WorldWideScience

Sample records for technique thin films

  1. Thin Film Deposition Techniques (PVD)

    Science.gov (United States)

    Steinbeiss, E.

    The most interesting materials for spin electronic devices are thin films of magnetic transition metals and magnetic perovskites, mainly the doped La-manganites [1] as well as several oxides and metals for passivating and contacting the magnetic films. The most suitable methods for the preparation of such films are the physical vapor deposition methods (PVD). Therefore this report will be restricted to these deposition methods.

  2. High Precision Metal Thin Film Liftoff Technique

    Science.gov (United States)

    Brown, Ari D. (Inventor); Patel, Amil A. (Inventor)

    2015-01-01

    A metal film liftoff process includes applying a polymer layer onto a silicon substrate, applying a germanium layer over the polymer layer to create a bilayer lift off mask, applying a patterned photoresist layer over the germanium layer, removing an exposed portion of the germanium layer, removing the photoresist layer and a portion of the polymer layer to expose a portion of the substrate and create an overhanging structure of the germanium layer, depositing a metal film over the exposed portion of the substrate and the germanium layer, and removing the polymer and germanium layers along with the overlaying metal film.

  3. Advanced characterization techniques for thin film solar cells

    CERN Document Server

    Rau, Uwe; Kirchartz, Thomas

    2011-01-01

    Written by scientists from leading institutes in Germany, USA and Spain who use these techniques as the core of their scientific work and who have a precise idea of what is relevant for photovoltaic devices, this text contains concise and comprehensive lecture-like chapters on specific research methods.They focus on emerging, specialized techniques that are new to the field of photovoltaics yet have a proven relevance. However, since new methods need to be judged according to their implications for photovoltaic devices, a clear introductory chapter describes the basic physics of thin-film

  4. Analytical techniques for thin films treatise on materials science and technology

    CERN Document Server

    Tu, K N

    1988-01-01

    Treatise on Materials Science and Technology, Volume 27: Analytical Techniques for Thin Films covers a set of analytical techniques developed for thin films and interfaces, all based on scattering and excitation phenomena and theories. The book discusses photon beam and X-ray techniques; electron beam techniques; and ion beam techniques. Materials scientists, materials engineers, chemical engineers, and physicists will find the book invaluable.

  5. Vaporization Studies from Slag Surfaces Using a Thin Film Technique

    Science.gov (United States)

    Seetharaman, Seshadri; Shyrokykh, Tetiana; Schröder, Christina; Scheller, Piotr R.

    2013-08-01

    The investigations of vanadium vaporization from CaO-SiO2-FeO-V2O5 thin film slags were conducted using the single hot thermocouple technique (SHTT) with air as the oxidizing atmosphere. The slag samples were analyzed after the experiments by SEM/EDX. The vanadium content was found to decrease as a function of time. The loss of vanadium from the slag film after 30 minutes of oxidation was approximately 18 pct and after 50 minutes, it was nearly 56 pct. The possible mechanism of vanadium loss would be the surface oxidation of vanadium oxide in the slag, VO x to V5+, followed by surface evaporation of V2O5, which has a high vapor pressure at the experimental temperature.

  6. Crystalline Indium Sulphide thin film by photo accelerated deposition technique

    Science.gov (United States)

    Dhanya, A. C.; Preetha, K. C.; Deepa, K.; Remadevi, T. L.

    2015-02-01

    Indium sulfide thin films deserve special attention because of its potential application as buffer layers in CIGS based solar cells. Highly transparent indium sulfide (InS) thin films were prepared using a novel method called photo accelerated chemical deposition (PCD). Ultraviolet source of 150 W was used to irradiate the solution. Compared to all other chemical methods, PCD scores its advantage for its low cost, flexible substrate and capable of large area of deposition. Reports on deposition of high quality InS thin films at room temperature are very rare in literature. The precursor solution was initially heated to 90°C for ten minutes and then deposition was carried out at room temperature for two hours. The appearance of the film changed from lemon yellow to bright yellow as the deposition time increased. The sample was characterized for its structural and optical properties. XRD profile showed the polycrystalline behavior of the film with mixed phases having crystallite size of 17 nm. The surface morphology of the films exhibited uniformly distributed honey comb like structures. The film appeared to be smooth and the value of extinction coefficient was negligible. Optical measurements showed that the film has more than 80% transmission in the visible region. The direct band gap energy was 2.47eV. This method is highly suitable for the synthesis of crystalline and transparent indium sulfide thin films and can be used for various photo voltaic applications.

  7. SnS thin films deposited by chemical bath deposition, dip coating and SILAR techniques

    Science.gov (United States)

    Chaki, Sunil H.; Chaudhary, Mahesh D.; Deshpande, M. P.

    2016-05-01

    The SnS thin films were synthesized by chemical bath deposition (CBD), dip coating and successive ionic layer adsorption and reaction (SILAR) techniques. In them, the CBD thin films were deposited at two temperatures: ambient and 70 °C. The energy dispersive analysis of X-rays (EDAX), X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and optical spectroscopy techniques were used to characterize the thin films. The electrical transport properties studies on the as-deposited thin films were done by measuring the I-V characteristics, DC electrical resistivity variation with temperature and the room temperature Hall effect. The obtained results are deliberated in this paper.

  8. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Energy Technology Data Exchange (ETDEWEB)

    Paliwal, Ayushi [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India); Sharma, Savita [Department of Applied Physics, Delhi Technological University, Delhi (India); Tomar, Monika [Physics Department, Miranda House, University of Delhi, Delhi 110007 (India); Singh, Fouran [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110075 (India); Gupta, Vinay, E-mail: drguptavinay@gmail.com [Department of Physics and Astrophysics, University of Delhi, Delhi 110007 (India)

    2016-07-15

    Highlights: • Investigated the optical properties of BiFeO{sub 3} (BFO) thin films after irradiation using SPR. • Otto configuration has been used to excite the surface plasmons using gold metal thin film. • BFO thin films were prepared by sol–gel spin coating technique. • Examined the refractive index dispersion of pristine and irradiated BFO thin film. - Abstract: Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO{sub 3} (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol–gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au{sup 9+} ions at a fluence of 1 × 10{sup 12} ions cm{sup −2}. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  9. New thin film techniques for SC cavities and photo cathodes

    CERN Document Server

    Antoine, C Z

    2013-01-01

    The EuCARD monograph 12, ¨Materials and surface aspects in the development of SRF niobium cavities¨ is a comprehensive review on the state of the art materials and material preparation for SRF cavities, and includes a chapter on state of the art film technology, paving the ground for future research and development. This chapter focuses on innovative multi-layered films to overcome materials limitation at high field, and on innovative coating technologies for traditional materials, and is the basis for the future Thin Film Task in Eucard-2.

  10. Chemosynthesis of PbS thin film by SILAR technique

    Science.gov (United States)

    Pawar, Sarita B.; Pawar, S. A.; Patil, P. S.; Bhosale, P. N.

    2013-06-01

    Thin film of lead sulphide (PbS) having uniform circular grains was chemically synthesized at room temperature from an aqueous alkaline bath onto soda lime glass substrate. The synthesized film of PbS was characterized using X-ray diffraction, UV-vis spectroscopy, scanning electron microscopy, energy dispersive x-ray spectroscopy and Transmission electron microscopy. The XRD pattern revealed the formation of PbS with a cubic crystal structure. SEM micrographs show that the granular morphology. EDS pattern shows presence of Pb and S with 1:1 stoichiometry. From TEM analysis grain size of PbS nanoparticles was found to be 40 nm and SAED pattern shows that polycrystalline nature of PbS thin film.

  11. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    OpenAIRE

    Lorusso, Antonella; Gontad, F.; Broitman, Esteban; Chiadroni, E.; Perrone, Walter

    2015-01-01

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher ...

  12. Radar absorbing materials based on titanium thin film obtained by sputtering technique

    Directory of Open Access Journals (Sweden)

    Viviane Lilian Soethe

    2011-09-01

    Full Text Available Titanium thin films with nanometer thicknesses were deposited on polyethylene terephthalate (PET substrate using the triode magnetron sputtering technique. It was observed that the titanium thin film-polymeric substrate set attenuates the energy of the incident electromagnetic wave in the frequency range of 8 to 12 GHz. This result allows to consider this set as a radar absorbing material, which may be employed in automobile, telecommunication, aerospace, medical, and electroelectronic areas. Results of the reflectivity show that the attenuation depends on the thin film thickness, as a determining factor. Thin films with 25 to 100 nm thickness values show attenuation of the electromagnetic wave energy from around 20 to 50%. Analyses by Rutherford backscattering spectrometry provided information about the thickness of the thin films studied. Hall effect analyses contributed to better understand the influence of the thin film thickness on the electron mobility and consequently on absorption properties.

  13. Characterization of copper selenide thin films deposited by chemical bath deposition technique

    Science.gov (United States)

    Al-Mamun; Islam, A. B. M. O.

    2004-11-01

    A low-cost chemical bath deposition (CBD) technique has been used for the preparation of Cu2-xSe thin films onto glass substrates and deposited films were characterized by X-ray diffractometry (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and UV-vis spectrophotometry. Good quality thin films of smooth surface of copper selenide thin films were deposited using sodium selenosulfate as a source of selenide ions. The structural and optical behaviour of the films are discussed in the light of the observed data.

  14. Ferroelectric thin films for imaging and signaling techniques

    Science.gov (United States)

    Dorn, R.; Gutu-Nelle, A.; Schichl, H.; Springer, J.; Volz, H.

    1983-03-01

    Improvement of lanthanum doped lead zirconate/lead titanate ceramics (PLZT) switching voltage and permittivity properties is described. Niobates with tungsten bronze structure and PLZT thin films were prepared and tested. Using lanthanum doped barium niobate titanate materials, ceramic plates with a transparency of 50% were prepared by a two step sintering process. Permittivity (E) is 600 at 10 kHz, contrast ratio is 1:250 at a switching voltage of 450 V. Due to the lower E value compared to PLZT, this material has lower switching time. By RF-sputtering, PLZT thin films (thickness = 4 to 8 microns) with controlled chemical composition, perovskite structure, and a grain size of 1.5 micron diameter were prepared. Saturation polarization of 60 micro C/sqcm is three times higher than that of bulk material PLZT 8.5/68/32. Permittivity is 650. An electro-optic effect was demonstrated.

  15. Introduction to Advanced X-ray Diffraction Techniques for Polymeric Thin Films

    Directory of Open Access Journals (Sweden)

    Nicodemus Edwin Widjonarko

    2016-11-01

    Full Text Available X-ray diffraction has been a standard technique for investigating structural properties of materials. However, most common applications in the organic materials community have been restricted to either chemical identification or qualitative strain analysis. Moreover, its use for polymeric thin films has been challenging because of the low structure factor of carbon and the thin film nature of the sample. Here, we provide a short review of advanced X-ray diffraction (XRD techniques suitable for polymeric thin films, including the type of analysis that can be done and measurement geometries that would compensate low signals due to low carbon structure factor and the thin film nature of the sample. We will also briefly cover the χ -pole figure for texture analysis of ultra-thin film that has recently become commonly used. A brief review of XRD theory is also presented.

  16. Characterisation of Pb thin films prepared by the nanosecond pulsed laser deposition technique for photocathode application

    Energy Technology Data Exchange (ETDEWEB)

    Lorusso, A., E-mail: antonella.lorusso@le.infn.it [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Gontad, F. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden); Chiadroni, E. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, Frascati 00044 (Italy); Perrone, A. [Dipartimento di Matematica e Fisica “E. De Giorgi” and Istituto Nazionale di Fisica Nucleare, Università del Salento, Lecce 73100 (Italy)

    2015-03-31

    Pb thin films were prepared by the nanosecond pulsed laser deposition technique on Si (100) and polycrystalline Nb substrates for photocathode application. As the photoemission performances of a cathode are strongly affected by its surface characteristics, the Pb films were grown at different substrate temperatures with the aim of modifying the morphology and structure of thin films. An evident morphological modification in the deposited films with the formation of spherical grains at higher temperatures has been observed. X-ray diffraction measurements showed that a preferred orientation of Pb (111) normal to the substrate was achieved at 30 °C while the Pb (200) plane became strongly pronounced with the increase in the substrate temperature. Finally, a Pb thin film deposited on Nb substrate at 30 °C and tested as the photocathode showed interesting results for the application of such a device in superconducting radio frequency guns. - Highlights: • Pb thin films obtained by the nanosecond pulsed laser deposition technique at different substrate temperature. • The substrate temperature modifies the morphology and structure of Pb films. • Pb thin film was deposited at room temperature for photocathode application. • The Pb thin film photocathode was tested and the quantum efficiency of the device improved after laser cleaning treatment of the film surface.

  17. Ferroelectric-Like Properties of Amorphous Metal Oxide Thin Films Prepared by Sol-Gel Technique.

    Science.gov (United States)

    Xu, Yuhuan

    1995-01-01

    Advances in the field of both optical and electrical integrated circuit devices require new thin film materials. Ferroelectric materials have attractive properties such as hysteresis behavior, pyroelectricity, piezoelectricity and nonlinear optical properties. Many ferroelectric thin films have been successfully prepared from metal organic compounds via sol-gel processing. Thus far, research has concentrated upon polycrystalline or epitaxial ferroelectric films. For amorphous ferroelectric thin films, preliminary experimental results in our laboratory indicated that these amorphous films possessed good ferroelectric -like properties. The purpose of this research is (1) to fabricate amorphous metal oxide thin films by the sol-gel technique, (2) to determine whether these amorphous metal oxide thin films have ferroelectric-like properties and (3) to propose a theoretical model ("ferrons model") to explain the ferroelectric-like properties of amorphous thin films, which deals with a structure of permanent dipoles of "partially ordered clusters" (ferrons) in the amorphous films. The theoretical model is based on our experimental results of thin films of two amorphous materials (barium titanite and lead zirconate titanate). This research may provide a new functional material which could be useful for producing integrated electronic and electrooptic devices.

  18. p-Type Transparent NiO Thin Films By e-Beam Evaporation Techniques

    Directory of Open Access Journals (Sweden)

    K.J. Patel1,

    2011-01-01

    Full Text Available Nickel oxide (NiO semiconductors thin films were prepared by e-beam evaporation technique at different substrate temperatures ranging from room temperature to 400 °C on glass substrate. Glancing incident X-ray diffraction depict that with the increases in substrate temperature the preferred orientation changes from (111 to (200 direction. Atomic force microscopy was used to investigate the surface morphology of the NiO thin films. The transmittance of NiO thin film increases with substrate temperature. NiO thin film was also deposited on n-type indium tin oxide (ITO thin films to investigate the diode characteristic of p-NiO/n-ITO junction.

  19. Magnetic and optical properties of the nickel thin film deposited by GLAD technique

    Directory of Open Access Journals (Sweden)

    Potočnik Jelena M.

    2014-01-01

    Full Text Available In this work, nickel thin film was deposited on glass sample using Glancing Angle Deposition (GLAD technique, to a thickness of 1 μm. Glass sample was positioned 15 degrees with respect to the nickel vapor flux. The nickel thin film was characterized by Atomic Force Microscopy (AFM, Magneto- Optical Kerr effect Microscopy and Spectroscopic Ellipsometry. According to an AFM cross-section imaging, it was found that the nickel thin film has a columnar structure. The values of the coercively, obtained from the magnetic hysteresis loops, were analyzed as a function of the sample rotation in the magnetic field. It was found that the direction of magnetization easy axis lies toward the structure growth. Optical properties of the nickel thin film were studied at the wavelength of 455 nm. From the shape of the refractive index and the extinction coefficient diagrams could be concluded that the nickel thin film has an optical anisotropy.

  20. Thin film processes II

    CERN Document Server

    Kern, Werner

    1991-01-01

    This sequel to the 1978 classic, Thin Film Processes, gives a clear, practical exposition of important thin film deposition and etching processes that have not yet been adequately reviewed. It discusses selected processes in tutorial overviews with implementation guide lines and an introduction to the literature. Though edited to stand alone, when taken together, Thin Film Processes II and its predecessor present a thorough grounding in modern thin film techniques.Key Features* Provides an all-new sequel to the 1978 classic, Thin Film Processes* Introduces new topics, and sever

  1. Magnetic and electric properties of C-Co thin films prepared by vaccum arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Tembre, A.; Clin, M.; Picot, J.-C. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Dellis, J.-L., E-mail: jean-luc.dellis@u-picardie.fr [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Henocque, J. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France); Bouzerar, R. [Laboratoire de Physique des Systemes Complexes, Universite de Picardie Jules Verne, 33 rue Saint leu, 80039 Amiens (France); Djellab, K. [Plate-forme de Microscopie Electronique, Universite de Picardie Jules Verne, 33 rue Saint Leu, 80039 Amiens (France)

    2011-09-15

    Highlights: > Cobalt doped carbon thin films have been deposited by pulsed anodic electric arc technique. > The films are composed of well-crystallized cobalt layers and complex graphitic microstructure. > An insulating to a metallic state transition at 60 K is observed. > The magnetic susceptibility measurements show anomalous behaviour around 60 K. - Abstract: Cobalt doped carbon thin films have been deposited by a pulsed anodic electric arc technique. The films were characterized by high resolution transmission electron microscopy, electric measurements under dc magnetic fields, and ac magnetic susceptibility measurements within a temperature range 15-300 K. An insulating to a metallic state transition at a critical temperature around 60 K was observed.

  2. PZT thin film deposition techniques, properties and its application in ultrasonic MEMS sensors: a review

    Science.gov (United States)

    Shilpa, G. D.; Sreelakshmi, K.; Ananthaprasad, M. G.

    2016-09-01

    This paper describes an overview of the state of art in PbZrxTi1-xO3 (PZT)ferroelectric thin films and its applications in Micro Electro Mechanical Systems (MEMS). First, the deposition techniques and then the important properties of PZT films such as surface morphology polarization and ferroelectric properties are reviewed. Two major deposition techniques such as sol-gel and Magnetron sputtering are given and compared for the film surface morphology and ferroelectric properties. Finally, the application of PZT thin film in MEMS ultrasonic sensors is discussed.

  3. Glow discharge optical emission spectroscopy: a complementary technique to analyze thin electrodeposited polyaniline films

    Energy Technology Data Exchange (ETDEWEB)

    Moutarlier, V. [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France); Lakard, S., E-mail: sophie.lakard@univ-fcomte.fr [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France); Patois, T. [Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain, Croix du Sud, 1/4, 1348 Louvain-la-Neuve (Belgium); Lakard, B. [Institut UTINAM, CNRS-UMR 6213, Université de Franche-Comté, 16 route de Gray, 25030 Besançon (France)

    2014-01-01

    Glow Discharge Optical Emission Spectroscopy (GDOES) has been developed to perform depth profiles of thick metallic films, in tens of microns range. GDOES spectroscopy can also be used to analyze thin organic polymer films since this technique has a great potential thanks to its high depth resolution, multi-element capability, sensitivity, and adaptability to solids or films and to conducting or non-conducting samples. In particular thin electrodeposited conducting polymer films remain an unexplored field of investigation for GDOES technique. However GDOES was used in this work to analyze electrodeposited polyaniline films, in addition to other techniques such as profilometry, electron microscopy and X-ray diffraction (XRD). More precisely polyaniline thin films were electrodeposited from HCl solutions and the presence of an anilinium chloride excess at the top surface of the polymer film was demonstrated using GDOES and XRD. Rinsing of these films with water led to the removal of this excess and to the partial dedoping of the polymer film due to the porous structure of polymer films. Polyaniline thin films were also electrodeposited from H{sub 2}SO{sub 4} solutions and an anilinium hydrogen sulfate was similarly observed at the top surface of the polymer. This excess was removed by rinsing, contrary to hydrogen sulfate anions incorporated into the polymer film during the electrochemical polymerization that were not completely expulsed from the polyaniline films as proved using GDOES. - Highlights: • Polyaniline films were electrodeposited from HCl and H{sub 2}SO{sub 4} solutions • Polymer films were analyzed by Glow Discharge Optical Emission Spectroscopy (GDOES) • The incorporation of anions in the films was proved using GDOES depth profiles • The crystalline structure of polyaniline films was modified by water rinsing.

  4. Optical characteristics of transparent samarium oxide thin films deposited by the radio-frequency sputtering technique

    Indian Academy of Sciences (India)

    A A ATTA; M M EL-NAHASS; KHALED M ELSABAWY; M M ABD EL-RAHEEM; A M HASSANIEN; A ALHUTHALI; ALI BADAWI; AMAR MERAZGA

    2016-11-01

    Transparent metal oxide thin films of samarium oxide (Sm$_2$O$_3$) were prepared on pre-cleaned fused optically flat quartz substrates by radio-frequency (RF) sputtering technique. The as-deposited thin films were annealed at different temperatures (873, 973 and 1073 K) for 4 h in air under normal atmospheric pressure. The topological morphology of the film surface was characterized by using atomic force microscopy (AFM). The optical properties of the as-prepared and annealed thin films were studied using their reflectance and transmittance spectra at nearly normal incident light. The estimated direct optical band gap energy (E$^{d}_{g}$ ) values were found to increase by increasing the annealing temperatures. The dispersion curves of the refractive index of Sm$_2$O$_3$ thin films were found to obey the single oscillator model.

  5. Growth of ultra thin PbS films by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Puiso, J.; Lindroos, S.; Tamulevicius, S.; Leskelae, M.; Snitka, V

    2003-03-20

    The successive ionic layer adsorption and reaction (SILAR) technique involves growth of thin films from solution, ionic layer by ionic layer at room temperature and normal pressure. The aim of this work is to characterize SILAR grown PbS thin films (15-100 nm) on silicon substrates using different lead-precursor solutions. The X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy investigations have been performed to compare the properties of the films grown with different lead precursor solutions. The PbS ultra thin films were polycrystalline and cubic. The films were stoichiometric and contained some oxygen. The film roughness and crystallite size could be controlled by choosing the lead precursors.

  6. Novel thin film polymer foaming technique for low and ultra low-k dielectrics

    NARCIS (Netherlands)

    Krause, B.; Koops, G.H.; Vegt, van der N.F.A.; Wessling, M.; Wubbenhorst, M.; Turnhout, van J.

    2001-01-01

    The results presented show a novel route for the preparation of thin ultra-low-k polymer films based on commercial and "non-exotic" (non-expensive) polyimide by a foaming technique. Dependent on the glass transition temperature of the polyimide mechanically and thermally stable (> 300 °C) films havi

  7. Development of plasma assisted thermal vapor deposition technique for high-quality thin film

    Science.gov (United States)

    Lee, Kang-Il; Choi, Yong Sup; Park, Hyun Jae

    2016-12-01

    The novel technique of Plasma-Assisted Vapor Deposition (PAVD) is developed as a new deposition method for thin metal films. The PAVD technique yields a high-quality thin film without any heating of the substrate because evaporated particles acquire energy from plasma that is confined to the inside of the evaporation source. Experiments of silver thin film deposition have been carried out in conditions of pressure lower than 10-3 Pa. Pure silver plasma generation is verified by the measurement of the Ag-I peak using optical emission spectroscopy. A four point probe and a UV-VIS spectrophotometer are used to measure the electrical and optical properties of the silver film that is deposited by PAVD. For an ultra-thin silver film with a thickness of 6.5 nm, we obtain the result of high-performance silver film properties, including a sheet resistance 75%. The PAVD-film properties show a low sheet resistance of 30% and the same transmittance with conventional thermal evaporation film. In the PAVD source, highly energetic particles and UV from plasma do not reach the substrate because the plasma is completely shielded by the optimized nozzle of the crucible. This new PAVD technique could be a realistic solution to improve the qualities of transparent electrodes for organic light emission device fabrication without causing damage to the organic layers.

  8. New experimental technique for the measurement of the velocity field in thin films falling over obstacles

    Science.gov (United States)

    Landel, Julien R.; Daglis, Ana; McEvoy, Harry; Dalziel, Stuart B.

    2014-11-01

    We present a new experimental technique to measure the surface velocity of a thin falling film. Thin falling films are important in various processes such as cooling in heat exchangers or cleaning processes. For instance, in a household dishwasher cleaning depends on the ability of a thin draining film to remove material from a substrate. We are interested in the impact of obstacles attached to a substrate on the velocity field of a thin film flowing over them. Measuring the velocity field of thin falling films is a challenging experimental problem due to the small depth of the flow and the large velocity gradient across its depth. We propose a new technique based on PIV to measure the plane components of the velocity at the surface of the film over an arbitrarily large area and an arbitrarily large resolution, depending mostly on the image acquisition technique. We perform experiments with thin films of water flowing on a flat inclined surface, made of glass or stainless steel. The typical Reynolds number of the film is of the order of 100 to 1000, computed using the surface velocity, the film thickness and the kinematic viscosity of the film. We measure the modification to the flow field, from a viscous-gravity regime, caused by small solid obstacles, such as three-dimensional hemispherical obstacles and two-dimensional steps. We compare our results with past theoretical and numerical studies. This material is based upon work supported by the Defense Threat Reduction Agency under Contract No. HDTRA1-12-D-0003-0001.

  9. Rectifying properties of ZnO thin films deposited on FTO by electrodeposition technique

    Science.gov (United States)

    Lv, Jianguo; Sun, Yue; Zhao, Min; Cao, Li; Xu, Jiayuan; He, Gang; Zhang, Miao; Sun, Zhaoqi

    2016-03-01

    ZnO thin films were successfully grown on fluorine-doped tin oxide glass by electrodeposition technique. The crystal structure, surface morphology and optical properties of the thin films were investigated. The average crystallite size and intensity of A1(LO) mode increase with improving the absolute value of deposition potential. The best preferential orientation along c-axis and the richest oxygen interstitial defects have been observed in the sample deposited at -0.8 V. A heterojunction device consisting of ZnO thin film and n-type fluorine-doped tin oxide was fabricated. The current-voltage (I-V) characteristic of the p-n heterojunction device deposited at -0.8 V shows the best rectifying diode behavior. The p-type conductivity of the ZnO thin film could be attributed to complex defect of unintentional impurity and interstitial oxygen.

  10. Achieving Thin Films with Micro/Nano-Scale Controllable Morphology by Glancing Angle Deposition Technique

    Institute of Scientific and Technical Information of China (English)

    JIANG Shao-Ji; WANG Chao-Yi; TANG Ji-Jia; HU Lin-Xin

    2008-01-01

    @@ We demonstrate that thin films with micro/nanometre controllable morphology can be fabricated by the glancing angle deposition (GLAD) technique which is a physical vapour deposition technique.In this technique, there are parameters which determine the morphology of the thin films: the incident angle, ratio of the deposition rate with respect to the substrate rotation rate, nature of the material being deposited, etc.We fabricate the morphology of column, pillar, helices, zigzag and study the parameters which determine morphology by given some examples of SEM.

  11. Prism coupling technique investigation of elasto-optical properties of thin polymer films

    Science.gov (United States)

    Ay, Feridun; Kocabas, Askin; Kocabas, Coskun; Aydinli, Atilla; Agan, Sedat

    2004-12-01

    The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three different polymers; polystyrene, polymethyl-methacrylate, and benzocyclobutane. The out-of-plane elastic modulus, refractive index, film thickness, and birefringence of thin polymer films were determined by means of the prism coupling technique. The effect of the applied stress on the refractive index and birefringence of the films was investigated. Three-dimensional finite element method analysis was used so as to obtain the principal stresses for each polymer system, and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined. It was found that the applied stress in the out-of-plane direction of the thin films investigated leads to negative elasto-optic coefficients, as observed for all the three thin polymer films.

  12. Bioactive glass thin films synthesized by advanced pulsed laser techniques

    Science.gov (United States)

    Mihailescu, N.; Stan, George E.; Ristoscu, C.; Sopronyi, M.; Mihailescu, Ion N.

    2016-10-01

    Bioactive materials play an increasingly important role in the biomaterials industry, and are extensively used in a range of applications, including biodegradable metallic implants. We report on Bioactive Glasses (BG) films deposition by pulsed laser techniques onto biodegradable substrates. The BG coatings were obtained using a KrF* excimer laser source (λ= 248 nm, τFWHM ≤ 25 ns).Their thickness has been determined by Profilometry measurements, whilst their morphology has been analysed by Scanning Electron Microscopy (SEM). The obtained coatings fairly preserved the targets composition and structure, as revealed by Energy Dispersive X-Ray Spectroscopy, Grazing Incidence X-Ray Diffraction, and Fourier Transform Infra-Red Spectroscopy analyses.

  13. Synthesis of LiVO{sub 3} thin films by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Bouzidi, A., E-mail: bouzidi_attou@yahoo.f [Laboratoire d' Elaboration et de Caracterisations des Materiaux, Departement d' Electronique, Universite Djillali Liabes, BP89, Sidi Bel Abbes 22000 (Algeria); Benramdane, N.; Medles, M.; Khadraoui, M. [Laboratoire d' Elaboration et de Caracterisations des Materiaux, Departement d' Electronique, Universite Djillali Liabes, BP89, Sidi Bel Abbes 22000 (Algeria); Bresson, S. [Laboratoire de Biochimie, INSERM, ERI 12, Centre Hospitalier Universitaire, Universite de Picardie Jules Verne, Place Victor Pauchet, F-80000 Amiens (France); Mathieu, C.; Desfeux, R. [Universite d' Artois, Faculte Jean Perrin, Rue Jean Souvraz, SP18, 62307 Lens (France); Marssi, M. El. [Laboratoire de Physique de la Matiere Condensee, Universite de Picardie Jules Verne, 33 rue St. Leu, 80039 Amiens (France)

    2010-08-06

    Lithium metavanadate thin films were successfully deposited on glass substrates by spray pyrolysis technique at substrate temperature of 250 {sup o}C. 0.2 M spraying solution was prepared by mixing appropriate volumes of LiCl and VCl{sub 3} solutions. Structural, vibrational and optical properties of deposited film are discussed. X-ray diffraction and micro-Raman spectroscopy have revealed that LiVO{sub 3} with monoclinic symmetry was obtained. Optical properties of thin film were studied from transmission measurement in the range UV-Visible.

  14. Ultrasonically assisted intercalation of Ni in Al2O3 thin film prepared by SILAR technique

    Science.gov (United States)

    Dhanayat, Swapnali; Digraskar, Renuka; Gattu, Ketan; Upadhye, Deepak; Mahajan, Sandeep; Sharma, Ramphal; Ghule, Anil

    2013-06-01

    The Al2O3 thin film were prepared by successive ionic layer adsorption and reaction (SILAR) technique and annealed at 250 °C. Thereafter, Ni was ultrasonically intercalated in Al2O3 thin films for different sonication time period of 5 and 10s, and subsequently annealed at 250 °C to form NiO-Al2O3. The films were further characterized using scanning electron microscopy, energy dispersive X-ray analysis, UV-Vis spectrophotometer and I-V system, to study morphological, compositional, optical and electrical properties.

  15. Magnetic ordering in nickel-zinc nanoferrite thin film formed by Langmuir Blodgett technique

    Science.gov (United States)

    Thakur, Sangeeta; Pandit, Pallavi; Sharma, S. K.; Katyal, S. C.; Singh, Mahavir; Gupta, Ajay

    2013-12-01

    Nickel-zinc nanoferrite thin films, which reveal application for magnetic materials, were prepared by Langmuir-Blodgett technique. X-ray reflectivity fitting was done using three layer model. Thickness of a monolayer of nanoparticles is obtained as 23.5 Å. Surface roughness increases as the thickness of the film increases. Fourier transform infrared spectra confirmed that the structure remains cubic spinel after thin film formation. We have measured zero-field cooled and field cooled magnetization and discussed the behavior in three parts: the ferromagnetic part, transition region, and the superparamagnetic part.

  16. Refractive index dispersion of swift heavy ion irradiated BFO thin films using Surface Plasmon Resonance technique

    Science.gov (United States)

    Paliwal, Ayushi; Sharma, Savita; Tomar, Monika; Singh, Fouran; Gupta, Vinay

    2016-07-01

    Swift heavy ion irradiation (SHI) is an effective technique to induce defects for possible modifications in the material properties. There is growing interest in studying the optical properties of multiferroic BiFeO3 (BFO) thin films for optoelectronic applications. In the present work, BFO thin films were prepared by sol-gel spin coating technique and were irradiated using the 15 UD Pelletron accelerator with 100 MeV Au9+ ions at a fluence of 1 × 1012 ions cm-2. The as-grown films became rough and porous on ion irradiation. Surface Plasmon Resonance (SPR) technique has been identified as a highly sensitive and powerful technique for studying the optical properties of a dielectric material. Optical properties of BFO thin films, before and after irradiation were studied using SPR technique in Otto configuration. Refractive index is found to be decreasing from 2.27 to 2.14 on ion irradiation at a wavelength of 633 nm. Refractive index dispersion of BFO thin film (from 405 nm to 633 nm) before and after ion radiation was examined.

  17. Formation and Characterization of Alaminum Thin Films Produced by Laser Induced Forward Transfer Technique

    Directory of Open Access Journals (Sweden)

    Nafie A. ALMUSLET

    2012-12-01

    Full Text Available Picoseconds Nd – YAG laser was used in this work to irradiate pure samples of Aluminum (Al and produce plasma. The plasma plume was deposited as thin films, using Laser Induced Forward Transfer (LIFT technique, on two different types of substrate; the first one from copper and the second one from agate (SiO2. The thin films were characterized using scanning electron microscope (SEM and Energy Dispersive Analysis of X-rays (EDAX, in addition to scratch and scotch-tape for adhesion test. The effects of laser power density, the target thickness and the type of substrate on the homogeneity and adhesion of the films were investigated. The best conditions were: 2∙1013 W/cm2 laser power density, 2 µm target thickness and agate substrate. Al thin films with high quality were deduced using these conditions.

  18. Study of photoconductivity in Ni doped CdS thin films prepared by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Patidar, Manju Mishra, E-mail: manjumishra.iuc@gmail.com; Gangrade, Mohan; Nath, R.; Ganesan, V. [UGC-DAE Consortium for Scientific Research, Khandawa Road, Indore 452001 (India); Ajay, Akhil [Physics Department, University of Delhi, Delhi-110007 (India); Wala, Arwa Dewas [Holkar Science College, Indore - 452001 (India); N, Kiran [Physics Department, University of Mysore, Mysore-570005 (India); Panda, Richa [AITR, Bhopal-462044 (India)

    2014-04-24

    Ni-doped cadmium sulphide [Cd{sub 1−x}Ni{sub x}S, (x=0, 0.03, 0.05 and 0.20)] thin films were investigated for photoconductive properties. The films were prepared by spray Pyrolysis technique (SPT). AFM and two probe resistivity measurements were carried out to analyze the morphological and electrical properties of the films. AFM shows the note worthy changes in the morphology where the nanorod structures in CdS is changed into nano particles with the Ni doping. The presence of persistence photo current is demonstrated and extensive photoconductivity analysis has been studied on these films.

  19. Spectroscopic studies of UV irradiated erythrosine B thin films prepared by spin coating technique.

    Science.gov (United States)

    Zeyada, H M; El-Mallah, H M; Atwee, T; El-Damhogi, D G

    2017-05-15

    The spectroscopic studies of erythrosine B thin films manufactured by the spin coating technique have been presented. The spectra of infrared absorption allow characterization of vibrational modes for erythrosine B in powder form, pristine and UV irradiated thin films. The absorption spectra recorded in UV-vis-NIR for pristine films of erythrosine B display two main bands. UV irradiation on erythrosine B films decreased absorbance over the spectra. Indirect allowed transition with optical energy gap of 2.57eV is observed in pristine films. UV irradiation introduced structural defects and decreased optical band gap. Some of the optical absorption parameters and their relation to UV irradiation times, namely molar extinction coefficient (ε), electronic dipole strength (q(2)), and oscillator strength (f), of the principal optical transitions have also been evaluated.

  20. Synthesis and characterization of ZnO thin film by low cost modified SILAR technique

    Directory of Open Access Journals (Sweden)

    Haridas D. Dhaygude

    2016-03-01

    Full Text Available The ZnO thin film is prepared on Fluorine Tin Oxide (FTO coated glass substrate by using SILAR deposition technique containing ZnSO4.7H2O and NaOH as precursor solution with 150 deeping cycles at 70 °C temperature. Nanocrystalline diamond like ZnO thin film is characterized by different characterization techniques such as X-ray diffraction (XRD, Fourier transform (FT Raman spectrometer, Field Emission Scanning Electron Microscopy (FE-SEM with Energy dispersive X-Ray Analysis (EDAX, optical absorption, surface wettability and photoelectrochemical cell performance measurement. The X-ray diffraction analysis shows that the ZnO thin film is polycrystalline in nature having hexagonal crystal structure. The FT-Raman scattering exhibits a sharp and strong mode at 383 cm−1 which confirms hexagonal ZnO nanostructure. The surface morphology study reveals that deposited ZnO film consists of nanocrystalline diamond like morphology all over the substrate. The synthesized thin film exhibited absorption wavelength around 309 nm. Optical study predicted the direct band gap and band gap energy of this film is found to be 3.66 eV. The photoelectrochemical cell (PEC parameter measurement study shows that ZnO sample confirmed the highest values of, short circuit current (Isc - 629 mAcm−2, open circuit voltage (Voc - 878 mV, fill factor (FF - 0.48, and maximum efficiency (η - 0.89%, respectively.

  1. A novel electron beam evaporation technique for the deposition of superconducting thin films

    Science.gov (United States)

    Krishna, M. G.; Muralidhar, G. K.; Rao, K. N.; Rao, G. M.; Mohan, S.

    1991-05-01

    Superconducting thin films of BiSrCaCuO have been deposited using a novel electron beam evaporation technique. In this technique the crucible has a groove around its circumference and rotates continuously during deposition. The source material is loaded in the form of pellets of the composite. Both oxides as well as flourides have been used in the starting material and a comparison of the film properties has been made. The best film was obtained on a MgO(100) substrate with a Tc onset at 85 K and Tc zero at 77 K using calcium flouride in the source material.

  2. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Energy Technology Data Exchange (ETDEWEB)

    Birjega, R. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Vlad, A., E-mail: angela.vlad@gmail.com [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M. [National Institute for Lasers, Plasma and Radiation Physics, 409 Atomistilor Str., 77125 Bucharest-Magurele (Romania); Zavoianu, R. [University of Bucharest, Faculty of Chemistry, Department of Chemical Technology and Catalysis, 4-12 Regina Elisabeta Bd., Bucharest 030018 (Romania); Raditoiu, V.; Corobea, M.C. [National R.& D. Institute for Chemistry and Petrochemistry, ICECHIM, 202 Splaiul Independentei Str., CP-35-274, 060021 Bucharest (Romania)

    2016-06-30

    Highlights: • PLD and MAPLE was successfully used to produce organo-layered double hydroxides. • The organic anions (dodecyl sulfate-DS) were intercalated in co-precipitation step. • Zn2.5Al-LDH (Zn/Al = 2.5) and Zn2.5Al-DS thin films obtained in this work could be suitable for further applications as hydrophobic surfaces. - Abstract: We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn{sup 2+}/Al{sup 3+} ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  3. Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

    Science.gov (United States)

    Du, Wenhan; Yang, Jingjing; Xiong, Chao; Zhao, Yu; Zhu, Xifang

    2017-07-01

    In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

  4. Selective reflection technique as a probe to monitor the growth of a metallic thin film on dielectric surfaces

    CERN Document Server

    Martins, Weliton Soares; Chevrollier, Martine; de Silans, Thierry Passerat

    2013-01-01

    Controlling thin film formation is technologically challenging. The knowledge of physical properties of the film and of the atoms in the surface vicinity can help improve control over the film growth. We investigate the use of the well-established selective reflection technique to probe the thin film during its growth, simultaneously monitoring the film thickness, the atom-surface van der Waals interaction and the vapor properties in the surface vicinity.

  5. Mechanical properties of ultra thin metallic films revealed by synchrotron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Patric Alfons

    2007-07-20

    A prerequisite for the study of the scaling behavior of mechanical properties of ultra thin films is a suitable testing technique. Therefore synchrotron-based in situ testing techniques were developed and optimized in order to characterize the stress evolution in ultra thin metallic films on compliant polymer substrates during isothermal tensile tests. Experimental procedures for polycrystalline as well as single crystalline films were established. These techniques were used to systematically investigate the influence of microstructure, film thickness (20 to 1000 nm) and temperature (-150 to 200 C) on the mechanical properties. Passivated and unpassivated Au and Cu films as well as single crystalline Au films on polyimide substrates were tested. Special care was also dedicated to the microstructural characterization of the samples which was very important for the correct interpretation of the results of the mechanical tests. Down to a film thickness of about 100 to 200 nm the yield strength increased for all film systems (passivated and unpassivated) and microstructures (polycrystalline and singlecrystalline). The influence of different interfaces was smaller than expected. This could be explained by a dislocation source model based on the nucleation of perfect dislocations. For polycrystalline films the film thickness as well as the grain size distribution had to be considered. For smaller film thicknesses the increase in flow stress was weaker and the deformation behavior changed because the nucleation of perfect dislocations became unfavorable. Instead, the film materials used alternative mechanisms to relieve the high stresses. For regular and homogeneous deformation the total strain was accommodated by the nucleation and motion of partial dislocations. If the deformation was localized due to initial cracks in a brittle interlayer or local delamination, dislocation plasticity was not effective enough to relieve the stress concentration and the films showed

  6. A study on the microwave responses of YBCO and TBCCO thin films by coplanar resonator technique

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    YBa2CuaO7(YBCO) thin films have been prepped by thermal coevaporation on LaAlO3 (LAO) substrates, and Tl2Ba2CaCu2O8(TBCCO) thin films are synthesized by magnetron sputtering method on LAO substrates. The transition temperature Tc is 90 K for YBCO/LAO and 104K for TBCCO/LAO. Microwave responses of the films are studied systematically by coplanar resonator technique. Energu gaps of the films obtained are △0 = 1.04kBTc for YBCO films and △0 = 0.84kBTc for TBCCO films by analysing the temperature dependence of resonant frequencies of coplanar resonator. Penetration depth at 0K λ0 = 198 nm for YBCO films and λ0 = 200 nm for TBCCO films could also be obtained by using the weak coupling theory and two fluid theory. Results of penetration depth and energy gap confirm the weak coupling properties of the films. In addition, microwave surface resistances Rs of YBCO/LAO and TBCCO/LAO are also investigated by analysing the quality factor and insert loss of the coplanar resonator. Surface resistance of TBCCO/LAO is less than that of YBCO/LAO, so that TBCCO/LAO films may have more potential applications.

  7. Study of SnS2 thin film deposited by spin coating technique

    Science.gov (United States)

    Chaki, Sunil H.; Joshi, Hardikkumar J.; Tailor, Jiten P.; Deshpande, M. P.

    2017-07-01

    Thin film deposition of SnS2 was done by spin coating technique at ambient temperature. Deposition was done for different spin speed and spin time. The film thickness dependence on spin speed and spin time was studied. The spin speed was varied from 1000 rpm to 2000 rpm and spin time from 2 s to 6 s for constant speed of 1000 rpm. The elemental composition and crystal structure along with the phase of the as-deposited thin film was determined by the energy dispersive analysis of x-ray (EDAX) and x-ray diffraction (XRD) techniques respectively. The as-deposited thin film was found to be near stoichiometric and possess hexagonal crystal structure with determined lattice parameters in good agreement with the reported values. The crystallite size calculated from the XRD data using Scherrer’s formula and Hall-Williamson relation came out to be 9.77 nm and 6.49 nm, respectively. The transmission electron microscopy (TEM) study of spin deposited thin films showed the film to be continuous. Surface study of the as-deposited thin film was done by simple optical microscope and scanning electron microscope (SEM). The study showed that the deposited thin film to be flat and uniform without visible cracks and pores. The optical spectroscopy study of the as-deposited thin film showed that the optical bandgap value decreases with increase in film thickness. The d.c. electrical resistivity variation with temperature for spin coating as-deposited SnS2 film showed that the resistivity decreases with increase in temperature corroborating the semiconducting nature. The resistivity variation plot possesses two slopes. The temperature ranges showing two slopes lay between 300 to 383 K and 384 to 423 K having activation energy values for the two temperature ranges as 0.072 eV and 0.633 eV, respectively. The achieved results are deliberated in details.

  8. Formulation of mefenamic acid loaded transfersomal gel by thin film hydration technique and hand shaking method

    Directory of Open Access Journals (Sweden)

    Krishna Sailaja

    2017-04-01

    Full Text Available Objective(s: The aim of present study is to formulate mefenamic acid transdermal gel based on vesicular drug delivery approaches.Materials and Methods: For the preparation of mefenamic acid transdermal gel, transfersomes were selected as colloidal carriers. Transfersomes were prepared by hand shaking and thin film hydration techniques. The obtained transfersomes were characterized for vesicular diameter, zeta potential, drug content, entrapment efficiency and in vitro diffusion studies.Results: Among Different formulations of transfersomes, T10(prepared by thin film hydration and containing soya lecithin: span60 ratio 1:2 was considered as the best formulation because of its mean vesicular diameter of 369 nm, zeta potential of -14 mV, drug content of 99.6%, entrapment efficiency of 84.4%, and sustained drug release of 93.3% after 12 h.T10 formulation was incorporated into gel. Comparative study was made among plain gel, and transfersomal gel. Among these two gels, transfersomal gel considered as best because of its highest drug content (91%, spreadability (43.5 g.cm/sec, pH (6.9 and sustained drug release profile for 12 h.Conclusion: By comparing  hand shaking and thin film hydration techniques, it was found thin film hydration technique produced better results and transfersomal gel was indicated better results than plain gel.

  9. Characterization of isolated polyamide thin films of RO and NF membranes using novel TEM techniques

    KAUST Repository

    Pacheco, Federico A.

    2010-08-15

    Achieving a better understanding of transport and rejection mechanisms in RO and NF membranes requires more detailed information of the nanostructure of polyamide thin films. This study reports on two novel transmission electron microscopy (TEM) techniques for characterizing polyamide nanostructure. The first technique produces cross-sectional images of isolated polyamide thin films by removing the polysulfone support from regular TEM cross-sections. In the second technique called " projected area" TEM (PA-TEM), isolated polyamide thin films are placed with their surface perpendicular to the electron beam. The resulting images capture the thickness, morphology and mass density of the entire thin film. In combination, these new techniques provide information on polyamide nanostructure that is not evident using conventional methods. For the commercial RO membrane ESPA3, the cross-sectional view of the isolated polyamide thin film shows a 30-60. nm thick base of nodular polyamide (presumably the separation barrier) that forms a relatively smooth interface with the polysulfone support. Above this, a more open structure of loose polyamide extends outward giving rise to the ridge-and-valley surface structure. In PA-TEM images, the ridges and valleys correspond to the dark and bright regions, respectively; the polyamide nodular base appears as round features forming an irregular honeycomb pattern throughout the images. Membrane cross-sections were prepared with a simple resin embedding protocol using the acrylic resin LR White. The protocol did not require dehydration steps, and was applicable to both dry and wet membrane samples. Artifacts that may be produced during sample preparation were also documented. © 2010 Elsevier B.V.

  10. Characterization of cobalt oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Louardi, A.; Rmili, A.; Ouachtari, F.; Bouaoud, A. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco)

    2011-09-15

    Highlights: > Co{sub 3}O{sub 4} thin films show a micro porous structure. > Co{sub 3}O{sub 4} thin films are formed with spherical grains less than 50 nm in diameter. > The porous structure of Co{sub 3}O{sub 4} films is expected to have promising application in electrochromism. - Abstract: Cobalt oxide (Co{sub 3}O{sub 4}) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of hydrated cobalt chloride salt (CoCl{sub 2}.6H{sub 2}O) as source of cobalt. The films were deposited onto the amorphous glass substrates kept at different temperatures (300-500 deg. C). The influences of molar concentration of the starting solution and substrate temperature on the structural, morphological and optical properties of (Co{sub 3}O{sub 4}) thin films were studied. It was found from X-ray diffraction (XRD) analysis that the films prepared with molar concentration greater than 0.025 M/L were polycrystalline spinel type cubic structure. The preferred orientation of the crystallites of these films changes gradually from (6 2 2) to (1 1 1) when the substrate temperature increases. By Raman spectroscopy, five Raman active modes characteristic of Co{sub 3}O{sub 4} spinel type cubic structure were found and identified at 194, 484, 522, 620 and 691 cm{sup -1}. The scanning electron microscopy (SEM) images showed micro porous structure with very fine grains less than 50 nm in diameter. These films exhibited also a transmittance value of about 70% in the visible and infra red range.

  11. Evaluating interfacial adhesion properties of Pt/Ti thin-film by using acousto-optic technique

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hae Sung [Graduate School of Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of); Didie, David; Yoshida, Sanichiro [Dept. of Chemistry and Physics, Southeastern Louisiana University, Hammond (United States); Park, Ik Keun [Dept. of Mechanical and Automotive Engineering, Seoul National University of Science and Technology, Seoul (Korea, Republic of)

    2016-06-15

    We propose an acousto-optic technique for the nondestructive evaluation of adhesion properties of a Pt/Ti thin-film interface. Since there are some problems encountered when using prevailing techniques to nondestructively evaluate the interfacial properties of micro/nano-scale thin-films, we applied an interferometer that combined the acoustic and optical methods. This technique is based on the Michelson interferometer but the resultant surface of the thin film specimen makes interference instead of the mirror when the interface is excited from the acoustic transducer at the driving frequency. The thin film shows resonance-like behavior at a certain frequency range, resulting in a low-contrast fringe pattern. Therefore, we represented quantitatively the change in fringe pattern as a frequency spectrum and discovered the possibility that the interfacial adhesion properties of a thin film can be evaluated using the newly proposed technique.

  12. Enhanced photoelectrochemical performance of Ag-ZnO thin films synthesized by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Tarwal, N.L. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416004, Maharashtra (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.in [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416004, Maharashtra (India)

    2011-07-15

    Highlights: > Synthesis of Ag-ZnO nanocomposites by spray pyrolysis technique. > Examine the effect of Ag doping on the structural, morphological optical, and photoelectrochemical properties. > Surface Plasmon Resonance phenomenon of the spray deposited Ag-ZnO nanocomposites. > Enhancement in photoelectrochemical performance of ZnO thin films after Ag doping. - Abstract: Silver doped zinc oxide (Ag-ZnO) thin films were deposited on glass and tin doped indium oxide (ITO) coated glass substrates by using pneumatic spray pyrolysis technique (SPT) at 450 deg. C from aqueous solutions of zinc acetate and silver nitrate precursors. The effect of silver doping on structural, morphological and optical properties of films was studied. The XRD spectra of the Ag-ZnO films indicate the polycrystalline nature having hexagonal crystal structure. SEM micrographs show the uniform distribution of spherical grains of about 80-90 nm grain size for the pure ZnO thin films. The Ag nanoparticles are clearly visualized in SEM images of Ag-ZnO samples. The optical band gap energy decreases as the percentage of silver doping increases. Surface Plasmon Resonance (SPR) related phenomena are observed and correlated to the optical properties of Ag-ZnO thin films. The overall photoelectrochemical (PEC) performance of the samples was investigated and discussed. Moreover, the samples are more photoactive as compare to the pure ZnO sample and the sample ZnOAg{sub 15} shows the highest current. The photocurrent increases upto 249 {mu}A cm{sup -2} and 303 {mu}A cm{sup -2} in visible light and in UV illumination, respectively, and then decreases as the Ag doping increases into the film.

  13. Organo-layered double hydroxides composite thin films deposited by laser techniques

    Science.gov (United States)

    Birjega, R.; Vlad, A.; Matei, A.; Dumitru, M.; Stokker-Cheregi, F.; Dinescu, M.; Zavoianu, R.; Raditoiu, V.; Corobea, M. C.

    2016-06-01

    We used laser techniques to create hydrophobic thin films of layered double hydroxides (LDHs) and organo-modified LDHs. A LDH based on Zn-Al with Zn2+/Al3+ ratio of 2.5 was used as host material, while dodecyl sulfate (DS), which is an organic surfactant, acted as guest material. Pulsed laser deposition (PLD) and matrix assisted pulsed laser evaporation (MAPLE) were employed for the growth of the films. The organic anions were intercalated in co-precipitation step. The powders were subsequently used either as materials for MAPLE, or they were pressed and used as targets for PLD. The surface topography of the thin films was investigated by atomic force microscopy (AFM), the crystallographic structure of the powders and films was checked by X-ray diffraction. FTIR spectroscopy was used to evidence DS interlayer intercalation, both for powders and the derived films. Contact angle measurements were performed in order to establish the wettability properties of the as-prepared thin films, in view of functionalization applications as hydrophobic surfaces, owing to the effect of DS intercalation.

  14. Rare Earth Oxide Thin Films

    CERN Document Server

    Fanciulli, Marco

    2007-01-01

    Thin rare earth (RE) oxide films are emerging materials for microelectronic, nanoelectronic, and spintronic applications. The state-of-the-art of thin film deposition techniques as well as the structural, physical, chemical, and electrical properties of thin RE oxide films and of their interface with semiconducting substrates are discussed. The aim is to identify proper methodologies for the development of RE oxides thin films and to evaluate their effectiveness as innovative materials in different applications.

  15. Influence of zinc precursor concentration on properties zinc sulphide thin films using spray pyrolysis technique

    Science.gov (United States)

    Veena, E.; Bangera, Kasturi V.; Shivakumar, G. K.

    2017-07-01

    Stoichiometric high transparent n-zinc sulphide thin films were prepared using chemical spray pyrolysis technique. The concentration of the cationic precursor played a major role to obtain stoichiometry, regardless of various deposition parameters. Zinc sulphide films deposited at 450˚C for the ratio 0.33:1 (Zn:S) resulted in well oriented, stoichiometric polycrystalline cubic structure. The variation in crystallite size associated with the cationic precursor concentration provides significant control over the structural, optical and electrical properties of the films. The optical band gap and activation energy of stoichiometric ZnS films were found to be 3.54 ± 0.02eV and 0.82 ± 0.05eV, respectively. The absorption coefficient of the films was found to be 102 cm-1.

  16. Growth of ZnS, CdS and multilayer ZnS/CdS thin films by SILAR technique

    Science.gov (United States)

    Valkonen, Mika P.; Kanniainen, Tapio; Lindroos, Seppo; Leskelä, Markku; Rauhala, Eero

    1997-08-01

    Successive ionic layer adsorption and reaction (SILAR) technique was used to deposit cadmium sulfide (CdS) and zinc sulfide (ZnS) thin films on (100)GaAs. CdS thin films were also grown on ITO-covered glass substrates. Multilayer CdS/ZnS thin films were deposited on glass substrates. The crystallinity of the thin films was characterized by means of X-ray diffraction and they all turned out to be polycrystalline. The thin films looked relatively smooth and homogeneous in scanning electron microscopy (SEM) images. Energy dispersive X-ray analysis (EDX) and Rutherford backscattering spectroscopy (RBS) proved nearly 1 : 1 stoichiometry for the multilayer samples. Thickness of the thin films was measured by RBS and chemical analysis.

  17. Cd xZn 1- xS solid solution thin films, CdS thin films and CdS/ZnS multilayer thin films grown by SILAR technique

    Science.gov (United States)

    Valkonen, Mika P.; Lindroos, Seppo; Leskelä, Markku

    1998-09-01

    Cd xZn 1- xS solid solution thin films were grown by successive ionic layer adsorption and reaction (SILAR) technique on soda lime glass, ITO-covered glass and polymer substrates. In addition, CdS thin films and CdS/ZnS multilayer thin films were deposited on polymer substrates. The thin films were characterized by X-ray diffraction and energy dispersive X-ray analysis. The Cd xZn 1- xS films were polycrystalline and cubic (111) or hexagonal (002) oriented. The cation/anion ratios were 1 : 1. In XRD, the CdS/ZnS multilayer samples showed not only reflections of CdS, ZnS, but also Cd xZn 1- xS formed in the interface. The Cd xZn 1- xS thin films and CdS/ZnS multilayer thin films could be tailored to a set of various composition and structure.

  18. Investigation of effect of annealing on thermally evaporated ZnSe thin films through spectroscopic techniques

    Science.gov (United States)

    Mahesha, M. G.; Rashmitha; Meghana, N.; Padiyar, Meghavarsha

    2017-09-01

    ZnSe thin films have been grown on clean glass substrates by thermal evaporation technique and deposited films have been annealed at 473 K. William-Hall method has been adopted to extract information on crystallite size and internal strain in the film from X-ray diffractogram. Effect of annealing on ZnSe films has been analyzed by spectroscopic techniques which include optical absorption, Raman, and photoluminescence spectroscopy. From optical absorption, band gap has been estimated along with other optical parameters like refractive index and extinction coefficient. Also, Urbach tail, which originates near bad edge due to structural disorders, has been characterized. Raman spectra have been analyzed to get the information on the influence of crystallite size and strain effect on peak position, intensity and width. Photoluminescence spectra have been recorded and analyzed to get an insight on defect levels induced due to vacancies, interstadials, and impurity complexes.

  19. Appropriate materials and preparation techniques for polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1997-03-01

    techniques have paved the way for obtaining epitaxial Hg1-xCdxTe thin films at substrate temperatures of ~180 °C with the desired crystalline perfection, stoichiometry, and doping without the necessity of further annealing for improving either the crystalline quality or dopant activity. Retaining larger mercury proportions during annealing would require heated enclosures as in isothermal VPE, hot-wall technique, vacuum evaporation, hot-wall MOCVD, or close-space sublimation. Pb1-xCdxTe thin films can be prepared by magnetron sputtering from cooled Pb1-xCdxTe targets on heated substrates. Hot-wall technique is suitable for the deposition of Pb1-xCdxTe thin films. Hg1-xCdxTe and Pb1-xCdxTe TPV cells will benefit from the substantial work on CdTe thin film solar cells. The paper reviews work on thin films of ternary and pseudoternary compounds of interest for TPV conversion and methods of their preparation with a view to choosing the appropriate materials and fabrication techniques for polycrystalline-thin-film TPV cells.

  20. Studies of ferroelectric heterostructure thin films and interfaces via in situ analytical techniques.

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O.; Dhote, A.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Mueller, A. H.; Ramesh, R.

    1999-08-30

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMs) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and interface processes, which play critical roles in film microstructure and properties. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed.

  1. Structural, Optical and Electrical Properties of Thin Films Using Nebulizer Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    R. Mariappan

    2013-01-01

    Full Text Available thin films have been deposited on glass substrates at substrate temperature 400°C through nebulizer spray pyrolysis technique. X-ray diffraction (XRD analysis shows that the films structure is changed from hexagonal to tetragonal. The high-resolution scanning electron microscopy (HRSEM studies reveal that the substrate is well covered with a number of grains indicating compact morphology with an average grain size 50–79 nm. Energy dispersive X-ray analysis (EDAX reveals the average ratio of the atomic percentage. Optical transmittance study shows the presence of direct transition. Band gap energy decreases from 3.33 to 2.87 eV with respect to the rise of Sn content. The electrical resistivity of the thin films was found to be 106 Ω-m.

  2. Tight comparison of Mg and Y thin film photocathodes obtained by the pulsed laser deposition technique

    Science.gov (United States)

    Lorusso, A.; Gontad, F.; Solombrino, L.; Chiadroni, E.; Broitman, E.; Perrone, A.

    2016-11-01

    In this work Magnesium (Mg) and Yttrium (Y) thin films have been deposited on Copper (Cu) polycrystalline substrates by the pulsed laser ablation technique for photocathode application. Such metallic materials are studied for their interesting photoemission properties and are proposed as a good alternative to the Cu photocathode, which is generally used in radio-frequency guns. Mg and Y films were uniform with no substantial differences in morphology; a polycrystalline structure was found for both of them. Photoemission measurements of such cathodes based on thin films were performed, revealing a quantum efficiency higher than Cu bulk. Photoemission theory according to the three-step model of Spicer is invoked to explain the superior photoemission performance of Mg with respect to Y.

  3. Preparation and properties of ZnO thin films deposited by sol-gel technique

    Institute of Scientific and Technical Information of China (English)

    LAN Wei; PENG Xingping; LIU Xueqin; HE Zhiwei; WANG Yinyue

    2007-01-01

    Zinc oxide (ZnO) thin films were deposited on (100) Si substrates by sol-gel technique.Zinc acetate was used as the precursor material.The effect of different anneal-ing atmospheres and annealing temperatures on composition, structural and optical properties of ZnO thin films was inves-tigated by using Fourier transform infrared spectroscopy, X-ray diffraction,atomic force microscopy and photolumi-nescence (PL),respectively.At an annealing temperature of 400℃ in N2 for 2 h,dried gel films were propitious to undergo structural relaxation and grow ZnO grains.ZnO thin film annealed at 400℃ in N2 for 2 h exhibited the optimal structure and PL property,and the grain size and the lattice constants of the film were calculated (41.6 nm,a = 3.253 A and c=5.210A).Moreover,a green emission around 495 nm was observed in the PL spectra owing to the oxygen vacancies located at the surface of ZnO grains.With increas- ing annealing temperature,both the amount of the grown ZnO and the specific surface area of the grains decrease,which jointly weaken the green emission.

  4. Studies on Gold Doped Lead Sulphide Thin Films Grown by Silar Technique

    Science.gov (United States)

    Preetha, K. C.; Murali, K. V.; Ragina, A. J.; Deepa, K.; Remadevi, T. L.

    2011-10-01

    Narrow band gap lead chalcogenide semiconductors have been widely used in various solid state midinfrared devices, such as light emitting devices (LEDs), laser diodes (LDs), detectors, and thermoelectric generators. In this article, the subject of research is the synthesis and characterization of PbS thin films doped with gold nanoparticles and nanorods. The successive ionic layer adsorption and reaction (SILAR) technique was used to deposit PbS nanostructured films on glass substrates. The optimization of various preparative parameters resulted in mirror like smooth, uniform films with metallic appearance. Characterization of the films has been carried out using x-ray diffraction, scanning electron microscopy, optical and electrical resistivity studies. Experimental results showed that the growth parameters and doping influenced the structure, the morphology and the optical properties of PbS films. X-ray diffraction studies confirmed the cubic nanocrystalline PbS phase formation with average crystallite size in the range 16-20 nm. Doping induced increase in the grain size, which is in agreement with SEM morphology also. EDAX studies confirmed the presence of lead, sulfur along with gold crystallites in the films. All films show higher absorption in the visible-near infrared region of the spectrum. The low transmittance in the UV-VIS region offers the possibility of using the samples as solar control coatings. The films are found to be p type and the electrical conductivity decreases slightly on doping. The observed conductivity is of the order of 10-8 (Ω cm)-1. The present work established the flexibility of SILAR method to prepare good quality thin films by cost effective technique.

