Dynamical x-ray diffraction studies of interfacial strain in superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Vandenberg, J.M.; Chu, S.N.G.; Hamm, R.A.; Panish, M.B.; Ritter, D.; Mancrander, A.T.

1992-01-01

This paper reports on dynamical X-ray diffraction studies that have been carried out for lattice-matched InGaAs/InP superlattices grown by modified molecular beam epitaxy (MBE) techniques. The (400) X-ray satellite pattern, which is predominantly affected by the strain modulation, was analyzed. The strain and thickness of the actual layers including the presence of strained interfacial regions were determined

Band structure of superlattice with δ-like potential

International Nuclear Information System (INIS)

Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

1993-08-01

Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

LSMO-STO(110) multilayered structure grown by metalorganic aerosol deposition

International Nuclear Information System (INIS)

Sapoval, Oleg; Belenchuk, Alexander; Canter, Valeriu; Zasavitsky, Efim; Moshnyaga, Vasily

2013-01-01

La 0.67 Sr 0.33 MnO 3 -SrTiO 3 multilayered structure was grown on SrTiO 3 (110) substrates by metalorganic aerosol deposition technique. The crystal structure was examined by X-ray analysis including simulation of diffraction and reflection patterns. The magneto transport properties of superlattice are presented. The critical thickness of (110)-oriented LSMO layers is lower than 7 perovskite unite cells. The oxygen stoichiometry provided due to high gas pressure conditions is responsible for reducing of critical thickness of LSMO layers at LSMO-STO(110) interfaces. (authors)

Magnetism and superconductivity in neodymium/lanthanum superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Sarthour, R.S.; McMorrow, Desmond Francis

1997-01-01

bilayers. Magnetization studies reveal the onset of superconductivity at a temperature comparable to bulk DHCP La, and the results suggest coupling across the antiferromagnetic Nd layers. The magnetic structures, investigated using neutron diffraction techniques, resemble those found in bulk Nd....... For the cubic sites of the DHCP structure the magnetic order is confined to individual Nd blocks. However, the magnetic order on the Nd hexagonal sites propagates coherently through the La, even when it becomes superconducting. (C) 1998 Elsevier Science B.V. All rights reserved.......A single-crystal Nd30La10 superlattice grown using molecular beam epitaxy is found to consist of alternating antiferromagnetic and superconducting layers at low temperature. The superlattice has the DHCP crystal structure, and the stacking sequence of close-packed planes is coherent over many...

Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs

Energy Technology Data Exchange (ETDEWEB)

Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw

2016-06-15

This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.

Interface disorder and transport properties in HTC/CMR superlattices

International Nuclear Information System (INIS)

Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E.

2004-01-01

The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T c RBa 2 Cu 3 O 7 (RBCO) and colossal magnetoresistance La x A 1-x MnO 3 (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La 2/3 Ca 1/3 MnO 3 and GdBCO/La 0.6 Sr 0.04 MnO 3 superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

International Nuclear Information System (INIS)

Tynell, Tommi; Karppinen, Maarit

2014-01-01

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

2014-01-31

Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

Novel electronic structures of superlattice composed of graphene and silicene

International Nuclear Information System (INIS)

Yu, S.; Li, X.D.; Wu, S.Q.; Wen, Y.H.; Zhou, S.; Zhu, Z.Z.

2014-01-01

Highlights: • Graphene/silicene superlattices exhibit metallic electronic properties. • Dirac point of graphene is folded to the Γ-point in the superlattice system. • Significant changes in the transport properties of the graphene layers are expected. • Small amount of charge transfer from the graphene to the silicene layers is found. - Abstract: Superlattice is a major force in providing man-made materials with unique properties. Here we report a study of the structural and electronic properties of a superlattice made with alternate stacking of graphene and hexagonal silicene. Three possible stacking models, i.e., the top-, bridge- and hollow-stacking, are considered. The top-stacking is found to be the most stable pattern. Although both the free-standing graphene and silicene are semi-metals, our results suggest that the graphene and silicene layers in the superlattice both exhibit metallic electronic properties due to a small amount of charge transfer from the graphene to the silicene layers. More importantly, the Dirac point of graphene is folded to the Γ-point of the superlattice, instead of the K-point in the isolated graphene. Such a change in the Dirac point of graphene could lead to significant change in the transportation property of the graphene layer. Moreover, the band structure and the charge transfer indicate that the interaction between the stacking sheets in the graphene/silicene superlattice is more than just the van der Waals interaction

Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

Energy Technology Data Exchange (ETDEWEB)

Cho, S; DiVenere, A; Wong, G K; Ketterson, J B; Meyer, J R; Hoffman, C A

1997-07-01

The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

Science.gov (United States)

Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

2018-03-01

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

Interface disorder and transport properties in HTC/CMR superlattices

Energy Technology Data Exchange (ETDEWEB)

Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E

2004-08-01

The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T{sub c} RBa{sub 2}Cu{sub 3}O{sub 7} (RBCO) and colossal magnetoresistance La{sub x}A{sub 1-x}MnO{sub 3} (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La{sub 2/3}Ca{sub 1/3}MnO{sub 3} and GdBCO/La{sub 0.6}Sr{sub 0.04}MnO{sub 3} superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.

2011-11-14

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Electronic structure of superlattices of graphene and hexagonal boron nitride

KAUST Repository

Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

2011-01-01

We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

International Nuclear Information System (INIS)

Yang, G.; Lee, S.; Furdyna, J. K.

2000-01-01

This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

Ordered quantum-ring chains grown on a quantum-dot superlattice template

International Nuclear Information System (INIS)

Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

2012-01-01

One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

The effect of interfacial charge transfer on ferromagnetism in perovskite oxide superlattices

Energy Technology Data Exchange (ETDEWEB)

Yang, F. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Gu, M. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Arenholz, E. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Browning, N. D. [Univ. of California, Davis, CA (United States). Department of Molecular and Cellular Biology; Takamura, Y. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science

2012-01-05

We investigate the structural, magnetic, and electrical properties of superlattices composed of the ferromagnetic/metal La_0.7Sr_0.3MnO₃ and non-magnetic/metal La_0.5Sr_0.5TiO₃ grown on (001)-oriented SrTiO₃ substrates. Using a combination of bulk magnetometry, soft x-ray magnetic spectroscopy, and scanning transmission electron microscopy, we demonstrate that robust ferromagnetic properties can be maintained in this superlattice system where charge transfer at the interfaces is minimized. Thus, ferromagnetism can be controlled effectively through the chemical identity and the thickness of the individual superlattice layers.

Electronic structure of silicon superlattices

International Nuclear Information System (INIS)

Krishnamurthy, S.; Moriarty, J.A.

1984-01-01

Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

Directory of Open Access Journals (Sweden)

C. C. Fan

2017-08-01

Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

Directory of Open Access Journals (Sweden)

A.Y. Polyakov

2017-03-01

Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

Organic p-n heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

2009-07-01

For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

International Nuclear Information System (INIS)

Blumers, Mathias

2012-01-01

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

Structural study of multilayered vanadium/nickel superlattices

International Nuclear Information System (INIS)

Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.

1985-07-01

We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak

InN/GaN Superlattices: Band Structures and Their Pressure Dependence

DEFF Research Database (Denmark)

Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

2013-01-01

Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

Modulating nanoparticle superlattice structure using proteins with tunable bond distributions

International Nuclear Information System (INIS)

McMillan, Janet R.; Brodin, Jeffrey D.; Millan, Jaime A.; Lee, Byeongdu; Olvera de la Cruz, Monica; Mirkin, Chad A.

2017-01-01

Here, we investigate the use of proteins with tunable DNA modification distributions to modulate nanoparticle superlattice structure. Using Beta-galactosidase (βgal) as a model system, we have employed the orthogonal chemical reactivities of surface amines and thiols to synthesize protein-DNA conjugates with 36 evenly distributed or 8 specifically positioned oligonucleotides. When assembled into crystalline superlattices with AuNPs, we find that the distribution of DNA modifications modulates the favored structure: βgal with uniformly distributed DNA bonding elements results in body-centered cubic crystals, whereas DNA functionalization of cysteines results in AB 2 packing. We probe the role of protein oligonucleotide number and conjugate size on this observation, which revealed the importance of oligonucleotide distribution and number in this observed assembly behavior. These results indicate that proteins with defined DNA-modification patterns are powerful tools to control the nanoparticle superlattices architecture, and establish the importance of oligonucleotide distribution in the assembly behavior of protein-DNA conjugates.

RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES

OpenAIRE

Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.

1987-01-01

We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.

Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

Science.gov (United States)

Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

2018-06-01

Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

Single-crystal FCC and DHCP phases in Ce/Pr superlattices

International Nuclear Information System (INIS)

Lee, S.; Goff, J.P.; Ward, R.C.C.; Wells, M.R.; McIntyre, G.J.

2002-01-01

Cerium usually comprises a mixture of polycrystalline FCC and DHCP allotropes. Single-crystal Ce has been stabilised in Ce/Pr superlattices grown using molecular beam epitaxy. It is found that FCC or DHCP phases can be obtained depending on superlattice composition and growth conditions. Low-temperature neutron scattering was performed on Ce/Pr samples using the triple-axis spectrometer D10 at the ILL. Such measurements revealed one sample, [Ce 20 Pr 20 ] 60 , to be a single crystal with a DHCP unit cell; while another, [Ce 30 Pr 10 ] 56 , was a mixture of FCC and DHCP phases. Antiferromagnetic ordering of magnetic moments was observed in the DHCP sample (T N =11.1 K) with a magnetic structure similar to that found in bulk β-Ce. Surprisingly, the magnetic ordering was found to be confined to single Ce blocks. Furthermore, it was found that, at low temperatures, the lattice contraction observed for bulk FCC Ce was suppressed in Ce/Pr superlattices. (orig.)

Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

DEFF Research Database (Denmark)

Gorczyca, I.; Suski, T.; Christensen, Niels Egede

2012-01-01

InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

Manganites in Perovskite Superlattices: Structural and Electronic Properties

KAUST Repository

Jilili, Jiwuer

2016-07-13

Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

Sm cluster superlattice on graphene/Ir(111)

Science.gov (United States)

Mousadakos, Dimitris; Pivetta, Marina; Brune, Harald; Rusponi, Stefano

2017-12-01

We report on the first example of a self-assembled rare earth cluster superlattice. As a template, we use the moiré pattern formed by graphene on Ir(111); its lattice constant of 2.52 nm defines the interparticle distance. The samarium cluster superlattice forms for substrate temperatures during deposition ranging from 80 to 110 K, and it is stable upon annealing to 140 K. By varying the samarium coverage, the mean cluster size can be increased up to 50 atoms, without affecting the long-range order. The spatial order and the width of the cluster size distribution match the best examples of metal cluster superlattices grown by atomic beam epitaxy on template surfaces.

Characterization of band structure for transverse acoustic phonons in Fibonacci superlattices by a bandedge formalism

International Nuclear Information System (INIS)

Hsueh, W J; Chen, R F; Tang, K Y

2008-01-01

We present a divergence-free method to determine the characteristics of band structures and projected band structures of transverse acoustic phonons in Fibonacci superlattices. A set of bandedge equations is formulated to solve the band structures for the phonon instead of using the traditional dispersion relation. Numerical calculations show band structures calculated by the present method for the Fibonacci superlattice without numerical instability, which may occur in traditional methods. Based on the present formalism, the band structure for the acoustic phonons has been characterized by closure points and the projected bandgaps of the forbidden bands. The projected bandgaps are determined by the projected band structure, which is characterized by the cross points of the projected bandedges. We observed that the band structure and projected band structure and their characteristics were quite different for different generation orders and the basic layers for the Fibonacci superlattice. In this study, concise rules to determine these characteristics of the band structure and the projected band structure, including the number and the location of closure points of forbidden bands and those of projected bandgaps, in Fibonacci superlattices with arbitrary generation order and basic layers are proposed.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

Energy Technology Data Exchange (ETDEWEB)

Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

2015-11-15

Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

Directory of Open Access Journals (Sweden)

S. Kowarik

2015-11-01

Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

Thermal conductivity and heat transfer in superlattices

Energy Technology Data Exchange (ETDEWEB)

Chen, G; Neagu, M; Borca-Tasciuc, T

1997-07-01

Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and devices based on quantum structures. This work reports progress on the modeling of thermal conductivity of superlattice structures. Results from the models established based on the Boltzmann transport equation could explain existing experimental results on the thermal conductivity of semiconductor superlattices in both in plane and cross-plane directions. These results suggest the possibility of engineering the interfaces to further reduce thermal conductivity of superlattice structures.

Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

International Nuclear Information System (INIS)

Wang, L.M.; Guo, C.-C.

2005-01-01

The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

1999-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

Exchange bias in Fe/Cr double superlattices

International Nuclear Information System (INIS)

Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

2000-01-01

Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

International Nuclear Information System (INIS)

Lowndes, D.H.; Norton, D.P.

1993-01-01

Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

Energy Technology Data Exchange (ETDEWEB)

Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

2014-01-15

A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

Electronic structure of a graphene superlattice with massive Dirac fermions

International Nuclear Information System (INIS)

Lima, Jonas R. F.

2015-01-01

We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a substrate that opens an energy gap of 2Δ in its electronic structure. We find that extra Dirac points appear in the electronic band structure under certain conditions, so it is possible to close the gap between the conduction and valence minibands. We show that the energy gap E g can be tuned in the range 0 ≤ E g  ≤ 2Δ by changing the periodic potential. We analyze the low energy electronic structure around the contact points and find that the effective Fermi velocity in very anisotropic and depends on the energy gap. We show that the extra Dirac points obtained here behave differently compared to previously studied systems

Hydrostatic pressure and strain effects in short period InN/GaN superlattices

DEFF Research Database (Denmark)

Gorczyca, I.; Suski, T.; Christensen, Niels Egede

2012-01-01

The electronic structures of short-period pseudomorphically grown superlattices (SLs) of the form mInN/nGaN are calculated and the band gap variation with the well and the barrier thicknesses is discussed including hydrostatic pressure effects. The calculated band gap shows a strong dependence...... strongly on the strain conditions and SL geometry, but weakly on the applied external hydrostatic pressure....

Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

NARCIS (Netherlands)

Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

2016-01-01

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

NARCIS (Netherlands)

Casarin, B.; Caretta, A.; Momand, J.; Kooi, B. J.; Verheijen, M.A.; Bragaglia, V.; Calarco, R.; Chukalina, M.; Yu, X.; Robertson, J.; Lange, F.R.L.; Wuttig, M.; Redaelli, A.; Varesi, E.; Parmigiani, F.; Malvestuto, M.

2016-01-01

The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

Electronic structure of superlattices

International Nuclear Information System (INIS)

Altarelli, M.

1987-01-01

Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt

Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy

International Nuclear Information System (INIS)

Giles, N.C.; Yang, Z.; Han, J.W.; Cook, J.W. Jr.; Schetzina, J.F.

1990-01-01

We report the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates by photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a continuous wave Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm 2 and at temperatures ≥60 K

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

International Nuclear Information System (INIS)

Zhang Wei; Xue Jun-Shuai; Zhou Xiao-Wei; Zhang Yue; Liu Zi-Yang; Zhang Jin-Cheng; Hao Yue

2012-01-01

An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 10 19 cm −3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Band structure of ABC-trilayer graphene superlattice

International Nuclear Information System (INIS)

Uddin, Salah; Chan, K. S.

2014-01-01

We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k y direction for k x  = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case

Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

Science.gov (United States)

Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

2017-10-01

InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

MBE growth and characterisation of light rare-earth superlattices

DEFF Research Database (Denmark)

Ward, R.C.C.; Wells, M.R.; Bryn-Jacobsen, C.

1996-01-01

The molecular beam epitaxy growth techniques which have already successfully produced a range of heavy rare-earth superlattices have now been extended to produce superlattices of two light rare-earth elements, Nd/Pr, as well as superlattices and alloy films of a heavy/light system, Ho/Pr. High......-resolution X-ray diffraction analysis shows the Nd/Pr superlattices to be of high structural quality, while the Ho/Pr superlattices are significantly less so. In the Ho/Pr superlattices, Pr is found to retain its bulk dhcp crystal structure even in thin layers (down to 6 atomic planes thick) sandwiched between...... thick layers of hcp Ho. In addition, neutron diffraction studies of the He/Pr superlattices have shown that the helical Ho magnetic order is not coherent through the dhcp Pr layers, in contrast to previous hcp/hcp superlattices Ho/Y, Ho/Lu and Ho/Er. The series of Ho:Pr alloy films has shown structural...

Monolayer atomic crystal molecular superlattices

Science.gov (United States)

Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

2018-03-01

Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

Stability and electronic structure of superlattices (IIIV)n/(IV2)n

International Nuclear Information System (INIS)

Casagrande, D.; Ferraz, A.C.

1996-01-01

Theoretical investigations of atomic relaxation and electronic states have been made for ultrathin superlattices (GaP) n /(Ge 2 ) n , (GaP) n /(Si 2 ) n , (In P) n /(Ge 2 ) n and (In P) n /(Si 2 ) n with period n ≤ 3 in growth directions (001) and (110). The calculations were performed within the momentum-space formalism of the self-consistent ab-initio pseudopotential method and the molecular dynamics approach as proposed by Car and Parrinello. The structures were found to be unstable with respect to the phase separation into the constituent bulk materials. The results for the enthalpy show a metastability as increasing the superlattice period n. The density of nonoctet wrong-bonds play an important role to determine the stability of the structures. (author). 13 refs., 2 figs., 3 tabs

Superlattices in thermoelectric applications

International Nuclear Information System (INIS)

Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN

1994-08-01

The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure

Enhancement of dielectric and ferroelectric properties of PbZrO3/PbTiO3 artificial superlattices

International Nuclear Information System (INIS)

Choi, Taekjib; Lee, Jaichan

2005-01-01

PbZrO 3 (PZO)/PbTiO 3 (PTO) artificial superlattices have been grown on La 0.5 Sr 0.5 CoO 3 (LSCO) (100)/MgO (100) substrate by pulsed laser deposition with various stacking periods from 1 to 100 unit cells. The PZO/PTO artificial lattice exhibited a diffraction pattern characteristic of a superlattice structure, i.e., a main diffraction peak with satellite peaks. The electrical properties of the superlattices were investigated as a function of the stacking period. The dielectric constant and remnant polarization improved on decreasing the stacking periodicity. The dielectric constant of the superlattice reached 800 at a stacking period of 1unit cell/1unit cell (PZO 1 /PTO 1 ), which is larger than that of the single PZT solid-solution film. Moreover, the remnant polarization reached a maximum, 2Pr = 38.7 μC/cm 2 , at a 2-unit-cell stacking period. Progressive enhancement of dielectric constant and remnant polarization in artificial PZO/PTO superlattice was accompanied by expansion of the (100)-plane spacing on decreasing the stacking periodicity. These results suggest that the lattice strain developed in the PZO/PTO superlattice may have influence on dielectric constant and ferroelectric behavior.

Epitaxy, thin films and superlattices

International Nuclear Information System (INIS)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

Epitaxy, thin films and superlattices

Energy Technology Data Exchange (ETDEWEB)

Jagd Christensen, Morten

1997-05-01

This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

Formation of uniform magnetic structures and epitaxial hydride phases in Nd/Pr superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Bryn-Jacobsen, C.; McMorrow, D.F.

1997-01-01

, and that the stacking sequence is coherent over many bilayer repeats. The neutron measurements show that for the hexagonal sites of the dhcp structure, the Nd magnetic order propagates coherently through the Pr, whereas the order on the cubic sites is either suppressed or confined to single Nd blocks. It is also shown...... that the singlet ground state of Pr is perturbed to produce a local moment on the hexagonal sites, so that in some cases there is a uniform magnetic structure throughout the superlattice. These results cast new light on the theory of magnetic interactions in rare-earth superlattices. Within a few months of growth...

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

Rare earth superlattices

International Nuclear Information System (INIS)

McMorrow, D.F.

1997-01-01

A review is given of recent experiments on the magnetism of rare earth superlattices. Early experiments in this field were concerned mainly with systems formed by combining a magnetic and a non-magnetic element in a superlattice structure. From results gathered on a variety of systems it has been established that the propagation of magnetic order through the non-magnetic spacer can be understood mostly on the basis of an RKKY-like model, where the strength and range of the coupling depends on the details of the conduction electron susceptibility of the spacer. Recent experiments on more complex systems indicate that this model does not provide a complete description. Examples include superlattices where the constituents can either be both magnetic, adopt different crystal structures (Fermi surfaces), or where one of the constituents has a non-magnetic singlet ground state. The results from such systems are presented and discussed in the context of the currently accepted model. (au)

Strain distribution and band structure of InAs/GaAs quantum ring superlattice

Science.gov (United States)

Mughnetsyan, Vram; Kirakosyan, Albert

2017-12-01

The elastic strain distribution and the band structure of InAs/GaAs one-layer quantum ring superlattice with square symmetry has been considered in this work. The Green's function formalism based on the method of inclusions has been implied to calculate the components of the strain tensor, while the combination of Green's function method with the Fourier transformation to momentum space in Pikus-Bir Hamiltonian has been used for obtaining the miniband energy dispersion surfaces via the exact diagonalization procedure. The dependencies of the strain tensor components on spatial coordinates are compared with ones for single quantum ring and are in good agreement with previously obtained results for cylindrical quantum disks. It is shown that strain significantly affects the miniband structure of the superlattice and has contribution to the degeneracy lifting effect due to heavy hole-light hole coupling. The demonstrated method is simple and provides reasonable results for comparatively small Hamiltonian matrix. The obtained results may be useful for further investigation and construction of novel devices based on quantum ring superlattices.

Ferroic properties in bi-component perovskites: artificial superlattices and naturally forming compounds

International Nuclear Information System (INIS)

Saha-Dasgupta, T

2014-01-01

The use of four different metal cations in a bi-component perovskite ABO 3 structure with 50 : 50 substitution at A sublattice as well as B sublattice, opens up the door for materials designing, with the aim to improve ferroic properties. This can be achieved following two different routes; one using the concept of artificially grown superlattices with alternating layers of ABO 3 and A′B′O 3 perovskites in a periodic set-up and another, through synthesis of naturally grown bulk double perovskites with ordered arrangement of A and A′ cations, simultaneously with that of B and B′ cations. The tremendous progress in layered deposition techniques as well as advances in solid state chemistry methods, has made both routes equally plausible and an area of much activity. This review summarizes some of the recent progress in this field, with a special emphasis on two computational studies, (i) one on ultra-thin 1–1 superlattices built out of paraelectric and ferroelectric components, showing tunable piezoelectric properties, and (ii) another on CrOs-based double perovskites which show multiferroic behavior, achieved through layered ordering of A and A′ cations. (topical review)

Fine structure of the exciton electroabsorption in semiconductor superlattices

Energy Technology Data Exchange (ETDEWEB)

Monozon, B.S., E-mail: borismonozon@mail.ru [Physics Department, Marine Technical University, 3 Lotsmanskaya Str., 190008 St.Petersburg (Russian Federation); Schmelcher, P. [Zentrum für Optische Quantentechnologien, The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany)

2017-02-15

Wannier-Mott excitons in a semiconductor layered superlattice (SL) are investigated analytically for the case that the period of the superlattice is much smaller than the 2D exciton Bohr radius. Additionally we assume the presence of a longitudinal external static electric field directed parallel to the SL axis. The exciton states and the optical absorption coefficient are derived in the tight-binding and adiabatic approximations. Strong and weak electric fields providing spatially localized and extended electron and hole states, respectively, are studied. The dependencies of the exciton states and the exciton absorption spectrum on the SL parameters and the electric field strength are presented in an explicit form. We focus on the fine structure of the ground quasi-2D exciton level formed by the series of closely spaced energy levels adjacent from the high frequencies. These levels are related to the adiabatically slow relative exciton longitudinal motion governed by the potential formed by the in-plane exciton state. It is shown that the external electric fields compress the fine structure energy levels, decrease the intensities of the corresponding optical peaks and increase the exciton binding energy. A possible experimental study of the fine structure of the exciton electroabsorption is discussed.

Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

Science.gov (United States)

Rodak, L. E.; Korakakis, D.

2011-04-01

This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

Ordered patterns and structures via interfacial self-assembly: superlattices, honeycomb structures and coffee rings.

Science.gov (United States)

Ma, Hongmin; Hao, Jingcheng

2011-11-01

Self-assembly is now being intensively studied in chemistry, physics, biology, and materials engineering and has become an important "bottom-up" approach to create intriguing structures for different applications. Self-assembly is not only a practical approach for creating a variety of nanostructures, but also shows great superiority in building hierarchical structures with orders on different length scales. The early work in self-assembly focused on molecular self-assembly in bulk solution, including the resultant dye aggregates, liposomes, vesicles, liquid crystals, gels and so on. Interfacial self-assembly has been a great concern over the last two decades, largely because of the unique and ingenious roles of this method for constructing materials at interfaces, such as self-assembled monolayers, Langmuir-Blodgett films, and capsules. Nanocrystal superlattices, honeycomb films and coffee rings are intriguing structural materials with more complex features and can be prepared by interfacial self-assembly on different length scales. In this critical review, we outline the recent development in the preparation and application of colloidal nanocrystal superlattices, honeycomb-patterned macroporous structures by the breath figure method, and coffee-ring-like patterns (247 references). This journal is © The Royal Society of Chemistry 2011

Electronic structure and optical properties of (BeTen/(ZnSem superlattices

Directory of Open Access Journals (Sweden)

Caid M.

2016-03-01

Full Text Available The structural, electronic and optical properties of (BeTen/(ZnSem superlattices have been computationally evaluated for different configurations with m = n and m≠n using the full-potential linear muffin-tin method. The exchange and correlation potentials are treated by the local density approximation (LDA. The ground state properties of (BeTen/(ZnSem binary compounds are determined and compared with the available data. It is found that the superlattice band gaps vary depending on the layers used. The optical constants, including the dielectric function ε(ω, the refractive index n(ω and the refractivity R(ω, are calculated for radiation energies up to 35 eV.

Structure of highly perfect semiconductor strained-layer superlattices

International Nuclear Information System (INIS)

Vandenberg, J.M.

1989-01-01

High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

Tunable superlattice in graphene to control the number of Dirac points.

Science.gov (United States)

Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K; Parikh, Pritesh; Grover, Sameer; Sensarma, Rajdeep; Tripathi, Vikram; Sengupta, K; Deshmukh, Mandar M

2013-09-11

Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

Investigation of InAs/GaSb-based superlattices by diffraction methods

Energy Technology Data Exchange (ETDEWEB)

Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

2010-02-15

We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

Science.gov (United States)

Goradia, Chandra; Clark, Ralph; Brinker, David

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Investigation of switching region in superlattice phase change memories

Science.gov (United States)

Ohyanagi, T.; Takaura, N.

2016-10-01

We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

A CPA study of the phonon structure of disordered superlattices

International Nuclear Information System (INIS)

Shijie Xiong; Gendi Pang; Chienhua Tsai.

1985-08-01

The phonon structure of superlattices or modulated alloys with substitutional disorder is studied in the Coherent Phase Approximation (CPA). We consider first the case with diagonal disorder only, by adopting a virtual crystal approximation for the force constants. Then we treat the more complicated case with inclusion of off-diagonal disorder. Numerical examples are also studied in both cases. (author)

Magnetism in lanthanide superlattices

DEFF Research Database (Denmark)

Goff, J.P.; Sarthour, R.S.; McMorrow, D.F.

2000-01-01

Neutron diffraction studies of heavy rare-earth superlattices have revealed the stabilization of novel magnetic phases chat are not present in bulk materials. The most striking result is the propagation of the magnetic ordering through nonmagnetic spacer materials. Here we describe some recent X......-ray magnetic resonant scattering studies of light rare-earth superlattices, which illuminate the mechanism of interlayer coupling, and provide access to different areas of Physics. such as the interplay between superconductivity and magnetism. Magnetic X-ray diffraction is found to be particularly well suited...... to the study of the modulated magnetic structures in superlattices, and provides unique information on the conduction-electron spin-density wave responsible for the propagation of magnetic order. (C) 2000 Elsevier Science B.V. All rights reserved....

Participation of mechanical oscillations in thermodynamics of crystals with superlattice

International Nuclear Information System (INIS)

Jacjimovski K, S.; Mirjanicj Lj, D.; Shetrajchicj P, J.

2012-01-01

The superlattice, consisting of two periodically repeating films, is analyzed in proposal paper. Due to the structural deformations and small thickness, the acoustic phonons do not appear in these structures. The spontaneous appearance of phonons is possible in an ideal structure only. Therefore the thermodynamical analysis of phonon subsystems is the first step in investigations of superlattice properties. Internal energy as well as specific heat will be analyzed, too. Low-temperature behavior of these quantities will be compared to the corresponding quantities of bulk structures and of thin films. The general conclusion is that the main thermodynamic characteristics of superlattices are considerably lower than those of the bulk structure. Consequently, their superconductive characteristics are better than the superconductive characteristics of corresponding bulk structures. Generally considered, the application field of superlattices is wider than that of bulk structures and films. (Author)

Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models.

Science.gov (United States)

Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S

2013-08-21

In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.

Structural simulation of superlattices in lithium aluminates; Simulacion estructural de superredes en aluminatos de litio

Energy Technology Data Exchange (ETDEWEB)

Carrera G, L.M.; Basurto S, R. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

1997-07-01

Among the materials to be used on the tritium generator cover of the future fusion reactors the lithium aluminate ({gamma} - LiAlO{sub 2}) is one of the more studied. In this work it is presented the superlattice structural simulation that presents to {gamma} - LiAlO{sub 2} as main phase and to {alpha} - LiAlO{sub 2} as the secondary phase. The simulation is developed considering that as the two phases present different symmetry ({gamma} - LiAlO{sub 2} is tetrahedral and {alpha} - LiAlO{sub 2} is hexahedral) it is had a superlattice LUCS type (Layered Ultrathin Coherent Structure) that is it presents an structure in coherent ultrathin layers since it is what implicates a lesser energy of formation. (Author)

Scaling properties of optical reflectance from quasi-periodic superlattices

International Nuclear Information System (INIS)

Wu Xiang; Yao Hesheng; Feng Weiguo

1991-08-01

The scaling properties of the optical reflectance from two types of quasi-periodic metal-insulator superlattices, one with the structure of Cantor bars and the other with the structure of Cantorian-Fibonaccian train, have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the hydrodynamic model of electron dynamics and transfer-matrix method, and be taking into account retardation effects, we have presented the formalism of the reflectivity for the superlattices. From our numerical results, we found that the reflection spectra of the quasi-superlattices have a rich structure of self-similarity. The interesting scaling indices, which are related to the fractal dimensions, of the spectra are also discussed for the two kinds of the quasi-superlattices. (author). 10 refs, 7 figs

Electronic properties of superlattices on quantum rings.

Science.gov (United States)

da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

2017-04-26

We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

Scanning tunneling microscope observation and magnetic anisotropy of molecular beam epitaxy-grown Fe/Pt superlattices with (111) and (001) orientations

International Nuclear Information System (INIS)

Yamamoto, S.; Kato, T.; Iwata, S.; Tsunashima, S.; Uchiyama, S.

2004-01-01

The surface morphology and the perpendicular magnetic anisotropy for (001) and (111) oriented [Pt(nML)/Fe(nML)] 10 superlattices were investigated. From in situ scanning tunneling microscope observation, the small grain whose diameter was about 5-10 nm and height was 0.2-0.4 nm, was observed in the Fe(2 ML) surface grown at room temperature on the Pt(111) seed layer, while the surface of the Fe deposited at 150 deg. C was covered with flat terraces and steps. It is found that the (111) oriented films were all in-plane magnetized. On the other hand, the (001) films were in-plane magnetized at room temperature, perpendicular magnetized at 100 deg. C and 150 deg. C

Superlattice design for optimal thermoelectric generator performance

Science.gov (United States)

Priyadarshi, Pankaj; Sharma, Abhishek; Mukherjee, Swarnadip; Muralidharan, Bhaskaran

2018-05-01

We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ‘boxcar’ form, which is now well known to manifest the largest efficiency at a given output power in the ballistic limit. Using the coherent non-equilibrium Green’s function formalism coupled self-consistently with the Poisson’s equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattice with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32–0.46 MW/m 2 at efficiencies between 54%–43% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high zT el   =  6 value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.

