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Sample records for surface mott insulators

  1. Self-energy behavior away from the Fermi surface in doped Mott insulators.

    Science.gov (United States)

    Merino, J; Gunnarsson, O; Kotliar, G

    2016-02-03

    We analyze self-energies of electrons away from the Fermi surface in doped Mott insulators using the dynamical cluster approximation to the Hubbard model. For large onsite repulsion, U, and hole doping, the magnitude of the self-energy for imaginary frequencies at the top of the band ([Formula: see text]) is enhanced with respect to the self-energy magnitude at the bottom of the band ([Formula: see text]). The self-energy behavior at these two [Formula: see text]-points is switched for electron doping. Although the hybridization is much larger for (0, 0) than for [Formula: see text], we demonstrate that this is not the origin of this difference. Isolated clusters under a downward shift of the chemical potential, [Formula: see text], at half-filling reproduce the overall self-energy behavior at (0, 0) and [Formula: see text] found in low hole doped embedded clusters. This happens although there is no change in the electronic structure of the isolated clusters. Our analysis shows that a downward shift of the chemical potential which weakly hole dopes the Mott insulator can lead to a large enhancement of the [Formula: see text] self-energy for imaginary frequencies which is not associated with electronic correlation effects, even in embedded clusters. Interpretations of the strength of electronic correlations based on self-energies for imaginary frequencies are, in general, misleading for states away from the Fermi surface.

  2. On effective holographic Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Baggioli, Matteo; Pujolàs, Oriol [Institut de Física d’Altes Energies (IFAE), Universitat Autònoma de Barcelona,The Barcelona Institute of Science and Technology,Campus UAB, 08193 Bellaterra (Barcelona) (Spain)

    2016-12-20

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  3. On effective holographic Mott insulators

    International Nuclear Information System (INIS)

    Baggioli, Matteo; Pujolàs, Oriol

    2016-01-01

    We present a class of holographic models that behave effectively as prototypes of Mott insulators — materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field dynamics contains self-interactions by way of a particular type of non-linear electrodynamics. The electrical response in these models exhibits typical features of Mott-like states: i) the low-temperature DC conductivity is unboundedly low; ii) metal-insulator transitions appear by varying various parameters; iii) for large enough self-interaction strength, the conductivity can even decrease with increasing doping (density of carriers) — which appears as a sharp manifestation of ‘traffic-jam’-like behaviour; iv) the insulating state becomes very unstable towards superconductivity at large enough doping. We exhibit some of the properties of the resulting insulator-superconductor transition, which is sensitive to the momentum dissipation rate in a specific way. These models imply a clear and generic correlation between Mott behaviour and significant effects in the nonlinear electrical response. We compute the nonlinear current-voltage curve in our model and find that indeed at large voltage the conductivity is largely reduced.

  4. Phase Separation in Doped Mott Insulators

    Directory of Open Access Journals (Sweden)

    Chuck-Hou Yee

    2015-04-01

    Full Text Available Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts that the transition is percolative and should exhibit Coulomb frustration.

  5. Mottness

    International Nuclear Information System (INIS)

    Phillips, Philip

    2006-01-01

    We review several of the normal state properties of the cuprates in an attempt to establish an organizing principle from which pseudogap phenomena, broad spectral features, T-linear resistivity, and spectral weight transfer emerge. We first show that standard field theories with a single critical length scale cannot capture the T-linear resistivity as long as the charge carriers are critical. What seems to be missing is an additional length scale, which may or may not be critical. Second, we prove a generalised version of Luttinger's theorem for a Mott insulator. In particular, we show that for Mott insulators, regardless of the spatial dimension, the Fermi surface of the non-interacting system is converted into a surface of zeros of the single-particle Green function when the underlying band structure has particle-hole symmetry. Only in the presence of particle-hole symmetry does the volume of the surface of zeros equal the particle density. The surface of zeros persists at finite doping and is shown to provide a framework from which pseudogaps, broad spectral features, spectral weight transfer on the Mott gap scale, and the additional length scale required to capture T-linear resistivity can be understood

  6. Coherence and correlations in a Mott insulator

    International Nuclear Information System (INIS)

    Gerbier, F.; Widera, A.; Foelling, S.; Mandel, O.; Gericke, T.; Bloch, I.

    2005-01-01

    The observation of the super fluid to Mott insulator transition has triggered an intense interest in studying ultracold quantum gases in optical lattices. Such a transition is commonly associated with the disappearance of the interference pattern observed when releasing a coherent (i.e. Bose condensed) ensemble from the lattice. In this talk, I will show that even in the insulating phase, the visibility of this interference pattern remains finite. Our results show that although long-range order is absent, short-range coherence still persists in a rather broad range, and that this can be identified as a characteristic feature of the system for large, but finite lattice depths. For even deeper lattices, the visibility is close to zero, and the interference pattern unobservable. I will explain that information is still present in such featureless images, and can be extracted by studying the density-density correlation function of the expanded cloud, as proposed theoretically. A sharp diffraction-like pattern observed in the correlations reveals the underlying lattice structure, and can be understood by generalizing the well-known Hanbury-Brown and Twiss effect to many bosonic sources '' emitting '' from each lattice site. This new detection method allows in principle the detection of spin ordering in a multi-component Mott insulator. As a first step in this direction, we have recently observed spin dynamics in a Mott insulator, where a spin-dependent collisional coupling induces strongly under damped Rabi oscillations between two-particle states with the same total magnetization. I will briefly report on these results. (author)

  7. Thermally assisted ordering in Mott insulators

    Science.gov (United States)

    Sims, Hunter; Pavarini, Eva; Koch, Erik

    2017-08-01

    Landau theory describes phase transitions as the competition between energy and entropy: The ordered phase has lower energy, while the disordered phase has larger entropy. When heating the system, ordering is reduced entropically until it vanishes at the critical temperature. This picture implicitly assumes that the energy difference between the ordered and disordered phases does not change with temperature. We show that for orbital ordering in the Mott insulator KCuF3, this assumption fails qualitatively: entropy plays a negligible role, while thermal expansion energetically stabilizes the orbitally ordered phase to such an extent that no phase transition is observed. To understand this strong dependence on the lattice constant, we need to take into account the Born-Mayer repulsion between the ions. It is the latter, and not the Jahn-Teller elastic energy, which determines the magnitude of the distortion. This effect will be seen in all materials where the distortion expected from the Jahn-Teller mechanism is so large that the ions would touch. Our mechanism explains not only the absence of a phase transition in KCuF3, but even suggests the possibility of an inverted transition in closed-shell systems, where the ordered phase emerges only at high temperatures.

  8. Single-spin addressing in an atomic Mott insulator

    DEFF Research Database (Denmark)

    Weitenberg, Christof; Endres, Manuel; Sherson, Jacob

    2011-01-01

    directly monitored the tunnelling quantum dynamics of single atoms in the lattice prepared along a single line, and observed that our addressing scheme leaves the atoms in the motional ground state. The results should enable studies of entropy transport and the quantum dynamics of spin impurities...... and quantum spin dynamics. Here we demonstrate how such control can be implemented at the most fundamental level of a single spin at a specific site of an optical lattice. Using a tightly focused laser beam together with a microwave field, we were able to flip the spin of individual atoms in a Mott insulator...... with sub-diffraction-limited resolution, well below the lattice spacing. The Mott insulator provided us with a large two-dimensional array of perfectly arranged atoms, in which we created arbitrary spin patterns by sequentially addressing selected lattice sites after freezing out the atom distribution. We...

  9. Charge dynamics of the antiferromagnetically ordered Mott insulator

    Science.gov (United States)

    Han, Xing-Jie; Liu, Yu; Liu, Zhi-Yuan; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xie, Zhi-Yuan; Normand, B.; Xiang, Tao

    2016-10-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon-doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon-doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott-Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of the

  10. Charge dynamics of the antiferromagnetically ordered Mott insulator

    International Nuclear Information System (INIS)

    Han, Xing-Jie; Li, Xin; Chen, Jing; Liao, Hai-Jun; Xiang, Tao; Liu, Yu; Liu, Zhi-Yuan; Xie, Zhi-Yuan; Normand, B

    2016-01-01

    We introduce a slave-fermion formulation in which to study the charge dynamics of the half-filled Hubbard model on the square lattice. In this description, the charge degrees of freedom are represented by fermionic holons and doublons and the Mott-insulating characteristics of the ground state are the consequence of holon–doublon bound-state formation. The bosonic spin degrees of freedom are described by the antiferromagnetic Heisenberg model, yielding long-ranged (Néel) magnetic order at zero temperature. Within this framework and in the self-consistent Born approximation, we perform systematic calculations of the average double occupancy, the electronic density of states, the spectral function and the optical conductivity. Qualitatively, our method reproduces the lower and upper Hubbard bands, the spectral-weight transfer into a coherent quasiparticle band at their lower edges and the renormalisation of the Mott gap, which is associated with holon–doublon binding, due to the interactions of both quasiparticle species with the magnons. The zeros of the Green function at the chemical potential give the Luttinger volume, the poles of the self-energy reflect the underlying quasiparticle dispersion with a spin-renormalised hopping parameter and the optical gap is directly related to the Mott gap. Quantitatively, the square-lattice Hubbard model is one of the best-characterised problems in correlated condensed matter and many numerical calculations, all with different strengths and weaknesses, exist with which to benchmark our approach. From the semi-quantitative accuracy of our results for all but the weakest interaction strengths, we conclude that a self-consistent treatment of the spin-fluctuation effects on the charge degrees of freedom captures all the essential physics of the antiferromagnetic Mott–Hubbard insulator. We remark in addition that an analytical approximation with these properties serves a vital function in developing a full understanding of

  11. Inhomogeneous field induced magnetoelectric effect in Mott insulators

    Energy Technology Data Exchange (ETDEWEB)

    Boulaevskii, Lev N [Los Alamos National Laboratory; Batista, Cristian D [Los Alamos National Laboratory

    2008-01-01

    We consider a Mott insulator like HoMnO{sub 3} whose magnetic lattice is geometrically frustrated and comprises a 3D array of triangular layers with magnetic moments ordered in a 120{sup o} structure. We show that the effect of a uniform magnetic field gradient, {gradient}H, is to redistribute the electronic charge of the magnetically ordered phase leading to a unfirom electric field gradient. The resulting voltage difference between the crystal edges is proportional to the square of the crystal thickness, or inter-edge distance, L. It can reach values of several volts for |{gradient}H| {approx} 0.01 T/cm and L {approx_equal} 1mm, as long as the crystal is free of antiferromagnetic domain walls.

  12. Realization of a Hole-Doped Mott Insulator on a Triangular Silicon Lattice

    Science.gov (United States)

    Ming, Fangfei; Johnston, Steve; Mulugeta, Daniel; Smith, Tyler S.; Vilmercati, Paolo; Lee, Geunseop; Maier, Thomas A.; Snijders, Paul C.; Weitering, Hanno H.

    2017-12-01

    The physics of doped Mott insulators is at the heart of some of the most exotic physical phenomena in materials research including insulator-metal transitions, colossal magnetoresistance, and high-temperature superconductivity in layered perovskite compounds. Advances in this field would greatly benefit from the availability of new material systems with a similar richness of physical phenomena but with fewer chemical and structural complications in comparison to oxides. Using scanning tunneling microscopy and spectroscopy, we show that such a system can be realized on a silicon platform. The adsorption of one-third monolayer of Sn atoms on a Si(111) surface produces a triangular surface lattice with half filled dangling bond orbitals. Modulation hole doping of these dangling bonds unveils clear hallmarks of Mott physics, such as spectral weight transfer and the formation of quasiparticle states at the Fermi level, well-defined Fermi contour segments, and a sharp singularity in the density of states. These observations are remarkably similar to those made in complex oxide materials, including high-temperature superconductors, but highly extraordinary within the realm of conventional s p -bonded semiconductor materials. It suggests that exotic quantum matter phases can be realized and engineered on silicon-based materials platforms.

  13. Raman Scattering as a Probe of the Magnetic State of BEDT-TTF Based Mott Insulators

    Directory of Open Access Journals (Sweden)

    Nora Hassan

    2018-05-01

    Full Text Available Quasi-two-dimensional Mott insulators based on BEDT-TTF molecules have recently demonstrated a variety of exotic states, which originate from electron–electron correlations and geometrical frustration of the lattice. Among those states are a triangular S = 1/2 spin liquid and quantum dipole liquid. In this article, we show the power of Raman scattering technique to characterize magnetic and electronic excitations of these states. Our results demonstrate a distinction between a spectrum of magnetic excitations in a simple Mott insulator with antiferromagnetic interactions, and a spectrum of an insulator with an additional on-site charge degree of freedom.

  14. Can disorder drive a Mott insulator into a metal in 2D?

    International Nuclear Information System (INIS)

    Trivedi, Nandini; Heidarian, Dariush

    2006-01-01

    We find that isoelectronic disorder generates novel phases in a Mott insulator at half filling. For both binary disorder potentials and for random site disorder models, the Mott gap is destroyed locally generating puddles of gapless excitations. With increasing disorder, these puddles grow and rather surprising, form an inhomogeneous metal in 2D. Antiferromagnetic long range order is more robust than the Mott gap and persists into the metal, getting destroyed close to a critical disorder where doubly occupied and empty sites percolate. (author)

  15. Dimensional crossover and cold-atom realization of gapless and semi-metallic Mott insulating phases

    Science.gov (United States)

    Orth, Peter P.; Scheurer, Mathias; Rachel, Stephan

    2014-03-01

    We propose a realistic cold-atom setup which allows for a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator phase by simply tuning the hopping between the layers. We further employ cluster slave-rotor mean-field theory to study the effect of additional Hubbard onsite interactions that give rise to various spin liquid-like phases such as gapless and semi-metallic Mott insulating states.

  16. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei

    2015-06-22

    Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.

  17. Single-atom-resolved fluorescence imaging of an atomic Mott insulator

    DEFF Research Database (Denmark)

    Sherson, Jacob; Weitenberg, Christof; Andres, Manuel

    2010-01-01

    in situ images of a quantum fluid in which each underlying quantum particle is detected. Here we report fluorescence imaging of strongly interacting bosonic Mott insulators in an optical lattice with single-atom and single-site resolution. From our images, we fully reconstruct the atom distribution...

  18. Site-resolved imaging of a bosonic Mott insulator using ytterbium atoms

    Science.gov (United States)

    Miranda, Martin; Inoue, Ryotaro; Tambo, Naoki; Kozuma, Mikio

    2017-10-01

    We demonstrate site-resolved imaging of a strongly correlated quantum system without relying on laser cooling techniques during fluorescence imaging. We observe the formation of Mott shells in the insulating regime and realize thermometry in an atomic cloud. This work proves the feasibility of the noncooled approach and opens the door to extending the detection technology to new atomic species.

  19. High pressure metallization of Mott Insulators: Magnetic, structural and electronic properties

    International Nuclear Information System (INIS)

    Pasternak, M.P.; Hearne, G.; Sterer, E.; Taylor, R.D.; Jeanloz, R.

    1993-01-01

    High pressure studies of the insulator-metal transition in the (TM)I 2 (TM = V, Fe, Co and Ni) compounds are described. Those divalent transition-metal iodides are structurally isomorphous and classified as Mott Insulators. Resistivity, X-ray diffraction and Moessbauer Spectroscopy were employed to investigate the electronic, structural, and magnetic properties as a function of pressure both on the highly correlated and on the metallic regimes

  20. Mott metal-insulator transition in the doped Hubbard-Holstein model

    Science.gov (United States)

    Kurdestany, Jamshid Moradi; Satpathy, S.

    2017-08-01

    Motivated by the current interest in the understanding of the Mott insulators away from half-filling, observed in many perovskite oxides, we study the Mott metal-insulator transition in the doped Hubbard-Holstein model using the Hartree-Fock mean field theory. The Hubbard-Holstein model is the simplest model containing both the Coulomb and the electron-lattice interactions, which are important ingredients in the physics of the perovskite oxides. In contrast to the half-filled Hubbard model, which always results in a single phase (either metallic or insulating), our results show that away from half-filling, a mixed phase of metallic and insulating regions occurs. As the dopant concentration is increased, the metallic part progressively grows in volume, until it exceeds the percolation threshold, leading to percolative conduction. This happens above a critical dopant concentration δc, which, depending on the strength of the electron-lattice interaction, can be a significant fraction of unity. This means that the material could be insulating even for a substantial amount of doping, in contrast to the expectation that doped holes would destroy the insulating behavior of the half-filled Hubbard model. While effects of fluctuation beyond the mean field remain an open question, our results provide a starting point for the understanding of the density-driven metal-insulator transition observed in many complex oxides.

  1. An Angle Resolved Photoemission Study of a Mott Insulator and Its Evolution to a High Temperature Superconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ronning, Filip

    2002-03-19

    One of the most remarkable facts about the high temperature superconductors is their close proximity to an antiferromagnetically ordered Mott insulating phase. This fact suggests that to understand superconductivity in the cuprates we must first understand the insulating regime. Due to material properties the technique of angle resolved photoemission is ideally suited to study the electronic structure in the cuprates. Thus, a natural starting place to unlocking the secrets of high Tc would appears to be with a photoemission investigation of insulating cuprates. This dissertation presents the results of precisely such a study. In particular, we have focused on the compound Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}. With increasing Na content this system goes from an antiferromagnetic Mott insulator with a Neel transition of 256K to a superconductor with an optimal transition temperature of 28K. At half filling we have found an asymmetry in the integrated spectral weight, which can be related to the occupation probability, n(k). This has led us to identify a d-wave-like dispersion in the insulator, which in turn implies that the high energy pseudogap as seen by photoemission is a remnant property of the insulator. These results are robust features of the insulator which we found in many different compounds and experimental conditions. By adding Na we were able to study the evolution of the electronic structure across the insulator to metal transition. We found that the chemical potential shifts as holes are doped into the system. This picture is in sharp contrast to the case of La{sub 2-x}Sr{sub x}CuO{sub 4} where the chemical potential remains fixed and states are created inside the gap. Furthermore, the low energy excitations (ie the Fermi surface) in metallic Ca{sub 1.9}Na{sub 0.1}CuO{sub 2}Cl{sub 2} is most well described as a Fermi arc, although the high binding energy features reveal the presence of shadow bands. Thus, the results in this dissertation provide a

  2. Wide gap Chern Mott insulating phases achieved by design

    Science.gov (United States)

    Guo, Hongli; Gangopadhyay, Shruba; Köksal, Okan; Pentcheva, Rossitza; Pickett, Warren E.

    2017-12-01

    Quantum anomalous Hall insulators, which display robust boundary charge and spin currents categorized in terms of a bulk topological invariant known as the Chern number (Thouless et al Phys. Rev. Lett. 49, 405-408 (1982)), provide the quantum Hall anomalous effect without an applied magnetic field. Chern insulators are attracting interest both as a novel electronic phase and for their novel and potentially useful boundary charge and spin currents. Honeycomb lattice systems such as we discuss here, occupied by heavy transition-metal ions, have been proposed as Chern insulators, but finding a concrete example has been challenging due to an assortment of broken symmetry phases that thwart the topological character. Building on accumulated knowledge of the behavior of the 3d series, we tune spin-orbit and interaction strength together with strain to design two Chern insulator systems with bandgaps up to 130 meV and Chern numbers C = -1 and C = 2. We find, in this class, that a trade-off between larger spin-orbit coupling and strong interactions leads to a larger gap, whereas the stronger spin-orbit coupling correlates with the larger magnitude of the Hall conductivity. Symmetry lowering in the course of structural relaxation hampers obtaining quantum anomalous Hall character, as pointed out previously; there is only mild structural symmetry breaking of the bilayer in these robust Chern phases. Recent growth of insulating, magnetic phases in closely related materials with this orientation supports the likelihood that synthesis and exploitation will follow.

  3. Non-volatile resistive switching in the Mott insulator (V1-xCrx)2O3

    Science.gov (United States)

    Querré, M.; Tranchant, J.; Corraze, B.; Cordier, S.; Bouquet, V.; Députier, S.; Guilloux-Viry, M.; Besland, M.-P.; Janod, E.; Cario, L.

    2018-05-01

    The discovery of non-volatile resistive switching in Mott insulators related to an electric-field-induced insulator to metal transition (IMT) has paved the way for their use in a new type of non-volatile memories, the Mott memories. While most of the previous studies were dedicated to uncover the resistive switching mechanism and explore the memory potential of chalcogenide Mott insulators, we present here a comprehensive study of resistive switching in the canonical oxide Mott insulator (V1-xCrx)2O3. Our work demonstrates that this compound undergoes a non-volatile resistive switching under electric field. This resistive switching is induced by a Mott transition at the local scale which creates metallic domains closely related to existing phases of the temperature-pressure phase diagram of (V1-xCrx)2O3. Our work demonstrates also reversible resistive switching in (V1-xCrx)2O3 crystals and thin film devices. Preliminary performances obtained on 880 nm thick layers with 500 nm electrodes show the strong potential of Mott memories based on the Mott insulator (V1-xCrx)2O3.

  4. Finite-temperature dynamics of the Mott insulating Hubbard chain

    Science.gov (United States)

    Nocera, Alberto; Essler, Fabian H. L.; Feiguin, Adrian E.

    2018-01-01

    We study the dynamical response of the half-filled one-dimensional Hubbard model for a range of interaction strengths U and temperatures T by a combination of numerical and analytical techniques. Using time-dependent density matrix renormalization group computations we find that the single-particle spectral function undergoes a crossover to a spin-incoherent Luttinger liquid regime at temperatures T ˜J =4 t2/U for sufficiently large U >4 t . At smaller values of U and elevated temperatures the spectral function is found to exhibit two thermally broadened bands of excitations, reminiscent of what is found in the Hubbard-I approximation. The dynamical density-density response function is shown to exhibit a finite-temperature resonance at low frequencies inside the Mott gap, with a physical origin similar to the Villain mode in gapped quantum spin chains. We complement our numerical computations by developing an analytic strong-coupling approach to the low-temperature dynamics in the spin-incoherent regime.

  5. Mott-insulating phases and magnetism of fermions in a double-well optical lattice

    International Nuclear Information System (INIS)

    Wang, Xin; Zhou, Qi; Das Sarma, S.

    2011-01-01

    We theoretically investigate, using nonperturbative strong correlation techniques, Mott-insulating phases and magnetic ordering of two-component fermions in a two-dimensional double-well optical lattice. At filling of two fermions per site, there are two types of Mott insulators, one of which is characterized by spin-1 antiferromagnetism below the Neel temperature. The superexchange interaction in this system is induced by the interplay between the interband interaction and the spin degree of freedom. A great advantage of the double-well optical lattice is that the magnetic quantum phase diagram and the Neel temperature can be easily controlled by tuning the orbital energy splitting of the two-level system. Particularly, the Neel temperature can be one order of magnitude larger than that in standard optical lattices, facilitating the experimental search for magnetic ordering in optical lattice systems.

  6. Antiferromagnetism and d-wave superconductivity in (doped) Mott insulators: A wave function approach

    OpenAIRE

    Weng, Z. Y.; Zhou, Y.; Muthukumar, V. N.

    2003-01-01

    We propose a class of wave functions that provide a unified description of antiferromagnetism and d-wave superconductivity in (doped) Mott insulators. The wave function has a Jastrow form and prohibits double occupancies. In the absence of holes, the wave function describes antiferromagnetism accurately. Off diagonal long range order develops at finite doping and the superconducting order parameter has d-wave symmetry. We also show how nodal quasiparticles and neutral spin excitations can be ...

  7. Electronic structure properties of UO2 as a Mott insulator

    Science.gov (United States)

    Sheykhi, Samira; Payami, Mahmoud

    2018-06-01

    In this work using the density functional theory (DFT), we have studied the structural, electronic and magnetic properties of uranium dioxide with antiferromagnetic 1k-, 2k-, and 3k-order structures. Ordinary approximations in DFT, such as the local density approximation (LDA) or generalized gradient approximation (GGA), usually predict incorrect metallic behaviors for this strongly correlated electron system. Using Hubbard term correction for f-electrons, LDA+U method, as well as using the screened Heyd-Scuseria-Ernzerhof (HSE) hybrid functional for the exchange-correlation (XC), we have obtained the correct ground-state behavior as an insulator, with band gaps in good agreement with experiment.

  8. Dimensional crossover and cold-atom realization of topological Mott insulators

    Science.gov (United States)

    Scheurer, Mathias S.; Rachel, Stephan; Orth, Peter P.

    2015-02-01

    Interacting cold-atomic gases in optical lattices offer an experimental approach to outstanding problems of many body physics. One important example is the interplay of interaction and topology which promises to generate a variety of exotic phases such as the fractionalized Chern insulator or the topological Mott insulator. Both theoretically understanding these states of matter and finding suitable systems that host them have proven to be challenging problems. Here we propose a cold-atom setup where Hubbard on-site interactions give rise to spin liquid-like phases: weak and strong topological Mott insulators. They represent the celebrated paradigm of an interacting and topological quantum state with fractionalized spinon excitations that inherit the topology of the non-interacting system. Our proposal shall help to pave the way for a controlled experimental investigation of this exotic state of matter in optical lattices. Furthermore, it allows for the investigation of a dimensional crossover from a two-dimensional quantum spin Hall insulating phase to a three-dimensional strong topological insulator by tuning the hopping between the layers.

  9. Prospect of quantum anomalous Hall and quantum spin Hall effect in doped kagome lattice Mott insulators.

    Science.gov (United States)

    Guterding, Daniel; Jeschke, Harald O; Valentí, Roser

    2016-05-17

    Electronic states with non-trivial topology host a number of novel phenomena with potential for revolutionizing information technology. The quantum anomalous Hall effect provides spin-polarized dissipation-free transport of electrons, while the quantum spin Hall effect in combination with superconductivity has been proposed as the basis for realizing decoherence-free quantum computing. We introduce a new strategy for realizing these effects, namely by hole and electron doping kagome lattice Mott insulators through, for instance, chemical substitution. As an example, we apply this new approach to the natural mineral herbertsmithite. We prove the feasibility of the proposed modifications by performing ab-initio density functional theory calculations and demonstrate the occurrence of the predicted effects using realistic models. Our results herald a new family of quantum anomalous Hall and quantum spin Hall insulators at affordable energy/temperature scales based on kagome lattices of transition metal ions.

  10. SU (N ) spin-wave theory: Application to spin-orbital Mott insulators

    Science.gov (United States)

    Dong, Zhao-Yang; Wang, Wei; Li, Jian-Xin

    2018-05-01

    We present the application of the SU (N ) spin-wave theory to spin-orbital Mott insulators whose ground states exhibit magnetic orders. When taking both spin and orbital degrees of freedom into account rather than projecting Hilbert space onto the Kramers doublet, which is the lowest spin-orbital locked energy levels, the SU (N ) spin-wave theory should take the place of the SU (2 ) one due to the inevitable spin-orbital multipole exchange interactions. To implement the application, we introduce an efficient general local mean-field method, which involves all local fluctuations, and develop the SU (N ) linear spin-wave theory. Our approach is tested firstly by calculating the multipolar spin-wave spectra of the SU (4 ) antiferromagnetic model. Then, we apply it to spin-orbital Mott insulators. It is revealed that the Hund's coupling would influence the effectiveness of the isospin-1 /2 picture when the spin-orbital coupling is not large enough. We further carry out the SU (N ) spin-wave calculations of two materials, α -RuCl3 and Sr2IrO4 , and find that the magnonic and spin-orbital excitations are consistent with experiments.

  11. Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals.

    Science.gov (United States)

    Nozoe, Soichiro; Kinoshita, Nobuaki; Matsuda, Masaki

    2016-04-01

    By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2 . 2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2 . 2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2 . 2CHCl3 can work as useful hole-injection and transport material in OLEDs.

  12. Excitonic metal-insulator phase transition of the Mott type in compressed calcium

    Science.gov (United States)

    Voronkova, T. O.; Sarry, A. M.; Sarry, M. F.; Skidan, S. G.

    2017-05-01

    It has been experimentally found that, under the static compression of a calcium crystal at room temperature, it undergoes a series of structural phase transitions: face-centered cubic lattice → body-centered cubic lattice → simple cubic lattice. It has been decided to investigate precisely the simple cubic lattice (because it is an alternative lattice) with the aim of elucidating the possibility of the existence of other (nonstructural) phase transitions in it by using for this purpose the Hubbard model for electrons with half-filled ns-bands and preliminarily transforming the initial electronic system into an electron-hole system by means of the known Shiba operators (applicable only to alternative lattices). This transformation leads to the fact that, in the new system of fermions, instead of the former repulsion, there is an attraction between electrons and holes. Elementary excitations of this new system are bound boson pairs—excitons. This system of fermions has been quantitatively analyzed by jointly using the equation-of-motion method and the direct algebraic method. The numerical integration of the analytically exact transcendental equations derived from the first principles for alternative (one-, two-, and three-dimensional) lattices has demonstrated that, in systems of two-species (electrons + hole) fermions, temperature-induced metal-insulator phase transitions of the Mott type are actually possible. Moreover, all these crystals are in fact excitonic insulators. This conclusion is in complete agreement with the analytically exact calculations of the ground state of a one-dimensional crystal (with half-filled bands), which were performed by Lieb and Wu with the aim to find out the Mott insulator-metal transition of another type.

  13. Surface electrical resistivity of insulators

    International Nuclear Information System (INIS)

    Senn, B. C.; Liesegang, J.

    1996-01-01

    A method is presented here for measuring surface charge decay, and theory has been developed so as to produce determinations of resistivity in the surface region of insulator films or wafers. This method incorporates the use of a coaxial cylindrical capacitor arrangement and an electrometer interfaced to a PC. The charge transport theory given here is based on Mott-Gurney diffusion, and allows easy interpretation of the experimental data, especially for the initial phase of surface charge decay. Resistivity measurements are presented for glass, mica, perspex and polyethylene, covering a range of 10 9 to 10 18 Ωm, as an illustration of the useful range of the instrument for static and antistatic materials, particularly in film or sheet form. Values for the surface charge diffusion constants of the materials are also presented. The charge transport theory has also been extended to allow the experimental and computational theoretical comparison of surface charge decay not only over the initial phase of charge decay, but also over longer times. The theoretical predictions show excellent agreement with experiment using the values for the diffusion constants referred to above

  14. Coherence and pairing in a doped Mott insulator: application to the cuprates.

    Science.gov (United States)

    Senthil, T; Lee, Patrick A

    2009-08-14

    The issues of single particle coherence and its interplay with singlet pairing are studied within the slave boson gauge theory of a doped Mott insulator. Prior work by one of us [T. Senthil, Phys. Rev. B 78, 045109 (2008)10.1103/PhysRevB.78.045109] showed that the coherence scale below which Landau quasiparticles emerge is parametrically lower than that identified in the slave boson mean field theory. Here we study the resulting new non-Fermi liquid intermediate temperature regime characterized by a single particle scattering rate that is linear in temperature (T). In the presence of a d-wave pair amplitude, this leads to a pseudogap state with T-dependent Fermi arcs near the nodal direction. Implications for understanding the cuprates are discussed.

  15. Two-magnon scattering in spin–orbital Mott insulator Ba2IrO4

    International Nuclear Information System (INIS)

    Tsuda, Shunsuke; Uji, Shinya; Okabe, Hirotaka; Isobe, Masaaki

    2016-01-01

    A spin–orbit induced Mott insulator Ba 2 IrO 4 with the pseudo-spin J eff = 1/2, showing an antiferromagnetic order (T N = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B 1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm −1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La 2 CuO 4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and J eff = 1/2 systems. (author)

  16. Two-Magnon Scattering in Spin-Orbital Mott Insulator Ba2IrO4

    Science.gov (United States)

    Tsuda, Shunsuke; Okabe, Hirotaka; Isobe, Masaaki; Uji, Shinya

    2016-02-01

    A spin-orbit induced Mott insulator Ba2IrO4 with the pseudo-spin Jeff = 1/2, showing an antiferromagnetic order (TN = 240 K), has been investigated by Raman spectroscopy. A broad peak with the B1g symmetry is found in a wide temperature region up to 400 K, which is ascribed to the two-magnon scattering. From the peak position and width, the exchange coupling and the antiferromagnetic correlation length are estimated to be 590 cm-1 and 45 Å at 90 K, respectively. The results are compared with the antiferromagnet La2CuO4 with the spin S = 1/2. We conclude that there is no significant difference in the short wavelength spin-excitation between the S = 1/2 and Jeff = 1/2 systems.

  17. Impurity band Mott insulators: a new route to high Tc superconductivity

    Directory of Open Access Journals (Sweden)

    Ganapathy Baskaran

    2008-01-01

    Full Text Available Last century witnessed the birth of semiconductor electronics and nanotechnology. The physics behind these revolutionary developments is certain quantum mechanical behaviour of 'impurity state electrons' in crystalline 'band insulators', such as Si, Ge, GaAs and GaN, arising from intentionally added (doped impurities. The present article proposes that certain collective quantum behaviour of these impurity state electrons, arising from Coulomb repulsions, could lead to superconductivity in a parent band insulator, in a way not suspected before. Impurity band resonating valence bond theory of superconductivity in boron doped diamond, recently proposed by us, suggests possibility of superconductivity emerging from impurity band Mott insulators. We use certain key ideas and insights from the field of high-temperature superconductivity in cuprates and organics. Our suggestion also offers new possibilities in the field of semiconductor electronics and nanotechnology. The current level of sophistication in solid state technology and combinatorial materials science is very well capable of realizing our proposal and discover new superconductors.

  18. Incipient 2D Mott insulators in extreme high electron density, ultra-thin GdTiO3/SrTiO3/GdTiO3 quantum wells

    Science.gov (United States)

    Allen, S. James; Ouellette, Daniel G.; Moetakef, Pouya; Cain, Tyler; Chen, Ru; Balents, Leon; Stemmer, Susanne

    2013-03-01

    By reducing the number of SrO planes in a GdTiO3 /SrTiO3/ GdTiO3 quantum well heterostructure, an electron gas with ~ fixed 2D electron density can be driven close to the Mott metal insulator transition - a quantum critical point at ~1 electron per unit cell. A single interface between the Mott insulator GdTiO3 and band insulator SrTiO3 has been shown to introduce ~ 1/2 electron per interface unit cell. Two interfaces produce a quantum well with ~ 7 1014 cm-2 electrons: at the limit of a single SrO layer it may produce a 2D magnetic Mott insulator. We use temperature and frequency dependent (DC - 3eV) conductivity and temperature dependent magneto-transport to understand the relative importance of electron-electron interactions, electron-phonon interactions, and surface roughness scattering as the electron gas is compressed toward the quantum critical point. Terahertz time-domain and FTIR spectroscopies, measure the frequency dependent carrier mass and scattering rate, and the mid-IR polaron absorption as a function of quantum well thickness. At the extreme limit of a single SrO plane, we observe insulating behavior with an optical gap substantially less than that of the surrounding GdTiO3, suggesting a novel 2D Mott insulator. MURI program of the Army Research Office - Grant No. W911-NF-09-1-0398

  19. Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

    KAUST Repository

    Wang, Lingfei; Li, Yongfeng; Bera, Ashok; Ma, Chun; Jin, Feng; Yuan, Kaidi; Yin, Wanjian; David, Adrian; Chen, Wei; Wu, Wenbin; Prellier, Wilfrid; Wei, Suhuai; Wu, Tao

    2015-01-01

    in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing

  20. On the Mott transition and the new metal-insulator transitions in doped covalent and polar crystals

    International Nuclear Information System (INIS)

    Dzhumanov, S.; Begimkulov, U.; Kurbanov, U.T.; Yavidov, B.Y.

    2001-10-01

    The Mott transition and new metal-insulator transitions (MIT's) and their distinctive features in doped covalent semiconductors and polar compounds are studied within the continuum model of extrinsic carrier self-trapping, the Hubbard impurity band model (with on-site Coulomb repulsion and screening effects) and the extrinsic (bi)polaronic band model (with short- and long-range carrier-impurity, impurity-phonon and carrier-phonon interactions and intercarrier correlation) using the appropriate tight-binding approximations and variational methods. We have shown the formation possibility of large-radius localized one- and two-carrier impurity (or defect) states and narrow impurity bands in the band gap and charge transfer gap of these carrier-doped systems. The extrinsic Mott-Hubbard and (bi)polaronic insulating gaps are calculated exactly. The proper criterions for Mott transition, extrinsic excitonic and (bi)polaronic MIT's are obtained. We have demonstrated that the Mott transition occurs in doped covalent semiconductors (i.e. Si and Ge) and some insulators with weak carrier-phonon coupling near the large-radius dopants. While, in doped polar compounds (e.g. oxide high-T c superconductors (HTSC) and related materials) the MIT's are new extrinsic (or intrinsic) (bi)polaronic MIT's. We have found that the anisotropy of the dielectric (or (bi)polaronic) properties of doped cuprate HTSC is responsible for smooth (or continuous) MIT's, stripe formation and suppression of high-T c superconductivity. Various experimental results on in-gap states, bands and MIT's in doped covalent semiconductors, oxide HTSC and related materials are in good agreement with the developed theory of Mott transition and new (bi)polaronic MIT's. (author)

  1. Electronic reconstruction at the interface between the Mott insulator LaVO{sub 3} and the band insulator SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Stuebinger, Martin; Gabel, Judith; Gagel, Philipp; Sing, Michael; Claessen, Ralph [Universitaet Wuerzburg, Physikalisches Institut and Roentgen Center for Complex Material Systems (RCCM), 97074 Wuerzburg (Germany)

    2016-07-01

    Akin to the well known oxide heterostructure LaAlO{sub 3}/SrTiO{sub 3} (LAO/STO) the formation of a conducting interface is found between the strongly correlated, polar Mott insulator LaV{sup 3+}O{sub 3} (LVO) and the non-polar band insulator STO. Since LaV{sup 3+}O{sub 3} tends to overoxidize to the thermodynamically more favourable LaV{sup 5+}O{sub 4} phase when exposed to air, a suitable passivation is required. Therefore, we have employed pulsed laser deposition thin film growth of LVO films with a crystalline LAO capping layer. In situ photoemission measurements of samples before and after being exposed to air show that the V oxidation state can indeed be stabilized by the LAO capping layer. By transport measurements, we identify an insulator-to-metal transition at a combined LAO/LVO overlayer thickness of 4 to 5 unit cells. With LVO being a Mott insulator, passivation by the LAO capping opens the opportunity to study a band-filling controlled Mott insulator to metal transition induced by a purely electrostatic mechanism without interfering overoxidation of the LVO film.

  2. Mott-insulating phases in unidimensional multi-components fermionic cold atoms

    International Nuclear Information System (INIS)

    Nonne, Heloise

    2011-01-01

    This thesis is devoted to the investigation of the Mott insulating phases arising in one-dimensional multicomponent fermionic cold atoms systems. The first part of this work is the study of a model with alkaline-earth cold atoms with nuclear spin I = 1/2. Those atoms enjoy an additional orbital degree of freedom, due to the presence of a metastable excited state; they thus have a total of four components. Our investigation is carried at half-filling, at strong and at weak couplings by means of analytic methods (conformal theory, bosonization, refermionization, renormalisation group). We found that the zero temperature phase diagram of the system is very rich: it contains seven Mott insulating phases, among which three are particularly interesting, since they display a hidden order, related to the Haldane physics of the antiferromagnetic spin-1 Heisenberg chain. Our conclusions are checked against numerical simulations, that were carried out with the density matrix renormalization group (DMRG) algorithm for intermediate couplings. The comparison shows an adiabatic continuity between the different regimes. A similar study for a model of cold atoms with hyperfine spin-3/2 highlights the Haldane physics in the charge sector of the degrees of freedom, with an effective model given by an antiferromagnetic pseudo-spin-1 chain. This analysis provides us an opportunity to investigate the zero temperature properties of the SO(5) bilinear-bi-quadratic Heisenberg chain. We show the presence of two gapped phases: one is dimerized, the other has a hidden symmetry (Z 2 x Z 2 ) 2 and spin-3/2 edge states, and they are separated by a critical point that belongs to the SO(5) 1 universality class. Finally, we investigate half-integer hyperfine spin cold atoms systems with 2N components which generalized the results obtained for the hyperfine spin-3/2 model. This leads us to find an even/odd effect according to the parity of N, very similar to the even/odd effect of spin chains

  3. Reusable Surface Insulation

    Science.gov (United States)

    1997-01-01

    Advanced Flexible Reusable Surface Insulation, developed by Ames Research Center, protects the Space Shuttle from the searing heat that engulfs it on reentry into the Earth's atmosphere. Initially integrated into the Space Shuttle by Rockwell International, production was transferred to Hi-Temp Insulation Inc. in 1974. Over the years, Hi-Temp has created many new technologies to meet the requirements of the Space Shuttle program. This expertise is also used commercially, including insulation blankets to cover aircrafts parts, fire barrier material to protect aircraft engine cowlings and aircraft rescue fire fighter suits. A Fire Protection Division has also been established, offering the first suit designed exclusively by and for aircraft rescue fire fighters. Hi-Temp is a supplier to the Los Angeles City Fire Department as well as other major U.S. civil and military fire departments.

  4. Dynamical cluster approximation plus semiclassical approximation study for a Mott insulator and d-wave pairing

    Science.gov (United States)

    Kim, SungKun; Lee, Hunpyo

    2017-06-01

    Via a dynamical cluster approximation with N c = 4 in combination with a semiclassical approximation (DCA+SCA), we study the doped two-dimensional Hubbard model. We obtain a plaquette antiferromagnetic (AF) Mott insulator, a plaquette AF ordered metal, a pseudogap (or d-wave superconductor) and a paramagnetic metal by tuning the doping concentration. These features are similar to the behaviors observed in copper-oxide superconductors and are in qualitative agreement with the results calculated by the cluster dynamical mean field theory with the continuous-time quantum Monte Carlo (CDMFT+CTQMC) approach. The results of our DCA+SCA differ from those of the CDMFT+CTQMC approach in that the d-wave superconducting order parameters are shown even in the high doped region, unlike the results of the CDMFT+CTQMC approach. We think that the strong plaquette AF orderings in the dynamical cluster approximation (DCA) with N c = 4 suppress superconducting states with increasing doping up to strongly doped region, because frozen dynamical fluctuations in a semiclassical approximation (SCA) approach are unable to destroy those orderings. Our calculation with short-range spatial fluctuations is initial research, because the SCA can manage long-range spatial fluctuations in feasible computational times beyond the CDMFT+CTQMC tool. We believe that our future DCA+SCA calculations should supply information on the fully momentum-resolved physical properties, which could be compared with the results measured by angle-resolved photoemission spectroscopy experiments.

  5. A pure Hubbard model with demonstrable pairing adjacent to the Mott-insulating phase

    International Nuclear Information System (INIS)

    Champion, J D; Long, M W

    2003-01-01

    We introduce a Hubbard model on a particular class of geometries, and consider the effect of doping the highly spin-degenerate Mott-insulating state with a microscopic number of holes in the extreme strong-coupling limit. The geometry is quite general, with pairs of atomic sites at each superlattice vertex, and a highly frustrated inter-atomic connectivity: the one-dimensional realization is a chain of edge-sharing tetrahedra. The sole model parameter is the ratio of intra-pair to inter-pair hopping matrix elements. If the intra-pair hopping is negligible then introducing a microscopic number of holes results in a ferromagnetic Nagaoka groundstate. Conversely, if the intra-pair hopping is comparable with the inter-pair hopping then the groundstate is low spin with short-ranged spin correlations. We exactly solve the correlated motion of a pair of holes in such a state and find that, in 1d and 2d, they form a bound pair on a length scale that increases with diminishing binding energy. This result is pertinent to the long-standing problem of hole motion in the CuO 2 planes of the high-temperature superconductors: we have rigorously shown that, on our frustrated geometry, the holes pair up and a short-ranged low-spin state is generated by hole motion alone

  6. Two-dimensional orbital ordering in d{sup 1} Mott insulator Sr{sub 2}VO{sub 4}

    Energy Technology Data Exchange (ETDEWEB)

    Viennois, R; Giannini, E; Teyssier, J; Elia, J; Van der Marel, D [DPMC, Universite de Geneve, 24 quai Ernest Ansermet, CH-1211 Geneve (Switzerland); Deisenhofer, J, E-mail: Romain.Viennois@unige.c [Institute of Physics, University of Augsburg, Augsburg (Germany)

    2010-01-15

    The Mott insulator Sr{sub 2}VO{sub 4} is a unique d{sup 1} two-dimensional compound exhibiting an orbital ordering transition. In addition to the orbital ordering transition at about 100 K, we discovered a ferromagnetic transition below 10 K, thus confirming the predictions of recent band structure calculations. The magnetic properties proved to be strongly sensitive to the material purity, the actual oxygen stoichiometry and the crystallographic parameters. An additional transition is observed at 125 K, which is believed to be due to structural modifications.

  7. Superconductivity induced by extremely high pressures in organic Mott-insulator β'-(BEDT-TTF)2IBrCl

    International Nuclear Information System (INIS)

    Kano, M; Uchiyama, K; Taniguchi, H; Hedo, M; Matsubayashi, K; Uwatoko, Y

    2009-01-01

    Previous research revealed that, at a pressure of 8.2 GPa, β'-(BEDT-TTF)2ICl2 possesses the highest transition temperature (T C ) among the organic conductors[1]. In the present work, transport studies under extremely high pressure of up to 10.0 GPa, using a cubic anvil press are reported for a related material, β'-(BEDT-TTF)2IBrCl which is an organic Mott-insulator in ambient pressure. Superconductivity with the highest T c (8.5 K, onset) was observed at P = 8.6 GPa.

  8. Temperature dependence of hole mobility in Mott insulators: Normal-state resistivity of high-T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Kumar, N.

    1989-01-01

    We consider the diffusion of a hole injected in a Mott insulator described by a one-band Hubbard Hamiltonian at half-filling and in the atomic limit. The diffusion coefficient turns out to be temperature independent exactly giving 1/T dependence for the drift mobility via the Einstein relation. This is in marked disagreement with the (1/T)/sup 1/2/ dependence obtaining in the self-retracing path approximation at low temperatures. We note the possible relevance of our result to the linear T dependence of the normal-state resistivity observed in the high-T/sub c/ oxide superconductors

  9. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-01-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance

  10. Impact ionization processes in the steady state of a driven Mott-insulating layer coupled to metallic leads

    Science.gov (United States)

    Sorantin, Max E.; Dorda, Antonius; Held, Karsten; Arrigoni, Enrico

    2018-03-01

    We study a simple model of photovoltaic energy harvesting across a Mott-insulating gap consisting of a correlated layer connected to two metallic leads held at different chemical potentials. We address, in particular, the issue of impact ionization, whereby a particle photoexcited to the high-energy part of the upper Hubbard band uses its extra energy to produce a second particle-hole excitation. We find a drastic increase of the photocurrent upon entering the frequency regime where impact ionization is possible. At large values of the Mott gap, where impact ionization is energetically not allowed, we observe a suppression of the current and a piling up of charge in the high-energy part of the upper Hubbard band. Our study is based on a Floquet dynamical mean-field theory treatment of the steady state with the so-called auxiliary master equation approach as impurity solver. We verify that an additional approximation, taking the self-energy diagonal in the Floquet indices, is appropriate for the parameter range we are considering.

  11. Mean-Field Scaling of the Superfluid to Mott Insulator Transition in a 2D Optical Superlattice.

    Science.gov (United States)

    Thomas, Claire K; Barter, Thomas H; Leung, Tsz-Him; Okano, Masayuki; Jo, Gyu-Boong; Guzman, Jennie; Kimchi, Itamar; Vishwanath, Ashvin; Stamper-Kurn, Dan M

    2017-09-08

    The mean-field treatment of the Bose-Hubbard model predicts properties of lattice-trapped gases to be insensitive to the specific lattice geometry once system energies are scaled by the lattice coordination number z. We test this scaling directly by comparing coherence properties of ^{87}Rb gases that are driven across the superfluid to Mott insulator transition within optical lattices of either the kagome (z=4) or the triangular (z=6) geometries. The coherent fraction measured for atoms in the kagome lattice is lower than for those in a triangular lattice with the same interaction and tunneling energies. A comparison of measurements from both lattices agrees quantitatively with the scaling prediction. We also study the response of the gas to a change in lattice geometry, and observe the dynamics as a strongly interacting kagome-lattice gas is suddenly "hole doped" by introducing the additional sites of the triangular lattice.

  12. Fermi surfaces in Kondo insulators

    Science.gov (United States)

    Liu, Hsu; Hartstein, Máté; Wallace, Gregory J.; Davies, Alexander J.; Ciomaga Hatnean, Monica; Johannes, Michelle D.; Shitsevalova, Natalya; Balakrishnan, Geetha; Sebastian, Suchitra E.

    2018-04-01

    We report magnetic quantum oscillations measured using torque magnetisation in the Kondo insulator YbB12 and discuss the potential origin of the underlying Fermi surface. Observed quantum oscillations as well as complementary quantities such as a finite linear specific heat capacity in YbB12 exhibit similarities with the Kondo insulator SmB6, yet also crucial differences. Small heavy Fermi sections are observed in YbB12 with similarities to the neighbouring heavy fermion semimetallic Fermi surface, in contrast to large light Fermi surface sections in SmB6 which are more similar to the conduction electron Fermi surface. A rich spectrum of theoretical models is suggested to explain the origin across different Kondo insulating families of a bulk Fermi surface potentially from novel itinerant quasiparticles that couple to magnetic fields, yet do not couple to weak DC electric fields.

  13. Thouless energy as a unifying concept for Josephson junctions tuned through the Mott metal-insulator transition

    Science.gov (United States)

    Tahvildar-Zadeh, A. N.; Freericks, J. K.; Nikolić, B. K.

    2006-05-01

    The Thouless energy was introduced in the 1970s as a semiclassical energy for electrons diffusing through a finite-sized conductor. It turns out to be an important quantum-mechanical energy scale for many systems ranging from disordered metals to quantum chaos to quantum chromodynamics. In particular, it has been quite successful in describing the properties of Josephson junctions when the barrier is a diffusive normal-state metal. The Thouless energy concept can be generalized to insulating barriers by extracting an energy scale from the two-probe Kubo conductance of a strongly correlated electron system (metallic or insulating) via a generalized definition of the quantum-mechanical level spacing to many-body systems. This energy scale is known to determine the crossover from tunneling to Ohmic (thermally activated) transport in normal tunnel junctions. Here we use it to illustrate how the quasiclassical picture of transport in Josephson junctions is modified as the strongly correlated barrier passes through the Mott transition. Surprisingly, we find the quasiclassical form holds well beyond its putative realm of validity.

  14. Antiferromagnetic Mott insulating state in the single-component molecular material Pd(tmdt)2

    Science.gov (United States)

    Takagi, Rina; Sari, Dita Puspita; Mohd-Tajudin, Saidah Sakinah; Ashi, Retno; Watanabe, Isao; Ishibashi, Shoji; Miyagawa, Kazuya; Ogura, Satomi; Zhou, Biao; Kobayashi, Akiko; Kanoda, Kazushi

    2017-12-01

    A family of compounds built by a single molecular species, M (tmdt) 2, with a metal ion, M , and organic ligands, tmdt, affords diverse electronic phases due to M -dependent interplays between d electrons in M , and π electrons in tmdt. We investigated the spin state in Pd (tmdt) 2 , a π -electron system without a d -electron contribution, through 1H nuclear magnetic resonance (NMR) and muon-spin resonance experiments. The temperature profiles of the NMR linewidth, relaxation rate, and asymmetry parameter in muon decay show an inhomogeneous antiferromagnetic order with moments distributed around ˜0.1 μB that onsets at above 100 K. This result provides an example of the antiferromagnetic order in a pure π -electron system in M (tmdt) 2, and it demonstrates that correlation among the π electrons is so strong as to give the Néel temperature over 100 K. The small and inhomogeneous moments are understandable as the crucial disorder effect in correlated electrons situated near the Mott transition.

  15. Interplay of long-range and short-range Coulomb interactions in an Anderson-Mott insulator

    Science.gov (United States)

    Baćani, Mirko; Novak, Mario; Orbanić, Filip; Prša, Krunoslav; Kokanović, Ivan; Babić, Dinko

    2017-07-01

    In this paper, we tackle the complexity of coexisting disorder and Coulomb electron-electron interactions (CEEIs) in solids by addressing a strongly disordered system with intricate CEEIs and a screening that changes both with charge carrier doping level Q and temperature T . We report on an experimental comparative study of the T dependencies of the electrical conductivity σ and magnetic susceptibility χ of polyaniline pellets doped with dodecylbenzenesulfonic acid over a wide range. This material is special within the class of doped polyaniline by exhibiting in the electronic transport a crossover between a low-T variable range hopping (VRH) and a high-T nearest-neighbor hopping (NNH) well below room temperature. Moreover, there is evidence of a soft Coulomb gap ΔC in the disorder band, which implies the existence of a long-range CEEI. Simultaneously, there is an onsite CEEI manifested as a Hubbard gap U and originating in the electronic structure of doped polyaniline, which consists of localized electron states with dynamically varying occupancy. Therefore, our samples represent an Anderson-Mott insulator in which long-range and short-range CEEIs coexist. The main result of the study is the presence of a crossover between low- and high-T regimes not only in σ (T ) but also in χ (T ) , the crossover temperature T* being essentially the same for both observables over the entire doping range. The relatively large electron localization length along the polymer chains results in U being small, between 12 and 20 meV for the high and low Q , respectively. Therefore, the thermal energy at T* is sufficiently large to lead to an effective closing of the Hubbard gap and the consequent appearance of NNH in the electronic transport within the disorder band. ΔC is considerably larger than U , decreasing from 190 to 30 meV as Q increases, and plays the role of an activation energy in the NNH.

  16. Electrostatic doping of a Mott insulator in an oxide heterostructure: the case of LaVO{sub 3}/SrTiO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Mueller, Andreas; Pfaff, Florian; Sing, Michael; Claessen, Ralph [Physikalisches Insititut and Roentgen Research Center for Complex Material Systems, Universitaet Wuerzburg, D-97074 Wuerzburg (Germany); Boschker, Hans; Kamp, Martin; Koster, Gertjan; Rijnders, Guus [Faculty of Science and Technology and MESA-plus Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

    2012-07-01

    The discovery of a quasi-two-dimensional electron system at the interface between the two band insulators LaAlO{sub 3} and SrTiO{sub 3} has triggered intense investigations of oxide heterostructures with other material combinations. The hope is that by combining a polar overlayer with a non-polar substrate electronic reconstruction will lead to highly mobile interface charge carriers with special properties. The formation of a conducting interface layer in epitaxial LaVO{sub 3}/SrTiO{sub 3}, where LaVO{sub 3} is a Mott insulator, is studied by transport measurements and hard X-ray photoelectron spectroscopy. We identify an insulator-to-metal transition above a critical LaVO{sub 3} thickness with transport properties similar to those recently reported for LaAlO{sub 3}/SrTiO{sub 3} interfaces. Interestingly, our photoemission measurements give evidence that electronic charge is transferred exclusively to the LaVO{sub 3}-side of the interface caused by an electronic reconstruction within the film itself. This opens the opportunity to study a band-filling controlled Mott transition induced by a purely electrostatic mechanism.

  17. Fingerprints of spin-orbital polarons and of their disorder in the photoemission spectra of doped Mott insulators with orbital degeneracy

    Science.gov (United States)

    Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

    2018-04-01

    We explore the effects of disordered charged defects on the electronic excitations observed in the photoemission spectra of doped transition metal oxides in the Mott insulating regime by the example of the R1 -xCaxVO3 perovskites, where R = La, ⋯, Lu. A fundamental characteristic of these vanadium d2 compounds with partly filled t2 g valence orbitals is the persistence of spin and orbital order up to high doping, in contrast to the loss of magnetic order in high-Tc cuprates at low defect concentration. We study the disordered electronic structure of such doped Mott-Hubbard insulators within the unrestricted Hartree-Fock approximation and, as a result, manage to explain the spectral features that occur in photoemission and inverse photoemission. In particular, (i) the atomic multiplet excitations in the inverse photoemission spectra and the various defect-related states and satellites are qualitatively well reproduced, (ii) a robust Mott gap survives up to large doping, and (iii) we show that the defect states inside the Mott gap develop a soft gap at the Fermi energy. The soft defect-states gap, which separates the highest occupied from the lowest unoccupied states, can be characterized by a shape and a scale parameter extracted from a Weibull statistical sampling of the density of states near the chemical potential. These parameters provide a criterion and a comprehensive schematization for the insulator-metal transition in disordered systems. Our results provide clear indications that doped holes are bound to charged defects and form small spin-orbital polarons whose internal kinetic energy is responsible for the opening of the soft defect-states gap. We show that this kinetic gap survives disorder fluctuations of defects and is amplified by the long-range electron-electron interactions, whereas we observe a Coulomb singularity in the atomic limit. The small size of spin-orbital polarons is inferred by an analysis of the inverse participation ratio and by

  18. Angle Resolved Photoemission Spectroscopy Studies of the Mott Insulator to Superconductor Evolution in Ca2-xNaxCuO2Cl2

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Kyle Michael

    2005-09-02

    It is widely believed that many of the exotic physical properties of the high-T{sub c} cuprate superconductors arise from the proximity of these materials to the strongly correlated, antiferromagnetic Mott insulating state. Therefore, one of the fundamental questions in the field of high-temperature superconductivity is to understand the insulator-to-superconductor transition and precisely how the electronic structure of Mott insulator evolves as the first holes are doped into the system. This dissertation presents high-resolution, doping dependent angle-resolved photoemission (ARPES) studies of the cuprate superconductor Ca{sub 2-x}Na{sub x}CuO{sub 2}Cl{sub 2}, spanning from the undoped parent Mott insulator to a high-temperature superconductor with a T{sub c} of 22 K. A phenomenological model is proposed to explain how the spectral lineshape, the quasiparticle band dispersion, and the chemical potential all progress with doping in a logical and self-consistent framework. This model is based on Franck-Condon broadening observed in polaronic systems where strong electron-boson interactions cause the quasiparticle residue, Z, to be vanishingly small. Comparisons of the low-lying states to different electronic states in the valence band strongly suggest that the coupling of the photohole to the lattice (i.e. lattice polaron formation) is the dominant broadening mechanism for the lower Hubbard band states. Combining this polaronic framework with high-resolution ARPES measurements finally provides a resolution to the long-standing controversy over the behavior of the chemical potential in the high-T{sub c} cuprates. This scenario arises from replacing the conventional Fermi liquid quasiparticle interpretation of the features in the Mott insulator by a Franck-Condon model, allowing the reassignment of the position of the quasiparticle pole. As a function of hole doping, the chemical potential shifts smoothly into the valence band while spectral weight is transferred

  19. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    Science.gov (United States)

    Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

    2017-12-01

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  20. Non-destructive reversible resistive switching in Cr doped Mott insulator Ca2RuO4: Interface vs bulk effects

    KAUST Repository

    Shen, Shida

    2017-12-29

    A non-destructive reversible resistive switching is demonstrated in single crystals of Cr-doped Mott insulator Ca2RuO4. An applied electrical bias was shown to reduce the DC resistance of the crystal by as much as 75%. The original resistance of the sample could be restored by applying an electrical bias of opposite polarity. We have studied this resistive switching as a function of the bias strength, applied magnetic field, and temperature. A combination of 2-, 3-, and 4-probe measurements provide a means to distinguish between bulk and interfacial contributions to the switching and suggests that the switching is mostly an interfacial effect. The switching was tentatively attributed to electric-field driven lattice distortions which accompany the impurity-induced Mott transition. This field effect was confirmed by temperature-dependent resistivity measurements which show that the activation energy of this material can be tuned by an applied DC electrical bias. The observed resistance switching can potentially be used for building non-volatile memory devices like resistive random access memory.