  5. Nanostructured TiO2 thin films for DSSCs prepared by sol gel technique

    Science.gov (United States)

    Bakar, Siti Noraini Abu; Abdullah, Huda; Mahbor, Kamisah Mohamad

    2017-07-01

    In this research, nanostructured TiO2 thin films were prepared by sol-gel technique for dye-sensitized solar cells (DSSCs) were investigated. The nanostructured thin films were prepared using commercial Titania powder (Degussa P25) and titanium (IV) ethoxide (TEOT). The resulting solution were spin-coated on pieces of indium-doped tin oxide (InO2:Sn, ITO) transparent glass (8 Ω/sq, TEC GlassTM) with an area of 10 × 10 mm2 at a rate of 2000 rpm for 30 seconds. The films were annealed in furnace at 450 °C for 60 min. The working electrode was then immersed in the solution of N-719 (Ruthenium) dye at room temperature for 24 h. A thin film of platinum (Pt) was deposited on the ITO-glass substrate as the counter electrode using print-screen technique. The structures, morphological and optical properties of the films, were examined using X-Ray Diffraction (XRD), Field Emission Scanning Electron Microscopy (FESEM) and UV-VIS spectrometer respectively. The XRD results showed that the crystalline phase of the film was anatase. The micrograph obtained using FESEM demonstrated that the prepared TiO2 film has a nanosructured characteristic. The photovoltaic properties of DSSC was studied under an incident irradiation of 100 mW/cm2. The energy conversion efficiency (η) of the DSSC with nanostuctured TiO2 (P25) and TiO2 was 0.3% and 0.2 % respectively.

  6. Microstrip coupling techniques applied to thin-film Josephson junctions at microwave frequencies

    DEFF Research Database (Denmark)

    Sørensen, O H; Pedersen, Niels Falsig; Mygind, Jesper

    1981-01-01

    Three different schemes for coupling to low impedance Josephson devices have been investigated. They all employ superconducting thin-film microstrip circuit techniques. The schemes are: (i) a quarterwave stepped impedance transformer, (ii) a microstrip resonator, (iii) an adjustable impedance...... transformer in inverted microstrip. Using single microbridges to probe the performance we found that the most primising scheme in terms of coupling efficiency and useful bandwidth was the adjustable inverted microstrip transformer....

  7. Simple technique for texture function analysis in granular thin film media

    Energy Technology Data Exchange (ETDEWEB)

    El-Hilo, M., E-mail: mhilo@rocketmail.co [Physics Department, University of Bahrain, P.O. 32038, Sakhir (Bahrain); Al Saie, J. [Physics Department, University of Bahrain, P.O. 32038, Sakhir (Bahrain); Morales, M.P. [Instituto de Ciencia de Materiales de Madrid, CSIC. Sor Juana Ines de la Cruz 3, 28049 Cantoblanco, Madrid (Spain); Pita, M. [Chemistry and Biomolecular Sciences Department, Clarkson University, 8 Clarkson Avenue, Box 5810, Potsdam, NY 13699 (United States)

    2009-11-15

    In this work a simple technique to extract the texture function in granular thin film media is implemented. The technique is based on previous work in which the distribution function of particles easy axes f(alpha) is calculated from the measured parallel remanence curve (M{sub rp}(beta)). In this simple technique we consider that the measured M{sub rp}(beta) curve can be fitted to a series of cos(2beta), i.e. M{sub rp}(beta)=B{sub 0}+B{sub 2} cos(2beta)+B{sub 4} cos(4beta) where the angle beta is the angle by which the film is rotated. This approximation is found to be valid when the texture function has a standard deviation >20 deg. On this basis, the constants B{sub 0}, B{sub 2} and B{sub 4} can be determined by using only three data points for the parallel remanence, M{sub rp}(0), M{sub rp}(45 deg.) and M{sub rp}(90 deg.). The new technique is applied to a textured thin film consisting of cobalt ferrite particles 17 nm in diameter and to a commercial Sony video tape. Using this simple technique, the obtained texture functions are found to be similar to those obtained from the full M{sub rp}(beta) curves. This new technique will furnish a simple method with which the texture function in 2D systems can be obtained.

  8. Dual gratings for enhanced light trapping in thin-film solar cells by a layer-transfer technique.

    Science.gov (United States)

    Schuster, Christian S; Kowalczewski, Piotr; Martins, Emiliano R; Patrini, Maddalena; Scullion, Mark G; Liscidini, Marco; Lewis, Liam; Reardon, Christopher; Andreani, Lucio C; Krauss, Thomas F

    2013-05-01

    Thin film solar cells benefit significantly from the enhanced light trapping offered by photonic nanostructures. The thin film is typically patterned on one side only due to technological constraints. The ability to independently pattern both sides of the thin film increases the degrees of freedom available to the designer, as different functions can be combined, such as the reduction of surface reflection and the excitation of quasiguided modes for enhanced light absorption. Here, we demonstrate a technique based on simple layer transfer that allows us to independently pattern both sides of the thin film leading to enhanced light trapping. We used a 400 nm thin film of amorphous hydrogenated silicon and two simple 2D gratings for this proof-of-principle demonstration. Since the technique imposes no restrictions on the design parameters, any type of structure can be made.

  9. Structural and optical properties of CdO thin films deposited by RF magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, G. Anil, E-mail: anilhcu@gmail.com; Reddy, M. V. Ramana, E-mail: anilhcu@gmail.com [Department of Physics, Osmania University, Hyderabad-500007 (India); Reddy, Katta Narasimha, E-mail: anilhcu@gmail.com [Department of Physics, Mahatma Gandhi University, Nalgonda-508003 (India)

    2014-04-24

    Cadmium oxide (CdO) thin films were deposited on glass substrate by r.f. magnetron sputtering technique using a high purity (99.99%) Cd target of 2-inch diameter and 3 mm thickness in an Argon and oxygen mixed atmosphere with sputtering power of 50W and sputtering pressure of 2×10{sup −2} mbar. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM). The XRD analysis reveals that the films were polycrystalline with cubic structure. The visible range transmittance was found to be over 70%. The optical band gap increased from 2.7 eV to2.84 eV with decrease of film thickness.

  10. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Science.gov (United States)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Alonizan, Norah; Althobaiti, Hayat Saeed

    In this work, zinc oxide (ZnO) multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD) confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM) showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV-Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications.

  11. Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques

    CERN Document Server

    Coban, A; Durrani, S A

    2002-01-01

    Nuclear reaction analysis techniques have been used to study the difference between bulk and thin film densities of different dielectric (WO sub 3 , MgF sub 2 , NdF sub 3 , LaF sub 3 and ThF sub 4) thin films. Thicknesses of the films were measured by optical methods. The sup 1 sup 8 O(p,alpha) sup 1 sup 5 N reaction was used at 730 keV to profile WO sub 3 prepared with different thicknesses on a tantalum backing by thermal evaporation of natural WO sub 3. We have also successfully tested the sup 1 sup 8 O(p,alpha) sup 1 sup 5 N reaction at the 629 keV (GAMMA=2.1 keV) resonance for the same purpose. Excitation function measurement of the reaction was performed around the resonant energy at a detection angle of 150 deg. . In order to obtain the oxygen profiles of the thin films non-resonant part of the excitation function was deconvoluted using the known cross-section data of the reaction. Also, we studied different films of MgF sub 2 , NdF sub 3 , LaF sub 3 and ThF sub 4 using the 483.85 keV resonance in the ...

  12. Zinc phthalocyanine thin film and chemical analyte interaction studies by density functional theory and vibrational techniques.

    Science.gov (United States)

    Saini, G S S; Singh, Sukhwinder; Kaur, Sarvpreet; Kumar, Ranjan; Sathe, Vasant; Tripathi, S K

    2009-06-03

    Thin films of zinc phthalocyanine have been deposited on KBr and glass substrates by the thermal evaporation method and characterized by the x-ray diffraction, optical, infrared and Raman techniques. The observed x-ray diffraction and infrared absorption spectra of as-deposited thin films suggest the presence of an α crystalline phase. Infrared and Raman spectra of thin films after exposure to vapours of ammonia and methanol have also been recorded. Shifts in the position of some IR and Raman bands in the spectra of exposed films have been observed. Some bands also show changes in their intensity on exposure. Increased charge on the phthalocyanine ring and out-of-plane distortion of the core due to interaction between zinc phthalocyanine and vapour molecules involving the fifth coordination site of the central metal ion may be responsible for the band shifts. Changes in the intensity of bands are interpreted in terms of the lowering of molecular symmetry from D(4h) to C(4v) due to doming of the core. Molecular parameters and Mulliken atomic charges of zinc phthalocyanine and its complexes with methanol and ammonia have been calculated from density functional theory. The binding energy of the complexes have also been calculated. Calculated values of the energy for different complexes suggest that axially coordinated vapour molecules form the most stable complex. Calculated Mulliken atomic charges show net charge transfer from vapour molecules to the phthalocyanine ring for the most stable complex.

  13. Multifunctional thin films of lactoferrin for biochemical use deposited by MAPLE technique

    Science.gov (United States)

    Constantinescu, Catalin; Palla-Papavlu, Alexandra; Rotaru, Andrei; Florian, Paula; Chelu, Florica; Icriverzi, Madalina; Nedelcea, Anca; Dinca, Valentina; Roseanu, Anca; Dinescu, Maria

    2009-03-01

    Lactoferrin (Lf) is an iron-binding glycoprotein present in almost all mammalian secretions which plays an important role in host defense against microbial and viral infections. The protein has been reported to also have anti-inflammatory activity and antitumoral effects in vitro and in vivo. Thin films of Lf were deposited on silicon, quartz and Thermanox plastic coverslip substrates by Matrix Assisted Pulsed Laser Evaporation (MAPLE) technique, using a Nd:YAG laser working at 266 nm, at different laser fluences (0.1-0.8 J cm -2). The deposited layers have been characterized by Fourier Transformed Infra-Red spectroscopy (FTIR), and the morphology of the various substrates was investigated by Atomic Force Microscopy (AFM). The biocompatibility of lactoferrin thin films was evaluated for each substrate, by in vitro biochemical tests.

  14. A comparative study of CdS thin films deposited by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Hernández, G., E-mail: german.perez@ujat.mx [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Pantoja-Enríquez, J. [Centro de Investigación y Desarrollo Tecnológico en Energías Renovables, UNICACH, Libramiento Norte No 1150, Tuxtla Gutiérrez, Chiapas 29039 (Mexico); Escobar-Morales, B. [Instituto Tecnológico de Cancún, Avenida Kábah Km 3, Cancún, Quintana Roo 77500 (Mexico); Martinez-Hernández, D.; Díaz-Flores, L.L.; Ricardez-Jiménez, C. [Universidad Juárez Autónoma de Tabasco, Avenida Universidad s/n, Col. Magisterial, Villahermosa, Tabasco 86040 (Mexico); Mathews, N.R.; Mathew, X. [Centro de Investigación en Energía, Universidad Nacional Autónoma de México, Temixco, Morelos 62580 (Mexico)

    2013-05-01

    Cadmium sulfide thin-films were deposited on glass slides and SnO{sub 2}:F coated glass substrates by chemical bath deposition, sputtering and close-spaced sublimation techniques. The films were studied for the structural and opto-electronic properties after annealing in an ambient identical to that employed in the fabrication of CdTe/CdS devices. Quantum efficiency of the CdTe/CdS solar cells fabricated with CdS buffer films prepared by the three methods were investigated to understand the role of CdS film preparation method on the blue response of the devices. The higher blue response observed for the devices fabricated with chemical bath deposited CdS film is discussed. - Highlights: ► CdS films were prepared by different techniques. ► Role of CdS on the blue response of device was studied. ► Structural and optical properties of CdS were analyzed. ► Chemically deposited CdS has high blue transmittance. ► CdS deposition method influences diffusion of S and Te.

  15. Thin Films

    Directory of Open Access Journals (Sweden)

    M. Benmouss

    2003-01-01

    the optical absorption are consistent with the film color changes. Finally, the optical and electrochromic properties of the films prepared by this method are compared with those of our sputtered films already studied and with other works.

  16. A novel in-situ technique to fabricate thin films with controlled lateral thickness modulations

    Science.gov (United States)

    Zhang, Chi

    Surfaces having well-defined morphologies like periodic arrays of dots or lines, promise useful applications. Magnetic nanodots of Co and Fe-alloys are useful in patterned magnetic recording media. Well controlled grain size and surface area of nanostructured TiO2 are useful to develop efficient photocatalysts. However, there is a continuing need to develop techniques to make such surfaces in a simple and economical manner. In this thesis, a previously unexplored in-situ approach to assemble lateral patterns in thin films was proposed and investigated. Simple models of film growth on a defect free surface show that under uniform areal deposition rates and surface temperatures, nucleation occurs at random positions on the surface. We proposed that by exposing a growing thin film to a spatially varying surface temperature distribution, nucleation and growth can be confined to specific spatial locations. Consequently, a film with a desired pattern or thickness modulation could be achieved. The experimental approach consists of irradiating the substrate surface with a laser interference pattern simultaneous with physical vapor deposition (PVD). To perform such film growth experiments, a vibration minimized and multifunctional ultra-high vacuum chamber was integrated with a Nd:YAG laser. The laser output is a beam of 266 nm with a coherence length of approximately 2 m and an area of ˜0.8 x 0.8 cm2. The laser has a pulse width of 9 ns, a constant repetition rate of 50 Hz, with a rated peak output of 44 mJ/pulse. The typical laser energy density used in this work was about 10 mJ/cm2. Since sub-micron length scales were of interest, vibration studies were performed by recording the interference patterns on kapton films. Results from the kapton films, measurements using a shear accelerometer and recent growth results showed that peak-to-peak vibration amplitudes on the substrate surface were less than +/-25 nm. Well-established PVD techniques like pulsed laser deposition

  17. Investigation on vanadium oxide thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Margoni, Mudaliar Mahesh; Mathuri, S.; Ramamurthi, K., E-mail: krmurthin@yahoo.co.in, E-mail: ramamurthi.k@ktr.srmuniv.ac.in [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur – 603 203, Kancheepuram Dt., Tamil Nadu (India); Babu, R. Ramesh [Crystal Growth and Thin Film Laboratory, School of Physics, Bharathidasan University, Tiruchirappalli – 620024, Tamil Nadu (India); Sethuraman, K. [School of Physics, Madurai Kamaraj University, Madurai – 625 021, Tamil Nadu (India)

    2016-05-06

    Vanadium oxide thin films were deposited at 400 °C by spray pyrolysis technique using 0.1 M aqueous precursor solution of ammonium meta vanadate (AMV) with two different pH values. X-ray diffraction results showed that the film prepared using aqueous precursor AMV solution (solution A; pH 7) is amorphous in nature and the film prepared by adding HNO{sub 3} in the AMV aqua solution A (solution B; pH 3) is polycrystalline in nature. Vanadium oxide film prepared from the precursor solution B is in the mixed phases of V{sub 2}O{sub 5} and V{sub 4}O{sub 7}. Crystallinity is improved for the film prepared using solution B when compared to film prepared from solution A. Crystallite size, strain and dislocation density calculated for the film prepared from solution B is respectively 72.1 nm, 0.4554 × 10{sup −3} lin.{sup −2}m{sup −4} and 1.7263 × 10{sup 14} lin.m{sup −2}. Morphology study revealed that the size of the flakes formed on the surface of the films is influenced by the pH of the precursor solution. Average Visible Transmittance and maximum transmittance of the deposited films exceed 70% and the direct optical band gap value calculated for the films deposited from A and B solution is 1.91 eV and 2.08 eV respectively.

  18. Thin multilayer CdS/ZnS films grown by SILAR technique

    Science.gov (United States)

    Valkonen, Mika P.; Lindroos, Seppo; Kanniainen, Tapio; Leskelä, Markku; Tapper, Unto; Kauppinen, Esko

    1997-11-01

    Multilayer ZnS/CdS thin films were grown on glass, ITO-covered glass and (100)GaAs substrates by successive ionic layer adsorption and reaction (SILAR) technique at room temperature and ambient pressure. The layers in multilayer thin film structures were nominally 1-6 nm thick and the amount of layers varied so that the total thickness of 100-120 nm was achieved. The films were polycrystalline according to X-ray diffraction analysis and scanning electron microscopy. The interfaces between the separate cadmium sulfide (CdS) and zinc sulfide (ZnS) layers were not sharp, but contained thin Cd xZn 1- xS solid solution layers. Annealing enhanced the mixing of the different layers and after 50 h at 300°C no separate CdS and ZnS X-ray reflections could be detected. About 20 nm thick layers could be detected as separate fields by scanning electron microscopy.

  19. XPS analysis and luminescence properties of thin films deposited by the pulsed laser deposition technique

    Science.gov (United States)

    Dolo, J. J.; Swart, H. C.; Coetsee, E.; Terblans, J. J.; Ntwaeaborwa, O. M.; Dejene, B. F.

    2010-04-01

    This paper presents the effect of substrate temperature and oxygen partial pressure on the photoluminescence (PL) intensity of the Gd2O2S:Tb3 + thin films that were grown by using pulsed laser deposition (PLD). The PL intensity increased with an increase in the oxygen partial pressure and substrate temperature. The thin film deposited at an oxygen pressure of 900 mTorr and substrate temperature of 900°C was found to be the best in terms of the PL intensity of the Gd2O2S:Tb3 + emission. The main emission peak due to the 5D4-7F5 transition of Tb was measured at a wavelength of 545 nm. The stability of these thin films under prolonged electron bombardment was tested with a combination of techniques such as X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and Cathodoluminescence (CL) spectroscopy. It was shown that the main reason for the degradation in luminescence intensity under electron bombardment is the formation of a non-luminescent Gd2O3 layer, with small amounts of Gd2S3, on the surface.

  20. Characterization of ITO/CdO/glass thin films evaporated by electron beam technique

    Directory of Open Access Journals (Sweden)

    Hussein Abdel-Hafez Mohamed and Hazem Mahmoud Ali

    2008-01-01

    Full Text Available A thin buffer layer of cadmium oxide (CdO was used to enhance the optical and electrical properties of indium tin oxide (ITO films prepared by an electron-beam evaporation technique. The effects of the thickness and heat treatment of the CdO layer on the structural, optical and electrical properties of ITO films were carried out. It was found that the CdO layer with a thickness of 25 nm results in an optimum transmittance of 70% in the visible region and an optimum resistivity of 5.1×10−3 Ω cm at room temperature. The effect of heat treatment on the CdO buffer layer with a thickness of 25 nm was considered to improve the optoelectronic properties of the formed ITO films. With increasing annealing temperature, the crystallinity of ITO films seemed to improve, enhancing some physical properties, such as film transmittance and conductivity. ITO films deposited onto a CdO buffer layer heated at 450 °C showed a maximum transmittance of 91% in the visible and near-infrared regions of the spectrum associated with the highest optical energy gap of 3.61 eV and electrical resistivity of 4.45×10−4 Ω cm at room temperature. Other optical parameters, such as refractive index, extinction coefficient, dielectric constant, dispersion energy, single effective oscillator energy, packing density and free carrier concentration, were also studied.

  1. Thinning identification technique using stainless steel film heater and response surface method

    Science.gov (United States)

    Ogasawara, Nagahisa; Yamada, Hiroyuki

    2011-05-01

    The infrared thermography has not been widely applied to nondestructive inspection for metals. It is because the metal emissivity is too low to be measured the temperature. To make up for this disadvantage, a new heating technique using a stainless steel film was proposed and a nondestructive inspection system with the response surface method was developed. The stainless film has a high electric resistance and generates large Joule heat. Its response is quick and the quantity of heat is easily controlled. Moreover, the film has a high enough thermal conductivity, therefore a black painted film can be a blackbody surface of metal structures. Consequently IR camera can easily measure the metal temperature accurately. The nondestructive inspection system that can quantitatively identify geometrical parameters of a local thinning was developed. The system consists of a forward analysis and an inverse analysis. In the forward analysis, the response surface that shows a relationship between geometrical parameters and characteristic values is built by experimental design method. In the inverse analysis, substituting the characteristic values into the response surface, the geometrical parameters are finally identified. The inspection system can identify the local thinning shape robustly by selecting the attribute for the shape parameters.

  2. NATO Advanced Research Workshop on Thin Film Growth Techniques for Low-Dimensional Structures

    CERN Document Server

    Parkin, S; Dobson, P; Neave, J; Arrott, A

    1987-01-01

    This work represents the account of a NATO Advanced Research Workshop on "Thin Film Growth Techniques for Low Dimensional Structures", held at the University of Sussex, Brighton, England from 15-19 Sept. 1986. The objective of the workshop was to review the problems of the growth and characterisation of thin semiconductor and metal layers. Recent advances in deposition techniques have made it possible to design new material which is based on ultra-thin layers and this is now posing challenges for scientists, technologists and engineers in the assessment and utilisation of such new material. Molecular beam epitaxy (MBE) has become well established as a method for growing thin single crystal layers of semiconductors. Until recently, MBE was confined to the growth of III-V compounds and alloys, but now it is being used for group IV semiconductors and II-VI compounds. Examples of such work are given in this volume. MBE has one major advantage over other crystal growth techniques in that the structure of the growi...

  3. Handbook of thin film technology

    CERN Document Server

    Frey, Hartmut

    2015-01-01

    “Handbook of Thin Film Technology” covers all aspects of coatings preparation, characterization and applications. Different deposition techniques based on vacuum and plasma processes are presented. Methods of surface and thin film analysis including coating thickness, structural, optical, electrical, mechanical and magnetic properties of films are detailed described. The several applications of thin coatings and a special chapter focusing on nanoparticle-based films can be found in this handbook. A complete reference for students and professionals interested in the science and technology of thin films.

  4. Thermal Conductivity Measurement of Submicron-Thick Aluminium Oxide Thin Films by a Transient Thermo-Reflectance Technique

    Institute of Scientific and Technical Information of China (English)

    BAI Su-Yuan; TANG Zhen-An; HUANG Zheng-Xing; YU Jun; WANG Jia-Qi

    2008-01-01

    Thermal conductivity of submicron-thick aluminium oxide thin films prepared by middle frequency magnetron sputtering is measured using a transient thermo-reflectance technique.A three-layer model based on transmission line theory and the gentic algorithm optimization method are employed to obtain the thermal conductivity of thin films and the interfacial thermal resistance.The results show that the average thermal conductivity of 3301000nm aluminium oxide thin films is 3.3Wm-1 K-1 at room temperature.No significant thickness dependence is found.The uncertainty of the measurement is less than 10%.

  5. Sensing CO gas with SnO{sub 2} thin films wetted with Cu prepared by sol-gel technique

    Energy Technology Data Exchange (ETDEWEB)

    Tirado G, S.; Cazares R, J. M. [Escuela Superior de Fisica y Matematicas, IPN, A. P. 75-544, 07300 Mexico D. F. (Mexico); Maldonado, A. [Departamento de Ingenieria Electrica, Centro de Investigacion y de Estudios Avanzados, IPN, A. P. 14-740, 07000 Mexico D. F. (Mexico)

    2009-10-15

    Pure and Cu surface deposited SnO{sub 2} thin films have been prepared on soda-lime substrate using the sol-gel technique. The sensing CO gas properties were investigated in 230 nm in thickness thin films. Pure thin films were wetted with several layers of Cu. The sensors were fabricated and proved at 0, 1, 5, 50, 100 and 200 ppm concentration CO gas and at 23, 100, 200 and 300 C working temperatures. The structural, morphology, electrical and optical properties of such thin films are reported. The route of 2-methoxyethanol and monoethanolamine was used. The resistance was high for all the samples. As was proposed, all the samples resulted enough amorphous and so the X-ray diffraction spectra show such structural state. the surface morphology for the samples was characterized by SEM and also by AFM techniques. (Author)

  6. Prism coupling technique investigation of elasto-optical properties of thin polymer films

    NARCIS (Netherlands)

    Ay, Feridun; Kocabas, Askin; Kocabas, Coskun; Aydinli, Atilla; Agan, Sedat

    2004-01-01

    The use of thin polymer films in optical planar integrated optical circuits is rapidly increasing. Much interest, therefore, has been devoted to characterizing the optical and mechanical properties of thin polymer films. This study focuses on measuring the elasto-optical properties of three differen

  7. Grazing Incidence Small Angle X-Ray Scattering: Technique and Application to Discontinuous Thin Films

    Science.gov (United States)

    Levine, Joanne Rachel

    1990-01-01

    During the early stages of thin film growth in many thin film-substrate systems, adsorbate atoms form discrete three-dimensional islands, typically 10 A to 150 A in size. In order to study these islands, surface sensitive small angle x-ray scattering has been done for the first time by using a grazing incidence geometry (GISAXS). In this method, the substrate is aligned for total external reflection and the islands produce small angle scattering from the refracted beam crossing the substrate surface. The motivation for developing the GISAXS technique is the advantages GISAXS offers. First, because GISAXS works in reflection, there are no substrate thickness restrictions. Second, there is no sample conductivity requirement. Third, there are no x-ray beam induced sample changes. Finally, the x-ray beam samples all of the islands in the beam path simultaneously. In order to examine thin films in situ with GISAXS, an ultra-high vacuum chamber has been built which can be attached to a rotating anode or synchrotron x-ray source. This chamber is equipped with a pair of beryllium windows, a metal evaporator, a sample heater, and a precision rotary sample holder feedthrough. The GISAXS technique was applied to a model system of gold islands on glass substrates. The glass provides high reflectivity and gold provides strong atomic number contrast. For as-deposited films from 5 A to 15 A in average thickness, average island sizes, heights, and preferred island spacings, and the island surface roughness were determined. From the results of low temperature (< 375^circK) post-deposition annealing experiments, a model was developed which explains the observed slow time-dependence of post-deposition island growth in terms of overlapping diffusion fields and mass transfer by island mobility. The activation energy for this process was determined to be 0.49 eV. These GISAXS results were supplemented with transmission electron micrographs of and grazing incidence wide angle x

  8. Development of a cell culture surface conversion technique using alginate thin film for evaluating effect upon cellular differentiation

    Energy Technology Data Exchange (ETDEWEB)

    Nakashima, Y., E-mail: yuta-n@mech.kumamoto-u.ac.jp [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 096-8555 (Japan); Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611 (Japan); Tsusu, K.; Minami, K. [Graduate School of Science and Engineering, Yamaguchi University, 2-16-1 Tokiwadai, Ube 755-8611 (Japan); Nakanishi, Y. [Graduate School of Science and Technology, Kumamoto University, 2-39-1 Kurokami, Chuo-ku, Kumamoto 096-8555 (Japan)

    2014-06-15

    Here, we sought to develop a cell culture surface conversion technique that would not damage living cells. An alginate thin film, formed on a glass plate by spin coating of sodium alginate solution and dipping into calcium chloride solution, was used to inhibit adhesion of cells. The film could be removed by ethylenediaminetetraacetate (EDTA) at any time during cell culture, permitting observation of cellular responses to conversion of the culture surface in real time. Additionally, we demonstrated the validity of the alginate thin film coating method and the performance of the film. The thickness of the alginate thin film was controlled by varying the rotation speed during spin coating. Moreover, the alginate thin film completely inhibited the adhesion of cultured cells to the culture surface, irrespective of the thickness of the film. When the alginate thin film was removed from the culture surface by EDTA, the cultured cells adhered to the culture surface, and their morphology changed. Finally, we achieved effective differentiation of C2C12 myoblasts into myotube cells by cell culture on the convertible culture surface, demonstrating the utility of our novel technique.

  9. Photocatalytic activity of cobalt-doped zinc oxide thin film prepared using the spray coating technique

    Science.gov (United States)

    Sutanto, Heri; Wibowo, Singgih; Hadiyanto; Arifin, Mohammad; Hidayanto, Eko

    2017-07-01

    We report on the synthesis, characterization and photocatalytic activity of ZnO: Co thin films coated onto amorphous glass substrates by sol-gel spray coating technique. Structural and optical properties of the films were evaluated using x-ray diffractometer (XRD) and uv-vis spectrophotometer (UV-Vis), respectively. XRD patterns showed that the samples exhibited hexagonal wurtzite structure. The addition of cobalt reduced the (0 0 2) peak. This doping also reduces transparency and optical band gap. The band gap (E g) markedly decreased from 3.20 eV to 3.00 eV for undoped ZnO and ZnO: Co with 10 mol% of doping concentration, respectively. Our thin films exhibited good structural, optical and photo cataytic properties. In this study, ZnO with 4 mol% of Co was observed to have the highest photocatalytic activity with methylene blue (MB) degradation of about 76.31% for 2 h under UV irradiation.

  10. Thin Film Formation of Gallium Nitride Using Plasma-Sputter Deposition Technique

    Directory of Open Access Journals (Sweden)

    R. Flauta

    2003-06-01

    Full Text Available The formation of gallium nitride (GaN thin film using plasma-sputter deposition technique has beenconfirmed. The GaN film deposited on a glass substrate at an optimum plasma condition has shown x-raydiffraction (XRD peaks at angles corresponding to that of (002 and (101 reflections of GaN. The remainingmaterial on the sputtering target exhibited XRD reflections corresponding to that of bulk GaN powder. Toimprove the system’s base pressure, a new UHV compatible system is being developed to minimize theimpurities in residual gases during deposition. The sputtering target configuration was altered to allow themonitoring of target temperature using a molybdenum (Mo holder, which is more stable against Gaamalgam formation than stainless steel.

  11. Elasto-Optical Properties of Thin Polymer Films by Prism Coupling Technique

    Science.gov (United States)

    Ay, Feridun; Agan, Sedat; Kocabas, Askin; Aydinli, Atilla

    2004-05-01

    Reliable measurement of stress dependent refractive index of thin polymer films has been achieved. The effect of the applied stress on the refractive index and birefringence of the films was investigated. The out-of-plane elastic moduli of the thin polymer films were deduced by using the same prism coupling setup. Three dimensional finite element method (FEM) analysis was used to obtain the principal stresses for each polymer film and combining them with the stress dependent refractive index measurements, the elasto-optic coefficients of the polymer films were determined, for the first time.

  12. Study of indium tin oxide thin films deposited on acrylics substrates by Ion beam assisted deposition technique

    OpenAIRE

    Meng Lijian; Liang Erjun; Gao Jinsong; Teixeira, Vasco M. P.; Santos, M. P. dos

    2009-01-01

    Indium tin oxide (ITO) thin films have been deposited onto acrylics (PMMA) substrates by ion beam assisted deposition technique at different oxygen flows. The structural, optical and electrical properties of the deposited films have been characterized by X-ray diffraction, transmittance, FTIR, ellipometry and Hall effect measurements. The optical constants of the deposited films have been calculated by fitting the ellipsometric spectra. The effects of the oxygen flow on the properties of the ...

  13. Properties of Te-rich cadmium telluride thin films fabricated by closed space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Ali, Z.; Maqsood, A.; Aqili, A. K. S.

    2005-11-01

    Cadmium telluride (CdTe) thin films were prepared by the closed space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the same procedure was adopted by using tellurium as evaporant and already deposited CdTe film as substrate. Such compositions were then annealed at 300 °C for 30 min to obtain Te-enriched films. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), spectrophotometry, DC electrical resistivity, dark conductivity and activation energy analysis as a function of temperature by two-probe method. The electron microprobe analyzer (EMPA) results showed an increase of Te content composition in the samples as the mass of the Te-deposition increased in CdTe. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by addition of tellurium. A significant change in the shape and size of the CdTe grains were observed.

  14. Photoluminescence and photoelectrochemical properties of nanocrystalline ZnO thin films synthesized by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Tarwal, N.L.; Shinde, V.V.; Kamble, A.S.; Jadhav, P.R.; Patil, D.S.; Patil, V.B. [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra (India); Patil, P.S., E-mail: psp_phy@unishivaji.ac.in [Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra (India)

    2011-10-01

    A simple and inexpensive spray pyrolysis technique (SPT) was employed for the synthesis of nanocrystalline zinc oxide (ZnO) thin films onto soda lime glass and tin doped indium oxide (ITO) coated glass substrates at different substrate temperatures ranging from 300 deg. C to 500 deg. C. The synthesized films were polycrystalline, with a (0 0 2) preferential growth along c-axis. SEM micrographs revealed the uniform distribution of spherical grains of about 80-90 nm size. The films were transparent with average visible transmittance of 85% having band gap energy 3.25 eV. All the samples exhibit room temperature photoluminescence (PL). A strong ultraviolet (UV) emission at 398 nm with weak green emission centered at 520 nm confirmed the less defect density in the samples. Moreover, the samples are photoelectrochemically active and exhibit the highest photocurrent of 60 {mu}A, a photovoltage of 280 mV and 0.23 fill factor (FF) for the Zn{sub 450} films in 0.5 M Na{sub 2}SO{sub 4} electrolyte, when illuminated under UV light.

  15. Comparison and semiconductor properties of nitrogen doped carbon thin films grown by different techniques

    Energy Technology Data Exchange (ETDEWEB)

    Alibart, F.; Drouhin, O. Durand [Laboratoire e Physique de la Matiere Condensee, 33 rue Saint Leu, 80000 Amiens (France); Benlahsen, M. [Laboratoire e Physique de la Matiere Condensee, 33 rue Saint Leu, 80000 Amiens (France)], E-mail: mohamed.benlahsen@sc.u-picardie.fr; Muhl, S.; Rodil, S. Elizabeth [Instituo de Investigationes en Materials, Universidad National Autonomia de Mexico, Mexico, D.F. 04510 (Mexico); Camps, E.; Escobar-Alarcon, L. [Instituo National de Investigationes Nucleares, Apdo. Postal 18-1027, Mexico, D.F. 11801 (Mexico)

    2008-06-30

    Amorphous carbon nitride (a-CN{sub x}) thin films have been synthesised by three different deposition techniques in an Ar/N{sub 2} gas mixture and have been deposited by varying the percentage of nitrogen gas in the mixture (i.e. the N{sub 2}/Ar + N{sub 2} ratio) from 0 to 10%. The variation of the electrical conductivity and the gap values of the deposited films versus the N{sub 2}/Ar + N{sub 2} ratio were investigated in relation with their local microstructure. Film composition was analysed using Raman spectroscopy and optical transmission experiments. The observed variation of electrical conductivity and optical properties are attributed to the changes in the atomic bonding structures, which were induced by N incorporation, increasing both the sp{sup 2} carbon content and their relative disorder. The low N content samples seem to be an interesting material to produce films with interesting properties for optoelectronic applications considering the facility to control the gas composition as a key parameter.

  16. Novel infrared spectroscopic techniques for the study of adsorbed proteins on photoactive thin films

    Science.gov (United States)

    Angle, Taylor Allan

    Through the development of attenuated total reflection (ATR) Fourier transform infrared (FTIR) spectroscopic techniques, as well as biocompatible nanoporous gold film confining layers and photoactive nanocrystal cadmium telluride (CdTe) thin films, a system capable of in situ study of adsorbed protein films on photoactive layers was created. Due to the oxygen intolerance of the enzyme of interest for this work (a [FeFe]-hydrogenase from Clostridium acetobutylicum), techniques were developed in a manner conducive to anaerobic environments. Solid-state ligand exchange processes were shown to have no detrimental effect on the continued ability of nanocrystal CdTe layers to reduce species via the transfer of photogenerated electrons. Nanoporous gold films were shown to effectively confine poorly bound surface species including nanocrystal CdTe layers and adsorbed protein films. An ATR "stack'' structure, consisting of a silicon wafer coupled to a zinc selenide ATR crystal by a high index optical coupling fluid, was designed and implemented, leading to a tunable optical structure for use with existing ATR setups. This ATR stack was shown to maintain resolution and signal intensity of traditional ATR configurations for both aqueous and solid-state samples. Through the use of coupled silicon wafers, we significantly increased both sample throughput and the number of available chemical processes by replacing the expensive ATR crystals as the default sample substrate. Shown herein to function as initially intended, these novel methods provide the groundwork for more complex experiments, such as an in situ monitoring of the photooxidation of surface-bound hydrogenases.

  17. Techniques for Achieving Zero Stress in Thin Films of Iridium, Chromium, and Nickel

    Science.gov (United States)

    Broadway, David M.; O'Dell, Stephen L.; Ramsey, Brian D.; Weimer, Jeffrey

    2015-01-01

    We examine techniques for achieving zero intrinsic stress in thin films of iridium, chromium, and nickel deposited by magnetron sputter deposition. The intrinsic stress is further correlated to the microstructural features and physical properties such as surface roughness and optical density at a scale appropriate to soft X-ray wavelengths. The examination of the stress in these materials is motivated by efforts to advance the optical performance of light-weight X-ray space telescopes into the regime of sub-arcsecond resolution through various deposition techniques that rely on control of the film stress to values within 10-100 MPa. A characteristic feature of the intrinsic stress behavior in chromium and nickel is their sensitivity to the magnitude and sign of the intrinsic stress with argon gas pressure and deposition rate, including the existence of a critical argon process pressure that results in zero film stress which scales linearly with the atomic mass of the sputtered species. While the effect of stress reversal with argon pressure has been previously reported by Hoffman and others for nickel and chromium, we report this effect for iridium. In addition to stress reversal, we identify zero stress in the optical functioning iridium layer shortly after island coalescence for low process pressures at a film thickness of approximately 35nm. The measurement of the low values of stress during deposition was achieved with the aid of a sensitive in-situ instrument capable of a minimum detectable level of stress, assuming a 35nm thick film, in the range of 0.40-6.0 MPa for oriented crystalline silicon substrate thicknesses of 70-280 microns, respectively.

  18. Polycrystalline BiFeO3 thin film synthesized via sol-gel assisted spin coating technique for photosensitive application

    Science.gov (United States)

    Bogle, K. A.; Narwade, R. D.; Phatangare, A. B.; Dahiwale, S. S.; Mahabole, M. P.; Khairnar, R. S.

    2016-05-01

    We are reporting photosensitivity property of BiFeO3 thin film under optical illumination. The thin film used for photosensitivity work was fabricated via sol-gel assisted spin coating technique. I-V measurements on the Cu/BiFeO3/Al structure under dark condition show a good rectifying property and show dramatic blue shit in threshold voltage under optical illumination. The microstructure, morphology and elemental analysis of the films were characterized by using XRD, UV-Vis, FTIR, SEM and EDS.

  19. Characterization of ZnO:SnO2 (50:50) thin film deposited by RF magnetron sputtering technique

    Science.gov (United States)

    Cynthia, S. R.; Sivakumar, R.; Sanjeeviraja, C.; Ponmudi, S.

    2016-05-01

    Zinc oxide (ZnO) and tin oxide (SnO2) thin films have attracted significant interest recently for use in optoelectronic application such as solar cells, flat panel displays, photonic devices, laser diodes and gas sensors because of their desirable electrical and optical properties and wide band gap. In the present study, thin films of ZnO:SnO2 (50:50) were deposited on pre-cleaned microscopic glass substrate by RF magnetron sputtering technique. The substrate temperature and RF power induced changes in structural, surface morphological, compositional and optical properties of the films have been studied.

  20. Effects of Ni doping on photocatalytic activity of TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; K R Gunashekar

    2008-10-01

    The TiO2 thin films doped by Ni uniformly and non-uniformly were prepared on glass substrate from an aqueous solution of ammonium hexa-fluoro titanate and NiF2 by liquid phase deposition technique. The addition of boric acid as an – scavenger will shift the equilibrium to one side and thereby deposition of the film is progressed. The rate of the reaction and the nature of deposition depend on growing time and temperature. The resultant films were characterized by XRD, EDAX, UV and SEM. The result shows that the deposited films have amorphous background, which becomes crystalline at 500°C. The EDAX data confirms the existence of Ni atoms in TiO2 matrix. XRD analysis reveals the peaks corresponding to Ni but no peak of crystalline NiO was found. The transmittance spectra of Ni uniformly and non-uniformly doped TiO2 thin films show `blue shift and red shift’, respectively. Ni-doped TiO2 thin films can be used as photocatalyst for the photodegradation of methyl orange dye. It was found that, organic dye undergoes degradation efficiently in presence of non-uniformly Ni-doped TiO2 thin films when compared to uniformly doped films and pure TiO2 films under visible light. The photocatalytic activity increases with increase in the concentration of Ni in case of nonuniformly doped thin films but decreases with the concentration when uniformly doped thin films were used.

  1. Electrical characterization of grain boundaries of CZTS thin films using conductive atomic force microscopy techniques

    Energy Technology Data Exchange (ETDEWEB)

    Muhunthan, N.; Singh, Om Pal [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India); Toutam, Vijaykumar, E-mail: toutamvk@nplindia.org [Quantum Phenomena and Applications Division, CSIR-National Physical Laboratory, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Singh, V.N., E-mail: singhvn@nplindia.org [Compound Semiconductor Solar Cell, Physics of Energy Harvesting Division, New Delhi 110012 (India)

    2015-10-15

    Graphical abstract: Experimental setup for conducting AFM (C-AFM). - Highlights: • Cu{sub 2}ZnSnS{sub 4} (CZTS) thin film was grown by reactive co-sputtering. • The electronic properties were probed using conducting atomic force microscope, scanning Kelvin probe microscopy and scanning capacitance microscopy. • C-AFM current flow mainly through grain boundaries rather than grain interiors. • SKPM indicated higher potential along the GBs compared to grain interiors. • The SCM explains that charge separation takes place at the interface of grain and grain boundary. - Abstract: Electrical characterization of grain boundaries (GB) of Cu-deficient CZTS (Copper Zinc Tin Sulfide) thin films was done using atomic force microscopic (AFM) techniques like Conductive atomic force microscopy (CAFM), Kelvin probe force microscopy (KPFM) and scanning capacitance microscopy (SCM). Absorbance spectroscopy was done for optical band gap calculations and Raman, XRD and EDS for structural and compositional characterization. Hall measurements were done for estimation of carrier mobility. CAFM and KPFM measurements showed that the currents flow mainly through grain boundaries (GB) rather than grain interiors. SCM results showed that charge separation mainly occurs at the interface of grain and grain boundaries and not all along the grain boundaries.

  2. Thin films and coatings deposited by vacuum techniques; Capas delgadas y recubrimientos obtenidos mediante tecnicas de vacio

    Energy Technology Data Exchange (ETDEWEB)

    Albella, J. M.; Endrino, J. L.

    2010-07-01

    This paper gives an overview of the various aspects associated with the development of coatings and thin films in all its aspects, from the preparation techniques to the technological applications. It addresses such important issues, such as the comparison of some techniques with others, or the choice of a deposition method to achieve certain characteristics in the deposited layer. (Author) 8 refs.

  3. Low power optical limiting studies on nanocrystalline benzimidazole thin films prepared by modified liquid phase growth technique

    Indian Academy of Sciences (India)

    P A Praveen; S P Prabhakaran; R Ramesh Babu; K Sethuraman; K Ramamurthi

    2015-06-01

    In the present work, benzimidazole (BMZ), a well known nonlinear optical material, thin films were deposited using the modified liquid phase growth technique at different solution temperatures. The prepared samples were subjected to spectral, structural and surface analyses. Linear optical properties and third-order optical nonlinearity of the deposited BMZ thin films were analysed using UV–visible–NIR spectrum and -scan technique, respectively. The experimental results show that the BMZ films exhibit reverse saturable absorption and positive nonlinearity at 650 nm CW laser of power 5 mW. The measured third-order nonlinear susceptibility of the films is about 10−10 esu. Optical limiting studies were performed using the same laser source and the potentiality of the BMZ films is reported.

  4. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Energy Technology Data Exchange (ETDEWEB)

    Perrone, A., E-mail: alessio.perrone@unisalento.it [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Gontad, F. [INFN-Istituto Nazionale di Fisica Nucleare e Università del Salento, 73100 Lecce (Italy); Lorusso, A.; Di Giulio, M. [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden); Ferrario, M. [Laboratori Nazionali di Frascati, Istituto Nazionale di Fisica Nucleare, 00044 Frascati (Italy)

    2013-11-21

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ–2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10{sup −5}) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed. -- Highlights: •Comparison of Pb thin films deposited on Nb substrate by thermal evaporation and pulsed laser deposition (PLD). •Photoelectron performances of Pb thin films. •Good quality of adhesion strength of Pb films deposited by PLD.

  5. Pyrolyzed thin film carbon

    Science.gov (United States)

    Tai, Yu-Chong (Inventor); Liger, Matthieu (Inventor); Harder, Theodore (Inventor); Konishi, Satoshi (Inventor); Miserendino, Scott (Inventor)

    2010-01-01

    A method of making carbon thin films comprises depositing a catalyst on a substrate, depositing a hydrocarbon in contact with the catalyst and pyrolyzing the hydrocarbon. A method of controlling a carbon thin film density comprises etching a cavity into a substrate, depositing a hydrocarbon into the cavity, and pyrolyzing the hydrocarbon while in the cavity to form a carbon thin film. Controlling a carbon thin film density is achieved by changing the volume of the cavity. Methods of making carbon containing patterned structures are also provided. Carbon thin films and carbon containing patterned structures can be used in NEMS, MEMS, liquid chromatography, and sensor devices.

  6. CdS thin films obtained by thermal treatment of cadmium(II) complex precursor deposited by MAPLE technique

    Energy Technology Data Exchange (ETDEWEB)

    Rotaru, Andrei [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Mietlarek-Kropidlowska, Anna [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Constantinescu, Catalin, E-mail: catalin.constantinescu@inflpr.ro [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Scarisoreanu, Nicu; Dumitru, Marius [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Strankowski, Michal [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Rotaru, Petre [University of Craiova, Faculty of Physics, 13 A.I. Cuza St., Craiova RO-200585, Dolj (Romania); Ion, Valentin [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Vasiliu, Cristina [INOE 2000 - National Institute for Optoelectronics, 1 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania); Becker, Barbara [Gdansk University of Technology, Chemistry Faculty, 11/12 G. Narutowicza Str., PL-90-233 Gdansk (Poland); Dinescu, Maria [INFLPR - National Institute for Laser, Plasma and Radiation Physics, PPAM - Lasers Department, 409 Atomistilor Bvd., Magurele RO-077125, Bucharest (Romania)

    2009-05-15

    Thin films of [Cd{l_brace}SSi(O-Bu{sup t}){sub 3}{r_brace}(S{sub 2}CNEt{sub 2})]{sub 2}, precursor for semiconducting CdS layers, were deposited on silicon substrates by Matrix-Assisted Pulsed Laser Evaporation (MAPLE) technique. Structural analysis of the obtained films by Fourier transform infrared spectroscopy (FTIR) confirmed the viability of the procedure. After the deposition of the coordination complex, the layers are manufactured by appropriate thermal treatment of the system (thin film and substrate), according to the thermal analysis of the compound. Surface morphology of the thin films was investigated by atomic force microscopy (AFM) and spectroscopic-ellipsometry (SE) measurements.

  7. Handbook of thin film deposition processes and techniques principles, methods, equipment and applications

    CERN Document Server

    Seshan, Krishna

    2002-01-01

    New second edition of the popular book on deposition (first edition by Klaus Schruegraf) for engineers, technicians, and plant personnel in the semiconductor and related industries. This book traces the technology behind the spectacular growth in the silicon semiconductor industry and the continued trend in miniaturization over the last 20 years. This growth has been fueled in large part by improved thin film deposition techniques and the development of highly specialized equipment to enable this deposition. The book includes much cutting-edge material. Entirely new chapters on contamination and contamination control describe the basics and the issues-as feature sizes shrink to sub-micron dimensions, cleanliness and particle elimination has to keep pace. A new chapter on metrology explains the growth of sophisticated, automatic tools capable of measuring thickness and spacing of sub-micron dimensions. The book also covers PVD, laser and e-beam assisted deposition, MBE, and ion beam methods to bring together a...

  8. Phase transition of TiO{sub 2} thin films detected by the pulsed laser photoacoustic technique

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Pacheco, A.; Castaneda-Guzman, R.; Oliva Montes de Oca, C.; Esparza-Garcia, A. [Universidad Nacional Autonoma de Mexico, CCADET-UNAM, Laboratorio de Fotofisica y Peliculas Delgadas, Cd. Universitaria, A.P. 70-186, Mexico D.F. (Mexico); Perez Ruiz, S.J. [CCADET-UNAM, Acustica y Vibraciones, Mexico D.F. (Mexico)

    2011-03-15

    In this work, we present characterization of titanium oxide thin films by photoacoustic measurements to determine the ablation threshold and phase transitions from amorphous to crystalline states. The important advantages of this method are that it does not require amplification at the detection stage and that it is a non-destructive technique. The correlation analysis of the photoacoustic signals allows us to visualize the ablation threshold and the phase transitions with enhanced sensitivity. This correlation analysis clearly exhibits the changes in the thin-film morphology due to controlled variations of the fluence (energy/area) and the temperature of the surrounding medium. This is particularly important for those cases where the crystalline changes caused by temperature variations need to be monitored. The thin-film samples were prepared by the sputtering technique at room temperature in the amorphous state. The phase transformations were induced by controlled temperature scanning and then corroborated with Raman spectroscopy measurements. (orig.)

  9. Thin film growth and Zn doping of h-MoO3 hexagonal rods by hydrothermal technique

    Science.gov (United States)

    Mousavi-Zadeh, Seyyed Hamid; Rahmani, Mohammad Bagher

    2016-12-01

    In this research, rod-like undoped and Zn doped h-MoO3 thin films were grown on top of MoO3 seed layers, using hydrothermal technique without adding any surfactant. Seed layers of MoO3 were coated on top of glass substrates using spray pyrolysis technique. Structural, morphological and optical properties of thin films were examined. XRD pattern analysis showed that the seed layer has orthorhombic crystal structure. Also, it confirms the formation of hexagonal structure for thin films grown by hydrothermal. FESEM images show the formation of long, well-shaped hexagonal rod-likes. UV-Vis spectroscopy reveals band gap increasing from 3.2 eV to 3.54 eV, by increasing Zn.

  10. Host thin films incorporating nanoparticles

    Science.gov (United States)

    Qureshi, Uzma

    The focus of this research project was the investigation of the functional properties of thin films that incorporate a secondary nanoparticulate phase. In particular to assess if the secondary nanoparticulate material enhanced a functional property of the coating on glass. In order to achieve this, new thin film deposition methods were developed, namely use of nanopowder precursors, an aerosol assisted transport technique and an aerosol into atmospheric pressure chemical vapour deposition system. Aerosol assisted chemical vapour deposition (AACVD) was used to deposit 8 series of thin films on glass. Five different nanoparticles silver, gold, ceria, tungsten oxide and zinc oxide were tested and shown to successfully deposit thin films incorporating nanoparticles within a host matrix. Silver nanoparticles were synthesised and doped within a titania film by AACVD. This improved solar control properties. A unique aerosol assisted chemical vapour deposition (AACVD) into atmospheric pressure chemical vapour deposition (APCVD) system was used to deposit films of Au nanoparticles and thin films of gold nanoparticles incorporated within a host titania matrix. Incorporation of high refractive index contrast metal oxide particles within a host film altered the film colour. The key goal was to test the potential of nanopowder forms and transfer the suspended nanopowder via an aerosol to a substrate in order to deposit a thin film. Discrete tungsten oxide nanoparticles or ceria nanoparticles within a titanium dioxide thin film enhanced the self-cleaning and photo-induced super-hydrophilicity. The nanopowder precursor study was extended by deposition of zinc oxide thin films incorporating Au nanoparticles and also ZnO films deposited from a ZnO nanopowder precursor. Incorporation of Au nanoparticles within a VO: host matrix improved the thermochromic response, optical and colour properties. Composite VC/TiC and Au nanoparticle/V02/Ti02 thin films displayed three useful

  11. Realizing near stoichiometric and highly transparent CdS:Mo thin films by a low-cost improved SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Ravichandran, K. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613503, Tamil Nadu (India); Nisha Banu, N. [P.G. and Research Department of Physics, AVVM Sri Pushpam College (Autonomous), Poondi, Thanjavur 613503, Tamil Nadu (India); Research Department of Physics, Kunthavai Naachiyaar Government Arts College for Women (Autonomous), Thanjavur 613007, Tamil Nadu (India); Baneto, M. [CUER-UL, Universite de Lome, BP 1515, Lome (Togo); Senthamil Selvi, V. [Research Department of Physics, Kunthavai Naachiyaar Government Arts College for Women (Autonomous), Thanjavur 613007, Tamil Nadu (India)

    2016-02-15

    Undoped and molybdenum doped CdS thin films were deposited on glass substrates using Improved Successive Ionic Layer Adsorption and Reaction (ISILAR) technique. The Mo doping level was varied from 0 to 15 at.% in steps of 5 at.%. The XRD analysis shows that all the films are polycrystalline with cubic structure and grow preferentially along the (111) plane. The crystallite size increases gradually with the increase in Mo doping level up to 10 at.% and decreases with further doping. The morphological studies reveal that Mo doping significantly affects the grains size. Qualitative and quantitative compositional analysis show that near stoichiometric undoped and Mo doped CdS thin films can be achieved using this ISILAR technique. All the films exhibit high transparency in the visible region with an average transmittance in the range of 85-95%. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Paloly, Abdul Rasheed; Satheesh, M. [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, c/Dr Moliner 50, Burjassot, Valencia 46100 (Spain); Rajappan Achary, Sreekumar [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India); Bushiri, M. Junaid, E-mail: junaidbushiri@gmail.com [Nano Functional Materials Lab, Department of Physics, Cochin University of Science and Technology, Kochi 682022, Kerala (India)

    2015-12-01

    Highlights: • SnO{sub 2} thin films were grown on hydrophilic and hydrophobic glass substrates. • Samples on hydrophobic substrates are having comparatively larger lattice volume. • Films on hydrophobic substrates have larger particles and low density distribution. • Substrate dependent photoluminescence emission is observed and studied. • SnO{sub 2} thin films grown over hydrophobic substrates may find potential applications. - Abstract: In this paper, we have demonstrated the growth of tin oxide (SnO{sub 2}) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO{sub 2} thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3–4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11–20 nm. Surface morphology of SnO{sub 2} films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO{sub 2} thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  13. Comparison of the properties of Pb thin films deposited on Nb substrate using thermal evaporation and pulsed laser deposition techniques

    Science.gov (United States)

    Perrone, A.; Gontad, F.; Lorusso, A.; Di Giulio, M.; Broitman, E.; Ferrario, M.

    2013-11-01

    Pb thin films were prepared at room temperature and in high vacuum by thermal evaporation and pulsed laser deposition techniques. Films deposited by both the techniques were investigated by scanning electron microscopy to determine their surface topology. The structure of the films was studied by X-ray diffraction in θ-2θ geometry. The photoelectron performances in terms of quantum efficiency were deduced by a high vacuum photodiode cell before and after laser cleaning procedures. Relatively high quantum efficiency (>10-5) was obtained for all the deposited films, comparable to that of corresponding bulk. Finally, film to substrate adhesion was also evaluated using the Daimler-Benz Rockwell-C adhesion test method. Weak and strong points of these two competitive techniques are illustrated and discussed.

  14. Gd doping effect on structural, electrical and magnetic properties of ZnO thin films synthesized by sol-gel spin coating technique

    Science.gov (United States)

    Kumar, Sanjeev; Thangavel, Rajalingam

    2017-03-01

    Nanocrystalline Gd-doped ZnO thin films were deposited on sapphire (0001) substrates using sol-gel spin coating technique. The structural and optical properties of deposited thin films were characterized by X-ray diffraction (XRD) and micro Raman spectroscopy. Structural and optical studies show that the doped Gd ions occupy Zn sites retaining the wurtzite symmetry. Photoluminescence (PL) studies reveal the presence of oxygen vacancies in Gd doped ZnO thin films. The resistivity of Gd doped ZnO thin film decreases with increase in Gd doping upto 4%. Gd-doped ZnO films demonstrate weak magnetic ordering at room temperature.

  15. The Characteristics of an Antibacterial TiAgN Thin Film Coated by Physical Vapor Deposition Technique.

    Science.gov (United States)

    Kang, Byeong-Mo; Jeong, Woon-Jo; Park, Gye-Choon; Yoon, Dong-Joo; Ahn, Ho-Geun; Lim, Yeong-Seog

    2015-08-01

    In this work, we found the characteristics of an antibacterial TiAgN thin film coated on the pure titanium specimen via the physical vapor deposition process (PVD). TiAgN thin films were coated using TiAg alloy targets by arc ion plating method. Changing the process parameters, the surface analysis of TiAgN thin film was observed by FE-SEM and the force of adhesion was measured with Scratch Tester. The proliferation of human gingival fibroblast (HGF) cells was examined by XTT test assay and the antibacterial properties were investigated by culturing Streptococus Mutans (KCTC 3065) using paper disk techniques. At the result of experiment, cytotoxic effects were not found and the antibacterial effects against Streptococus Mutans were appeared over 5 wt% TiAgN specimens.

  16. Nanocrystalline biphasic resorbable calcium phosphate (HAp/β-TCP) thin film prepared by electron beam evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Elayaraja, K.; Chandra, V. Sarath; Joshy, M.I. Ahymah; Suganthi, R.V. [Crystal Growth Centre, Anna University, Chennai 600025, Tamil Nadu (India); Asokan, K. [Inter-University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India); Kalkura, S. Narayana, E-mail: kalkura@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600025, Tamil Nadu (India)

    2013-06-01

    Biphasic calcium phosphate (BCP) thin film having resorbable β-tricalcium phosphate (β-TCP) and non-resorbable hydroxyapatite (HAp) phases having enhanced bioactivity was synthesized by electron beam evaporation technique. Nanosized BCP was deposited as a layer (500 nm) on (0 0 1) silicon substrate by electron beam evaporation and crystalline phase of samples were found to improve on annealing at 700 °C. Uniform deposition of calcium phosphate on silicon substrate was verified from elemental mapping using scanning electron microscope (SEM-EDX). Annealing of the samples led to a decrease in surface roughness, hydrophobicity and dissolution of the coating layer. Amoxicillin loaded thin films exhibited significant bacterial resistance. In addition, BCP thin films did not exhibit any cytotoxicity. Antibiotics incorporated BCP coated implants might prevent the post-surgical infections and could promote bone-bonding of orthopedic devices.

  17. Chalcogenide-based thin film sensors prepared by pulsed laser deposition technique

    Science.gov (United States)

    Schubert, J.; Schöning, M. J.; Schmidt, C.; Siegert, M.; Mesters, St.; Zander, W.; Kordos, P.; Lüth, H.; Legin, A.; Mourzina, Yu. G.; Seleznev, B.; Vlasov, Yu. G.

    One advantage of the pulsed laser deposition (PLD) method is the stoichiometric transfer of multi-component target material to a given substrate. This advantage of the PLD determined the choice to prepare chalco-genide-based thin films with an off-axis geometry PLD. Ag-As-S and Cu-Ag-As-Se-Tetargets were used to deposit thin films on Si substrates for an application as a heavy metal sensing device. The films were characterized by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and electrochemical measurements. The same stoichiometry of the films and the targets was confirmed by RBS measurements. We observed a good long-term stability of more than 60 days and a nearly Nernstian sensitivity towards Pb and Cu, which is comparable to bulk sensors.

  18. Uniaxial magnetic anisotropy of cobalt thin films on different substrates using CW-MOKE technique

    Energy Technology Data Exchange (ETDEWEB)

    Shukla, Vijay, E-mail: shuklavs@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Mukherjee, C. [Mechanical and Optical Support Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Chari, R. [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Rai, S. [Indus Synchrotron Utilization Division, Raja Ramnna Centre for Advanced Technology, Indore 452013 (India); Bindra, K.S. [Solid State Laser Division, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India); Banerjee, A. [BARC training school at RRCAT and Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2014-12-15

    Cobalt thin films were deposited on GaAs, Si and Glass substrates by RF-magnetron sputtering. The structure was studied using atomic force microscopy, X-ray reflectivity and grazing incidence X-ray diffraction. Magnetic properties were determined with the magneto-optic Kerr effect. The deposited films have in-plane uniaxial anisotropy and after annealing the anisotropy reduces. The reduction in anisotropy may be due to release of stress and the remaining anisotropy after annealing may be due to shape anisotropy of the particulates. - Highlights: • Deposited cobalt thin films on different substrates and annealed at 300 °C. • Characterized as-grown and annealed films by GIXRD, AFM and MOKE. • Uniaxial magnetic anisotropy observed for all the samples. • Decrease in anisotropy on annealing may be due to release of stress during deposition.

  19. Thin Film Analysis by X-Ray Scattering Techniques for Structural Characterization

    CERN Document Server

    Birkholz, Mario

    2005-01-01

    With contributions by Paul F. Fewster and Christoph Genzel. While X-ray diffraction investigation of powders and polycrystalline matter was at the forefront of materials science in the 1960s and 70s, high-tech applications at the beginning of the 21st century are driven by the materials science of thin films. Very much an interdisciplinary field, chemists, biochemists, materials scientists, physicists and engineers all have a common interest in thin films and their manifold uses and applications. Grain size, porosity, density, preferred orientation and other properties are important to know: w

  20. Thin film interconnect processes

    Science.gov (United States)

    Malik, Farid

    Interconnects and associated photolithography and etching processes play a dominant role in the feature shrinkage of electronic devices. Most interconnects are fabricated by use of thin film processing techniques. Planarization of dielectrics and novel metal deposition methods are the focus of current investigations. Spin-on glass, polyimides, etch-back, bias-sputtered quartz, and plasma-enhanced conformal films are being used to obtain planarized dielectrics over which metal films can be reliably deposited. Recent trends have been towards chemical vapor depositions of metals and refractory metal silicides. Interconnects of the future will be used in conjunction with planarized dielectric layers. Reliability of devices will depend to a large extent on the quality of the interconnects.

  1. Growth of tin oxide thin films composed of nanoparticles on hydrophilic and hydrophobic glass substrates by spray pyrolysis technique

    Science.gov (United States)

    Paloly, Abdul Rasheed; Satheesh, M.; Martínez-Tomás, M. Carmen; Muñoz-Sanjosé, Vicente; Rajappan Achary, Sreekumar; Bushiri, M. Junaid

    2015-12-01

    In this paper, we have demonstrated the growth of tin oxide (SnO2) thin films composed of nanoparticles on hydrophobic (siliconized) and hydrophilic (non-siliconized) glass substrates by using the spray pyrolysis technique. X-ray diffraction (XRD) analysis confirmed the formation of SnO2 thin films with tetragonal rutile-phase structure. Average particle size of nanoparticles was determined to be in the range of 3-4 nm measured from the front view images obtained by a field emission gun scanning electron microscope (FESEM), while the size of nanoparticle clusters, when present, were in the range of 11-20 nm. Surface morphology of SnO2 films grown over hydrophobic substrates revealed larger isolated particles which are less crowded compared to the highly crowded and agglomerated smaller particles in films on hydrophilic substrates. Blue shift in the band gap is observed in samples in which the average particle size is slightly larger than the exciton Bohr radius. Photoluminescence (PL) analysis of samples grown over hydrophobic substrates exhibited an intense defect level emission and a weak near band edge emission. The enhanced visible emission from these SnO2 thin films is attributed to lattice defects formed during the film growth due to the mismatch between the film and the hydrophobic substrate surface.

