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Sample records for superlattice structures grown

  1. Influence of substrate quality on structural properties of AlGaN/GaN superlattices grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Schubert, F. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); Merkel, U.; Schmult, S. [TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany); Mikolajick, T. [NaMLab gGmbH, Nöthnitzer Straße 64, 01187 Dresden (Germany); TU Dresden, Institute of Semiconductors and Microsystems, Nöthnitzer Straße 64, 01187 Dresden (Germany)

    2014-02-28

    Short-period AlGaN/GaN superlattices were established as versatile test structures to investigate the structural properties of molecular beam epitaxy (MBE)-grown GaN and AlGaN layers and their dependence on the GaN substrate quality. X-ray diffractometry data of the investigated superlattices allow access to relevant structural parameters such as aluminum mole fraction and layer thicknesses. The occurrence of theoretically predicted intense high-order satellite peaks and pronounced interface fringes in the diffraction pattern reflects abrupt interfaces and perfect 2-dimensional growth resulting in smooth surfaces. The data unambiguously demonstrate that the structural quality of the MBE grown layers is limited by the structural properties of the GaN substrate.

  2. Structural disorder of natural BimSen superlattices grown by molecular beam epitaxy

    Science.gov (United States)

    Springholz, G.; Wimmer, S.; Groiss, H.; Albu, M.; Hofer, F.; Caha, O.; Kriegner, D.; Stangl, J.; Bauer, G.; Holý, V.

    2018-05-01

    The structure and morphology of BimSen epitaxial layers with compositions ranging from Bi2Se3 to the Bi1Se1 grown by molecular beam epitaxy with different flux compositions are investigated by transmission electron microscopy, high-resolution x-ray diffraction, and atomic force microscopy. It is shown that the lattice structure changes significantly as a function of the beam flux composition, i.e., Se/BiSe flux ratio that determines the stoichiometry of the layers. A perfect Bi2Se3 phase is formed only with a sufficiently high additional Se flux, whereas Bi1Se1 is obtained when only a BiSe compound source without additional Se is used. For intermediate values of the excess Se flux during growth, Bi2Se3 -δ layers are obtained with the Se deficit δ varying between 0 and 1. This Se deficit is accommodated by incorporation of additional Bi-Bi double layers into the Bi2Se3 structure that otherwise exclusively consists of Se-Bi-Se-Bi-Se quintuple layers. While a periodic insertion of such Bi double layers would result in the formation of natural BimSen superlattices, we find that this Bi double-layer insertion is rather stochastic with a high degree of disorder depending on the film composition. Therefore, the structure of such epilayers is better described by a one-dimensional paracrystal model, consisting of disordered sequences of quintuple and double layers rather than by strictly periodic natural superlattices. From detailed analysis of the x-ray diffraction data, we determine the dependence of the lattice parameters a and c and distances of the individual (0001) planes dj as a function of composition, evidencing that only the in-plane lattice parameter a shows a linear dependence on composition. The simulation of the diffraction curves with the random stacking paracrystal model yields an excellent agreement with the experimental data and it brings quantitative information on the randomness of the stacking sequence, which is compared to growth modeling using Monte

  3. Magnetic structure of holmium-yttrium superlattices

    DEFF Research Database (Denmark)

    Jehan, D.A.; McMorrow, D.F.; Cowley, R.A.

    1993-01-01

    We present the results of a study of the chemical and magnetic structures of a series of holmium-yttrium superlattices and a 5000 angstrom film of holmium, all grown by molecular-beam epitaxy. By combining the results of high-resolution x-ray diffraction with detailed modeling, we show...... that the superlattices have high crystallographic integrity: the structural coherence length parallel to the growth direction is typically almost-equal-to 2000 angstrom, while the interfaces between the two elements are well defined and extend over approximately four lattice planes. The magnetic structures were...... determined using neutron-scattering techniques. The moments on the Ho3+ ions in the superlattices form a basal-plane helix. From an analysis of the superlattice structure factors of the primary magnetic satellites, we are able to determine separately the contributions made by the holmium and yttrium...

  4. Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

    NARCIS (Netherlands)

    Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

    2001-01-01

    We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

  5. Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

    2017-03-15

    InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. Electronic structure of superlattices

    International Nuclear Information System (INIS)

    Altarelli, M.

    1987-01-01

    Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt

  7. Passivation of MBE grown InGaSb/InAs superlattice photodiodes

    Science.gov (United States)

    Hill, Cory J.; Keo, Sam S.; Mumolo, Jason M.; Gunapala, Sarath D.

    2005-01-01

    We have performed wet chemical passivation tests on InGaSb/InAs superlattice photodiode structures grown molecular beam epitaxy. The details of the devices growth and characterization as well as the results of chemical passivation involving RuCl3 and H2SO4 with SiO2 dielectric depositions are presented.

  8. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  9. Magnetic structures of holmium-lutetium alloys and superlattices

    DEFF Research Database (Denmark)

    Swaddling, P.P.; Cowley, R.A.; Ward, R.C.C.

    1996-01-01

    Alloys and superlattices of Ho and Lu have been grown using molecular beam epitaxy and their magnetic structures determined using neutron-scattering techniques. The 4f moments in the alloys form a helix at all compositions with the moments aligned in the basal plane perpendicular to the wave vector...... of the helix remaining coherent through the nonmagnetic Lu blocks. The neutron scattering from the superlattices is consistent with a model in which there are different phase advances of the helix turn angle through the Ho and Lu blocks, but with a localized moment on the Ho sites only. A comparison...... of Ho and Lu. At low temperatures, for superlattices with fewer than approximately twenty atomic planes of Ho, the Ho moments within a block undergo a phase transition from helical to ferromagnetic order, with the coupling between successive blocks dependent on the thickness of the Lu spacer....

  10. Structural and magnetic properties of holmium-scandium alloys and superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    The properties of Ho-Sc alloys and superlattices grown by molecular-beam epitaxy have been investigated using x-ray and neutron-diffraction techniques. Structural studies reveal that the alloy samples have different a lattice parameters for the Sc-seed layer and the Ho:Sc alloy grown on top...... of the seed layer; while the superlattices have different a lattice parameters for the Sc seed, and for both the Ho and Sc in the superlattice layers. The structural characteristics are related to the large lattice mismatches (of the order 7%) between the constituent elements. The magnetic moments...

  11. Quantitative x-ray structure determination of superlattices and interfaces

    International Nuclear Information System (INIS)

    Schuller, I.K.; Fullerton, E.E.

    1990-01-01

    This paper presents a general procedure for quantitative structural refinement of superlattice structures. To analyze a wide range of superlattices, the authors have derived a general kinematical diffraction formula that includes random, continuous and discrete fluctuations from the average structure. By implementing a non-linear fitting algorithm to fit the entire x-ray diffraction profile, refined parameters that describe the average superlattice structure, and deviations from this average are obtained. The structural refinement procedure is applied to a crystalline/crystalline Mo/Ni superlattices and crystalline/amorphous Pb/Ge superlattices. Roughness introduced artificially during growth in Mo/Ni superlattices is shown to be accurately reproduced by the refinement

  12. Future device applications of low-dimensional carbon superlattice structures

    Science.gov (United States)

    Bhattacharyya, Somnath

    2005-03-01

    We observe superior transport properties in low-dimensional amorphous carbon (a-C) and superlattice structures fabricated by a number of different techniques. Low temperature conductivity of these materials is explained using argument based on the crossover of dimensionality of weak localization and electron-electron interactions along with a change of sign of the magneto-resistance. These trends are significantly different from many other well characterized ordered or oriented carbon structures, and, show direct evidence of high correlation length, mobility and an effect of the dimensionality in low-dimensional a-C films. We show routes to prepare bespoke features by tuning the phase relaxation time in order to make high-speed devices over large areas. The artificially grown multi-layer superlattice structures of diamond-like amorphous carbon films show high-frequency resonance and quantum conductance suggesting sufficiently high values of phase coherence length in the present disordered a-C system that could lead to fast switching multi-valued logic.

  13. Band structure of superlattice with δ-like potential

    International Nuclear Information System (INIS)

    Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

    1993-08-01

    Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

  14. Dynamical x-ray diffraction studies of interfacial strain in superlattices grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Vandenberg, J.M.; Chu, S.N.G.; Hamm, R.A.; Panish, M.B.; Ritter, D.; Mancrander, A.T.

    1992-01-01

    This paper reports on dynamical X-ray diffraction studies that have been carried out for lattice-matched InGaAs/InP superlattices grown by modified molecular beam epitaxy (MBE) techniques. The (400) X-ray satellite pattern, which is predominantly affected by the strain modulation, was analyzed. The strain and thickness of the actual layers including the presence of strained interfacial regions were determined

  15. Surface electron structure of short-period semiconductor superlattice

    International Nuclear Information System (INIS)

    Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

    2004-01-01

    Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

  16. Fabrication of C60/amorphous carbon superlattice structures

    International Nuclear Information System (INIS)

    Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2001-01-01

    The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure

  17. Thermal transport through Ge-rich Ge/Si superlattices grown on Ge(0 0 1)

    Science.gov (United States)

    Thumfart, L.; Carrete, J.; Vermeersch, B.; Ye, N.; Truglas, T.; Feser, J.; Groiss, H.; Mingo, N.; Rastelli, A.

    2018-01-01

    The cross-plane thermal conductivities of Ge-rich Si/Ge superlattices have been measured using both time-domain thermoreflectance and the differential 3ω method. The superlattices were grown by molecular beam epitaxy on Ge(0 0 1) substrates. Crystal quality and structural information were investigated by x-ray diffractometry and transmission electron microscopy. The influence of segregation during growth on the composition profiles was modeled using the experimental growth temperatures and deposition rates. Those profiles were then employed to obtain parameter-free theoretical estimates of the thermal conductivity by combining first-principles calculations, Boltzmann transport theory and phonon Green’s functions. Good agreement between theory and experiment is observed. The thermal conductivity shows a strong dependence on the composition and the thickness of the samples. Moreover, the importance of the composition profile is reflected in the fact that the thermal conductivity of the superlattices is considerably lower than predicted values for alloys with the same average composition and thickness. Measurement on different samples with the same Si layer thickness and number of periods, but different Ge layer thickness, show that the thermal resistance is only weakly dependent on the Ge layers. We analyze this phenomenon based on the first-principles mode, and build an approximate parametrization showing that, in this regime, the resistivity of a SL is roughly linear on the amount of Si.

  18. Novel electronic structures of superlattice composed of graphene and silicene

    International Nuclear Information System (INIS)

    Yu, S.; Li, X.D.; Wu, S.Q.; Wen, Y.H.; Zhou, S.; Zhu, Z.Z.

    2014-01-01

    Highlights: • Graphene/silicene superlattices exhibit metallic electronic properties. • Dirac point of graphene is folded to the Γ-point in the superlattice system. • Significant changes in the transport properties of the graphene layers are expected. • Small amount of charge transfer from the graphene to the silicene layers is found. - Abstract: Superlattice is a major force in providing man-made materials with unique properties. Here we report a study of the structural and electronic properties of a superlattice made with alternate stacking of graphene and hexagonal silicene. Three possible stacking models, i.e., the top-, bridge- and hollow-stacking, are considered. The top-stacking is found to be the most stable pattern. Although both the free-standing graphene and silicene are semi-metals, our results suggest that the graphene and silicene layers in the superlattice both exhibit metallic electronic properties due to a small amount of charge transfer from the graphene to the silicene layers. More importantly, the Dirac point of graphene is folded to the Γ-point of the superlattice, instead of the K-point in the isolated graphene. Such a change in the Dirac point of graphene could lead to significant change in the transportation property of the graphene layer. Moreover, the band structure and the charge transfer indicate that the interaction between the stacking sheets in the graphene/silicene superlattice is more than just the van der Waals interaction

  19. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  20. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

    2011-01-01

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  1. Lateral structure of (TiSe2)n(NbSe2)m superlattices

    International Nuclear Information System (INIS)

    Noh, M.; Shin, H.; Jeong, K.; Spear, J.; Johnson, D.C.; Kevan, S.D.; Warwick, T.

    1997-01-01

    The structures of a series of (TiSe 2 ) n (NbSe 2 ) m superlattices grown through controlled crystallization of designed multilayer reactants have been studied. X-ray diffraction of the data of the superlattices after crystallization show considerable preferred orientation, with the basal plane of the dichalcogenide structure parallel to the substrate to within 0.1 degree. Lattice refinement using the observed (00scr(l)) diffraction maxima yields lattice parameters along the c axis that are consistent with those expected based on the target superlattices and lattice parameters of the binary constituents. These (00scr(l)) diffraction data, however, contain no information about the crystalline structure in the ab plane of the superlattice associated with the preferred c-axis orientation. Off-specular x-ray diffraction (XRD), scanning electron microscopy, and scanning transmission x-ray microscopy (STXM) were used to explore the structure and homogeneity of the superlattices in the ab plane. XRD results rule out preferred long-range orientational order of the ab plane. Between grains, both the backscattered electron images and STXM images show grain domain structure in the ab plane with a characteristic grain domain size of approximately 50 μm. X-ray absorption microscopy in the STXM mode obtained at the Ti L 2,3 edge shows that the titanium in the superlattices is present as both octahedral Ti consistent with the TiSe 2 structure and metallic Ti. A comparison of the data obtained from these techniques highlights chemical information, which can be deduced on a submicrometer range from the space resolved spectra obtained using STXM. copyright 1997 American Institute of Physics

  2. RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES

    OpenAIRE

    Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.

    1987-01-01

    We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.

  3. A CPA study of the phonon structure of disordered superlattices

    International Nuclear Information System (INIS)

    Shijie Xiong; Gendi Pang; Chienhua Tsai.

    1985-08-01

    The phonon structure of superlattices or modulated alloys with substitutional disorder is studied in the Coherent Phase Approximation (CPA). We consider first the case with diagonal disorder only, by adopting a virtual crystal approximation for the force constants. Then we treat the more complicated case with inclusion of off-diagonal disorder. Numerical examples are also studied in both cases. (author)

  4. Structural study of multilayered vanadium/nickel superlattices

    International Nuclear Information System (INIS)

    Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.

    1985-07-01

    We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak

  5. Electronic structure of a graphene superlattice with massive Dirac fermions

    International Nuclear Information System (INIS)

    Lima, Jonas R. F.

    2015-01-01

    We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a substrate that opens an energy gap of 2Δ in its electronic structure. We find that extra Dirac points appear in the electronic band structure under certain conditions, so it is possible to close the gap between the conduction and valence minibands. We show that the energy gap E g can be tuned in the range 0 ≤ E g  ≤ 2Δ by changing the periodic potential. We analyze the low energy electronic structure around the contact points and find that the effective Fermi velocity in very anisotropic and depends on the energy gap. We show that the extra Dirac points obtained here behave differently compared to previously studied systems

  6. Magnetic Rare-Earth Superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Gibbs, D.; Böni, P.

    1988-01-01

    The magnetic structures of several single‐crystal, magnetic rare‐earth superlattice systems grown by molecular‐beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long‐range magnetic order in Gd‐Y, Dy‐Y, Gd‐Dy, and Ho‐Y periodic superlattices...... are presented. In the Gd‐Y system, an antiphase domain structure develops for certain Y layer spacings, whereas modified helical moment configurations are found to occur in the other systems, some of which are commensurate with the chemical superlattice wavelength. References are made to theoretical interaction...

  7. Modulating nanoparticle superlattice structure using proteins with tunable bond distributions

    International Nuclear Information System (INIS)

    McMillan, Janet R.; Brodin, Jeffrey D.; Millan, Jaime A.; Lee, Byeongdu; Olvera de la Cruz, Monica; Mirkin, Chad A.

    2017-01-01

    Here, we investigate the use of proteins with tunable DNA modification distributions to modulate nanoparticle superlattice structure. Using Beta-galactosidase (βgal) as a model system, we have employed the orthogonal chemical reactivities of surface amines and thiols to synthesize protein-DNA conjugates with 36 evenly distributed or 8 specifically positioned oligonucleotides. When assembled into crystalline superlattices with AuNPs, we find that the distribution of DNA modifications modulates the favored structure: βgal with uniformly distributed DNA bonding elements results in body-centered cubic crystals, whereas DNA functionalization of cysteines results in AB 2 packing. We probe the role of protein oligonucleotide number and conjugate size on this observation, which revealed the importance of oligonucleotide distribution and number in this observed assembly behavior. These results indicate that proteins with defined DNA-modification patterns are powerful tools to control the nanoparticle superlattices architecture, and establish the importance of oligonucleotide distribution in the assembly behavior of protein-DNA conjugates.

  8. Band structure of ABC-trilayer graphene superlattice

    International Nuclear Information System (INIS)

    Uddin, Salah; Chan, K. S.

    2014-01-01

    We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k y direction for k x  = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case

  9. Ordered quantum-ring chains grown on a quantum-dot superlattice template

    International Nuclear Information System (INIS)

    Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

    2012-01-01

    One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

  10. Structure of highly perfect semiconductor strained-layer superlattices

    International Nuclear Information System (INIS)

    Vandenberg, J.M.

    1989-01-01

    High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

  11. Electronic band structure of magnetic bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C. Huy; Nguyen, T. Thuong; Nguyen, V. Lien

    2014-01-01

    Electronic band structure of the bilayer graphene superlattices with δ-function magnetic barriers and zero average magnetic flux is studied within the four-band continuum model, using the transfer matrix method. The periodic magnetic potential effects on the zero-energy touching point between the lowest conduction and the highest valence minibands of pristine bilayer graphene are exactly analyzed. Magnetic potential is shown also to generate the finite-energy touching points between higher minibands at the edges of Brillouin zone. The positions of these points and the related dispersions are determined in the case of symmetric potentials.

  12. Fine structure of the exciton electroabsorption in semiconductor superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Monozon, B.S., E-mail: borismonozon@mail.ru [Physics Department, Marine Technical University, 3 Lotsmanskaya Str., 190008 St.Petersburg (Russian Federation); Schmelcher, P. [Zentrum für Optische Quantentechnologien, The Hamburg Centre for Ultrafast Imaging, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg (Germany)

    2017-02-15

    Wannier-Mott excitons in a semiconductor layered superlattice (SL) are investigated analytically for the case that the period of the superlattice is much smaller than the 2D exciton Bohr radius. Additionally we assume the presence of a longitudinal external static electric field directed parallel to the SL axis. The exciton states and the optical absorption coefficient are derived in the tight-binding and adiabatic approximations. Strong and weak electric fields providing spatially localized and extended electron and hole states, respectively, are studied. The dependencies of the exciton states and the exciton absorption spectrum on the SL parameters and the electric field strength are presented in an explicit form. We focus on the fine structure of the ground quasi-2D exciton level formed by the series of closely spaced energy levels adjacent from the high frequencies. These levels are related to the adiabatically slow relative exciton longitudinal motion governed by the potential formed by the in-plane exciton state. It is shown that the external electric fields compress the fine structure energy levels, decrease the intensities of the corresponding optical peaks and increase the exciton binding energy. A possible experimental study of the fine structure of the exciton electroabsorption is discussed.

  13. Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

    International Nuclear Information System (INIS)

    Yang, G.; Lee, S.; Furdyna, J. K.

    2000-01-01

    This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

  14. Deep levels in as-grown and Si-implanted In(0.2)Ga(0.8)As-GaAs strained-layer superlattice optical guiding structures

    Science.gov (United States)

    Dhar, S.; Das, U.; Bhattacharya, P. K.

    1986-01-01

    Trap levels in about 2-micron In(0.2)Ga(0.8)As(94 A)/GaAs(25 A) strained-layer superlattices, suitable for optical waveguides, have been identified and characterized by deep-level transient spectroscopy and optical deep-level transient spectroscopy measurements. Several dominant electron and hole traps with concentrations of approximately 10 to the 14th/cu cm, and thermal ionization energies Delta-E(T) varying from 0.20 to 0.75 eV have been detected. Except for a 0.20-eV electron trap, which might be present in the In(0.2)Ga(0.8)As well regions, all the other traps have characteristics similar to those identified in molecular-beam epitaxial GaAs. Of these, a 0.42-eV hole trap is believed to originate from Cu impurities, and the others are probably related to native defects. Upon Si implantation and halogen lamp annealing, new deep centers are created. These are electron traps with Delta-E(T) = 0.81 eV and hole traps with Delta-E(T) = 0.46 eV. Traps occurring at room temperature may present limitations for optical devices.

  15. Laser induced structural transformation in chalcogenide based superlattices

    International Nuclear Information System (INIS)

    Zallo, Eugenio; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella

    2016-01-01

    Superlattices made of alternating layers of nominal GeTe and Sb 2 Te 3 have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

  16. Laser induced structural transformation in chalcogenide based superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Zallo, Eugenio, E-mail: zallo@pdi-berlin.de; Wang, Ruining; Bragaglia, Valeria; Calarco, Raffaella [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2016-05-30

    Superlattices made of alternating layers of nominal GeTe and Sb{sub 2}Te{sub 3} have been studied by micro-Raman spectroscopy. A structural irreversible transformation into ordered GeSbTe alloy is induced by high power laser light exposure. The intensity ratio of anti-Stokes and Stokes scattering under laser illumination gives a maximum average temperature in the sample of 177 °C. The latter is lower than the growth temperature and of 400 °C necessary by annealing to transform the structure in a GeSbTe alloy. The absence of this configuration after in situ annealing even up to 300 °C evidences an electronic excitation induced-transition which brings the system into a different and stable crystalline state.

  17. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jilili, Jiwuer

    2016-07-13

    Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

  18. Epitaxial (100)-oriented Mo/V superlattice grown on MgO(100) by dcMS and HiPIMS

    International Nuclear Information System (INIS)

    Shayestehaminzadeh, S.; Magnusson, R.L.; Gislason, H.P.; Olafsson, S.

    2013-01-01

    Epitaxial (100)-oriented Mo/V superlattices have been grown by High Power Impulse Magnetron Sputtering (HiPIMS) and dc Magnetron Sputtering (dcMS) on single-crystalline MgO(100) substrates at growth temperatures ranging from 30 °C to 600 °C. Superlattice bilayer period of Mo/V around 12/12 monolayers and 15 repeat periods was studied. This study aims to investigate the effect of the HiPIMS process on reducing the growth temperature of Mo/V superlattices using the high energy ionized Mo, V species in the HiPIMS plasma. In one case, the Mo layer was only grown with the HiPIMS process and V layer grown using the dcMS process while in another both layers were grown with the HiPIMS process. The as-deposited films were characterized by X-ray reflection and diffraction techniques. The dcMS process was found to give superior superlattice growth at high growth temperatures while a mixed Mo HiPIMS and V dcMS process gives better result at lower growth temperatures (300 °C). Room temperature growth reveals that neither the mixed Mo HiPIMS and V dcMS process nor the pure HiPIMS for both materials can produce better result compared to the pure dcMS process, which gives a relatively better result. - Highlights: • Epitaxial (100)-oriented Mo/V superlattices have been grown by HiPIMS and dcMS on MgO(100) for various temperatures. • The study was aimed to investigate the effect of ionized HiPIMS process onlowering the growth temperature. • The dcMS process was found to give superior superlattice growth at high growth temperature. • The mixed Mo HiPIMS and V dcMS process gives best result at lower growth temperatures

  19. Rutile IrO2/TiO2 superlattices: A hyperconnected analog to the Ruddelsden-Popper structure

    Science.gov (United States)

    Kawasaki, Jason K.; Baek, David; Paik, Hanjong; Nair, Hari P.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

    2018-05-01

    Dimensionality and connectivity among octahedra play important roles in determining the properties, electronic structure, and phase transitions of transition-metal oxides. Here we demonstrate the epitaxial growth of (110)-oriented alternating layers of IrO2 and TiO2, both of which have the rutile structure. These (IrO2)n/(TiO2)2 superlattices consist of IrO6 and TiO6 octahedra tiled in a hyperconnected, edge- and corner-sharing network. Despite the large lattice mismatch between constituent layers (Δ d∥=-2.1 % and Δ c =+6.6 % ), our reactive molecular-beam epitaxy-grown superlattices show high structural quality as determined by x-ray diffraction and sharp interfaces as observed by transmission electron microscopy. The large strain at the interface is accommodated by an ordered interfacial reconstruction. The superlattices show persistent metallicity down to n =3 atomic layers, and angle-resolved photoemission spectroscopy measurements reveal quantized sub-bands with signatures of IrO2-IrO2 interlayer coupling.

  20. Electronic properties of a new structured Sin/O superlattice

    Directory of Open Access Journals (Sweden)

    S. Yu

    2016-11-01

    Full Text Available Silicon is a material which dominants the semiconductor industry and has a well-established processing technology based on it. However, silicon has an indirect-bandgap and is not efficient in light emitting. This limits its applications in optoelectronics. In this paper, we proposed a new structural model for the silicon-based superlattice, i.e., the Sin/O one. The model consists of alternating films of n-layers of Si and a monolayer of oxygen along z-direction, together with a surface cell of Si(001 (2×1 reconstruction in the x-y plane. The importance of employing such a Si(001 (2×1 reconstruction is that all the electrons at interface can be strongly bonded. Our results showed interesting electronic properties, e.g., the band folding and large band gap of bulk Si, when the thickness of the silicon layers was increased (but still thin. Our structure might also offer other interesting properties.

  1. Thermoelectric power of Bi and Bi{sub 1{minus}x}Sb{sub x} alloy thin films and superlattices grown by MBE

    Energy Technology Data Exchange (ETDEWEB)

    Cho, S; DiVenere, A; Wong, G K; Ketterson, J B; Meyer, J R; Hoffman, C A

    1997-07-01

    The authors have measured the thermoelectric power (TEP) of MBE-grown epitaxial Bi and Bi{sub 1{minus}x} alloy thin films and superlattices as a function of temperature in the range 20--300 K. They have observed that the TEP of a Bi thin film of 1 {micro}m thickness is in good agreement with the bulk single crystal value and that the TEPs for superlattices with 400 {angstrom} and 800 {angstrom} Bi well thicknesses are enhanced over the bulk values. For x = 0.072 and 0.088 in Bi{sub 1{minus}x}Sb{sub x} thin films showing semiconducting behavior, TEP enhancement was observed by a factor of two. However as Bi or Bi{sub 1{minus}x}Sb{sub x} well thickness decreases in superlattice geometry, the TEP decreases, which may be due to unintentional p-type doping.

  2. Structural, electrical and luminescent characteristics of ultraviolet light emitting structures grown by hydride vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    A.Y. Polyakov

    2017-03-01

    Full Text Available Electrical and luminescent properties of near-UV light emitting diode structures (LEDs prepared by hydride vapor phase epitaxy (HVPE were studied. Variations in photoluminescence and electroluminescence efficiency observed for LEDs grown under nominally similar conditions could be attributed to the difference in the structural quality (dislocation density, density of dislocations agglomerates of the GaN active layers, to the difference in strain relaxation achieved by growth of AlGaN/AlGaN superlattice and to the presence of current leakage channels in current confining AlGaN layers of the double heterostructure.

  3. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    International Nuclear Information System (INIS)

    Tynell, Tommi; Karppinen, Maarit

    2014-01-01

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

  4. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

    2014-01-31

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

  5. Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors

    International Nuclear Information System (INIS)

    Blumers, Mathias

    2012-01-01

    The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S 2 .σ/k, where S is the Seebeck-coefficient, σ is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb 1-x Sr x Te and Bi 2 (Se x Te 1-x ) 3 , respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, σ and κ parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,σ,κ) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

  6. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

    Science.gov (United States)

    Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

    2018-06-01

    Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

  7. Characterization of band structure for transverse acoustic phonons in Fibonacci superlattices by a bandedge formalism

    International Nuclear Information System (INIS)

    Hsueh, W J; Chen, R F; Tang, K Y

    2008-01-01

    We present a divergence-free method to determine the characteristics of band structures and projected band structures of transverse acoustic phonons in Fibonacci superlattices. A set of bandedge equations is formulated to solve the band structures for the phonon instead of using the traditional dispersion relation. Numerical calculations show band structures calculated by the present method for the Fibonacci superlattice without numerical instability, which may occur in traditional methods. Based on the present formalism, the band structure for the acoustic phonons has been characterized by closure points and the projected bandgaps of the forbidden bands. The projected bandgaps are determined by the projected band structure, which is characterized by the cross points of the projected bandedges. We observed that the band structure and projected band structure and their characteristics were quite different for different generation orders and the basic layers for the Fibonacci superlattice. In this study, concise rules to determine these characteristics of the band structure and the projected band structure, including the number and the location of closure points of forbidden bands and those of projected bandgaps, in Fibonacci superlattices with arbitrary generation order and basic layers are proposed.

  8. Formation of uniform magnetic structures and epitaxial hydride phases in Nd/Pr superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Bryn-Jacobsen, C.; McMorrow, D.F.

    1997-01-01

    , and that the stacking sequence is coherent over many bilayer repeats. The neutron measurements show that for the hexagonal sites of the dhcp structure, the Nd magnetic order propagates coherently through the Pr, whereas the order on the cubic sites is either suppressed or confined to single Nd blocks. It is also shown...... that the singlet ground state of Pr is perturbed to produce a local moment on the hexagonal sites, so that in some cases there is a uniform magnetic structure throughout the superlattice. These results cast new light on the theory of magnetic interactions in rare-earth superlattices. Within a few months of growth...

  9. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  10. Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

    NARCIS (Netherlands)

    Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

    2016-01-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

  11. Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

    NARCIS (Netherlands)

    Casarin, B.; Caretta, A.; Momand, J.; Kooi, B. J.; Verheijen, M.A.; Bragaglia, V.; Calarco, R.; Chukalina, M.; Yu, X.; Robertson, J.; Lange, F.R.L.; Wuttig, M.; Redaelli, A.; Varesi, E.; Parmigiani, F.; Malvestuto, M.

    2016-01-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

  12. InN/GaN Superlattices: Band Structures and Their Pressure Dependence

    DEFF Research Database (Denmark)

    Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

    2013-01-01

    Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

  13. Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Luna, E.; Satpati, B.; Trampert, A.; Rodriguez, J. B.; Baranov, A. N.; Tournie, E.

    2010-01-01

    The unique properties of the noncommon-atom InAs/GaSb short-period-superlattices (SPSL) strongly depend on the interface structure. These interfaces are characterized using transmission electron microscopy (TEM). The compositional sharpness is obtained from the comparison of the experimental contrast in g 002 two-beam dark-field TEM images with simulated intensity profiles, which are calculated assuming that the element distribution profiles are described by sigmoidal functions. The interfacial intermixing, defined by the chemical width, is obtained for SPSL with different periods and layer thicknesses, even in the extreme case of nominally less than 3 ML thick InAs layers. Nominal 1 ML InSb layers intentionally inserted are also identified.

  14. Charge superlattice effects on the electronic structure of a model acceptor graphite intercalation compound

    International Nuclear Information System (INIS)

    Campagnoli, G.; Tosatti, E.

    1981-08-01

    In the present attempt we have considered a model ordered situation (a super-superlattice) where starting from a basic stoichiometry C 8 X, a fraction 1/3 of the molecules acquire one electron, the remaining 2/3 being left neutral. We have performed an electronic structure calculation using tight-binding plus electrostatic (Hartree) self-consistency

  15. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2012-01-01

    InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

  16. Valley-chiral quantum Hall state in graphene superlattice structure

    Science.gov (United States)

    Tian, H. Y.; Tao, W. W.; Wang, J.; Cui, Y. H.; Xu, N.; Huang, B. B.; Luo, G. X.; Hao, Y. H.

    2016-05-01

    We theoretically investigate the quantum Hall effect in a graphene superlattice (GS) system, in which the two valleys of graphene are coupled together. In the presence of a perpendicular magnetic field, an ordinary quantum Hall effect is found with the sequence σxy=ν e^2/h(ν=0,+/-1,+/-2,\\cdots) . At the zeroth Hall platform, a valley-chiral Hall state stemming from the single K or K' valley is found and it is localized only on one sample boundary contributing to the longitudinal conductance but not to the Hall conductivity. Our findings may shed light on the graphene-based valleytronics applications.

  17. Ordered patterns and structures via interfacial self-assembly: superlattices, honeycomb structures and coffee rings.

    Science.gov (United States)

    Ma, Hongmin; Hao, Jingcheng

    2011-11-01

    Self-assembly is now being intensively studied in chemistry, physics, biology, and materials engineering and has become an important "bottom-up" approach to create intriguing structures for different applications. Self-assembly is not only a practical approach for creating a variety of nanostructures, but also shows great superiority in building hierarchical structures with orders on different length scales. The early work in self-assembly focused on molecular self-assembly in bulk solution, including the resultant dye aggregates, liposomes, vesicles, liquid crystals, gels and so on. Interfacial self-assembly has been a great concern over the last two decades, largely because of the unique and ingenious roles of this method for constructing materials at interfaces, such as self-assembled monolayers, Langmuir-Blodgett films, and capsules. Nanocrystal superlattices, honeycomb films and coffee rings are intriguing structural materials with more complex features and can be prepared by interfacial self-assembly on different length scales. In this critical review, we outline the recent development in the preparation and application of colloidal nanocrystal superlattices, honeycomb-patterned macroporous structures by the breath figure method, and coffee-ring-like patterns (247 references). This journal is © The Royal Society of Chemistry 2011

  18. LSMO-STO(110) multilayered structure grown by metalorganic aerosol deposition

    International Nuclear Information System (INIS)

    Sapoval, Oleg; Belenchuk, Alexander; Canter, Valeriu; Zasavitsky, Efim; Moshnyaga, Vasily

    2013-01-01

    La 0.67 Sr 0.33 MnO 3 -SrTiO 3 multilayered structure was grown on SrTiO 3 (110) substrates by metalorganic aerosol deposition technique. The crystal structure was examined by X-ray analysis including simulation of diffraction and reflection patterns. The magneto transport properties of superlattice are presented. The critical thickness of (110)-oriented LSMO layers is lower than 7 perovskite unite cells. The oxygen stoichiometry provided due to high gas pressure conditions is responsible for reducing of critical thickness of LSMO layers at LSMO-STO(110) interfaces. (authors)

  19. Characterization by Raman scattering, x-ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy

    DEFF Research Database (Denmark)

    Bradshaw, J.; Song, X.J.; Shealy, J.R.

    1992-01-01

    We report growth of (InAs)1(AlAs)1 and (InAs)2(AlAs)2 strained layer superlattices by migration enhanced epitaxy. The samples were grown on InP (001) substrates and characterized by Raman spectroscopy, x-ray diffraction, and transmission electron microscopy. Satellite peaks in the x-ray data...... confirm the intended periodicity and indicate the presence of some disorder in the monolayer sample. The energies of the zone folded and quantum confined optic phonons are in reasonable agreement with calculations based on one-dimensional elastic continuum and linear chain models. Journal of Applied...

  20. Structural simulation of superlattices in lithium aluminates; Simulacion estructural de superredes en aluminatos de litio

    Energy Technology Data Exchange (ETDEWEB)

    Carrera G, L.M.; Basurto S, R. [Instituto Nacional de Investigaciones Nucleares, A.P. 18-1027, 11801 Mexico D.F. (Mexico)

    1997-07-01

    Among the materials to be used on the tritium generator cover of the future fusion reactors the lithium aluminate ({gamma} - LiAlO{sub 2}) is one of the more studied. In this work it is presented the superlattice structural simulation that presents to {gamma} - LiAlO{sub 2} as main phase and to {alpha} - LiAlO{sub 2} as the secondary phase. The simulation is developed considering that as the two phases present different symmetry ({gamma} - LiAlO{sub 2} is tetrahedral and {alpha} - LiAlO{sub 2} is hexahedral) it is had a superlattice LUCS type (Layered Ultrathin Coherent Structure) that is it presents an structure in coherent ultrathin layers since it is what implicates a lesser energy of formation. (Author)

  1. Stability and electronic structure of superlattices (IIIV)n/(IV2)n

    International Nuclear Information System (INIS)

    Casagrande, D.; Ferraz, A.C.

    1996-01-01

    Theoretical investigations of atomic relaxation and electronic states have been made for ultrathin superlattices (GaP) n /(Ge 2 ) n , (GaP) n /(Si 2 ) n , (In P) n /(Ge 2 ) n and (In P) n /(Si 2 ) n with period n ≤ 3 in growth directions (001) and (110). The calculations were performed within the momentum-space formalism of the self-consistent ab-initio pseudopotential method and the molecular dynamics approach as proposed by Car and Parrinello. The structures were found to be unstable with respect to the phase separation into the constituent bulk materials. The results for the enthalpy show a metastability as increasing the superlattice period n. The density of nonoctet wrong-bonds play an important role to determine the stability of the structures. (author). 13 refs., 2 figs., 3 tabs

  2. Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

    International Nuclear Information System (INIS)

    Lutsenko, Vadym G.

    2008-01-01

    Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

  3. Electronic structure and optical properties of (BeTen/(ZnSem superlattices

    Directory of Open Access Journals (Sweden)

    Caid M.

    2016-03-01

    Full Text Available The structural, electronic and optical properties of (BeTen/(ZnSem superlattices have been computationally evaluated for different configurations with m = n and m≠n using the full-potential linear muffin-tin method. The exchange and correlation potentials are treated by the local density approximation (LDA. The ground state properties of (BeTen/(ZnSem binary compounds are determined and compared with the available data. It is found that the superlattice band gaps vary depending on the layers used. The optical constants, including the dielectric function ε(ω, the refractive index n(ω and the refractivity R(ω, are calculated for radiation energies up to 35 eV.

  4. Strain distribution and band structure of InAs/GaAs quantum ring superlattice

    Science.gov (United States)

    Mughnetsyan, Vram; Kirakosyan, Albert

    2017-12-01

    The elastic strain distribution and the band structure of InAs/GaAs one-layer quantum ring superlattice with square symmetry has been considered in this work. The Green's function formalism based on the method of inclusions has been implied to calculate the components of the strain tensor, while the combination of Green's function method with the Fourier transformation to momentum space in Pikus-Bir Hamiltonian has been used for obtaining the miniband energy dispersion surfaces via the exact diagonalization procedure. The dependencies of the strain tensor components on spatial coordinates are compared with ones for single quantum ring and are in good agreement with previously obtained results for cylindrical quantum disks. It is shown that strain significantly affects the miniband structure of the superlattice and has contribution to the degeneracy lifting effect due to heavy hole-light hole coupling. The demonstrated method is simple and provides reasonable results for comparatively small Hamiltonian matrix. The obtained results may be useful for further investigation and construction of novel devices based on quantum ring superlattices.

  5. GaSb and GaSb/AlSb Superlattice Buffer Layers for High-Quality Photodiodes Grown on Commercial GaAs and Si Substrates

    Science.gov (United States)

    Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H. Y.; Araújo, D.

    2018-05-01

    The objective of this work is the integration of InGaAs/GaSb/GaAs heterostructures, with high indium content, on GaAs and Si commercial wafers. The design of an interfacial misfit dislocation array, either on GaAs or Si substrates, allowed growth of strain-free devices. The growth of purposely designed superlattices with their active region free of extended defects on both GaAs and Si substrates is demonstrated. Transmission electron microscopy technique is used for the structural characterization and plastic relaxation study. In the first case, on GaAs substrates, the presence of dopants was demonstrated to reduce several times the threading dislocation density through a strain-hardening mechanism avoiding dislocation interactions, while in the second case, on Si substrates, similar reduction of dislocation interactions is obtained using an AlSb/GaSb superlattice. The latter is shown to redistribute spatially the interfacial misfit dislocation array to reduce dislocation interactions.

  6. Sodium effect on self-organization of amphiphilic carboxylates: formation of structured micelles and superlattices.

    Science.gov (United States)

    Rosenlehner, Karin; Schade, Boris; Böttcher, Christoph; Jäger, Christof M; Clark, Timothy; Heinemann, Frank W; Hirsch, Andreas

    2010-08-16

    Not only the self-aggregation of dendritic polycarboxylates into structurally persistent micelles, but also that of the micelles themselves into superlattices is controlled by alkali-metal counterions and shows a pronounced sodium effect. Our combined experimental and computational work has revealed the formation of superlattices for the first time. The behavior of a variety of amphiphilic carboxylates and the different effects of the alkali cations Li(+), Na(+), and K(+) have been investigated by conductivity measurements, cryogenic transmission electron microscopy (cryo-TEM), and molecular-dynamics (MD) simulations. Together, these show that sodium salts of the amphiphiles give the most stable micelles, followed by lithium and potassium. Our results suggest that ion multiplets in bridging positions, rather than contact ion pairs, are responsible for the enhanced stability and the formation of hexagonally ordered superlattices with sodium counterions. Potassium ions do not form such ion multiplets and cannot therefore induce aggregation of the micelles. This sodium effect has far-reaching consequences for a large number of biological and technical systems and sheds new light on the origin of specific-ion effects.

  7. Passive high-frequency devices based on superlattice ferromagnetic nanowires

    International Nuclear Information System (INIS)

    Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

    2007-01-01

    In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

  8. Raman Scattering analysis of InGaAs and AlGaAs superlattices grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Oeztuerk, N.; Bahceli, S.

    2010-01-01

    InGaAs/GaAs and AlGaAs/GaAs multiple quantum well structures were grown by molecular beam epitaxy and investigated by X-ray diffraction and micro Raman spectroscopy. Phonon modes are investigated in backscattering from (001) surface. In the measured micro Raman spectrum for both structure, phonon peaks can be resolved for GaAs. These are longitudinal optical (LO) mode at 293 cm - 1 and 294 cm - 1 for InGaAs and AlGaAs, respectively.

  9. Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw

    2016-06-15

    This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.

  10. A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

    Science.gov (United States)

    Goradia, Chandra; Clark, Ralph; Brinker, David

    1985-01-01

    A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

  11. Scanning tunneling microscope observation and magnetic anisotropy of molecular beam epitaxy-grown Fe/Pt superlattices with (111) and (001) orientations

    International Nuclear Information System (INIS)

    Yamamoto, S.; Kato, T.; Iwata, S.; Tsunashima, S.; Uchiyama, S.

    2004-01-01

    The surface morphology and the perpendicular magnetic anisotropy for (001) and (111) oriented [Pt(nML)/Fe(nML)] 10 superlattices were investigated. From in situ scanning tunneling microscope observation, the small grain whose diameter was about 5-10 nm and height was 0.2-0.4 nm, was observed in the Fe(2 ML) surface grown at room temperature on the Pt(111) seed layer, while the surface of the Fe deposited at 150 deg. C was covered with flat terraces and steps. It is found that the (111) oriented films were all in-plane magnetized. On the other hand, the (001) films were in-plane magnetized at room temperature, perpendicular magnetized at 100 deg. C and 150 deg. C

  12. Electronic structure modeling of InAs/GaSb superlattices with hybrid density functional theory

    Energy Technology Data Exchange (ETDEWEB)

    Garwood, Tristan [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials; Modine, Normand A. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Krishna, S. [Univ. of New Mexico, Albuquerque, NM (United States). Center for High Technology Materials

    2016-12-18

    The application of first-principles calculations holds promise for greatly improving our understanding of semiconductor superlattices. By developing a procedure to accurately predict band gaps using hybrid density functional theory, it lays the groundwork for future studies investigating more nuanced properties of these structures. Our approach allows a priori prediction of the properties of SLS structures using only the band gaps of the constituent materials. Furthermore, it should enable direct investigation of the effects of interface structure, e.g., intermixing or ordering at the interface, on SLS properties. In this paper, we present band gap data for various InAs/GaSb type-II superlattice structures calculated using the generalized Kohn-Sham formulation of density functional theory. A PBE0-type hybrid functional was used, and the portion of the exact exchange was tuned to fit the band gaps of the binary compounds InAs and GaSb with the best agreement to bulk experimental values obtained with 18% of the exact exchange. The heterostructures considered in this study are 6 monolayer (ML) InAs/6 ML GaSb, 8 ML InAs/8 ML GaSb and 10 ML InAs/10 ML GaSb with deviations from the experimental band gaps ranging from 3% to 11%.

  13. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jiwuer, Jilili

    2016-01-01

    Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors

  14. Coherent magnetic structures in terbium/holmium superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    to 230 K, two samples retain this magnetic structure while the third undergoes a transition first to a mixed phase of helically and ferromagnetically ordered Tb moments, then to a phase with only helically ordered To moments. Ln all cases, the magnetic ordering is found to be long ranged, with coherence...

