. Knowledge and cognitive process dimensions of Technology ...

    African Journals Online (AJOL)

    Further research is also needed on the reasons why low cognitive demands are made in the teaching of Technology. .... the NCS (Department of Basic Education, 2011), and the topics ..... In the quantitative phase each lesson objective was classified according .... involves the retrieving (listing) of knowledge from memory (at.

  17. Advanced Manufacturing Office Clean Water Processing Technologies

    Energy Technology Data Exchange (ETDEWEB)

    None

    2018-03-01

    The DOE Office of Energy Efficiency and Renewable Energy (EERE)’s Advanced Manufacturing Office partners with industry, small business, universities, and other stakeholders to identify and invest in emerging technologies with the potential to create high-quality domestic manufacturing jobs and enhance the global competitiveness of the United States.

  18. Quantum transport in semiconductor nanowires

    NARCIS (Netherlands)

    Van Dam, J.

    2006-01-01

    This thesis describes a series of experiments aimed at understanding the low-temperature electrical transport properties of semiconductor nanowires. The semiconductor nanowires (1-100 nm in diameter) are grown from nanoscale gold particles via a chemical process called vapor-liquid-solid (VLS)

  19. Innovative Canadian Process Technology For Biodiesel Production

    Energy Technology Data Exchange (ETDEWEB)

    Johar, Sangat; Norton, Kevin

    2010-09-15

    The need for increasing renewable and alternative energy in the global energy mix has been well recognized by Governments and major scientific forums to reduce climate change impact for this living planet. Biodiesel has very high potential for GHG emission reduction. An innovative process developed in Canada provides solution to mitigate the feedstock, yield and quality issues impacting the industry. The Biox process uses a continuous process which reduces reaction times, provides > 99% yield of high quality biodiesel product. The process is feedstock flexible and can use cheaper higher FFA feedstock providing a sustainable approach for biodiesel production.

  20. Refining processes in the copper casting technology

    OpenAIRE

    Rzadkosz, S.; Kranc, M.; Garbacz-Klempka, A.; Kozana, J.; Piękoś, M.

    2015-01-01

    The paper presents the analysis of technology of copper and alloyed copper destined for power engineering casts. The casts quality was assessed based on microstructure, chemical content analysis and strength properties tests. Characteristic deoxidising (Logas, Cup) and modifying (ODM2, Kupmod2) formulas were used for the copper where high electrical conductivity was required. Chosen examples of alloyed copper with varied Cr and Zr content were studied, and the optimal heat treatment parameter...

  1. Managing Technological Change: The Process is Key

    Science.gov (United States)

    1989-01-01

    performance suggestive of an electronic sweatshop or informa- and the quality of their work lives has been significantly im- tion assembly line than a...changc the rescrvations system, but without docu- systems, databases, and software applications that comprise mentation or access to the person who...and task HAS BEEN SEEN that instead of trying to minimize change. level, the technology’s inherent flexibili- AS A ITATI particularly with respect to

  2. Oxide semiconductors

    CERN Document Server

    Svensson, Bengt G; Jagadish, Chennupati

    2013-01-01

    Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the ""Willardson and Beer"" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scient

  3. Semiconductor statistics

    CERN Document Server

    Blakemore, J S

    1962-01-01

    Semiconductor Statistics presents statistics aimed at complementing existing books on the relationships between carrier densities and transport effects. The book is divided into two parts. Part I provides introductory material on the electron theory of solids, and then discusses carrier statistics for semiconductors in thermal equilibrium. Of course a solid cannot be in true thermodynamic equilibrium if any electrical current is passed; but when currents are reasonably small the distribution function is but little perturbed, and the carrier distribution for such a """"quasi-equilibrium"""" co

  4. Hybrid process technologies in the financial sector

    DEFF Research Database (Denmark)

    Debois, Søren; Hildebrandt, Thomas; Marquard, Morten

    2015-01-01

    Danish mortgage credit institutes deal with highly variable and knowledgeintensive processes. At the same time these processes are required to be strictly conformant to current regulations and laws. In addition different divisions of the business are interested in different views on the same...

  5. Particles in Semiconductor Processing

    NARCIS (Netherlands)

    Knotter, D. Martin; Wali, F.; Kohli, Rajiv; Mittal, Kashmiri L.

    2010-01-01

    Advances in integrated circuits (ICs) have a high impact on society. These advances result in continuously increasing performance of home personal computers, higher density flash memory chips, faster wireless communication in combination with smaller antennas, and all kinds of combinations of the

  6. A Survey on Evaluation Factors for Business Process Management Technology

    NARCIS (Netherlands)

    Mutschler, B.B.; Reichert, M.U.

    2006-01-01

    Estimating the value of business process management (BPM) technology is a difficult task to accomplish. Computerized business processes have a strong impact on an organization, and BPM projects have a long-term cost amortization. To systematically analyze BPM technology from an economic-driven

  7. Sustaining Innovation: Developing an Instructional Technology Assessment Process

    Science.gov (United States)

    Carmo, Monica Cristina

    2013-01-01

    This case study developed an instructional technology assessment process for the Gevirtz Graduate School of Education (GGSE). The theoretical framework of Adelman and Taylor (2001) guided the development of this instructional technology assessment process and the tools to aid in its facilitation. GGSE faculty, staff, and graduate students…

  8. The formalization of innovative processes of food technology equipment

    Directory of Open Access Journals (Sweden)

    V. A. Panfilov

    2016-01-01

    Full Text Available Improving the efficiency of scientific and engineering work to develop methods for converting agricultural raw materials into food is the most important condition of output processing and food sectors of agriculture in the sixth technological structure. The purpose of this article is to formalize the process of creating a progressive technique of food technologies. The process of self-organizing technological systems, presents a model of dual mechanism of control with regard to the processes of food technology. It is shown that in the process of adaptation development of the technological system as purposefully improving the structure and functioning of the system: increases the efficiency of interaction with the external environment. This smoothed out the contradictions of the technological system and its the main thing, the main technical contradiction: «productivity – quality». The steps to be taken to ensure that the technological system of conditions for intensive development. It is concluded that the potential development of some technological systems is hidden in the perspective of automation, and others – is associated with adaptive development processes, in particular machines, devices and bioreactors. The paper shows that innovative and truly breakthrough developments leading to the creation of fundamentally new equipment and new generations of technological systems, possible only with the establishment of patterns of organization, structure, functioning and development of open systems, which are modern technologies of agriculture. The mechanism of control of technological object acts as a core of adaptive development, which implements the anti-entropic entity management object, formalizing the innovation process of innovative food processing technologies.

  9. Emerging Food Processing Technologies and Factors Impacting their Industrial Adoption.

    Science.gov (United States)

    Priyadarshini, Anushree; Rajauria, Gaurav; O'Donnell, Colm P; Tiwari, Brijesh K

    2018-06-04

    Innovative food processing technologies have been widely investigated in food processing research in recent years. These technologies offer key advantages for advancing the preservation and quality of conventional foods, for combatting the growing challenges posed by globalization, increased competitive pressures and diverse consumer demands. However, there is a need to increase the level of adoption of novel technologies to ensure the potential benefits of these technologies are exploited more by the food industry. This review outlines emerging thermal and non-thermal food processing technologies with regard to their mechanisms, applications and commercial aspects. The level of adoption of novel food processing technologies by the food industry is outlined and the factors that impact their industrial adoption are discussed. At an industry level, the technological capabilities of individual companies, their size, market share as well as their absorptive capacity impact adoption of a novel technology. Characteristics of the technology itself such as costs involved in its development and commercialization, associated risks and relative advantage, its level of complexity and compatibility influence the technology's adoption. The review concludes that a deep understanding of the development and application of a technology along with the factors influencing its acceptance are critical for its commercial adoption.

  10. Conjoint Management of Business Processes and Information Technologies

    DEFF Research Database (Denmark)

    Siurdyban, Artur

    and improve business processes. As a consequence, there is a growing need to address managerial aspects of the relationships between information technologies and business processes. The aim of this PhD study is to investigate how the practice of conjoint management of business processes and information...... technologies can be supported and improved. The study is organized into five research papers and this summary. Each paper addresses a different aspect of conjoint management of business processes and information technologies, i.e. problem development and managerial practices on software...... and information technologies in a project environment. It states that both elements are intrinsically related and should be designed and considered together. The second case examines the relationships between information technology management and business process management. It discusses the multi-faceted role...

  11. Modeling of processing technologies in food industry

    Science.gov (United States)

    Korotkov, V. G.; Sagitov, R. F.; Popov, V. P.; Bachirov, V. D.; Akhmadieva, Z. R.; TSirkaeva, E. A.

    2018-03-01

    Currently, the society is facing an urgent need to solve the problems of nutrition (products with increased nutrition value) and to develop energy-saving technologies for food products. A mathematical modeling of heat and mass transfer of polymer materials in the extruder is rather successful these days. Mathematical description of movement and heat exchange during extrusion of gluten-protein-starch-containing material similar to pasta dough in its structure, were taken as a framework for the mathematical model presented in this paper.

  12. Best available technology equivalent controls for B Plant Process Condensate: Tank farm process technology section

    International Nuclear Information System (INIS)

    1988-11-01

    This report evaluates whether proposed controls for the B Plant Process Condensate effluent stream are equivalent to Best Available Technology (BAT) economically achievable. Methods to determine whether the proposed controls for the BCP were equivalent to BAT originated from the Guidance Document for the Hanford Site. The BAT performance standards, which originate from the Clean Water Act, are to be applied to all contaminated liquid effluent discharges currently going to the soil column at the Hanford Site. The B Plant BAT evaluation addressed pollutants that had not been regulated traditionally under Federal or State water-pollution control programs. As a result, only comparisons could be made to existing radiation and water quality standards, and a BAT determination based on the effluent guidelines method (as outlined in the BAT Guidance Document) was not possible. Due to the variability and inconsistency of factors with comparable streams, such as the effluent stream at the Savannah River Plant, a BAT determination by the technology transfer method and treatability studies method was not possible. By using the generic treatment systems method, a one-or two-stage treatment system for dissolved solids removal was concluded to be equivalent to BAT. By performing two economic achievability tests, a one-stage treatment system consisting of mixed bed ion exchange columns was considered to be cost effective and equivalent to BAT. 13 refs., 4 figs., 5 tabs

  13. Musical Instrument Design Process for Mobile Technology

    OpenAIRE

    Barraclough, Timothy J.; Carnegie, Dale A.; Kapur, Ajay

    2015-01-01

    This paper presents the iterative design process based upon multiple rounds of user studies that guided the the design of a novel social music application, Pyxis Minor. The application was designed based on the concept of democratising electronic music creation and performance. This required the development to be based upon user studies to inform and drive the development process in order to create a novel musical interface that can be enjoyed by users of any prior musicianship training.

  14. Theoretical treatment of the processes involving the dipole transitions to the lowest exciton states in hexagonal semiconductors

    Science.gov (United States)

    Semenova, L. E.

    2018-04-01

    The treatment of the two-photon transitions to the An=1 exciton level and the resonant Raman scattering of light by LO-phonons is given for the hexagonal semiconductors A2B6, taking into account the influence of the complex top valence band and anisotropy of the exciton effective mass.

  15. Process Technology for Immobilized LipaseProcess Technology for Immobilized Lipase-catalyzed

    DEFF Research Database (Denmark)

    Xu, Yuan

    Biocatalysis has attracted significant attention recently, mainly due to its high selectivity and potential benefits for sustainability. Applications can be found in biorefineries, turning biomass into energy and chemicals, and also for products in the food and pharmaceutical industries. However......, most applications remain in the production of high-value fine chemicals, primarily because of the expense of introducing new technology. In particular lipasecatalyzed synthesis has already achieved efficient operations for high-value products and more interesting now is to establish opportunities......-down experimental work is described in this thesis. The methodology uses economic targets to test options characterized via a set of tools. In order to validate the methodology, two processes based on immobilized lipase-catalysis have been studied: transesterification and esterification of vegetable oils...