  2. Wet chemical synthesis of quantum confined nanostructured tin oxide thin films by successive ionic layer adsorption and reaction technique

    Energy Technology Data Exchange (ETDEWEB)

    Murali, K.V., E-mail: kvmuralikv@gmail.com [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Ragina, A.J. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Nehru Arts and Science College, Kanhangad, Kerala 671314 (India); Preetha, K.C. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Sree Narayana College, Kannur, Kerala 670007 (India); Deepa, K.; Remadevi, T.L. [School of Pure and Applied Physics, Department of Physics, Kannur University, Kerala 670327 (India); Department of Physics, Pazhassi Raja N.S.S. College, Mattannur, Kerala 670702 (India)

    2013-09-01

    Graphical abstract: - Highlights: • Quantum confined SnO{sub 2} thin films were synthesized at 80 °C by SILAR technique. • Film formation mechanism is discussed. • Films with snow like crystallite morphology offer high specific surface area. • The blue-shifted value of band gap confirmed the quantum confinement effect. • Present synthesis has advantages – low cost, low temperature and green friendly. - Abstract: Quantum confined nanostructured SnO{sub 2} thin films were synthesized at 353 K using ammonium chloride (NH{sub 4}Cl) and other chemicals by successive ionic layer adsorption and reaction technique. Film formation mechanism is discussed. Structural, morphological, optical and electrical properties were investigated and compared with the as-grown and annealed films fabricated without NH{sub 4}Cl solution. SnO{sub 2} films were polycrystalline with crystallites of tetragonal structure with grain sizes lie in the 5–8 nm range. Films with snow like crystallite morphology offer high specific surface area. The blue-shifted value of band gap of as-grown films confirmed the quantum confinement effect of grains. Refractive index of the films lies in the 2.1–2.3 range. Films prepared with NH{sub 4}Cl exhibit relatively lower resistivity of the order of 10{sup 0}–10{sup −1} Ω cm. The present synthesis has advantages such as low cost, low temperature and green friendly, which yields small particle size, large surface–volume ratio, and high crystallinity SnO{sub 2} films.

  3. Self-anti-reflective density-modulated thin films by HIPS technique

    Science.gov (United States)

    Keles, Filiz; Badradeen, Emad; Karabacak, Tansel

    2017-08-01

    A critical factor for an efficient light harvesting device is reduced reflectance in order to achieve high optical absorptance. In this regard, refractive index engineering becomes important to minimize reflectance. In this study, a new fabrication approach to obtain density-modulated CuIn x Ga(1-x)Se2 (CIGS) thin films with self-anti-reflective properties has been demonstrated. Density-modulated CIGS samples were fabricated by utilizing high pressure sputtering (HIPS) at Ar gas pressure of 2.75 × 10-2 mbar along with conventional low pressure sputtering (LPS) at Ar gas pressure of 3.0 × 10-3 mbar. LPS produces conventional high density thin films while HIPS produces low density thin films with approximate porosities of ˜15% due to a shadowing effect originating from the wide-spread angular atomic of HIPS. Higher pressure conditions lower the film density, which also leads to lower refractive index values. Density-modulated films that incorporate a HIPS layer at the side from which light enters demonstrate lower reflectance thus higher absorptance compared to conventional LPS films, although there is not any significant morphological difference between them. This result can be attributed to the self-anti-reflective property of the density-modulated samples, which was confirmed by the reduced refractive index calculated for HIPS layer via an envelope method. Therefore, HIPS, a simple and scalable approach, can provide enhanced optical absorptance in thin film materials and eliminate the need for conventional light trapping methods such as anti-reflective coatings of different materials or surface texturing.

  4. Probing Thin Film Thermophysical Properties Using the Femtosecond Transient ThermoReflectance Technique

    Science.gov (United States)

    2001-05-30

    x Thin Film Substrate Thermal Diffusion 100 - 1000 nm Nonequilibrium Energy Deposition Process Free Electrons Absorb Radiant Energy Electrons Transfer...diffusivity. techo " 90 ps ± 0 20 40 60 80 100 0 50 100 150 200 250 300 eff = 27 3 x 10 -6 m2/s bulk = 67 x 10-6 m2/s Si gn al ( V

  5. Development of spray technique for the preparation of thin films and characterization of tin oxide transparent conductors

    Energy Technology Data Exchange (ETDEWEB)

    Amanullah, F.M.; Saleh Al Mobarak, M.; Al-Dhafiri, A.M.; Al-Shibani, K.M. [King Saud Univ., Riyadh (Saudi Arabia). Dept. of Physics

    1999-06-15

    Tin oxide (TO) thin films of different thickness have been prepared by a specially designed, fabricated and developed spray technique using a stock solution of alcoholic stannous chloride (0.5 M concentration). The films have been characterized by X-ray diffraction, optical transmission and electrical studies. The XRD patterns show that the films are polycrystalline in nature and the results are in good agreement with ASTM data. From the XRD data `d` values and grain size of the crystallites have been calculated. The grain size of TO films lie in the range 300-514 A. Refractive index (n) and thickness of the films have been determined using optical transmission data. The effect of film thickness on different parameters (figure of merit, conductivity, transmission and refractive index) is presented and discussed. Variation of sheet resistance as a function of film thickness has been discussed. It is observed that the optical and electrical properties of TO films strongly depend on the thickness of the film. Optimum conditions are established based on the maximum figure of merit value. The film prepared at 450 C with the maximum thickness of 5262 A showed the maximum figure of merit 0.7 x 10{sup -3} {Omega}{sup -1}. The corresponding film properties are R = 30 {Omega} per square, T{sub f} = 0.70 (orig.) 23 refs.

  6. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Ahumada-Lazo, R.; Torres-Martínez, L.M. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Ruíz-Gómez, M.A. [Universidad Autónoma de Nuevo León, Facultad de Ingeniería Civil, Departamento de Ecomateriales y Energía, Av. Universidad S/N Ciudad Universitaria, San Nicolás de los Garza, Nuevo León C.P. 66450, México (Mexico); Departmento de Física Aplicada, CINVESTAV-IPN, Antigua Carretera a Progreso km 6, Mérida, Yucatán 97310, México (Mexico); Vega-Becerra, O.E. [Centro de Investigación en Materiales Avanzados S.C, Alianza norte 202, Parque de Investigación e Innovación Tecnológica, C.P. 66600 Apodaca Nuevo León, México (Mexico); and others

    2014-12-15

    Graphical abstract: - Highlights: • Decolorization of Orange G dye using highly c-axis-oriented ZnO thin films. • The flake-shaped film shows superior and stable photoactivity at a wide range of pH. • The highest photodecolorization was achieved at pH of 7. • The exposure of (101) and (100) facets enhanced the photoactivity. • ZnO thin films exhibit a promising performance as recyclable photocatalysts. - Abstract: The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV–visible spectroscopy (UV–Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  7. Ceramic Composite Thin Films

    Science.gov (United States)

    Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor); Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor)

    2013-01-01

    A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

  8. Preparation and dielectric properties of compositionally graded (Ba,Sr)TiO3 thin film by sol-gel technique

    Institute of Scientific and Technical Information of China (English)

    ZHANG Tian-jin; WANG Jun; ZHANG Bai-shun; WANG Jin-zhao; WAN Neng; HU Lan

    2006-01-01

    Compositional graded BaxSr1-xTiO3 (x=0.6,0.7,0.8,0.9,1.0) (BST) thin films (less than 400 nm) were fabricated on Si and Pt/Ti/SiO2/Si substrates by sol-gel technique. A special heating treatment was employed to form the uniform composition gradients at 700 ℃. The microstructures of the films were studied by means of X-ray diffraction,atomic force microscope and field emission scanning electron microscopy. The results show that the films have uniform and crack-free surface morphology with perovskite structure phase. The small signal dielectric constant (εr) and dielectric loss (tanδ) are found to be 335 and 0.045 at room temperature and 200 kHz. The dielectric properties change significantly with applied dc bias,and the graded thin film show high tunability of 42.3% at an applied field of 250 kV/cm. All the results indicate that the graded BST thin films prepared by sol-gel technique have a promising candidate for microelectronic device.

  9. Effects of Thermal Annealing on the Optical Properties of Titanium Oxide Thin Films Prepared by Chemical Bath Deposition Technique

    Directory of Open Access Journals (Sweden)

    H.U. Igwe

    2010-08-01

    Full Text Available A titanium oxide thin film was prepared by chemical bath deposition technique, deposited on glass substrates using TiO2 and NaOH solution with triethanolamine (TEA as the complexing agent. The films w ere subjected to post deposition annealing under various temperatures, 100, 150, 200, 300 and 399ºC. The thermal treatment streamlined the properties of the oxide films. The films are transparent in the entire regions of the electromagnetic spectrum, firmly adhered to the substrate and resistant to chemicals. The transmittance is between 20 and 95% while the reflectance is between 0.95 and 1%. The band gaps obtained under various thermal treatments are between 2.50 and 3.0 ev. The refractive index is between 1.52 and 2.55. The thickness achieved is in the range of 0.12-0.14 :m.These properties of the oxide film make it suitable for application in solar cells: Liquid and solid dye-sensitized photoelectrochemical solar cells, photo induced water splitting, dye synthesized solar cells, environmental purifications, gas sensors, display devices, batteries, as well as, solar cells with an organic or inorganic extremely thin absorber. These thin films are also of interest for the photooxidation of water, photocatalysis, electro chromic devices and other uses.

  10. Cu doping concentration effect on the physical properties of CdS thin films obtained by the CBD technique

    Science.gov (United States)

    Albor Aguilera, M. L.; Flores Márquez, J. M.; Remolina Millan, A.; Matsumoto Kuwabara, Y.; González Trujillo, M. A.; Hernández Vásquez, C.; Aguilar Hernandez, J. R.; Hernández Pérez, M. A.; Courel-Piedrahita, M.; Madeira, H. T. Yee

    2017-08-01

    Cu(In, Ga)Se2 (CIGS) and Cu2ZnSnS4 (CZTS) semiconductors are direct band gap materials; when these types of material are used in solar cells, they provide efficiencies of 22.1% and 12.6%, respectively. Most traditional fabrication methods involve expensive vacuum processes including co-evaporation and sputtering techniques, where films and doping are conducted separately. On the other hand, the chemical bath deposition (CBD) technique allows an in situ process. Cu-doped CdS thin films working as a buffer layer on solar cells provide good performing devices and they may be deposited by low cost techniques such as chemical methods. In this work, Cu-doped CdS thin films were deposited using the CBD technique on SnO2:F (FTO) substrates. The elemental analysis and mapping reconstruction were conducted by EDXS. Morphological, optical and electrical properties were studied, and they revealed that Cu doping modified the CdS structure, band-gap value and the electrical properties. Cu-doped CdS films show high resistivity compared to the non-doped CdS. The appropriate parameters of Cu-doped CdS films were determined to obtain an adequate window or buffer layer on CIGS and CZTS photovoltaic solar cells.

  11. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  12. Thin Film & Deposition Systems (Windows)

    Data.gov (United States)

    Federal Laboratory Consortium — Coating Lab: Contains chambers for growing thin film window coatings. Plasma Applications Coating Lab: Contains chambers for growing thin film window coatings. Solar...

  13. Structure, optical and electrical properties of indium tin oxide ultra thin films prepared by jet nebulizer spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    M. Thirumoorthi

    2016-03-01

    Full Text Available Indium tin oxide (ITO thin films have been prepared by jet nebulizer spray pyrolysis technique for different Sn concentrations on glass substrates. X-ray diffraction patterns reveal that all the films are polycrystalline of cubic structure with preferentially oriented along (222 plane. SEM images show that films exhibit uniform surface morphology with well-defined spherical particles. The EDX spectrum confirms the presence of In, Sn and O elements in prepared films. AFM result indicates that the surface roughness of the films is reduced as Sn doping. The optical transmittance of ITO thin films is improved from 77% to 87% in visible region and optical band gap is increased from 3.59 to 4.07 eV. Photoluminescence spectra show mainly three emissions peaks (UV, blue and green and a shift observed in UV emission peak. The presence of functional groups and chemical bonding was analyzed by FTIR. Hall effect measurements show prepared films having n-type conductivity with low resistivity (3.9 × 10−4 Ω-cm and high carrier concentrations (6.1 × 1020 cm−3.

  14. Nanostructured silicon carbon thin films grown by plasma enhanced chemical vapour deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Coscia, U. [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); CNISM Unita' di Napoli, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Ambrosone, G., E-mail: ambrosone@na.infn.it [Dipartimento di Fisica, Università di Napoli “Federico II” Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); SPIN-CNR, Complesso Universitario MSA, via Cinthia, 80126 Napoli (Italy); Basa, D.K. [Department of Physics, Utkal University, Bhubaneswar 751004 (India); Rigato, V. [INFN Laboratori Nazionali Legnaro, 35020 Legnaro (Padova) (Italy); Ferrero, S.; Virga, A. [Dipartimento di Scienza Applicata e Tecnologia, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Torino (Italy)

    2013-09-30

    Nanostructured silicon carbon thin films, composed of Si nanocrystallites embedded in hydrogenated amorphous silicon carbon matrix, have been prepared by varying rf power in ultra high vacuum plasma enhanced chemical vapour deposition system using silane and methane gas mixtures diluted in hydrogen. In this paper we have studied the compositional, structural and electrical properties of these films as a function of rf power. It is shown that with increasing rf power the atomic densities of carbon and hydrogen increase while the atomic density of silicon decreases, resulting in a reduction in the mass density. Further, it is demonstrated that carbon is incorporated into amorphous matrix and it is mainly bonded to silicon. The study has also revealed that the crystalline volume fraction decreases with increase in rf power and that the films deposited with low rf power have a size distribution of large and small crystallites while the films deposited with relatively high power have only small crystallites. Finally, the enhanced transport properties of the nanostructured silicon carbon films, as compared to amorphous counterpart, have been attributed to the presence of Si nanocrystallites. - Highlights: • The mass density of silicon carbon films decreases from 2.3 to 2 g/cm{sup 3}. • Carbon is incorporated in the amorphous phase and it is mainly bonded to silicon. • Nanostructured silicon carbon films are deposited at rf power > 40 W. • Si nanocrystallites in amorphous silicon carbon enhance the electrical properties.

  15. Microstructure and strain relaxation in thin nanocrystalline platinum films produced via different sputtering techniques

    Energy Technology Data Exchange (ETDEWEB)

    Gruber, Wolfgang, E-mail: wolfgang.gruber@tu-clausthal.de [Institut für Metallurgie, TU Clausthal, Robert-Koch-Str. 42, D38678 Clausthal-Zellerfeld (Germany); Baehtz, Carsten [Institut für Ionenstrahlphysik und Materialforschung, Helmholtz-Zentrum Dresden-Rossendorf, Dresden (Germany); Horisberger, Michael [Laboratory for Scientific Developments & Novel Materials (LDM), Paul-Scherrer-Institute, Villigen PSI (Switzerland); Ratschinski, Ingmar [Institut für Nichtmetallische Werkstoffe, TU Clausthal, Zehntnerstr. 2a, D-38678 Clausthal-Zellerfeld (Germany); Clausthaler Zentrum für Materialtechnik, Leibnizstraße 9, D-38678 Clausthal-Zellerfeld (Germany); Schmidt, Harald [Institut für Metallurgie, TU Clausthal, Robert-Koch-Str. 42, D38678 Clausthal-Zellerfeld (Germany); Clausthaler Zentrum für Materialtechnik, Leibnizstraße 9, D-38678 Clausthal-Zellerfeld (Germany)

    2016-04-15

    Graphical abstract: - Highlights: • Residual strain relaxation in nano crystalline platinum films was investigated. • Magnetron sputtered and ion beam sputtered Pt films are compared. • XRD measurements were carried out using synchrotron radiation. • Thickness fringes in the Bragg peak give information on microstructure. • Residual strain relaxation is stronger in films composed of equally oriented columns. - Abstract: In this study we investigated the correlation between microstructure and residual strain relaxation in nanocrystalline Pt films with a thickness of about 20 nm produced by different deposition techniques: magnetron sputtering and ion beam sputtering. X-ray diffractometry was carried out using synchrotron radiation. The out-of-plane interplanar distance was measured during isothermal in situ annealing at temperatures between 130 °C und 210 °C. The thermoelastic expansion coefficient is equal for both types of nanocrystalline Pt films and slightly lower than for coarse grained Pt. The relaxation of residual out-of-plain strain depends on temperature and is significantly stronger in the case of the magnetron sputtered films than for the ion beam sputtered films. Different relaxation of compressive stress is ascribed to the different microstructures which evolve during deposition via the corresponding deposition technique. Thickness fringes around the (1 1 1) Bragg peak deposited via magnetron sputtering reveal that these films are essentially composed of columnar (1 1 1) oriented grains which cover the whole film thickness. In contrast, no thickness fringes are observed around the (1 1 1) Bragg peak of films prepared by ion beam sputtering indicating a significantly different microstructure. This is confirmed by Electron Backscatter Diffraction which reveals a (1 1 1) texture for both types of films. The (1 1 1) texture, however, is significantly stronger in the case of the magnetron sputtered films. Grain growth at low homologous

  16. Preparation of SrIrO{sub 3} thin films by using metal-organic aerosol deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Esser, Sebastian; Schneider, Melanie; Moshnyaga, Vasily; Gegenwart, Philipp [1. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-07-01

    The interplay between spin-orbit coupling and electronic correlations could lead to interesting novel states in iridium oxide materials. We focus on the perovskite phase of SrIrO{sub 3} because Moon et al. [1] showed by using optical spectroscopy and first-principles calculations that the last member of the Ruddlesden-Popper series Sr{sub n+1}Ir{sub n}O{sub 3n+1} (n = ∞) is close to the Mott transition. By using metal-organic aerosol deposition technique we have grown SrIrO{sub 3} thin films on (111)-oriented SrTiO{sub 3} substrates. The cubic symmetry of the SrTiO{sub 3} substrate ensured that the SrIrO{sub 3} thin film grew in the monoclinic perovskite phase. The X-ray diffraction results suggest that SrIrO{sub 3} thin films in perovskite structure were obtained and these show out of plane epitaxy with monoclinic (002){sub m}-orientation. The temperature dependence of the electrical resistivity of these SrIrO{sub 3} thin films were investigated and metallic behavior was observed down to 50 K.

  17. Photovoltaic properties of undoped ZnO thin films prepared by the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Ikhmayies, S.J. [Applied Science Private Univ., Amman (Jordan). Dept. of Physics; Abu El-Haija, N.M.; Ahmad-Bitar, R.N. [Jordan Univ., Amman (Jordan). Dept. of Physics

    2009-07-01

    Zinc oxide (ZnO) can be used as a window material, transparent electrode and active layer in different types of solar cells, UV emitters, and UV sensors. In addition to being low cost, ZnO is more abundant than indium tin oxide. ZnO is non toxic and has a high chemical stability in reduction environments. When ZnO films are made without any intentional doping, they exhibit n-type conductivity. ZnO thin films can be prepared by reactive sputtering, laser ablation, chemical-vapour deposition, laser molecular-beam epitaxy, thermal evaporation, sol-gel, atomic layer deposition and spray pyrolysis, with the latter being simple, inexpensive and adaptable to large area depositions. In this work ZnCl{sub 2} was used as a source of Zn where it was dissolved in distilled water. The structural, electrical and optical properties of the films were investigated due to their important characteristic for solar cell applications. Polycrystalline ZnO thin films were deposited on glass substrate by spray pyrolysis using a home-made spraying system at substrate temperature of 450 degrees C. The films were characterized by recording and analyzing their I-V plots, their transmittance, X-ray diffraction and SEM micrographs. There resistivity was found to be about 200 ohms per cm and their bandgap energy about 3.27 eV. X-ray diffraction patterns revealed that the films have a hexagonal wurtzite structure and are highly ordered with a preferential orientation (002). SEM images revealed that the substrates are continuously covered and the surface of the film is uniform. 16 refs., 4 figs.

  18. Characterization and photocatalytic activity of boron-doped TiO2 thin films prepared by liquid phase deposition technique

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed; O M Hussain

    2008-10-01

    Boron doped TiO2 thin films have been successfully deposited on glass substrate and silicon wafer at 30°C from an aqueous solution of ammonium hexa-fluoro titanate and boron trifluoride by liquid phase deposition technique. The boric acid was used as an – scavenger. The resultant films were characterized by XRD, EDAX, UV and microstructures by SEM. The result shows the deposited film to be amorphous which becomes crystalline between 400 and 500°C. The EDAX and XRD data confirm the existence of boron atom in TiO2 matrix and a small peak corresponding to rutile phase was also found. Boron doped TiO2 thin films can be used as photocatalyst for the photodegradation of chlorobenzene which is a great environmental hazard. It was found that chlorobenzene undergoes degradation efficiently in presence of boron doped TiO2 thin films by exposing its aqueous solution to visible light. The photocatalytic activity increases with increase in the concentration of boron.

  19. Studies of ferroelectric heterostructure thin films, interfaces, and device-related processes via in situ analytical techniques.

    Energy Technology Data Exchange (ETDEWEB)

    Aggarwal, S.; Auciello, O.; Dhote, A. M.; Gao, Y.; Gruen, D. M.; Im, J.; Irene, E. A.; Krauss, A. R.; Muller, A. H.; Ramesh, R.

    1999-06-29

    The science and technology of ferroelectric thin films has experienced an explosive development during the last ten years. Low-density non-volatile ferroelectric random access memories (NVFRAMS) are now incorporated in commercial products such as ''smart cards'', while high permittivity capacitors are incorporated in cellular phones. However, substantial work is still needed to develop materials integration strategies for high-density memories. We have demonstrated that the implementation of complementary in situ characterization techniques is critical to understand film growth and device processes relevant to device development. We are using uniquely integrated time of flight ion scattering and recoil spectroscopy (TOF-ISARS) and spectroscopic ellipsometry (SE) techniques to perform in situ, real-time studies of film growth processes in the high background gas pressure required to growth ferroelectric thin films. TOF-ISARS provides information on surface processes, while SE permits the investigation of buried interfaces as they are being formed. Recent studies on SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) and Ba{sub x}Sr{sub 1{minus}x}TiO{sub 3} (BST) film growth and interface processes are discussed. Direct imaging of ferroelectric domains under applied electric fields can provide valuable information to understand domain dynamics in ferroelectric films. We discuss results of piezoresponse scanning force microscopy (SFM) imaging for nanoscale studies of polarization reversal and retention loss in Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} (PZT)-based capacitors. Another powerful technique suitable for in situ, real-time characterization of film growth processes and ferroelectric film-based device operation is based on synchrotrons X-ray scattering, which is currently being implemented at Argonne National Laboratory.

  20. A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

    Institute of Scientific and Technical Information of China (English)

    Jaydeep SARKAR; Tien-Heng HUANG; Lih-Ping WANG; Peter H.McDONALD; Chi-Fung LO; Paul S.GILMAN

    2009-01-01

    In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95-2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satis-factory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of AI-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

  1. A combinatorial approach of developing alloy thin films using co-sputtering technique for displays

    Institute of Scientific and Technical Information of China (English)

    Jaydeep; SARKAR; Tien-Heng; HUANG; Lih-Ping; WANG; Peter; H.; McDONALD; Chi-Fung; LO; Paul; S.; GILMAN

    2009-01-01

    In this study we have used a combinatorial approach for producing binary and ternary alloy thin film libraries using a lab-scale RF co-sputtering system. Initially we used two elemental sputtering targets, i.e. aluminum (Al) target and neodymium (Nd) target, to produce a film library of varying composition and successfully identified a suitable composition range (1.95―2.38 at% Nd) in which resistance to hillock formation and resistivity of the film spots were found to be satisfactory in annealed state (350℃, 30 min). In another case, in order to form ternary alloy composition library we have used two sputtering targets, i.e. an Al-0.5 at% Nd alloy target and an elemental Ni target. Though, co-sputtered Al-0.6 at% Nd-0.9 at% Ni alloy films showed satisfactory resistance to hillock formation and low resistivity after annealing, film deposited from a ternary alloy target with the same composition failed to show satis- factory resistance to hillock formation during annealing. In case of Al-0.6 at% Nd-0.9 at% Ni alloy target, 250 nm thick film showed poor resistance to hillock formation than the 500 nm thick film. This clearly showed thickness-dependent hillock performance of Al-0.6 at% Nd-0.9 at% Ni alloy. In this study it was found that, in addition to the process variables, metallurgical microstructure of the alloy sputtering targets had significant effect on the film properties which was not obvious from the results of films deposited using co-sputtering of the individual elemental targets.

  2. ZnO THIN FILMS PREPARED BY SPRAY-PYROLYSIS TECHNIQUE FROM ORGANO-METALLIC PRECURSOR

    Directory of Open Access Journals (Sweden)

    Martin Mikulics

    2012-07-01

    Full Text Available Presented experiments utilize methanolic solution of zinc acetyl-acetonate as a precursor and sapphire (001 as a substrate for deposition of thin films of ZnO. The X-ray diffraction analysis revealed polycrystalline character of prepared films with preferential growth orientation along c-axis. The roughness of prepared films was assessed by AFM microscopy and represented by roughness root mean square (RMS value in range of 1.8 - 433 nm. The surface morphology was mapped by scanning electron microscopy showing periodical structure with several local defects. The optical transmittance spectrum of ZnO films was measured in wavelength range of 200-1000 nm. Prepared films are transparent in visible range with sharp ultra-violet cut-off at approximately 370 nm. Raman spectroscopy confirmed wurtzite structure and the presence of compressive stress within its structure as well as the occurrence of oxygen vacancies. The four-point Van der Pauw method was used to study the transport prosperities. The resistivity of presented ZnO films was found 8 × 10–2 Ω cm with carrier density of 1.3 × 1018 cm–3 and electron mobility of 40 cm2 V–1 s–1.

  3. Microwave Response of MgB2/Al2O3 Superconducting Thin Films by Microstrip Resonator Technique

    Institute of Scientific and Technical Information of China (English)

    SHI Li-Bin; ZHENG Yan; REN Jun-Yuan; LI Ming-Biao; ZHANG Feng-Yun; LI Bo-Xin; DONG Hai-Kuan

    2007-01-01

    Double-sided superconducting MgB2 thin films are deposited onto c-Al2O3 substrates by the hybrid physical chemical vapour deposition method. The microwave response of MgBz/Al2O3 is investigated by microstrip resonator technique. A grain-size model is introduced to the theory of microstrip resonators to analyse microwave properties of the films. We obtain effective penetration depth of the films at 0K (λe0 = 463 nm) and surface resistance (R3 = 1.52mΩ at 11 K and 8.73 GHz) by analysing the resonant frequency and unload quality factor of the microstrip resonator, which suggests that the impurities and disorders of grain boundaries of MgB2/Al2O3 result in increasing penetration depth and surface resistance of the films.

  4. Biomimetic thin film synthesis

    Energy Technology Data Exchange (ETDEWEB)

    Graff, G.L.; Campbell, A.A.; Gordon, N.R.

    1995-05-01

    The purpose of this program is to develop a new process for forming thin film coatings and to demonstrate that the biomimetic thin film technology developed at PNL is useful for industrial applications. In the biomimetic process, mineral deposition from aqueous solution is controlled by organic functional groups attached to the underlying substrate surface. The coatings process is simple, benign, inexpensive, energy efficient, and particularly suited for temperature sensitive substrate materials (such as polymers). In addition, biomimetic thin films can be deposited uniformly on complex shaped and porous substrates providing a unique capability over more traditional line-of-sight methods.

  5. Characterization of molybdenum-doped indium oxide thin films by spray pyrolysis technique

    Indian Academy of Sciences (India)

    S M Rozati; Z Bargebidi

    2013-08-01

    In this research, indium oxide nanostructure undoped and doped with Mo were prepared on glass substrates using spray pyrolysis technique. Various parameters such as dopant concentration and deposition temperatures were studied. Structural properties of these films were investigated by X-ray diffraction and scanning electron microscopy. Electrical and optical properties have been studied by Hall effect and UV–Visible spectrophotometer, respectively. The thickness of the films was determined by PUMA software. The variation of refractive index, extension coefficient and bandgap of these films also were investigated.

  6. An Experimental Insight into the ZnO Thin Films Properties Prepared by Dip Coating Technique

    Directory of Open Access Journals (Sweden)

    M. Benhaliliba

    2016-03-01

    Full Text Available The physical properties of the pure and metal doped ZnO films are investigated using a low cost dip coating technique. The films have grown slowly onto a glass substrate at room temperature. Based on X-ray pattern parameters are extracted such as grain size, lattice parameters. Optical measurements within the UV-Vis band give us the transmittance of films ( 80 % and optical band gap. Using the Hall Effect measurement (HMS in room temperature, we determine the bulk density of charge carriers, mobility and their electrical resistivity.

  7. Fabrication of CdS/CdTe-Based Thin Film Solar Cells Using an Electrochemical Technique

    Directory of Open Access Journals (Sweden)

    I. M. Dharmadasa

    2014-06-01

    Full Text Available Thin film solar cells based on cadmium telluride (CdTe are complex devices which have great potential for achieving high conversion efficiencies. Lack of understanding in materials issues and device physics slows down the rapid progress of these devices. This paper combines relevant results from the literature with new results from a research programme based on electro-plated CdS and CdTe. A wide range of analytical techniques was used to investigate the materials and device structures. It has been experimentally found that n-, i- and p-type CdTe can be grown easily by electroplating. These material layers consist of nano- and micro-rod type or columnar type grains, growing normal to the substrate. Stoichiometric materials exhibit the highest crystallinity and resistivity, and layers grown closer to these conditions show n → p or p → n conversion upon heat treatment. The general trend of CdCl2 treatment is to gradually change the CdTe material’s n-type electrical property towards i-type or p-type conduction. This work also identifies a rapid structural transition of CdTe layer at 385 ± 5 °C and a slow structural transition at higher temperatures when annealed or grown at high temperature. The second transition occurs after 430 °C and requires more work to understand this gradual transition. This work also identifies the existence of two different solar cell configurations for CdS/CdTe which creates a complex situation. Finally, the paper presents the way forward with next generation CdTe-based solar cells utilising low-cost materials in their columnar nature in graded bandgap structures. These devices could absorb UV, visible and IR radiation from the solar spectrum and combine impact ionisation and impurity photovoltaic (PV effect as well as making use of IR photons from the surroundings when fully optimised.

  8. Thickness dependence of dispersion parameters of the MoO{sub x} thin films prepared using the vacuum evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Akın, Ümmühan, E-mail: uakin@selcuk.edu.tr; Şafak, Haluk

    2015-10-25

    The optical behaviors of molybdenum oxide thin films are highly important due to their widespread applications. In the present paper, the effect of thickness on the structure, morphology and optical properties of molybdenum oxide (MoO{sub x}) thin films prepared on Corning glass substrates using thermal evaporation technique was studied. The structure and morphology of films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM), respectively, while their optical properties were investigated by UV-VIS-NIR spectrophotometry in the spectral range from 300 to 2500 nm. It was observed that whole films have amorphous structure and also they showed rather high transmittance values reached nearly up to 90%. Absorption analysis showed two types of electronic transitions; both direct and indirect interband transition energy values of films decrease from 4.47 to 3.45 eV and from 3.00 to 2.75 eV, respectively, with increasing the film thickness, while the width of the localized states tail increases with thickness. This decrease in the band gap value can be attributed to the rising oxygen-ion vacancy densities with the thickness. The refractive indices of films were calculated from Sellmeier coefficients determined by nonlinear curve fitting method based on the measured transmittance spectral data. The dispersion of the refractive index was discussed in terms of the Wemple-DiDomenico single-oscillator model. The dispersion parameters such as average oscillator energy, E{sub o}, the dispersion energy, E{sub d}, and static refractive index n{sub o} were evaluated and they found to vary significantly with the film thickness. - Highlights: • MoO{sub x} thin films with different thickness were prepared using the vacuum evaporation technique. • The variation of fundamental absorption edge with the film thickness was determined. • A detailed dispersion analysis based on the Wemple-DiDomenico model was performed. • The dependence of all

  9. Selective epitaxial growth for YBCO thin films

    NARCIS (Netherlands)

    Damen, C.A.J.; Smilde, H.-J.H.; Blank, D.H.A.; Rogalla, H.

    1998-01-01

    A novel selective epitaxial growth (SEG) technique for (YBCO) thin films is presented. The method involves the deposition of a thin (about 10 nm) metal layer, in the desired pattern, on a substrate before the deposition of the superconducting thin film. During growth the metal reacts with the YBCO,

  10. Photocatalytic efficiency of reusable ZnO thin films deposited by sputtering technique

    Science.gov (United States)

    Ahumada-Lazo, R.; Torres-Martínez, L. M.; Ruíz-Gómez, M. A.; Vega-Becerra, O. E.; Figueroa-Torres, M. Z.

    2014-12-01

    The photocatalytic activity of ZnO thin films with different physicochemical characteristics deposited by RF magnetron sputtering on glass substrate was tested for the decolorization of orange G dye aqueous solution (OG). The crystalline phase, surface morphology, surface roughness and the optical properties of these ZnO films were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), atomic force microscopy (AFM) and UV-visible spectroscopy (UV-Vis), respectively. The dye photodecolorization process was studied at acid, neutral and basic pH media under UV irradiation of 365 nm. Results showed that ZnO films grow with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a (002) preferential crystalline orientation. A clear relationship between surface morphology and photocatalytic activity was observed for ZnO films. Additionally, the recycling photocatalytic abilities of the films were also evaluated. A promising photocatalytic performance has been found with a very low variation of the decolorization degree after five consecutive cycles at a wide range of pH media.

  11. New linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

    Science.gov (United States)

    Venkatesan, S.; Pierret, R. F.; Neudeck, G. W.

    1994-04-01

    A new linear sweep technique to measure generation lifetimes (tau(sub g)) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 mu s to 2.4 mu s.

  12. Thin film device applications

    CERN Document Server

    Kaur, Inderjeet

    1983-01-01

    Two-dimensional materials created ab initio by the process of condensation of atoms, molecules, or ions, called thin films, have unique properties significantly different from the corresponding bulk materials as a result of their physical dimensions, geometry, nonequilibrium microstructure, and metallurgy. Further, these characteristic features of thin films can be drasti­ cally modified and tailored to obtain the desired and required physical characteristics. These features form the basis of development of a host of extraordinary active and passive thin film device applications in the last two decades. On the one extreme, these applications are in the submicron dimensions in such areas as very large scale integration (VLSI), Josephson junction quantum interference devices, magnetic bubbles, and integrated optics. On the other extreme, large-area thin films are being used as selective coatings for solar thermal conversion, solar cells for photovoltaic conver­ sion, and protection and passivating layers. Ind...

  13. Top gate ZnO-Al2O3 thin film transistors fabricated using a chemical bath deposition technique

    Science.gov (United States)

    Gogoi, Paragjyoti; Saikia, Rajib; Changmai, Sanjib

    2015-04-01

    ZnO thin films were prepared by a simple chemical bath deposition technique using an inorganic solution mixture of ZnCl2 and NH3 on glass substrates and then were used as the active material in thin film transistors (TFTs). The TFTs were fabricated in a top gate coplanar electrode structure with high-k Al2O3 as the gate insulator and Al as the source, drain and gate electrodes. The TFTs were annealed in air at 500 °C for 1 h. The TFTs with a 50 μm channel length exhibited a high field-effect mobility of 0.45 cm2/(V·s) and a low threshold voltage of 1.8 V. The sub-threshold swing and drain current ON-OFF ratio were found to be 0.6 V/dec and 106, respectively.

  14. Multifunctional thin film surface

    Energy Technology Data Exchange (ETDEWEB)

    Brozik, Susan M.; Harper, Jason C.; Polsky, Ronen; Wheeler, David R.; Arango, Dulce C.; Dirk, Shawn M.

    2015-10-13

    A thin film with multiple binding functionality can be prepared on an electrode surface via consecutive electroreduction of two or more aryl-onium salts with different functional groups. This versatile and simple method for forming multifunctional surfaces provides an effective means for immobilization of diverse molecules at close proximities. The multifunctional thin film has applications in bioelectronics, molecular electronics, clinical diagnostics, and chemical and biological sensing.

  15. Epitaxial thin film GaAs solar cells using OM-CVD techniques. [Organometallics

    Science.gov (United States)

    Stirn, R. J.; Wang, K. L.; Yeh, Y. C. M.

    1981-01-01

    A new approach has been initiated at JPL to fabricate thin-film, high efficiency GaAs solar cells on low-cost, single-crystal Si substrates having a thin CVD interlayer of Ge to minimize the lattice and thermal expansion mismatch. For initial experiments, n(+)/p GaAs cells were grown by OM-CVD on single-crystal GaAs and Ge wafers. Details of the growths and performance results will be presented. Subsequently, a combined epitaxial structure of OM-CVD GaAs on a strongly adherent Ge interlayer on (100) Si was grown. This is the first report of the successful growth of this composite structure. Low module costs projected by JPL SAMICS methodology calculations and the potential for 400-600W/kg space solar arrays will be discussed.

  16. Fabrication and evaluation of CdS/PbS thin film solar cell by chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Saikia, Dulen, E-mail: dulen.s@rediffmail.com; Phukan, Pallabi

    2014-07-01

    A solar cell with the structure glass/SnO{sub 2}/CdS/PbS/HgTe has been fabricated where both window (CdS) and absorber (PbS) layers were deposited by a chemical bath deposition technique which is completely free from any complexing agents. The films were prepared by in-situ thermolysis of precursors confined in polyvinyl alcohol matrix (PVA). As the method is free of any complexing agent, hence no need to control the pH of the solution. The as-prepared films were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and UV–Vis absorption spectroscopy. The surface morphology clearly shows that as synthesized CdS/PVA and PbS/PVA thin films were nanostructured, almost homogeneous, without any pinholes or cracks and covered the substrate well. The photovoltaic parameters of the cell were measured with the Keithley 2400 source meter under one sun illumination and efficiency of the cell was found to be 1.668%. - Highlights: • Polyvinyl alcohol matrix-capped PbS thin film from a complexing agent free system • Fabrication of CdS/PbS solar cell based on chemical bath deposition technique • An efficiency of 1.668% is achieved under one SUN illumination.

  17. Structural and optical properties of Zn1−xNixTe thin films prepared by electron beam evaporation technique

    Directory of Open Access Journals (Sweden)

    Arshad Mahmood

    2015-02-01

    Full Text Available Zn1−xNixTe thin films with different composition (x=0.0, 0.05, 0.10, 0.15 and 0.20 were deposited on glass substrate by electron beam evaporation technique followed by its characterization using advanced structural and optical analysis techniques. Structural properties of the prepared thin films were studied by X-ray diffraction (XRD. The XRD patterns revealed that the binary compounds transformed into a ternary compound with cubic structure having preferred orientation along the c-direction with (111 planes. Composition analysis of the films was determined by energy dispersive analysis of X-rays (EDAX and found to be in agreement with the precursor composition. Optical properties such as extinction coefficient (k and band gap energy of these films were examined by using a spectroscopic ellipsometer. It was found that the extinction coefficient (k increased with the addition of Ni content in the alloy. In comparison, the band gap energy was also determined by using transmission spectra and found to be agreed with that of the ellipsometric results. These analyses confirm that the band gap energy decreases with the increase of Ni content in the alloy.

  18. Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Tuğluoğlu, Nihat, E-mail: tugluo@gmail.com [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Barış, Behzad; Gürel, Hatice [Department of Physics, Faculty of Arts and Sciences, Giresun University, Gazipaşa Campus, Giresun 28100 (Turkey); Karadeniz, Serdar [Department of Technology, Sarayköy Nuclear Research and Training Center, 06983 Saray, Ankara (Turkey); Yüksel, Ömer Faruk [Department of Physics, Faculty of Science, Selçuk University, Campus Konya 42075 (Turkey)

    2014-01-05

    Highlights: • Thin film of rubrene has been deposited by spin coating technique. • The band gap properties of the film were investigated in the range 200–700 nm. • The analysis of the absorption coefficient revealed indirect allowed transition. • The parameters such as barrier height and ideality factor were determined. -- Abstract: Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200–700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UV–vis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E{sub U}) was determined to be 1.169 eV. The current–voltage (I–V) characteristics and electrical conduction properties of rubrene/n-Si device fabricated by spin coating method have also been investigated. The I–V characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions.

  19. Synthesis of nanocrystalline silicon thin films using the increase of the deposition pressure in the hot-wire chemical vapour deposition technique

    Directory of Open Access Journals (Sweden)

    J.K. Rath

    2010-01-01

    Full Text Available Nanostructured thin silicon-based films have been deposited using the hot-wire chemical vapour deposition (HWCVD technique at the University of the Western Cape. A variety of techniques including optical and infrared spectroscopy, Raman scattering spectroscopy, X-rays diffraction (XRD and transmission electron microscopy (TEM have been used for characterisation of the films. The electrical measurements show that the films have good values of photoresponse, and the photocurrent remains stable after several hours of light soaking. This contribution will discuss the characteristics of the hydrogenated nanocrystalline silicon thin films deposited using increased process chamber pressure at a fixed hydrogen dilution ratio in monosilane gas.

  20. Thin films of chromium oxide compounds formed by the spray-ICP technique

    Science.gov (United States)

    Suzuki, M.; Kagawa, M.; Syono, Y.; Hirai, T.

    1990-01-01

    This films of Cr 2O 3, MCr 2O 4 (M = Co, Ni, Zn) and LaCrO 3 were synthesized on single crystal sapphire and fused quartz substrates, by introducing ultrasonically atomized solutions of corresponding metal nitrates into an inductively coupled plasma above 5000 K (the spray-ICP technique). All the films were transparent, with preferred orientations (110) for Cr 2O 3, (311) for MCr 2O 4 and (112) for LaCrO 3, when deposited on the sapphire substrates with a surface giving background X-ray reflection peaks. The (311) orientation of MCr 2O 4, however, changed to (111) with increasing substrate temperature. Non-oriented films were formed on the fused quartz substrates.

  1. Bio-Nanofabrication: Structuring Polymer Thin Films via Bacterial S-layer Proteins for Subsequent Use with Subtractive Nanofabrication Techniques

    Science.gov (United States)

    Esch, Mandy B.; Amponsah, Ebenezer K.; Bergkvist, Magnus

    2007-03-01

    Bio-molecule assisted lithography is a novel approach to create ordered patterns on the micro and nanometer size scale on thin films. The technique bears the potential to utilize self assembling properties of bio-molecules and to be integrated with conventional nanofabrication techniques. In the past, bacterial cell wall proteins (S-layers proteins) have been utilized to create ordered nanoparticle arrays. The work presented here employs S-layer proteins to shape UV-curable resist via an S-layer imprinted parylene template. Using this technique we can replicate S-layer patterns in resist thereby rendering the shape more resistant to subtractive nanofabrication techniques. The technique also demonstrates the adequacy of Nano Imprint Lithography to produce complex patterns not achievable with conventional lithography.

  2. Transformation from amorphous to nano-crystalline SiC thin films prepared by HWCVD technique without hydrogen dilution

    Indian Academy of Sciences (India)

    F Shariatmadar Tehrani

    2015-09-01

    Silicon carbide (SiC) thin films were deposited on Si(111) by the hot wire chemical vapour deposition (HWCVD) technique using silane (SiH4) and methane (CH4) gases without hydrogen dilution. The effects of SiH4 to CH4 gas flow ratio (R) on the structural properties, chemical composition and photoluminescence (PL) properties of the films deposited at the different gas flow ratios were investigated and compared. X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectra revealed a structural transition from amorphous SiC to cubic nano-crystalline SiC films with the increase in the gas flow ratio. Raman scattering confirmed the multi-phased nature of the films. Auger electron spectroscopy showed that the carbon incorporation in the film structure was strongly dependent on the gas flow ratio. A similar broad visible room-temperature PL with two peaks was observed for all SiC films. The main PL emission was correlated to the band to band transition in uniform a-SiC phase and the other lower energy emission was related to the confined a-Si : H clusters in a-SiC matrix. SiC nano-crystallites exhibit no significant contribution to the radiative recombination.

  3. Studies of Nano-structured Se77Sb23- x Ge x Thin Films Prepared by Physical Vapor Condensation Technique

    Science.gov (United States)

    Alvi, M. A.

    2017-02-01

    Bulk Se77Sb23- x Ge x material with x = 4 and 12 was prepared by employing a melt quench technique. Its amorphous as well as glassy nature was confirmed by x-ray diffraction analysis and nonisothermal differential scanning calorimetry measurements. The physical vapor condensation technique was applied to prepare nanostructured thin films of Se77Sb23- x Ge x material. The surface morphology of the films was examined using field-emission scanning electron microscopy, revealing average particle size between 20 nm and 50 nm. Systematic investigation of optical absorption data indicated that the optical transition was indirect in nature. The dark conductivity (dc conductivity) of nano-structured Se77Sb23- x Ge x thin films was also investigated at temperatures from 313 K to 463 K, revealing that it tended to increase with increasing temperature. Analyses of our experimental data also indicate that the conduction is due to thermally supported tunneling of charge carriers in confined states close to the band edges. The calculated values of activation energy agree well with the optical bandgap.

  4. Effect of Mn doping on the electrical and optical properties of SnO{sub 2} thin films deposited by chemical spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Indira Gandhi, T. [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramesh Babu, R., E-mail: rampap2k@yahoo.co.in [Crystal Growth and Thin Film Laboratory, Department of Physics, Bharathidasan University, Tiruchirappalli 620 024, Tamil Nadu (India); Ramamurthi, K. [Crystal Growth and Thin Film Laboratory, Department of Physics and Nanotechnology, Faculty of Engineering and Technology, SRM University, Kattankulathur 603 203, Tamil Nadu (India); Arivanandhan, M. [Nanodevices and Nanomaterials Division, Research Institute of Electronics, Shizuoka University, Hamamatsu 432 8011 (Japan)

    2016-01-01

    Manganese doped tin oxide (Mn:SnO{sub 2}) thin films were deposited by spray pyrolysis technique adding various concentrations of manganese acetate (0–8 at.%) in the spray solution of tin chloride. X-ray diffraction studies show the preferred growth along (301) direction for 0.0–2.0 at.% concentration of manganese acetate in the spray solution. Higher doping concentration of manganese acetate (4 and 8 at.%) in the solution shifts the preferred growth direction along (200) plane. Scanning electron microscopic studies reveal the change in the surface morphology of the films due to various levels of Mn doping. X-ray photoelectron spectroscopic analysis shows that in the prepared thin film manganese atoms exist in Mn{sup 3+} state. The sheet resistance of SnO{sub 2} film decreases from ~ 23.5 Ω/□ to 22.8 Ω/□ for 0.4 at.% doping concentration and increases with increasing Mn concentration in the solution. The average optical transmittance of SnO{sub 2} thin film increases from 34% to 55% in the wavelength region of 550–850 nm with increase in Mn concentration. Mn concentration in the films influences the intensity of the photoluminescence emission peak observed for SnO{sub 2} film at 398 nm. - Highlights: • Mn:SnO2 thin films deposited with different doping concentration by spray pyrolysis technique • Structural information confirms that all the films are polycrystalline and tetragonal crystal structure. • XPS studies confirm the oxidation state of Mn (3 +) and Sn (4 +) in Mn:SnO{sub 2} thin film. • 0.4 at.% of Mn:SnO{sub 2} thin film shows lowest sheet resistance 22.8 Ω/□. • Optical band gap of 1.2 at.% Mn:SnO{sub 2} thin film is about 3.70 eV.

  5. Structural, morphological, optical and opto-thermal properties of Ni-doped ZnO thin films using spray pyrolysis chemical technique

    Indian Academy of Sciences (India)

    S Rajeh; A Barhoumi; A Mhamdi; G Leroy; B Duponchel; M Amlouk; S Guermazi

    2016-02-01

    Nickel-doped zinc oxide thin films (ZnO : Ni) at different percentages were deposited on glass substrates using a chemical spray technique. The effect of Ni concentration on the structural, morphological, optical and photoluminescence (PL) properties of the ZnO : Ni thin films were investigated. X-ray diffraction analysis revealed that all films consist of single phase ZnO and was well crystallized in würtzite phase with the crystallites preferentially oriented towards the (002) direction parallel to the c-axis. The optical transmittance measurement was found to be higher than 90%, the optical band gap values of ZnO thin films decreased after doping from 3.29 to 3.21 eV. A noticeable change in optical constants was observed between undoped and Ni-doped ZnO. Room-temperature PL is observed for ZnO, and Ni-doped ZnO thin films.

  6. Drying of thin colloidal films

    Science.gov (United States)

    Routh, Alexander F.

    2013-04-01

    When thin films of colloidal fluids are dried, a range of transitions are observed and the final film profile is found to depend on the processes that occur during the drying step. This article describes the drying process, initially concentrating on the various transitions. Particles are seen to initially consolidate at the edge of a drying droplet, the so-called coffee-ring effect. Flow is seen to be from the centre of the drop towards the edge and a front of close-packed particles passes horizontally across the film. Just behind the particle front the now solid film often displays cracks and finally the film is observed to de-wet. These various transitions are explained, with particular reference to the capillary pressure which forms in the solidified region of the film. The reasons for cracking in thin films is explored as well as various methods to minimize its effect. Methods to obtain stratified coatings through a single application are considered for a one-dimensional drying problem and this is then extended to two-dimensional films. Different evaporative models are described, including the physical reason for enhanced evaporation at the edge of droplets. The various scenarios when evaporation is found to be uniform across a drying film are then explained. Finally different experimental techniques for examining the drying step are mentioned and the article ends with suggested areas that warrant further study.

  7. Structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique.

    Science.gov (United States)

    Ghrairi, Najla; Bouaicha, Mongi

    2012-07-01

    In this work, we report the structural, morphological, and optical properties of TiO2 thin films synthesized by the electro phoretic deposition technique. The TiO2 film was formed on a doped fluorine tin oxide (SnO2:F, i.e., FTO) layer and used as a photo electrode in a dye solar cell (DSC). Using spectroscopic ellipsometry measurements in the 200 to 800 nm wavelengths domain, we obtain a thickness of the TiO2 film in the range of 70 to 80 nm. Characterizations by X-ray diffraction and atomic force microscopy (AFM) show a polycrystalline film. In addition, AFM investigation shows no cracks in the formed layer. Using an ultraviolet-visible near-infrared spectrophotometer, we found that the transmittance of the TiO2 film in the visible domain reaches 75%. From the measured current-voltage or I-V characteristic under AM1.5 illumination of the formed DSC, we obtain an open circuit voltage Voc = 628 mV and a short circuit current Isc = 22.6 μA, where the surface of the formed cell is 3.14 cm2.

  8. Physical properties of Ag-doped cadmium telluride thin films fabricated by closed-space sublimation technique

    Science.gov (United States)

    Abbas Shah, N.; Ali, A.; Aqili, A. K. S.; Maqsood, A.

    2006-05-01

    Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass. In the next step, the annealed films at 450 °C for 30 min were dipped in AgNO 3-H 2O solution at room temperature. These films were again annealed at 450 °C for 1 h to obtain silver-doped samples. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), electrically i.e. DC electrical resistivity as well as photo resistivity by van der Pauw method at room temperature, dark conductivity, activation energy analysis as a function of temperature by two-probe method under vacuum, and spectrophotometry. The electron microprobe analyzer (EMPA) results showed an increase of Ag content composition in the samples by increasing the immersion time of films in solution. The Hall measurements indicated the increase in mobility and carrier concentrations of CdTe films by doping of Ag. A significant change in the shape and size of the CdTe grains were observed.

  9. Thin films of rare-earth (Y, La, Ce, Pr, Nd, Sm) oxides formed by the spray-ICP technique

    Science.gov (United States)

    Suzuki, M.; Kagawa, M.; Syono, Y.; Hirai, T.

    1991-07-01

    Thin films of Y 2O 3, La 2O 3, CeO 2, PrO 2, Nd 2O 3 and Sm 2O 3 were synthesized by injecting ultrasonically atomized metal nitrate solutions into a high temperature inductively coupled RF plasma above 5000 K generated under atmospheric pressure (the spray-ICP technique). Fused quartz plates and single crystal sapphire plates giving no background X-ray reflection peaks were used as substrates. About 0.4 μm thick transparent films could be prepared by 10 min of running. The films of CeO 2 and PrO 2, both belonging to the cubic flourite type, revealed (100) and (111) orientations, respectively. With the remaining oxides having A (hexagonal), B (monoclinic) and C (cubic) rare-earth structures, film orientations were A (001) for La 2O 3, A (001)+C (111) for Nd 2O 3, and C (111) for Y 2O 3. Sm 2O 3 films were composed of a phase with C (111) and an extra phase with an orientation close to (001) of A-Sm 2O 3 or its equivalent, (20 overline1) of B-Sm 2O 3.

  10. Grey fuzzy logic approach for the optimization of DLC thin film coating process parameters using PACVD technique

    Science.gov (United States)

    Ghadai, R. K.; Das, P. P.; Shivakoti, I.; Mondal, S. C.; Swain, B. P.

    2017-07-01

    Diamond-like carbon (DLC) coatings are widely used in medical, manufacturing and aerospace industries due to their excellent mechanical, biological, optical and tribological properties. The selection of optimal process parameters for efficient characteristics of DLC film is always a challenging issue for the materials science researchers. The optimal combination of the process parameters involved in the deposition of DLC films provide a better result, which subsequently help other researchers to choose the process parameters. In the present work Grey Relation Analysis (GRA) and Fuzzy-logic are being used for the optimization of process parameters in DLC film coating by using plasma assist chemical vapour deposition (PACVD) technique. The bias voltage, bias frequency, deposition pressure, gas composition are considered as input process parameters and hardness (GPa), Young's modulus (GPa), ratio between diamond to graphic fraction, (Id/Ig) ratio are considered as response parameters. The input parameters are optimized by grey fuzzy analysis. The contribution of individual input parameter is done by ANOVA. In this analysis found that bias voltage having the least influence and gas composition has highest influence in the PACVD deposited DLC films. The grey fuzzy analysis results indicated that optimum results for bias voltage, bias frequency, deposition pressure, gas composition for the DLC thin films are -50 V, 6 kHz, 4 μbar and 60:40 % respectively.

  11. Thin film superfluid optomechanics

    CERN Document Server

    Baker, Christopher G; McAuslan, David L; Sachkou, Yauhen; He, Xin; Bowen, Warwick P

    2016-01-01

    Excitations in superfluid helium represent attractive mechanical degrees of freedom for cavity optomechanics schemes. Here we numerically and analytically investigate the properties of optomechanical resonators formed by thin films of superfluid $^4$He covering micrometer-scale whispering gallery mode cavities. We predict that through proper optimization of the interaction between film and optical field, large optomechanical coupling rates $g_0>2\\pi \\times 100$ kHz and single photon cooperativities $C_0>10$ are achievable. Our analytical model reveals the unconventional behaviour of these thin films, such as thicker and heavier films exhibiting smaller effective mass and larger zero point motion. The optomechanical system outlined here provides access to unusual regimes such as $g_0>\\Omega_M$ and opens the prospect of laser cooling a liquid into its quantum ground state.

  12. Thin film ceramic thermocouples

    Science.gov (United States)

    Gregory, Otto (Inventor); Fralick, Gustave (Inventor); Wrbanek, John (Inventor); You, Tao (Inventor)

    2011-01-01

    A thin film ceramic thermocouple (10) having two ceramic thermocouple (12, 14) that are in contact with each other in at least on point to form a junction, and wherein each element was prepared in a different oxygen/nitrogen/argon plasma. Since each element is prepared under different plasma conditions, they have different electrical conductivity and different charge carrier concentration. The thin film thermocouple (10) can be transparent. A versatile ceramic sensor system having an RTD heat flux sensor can be combined with a thermocouple and a strain sensor to yield a multifunctional ceramic sensor array. The transparent ceramic temperature sensor that could ultimately be used for calibration of optical sensors.

  13. Biomimetic thin film deposition

    Science.gov (United States)

    Rieke, P. C.; Campbell, A. A.; Tarasevich, B. J.; Fryxell, G. E.; Bentjen, S. B.

    1991-04-01

    Surfaces derivatized with organic functional groups were used to promote the deposition of thin films of inorganic minerals. These derivatized surfaces were designed to mimic the nucleation proteins that control mineral deposition during formation of bone, shell, and other hard tissues in living organisms. By the use of derivatized substrates control was obtained over the phase of mineral deposited, the orientation of the crystal lattice and the location of deposition. These features are of considerable importance in many technically important thin films, coatings, and composite materials. Methods of derivatizing surfaces are considered and examples of controlled mineral deposition are presented.

  14. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    OpenAIRE

    Pinheiro,Wagner Anacleto; Falcão, Vivienne Denise; Cruz,Leila Rosa de Oliveira; Ferreira,Carlos Luiz

    2006-01-01

    Unlike other thin film deposition techniques, close spaced sublimation (CSS) requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate) and a sintered C...

  15. Effect of zinc doping on the structural and magnetic properties of nickel ferrite thin films fabricated by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Raghavender, A.T., E-mail: raghavi9@gmail.com [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Hoa Hong, Nguyen, E-mail: nguyenhong@snu.ac.kr [Nanomagnetism Laboratory, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Chikoidze, Ekaterina; Dumont, Yves [Laboratoire GeMAC, UMR 8635 CNRS—Université de Versailles, 45 Avenue des Etats-Unis, 78035 Versailles Cedex (France); Kurisu, Makio [Department of Physics, Graduate School of Science and Engineering, Ehime University, Matsuyama 790-8577 (Japan)

    2015-03-15

    Zinc, as known as non-magnetic element, has been doped into nickel ferrite under thin film form to modify its structural and magnetic properties. Laser ablated Ni{sub 1−x}Zn{sub x}Fe{sub 2}O{sub 4} (0.0≤x≤0.5) thin films grown on R-cut Al{sub 2}O{sub 3} (0001) substrates using pulsed laser deposition (PLD) technique are single phase with (l l l) orientation, and they are strongly room temperature ferromagnetic. Compared to other Ni–Zn ferrite thin films we observed the enhancement in coercivity H{sub c}. Higher H{sub c} thin films can be used as potential candidates for modern miniaturization of electronic devices. - Highlights: • Laser ablated ferrite thin films. • Enhanced structural and magnetic properties of Ni–Zn ferrite thin films. • Ni–Zn Ferrite films are strongly room temperature ferromagnetic. • Higher coercivity in fabricated films.

  16. Thin film metal-oxides

    CERN Document Server

    Ramanathan, Shriram

    2009-01-01

    Presents an account of the fundamental structure-property relations in oxide thin films. This title discusses the functional properties of thin film oxides in the context of applications in the electronics and renewable energy technologies.

  17. Thin films for material engineering

    Science.gov (United States)

    Wasa, Kiyotaka

    2016-07-01

    Thin films are defined as two-dimensional materials formed by condensing one by one atomic/molecular/ionic species of matter in contrast to bulk three-dimensional sintered ceramics. They are grown through atomic collisional chemical reaction on a substrate surface. Thin film growth processes are fascinating for developing innovative exotic materials. On the basis of my long research on sputtering deposition, this paper firstly describes the kinetic energy effect of sputtered adatoms on thin film growth and discusses on a possibility of room-temperature growth of cubic diamond crystallites and the perovskite thin films of binary compound PbTiO3. Secondly, high-performance sputtered ferroelectric thin films with extraordinary excellent crystallinity compatible with MBE deposited thin films are described in relation to a possible application for thin-film MEMS. Finally, the present thin-film technologies are discussed in terms of a future material science and engineering.

  18. Thin film growing by the laser ablation technique: possibilities for growing of dosimetric materials; Crecimiento de capas delgadas por la tecnica de ablacion laser: posibilidades para crecimiento de materiales dosimetricos

    Energy Technology Data Exchange (ETDEWEB)

    Rojas R, E.M.; Melo M, M.; Enriquez Z, E.; Fernandez G, M.; Haro P, E.; Hernandez P, J.L. [UAM-I, Laboratorio de Optica Cuantica, 09340 Mexico D.F. (Mexico)

    2005-07-01

    In this talk we will present the basics about the laser ablation technique and how it is used for thin film growing, either as a single film or a stack of thin films, as well as some methods to characterize in real time the film thickness. Finally, we will discuss the possibilities of using laser ablation for growing thin films with applications to dosimetry. (Author)

  19. NMR characterization of thin films

    Science.gov (United States)

    Gerald, II, Rex E.; Klingler, Robert J.; Rathke, Jerome W.; Diaz, Rocio; Vukovic, Lela

    2008-11-25

    A method, apparatus, and system for characterizing thin film materials. The method, apparatus, and system includes a container for receiving a starting material, applying a gravitational force, a magnetic force, and an electric force or combinations thereof to at least the starting material, forming a thin film material, sensing an NMR signal from the thin film material and analyzing the NMR signal to characterize the thin film of material.

  20. Transparent conducting properties of Ni doped zinc oxide thin films prepared by a facile spray pyrolysis technique using perfume atomizer

    Energy Technology Data Exchange (ETDEWEB)

    Bouaoud, A.; Rmili, A.; Ouachtari, F.; Louardi, A.; Chtouki, T. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Elidrissi, B., E-mail: e.bachir@mailcity.com [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Erguig, H. [Laboratoire des Hautes Energies, Sciences de l' Ingenierie et Reacteurs (LHESIR), Equipe Ingenierie et Materiaux (INMA), Departement de Physique, Faculte des Sciences, Kenitra (Morocco); Ecole Nationale des Sciences Appliquees de Kenitra (ENSAK) (Morocco)

    2013-01-15

    Undoped and Ni doped zinc oxide (Ni-ZnO) thin films were prepared by a facile spray pyrolysis technique using perfume atomizer from aqueous solution of anhydrous zinc acetate (Zn(CH{sub 3}COOH){sub 2} and hexahydrated nickel chloride (NiCl{sub 2}{center_dot}6H{sub 2}O) as sources of zinc and nickel, respectively. The films were deposited onto the amorphous glass substrates kept at (450 Degree-Sign C). The effect of the [Ni]/[Zn] ratio on the structural, morphological, optical and electrical properties of Ni doped ZnO thin film was studied. It was found from X-ray diffraction (XRD) analysis that both the undoped and Ni doped ZnO films were crystallized in the hexagonal structure with a preferred orientation of the crystallites along the [002] direction perpendicular to the substrate. The scanning electron microscopy (SEM) images showed a relatively dense surface structure composed of crystallites in the spherical form whose average size decreases when the [Ni]/[Zn] ratio increases. The optical study showed that all the films were highly transparent. The optical transmittance in the visible region varied between 75 and 85%, depending on the dopant concentrations. The variation of the band gap versus the [Ni]/[Zn] ratio showed that the energy gap decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02 and then increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. The films obtained with the [Ni]/[Zn] ratio = 0.02 showed minimum resistivity of 2 Multiplication-Sign 10{sup -3} {Omega} cm at room temperature. -- Highlights: Black-Right-Pointing-Pointer The optical transmittance of Ni doped ZnO varies between 75 and 85%. Black-Right-Pointing-Pointer The energy gap of these films decreases from 2.95 to 2.72 eV as the [Ni]/[Zn] ratio increases from 0 to 0.02. Black-Right-Pointing-Pointer The energy gap increases to reach 3.22 eV for [Ni]/[Zn] = 0.04. Black-Right-Pointing-Pointer The films obtained with [Ni]/[Zn] ratio = 0.02 show minimum resistivity of 2

  1. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Weisenbach, L.A.; Anderson, M.T. [Sandia National Laboratories, Albuquerque, NM (United States)] [and others

    1995-05-01

    This project is developing inorganic thin films as membranes for gas separation applications, and as discriminating coatings for liquid-phase chemical sensors. Our goal is to synthesize these coatings with tailored porosity and surface chemistry on porous substrates and on acoustic and optical sensors. Molecular sieve films offer the possibility of performing separations involving hydrogen, air, and natural gas constituents at elevated temperatures with very high separation factors. We are focusing on improving permeability and molecular sieve properties of crystalline zeolitic membranes made by hydrothermally reacting layered multicomponent sol-gel films deposited on mesoporous substrates. We also used acoustic plate mode (APM) oscillator and surface plasmon resonance (SPR) sensor elements as substrates for sol-gel films, and have both used these modified sensors to determine physical properties of the films and have determined the sensitivity and selectivity of these sensors to aqueous chemical species.