  15. Superlattice band structure: New and simple energy quantification condition

    Energy Technology Data Exchange (ETDEWEB)

    Maiz, F., E-mail: fethimaiz@gmail.com [University of Cartage, Nabeul Engineering Preparatory Institute, Merazka, 8000 Nabeul (Tunisia); King Khalid University, Faculty of Science, Physics Department, P.O. Box 9004, Abha 61413 (Saudi Arabia)

    2014-10-01

    Assuming an approximated effective mass and using Bastard's boundary conditions, a simple method is used to calculate the subband structure for periodic semiconducting heterostructures. Our method consists to derive and solve the energy quantification condition (EQC), this is a simple real equation, composed of trigonometric and hyperbolic functions, and does not need any programming effort or sophistic machine to solve it. For less than ten wells heterostructures, we have derived and simplified the energy quantification conditions. The subband is build point by point; each point presents an energy level. Our simple energy quantification condition is used to calculate the subband structure of the GaAs/Ga{sub 0.5}Al{sub 0.5}As heterostructures, and build its subband point by point for 4 and 20 wells. Our finding shows a good agreement with previously published results.

  16. Superlattices in thermoelectric applications

    International Nuclear Information System (INIS)

    Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN

    1994-08-01

    The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure

  17. Small Structures and Superlattices for Future High-Speed Devices

    Science.gov (United States)

    1986-10-01

    1985. I-5oA -undoped) [101 M. Ogawa. K. Olsata. T. Fu-usuka. and N. Kawamura . IEEE M-GoAt 1ND) _ -OSP~m Mricrowave Thie.ory Tech., vol. MTT-24, p. 3013...thicknesses range between (T.E.S.) from GTE. We also wish to thank Masako Okamoto 250 and 600 A. Forward I-V measurements that we have and Professor W. M...orientation mixed in among one of us (T.E.S.) from GTE. We also wish to thank Masako the type-B structure. This possibility is discounted by our Okamoto

  18. Touching points in the energy band structure of bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C Huy; Nguyen, V Lien

    2014-01-01

    The energy band structure of the bilayer graphene superlattices with zero-averaged periodic δ-function potentials are studied within the four-band continuum model. Using the transfer matrix method, the study is mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows a Dirac-like double-cone shape with the group velocity which is periodic in the potential strength P with the period of π and becomes anisotropic at relatively large P. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity which demonstrates a manifestation of the touching points examined. (paper)

  19. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure

    Science.gov (United States)

    Kanouni, F.; Brezini, A.; Djenane, M.; Zou, Q.

    2018-03-01

    We have theoretically investigated the electron energy spectra and surface states energy in the three dimensionally ordered quantum dot superlattices (QDSLs) made of InN and GaN semiconductors. The QDSL is assumed in this model to be a matrix of GaN containing cubic dots of InN of the same size and uniformly distributed. For the miniband’s structure calculation, the resolution of the effective mass Schrödinger equation is done by decoupling it in the three directions within the framework of Kronig-Penney model. We found that the electrons minibands in infinite ODSLs are clearly different from those in the conventional quantum-well superlattices. The electrons localization and charge-carrier states are very dependent on the quasicrystallographic directions, the size and the shape of the dots which play a role of the artificial atoms in such QD supracrystal. The energy spectrum of the electron states localized at the surface of InN/GaN QDSL is represented by Kronig-Penney like-model, calculated via direct matching procedure. The calculation results show that the substrate breaks symmetrical shape of QDSL on which some localized electronic surface states can be produced in minigap regions. Furthermore, we have noticed that the surface states degeneracy is achieved in like very thin bands located in the minigaps, identified by different quantum numbers nx, ny, nz. Moreover, the surface energy bands split due to the reduction of the symmetry of the QDSL in z-direction.

  20. Characterization of the Nb-B superlattice system

    Energy Technology Data Exchange (ETDEWEB)

    Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J., E-mail: jguimpel@cab.cnea.gov.ar

    2016-12-15

    Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

  1. Characterization of the Nb-B superlattice system

    International Nuclear Information System (INIS)

    Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J.

    2016-01-01

    Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

  2. Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

    Science.gov (United States)

    Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

    2017-07-01

    The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

  3. On the structure of the incommensurate superlattices of 2H - TaSe2

    International Nuclear Information System (INIS)

    Withers, R.L.; Bursill, L.A.

    1979-01-01

    Reinterpretation of the neutron diffraction study of 2H-TaSe 2 by Moncton, Axe and DiSalvo (1977) reveals an ambiguity in the sense of the displacements proposed for the commensurate superlattice structure. An attempt is made to resolve this ambiguity by electrostatic and short-range energy calculations of the phase dependence of the energy of the periodic structural distortion wave. There is a fine balance between Se-Se short range repulsion, Ta-Se electrostatic and short-range repulsion and the CDW-Ta ion interaction energy terms. The analysis reveals the phase dependence of the various terms and allows the different contributions to the stability of the distortion waves to be discussed more completely than previously

  4. Magnetoresistance oscillations of two-dimensional electron systems in lateral superlattices with structured unit cells

    Science.gov (United States)

    Gerhardts, Rolf R.

    2015-11-01

    Model calculations for commensurability oscillations of the low-field magnetoresistance of two-dimensional electron systems (2DES) in lateral superlattices, consisting of unit cells with an internal structure, are compared with recent experiments. The relevant harmonics of the effective modulation potential depend not only on the geometrical structure of the modulated unit cell, but also strongly on the nature of the modulation. While higher harmonics of an electrostatically generated surface modulation are exponentially damped at the position of the 2DES about 90 nm below the surface, no such damping appears for strain-induced modulation generated, e.g., by the deposition of stripes of calixarene resist on the surface before cooling down the sample.

  5. Interface disorder and transport properties in HTC/CMR superlattices

    International Nuclear Information System (INIS)

    Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E.

    2004-01-01

    The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T c RBa 2 Cu 3 O 7 (RBCO) and colossal magnetoresistance La x A 1-x MnO 3 (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La 2/3 Ca 1/3 MnO 3 and GdBCO/La 0.6 Sr 0.04 MnO 3 superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness

  6. Interfacial Dirac cones from alternating topological invariant superlattice structures of Bi2Se3.

    Science.gov (United States)

    Song, Jung-Hwan; Jin, Hosub; Freeman, Arthur J

    2010-08-27

    When the three-dimensional topological insulators Bi2Se3 and Bi2Te3 have an interface with vacuum, i.e., a surface, they show remarkable features such as topologically protected and spin-momentum locked surface states. However, for practical applications, one often requires multiple interfaces or channels rather than a single surface. Here, for the first time, we show that an interfacial and ideal Dirac cone is realized by alternating band and topological insulators. The multichannel Dirac fermions from the superlattice structures open a new way for applications such as thermoelectric and spintronics devices. Indeed, utilizing the interfacial Dirac fermions, we also demonstrate the possible power factor improvement for thermoelectric applications.

  7. Optical absorption in planar graphene superlattice: The role of structural parameters

    Science.gov (United States)

    Azadi, L.; Shojaei, S.

    2018-04-01

    We theoretically studied the optically driven interband transitions in a planar graphene superlattices (PGSL) formed by patterning graphene sheet on laterally hetrostructured substrate as Sio2/hBN. A tunable optical transitions between minibands is observed based on engineering structural parameters. We derive analytically expression for optical absorption from two-band model. Considerable optical absorption is obtained for different ratios between widths of heterostructured substrate and is explained analytically from the view point of wavefunction engineering and miniband dispersion, in details. The role of different statuses of polarization as circular and linear are considered. Our study paves a way toward the control of optical properties of PGSLs to be implemented in optoelectronics devices.

  8. Ferromagnetic resonance study of structure and relaxation of magnetization in NiFe/Ru superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Alayo, W., E-mail: willian.rodriguez@ufpel.edu.br [Depto. de Física, Univ. Federal de Pelotas, Campus Universitário, 96010-900, Pelotas, RS (Brazil); Landi Jr, S. [Instituto Federal Goiano, Rio Verde 75901-970 (Brazil); Pelegrini, F. [Instituto de Física, Universidade Federal de Goiás, Goiânia 74001-970 (Brazil); Baggio-Saitovitch, E. [Centro Brasileiro de Pesquisas Físicas, Rio de Janeiro 22290-180 (Brazil)

    2014-01-15

    The structural properties and relaxation processes of magnetization in [Ni{sub 81}Fe{sub 19}(t{sub 1})/Ru(t{sub 2})]{sub N} superlattices (N=number of bilayers) were analyzed by ferromagnetic resonance (FMR) with a fixed microwave frequency. One series of samples was deposited with constant NiFe layer thickness (t{sub 1}) and variable Ru layer thickness (t{sub 2}); the other series, with constant t{sub 2} and variable t{sub 1}. A single FMR mode was observed for t{sub 2}<15 Å and t{sub 1}>75 Å and it has been attributed to the resonance of the exchange-coupled NiFe layers across the Ru interlayers. For the other values of t{sub 1} and t{sub 2}, several FMR modes appeared and they were associated to non-coupled magnetic phases with different effective magnetization formed during the multilayer growth. The FMR linewidths were analyzed as a function of the magnetic layer thickness and a strong dependence on t{sub 1}{sup −2} was observed. It was attributed to the contribution of the two-magnon scattering mechanism for the linewidth. - Highlights: • We present a study of magnetic properties of NiFe/Ru superlattices by ferromagnetic resonance (FMR). • The FMR spectra show several modes for large Ru thicknesses and for low NiFe thicknesses. • The above behavior is correlated with the interlayer exchange coupling. • The two-magnon scattering mechanism is revealed by the dependence of the FMR linewidth on the NiFe thickness.

  9. The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM Study.

    Science.gov (United States)

    Kuchuk, Andrian V; Kryvyi, Serhii; Lytvyn, Petro M; Li, Shibin; Kladko, Vasyl P; Ware, Morgan E; Mazur, Yuriy I; Safryuk, Nadiia V; Stanchu, Hryhorii V; Belyaev, Alexander E; Salamo, Gregory J

    2016-12-01

    Superlattices (SLs) consisting of symmetric layers of GaN and AlN have been investigated. Detailed X-ray diffraction and reflectivity measurements demonstrate that the relaxation of built-up strain in the films generally increases with an increasing number of repetitions; however, an apparent relaxation for subcritical thickness SLs is explained through the accumulation of Nagai tilt at each interface of the SL. Additional atomic force microscopy measurements reveal surface pit densities which appear to correlate with the amount of residual strain in the films along with the appearance of cracks for SLs which have exceeded the critical thickness for plastic relaxation. These results indicate a total SL thickness beyond which growth may be limited for the formation of high-quality coherent crystal structures; however, they may indicate a growth window for the reduction of threading dislocations by controlled relaxation of the epilayers.

  10. Structural, Dynamic, and Vibrational Properties during Heat Transfer in Si/Ge Superlattices: A Car-Parrinello Molecular Dynamics Study

    OpenAIRE

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2016-01-01

    The structural, dynamic, and vibrational properties during the heat transfer process in Si/Ge superlattices, are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) ar...

  11. Structural, chemical, and thermoelectric properties of Bi2Te3 Peltier materials. Bulk, thin films, and superlattices

    International Nuclear Information System (INIS)

    Peranio, Nicola

    2008-01-01

    In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi 2 Te 3 and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi 2 (Te 0.91 Se 0.09 ) 3 and p-type (Bi 0.26 Sb 0.74 ) 1.98 (Te 0.99 Se 0.01 ) 3.02 bulk materials synthesised by the Bridgman technique. (II) Bi 2 Te 3 thin films and Bi 2 Te 3 /Bi 2 (Te 0.88 Se 0.12 ) 3 superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF 2 substrates with periods of δ-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to and an amplitude of about 10 pm and (ii) a wave vector parallel to {1,0,10} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

  12. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  13. Superlattice structure of Ce{sup 3+}-doped BaMgF{sub 4} fluoride crystals - x-ray diffraction, electron spin-resonance, and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Yamaga, M.; Hattori, K. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu (Japan); Kodama, N. [Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University, Akita (Japan); Ishizawa, N. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai (Japan)

    2001-09-14

    The x-ray diffraction patterns for Ce{sup 3+}-doped BaMgF{sub 4} (BMF) crystals suggest the existence of superlattice structure. The superlattice model is consistent with the characterization of the 4f{sup 1} ground state of Ce{sup 3+} as a probe ion using the electron spin-resonance (ESR) technique. The distinct Ce{sup 3+} luminescence spectra with different peak energies and lifetimes also support the superlattice model. Although the detailed superlattice structure could not be analysed using the diffraction spots, a model has been proposed, taking into account the eight Ce{sup 3+} polyhedra with different anion coordinations in the unit cell of the BMF crystal obtained from the ESR experiments. (author)

  14. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Energy Technology Data Exchange (ETDEWEB)

    Ji, Pengfei; Zhang, Yuwen, E-mail: zhangyu@missouri.edu [Department of Mechanical and Aerospace Engineering, University of Missouri, Columbia, Missouri 65211 (United States); Yang, Mo [College of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China)

    2013-12-21

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  15. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    International Nuclear Information System (INIS)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-01-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective

  16. Structural, dynamic, and vibrational properties during heat transfer in Si/Ge superlattices: A Car-Parrinello molecular dynamics study

    Science.gov (United States)

    Ji, Pengfei; Zhang, Yuwen; Yang, Mo

    2013-12-01

    The structural, dynamic, and vibrational properties during heat transfer process in Si/Ge superlattices are studied by analyzing the trajectories generated by the ab initio Car-Parrinello molecular dynamics simulation. The radial distribution functions and mean square displacements are calculated and further discussions are made to explain and probe the structural changes relating to the heat transfer phenomenon. Furthermore, the vibrational density of states of the two layers (Si/Ge) are computed and plotted to analyze the contributions of phonons with different frequencies to the heat conduction. Coherent heat conduction of the low frequency phonons is found and their contributions to facilitate heat transfer are confirmed. The Car-Parrinello molecular dynamics simulation outputs in the work show reasonable thermophysical results of the thermal energy transport process and shed light on the potential applications of treating the heat transfer in the superlattices of semiconductor materials from a quantum mechanical molecular dynamics simulation perspective.

  17. Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

    Directory of Open Access Journals (Sweden)

    C. C. Fan

    2017-08-01

    Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

  18. Optical properties of InAs/GaAs quantum dot superlattice structures

    Science.gov (United States)

    Imran, Ali; Jiang, Jianliang; Eric, Deborah; Zahid, M. Noaman; Yousaf, M.; Shah, Z. H.

    2018-06-01

    Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm-1 and can be used for highly sensitive infrared detector and high efficiency solar cells.

  19. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001).

    Science.gov (United States)

    Li, Lianbi; Zang, Yuan; Hu, Jichao; Lin, Shenghuang; Chen, Zhiming

    2017-05-25

    The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm², the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm². Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  20. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001

    Directory of Open Access Journals (Sweden)

    Lianbi Li

    2017-05-01

    Full Text Available The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001 Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

  1. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

    Science.gov (United States)

    Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

    2012-01-30

    The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

  2. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2015-11-15

    Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  3. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Directory of Open Access Journals (Sweden)

    S. Kowarik

    2015-11-01

    Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  4. Electronic structure and transport on the surface of topological insulator attached to an electromagnetic superlattice

    International Nuclear Information System (INIS)

    Wang Haiyan; Chen Xiongwen; Zhou Xiaoying; Zhang Lebo; Zhou Guanghui

    2012-01-01

    We study the electronic structure and transport for Dirac electron on the surface of a three-dimensional (3D) topological insulator attached to an electromagnetic superlattice. It is found that, by means of the transfer-matrix method, the number of electronic tunneling channels for magnetic barriers in antiparallel alignment is larger than that in parallel alignment, which stems to the energy band structures. Interestingly, a remarkable semiconducting transport behavior appears in this system with a strong magnetic barrier due to low energy band nearly paralleling to the Fermi level. Consequently, there is only small incident angle transport in the higher energy region when the system is modulated mainly by the higher electric barriers. We further find that the spatial distribution of the spin polarization oscillates periodically in the incoming region, but it is almost in-plane with a fixed direction in the transmitting region. The results may provide a further understanding of the nature of 3D TI surface states, and may be useful in the design of topological insulator-based electronic devices such as collimating electron beam.

  5. Rare earth superlattices

    International Nuclear Information System (INIS)

    McMorrow, D.F.

    1997-01-01

    A review is given of recent experiments on the magnetism of rare earth superlattices. Early experiments in this field were concerned mainly with systems formed by combining a magnetic and a non-magnetic element in a superlattice structure. From results gathered on a variety of systems it has been established that the propagation of magnetic order through the non-magnetic spacer can be understood mostly on the basis of an RKKY-like model, where the strength and range of the coupling depends on the details of the conduction electron susceptibility of the spacer. Recent experiments on more complex systems indicate that this model does not provide a complete description. Examples include superlattices where the constituents can either be both magnetic, adopt different crystal structures (Fermi surfaces), or where one of the constituents has a non-magnetic singlet ground state. The results from such systems are presented and discussed in the context of the currently accepted model. (au)

  6. Structural Reliability of the Nigerian Grown Abura Timber Bridge ...

    African Journals Online (AJOL)

    Structural reliability analysis was carried out on the Nigerian grown Abura timber, to ascertain its structural performance as timber bridge beams. Samples of the Nigerian grown Abura timber were bought from timber market, seasoned naturally and their structural/strength properties were determined at a moisture content of ...

  7. Magnetism in lanthanide superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Sarthour, R.S.; McMorrow, D.F.

    2000-01-01

    Neutron diffraction studies of heavy rare-earth superlattices have revealed the stabilization of novel magnetic phases chat are not present in bulk materials. The most striking result is the propagation of the magnetic ordering through nonmagnetic spacer materials. Here we describe some recent X......-ray magnetic resonant scattering studies of light rare-earth superlattices, which illuminate the mechanism of interlayer coupling, and provide access to different areas of Physics. such as the interplay between superconductivity and magnetism. Magnetic X-ray diffraction is found to be particularly well suited...... to the study of the modulated magnetic structures in superlattices, and provides unique information on the conduction-electron spin-density wave responsible for the propagation of magnetic order. (C) 2000 Elsevier Science B.V. All rights reserved....

  8. Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD.

    Science.gov (United States)

    Xu, Peiqiang; Jiang, Yang; Chen, Yao; Ma, Ziguang; Wang, Xiaoli; Deng, Zhen; Li, Yan; Jia, Haiqiang; Wang, Wenxin; Chen, Hong

    2012-02-20

    GaN-based high-electron mobility transistors (HEMTs) with AlN/GaN super-lattices (SLs) (4 to 10 periods) as barriers were prepared on (0001) sapphire substrates. An innovative method of calculating the concentration of two-dimensional electron gas (2-DEG) was brought up when AlN/GaN SLs were used as barriers. With this method, the energy band structure of AlN/GaN SLs was analyzed, and it was found that the concentration of 2-DEG is related to the thickness of AlN barrier and the thickness of the period; however, it is independent of the total thickness of the AlN/GaN SLs. In addition, we consider that the sheet carrier concentration in every SL period is equivalent and the 2-DEG concentration measured by Hall effect is the average value in one SL period. The calculation result fitted well with the experimental data. So, we proposed that our method can be conveniently applied to calculate the 2-DEG concentration of HEMT with the AlN/GaN SL barrier.

  9. The Luttinger liquid in superlattice structures: atomic gases, quantum dots and the classical Ising chain

    International Nuclear Information System (INIS)

    Bhattacherjee, Aranya B; Jha, Pradip; Kumar, Tarun; Mohan, Man

    2011-01-01

    We study the physical properties of a Luttinger liquid in a superlattice that is characterized by alternating two tunneling parameters. Using the bosonization approach, we describe the corresponding Hubbard model by the equivalent Tomonaga-Luttinger model. We analyze the spin-charge separation and transport properties of the superlattice system. We suggest that cold Fermi gases trapped in a bichromatic optical lattice and coupled quantum dots offer the opportunity to measure these effects in a convenient manner. We also study the classical Ising chain with two tunneling parameters. We find that the classical two-point correlator decreases as the difference between the two tunneling parameters increases.

  10. Investigation of the structural and electronic properties of quantum well superlattices made of CuCl, CuBr and CuI

    International Nuclear Information System (INIS)

    Badi, F.; Louhibi, S.; Aced, M.R.; Mehnane, N.; Sekkal, N.

    2008-05-01

    This paper reports first principle investigations of structural and electronic properties of both bulk and superlattice (SL) systems of cuprous halides. The obtained structural data for bulks compares well with literature while data for SL is not compared because unavailable (to our knowledge). The electronic structure of bulks and also of (001) and (110) growth axis superlattices (SLs) are calculated and it is shown that at the reverse of the IV-IV and III-V systems, the (110) growth axis impacts the electronic structure which indicates a great influence of the d-orbital. (author)

  11. Enhancement in figure-of-merit with superlattices structures for thin-film thermoelectric devices

    Energy Technology Data Exchange (ETDEWEB)

    Venkatasubramanian, R; Colpitts, T

    1997-07-01

    Thin-film superlattice (SL) structures in thermoelectric materials are shown to be a promising approach to obtaining an enhanced figure-of-merit, ZT, compared to conventional, state-of-the-art bulk alloyed materials. In this paper the authors describe experimental results on Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures, relevant to thermoelectric cooling and power conversion, respectively. The short-period Bi{sub 2}Te{sub 3} and Si/Ge SL structures appear to indicate reduced thermal conductivities compared to alloys of these materials. From the observed behavior of thermal conductivity values in the Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} SL structures, a distinction is made where certain types of periodic structures may correspond to an ordered alloy rather than an SL, and therefore, do not offer a significant reduction in thermal conductivity values. The study also indicates that SL structures, with little or weak quantum-confinement, also offer an improvement in thermoelectric power factor over conventional alloys. They present power factor and electrical transport data in the plane of the SL interfaces to provide preliminary support for the arguments on reduced alloy scattering and impurity scattering in Bi{sub 2}Te{sub 3}/Sb{sub 2}Te{sub 3} and Si/Ge SL structures. These results, though tentative due to the possible role of the substrate and the developmental nature of the 3-{omega} method used to determine thermal conductivity values, suggest that the short-period SL structures potentially offer factorial improvements in the three-dimensional figure-of-merit (ZT3D) compared to current state-of-the-art bulk alloys. An approach to a thin-film thermoelectric device called a Bipolarity-Assembled, Series-Inter-Connected Thin-Film Thermoelectric Device (BASIC-TFTD) is introduced to take advantage of these thin-film SL structures.

  12. Magnetic rare earth superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Kwo, J.; Hong, M.

    1991-01-01

    Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...

  13. Thermal conductivity and heat transfer in superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Chen, G; Neagu, M; Borca-Tasciuc, T

    1997-07-01

    Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and devices based on quantum structures. This work reports progress on the modeling of thermal conductivity of superlattice structures. Results from the models established based on the Boltzmann transport equation could explain existing experimental results on the thermal conductivity of semiconductor superlattices in both in plane and cross-plane directions. These results suggest the possibility of engineering the interfaces to further reduce thermal conductivity of superlattice structures.

  14. Thermoelectric properties of thin film and superlattice structure of IV-VI and V-VI compound semiconductors; Thermoelektrische Eigenschaften duenner Schichten und Uebergitterstrukturen von IV-VI- und V-VI-Verbundhalbleitern

    Energy Technology Data Exchange (ETDEWEB)

    Blumers, Mathias

    2012-02-29

    The basic material property governing the efficiency of thermoelectric applications is the thermoelectric figure of merit Z=S{sup 2}.{sigma}/k, where S is the Seebeck-coefficient, {sigma} is the electrical conductivity and k the thermal conductivity. A promising concept of increasing Z by one and two dimensional quantum well superlattices (QW-SL) was introduced in the early 1990s in terms of theoretical predictions. The realization of such low dimensional systems is done by use of semiconductor compounds with different energy gaps. The ambition of the Nitherma project was to investigate the thermoelectric properties of superlattices and Multi-Quantum-Well-structures (MQW) made of Pb{sub 1-x}Sr{sub x}Te and Bi{sub 2}(Se{sub x}Te{sub 1-x}){sub 3}, respectively. Therefore SL- and MQW-structures of this materials were grown and Z was determined by measuring of S, {sigma} and {kappa} parallel to the layer planes. Aim of this thesis is the interpretation of the transport measurements (S,{sigma},{kappa}) of low dimensional structures and the improvement of preparation and measurement techniques. The influence of low dimensionality on the thermal conductivity in SL- and MQW-structures was investigated by measurements on structures with different layer thicknesses. In addition, measurements of the Seebeck-coefficient were performed, also to verify the results of the participating groups.

  15. Stimulated emission at 2.8 μm from Hg-based quantum well structures grown by photoassisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Giles, N.C.; Yang, Z.; Han, J.W.; Cook, J.W. Jr.; Schetzina, J.F.

    1990-01-01

    We report the first observation of stimulated emission from Hg-based quantum well structures in which the active region is a HgCdTe superlattice. The laser structures were grown on (100) CdZnTe substrates by photoassisted molecular beam epitaxy. Cleaved laser cavities were optically pumped using the 1.06 μm output from a continuous wave Nd:YAG laser. Stimulated emission cavity modes were seen at cw laser power densities as low as 3.4 kW/cm 2 and at temperatures ≥60 K

  16. Structural stability of coplanar 1T-2H superlattice MoS2 under high energy electron beam

    Science.gov (United States)

    Reshmi, S.; Akshaya, M. V.; Satpati, Biswarup; Basu, Palash Kumar; Bhattacharjee, K.

    2018-05-01

    Coplanar heterojunctions composed of van der Waals layered materials with different structural polymorphs have drawn immense interest recently due to low contact resistance and high carrier injection rate owing to low Schottky barrier height. Present research has largely focused on efficient exfoliation of these layered materials and their restacking to achieve better performances. We present here a microwave assisted easy, fast and efficient route to induce high concentration of metallic 1T phase in the original 2H matrix of exfoliated MoS2 layers and thus facilitating the formation of a 1T-2H coplanar superlattice phase. High resolution transmission electron microscopy (HRTEM) investigations reveal formation of highly crystalline 1T-2H hybridized structure with sharp interface and disclose the evidence of surface ripplocations within the same exfoliated layer of MoS2. In this work, the structural stability of 1T-2H superlattice phase during HRTEM measurements under an electron beam of energy 300 keV is reported. This structural stability could be either associated to the change in electronic configuration due to induction of the restacked hybridized phase with 1T- and 2H-regions or to the formation of the surface ripplocations. Surface ripplocations can act as an additional source of scattering centers to the electron beam and also it is possible that a pulse train of propagating ripplocations can sweep out the defects via interaction from specific areas of MoS2 sheets.

  17. Magnetic superlattices

    International Nuclear Information System (INIS)

    Kwo, J.; Hong, M.; McWhan, D.B.; Yafet, Y.; Fleming, R.M.; DiSalvo, F.J.; Waszczak, J.V.; Majkrzak, C.F.; Gibbs, D.; Goldmann, A.I.; Boni, P.; Bohr, J.; Grimm, H.; Bohr, J.; Chien, C.L.; Grimm, H.; Cable, J.W.

    1988-01-01

    Single crystal magnetic rare earth superlattices were synthesized by molecular beam epitaxy. The studies include four rare earth systems: Gd-Y, Dy-Y, Ho-Y, and Gd-Dy. The magnetic properties and the long-range spin order are reviewed in terms of the interfacial behavior, and the interlayer exchange coupling across Y medium

  18. Tuning the electronic structure of SrTiO3/SrFeO3−x superlattices via composition and vacancy control

    Directory of Open Access Journals (Sweden)

    Robert F. Berger

    2014-04-01

    Full Text Available Using density functional theory-based calculations, we explore the effects of oxygen vacancies and epitaxial layering on the atomic, magnetic, and electronic structure of (SrTiO3n(SrFeO3−x1 superlattices. While structures without oxygen vacancies (x = 0 possess small or non-existent band gaps and ferromagnetic ordering in their iron layers, those with large vacancy concentrations (x = 0.5 have much larger gaps and antiferromagnetic ordering. Though the computed gaps depend numerically on the delicate energetic balance of vacancy ordering and on the value of Hubbard U eff used in the calculations, we demonstrate that changes in layering can tune the band gaps of these superlattices below that of SrTiO3 (3.2 eV by raising their valence band maxima. This suggests the possibility that these superlattices could absorb in the solar spectrum, and could serve as water-splitting photocatalysts.

  19. Magnetism and superconductivity in neodymium/lanthanum superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Sarthour, R.S.; McMorrow, Desmond Francis

    1997-01-01

    bilayers. Magnetization studies reveal the onset of superconductivity at a temperature comparable to bulk DHCP La, and the results suggest coupling across the antiferromagnetic Nd layers. The magnetic structures, investigated using neutron diffraction techniques, resemble those found in bulk Nd....... For the cubic sites of the DHCP structure the magnetic order is confined to individual Nd blocks. However, the magnetic order on the Nd hexagonal sites propagates coherently through the La, even when it becomes superconducting. (C) 1998 Elsevier Science B.V. All rights reserved.......A single-crystal Nd30La10 superlattice grown using molecular beam epitaxy is found to consist of alternating antiferromagnetic and superconducting layers at low temperature. The superlattice has the DHCP crystal structure, and the stacking sequence of close-packed planes is coherent over many...

  20. New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

    International Nuclear Information System (INIS)

    Fong, C Y; Qian, M C

    2004-01-01

    The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

  1. Monolayer atomic crystal molecular superlattices

    Science.gov (United States)

    Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

    2018-03-01

    Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

  2. Determination of superlattice effect on metal–ceramic nano-structures

    Directory of Open Access Journals (Sweden)

    J.C. Caicedo

    2015-01-01

    Full Text Available Binary nitrides multilayer systems were grown on silicon (100 substrates with the aim to study the coherent assembly in HfN/VN material. Multilayers films were grown via reactive r.f. magnetron sputtering technique by systematically varying the bilayer period (Λ and the bilayer number (n while maintaining constant the total coating thickness (∼2.4 μm. The layers were characterized by high angle X-ray diffraction (HA-XRD, low angle X-ray diffraction (LA-XRD. HfN and VN layers were analyzed by X-ray photoelectron spectroscopy (XPS and electron and transmission microscopy (TEM. HA-XRD results showed preferential growth in the face-centered cubic (111 crystal structure for HfN/VN multilayer systems with the epitaxial relation (111 [100]HfN//(200 [100]VN. The maximum coherent assembly was observed with presence of satellite peaks. With this idea, ternary and binary nitrides films have been designed and deposited on Si (100 substrates with bilayer periods (Λ in a broad range, from nanometers to micrometers. The films were fabricated to study the structural evolution, coherent assembly progress and optical properties such as the critical angle, dispersion coefficient, index of refraction for HfN/VN multilayers with decreasing bilayer thickness.

  3. The effect of interfacial charge transfer on ferromagnetism in perovskite oxide superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Yang, F. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Gu, M. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Arenholz, E. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Browning, N. D. [Univ. of California, Davis, CA (United States). Department of Molecular and Cellular Biology; Takamura, Y. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science

    2012-01-05

    We investigate the structural, magnetic, and electrical properties of superlattices composed of the ferromagnetic/metal La0.7Sr0.3MnO3 and non-magnetic/metal La0.5Sr0.5TiO3 grown on (001)-oriented SrTiO3 substrates. Using a combination of bulk magnetometry, soft x-ray magnetic spectroscopy, and scanning transmission electron microscopy, we demonstrate that robust ferromagnetic properties can be maintained in this superlattice system where charge transfer at the interfaces is minimized. Thus, ferromagnetism can be controlled effectively through the chemical identity and the thickness of the individual superlattice layers.

  4. Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

    Science.gov (United States)

    Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

    2018-03-01

    Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

  5. Analysis of reaction between c+a and -c+a dislocations in GaN layer grown on 4-inch Si(111) substrate with AlGaN/AlN strained layer superlattice by transmission electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sugawara, Yoshihiro; Ishikawa, Yukari, E-mail: yukari@jfcc.or.jp [Japan Fine Ceramics Center, Atsuta, Nagoya, 456-8587 (Japan); Watanabe, Arata [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Miyoshi, Makoto; Egawa, Takashi [Research Center for Nano Devices and Advanced Materials, Nagoya Institute of Technology, Nagoya, 466-8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technoloy, Nagoya, 466-8555 (Japan)

    2016-04-15

    The behavior of dislocations in a GaN layer grown on a 4-inch Si(111) substrate with an AlGaN/AlN strained layer superlattice using horizontal metal-organic chemical vapor deposition was observed by transmission electron microscopy. Cross-sectional observation indicated that a drastic decrease in the dislocation density occurred in the GaN layer. The reaction of a dislocation (b=1/3[-211-3]) and anothor dislocation (b =1/3[-2113]) to form one dislocation (b =2/3[-2110]) in the GaN layer was clarified by plan-view observation using weak-beam dark-field and large-angle convergent-beam diffraction methods.

  6. The gas-bubble superlattice and the development of surface structure in He+ and H+ irradiated metals at 300 K

    International Nuclear Information System (INIS)

    Johnson, P.B.; Mazey, D.J.

    1980-01-01

    Transmission electron microscopy (TEM) is used to investigate the spatial arrangement of the small gas bubbles produced at 300 K in several fcc metals including copper and in the hcp metal titanium by 30 keV helium ion irradiation, and in copper by 16 keV proton irradiation. For the fcc metals it is found that the helium gas bubbles lie on a superlattice having a fcc structure with principal axes aligned with those of the metal matrix. The bubble lattice constant, α 1 , measured for a helium fluence just below the critical dose for radiation blistering of the metal surface (approx. equal to 4 x 10 21 He + /m 2 ) is typically approx. equal to 7 nm with bubble diameters typically approx. equal to 2 nm. For titanium, similar bubble ordering is seen is samples irradiated to a level of approx. equal to 1.5 x 10 22 He + /m 2 , with bubble sizes and spacings approximately 50% greater than those for the fcc metals. Pipe-like passages formed by the interconnection of strings of helium gas bubbles are evident in all metals studied. Superlattice formation is also a freature of the hydrogen bubble structure in copper following irradiation to a level of approx. equal to 1.3 x 10 23 H + /m 2 . At an early stage of bubble development small bubbles (approx. equal to 2 nm diameter) arranged on a lattice of spacing α 1 approx. equal to 12 nm are found. The bubble structure evolves further through several well-defined stages before radiation blistering of the surface occurs. Some implications for gas release and for synergistic effects in irradiated surfaces are suggested by these results and by those obtained in other recent experiments. (orig.)

  7. Enhancement of dielectric and ferroelectric properties of PbZrO3/PbTiO3 artificial superlattices

    International Nuclear Information System (INIS)

    Choi, Taekjib; Lee, Jaichan

    2005-01-01

    PbZrO 3 (PZO)/PbTiO 3 (PTO) artificial superlattices have been grown on La 0.5 Sr 0.5 CoO 3 (LSCO) (100)/MgO (100) substrate by pulsed laser deposition with various stacking periods from 1 to 100 unit cells. The PZO/PTO artificial lattice exhibited a diffraction pattern characteristic of a superlattice structure, i.e., a main diffraction peak with satellite peaks. The electrical properties of the superlattices were investigated as a function of the stacking period. The dielectric constant and remnant polarization improved on decreasing the stacking periodicity. The dielectric constant of the superlattice reached 800 at a stacking period of 1unit cell/1unit cell (PZO 1 /PTO 1 ), which is larger than that of the single PZT solid-solution film. Moreover, the remnant polarization reached a maximum, 2Pr = 38.7 μC/cm 2 , at a 2-unit-cell stacking period. Progressive enhancement of dielectric constant and remnant polarization in artificial PZO/PTO superlattice was accompanied by expansion of the (100)-plane spacing on decreasing the stacking periodicity. These results suggest that the lattice strain developed in the PZO/PTO superlattice may have influence on dielectric constant and ferroelectric behavior.

  8. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  9. Achievement of tailored laser frequencies by fine-tuning the structural parameters of Fibonacci's in AlxGa1-xAs/GaAs superlattices

    Science.gov (United States)

    Sefir, Yamina; Aziz, Zoubir; Djelti, Redouan; Bouadjemi, Bouabdellah; Bentata, Samir

    2013-10-01

    We investigate the tunneling conduction in AlxGa1-xAs/GaAs Fibonacci superlattices. Using the transfer matrix formalism, the effective mass and envelope function approximations, we calculate the transmission coefficient of quasiperiodic multibarrier system. We examine numerically the effect of the Fibonacci's structural parameters on the electronic energy spectra of Fibonacci Superlattices (FSL). Ours results show that increasing the width of Fibonacci's wells af allows to the confinement of subminibands with a widening of minigaps, this causes a consistent and coherent fragmentation. The barrier thickness of Fibonacci bf acts on the width of subminibands by controlling the interaction force between neighboring eigenstates. Its increase gives rise to singularly extended states. The barrier height Fibonacci Vf permit to control the degree of structural disorder in these structures. The variation of these parameters permits the design of laser with modulated wavelength.

  10. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001 Patterned Si Substrates by Metal Organic Chemical Vapor Deposition

    Directory of Open Access Journals (Sweden)

    Ludovico Megalini

    2018-02-01

    Full Text Available We report on the use of InGaAsP strain-compensated superlattices (SC-SLs as a technique to reduce the defect density of Indium Phosphide (InP grown on silicon (InP-on-Si by Metal Organic Chemical Vapor Deposition (MOCVD. Initially, a 2 μm thick gallium arsenide (GaAs layer was grown with very high uniformity on exact oriented (001 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO2 stripes and oriented along the [110] direction. Undercut at the Si/SiO2 interface was used to reduce the propagation of defects into the III–V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD; atomic force microscopy (AFM; transmission electron microscopy (TEM; and electron channeling contrast imaging (ECCI; which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 108/cm2 and 1.2 nm; respectively and 7.8 × 107/cm2 and 10.8 nm for the GaAs-on-Si layer.

  11. Interface disorder and transport properties in HTC/CMR superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E

    2004-08-01

    The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T{sub c} RBa{sub 2}Cu{sub 3}O{sub 7} (RBCO) and colossal magnetoresistance La{sub x}A{sub 1-x}MnO{sub 3} (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La{sub 2/3}Ca{sub 1/3}MnO{sub 3} and GdBCO/La{sub 0.6}Sr{sub 0.04}MnO{sub 3} superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness.

  12. Hydrostatic pressure and strain effects in short period InN/GaN superlattices

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2012-01-01

    The electronic structures of short-period pseudomorphically grown superlattices (SLs) of the form mInN/nGaN are calculated and the band gap variation with the well and the barrier thicknesses is discussed including hydrostatic pressure effects. The calculated band gap shows a strong dependence...... strongly on the strain conditions and SL geometry, but weakly on the applied external hydrostatic pressure....

  13. Topotactic interconversion of nanoparticle superlattices.

    Science.gov (United States)

    Macfarlane, Robert J; Jones, Matthew R; Lee, Byeongdu; Auyeung, Evelyn; Mirkin, Chad A

    2013-09-13

    The directed assembly of nanoparticle building blocks is a promising method for generating sophisticated three-dimensional materials by design. In this work, we have used DNA linkers to synthesize nanoparticle superlattices that have greater complexity than simple binary systems using the process of topotactic intercalation-the insertion of a third nanoparticle component at predetermined sites within a preformed binary lattice. Five distinct crystals were synthesized with this methodology, three of which have no equivalent in atomic or molecular crystals, demonstrating a general approach for assembling highly ordered ternary nanoparticle superlattices whose structures can be predicted before their synthesis. Additionally, the intercalation process was demonstrated to be completely reversible; the inserted nanoparticles could be expelled into solution by raising the temperature, and the ternary superlattice could be recovered by cooling.

  14. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  15. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  16. Structure and lattice dynamics of GaN and AlN. Ab-initio investigations of strained polytypes and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Wagner, Jan-Martin

    2004-10-14

    In this dissertation, ab-initio investigations of the strain influence on vibrational properties of GaN and AlN as well as of short-period GaN/AlN superlattices are presented. Based on densityfunctional theory and density-functional perturbation theory, for differently strained structures complete phonon spectra and related properties are calculated using the local-density approximation and norm-conserving pseudopotentials. (orig.)

  17. Molecular-scale noncontact atomic force microscopy contrasts in topography and energy dissipation on c(4x2) superlattice structures of alkanethiol self-assembled monolayers

    OpenAIRE

    Fukuma, Takeshi; Ichii, Takashi; Kobayashi, Kei; Yamada, Hirofumi; Matsushige, Kazumi

    2004-01-01

    Alkanethiol self-assembledmonolayers formed on Au(111) surfaces were investigated by noncontact atomic force microscopy (NC-AFM). Dodecanethiol monolayers prepared at 78 °C were imaged by NC-AFM, which revealed that the film is composed predominantly of two different phases of c(4×2)superlattice structures. The obtained molecular-scale NC-AFM contrasts are discussed in comparison with previously reported scanning tunneling microscopy images. We found that the energy dissipation image exhibits...

  18. Superlattice Structures, Electronic Properties, and Spin Dynamics of the Partially Cu-Extracted Phase for the Composite Crystal System CuxV4O11

    Science.gov (United States)

    Onoda, Masashige; Tamura, Asato

    2017-02-01

    The crystal structures, electronic properties, and spin dynamics of CuxV4O11 with 1.2 ≤ x electron paramagnetic resonance. This system has superlattice structures mainly ascribed to the partial ordering of Cu ions. Cu1.78V4O11 is triclinic with space group Pbar{1} and the double supercell of the V4O11 substructure of the composite crystal. The significantly Cu-extracted crystal Cu1.40V4O11 has a quadruple supercell with space group P1. The electron transport for V ions is nonmetallic owing to the polaronic nature and/or phonon softening and to the random potential of Cu ions. The Curie-Weiss-type paramagnetism basically originates from the Cu2+ chain coordinated octahedrally, and the EPR relaxation at low temperatures is understood through the exchange mechanism for the dipole-dipole and anisotropic exchange interactions. The near absence of paramagnetic behaviors of V4+ ions might be due to the spin-singlet ladder model or alternating-exchange chain model depending on the superlattice structure and valence distribution. The electrochemical performance of Li rechargeable batteries using this superlattice system is about 300 A h kg-1 at voltages above 2 V.

  19. Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Norton, D.P.

    1993-01-01

    Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

  20. Exchange bias in Fe/Cr double superlattices

    International Nuclear Information System (INIS)

    Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

    1999-01-01

    Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

  1. Exchange bias in Fe/Cr double superlattices

    International Nuclear Information System (INIS)

    Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

    2000-01-01

    Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

  2. Structural study of (CdS/ZnSe)/BeTe superlattices for λ=1.55 μm intersubband transition

    International Nuclear Information System (INIS)

    Li, B.S.; Akimoto, R.; Akita, K.; Hasama, H.