  16. Semiconductor opto-electronics

    CERN Document Server

    Moss, TS; Ellis, B

    1972-01-01

    Semiconductor Opto-Electronics focuses on opto-electronics, covering the basic physical phenomena and device behavior that arise from the interaction between electromagnetic radiation and electrons in a solid. The first nine chapters of this book are devoted to theoretical topics, discussing the interaction of electromagnetic waves with solids, dispersion theory and absorption processes, magneto-optical effects, and non-linear phenomena. Theories of photo-effects and photo-detectors are treated in detail, including the theories of radiation generation and the behavior of semiconductor lasers a

  17. Semiconductor Detectors

    International Nuclear Information System (INIS)

    Cortina, E.

    2007-01-01

    Particle detectors based on semiconductor materials are among the few devices used for particle detection that are available to the public at large. In fact we are surrounded by them in our daily lives: they are used in photoelectric cells for opening doors, in digital photographic and video camera, and in bar code readers at supermarket cash registers. (Author)

  18. FY-2010 Process Monitoring Technology Final Report

    Energy Technology Data Exchange (ETDEWEB)

    Orton, Christopher R.; Bryan, Samuel A.; Casella, Amanda J.; Hines, Wes; Levitskaia, Tatiana G.; henkell, J.; Schwantes, Jon M.; Jordan, Elizabeth A.; Lines, Amanda M.; Fraga, Carlos G.; Peterson, James M.; Verdugo, Dawn E.; Christensen, Ronald N.; Peper, Shane M.

    2011-01-01

    During FY 2010, work under the Spectroscopy-Based Process Monitoring task included ordering and receiving four fluid flow meters and four flow visible-near infrared spectrometer cells to be instrumented within the centrifugal contactor system at Pacific Northwest National Laboratory (PNNL). Initial demonstrations of real-time spectroscopic measurements on cold-stream simulants were conducted using plutonium (Pu)/uranium (U) (PUREX) solvent extraction process conditions. The specific test case examined the extraction of neodymium nitrate (Nd(NO3)3) from an aqueous nitric acid (HNO3) feed into a tri-n-butyl phosphate (TBP)/ n-dodecane solvent. Demonstration testing of this system included diverting a sample from the aqueous feed meanwhile monitoring the process in every phase using the on-line spectroscopic process monitoring system. The purpose of this demonstration was to test whether spectroscopic monitoring is capable of determining the mass balance of metal nitrate species involved in a cross-current solvent extraction scheme while also diverting a sample from the system. The diversion scenario involved diverting a portion of the feed from a counter-current extraction system while a continuous extraction experiment was underway. A successful test would demonstrate the ability of the process monitoring system to detect and quantify the diversion of material from the system during a real-time continuous solvent extraction experiment. The system was designed to mimic a PUREX-type extraction process with a bank of four centrifugal contactors. The aqueous feed contained Nd(NO3)3 in HNO3, and the organic phase was composed of TBP/n-dodecane. The amount of sample observed to be diverted by on-line spectroscopic process monitoring was measured to be 3 mmol (3 x 10-3 mol) Nd3+. This value was in excellent agreement with the 2.9 mmol Nd3+ value based on the known mass of sample taken (i.e., diverted) directly from the system feed solution.

  19. Process for making unsaturated hydrocarbons using microchannel process technology

    Science.gov (United States)

    Tonkovich, Anna Lee [Dublin, OH; Yuschak, Thomas [Lewis Center, OH; LaPlante, Timothy J [Columbus, OH; Rankin, Scott [Columbus, OH; Perry, Steven T [Galloway, OH; Fitzgerald, Sean Patrick [Columbus, OH; Simmons, Wayne W [Dublin, OH; Mazanec, Terry Daymo, Eric

    2011-04-12

    The disclosed invention relates to a process for converting a feed composition comprising one or more hydrocarbons to a product comprising one or more unsaturated hydrocarbons, the process comprising: flowing the feed composition and steam in contact with each other in a microchannel reactor at a temperature in the range from about 200.degree. C. to about 1200.degree. C. to convert the feed composition to the product, the process being characterized by the absence of catalyst for converting the one or more hydrocarbons to one or more unsaturated hydrocarbons. Hydrogen and/or oxygen may be combined with the feed composition and steam.

  20. Application of thermal technologies for processing of radioactive waste

    International Nuclear Information System (INIS)

    2006-12-01

    The primary objective of this publication is to provide an overview of the various thermal technologies for processing various solid, liquid, organic and inorganic radioactive waste streams. The advantages, limitations and operating experience of various thermal technologies are explained. This publication also goes beyond previous work on thermal processes by addressing the applicability of each technology to national or regional nuclear programmes of specific relative size (major advanced programmes, small to medium programmes, and emerging programmes with other nuclear applications). The most commonly used thermal processing technologies are reviewed, and the key factors influencing the selection of thermal technologies as part of a national waste management strategy are discussed. Accordingly, the structure and content of this publication is intended to assist decision-makers, regulators, and those charged with developing such strategies to identify and compare thermal technologies for possible inclusion in the mix of available, country-specific waste management processes. This publication can be used most effectively as an initial cutting tool to identify whether any given technology will best serve the local waste management strategy in terms of the waste generated, technical complexity, available economic resources, environmental impact considerations, and end product (output) of the technology. If multiple thermal technologies are being actively considered, this publication should be instrumental in comparing the technologies and assisting the user to reach an informed decision based on local needs, economics and priorities. A detailed set of conclusions is provided in Section 7

  1. Risk calculations in the manufacturing technology selection process

    DEFF Research Database (Denmark)

    Farooq, S.; O'Brien, C.

    2010-01-01

    Purpose - The purpose of this paper is to present result obtained from a developed technology selection framework and provide a detailed insight into the risk calculations and their implications in manufacturing technology selection process. Design/methodology/approach - The results illustrated...... in the paper are the outcome of an action research study that was conducted in an aerospace company. Findings - The paper highlights the role of risk calculations in manufacturing technology selection process by elaborating the contribution of risk associated with manufacturing technology alternatives...... in the shape of opportunities and threats in different decision-making environments. Practical implications - The research quantifies the risk associated with different available manufacturing technology alternatives. This quantification of risk crystallises the process of technology selection decision making...

  2. Process for separating nitrogen from methane using microchannel process technology

    Science.gov (United States)

    Tonkovich, Anna Lee [Marysville, OH; Qiu, Dongming [Dublin, OH; Dritz, Terence Andrew [Worthington, OH; Neagle, Paul [Westerville, OH; Litt, Robert Dwayne [Westerville, OH; Arora, Ravi [Dublin, OH; Lamont, Michael Jay [Hilliard, OH; Pagnotto, Kristina M [Cincinnati, OH

    2007-07-31

    The disclosed invention relates to a process for separating methane or nitrogen from a fluid mixture comprising methane and nitrogen, the process comprising: (A) flowing the fluid mixture into a microchannel separator, the microchannel separator comprising a plurality of process microchannels containing a sorption medium, the fluid mixture being maintained in the microchannel separator until at least part of the methane or nitrogen is sorbed by the sorption medium, and removing non-sorbed parts of the fluid mixture from the microchannel separator; and (B) desorbing the methane or nitrogen from the sorption medium and removing the desorbed methane or nitrogen from the microchannel separator. The process is suitable for upgrading methane from coal mines, landfills, and other sub-quality sources.

  3. Application of membrane technologies for liquid radioactive waste processing

    International Nuclear Information System (INIS)

    2004-01-01

    Membrane separation processes have made impressive progress since the first synthesis of membranes almost 40 years ago. This progress was driven by strong technological needs and commercial expectations. As a result the range of successful applications of membranes and membrane processes is continuously broadening. In addition, increasing application of membrane processes and technologies lies in the increasing variations of the nature and characteristics of commercial membranes and membrane apparatus. The objective of the report is to review the information on application of membrane technologies in the processing of liquid radioactive waste. The report covers the various types of membranes, equipment design, range of applications, operational experience and the performance characteristics of different membrane processes. The report aims to provide Member States with basic information on the applicability and limitations of membrane separation technologies for processing liquid radioactive waste streams

  4. Food Processing: Technology and Nutritive Value.

    Science.gov (United States)

    Gerbouin-Rerolle, Pascale

    1993-01-01

    This booklet examines the principles of food preservation, food preservation techniques, and nutrition-related consequences of food processing. All foodstuffs in their natural state will deteriorate and become unfit for human consumption due to internal factors, such as enzyme activity, or external factors, such as insects, rodents, and…

  5. Innovative Pedagogical Processes Involving Educational Technology

    DEFF Research Database (Denmark)

    Weitze, Charlotte Lærke

    to create motivating learning for the students. This was done by examining the three actors in the educational institution (students, teachers and the surrounding organisation) individually and relationally. The design-based research project developed knowledge in co-design processes with the three actors...

  6. Technology Summary Advancing Tank Waste Retrieval And Processing

    International Nuclear Information System (INIS)

    Sams, T.L.; Mendoza, R.E.

    2010-01-01

    This technology overview provides a high-level summary of technologies being investigated and developed by Washington River Protection Solutions (WRPS) to advance Hanford Site tank waste retrieval and processing. Technology solutions are outlined, along with processes and priorities for selecting and developing them. This technology overview provides a high-level summary of technologies being investigated, developed, and deployed by WRPS to advance Hanford Site tank waste retrieval and processing. Transformational technologies are needed to complete Hanford tank waste retrieval and treatment by 12/31/2047. Hanford's underground waste storage tanks hold approximately 57 million gallons of radiochemical waste from nuclear defense production - more tank waste than any other site in the United States. In addition, the waste is uniquely complicated because it contains constituents from at least six major radiochemical processes and several lesser processes. It is intermixed and complexed more than any other waste collection known to exist in the world. The multi-faceted nature of Hanford's tank waste means that legally binding agreements in the Federal Facility Agreement and Consent Order (known as the Tri-Party Agreement) and between the Department of Energy (DOE) and its contractors may not be met using current vitrification schedules, plans, and methods. WRPS and the DOE are developing, testing, and deploying technologies to meet the necessary commitments and complete the DOE's River Protection Project (RPP) mission within environmentally acceptable requirements. Technology solutions are outlined, along with processes and priorities for selecting and developing them. DOE's Office of Environmental Management (EM) identifies the environmental management technology needs and the activities necessary to address them. The U.S. Congress then funds these activities through EM or the DOE field offices. Finally, an array of entities that include DOE site prime contractors and

  7. Charge transport in organic semiconductors.

    Science.gov (United States)

    Bässler, Heinz; Köhler, Anna

    2012-01-01

    Modern optoelectronic devices, such as light-emitting diodes, field-effect transistors and organic solar cells require well controlled motion of charges for their efficient operation. The understanding of the processes that determine charge transport is therefore of paramount importance for designing materials with improved structure-property relationships. Before discussing different regimes of charge transport in organic semiconductors, we present a brief introduction into the conceptual framework in which we interpret the relevant photophysical processes. That is, we compare a molecular picture of electronic excitations against the Su-Schrieffer-Heeger semiconductor band model. After a brief description of experimental techniques needed to measure charge mobilities, we then elaborate on the parameters controlling charge transport in technologically relevant materials. Thus, we consider the influences of electronic coupling between molecular units, disorder, polaronic effects and space charge. A particular focus is given to the recent progress made in understanding charge transport on short time scales and short length scales. The mechanism for charge injection is briefly addressed towards the end of this chapter.