  2. Zapping thin film transistors

    NARCIS (Netherlands)

    Golo-Tosic, N.; Kuper, F.G.; Mouthaan, A.J.

    2002-01-01

    It was expected that hydrogenated amorphous silicon thin film transistors (alpha-Si:H TFTs) behave similarly to crystalline silicon transistors under electrostatic discharge (ESD) stress. It will be disproved in this paper. This knowledge is necessary in the design of the transistors used in a ESD

  3. Effects of discharge power on the structural and optical properties of TGZO thin films prepared by RF magnetron sputtering technique

    Science.gov (United States)

    Gu, Jin-hua; Lu, Zhou; Zhong, Zhi-you; Long, Lu; Long, Hao

    2016-05-01

    The transparent semiconductors of Ti and Ga-incorporated ZnO (TGZO) thin films were prepared by radio frequency (RF) magnetron sputtering onto glass substrates. The effects of discharge power on the physical properties of thin films are studied. Experimental results show that all nanocrystalline TGZO thin films possess preferential orientation along the (002) plane. The discharge power significantly affects the crystal structure and optical properties of thin films. When the discharge power is 200 W, the TGZO thin film has the optimal crystalline quality and optical properties, with the narrowest full width at half-maximum ( FWHM) of 1.76×10-3 rad, the largest average grain size of 82.4 nm and the highest average transmittance of 84.3% in the visible range. The optical gaps of thin films are estimated by the Tauc's relation and observed to increase firstly and then decrease with the increase of the discharge power. In addition, the optical parameters, including refractive index, extinction coefficient, dielectric function and dissipation factor of the thin films, are determined by optical characterization methods. The dispersion behavior of the refractive index is also analyzed using the Sellmeier's dispersion model.

  4. Effect of Sm doping on the physical properties of ZnO thin films deposited by spray pyrolysis technique

    Science.gov (United States)

    Velusamy, P.; Babu, R. Ramesh; Aparna, K. T.

    2017-05-01

    Undoped and Sm doped ZnO thin films have been prepared by chemical spray pyrolysis method on a glass substrate at 430°C. The physical properties of undoped and Sm doped ZnO thin films are characterized by XRD, FE-SEM, UV-VIS spectroscopy, Hall measurement and PL analysis. XRD pattern reveals that all the films are polycrystalline nature. The FE-SEM study of CdO shows the smooth and uniform surface with the spherical shaped particle. The electrical study reveals the n-type semiconductor and the optical study shows that Sm doped ZnO thin films about 92% transparency and optical band gap vary between 3.266-3.276 eV. Sm doped ZnO thin films have strong green emission behavior.

  5. Effect of Uniform Decoration of Ag2S Nanoparticles on Physical Properties of Granular TiO2 Thin Films Synthesized by Using Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    R.A. Wagh

    2016-12-01

    Full Text Available In this work, we report the effect of uniform decoration of silver sulphide (Ag2S nanoparticles on physical properties of titanium dioxide (TiO2 nanocrystalline thin films synthesized by using a spin coating technique by preparing TiO2 gel using P-25 TiO2, ethanol, acetyl acetone and p-hydroxybenzoic acid. Chemical bath deposited layer of Ag2S particles enhance the properties of TiO2 nanocrystalline thin films. The optical study reveals that the absorption edge shifts towards the visible region compared with the pure TiO2 thin film due to the incorporation of Ag2S nanoparticles into TiO2 nanocrystalline thin films.

  6. Structural and kinetic studies of metal hydride hydrogen storage materials using thin film deposition and characterization techniques

    Science.gov (United States)

    Kelly, Stephen Thomas

    Hydrogen makes an attractive energy carrier for many reasons. It is an abundant chemical fuel that can be produced from a wide variety of sources and stored for very long periods of time. When used in a fuel cell, hydrogen emits only water at the point of use, making it very attractive for mobile applications such as in an automobile. Metal hydrides are promising candidates for on-board reversible hydrogen storage in mobile applications due to their very high volumetric storage capacities---in most cases exceeding even that of liquid hydrogen. The United States Department of Energy (DOE) has set fuel system targets for an automotive hydrogen storage system, but as of yet no single material meets all the requirements. In particular, slow reaction kinetics and/or inappropriate thermodynamics plague many metal hydride hydrogen storage materials. In order to engineer a practical material that meets the DOE targets, we need a detailed understanding of the kinetic and thermodynamic properties of these materials during the phase change. In this work I employed sputter deposited thin films as a platform to study materials with highly controlled chemistry, microstructure and catalyst placement using thin film characterization techniques such as in situ x-ray diffraction (XRD) and neutron reflectivity. I observed kinetic limitations in the destabilized Mg2Si system due to the slow diffusion of the host Mg and Si atoms while forming separate MgH2 and Si phases. Conversely, I observed that the presence of Al in the Mg/Al system inhibits hydrogen diffusion while the host Mg and Al atoms interdiffuse readily, allowing the material to fall into a kinetic and/or thermodynamic trap by forming intermetallic compounds such as Mg17Al 12. By using in situ XRD to analyze epitaxial Mg films grown on (001) oriented Al2O3 substrates I observed hydride growth consistent with a model of a planar hydride layer growing into an existing metal layer. Subsequent film cycling changes the hydrogen

  7. Post annealing effects on structural, optical and electrical properties of CuSbS2 thin films fabricated by combinatorial thermal evaporation technique

    Science.gov (United States)

    Hussain, Arshad; Ahmed, R.; Ali, N.; Butt, Faheem K.; Shaari, A.; Shamsuri, W. N. Wan; Khenata, R.; Prakash, Deo; Verma, K. D.

    2016-01-01

    Copper antimony sulfide (CuSbS2) thin films were fabricated by combinatorial thermal evaporation technique on well cleaned glass substrates. The deposited thin films were annealed in argon gas atmosphere for 1 h at temperature range of 150-350 °C. The effect of annealing temperature on structural, morphological, optical and electrical properties was studied using the different characterization techniques. The XRD analysis confirmed the crystallinity of the obtained samples with CuSbS2 phase in chalcostibite structure. Optical properties of the deposited samples showed good response in the visible and NIR region, envisaging the potential of CuSbS2 as an efficient solar cell material. The optical band gap of CuSbS2 thin films was measured to be 1.5 eV. A decrease (12.5-1.43 KΩ-cm) was observed for the resistivity of samples with the increase in annealing temperature. The plot of sheet resistance with annealing temperature confirmed the uniformity of samples. These thin films were found as a sustainable substitute material for the absorber layer in conventional thin film solar cell system, because of the abundance and low cost of its constituent elements. This study opens new avenue of research for scalable synthesis of CuSbS2 thin films for solar cell and photovoltaic applications.

  8. Application of Response Surface Methodology in Development of Sirolimus Liposomes Prepared by Thin Film Hydration Technique

    Directory of Open Access Journals (Sweden)

    Saeed Ghanbarzadeh

    2013-04-01

    Full Text Available Introduction: The present investigation was aimed to optimize the formulating process of sirolimus liposomes by thin film hydration method. Methods: In this study, a 32 factorial design method was used to investigate the influence of two independent variables in the preparation of sirolimus liposomes. The dipalmitoylphosphatidylcholine (DPPC /Cholesterol (Chol and dioleoyl phosphoethanolamine(DOPE /DPPC molar ratios were selected as the independent variables. Particle size (PS and Encapsulation Efficiency (EE % were selected as the dependent variables. To separate the un-encapsulated drug, dialysis method was used. Drug analysis was performed with a validated RP-HPLC method. Results: Using response surface methodology and based on the coefficient values obtained for independent variables in the regression equations, it was clear that the DPPC/Chol molar ratio was the major contributing variable in particle size and EE %. The use of a statistical approach allowed us to see individual and/or interaction effects of influencing parameters in order to obtain liposomes with desired properties and to determine the optimum experimental conditions that lead to the enhancement of characteristics. In the prediction of PS and EE % values, the average percent errors are found to be as 3.59 and 4.09%. This value is sufficiently low to confirm the high predictive power of model. Conclusion: Experimental results show that the observed responses were in close agreement with the predicted values and this demonstrates the reliability of the optimization procedure in prediction of PS and EE % in sirolimus liposomes preparation.

  9. Advances in the Electrical Connection Technique of Thin Film Solar Cells on a Titanium Substrate

    Science.gov (United States)

    Zwanenburg, R.

    2008-09-01

    Dutch Space has developed a new solar blanket (the MATRIX) that consists of just Thin Film (TF) solar cells made on titanium substrates. The cells are electrically connected via a number of contact points (pressure contact only). It was found that degradation of these electrical contacts was mainly caused by a too low contact pressure. Measures have been taken to increase the contact pressure and number of contact points. An alternative contact method using conductive adhesive has been tested, but this solution failed as cell delamination from the substrate underneath the bonding spots was observed after thermal cycling tests. An improved contact system with four contact points along the cell width was implemented in an assembly of 24 new TF solar cells. Thermal cycling tests showed a stable performance of the electrical connection. Further improvements are foreseen using a new cell layout with 8 contact points. Unfortunately, cell delamination was observed after the thermal cycling testing. The adhesion between the cell coating and the molybdenum undercoat needs to be improved for the future production of TF cells.

  10. Role of target-substrate distance on the growth of CuInSe{sub 2} thin films by pulsed laser ablation technique

    Energy Technology Data Exchange (ETDEWEB)

    Rawat, Kusum; Dhruvashi [Department of Electronics, Zakir Husain Delhi College, University of Delhi, Delhi, 110002 (India); Department of Electronic Science, University of Delhi South Campus, Delhi 110021 (India); Shishodia, P. K., E-mail: shishodiaprem@gmail.com [Department of Electronics, Zakir Husain Delhi College, University of Delhi, Delhi, 110002 (India)

    2016-05-06

    CuInSe{sub 2} thin films have been deposited on corning glass substrates by pulsed laser ablation technique. The chamber pressure and substrate temperature was maintained at 1 × 10{sup −6} torr and 550°C respectively during deposition of the films. The influence of target to substrate (T-S) distance on the structural and optical properties of thin films have been investigated by grazing incidence x-ray diffraction, Raman spectroscopy, scanning electron microscope and UV-Vis-NIR spectroscopy. The study reveals that thin films crystallized in a chalcopyrite structure with highly preferential orientation along (112) plane. Optimum T-S distance has been attained for the growth of thin films with large grain size. An intense Raman peak at 174 cm{sup −1} corresponding to dominant A{sub 1} vibration mode is gradually shifted to smaller wavenumber with the increase in T-S distance. The optical bandgap energy of the films was evaluated and found to vary with the T-S distance. The bandgap tailing was observed to obey the Urbach rule and the Urbach energy was also calculated for the films. Scanning electron micrographs depicts uniform densely packed grains and EDAX studies revealed the elemental composition of CuInSe{sub 2} thin films.

  11. Thin-film growth and patterning techniques for small molecular organic compounds used in optoelectronic device applications.

    Science.gov (United States)

    Biswas, Shaurjo; Shalev, Olga; Shtein, Max

    2013-01-01

    Rapid advances in research and development in organic electronics have resulted in many exciting discoveries and applications, including organic light-emitting devices for information display and illumination, solar cells, photodetectors, chemosensors, and logic. Organic optoelectronic materials are broadly classified as polymeric or small molecular. For the latter category, solvent-free deposition techniques are generally preferred to form well-defined interfaces and improve device performance. This article reviews several deposition and patterning methods for small molecular thin films and devices, including organic molecular beam deposition, vacuum thermal evaporation, organic vapor phase deposition, and organic vapor jet printing, and compares them to several other methods that have been proposed recently. We hope this review provides a compact but informative summary of the state of the art in organic device processing and addresses the various techniques' governing physical principles.

  12. [Spectral emissivity of thin films].

    Science.gov (United States)

    Zhong, D

    2001-02-01

    In this paper, the contribution of multiple reflections in thin film to the spectral emissivity of thin films of low absorption is discussed. The expression of emissivity of thin films derived here is related to the thin film thickness d and the optical constants n(lambda) and k(lambda). It is shown that in the special case d-->infinity the emissivity of thin films is equivalent to that of the bulk material. Realistic numerical and more precise general numerical results for the dependence of the emissivity on d, n(lambda) and k(lambda) are given.

  13. Environmental stability of solution processed Al-doped ZnO naoparticulate thin films using surface modification technique

    Science.gov (United States)

    Vunnam, Swathi; Ankireddy, Krishnamraju; Kellar, Jon; Cross, William

    2014-12-01

    The environmental stability of solution processed Al-doped ZnO (AZO) thin films was enhanced by functionalizing the film surface with a thin self-assembled molecular layer. Functionalization of AZO films was performed using two types of molecules having identical 12-carbon alkyl chain termination but different functional groups: dodecanethiol (DDT) and dodecanoic acid (DDA). Surface modified AZO films were examined using electrical resistivity measurements, contact angle measurements and quantitative nanomechanical property mapping atomic force microscopy. The hydrophobic layer inhibits the penetration of oxygen and water into the AZO's grain boundaries thus significantly increasing the environmental stability over unmodified AZO. Surface modified AZO films using DDT exhibited lower electrical resistivity compared to DDA functionalized AZO films. Our study demonstrates a new approach for improving the physical properties of oxide based nanoparticulate films for device applications.

  14. Structural, nanomechanical and variable range hopping conduction behavior of nanocrystalline carbon thin films deposited by the ambient environment assisted filtered cathodic jet carbon arc technique

    Energy Technology Data Exchange (ETDEWEB)

    Panwar, O.S., E-mail: ospanwar@mail.nplindia.ernet.in [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Rawal, Ishpal; Tripathi, R.K. [Polymorphic Carbon Thin Films Group, Physics of Energy Harvesting Division, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Srivastava, A.K. [Electron and Ion Microscopy, Sophisticated and Analytical Instruments, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India); Kumar, Mahesh [Ultrafast Opto-Electronics and Tetrahertz Photonics Group, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi - 110 012 (India)

    2015-04-15

    Highlights: • Nanocrystalline carbon thin films are grown by filtered cathodic jet carbon arc process. • Effect of gaseous environment on the properties of carbon films has been studied. • The structural and nanomechanical properties of carbon thin films have been studied. • The VRH conduction behavior in nanocrystalline carbon thin films has been studied. - Abstract: This paper reports the deposition and characterization of nanocrystalline carbon thin films by filtered cathodic jet carbon arc technique assisted with three different gaseous environments of helium, nitrogen and hydrogen. All the films are nanocrystalline in nature as observed from the high resolution transmission electron microscopic (HRTEM) measurements, which suggests that the nanocrystallites of size ∼10–50 nm are embedded though out the amorphous matrix. X-ray photoelectron spectroscopic studies suggest that the film deposited under the nitrogen gaseous environment has the highest sp{sup 3}/sp{sup 2} ratio accompanied with the highest hardness of ∼18.34 GPa observed from the nanoindentation technique. The film deposited under the helium gaseous environment has the highest ratio of the area under the Raman D peak to G peak (A{sub D}/A{sub G}) and the highest conductivity (∼2.23 S/cm) at room temperature, whereas, the film deposited under the hydrogen environment has the lowest conductivity value (2.27 × 10{sup −7} S/cm). The temperature dependent dc conduction behavior of all the nanocrystalline carbon thin films has been analyzed in the light of Mott’s variable range hopping (VRH) conduction mechanism and observed that all the films obey three dimension VRH conduction mechanism for the charge transport.

  15. Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

    Directory of Open Access Journals (Sweden)

    N. Poornima

    2013-01-01

    Full Text Available This work projects photoluminescence (PL as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE at 380 nm and the deep level emission (DLE at ~500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE (/ can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of / and resistivity for samples prepared under different deposition conditions is similar in nature. / was always less than resistivity by an order for all samples. Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

  16. Characterizations of Cuprous Oxide Thin Films Prepared by Sol-Gel Spin Coating Technique with Different Additives for the Photoelectrochemical Solar Cell

    Directory of Open Access Journals (Sweden)

    D. S. C. Halin

    2014-01-01

    Full Text Available Cuprous oxide (Cu2O thin films were deposited onto indium tin oxide (ITO coated glass substrate by sol-gel spin coating technique using different additives, namely, polyethylene glycol and ethylene glycol. It was found that the organic additives added had a significant influence on the formation of Cu2O films and lead to different microstructures and optical properties. The films were characterized by X-ray diffraction (XRD, field emission scanning electron microscopy (FESEM, and ultraviolet-visible spectroscopy (UV-Vis. Based on the FESEM micrographs, the grain size of film prepared using polyethylene glycol additive has smaller grains of about 83 nm with irregular shapes. The highest optical absorbance film was obtained by the addition of polyethylene glycol. The Cu2O thin films were used as a working electrode in the application of photoelectrochemical solar cell (PESC.

  17. Thin film superconductor magnetic bearings

    Science.gov (United States)

    Weinberger, Bernard R.

    1995-12-26

    A superconductor magnetic bearing includes a shaft (10) that is subject to a load (L) and rotatable around an axis of rotation, a magnet (12) mounted to the shaft, and a stator (14) in proximity to the shaft. The stator (14) has a superconductor thin film assembly (16) positioned to interact with the magnet (12) to produce a levitation force on the shaft (10) that supports the load (L). The thin film assembly (16) includes at least two superconductor thin films (18) and at least one substrate (20). Each thin film (18) is positioned on a substrate (20) and all the thin films are positioned such that an applied magnetic field from the magnet (12) passes through all the thin films. A similar bearing in which the thin film assembly (16) is mounted on the shaft (10) and the magnet (12) is part of the stator (14) also can be constructed.

  18. Carbon nanotube based transparent conductive thin films.

    Science.gov (United States)

    Yu, X; Rajamani, R; Stelson, K A; Cui, T

    2006-07-01

    Carbon nanotube (CNT) based optically transparent and electrically conductive thin films are fabricated on plastic substrates in this study. Single-walled carbon nanotubes (SWNTs) are chemically treated with a mixture of concentrated sulfuric acid and nitric acid before being dispersed in aqueous surfactant-contained solutions. SWNT thin films are prepared from the stable SWNT solutions using wet coating techniques. The 100 nm thick SWNT thin film exhibits a surface resistivity of 6 kohms/square nanometer with an average transmittance of 88% on the visible light range, which is three times better than the films prepared from the high purity as-received SWNTs.

  19. Raman spectroscopy of Cu-Sn-S ternary compound thin films prepared by the low-cost spray-pyrolysis technique.

    Science.gov (United States)

    Brus, Viktor V; Babichuk, Ivan S; Orletskyi, Ivan G; Maryanchuk, Pavlo D; Yukhymchuk, Volodymyr O; Dzhagan, Volodymyr M; Yanchuk, Igor B; Solovan, Mykhailo M; Babichuk, Iryna V

    2016-04-20

    Cu-Sn-S (CTS) thin films were deposited onto bare and molybdenum (Mo) coated glass substrates by means of the spray pyrolysis technique under different conditions. The CTS thin films obtained are shown, by means of Raman spectroscopy, to consist of two main phases: Cu2SnS3 and Cu3SnS4 as well as of the secondary phase of Cu2-xS. The electrical conductivity of the spray-deposited p-type CTS thin films under investigation is determined by two shallow acceptor levels: Ev+0.07  eV at T334  K. The material of the CTS thin films was established to be a direct-band semiconductor with the bandgap Eg=1.89  eV. The SEM and x-ray energy dispersive analysis show the surface and cross section of the CTS thin film deposited onto molybdenum-coated glass ceramics substrate with the actual atomic ratios of Cu:Sn:S being 2.9:1:2.64, which is in good agreement with the Raman spectra. Also, a small content of residual Cl atoms was found in the CTS thin films under investigation as the by-product of the pyrolytic reactions.

  20. Chiral atomically thin films

    Science.gov (United States)

    Kim, Cheol-Joo; Sánchez-Castillo, A.; Ziegler, Zack; Ogawa, Yui; Noguez, Cecilia; Park, Jiwoong

    2016-06-01

    Chiral materials possess left- and right-handed counterparts linked by mirror symmetry. These materials are useful for advanced applications in polarization optics, stereochemistry and spintronics. In particular, the realization of spatially uniform chiral films with atomic-scale control of their handedness could provide a powerful means for developing nanodevices with novel chiral properties. However, previous approaches based on natural or grown films, or arrays of fabricated building blocks, could not offer a direct means to program intrinsic chiral properties of the film on the atomic scale. Here, we report a chiral stacking approach, where two-dimensional materials are positioned layer-by-layer with precise control of the interlayer rotation (θ) and polarity, resulting in tunable chiral properties of the final stack. Using this method, we produce left- and right-handed bilayer graphene, that is, a two-atom-thick chiral film. The film displays one of the highest intrinsic ellipticity values (6.5 deg μm-1) ever reported, and a remarkably strong circular dichroism (CD) with the peak energy and sign tuned by θ and polarity. We show that these chiral properties originate from the large in-plane magnetic moment associated with the interlayer optical transition. Furthermore, we show that we can program the chiral properties of atomically thin films layer-by-layer by producing three-layer graphene films with structurally controlled CD spectra.

  1. Carbon Superatom Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Canning, A. [Cray Research, PSE, EPFL, 1015 Lausanne (Switzerland); Canning, A.; Galli, G. [Institut Romand de Recherche Numerique en Physique des Materiaux (IRRMA), IN-Ecublens, 1015 Lausanne (Switzerland); Kim, J. [Department of Physics, The Ohio State University, Columbus, Ohio 43210 (United States)

    1997-06-01

    We report on quantum molecular dynamics simulations of C{sub 28} deposition on a semiconducting surface. Our results show that under certain deposition conditions C{sub 28} {close_quote}s act as building blocks on a nanometer scale to form a thin film of nearly defect-free molecules. The C{sub 28} {close_quote}s behave as carbon superatoms, with the majority of them being threefold or fourfold coordinated, similar to carbon atoms in amorphous systems. The microscopic structure of the deposited film supports recent suggestions about the stability of a new form of carbon, the hyperdiamond solid. {copyright} {ital 1997} {ital The American Physical Society}

  2. Comparison of Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films fabricated by the spin coating and radio frequency magnetron techniques

    Energy Technology Data Exchange (ETDEWEB)

    Jafer, R.M.; Yousif, A. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Department of Physics, Faculty of Education, University of Khartoum, P.O. Box 321, Postal Code 11115 Omdurman (Sudan); Kumar, Vinod [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Photovoltaic Laboratory, Centre for Energy Studies, Indian Institute of Technology Delhi, New Delhi 110016 (India); Pathak, Trilok Kumar [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Purohit, L.P. [Semiconductor Physics Lab, Department of Physics, Gurukula Kangri University, Haridwar (India); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Coetsee, E., E-mail: CoetseeE@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

    2016-09-15

    The reactive radio-frequency (RF) magnetron sputtering and spin coating fabrication techniques were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. The two techniques were analysed and compared as part of investigations being done on the application of down-conversion materials for a Si solar cell. The morphology, structural and optical properties of these thin films were investigated. The X-ray diffraction results of the thin films fabricated by both techniques showed cubic structures with different space groups. The optical properties showed different results because the Bi{sup 3+} ion is very sensitive towards its environment. The luminescence results for the thin film fabricated by the spin coating technique is very similar to the luminescence observed in the powder form. It showed three obvious emission bands in the blue and green regions centered at about 360, 410 and 495 nm. These emissions were related to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in the two different sites of the Y{sub 2}O{sub 3} matrix with I a-3(206) space group. Whereas the thin film fabricated by the radio frequency magnetron technique showed a broad single emission band in the blue region centered at about 416 nm. This was assigned to the {sup 3}P{sub 1}–{sup 1}S{sub 0} transition of the Bi{sup 3+} ion situated in one of the Y{sub 2}O{sub 3} matrix's sites with a Fm-3 (225) space group. The spin coating fabrication technique is suggested to be the best technique to fabricate the Y{sub 2}O{sub 3}:Bi{sup 3+} phosphor thin films. - Highlights: • RF sputtering and spin coating were used to fabricate Y{sub 2−x}O{sub 3}:Bi{sub x=0.5%} phosphor thin films. • XRD results of the two films showed cubic structures with different space groups. • PL showed different emission for the Bi{sup 3+} ions in the two films. • Three emission bands in the blue and green regions centered at about 360, 410 and 495 nm. • RF

  3. Environmental stability of solution processed Al-doped ZnO naoparticulate thin films using surface modification technique

    Energy Technology Data Exchange (ETDEWEB)

    Vunnam, Swathi, E-mail: swathivunnam@gmail.com [Program of Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Ankireddy, Krishnamraju; Kellar, Jon [Program of Materials Engineering and Science, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States); Cross, William, E-mail: William.Cross@sdsmt.edu [Program of Materials Engineering and Science, South Dakota School of Mines and Technology, Rapid City, SD 57701 (United States)

    2014-12-15

    Graphical abstract: - Highlights: • AZO nanoparticulate films were deposited using ultrasonic spray deposition. • Functionalization of solution processed AZO thin films was carried out. • Contact angles and QNM AFM results confirmed the existence of molecular layers. • Environmental stability of AZO films greatly increased with surface modification. - Abstract: The environmental stability of solution processed Al-doped ZnO (AZO) thin films was enhanced by functionalizing the film surface with a thin self-assembled molecular layer. Functionalization of AZO films was performed using two types of molecules having identical 12-carbon alkyl chain termination but different functional groups: dodecanethiol (DDT) and dodecanoic acid (DDA). Surface modified AZO films were examined using electrical resistivity measurements, contact angle measurements and quantitative nanomechanical property mapping atomic force microscopy. The hydrophobic layer inhibits the penetration of oxygen and water into the AZO's grain boundaries thus significantly increasing the environmental stability over unmodified AZO. Surface modified AZO films using DDT exhibited lower electrical resistivity compared to DDA functionalized AZO films. Our study demonstrates a new approach for improving the physical properties of oxide based nanoparticulate films for device applications.

  4. Concentration influence on structural and optical properties of SnO2 thin films synthesized by the spin coating technique.

    Science.gov (United States)

    Belhamri, Soumia; Hamdadou, Nasr-Eddine

    2016-10-01

    Tin dioxide is an n-type semiconductor, with wide band gap 3.6 eV and special properties such as high optical transmission in the visible range, the infrared reflection and chemical stability. The objective of our work is to study the effect of solution concentration on the properties of SnO2 thin films, which were deposited on glass substrate by sol-gel spin coating technique and characterized by X-ray diffraction, UV-visible spectroscopy after annealing for one hour at 500°C. X ray diffraction spectra (XRD) showed that the films deposited at different concentrations (0.7 mol/l, 1 mol/l, 1.5 mol/l) are polycrystalline with a rutile type tetragonal. The grains have two preferred orientations along the directions (110) and (101) corresponding to 2θ = 26,744° and 34,113° respectively. We have also noted that the grain size change between 20 and 40 nm. The peak of diffraction becomes less intense when the solution concentration is more than 0.7 mol / l. The opticall transmittance of the films in the visible spectrum was in the range of 59 - 44%.

  5. Biomimetic thin film deposition

    Energy Technology Data Exchange (ETDEWEB)

    Rieke, P.R.; Graff, G.E.; Campbell, A.A.; Bunker, B.C.; Baskaran, S.; Song, L.; Tarasevich, B.J.; Fryxell, G.E.

    1995-09-01

    Biological mineral deposition for the formation of bone, mollusk shell and other hard tissues provides materials scientists with illustrative materials processing strategies. This presentation will review the key features of biomineralization and how these features can be of technical importance. We have adapted existing knowledge of biomineralization to develop a unique method of depositing inorganic thin films and coating. Our approach to thin film deposition is to modify substrate surfaces to imitate the proteins found in nature that are responsible for controlling mineral deposition. These biomimetic surfaces control the nucleation and growth of the mineral from a supersaturated aqueous solution. This has many processing advantages including simple processing equipment, environmentally benign reagents, uniform coating of highly complex shapes, and enhanced adherence of coating. Many different types of metal oxide, hydroxide, sulfide and phosphate materials with useful mechanical, optical, electronic and biomedical properties can be deposited.

  6. Thin film processes

    CERN Document Server

    Vossen, John L

    1978-01-01

    Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process.

  7. XANES and EXAFS study of the TiN Thin films grown by the pulsed DC sputtering technique assisted by balanced magnetron

    Energy Technology Data Exchange (ETDEWEB)

    Duarte M, A.; Esparza P, H.; Gonzalez V, C. [Centro de Investigacion en Materiales Avanzados, S. C., Miguel de Cervantes 120, Complejo Industrial Chihuahua Chihuahua, Chih. 31109 (Mexico); Yocupicio, I. [Universidad de Sonora, Unidad Regional Sur Lazaro Cardenas No. 100 Col. Fco. Villa, Navojoa, Sonora (Mexico)

    2007-07-01

    A series of different Ti{sub x}N{sub y} thin films were grown by the DC-sputtering technique. The purpose for this work was to study through XAS interpretation, how the different amounts of N{sub 2} during growing thin TiN thin films, affects the stoichiometry of the TiN deposited. Also the results obtained determinate how to interpret the spectra to see the different valences of Ti in TiN, are working. The results were supported with the EXAFS and XANES analysis. This work concludes the adequate conditions for this experiment to obtain TiN as thin film by the DC sputtering assisted by pulsed balanced magnetron at room temperature and concludes which XANES spectra are the finger print for valences of Ti. (Author)

  8. Non-destructive elemental quantification of polymer-embedded thin films using laboratory based X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Cordes, Nikolaus L., E-mail: ncordes@lanl.gov [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Havrilla, George J. [Chemistry Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States); Usov, Igor O.; Obrey, Kimberly A.; Patterson, Brian M. [Materials Science and Technology Division, Los Alamos National Laboratory, PO Box 1663, Los Alamos, NM 87545 (United States)

    2014-11-01

    Thin coatings are important for a variety of industries including energy (e.g., solar cells, batteries), consumer electronics (e.g., LCD displays, computer chips), and medical devices (e.g., implants). These coatings are typically highly uniform layers with thicknesses ranging from a monolayer up to several micrometers. Characterizing these highly uniform coatings for their thickness, elemental composition, and uniformity are all paramount, but obtaining these measurements can be more difficult when the layers are subsurface and must be interrogated non-destructively. The coupling of confocal micro-X-ray fluorescence (confocal MXRF) and nano-scale X-ray computed tomography (nano-CT) together can make these measurements while meeting these sensitivity and resolution specifications necessary for characterizing thin films. Elemental composition, atomic percent, placement, and uniformity can be measured in three dimensions with this integrated approach. Confocal MXRF uses a pair of polycapillary optics to focus and collect X-rays from a material from a 3D spatially restricted confocal volume. Because of the spatial definition, individual layers (of differing composition) can be characterized based upon the elementally characteristic X-ray fluorescence collected for each element. Nano-scale X-ray computed tomography, in comparison, can image the layers at very high resolution (down to 50 nm) to precisely measure the embedded layer thickness. These two techniques must be used together if both the thickness and atomic density of a layer are unknown. This manuscript will demonstrate that it is possible to measure both the atomic percent of an embedded thin film layer and confirm its manufacturing quality. As a proof of principle, a 1.5 atomic percent, 2 μm-thick Ge layer embedded within polymer capsules, used for laser plasma experiments at the Omega Laser Facility and National Ignition Facility, are measured. - Highlights: • Coupling of confocal X-ray fluorescence

  9. OPTICAL PROPERTIES OF Al:ZnO THIN FILM DEPOSITED BY DIFFERENT SOL-GEL TECHNIQUES: ULTRASONIC SPRAY PYROLYSIS AND DIP-COATING

    Directory of Open Access Journals (Sweden)

    Ebru Gungor

    2016-08-01

    Full Text Available Undoped and Al-doped ZnO polycrystalline thin films have been fabricated on glass substrates by using a computer-controlled dip coating (DC and ultrasonic spray pyrolysis (USP systems. The film deposition parameters of DC process were optimized for the samples. In this technique, the substrate was exposed to temperature gradient using a tube furnace. In the study, the other solvent-based technique was conventional USP. The zinc salt and Al salt concentrations in the solution were kept constant as 0.1 M and 2% of Zn salt’s molarity, respectively. The optical properties were compared for the films deposited two different techniques. The optical transmission of Al:ZnO/Glass/Al:ZnO sample dip coated and  the optical transmission of Al:ZnO/Glass sample ultrasonically sprayed were determined higher than 80% in the visible and near infrared region. Experimental optical transmittance spectra of the films in the forms of FilmA/Glass/FilmA and FilmA/glass were used to determine the optical constants. It was observed that the optical band gaps of Al doped ZnO films onto glass substrate were increases with increase of Al content and the absorption edge shifted to the shorter wavelength (blue shift compared with the undoped ZnO thin film.

  10. X-ray absorption spectroscopy of Mn doped ZnO thin films prepared by rf sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Yadav, Ashok Kumar; Jha, S. N.; Bhattacharyya, D., E-mail: dibyendu@barc.gov.in [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, Mumbai – 400 085 (India); Haque, Sk Maidul [Atomic & Molecular Physics Division, Bhabha Atomic Research Centre, VIZAG Centre, Visakhapatnam-530012 (India); Shukla, Dinesh; Choudhary, Ram Janay [UGC DAE Consortium for Scientific Research, Indore-452001 (India)

    2015-11-15

    A set of r.f. sputter deposited ZnO thin films prepared with different Mn doping concentrations have been characterised by Extended X-ray Absorption Fine Structure (EXAFS) and X-ray Absorption Near Edge Spectroscopy (XANES) measurements at Zn, Mn and O K edges and at Mn L{sub 2,3} edges apart from long range structural characterisation by Grazing Incident X-ray Diffraction (GIXRD) technique. Magnetic measurements show room temperature ferromagnetism in samples with lower Mn doping which is however, gets destroyed at higher Mn doping concentration. The results of the magnetic measurements have been explained using the local structure information obtained from EXAFS and XANES measurements.

  11. Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique

    Science.gov (United States)

    Pat, Suat; Özen, Soner; Şenay, Volkan; Korkmaz, Şadan

    2017-01-01

    Magnesium (Mg) is the most promising p-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet-visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.

  12. Diffusive gradient in thin films technique for assessment of cadmium and copper bioaccessibility to radish (Raphanus sativus).

    Science.gov (United States)

    Dočekalová, Hana; Škarpa, Petr; Dočekal, Bohumil

    2015-03-01

    The aim of this study was to assess cadmium and copper uptake by radish (Raphanus sativus) and to test the capability of the diffusive gradient in thin films (DGT) technique to predict bioaccessibility of the metals for this plant. Radish plants were grown in pots filled with uncontaminated control and artificially contaminated soils differing in cadmium and copper contents. Metal concentrations in plants were compared with free ion metal concentrations in soil solution, and concentrations measured by DGT. Significant correlation was found between metal fluxes to plant and metal fluxes into DGT. Pearson correlation coefficient for cadmium was 0.994 and for copper 0.998. The obtained results showed that DGT offers the possibility of simple test procedure for soils and can be used as a physical surrogate for plant uptake.

  13. S-Rich CdS1−yTey Thin Films Produced by the Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    Shadia J. Ikhmayies

    2016-03-01

    Full Text Available Understanding the properties of CdSTe ternary alloys is important because they always form at the interface between the CdS window layer and CdTe absorber layer in CdS/CdTe solar cells due to the intermixing. This interdiffusion is necessary because it improves the device performance. Experimental work has been devoted to studying Te rich p-type CdSxTe1−x alloys, but there is a lack of studies on S-rich n-type CdS1−yTey solid solutions. In this work, a review of the structure, morphology, and optical properties of the S-rich n-type CdS1−yTey thin films produced by the spray pyrolysis technique on glass substrates is presented.

  14. Spin wave study and optical properties in Fe-doped ZnO thin films prepared by spray pyrolysis technique

    Science.gov (United States)

    Lmai, F.; Moubah, R.; El Amiri, A.; Abid, Y.; Soumahoro, I.; Hassanain, N.; Colis, S.; Schmerber, G.; Dinia, A.; Lassri, H.

    2016-07-01

    We investigate the magnetic and optical properties of Zn1-xFexO (x = 0, 0.03, 0.05, and 0.07) thin films grown by spray pyrolysis technique. The magnetization as a function of temperature [M (T)] shows a prevailing paramagnetic contribution at low temperature. By using spin wave theory, we separate the M (T) curve in two contributions: one showing intrinsic ferromagnetism and one showing a purely paramagnetic behavior. Furthermore, it is shown that the spin wave theory is consistent with ab-initio calculations only when oxygen vacancies are considered, highlighting the key role played by structural defects in the mechanism driving the observed ferromagnetism. Using UV-visible measurements, the transmittance, reflectance, band gap energy, band tail, dielectric coefficient, refractive index, and optical conductivity were extracted and related to the variation of the Fe content.

  15. Structural and low temperature transport properties of PbBi thin films fabricated by rapid solidification technique

    Science.gov (United States)

    Kuru, Mehmet; Ongun, Erhan; Esad Ozmetin, Ali

    2017-06-01

    In this work, 500 nm thick superconducting α-phase PbBi thin-films were grown by thermal evaporation and quench-condensation mechanism in a vacuum chamber. Thermally-evaporated lead-bismuth vapor condensed on the silicon substrate which was cooled to 77 K by liquid nitrogen (LN2). Titanium-sublimation and a homemade LN2 cold-trap station were utilized to further improve the vacuum conditions. Structural and elemental analyses were conducted using scanning electron microscopy and energy dispersive x-ray spectroscopy techniques. The alloy content of the resulting PbBi film (78.22 at% Pb and 21.78 at% Bi) was found similar to that of the source alloy (82 at% Pb and 18 at% Bi) as the vapor pressure of bismuth lies close to that of lead. To reveal the transport characteristics of superconducting PbBi film, low temperature DC transport measurements were conducted by means of a four-probe method in a closed cycle dry cryostat cryogenics system. It was revealed that the superconductivity transition temperature of PbBi film decreased from 7.74 K to 5.95 K under increasing H-fields from 0 kOe to 7 kOe, respectively. Based on the R-T measurements, the electrical resistivity of quench-condensed PbBi film was calculated at different temperatures of 300 K, 77 K and 7.74 K, which were found as 9.11× {{10}-7} \\text{ohm}\\cdot \\text{m} , 4.43× {{10}-7} \\text{ohm}\\cdot \\text{m} and 1.95× {{10}-7} \\text{ohm}\\cdot \\text{m} , respectively. The residual resistance ratio value, which gives a rough estimation about the quality and performance of the superconducting film, was calculated as 4.65 indicating a reasonably quality film formation.

  16. An economic CVD technique for pure SnO2 thin films deposition: Temperature effects

    Indian Academy of Sciences (India)

    M Maleki; S M Rozati

    2013-04-01

    A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 ◦C was about 27 /cm2. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.

  17. Effect of deposition conditions on the physical properties of SnxSy thin films prepared by the spray pyrolysis technique

    Institute of Scientific and Technical Information of China (English)

    M. R. Fadavieslam; N. Shahtahmasebi; M. Rezaee-Roknabadi; M. M. Bagheri-Mohagheghi

    2011-01-01

    Tin sulfide thin films (SnxSy ) with an atomic ratio of y / x =0.5 have been deposited on a glass substrate by spray pyrolysis.The effects of deposition parameters,such as spray solution rate (R),substrate temperature (Ts) and film thickness (t),on the structural,optical,thermo-electrical and photoconductivity related properties of the films have been studied.The precursor solution was prepared by dissolving tin chloride (SnCl4,5H2O)and thiourea in propanol,and SnxSy thin film was prepared with a mole ratio of y/x =0.5.The prepared films were characterized by X-ray diffraction (XRD),scanning electron microscopy (SEM) and UV-vis spectroscopy.It is indicated that the XRD patterns of SnxSy films have amorphous and polycrystalline structures and the size of the grains has been changed from 7 to 16 nm.The optical gap of SnxSy thin films is determined to be about 2.41 to 3.08 eV by a plot of the variation of (ohv)2 versus hv related to the change of deposition conditions.The thermoelectric and photo-conductivity measurement results for the films show that these properties are depend considerably on the deposition parameters.

  18. Structural and optical studied of nano structured lead sulfide thin films prepared by the chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Al Din, Nasser Saad, E-mail: nsaadaldin@yahoo.com; Hussain, Nabiha, E-mail: nabihahssin@yahoo.com [Damascus University Faculty of Science, Department of physics, Homs (Syrian Arab Republic); Jandow, Nidhal, E-mail: nidhaljandow@yahoo.com [Al –Mustansiriyah University, College of Education, Department of physics, Baghdad (Iraq)

    2016-07-25

    Lead (II) Sulfide PbS thin films were deposited on glass substrates at 25°C by chemical bath deposition (CBD) method. The structural properties of the films were studied as a function of the concentration of Thiourea (CS (NH{sub 2}){sub 2}) as Source of Sulfide and deposition time. The surface morphology of the films was characterized by X-ray diffraction and SEM. The obtained results showed that the as-deposited films Polycrystalline had cubic crystalline phase that belong to S.G: Fm3m. We found that they have preferred orientation [200]. Also the thickness of thin films decrease with deposition time after certain value and, it observed free sulfide had orthorhombic phase. Optical properties showed that the thin films have high transmission at visible range and low transmission at UV, IR range. The films of PbS have direct band gap (I.68 - 2.32 ev) at 300 K the values of band energy decreases with increases thickness of the Lead (II) Sulfide films.

  19. Transparent conductive Hf-doped In2O3 thin films by RF sputtering technique at low temperature annealing

    Science.gov (United States)

    Wang, G. H.; Shi, C. Y.; Zhao, L.; Diao, H. W.; Wang, W. J.

    2017-03-01

    Hf-doped In2O3 transparent conductive polycrystalline films (IHFO) were grown at a low substrate temperature by radio frequency magnetron sputtering for the applications of silicon-based solar cell. The effect of argon flow rate on the electrical and optical properties of the films was investigated. Low temperature thermal treatment improved IHFO films properties, with the optimal Hall mobility of 79.6 cm2/Vs and resistivity of 3.76 × 10-4 Ω cm. The average transmittance of the 807 nm thick IHFO films in the range of 300-1500 nm was above 83%. The carrier density was utilized to evaluate the plasma wavelength of IHFO conducting film which was 1.8 μm. The optimized IHFO film was then applied to amorphous silicon germanium thin film solar cells as the contacting layer. Compared to the cell without such a layer, the efficiency was higher by 0.35%.

  20. Optimization of the Automated Spray Layer-by-Layer Technique for Thin Film Deposition

    Science.gov (United States)

    2010-06-01

    she was extremely busy running our household of five, homeschooling our son and volunteering. She amazes me every single day. I know that her... benefit to using solutions in excess of 80 mmol of PAA. However, at concentrations less than 80 mmol for the other standard parameter values it is...maximum film thickness. These results demonstrate that faster film deposition time is not the only benefit of Spray-LbL’s shorter polyelectrolyte to

  1. Performance of Erbium-doped TiO2 thin film grown by physical vapor deposition technique

    Science.gov (United States)

    Lahiri, Rini; Ghosh, Anupam; Dwivedi, Shyam Murli Manohar Dhar; Chakrabartty, Shubhro; Chinnamuthu, P.; Mondal, Aniruddha

    2017-09-01

    Undoped and Erbium-doped TiO2 thin films (Er:TiO2 TFs) were fabricated on the n-type Si substrate using physical vapour deposition technique. Field emission scanning electron microscope showed the morphological change in the structure of Er:TiO2 TF as compared to undoped sample. Energy dispersive X-ray spectroscopy (EDX) confirmed the Er doping in the TiO2 thin film (TF). The XRD and Raman spectrum showed the presence of anatase phase TiO2 and Er2O3 in the Er:TiO2 TF. The Raman scattering depicted additional number of vibrational modes for Er:TiO2 TF due to the presence of Er as compared to the undoped TiO2 TF. The UV-Vis absorption measurement showed that Er:TiO2 TF had approximately 1.2 times more absorption over the undoped TiO2 TF in the range of 300-400 nm. The main band transition, i.e., the transition between the oxygen (2p) state and the Ti (3d) state was obtained at 3.0 eV for undoped TiO2 and at 3.2 eV for Er:TiO2 TF, respectively. The photo responsivity measurement was done on both the detectors, where Er:TiO2 TF detector showed better detectivity ( D *), noise equivalent power and temporal response as compared to undoped detector under ultra-violet illumination.

  2. Potentiostatic Deposition and Characterization of Cuprous Oxide Thin Films

    OpenAIRE

    2013-01-01

    Electrodeposition technique was employed to deposit cuprous oxide Cu2O thin films. In this work, Cu2O thin films have been grown on fluorine doped tin oxide (FTO) transparent conducting glass as a substrate by potentiostatic deposition of cupric acetate. The effect of deposition time on the morphologies, crystalline, and optical quality of Cu2O thin films was investigated.

  3. Multilayer systems of alternating chalcogenide As Se and polymer thin films prepared using thermal evaporation and spin-coating techniques

    Science.gov (United States)

    Kohoutek, T.; Wagner, T.; Orava, J.; Krbal, M.; Ilavsky, J.; Vesely, D.; Frumar, M.

    2007-05-01

    We describe preparation and characterization of multilayer planar systems based on alternating chalcogenide As Se and polymer polyamide-imide (PAI) or polyvinyl-butyral (PVB) thin films. We deposited films of thermally evaporated As33Se67 chalcogenide glass periodically alternating with PAI or PVB films. Fifteen layers of As Se+PAI system and 17 layers of As Se+PVB system were deposited. The film thicknesses were approximately 100 nm for all of the film types. Polymer film thicknesses were calculated from profilometric measurements performed by an atomic force microscopy. Optical properties of prepared multilayers and also As Se, PAI and PVB single layers were established using UV vis NIR and ellipsometric spectroscopies. Both, As Se+PAI and As Se+PVB multilayer systems, exhibited the reflection (stop) bands centered near 830 nm. The bandwidth of reflection band of As Se+PAI multilayer was 90 nm while bandwidth of As Se+PVB system increased to 150 nm because PVB films had about 0.2 lower refractive index. A new possibility for the application of chalcogenide thin films appeared as high refractive index materials suitable for fabrication of optical elements (reflectors) for near-infrared region. Changing the films composition and thickness, multilayer systems with tailored position of stop band could be designed and prepared.

  4. Synthesis and magnetic characterization of a Cu{sub 80}Co{sub 20} thin film obtained by electrodeposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Bran, Julien; Jean, Malick; Lardé, Rodrigue; Sauvage, Xavier [Groupe de Physique des Matériaux, UMR 6634 CNRS, Université et INSA de Rouen, 76801 St Etienne du Rouvray (France); Breton, Jean-Marie Le, E-mail: jean-marie.lebreton@univ-rouen.fr [Groupe de Physique des Matériaux, UMR 6634 CNRS, Université et INSA de Rouen, 76801 St Etienne du Rouvray (France); Morin-Grognet, Sandrine [Laboratoire de Biophysique et Biomatériaux, MERCI EA 3829, Centre Universitaire d’Evreux, Université de Rouen, 1 rue du 7ème Chasseurs, 27002 Evreux Cedex (France); Pautrat, Alain [Laboratoire Crismat, UMR 6508 CNRS ENSICAEN, 6 boulevard du maréchal Juin, 14050 Caen Cedex (France)

    2014-05-01

    Highlights: • A Cu{sub 80}Co{sub 20} alloy was obtained by low cost electrodeposition. • The structure was investigated down to the atomic scale. • No oxides were formed. • Magnetoresistance is clearly related to superparamagnetic Co nanoparticles. - Abstract: A granular Cu{sub 80}Co{sub 20} alloy was elaborated by a low cost electrodeposition technique consisting in reducing simultaneously the Cu{sup 2+} and Co{sup 2+} ions onto a silicon substrate. The deposition parameters were determined from current-potential curves. The structure of the film was characterized down to the atomic scale by transmission electron microscopy and atom probe tomography. The results show that the as-deposited Cu{sub 80}Co{sub 20} thin film consists mainly of a paramagnetic Cu–Co solid solution containing 10–30% of Co, in which pure Co superparamagnetic nanoparticles are dissolved. Annealing at 500 °C for 1 h leads to the decomposition of the Cu–Co solid solution into purified Cu matrix containing ferromagnetic Co-rich precipitates. The magnetoresistance effect decreases after the heat treatment, in relation with the disappearance of the superparamagnetic Co nanoparticles upon annealing.

  5. Optical and structural properties of nanostructured ZnO thin films deposited onto FTO/glass substrate by a solution-based technique

    CSIR Research Space (South Africa)

    Berruet, M

    2013-10-01

    Full Text Available Nanostructured zinc oxide thin films were spin coated on conductive glass substrates via a sol–gel based technique using zinc acetate dihydrate as precursor. The pH of the alkalis used as catalytic agents in the hydrolysis step is shown to have a...

  6. Nanocauliflower like structure of CdS thin film for solar cell photovoltaic applications: Insitu tin doping by chemical bath deposition technique

    CSIR Research Space (South Africa)

    Wilson, KC

    2014-01-01

    Full Text Available We report on surface morphology changes of in situ tin (Sn) doped cadmium sulphide (CdS) thin film nanostructures prepared on a glass substrate using the chemical bath deposition (CBD) technique. Sn-doping in the presence of triethanolammine (TEOA...

  7. Investigation on Silicon Thin Film Solar Cells

    Institute of Scientific and Technical Information of China (English)

    2003-01-01

    The preparation, current status and trends are investigated for silicon thin film solar cells. The advantages and disadvantages of amorphous silicon thin film, polycrystalline silicon thin film and mono-crystalline silicon thin film solar cells are compared. The future development trends are pointed out. It is found that polycrystalline silicon thin film solar cells will be more promising for application with great potential.

  8. Synthesis and characterization of ZnO:TiO{sub 2} nano composites thin films deposited on glass substrate by sol-gel spray coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Sutanto, Heri, E-mail: herisutanto@undip.ac.id; Nurhasanah, Iis; Hidayanto, Eko; Wibowo, Singgih [Department of Physics, Faculty of Natural Sciences and Mathematics, Diponegoro University (Indonesia); Hadiyanto [Department of Chemical Engineering, Faculty of Engineering, Diponegoro University (Indonesia)

    2015-12-29

    In this work, (ZnO){sub x}:(TiO{sub 2}){sub 1-x} nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol–gel spray coating technique onto glass substrate. Pure TiO{sub 2} and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO{sub 2} and ZnO:TiO{sub 2} thin films at different composition have been investigated. Ultraviolet – Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employed in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO{sub 2} on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.

  9. Synthesis and characterization of ZnO:TiO2 nano composites thin films deposited on glass substrate by sol-gel spray coating technique

    Science.gov (United States)

    Sutanto, Heri; Nurhasanah, Iis; Hidayanto, Eko; Wibowo, Singgih; Hadiyanto

    2015-12-01

    In this work, (ZnO)x:(TiO2)1-x nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol-gel spray coating technique onto glass substrate. Pure TiO2 and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO2 and ZnO:TiO2 thin films at different composition have been investigated. Ultraviolet - Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employed in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO2 on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.

  10. Carrier lifetimes in thin-film photovoltaics

    Science.gov (United States)

    Baek, Dohyun

    2015-09-01

    The carrier lifetimes in thin-film solar cells are reviewed and discussed. Shockley-Read-Hall recombination is dominant at low carrier density, Auger recombination is dominant under a high injection condition and high carrier density, and surface recombination is dominant under any conditions. Because the surface photovoltage technique is insensitive to the surface condition, it is useful for bulk lifetime measurements. The photoconductance decay technique measures the effective recombination lifetime. The time-resolved photoluminescence technique is very useful for measuring thin-film semiconductor or solar-cell materials lifetime, because the sample is thin, other techniques are not suitable for measuring the lifetime. Many papers have provided time-resolved photoluminescence (TRPL) lifetimes for copper-indium-gallium-selenide (CIGS) and CdTe thin-film solar cell. The TRPL lifetime strongly depends on open-circuit voltage and conversion efficiency; however, the TRPL life time is insensitive to the short-circuit current.

  11. Thin films for micro solid oxide fuel cells

    Science.gov (United States)

    Beckel, D.; Bieberle-Hütter, A.; Harvey, A.; Infortuna, A.; Muecke, U. P.; Prestat, M.; Rupp, J. L. M.; Gauckler, L. J.

    Thin film deposition as applied to micro solid oxide fuel cell (μSOFC) fabrication is an emerging and highly active field of research that is attracting greater attention. This paper reviews thin film (thickness ≤1 μm) deposition techniques and components relevant to SOFCs including current research on nanocrystalline thin film electrolyte and thin-film-based model electrodes. Calculations showing the geometric limits of μSOFCs and first results towards fabrication of μSOFCs are also discussed.

  12. Nonlinear optical thin films

    Science.gov (United States)

    Leslie, Thomas M.

    1993-01-01

    A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film

  13. Synthesis of nanocrystalline TiO2 thin films by liquid phase deposition technique and its application for photocatalytic degradation studies

    Indian Academy of Sciences (India)

    Noor Shahina Begum; H M Farveez Ahmed

    2008-02-01

    A transparent, high purity titanium dioxide thin film composed of densely packed nanometer sized grains has been successfully deposited on a glass substrate at 30°C from an aqueous solution of TiO2–HF with the addition of boric acid as a scavenger by liquid phase deposition technique. From X-ray diffraction measurement, the deposited film was found to be amorphous and turns crystalline at 500°C. The deposited film showed excellent adherence to the substrate and was characterized by homogeneous flat surface. TiO2 thin films can be used as a photocatalyst to clean up organohalides, a class of compound in pesticides that pollute the ground water. Photocatalytic degradation experiments show that indanthrene golden orange dye undergoes degradation efficiently in presence of TiO2 thin films by exposing its aqueous solution to ultraviolet light. The suitable surface structure and porosity increases the photocatalytic activity. It was also observed that hemin doped TiO2 thin films break up organohalides at a surprisingly high rate under visible light.

  14. Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

    Science.gov (United States)

    Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

    2017-10-01

    Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

  15. Flexible thin film magnetoimpedance sensors

    Energy Technology Data Exchange (ETDEWEB)

    Kurlyandskaya, G.V., E-mail: galina@we.lc.ehu.es [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Fernández, E. [BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Svalov, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); Ural Federal University, Laboratory of Magnetic sensoric, Lenin Ave. 51, 620083 Ekaterinburg (Russian Federation); Burgoa Beitia, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); García-Arribas, A. [Universidad del País Vasco, UPV/EHU, Departamento de Electricidad y Electrónica, P.O. Box 644, Bilbao 48080 (Spain); BCMaterials UPV-EHU, Vizcaya Science and Technology Park, 48160 Derio (Spain); Larrañaga, A. [SGIker, Servicios Generales de Investigación, Universidad del País Vasco (UPV/EHU), 48080 Bilbao (Spain)

    2016-10-01

    Magnetically soft thin film deposited onto polymer substrates is an attractive option for flexible electronics including magnetoimpedance (MI) applications. MI FeNi/Ti based thin film sensitive elements were designed and prepared using the sputtering technique by deposition onto rigid and flexible substrates at different deposition rates. Their structure, magnetic properties and MI were comparatively analyzed. The main structural features were sufficiently accurately reproduced in the case of deposition onto cyclo olefine polymer substrates compared to glass substrates for the same conditions. Although for the best condition (28 nm/min rate) of the deposition onto polymer a significant reduction of the MI field sensitivity was found satisfactory for sensor applications sensitivity: 45%/Oe was obtained for a frequency of 60 MHz. - Highlights: • [FeNi/Ti]{sub 3}/Cu/[FeNi/Ti]{sub 3} films were prepared by sputtering at different deposition rates. • Polymer substrates insure sufficiently accurate reproducibility of the film structure. • High deposition rate of 28 nm/min insures the highest values of the magnetoimpedance sensitivity. • Deposition onto polymer results in the satisfactory magnetoimpedance sensitivity of 45%/Oe.

  16. A new dynamical diffraction-based technique of residual stress measurements in thin films

    CERN Document Server

    Agamalian, M; Kaiser, H; Rehm, C; Werner, S A

    2002-01-01

    The recently discovered dynamical diffraction effect 'neutron camel' was used for residual stress measurements in a thick Si (111) crystal coated with a 2000 A-thick Ni film. The observed asymmetry of the back-face rocking curve corresponds to the bending radius of propor to 19 km and the tension force applied to the Ni film is propor to 90 N/m. Relative deformation of the Si crystallographic cells in the vicinity of diffractive surfaces is vertical stroke partial deriv u sub z /partial deriv z vertical stroke approx 1.6 x 10 sup - sup 6. (orig.)

  17. First Thin Film Festival

    Science.gov (United States)

    Samson, Philippe

    2005-05-01

    The constant evolution of the satellite market is asking for better technical performances and reliability for a reduced cost. Solar array is in front line of this challenge. This can be achieved by present technologies progressive improvement in cost reduction or by technological breakthrough. To reach an effective End Of Live performance100 W/kg of solar array is not so easy, even if you suppose that the mass of everything is nothing! Thin film cells are potential candidate to contribute to this challenge with certain confidence level and consequent development plan validation and qualification on ground and flight. Based on a strong flight heritage in flexible Solar Array design, the work has allowed in these last years, to pave the way on road map of thin film technologies . This is encouraged by ESA on many technological contracts put in concurrent engineering. CISG was selected cell and their strategy of design, contributions and results will be presented. Trade-off results and Design to Cost solutions will discussed. Main technical drivers, system design constraints, market access, key technologies needed will be detailed in this paper and the resulting road-map and development plan will be presented.

  18. Influence of Nb content on the structural and optical properties of anatase TiO{sub 2} polycrystalline thin film by e-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Shah, A., E-mail: attaullah77@yahoo.com; Mahmood, Arshad; Aziz, Uzma; Rashid, Rashad; Raza, Qaiser; Ali, Zahid

    2016-09-01

    In this paper, we report the structural and optical properties of Nb-doped TiO{sub 2} thin films deposited by e-beam evaporation technique. After post annealing in air at 500 °C for 1 h, the samples were characterized by various techniques such as X-ray diffraction (XRD), Raman spectroscopy, UV–Vis spectrophotometry and spectroscopic Ellipsometer. Both XRD and Raman analyses indicate that the films were crystallized into the polycrystalline anatase TiO{sub 2} structure. However it was observed that the crystallinity of the films decreases with the addition of Nb atoms and tends to become amorphous at 20% Nb content in TiO{sub 2} film. Moreover, no new phases such as Nb{sub 2}O{sub 5}, NbO{sub 2} or Nb metal were observed. The band gap energy was found to decrease with the increasing of Nb concentration which was verified by ellipsometric study. Ellipsomtric measurements also indicate that refractive index (n) of the films decreases while extinction coefficient (k) increases with the increasing of Nb content. All these analyses elucidate that the incorporation of Nb atom into TiO{sub 2} may tune the structural and optical properties of TiO{sub 2} thin films. - Highlights: • The addition of Nb into TiO{sub 2} film has strongly influenced its physical properties. • Anatase polycrystalline Nb:TiO{sub 2} films were grown up to 15% Nb content. • The film becomes an amorphous at 20% Nb doping. • Band gap energy of TiO{sub 2} film was decreased with increasing of Nb content in the film. • The Optical constants (n, k) of Nb:TiO{sub 2} film were varied as a function of Nb content.

  19. Effect of Biofilm on Passive Sampling of Dissolved Orthophosphate Using the Diffusive Gradients in Thin Films Technique.

    Science.gov (United States)

    Feng, Zhongmin; Zhu, Peng; Fan, Hongtao; Piao, Shanshan; Xu, Liang; Sun, Ting

    2016-07-05

    We evaluated the possibility of sampling dissolved orthophosphate using the diffusive gradient in thin films (DGT) technique with a phosphate ion-imprinted polymer (PIP)-based adsorbent and assessed the effect of biofilm on the DGT measurement. The composition of biofilm formed on the DGT surface was analyzed, and the effect of biofouling on the diffusion coefficient of the analyte was investigated. The corrected diffusion coefficient for the biofouled DGT was estimated and used for the calculation of the DGT equation. PIP-binding gels had a higher adsorption affinity for orthophosphate than for the other anions, indicating its selectivity for orthophosphate. The concentrations predicted via DGT agreed well with the concentrations determined in the bulk solutions. Sampling of orthophosphate using PIP-DGT was consistent over a pH range of 3-9 and ionic strength range of 0.01-10 000 μM. Other P compounds cannot be measured using the PIP-DGT technique. The diffusion coefficient of the orthophosphate linearly decreased with increasing thickness of the biofilm. This sampling method performed predictably in freshwater when the biofilm was not formed or when value for the biofilm interference was reduced by using the corrected diffusion coefficient.

  20. Thin nanocomposite films of polyaniline/Au nanoparticles by the Langmuir-Blodgett technique.

    Science.gov (United States)

    Tanami, Golan; Gutkin, Vitaly; Mandler, Daniel

    2010-03-16

    The Langmuir-Blodgett (LB) method was used to deposit multilayers of polyaniline (PANI)- and mercaptoethanesulfonate (MES)-stabilized Au nanoparticles. The electrostatic interaction between the negatively charged nanoparticles in the subphase and the positively charged PANI at the air-water interface assisted the deposition of the nanocomposite film onto a solid support. These PANI/Au-NPs films were characterized using cyclic voltammetry, copper under potential deposition, scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. We found that the nanocomposite layers were uniform and reproducible. The density of Au-NPs in the monolayer depended on the acidity of the subphase as well as on the nanoparticles concentration. Moreover, the Au-NPs extrude above the PANI and therefore could be used as nanoelectrodes for the underpotential deposition (UPD) of copper.

  1. PREPARATION OF PHOTOFUNCTIONAL POLYMER THIN FILMS BY LANGMUIR-BLODGETT TECHNIQUE

    Institute of Scientific and Technical Information of China (English)

    Tokuji Miyashita; Tatsuo Taniguchi; Yoshihito Fukasawa

    1999-01-01

    Polymer LB films containing photofuntional groups were prepared by the copolymerization of N-dodecylacrylamide (DDA), which has an excellent property to form a stable monolayer and LB multilayers with photofunctional monomers. Tris(2, 2'-bipyridine) ruthenium complex, Ru(bpy)32+, one of the most wellknown redox-active sensitizer, was incorporated into the DDA copolymer. The photogalvanic effect based on the photoinduced electron transfer using the ruthenium complex in the polymer LB monolayer was discussed.