    2004-01-01

    A (CdS/ZnSe)/BeTe superlattice (SL), based on wide band gap II-VI compounds, with a large band offset of 3.1 eV was grown on a GaAs (001) substrate using molecular-beam epitaxy and an intersubband transition (ISB-T) of 0.78 eV (λ=1.58 μm) with a full width at half maximum (FWHM) of 96 meV observed. We studied structural properties using high-resolution x-ray diffraction combined with dynamic simulation and found through the strain state in samples that a ZnSe/BeTe interface having a quaternary interface layer (ZnTe) 0.45 (BeSe) 0.55 is preferentially formed despite the promotion of one molecular layer (ML) ZnTe interface formation. Be-Se bonds thus replace the Zn-Te bond in the transition region. For the CdS/ZnSe interface, an approximately 1 ML Zn 0.75 Cd 0.25 S ternary layer accompanied by ∼1 ML Zn 0.85 Cd 0.15 Se forms at the transition region due to Cd diffusion. X-ray (002) ω/2θ scan curves for (CdS/ZnSe)/BeTe SLs show sharp, intense satellite peaks exceeding ten orders, indicating high structure quality. We obtained excellent agreement between experimental diffraction patterns and the calculated curve via dynamic simulation for (CdS/ZnSe)/BeTe SLs. The good fits allows us to identify structure parameters in (CdS/ZnSe)/BeTe SLs, which are consistent with results of high-resolution transmission electron microscopy measurement. Based on dynamic simulated results, we obtained a structure of (CdS/ZnSe)/Be 1-x Mg x Te (x=1.2%) with an average lattice constant a SL matching the GaAs substrate. An ISB-T located at wavelength λ=1.55 μm with a narrow FWHM of 90 meV was thus realized at room temperature

  3. Depth-Resolved Composition and Electronic Structure of Buried Layers and Interfaces in a LaNiO{sub 3}/SrTiO{sub 3} Superlattice from Soft- and Hard- X-ray Standing-Wave Angle-Resolved Photoemission

    Energy Technology Data Exchange (ETDEWEB)

    Eiteneer, D. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Pálsson, G.K., E-mail: gunnar.palsson@physics.uu.se [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Nemšák, S. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Peter-Grünberg-Institut PGI-6, Forschungszentrum Julich, 52425 Julich (Germany); Gray, A.X. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025 (United States); Kaiser, A.M. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); Son, J.; LeBeau, J. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Conti, G. [Department of Physics, University of California, Davis, California 95616 (United States); Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States); and others

    2016-08-15

    Highlights: • Depth resolved electronic structure of LaNiO{sub 3}/SrTiO{sub 3} superlattices is measured. • The structure is determined by x-ray standing wave angle-resolved photoemission. • Similarity to the electronic structure of La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} is discussed. - Abstract: LaNiO{sub 3} (LNO) is an intriguing member of the rare-earth nickelates in exhibiting a metal-insulator transition for a critical film thickness of about 4 unit cells [Son et al., Appl. Phys. Lett. 96, 062114 (2010)]; however, such thin films also show a transition to a metallic state in superlattices with SrTiO{sub 3} (STO) [Son et al., Appl. Phys. Lett. 97, 202109 (2010)]. In order to better understand this transition, we have studied a strained LNO/STO superlattice with 10 repeats of [4 unit-cell LNO/3 unit-cell STO] grown on an (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} substrate using soft x-ray standing-wave-excited angle-resolved photoemission (SWARPES), together with soft- and hard- x-ray photoemission measurements of core levels and densities-of-states valence spectra. The experimental results are compared with state-of-the-art density functional theory (DFT) calculations of band structures and densities of states. Using core-level rocking curves and x-ray optical modeling to assess the position of the standing wave, SWARPES measurements are carried out for various incidence angles and used to determine interface-specific changes in momentum-resolved electronic structure. We further show that the momentum-resolved behavior of the Ni 3d e{sub g} and t{sub 2g} states near the Fermi level, as well as those at the bottom of the valence bands, is very similar to recently published SWARPES results for a related La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/SrTiO{sub 3} superlattice that was studied using the same technique (Gray et al., Europhysics Letters 104, 17004 (2013)), which further validates this experimental approach and our conclusions. Our

  4. Tunable superlattice in graphene to control the number of Dirac points.

    Science.gov (United States)

    Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K; Parikh, Pritesh; Grover, Sameer; Sensarma, Rajdeep; Tripathi, Vikram; Sengupta, K; Deshmukh, Mandar M

    2013-09-11

    Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

  5. Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

    International Nuclear Information System (INIS)

    Zhang Wei; Xue Jun-Shuai; Zhou Xiao-Wei; Zhang Yue; Liu Zi-Yang; Zhang Jin-Cheng; Hao Yue

    2012-01-01

    An AlGaN/GaN superlattice grown on the top of a GaN buffer induces the broadening of the full width at half maximum of (102) and (002) X-ray diffraction rocking curves. With an increase in the Si-doped concentration in the GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. A significant increase of the full width at the half maximum of the (002) rocking curves when the doping concentration reaches 2.5 × 10 19 cm −3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  6. Structural, chemical, and thermoelectric properties of Bi{sub 2}Te{sub 3} Peltier materials. Bulk, thin films, and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Peranio, Nicola

    2008-07-01

    In this work, the nature of the natural nanostructure (nns) was analysed and the correlations to the transport coefficients, particularly the lattice thermal conductivity, is discussed. Experimental methods are presented for the first time, yielding an accurate quantitative analysis of the chemical composition and of stress fields in Bi{sub 2}Te{sub 3} and in compounds with similar structural and chemical microstructures. This work can be subdivided as follows: (I) N-type Bi{sub 2}(Te{sub 0.91}Se{sub 0.09}){sub 3} and p-type (Bi{sub 0.26}Sb{sub 0.74}){sub 1.98}(Te{sub 0.99}Se{sub 0.01}){sub 3.02} bulk materials synthesised by the Bridgman technique. (II) Bi{sub 2}Te{sub 3} thin films and Bi{sub 2}Te{sub 3}/Bi{sub 2}(Te{sub 0.88}Se{sub 0.12}){sub 3} superlattices epitaxially grown by molecular beam epitaxy (MBE) on BaF{sub 2} substrates with periods of {delta}-12 nm at the Fraunhofer-Institut fuer Physikalische Messtechnik (IPM). (III) Experimental methods, i.e., TEM specimen preparation, high-accuracy quantitative chemical analysis by EDX in the TEM, and image simulations of dislocations and the nns according to the two-beam dynamical diffraction theory. The nns was analysed in detail by stereomicroscopy and by image simulation and was found to be a pure sinusoidal displacement field with (i) a displacement vector parallel to <5,-5,1> and an amplitude of about 10 pm and (ii) a wave vector parallel to {l_brace}1,0,10{r_brace} and a wavelength of 10 nm. The results obtained here showed a significant amount of stress in the samples, induced by the nns which was still not noticed and identified. Both kinds of nanostructures, artificial (ans) and natural (nns) nanostructures, yielded in thermoelectric materials a low lattice thermal conductivity which was beneficial for the thermoelectric figure of merit ZT. (orig.)

  7. Growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Itoi, Takaomi [Graduate School of Engineering, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Graduate School of Engineering, Kogakuin University, Hachioji, Tokyo 192-0015 (Japan)

    2016-04-11

    The growth kinetics and structural perfection of (InN){sub 1}/(GaN){sub 1–20} short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN){sub 1}/(GaN){sub 4} SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  8. Growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices on +c-GaN template in dynamic atomic layer epitaxy

    International Nuclear Information System (INIS)

    Kusakabe, Kazuhide; Hashimoto, Naoki; Wang, Ke; Imai, Daichi; Itoi, Takaomi; Yoshikawa, Akihiko

    2016-01-01

    The growth kinetics and structural perfection of (InN)_1/(GaN)_1_–_2_0 short-period superlattices (SPSs) were investigated with their application to ordered alloys in mind. The SPSs were grown on +c-GaN template at 650 °C by dynamic atomic layer epitaxy in conventional plasma-assisted molecular beam epitaxy. It was found that coherent structured InN/GaN SPSs could be fabricated when the thickness of the GaN barrier was 4 ML or above. Below 3 ML, the formation of SPSs was quite difficult owing to the increased strain in the SPS structure caused by the use of GaN as a template. The effective or average In composition of the (InN)_1/(GaN)_4 SPSs was around 10%, and the corresponding InN coverage in the ∼1 ML-thick InN wells was 50%. It was found that the effective InN coverage in ∼1 ML-thick InN wells could be varied with the growth conditions. In fact, the effective In composition could be increased up to 13.5%, i.e., the corresponding effective InN coverage was about 68%, by improving the capping/freezing speed by increasing the growth rate of the GaN barrier layer.

  9. Understanding the defect structure of solution grown zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Liew, Laura-Lynn [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Sankar, Gopinathan, E-mail: g.sankar@ucl.ac.uk [Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Handoko, Albertus D. [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); Goh, Gregory K.L., E-mail: g-goh@imre.a-star.edu.sg [Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A-STAR), 3 Research Link, Singapore 117602 (Singapore); School of Materials Science and Engineering, Nanyang Technological University, Block N4.1 Nanyang Avenue, Singapore 639798 (Singapore); Kohara, Shinji [Japan Synchrotron Radiation Research Institute (JASRI), Mikazuki, Sayo, Hyogo 679-5198 (Japan)

    2012-05-15

    Zinc oxide (ZnO) is a wide bandgap semiconducting oxide with many potential applications in various optoelectronic devices such as light emitting diodes (LEDs) and field effect transistors (FETs). Much effort has been made to understand the ZnO structure and its defects. However, one major issue in determining whether it is Zn or O deficiency that provides ZnO its unique properties remains. X-ray absorption spectroscopy (XAS) is an ideal, atom specific characterization technique that is able to probe defect structure in many materials, including ZnO. In this paper, comparative studies of bulk and aqueous solution grown ({<=}90 Degree-Sign C) ZnO powders using XAS and x-ray pair distribution function (XPDF) techniques are described. The XAS Zn-Zn correlation and XPDF results undoubtedly point out that the solution grown ZnO contains Zn deficiency, rather than the O deficiency that were commonly reported. This understanding of ZnO short range order and structure will be invaluable for further development of solid state lighting and other optoelectronic device applications. - Graphical abstract: Highlights: Black-Right-Pointing-Pointer ZnO powders have been synthesized through an aqueous solution method. Black-Right-Pointing-Pointer Defect structure studied using XAS and XPDF. Black-Right-Pointing-Pointer Zn-Zn correlations are less in the ZnO powders synthesized in solution than bulk. Black-Right-Pointing-Pointer Zn vacancies are present in the powders synthesized. Black-Right-Pointing-Pointer EXAFS and XPDF, when used complementary, are useful characterization techniques.

  10. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  11. In-plain electric properties of [CaMnO3/REMO3] (RE=Bi, La M=Fe, Fe0.8Mn0.2) superlattices grown by pulsed laser deposition method

    NARCIS (Netherlands)

    Iwata, N.; Watabe, Y.; Oikawa, T.; Takase, K.; Huijben, Mark; Inaba, T.; Oshima, K.; Rijnders, Augustinus J.H.M.; Yamamoto, H.

    2014-01-01

    The [CaMnO3 (CMO)/REMO3] (RE = Bi, La M = Fe, Fe0.8Mn0.2) superlattices show semiconducting behavior with transition temperatures (TEg) of 71, 127, and 151 K in the [CMO/BiFe0.8Mn0.2O3], [CMO/BiFeO3], and [CMO/LaFeO3] superlattices. The formation of a magnetic polaron is expected in the CMO layer of

  12. Magnetic modes in superlattices

    International Nuclear Information System (INIS)

    Oliveira, F.A.

    1990-04-01

    A first discussion of reciprocal propagation of magnetic modes in a superlattice is presented. In the absence of an applied external magnetic field a superllatice made of alternate layers of the type antiferromagnetic-non-magnetic materials presents effects similar to those of phonons in a dielectric superlattice. (A.C.A.S.) [pt

  13. Observation of the domain structure in Fe-Au superlattices with perpendicular anisotropy

    Energy Technology Data Exchange (ETDEWEB)

    Zoladz, M. E-mail: zoladz@uci.agh.edu.pl; Slezak, T.; Wilgocka-Slezak, D.; Spiridis, N.; Korecki, J.; Stobiecki, T. E-mail: stobieck@uci.agh.edu.pl; Roell, K

    2004-05-01

    Polar Kerr Microscopy was used to visualize characteristic transitions and external magnetic field driven domain structure evolution in a perpendicularly magnetized Fe-Au AF/FM double multilayer structure. Real time imaging performed in the external magnetic field allowed for identification of all sublayers magnetization reversal in accordance with measured PMOKE magnetization curve, showing strong dependence of transition character on the interlayer coupling type and adjacent sublayers magnetization orientation.

  14. Observation of the domain structure in Fe-Au superlattices with perpendicular anisotropy

    International Nuclear Information System (INIS)

    Zoladz, M.; Slezak, T.; Wilgocka-Slezak, D.; Spiridis, N.; Korecki, J.; Stobiecki, T.; Roell, K.

    2004-01-01

    Polar Kerr Microscopy was used to visualize characteristic transitions and external magnetic field driven domain structure evolution in a perpendicularly magnetized Fe-Au AF/FM double multilayer structure. Real time imaging performed in the external magnetic field allowed for identification of all sublayers magnetization reversal in accordance with measured PMOKE magnetization curve, showing strong dependence of transition character on the interlayer coupling type and adjacent sublayers magnetization orientation

  15. Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

    Science.gov (United States)

    Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

    2017-10-01

    InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

  16. MBE growth and characterisation of light rare-earth superlattices

    DEFF Research Database (Denmark)

    Ward, R.C.C.; Wells, M.R.; Bryn-Jacobsen, C.

    1996-01-01

    The molecular beam epitaxy growth techniques which have already successfully produced a range of heavy rare-earth superlattices have now been extended to produce superlattices of two light rare-earth elements, Nd/Pr, as well as superlattices and alloy films of a heavy/light system, Ho/Pr. High......-resolution X-ray diffraction analysis shows the Nd/Pr superlattices to be of high structural quality, while the Ho/Pr superlattices are significantly less so. In the Ho/Pr superlattices, Pr is found to retain its bulk dhcp crystal structure even in thin layers (down to 6 atomic planes thick) sandwiched between...... thick layers of hcp Ho. In addition, neutron diffraction studies of the He/Pr superlattices have shown that the helical Ho magnetic order is not coherent through the dhcp Pr layers, in contrast to previous hcp/hcp superlattices Ho/Y, Ho/Lu and Ho/Er. The series of Ho:Pr alloy films has shown structural...

  17. Studies of the structure and properties of organic monolayers, multilayers and superlattices

    International Nuclear Information System (INIS)

    Dutta, P.; Ketterson, J.B.

    1990-01-01

    Organic monolayers and multilayers are both scientifically fascinating and technologically promising; they are, however, both complex systems and relatively inaccessible to experimental probes. In this progress report, we describe our x-ray diffraction studies, which have given us substantial new information about the structures and phase transitions in monolayers on the surface of water; our use of these monolayers as a unique probe of the dynamics of wetting and spreading; and our studies of monolayer mechanical properties using a simple but effective technique available to anyone using the Wilhelmy method to measure surface tension. 20 refs., 11 figs

  18. Structural refinement of artificial superlattices by the X-ray diffraction method

    CERN Document Server

    Ishibashi, Y; Tsurumi, T

    1999-01-01

    This paper reports a structural refinement of BaTiO sub 3 (BTO)/SrTiO sub 3 (STO) artificially superstructured thin films. The refinement was achieved by taking into account the effect of interdiffusion between BTO and STO. The samples were prepared by a molecular-beam epitaxy method on SrTiO sub 3 (001) substrate at 600 .deg. C. The phonon model was employed to simulate the X-ray diffraction (XRD) profiles. A discrepancy was observed in the intensities of the satellite peaks when the effect of the interdiffusion between BTO and STO was not incorporated in the simulation. In successive simulations, the concentration profile due to the interdiffusion was first calculated according to Fick's second law, and then the coefficients of the Fourier series describing the lattice distortion and the modulation of the structure factor were determined. The XRD profiles thus simulated almost completely agreed with those observed. This indicates that XRD analysis with the calculation process proposed in this study will ena...

  19. Superlattice design for optimal thermoelectric generator performance

    Science.gov (United States)

    Priyadarshi, Pankaj; Sharma, Abhishek; Mukherjee, Swarnadip; Muralidharan, Bhaskaran

    2018-05-01

    We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ‘boxcar’ form, which is now well known to manifest the largest efficiency at a given output power in the ballistic limit. Using the coherent non-equilibrium Green’s function formalism coupled self-consistently with the Poisson’s equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattice with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32–0.46 MW/m 2 at efficiencies between 54%–43% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high zT el   =  6 value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.

  20. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  1. The structure of Ta nanopillars grown by glancing angle deposition

    International Nuclear Information System (INIS)

    Zhou, C.M.; Gall, D.

    2006-01-01

    Regular arrays of Ta nanopillars, 200 nm wide and 500 nm tall, were grown on SiO 2 nanosphere patterns by glancing angle sputter deposition (GLAD). Plan-view and cross-sectional scanning electron microscopy analyses show dramatic changes in the structure and morphology of individual nanopillars as a function of growth temperature T s ranging from 200 to 700 deg. C. At low temperatures, T s ≤ 300 deg. C, single nanopillars develop on each sphere and branch into subpillars near the pillar top. In contrast, T s ≥ 500 deg. C leads to branching during the nucleation stage at the pillar bottom. The top branching at low T s is associated with surface mounds on a growing pillar that, due to atomic shadowing, develop into separated subpillars. At high T s , the branching occurs during the nucleation stage where multiple nuclei on a single SiO 2 sphere develop into subpillars during a competitive growth mode which, in turn, leads to intercolumnar competition and the extinction of some nanopillars

  2. Atomic structure of CaF2/MnF2-Si(1 1 1) superlattices from X-ray diffraction

    International Nuclear Information System (INIS)

    Alcock, Simon G.; Nicklin, C.L.; Howes, P.B.; Norris, C.A.; Kyutt, R.N.; Sokolov, N.S.; Yakovlev, N.L.

    2007-01-01

    X-ray reflectivity and non-specular crystal truncation rod scans have been used to determine the three-dimensional atomic structure of the buried CaF 2 -Si(1 1 1) interface and ultrathin films of MnF 2 and CaF 2 within a superlattice. We show that ultrathin films of MnF 2 , below a critical thickness of approximately four monolayers, are crystalline, pseudomorphic, and adopt the fluorite structure of CaF 2 . High temperature deposition of the CaF 2 buffer layer produces a fully reacted, CaF 2 -Si(1 1 1) type-B interface. The mature, 'long' interface is shown to consist of a partially occupied layer of CaF bonded to the Si substrate, followed by a distorted CaF layer. Our atomistic, semi-kinematical scattering method extends the slab reflectivity method by providing in-plane structural information

  3. Investigation of switching region in superlattice phase change memories

    Science.gov (United States)

    Ohyanagi, T.; Takaura, N.

    2016-10-01

    We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

  4. Influence of AlGaN/GaN superlattice inserted structure on the performance of InGaN/GaN multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Wang, C.-L.; Tsai, M.-C.; Gong, J.-R.; Liao, W.-T.; Lin, P.-Y.; Yen, K.-Y.; Chang, C.-C.; Lin, H.-Y.; Hwang, S.-K.

    2007-01-01

    Investigations were conducted to explore the effect of Al 0.3 Ga 0.7 N/GaN short-period superlattice (SPSL)-inserted structures in the GaN under layer on the performance of In 0.2 Ga 0.8 N/GaN multiple quantum well (MQW) light emitting diodes (LEDs). The Al 0.3 Ga 0.7 N/GaN SPSL-inserted LEDs were found to exhibit improved materials and device characteristics including decrements in ideality factor and reverse leakage current. The results of etch pit counts reveal that SPSL-induced threading dislocation density reduction in the SPSL-inserted In 0.2 Ga 0.8 N/GaN MQW LED structures enables the improved LED performance

  5. Participation of mechanical oscillations in thermodynamics of crystals with superlattice

    International Nuclear Information System (INIS)

    Jacjimovski K, S.; Mirjanicj Lj, D.; Shetrajchicj P, J.

    2012-01-01

    The superlattice, consisting of two periodically repeating films, is analyzed in proposal paper. Due to the structural deformations and small thickness, the acoustic phonons do not appear in these structures. The spontaneous appearance of phonons is possible in an ideal structure only. Therefore the thermodynamical analysis of phonon subsystems is the first step in investigations of superlattice properties. Internal energy as well as specific heat will be analyzed, too. Low-temperature behavior of these quantities will be compared to the corresponding quantities of bulk structures and of thin films. The general conclusion is that the main thermodynamic characteristics of superlattices are considerably lower than those of the bulk structure. Consequently, their superconductive characteristics are better than the superconductive characteristics of corresponding bulk structures. Generally considered, the application field of superlattices is wider than that of bulk structures and films. (Author)

  6. Infrared spectroscopy of an epitaxial BaTiO.sub.3./sub./SrTiO.sub.3./sub. superlattice grown on a (110) SmScO.sub.3./sub. substrate

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Soukiassian, A.; Schlom, D. G.; Xi, X.X.

    2014-01-01

    Roč. 115, č. 18 (2014), "184102-1"-"184102-7" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP204/11/1011 Institutional support: RVO:68378271 Keywords : perovskites * superlattices Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  7. Electronic properties of superlattices on quantum rings.

    Science.gov (United States)

    da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

    2017-04-26

    We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

  8. Thermal etching rate of GaN during MOCVD growth interruption in hydrogen and ammonia ambient determined by AlGaN/GaN superlattice structures

    Science.gov (United States)

    Zhang, Feng; Ikeda, Masao; Zhang, Shuming; Liu, Jianping; Tian, Aiqin; Wen, Pengyan; Cheng, Yang; Yang, Hui

    2017-10-01

    Thermal etching effect of GaN during growth interruption in the metalorganic chemical vapor deposition reactor was investigated in this paper. The thermal etching rate was determined by growing a series of AlGaN/GaN superlattice structures with fixed GaN growth temperature at 735 °C and various AlGaN growth temperature changing from 900 °C to 1007 °C. It was observed that the GaN layer was etched off during the growth interruption when the growth temperature ramped up to AlGaN growth temperature. The etching thickness was determined by high resolution X-ray diffractometer and the etching rate was deduced accordingly. An activation energy of 2.53 eV was obtained for the thermal etching process.

  9. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, Stefano; Zallo, Eugenio; Momand, Jamo; Wang, Ruining; Kooi, Bart J.; Verheijen, Marcel A.; Calarco, Raffaella

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers.

  10. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    NARCIS (Netherlands)

    Cecchi, S.; Zallo, E.; Momand, J.; Wang, R.; Kooi, B.J.; Verheijen, M.A.; Calarco, R.

    Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here

  11. Tunneling in quantum superlattices with variable lacunarity

    Energy Technology Data Exchange (ETDEWEB)

    Villatoro, Francisco R. [Departamento de Lenguajes y Ciencias de la Computacion, Universidad de Malaga, E-29071 Malaga (Spain); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, E-46022 Valencia (Spain)], E-mail: jmonsori@fis.upv.es

    2008-05-19

    Fractal superlattices are composite, aperiodic structures comprised of alternating layers of two semiconductors following the rules of a fractal set. The scattering properties of polyadic Cantor fractal superlattices with variable lacunarity are determined. The reflection coefficient as a function of the particle energy and the lacunarity parameter present tunneling curves, which may be classified as vertical, arc, and striation nulls. Approximate analytical formulae for such curves are derived using the transfer matrix method. Comparison with numerical results shows good accuracy. The new results may be useful in the development of band-pass energy filters for electrons, semiconductor solar cells, and solid-state radiation sources up to THz frequencies.

  12. Single-crystal FCC and DHCP phases in Ce/Pr superlattices

    International Nuclear Information System (INIS)

    Lee, S.; Goff, J.P.; Ward, R.C.C.; Wells, M.R.; McIntyre, G.J.

    2002-01-01

    Cerium usually comprises a mixture of polycrystalline FCC and DHCP allotropes. Single-crystal Ce has been stabilised in Ce/Pr superlattices grown using molecular beam epitaxy. It is found that FCC or DHCP phases can be obtained depending on superlattice composition and growth conditions. Low-temperature neutron scattering was performed on Ce/Pr samples using the triple-axis spectrometer D10 at the ILL. Such measurements revealed one sample, [Ce 20 Pr 20 ] 60 , to be a single crystal with a DHCP unit cell; while another, [Ce 30 Pr 10 ] 56 , was a mixture of FCC and DHCP phases. Antiferromagnetic ordering of magnetic moments was observed in the DHCP sample (T N =11.1 K) with a magnetic structure similar to that found in bulk β-Ce. Surprisingly, the magnetic ordering was found to be confined to single Ce blocks. Furthermore, it was found that, at low temperatures, the lattice contraction observed for bulk FCC Ce was suppressed in Ce/Pr superlattices. (orig.)

  13. Fe-Substitution for Ni in Misch Metal-Based Superlattice Hydrogen Absorbing Alloys—Part 1. Structural, Hydrogen Storage, and Electrochemical Properties

    Directory of Open Access Journals (Sweden)

    Kwo-Hsiung Young

    2016-11-01

    Full Text Available The effects of Fe partially replacing Ni in a misch metal-based superlattice hydrogen absorbing alloy (HAA were studied. Addition of Fe increases the lattice constants and abundance of the main Ce2Ni7 phase, decreases the NdNi3 phase abundance, and increases the CaCu5 phase when the Fe content is above 2.3 at%. For the gaseous phase hydrogen storage (H-storage, Fe incorporation does not change the storage capacity or equilibrium pressure, but it does decrease the change in both entropy and enthalpy. With regard to electrochemistry, >2.3 at% Fe decreases both the full and high-rate discharge capacities due to the deterioration in both bulk transport (caused by decreased secondary phase abundance and consequent lower synergetic effect and surface electrochemical reaction (caused by the lower volume of the surface metallic Ni inclusions. In a low-temperature environment (−40 °C, although Fe increases the reactive surface area, it also severely hinders the ability of the surface catalytic, leading to a net increase in surface charge-transfer resistance. Even though Fe increases the abundance of the beneficial Ce2Ni7 phase with a trade-off for the relatively unfavorable NdNi3 phase, it also deteriorates the electrochemical performance due to a less active surface. Therefore, further surface treatment methods that are able to increase the surface catalytic ability in Fe-containing superlattice alloys and potentially reveal the positive contributions that Fe provides structurally are worth investigating in the future.

  14. Theoretical study of nitride short period superlattices

    Science.gov (United States)

    Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

    2018-02-01

    Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

  15. Planar channeling in superlattices: Theory

    International Nuclear Information System (INIS)

    Ellison, J.A.; Picraux, S.T.; Allen, W.R.; Chu, W.K.

    1988-01-01

    The well-known continuum model theory for planar channeled energetic particles in perfect crystals is extended to layered crystalline structures and applied to superlattices. In a strained-layer structure, the planar channels with normals which are not perpendicular to the growth direction change their direction at each interface, and this dramatically influences the channeling behavior. The governing equation of motion for a planar channeled ion in a strained-layer superlattice with equal layer thicknesses is a one degree of freedom nonlinear oscillator which is periodically forced with a sequence of δ functions. These δ functions, which are of equal spacing and amplitude with alternating sign, represent the tilts at each of the interfaces. Thus upon matching an effective channeled particle wavelength, corresponding to a natural period of the nonlinear oscillator, to the period of the strained-layer superlattice, corresponding to the periodic forcing, strong resonance effects are expected. The condition of one effective wavelength per period corresponds to a rapid dechanneling at a well-defined depth (catastrophic dechanneling), whereas two wavelengths per period corresponds to no enhanced dechanneling after the first one or two layers (resonance channeling). A phase plane analysis is used to characterize the channeled particle motion. Detailed calculations using the Moliere continuum potential are compared with our previously described modified harmonic model, and new results are presented for the phase plane evolution, as well as the dechanneling as a function of depth, incident angle, energy, and layer thickness. General scaling laws are developed and nearly universal curves are obtained for the dechanneling versus depth under catastrophic dechanneling

  16. ZnSe/ZnSeTe Superlattice Nanotips

    Directory of Open Access Journals (Sweden)

    Young SJ

    2010-01-01

    Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

  17. Scaling properties of optical reflectance from quasi-periodic superlattices

    International Nuclear Information System (INIS)

    Wu Xiang; Yao Hesheng; Feng Weiguo

    1991-08-01

    The scaling properties of the optical reflectance from two types of quasi-periodic metal-insulator superlattices, one with the structure of Cantor bars and the other with the structure of Cantorian-Fibonaccian train, have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the hydrodynamic model of electron dynamics and transfer-matrix method, and be taking into account retardation effects, we have presented the formalism of the reflectivity for the superlattices. From our numerical results, we found that the reflection spectra of the quasi-superlattices have a rich structure of self-similarity. The interesting scaling indices, which are related to the fractal dimensions, of the spectra are also discussed for the two kinds of the quasi-superlattices. (author). 10 refs, 7 figs

  18. Structural, electronic properties and enhancement of electrical polarization in Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} superlattice by first-principles calculations

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Haipeng; Deng, Longjiang [National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China); Sun, Xun, E-mail: sunxunphy@hotmail.com; Hou, Zhihua; Yang, Wen; Wang, Siyuan; Xie, Jianliang [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China)

    2016-03-15

    Employing first-principles calculations, structural, electronic properties of new multiferroic material Er{sub 2}NiMnO{sub 6}/La{sub 2}NiMnO{sub 6} perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr{sub 2}NiMnO{sub 7} structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

  19. Structural, electronic properties and enhancement of electrical polarization in Er2NiMnO6/La2NiMnO6 superlattice by first-principles calculations

    Directory of Open Access Journals (Sweden)

    Haipeng Lu

    2016-03-01

    Full Text Available Employing first-principles calculations, structural, electronic properties of new multiferroic material Er2NiMnO6/La2NiMnO6 perovskite superlattice are investigated. This structure is computed as monoclinic phase with obvious distortion. The average in-plane anti-phase rotation angle, average out-of-plane in-phase rotation angle and other microscopic features are reported in this paper. Ni and Mn are found in this superlattice that stay high spin states. These microscopic properties play important roles in multiferroic properties. Based on these microscopic features, the relationship between the direction of spontaneous polarization and the order of substitution in neighboring A-O layers is explained. Finally, we try to enhance the electrical polarization magnitude by 32% by altering the previous superlattice as LaEr2NiMnO7 structure. Our results show that both repulsion force of A site rare earth ions and the arrangement of B site ions can exert influences on spontaneous polarization.

  20. Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

    International Nuclear Information System (INIS)

    Jin, Xiuguang; Matsuba, Shunya; Honda, Yosuke; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu

    2013-01-01

    GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced. - Highlights: • GaAs/GaAsP strained superlattices are excellent candidates for spin-polarized electron beam. • Pulse spin-polarized electron beam is required for investigating the magnetic domain change. • Picosecond electron bunches were achieved from GaAs/GaAsP superlattice photocathode. • TEM observation revealed a small disorder of superlattice layers. • Improvement of superlattice periodicity can achieve much faster electron bunches

  1. Sm cluster superlattice on graphene/Ir(111)

    Science.gov (United States)

    Mousadakos, Dimitris; Pivetta, Marina; Brune, Harald; Rusponi, Stefano

    2017-12-01

    We report on the first example of a self-assembled rare earth cluster superlattice. As a template, we use the moiré pattern formed by graphene on Ir(111); its lattice constant of 2.52 nm defines the interparticle distance. The samarium cluster superlattice forms for substrate temperatures during deposition ranging from 80 to 110 K, and it is stable upon annealing to 140 K. By varying the samarium coverage, the mean cluster size can be increased up to 50 atoms, without affecting the long-range order. The spatial order and the width of the cluster size distribution match the best examples of metal cluster superlattices grown by atomic beam epitaxy on template surfaces.

  2. Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jogi, Indrek [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)], E-mail: indrek.jogi@ut.ee; Paers, Martti; Aarik, Jaan; Aidla, Aleks [University of Tartu, Institute of Physics, Riia 142, 51014, Tartu (Estonia); Laan, Matti [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia); Sundqvist, Jonas; Oberbeck, Lars; Heitmann, Johannes [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Strasse 180, 01099, Dresden (Germany); Kukli, Kaupo [University of Tartu, Institute of Experimental Physics and Technology, Taehe 4, 51010, Tartu (Estonia)

    2008-06-02

    Conformity and phase structure of atomic layer deposited TiO{sub 2} thin films grown on silicon substrates were studied. The films were grown using TiCl{sub 4} and Ti(OC{sub 2}H{sub 5}){sub 4} as titanium precursors in the temperature range from 125 to 500 {sup o}C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 {mu}m depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl{sub 4}, the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC{sub 2}H{sub 5}){sub 4} remained somewhat inferior compared to the films grown from TiCl{sub 4}.

  3. Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

    Science.gov (United States)

    Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

    2017-02-01

    In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

  4. structural reliability of the nigerian grown abura timber bridge beam

    African Journals Online (AJOL)

    ENGR. J. I. AGUWA

    2013-07-02

    Jul 2, 2013 ... Structural analysis and deterministic design of a timber bridge beam using the Nigerian ... practice especially when it involves naturally occuring materials .... the beam due to distributed loads is; from [15]. (4). It is assumed that ...

  5. Ferroic properties in bi-component perovskites: artificial superlattices and naturally forming compounds

    International Nuclear Information System (INIS)

    Saha-Dasgupta, T

    2014-01-01

    The use of four different metal cations in a bi-component perovskite ABO 3 structure with 50 : 50 substitution at A sublattice as well as B sublattice, opens up the door for materials designing, with the aim to improve ferroic properties. This can be achieved following two different routes; one using the concept of artificially grown superlattices with alternating layers of ABO 3 and A′B′O 3 perovskites in a periodic set-up and another, through synthesis of naturally grown bulk double perovskites with ordered arrangement of A and A′ cations, simultaneously with that of B and B′ cations. The tremendous progress in layered deposition techniques as well as advances in solid state chemistry methods, has made both routes equally plausible and an area of much activity. This review summarizes some of the recent progress in this field, with a special emphasis on two computational studies, (i) one on ultra-thin 1–1 superlattices built out of paraelectric and ferroelectric components, showing tunable piezoelectric properties, and (ii) another on CrOs-based double perovskites which show multiferroic behavior, achieved through layered ordering of A and A′ cations. (topical review)

  6. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

    2016-02-29

    We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  7. Structural and magnetic properties of Gd/Fe multilayers grown by pulsed laser deposition

    DEFF Research Database (Denmark)

    Kant, K. Mohan; Bahl, Christian Robert Haffenden; Pryds, Nini

    2010-01-01

    This work investigates the structural and the magnetic properties of Gd/Fe multilayered thin films grown by pulsed laser deposition onto Si (001) substrates at room temperature. he Fe layer thickness is varied from 70 to 150 nm and its effect on the structural and magnetic properties of Fe/Gd/Fe ...

  8. Structure of a randomly grown 2-d network

    DEFF Research Database (Denmark)

    Ajazi, Fioralba; Napolitano, George M.; Turova, Tatyana

    2015-01-01

    We introduce a growing random network on a plane as a model of a growing neuronal network. The properties of the structure of the induced graph are derived. We compare our results with available data. In particular, it is shown that depending on the parameters of the model the system undergoes in...... in time different phases of the structure. We conclude with a possible explanation of some empirical data on the connections between neurons.......We introduce a growing random network on a plane as a model of a growing neuronal network. The properties of the structure of the induced graph are derived. We compare our results with available data. In particular, it is shown that depending on the parameters of the model the system undergoes...

  9. Superlattice to nanoelectronics

    CERN Document Server

    Tsu, Raphael

    2005-01-01

    Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement...

  10. Computer simulation of the anomalous elastic behavior of thin films and superlattices

    International Nuclear Information System (INIS)

    Wolf, D.

    1992-10-01

    Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of thin films and superlattices (the so-called supermodulus effect). The investigation of free-standing thin films and of superlattices of grain boundaries shows that the supermodulus effect is not an electronic but a structural interface effect intricately connected with the local atomic disorder at the interfaces. The consequent predictions that (1) coherent strained-layer superlattices should show the smallest elastic anomalies and (2) the introduction of incoherency at the interfaces should enhance all anomalies are validated by simulations of dissimilar-material superlattices. 38 refs, 10 figs

  11. The structural grading of young South African grown Pinus patula ...

    African Journals Online (AJOL)

    The young P. patula timber tested in this study had good bending strength (MOR) properties with higher characteristic grade values than required. The timber, however, had low stiffness and did not comply with the SANS 10163-1 requirements for mean modulus of elasticity on edge (MOEedge) for any of the structural ...

  12. Superlattice Microstructured Optical Fiber

    Science.gov (United States)

    Tse, Ming-Leung Vincent; Liu, Zhengyong; Cho, Lok-Hin; Lu, Chao; Wai, Ping-Kong Alex; Tam, Hwa-Yaw

    2014-01-01

    A generic three-stage stack-and-draw method is demonstrated for the fabrication of complex-microstructured optical fibers. We report the fabrication and characterization of a silica superlattice microstructured fiber with more than 800 rhomboidally arranged air-holes. A polarization-maintaining fiber with a birefringence of 8.5 × 10−4 is demonstrated. The birefringent property of the fiber is found to be highly insensitive to external environmental effects, such as pressure. PMID:28788693

  13. Thermoelectric transport in superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Reinecke, T L; Broido, D A

    1997-07-01

    The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

  14. Structural and Morphological Difference Between Ti/TiN/TiCN Coatings Grown in Multilayer and Graded Form

    International Nuclear Information System (INIS)

    Restrepo, E.; Baena, A.; Agudelo, C.; Castillo, H.; Devia, A.; Marino, A.

    2006-01-01

    Thin films can be grown in super-lattice, multilayers and graded form, having each one advantages and disadvantages. The difference between multilayer and graded coatings is the interface. In multilayers the interface is abrupt and in graded coatings it is diffuse. The interface influences many chemical and physical properties of the materials, and its choice depends on the application. Graded coatings have the advantage of having gradual properties such as thermal expansion coefficient and lattice parameter, avoiding adherence problems due to good match between their component materials. In this work the comparison between some properties of coatings grown as multilayer and graded is performed. The materials are produced using the sputtering DC technique because of its facility to control the deposition parameters and generate a slow growth. The target is a disc of titanium and the samples are made of stainless steel 304. The working gases are argon, nitrogen and methane, which are mixed according to the material to be produced, i.e. Ti layer is grown with argon, the TiN film is produced with a mixture of argon and nitrogen, and the TiCN material is obtained mixing argon, nitrogen and methane. These materials are characterized with AFM in order to determine grain size and with XPS studying the chemical composition and performing depth profiles

  15. Electrochemically grown metallic nanocomb structures on nanoporous alumina templates

    International Nuclear Information System (INIS)

    Kaya, Savas; Atar, Erdem

    2011-01-01

    Electrochemical growth of metallic nanocomb structures on anodized alumina templates is described. Nanocombs originate from the orderly growth and merger of very thin (d=15±5 nm) metallic nanowires which do not completely fill much larger pores (d∼100 nm) in the alumina template (t≤3 μm). Instead, the nanowires prefer growing along the inner corners of the hexagonal pores, coalescing into a highly ordered structure as they emerge, resulting a metallic form reminiscent of the topology of the original template. We disclose here the typical processing conditions and the microstructure of this previously unknown material as observed with a scanning electron microscope (SEM) and energy dispersive x-ray (EDX) spectroscopy. It is shown that Au nanocombs have an anomalous EDX spectra and can emit electrons at a field of ∼1 kV/cm.

  16. Moiré superlattice-level stick-slip instability originated from geometrically corrugated graphene on a strongly interacting substrate

    Science.gov (United States)

    Shi, Ruoyu; Gao, Lei; Lu, Hongliang; Li, Qunyang; Ma, Tian-Bao; Guo, Hui; Du, Shixuan; Feng, Xi-Qiao; Zhang, Shuai; Liu, Yanmin; Cheng, Peng; Hu, Yuan-Zhong; Gao, Hong-Jun; Luo, Jianbin

    2017-06-01

    Two dimensional (2D) materials often exhibit novel properties due to various coupling effects with their supporting substrates. Here, using friction force microscopy (FFM), we report an unusual moiré superlattice-level stick-slip instability on monolayer graphene epitaxially grown on Ru(0 0 0 1) substrate. Instead of smooth friction modulation, a significant long-range stick-slip sawtooth modulation emerges with a period coinciding with the moiré superlattice structure, which is robust against high external loads and leads to an additional channel of energy dissipation. In contrast, the long-range stick-slip instability reduces to smooth friction modulation on graphene/Ir(1 1 1) substrate. The moiré superlattice-level slip instability could be attributed to the large sliding energy barrier, which arises from the morphological corrugation of graphene on Ru(0 0 0 1) surface as indicated by density functional theory (DFT) calculations. The locally steep humps acting as obstacles opposing the tip sliding, originates from the strong interfacial electronic interaction between graphene and Ru(0 0 0 1). This study opens an avenue for modulating friction by tuning the interfacial atomic interaction between 2D materials and their substrates.

  17. The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices

    International Nuclear Information System (INIS)

    Ferre Llin, L.; Samarelli, A.; Weaver, J. M. R.; Dobson, P. S.; Paul, D. J.; Cecchi, S.; Chrastina, D.; Isella, G.; Etzelstorfer, T.; Stangl, J.; Müller Gubler, E.

    2013-01-01

    The electrical conductivity, Seebeck coefficients, and thermal conductivities of a range of p-type Ge/Si 0.5 Ge 0.5 superlattices designed for thermoelectric generation and grown by low energy plasma enhanced chemical vapor deposition have been measured using a range of microfabricated test structures. For samples with barriers around 0.5 nm in thickness, the measured Seebeck coefficients were comparable to bulk p-SiGe at similar doping levels suggesting the holes see the material as a random bulk alloy rather than a superlattice. The Seebeck coefficients for Ge quantum wells of 2.85 ± 0.85 nm increased up to 533 ± 25 μV/K as the doping was reduced. The thermal conductivities are between 4.5 to 6.0 Wm −1 K −1 which are lower than comparably doped bulk Si 0.3 Ge 0.7 but higher than undoped Si/Ge superlattices. The highest measured figure of merit ZT was 0.080 ± 0.011 obtained for the widest quantum well studied. Analysis suggests that interface roughness is presently limiting the performance and a reduction in the strain between the quantum wells and barriers has the potential to improve the thermoelectric performance

  18. Influence of the interface on growth rates in AlN/GaN short period superlattices via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-11-01

    AlN/GaN short period superlattices are well suited for a number of applications including, but not limited to, digital alloys, intersubband devices, and emitters. In this work, AlN/GaN superlattices with periodicities ranging from 10 to 20 Å have been grown via metal organic vapor phase epitaxy in order to investigate the influence of the interface on the binary alloy growth rates. The GaN growth rate at the interface was observed to decrease with increasing GaN thickness while the AlN growth rate remained constant. This has been attributed to a decrease in the decomposition rate of GaN at the hetero-interface as seen in other III-V hetero-structures.

  19. Engineering the oxygen coordination in digital superlattices

    Science.gov (United States)

    Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong; Rosenberg, Richard A.; Marks, Laurence D.; Fong, Dillon D.

    2017-12-01

    The oxygen sublattice in complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using synchrotron X-ray scattering in combination with soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, with higher Co oxidation states increasing the valence band maximum. This work demonstrates a new strategy for engineering unique electronic structures in the transition metal oxides using short-period superlattices.

  20. Synergy of atom-probe structural data and quantum-mechanical calculations in a theory-guided design of extreme-stiffness superlattices containing metastable phases

    Czech Academy of Sciences Publication Activity Database

    Friák, Martin; Tytko, D.; Holec, D.; Choi, P.P.; Eisenlohr, P.; Raabe, D.; Neugebauer, J.

    2015-01-01

    Roč. 17, č. 9 (2015), Art . n. 093004 ISSN 1367-2630 Institutional support: RVO:68081723 Keywords : ab initio * composites * elasticity * nitrides * superlattices * Young's modulus Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.570, year: 2015

  1. Real structure of LaGaO3 monocrystals grown by Czochralski method

    International Nuclear Information System (INIS)

    Morozov, A.N.; Morozova, O.Yu.; Ponomarev, N.M.

    1993-01-01

    A complex X-ray diffraction study of lanthanum (ortho)gallate crystal structure and structural defects in LaGaO 3 crystals grown by the Czochralski method is carried out. Coordinates of atoms in LaGaO 3 unit cell are determined. X-Ray topographic studies of oriented LaGaO 3 sublayers for high-tc superconductor film growth are optimized. The substructure of monocrystals is studied

  2. A possible radiation-resistant solar cell geometry using superlattices

    Science.gov (United States)

    Goradia, C.; Clark, R.; Brinker, D.

    1985-01-01

    A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

  3. Disorder influence on the magnetic properties of La0.55Sr0.45MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Haberkorn, N.; Sirena, M.; Guimpel, J.; Steren, L.B.

    2004-01-01

    The structural and physical properties of La 0.55 Sr 0.45 MnO 3 /SrTiO 3 superlattices grown by magnetron sputtering are studied. Two deposition temperatures and different mismatched substrates and buffer layers were used. The structure was determined by refinement through X-ray diffraction pattern fitting. The results indicate 1 unit cell (u.c.) interdiffusion at the interfaces and a 1 u.c. layer thickness fluctuation, i.e. roughness. In-plane hysteresis loops show the expected ferromagnetic behavior, while the perpendicular-to-plane hysteresis loops show anomalies which could evidence magnetic domain size inhomogeneities and stress

  4. Structure and transport properties of coherently strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3}/SrTiO{sub 3} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yafeng [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner Str. 8, 85748 Garching (Germany); Northwest Institute for Nonferrous Metal Research, P.O. Box 51, Xi' an, Shaanxi 710016 (China); Klein, J.; Herbstritt, F.; Philipp, J.B.; Marx, A.; Alff, L.; Gross, R. [Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften, Walther-Meissner Str. 8, 85748 Garching (Germany); Zhang, H. [Engineering Center of Electronic Information Materials and Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2005-07-01

    We have prepared high quality, coherently strained La{sub 2/3}Ca{sub 1/3}MnO{sub 3}/SrTiO{sub 3} superlattices with different modulation periods by laser molecular beam epitaxy on (001) SrTiO{sub 3} and NdGaO{sub 3} substrates. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). All superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.02 ). The in-plane coherency strain was varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting tetragonal distortion of LCMO. The c-axis lattice parameter of LCMO could be continuously changed from 3.87 Aa to 3.79 Aa. The interface roughness was analyzed by offset low-angle X-ray reflectivity and low-angle rocking curve measurements. It was found to be of the order of one unit cell with a significant part of the roughness being vertically correlated. The strain induced tetragonal distortion of LCMO was found to cause strong reduction of the paramagnetic to ferromagnetic transition temperature from about 260 to 120 K and an increase of resistivity. The transport properties in the paramagnetic regime could be well described by a small polaron hopping model. The lattice distortions were found to result in a significant increase of the polaron trapping energy. Our results show that coherently strain superlattices are an interesting model system for the systematic study of the effect of lattice distortions on the magnetic and electronic properties of the doped manganites. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Structural and physical properties of InAlAs quantum dots grown on GaAs

    Science.gov (United States)

    Vasile, B. S.; Daly, A. Ben; Craciun, D.; Alexandrou, I.; Lazar, S.; Lemaître, A.; Maaref, M. A.; Iacomi, F.; Craciun, V.