Laser induced structural transformation in chalcogenide based superlattices

Energy Technology Data Exchange (ETDEWEB)

Zallo, Eugenio, E-mail: zallo@pdi-berlin.de; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

2016-05-30

Superlattices made of alternating layers of nominal GeTe and Sb{sub 2}Te{sub 3} have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Laser induced structural transformation in chalcogenide based superlattices

International Nuclear Information System (INIS)

Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

2016-01-01

Superlattices made of alternating layers of nominal GeTe and Sb 2 Te 3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

Electronic band structure of magnetic bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

2014-01-01

Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

Superlattice structure of Ce{sup 3+}-doped BaMgF{sub 4} fluoride crystals - x-ray diffraction, electron spin-resonance, and optical investigations

Energy Technology Data Exchange (ETDEWEB)

Yamaga, M.; Hattori, K. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu (Japan); Kodama, N. [Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University, Akita (Japan); Ishizawa, N. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai (Japan)

2001-09-14

The x-ray diffraction patterns for Ce{sup 3+}-doped BaMgF{sub 4} (BMF) crystals suggest the existence of superlattice structure. The superlattice model is consistent with the characterization of the 4f{sup 1} ground state of Ce{sup 3+} as a probe ion using the electron spin-resonance (ESR) technique. The distinct Ce{sup 3+} luminescence spectra with different peak energies and lifetimes also support the superlattice model. Although the detailed superlattice structure could not be analysed using the diffraction spots, a model has been proposed, taking into account the eight Ce{sup 3+} polyhedra with different anion coordinations in the unit cell of the BMF crystal obtained from the ESR experiments. (author)

Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Korakakis, D.

2011-11-01

AlN/GaN short period superlattices are well suited for a number of applications including, but not limited to, digital alloys, intersubband devices, and emitters. In this work, AlN/GaN superlattices with periodicities ranging from 10 to 20 Å have been grown via metal organic vapor phase epitaxy in order to investigate the influence of the interface on the binary alloy growth rates. The GaN growth rate at the interface was observed to decrease with increasing GaN thickness while the AlN growth rate remained constant. This has been attributed to a decrease in the decomposition rate of GaN at the hetero-interface as seen in other III-V hetero-structures.

Investigation of the structural and electronic properties of quantum well superlattices made of CuCl, CuBr and CuI

International Nuclear Information System (INIS)

Badi, F.; Louhibi, S.; Aced, M.R.; Mehnane, N.; Sekkal, N.

2008-05-01

This paper reports first principle investigations of structural and electronic properties of both bulk and superlattice (SL) systems of cuprous halides. The obtained structural data for bulks compares well with literature while data for SL is not compared because unavailable (to our knowledge). The electronic structure of bulks and also of (001) and (110) growth axis superlattices (SLs) are calculated and it is shown that at the reverse of the IV-IV and III-V systems, the (110) growth axis impacts the electronic structure which indicates a great influence of the d-orbital. (author)

Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3Superlattices

KAUST Repository

Liu, Heng-Jui

2015-12-09

© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus. A fascinating model system of optic-driven functionalities has been achieved by artificial superlattices consisting of manganite La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO). With design of different initial strain and orbital states in superlattices, we can even control the photoresistivity of the superlattices in an opposite trend that cannot be achieved in pure single film.

Touching points in the energy band structure of bilayer graphene superlattices

International Nuclear Information System (INIS)

Pham, C Huy; Nguyen, V Lien

2014-01-01

The energy band structure of the bilayer graphene superlattices with zero-averaged periodic δ-function potentials are studied within the four-band continuum model. Using the transfer matrix method, the study is mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows a Dirac-like double-cone shape with the group velocity which is periodic in the potential strength P with the period of π and becomes anisotropic at relatively large P. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity which demonstrates a manifestation of the touching points examined. (paper)

Sodium effect on self-organization of amphiphilic carboxylates: formation of structured micelles and superlattices.

Science.gov (United States)

Rosenlehner, Karin; Schade, Boris; Böttcher, Christoph; Jäger, Christof M; Clark, Timothy; Heinemann, Frank W; Hirsch, Andreas

2010-08-16

Not only the self-aggregation of dendritic polycarboxylates into structurally persistent micelles, but also that of the micelles themselves into superlattices is controlled by alkali-metal counterions and shows a pronounced sodium effect. Our combined experimental and computational work has revealed the formation of superlattices for the first time. The behavior of a variety of amphiphilic carboxylates and the different effects of the alkali cations Li(+), Na(+), and K(+) have been investigated by conductivity measurements, cryogenic transmission electron microscopy (cryo-TEM), and molecular-dynamics (MD) simulations. Together, these show that sodium salts of the amphiphiles give the most stable micelles, followed by lithium and potassium. Our results suggest that ion multiplets in bridging positions, rather than contact ion pairs, are responsible for the enhanced stability and the formation of hexagonally ordered superlattices with sodium counterions. Potassium ions do not form such ion multiplets and cannot therefore induce aggregation of the micelles. This sodium effect has far-reaching consequences for a large number of biological and technical systems and sheds new light on the origin of specific-ion effects.

Topotactic interconversion of nanoparticle superlattices.

Science.gov (United States)

Macfarlane, Robert J; Jones, Matthew R; Lee, Byeongdu; Auyeung, Evelyn; Mirkin, Chad A

2013-09-13

The directed assembly of nanoparticle building blocks is a promising method for generating sophisticated three-dimensional materials by design. In this work, we have used DNA linkers to synthesize nanoparticle superlattices that have greater complexity than simple binary systems using the process of topotactic intercalation-the insertion of a third nanoparticle component at predetermined sites within a preformed binary lattice. Five distinct crystals were synthesized with this methodology, three of which have no equivalent in atomic or molecular crystals, demonstrating a general approach for assembling highly ordered ternary nanoparticle superlattices whose structures can be predicted before their synthesis. Additionally, the intercalation process was demonstrated to be completely reversible; the inserted nanoparticles could be expelled into solution by raising the temperature, and the ternary superlattice could be recovered by cooling.

ZnSe/ZnSeTe Superlattice Nanotips

Directory of Open Access Journals (Sweden)

Young SJ

2010-01-01

Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

International Nuclear Information System (INIS)

Lutsenko, Vadym G.

2008-01-01

Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors; Thermoelektrische Eigenschaften duenner Schichten und Uebergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

Energy Technology Data Exchange (ETDEWEB)

Blumers, Mathias

2012-02-29

The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S{sup 2}.{sigma}/k, where S is the Seebeck-coefficient, {sigma} is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb{sub 1-x}Sr{sub x}Te and Bi{sub 2}(Se{sub x}Te{sub 1-x}){sub 3}, respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, {sigma} and {kappa} parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,{sigma},{kappa}) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

International Nuclear Information System (INIS)

Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

2013-01-01

The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy

DEFF Research Database (Denmark)

Bradshaw, J.; Song, X.J.; Shealy, J.R.

1992-01-01

We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data...... confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models. Journal of Applied...

Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

International Nuclear Information System (INIS)

Jin, Xiuguang; Matsuba, Shunya; Honda, Yosuke; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu

2013-01-01

GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced. - Highlights: • GaAs/GaAsP strained superlattices are excellent candidates for spin-polarized electron beam. • Pulse spin-polarized electron beam is required for investigating the magnetic domain change. • Picosecond electron bunches were achieved from GaAs/GaAsP superlattice photocathode. • TEM observation revealed a small disorder of superlattice layers. • Improvement of superlattice periodicity can achieve much faster electron bunches

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Luna, E.; Satpati, B.; Trampert, A.; Rodriguez, J. B.; Baranov, A. N.; Tournie, E.

2010-01-01

The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g 002 two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

Directory of Open Access Journals (Sweden)

Stefano Cecchi

2017-02-01

Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

Science.gov (United States)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Electronic structure modeling of InAs/GaSb superlattices with hybrid density functional theory

Energy Technology Data Exchange (ETDEWEB)

Garwood, Tristan [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Modine, Normand A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Krishna, S. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

2016-12-18

The application of first-principles calculations holds promise for greatly improving our understanding of semiconductor superlattices. By developing a procedure to accurately predict band gaps using hybrid density functional theory, it lays the groundwork for future studies investigating more nuanced properties of these structures. Our approach allows a priori prediction of the properties of SLS structures using only the band gaps of the constituent materials. Furthermore, it should enable direct investigation of the effects of interface structure, e.g., intermixing or ordering at the interface, on SLS properties. In this paper, we present band gap data for various InAs/GaSb type-II superlattice structures calculated using the generalized Kohn-Sham formulation of density functional theory. A PBE0-type hybrid functional was used, and the portion of the exact exchange was tuned to fit the band gaps of the binary compounds InAs and GaSb with the best agreement to bulk experimental values obtained with 18% of the exact exchange. The heterostructures considered in this study are 6 monolayer (ML) InAs/6 ML GaSb, 8 ML InAs/8 ML GaSb and 10 ML InAs/10 ML GaSb with deviations from the experimental band gaps ranging from 3% to 11%.

Charge superlattice effects on the electronic structure of a model acceptor graphite intercalation compound

International Nuclear Information System (INIS)

Campagnoli, G.; Tosatti, E.

1981-08-01

In the present attempt we have considered a model ordered situation (a super-superlattice) where starting from a basic stoichiometry C 8 X, a fraction 1/3 of the molecules acquire one electron, the remaining 2/3 being left neutral. We have performed an electronic structure calculation using tight-binding plus electrostatic (Hartree) self-consistency

GeTe sequences in superlattice phase change memories and their electrical characteristics

Energy Technology Data Exchange (ETDEWEB)

Ohyanagi, T., E-mail: ohyanagi@leap.or.jp; Kitamura, M.; Takaura, N. [Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan); Araidai, M. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kato, S. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Shiraishi, K. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

2014-06-23

We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.

Novel Si-Ge-C Superlattices for More than Moore CMOS

Science.gov (United States)

2016-03-31

Keywords: Silicon ; Germanium; Carbon; Superlattices; Direct Band-Gaps; Silicon - Photonics ; Image Sensors. Introduction Materials with direct band-gaps and...Wang Z., B. Tian, M. Pantouvaki, et al., “Room- temperature InP distributed feedback laser array directly grown on silicon ”, Nature Photonics 9, 2015...Creek Blvd. Suite 284 San Jose, CA 95129 Contact author: Lynn.Forester@Quantumsemi.com Abstract: The search for Silicon -based direct band-gap

Moiré superlattice-level stick-slip instability originated from geometrically corrugated graphene on a strongly interacting substrate

Science.gov (United States)

Shi, Ruoyu; Gao, Lei; Lu, Hongliang; Li, Qunyang; Ma, Tian-Bao; Guo, Hui; Du, Shixuan; Feng, Xi-Qiao; Zhang, Shuai; Liu, Yanmin; Cheng, Peng; Hu, Yuan-Zhong; Gao, Hong-Jun; Luo, Jianbin

2017-06-01

Two dimensional (2D) materials often exhibit novel properties due to various coupling effects with their supporting substrates. Here, using friction force microscopy (FFM), we report an unusual moiré superlattice-level stick-slip instability on monolayer graphene epitaxially grown on Ru(0 0 0 1) substrate. Instead of smooth friction modulation, a significant long-range stick-slip sawtooth modulation emerges with a period coinciding with the moiré superlattice structure, which is robust against high external loads and leads to an additional channel of energy dissipation. In contrast, the long-range stick-slip instability reduces to smooth friction modulation on graphene/Ir(1 1 1) substrate. The moiré superlattice-level slip instability could be attributed to the large sliding energy barrier, which arises from the morphological corrugation of graphene on Ru(0 0 0 1) surface as indicated by density functional theory (DFT) calculations. The locally steep humps acting as obstacles opposing the tip sliding, originates from the strong interfacial electronic interaction between graphene and Ru(0 0 0 1). This study opens an avenue for modulating friction by tuning the interfacial atomic interaction between 2D materials and their substrates.

Propagation of Nd magnetic phases in Nd/Sm(001) superlattices

International Nuclear Information System (INIS)

Soriano, S; Dufour, C; Dumesnil, K; Stunault, A

2006-01-01

The propagation of Nd long range magnetic order in the hexagonal and cubic sublattices has been investigated in double hexagonal compact Nd/Sm(001) superlattices by resonant x-ray magnetic scattering at the Nd L 2 absorption edge. For a superlattice with 3.7 nm thick Sm layers, the magnetic structure of the hexagonal sublattice propagates coherently through several bilayers, whereas the order in the cubic sublattice remains confined to single Nd blocks. For a superlattice with 1.4 nm thick Sm layers, the magnetic structures of both sublattices appear to propagate coherently through the superlattice. This is the first observation (i) of the long range coherent propagation of Nd order on the cubic sites between Nd blocks and (ii) of a different thickness dependence of the propagation of the Nd magnetic phases associated with the hexagonal and cubic sublattices. The propagation of the Nd magnetic order through Sm is interpreted in terms of generalized susceptibility of the Nd conduction electrons

Magnetic rare earth superlattices

DEFF Research Database (Denmark)

Majkrzak, C.F.; Kwo, J.; Hong, M.

1991-01-01

Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...

Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO{sub 3}/SrTiO{sub 3} Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

Energy Technology Data Exchange (ETDEWEB)

Eiteneer, D. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Pálsson, G.K., E-mail: gunnar.palsson@physics.uu.se [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Nemšák, S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Peter-Grünberg-Institut PGI-6, Forschungszentrum Julich, 52425 Julich (Germany); Gray, A.X. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Kaiser, A.M. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Son, J.; LeBeau, J. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Conti, G. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); and others

2016-08-15

Highlights: • Depth resolved electronic structure of LaNiO{sub 3}/SrTiO{sub 3} superlattices is measured. • The structure is determined by x-ray standing wave angle-resolved photoemission. • Similarity to the electronic structure of La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} is discussed. - Abstract: LaNiO{sub 3} (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO{sub 3} (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d e{sub g} and t{sub 2g} states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our

Tuning the electronic structure of SrTiO3/SrFeO3−x superlattices via composition and vacancy control

Directory of Open Access Journals (Sweden)

Robert F. Berger

2014-04-01

Full Text Available Using density functional theory-based calculations, we explore the effects of oxygen vacancies and epitaxial layering on the atomic, magnetic, and electronic structure of (SrTiO3n(SrFeO3−x1 superlattices. While structures without oxygen vacancies (x = 0 possess small or non-existent band gaps and ferromagnetic ordering in their iron layers, those with large vacancy concentrations (x = 0.5 have much larger gaps and antiferromagnetic ordering. Though the computed gaps depend numerically on the delicate energetic balance of vacancy ordering and on the value of Hubbard U eff used in the calculations, we demonstrate that changes in layering can tune the band gaps of these superlattices below that of SrTiO3 (3.2 eV by raising their valence band maxima. This suggests the possibility that these superlattices could absorb in the solar spectrum, and could serve as water-splitting photocatalysts.

A possible radiation-resistant solar cell geometry using superlattices

Science.gov (United States)

Goradia, C.; Clark, R.; Brinker, D.

1985-01-01

A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

Computer simulation of the anomalous elastic behavior of thin films and superlattices

International Nuclear Information System (INIS)

Wolf, D.

1992-10-01

Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of thin films and superlattices (the so-called supermodulus effect). The investigation of free-standing thin films and of superlattices of grain boundaries shows that the supermodulus effect is not an electronic but a structural interface effect intricately connected with the local atomic disorder at the interfaces. The consequent predictions that (1) coherent strained-layer superlattices should show the smallest elastic anomalies and (2) the introduction of incoherency at the interfaces should enhance all anomalies are validated by simulations of dissimilar-material superlattices. 38 refs, 10 figs

Perovskite Superlattices as Tunable Microwave Devices

Science.gov (United States)

Christen, H. M.; Harshavardhan, K. S.

2003-01-01

Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.

Disorder influence on the magnetic properties of La0.55Sr0.45MnO3/SrTiO3 superlattices

International Nuclear Information System (INIS)

Haberkorn, N.; Sirena, M.; Guimpel, J.; Steren, L.B.

2004-01-01

The structural and physical properties of La 0.55 Sr 0.45 MnO 3 /SrTiO 3 superlattices grown by magnetron sputtering are studied. Two deposition temperatures and different mismatched substrates and buffer layers were used. The structure was determined by refinement through X-ray diffraction pattern fitting. The results indicate 1 unit cell (u.c.) interdiffusion at the interfaces and a 1 u.c. layer thickness fluctuation, i.e. roughness. In-plane hysteresis loops show the expected ferromagnetic behavior, while the perpendicular-to-plane hysteresis loops show anomalies which could evidence magnetic domain size inhomogeneities and stress

Electronic properties of a new structured Sin/O superlattice

Directory of Open Access Journals (Sweden)

S. Yu

2016-11-01

Full Text Available Silicon is a material which dominants the semiconductor industry and has a well-established processing technology based on it. However, silicon has an indirect-bandgap and is not efficient in light emitting. This limits its applications in optoelectronics. In this paper, we proposed a new structural model for the silicon-based superlattice, i.e., the Sin/O one. The model consists of alternating films of n-layers of Si and a monolayer of oxygen along z-direction, together with a surface cell of Si(001 (2×1 reconstruction in the x-y plane. The importance of employing such a Si(001 (2×1 reconstruction is that all the electrons at interface can be strongly bonded. Our results showed interesting electronic properties, e.g., the band folding and large band gap of bulk Si, when the thickness of the silicon layers was increased (but still thin. Our structure might also offer other interesting properties.

Molecular dynamics simulation of thermal conductivities of superlattice nanowires

Institute of Scientific and Technical Information of China (English)

YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)

2003-01-01

Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.

Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

Science.gov (United States)

Yusuf, Mohammed; Du, Xu; Dawber, Matthew

2013-03-01

Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

Science.gov (United States)

Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

2018-05-01

The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

Science.gov (United States)

Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

2017-06-01

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

Theoretical study of nitride short period superlattices

Science.gov (United States)

Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

2018-02-01

Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

Science.gov (United States)

Hsing, Greg Hsiang-Chun

Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

International Nuclear Information System (INIS)

Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

2013-01-01

P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

Planar channeling in superlattices: Theory

International Nuclear Information System (INIS)

Ellison, J.A.; Picraux, S.T.; Allen, W.R.; Chu, W.K.

1988-01-01

The well-known continuum model theory for planar channeled energetic particles in perfect crystals is extended to layered crystalline structures and applied to superlattices. In a strained-layer structure, the planar channels with normals which are not perpendicular to the growth direction change their direction at each interface, and this dramatically influences the channeling behavior. The governing equation of motion for a planar channeled ion in a strained-layer superlattice with equal layer thicknesses is a one degree of freedom nonlinear oscillator which is periodically forced with a sequence of δ functions. These δ functions, which are of equal spacing and amplitude with alternating sign, represent the tilts at each of the interfaces. Thus upon matching an effective channeled particle wavelength, corresponding to a natural period of the nonlinear oscillator, to the period of the strained-layer superlattice, corresponding to the periodic forcing, strong resonance effects are expected. The condition of one effective wavelength per period corresponds to a rapid dechanneling at a well-defined depth (catastrophic dechanneling), whereas two wavelengths per period corresponds to no enhanced dechanneling after the first one or two layers (resonance channeling). A phase plane analysis is used to characterize the channeled particle motion. Detailed calculations using the Moliere continuum potential are compared with our previously described modified harmonic model, and new results are presented for the phase plane evolution, as well as the dechanneling as a function of depth, incident angle, energy, and layer thickness. General scaling laws are developed and nearly universal curves are obtained for the dechanneling versus depth under catastrophic dechanneling

Microwave properties of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

International Nuclear Information System (INIS)

Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

1992-01-01

We have used non-resonant microwave absorption to study c-axis YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ superlattices and compare the response to a film of similarly grown YBa 2 Cu 3 O 7-δ (YBCO). Near the respective transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependences. This is consistent with the microwave loss being related to magnetic flux penetration at (110) slip planes. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependences, which we attribute to the role of the PrBa 2 Cu 3 O 7-δ layers. (orig.)

Tunneling in quantum superlattices with variable lacunarity

Energy Technology Data Exchange (ETDEWEB)

Villatoro, Francisco R. [Departamento de Lenguajes y Ciencias de la Computacion, Universidad de Malaga, E-29071 Malaga (Spain); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, E-46022 Valencia (Spain)], E-mail: jmonsori@fis.upv.es

2008-05-19

Fractal superlattices are composite, aperiodic structures comprised of alternating layers of two semiconductors following the rules of a fractal set. The scattering properties of polyadic Cantor fractal superlattices with variable lacunarity are determined. The reflection coefficient as a function of the particle energy and the lacunarity parameter present tunneling curves, which may be classified as vertical, arc, and striation nulls. Approximate analytical formulae for such curves are derived using the transfer matrix method. Comparison with numerical results shows good accuracy. The new results may be useful in the development of band-pass energy filters for electrons, semiconductor solar cells, and solid-state radiation sources up to THz frequencies.

Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

International Nuclear Information System (INIS)

Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

2006-01-01

New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500mAh, AAA size type 900mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material. alized by using an improved superlattice alloy for negative electrode material. (author)

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Energy Technology Data Exchange (ETDEWEB)

Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

2013-12-21

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

International Nuclear Information System (INIS)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-01-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

Science.gov (United States)

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2013-12-01

The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

Thermoelectric efficiency of IV-VI multiple quantumwell and superlattice systems

International Nuclear Information System (INIS)

Beyer, H.

2001-09-01

In this thesis the thermoelectric properties of PbTe-based multiple quantum well (MQW) and superlattice (SL) structures grown by molecular beam epitaxy (MBE) are investigated. The two approaches for an enhancement of the dimensionless thermoelectric figure of merit ZT = σS 2 T/λ (σ: electric conductivity, S: Seebeck coefficient, λ: thermal conductivity, T: temperature) in low dimensional structures are discussed: an enhancement of the two dimensional (2D) power factor σS 2 2D due to carrier confinement or a reduction of the thermal conductivity due to a modified phonon dispersion and stronger phonon scattering in layered structures. The novel PbTe/Pb 1-x Sr x Te-MQW system is investigated for a rise of the 2D power factor σS 2 2D . A detailed analysis of optical and electronic parameters based on infrared transmission spectra is performed. Only a small rise of the 2D power factor σS 2 2D for the MQW's compared to homogeneous epitaxial PbTe-layers is found. This smaller σS 2 2D -rise compared to first predictions for ideal MQW's is related to the finite barrier height and effects like lifting of the valley degeneracy or enhanced carrier scattering. However, a strong reduction of the thermal conductivity is found in MQW structures resulting in 2D ZT values between 0.5 and 1.0 at T = 300 K and up to 1.6 at T = 550 K. For the use in technical applications the three dimensional (3D) figure of merit of the whole structure ZT 3D must be raised. Different novel PbTe-based superlattice structures are investigated with respect to a 3D ZT-increase due to thermal conductivity reduction. ZT 3D -values of 0.33 for p-type PbTe-doping superlattices and of 0.45 at T = 300 K for PbTe/PbSe 20 Te 80 -SL's are determined (T = 300 K; n-PbTe: ZT max = 0.36, p-PbTe: ZT max = 0.30). Maximum ZT-values up to 1.25 for PbTe/PbSe 20 Te 80 -SL's and 1.20 for PbTe-doping SL's are estimated for temperatures between 450 K and 550 K. These values show the potential of these structures for

Structural, electronic properties and enhancement of electrical polarization in Er2NiMnO6/La2NiMnO6 superlattice by first-principles calculations

Directory of Open Access Journals (Sweden)

Haipeng Lu

2016-03-01

Full Text Available Employing first-principles calculations, structural, electronic properties of new multiferroic material Er2NiMnO6/La2NiMnO6 perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr2NiMnO7 structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

Propagation and generation of Josephson radiation in superconductor/insulator superlattices

International Nuclear Information System (INIS)

Auvil, P.R.; Ketterson, J.B.

1987-01-01

The wave propagation and generation characteristics of a metal-insulator superlattice are calculated in a low-field Landau--Ginzburg model, including Josephson coupling through the insulating layers. It is shown that a significant increase in the phase velocity of the electromagnetic waves propagating in the superlattice occurs when the thickness of the superconducting layers becomes much less than the London penetration depth, suggesting that increased output of Josephson radiation may be achieved from such structures. Wave generation via the ac Josephson effect (in the presence of applied dc electric and magnetic fields) is studied for both parallel and series driven multilayer structures

Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

Energy Technology Data Exchange (ETDEWEB)

Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

2015-06-15

Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Optical absorption in planar graphene superlattice: The role of structural parameters

Science.gov (United States)

Azadi, L.; Shojaei, S.

2018-04-01

We theoretically studied the optically driven interband transitions in a planar graphene superlattices (PGSL) formed by patterning graphene sheet on laterally hetrostructured substrate as Sio2/hBN. A tunable optical transitions between minibands is observed based on engineering structural parameters. We derive analytically expression for optical absorption from two-band model. Considerable optical absorption is obtained for different ratios between widths of heterostructured substrate and is explained analytically from the view point of wavefunction engineering and miniband dispersion, in details. The role of different statuses of polarization as circular and linear are considered. Our study paves a way toward the control of optical properties of PGSLs to be implemented in optoelectronics devices.

Spontaneous Superlattice Formation in Nanorods through PartialCation Exchange

Energy Technology Data Exchange (ETDEWEB)

Robinson, Richard D.; Sadtler, Bryce; Demchenko, Denis O.; Erdonmez, Can K.; Wang, Lin-Wang; Alivisatos, A. Paul

2007-03-14

Lattice mismatch strains are widely known to controlnanoscale pattern formation in heteroepitaxy, but such effects have notbeen exploited in colloidal nanocrystal growth. We demonstrate acolloidal route to synthesizing CdS-Ag2S nanorod superlattices throughpartial cation exchange. Strain induces the spontaneous formation ofperiodic structures. Ab initio calculations of the interfacial energy andmodeling of strain energies show that these forces drive theself-organization. The nanorod superlattices exhibit high stabilityagainst ripening and phase mixing. These materials are tunablenear-infrared emitters with potential applications as nanometer-scaleoptoelectronic devices.

On the structure of the incommensurate superlattices of 2H - TaSe2

International Nuclear Information System (INIS)

Withers, R.L.; Bursill, L.A.

1979-01-01

Reinterpretation of the neutron diffraction study of 2H-TaSe 2 by Moncton, Axe and DiSalvo (1977) reveals an ambiguity in the sense of the displacements proposed for the commensurate superlattice structure. An attempt is made to resolve this ambiguity by electrostatic and short-range energy calculations of the phase dependence of the energy of the periodic structural distortion wave. There is a fine balance between Se-Se short range repulsion, Ta-Se electrostatic and short-range repulsion and the CDW-Ta ion interaction energy terms. The analysis reveals the phase dependence of the various terms and allows the different contributions to the stability of the distortion waves to be discussed more completely than previously

Magnetic modes in superlattices

International Nuclear Information System (INIS)

Oliveira, F.A.

1990-04-01

A first discussion of reciprocal propagation of magnetic modes in a superlattice is presented. In the absence of an applied external magnetic field a superllatice made of alternate layers of the type antiferromagnetic-non-magnetic materials presents effects similar to those of phonons in a dielectric superlattice. (A.C.A.S.) [pt

X-ray diffraction of multilayers and superlattices

International Nuclear Information System (INIS)

Bartels, W.J.; Hornstra, J.; Lobeek, D.J.W.

1986-01-01

Recursion formulae for calculating the reflected amplitude ratio of multilayers and superlattices have been derived from the Takagi-Taupin differential equations, which describe the dynamical diffraction of X-rays in deformed crystals. Calculated rocking curves of complicated layered structures, such as non-ideal superlattices on perfect crystals, are shown to be in good agreement with observed diffraction profiles. The kinematical theory can save computing time only in the case of an ideal superlattice, for which a geometric series can be used, but the reflections must be below 10% so that multiple reflections can be neglected. For a perfect crystal of arbitrary thickness the absorption at the center of the dynamical reflection is found to be proportional to the square root of the reflectivity. Sputter-deposited periodic multilayers of tungsten and carbon can be considered as an artificial crystal, for which dynamical X-ray diffraction calculations give results very similar to those of a macroscopic optical description in terms of the complex index of refraction and Fresnel reflection coefficients. (orig.)

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001 Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

Directory of Open Access Journals (Sweden)

Ludovico Megalini

2018-02-01

Full Text Available We report on the use of InGaAsP strain-compensated superlattices (SC-SLs as a technique to reduce the defect density of Indium Phosphide (InP grown on silicon (InP-on-Si by Metal Organic Chemical Vapor Deposition (MOCVD. Initially, a 2 μm thick gallium arsenide (GaAs layer was grown with very high uniformity on exact oriented (001 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2 stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD; atomic force microscopy (AFM; transmission electron microscopy (TEM; and electron channeling contrast imaging (ECCI; which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

POSITION AND CHARACTER (Ɖ OR X) OF ENERGY STATES IN SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATTICES

OpenAIRE

Nagle , J.; Garriga , M.; Stolz , W.; Isu , T.; Ploog , K.

1987-01-01

We have grown a series of (GaAs)m(AlAs)n short period superlattices by molecular beam epitaxy including samples with m=n and m≠n. Low temperature photoluminescence, excitation spectroscopy and ellipsometry measurements have been performed to determine the positions and origins of the different electronic states.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

Energy Technology Data Exchange (ETDEWEB)

Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

2015-05-11

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

International Nuclear Information System (INIS)

Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

2015-01-01

In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

International Nuclear Information System (INIS)

Wang Longxiang; Yang Xiangbo; Chen Tongsheng

2009-01-01

In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

Achievement of tailored laser frequencies by fine-tuning the structural parameters of Fibonacci's in AlxGa1-xAs/GaAs superlattices

Science.gov (United States)

Sefir, Yamina; Aziz, Zoubir; Djelti, Redouan; Bouadjemi, Bouabdellah; Bentata, Samir

2013-10-01

We investigate the tunneling conduction in AlxGa1-xAs/GaAs Fibonacci superlattices. Using the transfer matrix formalism, the effective mass and envelope function approximations, we calculate the transmission coefficient of quasiperiodic multibarrier system. We examine numerically the effect of the Fibonacci's structural parameters on the electronic energy spectra of Fibonacci Superlattices (FSL). Ours results show that increasing the width of Fibonacci's wells af allows to the confinement of subminibands with a widening of minigaps, this causes a consistent and coherent fragmentation. The barrier thickness of Fibonacci bf acts on the width of subminibands by controlling the interaction force between neighboring eigenstates. Its increase gives rise to singularly extended states. The barrier height Fibonacci Vf permit to control the degree of structural disorder in these structures. The variation of these parameters permits the design of laser with modulated wavelength.

Superlattice Structures, Electronic Properties, and Spin Dynamics of the Partially Cu-Extracted Phase for the Composite Crystal System CuxV4O11

Science.gov (United States)

Onoda, Masashige; Tamura, Asato

2017-02-01

The crystal structures, electronic properties, and spin dynamics of CuxV4O11 with 1.2 ≤ x electron paramagnetic resonance. This system has superlattice structures mainly ascribed to the partial ordering of Cu ions. Cu1.78V4O11 is triclinic with space group Pbar{1} and the double supercell of the V4O11 substructure of the composite crystal. The significantly Cu-extracted crystal Cu1.40V4O11 has a quadruple supercell with space group P1. The electron transport for V ions is nonmetallic owing to the polaronic nature and/or phonon softening and to the random potential of Cu ions. The Curie-Weiss-type paramagnetism basically originates from the Cu2+ chain coordinated octahedrally, and the EPR relaxation at low temperatures is understood through the exchange mechanism for the dipole-dipole and anisotropic exchange interactions. The near absence of paramagnetic behaviors of V4+ ions might be due to the spin-singlet ladder model or alternating-exchange chain model depending on the superlattice structure and valence distribution. The electrochemical performance of Li rechargeable batteries using this superlattice system is about 300 A h kg-1 at voltages above 2 V.

Design of band pass filter in a modulated magnetic graphene superlattice

International Nuclear Information System (INIS)

Lu, Wei-Tao; Li, Wen

2015-01-01

Electronic transport of graphene through a modulated magnetic superlattice where the barrier heights present Gaussian profile is studied. It is found that the incident electron could be completely transmitted in the miniband regions and be completely reflected in the bandgap regions. The results suggest an application of the structure as an effectively band pass filter, which can be controlled by the structural parameters. It is concluded that the positions of miniband and bandgap are robust to the Gaussian variation of barrier heights. The effect of this modulated magnetic superlattice is also available for the conventional electrons described by Schrödinger equation

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

International Nuclear Information System (INIS)

Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

2002-01-01

Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

Ab initio study of thermoelectric properties of doped SnO_2 superlattices

International Nuclear Information System (INIS)

Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

2015-01-01

Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

OpenAIRE

Ji, Pengfei; Zhang, Yuwen; Yang, Mo

2016-01-01

The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

International Nuclear Information System (INIS)

Fong, C Y; Qian, M C

2004-01-01

The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

Engineering the oxygen coordination in digital superlattices

Science.gov (United States)

Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong; Rosenberg, Richard A.; Marks, Laurence D.; Fong, Dillon D.

2017-12-01

The oxygen sublattice in complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using synchrotron X-ray scattering in combination with soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, with higher Co oxidation states increasing the valence band maximum. This work demonstrates a new strategy for engineering unique electronic structures in the transition metal oxides using short-period superlattices.