  2. Effect of silane flow rate on structural, electrical and optical properties of silicon thin films grown by VHF PECVD technique

    Energy Technology Data Exchange (ETDEWEB)

    Gope, Jhuma [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Department of Physics, Banaras Hindu University, Varanasi 221005 (India); Kumar, Sushil, E-mail: skumar@nplindia.org [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Sudhakar, S.; Rauthan, C.M.S. [Physics of Energy Harvesting Division, CSIR-Network of Institutes for Solar Energy, CSIR-National Physical Laboratory, Dr. K. S. Krishnan Road, New Delhi 110012 (India); Srivastava, P.C. [Department of Physics, Banaras Hindu University, Varanasi 221005 (India)

    2013-08-15

    Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV–visible (UV–Vis) spectroscopy. Different crystalline volume fraction (22%–60%) and band gap (∼1.58 eV–∼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10{sup −4} Ω{sup −1} cm{sup −1}. - Highlights: • Silicon films grown using VHF PECVD at various F{sub silane} (silane flow rate). • Amorphous to nanocrystalline silicon transition at F{sub silane} ∼5 sccm–10 sccm. • Deposition rate increases with the increase of F{sub silane}. • Powder formation occurred beyond 20 sccm of F{sub silane}. • Film grown at 20 sccm shows max. crystalline fraction ∼60% with E{sub g} ∼1.58 eV.

  3. Thin Film Inorganic Electrochemical Systems.

    Science.gov (United States)

    1995-07-01

    determined that thin film cathodes of LiCoO2 can be readily performed by either spray pyrolysis or spin coating . These cathodes are electrochemically...active. We have also determined that thin film anodes of Li4Ti5O12 can be prepared by spray pyrolysis or spin coating . These anodes are also

  4. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

  5. Comparative study of Hg xCd 1-xTe films grown on CdTe thin films previously deposited from two different techniques

    Science.gov (United States)

    Ali, A.; Abbas Shah, N.; Maqsood, A.

    2009-04-01

    High quality cadmium telluride (CdTe) thin films were grown on glass substrates with two different techniques, two evaporation source (TES) and closed space sublimation (CSS). Further to the above mercury telluride (HgTe) was then deposited by using single source on both CdTe thin films for obtaining Hg xCd 1-xTe samples. The crystalline structure of the Hg xCd 1-xTe sample grown from CSS-CdTe showed the preferential (1 1 1) orientation with smoother and larger grain size than those of TES-CdTe. The optical transmission for TES-CdTe sample was above 90% in the 1000-1500 nm range whereas it was significantly below 80% for CSS-CdTe sample. The optical transmission for TES-Hg xCd 1-xTe and CSS-Hg xCd 1-xTe was ˜60%. The resistivity at room temperature of TES-CdTe and CSS-CdTe was ˜3.33×10 9 Ω cm and ˜2.20×10 8 Ω cm, respectively, while the resistivity of TES-Hg xCd 1-xTe and CSS-Hg xCd 1-xTe samples was ˜1.73 Ω cm and ˜5.34×10 5 Ω cm, respectively. The comparative study of ternary compound prepared with the above techniques has been carried out for the first time.

  6. Note: Large area deposition of Rh single and Rh/W/Cu multilayer thin films on stainless steel substrate by pulsed laser deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Mostako, A. T. T.; Khare, Alika, E-mail: alika@iitg.ernet.in [Department of Physics, Indian Institute of Technology Guwahati, Guwahati 781039 (India)

    2014-04-15

    Mirror like thin films of single layer Rh and multilayer Rh/W/Cu are deposited on highly polished 50 mm diameter stainless steel substrate by Pulsed Laser Deposition (PLD) technique for first mirror application in fusion reactors. For this, the conventional PLD technique has been modified by incorporating substrate rastering stage for large area deposition via PLD. Process optimization to achieve uniformity of deposition as estimated from fringe visibility and thickness is also discussed.

  7. Thin-film crystalline silicon solar cells

    CERN Document Server

    Brendel, Rolf

    2011-01-01

    This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.

  8. Room temperature inorganic polycondensation of oxide (Cu{sub 2}O and ZnO) nanoparticles and thin films preparation by the dip-coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Salek, G.; Tenailleau, C., E-mail: tenailleau@chimie.ups-tlse.fr; Dufour, P.; Guillemet-Fritsch, S.

    2015-08-31

    Oxide thin solid films were prepared by dip-coating into colloidal dispersions of oxide nanoparticles stabilized at room temperature without the use of chelating or complex organic dispersing agents. Crystalline oxide nanoparticles were obtained by inorganic polycondensation and characterized by X-ray diffraction and field emission gun scanning electron microscopy. Water and ethanol synthesis and solution stabilization of oxide nanoparticle method was optimized to prepare two different structural and compositional materials, namely Cu{sub 2}O and ZnO. The influence of hydrodynamic parameters over the particle shape and size is discussed. Spherical and rod shape nanoparticles were formed for Cu{sub 2}O and ZnO, respectively. Isoelectric point values of 7.5 and 8.2 were determined for cuprous and zinc oxides, respectively, after zeta potential measurements. A shear thinning and thixotropic behavior was observed in both colloidal sols after peptization at pH ~ 6 with dilute nitric acid. Every colloidal dispersion stabilized in a low cost and environmentally friendly azeotrope solution composed of 96 vol.% of ethanol with water was used for the thin film preparation by the dip-coating technique. Optical properties of the light absorber cuprous oxide and transparent zinc oxide thin solid films were characterized by means of transmittance and reflectance measurements (300–1100 nm). - Highlights: • Room temperature inorganic polycondensation of crystalline oxides • Water and ethanol synthesis and solution stabilization of oxide nanoparticles • Low cost method for thin solid film preparation.

  9. Structural and optical properties of Sn{sub 1−x}Fe{sub x}O{sub 2} thin films prepared by flash evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Kuppan, M., E-mail: skaleemulla@gmail.com; Kaleemulla, S., E-mail: skaleemulla@gmail.com; Rao, N. Madhusudhana, E-mail: skaleemulla@gmail.com; Krishna, N. Sai, E-mail: skaleemulla@gmail.com; Begam, M. Rigana, E-mail: skaleemulla@gmail.com [Thin Films Laboratory, School of Advanced Sciences, VIT University, Vellore-632014, Tamilnadu (India)

    2014-04-24

    Sn{sub 1−x}Fe{sub X}O{sub 2} (x = 0, 0.05) thin films were prepared on glass substrate using the flash evaporation technique. The samples were annealed at 773 K for 2 hrs in air atmosphere. A systematic study was carried out on the structural and optical properties of the as deposited and annealed thin films. From the X-ray diffraction analysis it was found that the Sn{sub 1−x}Fe{sub X}O{sub 2} films deposited at 623 K were amorphous in nature and the Sn{sub 1−x}Fe{sub X}O{sub 2} films annealed at 773 K exhibited the tetragonal structure of the SnO{sub 2}. The optical band gap of the SnO{sub 2} thin films was found to be as 3.17 eV whereas the optical band gap of the Sn{sub 1−x}Fe{sub X}O{sub 2} films was found to be as 3.01 eV after air annealing.

  10. Spinodal dewetting of thin films

    Science.gov (United States)

    Jaiswal, Prabhat K.; Puri, S.

    2009-01-01

    Stable thin liquid films are of various scientific and technological applications, e.g., in optical coating, painting technologies, coating thin wires and fibers, lubricants, adhesives, etc. However, the instabilities in a thin film may lead to rupture, hole formation, and other morphological changes which amplify the nonuniformity in the thin film [1]. This morphological evolution in an unstable thin film is generally known as `dewetting' [2]. There have recently been a number of theoretical and experimental studies on dewetting in thin films [3-6]. The process of `spinodal dewetting' comes into the category of a general class of phenomena, spinodal decomposition [7]. The pattern formation taking place during dewetting can also be of great importance in nanotechnology, e.g., for preparing quantum dots [8], nanorings [9], etc. We numerically solve the nonlinear two-dimensional thin film equation [2] for a thin liquid film subjected to the long range van der Waals attraction and short range Born repulsion. The simulation results for the temporal evolution of domains and height profile along diagonal direction of the lattice show the `hills and valleys' short of structures which is the typical morphology obtained during the spinodal dewetting [10]. We obtain the dynamical correlation function and structure factor showing the existence of a characteristic length scale in the system at late time. We give the scaling arguments for the length scale of the drops to be proportional to t1/3 which is in agreement with our numerical results for the domain growth.

  11. Polyimide Aerogel Thin Films

    Science.gov (United States)

    Meador, Mary Ann; Guo, Haiquan

    2012-01-01

    Polyimide aerogels have been crosslinked through multifunctional amines. This invention builds on "Polyimide Aerogels With Three-Dimensional Cross-Linked Structure," and may be considered as a continuation of that invention, which results in a polyimide aerogel with a flexible, formable form. Gels formed from polyamic acid solutions, end-capped with anhydrides, and cross-linked with the multifunctional amines, are chemically imidized and dried using supercritical CO2 extraction to give aerogels having density around 0.1 to 0.3 g/cubic cm. The aerogels are 80 to 95% porous, and have high surface areas (200 to 600 sq m/g) and low thermal conductivity (as low as 14 mW/m-K at room temperature). Notably, the cross-linked polyimide aerogels have higher modulus than polymer-reinforced silica aerogels of similar density, and can be fabricated as both monoliths and thin films.

  12. Structural and morphological characterization of TiO2-SnO2 thin film prepared by combining doctor-blade and sol-gel techniques

    Science.gov (United States)

    Adawiyah, S. R.; Endarko

    2017-04-01

    The TiO2-SnO2 thin film has successfully been synthesized using the co-precipitation method and was coated on ITO (Indium Tin Oxide) substrate by doctor-blade technique. The structure and morphology of the film were investigated by XRD and SEM, respectively. The results showed that the film with SnO2 has a stronger formation of anatase phase compared to TiO2 film. The morphological study is also revealed that the TiO2-SnO2 film has a more porous nature and uniform particle aggregates, and the presence of SnO2 has been confirmed with EDX spectra.

  13. Photophysical properties of Alq3 thin films

    Science.gov (United States)

    Zawadzka, A.; Płóciennik, P.; Strzelecki, J.; Łukasiak, Z.; Sahraoui, B.

    2013-11-01

    This work contains investigation results of the photophysical properties of aluminum (III) tris(8-hydroxyquinoline) thin films. The Alq3 thin films were successfully fabricated by Physical Vapor Deposition technique. The films were grown on transparent: (quartz and glass) and semiconductor (n-type silica) substrates kept at room temperature during the deposition process. Selected films were annealed after fabrication in ambient atmosphere for 12 h at the temperature equal to 100 °C and 150 °C. Morphology of the films was investigated by AFM technique. Photophysical properties were characterized via photoluminescence, transmission, second and third harmonic generation measurements. The thin films exhibit high structural quality regardless of the annealing process, but the stability of the film can be improved by using an appropriate temperature during the annealing process. Photoluminescence of Alq3 films obtained in air were efficient and stable. The measurements of transmission, SHG and THG spectra allowed us to determine optical constant of the films. We find that the photophysical properties were strictly connected with the morphology and the annealing process significantly changes the structural properties of the films.

  14. Liquid phase deposition of electrochromic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Richardson, Thomas J.; Rubin, Michael D.

    2000-08-18

    Thin films of titanium, zirconium and nickel oxides were deposited on conductive SnO2:F glass substrates by immersion in aqueous solutions. The films are transparent, conformal, of uniform thickness and appearance, and adhere strongly to the substrates. On electrochemical cycling, TiO2, mixed TiO2-ZrO2, and NiOx films exhibited stable electrochromism with high coloration efficiencies. These nickel oxide films were particularly stable compared with films prepared by other non-vacuum techniques. The method is simple, inexpensive, energy efficient, and readily scalable to larger substrates.

  15. Crystalline thin films: The electrochemical atomic layer deposition (ECALD) view

    CSIR Research Space (South Africa)

    Modibedi, M

    2011-09-01

    Full Text Available Electrochemical atomic layer deposition technique is selected as one of the methods to prepare thin films for various applications, including electrocatalytic materials and compound....

  16. Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO2 thin films, deposited by sol-gel technique

    Science.gov (United States)

    Khan, M. I.; Bhatti, K. A.; Qindeel, Rabia; Bousiakou, Leda G.; Alonizan, Norah; Fazal-e-Aleem

    Investigations of the structural, morphological and electrical properties of multilayer ZnO/TiO2 thin films deposited by sol-gel technique on glass substrate. Sol-gel is a technique in which compound is dissolved in a liquid in order to bring it back as a solid in a controlled manner. TiO2 solution was obtained by dissolving 0.4 g of TiO2 nano powder in 5 ml ethanol and 5 ml diethylene glycol. ZnO solution was obtained by dissolving 0.88 g zinc acetate in 20 ml of 2-methoxyethanol. X-ray diffraction (XRD) (PW 3050/60 PANalytical X'Pert PRO diffractometer) results showed that the crystallinity is improved when the number of ZnO/TiO2 layers increased. Also it shows the three phases (rutile, anatase and brookite) of TiO2. Surface morphology measured by scanning electron microscopy (SEM) (Quanta 250 fei) revealed that Crakes are present on the surface of ZnO/TiO2 thin films which are decreased when the number of ZnO/TiO2 layers increased. Four point probe (KIETHLEY instrument) technique used to investigate the electrical properties of ZnO/TiO2 showed the average resistivity decreased by increasing the number of ZnO/TiO2 layers. These results indicated that the multilayer thin films improved the quality of film crystallinity and electrical properties as compared to single layer.

  17. Comparative study of CdTe sources used for deposition of CdTe thin films by close spaced sublimation technique

    Directory of Open Access Journals (Sweden)

    Wagner Anacleto Pinheiro

    2006-03-01

    Full Text Available Unlike other thin film deposition techniques, close spaced sublimation (CSS requires a short source-substrate distance. The kind of source used in this technique strongly affects the control of the deposition parameters, especially the deposition rate. When depositing CdTe thin films by CSS, the most common CdTe sources are: single-crystal or polycrystalline wafers, powders, pellets or pieces, a thick CdTe film deposited onto glass or molybdenum substrate (CdTe source-plate and a sintered CdTe powder. In this work, CdTe thin films were deposited by CSS technique from different CdTe sources: particles, powder, compact powder, a paste made of CdTe and propylene glycol and source-plates (CdTe/Mo and CdTe/glass. The largest deposition rate was achieved when a paste made of CdTe and propylene glycol was used as the source. CdTe source-plates led to lower rates, probably due to the poor heat transmission, caused by the introduction of the plate substrate. The results also showed that compacting the powder the deposition rate increases due to the better thermal contact between powder particles.

  18. Linear optical characterization of transparent thin films by the Z-scan technique.

    Science.gov (United States)

    Boudebs, Georges; Fedus, Kamil

    2009-07-20

    We report experimental characterization of a very small rectangular phase shift (Z-scan technique. The numerical simulations as well as the experimental results reveal a peak-valley configuration in the far-field normalized transmittance, allowing us to determine the sign of the dephasing. The conditions necessary to obtain useful Z-scan traces are discussed. We provide simple linear expressions relating the measured signal to the phase shift. A very good agreement between calculated and experimental Z-scan profiles validates our approach. We show that a very well known nonlinear characterization technique can be extended for linear optical parameter estimation (as refractive index or thickness).

  19. Comparative microstructure and electrical property studies of lead scandium tantalate thin films as prepared by LDCVD, sol-gel and sputtering techniques

    Science.gov (United States)

    Huang, Z.; Donohue, P. P.; Zhang, Q.; Williams, D. J.; Anthony, C. J.; Whatmore, R. W.; Todd, M. A.

    2003-02-01

    Lead scandium tantalate (PST) thin films for uncooled infrared (IR) detector applications have been deposited by liquid delivery chemical vapour deposition (LDCVD), sputtering and sol-gel techniques. The sol-gel and sputtered films were deposited at low temperature into a non-ferroelectric phase with the required perovskite structure being formed using a high temperature rapid thermal anneal (RTA). In contrast to this, the LDCVD films were deposited at high temperature directly into the perovskite phase but were found to still require a high temperature RTA step to optimize their merit for IR detection. Detailed structural and electrical characterization of the PST films deposited by these different methods have revealed that there is no simple relationship between microstructure and electrical properties. The sol-gel and LDCVD techniques produce thin films with excellent microstructures, as determined by x-ray diffraction analysis and transmission electron microscopy, but inferior electrical properties and relatively low merit figures. By contrast, the sputtered and then rapid thermal annealed films have inferior microstructures, characterized by extensive voiding, but excellent electrical properties and high merit figures.

  20. Synthesis and Characterization of Nanofibrous Polyaniline Thin Film Prepared by Novel Atmospheric Pressure Plasma Polymerization Technique

    Directory of Open Access Journals (Sweden)

    Choon-Sang Park

    2016-01-01

    Full Text Available This work presents a study on the preparation of plasma-polymerized aniline (pPANI nanofibers and nanoparticles by an intense plasma cloud type atmospheric pressure plasma jets (iPC-APPJ device with a single bundle of three glass tubes. The nano size polymer was obtained at a sinusoidal wave with a peak value of 8 kV and a frequency of 26 kHz under ambient air. Discharge currents, photo-sensor amplifier, and optical emission spectrometer (OES techniques were used to analyze the plasma produced from the iPC-APPJ device. Field emission scanning electron microscopy (FE-SEM, transmission electron microscopy (TEM, Fourier transform infrared spectroscopy (FT-IR, gas chromatography-mass spectrometry (GC-MS, and gel permeation chromatography (GPC techniques were used to analyze the pPANI. FE-SEM and TEM results show that pPANI has nanofibers, nanoparticles morphology, and polycrystalline characteristics. The FT-IR and GC-MS analysis show the characteristic polyaniline peaks with evidence that some quinone and benzene rings are broken by the discharge energy. GPC results show that pPANI has high molecular weight (Mw, about 533 kDa with 1.9 polydispersity index (PDI. This study contributes to a better understanding on the novel growth process and synthesis of uniform polyaniline nanofibers and nanoparticles with high molecular weights using the simple atmospheric pressure plasma polymerization technique.

  1. Polymer surfaces, interfaces and thin films

    Energy Technology Data Exchange (ETDEWEB)

    Stamm, M. [Max-Planck-Institut fuer Polymerforschung, Mainz (Germany)

    1996-11-01

    Neutron reflectometry can be used in various ways to investigate surfaces, interfaces and thin films of polymers. Its potential comes mostly from the possibilities offered by selective deuteration, where a particular component can be made visible with respect to its activity at the interface. In addition the depth resolution is much better than with most other direct techniques, and details of the profiles may be resolved. Several examples will be discussed including the segment diffusion at the interface between two polymer films, the determination of the narrow interfaces between incompatible polymer blends and the development of order in thin diblock copolymer films. (author) 10 figs., 2 tabs., 38 refs.

  2. NLO properties of functionalized DNA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Krupka, Oksana [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)], E-mail: okrupka@mail.ru; El-ghayoury, Abdelkrim [University d' Angers, UFR Sciences, Laboratoire CIMMA UMR CNRS 6200, 2 Bd. Lavoisier, 49045 (France); Rau, Ileana; Sahraoui, Bouchta [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France); Grote, James G. [Air Force Research Laboratory Materials and Manufacturing Directorate, Wright-Patterson Air Force Base, 3005 Hobson Way, Dayton, OH 45433-7707 (United States); Kajzar, Francois [University d' Angers, Laboratoire POMA CNRS UMR 6136, France, 2 Bd. Lavoisier, 49045 (France)

    2008-10-31

    In this paper we investigate the third-order nonlinear optical properties of spin deposited thin films of DNA-based complexes using the optical third harmonic generation (THG) technique at a fundamental wavelength of 1064 nm. We found that the third-order susceptibility, {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}), of DNA-based films was about one order of magnitude larger than that of our reference, a pure silica slab. In thin films doped with 5% of the chromophore disperse red 1 (DR1), a two order of magnitude larger value of {chi}{sup (3)}(- 3{omega};{omega},{omega},{omega}) was observed.

  3. Study of depth profile of hydrogen in hydrogenated diamond like carbon thin film using ion beam analysis techniques

    Energy Technology Data Exchange (ETDEWEB)

    Datta, J. [Analytical Chemistry Division, BARC, Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata 700064 (India); Biswas, H.S. [Dept. of Chemistry, Surendranath College, Kolkata 700009 (India); Rao, P.; Reddy, G.L.N.; Kumar, S. [National Centre for Compositional Characterization of Materials, BARC, ECIL Post, Hyderabad 500062 (India); Ray, N.R. [Surface Physics Material Science Division, Saha Institute of Nuclear Physics, 1/AF, Bidhan Nagar, Kolkata 700064 (India); Chowdhury, D.P. [Analytical Chemistry Division, BARC, Variable Energy Cyclotron Centre, 1/AF, Bidhan Nagar, Kolkata 700064 (India); Reddy, A.V.R. [Analytical Chemistry Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India)

    2014-06-01

    The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high vacuum (∼10{sup −7} torr) and high temperature (750 and 1050 °C) furnace. The as-prepared and annealed HDLC films have been depth profiled for hydrogen using the resonance at 6.44 MeV in {sup 1}H({sup 19}F,αγ){sup 16}O nuclear reaction. The as prepared films exhibit non-uniform depth distribution of hydrogen: it decreases with depth. Annealing in vacuum brings about is a significant desorption of hydrogen from the films. Loss of hydrogen, albeit in much lower proportions, is also induced by the bombarding beam. The films also experience a mild loss of carbon, as shown by proton backscattering spectrometry, during high vacuum annealing. The depth profiles of hydrogen in the annealed films are indicative of the prevalence of graphitic carbon near film–substrate interface.

  4. Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

    Energy Technology Data Exchange (ETDEWEB)

    Broitman, Esteban, E-mail: esbro@ifm.liu.se [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping (Sweden); Flores-Ruiz, Francisco J. [Thin Film Physics Division, IFM, Linköping University, SE-581 83 Linköping, Sweden and Centro de Investigación y de Estudios Avanzados del I.P.N., Unidad Querétaro, Querétaro 76230 (Mexico); Di Giulio, Massimo [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce (Italy); Gontad, Francisco; Lorusso, Antonella; Perrone, Alessio [Università del Salento, Dipartimento di Matematica e Fisica “E. De Giorgi”, 73100 Lecce, Italy and INFN-Istituto Nazionale di Fisica Nucleare, 73100 Lecce (Italy)

    2016-03-15

    In this work, the authors compare the morphological, structural, nanomechanical, and microtribological properties of Pb films deposited by thermal evaporation (TE) and pulsed laser deposition (PLD) techniques onto Si (111) substrates. Films were investigated by scanning electron microscopy, surface probe microscopy, and x-ray diffraction in θ-2θ geometry to determine their morphology, root-mean-square (RMS) roughness, and microstructure, respectively. TE films showed a percolated morphology with densely packed fibrous grains while PLD films had a granular morphology with a columnar and tightly packed structure in accordance with the zone growth model of Thornton. Moreover, PLD films presented a more polycrystalline structure with respect to TE films, with RMS roughness of 14 and 10 nm, respectively. Hardness and elastic modulus vary from 2.1 to 0.8 GPa and from 14 to 10 GPa for PLD and TE films, respectively. A reciprocal friction test has shown that PLD films have lower friction coefficient and wear rate than TE films. Our study has demonstrated for first time that, at the microscale, Pb films do not show the same simple lubricious properties measured at the macroscale.

  5. Temperature and Angular Dependence of Ferromagnetic Resonance (FMR Signal of La0.7Sr0.3MnO3 (LSMO Thin Film Using FMR Technique

    Directory of Open Access Journals (Sweden)

    G. Inkoom

    2014-04-01

    Full Text Available This research study was aimed at determining the temperature dependence of Ferromagnetic Resonance (FMR, the recorded signal versus angle and the magnetic property of the 15 uc thick La0.7Sr0.3MnO3 (LSMO thin film sample on a single crystalline SrTiO3 (STO substrate at 150 K and 9.75 GHz using ferromagnetic resonance technique. We observed from the Ferromagnetic Resonance (FMR spectra at various temperatures (150, 200 and 250 K, respectively that as the temperature increases, the FMR spectra shifts to higher fields and this might be as a result of transition into the ferromagnetic state. The recorded signal versus the angle showed an unusual phenomenon at all temperatures (150, 200 and 250 K, respectively and this might be due to shape effects and other contributing factors such as misfit strain and crystal misfit in the LSMO thin film. The plot of resonance field versus the in-plane angle showed a spectrum which was sinusoidal-like in nature with maximum and minimum curvatures. The resonance position and the Full Width Half Maximum (FWHM of the 15 uc thick LSMO thin film were 718.15 and 561.45 Oe, respectively. The 15 uc thick LSMO thin film displayed ferromagnetic resonance at 150, 200 and 250 K, respectively and this has been confirmed using the surface plot.

  6. Influence of Ga doping ratio on the saturable absorption mechanism in Ga doped ZnO thin solid films processed by sol–gel spin coating technique

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.; Byrappa, K.

    2017-03-01

    In the present study, the nonlinear optical properties of sol–gel spin coated gallium doped zinc oxide (GZO) thin solid films are explored with nanosecond laser pulses using the z-scan technique. The higher doping ratios of Ga result in a large redshift of the energy gap (0.38 eV) due to the existence of enhanced grain boundary defects in GZO films. A positive nonlinear absorption coefficient is observed in undoped 1 at.wt.% GZO and 2 at.wt.% GZO films, and a negative nonlinear absorption coefficient in 3 at.wt.% GZO film. Fewer defects in undoped 1% GZO and 2% GZO films resulted in reverse saturable absorption (RSA), whereas a saturable absorption (SA) mechanism is observed in 3% GZO films and is attributed to the enhanced defect concentration in the band structure of GZO. However, all the films showed a self-defocusing mechanism, derived by a closed aperture z-scan technique. The present work sheds light on the defect mechanism involved in the observed nonlinear properties of GZO films.

  7. Physical properties of Zn doped TiO2 thin films with spray pyrolysis technique and its effects in antibacterial activity.

    Science.gov (United States)

    Arunachalam, A; Dhanapandian, S; Manoharan, C; Sivakumar, G

    2015-03-05

    Zinc doped Titanium dioxide (TiO2: Zn) thin films were deposited onto glass substrates by the spray pyrolysis technique with the substrate temperature 450°C. The structural, optical, photoluminescence (PL) properties and morphological studies were investigated for the films deposited with various doping concentration (0, 2, 4, 6 and 8at.%) of zinc. The results of X-ray diffraction (XRD) had shown the presence of anatase peak with a strong orientation along (101) plane at 8at.% of Zn-doped TiO2 film. Scanning electron microscopy (SEM) study showed the uniform distribution of grains with porous nature. Atomic force microscopy (AFM) observations indicated the tetragonal shape at 8at.% of Zn-doped TiO2 with the particle size and decrease in surface roughness. The emission at 398nm was observed at the 8at.% of Zn-doped TiO2 thin film. The carrier concentration and Hall mobility was increased with doping. The antibacterial activity was highly yielded for the Zn-doped TiO2 thin films.

  8. Printable CIGS thin film solar cells

    Science.gov (United States)

    Fan, Xiaojuan

    2014-03-01

    Among the various thin film solar cells in the market, CuInGaSe thin film cells have been considered as the most promising alternatives to silicon solar cells because of their high photo-electricity efficiency, reliability, and stability. However, many fabrication of CIGS thin film are based on vacuum processes such as evaporation sputtering techniques which are not cost efficient. This work develops a method using paste or ink liquid spin-coated on glass that would be to conventional ways in terms of cost effective, non-vacuum needed, quick processing. A mixture precursor was prepared by dissolving appropriate amounts of chemicals. After the mixture solution was cooled, a viscous paste prepared and ready for spin-coating process. A slight bluish CIG thin film substrate was then put in a tube furnace with evaporation of metal Se by depositing CdS layer and ZnO nanoparticle thin film coating to a solar cell fabrication. Structure, absorption spectrum, and photo-conversion efficiency for the as-grown CIGS thin film solar cell under study.

  9. Dielectric studies of boron sub phthalocyanine chloride thin films by admittance spectroscopic techniques

    Energy Technology Data Exchange (ETDEWEB)

    Kalia, Sameer; Neerja [Department of Physics, DAV College, Amritsar-143301 (India); Mahajan, Aman, E-mail: dramanmahajan@yahoo.co.in; Sharma, Anshul Kumar; Kumar, Sanjeev; Bedi, R. K. [Material Research Laboratory, Department of Physics, Guru Nanak Dev University, Amritsar-143005 (India)

    2016-05-06

    The dielectric properties of Boron Sub Phthalocyanine Chloride (Cl-SubPc) thermally deposited on ITO substrate have been studied using admittance spectroscopic techniques. The I-V and capacitance –frequency (C-F) studies at various bias voltages reveal that the mobility of charge carriers decrease with bias voltage, however the conduction phenomenon still remain hopping in nature. From the differential susceptance curve, the contribution of the Schottky barrier contact in the charge carrier concentration was found to be absent. The mobility of charge carriers have been determined using differential susceptance variation and from the phase of admittance curve. The values obtained in two cases have been found to be in agreement with each other.

  10. Characterization of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films deposited by electron-beam technique

    Energy Technology Data Exchange (ETDEWEB)

    Karaagac, H; Parlak, M [Department of Physics, Middle East Technical University, 06531 Ankara (Turkey); Kaleli, M, E-mail: parlak@metu.edu.t [Department of Physics, Sueleyman Demirel University, 32260 Isparta (Turkey)

    2009-08-21

    AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were deposited onto a quartz substrate by the electron-beam technique. For the investigation of the annealing effect on structural, optical and electrical properties of deposited films, samples were annealed in the temperature range 300-775 {sup 0}C. The composition analyses of the deposited films carried out by energy dispersive x-ray analysis measurements have shown that the deposited AgGa{sub 0.5}In{sub 0.5}Se{sub 2} films were indium- and gallium-rich but selenium- and slightly silver-deficient and there was a remarkable change in composition with annealing. As a result of x-ray diffraction measurements, the as-deposited films were found to have an amorphous structure and after annealing at 300 {sup 0}C a polycrystalline structure with different phases was observed. However, subsequent annealing resulted in the formation of single phase AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin film at about 775 {sup 0}C. The absorption coefficient of the films was determined from the transmission spectra and the band gap values were calculated and found to vary between 1.57 and 2.43 eV following annealing in the temperature range 300-775 {sup 0}C. The refractive index (n) and extinction coefficient (k) of the films were evaluated by applying the envelope method to the transmission spectra. The spectral distributions of these quantities for both as-deposited and annealed films were determined in detail and it was observed that there has been a remarkable influence of annealing on these quantities. The electrical properties of AgGa{sub 0.5}In{sub 0.5}Se{sub 2} thin films were also investigated by means of temperature dependent conductivity measurements in the temperature range 100-460 K. The resistivity of the samples depending on the annealing temperature varied between 6.5 x 10{sup 5} and 16 {Omega} cm. As a result of the hot-probe method it was observed that the as-deposited films have indicated an n-type behaviour, while all the

  11. Thin Film Electrodes for Rare Event Detectors

    Science.gov (United States)

    Odgers, Kelly; Brown, Ethan; Lewis, Kim; Giordano, Mike; Freedberg, Jennifer

    2017-01-01

    In detectors for rare physics processes, such as neutrinoless double beta decay and dark matter, high sensitivity requires careful reduction of backgrounds due to radioimpurities in detector components. Ultra pure cylindrical resistors are being created through thin film depositions onto high purity substrates, such as quartz glass or sapphire. By using ultra clean materials and depositing very small quantities in the films, low radioactivity electrodes are produced. A new characterization process for cylindrical film resistors has been developed through analytic construction of an analogue to the Van Der Pauw technique commonly used for determining sheet resistance on a planar sample. This technique has been used to characterize high purity cylindrical resistors ranging from several ohms to several tera-ohms for applications in rare event detectors. The technique and results of cylindrical thin film resistor characterization will be presented.

  12. Magnetism at spinel thin film interfaces probed through soft x-ray spectroscopy techniques

    Energy Technology Data Exchange (ETDEWEB)

    Chopdekar, R.V.; Liberati, M.; Takamura, Y.; Kourkoutis, L. Fitting; Bettinger, J. S.; Nelson-Cheeseman, B. B.; Arenholz, E.; Doran, A.; Scholl, A.; Muller, D. A.; Suzuki, Y.

    2009-12-16

    Magnetic order and coupling at the interfaces of highly spin polarized Fe{sub 3}O{sub 4} heterostructures have been determined by surface sensitive and element specific soft x-ray spectroscopy and spectromicroscopy techniques. At ambient temperature, the interface between paramagnetic CoCr{sub 2}O{sub 4} or MnCr{sub 2}O{sub 4} and ferrimagnetic Fe{sub 3}O{sub 4} isostructural bilayers exhibits long range magnetic order of Co, Mn and Cr cations which cannot be explained in terms of the formation of interfacial MnFe{sub 2}O{sub 4} or CoFe{sub 2}O{sub 4}. Instead, the ferrimagnetism is induced by the adjacent Fe{sub 3}O{sub 4} layer and is the result of the stabilization of a spinel phase not achievable in bulk form. Magnetism at the interface region is observable up to 500 K, far beyond the chromite bulk Curie temperature of 50-95 K.

  13. Synthesis of Colloidal ZnO Nanoparticles and Deposit of Thin Films by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Jose Alberto Alvarado

    2013-01-01

    Full Text Available ZnO colloidal nanoparticles were synthesized, the average size of these nanoparticles is around 25 nm with hexagonal form. It was noted that stabilization depends directly on the purifying process; in this work we do not change the nature of the solution as a difference from Meulekamp's method, and we do not use any alkanes to remove the byproducts; only a centrifuge to remove those ones was used, thereby the stabilization increases up to 24 days. It is observed from the results that only three times of washing is enough to prevent the rapid aging process. The effect of annealing process on the composition, size, and geometrical shape of ZnO nanoparticles was studied in order to know whether the annealing process affects the crystallization and growth of the nanoparticles. After the synthesis, the colloidal nanoparticles were deposited by spin coating technique showing that the formed nanoparticles have no uniformly deposition pattern. But is possible to deposit those ones in glass substrates. A possible deposition process of the nanoparticles is proposed.

  14. Ac conductivity and dielectric spectroscopy studies on tin oxide thin films formed by spray deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Barış, Behzad, E-mail: behzadbaris@gmail.com

    2014-04-01

    Au/tin oxide/n-Si (1 0 0) structure has been created by forming a tin oxide (SnO{sub 2}) on n-type Si by using the spray deposition technique. The ac electrical conductivity (σ{sub ac}) and dielectric properties of the structure have been investigated between 30 kHz and 1 MHz at room temperature. The values of ε', ε″, tanδ, σ{sub ac}, M' and M″ were determined as 1.404, 0.357, 0.253, 1.99×10{sup −7} S/cm, 0.665 and 0.168 for 1 MHz and 6.377, 6.411, 1.005, 1.07×10{sup −7} S/cm, 0.077 and 0.078 for 30 kHz at zero bias, respectively. These changes were attributed to variation of the charge carriers from the interface traps located between semiconductor and metal in the band gap. It is concluded that the values of the ε', ε″ and tanδ increase with decreasing frequency while a decrease is seen in σ{sub ac} and the real (M') and imaginary (M″) components of the electrical modulus. The M″ parameter of the structure has a relaxation peak as a function of frequency for each examined voltage. The relaxation time of M″(τ{sub M″}) varies from 0.053 ns to 0.018 ns with increasing voltage. The variation of Cole–Cole plots of the sample shows that there is one relaxation.

  15. Characterization of Ni-doped TiO2 thin films deposited by dip-coating technique

    Science.gov (United States)

    Kharoubi, Abdelmalek; Bouaza, A.; Benrabah, B.; Ammari, A.; Khiali, A.

    2015-12-01

    Undoped and Ni-doped TiO2 thin films have been prepared by sol-gel dip-coating method on glass and silicon substrates. X-ray diffraction studies show that both TiO2 and Ni-doped TiO2 thin films are of anatase phase with (1 0 1) as preferential orientation. From the UV-visible spectroscopy analysis, all films exhibits a high transparency ~ 80% and shows that the optical band gap decreases from 3.66 to 3.59 eV, which may be related with the phase composition and impurities. Fourier transformed infrared spectroscopy (FTIR) study confirms the presence of Ti-O, Ti=O and O-H bands. Thermal analysis by differential scanning calorimetriy (DSC) shows endothermic reactions between 30 °C and 280 °C and exothermic reactions between 370 °C and 540 °C corresponding to the crystallization of TiO2 in the anatase phase. The Nyquist plots suggests that the equivalent circuit of the films is an RpCp parallel circuit and shows an increase in resistance Rp with increasing the Ni concentration and a decrease in capacity Cp.

  16. Near-field optical second-harmonic technique for detection and characterization of semiconductor thin film electron-scattering domain boundaries

    Science.gov (United States)

    Shafiei, Farbod; Orzali, Tommaso; Bersuker, Gennadi; Michael, Downer

    2015-03-01

    Understanding electron transport in epitaxial semiconductor thin films and low dimension systems is crucial for new electro-optic devices. III-V films grown on Si integrate high carrier mobility into the established Si platform, but are susceptible to formation of sub-micron anti-phase domains that possess unwanted Ga-Ga or As-As electron-scattering defects at their boundaries. Optical second-harmonic generation provides sensitive, specific and noninvasive but so far only spatially-integrated characterization for these defects. We introduce a fiber based nearfield scanning optical second harmonic microscopy for the first time to fully resolve the electron scattering boundaries on III-V/Si films. This technique reveal variations in electron scattering boundaries structure as growth conditions, epitaxial film composition, and substrate vary, and are compared with surface topography, darkfield transmission electron microscopy and electron back scatter diffraction. Suppression of the electron-scattering boundaries has been explored.

  17. Effect of Calcination Temperature on Surface Morphology and Photocatalytic Activity in TiO2 Thin Film Prepared by Spin Coating Technique

    Directory of Open Access Journals (Sweden)

    Krishna Mohan Mothi

    2014-10-01

    Full Text Available TiO2 thin films were deposited on glass substrate using Sol-Gel derived precursor by Spin Coating technique at different calcination temperatures. Structural identity of the prepared films was con- firmed by powder X-ray diffraction measurements. Morphology of the films was monitored using Atomic force microscopy and it was observed that calcination temperature of 400 °C favored TiO2 nano- fibers. Photocatalytic activity of the films was checked by observing the degradation of herbicide Atrazine in UV region and the percentage of degradation was analyzed by HPLC method. © 2014 BCREC UNDIP. All rights reservedReceived: 21st November 2013; Revised: 18th March 2014; Accepted: 29th June 2014How to Cite: Mothi, K.M., Soumya, G., Sugunan, S. (2014. Effect of Calcination Temperature on Surface Morphology and Photocatalytic Activity in TiO2 Thin Films Prepared by Spin Coating Technique. Bulletin of Chemical Reaction Engineering & Catalysis, 9 (3: 175-181. (doi:10.9767/bcrec.9.3.5733.175-181Permalink/DOI: http://dx.doi.org/10.9767/bcrec.9.3.5733.175-181

  18. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  19. Thin-film solar cell

    NARCIS (Netherlands)

    Metselaar, J.W.; Kuznetsov, V.I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with t

  20. Performance Comparison of Thin and Thick Film Microstrip Rejection Filters

    OpenAIRE

    Mandhare, M. M.; S.A. Gangal; M. S. Setty; Karekar, R. N.

    1988-01-01

    A performance comparison of microstripline circuits using thin and thick film techniques has been studied, in which a Microstrip rejection filter, in the X-band of microwaves, is used as test circuit. A thick film technique is capable of giving good adhesive films with comparable d.c. sheet resistivity, but other parameters such as open area (porosity), particle size, and edge definition are inferior to thin-film microstrip filters. Despite this drawback, the average value of transmission, tr...

  1. Characterization and antibacterial functions of Ag-TiO2 and W-TiO2 nanostructured thin films prepared by sol-gel/laser-induced technique

    Science.gov (United States)

    Joya, Y. F.; Liu, Z.; Wang, T.

    2011-11-01

    A novel sol-gel/laser-induced technique (SGLIT) has been developed to form nanocrystalline titanium dioxide (TiO2) based thin films with an improved antibacterial performance. TiO2 precursor films loaded with W+6 and Ag+2 ions (W-TiO2, Ag-TiO2) were prepared separately by sol-gel method and spin-coated on microscopic glass slides. As-dried films were subjected to KrF excimer laser pulses at optimized parameters to generate mesoporous anatase and rutile phases at room temperature. The anatase phase was obtained after irradiation with 10 laser pulses only at 75-85 mJ/cm2 fluence in W-TiO2 films. However, higher number of laser pulses and higher W+6 content favored the formation of rutile. Whereas Ag-TiO2 films exhibited anatase up to 200 laser pulses at the same fluence. The films were characterized by using XRD, FEG-SEM, TEM and UV-Vis spectrophotometer to investigate the crystallographic structure, phase transformation, surface morphology, film thickness and the optical properties. A crystallite size of approximately 20 nm was achieved from the anatase prepared by SGLIT. The films exhibited an enhanced antibacterial function against E-Coli cells under the UV excitation.

  2. Effect of Annealing Temperature on the Optical Spectra of CdS Thin Films Deposited at Low Solution Concentrations by Chemical Bath Deposition (CBD Technique

    Directory of Open Access Journals (Sweden)

    Zahid Rizwan

    2011-02-01

    Full Text Available Two different concentrations of CdCl2 and (NH22CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD technique. CdCl2 (0.000312 M and 0.000625 M was employed as a source of Cd2+ while (NH22CS (0.00125 M and 0.000625 M for S2− at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl2 (0.000312 M. Optical energy band gap (Eg, Urbach energy (Eu and absorption coefficient (α have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97% was obtained for the air-annealed films at higher temperature at CdCl2 (0.000312 M.

  3. Domains in Ferroic Crystals and Thin Films

    CERN Document Server

    Tagantsev, Alexander K; Fousek, Jan

    2010-01-01

    Domains in Ferroic Crystals and Thin Films presents experimental findings and theoretical understanding of ferroic (non-magnetic) domains developed during the past 60 years. It addresses the situation by looking specifically at bulk crystals and thin films, with a particular focus on recently-developed microelectronic applications and methods for observation of domains with techniques such as scanning force microscopy, polarized light microscopy, scanning optical microscopy, electron microscopy, and surface decorating techniques. Domains in Ferroic Crystals and Thin Films covers a large area of material properties and effects connected with static and dynamic properties of domains, which are extremely relevant to materials referred to as ferroics. In most solid state physics books, one large group of ferroics is customarily covered: those in which magnetic properties play a dominant role. Numerous books are specifically devoted to magnetic ferroics and cover a wide spectrum of magnetic domain phenomena. In co...

  4. Ethanol sensing of V2O5 thin film prepared by spray pyrolysis technique: Effect of substrate to nozzle distance

    Science.gov (United States)

    Immanuel, P.; Prakash, A. Arockia; Mohan, C. Raja

    2017-05-01

    In the present investigation V2O5 thin films were prepared by spray pyrolysis by varying substrate to nozzle distance (SND) from 20 to 35 cm in steps of 5 cm. The structural studies by XRD results indicates that the crystallinity increases with increase in SND along (101), (201) orientation and for the film prepared at 30 cm gives a good crystallinity. The SEM image shows that the change in morphology, which strongly depends on the SND. Above 30 cm it slightly affects the surface morphology of the V2O5 thinfilm due to agglomeration. The presence of elemental constituents is confirmed from EDAX analysis. The band gap of the film prepared at 30 cm has a lowest value of 2.1 eV. The electrical studies like I-V, Hall Effect measurement and the conductivity is maximum for the film prepared at 30 cm. The ethanol sensing of the prepared film has been studied using Keithley source meter and the detailed results are presented and discussed.

  5. Optical Constants of Cadmium Telluride Thin Film

    Science.gov (United States)

    Nithyakalyani, P.; Pandiaraman, M.; Pannir, P.; Sanjeeviraja, C.; Soundararajan, N.

    2008-04-01

    Cadmium Telluride (CdTe) is II-VI direct band gap semiconductor compound with potential application in Solar Energy conversion process. CdTe thin film of thickness 220 mn was prepared by thermal evaporation technique at a high vacuum better than 10-5 m.bar on well cleaned glass substrates of dimensions (l cm×3 cm). The transmittance spectrum and the reflectance spectrum of the prepared CdTc thin film was recorded using UV-Vis Spectrophotometer in the wavelength range between 300 nm and 900 nm. These spectral data were analyzed and the optical band and optical constants of CdTe Thin film have been determined by adopting suitable relations. The optical band gap of CdTe thin film is found to be 1.56 eV and this value is also agreeing with the published works of CdTe thin film prepared by various techniques. The absorption coefficient (α) has been higher than 106 cm-1. The Refractive index (n) and the Extinction Coefficient (k) are found to be varying from 3.0 to 4.0 and 0.1 Cm-1 to 0.5 Cm-1 respectively by varying the energy from l.0 eV to 4.0 eV. These results are also compared with the literature.

  6. Influence of substrate temperature on physical properties of (111 oriented CdIn2S4 thin films by nebulized spray pyrolysis technique

    Directory of Open Access Journals (Sweden)

    J.Raj Mohamed

    2016-06-01

    Full Text Available In this work, we present the substrate temperature influenced change in the structural, optical, morphological, and electrical conductivity properties of CdIn2S4 thin films deposited on amorphous glass substrates by nebulized spray pyrolysis (NSP technique. X-ray diffraction pattern revealed that the as-deposited CdIn2S4 thin films had a cubic structure with a preferred orientation along (111 plane. The reduced strain by increasing the substrate temperature from 200 to 350 °C increased the average crystalline size from 17 to 33 nm while the formation of secondary phases such as CdIn2O4 and In2O3 reduced it to 21 nm after the substrate temperature at 450 °C. The energy dispersive analysis by X-ray (EDAX studies confirmed the presence of Cd, In, and S. The absorption coefficient, direct band gap energy, Urbach energy, skin depth, and extinction coefficient of CdIn2S4 films were analyzed by optical absorption spectra. The better conductivity and mobility noticed at Ts = 350 °C are explained by carrier concentration and crystalline size. Better optical and electrical conductivity behavior of CdIn2S4 thin film sample suggests for effective PEC solar cell fabrication.

  7. Sprayed lanthanum doped zinc oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bouznit, Y., E-mail: Bouznit80@gmail.com [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Beggah, Y. [Laboratory of Materials Study, Jijel University, Jijel 18000 (Algeria); Ynineb, F. [Laboratory of Thin Films and Interface, University Mentouri, Constantine 25000 (Algeria)

    2012-01-15

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  8. Sprayed lanthanum doped zinc oxide thin films

    Science.gov (United States)

    Bouznit, Y.; Beggah, Y.; Ynineb, F.

    2012-01-01

    Lanthanum doped zinc oxide thin films were deposited on soda-lime glass substrates using a pneumatic spray pyrolysis technique. The films were prepared using different lanthanum concentrations at optimum deposition parameters. We studied the variations in structural, morphological and optical properties of the samples due to the change of doping concentration in precursor solutions. X-ray diffraction (XRD) patterns show that pure and La-doped ZnO thin films are highly textured along c-axis perpendicular to the surface of the substrate. Scanning electron micrographs show that surface morphology of ZnO films undergoes a significant change according to lanthanum doping. All films exhibit a transmittance higher than 80% in the visible region.

  9. Size effects in thin films

    CERN Document Server

    Tellier, CR; Siddall, G

    1982-01-01

    A complete and comprehensive study of transport phenomena in thin continuous metal films, this book reviews work carried out on external-surface and grain-boundary electron scattering and proposes new theoretical equations for transport properties of these films. It presents a complete theoretical view of the field, and considers imperfection and impurity effects.

  10. Thin film corrosion. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Raut, M.K.

    1980-06-01

    Corrosion of chromium/gold (Cr/Au) thin films during photolithography, prebond etching, and cleaning was evaluated. Vapors of chromium etchant, tantalum nitride etchant, and especially gold etchant were found to corrosively attack chromium/gold films. A palladium metal barrier between the gold and chromium layers was found to reduce the corrosion from gold etchant.

  11. Photoluminescence and diode characteristic of ZnO thin films/junctions fabricated by pulsed laser deposition (PLD) technique

    Energy Technology Data Exchange (ETDEWEB)

    Sasaki, Kazuhiro; Komiyama, Takao; Chonan, Yasunori; Yamaguchi, Hiroyuki; Aoyama, Takashi [Department of Electronics and Information Systems, Akita Prefectural University, 84-4 Ebinokuchi, Tsuchiya, Yuri-honjo, Akita 015-0055 (Japan)

    2010-02-15

    ZnO:Ga and ZnO:P films were grown by a pulsed laser deposition (PLD) technique changing the dopant concentrations, and their photoluminescence (PL) spectra were obtained. Then, ZnO:P/ZnO:Ga junctions were fabricated and their junction characteristics were evaluated. As the Ga concentration increased in the films, the PL intensity was decreased while as the P concentration increased, the PL intensity was increased. The maximum PL intensities were obtained for the films of 0.5%(Ga) and 7.0% (P), respectively. Rectifying junction characteristics were observed only for the combination of 0.5-1.0% (Ga) and 5.0% (P) films. Mutual dopant diffusion is supposed to explain the relation between the PL and the junction characteristics. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Evidence of room temperature ferromagnetism in argon/oxygen annealed TiO{sub 2} thin films deposited by electron beam evaporation technique

    Energy Technology Data Exchange (ETDEWEB)

    Mohanty, P. [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kabiraj, D. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Mandal, R.K. [Department of Metallurgical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Kulriya, P.K. [Inter University Accelerator Center, Aruna Asaf Ali Marg, New Delhi 110067 (India); Sinha, A.S.K. [Department of Chemical Engineering, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India); Rath, Chandana, E-mail: chandanarath@yahoo.com [School of Materials Science and Technology, Indian Institute of Technology, Banaras Hindu University, Varanasi 221005 (India)

    2014-04-15

    TiO{sub 2} thin films deposited by electron beam evaporation technique annealed in either O{sub 2} or Ar atmosphere showed ferromagnetism at room temperature. The pristine amorphous film demonstrates anatase phase after annealing under Ar/O{sub 2} atmosphere. While the pristine film shows a super-paramagnetic behavior, both O{sub 2} and Ar annealed films display hysteresis at 300 K. X-ray photo emission spectroscopy (XPS), Raman spectroscopy, Rutherford’s backscattering spectroscopy (RBS), cross-sectional transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS) were used to refute the possible role of impurities/contaminants in magnetic properties of the films. The saturation magnetization of the O{sub 2} annealed film is found to be higher than the Ar annealed one. It is revealed from shifting of O 1s and Ti 2p core level spectra as well as from the enhancement of high binding energy component of O 1s spectra that the higher magnetic moment is associated with higher oxygen vacancies. In addition, O{sub 2} annealed film demonstrates better crystallinity, uniform deposition and smoother surface than that of the Ar annealed one from glancing angle X-ray diffraction (GAXRD) and atomic force microscopy (AFM). We conclude that although ferromagnetism is due to oxygen vacancies, the higher magnetization in O{sub 2} annealed film could be due to crystallinity, which has been observed earlier in Co doped TiO{sub 2} film deposited by pulsed laser deposition (Mohanty et al., 2012 [10]). - Highlights: • TiO{sub 2} films were deposited by e-beam evaporation technique and post annealed under O{sub 2}/Ar at 500 °C. • The pristine film shows SPM behavior where as O{sub 2} and Ar annealed films demonstrate RTFM. • The presence of magnetic impurities has been discarded by various characterization techniques. • The magnetic moment is found to be higher in O{sub 2} annealed film than the Ar annealed one. • The higher M{sub s} in O{sub 2

  13. Characterization of Highly Efficient CdTe Thin Film Solar Cells by the Capacitance-Voltage Profiling Technique

    Science.gov (United States)

    Okamoto, Tamotsu; Yamada, Akira; Konagai, Makoto

    2000-05-01

    The electrical properties of highly efficient CdTe thin film solar cells prepared by close-spaced sublimation (CSS) were investigated by capacitance-voltage (C-V) measurement. According to the dependence of the cell performance on the substrate temperature in the CSS process, the open-circuit voltage (Voc) increased with increasing the substrate temperature below 630°C@. The carrier concentration profiles revealed that the net acceptor concentration exponentially increased from the CdS/CdTe interface to the rear and that the acceptor concentration increased with increasing substrate temperature. This result suggests that Voc is improved as a result of the increase in the acceptor concentration.

  14. Magnetically actuated peel test for thin films

    Energy Technology Data Exchange (ETDEWEB)

    Ostrowicki, G.T.; Sitaraman, S.K., E-mail: suresh.sitaraman@me.gatech.edu

    2012-03-30

    Delamination along thin film interfaces is a prevalent failure mechanism in microelectronic, photonic, microelectromechanical systems, and other engineering applications. Current interfacial fracture test techniques specific to thin films are limited by either sophisticated mechanical fixturing, physical contact near the crack tip, or complicated stress fields. Moreover, these techniques are generally not suitable for investigating fatigue crack propagation under cyclical loading. Thus, a fixtureless and noncontact experimental test technique with potential for fatigue loading is proposed and implemented to study interfacial fracture toughness for thin film systems. The proposed test incorporates permanent magnets surface mounted onto micro-fabricated released thin film structures. An applied external magnetic field induces noncontact loading to initiate delamination along the interface between the thin film and underlying substrate. Characterization of the critical peel force and peel angle is accomplished through in situ deflection measurements, from which the fracture toughness can be inferred. The test method was used to obtain interfacial fracture strength of 0.8-1.9 J/m{sup 2} for 1.5-1.7 {mu}m electroplated copper on natively oxidized silicon substrates. - Highlights: Black-Right-Pointing-Pointer Non-contact magnetic actuation test for interfacial fracture characterization. Black-Right-Pointing-Pointer Applied load is determined through voltage applied to the driving electromagnet. Black-Right-Pointing-Pointer Displacement and delamination propagation is measured using an optical profiler. Black-Right-Pointing-Pointer Critical peel force and peel angle is measured for electroplated Cu thin-film on Si. Black-Right-Pointing-Pointer The measured interfacial fracture energy of Cu/Si interface is 0.8-1.9 J/m{sup 2}.

  15. Feasibility Study of Thin Film Thermocouple Piles

    Science.gov (United States)

    Sisk, R. C.

    2001-01-01

    Historically, thermopile detectors, generators, and refrigerators based on bulk materials have been used to measure temperature, generate power for spacecraft, and cool sensors for scientific investigations. New potential uses of small, low-power, thin film thermopiles are in the area of microelectromechanical systems since power requirements decrease as electrical and mechanical machines shrink in size. In this research activity, thin film thermopile devices are fabricated utilizing radio frequency sputter coating and photoresist lift-off techniques. Electrical characterizations are performed on two designs in order to investigate the feasibility of generating small amounts of power, utilizing any available waste heat as the energy source.

  16. Micro-sensor thin-film anemometer

    Science.gov (United States)

    Sheplak, Mark (Inventor); McGinley, Catherine B. (Inventor); Spina, Eric F. (Inventor); Stephens, Ralph M. (Inventor); Hopson, Jr., Purnell (Inventor); Cruz, Vincent B. (Inventor)

    1996-01-01

    A device for measuring turbulence in high-speed flows is provided which includes a micro-sensor thin-film probe. The probe is formed from a single crystal of aluminum oxide having a 14.degree. half-wedge shaped portion. The tip of the half-wedge is rounded and has a thin-film sensor attached along the stagnation line. The bottom surface of the half-wedge is tilted upward to relieve shock induced disturbances created by the curved tip of the half-wedge. The sensor is applied using a microphotolithography technique.

  17. Crystal structure of fiber structured pentacene thin films

    OpenAIRE

    2007-01-01

    This PhD thesis presents a technique based on the grazing incidence crystal truncation rod (GI-CTR) X-ray diffraction method used to solve the crystal structure of substrate induced fiber structured organic thin films. The crystal structures of pentacene thin films grown on technologically relevant gate dielectric substrates are reported. It is widely recognized, that the intrinsic charge transport properties in organic thin film transistors (OTFTs) depend strongly on the crystal structur...

  18. Effect of Reaction Temperature and Time on the Structural Properties of Cu(In,Ga)Se2 Thin Films Deposited by Sequential Elemental Layer Technique

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    Thin films of copper indium gallium selenide Cu(In,Ga)Se2 (CIGS) were prepared by sequential elemental layer deposition in vacuum at room temperature. The as-deposited films were heated in vacuum for compound formation, and were studied at temperature as high as 1250℃ for the first time. These films were concurrently studied for their structural properties by X-ray diffraction (XRD) technique. The XRD analyses include phase transition studies, grain size variation and microstrain measurements with the reaction temperature and time.It has been observed that there are three distinct regions of variation in all these parameters. These regions belong to three temperature regimes: <450℃, 450-950℃, and >950℃. It is also seen that the compound formation starts at 250℃, with ternary phases appearing at 350℃ or above. Whereas, there is another phase shift at 950℃ without any preference to the quaternary compound.

  19. Thin-film metal hydrides.

    Science.gov (United States)

    Remhof, Arndt; Borgschulte, Andreas

    2008-12-01

    The goal of the medieval alchemist, the chemical transformation of common metals into nobel metals, will forever be a dream. However, key characteristics of metals, such as their electronic band structure and, consequently, their electric, magnetic and optical properties, can be tailored by controlled hydrogen doping. Due to their morphology and well-defined geometry with flat, coplanar surfaces/interfaces, novel phenomena may be observed in thin films. Prominent examples are the eye-catching hydrogen switchable mirror effect, the visualization of solid-state diffusion and the formation of complex surface morphologies. Thin films do not suffer as much from embrittlement and/or decrepitation as bulk materials, allowing the study of cyclic absorption and desorption. Therefore, thin-metal hydride films are used as model systems to study metal-insulator transitions, for high throughput combinatorial research or they may be used as indicator layers to study hydrogen diffusion. They can be found in technological applications as hydrogen sensors, in electrochromic and thermochromic devices. In this review, we discuss the effect of hydrogen loading of thin niobium and yttrium films as archetypical examples of a transition metal and a rare earth metal, respectively. Our focus thereby lies on the hydrogen induced changes of the electronic structure and the morphology of the thin films, their optical properties, the visualization and the control of hydrogen diffusion and on the study of surface phenomena and catalysis.

  20. Spectroscopic ellipsometry of Zn(1-x)Cu(x)O thin films based on a modified sol-gel dip-coating technique.

    Science.gov (United States)

    Al-Khanbashi, Hibah A; Shirbeeny, W; Al-Ghamdi, A A; Bronstein, Lyudmila M; Mahmoud, Waleed E

    2014-01-24

    Nanocrystalline Zn(1-x)Cu(x)O thin films (x=0, 0.01, 0.02, 0.03, 0.04 and 0.05) were synthesized by sol-gel dip-coating technique on a quartz substrate. These films were annealed at 350°C for 2 h. The X-ray diffraction showed a hexagonal crystal structure with high intensity peak for the (002) reflection plane indicating preferential growth along the c-axis of the crystal lattice. The peak position related to the (002) peak was shifted as a result of the copper ion incorporation, confirming the interstitial substitution of the zinc ions by the copper ions. This interstitial substitution leads to a decrease of an average crystallite size and lattice constants and an increase of the micro-strain up to 2 at.% of the copper amount. The surface morphology was explored by scanning electron microscopy which confirmed the homogenous distribution of nanoparticles in the deposited films along the quartz substrates. The energy dispersion X-ray spectroscopy revealed absence of impurities in the as-deposited films. The high resolution electron microscopy and selected area electron diffraction depicted that the films have polycrystalline nature. The film thickness and optical constants of the Zn(1-x)Cu(x)O thin films were estimated by fitting the spectroscopic ellipsometric data (ψ and Δ) using three different models. The refractive index was fitted using harmonic oscillator model from which the oscillator and the dispersive energies were found. The dielectric constant, dielectric loss, energy loss functions were also determined.

  1. Birefringent non-polarizing thin film design

    Institute of Scientific and Technical Information of China (English)

    QI Hongji; HONG Ruijin; HE Hongbo; SHAO Jianda; FAN Zhengxiu

    2005-01-01

    In this paper, 2×2 characteristic matrices of uniaxially anisotropic thin film for extraordinary and ordinary wave are deduced at oblique incidence. Furthermore, the reflectance and transmittance of thin films are calculated separately for two polarizations, which provide a new concept for designing non-polarizing thin films at oblique incidence. Besides, using the multilayer birefringent thin films, non-polarizing designs, such as beam splitter thin film at single wavelength, edge filter and antireflection thin film over visible spectral region are obtained at oblique incidence.

  2. Magnetization in permalloy thin films

    Indian Academy of Sciences (India)

    Rachana Gupta; Mukul Gupta; Thomas Gutberlet

    2008-11-01

    Thin films of permalloy (Ni80Fe20) were prepared using an Ar+N2 mixture with magnetron sputtering technique at ambient temperature. The film prepared with only Ar gas shows reflections corresponding to the permalloy phase in X-ray diffraction (XRD) pattern. The addition of nitrogen during sputtering results in broadening of the peaks in XRD pattern, which finally leads to an amorphous phase. The - loop for the sample prepared with only Ar gas is matching well with the values obtained for the permalloy. For the samples prepared with increased nitrogen partial pressure the magnetic moment decreased rapidly and the values of coercivity increased. The polarized neutron reflectivity measurements (PNR) were performed in the sample prepared with only Ar gas and with nitrogen partial pressure of 5 and 10%. It was found that the spin-up and spin-down reflectivities show exactly similar reflectivity for the sample prepared with Ar gas alone, while PNR measurements on 5 and 10% sample show splitting in the spin-up and spin-down reflectivity.

  3. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    Science.gov (United States)

    Abdel Rafea, M.; Roushdy, N.