    2018-04-01

    Quantum dots (QDs), which have particular physical properties due to the three dimensions confinement effect, could be used in many advanced optoelectronic applications. We investigated the properties of InAlAs/AlGaAs QDs grown by molecular beam epitaxy on GaAs/Al0.5Ga0.5As layers. The optical properties of QDs were studied by low-temperature photoluminescence (PL). Two bandgap transitions corresponding to the X-Sh and X-Ph energy structure were observed. The QDs structure was investigated using high-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM). HRXRD investigations showed that the layers grew epitaxially on the substrate, with no relaxation. HRTEM investigations confirmed the epitaxial nature of the grown structures. In addition, it was revealed that the In atoms aggregated in some prismatic regions, forming areas of high In concentration, that were still in perfect registry with the substrate.

  6. Fibonacci quasiregular graphene-based superlattices: Quasiperiodicity and its effects on the transmission, transport and electronic structure properties

    Energy Technology Data Exchange (ETDEWEB)

    García-Cervantes, H.; Madrigal-Melchor, J.; Martínez-Orozco, J.C.; Rodríguez-Vargas, I., E-mail: isaac@fisica.uaz.edu.mx

    2015-12-01

    We study the transmission, transport and electronic structure properties of aperiodic Fibonacci monolayer graphene-based structures (AFGBSs). The transfer matrix method has been implemented to obtain the transmittance, linear-regime conductance and electronic structure. In particular, we have studied two types of aperiodic graphene-based structures: (1) electrostatic AFGBSs (EAFGBSs), structures formed with electrostatic potentials, and (2) substrate AFGBSs (SAFGBSs), obtained alternating substrates that can open and non-open, such as SiC and SiO{sub 2}, an energy bandgap on graphene. We have found that the transmission properties can be modulated readily by changing the main parameters of the systems: well and barrier widths, energy and angle of incident electrons and the degree of aperiodicity. In the case of the linear-regime conductance turns out that it diminishes various orders of magnitude increasing the barrier width for SAFGBSs. On the contrary, Klein tunneling sustains the conductance in EAFGBSs. Calculating the electronic structure or miniband-structure formation and its fragmentation we establish a direct connection between the conductance peaks and the opening, closure and degeneration of energy minibands for both EAFGSLs and SAFGSLs.

  7. Molecular dynamics simulation of thermal conductivities of superlattice nanowires

    Institute of Scientific and Technical Information of China (English)

    YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)

    2003-01-01

    Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.

  8. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  9. Soliton excitation in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.; Twum, A.K.

    1995-10-01

    Excitation of soliton in superlattice has been investigated theoretically. It is noted that the soliton velocity u and the length L depend on the amplitude E 0 and that an increase in the amplitude causes soliton width L to approach zero and the velocity u to that of light V in homogeneous medium. The characteristic parameters of soliton u, L and E 0 are related by expression u/L E 0 = ed/2(h/2π) which is constant depending only on the SL period d. It is observed also that the soliton has both energy E = 8V 2 (1 - u 2 /V 2 ) -1/2 and momentum P = u/V 2 E which makes it behave as relativistic free particle with rest energy 8V 2 . Its interaction with electrons can cause the soliton electric effect in SL. (author). 27 refs

  10. Superlattice electroabsorption radiation detector

    International Nuclear Information System (INIS)

    Cooke, B.J.

    1993-06-01

    This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

  11. Transport properties of YBa2Cu3O7/PrBa2Cu3O7-superlattices

    International Nuclear Information System (INIS)

    El Tahan, Ayman Mohamed Moussa

    2010-01-01

    occurrence of a crossover from elastic (collective) vortex creep at low temperature to plastic vortex creep at high T. The second type of transport experiments was to measure directly a possible Josephson coupling between superconducting CuO 2 double planes in the superlattices by investigation of the transport properties perpendicular to the superconducting planes. Here three different experiments have been performed. The first one was to pattern mesa structures photolithographically as in previous works. The second used three-dimensional nanostructures cut by a focused ion beam. A third experiment used a-axis and (110) oriented YBCO films, where in-plane patterning can in principle be sufficient to measure transport perpendicular to the superconducting planes. Therefore the deposition of films with this unusual growth orientation was optimized and investigated. The structural and microstructural evolution of c-axis to a-axis orientation was monitored using X-ray diffraction, scanning electron microscopy and magnetization measurements. Films with full a-axis alignment parallel to the substrate normal could be achieved on (100)SrTiO 3 . Transferring the deposition conditions to films grown on (110)SrTiO 3 allowed the growth of (110) oriented YBCO films with a unique in-plane c-axis orientation. While these films were of high quality by crystallographic and macroscopic visual inspection, electron microscopy revealed a coherent crack pattern on a nanoscale. (orig.)

  12. Ge/SiGe superlattices for nanostructured thermoelectric modules

    International Nuclear Information System (INIS)

    Chrastina, D.; Cecchi, S.; Hague, J.P.; Frigerio, J.; Samarelli, A.; Ferre–Llin, L.; Paul, D.J.; Müller, E.; Etzelstorfer, T.; Stangl, J.; Isella, G.

    2013-01-01

    Thermoelectrics are presently used in a number of applications for both turning heat into electricity and also for using electricity to produce cooling. Mature Si/SiGe and Ge/SiGe heteroepitaxial growth technology would allow highly efficient thermoelectric materials to be engineered, which would be compatible and integrable with complementary metal oxide silicon micropower circuits used in autonomous systems. A high thermoelectric figure of merit requires that electrical conductivity be maintained while thermal conductivity is reduced; thermoelectric figures of merit can be improved with respect to bulk thermoelectric materials by fabricating low-dimensional structures which enhance the density of states near the Fermi level and through phonon scattering at heterointerfaces. We have grown and characterized Ge-rich Ge/SiGe/Si superlattices for nanofabricated thermoelectric generators. Low-energy plasma-enhanced chemical vapor deposition has been used to obtain nanoscale-heterostructured material which is several microns thick. Crystal quality and strain control have been investigated by means of high resolution X-ray diffraction. High-resolution transmission electron microscopy images confirm the material and interface quality. Electrical conductivity has been characterized by the mobility spectrum technique. - Highlights: ► High-quality Ge/SiGe multiple quantum wells for thermoelectric applications ► Mobility spectra of systems featuring a large number of parallel conduction channels ► Competitive thermoelectric properties measured in single devices

  13. Spontaneous Superlattice Formation in Nanorods through PartialCation Exchange

    Energy Technology Data Exchange (ETDEWEB)

    Robinson, Richard D.; Sadtler, Bryce; Demchenko, Denis O.; Erdonmez, Can K.; Wang, Lin-Wang; Alivisatos, A. Paul

    2007-03-14

    Lattice mismatch strains are widely known to controlnanoscale pattern formation in heteroepitaxy, but such effects have notbeen exploited in colloidal nanocrystal growth. We demonstrate acolloidal route to synthesizing CdS-Ag2S nanorod superlattices throughpartial cation exchange. Strain induces the spontaneous formation ofperiodic structures. Ab initio calculations of the interfacial energy andmodeling of strain energies show that these forces drive theself-organization. The nanorod superlattices exhibit high stabilityagainst ripening and phase mixing. These materials are tunablenear-infrared emitters with potential applications as nanometer-scaleoptoelectronic devices.

  14. Auger electron spectroscopy analysis of high metal content micro-structures grown by electron beam induced deposition

    International Nuclear Information System (INIS)

    Cicoira, F.; Hoffmann, P.; Olsson, C.O.A.; Xanthopoulos, N.; Mathieu, H.J.; Doppelt, P.

    2005-01-01

    An auger electron spectroscopy study was carried out on Rh-containing micro-structures grown by electron beam induced deposition (EBID) of the iso-structural and iso-electronic precursors [RhCl(PF 3 ) 2 ] 2 and [RhCl(CO) 2 ] 2 . A material containing between 55 and 60 at.% Rh was obtained from both precursors. The chemical composition of structures grown from the two different precursors indicates a similar decomposition mechanism. Deposits grown from [RhCl(PF 3 ) 2 ] 2 showed a chemical composition independent of electron energy and electron dose in the investigated range of conditions

  15. Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models.

    Science.gov (United States)

    Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S

    2013-08-21

    In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.

  16. Molecular Dynamic Simulation of Space and Earth-Grown Crystal Structures of Thermostable T1 Lipase Geobacillus zalihae Revealed a Better Structure.

    Science.gov (United States)

    Ishak, Siti Nor Hasmah; Aris, Sayangku Nor Ariati Mohamad; Halim, Khairul Bariyyah Abd; Ali, Mohd Shukuri Mohamad; Leow, Thean Chor; Kamarudin, Nor Hafizah Ahmad; Masomian, Malihe; Rahman, Raja Noor Zaliha Raja Abd

    2017-09-25

    Less sedimentation and convection in a microgravity environment has become a well-suited condition for growing high quality protein crystals. Thermostable T1 lipase derived from bacterium Geobacillus zalihae has been crystallized using the counter diffusion method under space and earth conditions. Preliminary study using YASARA molecular modeling structure program for both structures showed differences in number of hydrogen bond, ionic interaction, and conformation. The space-grown crystal structure contains more hydrogen bonds as compared with the earth-grown crystal structure. A molecular dynamics simulation study was used to provide insight on the fluctuations and conformational changes of both T1 lipase structures. The analysis of root mean square deviation (RMSD), radius of gyration, and root mean square fluctuation (RMSF) showed that space-grown structure is more stable than the earth-grown structure. Space-structure also showed more hydrogen bonds and ion interactions compared to the earth-grown structure. Further analysis also revealed that the space-grown structure has long-lived interactions, hence it is considered as the more stable structure. This study provides the conformational dynamics of T1 lipase crystal structure grown in space and earth condition.

  17. Electronic structure analysis of GaN films grown on r- and a-plane sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Mishra, Monu; Krishna TC, Shibin; Aggarwal, Neha [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Vihari, Saket [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Gupta, Govind, E-mail: govind@nplindia.org [Physics of Energy Harvesting Division, CSIR-National Physical Laboratory (CSIR-NPL), Dr. K.S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Marg, New Delhi 110012 (India)

    2015-10-05

    Graphical abstract: Substrate orientation induced changes in surface chemistry, band bending, hybridization states, electronic properties and surface morphology of epitaxially grown GaN were investigated via photoemission spectroscopic and Atomic Force Microscopic measurements. - Highlights: • Electronic structure and surface properties of GaN film grown on r/a-plane sapphire. • Downward band bending (0.5 eV) and high surface oxide is observed for GaN/a-sapphire. • Electron affinity and ionization energy is found to be higher for GaN/a-sapphire. - Abstract: The electronic structure and surface properties of epitaxial GaN films grown on r- and a-plane sapphire substrates were probed via spectroscopic and microscopic measurements. X-ray photoemission spectroscopic (XPS) measurements were performed to analyse the surface chemistry, band bending and valence band hybridization states. It was observed that GaN/a-sapphire display a downward band bending of 0.5 eV and possess higher amount of surface oxide compared to GaN/r-sapphire. The valence band (VB) investigation revealed that the hybridization corresponds to the interactions of Ga 4s and Ga 4p orbitals with N 2p orbital, and result in N2p–Ga4p, N2p–Ga4s{sup ∗}, mixed and N2p–Ga4s states. The energy band structure and electronic properties were measured via ultraviolet photoemission spectroscopic (UPS) experiments. The band structure analysis and electronic properties calculations divulged that the electron affinity and ionization energy of GaN/a-sapphire were 0.3 eV higher than GaN/r-sapphire film. Atomic Force Microscopic (AFM) measurements revealed faceted morphology of GaN/r-sapphire while a smooth pitted surface was observed for GaN/a-sapphire film, which is closely related to surface oxide coverage.

  18. Structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy

    Science.gov (United States)

    Kanzyuba, Vasily; Dong, Sining; Liu, Xinyu; Li, Xiang; Rouvimov, Sergei; Okuno, Hanako; Mariette, Henri; Zhang, Xueqiang; Ptasinska, Sylwia; Tracy, Brian D.; Smith, David J.; Dobrowolska, Margaret; Furdyna, Jacek K.

    2017-02-01

    We describe the structural evolution of dilute magnetic (Sn,Mn)Se films grown by molecular beam epitaxy on GaAs (111) substrates, as revealed by transmission electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy. When the Mn concentration is increased, the lattice of the ternary (Sn,Mn)Se films evolves quasi-coherently from a SnSe2 two-dimensional (2D) crystal structure into a more complex quasi-2D lattice rearrangement, ultimately transforming into the magnetically concentrated antiferromagnetic MnSe 3D rock-salt structure as Mn approaches 50 at. % of this material. These structural transformations are expected to underlie the evolution of magnetic properties of this ternary system reported earlier in the literature.

  19. Localization in superlattices with randomness in layer thickness

    International Nuclear Information System (INIS)

    Yuan Jian; Tsai Chienhua.

    1987-08-01

    The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

  20. Recent results on heterojunctions and superlattices: transport and optics

    International Nuclear Information System (INIS)

    Voos, M.

    1983-01-01

    Recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices are presented. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (Author) [pt

  1. Ab Initio factorized LCAO calculations of the electronic band structure of ZnSe, ZnS, and the (ZnSe)1(ZnS)1 strained-layer superlattice

    International Nuclear Information System (INIS)

    Marshall, T.S.; Wilson, T.M.

    1992-01-01

    The authors report on the results of electronic band structure calculations of bulk ZnSe, bulk ZnS and the (ZnSe) 1 (ZnS) 1 , strained-layer superlattice (SLS) using the ab initio factorized linear combination of atomic orbitals method. The bulk calculations were done using the standard primitive nonrectangular 2-atom zinc blende unit cell, while the SLS calculation was done using a primitive tetragonal 4-atom unit cell modeled from the CuAu I structure. The analytic fit to the SLS crystalline potential was determined by using the nonlinear coefficients from the bulk fits. The CPU time saved by factorizing the energy matrix integrals and using a rectangular unit cell is discussed

  2. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  3. Defect Structure of High-Temperature-Grown GaMnSb/GaSb

    International Nuclear Information System (INIS)

    Romanowski, P.; Bak-Misiuk, J.; Dynowska, E.; Domagala, J.Z.; Wojciechowski, T.; Jakiela, R.; Sadowski, J.; Barcz, A.; Caliebe, W.

    2010-01-01

    GaMnSb/GaSb(100) layers with embedded MnSb inclusions have been grown at 720 K using MBE technique. This paper presents the investigation of the defect structure of Ga1-xMnxSb layers with different content of manganese (up to x = 0.07). X-ray diffraction method using conventional and synchrotron radiation was applied. Dimensions and shapes of inclusions were detected by scanning electron microscopy. Depth profiles of elements were measured using secondary ion mass spectroscopy technique. (authors)

  4. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Karuppasamy, A., E-mail: karuppasamy@psnacet.edu.in

    2015-12-30

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO{sub 3} (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO{sub 3}) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O{sub 2} atmosphere. Ti:WO{sub 3} thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10{sup −3}–5.0 × 10{sup −3} mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm{sup 2}) and tungsten (3 W/cm{sup 2}) were kept constant. Ti:WO{sub 3} films deposited at an oxygen pressure of 5 × 10{sup −3} mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm{sup 2}/C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm{sup 2}, Qa: 17.72 mC/cm{sup 2}), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO{sub 3} films.

  5. Electrochromism and photocatalysis in dendrite structured Ti:WO3 thin films grown by sputtering

    International Nuclear Information System (INIS)

    Karuppasamy, A.

    2015-01-01

    Graphical abstract: - Highlights: • Dendrite structured Ti doped WO 3 (WTO) thin films are grown by co-sputtering. • Sputtering condition influences structure and surface morphology of WTO films. • Titanium doping and annealing lead to dendritic surface structures in WTO films. • Structural, optical, electrochromic and photocatalytic properties of WTO films. • Enhanced electrochromism and photocatalysis in dendrite structured WTO thin films. - Abstract: Titanium doped tungsten oxide (Ti:WO 3 ) thin films with dendrite surface structures were grown by co-sputtering titanium and tungsten in Ar + O 2 atmosphere. Ti:WO 3 thin films were deposited at oxygen flow rates corresponding to pressures in the range 1.0 × 10 −3 –5.0 × 10 −3 mbar. Argon flow rate and sputtering power densities for titanium (2 W/cm 2 ) and tungsten (3 W/cm 2 ) were kept constant. Ti:WO 3 films deposited at an oxygen pressure of 5 × 10 −3 mbar are found to be better electrochromic and photocatalytic. They have high optical modulation (80% at λ = 550 nm), coloration efficiency (60 cm 2 /C at λ = 550 nm), electron/ion storage and removal capacity (Qc: −22.01 mC/cm 2 , Qa: 17.72 mC/cm 2 ), reversibility (80%) and methylene blue decomposition rate (−1.38 μmol/l d). The combined effects of titanium doping, dendrite surface structures and porosity leads to significant enhancement in the electrochromic and photocatalytic properties of Ti:WO 3 films.

  6. Perovskite Superlattices as Tunable Microwave Devices

    Science.gov (United States)

    Christen, H. M.; Harshavardhan, K. S.

    2003-01-01

    Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.

  7. Electronic states in tunneling semiconductor superlattices: Technical progress report for the period September 15, 1987-September 14, 1988

    International Nuclear Information System (INIS)

    Ulloa, S.E.

    1988-01-01

    This research project funded by DOE has concentrated in the systematic study of the effects of a gate voltage on the electronic structure of a tunneling superlattice system. The effects of strong magnetic fields and other various parameters on energy levels of tunneling superlattices have been investigated

  8. Morphology and Structural Characterization of Carbon Nanowalls Grown via VHF-PECVD

    Science.gov (United States)

    Akmal Hasanudin, M.; Wahab, Y.; Ismail, A. K.; Zahid Jamal, Z. A.

    2018-03-01

    A 150 MHz very high frequency plasma enhanced chemical vapor deposition (150 MHz VHF-PECVD) system was utilized to fabricate two-dimensional carbon nanostructure from the mixture of methane and hydrogen. Morphology and structural properties of the grown nanostructure were investigated by FESEM imaging and Raman spectroscopy. Carbon nanowalls (CNW) with dense and wavy-like structure were successfully synthesized. The wavy-like morphology of CNW was found to be more distinct during growth at small electrode spacing and denser with increasing deposition time due to better flux of hydrocarbon radicals to the substrate and higher rate of reaction, respectively. Typical characteristics of CNW were observed from strong D band, narrow bandwidth of G band and single broad peak of 2D band of Raman spectra indicating the presence of disordered nanocrystalline graphite structure with high degree of graphitization.

  9. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  10. Structural, morphological and electronic properties of pulsed laser grown Eu2O3 thin films

    Science.gov (United States)

    Kumar, Sandeep; Prakash, Ram; Choudhary, R. J.; Phase, D. M.

    2018-05-01

    Herein, we report the growth, structural, morphological and electronic properties of Europium sesquioxide (Eu2O3) thin films on Si [1 0 0] substrate using pulsed laser deposition technique. The films were deposited at ˜750 °C substrate temperature while the oxygen partial pressure (OPP) was varied (vacuum,˜1 mTorr, ˜10 mTorr and ˜300 mTorr). X-ray diffraction results confirm the single phase cubic structure of the film grown at ˜300 mTorr. The XRD results are also supported by the Raman's spectroscopy results. Eu-3d XPS core level spectra confirms the dominant contributions from the "3+" states of Eu in the film.

  11. Surface and interfacial structural characterization of MBE grown Si/Ge multilayers

    International Nuclear Information System (INIS)

    Saha, Biswajit; Sharma, Manjula; Sarma, Abhisakh; Rath, Ashutosh; Satyam, P.V.; Chakraborty, Purushottam; Sanyal, Milan K.

    2009-01-01

    Si/Ge multilayer structures have been grown by solid source molecular beam epitaxy (MBE) on Si (1 1 1) and (1 0 0) substrates and were characterized by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), high-depth-resolution secondary ion mass spectroscopy (SIMS) and cross-section high-resolution transmission electron microscopy (HRTEM). A reasonably good agreement has been obtained for layer thickness, interfacial structure and diffusion between SIMS and HRTEM measurements. Epitaxial growth and crystalline nature of the individual layer have been probed using cross-sectional HRTEM and XRD measurements. Surface and interface morphological studies by AFM and HRTEM show island-like growth of both Si and Ge nanostructures.

  12. Structural properties and gas sensing behavior of sol-gel grown nanostructured zinc oxide

    Energy Technology Data Exchange (ETDEWEB)

    Rajyaguru, Bhargav; Gadani, Keval; Kansara, S. B.; Pandya, D. D.; Shah, N. A.; Solanki, P. S., E-mail: piyush.physics@gmail.com [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); Rathod, K. N.; Solanki, Sapana [Department of Physics, Saurashtra University, Rajkot – 360 005 (India); V.V.P. Engineering College, Gujarat Technological University, Rajkot – 360 005 (India)

    2016-05-06

    In this communication, we report the results of the studies on structural properties and gas sensing behavior of nanostructured ZnO grown using acetone precursor based modified sol-gel technique. Final product of ZnO was sintered at different temperatures to vary the crystallite size while their structural properties have been studied using X-ray diffraction (XRD) measurement performed at room temperature. XRD results suggest the single phasic nature of all the samples and crystallite size increases from 11.53 to 20.96 nm with increase in sintering temperature. Gas sensing behavior has been studied for acetone gas which indicates that lower sintered samples are more capable to sense the acetone gas and related mechanism has been discussed in the light of crystallite size, crystal boundary density, defect mechanism and possible chemical reaction between gas traces and various oxygen species.

  13. Phonon-induced optical superlattice.

    Science.gov (United States)

    de Lima, M M; Hey, R; Santos, P V; Cantarero, A

    2005-04-01

    We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

  14. GeTe sequences in superlattice phase change memories and their electrical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ohyanagi, T., E-mail: ohyanagi@leap.or.jp; Kitamura, M.; Takaura, N. [Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan); Araidai, M. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kato, S. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Shiraishi, K. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2014-06-23

    We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.

  15. Morphology evolution of hydrothermally grown ZnO nanostructures on gallium doping and their defect structures

    Energy Technology Data Exchange (ETDEWEB)

    Pineda-Hernandez, G. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Escobedo-Morales, A., E-mail: alejandroescobedo@hotmail.com [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico); Pal, U. [Instituto de Fisica, Benemerita Universidad Autonoma de Puebla, Apdo. Postal J-48, C.P. 72570 Puebla, Pue. (Mexico); Chigo-Anota, E. [Facultad de Ingenieria Quimica, Benemerita Universidad Autonoma de Puebla, C.P. 72570 Puebla, Pue. (Mexico)

    2012-08-15

    In the present article, the effect of gallium doping on the morphology, structural, and vibrational properties of hydrothermally grown ZnO nanostructures has been studied. It has been observed that incorporated gallium plays an important role on the growth kinetics and hence on the morphology evolution of the ZnO crystals. Ga doping in high concentration results in the contraction of ZnO unit cell, mainly along c-axis. Although Ga has high solubility in ZnO, heavy doping promotes the segregation of Ga atoms as a secondary phase. Incorporated Ga atoms strongly affect the vibrational characteristics of ZnO lattice and induce anomalous Raman modes. Possible mechanisms of morphology evolution and origin of anomalous Raman modes in Ga doped ZnO nanostructures are discussed. -- Highlights: Black-Right-Pointing-Pointer Ga doped ZnO nanostructures were successfully grown by hydrothermal chemical route. Black-Right-Pointing-Pointer Ga doping has strong effect on the resulting morphology of ZnO nanostructures. Black-Right-Pointing-Pointer Anomalous vibrational modes in wurtzite ZnO lattice are induced by Ga doping. Black-Right-Pointing-Pointer Incorporated Ga atoms accommodate at preferential lattice sites.

  16. The Crystal structure of InAs nanorods grown onto Si[111] substrate

    Energy Technology Data Exchange (ETDEWEB)

    Davydok, Anton; Biermanns, Andreas; Pietsch, Ullrich [Festkoerperphysik, Universitaet Siegen, Walter-Flex-Str. 3,57072, Siegen (Germany); Breuer, Steffen; Dimakis, Manos; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-07-01

    Nanowires are of particular interest due to the ability to synthesize heterostructures in the nanometer range. It was found that nearly any AIIIBV semiconductor material can be grown as NWs onto another AIIIBV or group IV [111] substrate independent from lattice mismatch. We presented an X-ray characterization of InAs NRs on Si [111] grown by assist free MBE method. Lattice mismatch of this materials is 11%. For study of strain realizing we concentrated our research on initial stages of growth process investigating samples set with different growth time. Using synchrotron radiation we have performed experiments in symmetrical and asymmetrical out-of plane scattering geometry and grazing-incidence diffraction. Combining the results we were able to characterize the transition between silicon silicon substrate and InAs NWs. We find in-plane lattice mismatch of -0.18% close to the interface compared to InAs bulk material. With help of micro-focus setup we are able measure structural parameters of single NWs to determine the strain accomodation as function of NW size. In particular using asymmetric wurzite-sensitive reflections under coherent beam illumination we could quantify the number of stacking faults. In the talk we present details of the analysis and first simulation results.

  17. Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

    International Nuclear Information System (INIS)

    Wang Longxiang; Yang Xiangbo; Chen Tongsheng

    2009-01-01

    In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

  18. Chemical and structural properties of polymorphous silicon thin films grown from dichlorosilane

    Energy Technology Data Exchange (ETDEWEB)

    Álvarez-Macías, C.; Monroy, B.M.; Huerta, L.; Canseco-Martínez, M.A. [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico); Picquart, M. [Departamento de Física, Universidad Autónoma Metropolitana, Iztapalapa, A.P. 55-534, 09340 México, D.F. (Mexico); Santoyo-Salazar, J. [Departamento de Física, CINVESTAV-IPN, A.P. 14-740, C.P. 07000 México, D.F. (Mexico); Sánchez, M.F. García [Unidad Profesional Interdisciplinaria en Ingeniería y Tecnologías Avanzadas, Instituto Politécnico Nacional, Av. I.P.N. 2580, Gustavo A. Madero, 07340 México .D.F. (Mexico); Santana, G., E-mail: gsantana@iim.unam.mx [Instituto de Investigaciones en Materiales, Universidad Nacional Autónoma de México, A.P. 70-360, Coyoacán, C.P. 04510 México, D.F. (Mexico)

    2013-11-15

    We have examined the effects of hydrogen dilution (R{sub H}) and deposition pressure on the morphological, structural and chemical properties of polymorphous silicon thin films (pm-Si:H), using dichlorosilane as silicon precursor in the plasma enhanced chemical vapor deposition (PECVD) process. The use of silicon chlorinated precursors enhances the crystallization process in as grown pm-Si:H samples, obtaining crystalline fractions from Raman spectra in the range of 65–95%. Atomic Force Microscopy results show the morphological differences obtained when the chlorine chemistry dominates the growth process and when the plasma–surface interactions become more prominent. Augmenting R{sub H} causes a considerable reduction in both roughness and topography, demonstrating an enhancement of ion bombardment and attack of the growing surface. X-ray Photoelectron Spectroscopy results show that, after ambient exposure, there is low concentration of oxygen inside the films grown at low R{sub H}, present in the form of Si-O, which can be considered as structural defects. Instead, oxidation increases with deposition pressure and dilution, along with film porosity, generating a secondary SiO{sub x} phase. For higher pressure and dilution, the amount of chlorine incorporated to the film decreases congruently with HCl chlorine extraction processes involving atomic hydrogen interactions with the surface. In all cases, weak silicon hydride (Si-H) bonds were not detected by infrared spectroscopy, while bonding configurations associated to the silicon nanocrystal surface were clearly observed. Since these films are generally used in photovoltaic devices, analyzing their chemical and structural properties such as oxygen incorporation to the films, along with chlorine and hydrogen, is fundamental in order to understand and optimize their electrical and optical properties.

  19. Morphology and oxide shell structure of iron nanoparticles grown by sputter-gas-aggregation

    International Nuclear Information System (INIS)

    Wang, C M; Baer, D R; Amonette, J E; Engelhard, M H; Qiang, Y; Antony, J

    2007-01-01

    The crystal faceting planes and oxide coating structures of core-shell structured iron/iron-oxide nanoparticles synthesized by a sputter-gas-aggregation process were studied using transmission electron microscopy (TEM), electron diffraction and Wulff shape construction. The particles grown by this process and deposited on a support in a room temperature process have been compared with particles grown and deposited at high temperature as reported in the literature. It has been found that the Fe nanoparticles formed at RT are invariantly faceted on the {100} lattice planes and truncated by the {110} planes at different degrees. A substantial fraction of particles are confined only by the 6{100} planes (not truncated by the {110} planes); this contrasts with the Fe particles formed at high temperature (HT) for which a predominance of {110} planes has been reported. Furthermore, at RT no particle was identified to be only confined by the 12{110} planes, which is relatively common for the particles formed at HT. The Fe cubes defined by the 6{100} planes show a characteristic inward relaxation along the and directions and the reason for this behaviour is not fully understood. The oxide shell on the Fe{100} plane maintains an orientation relationship: Fe(001) parallel Fe 3 O 4 (001) and Fe[100] parallel Fe 3 O 4 [110], which is the same as the oxide formed on a bulk Fe(001) through thermal oxidation. Orientation of the oxide that forms on the Fe{110} facets differs from that on Fe{001}: therefore, properties of core-shell structured Fe nanoparticle faceted primarily with one type of lattice plane may be fully different from that faceted with another type of lattice plane

  20. Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

    2015-06-15

    Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  1. Magnetic profiles in ferromagnetic/superconducting superlattices.

    Energy Technology Data Exchange (ETDEWEB)

    te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

    2007-02-28

    The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

  2. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Wagener, Viera, E-mail: viera.wagener@nmmu.ac.z [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa); Olivier, E.J.; Botha, J.R. [Physics Department, Nelson Mandela Metropolitan University, PO Box 77000, Port Elizabeth 6031 (South Africa)

    2009-12-15

    This paper reports on the optical and structural properties of strained type-I Ga{sub 1-x}In{sub x}Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga{sub 1-x}In{sub x}Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (approx2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  3. Optical and structural characterisation of epitaxial nanoporous GaN grown by CVD.

    Science.gov (United States)

    Mena, Josué; Carvajal, Joan J; Martínez, Oscar; Jiménez, Juan; Zubialevich, Vitaly Z; Parbrook, Peter J; Diaz, Francesc; Aguiló, Magdalena

    2017-09-15

    In this paper we study the optical properties of nanoporous gallium nitride (GaN) epitaxial layers grown by chemical vapour deposition on non-porous GaN substrates, using photoluminescence, cathodoluminescence, and resonant Raman scattering, and correlate them with the structural characteristic of these films. We pay special attention to the analysis of the residual strain of the layers and the influence of the porosity in the light extraction. The nanoporous GaN epitaxial layers are under tensile strain, although the strain is progressively reduced as the deposition time and the thickness of the porous layer increases, becoming nearly strain free for a thickness of 1.7 μm. The analysis of the experimental data point to the existence of vacancy complexes as the main source of the tensile strain.

  4. Optical and structural properties of MOVPE-grown GaInSb/GaSb quantum wells

    International Nuclear Information System (INIS)

    Wagener, Viera; Olivier, E.J.; Botha, J.R.

    2009-01-01

    This paper reports on the optical and structural properties of strained type-I Ga 1-x In x Sb quantum wells embedded in GaSb from a metal-organic vapour phase epitaxial growth perspective. Photoluminescence measurements and transmission electron microscopy were used to evaluate the effect of the growth temperature on the quality of Ga 1-x In x Sb strained layers with varied alloy compositions and thicknesses. Although the various factors contributing to the overall quality of the strained layers are difficult to separate, the quantum well characteristics are significantly altered by the growth temperature. Despite the high growth rates (∼2 nm/s), quantum wells grown at 607 deg. C display photoluminescence emissions with full-width at half-maximum of 3.5-5.0 meV for an indium solid content (x) up to 0.15.

  5. Magnetic and structural properties of Co2FeAl thin films grown on Si substrate

    International Nuclear Information System (INIS)

    Belmeguenai, Mohamed; Tuzcuoglu, Hanife; Gabor, Mihai; Petrisor, Traian; Tiusan, Coriolan; Berling, Dominique; Zighem, Fatih; Mourad Chérif, Salim

    2015-01-01

    The correlation between magnetic and structural properties of Co 2 FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO 2 substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm 2 . - Highlights: • Various Co 2 FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness

  6. Low temperature synthesis of Mo2C/W2C superlattices via ultra-thin modulated reactants

    International Nuclear Information System (INIS)

    Johnson, C.D.; Johnson, D.C.

    1996-01-01

    The authors report here a synthesis method of preparing carbide superlattices using ultra-thin modulated reactants. Initial investigations into the synthesis of the binary systems, Mo 2 C and W 2 C using ultra-thin modulated reactants revealed that both can be formed at relatively low temperatures (500 and 600 C respectively). DSC and XRD data suggested a two step reaction pathway involving interdiffusion of the initial modulated reactant followed by crystallization of the final product, if the modulation length is on the order of 10 angstrom. This information was used to form Mo 2 C/W 2 C superlattices using the structure of the ultra-thin modulated reactant to control the final superlattice period. Relatively large superlattice modulations were kinetically trapped by having several repeat units of each binary within the total repeat of the initial reactant. DSC and XRD data again are consistent with a two step reaction pathway leading to the formation of carbide superlattices

  7. Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    International Nuclear Information System (INIS)

    Min, Li; Xian-Wu, Mi

    2009-01-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

    Science.gov (United States)

    Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

    1987-06-08

    A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

  9. Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

    International Nuclear Information System (INIS)

    Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

    2006-01-01

    New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500mAh, AAA size type 900mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material. alized by using an improved superlattice alloy for negative electrode material. (author)

  10. Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices

    Directory of Open Access Journals (Sweden)

    James (Zi-Jian Ju

    2016-04-01

    Full Text Available The thermoelectric properties of n-type InGaN alloys with high In-content and InN/InGaN thin film superlattices (SL grown by molecular beam epitaxy are investigated. Room-temperature measurements of the thermoelectric properties reveal that an increasing Ga-content in ternary InGaN alloys (0 < x(Ga < 0.2 yields a more than 10-fold reduction in thermal conductivity (κ without deteriorating electrical conductivity (σ, while the Seebeck coefficient (S increases slightly due to a widening band gap compared to binary InN. Employing InN/InGaN SLs (x(Ga = 0.1 with different periods, we demonstrate that confinement effects strongly enhance electron mobility with values as high as ∼820 cm2/V s at an electron density ne of ∼5×1019 cm−3, leading to an exceptionally high σ of ∼5400 (Ωcm−1. Simultaneously, in very short-period SL structures S becomes decoupled from ne, κ is further reduced below the alloy limit (κ < 9 W/m-K, and the power factor increases to 2.5×10−4 W/m-K2 by more than a factor of 5 as compared to In-rich InGaN alloys. These findings demonstrate that quantum confinement in group-III nitride-based superlattices facilitates improvements of thermoelectric properties over bulk-like ternary nitride alloys.

  11. Interfaces in Si/Ge atomic layer superlattices on (001)Si: Effect of growth temperature and wafer misorientation

    Science.gov (United States)

    Baribeau, J.-M.; Lockwood, D. J.; Syme, R. W. G.

    1996-08-01

    We have used x-ray diffraction, specular reflectivity, and diffuse scattering, complemented by Raman spectroscopy, to study the interfaces in a series of (0.5 nm Ge/2 nm Si)50 atomic layer superlattices on (001)Si grown by molecular beam epitaxy in the temperature range 150-650 °C. X-ray specular reflectivity revealed that the structures have a well-defined periodicity with interface widths of about 0.2-0.3 nm in the 300-590 °C temperature range. Offset reflectivity scans showed that the diffuse scattering peaks at values of perpendicular wave vector transfer corresponding to the superlattice satellite peaks, indicating that the interfaces are vertically correlated. Transverse rocking scans of satellite peaks showed a diffuse component corresponding to an interface corrugation of typical length scale of ˜0.5 μm. The wavelength of the undulations is a minimum along the miscut direction and is typically 30-40 times larger than the surface average terrace width assuming monolayer steps, independently of the magnitude of the wafer misorientation. The amplitude of the undulation evolves with growth temperature and is minimum for growth at ˜460 °C and peaks at ˜520 °C. Raman scattering showed the chemical abruptness of the interfaces at low growth temperatures and indicated a change in the growth mode near 450 °C.

  12. Electronic excitation induced structural and optical modifications in InGaN/GaN quantum well structures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Prabakaran, K.; Ramesh, R.; Jayasakthi, M.; Surender, S.; Pradeep, S. [Crystal Growth Centre, Anna University, Chennai (India); Balaji, M. [National Centre for Nanoscience and Nanotechnology, University of Madras, Guindy Campus, Chennai (India); Asokan, K. [Inter-University Accelerator Centre, New Delhi (India); Baskar, K., E-mail: drbaskar2009@gmail.com [Crystal Growth Centre, Anna University, Chennai (India); Manonmaniam Sundaranar University, Tirunelveli (India)

    2017-03-01

    Highlights: • Effects on InGaN/GaN QW structures by Au{sup 7+} (100 MeV) ion have been investigated. • Structural defects of the irradiated InGaN/GaN QW structures are determined. • The intermixing effect in irradiated InGaN/GaN QW structures were understood. • Modified luminescence was observed in the PL spectra due to heavy ion irradiation. • Surface modification was observed due to the heavy ion irradiation. - Abstract: The present study focuses on the electronic excitation induced structural and optical properties of InGaN/GaN quantum well (QW) structures grown by metal organic chemical vapor deposition technique. These excitations were produced using Au{sup 7+} ion irradiation with 100 MeV energy. The X-ray rocking curves intensity and full width at half-maximum values corresponding to the planes of (0 0 0 2) and (1 0 −1 5) of the irradiated QW structures show the modifications in the screw and edge-type dislocation densities vary with the ion fluences. The structural characteristics using the reciprocal space mapping indicate the intermixing effects in InGaN/GaN QW structures. Atomic force microscopy images confirmed the presence of nanostructures and the surface modification due to heavy ion irradiation. The irradiated QW structures exhibited degraded photoluminescence intensity and a subsequent decrease in the yellow luminescence band intensity with the fluences of 1 × 10{sup 11} and 5 × 10{sup 12} ions/cm{sup 2} compared to the pristine QW structures.

  13. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

    International Nuclear Information System (INIS)

    Pavelyev, D. G.; Vasilev, A. P.; Kozlov, V. A.; Koschurinov, Yu. I.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.

    2016-01-01

    The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

  14. Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

    Science.gov (United States)

    Malguth, E.; Hoffmann, A.; Phillips, M. R.

    2008-12-01

    We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5×1017, 1×1018, 1×1019, and 2×1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal T41(G)-A61(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectively.

  15. Electronic structures of GeSi nanoislands grown on pit-patterned Si(001 substrate

    Directory of Open Access Journals (Sweden)

    Han Ye

    2014-11-01

    Full Text Available Patterning pit on Si(001 substrate prior to Ge deposition is an important approach to achieve GeSi nanoislands with high ordering and size uniformity. In present work, the electronic structures of realistic uncapped pyramid, dome, barn and cupola nanoislands grown in {105} pits are systematically investigated by solving Schrödinger equation for heavy-hole, which resorts to inhomogeneous strain distribution and nonlinear composition-dependent band parameters. Uniform, partitioned and equilibrium composition profile (CP in nanoisland and inverted pyramid structure are simulated separately. We demonstrate the huge impact of composition profile on localization of heavy-hole: wave function of ground state is confined near pit facets for uniform CP, at bottom of nanoisland for partitioned CP and at top of nanoisland for equilibrium CP. Moreover, such localization is gradually compromised by the size effect as pit filling ratio or pit size decreases. The results pave the fundamental guideline of designing nanoislands on pit-patterned substrates for desired applications.

  16. Structural characterization of Fe−Pd nanowires grown by electrodeposition using an acid electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Domenichini, P. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Condó, A.M. [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Haberkorn, N., E-mail: nhaberk@cab.cnea.gov.ar [Instituto Balseiro, Universidad Nacional de Cuyo, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina); Centro Atómico Bariloche, Comisión Nacional de Energía Atómica, Av. Bustillo 9500, 8400 San Carlos de Bariloche (Argentina)

    2016-07-01

    Fe{sub 70}Pd{sub 30} nanostructures have potential application in actuators due to their conventional and magnetic shape memory. Here, we report the microstructure of electrodeposition grown Fe−Pd nanowires in which the process was confined to polycarbonate membranes with a nominal pore diameter of 200 nm. We used an acid electrolyte (pH ≈ 5) in which the solution was stabilized with sulfosalicylic acid. The average chemical concentration of the nanowires can be systematically shifted from rich palladium to rich iron by changing the growth potential. The study of the microstructure by transmission electron microscopy indicates high chemical inhomogeneities due to phase coexistence between rich palladium regions (with FCC structure) and rich iron regions. The latter present a combination of BCC and amorphous phases. The average chemical composition of the nanowires can be better adjusted by using a low frequency square wave voltage excitation (alternating rich Pd and rich Fe regions). However, independently of the growth process, the nanowires morphology collapses after thermal annealing. This could be ascribed to fragile grain boundaries due to the presence of amorphous hydroxides and chemical impurities produced during the electrochemical process. - Highlights: • Synthesis of Fe−Pd nanowires by electrodeposition is reported. • Structural characterization of the nanowires by transmission electron microscopy. • The synthesis of nanowires with austenitic phase is limited by fragile grain boundaries.

  17. Impact of Nutrient Restriction on the Structure of Listeria monocytogenes Biofilm Grown in a Microfluidic System

    Science.gov (United States)

    Cherifi, Tamazight; Jacques, Mario; Quessy, Sylvain; Fravalo, Philippe

    2017-01-01

    Biofilm formation by the pathogen Listeria monocytogenes is a major concern in food industries. The aim of this work was to elucidate the effect of nutrient limitation on both biofilm architecture and on the viability of the bacteria in microfluidic growth conditions. Biofilm formation by two L. monocytogenes strains was performed in a rich medium (BHI) and in a 10-fold diluted BHI (BHI/10) at 30°C for 24 h by using both static conditions and the microfluidic system Bioflux. In dynamic conditions, biofilms grown in rich and poor medium showed significant differences as well in structure and in the resulting biovolume. In BHI/10, biofilm was organized in a knitted network where cells formed long chains, whereas in the rich medium, the observed structure was homogeneous cellular multilayers. Biofilm biovolume production in BHI/10 was significantly higher than in BHI in these dynamic conditions. Interestingly, biovolume of dead cells in biofilms formed under limited nutrient conditions (BHI/10) was significantly higher than in biofilms formed in the BHI medium. In the other hand, in static conditions, biofilm is organized in a multilayer cells and dispersed cells in a rich medium BHI and poor medium BHI/10 respectively. There was significantly more biomass in the rich medium compared to BHI/10 but no difference was noted in the dead/damaged subpopulation showing how L. monocytogenes biofilm could be affected by the growth conditions. This work demonstrated that nutrient concentration affects biofilm structure and the proportion of dead cells in biofilms under microfluidic condition. Our study also showed that limited nutrients play an important role in the structural stability of L. monocytogenes biofilm by enhancing cell death and liberating extracellular DNA. PMID:28567031

  18. Impact of Nutrient Restriction on the Structure of Listeria monocytogenes Biofilm Grown in a Microfluidic System

    Directory of Open Access Journals (Sweden)

    Tamazight Cherifi

    2017-05-01

    Full Text Available Biofilm formation by the pathogen Listeria monocytogenes is a major concern in food industries. The aim of this work was to elucidate the effect of nutrient limitation on both biofilm architecture and on the viability of the bacteria in microfluidic growth conditions. Biofilm formation by two L. monocytogenes strains was performed in a rich medium (BHI and in a 10-fold diluted BHI (BHI/10 at 30°C for 24 h by using both static conditions and the microfluidic system Bioflux. In dynamic conditions, biofilms grown in rich and poor medium showed significant differences as well in structure and in the resulting biovolume. In BHI/10, biofilm was organized in a knitted network where cells formed long chains, whereas in the rich medium, the observed structure was homogeneous cellular multilayers. Biofilm biovolume production in BHI/10 was significantly higher than in BHI in these dynamic conditions. Interestingly, biovolume of dead cells in biofilms formed under limited nutrient conditions (BHI/10 was significantly higher than in biofilms formed in the BHI medium. In the other hand, in static conditions, biofilm is organized in a multilayer cells and dispersed cells in a rich medium BHI and poor medium BHI/10 respectively. There was significantly more biomass in the rich medium compared to BHI/10 but no difference was noted in the dead/damaged subpopulation showing how L. monocytogenes biofilm could be affected by the growth conditions. This work demonstrated that nutrient concentration affects biofilm structure and the proportion of dead cells in biofilms under microfluidic condition. Our study also showed that limited nutrients play an important role in the structural stability of L. monocytogenes biofilm by enhancing cell death and liberating extracellular DNA.