  1. Propagation of quantum correlations after a quench in the Mott-insulator regime of the Bose-Hubbard model

    International Nuclear Information System (INIS)

    Krutitsky, Konstantin V.; Navez, Patrick; Schuetzhold, Ralf; Queisser, Friedemann

    2014-01-01

    We study a quantum quench in the Bose-Hubbard model where the tunneling rate J is suddenly switched from zero to a finite value in the Mott regime. In order to solve the many-body quantum dynamics far from equilibrium, we consider the reduced density matrices for a finite number of lattice sites and split them up into on-site density operators, i.e., the mean field, plus two-point and three-point correlations etc. Neglecting three-point and higher correlations, we are able to numerically simulate the time-evolution of the on-site density matrices and the two-point quantum correlations (e.g., their effective light-cone structure) for a comparably large number of lattice sites. (orig.)

  2. Status of surface conduction in topological insulators

    International Nuclear Information System (INIS)

    Barua, Sourabh; Rajeev, K. P.

    2014-01-01

    In this report, we scrutinize the thickness dependent resistivity data from the recent literature on electrical transport measurements in topological insulators. A linear increase in resistivity with increase in thickness is expected in the case of these materials since they have an insulating bulk and a conducting surface. However, such a trend is not seen in the resistivity versus thickness data for all the cases examined, except for some samples, where it holds for a range of thickness

  3. Individual Magnetic Molecules on Ultrathin Insulating Surfaces

    Science.gov (United States)

    El Hallak, Fadi; Warner, Ben; Hirjibehedin, Cyrus

    2012-02-01

    Single molecule magnets have attracted ample interest because of their exciting magnetic and quantum properties. Recent studies have demonstrated that some of these molecules can be evaporated on surfaces without losing their magnetic properties [M. Mannini et al., Nature 468, 417, (2010)]. This remarkable progress enhances the chances of real world applications for these molecules. We present STM imaging and spectroscopy data on iron phthalocyanine molecules deposited on Cu(100) and on a Cu2N ultrathin insulating surface. These molecules have been shown to display a large magnetic anisotropy on another thin insulating surface, oxidized Cu(110) [N. Tsukahara et al., Phys. Rev. Lett. 102, 167203 (2009)]. By using a combination of elastic and inelastic electron tunnelling spectroscopy, we investigate the binding of the molecules to the surface and the impact that the surface has on their electronic and magnetic properties.

  4. In-surface confinement of topological insulator nanowire surface states

    International Nuclear Information System (INIS)

    Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann

    2015-01-01

    The bandstructures of [110] and [001] Bi 2 Te 3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects

  5. In-surface confinement of topological insulator nanowire surface states

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Fan W., E-mail: fanchen@purdue.edu [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); Jauregui, Luis A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Tan, Yaohua [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Manfra, Michael [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Klimeck, Gerhard [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Chen, Yong P. [Department of Physics and Astronomy, Purdue, West Lafayette, Indiana 47907 (United States); School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States); Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907 (United States); Kubis, Tillmann [Network for Computational Nanotechnology, Purdue, West Lafayette, Indiana 47907 (United States)

    2015-09-21

    The bandstructures of [110] and [001] Bi{sub 2}Te{sub 3} nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

  6. In-surface confinement of topological insulator nanowire surface states

    Science.gov (United States)

    Chen, Fan W.; Jauregui, Luis A.; Tan, Yaohua; Manfra, Michael; Klimeck, Gerhard; Chen, Yong P.; Kubis, Tillmann

    2015-09-01

    The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assumption that all topological insulator (TI) wire surfaces are equivalent is inappropriate. The Fermi velocity of chemically distinct wire surfaces differs significantly which creates an effective in-surface confinement potential. As a result, topological insulator surface states prefer specific surfaces. Therefore, experiments have to be designed carefully not to probe surfaces unfavorable to the surface states (low density of states) and thereby be insensitive to the TI-effects.

  7. Magnetism and the low-energy electronic structure of Mott insulators K{sub 2}CoF{sub 4} and SrMnO{sub 3} perovskites

    Energy Technology Data Exchange (ETDEWEB)

    Nalecz, D.M., E-mail: sfnalecz@cyf-kr.edu.pl [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Radwanski, R.J. [Institute of Physics, Pedagogical University, 30-084, Krakow (Poland); Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland); Ropka, Z. [Center of Solid State Physics, S" n" t Filip 5, 31-150, Krakow (Poland)

    2016-09-01

    For Mott insulators, K{sub 2}CoF{sub 4} and SrMnO{sub 3}, we have calculated, in the purely ionic model, the low-energy electronic structure both in the paramagnetic and magnetic state as well as zero-temperature magnetic moment, its direction and its temperature dependence. We have calculated the octahedral crystal-field strength 10Dq to be 0.98 and 2.25 eV. We claim that for an adequate theoretical description of magnetic properties even small local distortions and the intra-atomic relativistic spin-orbit coupling have to be taken into account. Our studies have revealed a strong interplay of the magnetism, the orbital moment in particular, with the local crystallographic structure. The calculated orbital moment in K{sub 2}CoF{sub 4} is very large, 1.06 μ{sub B}, giving 30% contribution to the total moment - this result points the necessity to “unquench” the orbital magnetism in 3d compounds. We consistently described magnetic and some optical properties of these compounds, containing atoms with incomplete 3d shell, in agreement with their insulating ground state. - Highlights: • The octahedral crystal-field 10Dq amounts to 0.98 and 2.25 eV in K{sub 2}CoF{sub 4} and SrMnO{sub 3}. • The low-energy electronic structures in the magnetic state is displayed. • There is a strong interplay of the magnetism and the local crystal structure. • Temperature dependence of the Mn{sup 4+}- ion magnetic moment has been described. • Relativistic spin-orbit coupling is indispensable for description of 3d magnetism.

  8. Nanoscale processes on insulating surfaces

    National Research Council Canada - National Science Library

    Gnecco, Enrico; Szymoński, Marek

    2009-01-01

    ... the group of Prof. Ernst Meyer in Basel, where he investigated friction processes on alkali halide surfaces in ultra high vacuum (UHV). The main result was the observation of a logarithmic velocity dependence of atomic friction, which was interpreted within a combination of the classical Tomlinson and Eyring models. After his Ph.D. he joined the ...

  9. Ba2NiOsO6 : A Dirac-Mott insulator with ferromagnetism near 100 K

    International Nuclear Information System (INIS)

    Feng, Hai L.; Calder, Stuart

    2016-01-01

    In this study, the ferromagnetic semiconductor Ba 2 NiOsO 6 (T mag ~ 100 K) was synthesized at 6 GPa and 1500 °C. It crystallizes into a double perovskite structure [Fm - 3m; a = 8.0428 (1) Å], where the Ni 2+ and Os 6+ ions are perfectly ordered at the perovskite B site. We show that the spin-orbit coupling of Os 6+ plays an essential role in opening the charge gap. The magnetic state was investigated by density functional theory calculations and powder neutron diffraction. The latter revealed a collinear ferromagnetic order in a > 21 kOe magnetic field at 5 K. The ferromagnetic gapped state is fundamentally different from that of known dilute magnetic semiconductors such as (Ga,Mn)As and (Cd,Mn)Te (T mag < 180 K), the spin-gapless semiconductor Mn 2 CoAl (T mag ~ 720 K), and the ferromagnetic insulators EuO (T mag ~ 70 K) and Bi 3 Cr 3 O 11 (T mag ~ 220 K). It is also qualitatively different from known ferrimagnetic insulators and semiconductors, which are characterized by an antiparallel spin arrangement. Our finding of the ferromagnetic semiconductivity of Ba 2 NiOsO 6 should increase interest in the platinum group oxides, because this alternative class of materials should be useful in the development of spintronic, quantum magnetic, and related devices.

  10. Axial grazing collisions with insulator surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Gravielle, M.S. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina) and Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)]. E-mail: msilvia@iafe.uba.ar; Miraglia, J.E. [Instituto de Astronomia y Fisica del Espacio (IAFE), Consejo Nacional de Investigaciones Cientificas y Tecnicas, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina); Departamento de Fisica, FCEN, Universidad de Buenos Aires (Argentina)

    2007-05-15

    Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band.

  11. Axial grazing collisions with insulator surfaces

    International Nuclear Information System (INIS)

    Gravielle, M.S.; Miraglia, J.E.

    2007-01-01

    Electron capture and emission processes from insulator surfaces produced by grazing impact of fast ions are investigated under axial incidence conditions. For crystal surfaces we develop a model based on distorted wave methods, which allows us to express the coherent transition amplitude along the projectile path as a sum of atomic amplitudes, each one associated with a different lattice site. The method is applied to 100 keV protons colliding with LiF surfaces. For electron transitions from a given initial crystal state, the probabilities display strong interference effects as a function of the crystal orientation. But the interference patterns disappear when these partial probabilities are added to derive the total probability from the surface band

  12. Mott transitions in the periodic Anderson model

    International Nuclear Information System (INIS)

    Logan, David E; Galpin, Martin R; Mannouch, Jonathan

    2016-01-01

    The periodic Anderson model (PAM) is studied within the framework of dynamical mean-field theory, with particular emphasis on the interaction-driven Mott transition it contains, and on resultant Mott insulators of both Mott–Hubbard and charge-transfer type. The form of the PAM phase diagram is first deduced on general grounds using two exact results, over the full range of model parameters and including metallic, Mott, Kondo and band insulator phases. The effective low-energy model which describes the PAM in the vicinity of a Mott transition is then shown to be a one-band Hubbard model, with effective hoppings that are not in general solely nearest neighbour, but decay exponentially with distance. This mapping is shown to have a range of implications for the physics of the problem, from phase boundaries to single-particle dynamics; all of which are confirmed and supplemented by NRG calculations. Finally we consider the locally degenerate, non-Fermi liquid Mott insulator, to describe which requires a two-self-energy description. This is shown to yield a number of exact results for the associated local moment, charge, and interaction-renormalised levels, together with a generalisation of Luttinger’s theorem to the Mott insulator. (paper)

  13. On-surface synthesis on a bulk insulator surface

    Science.gov (United States)

    Richter, Antje; Floris, Andrea; Bechstein, Ralf; Kantorovich, Lev; Kühnle, Angelika

    2018-04-01

    On-surface synthesis has rapidly emerged as a most promising approach to prepare functional molecular structures directly on a support surface. Compared to solution synthesis, performing chemical reactions on a surface offers several exciting new options: due to the absence of a solvent, reactions can be envisioned that are otherwise not feasible due to the insolubility of the reaction product. Perhaps even more important, the confinement to a two-dimensional surface might enable reaction pathways that are not accessible otherwise. Consequently, on-surface synthesis has attracted great attention in the last decade, with an impressive number of classical reactions transferred to a surface as well as new reactions demonstrated that have no classical analogue. So far, the majority of the work has been carried out on conducting surfaces. However, when aiming for electronic decoupling of the resulting structures, e.g. for the use in future molecular electronic devices, non-conducting surfaces are highly desired. Here, we review the current status of on-surface reactions demonstrated on the (10.4) surface of the bulk insulator calcite. Besides thermally induced C-C coupling of halogen-substituted aryls, photochemically induced [2  +  2] cycloaddition has been proven possible on this surface. Moreover, experimental evidence exists for coupling of terminal alkynes as well as diacetylene polymerization. While imaging of the resulting structures with dynamic atomic force microscopy provides a direct means of reaction verification, the detailed reaction pathway often remains unclear. Especially in cases where the presence of metal atoms is known to catalyze the corresponding solution chemistry reaction (e.g. in the case of the Ullmann reaction), disclosing the precise reaction pathway is of importance to understand and generalize on-surface reactivity on a bulk insulator surface. To this end, density-functional theory calculations have proven to provide atomic

  14. Mott glass from localization and confinement

    Science.gov (United States)

    Chou, Yang-Zhi; Nandkishore, Rahul M.; Radzihovsky, Leo

    2018-05-01

    We study a system of fermions in one spatial dimension with linearly confining interactions and short-range disorder. We focus on the zero-temperature properties of this system, which we characterize using bosonization and the Gaussian variational method. We compute the static compressibility and ac conductivity, and thereby demonstrate that the system is incompressible, but exhibits gapless optical conductivity. This corresponds to a "Mott glass" state, distinct from an Anderson and a fully gapped Mott insulator, arising due to the interplay of disorder and charge confinement. We argue that this Mott glass phenomenology should persist to nonzero temperatures.

  15. Polymorphous band structure model of gapping in the antiferromagnetic and paramagnetic phases of the Mott insulators MnO, FeO, CoO, and NiO

    Science.gov (United States)

    Trimarchi, Giancarlo; Wang, Zhi; Zunger, Alex

    2018-01-01

    The existence of band gaps in both the antiferromagnetic (AFM) and paramagnetic (PM) phases of the classic NaCl-structure Mott insulators MnO, FeO, CoO, and NiO is traditionally viewed and taught as a manifestation of strong correlation whereby insulation results from electrons moving across the lattice forming states with doubly occupied d orbitals on certain atomic sites and empty d orbitals on other sites. Within such theories, the gap of the AFM and PM phases of these oxides emerges even in the absence of spatial symmetry breaking. The need for such a correlated picture is partially based on the known failure of the commonly used band models for the PM phase that assume for such a spin disordered state the macroscopically averaged NaCl structure, where all transition metal (TM) sites are symmetry-equivalent (a monomorphous description), producing a gapless PM state with zero magnetic moments, in sharp conflict with experiment. Here, we seek to understand the minimum theoretical description needed to capture the leading descriptors of ground state Mott insulation in the classic, 3 d monoxide Mott systems—gapping and moment formation in the AFM and PM phase. As noted by previous authors, the spin-ordered AFM phase in these materials already shows in band theory a significant band gap when one doubles the NaCl unit cell by permitting different potentials for transition-metal atoms with different spins. For the spin-disordered PM phase, we allow analogously larger NaCl-type supercells where each TM site can have different spin direction and local bonding environments (i.e., disordered), yet the total spin is zero. Such a polymorphous description has the flexibility to acquire symmetry-breaking energy-lowering patterns that can lift the degeneracy of the d orbitals and develop large on-site magnetic moments without violating the global, averaged NaCl symmetry. Electrons are exchanged between spin-up and spin-down bands to create closed-shell insulating

  16. A Mott-like State of Molecules

    International Nuclear Information System (INIS)

    Duerr, S.; Volz, T.; Syassen, N.; Bauer, D. M.; Hansis, E.; Rempe, G.

    2006-01-01

    We prepare a quantum state where each site of an optical lattice is occupied by exactly one molecule. This is the same quantum state as in a Mott insulator of molecules in the limit of negligible tunneling. Unlike previous Mott insulators, our system consists of molecules which can collide inelastically. In the absence of the optical lattice these collisions would lead to fast loss of the molecules from the sample. To prepare the state, we start from a Mott insulator of atomic 87Rb with a central region, where each lattice site is occupied by exactly two atoms. We then associate molecules using a Feshbach resonance. Remaining atoms can be removed using blast light. Our method does not rely on the molecule-molecule interaction properties and is therefore applicable to many systems

  17. Investigation of Vacuum Insulator Surface Dielectric Strength with Nanosecond Pulses

    International Nuclear Information System (INIS)

    Nunnally, W.C.; Krogh, M.; Williams, C.; Trimble, D.; Sampayan, S.; Caporaso, G.

    2003-01-01

    The maximum vacuum insulator surface dielectric strength determines the acceleration electric field gradient possible in a short pulse accelerator. Previous work has indicated that higher electric field strengths along the insulator-vacuum interface might be obtained as the pulse duration is decreased. In this work, a 250 kV, single ns wide impulse source was applied to small diameter, segmented insulators samples in a vacuum to evaluate the multi-layer surface dielectric strength of the sample construction. Resonances in the low inductance test geometry were used to obtain unipolar, pulsed electric fields in excess of 100 MV/m on the insulator surface. The sample construction, experimental arrangement and experimental results are presented for the initial data in this work. Modeling of the multi-layer structure is discussed and methods of improving insulator surface dielectric strength in a vacuum are proposed

  18. Mapping the electron correlation onto a model Hamiltonian for Cs/GaAs(110): a Mott-Hubbard insulator at quarter filling

    CERN Document Server

    Chen Chang Feng

    1998-01-01

    We have constructed an effective model Hamiltonian in the Hubbard formalism for the Cs/GaAs(110) surface at quarter-monolayer coverage with all of the parameters extracted from constrained local-density-approximation (LDA) pseudopotential calculations. The single-particle excitation spectrum of the model has been calculated using an exact-diagonalization technique to help determine the relevant interaction terms. It is shown that the intersite interaction between the nearest-neighbour Ga sites plays the key role in determining the insulating nature of the system and must be included in the model, in contrast to suggestions of some previous work. Our results show that a reliable mapping of LDA results onto an effective model Hamiltonian can be achieved by combining constrained LDA calculations for the Hamiltonian parameters and many-body calculations of the single-particle excitation spectrum for identifying relevant interaction terms. (author)

  19. Radiant Heat Transfer in Reusable Surface Insulation

    Science.gov (United States)

    Hughes, T. A.; Linford, R. M. F.; Chmitt, R. J.; Christensen, H. E.

    1973-01-01

    During radiant testing of mullite panels, temperatures in the insulation and support structure exceeded those predicted on the basis of guarded hot plate thermal conductivity tests. Similar results were obtained during arc tunnel tests of mullite specimens. The differences between effective conductivity and guarded hot plate values suggested that radiant transfer through the mullite was occurring. To study the radiant transport, measurements were made of the infrared transmission through various insulating materials and fibers of interest to the shuttle program, using black body sources over the range of 780 to 2000 K. Experimental data were analyzed and scattering coefficients were derived for a variety of materials, fiber diameters, and source temperature.

  20. The infrared properties of reusable surface insulations.

    Science.gov (United States)

    Schmitt, R. J.; Linford, R. M. F.; Dillow, C. F.; Hughes, T. A.

    1973-01-01

    The total infrared scattering and absorption cross sections of both flexible and rigidized high temperature fibrous insulations have been measured. The methods for accomplishing these measurements are described. Infrared reflection and transmission spectra were obtained to study the dependence of the total cross sections on the spectral characteristics of the transported radiation. These results are applied to steady-state effective thermal conductivity measurements via a four-flux model of radiative heat transfer to separate the radiative component and to calculate the effective thermal conductivity under transient heating conditions. Data for both silica and mullite fibers are presented.

  1. Ionization by ion impact at grazing incidence on insulator surface

    CERN Document Server

    Martiarena, M L

    2003-01-01

    We have calculated the energy distribution of electrons produced by ionization of the ionic crystal electrons in grazing fast ion-insulator surface collision. The ionized electrons originate in the 2p F sup - orbital. We observe that the binary peak appears as a double change in the slope of the spectra, in the high energy region. The form of the peak is determined by the initial electron distribution and its position will be affected by the binding energy of the 2p F sup - electron in the crystal. This BEP in insulator surfaces will appear slightly shifted to the low energy side with respect the ion-atom one.

  2. Peierls instability as the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers

    Science.gov (United States)

    Kang, Myung Ho; Kwon, Se Gab; Jung, Sung Chul

    2018-03-01

    Density functional theory (DFT) calculations are used to investigate the insulating origin of the Na/Si(111)-(3 × 1) surface with a Na coverage of 2/3 monolayers. In the coverage definition, one monolayer refers to one Na atom per surface Si atom, so this surface contains an odd number of electrons (i.e., three Si dangling-bond electrons plus two Na electrons) per 3 × 1 unit cell. Interestingly, this odd-electron surface has been ascribed to a Mott-Hubbard insulator to account for the measured insulating band structure with a gap of about 0.8 eV. Here, we instead propose a Peierls instability as the origin of the experimental band gap. The concept of Peierls instability is fundamental in one-dimensional metal systems but has not been taken into account in previous studies of this surface. Our DFT calculations demonstrate that the linear chain structure of Si dangling bonds in this surface is energetically unstable with respect to a × 2 buckling modulation, and the buckling-induced band gap of 0.79 eV explains well the measured insulating nature.

  3. Theory of bulk-surface coupling in topological insulator films

    Science.gov (United States)

    Saha, Kush; Garate, Ion

    2014-12-01

    We present a quantitative microscopic theory of the disorder- and phonon-induced coupling between surface and bulk states in doped topological insulator films. We find a simple mathematical structure for the surface-to-bulk scattering matrix elements and confirm the importance of bulk-surface coupling in transport and photoemission experiments, assessing its dependence on temperature, carrier density, film thickness, and particle-hole asymmetry.

  4. Molecule scattering from insulator and metal surfaces

    International Nuclear Information System (INIS)

    Moroz, Iryna; Ambaye, Hailemariam; Manson, J R

    2004-01-01

    Calculations are carried out and compared with data for the scattering of CH 4 molecules from a LiF(001) surface and for O 2 scattering from Al(111). The theory is a mixed classical-quantum formalism that includes energy and momentum transfers between the surface and projectile for translational and rotational motions as well as internal mode excitation of the projectile molecule. The translational and rotational degrees of freedom couple most strongly to multiphonon excitations of the surface and are treated with classical dynamics. Internal vibrational excitations of the molecules are treated with a semiclassical formalism with extension to arbitrary numbers of modes and arbitrary quantum numbers. Calculations show good agreement for the dependence on incident translational energy, incident beam angle and surface temperature when compared with data for energy-resolved intensity spectra and angular distributions

  5. Nanoscale electron transport at the surface of a topological insulator

    Science.gov (United States)

    Bauer, Sebastian; Bobisch, Christian A.

    2016-04-01

    The use of three-dimensional topological insulators for disruptive technologies critically depends on the dissipationless transport of electrons at the surface, because of the suppression of backscattering at defects. However, in real devices, defects are unavoidable and scattering at angles other than 180° is allowed for such materials. Until now, this has been studied indirectly by bulk measurements and by the analysis of the local density of states in close vicinity to defect sites. Here, we directly measure the nanoscale voltage drop caused by the scattering at step edges, which occurs if a lateral current flows along a three-dimensional topological insulator. The experiments were performed using scanning tunnelling potentiometry for thin Bi2Se3 films. So far, the observed voltage drops are small because of large contributions of the bulk to the electronic transport. However, for the use of ideal topological insulating thin films in devices, these contributions would play a significant role.

  6. Quantum reflection of fast atoms from insulator surfaces: Eikonal description

    Energy Technology Data Exchange (ETDEWEB)

    Gravielle, M S; Miraglia, J E, E-mail: msilvia@iafe.uba.a, E-mail: miraglia@iafe.uba.a [Instituto de Astronomia y Fisica del Espacio, CONICET, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina) and Dpto. de Fisica, FCEN, Universidad de Buenos Aires (Argentina)

    2009-11-01

    Interference effects recently observed in grazing scattering of swift atoms from insulator surfaces are studied within a distorted-wave method - the surface eikonal approximation. This approach makes use of the eikonal wave function, involving axial channeled trajectories. The theory is applied to helium atoms colliding with a LiF(001) surface along low-index crystallographic directions. The roles played by the projectile polarization and the surface rumpling are investigated, finding that both effects are important for the description of the experimental projectile distributions.

  7. Single atom anisotropic magnetoresistance on a topological insulator surface

    KAUST Repository

    Narayan, Awadhesh

    2015-03-12

    © 2015 IOP Publishing Ltd and Deutsche Physikalische Gesellschaft. We demonstrate single atom anisotropic magnetoresistance on the surface of a topological insulator, arising from the interplay between the helical spin-momentum-locked surface electronic structure and the hybridization of the magnetic adatom states. Our first-principles quantum transport calculations based on density functional theory for Mn on Bi2Se3 elucidate the underlying mechanism. We complement our findings with a two dimensional model valid for both single adatoms and magnetic clusters, which leads to a proposed device setup for experimental realization. Our results provide an explanation for the conflicting scattering experiments on magnetic adatoms on topological insulator surfaces, and reveal the real space spin texture around the magnetic impurity.

  8. Ferromagnetic-insulators-modulated transport properties on the surface of a topological insulator

    International Nuclear Information System (INIS)

    Guo Jun-Ji; Liao Wen-Hu

    2014-01-01

    Transport properties on the surface of a topological insulator (TI) under the modulation of a two-dimensional (2D) ferromagnet/ferromagnet junction are investigated by the method of wave function matching. The single ferromagnetic barrier modulated transmission probability is expected to be a periodic function of the polarization angle and the planar rotation angle, that decreases with the strength of the magnetic proximity exchange increasing. However, the transmission probability for the double ferromagnetic insulators modulated n—n junction and n—p junction is not a periodic function of polarization angle nor planar rotation angle, owing to the combined effects of the double ferromagnetic insulators and the barrier potential. Since the energy gap between the conduction band and the valence band is narrowed and widened respectively in ranges of 0 ≤ θ < π/2 and π/2 < θ ≤ π, the transmission probability of the n—n junction first increases rapidly and then decreases slowly with the increase of the magnetic proximity exchange strength. While the transmission probability for the n—p junction demonstrates an opposite trend on the strength of the magnetic proximity exchange because the band gaps contrarily vary. The obtained results may lead to the possible realization of a magnetic/electric switch based on TIs and be useful in further understanding the surface states of TIs

  9. Electrospinning onto Insulating Substrates by Controlling Surface Wettability and Humidity

    Science.gov (United States)

    Choi, WooSeok; Kim, Geon Hwee; Shin, Jung Hwal; Lim, Geunbae; An, Taechang

    2017-11-01

    We report a simple method for electrospinning polymers onto flexible, insulating substrates by controlling the wettability of the substrate surface. Water molecules were adsorbed onto the surface of a hydrophilic polymer substrate by increasing the local humidity around the substrate. The adsorbed water was used as the ground electrode for electrospinning. The electrospun fibers were deposited only onto hydrophilic areas of the substrate, allowing for patterning through wettability control. Direct writing of polymer fiber was also possible through near-field electrospinning onto a hydrophilic surface.

  10. Surfaces and slabs of fractional topological insulator heterostructures

    Science.gov (United States)

    Sahoo, Sharmistha; Sirota, Alexander; Cho, Gil Young; Teo, Jeffrey C. Y.

    2017-10-01

    Fractional topological insulators (FTIs) are electronic topological phases in (3 +1 ) dimensions enriched by time reversal (TR) and charge U (1 ) conservation symmetries. We focus on the simplest series of fermionic FTIs, whose bulk quasiparticles consist of deconfined partons that carry fractional electric charges in integral units of e*=e /(2 n +1 ) and couple to a discrete Z2 n +1 gauge theory. We propose massive symmetry preserving or breaking FTI surface states. Combining the long-ranged entangled bulk with these topological surface states, we deduce the novel topological order of quasi-(2 +1 ) -dimensional FTI slabs as well as their corresponding edge conformal field theories.

  11. Surface and bulk MHD instabilities due to insulator coating imperfections

    International Nuclear Information System (INIS)

    Xu Zengyu; Reed, C.B.; Pan Chuanjie

    2002-01-01

    Experiments were performed using copper electrodes inserted into the wall of a perfectly insulated duct to simulate insulator coating flaking or cracking. The results show that surface electric potential U and MHD pressure drop ΔP exhibit a non-monotonic behavior with increasing V 0 , while the magnetic field B 0 is held constant. Additional experiments were also performed keeping all external experimental conditions fixed while measuring the change of U, V 0 , B 0 , and ΔP with increasing time. It was found that while all external experimental conditions were kept constant, the system changed by itself and U, V 0 and ΔP exhibited a non-monotonic behavior with increasing time. The results seem contrary to the law of ΔP∝V 0 B 0 n , but are consistent with conservation of energy, which implies that the change is due to some inherent feature of the system, or possibly instabilities, which may occur due to insulator coating imperfections

  12. Strong correlation effects on surfaces of topological insulators via holography

    Science.gov (United States)

    Seo, Yunseok; Song, Geunho; Sin, Sang-Jin

    2017-07-01

    We investigate the effects of strong correlation on the surface state of a topological insulator (TI). We argue that electrons in the regime of crossover from weak antilocalization to weak localization are strongly correlated, and calculate the magnetotransport coefficients of TIs using the gauge-gravity principle. Then, we examine the magnetoconductivity (MC) formula and find excellent agreement with the data of chrome-doped Bi2Te3 in the crossover regime. We also find that the cusplike peak in MC at low doping is absent, which is natural since quasiparticles disappear due to the strong correlation.

  13. Absorption of surface acoustic waves by topological insulator thin films

    International Nuclear Information System (INIS)

    Li, L. L.; Xu, W.

    2014-01-01

    We present a theoretical study on the absorption of the surface acoustic waves (SAWs) by Dirac electrons in topological insulator (TI) thin films (TITFs). We find that due to momentum and energy conservation laws, the absorption of the SAWs in TITFs can only be achieved via intra-band electronic transitions. The strong absorption can be observed up to sub-terahertz frequencies. With increasing temperature, the absorption intensity increases significantly and the cut-off frequency is blue-shifted. More interestingly, we find that the absorption of the SAWs by the TITFs can be markedly enhanced by the tunable subgap in the Dirac energy spectrum of the TI surface states. Such a subgap is absent in conventional two-dimensional electron gases (2DEGs) and in the gapless Dirac 2DEG such as graphene. This study is pertinent to the exploration of the acoustic properties of TIs and to potential application of TIs as tunable SAW devices working at hypersonic frequencies

  14. Mott Transition of Fermionic Atoms in a Three-Dimensional Optical Trap

    International Nuclear Information System (INIS)

    Helmes, R. W.; Rosch, A.; Costi, T. A.

    2008-01-01

    We study theoretically the Mott metal-insulator transition for a system of fermionic atoms confined in a three-dimensional optical lattice and a harmonic trap. We describe an inhomogeneous system of several thousand sites using an adaptation of dynamical mean-field theory solved efficiently with the numerical renormalization group method. Above a critical value of the on-site interaction, a Mott-insulating phase appears in the system. We investigate signatures of the Mott phase in the density profile and in time-of-flight experiments

  15. The Mott localization and magnetic properties in condensed fermions systems

    International Nuclear Information System (INIS)

    Wojcik, W.

    1995-01-01

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs

  16. Transport on the surface of a topological insulator

    International Nuclear Information System (INIS)

    Vargiamidis, V.; Vasilopoulos, P.

    2014-01-01

    We study theoretically dc and ac transport on the surface of a three-dimensional topological insulator when its time-reversal symmetry is broken. Starting with a Kubo formula, we derive an explicit expression for the dc Hall conductivity, valid for finite temperatures. At zero temperature this expression gives the dc half-quantum Hall conductivity, provided the Fermi level lies in the gap. Corrections when the Fermi level is outside the gap and scattering by impurities are quantified. The longitudinal conductivity is also examined. At finite frequencies, we find a modified Drude term in σ xx (ω) and logarithmic, frequency-dependent corrections in σ yx (ω). The ac Hall conductivity exhibits a robust logarithmic singularity for excitation energies equal to the gapwidth. For these energies, we also find that the power spectrum, which is pertinent to optical experiments, exhibits drastic increase. The Hall conductivity remains almost unaffected for temperatures up to approximately 300 K

  17. Experimental studies of ions and atoms interaction with insulating surface

    International Nuclear Information System (INIS)

    Villette, J.

    2000-10-01

    Grazing collisions ( + , Ne + , Ne 0 , Na + on LiF (001) single crystal, an ionic insulator, are investigated by a time of flight technique. The incident beam is chopped and the scattered particles are collected on a position sensitive detector providing differential cross section while the time of flight gives the energy loss. Deflection plates allow the charge state analysis. Secondary electrons are detected in coincidence allowing direct measurements of electron emission yield, angular and energetic distribution through time of flight measurements. The target electronic structure characterized by a large band gap, governs the collisional processes: charge exchange, electronic excitations and electron emission. In particular, these studies show that the population of local target excitations surface excitons is the major contribution to the kinetic energy transfer (stopping power). Auger neutralization of Ne + and He + ions reveals the population of quasi-molecular excitons, an exciton bound on two holes. Referenced in the literature as trion. A direct energy balance determines the binding energy associated with these excited states of the surface. Besides these electronic energy loss processes, two nuclear energy loss mechanisms are characterized. These processes imply momentum transfer to individual target atoms during close binary collisions or, if the projectile is charged, to collective mode of optical phonons induced by the projectile coulomb field. The effect of the temperature on the scattering profile, the contribution of topological surface defects to the energy loss profile and to skipping motion on the surface are analyzed in view of classical trajectory simulations. (author)

  18. Effects of surface exchange anisotropy in Heisenberg ferromagnetic insulators

    International Nuclear Information System (INIS)

    Selzer, S.; Majlis, N.

    1982-03-01

    We consider an fcc semi-infinite ferromagnetic insulator displaying an anisotropic exchange interaction between spins on the (111) surface plane of the form Jsub(parallel)[Ssub(i)sup(x)Ssub(j)sup(x)+Ssub(i)sup(y)Ssub(j)sup(y )+etaSsub(i)sup(z)Ssub(j)sup(z)], assuming all other interactions isotropic. A self-consistent RPA calculation is performed, with a Green function method valid for any spin S, up to the bulk transition temperature Tsub(c)sup(b), by imposing that the magnetization of the third layer equals the bulk value. For eta sufficiently large, the surface magnetization is non-zero for T>Tsub(c)sup(b), up to a transition temperature Tsub(c)sup(s)(eta) whenever eta>=etasub(c)>1, where Tsub(c)sup(s)(etasub(c))=Tsub(c)sup(b). For T>Tsub(c)sup(b) the system is equivalent to a film of three layers, where the magnetization of the third one is identically zero as a boundary condition. A discontinuity of the derivative in the curve of the magnetization of the first two layers vs. temperature is found at Tsub(c)sup(b). The results show clearly a cross-over from Heisenberg to Ising behaviour at the surface. (author)

  19. Surface plasmon resonance phenomenon of the insulating state polyaniline

    Energy Technology Data Exchange (ETDEWEB)

    Umiati, Ngurah Ayu Ketut, E-mail: ngurahayuketutumiati@gmail.com [Jurusan Fisika FMIPA UGM, Sekip Utara Yogyakarta, 55281 (Indonesia); Jurusan Fisika FMIPA Universitas Diponegoro, Jalan Prof. Soedarto, SH Tembalang Semarang 50275 (Indonesia); Triyana, Kuwat; Kamsul [Jurusan Fisika FMIPA UGM, Sekip Utara Yogyakarta, 55281 (Indonesia)

    2015-04-16

    Surface Plasmon Resonance (SPR) phenomenon of the insulating polyaniline (PANI) is has been observed. Surface Plasmon (SP) is the traveled electromagnetic wave that passes through the interface of dielectric metal and excited by attenuated total reflection (ATR) method in Kretschmannn configuration (Au-PANI prism). The resonance condition is observed through the angle of SPR in such condition that SP wave is coupled by the evanescent constant of laser beam. In this research, the laser beam was generated by He–Ne and its wavelength (λ) was 632,8 nm. SPR curve is obtained through observation of incidence angles of the laser beam in prism. SPR phenomenon at the boundary between Au – PANI layer has showed by reflection dip when the laser beam passes through the prism. In this early study, the observation was carried out through simulation Winspall 3.02 software and preliminary compared with some experimental data reported in other referred literatures. The results shows that the optimum layer of Au and polyaniline are 50 and 1,5 nm thick respectively. Our own near future experimental work would be further performed and reported elsewhere.

  20. Some characteristics of metal migration in or on the surface of insulators

    International Nuclear Information System (INIS)

    Shields, R.B.

    1978-03-01

    This report reviews the migration of metals, principally silver, in or on the surface of insulating materials, by electrolytic processes. These processes are described for various metals, insulating materials and physical conditions, with numerous examples from the literature. While it is concluded that the only sure way to prevent degradation of insulation due to metal migration is to avoid the use of migration-prone metals, some other measures are mentioned which have been reported to reduce the extent of the growth. (author)

  1. Spectral properties near the Mott transition in the two-dimensional Hubbard model

    Science.gov (United States)

    Kohno, Masanori

    2013-03-01

    Single-particle excitations near the Mott transition in the two-dimensional (2D) Hubbard model are investigated by using cluster perturbation theory. The Mott transition is characterized by the loss of the spectral weight from the dispersing mode that leads continuously to the spin-wave excitation of the Mott insulator. The origins of the dominant modes of the 2D Hubbard model near the Mott transition can be traced back to those of the one-dimensional Hubbard model. Various anomalous spectral features observed in cuprate high-temperature superconductors, such as the pseudogap, Fermi arc, flat band, doping-induced states, hole pockets, and spinon-like and holon-like branches, as well as giant kink and waterfall in the dispersion relation, are explained in a unified manner as properties near the Mott transition in a 2D system.

  2. Quantum magnetotransport for the surface states of three-dimensional topological insulators in the presence of a Zeeman field

    KAUST Repository

    Tahir, Muhammad; Schwingenschlö gl, Udo

    2013-01-01

    We show that the surface states of magnetic topological insulators realize an activated behavior and Shubnikov de Haas oscillations. Applying an external magnetic field perpendicular to the surface of the topological insulator in the presence

  3. Mott-Hubbard transition and Anderson localization: A generalized dynamical mean-field theory approach

    International Nuclear Information System (INIS)

    Kuchinskii, E. Z.; Nekrasov, I. A.; Sadovskii, M. V.

    2008-01-01

    The DOS, the dynamic (optical) conductivity, and the phase diagram of a strongly correlated and strongly disordered paramagnetic Anderson-Hubbard model are analyzed within the generalized dynamical mean field theory (DMFT + Σ approximation). Strong correlations are taken into account by the DMFT, and disorder is taken into account via an appropriate generalization of the self-consistent theory of localization. The DMFT effective single-impurity problem is solved by a numerical renormalization group (NRG); we consider the three-dimensional system with a semielliptic DOS. The correlated metal, Mott insulator, and correlated Anderson insulator phases are identified via the evolution of the DOS and dynamic conductivity, demonstrating both the Mott-Hubbard and Anderson metal-insulator transition and allowing the construction of the complete zero-temperature phase diagram of the Anderson-Hubbard model. Rather unusual is the possibility of a disorder-induced Mott insulator-to-metal transition

  4. Characteristics of the Mott transition and electronic states of high-temperature cuprate superconductors from the perspective of the Hubbard model

    Science.gov (United States)

    Kohno, Masanori

    2018-04-01

    A fundamental issue of the Mott transition is how electrons behaving as single particles carrying spin and charge in a metal change into those exhibiting separated spin and charge excitations (low-energy spin excitation and high-energy charge excitation) in a Mott insulator. This issue has attracted considerable attention particularly in relation to high-temperature cuprate superconductors, which exhibit electronic states near the Mott transition that are difficult to explain in conventional pictures. Here, from a new viewpoint of the Mott transition based on analyses of the Hubbard model, we review anomalous features observed in high-temperature cuprate superconductors near the Mott transition.

  5. Nevill Mott reminiscences and appreciations

    CERN Document Server

    Davis, E A

    1998-01-01

    Sir Nevill Mott was Britain''s last Winner of the Nobel Prize for Physics. This is a tribute to the life and work of Nobel Laureate Nevill Mott, a hugely admired and appreciated man, and one of this countries greatest ever scientists. It includes contributions from over 80 of his friends, family and colleagues, full of anecdotes and appreciations for this collossus of modern physics.

  6. Current-induced switching of magnetic molecules on topological insulator surfaces

    Science.gov (United States)

    Locane, Elina; Brouwer, Piet W.

    2017-03-01

    Electrical currents at the surface or edge of a topological insulator are intrinsically spin polarized. We show that such surface or edge currents can be used to switch the orientation of a molecular magnet weakly coupled to the surface or edge of a topological insulator. For the edge of a two-dimensional topological insulator as well as for the surface of a three-dimensional topological insulator the application of a well-chosen surface or edge current can lead to a complete polarization of the molecule if the molecule's magnetic anisotropy axis is appropriately aligned with the current direction. For a generic orientation of the molecule a nonzero but incomplete polarization is obtained. We calculate the probability distribution of the magnetic states and the switching rates as a function of the applied current.

  7. Stability of alternating current discharges between water drops on insulation surfaces

    International Nuclear Information System (INIS)

    Rowland, S M; Lin, F C

    2006-01-01

    Discharges between water drops are important in the ageing of hydrophobic outdoor insulators. They may also be important in the processes leading up to flashover of these insulators in high pollution conditions. This paper considers discharges between drops when a limited alternating current is available, as experienced by an ageing insulator in service. A phenomenon is identified in which the length of a discharge between two drops is reduced through a particular type of distortion of the drops. This is visually characterized as a liquid protrusion from each of a pair of water drops along the insulator surface. This process is distinct from vibration of the drops, general distortion of their shape and the very fast emission of jet streams seen in very high fields. The process depends upon the discharge current, the resistivity of the moisture and the hydrophobicity of the insulation surface

  8. Anomalous Quasiparticle Symmetries and Non-Abelian Defects on Symmetrically Gapped Surfaces of Weak Topological Insulators.

    Science.gov (United States)

    Mross, David F; Essin, Andrew; Alicea, Jason; Stern, Ady

    2016-01-22

    We show that boundaries of 3D weak topological insulators can become gapped by strong interactions while preserving all symmetries, leading to Abelian surface topological order. The anomalous nature of weak topological insulator surfaces manifests itself in a nontrivial action of symmetries on the quasiparticles; most strikingly, translations change the anyon types in a manner impossible in strictly 2D systems with the same symmetry. As a further consequence, screw dislocations form non-Abelian defects that trap Z_{4} parafermion zero modes.

  9. Heat Transfer Measurement and Modeling in Rigid High-Temperature Reusable Surface Insulation Tiles

    Science.gov (United States)

    Daryabeigi, Kamran; Knutson, Jeffrey R.; Cunnington, George R.

    2011-01-01

    Heat transfer in rigid reusable surface insulations was investigated. Steady-state thermal conductivity measurements in a vacuum were used to determine the combined contribution of radiation and solid conduction components of heat transfer. Thermal conductivity measurements at higher pressures were then used to estimate the effective insulation characteristic length for gas conduction modeling. The thermal conductivity of the insulation can then be estimated at any temperature and pressure in any gaseous media. The methodology was validated by comparing estimated thermal conductivities with published data on a rigid high-temperature silica reusable surface insulation tile. The methodology was also applied to the alumina enhanced thermal barrier tiles. Thermal contact resistance for thermal conductivity measurements on rigid tiles was also investigated. A technique was developed to effectively eliminate thermal contact resistance on the rigid tile s cold-side surface for the thermal conductivity measurements.

  10. He atom surface spectroscopy: Surface lattice dynamics of insulators, metals and metal overlayers

    International Nuclear Information System (INIS)

    1990-01-01

    During the first three years of this grant (1985--1988) the effort was devoted to the construction of a state-of-the-art He atom scattering (HAS) instrument which would be capable of determining the structure and dynamics of metallic, semiconductor or insulator crystal surfaces. The second three year grant period (1988--1991) has been dedicated to measurements. The construction of the instrument went better than proposed; it was within budget, finished in the proposed time and of better sensitivity and resolution than originally planned. The same success has been carried over to the measurement phase where the concentration has been on studies of insulator surfaces, as discussed in this paper. The experiments of the past three years have focused primarily on the alkali halides with a more recent shift to metal oxide crystal surfaces. Both elastic and inelastic scattering experiments were carried out on LiF, NaI, NaCl, RbCl, KBr, RbBr, RbI, CsF, CsI and with some preliminary work on NiO and MgO

  11. He atom-surface scattering: Surface dynamics of insulators, overlayers and crystal growth

    International Nuclear Information System (INIS)

    1992-01-01

    Investigations in this laboratory have focused on the surface structure and dynamics of ionic insulators and on epitaxial growth onto alkali halide crystals. In the later the homoepitaxial growth of NaCl/NaCl(001) and the heteroepitaxial growth of KBr/NaCl(001), NaCl/KBr(001) and KBr/RbCl(001) have been studied by monitoring the specular He scattering as a function of the coverage and by measuring the angular and energy distributions of the scattered He atoms. These data provide information on the surface structure, defect densities, island sizes and surface strain during the layer-by-layer growth. The temperature dependence of these measurements also provides information on the mobilities of the admolecules. He atom scattering is unique among surface probes because the low-energy, inert atoms are sensitive only to the electronic structure of the topmost surface layer and are equally applicable to all crystalline materials. It is proposed for the next year to exploit further the variety of combinations possible with the alkali halides in order to carry out a definitive study of epitaxial growth in the ionic insulators. The work completed so far, including measurements of the Bragg diffraction and surface dispersion at various stages of growth, appears to be exceptionally rich in detail, which is particularly promising for theoretical modeling. In addition, because epitaxial growth conditions over a wide range of lattice mismatches is possible with these materials, size effects in growth processes can be explored in great depth. Further, as some of the alkali halides have the CsCl structure instead of the NaCl structure, we can investigate the effects of the heteroepitaxy with materials having different lattice preferences. Finally, by using co-deposition of different alkali halides, one can investigate the formation and stability of alloys and even alkali halide superlattices

  12. Surface and Bulk Nanostructuring of Insulators by Ultrashort Laser Pulses

    Science.gov (United States)

    2017-04-05

    non perturbative effects leading to HHG. 15. SUBJECT TERMS Nanostructuring of bulk insulators, sub-picosecond electronic and structural events , photo...time, the charge density oscillations follow the time periodicity of the incident radiation. These transient charge oscillations are exclusively due...As in section II photoexcitation and the dielectric response of laser-irradiated diamond are treated in independent particle approximation based on the

  13. Quantum oscillations in insulators with neutral Fermi surfaces

    Science.gov (United States)

    Sodemann, Inti; Chowdhury, Debanjan; Senthil, T.

    2018-02-01

    We develop a theory of quantum oscillations in insulators with an emergent Fermi sea of neutral fermions minimally coupled to an emergent U(1 ) gauge field. As pointed out by Motrunich [Phys. Rev. B 73, 155115 (2006), 10.1103/PhysRevB.73.155115], in the presence of a physical magnetic field the emergent magnetic field develops a nonzero value leading to Landau quantization for the neutral fermions. We focus on the magnetic field and temperature dependence of the analog of the de Haas-van Alphen effect in two and three dimensions. At temperatures above the effective cyclotron energy, the magnetization oscillations behave similarly to those of an ordinary metal, albeit in a field of a strength that differs from the physical magnetic field. At low temperatures, the oscillations evolve into a series of phase transitions. We provide analytical expressions for the amplitude and period of the oscillations in both of these regimes and simple extrapolations that capture well their crossover. We also describe oscillations in the electrical resistivity of these systems that are expected to be superimposed with the activated temperature behavior characteristic of their insulating nature and discuss suitable experimental conditions for the observation of these effects in mixed-valence insulators and triangular lattice organic materials.

  14. Dynamical analysis of surface-insulated planar wire array Z-pinches

    Science.gov (United States)

    Li, Yang; Sheng, Liang; Hei, Dongwei; Li, Xingwen; Zhang, Jinhai; Li, Mo; Qiu, Aici

    2018-05-01

    The ablation and implosion dynamics of planar wire array Z-pinches with and without surface insulation are compared and discussed in this paper. This paper first presents a phenomenological model named the ablation and cascade snowplow implosion (ACSI) model, which accounts for the ablation and implosion phases of a planar wire array Z-pinch in a single simulation. The comparison between experimental data and simulation results shows that the ACSI model could give a fairly good description about the dynamical characteristics of planar wire array Z-pinches. Surface insulation introduces notable differences in the ablation phase of planar wire array Z-pinches. The ablation phase is divided into two stages: insulation layer ablation and tungsten wire ablation. The two-stage ablation process of insulated wires is simulated in the ACSI model by updating the formulas describing the ablation process.

  15. Cork-resin ablative insulation for complex surfaces and method for applying the same

    Science.gov (United States)

    Walker, H. M.; Sharpe, M. H.; Simpson, W. G. (Inventor)

    1980-01-01

    A method of applying cork-resin ablative insulation material to complex curved surfaces is disclosed. The material is prepared by mixing finely divided cork with a B-stage curable thermosetting resin, forming the resulting mixture into a block, B-stage curing the resin-containing block, and slicing the block into sheets. The B-stage cured sheet is shaped to conform to the surface being insulated, and further curing is then performed. Curing of the resins only to B-stage before shaping enables application of sheet material to complex curved surfaces and avoids limitations and disadvantages presented in handling of fully cured sheet material.

  16. Core-level photoemission revealing the Mott transition

    International Nuclear Information System (INIS)

    Kim, Hyeong-Do; Noh, Han-Jin; Kim, K.H.; Oh, S.-J.

    2005-01-01

    Ru 3d core-level X-ray photoemission spectra of various ruthenates are examined. They show in general two-peak structures, which can be assigned as the screened and unscreened peaks. The screened peak is absent in a Mott insulator, but develops into a main peak as the correlation strength becomes weak. This spectral behavior is well explained by the dynamical mean-field theory calculation for the single-band Hubbard model with the on-site core-hole potential using the exact diagonalization method. The new mechanism of the core-level photoemission satellite can be utilized to reveal the Mott transition phenomenon in various strongly correlated electron systems

  17. He atom-surface scattering: Surface dynamics of insulators, overlayers and crystal growth

    International Nuclear Information System (INIS)

    Safron, S.A.; Skofronick, J.G.

    1994-01-01

    This progress report describes work carried out in the study of surface structure and dynamics of ionic insulators, the microscopic interactions controlling epitaxial growth and the formation of overlayers, and energy exchange in multiphonon surface scattering. The approach used is to employ high resolution helium atom scattering to study the geometry and structural features of the surfaces. Experiments have been carried out on the surface dynamics of RbCl and preliminary studies done on CoO and NiO. Epitaxial growth and overlayer dynamics experiments on the systems NaCl/NaCl(001), KBr/NaCl(001), NaCl/KBr(001) and KBr/RbCl(001) have been performed. They have collaborated with two theoretical groups to explore models of overlayer dynamics with which to compare and to interpret their experimental results. They have carried out extensive experiments on the multiphonon scattering of helium atoms from NaCl and, particularly, LiF. Work has begun on self-assembling organic films on gold and silver surfaces (alkyl thiols/Au(111) and Ag(111))

  18. Excitonic condensation for the surface states of topological insulator bilayers

    International Nuclear Information System (INIS)

    Wang Zhigang; Fu Zhenguo; Zhang Ping; Hao Ningning

    2012-01-01

    We propose a generic topological insulator bilayer (TIB) system to study the excitonic condensation with self-consistent mean-field (SCMF) theory. We show that the TIB system presents the crossover behavior from the Bardeen-Cooper-Schrieffer (BCS) limit to the Bose-Einstein condensation (BEC) limit. Moreover, in comparison with traditional semiconductor systems, we find that for the present system the superfluid property in the BEC phase is more sensitive to electron-hole density imbalance and the BCS phase is more robust. Applying this TIB model to the Bi 2 Se 3 -family material, we find that the BEC phase is most likely to be observed in experiment. We also calculate the critical temperature for the Bi 2 Se 3 -family TIB system, which is ∼100 K. More interestingly, one can expect this relative high-temperature excitonic condensation, since our calculated SCMF critical temperature is approximately equal to the Kosterlitz-Thouless transition temperature. (paper)

  19. The substrate strain mediated magnetotransport properties of surface states in topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Ning, E-mail: maning@stu.xjtu.edu.cn [Department of Physics, MOE Key Laboratory of Advanced Transducers and Intelligent Control System, Taiyuan University of Technology, Taiyuan 030024 (China); Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Zhang, Shengli, E-mail: zhangsl@mail.xjtu.edu.cn [Department of Applied Physics, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi' an Jiaotong University, Xi' an 710049 (China); Liu, Daqing, E-mail: liudq@cczu.edu.cn [School of Mathematics and Physics, Changzhou University, Changzhou 213164 (China)

    2016-10-14

    Recent experiments reveal that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). We further explore the strain effects on magnetotransport in HgTe at magnetic field. We find that the substrate strain associated with the surface index of carriers, can remove the surfaces degeneracy in Landau levels. This accordingly induces the well separated surface quantum Hall plateaus and Shubnikov–de Haas oscillations. These results can be used to generate and detect surface polarization, not only in HgTe but also in a broad class of TIs, which would be very great news for electronic applications of TIs. - Highlights: • We explore the strain mediated magnetotransport in topological insulators. • We analytically derive the zero frequency magnetoconductivity. • The strain removes the surface degeneracy in Landau levels. • The strain gives rise to the splitting and mixture of Landau levels. • The strain leads to the surface asymmetric spectrum of conductivity.

  20. Strong Energy-momentum Dispersion of Phonon Dressed Carriers in the Lightly Doped Band Insulator SrTiO3

    International Nuclear Information System (INIS)

    Meevasana, Warawat

    2010-01-01

    Much progress has been made recently in the study of the effects of electron-phonon (el-ph) coupling in doped insulators using angle resolved photoemission (ARPES), yielding evidence for the dominant role of el-ph interactions in underdoped cuprates. As these studies have been limited to doped Mott insulators, the important question arises how this compares with doped band insulators where similar el-ph couplings should be at work. The archetypical case is the perovskite SrTiO 3 (STO), well known for its giant dielectric constant of 10000 at low temperature, exceeding that of La 2 CuO 4 by a factor of 500. Based on this fact, it has been suggested that doped STO should be the archetypical bipolaron superconductor. Here we report an ARPES study from high-quality surfaces of lightly doped SrTiO 3 . Comparing to lightly doped Mott insulators, we find the signatures of only moderate electron-phonon coupling: a dispersion anomaly associated with the low frequency optical phonon with a λ(prime) ∼ 0.3 and an overall bandwidth renormalization suggesting an overall λ(prime) ∼ 0.7 coming from the higher frequency phonons. Further, we find no clear signatures of the large pseudogap or small polaron phenomena. These findings demonstrate that a large dielectric constant itself is not a good indicator of el-ph coupling and highlight the unusually strong effects of the el-ph coupling in doped Mott insulators.

  1. Two-dimensional simulation research of secondary electron emission avalanche discharge on vacuum insulator surface

    Science.gov (United States)

    Cai, Libing; Wang, Jianguo; Zhu, Xiangqin; Wang, Yue; Zhang, Dianhui

    2015-01-01

    Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data.

  2. Two-dimensional simulation research of secondary electron emission avalanche discharge on vacuum insulator surface

    International Nuclear Information System (INIS)

    Cai, Libing; Wang, Jianguo; Zhu, Xiangqin; Wang, Yue; Zhang, Dianhui

    2015-01-01

    Based on the secondary electron emission avalanche (SEEA) model, the SEEA discharge on the vacuum insulator surface is simulated by using a 2D PIC-MCC code developed by ourselves. The evolutions of the number of discharge electrons, insulator surface charge, current, and 2D particle distribution are obtained. The effects of the strength of the applied electric field, secondary electron yield coefficient, rise time of the pulse, length of the insulator on the discharge are investigated. The results show that the number of the SEEA electrons presents a quadratic dependence upon the applied field strength. The SEEA current, which is on the order of Ampere, is directly proportional to the field strength and secondary electron yield coefficient. Finally, the electron-stimulated outgassing is included in the simulation code, and a three-phase discharge curve is presented by the simulation, which agrees with the experimental data

  3. Linear magnetoresistance and surface to bulk coupling in topological insulator thin films.

    Science.gov (United States)

    Singh, Sourabh; Gopal, R K; Sarkar, Jit; Pandey, Atul; Patel, Bhavesh G; Mitra, Chiranjib

    2017-12-20

    We explore the temperature dependent magnetoresistance of bulk insulating topological insulator thin films. Thin films of Bi 2 Se 2 Te and BiSbTeSe 1.6 were grown using the pulsed laser deposition technique and subjected to transport measurements. Magnetotransport measurements indicate a non-saturating linear magnetoresistance (LMR) behavior at high magnetic field values. We present a careful analysis to explain the origin of LMR taking into consideration all the existing models of LMR. Here we consider that the bulk insulating states and the metallic surface states constitute two parallel conduction channels. Invoking this, we were able to explain linear magnetoresistance behavior as a competition between these parallel channels. We observe that the cross-over field, where LMR sets in, decreases with increasing temperature. We propose that this cross-over field can be used phenomenologically to estimate the strength of surface to bulk coupling.

  4. Electron emission from insulator surfaces by ultra-short laser pulses

    Energy Technology Data Exchange (ETDEWEB)

    Acuna, M; Gravielle, M S, E-mail: mario@iafe.uba.a, E-mail: msilvia@iafe.uba.a [Institutes de AstronomIa y Fisica del Espacio, Casilla de Correo 67, Sucursal 28, 1428 Buenos Aires (Argentina)

    2009-11-01

    Photoelectron emission from insulator surfaces induced by ultra-short laser pulses is studied within a time-dependent distorted wave method. The proposed approach combines the Volkov phase, which takes into account the laser interaction, with a simple representation of the unperturbed surface states, given by the Tight-binding method. The model is applied to evaluate the photoelectron emission from a LiF(001) surface, finding effects of interference produced by the crystal lattice.

  5. pH Sensitivity of Si-C Linked Organic Monolayers on Crystalline Silicon Surfaces: Titration Experiments, Mott Schottky Analysis and Site-Binding Modeling

    NARCIS (Netherlands)

    Faber, E.J.; Sparreboom, W.; Groeneveld, W.; Smet, de L.C.P.M.; Bomer, J.; Olthuis, W.; Zuilhof, H.; Sudhölter, E.J.R.; Bergveld, P.; Berg, van den A.

    2007-01-01

    The electrochemical behavior of SiC linked organic monolayers is studied in electrolyte-insulator-Si devices, under conditions normally encountered in potentiometric biosensors, to gain fundamental knowledge on the behavior of such Si electrodes under practical conditions. This is done via titration

  6. Pressure-Induced Confined Metal from the Mott Insulator Sr3Ir2O7

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Yang; Yang, Liuxiang; Chen, Cheng-Chien; Kim, Heung-Sik; Han, Myung Joon; Luo, Wei; Feng, Zhenxing; Upton, Mary; Casa, Diego; Kim, Jungho; Gog, Thomas; Zeng, Zhidan; Cao, Gang; Mao, Ho-kwang; van Veenendaal, Michel

    2016-05-24

    The spin-orbit Mott insulator Sr3Ir2O7 provides a fascinating playground to explore insulator-metal transition driven by intertwined charge, spin, and lattice degrees of freedom. Here, we report high-pressure electric resistance and resonant inelastic x-ray scattering measurements on single-crystal Sr3Ir2O7 up to 63-65 GPa at 300 K. The material becomes a confined metal at 59.5 GPa, showing metallicity in the ab plane but an insulating behavior along the c axis. Such an unusual phenomenon resembles the strange metal phase in cuprate superconductors. Since there is no sign of the collapse of spin-orbit or Coulomb interactions in x-ray measurements, this novel insulator-metal transition is potentially driven by a first-order structural change at nearby pressures. Our discovery points to a new approach for synthesizing functional materials.

  7. Sound absorption of low-temperature reusable surface insulation candidate materials

    Science.gov (United States)

    Johnston, J. D.