    2009-01-01

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu2O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu2O is the most probable crystalline phase in the film, while Cu2O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu2O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  4. Determination of the optical band gap for amorphous and nanocrystalline copper oxide thin films prepared by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Abdel Rafea, M; Roushdy, N [Electronic Materials Department, Advanced Technologies and New Materials Institute, Mubarak City for Scientific Research and Technology Applications, PO Box 21934, New Borg El-Arab City, Alexandria (Egypt)], E-mail: m.abdelrafea@mucsat.sci.eg

    2009-01-07

    Amorphous copper oxide films were deposited using the SILAR technique. Both Cu{sub 2}O and CuO crystallographic phases exist in deposited and annealed films. Crystallization and growth processes by annealing at temperatures up to 823 K form grains with nano- and micro-spherical shapes. The calculated crystallite size from the XRD measurement was found to be in the range 14-21 nm while nano-spheres in the diameter range 50-100 nm were observed by SEM micrographs. The band gap for amorphous film was found to be 2.3 eV which increased slowly to 2.4 eV by annealing the film at 373 K. This was explained by defect redistribution in amorphous films. Annealing in the temperature range 373-673 K decreased the band gap gradually to 1.85 eV. The decrease of the band gap with annealing temperature in the range 373-673 K agrees well with the Brus model of the energy gap confinement effect in nanostructured semiconducting materials. Annealing in the temperature range 673-823 K decreases the band gap slowly to 1.7 eV due to the smaller contribution of the confinement effect. Below 573 K, Cu{sub 2}O is the most probable crystalline phase in the film, while Cu{sub 2}O and CuO crystalline phases may coexist at annealing temperatures above 573 K due to further oxidation of Cu{sub 2}O. A wider transmittance spectral window in the visible region was obtained by controlling the annealing conditions of the amorphous copper oxide film and its applicability to the window layer of solar cell was suggested.

  5. Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com [Iraqi Ministry of Education, Anbar (Iraq); Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, University Sains Malaysia,11800 Penang (Malaysia)

    2016-07-19

    Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

  6. Thin-film forces in pseudoemulsion films

    Energy Technology Data Exchange (ETDEWEB)

    Bergeron, V.; Radke, C.J. [California Univ., Berkeley, CA (United States). Dept. of Chemical Engineering]|[Lawrence Berkeley Lab., CA (United States)

    1991-06-01

    Use of foam for enhanced oil recovery (EOR) has shown recent success in steam-flooding field applications. Foam can also provide an effective barrier against gas coning in thin oil zones. Both of these applications stem from the unique mobility-control properties a stable foam possesses when it exists in porous media. Unfortunately, oil has a major destabilizing effect on foam. Therefore, it is important for EOR applications to understand how oil destroys foam. Studies all indicate that stabilization of the pseudoemulsion film is critical to maintain foam stability in the presence of oil. Hence, to aid in design of surfactant formulations for foam insensitivity to oil the authors pursue direct measurement of the thin-film or disjoining forces that stabilize pseudoemulsion films. Experimental procedures and preliminary results are described.

  7. Growth and characterization of tin disulfide (SnS{sub 2}) thin film deposited by successive ionic layer adsorption and reaction (SILAR) technique

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, N.G. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Sagade, A.A. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Gudage, Y.G. [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India); Lokhande, C.D. [Thin film Physics Laboratory, Department of Physics, Shivaji University, Kolhapur 416004 (India); Sharma, Ramphal [Thin film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University, Aurangabad 431004 (India)]. E-mail: ramphalsharma@yahoo.com

    2007-06-14

    Thin films of tin disulfide (SnS{sub 2}) have been deposited by using low cost successive ionic layer adsorption and reaction (SILAR) technique. The deposition parameters such as SILAR cycles (60), immersion time (20 s), rinsing time (10 s) and deposition temperature (27 {sup o}C) were optimized to obtain good quality of films. Physical investigations were made to study the structural, optical and electrical properties. X-ray diffraction (XRD) patterns reveal that the deposited SnS{sub 2} thin films have hexagonal crystal structure. Energy dispersive X-ray analysis (EDAX) indicated elemental ratio close to those for tin disulfide (SnS{sub (2.02)}). Uniform deposition of the material over the entire glass substrate was revealed by scanning electron microscopy (SEM). Atomic force microscopy (AFM) showed the film is uniform and the substrate surface is well covered with small spherical grains merged in each other. A direct band gap of 2.22 eV was obtained. Photoluminescence (PL) showed two strong peaks corresponding to green and red emission. Ag/SnS{sub 2} junction showed Schottky diode like I-V characteristics. The barrier height calculated was 0.22 eV. Thermoelectric power (TEP) properties showed that tin disulfide exhibits n-type conductivity.

  8. Numerical solution for 5-layer laminate technique to determine saturation solubility of a drug in a thin film of pressure sensitive adhesive.

    Science.gov (United States)

    Bänsch, Eberhard; Reismann, Simone; Lee, Geoffrey

    2014-08-01

    A numerical solution of the one-dimensional diffusion equation is presented to describe the 5-layer laminate technique for estimating the saturation solubility of a drug in a thin polymer film. The boundary and initial conditions encompass a donor layer, a separating membrane, and an acceptor layer. Alteration of the drug's partition coefficient between donor and separating membrane has little influence on drug accumulation with the acceptor. The diffusivity in the separating membrane should be high to promote a short experimental time to achieve saturation equilibrium in the acceptor layer. The essential parameter to give rapid equilibrium is the thickness of the acceptor polymer film. For values of diffusivity typical for drugs of molecular weight around 500 an acceptor layer thickness of 10 µm-20 µm is required to achieve equilibrium within less than 10 d. These simulations allow the selection of suitable experimental conditions to make the 5-layer laminate technique a viable method for routine use.

  9. Chemical solution deposition of functional oxide thin films

    CERN Document Server

    Schneller, Theodor; Kosec, Marija

    2014-01-01

    Chemical Solution Deposition (CSD) is a highly-flexible and inexpensive technique for the fabrication of functional oxide thin films. Featuring nearly 400 illustrations, this text covers all aspects of the technique.

  10. Epitaxy of layered semiconductor thin films

    Science.gov (United States)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  11. Effect of the substrate temperature on the physical properties of molybdenum tri-oxide thin films obtained through the spray pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, H.M. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Torres, J., E-mail: njtorress@unal.edu.co [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Lopez Carreno, L.D. [Grupo de Materiales con Aplicaciones Tecnologicas, Departamento de Fisica Universidad Nacional de Colombia sede Bogota (Colombia); Rodriguez-Garcia, M.E. [Departamento de Nanotecnologia, Centro de Fisica Aplicada y Tecnologia Avanzada, Universidad Nacional Autonoma de Mexico, Campus Juriquilla, Queretaro, Qro., Mexico (Colombia)

    2013-01-15

    Polycrystalline molybdenum tri-oxide thin films were prepared using the spray pyrolysis technique; a 0.1 M solution of ammonium molybdate tetra-hydrated was used as a precursor. The samples were prepared on Corning glass substrates maintained at temperatures ranging between 423 and 673 K. The samples were characterized through micro Raman, X-ray diffraction, optical transmittance and DC electrical conductivity. The species MoO{sub 3} (H{sub 2}O){sub 2} was found in the sample prepared at a substrate temperature of 423 K. As the substrate temperature rises, the water disappears and the samples crystallize into {alpha}-MoO{sub 3}. The optical gap diminishes as the substrate temperature rises. Two electrical transport mechanisms were found: hopping under 200 K and intrinsic conduction over 200 K. The MoO{sub 3} films' sensitivity was analyzed for CO and H{sub 2}O in the temperature range 160 to 360 K; the results indicate that CO and H{sub 2}O have a reduction character. In all cases, it was found that the sensitivity to CO is lower than that to H{sub 2}O. - Highlights: Black-Right-Pointing-Pointer A low cost technique is used which produces good material. Black-Right-Pointing-Pointer Thin films are prepared using ammonium molybdate tetra hydrated. Black-Right-Pointing-Pointer The control of the physical properties of the samples could be done. Black-Right-Pointing-Pointer A calculation method is proposed to determine the material optical properties. Black-Right-Pointing-Pointer The MoO{sub 3} thin films prepared by spray pyrolysis could be used as gas sensor.

  12. Yttrium doped BaCeO{sub 3} thin films by spray pyrolysis technique for application in solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Dubal, S.U.; Jamale, A.P.; Jadhav, S.T.; Patil, S.P.; Bhosale, C.H. [Department of Physics, Shivaji University, Kolhapur 416 004 (India); Jadhav, L.D., E-mail: ldjadhav.phy@gmail.com [Department of Physics, Rajaram College, Kolhapur 416 004 (India)

    2014-02-25

    Highlights: • BCY20 thin electrolyte was deposited by economical spray pyrolysis technique. • Solution concentration and annealing temperature affects structure and morphology. • Excellent agreement with XRD data of lattice parameter. • The dc conductivity in argon at 600 °C was 4.25 × 10{sup −3} S cm{sup −1}. -- Abstract: Yttrium doped barium cerate (BCY) a solid state ion conductor which exhibits proton conductivity under proper atmospheric conditions, is used as an electrolyte in a solid oxide fuel cell (SOFCs). In present work, nanocrystalline BaCe{sub 0.8}Y{sub 0.2}O{sub 2.9} (BCY20) thin films were successfully deposited onto alumina substrates by simple and economical spray pyrolysis technique (SPT) at 250 °C. The effect of solution concentration and annealing on physico-chemical properties of BCY20 thin film has been studied. The X-ray diffraction (XRD) studies of spray pyrolysed BCY20 films revealed polycrystalline (crystallite size 35 nm) orthorhombic structure with lattice parameters a = 8.77 Å, b = 6.234 Å and c = 6.223 Å. The scanning electron micrographs showed dense morphology which is very useful for electrolyte. The stoichiometry was confirmed by elemental analysis and the estimated atomic ratio was in good agreement with that of the precursor solution ratio. The most intense band at 353.26 cm{sup −1} observed in room temperature Raman spectrum of BCY20 film was due to vibrational mode of barium cerate. The FTIR spectra with heat treatment shows no carbon based vibration bonds, revealing absence of carbon based surface impurities in the sample. The dc conductivities measured in air and argon atmospheres at 600 °C were 1.7 × 10{sup −3} and 4.25 × 10{sup −3} S cm{sup −1}, respectively.

  13. Structural and Optical Properties of Nanoscale Galinobisuitite Thin Films

    Directory of Open Access Journals (Sweden)

    Omar H. Abd-Elkader

    2014-01-01

    Full Text Available Galinobisuitite thin films of (Bi2S3(PbS were prepared using the chemical bath deposition technique (CBD. Thin films were prepared by a modified chemical deposition process by allowing the triethanolamine (TEA complex of Bi3+ and Pb2+ to react with S2− ions, which are released slowly by the dissociation of the thiourea (TU solution. The films are polycrystalline and the average crystallite size is 35 nm. The composition of the films was measured using the atomic absorption spectroscopy (AAS technique. The films are very adherent to the substrates. The crystal structure of Galinobisuitite thin films was calculated by using the X-ray diffraction (XRD technique. The surface morphology and roughness of the films were studied using scanning electron microscopes (SEM, transmission electron microscopes (TEM and stylus profilers respectively. The optical band gaps of the films were estimated from optical measurements.

  14. Beryllium thin films for resistor applications

    Science.gov (United States)

    Fiet, O.

    1972-01-01

    Beryllium thin films have a protective oxidation resistant property at high temperature and high recrystallization temperature. However, the experimental film has very low temperature coefficient of resistance.

  15. Thin films under chemical stress

    Energy Technology Data Exchange (ETDEWEB)

    1991-01-01

    The goal of work on this project has been develop a set of experimental tools to allow investigators interested in transport, binding, and segregation phenomena in composite thin film structures to study these phenomena in situ. Work to-date has focuses on combining novel spatially-directed optical excitation phenomena, e.g. waveguide eigenmodes in thin dielectric slabs, surface plasmon excitations at metal-dielectric interfaces, with standard spectroscopies to understand dynamic processes in thin films and at interfaces. There have been two main scientific thrusts in the work and an additional technical project. In one thrust we have sought to develop experimental tools which will allow us to understand the chemical and physical changes which take place when thin polymer films are placed under chemical stress. In principle this stress may occur because the film is being swelled by a penetrant entrained in solvent, because interfacial reactions are occurring at one or more boundaries within the film structure, or because some component of the film is responding to an external stimulus (e.g. pH, temperature, electric field, or radiation). However all work to-date has focused on obtaining a clearer understanding penetrant transport phenomena. The other thrust has addressed the kinetics of adsorption of model n-alkanoic acids from organic solvents. Both of these thrusts are important within the context of our long-term goal of understanding the behavior of composite structures, composed of thin organic polymer films interspersed with Langmuir-Blodgett (LB) and self-assembled monolayers. In addition there has been a good deal of work to develop the local technical capability to fabricate grating couplers for optical waveguide excitation. This work, which is subsidiary to the main scientific goals of the project, has been successfully completed and will be detailed as well. 41 refs., 10 figs.

  16. The Potentiostatic Electrodeposition of Indium doped Aluminium Selenide Thin Films

    Directory of Open Access Journals (Sweden)

    R.K. Pathak and Sipi Mohan

    2013-12-01

    Full Text Available The In containing AlSe thin films were electrosynthesized by electrochemical co-deposition technique. The morphological properties of thin films were studied through the Scanning Electron Micrograph (SEM while the structural features through X-Ray Diffraction technique (XRD. The deposition current along with the film thickness values, the charge carrier density, flat band potential, corrosion characteristics i.e., corrosion current, corrosion potential and corrosion rate were calculated.

  17. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; Kuznetsov, V. I.

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  18. Thin-film solar cell

    OpenAIRE

    Metselaar, J.W.; V. I. Kuznetsov

    1998-01-01

    The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with the light-collecting surface. In this context, the relationships 45 < alpha < 135 degrees and 45 < beta < 135 degrees apply. The invention also relates to a panel provided with a plurality of such t...

  19. Micromotors using magnetostrictive thin films

    Science.gov (United States)

    Claeyssen, Frank; Le Letty, Ronan; Barillot, Francois; Betz, Jochen; MacKay, Ken; Givord, Dominique; Bouchilloux, Philippe

    1998-07-01

    This study deals with a micromotor based on the use of magnetostrictive thin films. This motor belongs to the category of the Standing Wave Ultrasonic Motors. The active part of the motor is the rotor, which is a 100 micrometers thick ring vibrating in a flexural mode. Teeth (300 micrometers high) are placed on special positions of the rotor and produce an oblique motion which can induce the relative motion of any object in contact with them. The magnetic excitation field is radial and uses the transverse coupling of the 4 micrometers thick magnetostrictive film. The film, deposited by sputtering on the ring, consists of layers of different rare-earth/iron alloys and was developed during a European Brite-Euram project. The finite element technique was used in order to design a prototype of the motor and to optimize the active rotor and the energizer coil. The prototype we built delivered a speed of 30 turns per minute with a torque of 2 (mu) N.m (without prestress applied on the rotor). Our experimental results show that the performance of this motor could easily be increased by a factor of 5. The main advantage of this motor is the fact that it is remotely powered and controlled. The excitation coil, which provides both power and control, can be placed away from the active rotor. Moreover, the rotor is completely wireless and is not connected to its support or to any other part. It is interesting to note that it would not be possible to build this type of motor using piezoelectric technology. Medical applications of magnetostrictive micromotors could be found for internal microdistributors of medication (the coil staying outside the body). Other applications include remote control micropositioning, micropositioning of optical components, and for the actuation of systems such as valves, electrical switches, and relays.

  20. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-12-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10(-13)A, I on/I off ratio of 1.4 × 10(7), subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  1. Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique

    Science.gov (United States)

    Li, Huijin; Han, Dedong; Liu, Liqiao; Dong, Junchen; Cui, Guodong; Zhang, Shengdong; Zhang, Xing; Wang, Yi

    2017-03-01

    This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/ I off ratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.

  2. A compact model and direct parameters extraction techniques For amorphous gallium-indium-zinc-oxide thin film transistors

    Science.gov (United States)

    Moldovan, Oana; Castro-Carranza, Alejandra; Cerdeira, Antonio; Estrada, Magali; Barquinha, Pedro; Martins, Rodrigo; Fortunato, Elvira; Miljakovic, Slobodan; Iñiguez, Benjamin

    2016-12-01

    An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices.

  3. Effect of annealing temperature on the optical spectra of CdS thin films deposited at low solution concentrations by Chemical Bath Deposition (CBD) Technique.

    Science.gov (United States)

    Rizwan, Zahid; Zakaria, Azmi; Mohd Ghazali, Mohd Sabri; Jafari, Atefeh; Din, Fasih Ud; Zamiri, Reza

    2011-02-22

    Two different concentrations of CdCl(2) and (NH(2))(2)CS were used to prepare CdS thin films, to be deposited on glass substrate by chemical bath deposition (CBD) technique. CdCl(2) (0.000312 M and 0.000625 M) was employed as a source of Cd(2+) while (NH(2))(2)CS (0.00125 M and 0.000625 M) for S(2-) at a constant bath temperature of 70 °C. Adhesion of the deposited films was found to be very good for all the solution concentrations of both reagents. The films were air-annealed at a temperature between 200 °C to 360 °C for one hour. The minimum thickness was observed to be 33.6 nm for film annealed at 320 °C. XRD analyses reveal that the films were cubic along with peaks of hexagonal phase for all film samples. The crystallite size of the films decreased from 41.4 nm to 7.4 nm with the increase of annealing temperature for the CdCl(2) (0.000312 M). Optical energy band gap (E(g)), Urbach energy (E(u)) and absorption coefficient (α) have been calculated from the transmission spectral data. These parameters have been discussed as a function of annealing temperature and solution concentration. The best transmission (about 97%) was obtained for the air-annealed films at higher temperature at CdCl(2) (0.000312 M).

  4. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Science.gov (United States)

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  5. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Directory of Open Access Journals (Sweden)

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  6. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of Fe{sub x}S{sub x} nano thin films deposited by SILAR technique

    Energy Technology Data Exchange (ETDEWEB)

    Manikandan, K., E-mail: 1984manikandan@gmail.com [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Mani, P. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Surendra Dilip, C. [Department of Chemistry, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India); Valli, S. [Department of Physics, M.I.E.T. Arts and Science College, Tiruchirappalli 620 007, Tamilnadu (India); Fermi Hilbert Inbaraj, P.; Joseph Prince, J. [Department of Physics, Anna University BIT Campus, Tiruchirappalli 620 024, Tamilnadu (India)

    2014-01-01

    Iron sulfide thin films (Fe{sub x}S{sub x}) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV–vis analysis.

  7. Effect of complexing agent TEA: The structural, morphological, topographical and optical properties of FexSx nano thin films deposited by SILAR technique

    Science.gov (United States)

    Manikandan, K.; Mani, P.; Surendra Dilip, C.; Valli, S.; Fermi Hilbert Inbaraj, P.; Joseph Prince, J.

    2014-01-01

    Iron sulfide thin films (FexSx) (x = 0.05 M, 0.10 M, 0.15 M, 0.20 M and 0.25 M) were deposited by SILAR method from equimolar and equivolume aqueous solutions of ferrous nitrate and sodium sulfide with the addition of complexing agent TEA. The structural, morphological and optical characteristics of the films were derived from X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-vis spectral techniques. The mixed characteristics (crystalline and amorphous) of the deposited films and the increasing crystalline qualities with the concentrations were understood from the XRD analysis. The grain sizes and roughness of the films were decreases with the increasing concentration and also at the higher concentration films are shown by the same images presence of hexagonal like crystallite structure. The influence of complexing agent TEA on the surface roughness and morphological properties are confirmed by the atomic force microscope (AFM) results. The effect of increasing substrate concentration on the absorption and transmission measurements and its impact on the optical band-gap energy were enumerated from the UV-vis analysis.

  8. Effect of variation of precursor concentration on structural, microstructural, optical and gas sensing properties of nanocrystalline TiO2 thin films prepared by spray pyrolysis techniques

    Indian Academy of Sciences (India)

    Lalchand A Patil; Dinesh N Suryawanshi; Idris G Pathan; Dhanashri G Patil

    2013-12-01

    The objective of the present paper is to investigate the effect of variation of precursor concentration (0.01, 0.02 and 0.03 M) on the structural, microstructural, optical and gas sensing properties of TiO2 thin films. Titanium dioxide (TiO2) films were prepared from aqueous solution of titanium chloride (TiCl3.6H2O, 99.9%pure, Merckmade, Germany) onto the glass substrates heated at a temperature of 350 °C by the spray pyrolysis technique. Bandgap energy of the films vary from 3.28 to 3.29 eV. X-ray diffraction shows that films to be nanocrystalline with anatase phase having tetragonal crystal structure. The values calculated from electron diffraction patterns (TEM) were observed to be matching with values calculated from XRD. Transmission electron microscopy (TEM) reveled that grain sizes were observed to increase (10–29 nm) with an increase in the concentration of precursor solution. The gas sensing performance of the films was tested.

  9. Properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by metalorganic solution deposition technique for microwave applications

    Science.gov (United States)

    Joshi, P. C.; Desu, S. B.

    1998-08-01

    We report on the properties of Ba(Mg1/3Ta2/3)O3 thin films prepared by the metalorganic solution deposition technique. Bulk Ba(Mg1/3Ta2/3)O3 ceramics have shown excellent dielectric properties at microwave frequencies; however, the high sintering temperature of bulk material is the major obstacle in their use as dielectric resonators to miniaturize microwave circuits. It was possible to obtain an ordered-perovskite phase of 0.3-μm-thick Ba(Mg1/3Ta2/3)O3 films with trigonal symmetry at an annealing temperature of 700 °C, which is much lower than the bulk sintering temperatures. The electrical measurements were conducted on Pt/Ba(Mg1/3Ta2/3)O3/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor at 100 kHz were 22.2 and 0.009, respectively. The dielectric constant of thin films was comparable to the typical values (ɛr˜23.5-25) reported for bulk ceramics. The temperature coefficient of capacitance was -145 ppm/°C in the measured temperature range of 25-125 °C. The leakage current density was lower than 10-7 A/cm2 at an applied electric field of 0.5 MV/cm. The high dielectric constant, which is comparable to bulk, low dielectric loss, and good temperature and bias stability suggest the suitability of Ba(Mg1/3Ta2/3)O3 thin films for microwave communications and integrated capacitor applications.

  10. Ternary compound thin film solar cells

    Science.gov (United States)

    Kazmerski, L. L.

    1975-01-01

    A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

  11. Humidity sensing characteristics of hydrotungstite thin films

    Indian Academy of Sciences (India)

    G V Kunte; S A Shivashankar; A M Umarji

    2008-11-01

    Thin films of the hydrated phase of tungsten oxide, hydrotungstite (H2WO4.H2O), have been grown on glass substrates using a dip-coating technique. The -axis oriented films have been characterized by X-ray diffraction and scanning electron microscopy. The electrical conductivity of the films is observed to vary with humidity and selectively show high sensitivity to moisture at room temperature. In order to understand the mechanism of sensing, the films were examined by X-ray diffraction at elevated temperatures and in controlled atmospheres. Based on these observations and on conductivity measurements, a novel sensing mechanism based on protonic conduction within the surface layers adsorbed onto the hydrotungstite film is proposed.

  12. Shielding superconductors with thin films

    CERN Document Server

    Posen, Sam; Catelani, Gianluigi; Liepe, Matthias U; Sethna, James P

    2015-01-01

    Determining the optimal arrangement of superconducting layers to withstand large amplitude AC magnetic fields is important for certain applications such as superconducting radiofrequency cavities. In this paper, we evaluate the shielding potential of the superconducting film/insulating film/superconductor (SIS') structure, a configuration that could provide benefits in screening large AC magnetic fields. After establishing that for high frequency magnetic fields, flux penetration must be avoided, the superheating field of the structure is calculated in the London limit both numerically and, for thin films, analytically. For intermediate film thicknesses and realistic material parameters we also solve numerically the Ginzburg-Landau equations. It is shown that a small enhancement of the superheating field is possible, on the order of a few percent, for the SIS' structure relative to a bulk superconductor of the film material, if the materials and thicknesses are chosen appropriately.

  13. Thin Film Research. Volume 1

    Science.gov (United States)

    1985-05-30

    1928), and later by Coper, Frommer and Zocher (1931), followed. From that time, when thin film technology was in its early stages of evolution, we...personal communication (1983). Cau, Marcel, Comtes Rendues 186, 1293 (1928). Coper, H. K., Frommer , L., and Zocher, H., Ztschr. Elektrochem. 37, 571

  14. Crystalline nanostructured Cu doped ZnO thin films grown at room temperature by pulsed laser deposition technique and their characterization

    Energy Technology Data Exchange (ETDEWEB)

    Drmosh, Qasem A. [Department of Mechanical Engineering, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Rao, Saleem G.; Yamani, Zain H. [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia); Gondal, Mohammed A., E-mail: magondal@kfupm.edu.sa [Laser Research Group, Department of Physics, Center of Excellence in Nanotechnology, King Fahd University of Petroleum and Minerals, Dhahran 31261 (Saudi Arabia)

    2013-04-01

    We report structural and optical properties of Cu doped ZnO (ZnO:Cu) thin films deposited on glass substrate at room temperature by pulsed laser deposition (PLD) method without pre and post annealing contrary to all previous reports. For preparation of (ZnO:Cu) composites pure Zn and Cu targets in special geometrical arrangements were exposed to 248 nm radiations generated by KrF exciter laser. The laser energy was 200 mJ with 10 Hz frequency and 20 ns pulse width. The effect of Cu concentration on crystal structure, morphology, and optical properties were investigated by XRD, FESEM and photoluminescence spectrometer respectively. A systematic shift in ZnO (0 0 2) peak with Cu concentration observed in XRD spectra demonstrated that Cu ion has been incorporated in ZnO lattice. Uniform film with narrow size range grains were observed in FESEM images. The photoluminescence (PL) spectra measured at room temperature revealed a systematic red shift in ZnO emission peak and decrease in the band gap with the increase in Cu concentration. These results entail that PLD technique can be realized to deposit high quality crystalline ZnO and ZnO:Cu thin films without pre and post heat treatment which is normally practiced worldwide for such structures.

  15. Ferroelectric Thin Film Development

    Science.gov (United States)

    2003-12-10

    less. The film temper- ature is monitored by thermocouple sensors. Process gases pass through the chamber during the process. An advantage of RTP is the...semiconductor InSe ,” J. Appl. Phys., vol. 86, pp. 5687–5691, November 1999. 37. R. Mollers and R. Memming Ber. Bunsenges. Phys. Chem., vol. 76, 1972. 38. M

  16. Investigation of defects in ultra-thin Al{sub 2}O{sub 3} films deposited on pure copper by the atomic layer deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Chang, M.L.; Wang, L.C. [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, No. 100, Wenhwa Road, Seatwen, Taichung 40724, Taiwan (China)

    2015-12-30

    Graphical abstract: Some residual OH ligands originating from incomplete reaction between TMA and surface species of OH* during ALD process induce the defects in deposited Al{sub 2}O{sub 3} films. Three possible types of defects are suggested. The analytic results indicate the defects are Type-I and/or Type-II but do not directly expose the substrate, like pinholes (Type-III). - Highlights: • Oxidation trials were conducted to investigate the defects in ultra-thin Al{sub 2}O{sub 3} films deposited ALD technique on pure copper. • The residual OH ligands in the deposited Al{sub 2}O{sub 3} films induce looser micro-structure which has worse oxidation resistance. • Superficial contamination particles on substrate surface are confirmed to be one of nucleation sites of the defects. - Abstract: Al{sub 2}O{sub 3} films with various thicknesses were deposited by the atomic layer deposition (ALD) technique on pure copper at temperatures of 100–200 °C. Oxidation trials were conducted in air at 200 °C to investigate the defects in these films. The analytic results show that the defects have a looser micro-structure compared to their surroundings, but do not directly expose the substrate, like pinholes. The film's crystallinity, mechanical properties and oxidation resistance could also be affected by these defects. Superficial contamination particles on the substrate surface are confirmed to be nucleation sites of the defects. A model for the mechanism of defect formation is proposed in this study.

  17. Workshop on thin film thermal conductivity measurements

    Science.gov (United States)

    Feldman, Albert; Balzaretti, Naira M.; Guenther, Arthur H.

    1998-04-01

    On a subject of considerable import to the laser-induced damage community, a two day workshop on the topic, Thin Film Thermal Conductivity Measurement was held as part of the 13th Symposium on Thermophysical Properties at the University of Colorado in Boulder CO, June 25 and 26, 1997. The Workshop consisted of 4 sessions of 17 oral presentations and two discussion sessions. Two related subjects of interest were covered; 1) methods and problems associated with measuring thermal conductivity ((kappa) ) of thin films, and 2) measuring and (kappa) of chemical vapor deposited (CVD) diamond. On the subject of thin film (kappa) measurement, several recently developed imaginative techniques were reviewed. However, several authors disagreed on how much (kappa) in a film differs from (kappa) in a bulk material of the same nominal composition. A subject of controversy was the definition of an interface. In the first discussion session, several questions were addressed, a principal one being, how do we know that the values of (kappa) we obtain are correct and is there a role for standards in thin film (kappa) measurement. The second discussion session was devoted to a round-robin interlaboratory comparison of (kappa) measurements on a set of CVD diamond specimens and several other specimens of lower thermal conductivity. Large interlaboratory differences obtained in an earlier round robin had been attributed to specimen inhomogeneity. Unfortunately, large differences were also observed in the second round robin even though the specimens were more homogenous. There was good consistency among the DC measurements, however, the AC measurements showed much greater variability. There was positive feedback from most of the attenders regarding the Workshop with nearly all respondents recommending another Workshop in three or fewer years. There was general recognition that thin film thermal conductivity measurements are important for predicting the resistance of optical coating

  18. Thin film cadmium telluride solar cells

    Science.gov (United States)

    Chu, T. L.; Chu, Shirley S.; Ang, S. T.; Mantravadi, M. K.

    1987-08-01

    Thin-film p-CdTe/CdS/SnO2:F/glass solar cells of the inverted configuration were prepared by the deposition of p-type CdTe films onto CdS/SnO2:F/glass substrates using CVD or close-spaced sublimation (CSS) techniques based on the procedures of Chu et al. (1983) and Nicholl (1963), respectively. The deposition rates of p-CdTe films deposited by CSS were higher than those deposited by the CVD technique (4-5 min were sufficient), and the efficiencies higher than 10 percent were obtained. However, the resistivity of films prepared by CSS was not as readily controlled as that of the CVD films. The simplest technique to reduce the resistivity of the CSS p-CdTe films was to incorporate a dopant, such as As or Sb, into the reaction mixture during the preparation of the source material. The films with resistivities in the range of 500-1000 ohm cm were deposited in this manner.

  19. Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

    Science.gov (United States)

    Huitema, L.; Cernea, M.; Crunteanu, A.; Trupina, L.; Nedelcu, L.; Banciu, M. G.; Ghalem, A.; Rammal, M.; Madrangeas, V.; Passerieux, D.; Dutheil, P.; Dumas-Bouchiat, F.; Marchet, P.; Champeaux, C.

    2016-04-01

    We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO3-0.08BaTiO3 (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20 V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band.

  20. Physical Vapor Deposition of Thin Films

    Science.gov (United States)

    Mahan, John E.

    2000-01-01

    A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

  1. Novel photon management for thin-film photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Menon, Rajesh [Univ. of Utah, Salt Lake City, UT (United States)

    2016-11-11

    The objective of this project is to enable commercially viable thin-film photovoltaics whose efficiencies are increased by over 10% using a novel optical spectral-separation technique. A thin planar diffractive optic is proposed that efficiently separates the solar spectrum and assigns these bands to optimal thin-film sub-cells. An integrated device that is comprised of the optical element, an array of sub-cells and associated packaging is proposed.

  2. Thin-Film Metamaterials called Sculptured Thin Films

    CERN Document Server

    Lakhtakia, Akhlesh

    2010-01-01

    Morphology and performance are conjointed attributes of metamaterials, of which sculptured thin films (STFs) are examples. STFs are assemblies of nanowires that can be fabricated from many different materials, typically via physical vapor deposition onto rotating substrates. The curvilinear--nanowire morphology of STFs is determined by the substrate motions during fabrication. The optical properties, especially, can be tailored by varying the morphology of STFs. In many cases prototype devices have been fabricated for various optical, thermal, chemical, and biological applications.

  3. RETRACTED: Ammonia-free method for synthesis of CdS nanocrystalline thin films through chemical bath deposition technique

    Science.gov (United States)

    Karimi, M.; Rabiee, M.; Moztarzadeh, F.; Bodaghi, M.; Tahriri, M.

    2009-11-01

    This article has been retracted: please see Elsevier Policy on Article Withdrawal ( http://www.elsevier.com/locate/withdrawalpolicy). This article has been retracted at the request of the Editor-in-Chief of Solid State Communications as the authors have plagiarized part of a paper that has also appeared in Current Applied Physics: Controlled synthesis, characterization and optical properties of CdS nanocrystalline thin films via chemical bath deposition (CBD) route Meysam Karimi, Mohammad Rabiee, Fathollah Moztarzadeh, Mohammadreza Tahriri and Masoud Bodaghi; Curr. Appl. Phys., 9 (2009) 1263-1268, doi: 10.1016/j.cap.2009.02.006. One of the conditions of submission of a paper for publication is that authors declare explicitly that their work is original and has not appeared in a publication elsewhere. Re-use of any data should be appropriately cited. As such this article represents a severe abuse of the scientific publishing system. The scientific community takes a very strong view on this matter and apologies are offered to readers of the journal that this was not detected during the submission process.

  4. Selective inorganic thin films

    Energy Technology Data Exchange (ETDEWEB)

    Phillips, M.L.F.; Pohl, P.I.; Brinker, C.J. [Sandia National Labs., Albuquerque, NM (United States)

    1997-04-01

    Separating light gases using membranes is a technology area for which there exists opportunities for significant energy savings. Examples of industrial needs for gas separation include hydrogen recovery, natural gas purification, and dehydration. A membrane capable of separating H{sub 2} from other gases at high temperatures could recover hydrogen from refinery waste streams, and facilitate catalytic dehydrogenation and the water gas shift (CO + H{sub 2}O {yields} H{sub 2} + CO{sub 2}) reaction. Natural gas purification requires separating CH{sub 4} from mixtures with CO{sub 2}, H{sub 2}S, H{sub 2}O, and higher alkanes. A dehydrating membrane would remove water vapor from gas streams in which water is a byproduct or a contaminant, such as refrigeration systems. Molecular sieve films offer the possibility of performing separations involving hydrogen, natural gas constituents, and water vapor at elevated temperatures with very high separation factors. It is in applications such as these that the authors expect inorganic molecular sieve membranes to compete most effectively with current gas separation technologies. Cryogenic separations are very energy intensive. Polymer membranes do not have the thermal stability appropriate for high temperature hydrogen recovery, and tend to swell in the presence of hydrocarbon natural gas constituents. The authors goal is to develop a family of microporous oxide films that offer permeability and selectivity exceeding those of polymer membranes, allowing gas membranes to compete with cryogenic and adsorption technologies for large-scale gas separation applications.

  5. Determination of magnetic properties of multilayer metallic thin films

    CERN Document Server

    Birlikseven, C

    2000-01-01

    and magnetization measurements were taken. In recent year, Giant Magnetoresistance Effect has been attracting an increasingly high interest. High sensitivity magnetic field detectors and high sensitivity read heads of magnetic media can be named as important applications of these films. In this work, magnetic and electrical properties of single layer and thin films were investigated. Multilayer thin films were supplied by Prof. Dr. A. Riza Koeymen from Texas University. Multilayer magnetic thin films are used especially for magnetic reading and magnetic writing. storing of large amount of information into small areas become possible with this technology. Single layer films were prepared using the electron beam evaporation technique. For the exact determination of film thicknesses, a careful calibration of the thicknesses was made. Magnetic properties of the multilayer films were studied using the magnetization, magnetoresistance measurements and ferromagnetic resonance technique. Besides, by fitting the exper...

  6. When are thin films of metals metallic?

    Science.gov (United States)

    Plummer, E. W.; Dowben, P. A.

    1993-04-01

    There is an increasing body of experimental information suggesting that very thin films of materials, normally considered to be metals, exhibit behavior characteristic of a nonmetal. In almost all cases, there is a nonmetal-to-metal transition as a function of film density or thickness, frequently accompanied by a structural transition. Amazingly, this behavior seems to occur for metal films on metal substrates, as well as for metals on semiconductors. The identification of this phenomena and the subsequent explanation has been slow in developing, due to the inability to directly measure the conductivity of a submonolayer film. This paper will discuss the evidence accumulated from variety of spectroscopic experimental techniques for three systems: a Mott-Hubbard transition, a Peierls-like distortion, and a Wilson transition.

  7. Enhanced performance of CdS/CdTe thin-film devices through temperature profiling techniques applied to close-spaced sublimation deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xiaonan Li; Sheldon, P.; Moutinho, H.; Matson, R. [National Renewable Energy Lab., Golden, CO (United States)

    1996-05-01

    The authors describe a methodology developed and applied to the close-spaced sublimation technique for thin-film CdTe deposition. The developed temperature profiles consisted of three discrete temperature segments, which the authors called the nucleation, plugging, and annealing temperatures. They have demonstrated that these temperature profiles can be used to grow large-grain material, plug pinholes, and improve CdS/CdTe photovoltaic device performance by about 15%. The improved material and device properties have been obtained while maintaining deposition temperatures compatible with commercially available substrates. This temperature profiling technique can be easily applied to a manufacturing environment by adjusting the temperature as a function of substrate position instead of time.

  8. Polycrystalline thin films : A review

    Energy Technology Data Exchange (ETDEWEB)

    Valvoda, V. [Charles Univ., Prague (Czech Republic). Faculty of Mathematics and Physics

    1996-09-01

    Polycrystalline thin films can be described in terms of grain morphology and in terms of their packing by the Thornton`s zone model as a function of temperature of deposition and as a function of energy of deposited atoms. Grain size and preferred grain orientation (texture) can be determined by X-ray diffraction (XRD) methods. A review of XRD analytical methods of texture analysis is given with main attention paid to simple empirical functions used for texture description and for structure analysis by joint texture refinement. To illustrate the methods of detailed structure analysis of thin polycrystalline films, examples of multilayers are used with the aim to show experiments and data evaluation to determine layer thickness, periodicity, interface roughness, lattice spacing, strain and the size of diffraction coherent volumes. The methods of low angle and high angle XRD are described and discussed with respect to their complementary information content.

  9. Thin films of soft matter

    CERN Document Server

    Kalliadasis, Serafim

    2007-01-01

    A detailed overview and comprehensive analysis of the main theoretical and experimental advances on free surface thin film and jet flows of soft matter is given. At the theoretical front the book outlines the basic equations and boundary conditions and the derivation of low-dimensional models for the evolution of the free surface. Such models include long-wave expansions and equations of the boundary layer type and are analyzed via linear stability analysis, weakly nonlinear theories and strongly nonlinear analysis including construction of stationary periodic and solitary wave and similarity solutions. At the experimental front a variety of very recent experimental developments is outlined and the link between theory and experiments is illustrated. Such experiments include spreading drops and bubbles, imbibitions, singularity formation at interfaces and experimental characterization of thin films using atomic force microscopy, ellipsometry and contact angle measurements and analysis of patterns using Minkows...

  10. Thin-film organic photonics molecular layer deposition and applications

    CERN Document Server

    Yoshimura, Tetsuzo

    2011-01-01

    Among the many atomic/molecular assembling techniques used to develop artificial materials, molecular layer deposition (MLD) continues to receive special attention as the next-generation growth technique for organic thin-film materials used in photonics and electronics. Thin-Film Organic Photonics: Molecular Layer Deposition and Applications describes how photonic/electronic properties of thin films can be improved through MLD, which enables precise control of atomic and molecular arrangements to construct a wire network that achieves ""three-dimensional growth"". MLD facilitates dot-by-dot--o

  11. Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)-8-hydroxy-5-nitrosoquinolate nano-sized thin films: characterization and factors optimization.

    Science.gov (United States)

    Haggag, Sawsan M S; Farag, A A M; Abdel Refea, M

    2013-02-01

    Nano Al(III)-8-hydroxy-5-nitrosoquinolate [Al(III)-(HNOQ)(3)] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27-71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current-voltage (I-V) characteristics of [Al(III)-(HNOQ)(3)]/p-Si heterojunction was measured at room temperature. The forward and reverse I-V characteristics were analyzed. The calculated zero-bias barrier height (Φ(b)) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (N(ss)) was obtained.

  12. Crystal and electronic structure study of AgAu and AgCu bimetallic alloy thin films by X-ray techniques

    Energy Technology Data Exchange (ETDEWEB)

    Ozkendir, O. Murat, E-mail: ozkendir@gmail.com [Mersin University, Faculty of Technology, Energy Systems Engineering, Tarsus (Turkey); Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Cengiz, E. [Karadeniz Technical University, Faculty of Science, Department of Physics, Trabzon (Turkey); Yalaz, E. [Mersin University, Institute of Natural Science, Department of Nanotechnology and Advanced Materials, Mersin (Turkey); Söğüt, Ö.; Ayas, D.H. [Kahramanmaraş Sütçü İmam Üniversitesi, Faculty of Science and Letters, Department of Physics, Kahramanmaraş (Turkey); Thammajak, B. Nirawat [Synchrotron Light Research Institute (Public Organisation), 111 University Avenue, T. Suranaree, A. Muang, Nakhon Ratchasima 30000 (Thailand)

    2016-05-15

    Highlights: • Crystal and electronic properties of bimetallic AgCu and AgAu alloy thin films were studied. • Both AgCu and AgAu bimetallic samples were determined to have cubic crystal geometry. • Strong influence of Cu and Au atoms on the electronic structure of the Ag atoms were determined. - Abstract: Crystal and electronic structure properties of bimetallic AgAu and AgCu alloy thin films were investigated by X-ray spectroscopic techniques. The aim of this study is to probe the influence of Au or Cu atoms on the electronic behaviors of Ag ions in bimetallic alloy materials that yields different crystal properties. To identify the mechanisms causing crystal phase transitions, study were supported by the collected EXAFS (Extended X-ray Absorption Fine Structure) data. Crystal structures of both Cu and Au doped bimetallic Ag samples were determined mainly in cubic geometry with “Fm3m” space group. Through the Ag–Au and Ag–Cu molecular interactions during bimetallic alloy formations, highly overlapped electronic levels that supports large molecular band formations were observed with different ionization states. Besides, traces of the d–d interactions in Au rich samples were determined as the main interplay in the broad molecular bond formations. The exact atomic locations and types in the samples were determined by EXAFS studies and supported by the performed calculations with FEFF scientific code.

  13. Successive ion layer adsorption and reaction (SILAR) technique synthesis of Al(III)-8-hydroxy-5-nitrosoquinolate nano-sized thin films: Characterization and factors optimization

    Science.gov (United States)

    Haggag, Sawsan M. S.; Farag, A. A. M.; Abdel Refea, M.

    2013-02-01

    Nano Al(III)-8-hydroxy-5-nitrosoquinolate [Al(III)-(HNOQ)3] thin films were synthesized by the rapid, direct, simple and efficient successive ion layer adsorption and reaction (SILAR) technique. Thin film formation optimized factors were evaluated. Stoichiometry and structure were confirmed by elemental analysis and FT-IR. The particle size (27-71 nm) was determined using scanning electron microscope (SEM). Thermal stability and thermal parameters were determined by thermal gravimetric analysis (TGA). Optical properties were investigated using spectrophotometric measurements of transmittance and reflectance at normal incidence. Refractive index, n, and absorption index, k, were determined. Spectral behavior of the absorption coefficient in the intrinsic absorption region revealed a direct allowed transition with 2.45 eV band gap. The current-voltage (I-V) characteristics of [Al(III)-(HNOQ)3]/p-Si heterojunction was measured at room temperature. The forward and reverse I-V characteristics were analyzed. The calculated zero-bias barrier height (Φb) and ideality factor (n) showed strong bias dependence. Energy distribution of interface states (Nss) was obtained.

  14. Effect of Surface Passivation on Electrical Properties of Pd-F:SnO2 Thin Films Prepared by Spray Pyrolysis Technique

    Directory of Open Access Journals (Sweden)

    Patrick Mwathe

    2014-11-01

    Full Text Available Pd-F:SnO2 thin films have been prepared by spray pyrolysis technique. Optimization has been done by doping SnO2 with palladium at varying levels of concentration and then recording sheet resistance. The sheet resistivity has been observed to decrease gradually as at% Pd concentration is increased; an optimum sheet resistivity value of 2.71 × 10−2 Ω cm has been recorded. The decrease in sheet resistivity has been attributed to presence of Pd ions which contribute in increment of charge carrier density. Using the optimum value of at% Pd doping, the same procedure has been repeated to study the effect of fluorine on Pd:SnO2; an optimum value of 1.64 × 10−4 Ω cm sheet resistivity has been recorded. This decrease has been attributed to substitution of O− with those of fluorine hence improving charge carrier density. The effect of passivation has been studied by comparing as prepared, annealed and passivated Pd-F:SnO2 thin films. Annealing has been observed to decrease the sheet resistivity to 1.21 × 10−4 Ω cm, while passivation has the effect of increasing the sheet resistivity to 1.53 × 10−4 Ω cm which is attributed to effects resulting from annealing the samples in nitrogen gas atmosphere.

  15. Photoconductivity of thin organic films

    Science.gov (United States)

    Tkachenko, Nikolai V.; Chukharev, Vladimir; Kaplas, Petra; Tolkki, Antti; Efimov, Alexander; Haring, Kimmo; Viheriälä, Jukka; Niemi, Tapio; Lemmetyinen, Helge

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 μm), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene ( PHT), fullerene ( C60), pyrelene tetracarboxylic diimide ( PTCDI) and copper phthalocyanine ( CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C60 and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 × 10 3 Ω m and 3 × 10 4 Ω m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 × 10 8 Ω m in dark to 3.1 × 10 6 Ω m under the light.

  16. Photoconductivity of thin organic films

    Energy Technology Data Exchange (ETDEWEB)

    Tkachenko, Nikolai V. [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Chukharev, Vladimir, E-mail: Vladimir.Chukharev@tut.fi [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Kaplas, Petra; Tolkki, Antti; Efimov, Alexander [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland); Haring, Kimmo; Viheriaelae, Jukka; Niemi, Tapio [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland); Lemmetyinen, Helge [Department of Chemistry and Bioengineering, Tampere University of Technology, P.O. Box 541, FIN-33101 Tampere (Finland)

    2010-04-01

    Thin organic films were deposited on silicon oxide surfaces with golden interdigitated electrodes (interelectrode gap was 2 {mu}m), and the film resistivities were measured in dark and under white light illumination. The compounds selected for the measurements include molecules widely used in solar cell applications, such as polythiophene (PHT), fullerene (C{sub 60}), pyrelene tetracarboxylic diimide (PTCDI) and copper phthalocyanine (CuPc), as well as molecules potentially interesting for photovoltaic applications, e.g. porphyrin-fullerene dyads. The films were deposited using thermal evaporation (e.g. for C{sub 60} and CuPc films), spin coating for PHT, and Langmuir-Schaeffer for the layer-by-layer deposition of porphyrin-fullerene dyads. The most conducting materials in the series are films of PHT and CuPc with resistivities 1.2 x 10{sup 3} {Omega} m and 3 x 10{sup 4} {Omega} m, respectively. Under light illumination resistivity of all films decreases, with the strongest light effect observed for PTCDI, for which resistivity decreases by 100 times, from 3.2 x 10{sup 8} {Omega} m in dark to 3.1 x 10{sup 6} {Omega} m under the light.

  17. Synthesis, structure, vapour pressure and deposition of ZnO thin film by plasma assisted MOCVD technique using a novel precursor bis[(pentylnitrilomethylidine) (pentylnitrilomethylidine-μ-phenalato)]dizinc(II)

    Science.gov (United States)

    Chandrakala, C.; Sravanthi, P.; Raj Bharath, S.; Arockiasamy, S.; George Johnson, M.; Nagaraja, K. S.; Jeyaraj, B.

    2017-02-01

    A novel binuclear zinc schiff's base complex bis[(pentylnitrilomethylidine)(pentylnitrilomethylidine-μ-phenalato)]dizinc(II) (hereafter referred as ZSP) was prepared and used as a precursor for the deposition of ZnO thin film by MOCVD. The dynamic TG run of ZSP showed sufficient volatility and good thermal stability. The temperature dependence of vapour pressure measured by transpiration technique yielded a value of 55.8 ± 2.3 kJ mol-1 for the enthalpy of sublimation (ΔH°sub) in the temperature range of 423-503 K. The crystal structure of ZSP was solved by single crystal XRD which exhibits triclinic crystal system with the space group of Pī. The molecular mass of ZSP was determined by mass spectrometry which yielded the m/z value of 891 and 445 Da corresponding to its dimeric as well as monomeric form. The complex ZSP was further characterized by FT-IR and NMR. The demonstration of ZnO thin film deposition was carried out by using plasma assisted MOCVD. The thin film XRD confirmed the highly oriented (002) ZnO thin films on Si(100) substrate. The uniformity and composition of the thin film were analyzed by SEM/EDX. The band gap of ZnO thin film measurement indicated the blue shift with the value of 3.79 eV.

  18. Mechanism and characters of thin film lubrication at nanometer scale

    Institute of Scientific and Technical Information of China (English)

    雒建斌; 温诗铸

    1996-01-01

    Thin film lubrication is a transition region between elastohydrodynamic lubrication and boundary lubrication, A technique of relative optical interference intensity with the resolution of 0.5 nm in the vertical direction and 1.5 nm in the horizontal direction is used in a pure rolling process to measure the film thickness with different lubricants, speeds, loads and substrate surface energy. Experimental data show that the characteristics of thin film lubrication are different from those of elastohydrodynamic lubrication and boundary lubrication. As the rolling speed decreases, a critical film thickness can be found to distinguish thin film lubrication from elastohydrodynamic lubrication. Such thickness is related to the substrate surface energy, atmospheric viscosity of lubricant, etc. A physical model of thin film lubrication with the fluid layer, the ordered liquid layer and the adsorbed layer is proposed and the functions of these different layers are discussed.

  19. A versatile platform for magnetostriction measurements in thin films

    Science.gov (United States)

    Pernpeintner, M.; Holländer, R. B.; Seitner, M. J.; Weig, E. M.; Gross, R.; Goennenwein, S. T. B.; Huebl, H.

    2016-03-01

    We present a versatile nanomechanical sensing platform for the investigation of magnetostriction in thin films. It is based on a doubly clamped silicon nitride nanobeam resonator covered with a thin magnetostrictive film. Changing the magnetization direction within the film plane by an applied magnetic field generates a magnetoelastic stress and thus changes the resonance frequency of the nanobeam. A measurement of the resulting resonance frequency shift, e.g., by optical interferometry, allows to quantitatively determine the magnetostriction constants of the thin film. In a proof-of-principle experiment, we determine the magnetostriction constants of a 10 nm thick polycrystalline cobalt film, showing very good agreement with literature values. The presented technique aims, in particular, for the precise measurement of magnetostriction in a variety of (conducting and insulating) thin films, which can be deposited by, e.g., electron beam deposition, thermal evaporation, or sputtering.

  20. Microstructural and mechanical characteristics of Ni–Cr thin films

    Energy Technology Data Exchange (ETDEWEB)

    Petley, Vijay [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India); Sathishkumar, S.; Thulasi Raman, K.H.; Rao, G.Mohan [Department of Instrumentation and Applied Physics, IISc, Bangalore 12 (India); Chandrasekhar, U. [Gas Turbine Research Establishment, DRDO, Bangalore 93 (India)

    2015-06-15

    Highlights: • Ni–Cr thin films of varied composition deposited by DC magnetron co-sputtering. • Thin film with Ni–Cr: 80–20 at% composition exhibits most distinct behavior. • The films were tensile tested and exhibited no cracking till the substrate yielding. - Abstract: Ni–Cr alloy thin films have been deposited using magnetron co-sputtering technique at room temperature. Crystal structure was evaluated using GIXRD. Ni–Cr solid solution upto 40 at% of Cr exhibited fcc solid solution of Cr in Ni and beyond that it exhibited bcc solid solution of Ni in Cr. X-ray diffraction analysis shows formation of (1 1 1) fiber texture in fcc and (2 2 0) fiber texture in bcc Ni–Cr thin films. Electron microscopy in both in-plane and transverse direction of the film surface revealed the presence of columnar microstructure for films having Cr upto 40 at%. Mechanical properties of the films are evaluated using nanoindentation. The modulus values increased with increase of Cr at% till the film is fcc. With further increase in Cr at% the modulus values decreased. Ni–Cr film with 20 at% Ni exhibits reduction in modulus and is correlated to the poor crystallization of the film as reflected in XRD analysis. The Ni–Cr thin film with 80 at% Ni and 20 at% Cr exhibited the most distinct columnar structure with highest electrical resistivity, indentation hardness and elastic modulus.

  1. An overview of thin film nitinol endovascular devices.

    Science.gov (United States)

    Shayan, Mahdis; Chun, Youngjae

    2015-07-01

    Thin film nitinol has unique mechanical properties (e.g., superelasticity), excellent biocompatibility, and ultra-smooth surface, as well as shape memory behavior. All these features along with its low-profile physical dimension (i.e., a few micrometers thick) make this material an ideal candidate in developing low-profile medical devices (e.g., endovascular devices). Thin film nitinol-based devices can be collapsed and inserted in remarkably smaller diameter catheters for a wide range of catheter-based procedures; therefore, it can be easily delivered through highly tortuous or narrow vascular system. A high-quality thin film nitinol can be fabricated by vacuum sputter deposition technique. Micromachining techniques were used to create micro patterns on the thin film nitinol to provide fenestrations for nutrition and oxygen transport and to increase the device's flexibility for the devices used as thin film nitinol covered stent. In addition, a new surface treatment method has been developed for improving the hemocompatibility of thin film nitinol when it is used as a graft material in endovascular devices. Both in vitro and in vivo test data demonstrated a superior hemocompatibility of the thin film nitinol when compared with commercially available endovascular graft materials such as ePTFE or Dacron polyester. Promising features like these have motivated the development of thin film nitinol as a novel biomaterial for creating endovascular devices such as stent grafts, neurovascular flow diverters, and heart valves. This review focuses on thin film nitinol fabrication processes, mechanical and biological properties of the material, as well as current and potential thin film nitinol medical applications.

  2. Fabrication of Cu2SnS3 thin films by ethanol-ammonium solution process by doctor-blade technique

    Science.gov (United States)

    Wang, Yaguang; Li, Jianmin; Xue, Cong; Zhang, Yan; Jiang, Guoshun; Liu, Weifeng; Zhu, Changfei

    2017-06-01

    In the present study, a low-cost and simple method is applied to fabricate Cu2SnS3 (CTS) thin films. Namely CTS thin films are prepared by a doctor-blade method with a slurry dissolving the Cu2O and SnS powders obtained from CBD reaction solution into ethanol-ammonium solvents. Series of characterization methods including XRD, Raman spectra, SEM and UV-Vis analyses are introduced to investigate the phase structure, morphology and optical properties of CTS thin films. As a result, monoclinic CTS films have been obtained with the disappearance of binary phases CuS and SnS2 while increasing the annealing temperature and time, high quality monoclinic CTS thin films consisting of compact and large grains have been successfully prepared by this ethanol-ammonium method. Moreover, the secondary phase Cu2Sn3S7 is also observed during the annealing process. In addition, the post-annealed CTS film with a band-gap about 0.89 eV shows excellent absorbance between 400 and 1200 nm, which is proper for the bottom layer in multi-junction thin film solar cells. [Figure not available: see fulltext.

  3. Carbon thin films deposited by the magnetron sputtering technique using cobalt, copper and nickel as buffer-layers; Filmes finos de carbono depositados por meio da tecnica de magnetron sputtering usando cobalto, cobre e niquel como buffer-layers

    Energy Technology Data Exchange (ETDEWEB)

    Costa e Silva, Danilo Lopes

    2015-11-01

    In this work, carbon thin films were produced by the magnetron sputtering technique using single crystal substrates of alumina c-plane (0001) and Si (111) and Si (100) substrates, employing Co, Ni and Cu as intermediate films (buffer-layers). The depositions were conducted in three stages, first with cobalt buffer-layers where only after the production of a large number of samples, the depositions using cooper buffer-layers were carried out on Si substrates. Then, depositions were performed with nickel buffer layers using single-crystal alumina substrates. The crystallinity of the carbon films was evaluated by using the technique of Raman spectroscopy and, then, by X-ray diffraction (XRD). The morphological characterization of the films was performed by scanning electron microscopy (SEM and FEG-SEM) and high-resolution transmission electron microscopy (HRTEM). The XRD peaks related to the carbon films were observed only in the results of the samples with cobalt and nickel buffer-layers. The Raman spectroscopy showed that the carbon films with the best degree of crystallinity were the ones produced with Si (111) substrates, for the Cu buffers, and sapphire substrates for the Ni and Co buffers, where the latter resulted in a sample with the best crystallinity of all the ones produced in this work. It was observed that the cobalt has low recovering over the alumina substrates when compared to the nickel. Sorption tests of Ce ions by the carbon films were conducted in two samples and it was observed that the sorption did not occur probably because of the low crystallinity of the carbon films in both samples. (author)

  4. Thin film module development

    Science.gov (United States)

    Jester, T.

    1985-01-01

    The design of ARCO Solar, Inc.'s Genesis G100 photovoltaic module was driven by several criteria, including environmental stability (both electrical and mechanical), consumer aesthetics, low materials costs, and manufacturing ease. The module circuitry is designed as a 12 volt battery charger, using monolithic patterning techniques on a glass superstrate. This patterning and interconnect method proves amenable to high volume, low cost production throughput, and the use of glass serves the dual role of handling ease and availability. The mechanical design of the module centers on environmental stability. Packaging of the glass superstrate circuit must provide good resistance to thermal and humidity exposure along with hi-pot insulation and hailstone impact resistance. The options considered are given. Ethylene vinyl acetate (EVA) is chosen as the pottant material for its excellent weatherability.

  5. Quantum-well-induced ferromagnetism in thin films

    DEFF Research Database (Denmark)

    Niklasson, A.M.N.; Mirbt, S.; Skriver, Hans Lomholt;

    1997-01-01

    We have used a first-principles Green's-function technique to investigate the magnetic properties of thin films of Rh, Pd, and Pt deposited on a fee Ag (001) substrate. We find that the magnetic moment of the film is periodically suppressed and enhanced as a function of film thickness....... The phenomenon is explained in terms of quantum-well states moving through the Fermi level with increasing film thickness....

  6. Nonlinear optical properties of Au/PVP composite thin films

    Institute of Scientific and Technical Information of China (English)

    Shen Hong; Cheng Bo-Lin; Lu Guo-Wei; Wang Wei-Tian; Guan Dong-Yi; Chen Zheng-Hao; Yang Guo-Zhen

    2005-01-01

    Colloidal Au and poly(vinylpyrrolidone) (PVP) composite thin films are fabricated by spin-coating method. Linear optical absorption measurements of the Au/PVP composite films indicate an absorption peak around 530 nm due to the surface plasmon resonance of gold nanoparticles. Nonlinear optical properties are studied using standard Z-scan technique, and experimental results show large optical nonlinearities of the Au/PVP composite films. A large value of films.

  7. Sensing of volatile organic compounds by copper phthalocyanine thin films

    Science.gov (United States)

    Ridhi, R.; Saini, G. S. S.; Tripathi, S. K.

    2017-02-01

    Thin films of copper phthalocyanine have been deposited by thermal evaporation technique. We have subsequently exposed these films to the vapours of methanol, ethanol and propanol. Optical absorption, infrared spectra and electrical conductivities of these films before and after exposure to chemical vapours have been recorded in order to study their sensing mechanisms towards organic vapours. These films exhibit maximum sensing response to methanol while low sensitivities of the films towards ethanol and propanol have been observed. The changes in sensitivities have been correlated with presence of carbon groups in the chemical vapours. The effect of different types of electrodes on response-recovery times of the thin film with organic vapours has been studied and compared. The electrodes gap distance affects the sensitivity as well as response-recovery time values of the thin films.

  8. Glass transition and thermal expansivity of polystyrene thin films

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, R. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Kanaya, T. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan)]. E-mail: kanaya@scl.kyoto-u.ac.jp; Miyazaki, T. [Nitto Denko Corporation, 1-1-2 Shimohozumi, Ibaraki, Osaka-fu 567-8680 (Japan); Nishida, K. [Institute for Chemical Research, Kyoto University, Uji, Kyoto-fu 611-0011 (Japan); Tsukushi, I. [Chiba Institute of Technology, Narashino, Chiba-ken 275-0023 (Japan); Shibata, K. [Japan Atomic Energy Research Institute, Tokai, Ibaraki-ken 319-1195 (Japan)

    2006-12-20

    We have studied glass transition temperature and thermal expansivity of polystyrene thin films supported on silicon substrate using X-ray reflectivity and inelastic neutron scattering techniques. In annealing experiments, we have found that the reported apparent negative expansivity of polymer thin films is caused by unrelaxed structure due to insufficient annealing. Using well-annealed films, we have evaluated glass transition temperature T {sub g} and thermal expansivity as a function of film thickness. The glass transition temperature decreases with film thickness and is constant below about 10 nm, suggesting the surface glass transition temperature of 355 K, which is lower than that in bulk. We have also found that the thermal expansivity in the glassy state decreases with film thickness even after annealing. The decrease has been attributed to hardening of harmonic force constant arising from chain confinement in a thin film. This idea has been confirmed in the inelastic neutron scattering measurements.

  9. Magnetic Thin Films of Inorganic Nanosheets

    Science.gov (United States)

    Yamamoto, Takashi; Namba, Hiroaki; Einaga, Yasuaki

    2012-02-01

    Molecule-based magnets have been fascinating materials because of the potential applications in information storage, electronic and spintronic devices. However, such applications would require arraying the active materials on a substrate or interfacing with other components. Here, we focus on fabricating multi-functional magnetic films using inorganic nanosheets as a building block. The thin films could be prepared by the modified Langmuir-Blodgett, LB, technique or the layer-by-layer, LbL, method, which are representative wet-processings for film preparation. As the magnetic LB film, we chose semiconductive titania nanosheets and magnetic Prussian Blue. Upon band gap excitation of titania nanosheets, electron injection into Prussian Blue was achieved with scavenging interlayer water molecules, leading to photoreduction to Prussian White. As the magnetic LbL film, we chose magnetic layered double hydroxide, LDH, nanosheets and non-magnetic smectite nanosheets. In powdered LDH, a coercivity increased with expanding the interlayer spacing. On the other hand, despite the larger interlayer spacing for the LbL film, a coercivity was less than that of the comparative powdered LDH. It is indicated LDH nanosheets are integrated in an anisotropic manner in the LbL films.

  10. Kinetics of electrochemically controlled surface reactions on bulk and thin film metals studied with Fourier transform impedance spectroscopy and surface plasmon resonance techniques

    Science.gov (United States)

    Assiongbon, Kankoe A.