  19. Spectral properties of waves in superlattices with 2D and 3D inhomogeneities

    International Nuclear Information System (INIS)

    Ignatchenko, V. A.; Tsikalov, D. S.

    2011-01-01

    We investigate the dynamic susceptibility and one-dimensional density of states in an initially sinusoidal superlattice containing simultaneously 2D phase inhomogeneities simulating correlated rough-nesses of superlattice interfaces and 3D amplitude inhomogeneities of the superlattice layer materials. The analytic expression for the averaged Green’s function of the sinusoidal superlattice with two phase inhomogeneities is derived in the Bourret approximation. It is shown that the effect of increasing asymmetry in the peak heights of dynamic susceptibility at the Brillouin zone boundary of the superlattice, which was discovered earlier [15] upon an increase in root-mean-square (rms) fluctuations, also takes place upon an increase in the correlation wavenumber of inhomogeneities. However, the peaks in this case also become closer, and the width and depth of the gap in the density of states decrease thereby. It is shown that the enhancement of rms fluctuations of 3D amplitude inhomogeneities in a superlattice containing 2D phase inhomogeneities suppresses the effect of dynamic susceptibility asymmetry and leads to a slight broadening of the gap in the density of states and a decrease in its depth. Targeted experiments aimed at detecting the effects studied here would facilitate the development of radio-spectroscopic and optical methods for identifying the presence of inhomogeneities of various dimensions in multilayer magnetic and optical structures.

  20. Tunneling of electrons through semiconductor superlattices

    Indian Academy of Sciences (India)

    Unknown

    Tunneling of electrons through semiconductor superlattices. C L ROY. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semicon- ductor superlattices (SSL); specially, we have ...

  1. Plasmon Modes of Vertically Aligned Superlattices

    DEFF Research Database (Denmark)

    Filonenko, Konstantin; Duggen, Lars; Willatzen, Morten

    2017-01-01

    By using the Finite Element Method we visualize the modes of vertically aligned superlattice composed of gold and dielectric nanocylinders and investigate the emitter-plasmon interaction in approximation of weak coupling. We find that truncated vertically aligned superlattice can function...

  2. Photostimulated attenuation of hypersound in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.; Adjepong, S.K.

    1992-10-01

    Photostimulated attenuation of hypersound in semiconductor superlattice has been investigated. It is shown that the attenuation coefficient depends on the phonon wave vector q in an oscillatory manner and that from this oscillation the band width Δ of superlattice can be found. (author). 14 refs, 1 fig

  3. Type II superlattice technology for LWIR detectors

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

    2016-05-01

    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

  4. Void Structures in Regularly Patterned ZnO Nanorods Grown with the Hydrothermal Method

    Directory of Open Access Journals (Sweden)

    Yu-Feng Yao

    2014-01-01

    Full Text Available The void structures and related optical properties after thermal annealing with ambient oxygen in regularly patterned ZnO nanrorod (NR arrays grown with the hydrothermal method are studied. In increasing the thermal annealing temperature, void distribution starts from the bottom and extends to the top of an NR in the vertical (c-axis growth region. When the annealing temperature is higher than 400°C, void distribution spreads into the lateral (m-axis growth region. Photoluminescence measurement shows that the ZnO band-edge emission, in contrast to defect emission in the yellow-red range, is the strongest under the n-ZnO NR process conditions of 0.003 M in Ga-doping concentration and 300°C in thermal annealing temperature with ambient oxygen. Energy dispersive X-ray spectroscopy data indicate that the concentration of hydroxyl groups in the vertical growth region is significantly higher than that in the lateral growth region. During thermal annealing, hydroxyl groups are desorbed from the NR leaving anion vacancies for reacting with cation vacancies to form voids.

  5. Mosaic Structure Characterization of the AlInN Layer Grown on Sapphire Substrate

    Directory of Open Access Journals (Sweden)

    Engin Arslan

    2014-01-01

    Full Text Available The 150 nm thick, (0001 orientated wurtzite-phase Al1−xInxN epitaxial layers were grown by metal organic chemical vapor deposition on GaN (2.3 µm template/(0001 sapphire substrate. The indium (x concentration of the Al1−xInxN epitaxial layers was changed as 0.04, 0.18, 0.20, 0.47, and 0.48. The Indium content (x, lattice parameters, and strain values in the AlInN layers were calculated from the reciprocal lattice mapping around symmetric (0002 and asymmetric (10–15 reflection of the AlInN and GaN layers. The mosaic structure characteristics of the AlInN layers, such as lateral and vertical coherence lengths, tilt and twist angle, heterogeneous strain, and dislocation densities (edge and screw type dislocations of the AlInN epilayers, were investigated by using high-resolution X-ray diffraction measurements and with a combination of Williamson-Hall plot and the fitting of twist angles.

  6. Structural and luminescence properties of GaN nanowires grown using cobalt phthalocyanine as catalyst

    Science.gov (United States)

    Yadav, Shivesh; Rodríguez-Fernández, Carlos; de Lima, Mauricio M.; Cantarero, Andres; Dhar, Subhabrata

    2015-12-01

    Catalyst free methods have usually been employed to avoid any catalyst induced contamination for the synthesis of GaN nanowires with better transport and optical properties. Here, we have used a catalytic route to grow GaN nanowires, which show good optical quality. Structural and luminescence properties of GaN nanowires grown by vapor-liquid-solid technique using cobalt phthalocyanine as catalyst are systematically investigated as a function of various growth parameters such as the growth temperature and III/V ratio. The study reveals that most of the nanowires, which are several tens of microns long, grow along [ 10 1 ¯ 0 ] direction. Interestingly, the average wire diameter has been found to decrease with the increase in III/V ratio. It has also been observed that in these samples, defect related broad luminescence features, which are often present in GaN, are completely suppressed. At all temperatures, photoluminescence spectrum is found to be dominated only by a band edge feature, which comprises of free and bound excitonic transitions. Our study furthermore reveals that the bound excitonic feature is associated with excitons trapped in certain deep level defects, which result from the deficiency of nitrogen during growth. This transition has a strong coupling with the localized vibrational modes of the defects.

  7. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  8. Effects of Complex Structured Anodic Oxide Dielectric Layer Grown in Pore Matrix for Aluminum Capacitor.

    Science.gov (United States)

    Shin, Jin-Ha; Yun, Sook Young; Lee, Chang Hyoung; Park, Hwa-Sun; Suh, Su-Jeong

    2015-11-01

    Anodization of aluminum is generally divided up into two types of anodic aluminum oxide structures depending on electrolyte type. In this study, an anodization process was carried out in two steps to obtain high dielectric strength and break down voltage. In the first step, evaporated high purity Al on Si wafer was anodized in oxalic acidic aqueous solution at various times at a constant temperature of 5 degrees C. In the second step, citric acidic aqueous solution was used to obtain a thickly grown sub-barrier layer. During the second anodization process, the anodizing potential of various ranges was applied at room temperature. An increased thickness of the sub-barrier layer in the porous matrix was obtained according to the increment of the applied anodizing potential. The microstructures and the growth of the sub-barrier layer were then observed with an increasing anodizing potential of 40 to 300 V by using a scanning electron microscope (SEM). An impedance analyzer was used to observe the change of electrical properties, including the capacitance, dissipation factor, impedance, and equivalent series resistance (ESR) depending on the thickness increase of the sub-barrier layer. In addition, the breakdown voltage was measured. The results revealed that dielectric strength was improved with the increase of sub-barrier layer thickness.

  9. Epitaxially grown zinc-blende structured Mn doped ZnO nanoshell on ZnS nanoparticles

    International Nuclear Information System (INIS)

    Limaye, Mukta V.; Singh, Shashi B.; Date, Sadgopal K.; Gholap, R.S.; Kulkarni, Sulabha K.

    2009-01-01

    Zinc oxide in the bulk as well as in the nanocrystalline form is thermodynamically stable in the wurtzite structure. However, zinc oxide in the zinc-blende structure is more useful than that in the wurtzite structure due to its superior electronic properties as well as possibility of efficient doping. Therefore, zinc oxide shell is grown epitaxially on zinc sulphide core nanoparticles having zinc-blende structure. It is shown that doping of manganese could be achieved in zinc oxide nanoshell with zinc-blende structure

  10. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  11. Workshop on artificial superlattices

    International Nuclear Information System (INIS)

    1980-01-01

    The program and 24 abstracts are given. The abstracts are divided into the following categories: structure and elastic properties, transport and electronic properties, magnetism and superconductivity, and phonons

  12. Photoacoustic transformation of Bessel light beams in magnetoactive superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Mityurich, G. S., E-mail: George-mityurich@mail.ru [Belarusian Trade and Economics University of Consumer Cooperatives (Belarus); Chernenok, E. V.; Sviridova, V. V.; Serdyukov, A. N. [Gomel State University (Belarus)

    2015-03-15

    Photoacoustic transformation of the TE mode of a Bessel light beam (BLB) has been studied for piezoelectric detection in short-period superlattices formed by magnetoactive crystals of bismuth germanate (Bi{sub 12}GeO{sub 20}) and bismuth silicate (Bi{sub 12}SiO{sub 20}) types. It is shown that the resulting signal amplitude can be controlled using optical schemes of BLB formation with a tunable cone angle. A resonant increase in the signal amplitude has been found in the megahertz range of modulation frequencies and its dependences on the BLB modulation frequency, geometric sizes of the two-layer structure and piezoelectric transducer, radial coordinate of the polarization BLB mode, and dissipative superlattice parameters are analyzed.

  13. Transport properties of YBa2Cu3O7/PrBa2Cu3O7 superlattices

    International Nuclear Information System (INIS)

    Jakob, G.; Hahn, T.; Stoelzel, C.; Tome-Rosa, C.; Adrian, H.

    1992-01-01

    We investigated the transport properties of high-quality YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 superlattices. The exceptional structural order of the superlattices resulted in satellite peaks up to the ninth order in X-ray diffraction diagrams and high Tc values. We find high superconducting critical transport current densities j c even for ultrafine modulated superlattices which proves the existence of nearly continuous YBa 2 Cu 3 O 7 layers. The activation energy U is found to be constant or to have a linear temperatures dependence over a wide temperature range. (orig.)

  14. Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

    KAUST Repository

    Bian, Kaifu; Choi, Joshua J.; Kaushik, Ananth; Clancy, Paulette; Smilgies, Detlef-M.; Hanrath, Tobias

    2011-01-01

    Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

  15. Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

    KAUST Repository

    Bian, Kaifu

    2011-04-26

    Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

  16. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  17. Novel Si-Ge-C Superlattices for More than Moore CMOS

    Science.gov (United States)

    2016-03-31

    Keywords: Silicon ; Germanium; Carbon; Superlattices; Direct Band-Gaps; Silicon - Photonics ; Image Sensors. Introduction Materials with direct band-gaps and...Wang Z., B. Tian, M. Pantouvaki, et al., “Room- temperature InP distributed feedback laser array directly grown on silicon ”, Nature Photonics 9, 2015...Creek Blvd. Suite 284 San Jose, CA 95129 Contact author: Lynn.Forester@Quantumsemi.com Abstract: The search for Silicon -based direct band-gap

  18. Woody plant diversity and structure of shade-grown-coffee plantations in Northern Chiapas, Mexico

    Directory of Open Access Journals (Sweden)

    Lorena Soto-Pinto

    2001-12-01

    Full Text Available Shade-grown coffee is an agricultural system that contains some forest-like characteristics. However, structure and diversity are poorly known in shade coffee systems. In 61 coffee-growers’ plots of Chiapas, Mexico, structural variables of shade vegetation and coffee yields were measured, recording species and their use. Coffee stands had five vegetation strata. Seventy seven woody species mostly used as wood were found (mean density 371.4 trees per hectare. Ninety percent were native species (40% of the local flora, the remaining were introduced species, mainly fruit trees/shrubs. Diametric distribution resembles that of a secondary forest. Principal Coordinates Analysis grouped plots in four classes by the presence of Inga, however the majority of plots are diverse. There was no difference in equitability among groups or coffee yields. Coffee yield was 835 g clean coffee per shrub, or ca. 1668 kg ha-1. There is a significant role of shade-grown coffee as diversity refuge for woody plants and presumably associated fauna, as well as an opportunity for shade-coffee growers to participate in the new biodiversity-friendly-coffee marketEl café bajo sombra es un sistema agrícola que contiene algunas características de los bosques. Sin embargo, las características estructurales y de diversidad de la sombra del café son poco conocidas. En 61 parcelas de productores del norte de Chiapas, Mexico, se midieron variables estructurales de la vegetación de sombra y los rendimientos de café, registrando las especies y sus usos. Los cafetales presentaron cinco estratos de vegetación. Se encontraron 77 especies leñosas, la mayoría de uso maderable (densidad promedio de 371.4 árboles por hectárea. Noventa por ciento fueron especies nativas (40% de la flora local, el porcentaje restante fueron especies introducidas, principalmente árboles o arbustos frutales. La distribución diamétrica se asemeja a la distribución típica de bosques secundarios

  19. Kinetic Monte Carlo simulation of phase-precipitation versus instability behavior in short period FeCr superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Martínez, F.J. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castejón-Mochón, J.F., E-mail: jfcastejon@ucam.edu [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castrillo, P.; Berenguer-Vidal, R. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Dopico, I.; Martin-Bragado, I. [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe (Madrid) (Spain)

    2017-02-15

    The structural evolution of FeCr superlattices has been studied using a quasi-atomistic Object Kinetic Monte Carlo model. Superlattices with different spatial periods have been simulated for anneal durations from few hours to several months at 500 °C. Relatively-long period superlattices stabilize into Fe-rich and Cr-rich layers with compositions close to those of bulk α and α′ phases. In contrast, superlattices with very short periods (4, 5, 6 nm) are observed to undergo instability and, for long annealing times, evolve into three-dimensionally decomposed regions, in qualitative agreement to recent experimental observations. The instability onset is delayed as the spatial period increases, and it occurs via interface roughness. This evolution can be explained as a minimization of the free-energy associated to the α/α′ interfaces. A comprehensive description of the evolution dynamics of FeCr-based structures is obtained with our model.

  20. X-ray diffraction of multilayers and superlattices

    International Nuclear Information System (INIS)

    Bartels, W.J.; Hornstra, J.; Lobeek, D.J.W.

    1986-01-01

    Recursion formulae for calculating the reflected amplitude ratio of multilayers and superlattices have been derived from the Takagi-Taupin differential equations, which describe the dynamical diffraction of X-rays in deformed crystals. Calculated rocking curves of complicated layered structures, such as non-ideal superlattices on perfect crystals, are shown to be in good agreement with observed diffraction profiles. The kinematical theory can save computing time only in the case of an ideal superlattice, for which a geometric series can be used, but the reflections must be below 10% so that multiple reflections can be neglected. For a perfect crystal of arbitrary thickness the absorption at the center of the dynamical reflection is found to be proportional to the square root of the reflectivity. Sputter-deposited periodic multilayers of tungsten and carbon can be considered as an artificial crystal, for which dynamical X-ray diffraction calculations give results very similar to those of a macroscopic optical description in terms of the complex index of refraction and Fresnel reflection coefficients. (orig.)

  1. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

    2014-01-01

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  2. Waves in man-made materials: superlattice to metamaterials

    Science.gov (United States)

    Tsu, Raphael; Fiddy, Michael A.

    2014-07-01

    While artificial or man-made structures date back to Lord Rayleigh, the work started by Lewin in 1947, placing spheres onto cubic lattices, greatly enriched microwave materials and devices. It was very suggestive of both metamaterials and photonics crystals. Effective medium models were used to describe bulk properties with some success. The concept of metamaterials followed photonic crystals, and these both were introduced after the introduction of the man-made superlattices designed to enrich the class of materials for electronic devices. The work on serrated ridged waveguides by Kirschbaum and Tsu for the control of the refractive index of microwave lenses as well as microwave matching devices in 1959 used a combination of theory, such as Floquet's theory, Bloch theory in one dimension, as well as periodic lumped loading. There is much in common between metamaterials and superlattices, but in this paper, we discuss some practical limitations to both. It is pointed out that unlike superlattices where kl > 1 is the most important criterion, metamaterials try to avoid involve such restrictions. However, the natural random fluctuations that limit the properties of naturally occurring materials are shown to take a toll on the theoretical predictions of metamaterials. The question is how great that toll, i.e. how significant those fluctuations will be, in diminishing the unusual properties that metamaterials can exhibit.

  3. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

    Science.gov (United States)

    Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

    2018-04-01

    Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

  4. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.

    2014-04-22

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  5. Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

    KAUST Repository

    El Afandy, Rami

    2011-07-07

    Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

  6. Structural characterization of one-dimensional ZnO-based nanostructures grown by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Sallet, Vincent; Falyouni, Farid; Marzouki, Ali; Haneche, Nadia; Sartel, Corinne; Lusson, Alain; Galtier, Pierre [Groupe d' Etude de la Matiere Condensee (GEMAC), CNRS-Universite de Versailles St-Quentin, Meudon (France); Agouram, Said [SCSIE, Universitat de Valencia, Burjassot (Spain); Enouz-Vedrenne, Shaima [Thales Research and Technology France, Palaiseau (France); Munoz-Sanjose, Vicente [Departamento de Fisica Aplicada y Electromagnetismo, Universitat de Valencia, Burjassot (Spain)

    2010-07-15

    Various one-dimensional (1D) ZnO-based nanostructures, including ZnO nano-wires (NWs) grown using vapour-liquid-solid (VLS) process, ZnO/ZnSe core/shell, nitrogen-doped ZnO and ZnMgO NWs were grown by metalorganic chemical vapour deposition (MOCVD). Transmission electron microscopy (TEM) analysis is presented. For all the samples, a high crystalline quality is observed. Some features are emphasized such as the gold contamination of ZnO wires grown under the metal droplets in the VLS process. It is concluded that MOCVD is a suitable technique for the realization of original ZnO nanodevices. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

  7. Magneto-transport studies of InAs/GaSb short period superlattices

    International Nuclear Information System (INIS)

    Broadley, Victoria Jane

    2002-01-01

    This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices in the presence of strong electric and magnetic fields applied parallel to the growth axis. Electrical transport parallel to the growth axis occurs through the superlattice miniband, which have widths varying from three to 30meV. Resonant scattering between confined Landau levels and Stark levels is observed at low temperatures (4.2K). In addition LO-phonon assisted scattering between Landau levels is observed in both type-I GaAs/AIAs and type-ll inAs/GaSb superlattices, which are enhanced in the type-ll system due to the strong interband coupling. K·p band structure calculations show that the interband coupling causes the superlattice miniband energy dispersion to be strongly dependent on the in-plane wavevector and the applied magnetic field. For large applied electric fields, where the miniband is split into discrete Stark levels, strong stark-cyclotron resonance (SCR) features are observed, which occur when the Landau level separation equals to the stark level separation. These resonances are enhanced when compared to SCR in type-I superlattices due to the suppression of miniband conduction in higher lying Landau levels. At low electric fields electrical transport through the superlattice miniband yields characteristic miniband transport features, which are modelled using the Esaki-Tsu miniband transport model. Strong electron - LO-phonon scattering is also observed in InAs/GaSb superlattices, where we report the first observation of miniband transport assisted via the emission of LO-phonons between stark levels in adjacent wells. Below 50K thermally activated behaviour is reported and at high magnetic fields (in the quantum limit) complete localisation of carriers is observed. In this regime LO-phonon delocalised transport in also observed. (author)

  8. Strain-symmetrized Si/SiGe multi-quantum well structures grown by molecular beam epitaxy for intersubband engineering

    International Nuclear Information System (INIS)

    Zhao, M.; Karim, A.; Ni, W.-X.; Pidgeon, C.R.; Phillips, P.J.; Carder, D.; Murdin, B.N.; Fromherz, T.; Paul, D.J.

    2006-01-01

    Three strain-symmetrized Si/SiGe multi-quantum well structures, designed for probing the carrier lifetime of intrawell intersubband transitions between heavy hole 1 (HH1) and light hole 1 (LH1) states with transition energies below the optical phonon energy, were grown by molecular beam epitaxy at low temperature on fully relaxed SiGe virtual substrates. The grown structures were characterized by using various experimental techniques, showing a high crystalline quality and very precise growth control. The lifetime of the LH1 excited state was determined directly with pump-probe spectroscopy. The measurements indicated an increase of the lifetime by a factor of ∼2 due to the increasingly unconfined LH1 state, which agreed very well with the design. It also showed a very long lifetime of several hundred picoseconds for the holes excited out of the well to transit back to the well through a diagonal process

  9. Composition, structure and electrical properties of alumina barrier layers grown in fluoride-containing oxalic acid solutions

    Energy Technology Data Exchange (ETDEWEB)

    Jagminas, A. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)], E-mail: jagmin@ktl.mii.lt; Vrublevsky, I. [Department of Microelectricals, Belarusian State University of Informatics and Radioelectricals, 6 Brovka Street, Minsk 220013 (Belarus); Kuzmarskyte, J.; Jasulaitiene, V. [Institute of Chemistry, A. Gostauto 9, LT-01108 Vilnius (Lithuania)

    2008-04-15

    The composition, structure and electrical properties of alumina barrier layers grown by anodic oxidation in F{sup -}-containing (FC) and F{sup -}-free (FF) oxalic acid solutions were studied using the re-anodizing/dissolution technique, Fourier-transformed infrared and X-ray photoelectron spectroscopy. These results confirmed formation in FC anodizing solutions of films structurally different from ones grown in FF oxalic acid baths. It was found that the barrier layer of FC alumina films is composed of two layers differing in the dissolution rate. These differences are related to the formation in the FC electrolyte of a barrier layer composed of a more microporous outer part and a thin, non-porous and non-scalloped inner part consisting of aluminum oxide and aluminum fluoride.

  10. Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Wang, Ch.Y.; Cimalla, V.; Romanus, H.; Kups, Th.; Niebelschuetz, M.; Ambacher, O.

    2007-01-01

    Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polytypes on (0001) sapphire substrates was obtained by adjusting the substrate temperature and trimethylindium flow rate. The specific resistance of the as-grown films can be tuned by about two orders of magnitude by varying the growth conditions

  11. Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3Superlattices

    KAUST Repository

    Liu, Heng-Jui

    2015-12-09

    © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus. A fascinating model system of optic-driven functionalities has been achieved by artificial superlattices consisting of manganite La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO). With design of different initial strain and orbital states in superlattices, we can even control the photoresistivity of the superlattices in an opposite trend that cannot be achieved in pure single film.

  12. Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

    Science.gov (United States)

    Yusuf, Mohammed; Du, Xu; Dawber, Matthew

    2013-03-01

    Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

  13. Theory of transmission through disordered superlattices

    DEFF Research Database (Denmark)

    Wacker, Andreas; Hu, Ben Yu-Kuang

    1999-01-01

    We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission through samples with large cross sections. These calculations can be performed...

  14. Structural and optical properties of ZnO films grown on silicon and ...

    Indian Academy of Sciences (India)

    TECS

    Abstract. Photoluminescence (PL) properties of undoped ZnO thin films grown by rf magnetron sputtering on silicon .... voluted O1 s and (c) typical Zr 3d spectra of ZrO2/ZnO/Si film. .... strate doping concentration (NB) of ≈ 2⋅5 × 1015 cm–3 is.

  15. Domain structures of LiNbO3 crystals grown by a floating zone technique

    International Nuclear Information System (INIS)

    Kawakami, Shoji; Ishii, Eiichi; Tsuzuki, Akihiro; Sekiya, Tadashi; Torii, Yasuyoshi; Takahashi, Akio.

    1986-01-01

    LiNbO 3 single crystals were grown from the congruently melting composition by a floating zone technique. It was confirmed by etching that the single domain crystals were produced without applying any external electric field. When annealed above the Curie temperature, antiparallel domain appeared in the form of annual rings. (author)

  16. Design of band pass filter in a modulated magnetic graphene superlattice

    International Nuclear Information System (INIS)

    Lu, Wei-Tao; Li, Wen

    2015-01-01

    Electronic transport of graphene through a modulated magnetic superlattice where the barrier heights present Gaussian profile is studied. It is found that the incident electron could be completely transmitted in the miniband regions and be completely reflected in the bandgap regions. The results suggest an application of the structure as an effectively band pass filter, which can be controlled by the structural parameters. It is concluded that the positions of miniband and bandgap are robust to the Gaussian variation of barrier heights. The effect of this modulated magnetic superlattice is also available for the conventional electrons described by Schrödinger equation

  17. Propagation and generation of Josephson radiation in superconductor/insulator superlattices

    International Nuclear Information System (INIS)

    Auvil, P.R.; Ketterson, J.B.

    1987-01-01

    The wave propagation and generation characteristics of a metal-insulator superlattice are calculated in a low-field Landau--Ginzburg model, including Josephson coupling through the insulating layers. It is shown that a significant increase in the phase velocity of the electromagnetic waves propagating in the superlattice occurs when the thickness of the superconducting layers becomes much less than the London penetration depth, suggesting that increased output of Josephson radiation may be achieved from such structures. Wave generation via the ac Josephson effect (in the presence of applied dc electric and magnetic fields) is studied for both parallel and series driven multilayer structures

  18. Microwave properties of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

    International Nuclear Information System (INIS)

    Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

    1992-01-01

    We have used non-resonant microwave absorption to study c-axis YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ superlattices and compare the response to a film of similarly grown YBa 2 Cu 3 O 7-δ (YBCO). Near the respective transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependences. This is consistent with the microwave loss being related to magnetic flux penetration at (110) slip planes. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependences, which we attribute to the role of the PrBa 2 Cu 3 O 7-δ layers. (orig.)

  19. Epitaxial rare-earth superlattices and films

    International Nuclear Information System (INIS)

    Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

    1992-01-01

    This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

  20. Ferromagnet / superconductor oxide superlattices

    Science.gov (United States)

    Santamaria, Jacobo

    2006-03-01

    The growth of heterostructures combining oxide materials is a new strategy to design novel artificial multifunctional materials with interesting behaviors ruled by the interface. With the (re)discovery of colossal magnetoresistance (CMR) materials, there has been renewed interest in heterostructures involving oxide superconductors and CMR ferromagnets where ferromagnetism (F) and superconductivity (S) compete within nanometric distances from the interface. In F/S/F structures involving oxides, interfaces are especially complex and various factors like interface disorder and roughness, epitaxial strain, polarity mismatch etc., are responsible for depressed magnetic and superconducting properties at the interface over nanometer length scales. In this talk I will focus in F/S/F structures made of YBa2Cu3O7 (YBCO) and La0.7Ca0.3MnO3 (LCMO). The high degree of spin polarization of the LCMO conduction band, together with the d-wave superconductivity of the YBCO make this F/S system an adequate candidate for the search of novel spin dependent effects in transport. We show that superconductivity at the interface is depressed by various factors like charge transfer, spin injection or ferromagnetic superconducting proximity effect. I will present experiments to examine the characteristic distances of the various mechanisms of superconductivity depression. In particular, I will discuss that the critical temperature of the superconductor depends on the relative orientation of the magnetization of the F layers, giving rise to a new giant magnetoresistance effect which might be of interest for spintronic applications. Work done in collaboration with V. Peña^1, Z. Sefrioui^1, J. Garcia-Barriocanal^1, C. Visani^1, D. Arias^1, C. Leon^1 , N. Nemes^2, M. Garcia Hernandez^2, S. G. E. te Velthuis^3, A. Hoffmann^3, M. Varela^4, S. J. Pennycook^4. Work supported by MCYT MAT 2005-06024, CAM GR- MAT-0771/2004, UCM PR3/04-12399 Work at Argonne supported by the Department of Energy, Basic

  1. Free-Standing Metal Oxide Nanoparticle Superlattices Constructed with Engineered Protein Containers Show in Crystallo Catalytic Activity.

    Science.gov (United States)

    Lach, Marcel; Künzle, Matthias; Beck, Tobias

    2017-12-11

    The construction of defined nanostructured catalysts is challenging. In previous work, we established a strategy to assemble binary nanoparticle superlattices with oppositely charged protein containers as building blocks. Here, we show that these free-standing nanoparticle superlattices are catalytically active. The metal oxide nanoparticles inside the protein scaffold are accessible for a range of substrates and show oxidase-like and peroxidase-like activity. The stable superlattices can be reused for several reaction cycles. In contrast to bulk nanoparticle-based catalysts, which are prone to aggregation and difficult to characterize, nanoparticle superlattices based on engineered protein containers provide an innovative synthetic route to structurally defined heterogeneous catalysts with control over nanoparticle size and composition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

    2015-05-11

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

  3. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    International Nuclear Information System (INIS)

    Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

    2015-01-01

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

  4. Interlayer exchange coupling, crystalline and magnetic structure in Fe/CsCl-FeSi multilayers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Dekoster, J.; Degroote, S.; Meersschaut, J.; Moons, R.; Vantomme, A. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium); Bottyan, L.; Deak, L.; Szilagyi, E.; Nagy, D.L. [KFKI Research Institute for Particle and Nuclear Physics (Hungary); Baron, A.Q.R. [European Synchrotron Radiation Facility (France); Langouche, G. [K.U. Leuven, Instituut voor Kern- en Stralingsfysica (Belgium)

    1999-09-15

    Crystalline and magnetic structure as well as the interlayer exchange coupling in MBE grown Fe/FeSi multilayers are investigated. From conversion electron Moessbauer spectroscopy and ion beam channeling measurements the spacer FeSi material is found to be stabilized in a crystalline metastable metallic FeSi phase with the CsCl structure. Strong non-oscillatory interlayer exchange coupling is identified with magnetometry and synchrotron Moessbauer reflectometry. From the fits of the time spectrum and the resonant {phi}-{phi} scans a model for the sublayer magnetization of the multilayer is deduced.

  5. Optical properties of graphene superlattices.

    Science.gov (United States)

    Le, H Anh; Ho, S Ta; Nguyen, D Chien; Do, V Nam

    2014-10-08

    In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, Ub), where Ub is the potential barrier height. In the higher photon energy range, i.e. Ω > Ub, the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism.

  6. Optical properties of graphene superlattices

    International Nuclear Information System (INIS)

    Le, H Anh; Do, V Nam; Ho, S Ta; Nguyen, D Chien

    2014-01-01

    In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, U b ), where U b is the potential barrier height. In the higher photon energy range, i.e. Ω > U b , the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism. (paper)

  7. Strain and Structure Heterogeneity in MoS2 Atomic Layers Grown by Chemical Vapour Deposition

    Science.gov (United States)

    2014-11-18

    cture heterogeneity in MoS2 atomiclayers grown by chemical vapour deposition 6. AUTHORS Zheng Liu, Matin Amani, Sina Najmaei, Quan Xu, Xiaolong Zou...deposition Zheng Liu1•2•3·*, Matin Amani4·*, Sina Najmaei5·*, Quan Xu6•7, Xiaolong Zou5, Wu Zhou8, Ting Yu9, Caiyu Qiu9, A Glen Birdwell4, Frank J. Crowne4

  8. Electrical and structural characterization of as-grown and annealed hydrothermal bulk ZnO

    International Nuclear Information System (INIS)

    Kassier, G. H.; Hayes, M.; Auret, F. D.; Mamor, M.; Bouziane, K.

    2007-01-01

    Hall effect measurements in the range 20-370 K on as-grown and annealed hydrothermal bulk ZnO have been performed. The bulk conductivity in the highly resistive as-grown sample was found to decrease and then increase after annealing at 550 deg. C and 930 deg. C, respectively. The conduction in the as-grown material is attributed to a deep donor which is replaced by a much shallower donor after annealing at 930 deg. C. Annealing at both temperatures also produced strong surface conduction effects. Nondegenerate low-mobility surface conduction dominated the electrical properties of the sample annealed at 550 deg. C, while a degenerate surface channel was formed after annealing at 930 deg. C. In addition, Rutherford backscattering and channeling spectrometry (RBS/C) was used to assess the effect of annealing on the crystalline quality of the samples. RBS/C measurements reveal that annealing at 930 deg. C leads to significant improvement of the crystalline quality of the material, while annealing at 550 deg. C results in the segregation of a nonchanneling impurity at the surface

  9. Atomic structure of defects in GaN:Mg grown with Ga polarity

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

    2003-01-01

    Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

  10. Thermoelectric efficiency of IV-VI multiple quantumwell and superlattice systems

    International Nuclear Information System (INIS)

    Beyer, H.

    2001-09-01

    In this thesis the thermoelectric properties of PbTe-based multiple quantum well (MQW) and superlattice (SL) structures grown by molecular beam epitaxy (MBE) are investigated. The two approaches for an enhancement of the dimensionless thermoelectric figure of merit ZT = σS 2 T/λ (σ: electric conductivity, S: Seebeck coefficient, λ: thermal conductivity, T: temperature) in low dimensional structures are discussed: an enhancement of the two dimensional (2D) power factor σS 2 2D due to carrier confinement or a reduction of the thermal conductivity due to a modified phonon dispersion and stronger phonon scattering in layered structures. The novel PbTe/Pb 1-x Sr x Te-MQW system is investigated for a rise of the 2D power factor σS 2 2D . A detailed analysis of optical and electronic parameters based on infrared transmission spectra is performed. Only a small rise of the 2D power factor σS 2 2D for the MQW's compared to homogeneous epitaxial PbTe-layers is found. This smaller σS 2 2D -rise compared to first predictions for ideal MQW's is related to the finite barrier height and effects like lifting of the valley degeneracy or enhanced carrier scattering. However, a strong reduction of the thermal conductivity is found in MQW structures resulting in 2D ZT values between 0.5 and 1.0 at T = 300 K and up to 1.6 at T = 550 K. For the use in technical applications the three dimensional (3D) figure of merit of the whole structure ZT 3D must be raised. Different novel PbTe-based superlattice structures are investigated with respect to a 3D ZT-increase due to thermal conductivity reduction. ZT 3D -values of 0.33 for p-type PbTe-doping superlattices and of 0.45 at T = 300 K for PbTe/PbSe 20 Te 80 -SL's are determined (T = 300 K; n-PbTe: ZT max = 0.36, p-PbTe: ZT max = 0.30). Maximum ZT-values up to 1.25 for PbTe/PbSe 20 Te 80 -SL's and 1.20 for PbTe-doping SL's are estimated for temperatures between 450 K and 550 K. These values show the potential of these structures for

  11. Enhanced photocatalytic properties of hierarchical three-dimensional TiO{sub 2} grown on femtosecond laser structured titanium substrate

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Ting, E-mail: huangting@bjut.edu.cn; Lu, Jinlong; Xiao, Rongshi; Wu, Qiang; Yang, Wuxiong

    2017-05-01

    Highlights: • The hierarchical 3D-TiO{sub 2} is fabricated on femtosecond laser structured Ti substrate. • The formation mechanism of hierarchical 3D-TiO{sub 2} is proposed. • The structure-induced improvement of photocatalytic activity is reported. - Abstract: Three-dimensional micro-/nanostructured TiO{sub 2} (3D-TiO{sub 2}) fabricated on titanium substrate effectively improves its performance in photocatalysis, dye-sensitized solar cell and lithium-ion battery applications. In this study, the hierarchical 3D-TiO{sub 2} with anatase phase directly grown on femtosecond laser structured titanium substrate is reported. First, the primary columnar arrays were fabricated on the surface of titanium substrate by femtosecond laser structuring. Next, the secondary nano-sheet substructures were grown on the primary columnar arrays by NaOH hydrothermal treatment. Followed by ion-exchange process in HCl and annealing in the air, the hierarchical anatase 3D-TiO{sub 2} was achieved. The hierarchical anatase 3D-TiO{sub 2} exhibited enhanced performances in light harvesting and absorption ability compared to that of nano-sheet TiO{sub 2} grown on flat titanium surface without femtosecond laser structuring. The photocatalytic degradation of methyl orange reveals that photocatalytic efficiency of the hierarchical anatase 3D-TiO{sub 2} was improved by a maximum of 57% compared to that of nano-sheet TiO{sub 2} (55% vs 35%). Meanwhile, the hierarchical anatase 3D-TiO{sub 2} remained mechanically stable and constant in consecutive degradation cycles, which promises significance in practical application.

  12. Structural and optical characteristics of InN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Kim, Je Won; Lee, Kyu Han; Hong, Sangsu

    2007-01-01

    The structural and electrical properties of InN/GaN multiple quantum wells, which were grown by metalorganic chemical vapor deposition, were characterized by transmission electron microscopy (TEM) and electroluminescence measurements. From the TEM micrographs, it was shown that the well layer was grown like a quantum dot. The well layer is expected to be the nano-size structures in the InN multiple quantum well layers. The multi-photon confocal laser scanning microscopy was used to investigate the optical properties of the light emitting diode (LED) structures with InN active layers. It was found that the two-photon excitation was possible in InN system. The pit density was measured by using the far-field optical technique. In the varied current conditions, the blue LED with the InN multiple quantum well structures did not have the wavelength shift. With this result, we can expect that the white LEDs with the InN multiple quantum well structures do not show the color temperature changes with the variations of applied currents

  13. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Burkhart, J.H.

    1997-01-01

    We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH 3 , and PH 3 . By changing the layer thickness and composition we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

  14. Influence of the interface corrugation on the subband dispersions and the optical properties of (113)-oriented GaAs/AlAs superlattices

    DEFF Research Database (Denmark)

    Langbein, Wolfgang Werner; Lüerssen, D.; Kalt, H.

    1996-01-01

    We report on the influence of the interface corrugation in (113)-grown GaAs/AlAs superlattices on their band-edge optical properties both in theory and experiment. We calculate the subband dispersions and the optical anisotropies in a multiband k . p formalism. The dominating contribution...... to the optical anisotropies is found to be due to the intrinsic properties of the valence-band structure. The corrugation modifies the density of states only slightly, giving no evidence of a quantum-win behavior. By comparing the calculation with the experimental optical anisotropy, we can estimate...... of the localized type-I states at the band-edge show an enhanced optical anisotropy in comparison to the luminescence of the extended states, revealing the anisotropic nature of their localization sites. In type-II samples, deeply localized, isolated type-I states (Gamma quantum boxes) dominate the luminescence...

  15. Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

    Science.gov (United States)

    Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

    New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500 mAh, AAA size type 900 mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material.

  16. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  17. Energy band and transport properties in magnetic aperiodic graphene superlattices of Thue-Morse sequence

    Science.gov (United States)

    Yin, Yiheng; Niu, Yanxiong; Zhang, Huiyun; Zhang, Yuping; Liu, Haiyue

    2016-02-01

    Utilizing the transfer matrix method, we develop the electronic band structure and transport properties in Thue-Morse aperiodic graphene superlattices with magnetic barriers. It is found that the normal transmission is blocked and the position of the Dirac point can be shifted along the wavevector axis by changing the height and width ratio of magnetic barriers, which is intrinsic different from electronic field modulated superlattices. In addition, the angular threshold property of the transmission spectra and the oscillatory property of the conductance have been studied.

  18. The influence of growth parameters on the structure and composition of CuGaS2 epilayers grown by MOVPE

    International Nuclear Information System (INIS)

    Branch, M.S.; Berndt, P.R.; Leitch, A.W.R.; Botha, J.R.; Weber, J.

    2006-01-01

    The influence of various growth parameters on the composition and structure of MOVPE-grown CuGaS 2 is presented. The Cu content of the grown layers is shown to decrease in the direction of the carrier gas flow, whilst the Ga and S content are shown to increase. Changing the flow of Cu(hfac) 2 .Et 3 N to vary the I/III ratio in the vapour phase has a greater effect on the composition of grown epilayers than changing the flow of TEGa. This is indicative of Cu being the minority species present at the growth interface. A larger rate of decrease in the Cu content with an increase in both TEGa and DtBS flows suggests pre-reactions between Cu(hfac) 2 .Et 3 N and both TEGa and DtBS precursors. Lower substrate temperatures are suggested to be thermodynamically unfavourable for the growth of CuGaS 2 , yet enhance the formation of Ga x S y phases. The surface morphology of Cu-rich layers are typically inferior with a high density of crystallites, whilst Cu-poor epilayers are characteristically smooth with a single XRD reflection attributed to the (004) plane of c-axis-orientated epitaxial material

  19. Yield and yield structure of spring barley (Hodeum vulgare L. grown in monoculture after different stubble crops

    Directory of Open Access Journals (Sweden)

    Dorota Gawęda

    2012-12-01

    Full Text Available A field experiment was conducted in the period 2006- 2008 in the Uhrusk Experimental Farm belonging to the University of Life Sciences in Lublin. The experimental factor was the type of stubble crop ploughed in each year after harvest of spring barley: white mustard, lacy phacelia, winter rape, and a mixture of narrow-leaf lupin with field pea. In the experiment, successive spring barley crops were grown one after the other (in continuous monoculture. The aim of the experiment was to evaluate the effect of stubble crops used on the size and structure of barley yield. The three-year study showed an increasing trend in grain yield of spring barley grown after the mixture of legumes, lacy phacelia, and white mustard compared to its size in the treatment with no cover crop. Straw yield was significantly higher when barley was grown after the mixture of narrowleaf lupin with field pea than in the other treatments of the experiment. The type of ploughed-in stubble crop did not modify significantly plant height, ear length, and grain weight per ear. Growing the mixture of leguminous plants as a cover crop resulted in a significant increase in the density of ears per unit area in barley by an average of 14.7% relative to the treatment with winter rape. The experiment also showed the beneficial effect of the winter rape cover crop on 1000-grain weight of spring barley compared to that obtained in the treatments with white mustard and the mixture of legumes. All the cover crops caused an increase in the number of grains per ear of barley relative to that found in the control treatment. However, this increase was statistically proven only for the barley crops grown after lacy phacelia and the mixture of legumes.

  20. Characterization of as-grown and heavily irradiated GaN epitaxial structures by photoconductivity and photoluminescence

    International Nuclear Information System (INIS)

    Gaubas, E.; Jurs e-dot nas, S.; Tomasiunas, R.; Vaitkus, J.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.

    2005-01-01

    The influence of radiation defects on photoconductivity transients and photoluminescence (PL) spectra have been examined in semi-insulating GaN epitaxial layers grown on bulk n-GaN/sapphire substrates. Defects induced by 10-keV X-ray irradiation with a dose of 600Mrad and 100-keV neutrons with fluences of 5x10 14 and 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the radiation defect density. A simultaneous decrease with radiation-induced defect density is also observed in the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime, which is due to excess carrier multi-trapping. The decay can be described by the stretched exponential approximation exp[-(t/τ) α ] with different values of α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The value of the fracton dimension d s of the disordered structure, evaluated as d s =2α/(1-α), changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, implying percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiation

  1. Characterization for rbs of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide

    International Nuclear Information System (INIS)

    Pedrero, E.; Vigil, E.; Zumeta, I.

    1999-01-01

    The depth of Titanium Oxide thin films grown by Dip Coating in a coloidal suspension of nano structured Titanium Oxide was characterized using Rutherford Backscattering Spectrometry. Film depths are compared in function of bath and suspension parameters

  2. Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire

    Science.gov (United States)

    Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas

    2011-05-01

    The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.