  8. Electrostatic coating technologies for food processing.

    Science.gov (United States)

    Barringer, Sheryl A; Sumonsiri, Nutsuda

    2015-01-01

    The application of electrostatics in both powder and liquid coating can improve the quality of food, such as its appearance, aroma, taste, and shelf life. Coatings can be found most commonly in the snack food industry, as well as in confectionery, bakery, meat and cheese processing. In electrostatic powder coating, the most important factors influencing coating quality are powder particle size, density, flowability, charge, and resistivity, as well as the surface properties and characteristics of the target. The most important factors during electrostatic liquid coating, also known as electrohydrodynamic coating, include applied voltage and electrical resistivity and viscosity of the liquid. A good understanding of these factors is needed for the design of optimal coating systems for food processing.

  9. Hydrometallurgical Processing Technology of Titanomagnetite Ores

    Directory of Open Access Journals (Sweden)

    Victor Ivanovich Sachkov

    2017-12-01

    Full Text Available In this paper, we study the possibility of obtaining iron and titanium-vanadium concentrates with highest contents of iron and titanium, respectively, through hydrometallurgical processing of the titanomagnetite ores of the Chineisk deposit. We varied two key parameters to determine the efficiency of the process: (a concentration of leaching solution (ammonium fluoride; and (b acidity of solution. Ammonium fluoride concentration was varied from 0.08 mol/L to 4.2 mol/L with the other fixed parameters. It was shown that optimum ammonium fluoride concentration for leaching the ore is 0.42 mol/L; at these concentrations iron and titanium contents are about 62.8 wt % and 3.5 wt % in solid phase, respectively. The acidity of solution was changed by adding of hydrofluoric acid with varied concentration (from 0.86 mol/L to 4.07 mol/L to ammonium fluoride solution with fixed concentration of 0.42 mol/L. The best results (degree of titanium extraction = 63.7% were obtained when using a solution of hydrofluoric acid with concentration 4.07 mol/L. In this case, the addition of acid makes it possible to increase the Fe/Ti ratio by 3.4 times in comparison with the original ore. Thus, we conclude that acidity and the concentration of ammonium fluoride solution significantly influences the selectivity of the hydrometallurgical process.

  10. Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

    2015-08-24

    Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

  11. Photo-induced transformation process at gold clusters-semiconductor interface: Implications for the complexity of gold clusters-based photocatalysis

    Science.gov (United States)

    Liu, Siqi; Xu, Yi-Jun

    2016-03-01

    The recent thrust in utilizing atomically precise organic ligands protected gold clusters (Au clusters) as photosensitizer coupled with semiconductors for nano-catalysts has led to the claims of improved efficiency in photocatalysis. Nonetheless, the influence of photo-stability of organic ligands protected-Au clusters at the Au/semiconductor interface on the photocatalytic properties remains rather elusive. Taking Au clusters-TiO2 composites as a prototype, we for the first time demonstrate the photo-induced transformation of small molecular-like Au clusters to larger metallic Au nanoparticles under different illumination conditions, which leads to the diverse photocatalytic reaction mechanism. This transformation process undergoes a diffusion/aggregation mechanism accompanied with the onslaught of Au clusters by active oxygen species and holes resulting from photo-excited TiO2 and Au clusters. However, such Au clusters aggregation can be efficiently inhibited by tuning reaction conditions. This work would trigger rational structural design and fine condition control of organic ligands protected-metal clusters-semiconductor composites for diverse photocatalytic applications with long-term photo-stability.

  12. Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

    Science.gov (United States)

    Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

    2015-07-01

    Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

  13. Imaging the motion of electrons across semiconductor heterojunctions

    Science.gov (United States)

    Man, Michael K. L.; Margiolakis, Athanasios; Deckoff-Jones, Skylar; Harada, Takaaki; Wong, E. Laine; Krishna, M. Bala Murali; Madéo, Julien; Winchester, Andrew; Lei, Sidong; Vajtai, Robert; Ajayan, Pulickel M.; Dani, Keshav M.

    2017-01-01

    Technological progress since the late twentieth century has centred on semiconductor devices, such as transistors, diodes and solar cells. At the heart of these devices is the internal motion of electrons through semiconductor materials due to applied electric fields or by the excitation of photocarriers. Imaging the motion of these electrons would provide unprecedented insight into this important phenomenon, but requires high spatial and temporal resolution. Current studies of electron dynamics in semiconductors are generally limited by the spatial resolution of optical probes, or by the temporal resolution of electronic probes. Here, by combining femtosecond pump-probe techniques with spectroscopic photoemission electron microscopy, we imaged the motion of photoexcited electrons from high-energy to low-energy states in a type-II 2D InSe/GaAs heterostructure. At the instant of photoexcitation, energy-resolved photoelectron images revealed a highly non-equilibrium distribution of photocarriers in space and energy. Thereafter, in response to the out-of-equilibrium photocarriers, we observed the spatial redistribution of charges, thus forming internal electric fields, bending the semiconductor bands, and finally impeding further charge transfer. By assembling images taken at different time-delays, we produced a movie lasting a few trillionths of a second of the electron-transfer process in the photoexcited type-II heterostructure—a fundamental phenomenon in semiconductor devices such as solar cells. Quantitative analysis and theoretical modelling of spatial variations in the movie provide insight into future solar cells, 2D materials and other semiconductor devices.

  14. Performance Analyses in an Assistive Technology Service Delivery Process

    DEFF Research Database (Denmark)

    Petersen, Anne Karin

    Performance Analyses in an Assistive Technology Service Delivery Process.Keywords: process model, occupational performance, assistive technologiesThe Poster is about teaching students, using models and theory in education and practice. It is related to Occupational therapy process and professional...... af top-til-bund, klientcentreret og aktivitetsbaseret interventioner, ERGO/MunksgaardFisher, A. &, Griswold, L. A., 2014. Performance Skills. I: B.Schell red.2014 Occupational Therapy. Willard &Spackman’s occupational therapy. -12th ed., p.249-264Cook A.M., Polgar J.M. (2015) Assistive Technologies...

  15. FEATURES OF USING AUGMENTED REALITY TECHNOLOGY TO SUPPORT EDUCATIONAL PROCESSES

    Directory of Open Access Journals (Sweden)

    Yury A. Kravchenko

    2014-01-01

    Full Text Available The paper discusses the concept and technology of augmented reality, the rationale given the relevance and timeliness of its use to support educational processes. Paper is a survey and study of the possibility of using augmented reality technology in education. Architecture is proposed and constructed algorithms of the software system management QR-codes media objects. An overview of the features and uses of augmented reality technology to support educational processes is displayed, as an option of a new form of visual demonstration of complex objects, models and processes

  16. Application of image processing technology in yarn hairiness detection

    Directory of Open Access Journals (Sweden)

    Guohong ZHANG

    2016-02-01

    Full Text Available Digital image processing technology is one of the new methods for yarn detection, which can realize the digital characterization and objective evaluation of yarn appearance. This paper overviews the current status of development and application of digital image processing technology used for yarn hairiness evaluation, and analyzes and compares the traditional detection methods and this new developed method. Compared with the traditional methods, the image processing technology based method is more objective, fast and accurate, which is the vital development trend of the yarn appearance evaluation.

  17. [Mechanized system for planning technological processes].

    Science.gov (United States)

    Pashchenko, V S; Shapiro, A M

    1977-01-01

    A mechanized system for the production processes planning involving the use of an electronic code device for data preparation on a punched tape of the "EPECT-IT" type, at the base of which there are classifiers of standard operations and transitions to individual design members, is considered. A fragment of the classifier and a skeleton diagram of the system are presented. It is pointed out that the use of the system helps improve the quality of the design work, as well as to yield considerable economic advantages. The system is in operation at some enterprises of the medical engineering industry.

  18. Technology Estimating: A Process to Determine the Cost and Schedule of Space Technology Research and Development

    Science.gov (United States)

    Cole, Stuart K.; Reeves, John D.; Williams-Byrd, Julie A.; Greenberg, Marc; Comstock, Doug; Olds, John R.; Wallace, Jon; DePasquale, Dominic; Schaffer, Mark

    2013-01-01

    NASA is investing in new technologies that include 14 primary technology roadmap areas, and aeronautics. Understanding the cost for research and development of these technologies and the time it takes to increase the maturity of the technology is important to the support of the ongoing and future NASA missions. Overall, technology estimating may help provide guidance to technology investment strategies to help improve evaluation of technology affordability, and aid in decision support. The research provides a summary of the framework development of a Technology Estimating process where four technology roadmap areas were selected to be studied. The framework includes definition of terms, discussion for narrowing the focus from 14 NASA Technology Roadmap areas to four, and further refinement to include technologies, TRL range of 2 to 6. Included in this paper is a discussion to address the evaluation of 20 unique technology parameters that were initially identified, evaluated and then subsequently reduced for use in characterizing these technologies. A discussion of data acquisition effort and criteria established for data quality are provided. The findings obtained during the research included gaps identified, and a description of a spreadsheet-based estimating tool initiated as a part of the Technology Estimating process.

  19. Semiconductor Ion Implanters

    International Nuclear Information System (INIS)

    MacKinnon, Barry A.; Ruffell, John P.

    2011-01-01

    In 1953 the Raytheon CK722 transistor was priced at $7.60. Based upon this, an Intel Xeon Quad Core processor containing 820,000,000 transistors should list at $6.2 billion! Particle accelerator technology plays an important part in the remarkable story of why that Intel product can be purchased today for a few hundred dollars. Most people of the mid twentieth century would be astonished at the ubiquity of semiconductors in the products we now buy and use every day. Though relatively expensive in the nineteen fifties they now exist in a wide range of items from high-end multicore microprocessors like the Intel product to disposable items containing 'only' hundreds or thousands like RFID chips and talking greeting cards. This historical development has been fueled by continuous advancement of the several individual technologies involved in the production of semiconductor devices including Ion Implantation and the charged particle beamlines at the heart of implant machines. In the course of its 40 year development, the worldwide implanter industry has reached annual sales levels around $2B, installed thousands of dedicated machines and directly employs thousands of workers. It represents in all these measures, as much and possibly more than any other industrial application of particle accelerator technology. This presentation discusses the history of implanter development. It touches on some of the people involved and on some of the developmental changes and challenges imposed as the requirements of the semiconductor industry evolved.

  20. [Study on baking processing technology of hui medicine Aconitum flavum].

    Science.gov (United States)

    Fu, Xue-yan; Zhang, Bai-tong; Li, Ting-ting; Dong, Lin; Hao, Wen-jing; Yu, Liang

    2013-12-01

    To screen and optimize the processing technology of Aconitum flavum. The acute-toxicity, anti-inflammatory and analgesic experiments were used as indexes. Four processing methods, including decoction, streaming, baking and processing with Chebulae Fructus decoction, were compared to screen the optimum processing method for Aconitum flavum. The baking time was also optimized. The optimal baked technology was that 1-2 mm decoction pieces was baked at 105 degrees C for 3 hours. The baking method is proved to be the optimal processing method of Aconitum flavum. It is shown that this method is simple and stable.

  1. Architectures for Improved Organic Semiconductor Devices

    Science.gov (United States)

    Beck, Jonathan H.

    Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes

  2. Status and prospect of radiation processing technology in Malaysia

    Energy Technology Data Exchange (ETDEWEB)

    Khairul Zaman Hj. Mohd Dahlan; Nahrul Khair Alang Md Rashid [Malaysian Institute for Nuclear Technology Research (MINT), Bangi, Selangor Darul Ehsan (Malaysia)

    2001-03-01

    Radiation processing technology in Malaysia is gaining acceptance by the local industry. The technology has proven to enhance the industrial efficiency, productivity and improve product quality and competitiveness. For many years, variety of radiation crosslinkable materials based on synthetic polymers have been produced either in the form of thermoplastic resins, polymer blends or composites. Today, effort is being focused towards producing environmentally friendly and biodegradable materials using natural polymers. The government of Malaysia through the Malaysian Institute for Nuclear Technology Research (MINT) has developed research program to utilize indigenous materials such as natural rubber, palm oil and polysaccharide. Radiation processing technology is used to process (crosslink/grafting/curing) the materials at a competitive cost. This technology can be applied in several industrial sectors such as automobile, aerospace, construction and healthcare. (author)

  3. Status and prospect of radiation processing technology in Malaysia

    International Nuclear Information System (INIS)

    Khairul Zaman Hj Mohd Dahlan; Nahrul Khair Alang Md Rashid

    2001-01-01

    Radiation processing technology in Malaysia is gaining acceptance by the local industry. The technology has proven to enhance the industrial efficiency, productivity and improve product quality and competitiveness. For many years, variety of radiation crosslinkable materials based on synthetic polymers have been produced either in the form of thermoplastic resins, polymer blends or composites. Today, effort is being focused towards producing environmentally friendly and biodegradable materials using natural polymers. The government of Malaysia through the Malaysian Institute for Nuclear Technology Research (MINT) has developed research program to utilize indigenous materials such as natural rubber, palm oil and polysaccharide. Radiation processing technology is used to process (crosslink/grafting/curing) the materials at a competitive cost. This technology can be applied in several industrial sectors such as automobile, aerospace, construction and healthcare. (author)

  4. Effect of dissipative processes on the dispersion and instability of drift waves in a fine-stratified semiconductor structure

    International Nuclear Information System (INIS)

    Bulgakov, A. A.; Shramkova, O. V.

    2006-01-01

    The damping of waves of the charge carrier density in a periodic semiconductor structure in an external electric field is investigated under the assumption that the period of the structure is much smaller than the electromagnetic radiation wavelength. The threshold conditions for the instability of carrier density waves propagating obliquely to the direction of the electric current are obtained. The existence of a resistive instability that can develop at drift velocities both higher and lower than the plasmon phase velocity is predicted

  5. 5th Conference on Aerospace Materials, Processes, and Environmental Technology

    Science.gov (United States)

    Cook, M. B. (Editor); Stanley, D. Cross (Editor)

    2003-01-01

    Records are presented from the 5th Conference on Aerospace Materials, Processes, and Environmental Technology. Topics included pollution prevention, inspection methods, advanced materials, aerospace materials and technical standards,materials testing and evaluation, advanced manufacturing,development in metallic processes, synthesis of nanomaterials, composite cryotank processing, environmentally friendly cleaning, and poster sessions.

  6. Future Prospects: Ionization Radiation Processing Technology. Chapter 12

    International Nuclear Information System (INIS)

    Rida Tajau

    2017-01-01

    This final chapter concluded that the ionizing radiation processing technology was potentially used to develop new and advanced products. The new advanced products which been discussed was HBPUA, printing ink, PSA, hydrogel, bioplastic, SWA, CNT, RVNRL and others. With this new innovative technology, it will develop the country's economy and increase the productivity of manufacturing industry, medical, science and technology and also strenghten the social science field.

  7. APPLICATION OF CLOUD TECHNOLOGY IN THE STOMATOLOGISTS EDUCATIONAL PROCESS

    Directory of Open Access Journals (Sweden)

    Oksana A. Zorina

    2016-01-01

    Full Text Available Study the possibility of applying cloud technologies for the control of knowledge and the certification of specialists has been studied in the framework of realization of educational programs of internship and residency training in dental specialties. It was found that the management of the educational process in online mode is possible on the basis of distance education technologies using cloud technology

  8. Semiconductor sensors

    International Nuclear Information System (INIS)

    Hartmann, Frank

    2011-01-01

    Semiconductor sensors have been around since the 1950s and today, every high energy physics experiment has one in its repertoire. In Lepton as well as Hadron colliders, silicon vertex and tracking detectors led to the most amazing physics and will continue doing so in the future. This contribution tries to depict the history of these devices exemplarily without being able to honor all important developments and installations. The current understanding of radiation damage mechanisms and recent R and D topics demonstrating the future challenges and possible technical solutions for the SLHC detectors are presented. Consequently semiconductor sensor candidates for an LHC upgrade and a future linear collider are also briefly introduced. The work presented here is a collage of the work of many individual silicon experts spread over several collaborations across the world.

  9. Dry process fuel performance technology development

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Kweon Ho; Kim, K. W.; Kim, B. K. (and others)

    2006-06-15

    The objective of the project is to establish the performance evaluation system of DUPIC fuel during the Phase III R and D. In order to fulfil this objectives, property model development of DUPIC fuel and irradiation test was carried out in Hanaro using the instrumented rig. Also, the analysis on the in-reactor behavior analysis of DUPIC fuel, out-pile test using simulated DUPIC fuel as well as performance and integrity assessment in a commercial reactor were performed during this Phase. The R and D results of the Phase III are summarized as follows: Fabrication process establishment of simulated DUPIC fuel for property measurement, Property model development for the DUPIC fuel, Performance evaluation of DUPIC fuel via irradiation test in Hanaro, Post irradiation examination of irradiated fuel and performance analysis, Development of DUPIC fuel performance code (KAOS)

  10. Dry process fuel performance technology development

    International Nuclear Information System (INIS)

    Kang, Kweon Ho; Kim, K. W.; Kim, B. K.

    2006-06-01

    The objective of the project is to establish the performance evaluation system of DUPIC fuel during the Phase III R and D. In order to fulfil this objectives, property model development of DUPIC fuel and irradiation test was carried out in Hanaro using the instrumented rig. Also, the analysis on the in-reactor behavior analysis of DUPIC fuel, out-pile test using simulated DUPIC fuel as well as performance and integrity assessment in a commercial reactor were performed during this Phase. The R and D results of the Phase III are summarized as follows: Fabrication process establishment of simulated DUPIC fuel for property measurement, Property model development for the DUPIC fuel, Performance evaluation of DUPIC fuel via irradiation test in Hanaro, Post irradiation examination of irradiated fuel and performance analysis, Development of DUPIC fuel performance code (KAOS)

  11. Quantum confined laser devices optical gain and recombination in semiconductors

    CERN Document Server

    Blood, Peter

    2015-01-01

    The semiconductor laser, invented over 50 years ago, has had an enormous impact on the digital technologies that now dominate so many applications in business, commerce and the home. The laser is used in all types of optical fibre communication networks that enable the operation of the internet, e-mail, voice and skype transmission. Approximately one billion are produced each year for a market valued at around $5 billion. Nearly all semiconductor lasers now use extremely thin layers of light emitting materials (quantum well lasers). Increasingly smaller nanostructures are used in the form of quantum dots. The impact of the semiconductor laser is surprising in the light of the complexity of the physical processes that determine the operation of every device. This text takes the reader from the fundamental optical gain and carrier recombination processes in quantum wells and quantum dots, through descriptions of common device structures to an understanding of their operating characteristics. It has a consistent...

  12. Atomic layer deposition for semiconductors

    CERN Document Server

    Hwang, Cheol Seong

    2014-01-01

    This edited volume discusses atomic layer deposition (ALD) for all modern semiconductor devices, moving from the basic chemistry of ALD and modeling of ALD processes to sections on ALD for memories, logic devices, and machines.

  13. A Process for Technology Prioritization in a Competitive Environment

    Science.gov (United States)

    Stephens, Karen; Herman, Melody; Griffin, Brand

    2006-01-01

    This slide presentation reviews NASA's process for prioritizing technology requirements where there is a competitive environment. The In-Space Propulsion Technology (ISPT) project is used to exemplify the process. The ISPT project focuses on the mid level Technology Readiness Level (TRL) for development. These are TRL's 4 through 6, (i.e. Technology Development and Technology Demonstration. The objective of the planning activity is to identify the current most likely date each technology is needed and create ISPT technology development schedules based on these dates. There is a minimum of 4 years between flight and pacing mission. The ISPT Project needed to identify the "pacing mission" for each technology in order to provide funding for each area. Graphic representations show the development of the process. A matrix shows which missions are currently receiving pull from the both the Solar System Exploration and the Sun-Solar System Connection Roadmaps. The timeframes of the pacing missions technologies are shown for various types of propulsion. A pacing mission that was in the near future serves to increase the priority for funding. Adaptations were made when budget reductions precluded the total implementation of the plan.

  14. Metallurgy and purification of semiconductor materials

    International Nuclear Information System (INIS)

    Mughal, G.R.; Ali, M.M.; Ali, I.

    1996-01-01

    In this article the metallurgical aspects of semiconductor science and technology have been stressed here rather than of the physical and electronic aspect of the subject. Semiconductor technology has not merely presented the metallurgist with new challenges. The ease with which the semiconductor planes cleave make possible, the preparation and study of virgin surface. Semiconductor materials were being widely employed in the study of sub-boundaries and structures and can largely contribute to the study of certain aspects of nucleation and growth, precipitation phenomena, mechanical behaviour, in metallurgy. (A.B.)

  15. The process of selecting technology development projects: a practical framework

    NARCIS (Netherlands)

    Herps, Joost M.J.; van Mal, Herman H.; Halman, Johannes I.M.; Martens, Jack H.M.; Borsboom, Ron H.M.

    2003-01-01

    In this article a practical framework is proposed, that can be used to organise the activities related to the selection-process of technology development projects. The framework is based upon recent literature and application at DAF Trucks Company. A technology development project has a long way to

  16. The process of selecting technology development projects : a practical framework

    NARCIS (Netherlands)

    Herps, J.M.J.; Mal, van H.H.; Halman, J.I.M.; Martens, J.H.M.; Borsboom, R.H.M.

    2003-01-01

    In this article a practical framework is proposed, that can be used to organise the activities related to the selection-process of technology development projects. The framework is based upon recent literature and application at DAF Trucks Company. A technology development project has a long way to

  17. Research on Implementing Big Data: Technology, People, & Processes

    Science.gov (United States)

    Rankin, Jenny Grant; Johnson, Margie; Dennis, Randall

    2015-01-01

    When many people hear the term "big data", they primarily think of a technology tool for the collection and reporting of data of high variety, volume, and velocity. However, the complexity of big data is not only the technology, but the supporting processes, policies, and people supporting it. This paper was written by three experts to…

  18. Information Technology in Small Medium Enterprise: Logistic and Production Processes

    Directory of Open Access Journals (Sweden)

    Maurizio Pighin

    2017-01-01

    Full Text Available This paper presents and discuss a survey which describes how small-medium enterprises (SMEs implement and use their information system with respect to their logistic and production processes. The study first describes the rationale of the research, then it identifies the characteristics of the companies and detects their general attitude towards information technology (IT. In the following section the paper presents a set of detailed processes to verify the structure and workflow of companies and how IT supports their processes. In the last part we study the influence of some company characteristics to effective use of processes and to different technological approaches, to support defined logistic and production processes. The novelty of the study and its interest, both in academic and institutional context as in the real world, resides in the opportunity to verify and understand the different attitudes of SMEs towards information technology in defining, organizing, planning and control their processes.

  19. Thermal food processing: new technologies and quality issues

    National Research Council Canada - National Science Library

    Sun, Da-Wen

    2012-01-01

    .... The editor of Thermal Food Processing: New Technologies and Quality Issues presents a comprehensive reference through authors that assist in meeting this challenge by explaining the latest developments and analyzing the latest trends...

  20. TECHNOLOGICAL PROCESSES OF PRODUCTION OF THE MASS FUNCTION CAST BARS

    Directory of Open Access Journals (Sweden)

    A. N. Krutilin

    2012-01-01

    Full Text Available A number of scientifically grounded technical decisions, the whole set of which has enabled to create technological processes of production of high-quality cast bars of mass appointment is offered.