Emergence of the sub-THz central peak at phase transitions in artificial BaTiO3/(Ba,Sr)TiO3 superlattices

International Nuclear Information System (INIS)

Tikhonov, Yu.A.; Razumnaya, A.G.; Torgashev, V.I.; Zakharchenko, I.N.; Yuzyuk, Yu.I.; El Marssi, M.; Ortega, N.; Kumar, A.; Katiyar, R.S.

2015-01-01

A prominent central peak in the sub-THz frequency range was observed in the Raman spectra of BaTiO 3 /(Ba,Sr)TiO 3 (BT/BST) superlattice grown on (001)MgO substrate. Both soft and central mode show an anomaly around 200 K and 280 K, which can be correlated with orthorhombic to monoclinic phase transition of BST and BT, respectively. The observed temperature dependence of the central mode enabled us to explain rather broad temperature dependence of the dielectric permittivity previously observed in BT/BST superlattices. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Coherent light from E-field induced quantum coupling of exciton states in superlattice-like quantum wells

DEFF Research Database (Denmark)

Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher

1999-01-01

Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investig......Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....

Magnetoresistance oscillations of two-dimensional electron systems in lateral superlattices with structured unit cells

Science.gov (United States)

Gerhardts, Rolf R.

2015-11-01

Model calculations for commensurability oscillations of the low-field magnetoresistance of two-dimensional electron systems (2DES) in lateral superlattices, consisting of unit cells with an internal structure, are compared with recent experiments. The relevant harmonics of the effective modulation potential depend not only on the geometrical structure of the modulated unit cell, but also strongly on the nature of the modulation. While higher harmonics of an electrostatically generated surface modulation are exponentially damped at the position of the 2DES about 90 nm below the surface, no such damping appears for strain-induced modulation generated, e.g., by the deposition of stripes of calixarene resist on the surface before cooling down the sample.

Disorder influence on the magnetic properties of La{sub 0.55}Sr{sub 0.45}MnO{sub 3}/SrTiO{sub 3} superlattices

Energy Technology Data Exchange (ETDEWEB)

Haberkorn, N. E-mail: nhaberk@cab.cnea.gov.ar; Sirena, M.; Guimpel, J.; Steren, L.B

2004-05-01

The structural and physical properties of La{sub 0.55}Sr{sub 0.45}MnO{sub 3}/SrTiO{sub 3} superlattices grown by magnetron sputtering are studied. Two deposition temperatures and different mismatched substrates and buffer layers were used. The structure was determined by refinement through X-ray diffraction pattern fitting. The results indicate 1 unit cell (u.c.) interdiffusion at the interfaces and a 1 u.c. layer thickness fluctuation, i.e. roughness. In-plane hysteresis loops show the expected ferromagnetic behavior, while the perpendicular-to-plane hysteresis loops show anomalies which could evidence magnetic domain size inhomogeneities and stress.

Kinetic Monte Carlo simulation of phase-precipitation versus instability behavior in short period FeCr superlattices

Energy Technology Data Exchange (ETDEWEB)

Rodríguez-Martínez, F.J. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castejón-Mochón, J.F., E-mail: jfcastejon@ucam.edu [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castrillo, P.; Berenguer-Vidal, R. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Dopico, I.; Martin-Bragado, I. [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe (Madrid) (Spain)

2017-02-15

The structural evolution of FeCr superlattices has been studied using a quasi-atomistic Object Kinetic Monte Carlo model. Superlattices with different spatial periods have been simulated for anneal durations from few hours to several months at 500 °C. Relatively-long period superlattices stabilize into Fe-rich and Cr-rich layers with compositions close to those of bulk α and α′ phases. In contrast, superlattices with very short periods (4, 5, 6 nm) are observed to undergo instability and, for long annealing times, evolve into three-dimensionally decomposed regions, in qualitative agreement to recent experimental observations. The instability onset is delayed as the spatial period increases, and it occurs via interface roughness. This evolution can be explained as a minimization of the free-energy associated to the α/α′ interfaces. A comprehensive description of the evolution dynamics of FeCr-based structures is obtained with our model.

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

Science.gov (United States)

Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

2014-12-21

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

Thermal Conductivity of Graphene-hBN Superlattice Ribbons.

Science.gov (United States)

Felix, Isaac M; Pereira, Luiz Felipe C

2018-02-09

Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.

Magneto-transport studies of InAs/GaSb short period superlattices

International Nuclear Information System (INIS)

Broadley, Victoria Jane

2002-01-01

This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices in the presence of strong electric and magnetic fields applied parallel to the growth axis. Electrical transport parallel to the growth axis occurs through the superlattice miniband, which have widths varying from three to 30meV. Resonant scattering between confined Landau levels and Stark levels is observed at low temperatures (4.2K). In addition LO-phonon assisted scattering between Landau levels is observed in both type-I GaAs/AIAs and type-ll inAs/GaSb superlattices, which are enhanced in the type-ll system due to the strong interband coupling. K·p band structure calculations show that the interband coupling causes the superlattice miniband energy dispersion to be strongly dependent on the in-plane wavevector and the applied magnetic field. For large applied electric fields, where the miniband is split into discrete Stark levels, strong stark-cyclotron resonance (SCR) features are observed, which occur when the Landau level separation equals to the stark level separation. These resonances are enhanced when compared to SCR in type-I superlattices due to the suppression of miniband conduction in higher lying Landau levels. At low electric fields electrical transport through the superlattice miniband yields characteristic miniband transport features, which are modelled using the Esaki-Tsu miniband transport model. Strong electron - LO-phonon scattering is also observed in InAs/GaSb superlattices, where we report the first observation of miniband transport assisted via the emission of LO-phonons between stark levels in adjacent wells. Below 50K thermally activated behaviour is reported and at high magnetic fields (in the quantum limit) complete localisation of carriers is observed. In this regime LO-phonon delocalised transport in also observed. (author)

Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

Science.gov (United States)

Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500 mAh, AAA size type 900 mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material.

Anisotropic behavior of quantum transport in graphene superlattices

DEFF Research Database (Denmark)

Pedersen, Jesper Goor; Cummings, Aron W.; Roche, Stephan

2014-01-01

We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multi......We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength...

Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

Energy Technology Data Exchange (ETDEWEB)

Wagner, Jan-Martin

2004-10-14

In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

Science.gov (United States)

Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Basu, Palash Kumar; Bhattacharjee, K.

2018-05-01

Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS2 layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS2. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS2 sheets.

Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

2015-11-15

Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

Transport properties of YBa2Cu3O7/PrBa2Cu3O7-superlattices

International Nuclear Information System (INIS)

El Tahan, Ayman Mohamed Moussa

2010-01-01

occurrence of a crossover from elastic (collective) vortex creep at low temperature to plastic vortex creep at high T. The second type of transport experiments was to measure directly a possible Josephson coupling between superconducting CuO 2 double planes in the superlattices by investigation of the transport properties perpendicular to the superconducting planes. Here three different experiments have been performed. The first one was to pattern mesa structures photolithographically as in previous works. The second used three-dimensional nanostructures cut by a focused ion beam. A third experiment used a-axis and (110) oriented YBCO films, where in-plane patterning can in principle be sufficient to measure transport perpendicular to the superconducting planes. Therefore the deposition of films with this unusual growth orientation was optimized and investigated. The structural and microstructural evolution of c-axis to a-axis orientation was monitored using X-ray diffraction, scanning electron microscopy and magnetization measurements. Films with full a-axis alignment parallel to the substrate normal could be achieved on (100)SrTiO 3 . Transferring the deposition conditions to films grown on (110)SrTiO 3 allowed the growth of (110) oriented YBCO films with a unique in-plane c-axis orientation. While these films were of high quality by crystallographic and macroscopic visual inspection, electron microscopy revealed a coherent crack pattern on a nanoscale. (orig.)

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Miller, C. M.; Korakakis, D.

2011-01-01

Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

Plasmon Modes of Vertically Aligned Superlattices

DEFF Research Database (Denmark)

Filonenko, Konstantin; Duggen, Lars; Willatzen, Morten

2017-01-01

By using the Finite Element Method we visualize the modes of vertically aligned superlattice composed of gold and dielectric nanocylinders and investigate the emitter-plasmon interaction in approximation of weak coupling. We find that truncated vertically aligned superlattice can function...

Structural Reliability of the Nigerian Grown Abura Timber Bridge ...

African Journals Online (AJOL)

Structural reliability analysis was carried out on the Nigerian grown Abura timber, to ascertain its structural performance as timber bridge beams. Samples of the Nigerian grown Abura timber were bought from timber market, seasoned naturally and their structural/strength properties were determined at a moisture content of ...

Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

Directory of Open Access Journals (Sweden)

James (Zi-Jian Ju

2016-04-01

Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

Energy Technology Data Exchange (ETDEWEB)

Sugawara, Yoshihiro; Ishikawa, Yukari, E-mail: yukari@jfcc.or.jp [Japan Fine Ceramics Center, Atsuta, Nagoya, 456-8587 (Japan); Watanabe, Arata [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Miyoshi, Makoto; Egawa, Takashi [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technoloy, Nagoya, 466-8555 (Japan)

2016-04-15

The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

Optical transmission through multi-component generalized Thue-Morse superlattices

Energy Technology Data Exchange (ETDEWEB)

Zhang Guogang [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Yang Xiangbo, E-mail: xbyang@scnu.edu.c [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Li Yuhong; Song Huanhuan [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China)

2010-09-01

In this paper, by the three kinds of basic components (BCs) of three-component Thue-Morse (3CTM) sequence we construct a type of interesting optical basic-structural-units (BSUs) and propose multi-component generalized Thue-Morse (mCGTM) model. Based on the conventional electromagnetic wave theory we investigate the optical transmission vertically through the one-dimensional (1D) mCGTM superlattices. It is found that the optical transmission possesses an interesting pseudo-constant characteristic at the central wavelength. mCGTM sequence exhibits a cantor-set structure which results in the system possessing certain kinds of effective component pairs (ECPs), and each kind of ECP brings about certain contribution towards the optical transmission. The cantor-set structure is the reason that mCGTM multilayers exhibit the optical transmission pseudo-constant property. For the pseudo-constant optical transmission of mCGTM superlattices, there would be a potential application in the designing of some complex optical devices.

Structural, electronic properties and enhancement of electrical polarization in Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} superlattice by first-principles calculations

Energy Technology Data Exchange (ETDEWEB)

Lu, Haipeng; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); Sun, Xun, E-mail: sunxunphy@hotmail.com; Hou, Zhihua; Yang, Wen; Wang, Siyuan; Xie, Jianliang [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China)

2016-03-15

Employing first-principles calculations, structural, electronic properties of new multiferroic material Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr{sub 2}NiMnO{sub 7} structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

Spectral properties of waves in superlattices with 2D and 3D inhomogeneities

International Nuclear Information System (INIS)

Ignatchenko, V. A.; Tsikalov, D. S.

2011-01-01

We investigate the dynamic susceptibility and one-dimensional density of states in an initially sinusoidal superlattice containing simultaneously 2D phase inhomogeneities simulating correlated rough-nesses of superlattice interfaces and 3D amplitude inhomogeneities of the superlattice layer materials. The analytic expression for the averaged Green’s function of the sinusoidal superlattice with two phase inhomogeneities is derived in the Bourret approximation. It is shown that the effect of increasing asymmetry in the peak heights of dynamic susceptibility at the Brillouin zone boundary of the superlattice, which was discovered earlier [15] upon an increase in root-mean-square (rms) fluctuations, also takes place upon an increase in the correlation wavenumber of inhomogeneities. However, the peaks in this case also become closer, and the width and depth of the gap in the density of states decrease thereby. It is shown that the enhancement of rms fluctuations of 3D amplitude inhomogeneities in a superlattice containing 2D phase inhomogeneities suppresses the effect of dynamic susceptibility asymmetry and leads to a slight broadening of the gap in the density of states and a decrease in its depth. Targeted experiments aimed at detecting the effects studied here would facilitate the development of radio-spectroscopic and optical methods for identifying the presence of inhomogeneities of various dimensions in multilayer magnetic and optical structures.

Current responsivity of semiconductor superlattice THz-photon detectors

DEFF Research Database (Denmark)

Ignatov, Anatoly A.; Jauho, Antti-Pekka

1999-01-01

The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

Science.gov (United States)

Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

2017-05-25

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

Directory of Open Access Journals (Sweden)

Lianbi Li

2017-05-01

Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

Tunneling of electrons through semiconductor superlattices

Indian Academy of Sciences (India)

Unknown

Tunneling of electrons through semiconductor superlattices. C L ROY. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semicon- ductor superlattices (SSL); specially, we have ...

Photostimulated attenuation of hypersound in superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.; Adjepong, S.K.

1992-10-01

Photostimulated attenuation of hypersound in semiconductor superlattice has been investigated. It is shown that the attenuation coefficient depends on the phonon wave vector q in an oscillatory manner and that from this oscillation the band width Δ of superlattice can be found. (author). 14 refs, 1 fig

Magnetic profiles in ferromagnetic/superconducting superlattices.

Energy Technology Data Exchange (ETDEWEB)

te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

2007-02-28

The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

Free-Standing Metal Oxide Nanoparticle Superlattices Constructed with Engineered Protein Containers Show in Crystallo Catalytic Activity.

Science.gov (United States)

Lach, Marcel; Künzle, Matthias; Beck, Tobias

2017-12-11

The construction of defined nanostructured catalysts is challenging. In previous work, we established a strategy to assemble binary nanoparticle superlattices with oppositely charged protein containers as building blocks. Here, we show that these free-standing nanoparticle superlattices are catalytically active. The metal oxide nanoparticles inside the protein scaffold are accessible for a range of substrates and show oxidase-like and peroxidase-like activity. The stable superlattices can be reused for several reaction cycles. In contrast to bulk nanoparticle-based catalysts, which are prone to aggregation and difficult to characterize, nanoparticle superlattices based on engineered protein containers provide an innovative synthetic route to structurally defined heterogeneous catalysts with control over nanoparticle size and composition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dissipative chaos in semiconductor superlattices

Directory of Open Access Journals (Sweden)

F. Moghadam

2008-03-01

Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

Strain dependence of interfacial antiferromagnetic coupling in La0.7Sr0.3MnO3/SrRuO3 superlattices

Science.gov (United States)

Das, Sujit; Herklotz, Andreas; Pippel, Eckhard; Guo, Er-Jia; Rata, Diana; Dörr, Kathrin

2015-03-01

We have investigated the magnetic response of La0.7Sr0.3MnO3/SrRuO3 superlattices to biaxial in-plane strain applied in-situ. Superlattices grown on piezoelectric substrates of 0.72PbMg1/3Nb2/3O3-0.28PbTiO3(001) (PMN-PT) show strong antiferromagnetic coupling of the two ferromagnetic components. The coupling field of μ0HAF = 1.8 T is found to change by μ0 ΔHAF / Δɛ ~ -520 mT %-1 under reversible biaxial strain (Δɛ) at 80 K in a [La0.7Sr0.3MnO3(22 Å)/SrRuO3(55 Å)]15 superlattice. This reveals a significant strain effect on interfacial coupling. The applied in-plane compression enhances the ferromagnetic order in the manganite layers which are under as-grown tensile strain. It is thus difficult to disentangle the contributions from strain-dependent antiferromagnetic Mn-O-Ru interface coupling and Mn-O-Mn ferromagnetic double exchange near the interface, since the enhanced magnetic order of Mn spins leads to a larger net coupling of SrRuO3 layers at the interface. We discuss our experimental findings taken into account both the strain-dependent orbital occupation in a single-ion picture and the enhanced Mn order at the interface. This work was supported by the DFG within the Collaborative Research Center SFB 762 ``Functionality of Oxide Interfaces.''

Low temperature synthesis of Mo2C/W2C superlattices via ultra-thin modulated reactants

International Nuclear Information System (INIS)

Johnson, C.D.; Johnson, D.C.

1996-01-01

The authors report here a synthesis method of preparing carbide superlattices using ultra-thin modulated reactants. Initial investigations into the synthesis of the binary systems, Mo 2 C and W 2 C using ultra-thin modulated reactants revealed that both can be formed at relatively low temperatures (500 and 600 C respectively). DSC and XRD data suggested a two step reaction pathway involving interdiffusion of the initial modulated reactant followed by crystallization of the final product, if the modulation length is on the order of 10 angstrom. This information was used to form Mo 2 C/W 2 C superlattices using the structure of the ultra-thin modulated reactant to control the final superlattice period. Relatively large superlattice modulations were kinetically trapped by having several repeat units of each binary within the total repeat of the initial reactant. DSC and XRD data again are consistent with a two step reaction pathway leading to the formation of carbide superlattices

Formation mechanism of dot-line square superlattice pattern in dielectric barrier discharge

Energy Technology Data Exchange (ETDEWEB)

Liu, Weibo; Dong, Lifang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com; Wang, Yongjie; Zhang, Xinpu [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China); Pan, Yuyang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com [College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China)

2014-11-15

We investigate the formation mechanism of the dot-line square superlattice pattern (DLSSP) in dielectric barrier discharge. The spatio-temporal structure studied by using the intensified-charge coupled device camera shows that the DLSSP is an interleaving of three different subpatterns in one half voltage cycle. The dot square lattice discharges first and, then, the two kinds of line square lattices, which form square grid structures discharge twice. When the gas pressure is varied, DLSSP can transform from square superlattice pattern (SSP). The spectral line profile method is used to compare the electron densities, which represent the amounts of surface charges qualitatively. It is found that the amount of surface charges accumulated by the first discharge of DLSSP is less than that of SSP, leading to a bigger discharge area of the following discharge (lines of DLSSP instead of halos of SSP). The spatial distribution of the electric field of the surface charges is simulated to explain the formation of DLSSP. This paper may provide a deeper understanding for the formation mechanism of complex superlattice patterns in DBD.

Photoacoustic transformation of Bessel light beams in magnetoactive superlattices

Energy Technology Data Exchange (ETDEWEB)

Mityurich, G. S., E-mail: George-mityurich@mail.ru [Belarusian Trade and Economics University of Consumer Cooperatives (Belarus); Chernenok, E. V.; Sviridova, V. V.; Serdyukov, A. N. [Gomel State University (Belarus)

2015-03-15

Photoacoustic transformation of the TE mode of a Bessel light beam (BLB) has been studied for piezoelectric detection in short-period superlattices formed by magnetoactive crystals of bismuth germanate (Bi{sub 12}GeO{sub 20}) and bismuth silicate (Bi{sub 12}SiO{sub 20}) types. It is shown that the resulting signal amplitude can be controlled using optical schemes of BLB formation with a tunable cone angle. A resonant increase in the signal amplitude has been found in the megahertz range of modulation frequencies and its dependences on the BLB modulation frequency, geometric sizes of the two-layer structure and piezoelectric transducer, radial coordinate of the polarization BLB mode, and dissipative superlattice parameters are analyzed.

Ground state energy of a polaron in a superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.A.; Nkrumah, G.; Mensah, N.G.

2000-10-01

The ground state energy of a polaron in a superlattice was calculated using the double-time Green functions. The effective mass of the polaron along the planes perpendicular to the superlattice axis was also calculated. The dependence of the ground state energy and the effective mass along the planes perpendicular to the superlattice axis on the electron-phonon coupling constant α and on the superlattice parameters (i.e. the superlattice period d and the bandwidth Δ) were studied. It was observed that if an infinite square well potential is assumed, the ground state energy of the polaron decreases (i.e. becomes more negative) with increasing α and d, but increases with increasing Δ. For small values of α, the polaron ground state energy varies slowly with Δ, becoming approximately constant for large Δ. The effective mass along the planes perpendicular to the superlattice axis was found to be approximately equal to the mass of an electron for all typical values of α, d and Δ. (author)

Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

Science.gov (United States)

Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

1987-06-08

A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

The solitary electromagnetic waves in the graphene superlattice

International Nuclear Information System (INIS)

Kryuchkov, Sergey V.; Kukhar', Egor I.

2013-01-01

d’Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is analyzed. The possibility of the propagation of the solitary electromagnetic waves in the graphene superlattice is discussed. The amplitude and the width of the electromagnetic pulse are calculated. The drag current induced by such wave across the superlattice axis is investigated. The numerical estimate of the charge dragged by the solitary wave is made.

Microwave absorption in YBCO/PrBCO superlattices

International Nuclear Information System (INIS)

Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

1992-01-01

In this paper, non-resonant microwave absorption is employed to probe YBCO/PrBCO superlattices and compare the response to that of a YBCO film. Near the transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependencies. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependencies, which the authors attribute to the role of the PrBCO layers

Polaritons in periodic and quasiperiodic structures

CERN Document Server

Albuquerque, Eudenilson L

2004-01-01

In recent years there have been exciting developments in techniques for producing multilayered structures of different materials, often with thicknesses as small as only a few atomic layers. These artificial structures, known as superlattices, can either be grown with the layers stacked in an alternating fashion (the periodic case) or according to some other well-defined mathematical rule (the quasiperiodic case). This book describes research on the excitations (or wave-like behavior) of these materials, with emphasis on how the material properties are coupled to photons (the quanta of the l

Electronic states in tunneling semiconductor superlattices: Technical progress report for the period September 15, 1987-September 14, 1988

International Nuclear Information System (INIS)

Ulloa, S.E.

1988-01-01

This research project funded by DOE has concentrated in the systematic study of the effects of a gate voltage on the electronic structure of a tunneling superlattice system. The effects of strong magnetic fields and other various parameters on energy levels of tunneling superlattices have been investigated

Positron probing of electron momentum density in GaAs-AlAs superlattices and related materials

International Nuclear Information System (INIS)

Arutyunov, N.Y.; Sekkal, N.

2008-08-01

The band structure calculations based on the method proposed by Jaros et al. (Phys. Rev. B 31, 1205 (1985)) have been performed for the defect-free GaAs-AlAs superlattice and related AlAs and GaAs single crystals; the electron-positron momentum density distributions have been computed and analyzed. The results of calculations are in good agreement with the experimental data obtained ad hoc for GaAs and AlAs bulk materials by measuring the angular correlation of the annihilation radiation (ACAR). Small (but marked) features of the electron-positron momentum density of the valence band have been revealed both for constituent materials and GaAs-AlAs superlattice. The delocalization of positron in 'perfect' defect-'free' AlAs and GaAs single crystals to be observed experimentally is borne out by the results of pseudo-potential band calculations performed on the basis of method proposed by Sekkal et al. (Superlattices and Microstructures, 33, 63 (2003)). The prediction of the possibility of a certain confinement of positron in the interstitial area of GaAs- AlAs superlattice is confirmed by the agreement between the results of calculations and relevant experimental data obtained for GaAs and AlAs single crystals. No considerable effect of the enhancement of the annihilation rate (due to electron-positron interaction) upon the electron-positron momentum density distribution both in the superlattice and its constituent bulk materials has been found. The results of ACAR measurements and calculations performed suggest that a tangible improvement of the sensitivity of existing positron annihilation techniques is necessary for studying details of the electron-positron momentum density distributions in defect-'free' superlattices to be created on the basis of the diamond-like semiconductors possessing close values of the electron momentum densities. On the contrary, the positron-sensitive vacancy-type defects of various types in the superlattice may become a source of the

Step-driven surface segregation and ordering during Si-Ge MBE growth

International Nuclear Information System (INIS)

Jesson, D.E.; Pennycook, S.J.; Baribeau, J.M.; Houghton, D.C.

1992-06-01

An important role of type S B step edges in determining the as-grown microstructure of Si-Ge superlattices and alloys is implicated from direct Z-contrast images of as-grown structures. A variety of different ordered phase variants can arise at each Si on Ge interface as a result of vertical segregation during superlattice growth. A new monoclinic-ordered structure is predicted to arise as a result of lateral segregation during alloy growth

Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

Science.gov (United States)

Baribeau, J.-M.; Lockwood, D. J.; Syme, R. W. G.

1996-08-01

We have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150-650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2-0.3 nm in the 300-590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ˜0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30-40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ˜460 °C and peaks at ˜520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C.

Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

International Nuclear Information System (INIS)

Keay, B.J.; Allen, S.J.; Campman, K.L.

1995-01-01

We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

2014-01-01

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

KAUST Repository

Sarath Kumar, S. R.

2014-04-22

A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

Bi-continuous Multi-component Nanocrystal Superlattices for Solar Energy Conversion

Energy Technology Data Exchange (ETDEWEB)

Kagan, Cherie [University of Pennsylvania; Murray, Christopher [University of Pennsylvania; Kikkawa, James [University of Pennsylvania; Engheta, Nader [University of Pennsylvania

2017-06-14

Our SISGR program studied an emerging class of nanomaterials wherein different combinations of semiconductor or semiconductor and plasmonic nanocrystals (NCs) are self-assembled into three-dimensional multi-component superlattices. The NC assemblies were designed to form bicontinuous semiconductor NC sublattices with type-II energy offsets to drive charge separation onto electron and hole transporting sublattices for collection and introduce plasmonic NCs to increase solar absorption and charge separation. Our group is expert in synthesizing and assembling an extraordinary variety of artificial systems by tailoring the NC building blocks and the superlattice unit cell geometry. Under this DOE BES Materials Chemistry program, we introduced chemical methods to control inter-particle distance and to dope NC assemblies, which enabled our demonstration of strong electronic communication between NCs and the use of NC thin films as electronic materials. We synthesized, assembled and structurally, spectroscopically, and electrically probed NC superlattices to understand and manipulate the flow of energy and charge toward discovering the design rules and optimizing these complex architectures to create materials that efficiently convert solar radiation into electricity.

Dielectric function of semiconductor superlattice

International Nuclear Information System (INIS)

Qin Guoyi.

1990-08-01

We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

KAUST Repository

Bian, Kaifu; Choi, Joshua J.; Kaushik, Ananth; Clancy, Paulette; Smilgies, Detlef-M.; Hanrath, Tobias

2011-01-01

Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

KAUST Repository

Bian, Kaifu

2011-04-26

Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

Science.gov (United States)

Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

2018-03-01

We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

Recent results on heterojunctions and superlattices: transport and optics

International Nuclear Information System (INIS)

Voos, M.

1983-01-01

Recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices are presented. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (Author) [pt

Localization in superlattices with randomness in layer thickness

International Nuclear Information System (INIS)

Yuan Jian; Tsai Chienhua.

1987-08-01

The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3.

Science.gov (United States)

Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J

2010-08-27

When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.

The Luttinger liquid in superlattice structures: atomic gases, quantum dots and the classical Ising chain

International Nuclear Information System (INIS)

Bhattacherjee, Aranya B; Jha, Pradip; Kumar, Tarun; Mohan, Man

2011-01-01

We study the physical properties of a Luttinger liquid in a superlattice that is characterized by alternating two tunneling parameters. Using the bosonization approach, we describe the corresponding Hubbard model by the equivalent Tomonaga-Luttinger model. We analyze the spin-charge separation and transport properties of the superlattice system. We suggest that cold Fermi gases trapped in a bichromatic optical lattice and coupled quantum dots offer the opportunity to measure these effects in a convenient manner. We also study the classical Ising chain with two tunneling parameters. We find that the classical two-point correlator decreases as the difference between the two tunneling parameters increases.

Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

International Nuclear Information System (INIS)

Min, Li; Xian-Wu, Mi

2009-01-01

This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Transport properties of YBa2Cu3O7/PrBa2Cu3O7 superlattices

International Nuclear Information System (INIS)

Jakob, G.; Hahn, T.; Stoelzel, C.; Tome-Rosa, C.; Adrian, H.

1992-01-01

We investigated the transport properties of high-quality YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 superlattices. The exceptional structural order of the superlattices resulted in satellite peaks up to the ninth order in X-ray diffraction diagrams and high Tc values. We find high superconducting critical transport current densities j c even for ultrafine modulated superlattices which proves the existence of nearly continuous YBa 2 Cu 3 O 7 layers. The activation energy U is found to be constant or to have a linear temperatures dependence over a wide temperature range. (orig.)

Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

International Nuclear Information System (INIS)

Pavelyev, D. G.; Vasilev, A. P.; Kozlov, V. A.; Koschurinov, Yu. I.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.

2016-01-01

The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

International Nuclear Information System (INIS)

Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

2011-01-01

We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

Valley-chiral quantum Hall state in graphene superlattice structure

Science.gov (United States)

Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

2016-05-01

We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

Optical properties of InAs/GaAs quantum dot superlattice structures

Science.gov (United States)

Imran, Ali; Jiang, Jianliang; Eric, Deborah; Zahid, M. Noaman; Yousaf, M.; Shah, Z. H.

2018-06-01

Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm-1 and can be used for highly sensitive infrared detector and high efficiency solar cells.

The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Burkhart, J.H.

1997-01-01

We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH 3 , and PH 3 . By changing the layer thickness and composition we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

International Nuclear Information System (INIS)

Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

2006-01-01

Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles

Waves in man-made materials: superlattice to metamaterials

Science.gov (United States)

Tsu, Raphael; Fiddy, Michael A.

2014-07-01

While artificial or man-made structures date back to Lord Rayleigh, the work started by Lewin in 1947, placing spheres onto cubic lattices, greatly enriched microwave materials and devices. It was very suggestive of both metamaterials and photonics crystals. Effective medium models were used to describe bulk properties with some success. The concept of metamaterials followed photonic crystals, and these both were introduced after the introduction of the man-made superlattices designed to enrich the class of materials for electronic devices. The work on serrated ridged waveguides by Kirschbaum and Tsu for the control of the refractive index of microwave lenses as well as microwave matching devices in 1959 used a combination of theory, such as Floquet's theory, Bloch theory in one dimension, as well as periodic lumped loading. There is much in common between metamaterials and superlattices, but in this paper, we discuss some practical limitations to both. It is pointed out that unlike superlattices where kl > 1 is the most important criterion, metamaterials try to avoid involve such restrictions. However, the natural random fluctuations that limit the properties of naturally occurring materials are shown to take a toll on the theoretical predictions of metamaterials. The question is how great that toll, i.e. how significant those fluctuations will be, in diminishing the unusual properties that metamaterials can exhibit.

Magnetic superlattices

International Nuclear Information System (INIS)

Kwo, J.; Hong, M.; McWhan, D.B.; Yafet, Y.; Fleming, R.M.; DiSalvo, F.J.; Waszczak, J.V.; Majkrzak, C.F.; Gibbs, D.; Goldmann, A.I.; Boni, P.; Bohr, J.; Grimm, H.; Bohr, J.; Chien, C.L.; Grimm, H.; Cable, J.W.

1988-01-01

Single crystal magnetic rare earth superlattices were synthesized by molecular beam epitaxy. The studies include four rare earth systems: Gd-Y, Dy-Y, Ho-Y, and Gd-Dy. The magnetic properties and the long-range spin order are reviewed in terms of the interfacial behavior, and the interlayer exchange coupling across Y medium

Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition

International Nuclear Information System (INIS)

Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H.

2004-01-01

A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ=1.58 μm) with a full width at half maximum (FWHM) of 96 meV observed. We studied structural properties using high-resolution x-ray diffraction combined with dynamic simulation and found through the strain state in samples that a ZnSe/BeTe interface having a quaternary interface layer (ZnTe) 0.45 (BeSe) 0.55 is preferentially formed despite the promotion of one molecular layer (ML) ZnTe interface formation. Be-Se bonds thus replace the Zn-Te bond in the transition region. For the CdS/ZnSe interface, an approximately 1 ML Zn 0.75 Cd 0.25 S ternary layer accompanied by ∼1 ML Zn 0.85 Cd 0.15 Se forms at the transition region due to Cd diffusion. X-ray (002) ω/2θ scan curves for (CdS/ZnSe)/BeTe SLs show sharp, intense satellite peaks exceeding ten orders, indicating high structure quality. We obtained excellent agreement between experimental diffraction patterns and the calculated curve via dynamic simulation for (CdS/ZnSe)/BeTe SLs. The good fits allows us to identify structure parameters in (CdS/ZnSe)/BeTe SLs, which are consistent with results of high-resolution transmission electron microscopy measurement. Based on dynamic simulated results, we obtained a structure of (CdS/ZnSe)/Be 1-x Mg x Te (x=1.2%) with an average lattice constant a SL matching the GaAs substrate. An ISB-T located at wavelength λ=1.55 μm with a narrow FWHM of 90 meV was thus realized at room temperature

Mixing of III-V compound semiconductor superlattices

International Nuclear Information System (INIS)

Mei, Ping.

1989-01-01

In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems

Energy Technology Data Exchange (ETDEWEB)

Malyshev, K. V., E-mail: malyshev@bmstu.ru [Electronics and Laser Technology Department, Bauman Moscow State Technical University, Moscow 105005 (Russian Federation)

2015-01-28

The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh–Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F{sup 0}{sub 11}(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional “cubic” diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.

Interface-Induced Nucleation, Orientational Alignment and Symmetry Transformations in Nanocube Superlattices

KAUST Repository

Choi, Joshua J.