    1974-01-01

    Sound absorption data from tests of four candidate low-temperature reusable surface insulation materials are presented. Limitations on the use of the data are discussed, conclusions concerning the effective absorption of the materials are drawn, and the relative significance to Vibration and Acoustic Test Facility test planning of the absorption of each material is assessed.

  8. Surface plasmon on topological insulator/dielectric interface enhanced ZnO ultraviolet photoluminescence

    Directory of Open Access Journals (Sweden)

    Zhi-Min Liao

    2012-06-01

    Full Text Available It has recently been predicted that the surface plasmons are allowed to exist on the interface between a topological insulator and vacuum. Surface plasmons can be employed to enhance the optical emission from various illuminants. Here, we study the photoluminescence properties of the ZnO/Bi2Te3 hybrid structures. Thin flakes of Bi2Te3, a typical three-dimensional topological insulator, were prepared on ZnO crystal surface by mechanical exfoliation method. The ultraviolet emission from ZnO was found to be enhanced by the Bi2Te3 thin flakes, which was attributed to the surface plasmon – photon coupling at the Bi2Te3/ZnO interface.

  9. Surface potential measurement of insulators in negative-ion implantation by secondary electron energy-peak shift

    International Nuclear Information System (INIS)

    Nagumo, Shoji; Toyota, Yoshitaka; Tsuji, Hiroshi; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

    1993-01-01

    Negative-ion implantation is expected to realize charge-up free implantation. In this article, about a way to specify surface potential of negative-ion implanted insulator by secondary-electron-energy distribution, its principle and preliminary experimental results are described. By a measuring system with retarding field type energy analyzer, energy distribution of secondary electron from insulator of Fused Quartz in negative-carbon-ion implantation was measured. As a result the peak-shift of its energy distribution resulted according with the surface potential of insulator. It was found that surface potential of insulator is negatively charged by only several volts. Thus, negative-ion implanted insulator reduced its surface charge-up potential (without any electron supply). Therefore negative-ion implantation is considered to be much more effective method than conventional positive-ion implantation. (author)

  10. He atom surface scattering: Surface dynamics of insulators, overlayers and crystal growth

    International Nuclear Information System (INIS)

    1992-01-01

    Investigations have focused primarily on surface structure and dynamics of ionic insulators, epitaxial growth onto alkali halide crystals and multiphoton studies. The surface dynamics of RbCl has been re-examined. We have developed a simple force constant model which provides insight into the dynamics of KBr overlayers on NaCl(001), a system with a large lattice mismatch. The KBr/NaCl(001) results are compared to Na/Cu(001) and NaCl/Ge(001). We have completed epitaxial growth experiments for KBr onto RbCl(001). Slab dynamics calculations using a shell model for this system with very small lattice mismatch are being carried out in collaboration with Professor Manson of Clemson University and with Professor Schroeder in Regensburg, Germany. Extensive experiments on multiphoton scattering of helium atoms onto NaCl and, particularly, LiF have been carried out and the theory has been developed to a rather advanced stage by Professor Manson. This work will permit the extraction of more information from time-of-flight spectra. It is shown that the theoretical model provides a very good description of the multiphoton scattering from organic films. Work has started on self-assembling organic films on gold (alkyl thiols/Au(111)). We have begun to prepare and characterize the gold crystal; one of the group members has spent two weeks at the Oak Ridge National Laboratory learning the proper Au(111) preparation techniques. One of our students has carried out neutron scattering experiments on NiO, measuring both bulk phonon and magnon dispersion curves

  11. Multicharged ion-induced emission from metal- and insulator surfaces related to magnetic fusion research

    Energy Technology Data Exchange (ETDEWEB)

    Winter, H.P. [Technische Univ., Vienna (Austria). Inst. fuer Allgemeine Physik

    1997-01-01

    The edge region of magnetically confined plasmas in thermonuclear fusion experiments couples the hot plasma core with the cold first wall. We consider the dependence of plasma-wall interaction processes on edge plasma properties, with particular emphasis on the role of slow multicharged ions (MCI). After a short survey on the physics of slow MCI-surface interaction we discuss recent extensive studies on MCI-induced electron emission from clean metal surfaces conducted at impact velocities << 1 a.u., from which generally reliable total electron yields can be obtained. We then demonstrate the essentially different role of the MCI charge for electron emission from metallic and insulator surfaces, respectively. Furthermore, we present recent results on slow MCI-induced `potential sputtering` of insulators which, in contrast to the well established kinetic sputtering, already occurs at very low ion impact energy and strongly increases with the MCI charge state. (J.P.N.). 55 refs.

  12. On the nano-hillock formation induced by slow highly charged ions on insulator surfaces

    Science.gov (United States)

    Lemell, C.; El-Said, A. S.; Meissl, W.; Gebeshuber, I. C.; Trautmann, C.; Toulemonde, M.; Burgdörfer, J.; Aumayr, F.

    2007-10-01

    We discuss the creation of nano-sized protrusions on insulating surfaces using slow highly charged ions. This method holds the promise of forming regular structures on surfaces without inducing defects in deeper lying crystal layers. We find that only projectiles with a potential energy above a critical value are able to create hillocks. Below this threshold no surface modification is observed. This is similar to the track and hillock formation induced by swift (˜GeV) heavy ions. We present a model for the conversion of potential energy stored in the projectiles into target-lattice excitations (heat) and discuss the possibility to create ordered structures using the guiding effect observed in insulating conical structures.

  13. Emergent Momentum-Space Skyrmion Texture on the Surface of Topological Insulators

    Science.gov (United States)

    Mohanta, Narayan; Kampf, Arno P.; Kopp, Thilo

    The quantum anomalous Hall effect has been theoretically predicted and experimentally verified in magnetic topological insulators. In addition, the surface states of these materials exhibit a hedgehog-like ``spin'' texture in momentum space. Here, we apply the previously formulated low-energy model for Bi2Se3, a parent compound for magnetic topological insulators, to a slab geometry in which an exchange field acts only within one of the surface layers. In this sample set up, the hedgehog transforms into a skyrmion texture beyond a critical exchange field. This critical field marks a transition between two topologically distinct phases. The topological phase transition takes place without energy gap closing at the Fermi level and leaves the transverse Hall conductance unchanged and quantized to e2 / 2 h . The momentum-space skyrmion texture persists in a finite field range. It may find its realization in hybrid heterostructures with an interface between a three-dimensional topological insulator and a ferromagnetic insulator. The work was supported by the Deutsche Forschungsgemeinschaft through TRR 80.

  14. Dirac spin-orbit torques and charge pumping at the surface of topological insulators

    KAUST Repository

    Ndiaye, Papa Birame

    2017-07-07

    We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

  15. Dirac spin-orbit torques and charge pumping at the surface of topological insulators

    KAUST Repository

    Ndiaye, Papa Birame; Akosa, Collins Ashu; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, Aurelien

    2017-01-01

    We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

  16. Dirac spin-orbit torques and charge pumping at the surface of topological insulators

    Science.gov (United States)

    Ndiaye, Papa B.; Akosa, C. A.; Fischer, M. H.; Vaezi, A.; Kim, E.-A.; Manchon, A.

    2017-07-01

    We address the nature of spin-orbit torques at the magnetic surfaces of topological insulators using the linear-response theory. We find that the so-called Dirac torques in such systems possess a different symmetry compared to their Rashba counterpart, as well as a high anisotropy as a function of the magnetization direction. In particular, the damping torque vanishes when the magnetization lies in the plane of the topological-insulator surface. We also show that the Onsager reciprocal of the spin-orbit torque, the charge pumping, induces an enhanced anisotropic damping. Via a macrospin model, we numerically demonstrate that these features have important consequences in terms of magnetization switching.

  17. Plasma etching to enhance the surface insulating stability of alumina for fusion applications

    Directory of Open Access Journals (Sweden)

    M. Malo

    2016-12-01

    Full Text Available A significant increase in the surface electrical conductivity of alumina, considered one of the most promising insulating materials for numerous applications in fusion devices, has been observed during ion bombardment in vacuum due to oxygen loss by preferential sputtering. Although this is expected to cause serious limitations to insulating components functionality, recent studies showed it is possible to restore the damaged lattice by oxygen reincorporation during thermal treatments in air. These studies also revealed a correlation between conductivity and ion beam induced luminescence, which is being used to monitor surface electrical conductivity degradation and help qualify the post irradiation recovery. Work now carried out for Wesgo alumina considers oxygen implantation and plasma etching as additional methods to improve recovered layer depth and quality. Both conductivity and luminescence results indicate the potential use of plasma etching not only for damage recovery, but also as a pre-treatment to enhance material stability during irradiation.

  18. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio; Colizzi, G.; Filippetti, A.; Fiorentini, Vincenzo; Schwingenschlö gl, Udo

    2013-01-01

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  19. Surface antiferromagnetism and incipient metal-insulator transition in strained manganite films

    KAUST Repository

    Cossu, Fabrizio

    2013-06-21

    Using first-principles calculations, we show that the (001) surface of the ferromagnet La0.7Sr0.3MnO3 under an epitaxial compressive strain favors antiferromagnetic (AF) order in the surface layers, coexisting with ferromagnetic (FM) bulk order. Surface antiferromagnetism is accompanied by a very marked surface-related spectral pseudogap, signaling an incomplete metal-insulator transition at the surface. The different relaxation and rumpling of the MnO2 and LaO surface planes in the two competing magnetic phases cause distinct work-function changes, which are of potential diagnostic use. The AF phase is recognized as an extreme surface-assisted case of the combination of in-plane AF super-exchange and vertical FM double-exchange couplings that rules magnetism in manganites under in-plane compression.

  20. Tuning the metal-insulator transition in manganite films through surface exchange coupling with magnetic nanodots.

    Science.gov (United States)

    Ward, T Z; Gai, Z; Xu, X Y; Guo, H W; Yin, L F; Shen, J

    2011-04-15

    In strongly correlated electronic systems, the global transport behavior depends sensitively on spin ordering. We show that spin ordering in manganites can be controlled by depositing isolated ferromagnetic nanodots at the surface. The exchange field at the interface is tunable with nanodot density and makes it possible to overcome dimensionality and strain effects in frustrated systems to greatly increasing the metal-insulator transition and magnetoresistance. These findings indicate that electronic phase separation can be controlled by the presence of magnetic nanodots.

  1. A simple approach to measure the surface resistivity of insulating materials

    DEFF Research Database (Denmark)

    Yang, Zhenyu; Wang, Qian

    2011-01-01

    A simple approach for measuring high surface resistivity of insulating materials using standard laboratory equipments is proposed. The developed system consists of a DC power transformer, a concentric ring probe assembly and a digital multi-meter. The DC power transformer can provide either 500V ...... for different materials, source voltages, and serially connected resistors. The testing results showed that the developed system and methods can provide a reasonably accurate measurement of surface resistivity of insulating materials in a robust and economic manner.......A simple approach for measuring high surface resistivity of insulating materials using standard laboratory equipments is proposed. The developed system consists of a DC power transformer, a concentric ring probe assembly and a digital multi-meter. The DC power transformer can provide either 500V...... or 250V DC signal. The probe assembly is constructed according to Danish Standard (DS/EN 1149-1:2006). The multi-meter (Agilent 3440 1A 6½) is used to measure the micro voltage over a known resistor which is serially connected with electrodes in the probe assembly. In order to obtain reliable...

  2. Thermoelectric Transport by Surface States in Bi2Se3-Based Topological Insulator Thin Films

    International Nuclear Information System (INIS)

    Li Long-Long; Xu Wen

    2015-01-01

    We develop a tractable theoretical model to investigate the thermoelectric (TE) transport properties of surface states in topological insulator thin films (TITFs) of Bi 2 Se 3 at room temperature. The hybridization between top and bottom surface states in the TITF plays a significant role. With the increasing hybridization-induced surface gap, the electrical conductivity and electron thermal conductivity decrease while the Seebeck coefficient increases. This is due to the metal-semiconductor transition induced by the surface-state hybridization. Based on these TE transport coefficients, the TE figure-of-merit ZT is evaluated. It is shown that ZT can be greatly improved by the surface-state hybridization. Our theoretical results are pertinent to the exploration of the TE transport properties of surface states in TITFs and to the potential application of Bi 2 Se 3 -based TITFs as high-performance TE materials and devices. (paper)

  3. Surface Thermal Insulation and Pipe Cooling of Spillways during Concrete Construction Period

    Directory of Open Access Journals (Sweden)

    Wang Zhenhong

    2014-01-01

    Full Text Available Given that spillways adopt a hydraulic thin concrete plate structure, this structure is difficult to protect from cracks. The mechanism of the cracks in spillways shows that temperature stress is the major reason for cracks. Therefore, an effective way of preventing cracks is a timely and reasonable temperature-control program. Studies show that one effective prevention method is surface thermal insulation combined with internal pipe cooling. The major factors influencing temperature control effects are the time of performing thermal insulation and the ways of internal pipe cooling. To solve this problem, a spillway is taken as an example and a three-dimensional finite element program and pipe cooling calculation method are adopted to conduct simulation calculation and analysis on the temperature fields and stress fields of concretes subject to different temperature-control programs. The temperature-control effects are then compared. Optimization results show that timely and reasonable surface thermal insulation and water-flowing mode can ensure good temperature-control and anticrack effects. The method has reference value for similar projects.

  4. Study of surface and bulk instabilities in MHD duct flow with imitation of insulator coating imperfections

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zengyu [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China)]. E-mail: xuzy@swip.ac.cn; Pan Chuanjie [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China); Wei Wenhao [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China); Kang Weishan [Southwestern Institute of Physics, P.O. Box 432, Chengdu, Sichuan 610041 (China)

    2006-02-15

    MHD phenomena in a duct flow were studied experimentally by using copper electrodes inserted into the wall of a perfectly insulated duct. The electrodes were connected using a copper wire to imitate different insulator coating imperfection conditions. The experimental results show instabilities of electric potential at the wall (surface instabilities) as well as instabilities in the pressure and velocity (bulk instabilities). The instabilities are strongly dependent on the scale of the copper wire. Three different cases were studied (at the same flow regimes, but with different electrode connections), where the potential at the duct wall is smaller, equal to or higher than the product of duct diameter 2a and transverse magnetic field B and average velocity V . MHD pressure drop {delta}P also exhibits significant changes.

  5. Leakage current characterization for estimating the conditions of non-ceramic insulators' surfaces

    Energy Technology Data Exchange (ETDEWEB)

    El-Hag, Ayman H. [Electrical Engineering Department, American University of Sharjah, Sharjah (United Arab Emirate)

    2007-03-15

    In this work both detection of the beginning of dry-band arcing and correlating the average value of leakage current (LC) with non-ceramic insulator surface damage have been investigated. Silicone rubber insulators were tested in salt-fog under different voltage and conductivity levels. The autocorrelation function (ACF) was calculated for both the fundamental and third harmonic components of LC during the early aging period (EAP). It has been observed that distinct differences exist in the behavior of both the fundamental and that of the third harmonic components of the LC during EAP. Although the fundamental component of the LC begins to grow immediately after starting the test, the third harmonic requires a much longer period of time to begin. Dry-band arcing is highly correlated with distortion in the LC and hence to its third harmonic component. But it has been observed that the level of the fundamental component of LC at which the third harmonic component started to increase is different from one case to another. As such, it is more appropriate to use the ACF of the third harmonic component of LC as an indication of dry-band arcing rather than a simple threshold value. Moreover, the average value of LC during late aging period (LAP) was correlated with the damage of non-ceramic insulators. It has been found that the average level of both the fundamental and third harmonic component of LC is well correlated with the different degrees of damage of non-ceramic insulators' surface. (author)

  6. Magnetic correlations in a classic Mott system

    International Nuclear Information System (INIS)

    Bao, W.; Broholm, C.; Aeppli, G.; Carter, S.A.; Dai, D.; Frost, C.D.

    1997-07-01

    The metal-insulator transition in V 2 O 3 causes a fundamental change in its magnetism. While the antiferromagnetic insulator (AFI) is a Heisenberg localized spin system, the antiferromagnetism in the strongly correlated metal is determined by a Fermi surface instability. Paramagnetic fluctuations in the metal and insulator represent similar spatial spin correlations, but are unrelated to the long range order in the AFI. The phase transition to the AFI induces an abrupt switching of magnetic correlations to a different magnetic wave vector. The AFI transition, therefore, is not a conventional spin order-disorder transition. Instead it is accounted for by an ordering in the occupation of the two degenerate d-orbitals at the Fermi level

  7. Electric controlling of surface metal-insulator transition in the doped BaTiO3 film

    Directory of Open Access Journals (Sweden)

    Wei Xun

    2017-07-01

    Full Text Available Based on first-principles calculations, the BaTiO3(BTO film with local La-doping is studied. For a selected concentration and position of doping, the surface metal-insulator transition occurs under the applied electric field, and the domain appears near the surface for both bipolar states. Furthermore, for the insulated surface state, i.e., the downward polarization state in the doped film, the gradient bandgap structure is achieved, which favors the absorption of solar energy. Our investigation can provide an alternative avenue in modification of surface property and surface screening effect in polar materials.

  8. 2D layered insulator hexagonal boron nitride enabled surface passivation in dye sensitized solar cells.

    Science.gov (United States)

    Shanmugam, Mariyappan; Jacobs-Gedrim, Robin; Durcan, Chris; Yu, Bin

    2013-11-21

    A two-dimensional layered insulator, hexagonal boron nitride (h-BN), is demonstrated as a new class of surface passivation materials in dye-sensitized solar cells (DSSCs) to reduce interfacial carrier recombination. We observe ~57% enhancement in the photo-conversion efficiency of the DSSC utilizing h-BN coated semiconductor TiO2 as compared with the device without surface passivation. The h-BN coated TiO2 is characterized by Raman spectroscopy to confirm the presence of highly crystalline, mixed monolayer/few-layer h-BN nanoflakes on the surface of TiO2. The passivation helps to minimize electron-hole recombination at the TiO2/dye/electrolyte interfaces. The DSSC with h-BN passivation exhibits significantly lower dark saturation current in the low forward bias region and higher saturation in the high forward bias region, respectively, suggesting that the interface quality is largely improved without impeding carrier transport at the material interface. The experimental results reveal that the emerging 2D layered insulator could be used for effective surface passivation in solar cell applications attributed to desirable material features such as high crystallinity and self-terminated/dangling-bond-free atomic planes as compared with high-k thin-film dielectrics.

  9. Duo gating on a 3D topological insulator - independent tuning of both topological surface states

    Science.gov (United States)

    Li, Chuan; de Ronde, Bob; Snelder, Marieke; Stehno, Martin; Huang, Yingkai; Golden, Mark; Brinkman, Alexander; ICE Team; IOP Collaboration

    ABSTRACT: Topological insulators are associated with a trove of exciting physics, such as the ability to host robust anyons, Majorana Bound States, which can be used for quantum computation. For future Majorana devices it is desirable to have the Fermi energy tuned as close as possible to the Dirac point of the topological surface state. Based on previous work on gating BSTS, we report the experimental progress towards gate-tuning of the top and bottom topological surface states of BiSbTeSe2 crystal flakes. When the Fermi level is moved across the Dirac point conduction is shown to change from electron dominated transport to hole dominated transport independently for either surface. In the high magnetic field, one can tune the system precisely between the different landau levels of both surfaces, thus a full gating map of the possible landau levels combination is established. In addition, we provide a simple capacitance model to explain the general hysteresis behaviors in topological insulator systems.

  10. Surface potential measurement of negative-ion-implanted insulators by analysing secondary electron energy distribution

    International Nuclear Information System (INIS)

    Toyota, Yoshitaka; Tsuji, Hiroshi; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki.

    1994-01-01

    The negative ion implantation method we have proposed is a noble technique which can reduce surface charging of isolated electrodes by a large margin. In this paper, the way to specify the surface potential of negative-ion-implanted insulators by the secondary electron energy analysis is described. The secondary electron energy distribution is obtained by a retarding field type energy analyzer. The result shows that the surface potential of fused quartz by negative-ion implantation (C - with the energy of 10 keV to 40 keV) is negatively charged by only several volts. This surface potential is extremely low compared with that by positive-ion implantation. Therefore, the negative-ion implantation is a very effective method for charge-up free implantation without charge compensation. (author)

  11. Controlling electron transfer processes on insulating surfaces with the non-contact atomic force microscope.

    Science.gov (United States)

    Trevethan, Thomas; Shluger, Alexander

    2009-07-01

    We present the results of theoretical modelling that predicts how a process of transfer of single electrons between two defects on an insulating surface can be induced using a scanning force microscope tip. A model but realistic system is employed which consists of a neutral oxygen vacancy and a noble metal (Pt or Pd) adatom on the MgO(001) surface. We show that the ionization potential of the vacancy and the electron affinity of the metal adatom can be significantly modified by the electric field produced by an ionic tip apex at close approach to the surface. The relative energies of the two states are also a function of the separation of the two defects. Therefore the transfer of an electron from the vacancy to the metal adatom can be induced either by the field effect of the tip or by manipulating the position of the metal adatom on the surface.

  12. Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3

    Science.gov (United States)

    Fuhrer, Michael

    2013-03-01

    The three dimensional strong topological insulator (STI) is a new phase of electronic matter which is distinct from ordinary insulators in that it supports on its surface a conducting two-dimensional surface state whose existence is guaranteed by topology. I will discuss experiments on the STI material Bi2Se3, which has a bulk bandgap of 300 meV, much greater than room temperature, and a single topological surface state with a massless Dirac dispersion. Field effect transistors consisting of thin (3-20 nm) Bi2Se3 are fabricated from mechanically exfoliated from single crystals, and electrochemical and/or chemical gating methods are used to move the Fermi energy into the bulk bandgap, revealing the ambipolar gapless nature of transport in the Bi2Se3 surface states. The minimum conductivity of the topological surface state is understood within the self-consistent theory of Dirac electrons in the presence of charged impurities. The intrinsic finite-temperature resistivity of the topological surface state due to electron-acoustic phonon scattering is measured to be ~60 times larger than that of graphene largely due to the smaller Fermi and sound velocities in Bi2Se3, which will have implications for topological electronic devices operating at room temperature. As samples are made thinner, coherent coupling of the top and bottom topological surfaces is observed through the magnitude of the weak anti-localization correction to the conductivity, and, in the thinnest Bi2Se3 samples (~ 3 nm), in thermally-activated conductivity reflecting the opening of a bandgap.

  13. Surface modification by metal ion implantation forming metallic nanoparticles in an insulating matrix

    International Nuclear Information System (INIS)

    Salvadori, M.C.; Teixeira, F.S.; Sgubin, L.G.; Cattani, M.; Brown, I.G.

    2014-01-01

    Highlights: • Metal nanoparticles can be produced through metallic ion implantation in insulating substrate, where the implanted metal self-assembles into nanoparticles. • The nanoparticles nucleate near the maximum of the implantation depth profile, that can be estimated by computer simulation using the TRIDYN. • Nanocomposites, obtained by this way, can be produced in different insulator materials. More specifically we have studied Au/PMMA (polymethylmethacrylate), Pt/PMMA, Ti/alumina and Au/alumina systems. • The nanocomposites were characterized by measuring the resistivity of the composite layer as function of the dose implanted, reaching the percolation threshold. • Excellent agreement was found between the experimental results and the predictions of the theory. - Abstract: There is special interest in the incorporation of metallic nanoparticles in a surrounding dielectric matrix for obtaining composites with desirable characteristics such as for surface plasmon resonance, which can be used in photonics and sensing, and controlled surface electrical conductivity. We have investigated nanocomposites produced by metal ion implantation into insulating substrates, where the implanted metal self-assembles into nanoparticles. The nanoparticles nucleate near the maximum of the implantation depth profile (projected range), which can be estimated by computer simulation using the TRIDYN code. TRIDYN is a Monte Carlo simulation program based on the TRIM (Transport and Range of Ions in Matter) code that takes into account compositional changes in the substrate due to two factors: previously implanted dopant atoms, and sputtering of the substrate surface. Our study show that the nanoparticles form a bidimentional array buried a few nanometers below the substrate surface. We have studied Au/PMMA (polymethylmethacrylate), Pt/PMMA, Ti/alumina and Au/alumina systems. Transmission electron microscopy of the implanted samples show that metallic nanoparticles form in

  14. Transport of Dirac fermions on the surface of strong topological insulator and graphene

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Arijit

    2012-06-14

    In this dissertation I study electronic transport through Dirac Fermions on the surface of strong topological insulator and graphene. I start by reviewing the physics of topological insulator and graphene and the low energy effective theory for the electronic states of the surface of a 3D strong topological insulator and graphene. Using this theory the electronic structure of the surface states of strong topological insulators of geometries with large surface to bulk ratio like nanowire and thin film are obtained. Then the energy spectrum and the spin-parity structure of the eigenstates for a finite size topological insulator quantum dot of the shape of a nanotube are considered. Numerical calculations show that even at the lowest energy scales, the ''spin-surface locking'' is broken, that is, the spin direction in a topologically protected surface mode is not locked to the surface. The calculations also show the existence of ''zero-momentum'' modes, and sub-gap states localized near the ''caps'' of the dot. Both the energy spectrum and the spin texture of the eigenstates are basically reproduced from an analytical surface Dirac fermion description. The results are compared to microscopic calculations using a tight-binding model for a strong topological insulator in a finite-length nanowire geometry, which shows qualitative similarity. Then, a theoretical study of electron-phonon scattering effects in thin films made of a strong topological insulator is presented. Phonons are modeled by isotropic elastic continuum theory with stress-free boundary conditions, and the interaction with the helical surface Dirac fermions is mediated by the deformation potential. The temperature-dependent electrical resistivity ρ(T) and the quasi-particle decay rate Γ(T) observable in photo-emission are computed numerically. The low and high-temperature power laws for both quantities are obtained analytically. Detailed

  15. Interplay between surface and bulk states in the Topological Kondo Insulator SmB6

    Science.gov (United States)

    Biswas, Sangram; Hatnean, Monica Ciomaga; Balakrishnan, Geetha; Bid, Aveek

    Kondo insulator SmB6 is predicted to have topologically protected conducting surface states(TSS). We have studied electrical transport through surface states(SS) at ultra-low temperatures in single crystals of SmB6 using local-nonlocal transport scheme and found a large nonlocal signal at temperatures lower than bulk Kondo gap scale. Using resistance fluctuation spectroscopy, we probed the local and nonlocal transport channels and showed that at low temperatures, transport in this system takes place only through SS. The measured noise in this temperature range arises due to Universal Conductance Fluctuations whose statistics was found to be consistent with theoretical predictions for that of 2D systems in the Symplectic symmetry class. We studied the temperature dependence of noise and found that, unlike the topological insulators of the dichalcogenide family, the noise in surface and bulk conduction channels in SmB6 are uncorrelated - at sufficiently low temperatures, the bulk has no discernible contribution to electrical transport in SmB6 making it an ideal platform for probing the physics of TSS. Nanomission, Department of Science & Technology (DST) and Indian Institute of Scienc and EPSRC, UK, Grant EP/L014963/1.

  16. Charge-spin Transport in Surface-disordered Three-dimensional Topological Insulators

    Science.gov (United States)

    Peng, Xingyue

    As one of the most promising candidates for the building block of the novel spintronic circuit, the topological insulator (TI) has attracted world-wide interest of study. Robust topological order protected by time-reversal symmetry (TRS) makes charge transport and spin generation in TIs significantly different from traditional three-dimensional (3D) or two-dimensional (2D) electronic systems. However, to date, charge transport and spin generation in 3D TIs are still primarily modeled as single-surface phenomena, happening independently on top and bottom surfaces. In this dissertation, I will demonstrate via both experimental findings and theoretical modeling that this "single surface'' theory neither correctly describes a realistic 3D TI-based device nor reveals the amazingly distinct physical picture of spin transport dynamics in 3D TIs. Instead, I present a new viewpoint of the spin transport dynamics where the role of the insulating yet topologically non-trivial bulk of a 3D TI becomes explicit. Within this new theory, many mysterious transport and magneto-transport anomalies can be naturally explained. The 3D TI system turns out to be more similar to its low dimensional sibling--2D TI rather than some other systems sharing the Dirac dispersion, such as graphene. This work not only provides valuable fundamental physical insights on charge-spin transport in 3D TIs, but also offers important guidance to the design of 3D TI-based spintronic devices.

  17. Terahertz emission from semi-insulating GaAs with octadecanthiol-passivated surface

    International Nuclear Information System (INIS)

    Wu, Xiaojun; Xu, Xinlong; Lu, Xinchao; Wang, Li

    2013-01-01

    Terahertz (THz) emission from octadecanthiol (ODT) passivated (1 0 0) surface of the semi-insulating GaAs was measured, and compared with those from the native oxidized and the fresh surfaces. It was shown that the self-assembled ODT monolayer can stabilize the GaAs (1 0 0) surface, and maintain a THz surface emission 1.4 times as efficient as the native oxidized surface under equal conditions. Surface passivation can reduce the built-in electric field in the depletion region of the GaAs (1 0 0), resulting in the suppression of the THz radiation to a different extent. Oxidation of GaAs surface reduces the THz amplitude mainly in the low-frequency region. These results indicate that GaAs can be made a more effective THz source by choosing molecular passivation technique. Conversely, the THz emission features such as polarity, amplitude, and phase from molecule-passivated surfaces may be used to characterize the attached molecules.

  18. Parity violation and superconductivity in doped Mott insulators

    International Nuclear Information System (INIS)

    Khveshchenko, D.Y.; Kogan, Y.I.

    1990-01-01

    The authors study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved the authors give the arguments supporting the existence of these states at a filling number different from one-half. The authors derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. This paper establishes the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation

  19. Parity violation and superconductivity in doped Mott insulators

    International Nuclear Information System (INIS)

    Khveshchenko, D.V.; Kogan, Ya.I.

    1989-12-01

    We study parity violating states of strongly correlated two-dimensional electronic systems. On the basis of mean field theory for the SU(2N)-symmetric generalization of the system involved we give the arguments supporting the existence of these states at a filling number different from one-half. We derive an effective Lagrangian describing the long wavelength dynamics of magnetic excitations and their interaction with charged spinless holes. We establish that the ground state of a doped system is superconducting and discuss the phenomenological manifestations of the parity violation. (author). 48 refs, 3 figs

  20. Excitons in insulators

    International Nuclear Information System (INIS)

    Grasser, R.; Scharmann, A.

    1983-01-01

    This chapter investigates absorption, reflectivity, and intrinsic luminescence spectra of free and/or self-trapped (localized) excitons in alkali halides and rare gas solids. Introduces the concepts underlying the Wannier-Mott and Frenkel exciton models, two extreme pictures of an exciton in crystalline materials. Discusses the theoretical and experimental background; excitons in alkali halides; and excitons in rare gas solids. Shows that the intrinsic optical behavior of wide gap insulators in the range of the fundamental absorption edge is controlled by modified Wannier-Mott excitons. Finds that while that alkali halides only show free and relaxed molecular-like exciton emission, in rare gas crystals luminescence due to free, single and double centered localized excitons is observed. Indicates that the simultaneous existence of free and self-trapped excitons in these solid requires an energy barrier for self-trapping

  1. Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

    International Nuclear Information System (INIS)

    Wang Haiyan; Chen Xiongwen; Zhou Xiaoying; Zhang Lebo; Zhou Guanghui

    2012-01-01

    We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.

  2. Filling-driven Mott transition in SU(N ) Hubbard models

    Science.gov (United States)

    Lee, Seung-Sup B.; von Delft, Jan; Weichselbaum, Andreas

    2018-04-01

    We study the filling-driven Mott transition involving the metallic and paramagnetic insulating phases in SU (N ) Fermi-Hubbard models, using the dynamical mean-field theory and the numerical renormalization group as its impurity solver. The compressibility shows a striking temperature dependence: near the critical end-point temperature, it is strongly enhanced in the metallic phase close to the insulating phase. We demonstrate that this compressibility enhancement is associated with the thermal suppression of the quasiparticle peak in the local spectral functions. We also explain that the asymmetric shape of the quasiparticle peak originates from the asymmetry in the dynamics of the generalized doublons and holons.

  3. Ferromagnetic barrier-induced negative differential conductance on the surface of a topological insulator

    International Nuclear Information System (INIS)

    An Xing-Tao

    2014-01-01

    The effect of the negative differential conductance of a ferromagnetic barrier on the surface of a topological insulator is theoretically investigated. Due to the changes of the shape and position of the Fermi surfaces in the ferromagnetic barrier, the transport processes can be divided into three kinds: the total, partial, and blockade transmission mechanisms. The bias voltage can give rise to the transition of the transport processes from partial to blockade transmission mechanisms, which results in a considerable effect of negative differential conductance. With appropriate structural parameters, the current-voltage characteristics show that the minimum value of the current can reach to zero in a wide range of the bias voltage, and then a large peak-to-valley current ratio can be obtained. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Spatial potential ripples of azimuthal surface modes in topological insulator Bi2Te3 nanowires.

    Science.gov (United States)

    Muñoz Rojo, Miguel; Zhang, Yingjie; Manzano, Cristina V; Alvaro, Raquel; Gooth, Johannes; Salmeron, Miquel; Martin-Gonzalez, Marisol

    2016-01-11

    Topological insulators (TI) nanowires (NW) are an emerging class of structures, promising both novel quantum effects and potential applications in low-power electronics, thermoelectrics and spintronics. However, investigating the electronic states of TI NWs is complicated, due to their small lateral size, especially at room temperature. Here, we perform scanning probe based nanoscale imaging to resolve the local surface potential landscapes of Bi2Te3 nanowires (NWs) at 300 K. We found equipotential rings around the NWs perimeter that we attribute to azimuthal 1D modes. Along the NW axis, these modes are altered, forming potential ripples in the local density of states, due to intrinsic disturbances. Potential mapping of electrically biased NWs enabled us to accurately determine their conductivity which was found to increase with the decrease of NW diameter, consistent with surface dominated transport. Our results demonstrate that TI NWs can pave the way to both exotic quantum states and novel electronic devices.

  5. A time-reversal invariant topological phase at the surface of a 3D topological insulator

    International Nuclear Information System (INIS)

    Bonderson, Parsa; Nayak, Chetan; Qi, Xiao-Liang

    2013-01-01

    A 3D fermionic topological insulator has a gapless Dirac surface state protected by time-reversal symmetry and charge conservation symmetry. The surface state can be gapped by introducing ferromagnetism to break time-reversal symmetry, introducing superconductivity to break charge conservation, or entering a topological phase. In this paper, we construct a minimal gapped topological phase that preserves both time-reversal and charge conservation symmetries and supports Ising-type non-Abelian anyons. This phase can be understood heuristically as emerging from a surface s-wave superconducting state via the condensation of eight-vortex composites. The topological phase inherits vortices supporting Majorana zero modes from the surface superconducting state. However, since it is time-reversal invariant, the surface topological phase is a distinct phase from the Ising topological phase, which can be viewed as a quantum-disordered spin-polarized p x + ip y superconductor. We discuss the anyon model of this topological phase and the manner in which time-reversal symmetry is realized in it. We also study the interfaces between the topological state and other surface gapped phases. (paper)

  6. Spatial distribution of spin polarization in a channel on the surface of a topological insulator

    International Nuclear Information System (INIS)

    Zhou Xiaoying; Shao Huaihua; Liu Yiman; Tang Dongsheng; Zhou Guanghui

    2012-01-01

    We study the spatial distribution of electron spin polarization for a gate-controlled T-shaped channel on the surface of a three-dimensional topological insulator (3D TI). We demonstrate that an energy gap depending on channel geometry parameters is definitely opened due to the spatial confinement. Spin surface locking in momentum space for a uniform wide channel with Hamiltonian linearity in the wavevector is still kept, but it is broken with Hamiltonian nonlinearity in the wavevector, like that for two-dimensional surface states widely studied in the literature. However, the spin surface locking for a T-shaped channel is broken even with Hamiltonian linearity in the wavevector. Interestingly, the magnitude and direction of the in-plane spin polarization are spatially dependent in all regions due to the breaking of translational symmetry of the T-shaped channel system. These interesting findings for an electrically controlled nanostructure based on the 3D TI surface may be testable with the present experimental technique, and may provide further understanding the nature of 3D TI surface states. (paper)

  7. Geometric effects on surface states in topological insulator Bi2Te3 nanowire

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillman; Povolotskyi, Michael; Klimeck, Gerhard

    2012-02-01

    Bismuth Telluride (BT) is a 3D topological insulator (TI) with surface states that have energy dispersion linear in momentum and forms a Dirac cone at low energy. In this work we investigate the surface properties of a BT nanowire and demonstrate the existence of TI states. We also show how such states vanish under certain geometric conditions. An atomistic model (sp3d5s* TB) is used to compute the energy dispersion in a BT nanowire. Penetration depth of the surface states is estimated by ratio of Fermi velocity and band-gap. BT possesses a tiny band-gap, which creates small localization of surface states and greater penetration in to the bulk. To offset this large spatial penetration, which is undesirable to avoid a direct coupling between surfaces, we expect that bigger cross-sections of BT nanowires would be needed to obtain stable TI states. Our numerical work validates this prediction. Furthermore, geometry of the nanowire is shown to influence the TI states. Using a combined analytical and numerical approach our results reveal that surface roughness impact electronic structure leading to Rashba type splits along z-direction. Cylindrical and square cross-sections are given as illustrative examples.

  8. Ultrafast surface carrier dynamics in the topological insulator Bi₂Te₃.

    Science.gov (United States)

    Hajlaoui, M; Papalazarou, E; Mauchain, J; Lantz, G; Moisan, N; Boschetto, D; Jiang, Z; Miotkowski, I; Chen, Y P; Taleb-Ibrahimi, A; Perfetti, L; Marsi, M

    2012-07-11

    We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi(2)Te(3) following a femtosecond laser excitation. Using time and angle-resolved photoelectron spectroscopy, we provide a direct real-time visualization of the transient carrier population of both the surface states and the bulk conduction band. We find that the thermalization of the surface states is initially determined by interband scattering from the bulk conduction band, lasting for about 0.5 ps; subsequently, few picoseconds are necessary for the Dirac cone nonequilibrium electrons to recover a Fermi-Dirac distribution, while their relaxation extends over more than 10 ps. The surface sensitivity of our measurements makes it possible to estimate the range of the bulk-surface interband scattering channel, indicating that the process is effective over a distance of 5 nm or less. This establishes a correlation between the nanoscale thickness of the bulk charge reservoir and the evolution of the ultrafast carrier dynamics in the surface Dirac cone.

  9. The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, W. [Politechnika Krakowska, Cracow (Poland)

    1995-12-31

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

  10. The Mott localization and magnetic properties in condensed fermions systems; Lokalizacja Motta i wlasnosci magnetyczne skondensowanych ukladow fermionowych

    Energy Technology Data Exchange (ETDEWEB)

    Wojcik, W [Politechnika Krakowska, Cracow (Poland)

    1996-12-31

    In the present thesis the Mott localization and magnetic properties in condensed fermions system are considered. The Hubbard model has been used to strongly correlated electron systems and the Skyrme potential to a dense neutron matter with small concentration of protons. A variational approach to the metal-insulator transition is proposed which combines the Mott and Gutzwiller-Brinkman-Rice aspects of the localization. Magnetic properties of strongly correlated electrons are analyzed within the modified spin-rotation-invariant approach in the slow-boson representation. The theoretical prediction for considered systems are presented. 112 refs, 39 figs.

  11. Electrical and proximity-magnetic effects induced quantum Goos–Hänchen shift on the surface of topological insulator

    Energy Technology Data Exchange (ETDEWEB)

    Kuai, Jian [School of Physics and Electronics, Yancheng Teachers College, Yancheng, 224002 Jiangsu (China); Da, H.X., E-mail: haixia8779@163.com [Electrical and Computer Engineering Department, National University of Singapore, 4 Engineering Drive 3, 117576 (Singapore)

    2014-03-15

    We use scattering matrix method to theoretically demonstrate that the quantum Goos–Hänchen shift of the surface on three-dimensional topological insulator coated by ferromagnetic strips is sensitive to the magnitude of ferromagnetic magnetization. The dependence of quantum Goos–Hänchen shift on magnetization and gate bias is investigated by performing station phase approach. It is found that quantum Goos–Hänchen shift is positive and large under the magnetic barrier but may be positive as well as negative values under the gate bias. Furthermore, the position of quantum Goos–Hänchen peak can also be modulated by the combination of gate bias and proximity magnetic effects. Our results indicate that topological insulators are another candidates to support quantum Goos–Hänchen shift. - Highlights: • Quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators is first investigated. • The magnetization affects quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators. • Quantum Goos–Hänchen shift of the surface on three-dimensional topological insulators can be manipulated by the gate voltages.

  12. The Dynamics of the Electric Field Distribution in the Surface of Insulating Film Irradiated by Air Ions

    Directory of Open Access Journals (Sweden)

    Julionas KALADE

    2016-05-01

    Full Text Available When deposited on a surface, electric charge usually accumulates near the tips of surface irregularities, from where it can be transferred to nearby objects due to ionization of ambient air. The amount of transferred charge, the rate of charge transfer, the size of the charged spot (e.g., on the surface of an insulator and its tendency to spread will depend on properties of air during electric discharge, on the magnitude of charge accumulated at the tip of an object, on possibilities for replenishing that charge, on the time spent for charge transfer from the tip onto the insulating layer, on properties of the insulating layer, etc. Those properties are discussed in this work by comparing the results of measurements and theoretical analysis.

  13. Electron-optical systems for Mott polarimeters

    International Nuclear Information System (INIS)

    Fishkova, T.Ya.; Mamaev, Yu.A.; Ovsyannikova, I.P.; Petrov, V.N.; Shpak, E.V.

    1994-01-01

    Electron-optical systems, forming polarized electron beams from solid and gaseous sources at a Mott detector with operating potentials of 20 and 50 kV, have been theoretically investigated. The integral EOS creates a beam <2.6 nm in diameter at the target of the Mott detector for secondary electrons with energies of 1-20 eV and exit angles of 0 -60 . The differential EOS provides an energy resolution of 2-6% within the range of 3-2000 eV, the illumination being 5-13% for a 4π angle; at the target of the Mott detector it creates a beam of 1-6 mm in diameter. Both systems have been constructed at the laboratory of Spin-polarized Electron Spectroscopy (Department of Experimental Physics) at St. Petersburg State Technical University. ((orig.))

  14. Protective capping of topological surface states of intrinsically insulating Bi2Te3

    Directory of Open Access Journals (Sweden)

    Katharina Hoefer

    2015-09-01

    Full Text Available We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating Bi2Te3. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the Bi2Te3 thin film. From in-situ four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean Bi2Te3 surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable ex-situ experiments on the properties of Bi2Te3 surface states with nontrivial topology.

  15. Optically tunable spin transport on the surface of a topological insulator

    International Nuclear Information System (INIS)

    Yudin, D; Shelykh, I A; Kibis, O V

    2016-01-01

    The emerging field of spinoptronics has a potential to supersede the functionality of modern electronics, while a proper description of strong light–matter coupling pose the most intriguing questions from both fundamental scientific and technological perspectives. In this paper we address a highly relevant issue for such a development. We theoretically explore spin dynamics on the surface of a 3D topological insulator (TI) irradiated with an off-resonant high-frequency electromagnetic wave. The strong coupling between electrons and the electromagnetic wave drastically modifies the spin properties of TI. The effects of irradiation are shown to result in anisotropy of electron energy spectrum near the Dirac point and suppression of spin current and are investigated in detail in this work. (paper)

  16. Response Surface Methodology for Design of Porous Hollow Sphere Thermal Insulator

    Science.gov (United States)

    Shohani, Nazanin; Pourmahdian, Saeed; Shirkavand Hadavand, Behzad

    2017-11-01

    In this study, response surface method is used for synthesizing polystyrene (PS) as sacrificial templates and optimizing the particle size. Three factors of initiator, stabilizer concentration and also stirring rate were selected as variable factors. Then, three different concentration of tetraethyl orthosilicate (TEOS) added to reaction media and core-shell structure with PS core and silica shell was developed. Finally, core-shell structure was changed to hollow silica sphere for using as thermal insulator. We observed that increased initiator concentration caused to larger PS particles, increase the stirring rate caused the smaller PS and also with increased the stabilizer concentration obtained that particle size decrease then after 2.5% began to increase. Also the optimum amount of TEOS was found.

  17. A method for the dynamic and thermal stress analysis of space shuttle surface insulation

    Science.gov (United States)

    Ojalvo, I. U.; Levy, A.; Austin, F.

    1975-01-01

    The thermal protection system of the space shuttle consists of thousands of separate insulation tiles bonded to the orbiter's surface through a soft strain-isolation layer. The individual tiles are relatively thick and possess nonuniform properties. Therefore, each is idealized by finite-element assemblages containing up to 2500 degrees of freedom. Since the tiles affixed to a given structural panel will, in general, interact with one another, application of the standard direct-stiffness method would require equation systems involving excessive numbers of unknowns. This paper presents a method which overcomes this problem through an efficient iterative procedure which requires treatment of only a single tile at any given time. Results of associated static, dynamic, and thermal stress analyses and sufficient conditions for convergence of the iterative solution method are given.

  18. External Thermal Insulation Composite Systems: Critical Parameters for Surface Hygrothermal Behaviour

    Directory of Open Access Journals (Sweden)

    Eva Barreira

    2014-01-01

    Full Text Available External Thermal Insulation Composite Systems (ETICS are often used in Europe. Despite its thermal advantages, low cost, and ease of application, this system has serious problems of biological growth causing the cladding defacement. Recent studies pointed that biological growth is due to high values of surface moisture content, which mostly results from the combined effect of exterior surface condensation, wind-driven rain, and drying process. Based on numerical simulation, this paper points the most critical parameters involved in hygrothermal behaviour of ETICS, considering the influence of thermal and hygric properties of the external rendering, the effect of the characteristics of the façade, and the consequences of the exterior and interior climate on exterior surface condensation, wind-driven rain, and drying process. The model used was previously validated by comparison with the results of an “in situ” campaign. The results of the sensitivity analyses show that relative humidity and temperature of the exterior air, atmospheric radiation, and emissivity of the exterior rendering are the parameters that most influence exterior surface condensation. Wind-driven rain depends mostly on horizontal rain, building’s height, wind velocity, and orientation. The drying capacity is influenced by short-wave absorbance, incident solar radiation, and orientation.

  19. Dirac-Screening Stabilized Surface-State Transport in a Topological Insulator

    Directory of Open Access Journals (Sweden)

    Christoph Brüne

    2014-12-01

    Full Text Available We report magnetotransport studies on a gated strained HgTe device. This material is a three-dimensional topological insulator and exclusively shows surface-state transport. Remarkably, the Landau-level dispersion and the accuracy of the Hall quantization remain unchanged over a wide density range (3×10^{11}  cm^{−2}surface-state dominated, where bulk transport would have been expected to coexist already. Moreover, the density dependence of the Dirac-type quantum Hall effect allows us to identify the contributions from the individual surfaces. A k·p model can describe the experiments but only when assuming a steep band bending across the regions where the topological surface states are contained. This steep potential originates from the specific screening properties of Dirac systems and causes the gate voltage to influence the position of the Dirac points rather than that of the Fermi level.

  20. Collective excitations and the nature of Mott transition in undoped gapped graphene

    International Nuclear Information System (INIS)

    Jafari, S A

    2012-01-01

    The particle-hole continuum (PHC) for massive Dirac fermions provides an unprecedented opportunity for the formation of two collective split-off states, one in the singlet and the other in the triplet (spin-1) channel, when the short-range interactions are added to the undoped system. Both states are close in energy and are separated from the continuum of free particle-hole excitations by an energy scale of the order of the gap parameter Δ. They both disperse linearly with two different velocities, reminiscent of spin-charge separation in Luttinger liquids. When the strength of Hubbard interactions is stronger than a critical value, the velocity of singlet excitation, which we interpret as a charge composite boson, becomes zero and renders the system a Mott insulator. Beyond this critical point the low-energy sector is left with a linearly dispersing triplet mode - a characteristic of a Mott insulator. The velocity of the triplet mode at the Mott criticality is twice the velocity of the underlying Dirac fermions. The phase transition line in the space of U and Δ is in qualitative agreement with our previous dynamical mean field theory calculations. (paper)

  1. Electrical resistivity study of insulators

    International Nuclear Information System (INIS)

    Liesegang, J.; Senn, B.C.; Holcombe, S.R.; Pigram, P.J.

    1998-01-01

    Full text: Conventional methods of electrical resistivity measurement of dielectric materials involve the application of electrodes to a sample whereby a potential is applied and a current through the material is measured. Although great care and ingenuity has often been applied to this technique, the recorded values of electrical resistivity (p), especially for insulator materials, show great disparity. In earlier work by the authors, a method for determining surface charge decay [Q(t)], using a coaxial cylindrical capacitor arrangement interfaced to a personal computer, was adapted to allow the relatively straightforward measurement of electrical resistivity in the surface region of charged insulator materials. This method was used to develop an ionic charge transport theory, based on Mott-Gurney diffusion to allow a greater understanding into charge transport behaviour. This theory was extended using numerical analysis to produce a two dimensional (2-D) computational model to allow the direct comparison between experimental and theoretical charge decay data. The work also provided a means for the accurate determination of the diffusion coefficient (D) and the layer of thickness of surface charge (Δz) on the sample. The work outlined here involves an extension of the theoretical approach previously taken, using a computational model based more closely on the 3-D experimental set-up, to reinforce the level of confidence in the results achieved for the simpler 2-D treatment. Initially, a 3-D rectangular box arrangement similar to the experimental set-up was modelled and a theoretical and experimental comparison of voltage decay results made. This model was then transferred into cylindrical coordinates to allow it to be almost identical to the experiment and again a comparison made. In addition, theoretical analysis of the coupled non-linear partial differential equations governing the charge dissipation process has led to a simplification involving directly, the

  2. Mott Transition In Strongly Correlated Materials: Many-Body Methods And Realistic Materials Simulations

    Science.gov (United States)

    Lee, Tsung-Han

    Strongly correlated materials are a class of materials that cannot be properly described by the Density Functional Theory (DFT), which is a single-particle approximation to the original many-body electronic Hamiltonian. These systems contain d or f orbital electrons, i.e., transition metals, actinides, and lanthanides compounds, for which the electron-electron interaction (correlation) effects are too strong to be described by the single-particle approximation of DFT. Therefore, complementary many-body methods have been developed, at the model Hamiltonians level, to describe these strong correlation effects. Dynamical Mean Field Theory (DMFT) and Rotationally Invariant Slave-Boson (RISB) approaches are two successful methods that can capture the correlation effects for a broad interaction strength. However, these many-body methods, as applied to model Hamiltonians, treat the electronic structure of realistic materials in a phenomenological fashion, which only allow to describe their properties qualitatively. Consequently, the combination of DFT and many body methods, e.g., Local Density Approximation augmented by RISB and DMFT (LDA+RISB and LDA+DMFT), have been recently proposed to combine the advantages of both methods into a quantitative tool to analyze strongly correlated systems. In this dissertation, we studied the possible improvements of these approaches, and tested their accuracy on realistic materials. This dissertation is separated into two parts. In the first part, we studied the extension of DMFT and RISB in three directions. First, we extended DMFT framework to investigate the behavior of the domain wall structure in metal-Mott insulator coexistence regime by studying the unstable solution describing the domain wall. We found that this solution, differing qualitatively from both the metallic and the insulating solutions, displays an insulating-like behavior in resistivity while carrying a weak metallic character in its electronic structure. Second, we

  3. Layered insulator hexagonal boron nitride for surface passivation in quantum dot solar cell

    International Nuclear Information System (INIS)

    Shanmugam, Mariyappan; Jain, Nikhil; Jacobs-Gedrim, Robin; Yu, Bin; Xu, Yang

    2013-01-01

    Single crystalline, two dimensional (2D) layered insulator hexagonal boron nitride (h-BN), is demonstrated as an emerging material candidate for surface passivation on mesoporous TiO 2 . Cadmium selenide (CdSe) quantum dot based bulk heterojunction (BHJ) solar cell employed h-BN passivated TiO 2 as an electron acceptor exhibits photoconversion efficiency ∼46% more than BHJ employed unpassivated TiO 2 . Dominant interfacial recombination pathways such as electron capture by TiO 2 surface states and recombination with hole at valence band of CdSe are efficiently controlled by h-BN enabled surface passivation, leading to improved photovoltaic performance. Highly crystalline, confirmed by transmission electron microscopy, dangling bond-free 2D layered h-BN with self-terminated atomic planes, achieved by chemical exfoliation, enables efficient passivation on TiO 2 , allowing electronic transport at TiO 2 /h-BN/CdSe interface with much lower recombination rate compared to an unpassivated TiO 2 /CdSe interface

  4. On the modelling of semi-insulating GaAs including surface tension and bulk stresses

    Energy Technology Data Exchange (ETDEWEB)

    Dreyer, W.; Duderstadt, F.

    2004-07-01

    Necessary heat treatment of single crystal semi-insulating Gallium Arsenide (GaAs), which is deployed in micro- and opto- electronic devices, generate undesirable liquid precipitates in the solid phase. The appearance of precipitates is influenced by surface tension at the liquid/solid interface and deviatoric stresses in the solid. The central quantity for the description of the various aspects of phase transitions is the chemical potential, which can be additively decomposed into a chemical and a mechanical part. In particular the calculation of the mechanical part of the chemical potential is of crucial importance. We determine the chemical potential in the framework of the St. Venant-Kirchhoff law which gives an appropriate stress/strain relation for many solids in the small strain regime. We establish criteria, which allow the correct replacement of the St. Venant-Kirchhoff law by the simpler Hooke law. The main objectives of this study are: (i) We develop a thermo-mechanical model that describes diffusion and interface motion, which both are strongly influenced by surface tension effects and deviatoric stresses. (ii) We give an overview and outlook on problems that can be posed and solved within the framework of the model. (iii) We calculate non-standard phase diagrams, i.e. those that take into account surface tension and non-deviatoric stresses, for GaAs above 786 C, and we compare the results with classical phase diagrams without these phenomena. (orig.)

  5. Quantum magnetotransport for the surface states of three-dimensional topological insulators in the presence of a Zeeman field

    KAUST Repository

    Tahir, Muhammad

    2013-05-01

    We show that the surface states of magnetic topological insulators realize an activated behavior and Shubnikov de Haas oscillations. Applying an external magnetic field perpendicular to the surface of the topological insulator in the presence of Zeeman interaction, we investigate the opening of a gap at the Dirac point, making the surface Dirac fermions massive, and the effects on the transport properties. Analytical expressions are derived for the collisional conductivity for elastic impurity scattering in the first Born approximation. We also calculate the Hall conductivity using the Kubo formalism. Evidence for a transition from gapless to gapped surface states at n = 0 and activated transport is found from the temperature and magnetic-field dependence of the collisional and Hall conductivities. © Copyright EPLA, 2013.

  6. Nematic order on the surface of a three-dimensional topological insulator

    Science.gov (United States)

    Lundgren, Rex; Yerzhakov, Hennadii; Maciejko, Joseph

    2017-12-01

    We study the spontaneous breaking of rotational symmetry in the helical surface state of three-dimensional topological insulators due to strong electron-electron interactions, focusing on time-reversal invariant nematic order. Owing to the strongly spin-orbit coupled nature of the surface state, the nematic order parameter is linear in the electron momentum and necessarily involves the electron spin, in contrast with spin-degenerate nematic Fermi liquids. For a chemical potential at the Dirac point (zero doping), we find a first-order phase transition at zero temperature between isotropic and nematic Dirac semimetals. This extends to a thermal phase transition that changes from first to second order at a finite-temperature tricritical point. At finite doping, we find a transition between isotropic and nematic helical Fermi liquids that is second order even at zero temperature. Focusing on finite doping, we discuss various observable consequences of nematic order, such as anisotropies in transport and the spin susceptibility, the partial breakdown of spin-momentum locking, collective modes and induced spin fluctuations, and non-Fermi-liquid behavior at the quantum critical point and in the nematic phase.

  7. Surface State Dynamics of Topological Insulators Investigated by Femtosecond Time- and Angle-Resolved Photoemission Spectroscopy

    Directory of Open Access Journals (Sweden)

    Hamoon Hedayat

    2018-04-01

    Full Text Available Topological insulators (TI are known for striking quantum phenomena associated with their spin-polarized topological surface state (TSS. The latter in particular forms a Dirac cone that bridges the energy gap between valence and conduction bands, providing a unique opportunity for prospective device applications. In TI of the BixSb2−xTeySe3−y (BSTS family, stoichiometry determines the morphology and position of the Dirac cone with respect to the Fermi level. In order to engineer specific transport properties, a careful tuning of the TSS is highly desired. Therefore, we have systematically explored BSTS samples with different stoichiometries by time- and angle-resolved photoemission spectroscopy (TARPES. This technique provides snapshots of the electronic structure and discloses the carrier dynamics in surface and bulk states, providing crucial information for the design of electro-spin current devices. Our results reveal the central role of doping level on the Dirac cone structure and its femtosecond dynamics. In particular, an extraordinarily long TSS lifetime is observed when the the vertex of the Dirac cone lies at the Fermi level.

  8. Intrinsic conduction through topological surface states of insulating Bi{sub 2}Te{sub 3} epitaxial thin films

    Energy Technology Data Exchange (ETDEWEB)

    Hoefer, Katharina; Becker, Christoph; Rata, Diana; Thalmeier, Peter; Tjeng, Liu Hao [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); Swanson, Jesse [Max Planck Institute for Chemical Physics of Solids, Dresden (Germany); University of British Columbia, Vancouver (Canada)

    2015-07-01

    Topological insulators represent a new state of matter that open up new opportunities to create unique quantum particles. Many exciting experiments have been proposed by theory, yet, the main obstacle for their execution is material quality and cleanliness of the experimental conditions. The presence of tiny amounts of defects in the bulk or contaminants at the surface already mask these phenomena. We present the preparation, structural and spectroscopic characterisation of MBE-grown Bi{sub 2}Te{sub 3} thin films that are insulating in the bulk. Moreover, temperature dependent four-point-probe resistivity measurements of the Dirac states on surfaces that are intrinsically clean were conducted. The total amount of surface charge carries is in the order of 10{sup 12} cm{sup -2} and mobilities up to 4600 cm{sup 2}/Vs are observed. Importantly, these results are achieved by carrying out the preparation and characterisation all in-situ under ultra-high-vacuum conditions.

  9. Optical microcavities based on surface modes in two-dimensional photonic crystals and silicon-on-insulator photonic crystals

    DEFF Research Database (Denmark)

    Xiao, Sanshui; Qiu, M.

    2007-01-01

    Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor is gr...... is gradually enhanced and the resonant frequency converges to that of the corresponding surface mode in the photonic crystals. These structures have potential applications such as sensing.......Surface-mode optical microcavities based on two-dimensional photonic crystals and silicon-on-insulator photonic crystals are studied. We demonstrate that a high-quality-factor microcavity can be easily realized in these structures. With an increasing of the cavity length, the quality factor...