  3. Bonding structure and morphology of chromium oxide films grown by pulsed-DC reactive magnetron sputter deposition

    Energy Technology Data Exchange (ETDEWEB)

    Gago, R., E-mail: rgago@icmm.csic.es [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, E-28049 Madrid (Spain); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme IKTS, D-01277 Dresden (Germany); Hübner, R. [Helmholtz-Zentrum Dresden – Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstraße 400, 01328 Dresden (Germany); Redondo-Cubero, A. [Departamento de Física Aplicada and Centro de Microanálisis de Materiales, Universidad Autónoma de Madrid, E-28049 Madrid (Spain)

    2016-07-05

    Chromium oxide (CrO{sub x}) thin films were grown by pulsed-DC reactive magnetron sputter deposition in an Ar/O{sub 2} discharge as a function of the O{sub 2} fraction in the gas mixture (ƒ) and for substrate temperatures, T{sub s}, up to 450 °C. The samples were analysed by Rutherford backscattering spectrometry (RBS), spectroscopic ellipsometry (SE), atomic force microscopy (AFM), scanning (SEM) and transmission (TEM) electron microscopy, X-ray diffraction (XRD), and X-ray absorption near-edge structure (XANES). On unheated substrates, by increasing ƒ the growth rate is higher and the O/Cr ratio (x) rises from ∼2 up to ∼2.5. Inversely, by increasing T{sub s} the atomic incorporation rate drops and x falls to ∼1.8. XRD shows that samples grown on unheated substrates are amorphous and that nanocrystalline Cr{sub 2}O{sub 3} (x = 1.5) is formed by increasing T{sub s}. In amorphous CrO{sub x}, XANES reveals the presence of multiple Cr environments that indicate the growth of mixed-valence oxides, with progressive promotion of hexavalent states with ƒ. XANES data also confirms the formation of single-phase nanocrystalline Cr{sub 2}O{sub 3} at elevated T{sub s}. These structural changes also reflect on the optical and morphological properties of the films. - Highlights: • XANES of CrO{sub x} thin films grown by pulsed-DC reactive magnetron sputtering. • Identification of mixed-valence amorphous CrO{sub x} oxides on unheated substrates. • Promotion of amorphous chromic acid (Cr{sup VI}) by increasing O{sub 2} partial pressure. • Production of single-phase Cr{sub 2}O{sub 3} films by increasing substrate temperature. • Correlation of bonding structure with morphological and optical properties.

  4. The structure and composition of lithium fluoride films grown by off-axis pulsed laser ablation

    International Nuclear Information System (INIS)

    Henley, S.J.; Ashfold, M.N.R.; Pearce, S.R.J.

    2003-01-01

    Alkali halide coatings have been reported to act as effective dipole layers to lower the surface work function and induce a negative electron affinity of diamond surfaces. Here, the results of the analysis of films grown on silicon and quartz substrates by 193 nm pulsed laser ablation from a commercially available sintered disk of LiF are reported. The morphology, composition and crystallinity of films grown are examined and suitable deposition parameters for optimising the growth are suggested. The ablation was shown to be very efficient at removing a large amount of material from the target, even at relatively low fluence. The morphology of the films produced was poor, however, with a high density of asperities categorised as either particulates produced by exfoliation, or as droplets produced by hydrodynamic sputtering. An improved morphology with smaller droplets and fewer particulates could be produced by mounting the substrate at an angle of 65 deg. to the axis of the ablation plume and using a fluence close to the measured ablation threshold of 1.2±0.1 J/cm 2 . The elemental composition of the films was shown to be indistinguishable from that of bulk LiF, despite evidence for significant recondensation of Li back onto the target. Films containing crystal grains oriented with the direction normal to the substrate surface were observed at substrate temperatures in excess of 300 deg. C. An improved extent of orientation was observed on the quartz substrates

  5. Electrical properties of MOS structures on nitrogen-doped Czochralski-grown silicon: A positron annihilation study

    International Nuclear Information System (INIS)

    Slugen, V.; Harmatha, L.; Tapajna, M.; Ballo, P.; Pisecny, P.; Sik, J.; Koegel, G.; Krsjak, V.

    2006-01-01

    Measurements of interface trap density, effective generation lifetime (GL) and effective surface generation velocity have been performed using different methods on selected MOS structures prepared on nitrogen-doped Czochralski-grown (NCz) silicon. The application of the positron annihilation technique using a pulsed low energy positron system (PLEPS) focused on the detection of nitrogen-related defects in NCz silicon in the near surface region. In the case of p-type Cz silicon, all the results could be used for the testing of homogeneity. In n-type Cz silicon, positron annihilation was found insensitive to nitrogen doping

  6. Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO{sub 2{+-}x}

    Energy Technology Data Exchange (ETDEWEB)

    Hildebrandt, Erwin; Kurian, Jose; Alff, Lambert [Institute of Materials Science, Technische Universitaet Darmstadt, 64287 Darmstadt (Germany)

    2012-12-01

    We have conducted a detailed thin film growth structure of oxygen engineered monoclinic HfO{sub 2{+-}x} grown by reactive molecular beam epitaxy. The oxidation conditions induce a switching between (111) and (002) texture of hafnium oxide. The band gap of oxygen deficient hafnia decreases with increasing amount of oxygen vacancies by more than 1 eV. For high oxygen vacancy concentrations, defect bands form inside the band gap that induce optical transitions and p-type conductivity. The resistivity changes by several orders of magnitude as a function of oxidation conditions. Oxygen vacancies do not give rise to ferromagnetic behavior.

  7. Surface structure determinations of crystalline ionic thin films grown on transition metal single crystal surfaces by low energy electron diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Roberts, Joel Glenn [Univ. of California, Berkeley, CA (United States)

    2000-05-01

    The surface structures of NaCl(100), LiF(100) and alpha-MgCl2(0001) adsorbed on various metal single crystals have been determined by low energy electron diffraction (LEED). Thin films of these salts were grown on metal substrates by exposing the heated metal surface to a molecular flux of salt emitted from a Knudsen cell. This method of investigating thin films of insulators (ionic salts) on a conducting substrate (metal) circumvents surface charging problems that plagued bulk studies, thereby allowing the use of electron-based techniques to characterize the surface.

  8. The hyperfine properties of a hydrogenated Fe/V superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Elzain, M., E-mail: elzain@squ.edu.om; Al-Barwani, M.; Gismelseed, A.; Al-Rawas, A.; Yousif, A.; Widatallah, H.; Bouziane, K.; Al-Omari, I. [Sultan Qaboos University, Department of Physics, College of Science (Oman)

    2012-03-15

    We study the effect of hydrogen on the electronic, magnetic and hyperfine structures of an iron-vanadium superlattice consisting of three Fe monolayers and nine V monolayers. The contact charge density ({rho}), the contact hyperfine field (B{sub hf}) and the electronic field gradient (EFG) at the Fe sites for different H locations and H fillings are calculated using the first principle full-potential linear-augmented-plane-wave (FP-LAPW) method. It is found that sizeable changes in the hyperfine properties are obtained only when H is in the interface region.

  9. Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

    Science.gov (United States)

    Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

    2018-01-01

    The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

  10. Electronic structure of Co islands grown on the {radical}3 x {radical}3-Ag/Ge(111) surface

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Xiao-Lan; Chou, Chi-Hao; Lin, Chun-Liang; Tomaszewska, Agnieszka; Fu, Tsu-Yi, E-mail: phtifu@phy.ntnu.edu.tw

    2011-09-30

    By means of room temperature scanning tunneling spectroscopy (RT STS), we have studied the electronic structure of two different Ag/Ge(111) phases as well as Co islands grown on the {radical}3 x {radical}3-Ag/Ge (111) forming either {radical}13 x {radical}13 or 2 x 2 patterns. The spectrum obtained from 4 x 4-Ag/Ge(111) structure shows the existence of a shoulder at 0.7 V which is also present in the electronic structure of the Ge(111)-c2 x 8 and indicates donation of Ge electrons to electronic states of the Ag-driven phase. However, this fact is not supported by the electronic spectrum taken from the {radical}3 x {radical}3-Ag/Ge (111). The complexity of the Co-{radical}13 x {radical}13 islands bonding with the substrate is mirrored by a large number of peaks in their electronic spectra. The spectra obtained from the Co-2 x 2 islands which had grown on the step differ from those taken from Co-2 x 2 islands located along the edge of the terrace by a number of peaks at negative sample bias. This discrepancy is elucidated in terms of dissimilarities of Co-substrate interaction accompanying Co islands growth on different areas of the stepped surface.

  11. Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Frigeri, Cesare, E-mail: frigeri@imem.cnr.it [CNR-IMEM Institute, Parma (Italy); Scarpellini, David [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Department of Industrial Engineering University of Rome Tor Vergata, Rome (Italy); Fedorov, Alexey [LNESS and CNR-IFN, Como (Italy); Bietti, Sergio; Somaschini, Claudio [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Grillo, Vincenzo [CNR-IMEM Institute, Parma (Italy); CNR-S3-NANO Center, Modena (Italy); Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); Sanguinetti, Stefano [L–NESS and Dept. Materials Science, University of Milano Bicocca, Milano (Italy); LNESS and CNR-IFN, Como (Italy)

    2017-02-15

    Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

  12. Structure, interface abruptness and strain relaxation in self-assisted grown InAs/GaAs nanowires

    International Nuclear Information System (INIS)

    Frigeri, Cesare; Scarpellini, David; Fedorov, Alexey; Bietti, Sergio; Somaschini, Claudio; Grillo, Vincenzo; Esposito, Luca; Salvalaglio, Marco; Marzegalli, Anna; Montalenti, Francesco; Sanguinetti, Stefano

    2017-01-01

    Highlights: • We study 2 critical issues (interface abruptness and strain release) in InAs/GaAs NWs. • Structural and chemical interface sharpness ≤1.5 nm, better than in previous reports. • Simultaneous elastic and plastic relaxation is shown that agrees with FEM simulations. • Structural, chemical and strain release investigations were performed by STEM. • New MBE self-seeded method whereby InAs is grown by splitting In and As depositions. - Abstract: The structure, interface abruptness and strain relaxation in InAs/GaAs nanowires grown by molecular beam epitaxy in the Ga self-catalysed mode on (111) Si have been investigated by transmission electron microscopy. The nanowires had the zincblende phase. The InAs/GaAs interface was atomically and chemically sharp with a width around 1.5 nm, i.e. significantly smaller than previously reported values. This was achieved by the consumption of the Ga droplet and formation of a flat top facet of the GaAs followed by the growth of InAs by splitting the depositions of In and As. Both elastic and plastic strain relaxation took place simultaneously. Experimental TEM results about strain relaxation very well agree with linear elasticity theory calculations by the finite element methods.

  13. Coherent dynamics of interwell excitons in GaAs/AlxGa1-xAs superlattices

    DEFF Research Database (Denmark)

    Mizeikis, V.; Birkedal, Dan; Langbein, Wolfgang Werner

    1997-01-01

    Coherent exciton dynamics in a GaAs/AlxGa1-xAs narrow-miniband superlattice is studied by spectrally resolved transient four-wave mixing. Coherent optical properties of the investigated structure are found to be strongly affected by the existence of two different heavy-hole excitonic states. One...

  14. POSITION AND CHARACTER (Ɖ OR X) OF ENERGY STATES IN SHORT-PERIOD (GaAs)m(AlAs)n SUPERLATTICES

    OpenAIRE

    Nagle , J.; Garriga , M.; Stolz , W.; Isu , T.; Ploog , K.

    1987-01-01

    We have grown a series of (GaAs)m(AlAs)n short period superlattices by molecular beam epitaxy including samples with m=n and m≠n. Low temperature photoluminescence, excitation spectroscopy and ellipsometry measurements have been performed to determine the positions and origins of the different electronic states.

  15. Positron probing of electron momentum density in GaAs-AlAs superlattices and related materials

    International Nuclear Information System (INIS)

    Arutyunov, N.Y.; Sekkal, N.

    2008-08-01

    The band structure calculations based on the method proposed by Jaros et al. (Phys. Rev. B 31, 1205 (1985)) have been performed for the defect-free GaAs-AlAs superlattice and related AlAs and GaAs single crystals; the electron-positron momentum density distributions have been computed and analyzed. The results of calculations are in good agreement with the experimental data obtained ad hoc for GaAs and AlAs bulk materials by measuring the angular correlation of the annihilation radiation (ACAR). Small (but marked) features of the electron-positron momentum density of the valence band have been revealed both for constituent materials and GaAs-AlAs superlattice. The delocalization of positron in 'perfect' defect-'free' AlAs and GaAs single crystals to be observed experimentally is borne out by the results of pseudo-potential band calculations performed on the basis of method proposed by Sekkal et al. (Superlattices and Microstructures, 33, 63 (2003)). The prediction of the possibility of a certain confinement of positron in the interstitial area of GaAs- AlAs superlattice is confirmed by the agreement between the results of calculations and relevant experimental data obtained for GaAs and AlAs single crystals. No considerable effect of the enhancement of the annihilation rate (due to electron-positron interaction) upon the electron-positron momentum density distribution both in the superlattice and its constituent bulk materials has been found. The results of ACAR measurements and calculations performed suggest that a tangible improvement of the sensitivity of existing positron annihilation techniques is necessary for studying details of the electron-positron momentum density distributions in defect-'free' superlattices to be created on the basis of the diamond-like semiconductors possessing close values of the electron momentum densities. On the contrary, the positron-sensitive vacancy-type defects of various types in the superlattice may become a source of the

  16. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  17. Structural and optical features of InGaAs quantum dots grown on Si(001) substrates

    CERN Document Server

    Vdovin, V I; Rzaev, M M; Burbaev, T M

    2002-01-01

    A multilayer GaAs/SiGe/Si heterostructure with InGaAs quantum dots (QDs) embedded in a GaAs layer was grown by molecular beam epitaxy (MBE) on a Si(001) substrate. A step-graded Si sub 1 sub - sub x Ge sub x (0 <= x <= 1) buffer layer and a GaAs layer with In sub y Ga sub 1 sub sub - sub y As (y approx 0.5) QDs were deposited consecutively in two different MBE systems. The heterostructure exhibits intense photoluminescence in the region of 1.3 mu m at room temperature. Perfect crystal InGaAs islands with height less than 10 nm are the sources of this radiation.

  18. Structural evolution of self-assisted GaAs nanowires grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas; Davydok, Anton; Pietsch, Ullrich [University of Siegen, Solid State Physics Group, Walter-Flex-Str. 3, 57072 Siegen (Germany); Breuer, Steffen; Geelhaar, Lutz [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2011-04-15

    GaAs nanowires are grown on Si(111) by self-assisted molecular beam epitaxy, and the ratio between wurtzite and zinc-blende phases is determined as function of nanowire length using asymmetric X-ray diffraction. We show that under the applied growth conditions, nanowires grow in both phases during the initial stage of growth, whereas the zinc-blende content increases with growth time and dominates in long nanowires. Compared to the zinc-blende units, the vertical lattice parameter of the wurtzite segments is 0.7% larger, as measured by the positions of respective diffraction peaks. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Preparation and structural properties of YBCO films grown on GaN/c-sapphire hexagonal substrate

    Energy Technology Data Exchange (ETDEWEB)

    Chromik, S., E-mail: stefan.chromik@savba.sk [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Gierlowski, P. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland); Spankova, M.; Dobrocka, E.; Vavra, I.; Strbik, V.; Lalinsky, T.; Sojkova, M. [Institute of Electrical Engineering, SAS, Dubravska cesta 9, 84104 Bratislava (Slovakia); Liday, J.; Vogrincic, P. [Department of Microelectronics, Slovak Technical University, Ilkovicova 3, 81219 Bratislava (Slovakia); Espinos, J.P. [Instituto de Ciencia de Materiales de Sevilla, Avda Americo Vespucio 49, 41092 Sevilla (Spain)

    2010-07-01

    Epitaxial YBCO thin films have been grown on hexagonal GaN/c-sapphire substrates using DC magnetron sputtering and pulsed laser deposition. An MgO buffer layer has been inserted between the substrate and the YBCO film as a diffusion barrier. X-ray diffraction analysis indicates a c-axis oriented growth of the YBCO films. {Phi}-scan shows surprisingly twelve maxima. Transmission electron microscopy analyses confirm an epitaxial growth of the YBCO blocks with a superposition of three a-b YBCO planes rotated by 120 deg. to each other. Auger electron spectroscopy and X-ray photoelectron spectroscopy reveal no surface contamination with Ga even if a maximum substrate temperature of 700 deg. C is applied.

  20. Structural and morphological properties of ITO thin films grown by magnetron sputtering

    Science.gov (United States)

    Ghorannevis, Z.; Akbarnejad, E.; Ghoranneviss, M.

    2015-10-01

    Physical properties of transparent and conducting indium tin oxide (ITO) thin films grown by radiofrequency (RF) magnetron sputtering are studied systematically by changing deposition time. The X-ray diffraction (XRD) data indicate polycrystalline thin films with grain orientations predominantly along the (2 2 2) and (4 0 0) directions. From atomic force microscopy (AFM) it is found that by increasing the deposition time, the roughness of the film increases. Scanning electron microscopy (SEM) images show a network of a high-porosity interconnected nanoparticles, which approximately have a pore size ranging between 20 and 30 nm. Optical measurements suggest an average transmission of 80 % for the ITO films. Sheet resistances are investigated using four-point probes, which imply that by increasing the film thickness the resistivities of the films decrease to 2.43 × 10-5 Ω cm.

  1. AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

    International Nuclear Information System (INIS)

    Kipshidze, G.; Kuryatkov, V.; Borisov, B.; Holtz, M.; Nikishin, S.; Temkin, H.

    2002-01-01

    Ultraviolet light-emitting diodes grown on Si(111) by gas-source molecular-beam epitaxy with ammonia are described. The layers are composed of superlattices of AlGaN/GaN and AlN/AlGaInN. The layers are doped n and p type with Si and Mg, respectively. Hole concentration of 4x10 17 cm -3 , with a mobility of 8 cm2/Vs, is measured in Al 0.4 Ga 0.6 N/GaN. We demonstrate effective n- and p-type doping of structures based on AlN/AlGaInN. Light-emitting diodes based on these structures show light emission between 290 and 334 nm

  2. Antiferromagnetic spinor condensates in a bichromatic superlattice

    Science.gov (United States)

    Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei

    2017-04-01

    A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

  3. Structural and magnetic properties of nickel nanowires grown in porous anodic aluminium oxide template by electrochemical deposition technique

    Science.gov (United States)

    Nugraha Pratama, Sendi; Kurniawan, Yudhi; Muhammady, Shibghatullah; Takase, Kouichi; Darma, Yudi

    2018-03-01

    We study the formation of nickel nanowires (Ni NWs) grown in porous anodic aluminium oxide (AAO) template by the electrochemical deposition technique. Here, the initial AAO template was grown by anodization of aluminium substrate in sulphuric acid solution. The cross-section, crystal structure, and magnetic properties of Ni NWs system were characterized by field-emission SEM, XRD, and SQUID. As a result, the highly-ordered Ni NWs are observed with the uniform diameter of 27 nm and the length from 31 to 163 nm. Based on XRD spectra analysis, Ni NWs have the face-centered cubic structure with the lattice parameter of 0.35 nm and average crystallite size of 17.19 nm. From SQUID measurement at room temperature, by maintaining the magnetic field perpendicular to Ni NWs axis, the magnetic hysteresis of Ni NWs system show the strong ferromagnetism with the coercivity and remanence ratio of ∼148 Oe and ∼0.23, respectively. The magnetic properties are also calculated by means of generalized gradient approximation methods. From the calculation result, we show that the ferromagnetism behavior comes from Ni NWs without any contribution from AAO template or the substrate. This study opens the potential application of Ni NWs system for novel functional magnetic devices.

  4. Polaritons in periodic and quasiperiodic structures

    CERN Document Server

    Albuquerque, Eudenilson L

    2004-01-01

    In recent years there have been exciting developments in techniques for producing multilayered structures of different materials, often with thicknesses as small as only a few atomic layers. These artificial structures, known as superlattices, can either be grown with the layers stacked in an alternating fashion (the periodic case) or according to some other well-defined mathematical rule (the quasiperiodic case). This book describes research on the excitations (or wave-like behavior) of these materials, with emphasis on how the material properties are coupled to photons (the quanta of the l

  5. Micro-hardness of InxGa(1-x)As superlattices. 'The Frogley conjecture'

    International Nuclear Information System (INIS)

    Jayaweera, N.B.

    2000-01-01

    Coherently strained In x Ga (1-x) As superlattices with alternating layers of opposite strain have been grown on InP substrates using Molecular Beam Epitaxy. Control of the layer strains is achieved by varying the indium composition and the structures are characterized using high-resolution x-ray diffraction. An optimized mathematical treatment of high-resolution x-ray data is presented for the determination of strain, composition and tilt of epitaxial strained layers. This analysis also provides guidance as to the best sets of reflections to measure. The method is applied explicitly to reciprocal space mapping, where errors are normally different in different reciprocal space directions, and compare results from rocking curve and reciprocal space analysis. Results are reported on the onset of plasticity in semiconductor strained layer superlattices, using nanoindentation with spherical indenters to observe the full stress-strain curve. The yield pressure is reduced by as much as a factor of two by the presence of the coherency strain. Varying the thicknesses and strains of the layers enables us to show that both sets of layers, compressive and tensile, reduce the yield pressure. This requires that a yield criterion must be satisfied over a finite volume, large enough to include layers of both signs. It is shown that the relevant yield criterion for our experimental data is the rate of change of elastic strain energy with plastic relaxation, integrated over a volume of the order of a micron across. In these studies, we have observed a large and reproducible size effect in the yield pressure and we show how the requirement of meeting a yield criterion over a finite volume naturally leads to the size effect. A theoretical analysis is given and quantative agreement with experiment is obtained. This is a crucial result for the understanding of nanoindentation and other systems in which stresses are highly inhomogeneous on a small scale. The result also has implications

  6. Optical Properties of InGaAs/ GaAs Multi Quantum Wells Structure Grown By Molecular Beam Epitaxy

    International Nuclear Information System (INIS)

    Mohd Sharizal Alias; Mohd Fauzi Maulud; Mohd Razman Yahya; Abdul Fatah Awang Mat; Suomalainen, Soile

    2008-01-01

    Inclusive analysis on the optical characteristics of InGaAs/ GaAs QW structure for 980 nm semiconductor laser operation is presented from experimental and theoretical point of view. The InGaAs/ GaAs quantum well structure is grown by molecular beam epitaxy at different indium composition and quantum well thickness for optical characteristic comparison. Photoluminescence spectra from the measurement show that the spectrum is in good agreement with the simulation results. Detail simulation on the material gain for the InGaAs/ GaAs quantum well as a function of carrier densities and operating temperature is also performed in order to optimize the semiconductor laser design for device fabrication. (author)

  7. Effects of buffer layer annealing temperature on the structural and optical properties of hydrothermal grown ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, X.Q.; Kim, C.R.; Lee, J.Y.; Heo, J.H.; Shin, C.M. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Lee, H.C. [Department of Mechatronics Engineering, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Jung, W.G. [School of Advanced Materials Engineering, Kookmin University, 861-1 Jeongneung-dong, Seongbuk-gu, Seoul 136-702 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-02-01

    ZnO was deposited on bare Si(1 0 0), as-deposited, and annealed ZnO/Si(1 0 0) substrates by hydrothermal synthesis. The effects of a ZnO buffer layer and its thermal annealing on the properties of the ZnO deposited by hydrothermal synthesis were studied. The grain size and root mean square (RMS) roughness values of the ZnO buffer layer increased after thermal annealing of the buffer layer. The effect of buffer layer annealing temperature on the structural and optical properties was investigated by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy. Hydrothermal grown ZnO deposited on ZnO/Si(1 0 0) annealed at 750 deg. C with the concentration of 0.3 M exhibits the best structural and optical properties.

  8. GaN and LED structures grown on pre-patterned silicon pillar arrays

    Energy Technology Data Exchange (ETDEWEB)

    Li, Shunfeng; Fuendling, Soenke; Soekmen, Uensal; Merzsch, Stephan; Neumann, Richard; Peiner, Erwin; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Hinze, Peter; Weimann, Thomas [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Jahn, Uwe; Trampert, Achim; Riechert, Henning [Paul-Drude-Institut fuer Festkoerperelektronik, Hausvoigteiplatz 5-7, 10117 Berlin (Germany)

    2010-01-15

    GaN nanorods (or nanowires) have attracted great interest in a variety of applications, e.g. high-efficiency light emitting diodes, monolithic white light emission and optical interconnection due to their superior properties. In contrast to the mostly investigated self-assembled growth of GaN nanorods, we performed GaN nanorod growth by pre-patterning of the Si substrates. The pattern was transferred to Si substrates by photolithography and cryo-temperature inductively-coupled plasma etching. These Si templates then were used for further GaN nanorod growth by metal-organic vapour phase epitaxy (MOVPE). The low temperature AlN nucleation layer had to be optimized since it differs from its 2D layer counterpart on the surface area and orientations. We found a strong influence of diffusion processes, i.e. the GaN grown on top of the Si nanopillars can deplete the GaN around the Si pillars. Transmission electron microscopy measurements demonstrated clearly that the threading dislocations bend to the side facets of the pyramidal GaN nanostructures and terminate. Cathodoluminescence measurements reveal a difference of In composition and/or thickness of InGaN quantum wells on the different facets of the pyramidal GaN nanostructures. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Structural and electronic characterization of graphene grown by chemical vapor deposition and transferred onto sapphire

    International Nuclear Information System (INIS)

    Joucken, Frédéric; Colomer, Jean-François; Sporken, Robert; Reckinger, Nicolas

    2016-01-01

    Highlights: • CVD graphene is transferred onto sapphire. • Transport measurements reveal relatively low charge carriers mobility. • Scanning probe microscopy experiments reveal the presence of robust contaminant layers between the graphene and the sapphire, responsible for the low carriers mobility. - Abstract: We present a combination of magnetotransport and local probe measurements on graphene grown by chemical vapor deposition on copper foil and subsequently transferred onto a sapphire substrate. A rather strong p-doping is observed (∼9 × 10 12 cm −2 ) together with quite low carrier mobility (∼1350 cm 2 /V s). Atomic force and tunneling imaging performed on the transport devices reveals the presence of contaminants between sapphire and graphene, explaining the limited performance of our devices. The transferred graphene displays ridges similar to those observed whilst graphene is still on the copper foil. We show that, on sapphire, these ridges are made of different thicknesses of the contamination layer and that, contrary to what was reported for hBN or certain transition metal dichalcogenides, no self-cleansing process of the sapphire substrate is observed.

  10. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

    Science.gov (United States)

    Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

    1996-09-01

    This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

  11. Structural and optical properties of pentacene films grown on differently oriented ZnO surfaces

    International Nuclear Information System (INIS)

    El Helou, M; Lietke, E; Helzel, J; Heimbrodt, W; Witte, G

    2012-01-01

    Pentacene films have been grown on two polar zinc oxide surfaces, i.e., ZnO(0001) and ZnO(0 0 0 1-bar ), as well as on the mixed-terminated ZnO(1 0 1-bar 0) and are characterized by means of atomic force microscopy (AFM), x-ray diffraction (XRD), and thermal desorption spectroscopy (TDS). In all cases, pentacene aggregates in an upright orientation without any evidence for the formation of an interface stabilized wetting layer. Additional films deposited on a highly-defective, oxygen-depleted ZnO(0 0 0 1-bar ) reveal no altered growth mode. Nearly identical optical absorption spectra have been measured for all films, thus corroborating a weak molecule-substrate interaction. Upon cooling, however, a slightly different relaxation behavior could be resolved for pentacene films on polar ZnO surfaces compared to pentacene on the mixed-terminated ZnO(1 0 1-bar 0) surface.

  12. Propagation of Nd magnetic phases in Nd/Sm(001) superlattices

    International Nuclear Information System (INIS)

    Soriano, S; Dufour, C; Dumesnil, K; Stunault, A

    2006-01-01

    The propagation of Nd long range magnetic order in the hexagonal and cubic sublattices has been investigated in double hexagonal compact Nd/Sm(001) superlattices by resonant x-ray magnetic scattering at the Nd L 2 absorption edge. For a superlattice with 3.7 nm thick Sm layers, the magnetic structure of the hexagonal sublattice propagates coherently through several bilayers, whereas the order in the cubic sublattice remains confined to single Nd blocks. For a superlattice with 1.4 nm thick Sm layers, the magnetic structures of both sublattices appear to propagate coherently through the superlattice. This is the first observation (i) of the long range coherent propagation of Nd order on the cubic sites between Nd blocks and (ii) of a different thickness dependence of the propagation of the Nd magnetic phases associated with the hexagonal and cubic sublattices. The propagation of the Nd magnetic order through Sm is interpreted in terms of generalized susceptibility of the Nd conduction electrons

  13. Surfactant effects of indium on cracking in AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy

    Science.gov (United States)

    Rodak, L. E.; Miller, C. M.; Korakakis, D.

    2011-01-01

    Aluminum Nitride (AlN) and Gallium Nitride (GaN) superlattice structures are often characterized by a network of cracks resulting from the large lattice mismatch and difference in thermal expansion coefficients, especially as the thickness of the layers increases. This work investigates the influence of indium as a surfactant on strain and cracking in AlN/GaN DBRs grown via Metal Organic Vapor Phase Epitaxy (MOVPE). DBRs with peak reflectivities ranging from 465 nm to 540 nm were grown and indium was introduced during the growth of the AlN layer. Image processing techniques were used to quantify the crack length per square millimeter and it was observed that indium has a significant effect on the crack formation and reduced the total crack length in these structures by a factor of two.

  14. Apocrustacyanin C(1) crystals grown in space and on earth using vapour-diffusion geometry: protein structure refinements and electron-density map comparisons.

    Science.gov (United States)

    Habash, Jarjis; Boggon, Titus J; Raftery, James; Chayen, Naomi E; Zagalsky, Peter F; Helliwell, John R

    2003-07-01

    Models of apocrustacyanin C(1) were refined against X-ray data recorded on Bending Magnet 14 at the ESRF to resolutions of 1.85 and 2 A from a space-grown and an earth-grown crystal, respectively, both using vapour-diffusion crystal-growth geometry. The space crystals were grown in the APCF on the NASA Space Shuttle. The microgravity crystal growth showed a cyclic nature attributed to Marangoni convection, thus reducing the benefits of the microgravity environment, as reported previously [Chayen et al. (1996), Q. Rev. Biophys. 29, 227-278]. A subsequent mosaicity evaluation, also reported previously, showed only a partial improvement in the space-grown crystals over the earth-grown crystals [Snell et al. (1997), Acta Cryst. D53, 231-239], contrary to the case for lysozyme crystals grown in space with liquid-liquid diffusion, i.e. without any major motion during growth [Snell et al. (1995), Acta Cryst. D52, 1099-1102]. In this paper, apocrustacyanin C(1) electron-density maps from the two refined models are now compared. It is concluded that the electron-density maps of the protein and the bound waters are found to be better overall for the structures of apocrustacyanin C(1) studied from the space-grown crystal compared with those from the earth-grown crystal, even though both crystals were grown using vapour-diffusion crystal-growth geometry. The improved residues are on the surface of the protein, with two involved in or nearby crystal lattice-forming interactions, thus linking an improved crystal-growth mechanism to the molecular level. The structural comparison procedures developed should themselves be valuable for evaluating crystal-growth procedures in the future.

  15. New Three-Dimensional Porous Electrode Concept: Vertically-Aligned Carbon Nanotubes Directly Grown on Embroidered Copper Structures

    Directory of Open Access Journals (Sweden)

    Noemí Aguiló-Aguayo

    2017-12-01

    Full Text Available New three-dimensional (3D porous electrode concepts are required to overcome limitations in Li-ion batteries in terms of morphology (e.g., shapes, dimensions, mechanical stability (e.g., flexibility, high electroactive mass loadings, and electrochemical performance (e.g., low volumetric energy densities and rate capabilities. Here a new electrode concept is introduced based on the direct growth of vertically-aligned carbon nanotubes (VA-CNTs on embroidered Cu current collectors. The direct growth of VA-CNTs was achieved by plasma-enhanced chemical vapor deposition (PECVD, and there was no application of any post-treatment or cleaning procedure. The electrochemical behavior of the as-grown VA-CNTs was analyzed by charge/discharge cycles at different specific currents and with electrochemical impedance spectroscopy (EIS measurements. The results were compared with values found in the literature. The as-grown VA-CNTs exhibit higher specific capacities than graphite and pristine VA-CNTs found in the literature. This together with the possibilities that the Cu embroidered structures offer in terms of specific surface area, total surface area, and designs provide a breakthrough in new 3D electrode concepts.

  16. New Three-Dimensional Porous Electrode Concept: Vertically-Aligned Carbon Nanotubes Directly Grown on Embroidered Copper Structures.

    Science.gov (United States)

    Aguiló-Aguayo, Noemí; Amade, Roger; Hussain, Shahzad; Bertran, Enric; Bechtold, Thomas

    2017-12-11

    New three-dimensional (3D) porous electrode concepts are required to overcome limitations in Li-ion batteries in terms of morphology (e.g., shapes, dimensions), mechanical stability (e.g., flexibility, high electroactive mass loadings), and electrochemical performance (e.g., low volumetric energy densities and rate capabilities). Here a new electrode concept is introduced based on the direct growth of vertically-aligned carbon nanotubes (VA-CNTs) on embroidered Cu current collectors. The direct growth of VA-CNTs was achieved by plasma-enhanced chemical vapor deposition (PECVD), and there was no application of any post-treatment or cleaning procedure. The electrochemical behavior of the as-grown VA-CNTs was analyzed by charge/discharge cycles at different specific currents and with electrochemical impedance spectroscopy (EIS) measurements. The results were compared with values found in the literature. The as-grown VA-CNTs exhibit higher specific capacities than graphite and pristine VA-CNTs found in the literature. This together with the possibilities that the Cu embroidered structures offer in terms of specific surface area, total surface area, and designs provide a breakthrough in new 3D electrode concepts.

  17. Annealing Effect on the Structural and Optical Properties of Sputter-Grown Bismuth Titanium Oxide Thin Films

    Directory of Open Access Journals (Sweden)

    José E. Alfonso

    2014-04-01

    Full Text Available The aim of this work is to assess the evolution of the structural and optical properties of BixTiyOz films grown by rf magnetron sputtering upon post-deposition annealing treatments in order to obtain good quality films with large grain size, low defect density and high refractive index similar to that of single crystals. Films with thickness in the range of 220–250 nm have been successfully grown. After annealing treatment at 600 °C the films show excellent transparency and full crystallization. It is shown that to achieve larger crystallite sizes, up to 17 nm, it is better to carry the annealing under dry air than under oxygen atmosphere, probably because the nucleation rate is reduced. The refractive index of the films is similar under both atmospheres and it is very high (n =2.5 at 589 nm. However it is still slightly lower than that of the single crystal value due to the polycrystalline morphology of the thin films.

  18. Structural, morphological and mechanical properties of niobium nitride thin films grown by ion and electron beams emanated from plasma

    Science.gov (United States)

    Siddiqui, Jamil; Hussain, Tousif; Ahmad, Riaz; Umar, Zeeshan A.; Abdus Samad, Ubair

    2016-05-01

    The influence of variation in plasma deposition parameters on the structural, morphological and mechanical characteristics of the niobium nitride films grown by plasma-emanated ion and electron beams are investigated. Crystallographic investigation made by X-ray diffractometer shows that the film synthesized at 10 cm axial distance with 15 plasma focus shots (PFS) exhibits better crystallinity when compared to the other deposition conditions. Morphological analysis made by scanning electron microscope reveals a definite granular pattern composed of homogeneously distributed nano-spheroids grown as clustered particles for the film synthesized at 10 cm axial distance for 15 PFS. Roughness analysis demonstrates higher rms roughness for the films synthesized at shorter axial distance and by greater number of PFS. Maximum niobium atomic percentage (35.8) and maximum average hardness (19.4 ± 0.4 GPa) characterized by energy-dispersive spectroscopy and nano-hardness analyzer respectively are observed for film synthesized at 10 cm axial distance with 15 PFS.

  19. The dependence of the tunneling characteristic on the electronic energy bands and the carrier’s states of Graphene superlattice

    Science.gov (United States)

    Yang, C. H.; Shen, G. Z.; Ao, Z. M.; Xu, Y. W.

    2016-09-01

    Using the transfer matrix method, the carrier tunneling properties in graphene superlattice generated by the Thue-Morse sequence and Kolakoski sequence are investigated. The positions and strength of the transmission can be modulated by the barrier structures, the incident energy and angle, the height and width of the potential. These carriers tunneling characteristic can be understood from the energy band structures in the corresponding superlattice systems and the carrier’s states in well/barriers. The transmission peaks above the critical incident angle rely on the carrier’s resonance in the well regions. The structural diversity can modulate the electronic and transport properties, thus expanding its applications.

  20. Emergence of the sub-THz central peak at phase transitions in artificial BaTiO3/(Ba,Sr)TiO3 superlattices

    International Nuclear Information System (INIS)

    Tikhonov, Yu.A.; Razumnaya, A.G.; Torgashev, V.I.; Zakharchenko, I.N.; Yuzyuk, Yu.I.; El Marssi, M.; Ortega, N.; Kumar, A.; Katiyar, R.S.

    2015-01-01

    A prominent central peak in the sub-THz frequency range was observed in the Raman spectra of BaTiO 3 /(Ba,Sr)TiO 3 (BT/BST) superlattice grown on (001)MgO substrate. Both soft and central mode show an anomaly around 200 K and 280 K, which can be correlated with orthorhombic to monoclinic phase transition of BST and BT, respectively. The observed temperature dependence of the central mode enabled us to explain rather broad temperature dependence of the dielectric permittivity previously observed in BT/BST superlattices. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  1. Zinc deficiency in field-grown pecan trees: changes in leaf nutrient concentrations and structure.

    Science.gov (United States)

    Ojeda-Barrios, Dámaris; Abadía, Javier; Lombardini, Leonardo; Abadía, Anunciación; Vázquez, Saúl

    2012-06-01

    Zinc (Zn) deficiency is a typical nutritional disorder in pecan trees [Carya illinoinensis (Wangenh.) C. Koch] grown under field conditions in calcareous soils in North America, including northern Mexico and south-western United States. The aim of this study was to assess the morphological and nutritional changes in pecan leaves affected by Zn deficiency as well as the Zn distribution within leaves. Zinc deficiency led to decreases in leaf chlorophyll concentrations, leaf area and trunk cross-sectional area. Zinc deficiency increased significantly the leaf concentrations of K and Ca, and decreased the leaf concentrations of Zn, Fe, Mn and Cu. All nutrient values found in Zn-deficient leaves were within the sufficiency ranges, with the only exception of Zn, which was approximately 44, 11 and 9 µg g(-1) dry weight in Zn-sufficient, moderately and markedly Zn-deficient leaves, respectively. Zinc deficiency led to decreases in leaf thickness, mainly due to a reduction in the thickness of the palisade parenchyma, as well as to increases in stomatal density and size. The localisation of Zn was determined using the fluorophore Zinpyr-1 and ratio-imaging technique. Zinc was mainly localised in the palisade mesophyll area in Zn-sufficient leaves, whereas no signal could be obtained in Zn-deficient leaves. The effects of Zn deficiency on the leaf characteristics of pecan trees include not only decreases in leaf chlorophyll and Zn concentrations, but also a reduction in the thickness of the palisade parenchyma, an increase in stomatal density and pore size and the practical disappearance of Zn leaf pools. These characteristics must be taken into account to design strategies to correct Zn deficiency in pecan tree in the field. Copyright © 2012 Society of Chemical Industry.

  2. Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

    2015-11-15

    Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  3. Ab initio study of thermoelectric properties of doped SnO_2 superlattices

    International Nuclear Information System (INIS)

    Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

    2015-01-01

    Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  4. Surface electronic and structural properties of nanostructured titanium oxide grown by pulsed laser deposition

    NARCIS (Netherlands)

    Fusi, M.; Maccallini, E.; Caruso, T.; Casari, C. S.; Bassi, A. Li; Bottani, C. E.; Rudolf, P.; Prince, K. C.; Agostino, R. G.

    Titanium oxide nanostructured thin films synthesized by pulsed laser deposition (PLD) were here characterized with a multi-technique approach to investigate the relation between surface electronic, structural and morphological properties. Depending on the growth parameters, these films present

  5. Photoluminescence study of ZnO structures grown by aqueous chemical growth

    International Nuclear Information System (INIS)

    Kenanakis, G.; Androulidaki, M.; Vernardou, D.; Katsarakis, N.; Koudoumas, E.

    2011-01-01

    ZnO micro-structures were deposited by aqueous chemical growth on Si (100) substrates, their morphology and size depending on the growth period. Characterization of the structures was performed using X-ray diffraction, scanning electron microscopy and Raman spectroscopy. Photoluminescence spectra recorded at 18 and 295 K for 325 nm CW excitation indicated that these are strongly affected by the morphology of the structures. Rods and tubes emit stronger UV radiation, in contrast to stronger yellow-green emission observed for flower-like structures. A red shift of the UV emission was found for increasing input power, while, thermal annealing of the samples induced stimulated emission for quite high excitation intensities.

  6. Disorder influence on the magnetic properties of La{sub 0.55}Sr{sub 0.45}MnO{sub 3}/SrTiO{sub 3} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Haberkorn, N. E-mail: nhaberk@cab.cnea.gov.ar; Sirena, M.; Guimpel, J.; Steren, L.B

    2004-05-01

    The structural and physical properties of La{sub 0.55}Sr{sub 0.45}MnO{sub 3}/SrTiO{sub 3} superlattices grown by magnetron sputtering are studied. Two deposition temperatures and different mismatched substrates and buffer layers were used. The structure was determined by refinement through X-ray diffraction pattern fitting. The results indicate 1 unit cell (u.c.) interdiffusion at the interfaces and a 1 u.c. layer thickness fluctuation, i.e. roughness. In-plane hysteresis loops show the expected ferromagnetic behavior, while the perpendicular-to-plane hysteresis loops show anomalies which could evidence magnetic domain size inhomogeneities and stress.

  7. Analysis of Side-Wall Structure of Grown-in Twin-Type Octahedral Defects in Czochralski Silicon

    Science.gov (United States)

    Ueki, Takemi; Itsumi, Manabu; Takeda, Tadao

    1998-04-01

    We analyzed the side-wall structure of grown-in octahedral defects in Czochralski silicon standard wafers for large-scale integrated circuits. There are two types of twin octahedral defects: an overlapping type and an adjacent type. In the twin octahedral defects of the overlapping type, a hole is formed in the connection part. The side-wall layer in the hole part is formed continually and is the same thickness as the side-wall layers of both octahedrons. In the twin octahedral defects of the adjacent type, a partition layer is formed in the connection part. Our electron energy-loss spectroscopy analyses identified that the side-wall layer includes SiO2.

  8. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Directory of Open Access Journals (Sweden)

    B. K. Barick

    2015-05-01

    Full Text Available Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ̄ 0 ] direction (a-plane to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  9. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Science.gov (United States)

    Barick, B. K.; Rodríguez-Fernández, Carlos; Cantarero, Andres; Dhar, S.

    2015-05-01

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [ 11 2 ¯ 0 ] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  10. Structural and electronic properties of InN nanowire network grown by vapor-liquid-solid method

    Energy Technology Data Exchange (ETDEWEB)

    Barick, B. K., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in; Dhar, S., E-mail: bkbarick@gmail.com, E-mail: subho-dh@yahoo.co.in [Department of Physics, Indian Institute of Technology, Bombay, Mumbai-400076 (India); Rodríguez-Fernández, Carlos; Cantarero, Andres [Materials Science Institute, University of Valencia, PO Box 22085, 46071 Valencia (Spain)

    2015-05-15

    Growth of InN nanowires have been carried out on quartz substrates at different temperatures by vapor-liquid-solid (VLS) technique using different thicknesses of Au catalyst layer. It has been found that a narrow window of Au layer thickness and growth temperature leads to multi-nucleation, in which each site acts as the origin of several nanowires. In this multi-nucleation regime, several tens of micrometer long wires with diameter as small as 20 nm are found to grow along [112{sup -}0] direction (a-plane) to form a dense network. Structural and electronic properties of these wires are studied. As grown nanowires show degenerate n-type behavior. Furthermore, x-ray photoemission study reveals an accumulation of electrons on the surface of these nanowires. Interestingly, the wire network shows persistence of photoconductivity for several hours after switching off the photoexcitation.

  11. Chemical composition of dome-shaped structures grown on titanium by multi-pulse Nd:YAG laser irradiation

    International Nuclear Information System (INIS)

    Gyoergy, E.; Perez del Pino, A.; Serra, P.; Morenza, J.L.