  1. Innovation in Construction: Learning Processes in implementing new Technologies

    DEFF Research Database (Denmark)

    Clausen, Lennie

    1999-01-01

    The article is concerned with the question: How do construction firms implement new technology on construction projects? A model of the implementation process is presented based on a review of the construction innovation literature, innovation theory, and organisational learning theories....

  2. Nonradiative recombination in semiconductors

    CERN Document Server

    Abakumov, VN; Yassievich, IN

    1991-01-01

    In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels. The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier captu

  3. Lattice Location of Transition Metals in Semiconductors

    CERN Multimedia

    2002-01-01

    %IS366 %title\\\\ \\\\Transition metals (TMs) in semiconductors have been the subject of considerable research for nearly 40 years. This is due both to their role as important model impurities for deep centers in semiconductors, and to their technological impact as widespread contaminants in Si processing, where the miniaturization of devices requires to keep their sheet concentration below 10$^{10}$ cm$^{-2}$. As a consequence of the low TM solubility, conventional ion beam methods for direct lattice location have failed completely in identifying the lattice sites of isolated transition metals. Although electron paramagnetic resonance (EPR) has yielded valuable information on a variety of TM centers, it has been unable to detect certain defects considered by theory, e.g., isolated interstitial or substitutional Cu in Si. The proposed identity of other EPR centers such as substitutional Fe in Si, still needs confirmation by additional experimental methods. As a consequence, the knowledge on the structural propert...

  4. Optoelectronic and nonlinear optical processes in low dimensional ...

    Indian Academy of Sciences (India)

    Optoelectronic process; nonlinear optical process; semiconductor. Quest for ever faster and intelligent information processing technologies has sparked ..... Schematic energy level diagram for the proposed 4-level model. States other than the.

  5. The technology management process at the European space agency

    Science.gov (United States)

    Guglielmi, M.; Williams, E.; Groepper, P.; Lascar, S.

    2010-03-01

    Technology is developed at the European Space Agency (ESA) under several programmes: corporate and domain specific, mandatory and optional, with different time horizons and covering different levels of the TRL scale. To improve the transparency and efficiency of the complete process, it was felt necessary to establish an agreed end to end process for the management of all technology R&D activity that could: Include all ESA programmes and consider the requirements of European users Lead to coordinated multi-year work plan and yearly procurement plans Prepare and enable future European space programmes Be harmonized with national initiatives in Europe Thereby establishing the basis for a product policy to reduce risks to technology users, reduce costs and delays, and enhance industrial competitiveness and non-dependence. In response to the above needs, ESA has developed a technology management process called the ESA End-to-End process (E2E), from establishment of the strategy to the monitoring and evaluation of R&D results. In this paper, the complete process will be described in detail including a discussion on its strengths and limitations, and its links to the wider European Harmonization process. The paper will be concluded with the introduction of the ESA Technology Tree: a basic tool to structure and facilitate communication about technology issues.

  6. The Competence Accumulation Process in the Technology Transference Strategy

    Directory of Open Access Journals (Sweden)

    André Silva de Souza

    2008-04-01

    Full Text Available The present article evaluates and measures the technological competence accumulation in an automation area enterprise to distribution centers, Knapp Sudamérica Logistic and Automation Ltd, in the interval of the technology transference process previous period (1998-2001 and during the technology transference process(2002-2005. Therefore, based on an individual case study, the study identified the technology transference strategy and mechanism accorded between the head office and the branch office, the technological functions and activities developed by the receiver and, at last, the critical factors present in this process. The echnological competences accumulation exam was accomplished based on an analytical structure existent in the literature that was adapted to the researched segment analysis. The obtained results showed that the planed, organized, controlled and continuous effort to generating and disseminating knowledge allowed the enterprise to speed up the accumulation process of technological competences promoting the converting of this process from individual level to the organizational one: besides, it also allowed the identification of barriers and facilitators involved in this process.

  7. Digital Process Management Technology for Nuclear Power Plants

    International Nuclear Information System (INIS)

    You, Young M.; Suh, Kune Y.

    2009-01-01

    PHILOSOPHIA, Inc. and Seoul National University have utilized the cutting edge Digital Process Management (DPM) technology for the good of Nuclear Power Plant in recent days. This work represent the overall benefits and the use of this new flow of technology which come into the spotlight. Before realizing the three dimensional (3D) technologies and applying it to real mechanical manufactures and constructions, majority of planning and designing works need huge time and cost even if the process is before the real work. Especially, for a massive construction such as power plant and harbor, without computer-aided technology currently we cannot imagine the whole process can be established easily. Computer-aided Design (CAD) is now main and common technology for manufacturing or construction. This technology lead the other virtual reality 3D technologies into the job site. As a member of these new technologies, DPM is utilized in high-tech and huge scale manufacturing and construction for the benefits of time and cost

  8. Radiation processing technology in the 21st century

    International Nuclear Information System (INIS)

    Miyuki Hagiwara

    1997-01-01

    The address discusses the following issue - towards the 21st century, we are required more and more to create innovative technologies to solve problems about environment, energy, natural resources, materials, health care, food and others which are the great concern to human beings. For the radiation processing technology to survive, it will be required to provide answers to those problems. The use of radiation of polymer modification will remain as an important field of the radiation application. Some other promising polymer processing can be cited as those which will grow in near future; for environment technology - polymeric fibers grafted with ion exchange residues to remove toxic metals for cleaning industrial waste water; For health care technology - crosslinked polyvinylalcohol hydrogel for wound dressing (irradiation of hydrogel); For high performance materials technology - less toxic crosslinked natural rubber latex (irradiation of emulsion), abrasion resistant crosslinked PTFE (irradiation at high temperature)

  9. Consumer Value perceptions of food products from emerging processing technologies

    DEFF Research Database (Denmark)

    Perrea, Toula; Grunert, Klaus G; Krystallis Krontalis, Athanasios

    2015-01-01

    Through a qualitative research approach, the present paper aims to explore the range and type of ‘values’ and ‘costs’ in formulating overall Consumer Value (CV) perceptions, in association with two emerging processing technologies that at the outset are neither distinctly positive nor negative...... in the eyes of consumers, in two culturally variant contexts, namely a Western society where technology is often met with skepticism (i.e., the UK); and a non-Western society where technology plays a reassuring role regarding concerns about food safety and quality (i.e., China). Results reveal that the most......-technology counterparts, who ‘allow’ more room for cultural discrepancies to impact on their CV perceptions. Overall, findings support the view that CV perceptions in the context of food produced by means of emerging processing technologies can be successfully analyzed using a multidimensional conceptualization, where CV...

  10. Impurities in alfalfa seed and their impact on processing technology

    OpenAIRE

    Đokić, Dragoslav; Stanisavljević, Rade; Marković, Jordan; Terzić, Dragan; Anđelković, Bojan

    2012-01-01

    The aim of this research was to determine relevant parameters and optimal alfalfa seed processing technology by a comparative analysis of two systems of machinery for processing natural alfalfa seed of different purity (59.0% and 71.0%) and with different content of impurities. The relevant parameters monitored during the test were: pure seed (%), weed seeds and seeds of other crops (%), inert matter (%), amount of processed seed (kg), seed processing time (min), consumption of steel powder (...

  11. Semiconductors for plasmonics and metamaterials

    DEFF Research Database (Denmark)

    Naik, G.V.; Boltasseva, Alexandra

    2010-01-01

    Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals with semiconduct......Plasmonics has conventionally been in the realm of metal-optics. However, conventional metals as plasmonic elements in the near-infrared (NIR) and visible spectral ranges suffer from problems such as large losses and incompatibility with semiconductor technology. Replacing metals...... with semiconductors can alleviate these problems if only semiconductors could exhibit negative real permittivity. Aluminum doped zinc oxide (AZO) is a low loss semiconductor that can show negative real permittivity in the NIR. A comparative assessment of AZO-based plasmonic devices such as superlens and hyperlens...... with their metal-based counterparts shows that AZO-based devices significantly outperform at a wavelength of 1.55 µm. This provides a strong stimulus in turning to semiconductor plasmonics at the telecommunication wavelengths. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)....

  12. The advances in radiation processing technology and some suggestion

    International Nuclear Information System (INIS)

    Wu Jilan; Wei Genshuan; Ha Hongfei

    1992-01-01

    Radiation processing technology has been made great advances in the last decade especially in the developed countries. According to the conservative evaluation, the total sales of radiation processing products approached about 2-3 billion U.S. dollar in 1981, there after, the processing capacity at least doubles. Now, the intensities of 60 Co in use for radiation processing are (5.55-7.40) x 10 18 Bq and there are about 600 sets of electron accelerators for radiation processing. The total sales of radiation processing products are supposed to be over 10 billion U.S. dollar in 1989. However, there are only several fields commercialized. In great scale, such as radiation crosslinked heat shrinkable materials, radiation crosslinked electric cables and wires, and radiation sterilization of medical articles. In China, the radiation processing technology has been developed rapidly in the past years, but the processing capacity is still lower in comparing with developed countries. We suggest that much attention should be devoted to the training of the workers, technicians and managers. The basic theoretical and new technological researches are the keys for developing radiation processing technology at high speed in our country

  13. Reactor and process design in sustainable energy technology

    CERN Document Server

    Shi, Fan

    2014-01-01

    Reactor Process Design in Sustainable Energy Technology compiles and explains current developments in reactor and process design in sustainable energy technologies, including optimization and scale-up methodologies and numerical methods. Sustainable energy technologies that require more efficient means of converting and utilizing energy can help provide for burgeoning global energy demand while reducing anthropogenic carbon dioxide emissions associated with energy production. The book, contributed by an international team of academic and industry experts in the field, brings numerous reactor design cases to readers based on their valuable experience from lab R&D scale to industry levels. It is the first to emphasize reactor engineering in sustainable energy technology discussing design. It provides comprehensive tools and information to help engineers and energy professionals learn, design, and specify chemical reactors and processes confidently. Emphasis on reactor engineering in sustainable energy techn...

  14. Semiconductor radiation detectors. Device physics

    International Nuclear Information System (INIS)

    Lutz, G.

    2007-01-01

    Starting from basic principles, the author, whose own contributions to these developments have been significant, describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. This development was stimulated by requirements in elementary particle physics where it has led to important scientific discoveries. It has now spread to many other fields of science and technology. The book is written in a didactic way and includes an introduction to semiconductor physics. The working principles of semiconductor radiation detectors are explained in an intuitive way, followed by formal quantitative analysis. Broad coverage is also given to electronic signal readout and to the subject of radiation damage. The book is the first to comprehensively cover the semiconductor radiation detectors currently in use. It is useful as a teaching guide and as a reference work for research and applications. (orig.)

  15. Compound semiconductor device modelling

    CERN Document Server

    Miles, Robert

    1993-01-01

    Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum­ mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at...

  16. Semiconductor Nanocrystals for Biological Imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fu, Aihua; Gu, Weiwei; Larabell, Carolyn; Alivisatos, A. Paul

    2005-06-28

    Conventional organic fluorophores suffer from poor photo stability, narrow absorption spectra and broad emission feature. Semiconductor nanocrystals, on the other hand, are highly photo-stable with broad absorption spectra and narrow size-tunable emission spectra. Recent advances in the synthesis of these materials have resulted in bright, sensitive, extremely photo-stable and biocompatible semiconductor fluorophores. Commercial availability facilitates their application in a variety of unprecedented biological experiments, including multiplexed cellular imaging, long-term in vitro and in vivo labeling, deep tissue structure mapping and single particle investigation of dynamic cellular processes. Semiconductor nanocrystals are one of the first examples of nanotechnology enabling a new class of biomedical applications.