  10. Electronic tunneling through a potential barrier on the surface of a topological insulator

    Science.gov (United States)

    Zhou, Benliang; Zhou, Benhu; Zhou, Guanghui

    2016-12-01

    We investigate the tunneling transport for electrons on the surface of a topological insulator (TI) through an electrostatic potential barrier. By using the Dirac equation with the continuity conditions for all segments of wave functions at the interfaces between regions inside and outside the barrier, we calculate analytically the transmission probability and conductance for the system. It is demonstrated that, the Klein paradox can also been observed in the system same as in graphene system. Interestingly, the conductance reaches the minimum value when the incident electron energy is equal to the barrier strength. Moreover, with increasing barrier width, the conductance turns up some tunneling oscillation peaks, and larger barrier strength can cause lower conductance, shorter period but larger oscillation amplitude. The oscillation amplitude decreases as the barrier width increases, which is similar as that of the system consisting of the compressive uniaxial strain applied on a TI, but somewhat different from that of graphene system where the oscillation amplitude is a constant. The findings here imply that an electrostatic barrier can greatly influence the electron tunneling transport of the system, and may provide a new way to realize directional filtering of electrons.

  11. Study of leakage current behaviour on artificially polluted surface of ceramic insulator

    International Nuclear Information System (INIS)

    Subba Reddy, B.; Nagabhushana, G.R.

    2003-01-01

    This paper presents the results of the study concerning to the leakage current behaviour on artificially polluted ceramic insulator surface. From the present study it was observed that there is a reasonably well-defined inception of current i.e. scintillations at a finite voltage. The corresponding voltages for extinction of the current are in the range of 0.8 kV to 2.1 kV. Obviously, the dry band formed in the immediate vicinity of the pin prevents smooth current flow as the voltage rises from zero. Only when the voltage is adequate it causes a flashover of the dray band and current starts flowing. As is common in similar current extinction phenomena, here also, the extinction voltages are significantly lower than the inception voltages. Further, the voltage-current curves invariably show hysteresis-the leakage currents are lower in the reducing portion of the voltage. This is obviously due to drying of the wet pollutant layer thereby increasing its resistance. It is believed that this is the first time that such a direct quantitative evidence of drying in individual half cycles is experimentally visualized

  12. Electrical Performance of Distribution Insulators with Chlorella vulgaris Growth on its Surface

    Directory of Open Access Journals (Sweden)

    Herbert Enrique Rojas Cubides

    2015-06-01

    Full Text Available This paper presents a study about electrical performance of ceramic and polymeric insulators bio-contaminated with alga Chlorella vulgaris. The performed tests involve ANSI 55-2 and ANSI 52-1 ceramic insulators and ANSI DS-15 polymeric insulators, all of them used in distribution systems of Colombia. Biological contamination of insulators is realized using a controlled environment chamber that adjusts the temperature, humidity and light radiation. The laboratory tests include measurements of flashover voltages and leakage currents and they were performed to determine how insulators are affected by biological contamination. After a series of laboratory tests, it was concluded that the presence of Chlorella vulgaris on the contaminated ceramic insulators reduces the wet flashover voltage up to 12% and increases their leakage currents up to 80%. On the other hand, for polymeric insulators the effect of algae growth on flashover voltages was not to strong, although the leakage currents increase up to 60%.

  13. Superconductivity, Mott-Hubbard states, and molecular orbital order in intercalated fullerides

    CERN Document Server

    Iwasa, Y

    2003-01-01

    This article reviews the current status of chemically doped fullerene superconductors and related compounds, with particular focus on Mott-Hubbard states and the role of molecular orbital degeneracy. Alkaline-earth metal fullerides produce superconductors of several kinds, all of which have states with higher valence than (C sub 6 sub 0) sup 6 sup - , where the second lowest unoccupied molecular orbital (the LUMO + 1 state) is filled. Alkali-metal-doped fullerides, on the other hand, afford superconductors only at the stoichiometry A sub 3 C sub 6 sub 0 (A denotes alkali metal) and in basically fcc structures. The metallicity and superconductivity of A sub 3 C sub 6 sub 0 compounds are destroyed either by reduction of the crystal symmetry or by change in the valence of C sub 6 sub 0. This difference is attributed to the narrower bandwidth in the A sub 3 C sub 6 sub 0 system, causing electronic instability in Jahn-Teller insulators and Mott-Hubbard insulators. The latter metal-insulator transition is driven by...

  14. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  15. Optimization of Process Variables for Insulation Coating of Conductive Particles by Response Surface Methodology

    International Nuclear Information System (INIS)

    Sim, Chol-Ho

    2016-01-01

    The powder core, conventionally fabricated from iron particles coated with insulator, showed large eddy current loss under high frequency, because of small specific resistance. To overcome the eddy current loss, the increase in the specific resistance of powder cores was needed. In this study, copper oxide coating onto electrically conductive iron particles was performed using a planetary ball mill to increase the specific resistance. Coating factors were optimized by the Response surface methodology. The independent variables were the CuO mass fraction, mill revolution number, coating time, ball size, ball mass and sample mass. The response variable was the specific resistance. The optimization of six factors by the fractional factorial design indicated that CuO mass fraction, mill revolution number, and coating time were the key factors. The levels of these three factors were selected by the three-factors full factorial design and steepest ascent method. The steepest ascent method was used to approach the optimum range for maximum specific resistance. The Box-Behnken design was finally used to analyze the response surfaces of the screened factors for further optimization. The results of the Box-Behnken design showed that the CuO mass fraction and mill revolution number were the main factors affecting the efficiency of coating process. As the CuO mass fraction increased, the specific resistance increased. In contrast, the specific resistance increased with decreasing mill revolution number. The process optimization results revealed a high agreement between the experimental and the predicted data (Adj-R2=0.944). The optimized CuO mass fraction, mill revolution number, and coating time were 0.4, 200 rpm, and 15 min, respectively. The measured value of the specific resistance of the coated pellet under the optimized conditions of the maximum specific resistance was 530 kΩ·cm

  16. Optimization of Process Variables for Insulation Coating of Conductive Particles by Response Surface Methodology

    Energy Technology Data Exchange (ETDEWEB)

    Sim, Chol-Ho [Sangji University, Wonju (Korea, Republic of)

    2016-02-15

    The powder core, conventionally fabricated from iron particles coated with insulator, showed large eddy current loss under high frequency, because of small specific resistance. To overcome the eddy current loss, the increase in the specific resistance of powder cores was needed. In this study, copper oxide coating onto electrically conductive iron particles was performed using a planetary ball mill to increase the specific resistance. Coating factors were optimized by the Response surface methodology. The independent variables were the CuO mass fraction, mill revolution number, coating time, ball size, ball mass and sample mass. The response variable was the specific resistance. The optimization of six factors by the fractional factorial design indicated that CuO mass fraction, mill revolution number, and coating time were the key factors. The levels of these three factors were selected by the three-factors full factorial design and steepest ascent method. The steepest ascent method was used to approach the optimum range for maximum specific resistance. The Box-Behnken design was finally used to analyze the response surfaces of the screened factors for further optimization. The results of the Box-Behnken design showed that the CuO mass fraction and mill revolution number were the main factors affecting the efficiency of coating process. As the CuO mass fraction increased, the specific resistance increased. In contrast, the specific resistance increased with decreasing mill revolution number. The process optimization results revealed a high agreement between the experimental and the predicted data (Adj-R2=0.944). The optimized CuO mass fraction, mill revolution number, and coating time were 0.4, 200 rpm, and 15 min, respectively. The measured value of the specific resistance of the coated pellet under the optimized conditions of the maximum specific resistance was 530 kΩ·cm.

  17. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  18. Topological surface states interacting with bulk excitations in the Kondo insulator SmB6 revealed via planar tunneling spectroscopy.

    Science.gov (United States)

    Park, Wan Kyu; Sun, Lunan; Noddings, Alexander; Kim, Dae-Jeong; Fisk, Zachary; Greene, Laura H

    2016-06-14

    Samarium hexaboride (SmB6), a well-known Kondo insulator in which the insulating bulk arises from strong electron correlations, has recently attracted great attention owing to increasing evidence for its topological nature, thereby harboring protected surface states. However, corroborative spectroscopic evidence is still lacking, unlike in the weakly correlated counterparts, including Bi2Se3 Here, we report results from planar tunneling that unveil the detailed spectroscopic properties of SmB6 The tunneling conductance obtained on the (001) and (011) single crystal surfaces reveals linear density of states as expected for two and one Dirac cone(s), respectively. Quite remarkably, it is found that these topological states are not protected completely within the bulk hybridization gap. A phenomenological model of the tunneling process invoking interaction of the surface states with bulk excitations (spin excitons), as predicted by a recent theory, provides a consistent explanation for all of the observed features. Our spectroscopic study supports and explains the proposed picture of the incompletely protected surface states in this topological Kondo insulator SmB6.

  19. Ultrafast Optical Excitation of a Persistent Surface-State Population in the Topological Insulator Bi2Se3

    Energy Technology Data Exchange (ETDEWEB)

    Sobota, Jonathan

    2012-03-14

    Using femtosecond time- and angle-resolved photoemission spectroscopy, we investigated the nonequilibrium dynamics of the topological insulator Bi{sub 2}Se{sub 3}. We studied p-type Bi{sub 2}Se{sub 3}, in which the metallic Dirac surface state and bulk conduction bands are unoccupied. Optical excitation leads to a meta-stable population at the bulk conduction band edge, which feeds a nonequilibrium population of the surface state persisting for >10 ps. This unusually long-lived population of a metallic Dirac surface state with spin texture may present a channel in which to drive transient spin-polarized currents.

  20. Lessons learned from the development and manufacture of ceramic reusable surface insulation materials for the space shuttle orbiters

    Science.gov (United States)

    Banas, R. P.; Elgin, D. R.; Cordia, E. R.; Nickel, K. N.; Gzowski, E. R.; Aguiler, L.

    1983-01-01

    Three ceramic, reusable surface insulation materials and two borosilicate glass coatings were used in the fabrication of tiles for the Space Shuttle orbiters. Approximately 77,000 tiles were made from these materials for the first three orbiters, Columbia, Challenger, and Discovery. Lessons learned in the development, scale up to production and manufacturing phases of these materials will benefit future production of ceramic reusable surface insulation materials. Processing of raw materials into tile blanks and coating slurries; programming and machining of tiles using numerical controlled milling machines; preparing and spraying tiles with the two coatings; and controlling material shrinkage during the high temperature (2100-2275 F) coating glazing cycles are among the topics discussed.

  1. 2D particle-in-cell simulation of the entire process of surface flashover on insulator in vacuum

    Science.gov (United States)

    Wang, Hongguang; Zhang, Jianwei; Li, Yongdong; Lin, Shu; Zhong, Pengfeng; Liu, Chunliang

    2018-04-01

    With the introduction of an external circuit model and a gas desorption model, the surface flashover on the plane insulator-vacuum interface perpendicular to parallel electrodes is simulated by a Particle-In-Cell method. It can be seen from simulations that when the secondary electron emission avalanche (SEEA) occurs, the current sharply increases because of the influence of the insulator surface charge on the cathode field emission. With the introduction of the gas desorption model, the current keeps on increasing after SEEA, and then the feedback of the external circuit causes the voltage between the two electrodes to decrease. The cathode emission current decreases, while the anode current keeps growing. With the definition that flashover occurs when the diode voltage drops by more than 20%, we obtained the simulated flashover voltage which agrees with the experimental value with the use of the field enhancement factor β = 145 and the gas molecule desorption coefficient γ=0.25 . From the simulation results, we can also see that the time delay of flashover decreases exponentially with voltage. In addition, from the gas desorption model, the gas density on the insulator surface is found to be proportional to the square of the gas desorption rate and linear with time.

  2. Metal-insulator transitions in IZO, IGZO, and ITZO films

    Energy Technology Data Exchange (ETDEWEB)

    Makise, Kazumasa, E-mail: makise@nict.go.jp [National Institute of Information and Communications Technology, Kobe 651-2492 (Japan); Hidaka, Kazuya; Ezaki, Syohei; Asano, Takayuki; Shinozaki, Bunju [Department of Physics, Kyushu University, Fukuoka 810-8560 (Japan); Tomai, Shigekazu; Yano, Koki; Nakamura, Hiroaki [Central Research Laboratories, Idemitsu Kosan Co. Ltd, Chiba 299-0293 (Japan)

    2014-10-21

    In this study, we measured the low-temperature resistivity of amorphous two- and three-dimensional (2D and 3D) indium-zinc oxide, indium-gallium-zinc oxide, and indium-tin-zinc oxide films with a wide range of carrier densities. To determine their critical characteristics at the metal-insulator transition (MIT), we used the Ioffe–Regel criterion. We found that the MIT occurs in a narrow range between k{sub F}ℓ =0.13 and k{sub F}ℓ =0.25, where k{sub F} and ℓ are the Fermi wave number and electron mean free path, respectively. For films in the insulating region, we analyzed ρ(T) using a procedure proposed by Zabrodskii and Zinov'eva. This analysis confirmed the occurrence of Mott and Efros–Shklovskii (ES) variable-range hopping. The materials studied show crossover behavior from exp(T{sub Mott}/T){sup 1/4} or exp(T{sub Mott}/T){sup 1/3} for Mott hopping conduction to exp(T{sub ES}/T){sup 1/2} for ES hopping conduction with decreasing temperature. For both 2D and 3D materials, we found that the relationship between T{sub Mott} and T{sub ES} satisfies T{sub ES}∝T{sub Mott}{sup 2/3}.

  3. High-Resolution Faraday Rotation and Electron-Phonon Coupling in Surface States of the Bulk-Insulating Topological Insulator Cu_{0.02}Bi_{2}Se_{3}.

    Science.gov (United States)

    Wu, Liang; Tse, Wang-Kong; Brahlek, M; Morris, C M; Aguilar, R Valdés; Koirala, N; Oh, S; Armitage, N P

    2015-11-20

    We have utilized time-domain magnetoterahertz spectroscopy to investigate the low-frequency optical response of the topological insulator Cu_{0.02}Bi_{2}Se_{3} and Bi_{2}Se_{3} films. With both field and frequency dependence, such experiments give sufficient information to measure the mobility and carrier density of multiple conduction channels simultaneously. We observe sharp cyclotron resonances (CRs) in both materials. The small amount of Cu incorporated into the Cu_{0.02}Bi_{2}Se_{3} induces a true bulk insulator with only a single type of conduction with a total sheet carrier density of ~4.9×10^{12}/cm^{2} and mobility as high as 4000 cm^{2}/V·s. This is consistent with conduction from two virtually identical topological surface states (TSSs) on the top and bottom of the film with a chemical potential ~145 meV above the Dirac point and in the bulk gap. The CR broadens at high fields, an effect that we attribute to an electron-phonon interaction. This assignment is supported by an extended Drude model analysis of the zero-field Drude conductance. In contrast, in normal Bi_{2}Se_{3} films, two conduction channels were observed, and we developed a self-consistent analysis method to distinguish the dominant TSSs and coexisting trivial bulk or two-dimensional electron gas states. Our high-resolution Faraday rotation spectroscopy on Cu_{0.02}Bi_{2}Se_{3} paves the way for the observation of quantized Faraday rotation under experimentally achievable conditions to push the chemical potential in the lowest Landau level.

  4. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory

    International Nuclear Information System (INIS)

    Balzer, Matthias

    2008-01-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  5. Surface potential measurement of the insulator with secondary electron caused by negative ion implantation

    International Nuclear Information System (INIS)

    Tsuji, Hiroshi; Toyota, Yoshitaka; Nagumo, Syoji; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kohji.

    1994-01-01

    Ion implantation has the merit of the good controllability of implantation profile and low temperature process, and has been utilized for the impurity introduction in LSI production. However, positive ion implantation is carried out for insulator or insulated conductor substrates, their charged potential rises, which is a serious problem. As the requirement for them advanced, charge compensation method is not the effective means for resolving it. The negative ion implantation in which charging is little was proposed. When the experiment on the negative ion implantation into insulated conductors was carried out, it was verified that negative ion implantation is effective as the implantation process without charging. The method of determining the charged potential of insulators at the time of negative ion implantation by paying attention to the energy distribution of the secondary electrons emitted from substrates at the time was devised. The energy analyzer for measuring the energy distribution of secondary electrons was made, and the measurement of the charged potential of insulators was carried out. The principle of the measurement, the measuring system and the experimental results are reported. (K.I.)

  6. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Science.gov (United States)

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  7. Proximity induced ferromagnetism, superconductivity, and finite-size effects on the surface states of topological insulator nanostructures

    Science.gov (United States)

    Sengupta, Parijat; Kubis, Tillmann; Tan, Yaohua; Klimeck, Gerhard

    2015-01-01

    Bi2Te3 and Bi2Se3 are well known 3D-topological insulators (TI). Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as building blocks for a variety of applications that involve tuning their dispersion relationship and opening a band gap. A band gap can be opened either by breaking time reversal symmetry, the proximity effect of a superconductor or ferromagnet or adjusting the dimensionality of the TI material. In this work, methods that can be employed to easily open a band gap for the TI surface states are assessed. Two approaches are described: (1) Coating the surface states with a ferromagnet which has a controllable magnetization axis. The magnetization strength of the ferromagnet is incorporated as an exchange interaction term in the Hamiltonian. (2) An s-wave superconductor, because of the proximity effect, when coupled to a 3D-TI opens a band gap on the surface. Finally, the hybridization of the surface Dirac cones can be controlled by reducing the thickness of the topological insulator film. It is shown that this alters the band gap significantly.

  8. Valence band structure of PDMS surface and a blend with MWCNTs: A UPS and MIES study of an insulating polymer

    Energy Technology Data Exchange (ETDEWEB)

    Schmerl, Natalya M.; Khodakov, Dmitriy A.; Stapleton, Andrew J.; Ellis, Amanda V.; Andersson, Gunther G., E-mail: gunther.andersson@flinders.edu.au

    2015-10-30

    Graphical abstract: - Highlights: • Valence electron spectroscopy was performed on an insulating polymer using different charge compensation methods. • MWCNT were embedded in PDMS and found to be the most effective method for reducing the charging of the insulating polymer. • The valence band spectrum of PDMS was obtained via MIES and UPS. • Ion scattering spectroscopy was used to determine the concentration depth profile of the PDMS in the sample. - Abstract: The use of polydimethylsiloxane (PDMS) is increasing with new technologies working toward compact, flexible and transparent devices for use in medical and microfluidic systems. Electronic characterization of PDMS and other insulating materials is difficult due to charging, yet necessary for many applications where the interfacial structure is vital to device function or further modification. The outermost layer in particular is of importance as this is the area where chemical reactions such as surface functionalization will occur. Here, we investigate the valence band structure of the outermost layer and near surface area of PDMS through the use of metastable induced photoelectron spectroscopy (MIES) paired with ultraviolet photoelectron spectroscopy (UPS). The chemical composition of the samples under investigation were measured via X-ray photoelectron spectroscopy (XPS), and the vertical distribution of the polymer was shown with neutral impact collision ion scattering spectroscopy (NICISS). Three separate methods for charge compensation are used for the samples, and their effectiveness is compared.

  9. The effect of van der Waal's gap expansions on the surface electronic structure of layered topological insulators

    International Nuclear Information System (INIS)

    Eremeev, S V; Vergniory, M G; Chulkov, E V; Menshchikova, T V; Shaposhnikov, A A

    2012-01-01

    On the basis of relativistic ab initio calculations, we show that an expansion of van der Waal's (vdW) spacings in layered topological insulators caused by intercalation of deposited atoms, leads to the simultaneous emergence of parabolic and M-shaped two-dimensional electron gas (2DEG) bands as well as Rashba-splitting of the former states. The expansion of vdW spacings and the emergence of the 2DEG states localized in the (sub)surface region are also accompanied by a relocation of the topological surface state to the lower quintuple layers, that can explain the absence of inter-band scattering found experimentally. (paper)

  10. The impact of nano-coating on surface charge accumulation of epoxy resin insulator: characteristic and mechanism

    Science.gov (United States)

    Qi, Bo; Gao, Chunjia; Lv, Yuzhen; Li, Chengrong; Tu, Youping; Xiong, Jun

    2018-06-01

    The flashover phenomenon of the insulator is the main cause for insulating failure of GIS/GIL, and one of the most critical impacting factors is the accumulation of surface charge. The common methods to restrain the surface charge accumulation are reviewed in this paper. Through the reasonable comparison and analysis of these methods, nano-coatings for the insulator were selected as a way to restrain the surface charge accumulation. Based on this, six nano-coated epoxy resin samples with different concentrations of P25-TiO2 nanoparticles were produced. A high precision 3D surface charge measurement system was developed in this paper with a spatial resolution of 4.0 mm2 and a charge resolution of 0.01 µC (m2 · mV)‑1. The experimental results for the epoxy resin sample showed that with the concentration of nanoparticles of the coating material increasing, the surface charge density tended to first decrease and then increase. In the sample coated with 0.5% concentration of nanoparticles, the suppression effect is the optimum, leading to a 63.8% reduction of charge density under DC voltage. The application test for actual nano-coated GIS/GIL basin insulator indicated that the maximum suppression degree for the charge density under DC voltage could reach 48.3%, while it could reach 22.2% for switching impulse voltage and 12.5% for AC context. The control mechanism of nano-coatings on charge accumulation was proposed based on the analysis for surface morphology features and traps characteristics; the shallow traps dominate in the migration of charges while the deep traps operate on the charge accumulation. With the concentration of nanoparticles in nano-coating material mounting up, the density of shallow traps continuously increases, while for deep traps, it first decreases and then increases. For the sample with 0.5% concentration of nanoparticles coated, the competition between shallow traps and deep traps comes to the most balanced state, producing the most

  11. Electronic Correlations, Jahn-Teller Distortions and Mott Transition to Superconductivity in Alkali-C60 Compounds

    Directory of Open Access Journals (Sweden)

    Alloul H.

    2012-03-01

    Full Text Available The discovery in 1991 of high temperature superconductivity (SC in A3C60 compounds, where A is an alkali ion, has been rapidly ascribed to a BCS mechanism, in which the pairing is mediated by on ball optical phonon modes. While this has lead to consider that electronic correlations were not important in these compounds, further studies of various AnC60 with n=1, 2, 4 allowed to evidence that their electronic properties cannot be explained by a simple progressive band filling of the C60 six-fold degenerate t1u molecular level. This could only be ascribed to the simultaneous influence of electron correlations and Jahn-Teller Distortions (JTD of the C60 ball, which energetically favour evenly charged C60 molecules. This is underlined by the recent discovery of two expanded fulleride Cs3C60 isomeric phases which are Mott insulators at ambient pressure. Both phases undergo a pressure induced first order Mott transition to SC with a (p, T phase diagram displaying a dome shaped SC, a common situation encountered nowadays in correlated electron systems. NMR experiments allowed us to study the magnetic properties of the Mott phases and to evidence clear deviations from BCS expectations near the Mott transition. So, although SC involves an electron-phonon mechanism, the incidence of electron correlations has an importance on the electronic properties, as had been anticipated from DMFT calculations.

  12. Spin injection and inverse Edelstein effect in the surface states of topological Kondo insulator SmB6

    Science.gov (United States)

    Song, Qi; Mi, Jian; Zhao, Dan; Su, Tang; Yuan, Wei; Xing, Wenyu; Chen, Yangyang; Wang, Tianyu; Wu, Tao; Chen, Xian Hui; Xie, X. C.; Zhang, Chi; Shi, Jing; Han, Wei

    2016-01-01

    There has been considerable interest in exploiting the spin degrees of freedom of electrons for potential information storage and computing technologies. Topological insulators (TIs), a class of quantum materials, have special gapless edge/surface states, where the spin polarization of the Dirac fermions is locked to the momentum direction. This spin–momentum locking property gives rise to very interesting spin-dependent physical phenomena such as the Edelstein and inverse Edelstein effects. However, the spin injection in pure surface states of TI is very challenging because of the coexistence of the highly conducting bulk states. Here, we experimentally demonstrate the spin injection and observe the inverse Edelstein effect in the surface states of a topological Kondo insulator, SmB6. At low temperatures when only surface carriers are present, a clear spin signal is observed. Furthermore, the magnetic field angle dependence of the spin signal is consistent with spin–momentum locking property of surface states of SmB6. PMID:27834378

  13. On the formation of hollow atoms in front of an insulating LiF surface

    NARCIS (Netherlands)

    Limburg, J; Hoekstra, R; Morgenstern, R; Kurz, H; Vana, M; Aumayr, F; Winter, HP

    KLL Auger spectra of hydrogenic (Is) N, O and Ne ions impinging on an insulating LiF(100) single crystal are presented. Beam energy and incident angle have been varied such that the lowest possible velocity towards the target is achieved, at the same time varying the velocity parallel to the target

  14. Self-assembled diacetylene molecular wire polymerization on an insulating hexagonal boron nitride (0001) surface

    Czech Academy of Sciences Publication Activity Database

    Makarova, Marina; Okawa, Y.; Verveniotis, E.; Watanabe, K.; Taniguchi, T.; Joachim, Ch.; Aono, M.

    2016-01-01

    Roč. 27, č. 39 (2016), 1-8, č. článku 395303. ISSN 0957-4484 Institutional support: RVO:68378271 Keywords : molecular self-assembly * insulating substrate * molecular electronics * polydiacetylene Subject RIV: BJ - Thermodynamics Impact factor: 3.440, year: 2016

  15. Orbital-selective Mott phase of Cu-substituted iron-based superconductors

    International Nuclear Information System (INIS)

    Liu, Yang; Zhao, Yang-Yang; Song, Yun

    2016-01-01

    We study the phase transition in Cu-substituted iron-based superconductors with a new developed real-space Green’s function method. We find that Cu substitution has strong effect on the orbital-selective Mott transition introduced by the Hund’s rule coupling. The redistribution of the orbital occupancy which is caused by the increase of the Hund’s rule coupling, gives rise to the Mott–Hubbard metal-insulator transition in the half-filled d xy orbital. We also find that more and more electronic states appear inside that Mott gap of the d xy orbital with the increase of Cu substitution, and the in-gap states around the Fermi level are strongly localized at some specific lattice sites. Further, a distinctive phase diagram, obtained for the Cu-substituted Fe-based superconductors, displays an orbital-selective insulating phase, as a result of the cooperative effect of the Hund’s rule coupling and the impurity-induced disorder. (paper)

  16. Surface quantum oscillations and weak antilocalization effect in topological insulator (Bi0.3Sb0.7)2Te3

    Science.gov (United States)

    Urkude, Rajashri; Rawat, Rajeev; Palikundwar, Umesh

    2018-04-01

    In 3D topological insulators, achieving a genuine bulk-insulating state is an important topic of research. The material system (Bi,Sb)2(Te,Se)3 has been proposed as a topological insulator with high resistivity and low carrier concentration. Topological insulators are predicted to present interesting surface transport phenomena but their experimental studies have been hindered by metallic bulk conduction that overwhelms the surface transport. Here we present a study of the bulk-insulating properties of (Bi0.3Sb0.7)2Te3. We show that a high resistivity exceeding 1 Ωm as a result of variable-range hopping behavior of state and Shubnikov-de Haas oscillations as coming from the topological surface state. We have been able to clarify both the bulk and surface transport channels, establishing a comprehensive understanding of the transport properties in this material. Our results demonstrate that (Bi0.3Sb0.7)2Te3 is a good material for studying the surface quantum transport in a topological insulator.

  17. Surface charge conductivity of a topological insulator in a magnetic field: The effect of hexagonal warping

    Science.gov (United States)

    Akzyanov, R. S.; Rakhmanov, A. L.

    2018-02-01

    We investigate the influence of hexagonal warping on the transport properties of topological insulators. We study the charge conductivity within Kubo formalism in the first Born approximation using low-energy expansion of the Hamiltonian near the Dirac point. The effects of disorder, magnetic field, and chemical-potential value are analyzed in detail. We find that the presence of hexagonal warping significantly affects the conductivity of the topological insulator. In particular, it gives rise to the growth of the longitudinal conductivity with the increase of the disorder and anisotropic anomalous in-plane magnetoresistance. Hexagonal warping also affects the quantum anomalous Hall effect and anomalous out-of-plane magnetoresistance. The obtained results are consistent with the experimental data.

  18. Experimental study of surface insulated-standard hybrid tungsten planar wire array Z-pinches at “QiangGuang-I” facility

    Energy Technology Data Exchange (ETDEWEB)

    Sheng, Liang; Peng, Bodong; Yuan, Yuan; Zhang, Mei; Zhao, Chen; Zhao, Jizhen; Wang, Liangping [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi' an 710024 (China); Li, Yang, E-mail: liyang@nint.ac.cn; Li, Mo [State Key Laboratory of Intense Pulsed Radiation Simulation and Effect (Northwest Institute of Nuclear Technology), Xi' an 710024 (China); Xi' an Jiaotong University, Xi' an 710049 (China)

    2016-01-15

    The experimental results of the insulated-standard hybrid wire array Z pinches carried out on “QiangGuang-I” facility at Northwest Institute of Nuclear Technology were presented and discussed. The surface insulating can impose a significant influence on the dynamics and radiation characteristics of the hybrid wire array Z pinches, especially on the early stage (t/t{sub imp} < 0.6). The expansion of insulated wires at the ablation stage is suppressed, while the streams stripped from the insulated wires move faster than that from the standard wires. The foot radiation of X-ray is enhanced by increment of the number of insulated wires, 19.6 GW, 33.6 GW, and 68.6 GW for shots 14037S, 14028H, and 14039I, respectively. The surface insulation also introduces nonhomogeneity along the single wire—the streams move much faster near the electrodes. The colliding boundary of the hybrid wire array Z pinches is bias to the insulated side approximately 0.6 mm.

  19. Radiation induced ion currents in vacuum due to residual He and H, and their expected effect on insulating surfaces

    International Nuclear Information System (INIS)

    Hodgson, E.R.; Morono, A.; Gonzalez de Vicente, S.M.

    2006-01-01

    Ceramic insulators and windows in ITER will be subjected to bombardment by energetic hydrogen isotopes and helium as a consequence of ionization of the residual gas by gamma radiation and acceleration of the ions by the local electric fields. Most of the energy carried by these particles will be deposited at or very near the surface giving rise to possible electrical and optical degradation. Severe surface electrical degradation has recently been observed when oxide materials are implanted to low doses (10 15 ions/cm 2 ) with protons and alpha particles at temperatures between 50 and 450 o C. In order to estimate the relevance to fusion applications and hence the lifetime of ceramic insulators in ITER it is necessary to quantify possible ion currents generated in the residual gas by measuring radiation induced electrical conductivity for hydrogen isotopes and helium gases at low pressures and then perform experiments in which ceramic candidate materials are subjected to ion bombardment at representative currents and energies. To determine the magnitude of radiation generated ion currents, experiments have been carried out in a special gas chamber mounted in the beam line of a 2 MeV Van de Graaff electron accelerator, with the gases being irradiated through an 0.05 x 10 -3 m thick aluminium window with 1.8 MeV electrons. A guarded volume was defined between two parallel square copper plate electrodes separated by 1.5 x 10 -2 m. The experimental set-up permitted an electric field to be applied to the irradiated volume of gas, and the electric current flowing through the ionized gas to be measured. For these experiments the radiation beam was perpendicular to the electric field direction. In this way radiation induced conductivity for helium and hydrogen has been measured at pressures between about 1000 and 10 -3 mbar (10 -5 to 10 -1 Pa), radiation dose rates of 30 Gy/s and applied voltages up to 1500 volts. The radiation induced electrical currents for low pressure

  20. Spin-related tunneling through a nanostructured electric-magnetic barrier on the surface of a topological insulator.

    Science.gov (United States)

    Wu, Zhenhua; Li, Jun

    2012-01-27

    We investigate quantum tunneling through a single electric and/or magnetic barrier on the surface of a three-dimensional topological insulator. We found that (1) the propagating behavior of electrons in such system exhibits a strong dependence on the direction of the incident electron wavevector and incident energy, giving the possibility to construct a wave vector and/or energy filter; (2) the spin orientation can be tuned by changing the magnetic barrier structure as well as the incident angles and energies.PACS numbers: 72.25.Dc; 73.20.-r; 73.23.-b; 75.70.-i.

  1. Charge and spin transport in edge channels of a ν=0 quantum Hall system on the surface of topological insulators.

    Science.gov (United States)

    Morimoto, Takahiro; Furusaki, Akira; Nagaosa, Naoto

    2015-04-10

    Three-dimensional topological insulators of finite thickness can show the quantum Hall effect (QHE) at the filling factor ν=0 under an external magnetic field if there is a finite potential difference between the top and bottom surfaces. We calculate energy spectra of surface Weyl fermions in the ν=0 QHE and find that gapped edge states with helical spin structure are formed from Weyl fermions on the side surfaces under certain conditions. These edge channels account for the nonlocal charge transport in the ν=0 QHE which is observed in a recent experiment on (Bi_{1-x}Sb_{x})_{2}Te_{3} films. The edge channels also support spin transport due to the spin-momentum locking. We propose an experimental setup to observe various spintronics functions such as spin transport and spin conversion.

  2. Faraday Rotation Due to Surface States in the Topological Insulator (Bi1-xSbx)2Te3.

    Science.gov (United States)

    Shao, Yinming; Post, Kirk W; Wu, Jhih-Sheng; Dai, Siyuan; Frenzel, Alex J; Richardella, Anthony R; Lee, Joon Sue; Samarth, Nitin; Fogler, Michael M; Balatsky, Alexander V; Kharzeev, Dmitri E; Basov, D N

    2017-02-08

    Using magneto-infrared spectroscopy, we have explored the charge dynamics of (Bi,Sb) 2 Te 3 thin films on InP substrates. From the magneto-transmission data we extracted three distinct cyclotron resonance (CR) energies that are all apparent in the broad band Faraday rotation (FR) spectra. This comprehensive FR-CR data set has allowed us to isolate the response of the bulk states from the intrinsic surface states associated with both the top and bottom surfaces of the film. The FR data uncovered that electron- and hole-type Dirac Fermions reside on opposite surfaces of our films, which paves the way for observing many exotic quantum phenomena in topological insulators.

  3. The Statistical Fragmentation Theory of N. F. Mott

    Science.gov (United States)

    Grady, Dennis

    2004-07-01

    For a brief period during the height of World War II, Neville F. Mott left his position at the University of Bristol and headed up a concerted theoretical effort at Fort Halstead, UK, to investigate the operational science of weapons and armor technology. The seminal achievements resulting from the efforts of the participating scientists are extraordinary and have provided the basis for much of the continuing research in this field over the intervening six decades. N. F. Mott chose to study the phenomenon of the explosive-driven fragmentation of exploding shell cases. The approaches pursued by Mott are documented in several interim reports and open literature publications and offer a fascinating look into the insightful thinking and scientific methods of one of the preeminent physicists of the last century. This presentation offers a perspective into the several theoretical approaches pursued by Mott. In particular, the hallmark relation for the representation of exploding munitions fragmentation data to the present day is the Mott distribution. The efforts of Mott leading to this distribution are explored and a judgment is offered as to whether Mott himself would use this distribution today.

  4. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface

    Science.gov (United States)

    Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang; Dai, Xi; Fang, Zhong; Zhang, Shou-Cheng

    2009-06-01

    Topological insulators are new states of quantum matter in which surface states residing in the bulk insulating gap of such systems are protected by time-reversal symmetry. The study of such states was originally inspired by the robustness to scattering of conducting edge states in quantum Hall systems. Recently, such analogies have resulted in the discovery of topologically protected states in two-dimensional and three-dimensional band insulators with large spin-orbit coupling. So far, the only known three-dimensional topological insulator is BixSb1-x, which is an alloy with complex surface states. Here, we present the results of first-principles electronic structure calculations of the layered, stoichiometric crystals Sb2Te3, Sb2Se3, Bi2Te3 and Bi2Se3. Our calculations predict that Sb2Te3, Bi2Te3 and Bi2Se3 are topological insulators, whereas Sb2Se3 is not. These topological insulators have robust and simple surface states consisting of a single Dirac cone at the Γ point. In addition, we predict that Bi2Se3 has a topologically non-trivial energy gap of 0.3eV, which is larger than the energy scale of room temperature. We further present a simple and unified continuum model that captures the salient topological features of this class of materials.

  5. A highly efficient surface plasmon polaritons excitation achieved with a metal-coupled metal-insulator-metal waveguide

    Directory of Open Access Journals (Sweden)

    Hongyan Yang

    2014-12-01

    Full Text Available We propose a novel metal-coupled metal-insulator-metal (MC-MIM waveguide which can achieve a highly efficient surface plasmon polaritons (SPPs excitation. The MC-MIM waveguide is formed by inserting a thin metal film in the insulator of an MIM. The introduction of the metal film, functioning as an SPPs coupler, provides a space for the interaction between SPPs and a confined electromagnetic field of the intermediate metal surface, which makes energy change and phase transfer in the metal-dielectric interface, due to the joint action of incomplete electrostatic shielding effect and SPPs coupling. Impacts of the metal film with different materials and various thickness on SPPs excitation are investigated. It is shown that the highest efficient SPPs excitation is obtained when the gold film thickness is 60 nm. The effect of refractive index of upper and lower symmetric dielectric layer on SPPs excitation is also discussed. The result shows that the decay value of refractive index is 0.3. Our results indicate that this proposed MC-MIM waveguide may offer great potential in designing a new SPPs source.

  6. Effects of Disorder on the Pressure-Induced Mott Transition in κ-(BEDT-TTF2Cu[N(CN2]Cl

    Directory of Open Access Journals (Sweden)

    Elena Gati

    2018-01-01

    Full Text Available We present a study of the influence of disorder on the Mott metal-insulator transition for the organic charge-transfer salt κ -(BEDT-TTF 2 Cu[N(CN 2 ]Cl. To this end, disorder was introduced into the system in a controlled way by exposing the single crystals to X-ray irradiation. The crystals were then fine-tuned across the Mott transition by the application of continuously controllable He-gas pressure at low temperatures. Measurements of the thermal expansion and resistance show that the first-order character of the Mott transition prevails for low irradiation doses achieved by irradiation times up to 100 h. For these crystals with a moderate degree of disorder, we find a first-order transition line which ends in a second-order critical endpoint, akin to the pristine crystals. Compared to the latter, however, we observe a significant reduction of both, the critical pressure p c and the critical temperature T c . This result is consistent with the theoretically-predicted formation of a soft Coulomb gap in the presence of strong correlations and small disorder. Furthermore, we demonstrate, similar to the observation for the pristine sample, that the Mott transition after 50 h of irradiation is accompanied by sizable lattice effects, the critical behavior of which can be well described by mean-field theory. Our results demonstrate that the character of the Mott transition remains essentially unchanged at a low disorder level. However, after an irradiation time of 150 h, no clear signatures of a discontinuous metal-insulator transition could be revealed anymore. These results suggest that, above a certain disorder level, the metal-insulator transition becomes a smeared first-order transition with some residual hysteresis.

  7. Reliability of the one-crossing approximation in describing the Mott transition

    International Nuclear Information System (INIS)

    Vildosola, V; Roura-Bas, P; Pourovskii, L V; Manuel, L O

    2015-01-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal–insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed. (paper)

  8. Reliability of the one-crossing approximation in describing the Mott transition

    Science.gov (United States)

    Vildosola, V.; Pourovskii, L. V.; Manuel, L. O.; Roura-Bas, P.

    2015-12-01

    We assess the reliability of the one-crossing approximation (OCA) approach in a quantitative description of the Mott transition in the framework of the dynamical mean field theory (DMFT). The OCA approach has been applied in conjunction with DMFT to a number of heavy-fermion, actinide, transition metal compounds and nanoscale systems. However, several recent studies in the framework of impurity models pointed out serious deficiencies of OCA and raised questions regarding its reliability. Here we consider a single band Hubbard model on the Bethe lattice at finite temperatures and compare the results of OCA to those of a numerically exact quantum Monte Carlo (QMC) method. The temperature-local repulsion U phase diagram for the particle-hole symmetric case obtained by OCA is in good agreement with that of QMC, with the metal-insulator transition captured very well. We find, however, that the insulator to metal transition is shifted to higher values of U and, simultaneously, correlations in the metallic phase are significantly overestimated. This counter-intuitive behaviour is due to simultaneous underestimations of the Kondo scale in the metallic phase and the size of the insulating gap. We trace the underestimation of the insulating gap to that of the second moment of the high-frequency expansion of the impurity spectral density. Calculations of the system away from the particle-hole symmetric case are also presented and discussed.

  9. Effect of surface states on electrical characteristic of metal - insulator - semiconductor (MIS) diodes

    International Nuclear Information System (INIS)

    Altindal, S.; Doekme, I.; Tataroglu, A.; Sahingoez, R.

    2002-01-01

    The current-voltage (I-V) characteristics of Metal-Insulator-Semiconductor (MIS) Schottky barrier diodes which is consider distribution of interface states in equilibrium with semiconductor were determined at two (low and high) temperature. The interface states were responsible for non-ideal behavior of the forward I-V characteristic of diodes. Both diodes (n and p type Si) showed non-ideal behavior with an ideality factor 1.6 and 1.85 respectively at room temperature. The higher values of n-type Si were attributed to an order of magnitude higher density of interface states in the both diodes. The effect of an interfacial insulator layer between the metal and semiconductor are also studied. The high density of interface states also caused a reduction in the barrier height of the MIS diode. It is shown that by using Norde function at low and high temperature, barrier height □ b , series resistance R s and ideality factor n can be determined even in the case 1 s obtained from Norde function strongly depend on temperature, and decrease with increasing temperature. In addition, the potential barrier height increases with increasing temperature. The mean density of interface states N ss decreases with increasing temperature. Particularly at low temperature the I-V characteristics are controlled by interface states density

  10. Improvement of Surface Flashover Performance of Al2O3 Ceramics in Vacuum by Adopting A-B-A Insulation System

    International Nuclear Information System (INIS)

    Li Shengtao; Zhang Tuo; Huang Qifeng; Li Weiwei; Ni Fengyan; Li Jianying

    2011-01-01

    A new insulation system with inorganic A-B-A insulators was proposed to improve the surface flashover performance in vacuum. Inorganic A-B-A insulator samples of Mo/Al 2 O 3 cermet-Al 2 O 3 ceramic-Mo/Al 2 O 3 cermet were prepared, in which the conductivity and permittivity of the Mo/Al 2 O 3 cermets were controlled through different amount of metallic molybdenum powder added. The effects of both conductivity and permittivity of Mo/Al 2 O 3 cermets on the DC and impulse surface flashover voltage in vacuum were experimentally investigated. The result showed that the DC and impulse surface flashover voltage were improved by 52% and 95%, respectively. For the distribution of electric field, two triple junctions, i.e., vacuum-layer A-cathode (TJ1) and vacuum-layer A-layer B (TJ2) were prepared with the introduction of layer A into the A-B-A insulation system. Based on the electric field distribution obtained via electrostatic field simulation and Maxwell-Wagner three-layer model, the electric field of TJ1 decreases while that of TJ2 increases with the increase in conductivity and permittivity of layer A under applied DC and impulse voltage, respectively. Therefore, the improvement of surface flashover performance of A-B-A insulators has been reasonably explained. (fusion engineering)

  11. Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing

    Science.gov (United States)

    Kumar, Suhas; Strachan, John Paul; Williams, R. Stanley

    2017-08-01

    At present, machine learning systems use simplified neuron models that lack the rich nonlinear phenomena observed in biological systems, which display spatio-temporal cooperative dynamics. There is evidence that neurons operate in a regime called the edge of chaos that may be central to complexity, learning efficiency, adaptability and analogue (non-Boolean) computation in brains. Neural networks have exhibited enhanced computational complexity when operated at the edge of chaos, and networks of chaotic elements have been proposed for solving combinatorial or global optimization problems. Thus, a source of controllable chaotic behaviour that can be incorporated into a neural-inspired circuit may be an essential component of future computational systems. Such chaotic elements have been simulated using elaborate transistor circuits that simulate known equations of chaos, but an experimental realization of chaotic dynamics from a single scalable electronic device has been lacking. Here we describe niobium dioxide (NbO2) Mott memristors each less than 100 nanometres across that exhibit both a nonlinear-transport-driven current-controlled negative differential resistance and a Mott-transition-driven temperature-controlled negative differential resistance. Mott materials have a temperature-dependent metal-insulator transition that acts as an electronic switch, which introduces a history-dependent resistance into the device. We incorporate these memristors into a relaxation oscillator and observe a tunable range of periodic and chaotic self-oscillations. We show that the nonlinear current transport coupled with thermal fluctuations at the nanoscale generates chaotic oscillations. Such memristors could be useful in certain types of neural-inspired computation by introducing a pseudo-random signal that prevents global synchronization and could also assist in finding a global minimum during a constrained search. We specifically demonstrate that incorporating such

  12. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    Science.gov (United States)

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  13. Measurement of the quantum capacitance from two-dimensional surface state of a topological insulator at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyunwoo, E-mail: chw0089@gmail.com [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of); Shin, Changhwan, E-mail: cshin@uos.ac.kr [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of)

    2017-06-15

    Highlights: • The quantum capacitance in topological insulator (TI) at room temperature is directly revealed. • The physical origin of quantum capacitance, the two dimensional surface state of TI, is experimentally validated. • Theoretically calculated results of ideal quantum capacitance can well predict the experimental data. - Abstract: A topological insulator (TI) is a new kind of material that exhibits unique electronic properties owing to its topological surface state (TSS). Previous studies focused on the transport properties of the TSS, since it can be used as the active channel layer in metal-oxide-semiconductor field-effect transistors (MOSFETs). However, a TI with a negative quantum capacitance (QC) effect can be used in the gate stack of MOSFETs, thereby facilitating the creation of ultra-low power electronics. Therefore, it is important to study the physics behind the QC in TIs in the absence of any external magnetic field, at room temperature. We fabricated a simple capacitor structure using a TI (TI-capacitor: Au-TI-SiO{sub 2}-Si), which shows clear evidence of QC at room temperature. In the capacitance-voltage (C-V) measurement, the total capacitance of the TI-capacitor increases in the accumulation regime, since QC is the dominant capacitive component in the series capacitor model (i.e., C{sub T}{sup −1} = C{sub Q}{sup −1} + C{sub SiO2}{sup −1}). Based on the QC model of the two-dimensional electron systems, we quantitatively calculated the QC, and observed that the simulated C-V curve theoretically supports the conclusion that the QC of the TI-capacitor is originated from electron–electron interaction in the two-dimensional surface state of the TI.

  14. Fabrication of Al2O3 Nano-Structure Functional Film on a Cellulose Insulation Polymer Surface and Its Space Charge Suppression Effect

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2017-10-01

    Full Text Available Cellulose insulation polymer (paper/pressboard has been widely used in high voltage direct current (HVDC transformers. One of the most challenging issues in the insulation material used for HVDC equipment is the space charge accumulation. Effective ways to suppress the space charge injection/accumulation in insulation material is currently a popular research topic. In this study, an aluminium oxide functional film was deposited on a cellulose insulation pressboard surface using reactive radio frequency (RF magnetron sputtering. The sputtered thin film was characterized by the scanning electron microscopy/energy dispersive spectrometer (SEM/EDS, X-ray photoelectron spectroscopy (XPS, and X-ray diffraction (XRD. The influence of the deposited functional film on the dielectric properties and the space charge injection/accumulation behaviour was investigated. A preliminary exploration of the space charge suppression effect is discussed. SEM/EDS, XPS, and XRD results show that the nano-structured Al2O3 film with amorphous phase was successfully fabricated onto the fibre surface. The cellulose insulation pressboard surface sputtered by Al2O3 film has lower permittivity, conductivity, and dissipation factor values in the lower frequency (<103 Hz region. The oil-impregnated sputtered pressboard presents an apparent space-charge suppression effect. Compared with the pressboard sputtered with Al2O3 film for 90 min, the pressboard sputtered with Al2O3 film for 60 min had a better space charge suppression effect. Ultra-small Al2O3 particles (<10 nm grew on the surface of the larger nanoparticles. The nano-structured Al2O3 film sputtered on the fibre surface could act as a functional barrier layer for suppression of the charge injection and accumulation. This study offers a new perspective in favour of the application of insulation pressboard with a nano-structured function surface against space charge injection/accumulation in HVDC equipment.

  15. Resolving the chicken-and-egg problem in VO2: a new paradigm for the Mott transition

    Science.gov (United States)

    Najera, Oscar; Civelli, Marcello; Dobrosavljevi, Vladimir; Rozenberg, Marcelo

    We consider a minimal model to investigate the metal-insulator transition in VO2. We adopt a Hubbard model with two orbital per unit cell, which captures the competition between Mott and singlet-dimer localization. We solve the model within Dynamical Mean Field Theory, characterizing in detail the metal-insulator transition and finding new features in the electronic states. We compare our results with available experimental data obtaining good agreement in the relevant model parameter range. Crucially, we can account for puzzling optical conductivity data obtained within the hysteresis region, which we associate to a novel metallic state characterized by a split heavy quasiparticle band. Our results show that the thermal-driven insulator-to-metal transition in VO2 is entirely compatible with a Mott electronic mechanism, solving a long standing ''chicken-and-egg'' debate and calling for further research of ``Mottronics'' applications of this system. This work was partially supported by public Grants from the French National Research Agency (ANR), project LACUNES No ANR-13-BS04-0006-01, the NSF DMR-1005751 and DMR-1410132.

  16. Wall insulation system

    Energy Technology Data Exchange (ETDEWEB)

    Kostek, P.T.

    1987-08-11

    In a channel specially designed to fasten semi-rigid mineral fibre insulation to masonry walls, it is known to be constructed from 20 gauge galvanized steel or other suitable material. The channel is designed to have pre-punched holes along its length for fastening of the channel to the drywall screw. The unique feature of the channel is the teeth running along its length which are pressed into the surface of the butted together sections of the insulation providing a strong grip between the two adjacent pieces of insulation. Of prime importance to the success of this system is the recent technological advancements of the mineral fibre itself which allow the teeth of the channel to engage the insulation fully and hold without mechanical support, rather than be repelled or pushed back by the inherent nature of the insulation material. After the insulation is secured to the masonry wall by concrete nail fastening systems, the drywall is screwed to the channel.

  17. Evaluation of the density of the charge trapped in organic ferroelectric capacitors based on the Mott-Schottky model

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Won-Ho [Samsung Display Co. Ltd., Yongin (Korea, Republic of); Kwon, Jin-Hyuk; Park, Gyeong-Tae; Kim, Jae-Hyun; Bae, Jin-Hyuk [Kyungpook National University, Daegu (Korea, Republic of); Zhang, Xue; Park, Jae-Hoon [Hallym University, Chuncheon (Korea, Republic of)

    2014-09-15

    Organic ferroelectric capacitors were fabricated using pentacene and poly (vinylidene fluoride trifluoroethylene) (PVDF-TrFE) as an organic semiconductor and a ferroelectric material, respectively. A paraelectric poly(vinyl cinnamate) layer was adopted as an interlayer between the PVDFTrFE layer and the bottom electrode. The paraelectric interlayer induced a depolarization field opposite to the direction of the polarization formed in the ferroelectric PVDF-TrFE insulator, thereby suppressing spontaneous polarization. As a result, the Mott-Schottky model could be used to evaluate, from the extracted flat-band voltages, the density of the charge trapped in the organic ferroelectric capacitors.

  18. Filling- and interaction-driven Mott transition. Quantum cluster calculations within self-energy-functional theory; Fuellungs- und wechselwirkungsabhaengiger Mott-Uebergang. Quanten-Cluster-Rechnungen im Rahmen der Selbstenergiefunktional-Theorie

    Energy Technology Data Exchange (ETDEWEB)

    Balzer, Matthias

    2008-07-01

    The central goal of this thesis is the examination of strongly correlated electron systems on the basis of the two-dimensional Hubbard model. We analyze how the properties of the Mott insulator change upon doping and with interaction strength. The numerical evaluation is done using quantum cluster approximations, which allow for a thermodynamically consistent description of the ground state properties. The framework of self-energy-functional theory offers great flexibility for the construction of cluster approximations. A detailed analysis sheds light on the quality and the convergence properties of different cluster approximations within the self-energy-functional theory. We use the one-dimensional Hubbard model for these examinations and compare our results with the exact solution. In two dimensions the ground state of the particle-hole symmetric model at half-filling is an antiferromagnetic insulator, independent of the interaction strength. The inclusion of short-range spatial correlations by our cluster approach leads to a considerable improvement of the antiferromagnetic order parameter as compared to dynamical mean-field theory. In the paramagnetic phase we furthermore observe a metal-insulator transition as a function of the interaction strength, which qualitatively differs from the pure mean-field scenario. Starting from the antiferromagnetic Mott insulator a filling-controlled metal-insulator transition in a paramagnetic metallic phase can be observed. Depending on the cluster approximation used an antiferromagnetic metallic phase may occur at first. In addition to long-range antiferromagnetic order, we also considered superconductivity in our calculations. The superconducting order parameter as a function of doping is in good agreement with other numerical methods, as well as with experimental results. (orig.)

  19. Metal-insulator transitions

    Science.gov (United States)

    Imada, Masatoshi; Fujimori, Atsushi; Tokura, Yoshinori

    1998-10-01

    Metal-insulator transitions are accompanied by huge resistivity changes, even over tens of orders of magnitude, and are widely observed in condensed-matter systems. This article presents the observations and current understanding of the metal-insulator transition with a pedagogical introduction to the subject. Especially important are the transitions driven by correlation effects associated with the electron-electron interaction. The insulating phase caused by the correlation effects is categorized as the Mott Insulator. Near the transition point the metallic state shows fluctuations and orderings in the spin, charge, and orbital degrees of freedom. The properties of these metals are frequently quite different from those of ordinary metals, as measured by transport, optical, and magnetic probes. The review first describes theoretical approaches to the unusual metallic states and to the metal-insulator transition. The Fermi-liquid theory treats the correlations that can be adiabatically connected with the noninteracting picture. Strong-coupling models that do not require Fermi-liquid behavior have also been developed. Much work has also been done on the scaling theory of the transition. A central issue for this review is the evaluation of these approaches in simple theoretical systems such as the Hubbard model and t-J models. Another key issue is strong competition among various orderings as in the interplay of spin and orbital fluctuations. Experimentally, the unusual properties of the metallic state near the insulating transition have been most extensively studied in d-electron systems. In particular, there is revived interest in transition-metal oxides, motivated by the epoch-making findings of high-temperature superconductivity in cuprates and colossal magnetoresistance in manganites. The article reviews the rich phenomena of anomalous metallicity, taking as examples Ti, V, Cr, Mn, Fe, Co, Ni, Cu, and Ru compounds. The diverse phenomena include strong spin and

  20. Dynamic surface electronic reconstruction as symmetry-protected topological orders in topological insulator Bi2Se3

    Science.gov (United States)

    Shu, G. J.; Liou, S. C.; Karna, S. K.; Sankar, R.; Hayashi, M.; Chou, F. C.

    2018-04-01

    The layered narrow-band-gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling, which has been identified both as a good candidate for a thermoelectric material with high thermoelectric figure of merit (Z T ) and as a topological insulator of the Z2 type with a gapless surface band in a Dirac-cone shape. The existence of a conjugated π -bond system on the surface of each Bi2Se3 quintuple layer is proposed based on an extended valence bond model with valence electrons distributed in the hybridized orbitals. Supporting experimental evidence of a two-dimensional (2D) conjugated π -bond system on each quintuple layer of Bi2Se3 is provided using electron energy-loss spectroscopy and electron density mapping through inverse Fourier transform of x-ray diffraction data. Quantum chemistry calculations support the π -bond existence between partially filled 4 pz orbitals of Se via side-to-side orbital overlap positively. The conjugated π -bond system on the surface of each quintuple Bi2Se3 layer is proposed to be similar to that found in graphite (graphene) and responsible for the unique 2D conduction mechanism. The van der Waals (vdW) attractive force between quintuple layers is interpreted to be coming from the antiferroelectrically ordered effective electric dipoles, which are constructed with π -bond trimer pairs on Se layers across the vdW gap of minimized Coulomb repulsion.

  1. Thermoelectric properties of 3D topological insulator: Direct observation of topological surface and its gap opened states

    Science.gov (United States)

    Matsushita, Stephane Yu; Huynh, Khuong Kim; Yoshino, Harukazu; Tu, Ngoc Han; Tanabe, Yoichi; Tanigaki, Katsumi

    2017-10-01

    We report thermoelectric (TE) properties of topological surface Dirac states (TSDS) in three-dimensional topological insulators (3D-TIs) purely isolated from the bulk by employing single-crystal B i2 -xS bxT e3 -yS ey films epitaxially grown in the ultrathin limit. Two intrinsic nontrivial topological surface states, a metallic TSDS (m-TSDS) and a gap-opened semiconducting topological state (g-TSDS), are successfully observed by electrical transport, and important TE parameters [electrical conductivity (σ), thermal conductivity (κ), and thermopower (S )] are accurately determined. Pure m-TSDS gives S =-44 μ V K-1 , which is an order of magnitude higher than those of the conventional metals and the value is enhanced to -212 μ V K-1 for g-TSDS. It is clearly shown that the semiclassical Boltzmann transport equation (SBTE) in the framework of constant relaxation time (τ) most frequently used for conventional analysis cannot be valid in 3D-TIs and strong energy dependent relaxation time τ(E ) beyond the Born approximation is essential for making intrinsic interpretations. Although σ is protected on the m-TSDS, κ is greatly influenced by the disorder on the topological surface, giving a dissimilar effect between topologically protected electronic conduction and phonon transport.

  2. Disorder-driven metal-insulator-transition assisted by interband Coulomb repulsion in a surface transfer doped electron system

    Science.gov (United States)

    Francisco Sánchez-Royo, Juan

    2012-12-01

    The two-dimensional conducting properties of the Si(111) \\sqrt {3} \\times \\sqrt {3} surface doped by the charge surface transfer mechanism have been calculated in the frame of a semiclassical Drude-Boltzmann model considering donor scattering mechanisms. To perform these calculations, the required values of the carrier effective mass were extracted from reported angle-resolved photoemission results. The calculated doping dependence of the surface conductance reproduces experimental results reported and reveals an intricate metallization process driven by disorder and assisted by interband interactions. The system should behave as an insulator even at relatively low doping due to disorder. However, when doping increases, the system achieves to attenuate the inherent localization effects introduced by disorder and to conduct by percolation. The mechanism found by the system to conduct appears to be connected with the increasing of the carrier effective mass observed with doping, which seems to be caused by interband interactions involving the conducting band and deeper ones. This mass enhancement reduces the donor Bohr radius and, consequently, promotes the screening ability of the donor potential by the electron gas.

  3. Molecular-beam epitaxial growth of insulating AlN on surface-controlled 6H-SiC substrate by HCl gas etching

    International Nuclear Information System (INIS)

    Onojima, Norio; Suda, Jun; Matsunami, Hiroyuki

    2002-01-01

    Insulating AlN layers were grown on surface-controlled 6H-SiC subtrates by molecular-beam epitaxy (MBE) using elemental Al and rf plasma-excited nitrogen (N*). HCl gas etching was introduced as an effective pretreatment method of substrate for MBE growth of AlN. 6H-SiC substrates pretreated by HCl gas etching had no surface polishing scratches and an atomically flat surface. In addition, evident ( 3 √x 3 √)R30 deg. surface reconstruction was observed even before thermal cleaning. AlN layers grown on this substrate had no defects related to surface polishing scratches and excellent insulating characteristics

  4. Electron emission and energy loss in grazing collisions of protons with insulator surfaces

    International Nuclear Information System (INIS)

    Gravielle, M. S.; Miraglia, J. E.; Aldazabal, I.; Arnau, A.; Ponce, V. H.; Aumayr, F.; Lederer, S.; Winter, H.