    2004-01-01

    The specific dome-shaped structures were grown by multi-pulse Nd:YAG (λ=1.064 μm, τ=∼300 ns, and ν=30 kHz) laser irradiation of titanium targets in air at atmospheric pressure. The laser intensity values were chosen below the single-laser-pulse melting threshold of titanium. The chemical composition of the structures was studied as a function of laser pulse number as well as laser intensity, both at the outer surface layer and in depth. Micro-Raman spectroscopy, Auger electron spectroscopy (AES), and wavelength dispersive X-ray spectroscopy (WDX) were used as diagnostic techniques. Morphological investigations were performed by scanning electron microscopy. The obtained results revealed a lower oxygen concentration in the centre of the structures as compared to the borders and a lower concentration on the surface than in the depth. Moreover, it was found that the stoichiometry of the formed TiO 2-x oxides increases from the structures centre towards the border and from the surface towards the depth

  12. Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadookh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Sidorov, Yu. G.; Vasiliev, V. V.

    2008-01-01

    The effect of near-surface graded-gap layers on the electrical characteristics of MIS structures fabricated based on heteroepitaxial Hg 1-x Cd x Te films grown by molecular beam epitaxy with a two-layer SiO 2 /Si 3 N 4 insulator and anodic oxide film is studied experimentally. It is shown that a larger modulation of capacitance (depth and width of the valley) is observed compared with the structures without the graded-gap layer. The field dependences of photovoltage of MIS structures with the graded-gap layers had a classical form and were characterized by a drop only in the enrichment region. For the structures without the graded-gap layer with x = 0.22, a drop in the voltage dependence of the photocurrent is observed in the region of pronounced inversion. This drop is governed by limitation of the space charge region by processes of tunneling generation via deep levels. The properties of the HgCdTe-insulator interfaces are studied.

  13. Evaluation of defect density by top-view large scale AFM on metamorphic structures grown by MOVPE

    Energy Technology Data Exchange (ETDEWEB)

    Gocalinska, Agnieszka, E-mail: agnieszka.gocalinska@tyndall.ie; Manganaro, Marina; Dimastrodonato, Valeria; Pelucchi, Emanuele

    2015-09-15

    Highlights: • Metamorphic buffer layers of In{sub x}Ga{sub 1−x}As were grown by MOVPE and characterised by AFM and TEM. • It was found that AFM provides sufficient information to estimate threading defect density in metamorphic structures, even when significant roughness is present. • When planar-view TEM is lacking, a combination of cross-sectional TEM and large scale AFM can provide good evaluation of the material quality. • It is fast, cheap and non-destructive – can be very useful in development process of complicated structures, requiring multiple test growths and characterisation. - Abstract: We demonstrate an atomic force microscopy based method for estimation of defect density by identification of threading dislocations on a non-flat surface resulting from metamorphic growth. The discussed technique can be applied as an everyday evaluation tool for the quality of epitaxial structures and allow for cost reduction, as it lessens the amount of the transmission electron microscopy analysis required at the early stages of projects. Metamorphic structures with low surface defectivities (below 10{sup 6}) were developed successfully with the application of the technique, proving its usefulness in process optimisation.

  14. Study of the Morphological, Structural and Photoelectrochemical Properties of TiO{sub 2} Nanorods grown by Hydrothermal Method

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hayoung; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-01-15

    We investigated the effects of growth duration on the morphological, structural, and photoelectrochemical properties of TiO{sub 2} nanorods grown on a TiO{sub 2}-buffered fluorine-doped tin oxide (FTO) substrate using the hydrothermal method. From the study, we found that the photoelectrochemical properties were mainly dependent on the nanorod length and (002) XRD peak intensity, which indicates vertical growth of the TiO{sub 2}. The morphological and structural properties of the TiO{sub 2} nanorods largely affect their photoelectrochemical properties. The photocurrent density was increased when the growth duration was increased from 1 hour to 4 hours, and then changed little above 4 hours. Consequently, the highest photocurrent density, 0.897 mA/cm{sup 2} (at 1.0 V vs. SCE), was obtained from the 8 hour-sample which had good morphological and structural properties. We used field emission scanning electron microscopy (FE-SEM) for analysis of the morphological properties, x-ray diffraction (XRD) for structural properties, and three-electrode potentiostat for photoelectrochemical properties.

  15. Electrical properties of MBE grown Si{sub 3}N{sub 4}-cubic GaN MIS structures

    Energy Technology Data Exchange (ETDEWEB)

    Zado, A.; Lischka, K.; As, D.J. [University of Paderborn, Faculty of Science, Department of Physics, Warburger Str. 100, 33098 Paderborn (Germany)

    2012-03-15

    In this work we report on the electrical characterization of non-polar cubic GaN metal-insulator-semiconductor (MIS) structures. Si{sub 3}N{sub 4} layers were deposited in-situ on top of cubic GaN grown on 3C-SiC (001) substrates. The electric characteristics of the MIS structures are measured by capacitance and admittance spectroscopy techniques. From the hysteresis in the capacitance-voltage curves and the peak height of the conductance G{sub p} -{omega} frequency curves the interface state densities are calculated. We find interface traps about 0.3 eV below the conduction band. The density of these traps is D{sub it} = 2.5x10{sup 11} cm{sup -2}eV{sup -1}. This is one order of magnitude lower than in MIS structures with a Si{sub 3}N{sub 4} insulator produced by plasma enhanced vapour deposition and two orders of magnitude lower than in MIS structures on c-GaN with SiO{sub 2} as insulator (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Crystal structure and properties of tetragonal EuAg4In8 grown by metal flux technique

    International Nuclear Information System (INIS)

    Subbarao, Udumula; Sarkar, Sumanta; Peter, Sebastian C.

    2015-01-01

    The compound EuAg 4 In 8 has been obtained as single crystals in high yield from reactions run in liquid indium. X-ray diffraction on single crystals suggests that EuAg 4 In 8 crystallizes in the CeMn 4 Al 8 structure type, tetragonal space group I4/mmm with lattice constants a=b=9.7937(2) Å and c=5.7492(2) Å. Crystal structure of EuAg 4 In 8 is composed of pseudo Frank–Kasper cages occupied by one europium atom in each ring, which are shared through the corner along the ab plane resulting in a three dimensional network. The magnetic susceptibility of EuAg 4 In 8 was measured in the temperature range 2–300 K, which obeyed Curie–Weiss law above 50 K. Magnetic moment value calculated from the fitting indicates the presence of divalent europium, which was confirmed by X-ray absorption near edge spectroscopy. Electrical resistivity measurements suggest that EuAg 4 In 8 is metallic in nature with a probable Fermi liquid behavior at low temperature. - Graphical abstract: The tetragonal EuAg 4 In 8 has been grown as single crystals from reactions run in liquid indium. Magnetic and XANES measurements suggest divalent nature of Eu and resistivity measurements suggest metallic nature. - Highlights: • EuAg 4 In 8 phase having tetragonal phase is grown by metal flux technique. • Magnetic and XANES measurements exhibit divalent nature of Eu in EuAg 4 In 8 . • Resistivity measurement suggests metallic nature and probable Fermi liquid behavior

  17. Magnetic and structural properties of Co{sub 2}FeAl thin films grown on Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Belmeguenai, Mohamed, E-mail: belmeguenai.mohamed@univ-paris13.fr [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Tuzcuoglu, Hanife [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France); Gabor, Mihai; Petrisor, Traian [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Tiusan, Coriolan [Center for Superconductivity, Spintronics and Surface Science, Technical University of Cluj-Napoca, Street Memorandumului No. 28, RO-400114 Cluj-Napoca (Romania); Institut Jean Lamour, CNRS, Université de Nancy, BP 70239, F-54506 Vandoeuvre (France); Berling, Dominique [IS2M (CNRS-LRC 7228), 15 rue Jean Starcky, Université de Haute-Alsace, BP 2488, 68057 Mulhouse-Cedex (France); Zighem, Fatih; Mourad Chérif, Salim [LSPM (CNRS-UPR 3407) 99 Avenue Jean-Baptiste Clément Université Paris 13, 93430 Villetaneuse (France)

    2015-01-01

    The correlation between magnetic and structural properties of Co{sub 2}FeAl (CFA) thin films of different thicknesses (10 nmgrown at room temperature on MgO-buffered Si/SiO{sub 2} substrates and annealed at 600 °C has been studied. x-ray diffraction (XRD) measurements revealed an (011) out-of-plane textured growth of the films. The deduced lattice parameter increases with the film thickness. Moreover, pole figures showed no in-plane preferential growth orientation. The magneto-optical Kerr effect hysteresis loops showed the presence of a weak in-plane uniaxial anisotropy with a random easy axis direction. The coercive field, measured with the applied field along the easy axis direction, and the uniaxial anisotropy field increase linearly with the inverse of the CFA thickness. The microstrip line ferromagnetic resonance measurements for in-plane and perpendicular applied magnetic fields revealed that the effective magnetization and the uniaxial in-plane anisotropy field follow a linear variation versus the inverse CFA thickness. This allows deriving a perpendicular surface anisotropy coefficient of −1.86 erg/cm{sup 2}. - Highlights: • Various Co{sub 2}FeAl thin films were grown on a Si(001) substrates and annealed at 600 °C. • The thickness dependence of magnetic and structural properties has been studied. • X-ray measurements revealed an (011) out-of-plane textured growth of the films. • The easy axis coercive field varies linearly with the inverse CFA thickness. • The effective magnetization increases linearly with the inverse film thickness.

  18. Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

    Directory of Open Access Journals (Sweden)

    Debashis De

    2011-07-01

    Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

  19. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  20. Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures.

    Science.gov (United States)

    Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Zhou, Shizhong; Li, Guoqiang

    2015-11-13

    2 inch-diameter GaN films with homogeneous thickness distribution have been grown on AlN/Si(111) hetero-structures by pulsed laser deposition (PLD) with laser rastering technique. The surface morphology, crystalline quality, and interfacial property of as-grown GaN films are characterized in detail. By optimizing the laser rastering program, the ~300 nm-thick GaN films grown at 750 °C show a root-mean-square (RMS) thickness inhomogeneity of 3.0%, very smooth surface with a RMS surface roughness of 3.0 nm, full-width at half-maximums (FWHMs) for GaN(0002) and GaN(102) X-ray rocking curves of 0.7° and 0.8°, respectively, and sharp and abrupt AlN/GaN hetero-interfaces. With the increase in the growth temperature from 550 to 850 °C, the surface morphology, crystalline quality, and interfacial property of as-grown ~300 nm-thick GaN films are gradually improved at first and then decreased. Based on the characterizations, the corresponding growth mechanisms of GaN films grown on AlN/Si hetero-structures by PLD with various growth temperatures are hence proposed. This work would be beneficial to understanding the further insight of the GaN films grown on Si(111) substrates by PLD for the application of GaN-based devices.

  1. Structural and electronic properties of polar MnO ultrathin film grown on Ag(111)

    Energy Technology Data Exchange (ETDEWEB)

    Kundu, Asish K., E-mail: asish.kundu@saha.ac.in; Menon, Krishnakumar S. R. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 70064 (India)

    2016-05-23

    Surface electronic structure of ultrathin polar MnO film was studied by Low-energy Electron Diffraction (LEED) and Photoemission Spectroscopic (PES) techniques. Epitaxial monolayer to facet formation with increasing film thickness has been observed by LEED. Our LEED result shows p(2x2) surface reconstruction along with facet formation, stabilize the polar MnO(111) surface. The core levels and the valence band electronic structure of MnO films have been studied as a function of film thickness using X-ray and ultraviolet photoelectron spectroscopy techniques.

  2. Optical and micro-structural characterizations of MBE grown indium gallium nitride polar quantum dots

    KAUST Repository

    Elafandy, Rami T.

    2011-12-01

    Comparison between indium rich (27%) InGaN/GaN quantum dots (QDs) and their underlying wetting layer (WL) is performed by means of optical and structural characterizations. With increasing temperature, micro-photoluminescence (μPL) study reveals the superior ability of QDs to prevent carrier thermalization to nearby traps compared to the two dimensional WL. Thus, explaining the higher internal quantum efficiency of the QD nanostructure compared to the higher dimensional WL. Structural characterization (X-ray diffraction (XRD)) and transmission electron microscopy (TEM)) reveal an increase in the QD indium content over the WL indium content which is due to strain induced drifts. © 2011 IEEE.

  3. Broadband mid-infrared superlattice light-emitting diodes

    Science.gov (United States)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  4. Nanophysics in graphene: neutrino physics in quantum rings and superlattices.

    Science.gov (United States)

    Fertig, H A; Brey, Luis

    2010-12-13

    Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.

  5. Nanostructured PLD-grown gadolinia doped ceria: Chemical and structural characterization by transmission electron microscopy techniques

    DEFF Research Database (Denmark)

    Rodrigo, Katarzyna Agnieszka; Wang, Hsiang-Jen; Heiroth, Sebastian

    2011-01-01

    The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss spec......, indicate apparent variation of the ceria valence state across and along the film. No element segregation to the grain boundaries is detected. These results are discussed in the context of solid oxide fuel cell applications.......The morphology as well as the spatially resolved elemental and chemical characterization of 10 mol% gadolinia doped ceria (CGO10) structures prepared by pulsed laser deposition (PLD) technique are investigated by scanning transmission electron microscopy accompanied with electron energy loss...... spectroscopy and energy dispersive X-ray spectroscopy. A dense, columnar and structurally inhomogeneous CGO10 film, i.e. exhibiting grain size refinement across the film thickness, is obtained in the deposition process. The cerium M4,5 edges, used to monitor the local electronic structure of the grains...

  6. Superlattices assembled through shape-induced directional binding

    Science.gov (United States)

    Lu, Fang; Yager, Kevin G.; Zhang, Yugang; Xin, Huolin; Gang, Oleg

    2015-04-01

    Organization of spherical particles into lattices is typically driven by packing considerations. Although the addition of directional binding can significantly broaden structural diversity, nanoscale implementation remains challenging. Here we investigate the assembly of clusters and lattices in which anisotropic polyhedral blocks coordinate isotropic spherical nanoparticles via shape-induced directional interactions facilitated by DNA recognition. We show that these polyhedral blocks--cubes and octahedrons--when mixed with spheres, promote the assembly of clusters with architecture determined by polyhedron symmetry. Moreover, three-dimensional binary superlattices are formed when DNA shells accommodate the shape disparity between nanoparticle interfaces. The crystallographic symmetry of assembled lattices is determined by the spatial symmetry of the block's facets, while structural order depends on DNA-tuned interactions and particle size ratio. The presented lattice assembly strategy, exploiting shape for defining the global structure and DNA-mediation locally, opens novel possibilities for by-design fabrication of binary lattices.

  7. Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

    International Nuclear Information System (INIS)

    Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

    2009-01-01

    Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

  8. Structural characterization of oxidized allotaxially grown CoSi2 layers by x-ray scattering

    International Nuclear Information System (INIS)

    Kaendler, I. D.; Seeck, O. H.; Schlomka, J.-P.; Tolan, M.; Press, W.; Stettner, J.; Kappius, L.; Dieker, C.; Mantl, S.

    2000-01-01

    A series of buried CoSi 2 layers prepared by a modified molecular beam epitaxy process (allotaxy) and a subsequent wet-oxidation process was investigated by x-ray scattering. The oxidation time which determines the depth in which the CoSi 2 layers are located within the Si substrates has been varied during the preparation. The electron density profiles and the structure of the interfaces were extracted from specular reflectivity and diffuse scattering measurements. Crystal truncation rod investigations yielded the structure on an atomic level (crystalline quality). It turns out that the roughness of the CoSi 2 layers increases drastically with increasing oxidation time, i.e., with increasing depth of the buried layers. Furthermore, the x-ray data reveal that the oxidation growth process is diffusion limited. (c) 2000 American Institute of Physics

  9. Structural transformations in MoOx thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E.; Escobar-Alarcon, L.

    2004-01-01

    In this work, laser-induced crystallization in MoO x thin films (1.8≤x≤2.1) is reported. This transformation involves a MoO x oxidation and subsequently a crystallization process from amorphous MoO 3 to crystalline αMoO 3 . For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO x to the thermodynamically stable αMoO 3 crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO x to a mixture of αMoO 3 and the thermodynamically unstable βMoO 3 crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  10. Structural transformations in MoO{sub x} thin films grown by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Camacho-Lopez, M.A.; Haro-Poniatowski, E. [Departamento de Fisica, Laboratorio de Optica Cuantica, Universidad Autonoma Metropolitana Iztapalapa, Apdo. Postal 55-534, 09340, Mexico D. F. (Mexico); Escobar-Alarcon, L. [Departamento de Fisica, Instituto Nacional de Investigaciones Nucleares, Apdo. Postal 18-1027, 11801, Mexico D. F. (Mexico)

    2004-01-01

    In this work, laser-induced crystallization in MoO{sub x} thin films (1.8{<=}x{<=}2.1) is reported. This transformation involves a MoO{sub x} oxidation and subsequently a crystallization process from amorphous MoO{sub 3} to crystalline {alpha}MoO{sub 3}. For comparison purposes crystallization is induced thermally, in an oven, as well. The crystallization kinetics is monitored by Raman spectroscopy; a threshold in the energy density necessary to induce the phase transformation is determined in the case of photo-crystallization. This threshold depends on the type of substrate on which the film is deposited. For the thin films deposited on glass substrates, the structural transformation is from amorphous MoO{sub x} to the thermodynamically stable {alpha}MoO{sub 3} crystalline phase. For the thin films deposited on Si(100) the structural transformation is from amorphous MoO{sub x} to a mixture of {alpha}MoO{sub 3} and the thermodynamically unstable {beta}MoO{sub 3} crystalline phases. The structural transformations are also characterized by scanning electron microscopy and light-transmission experiments. (orig.)

  11. Structural investigations of silicon nanostructures grown by self-organized island formation for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Roczen, Maurizio; Malguth, Enno; Barthel, Thomas; Gref, Orman; Toefflinger, Jan A.; Schoepke, Andreas; Schmidt, Manfred; Ruske, Florian; Korte, Lars; Rech, Bernd [Institute for Silicon Photovoltaics, Helmholtz-Zentrum Berlin, Berlin (Germany); Schade, Martin; Leipner, Hartmut S. [Martin-Luther-Universitaet Halle-Wittenberg, Interdisziplinaeres Zentrum fuer Materialwissenschaften, Halle (Germany); Callsen, Gordon; Hoffmann, Axel [Technische Universitaet Berlin, Institut fuer Festkoerperphysik, Berlin (Germany); Phillips, Matthew R. [University of Technology Sydney, Department of Physics and Advanced Materials, NSW (Australia)

    2012-09-15

    The self-organized growth of crystalline silicon nanodots and their structural characteristics are investigated. For the nanodot synthesis, thin amorphous silicon (a-Si) layers with different thicknesses have been deposited onto the ultrathin (2 nm) oxidized (111) surface of Si wafers by electron beam evaporation under ultrahigh vacuum conditions. The solid phase crystallization of the initial layer is induced by a subsequent in situ annealing step at 700 C, which leads to the dewetting of the initial a-Si layer. This process results in the self-organized formation of highly crystalline Si nanodot islands. Scanning electron microscopy confirms that size, shape, and planar distribution of the nanodots depend on the thickness of the initial a-Si layer. Cross-sectional investigations reveal a single-crystalline structure of the nanodots. This characteristic is observed as long as the thickness of the initial a-Si layer remains under a certain threshold triggering coalescence. The underlying ultra-thin oxide is not structurally affected by the dewetting process. Furthermore, a method for the fabrication of close-packed stacks of nanodots is presented, in which each nanodot is covered by a 2 nm thick SiO{sub 2} shell. The chemical composition of these ensembles exhibits an abrupt Si/SiO{sub 2} interface with a low amount of suboxides. A minority charge carrier lifetime of 18 {mu}s inside of the nanodots is determined. (orig.)

  12. Preparation, Structural and Dielectric Properties of Solution Grown Polyvinyl Alcohol(PVA) Film

    Science.gov (United States)

    Nangia, Rakhi; Shukla, Neeraj K.; Sharma, Ambika

    2017-08-01

    Flexible dielectrics with high permittivity have been investigated extensively due to their applications in electronic industry. In this work, structural and electrical characteristics of polymer based film have been analysed. Poly vinyl alcohol (PVA) film was prepared by solution casting method. X-ray diffraction (XRD) characterization technique is used to investigate the structural properties. The semi-crystalline nature has been determined by the analysis of the obtained XRD pattern. Electrical properties of the synthesized film have been analysed from the C-V and I-V curves obtained at various frequencies and temperatures. Low conductivity values confirm the insulating behaviour of the film. However, it is found that conductivity increases with temperature. Also, the dielectric permittivity is found to be higher at lower frequencies and higher temperatures, that proves PVA to be an excellent dielectric material which can be used in interface electronics. Dielectric behaviour of the film has been explained based on dipole orientations to slow and fast varying electric field. However further engineering can be done to modulate the structural, electrical properties of the film.

  13. Photoluminescence and structural properties of unintentional single and double InGaSb/GaSb quantum wells grown by MOVPE

    Science.gov (United States)

    Ahia, Chinedu Christian; Tile, Ngcali; Botha, Johannes R.; Olivier, E. J.

    2018-04-01

    The structural and photoluminescence (PL) characterization of InGaSb quantum well (QW) structures grown on GaSb substrate (100) using atmospheric pressure Metalorganic Vapor Phase Epitaxy (MOVPE) is presented. Both structures (single and double-InGaSb QWs) were inadvertently formed during an attempt to grow capped InSb/GaSb quantum dots (QDs). In this work, 10 K PL peak energies at 735 meV and 740 meV are suggested to be emissions from the single and double QWs, respectively. These lines exhibit red shifts, accompanied by a reduction in their full-widths at half-maximum (FWHM) as the excitation power decreases. The presence of a GaSb spacer in the double QW was found to increase the strength of the PL emission, which consequently gives rise to a reduced blue-shift and broadening of the PL emission line observed for the double QW with an increase in laser power, while the low thermal activation energy for the quenching of the PL from the double QW is attributed to the existence of threading dislocations, as seen in the bright field TEM image for this sample.

  14. Surface termination structure of α-Ga{sub 2}O{sub 3} film grown by mist chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tamba, Daiki; Kubo, Osamu, E-mail: okubo@eei.eng.osaka-u.ac.jp; Osaka, Shun; Takahashi, Kazuki; Tabata, Hiroshi; Katayama, Mitsuhiro [Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, Suita 565-0871 (Japan); Oda, Masaya [Photonics and Electronics Science and Engineering Center, Graduate School of Engineering, Kyoto University, Kyoto 615-8520 (Japan); FLOSFIA Inc., 1-36 Goryoohara, Kyoto 615-8245 (Japan); Kaneko, Kentaro; Fujita, Shizuo [Photonics and Electronics Science and Engineering Center, Graduate School of Engineering, Kyoto University, Kyoto 615-8520 (Japan)

    2016-06-20

    The surface structure of α-Ga{sub 2}O{sub 3}(0001) grown on an α-Al{sub 2}O{sub 3}(0001) substrate by mist chemical vapor deposition was studied by coaxial impact-collision ion scattering spectroscopy (CAICISS) and atomic force microscopy (AFM). The minimum step height observed in the AFM image was 0.21 ± 0.01 nm, coinciding with the height of three atomic layers of α-Ga{sub 2}O{sub 3}(0001). It was revealed by CAICISS analysis that the surface of α-Ga{sub 2}O{sub 3}(0001) is terminated by a Ga layer followed by an O layer, which is consistent with the surface termination of α-Al{sub 2}O{sub 3}(0001). A structural model taking surface relaxation into account was also constructed by fitting the simulated curve for the azimuth angle dependence of the Ga intensity to the experimental dependence. The resultant structural model is similar to the model of an α-Al{sub 2}O{sub 3}(0001) surface, which indicates analogous behavior in corundum crystals.

  15. Manipulation of morphology and structure of the top of GaAs nanowires grown by molecular-beam epitaxy

    Science.gov (United States)

    Li, Lixia; Pan, Dong; Yu, Xuezhe; So, Hyok; Zhao, Jianhua

    2017-10-01

    Self-catalyzed GaAs nanowires (NWs) are grown on Si (111) substrates by molecular-beam epitaxy. The effect of different closing sequences of the Ga and As cell shutters on the morphology and structural phase of GaAs NWs is investigated. For the sequences of closing the Ga and As cell shutters simultaneously or closing the As cell shutter 1 min after closing the Ga cell shutter, the NWs grow vertically to the substrate surface. In contrast, when the As cell shutter is closed first, maintaining the Ga flux is found to be critical for the following growth of GaAs NWs, which can change the growth direction from [111] to . The evolution of the morphology and structural phase transition at the tips of these GaAs NWs confirm that the triple-phase-line shift mode is at work even for the growth with different cell shutter closing sequences. Our work will provide new insights for better understanding of the growth mechanism and realizing of the morphology and structure control of the GaAs NWs. Project supported partly by the MOST of China (No. 2015CB921503), the National Natural Science Foundation of China (Nos. 61504133, 61334006, 61404127), and Youth Innovation Promotion Association, CAS (No. 2017156).

  16. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    International Nuclear Information System (INIS)

    Poudel, P.R.; Poudel, P.P.; Paramo, J.A.; Strzhemechny, Y.M.; Rout, B.; McDaniel, F.D.

    2015-01-01

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C - ) at a fluence of 3 x 10 17 atoms/cm 2 was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H 2 + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main contributors to the observed

  17. Structural and optical properties of 70-keV carbon ion beam synthesized carbon nanoclusters in thermally grown silicon dioxide

    Energy Technology Data Exchange (ETDEWEB)

    Poudel, P.R. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); Intel Corporation, Rio Rancho, NM (United States); Poudel, P.P. [University of Kentucky, Department of Chemistry, Lexington, KY (United States); Paramo, J.A.; Strzhemechny, Y.M. [Texas Christian University, Department of Physics and Astronomy, Fort Worth, TX (United States); Rout, B. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States); University of North Texas, Center for Advanced Research and Technology, Denton, TX (United States); McDaniel, F.D. [University of North Texas, Ion Beam Modification and Analysis Laboratory, Department of Physics, Denton, TX (United States)

    2014-09-18

    The structural and optical properties of carbon nanoclusters formed in thermally grown silicon dioxide film via the ion beam synthesis process have been investigated. A low-energy (70 keV) carbon ion beam (C{sup -}) at a fluence of 3 x 10{sup 17} atoms/cm{sup 2} was used for implantation into a thermally grown silicon dioxide layer (500 nm thick) on a Si (100) wafer. Several parts of the implanted samples were subsequently annealed in a gas mixture (4 % H{sub 2} + 96 % Ar) at 900 C for different time periods. The as-implanted and annealed samples were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy, Raman spectroscopy, transmission electron microscopy (TEM), and photoluminescence spectroscopy (PL). The carbon ion implantation depth profile was simulated using a widely used Monte Carlo-based simulation code SRIM-2012. Additionally, the elemental depth profile of the implanted carbon along with host elements of silicon and oxygen were simulated using a dynamic ion-solid interaction code T-DYN, which incorporates the effects of the surface sputtering and gradual change in the elemental composition in the implanted layers due to high-fluence ion implantation. The elemental depth profile obtained from the XPS measurements matches closely to the T-DYN predictions. Raman measurements indicate the formation of graphitic phases in the annealed samples. The graphitic peak (G-peak) was found to be increased with the annealing time duration. In the sample annealed for 10 min, the sizes of the carbon nanoclusters were found to be 1-4 nm in diameter using TEM. The PL measurements at room temperature using a 325-nm laser show broad-band emissions in the ultraviolet to visible range in the as-implanted sample. Intense narrow bands along with the broad bands were observed in the annealed samples. The defects present in the as-grown samples along with carbon ion-induced defect centers in the as-implanted samples are the main

  18. The solitary electromagnetic waves in the graphene superlattice

    International Nuclear Information System (INIS)

    Kryuchkov, Sergey V.; Kukhar', Egor I.

    2013-01-01

    d’Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is analyzed. The possibility of the propagation of the solitary electromagnetic waves in the graphene superlattice is discussed. The amplitude and the width of the electromagnetic pulse are calculated. The drag current induced by such wave across the superlattice axis is investigated. The numerical estimate of the charge dragged by the solitary wave is made.

  19. Structural and optical properties of GaN thin films grown on Al2O3 substrates by MOCVD at different reactor pressures

    International Nuclear Information System (INIS)

    Guillén-Cervantes, A.; Rivera-Álvarez, Z.; López-López, M.; Ponce-Pedraza, A.; Guarneros, C.; Sánchez-Reséndiz, V.M.

    2011-01-01

    GaN thin films grown by MOCVD on (0 0 0 1) Al 2 O 3 substrates at different growth pressures were characterized by field-emission scanning electron microscopy, atomic force microscopy, micro-Raman, and photoluminescence at room temperature. It was found that there is an optimum pressure of 76 Torr at which the structural and optical properties of the GaN samples are superior. On the other hand samples grown at higher pressure exhibited hexagonal surface pits and surface spirals. The results showed that the growth pressure strongly influences the morphology, and significantly affects the structural and optical properties of the GaN epilayers.

  20. Trends in (LaMnO3)n/(SrTiO3)m superlattices with varying layer thicknesses

    KAUST Repository

    Jilili, J.; Cossu, Fabrizio; Schwingenschlö gl, Udo

    2015-01-01

    We investigate the thickness dependence of the structural, electronic, and magnetic properties of (LaMnO3)n/(SrTiO3)m (n, m = 2, 4, 6, 8) superlattices using density functional theory. The electronic structure turns out to be highly sensitive

  1. Characterization of InP/GaAs/Si structures grown by atmospheric pressure metalorganic chemical vapor deposition

    International Nuclear Information System (INIS)

    Pearton, S.J.; Short, K.T.; Macrander, A.T.; Abernathy, C.R.; Mazzi, V.P.; Haegel, N.M.; Al-Jassim, M.M.; Vernon, S.M.; Haven, V.E.

    1989-01-01

    The thickness dependence of material quality of InP-GaAs-Si structures grown by atmospheric pressure metalorganic chemical vapor deposition was investigated. The InP thickness was varied from 1--4 μm, and that of the GaAs from 0.1--4 μm. For a given thickness of InP, its ion channeling yield and x-ray peak width were essentially independent of the GaAs layer thickness. The InP x-ray peak widths were typically 400--440 arcsec for 4-μm-thick layers grown on GaAs. The GaAs x-ray widths in turn varied from 320--1000 arcsec for layer thicknesses from 0.1--4 μm. Cross-sectional transmission electron microscopy showed high defect densities at both the InP-GaAs and GaAs-Si interfaces. In 4-μm-thick InP layers the average threading dislocation density was in the range (3--8) x 10 8 cm -2 with a stacking fault density within the range (0.4--2) x 10 8 cm 2 . The He + ion channeling yield near the InP surface was similar to that of bulk InP (chi/sub min/∼4%), but rose rapidly toward the InP-GaAs heterointerface where it was typically around 50% for 1-μm-thick InP layers. All samples showed room-temperature luminescence, while at 4.4 K, exciton-related transitions, whose intensity was a function of the InP thickness, were observed

  2. Structural Modifications of Fructans in Aloe barbadensis Miller (Aloe Vera) Grown under Water Stress.

    Science.gov (United States)

    Salinas, Carlos; Handford, Michael; Pauly, Markus; Dupree, Paul; Cardemil, Liliana

    2016-01-01

    Aloe barbadensis Miller (Aloe vera) has a Crassulaceae acid metabolism which grants the plant great tolerance to water restrictions. Carbohydrates such as acemannans and fructans are among the molecules responsible for tolerating water deficit in other plant species. Nevertheless, fructans, which are prebiotic compounds, have not been described nor studied in Aloe vera, whose leaf gel is known to possess beneficial pharmaceutical, nutritional and cosmetic properties. As Aloe vera is frequently cultivated in semi-arid conditions, like those found in northern Chile, we investigated the effect of water deficit on fructan composition and structure. For this, plants were subjected to different irrigation regimes of 100%, 75%, 50% and 25% field capacity (FC). There was a significant increase in the total sugars, soluble sugars and oligo and polyfructans in plants subjected to water deficit, compared to the control condition (100% FC) in both leaf tips and bases. The amounts of fructans were also greater in the bases compared to the leaf tips in all water treatments. Fructans also increase in degree of polymerization with increasing water deficit. Glycosidic linkage analyses by GC-MS, led to the conclusion that there are structural differences between the fructans present in the leaves of control plants with respect to plants irrigated with 50% and 25% FC. Therefore, in non-stressed plants, the inulin, neo-inulin and neo-levan type of fructans predominate, while in the most stressful conditions for the plant, Aloe vera also synthesizes fructans with a more branched structure, the neofructans. To our knowledge, the synthesis and the protective role of neo-fructans under extreme water deficit has not been previously reported.

  3. Effects of tellurium concentration on the structure of melt-grown ZnSe crystals

    International Nuclear Information System (INIS)

    Atroshchenko, Lyubov V.; Galkin, Sergey N.; Rybalka, Irina A.; Voronkin, Evgeniy F.; Lalayants, Alexandr I.; Ryzhikov, Vladimir D.; Fedorov, Alexandr G.

    2005-01-01

    It has been shown that isovalent doping by tellurium positively affects the structural perfection of ZnSe crystals related to the completeness of the wurtzite-sphalerite phase transition. The optimum concentration range of tellurium in ZnSe crystals is 0.3-0.6 mass %. X-ray diffraction studies have shown that in ZnSe 1-x Te x crystals at tellurium concentrations below 0.3 mass % twinning and packing defects occur, while tellurium concentrations above 0.6 mass % lead to formation of tetragonal crystal lattice

  4. Dynamic localization in finite quantum dot superlattices

    International Nuclear Information System (INIS)

    Madureira, Justino R.; Schulz, Peter A.; Maialle, Marcelo Z.

    2004-01-01

    Full text: The dynamic properties of electrons and holes in low dimensional systems, driven by ac fields, reveal exciting emergent phenomena in the time span around the turn of the century. Such a rich scenario has been established by the concurrent development of powerful theoretical analysis tools, design and realization of high quality nano structured devices, as well as of tunable microwave and T Hz ac field sources. These striking developments made possible the exploration of the interaction of T Hz fields with condensed matter, leading even to biological tissue imaging. Therefore, a microscopic understanding of the T Hz field effects on designed nano structures constitute an important framework for further developments. A very interesting example in this context is the prediction of dynamic localization, which has been a subject of intense research in the past few years, from both theoretical and experimental point of views. The initial prediction states that, within a single band tight-binding approximation, an initially localized particle will return to its initial state following the periodical evolution of a driving pure sinusoidal field. This phenomenon can be simply visualized by the related collapse of the quasi energy mini bands, i.e., the localization of electronic states of a periodic unidimensional structure in real space driven by a field periodic in time. Such collapses occur whenever the field intensity/frequency ratio, eaF/(h/2π)ω, is a root of the zero-order Bessel function of the first kind. The quest for experimental signatures of dynamic localization is an involved task, since a variety of perturbations to an ideal situation is always present in real systems. The question that has to be answered is how the dynamic localization, related to the quasi-energy mini band collapses, may be identified in a context where concurring effects also tend to modify the quasi-energy spectra. For semiconductor superlattices, dynamic localization has been

  5. Structure and photoluminescence properties of ZnS films grown on porous Si substrates

    Science.gov (United States)

    Wang, Cai-feng; Hu, Bo; Yi, Hou-hui; Li, Wei-bing

    2011-11-01

    ZnS films were deposited on porous silicon (PS) substrates with different porosities. With the increase of PS substrate porosity, the XRD diffraction peak intensity decreases and the surface morphology of the ZnS films becomes rougher. Voids appear in the films, due to the increased roughness of PS structure. The photoluminescence (PL) spectra of the samples before and after deposition of ZnS were measured to study the effect of substrate porosity on the luminescence properties of ZnS/PS composites. As-prepared PS substrates emit strong red light. The red PL peak of PS after deposition of ZnS shows an obvious blueshift. As PS substrate porosity increases, the trend of blueshift increases. A green emission at about 550 nm was also observed when the porosity of PS increased, which is ascribed to the defect-center luminescence of ZnS. The effect of annealing time on the structural and luminescence properties of ZnS/PS composites were also studied. With the increase of annealing time, the XRD diffraction peak intensity and the self-activated luminescence intensity of ZnS increase, and, the surface morphology of the ZnS films becomes smooth and compact. However, the red emission intensity of PS decreases, which was associated with a redshift. White light emission was obtained by combining the luminescence of ZnS with the luminescence of PS.

  6. Anisotropic behavior of quantum transport in graphene superlattices

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Cummings, Aron W.; Roche, Stephan

    2014-01-01

    We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multi......We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength...

  7. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  8. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    International Nuclear Information System (INIS)

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-01-01

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process

  9. Structural change upon annealing of amorphous GeSbTe grown on Si(111)

    Energy Technology Data Exchange (ETDEWEB)

    Bragaglia, V., E-mail: bragaglia@pdi-berlin.de; Jenichen, B.; Giussani, A.; Perumal, K.; Riechert, H.; Calarco, R. [Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

    2014-08-07

    The structural change upon annealing of an amorphous GeSbTe (GST) film deposited by molecular beam epitaxy on a Si(111) substrate is studied by means of X-ray diffraction (XRD), X-ray reflectivity (XRR), and atomic force microscopy (AFM). XRD profiles reveal that both metastable cubic and stable hexagonal phases are obtained with a single out-of-plane orientation. XRR study shows a density increase and consequent thickness decrease upon annealing, in accordance with literature. From both, the XRD and the AFM study, it emerges that the crystalline substrate acts as a template for the film, favoring the crystallization of the amorphous GST into the [111] oriented metastable cubic phase, and the latter turns into the [0001] stable hexagonal phase for higher annealing temperature.

  10. Properties of Inconel 625 mesh structures grown by electron beam additive manufacturing

    International Nuclear Information System (INIS)

    List, F.A.; Dehoff, R.R.; Lowe, L.E.; Sames, W.J.

    2014-01-01

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology

  11. Diamond-like carbon layers grown by electrochemical method-structural study

    International Nuclear Information System (INIS)

    Kulesza, S.; Szatkowski, J.; Lulinska, E.; Kozanecki, M.

    2008-01-01

    A simple method of production of diamond-like carbon (DLC) thin films on various substrates by means of electrolysis of liquid hydrocarbons under ambient conditions is described in the paper. The amount of sp 3 -hybridized carbon clusters within deposited films is a key parameter of their structural quality, and is investigated using scanning electron microscopy (SEM), and Raman spectroscopy. Obtained results indicate that although the electrolysis generally leads to granular DLC films contaminated with graphitic inclusions, providing current density larger than 520 mA cm -2 at 1700 V, sp 3 -rich microcrystals with sharp edges can be found as well. Micro-Raman spectroscopic data strongly suggest that these microcrystals are minute diamonds, which eventually opens up a new perspective for a low-temperature synthesis of diamond-related materials

  12. Thermoelectric energy conversion in layered structures with strained Ge quantum dots grown on Si surfaces

    Science.gov (United States)

    Korotchenkov, Oleg; Nadtochiy, Andriy; Kuryliuk, Vasyl; Wang, Chin-Chi; Li, Pei-Wen; Cantarero, Andres

    2014-03-01

    The efficiency of the energy conversion devices depends in many ways on the materials used and various emerging cost-effective nanomaterials have promised huge potentials in highly efficient energy conversion. Here we show that thermoelectric voltage can be enhanced by a factor of 3 using layer-cake growth of Ge quantum dots through thermal oxidation of SiGe layers stacked in SiO2/Si3N4 multilayer structure. The key to achieving this behavior has been to strain the Ge/Si interface by Ge dots migrating to Si substrate. Calculations taking into account the carrier trapping in the dot with a quantum transmission into the neighboring dot show satisfactory agreement with experiments above ≈200 K. The results may be of interest for improving the functionality of thermoelectric devices based on Ge/Si.

  13. Properties of Inconel 625 mesh structures grown by electron beam additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    List, F.A., E-mail: listfaiii@ornl.gov [Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, TN (United States); Dehoff, R.R.; Lowe, L.E. [Oak Ridge National Laboratory, 1 Bethel Valley Rd., Oak Ridge, TN (United States); Sames, W.J. [Texas A and M University, College Station, TX (United States)

    2014-10-06

    Relationships between electron beam parameters (beam current, beam speed, and beam focus) and physical properties (mass, diameter, elastic modulus, and yield strength) have been investigated for Inconel 625 mesh cubes fabricated using an additive manufacturing technology based on electron beam melting. The elastic modulus and yield strength of the mesh cubes have been systematically varied by approximately a factor of ten by changing the electron beam parameters. Simple models have been used to understand these relationships. Structural anisotropies of the mesh associated with the layered build architecture have been observed and may contribute, along with microstructural anisotropies, to the anisotropic mechanical properties of the mesh. Knowledge of this kind is likely applicable to other metal and alloy systems and is essential to rapidly realize the full potential of this burgeoning technology.

  14. Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts

    Directory of Open Access Journals (Sweden)

    Jin-Seok Lee

    2012-01-01

    Full Text Available In order to obtain optimum growth conditions for desired thickness and more effective silicon feedstock usage, effects of processing parameters such as preheated substrate temperatures, time intervals, moving velocity of substrates, and Ar gas blowing rates on silicon ribbon thickness were investigated in the horizontal growth process. Most of the parameters strongly affected in the control of ribbon thickness with columnar grain structure depended on the solidification rate. The thickness of the silicon ribbon decreased with an increasing substrate temperature, decreasing time interval, and increasing moving velocity of the substrate. However, the blowing of Ar gas onto a liquid layer existing on the surface of solidified ribbon contributed to achieving smooth surface roughness but did not closely affect the change of ribbon thickness in the case of a blowing rate of ≥0.65 Nm3/h because the thickness of the solidified layer was already determined by the exit height of the reservoir.

  15. Effects of field-grown genetically modified Zoysia grass on bacterial community structure.

    Science.gov (United States)

    Lee, Yong-Eok; Yang, Sang-Hwan; Bae, Tae-Woong; Kang, Hong-Gyu; Lim, Pyung-Ok; Lee, Hyo-Yeon

    2011-04-01

    Herbicide-tolerant Zoysia grass has been previously developed through Agrobacterium-mediated transformation. We investigated the effects of genetically modified (GM) Zoysia grass and the associated herbicide application on bacterial community structure by using culture-independent approaches. To assess the possible horizontal gene transfer (HGT) of transgenic DNA to soil microorganisms, total soil DNAs were amplified by PCR with two primer sets for the bar and hpt genes, which were introduced into the GM Zoysia grass by a callus-type transformation. The transgenic genes were not detected from the total genomic DNAs extracted from 1.5 g of each rhizosphere soils of GM and non-GM Zoysia grasses. The structures and diversities of the bacterial communities in rhizosphere soils of GM and non-GM Zoysia grasses were investigated by constructing 16S rDNA clone libraries. Classifier, provided in the RDP II, assigned 100 clones in the 16S rRNA gene sequences library into 11 bacterial phyla. The most abundant phyla in both clone libraries were Acidobacteria and Proteobacteria. The bacterial diversity of the GM clone library was lower than that of the non- GM library. The former contained four phyla, whereas the latter had seven phyla. Phylogenetic trees were constructed to confirm these results. Phylogenetic analyses of the two clone libraries revealed considerable difference from each other. The significance of difference between clone libraries was examined with LIBSHUFF statistics. LIBSHUFF analysis revealed that the two clone libraries differed significantly (P〈0.025), suggesting alterations in the composition of the microbial community associated with GM Zoysia grass.

  16. Structure and magnetic properties of flux grown single crystals of Co3-xFexSn2S2 shandites

    Science.gov (United States)

    Kassem, Mohamed A.; Tabata, Yoshikazu; Waki, Takeshi; Nakamura, Hiroyuki

    2016-01-01

    We report a successful single crystal growth of the shandite-type half-metallic ferromagnet Co3Sn2S2, and its Fe-substituted compounds, Co3-xFexSn2S2, by employing the flux method. Although Fe3Sn2S2 is unstable phase, we found that using the self Sn flux enables us to obtain single phase crystals up to x=0.53. The chemical composition of the grown plate-shaped single crystals was examined using wavelength-dispersive X-ray spectroscopy. The shandite structure with R 3 ̅m symmetry was confirmed by powder X-ray diffraction and the crystal structure parameters were refined using the Rietveld method. Magnetization measurements show suppression of the ferromagnetic order upon Fe-substitution , as well as in other substituted systems such as In- and Ni-substituted Co3Sn2S2. The almost identical magnetic phase diagrams of the Fe- and In-substituted compounds indicate that the electron number is dominantly significant to the magnetism in the Co-based shandite.