    2005-07-01

    performed by studying potential galvanic corrosion effects that are susceptible to occur during planarization process in CMP technology. A combination of FT-EIS with potentiodynamic polarization and galvanic current measurements showed evidence of these effects when Cu (interconnected material in integrated circuits) and Ta (barrier material) were brought into electrical contact via abrasive-free polishing solutions. Quantitative analyses of kinetics of these effects were performed. Catalytic activity of a thin film Au (˜40 nm) toward methanol oxidation in alkaline medium for direct methanol fuel cell (DMFC) was carried out in this part of the work. A relatively unique combined technique of FT-EIS and SPR was used to perform this study. The FT-EIS data provided detailed kinetic parameters that characterize electro-oxidation of methanol. This led to a quantitative understanding of the mechanism of the probed surface reactions. At the same time, the SPR data provided with high accuracy the optical parameters and electronic characteristics of the thin film Au. The combined technique provided a complete understanding of the observed surface reactions, and showed consistency in data.

  11. Thin film calorimetry of polymer films

    Science.gov (United States)

    Zhang, Wenhua; Rafailovich, Miriam; Sokolov, Jonathan; Salamon, William

    2000-03-01

    Polystryene and polymethylmethacrylate films for thicknesses ranging from 50nm to 500nm using a direct calorimetric technique (Lai et al, App. Phys. Lett. 67, p9(1995)). Samples were deposited on Ni foils(2-2.5um) and placed in a high vacuum oven. Calibrated heat pulses were input to the polymer films by current pulses to the Ni substrate and temperature changes were determined from the change in Ni resistance. Pulses producing temperature jumps of 3-8K were used and signal averaging over pulses reduced noise levels enough to identify glass transitions down to 50nm. Molecular weight dependence of thick films Tg was used as a temperature calibration.

  12. Altering properties of cerium oxide thin films by Rh doping

    Energy Technology Data Exchange (ETDEWEB)

    Ševčíková, Klára, E-mail: klarak.sevcikova@seznam.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); NIMS Beamline Station at SPring-8, National Institute for Materials Science, Sayo, Hyogo 679-5148 (Japan); Nehasil, Václav, E-mail: nehasil@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Haviar, Stanislav, E-mail: stanislav.haviar@gmail.com [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); Matolín, Vladimír, E-mail: matolin@mbox.troja.mff.cuni.cz [Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University in Prague, V Holešovičkách 2, 180 00 Prague 8 (Czech Republic); and others

    2015-07-15

    Highlights: • Thin films of ceria doped by rhodium deposited by RF magnetron sputtering. • Concentration of rhodium has great impact on properties of Rh–CeO{sub x} thin films. • Intensive oxygen migration in films with low concentration of rhodium. • Oxygen migration suppressed in films with high amount of Rh dopants. - Abstract: Ceria containing highly dispersed ions of rhodium is a promising material for catalytic applications. The Rh–CeO{sub x} thin films with different concentrations of rhodium were deposited by RF magnetron sputtering and were studied by soft and hard X-ray photoelectron spectroscopies, Temperature programmed reaction and X-ray powder diffraction techniques. The sputtered films consist of rhodium–cerium mixed oxide where cerium exhibits a mixed valency of Ce{sup 4+} and Ce{sup 3+} and rhodium occurs in two oxidation states, Rh{sup 3+} and Rh{sup n+}. We show that the concentration of rhodium has a great influence on the chemical composition, structure and reducibility of the Rh–CeO{sub x} thin films. The films with low concentrations of rhodium are polycrystalline, while the films with higher amount of Rh dopants are amorphous. The morphology of the films strongly influences the mobility of oxygen in the material. Therefore, varying the concentration of rhodium in Rh–CeO{sub x} thin films leads to preparing materials with different properties.

  13. Pulse transient hot strip technique adapted for slab sample geometry to study anisotropic thermal transport properties of μm-thin crystalline films.

    Science.gov (United States)

    Ma, Y; Gustavsson, J S; Haglund, A; Gustavsson, M; Gustafsson, S E

    2014-04-01

    A new method based on the adaptation of the Pulse Transient Hot Strip technique to slab sample geometry has been developed for studying thermal conductivity and thermal diffusivity of anisotropic thin film materials (conductivity in the 0.01-100 W/mK range, deposited on thin substrates (i.e., wafers). Strength of this technique is that it provides a well-controlled thermal probing depth, making it possible to probe a predetermined depth of the sample layer and thereby avoiding the influence from material(s) deeper down in the sample. To verify the technique a series of measurements were conducted on a y-cut single crystal quartz wafer. A Hot Strip sensor (32-μm wide, 3.2-mm long) was deposited along two orthogonal crystallographic (x- and z-) directions and two independent pulse transients were recorded. Thereafter, the data was fitted to our theoretical model, and the anisotropic thermal transport properties were determined. Using a thermal probing depth of only 30 μm, we obtained a thermal conductivity along the perpendicular (parallel) direction to the z-, i.e., optic axis of 6.48 (11.4) W/mK, and a thermal diffusivity of 3.62 (6.52) mm(2)/s. This yields a volumetric specific heat of 1.79 MJ/mK. These values agree well with tabulated data on bulk crystalline quartz supporting the accuracy of the technique, and the obtained standard deviation of less than 2.7% demonstrates the precision of this new measurement technique.

  14. The novel chamber hardware design to improve the thin film deposition quality in both 12″ (300 mm and 18″ (450 mm wafers with the development of 3D full chamber modeling and experimental visual technique

    Directory of Open Access Journals (Sweden)

    M.-H. Liao

    2013-07-01

    Full Text Available The thin film deposition property and the process difference during the wafer size migration from 12″ (300 mm to 18″ (450 mm in the Chemical Vapor Deposition (CVD equipment is improved and reduced, respectively, when the chamber hardware is designed with the help of 3D full chamber modeling and 3D experimental visual technique developed in this work. The accuracy of 3D chamber simulation model is demonstrated with the experimental visual technique measurement. With the CVD chamber hardware design of placing the inlet position and optimizing the distance between the susceptor edge and the reactor wall, the better thin film deposition property and the larger process compatibility during the wafer size migration from 12″ (300 mm to 18″ (450 mm for the industry cost reduction can be achieved. Non-dimensional Nusselt parameter is also found to be the effective indicator to monitor the thin film deposition property.

  15. Fabrication of highly crystalline oxide thin films on plastics: Sol–gel transfer technique involving high temperature process

    Directory of Open Access Journals (Sweden)

    Hiromitsu Kozuka

    2016-09-01

    Full Text Available Si(100 substrates were coated with a polyimide (PI–polyvinylpyrrolidone (PVP mixture film, and an alkoxide-derived TiO2 gel film was deposited on it by spin-coating. The gel films were fired under various conditions with final annealing at 600–1000 °C. The PI–PVP layer was completely decomposed at such high temperatures while the TiO2 films survived on Si(100 substrates without any damages. When the final annealing temperature was raised, the crystalline phase changed from anatase to rutile, and the crystallite size and the refractive index of the films tended to increase. The TiO2 films thus fired on Si(100 substrates were transferred to polycarbonate (PC substrates by melting the surface of the plastic substrate either in a near-infrared image furnace or on a hot plate under a load. Cycles of deposition and firing were found to be effective in achieving successful transfer even for the films finally annealed at 1000 °C. X-ray photoelectron spectroscopic analyses on the film/Si(100 interface suggested that the residual carbon or carbides at the interface could be a possible factor, but not a necessary and decisive factor that allows the film transfer.

  16. Study of optoelectronic properties of thin film solar cell materials Cu2ZnSn(S,Se)4 using multiple correlative spatially-resolved spectroscopy techniques

    Science.gov (United States)

    Chen, Qiong

    Containing only earth abundant and environmental friendly elements, quaternary compounds Cu2ZnSnS4 (CZTS) and Cu2ZnSnSe 4 (CZTSe) are considered as promising absorber materials for thin film solar cells. The best record efficiency for this type of thin film solar cell is now 12.6%. As a promising photovoltaic (PV) material, the electrical and optical properties of CZTS(Se) have not been well studied. In this work, an effort has been made to understand the optoelectronic and structural properties, in particular the spatial variations, of CZTS(Se) materials and devices by correlating multiple spatially resolved characterization techniques with sub-micron resolution. Micro-Raman (micro-Raman) spectroscopy was used to analyze the chemistry compositions in CZTS(Se) film; Micro-Photoluminescence (micro-PL) was used to determine the band gap and possible defects. Micro-Laser-Beam-Induced-Current (micro-LBIC) was used to examine the photo-response of CZTS(Se) solar cell in different illumination conditions. Micro-reflectance was used to estimate the reflectance loss. And Micro-I-V measurement was used to compare important electrical parameters from CZTS(Se) solar cells with different device structure or absorber compositions. Scanning electron microscopy and atomic force microscopy were used to characterize the surface morphology. Successfully integrating and correlating these techniques was first demonstrated during the course of this work in our laboratory, and this level of integration and correlation has been rare in the field of PV research. This effort is significant not only for this particular project and also for a wide range of research topics. Applying this approach, in conjunction with high-temperature and high-excitation-power optical spectroscopy, we have been able to reveal the microscopic scale variations among samples and devices that appeared to be very similar from macroscopic material and device characterizations, and thus serve as a very powerful tool

  17. Structural, morphological, gas sensing and photocatalytic characterization of MoO3 and WO3 thin films prepared by the thermal vacuum evaporation technique

    Science.gov (United States)

    Arfaoui, A.; Touihri, S.; Mhamdi, A.; Labidi, A.; Manoubi, T.

    2015-12-01

    Thin films of molybdenum trioxide and tungsten trioxide were deposited on glass substrates using a simplified thermal evaporation under vacuum method monitored by heat treatment in flowing oxygen at 500 °C for 1 h. The structural and morphological properties of the films were investigated using X-ray diffraction, Raman spectroscopy, atomic force microscopy and scanning electron microscopy. The X-ray diffraction analysis shows that the films of MoO3 and WO3 were well crystallized in orthorhombic and monoclinic phase respectively with the crystallites preferentially oriented toward (2 0 0) direction parallel a-axis for both samples. In literature, we have shown in previous papers that structural and surface morphology of metal thin films play an important role in the gas detection mechanism. In this article, we have studied the response evolution of MoO3 and WO3 thin films sensors ethanol versus time, working temperature and the concentration of the ethanol. It was found that these films had high sensitivity to ethanol, which made them as a good candidate for the ethanol sensor. Finally, the photocatalytic activity of the samples was evaluated with respect to the degradation reaction of a wastewater containing methylene blue (MB) under UV-visible light irradiation. The molybdenum trioxide exhibits a higher degradation rate than the tungsten trioxide thin films under similar experimental conditions.

  18. Thin films for emerging applications v.16

    CERN Document Server

    Francombe, Maurice H

    1992-01-01

    Following in the long-standing tradition of excellence established by this serial, this volume provides a focused look at contemporary applications. High Tc superconducting thin films are discussed in terms of ion beam and sputtering deposition, vacuum evaporation, laser ablation, MOCVD, and other deposition processes in addition to their ultimate applications. Detailed treatment is also given to permanent magnet thin films, lateral diffusion and electromigration in metallic thin films, and fracture and cracking phenomena in thin films adhering to high-elongation substrates.

  19. Study of YBaCo{sub 4}O{sub 7+{delta}} thin films grown by sputtering technique on (1012)-oriented sapphire substrates

    Energy Technology Data Exchange (ETDEWEB)

    Montoya, J.F.; Izquierdo, J.L. [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Gomez, A. [Laboratorio de Caracterizacion de Materiales, Facultad de Minas, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Arnache, O.; Osorio, J. [Grupo de Estado Solido, Departamento de Fisica, Universidad de Antioquia, A.A. 1226 Medellin (Colombia); Marin, J.; Paucar, C. [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia); Moran, O., E-mail: omoranc@unal.edu.c [Laboratorio de Materiales Ceramicos y Vitreos, Departamento de Fisica, Universidad Nacional de Colombia, Sede Medellin, A.A. 568, Medellin (Colombia)

    2011-03-01

    We report the growth of thin films of the cobaltite YBaCo{sub 4}O{sub 7+{delta}} by means of the dc magnetron sputtering technique at high oxygen pressure onto r (1012) sapphire substrates. The films were characterized according to their structural, morphological, electrical, magnetic, and optical properties. An analysis of the X-ray diffraction pattern indicates that the films grown on r-sapphire substrates are single phase polycrystalline. Despite the high growth temperature (850 {sup o}C), no indication of interface reaction (formation of BaAlO{sub 4} or Y{sub 2}O{sub 3}) is detected. Measurements of resistivity as a function of temperature reveal a semiconductor-like character of the grown films. No indication of possible transitions is observed in the temperature range 50-300 K. The electronic transport mechanism seems to be dominated by Mott variable range hopping (VRH) conduction. Fitting the VRH model to the experimental data allows one to estimate the density of states of the material at the Fermi level N(E{sub F}). The resistivity measured in magnetic fields as strong as 5 T increases notably, and positive magnetoresistance values as high as {approx} 60% at 100 K are obtained. Magnetization measurements show well defined hysteresis loops at 300 K and 5 K. Nevertheless, calculated values of the magnetization have ended up being too small for the ferro- or ferrimagnetic states. Raman spectra, in turn, allow one to identify bands associated with vibrating modes of CoO{sub 4} and YO{sub 6} in tetrahedral and octahedral configurations, respectively. Additional bands which seem to stem from Co ions in octahedral configuration are also clearly identified. Measurements of transmittance and reflectance show two well defined energy gaps at 3.7 and 2.2 eV.

  20. Thin film fuel cell electrodes.

    Science.gov (United States)

    Asher, W. J.; Batzold, J. S.

    1972-01-01

    Earlier work shows that fuel cell electrodes prepared by sputtering thin films of platinum on porous vycor substrates avoid diffusion limitations even at high current densities. The presented study shows that the specific activity of sputtered platinum is not unusually high. Performance limitations are found to be controlled by physical processes, even at low loadings. Catalyst activity is strongly influenced by platinum sputtering parameters, which seemingly change the surface area of the catalyst layer. The use of porous nickel as a substrate shows that pore size of the substrate is an important parameter. It is noted that electrode performance increases with increasing loading for catalyst layers up to two microns thick, thus showing the physical properties of the sputtered layer to be different from platinum foil. Electrode performance is also sensitive to changing differential pressure across the electrode. The application of sputtered catalyst layers to fuel cell matrices for the purpose of obtaining thin total cells appears feasible.

  1. Thin film characterization by resonantly excited internal standing waves

    Energy Technology Data Exchange (ETDEWEB)

    Di Fonzio, S. [SINCROTRONE TRIESTE, Trieste (Italy)

    1996-09-01

    This contribution describes how a standing wave excited in a thin film can be used for the characterization of the properties of the film. By means of grazing incidence X-ray reflectometry one can deduce the total film thickness. On the other hand in making use of a strong resonance effect in the electric field intensity distribution inside a thin film on a bulk substrate one can learn more about the internal structure of the film. The profile of the internal standing wave is proven by diffraction experiments. The most appropriate non-destructive technique for the subsequent thin film characterization is angularly dependent X-ray fluorescence analysis. The existence of the resonance makes it a powerful tool for the detection of impurities and of ultra-thin maker layers, for which the position can be determined with very high precision (about 1% of the total film thickness). This latter aspect will be discussed here on samples which had a thin Ti marker layer at different positions in a carbon film. Due to the resonance enhancement it was still possible to perform these experiments with a standard laboratory x-ray tube and with standard laboratory tool for marker or impurity detection in thin films.

  2. Exotic thin films made from cobalt ferrite

    NARCIS (Netherlands)

    Lisfi, A.; Lisfi, A.; Williams, C.M.; Johnson, A.; Chang, P.; Corcoran, H.; Nguyen, L.T.; Lodder, J.C.; Morgan, W.; Soohoo, R.F.

    2005-01-01

    Epitaxial CoFe2O4 thin films have been grown by PLD on (100) MgO substrate. Two types of spin-reorientation have been observed in such films upon annealing or increasing the film-thickness. In the as-deposited layers and at low thickness the easy axis is confined to the normal to the film plane

  3. Deposit of thin films of nitrided amorphous carbon using the laser ablation technique; Deposito de peliculas delgadas de carbono amorfo nitrurado utilizando la tecnica de ablacion laser

    Energy Technology Data Exchange (ETDEWEB)

    Rebollo, P.B.; Escobar A, L.; Camps C, E. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, C.P. 52045 Salazar, Estado de Mexico (Mexico); Haro P, E.; Camacho L, M.A. [Departamento de Fisica, Universidad Autonoma Metropolitana Iztapalapa (Mexico); Muhl S, S. [Instituto de Investigacion en Materiales, UNAM (Mexico)

    2000-07-01

    It is reported the synthesis and characterization of thin films of amorphous carbon (a-C) nitrided, deposited by laser ablation in a nitrogen atmosphere at pressures which are from 4.5 x 10 {sup -4} Torr until 7.5 x 10 {sup -2} Torr. The structural properties of the films are studied by Raman spectroscopy obtaining similar spectra at the reported for carbon films type diamond. The study of behavior of the energy gap and the ratio nitrogen/carbon (N/C) in the films, shows that the energy gap is reduced when the nitrogen incorporation is increased. It is showed that the refraction index of the thin films diminish as nitrogen pressure is increased, indicating the formation of graphitic material. (Author)

  4. Optical properties of rubrene thin film prepared by thermal evaporation

    Institute of Scientific and Technical Information of China (English)

    陈亮; 邓金祥; 孔乐; 崔敏; 陈仁刚; 张紫佳

    2015-01-01

    Rubrene thin films are deposited on quartz substrates and silver nanoparticles (Ag NPs) films by the thermal evapo-ration technique. The optical properties of rubrene thin film are investigated in a spectral range of 190 nm–1600 nm. The analysis of the absorption coefficient (α) reveals direct allowed transition with a corresponding energy of 2.24 eV. The photoluminescence (PL) peak of the rubrene thin film is observed to be at 563 nm (2.21 eV). With the use of Ag NPs which are fabricated by radio-frequency (RF) magnetron sputtering on the quartz, the PL intensity is 8.5 times that of as-deposited rubrene thin film. It is attributed to the fact that the surface plasmon enhances the photoluminescence.

  5. High-throughput characterization of film thickness in thin film materials libraries by digital holographic microscopy.

    Science.gov (United States)

    Lai, Yiu Wai; Krause, Michael; Savan, Alan; Thienhaus, Sigurd; Koukourakis, Nektarios; Hofmann, Martin R; Ludwig, Alfred

    2011-10-01

    A high-throughput characterization technique based on digital holography for mapping film thickness in thin-film materials libraries was developed. Digital holographic microscopy is used for fully automatic measurements of the thickness of patterned films with nanometer resolution. The method has several significant advantages over conventional stylus profilometry: it is contactless and fast, substrate bending is compensated, and the experimental setup is simple. Patterned films prepared by different combinatorial thin-film approaches were characterized to investigate and demonstrate this method. The results show that this technique is valuable for the quick, reliable and high-throughput determination of the film thickness distribution in combinatorial materials research. Importantly, it can also be applied to thin films that have been structured by shadow masking.

  6. Thin film cadmium telluride photovoltaic cells

    Energy Technology Data Exchange (ETDEWEB)

    Compaan, A.; Bohn, R. (Toledo Univ., OH (United States))

    1992-04-01

    This report describes research to develop to vacuum-based growth techniques for CdTe thin-film solar cells: (1) laser-driven physical vapor deposition (LDPVD) and (2) radio-frequency (rf) sputtering. The LDPVD process was successfully used to deposit thin films of CdS, CdTe, and CdCl{sub 2}, as well as related alloys and doped semiconductor materials. The laser-driven deposition process readily permits the use of several target materials in the same vacuum chamber and, thus, complete solar cell structures were fabricated on SnO{sub 2}-coated glass using LDPVD. The rf sputtering process for film growth became operational, and progress was made in implementing it. Time was also devoted to enhancing or implementing a variety of film characterization systems and device testing facilities. A new system for transient spectroscopy on the ablation plume provided important new information on the physical mechanisms of LDPVD. The measurements show that, e.g., Cd is predominantly in the neutral atomic state in the plume but with a fraction that is highly excited internally ({ge} 6 eV), and that the typical neutral Cd translational kinetic energies perpendicular to the target are 20 eV and greater. 19 refs.

  7. Analysis on mechanism of thin film lubrication

    Institute of Scientific and Technical Information of China (English)

    ZHANG Chaohui; LUO Jianbin; HUANG Zhiqiang

    2005-01-01

    It is an important concern to explore the properties and principles of lubrication at nano or molecularscale. For a long time, measurement apparatus for filmthickness of thin film lubrication (TFL) at nano scale havebeen devised on the basis of superthin interferometry technique. Many experiments were carried out to study the lubrication principles of TFL by taking advantages of aforementioned techniques, in an attempt to unveil the mechanism of TFL. Comprehensive experiments were conducted to explore the distinctive characteristics of TFL. Results show that TFL is a distinctive lubrication state other than any known lubrication ones, and serves as a bridge between elastohydrodynamic lubrication (EHL) and boundary lubrication (BL). Two main influence factors of TFL are the solid surface effects and the molecular properties of the lubricant, whose combination effects result in alignment of liquid molecules near the solid surfaces and subsequently lubrication with ordered film emerged. Results of theoretical analysis considering microstructure are consistent with experimental outcomes, thus validating the proposed mechanism.

  8. Thin liquid films dewetting and polymer flow

    CERN Document Server

    Blossey, Ralf

    2012-01-01

    This book is a treatise on the thermodynamic and dynamic properties of thin liquid films at solid surfaces and, in particular, their rupture instabilities. For the quantitative study of these phenomena, polymer thin films haven proven to be an invaluable experimental model system.   What is it that makes thin film instabilities special and interesting, warranting a whole book? There are several answers to this. Firstly, thin polymeric films have an important range of applications, and with the increase in the number of technologies available to produce and to study them, this range is likely to expand. An understanding of their instabilities is therefore of practical relevance for the design of such films.   Secondly, thin liquid films are an interdisciplinary research topic. Interdisciplinary research is surely not an end to itself, but in this case it leads to a fairly heterogeneous community of theoretical and experimental physicists, engineers, physical chemists, mathematicians and others working on the...

  9. Scanned probe microscopy for thin film superconductor development

    Energy Technology Data Exchange (ETDEWEB)

    Moreland, J. [National Institute of Standards and Technology, Boulder, CO (United States)

    1996-12-31

    Scanned probe microscopy is a general term encompassing the science of imaging based on piezoelectric driven probes for measuring local changes in nanoscale properties of materials and devices. Techniques like scanning tunneling microscopy, atomic force microscopy, and scanning potentiometry are becoming common tools in the production and development labs in the semiconductor industry. The author presents several examples of applications specific to the development of high temperature superconducting thin films and thin-film devices.

  10. Optical properties of double layer thin films zinc oxide doping aluminum (ZnO/Al) were deposited on glass substrates by sol gel method spray coating technique

    Science.gov (United States)

    Permatasari, Anes; Sutanto, Heri; Marito Siagian, Sinta

    2017-01-01

    Thin films of double layer of ZnO/Al has succeeded in deposition on a glass substrate using sol-gel method and spray coating techniques. Variations of doping Al as much as 2%, 4%, 6% and 8%. ZnO precursor synthesized using zinc acetate dehydrate (Zn(COOCH3)2.2H2O), isopropanol ((CH3)2CHOH) and monoethanolamine (MEA) were stirred using a magnetic stirrer for 45 minutes. ZnO precursor get homogeneous and then added of aluminum nitrate nonahydrate predetermined doping concentration and stirred again for 15 minutes. Deposition solution is done by the spray on a glass substrate and then heated at a temperature of 450°C. A layer of ZnO/Al deposited over the ZnO to produce a thin layer of a double layer. Optical properties layer of ZnO/Al characterized using UV-Vis spectrophotometer. Based on data from UV-Vis absorbance was determined the value of the energy band gap. Pure and dopped layers has different energy due the Al dopping. For pure ZnO layer has energy band gap of 3.347 eV and decreased to 3.09 eV for ZnO layer with Al dopant.

  11. Homogenization studies for optical sensors based on sculptured thin films

    OpenAIRE

    Jamaian, Siti Suhana

    2013-01-01

    In this thesis we investigate theoretically various types of sculptured thin film (STF) envisioned as platforms for optical sensing. A STF consists of an array of parallel nanowires which can be grown on a substrate using vapour deposition techniques. Typically, each nanowire has a diameter in the range from ~ 10-300 nmwhile the film thickness is ~

  12. Production of BiPbSrCaCuO thin films on MgO and Ag/MgO substrates by electron beam deposition techniques

    CERN Document Server

    Varilci, A; Gorur, O; Celebi, S; Karaca, I

    2002-01-01

    Superconducting BiPbSrCaCuO thin films were prepared on MgO(001) and Ag/MgO substrates using an electron beam (e-beam) evaporation technique. The effects of annealing temperature and Ag diffusion on the crystalline structure and some superconducting properties, respectively, were investigated by X-ray diffraction, atomic force microscopy, and by measurements of the critical temperature and the critical current density. It was shown that an annealing of both types of films at 845 or 860 C resulted in the formation of mixed Bi-2223 and Bi-2212 phases with a high degree of preferential orientation with the c-axis perpendicular to the substrates. The slight increase of the critical temperature from 103 K to 105 K, the enhancement of the critical current density from 2 x 10 sup 3 to 6 x 10 sup 4 A/cm sup 2 , and the improved surface smoothness are due to a possible silver doping from the substrate. (Abstract Copyright [2002], Wiley Periodicals, Inc.)

  13. Fabrication of p-type CuO thin films using chemical bath deposition technique and their solar cell applications with Si nanowires

    Science.gov (United States)

    Akgul, Funda Aksoy; Akgul, Guvenc

    2017-02-01

    Recently, CuO has attracted much interest owing to its suitable material properties, inexpensive fabrication cost and potential applications for optoelectronic devices. In this study, CuO thin films were deposited on glass substrates using chemical bath deposition technique and post-deposition annealing effect on the properties of the prepared samples were investigated. p-n heterojunction solar cells were then constructed by coating of p-type CuO films onto the vertically well-aligned n-type Si nanowires synthesized through MACE method. Photovoltaic performance of the fabricated devices were determined with current-voltage (I-V) measurements under AM 1.5 G illumination. The optimal short-circuit current density, open-circuit voltage, fill factor and power conversion efficiency were found to be 3.2 mA/cm-2, 337 mV, 37.9 and 0.45%, respectively. The observed performance clearly indicates that the investigated device structure could be a promising candidate for high-performance low-cost new-generation photovoltaic diodes.

  14. Ellipsometric Studies on Silver Telluride Thin Films

    Directory of Open Access Journals (Sweden)

    M. Pandiaraman

    2011-01-01

    Full Text Available Silver telluride thin films of thickness between 45 nm and 145 nm were thermally evaporated on well cleaned glass substrates at high vacuum better than 10 – 5 mbar. Silver telluride thin films are polycrystalline with monoclinic structure was confirmed by X-ray diffractogram studies. AFM and SEM images of these films are also recorded. The phase ratio and amplitude ratio of these films were recorded in the wavelength range between 300 nm and 700 nm using spectroscopic ellipsometry and analysed to determine its optical band gap, refractive index, extinction coefficient, and dielectric functions. High absorption coefficient determined from the analysis of recorded spectra indicates the presence of direct band transition. The optical band gap of silver telluride thin films is thickness dependent and proportional to square of reciprocal of thickness. The dependence of optical band gap of silver telluride thin films on film thickness has been explained through quantum size effect.

  15. Synthesis of nanocrystalline Cu{sub 2}ZnSnS{sub 4} thin films grown by the spray-pyrolysis technique

    Energy Technology Data Exchange (ETDEWEB)

    Chandel, Tarun, E-mail: tarunchandel777@yahoo.com; Singh, Joginder; Rajaram, P. [School of Studies in Physics, Jiwaji University, Gwalior (MP), India-474011 (India)

    2015-08-28

    Spray pyrolysis was used to deposit Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films on soda lime glass substrates at 300 °C. Aqueous solutions of copper chloride, zinc chloride, stannous chloride and thiourea were mixed together to form the spray liquid. The sprayed films were annealed under vacuum at 350 °C, 400 °C and 450 °C. Structural and optical characterization was performed on the CZTS films using X-ray diffraction (XRD) and UV-VIS spectrophotometry. XRD results indicate that the films are single phase nanocrystalline CZTS. Optical studies show that the optical gap values are 1.44 eV for the as-grown film and 1.46 eV, 1.48 eV and 1.49 eV for the films annealed at 350 °C, 400 °C and 450 °C, respectively.

  16. Raman spectroscopy of thin films

    Science.gov (United States)

    Burgess, James Shaw

    Raman spectroscopy was used in conjunction with x-ray diffraction and x-ray photoelectron spectroscopy to elucidate structural and compositional information on a variety of samples. Raman was used on the unique La 2NiMnO6 mixed double perovskite which is a member of the LaMnO3 family of perovskites and has multiferroic properties. Raman was also used on nanodiamond films as well as some boron-doped carbon compounds. Finally, Raman was used to identify metal-dendrimer bonds that have previously been overlooked. Vibrational modes for La2NiMnO6 were ascribed by comparing spectra with that for LaMnO3 bulk and thin film spectra. The two most prominent modes were labeled as an asymmetric stretch (A g) centered around 535 cm-1 and a symmetric stretch (B g) centered around 678 cm. The heteroepitaxial quality of La2NiMnO 6 films on SrTiO3 (100) and LaAlO3 (100) substrates were examined using the Raman microscope by way of depth profile experiments and by varying the thickness of the films. It was found that thin films (10 nm) had much greater strain on the LaAlO3 substrate than on the SrTiO3 substrate by examining the shifts of the Ag and the Bg modes from their bulk positions. Changes in the unit cell owing to the presence of oxygen defects were also monitored using Raman spectroscopy. It was found that the Ag and Bg modes shifted between samples formed with different oxygen partial pressures. These shifts could be correlated to changes in the symmetry of the manganese centers due to oxygen defects. Raman spectroscopy was used to examine the structural and compositional characteristics of carbon materials. Nanocrystalline diamond coated cutting tools were examined using the Raman Microscope. Impact, abrasion, and depth profile experiments indicated that delamination was the primary cause of film failure in these systems. Boron doped material of interest as catalyst supports were also examined. Monitoring of the G-mode and intensities of the D- and G-modes indicated that

  17. Electrostatic thin film chemical and biological sensor

    Science.gov (United States)

    Prelas, Mark A.; Ghosh, Tushar K.; Tompson, Jr., Robert V.; Viswanath, Dabir; Loyalka, Sudarshan K.

    2010-01-19

    A chemical and biological agent sensor includes an electrostatic thin film supported by a substrate. The film includes an electrostatic charged surface to attract predetermined biological and chemical agents of interest. A charge collector associated with said electrostatic thin film collects charge associated with surface defects in the electrostatic film induced by the predetermined biological and chemical agents of interest. A preferred sensing system includes a charge based deep level transient spectroscopy system to read out charges from the film and match responses to data sets regarding the agents of interest. A method for sensing biological and chemical agents includes providing a thin sensing film having a predetermined electrostatic charge. The film is exposed to an environment suspected of containing the biological and chemical agents. Quantum surface effects on the film are measured. Biological and/or chemical agents can be detected, identified and quantified based on the measured quantum surface effects.

  18. Intrinsically conductive polymer thin film piezoresistors

    DEFF Research Database (Denmark)

    Lillemose, Michael; Spieser, Martin; Christiansen, N.O.

    2008-01-01

    We report on the piezoresistive effect in the intrinsically conductive polymer, polyaniline. A process recipe for indirect patterning of thin film polyaniline has been developed. Using a specially designed chip, the polyaniline thin films have been characterised with respect to resistivity...

  19. Infrared control coating of thin film devices

    Science.gov (United States)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  20. Infrared control coating of thin film devices

    Energy Technology Data Exchange (ETDEWEB)

    Berland, Brian Spencer; Stowell, Jr., Michael Wayne; Hollingsworth, Russell

    2017-02-28

    Systems and methods for creating an infrared-control coated thin film device with certain visible light transmittance and infrared reflectance properties are disclosed. The device may be made using various techniques including physical vapor deposition, chemical vapor deposition, thermal evaporation, pulsed laser deposition, sputter deposition, and sol-gel processes. In particular, a pulsed energy microwave plasma enhanced chemical vapor deposition process may be used. Production of the device may occur at speeds greater than 50 Angstroms/second and temperatures lower than 200.degree. C.

  1. Scanning tunneling spectroscopy of Pb thin films

    Energy Technology Data Exchange (ETDEWEB)

    Becker, Michael

    2010-12-13

    The present thesis deals with the electronic structure, work function and single-atom contact conductance of Pb thin films, investigated with a low-temperature scanning tunneling microscope. The electronic structure of Pb(111) thin films on Ag(111) surfaces is investigated using scanning tunneling spectroscopy (STS). Quantum size effects, in particular, quantum well states (QWSs), play a crucial role in the electronic and physical properties of these films. Quantitative analysis of the spectra yields the QWS energies as a function of film thickness, the Pb bulk-band dispersion in {gamma}-L direction, scattering phase shifts at the Pb/Ag interface and vacuum barrier as well as the lifetime broadening at anti {gamma}. The work function {phi} is an important property of surfaces, which influences catalytic reactivity and charge injection at interfaces. It controls the availability of charge carriers in front of a surface. Modifying {phi} has been achieved by deposition of metals and molecules. For investigating {phi} at the atomic scale, scanning tunneling microscopy (STM) has become a widely used technique. STM measures an apparent barrier height {phi}{sub a}, which is commonly related to the sample work function {phi}{sub s} by: {phi}{sub a}=({phi}{sub s}+{phi}{sub t}- vertical stroke eV vertical stroke)/2, with {phi}{sub t} the work function of the tunneling tip, V the applied tunneling bias voltage, and -e the electron charge. Hence, the effect of the finite voltage in STM on {phi}{sub a} is assumed to be linear and the comparison of {phi}{sub a} measured at different surface sites is assumed to yield quantitative information about work function differences. Here, the dependence of {phi}{sub a} on the Pb film thickness and applied bias voltage V is investigated. {phi}{sub a} is found to vary significantly with V. This bias dependence leads to drastic changes and even inversion of contrast in spatial maps of {phi}{sub a}, which are related to the QWSs in the Pb

  2. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. (Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center); Wei, G. (Mobil Solar Energy Corp., Billerica, MA (United States)); Yu, P.C. (PPG Industries, Inc., Monroeville, PA (United States))

    1991-01-01

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors' institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  3. A monolithic thin film electrochromic window

    Energy Technology Data Exchange (ETDEWEB)

    Goldner, R.B.; Arntz, F.O.; Berera, G.; Haas, T.E.; Wong, K.K. [Tufts Univ., Medford, MA (United States). Electro-Optics Technology Center; Wei, G. [Mobil Solar Energy Corp., Billerica, MA (United States); Yu, P.C. [PPG Industries, Inc., Monroeville, PA (United States)

    1991-12-31

    Three closely related thin film solid state ionic devices that are potentially important for applications are: electrochromic smart windows, high energy density thin film rechargeable batteries, and thin film electrochemical sensors. Each usually has at least on mixed ion/electron conductor, an electron-blocking ion conductor, and an ion-blocking electron conductor, and many of the technical issues associated with thin film solid state ionics are common to all three devices. Since the electrochromic window has the added technical requirement of electrically-controlled optical modulation, (over the solar spectrum), and since research at the authors` institution has focused primarily on the window structure, this paper will address the electrochromic window, and particularly a monolithic variable reflectivity electrochromic window, as an illustrative example of some of the challenges and opportunities that are confronting the thin film solid state ionics community. 33 refs.

  4. Magnetostrictive thin films for microwave spintronics.

    Science.gov (United States)

    Parkes, D E; Shelford, L R; Wadley, P; Holý, V; Wang, M; Hindmarch, A T; van der Laan, G; Campion, R P; Edmonds, K W; Cavill, S A; Rushforth, A W

    2013-01-01

    Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

  5. Nanostructured thin films and coatings functional properties

    CERN Document Server

    Zhang, Sam

    2010-01-01

    The second volume in ""The Handbook of Nanostructured Thin Films and Coatings"" set, this book focuses on functional properties, including optical, electronic, and electrical properties, as well as related devices and applications. It explores the large-scale fabrication of functional thin films with nanoarchitecture via chemical routes, the fabrication and characterization of SiC nanostructured/nanocomposite films, and low-dimensional nanocomposite fabrication and applications. The book also presents the properties of sol-gel-derived nanostructured thin films as well as silicon nanocrystals e

  6. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Energy Technology Data Exchange (ETDEWEB)

    Zeyada, H.M., E-mail: hzeyada@gmail.com [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Youssif, M.I.; El-Ghamaz, N.A. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Aboderbala, M.E.O. [Department of Physics, Faculty of Science at New Damietta, University of Damietta, 34517 (Egypt); Department of Physics, Faculty of Science, AlJabl Al Gharbi University (Libya)

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  7. Spectral, structural, optical and dielectrical studies of UV irradiated Rose Bengal thin films prepared by spin coating technique

    Science.gov (United States)

    Zeyada, H. M.; Youssif, M. I.; El-Ghamaz, N. A.; Aboderbala, M. E. O.

    2017-02-01

    Optical properties of pristine and UV irradiated Rose Bengal (RB) films have been investigated using transmittance and reflectance methods. The refractive index(n) and extinction coefficient (k) have been calculated from the absolute values of transmission and reflection spectrum. Single oscillator parameters and Drude model of free carrier absorption have been applied for analysis of the refractive index dispersion. Within the frame work of the band-to-band electron transitions theory; the fundamental absorption edge data were analyzed. Our results suggest that thickness of RB films has no effect on the absorption or the refractive indices in the investigated thicknesses range and within the experimental error. Structural transformation of films from amorphous to polycrystalline has been observed upon UV irradiation. Accordingly, the decreases of all of the absorption coefficient, the energy gap and the refractive index of RB films have been detected. Furthermore, the dependence of the optical functions on UV exposure times has been discussed based on the spectral distribution of the dielectric constant.

  8. Thin Film Electrochemical Power Cells

    Science.gov (United States)

    1991-01-01

    Anion Intercalating Polymer Cathode", proceedings of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. K. Naoi, W.H...of symposium on Lithium Batteries, The Electrochemical Society , Hollywood, Florida. M. Lien and W.H. Smyrl, "An Impedance Study of Polyvinylferrocene...Films", in Transient Techniques in Corrosion Science and Engineering, eds. W.H. Smyrl, et al., Electrochemical Society , 1989. K, Naoi, M.M. Lien and

  9. PREPARATION AND CHARACTERIZATION OF POLY-CRYSTALLINE SILICON THIN FILM

    Institute of Scientific and Technical Information of China (English)

    Y.F. Hu; H. Shen; Z.Y. Liu; L.S. Wen

    2003-01-01

    Poly-crystalline silicon thin film has big potential of reducing the cost of solar cells.In this paper the preparation of thin film is introduced, and then the morphology of poly-crystalline thin film is discussed. On the film we developed poly-crystalline silicon thin film solar cells with efficiency up to 6. 05% without anti-reflection coating.

  10. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems.

    Science.gov (United States)

    Okabe, Kenji; Jeewan, Horagodage Prabhath; Yamagiwa, Shota; Kawano, Takeshi; Ishida, Makoto; Akita, Ippei

    2015-12-16

    In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI) chip on the very thin parylene film (5 μm) enables the integration of the rectifier circuits and the flexible antenna (rectenna). In the demonstration of wireless power transmission (WPT), the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  11. Mercury Distribution in the Deûle River (Northern France) Measured by the Diffusive Gradients in Thin Films Technique and Conventional Methods.

    Science.gov (United States)

    Diviš, Pavel; Kadlecová, Milada; Ouddane, Baghdad

    2016-05-01

    The distribution of mercury in surface water and in sediment from Deûle River in Northern France was studied by application of conventional sampling methods and by diffusive gradients in thin films technique (DGT). Concentration of total dissolved mercury in surface water was 20.8 ± 0.8 ng l(-1). The particulate mercury concentration was 6.2 ± 0.6 µg g(-1). The particulate mercury was accumulated in sediment (9.9 ± 2.3 mg kg(-1)), and it was transformed by methylating bacteria to methylmercury, mainly in the first 2-cm layer of the sediment. Total dissolved concentration of mercury in sediment pore water obtained by application of centrifugation extraction was 17.6 ± 4.1 ng l(-1), and it was comparable with total dissolved pore water mercury concentration measured by DGT probe containing Duolite GT-73 resin gel (18.2 ± 4.3 ng l(-1)), taking the sediment heterogeneity and different principles of the applied methods into account. By application of two DGT probes with different resin gels specific for mercury, it was found that approximately 30% of total dissolved mercury in sediment pore water was present in labile forms easy available for biota. The resolution of mercury DGT depth profiles was 0.5 cm, which allows, unlike conventional techniques, to study the connection of the geochemical cycle of mercury with geochemical cycles of iron and manganese.

  12. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

    Directory of Open Access Journals (Sweden)

    Kenji Okabe

    2015-12-01

    Full Text Available In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI chip on the very thin parylene film (5 μm enables the integration of the rectifier circuits and the flexible antenna (rectenna. In the demonstration of wireless power transmission (WPT, the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  13. Errors treatment technique for optical parameters characterization of thin film%薄膜光学参数表征误差处理技术

    Institute of Scientific and Technical Information of China (English)

    吴素勇; 龙兴武; 杨开勇

    2012-01-01

    针对光度测量数据中难以消除的系统误差对薄膜光学参数表征精度的负面影响,提出一种新型的误差处理技术.选取薄膜光谱系数对折射率和几何厚度的一阶偏导数,对大部分测量入射角满足符号相反或只有其中一个为零的条件的波段,剔除偏导数对全部测量入射角满足符号相同或同时为零条件的奇点波长附近波段,作为反演表征用的光度测量数据采集区域,以最小化光度测量系统误差引起的薄膜光学参数反演表征值相对真实值的偏差大小.通过数值模拟实验,对比研究了该技术对不同偏振光和不同测量入射角范围的适用性及实施技巧,以可复现的数值实验数据和合理的理论解释支持和验证了这种误差处理技术的可靠性.%A technique of errors treatment is presented according to the negative impact of systematic errors, which is hard to eliminate in photometric measurement data, on the characterization accuracy of thin film optical parameters. In order to minimize the characterization deviations of thin film optical parameters from the real values caused by photometric measurement systematic errors, it is advised to select the photometric measurement data used in optical characterization from spectral bands characterized with opposite signs or single zero of first-order spectral coefficient' s partial derivatives with respect to layer thickness and refractive index for most measurement incident angles, and to exclude spectral bands characterized with the same signs or both zeros of spectral coefficient's first-order partial derivatives for all measurement incident angles. The essence of this technique is to minimize the errors transfer effect of measurement data on thin film optical parameters characterization by spectral band selection with first-order partial derivatives analysis. Numerical simulations have been conducted to investigate its applicability to characterization with

  14. Thermal Expansion Coefficients of Thin Crystal Films

    Institute of Scientific and Technical Information of China (English)

    2005-01-01

    The formulas for atomic displacements and Hamiltonian of a thin crystal film in phonon occupation number representation are obtained with the aid of Green's function theory. On the basis of these results, the formulas for thermal expansion coefficients of the thin crystal film are derived with the perturbation theory, and the numerical calculations are carried out. The results show that the thinner films have larger thermal expansion coefficients.

  15. Formation of indium-doped zinc oxide thin films using chemical spray techniques: The importance of acetic acid content in the aerosol solution and the substrate temperature for enhancing electrical transport

    Energy Technology Data Exchange (ETDEWEB)

    Castaneda, L. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510, D.F. (Mexico); Departamento de Fisica y Matematicas, Division de Estudios Disciplinares, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D.F. (Mexico); Garcia-Valenzuela, A. [Centro de Ciencias Aplicadas y Desarrollo Tecnologico, Universidad Nacional Autonoma de Mexico, Apartado Postal 70-186, 04510, D.F. (Mexico); Zironi, E.P. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, 01000, D.F. (Mexico); Canetas-Ortega, J. [Instituto de Fisica, Universidad Nacional Autonoma de Mexico, Apartado Postal 20-364, 01000, D.F. (Mexico); Terrones, M. [Advanced Materials Department, IPICYT, Camino a la Presa San Jose 2055, Col. Lomas 4a. seccion, San Luis Potosi 78216 (Mexico) and Departamento de Fisica y Matematicas, Division de Estudios Disciplinares, Universidad Iberoamericana, Av. Prolongacion Paseo de la Reforma 880, Santa Fe 012100, D.F. (Mexico)]. E-mail: mterrones@ipicyt.edu.mx; Maldonado, A. [Depto. de Ing. Electrica, CINVESTAV IPN, SEES, Ap. Postal 14740, Mexico D.F. 07000 (Mexico)

    2006-05-01

    Indium-doped zinc oxide (ZnO:In) thin films were grown on glass substrates using the chemical spray technique. The effects of the acetic acid content in the starting solution (c {sub AA}), as well as the substrate temperature (T {sub S}), were studied. Our results demonstrate that when c {sub AA} is extremely low, the resistivity values of the zinc oxide (ZnO) thin films become relatively high (in the order of 4 x 10{sup -2} {omega} cm). When the c {sub AA} is increased at a fixed temperature, the resistivity of the films decreases, reaching values as low as 4 x 10{sup -3} {omega} cm for thin films deposited at 525 deg. C. The electron mobility could also increase to a maximum value of 10.5 cm{sup 2}/(V s) for films deposited at 500 deg. C. We also observed an enhancement in the electrical transport properties of the films by varying T {sub S}; the lowest resistivity values occurred in films deposited at T {sub S} between 475 and 525 deg. C. In addition, the relative intensity of the diffraction peaks associated with the crystallographic planes is strongly affected by the c {sub AA} concentration. X-ray diffraction studies reveal the polycrystalline nature of the films exhibiting a hexagonal wurtzite type, with a preferential orientation of the film depending on the acetic acid concentration. Film morphology was also affected by varying c {sub AA}, as grains with distinct geometrical shapes were observed. Finally, the optical transmittance of all these films was found to be higher than 85%.

  16. Electrical Resistance Tomography of Conductive Thin Films

    CERN Document Server

    Cultrera, Alessandro

    2016-01-01

    The Electrical Resistance Tomography (ERT) technique is applied to the measurement of sheet conductance maps of both uniform and patterned conductive thin films. Images of the sheet conductance spatial distribution, and local conductivity values are obtained. Test samples are tin oxide films on glass substrates, with electrical contacts on the sample boundary, some samples are deliberately patterned in order to induce null conductivity zones of known geometry while others contain higher conductivity inclusions. Four-terminal resistance measurements among the contacts are performed with a scanning setup. The ERT reconstruction is performed by a numerical algorithm based on the total variation regularization and the L-curve method. ERT correctly images the sheet conductance spatial distribution of the samples. The reconstructed conductance values are in good quantitative agreement with independent measurements performed with the van der Pauw and the four-point probe methods.

  17. Preparation and characterization of ultra-thin films containing Au and Ag nanoparticles using layer-by-layer deposition technique

    OpenAIRE

    Cönger, Can Pınar

    2009-01-01

    Ankara : The Department of Chemistry and the Institute of Engineering and Sciences of Bilkent University, 2009. Thesis (Master's) -- Bilkent University, 2009. Includes bibliographical references leaves 69-77. The main objective of this thesis is to investigate the layer-by-layer deposited polyelectrolyte and polyelectrolyte/metal nanoparticle films by using X-ray Photoelectron (XPS) and Optical Spectroscopy (UV-Vis). Within this purpose, in the first part of the study, laye...

  18. BDS thin film damage competition

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, C J; Thomas, M D; Griffin, A J

    2008-10-24

    A laser damage competition was held at the 2008 Boulder Damage Symposium in order to determine the current status of thin film laser resistance within the private, academic, and government sectors. This damage competition allows a direct comparison of the current state-of-the-art of high laser resistance coatings since they are all tested using the same damage test setup and the same protocol. A normal incidence high reflector multilayer coating was selected at a wavelength of 1064 nm. The substrates were provided by the submitters. A double blind test assured sample and submitter anonymity so only a summary of the results are presented here. In addition to the laser resistance results, details of deposition processes, coating materials, and layer count will also be shared.

  19. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    1989-01-01

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization, and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers an opportunity to learn more about basic biological systems with one inmportant variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would make it possible to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  20. Thin film bioreactors in space

    Science.gov (United States)

    Hughes-Fulford, M.; Scheld, H. W.

    Studies from the Skylab, SL-3 and D-1 missions have demonstrated that biological organisms grown in microgravity have changes in basic cellular functions such as DNA, mRNA and protein synthesis, cytoskeleton synthesis, glucose utilization and cellular differentiation. Since microgravity could affect prokaryotic and eukaryotic cells at a subcellular and molecular level, space offers us an opportunity to learn more about basic biological systems with one important variable removed. The thin film bioreactor will facilitate the handling of fluids in microgravity, under constant temperature and will allow multiple samples of cells to be grown with variable conditions. Studies on cell cultures grown in microgravity would enable us to identify and quantify changes in basic biological function in microgravity which are needed to develop new applications of orbital research and future biotechnology.

  1. Synthesis and fabrication of graphene oxide thin film

    Science.gov (United States)

    Kadam, Mahesh M.; Sravani, Medha B.; Gaikar, V. G.; Jha, Neetu

    2013-06-01

    The primary aim of the investigation is to synthesize graphene oxide at room temperature and fabricate a flexible free standing graphene oxide thin film. Modified Hummers technique was employed for the synthesis of graphene oxide using graphite as the starting material. Graphene oxide is a layered material consisting of hydrophilic oxygenated functional groups on their basal planes and edges. Graphene-oxide thin film has been fabricated via solvent-evaporation technique. Functional, elemental and structural analysis of the samples was performed using several characterization techniques.

  2. Application of clustering global optimization to thin film design problems.

    Science.gov (United States)

    Lemarchand, Fabien

    2014-03-10

    Refinement techniques usually calculate an optimized local solution, which is strongly dependent on the initial formula used for the thin film design. In the present study, a clustering global optimization method is used which can iteratively change this initial formula, thereby progressing further than in the case of local optimization techniques. A wide panel of local solutions is found using this procedure, resulting in a large range of optical thicknesses. The efficiency of this technique is illustrated by two thin film design problems, in particular an infrared antireflection coating, and a solar-selective absorber coating.

  3. Improving the optical and crystalline properties on CdS thin films growth on small and large area by using CBD technique

    Energy Technology Data Exchange (ETDEWEB)

    Albor A, M. L.; Flores M, J. M.; Hernandez V, C.; Contreras P, G.; Mejia G, C.; Rueda M, G. [IPN, Escuela Superior de Fisica y Matematicas, Departamento de Fisica, Unidad Profesional Adolfo Lopez Mateos, Zacatenco, 07738 Ciudad de Mexico (Mexico); Gonzalez T, M. A. [IPN, Escuela Superior de Computo, Departamento de Formacion Basica, Unidad Profesional Adolfo Lopez Mateos, 07738 Ciudad de Mexico (Mexico)

    2016-11-01

    CdS polycrystalline thin films have been used as window layer in solar cells; the optical and crystalline quality of the CdS-partner plays and important role in the photovoltaic device performance. CdS thin films were deposited by using Chemical Bath Deposition. The SnO{sub 2}:F substrates used were chemically treated with HCl (0.1 M) and others were thermally annealed in different atmospheres (Ar and O{sub 2}). The physical properties of CdS thin films were influenced by the HCl treatment, position, size and the substrates movement inside the reaction beaker. The CdS samples were deposited in areas of 4 cm{sup 2}, 50 cm{sup 2} and 100 cm{sup 2}. Finally CdS thin films with thickness of 35-300 nm with good optical and crystalline quality on a uniform morphology were obtained. Transmittance values were obtained for all samples about 85-90 % with an average of gap energy of 2.5 eV. The structural characteristics of the samples were determined by the X-ray diffraction patterns, by means of a D-500 Siemens X-ray system. (Author)

  4. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Science.gov (United States)

    Muthu Karuppasamy, K.; Subrahmanyam, A.

    2008-02-01

    In this investigation, vanadium doped tungsten oxide (V : WO3) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm2 C-1), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO3 thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO3 lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO3 with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO3 thin films show good promise in the low maintenance window application.

  5. Results on the electrochromic and photocatalytic properties of vanadium doped tungsten oxide thin films prepared by reactive dc magnetron sputtering technique

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, K Muthu; Subrahmanyam, A [Semiconductor Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036 (India)

    2008-02-07

    In this investigation, vanadium doped tungsten oxide (V : WO{sub 3}) thin films are prepared at room temperature by reactive dc magnetron sputtering employing a tungsten-vanadium 'inlay' target. In comparison with pure sputtered tungsten oxide thin films, 11% vanadium doping is observed to decrease the optical band gap, enhance the colour neutral property, decrease the coloration efficiency (from 121 to 13 cm{sup 2} C{sup -1}), increase the surface work function (4.68-4.83 eV) and significantly enhance the photocatalytic efficiency in WO{sub 3} thin films. These observations suggest that (i) vanadium creates defect levels that are responsible for optical band gap reduction, (ii) multivalent vanadium bonding with terminal oxygen in the WO{sub 3} lattice gives rise to localized covalent bonds and thus results in an increase in the work function, and (iii) a suitable work function of V : WO{sub 3} with ITO results in an enhancement of the photocatalytic activity. These results on electrochromic and photocatalytic properties of V : WO{sub 3} thin films show good promise in the low maintenance window application.

  6. Effect of the annealing and the spraying time on the properties of CZTS thin films prepared by the "Spray sandwich" technique

    Science.gov (United States)

    Mahjoubi, S.; Bitri, N.; Bouzouita, H.; Abaab, M.; Ly, I.

    2017-06-01

    We have investigated synthesis conditions and some properties of sprayed Cu2ZnSnS4 (CZTS) thin films to determine the best preparation conditions for the realization of CZTS-based photovoltaic solar cells. The thin films are made by means of spraying sandwich. To optimize the preparation conditions of the CZTS films, two series of experiments are performed. In the first series, the sprayed duration was changed from 20 to 60 min. In each series, effect annealing was investigated. The X-ray diffraction shows, on one hand, that the best crystalline was obtained after annealing for 60 min as sprayed duration. On the other hand, these CZTS films exhibit the Kesterite structure with preferential orientation along the [112] direction. Raman spectrum indicated the presence of principal Stannite peak 336 cm-1. SEM showed that the surface of CZTS was uniform. After the annealing treatment, we estimated the optical band-gap energy of the CZTS thin film exhibiting the best crystalline as 1.5 eV which is quite close to the optimum value for a solar cell.

  7. Impact of X-ray irradiation on PMMA thin films

    Energy Technology Data Exchange (ETDEWEB)

    Iqbal, Saman, E-mail: saman.khan343@gmail.com [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Rafique, Muhammad Shahid [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Anjum, Safia [Physics Department, Lahore College for Woman University, Lahore (Pakistan); Hayat, Asma [Physics Department, University of Engineering and Technology, Lahore (Pakistan); Iqbal, Nida [Faculty of Biomedical Engineering and Health Science, Universiti Teknologi Malaysia (UTM) (Malaysia)

    2012-10-15

    Highlights: Black-Right-Pointing-Pointer PMMA thin films were deposited at 300 Degree-Sign C and 500 Degree-Sign C using PLD technique. Black-Right-Pointing-Pointer These films were irradiated with different fluence of laser produced X-rays. Black-Right-Pointing-Pointer Irradiation affects the ordered packing as well as surface morphology of film. Black-Right-Pointing-Pointer Hardness of film decreases up to certain value of X-ray fluence. Black-Right-Pointing-Pointer Absorption in UV-visible range exhibits a non linear behavior. - Abstract: The objective of this project is to explore the effect of X-ray irradiation of thin polymeric films deposited at various substrate temperatures. pulsed laser deposition (PLD) technique is used for the deposition of PMMA thin films on glass substrate at 300 Degree-Sign C and 500 Degree-Sign C. These films have been irradiated with various X-rays fluences ranging from 2.56 to 5.76 mJ cm{sup -2}. Characterization of the films (before and after the irradiation) is done with help of X-ray Diffractrometer, Optical Microscope, Vickers hardness tester and UV-vis spectroscopy techniques. From XRD data, it is revealed that ordered packing has been improved for the films deposited at 300 Degree-Sign C. However after irradiation the films exhibited the amorphous behavior regardless of the X-ray fluence. Film deposited at 500 Degree-Sign C shows amorphous structure before and after irradiation. Hardness and particle size of thin film have also increased with the increasing substrate temperature. However, the irradiation has reverse effect i.e. the particle size as well as the hardness has reduced. Irradiation has also enhanced the absorption in the UV-visible region.

  8. The effect of processing conditions on the structural morphology and physical properties of ZnO and CdS thin films produced via sol-gel synthesis and chemical bath deposition techniques

    Science.gov (United States)

    Salam, Shahzad; Islam, Mohammad; Alam, Mahboob; Akram, Aftab; Ikram, Mujtaba; Mahmood, Asif; Khan, Majid; Mujahid, Mohammad

    2011-12-01

    Cadmium sulfide (CdS) and zinc oxide (ZnO) are used in thin film solar cells as buffer layer and transparent conducting oxide, respectively. The effect of annealing conditions on the morphology and physical properties of CdS and ZnO films prepared using chemical bath deposition and sol-gel synthesis techniques, respectively, was investigated. CdS films obtained from the chemical bath deposition (CBD) process were found to be polycrystalline with dense granular morphology. Electrical characterization of the films annealed at 400 °C for 10 min yielded values of 2.2×10-3 Ω cm and 8.3×1012 cm-3 for resistivity and carrier concentration, respectively. Scanning electron microscopy (SEM) and x-ray diffraction (XRD) studies of intrinsic zinc oxide (i-ZnO) films revealed flake-like morphology and transformation of the as-deposited amorphous structure into a hexagonal wurtzite crystal structure upon annealing at 500 °C for 2 h. Optical and electrical characterization results showed that such films had ~80% transmittance and resistivity values as low as 6.4×102 Ω cm. These films are being explored for fabrication and testing of copper-indium-gallium-(di)selenide (CIGS) thin film solar cells obtained from simple, cost-effective, solution-based synthesis routes.

  9. TiO2 thin film photocatalyst

    Institute of Scientific and Technical Information of China (English)

    YU Jiaguo

    2004-01-01

    It is well known that the photocatalytic activity of TiO2 thin films strongly depends on the preparing methods and post-treatment conditions, since they have a decisive influence on the chemical and physical properties of TiO2 thin films.Therefore, it is necessary to elucidate the influence of the preparation process and post-treatment conditions on the photocatalytic activity and surface microstructures of the films. This review deals with the preparation of TiO2 thin film photocatalysts by wet-chemical methods (such as sol-gel, reverse micellar and liquid phase deposition) and the comparison of various preparation methods as well as their advantage and disadvantage. Furthermore, it is discussed that the advancement of photocatalytic activity, super-hydrophilicity and bactericidal activity of TiO2 thin film photocatalyst in recent years.

  10. Synthesis of thin films by the pyrosol process

    Directory of Open Access Journals (Sweden)

    Tucić Aleksandar

    2002-01-01

    Full Text Available Among many aerosol routes, the Pyrosol process, due to its simplicity, low cost and quality of obtained films, represents a promising technique for the synthesis of thin films. The pyrosol process is based on the transport and pyrolysls of an aerosol of processor solution, generated in an ultrasonic atomizer, on a heated substrate. The theoretical principles of the pyrosol process are presented in this paper, as well as the influence of some synthesis parameters on the deposition of SnO2 thin films.

  11. Visualization of latent fingerprints using Prussian blue thin films

    Institute of Scientific and Technical Information of China (English)

    Gang Qin; Mei-Qin Zhang; Yang Zhang; Yu Zhu; Shou-Liang Liu; Wen-Jin Wu; Xue-Ji Zhang

    2013-01-01

    Herein,a facile and effective approach was proposed for visualizing latent fingerprints (LFPs) on two kinds of conductive surfaces by spatially selective electrochemical deposition of Prussian blue (PB) thin films.This strategy exploited the fingerprint residue as an insulating mask and the PB thin films were only generated on the bare surface including the valleys between the papillary ridges,which produced a negative image of LFPs with high resolution up to the third level information.The surface morphology of PB films was characterized by the field emission scanning electron microscopy (FE-SEM).This enhancement technique showed promising performance in selected materials of practical interest.

  12. Thin films growth parameters in MAPLE; application to fibrinogen

    Energy Technology Data Exchange (ETDEWEB)

    Jelinek, M [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Cristescu, R [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Kocourek, T [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Vorlicek, V [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Remsa, J [Institute of Physics ASCR, Na Slovance 2, 182 21Prague 8 (Czech Republic); Stamatin, L [Longhin Scarlat Dermato-Venerologic Hospital, Bucharest (Romania); Mihaiescu, D [University of Agriculture Sciences and Veterinary Medicine, 59 Marasti, Bucharest (Romania); Stamatin, I [University of Bucharest, Faculty of Physics, PO Box MG-11, 3Nano-SAE, Bucharest-Magurele (Romania); Mihailescu, I N [National Institute for Laser, Plasma and Radiation Physics, MG-36, RO-77125, Bucharest (Romania); Chrisey, D B [Naval Research Laboratory, Code 6851 Washington, DC 20375 (United States)

    2007-04-15

    Increasingly requirements on the thin film quality of functionalized materials are efficiently met by a novel laser processing technique - Matrix Assisted Pulsed Laser Evaporation (MAPLE). Examples of deposition conditions and main features characteristic to film growth rate of MAPLE-fabricated organic materials are summarized. MAPLE experimental results are compared with ones corresponding to the classical Pulsed Laser Deposition (PLD). In particular, the results of investigation of MAPLE-deposited fibrinogen blood protein thin films using a KrF* excimer laser and characterized by FTIR and Raman spectrometry are reported.

  13. MOVPE and MBE growth of semiconductor thin films

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Tarun Kumar [Semiconductor Laser Section Raja Ramanna Centre for Advanced Technology, Indore-452 103 (M.P) (India)

    2012-06-25

    Fundamental aspects of MBE and MOVPE growth techniques are briefly discussed. The capabilities and limitation of the two epitaxial growth techniques are summarized. A few examples of the MOVPE and MBE growth of high crystalline quality semiconductor thin films are also given including the characterization results obtained from spectroscopic and high resolution x-ray diffraction methods.

  14. Fabrication of hierarchically ordered crystalline titania thin films

    Energy Technology Data Exchange (ETDEWEB)

    Niedermeier, Martin; Kaune, Gunar; Rawolle, Monika; Koerstgens, Volker; Ruderer, Matthias; Mueller-Buschbaum, Peter [TU Muenchen, Physik-Department LS E13, Garching (Germany); Gutmann, Jochen S. [Max-Planck Institute for Polymer Research, Mainz (Germany)

    2010-07-01

    Thin films of nanostructured titania have received a lot of attention in various applications such as photovoltaics within the last years. Having a well defined morphology is crucial for the functionality and performance of these films because it defines the volume to surface ratio and thereby the surface being available for interface reactions. Increasing the total film thickness is a common approach in order to increase the surface area. The present work focuses on the fabrication of hierarchically structured titania thin films and their crystallinity. A layer-by-layer spin-coating approach is investigated. A solution based sol-gel process using diblock copolymers as a template to obtain nanocomposite films is followed by calcination to obtain crystalline titania structures. The obtained structures are investigated using several imaging techniques like SEM and AFM. The crystallinity and the thickness of the films are analyzed with XRD and XRR.