  17. Distributed automatic control of technological processes in conditions of weightlessness

    Science.gov (United States)

    Kukhtenko, A. I.; Merkulov, V. I.; Samoylenko, Y. I.; Ladikov-Royev, Y. P.

    1986-01-01

    Some problems associated with the automatic control of liquid metal and plasma systems under conditions of weightlessness are examined, with particular reference to the problem of stability of liquid equilibrium configurations. The theoretical fundamentals of automatic control of processes in electrically conducting continuous media are outlined, and means of using electromagnetic fields for simulating technological processes in a space environment are discussed.

  18. Technology for the product and process data base

    Science.gov (United States)

    Barnes, R. D.

    1984-01-01

    The computerized product and process data base is increasingly recognized to be the cornerstone component of an overall system aimed at the integrated automation of the industrial processes of a given company or enterprise. The technology needed to support these more effective computer integrated design and manufacturing methods, especially the concept of 3-D computer-sensible product definitions rather than engineering drawings, is not fully available and rationalized. Progress is being made, however, in bridging this technology gap with concentration on the modeling of sophisticated information and data structures, high-performance interactive user interfaces and comprehensive tools for managing the resulting computerized product definition and process data base.

  19. Application of information and communication technology in process reengineering

    Directory of Open Access Journals (Sweden)

    Đurović Aleksandar M.

    2014-01-01

    Full Text Available This paper examines the role of information communication technologies in reengineering processes. General analysis of a process will show that information communication technologies improve their efficiency. Reengineering model based on the BPMN 2.0 standard will be applied to the process of seeking internship/job by students from Faculty of Transport and Traffic Engineering. In the paper, after defining the technical characteristics and required functionalities, web / mobile application is proposed, enabling better visibility of traffic engineers to companies seeking that education profile.

  20. Electronic technology

    International Nuclear Information System (INIS)

    Kim, Jin Su

    2010-07-01

    This book is composed of five chapters, which introduces electronic technology about understanding of electronic, electronic component, radio, electronic application, communication technology, semiconductor on its basic, free electron and hole, intrinsic semiconductor and semiconductor element, Diode such as PN junction diode, characteristic of junction diode, rectifier circuit and smoothing circuit, transistor on structure of transistor, characteristic of transistor and common emitter circuit, electronic application about electronic equipment, communication technology and education, robot technology and high electronic technology.

  1. Fiscal 2000 survey report on the survey of trends of quantum beam process technologies for development of high-speed large-capacity digital electronic information devices; 2000 nendo kosoku daiyoryo digital denshi joho device kaihatsu no tame no ryoshi beam process technology no doko chosa hokokusho

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2001-03-01

    The effort clarifies the tasks and problems of the next-generation WDM (wavelength division multiplexing) device, the tasks and problems of domestic information digital devices, and the characteristics, and matters wanting further development, of quantum beam technologies that are to contribute to the development of the said devices. In concrete terms, quantum process technologies involving the ultralow energy ion beam, gas cluster ion beam, electron beam, laser beam, radiation, and the like, are to be studied and developed as device processes, and the product of the effort will be utilized for accelerating the currently difficult development of the semiconductor laser diode, high-speed photoelectric conversion diode, optical circuit device, and the next-generation plastic liquid crystal display device. That is to say, process technologies for a high-speed undamaged compound semiconductor device, high-precision optical circuit device, and a totally plastic liquid crystal display device will be established, and verified as valid. Furthermore, novel digital devices will be developed. In this research and development work, manufacturing process technologies will also be established, which as practical technologies will clear the rigorous goals that the industry demand for process stability, process yield, process amount, and the like. (NEDO)

  2. Mobile Technology and CAD Technology Integration in Teaching Architectural Design Process for Producing Creative Product

    Science.gov (United States)

    Bin Hassan, Isham Shah; Ismail, Mohd Arif; Mustafa, Ramlee

    2011-01-01

    The purpose of this research is to examine the effect of integrating the mobile and CAD technology on teaching architectural design process for Malaysian polytechnic architectural students in producing a creative product. The website is set up based on Caroll's minimal theory, while mobile and CAD technology integration is based on Brown and…

  3. Magnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Bihler, Christoph

    2009-04-15

    In this thesis we investigated in detail the properties of Ga{sub 1-x}Mn{sub x}As, Ga{sub 1-x}Mn{sub x}P, and Ga{sub 1-x}Mn{sub x}N dilute magnetic semiconductor thin films with a focus on the magnetic anisotropy and the changes of their properties upon hydrogenation. We applied two complementary spectroscopic techniques to address the position of H in magnetic semiconductors: (i) Electron paramagnetic resonance, which provides direct information on the symmetry of the crystal field of the Mn{sup 2+} atoms and (ii) x-ray absorption fine structure analysis which allows to probe the local crystallographic neighborhood of the absorbing Mn atom via analysing the fine structure at the Mn K absorption edge. Finally, we discussed the obstacles that have to be overcome to achieve Curie temperatures above the current maximum in Ga{sub 1-x}Mn{sub x}As of 185 K. Here, we outlined in detail the generic problem of the formation of precipitates at the example of Ge:MN. (orig.)

  4. Technology Summary Advancing Tank Waste Retreival And Processing

    International Nuclear Information System (INIS)

    Sams, T.L.

    2010-01-01

    This technology overview provides a high-level summary of technologies being investigated and developed by Washington River Protection Solutions (WRPS) to advance Hanford Site tank waste retrieval and processing. Technology solutions are outlined, along with processes and priorities for selecting and developing them. Hanford's underground waste storage tanks hold approximately 57 million gallons of radiochemical waste from nuclear defense production - more tank waste than any other site in the United States. In addition, the waste is uniquely complicated since it contains constituents from at least six major radiochemical processes and several lesser processes. It is intermixed and complexed more than any other waste collection known to exist in the world. The multi-faceted nature of Hanford's tank waste means that legally binding agreements in the Federal Facility Agreement and Consent Order (known as the Tri-Party Agreement) and between the Department of Energy (DOE) and its contractors may not be met using current vitrification schedules, plans and methods. WRPS and the DOE are therefore developing, testing, and deploying technologies to ensure that they can meet the necessary commitments and complete the DOE's River Protection Project (RPP) mission within environmentally acceptable requirements. Technology solutions are outlined, along with processes and priorities for selecting and developing them.

  5. BATCH PROCESS INTEGRATION OF APPLYING TECHNOLOGY OF ACID CARMINIC PINCH

    OpenAIRE

    Erazo E., Raymundo; Cárdenas R., Jorge L.; Woolcott H., Juan C.

    2014-01-01

    This work was developed in order to implement the PINCH technology integration batch process for carminic acid. The method used consisted of the application of the concepts of bottle necks total process (OPB) together with part-time models (TAM) and time fractionated! (TSM). The drying operation is identified as the rate limiting step of the process identifying it as an OPB plant capacity. The extraction yield was 95% w / p carminic acid with an energy savings of approximately 60% of the...

  6. The Impact Of Optical Storage Technology On Image Processing Systems

    Science.gov (United States)

    Garges, Daniel T.; Durbin, Gerald T.

    1984-09-01

    The recent announcement of commercially available high density optical storage devices will have a profound impact on the information processing industry. Just as the initial introduction of random access storage created entirely new processing strategies, optical technology will allow dramatic changes in the storage, retrieval, and dissemination of engineering drawings and other pictorial or text-based documents. Storage Technology Corporation has assumed a leading role in this arena with the introduction of the 7600 Optical Storage Subsystem, and the formation of StorageTek Integrated Systems, a subsidiary chartered to incorporate this new technology into deliverable total systems. This paper explores the impact of optical storage technology from the perspective of a leading-edge manufacturer and integrator.

  7. [Automation and organization of technological process of urinalysis].

    Science.gov (United States)

    Kolenkin, S M; Kishkun, A A; Kol'chenko, O L

    2000-12-01

    Results of introduction into practice of a working model of industrial technology of laboratory studies and KONE Specific Supra and Miditron M devices are shown as exemplified by clinical analysis of the urine. This technology helps standardize all stages and operations, improves the efficiency of quality control of laboratory studies, rationally organizes the work at all stages of the process, creates a system for permanent improvement of the efficiency of investigations at the preanalytical, analytical, and postanalytical stages of technological process of laboratory studies. As a result of introduction of this technology into laboratory practice, violations of quality criteria of clinical urinalysis decreased from 15 to 8% at the preanalytical stage and from 6 to 3% at the analytical stage. Automation of the analysis decreased the need in reagents 3-fold and improved the productivity at the analytical stage 4-fold.

  8. Hybrid microcircuit technology handbook materials, processes, design, testing and production

    CERN Document Server

    Licari, James J

    1998-01-01

    The Hybrid Microcircuit Technology Handbook integrates the many diverse technologies used in the design, fabrication, assembly, and testing of hybrid segments crucial to the success of producing reliable circuits in high yields. Among these are: resistor trimming, wire bonding, die attachment, cleaning, hermetic sealing, and moisture analysis. In addition to thin films, thick films, and assembly processes, important chapters on substrate selections, handling (including electrostatic discharge), failure analysis, and documentation are included. A comprehensive chapter of design guidelines will

  9. Technological process of a multi-purpose radwaste incineration system

    International Nuclear Information System (INIS)

    Wang Peiyi; Zhou Lianquan; Ma Mingxie; Qiu Mingcai; Yang Liguo; Li Xiaohai; Zhang Xiaobin; Lu Xiaowu; Dong Jingling; Wang Xujin; Li Chuanlian; Yang Baomin

    2002-01-01

    The author introduces the technological process of a multi-purpose radwaste incineration system. It is composed of three parts: pretreatment, incinerating and clean up of off-gas. The waste that may be treated include combustible solid waste, spent resins and oils. Technological routes of the system is pyrolysis incinerating for solid waste, spray incinerating for spent oils, combination of dry-dust removing and wet adsorption for cleaning up off-gas

  10. The Evolution Process on Information Technology Outsourcing Relationship

    Directory of Open Access Journals (Sweden)

    Duan Weihua

    2017-01-01

    Full Text Available Information technology outsourcing relationship is one of the key issues to IT outsourcing success. To explore how to manage and promote IT outsourcing relationship, it is necessary to understand its evolution process. Firstly, the types of IT outsourcing based on relationship quality and IT outsourcing project level will be analyzed; Secondly, two evolution process models of IT outsourcing relationship are proposed based on relationship quality and IT outsourcing project level, and the IT outsourcing relationship evolution process is indicated; Finally, an IT outsourcing relationship evolution process model is developed, and the development process of IT outsourcing relationship from low to high under the internal and external power is explained.

  11. Cogeneration technology alternatives study. Volume 2: Industrial process characteristics

    Science.gov (United States)

    1980-01-01

    Information and data for 26 industrial processes are presented. The following information is given for each process: (1) a description of the process including the annual energy consumption and product production and plant capacity; (2) the energy requirements of the process for each unit of production and the detailed data concerning electrical energy requirements and also hot water, steam, and direct fired thermal requirements; (3) anticipated trends affecting energy requirements with new process or production technologies; and (4) representative plant data including capacity and projected requirements through the year 2000.

  12. Applying Trusted Network Technology To Process Control Systems

    Science.gov (United States)

    Okhravi, Hamed; Nicol, David

    Interconnections between process control networks and enterprise networks expose instrumentation and control systems and the critical infrastructure components they operate to a variety of cyber attacks. Several architectural standards and security best practices have been proposed for industrial control systems. However, they are based on older architectures and do not leverage the latest hardware and software technologies. This paper describes new technologies that can be applied to the design of next generation security architectures for industrial control systems. The technologies are discussed along with their security benefits and design trade-offs.