    2007-01-01

    Electron emission from LiF, KCl, and KI crystal surfaces during grazing collisions of swift protons is studied using a first-order distorted-wave formalism. Owing to the localized character of the electronic structure of these surfaces, we propose a model that allows us to describe the process as a sequence of atomic transitions from different target ions. Experimental results are presented for electron emission from LiF and KI and energy loss from KI surfaces. Calculations show reasonable agreement with these experimental data. The role played by the charge of the incident particle is also investigated

  5. Quantum Hall effect on top and bottom surface states of topological insulator (Bi1-xSbx)2Te3 films.

    Science.gov (United States)

    Yoshimi, R; Tsukazaki, A; Kozuka, Y; Falson, J; Takahashi, K S; Checkelsky, J G; Nagaosa, N; Kawasaki, M; Tokura, Y

    2015-04-14

    The three-dimensional topological insulator is a novel state of matter characterized by two-dimensional metallic Dirac states on its surface. To verify the topological nature of the surface states, Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds have been intensively studied. Here, we report the realization of the quantum Hall effect on the surface Dirac states in (Bi1-xSbx)2Te3 films. With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ±1 are resolved. Furthermore, the appearance of a quantum Hall plateau at filling factor zero reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the quantum Hall effect in three-dimensional topological insulator films may pave a way toward topological insulator-based electronics.

  6. Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

    Energy Technology Data Exchange (ETDEWEB)

    Skinner, B.; Chen, T.; Shklovskii, B. I., E-mail: shklovsk@physics.spa.umn.edu [University of Minnesota, Fine Theoretical Physics Institute (United States)

    2013-09-15

    In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states.

  7. Effects of bulk charged impurities on the bulk and surface transport in three-dimensional topological insulators

    International Nuclear Information System (INIS)

    Skinner, B.; Chen, T.; Shklovskii, B. I.

    2013-01-01

    In the three-dimensional topological insulator (TI), the physics of doped semiconductors exists literally side-by-side with the physics of ultrarelativistic Dirac fermions. This unusual pairing creates a novel playground for studying the interplay between disorder and electronic transport. In this mini-review, we focus on the disorder caused by the three-dimensionally distributed charged impurities that are ubiquitous in TIs, and we outline the effects it has on both the bulk and surface transport in TIs. We present self-consistent theories for Coulomb screening both in the bulk and at the surface, discuss the magnitude of the disorder potential in each case, and present results for the conductivity. In the bulk, where the band gap leads to thermally activated transport, we show how disorder leads to a smaller-than-expected activation energy that gives way to variable-range hopping at low temperatures. We confirm this enhanced conductivity with numerical simulations that also allow us to explore different degrees of impurity compensation. For the surface, where the TI has gapless Dirac modes, we present a theory of disorder and screening of deep impurities, and we calculate the corresponding zero-temperature conductivity. We also comment on the growth of the disorder potential in passing from the surface of the TI into the bulk. Finally, we discuss how the presence of a gap at the Dirac point, introduced by some source of time-reversal symmetry breaking, affects the disorder potential at the surface and the mid-gap density of states

  8. Electrostatic force microscopy on oriented graphite surfaces: coexistence of insulating and conducting behaviors.

    Science.gov (United States)

    Lu, Yonghua; Muñoz, M; Steplecaru, C S; Hao, Cheng; Bai, Ming; Garcia, N; Schindler, K; Esquinazi, P

    2006-08-18

    We present measurements of the electric potential fluctuations on the surface of highly oriented pyrolytic graphite using electrostatic force and atomic force microscopy. Micrometric domainlike potential distributions are observed even when the sample is grounded. Such potential distributions are unexpected given the good metallic conductivity of graphite because the surface should be an equipotential. Our results indicate the coexistence of regions with "metalliclike" and "insulatinglike" behaviors showing large potential fluctuations of the order of 0.25 V. In lower quality graphite, this effect is not observed. Experiments are performed in Ar and air atmospheres.

  9. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit; Manchon, Aurelien

    2017-01-01

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  10. Spin-orbit torque in 3D topological insulator-ferromagnet heterostructure: crossover between bulk and surface transport

    KAUST Repository

    Ghosh, Sumit

    2017-11-29

    Current-driven spin-orbit torques are investigated in a heterostructure composed of a ferromagnet deposited on top of a three dimensional topological insulator using the linear response formalism. We develop a tight-binding model of the heterostructure adopting a minimal interfacial hybridization scheme that promotes induced magnetic exchange on the topological surface states, as well as induced Rashba-like spin-orbit coupling in the ferromagnet. Therefore, our model accounts for spin Hall effect from bulk states together with inverse spin galvanic and magnetoelectric effects at the interface on equal footing. By varying the transport energy across the band structure, we uncover a crossover from surface-dominated to bulk-dominated transport regimes. We show that the spin density profile and the nature of the spin-orbit torques differ substantially in both regimes. Our results, which compare favorably with experimental observations, demonstrate that the large damping torque reported recently is more likely attributed to interfacial magnetoelectric effect, while spin Hall torque remains small even in the bulk-dominated regime.

  11. Ultrafast terahertz spectroscopy study of a Kondo insulating thin-film Sm B6 : Evidence for an emergent surface state

    Science.gov (United States)

    Zhang, Jingdi; Yong, Jie; Takeuchi, Ichiro; Greene, Richard L.; Averitt, Richard D.

    2018-04-01

    We utilize terahertz time domain spectroscopy to investigate thin films of the heavy fermion compound Sm B6 , a prototype Kondo insulator. Temperature-dependent terahertz (THz) conductivity measurements reveal a rapid decrease in the Drude weight and carrier scattering rate at ˜T*=20 K , well below the hybridization gap onset temperature (100 K). Moreover, a low-temperature conductivity plateau (below 20 K) suggests the emergence of a surface state with an effective electron mass of 0.1 me . The conductivity dynamics following optical excitation is also measured and interpreted using Rothwarf-Taylor (R-T) phenomenology, yielding a hybridization gap energy of 17 meV. However, R-T modeling of the conductivity dynamics reveals a deviation from the expected thermally excited quasiparticle density at temperatures below 20 K, indicative of another channel opening up in the low-energy electrodynamics. Taken together, these results are consistent with the onset of a surface state well below the crossover temperature (100 K) after long-range coherence of the f -electron Kondo lattice is established.

  12. Magnetization switching of a metallic nanomagnet via current-induced surface spin-polarization of an underlying topological insulator

    International Nuclear Information System (INIS)

    Roy, Urmimala; Dey, Rik; Pramanik, Tanmoy; Ghosh, Bahniman; Register, Leonard F.; Banerjee, Sanjay K.

    2015-01-01

    We consider a thermally stable, metallic nanoscale ferromagnet (FM) subject to spin-polarized current injection and exchange coupling from the spin-helically locked surface states of a topological insulator (TI) to evaluate possible non-volatile memory applications. We consider parallel transport in the TI and the metallic FM, and focus on the efficiency of magnetization switching as a function of transport between the TI and the FM. Transport is modeled as diffusive in the TI beneath the FM, consistent with the mobility in the TI at room temperature, and in the FM, which essentially serves as a constant potential region albeit spin-dependent except in the low conductivity, diffusive limit. Thus, it can be captured by drift-diffusion simulation, which allows for ready interpretation of the results. We calculate switching time and energy consumed per write operation using self-consistent transport, spin-transfer-torque (STT), and magnetization dynamics calculations. Calculated switching energies and times compare favorably to conventional spin-torque memory schemes for substantial interlayer conductivity. Nevertheless, we find that shunting of current from the TI to a metallic nanomagnet can substantially limit efficiency. Exacerbating the problem, STT from the TI effectively increases the TI resistivity. We show that for optimum performance, the sheet resistivity of the FM layer should be comparable to or larger than that of the TI surface layer. Thus, the effective conductivity of the FM layer becomes a critical design consideration for TI-based non-volatile memory

  13. Controllable magnetic doping of the surface state of a topological insulator

    DEFF Research Database (Denmark)

    Schlenk, T.; Bianchi, M.; Koleini, Mohammad

    2013-01-01

    A combined experimental and theoretical study of doping individual Fe atoms into Bi2Se3 is presented. It is shown through a scanning tunneling microscopy study that single Fe atoms initially located at hollow sites on top of the surface (adatoms) can be incorporated into subsurface layers by ther...

  14. On the surface recombination current of metal-insulator semiconductor inversion layer solar cells

    DEFF Research Database (Denmark)

    Nielsen, Otto M.

    1981-01-01

    voltages Voc were found to be lower than for ~ cells. The measured differences in Voc were higher than expected from the dark characteristics which is explained as a difference in the surface recombination current due to a higher interface state density Nss of ~ cells. Journal of Applied Physics...

  15. MeV Mott polarimetry at Jefferson Lab

    International Nuclear Information System (INIS)

    Steigerwald, M.

    2001-01-01

    In the recent past, Mott polarimetry has been employed only at low electron beam energies (≅100 keV). Shortly after J. Sromicki demonstrated the first Mott scattering experiment on lead foils at 14 MeV (MAMI, 1994), a high energy Mott scattering polarimeter was developed at Thomas Jefferson National Accelerator Facility (5 MeV, 1995). An instrumental precision of 0.5% was achieved due to dramatic improvement in eliminating the background signal by means of collimation, shielding, time of flight and coincidence methods. Measurements for gold targets between 0.05 μm and 5 μm for electron energies between 2 and 8 MeV are presented. A model was developed to explain the depolarization effects in the target foils due to double scattering. The instrumental helicity correlated asymmetries were measured to smaller than 0.1%

  16. The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO{sub 3}(0 0 1)

    Energy Technology Data Exchange (ETDEWEB)

    Suwanwong, S. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Program in General Science Teaching, Faculty of Education, Vongchavalitkul University, Nakhon Ratchasima 30000 (Thailand); Eknapakul, T. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Rattanachai, Y. [Department of Applied Physics, Faculty of Sciences and Liberal Arts, Rajamangala University of Technology Isan, Nakhon Ratchasima 30000 (Thailand); Masingboon, C. [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Faculty of Science and Engineering, Kasetsart University, Chalermphrakiat Sakon Nakhon Province Campus, Sakon Nakhon 47000 (Thailand); Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H. [Synchrotron Light Research Institute, Nakhon Ratchasima 30000 (Thailand); King, P.D.C. [SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews, Fife KY16 9SS (United Kingdom); Hodak, S.K. [Department of Physics, Faculty of Science, Chulalongkorn University, Bangkok 10330 (Thailand); Meevasana, W., E-mail: worawat@g.sut.ac.th [School of Physics, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima 30000 (Thailand); Thailand Center of Excellence in Physics, CHE, Bangkok 10400 (Thailand)

    2015-11-15

    Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO{sub 3} is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO{sub 3}(0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO{sub 3} surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

  17. The dynamics of ultraviolet-induced oxygen vacancy at the surface of insulating SrTiO_3(0 0 1)

    International Nuclear Information System (INIS)

    Suwanwong, S.; Eknapakul, T.; Rattanachai, Y.; Masingboon, C.; Rattanasuporn, S.; Phatthanakun, R.; Nakajima, H.; King, P.D.C.; Hodak, S.K.; Meevasana, W.

    2015-01-01

    Highlights: • The dynamics of UV-induced oxygen vacancy is studied from the change of surface resistance. • The formation of 2DEG at the insulating surface of SrTiO_3 is confirmed by ARPES. • The UV-induced change in resistance responds differently to oxygen/gas exposure. • The behavior of resistance recovery suggests an alternative method of low-pressure sensing. - Abstract: The effect of ultra-violet (UV) irradiation on the electronic structure and the surface resistance of an insulating SrTiO_3(0 0 1) crystal is studied in this work. Upon UV irradiation, we show that the two-dimensional electron gas (2DEG) emerges at the insulating SrTiO_3 surface and there is a pronounced change in the surface resistance. By combining the observations of the change in valance band and the resistance change under different environments of gas pressure and gas species, we find that UV-induced oxygen vacancies at the surface plays a major role in the resistance change. The dynamic of the resistance change at different oxygen pressures also suggests an alternative method of low-pressure sensing.

  18. Mott-Schottky analysis of thin ZnO films

    International Nuclear Information System (INIS)

    Windisch, Charles F. Jr.; Exarhos, Gregory J.

    2000-01-01

    Thin ZnO films, both native and doped with secondary metal ions, have been prepared by sputter deposition and also by casting from solutions containing a range of precursor salts. The conductivity and infrared reflectivity of these films are subsequently enhanced chemically following treatment in H 2 gas at 400 degree sign C or by cathodic electrochemical treatment in a neutral (pH=7) phosphate buffer solution. While Hall-type measurements usually are used to evaluate the electrical properties of such films, the present study investigated whether a conventional Mott-Schottky analysis could be used to monitor the change in concentration of free carriers in these films before and after chemical and electrochemical reduction. The Mott-Schottky approach would be particularly appropriate for electrochemically modified films since the measurements could be made in the same electrolyte used for the post-deposition electrochemical processing. Results of studies on sputtered pure ZnO films in ferricyanide solution were promising. Mott-Schottky plots were linear and gave free carrier concentrations typical for undoped semiconductors. Film thicknesses estimated from the Mott-Schottky data were also reasonably close to thicknesses calculated from reflectance measurements. Studies on solution-deposited films were less successful. Mott-Schottky plots were nonlinear, apparently due to film porosity. A combination of dc polarization and atomic force microscopy measurements confirmed this conclusion. The results suggest that Mott-Schottky analysis would be suitable for characterizing solution-deposited ZnO films only after extensive modeling was performed to incorporate the effects of film porosity on the characteristics of the space-charge region of the semiconductor. (c) 2000 American Vacuum Society

  19. Channeling effect in electronic spectra produced by grazing impact of fast protons on insulator surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Archubi, C D; Gravielle, M S, E-mail: archubi@iafe.uba.a, E-mail: msilvia@iafe.uba.a [Instituto de Astronomia y Fisica del Espacio, Casilla de Correo 67, Sucursal 28, 1428, Buenos Aires (Argentina)

    2009-11-01

    Electron emission due to grazing scattering of fast protons from LiF and KCl surfaces is studied under axial incidence conditions. The differential emission probability is calculated within a distorted-wave formalism, taking into account axial channeled trajectories. For different emission angles, electronic spectra for proton incidence along the two principal crystal axes ([100] and [110]) are compared with those corresponding to an impact velocity in a random direction, finding effects associated with the channeling conditions.

  20. Mott scattering as a probe of long range QCD

    International Nuclear Information System (INIS)

    Bertulani, C.A.; Balantekin, A.B.

    1993-12-01

    We investigate the possibility of using the Mott scattering between identical nuclei to assess the existence of long range QCD, e.g., a color Van der Waals interaction, as suggested recently. Among other effects which were not considered before, the tail of the nuclear potential, emission of radiation by Bremsstrahlung, atomic screening, emission of delta-electrons, and the quasi-molecule binding are included in our calculations. We show that the sum of these effects can explain the observed shift in the Mott oscillations in a recent experiment. (orig.)

  1. Experimental study on magnetically insulated transmission line electrode surface evolution process under MA/cm current density

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, PengFei; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China); State Key Laboratory of Intense Pulse Radiation of Simulation and Effect, Northwest Institute of Nuclear Technology, Xi' an 710024 (China); Hu, Yang; Yang, HaiLiang; Sun, Jiang; Wang, Liangping; Cong, Peitian [State Key Laboratory of Intense Pulse Radiation of Simulation and Effect, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-03-15

    The design of high-current density magnetically insulated transmission line (MITL) is a difficult problem of current large-scale Z-pinch device. In particular, a thorough understanding of the MITL electrode surface evolution process under high current density is lacking. On the “QiangGuang-I” accelerator, the load area possesses a low inductance short-circuit structure with a diameter of 2.85 mm at the cathode, and three reflux columns with a diameter of 3 mm and uniformly distributed circumference at the anode. The length of the high density MITL area is 20 mm. A laser interferometer is used to assess and analyze the state of the MITL cathode and anode gap, and their evolution process under high current density. Experimental results indicate that evident current loss is not observed in the current density area at pulse leading edge, and peak when the surface current density reaches MA/cm. Analysis on electrode surface working conditions indicates that when the current leading edge is at 71.5% of the peak, the total evaporation of MITL cathode structure can be realized by energy deposition caused by ohmic heating. The electrode state changes, and diffusion conditions are reflected in the laser interferometer image. The MITL cathode area mainly exists in metal vapor form. The metal vapor density in the cathode central region is higher than the upper limit of laser penetration density (∼4 × 10{sup 21}/cm{sup 3}), with an expansion velocity of ∼0.96 km/s. The metal vapor density in the electrode outer area may lead to evident distortion of fringes, and its expansion velocity is faster than that in the center area (1.53 km/s).

  2. Extracting and focusing of surface plasmon polaritons inside finite asymmetric metal/insulator/metal structure at apex of optical fiber by subwavelength holes

    Science.gov (United States)

    Oshikane, Yasushi; Murai, Kensuke; Nakano, Motohiro

    2013-09-01

    We have been studied a finite asymmetric metal-insulator-metal (MIM) structure on glass plate for near-future visible light communication (VLC) system with white LED illuminations in the living space (DOI: 10.1117/12.929201). The metal layers are vacuum-evaporated thin silver (Ag) films (around 50 nm and 200 nm, respectively), and the insulator layer (around 150 nm) is composed of magnesium fluoride (MgF2). A characteristic narrow band filtering of the MIM structure at visible region might cause a confinement of intense surface plasmon polaritons (SPPs) at specific monochromatic frequency inside a subwavelength insulator layer of the MIM structure. Central wavelength and depth of such absorption dip in flat spectral reflectance curve is controlled by changing thicknesses of both insulator and thinner metal layers. On the other hand, we have proposed a twin-hole pass-through wave guide for SPPs in thick Ag film (DOI: 10.1117/12.863587). At that time, the twin-hole converted a incoming plane light wave into a pair of channel plasmon polaritons (CPPs), and united them at rear surface of the Ag film. This research is having an eye to extract, guide, and focus the SPPs through a thicker metal layer of the MIM with FIBed subwavelength pass-through holes. The expected outcome is a creation of noble, monochromatic, and tunable fiber probe for scanning near-field optical microscopes (SNOMs) with intense white light sources. Basic experimental and FEM simulation results will be presented.

  3. Solid-gate control of insulator to 2D metal transition at SrTiO3 surface

    Science.gov (United States)

    Schulman, Alejandro; Stoliar, Pablo; Kitoh, Ai; Rozenberg, Marcelo; Inoue, Isao H.

    As miniaturization of the semiconductor transistor approaches its limit, semiconductor industries are facing a major challenge to extend information processing beyond what can be attainable by conventional Si-based transistors. Innovative combinations of new materials and new processing platforms are desired. Recent discovery of the 2D electron gas (2DEG) at the surface of SrTiO3 (STO) and its electrostatic control, have carried it to the top of promising materials to be utilized in innovative devices. We report an electrostatic control of the carrier density of the 2DEG formed at the channel of bilayer-gated STO field-effect devices. By applying a gate electric field at room temperature, its highly insulating channel exhibits a transition to metallic one. This transition is accompanied by non-monotonic voltage-gain transfer characteristic with both negative and positive slope regions and unexpected enhancement of the sheet carrier density. We will introduce a numerical model to rationalize the observed features in terms of the established physics of field-effect transistors and the physics of percolation. Furthermore, we have found a clear signature of a Kondo effect that arises due to the interaction between the dilute 2DEG and localized Ti 3d orbitals originated by oxygen vacancies near the channel. On leave from CIC nanoGUNE, Spain.

  4. Characteristics of epoxy resin/SiO2 nanocomposite insulation: effects of plasma surface treatment on the nanoparticles.

    Science.gov (United States)

    Yan, Wei; Phung, B T; Han, Zhao Jun; Ostrikov, Kostya

    2013-05-01

    The present study compares the effects of two different material processing techniques on modifying hydrophilic SiO2 nanoparticles. In one method, the nanoparticles undergo plasma treatment by using a custom-developed atmospheric-pressure non-equilibrium plasma reactor. With the other method, they undergo chemical treatment which grafts silane groups onto their surface and turns them into hydrophobic. The treated nanoparticles are then used to synthesize epoxy resin-based nanocomposites for electrical insulation applications. Their characteristics are investigated and compared with the pure epoxy resin and nanocomposite fabricated with unmodified nanofillers counterparts. The dispersion features of the nanoparticles in the epoxy resin matrix are examined through scanning electron microscopy (SEM) images. All samples show evidence that the agglomerations are smaller than 30 nm in their diameters. This indicates good dispersion uniformity. The Weibull plot of breakdown strength and the recorded partial discharge (PD) events of the epoxy resin/plasma-treated hydrophilic SiO2 nanocomposite (ER/PTI) suggest that the plasma-treated specimen yields higher breakdown strength and lower PD magnitude as compared to the untreated ones. In contrast, surprisingly, lower breakdown strength is found for the nanocomposite made by the chemically treated hydrophobic particles, whereas the PD magnitude and PD numbers remain at a similar level as the plasma-treated ones.

  5. Transformation of the superconducting gap to an insulating pseudogap at a critical hole density in the cuprates

    Science.gov (United States)

    Liu, Ye-Hua; Wang, Wan-Sheng; Wang, Qiang-Hua; Zhang, Fu-Chun; Rice, T. M.

    2017-07-01

    We apply the recent wave-packet formalism developed by Ossadnik to describe the origin of the short-range ordered pseudogap state as the hole doping is lowered through a critical density in cuprates. We argue that the energy gain that drives this precursor state to Mott localization, follows from maximizing umklapp scattering near the Fermi energy. To this end, we show how energy gaps driven by umklapp scattering can open on an appropriately chosen surface, as proposed earlier by Yang, Rice, and Zhang. The key feature is that the pairing instability includes umklapp scattering, leading to an energy gap not only in the single-particle spectrum but also in the pair spectrum. As a result the superconducting gap at overdoping is turned into an insulating pseudogap in the antinodal parts of the Fermi surface.

  6. Systematic study of transport via surface and bulk states in Bi2Te3 topological insulator

    Science.gov (United States)

    de Castro, S.; Peres, M. L.; Chitta, V. A.; Gratens, X.; Soares, D. A. W.; Fornari, C. I.; Rappl, P. H. O.; Abramof, E.; Oliveira, N. F., Jr.

    2016-07-01

    We performed magnetoresistance measurements on Bi2Te3 thin film in the temperature range of T = 1.2-4.0 K and for magnetic fields up to 2 T. The curves exhibited anomalous behavior for temperatures below 4.0 K. Different temperature intervals revealed electrical transport through different conductive channels with clear signatures of weak antilocalization. The magnetoresistance curves were explained using the Hikami-Larkin-Nagaoka model and the 2D Dirac modified model. The comparison between the parameters obtained from the two models revealed the transport via topological surface states and bulk states. In addition, a superconductive like transition is observed for the lowest temperatures and we suggest that this effect can be originated from the misfit dislocations caused by strain, giving rise to a superconductive channel between the interface of the film and the substrate.

  7. Mott transition in the Hubbard model

    International Nuclear Information System (INIS)

    Shastry, B.S.

    1992-01-01

    In this article, the author discuss W. Kohn's criterion for a metal insulator transition, within the framework of a one-band Hubbard model. This and related ideas are applied to 1-dimensional Hubbard systems, and some interesting miscellaneous results discussed. The Jordan-Wigner transformation converting the two species of fermions to two species of hardcore bosons is performed in detail, and the extra phases arising from odd-even effects are explicitly derived. Bosons are shown to prefer zero flux (i.e., diamagnetism) and the corresponding happy fluxes: for the fermions identified. A curios result following from the interplay between orbital diamagnetism and spin polarization is highlighted. A spin-statistics like theorem, showing that the anticommutation relations between fermions of opposite spin are crucial to obtain the SU(2) invariance is pointed out

  8. Ablation, surface activation, and electroless metallization of insulating materials by pulsed excimer laser irradiation

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Godbole, M.J.; Pedraza, A.J.

    1993-01-01

    Pulsed-laser irradiation of wide bandgap ceramic substrates, using photons with sub-bandgap energies, activates the ceramic surface for subsequent electroless copper deposition. The copper deposit is confined within the irradiated region when the substrate is subsequently immersed in an electroless copper bath. However, a high laser fluence (typically several j/cm 2 ) and repeated laser shots are needed to obtain uniform copper coverage by this direct-irradiation process. In contrast, by first applying an evaporated SiO x thin film (with x ∼1), laser ablation at quite low energy density (∼0.5 J/cm 2 ) results in re-deposition on the ceramic substrate of material that is catalytic for subsequent electroless copper deposition. Experiments indicate that the re-deposited material is on silicon, on which copper nucleates. Using an SiO x film on a laser-transparent substrate, quite fine (∼12 μm) copper lines can be formed at the boundary of the region that is laser-etched in SiO x . Using SiO x with an absorbing (polycrystalline) ceramic substrate, more-or-less uniform activation and subsequent copper deposition are obtained. In the later case, interactions with the ceramic substrate also may be important for uniform deposition

  9. Bulk and surface electron transport in topological insulator candidate YbB{sub 6-δ}

    Energy Technology Data Exchange (ETDEWEB)

    Glushkov, Vladimir V.; Demishev, Sergey V.; Sluchanko, Nikolay E. [Prokhorov General Physics Institute of RAS, Vavilov str. 38, 119991, Moscow (Russian Federation); Moscow Institute of Physics and Technology, Institutskii per. 9, 141700, Dolgoprudny, Moscow Region (Russian Federation); Bozhko, Alexey D.; Bogach, Alexey V.; Semeno, Alexey V.; Voronov, Valeriy V. [Prokhorov General Physics Institute of RAS, Vavilov str. 38, 119991, Moscow (Russian Federation); Dukhnenko, Anatoliy V.; Filipov, Volodimir B.; Shitsevalova, Natalya Yu. [Frantsevich Institute for Problems of Materials Science NAS, Krzhyzhanovsky str. 3, 03680, Kiev (Ukraine); Kondrin, Mikhail V. [Vereshchagin Institute of High Pressure Physics of RAS, 142190, Troitsk, Moscow (Russian Federation); Kuznetsov, Alexey V.; Sannikov, Ilia I. [National Research Nuclear University ' ' MEPhI' ' , Kashirskoe Shosse 31, 115409, Moscow (Russian Federation)

    2016-04-15

    We report the study of transport and magnetic properties of the YbB{sub 6-δ}single crystals grown by inductive zone melting. A strong disparity in the low temperature resistivity, Seebeck and Hall coefficients is established for the samples with the different level of boron deficiency. The effective parameters of the charge transport in YbB{sub 6-δ} are shown to depend on the concentration of intrinsic defects, which is estimated to range from 0.09% to 0.6%. The pronounced variation of Hall mobility μ{sub H} found for bulk holes is induced by the decrease of transport relaxation time from τ ∼ 7.7 fs for YbB{sub 5.994} to τ ∼ 2.2 fs for YbB{sub 5.96}. An extra contribution to conductivity from electrons with μ{sub H}∼ -1000 cm{sup 2} V{sup -1} s{sup -1} and the very low concentration n /n{sub Yb}∼ 10{sup -6} discovered below 20 K for all the single crystals under investigation is suggested to arise from the surface electron states appeared in the inversion layer due to the band bending. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Thermal insulation

    International Nuclear Information System (INIS)

    Aspden, G.J.; Howard, R.S.

    1988-01-01

    The patent concerns high temperature thermal insulation of large vessels, such as the primary vessel of a liquid metal cooled nuclear reactor. The thermal insulation consists of multilayered thermal insulation modules, and each module comprises a number of metal sheet layers sandwiched between a back and front plate. The layers are linked together by straps and clips to control the thickness of the module. (U.K.)

  11. Contact spectroscopy on S/TI/N devices: Induced pairing on the surface of a topological insulator

    Science.gov (United States)

    Stehno, Martin P.; Ngabonziza, Prosper; Snelder, Marieke; Myoren, Hiroaki; Pan, Yu; de Visser, Anne; Huang, Y.; Golden, Mark S.; Brinkman, Alexander

    Translating concepts of topological quantum computation into applications requires fine-tuning of parameters in the model Hamiltonians of candidate systems. Such level of control has proven difficult to achieve in devices where superconductors are used to induce pairing in topological insulator (TI) materials. While local probe experiments have indicated features of p-wave superconducting correlations in TIs (as suggested by theory), results on extended devices often remain ambiguous. We present contact spectroscopy data on superconductor/topological insulator/normal metal devices with bulk-insulating TI material and compare these with bulk conducting samples. We discuss the magnitude of the induced gap and unusual features in the conductance traces of the bulk-insulating samples that may suggest the presence of p-wave type correlations in the TI. This work is financially supported by the Dutch Foundation for Fundamental Research on Matter (FOM), the Netherlands Organization for Scientific Research (NWO), and by the European Research Council (ERC).

  12. Cellulose Insulation

    Science.gov (United States)

    1980-01-01

    Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

  13. Experimental studies of ions and atoms interaction with insulating surface; Etude experimentale de l'interaction rasante d'atomes et d'ions sur des surfaces isolantes

    Energy Technology Data Exchange (ETDEWEB)

    Villette, J

    2000-10-15

    Grazing collisions (<3 deg.) of keV ions and atoms: H{sup +}, Ne{sup +}, Ne{sup 0}, Na{sup +} on LiF (001) single crystal, an ionic insulator, are investigated by a time of flight technique. The incident beam is chopped and the scattered particles are collected on a position sensitive detector providing differential cross section while the time of flight gives the energy loss. Deflection plates allow the charge state analysis. Secondary electrons are detected in coincidence allowing direct measurements of electron emission yield, angular and energetic distribution through time of flight measurements. The target electronic structure characterized by a large band gap, governs the collisional processes: charge exchange, electronic excitations and electron emission. In particular, these studies show that the population of local target excitations surface excitons is the major contribution to the kinetic energy transfer (stopping power). Auger neutralization of Ne{sup +} and He{sup +} ions reveals the population of quasi-molecular excitons, an exciton bound on two holes. Referenced in the literature as trion. A direct energy balance determines the binding energy associated with these excited states of the surface. Besides these electronic energy loss processes, two nuclear energy loss mechanisms are characterized. These processes imply momentum transfer to individual target atoms during close binary collisions or, if the projectile is charged, to collective mode of optical phonons induced by the projectile coulomb field. The effect of the temperature on the scattering profile, the contribution of topological surface defects to the energy loss profile and to skipping motion on the surface are analyzed in view of classical trajectory simulations. (author)

  14. Photoinduced Coherent Spin Fluctuation in Primary Dynamics of Insulator to Metal Transition in Perovskite Cobalt Oxide

    Directory of Open Access Journals (Sweden)

    Arima T.

    2013-03-01

    Full Text Available Coherent spin fluctuation was detected in the photoinduced Mott insulator-metal transition in perovskite cobalt oxide by using 3 optical-cycle infrared pulse. Such coherent spin fluctuation is driven by the perovskite distortion changing orbital gap.

  15. Thermal insulation

    International Nuclear Information System (INIS)

    Pinsky, G.P.

    1977-01-01

    Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

  16. Deposition of SiC x H y O z thin film on epoxy resin by nanosecond pulsed APPJ for improving the surface insulating performance

    Science.gov (United States)

    Qing, XIE; Haofan, LIN; Shuai, ZHANG; Ruixue, WANG; Fei, KONG; Tao, SHAO

    2018-02-01

    Non-thermal plasma surface modification for epoxy resin (EP) to improve the insulation properties has wide application prospects in gas insulated switchgear and gas insulated transmission line. In this paper, a pulsed Ar dual dielectrics atmospheric-pressure plasma jet (APPJ) was used for SiC x H y O z thin film deposition on EP samples. The film deposition was optimized by varying the treatment time while other parameters were kept at constants (treatment distance: 10 mm, precursor flow rate: 0.6 l min-1, maximum instantaneous power: 3.08 kW and single pulse energy: 0.18 mJ). It was found that the maximum value of flashover voltages for negative and positive voltage were improved by 18% and 13% when the deposition time was 3 min, respectively. The flashover voltage reduced as treatment time increased. Moreover, all the surface conductivity, surface charge dissipation rate and surface trap level distribution reached an optimal value when thin film deposition time was 3 min. Other measurements, such as atomic force microscopy and scanning electron microscope for EP surface morphology, Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy for EP surface compositions, optical emission spectra for APPJ deposition process were carried out to better understand the deposition processes and mechanisms. The results indicated that the original organic groups (C-H, C-C, C=O, C=C) were gradually replaced by the Si containing inorganic groups (Si-O-Si and Si-OH). The reduction of C=O in ester group and C=C in p-substituted benzene of the EP samples might be responsible for shallowing the trap level and then enhancing the flashover voltage. However, when the plasma treatment time was longer than 3 min, the significant increase of the surface roughness might increase the trap level depth and then deteriorate the flashover performance.

  17. Aharonov–Bohm interference in topological insulator nanoribbons

    KAUST Repository

    Peng, Hailin; Lai, Keji; Kong, Desheng; Meister, Stefan; Chen, Yulin; Qi, Xiao-Liang; Zhang, Shou-Cheng; Shen, Zhi-Xun; Cui, Yi

    2009-01-01

    Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport

  18. Pertinence et limitations de la loi de Mott dans les isolants désordonnés

    Science.gov (United States)

    Ladieu, François; Sanquer, Marc

    Twenty five years ago, Mott's law was established in order to describe electrical transport in disordered insulators at low temperature. In this review, we briefly summarize the different theoretical steps involved in the rigourous derivation of Mott's law. We stress upon the fact that Mott's law gives the mean conductance of an ensemble of macroscopic samples as long as electron-electron interactions remain negligible. We then study what happens when at least one of the key assumptions of Mott's law no longer holds. We first focus on systems whose size — at least in one dimension — is not macroscopic: the optimization involved in Mott's law is no longer relevant for the measured conductance. Eventually, we try to gather different works dealing with electron-electron interactions. It is now established that interactions generally produce a stronger divergence for the electrical resistance than the one predicted by Mott's law at the lowest temperatures. But the exact shape of this divergence, as well as its interpretation, remain debated. We try to make a link between Efros and Shklovskii 's work and their famous "Coulomb gap" and a more recent work about granular media. In this latter work, the size of the grains is the key parameter for the shape of the divergence of the resistance at low temperature. We suggest this could indicate a way for a model accounting for the different shapes of divergence of the electrical resistance at the lowest temperatures. Furthermore this framework of granular media allows us to deal with non linear regime: we explain the main differences between the predictions of the hot electrons model and the ones recently derived for a d -dimensional network of grains. Il y a déjà un quart de siècle que la loi de Mott a été établie afin de décrire le transport dans les milieux isolants désordonnés à basse température. Dans cet article de revue, nous rappelons brièvement les diverses étapes théoriques nécessaires à l

  19. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bazin, Alexandre; Monnier, Paul; Beaudoin, Grégoire; Sagnes, Isabelle; Raj, Rama [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Lenglé, Kevin; Gay, Mathilde; Bramerie, Laurent [Université Européenne de Bretagne (UEB), 5 Boulevard Laënnec, 35000 Rennes (France); CNRS-Foton Laboratory (UMR 6082), Enssat, BP 80518, 22305 Lannion Cedex (France); Braive, Rémy; Raineri, Fabrice, E-mail: fabrice.raineri@lpn.cnrs.fr [Laboratoire de Photonique et de Nanostructures (CNRS UPR20), Route de Nozay, Marcoussis 91460 (France); Université Paris Diderot, Sorbonne Paris Cité, 75207 Paris Cedex 13 (France)

    2014-01-06

    Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

  20. Thermal math model analysis of FRSI test article subjected to cold soak and entry environments. [Flexible Reuseable Surface Insulation in Space Shuttle Orbiter

    Science.gov (United States)

    Gallegos, J. J.

    1978-01-01

    A multi-objective test program was conducted at the NASA/JSC Radiant Heat Test Facility in which an aluminum skin/stringer test panel insulated with FRSI (Flexible Reusable Surface Insulation) was subjected to 24 simulated Space Shuttle Orbiter ascent/entry heating cycles with a cold soak in between in the 10th and 20th cycles. A two-dimensional thermal math model was developed and utilized to predict the thermal performance of the FRSI. Results are presented which indicate that the modeling techniques and property values have been proven adequate in predicting peak structure temperatures and entry thermal responses from both an ambient and cold soak condition of an FRSI covered aluminum structure.

  1. Mott mechanism and the hadronic to quark matter phase transition

    International Nuclear Information System (INIS)

    Blaschke, D.; Reinholz, F.

    1984-01-01

    A unified description of both the hadronic and quark matter can be found using the technique of thermodynamic Green functions. The destruction of bound states (quark deconfinement) is related microscopically to the Mott mechanism which leads to a different behaviour of free particle energies and bound state energies if the particle density is increasing. A simple model calculation is performed to obtain a rough estimate for the critical temperature of the hadronic-quark matter phase transition

  2. Wannier-Mott Excitons in Nanoscale Molecular Ices

    Science.gov (United States)

    Chen, Y.-J.; Muñoz Caro, G. M.; Aparicio, S.; Jiménez-Escobar, A.; Lasne, J.; Rosu-Finsen, A.; McCoustra, M. R. S.; Cassidy, A. M.; Field, D.

    2017-10-01

    The absorption of light to create Wannier-Mott excitons is a fundamental feature dictating the optical and photovoltaic properties of low band gap, high permittivity semiconductors. Such excitons, with an electron-hole separation an order of magnitude greater than lattice dimensions, are largely limited to these semiconductors but here we find evidence of Wannier-Mott exciton formation in solid carbon monoxide (CO) with a band gap of >8 eV and a low electrical permittivity. This is established through the observation that a change of a few degrees K in deposition temperature can shift the electronic absorption spectra of solid CO by several hundred wave numbers, coupled with the recent discovery that deposition of CO leads to the spontaneous formation of electric fields within the film. These so-called spontelectric fields, here approaching 4 ×107 V m-1 , are strongly temperature dependent. We find that a simple electrostatic model reproduces the observed temperature dependent spectral shifts based on the Stark effect on a hole and electron residing several nm apart, identifying the presence of Wannier-Mott excitons. The spontelectric effect in CO simultaneously explains the long-standing enigma of the sensitivity of vacuum ultraviolet spectra to the deposition temperature.

  3. DWPF Stage 2: precipitation test program at Mott

    International Nuclear Information System (INIS)

    Schmitz, M.A.

    1981-01-01

    This memorandum covers the results of the test program conducted at Mott Metallurgical to determine cross-flow filter performance on potassium/cesium tetraphenylborate (K/Cs TPB)-sodium titanate slurries. The test program was designed to provide essential basic operating data to supplement the 1000-gallon cold process tests planned at TNX and the shielded cell tests with actual waste supernate planned by Chemical Technology. The specific Mott Metallurgical test objectives are outlined in DPST-81-722. During the Mott Metallurgical test program an average filtrate flow rate of approximately 0.05 gpm/ft 2 was repeatedly demonstrated over an 8-hr run with 0.5 micron filter elements. Initial Fe/Al sludge concentrations up to 150 ppM did not affect filter performance. Rheologies of the K/Cs TPB-sodium titanate slurries up to 13% by weight, the maximum concentration achieved, are summarized. Several recommendations are made to act as a guide for optimal filter performance

  4. Transport of electric charge in insulators

    International Nuclear Information System (INIS)

    Lopez C, E.

    1979-01-01

    In this work a review is made of important concepts in the study of the transport of electric charge in insulators. These concepts are: electrical contacts, transport regimes as viewed in the I-V characteristics, and photoinjection processes by internal photemission of holes or electrons from metals or semiconductors into insulators or by a virtual electrode using strongly absorbed light. Experimental results of photoinjection of holes and electrons into sulfur single crystals are analyzed using these concepts. The observation of the Mott-Gurney transition is reported for the first time. This is the transition between the region of space charge limited currents (SCLC) and the region of saturation of the current as a function of the applied voltage. A modified Mott-Gurney theoretical model is presented that is able to explain the whole I-V characteristic for uv and the internal photoemission of hopes and uv photoinjection of electrons. For the case of internal photoemission of electrons the conventional space charge limited current theory for an exponential distribution of traps is able to explain the experimental data. It is found that the crystals are of high purity since the total density of traps, as calculated from their exponential distribution, is Nsub(t) equals 1.8 X 10 14 cm -3 . (author)

  5. Insulation structure of thermonuclear device

    International Nuclear Information System (INIS)

    Suzuki, Takayuki; Usami, Saburo; Tsukamoto, Hideo; Kikuchi, Mitsuru

    1998-01-01

    The present invention provides an insulating structure of a thermonuclear device, in which insulation materials between toroidal coils are not broken even if superconductive toroidal coils are used. Namely, a tokamak type thermonuclear device of an insulating structure type comprises superconductive toroidal coils for confining plasmas arranged in a circular shape directing the center each at a predetermined angle, and the toroidal coils are insulated from each other. The insulation materials are formed by using a biaxially oriented fiber reinforced plastics. The contact surface of the toroidal coils and the insulating materials are arranged so that they are contact at a woven surface of the fiber reinforced plastics. Either or both of the contact surfaces of the fiber reinforced plastics and the toroidal coils are coated with a high molecular compound having a low friction coefficient. With such a constitution, since the interlayer shearing strength of the biaxially oriented fiber reinforced plastics is about 1/10 of the compression strength, the shearing stress exerted on the insulation material is reduced. Since a static friction coefficient on the contact surface is reduced to provide a structure causing slipping, shearing stress does not exceeds a predetermined limit. As a result, breakage of the insulation materials between the toroidal coils can be prevented. (I.S.)

  6. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae; Cha, Judy J.; Kong, Desheng; Cui, Yi

    2012-01-01

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  7. Ultra-low carrier concentration and surface-dominant transport in antimony-doped Bi2Se3 topological insulator nanoribbons

    KAUST Repository

    Hong, Seung Sae

    2012-03-27

    A topological insulator is the state of quantum matter possessing gapless spin-locking surface states across the bulk band gap, which has created new opportunities from novel electronics to energy conversion. However, the large concentration of bulk residual carriers has been a major challenge for revealing the property of the topological surface state by electron transport measurements. Here we report the surface-state-dominant transport in antimony-doped, zinc oxide-encapsulated Bi2Se3 nanoribbons with suppressed bulk electron concentration. In the nanoribbon with sub-10-nm thickness protected by a zinc oxide layer, we position the Fermi levels of the top and bottom surfaces near the Dirac point by electrostatic gating, achieving extremely low two-dimensional carrier concentration of 2×10 11cm-2. The zinc oxide-capped, antimony-doped Bi 2Se3 nanostructures provide an attractive materials platform to study fundamental physics in topological insulators, as well as future applications. © 2012 Macmillan Publishers Limited. All rights reserved.

  8. Surface barrier analysis of semi-insulating and n{sup +}-type GaAs(0 0 1) following passivation with n-alkanethiol SAMs

    Energy Technology Data Exchange (ETDEWEB)

    Marshall, Gregory M. [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada); Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Bensebaa, Farid [Institute for Chemical Process and Environmental Technology, National Research Council of Canada, Ottawa, Ontario, K1A 0R6 (Canada); Dubowski, Jan J., E-mail: jan.j.dubowski@usherbrooke.ca [Laboratory for Quantum Semiconductors and Photon-Based BioNanotechnology, Department of Electrical and Computer Engineering, Universite de Sherbrooke, Sherbrooke, Quebec, J1K 2R1 (Canada)

    2011-02-15

    The surface Fermi level of semi-insulating and n{sup +}-type GaAs(0 0 1) was determined before and after passivation with n-alkanethiol self-assembled monolayers (SAMs) by X-ray photoelectron spectroscopy. Fermi level positioning was achieved using Au calibration pads integrated directly onto the GaAs surface, prior to SAM deposition, in order to provide a surface equipotential binding energy reference. Fermi level pinning within 50 meV and surface barrier characteristics according to the Advanced Unified Defect Model were observed. Our results demonstrate the effectiveness of the Au integration technique for the determination of band-edge referenced Fermi level positions and are relevant to an understanding of emerging technologies based on the molecular-semiconductor junction.

  9. Localization of holes near charged defects in orbitally degenerate, doped Mott insulators

    Science.gov (United States)

    Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

    2018-05-01

    We study the role of charged defects, disorder and electron-electron (e-e) interactions in a multiband model for t2g electrons in vanadium perovskites R1-xCaxVO3 (R = La,…,Y). By means of unrestricted Hartree-Fock calculations, we find that the atomic multiplet structure persists up to 50% Ca doping. Using the inverse participation number, we explore the degree of localization and its doping dependence for all electronic states. The observation of strongly localized wave functions is consistent with our conjecture that doped holes form spin-orbital polarons that are strongly bound to the charged Ca2+ defects. Interestingly, the long-range e-e interactions lead to a discontinuity in the wave function size across the chemical potential, where the electron removal states are more localized than the addition states.

  10. Effects of inhomogeneity on the spectrum of the Mott-insulator state

    International Nuclear Information System (INIS)

    Pupillo, G.; Tiesinga, E.; Williams, C.J.

    2003-01-01

    We investigate the existence of quantum quasi-phase-transitions for an ensemble of ultracold bosons in a one-dimensional optical lattice performing exact diagonalizations of the Bose-Hubbard Hamiltonian. When an external parabolic potential is added to the system quasi-phase-transitions are induced by the competition of on-site mean-field energy, hopping energy, and energy offset among lattice sites due to the external potential and lead to the coexistence of regions of particle localization and delocalization in the lattice. We clarify the microscopic mechanisms responsible for these quasi-phase-transitions as a function of the depth of the external potential when the on-site mean-field energy is large compared to the hopping energy. In particular, we show that a model Hamiltonian involving a few Fock states can describe the behavior of energy gap, mean particle numbers per site, and number fluctuations per site almost quantitatively. The role of symmetry on the gap as a function of the depth of the external trapping potential is elucidated. We discuss possible experimental signatures of quasi-phase-transitions studying the single-particle density matrix and explain microscopically the occurrence of local maxima in the momentum distribution. The role of a thermal population of the excited states on the momentum distribution is discussed

  11. Tunable Quantum Spin Liquidity in Mo3O13 Cluster Mott Insulators

    Science.gov (United States)

    Akbari-Sharbaf, Arash; Ziat, Djamel; Verrier, Aime; Quilliam, Jeffrey A.; Sinclair, Ryan; Zhou, Haidong D.; Sun, Xuefeng F.

    A study of a tunable quantum spin liquid (QSL) phase in the compound Li2In1- x ScxMo3O8 (x = 0.2, 0.4, 0.6, 0.8, 1) will be presented. Crystal structure of these compounds can be viewed as Mo ions arranged on an asymmetric Kagome lattice (KL), with two different Mo-Mo bond lengths, separated by nonmagnetic layers composed of Li, In, and Sc ions. Using X-ray diffraction spectroscopy, muon spin relaxation spectroscopy, bulk magnetic susceptibility and specific heat measurements we show that by changing the composition of the nonmagnetic layers we can drive the system from an ordered antiferromagnetic state to a quantum spin liquid state. The mechanism responsible for the tunability of the magnetic phase in this class of materials may be associated with the degree of asymmetry of the KL controlled by the composition of the nonmagnetic layers. For high degree of asymmetry the constraint on the electronic distribution leads to a configuration of Mo3O8 clusters with net spin-1/2 per cluster arrange on a triangular lattice and long range antiferromagnetic order. For low degree of asymmetry the electronic distribution leads to a magnetic phase with QSL character. We acknowledge support from NSERC and CFREF.

  12. Hundness versus Mottness in a three-band Hund model with relevance for iron-pnictides

    Energy Technology Data Exchange (ETDEWEB)

    Stadler, Katharina M.; Delft, Jan von; Weichselbaum, Andreas [Ludwig Maximilians University, Munich (Germany); Yin, Zhiping; Kotliar, Gabriel [Rutgers University, New Jersey (United States)

    2016-07-01

    The recently discovered iron pnictide superconductors (as well as chalcogenides, ruthenates, and other 4d transition metal oxides) show puzzling anomalous properties, like a coherence-incoherence crossover, also in the normal state. While there is consensus about strong correlation effects playing a key role in these materials, their precise origin (Coulomb repulsion or Hund's rule coupling between electrons of different orbitals) has been under debate as one of the major open questions in the field many years. In a recent detailed study of the Hund metal problem the coherence-incoherence crossover was shown to be connected to spin-orbital separation and to be clearly driven by Hund's rule coupling. In order to better understand the differences between Mott insulators and Hund metals we explore the phase diagram for a three-band model with Coulomb repulsion and Hund's rule coupling on a Bethe lattice at 1/3 filling using the numerical renormalization group to obtain a numerically exact dynamical mean-field theory solution.

  13. Thermal insulation

    International Nuclear Information System (INIS)

    Durston, J.G.; Birch, W.; Facer, R.I.; Stuart, R.A.

    1977-01-01

    Reference is made to liquid metal cooled nuclear reactors. In the arrangement described the reactor vessel is clad with thermal insulation comprising a layer of insulating blocks spaced from the wall and from each other; each block is rigidly secured to the wall, and the interspaces are substantially closed against convectional flow of liquid by resilient closure members. A membrane covering is provided for the layer of blocks, with venting means to allow liquid from the reactor vessel to penetrate between the covering and the layer of blocks. The membrane covering may comprise a stainless steel sheet ribbed in orthogonal pattern to give flexibility for the accommodation of thermal strain. The insulating blocks may be comprised of stainless steel or cellular or porous material and may be hollow shells containing ceramic material or gas fillings. (U.K.)

  14. Topological insulators

    CERN Document Server

    Franz, Marcel

    2013-01-01

    Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

  15. Boson localization and the superfluid-insulator transition

    International Nuclear Information System (INIS)

    Fisher, M.P.A.; Weichman, P.B.; Grinstein, G.; Fisher, D.S.; Condensed Matter Physics 114-36, California Institute of Technology, Pasadena, California 91125; IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York 10598; Joseph Henry Laboratory of Physics, Jadwin Hall, Princeton University, Princeton, New Jersey 08544)

    1989-01-01

    The phase diagrams and phase transitions of bosons with short-ranged repulsive interactions moving in periodic and/or random external potentials at zero temperature are investigated with emphasis on the superfluid-insulator transition induced by varying a parameter such as the density. Bosons in periodic potentials (e.g., on a lattice) at T=0 exhibit two types of phases: a superfluid phase and Mott insulating phases characterized by integer (or commensurate) boson densities, by the existence of a gap for particle-hole excitations, and by zero compressibility. Generically, the superfluid onset transition in d dimensions from a Mott insulator to superfluidity is ''ideal,'' or mean field in character, but at special multicritical points with particle-hole symmetry it is in the universality class of the (d+1)-dimensional XY model. In the presence of disorder, a third, ''Bose glass'' phase exists. This phase is insulating because of the localization effects of the randomness and analogous to the Fermi glass phase of interacting fermions in a strongly disordered potential

  16. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng; Randel, Jason C.; Peng, Hailin; Cha, Judy J.; Meister, Stefan; Lai, Keji; Chen, Yulin; Shen, Zhi-Xun; Manoharan, Hari C.; Cui, Yi

    2010-01-01

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive

  17. Negative-ion current density dependence of the surface potential of insulated electrode during negative-ion implantation

    International Nuclear Information System (INIS)

    Tsuji, Hiroshi; Okayama, Yoshio; Toyota, Yoshitaka; Gotoh, Yasuhito; Ishikawa, Junzo; Sakai, Shigeki; Tanjyo, Masayasu; Matsuda, Kouji.

    1994-01-01

    Positive ion implantation has been utilized as the method of impurity injection in ultra-LSI production, but the problem of substrate charging cannot be resolved by conventional charge compensation method. It was forecast that by negative ion implantation, this charging problem can be resolved. Recently the experiment on the negative ion implantation into insulated electrodes was carried out, and the effect of negative ion implantation to this problem was proved. However, the dependence of charged potential on the increase of negative ion current at the time of negative ion implantation is a serious problem in large current negative ion implantation hereafter. The charged potential of insulated conductor substrates was measured by the negative ion implantation using the current up to several mA/cm 2 . The experimental method is explained. Medium current density and high current density negative ion implantation and charged potential are reported. Accordingly in negative ion implantation, if current density is optimized, the negative ion implantation without charging can be realized. (K.I.)

  18. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator.

    Science.gov (United States)

    Farajollahpour, T; Jafari, S A

    2018-01-10

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the 'ARPES-dark' state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  19. Semiconductor of spinons: from Ising band insulator to orthogonal band insulator

    Science.gov (United States)

    Farajollahpour, T.; Jafari, S. A.

    2018-01-01

    We use the ionic Hubbard model to study the effects of strong correlations on a two-dimensional semiconductor. The spectral gap in the limit where on-site interactions are zero is set by the staggered ionic potential, while in the strong interaction limit it is set by the Hubbard U. Combining mean field solutions of the slave spin and slave rotor methods, we propose two interesting gapped phases in between: (i) the insulating phase before the Mott phase can be viewed as gapping a non-Fermi liquid state of spinons by the staggered ionic potential. The quasi-particles of underlying spinons are orthogonal to physical electrons, giving rise to the ‘ARPES-dark’ state where the ARPES gap will be larger than the optical and thermal gap. (ii) The Ising insulator corresponding to ordered phase of the Ising variable is characterized by single-particle excitations whose dispersion is controlled by Ising-like temperature and field dependences. The temperature can be conveniently employed to drive a phase transition between these two insulating phases where Ising exponents become measurable by ARPES and cyclotron resonance. The rare earth monochalcogenide semiconductors where the magneto-resistance is anomalously large can be a candidate system for the Ising band insulator. We argue that the Ising and orthogonal insulating phases require strong enough ionic potential to survive the downward renormalization of the ionic potential caused by Hubbard U.

  20. Dissociative adsorption of environment-friendly insulating medium C3F7CN on Cu(111) and Al(111) surface: A theoretical evaluation

    Science.gov (United States)

    Zhang, Xiaoxing; Li, Yi; Chen, Dachang; Xiao, Song; Tian, Shuangshuang; Tang, Ju; Wang, Dibo

    2018-03-01

    SF6 is extensively used in electrical applications because of its excellent insulation and arc extinguishing performance, but its strong greenhouse effect has negative impact on the atmosphere. The excellent performance of C3F7CN in greenhouse effect, insulation ability, safety, and thermal stability has been demonstrated, indicating that this compound can replace SF6 in electrical applications. However, little information is available on the compatibility of C3F7CN with metals, such as copper and aluminum, in devices. Material compatibility between new gas mixtures and materials used in Gas Insulated Switchgear (GIS) should be investigated to determine the long-term behavior of materials. In this paper, dissociative adsorption of C3F7CN on Cu (1 1 1) and Al (1 1 1) surfaces were analyzed based on density functional theory. Adsorption energy, charge transfer, density of states, and electron density difference of interaction between C3F7CN and two metals were analyzed. It was found that the adsorption energy of C3F7CN adsorbed on Cu (1 1 1) and Al (1 1 1) is both below 0.8 eV. This value indicates that the interaction between them is not very strong. In addition, the dissociation reaction path of gas molecules after adsorption requires certain activation energy. Therefore, C3F7CN and copper or aluminum have certain compatibility and the compatibility of C3F7CN with aluminum is better than that of copper. Related results provide a reference for predicting the aging mechanism of equipment and the selection or modification of major materials for equipment.

  1. Gigantic 2D laser-induced photovoltaic effect in magnetically doped topological insulators for surface zero-bias spin-polarized current generation

    Science.gov (United States)

    Shikin, A. M.; Voroshin, V. Yu; Rybkin, A. G.; Kokh, K. A.; Tereshchenko, O. E.; Ishida, Y.; Kimura, A.

    2018-01-01

    A new kind of 2D photovoltaic effect (PVE) with the generation of anomalously large surface photovoltage up to 210 meV in magnetically doped topological insulators (TIs) has been studied by the laser time-resolved pump-probe angle-resolved photoelectron spectroscopy. The PVE has maximal efficiency for TIs with high occupation of the upper Dirac cone (DC) states and the Dirac point located inside the fundamental energy gap. For TIs with low occupation of the upper DC states and the Dirac point located inside the valence band the generated surface photovoltage is significantly reduced. We have shown that the observed giant PVE is related to the laser-generated electron-hole asymmetry followed by accumulation of the photoexcited electrons at the surface. It is accompanied by the 2D relaxation process with the generation of zero-bias spin-polarized currents flowing along the topological surface states (TSSs) outside the laser beam spot. As a result, the spin-polarized current generates an effective in-plane magnetic field that is experimentally confirmed by the k II-shift of the DC relative to the bottom non-spin-polarized conduction band states. The realized 2D PVE can be considered as a source for the generation of zero-bias surface spin-polarized currents and the laser-induced local surface magnetization developed in such kind 2D TSS materials.

  2. The Mott transition in the strong coupling perturbation theory

    International Nuclear Information System (INIS)

    Sherman, A.

    2015-01-01

    Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U→0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at U c =√(3)Δ/2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0U c the Mott gap disappears

  3. The Mott transition in the strong coupling perturbation theory

    Science.gov (United States)

    Sherman, A.

    2015-01-01

    Using the strong coupling diagram technique a self-consistent equation for the electron Green's function is derived for the repulsive Hubbard model. Terms of two lowest orders of the ratio of the bandwidth Δ to the Hubbard repulsion U are taken into account in the irreducible part of the Larkin equation. The obtained equation is shown to retain causality and reduces to Green's function of uncorrelated electrons in the limit U → 0. Calculations were performed for the semi-elliptical initial band. It is shown that the approximation describes the Mott transition, which occurs at Uc =√{ 3 } Δ / 2. This value coincides with that obtained in the Hubbard-III approximation. At half-filling, for 0 self-energy is nonzero at the Fermi level, which indicates that the obtained solution is not a Fermi liquid. At small deviations from half-filling the density of states shifts along the frequency axis without perceptible changes in its shape. For larger deviations the density of states is modified: it is redistributed in favor of the subband, in which the Fermi level is located, and for U >Uc the Mott gap disappears.

  4. Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

    Science.gov (United States)

    Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

    2018-01-01

    Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

  5. The effect of insulated combustion chamber surfaces on direct-injected diesel engine performance, emissions, and combustion

    Science.gov (United States)

    Dickey, Daniel W.; Vinyard, Shannon; Keribar, Rifat

    1988-01-01

    The combustion chamber of a single-cylinder, direct-injected diesel engine was insulated with ceramic coatings to determine the effect of low heat rejection (LHR) operation on engine performance, emissions, and combustion. In comparison to the baseline cooled engine, the LHR engine had lower thermal efficiency, with higher smoke, particulate, and full load carbon monoxide emissions. The unburned hydrocarbon emissions were reduced across the load range. The nitrous oxide emissions increased at some part-load conditions and were reduced slightly at full loads. The poor LHR engine performance was attributed to degraded combustion characterized by less premixed burning, lower heat release rates, and longer combustion duration compared to the baseline cooled engine.

  6. Combined effect of bulk and surface damage on strip insulation properties of proton irradiated n$^{+}$-p silicon strip sensors

    CERN Document Server

    Dalal, R; Ranjan, K; Moll, M; Elliott-Peisert, A

    2014-01-01

    Silicon sensors in next generation hadron colliders willface a tremendously harsh radiation environment. Requirement tostudy rarest reaction channels with statistical constraints hasresulted in a huge increment in radiation flux, resulting in bothsurface damage and bulk damage. For sensors which are used in acharged hadron environment, both of these degrading processes takeplace simultaneously. Recently it has been observed in protonirradiated n$^{+}$-p Si strip sensors that n$^{+}$ strips had a goodinter-strip insulation with low values of p-spray and p-stop dopingdensities which is contrary to the expected behaviour from thecurrent understanding of radiation damage. In this work a simulationmodel has been devised incorporating radiation damage to understandand provide a possible explanation to the observed behaviour ofirradiated sensors.