  15. Interfacial Effects on Pentablock Ionomer Thin Films

    Science.gov (United States)

    Etampawala, Thusitha; Ratnaweera, Dilru; Osti, Naresh; Shrestha, Umesh; Perahia, Dvora; Majewski, Jaroslaw

    2011-03-01

    The interfacial behavior of multi block copolymer thin films results from a delicate balance between inherent phase segregation due to incompatibility of the blocks and the interactions of the individual blocks with the interfaces. Here in we report a study of thin films of ABCBA penta block copolymers, anionically synthesized, comprising of centered randomly sulfonated polystyrene block to which rubbery poly-ethylenebutalene is connected, terminated by blocks of poly-t-butylstyrene, kindly provided by Kraton. AFM and neutron reflectometry studies have shown that the surface structure of pristine films depends on film thickness and ranges from trapped micelles to thin layered films. Annealing above Tg for the styrene block results in rearrangements into relatively featureless air interface. Neutron reflectivity studies have shown that annealed films forms layers whose plane are parallel to the solid substrate with the bulky block at the air interface and the ionic block at the solid interface.

  16. Plasmonic modes in thin films: quo vadis?

    Directory of Open Access Journals (Sweden)

    Antonio ePolitano

    2014-07-01

    Full Text Available Herein, we discuss the status and the prospect of plasmonic modes in thin films. Plasmons are collective longitudinal modes of charge fluctuation in metal samples excited by an external electric field. Surface plasmons (SPs are waves that propagate along the surface of a conductor with applications in magneto-optic data storage, optics, microscopy, and catalysis. In thin films the electronic response is influenced by electron quantum confinement. Confined electrons modify the dynamical screening processes at the film/substrate interface by introducing novel properties with potential applications and, moreover, they affect both the dispersion relation of SP frequency and the damping processes of the SP.Recent calculations indicate the emergence of acoustic surface plasmons (ASP in Ag thin films exhibiting quantum well states and in graphene films. The slope of the dispersion of ASP decreases with film thickness. We also discuss open issues in research on plasmonic modes in graphene/metal interfaes.

  17. Critical current density and ac harmonic voltage generation in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films by the screening technique

    Energy Technology Data Exchange (ETDEWEB)

    Perez-Lopez, Israel O., E-mail: iperez@mda.cinvestav.m [Applied Physics Department, Cinvestav Unidad Merida, Km 6 Ant., Carretera a Progreso, A.P. 73, C.P. 97310 Merida, Yucatan (Mexico); Gamboa, Fidel; Sosa, Victor [Applied Physics Department, Cinvestav Unidad Merida, Km 6 Ant., Carretera a Progreso, A.P. 73, C.P. 97310 Merida, Yucatan (Mexico)

    2010-12-15

    The temperature and field dependence of harmonics in voltage V{sub n}=V{sub n}{sup '}-iV{sub n}{sup ''} using the screening technique have been measured for YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} superconducting thin films. Using the Sun model we obtained the curves for the temperature-dependent critical current density J{sub c}(T). In addition, we applied the criterion proposed by Acosta et al. to compute J{sub c}(T). Also, we made used of the empirical law J{sub c{proportional_to}}(1-T/T{sub c}){sup n} as an input in our calculations to reproduce experimental harmonic generation up to the fifth harmonic. We found that most models fit well the fundamental voltage but higher harmonics are poorly reproduced. Such behavior suggests the idea that higher harmonics contain information concerning complex processes like flux creep or thermally assisted flux flow.

  18. Porous TiO2-ZrO2 thin film formed by electrochemical technique to improve the biocompatibility of titanium alloy in physiological environment

    Science.gov (United States)

    Benea, L.; Dănăilă, E.; Ponthiaux, P.

    2017-02-01

    Porous Ti and Ti alloys have received increasing research interest for bone tissue engineering, especially for dental and orthopaedic implants because they provide cell ingrowths and vascularization, improving of adhesion and osseointegration. The tribocorrosion process is encountered in orthopaedic and dentistry applications, since it is known that the implants are often exposed to simultaneous chemical/electrochemical and mechanical stresses. The purpose of this study was to carry out a systematic investigation of the tribo-electrochemical performance of porous TiO2-ZrO2 thin film formed by anodization of Ti-10Zr alloy surface in an artificial saliva solution and to compare the resulted performance with that of the untreated Ti-10Zr alloy surface in order to be applied for biomedical use. The in situ electrochemical technique used for investigation of tribo-electrochemical degradation was the open circuit potential (OCP) measurement performed before, during and after sliding tests. The results presented herein show that controlled anodic oxidation method can significantly improve the tribocorrosion and friction performances of Ti-10Zr alloy surface intended for biomedical applications.

  19. PEDOT:PSS thin film for photovoltaic application

    Directory of Open Access Journals (Sweden)

    J. Weszka

    2013-08-01

    Full Text Available Purpose: The aim of this paper was to investigate changes in surface morphology and optical parameters of thin films of poly(3,4-ethylenedioxythiophene poly(styrenesulfonate (PEDOT:PSS. Thin films were prepared using spin coating method. Design/methodology/approach: The thin films of PEDOT:PSS was investigate by Raman scattering technique in Raman spectrometer. The changes in surface topography were observed with the atomic force microscope AFM XE-100. The results of roughness have been prepared in the software XEI Park Systems. The measurement of optical parameter was performed using spectrometer UV/VIS and spectroscopic ellipsometer. Findings: Results and their analysis allow to conclude that the PEDOT:PSS solution concentration and spin speed, an important factor in spin coating technology, have a significant influence on surface morphology and optical reflection of thin films. Practical implications: Knowledge about the sol gel PEDOT:PSS optical parameters and the possibility of obtaining a uniform thin films show that it can be good material for photovoltaic and optoelectronic devices. Originality/value: The paper presents some researches of PEDOT:PSS thin films deposited by spin coating method on glass substrate

  20. Characterization of polymer thin films obtained by pulsed laser deposition

    Science.gov (United States)

    Palla-Papavlu, A.; Dinca, V.; Ion, V.; Moldovan, A.; Mitu, B.; Luculescu, C.; Dinescu, M.

    2011-04-01

    The development of laser techniques for the deposition of polymer and biomaterial thin films on solid surfaces in a controlled manner has attracted great attention during the last few years. Here we report the deposition of thin polymer films, namely Polyepichlorhydrin by pulsed laser deposition. Polyepichlorhydrin polymer was deposited on flat substrate (i.e. silicon) using an NdYAG laser (266 nm, 5 ns pulse duration and 10 Hz repetition rate). The obtained thin films have been characterized by atomic force microscopy, scanning electron microscopy, Fourier transform infrared spectroscopy and spectroscopic ellipsometry. It was found that for laser fluences up to 1.5 J/cm 2 the chemical structure of the deposited polyepichlorhydrin polymer thin layers resembles to the native polymer, whilst by increasing the laser fluence above 1.5 J/cm 2 the polyepichlorohydrin films present deviations from the bulk polymer. Morphological investigations (atomic force microscopy and scanning electron microscopy) reveal continuous polyepichlorhydrin thin films for a relatively narrow range of fluences (1-1.5 J/cm 2). The wavelength dependence of the refractive index and extinction coefficient was determined by ellipsometry studies which lead to new insights about the material. The obtained results indicate that pulsed laser deposition method is potentially useful for the fabrication of polymer thin films to be used in applications including electronics, microsensor or bioengineering industries.

  1. Film-thickness dependence of structure formation in ultra-thin polymer blend films

    CERN Document Server

    Gutmann, J S; Stamm, M

    2002-01-01

    We investigated the film-thickness dependence of structure formation in ultra-thin polymer blend films prepared from solution. As a model system we used binary blends of statistical poly(styrene-co-p-bromostyrene) copolymers of different degrees of bromination. Ultra-thin-film samples differing in miscibility and film thickness were prepared via spin coating of common toluene solutions onto silicon (100) substrates. The resulting morphologies were investigated with scanning force microscopy, reflectometry and grazing-incidence scattering techniques using both X-rays and neutrons in order to obtain a picture of the sample structure at and below the sample surface. (orig.)

  2. The use of synchrotron radiation techniques in the characterization of strained semiconductor heterostructures and thin films [review article

    Science.gov (United States)

    Lamberti, C.

    2004-05-01

    In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques. Among them, a leading role has been certainly played by those exploiting synchrotron radiation (SR) sources. In fact synchrotron radiation has distinct advantages as a photon source, notably high brilliance and continuous energy spectrum; by using the latter characteristic atomic selectivity can be obtained and this is of fundamental help to investigate the structural environment of atoms present only in a few angstrom (Å) thick interface layers of heterostructures. The third generation synchrotron radiation sources have allowed to reach the limit of measuring a monolayer of material, corresponding to about 10 14 atoms/cm 2. Since, in the last decade, the use of intentionally strained heterostructures has greatly enhanced the performance of electrical and electro-optical semiconductor, a particular attention will be devoted to intentionally strained superlattices. First the effect of strain on the band lineups alignments in strained heterostructures will be discussed deeply. Then the attention will be focused on to review the most important results obtained by several groups in the characterization of semiconductor heterostructures using the following structural SR techniques: (i) X-ray absorption-based techniques such as EXAFS, polarization-dependent EXAFS, surface EXAFS and NEXAFS (or XANES); (ii) X-ray diffraction-based techniques such as high-resolution XRD, grazing incidence XRD, XRD reciprocal space maps, X-ray standing waves and diffraction anomalous fine structure (DAFS); (iii

  3. Emergent topological phenomena in thin films of pyrochlore iridates.

    Science.gov (United States)

    Yang, Bohm-Jung; Nagaosa, Naoto

    2014-06-20

    Because of the recent development of thin film and artificial superstructure growth techniques, it is possible to control the dimensionality of the system, smoothly between two and three dimensions. In this Letter we unveil the dimensional crossover of emergent topological phenomena in correlated topological materials. In particular, by focusing on the thin film of pyrochlore iridate antiferromagnets grown along the [111] direction, we demonstrate that the thin film can have a giant anomalous Hall conductance, proportional to the thickness of the film, even though there is no Hall effect in 3D bulk material. Moreover, in the case of ultrathin films, a quantized anomalous Hall conductance can be observed, despite the fact that the system is an antiferromagnet. In addition, we uncover the emergence of a new topological phase, the nontrivial topological properties of which are hidden in the bulk insulator and manifest only in thin films. This shows that the thin film of correlated topological materials is a new platform to search for unexplored novel topological phenomena.

  4. Semiconducting properties of Al doped ZnO thin films.

    Science.gov (United States)

    Al-Ghamdi, Ahmed A; Al-Hartomy, Omar A; El Okr, M; Nawar, A M; El-Gazzar, S; El-Tantawy, Farid; Yakuphanoglu, F

    2014-10-15

    Aluminum doped ZnO (AZO) thin films were successfully deposited via spin coating technique onto glass substrates. Structural properties of the films were analyzed by X-ray diffraction, atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy. X-ray diffraction results reveal that all the films are polycrystalline with a hexagonal wurtzite structure with a preferential orientation according to the direction (002) plane. The crystallite size of ZnO and AZO films was determined from Scherrer's formula and Williamson-Hall analysis. The lattice parameters of the AZO films were found to decrease with increasing Al content. Energy dispersive spectroscopy (EDX) results indicate that Zn, Al and O elements are present in the AZO thin films. The electrical conductivity, mobility carriers and carrier concentration of the films are increased with increasing Al doping concentration. The optical band gap (Eg) of the films is increased with increasing Al concentration. The AZO thin films indicate a high transparency in the visible region with an average value of 86%. These transparent AZO films may be open a new avenue for optoelectronic and photonic devices applications in near future.

  5. Anisotropic Heisenberg model in thin film geometry

    Energy Technology Data Exchange (ETDEWEB)

    Akıncı, Ümit

    2014-01-01

    The effect of the anisotropy in the exchange interaction on the phase diagrams and magnetization behavior of the Heisenberg thin film has been investigated with effective field formulation in a two spin cluster using the decoupling approximation. Phase diagrams and magnetization behaviors have been obtained for several different cases, by grouping the systems in accordance with, whether the surfaces/interior of the film has anisotropic exchange interaction or not. - Highlights: • Phase diagrams of the anisotropic Heisenberg model on the thin film obtained • Dependence of the critical properties on the film thickness obtained • Effect of the anisotropy on the magnetic properties obtained.

  6. Insect thin films as solar collectors.

    Science.gov (United States)

    Heilman, B D; Miaoulis, L N

    1994-10-01

    A numerical method for simulation of microscale radiation effects in insect thin-film structures is described. Accounting for solar beam and diffuse radiation, the model calculates the reflectivity and emissivity of such structures. A case study examines microscale radiation effects in butterfuly wings, and results reveal a new function of these multilayer thin films: thermal regulation. For film thicknesses of the order of 0.10 µm, solar absorption levels vary by as much as 25% with small changes in film thickness; for certain existing structures, absorption levels reach 96%., This is attributed to the spectral distribution of the reflected radiation, which consists of a singular reflectance peak within the solar spectrum.

  7. Electronic processes in thin-film PV materials. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, P.C.; Chen, D.; Chen, S.L. [and others

    1998-07-01

    The electronic and optical processes in an important class of thin-film PV materials, hydrogenated amorphous silicon (a-Si:H) and related alloys, have been investigated using several experimental techniques designed for thin-film geometries. The experimental techniques include various magnetic resonance and optical spectroscopies and combinations of these two spectroscopies. Two-step optical excitation processes through the manifold of silicon dangling bond states have been identifies as important at low excitation energies. Local hydrogen motion has been studied using nuclear magnetic resonance techniques and found to be much more rapid than long range diffusion as measured by secondary ion mass spectroscopy. A new metastable effect has been found in a-Si:H films alloyed with sulfur. Spin-one optically excited states have been unambiguously identified using optically detected electron spin resonance. Local hydrogen bonding in microcrystalline silicon films has been studied using NMR.

  8. Synthesis of the CulnSe2 thin film for solar cells using the electrodeposition technique and Taguchi method

    Institute of Scientific and Technical Information of China (English)

    Wei-long Liu; Shu-huei Hsieh; Wen-jauh Chen; Pei-i Wei; Jiing-herng Lee

    2009-01-01

    The Taguchi method was used to obtain the optimum electrodeposition parameters for the synthesis of the CuInSe2 thinfilm for solar cells.The parameters consist of annealing temperature,current density,CuCl2 concentration,FeCl3 concentration,H2SeO3 concentration,TEA amount,pH value,and deposition time.The experiments were carried out according to an L18(2137) table.An X-ray diffractometer (XRD) and a scanning electron microscope (SEM) were respectively used to analyze the phases and observe the microstructure and the grain size of the CuInSe2 film before and after annealing treatment.The results showed that the CuInSe2phase was deposited with a preferred plane (112) parallel to the substrate surface.The optimum parameters are as follows:currentdensity,7 mA/cm2;CuCl2 concentration,10 raM;FeCl3 concentration,50 raM;H2SeO3 concentration,15 mM;TEA amount,0 mL;pH value,1.65;deposition time,10 min;and annealing temperature,500℃.

  9. Polycrystalline-thin-film thermophotovoltaic cells

    Science.gov (United States)

    Dhere, Neelkanth G.

    1996-02-01

    -electronic (infrared detectors, lasers, and optical communications) technologies. Low bandgaps and larger fluences employed in TPV cells result in very high current densities which make it difficult to collect the current effectively. Techniques for laser and mechanical scribing, integral interconnection, and multi-junction tandem structures which have been fairly well developed for thin-film PV solar cells could be further refined for enhancing the voltages from TPV modules. Thin-film TPV cells may be deposited on metals or back-surface reflectors. Spectral control elements such as indium-tin oxide or tin oxide may be deposited directly on the TPV convertor. It would be possible to reduce the cost of TPV technologies based on single-crystal materials being developed at present to the range of US 2-5 per watt so as to be competitive in small to medium size commercial applications. However, a further cost reduction to the range of US ¢ 35- 1 per watt to reach the more competitive large-scale residential, consumer, and hybrid-electric car markets would be possible only with the polycrystalline-thin film TPV cells.

  10. Physics of thin films advances in research and development, v.6

    CERN Document Server

    Francombe, Maurice H

    1971-01-01

    Physics of Thin Films: Advances in Research and Development, Volume 6 reviews the rapid progress that has been made in research and development concerning the physics of thin films, with emphasis on metallic films. Topics covered include anodic oxide films, thin metal films and wires, and multilayer magnetic films. This volume is comprised of five chapters and begins with a discussion on the dielectric properties and the technique of plasma anodization which are relevant to the applications of anodic oxide films in electronic devices. Conduction, polarization, and dielectric breakdown effects

  11. Chemical bath deposition and characterization of Cu2O-CuxS thin films

    OpenAIRE

    EYA, D. D. O.

    2010-01-01

    Cu2O-CuxS thin films have been deposited on glass substrate by chemical bath deposition technique. The films were obtained by depositing Copper Sulphide (CuxS) on Copper (I) Oxide (Cu2O) and then Cu2O on CuxS. The peak solar transmittance across the thin films were found to be

  12. Ferromagnetic properties of fcc Gd thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bertelli, T. P., E-mail: tambauh@gmail.com; Passamani, E. C.; Larica, C.; Nascimento, V. P.; Takeuchi, A. Y. [Universidade Federal do Espírito Santo, Departamento de Física, Vitória/ES 29075-910 (Brazil); Pessoa, M. S. [Universidade Federal do Espírito Santo, Departamento de Ciências Naturais, São Mateus/ES 29932-540 (Brazil)

    2015-05-28

    Magnetic properties of sputtered Gd thin films grown on Si (100) substrates kept at two different temperatures were investigated using X-ray diffraction, ac magnetic susceptibility, and dc magnetization measurements. The obtained Gd thin films have a mixture of hcp and fcc structures, but with their fractions depending on the substrate temperature T{sub S} and film thickness x. Gd fcc samples were obtained when T{sub S} = 763 K and x = 10 nm, while the hcp structure was stabilized for lower T{sub S} (300 K) and thicker film (20 nm). The fcc structure is formed on the Ta buffer layer, while the hcp phase grows on the fcc Gd layer as a consequence of the lattice relaxation process. Spin reorientation phenomenon, commonly found in bulk Gd species, was also observed in the hcp Gd thin film. This phenomenon is assumed to cause the magnetization anomalous increase observed below 50 K in stressed Gd films. Magnetic properties of fcc Gd thin films are: Curie temperature above 300 K, saturation magnetization value of about 175 emu/cm{sup 3}, and coercive field of about 100 Oe at 300 K; features that allow us to classify Gd thin films, with fcc structure, as a soft ferromagnetic material.

  13. Improved transport properties of polycrystalline YBCO thin-films

    Science.gov (United States)

    Azoulay, J.; Verdyan, A.; Lapsker, I.

    1994-12-01

    Resistive evaporation technique was used to fabricate polycrystalline YBaCuO and YBaNaCuO thin films on MgO substrates. Heat treatment was carried out in a low oxygen partial pressure. Polycrystalline YBCO and Na doped YBCO thin films samples were thus obtained using the same technique and conditions. The critical current density of Na doped YBCO sample was measured to be significantly higher than that of the undoped YBCO one. The results are discussed in terms of the Na contribution to the intragrain conductivity.

  14. Correlation between physical properties and growth mechanism of In2S3 thin films fabricated by electrodeposition technique with different deposition times

    Science.gov (United States)

    Braiek, Zied; Gannouni, Mounir; Ben Assaker, Ibtissem; Bardaoui, Afrah; Lamouchi, Amina; Brayek, A.; Chtourou, Radhouane

    2015-10-01

    Indium sulfide (In2S3) thin films were grown on ITO-coated glass substrate using the electrodeposition method. The effect of the deposition time on the structural, morphological, optical and electrical properties of the as-grown In2S3 thin films was studied. XRD spectra of the obtained films reveal the polycrystalline nature of (β-In2S3) with a tetragonal crystal structure along the (109) plane, and exhibit a sharp transition to the (0012) plane when the deposition time is extended beyond 20 min. Using atomic force microscope (AFM), the surface morphology shows a remarkable change in the grain size, thickness, and surface roughness when varying the deposition time. UV-VIS spectrophotometer show that the optical band gap values of In2S3 decrease from about 2.82 to 1.93 eV by extending the electrodeposition duration from 5 to 20 min. All films were found to have an n-type character with a lower electrical resistivity of about 1.8×10-3 Ω cm for films deposited at 20 min.

  15. Effect of Sn Doping on the Properties of Nano-Structured ZnO Thin Films Deposited by Co-Sputtering Technique.

    Science.gov (United States)

    Islam, M A; Rahman, K S; Haque, F; Khan, N A; Akhtaruzzaman, M; Alam, M M; Ruslan, H; Sopian, K; Amin, N

    2015-11-01

    In this study, tin doped zinc oxide (ZnO:Sn) nano-structured thin films were successfully deposited by co-sputtering of ZnO and Sn on top of glass substrate. The effect of Sn doping on the microstructure, phase, morphology, optical and electrical properties of the films were extensively investigated by means of XRD, EDX, SEM, AFM, Hall Effect measurement, and UV-Vis spectrometry. The results showed that the undoped ZnO film exhibited preferred orientation along the c-axis of the hexagonal wurtzite structure. With increase of Sn doping, the peak position of the (002) plane was shifted to the higher 20 values, and ultimately changed to amorphous structure. The absorption edge was shifted to blue region which confirmed the excitonic quantum confinement effect in the films. Consequently, improved surface morphology with optical bandgap, reduced average particle size, reduced resistivity, enhanced Hall mobility and carrier concentration were observed in the doped films after vacuum annealing. Among all of the as-deposited and annealed ZnO:Sn films investigated in this study, annealed film doped with 8 at.% of Sn concentration exhibited the best properties with a bandgap of 3.84 eV, RMS roughness of 2.51 nm, resistivity of 2.36 ohm-cm, and Hall mobility of 83 cm2 V(-1) s(-1).

  16. Electroluminescence Spectrum Shift with Switching Behaviour of Diamond Thin Films

    Institute of Scientific and Technical Information of China (English)

    王小平; 王丽军; 张启仁; 姚宁; 张兵临

    2003-01-01

    We report a special phenomenon on switching behaviour and the electroluminescence (EL) spectrum shift of doped diamond thin films. Nitrogen and cerium doped diamond thin films were deposited on a silicon substrate by microwave plasma-assisted chemical vapour deposition system and other special techniques. An EL device with a three-layer structure of nitrogen doped diamond/cerium doped diamond/SiO2 thin films was made. The EL device was driven by a direct-current power supply. Its EL character has been investigated, and a switching behaviour was observed. The EL light emission colour of diamond films changes from yellow (590nm) to blue (454 nm) while the switching behaviour appears.

  17. Thin film assembly of nanosized cobalt(II) bis(5-phenyl-azo-8-hydroxyquinolate) using static step-by-step soft surface reaction technique: Structural characterization and optical properties

    Science.gov (United States)

    Seleim, S. M.; Hamdalla, Taymour A.; Mahmoud, Mohamed E.

    2017-09-01

    Nanosized (NS) cobalt (II) bis(5-phenyl-azo-8-hydroxyquinolate) (NS Co(II)-(5PA-8HQ)2) thin films have been synthesized using static step-by-step soft surface reaction (SS-b-SSR) technique. Structural and optical characterizations of these thin films have been carried out using thermal gravimetric analysis (TGA), Fourier transform infrared (FT-IR), scanning electron microscopy (SEM), high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD). The HR-TEM results revealed that the assembled Co(II)-complex exhibited a uniformly NS structure particles in the form of nanorods with width and length up to 16.90 nm and 506.38 nm, respectively. The linear and nonlinear optical properties have been investigated. The identified energy gap of the designed thin film materials was found 4.01 eV. The refractive index of deposited Co(II)-complex thin film was identified by thickness-dependence and found as 1.9 at wavelength 1100 nm. In addition, the refractive index was varied by about 0.15 due to an increase in the thickness by 19 nm.

  18. Thin films for geothermal sensing: Final report

    Energy Technology Data Exchange (ETDEWEB)

    1987-09-01

    The report discusses progress in three components of the geothermal measurement problem: (1) developing appropriate chemically sensitive thin films; (2) discovering suitably rugged and effective encapsulation schemes; and (3) conducting high temperature, in-situ electrochemical measurements. (ACR)

  19. Manganese ferrite thin films Part II: Properties

    NARCIS (Netherlands)

    Hulscher, W.S.

    1972-01-01

    Some properties of evaporated manganese ferrite thin films are investigated, e.g. resistivity, magnetization reversal, Curie temperature, Faraday rotation and optical absorption. The properties are partly related to the partial oxygen pressure present during a preceding annealing process.

  20. Thin Film Photovoltaics: Markets and Industry

    National Research Council Canada - National Science Library

    Jäger-Waldau, Arnulf

    2012-01-01

    ...% of worldwide production. Between 2005 and 2009, thin film production capacity and volume increased more than the overall industry but did not keep up in 2010 and 2011 due to the rapid price decline for solar modules...

  1. Highly stretchable wrinkled gold thin film wires

    Science.gov (United States)

    Kim, Joshua; Park, Sun-Jun; Nguyen, Thao; Chu, Michael; Pegan, Jonathan D.; Khine, Michelle

    2016-02-01

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  2. Highly stretchable wrinkled gold thin film wires

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joshua, E-mail: joshuk7@uci.edu; Park, Sun-Jun; Nguyen, Thao [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Chu, Michael [Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States); Pegan, Jonathan D. [Department of Materials and Manufacturing Technology, University of California, Irvine, California 92697 (United States); Khine, Michelle, E-mail: mkhine@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Biomedical Engineering, University of California, Irvine, California 92697 (United States)

    2016-02-08

    With the growing prominence of wearable electronic technology, there is a need to improve the mechanical reliability of electronics for more demanding applications. Conductive wires represent a vital component present in all electronics. Unlike traditional planar and rigid electronics, these new wearable electrical components must conform to curvilinear surfaces, stretch with the body, and remain unobtrusive and low profile. In this paper, the piezoresistive response of shrink induced wrinkled gold thin films under strain demonstrates robust conductive performance in excess of 200% strain. Importantly, the wrinkled metallic thin films displayed negligible change in resistance of up to 100% strain. The wrinkled metallic wires exhibited consistent performance after repetitive strain. Importantly, these wrinkled thin films are inexpensive to fabricate and are compatible with roll to roll manufacturing processes. We propose that these wrinkled metal thin film wires are an attractive alternative to conventional wires for wearable applications.

  3. Photonic thin film fabrication and characterization for display applications

    Science.gov (United States)

    Sun, Xiaowei

    In this thesis, the fabrication and characterization of various kinds of thin films useful for display applications are discussed. The fabrication technique used was mainly pulsed laser deposition, sputtering was also used to fabricate ITO films on glass. In-situ resistance measurement was used to characterize the initial growth of ITO thin films on glass. It was found that at a growth temperature of 150°C or above, ITO grows via a 2D layer by layer growth mechanism with a conductive critical thickness of about one lattice constant. With the growth temperature of less than 150°C, the films grow via a 3D growth mode. The growth mode transition also coincides with the amorphous to poly transition. In this thesis, a novel pulsed laser deposition technique called liquid target pulsed laser deposition was reported. It was used to fabricate GaN thin films from a gallium liquid. Liquid target pulsed laser deposition, to a certain extent, overcomes the target deterioration, target rotation, and splashing problems compared to traditional solid target pulsed laser deposition. Reasonably good crystal quality GaN thin films were fabricated on various substrates of quartz, silicon, and sapphire with a thin layer of ZnO buffer. Epitaxially grown GaN films were fabricated on ZnO buffered sapphire at an elevated substrate temperature. We studied the optical properties of epitaxially grown ZnO thin film on sapphire by photoluminescence measurement and variable angle spectroscopic ellipsometry. The bandgap, at room temperature and at 10K, and the refractive index of ZnO on sapphire were obtained. Phosphor thin film is an important topic in display application for color representation. In this thesis, we report the fabrication of red, green and blue primary color silicate phosphor thin films on silicon and silicon dioxide covered silicon substrates by pulsed laser deposition. By annealing at 800°C--1000°C, reasonably good purity red, green and blue photoluminescence were obtained

  4. In-depth elemental characterization of Cu(In,Ga)Se2 thin film solar cells by means of RBS and PIXE techniques

    Science.gov (United States)

    Karydas, A. G.; Bogdanovic Radovic, I.; Streeck, C.; Kaufmann, C.; Caballero, R.; Rissom, T.; Kanngießer, B.; Beckhoff, B.; Jaksic, M.; Barradas, N. P.

    2014-07-01

    Thin films based on Cu(In,Ga)Se2 are used as absorber cells in photovoltaic devices. In and Ga graded depth profiles are designed to optimize the solar cell performance. Simultaneous Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with 3 MeV 4He ions were used in conjunction to determine the depth profile of all the heavy elements in Cu(In,Ga)Se2 absorbers and complete solar cells. The RBS and PIXE data from one sample were analyzed synergistically, providing reliable depth profiles that satisfy all the data collected. An uncertainty analysis was done, probing the sensitivity of the analysis to different assumptions. The analytical possibilities of the combined RBS/PIXE alpha beam measurements of the CIGSe thin film solar cells, as well as the uncertainties induced in the quantitative methodology are discussed and critically assessed.

  5. In-depth elemental characterization of Cu(In,Ga)Se{sub 2} thin film solar cells by means of RBS and PIXE techniques

    Energy Technology Data Exchange (ETDEWEB)

    Karydas, A.G. [International Atomic Energy Agency (IAEA), IAEA Laborarories, A-2444 Seibersdorf (Austria); Bogdanovic Radovic, I. [Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Streeck, C. [Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institut Technologie, Hahn-Meitner-Platz 1, 14109 Berlin (Germany); Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Kaufmann, C.; Caballero, R.; Rissom, T. [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Kanngießer, B. [Technische Universität Berlin, Institut für Optik und Atomare Physik, 10623 Berlin (Germany); Beckhoff, B. [Physikalisch-Technische Bundesanstalt, Abbestr. 2-12, 10587 Berlin (Germany); Jaksic, M. [Ruđer Bošković Institute, P.O. Box 180, 10002 Zagreb (Croatia); Barradas, N.P., E-mail: nunoni@ctn.ist.utl.pt [Centro de Ciências e Tecnologias Nucleares, Instituto Superior Técnico, Universidade de Lisboa, E. N. 10, Apartado 21, 2686-953 Sacavém (Portugal)

    2014-07-15

    Thin films based on Cu(In,Ga)Se{sub 2} are used as absorber cells in photovoltaic devices. In and Ga graded depth profiles are designed to optimize the solar cell performance. Simultaneous Rutherford Backscattering Spectrometry (RBS) and Particle Induced X-ray Emission (PIXE) with 3 MeV {sup 4}He ions were used in conjunction to determine the depth profile of all the heavy elements in Cu(In,Ga)Se{sub 2} absorbers and complete solar cells. The RBS and PIXE data from one sample were analyzed synergistically, providing reliable depth profiles that satisfy all the data collected. An uncertainty analysis was done, probing the sensitivity of the analysis to different assumptions. The analytical possibilities of the combined RBS/PIXE alpha beam measurements of the CIGSe thin film solar cells, as well as the uncertainties induced in the quantitative methodology are discussed and critically assessed.

  6. Thin solid-lubricant films in space

    Science.gov (United States)

    Roberts, E. W.

    Low-friction films of thickness as low as 1 micron, created through sputter-deposition of low shear strength materials, are required in spacecraft applications requiring low power dissipation, such as cryogenic devices, and low torque noise, such as precision-pointing mechanisms. Due to their thinness, these coatings can be applied to high precision-machined tribological components without compromising their functional accuracy. Attention is here given to the cases of thin solid films for ball bearings, gears, and journal bearings.

  7. Studies in thin film flows

    CERN Document Server

    McKinley, I S

    2000-01-01

    the general case of non-zero capillary number numerically. Using the lubrication approximation to the Navier-Stokes equations we investigate the evolution and stability of a thin film of incompressible Newtonian fluid on a planar substrate subjected to a jet of air blowing normally to the substrate. For the simple model of the air jet we adopt, the initially axisymmetric problems we study are identical to those of a drop spreading on a turntable rotating at constant angular velocity (the simplest model for spin coating). We consider both drops without a dry patch (referred to as 'non-annular') and drops with a dry patch at their centre (referred to as 'annular'). First, both symmetric two-dimensional and axisymmetric three-dimensional drops are considered in the quasi-static limit of small capillary number. The evolution of both non-annular and annular drops and the stability of equilibrium solutions to small perturbations with zero wavenumber are determined. Using a specially developed finite-difference code...

  8. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  9. Characterization of fully functional spray-on antibody thin films

    Energy Technology Data Exchange (ETDEWEB)

    Figueroa, Jhon [Department of Chemistry, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-5250 (United States); Magaña, Sonia; Lim, Daniel V. [Department of Cell Biology, Microbiology and Molecular Biology, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-7115 (United States); Schlaf, Rudy, E-mail: schlaf@eng.usf.edu [Department of Electrical Engineering, University of South Florida, 4202 E. Fowler Ave., Tampa, FL 33620-5101 (United States)

    2014-02-15

    The authors recently demonstrated that fully functional Escherichia coli O157:H7 antibody thin films can be prepared using a simple pneumatic nebulizer on glass surface [1]. This paper focuses on the investigation of the morphology and physical properties of these films with the aim to better understand their performance. A series of E. coli O157:H7 antibody spray-on thin films were investigated by ellipsometry, X-ray photoelectron spectroscopy (XPS), immunoassays, attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), fluorescence microscopy, atomic force microscope (AFM) and contact angle analysis. These data were compared to measurements on films prepared with the biotin–avidin covalent bonding scheme. The investigation showed that films created by a 2 min pneumatic spray deposition time can capture antigens similar as the avidin–biotin wet-chemical method. The results also suggests that an influential factor for the comparable capture cell ability between sprayed and covalent films is an increased antibody surface coverage for the sprayed films (non-equilibrium technique), which compensates for the lack of its antibody orientation. There was no significant antibody denaturation detected on any of the sprayed films. Both techniques led to the formation of cluster-aggregates, a factor that seems unavoidable due to the natural tendency of protein to cluster. The avidin–biotin bridge films generally had a higher roughness, which manifested itself in a higher wettability compared to the sprayed films.

  10. Matrix-assisted pulsed laser evaporation of polyimide thin films and the XPS study

    Institute of Scientific and Technical Information of China (English)

    WANG Wei; LI ChengXiang; ZHANG GuoBin; SHENG LiuSi

    2008-01-01

    Compared with the traditional thin film techniques, the matrix-assisted pulsed laser evaporation (MAPLE) technique has many advantages in the deposition of polymer and organic thin films. It has a wide range of applications in many fields, such as non-linear optics, luminescent devices, electronics, various sensors. We have successfully deposited polyimide thin films by using the MAPLE technique. These films were characterized with XPS. The XPS spectra showed that the single-photon effect is obvious at low laser fluence and the chemical bonds will be broken, resulting in decomposition of the films. Contrarily, the single-photon effect will decrease and the multi-photon effect and the photothermal effect will increase at high laser fluence, resulting in the protection of the structure of the polyimide thin films and the obvious decrease in decomposition. High laser fluence is more suitable for the deposition of polymer and organic thin films than low laser fluence.

  11. Matrix-assisted pulsed laser evaporation of polyimide thin films and the XPS study

    Institute of Scientific and Technical Information of China (English)

    2008-01-01

    Compared with the traditional thin film techniques, the matrix-assisted pulsed laser evaporation (MAPLE) technique has many advantages in the deposition of polymer and organic thin films. It has a wide range of applications in many fields, such as non-linear optics, luminescent devices, electronics, various sensors. We have successfully deposited polyimide thin films by using the MAPLE technique. These films were characterized with XPS. The XPS spectra showed that the single-photon effect is ob-vious at low laser fluence and the chemical bonds will be broken, resulting in decomposition of the films. Contrarily, the single-photon effect will decrease and the multi-photon effect and the photothermal effect will increase at high laser fluence, resulting in the protection of the structure of the polyimide thin films and the obvious decrease in decomposition. High laser fluence is more suitable for the deposition of polymer and organic thin films than low laser fluence.

  12. Carbon Nanotube Thin-Film Antennas.

    Science.gov (United States)

    Puchades, Ivan; Rossi, Jamie E; Cress, Cory D; Naglich, Eric; Landi, Brian J

    2016-08-17

    Multiwalled carbon nanotube (MWCNT) and single-walled carbon nanotube (SWCNT) dipole antennas have been successfully designed, fabricated, and tested. Antennas of varying lengths were fabricated using flexible bulk MWCNT sheet material and evaluated to confirm the validity of a full-wave antenna design equation. The ∼20× improvement in electrical conductivity provided by chemically doped SWCNT thin films over MWCNT sheets presents an opportunity for the fabrication of thin-film antennas, leading to potentially simplified system integration and optical transparency. The resonance characteristics of a fabricated chlorosulfonic acid-doped SWCNT thin-film antenna demonstrate the feasibility of the technology and indicate that when the sheet resistance of the thin film is >40 ohm/sq no power is absorbed by the antenna and that a sheet resistance of antenna. The dependence of the return loss performance on the SWCNT sheet resistance is consistent with unbalanced metal, metal oxide, and other CNT-based thin-film antennas, and it provides a framework for which other thin-film antennas can be designed.

  13. Characterization of Sucrose Thin Films for Biomedical Applications

    Directory of Open Access Journals (Sweden)

    S. L. Iconaru

    2011-01-01

    Full Text Available Sucrose is a natural osmolyte accumulated in the cells of organisms as they adapt to environmental stress. In vitro sucrose increases protein stability and forces partially unfolded structures to refold. Thin films of sucrose (C12H22O11 were deposited on thin cut glass substrates by the thermal evaporation technique (P∼10−5 torr. Characteristics of thin films were put into evidence by Fourier Transform Infrared Spectroscopy (FTIR, X-ray Photoelectron Spectroscopy (XPS, scanning electron microscopy (SEM, and differential thermal analysis and thermal gravimetric analysis (TG/DTA. The experimental results confirm a uniform deposition of an adherent layer. In this paper we present a part of the characteristics of sucrose thin films deposited on glass in medium vacuum conditions, as a part of a culture medium for osteoblast cells. Osteoblast cells were used to determine proliferation, viability, and cytotoxicity interactions with sucrose powder and sucrose thin films. The osteoblast cells have been provided from the American Type Culture Collection (ATCC Centre. The outcome of this study demonstrated the effectiveness of sucrose thin films as a possible nontoxic agent for biomedical applications.

  14. Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

    Science.gov (United States)

    Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

    2017-05-01

    Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

  15. Controlled nanostructuration of polycrystalline tungsten thin films

    Energy Technology Data Exchange (ETDEWEB)

    Girault, B. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Institut de Recherche en Genie Civil et Mecanique (UMR CNRS 6183), LUNAM Universite, Universite de Nantes, Centrale Nantes, CRTT, 37 Bd de l' Universite, BP 406, 44602 Saint-Nazaire Cedex (France); Eyidi, D.; Goudeau, P.; Guerin, P.; Bourhis, E. Le; Renault, P.-O. [Institut P' (UPR 3346 CNRS), Universite de Poitiers, ENSMA, Bd Pierre et Marie Curie, 86962 Futuroscope Cedex (France); Sauvage, T. [CEMHTI/CNRS (UPR 3079 CNRS), Universite d' Orleans, 3A rue de la Ferollerie, 45071 Orleans Cedex 2 (France)

    2013-05-07

    Nanostructured tungsten thin films have been obtained by ion beam sputtering technique stopping periodically the growing. The total thickness was maintained constant while nanostructure control was obtained using different stopping periods in order to induce film stratification. The effect of tungsten sublayers' thicknesses on film composition, residual stresses, and crystalline texture evolution has been established. Our study reveals that tungsten crystallizes in both stable {alpha}- and metastable {beta}-phases and that volume proportions evolve with deposited sublayers' thicknesses. {alpha}-W phase shows original fiber texture development with two major preferential crystallographic orientations, namely, {alpha}-W<110> and unexpectedly {alpha}-W<111> texture components. The partial pressure of oxygen and presence of carbon have been identified as critical parameters for the growth of metastable {beta}-W phase. Moreover, the texture development of {alpha}-W phase with two texture components is shown to be the result of a competition between crystallographic planes energy minimization and crystallographic orientation channeling effect maximization. Controlled grain size can be achieved for the {alpha}-W phase structure over 3 nm stratification step. Below, the {beta}-W phase structure becomes predominant.

  16. Optical properties of nanostructured InSe thin films

    Science.gov (United States)

    El-Nahass, M. M.; Saleh, Abdul-Basit A.; Darwish, A. A. A.; Bahlol, M. H.

    2012-03-01

    Thin films of InSe were prepared by thermal evaporation technique. The as-deposited films have nano-scale crystalline nature and the annealing enhanced the degree of crystallinity. The optical properties of nanocrystalline thin films of InSe were studied using spectrophotometric measurements of transmittance, T, and reflectance, R, at normal incidence of light in the wavelength range 200-2500 nm. The optical constants (refractive index, n, and absorption index, k) were calculated using a computer program based on Murmann's exact equations. The calculated optical constants are independent of the film thickness. The optical dispersion parameters have been analysed by single oscillator model. The type of transition in InSe films is indirect allowed with a value of energy gap equals to 1.10 eV, which increased to 1.23 eV upon annealing.

  17. A thin-film magnetoresistive angle detector

    NARCIS (Netherlands)

    Eijkel, Kees J.M.; Wieberdink, Johan W.; Fluitman, Jan H.J; Popma, Theo J.A.; Groot, Peter; Leeuwis, Henk

    1990-01-01

    An overview is given of the results of our research on a contactless angle detector based on the anisotropic magnetoresistance effect (AMR effect) in a permalloy thin film. The results of high-temperature annealing treatment of the pemalloy film are discussed. Such a treatment suppresses the effects

  18. Adhesion and friction of thin metal films

    Science.gov (United States)

    Buckley, D. H.

    1976-01-01

    Sliding friction experiments were conducted in vacuum with thin films of titanium, chromium, iron, and platinum sputter deposited on quartz or mica substrates. A single crystal hemispherically tipped gold slider was used in contact with the films at loads of 1.0 to 30.0 and at a sliding velocity of 0.7 mm/min at 23 C. Test results indicate that the friction coefficient is dependent on the adhesion of two interfaces, that between the film and its substrate and the slider and the film. There exists a relationship between the percent d bond character of metals in bulk and in thin film form and the friction coefficient. Oxygen can increase adhesive bonding of a metal film (platinum) to a substrate.

  19. Thin Films for Coating Nanomaterials

    Institute of Scientific and Technical Information of China (English)

    S.M.Mukhopadhyay; P.Joshi; R.V.Pulikollu

    2005-01-01

    For nano-structured solids (those with one or more dimensions in the 1-100 nm range), attempts of surface modification can pose significant and new challenges. In traditional materials, the surface coating could be several hundreds nanometers in thickness, or even microns and millimeters. In a nano-structured material, such as particle or nanofibers, the coating thickness has to be substantially smaller than the bulk dimensions (100 nm or less), yet be durable and effective. In this paper, some aspects of effective nanometer scale coatings have been discussed. These films have been deposited by a non-line of sight (plasma)techniques; and therefore, they are capable of modifying nanofibers, near net shape cellular foams, and other high porosity materials. Two types of coatings will be focused upon: (a) those that make the surface inert and (b) those designed to enhance surface reactivity and bonding. The former has been achieved by forming 1-2 nm layer of -CF2- (and/or CF3) groups on the surface, and the latter by creating a nanolayer of SiO2-type compound. Nucleation and growth studies of the plasma-generated film indicate that they start forming as 2-3 nm high islands that grow laterally, and eventually completely cover the surface with 2-3nm film. Contact angle measurements indicate that these nano-coatings are fully functional even before they have achieved complete coverage of 2-3 nm. They should therefore be applicable to nano-structural solids.This is corroborated by application of these films on vapor grown nanofibers of carbon, and on graphitic foams. Coated and uncoated materials are infiltrated with epoxy matrix to form composites and their microstructure, as well as mechanical behaviors are compared. The results show that the nano-oxide coating can significantly enhance bond formation between carbon and organic phases, thereby enhancing wettability,dispersion, and composite behavior. The fluorocarbon coating, as expected, reduces bond formation, and

  20. Versatile solution for growing thin films of conducting polymers.

    Science.gov (United States)

    D'Arcy, Julio M; Tran, Henry D; Tung, Vincent C; Tucker-Schwartz, Alexander K; Wong, Rain P; Yang, Yang; Kaner, Richard B

    2010-11-16

    The method employed for depositing nanostructures of conducting polymers dictates potential uses in a variety of applications such as organic solar cells, light-emitting diodes, electrochromics, and sensors. A simple and scalable film fabrication technique that allows reproducible control of thickness, and morphological homogeneity at the nanoscale, is an attractive option for industrial applications. Here we demonstrate that under the proper conditions of volume, doping, and polymer concentration, films consisting of monolayers of conducting polymer nanofibers such as polyaniline, polythiophene, and poly(3-hexylthiophene) can be produced in a matter of seconds. A thermodynamically driven solution-based process leads to the growth of transparent thin films of interfacially adsorbed nanofibers. High quality transparent thin films are deposited at ambient conditions on virtually any substrate. This inexpensive process uses solutions that are recyclable and affords a new technique in the field of conducting polymers for coating large substrate areas.

  1. Evaluation of therapeutic pulmonary surfactants by thin liquid film methods.

    Science.gov (United States)

    Todorov, Roumen; Exerowa, Dotchi; Platikanov, Dimo; Bianco, Federico; Razzetti, Roberta

    2015-08-01

    An example of the application of the Black Foam Film (BFF) Method and the Wetting Film Method, using the Microinterferomertric and the Pressure Balance Techniques, for characterization interfacial properties of the animal derived therapeutic pulmonary surfactant preparations (TSP), is presented. BFF thickness, probability of black film formation, and disjoining pressure for foam films from TSP aqueous solutions are measured as well as the wetting properties of TSP solutions on solid surfaces with different hydrophobicity have been studied. Interfacial characteristics such as minimal surfactant concentration to obtain black film (critical concentration) and concentration at which a black film is 100% obtained (threshold concentration) are determined. An evaluation of the four widely used TSP – Curosurf, Infasurf, Survanta, and Alveofact – by these methods has been carried out. Thus the methods of the thin liquid films are useful tools for studying the interfacial properties of TSP solutions, as well as for their improvement.

  2. Nanomechanical Behavior of High Gas Barrier Multilayer Thin Films.

    Science.gov (United States)

    Humood, Mohammad; Chowdhury, Shahla; Song, Yixuan; Tzeng, Ping; Grunlan, Jaime C; Polycarpou, Andreas A

    2016-05-04

    Nanoindentation and nanoscratch experiments were performed on thin multilayer films manufactured using the layer-by-layer (LbL) assembly technique. These films are known to exhibit high gas barrier, but little is known about their durability, which is an important feature for various packaging applications (e.g., food and electronics). Films were prepared from bilayer and quadlayer sequences, with varying thickness and composition. In an effort to evaluate multilayer thin film surface and mechanical properties, and their resistance to failure and wear, a comprehensive range of experiments were conducted: low and high load indentation, low and high load scratch. Some of the thin films were found to have exceptional mechanical behavior and exhibit excellent scratch resistance. Specifically, nanobrick wall structures, comprising montmorillonite (MMT) clay and polyethylenimine (PEI) bilayers, are the most durable coatings. PEI/MMT films exhibit high hardness, large elastic modulus, high elastic recovery, low friction, low scratch depth, and a smooth surface. When combined with the low oxygen permeability and high optical transmission of these thin films, these excellent mechanical properties make them good candidates for hard coating surface-sensitive substrates, where polymers are required to sustain long-term surface aesthetics and quality.

  3. InSb thin films grown by electrodeposition

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Joginder, E-mail: joginderchauhan82@gmail.com; Rajaram, P., E-mail: joginderchauhan82@gmail.com [School of Studies in Physics, Jiwaji University, Gwalior-474011 (India)

    2014-04-24

    We have grown InSb thin films on Cu substrates using the electrodeposition technique. The electrochemical bath from which the InSb thin films were grown was made up of a mixture of aqueous solutions of 0.05 M InCl{sub 3} and 0.03M SbCl{sub 3}, 0 .20M citric acid and 0.30M sodium citrate. Citric acid and sodium citrate were used as complexing agents to bring the reduction potential of In and Sb closer to maintain binary growth. The electrodeposited films were characterized by structural, morphological and optical studies. X-ray diffraction studies show that the films are polycrystalline InSb having the zinc blende structure. Scanning electron microscopy (SEM) studies reveal that the surface of the films is uniformly covered with submicron sized spherical particles. FTIR spectra of InSb thin films show a sharp absorption peak at wave number 1022 cm{sup −1} corresponding to the band gap. Hot probe analysis shows that the InSb thin films have p type conductivity.

  4. Properties of pulsed laser deposited NiO/MWCNT thin films

    CSIR Research Space (South Africa)

    Yalisi, B

    2011-05-01

    Full Text Available Pulsed laser deposition (PLD) is a thin-film deposition technique, which uses short and intensive laser pulses to evaporate target material. The technique has been used in this work to produce selective solar absorber (SSA) thin film composites...

  5. Flexible Thin Metal Film Thermal Sensing System

    Science.gov (United States)

    Thomsen, Donald Laurence (Inventor)

    2012-01-01

    A flexible thin metal film thermal sensing system is provided. A thermally-conductive film made from a thermally-insulating material is doped with thermally-conductive material. At least one layer of electrically-conductive metal is deposited directly onto a surface of the thermally-conductive film. One or more devices are coupled to the layer(s) to measure an electrical characteristic associated therewith as an indication of temperature.

  6. Synthesis, Characterization, and Electrochemical Properties of Polyaniline Thin Films

    Science.gov (United States)

    Rami, Soukaina

    Conjugated polymers have been used in various applications (battery, supercapacitor, electromagnetic shielding, chemical sensor, biosensor, nanocomposite, light-emitting-diode, electrochromic display etc.) due to their excellent conductivity, electrochemical and optical properties, and low cost. Polyaniline has attracted the researchers from all disciplines of science, engineering, and industry due to its redox properties, environmental stability, conductivity, and optical properties. Moreover, it is a polymer with fast electroactive switching and reversible properties displayed at low potential, which is an important feature in many applications. The thin oriented polyaniline films have been fabricated using self-assembly, Langmuir-Blodgett, in-situ self-assembly, layer-by-layer, and electrochemical technique. The focus of this thesis is to synthesize and characterize polyaniline thin films with and without dyes. Also, the purpose of this thesis is to find the fastest electroactive switching PANI electrode in different electrolytic medium by studying their electrochemical properties. These films were fabricated using two deposition techniques: in-situ self-assembly and electrochemical deposition. The characterization of these films was done using techniques such as Fourier Transform Infrared Spectroscopy (FTIR), UV-spectroscopy, Scanning Electron Microscope (SEM), and X-Ray Diffraction (XRD). FTIR and UV-spectroscopy showed similar results in the structure of the polyaniline films. However, for the dye incorporated films, since there was an addition in the synthesis of the material, peak locations shifted, and new peaks corresponding to these materials appeared. The 1 layer PANI showed compact film morphology, comparing to other PANI films, which displayed a fiber-like structure. Finally, the electrochemical properties of these thin films were studied using cyclic voltammetry (CV), chronoamperometry (CA), and electrochemical impedance spectroscopy (EIS) in

  7. Characterization of as-grown and Ge-ion implanted CuGaSe{sub 2} thin films prepared by the CCSVT technique

    Energy Technology Data Exchange (ETDEWEB)

    Doka Yamigno, Serge

    2006-08-15

    Single phase polycrystalline thin films of CuGaSe{sub 2} in the compositional range of 1.0=[Ga]/[Cu]=1.3, corresponding to a thickness ranging from 1.6 {mu}m to 1.9 {mu}m deposited onto plain or Mo-coated soda lime glass (SLG) were prepared and found to be polycrystalline with a strongly preferred <221> orientation. A combination of microstructural investigations of the films by TEM, EDX within the TEM and ERDA measurements has shown that CuGaSe{sub 2} thin films possess high crystalline bulk quality with Cu, Ga and Se homogeneously distributed within the CuGaSe{sub 2} bulk. One of the main result of this present work was found to be the accumulation of Ga in the region of the CuGaSe2/Mo interface and the dependence of the CuGaSe{sub 2} surface composition on the integral [Ga]/[Cu] ratio in the film, namely Ga- and Cu-poor, Se-rich surface for stoichiometric films; and Cu- poor, and Ga- and Se- rich surface for increasing [Ga]/[Cu] ratios. These observations were also supported by optical measurements carried out through photoluminescence and absorption measurements. In order to gain a better understanding of the influence of the extrinsic doping of the CuGaSe{sub 2} films and why many attempts towards the type inversion in the p-type CuGaSe2 compounds by varying the composition or by doping with extrinsic defects have failed, ion implantation was used to introduce Ge into CuGaSe{sub 2}. Photoluminescence of the Ge containing films has evidenced the presence of new defects such as donor levels in the band gap. Electron spin resonance measurements of the Ge- containing CuGaSe2 films has highlighted an additional ESR resonance observed at g=2.003 ascribed to donors. However, Curie paramagnetism up to room temperature for all the Ge implanted films, characteristic of localized states has been observed for this resonance. (orig.)

  8. Characterization and Electrical Properties of TiO2 Thin Films Deposited by Pulsed Laser Deposition

    Science.gov (United States)

    Badar, Nurhanna; Kamarulzaman, Norlida

    2011-12-01

    Thin film technology is very important in today's high-tech industry. TiO2 is a high-k dielectric material. Problems with thin film deposition arise when the thickness of the thin layers approaches a few hundred nm to less than 100 nm. High quality thin films within these dimensions are difficult to obtain. Issues of adhesion, crystal mismatch, crystal orientation, surface roughness, densification, etc. are problems that need to be addressed if good quality thin films for devices are to be fabricated. These factors have a relation with the thin film technique used. As an example, spin coating technique may be a cheaper technique but may not result in dense and very smooth surfaces. Pulsed LASER deposition (PLD) is a relatively newer method used in thin film fabrication. The advantages of PLD are, capability of very thin films being deposited on different types of substrates (up to monolayers), control of crystal orientation, capability of depositing materials with complex stoichiometry and ease of methodology with high throughput. This has industrial implications as a good method for thin film preparation. This work involves the deposition of TiO2 thin films using different deposition parameters and chamber environments.

  9. Thin Ice Films at Mineral Surfaces.

    Science.gov (United States)

    Yeşilbaş, Merve; Boily, Jean-François

    2016-07-21

    Ice films formed at mineral surfaces are of widespread occurrence in nature and are involved in numerous atmospheric and terrestrial processes. In this study, we studied thin ice films at surfaces of 19 synthetic and natural mineral samples of varied structure and composition. These thin films were formed by sublimation of thicker hexagonal ice overlayers mostly produced by freezing wet pastes of mineral particles at -10 and -50 °C. Vibration spectroscopy revealed that thin ice films contained smaller populations of strongly hydrogen-bonded water molecules than in hexagonal ice and liquid water. Thin ice films at the surfaces of the majority of minerals considered in this work [i.e., metal (oxy)(hydr)oxides, phyllosilicates, silicates, volcanic ash, Arizona Test Dust] produced intense O-H stretching bands at ∼3400 cm(-1), attenuated bands at ∼3200 cm(-1), and liquid-water-like bending band at ∼1640 cm(-1) irrespective of structure and composition. Illite, a nonexpandable phyllosilicate, is the only mineral that stabilized a form of ice that was strongly resilient to sublimation in temperatures as low as -50 °C. As mineral-bound thin ice films are the substrates upon which ice grows from water vapor or aqueous solutions, this study provides new constraints from which their natural occurrences can be understood.

  10. Magnetoelectric thin film composites with interdigital electrodes

    Science.gov (United States)

    Piorra, A.; Jahns, R.; Teliban, I.; Gugat, J. L.; Gerken, M.; Knöchel, R.; Quandt, E.

    2013-07-01

    Magnetoelectric (ME) thin film composites on silicon cantilevers are fabricated using Pb(Zr0.52Ti0.45)O3 (PZT) films with interdigital transducer electrodes on the top side and FeCoSiB amorphous magnetostrictive thin films on the backside. These composites without any direct interface between the piezoelectric and magnetostrictive phase are superior to conventional plate capacitor-type thin film ME composites. A limit of detection of 2.6 pT/Hz1/2 at the mechanical resonance is determined which corresponds to an improvement of a factor of approximately 2.8 compared to the best plate type sensor using AlN as the piezoelectric phase and even a factor of approximately 4 for a PZT plate capacitor.

  11. Study of the Thin Film Pulse Transformer

    Institute of Scientific and Technical Information of China (English)

    LIU Bao-yuan; SHI Yu; WEN Qi-ye

    2005-01-01

    A new thin film pulse transformer for using in ISND and model systems is fabricated by a mask sputtering process. This novel pulse transformer consists of four I-shaped CoZrRe nanometer crystal magnetic-film cores and a Cu thin film coil, deposited on the micro-crystal glass substrate directly. The thickness of thin film core is between 1 and 3 μm, and the area is between 4mm×6 mm and 12mm×6 mm. The coils provide a relatively high induce of 0.8 μm and can be well operated in a frequency range of 0.001~20 MHz.

  12. Tungsten-doped thin film materials

    Science.gov (United States)

    Xiang, Xiao-Dong; Chang, Hauyee; Gao, Chen; Takeuchi, Ichiro; Schultz, Peter G.

    2003-12-09

    A dielectric thin film material for high frequency use, including use as a capacitor, and having a low dielectric loss factor is provided, the film comprising a composition of tungsten-doped barium strontium titanate of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3, where X is between about 0.5 and about 1.0. Also provided is a method for making a dielectric thin film of the general formula (Ba.sub.x Sr.sub.1-x)TiO.sub.3 and doped with W, where X is between about 0.5 and about 1.0, a substrate is provided, TiO.sub.2, the W dopant, Ba, and optionally Sr are deposited on the substrate, and the substrate containing TiO.sub.2, the W dopant, Ba, and optionally Sr is heated to form a low loss dielectric thin film.

  13. Development of Dual-light Path Monitoring System of Optical Thin-film Thickness

    Institute of Scientific and Technical Information of China (English)

    XU Shi-jun

    2005-01-01

    The accurate monitoring of optical thin-film thickness is a key technique for depositing optical thin-film. For existing coating equipments, which are low precision and automation level on monitoring thin-film thickness, a new photoelectric control and analysis system has been developed. In the new system, main techniques include a photoelectric system with dual-light path, a dual-lock-phase circuit system and a comprehensive digital processing-control-analysis system.The test results of new system show that the static and dynamic stabilities and the control precision of thin-film thickness are extremely increased. The standard deviation of thin-film thickness, which indicates the duplication of thin-film thickness monitoring, is equal to or less than 0.72%. The display resolution limit on reflectivity is 0.02 %. In the system, the linearity of drift is very high, and the static drift ratio approaches zero.

  14. Polycaprolactone thin films for retinal tissue engineering and drug delivery

    Science.gov (United States)

    Steedman, Mark Rory

    This dissertation focuses on the development of polycaprolactone thin films for retinal tissue engineering and drug delivery. We combined these thin films with techniques such as micro and nanofabrication to develop treatments for age-related macular degeneration (AMD), a disease that leads to the death of rod and cone photoreceptors. Current treatments are only able to slow or limit the progression of the disease, and photoreceptors cannot be regenerated or replaced by the body once lost. The first experiments presented focus on a potential treatment for AMD after photoreceptor death has occurred. We developed a polymer thin film scaffold technology to deliver retinal progenitor cells (RPCs) to the affected area of the eye. Earlier research showed that RPCs destined to become photoreceptors are capable of incorporating into a degenerated retina. In our experiments, we showed that RPC attachment to a micro-welled polycaprolactone (PCL) thin film surface enhanced the differentiation of these cells toward a photoreceptor fate. We then used our PCL thin films to develop a drug delivery device capable of sustained therapeutic release over a multi-month period that would maintain an effective concentration of the drug in the eye and eliminate the need for repeated intraocular injections. We first investigated the biocompatibility of PCL in the rabbit eye. We injected PCL thin films into the anterior chamber or vitreous cavity of rabbit eyes and monitored the animals for up to 6 months. We found that PCL thin films were well tolerated in the rabbit eye, showing no signs of chronic inflammation due to the implant. We then developed a multilayered thin film device containing a microporous membrane. We loaded these devices with lyophilized proteins and quantified drug elution for 10 weeks, finding that both bovine serum albumin and immunoglobulin G elute from these devices with zero order release kinetics. These experiments demonstrate that PCL is an extremely useful

  15. MOF thin films: existing and future applications.

    Science.gov (United States)

    Shekhah, O; Liu, J; Fischer, R A; Wöll, Ch

    2011-02-01

    The applications and potentials of thin film coatings of metal-organic frameworks (MOFs) supported on various substrates are discussed in this critical review. Because the demand for fabricating such porous coatings is rather obvious, in the past years several synthesis schemes have been developed for the preparation of thin porous MOF films. Interestingly, although this is an emerging field seeing a rapid development a number of different applications on MOF films were either already demonstrated or have been proposed. This review focuses on the fabrication of continuous, thin porous films, either supported on solid substrates or as free-standing membranes. The availability of such two-dimensional types of porous coatings opened the door for a number of new perspectives for functionalizing surfaces. Also for the porous materials themselves, the availability of a solid support to which the MOF-films are rigidly (in a mechanical sense) anchored provides access to applications not available for the typical MOF powders with particle sizes of a few μm. We will also address some of the potential and applications of thin films in different fields like luminescence, QCM-based sensors, optoelectronics, gas separation and catalysis. A separate chapter has been devoted to the delamination of MOF thin films and discusses the potential to use them as free-standing membranes or as nano-containers. The review also demonstrates the possibility of using MOF thin films as model systems for detailed studies on MOF-related phenomena, e.g. adsorption and diffusion of small molecules into MOFs as well as the formation mechanism of MOFs (101 references).

  16. A comparison study of Co and Cu doped MgO diluted magnetic thin films

    Science.gov (United States)

    Sarıtaş, S.; ćakıcı, T.; Muǧlu, G. Merhan; Kundakcı, M.; Yıldırım, M.

    2017-02-01

    Transition metal-doped MgO diluted magnetic thin films are appropriate candidates for spintronic applications and designing magnetic devices and sensors. Therefore, MgO:Co and MgO:Cu films were deposited on glass substrates by Chemical Spray Pyrolysis (CSP) method different thin film deposition parameters. Deposited different transition metal doped MgO thin films were compared in terms of optic and structural properties. C