2012-09-12

The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ synchrotron-based X-ray scattering. We combined small-angle and wide-angle scattering to investigate the translational ordering of nanocrystals and their orientational ordering in the lattice sites, respectively. We found that cubic PbSe nanocrystals assembled into a face-up (i.e., 〈100〉 normal to the interface) configuration at the liquid/substrate interface whereas nanocubes at the liquid/air interface assume a corner-up (i.e., 〈111〉 normal to the interface) configuration. The latter nanocrystal superlattice displays polymorphism as a function inter-NC separation distance. We explain the observed superlattice structure polymorphs in terms of the interactions directing the self-assembly. Insights into the directed self-assembly of superlattices gained from this study have important implication on the future development of nanocrystals as building blocks in artificial solids. © 2012 American Chemical Society.

Ferromagnetic resonance study of structure and relaxation of magnetization in NiFe/Ru superlattices

Energy Technology Data Exchange (ETDEWEB)

Alayo, W., E-mail: willian.rodriguez@ufpel.edu.br [Depto. de Física, Univ. Federal de Pelotas, Campus Universitário, 96010-900, Pelotas, RS (Brazil); Landi Jr, S. [Instituto Federal Goiano, Rio Verde 75901-970 (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74001-970 (Brazil); Baggio-Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

2014-01-15

The structural properties and relaxation processes of magnetization in [Ni{sub 81}Fe{sub 19}(t{sub 1})/Ru(t{sub 2})]{sub N} superlattices (N=number of bilayers) were analyzed by ferromagnetic resonance (FMR) with a fixed microwave frequency. One series of samples was deposited with constant NiFe layer thickness (t{sub 1}) and variable Ru layer thickness (t{sub 2}); the other series, with constant t{sub 2} and variable t{sub 1}. A single FMR mode was observed for t{sub 2}<15 Å and t{sub 1}>75 Å and it has been attributed to the resonance of the exchange-coupled NiFe layers across the Ru interlayers. For the other values of t{sub 1} and t{sub 2}, several FMR modes appeared and they were associated to non-coupled magnetic phases with different effective magnetization formed during the multilayer growth. The FMR linewidths were analyzed as a function of the magnetic layer thickness and a strong dependence on t{sub 1}{sup −2} was observed. It was attributed to the contribution of the two-magnon scattering mechanism for the linewidth. - Highlights: • We present a study of magnetic properties of NiFe/Ru superlattices by ferromagnetic resonance (FMR). • The FMR spectra show several modes for large Ru thicknesses and for low NiFe thicknesses. • The above behavior is correlated with the interlayer exchange coupling. • The two-magnon scattering mechanism is revealed by the dependence of the FMR linewidth on the NiFe thickness.

Piezoelectricity in the dielectric component of nanoscale dielectric-ferroelectric superlattices.

Science.gov (United States)

Jo, Ji Young; Sichel, Rebecca J; Lee, Ho Nyung; Nakhmanson, Serge M; Dufresne, Eric M; Evans, Paul G

2010-05-21

The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54  pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.

Superlattice configurations in linear chain hydrocarbon binary mixtures

Indian Academy of Sciences (India)

Unknown

Long-chain alkanes; binary mixtures; superlattices; discrete orientational changes. 1. Introduction ... tem and a model of superlattice configuration was proposed4, in terms of .... C18 system,4 the angle with value = 3⋅3° was seen to play an ...

Energy band and transport properties in magnetic aperiodic graphene superlattices of Thue-Morse sequence

Science.gov (United States)

Yin, Yiheng; Niu, Yanxiong; Zhang, Huiyun; Zhang, Yuping; Liu, Haiyue

2016-02-01

Utilizing the transfer matrix method, we develop the electronic band structure and transport properties in Thue-Morse aperiodic graphene superlattices with magnetic barriers. It is found that the normal transmission is blocked and the position of the Dirac point can be shifted along the wavevector axis by changing the height and width ratio of magnetic barriers, which is intrinsic different from electronic field modulated superlattices. In addition, the angular threshold property of the transmission spectra and the oscillatory property of the conductance have been studied.

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

Science.gov (United States)

Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

2012-01-30

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

Wave-function reconstruction in a graded semiconductor superlattice

DEFF Research Database (Denmark)

Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.

2004-01-01

We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...

Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys. Ph.D Thesis

Science.gov (United States)

Kahen, K. B.

1986-01-01

The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

Directory of Open Access Journals (Sweden)

Debashis De

2011-07-01

Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

Epitaxial rare-earth superlattices and films

International Nuclear Information System (INIS)

Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

1992-01-01

This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

Ge/SiGe superlattices for nanostructured thermoelectric modules

International Nuclear Information System (INIS)

Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

2013-01-01

Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

International Nuclear Information System (INIS)

Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph

2007-01-01

Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p + -n - -n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics

Antiferromagnetic spinor condensates in a bichromatic superlattice

Science.gov (United States)

Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei

2017-04-01

A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

Broadband mid-infrared superlattice light-emitting diodes

Science.gov (United States)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

Superlattice to nanoelectronics

CERN Document Server

Tsu, Raphael

2005-01-01

Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement...

Molecular beam epitaxy of alternating-strain ZnSe-based multilayer heterostructures for blue-green lasers

International Nuclear Information System (INIS)

Ivanov, S.V.; Toropov, A.A.; Sorokin, S.V.; Shubina, T.V.; Il'inskaya, N.D.; Lebedev, A.V.; Sedova, I.V.; Kop'ev, P.S.; Alferov, Zh.I.; Lugauer, H.-J.; Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

1998-01-01

High-quality ZnSe-based heterostructures are grown by uninterrupted molecular beam epitaxy using the concept of strain compensation and alternating-strain multilayers. To verify the advantages of this technique, optically pumped ZnSSe/ZnCdSe laser structures containing short-period superlattices or multiple quantum wells have been grown and studied. A room-temperature injection laser diode with a BeZnSe/ZnSe superlattice waveguide is described

Correlating interfacial octahedral rotations with magnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices.

Science.gov (United States)

Zhai, Xiaofang; Cheng, Long; Liu, Yang; Schlepütz, Christian M; Dong, Shuai; Li, Hui; Zhang, Xiaoqiang; Chu, Shengqi; Zheng, Lirong; Zhang, Jing; Zhao, Aidi; Hong, Hawoong; Bhattacharya, Anand; Eckstein, James N; Zeng, Changgan

2014-07-09

Lattice distortion due to oxygen octahedral rotations have a significant role in mediating the magnetism in oxides, and recently attracts a lot of interests in the study of complex oxides interface. However, the direct experimental evidence for the interrelation between octahedral rotation and magnetism at interface is scarce. Here we demonstrate that interfacial octahedral rotation are closely linked to the strongly modified ferromagnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices. The maximized ferromagnetic moment in the N=6 superlattice is accompanied by a metastable structure (space group Imcm) featuring minimal octahedral rotations (a(-)a(-)c(-), α~4.2°, γ~0.5°). Quenched ferromagnetism for Nmagnetism. Our study demonstrates that engineering superlattices with controllable interfacial structures can be a feasible new route in realizing functional magnetic materials.

Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

International Nuclear Information System (INIS)

Wang, Yu

2014-01-01

We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Oeztuerk, N.; Bahceli, S.

2010-01-01

InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

Determination of superlattice effect on metal–ceramic nano-structures

Directory of Open Access Journals (Sweden)

J.C. Caicedo

2015-01-01

Full Text Available Binary nitrides multilayer systems were grown on silicon (100 substrates with the aim to study the coherent assembly in HfN/VN material. Multilayers films were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ and the bilayer number (n while maintaining constant the total coating thickness (∼2.4 μm. The layers were characterized by high angle X-ray diffraction (HA-XRD, low angle X-ray diffraction (LA-XRD. HfN and VN layers were analyzed by X-ray photoelectron spectroscopy (XPS and electron and transmission microscopy (TEM. HA-XRD results showed preferential growth in the face-centered cubic (111 crystal structure for HfN/VN multilayer systems with the epitaxial relation (111 [100]HfN//(200 [100]VN. The maximum coherent assembly was observed with presence of satellite peaks. With this idea, ternary and binary nitrides films have been designed and deposited on Si (100 substrates with bilayer periods (Λ in a broad range, from nanometers to micrometers. The films were fabricated to study the structural evolution, coherent assembly progress and optical properties such as the critical angle, dispersion coefficient, index of refraction for HfN/VN multilayers with decreasing bilayer thickness.

Ultra-low Thermal Conductivity in Si/Ge Hierarchical Superlattice Nanowire.

Science.gov (United States)

Mu, Xin; Wang, Lili; Yang, Xueming; Zhang, Pu; To, Albert C; Luo, Tengfei

2015-11-16

Due to interfacial phonon scattering and nanoscale size effect, silicon/germanium (Si/Ge) superlattice nanowire (SNW) can have very low thermal conductivity, which is very attractive for thermoelectrics. In this paper, we demonstrate using molecular dynamics simulations that the already low thermal conductivity of Si/Ge SNW can be further reduced by introducing hierarchical structure to form Si/Ge hierarchical superlattice nanowire (H-SNW). The structural hierarchy introduces defects to disrupt the periodicity of regular SNW and scatters coherent phonons, which are the key contributors to thermal transport in regular SNW. Our simulation results show that periodically arranged defects in Si/Ge H-SNW lead to a ~38% reduction of the already low thermal conductivity of regular Si/Ge SNW. By randomizing the arrangement of defects and imposing additional surface complexities to enhance phonon scattering, further reduction in thermal conductivity can be achieved. Compared to pure Si nanowire, the thermal conductivity reduction of Si/Ge H-SNW can be as large as ~95%. It is concluded that the hierarchical structuring is an effective way of reducing thermal conductivity significantly in SNW, which can be a promising path for improving the efficiency of Si/Ge-based SNW thermoelectrics.

Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

Science.gov (United States)

Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

2018-04-01

Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

InGaNAs/GaAs multi-quantum wells and superlattices solar cells

International Nuclear Information System (INIS)

Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis

2011-01-01

A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

Energy Technology Data Exchange (ETDEWEB)

Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

1997-02-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

International Nuclear Information System (INIS)

Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

1997-01-01

In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

Synchrotron spectroscopy of confined carriers in CdF{sub 2}-CaF{sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ivanovskikh, K. V. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Institute of Physics and Technology, Ural Federal University, Ekaterinburg 620002 (Russian Federation); Hughes-Currie, R. B. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Reid, M. F.; Reeves, R. J. [MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. Box 600, Wellington 6140 (New Zealand); Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Wells, J.-P. R., E-mail: jon-paul.wells@canterbury.ac.nz [Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Sokolov, N. S. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

2016-03-14

Luminescence spectroscopic and temporal dynamic properties of high energy elementary excitations in CdF{sub 2}-CaF{sub 2} superlattices have been studied utilising excitation with vacuum ultraviolet and X-ray synchrotron radiation while comparing the results with those obtained for CdF{sub 2} and CaF{sub 2} bulk crystals. It is shown that the optical properties of the superlattice structures are determined by exciton emission in the CdF{sub 2} monolayers. The experimental manifestations of exciton confinement phenomena are discussed.

Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

International Nuclear Information System (INIS)

Shuleiko, D V; Ilin, A S

2016-01-01

Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

Free-Standing Bilayered Nanoparticle Superlattice Nanosheets with Asymmetric Ionic Transport Behaviors.

Science.gov (United States)

Rao, Siyuan; Si, Kae Jye; Yap, Lim Wei; Xiang, Yan; Cheng, Wenlong

2015-11-24

Natural cell membranes can directionally and selectively regulate the ion transport, which is critical for the functioning of living cells. Here, we report on the fabrication of an artificial membrane based on an asymmetric nanoparticle superlattice bilayered nanosheet, which exhibits similar ion transport characteristics. The superlattice nanosheets were fabricated via a drying-mediated self-assembly of polystyrene-capped gold nanoparticles at the liquid-air interface. By adopting a layer-by-layer assembly process, an asymmetric nanomembrane could be obtained consisting of two nanosheets with different nanoparticle size. The resulting nanomembranes exhibit an asymmetric ion transport behavior, and diode-like current-voltage curves were observed. The asymmetric ion transport is attributed to the cone-like nanochannels formed within the membranes, upon which a simulation map was established to illustrate the relationship between the channel structure and the ionic selectivity, in consistency with our experimental results. Our superlattice nanosheet-based design presents a promising strategy for the fabrication of next-generation smart nanomembranes for rationally and selectively regulating the ion transport even at a large ion flux, with potential applications in a wide range of fields, including biosensor devices, energy conversion, biophotonics, and bioelectronics.

Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

2016-01-01

The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

Science.gov (United States)

Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

2016-05-01

The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

In-plain electric properties of [CaMnO3/REMO3] (RE=Bi, La M=Fe, Fe0.8Mn0.2) superlattices grown by pulsed laser deposition method

NARCIS (Netherlands)

Iwata, N.; Watabe, Y.; Oikawa, T.; Takase, K.; Huijben, Mark; Inaba, T.; Oshima, K.; Rijnders, Augustinus J.H.M.; Yamamoto, H.

2014-01-01

The [CaMnO3 (CMO)/REMO3] (RE = Bi, La M = Fe, Fe0.8Mn0.2) superlattices show semiconducting behavior with transition temperatures (TEg) of 71, 127, and 151 K in the [CMO/BiFe0.8Mn0.2O3], [CMO/BiFeO3], and [CMO/LaFeO3] superlattices. The formation of a magnetic polaron is expected in the CMO layer of

Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

International Nuclear Information System (INIS)

Ohta, Hiromichi

2008-01-01

This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

Science.gov (United States)

2017-06-05

potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

Molecular Dynamic Simulation of Space and Earth-Grown Crystal Structures of Thermostable T1 Lipase Geobacillus zalihae Revealed a Better Structure.

Science.gov (United States)

Ishak, Siti Nor Hasmah; Aris, Sayangku Nor Ariati Mohamad; Halim, Khairul Bariyyah Abd; Ali, Mohd Shukuri Mohamad; Leow, Thean Chor; Kamarudin, Nor Hafizah Ahmad; Masomian, Malihe; Rahman, Raja Noor Zaliha Raja Abd

2017-09-25

Less sedimentation and convection in a microgravity environment has become a well-suited condition for growing high quality protein crystals. Thermostable T1 lipase derived from bacterium Geobacillus zalihae has been crystallized using the counter diffusion method under space and earth conditions. Preliminary study using YASARA molecular modeling structure program for both structures showed differences in number of hydrogen bond, ionic interaction, and conformation. The space-grown crystal structure contains more hydrogen bonds as compared with the earth-grown crystal structure. A molecular dynamics simulation study was used to provide insight on the fluctuations and conformational changes of both T1 lipase structures. The analysis of root mean square deviation (RMSD), radius of gyration, and root mean square fluctuation (RMSF) showed that space-grown structure is more stable than the earth-grown structure. Space-structure also showed more hydrogen bonds and ion interactions compared to the earth-grown structure. Further analysis also revealed that the space-grown structure has long-lived interactions, hence it is considered as the more stable structure. This study provides the conformational dynamics of T1 lipase crystal structure grown in space and earth condition.

Space-time evolution of Gaussian wave packets through superlattices containing left-handed layers

Energy Technology Data Exchange (ETDEWEB)

Pereyra, P; Romero-Serrano, M [Departamento de Ciencias Basicas, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico); Robledo-Martinez, A, E-mail: ppereyra@correo.azc.uam.m, E-mail: a.robledo@mailaps.or [Departamento de EnergIa, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico)

2009-05-01

We study the space-time evolution of Gaussian electromagnetic wave packets moving through (L/R){sup n} superlattices, containing alternating layers of left and right-handed materials. We show that the time spent by the wave packet moving through arbitrary (L/R){sup n} superlattices are well described by the phase time. We show that in the particular case where the thicknesses d{sub L,R} and indices n{sub l,r} of the layers satisfy the condition d{sub L}|n{sub L}| = d{sub R}n{sub R}, the usual band structure becomes a sequence of isolated and equidistant peaks with negative phase times.

Materials science and technology strained-layer superlattices materials science and technology

CERN Document Server

Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P

1990-01-01

The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...

Control of the interparticle spacing in gold nanoparticle superlattices

Energy Technology Data Exchange (ETDEWEB)

MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

2000-04-06

The authors have investigated the formation of 2-D and 3-D superlattices of Au nanoclusters synthesized in nonionic inverse micelles, and capped with alkyl thiol ligands, with alkane chains ranging from C{sub 6} to C1{sub 18}. The thiols are found to play a significant role in the ripening of these nanoclusters, and in the formation of superlattices. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function, from which one can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the nanoclusters become more polydisperse and larger, and the gaps between particles within superlattice domains increases. Annealing studies at elevated temperatures confirm nanocluster ripening. Finally, the effect of the particle gaps on physical properties is illustrated by computing the effective dielectric constant, and it is shown that the gap size now accessible in superlattices is rather large for dielectric applications.

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

KAUST Repository

Kaloni, T. P.

2013-11-12

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

Energy Technology Data Exchange (ETDEWEB)

Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

2016-04-11

The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

Superlattice doped layers for amorphous silicon photovoltaic cells

Science.gov (United States)

Arya, Rajeewa R.

1988-01-12

Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

Predicting Chiral Nanostructures, Lattices and Superlattices in Complex Multicomponent Nanoparticle Self-Assembly

KAUST Repository

Hur, Kahyun

2012-06-13

"Bottom up" type nanoparticle (NP) self-assembly is expected to provide facile routes to nanostructured materials for various, for example, energy related, applications. Despite progress in simulations and theories, structure prediction of self-assembled materials beyond simple model systems remains challenging. Here we utilize a field theory approach for predicting nanostructure of complex and multicomponent hybrid systems with multiple types of short- and long-range interactions. We propose design criteria for controlling a range of NP based nanomaterial structures. In good agreement with recent experiments, the theory predicts that ABC triblock terpolymer directed assemblies with ligand-stabilized NPs can lead to chiral NP network structures. Furthermore, we predict that long-range Coulomb interactions between NPs leading to simple NP lattices, when applied to NP/block copolymer (BCP) assemblies, induce NP superlattice formation within the phase separated BCP nanostructure, a strategy not yet realized experimentally. We expect such superlattices to be of increasing interest to communities involved in research on, for example, energy generation and storage, metamaterials, as well as microelectronics and information storage. © 2012 American Chemical Society.

Stability and Dynamic of strain mediated Adatom Superlattices on Cu<111>

OpenAIRE

Kappus, Wolfgang

2012-01-01

Substrate strain mediated adatom density distributions have been calculated for Cu surfaces. Complemented by Monte Carlo calculations a hexagonal close packaged adatom superlattice in a coverage range up to 0.045 ML is derived. Conditions for the stability of the superlattice against nucleation and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusi...

Atomic structure of CaF2/MnF2-Si(1 1 1) superlattices from X-ray diffraction

International Nuclear Information System (INIS)

Alcock, Simon G.; Nicklin, C.L.; Howes, P.B.; Norris, C.A.; Kyutt, R.N.; Sokolov, N.S.; Yakovlev, N.L.

2007-01-01

X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF 2 -Si(1 1 1) interface and ultrathin films of MnF 2 and CaF 2 within a superlattice. We show that ultrathin films of MnF 2 , below a critical thickness of approximately four monolayers, are crystalline, pseudomorphic, and adopt the fluorite structure of CaF 2 . High temperature deposition of the CaF 2 buffer layer produces a fully reacted, CaF 2 -Si(1 1 1) type-B interface. The mature, 'long' interface is shown to consist of a partially occupied layer of CaF bonded to the Si substrate, followed by a distorted CaF layer. Our atomistic, semi-kinematical scattering method extends the slab reflectivity method by providing in-plane structural information

The dependence of the tunneling characteristic on the electronic energy bands and the carrier’s states of Graphene superlattice

Science.gov (United States)

Yang, C. H.; Shen, G. Z.; Ao, Z. M.; Xu, Y. W.

2016-09-01

Using the transfer matrix method, the carrier tunneling properties in graphene superlattice generated by the Thue-Morse sequence and Kolakoski sequence are investigated. The positions and strength of the transmission can be modulated by the barrier structures, the incident energy and angle, the height and width of the potential. These carriers tunneling characteristic can be understood from the energy band structures in the corresponding superlattice systems and the carrier’s states in well/barriers. The transmission peaks above the critical incident angle rely on the carrier’s resonance in the well regions. The structural diversity can modulate the electronic and transport properties, thus expanding its applications.

Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

DEFF Research Database (Denmark)

Langbein, Wolfgang Werner; Lüerssen, D.; Kalt, H.

1996-01-01

We report on the influence of the interface corrugation in (113)-grown GaAs/AlAs superlattices on their band-edge optical properties both in theory and experiment. We calculate the subband dispersions and the optical anisotropies in a multiband k . p formalism. The dominating contribution...... to the optical anisotropies is found to be due to the intrinsic properties of the valence-band structure. The corrugation modifies the density of states only slightly, giving no evidence of a quantum-win behavior. By comparing the calculation with the experimental optical anisotropy, we can estimate...... of the localized type-I states at the band-edge show an enhanced optical anisotropy in comparison to the luminescence of the extended states, revealing the anisotropic nature of their localization sites. In type-II samples, deeply localized, isolated type-I states (Gamma quantum boxes) dominate the luminescence...

Secondary phase formation in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} thin films and YBa{sub 2}Cu{sub 3}O{sub 7-{delta}}/SrTiO{sub 3} superlattices

Energy Technology Data Exchange (ETDEWEB)

Johnson, C.N.L.

1996-06-01

Studies of YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (YBCO) thin films and YBCO/STO superlattices has been performed. The dc magnetron sputtered YBCO single layer investigation concerned the dependence of the secondary phase formation and superconducting transport properties on sputtering target and ambient gas composition. YBCO/STO superlattices, grown by dc and rf magnetron sputtering, respectively, were analyzed with respect to microstructure and formation of secondary phases. The main characterization techniques used in this study have been x-ray diffraction to identify phases and to obtain orientational relationships, scanning electron microscopy to study surface morphology, transmission electron microscopy for microstructural characterization, and energy-dispersive x-ray spectroscopy for chemical characterization. With the aim to reduce or avoid the formation of copper-rich surface particles and still maintain satisfactory superconducting transport properties, YBCO films were deposited using copper-poor or yttrium-rich sputtering targets in an Ar:O{sub 2} or Ar:O{sub 2}:N{sub 2}O sputtering gas mixture. It was found that the use of yttrium-rich targets and N{sub 2}O in the sputtering gas is a reliable way to achieve smooth films without surface particles and with satisfactory superconducting properties, while the use of copper-poor targets and N{sub 2}O deteriorates those properties. Based on the previous results, YBCO/STO superlattices were grown using yttrium-rich YBCO targets and stoichiometric STO targets, respectively, in a Ar:O{sub 2}:N{sub 2}O sputtering gas mixture. The superlattices were found to have sharp interfaces and no indications of interface reactions were detected. 61 refs, 18 figs, 3 tabs

Binding of biexcitons in GaAs/AlxGa1-xAs superlattices

DEFF Research Database (Denmark)

Mizeikis, Vygantas; Birkedal, Dan; Langbein, Wolfgang Werner

1997-01-01

Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninte......Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same...

Structural, chemical, and thermoelectric properties of Bi2Te3 Peltier materials. Bulk, thin films, and superlattices

International Nuclear Information System (INIS)

Peranio, Nicola

2008-01-01

In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi 2 Te 3 and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi 2 (Te 0.91 Se 0.09 ) 3 and p-type (Bi 0.26 Sb 0.74 ) 1.98 (Te 0.99 Se 0.01 ) 3.02 bulk materials synthesised by the Bridgman technique. (II) Bi 2 Te 3 thin films and Bi 2 Te 3 /Bi 2 (Te 0.88 Se 0.12 ) 3 superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF 2 substrates with periods of δ-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to and an amplitude of about 10 pm and (ii) a wave vector parallel to {1,0,10} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

Designing Optical Properties in DNA-Programmed Nanoparticle Superlattices

Science.gov (United States)

Ross, Michael Brendan

A grand challenge of modern science has been the ability to predict and design the properties of new materials. This approach to the a priori design of materials presents a number of challenges including: predictable properties of the material building blocks, a programmable means for arranging such building blocks into well understood architectures, and robust models that can predict the properties of these new materials. In this dissertation, we present a series of studies that describe how optical properties in DNA-programmed nanoparticle superlattices can be predicted prior to their synthesis. The first chapter provides a history and introduction to the study of metal nanoparticle arrays. Chapter 2 surveys and compares several geometric models and electrodynamics simulations with the measured optical properties of DNA-nanoparticle superlattices. Chapter 3 describes silver nanoparticle superlattices (rather than gold) and identifies their promise as plasmonic metamaterials. In chapter 4, the concept of plasmonic metallurgy is introduced, whereby it is demonstrated that concepts from materials science and metallurgy can be applied to the optical properties of mixed metallic plasmonic materials, unveiling rich and tunable optical properties such as color and asymmetric reflectivity. Chapter 5 presents a comprehensive theoretical exploration of anisotropy (non-spherical) in nanoparticle superlattice architectures. The role of anisotropy is discussed both on the nanoscale, where several desirable metamaterial properties can be tuned from the ultraviolet to near-infrared, and on the mesoscale, where the size and shape of a superlattice is demonstrated to have a pronounced effect on the observed far-field optical properties. Chapter 6 builds upon those theoretical data presented in chapter 5, including the experimental realization of size and shape dependent properties in DNA-programmed superlattices. Specifically, nanoparticle spacing is explored as a parameter that

pi-phase magnetism in ferromagnetic-superconductor superlattices

CERN Document Server

Khusainov, M G; Proshin, Y N

2001-01-01

The Larkin-Ovchinnikov-Fylde-Ferrel new 0 pi- and pi pi-states are forecasted for the ferromagnetic metal/superconductor superlattices with antiferromagnetic magnetization orientation in the neighbouring layers. The above-mentioned states are characterized under certain conditions by higher critical temperature T sub c as compared to the earlier known LOFF 00- and pi 0-states with the FM-layers ferromagnetic ordering. It is shown that the nonmonotonous behavior of the T sub c of the FM/S superlattices by the thickness of the S-layers lower than the d sub s suppi value is connected with the cascades of the 0 pi-pi pi-0 pi phase transitions. The character of the T sub c oscillations by the d sub s > d sub s suppi is related to the 00-pi 0-00 transitions. The logical elements of the new type, combining the advantages of the superconducting and magnetic information recording in one sample are proposed on the basis of the FM/S superlattices

Effects of electron correlations application to Ti atoms on physical properties of (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices

Energy Technology Data Exchange (ETDEWEB)

Aezami, A., E-mail: a.aezami@gmail.com; Abolhassani, M.; Elahi, M.

2016-05-15

Magnetic structures and Curie temperatures of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices (SLm–n) with m=1, 2, 3 and n=1, 2, 3, 8 were investigated, using density functional theory implemented in Quantum-Espresso open source code. By applying on-site coulomb interaction (Hubbard term U) to Ti atoms for all of these superlattices, using Stoner–Wolfarth model, it was found that the magnetic order of interfacial atoms of these superlattices changed to ferromagnetic by implying U=5 eV on Ti atoms. The inclusion of electron–electron correlation with U=5 eV on the Ti atoms for all of the superlattices made the two dimensional electron gas (2DEG) formed at the interfaces, half-metallic. The obtained values of Curie temperature, calculated within mean field approximation with U=5 eV on the Ti atoms, are in good agreement with the experimental results. - Highlights: • Calculated the magnetic structure and Curie temperature of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices with m=1, 2, 3 and n=1, 2, 3, 8 by mean field approximation. • By implying U=5 eV on the Ti atoms, the magnetic order of interfacial atoms of these superlattices has changed to ferromagnetic. • The 2DEG formed at the interface half-metallic have made in these superlattices by the inclusion of electron-electron correlation with U=5 eV on the Ti atoms for all of the superlattices.

Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

International Nuclear Information System (INIS)

Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

1995-01-01

The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials

DEFF Research Database (Denmark)

Naik, Gururaj V.; Saha, Bivas; Liu, Jing

2014-01-01

, we address these issues by realizing an epitaxial superlattice as an HMM. The superlattice consists of ultrasmooth layers as thin as 5 nm and exhibits sharp interfaces which are essential for high-quality HMM devices. Our study reveals that such a TiN-based superlattice HMM provides a higher PDOS...

Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

Energy Technology Data Exchange (ETDEWEB)

Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

2016-03-01

Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.

Science.gov (United States)

Kuchuk, Andrian V; Kryvyi, Serhii; Lytvyn, Petro M; Li, Shibin; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Safryuk, Nadiia V; Stanchu, Hryhorii V; Belyaev, Alexander E; Salamo, Gregory J

2016-12-01

Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

Energy Technology Data Exchange (ETDEWEB)

Venkatasubramanian, R; Colpitts, T

1997-07-01

Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

2D Electron Gas with 100% Spin-Polarization in the (LaMnO3)2/(SrTiO3)2 Superlattice under Uniaxial Strain

KAUST Repository

Cossu, Fabrizio

2014-07-28

By first-principles calculations we investigate the structural, electronic, and magnetic properties of the (LaMnO3)2/(SrTiO3)2 superlattice. We find that a monoclinic C2h symmetry is energetically favorable and that the spins order ferromagnetically. Under both compressive and tensile uniaxial strain the electronic structure of the superlattice shows a half-metallic character. In particular, a fully spin-polarized two-dimensional electron gas, which traces back to the Ti 3dxy orbitals, is achieved under compressive uniaxial strain. The (LaMnO3)2/(SrTiO3)2 superlattice is analysed with respect to its structure, magnetism, and electronic properties. Our results demonstrate that uniaxial strain in an experimentally accessible range, both tensile and compressive, can be used to induce half-metallicity. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Micro-hardness of InxGa(1-x)As superlattices. 'The Frogley conjecture'

International Nuclear Information System (INIS)

Jayaweera, N.B.

2000-01-01

Coherently strained In x Ga (1-x) As superlattices with alternating layers of opposite strain have been grown on InP substrates using Molecular Beam Epitaxy. Control of the layer strains is achieved by varying the indium composition and the structures are characterized using high-resolution x-ray diffraction. An optimized mathematical treatment of high-resolution x-ray data is presented for the determination of strain, composition and tilt of epitaxial strained layers. This analysis also provides guidance as to the best sets of reflections to measure. The method is applied explicitly to reciprocal space mapping, where errors are normally different in different reciprocal space directions, and compare results from rocking curve and reciprocal space analysis. Results are reported on the onset of plasticity in semiconductor strained layer superlattices, using nanoindentation with spherical indenters to observe the full stress-strain curve. The yield pressure is reduced by as much as a factor of two by the presence of the coherency strain. Varying the thicknesses and strains of the layers enables us to show that both sets of layers, compressive and tensile, reduce the yield pressure. This requires that a yield criterion must be satisfied over a finite volume, large enough to include layers of both signs. It is shown that the relevant yield criterion for our experimental data is the rate of change of elastic strain energy with plastic relaxation, integrated over a volume of the order of a micron across. In these studies, we have observed a large and reproducible size effect in the yield pressure and we show how the requirement of meeting a yield criterion over a finite volume naturally leads to the size effect. A theoretical analysis is given and quantative agreement with experiment is obtained. This is a crucial result for the understanding of nanoindentation and other systems in which stresses are highly inhomogeneous on a small scale. The result also has implications

The gas-bubble superlattice and the development of surface structure in He+ and H+ irradiated metals at 300 K

International Nuclear Information System (INIS)

Johnson, P.B.; Mazey, D.J.

1980-01-01

Transmission electron microscopy (TEM) is used to investigate the spatial arrangement of the small gas bubbles produced at 300 K in several fcc metals including copper and in the hcp metal titanium by 30 keV helium ion irradiation, and in copper by 16 keV proton irradiation. For the fcc metals it is found that the helium gas bubbles lie on a superlattice having a fcc structure with principal axes aligned with those of the metal matrix. The bubble lattice constant, α 1 , measured for a helium fluence just below the critical dose for radiation blistering of the metal surface (approx. equal to 4 x 10 21 He + /m 2 ) is typically approx. equal to 7 nm with bubble diameters typically approx. equal to 2 nm. For titanium, similar bubble ordering is seen is samples irradiated to a level of approx. equal to 1.5 x 10 22 He + /m 2 , with bubble sizes and spacings approximately 50% greater than those for the fcc metals. Pipe-like passages formed by the interconnection of strings of helium gas bubbles are evident in all metals studied. Superlattice formation is also a freature of the hydrogen bubble structure in copper following irradiation to a level of approx. equal to 1.3 x 10 23 H + /m 2 . At an early stage of bubble development small bubbles (approx. equal to 2 nm diameter) arranged on a lattice of spacing α 1 approx. equal to 12 nm are found. The bubble structure evolves further through several well-defined stages before radiation blistering of the surface occurs. Some implications for gas release and for synergistic effects in irradiated surfaces are suggested by these results and by those obtained in other recent experiments. (orig.)

Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

Science.gov (United States)

Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

2011-05-01

The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

Tunable electronic and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (001) superlattice: For electrochemical applications

Energy Technology Data Exchange (ETDEWEB)

Xu, Qiang; Sopiha, Kostiantyn; Sobhan, Mushtaq; Anariba, Franklin; Wu, Ping, E-mail: wuping@sutd.edu.sg [Entropic Interface Group (EIG), Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Ong, Khuong Phuong; Zheng, Jian Wei [Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research - A*Star, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore)

2016-01-04

Practical strategy in tuning the conductivity and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (STO/BFO) (001) superlattice is investigated using the first-principles method based on density functional theory. Our calculated results show that both the conductivity and magnetism of this superlattice can be tuned via a control of its interface terminations. The STO layers maintain semiconducting, while the BFO layers demonstrate metallic character. Therefore, the conductivity of STO/BFO is controlled by the BFO layers. Furthermore, a magnetic STO/BFO (001) superlattice can be found in n-type TiO{sub 2}/BiO interface but with heavy electron carriers. The thickness of BFO does not change the electronic structure and character of STO/BFO (001) superlattice. This study provides a fundamental understanding of the chemically turned conductivity and magnetism of BFO thin films, which may further advance electrochemical applications like magnetic-field aided chemical gas sensing, solar cells, and photo-catalytic chemical reactions.

Density functional theory computational study of ferroelectricity and piezoelectricity in BaTiO3/PbTiO3 (0 1 1) superlattices

Science.gov (United States)

Lou, Yaoding; Deng, Junkai; Zhe Liu, Jefferson

2018-04-01

The structure, ferroelectricity (FE), and piezoelectricity of epitaxial BaTiO3/PbTiO3 (BTO/PTO) (0 1 1) superlattices are studied using density functional theory calculations. Our results show that compressive strain arising from the SrTiO3 (0 1 1) substrate stabilizes the (BTO) m /(PTO) n (0 1 1) superlattices in orthorhombic phase with the FE polarization along [0 1 1] direction. Tuning the BTO contents significantly changes the structural, ferroelectric and piezoelectric properties. The FE polarization of superlattices significantly drops with increasing BTO contents, which can be attributed to depolarization of the PTO layers. The averaged c/a ratio of the whole superlattices exhibits anomalous non-monotonic relation with respect to BTO contents. Interestingly, our results predict the (0 1 1) superlattices can enhance the piezoelectric coefficient e 33 with a maximum value at ~67% BTO concentration. This result suggests a potential avenue to design high performance piezoelectric materials with less Pb contents. In-depth analysis reveals the B-site Ti cation as the origin for the enhanced e 33 value, which implies the potential of B-site cation engineering in perovskite heterostructure designs.

Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

International Nuclear Information System (INIS)

Wang Haiyan; Chen Xiongwen; Zhou Xiaoying; Zhang Lebo; Zhou Guanghui

2012-01-01

We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.

X-ray diffraction study of epitaxial heterostructures of II-VI CdTe and ZnTe semiconductors; Etude par diffraction de rayons X d`heterostructures epitaxiees a base des semi-conducteurs II-VI CdTe et ZnTe

Energy Technology Data Exchange (ETDEWEB)

Bouchet-Boudet, N.

1996-10-07

This work deals with the structural study of II-VI semiconductor (CdTe and ZnTe) heterostructures by X-ray diffraction and reflectivity. These heterostructures have a high lattice parameter misfit and are grown by Molecular Beam Epitaxy. Two main subjects are developed: the characterization of ZnTe wires, grown by step propagation on a CdTe (001) vicinal surface, and the study of the vertical correlations in Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattices and superlattices made of ZnTe fractional layers spaced by CdTe. The growth of organised system is up to date; its aim is to realize quantum boxes (or wires) superlattices which are laterally and vertically ordered. The deformation along the growth axis induced by a ZnTe fractional layer inserted in a CdTe matrix is modelled, in the kinematical approximation, to reproduce the reflectivity measured around the substrate (004) Bragg peak. The lateral periodicity of the wires, deposited on a vicinal surface is a new and difficult subject. Some results are obtained on a vertical superlattice grown on a 1 deg. mis-cut surface. The in-plane and out-of-plane correlation lengths of a Cd{sub 0.8}Zn{sub 0.2}Te / CdTe superlattice are deduced from the diffused scattered intensity measured at grazing incidence. The calculations are made within the `distorted Wave Born Approximation`. The vertical correlation in ZnTe boxes (or wines) superlattices can be measured around Bragg peaks. It is twice bigger in a superlattice grown on a 2 deg. mis-cut substrate than a nominal one. (author). 74 refs.

Quasi free-standing silicene in a superlattice with hexagonal boron nitride

KAUST Repository

Kaloni, T. P.; Tahir, M.; Schwingenschlö gl, Udo

2013-01-01

We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized

Phonon-induced optical superlattice.

Science.gov (United States)

de Lima, M M; Hey, R; Santos, P V; Cantarero, A

2005-04-01

We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

Superlattice photonic crystal as broadband solar absorber for high temperature operation.

Science.gov (United States)

Rinnerbauer, Veronika; Shen, Yichen; Joannopoulos, John D; Soljačić, Marin; Schäffler, Friedrich; Celanovic, Ivan

2014-12-15

A high performance solar absorber using a 2D tantalum superlattice photonic crystal (PhC) is proposed and its design is optimized for high-temperature energy conversion. In contrast to the simple lattice PhC, which is limited by diffraction in the short wavelength range, the superlattice PhC achieves solar absorption over broadband spectral range due to the contribution from two superposed lattices with different cavity radii. The superlattice PhC geometry is tailored to achieve maximum thermal transfer efficiency for a low concentration system of 250 suns at 1500 K reaching 85.0% solar absorptivity. In the high concentration case of 1000 suns, the superlattice PhC absorber achieves a solar absorptivity of 96.2% and a thermal transfer efficiency of 82.9% at 1500 K, amounting to an improvement of 10% and 5%, respectively, versus the simple square lattice PhC absorber. In addition, the performance of the superlattice PhC absorber is studied in a solar thermophotovoltaic system which is optimized to minimize absorber re-emission by reducing the absorber-to-emitter area ratio and using a highly reflective silver aperture.

COMPORTAMENTO A CORROSIONE E TRIBOCORROSIONE DI RIVESTIMENTI CERMET E CERMET/ SUPERLATTICE

OpenAIRE

Monticelli, C.; Zucchi, F.

2009-01-01

È stato studiato il comportamento a corrosione e tribocorrosione di riporti cermet e cermet/superlattice,applicati su campioni di acciaio. I riporti cermet consistono in riporti termici HVOF a spessore,di tipo WC-12Co o Cr3C2-37WC-18Me. I doppi riporti cermet/superlattice sono ottenuti sovrapponendoai depositi cermet citati un superlattice a base di nitruri, in cui si alternano strati di CrN e di NbN. Unasoluzione al 3.5 % di NaCl costituisce l’ambiente aggressivo. Le condizioni di tribocorro...

ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

Science.gov (United States)

Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

2018-05-01

In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

Transmission of electrons with flat passbands in finite superlattices

International Nuclear Information System (INIS)

Barajas-Aguilar, A H; Rodríguez-Magdaleno, K A; Martínez-Orozco, J C; Enciso-Muñoz, A; Contreras-Solorio, D A

2013-01-01

Using the transfer matrix method and the Ben Daniel-Duke equation for variable mass electrons propagation, we calculate the transmittance for symmetric finite superlattices where the width and the height of the potential barriers follow a linear dependence. The width and height of the barriers decreases from the center to the ends of the superlattice. The transmittance presents intervals of stopbands and quite flat passbands.

Tunable porous nanoallotropes prepared by post-assembly etching of binary nanoparticle superlattices

Science.gov (United States)

Udayabhaskararao, Thumu; Altantzis, Thomas; Houben, Lothar; Coronado-Puchau, Marc; Langer, Judith; Popovitz-Biro, Ronit; Liz-Marzán, Luis M.; Vuković, Lela; Král, Petr; Bals, Sara; Klajn, Rafal

2017-10-01

Self-assembly of inorganic nanoparticles has been used to prepare hundreds of different colloidal crystals, but almost invariably with the restriction that the particles must be densely packed. Here, we show that non-close-packed nanoparticle arrays can be fabricated through the selective removal of one of two components comprising binary nanoparticle superlattices. First, a variety of binary nanoparticle superlattices were prepared at the liquid-air interface, including several arrangements that were previously unknown. Molecular dynamics simulations revealed the particular role of the liquid in templating the formation of superlattices not achievable through self-assembly in bulk solution. Second, upon stabilization, all of these binary superlattices could be transformed into distinct “nanoallotropes”—nanoporous materials having the same chemical composition but differing in their nanoscale architectures.

Superlattices of platinum and palladium nanoparticles

Energy Technology Data Exchange (ETDEWEB)

MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

2000-04-06

The authors have used a nonionic inverse micelle synthesis technique to form nanoclusters of platinum and palladium. These nanoclusters can be rendered hydrophobic or hydrophilic by the appropriate choice of capping ligand. Unlike Au nanoclusters, Pt nanoclusters show great stability with thiol ligands in aqueous media. Alkane thiols, with alkane chains ranging from C{sub 6} to C{sub 18} were used as hydrophobic ligands, and with some of these they were able to form 2-D and/or 3-D superlattices of Pt nanoclusters as small as 2.7 nm in diameter. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function of the particle centers, from which they can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the gaps between particles within superlattice domains increases, but more slowly than one might expect, possibly indicating thiol chain interdigitation.

Terahertz emission of Bloch oscillators excited by electromagnetic field in lateral semiconductor superlattices

International Nuclear Information System (INIS)

Dodin, E.P.; Zharov, A.A.

2003-01-01

The effect of the strong high-frequency electromagnetic field on the lateral semiconductor superlattice is considered on the basis of the quasi-classical theory on the electron transport in the self-consistent wave arrangement. It is theoretically identified, that the lateral superlattice in the strong feed-up wave field may emit the terahertz radiation wave trains, which are associated with the periodical excitation of the Bloch oscillations in the superlattice. The conditions, required for the Bloch oscillators radiation observation, are determined. The spectral composition of the radiation, passing through the superlattice, and energy efficiency of multiplying the frequency, related to the Bloch oscillator excitation, are calculated [ru

Trends in (LaMnO3)n/(SrTiO3)m superlattices with varying layer thicknesses

KAUST Repository

Jilili, J.; Cossu, Fabrizio; Schwingenschlö gl, Udo

2015-01-01

We investigate the thickness dependence of the structural, electronic, and magnetic properties of (LaMnO3)n/(SrTiO3)m (n, m = 2, 4, 6, 8) superlattices using density functional theory. The electronic structure turns out to be highly sensitive

Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

International Nuclear Information System (INIS)

Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

2012-01-01

Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

Cubic AlGaN/GaN structures for device application

Energy Technology Data Exchange (ETDEWEB)

Schoermann, Joerg

2007-05-15

The aim of this work was the growth and the characterization of cubic GaN, cubic AlGaN/GaN heterostructures and cubic AlN/GaN superlattice structures. Reduction of the surface and interface roughness was the key issue to show the potential for the use of cubic nitrides in futur devices. All structures were grown by plasma assisted molecular beam epitaxy on free standing 3C-SiC (001) substrates. In situ reflection high energy electron diffraction was first investigated to determine the Ga coverage of c-GaN during growth. Using the intensity of the electron beam as a probe, optimum growth conditions were found when a 1 monolayer coverage is formed at the surface. GaN samples grown under these conditions reveal excellent structural properties. On top of the c-GaN buffer c-AlGaN/GaN single and multiple quantum wells were deposited. The well widths ranged from 2.5 to 7.5 nm. During growth of Al{sub 0.15}Ga{sub 0.85}N/GaN quantum wells clear reflection high energy electron diffraction oscillations were observed indicating a two dimensional growth mode. We observed strong room-temperature, ultraviolet photoluminescence at about 3.3 eV with a minimum linewidth of 90 meV. The peak energy of the emission versus well width is reproduced by a square-well Poisson- Schroedinger model calculation. We found that piezoelectric effects are absent in c-III nitrides with a (001) growth direction. Intersubband transition in the wavelength range from 1.6 {mu}m to 2.1 {mu}m was systematically investigated in AlN/GaN superlattices (SL), grown on 100 nm thick c-GaN buffer layers. The SLs consisted of 20 periods of GaN wells with a thickness between 1.5 nm and 2.1 nm and AlN barriers with a thickness of 1.35 nm. The first intersubband transitions were observed in metastable cubic III nitride structures in the range between 1.6 {mu}m and 2.1 {mu}m. (orig.)

Possible THz gain in superlattices at a stable operation point

DEFF Research Database (Denmark)

Wacker, Andreas; Allen, S. J.; Scott, J. S.

1997-01-01

We demonstrate that semiconductor superlattices may provide gain at THz frequencies at an operation point which is stable against fluctuations at lower frequency. While an explicit experimental demonstration for the sample considered could not be achieved, the underlying principle of quantum resp...... response is quite general and may prove successful for differently designed superlattices....

Structure and transport properties of coherently strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3}/SrTiO{sub 3} superlattices

Energy Technology Data Exchange (ETDEWEB)

Lu, Yafeng [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner Str. 8, 85748 Garching (Germany); Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xi' an, Shaanxi 710016 (China); Klein, J.; Herbstritt, F.; Philipp, J.B.; Marx, A.; Alff, L.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner Str. 8, 85748 Garching (Germany); Zhang, H. [Engineering Center of Electronic Information Materials and Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

2005-07-01

We have prepared high quality, coherently strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3}/SrTiO{sub 3} superlattices with different modulation periods by laser molecular beam epitaxy on (001) SrTiO{sub 3} and NdGaO{sub 3} substrates. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). All superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.02 ). The in-plane coherency strain was varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting tetragonal distortion of LCMO. The c-axis lattice parameter of LCMO could be continuously changed from 3.87 Aa to 3.79 Aa. The interface roughness was analyzed by offset low-angle X-ray reflectivity and low-angle rocking curve measurements. It was found to be of the order of one unit cell with a significant part of the roughness being vertically correlated. The strain induced tetragonal distortion of LCMO was found to cause strong reduction of the paramagnetic to ferromagnetic transition temperature from about 260 to 120 K and an increase of resistivity. The transport properties in the paramagnetic regime could be well described by a small polaron hopping model. The lattice distortions were found to result in a significant increase of the polaron trapping energy. Our results show that coherently strain superlattices are an interesting model system for the systematic study of the effect of lattice distortions on the magnetic and electronic properties of the doped manganites. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Electrochemical growth of highly oriented organic-inorganic superlattices using solid-supported multilamellar membranes as templates.

Science.gov (United States)

Xing, Li-Li; Li, Da-Peng; Hu, Shu-Xin; Jing, Huai-Yu; Fu, Honglan; Mai, Zhen-Hong; Li, Ming

2006-02-08

Controllable depositing of relatively thick inorganic sublayers into organic templates to fabricate organic-inorganic superlattices is of great importance. We report a novel approach to fabricating phospholipid/Ni(OH)(2) superlattices by electrochemical deposition of the inorganic component into solid-supported multilamellar templates. The well-ordered and highly oriented multilamellar templates are produced by spreading small drops of lipid solution on silicon surfaces and letting the solvent evaporate slowly. The templates which are used as working electrodes preserve the lamellar structure in the electrolyte solution. The resulting superlattices are highly oriented. The thickness of the nickel hydroxide is controlled by the concentration of nickel ions in the electrolyte bath. The electron density profiles derived from the X-ray diffraction data reveal that the thickness of the nickel hydroxide sublayers increases from 15 to 27 A as the concentration of nickel nitrate increases from 0.005 mol/L to 0.08 mol/L. We expect that the new method can be extended to depositing a variety of inorganic components including metals, oxides, and semiconductors.

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

Energy Technology Data Exchange (ETDEWEB)

Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

2014-09-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

International Nuclear Information System (INIS)

Wang, C.; Wang, F.; Cao, J. C.

2014-01-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation

Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

Science.gov (United States)

Wang, C; Wang, F; Cao, J C

2014-09-01

Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

Science.gov (United States)

Dhar, S.; Das, U.; Bhattacharya, P. K.

1986-01-01

Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

Surface phonon polaritons in semi-infinite semiconductor superlattices

International Nuclear Information System (INIS)

Nkoma, J.S.

1986-07-01

Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

Superlattices: problems and new opportunities, nanosolids

Directory of Open Access Journals (Sweden)

Tsu Raphael

2011-01-01

Full Text Available Abstract Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids.

Superlattice formation lifting degeneracy protected by nonsymmorphic symmetry through a metal-insulator transition in RuAs

Science.gov (United States)

Kotegawa, Hisashi; Takeda, Keiki; Kuwata, Yoshiki; Hayashi, Junichi; Tou, Hideki; Sugawara, Hitoshi; Sakurai, Takahiro; Ohta, Hitoshi; Harima, Hisatomo

2018-05-01

A single crystal of RuAs obtained with the Bi-flux method shows obvious successive metal-insulator transitions at TMI 1˜255 K and TMI 2˜195 K. The x-ray diffraction measurement reveals the formation of a superlattice of 3 ×3 ×3 of the original unit cell below TMI 2, accompanied by a change of the crystal system from the orthorhombic structure to the monoclinic one. Simple dimerization of the Ru ions is not seen in the ground state. The multiple As sites observed in the nuclear quadrupole resonance spectrum also demonstrate the formation of the superlattice in the ground state, which is clarified to be nonmagnetic. The divergence in 1 /T1 at TMI 1 shows that a symmetry lowering by the metal-insulator transition is accompanied by strong critical fluctuations of some degrees of freedom. Using the structural parameters in the insulating state, the first-principles calculation reproduces successfully the reasonable size of nuclear quadrupole frequencies νQ for the multiple As sites, ensuring the high validity of the structural parameters. The calculation also gives a remarkable suppression in the density of states near the Fermi level, although the gap opening is insufficient. A coupled modulation of the calculated Ru d -electron numbers and the crystal structure proposes the formation of a charge density wave in RuAs. Some lacking factors remain, but it is shown that a lifting of degeneracy protected by the nonsymmorphic symmetry through the superlattice formation is a key ingredient for the metal-insulator transition in RuAs.

Molecular-scale noncontact atomic force microscopy contrasts in topography and energy dissipation on c(4x2) superlattice structures of alkanethiol self-assembled monolayers

OpenAIRE

Fukuma, Takeshi; Ichii, Takashi; Kobayashi, Kei; Yamada, Hirofumi; Matsushige, Kazumi

2004-01-01

Alkanethiol self-assembledmonolayers formed on Au(111) surfaces were investigated by noncontact atomic force microscopy (NC-AFM). Dodecanethiol monolayers prepared at 78 °C were imaged by NC-AFM, which revealed that the film is composed predominantly of two different phases of c(4×2)superlattice structures. The obtained molecular-scale NC-AFM contrasts are discussed in comparison with previously reported scanning tunneling microscopy images. We found that the energy dissipation image exhibits...

Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

DEFF Research Database (Denmark)

Mizeikis, V.; Birkedal, Dan; Langbein, Wolfgang Werner

1997-01-01

Coherent exciton dynamics in a GaAs/AlxGa1-xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One...

Interface properties of superlattices with artificially broken symmetry

International Nuclear Information System (INIS)

Lottermoser, Th.; Yamada, H.; Matsuno, J.; Arima, T.; Kawasaki, M.; Tokura, Y.

2007-01-01

We have used superlattices made of thin layers of transition metal oxides to design the so-called multiferroics, i.e. materials possessing simultaneously an electric polarization and a magnetic ordering. The polarization originates from the asymmetric stacking order accompanied by charge transfer effects, while the latter one also influences the magnetic properties of the interfaces. Due to the breaking of space and time-reversal symmetry by multiple ordering mechanism magnetic second harmonic generation is proven to be an ideal method to investigate the electric and magnetic properties of the superlattices

Nanophysics in graphene: neutrino physics in quantum rings and superlattices.

Science.gov (United States)

Fertig, H A; Brey, Luis

2010-12-13

Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.

Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media

International Nuclear Information System (INIS)

Arana, J I; Bonilla, L L; Grahn, H T

2011-01-01

Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods. These superlattices can also support pulses of the electric field. Pulses moving downstream with the flux of electrons can be constructed from their component wave fronts, whereas pulses advancing upstream do so slowly and experience saltatory motion: they change slowly in long intervals of time separated by fast transitions during which the pulses jump to the previous superlattice period. Photoexcited superlattices can also behave as oscillatory media and exhibit wave trains. (paper)

XYO{sub 3} (X = K, Na; Y = Nb, Ta) based superlattices for photocatalysis

Energy Technology Data Exchange (ETDEWEB)

Wang, Guang-Zhao; Chen, Xiao-Rui; Yuan, Hong-Kuan; Kuang, An-Long [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Chen, Hong [School of Physical Science and Technology, Southwest University, Chongqing 400715 (China); Key Laboratory of Luminescent and Real-Time Analytical Chemistry, Ministry of Education, College of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715 (China)

2017-05-15

The photocatalytic activities of XYO{sub 3} (X = K, Na; Y = Ta, Nb) and XYO{sub 3}/X1Y1O{sub 3} (X, X1 = K, Na; Y, Y1 = Ta, Nb) systems are investigated by using hybrid density functional. All the XYO{sub 3} and XYO{sub 3}/X1Y1O{sub 3} systems are indirect band gap semiconductors, and the band gap of KNbO{sub 3}/KTaO{sub 3} is smaller than those of KNbO{sub 3} and KTaO{sub 3}, while the band gaps of KNbO{sub 3}/NaNbO{sub 3}, KNbO{sub 3}/NaTaO{sub 3}, KTaO{sub 3}/NaNbO{sub 3}, KTaO{sub 3}/NaTaO{sub 3}, and NaNbO{sub 3}/NaTaO{sub 3} are respectively between the band gaps of these two crystals which make up these superlattices. The electronic structure of KNbO{sub 3}/NaTaO{sub 3} is the same as that of KTaO{sub 3}/NaNbO{sub 3} since both have the same component and similar crystal structure. The band edges of all the considered superlattices are thermodynamically allowed for the water reduction and oxidation processes, and therefore, they could be used for photocatalytic water splitting. Band structures for (i) KNbO{sub 3}/KTaO{sub 3}, (ii) KNbO{sub 3}/NaNbO{sub 3}, (iii) KNbO{sub 3}/NaTaO{sub 3}, (iv) KTaO{sub 3}/NaNbO{sub 3}, (v) KTaO{sub 3}/NaTaO{sub 3}, and (vi) NaNbO{sub 3}/NaTaO{sub 3} superlattices. The horizontal dashed lines represent the Fermi levels. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Superlattices assembled through shape-induced directional binding

Science.gov (United States)

Lu, Fang; Yager, Kevin G.; Zhang, Yugang; Xin, Huolin; Gang, Oleg

2015-04-01

Organization of spherical particles into lattices is typically driven by packing considerations. Although the addition of directional binding can significantly broaden structural diversity, nanoscale implementation remains challenging. Here we investigate the assembly of clusters and lattices in which anisotropic polyhedral blocks coordinate isotropic spherical nanoparticles via shape-induced directional interactions facilitated by DNA recognition. We show that these polyhedral blocks--cubes and octahedrons--when mixed with spheres, promote the assembly of clusters with architecture determined by polyhedron symmetry. Moreover, three-dimensional binary superlattices are formed when DNA shells accommodate the shape disparity between nanoparticle interfaces. The crystallographic symmetry of assembled lattices is determined by the spatial symmetry of the block's facets, while structural order depends on DNA-tuned interactions and particle size ratio. The presented lattice assembly strategy, exploiting shape for defining the global structure and DNA-mediation locally, opens novel possibilities for by-design fabrication of binary lattices.

Atomic stacking and van-der-Waals bonding in GeTe-Sb2Te3 superlattices

NARCIS (Netherlands)

Momand, J.; Lange, F.R.L.; Wang, R.; Boschker, J.E.; Verheijen, M.A.; Calarco, R.; Wuttig, M.; Kooi, B.J.

2016-01-01

GeTe–Sb2Te3 superlattices have attracted major interest in the field of phase-change memories due to their improved properties compared with their mixed counterparts. However, their crystal structure and resistance-switching mechanism are currently not clearly understood. In this work epitaxial

Optical properties of metallic Fibonacci quasi-superlattice

International Nuclear Information System (INIS)

Feng Weiguo; Liu Nianhua; Wu Xiang

1990-06-01

Within the approximation of hydrodynamic model, the optical properties of the metallic Fibonacci quasi-superlattice have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the transfer-matrix method and taking account of damping effects, we have discussed the electromagnetic normal modes for the quasisuperlattice in the rational approximation. The related dispersion curves explain the reflection spectra well, and we found that similar to the reflectivities, both real part and imagine part of the dispersion relation pattern has a rich structure of self-similarity. With the increasing of the generation number, the electromagnetic modes all become critical. (author). 13 refs, 3 figs

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

NARCIS (Netherlands)

Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

Ionic Potential and Band Narrowing as a Source of Orbital Polarization in Nickelate/Insulator Superlattices

Science.gov (United States)

Georgescu, Alexandru B.; Disa, Ankit S.; Kumah, Divine P.; Ismail-Beigi, Sohrab; Walker, Frederick J.; Ahn, Charles H.

Nickelate interfaces display complex, interacting electronic properties such as thickness dependent metal-insulator transitions. One large body of effort involving nickelates has aimed to split the energies of the Ni 3d orbitals (orbital polarization) to make the resulting band structure resemble that of cuprate superconductors. The most commonly studied interfacial system involves superlattices of alternating nickelate and insulating perovksite-structure layers; the resulting orbital polarization at the nickelate-insulator interface is understood as being due to confinement or structural symmetry breaking. By using first principles theory on the NdNiO3/NdAlO3 superlattice, we show that another important source of orbital polarization stems from electrostatic effects: the more ionic nature of the cations in the insulator (when compared to the nickelate) can shift the relative orbital energies of the Ni. We use density functional theory (DFT) and add electronic correlations via slave-bosons to describe the effect of correlation-induced band narrowing on the orbital polarization. Work supported by NSF Grant MRSEC DMR-1119826.

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

Science.gov (United States)

Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

2012-02-20

GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices

Science.gov (United States)

Angelova, T.; Cros, A.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Shtinkov, N.; Deneke, Ch.; Schmidt, O. G.

2011-12-01

In this work we get insight into the multilayer structure of rolled-up microtube radial superlattices (RSLs) by the study of the optical and folded acoustic phonon modes of individual microtubes. Raman results show shifts of the InGaAs and GaAs related longitudinal optical modes that can be related to the strain state of the tubes. The folding of the acoustic modes has been related with the periodicity of the artificial superlattice formed by the multiple turns of the heterostructures. Information on the electronic structure and optical transitions of RSLs has been obtained by surface photovoltage spectroscopy. Room temperature spectra reveal several electronic transitions with energies below 1.3 eV. These transitions have been identified as originating from defect levels at the interfaces, as well as from the RSLs and the In0.215Ga0.785As/GaAs quantum well in the unfolded regions of the sample.

Bottom-up meets top-down: tailored raspberry-like Fe3O4-Pt nanocrystal superlattices.

Science.gov (United States)

Qiu, Fen; Vervuurt, René H J; Verheijen, Marcel A; Zaia, Edmond W; Creel, Erin B; Kim, Youngsang; Urban, Jeffrey J; Bol, Ageeth A

2018-03-29

Supported catalysts are widely used in industry and can be optimized by tuning the composition, chemical structure, and interface of the nanoparticle catalyst and oxide support. Here we firstly combine a bottom up colloidal synthesis method with a top down atomic layer deposition (ALD) process to achieve a raspberry-like Pt-decorated Fe3O4 (Fe3O4-Pt) nanoparticle superlattices. This nanocomposite ensures the precision of the catalyst/support interface, improving the catalytic efficiency of the Fe3O4-Pt nanocomposite system. The morphology of the hybrid nanocomposites resulting from different cycles of ALD was monitored by scanning transmission electron microscopy, giving insight into the nucleation and growth mechanism of the ALD process. X-ray photoelectron spectroscopy studies confirm the anticipated electron transfer from Fe3O4 to Pt through the nanocomposite interface. Photocurrent measurement further suggests that Fe3O4 superlattices with controlled decoration of Pt have substantial promise for energy-efficient photoelectrocatalytic oxygen evolution reaction. This work opens a new avenue for designing supported catalyst architectures via precisely controlled decoration of single component superlattices with noble metals.

Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

Directory of Open Access Journals (Sweden)

A Bianconi

2006-09-01

Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

Electron dynamics in intentionally disordered semiconductor superlattices

International Nuclear Information System (INIS)

Diez, E.; Sanchez, A.; Dominguez-Adame, F.; Berman, G.P.

1996-01-01

We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domacute inguez-Adame et al.[Phys. Rev. B 51, 14359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. copyright 1996 The American Physical Society

Magnetic quantum oscillations of diagonal conductivity in a two-dimensional conductor with a weak square superlattice modulation under conditions of the integer quantum Hall effect

International Nuclear Information System (INIS)

Gvozdikov, V M; Taut, M

2009-01-01

We report on analytical and numerical studies of the magnetic quantum oscillations of the diagonal conductivity σ xx in a two-dimensional conductor with a weak square superlattice modulation under conditions of the integer quantum Hall (IQHE) effect. The quantum Hall effect in such a system differs from the conventional IQHE, in which the finite width of the Landau bands is due to disorder only. The superlattice modulation potential yields a fractal splitting of the Landau levels into Hofstadter minibands. For rational flux through a unit cell, the minibands have a finite width and intrinsic dispersion relations. We consider a regime, now accessible experimentally, in which disorder does not wash out the fractal internal gap structure of the Landau bands completely. We found the following distinctions from the conventional IQHE produced by the superlattice: (i) the peaks in diagonal conductivity are split due to the Hofstadter miniband structure of Landau bands; (ii) the number of split peaks in the bunch, their positions and heights depend irregularly on the magnetic field and the Fermi energy; (iii) the gaps between the split Landau bands (and related quantum Hall plateaus) become narrower with the superlattice modulation than without it.

The hyperfine properties of a hydrogenated Fe/V superlattice

Energy Technology Data Exchange (ETDEWEB)

Elzain, M., E-mail: elzain@squ.edu.om; Al-Barwani, M.; Gismelseed, A.; Al-Rawas, A.; Yousif, A.; Widatallah, H.; Bouziane, K.; Al-Omari, I. [Sultan Qaboos University, Department of Physics, College of Science (Oman)

2012-03-15

We study the effect of hydrogen on the electronic, magnetic and hyperfine structures of an iron-vanadium superlattice consisting of three Fe monolayers and nine V monolayers. The contact charge density ({rho}), the contact hyperfine field (B{sub hf}) and the electronic field gradient (EFG) at the Fe sites for different H locations and H fillings are calculated using the first principle full-potential linear-augmented-plane-wave (FP-LAPW) method. It is found that sizeable changes in the hyperfine properties are obtained only when H is in the interface region.

Thermoelectric properties of IV–VI-based heterostructures and superlattices

Energy Technology Data Exchange (ETDEWEB)

Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

2015-07-15

Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV�

Type II superlattice technology for LWIR detectors

Science.gov (United States)

Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

2016-05-01

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

Bulk-like-phonon polaritons in one-dimensional photonic superlattices

Science.gov (United States)

Gómez-Urrea, H. A.; Duque, C. A.; Mora-Ramos, M. E.

2017-05-01

We investigate the properties of a one-dimensional photonic superlattice made of alternating layers of air and wurtzite aluminum nitride. The Maxwell equations are solved for any admissible values of the angle of incidence by means of the transfer matrix formalism. The band structure of the frequency spectrum is obtained, as well as the density of states and transmittance associated to both the TM and TE modes. The dispersion relations indicate that for oblique incidence and TM modes there is a component of the electric field oriented along the growth direction of the structure that couples with the longitudinal optical phonon oscillations of the aluminum nitride thus leading to the appearance of longitudinal phonon polaritons in the system.

Structural and photoluminescence properties of Si-based nanosheet bundles rooted on Si substrates

Science.gov (United States)

Yuan, Peiling; Tamaki, Ryo; Kusazaki, Shinya; Atsumi, Nanae; Saito, Yuya; Kumazawa, Yuki; Ahsan, Nazmul; Okada, Yoshitaka; Ishida, Akihiro; Tatsuoka, Hirokazu

2018-04-01

Si-based nanosheet bundles were synthesized by the extraction of Ca atoms from CaSi2 microwalls grown on Si substrates by inositol hexakisphosphate solution or thermal treatment in FeCl2 vapor. The structural and photoluminescence properties of the Si-based nanosheet bundles were examined. The photoluminescence emissions in the visible region were clearly observed, and the temperature and excitation intensity dependences of the emissions were characterized. The observed Si-based nanosheets consist of thin Si layers, and a superlattice-like layered structural model is proposed to describe the Si-based nanosheet bundle structures and their photoluminescence property. The photoluminescence property of the nanosheets significantly depends on their treatment process. The luminescence mechanism of the nanosheets was discussed.