  7. Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O: A direct observation

    Energy Technology Data Exchange (ETDEWEB)

    Wei Wei; Nori, Sudhakar [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Jin Chunming [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC (United States); Narayan, Roger J., E-mail: roger_narayan@unc.edu [Department of Biomedical Engineering, University of North Carolina and North Carolina State University, Campus Box 7115, Raleigh, NC 27695-7115 (United States); Ponarin, Dmtri; Smirnov, Alex [Department of Chemistry, North Carolina State University, Raleigh, NC (United States)

    2010-07-25

    This paper reports the direct evidence for Mott transition in Ga-doped Mg{sub x}Zn{sub 1-x}O thin films. Highly transparent Ga-doped Mg{sub x}Zn{sub 1-x}O thin films were grown on c-plane sapphire substrates using pulsed laser deposition. 0.1 at.%, 0.5 at.% and 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O films were selected for resistivity measurements in the temperature range from 250 K to 40 mK. The 0.1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical insulator-like behavior and the 1 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O thin film showed typical metal-like behavior. The 0.5 at.% Ga-doped Mg{sub 0.1}Zn{sub 0.9}O film showed increasing resistivity with decreasing temperature; resistivity was saturated with a value of 1.15 x 10{sup -2} {Omega} cm at 40 mK, which is characteristic of the metal-insulator transition region. Temperature-dependent conductivity {sigma}(T) in the low temperature range revealed that the electron-electron scattering is the dominant dephasing mechanism. The inelastic scattering time is found to vary as T{sup -3/2}.

  8. Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

    Science.gov (United States)

    Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

    2013-03-01

    A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

  9. An iterative regularization method in estimating the transient heat-transfer rate on the surface of the insulation layer of a double circular pipe

    International Nuclear Information System (INIS)

    Chen, W.-L.; Yang, Y.-C.

    2009-01-01

    In this study, a conjugate gradient method based inverse algorithm is applied to estimate the unknown space- and time-dependent heat-transfer rate on the surface of the insulation layer of a double circular pipe heat exchanger using temperature measurements. It is assumed that no prior information is available on the functional form of the unknown heat-transfer rate; hence the procedure is classified as the function estimation in inverse calculation. The temperature data obtained from the direct problem are used to simulate the temperature measurements. The accuracy of the inverse analysis is examined by using simulated exact and inexact temperature measurements. Results show that an excellent estimation on the space- and time-dependent heat-transfer rate can be obtained for the test case considered in this study.

  10. Effects of surface plasma treatment on threshold voltage hysteresis and instability in metal-insulator-semiconductor (MIS) AlGaN/GaN heterostructure HEMTs

    Science.gov (United States)

    Zaidi, Z. H.; Lee, K. B.; Roberts, J. W.; Guiney, I.; Qian, H.; Jiang, S.; Cheong, J. S.; Li, P.; Wallis, D. J.; Humphreys, C. J.; Chalker, P. R.; Houston, P. A.

    2018-05-01

    In a bid to understand the commonly observed hysteresis in the threshold voltage (VTH) in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors during forward gate bias stress, we have analyzed a series of measurements on devices with no surface treatment and with two different plasma treatments before the in-situ Al2O3 deposition. The observed changes between samples were quasi-equilibrium VTH, forward bias related VTH hysteresis, and electrical response to reverse bias stress. To explain these effects, a disorder induced gap state model, combined with a discrete level donor, at the dielectric/semiconductor interface was employed. Technology Computer-Aided Design modeling demonstrated the possible differences in the interface state distributions that could give a consistent explanation for the observations.

  11. Superfluid and insulating phases in an interacting-boson model: mean-field theory and the RPA

    International Nuclear Information System (INIS)

    Sheshadri, K.; Pandit, R.; Krishnamurthy, H.R.; Ramakrishnan, T.V.

    1993-01-01

    The bosonic Hubbard model is studied via a simple mean-field theory. At zero temperature, in addition to yielding a phase diagram that is qualitatively correct, namely a superfluid phase for non-integer fillings and a Mott transition from a superfluid to an insulating phase for integer fillings, this theory gives results that are in good agreement with Monte Carlo simulations. In particular, the superfluid fraction obtained as a function of the interaction strength U for both integer and non-integer fillings is close to the simulation results. In all phases the excitation spectra are obtained by using the random phase approximation (RPA): the spectrum has a gap in the insulating phase and is gapless (and linear at small wave vectors) in the superfluid phase. Analytic results are presented in the limits of large U and small superfluid density. Finite-temperature phase diagrams and the Mott-insulator-normal-phase crossover are also described. (orig.)

  12. Extremely large nonsaturating magnetoresistance and ultrahigh mobility due to topological surface states in the metallic Bi2Te3 topological insulator

    Science.gov (United States)

    Shrestha, K.; Chou, M.; Graf, D.; Yang, H. D.; Lorenz, B.; Chu, C. W.

    2017-05-01

    Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge-carrier concentrations. At low charge-carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating the dominance of topological surface states in magnetoconductivity. At high charge-carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large nonsaturating magnetoresistance and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge-carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge-carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magnetoelectric sensors and memory devices.

  13. The inaccuracy of heat transfer characteristics for non-insulated and insulated spherical containers neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Wong, King-Leung; Salazar, Jose Luis Leon; Prasad, Leo; Chen, Wen-Lih

    2011-01-01

    In this investigation, the differences of heat transfer characteristics for insulated and non-insulated spherical containers between considering and neglecting the influence of heat radiation are studied by the simulations in some practical situations. It is found that the heat radiation effect cannot be ignored in conditions of low ambient convection heat coefficients (such ambient air) and high surface emissivities, especially for the non-insulated and thin insulated cases. In most practical situations when ambient temperature is different from surroundings temperature and the emissivity of insulation surface is different from that of metal wall surface, neglecting heat radiation will result in inaccurate insulation effect and heat transfer errors even with very thick insulation. However, the insulation effect considering heat radiation will only increase a very small amount after some dimensionless insulated thickness (such insulation thickness/radius ≥0.2 in this study), thus such dimensionless insulated thickness can be used as the optimum thickness in practical applications. Meanwhile, wrapping a material with low surface emissivity (such as aluminum foil) around the oxidized metal wall or insulation layer (always with high surface emissivity) can achieve very good insulated effect for the non-insulated or thin insulated containers.

  14. Winding Up of the Wave-Function Phase by an Insulator-to-Superfluid Transition in a Ring of Coupled Bose-Einstein Condensates

    International Nuclear Information System (INIS)

    Dziarmaga, Jacek; Meisner, Jakub; Zurek, Wojciech H.

    2008-01-01

    We study phase transition from the Mott insulator to superfluid in a periodic optical lattice. Kibble-Zurek mechanism predicts buildup of winding number through random walk of BEC phases, with the step size scaling as a third root of transition rate. We confirm this and demonstrate that this scaling accounts for the net winding number after the transition

  15. Laccase-Catalyzed Surface Modification of Thermo-Mechanical Pulp (TMP) for the Production of Wood Fiber Insulation Boards Using Industrial Process Water

    Science.gov (United States)

    Schubert, Mark; Ruedin, Pascal; Civardi, Chiara; Richter, Michael; Hach, André; Christen, Herbert

    2015-01-01

    Low-density wood fiber insulation boards are traditionally manufactured in a wet process using a closed water circuit (process water). The water of these industrial processes contains natural phenolic extractives, aside from small amounts of admixtures (e.g., binders and paraffin). The suitability of two fungal laccases and one bacterial laccase was determined by biochemical characterization considering stability and substrate spectra. In a series of laboratory scale experiments, the selected commercial laccase from Myceliophtora thermophila was used to catalyze the surface modification of thermo-mechanical pulp (TMP) using process water. The laccase catalyzed the covalent binding of the phenolic compounds of the process water onto the wood fiber surface and led to change of the surface chemistry directly via crosslinking of lignin moieties. Although a complete substitution of the binder was not accomplished by laccase, the combined use of laccase and latex significantly improved the mechanical strength properties of wood fiber boards. The enzymatically-treated TMP showed better interactions with the synthetic binder, as shown by FTIR-analysis. Moreover, the enzyme is extensively stable in the process water and the approach requires no fresh water as well as no cost-intensive mediator. By applying a second-order polynomial model in combination with the genetic algorithm (GA), the required amount of laccase and synthetic latex could be optimized enabling the reduction of the binder by 40%. PMID:26046652

  16. Tank Insulation

    Science.gov (United States)

    1979-01-01

    For NASA's Apollo program, McDonnell Douglas Astronautics Company, Huntington Beach, California, developed and built the S-IVB, uppermost stage of the three-stage Saturn V moonbooster. An important part of the development task was fabrication of a tank to contain liquid hydrogen fuel for the stage's rocket engine. The liquid hydrogen had to be contained at the supercold temperature of 423 degrees below zero Fahrenheit. The tank had to be perfectly insulated to keep engine or solar heat from reaching the fuel; if the hydrogen were permitted to warm up, it would have boiled off, or converted to gaseous form, reducing the amount of fuel available to the engine. McDonnell Douglas' answer was a supereffective insulation called 3D, which consisted of a one-inch thickness of polyurethane foam reinforced in three dimensions with fiberglass threads. Over a 13-year development and construction period, the company built 30 tanks and never experienced a failure. Now, after years of additional development, an advanced version of 3D is finding application as part of a containment system for transporting Liquefied Natural Gas (LNG) by ship.

  17. Mottness in high-temperature copper-oxide superconductors

    International Nuclear Information System (INIS)

    Phillips, Philip; Choy, T.-P.; Leigh, Robert G

    2009-01-01

    The standard theory of metals, Fermi liquid theory, hinges on the key assumption that although the electrons interact, the low-energy excitation spectrum stands in a one-to-one correspondence with that of a non-interacting system. In the normal state of the copper-oxide high-temperature superconductors, drastic deviations from the Fermi liquid picture are obtained, highlighted by a pseudogap, broad spectral features and T-linear resistivity. A successful theory in this context must confront the highly constraining scaling argument which establishes that all 4-Fermi interactions are irrelevant (except for pairing) at a Fermi surface. This argument lays plain that new low-energy degrees of freedom are necessary. This paper focuses on the series of experiments on copper-oxide superconductors which reveal that the number of low-energy addition states per electron per spin exceeds unity, in direct violation of the key Fermi liquid tenet. These experiments point to new degrees of freedom, not made out of the elemental excitations, as the key mechanism by which Fermi liquid theory breaks down in the cuprates. A recent theoretical advance which permits an explicit integration of the high-energy scale in the standard model for the cuprates reveals the source of the new dynamical degrees of freedom at low energies, a charge 2e bosonic field which has nothing to do with pairing but rather represents the mixing with the high-energy scales. We demonstrate explicitly that at half-filling, this new degree of freedom provides a dynamical mechanism for the generation of the charge gap and antiferromagnetism in the insulating phase. At finite doping, many of the anomalies of the normal state of the cuprates including the pseudogap, T-linear resistivity and the mid-infrared band are reproduced. A possible route to superconductivity is explored

  18. Super-insulation

    International Nuclear Information System (INIS)

    Gerold, J.

    1985-01-01

    The invention concerns super-insulation, which also acts as spacing between two pressurized surfaces, where the crossing bars in at least two layers are provided, with interposed foil. The super-insulation is designed so that it can take compression forces and limits thermal radiation and thermal conduction sufficiently, where the total density of heat flow is usually limited to a few watts per m 2 . The solution to the problem is characterized by the fact that the bars per layer are parallel and from layer to layer they are at an angle to each other and the crossover positions of the bars of different layers are at fixed places and so form contact columns. The basic idea is that bars crossing over each other to support compression forces are used so that contact columns are formed, which are compressed to a certain extent by the load. (orig./PW) [de

  19. Fermi-surface reconstruction and the origin of high-temperature superconductivity

    International Nuclear Information System (INIS)

    Norman, M.R.

    2010-01-01

    In crystalline lattices, the conduction electrons form waves, known as Bloch states, characterized by a momentum vector k. The defining characteristic of metals is the surface in momentum space that separates occupied from unoccupied states. This 'Fermi' surface may seem like an abstract concept, but it can be measured and its shape can have profound consequences for the thermal, electronic, and magnetic properties of a material. In the presence of an external magnetic field B, electrons in a metal spiral around the field direction, and within a semiclassical momentum-space picture, orbit around the Fermi surface. Physical properties, such as the magnetization, involve a sum over these orbits, with extremal orbits on the Fermi surface, i.e., orbits with minimal or maximal area, dominating the sum (Fig. 1(a)). Upon quantization, the resulting electron energy spectrum consists of Landau levels separated by the cyclotron energy, which is proportional to the magnetic field. As the magnetic field causes subsequent Landau levels to cross through the Fermi energy, physical quantities, such as the magnetization or resistivity, oscillate in response. It turns out that the period of these oscillations, when plotted as a function of 1/B, is proportional to the area of the extremal orbit in a plane perpendicular to the applied field (Fig. 1(b)). The power of the quantum oscillation technique is obvious: By changing the field direction, one can map out the Fermi surface, much like a blind man feeling an elephant. The nature and topology of the Fermi surface in high-T c cuprates has been debated for many years. Soon after the materials were discovered by Bednorz and Mueller, it was realized that superconductivity was obtained by doping carriers into a parent insulating state. This insulating state appears to be due to strong electronic correlations, and is known as a Mott insulator. In the case of cuprates, the electronic interactions force the electrons on the copper ion

  20. Anti-parallel polarization switching in a triglycine sulfate organic ferroelectric insulator: The role of surface charges

    Science.gov (United States)

    Ma, He; Wu, Zhuangchun; Peng, Dongwen; Wang, Yaojin; Wang, Yiping; Yang, Ying; Yuan, Guoliang

    2018-04-01

    Four consecutive ferroelectric polarization switchings and an abnormal ring-like domain pattern can be introduced by a single tip bias of a piezoresponse force microscope in the (010) triglycine sulfate (TGS) crystal. The external electric field anti-parallel to the original polarization induces the first polarization switching; however, the surface charges of TGS can move toward the tip location and induce the second polarization switching once the tip bias is removed. The two switchings allow a ring-like pattern composed of the central domain with downward polarization and the outer domain with upward polarization. Once the two domains disappear gradually as a result of depolarization, the other two polarization switchings occur one by one at the TGS where the tip contacts. However, the backswitching phenomenon does not occur when the external electric field is parallel to the original polarization. These results can be explained according to the surface charges instead of the charges injected inside.

  1. Coulomb effects in relativistic laser-assisted Mott scattering

    International Nuclear Information System (INIS)

    Ngoko Djiokap, J.M.; Kwato Njock, M.G.; Tetchou Nganso, H.M.

    2004-09-01

    We reconsider the influence of the Coulomb interaction on the process of relativistic Mott scattering in a powerful electromagnetic plane wave for which the ponderomotive energy is of the order of the magnitude of the electron's rest mass. Coulomb effects of the bare nucleus on the laser-dressed electron are treated more completely than in the previous work of Li et al. [J. Phys. B: At. Mol. Opt. Phys. 37 (2004) 653]. To this end we use Coulomb-Dirac-Volkov functions to describe the initial and the final states of the electron. First-order Born differential cross sections of induced and inverse bremsstrahlung are obtained for circularly and linearly polarized laser light. Numerical calculations are carried out from both polarizations, for various nucleus charge values, three angular configurations and an incident energy in the MeV range. It is found that for parameters used in the present work, incorporating Coulomb effects of the target nucleus either in the initial state or in the final state yields cross sections which are quite similar whatever the scattering geometry and polarization considered. When Coulomb distortions are included in both states, the cross sections are strongly modified with the increase of Z, as compared to the outcome of the prior form of the T-matrix treatment. (author)

  2. Quantum Critical “Opalescence” around Metal-Insulator Transitions

    Science.gov (United States)

    Misawa, Takahiro; Yamaji, Youhei; Imada, Masatoshi

    2006-08-01

    Divergent carrier-density fluctuations equivalent to the critical opalescence of gas-liquid transition emerge around a metal-insulator critical point at a finite temperature. In contrast to the gas-liquid transitions, however, the critical temperatures can be lowered to zero, which offers a challenging quantum phase transition. We present a microscopic description of such quantum critical phenomena in two dimensions. The conventional scheme of phase transitions by Ginzburg, Landau, and Wilson is violated because of its topological nature. It offers a clear insight into the criticalities of metal-insulator transitions (MIT) associated with Mott or charge-order transitions. Fermi degeneracy involving the diverging density fluctuations generates emergent phenomena near the endpoint of the first-order MIT and must shed new light on remarkable phenomena found in correlated metals such as unconventional cuprate superconductors. It indeed accounts for the otherwise puzzling criticality of the Mott transition recently discovered in an organic conductor. We propose to accurately measure enhanced dielectric fluctuations at small wave numbers.

  3. Direct Observation of Surface Potential Distribution in Insulation Resistance Degraded Acceptor-Doped BaTiO3 Multilayered Ceramic Capacitors

    Science.gov (United States)

    Hong, Kootak; Lee, Tae Hyung; Suh, Jun Min; Park, Jae-Sung; Kwon, Hyung-Soon; Choi, Jaeho; Jang, Ho Won

    2018-05-01

    Insulation resistance (IR) degradation in BaTiO3 is a key issue for developing miniaturized multilayer ceramic capacitors (MLCCs) with high capacity. Despite rapid progress in BaTiO3-based MLCCs, the mechanism of IR degradation is still controversial. In this study, we demonstrate the Al doping effect on IR degradation behavior of BaTiO3 MLCCs by electrical measurements and scanning Kelvin probe microscopy (SKPM). As the Al doping concentration in BaTiO3 increases, IR degradation of MLCCs seems to be suppressed from electrical characterization results. However, SKPM results reveal that the conductive regions near the cathode become lager with Al doping after IR degradation. The formation of conducting regions is attributed to the migration of oxygen vacancies, which is the origin of IR degradation in BaTiO3, in dielectric layers. These results imply that acceptor doping in BaTiO3 solely cannot suppress the IR degradation in MLCC even though less asymmetric IR characteristics and IR degradation in MLCCs with higher Al doping concentration are observed from electrical characterization. Our results strongly suggest that observing the surface potential distribution in IR degraded dielectric layers using SKPM is an effective method to unravel the mechanism of IR degradation in MLCCs.

  4. Observation of a Slater-type metal-to-insulator transition in Sr$_2$IrO$_4$ from time-resolved photo-carrier dynamics

    OpenAIRE

    Hsieh, D.; Mahmood, F.; Torchinsky, D. H.; Cao, G.; Gedik, N.

    2012-01-01

    We perform a time-resolved optical study of Sr$_2$IrO$_4$ to understand the influence of magnetic ordering on the low energy electronic structure of a strongly spin-orbit coupled $J_{eff}$=1/2 Mott insulator. By studying the recovery dynamics of photo-carriers excited across the Mott gap, we find that upon cooling through the N\\'{e}el temperature $T_N$ the system evolves continuously from a metal-like phase with fast ($\\sim$50 fs) and excitation density independent relaxation dynamics to a ga...

  5. Surface behavior based on ion-induced secondary electron emission from semi-insulating materials in breakdown evolution

    Energy Technology Data Exchange (ETDEWEB)

    Koc, Emrah; Karakoese, Sema [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Salamov, Bahtiyar G. [Department of Physics, Faculty of Sciences, Gazi University, 06500 Ankara (Turkey); Institute of Physics, National Academy of Science, 1143 Baku (Azerbaijan)

    2013-09-15

    This study focuses on analyses of secondary electron emission (SEE) at semiconductor surfaces when the sufficient conditions of space-time distribution occur. Experimental measurements and calculations with the approach of Townsend coefficients, which include the evaluations of ionization coefficient ({alpha}) and SEE coefficient ({gamma}) were performed in high-ohmic InP, GaAs, and Si semiconductor cathodes with argon and air environments in a wide range of E/N (300-10 000 Td). The direct calculations of {gamma} were carried out to determine the behavior of cold-semiconductor cathode current in a wide range of microgaps (45-525 {mu}m). Paschen curves are interpreted in the dependence of large pd range on breakdown voltage through {gamma} and {alpha}/N. Ion-induced secondary electrons exhibit the direct behaviors affecting the timescale of breakdown evolution in the vicinity of the Paschen minimum during the natural bombardment process with ions of semiconductor cathodes. Also, when {alpha}/N rapidly drops and the excitations of gas atoms densely occupy the gas volume, we determined that the photoelectric effect provides a growth for electron emission from semiconductor surfaces at the breakdown stage at the reduced values of E/N. At all pressures, the emission magnitudes of electrons liberated by semiconductor cathodes into vacuum are found as {gamma}{sub InP} > {gamma}{sub GaAs} > {gamma}{sub Si} in breakdown evolution. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Topological Insulators and Superconductors for Innovative Devices

    Science.gov (United States)

    2015-03-20

    Final 3. DATES COVERED (From - To) 20120321 - 20150320 4. TITLE AND SUBTITLE Topological insulators and superconductors for innovative...locking, which hold promise for various innovative devices. Similarly, topological superconductors are associated with exotic surface states, which...298 (Rev. 8/98) Prescribed by ANSI Std. Z39.18 Final Report Title: Topological Insulators and Superconductors for Innovative Devices

  7. The happy marriage between electron-phonon superconductivity and Mott physics in Cs3C60: A first-principle phase diagram

    Science.gov (United States)

    Capone, Massimo; Nomura, Yusuke; Sakai, Shiro; Giovannetti, Gianluca; Arita, Ryotaro

    The phase diagram of doped fullerides like Cs3C60 as a function of the spacing between fullerene molecules is characterized by a first-order transition between a Mott insulator and an s-wave superconductor with a dome-shaped behavior of the critical temperature. By means of an ab-initio modeling of the bandstructure, the electron-phonon interaction and the interaction parameter and a Dynamical Mean-Field Theory solution, we reproduce the phase diagram and demonstrate that phonon superconductivity benefits from strong correlations confirming earlier model predictions. The role of correlations is manifest also in infrared measurements carried out by L. Baldassarre. The superconducting phase shares many similarities with ''exotic'' superconductors with electronic pairing, suggesting that the anomalies in the ''normal'' state, rather than the pairing glue, can be the real common element unifying a wide family of strongly correlated superconductors including cuprates and iron superconductors

  8. Uniaxial-Strain-Orientation Dependence of the Competition between Mott and Charge Ordered Phases and their Corresponding Superconductivity of β-(BDA-TTP)2I3

    Science.gov (United States)

    Nuruzzaman, Md.; Yokogawa, Keiichi; Yoshino, Harukazu; Yoshimoto, Haruo; Kikuchi, Koichi; Kaihatsu, Takayuki; Yamada, Jun-ichi; Murata, Keizo

    2012-12-01

    We studied the electronic transport properties of the charge transfer salt β-(BDA-TTP)2I3 [BDA-TTP: 2,5-bis(1,3-dithian-2-ylidene)-1,3,4,6-tetrathiapentalene] by applying uniaxial strains along the three crystallographic axes, and obtained three corresponding temperature-pressure phase diagrams. Three phase diagrams were quite dependent on the direction of compression. Following the preceding paper by Kikuchi et al., we speculate that the insulating states are of 1/2-filled Mott insulators for the a- and b-axes compressions, and of 1/4-filled charge ordered states for the c-axis compression as well as hydrostatic pressure. The superconducting phase under uniaxial strain was realized with Tc = 5 K at 1.9 GPa along the a-axis and with Tc = 5.6 K at 1.75 GPa along the b-axis. Superconductivity was also reproduced with a Tc of 9.5 K at 1.0 GPa for the c-axis compressions in the range of 0.85 to 1.53 GPa as previously reported. We studied tentative measurement on upper critical fields, Bc2's of these superconductivities and found that the extrapolated values, Bc2(0)'s, exceeded Pauli-limit by about 2--3 times. However, at least in terms of Bc2, the difference in superconductivity associated with two different insulating states was not clear.

  9. B-cell lymphoma with Mott cell differentiation in two young adult dogs.

    Science.gov (United States)

    Stacy, Nicole I; Nabity, Mary B; Hackendahl, Nicole; Buote, Melanie; Ward, Jennifer; Ginn, Pamela E; Vernau, William; Clapp, William L; Harvey, John W

    2009-03-01

    Two young adult dogs with gastrointestinal signs were each found to have an intra-abdominal mass based on physical examination and diagnostic imaging. On exploratory laparotomy, small intestinal masses and mesenteric lymphadenopathy were found in both dogs; a liver mass was also found in dog 1. Cytologic and histologic examination of intestinal and liver masses and mesenteric lymph nodes revealed 2 distinct lymphoid cell populations: lymphoblasts and atypical Mott cells. With Romanowsky stains, the atypical Mott cells contained many discrete, clear to pale blue cytoplasmic inclusions consistent with Russell bodies that were positive by immunohistochemistry for IgM and CD79a in both dogs and for IgG in dog 2. The Mott cells and occasional lymphoblasts stained strongly positive with periodic acid-Schiff. Using flow cytometric immunophenotyping in dog 1, 60% of peripheral blood mononuclear cells and 85% of cells in an affected lymph node were positive for CD21, CD79a, IgM, and MCH II, indicative of B-cells. With electron microscopy, disorganized and dilated endoplasmic reticulum was seen in Mott cells in tumors from both dogs. Antigen receptor gene rearrangement analysis of lymph node and intestinal masses indicated a clonal B-cell population. Based on cell morphology, tissue involvement, and evidence for clonal B-cell proliferation, we diagnosed neoplasms involving Mott cells. To the authors' knowledge, this is the second report of Mott cell tumors or, more appropriately, B-cell lymphoma with Mott cell differentiation, in dogs. More complete characterization of this neoplasm requires further investigation of additional cases. This lymphoproliferative disease should be considered as a differential diagnosis for canine gastrointestinal tumors.

  10. Tuning metal-insulator behavior in LaTiO3/SrTiO3 heterostructures integrated directly on Si(100) through control of atomic layer thickness

    Science.gov (United States)

    Ahmadi-Majlan, Kamyar; Chen, Tongjie; Lim, Zheng Hui; Conlin, Patrick; Hensley, Ricky; Chrysler, Matthew; Su, Dong; Chen, Hanghui; Kumah, Divine P.; Ngai, Joseph H.

    2018-05-01

    We present electrical and structural characterization of epitaxial LaTiO3/SrTiO3 heterostructures integrated directly on Si(100). By reducing the thicknesses of the heterostructures, an enhancement in carrier-carrier scattering is observed in the Fermi liquid behavior, followed by a metal to insulator transition in the electrical transport. The insulating behavior is described by activated transport, and its onset occurs near an occupation of 1 electron per Ti site within the SrTiO3, providing evidence for a Mott driven transition. We also discuss the role that structure and gradients in strain could play in enhancing the carrier density. The manipulation of Mott metal-insulator behavior in oxides grown directly on Si opens the pathway to harnessing strongly correlated phenomena in device technologies.

  11. Orthorhombic fulleride (CH3NH2)K3C60 close to Mott-Hubbard instability: Ab initio study

    Science.gov (United States)

    Potočnik, Anton; Manini, Nicola; Komelj, Matej; Tosatti, Erio; Arčon, Denis

    2012-08-01

    We study the electronic structure and magnetic interactions in methylamine-intercalated orthorhombic alkali-doped fullerene (CH3NH2)K3C60 within the density functional theory. As in the simpler ammonia intercalated compound (NH3)K3C60, the orthorhombic crystal-field anisotropy Δ lifts the t1u triple degeneracy at the Γ point and drives the system deep into the Mott-insulating phase. However, the computed Δ and conduction electron bandwidth W cannot alone account for the abnormally low experimental Néel temperature, TN=11 K, of the methylamine compound, compared to the much higher value TN=40 K of the ammonia one. Significant interactions between CH3NH2 and C603- are responsible for the stabilization of particular fullerene-cage distortions and the ensuing low-spin S=1/2 state. These interactions also seem to affect the magnetic properties, as interfullerene exchange interactions depend on the relative orientation of deformations of neighboring C603- molecules. For the ferro-orientational order of CH3NH2-K+ groups we find an apparent reduced dimensionality in magnetic exchange interactions, which may explain the suppressed Néel temperature. The disorder in exchange interactions caused by orientational disorder of CH3NH2-K+ groups could further contribute to this suppression.

  12. Concentration-elastic-stress instabilities in the distribution of ions and neutral particles in the insulator layer at the semiconductor surface

    International Nuclear Information System (INIS)

    Gol'dman, E. I.

    2006-01-01

    Mobile impurities in the form of ions and neutral associations are present in the insulator films that isolate the semiconductor from the metal electrode. If temperatures and the polarizing electric field are sufficiently high, impurities concentrate at the insulator-semiconductor interface where they exchange electrons with the semiconductor. It is shown that the pairwise interaction of particles via the field of elastic stresses caused by the concentration-related expansion of the insulator can give rise to an instability in the impurity distribution that is uniform over the contact. The stationary small-scale ordering of the particles over the contact of the insulator with the semiconductor arises in the solution of point defects, which is accompanied by annular flows of the particles

  13. Probing the spin-orbit Mott state in Sr3Ir2O7 by electron doping

    Science.gov (United States)

    Hogan, Thomas C.

    Iridium-based members of the Ruddlesden-Popper family of oxide compounds are characterized by a unique combination of energetically comparable effects: crystal-field splitting, spin-orbit coupling, and electron-electron interactions are all present, and the combine to produce a Jeff = 1/2 ground state. In the bilayer member of this series, Sr3Ir2O7, this state manifests as electrically insulating, with unpaired Ir4+ spins aligned along the long axis of the unit cell to produce a G-type antiferromagnet with an ordered moment of 0.36 uB. In this work, this Mott state is destabilized by electron doping via La3+ substitution on the Sr-site to produce (Sr1-x Lax)3Ir2O7. The introduction of carriers initially causes nano-scale phase-separated regions to develop before driving a global insulator-to-metal transition at x=0.04. Coinciding with this transition is the disappearance of evidence of magnetic order in the system in either bulk magnetization or magnetic scattering experiments. The doping also enhances a structural order parameter observed in the parent compound at forbidden reciprocal lattice vectors. A more complete structural solution is proposed to account for this previously unresolved distortion, and also offers an explanation as to the anomalous net ferromagnetism seen prior in bulk measurements. Finally, spin dynamics are probed via a resonant x-ray technique to reveal evidence of spin-dimer-like behavior dominated by inter-plane interactions. This result supports a bond-operator treatment of the interaction Hamiltonian, and also explains the doping dependence of high temperature magnetic susceptibility.

  14. Quantum criticality around metal-insulator transitions of strongly correlated electron systems

    Science.gov (United States)

    Misawa, Takahiro; Imada, Masatoshi

    2007-03-01

    Quantum criticality of metal-insulator transitions in correlated electron systems is shown to belong to an unconventional universality class with violation of the Ginzburg-Landau-Wilson (GLW) scheme formulated for symmetry breaking transitions. This unconventionality arises from an emergent character of the quantum critical point, which appears at the marginal point between the Ising-type symmetry breaking at nonzero temperatures and the topological transition of the Fermi surface at zero temperature. We show that Hartree-Fock approximations of an extended Hubbard model on square lattices are capable of such metal-insulator transitions with unusual criticality under a preexisting symmetry breaking. The obtained universality is consistent with the scaling theory formulated for Mott transitions and with a number of numerical results beyond the mean-field level, implying that preexisting symmetry breaking is not necessarily required for the emergence of this unconventional universality. Examinations of fluctuation effects indicate that the obtained critical exponents remain essentially exact beyond the mean-field level. It further clarifies the whole structure of singularities by a unified treatment of the bandwidth-control and filling-control transitions. Detailed analyses of the criticality, containing diverging carrier density fluctuations around the marginal quantum critical point, are presented from microscopic calculations and reveal the nature as quantum critical “opalescence.” The mechanism of emerging marginal quantum critical point is ascribed to a positive feedback and interplay between the preexisting gap formation present even in metals and kinetic energy gain (loss) of the metallic carrier. Analyses of crossovers between GLW type at nonzero temperature and topological type at zero temperature show that the critical exponents observed in (V,Cr)2O3 and κ-ET -type organic conductors provide us with evidence for the existence of the present marginal

  15. Effective field theory and integrability in two-dimensional Mott transition

    International Nuclear Information System (INIS)

    Bottesi, Federico L.; Zemba, Guillermo R.

    2011-01-01

    Highlights: → Mott transition in 2d lattice fermion model. → 3D integrability out of 2D. → Effective field theory for Mott transition in 2d. → Double Chern-Simons. → d-Density waves. - Abstract: We study the Mott transition in a two-dimensional lattice spinless fermion model with nearest neighbors density-density interactions. By means of a two-dimensional Jordan-Wigner transformation, the model is mapped onto the lattice XXZ spin model, which is shown to possess a quantum group symmetry as a consequence of a recently found solution of the Zamolodchikov tetrahedron equation. A projection (from three to two space-time dimensions) property of the solution is used to identify the symmetry of the model at the Mott critical point as U q (sl(2)-circumflex)xU q (sl(2)-circumflex), with deformation parameter q = -1. Based on this result, the low-energy effective field theory for the model is obtained and shown to be a lattice double Chern-Simons theory with coupling constant k = 1 (with the standard normalization). By further employing the effective filed theory methods, we show that the Mott transition that arises is of topological nature, with vortices in an antiferromagnetic array and matter currents characterized by a d-density wave order parameter. We also analyze the behavior of the system upon weak coupling, and conclude that it undergoes a quantum gas-liquid transition which belongs to the Ising universality class.

  16. Electric fields and electrical insulation

    DEFF Research Database (Denmark)

    McAllister, Iain Wilson

    2002-01-01

    The adoption of a field-theoretical approach to problems arising in the framework of electrical insulation is discussed with reference to six main topics, which have been addressed over the last 30 years. These include uniform field electrodes, Green's differential equation, electrode surface...... roughness, induced charge, electrostatic probes, and partial discharge transients, together with several follow-on aspects. Each topic is introduced and thereafter the progress achieved through the use of a field-theoretical approach is reviewed. Because the topics cover a wide spectrum of conditions......, it is amply demonstrated that such an approach can lead to significant progress in many areas of electrical insulation....

  17. Characterization techniques for ion bombarded insulators

    International Nuclear Information System (INIS)

    Borders, J.A.

    1987-01-01

    The chapter gives a comprehensive review of the experimental methods for the analysis of ion-bombarded insulators including optical and structural methods, resonance, energetic ion methods, and surface techniques. 48 refs.; 34 figs

  18. High Performance Slab-on-Grade Foundation Insulation Retrofits

    Energy Technology Data Exchange (ETDEWEB)

    Goldberg, Louise F. [NorthernSTAR, St. Paul, MN (United States); Mosiman, Garrett E. [NorthernSTAR, St. Paul, MN (United States)

    2015-09-01

    ?A more accurate assessment of SOG foundation insulation energy savings than traditionally possible is now feasible. This has been enabled by advances in whole building energy simulation with 3-dimensional foundation modelling integration at each time step together with an experimental measurement of the site energy savings of SOG foundation insulation. Ten SOG insulation strategies were evaluated on a test building to identify an optimum retrofit insulation strategy in a zone 6 climate (Minneapolis, MN). The optimum insulation strategy in terms of energy savings and cost effectiveness consisted of two components: (a) R-20 XPS insulation above grade, and, (b) R-20 insulation at grade (comprising an outer layer of R-10 insulation and an interior layer of R-12 poured polyurethane insulation) tapering to R-10 XPS insulation at half the below-grade wall height (the lower half of the stem wall was uninsulated). The optimum insulation strategy was applied to single and multi-family residential buildings in climate zone 4 - 7. The highest site energy savings of 5% was realized for a single family home in Duluth, MN, and the lowest savings of 1.4 % for a 4-unit townhouse in Richmond, VA. SOG foundation insulation retrofit simple paybacks ranged from 18 to 47 years. There are other benefits of SOG foundation insulation resulting from the increase in the slab surface temperatures. These include increased occupant thermal comfort, and a decrease in slab surface condensation particularly around the slab perimeter.

  19. Insulating phase in Sr{sub 2}IrO{sub 4}: An investigation using critical analysis and magnetocaloric effect

    Energy Technology Data Exchange (ETDEWEB)

    Bhatti, Imtiaz Noor; Pramanik, A.K., E-mail: akpramanik@mail.jnu.ac.in

    2017-01-15

    The nature of insulating phase in 5d based Sr{sub 2}IrO{sub 4} is quite debated as the theoretical as well as experimental investigations have put forward evidences in favor of both magnetically driven Slater-type and interaction driven Mott-type insulator. To understand this insulating behavior, we have investigated the nature of magnetic state in Sr{sub 2}IrO{sub 4} through studying critical exponents, low temperature thermal demagnetization and magnetocaloric effect. The estimated critical exponents do not exactly match with any universality class, however, the values obey the scaling behavior. The exponent values suggest that spin interaction in present material is close to mean-field model. The analysis of low temperature thermal demagnetization data, however, shows dual presence of localized- and itinerant-type of magnetic interaction. Moreover, field dependent change in magnetic entropy indicates magnetic interaction is close to mean-field type. While this material shows an insulating behavior across the magnetic transition, yet a distinct change in slope in resistivity is observed around T{sub c}. We infer that though the insulating phase in Sr{sub 2}IrO{sub 4} is more close to be Slater-type but the simultaneous presence of both Slater- and Mott-type is the likely scenario for this material. - Highlights: • Critical analysis shows Sr{sub 2}IrO{sub 4} has ferromagnetic ordering temperature T{sub c}~225 K. • Obtained critical exponents imply spin interaction is close to mean-field model. • Analysis of magneto-entropy data also supports mean-field type interaction. • However, the presence of both itinerant and localized spin interaction is evident. • Sr{sub 2}IrO{sub 4} has simultaneous presence of both Slater- and Mott-type insulating phase.

  20. Travel funds for Stanford University to Host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013

    Science.gov (United States)

    2016-02-25

    Travel funds for Stanford University to host Mott MURI Annual Review and Oxide Workshop, August 6-8, 2013 In conjunction with a program review for...Number of Papers published in non peer-reviewed journals: Final Report: Travel funds for Stanford University to host Mott MURI Annual Review and Oxide

  1. MUTIL, Asymmetry Factor of Mott Cross-Sections for Electron, Positron Scattering

    International Nuclear Information System (INIS)

    Idoeta, R.; Legarda, F.

    2002-01-01

    1 - Description of program or function: The asymmetry factor S of Mott's differential cross section for the scattering of electrons and positrons by point nuclei without screening is calculated for any energy, atomic number and angle of scattering. 2 - Method of solution: We have summed the conditionally convergent series, F and G, appearing in the asymmetry factor using two consecutive transformations: The one of Yennie, Ravenhall and Wilson and that of Euler till we have seven times six significant figures repeated in the factor S. 3 - Restrictions on the complexity of the problem: Those appearing in the use of Mott's cross section for unscreened point nuclei

  2. Economically optimal thermal insulation

    Energy Technology Data Exchange (ETDEWEB)

    Berber, J.

    1978-10-01

    Exemplary calculations to show that exact adherence to the demands of the thermal insulation ordinance does not lead to an optimal solution with regard to economics. This is independent of the mode of financing. Optimal thermal insulation exceeds the values given in the thermal insulation ordinance.

  3. Experimental studies of ions and atoms interaction with insulating surface; Etude experimentale de l'interaction rasante d'atomes et d'ions sur des surfaces isolantes

    Energy Technology Data Exchange (ETDEWEB)

    Villette, J

    2000-10-15

    Grazing collisions (<3 deg.) of keV ions and atoms: H{sup +}, Ne{sup +}, Ne{sup 0}, Na{sup +} on LiF (001) single crystal, an ionic insulator, are investigated by a time of flight technique. The incident beam is chopped and the scattered particles are collected on a position sensitive detector providing differential cross section while the time of flight gives the energy loss. Deflection plates allow the charge state analysis. Secondary electrons are detected in coincidence allowing direct measurements of electron emission yield, angular and energetic distribution through time of flight measurements. The target electronic structure characterized by a large band gap, governs the collisional processes: charge exchange, electronic excitations and electron emission. In particular, these studies show that the population of local target excitations surface excitons is the major contribution to the kinetic energy transfer (stopping power). Auger neutralization of Ne{sup +} and He{sup +} ions reveals the population of quasi-molecular excitons, an exciton bound on two holes. Referenced in the literature as trion. A direct energy balance determines the binding energy associated with these excited states of the surface. Besides these electronic energy loss processes, two nuclear energy loss mechanisms are characterized. These processes imply momentum transfer to individual target atoms during close binary collisions or, if the projectile is charged, to collective mode of optical phonons induced by the projectile coulomb field. The effect of the temperature on the scattering profile, the contribution of topological surface defects to the energy loss profile and to skipping motion on the surface are analyzed in view of classical trajectory simulations. (author)

  4. Chiral topological insulator of magnons

    Science.gov (United States)

    Li, Bo; Kovalev, Alexey A.

    2018-05-01

    We propose a magnon realization of 3D topological insulator in the AIII (chiral symmetry) topological class. The topological magnon gap opens due to the presence of Dzyaloshinskii-Moriya interactions. The existence of the topological invariant is established by calculating the bulk winding number of the system. Within our model, the surface magnon Dirac cone is protected by the sublattice chiral symmetry. By analyzing the magnon surface modes, we confirm that the backscattering is prohibited. By weakly breaking the chiral symmetry, we observe the magnon Hall response on the surface due to opening of the gap. Finally, we show that by changing certain parameters, the system can be tuned between the chiral topological insulator, three-dimensional magnon anomalous Hall, and Weyl magnon phases.

  5. Topological Insulators Dirac Equation in Condensed Matters

    CERN Document Server

    Shen, Shun-Qing

    2012-01-01

    Topological insulators are insulating in the bulk, but process metallic states around its boundary owing to the topological origin of the band structure. The metallic edge or surface states are immune to weak disorder or impurities, and robust against the deformation of the system geometry. This book, Topological insulators, presents a unified description of topological insulators from one to three dimensions based on the modified Dirac equation. A series of solutions of the bound states near the boundary are derived, and the existing conditions of these solutions are described. Topological invariants and their applications to a variety of systems from one-dimensional polyacetalene, to two-dimensional quantum spin Hall effect and p-wave superconductors, and three-dimensional topological insulators and superconductors or superfluids are introduced, helping readers to better understand this fascinating new field. This book is intended for researchers and graduate students working in the field of topological in...

  6. Thermal insulating panel

    Energy Technology Data Exchange (ETDEWEB)

    Hughes, J.T.

    1985-09-11

    A panel of thermal insulation material has at least one main portion which comprises a dry particulate insulation material compressed within a porous envelope so that it is rigid or substantially rigid and at least one auxiliary portion which is secured to and extends along at least one of the edges of the main portions. The auxiliary portions comprise a substantially uncompressed dry particulate insulation material contained within an envelope. The insulation material of the auxiliary portion may be the same as or may be different from the insulation material of the main portion. The envelope of the auxiliary portion may be made of a porous or a non-porous material. (author).

  7. Strain engineering and one-dimensional organization of metal-insulator domains in single-crystal vanadium dioxide beams.

    Science.gov (United States)

    Cao, J; Ertekin, E; Srinivasan, V; Fan, W; Huang, S; Zheng, H; Yim, J W L; Khanal, D R; Ogletree, D F; Grossman, J C; Wu, J

    2009-11-01

    Correlated electron materials can undergo a variety of phase transitions, including superconductivity, the metal-insulator transition and colossal magnetoresistance. Moreover, multiple physical phases or domains with dimensions of nanometres to micrometres can coexist in these materials at temperatures where a pure phase is expected. Making use of the properties of correlated electron materials in device applications will require the ability to control domain structures and phase transitions in these materials. Lattice strain has been shown to cause the coexistence of metallic and insulating phases in the Mott insulator VO(2). Here, we show that we can nucleate and manipulate ordered arrays of metallic and insulating domains along single-crystal beams of VO(2) by continuously tuning the strain over a wide range of values. The Mott transition between a low-temperature insulating phase and a high-temperature metallic phase usually occurs at 341 K in VO(2), but the active control of strain allows us to reduce this transition temperature to room temperature. In addition to device applications, the ability to control the phase structure of VO(2) with strain could lead to a deeper understanding of the correlated electron materials in general.

  8. Extension of the Mott-Gurney Law for a Bilayer Gap

    Science.gov (United States)

    Dubinov, A. E.; Kitayev, I. N.

    2018-04-01

    Steady drift states of an electron flow in a planar gap filled with a bilayer dielectric have been considered. Exact mathematical formulas have been derived that describe the distributions of the electrostatic potential and space charge limited electron flow current (extended Mott-Gurney law for a bilayer diode).

  9. Surface modification of polyimide gate insulators for solution-processed 2,7-didecyl[1]benzothieno[3,2-b][1]benzothiophene (C10-BTBT) thin-film transistors.

    Science.gov (United States)

    Jang, Kwang-Suk; Kim, Won Soo; Won, Jong-Myung; Kim, Yun-Ho; Myung, Sung; Ka, Jae-Won; Kim, Jinsoo; Ahn, Taek; Yi, Mi Hye

    2013-01-21

    The surface property of a polyimide gate insulator was successfully modified with an n-octadecyl side-chain. Alkyl chain-grafted poly(amic acid), the polyimide precursor, was synthesized using the diamine comonomer with an alkyl side-chain. By adding a base catalyst to the poly(amic acid) coating solution, the imidization temperature of the spin-coated film could be reduced to 200 °C. The 350 nm-thick polyimide film had a dielectric constant of 3.3 at 10 kHz and a leakage current density of less than 8.7 × 10(-10) A cm(-2), while biased from 0 to 100 V. To investigate the potential of the alkyl chain-grafted polyimide film as a gate insulator for solution-processed organic thin-film transistors (TFTs), we fabricated C(10)-BTBT TFTs. C(10)-BTBT was deposited on the alkyl chain-grafted polyimide gate insulator by spin-coating, forming a well-ordered crystal structure. The field-effect mobility and the on/off current ratio of the TFT device were measured to be 0.20-0.56 cm(2) V(-1) s(-1) and >10(5), respectively.

  10. Electrical insulator requirements for mirror fusion reactors

    International Nuclear Information System (INIS)

    Condit, R.H.; Van Konynenburg, R.A.

    1977-01-01

    The requirements for mirror fusion electrical insulators are discussed. Insulators will be required at the neutral beam injectors, injector power supplies, direct converters, and superconducting magnets. Insulators placed at the neutral beam injectors will receive the greatest radiation exposure, 10 14 to 10 16 neutrons/m 2 .s and 0.3 to 3 Gy/s (10 5 to 10 6 R/h) of gamma rays, with shielding. Direct converter insulators may receive the highest temperature (up to 1300 0 K), but low voltage holding requirements. Insulators made from organic materials (e.g., plastics) for the magnet coils may be satisfactory. Immediate conductivity increases of all insulators result from gamma irradiation. With an upper limit to gamma flux exposures of 300 Gy/s in a minimally shielded region, the conductivity could reach 10 -6 S/m. Damage from neutron irradiation may not be serious during several years' exposure. Surface changes in ceramics at the neutral beam injector may be serious. The interior of the injector will contain atomic hydrogen, and sputtering may transfer material away from or onto the ceramic insulators. Unknown and potentially damaging interactions between irradiation, electric fields, temperature gradients, cycling of temperature, surface and joint reactions, sputtering, polarization, and electrotransport in the dielectrics are of concern. Materials research to deal with these problems is needed

  11. Vacuum-insulated catalytic converter

    Science.gov (United States)

    Benson, David K.

    2001-01-01

    A catalytic converter has an inner canister that contains catalyst-coated substrates and an outer canister that encloses an annular, variable vacuum insulation chamber surrounding the inner canister. An annular tank containing phase-change material for heat storage and release is positioned in the variable vacuum insulation chamber a distance spaced part from the inner canister. A reversible hydrogen getter in the variable vacuum insulation chamber, preferably on a surface of the heat storage tank, releases hydrogen into the variable vacuum insulation chamber to conduct heat when the phase-change material is hot and absorbs the hydrogen to limit heat transfer to radiation when the phase-change material is cool. A porous zeolite trap in the inner canister absorbs and retains hydrocarbons from the exhaust gases when the catalyst-coated substrates and zeolite trap are cold and releases the hydrocarbons for reaction on the catalyst-coated substrate when the zeolite trap and catalyst-coated substrate get hot.

  12. Panels of microporous insulation

    Energy Technology Data Exchange (ETDEWEB)

    McWilliams, J.A.; Morgan, D.E.; Jackson, J.D.J.

    1990-08-07

    Microporous thermal insulation materials have a lattice structure in which the average interstitial dimension is less than the mean free path of the molecules of air or other gas in which the material is arranged. This results in a heat flow which is less than that attributable to the molecular heat diffusion of the gas. According to this invention, a method is provided for manufacturing panels of microporous thermal insulation, in particular such panels in which the insulation material is bonded to a substrate. The method comprises the steps of applying a film of polyvinyl acetate emulsion to a non-porous substrate, and compacting powdery microporous thermal insulation material against the film so as to cause the consolidated insulation material to bond to the substrate and form a panel. The polyvinyl acetate may be applied by brushing or spraying, and is preferably allowed to dry prior to compacting the insulation material. 1 fig.

  13. Determination of the dew point and the frost point below 0 degrees C making use of the beta-ray backscattering and the electric conductivity on the narrow surface of insulated layer.

    Science.gov (United States)

    Matsumoto, S; Kobayashi, H

    1979-10-15

    It is necessary to distinguish between the dew point and the frost point below 0 degrees C. The freezing of the dew and the melting of the frost are respectively detected by the rapid decrease and the increase of the conduction current on the narrow surface of insulated layer made of epoxy, 0.5 mm in width and 10 mm in length, on which the dew deposits. The dew point -9 degrees C and the frost point -8 degrees C in the humidity 21% at the temperature 13 degrees C are clearly distinguished in this method.

  14. Heat transfer through the flat surface of Rutherford superconducting cable samples with novel pattern of electrical insulation immersed in He II

    Science.gov (United States)

    Strychalski, M.; Chorowski, M.; Polinski, J.

    2014-05-01

    Future accelerator magnets will be exposed to heat loads that exceed even by an order of magnitude presently observed heat fluxes transferred to superconducting magnet coils. To avoid the resistive transition of the superconducting cables, the efficiency of heat transfer between the magnet structure and the helium must be significantly increased. This can be achieved through the use of novel concepts of the cable’s electrical insulation wrapping, characterized by an enhanced permeability to helium while retaining sufficient electrical resistivity. This paper presents measurement results of the heat transfer through Rutherford NbTi cable samples immersed in a He II bath and subjected to the pressure loads simulating the counteracting of the Lorentz forces observed in powered magnets. The Rutherford cable samples that were tested used different electrical insulation wrapping schemes, including the scheme that is presently used and the proposed scheme for future LHC magnets. A new porous polyimide cable insulation with enhanced helium permeability was proposed in order to improve the evacuation of heat form the NbTi coil to He II bath. These tests were performed in a dedicated Claudet-type cryostat in pressurized He II at 1.9 K and 1 bar.

  15. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  16. Development and preliminary experimental study on micro-stacked insulator

    International Nuclear Information System (INIS)

    Ren Chengyan; Yuan Weiqun; Zhang Dongdong; Yan Ping; Wang Jue

    2009-01-01

    High gradient insulating technology is one of the key technologies in new type dielectric wall accelerator(DWA). High gradient insulator, namely micro-stacked insulator, was developed and preliminary experimental study was done. Based on the finite element and particle simulating method, surface electric field distribution and electron movement track of micro-stacked insulator were numerated, and then the optimized design proposal was put forward. Using high temperature laminated method, we developed micro-stacked insulator samples which uses exhaustive fluorinated ethylene propylene(FEP) as dielectric layer and stainless steel as metal layer. Preliminary experiment of vacuum surface flashover in nanosecond pulse voltage was done and micro-stacked insulator exhibited favorable vacuum surface flashover performance with flashover field strength of near 180 kV/cm. (authors)

  17. The Wick-Concept for Thermal Insulation of Cold Piping

    DEFF Research Database (Denmark)

    Koverdynsky, Vit; Korsgaard, Vagn; Rode, Carsten

    2006-01-01

    the wick-concept in either of two variations: the self-drying or the self-sealing system. Experiments have been carried out using different variations of the two systems to investigate the conditions for exploiting the drying capabilities of the systems, and the results are presented. The results show......The wick-concept for thermal insulation of cold piping is based on capillary suction of a fiber fabric to remove excess water from the pipe surface by transporting it to the outer surface of the insulation. From the surface of the insulation jacket, the water will evaporate to the ambient air....... This will prevent long-term accumulation of moisture in the insulation material. The wick keeps the hydrophobic insulation dry, allowing it to maintain its thermal performance. The liquid moisture is kept only in the wick fabric. This article presents the principle of operation of cold pipe insulation using...

  18. On metal-insulator transition in cubic fullerides

    Science.gov (United States)

    Iwahara, Naoya; Chibotaru, Liviu

    The interplay between degenerate orbital and electron correlation is a key to characterize the electronic phases in, for example, transition metal compounds and alkali-doped fullerides. Besides, the degenerate orbital couples to spin and lattice degrees of freedom ,giving rise to exotic phenomena. Here, we develop the self-consistent Gutzwiller approach for the simultaneous treatment of the Jahn-Teller effect and electron correlation, and apply the methodology to reveal the nature of the ground electronic state of fullerides. For small Coulomb repulsion on site U, the fulleride is quasi degenerate correlated metal. With increase of U, we found the quantum phase transition from the metallic phase to JT split phase. In the latter, the Mott transition (MT) mainly develops in the half-filled subband, whereas the empty and the completely filled subbands are almost uninvolved. Therefore, we can qualify the metal-insulator transition in fullerides as an orbital selective MT induced by JT effect.

  19. Interaction effects and quantum phase transitions in topological insulators

    International Nuclear Information System (INIS)

    Varney, Christopher N.; Sun Kai; Galitski, Victor; Rigol, Marcos

    2010-01-01

    We study strong correlation effects in topological insulators via the Lanczos algorithm, which we utilize to calculate the exact many-particle ground-state wave function and its topological properties. We analyze the simple, noninteracting Haldane model on a honeycomb lattice with known topological properties and demonstrate that these properties are already evident in small clusters. Next, we consider interacting fermions by introducing repulsive nearest-neighbor interactions. A first-order quantum phase transition was discovered at finite interaction strength between the topological band insulator and a topologically trivial Mott insulating phase by use of the fidelity metric and the charge-density-wave structure factor. We construct the phase diagram at T=0 as a function of the interaction strength and the complex phase for the next-nearest-neighbor hoppings. Finally, we consider the Haldane model with interacting hard-core bosons, where no evidence for a topological phase is observed. An important general conclusion of our work is that despite the intrinsic nonlocality of topological phases their key topological properties manifest themselves already in small systems and therefore can be studied numerically via exact diagonalization and observed experimentally, e.g., with trapped ions and cold atoms in optical lattices.

  20. Translucent insulating building envelope

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1997-01-01

    A new type of translucent insulating material has been tested. This material is made of Celulose-Acetat and have a honey-comb structure. The material has a high solar transmittance and is highly insulating. The material is relatively cheap to produce. Danish Title: Translucent isolerende klimaskærm....

  1. Sound Insulation between Dwellings

    DEFF Research Database (Denmark)

    Rasmussen, Birgit

    2011-01-01

    Regulatory sound insulation requirements for dwellings exist in more than 30 countries in Europe. In some countries, requirements have existed since the 1950s. Findings from comparative studies show that sound insulation descriptors and requirements represent a high degree of diversity...... and initiate – where needed – improvement of sound insulation of new and existing dwellings in Europe to the benefit of the inhabitants and the society. A European COST Action TU0901 "Integrating and Harmonizing Sound Insulation Aspects in Sustainable Urban Housing Constructions", has been established and runs...... 2009-2013. The main objectives of TU0901 are to prepare proposals for harmonized sound insulation descriptors and for a European sound classification scheme with a number of quality classes for dwellings. Findings from the studies provide input for the discussions in COST TU0901. Data collected from 24...

  2. Electrical breakdown studies with Mycalex insulators

    International Nuclear Information System (INIS)

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-01-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures

  3. Emergent Chiral Spin State in the Mott Phase of a Bosonic Kane-Mele-Hubbard Model

    Science.gov (United States)

    Plekhanov, Kirill; Vasić, Ivana; Petrescu, Alexandru; Nirwan, Rajbir; Roux, Guillaume; Hofstetter, Walter; Le Hur, Karyn

    2018-04-01

    Recently, the frustrated X Y model for spins 1 /2 on the honeycomb lattice has attracted a lot of attention in relation with the possibility to realize a chiral spin liquid state. This model is relevant to the physics of some quantum magnets. Using the flexibility of ultracold atom setups, we propose an alternative way to realize this model through the Mott regime of the bosonic Kane-Mele-Hubbard model. The phase diagram of this model is derived using bosonic dynamical mean-field theory. Focusing on the Mott phase, we investigate its magnetic properties as a function of frustration. We do find an emergent chiral spin state in the intermediate frustration regime. Using exact diagonalization we study more closely the physics of the effective frustrated X Y model and the properties of the chiral spin state. This gapped phase displays a chiral order, breaking time-reversal and parity symmetry, but is not topologically ordered (the Chern number is zero).

  4. Extension of the radiative lifetime of Wannier-Mott excitons in semiconductor nanoclusters

    International Nuclear Information System (INIS)

    Kukushkin, V. A.

    2015-01-01

    The purpose of the study is to calculate the radiative lifetime of Wannier-Mott excitons in three-dimensional potential wells formed of direct-gap narrow-gap semiconductor nanoclusters in wide-gap semiconductors and assumed to be large compared to the exciton radius. Calculations are carried out for the InAs/GaAs heterosystem. It is shown that, as the nanocluster dimensions are reduced to values on the order of the exciton radius, the exciton radiative lifetime becomes several times longer compared to that in a homogeneous semiconductor. The increase in the radiative lifetime is more pronounced at low temperatures. Thus, it is established that the placement of Wannier-Mott excitons into direct-gap semiconductor nanoclusters, whose dimensions are of the order of the exciton radius, can be used for considerable extension of the exciton radiative lifetime

  5. Real-space visualization of remnant Mott gap and magnon excitations.

    Science.gov (United States)

    Wang, Y; Jia, C J; Moritz, B; Devereaux, T P

    2014-04-18

    We demonstrate the ability to visualize real-space dynamics of charge gap and magnon excitations in the Mott phase of the single-band Hubbard model and the remnants of these excitations with hole or electron doping. At short times, the character of magnetic and charge excitations is maintained even for large doping away from the Mott and antiferromagnetic phases. Doping influences both the real-space patterns and long timescales of these excitations with a clear carrier asymmetry attributable to particle-hole symmetry breaking in the underlying model. Further, a rapidly oscillating charge-density-wave-like pattern weakens, but persists as a visible demonstration of a subleading instability at half-filling which remains upon doping. The results offer an approach to analyzing the behavior of systems where momentum space is either inaccessible or poorly defined.