  13. Semiconductor Laser Measurements Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Semiconductor Laser Measurements Laboratory is equipped to investigate and characterize the lasing properties of semiconductor diode lasers. Lasing features such...

  14. Novel WSi/Au T-shaped gate GaAs metal-semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers

    International Nuclear Information System (INIS)

    Takano, H.; Hosogi, K.; Kato, T.

    1995-01-01

    A fully ion-implanted self-aligned T-shaped gate Ga As metal-semiconductor field-effect transistor (MESFET) with high frequency and extremely low-noise performance has been successfully fabricated for super low-noise microwave monolithic integrated circuit (MMIC) amplifiers. A subhalf-micrometer gate structure composed of WSi/Ti/Mo/Au is employed to reduce gate resistance effectively. This multilayer gate structure is formed by newly developed dummy SiON self-alignment technology and a photoresist planarization process. At an operating frequency of 12 GHz, a minimum noise figure of 0.87 dB with an associated gain of 10.62 dB has been obtained. Based on the novel FET process, a low-noise single-stage MMIC amplifier with an excellent low-noise figure of 1.2 dB with an associated gain of 8 dB in the 14 GHz band has been realized. This is the lowest noise figure ever reported at this frequency for low-noise MMICs based on ion-implanted self-aligned gate MESFET technology. 14 refs., 9 figs

  15. Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures.

    Science.gov (United States)

    Beke, David; Károlyházy, Gyula; Czigány, Zsolt; Bortel, Gábor; Kamarás, Katalin; Gali, Adam

    2017-09-06

    Production of semiconductor nanostructures with high yield and tight control of shape and size distribution is an immediate quest in diverse areas of science and technology. Electroless wet chemical etching or stain etching can produce semiconductor nanoparticles with high yield but is limited to a few materials because of the lack of understanding the physical-chemical processes behind. Here we report a no-photon exciton generation chemistry (NPEGEC) process, playing a key role in stain etching of semiconductors. We demonstrate NPEGEC on silicon carbide polymorphs as model materials. Specifically, size control of cubic silicon carbide nanoparticles of diameter below ten nanometers was achieved by engineering hexagonal inclusions in microcrystalline cubic silicon carbide. Our finding provides a recipe to engineer patterned semiconductor nanostructures for a broad class of materials.

  16. Automatic process control in anaerobic digestion technology: A critical review.

    Science.gov (United States)

    Nguyen, Duc; Gadhamshetty, Venkataramana; Nitayavardhana, Saoharit; Khanal, Samir Kumar

    2015-10-01

    Anaerobic digestion (AD) is a mature technology that relies upon a synergistic effort of a diverse group of microbial communities for metabolizing diverse organic substrates. However, AD is highly sensitive to process disturbances, and thus it is advantageous to use online monitoring and process control techniques to efficiently operate AD process. A range of electrochemical, chromatographic and spectroscopic devices can be deployed for on-line monitoring and control of the AD process. While complexity of the control strategy ranges from a feedback control to advanced control systems, there are some debates on implementation of advanced instrumentations or advanced control strategies. Centralized AD plants could be the answer for the applications of progressive automatic control field. This article provides a critical overview of the available automatic control technologies that can be implemented in AD processes at different scales. Copyright © 2015 Elsevier Ltd. All rights reserved.

  17. Supercritical fluid technologies for ceramic-processing applications

    International Nuclear Information System (INIS)

    Matson, D.W.; Smith, R.D.

    1989-01-01

    This paper reports on the applications of supercritical fluid technologies for ceramic processing. The physical and chemical properties of these densified gases are summarized and related to their use as solvents and processing media. Several areas are identified in which specific ceramic processes benefit from the unique properties of supercritical fluids. The rapid expansion of supercritical fluid solutions provides a technique for producing fine uniform powders and thin films of widely varying materials. Supercritical drying technologies allow the formation of highly porous aerogel products with potentially wide application. Hydrothermal processes leading to the formation of large single crystals and microcrystalline powders can also be extended into the supercritical regime of water. Additional applications and potential applications are identified in the areas of extraction of binders and other additives from ceramic compacts, densification of porous ceramics, the formation of powders in supercritical micro-emulsions, and in preceramic polymer processing

  18. Virtual Reality in Presentation of the Underground Mine Technological Process

    Directory of Open Access Journals (Sweden)

    Kodym Oldøich

    2003-09-01

    Full Text Available Virtual Reality in Presentation of the Underground Mine Technological Process focuses on methods of presentation of an underground mine technologies in intranet technology. It shows usage of platform independent VRML client for presentation of static and dynamic information about technological process. Bi-directional interactions between client and process information database are solved.Based on analysis of technological process of underground mine a database structure was designed. It is skeleton for storing all information about any underground mine. This skeleton can be modified in any direction. Data in this "static model" of underground mine can be applied for visualization in VRML environment. In this way it is possible to simplify and unify a user's front-end for all kinds of tasks.All designed scenes can be interactively displayed in full view or in any detail view, so that a user is able to recognize every important part of installed equipment, its stage, technical parameters and other information. If manufacturers of mining equipment will supply VRML model of their real products everybody would be able to place it into VRML scene and learn everything about it.This work explores and tries to enlighten some of the areas and available approaches compliant with VRML 97 specification of modifying static scene by its browser. Concepts of animation pipeline, inside and outside scripting in scene displayed and authoring of VRML targeted geometry are discussed including database connectivity.

  19. Legitimation problems of participatory processes in technology assessment and technology policy.

    Science.gov (United States)

    Saretzki, Thomas

    2012-11-01

    Since James Carroll (1971) made a strong case for "participatory technology", scientists, engineers, policy-makers and the public at large have seen quite a number of different approaches to design and implement participatory processes in technology assessment and technology policy. As these participatory experiments and practices spread over the last two decades, one could easily get the impression that participation turned from a theoretical normative claim to a working practice that goes without saying. Looking beyond the well-known forerunners and considering the ambivalent experiences that have been made under different conditions in various places, however, the "if" and "how" of participation are still contested issues when questions of technology are on the agenda. Legitimation problems indicate that attempts to justify participation in a given case have not been entirely successful in the eyes of relevant groups among the sponsors, participants, organizers or observers. Legitimation problems of participatory processes in technology assessment and technology policy vary considerably, and they do so not only with the two domains and the ways of their interrelation or the specific features of the participatory processes. If we ask whether or not participation is seen as problematic in technology assessment and technology policy-making and in what sense it is being evaluated as problematic, then we find that the answer depends also on the approaches and criteria that have been used to legitimize or delegitimize the call for a specific design of participation.

  20. Natural language processing in psychiatry. Artificial intelligence technology and psychopathology.

    Science.gov (United States)

    Garfield, D A; Rapp, C; Evens, M

    1992-04-01

    The potential benefit of artificial intelligence (AI) technology as a tool of psychiatry has not been well defined. In this essay, the technology of natural language processing and its position with regard to the two main schools of AI is clearly outlined. Past experiments utilizing AI techniques in understanding psychopathology are reviewed. Natural language processing can automate the analysis of transcripts and can be used in modeling theories of language comprehension. In these ways, it can serve as a tool in testing psychological theories of psychopathology and can be used as an effective tool in empirical research on verbal behavior in psychopathology.

  1. Methodology and Results of Mathematical Modelling of Complex Technological Processes

    Science.gov (United States)

    Mokrova, Nataliya V.

    2018-03-01

    The methodology of system analysis allows us to draw a mathematical model of the complex technological process. The mathematical description of the plasma-chemical process was proposed. The importance the quenching rate and initial temperature decrease time was confirmed for producing the maximum amount of the target product. The results of numerical integration of the system of differential equations can be used to describe reagent concentrations, plasma jet rate and temperature in order to achieve optimal mode of hardening. Such models are applicable both for solving control problems and predicting future states of sophisticated technological systems.

  2. New media technologies and mass media reform processes

    Directory of Open Access Journals (Sweden)

    Tomić Boban

    2017-01-01

    Full Text Available This paper reviews and assesses the chances for survival and development of the media in Serbia and ib the region, from the perspective of new information and communication technologies (ICT applied in media business. In the paper theoretical method is used and harmonized with the needs of describing the problems and the observed processes and phenomena, as well as empirical method which is used for collecting and interpreting concrete facts and data on the observed processes and phenomena. The starting point lies in the fact that modern media is definitely, more and more, dependent on new technologies. A part of the new technologies is used in the process of collecting, selecting and editing media content, while the other part of the technology is used in the process of dissemination and propulsion of media content to the mass audience, and also in the feedback function as well. The technology revolution, which we describe, started with mp3, jpg and avi files, and continues with internet broadcasting, social networks, cloud technologies and new digital platforms which are used by today's media for distribution of media content. The particularity of the media in the region lies in the fact that they operating in the societes with delay of political and economic transition, so all the productive resources of society, due to this backlog, are slower adapted to the new conditions of business in the digital era. The consequences that have arisen from such dynamics of development make many media in Serbia and the region quite dysfunctional, especially those who were exposed during this transition to long-standing legal, economic and program crises. That is why most of the existing media in Serbia, especially small ones, are unprepared for modernization and they are not ready for re-modeling in accordance with the new technological circumstances.

  3. Some novel concepts in radiation processing technology applications

    International Nuclear Information System (INIS)

    Varshney, Lalit

    2014-01-01

    Search for better materials and processes has been a part of the evolution of mankind and it still continues to be so as it is being realized that earth's resources are not everlasting and effect of rapid growth on environment may adversely affect the future development. Sustainable development is the only choice for today for long term survival. Better quality and high functional materials, made by superior technologies are being demanded by the society. Radiation processing technology has significantly contributed to meet the expectation of the people in providing superior products and processes while preserving the environment. Processes are being developed where resources are fully utilized with maximum advantages and little disturbance to the environment. More than 1500 electron beam accelerators and about 500 Gamma Irradiators are presently in use and many are being deployed for radiation processing of medical supplies, pharmaceuticals and herbal materials, treat effluents and preserve food and agricultural products and several industrial products. DAE has an ambitious plan to deploy radiation technology for societal benefits in India. In the presentations some interesting applications of Radiation Processing Technology will be discussed which includes (1) Radiation Processing of Cashew Apple fruit for bio-ethanol production (2) High Energy Battery separators (3) Plant Growth Promoters and (4) Tunable biodegradability. The discussion would reveal how a waste product like cashew apple can be converted to useful materials and advanced materials like HEB separators and Tunable Biodegradable films can be made using radiation technology. Use of radiation de-polymerized polysaccharides in some experiments have shown unexpected increase in agriculture output giving new concepts to increase the productivity. (author)

  4. Doping of organic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Luessem, B.; Riede, M.; Leo, K. [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2013-01-15

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Doping of organic semiconductors

    International Nuclear Information System (INIS)

    Luessem, B.; Riede, M.; Leo, K.

    2013-01-01

    The understanding and applications of organic semiconductors have shown remarkable progress in recent years. This material class has been developed from being a lab curiosity to the basis of first successful products as small organic LED (OLED) displays; other areas of application such as OLED lighting and organic photovoltaics are on the verge of broad commercialization. Organic semiconductors are superior to inorganic ones for low-cost and large-area optoelectronics due to their flexibility, easy deposition, and broad variety, making tailor-made materials possible. However, electrical doping of organic semiconductors, i.e. the controlled adjustment of Fermi level that has been extremely important to the success of inorganic semiconductors, is still in its infancy. This review will discuss recent work on both fundamental principles and applications of doping, focused primarily to doping of evaporated organic layers with molecular dopants. Recently, both p- and n-type molecular dopants have been developed that lead to efficient and stable doping of organic thin films. Due to doping, the conductivity of the doped layers increases several orders of magnitude and allows for quasi-Ohmic contacts between organic layers and metal electrodes. Besides reducing voltage losses, doping thus also gives design freedom in terms of transport layer thickness and electrode choice. The use of doping in applications like OLEDs and organic solar cells is highlighted in this review. Overall, controlled molecular doping can be considered as key enabling technology for many different organic device types that can lead to significant improvements in efficiencies and lifetimes. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Isotopically controlled semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Haller, Eugene E.