Effect of layer composition on band spectrum of CdxHg1-xTe - CdyHg1-yTe-type superlattices

International Nuclear Information System (INIS)

Gerchikov, L.G.; Subashiev, A.V.; Salman Dalla

1993-01-01

Evolution of energy spectrum of Cd x Hg 1-x Te -Cd y Hg 1-y Te superlattices at variation of layer composition is considered. Transition from 3 type superlattice to 1 type superlattice occurring for y=0.16 is studied comprehensively. In this case, dependence of the width of superlattice forbidden zone on layer thickness is shown to become more smooth, than in CdTe - HgTe superlattice and it gives more possibilities to use such superlattices for making IR phototransistors. 10 refs., 4 figs

Full Polarization Analysis of Resonant Superlattice and Forbidden x-ray Reflections in Magnetite

International Nuclear Information System (INIS)

Wilkins, S.B.; Bland, S.R.; Detlefs, B.; Beale, T.A.W.; Mazzoli, C.; Joly, Y.; Hatton, P.D.; Lorenzo, J.E.; Brabers, V.A.M.

2009-01-01

Despite being one of the oldest known magnetic materials, and the classic mixed valence compound, thought to be charge ordered, the structure of magnetite below the Verwey transition is complex and the presence and role of charge order is still being debated. Here, we present resonant x-ray diffraction data at the iron K-edge on forbidden (0, 0, 2n+1) C and superlattice (0, 0, 2n+1/2)C reflections. Full linear polarization analysis of the incident and scattered light was conducted in order to explore the origins of the reflections. Through simulation of the resonant spectra we have confirmed that a degree of charge ordering takes place, while the anisotropic tensor of susceptibility scattering is responsible for the superlattice reflections below the Verwey transition. We also report the surprising result of the conversion of a significant proportion of the scattered light from linear to nonlinear polarization.

THz elastic dynamics in finite-size CoFeB-MgO phononic superlattices

Energy Technology Data Exchange (ETDEWEB)

Ulrichs, Henning, E-mail: hulrich@gwdg.de; Meyer, Dennis; Müller, Markus; Wittrock, Steffen; Mansurova, Maria [I. Physical Institute, Georg-August University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Walowski, Jakob; Münzenberg, Markus [Institute of Physics, Ernst-Moritz-Arndt University of Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany)

2016-10-14

In this article, we present the observation of coherent elastic dynamics in a nano-scale phononic superlattice, which consists of only 4 bilayers. We demonstrate how ultra-short light pulses with a length of 40 fs can be utilized to excite a coherent elastic wave at 0.535 THz, which persist over about 20 ps. In later steps of the elastic dynamics, modes with frequency of 1.7 THz and above appear. All these modes are related to acoustic band gaps. Thus, the periodicity strongly manifests in the wave physics, although the system under investigation has only a small number of spatial periods. To further illustrate this, we show how by breaking the translational invariance of the superlattice, these features can be suppressed. Discussed in terms of phonon blocking and radiation, we elucidate in how far our structures can be considered as useful building blocks for phononic devices.

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

Science.gov (United States)

Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

2017-02-01

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

Theory of transmission through disordered superlattices

DEFF Research Database (Denmark)

Wacker, Andreas; Hu, Ben Yu-Kuang

1999-01-01

We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission through samples with large cross sections. These calculations can be performed...

High-electric-field quantum transport theory for semiconductor superlattices

International Nuclear Information System (INIS)

Nguyen Hong Shon; Nazareno, H.N.

1995-12-01

Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs

Transport in a magnetic field modulated graphene superlattice.

Science.gov (United States)

Li, Yu-Xian

2010-01-13

Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.

Exploration of molecular interactions in cholesterol superlattices: effect of multibody interactions.

Science.gov (United States)

Huang, Juyang

2002-08-01

Experimental evidences have indicated that cholesterol may adapt highly regular lateral distributions (i.e., superlattices) in a phospholipid bilayer. We investigated the formations of superlattices at cholesterol mole fraction of 0.154, 0.25, 0.40, and 0.5 using Monte Carlo simulation. We found that in general, conventional pairwise-additive interactions cannot produce superlattices. Instead, a multibody (nonpairwise) interaction is required. Cholesterol superlattice formation reveals that although the overall interaction between cholesterol and phospholipids is favorable, it contains two large opposing components: an interaction favoring cholesterol-phospholipid mixing and an unfavorable acyl chain multibody interaction that increases nonlinearly with the number of cholesterol contacts. The magnitudes of interactions are in the order of kT. The physical origins of these interactions can be explained by our umbrella model. They most likely come from the requirement for polar phospholipid headgroups to cover the nonpolar cholesterol to avoid the exposure of cholesterol to water and from the sharp decreasing of acyl chain conformation entropy due to cholesterol contact. This study together with our previous work demonstrate that the driving force of cholesterol-phospholipid mixing is a hydrophobic interaction, and multibody interactions dominate others over a wide range of cholesterol concentration.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio

2013-01-28

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

High mobility half-metallicity in the (LaMnO3)2/(SrTiO3)8 superlattice

KAUST Repository

Cossu, Fabrizio; Schwingenschlö gl, Udo; Singh, Nirpendra

2013-01-01

First principles calculations have been performed to investigate the LaMnO3/SrTiO3 superlattice. Structural relaxation within the generalized gradient approximation results in no significant tiltings or rotations of oxygen octahedra, but in distinct distortions in the SrTiO3 region. Taking into account the onsite Coulomb interaction, we find that the Mn spins order ferromagnetically, in contrast to the antiferromagnetic state of bulk LaMnO3. Most importantly, the interface strain combined with charge transfer across the interface induces half-metallicity within the MnO2 layers. The superlattice is particulary interesting for spintronics applications because the half-metallic states are characterized by an extraordinary high mobility.

Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

Science.gov (United States)

Li, X. J.; Yu, J. H.; Luo, K.; Wu, Z. H.; Yang, W.

2018-04-01

We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene magnetic superlattice (PMS) orientations can give rise to distinct energy spectra, i.e. tuning the intrinsic electronic anisotropy. Rashba spin-orbit coupling (RSOC) develops a spin-splitting energy dispersion in this phosphorene magnetic superlattice. Anisotropic momentum-dependent carrier distributions along/perpendicular to the magnetic strips are demonstrated. The manipulations of these exotic electronic properties by tuning superlattice geometry, magnetic field and the RSOC term are addressed systematically. Accordingly, we find bright-to-dark transitions in the ground-state electron-hole pair transition rate spectrum and the PMS orientation-dependent anisotropic optical absorption spectrum. This feature offers us a practical way of modulating the electronic anisotropy in phosphorene by magnetic superlattice configurations and detecting this modulation capability by using an optical technique.

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.

2015-03-24

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Enhanced thermoelectric figure-of-merit in thermally robust, nanostructured superlattices based on SrTiO3

KAUST Repository

Abutaha, Anas I.; Sarath Kumar, S. R.; Li, Kun; Dehkordi, Arash Mehdizadeh; Tritt, Terry M.; Alshareef, Husam N.

2015-01-01

Thermoelectric (TE) metal oxides overcome crucial disadvantages of traditional heavy-metal-alloy-based TE materials, such as toxicity, scarcity, and instability at high temperatures. Here, we report the TE properties of metal oxide superlattices, composed from alternating layers of 5% Pr3+-doped SrTiO3-δ (SPTO) and 20% Nb5+-doped SrTiO3-δ (STNO) fabricated using pulsed laser deposition (PLD). Excellent stability is established for these superlattices by maintaining the crystal structure and reproducing the TE properties after long-time (20 h) annealing at high temperature (∼1000 K). The introduction of oxygen vacancies as well as extrinsic dopants (Pr3+ and Nb5+), with different masses and ionic radii, at different lattice sites in SPTO and STNO layers, respectively, results in a substantial reduction of thermal conductivity via scattering a wider range of phonon spectrum without limiting the electrical transport and thermopower, leading to an enhancement in the figure-of-merit (ZT). The superlattice composed of 20 SPTO/STNO pairs, 8 unit cells of each layer, exhibits a ZT value of 0.46 at 1000 K, which is the highest among SrTiO3-based thermoelectrics. © 2015 American Chemical Society.

Stability and dynamic of strain mediated adatom superlattices on Cu

Science.gov (United States)

Kappus, Wolfgang

2013-03-01

Substrate strain mediated adatom equilibrium density distributions have been calculated for Cu surfaces using two complementing methods. A hexagonal adatom superlattice in a coverage range up to 0.045 ML is derived for repulsive short range interactions. For zero short range interactions a hexagonal superstructure of adatom clusters is derived in a coverage range about 0.08 ML. Conditions for the stability of the superlattice against formation of dimers or clusters and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusion are proposed from the analogy with bulk lattice dynamics and methods for measurement are suggested. The recently put forward explanation of surface state mediated interactions for superstructures found in scanning tunneling microscopy experiments is put in question and strain mediated interactions are proposed as an alternative.

The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

Energy Technology Data Exchange (ETDEWEB)

Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. [and others

1997-06-01

We describe the metal-organic chemical vapor deposition growth of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500{degrees}C, and 200 torr in a horizontal quartz reactor using TMIn, TESb, AsH{sub 3},and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 4.4 {mu}m. Excellent performance was observed for an SLS LED and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 {mu}m with a maximum operating temperature of 240 K and a characteristic temperature of 33 K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 {mu}m with 80 {mu}W of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 gm at 120 K.

Rectification of terahertz radiation in semiconductor superlattices in the absence of domains

International Nuclear Information System (INIS)

Isohätälä, J; Alekseev, K N

2012-01-01

We study theoretically the dynamical rectification of a terahertz AC electric field, i.e. the DC current and voltage response to the incident radiation, in strongly coupled semiconductor superlattices. We address the problem of stability against electric field domains: a spontaneous DC voltage is known to appear exactly for parameters for which a spatially homogeneous electron distribution is unstable. We show that by applying a weak direct current bias the rectifier can be switched from a state with zero DC voltage to one with a finite voltage in full absence of domains. The switching occurs near the conditions of dynamical symmetry breaking of an unbiased semiconductor superlattice. Therefore our scheme allows for the generation of DC voltages that would otherwise be unreachable due to domain instabilities. Furthermore, for realistic, highly doped wide miniband superlattices at room temperature, the generated DC field can be nearly quantized, that is, be approximately proportional to an integer multiple of ħω/ea where a is the superlattice period and ω is the AC field frequency. (paper)

Alternating current-driven graphene superlattices: Kinks, dissipative solitons, dynamic chaotization

International Nuclear Information System (INIS)

Kryuchkov, S. V.; Kukhar', E. I.

2015-01-01

The possibility of the solitary electromagnetic wave formation in graphene superlattice subjected to the electromagnetic radiation is discussed. The chaotic behavior of the electron subsystem in graphene superlattice is studied by Melnikov method. Dynamic chaos of electrons is shown to appear for certain intervals of frequencies of incident electromagnetic radiation. The frequency dependence of the radiation critical amplitude which determines the bound of chaos appearance is investigated. The values of radiation frequency at which the critical amplitude increases indefinitely were found

Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

KAUST Repository

Choi, Joshua J.; Bealing, Clive R.; Bian, Kaifu; Hughes, Kevin J.; Zhang, Wenyu; Smilgies, Detlef-M.; Hennig, Richard G.; Engstrom, James R.; Hanrath, Tobias

2011-01-01

The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

KAUST Repository

Choi, Joshua J.

2011-03-09

The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

Superlattice Microstructured Optical Fiber

Science.gov (United States)

Tse, Ming-Leung Vincent; Liu, Zhengyong; Cho, Lok-Hin; Lu, Chao; Wai, Ping-Kong Alex; Tam, Hwa-Yaw

2014-01-01

A generic three-stage stack-and-draw method is demonstrated for the fabrication of complex-microstructured optical fibers. We report the fabrication and characterization of a silica superlattice microstructured fiber with more than 800 rhomboidally arranged air-holes. A polarization-maintaining fiber with a birefringence of 8.5 × 10−4 is demonstrated. The birefringent property of the fiber is found to be highly insensitive to external environmental effects, such as pressure. PMID:28788693

Nanoscale form dictates mesoscale function in plasmonic DNA–nanoparticle superlattices

Energy Technology Data Exchange (ETDEWEB)

Ross, Michael B.; Ku, Jessie C.; Vaccarezza, Victoria M.; Schatz, George C.; Mirkin , Chad A. (NWU)

2016-06-15

The nanoscale manipulation of matter allows properties to be created in a material that would be difficult or even impossible to achieve in the bulk state. Progress towards such functional nanoscale architectures requires the development of methods to precisely locate nanoscale objects in three dimensions and for the formation of rigorous structure–function relationships across multiple size regimes (beginning from the nanoscale). Here, we use DNA as a programmable ligand to show that two- and three-dimensional mesoscale superlattice crystals with precisely engineered optical properties can be assembled from the bottom up. The superlattices can transition from exhibiting the properties of the constituent plasmonic nanoparticles to adopting the photonic properties defined by the mesoscale crystal (here a rhombic dodecahedron) by controlling the spacing between the gold nanoparticle building blocks. Furthermore, we develop a generally applicable theoretical framework that illustrates how crystal habit can be a design consideration for controlling far-field extinction and light confinement in plasmonic metamaterial superlattices.

Large negative differential resistance in graphene nanoribbon superlattices

Science.gov (United States)

Tseng, P.; Chen, C. H.; Hsu, S. A.; Hsueh, W. J.

2018-05-01

A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases.

A weakly coupled semiconductor superlattice as a harmonic hypersonic-electrical transducer

International Nuclear Information System (INIS)

Poyser, C L; Akimov, A V; Campion, R P; Kent, A J; Balanov, A G

2015-01-01

We study experimentally and theoretically the effects of high-frequency strain pulse trains on the charge transport in a weakly coupled semiconductor superlattice. In a frequency range of the order of 100 GHz such excitation may be considered as single harmonic hypersonic excitation. While travelling along the axis of the SL, the hypersonic acoustic wavepacket affects the electron tunnelling, and thus governs the electrical current through the device. We reveal how the change of current depends on the parameters of the hypersonic excitation and on the bias applied to the superlattice. We have found that the changes in the transport properties of the superlattices caused by the acoustic excitation can be largely explained using the current–voltage relation of the unperturbed system. Our experimental measurements show multiple peaks in the dependence of the transferred charge on the repetition rate of the strain pulses in the train. We demonstrate that these resonances can be understood in terms of the spectrum of the applied acoustic perturbation after taking into account the multiple reflections in the metal film serving as a generator of hypersonic excitation. Our findings suggest an application of the semiconductor superlattice as a hypersonic-electrical transducer, which can be used in various microwave devices. (paper)

Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

Science.gov (United States)

Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

2017-12-01

The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices.

Science.gov (United States)

Ravichandran, Jayakanth; Yadav, Ajay K; Cheaito, Ramez; Rossen, Pim B; Soukiassian, Arsen; Suresha, S J; Duda, John C; Foley, Brian M; Lee, Che-Hui; Zhu, Ye; Lichtenberger, Arthur W; Moore, Joel E; Muller, David A; Schlom, Darrell G; Hopkins, Patrick E; Majumdar, Arun; Ramesh, Ramamoorthy; Zurbuchen, Mark A

2014-02-01

Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

Auger electron spectroscopy analysis of high metal content micro-structures grown by electron beam induced deposition

International Nuclear Information System (INIS)

Cicoira, F.; Hoffmann, P.; Olsson, C.O.A.; Xanthopoulos, N.; Mathieu, H.J.; Doppelt, P.

2005-01-01

An auger electron spectroscopy study was carried out on Rh-containing micro-structures grown by electron beam induced deposition (EBID) of the iso-structural and iso-electronic precursors [RhCl(PF 3 ) 2 ] 2 and [RhCl(CO) 2 ] 2 . A material containing between 55 and 60 at.% Rh was obtained from both precursors. The chemical composition of structures grown from the two different precursors indicates a similar decomposition mechanism. Deposits grown from [RhCl(PF 3 ) 2 ] 2 showed a chemical composition independent of electron energy and electron dose in the investigated range of conditions

Thermoelectric transport in superlattices

Energy Technology Data Exchange (ETDEWEB)

Reinecke, T L; Broido, D A

1997-07-01

The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

Visualizing period fluctuations in strained-layer superlattices with scanning tunneling microscopy

Science.gov (United States)

Kanedy, K.; Lopez, F.; Wood, M. R.; Gmachl, C. F.; Weimer, M.; Klem, J. F.; Hawkins, S. D.; Shaner, E. A.; Kim, J. K.

2018-01-01

We show how cross-sectional scanning tunneling microscopy (STM) may be used to accurately map the period fluctuations throughout epitaxial, strained-layer superlattices based on the InAs/InAsSb and InGaAs/InAlAs material systems. The concept, analogous to Bragg's law in high-resolution x-ray diffraction, relies on an analysis of the [001]-convolved reciprocal-space satellite peaks obtained from discrete Fourier transforms of individual STM images. Properly implemented, the technique enables local period measurements that reliably discriminate vertical fluctuations localized to within ˜5 superlattice repeats along the [001] growth direction and orthogonal, lateral fluctuations localized to within ˜40 nm along directions in the growth plane. While not as accurate as x-ray, the inherent, single-image measurement error associated with the method may be made as small as 0.1%, allowing the vertical or lateral period fluctuations contributing to inhomogeneous energy broadening and carrier localization in these structures to be pinpointed and quantified. The direct visualization of unexpectedly large, lateral period fluctuations on nanometer length scales in both strain-balanced systems supports a common understanding in terms of correlated interface roughness.

Fe-Substitution for Ni in Misch Metal-Based Superlattice Hydrogen Absorbing Alloys—Part 1. Structural, Hydrogen Storage, and Electrochemical Properties

Directory of Open Access Journals (Sweden)

Kwo-Hsiung Young

2016-11-01

Full Text Available The effects of Fe partially replacing Ni in a misch metal-based superlattice hydrogen absorbing alloy (HAA were studied. Addition of Fe increases the lattice constants and abundance of the main Ce2Ni7 phase, decreases the NdNi3 phase abundance, and increases the CaCu5 phase when the Fe content is above 2.3 at%. For the gaseous phase hydrogen storage (H-storage, Fe incorporation does not change the storage capacity or equilibrium pressure, but it does decrease the change in both entropy and enthalpy. With regard to electrochemistry, >2.3 at% Fe decreases both the full and high-rate discharge capacities due to the deterioration in both bulk transport (caused by decreased secondary phase abundance and consequent lower synergetic effect and surface electrochemical reaction (caused by the lower volume of the surface metallic Ni inclusions. In a low-temperature environment (−40 °C, although Fe increases the reactive surface area, it also severely hinders the ability of the surface catalytic, leading to a net increase in surface charge-transfer resistance. Even though Fe increases the abundance of the beneficial Ce2Ni7 phase with a trade-off for the relatively unfavorable NdNi3 phase, it also deteriorates the electrochemical performance due to a less active surface. Therefore, further surface treatment methods that are able to increase the surface catalytic ability in Fe-containing superlattice alloys and potentially reveal the positive contributions that Fe provides structurally are worth investigating in the future.

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

Energy Technology Data Exchange (ETDEWEB)

Prabhakar, Sanjay, E-mail: sprabhakar@wlu.ca [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Melnik, Roderick [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Bonilla, Luis L. [Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Raynolds, James E. [Drinker Biddle and Reath LLP, Washington, DC 20005 (United States)

2013-12-02

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.

Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

International Nuclear Information System (INIS)

Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis L.; Raynolds, James E.

2013-01-01

We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges

Effects of WC phase contents on the microstructure, mechanical properties and tribological behaviors of WC/a-C superlattice coatings

Energy Technology Data Exchange (ETDEWEB)

Pu, Jibin [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); He, Dongqing [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000 (China); University of Chinese Academy of Sciences, Beijing 100039 (China); Wang, Liping, E-mail: lpwang@licp.cas.cn [Key Laboratory of Marine Materials and Related Technologies, Key Laboratory of Marine Materials and Protective Technologies of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2015-12-01

Graphical abstract: - Highlights: • WC/a-C superlattice coatings were synthesized with various WC phase content. • Superlattice structure diminished residual stress and densified microstructure. • Nanocomposite coating with W 5.43 at.% achieved the optimal tribological properties. • Friction triggered WO{sub 3} lead to a low friction coefficient at 200 °C. - Abstract: Nanocomposite WC/a-C coatings with variable contents of tungsten carbide (WC{sub 1−x}) and amorphous carbon (a-C) were successfully fabricated using a magnetron sputtering process. The microstructure, mechanical properties and tribological behaviors of the as-fabricated coatings were investigated and compared. The results showed that the “superlattice coating” feature of an alternating multilayer structure with a-C and WC{sub 1−x} nanocrystallites layers on the nanoscale was formed. These multilayer superlattice structures led to diminished residual stress and improved the strength of the adhesion to the substrate. The WC/a-C coating with W 5.43 at.% exhibited low friction coefficients of 0.05 at 25 °C and 0.28 at 200 °C. This significant improvement in the tribological performances of the WC/a-C coating was mainly attributed to the superior “superlattice” microstructure and the formation of a continuously compacted tribofilms, which was rich in graphitized carbon at 25 °C and dominated by the friction triggered WO{sub 3} at 200 °C. Moreover, the WC/a-C coating with W 5.43 at.% achieved optimal anti-wear properties at 25 °C due to the synergistic combination of the enhancement effects of the WC{sub 1−x} nanoparticles and the partition effect from the transfer film that restricted direct contact of the steel ball with the coating and thus prevented further intense wear. The accelerated wear of the WC/a-C coating with the increase of the WC phase content at 200 °C might be due to the combination of oxidation wear and abrasive wear that originated from the WC{sub 1−x} phase.

Structural, chemical, and thermoelectric properties of Bi{sub 2}Te{sub 3} Peltier materials. Bulk, thin films, and superlattices

Energy Technology Data Exchange (ETDEWEB)

Peranio, Nicola

2008-07-01

In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi{sub 2}Te{sub 3} and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi{sub 2}(Te{sub 0.91}Se{sub 0.09}){sub 3} and p-type (Bi{sub 0.26}Sb{sub 0.74}){sub 1.98}(Te{sub 0.99}Se{sub 0.01}){sub 3.02} bulk materials synthesised by the Bridgman technique. (II) Bi{sub 2}Te{sub 3} thin films and Bi{sub 2}Te{sub 3}/Bi{sub 2}(Te{sub 0.88}Se{sub 0.12}){sub 3} superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF{sub 2} substrates with periods of {delta}-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to <5,-5,1> and an amplitude of about 10 pm and (ii) a wave vector parallel to {l_brace}1,0,10{r_brace} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

International Nuclear Information System (INIS)

Ozolins, V.; Wolverton, C.; Zunger, A.

1998-01-01

Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total-energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%), and Ni/Au (15%). We find that left-angle 001 right-angle is the elastically soft direction for biaxial expansion of Cu and Ni, but it is left-angle 201 right-angle for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along left-angle 111 right-angle and left-angle 001 right-angle behave like phase separating systems, while for left-angle 110 right-angle they behave like ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents. copyright 1998 The American Physical Society

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice \mathrm{InAs}/{\mathrm{InAs}}_{1-x}{\mathrm{Sb}}_x

Energy Technology Data Exchange (ETDEWEB)

Liu, Henan [Univ. of North Carolina, Charlotte, NC (United States). Optical Science and Engineering Graduate Program and Dept. of Electrical and Computer Engineering; Zhang, Yong [Univ. of North Carolina, Charlotte, NC (United States). Optical Science and Engineering Graduate Program and Dept. of Electrical and Computer Engineering; Steenbergen, Elizabeth H. [Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering; Liu, Shi [Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering; Lin, Zhiyuan [Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering; Zhang, Yong-Hang [Arizona State Univ., Tempe, AZ (United States). Center for Photonics Innovation and School of Electrical, Computer and Energy Engineering; Kim, Jeomoh [Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering; Ji, Mi-Hee [Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering; Detchprohm, Theeradetch [Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering; Dupuis, Russell D. [Georgia Inst. of Technology, Atlanta, GA (United States). Center for Compound Semiconductors and School of Electrical and Computer Engineering; Kim, Jin K. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hawkins, Samuel D. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Klem, John F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-09-26

The InAs/InAs_1-xSb_x superlattice system distinctly differs from two well-studied superlattice systems GaAs / AlAs and InAs/GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs/InAs_1-xSb_x system when compared to the other two systems. Here, we report a polarized Raman study of the vibrational properties of the InAs/InAs_1-xSb_x superlattices (SLs) as well as selected InAs_1-xSb_x alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like “forbidden” LO mode is observed in two parallel-polarization configurations. The InAs_1-xSb_x alloys lattice matched to the substrate (x_Sb ~ 0.09) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (x_Sb ~ 0.35) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs/InAs_1-xSb_x and InAs/GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of

Understanding the defect structure of solution grown zinc oxide

Energy Technology Data Exchange (ETDEWEB)

Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

2012-05-15

Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

KAUST Repository

Ding, Junfeng

2016-05-04

Emerging physical phenomena at the unit-cell-controlled interfaces of transition-metal oxides have attracted lots of interest because of the rich physics and application opportunities. This work reports a reentrant spin glass behavior with strong magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a Curie temperature of 246 K is observed in the superlattice with six-unit-cell LSMO layers, while the reference LSMO film with the same thickness shows much weaker magnetism. Furthermore, an insulator-metal transition emerges at the Curie temperature, and below the freezing temperature the superlattices can be considered as a glassy ferromagnetic insulator. These experimental results are closely related to the interfacial spin reconstruction revealed by the first-principles calculations, and the dependence of the reentrant spin glass behavior on the LSMO layer thickness is in line with the general phase diagram of a spin system derived from the infinite-range SK model. The results of this work underscore the manganite/cuprate superlattices as a versatile platform of creating artificial materials with tailored interfacial spin coupling and physical properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

International Nuclear Information System (INIS)

Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

2007-01-01

Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

AlGaAs/InGaAs/AlGaAs double pulse doped pseudomorphic high electron mobility transistor structures on InGaAs substrates

Science.gov (United States)

Hoke, W. E.; Lyman, P. S.; Mosca, J. J.; McTaggart, R. A.; Lemonias, P. J.; Beaudoin, R. M.; Torabi, A.; Bonner, W. A.; Lent, B.; Chou, L.-J.; Hsieh, K. C.

1997-10-01

Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1-xAs (x=0.025-0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was used for improved resistivity and breakdown. Excellent electrical and optical properties were obtained for 110-Å-thick InGaAs channel layers with indium concentrations up to 31%. A room temperature mobility of 6860 cm2/V s with 77 K sheet density of 4.0×1012cm-2 was achieved. The InGaAs channel photoluminescence intensity was equivalent to an analogous structure on a GaAs substrate. To reduce strain PHEMT structures with a composite InGaP/AlGaAs Schottky layer were also grown. The structures also exhibited excellent electrical and optical properties. Transmission electron micrographs showed planar channel interfaces for highly strained In0.30Ga0.70As channel layers.

Energy minibands degeneration induced by magnetic field effects in graphene superlattices

Science.gov (United States)

Reyes-Villagrana, R. A.; Carrera-Escobedo, V. H.; Suárez-López, J. R.; Madrigal-Melchor, J.; Rodríguez-Vargas, I.

2017-12-01

Energy minibands are a basic feature of practically any superlattice. In this regard graphene superlattices are not the exception and recently miniband transport has been reported through magneto-transport measurements. In this work, we compute the energy miniband and transport characteristics for graphene superlattices in which the energy barriers are generated by magnetic and electric fields. The transfer matrix approach and the Landauer-Büttiker formalism have been implemented to calculate the energy minibands and the linear-regime conductance. We find that energy minibands are very sensitive to the magnetic field and become degenerate by rising it. We were also able to correlate the evolution of the energy minibands as a function of the magnetic field with the transport characteristics, finding that miniband transport can be destroyed by magnetic field effects. Here, it is important to remark that although magnetic field effects have been a key element to unveil miniband transport, they can also destroy it.

Porous Hollow Superlattice NiMn2O4/NiCo2O4 Mesocrystals as a Highly Reversible Anode Material for Lithium-Ion Batteries

Directory of Open Access Journals (Sweden)

Lingjun Li

2018-05-01

Full Text Available As a promising high-capacity anode material for Li-ion batteries, NiMn2O4 always suffers from the poor intrinsic conductivity and the architectural collapse originating from the volume expansion during cycle. Herein, a combined structure and architecture modulation is proposed to tackle concurrently the two handicaps, via a facile and well-controlled solvothermal approach to synthesize NiMn2O4/NiCo2O4 mesocrystals with superlattice structure and hollow multi-porous architecture. It is demonstrated that the obtained NiCo1.5Mn0.5O4 sample is made up of a new mixed-phase NiMn2O4/NiCo2O4 compound system, with a high charge capacity of 532.2 mAh g−1 with 90.4% capacity retention after 100 cycles at a current density of 1 A g−1. The enhanced electrochemical performance can be attributed to the synergistic effects of the superlattice structure and the hollow multi-porous architecture of the NiMn2O4/NiCo2O4 compound. The superlattice structure can improve ionic conductivity to enhance charge transport kinetics of the bulk material, while the hollow multi-porous architecture can provide enough void spaces to alleviate the architectural change during cycling, and shorten the lithium ions diffusion and electron-transportation distances.

THz laser based on quasi-periodic AlGaAs superlattices

Energy Technology Data Exchange (ETDEWEB)

Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

2013-06-30

The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

Response functions of a superlattice with a basis: A model for oxide superconductors

International Nuclear Information System (INIS)

Griffin, A.

1988-01-01

The new high-T/sub c/ oxide superconductors appear to be superlattice structures with a basis composed of metallic sheets as well as metallic chains. Using a simple free-electron-gas model for the sheets and chains, we obtain the dielectric function ε(q,ω) of such a multilayer system within the random-phase approximation (RPA). We give results valid for arbitrary wave vector q appropriate to sheets and chains (as in the orthorhombic phase of Y-Ba-Cu-O) as well as for two different kinds of sheets (such as may be present in the Bi-Ca-Sr-Cu-O superconductors). The occurrence of acoustic plasmons is a general phenomenon in such superlattices, as shown by an alternative formulation based on the exact response functions for the individual sheets and chains, in which only the interchain (sheet) Coulomb interaction is treated in the RPA. These results generalize the long-wavelength expressions recently given in the literature. We also briefly discuss the analogous results for two arrays of mutually perpendicular chains, such as found in Hg chain compounds

Infrared spectroscopy of an epitaxial BaTiO.sub.3./sub./SrTiO.sub.3./sub. superlattice grown on a (110) SmScO.sub.3./sub. substrate

Czech Academy of Sciences Publication Activity Database

Železný, Vladimír; Soukiassian, A.; Schlom, D. G.; Xi, X.X.

2014-01-01

Roč. 115, č. 18 (2014), "184102-1"-"184102-7" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP204/11/1011 Institutional support: RVO:68378271 Keywords : perovskites * superlattices Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

International Nuclear Information System (INIS)

Bouchard, A.M.

1994-01-01

This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

Strain-tunable half-metallicity in hybrid graphene-hBN monolayer superlattices

International Nuclear Information System (INIS)

Meng, Fanchao; Zhang, Shiqi; Lee, In-Ho; Jun, Sukky; Ciobanu, Cristian V.

2016-01-01

Highlights: • Armchair superlattices have a bandgap modulated by the deformed domain widths. • Strain and domain width lead to novel spin-dependent behavior for zigzag boundaries. • Limits for spin-dependent bandgap and half-metallic behavior have been charted. - Abstract: As research in 2-D materials evolves toward combinations of different materials, interesting electronic and spintronic properties are revealed and may be exploited in future devices. A way to combine materials is the formation of spatially periodic domain boundaries in an atom-thick monolayer: as shown in recent reports, when these domains are made of graphene and hexagonal boron nitride, the resulting superlattice has half-metallic properties in which one spin component is (semi)metallic and the other is semiconductor. We explore here the range of spin-dependent electronic properties that such superlattices can develop for different type of domain boundaries, domain widths, and values of tensile strain applied to the monolayer. We show evidence of an interplay between strain and domain width in determining the electronic properties: while for armchair boundaries the bandgap is the same for both spin components, superlattices with zigzag boundaries exhibit rich spin-dependent behavior, including different bandgaps for each spin component, half-metallicity, and reversal of half-metallicity. These findings can lead to new ways of controlling the spintronic properties in hybrid-domain monolayers, which may be exploited in devices based on 2-D materials.

InAs/GaSb type-II superlattice infrared detectors: three decades of development

Science.gov (United States)

Rogalski, A.; Kopytko, M.; Martyniuk, P.