  6. Planar Nernst effect and Mott relation in (In,Fe)Sb ferromagnetic semiconductor

    Science.gov (United States)

    Bui, Cong Tinh; Garcia, Christina A. C.; Tu, Nguyen Thanh; Tanaka, Masaaki; Hai, Pham Nam

    2018-05-01

    Transverse magneto-thermoelectric effects were studied in an (In,Fe)Sb ferromagnetic semiconductor thin film under an in-plane magnetic field. We find that the thermal voltage is governed by the planar Nernst effect. We show that the magnetic field intensity dependence, magnetic field direction dependence, and temperature dependence of the transverse Seebeck coefficient can be explained by assuming a Mott relation between the in-plane magneto-transport and magneto-thermoelectric phenomena in (In,Fe)Sb.

  7. Ellen N. La Motte: the making of a nurse, writer, and activist.

    Science.gov (United States)

    Williams, Lea M

    2015-01-01

    This article examines the early career of Ellen N. La Motte (1873-1961) to trace how her training at the Johns Hopkins Training School for Nurses and years spent as a tuberculosis nurse in Baltimore shaped her perception of tuberculosis prevention and women's suffrage. Although studies of tuberculosis have frequently alluded to her work, no sustained biocritical discussion of her development as a nurse and scholar exists. Between 1902, when she graduated from nursing school, and 1914, the start of the Great War, La Motte published a textbook and dozens of articles in journals devoted to nursing and social reform and delivered many speeches at local, regional, and national meetings. In addition, as her reputation as an expert in the field of tuberculosis nursing grew, her advocacy for the vote for women increased, and she used her writing and speaking skills on behalf of the suffrage cause. This article assesses how the skills La Motte acquired during these years helped mold her into a successful and respected nurse, writer, and activist.

  8. MHD pressure drop of imperfect insulation of liquid metal flow

    International Nuclear Information System (INIS)

    Horiike, H.; Nishiura, R.; Inoue, S.; Miyazaki, K.

    2000-01-01

    An experiment was performed to study magnetohydrodynamic (MHD) pressure gradient in the case of an imperfect electric insulation coating when using NaK loop. Test channels with uniform defects in their coating were made by painting inner surface with acrylic lacquer insulation. It was found that the exponent to B -- which is 1 for insulated walls, and 2 for conducting ones, was very sensitive to crack fractions lower than 25%. The pressure gradient was found to increase almost linearly with the fraction

  9. Molecular dewetting on insulators

    International Nuclear Information System (INIS)

    Burke, S A; Topple, J M; Gruetter, P

    2009-01-01

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C 60 on alkali halides, and the technologically important system of pentacene on SiO 2 . These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure. (topical review)

  10. Molecular dewetting on insulators.

    Science.gov (United States)

    Burke, S A; Topple, J M; Grütter, P

    2009-10-21

    Recent attention given to the growth and morphology of organic thin films with regard to organic electronics has led to the observation of dewetting (a transition from layer(s) to islands) of molecular deposits in many of these systems. Dewetting is a much studied phenomenon in the formation of polymer and liquid films, but its observation in thin films of the 'small' molecules typical of organic electronics requires additional consideration of the structure of the interface between the molecular film and the substrate. This review covers some key concepts related to dewetting and molecular film growth. In particular, the origins of different growth modes and the thickness dependent interactions which give rise to dewetting are discussed in terms of surface energies and the disjoining pressure. Characteristics of molecular systems which may lead to these conditions, including the formation of metastable interface structures and commensurate-incommensurate phase transitions, are also discussed. Brief descriptions of some experimental techniques which have been used to study molecular dewetting are given as well. Examples of molecule-on-insulator systems which undergo dewetting are described in some detail, specifically perylene derivatives on alkali halides, C(60) on alkali halides, and the technologically important system of pentacene on SiO(2). These examples point to some possible predicting factors for the occurrence of dewetting, most importantly the formation of an interface layer which differs from the bulk crystal structure.

  11. Heat insulation support device

    International Nuclear Information System (INIS)

    Takahashi, Hiroyuki; Koda, Tomokazu; Motojima, Osamu; Yamamoto, Junya.

    1994-01-01

    The device of the present invention comprises a plurality of heat insulation legs disposed in a circumferential direction. Each of the heat insulative support legs has a hollow shape, and comprises an outer column and an inner column as support structures having a heat insulative property (heat insulative structure), and a thermal anchor which absorbs compulsory displacement by a thin flat plate (displacement absorber). The outer column, the thermal anchor and the inner column are connected by a support so as to offset the positional change of objects to be supported due to shrinkage when they are shrunk. In addition, the portion between the superconductive coils as the objects to be supported and the inner column is connected by the support. The superconductive thermonuclear device is entirely contained in a heat insulative vacuum vessel, and the heat insulative support legs are disposed on a lower lid of the heat insulative vacuum vessel. With such a constitution, they are strengthened against lateral load and buckling, thereby enabling to reduce the amount of heat intrusion while keeping the compulsory displacement easy to be absorbed. (I.N.)

  12. Vacuum foil insulation system

    International Nuclear Information System (INIS)

    Hanson, J.P.; Sabolcik, R.E.; Svedberg, R.C.

    1976-01-01

    In a multifoil thermal insulation package having a plurality of concentric cylindrical cups, means are provided for reducing heat loss from the penetration region which extends through the cups. At least one cup includes an integral skirt extending from one end of the cup to intersection with the penetration means. Assembly of the insulation package with the skirted cup is facilitated by splitting the cup to allow it to be opened up and fitted around the other cups during assembly. The insulation is for an implantable nuclear powered artificial heart

  13. Proximity effects in topological insulator heterostructures

    International Nuclear Information System (INIS)

    Li Xiao-Guang; Wu Guang-Fen; Zhang Gu-Feng; Culcer Dimitrie; Zhang Zhen-Yu; Chen Hua

    2013-01-01

    Topological insulators (TIs) are bulk insulators that possess robust helical conducting states along their interfaces with conventional insulators. A tremendous research effort has recently been devoted to Tl-based heterostructures, in which conventional proximity effects give rise to a series of exotic physical phenomena. This paper reviews our recent studies on the potential existence of topological proximity effects at the interface between a topological insulator and a normal insulator or other topologically trivial systems. Using first-principles approaches, we have realized the tunability of the vertical location of the topological helical state via intriguing dual-proximity effects. To further elucidate the control parameters of this effect, we have used the graphene-based heterostructures as prototypical systems to reveal a more complete phase diagram. On the application side of the topological helical states, we have presented a catalysis example, where the topological helical state plays an essential role in facilitating surface reactions by serving as an effective electron bath. These discoveries lay the foundation for accurate manipulation of the real space properties of the topological helical state in TI-based heterostructures and pave the way for realization of the salient functionality of topological insulators in future device applications. (topical review - low-dimensional nanostructures and devices)

  14. arXiv Gauge Topological Nature of the Superconductor-Insulator Transition

    CERN Document Server

    Diamantini, M.C.; Lukyanchuk, I.; Vinokur, V.M.

    It has long been believed that, at absolute zero, electrons can form only one quantum coherent state, a superconductor. Yet, several two dimensional superconducting systems were found to harbor the superinsulating state with infinite resistance, a mirror image of superconductivity, and a metallic state often referred to as Bose metal, characterized by finite longitudinal and vanishing Hall resistances. The nature of these novel and mysterious quantum coherent states is the subject of intense study.Here, we propose a topological gauge description of the superconductor-insulator transition (SIT) that enables us to identify the underlying mechanism of superinsulation as Polyakov's linear confinement of Cooper pairs via instantons. We find a criterion defining conditions for either a direct SIT or for the SIT via the intermediate Bose metal and demonstrate that this Bose metal phase is a Mott topological insulator in which the Cooper pair-vortex liquid is frozen by Aharonov-Bohm interactions.

  15. Cooper Pairs in Insulators?

    International Nuclear Information System (INIS)

    Valles, James

    2008-01-01

    Nearly 50 years elapsed between the discovery of superconductivity and the emergence of the microscopic theory describing this zero resistance state. The explanation required a novel phase of matter in which conduction electrons joined in weakly bound pairs and condensed with other pairs into a single quantum state. Surprisingly, this Cooper pair formation has also been invoked to account for recently uncovered high-resistance or insulating phases of matter. To address this possibility, we have used nanotechnology to create an insulating system that we can probe directly for Cooper pairs. I will present the evidence that Cooper pairs exist and dominate the electrical transport in these insulators and I will discuss how these findings provide new insight into superconductor to insulator quantum phase transitions.

  16. Gas insulated substations

    CERN Document Server

    2014-01-01

    This book provides an overview on the particular development steps of gas insulated high-voltage switchgear, and is based on the information given with the editor's tutorial. The theory is kept low only as much as it is needed to understand gas insulated technology, with the main focus of the book being on delivering practical application knowledge. It discusses some introductory and advanced aspects in the meaning of applications. The start of the book presents the theory of Gas Insulated Technology, and outlines reliability, design, safety, grounding and bonding, and factors for choosing GIS. The third chapter presents the technology, covering the following in detail: manufacturing, specification, instrument transformers, Gas Insulated Bus, and the assembly process. Next, the book goes into control and monitoring, which covers local control cabinet, bay controller, control schemes, and digital communication. Testing is explained in the middle of the book before installation and energization. Importantly, ...

  17. Wrapped Multilayer Insulation

    Science.gov (United States)

    Dye, Scott A.

    2015-01-01

    New NASA vehicles, such as Earth Departure Stage (EDS), Orion, landers, and orbiting fuel depots, need improved cryogenic propellant transfer and storage for long-duration missions. Current cryogen feed line multilayer insulation (MLI) performance is 10 times worse per area than tank MLI insulation. During each launch, cryogenic piping loses approximately 150,000 gallons (equivalent to $300,000) in boil-off during transfer, chill down, and ground hold. Quest Product Development Corp., teaming with Ball Aerospace, developed an innovative advanced insulation system, Wrapped MLI (wMLI), to provide improved thermal insulation for cryogenic feed lines. wMLI is high-performance multilayer insulation designed for cryogenic piping. It uses Quest's innovative discrete-spacer technology to control layer spacing/ density and reduce heat leak. The Phase I project successfully designed, built, and tested a wMLI prototype with a measured heat leak 3.6X lower than spiral-wrapped conventional MLI widely used for piping insulation. A wMLI prototype had a heat leak of 7.3 W/m2, or 27 percent of the heat leak of conventional MLI (26.7 W/m2). The Phase II project is further developing wMLI technology with custom, molded polymer spacers and advancing the product toward commercialization via a rigorous testing program, including developing advanced vacuuminsulated pipe for ground support equipment.

  18. Analysis and comparison of magnetic sheet insulation tests

    Science.gov (United States)

    Marion-Péra, M. C.; Kedous-Lebouc, A.; Cornut, B.; Brissonneau, P.

    1994-05-01

    Magnetic circuits of electrical machines are divided into coated sheets in order to limit eddy currents. The surface insulation resistance of magnetic sheets is difficult to evaluate because it depends on parameters like pressure and covers a wide range of values. Two methods of measuring insulation resistance are analyzed: the standardized 'Franklin device' and a tester developed by British Steel Electrical. Their main drawback is poor local repeatability. The Franklin method allows better quality control of industrial process because it measures only one insulating layer at a time. It also gives more accurate images of the distribution of possible defects. Nevertheless, both methods lead to similar classifications of insulation efficiency.

  19. Thermal insulation coating based on water-based polymer dispersion

    Directory of Open Access Journals (Sweden)

    Panchenko Iuliia

    2018-01-01

    Full Text Available For Russia, due to its long winter period, improvement of thermal insulation properties of envelope structures by applying thermal insulation paint and varnish coating to its inner surface is considered perspective. Thermal insulation properties of such coatings are provided by adding aluminosilicate microspheres and aluminum pigment to their composition. This study was focused on defining the effect of hollow aluminosilicate microspheres and aluminum pigment on the paint thermal insulation coating based on water-based polymer dispersion and on its optimum filling ratio. The optimum filling ratio was determined using the method of critical pigment volume concentration (CPVC. The optimum filling ratio was found equal to 55%.

  20. Universal Quantum Criticality in the Metal-Insulator Transition of Two-Dimensional Interacting Dirac Electrons

    Directory of Open Access Journals (Sweden)

    Yuichi Otsuka

    2016-03-01

    Full Text Available The metal-insulator transition has been a subject of intense research since Mott first proposed that the metallic behavior of interacting electrons could turn to an insulating one as electron correlations increase. Here, we consider electrons with massless Dirac-like dispersion in two spatial dimensions, described by the Hubbard models on two geometrically different lattices, and perform numerically exact calculations on unprecedentedly large systems that, combined with a careful finite-size scaling analysis, allow us to explore the quantum critical behavior in the vicinity of the interaction-driven metal-insulator transition. Thereby, we find that the transition is continuous, and we determine the quantum criticality for the corresponding universality class, which is described in the continuous limit by the Gross-Neveu model, a model extensively studied in quantum field theory. Furthermore, we discuss a fluctuation-driven scenario for the metal-insulator transition in the interacting Dirac electrons: The metal-insulator transition is triggered only by the vanishing of the quasiparticle weight, not by the Dirac Fermi velocity, which instead remains finite near the transition. This important feature cannot be captured by a simple mean-field or Gutzwiller-type approximate picture but is rather consistent with the low-energy behavior of the Gross-Neveu model.

  1. Electrical machining method of insulating ceramics

    International Nuclear Information System (INIS)

    Fukuzawa, Y.; Mohri, N.; Tani, T.

    1999-01-01

    This paper describes a new electrical discharge machining method for insulating ceramics using an assisting electrode with either a sinking electrical discharge machine or a wire electrical discharge machine. In this method, the metal sheet or mesh is attached to the ceramic surface as an assisting material for the discharge generation around the insulator surface. When the machining condition changes from the attached material to the workpiece, a cracked carbon layer is formed on the workpiece surface. As this layer has an electrical conductivity, electrical discharge occurs in working oil between the tool electrode and the surface of the workpiece. The carbon is formed from the working oil during this electrical discharge. Even after the material is machined, an electrical discharge occurs in the gap region between the tool electrode and the ceramic because an electrically conductive layer is generated continuously. Insulating ceramics can be machined by the electrical discharge machining method using the above mentioned surface modification phenomenon. In this paper the authors show a machined example demonstrating that the proposed method is available for machining a complex shape on insulating ceramics. Copyright (1999) AD-TECH - International Foundation for the Advancement of Technology Ltd

  2. Heat resistance insulation for NPP pipelines and components

    International Nuclear Information System (INIS)

    Yurchenko, V.G.; Nazarova, G.A.; Popov, A.M.; Matveeva, N.F.

    1986-01-01

    To insulate hot surfaces of NPP process equipment and pipes it is suggested to use heat resistant insulation of foam aminoimides (FAI). Relative toxicity of aceton and acetaldehyd evolved from FAI in the process of thermal and thermal-oxidative break-down was determined. FAI can be used at 200 deg C

  3. Exploring the doping dependence of the Mott transition on X-ray irradiated crystals of {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl

    Energy Technology Data Exchange (ETDEWEB)

    Koehler, Sebastian; Tutsch, Ulrich; Naji, Ammar; Lang, Michael [Physikalisches Institut, Goethe-Universitaet Frankfurt (Germany); Sasaki, Takahiko [Institute for Materials Research, Tohoku University, Aoba-ku, Sendai, Miyagi (Japan)

    2011-07-01

    The quasi two-dimensional organic charge-transfer salt {kappa}-(ET){sub 2}Cu[N(CN){sub 2}]Cl exhibits a rich pressure vs. temperature phase diagram, including Mott-insulating and metallic phases separated by a first order transition line. By applying moderate pressures of {proportional_to}30 MPa (300 bar), the ratio of the kinetic energy to the onsite Coulomb repulsion t/U can be changed sufficiently to cross this phase transition line. Our objective is to study the effect of carrier doping and the accompanying changes of the first-order transition line and its second-order critical endpoint. We used X-ray irradiation to introduce charge carriers into the material, doping it away from half filling. We present resistivity data for the temperature range 5 K

  4. Detection of UV Pulse from Insulators and Application in Estimating the Conditions of Insulators

    Science.gov (United States)

    Wang, Jingang; Chong, Junlong; Yang, Jie

    2014-10-01

    Solar radiation in the band of 240-280 nm is absorbed by the ozone layer in the atmosphere, and corona discharges from high-voltage apparatus emit in air mainly in the 230-405 nm range of ultraviolet (UV), so the band of 240-280 nm is called UV Solar Blind Band. When the insulators in a string deteriorate or are contaminated, the voltage distribution along the string will change, which causes the electric fields in the vicinity of insulators change and corona discharge intensifies. An UV pulse detection method to check the conditions of insulators is presented based on detecting the UV pulse among the corona discharge, then it can be confirmed that whether there exist faulty insulators and whether the surface contamination of insulators is severe for the safe operation of power systems. An UV-I Insulator Detector has been developed, and both laboratory tests and field tests have been carried out which demonstrates the practical viability of UV-I Insulator Detector for online monitoring.

  5. Survey of thermal insulation systems

    International Nuclear Information System (INIS)

    Kinoshita, Izumi

    1983-01-01

    Better thermal insulations have been developed to meet the growing demands of industry, and studies on thermal insulation at both high temperature and low temperature have been widely performed. The purpose of this survey is to summarize data on the performances and characteristics of thermal insulation materials and thermal insulation structures (for instance, gas cooled reactors, space vehicles and LNG storage tanks), and to discuss ravious problems regarding the design of thermal insulation structures of pool-type LMFBRs. (author)

  6. On the interplay of Jahn-Teller physics and Mott physics in cuprates

    International Nuclear Information System (INIS)

    Kamimura, H; Ushio, H

    2008-01-01

    The extended two-story house model which is now called the Kamimura-Suwa (K-S) model has clarified how the interplay of Mott physics and Jahn-Teller physics plays an important role in determining the superconducting as well as metallic state of underdoped cuprates. In this paper it is first pointed out for underdoped cuprates that Mott physics leads to the existence of local antiferromagnetic order constructed from the localized spins while that the anti-Jahn-Teller effect as a central issue of Jahn-Teller physics leads to the existence of two kinds of orbitals parallel and perpendicular to a CuO 2 plane whose states have nearly the same energy. As a result of the interplay of both physics the K-S model has shown that the exchange interactions between the spins of a localized hole and of a carrier hole play an important role in producing the coexistence of superconductivity and antiferromagnetism in underdoped cuprates. The appearance of d-wave superconductivity even in the phonon-involved mechanism is also shown to be due to the interplay of Jahn-Teller physics and Mott Physics. Brief review of these facts as well as the K-S model is given in this paper. More outstanding result in this paper is that the origin of pseudogap in the deeply underdoped regime has been clarified. In this paper it is shown theoretically for the first time that the so-called T* pseudogap observed in ARPES, STM and tunneling experiments below T c in underdoped cuprates corresponds to the real transition of photo-excited electrons from the occupied states in the originally conduction band below the superconducting gap to a free-electron state above the vacuum level. Thus we conclude that the T* pseudogap in the underdoped cuprates which increases with decreasing the hole concentration is not 'pseudo', but a real gap which exists even below T c

  7. Polymer-Reinforced, Non-Brittle, Lightweight Cryogenic Insulation

    Science.gov (United States)

    Hess, David M.

    2013-01-01

    The primary application for cryogenic insulating foams will be fuel tank applications for fueling systems. It is crucial for this insulation to be incorporated into systems that survive vacuum and terrestrial environments. It is hypothesized that by forming an open-cell silica-reinforced polymer structure, the foam structures will exhibit the necessary strength to maintain shape. This will, in turn, maintain the insulating capabilities of the foam insulation. Besides mechanical stability in the form of crush resistance, it is important for these insulating materials to exhibit water penetration resistance. Hydrocarbon-terminated foam surfaces were implemented to impart hydrophobic functionality that apparently limits moisture penetration through the foam. During the freezing process, water accumulates on the surfaces of the foams. However, when hydrocarbon-terminated surfaces are present, water apparently beads and forms crystals, leading to less apparent accumulation. The object of this work is to develop inexpensive structural cryogenic insulation foam that has increased impact resistance for launch and ground-based cryogenic systems. Two parallel approaches will be pursued: a silica-polymer co-foaming technique and a post foam coating technique. Insulation characteristics, flexibility, and water uptake can be fine-tuned through the manipulation of the polyurethane foam scaffold. Silicate coatings for polyurethane foams and aerogel-impregnated polyurethane foams have been developed and tested. A highly porous aerogel-like material may be fabricated using a co-foam and coated foam techniques, and can insulate at liquid temperatures using the composite foam

  8. Critical behavior near the Mott transition in the half-filled asymmetric Hubbard model

    Energy Technology Data Exchange (ETDEWEB)

    Hoang, Anh-Tuan, E-mail: hatuan@iop.vast.ac.vn [Institute of Physics, Vietnam Academy of Science and Technology, Hanoi (Viet Nam); Le, Duc-Anh [Faculty of Physics, Hanoi National University of Education, Xuan Thuy 136, Cau Giay, Hanoi 10000 (Viet Nam)

    2016-03-15

    We study the half-filled asymmetric Hubbard model within the two-site dynamical mean field theory. At zero temperature, explicit expressions of the critical interaction U{sub c} for the Mott transition and the local self-energy are analytically derived. Critical behavior of the quasiparticle weights and the double occupancy are obtained analytically as functions of the on-site interaction U and the hopping asymmetry r. Our results are in good agreement with the ones obtained by much more sophisticated theory.

  9. A Mott polarimeter for the search of time reversal violation in the decay of free neutrons

    International Nuclear Information System (INIS)

    Ban, G.; Beck, M.; Bialek, A.; Bodek, K.; Gorel, P.; Kirch, K.; Kistryn, St.; Kozela, A.; Kuzniak, M.; Lindroth, A.; Naviliat-Cuncic, O.; Pulut, J.; Severijns, N.; Stephan, E.; Zejma, J.

    2006-01-01

    A new polarimeter for low-energy electrons has been built and tested. The device was developed for the measurement of the transverse polarization of beta particles emitted in the decay of polarized cold neutrons. The decay electrons are identified by multi-wire proportional chambers made of low-Z materials and are detected with plastic scintillator hodoscopes. The transverse polarization is analyzed by means of large angle Mott scattering on a thin Pb foil. We describe here the elements of the apparatus and present the results of test measurements which illustrate its performance

  10. A Mott polarimeter for the search of time reversal violation in the decay of free neutrons

    Energy Technology Data Exchange (ETDEWEB)

    Ban, G. [Laboratoire de Physique Corpusculaire, Caen (France); Beck, M. [Catholic University, Leuven (Belgium); Bialek, A. [Institute of Physics, Polish Academy of Sciences, Cracow (Poland); Bodek, K. [Institute of Physics, Jagiellonian University, Cracow (Poland)]. E-mail: ufbodek@if.uj.edu.pl; Gorel, P. [Laboratoire de Physique Corpusculaire, Caen (France); Paul Scherrer Institute, Villigen (Switzerland); Kirch, K. [Paul Scherrer Institute, Villigen (Switzerland); Kistryn, St. [Institute of Physics, Jagiellonian University, Cracow (Poland); Kozela, A. [Institute of Physics, Polish Academy of Sciences, Cracow (Poland); Kuzniak, M. [Institute of Physics, Jagiellonian University, Cracow (Poland); Lindroth, A. [Catholic University, Leuven (Belgium); Naviliat-Cuncic, O. [Laboratoire de Physique Corpusculaire, Caen (France); Pulut, J. [Institute of Physics, Jagiellonian University, Cracow (Poland); Paul Scherrer Institute, Villigen (Switzerland); Catholic University, Leuven (Belgium); Severijns, N. [Catholic University, Leuven (Belgium); Stephan, E. [Institute of Physics, University of Silesia, Katowice (Poland); Zejma, J. [Institute of Physics, Jagiellonian University, Cracow (Poland)

    2006-09-15

    A new polarimeter for low-energy electrons has been built and tested. The device was developed for the measurement of the transverse polarization of beta particles emitted in the decay of polarized cold neutrons. The decay electrons are identified by multi-wire proportional chambers made of low-Z materials and are detected with plastic scintillator hodoscopes. The transverse polarization is analyzed by means of large angle Mott scattering on a thin Pb foil. We describe here the elements of the apparatus and present the results of test measurements which illustrate its performance.

  11. Review and calculation of Mott scattering cross section by unscreened point nuclei

    International Nuclear Information System (INIS)

    Idoeta, R.; Legarda, F.

    1992-01-01

    A new tabulation of the ratio of the ''exact'' Mott cross section for unscreened point nuclei to the classical Rutherford cross section for electrons and positions has been made. Because of the infinite slowly converging series appearing in this ratio we have made two series transformations. With this evaluation the ratio reached convergence within six significant figures after less than a hundred terms and very low computing time. So the ratios evaluated have less relative error than those in the literature and covers a greater range of energy and atomic number. (orig.)

  12. Three-dimensional topological insulators and bosonization

    Energy Technology Data Exchange (ETDEWEB)

    Cappelli, Andrea [INFN, Sezione di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Randellini, Enrico [INFN, Sezione di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Dipartimento di Fisica e Astronomia, Università di Firenze,Via G. Sansone 1, 50019 Sesto Fiorentino - Firenze (Italy); Sisti, Jacopo [Scuola Internazionale Superiore di Studi Avanzati (SISSA),Via Bonomea 265, 34136 Trieste (Italy)

    2017-05-25

    Massless excitations at the surface of three-dimensional time-reversal invariant topological insulators possess both fermionic and bosonic descriptions, originating from band theory and hydrodynamic BF theory, respectively. We analyze the corresponding field theories of the Dirac fermion and compactified boson and compute their partition functions on the three-dimensional torus geometry. We then find some non-dynamic exact properties of bosonization in (2+1) dimensions, regarding fermion parity and spin sectors. Using these results, we extend the Fu-Kane-Mele stability argument to fractional topological insulators in three dimensions.

  13. Post-Insulation of Existing Buildings Constructed Between 1850 and 1920

    DEFF Research Database (Denmark)

    Rasmussen, Torben Valdbjørn

    2010-01-01

    as a result of post-insulation measures. Besides lower heating costs and reduced CO2 emissions, improvement of the insulation standard could contribute to the elimination of other aspects of discomfort, such as draught originating from cold surfaces inside. This paper considers post-insulation of a simulated...

  14. Energy conservation through thermally insulated structures

    International Nuclear Information System (INIS)

    Abu-Dayyeh, Ayoub

    2006-01-01

    The propose of this paper is to explicate its title through investigating the different available thermal insulating materials and the various techniques of application, as practiced in Jordan, in particular, and as practiced in many parts of the world in general, which will satisfy Jordanian standards in terms of heat transmittance and thermal comfort. A brief comparison with international standards will shed some light on the stringent measures enforced in the developed world and on our striving aspirations to keep pace. The paper consists of four main parts, pseudoally divided. The first part will deal with the mechanism of heat loss and heat gain in structures during summer and winter. It will also explain the Time-lag phenomenon which is vital for providing thermal comfort inside the dwellings. The second part will evaluate the damages induced by the temperature gradients on the different elements of the structure, particularly next to exterior opening. The paper will also demonstrate the damages induced by water condensation and fungus growth on the internal surfaces of the structure and within its skeleton. A correlation between condensation and thermal insulation will be established. The third part of the paper will evaluate the different available thermal insulating materials and the application techniques which will satisfy the needs for thermal insulating and thermal comfort at the least cost possible. The criteria of an economical design shall be established. As a conclusion, the paper infers answers to the following different criteria discussed throughout the different parts of the paper. The main theme of questions can be summarized as follows: 1)How energy conservation is possible due to thermal insulation? 2)The feasibility of investing in thermal insulation? 3)Is thermal comfort and a healthy atmosphere possible inside the dwellings during all season! What are the conditions necessary to sustain them? 4)What environmental impacts can exist due to

  15. Thermal insulation. Non-utilized energy need not be generated. Four rules for a successful thermal insulation by means of building insulation; Waermedaemmung. Energie, die nicht gebraucht wird, muss man nicht erzeugen. Vier Regeln fuer erfolgreichen Waermeschutz durch Gebaeudedaemmung

    Energy Technology Data Exchange (ETDEWEB)

    Patschke, Markus [3E-Consult, Nordkirchen (Germany); Drewer, Arnold [IpeG-Institut, Paderborn (Germany)

    2011-07-15

    The heat supply of buildings causes nearly one third of the energy consumption of an industrialized country. In 2006, the climate-adjusted heat consumption of private households in Germany amounted nearly 600 billion kWh. This consumption caused more than 167 million tons of CO{sub 2}. Heat insulation measures in buildings are required for all heat-transferring enveloping surface. Under this aspect, the contribution under consideration reports on four fundamental rules for a cost-efficient building insulation: (a) Only heated rooms should be insulated thermally; (b) Location and thermal insulation of cavities; (c) Selection of a suitable insulating material; (d) Consideration of an economic sustainability.

  16. Insulators for fusion applications

    International Nuclear Information System (INIS)

    1987-04-01

    Design studies for fusion devices and reactors have become more detailed in recent years and with this has come a better understanding of requirements and operating conditions for insulators in these machines. Ceramic and organic insulators are widely used for many components of fusion devices and reactors namely: radio frequency (RF) energy injection systems (BeO, Al 2 O 3 , Mg Al 2 O 4 , Si 3 N 4 ); electrical insulation for the torus structure (SiC, Al 2 O 3 , MgO, Mg Al 2 O 4 , Si 4 Al 2 O 2 N 6 , Si 3 N 4 , Y 2 O 3 ); lightly-shielded magnetic coils (MgO, MgAl 2 O 4 ); the toroidal field coil (epoxies, polyimides), neutron shield (B 4 C, TiH 2 ); high efficiency electrical generation; as well as the generation of very high temperatures for high efficiency hydrogen production processes (ZrO 2 and Al 2 O 3 - mat, graphite and carbon - felt). Timely development of insulators for fusion applications is clearly necessary. Those materials to be used in fusion machines should show high resistance to radiation damage and maintain their structural integrity. Now the need is urgent for a variety of radiation resistant materials, but much effort in these areas is required for insulators to be considered seriously by the design community. This document contains 14 papers from an IAEA meeting. It was the objective of this meeting to identify existing problems in analysing various situations of applications and requirements of electrical insulators and ceramics in fusion and to recommend strategies and different stages of implementation. This meeting was endorsed by the International Fusion Research Council

  17. Electrical insulator assembly with oxygen permeation barrier

    Science.gov (United States)

    Van Der Beck, Roland R.; Bond, James A.

    1994-01-01

    A high-voltage electrical insulator (21) for electrically insulating a thermoelectric module (17) in a spacecraft from a niobium-1% zirconium alloy wall (11) of a heat exchanger (13) filled with liquid lithium (16) while providing good thermal conductivity between the heat exchanger and the thermoelectric module. The insulator (21) has a single crystal alumina layer (SxAl.sub.2 O.sub.3, sapphire) with a niobium foil layer (32) bonded thereto on the surface of the alumina crystal (26) facing the heat exchanger wall (11), and a molybdenum layer (31) bonded to the niobium layer (32) to act as an oxygen permeation barrier to preclude the oxygen depleting effects of the lithium from causing undesirable niobium-aluminum intermetallic layers near the alumina-niobium interface.

  18. Fractal analysis of the electrical discharges' surface paths in polymeric insulation considering different pollution levels; Analisis fractal de las trayectorias de descargas electricas superficiales en aislamiento polimerico considerando diferentes niveles de contaminacion

    Energy Technology Data Exchange (ETDEWEB)

    Palacios Lopez, Arturo

    2002-07-01

    In this thesis tree patterns of superficial breakdown in polymeric insulator of Silicon Rubber are generated. Experimental arrangement rod-rod was used on the basis of norm ASTM D 2303-85. Pollution levels on the basis of norm IEC 507 were also used. The experimental values of Fractal Dimension for each case of pollution were reported. A self similar method called Box Counting for the fractal dimension calculus and for the self affine methods an R/S and Variogram were used. According to the results, it was concluded that the tree patterns of superficial electric breakdown in Silicon Rubber is self similar and its value does not depend on the degree of pollution, that is equivalent to the concentration of salt for liter of water or to the Equivalent Salt Deposition (ESDD), in the surface of an insulator. [Spanish] En el presente trabajo se inducen descargas electricas superficiales en un aislamiento polimerico de Hule Silicon, el arreglo experimental que se utilice es punta-punta con base en la norma ASTM D 2303-85 y los niveles de contaminacion con base en la norma IEC 507. Se reportan los valores experimentales de la Dimension Fractal para cada caso de contaminacion, se utilice el metodo auto similar de conteo de cuadros, para el calculo de la Dimension Fractal y para metodos auto afines se utilice analisis R/S y variograma. Con los resultados obtenidos se concluye que la trayectoria de la descarga electrica superficial en un polimero de Hule Silicon es auto similar y su valor no depende del grado de contaminacion, el cual es equivalente a la concentracion de gramos de sal por litro de agua o a la densidad de sal depositada (DESD), en la superficie de un aislador.

  19. Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi{sub 2}Se{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, Turgut, E-mail: yilmaz@phys.uconn.edu [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Hines, William [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Sun, Fu-Chang [Department of Materials Science and Engineering, University of Connecticut, Storrs, CT 06269 (United States); Pletikosić, Ivo [Department of Physics, Princeton University, Princeton, NJ 08544 (United States); Budnick, Joseph [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States); Valla, Tonica [Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Sinkovic, Boris [Department of Physics, University of Connecticut, Storrs, CT 06269 (United States)

    2017-06-15

    Highlights: • Cr doping into the bulk of Bi{sub 2}Se{sub 3} opens an energy gap at the Dirac point which is observable in the non-magnetic state. • Cr surface deposition does not lead to open an energy gap at the Dirac point of Bi{sub 2}Se{sub 3}. • Formation of two distinct Bi and Cr core level peaks was observed upon the deposition of Cr on the surface of Bi{sub 2}Se{sub 3}. - Abstract: In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi{sub 2}Se{sub 3} films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition. In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.

  20. Infrared circular photogalvanic effect in topological insulators

    Science.gov (United States)

    Luo, Siyuan

    2018-04-01

    Topological insulators have attracted a lot of attention in recent years due to its unique phenomena. Circular photogalvanic effect (CPGE) is one of the important phenomena in topological insulators. Bi2Se3, as one of the 3D topological insulators, consist of a single Dirac cone at the Γ point in k-space [1], corresponding to the surface states. Controlled by the Berry curvature of the surface band, the dominant photo response due to the interband transition is helicity dependent [2]. In addition, due to the spin-momentum locking in topological insulators' surface, the sign of spin-angular-momentum of obliquely incident light and photo currents are locked together. On the other hand, Bi2Se3 consists of quintuple layers which make it possible to be exfoliated and transferred based on graphene fabrication. In this paper, Bi2Se3 devices were fabricated and Ohm contact was achieved. We experimentally demonstrated the CPGE in Bi2Se3 using 1550nm incident laser.

  1. Artificial heart system thermal insulation component development

    International Nuclear Information System (INIS)

    Svedberg, R.C.; Buckman, R.W. Jr.

    1975-01-01

    A concentric cup vacuum multifoil insulation system has been selected by virtue of its size, weight, and thermal performance to insulate the hot radioisotope portion of the thermal converter of an artificial implantable heart system. A factor of 2 improvement in thermal performance, based on the heat loss per number of foil layers (minimum system weight and volume) has been realized over conventional spiral wrapped multifoil vacuum insulation. This improvement is the result of the concentric cup construction to maintain a uniform interfoil spacing and the elimination of corner heat losses. Based on external insulation system dimensions (surface area in contact with host body), heat losses of 0.019 W/ cm 2 at 1140 0 K (1600 0 F) and 0.006 W/cm 2 at 920 0 K (1200 0 F) have been achieved. Factors which influence thermal performance of the nickel foil concentric cup insulation system include the number of cups, configuration and method of application of zirconia (ZrO 2 ) spacer material, system pressure, emittance of the cups, and operating temperature

  2. Spin-torque generation in topological insulator based heterostructures

    KAUST Repository

    Fischer, Mark H.; Vaezi, Abolhassan; Manchon, Aurelien; Kim, Eun-Ah

    2016-01-01

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather

  3. Innovative Retrofit Insulation Strategies for Concrete Masonry Foundations

    Energy Technology Data Exchange (ETDEWEB)

    Huelman, P. [Univ. of Minnesota, St. Paul, MN (United States). NorthernSTAR Building America Partnership; Goldberg, L. [Univ. of Minnesota, St. Paul, MN (United States). NorthernSTAR Building America Partnership; Jacobson, R. [Univ. of Minnesota, St. Paul, MN (United States). NorthernSTAR Building America Partnership

    2015-05-06

    This study was designed to test a new approach for foundation insulation retrofits, with the goal of demonstrating improved moisture control, improved occupant comfort, and reduced heat loss. Because conducting experimental research on existing below-grade assemblies is very difficult, most of the results are based on simulations. The retrofit approach consists of filling open concrete block cores with an insulating material and adding R-10 exterior insulation that extends 1 ft below grade. The core fill is designed to improve the R-value of the foundation wall and increase the interior wall surface temperature, but more importantly to block convection currents that could otherwise increase moisture loads on the foundation wall and interior space. The exterior insulation significantly reduces heat loss through the most exposed part of the foundation and further increases the interior wall surface temperature. This improves occupant comfort and decreases the risk of condensation. Such an insulation package avoids the full-depth excavation necessary for exterior insulation retrofits, reduces costs, and eliminates the moisture and indoor air quality risks associated with interior insulation retrofits. Retrofit costs for the proposed approach were estimated at roughly half those of a full-depth exterior insulation retrofit.

  4. Insulation Reformulation Development

    Science.gov (United States)

    Chapman, Cynthia; Bray, Mark

    2015-01-01

    The current Space Launch System (SLS) internal solid rocket motor insulation, polybenzimidazole acrylonitrile butadiene rubber (PBI-NBR), is a new insulation that replaced asbestos-based insulations found in Space Shuttle heritage solid rocket boosters. PBI-NBR has some outstanding characteristics such as an excellent thermal erosion resistance, low thermal conductivity, and low density. PBI-NBR also has some significant challenges associated with its use: Air entrainment/entrapment during manufacture and lay-up/cure and low mechanical properties such as tensile strength, modulus, and fracture toughness. This technology development attempted to overcome these challenges by testing various reformulated versions of booster insulation. The results suggest the SLS program should continue to investigate material alternatives for potential block upgrades or use an entirely new, more advanced booster. The experimental design was composed of a logic path that performs iterative formulation and testing in order to maximize the effort. A lab mixing baseline was developed and documented for the Rubber Laboratory in Bldg. 4602/Room 1178.

  5. Beyond insulation and isolation

    DEFF Research Database (Denmark)

    Højlund, Marie Koldkjær

    2016-01-01

    are insulation and isolation strategies to reduce measurable and perceptual noise levels. However, these strategies do not actively support the need to feel like an integral part of the shared hospital environment, which is a key element in creating healing environments, according to the paradigm of Evidence-Based...

  6. Self-Healing Wire Insulation

    Science.gov (United States)

    Parrish, Clyde F. (Inventor)

    2012-01-01

    A self-healing system for an insulation material initiates a self-repair process by rupturing a plurality of microcapsules disposed on the insulation material. When the plurality of microcapsules are ruptured, reactants within the plurality of microcapsules react to form a replacement polymer in a break of the insulation material. This self-healing system has the ability to repair multiple breaks in a length of insulation material without exhausting the repair properties of the material.

  7. Integrated Multilayer Insulation

    Science.gov (United States)

    Dye, Scott

    2009-01-01

    Integrated multilayer insulation (IMLI) is being developed as an improved alternative to conventional multilayer insulation (MLI), which is more than 50 years old. A typical conventional MLI blanket comprises between 10 and 120 metallized polymer films separated by polyester nets. MLI is the best thermal- insulation material for use in a vacuum, and is the insulation material of choice for spacecraft and cryogenic systems. However, conventional MLI has several disadvantages: It is difficult or impossible to maintain the desired value of gap distance between the film layers (and consequently, it is difficult or impossible to ensure consistent performance), and fabrication and installation are labor-intensive and difficult. The development of IMLI is intended to overcome these disadvantages to some extent and to offer some additional advantages over conventional MLI. The main difference between IMLI and conventional MLI lies in the method of maintaining the gaps between the film layers. In IMLI, the film layers are separated by what its developers call a micro-molded discrete matrix, which can be loosely characterized as consisting of arrays of highly engineered, small, lightweight, polymer (typically, thermoplastic) frames attached to, and placed between, the film layers. The term "micro-molded" refers to both the smallness of the frames and the fact that they are fabricated in a process that forms precise small features, described below, that are essential to attainment of the desired properties. The term "discrete" refers to the nature of the matrix as consisting of separate frames, in contradistinction to a unitary frame spanning entire volume of an insulation blanket.

  8. The inaccuracy of heat transfer characteristics of insulated and non-insulated circular duct while neglecting the influence of heat radiation

    International Nuclear Information System (INIS)

    Hsien, T.-L.; Wong, K.-L.; Yu, S.-J.

    2009-01-01

    The non-insulated and insulated ducts are commonly applied in the industries and various buildings, because the heat radiation equation contains the 4th order exponential of temperature which is very complicate in calculations. Most heat transfer experts recognized from their own experiences that the heat radiation effect can be ignored due to the small temperature difference between insulated and non-insulated surface and surroundings. This paper studies in detail to check the inaccuracies of heat transfer characteristics non-insulated and insulated duct by comparing the results between considering and neglecting heat radiation effect. It is found that neglecting the heat radiation effect is likely to produce large errors of non-insulated and thin-insulated ducts in situations of ambient air with low external convection heat coefficients and larger surface emissivity, especially while the ambient air temperature is different from that of surroundings and greater internal fluid convection coefficients. It is also found in this paper that using greater duct surface emissivity can greatly improve the heat exchanger effect and using smaller insulated surface emissivity can obtain better insulation.

  9. Tetradymites as thermoelectrics and topological insulators

    Science.gov (United States)

    Heremans, Joseph P.; Cava, Robert J.; Samarth, Nitin

    2017-10-01

    Tetradymites are M2X3 compounds — in which M is a group V metal, usually Bi or Sb, and X is a group VI anion, Te, Se or S — that crystallize in a rhombohedral structure. Bi2Se3, Bi2Te3 and Sb2Te3 are archetypical tetradymites. Other mixtures of M and X elements produce common variants, such as Bi2Te2Se. Because tetradymites are based on heavy p-block elements, strong spin-orbit coupling greatly influences their electronic properties, both on the surface and in the bulk. Their surface electronic states are a cornerstone of frontier work on topological insulators. The bulk energy bands are characterized by small energy gaps, high group velocities, small effective masses and band inversion near the centre of the Brillouin zone. These properties are favourable for high-efficiency thermoelectric materials but make it difficult to obtain an electrically insulating bulk, which is a requirement of topological insulators. This Review outlines recent progress made in bulk and thin-film tetradymite materials for the optimization of their properties both as thermoelectrics and as topological insulators.

  10. Linear particle accelerator with seal structure between electrodes and insulators

    Science.gov (United States)

    Broadhurst, John H.

    1989-01-01

    An electrostatic linear accelerator includes an electrode stack comprised of primary electrodes formed or Kovar and supported by annular glass insulators having the same thermal expansion rate as the electrodes. Each glass insulator is provided with a pair of fused-in Kovar ring inserts which are bonded to the electrodes. Each electrode is designed to define a concavo-convex particle trap so that secondary charged particles generated within the accelerated beam area cannot reach the inner surface of an insulator. Each insulator has a generated inner surface profile which is so configured that the electrical field at this surface contains no significant tangential component. A spark gap trigger assembly is provided, which energizes spark gaps protecting the electrodes affected by over voltage to prevent excessive energy dissipation in the electrode stack.

  11. Correlation among ESDD, NSDD and leakage current in distribution insulators

    International Nuclear Information System (INIS)

    Montoya, G.; Ramirez, I.; Montoya, J.I.

    2004-01-01

    The maintenance of distribution networks is more effective if the insulation contamination levels are known. The selection of measuring methods of pollution levels is then crucial. The relationship between several evaluation methods of pollution levels and the operating behaviour of several insulator profiles in a polluted zone is described. Laboratory tests were carried out to reproduce pollution levels found in the field. The quantity of non-soluble materials deposited over the insulators' surface affect the magnitude of the leakage current generated over a contaminated insulator. The relationship that defines leakage current with respect to the equivalent salt deposit density (ESDD) level for a specific non-soluble material level is almost linear, from which it is possible to develop a relationship between them for each insulator. (author)

  12. Voltage-driven magnetization control in topological insulator/magnetic insulator heterostructures

    Directory of Open Access Journals (Sweden)

    Michael E. Flatté

    2017-05-01

    Full Text Available A major barrier to the development of spin-based electronics is the transition from current-driven spin torque, or magnetic-field-driven magnetization reversal, to a more scalable voltage-driven magnetization reversal. To achieve this, multiferroic materials appear attractive, however the effects in current materials occur at very large voltages or at low temperatures. Here the potential of a new class of hybrid multiferroic materials is described, consisting of a topological insulator adjacent to a magnetic insulator, for which an applied electric field reorients the magnetization. As these materials lack conducting states at the chemical potential in their bulk, no dissipative charge currents flow in the bulk. Surface states at the interface, if present, produce effects similar to surface recombination currents in bipolar devices, but can be passivated using magnetic doping. Even without conducting states at the chemical potential, for a topological insulator there is a finite spin Hall conductivity provided by filled bands below the chemical potential. Spin accumulation at the interface with the magnetic insulator provides a torque on the magnetization. Properly timed voltage pulses can thus reorient the magnetic moment with only the flow of charge current required in the leads to establish the voltage. If the topological insulator is sufficiently thick the resulting low capacitance requires little charge current.

  13. HgTe based topological insulators

    International Nuclear Information System (INIS)

    Bruene, Christoph

    2014-01-01

    This PhD thesis summarizes the discovery of topological insulators and highlights the developments on their experimental observations. The work focuses on HgTe. The thesis is structured as follows: - The first chapter of this thesis will give a brief overview on discoveries in the field of topological insulators. It focuses on works relevant to experimental results presented in the following chapters. This includes a short outline of the early predictions and a summary of important results concerning 2-dimensional topological insulators while the final section discusses observations concerning 3-dimensional topological insulators. - The discovery of the quantum spin Hall effect in HgTe marked the first experimental observation of a topological insulator. Chapter 2 focuses on HgTe quantum wells and the quantum spin Hall effect. The growth of high quality HgTe quantum wells was one of the major goals for this work. In a final set of experiments the spin polarization of the edge channels was investigated. Here, we could make use of the advantage that HgTe quantum well structures exhibit a large Rashba spin orbit splitting. - HgTe as a 3-dimensional topological insulator is presented in chapter 3. - Chapters 4-6 serve as in depth overviews of selected works: Chapter 4 presents a detailed overview on the all electrical detection of the spin Hall effect in HgTe quantum wells. The detection of the spin polarization of the quantum spin Hall effect is shown in chapter 5 and chapter 6 gives a detailed overview on the quantum Hall effect originating from the topological surface state in strained bulk HgTe.

  14. Soft deconfinement — critical phenomena at the Mott transition in a field theory for quarks and mesons

    Science.gov (United States)

    Hüfner, J.; Klevansky, S. P.; Rehberg, P.

    1996-02-01

    Critical phenomena associated with Mott transitions are investigated in the finite temperature SUf(3) Nambu-Jona-Lasinio model, that describes quarks u, d, s and bound mesons π, K. Critical exponents for the behavior close to the Mott temperature TM are determined for the static properties of a pion, such as mπ( T), gπqq( T), fπ( T), π, and the pion polarizabilities αC, N, as well as for the behavior of mK( T), gKqs( T) fK( T) in the strange sector. The effect of the Mott transitions on the q overlineq and ππ scattering lengths and for hadronization cross sections σ q overlineq→ππ (T) is discussed. Divergencies that occur in these quantities at TM indicate an intransparence with respect to hadronic and photonic probes, much like the phenomenon of critical opalescence. Physically, the Mott transition models the deconfinement transition expected of QCD since it corresponds to a delocalizayion of the bound states when the temperature is raised above TM.

  15. Influences of Corrosive Sulfur on Copper Wires and Oil-Paper Insulation in Transformers

    Directory of Open Access Journals (Sweden)

    Jian Li

    2011-10-01

    Full Text Available Oil-impregnated paper is widely used in power transmission equipment as a reliable insulation. However, copper sulphide deposition on oil-paper insulation can lead to insulation failures in power transformers. This paper presents the influences of copper sulfur corrosion and copper sulphide deposition on copper wires and oil-paper insulation in power transformers. Thermal aging tests of paper-wrapped copper wires and bare copper wires in insulating oil were carried out at 130 °C and 150 °C in laboratory. The corrosive characteristics of paper-wrapped copper wires and bare copper wires were analyzed. Dielectric properties of insulation paper and insulating oil were also analyzed at different stages of the thermal aging tests using a broadband dielectric spectrometer. Experiments and analysis results show that copper sulfide deposition on surfaces of copper wires and insulation paper changes the surface structures of copper wires and insulation paper. Copper sulfur corrosion changes the dielectric properties of oil-paper insulation, and the copper sulfide deposition greatly reduces the electrical breakdown strength of oil-paper insulation. Metal passivator is capable of preventing copper wires from sulfur corrosion. The experimental results are helpful for investigations for fault diagnosis of internal insulation in power transformers.

  16. Luminescence from metals and insulators

    International Nuclear Information System (INIS)

    Crawford, O.H.

    1985-01-01

    The term luminescence is normally applied to light emission that is not explainable by the mechanisms discussed by the other speakers in this meeting. Specifically, it is not transition radiation, surface plasmon radiation, or bremsstrahlung. One normally thinks of luminescence as arising from one-electron transitions within a medium. This talk consists of an overview of luminescence from condensed matter under irradiation by either energetic particles or photons. The author begins with organic molecules, where luminescence is best understood, and then discusses inorganic insulators and metals. Finally, the dependence of yield upon projectile species and velocity is discussed, and predictions are made concerning the relative effectiveness of electrons, protons, and hydrogen atoms in exciting luminescence

  17. Aharonov–Bohm interference in topological insulator nanoribbons

    KAUST Repository

    Peng, Hailin

    2009-12-13

    Topological insulators represent unusual phases of quantum matter with an insulating bulk gap and gapless edges or surface states. The two-dimensional topological insulator phase was predicted in HgTe quantum wells and confirmed by transport measurements. Recently, Bi2 Se3 and related materials have been proposed as three-dimensional topological insulators with a single Dirac cone on the surface, protected by time-reversal symmetry. The topological surface states have been observed by angle-resolved photoemission spectroscopy experiments. However, few transport measurements in this context have been reported, presumably owing to the predominance of bulk carriers from crystal defects or thermal excitations. Here we show unambiguous transport evidence of topological surface states through periodic quantum interference effects in layered single-crystalline Bi2 Se3 nanoribbons, which have larger surface-to-volume ratios than bulk materials and can therefore manifest surface effects. Pronounced Aharonov-Bohm oscillations in the magnetoresistance clearly demonstrate the coherent propagation of two-dimensional electrons around the perimeter of the nanoribbon surface, as expected from the topological nature of the surface states. The dominance of the primary h/e oscillation, where h is Plancks constant and e is the electron charge, and its temperature dependence demonstrate the robustness of these states. Our results suggest that topological insulator nanoribbons afford promising materials for future spintronic devices at room temperature.

  18. Heat insulating plates

    Energy Technology Data Exchange (ETDEWEB)

    Allan, J.A.F.

    1976-10-28

    Micro-porous insulation plates are dealt with, for example, how they are used in the insulation of heat storage devices. Since one side of such plates is exposed to a temperature of over 700/sup 0/C, a shrinkage of the glass texture of the covering can occur, which can exceed the shrinkage of the inner micro-porous material, so that cracks and splits in the high temperature side of the covering can come about. The task of the invention is to design the plate in such a way as to prevent this from happening. For this purpose the plate is provided, according to invention specifications, with flutes, waves, ribs, waffle or grid patterns and the covering is set into the recesses originating from this.

  19. Green insulation: hemp fibers

    Energy Technology Data Exchange (ETDEWEB)

    Anon,

    2011-09-15

    Indian hemp (Cannabis indica) is known for its psychotropic values and it is banned in most countries. However, industrial hemp (Cannabis sativa) is known for its tough fibers. Several manufactures in Europe including, small niche players, have been marketing hemp insulation products for several years. Hemp is a low environmental impact material. Neither herbicide nor pesticide is used during the growth of hemp. The fibers are extracted in a waste-free and chemical-free mechanical process. Hemp can consume CO2 during its growth. In addition, hemp fiber can be disposed of harmlessly by composting or incineration at the end of its life. Hemp fibers are processed and treated only minimally to resist rot and fungal activity. There is little health risk when producing and installing the insulation, thanks to the absence of toxic additive. Its thermal resistance is comparable to mineral wool. But the development and marketing of hemp fibers may be restricted in North America.

  20. Compact vacuum insulation embodiments

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1992-04-28

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point' or line' contacts with the metal wall sheets. In the case of monolithic spacers that form line' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included. 26 figs.

  1. Compact vacuum insulation

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1993-01-05

    An ultra-thin compact vacuum insulation panel is comprised of two hard, but bendable metal wall sheets closely spaced apart from each other and welded around the edges to enclose a vacuum chamber. Glass or ceramic spacers hold the wall sheets apart. The spacers can be discrete spherical beads or monolithic sheets of glass or ceramic webs with nodules protruding therefrom to form essentially point'' or line'' contacts with the metal wall sheets. In the case of monolithic spacers that form line'' contacts, two such spacers with the line contacts running perpendicular to each other form effectively point'' contacts at the intersections. Corrugations accommodate bending and expansion, tubular insulated pipes and conduits, and preferred applications are also included.

  2. Insulating materials for optoelectronics

    International Nuclear Information System (INIS)

    Agullo-Lopez, F.

    1990-01-01

    Optoelectronics is an interdisciplinary field. Basic functions of an optoelectronic system include the generator of the optical signal, its transmission and handling and, finally, its detection, storage and display. A large variety of semiconductor and insulating materials are used or are being considered to perform those functions. The authors focus on insulating materials, mostly oxides. For signal generation, tunable solid state lasers, either vibronic or those based oon colour centres are briefly described, and their main operating parameters summarized. Reference is made to some developments on fiber and waveguide lasers. Relevant physical features of the silica fibres used for low-loss, long-band, optical transmission are reviewed, as well as present efforts to further reduce attenuation in the mid-infrared range. Particular attention is paid to photorefractive materials (LiNbO 3 , BGO, BSO, etc.), which are being investigated

  3. Super insulating aerogel glazing

    DEFF Research Database (Denmark)

    Schultz, Jørgen Munthe; Jensen, Karsten Ingerslev; Kristiansen, Finn Harken

    2004-01-01

    form the weakest part of the thermal envelope with respect to heat loss coefficient, but on the other hand also play an important role for passive solar energy utilisation. For window orientations other than south, the net energy balance will be close to or below zero. However, the properties......Monolithic silica aerogel offers the possibility of combining super insulation and high solar energy transmittance, which has been the background for a previous and a current EU project on research and development of monolithic silica aerogel as transparent insulation in windows. Generally, windows...... of aerogel glazing will allow for a positive net energy gain even for north facing vertical windows in a Danish climate during the heating season. This means that high quality daylight can be obtained even with additional energy gain. On behalf of the partners of the two EU projects, results related...

  4. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. The design considerations and methods along with the development tests are presented. Special considerations to guard against adverse cracking of the insulation material, to maintain the clamp-pipe stiffness desired during a seismic event, to minimize clamp restraint on the pipe during normal pipe heatup, and to resist clamp rotation or spinning on the pipe are emphasized

  5. Superconductivity and ferromagnetism in topological insulators

    Science.gov (United States)

    Zhang, Duming

    Topological insulators, a new state of matter discovered recently, have attracted great interest due to their novel properties. They are insulating inside the bulk, but conducting at the surface or edges. This peculiar behavior is characterized by an insulating bulk energy gap and gapless surface or edge states, which originate from strong spin-orbit coupling and time-reversal symmetry. The spin and momentum locked surface states not only provide a model system to study fundamental physics, but can also lead to applications in spintronics and dissipationless electronics. While topological insulators are interesting by themselves, more exotic behaviors are predicted when an energy gap is induced at the surface. This dissertation explores two types of surface state gap in topological insulators, a superconducting gap induced by proximity effect and a magnetic gap induced by chemical doping. The first three chapters provide introductory theory and experimental details of my research. Chapter 1 provides a brief introduction to the theoretical background of topological insulators. Chapter 2 is dedicated to material synthesis principles and techniques. I will focus on two major synthesis methods: molecular beam epitaxy for the growth of Bi2Se3 thin films and chemical vapor deposition for the growth of Bi2Se3 nanoribbons and nanowires. Material characterization is discussed in Chapter 3. I will describe structural, morphological, magnetic, electrical, and electronic characterization techniques used to study topological insulators. Chapter 4 discusses the experiments on proximity-induced superconductivity in topological insulator (Bi2Se3) nanoribbons. This work is motivated by the search for the elusive Majorana fermions, which act as their own antiparticles. They were proposed by Ettore Majorara in 1937, but have remained undiscovered. Recently, Majorana's concept has been revived in condensed matter physics: a condensed matter analog of Majorana fermions is predicted to

  6. Insulated pipe clamp design

    International Nuclear Information System (INIS)

    Anderson, M.J.; Hyde, L.L.; Wagner, S.E.; Severud, L.K.

    1980-01-01

    Thin wall large diameter piping for breeder reactor plants can be subjected to significant thermal shocks during reactor scrams and other upset events. On the Fast Flux Test Facility, the addition of thick clamps directly on the piping was undesired because the differential metal temperatures between the pipe wall and the clamp could have significantly reduced the pipe thermal fatigue life cycle capabilities. Accordingly, an insulated pipe clamp design concept was developed. 5 refs

  7. Pourable Foam Insulation

    Science.gov (United States)

    Harvey, James A.; Butler, John M.; Chartoff, Richard P.

    1989-01-01

    Report describes search for polyisocyanurate/polyurethane foam insulation with superior characteristics. Discusses chemistry of current formulations. Tests of formulations, of individual ingredients and or alternative new formulations described. Search revealed commercially available formulations exhibiting increased thermal stability at temperatures up to 600 degree C, pours readily before curing, presents good appearance after curing, and remains securely bonded to aluminum at cryogenic temperatures. Total of 42 different formulations investigated, 10 found to meet requirements.

  8. Metal-insulator transition in SrTi1−xVxO3 thin films

    International Nuclear Information System (INIS)

    Gu, Man; Wolf, Stuart A.; Lu, Jiwei

    2013-01-01

    Epitaxial SrTi 1−x V x O 3 (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO 3 ) 0.3 (Sr 2 AlTaO 6 ) 0.7 (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization

  9. Two-magnon Raman scattering in a Mott-Hubbard antiferromagnet

    International Nuclear Information System (INIS)

    Basu, S.; Singh, A.