    2006-06-19

    The following article is an edited transcript based on the Turnbull Lecture given by Eugene E. Haller at the 2005 Materials Research Society Fall Meeting in Boston on November 29, 2005. The David Turnbull Lectureship is awarded to recognize the career of a scientist who has made outstanding contributions to understanding materials phenomena and properties through research, writing, and lecturing, as exemplified by the life work of David Turnbull. Haller was named the 2005 David Turnbull Lecturer for his 'pioneering achievements and leadership in establishing the field of isotopically engineered semiconductors; for outstanding contributions to materials growth, doping and diffusion; and for excellence in lecturing, writing, and fostering international collaborations'. The scientific interest, increased availability, and technological promise of highly enriched isotopes have led to a sharp rise in the number of experimental and theoretical studies with isotopically controlled semiconductor crystals. This article reviews results obtained with isotopically controlled semiconductor bulk and thin-film heterostructures. Isotopic composition affects several properties such as phonon energies, band structure, and lattice constant in subtle, but, for their physical understanding, significant ways. Large isotope-related effects are observed for thermal conductivity in local vibrational modes of impurities and after neutron transmutation doping. Spectacularly sharp photoluminescence lines have been observed in ultrapure, isotopically enriched silicon crystals. Isotope multilayer structures are especially well suited for simultaneous self- and dopant-diffusion studies. The absence of any chemical, mechanical, or electrical driving forces makes possible the study of an ideal random-walk problem. Isotopically controlled semiconductors may find applications in quantum computing, nanoscience, and spintronics.

  7. Novel room temperature ferromagnetic semiconductors

    Energy Technology Data Exchange (ETDEWEB)

    Gupta, Amita [KTH Royal Inst. of Technology, Stockholm (Sweden)

    2004-06-01

    Today's information world, bits of data are processed by semiconductor chips, and stored in the magnetic disk drives. But tomorrow's information technology may see magnetism (spin) and semiconductivity (charge) combined in one 'spintronic' device that exploits both charge and 'spin' to carry data (the best of two worlds). Spintronic devices such as spin valve transistors, spin light emitting diodes, non-volatile memory, logic devices, optical isolators and ultra-fast optical switches are some of the areas of interest for introducing the ferromagnetic properties at room temperature in a semiconductor to make it multifunctional. The potential advantages of such spintronic devices will be higher speed, greater efficiency, and better stability at a reduced power consumption. This Thesis contains two main topics: In-depth understanding of magnetism in Mn doped ZnO, and our search and identification of at least six new above room temperature ferromagnetic semiconductors. Both complex doped ZnO based new materials, as well as a number of nonoxides like phosphides, and sulfides suitably doped with Mn or Cu are shown to give rise to ferromagnetism above room temperature. Some of the highlights of this work are discovery of room temperature ferromagnetism in: (1) ZnO:Mn (paper in Nature Materials, Oct issue, 2003); (2) ZnO doped with Cu (containing no magnetic elements in it); (3) GaP doped with Cu (again containing no magnetic elements in it); (4) Enhancement of Magnetization by Cu co-doping in ZnO:Mn; (5) CdS doped with Mn, and a few others not reported in this thesis. We discuss in detail the first observation of ferromagnetism above room temperature in the form of powder, bulk pellets, in 2-3 mu-m thick transparent pulsed laser deposited films of the Mn (<4 at. percent) doped ZnO. High-resolution transmission electron microscopy (HRTEM) and electron energy loss spectroscopy (EELS) spectra recorded from 2 to 200nm areas showed homogeneous

  8. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  9. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  10. Fundamentals of electroheat electrical technologies for process heating

    CERN Document Server

    Lupi, Sergio

    2017-01-01

    This book provides a comprehensive overview of the main electrical technologies for process heating, which tend to be treated separately in specialized books. Individual chapters focus on heat transfer, electromagnetic fields in electro-technologies, arc furnaces, resistance furnaces, direct resistance heating, induction heating, and high-frequency and microwave heating. The authors highlight those topics of greatest relevance to a wide-ranging teaching program, and at the same time offer a detailed review of the main applications of the various technologies. The content represents a synthesis of the extensive knowledge and experience that the authors have accumulated while researching and teaching at the University of Padua’s Engineering Faculty. This text on industrial electroheating technologies is a valuable resource not only for students of industrial, electrical, chemical, and material science engineering, but also for engineers, technicians and others involved in the application of electroheating and...

  11. Pretreatment Technologies of Lignocellulosic Materials in Bioethanol Production Process

    Directory of Open Access Journals (Sweden)

    Mohamad Rusdi Hidayat

    2013-06-01

    Full Text Available Bioethanol is one type of biofuel that developed significantly. The utilization of bioethanol is not only limited for fuel, but also could be used as material for various industries such as pharmaceuticals, cosmetics, and food. With wide utilization and relatively simple production technology has made bioethanol as the most favored biofuel currently. The use of lignocellulosic biomass, microalgae, seaweeds, even GMO (Genetically modified organisms as substrates for bioethanol production has been widely tested. Differences in the materials eventually led to change in the production technology used. Pretreatment technology in the bioethanol production using lignocellulosic currently experiencing rapid development. It is a key process and crucial for the whole next steps. Based on the advantages and disadvantages from all methods, steam explotion and liquid hot water methods are the most promising  pretreatment technology available.

  12. A Voice Processing Technology for Rural Specific Context

    Science.gov (United States)

    He, Zhiyong; Zhang, Zhengguang; Zhao, Chunshen

    Durian the promotion and applications of rural information, different geographical dialect voice interaction is a very complex issue. Through in-depth analysis of TTS core technologies, this paper presents the methods of intelligent segmentation, word segmentation algorithm and intelligent voice thesaurus construction in the different dialects context. And then COM based development methodology for specific context voice processing system implementation and programming method. The method has a certain reference value for the rural dialect and voice processing applications.

  13. The Evolution Process on Information Technology Outsourcing Relationship

    OpenAIRE

    Duan Weihua

    2017-01-01

    Information technology outsourcing relationship is one of the key issues to IT outsourcing success. To explore how to manage and promote IT outsourcing relationship, it is necessary to understand its evolution process. Firstly, the types of IT outsourcing based on relationship quality and IT outsourcing project level will be analyzed; Secondly, two evolution process models of IT outsourcing relationship are proposed based on relationship quality and IT outsourcing project level, and the IT ou...

  14. Status of electron beam processing technology in Malaysia

    International Nuclear Information System (INIS)

    Ghazali, Zulkafli; Dahlan, Khairul Zaman; Aiasah, S.H.; Khomsaton, A.B.; Ting, T.M.

    2003-01-01

    The electron beam processing in Malaysia starting in 1991 at MINT (Malaysian Institute for Nuclear Technology Research) has been focussed on medical product sterilization, curing of surface coating and polymer modifications. Subsequent installation of accelerators by private companies promoted the development of radiation processing technologies for the use of production of heat-shrinkable products, pilot-scale flue gas purification, as well as wires, cables, tubes and hydrogels. Decomposition of a wide range of volatile organic compounds from industrial exhausts (car painting lines, volatile dioxin and furan from municipal waste incinerators) and purification of liquid wastewater and drinking water are also being under R and D work. Malaysia will continue to play an active part in the program on radiation technology to strengthen environmentally sustainable development in line with FNCA objectives. (S. Ohno)

  15. Sustaining high energy efficiency in existing processes with advanced process integration technology

    International Nuclear Information System (INIS)

    Zhang, Nan; Smith, Robin; Bulatov, Igor; Klemeš, Jiří Jaromír

    2013-01-01

    Highlights: ► Process integration with better modelling and more advanced solution methods. ► Operational changes for better environmental performance through optimisation. ► Identification of process integration technology for operational optimisation. ► Systematic implementation procedure of process integration technology. ► A case study with crude oil distillation to demonstrate the operational flexibility. -- Abstract: To reduce emissions in the process industry, much emphasis has been put on making step changes in emission reduction, by developing new process technology and making renewable energy more affordable. However, the energy saving potential of existing systems cannot be simply ignored. In recent years, there have been significant advances in process integration technology with better modelling techniques and more advanced solution methods. These methods have been applied to the new design and retrofit studies in the process industry. Here attempts are made to apply these technologies to improve the environmental performance of existing facilities with operational changes. An industrial project was carried out to demonstrate the importance and effectiveness of exploiting the operational flexibility for energy conservation. By applying advanced optimisation technique to integrate the operation of distillation and heat recovery in a crude oil distillation unit, the energy consumption was reduced by 8% without capital expenditure. It shows that with correctly identified technology and the proper execution procedure, significant energy savings and emission reduction can be achieved very quickly without major capital expenditure. This allows the industry to improve its economic and environment performance at the same time.

  16. Ethanol production by extractive fermentation - Process development and technology transfer

    International Nuclear Information System (INIS)

    Daugulis, A.J.; Axford, D.B.; Mau, T.K.

    1991-01-01

    Extractive Fermentation is an ethanol processing strategy in which the operations of fermentation and product recovery are integrated and undertaken simultaneously in a single step. In this process an inert and biocompatible organic solvent is introduced directly into the fermentation vessel to selectively extract the ethanol product. The ethanol is readily recovered from the solvent at high concentration by means of flash vaporization, and the solvent is recycled in a closed loop back to the fermentor. This process is characterized by a high productivity (since ethanol does not build up to inhibitory levels), continuous operation, significantly reduced water consumption, and lower product recovery costs. The technical advantages of this processing strategy have been extensively demonstrated by means of a continuous, fully integrated and computer-controlled Process Demonstration Unit in the authors' laboratory. Numerous features of this technology have been protected by US patent. A thorough economic comparison of Extractive Fermentation relative to modern ethanol technology (continuous with cell recycle) has been completed for both new plants and retrofitting of existing facilities for a capacity of 100 million liters of ethanol per year. Substantial cost savings are possible with Extractive Fermentation ranging, depending on the process configuration, from 5 cents to 16 cents per liter. Activities are under way to transfer this proprietary technology to the private sector

  17. Use of indigenous technology in processing and utilization of non ...

    African Journals Online (AJOL)

    Information used for this paper came from both primary and secondary sources. Ten (10) respondents were interviewed from each secondary source of information. The use of indigenous technology to process these forest products to forest foods is currently limited by use of crude methods, inability to expand production ...

  18. Framework, process and tool for managing technology-based assets

    CSIR Research Space (South Africa)

    Kfir, R

    2000-10-01

    Full Text Available ) and the intellectual property (IP) of the organisation, The study describes a framework linking the core processes supporting the management of technology-based assets and offerings with other organisational elements such as leadership, strategy, and culture. Specific...

  19. Adoption of improved technologies in soyabean processing and ...

    African Journals Online (AJOL)

    adequate information and limited understanding. To increase protein food intake, adoption of soyabean improved technologies should be encouraged. Efforts should be made by extension workers to create more awareness on the importance of these innovations and on methods of processing. This way, consumption of ...

  20. The Effect and Importance of Technology in the Research Process

    Science.gov (United States)

    Cuff, Ed

    2014-01-01

    From elementary schooling to doctoral-level education, technology has become an integral part of the learning process in and out of the classroom. With the implementation of the Common Core Learning Standards, the skills required for research are more valuable than ever, for they are required to succeed in a college setting, as well as in the…