2017-02-01

Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

Phase coexistence and electric-field control of toroidal order in oxide superlattices.

Science.gov (United States)

Damodaran, A R; Clarkson, J D; Hong, Z; Liu, H; Yadav, A K; Nelson, C T; Hsu, S-L; McCarter, M R; Park, K-D; Kravtsov, V; Farhan, A; Dong, Y; Cai, Z; Zhou, H; Aguado-Puente, P; García-Fernández, P; Íñiguez, J; Junquera, J; Scholl, A; Raschke, M B; Chen, L-Q; Fong, D D; Ramesh, R; Martin, L W

2017-10-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Our findings suggest new cross-coupled functionalities.

Phase coexistence and electric-field control of toroidal order in oxide superlattices

International Nuclear Information System (INIS)

Damodaran, A. R.; Clarkson, J. D.; Hong, Z.

2017-01-01

Systems that exhibit phase competition, order parameter coexistence, and emergent order parameter topologies constitute a major part of modern condensed-matter physics. Here, by applying a range of characterization techniques, and simulations, we observe that in PbTiO 3 /SrTiO 3 superlattices all of these effects can be found. By exploring superlattice period-, temperature- and field-dependent evolution of these structures, we observe several new features. First, it is possible to engineer phase coexistence mediated by a first-order phase transition between an emergent, low-temperature vortex phase with electric toroidal order and a high-temperature ferroelectric a 1 /a 2 phase. At room temperature, the coexisting vortex and ferroelectric phases form a mesoscale, fibre-textured hierarchical superstructure. The vortex phase possesses an axial polarization, set by the net polarization of the surrounding ferroelectric domains, such that it possesses a multi-order-parameter state and belongs to a class of gyrotropic electrotoroidal compounds. Finally, application of electric fields to this mixed-phase system permits interconversion between the vortex and the ferroelectric phases concomitant with order-of-magnitude changes in piezoelectric and nonlinear optical responses. Here, our findings suggest new cross-coupled functionalities.

Superconductivity in La1.56Sr0.44CuO4/La2CuO4 Superlattices

International Nuclear Information System (INIS)

Bozovic, I.; Suter, A.; Morenzoni, E.; Prokscha, T.; Luetkens, H.; Wojek, B.M.; Logvenov, G.; Gozar, A.

2011-01-01

Superlattices of the repeated structure La 1.56 Sr 0.44 CuO 4 /La 2 CuO 4 (LSCO-LCO), where none of the constituents is superconducting, show a superconducting transition of T(prime) c 25 K. In order to elucidate the nature of the superconducting state we have performed a low-energy μSR study. By applying a magnetic field parallel (Meissner state) and perpendicular (vortex state) to the film planes, we could show that superconductivity is sheet like, resulting in a very anisotropic superconducting state. This result is consistent with a simple charge-transfer model, which takes into account the layered structure and the difference in the chemical potential between LCO and LSCO, as well as Sr interdiffusion. Using a pancake-vortex model we could estimate a strict upper limit of the London penetration depth to 380 nm in these superlattices. The temperature dependence of the muon depolarization rate in field cooling experiments is very similar to what is observed in intercalated BSCCO and suggests that vortex-vortex interaction is dominated by electromagnetic coupling but negligible Josephson interaction.

InGaAs/InAlAs superlattice detector for THz radiation

CERN Document Server

Schomburg, E; Kratschmer, M; Vollnhals, A; Scheuerer, R; Renk, K F; Ustinov, V; Zhukov, A; Kovsh, A

2002-01-01

We report the use of an InGaAs/InAlAs superlattice for detection of THz radiation pulses generated by a free-electron-laser (FELIX). The detector showed a response corresponding to a reduction of the direct current through the superlattice. The current reduction is attributed to the THz-field induced modulation of Bloch oscillations performed by miniband electrons. The detector response was measured in a frequency range between 4 and 12 THz and showed strong minima at the frequencies of infrared active transverse optic phonons. (10 refs).

Ab Initio factorized LCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe)1(ZnS)1 strained-layer superlattice

International Nuclear Information System (INIS)

Marshall, T.S.; Wilson, T.M.

1992-01-01

The authors report on the results of electronic band structure calculations of bulk ZnSe, bulk ZnS and the (ZnSe) 1 (ZnS) 1 , strained-layer superlattice (SLS) using the ab initio factorized linear combination of atomic orbitals method. The bulk calculations were done using the standard primitive nonrectangular 2-atom zinc blende unit cell, while the SLS calculation was done using a primitive tetragonal 4-atom unit cell modeled from the CuAu I structure. The analytic fit to the SLS crystalline potential was determined by using the nonlinear coefficients from the bulk fits. The CPU time saved by factorizing the energy matrix integrals and using a rectangular unit cell is discussed

) m /SrVO3 ( m = 5, 6) Superlattices

KAUST Repository

Dai, Qingqing

2018-05-04

The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states for both superlattices are found due to epitaxial strain. At the interfaces, however, the V spins couple antiferromagnetically for m = 5 and ferromagnetically for m = 6 (m‐dependence of the magnetization). Electronic reconstruction in form of charge ordering is predicted to occur with V3+ and V4+ states arranged in a checkerboard pattern on both sides of the SrO layer. As compared to bulk LaVO3, the presence of V4+ ions introduces in‐gap states that strongly reduce the bandgap and influence the orbital occupation and ordering.

Sequential magnetic switching in Fe/MgO(001) superlattices

Science.gov (United States)

Magnus, F.; Warnatz, T.; Palsson, G. K.; Devishvili, A.; Ukleev, V.; Palisaitis, J.; Persson, P. O. Å.; Hjörvarsson, B.

2018-05-01

Polarized neutron reflectometry is used to determine the sequence of magnetic switching in interlayer exchange coupled Fe/MgO(001) superlattices in an applied magnetic field. For 19.6 Å thick MgO layers we obtain a 90∘ periodic magnetic alignment between adjacent Fe layers at remanence. In an increasing applied field the top layer switches first followed by its second-nearest neighbor. For 16.4 Å MgO layers, a 180∘ periodic alignment is obtained at remanence and with increasing applied field the layer switching starts from the two outermost layers and proceeds inwards. This sequential tuneable switching opens up the possibility of designing three-dimensional magnetic structures with a predefined discrete switching sequence.

Development of Strained-Layer Superlattice (SLS) IR Detector Camera

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

Science.gov (United States)

Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

2018-01-01

The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

Simultaneous microwave photonic and phononic band gaps in piezoelectric–piezomagnetic superlattices with three types of domains in a unit cell

Energy Technology Data Exchange (ETDEWEB)

Tang, Zheng-hua [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China); Jiang, Zheng-Sheng [National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China); Chen, Tao [Laboratory of Quantum Information and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006 (China); Lei, Da-Jun [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China); Yan, Wen-Yan, E-mail: yanwenyan88@126.com [School of Software and Communication Engineering, Xiangnan University, Chenzhou 423000 (China); Qiu, Feng; Huang, Jian-Quan; Deng, Hai-Ming; Yao, Min [Xiangnan University-Gospell Joint Laboratory of Microwave Communication Technology, Xiangnan University, Chenzhou 423000 (China)

2016-04-29

A novel phoxonic crystal using the piezoelectric (PMN-PT) and piezomagnetic (CoFe{sub 2}O{sub 4}) superlattices with three types of domains in a unit cell (PPSUC) is present, in which dual microwave photonic and phononic band gaps can be obtained simultaneously. Two categories of phononic band gaps, originating from both the Bragg scattering of acoustic waves in periodic structures at the Brillouin zone boundary and the electromagnetic wave-lattice vibration couplings near the Brillouin zone center, can be observed in the phononic band structures. The general characteristics of the microwave photonic band structures are similar to those of pure piezoelectric or piezomagnetic superlattices, with the major discrepancy being the appearance of nearly dispersionless branches within the microwave photonic band gaps, which show an extremely large group velocity delay. Thus, the properties may also be applied to compact acoustic-microwave devices. - Highlights: • Dual microwave photonic and phononic band gaps can coexist in the PPSUC. • Two categories of phononic band gaps with different mechanism can be obtained. • Nearly dispersionless branches appear in the microwave photonic band gaps.

Lateral surface superlattices in strained InGaAs layers

International Nuclear Information System (INIS)

Milton, B.

2000-08-01

Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

Superconducting properties and microstructure of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

International Nuclear Information System (INIS)

Lowndes, D.H.; Norton, D.P.; Zheng, X.Y.; Zhu, Shen

1991-10-01

Epitaxial YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ (YBCO/PBCO) superlattices are tools for systematic, fundamental studies of high-temperature superconductivity. The variation of T c in YBCO/PBCO superlattices can be understood as arising from changes in the interlayer phase coupling between YBCO layers that are highly two-dimensional when they are very thin (∼1--2 c-axis unit cells) and completely isolated from each other. Single-cell-thick YBCO layers, containing isolated pairs of CuO 2 planes, are found to be superconducting at T c ∼ 20 K, in a PBCO matrix. The resistance in the superconducting transition region scales with temperature as expected for the (flux flow) resistance produced by thermally generated 2D vortices, or for a 2D array of superconducting weak links. Relative to both thin-film and single-crystal HTSc specimens, the thin superconducting layers in YBCO/PBCO superlattices exhibit a greatly expanded temperature range over which characteristic 2D dissipation can be observed, as a consequence of the enhanced anisotropy and reduced dimensionality of the YBCO layers. Scanning tunneling microscope studies reveal that YBCO films and YBCO/PBCO superlattices grow unit cell-by-unit cell by a terraced-island growth mechanism. On miscut, near-(001) substrates the terraces are epitaxially aligned with the substrate crystal lattice and spiral growth structures (screw dislocation-mediated growth) are not seen. These observations explain the steps or ''kinks'' that are seen in cross-section Z-contrast TEM images of YBCO/PBCO superlattices. The kinks may correspond physically to regions where the supercurrent must tunnel along the c- axis, and thus may be weak-link barriers. 31 refs., 7 figs

Surface magnetic phase transitions in Dy/Lu superlattices

International Nuclear Information System (INIS)

Goff, J.P.; Sarthour, R.S.; Micheletti, C.; Langridge, S.; Wilkins, C.J.T.; Ward, R.C.C.; Wells, M.R.

1999-01-01

Dy/Lu superlattices comprising ferromagnetic Dy blocks coupled antiferromagnetically across the Lu blocks may be modelled as a chain of XY spins with antiferromagnetic exchange and six-fold anisotropy. We have calculated the stable magnetic phases for the cases of large anisotropy and a field applied along an easy direction. For an infinite chain an intermediate phase (1, 5,...) is predicted, where the notation gives the angle between the moment and the applied field in units of π/3. Furthermore, the effects of surface reconstruction are determined for finite chains. A [Dy 20 Lu 12 ] 20 superlattice has been studied using bulk magnetization and polarized neutron reflectivity. The (1, 5,...) phase has been identified and the results provide direct evidence in support of the theoretical predictions. Dipolar forces are shown to account for the magnitude of the observed exchange coupling. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

Inclined inheritance of interface roughness in semiconductor superlattices as characterized by x-ray reciprocal space mapping

International Nuclear Information System (INIS)

Schmidbauer, M.; Opitz, R.; Wiebach, Th.; Koehler, R.

2001-01-01

The inclined inheritance of interface roughness is investigated for an AlASGaAs superlattice grown by molecular beam epitaxy on a vicinal (001) GaAs substrate. As a consequence of vertical correlation of the roughness of subsequent interfaces the diffusely scattered x-ray intensity is bunched into resonant diffuse scattering (RDS) sheets in reciprocal space. Inclined inheritance leads to corresponding shearing of the RDS sheets. A simple model for the evaluation of inclined roughness inheritance in three dimensions is presented, where the sheared RDS sheets are modeled by anisotropic sheared ellipsoids. From measurements at different azimuthal sample orientations the two angles characterizing the inclined inheritance of interface roughness can be determined accurately. At the present sample the inheritance of interface roughness approximately follows the direction of step flow during growth. The results show that a three-dimensional analysis of diffuse scattering is necessary for a correct evaluation and interpretation

Intrinsic to extrinsic phonon lifetime transition in a GaAs–AlAs superlattice

International Nuclear Information System (INIS)

Hofmann, F; Garg, J; Chen, G; Maznev, A A; Nelson, K A; Jandl, A; Bulsara, M; Fitzgerald, E A

2013-01-01

We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon–phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the ‘interfacial atomic disorder’ model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness. (paper)

Intrinsic to extrinsic phonon lifetime transition in a GaAs-AlAs superlattice.

Science.gov (United States)

Hofmann, F; Garg, J; Maznev, A A; Jandl, A; Bulsara, M; Fitzgerald, E A; Chen, G; Nelson, K A

2013-07-24

We have measured the lifetimes of two zone-center longitudinal acoustic phonon modes, at 320 and 640 GHz, in a 14 nm GaAs/2 nm AlAs superlattice structure. By comparing measurements at 296 and 79 K we separate the intrinsic contribution to phonon lifetime determined by phonon-phonon scattering from the extrinsic contribution due to defects and interface roughness. At 296 K, the 320 GHz phonon lifetime has approximately equal contributions from intrinsic and extrinsic scattering, whilst at 640 GHz it is dominated by extrinsic effects. These measurements are compared with intrinsic and extrinsic scattering rates in the superlattice obtained from first-principles lattice dynamics calculations. The calculated room-temperature intrinsic lifetime of longitudinal phonons at 320 GHz is in agreement with the experimentally measured value of 0.9 ns. The model correctly predicts the transition from predominantly intrinsic to predominantly extrinsic scattering; however the predicted transition occurs at higher frequencies. Our analysis indicates that the 'interfacial atomic disorder' model is not entirely adequate and that the observed frequency dependence of the extrinsic scattering rate is likely to be determined by a finite correlation length of interface roughness.

The electronic states calculated using the sinusoidal potential for Cd1-xZnxS quantum dot superlattices

International Nuclear Information System (INIS)

Sakly, A.; Safta, N.; Mejri, H.; Lamine, A. Ben

2011-01-01

Research highlights: → This paper is dedicated to structures based on Cd 1-x Zn x S. - Abstract: The present work reports on a theoretical investigation of superlattices based on Cd 1-x Zn x S quantum dots embedded in an insulating material. The system to model is assumed to be a series of flattened cylindrical quantum dots with a finite barrier at the boundary and is studied using a sinusoidal potential. The electronic states of both Γ 1 - (ground) and Γ 2 - (first excited) minibands have been computed as a function of inter-quantum dot separation and Zn composition. An analysis of the results shows that the widths of Γ 1 - and Γ 2 - minibands decrease as the superlattice period and Zn content increase separately. Moreover, the sinusoidal shape of the confining potential accounts for the coupling between quantum dots quantitatively less than the Kronig-Penney potential model.

Synergy of atom-probe structural data and quantum-mechanical calculations in a theory-guided design of extreme-stiffness superlattices containing metastable phases

Czech Academy of Sciences Publication Activity Database

Friák, Martin; Tytko, D.; Holec, D.; Choi, P.P.; Eisenlohr, P.; Raabe, D.; Neugebauer, J.

2015-01-01

Roč. 17, č. 9 (2015), Art . n. 093004 ISSN 1367-2630 Institutional support: RVO:68081723 Keywords : ab initio * composites * elasticity * nitrides * superlattices * Young's modulus Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015

Effect of anisotropy on the magnon energy gap in a two-layer ferromagnetic superlattice

International Nuclear Information System (INIS)

Qiu Rongke; Liang Jing; Li Qingfeng; Zhang Zhidong; Song Panpan; Hong Xiaomin

2009-01-01

The magnon energy bands or spectra in a two-layer ferromagnetic superlattice are studied. It is found that a modulated energy gap exists in the magnon energy band along K x direction perpendicular to the superlattice plane, which is different from the optical magnon gap at K x =0. The anisotropy, the spin quantum numbers and the interlayer exchange couplings all affect the magnon energy gap. If the anisotropy exists, there will be no acoustic energy branch in the system. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gap. The competition achieves a balance at the zero energy gap, at which the symmetry of the system is higher. The two energy spectra of the two-layer ferromagnetic superlattice are lowered with increasing temperature.

Quenched Magnon excitations by oxygen sublattice reconstruction in (SrCuO 2) n /(SrTiO 3) 2 superlattices

NARCIS (Netherlands)

Dantz, M.; Pelliciari, J.; Samal, D.; Bisogni, V.; Huang, Y.; Olalde-Velasco, P.; Strocov, V. N.; Koster, G.; Schmitt, T.

2016-01-01

The recently discovered structural reconstruction in the cuprate superlattice (SrCuO 2) n /(SrTiO 3) 2 has been investigated across the critical value of n = 5 using resonant inelastic x-ray scattering (RIXS). We find that at the critical value of n, the cuprate layer remains largely in the

Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers

Directory of Open Access Journals (Sweden)

Aeberhard Urs

2011-01-01

Full Text Available Abstract Si-SiOx superlattices are among the candidates that have been proposed as high band gap absorber material in all-Si tandem solar cell devices. Owing to the large potential barriers for photoexited charge carriers, transport in these devices is restricted to quantum-confined superlattice states. As a consequence of the finite number of wells and large built-in fields, the electronic spectrum can deviate considerably from the minibands of a regular superlattice. In this article, a quantum-kinetic theory based on the non-equilibrium Green's function formalism for an effective mass Hamiltonian is used for investigating photogeneration and transport in such devices for arbitrary geometry and operating conditions. By including the coupling of electrons to both photons and phonons, the theory is able to provide a microscopic picture of indirect generation, carrier relaxation, and inter-well transport mechanisms beyond the ballistic regime.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

International Nuclear Information System (INIS)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-01-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Interface magnetism of iron grown on sulfur and hydrogen passivated GaAs(001)

Energy Technology Data Exchange (ETDEWEB)

Kardasz, B.; Watkins, S. P.; Montoya, E. A.; Burrowes, C.; Girt, E.; Heinrich, B.

2012-04-01

Sulfur (S) and hydrogen (H) atom passivated GaAs(001) templates were used for deposition of ultrathin crystalline Fe films using molecular beam epitaxy, where the Fe thickness ranged from 10 to 45 atomic layers. Reflection high-energy electron diffraction patterns showed that the S- and H-passivated surfaces had no and very weak (1 x 2) superlattice reconstructions, respectively. This indicates that these GaAs(001) templates have a square-like symmetry. Magnetic anisotropies were investigated using the in-plane angular dependence of ferromagnetic resonance at 36 GHz. The in-plane cubic and uniaxial anisotropies and perpendicular uniaxial field were described by bulk and interface contributions, indicating that the Fe films have a high lattice coherence. The magnetic properties of the Fe films were compared to those grown on more commonly used GaAs(001) templates having a (4 x 6) reconstruction with an As-rich in-plane uniaxial symmetry. The Fe films grown on S-passivated templates exhibited unique magnetic properties caused by a decreased lattice spacing compared to the bulk Fe.

Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

DEFF Research Database (Denmark)

Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

2010-01-01

This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

) m /SrVO3 ( m = 5, 6) Superlattices

KAUST Repository

Dai, Qingqing; Lü ders, Ulrike; Fré sard, Raymond; Eckern, Ulrich; Schwingenschlö gl, Udo

2018-01-01

The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states

Quantum ratchets for quantum communication with optical superlattices

International Nuclear Information System (INIS)

Romero-Isart, Oriol; Garcia-Ripoll, Juan Jose

2007-01-01

We propose to use a quantum ratchet to transport quantum information in a chain of atoms trapped in an optical superlattice. The quantum ratchet is created by a continuous modulation of the optical superlattice which is periodic in time and in space. Though there is zero average force acting on the atoms, we show that indeed the ratchet effect permits atoms on even and odd sites to move along opposite directions. By loading the optical lattice with two-level bosonic atoms, this scheme permits us to perfectly transport a qubit or entangled state imprinted in one or more atoms to any desired position in the lattice. From the quantum computation point of view, the transport is achieved by a smooth concatenation of perfect swap gates. We analyze setups with noninteracting and interacting particles and in the latter case we use the tools of optimal control to design optimal modulations. We also discuss the feasibility of this method in current experiments

Real structure of LaGaO3 monocrystals grown by Czochralski method

International Nuclear Information System (INIS)

Morozov, A.N.; Morozova, O.Yu.; Ponomarev, N.M.

1993-01-01

A complex X-ray diffraction study of lanthanum (ortho)gallate crystal structure and structural defects in LaGaO 3 crystals grown by the Czochralski method is carried out. Coordinates of atoms in LaGaO 3 unit cell are determined. X-Ray topographic studies of oriented LaGaO 3 sublayers for high-tc superconductor film growth are optimized. The substructure of monocrystals is studied

Effect of 3C-SiC intermediate layer in GaN—based light emitting diodes grown on Si(111) substrate

Science.gov (United States)

Zhu, Youhua; Wang, Meiyu; Li, Yi; Tan, Shuxin; Deng, Honghai; Guo, Xinglong; Yin, Haihong; Egawa, Takashi

2017-03-01

GaN-based light emitting diodes (LEDs) have been grown by metalorganic chemical vapor deposition on Si(111) substrate with and without 3C-SiC intermediate layer (IL). Structural property has been characterized by means of atomic force microscope, X-ray diffraction, and transmission electron microscope measurements. It has been revealed that a significant improvement in crystalline quality of GaN and superlattice epitaxial layers can be achieved by using 3C-SiC as IL. Regarding of electrical and optical characteristics, it is clearly observed that the LEDs with its IL have a smaller leakage current and higher light output power comparing with the LEDs without IL. The better performance of LEDs using 3C-SiC IL can be contributed to both of the improvements in epitaxial layers quality and light extraction efficiency. As a consequence, in terms of optical property, a double enhancement of the light output power and external quantum efficiency has been realized.

Excitation on breather (bion) in superlattice

International Nuclear Information System (INIS)

Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.

1999-09-01

Soliton breather excitation in superlattice has been studied in this paper. It is observed that under certain conditions, the vector potential equation for the electromagnetic wave propagating through the superlattice assumes the sine-Gordon(sG) equation. The solution of which does not give only a soliton but also a soliton breather. The binding energy of the breather is calculated to be E b = 16γ(1 - sin ν), γ = (1 - u 2 /v 0 2 ) -1/2 where u is the velocity of the breather and v 0 is the velocity of the electromagnetic wave in the absence of electrons. As can be seen, when ν → π/2 the binding energy tends to zero, hence, the breather disintegrates into a soliton and antisoliton. It was further observed that the binding energy decreases with an increase in Δ (the half miniband width) for a given value of d (SL period). Similarly it also decreases with increase in d for a given value of Δ. Comparing the breather's rest energy E b to that of soliton E s i.e E b = 2E s sin ν. We noted that the breather's rest energy is less than that required to excite a soliton. (author)

Mg dopant distribution in an AlGaN/GaN p-type superlattice assessed using atom probe tomography, TEM and SIMS

International Nuclear Information System (INIS)

Bennett, S E; Kappers, M J; Barnard, J S; Humphreys, C J; Oliver, R A; Clifton, P H; Ulfig, R M

2010-01-01

P-type conducting layers are critical in GaN-based devices such as LEDs and laser diodes. Such layers are often produced by doping GaN with Mg, but the hole concentration can be enhanced using AlGaN/GaN p-type superlattices by exploiting the built-in polarisation fields. A Mg-doped AlGaN/GaN superlattice was studied using SIMS. Although the AlGaN and GaN were nominally doped to the same level, the SIMS data suggested a difference in doping density between the two materials. Atom probe tomography was then used to investigate the Mg distribution. The superlattice repeats were clearly visible, as expected and, in addition, significant Mg clustering was observed in both the GaN and AlGaN layers. There were many more Mg clusters in the AlGaN layers than the GaN layers, accounting for the difference in doping density suggested by SIMS. To evaluate the structural accuracy of the atom probe reconstruction, layer thicknesses from the atom probe were compared with STEM images. Finally, future work is proposed to investigate the Mg clusters in the TEM.

Control of phonon transport by the formation of the Al2O3 interlayer in Al2O3-ZnO superlattice thin films and their in-plane thermoelectric energy generator performance.

Science.gov (United States)

Park, No-Won; Ahn, Jay-Young; Park, Tae-Hyun; Lee, Jung-Hun; Lee, Won-Yong; Cho, Kwanghee; Yoon, Young-Gui; Choi, Chel-Jong; Park, Jin-Seong; Lee, Sang-Kwon

2017-06-01

Recently, significant progress has been made in increasing the figure-of-merit (ZT) of various nanostructured materials, including thin-film and quantum dot superlattice structures. Studies have focused on the size reduction and control of the surface or interface of nanostructured materials since these approaches enhance the thermopower and phonon scattering in quantum and superlattice structures. Currently, bismuth-tellurium-based semiconductor materials are widely employed for thermoelectric (TE) devices such as TE energy generators and coolers, in addition to other sensors, for use at temperatures under 400 K. However, new and promising TE materials with enhanced TE performance, including doped zinc oxide (ZnO) multilayer or superlattice thin films, are also required for designing solid-state TE power generating devices with the maximum output power density and for investigating the physics of in-plane TE generators. Herein, we report the growth of Al 2 O 3 /ZnO (AO/ZnO) superlattice thin films, which were prepared by atomic layer deposition (ALD), and the evaluation of their electrical and TE properties. All the in-plane TE properties, including the Seebeck coefficient (S), electrical conductivity (σ), and thermal conductivity (κ), of the AO/ZnO superlattice (with a 0.82 nm-thick AO layer) and AO/ZnO films (with a 0.13 nm-thick AO layer) were evaluated in the temperature range 40-300 K, and the measured S, σ, and κ were -62.4 and -17.5 μV K -1 , 113 and 847 (Ω cm) -1 , and 0.96 and 1.04 W m -1 K -1 , respectively, at 300 K. Consequently, the in-plane TE ZT factor of AO/ZnO superlattice films was found to be ∼0.014, which is approximately two times more than that of AO/ZnO films (ZT of ∼0.007) at 300 K. Furthermore, the electrical power generation efficiency of the TE energy generator consisting of four couples of n-AO/ZnO superlattice films and p-Bi 0.5 Sb 1.5 Te 3 (p-BST) thin-film legs on the substrate was demonstrated. Surprisingly, the output

Development of Strained-Layer Superlattice (SLS) IR Detector Camera Project

Data.gov (United States)

National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

Ultrafast carrier dynamics in a GaN/Al 0.18Ga0.82N superlattice

Science.gov (United States)

Mahler, Felix; Tomm, Jens W.; Reimann, Klaus; Woerner, Michael; Elsaesser, Thomas; Flytzanis, Christos; Hoffmann, Veit; Weyers, Markus

2018-04-01

Relaxation processes of photoexcited carriers in a GaN /Al0.18Ga0.82N superlattice are studied in femtosecond spectrally resolved reflectivity measurements at ambient temperature. The transient reflectivity reveals electron trapping into defect states close to the conduction-band minimum with a 150-200 fs time constant, followed by few-picosecond carrier cooling. A second slower trapping process into a different manifold of defect states is observed on a time scale of approximately 10 ps. Our results establish the prominent role of structural defects and disorder for ultrafast carrier dynamics in nitride semiconductor structures.

DNA-nanoparticle superlattices formed from anisotropic building blocks

Science.gov (United States)

Jones, Matthew R.; Macfarlane, Robert J.; Lee, Byeongdu; Zhang, Jian; Young, Kaylie L.; Senesi, Andrew J.; Mirkin, Chad A.

2010-11-01

Directional bonding interactions in solid-state atomic lattices dictate the unique symmetries of atomic crystals, resulting in a diverse and complex assortment of three-dimensional structures that exhibit a wide variety of material properties. Methods to create analogous nanoparticle superlattices are beginning to be realized, but the concept of anisotropy is still largely underdeveloped in most particle assembly schemes. Some examples provide interesting methods to take advantage of anisotropic effects, but most are able to make only small clusters or lattices that are limited in crystallinity and especially in lattice parameter programmability. Anisotropic nanoparticles can be used to impart directional bonding interactions on the nanoscale, both through face-selective functionalization of the particle with recognition elements to introduce the concept of valency, and through anisotropic interactions resulting from particle shape. In this work, we examine the concept of inherent shape-directed crystallization in the context of DNA-mediated nanoparticle assembly. Importantly, we show how the anisotropy of these particles can be used to synthesize one-, two- and three-dimensional structures that cannot be made through the assembly of spherical particles.

Superlattice electroabsorption radiation detector

International Nuclear Information System (INIS)

Cooke, B.J.

1993-06-01

This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

Hot electrons in superlattices: quantum transport versus Boltzmann equation

DEFF Research Database (Denmark)

Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.

1999-01-01

A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...

Quantum Transport: The Link between Standard Approaches in Superlattices

DEFF Research Database (Denmark)

Wacker, Andreas; Jauho, Antti-Pekka

1998-01-01

Theories describing electrical transport in semiconductor superlattices can essentially be divided in three disjoint categories: (i) transport in a miniband; (ii) hopping between Wannier-Stark ladders; and (iii) sequential tunneling. We present a quantum transport model, based on nonequilibrium G...

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

Science.gov (United States)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Electron drag by solitons in superlattices in an external magnetic field

International Nuclear Information System (INIS)

Vyazovskii, M.V.; Syrodoev, G.A.

1996-01-01

The soliton-electric effect accompanying the propagation of an electromagnetic soliton along an axis of a superlattice in an external magnetic field directed along the magnetic field of the soliton is studied. It is assumed that the duration γ-1 of the soliton pulse is much shorter than the free flight time of an electron. It is shown that in the absence of a constant magnetic field the drag current varies as sin(αsech2γt) (α is a constant determined by the parameters of the superlattice). In the presence of a constant magnetic field of intensity H0>>Hs, where Hs is the amplitude of the soliton field, the drag current oscillates

Analysis of polariton dispersion in metal nanocomposite based novel superlattice system

Science.gov (United States)

DoniPon, V.; Joseph Wilson, K. S.; Malarkodi, A.

2018-06-01

The influence of metal nanoparticles in tuning the polaritonic gap in a novel piezoelectric superlattice is studied. Dielectric function of the metal nanoparticles is analyzed using Kawabata-Kubo effect and Drude's theory. The effective dielectric function of the nanocomposite system is studied using Maxwell Garnett approximation. Nanocomposite based LiTaO3 novel superlattice is formed by arranging the nanocomposite systems in such a way that their orientations are in the opposite direction. Hence there are two additional modes of propagation. The top most modes reflect the metal behavior of the nanoparticles. It is found that these modes of propagation vary with the filling factor. These additional modes of propagations can be exploited in the field of communication.

Direct observation of two-step crystallization in nanoparticle superlattice formation

Energy Technology Data Exchange (ETDEWEB)

Park, Jungwon; Zheng, Haimei; Lee, Won Chul; Geissler, Phillip L.; Rabani, Eran; Alivisatos, A. Paul

2011-10-06

Direct imaging of nanoparticle solutions by liquid phase transmission electron microscopy has enabled unique in-situ studies of nanoparticle motion and growth. In the present work, we report on real-time formation of two-dimensional nanoparticle arrays in the very low diffusive limit, where nanoparticles are mainly driven by capillary forces and solvent fluctuations. We find that superlattice formation appears to be segregated into multiple regimes. Initially, the solvent front drags the nanoparticles, condensing them into an amorphous agglomerate. Subsequently, the nanoparticle crystallization into an array is driven by local fluctuations. Following the crystallization event, superlattice growth can also occur via the addition of individual nanoparticles drawn from outlying regions by different solvent fronts. The dragging mechanism is consistent with simulations based on a coarse-grained lattice gas model at the same limit.

Effect of retardation on the reflectance properties of the metallic Fibonacci quasi-superlattice

International Nuclear Information System (INIS)

Feng Weiguo; Yao Hesheng; Xu Xiang

1989-12-01

Based on the hydrodynamic model theory and the transfer matrix method, we have re-examined the reflection properties by taking account of the retardation effect to the system of the metallic Fibonacci quasi-superlattice. For the normal incident S-polarized Soft X-rays and extreme ultraviolet, we find that the self-similar reflecting spectrum will be restrained with the increasing of the retardation, but for the higher frequency region or at the smaller grazing angle, the self similarity will still exist for the lower generation quasi-superlattice. (author). 19 refs, 2 figs, 1 tab

Formation mechanism of gas bubble superlattice in UMo metal fuels: Phase-field modeling investigation

Energy Technology Data Exchange (ETDEWEB)

Hu, Shenyang, E-mail: shenyang.hu@pnnl.gov; Burkes, Douglas E.; Lavender, Curt A.; Senor, David J.; Setyawan, Wahyu; Xu, Zhijie

2016-10-15

Nano-gas bubble superlattices are often observed in irradiated UMo nuclear fuels. However, the formation mechanism of gas bubble superlattices is not well understood. A number of physical processes may affect the gas bubble nucleation and growth; hence, the morphology of gas bubble microstructures including size and spatial distributions. In this work, a phase-field model integrating a first-passage Monte Carlo method to investigate the formation mechanism of gas bubble superlattices was developed. Six physical processes are taken into account in the model: 1) heterogeneous generation of gas atoms, vacancies, and interstitials informed from atomistic simulations; 2) one-dimensional (1-D) migration of interstitials; 3) irradiation-induced dissolution of gas atoms; 4) recombination between vacancies and interstitials; 5) elastic interaction; and 6) heterogeneous nucleation of gas bubbles. We found that the elastic interaction doesn’t cause the gas bubble alignment, and fast 1-D migration of interstitials along 〈110〉 directions in the body-centered cubic U matrix causes the gas bubble alignment along 〈110〉 directions. It implies that 1-D interstitial migration along [110] direction should be the primary mechanism of a fcc gas bubble superlattice which is observed in bcc UMo alloys. Simulations also show that fission rates, saturated gas concentration, and elastic interaction all affect the morphology of gas bubble microstructures.

Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

Energy Technology Data Exchange (ETDEWEB)

Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

2008-06-02

Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

First-principles modeling of titanate/ruthenate superlattices

Science.gov (United States)

Junquera, Javier

2013-03-01

The possibility to create highly confined two-dimensional electron gases (2DEG) at oxide interfaces has generated much excitement during the last few years. The most widely studied system is the 2DEG formed at the LaO/TiO2 polar interface between LaAlO3 and SrTiO3, where the polar catastrophe at the interface has been invoked as the driving force. More recently, partial or complete delta doping of the Sr or Ti cations at a single layer of a SrTiO3 matrix has also been used to generate 2DEG. Following this recipe, we report first principles characterization of the structural and electronic properties of (SrTiO3)5/(SrRuO3)1 superlattices, where all the Ti of a given layer have been replaced by Ru. We show that the system exhibits a spin-polarized two-dimensional electron gas extremely confined to the 4 d orbitals of Ru in the SrRuO3 layer, a fact that is independent of the level of correlation included in the simulations. For hybrid functionals or LDA+U, every interface in the superlattice behaves as minority-spin half-metal ferromagnet, with a magnetic moment of μ = 2.0 μB/SrRuO3 unit. The shape of the electronic density of states, half metallicity and magnetism are explained in terms of a simplified tight-binding model, considering only the t2 g orbitals plus (i) the bi-dimensionality of the system, and (ii) strong electron correlations. Possible applications are discussed, from their eventual role in thermoelectric applications to the possible tuning of ferromagnetic properties of the 2DEG with the polarization of the dielectric. Work done in collaboration with P. García, M. Verissimo-Alves, D. I. Bilc, and Ph. Ghosez. Financial support provided by MICINN Grant FIS2009-12721-C04-02, and by the European Union Grant No. CP-FP 228989-2 ``OxIDes.'' The authors thankfully acknowledge the computer resources, technical expertise and assistance provided by the BSC/RES.

Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

International Nuclear Information System (INIS)

Khayatzadeh Mahani, Mohammad Reza; Faizabadi, Edris

2008-01-01

The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In x Ga (1-x) As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended

InN/GaN short-period superlattices as ordered InGaN ternary alloys

International Nuclear Information System (INIS)

Kusakabe, Kazuhide; Imai, Daichi; Wang, Ke; Yoshikawa, Akihiko

2016-01-01

Coherent (InN) 1 /(GaN) n short-period superlattices (SPSs) were successfully grown through dynamic atomic layer epitaxy (D-ALEp) mode by RF-plasma molecular beam epitaxy (MBE), where GaN layer thicknesses n were thinned down to 4 monolayer (ML). After this achievement, we demonstrated quasi-ternary InGaN behavior in their photoluminescence (PL) spectra for the first time. It was found interestingly that GaN layer thickness of n = 4 ML was the criterion both for structural control and continuum-band formation. Although highly lattice-mismatched InN/GaN interfaces easily introduce relaxation in (InN) 1 /(GaN) 4 SPSs during growth depending on the dynamic surface stoichiometry condition, this problem was overcome by precise control/removal of fluid-like residual In/Ga metals on the growth front with in-situ monitoring method. The (InN) 1 /(GaN) n SPSs with n ≥ 7 ML showed a constant PL peak energy around 3.2 eV at 12 K, reflecting discrete electron/hole wavefunctions. On the other hand, the (InN) 1 /(GaN) 4 SPSs indicated the red-shifted PL peak at 2.93 eV at 12 K, which was attributed to the continuum-band state with increasing in the overlap of electrons/hole wavefunctions. This result is concluded that the (InN) 1 /(GaN) 4 SPSs can be considered as ordered InGaN alloys. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

Science.gov (United States)

Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

2017-10-01

Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

International Nuclear Information System (INIS)

Li, J.H.; Moss, S.C.; Stokes, D.W.; Caha, O.; Bassler, K.E.; Ammu, S.L.; Bai, J.

2005-01-01

Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers

Structural and physical properties of InAlAs quantum dots grown on GaAs

Science.gov (United States)

Vasile, B. S.; Daly, A. Ben; Craciun, D.; Alexandrou, I.; Lazar, S.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Craciun, V.

2018-04-01

Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

Comparison of the Cc and R3c space groups for the superlattice phase of Pb(Zr0.52Ti0.48)O3

International Nuclear Information System (INIS)

Ranjan, Rajeev; Singh, Akhilesh Kumar; Ragini; Pandey, Dhananjai

2005-01-01

Recent controversy about the space group of the low temperature superlattice phase of Pb(Zr 0.52 Ti 0.48 )O 3 is settled. It is shown that the R3c space group for the superlattice phase cannot correctly account for the peak positions of the superlattice reflections present in the neutron diffraction patterns. The correct space group is reconfirmed to be Cc. A comparison of the atomic coordinates of Cc and Cm space groups is also presented to show that in the absence of superlattice reflections, as is the case with x-ray diffraction data, one would land up in the Cm space group. This superlattice phase is found to coexist with another monoclinic phase of the Cm space group

Misfit Strain in Superlattices Controlling the Electron-Lattice Interaction via Micro strain in Active Layers

International Nuclear Information System (INIS)

Poccia, N.; Ricci, A.; Bianconi, N.

2010-01-01

High-temperature superconductivity (HTS) emerges in quite different electronic materials: cuprates, diborides, and iron-pnictide superconductors. Looking for unity in the diversity we find in all these materials a common lattice architecture: they are practical realizations of heterostructures at atomic limit made of superlattices of metallic active layers intercalated by spacers as predicted in 1993 by one of us. The multilayer architecture is the key feature for the presence of electronic topological transitions where the Fermi surface of one of the subbands changes dimensionality. The superlattice misfit strain η between the active and spacer layers is shown to be a key variable to drive the system to the highest critical temperature Tc that occurs at a particular point of the 3D phase diagram Tc(θ, η) where d is the charge transfer or doping. The plots of Tc as a function of misfit strain at constant charge transfer in cuprates show a first-order quantum critical phase transition where an itinerant striped magnetic phase competes with superconductivity in the proximity of a structural phase transition, that is, associated with an electronic topological transition. The shape resonances in these multi gap superconductors is associated with the maximum Tc.

Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

International Nuclear Information System (INIS)

Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

2013-01-01

The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

Hierarchical self-assembly of hexagonal single-crystal nanosheets into 3D layered superlattices with high conductivity

Science.gov (United States)

Tao, Yulun; Shen, Yuhua; Yang, Liangbao; Han, Bin; Huang, Fangzhi; Li, Shikuo; Chu, Zhuwang; Xie, Anjian

2012-05-01

While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (Mw/Mn = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm-1, which is even higher than that of the highest previously reported value (16 S cm-1). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost.While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and

Magnon band structure and magnon density in one-dimensional magnonic crystals

International Nuclear Information System (INIS)

Qiu, Rong-ke; Huang, Te; Zhang, Zhi-dong

2014-01-01

By using Callen's Green's function method and the Tyablikov and Anderson–Callen decoupling approximations, we systematically study the magnon band structure and magnon density perpendicular to the superlattice plane of one-dimensional magnonic crystals, with a superlattice consisting of two magnetic layers with ferromagnetic (FM) or antiferromagnetic (AFM) interlayer exchange coupling. The effects of temperature, interlayer coupling, anisotropy and external magnetic field on the magnon-energy band and magnon density in the K x -direction are investigated in three situations: a) the magnon band of magnetic superlattices with FM interlayer coupling, b) separate and c) overlapping magnon bands of magnetic superlattices with AFM interlayer coupling. In the present work, a quantum approach is developed to study the magnon band structure and magnon density of magnonic crystals and the results are beneficial for the design of magnonic-crystal waveguides or gigahertz-range spin-wave filters. - Highlights: • A quantum approach has been developed to study the magnon band of magnonic crystals. • The separate and overlapping magnon bands of magnetic superlattices are investigated. • The results are beneficial for the design of gigahertz-range spin-wave filters

Magnon band structure and magnon density in one-dimensional magnonic crystals

Energy Technology Data Exchange (ETDEWEB)

Qiu, Rong-ke, E-mail: rkqiu@163.com [Shenyang University of Technology, Shenyang 110870 (China); Huang, Te [Shenyang University of Technology, Shenyang 110870 (China); Zhang, Zhi-dong [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

2014-11-15

By using Callen's Green's function method and the Tyablikov and Anderson–Callen decoupling approximations, we systematically study the magnon band structure and magnon density perpendicular to the superlattice plane of one-dimensional magnonic crystals, with a superlattice consisting of two magnetic layers with ferromagnetic (FM) or antiferromagnetic (AFM) interlayer exchange coupling. The effects of temperature, interlayer coupling, anisotropy and external magnetic field on the magnon-energy band and magnon density in the K{sub x}-direction are investigated in three situations: a) the magnon band of magnetic superlattices with FM interlayer coupling, b) separate and c) overlapping magnon bands of magnetic superlattices with AFM interlayer coupling. In the present work, a quantum approach is developed to study the magnon band structure and magnon density of magnonic crystals and the results are beneficial for the design of magnonic-crystal waveguides or gigahertz-range spin-wave filters. - Highlights: • A quantum approach has been developed to study the magnon band of magnonic crystals. • The separate and overlapping magnon bands of magnetic superlattices are investigated. • The results are beneficial for the design of gigahertz-range spin-wave filters.

Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

International Nuclear Information System (INIS)

Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

2009-01-01

Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices

NARCIS (Netherlands)

Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

2016-01-01

Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to

Full controlling of Fano resonances in metal-slit superlattice.

Science.gov (United States)

Deng, Zi-Lan; Yogesh, Natesan; Chen, Xiao-Dong; Chen, Wen-Jie; Dong, Jian-Wen; Ouyang, Zhengbiao; Wang, Guo Ping

2015-12-18

Controlling of the lineshape of Fano resonance attracts much attention recently due to its wide capabilities for lasing, biosensing, slow-light applications and so on. However, the controllable Fano resonance always requires stringent alignment of complex symmetry-breaking structures and thus the manipulation could only be performed with limited degrees of freedom and narrow tuning range. Furthermore, there is no report so far on independent controlling of both the bright and dark modes in a single structure. Here, we semi-analytically show that the spectral position and linewidth of both the bright and dark modes can be tuned independently and/or simultaneously in a simple and symmetric metal-slit superlattice, and thus allowing for a free and continuous controlling of the lineshape of both the single and multiple Fano resonances. The independent controlling scheme is applicable for an extremely large electromagnetic spectrum range from optical to microwave frequencies, which is demonstrated by the numerical simulations with real metal and a microwave experiment. Our findings may provide convenient and flexible strategies for future tunable electromagnetic devices.

Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

KAUST Repository

Kaushik, Ananth P.

2012-10-29

The preference of experimentally realistic sized 4-nm facetted nanocrystals (NCs), emulating Pb chalcogenide quantum dots, to spontaneously choose a crystal habit for NC superlattices (Face Centered Cubic (FCC) vs. Body Centered Cubic (BCC)) is investigated using molecular simulation approaches. Molecular dynamics simulations, using united atom force fields, are conducted to simulate systems comprised of cube-octahedral-shaped NCs covered by alkyl ligands, in the absence and presence of experimentally used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice and its preference of symmetry, as we vary the ligand length of the chains, from 9 to 24 CH2 groups, and the choice of solvent. We find that hexane and toluene are "good" solvents for the NCs, which penetrate the ligand corona all the way to the NC surfaces. We determine the free energy difference between FCC and BCC NC superlattice symmetries to determine the system\\'s preference for either geometry, as the ratio of the length of the ligand to the diameter of the NC is varied. We explain these preferences in terms of different mechanisms in play, whose relative strength determines the overall choice of geometry. © 2012 Wiley Periodicals, Inc.

Study of the inhomogeneous characteristics of modified YBa_2Cu_3O_7_-_d thin films and (YBa_2Cu_3O_7_-_d /LaAlO_3)_n superlattices: growth and properties

International Nuclear Information System (INIS)

Thimont, Yohann

2009-01-01

This manuscript is devoted to the study of crystallographic and physical properties of superconductor YBCO thin films and superconductor/insulator (YBCO/LAO)_n superlattices. The first stage of this work was to optimize the YBCO thin film deposition. Elaboration of a new physical model allows us to determine a critical temperature distribution inside the films thickness. Nevertheless, no homogeneous critical temperature inside the films can be obtained. This work shows that the interface strains modify the crystallographic and physical properties. We developed a new simulation method concerning the XRD peak shape analysis which allows us to determine YBCO cell deformation profile along the c-bar axis. About superlattices, effects of thickness on the physical and structural properties have been noticed. Transmission Electron Microscopy exhibits existence of structural defects in the films. Ending, the physical model proposed in the present work provides important information regarding the magnetic interaction between two superconductor layers, which seems to limit application of these superlattices in the realization of complex electronic devices. (author) [fr

Angle-dependent bandgap engineering in gated graphene superlattices

Energy Technology Data Exchange (ETDEWEB)

García-Cervantes, H.; Sotolongo-Costa, O. [Centro de Investigación en Ciencias, IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, México (Mexico); Gaggero-Sager, L. M. [CIICAp, IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, México (Mexico); Naumis, G. G. [Instituto Física, Depto. de Física-Química, Universidad Nacional Autónoma de México (UNAM). Apdo. Postal 20-364, 01000, México D.F., México (Mexico); Rodríguez-Vargas, I., E-mail: isaac@fisica.uaz.edu.mx [Centro de Investigación en Ciencias, IICBA, Universidad Autónoma del Estado de Morelos, Av. Universidad 1001, Col. Chamilpa, 62209 Cuernavaca, Morelos, México (Mexico); Unidad Académica de Física, Universidad Autónoma de Zacatecas, Calzada Solidaridad Esquina Con Paseo La Bufa S/N, 98060 Zacatecas, Zac., México (Mexico)

2016-03-15

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

Angle-dependent bandgap engineering in gated graphene superlattices

International Nuclear Information System (INIS)

García-Cervantes, H.; Sotolongo-Costa, O.; Gaggero-Sager, L. M.; Naumis, G. G.; Rodríguez-Vargas, I.

2016-01-01

Graphene Superlattices (GSs) have attracted a lot of attention due to its peculiar properties as well as its possible technological implications. Among these characteristics we can mention: the extra Dirac points in the dispersion relation and the highly anisotropic propagation of the charge carriers. However, despite the intense research that is carried out in GSs, so far there is no report about the angular dependence of the Transmission Gap (TG) in GSs. Here, we report the dependence of TG as a function of the angle of the incident Dirac electrons in a rather simple Electrostatic GS (EGS). Our results show that the angular dependence of the TG is intricate, since for moderated angles the dependence is parabolic, while for large angles an exponential dependence is registered. We also find that the TG can be modulated from meV to eV, by changing the structural parameters of the GS. These characteristics open the possibility for an angle-dependent bandgap engineering in graphene.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

2017-01-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

KAUST Repository

Cossu, Fabrizio

2017-08-01

Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

Transport properties of graphene under periodic and quasiperiodic magnetic superlattices

Energy Technology Data Exchange (ETDEWEB)

Lu, Wei-Tao, E-mail: luweitao@lyu.edu.cn [School of Science, Linyi University, 276005 Linyi (China); Institute of Condensed Matter Physics, Linyi University, 276005 Linyi (China); Wang, Shun-Jin [Department of Physics, Sichuan University, 610064 Chengdu (China); Wang, Yong-Long; Jiang, Hua [School of Science, Linyi University, 276005 Linyi (China); Institute of Condensed Matter Physics, Linyi University, 276005 Linyi (China); Li, Wen [School of Science, Linyi University, 276005 Linyi (China)

2013-08-15

We study the transmission of Dirac electrons through the one-dimensional periodic, Fibonacci, and Thue–Morse magnetic superlattices (MS), which can be realized by two different magnetic blocks arranged in certain sequences in graphene. The numerical results show that the transmission as a function of incident energy presents regular resonance splitting effect in periodic MS due to the split energy spectrum. For the quasiperiodic MS with more layers, they exhibit rich transmission patterns. In particular, the transmission in Fibonacci MS presents scaling property and fragmented behavior with self-similarity, while the transmission in Thue–Morse MS presents more perfect resonant peaks which are related to the completely transparent states. Furthermore, these interesting properties are robust against the profile of MS, but dependent on the magnetic structure parameters and the transverse wave vector.

Strained superlattices and magnetic tunnel junctions based on doped manganites

International Nuclear Information System (INIS)

Yafeng Lu

2001-01-01

In the first part of this work the effect of biaxial strain on the structure and transport properties of doped manganites has been studied to explore the relevance of Jahn-Teller electron-lattice interaction for the CMR phenomenon in these materials. A series of high quality, coherently strained La 2/3 (Ca or Ba) 1/3 MnO 3 /SrTiO 3 superlattices with different modulation periods have been fabricated on (001) SrTiO 3 and NdGaO 3 substrates by laser molecular beam epitaxy. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). The fabricated superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.2 ∝0.03 ). The in-plane coherency strain could be varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting lattice distortion of La 2/3 (Ca or Ba) 1/3 MnO 3 . By the in-plane coherency strain the out-of-plane lattice constant could be continuously adjusted by varying the relative thickness of the SrTiO 3 and La 2/3 (Ca or Ba) 1/3 MnO 3 layers: the c-axis lattice constant of La 2/3 Ba 1/3 MnO 3 was found to vary from 3.910 A to 3.975 A due to a compressive in-plane strain, whereas the c-axis constant of La 2/3 Ca 1/3 MnO 3 was found to change from 3.87 A to 3.79A due to tensile in-plane strain. The strain results in a biaxial distortion ε bi of La 2/3 (Ca or Ba) 1/3 MnO 3 that strongly affects the electrical transport properties and the magnetoresistance. Our measurements show that there is a clear correlation between ε bi and the temperature T p corresponding to the maximum in the resistivity versus temperature curves as well as the measured magnetoresistance in the two systems. In the second part of this work we have investigated the spin-dependent tunneling in trilayer structures of La 2/3 Ba 1/3 MnO 3 /SrTiO 3 /La 2/3 Ba 1/3 MnO 3 . (orig.)

Magnetization study of interlayer exchange in semiconductor EuS-PbS ferromagnetic wedge multilayers

International Nuclear Information System (INIS)

Kowalczyk, L.; Osinniy, V.; Chernyshova, M.; Dziawa, P.; Boratynski, A.; Story, T.; Smits, C.J.P.; Swagten, H.J.M.; Sipatov, A.Yu.; Volobuev, V.V.

2006-01-01

Interlayer coupling was experimentally studied in semiconductor EuS-PbS ferromagnetic superlattice wedge structures grown on KCl (0 0 1) substrates with the wedges covering the semiconductor nonmagnetic PbS spacer layer thickness from 0.3 to 6 nm. Structural parameters of the wedges were examined by X-ray diffraction analysis of EuS-PbS superlattice period. Measurements of magnetic hysteresis loops of EuS-PbS structures were performed by both SQUID (for small terminal parts of the wedge) and MOKE (magneto-optical analysis along the wedge) magnetometry. A strong decrease of magnetic remanence and an increase of saturation field observed for EuS-PbS structures with the PbS spacer thickness decreasing below about 1.5 nm is discussed in terms of the influence of antiferromagnetic interlayer coupling

Thermoelectric and spincaloric properties of epitaxial LaNiO{sub 3}/SrTiO{sub 3} superlattices from first principles

Energy Technology Data Exchange (ETDEWEB)

Geisler, Benjamin [FRM II, Technische Universitaet Muenchen, Garching (Germany); Fakultaet fuer Physik, Universitaet Duisburg-Essen, Duisburg (Germany); Blanca-Romero, Ariadna [Imperial College, London (United Kingdom); Pentcheva, Rossitza [Fakultaet fuer Physik, Universitaet Duisburg-Essen, Duisburg (Germany)

2016-07-01

Modern layer-by-layer fabrication techniques make it possible to grow epitaxial oxide superlattices with atomic precision. By combining accurate DFT+U calculations to determine the atomic and electronic structure and Boltzmann transport theory we show how a targeted design of the interface composition can be used to optimize the thermoelectric and/or spincaloric properties of LaNiO{sub 3}/SrTiO{sub 3}(001) superlattices. A TiO{sub 2}/LaO interface induces n-type doping, and a (potentially highly spin-polarized) charge current arises solely in-plane in the NiO{sub 2} layers. The out-of-plane resistance is high, since the SrTiO{sub 3} layers act as tunneling barriers. In contrast, a NiO{sub 2}/SrO interface leads to p-type doping. In this case, also the valence band of SrTiO{sub 3} contributes to the transmission, thereby reducing the out-of-plane resistance significantly. Besides this doping effect we find that the interface composition influences the electronic band structure, which leads to a nontrivial behavior of the Seebeck coefficient. Funding by the DFG within TRR 80 (G3 and G8) is acknowledged.

The 640 × 512 LWIR type-II superlattice detectors operating at 110 K

Science.gov (United States)

Tan, Bi-Song; Zhang, Chuan-Jie; Zhou, Wen-Hong; Yang, Xiao-Jie; Wang, Guo-Wei; Li, Yun-Tao; Ding, Yan-Yan; Zhang, Zhou; Lei, Hua-Wei; Liu, Wei-Hua; Du, Yu; Zhang, Li-Fang; Liu, Bin; Wang, Li-Bao; Huang, Li

2018-03-01

The type-II InAs/GaSb superlattices (T2SLs)-based 640 × 512 long wavelength infrared (LWIR) Focal Plane Array (FPA) detector with15 μm pitch and 50% cut-off wavelength of 10.5 μm demonstrates a peak quantum efficiency of 38.6% and peak detectivity of 1.65 × 1011 cm Hz1/2 W-1 at 8.1 μm, high pixel operability of 99.5% and low responsivity non-uniformity of 2.69% at 80 K. The FPA exhibits clear infrared imaging at 110 K and diffusion-limited dark current densities below Tennant's 'Rule07' at temperature above 100 K, which is attributed to the efficient suppression of diffusion dark current and surface leak current by introducing M-structure barrier and double hetero-structure passivation layers.

Building superlattices from individual nanoparticles via template-confined DNA-mediated assembly

Energy Technology Data Exchange (ETDEWEB)

Lin, Qing-Yuan; Mason, Jarad A.; Li, Zhongyang; Zhou, Wenjie; O’Brien, Matthew N.; Brown, Keith A.; Jones, Matthew R.; Butun, Serkan; Lee, Byeongdu; Dravid, Vinayak P.; Aydin, Koray; Mirkin, Chad A.

2018-01-18

DNA programmable assembly has been combined with top-down lithography to construct superlattices of discrete, reconfigurable nanoparticle architectures on a gold surface over large areas. Specifically, individual colloidal plasmonic nanoparticles with different shapes and sizes are assembled with ‘locked” nucleic acids in polymer pores into oriented architectures that feature tunable arrangements and independently controllable distances at both nanometer and micrometer length scales. These structures, which would be difficult to construct via other common assembly methods, provide a platform to systematically study and control light-matter interactions in nanoparticle-based optical materials. The generality and potential of this approach is explored by identifying a broadband absorber with a solvent polarity response that allows dynamic tuning of the wavelength response and amplitude of visible light absorption.

Transport and spin effects in homogeneous magnetic superlattice

International Nuclear Information System (INIS)

Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.

2000-09-01

Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)

Generation of three-mode continuous-variable entanglement by cascaded nonlinear interactions in a quasiperiodic superlattice

International Nuclear Information System (INIS)

Yu, Y. B.; Xie, Z. D.; Yu, X. Q.; Li, H. X.; Xu, P.; Yao, H. M.; Zhu, S. N.

2006-01-01

The generation of three-mode continuous-variable entanglement in a quasiperiodically optical superlattice is studied theoretically in this paper. This work is based on the previous experiment result in which three-color light generated from a quasiperiodically optical superlattice through a stimulated parametric down-conversion cascaded with a sum-frequency process. The degree of quadrature phase amplitude correlations, a nonclassical characteristic, among the three mode was discussed by a sufficient inseparability criterion for continuous-variable entanglement, which was proposed by van Loock and Furusawa

Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

International Nuclear Information System (INIS)

Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

2007-01-01

The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

Implanted muon study of superlattice ordering in palladium hydride PdH/sub 0. 64/

Energy Technology Data Exchange (ETDEWEB)

Cox, S F.J.; Ross, D K; Witchell, D; Hartmann, O; Hempelmann, R; Richter, D; Stoneham, A M

1986-12-01

The superlattice ordering transition in PdH/sub 0.64/ is detected by implanted muon spectroscopy. The temperature dependence around 50 K of the static ..mu..SR depolarisation rate, measured in low transverse magnetic field in a polycrystalline sample, indicates appropriate changes in the average number of nearest neighbour protons. These measurements establish the similarity of the proton-proton and muon-proton interactions within the interstitial lattice. The implanted muons reveal the onset of short range order as the transition is approached and, to the extent that vacancy sites are available, participate in the predicted structure below the critical temperature.

The Amplification of the Critical Temperature by Quantum Size Effects In a Superlattice of Quantum Wires

International Nuclear Information System (INIS)

Bianconi, A.; Missori, M.; Saini, N.L.; Oyanagi, H.; Yamaguchi, H.; Nishihara, Y.; Ha, D.H.; Della Longa, S.

1995-01-01

Here we report experimental evidence that the high Tc superconductivity in a cuprate perovskite occurs in a superlattice of quantum wires. The structure of the high Tc superconducting CuO 2 plane in Bi 2 Sr 2 CaCu 2 O 8+y (Bi2212) at the mesoscopic level (10-100 A) has been determined. It is decorated by a plurality of parallel superconducting stripes of width L=14± 1 A defined by the domain walls formed by stripes of width W=11+1 A characterized by a 0.17 A shorter Cu-O (apical) distance and a large tilting angle θ =12±4degree of the distorted square pyramids. We show that this particular heterostructure provides the physical mechanism raising Tc from the low temperature range Tc 2 plane by a factor ∼10 is realized by 1) tuning the Fermi level near the bottom of the second ubband of the stripes, with k y =2π/L, formed by the quantum size effect and 2) by forming a superlattice of wires with domain walls of width W of the order of the superconducting coherence length ξ 0 . (author)

Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

KAUST Repository

Kaushik, Ananth P.; Clancy, Paulette

2012-01-01

used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice

Interwell and intrawell magnetoexcitons in GaAs/AlGaAs superlattices

DEFF Research Database (Denmark)

Timofeev, V. B.; Filin, A. I.; Tartakovskii, A. I.

1997-01-01

The formation of spatially indirect (interwell) excitons in superlattices (SLs) with different barrier widths (different tunneling coupling) is experimentally investigated in a strong enough magnetic field with the use of photoluminescence (PL), photoluminescence excitation (PLE), reflectance spec...

Surface acoustic waves in acoustic superlattice lithium niobate coated with a waveguide layer

Science.gov (United States)

Yang, G. Y.; Du, J. K.; Huang, B.; Jin, Y. A.; Xu, M. H.

2017-04-01

The effects of the waveguide layer on the band structure of Rayleigh waves are studied in this work based on a one-dimensional acoustic superlattice lithium niobate substrate coated with a waveguide layer. The present phononic structure is formed by the periodic domain-inverted single crystal that is the Z-cut lithium niobate substrate with a waveguide layer on the upper surface. The plane wave expansion method (PWE) is adopted to determine the band gap behavior of the phononic structure and validated by the finite element method (FEM). The FEM is also used to investigate the transmission of Rayleigh waves in the phononic structure with the interdigital transducers by means of the commercial package COMSOL. The results show that, although there is a homogeneous waveguide layer on the surface, the band gap of Rayleigh waves still exist. It is also found that increasing the thickness of the waveguide layer, the band width narrows and the band structure shifts to lower frequency. The present approach can be taken as an efficient tool in designing of phononic structures with waveguide layer.

Surface acoustic waves in acoustic superlattice lithium niobate coated with a waveguide layer

Directory of Open Access Journals (Sweden)

G. Y. Yang

2017-04-01

Full Text Available The effects of the waveguide layer on the band structure of Rayleigh waves are studied in this work based on a one-dimensional acoustic superlattice lithium niobate substrate coated with a waveguide layer. The present phononic structure is formed by the periodic domain-inverted single crystal that is the Z-cut lithium niobate substrate with a waveguide layer on the upper surface. The plane wave expansion method (PWE is adopted to determine the band gap behavior of the phononic structure and validated by the finite element method (FEM. The FEM is also used to investigate the transmission of Rayleigh waves in the phononic structure with the interdigital transducers by means of the commercial package COMSOL. The results show that, although there is a homogeneous waveguide layer on the surface, the band gap of Rayleigh waves still exist. It is also found that increasing the thickness of the waveguide layer, the band width narrows and the band structure shifts to lower frequency. The present approach can be taken as an efficient tool in designing of phononic structures with waveguide layer.

Quenching long range magnetic excitations in oxygen sub-lattice reconstructed thin films of (SrCuO{sub 2}){sub n}/(SrTiO{sub 2}){sub 2} superlattices

Energy Technology Data Exchange (ETDEWEB)

Dantz, Marcus; Pelliciari, Jonathan; Huang, Yaobo; Bisogni, Valentina; Olalde-Velasco, Paul; Strocov, Vladimir; Schmitt, Thorsten [Paul Scherrer Institut, Villigen PSI (Switzerland); Samal, Debakanta; Koster, Gertjan [MESA+ Institute for Nanotechnology, University of Twente (Netherlands)

2015-07-01

Multi-layered thin cuprate films allow inducing subtle structural changes with which local crystal field and long range magnetic excitations can be finely tuned. In (SrCuO{sub 2}){sub n}/(SrTiO{sub 2}){sub 2} cuprate superlattices, in particular, a structural transformation from a bulk infinite planar to a sheet-like local domain environment has recently been predicted and subsequently observed. Here we present results on the influence of this subtle structural reconstruction on the collective magnetic excitations using high-resolution resonant inelastic x-ray scattering (RIXS) at the Cu L{sub 3} edge. While bulk like infinite layer films exhibit magnon excitations throughout the whole Brillouin zone, decreasing the thickness of the cuprate layers leads to quenching of the magnons starting from the Gamma point successively to the zone boundary, allowing us to study the coherence length of the collective long range magnetic excitations in these cuprate superlattices.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

Science.gov (United States)

Bonilla, L L; Carretero, M; Segura, A

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

Science.gov (United States)

Bonilla, L. L.; Carretero, M.; Segura, A.

2017-12-01

When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

Mechanical properties of ground state structures in substitutional ordered alloys: High strength, high ductility and high thermal stability

International Nuclear Information System (INIS)

Tawancy, H.M.; Aboelfotoh, M.O.

2014-01-01

We have studied the effect of atom arrangements in the ground state structures of substitutional ordered alloys on their mechanical properties using nickel–molybdenum-based alloys as model systems. Three alloys with nominal compositions of Ni–19.43 at% Mo, Ni–18.53 at% Mo–15.21 at% Cr and Ni–18.72 at% Mo–6.14 at% Nb are included in the study. In agreement with theoretical predictions, the closely related Pt 2 Mo-type, DO 22 and D1 a superlattices with similar energies are identified by electron diffraction of ground state structures, which can directly be derived from the parent disordered fcc structure by minor atom rearrangements on {420} fcc planes. The three superlattices are observed to coexist during the disorder–order transformation at 700 °C with the most stable superlattice being determined by the exact chemical composition. Although most of the slip systems in the parent disordered fcc structure are suppressed, many of the twinning systems remain operative in the superlattices favoring deformation by twinning, which leads to considerable strengthening while maintaining high ductility levels. Both the Pt 2 Mo-type and DO 22 superlattices are distinguished by high strength and high ductility due to their nanoscale microstructures, which have high thermal stability. However, the D1 a superlattice is found to exhibit poor thermal stability leading to considerable loss of ductility, which has been correlated with self-induced recrystallization by migration of grain boundaries

Mechanical properties of ground state structures in substitutional ordered alloys: High strength, high ductility and high thermal stability