    1996-01-01

    A perturbation-theoretic diagrammatic scheme is developed for systematically studying the two-magnon Raman scattering in a Mott-Hubbard antiferromagnet. The fermionic structure of the magnon interaction vertex is obtained at order-1/N level in an inverse-degeneracy expansion, and the relevant two-magnon propagator is obtained by incorporating magnon interactions at a ladder-sum level. Evaluation of the magnon interaction vertex in the large-U limit yields a nearest-neighbor instantaneous interaction with interaction energy -J. Application of this approach to the intermediate-U regime, which is of relevance for cuprate antiferromagnets, is also discussed. Incorporating the zero-temperature magnon damping, which is estimated in terms of quantum spin fluctuations, the two-magnon Raman scattering intensity is evaluated and compared with experiments on La 2 CuO 4 . copyright 1996 The American Physical Society

  10. Experimental evidence for a Mott-Wigner glass phase of magnetite above the Verwey temperature

    International Nuclear Information System (INIS)

    Boekema, C.; Lichti, R.L.; Chan, K.C.B.; Brabers, V.A.M.; Denison, A.B.; Cooke, D.W.; Heffner, R.H.; Hutson, R.L.; Schillaci, M.E.

    1986-01-01

    New muon-spin-relaxation (μSR) results on magnetite are reported and discussed in light of earlier Moessbauer, neutron, and μSR results. Modification of the μSR anomaly (observed at 247 K in zero field), when an external magnetic field is applied, provides evidence that the anomaly results from cross relaxation between the muon Larmor precession and the electron-correlation process in the B sublattice. The combined results strongly indicate that phonon-assisted electron hopping is the principal conduction mechanism above the Verwey transition temperature (T/sub V/). Together with theoretical evidence, these data support Mott's suggestion that above T/sub V/ magnetite is in the Wigner-glass state

  11. Effects of the electron's anomaly in relativistic laser-assisted Mott scattering

    International Nuclear Information System (INIS)

    Ngoko Djiokap, J.M.; Tetchou Nganso, H.M.; Kwato Njock, M.G.

    2006-02-01

    We investigate the influence of the electron's anomalous magnetic moment on the process of relativistic Mott scattering in a powerful electromagnetic plane wave for which the ponderomotive energy is of the order of the magnitude of the electron's rest mass. For this purpose, we use the Coulomb-Dirac-Volkov and the Dirac-Volkov functions with the electron's anomaly to describe the initial and final states respectively. First-order Born differential cross sections of induced and inverse bremsstrahlung are obtained for linearly polarized laser light. Numerical calculations are carried out for various parameters values (i.e. scattering angle, the nucleus charge, photon energy, electrical field) and are compared with results obtained by Li et al. It is found that for parameters used in the present work, incorporating the anomaly of the electron in the initial and final states yields cross sections which are strongly modified whatever the scattering geometry, as compared to the outcome of the previous treatment. (author)

  12. Theoretical Modeling of Various Spectroscopies for Cuprates and Topological Insulators

    Science.gov (United States)

    Basak, Susmita

    structure, strong electron correlations (for cuprates) and spin-orbit coupling (for TIs) are included realistically in material-specific detail. Turning to the cuprates, in order to obtain a realistic description of various spectroscopies, one must include not only the effects of the matrix elements and the complexity of the crystal structure, but also of strong electronic correlations beyond the local density approximation (LDA)-based conventional picture, so that the physics of kinks, pseudogaps and superconductivity can be taken into account properly. In this connection, a self-consistent, intermediate coupling scheme informed by material-specific, first-principles band structures has been developed, where electron correlation effects beyond the LDA are incorporated via appropriate self-energy corrections to the electron and hole one-particle Green's functions. Here the antiferromagnetic (AFM) order is used as the simplest model of a competing order. A number of salient features of the resulting electronic spectrum and its energy, momentum and doping dependencies are in accord with experimental observations in electron as well as hole doped cuprates. This scheme thus provides a reasonable basis for undertaking a comprehensive, beyond-LDA level of modeling of various spectroscopies. The specific topics considered here are: (i) Origin of high-energy kink or the waterfall effect found in ARPES; (ii) Identification of the three energy scales observed in RIXS spectra as the pseudogap, charge transfer gap, and Mott gap; (iii) Evolution of the electron momentum densities with holedoping as seen in Compton scattering experiments. For three dimensional topological insulators, the ARPES and scanning tunneling microscopy (STM) spectra has been analyzed using a tight-binding model as well as a k · p model. The spin-orbit coupling, which is essential to produce the characteristic features of the surface states of a TI, is included realistically in the above models. In our

  13. Plasma immersion ion implantation into insulating materials

    International Nuclear Information System (INIS)

    Tian Xiubo; Yang Shiqin

    2006-01-01

    Plasma immersion ion implantation (PIII) is an effective surface modification tool. During PIII processes, the objects to be treated are immersed in plasmas and then biased to negative potential. Consequently the plasma sheath forms and ion implantation may be performed. The pre-requirement of plasma implantation is that the object is conductive. So it seems difficult to treat the insulating materials. The paper focuses on the possibilities of plasma implantation into insulting materials and presents some examples. (authors)

  14. Reduction of heat insulation upon soaking of the insulation layer

    Science.gov (United States)

    Achtliger, J.

    1983-09-01

    Improved thermal protection of hollow masonry by introduction of a core insulation between the inner and outer shell is discussed. The thermal conductivity of insulation materials was determined in dry state and after soaking by water with different volume-related moisture contents. The interpolated thermal conductivity values from three measured values at 10 C average temperature are presented as a function of the pertinent moisture content. Fills of expanded polystyrene, perlite and granulated mineral fibers, insulating boards made of mineral fibers and in situ cellular plastics produced from urea-formaldehyde resin were investigated. Test results show a confirmation of thermal conductivity values for insulating materials in hollow masonry.

  15. Use of Several Thermal Analysis Techniques to Study the Cracking of an Nitrile Butadiene Rubber (NBR) Insulator on the Booster Separation Motor (BSM) of the Space Shuttle

    Science.gov (United States)

    Wingard, Charles D.; Whitaker, Ann F. (Technical Monitor)

    2000-01-01

    Two different vendor rubber formulations have been used to produce the silica-filled NBR insulators for the BSM used on both of the Solid Rocket Boosters (SRBs) of the Space Shuttle. A number of lots of the BSM insulator in 1998-99 exhibited surface cracks and/or crazing. Each insulator is bonded to the BSM aluminum aft closure with an epoxy adhesive. Induced insulator stresses from adhesive cure are likely greatest where the insulator/adhesive contour is the greatest, thus showing increased insulator surface cracking in this area. Thermal analysis testing by Dynamic Mechanical Analyzer (DMA) and Thermomechanical Analysis (TMA) was performed on one each of the two vendor BSM insulators previously bonded that exhibited the surface cracking. The TMA data from the film/fiber technique yielded the most meaningful results, with thin insulator surface samples containing cracks having roughly the same modulus (stiffness) as thin insulator bulk samples just underneath.

  16. The electronic structure and metal-insulator transitions in vanadium oxides

    International Nuclear Information System (INIS)

    Mossanek, Rodrigo Jose Ochekoski

    2010-01-01

    The electronic structure and metal-insulator transitions in vanadium oxides (SrVO_3, CaVO_3, LaVO_3 and YVO_3) are studied here. The purpose is to show a new interpretation to the spectra which is coherent with the changes across the metal-insulator transition. The main experimental techniques are the X-ray photoemission (PES) and X-ray absorption (XAS) spectroscopies. The spectra are interpreted with cluster model, band structure and atomic multiplet calculations. The presence of charge-transfer satellites in the core-level PES spectra showed that these vanadium oxides cannot be classified in the Mott-Hubbard regime. Further, the valence band and core-level spectra presented a similar behavior across the metal insulator transition. In fact, the structures in the spectra and their changes are determined by the different screening channels present in the metallic or insulating phases. The calculated spectral weight showed that the coherent fluctuations dominate the spectra at the Fermi level and give the metallic character to the SrVO_3 and CaVO_3 compounds. The vanishing of this charge fluctuation and the replacement by the Mott-Hubbard screening in the LaVO_3 and YVO_3 systems is ultimately responsible for the opening of a band gap and the insulating character. Further, the correlation effects are, indeed, important to the occupied electronic structure (coherent and incoherent peaks). On the other hand, the unoccupied electronic structure is dominated by exchange and crystal field effects (t2g and eg sub-bands of majority and minority spins). The optical conductivity spectrum was obtained by convoluting the removal and addition states. It showed that the oxygen states, as well as the crystal field and exchange effects are necessary to correctly compare and interpret the experimental results. Further, a correlation at the charge-transfer region of the core-level and valence band optical spectra was observed, which could be extended to other transition metal oxides

  17. Electrical insulating liquid: A review

    Directory of Open Access Journals (Sweden)

    Deba Kumar Mahanta

    2017-08-01

    Full Text Available Insulating liquid plays an important role for the life span of the transformer. Petroleum-based mineral oil has become dominant insulating liquid of transformer for more than a century for its excellent dielectric and cooling properties. However, the usage of petroleum-based mineral oil, derived from a nonrenewable energy source, has affected the environment for its nonbiodegradability property. Therefore, researchers direct their attention to renewable and biodegradable alternatives. Palm fatty acid ester, coconut oil, sunflower oil, etc. are considered as alternatives to replace mineral oil as transformer insulation liquid. This paper gives an extensive review of different liquid insulating materials used in a transformer. Characterization of different liquids as an insulating material has been discussed. An attempt has been made to classify different insulating liquids-based on different properties.

  18. Topological insulators/superconductors: Potential future electronic materials

    International Nuclear Information System (INIS)

    Hor, Y. S.

    2014-01-01

    A new material called topological insulator has been discovered and becomes one of the fastest growing field in condensed matter physics. Topological insulator is a new quantum phase of matter which has Dirac-like conductivity on its surface, but bulk insulator through its interior. It is considered a challenging problem for the surface transport measurements because of dominant internal conductance due to imperfections of the existing crystals of topological insulators. By a proper method, the internal bulk conduction can be suppressed in a topological insulator, and permit the detection of the surface currents which is necessary for future fault-tolerant quantum computing applications. Doped topological insulators have depicted a large variety of bulk physical properties ranging from magnetic to superconducting behaviors. By chemical doping, a TI can change into a bulk superconductor. Nb x Bi 2 Se 3 is shown to be a superconductor with T c ∼ 3.2 K, which could be a potential candidate for a topological superconductor

  19. Electronic Structure of the Pyrochlore-Type Ru Oxides through the Metal--Insulator Transition

    International Nuclear Information System (INIS)

    Okamoto, J.; Fujimori, S.I.; Okane, T.; Fujimori, A.; Abbate, M.; Yoshii, S.; Sato, M.

    2003-01-01

    The electronic structures of the pyrochlore-type Ru oxides Sm 2-x Ca x Ru 2 O 7 and Sm 2-x Bi x Ru 2 O 7 , which show metal-insulator transition with increasing Ca or Bi concentration, have been studied by ultraviolet photoemission spectroscopy. Spectral changes near the Fermi level are different but reflect the tendency of their transport properties in both systems. The Sm 2-x Ca x Ru 2 O 7 system shows an energy shift, which is expected from the increase of hole in the Ru 4d t 2g band and the Sm 2 - x Bi x Ru 2 O 7 system shows spectral weight transfer within the Ru 4d t 2g band, which is expected to be observed in bandwidth-control Mott-Hubbard system. (author)

  20. Variable range hopping in TiO2 insulating layers for oxide electronic devices

    Directory of Open Access Journals (Sweden)

    Y. L. Zhao

    2012-03-01

    Full Text Available TiO2 thin films are of importance in oxide electronics, e.g., Pt/TiO2/Pt for memristors and Co-TiO2/TiO2/Co-TiO2 for spin tunneling devices. When such structures are deposited at a variety of oxygen pressures, how does TiO2 behave as an insulator? We report the discovery of an anomalous resistivity minimum in a TiO2 film at low pressure (not strongly dependent on deposition temperature. Hall measurements rule out band transport and in most of the pressure range the transport is variable range hopping (VRH though below 20 K it was difficult to differentiate between Mott and Efros-Shklovskii's (ES mechanism. Magnetoresistance (MR of the sample with lowest resistivity was positive at low temperature (for VRH but negative above 10 K indicating quantum interference effects.

  1. Magnetic states, correlation effects and metal-insulator transition in FCC lattice

    Science.gov (United States)

    Timirgazin, M. A.; Igoshev, P. A.; Arzhnikov, A. K.; Irkhin, V. Yu

    2016-12-01

    The ground-state magnetic phase diagram (including collinear and spiral states) of the single-band Hubbard model for the face-centered cubic lattice and related metal-insulator transition (MIT) are investigated within the slave-boson approach by Kotliar and Ruckenstein. The correlation-induced electron spectrum narrowing and a comparison with a generalized Hartree-Fock approximation allow one to estimate the strength of correlation effects. This, as well as the MIT scenario, depends dramatically on the ratio of the next-nearest and nearest electron hopping integrals {{t}\\prime}/t . In contrast with metallic state, possessing substantial band narrowing, insulator one is only weakly correlated. The magnetic (Slater) scenario of MIT is found to be superior over the Mott one. Unlike simple and body-centered cubic lattices, MIT is the first order transition (discontinuous) for most {{t}\\prime}/t . The insulator state is type-II or type-III antiferromagnet, and the metallic state is spin-spiral, collinear antiferromagnet or paramagnet depending on {{t}\\prime}/t . The picture of magnetic ordering is compared with that in the standard localized-electron (Heisenberg) model.

  2. Importance of space-time fluctuations and non-linearities for the transport inside insulating glasses

    International Nuclear Information System (INIS)

    Ladieu, F.

    2003-07-01

    This work deals with transport in insulating glasses. In such solids, the discrete translational symmetry is lost, which means that the plane wave analysis is not a priori the right 'starting point'. As a result, the transport is more difficult to handle, and a huge amount of works have been devoted to many aspects of transport in disordered systems, especially since the seventies. Here we focus on three specific questions: (i) the heat transport in glasses submitted to micro-beams and the associated irreversible vaporization; (ii) the electronic d.c. transport, below 1 Kelvin, in Mott-Anderson insulators, i.e. in 'electron glasses' where both disorder and electron-electron interactions are relevant; (iii) the low frequency dielectric constant in 'structural glasses' (i.e. 'ordinary glasses') which, below 1 Kelvin, is both universal (i.e. independent on the chemical composition) and very different of that of crystals. For each topic, we present both original experiments and the new theoretical concepts that we have elaborated so as to understand the main experimental features. Eventually, it appears that, in any case, transport in insulating glasses is strongly dominated by quite a small part of the 'glass-applied field' ensemble and that the nonlinear response is a relevant tool to get informations on this 'sub-part' which dominates the transport in the whole system. (author)

  3. Insulated Wire Fed Floating Monopole Antenna for Coastal Monitoring

    Directory of Open Access Journals (Sweden)

    Z. M. Loni

    2018-04-01

    Full Text Available A thin, flexible, insulated wire submerged in seawater forms a coaxial cable which has attenuation at ultra-high frequency (UHF dependent on the operating frequency, the diameter of the insulating material and the diameter of the inner conductor. An extension of the insulated wire above the surface through a spherical float forms a monopole antenna. Attenuation through the wire depends on the conductivity and temperature of seawater. This paper reports the effect of electromagnetic (EM wave propagation at 433 MHz through insulated wires with different radii of the insulating material and inner conductor. The attenuation was calculated and measured in the range of 32-47 dB/m. The propagation from the monopole antenna to a fixed shore based receiver was measured to be approximately equal to 1 dB/m. The propagation measurements were compared with a shielded coaxial cable. Results show that the propagation range depends on the ratio of the insulation radius to conductor radius for insulated wire, however, a shielded coaxial cable showed no significant attenuation. The technique has applications in coastal wireless sensor networks where the water depth changes continually due to tide and wave motion.

  4. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  5. Spintronics Based on Topological Insulators

    Science.gov (United States)

    Fan, Yabin; Wang, Kang L.

    2016-10-01

    Spintronics using topological insulators (TIs) as strong spin-orbit coupling (SOC) materials have emerged and shown rapid progress in the past few years. Different from traditional heavy metals, TIs exhibit very strong SOC and nontrivial topological surface states that originate in the bulk band topology order, which can provide very efficient means to manipulate adjacent magnetic materials when passing a charge current through them. In this paper, we review the recent progress in the TI-based magnetic spintronics research field. In particular, we focus on the spin-orbit torque (SOT)-induced magnetization switching in the magnetic TI structures, spin-torque ferromagnetic resonance (ST-FMR) measurements in the TI/ferromagnet structures, spin pumping and spin injection effects in the TI/magnet structures, as well as the electrical detection of the surface spin-polarized current in TIs. Finally, we discuss the challenges and opportunities in the TI-based spintronics field and its potential applications in ultralow power dissipation spintronic memory and logic devices.

  6. Spin-torque generation in topological insulator based heterostructures

    KAUST Repository

    Fischer, Mark H.

    2016-03-11

    Heterostructures utilizing topological insulators exhibit a remarkable spin-torque efficiency. However, the exact origin of the strong torque, in particular whether it stems from the spin-momentum locking of the topological surface states or rather from spin-Hall physics of the topological-insulator bulk, remains unclear. Here, we explore a mechanism of spin-torque generation purely based on the topological surface states. We consider topological-insulator-based bilayers involving ferromagnetic metal (TI/FM) and magnetically doped topological insulators (TI/mdTI), respectively. By ascribing the key theoretical differences between the two setups to location and number of active surface states, we describe both setups within the same framework of spin diffusion of the nonequilibrium spin density of the topological surface states. For the TI/FM bilayer, we find large spin-torque efficiencies of roughly equal magnitude for both in-plane and out-of-plane spin torques. For the TI/mdTI bilayer, we elucidate the dominance of the spin-transfer-like torque. However, we cannot explain the orders of magnitude enhancement reported. Nevertheless, our model gives an intuitive picture of spin-torque generation in topological-insulator-based bilayers and provides theoretical constraints on spin-torque generation due to topological surface states.

  7. Characteristics of high gradient insulators for accelerator and high power flow applications

    International Nuclear Information System (INIS)

    Elizondo, J.M.; Krogh, M.L.; Smith, D.

    1997-07-01

    The high gradient insulator has been demonstrated to operate at levels comparable or better than special geometry or coated insulators. Some patented insulator configurations allow for sophisticated accelerator structures, high power flow interfaces, and microwave applications not previously possible. Sophisticated manufacturing techniques available at AlliedSignal FM and T made this development possible. Bipolar and high power flow applications are specially suited for present insulator designs. The insulator shows a beneficial effect when used under RF fields or RF structures. These insulators can be designed, to a first approximation, from simple electron flight path equations. With a recently developed model of surface flashover physics the authors completed a set of design calculations that include effects such as layer density and dielectric/metal thickness. Experimental data, obtained in the last few years of development, is presented and reviewed. Several insulator fabrication characteristics, indicating critical design parameters, are also presented

  8. Impact of insulation and consumer behavior on natural gas consumption

    Energy Technology Data Exchange (ETDEWEB)

    van Mastrigt, P.

    1983-09-01

    The influence of insulation measures and certain changes in behavioral patterns on gas consumption for home heating has been examined, both on an annual basis and on the maximum day and at the maximum hour. By means of good insulation (cavity wall insulation and double glazing on the ground floor) annual gas consumption can be brought down by 28-35%, depending on the type of dwelling, as compared with moderate insulation. Maximum day consumption will go down by 26-33% and maximum hour consumption by no more than 20-28%. Further insulation, to current Danish standards, would enable savings of up to 72% of annual consumption, 64-66% of maximum day consumption and 52-55% of maximum hour consumption. By further night reduction from 14.5 degrees C to 12 degrees C 2% of the annual consumption can be saved in moderately insulated dwellings. It also leads, however, to an increase in maximum hour consumption by some 11%. In heavily insulated dwellings further night reduction does not yield any additional savings on the annual consumption. By lowering the thermostat setting by 2 degrees C in the daytime annual consumption in a moderately insulated dwelling can be cut by 9%. With increasing insulation level the savings will get higher, up to 11% in heavily insulated dwellings. Drawing the curtains during the evening and night may yield savings of 4-6% depending on the ratio of glass surface to total outer wall surface. These savings will be lower as the insulation level increases. The results of the study have been converted to the overall domestic natural gas consumption in the Netherlands. In 1985 the annual consumption will be 7% lower than in 1978 as a result of insulation measures and changes in consumer behavior, even at a rise in the total number of connections. Maximum day consumption will be 5% lower and maximum hour consumption will be virtually the same. This trend became already manifest during the 1978-1982 period.

  9. Thermally-insulating layer for nuclear reactors

    International Nuclear Information System (INIS)

    1975-01-01

    The thermally-insulating layer has been designed both for insulating surfaces within the core of a nuclear reactor and transmitting loads such as the core-weight. Said layer comprises a layer of bricks and a layer of tiles with smaller clearance between the tiles than between the bricks, the latter having a reduced cross-section against the tiles so as to be surrounded by relatively large interconnected ducts forming a continuous chamber behind the tile-layer in order to induce a substantial decreases in the transverse flow of the reactor-core coolant. The core preferably comprises hexagonal columns supported by rhomb-shaped plates, with channels distributed so as to mix the coolant of twelve columns. The plates are separated from support-tiles by means of pillars [fr

  10. Nuclear reactor insulation and preheat system

    International Nuclear Information System (INIS)

    Wampole, N.C.

    1978-01-01

    An insulation and preheat system is disclosed for preselected components of a fluid cooled nuclear reactor. A gas tight barrier or compartment of thermal insulation surrounds the selected components and includes devices to heat the internal atmosphere of the ocmpartment. An external surface of the compartment of enclosure is cooled, such as by a circulating fluid. The heating devices provide for preheating of the components, as well as maintenance of a temperature sufficient to ensure that the reactor coolant fluid will not solidify during shutdown. The external cooling limits the heat transferred to other plant structures, such as supporting concrete and steel. The barrier is spaced far enough from the surrounded components so as to allow access for remote or manual inspection, maintenance, and repair

  11. Plastic Materials for Insulating Applications.

    Science.gov (United States)

    Wang, S. F.; Grossman, S. J.

    1987-01-01

    Discusses the production and use of polymer materials as thermal insulators. Lists several materials that provide varying degrees of insulation. Describes the production of polymer foam and focuses on the major applications of polystyrene foam, polyurethane foam, and polyisocyanurate foam. (TW)

  12. Magnetically self-insulated transformers

    International Nuclear Information System (INIS)

    Novac, B.M.; Smith, I.R.; Brown, J.

    2002-01-01

    Magnetic insulation is the only practicable form of insulation for much equipment used in ultrahigh pulsed-power work, including transmission lines and plasma opening switches. It has not however so far been successfully exploited in the transformers that are necessarily involved, and the first proposed design that appeared more than 30 years ago raised apparently insuperable problems. The two novel arrangements for a magnetically insulated transformer described in this paper overcome the problems faced by the earlier designs and also offer considerable scope for development in a number of important areas. Theoretical justification is given for their insulating properties, and this is confirmed by proof-of-principle results obtained from a small-scale experimental prototype in which magnetic insulation was demonstrated at up to 100 kV. (author)

  13. Experimental and Mathematical Analysis of Multilayer Insulation below 80 K

    CERN Document Server

    Chorowski, M; Parente, C; Riddone, G

    2000-01-01

    The Large Hadron Collider [1], presently under construction at CERN, will make an extensive use of multilayer insulation system (MLI). The total surface to be insulated will be of about 80000 m2. A mathematical model has been developed to describe the heat flux through MLI from 80 K to 4.2 K. The total heat flux between the layers is the result of three distinct heat transfer modes: radiation, residual gas conduction and solid conduction. The mathematical model enables prediction of MLI behavior with regard to different MLI parameters, such as gas insulation pressure, number of layers and boundary temperatures. The calculated values have been compared to the experimental measurements carried out at CERN. Theoretical and experimental results revealed to be in good agreement, especially for insulation vacuum between 10-5 Pa and 10-3 Pa.

  14. Experimental demonstration of anomalous Floquet topological insulator for sound

    Science.gov (United States)

    Peng, Yu-Gui; Qin, Cheng-Zhi; Zhao, De-Gang; Shen, Ya-Xi; Xu, Xiang-Yuan; Bao, Ming; Jia, Han; Zhu, Xue-Feng

    2016-11-01

    Time-reversal invariant topological insulator is widely recognized as one of the fundamental discoveries in condensed matter physics, for which the most fascinating hallmark is perhaps a spin-based topological protection, the absence of scattering of conduction electrons with certain spins on matter surface. Recently, it has created a paradigm shift for topological insulators, from electronics to photonics, phononics and mechanics as well, bringing about not only involved new physics but also potential applications in robust wave transport. Despite the growing interests in topologically protected acoustic wave transport, T-invariant acoustic topological insulator has not yet been achieved. Here we report experimental demonstration of anomalous Floquet topological insulator for sound: a strongly coupled metamaterial ring lattice that supports one-way propagation of pseudo-spin-dependent edge states under T-symmetry. We also demonstrate the formation of pseudo-spin-dependent interface states due to lattice dislocations and investigate the properties of pass band and band gap states.

  15. Intense-proton-beam transport through an insulator beam guide

    International Nuclear Information System (INIS)

    Hanamori, Susumu; Kawata, Shigeo; Kikuchi, Takashi; Fujita, Akira; Chiba, Yasunobu; Hikita, Taisuke; Kato, Shigeru

    1998-01-01

    In this paper we study intense-proton-beam transport through an insulator guide. In our previous papers (Jpn. J. Appl. Phys. 34 (1995) L520, Jpn. J. Appl. Phys. 35 (1996) L1127) we proposed a new system for intense-electron-beam transport using an insulator guide. In contrast to the electron beam, an intense-proton beam tends to generate a virtual anode, because of the large proton mass. The virtual anode formation at the initial stage is prevented by prefilled plasma in this system. During and after this, electrons are extracted from the plasma generated at the insulator surface by the proton beam space charge and expand over the transport area. The proton beam charge is effectively neutralized by the electrons. Consequently, the proton beam propagates efficiently through the insulator beam guide. The electron extraction is self-regulated by the net space charge of the proton beam. (author)

  16. Research on vacuum insulation for cryocables

    International Nuclear Information System (INIS)

    Graneau, P.

    1974-01-01

    Vacuum insulation, as compared with solid insulation, simplifies the construction of both resistive or superconducting cryogenic cables. The common vacuum space in the cable can furnish thermal insulation between the environment and the cryogenic coolant, provide electrical insulation between conductors, and establish thermal isolation between go- and return-coolant streams. The differences between solid and vacuum high voltage insulation are discussed, and research on the design, materials selection, and testing of vacuum insulated cryogenic cables is described

  17. Heat insulating structure for use in transporting and handling gas of high temperature and pressure

    International Nuclear Information System (INIS)

    Mathusima, T.; Sato, T.; Uenishi, A.

    1980-01-01

    A heat insulating structure is described that has a heat-resistant tube disposed in a tubular cylindrical body and defining a passage for a high temperature gas, a heat insulating material disposed between the tube and the tubular cylindrical body and adapted to prevent the heat possessed by the gas from being transmitted to the tubular cylindrical body, and a spring adapted to bias the heat insulating material toward the inner surface of the tubular cylindrical body, so as to prevent the formation of a bypass passage for the gas including the gap between the tubular cylindrical body and the heat insulating material. The heat insulating material consists of a plurality of fibrous heat insulating materials mainly consisting of bulky fibrous materials and a plurality of shaped fibrous heat insulating materials. These fibrous heat insulating materials and the shaped fibrous heat insulating materials are arranged alternatingly and independently in the axial direction. In each of the bulky fibrous heat insulating material, disposed is a spring for biasing the shaped fibrous heat insulating material in the axial direction

  18. 3D Spin-Liquid State in an Organic Hyperkagome Lattice of Mott Dimers

    Science.gov (United States)

    Mizuno, Asato; Shuku, Yoshiaki; Matsushita, Michio M.; Tsuchiizu, Masahisa; Hara, Yuuki; Wada, Nobuo; Shimizu, Yasuhiro; Awaga, Kunio

    2017-08-01

    We report the first 3D spin liquid state of isotropic organic spins. Structural analysis, and magnetic and heat-capacity measurements were carried out for a chiral organic radical salt, (TBA) 1.5[(-)-NDI -Δ ] (TBA denotes tetrabutylammonium and NDI denotes naphthalene diimide), in which (-)-NDI -Δ forms a K4 structure due to its triangular molecular structure and an intermolecular π -π overlap between the NDI moieties. This lattice was identical to the hyperkagome lattice of S =1 /2 Mott dimers, and should exhibit 3D spin frustration. In fact, even though the high-temperature magnetic susceptibility followed the Curie-Weiss law with a negative Weiss constant of θ =-15 K , the low-temperature magnetic measurements revealed no long-range magnetic ordering down to 70 mK, and suggested the presence of a spin liquid state with a large residual paramagnetism χ0 of 8.5 ×10-6 emu g-1 at the absolute zero temperature. This was supported by the N 14 NMR measurements down to 0.38 K. Further, the low-temperature heat capacities cp down to 68 mK clearly indicated the presence of cp for the spin liquid state, which can be fitted to the power law of T0.62 in the wide temperature range 0.07-4.5 K.

  19. Quasi-one-dimensional Hall physics in the Harper–Hofstadter–Mott model

    Science.gov (United States)

    Kozarski, Filip; Hügel, Dario; Pollet, Lode

    2018-04-01

    We study the ground-state phase diagram of the strongly interacting Harper–Hofstadter–Mott model at quarter flux on a quasi-one-dimensional lattice consisting of a single magnetic flux quantum in y-direction. In addition to superfluid phases with various density patterns, the ground-state phase diagram features quasi-one-dimensional analogs of fractional quantum Hall phases at fillings ν = 1/2 and 3/2, where the latter is only found thanks to the hopping anisotropy and the quasi-one-dimensional geometry. At integer fillings—where in the full two-dimensional system the ground-state is expected to be gapless—we observe gapped non-degenerate ground-states: at ν = 1 it shows an odd ‘fermionic’ Hall conductance, while the Hall response at ν = 2 consists of the transverse transport of a single particle–hole pair, resulting in a net zero Hall conductance. The results are obtained by exact diagonalization and in the reciprocal mean-field approximation.

  20. Unconventional quantum Hall effect in Floquet topological insulators

    KAUST Repository

    Tahir, M.

    2016-07-27

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.

  1. Unconventional quantum Hall effect in Floquet topological insulators

    KAUST Repository

    Tahir, M.; Vasilopoulos, P.; Schwingenschlö gl, Udo

    2016-01-01

    We study an unconventional quantum Hall effect for the surface states of ultrathin Floquet topological insulators in a perpendicular magnetic field. The resulting band structure is modified by photon dressing and the topological property is governed by the low-energy dynamics of a single surface. An exchange of symmetric and antisymmetric surface states occurs by reversing the lights polarization. We find a novel quantum Hall state in which the zeroth Landau level undergoes a phase transition from a trivial insulator state, with Hall conductivity αyx = 0 at zero Fermi energy, to a Hall insulator state with αyx = e2/2h. These findings open new possibilities for experimentally realizing nontrivial quantum states and unusual quantum Hall plateaus at (±1/2,±3/2,±5/2, ...)e2/h. © 2016 IOP Publishing Ltd Printed in the UK.

  2. Quantum phase transitions of a disordered antiferromagnetic topological insulator

    Science.gov (United States)

    Baireuther, P.; Edge, J. M.; Fulga, I. C.; Beenakker, C. W. J.; Tworzydło, J.

    2014-01-01

    We study the effect of electrostatic disorder on the conductivity of a three-dimensional antiferromagnetic insulator (a stack of quantum anomalous Hall layers with staggered magnetization). The phase diagram contains regions where the increase of disorder first causes the appearance of surface conduction (via a topological phase transition), followed by the appearance of bulk conduction (via a metal-insulator transition). The conducting surface states are stabilized by an effective time-reversal symmetry that is broken locally by the disorder but restored on long length scales. A simple self-consistent Born approximation reliably locates the boundaries of this so-called "statistical" topological phase.

  3. Lightweight, Thermally Insulating Structural Panels

    Science.gov (United States)

    Eisen, Howard J.; Hickey, Gregory; Wen, Liang-Chi; Layman, William E.; Rainen, Richard A.; Birur, Gajanana C.

    1996-01-01

    Lightweight, thermally insulating panels that also serve as structural members developed. Honeycomb-core panel filled with low-thermal-conductivity, opacified silica aerogel preventing convection and minimizes internal radiation. Copper coating on face sheets reduces radiation. Overall thermal conductivities of panels smaller than state-of-art commercial non-structurally-supporting foam and fibrous insulations. On Earth, panels suitable for use in low-air-pressure environments in which lightweight, compact, structurally supporting insulation needed; for example, aboard high-altitude aircraft or in partially evacuated panels in refrigerators.

  4. Reflecting variable opening insulating panel

    International Nuclear Information System (INIS)

    Nungesser, W.T.

    1976-01-01

    A description is given of a reflecting variable opening insulating panel assembly, comprising a static panel assembly of reflecting insulation sheets forming a cavity along one side of the panel and a movable panel opening out by sliding from the cavity of the static panel, and a locking device for holding the movable panel in a position extending from the cavity of the static panel. This can apply to a nuclear reactor of which the base might require maintenance and periodical checking and for which it is desirable to have available certain processes for the partial dismantling of the insulation [fr

  5. Insulating fcc YH

    International Nuclear Information System (INIS)

    Molen, S. J. van der; Nagengast, D. G.; Gogh, A. T. M. van; Kalkman, J.; Kooij, E. S.; Rector, J. H.; Griessen, R.

    2001-01-01

    We study the structural, optical, and electrical properties of Mg z Y 1-z switchable mirrors upon hydrogenation. It is found that the alloys disproportionate into essentially pure YH 3-δ and MgH 2 with the crystal structure of YH 3-δ dependent on the Mg concentration z. For 0 3-δ are observed, whereas for z≥0.1 only cubic YH 3-δ is present. Interestingly, cubic YH 3-δ is expanded compared to YH 2 , in disagreement with theoretical predictions. From optical and electrical measurements we conclude that cubic YH 3-δ is a transparent insulator with properties similar to hexagonal YH 3-δ . Our results are inconsistent with calculations predicting fcc YH 3-δ to be metallic, but they are in good agreement with recent GW calculations on both hcp and fcc YH 3 . Finally, we find an increase in the effective band gap of the hydrided Mg z Y 1-z alloys with increasing z. Possibly this is due to quantum confinement effects in the small YH 3 clusters

  6. Metal-insulator transition in SrTi{sub 1−x}V{sub x}O{sub 3} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gu, Man [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Wolf, Stuart A. [Department of Physics, University of Virginia, 382 McCormick Rd., Charlottesville, Virginia 22904 (United States); Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States); Lu, Jiwei [Department of Materials Science and Engineering, University of Virginia, 395 McCormick Rd., Charlottesville, Virginia 22904 (United States)

    2013-11-25

    Epitaxial SrTi{sub 1−x}V{sub x}O{sub 3} (0 ≤ x ≤ 1) thin films were grown on (001)-oriented (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSAT) substrates using the pulsed electron-beam deposition technique. The transport study revealed a temperature driven metal-insulator transition (MIT) at 95 K for x = 0.67. The films with higher vanadium concentration (x > 0.67) were metallic corresponding to a Fermi liquid system. In the insulating phase (x < 0.67), the resistivity behavior was governed by Mott's variable range hopping mechanism. The possible mechanisms for the induced MIT are discussed, including the effects of electron correlation, lattice distortion, and Anderson localization.

  7. A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-01-01

    Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal–insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices. PMID:28773222

  8. A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

    Science.gov (United States)

    Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

    2017-07-27

    Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

  9. Measure Guideline: Basement Insulation Basics

    Energy Technology Data Exchange (ETDEWEB)

    Aldrich, R.; Mantha, P.; Puttagunta, S.

    2012-10-01

    This guideline is intended to describe good practices for insulating basements in new and existing homes, and is intended to be a practical resources for building contractors, designers, and also to homeowners.

  10. Metal-insulator-semiconductor photodetectors.

    Science.gov (United States)

    Lin, Chu-Hsuan; Liu, Chee Wee

    2010-01-01

    The major radiation of the sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  11. Metal-Insulator-Semiconductor Photodetectors

    Directory of Open Access Journals (Sweden)

    Chu-Hsuan Lin

    2010-09-01

    Full Text Available The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.

  12. 16 CFR 460.18 - Insulation ads.

    Science.gov (United States)

    2010-01-01

    ... Commercial Practices FEDERAL TRADE COMMISSION TRADE REGULATION RULES LABELING AND ADVERTISING OF HOME INSULATION § 460.18 Insulation ads. (a) If your ad gives an R-value, you must give the type of insulation and... your ad gives a price, you must give the type of insulation, the R-value at a specific thickness, the...

  13. Cryogenic foam insulation: Abstracted publications

    Science.gov (United States)

    Williamson, F. R.

    1977-01-01

    A group of documents were chosen and abstracted which contain information on the properties of foam materials and on the use of foams as thermal insulation at cryogenic temperatures. The properties include thermal properties, mechanical properties, and compatibility properties with oxygen and other cryogenic fluids. Uses of foams include applications as thermal insulation for spacecraft propellant tanks, and for liquefied natural gas storage tanks and pipelines.

  14. Simultaneous in-bore rail and insulator spectra from a railgun plasma armature

    International Nuclear Information System (INIS)

    Keefer, D.; Sedghinasah, A.; Crawford, R.

    1991-01-01

    This paper reports on absolute spectral radiance measurements obtained simultaneously at the rail and insulator surface of the UTSI 1 cm square-bore railgun. The emission spectra were obtained through the use of quartz optical fibers which penetrated both the rail and the insulator walls. The spectral characteristics of the rail and insulator emission are quite similar but differ significantly in magnitude. A detailed plasma radiation model was used to analyze these spectra. In order to obtain reasonable agreement between the model predictions and the experimental spectra, it was necessary to assume that these existed a broadband absorbing layer at the insulator surface. This result suggests a new physical model of the plasma armature in which insulator ablation leads to significant 3-dimensional flow and affects the shape of the current emission pattern on the rail surfaces

  15. Standard Practice for Evaluating Thermal Insulation Materials for Use in Solar Collectors

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    1994-01-01

    1.1 This practice sets forth a testing methodology for evaluating the properties of thermal insulation materials to be used in solar collectors with concentration ratios of less than 10. Tests are given herein to evaluate the pH, surface burning characteristics, moisture adsorption, water absorption, thermal resistance, linear shrinkage (or expansion), hot surface performance, and accelerated aging. This practice provides a test for surface burning characteristics but does not provide a methodology for determining combustibility performance of thermal insulation materials. 1.2 The tests shall apply to blanket, rigid board, loose-fill, and foam thermal insulation materials used in solar collectors. Other thermal insulation materials shall be tested in accordance with the provisions set forth herein and should not be excluded from consideration. 1.3 The assumption is made that elevated temperature, moisture, and applied stresses are the primary factors contributing to the degradation of thermal insulation mat...

  16. Topological Oxide Insulator in Cubic Perovskite Structure

    Science.gov (United States)

    Jin, Hosub; Rhim, Sonny H.; Im, Jino; Freeman, Arthur J.

    2013-01-01

    The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases. PMID:23575973

  17. Epitaxy-distorted spin-orbit Mott insulator in Sr.sub.2./sub.IrO.sub.4./sub. thin films

    Czech Academy of Sciences Publication Activity Database

    Rayan Serrao, C.; Liu, J.; Heron, J.T.; Singh-Bhalla, G.; Yadav, A.; Suresha, S.; Paull, R.J.; Yi, D.; Chu, J.-H.; Trassin, M.; Vishwanath, A.; Arenholz, E.; Frontera, C.; Železný, Jakub; Jungwirth, Tomáš; Martí, Xavier; Ramesh, R.

    2013-01-01

    Roč. 87, č. 8 (2013), , , "085121-1"-"085121-6" ISSN 1098-0121 EU Projects: European Commission(XE) 268066 - 0MSPIN Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional support: RVO:68378271 Keywords : oxide semiconductors * spin-orbit coupling Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.664, year: 2013

  18. Heat transfer performance of multilayer insulation system under roof slab of pool-type LMFBR

    International Nuclear Information System (INIS)

    Kinoshita, Izumi; Naohara, Nobuyuki; Uotani, Masaki

    1986-01-01

    To cope with thermal expansion of stainless steel plate, about 90 insulation structures are installed under the roof-slab of pool-type LMFBR. The objective of this study is to evaluate from heat transfer experiment and visualized experiment, the effect of distance between each thermal insulation structure on heat transfer characteristics of insulation system under roof-slab. Two types of insulation structures are selected, one is open type and the other is closed type. Distance between each thermal insulation structure and hot surface temperatures are varied as a parameter. Furthermore, heat flux of the roof-slab insulation system of reactor are estimated from the results of heat transfer experiment. (author)

  19. Insulation performance data and assessment procedures for steam kiln energy conservation investments

    Energy Technology Data Exchange (ETDEWEB)

    Zaccor, J.V.

    1980-09-01

    For a demonstration project, the costs and benefits of insulating concrete block curing kilns to isolate the kiln thermal mass from the curing cycle are determined. Data were developed on service life of FOAMGLAS insulation, the effect of Johnson burners on the insulation and mounting, performance of an alternative insulation (a rapidly installed, spray-on polyurethane foam), and a simple incentive to promote implementation of industrial energy conservation concepts. Data are tabulated and compared for the FOAMGLAS and CPR 480 polyurethane insulations. Specific studies of insulation that was installed on inside surfaces of kilns to lock the kiln-mass out of the curing cycle are given for Blocklite plant in California, the Ameron pipe plant in California, and the Superlite plant in Phoenix, Arizona. (MCW)

  20. Avalanches in insulating gases

    International Nuclear Information System (INIS)

    Verhaart, H.F.A.

    1982-01-01

    Avalanches of charged particles in gases are often studied with the ''electrical method'', the measurement of the waveform of the current in the external circuit. In this thesis a substantial improvement of the time resolution of the measuring setup, to be used for the electrical method, is reported. The avalanche is started by an N 2 -laser with a pulse duration of only 0.6 ns. With this laser it is possible to release a high number of primary electrons (some 10 8 ) which makes it possible to obtain sizeable signals, even at low E/p values. With the setup it is possible to analyze current waveforms with a time resolution down to 1.4 ns, determined by both the laser and the measuring system. Furthermore it is possible to distinguish between the current caused by the electrons and the current caused by the ions in the avalanche and to monitor these currents simultaneously. Avalanche currents are measured in N 2 , CO 2 , O 2 , H 2 O, air of varying humidity, SF 6 and SF 6 /N 2 mixtures. Depending on the nature of the gas and the experimental conditions, processes as diffusion, ionization, attachment, detachment, conversion and secondary emission are observed. Values of parameters with which these processes can be described, are derived from an analysis of the current waveforms. For this analysis already published theories and new theories described in this thesis are used. The drift velocity of both the electrons and the ions could be easily determined from measured avalanche currents. Special attention is paid to avalanches in air becasue of the practical importance of air insulation. (Auth.)

  1. Phase coherent transport in hybrid superconductor-topological insulator devices

    Science.gov (United States)

    Finck, Aaron

    2015-03-01

    Heterostructures of superconductors and topological insulators are predicted to host unusual zero energy bound states known as Majorana fermions, which can robustly store and process quantum information. Here, I will discuss our studies of such heterostructures through phase-coherent transport, which can act as a unique probe of Majorana fermions. We have extensively explored topological insulator Josephson junctions through SQUID and single-junction diffraction patterns, whose unusual behavior give evidence for low-energy Andreev bound states. In topological insulator devices with closely spaced normal and superconducting leads, we observe prominent Fabry-Perot oscillations, signifying gate-tunable, quasi-ballistic transport that can elegantly interact with Andreev reflection. Superconducting disks deposited on the surface of a topological insulator generate Aharonov-Bohm-like oscillations, giving evidence for unusual states lying near the interface between the superconductor and topological insulator surface. Our results point the way towards sophisticated interferometers that can detect and read out the state of Majorana fermions in topological systems. This work was done in collaboration with Cihan Kurter, Yew San Hor, and Dale Van Harlingen. We acknowledge funding from Microsoft Project Q.

  2. Dynamical mean field study of the Mott transition in the half-filled Hubbard model on a triangular lattice

    OpenAIRE

    Aryanpour, K.; Pickett, W. E.; Scalettar, R. T.

    2006-01-01

    We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at half-filling. We estimate the value of the critical interaction to be $U_c=12.0 \\pm 0.5$ in units of the hopping amplitude $t$ through the evolution of the magnetic moment, spectral function, internal energy and specific heat as the interaction $U$ and temperature $T$ ...

  3. Two technicians apply insulation to S-II second stage

    Science.gov (United States)

    1964-01-01

    Two technicians apply insulation to the outer surface of the S-II second stage booster for the Saturn V moon rocket. The towering 363-foot Saturn V was a multi-stage, multi-engine launch vehicle standing taller than the Statue of Liberty. Altogether, the Saturn V engines produced as much power as 85 Hoover Dams.

  4. Electrical insulators for the theta-pinch fusion reactor

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.

    1976-01-01

    The five major applications for electrical insulators in the Reference Theta Pinch Reactor are as follows: (1) first-wall insulator, (2) blanket intersegment insulator, (3) graphite encapsulating insulator, (4) implosion coil insulator, and (5) compression coil insulator. Insulator design proposals and some preliminary test results are given for each application

  5. Passive Collecting of Solar Radiation Energy using Transparent Thermal Insulators, Energetic Efficiency of Transparent Thermal Insulators

    Directory of Open Access Journals (Sweden)

    Smajo Sulejmanovic

    2014-11-01

    Full Text Available This paper explains passive collection of solar radiation energy using transparent thermal insulators. Transparent thermal insulators are transparent for sunlight, at the same time those are very good thermal insulators. Transparent thermal insulators can be placed instead of standard conventional thermal insulators and additionally transparent insulators can capture solar radiation, transform it into heat and save heat just as standard insulators. Using transparent insulators would lead to reduce in usage of fossil fuels and would help protection of an environment and reduce effects of global warming, etc.

  6. Quantum magnetotransport properties of ultrathin topological insulator films

    KAUST Repository

    Tahir, M.

    2013-01-30

    We study the quantum magnetotransport in ultrathin topological insulator films in an external magnetic field considering hybridization between the upper and lower surfaces of the film. We investigate the two possible mechanisms for splitting of Landau levels, Zeeman and hybridization effects, and show that their interplay leads to minima in the collisional and Hall conductivities with a metal-to-insulator phase transition at the charge neutrality point. Hall plateaus arise at unusual multiples of e2/h . Evidence of a quantum phase transition for the zeroth and splitting of the higher Landau levels is found from the temperature and magnetic field dependences of the transport.

  7. Quantum magnetotransport properties of ultrathin topological insulator films

    KAUST Repository

    Tahir, M.; Sabeeh, K.; Schwingenschlö gl, Udo

    2013-01-01

    We study the quantum magnetotransport in ultrathin topological insulator films in an external magnetic field considering hybridization between the upper and lower surfaces of the film. We investigate the two possible mechanisms for splitting of Landau levels, Zeeman and hybridization effects, and show that their interplay leads to minima in the collisional and Hall conductivities with a metal-to-insulator phase transition at the charge neutrality point. Hall plateaus arise at unusual multiples of e2/h . Evidence of a quantum phase transition for the zeroth and splitting of the higher Landau levels is found from the temperature and magnetic field dependences of the transport.

  8. Topological insulator infrared pseudo-bolometer with polarization sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Peter Anand

    2017-10-25

    Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

  9. Multiple-Nozzle Spray Head Applies Foam Insulation

    Science.gov (United States)

    Walls, Joe T.

    1993-01-01

    Spray head equipped with four-nozzle turret mixes two reactive components of polyurethane and polyisocyanurate foam insulating material and sprays reacting mixture onto surface to be insulated. If nozzle in use becomes clogged, fresh one automatically rotated into position, with minimal interruption of spraying process. Incorporates features recirculating and controlling pressures of reactive components to maintain quality of foam by ensuring proper blend at outset. Also used to spray protective coats on or in ships, aircraft, and pipelines. Sprays such reactive adhesives as epoxy/polyurethane mixtures. Components of spray contain solid-particle fillers for strength, fire retardance, toughness, resistance to abrasion, or radar absorption.

  10. Metal-Insulator Transition in Copper Oxides Induced by Apex Displacements

    Directory of Open Access Journals (Sweden)

    Swagata Acharya

    2018-05-01

    Full Text Available High temperature superconductivity has been found in many kinds of compounds built from planes of Cu and O, separated by spacer layers. Understanding why critical temperatures are so high has been the subject of numerous investigations and extensive controversy. To realize high temperature superconductivity, parent compounds are either hole doped, such as La_{2}CuO_{4} (LCO with Sr (LSCO, or electron doped, such as Nd_{2}CuO_{4} (NCO with Ce (NCCO. In the electron-doped cuprates, the antiferromagnetic phase is much more robust than the superconducting phase. However, it was recently found that the reduction of residual out-of-plane apical oxygen dramatically affects the phase diagram, driving those compounds to a superconducting phase. Here we use a recently developed first-principles method to explore how displacement of the apical oxygen (AO in LCO affects the optical gap, spin and charge susceptibilities, and superconducting order parameter. By combining quasiparticle self-consistent GW (QS GW and dynamical mean-field theory (DMFT, we show that LCO is a Mott insulator, but small displacements of the apical oxygen drive the compound to a metallic state through a localization-delocalization transition, with a concomitant maximum in d-wave order parameter at the transition. We address the question of whether NCO can be seen as the limit of LCO with large apical displacements, and we elucidate the deep physical reasons why the behavior of NCO is so different from the hole-doped materials. We shed new light on the recent correlation observed between T_{c} and the charge transfer gap, while also providing a guide towards the design of optimized high-T_{c} superconductors. Further, our results suggest that strong correlation, enough to induce a Mott gap, may not be a prerequisite for high-T_{c} superconductivity.

  11. Positron Annihilation in Insulating Materials

    International Nuclear Information System (INIS)

    Asoka-Kumar, P; Sterne, PA

    2002-01-01

    We describe positron results from a wide range of insulating materials. We have completed positron experiments on a range of zeolite-y samples, KDP crystals, alkali halides and laser damaged SiO 2 . Present theoretical understanding of positron behavior in insulators is incomplete and our combined theoretical and experimental approach is aimed at developing a predictive understanding of positrons and positronium annihilation characteristics in insulators. Results from alkali halides and alkaline-earth halides show that positrons annihilate with only the halide ions, with no apparent contribution from the alkali or alkaline-earth cations. This contradicts the results of our existing theory for metals, which predicts roughly equal annihilation contributions from cation and anion. We also present result obtained using Munich positron microprobe on laser damaged SiO 2 samples

  12. Floquet topological insulators for sound

    Science.gov (United States)

    Fleury, Romain; Khanikaev, Alexander B.; Alù, Andrea

    2016-06-01

    The unique conduction properties of condensed matter systems with topological order have recently inspired a quest for the similar effects in classical wave phenomena. Acoustic topological insulators, in particular, hold the promise to revolutionize our ability to control sound, allowing for large isolation in the bulk and broadband one-way transport along their edges, with topological immunity against structural defects and disorder. So far, these fascinating properties have been obtained relying on moving media, which may introduce noise and absorption losses, hindering the practical potential of topological acoustics. Here we overcome these limitations by modulating in time the acoustic properties of a lattice of resonators, introducing the concept of acoustic Floquet topological insulators. We show that acoustic waves provide a fertile ground to apply the anomalous physics of Floquet topological insulators, and demonstrate their relevance for a wide range of acoustic applications, including broadband acoustic isolation and topologically protected, nonreciprocal acoustic emitters.

  13. Topological insulators and topological superconductors

    CERN Document Server

    Bernevig, Andrei B

    2013-01-01

    This graduate-level textbook is the first pedagogical synthesis of the field of topological insulators and superconductors, one of the most exciting areas of research in condensed matter physics. Presenting the latest developments, while providing all the calculations necessary for a self-contained and complete description of the discipline, it is ideal for graduate students and researchers preparing to work in this area, and it will be an essential reference both within and outside the classroom. The book begins with simple concepts such as Berry phases, Dirac fermions, Hall conductance and its link to topology, and the Hofstadter problem of lattice electrons in a magnetic field. It moves on to explain topological phases of matter such as Chern insulators, two- and three-dimensional topological insulators, and Majorana p-wave wires. Additionally, the book covers zero modes on vortices in topological superconductors, time-reversal topological superconductors, and topological responses/field theory and topolo...

  14. Existence of Mott-Schwinger interaction proved by means of p-/sup 12/C elastic scattering. [450 to 600 keV

    Energy Technology Data Exchange (ETDEWEB)

    Krause, H H; Arnold, W; Berg, H; Ulbricht, J; Clausnitzer, G [Giessen Univ. (Germany, F.R.). Inst. fuer Kernphysik

    1979-01-01

    The aim of this work was the unambiguous proof of the existence of the Mott-Schwinger interaction. The analyzing power of the p-/sup 12/C elastic scattering was measured in the energy range from 450 to 600 keV for scattering angles theta/sub Lab/ = 90/sup 0/ and 120/sup 0/ with an overall accuracy up to ..delta..A = 1 x /sup -4/. The data can be described very well with the R-matrix formalism including Mott-Schwinger interaction. Omitting this interaction results in large discrepancies.

  15. Influence of copper on the by-products of different oil-paper insulations

    International Nuclear Information System (INIS)

    Hao Jian; Liao Ruijin; Chen, George; Ma Chao

    2011-01-01

    Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

  16. Influence of copper on the by-products of different oil-paper insulations

    Energy Technology Data Exchange (ETDEWEB)

    Hao Jian; Liao Ruijin [State Key Laboratory of Power Transmission Equipment and System Security and New Technology, Chongqing University (China); Chen, George [School of Electronics and Computer Science, University of Southampton (United Kingdom); Ma Chao, E-mail: cquhaojian@126.com [Gansu Electric Power Research Institute (China)

    2011-08-12

    Transformer failure caused by the corrosion of copper material in transformer attracts great attention of researchers and engineers. In this paper, Karamay No. 25 naphthenic mineral oil, Karamay No. 25 paraffinic mineral oil, Kraft paper and copper were used to compose four combinations of oil-paper insulation samples. The ageing by-products and dielectric properties of the four combinations of oil-paper insulation samples were compared after they were thermally aged at 130 deg. C. The influence of copper on the by-products and dielectric properties of different oil-paper insulations was obtained. The results show that copper can accelerate the ageing rate of insulation oils and reduce their AC breakdown voltage. The content of copper substance dissolved in insulating oil increases with ageing time at first and then decreases. The paper aged in the oil-paper insulation sample with copper has higher moisture content than the one without copper. Results of energy dispersive spectroscopy (EDS) in the scanning electron microscope (SEM) show that there is copper product deposited on the surface of insulation paper. The insulation oil and paper aged in the oil-paper insulation sample with copper have higher dielectric loss and conductivity than that without copper.

  17. Topological insulators fundamentals and perspectives

    CERN Document Server

    Ortmann, Frank; Valenzuela, Sergio O

    2015-01-01

    There are only few discoveries and new technologies in physical sciences that have the potential to dramatically alter and revolutionize our electronic world. Topological insulators are one of them. The present book for the first time provides a full overview and in-depth knowledge about this hot topic in materials science and condensed matter physics. Techniques such as angle-resolved photoemission spectrometry (ARPES), advanced solid-state Nuclear Magnetic Resonance (NMR) or scanning-tunnel microscopy (STM) together with key principles of topological insulators such as spin-locked electronic

  18. Electrical insulation and conduction coating for fusion experimental devices

    Energy Technology Data Exchange (ETDEWEB)

    Onozuka, Masanori; Tsujimura, Seiji; Toyoda, Masahiko; Inoue, Masahiko [Mitsubishi Heavy Industries, Ltd., Yokohama (Japan); Abe, Tetsuya; Murakami, Yoshio [Japan Atomic Energy Research Inst., Naka (Japan)

    1996-01-01

    The development of electrical insulation and conduction coating methods that can be applied to large components of fusion experimental devices has been investigated. A thermal spraying method is used to coat the insulation or conduction materials on the structural components because of its applicability for large surfaces. The insulation material chosen was Al{sub 2}O{sub 3}, while Cr{sub 3}C{sub 2}-NiCr and WC-NiCr were chosen as conduction materials. These materials were coated on stainless steel substrates to examine the basic characteristics of the coated layers, such as their adhesive strength to the substrate, thermal shock resistance, electrical resistance, dielectric breakdown voltage, and thermal conductivity. It was found that they have sufficient electrical insulation and conduction properties, respectively. In addition, the sliding tests of the coated layers showed adequate frictional properties. The spraying method was tested on a 100- x 1000-mm surface and found to be applicable for large surfaces of experimental fusion devices. 9 refs., 6 figs., 15 tabs.

  19. Electrical insulation and conduction coating for fusion experimental devices

    International Nuclear Information System (INIS)

    Onozuka, Masanori; Tsujimura, Seiji; Toyoda, Masahiko; Inoue, Masahiko; Abe, Tetsuya; Murakami, Yoshio

    1996-01-01

    The development of electrical insulation and conduction coating methods that can be applied to large components of fusion experimental devices has been investigated. A thermal spraying method is used to coat the insulation or conduction materials on the structural components because of its applicability for large surfaces. The insulation material chosen was Al 2 O 3 , while Cr 3 C 2 -NiCr and WC-NiCr were chosen as conduction materials. These materials were coated on stainless steel substrates to examine the basic characteristics of the coated layers, such as their adhesive strength to the substrate, thermal shock resistance, electrical resistance, dielectric breakdown voltage, and thermal conductivity. It was found that they have sufficient electrical insulation and conduction properties, respectively. In addition, the sliding tests of the coated layers showed adequate frictional properties. The spraying method was tested on a 100- x 1000-mm surface and found to be applicable for large surfaces of experimental fusion devices. 9 refs., 6 figs., 15 tabs

  20. A quantized microwave quadrupole insulator with topologically protected corner states

    Science.gov (United States)

    Peterson, Christopher W.; Benalcazar, Wladimir A.; Hughes, Taylor L.; Bahl, Gaurav

    2018-03-01

    The theory of electric polarization in crystals defines the dipole moment of an insulator in terms of a Berry phase (geometric phase) associated with its electronic ground state. This concept not only solves the long-standing puzzle of how to calculate dipole moments in crystals, but also explains topological band structures in insulators and superconductors, including the quantum anomalous Hall insulator and the quantum spin Hall insulator, as well as quantized adiabatic pumping processes. A recent theoretical study has extended the Berry phase framework to also account for higher electric multipole moments, revealing the existence of higher-order topological phases that have not previously been observed. Here we demonstrate experimentally a member of this predicted class of materials—a quantized quadrupole topological insulator—produced using a gigahertz-frequency reconfigurable microwave circuit. We confirm the non-trivial topological phase using spectroscopic measurements and by identifying corner states that result from the bulk topology. In addition, we test the critical prediction that these corner states are protected by the topology of the bulk, and are not due to surface artefacts, by deforming the edges of the crystal lattice from the topological to the trivial regime. Our results provide conclusive evidence of a unique form of robustness against disorder and deformation, which is characteristic of higher-order topological insulators.