  17. Optical and structural properties of CuSbS2 thin films grown by thermal evaporation method

    International Nuclear Information System (INIS)

    Rabhi, A.; Kanzari, M.; Rezig, B.

    2009-01-01

    Structural, optical and electrical properties of CuSbS 2 thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The CuSbS 2 thin films were carried out at substrate temperatures in the temperature range 100-200 deg. C . The structure and composition were characterized by XRD, SEM and EDX. X-ray diffraction revealed that the films are (111) oriented upon substrate temperature 170 deg. C and amorphous for the substrate temperatures below 170 deg. C . No secondary phases are observed for all the films. The optical absorption coefficients and band gaps of the films were estimated by optical transmission and reflection measurements at room temperature. Strong absorption coefficients in the range 10 5 -10 6 cm -1 at 500 nm were found. The direct gaps Eg lie between 0.91-1.89 eV range. It is observed that there is a decrease in optical band gap Eg with increasing the substrate temperature. Resistivity of 0.03-0.96 Ω cm, in dependence on substrate temperature was characterized. The all unheated films exhibit p-type conductivity. The characteristics reported here also offer perspective for CuSbS 2 as an absorber material in solar cells applications

  18. Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

    International Nuclear Information System (INIS)

    Pecz, B.; El-Shaer, A.; Bakin, A.; Mofor, A.-C.; Waag, A.; Stoemenos, J.

    2006-01-01

    The structural characteristics of the ZnO film grown on sapphire substrate using a thin MgO buffer layer were studied using transmission electron microscopy and high-resolution x-ray diffraction. The growth was carried out in a modified plasma-molecular beam epitaxy system. The observed misfit dislocations were well confined at the sapphire overgrown interface exhibiting domain matching epitaxy, where the integral multiples of lattice constants match across the interface. The main extended defects in the ZnO film were the threading dislocations having a mean density of 4x10 9 cm -2 . The formation of the MgO buffer layer as well as the ZnO growth were monitored in situ by reflection high-energy electron diffraction. The very thin ∼1 nm, MgO buffer layer can partially interdiffuse with the ZnO as well as react with the Al 2 O 3 substrate forming an intermediate epitaxial layer having the spinel (MgO/Al 2 O 3 ) structure

  19. Structural and elastoplastic properties of β -Ga2O3 films grown on hybrid SiC/Si substrates

    Science.gov (United States)

    Osipov, A. V.; Grashchenko, A. S.; Kukushkin, S. A.; Nikolaev, V. I.; Osipova, E. V.; Pechnikov, A. I.; Soshnikov, I. P.

    2018-04-01

    Structural and mechanical properties of gallium oxide films grown on (001), (011) and (111) silicon substrates with a buffer layer of silicon carbide are studied. The buffer layer was fabricated by the atom substitution method, i.e., one silicon atom per unit cell in the substrate was substituted by a carbon atom by chemical reaction with carbon monoxide. The surface and bulk structure properties of gallium oxide films have been studied by atomic-force microscopy and scanning electron microscopy. The nanoindentation method was used to investigate the elastoplastic characteristics of gallium oxide, and also to determine the elastic recovery parameter of the films under study. The ultimate tensile strength, hardness, elastic stiffness constants, elastic compliance constants, Young's modulus, linear compressibility, shear modulus, Poisson's ratio and other characteristics of gallium oxide have been calculated by quantum chemistry methods based on the PBESOL functional. It is shown that all these properties of gallium oxide are essentially anisotropic. The calculated values are compared with experimental data. We conclude that a change in the silicon orientation leads to a significant reorientation of gallium oxide.

  20. Structural analysis of Gossypium hirsutum fibers grown under greenhouse and hydroponic conditions.

    Science.gov (United States)

    Natalio, Filipe; Tahir, Muhammad Nawaz; Friedrich, Norman; Köck, Margret; Fritz-Popovski, Gerhard; Paris, Oskar; Paschke, Reinhard

    2016-06-01

    Cotton is the one of the world's most important crops. Like any other crop, cotton growth/development and fiber quality is highly dependent on environmental factors. Increasing global weather instability has been negatively impacting its economy. Cotton is a crop that exerts an intensive pressure over natural resources (land and water) and demands an overuse of pesticides. Thus, the search for alternative cotton culture methods that are pesticide-free (biocotton) and enable customized standard fiber quality should be encouraged. Here we describe a culture of Gossypium hirsutum ("Upland" Cotton) utilizing a greenhouse and hydroponics in which the fibers are morphological similar to conventional cultures and structurally fit into the classical two-phase cellulose I model with 4.19nm crystalline domains surrounded by amorphous regions. These fibers exhibit a single crystalline form of cellulose I-Iß, monoclinic unit cell. Fiber quality bulk analysis shows an improved length, strength, whiteness when compared with soil-based cultures. Finally, we show that our fibers can be spun, used for production of non-woven fabrics and indigo-vat stained demonstrating its potential in industrial and commercial applications. Copyright © 2016 Elsevier Inc. All rights reserved.

  1. Structural, electronic and photovoltaic characterization of multiwalled carbon nanotubes grown directly on stainless steel

    Directory of Open Access Journals (Sweden)

    Luca Camilli

    2012-05-01

    Full Text Available We have taken advantage of the native surface roughness and the iron content of AISI-316 stainless steel to grow multiwalled carbon nanotubes (MWCNTs by chemical vapour deposition without the addition of an external catalyst. The structural and electronic properties of the synthesized carbon nanostructures have been investigated by a range of electron microscopy and spectroscopy techniques. The results show the good quality and the high graphitization degree of the synthesized MWCNTs. Through energy-loss spectroscopy we found that the electronic properties of these nanostructures are markedly different from those of highly oriented pyrolytic graphite (HOPG. Notably, a broadening of the π-plasmon peak in the case of MWCNTs is evident. In addition, a photocurrent was measured when MWCNTs were airbrushed onto a silicon substrate. External quantum efficiency (EQE and photocurrent values were reported both in planar and in top-down geometry of the device. Marked differences in the line shapes and intensities were found for the two configurations, suggesting that two different mechanisms of photocurrent generation and charge collection are in operation. From this comparison, we are able to conclude that the silicon substrate plays an important role in the production of electron–hole pairs.

  2. The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. [and others

    1997-06-01

    We describe the metal-organic chemical vapor deposition growth of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500{degrees}C, and 200 torr in a horizontal quartz reactor using TMIn, TESb, AsH{sub 3},and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 4.4 {mu}m. Excellent performance was observed for an SLS LED and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 {mu}m with a maximum operating temperature of 240 K and a characteristic temperature of 33 K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 {mu}m with 80 {mu}W of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 gm at 120 K.

  3. Superlattices: problems and new opportunities, nanosolids

    Directory of Open Access Journals (Sweden)

    Tsu Raphael

    2011-01-01

    Full Text Available Abstract Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids.

  4. Synchrotron spectroscopy of confined carriers in CdF{sub 2}-CaF{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ivanovskikh, K. V. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Institute of Physics and Technology, Ural Federal University, Ekaterinburg 620002 (Russian Federation); Hughes-Currie, R. B. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Reid, M. F.; Reeves, R. J. [MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. Box 600, Wellington 6140 (New Zealand); Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Wells, J.-P. R., E-mail: jon-paul.wells@canterbury.ac.nz [Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Sokolov, N. S. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2016-03-14

    Luminescence spectroscopic and temporal dynamic properties of high energy elementary excitations in CdF{sub 2}-CaF{sub 2} superlattices have been studied utilising excitation with vacuum ultraviolet and X-ray synchrotron radiation while comparing the results with those obtained for CdF{sub 2} and CaF{sub 2} bulk crystals. It is shown that the optical properties of the superlattice structures are determined by exciton emission in the CdF{sub 2} monolayers. The experimental manifestations of exciton confinement phenomena are discussed.

  5. Superlattices of platinum and palladium nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

    2000-04-06

    The authors have used a nonionic inverse micelle synthesis technique to form nanoclusters of platinum and palladium. These nanoclusters can be rendered hydrophobic or hydrophilic by the appropriate choice of capping ligand. Unlike Au nanoclusters, Pt nanoclusters show great stability with thiol ligands in aqueous media. Alkane thiols, with alkane chains ranging from C{sub 6} to C{sub 18} were used as hydrophobic ligands, and with some of these they were able to form 2-D and/or 3-D superlattices of Pt nanoclusters as small as 2.7 nm in diameter. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function of the particle centers, from which they can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the gaps between particles within superlattice domains increases, but more slowly than one might expect, possibly indicating thiol chain interdigitation.

  6. Electron dynamics in intentionally disordered semiconductor superlattices

    International Nuclear Information System (INIS)

    Diez, E.; Sanchez, A.; Dominguez-Adame, F.; Berman, G.P.

    1996-01-01

    We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domacute inguez-Adame et al.[Phys. Rev. B 51, 14359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. copyright 1996 The American Physical Society

  7. Structural and nanomechanical properties of InN films grown on Si(1 0 0) by femtosecond pulsed laser deposition

    International Nuclear Information System (INIS)

    Hafez, M A; Mamun, M A; Elmustafa, A A; Elsayed-Ali, H E

    2013-01-01

    The structural and nanomechanical properties of InN films grown on Si(1 0 0) using femtosecond pulsed laser deposition were studied for different growth conditions. Atomic nitrogen was generated by either thermal cracking or laser-induced breakdown (LIB) of ammonia. Optical emission spectroscopy was conducted on the laser plasma and used to observe atomic nitrogen formation. An indium buffer layer was initially grown on the Si substrate at low temperature. The surface structure and morphology were investigated by in situ reflection high-energy electron diffraction, ex situ atomic force microscopy and x-ray diffraction (XRD). The results show that the initial buffer indium layers were terminated with the In(2 × 1) structure and had a smooth surface. With increased coverage, the growth mode developed from two-dimensional layers to three-dimensional islands. At room temperature (RT), formation of submicrometre islands resulted in mixed crystal structure of In and InN. As the substrate temperature was increased to 250–350 °C, the crystal structure was found to be dominated by fewer In and more InN, with only InN formed at 350 °C. The XRD patterns show that the grown InN films have wurtzite crystal structure. The film hardness near the surface was observed to increase from less than 1 GPa, characteristic of In for the sample grown at RT using the thermal cracker, to a hardness of 11 GPa at 30 nm from surface, characteristic of InN for samples grown at 350 °C by LIB. The hardness at deep indents reaches the hardness of the Si substrate of ∼12 GPa. (paper)

  8. Studies on surface structures and etch patterns on habit faces of gel-grown crystals of iodates of barium, strontium, and calcium

    International Nuclear Information System (INIS)

    Joshi, M.S.; Trivedi, S.G.

    1986-01-01

    Microtopographical studies on habit faces of gel grown crystals (of different habits) of iodates of Ba, Sr, and Ca are illustrated and described. Etch patterns on these faces are illustrated and correlated to the observed growth patterns on the respective faces. Growth mechanism of the crystals is explained in light of the observed surface structures and etch pits suitably produced. (author)

  9. Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate

    NARCIS (Netherlands)

    Keizer, J.G.; Jo, M.; Mano, T.; Noda, T.; Sakoda, K.; Koenraad, P.M.

    2011-01-01

    We report the structural analysis at the atomic scale of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A-oriented substrate. The shape, interfaces, and composition of these nanostructures and their surrounding matrix are investigated. We show that quantum wires can be

  10. The atomic structure of the Si(111)-Pb buried interface grown on the Si(111)-(#sq root#3 x #sq root#3)-Pb reconstruction

    DEFF Research Database (Denmark)

    Howes, P.B.; Edwards, K.A.; Macdonald, J.E.

    1998-01-01

    that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate Si(111)-(root 3 x root 3)-R30 degrees-Pb reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between...

  11. Thermoelectric properties of IV–VI-based heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pabloborges@ufv.br [Instituto de Ciências Exatas e Tec., Universidade Federal de Viçosa, Rio Paranaíba, MG (Brazil); Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Petersen, J.E.; Scolfaro, L. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States); Leite Alves, H.W. [Departamento de Ciências Naturais, Universidade Federal de São João Del Rei, Caixa Postal 110, São João Del Rei 36300-000, MG (Brazil); Myers, T.H. [Department of Physics, Texas State University, San Marcos, TX 78666 (United States)

    2015-07-15

    Doping in a manner that introduces anisotropy in order to reduce thermal conductivity is a significant focus in thermoelectric research today. By solving the semiclassical Boltzmann transport equations in the constant scattering time (τ) approximation, in conjunction with ab initio electronic structure calculations, within Density Functional Theory, we compare the Seebeck coefficient (S) and figure of merit (ZT) of bulk PbTe to PbTe/SnTe/PbTe heterostructures and PbTe doping superlattices (SLs) with periodically doped planes. Bismuth and Thallium were used as the n- and p-type impurities, respectively. The effects of carrier concentration are considered via chemical potential variation in a rigid band approximation. The impurity bands near the Fermi level in the electronic structure of PbTe SLs are of Tl s- and Bi p-character, and this feature is independent of the doping concentration or the distance between impurity planes. We observe the impurity bands to have a metallic nature in the directions perpendicular to the doping planes, yet no improvement on the values of ZT is found when compared to bulk PbTe. For the PbTe/SnTe/PbTe heterostructures, the calculated S presents good agreement with recent experimental data, and an anisotropic behavior is observed for low carrier concentrations (n<10{sup 18} cm{sup −3}). A large value of ZT{sub ||} (parallel to the growth direction) of 3.0 is predicted for n=4.7×10{sup 18} cm{sup −3} and T=700 K, whereas ZT{sub p} (perpendicular to the growth direction) is found to peak at 1.5 for n=1.7×10{sup 17} cm{sup −3}. Both electrical conductivity enhancement and thermal conductivity reduction are analyzed. - Graphical abstract: Figure of merit for PbTe/SnTe/PbTe heterostructure along the [0 0 1] direction, P.D. Borges, J.E. Petersen, L. Scolfaro, H.W. Leite Alves, T.H. Myers, Improved thermoelectric properties of IV–VI-based heterostructures and superlattices. - Highlights: • Thermoelectric properties of IV

  12. Electronic structure, morphology and emission polarization of enhanced symmetry InAs quantum-dot-like structures grown on InP substrates by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Maryński, A.; Sĕk, G.; Musiał, A.; Andrzejewski, J.; Misiewicz, J. [Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław (Poland); Gilfert, C.; Reithmaier, J. P. [Technische Physik, Institute of Nanostructure Technology and Analytics, CINSaT, University of Kassel, Heinrich Plett-Str. 40, D-34132 Kassel (Germany); Capua, A.; Karni, O.; Gready, D.; Eisenstein, G. [Department of Electrical Engineering, Technion, Haifa 32000 (Israel); Atiya, G.; Kaplan, W. D. [Department of Materials Science and Engineering, Technion, Haifa 32000 (Israel); Kölling, S. [Fraunhofer Institute for Photonic Microsystems, Center for Nanoelectronic Technologies, Königsbrücker Straße 180, D-01099 Dresden (Germany)

    2013-09-07

    The optical and structural properties of a new kind of InAs/InGaAlAs/InP quantum dot (QD)-like objects grown by molecular beam epitaxy have been investigated. These nanostructures were found to have significantly more symmetrical shapes compared to the commonly obtained dash-like geometries typical of this material system. The enhanced symmetry has been achieved due to the use of an As{sub 2} source and the consequent shorter migration length of the indium atoms. Structural studies based on a combination of scanning transmission electron microscopy (STEM) and atom probe tomography (APT) provided detailed information on both the structure and composition distribution within an individual nanostructure. However, it was not possible to determine the lateral aspect ratio from STEM or APT. To verify the in-plane geometry, electronic structure calculations, including the energy levels and transition oscillator strength for the QDs have been performed using an eight-band k·p model and realistic system parameters. The results of calculations were compared to measured polarization-resolved photoluminescence data. On the basis of measured degree of linear polarization of the surface emission, the in-plane shape of the QDs has been assessed proving a substantial increase in lateral symmetry. This results in quantum-dot rather than quantum-dash like properties, consistent with expectations based on the growth conditions and the structural data.

  13. Coherent light from E-field induced quantum coupling of exciton states in superlattice-like quantum wells

    DEFF Research Database (Denmark)

    Lyssenko, V. G.; Østergaard, John Erland; Hvam, Jørn Märcher

    1999-01-01

    Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we investig......Summary form only given. We focus on the ability to control the electronic coupling in coupled quantum wells with external E-fields leading to a strong modification of the coherent light emission, in particular at a bias where a superlattice-like miniband is formed. More specifically, we...... investigate a MBE-grown GaAs sample with a sequence of 15 single quantum wells having a successive increase of 1 monolayer in width ranging from 62 A to 102 A and with AlGaAs barriers of 17 Å....

  14. Raman Scattering and Surface Photovoltage Spectroscopy Studies of InGaAs/GaAs Radial Superlattices

    Science.gov (United States)

    Angelova, T.; Cros, A.; Ivanov, Ts.; Donchev, V.; Cantarero, A.; Shtinkov, N.; Deneke, Ch.; Schmidt, O. G.

    2011-12-01

    In this work we get insight into the multilayer structure of rolled-up microtube radial superlattices (RSLs) by the study of the optical and folded acoustic phonon modes of individual microtubes. Raman results show shifts of the InGaAs and GaAs related longitudinal optical modes that can be related to the strain state of the tubes. The folding of the acoustic modes has been related with the periodicity of the artificial superlattice formed by the multiple turns of the heterostructures. Information on the electronic structure and optical transitions of RSLs has been obtained by surface photovoltage spectroscopy. Room temperature spectra reveal several electronic transitions with energies below 1.3 eV. These transitions have been identified as originating from defect levels at the interfaces, as well as from the RSLs and the In0.215Ga0.785As/GaAs quantum well in the unfolded regions of the sample.

  15. Effects of Various Parameters on Structural and Optical Properties of CBD-Grown ZnS Thin Films: A Review

    Science.gov (United States)

    Sinha, Tarkeshwar; Lilhare, Devjyoti; Khare, Ayush

    2018-02-01

    Zinc sulfide (ZnS) thin films deposited by chemical bath deposition (CBD) technique have proved their capability in a wide area of applications including electroluminescent and display devices, solar cells, sensors, and field emitters. These semiconducting thin films have attracted a much attention from the scientific community for industrial and research purposes. In this article, we provide a comprehensive review on the effect of various parameters on various properties of CBD-grown ZnS films. In the first part, we discuss the historical background of ZnS, its basic properties, and the advantages of the CBD technique. Detailed discussions on the film growth, structural and optical properties of ZnS thin films affected by various parameters, such as bath temperature and concentration, deposition time, stirring speed, complexing agents, pH value, humidity in the environment, and annealing conditions, are also presented. In later sections, brief information about the recent studies and findings is also added to explore the scope of research work in this field.

  16. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    Energy Technology Data Exchange (ETDEWEB)

    Sokolov, N. S., E-mail: nsokolov@fl.ioffe.ru; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V. [Ioffe Physical-Technical Institute of Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation); Maksimova, K. Yu.; Grunin, A. I. [Immanuel Kant Baltic Federal University, Kaliningrad 236041 (Russian Federation); Tabuchi, M. [Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603 (Japan)

    2016-01-14

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y{sub 3}Fe{sub 5}O{sub 12} (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films.

  17. The Pine-Needle-Inspired Structure of Zinc Oxide Nanorods Grown on Electrospun Nanofibers for High-Performance Flexible Supercapacitors.

    Science.gov (United States)

    Sami, Syed Kamran; Siddiqui, Saqib; Shrivastava, Sajal; Lee, Nae-Eung; Chung, Chan-Hwa

    2017-12-01

    Flexible supercapacitors with high electrochemical performance and stability along with mechanical robustness have gained immense attraction due to the substantial advancements and rampant requirements of storage devices. To meet the exponentially growing demand of microsized energy storage device, a cost-effective and durable supercapacitor is mandatory to realize their practical applications. Here, in this work, the fabrication route of novel electrode materials with high flexibility and charge-storage capability is reported using the hybrid structure of 1D zinc oxide (ZnO) nanorods and conductive polyvinylidene fluoride-tetrafluoroethylene (P(VDF-TrFE)) electrospun nanofibers. The ZnO nanorods are conformably grown on conductive P(VDF-TrFE) nanofibers to fabricate the light-weighted porous electrodes for supercapacitors. The conductive nanofibers acts as a high surface area scaffold with significant electrochemical performance, while the addition of ZnO nanorods further enhances the specific capacitance by 59%. The symmetric cell with the fabricated electrodes presents high areal capacitance of 1.22 mF cm -2 at a current density of 0.1 mA cm -2 with a power density of more than 1600 W kg -1 . Furthermore, these electrodes show outstanding flexibility and high stability with 96% and 78% retention in specific capacitance after 1000 and 5000 cycles, respectively. The notable mechanical durability and robustness of the cell acquire both good flexibility and high performance. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Thin yttrium iron garnet films grown by pulsed laser deposition: Crystal structure, static, and dynamic magnetic properties

    International Nuclear Information System (INIS)

    Sokolov, N. S.; Fedorov, V. V.; Korovin, A. M.; Suturin, S. M.; Baranov, D. A.; Gastev, S. V.; Krichevtsov, B. B.; Bursian, V. E.; Lutsev, L. V.; Maksimova, K. Yu.; Grunin, A. I.; Tabuchi, M.

    2016-01-01

    Pulsed laser deposition has been used to grow thin (10–84 nm) epitaxial layers of Yttrium Iron Garnet Y 3 Fe 5 O 12 (YIG) on (111)–oriented Gadolinium Gallium Garnet substrates at different growth conditions. Atomic force microscopy showed flat surface morphology both on micrometer and nanometer scales. X-ray diffraction measurements revealed that the films are coherent with the substrate in the interface plane. The interplane distance in the [111] direction was found to be by 1.2% larger than expected for YIG stoichiometric pseudomorphic film indicating presence of rhombohedral distortion in this direction. Polar Kerr effect and ferromagnetic resonance measurements showed existence of additional magnetic anisotropy, which adds to the demagnetizing field to keep magnetization vector in the film plane. The origin of the magnetic anisotropy is related to the strain in YIG films observed by XRD. Magneto-optical Kerr effect measurements revealed important role of magnetization rotation during magnetization reversal. An unusual fine structure of microwave magnetic resonance spectra has been observed in the film grown at reduced (0.5 mTorr) oxygen pressure. Surface spin wave propagation has been demonstrated in the in-plane magnetized films

  19. Structural, Optical Constants and Photoluminescence of ZnO Thin Films Grown by Sol-Gel Spin Coating

    Directory of Open Access Journals (Sweden)

    Abdel-Sattar Gadallah

    2013-01-01

    Full Text Available We report manufacturing and characterization of low cost ZnO thin films grown on glass substrates by sol-gel spin coating method. For structural properties, X-ray diffraction measurements have been utilized for evaluating the dominant orientation of the thin films. For optical properties, reflectance and transmittance spectrophotometric measurements have been done in the spectral range from 350 nm to 2000 nm. The transmittance of the prepared thin films is 92.4% and 88.4%. Determination of the optical constants such as refractive index, absorption coefficient, and dielectric constant in this wavelength range has been evaluated. Further, normal dispersion of the refractive index has been analyzed in terms of single oscillator model of free carrier absorption to estimate the dispersion and oscillation energy. The lattice dielectric constant and the ratio of free carrier concentration to free carrier effective mass have been determined. Moreover, photoluminescence measurements of the thin films in the spectral range from 350 nm to 900 nm have been presented. Electrical measurements for resistivity evaluation of the films have been done. An analysis in terms of order-disorder of the material has been presented to provide more consistency in the results.

  20. Structural and optical properties of GaxIn1-xP layers grown by chemical beam epitaxy

    Science.gov (United States)

    Seong, Tae-Yeon; Yang, Jung-Ja; Ryu, Mee Yi; Song, Jong-In; Yu, Phil W.

    1998-05-01

    Chemical beam epitaxial (CBE) GaxIn1-xP layers (x≈0.5) grown on (001) GaAs substrates at temperatures ranging from 490 to 580°C have been investigated using transmission electron diffraction (TED), transmission electron microscopy, and photoluminescence (PL). TED examination revealed the presence of diffuse scattering 1/2{111}B positions, indicating the occurrence of typical CuPt-type ordering in the GaInP CBE layers. As the growth temperature decreased from 580 to 490°C, maxima in the intensity of the diffuse scattering moved from ½{111}B to ½{-1+δ,1-δ,0} positions, where δ is a positive value. As the growth temperature increased from 490 to 550°C, the maxima in the diffuse scattering intensity progressively approached positions of 1/2\\{bar 110\\} , i.e., the value of δ decreased from 0.25 to 0.17. Bandgap reduction (˜45 meV) was observed in the CBE GaInP layers and was attributed to the presence of ordered structures.

  1. N and Si Implantation Effect on Structural and Electrical Properties of Bridgman grown GaSe Single Crystal

    International Nuclear Information System (INIS)

    Karabulut, O.

    2004-01-01

    N and Si implantation to GaSe single crystals were carried out parallel to c-axis with ion beam of about 10 1 6 ions/cm 2 dose having energy values 30, 60 and 100 keV. Ion implantation modifications on Bridgman grown GaSe single crystals have been investigated by means of XRD, electrical conductivity, absorption and photoconductivity measurements. XRD measurements revealed that annealing results in a complete recovery of the crystalline nature that was moderately reduced upon implantation. It was observed that both N- and Siimplantation followed by annealing process decreased the resistivity values from 10 7 to 10 3 .-cm. The analysis of temperature dependent conductivity showed that at high temperature region above 200 K, the transport mechanism is dominated by thermal excitation in the doped and undoped GaSe samples. At lower temperatures, the conduction of carriers is dominated by variable range hopping mechanism in the implanted samples. Absorption and spectral photoconductivity measurements showed that the band edge is shifted in the implanted sample. All these modifications were attributed to the structural modifications and continuous shallow trap levels introduced upon implantation and annealing

  2. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    Energy Technology Data Exchange (ETDEWEB)

    Sanz-Hervas, A.; Aguilar, M. [Madrid, Univ. (Spain). Dept. Tecnologia Electronica. E.T.S.I. Telecomunicacion; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J. [Valladolid, Real de Burgos Univ. (Spain). Dept. Teoria de la Senal u Comunicaciones e Ingegneria Telematica. E.T.S.I. Telecomunicacion; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E. [Madrid, Univ. (Spain). Dept. Ingegnieria Electronica. E.T.S.I. Telecomunicacion

    1997-02-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224{+-} reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies.

  3. High-resolution X-ray diffraction characterisation of piezoelectric InGaAs / GaAs multiquantum wells and superlattices on (111)B GaAs

    International Nuclear Information System (INIS)

    Sanz-Hervas, A.; Aguilar, M.; Lopez, M.; Llorente, C.; Lorenzo, R.; Abril, E. J.; Sacedon, A.; Sanchez, J. L.; Calleja, E.; Munoz, E.

    1997-01-01

    In this paper the authors show some examples of strained InGaAs / GaAs multilayers on (111)B GaAs substrates studied by high-resolution X-ray diffractometry. The samples consisted of a multiquantum well or superlattice embedded in the intrinsic region of a p-i-n photodiode. They have analysed piezoelectric (111)B structures with 3, 7, 10, and 40 periods and different indium contents and compared the results with identical structures simultaneously grown on (001) substrates. The interpretation of the diffraction profiles has been carried out with a computer simulation model developed in our labs, which allows the calculation of symmetric and asymmetric reflections regardless of the substrate orientation or miscut angle. The agreement between the experimental scans and the theory was very satisfactory in all the samples, which has enabled us to determine the main structural parameters of the diodes, Asymmetric 224± reflections on (111)B structures have been simulated for the first time. They have also compared the structural parameters obtained by high-resolution X-ray diffractometry with the results deduced from photoluminescence and photocurrent spectroscopies

  4. Theoretical Study of the Transverse Dielectric Constant of Superlattices and Their Alloys. Ph.D Thesis

    Science.gov (United States)

    Kahen, K. B.

    1986-01-01

    The optical properties of III to V binary and ternary compounds and GaAs-Al(x)Ga(1-x)As superlattices are determined by calculating the real and imaginary parts of the transverse dielectric constant. Emphasis is given to determining the influence of different material and superlattice parameters on the values of the index of refraction and absorption coefficient. In order to calculate the optical properties of a material, it is necessary to compute its electronic band structure. This was accomplished by introducing a partition band structure approach based on a combination of the vector k x vector p and nonlocal pseudopotential techniques. The advantages of this approach are that it is accurate, computationally fast, analytical, and flexible. These last two properties enable incorporation of additional effects into the model, such as disorder scattering, which occurs for alloy materials and excitons. Furthermore, the model is easily extended to more complex structures, for example multiple quantum wells and superlattices. The results for the transverse dielectric constant and absorption coefficient of bulk III to V compounds compare well with other one-electron band structure models and the calculations show that for small frequencies, the index of refraction is determined mainly by the contibution of the outer regions of the Brillouin zone.

  5. Optical properties of metallic Fibonacci quasi-superlattice

    International Nuclear Information System (INIS)

    Feng Weiguo; Liu Nianhua; Wu Xiang

    1990-06-01

    Within the approximation of hydrodynamic model, the optical properties of the metallic Fibonacci quasi-superlattice have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the transfer-matrix method and taking account of damping effects, we have discussed the electromagnetic normal modes for the quasisuperlattice in the rational approximation. The related dispersion curves explain the reflection spectra well, and we found that similar to the reflectivities, both real part and imagine part of the dispersion relation pattern has a rich structure of self-similarity. With the increasing of the generation number, the electromagnetic modes all become critical. (author). 13 refs, 3 figs

  6. Sequential magnetic switching in Fe/MgO(001) superlattices

    Science.gov (United States)

    Magnus, F.; Warnatz, T.; Palsson, G. K.; Devishvili, A.; Ukleev, V.; Palisaitis, J.; Persson, P. O. Å.; Hjörvarsson, B.

    2018-05-01

    Polarized neutron reflectometry is used to determine the sequence of magnetic switching in interlayer exchange coupled Fe/MgO(001) superlattices in an applied magnetic field. For 19.6 Å thick MgO layers we obtain a 90∘ periodic magnetic alignment between adjacent Fe layers at remanence. In an increasing applied field the top layer switches first followed by its second-nearest neighbor. For 16.4 Å MgO layers, a 180∘ periodic alignment is obtained at remanence and with increasing applied field the layer switching starts from the two outermost layers and proceeds inwards. This sequential tuneable switching opens up the possibility of designing three-dimensional magnetic structures with a predefined discrete switching sequence.

  7. Transport properties of graphene under periodic and quasiperiodic magnetic superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Wei-Tao, E-mail: luweitao@lyu.edu.cn [School of Science, Linyi University, 276005 Linyi (China); Institute of Condensed Matter Physics, Linyi University, 276005 Linyi (China); Wang, Shun-Jin [Department of Physics, Sichuan University, 610064 Chengdu (China); Wang, Yong-Long; Jiang, Hua [School of Science, Linyi University, 276005 Linyi (China); Institute of Condensed Matter Physics, Linyi University, 276005 Linyi (China); Li, Wen [School of Science, Linyi University, 276005 Linyi (China)

    2013-08-15

    We study the transmission of Dirac electrons through the one-dimensional periodic, Fibonacci, and Thue–Morse magnetic superlattices (MS), which can be realized by two different magnetic blocks arranged in certain sequences in graphene. The numerical results show that the transmission as a function of incident energy presents regular resonance splitting effect in periodic MS due to the split energy spectrum. For the quasiperiodic MS with more layers, they exhibit rich transmission patterns. In particular, the transmission in Fibonacci MS presents scaling property and fragmented behavior with self-similarity, while the transmission in Thue–Morse MS presents more perfect resonant peaks which are related to the completely transparent states. Furthermore, these interesting properties are robust against the profile of MS, but dependent on the magnetic structure parameters and the transverse wave vector.

  8. Structural and magnetic properties of SmCo-based magnetic films grown by electron-beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Saravanan, P., E-mail: psdrdo@gmail.com [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Vinod, V.T.P.; Černík, Miroslav [Institute for Nanomaterials, Advanced Technologies and Innovation, Department of Natural Sciences, Technical University of Liberec, Studentská 1402/2, Liberec 1, 461 17 (Czech Republic); Vishnuraj, R.; Arout Chelvane, J.; Kamat, S.V. [Defence Metallurgical Research Laboratory, Hyderabad 500058 (India); Hsu, Jen-Hwa, E-mail: jhhsu@phys.ntu.edu.tw [Department of Physics, National Taiwan University, Taipei 106, Taiwan (China)

    2015-07-01

    Sub-micron thick Sm–Co films (200 and 300 nm) with selective phase composition are grown on Si (100) substrates by electron-beam evaporation using Sm-lean alloy targets such as Sm{sub 4}Co{sub 96} and Sm{sub 8}Co{sub 92}. The structural and magnetic properties of Sm–Co films are characterized by x-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and super-conducting quantum interference device (SQUID) magnetometer. The Sm–Co films obtained with the Sm{sub 4}Co{sub 96} target exhibit Sm{sub 2}Co{sub 17} as a prominent phase; while the films produced with the Sm{sub 8}Co{sub 92} target show Sm{sub 2}Co{sub 7} as a major phase. Both the Sm–Co films reveal granular morphology; however, the estimated grain size values are slightly lower in the case of Sm{sub 2}Co{sub 7} films, irrespective of their thicknesses. Coercivity (H{sub c}) values of 1.48 and 0.9 kOe are achieved for the as-grown 200-nm thick Sm{sub 2}Co{sub 17} and Sm{sub 2}Co{sub 7}-films. Temperature-dependent magnetization studies confirm that the demagnetization behaviors of these films are consistent with respect to the identified phase composition. Upon rapid thermal annealing, maximum H{sub c} value of 8.4 kOe is achieved for the 200 nm thick Sm{sub 2}Co{sub 17}-films. As far as e-beam evaporated Sm–Co films are concerned, this H{sub c} value is one of the best values reported so far. - Highlights: • Electron-beam evaporation was exploited to grow sub-μm thick Sm–Co films. • Sm{sub 2}Co{sub 7} and Sm{sub 2}Co{sub 17} magnetic phases were crystallized using Sm-lean alloy targets. • Both 200 and 300-nm thick Sm–Co films revealed distinct granular morphology. • Sm–Co films of lower thickness exhibited high H{sub c} and low M{sub s} and vice-versa. • Coercivity value of 8.4 kOe achieved for the 200-nm thick Sm{sub 2}Co{sub 17}-films after RTA.

  9. Evolution of Structural and Optical Properties of ZnO Nanorods Grown on Vacuum Annealed Seed Crystallites

    Directory of Open Access Journals (Sweden)

    Waqar Khan

    2018-01-01

    Full Text Available In this study, the ambient condition for the as-coated seed layer (SL annealing at 350 °C is varied from air or nitrogen to vacuum to examine the evolution of structural and optical properties of ZnO nanorods (NRs. The NR crystals of high surface density (~240 rods/μm2 and aspect ratio (~20.3 show greatly enhanced (002 degree of orientation and crystalline quality, when grown on the SLs annealed in vacuum, compared to those annealed in air or nitrogen ambient. This is due to the vacuum-annealed SL crystals of a highly preferred orientation toward (002 and large grain sizes. X-ray photoelectron spectroscopy also reveals that the highest O/Zn atomic ratio of 0.89 is obtained in the case of vacuum-annealed SL crystals, which is due to the effective desorption of hydroxyl groups and other contaminants adsorbed on the surface formed during aqueous solution-based growth process. Near band edge emission (ultra violet range of 360–400 nm of the vacuum-annealed SLs is also enhanced by 44% and 33% as compared to those annealed in air and nitrogen ambient, respectively, in photoluminescence with significant suppression of visible light emission associated with deep level transition. Due to this improvement of SL optical crystalline quality, the NR crystals grown on the vacuum-annealed SLs produce ~3 times higher ultra violet emission intensity than the other samples. In summary, it is shown that the ZnO NRs preferentially grow along the wurtzite c-axis direction, thereby producing the high crystalline quality of nanostructures when they grow on the vacuum-annealed SLs of high crystalline quality with minimized impurities and excellent preferred orientation. The ZnO nanostructures of high crystalline quality achieved in this study can be utilized for a wide range of potential device applications such as laser diodes, light-emitting diodes, piezoelectric transducers and generators, gas sensors, and ultraviolet detectors.

  10. Possible THz gain in superlattices at a stable operation point

    DEFF Research Database (Denmark)

    Wacker, Andreas; Allen, S. J.; Scott, J. S.

    1997-01-01

    We demonstrate that semiconductor superlattices may provide gain at THz frequencies at an operation point which is stable against fluctuations at lower frequency. While an explicit experimental demonstration for the sample considered could not be achieved, the underlying principle of quantum resp...... response is quite general and may prove successful for differently designed superlattices....

  11. Wave-function reconstruction in a graded semiconductor superlattice

    DEFF Research Database (Denmark)

    Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.

    2004-01-01

    We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...

  12. Thermal Conductivity of Graphene-hBN Superlattice Ribbons.

    Science.gov (United States)

    Felix, Isaac M; Pereira, Luiz Felipe C

    2018-02-09

    Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.

  13. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  14. Superlattice configurations in linear chain hydrocarbon binary mixtures

    Indian Academy of Sciences (India)

    Unknown

    Long-chain alkanes; binary mixtures; superlattices; discrete orientational changes. 1. Introduction ... tem and a model of superlattice configuration was proposed4, in terms of .... C18 system,4 the angle with value = 3⋅3° was seen to play an ...

  15. Morphological dependent Indium incorporation in InGaN/GaN multiple quantum wells structure grown on 4° misoriented sapphire substrate

    Directory of Open Access Journals (Sweden)

    Teng Jiang

    2016-03-01

    Full Text Available The epitaxial layers of InGaN/GaN MQWs structure were grown on both planar and vicinal sapphire substrates by metal organic chemical vapor deposition. By comparing the epitaxial layers grown on planar substrate, the sample grown on 4° misoriented from c-plane toward m-plane substrate exhibited many variations both on surface morphology and optical properties according to the scanning electronic microscopy and cathodoluminescence (CL spectroscopy results. Many huge steps were observed in the misoriented sample and a large amount of V-shape defects located around the boundary of the steps. Atoms force microscopy images show that the steps were inclined and deep grooves were formed at the boundary of the adjacent steps. Phase separation was observed in the CL spectra. CL mapping results also indicated that the deep grooves could effectively influence the localization of Indium atoms and form an In-rich region.

  16. Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Prabhakar, Sanjay, E-mail: sprabhakar@wlu.ca [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Melnik, Roderick [M 2NeT Laboratory, Wilfrid Laurier University, 75 University Avenue West, Waterloo, Ontario N2L 3C5 (Canada); Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Bonilla, Luis L. [Gregorio Millan Institute, Universidad Carlos III de Madrid, 28911 Leganes (Spain); Raynolds, James E. [Drinker Biddle and Reath LLP, Washington, DC 20005 (United States)

    2013-12-02

    We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges.

  17. Spin echo dynamics under an applied drift field in graphene nanoribbon superlattices

    International Nuclear Information System (INIS)

    Prabhakar, Sanjay; Melnik, Roderick; Bonilla, Luis L.; Raynolds, James E.

    2013-01-01

    We investigate the evolution of spin dynamics in graphene nanoribbon superlattices (GNSLs) with armchair and zigzag edges in the presence of a drift field. We determine the exact evolution operator and show that it exhibits spin echo phenomena due to rapid oscillations of the quantum states along the ribbon. The evolution of the spin polarization is accompanied by strong beating patterns. We also provide detailed analysis of the band structure of GNSLs with armchair and zigzag edges

  18. Effect of substrate temperature on the structure of amorphous oxygenated hydrocarbon films grown with a pulsed supersonic methane plasma flow

    Energy Technology Data Exchange (ETDEWEB)

    Fedoseeva, Yu. V., E-mail: fedoseeva@niic.nsc.ru [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Pozdnyakov, G.A. [Khristianovich Institute of Theoretical and Applied Mechanics, SB RAS, Novosibirsk 630090 (Russian Federation); Okotrub, A.V.; Kanygin, M.A. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation); Nastaushev, Yu. V. [Rzhanov Institute of Semiconductor Physics SB RAS, Novosibirsk 630090 (Russian Federation); Vilkov, O.Y. [St. Petersburg State University, St. Petersburg 198504 (Russian Federation); Bulusheva, L.G. [Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk 630090 (Russian Federation); Novosibirsk State University, Novosibirsk 630090 (Russian Federation)

    2016-11-01

    Highlights: • A deposition of supersonic methane plasma flow on silicon substrate produces amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) film. • The thickness, composition, and wettability of the film depend on the substrate temperature. • A rise of the substrate temperature from 500 to 700 °C promotes the sp{sup 3}-hybridization carbon formation. - Abstract: Since amorphous oxygenated hydrocarbon (CO{sub x}H{sub y}) films are promising engineering materials a study of the structure and composition of the films depending on the conditions of synthesis is important for controlling of their physicochemical properties. Here, we used the methods of scanning and transmission electron microscopy, X-ray photoelectron, near-edge X-ray absorption fine structure, Fourier transform infrared and Raman spectroscopy to reveal changes in the chemical connectivity of CO{sub x}H{sub y} films grown on silicon substrates heated to 300, 500, and 700 °C using a supersonic flow of methane plasma. It was found that the CO{sub x}H{sub y} films, deposited at 300 and 500 °C, were mainly composed of the sp{sup 2}-hybridized carbon areas with various oxygen species. A rise of the substrate temperature caused an increase of the portion of tetrahedral carbon atoms as well as carboxyl and hydroxyl groups. With growth of the substrate temperature, the film thickness reduced monotonically from 400 to 180 nm, while the film adhesion improved substantially. The films, deposited at lower temperatures, showed high hydrophilicity due to porosity and presence of oxygenated groups both at the surface and in the bulk.

  19. Atomic stacking and van-der-Waals bonding in GeTe-Sb2Te3 superlattices

    NARCIS (Netherlands)

    Momand, J.; Lange, F.R.L.; Wang, R.; Boschker, J.E.; Verheijen, M.A.; Calarco, R.; Wuttig, M.; Kooi, B.J.

    2016-01-01

    GeTe–Sb2Te3 superlattices have attracted major interest in the field of phase-change memories due to their improved properties compared with their mixed counterparts. However, their crystal structure and resistance-switching mechanism are currently not clearly understood. In this work epitaxial

  20. Structural and morphological characterizations of ZnO films grown on GaAs substrates by MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Agouram, S.; Zuniga Perez, J.; Munoz-Sanjose, V. [Universitat de Valencia, Departamento de Fisica Aplicada y Electromagnetismo, Burjassot (Spain)

    2007-07-15

    ZnO films were grown on GaAs(100), GaAs(111)A and GaAs(111)B substrates by metal organic chemical vapour deposition (MOCVD). Diethylzinc (DEZn) and tertiarybutanol (t-butanol) were used as Zn and O precursors, respectively. The influence of the growth temperature and GaAs substrate orientation on the crystalline orientation and morphology of the ZnO grown films has been analysed. Crystallinity of grown films was studied by X-ray diffraction (XRD); thickness and morphology of ZnO films were investigated by scanning electron microscopy (SEM). SEM results reveal significant differences between morphologies depending on growth temperature but not significant differences were detected on the texture of grown films. (orig.)

  1. Electronic structure and fine structural features of the air-grown UNxOy on nitrogen-rich uranium nitride

    Science.gov (United States)

    Long, Zhong; Zeng, Rongguang; Hu, Yin; Liu, Jing; Wang, Wenyuan; Zhao, Yawen; Luo, Zhipeng; Bai, Bin; Wang, Xiaofang; Liu, Kezhao

    2018-06-01

    Oxide formation on surface of nitrogen-rich uranium nitride film/particles was investigated using X-ray photoelectron spectroscopy (XPS), auger electron spectroscopy (AES), aberration-corrected transmission electron microscopy (TEM), and high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) coupled with electron energy-loss spectroscopy (EELS). XPS and AES studies indicated that the oxidized layer on UN2-x film is ternary compound uranium oxynitride (UNxOy) in 5-10 nm thickness. TEM/HAADF-STEM and EELS studies revealed the UNxOy crystallizes in the FCC CaF2-type structure with the lattice parameter close to the CaF2-type UN2-x matrix. The work can provide further information to the oxidation mechanism of uranium nitride.

  2. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  3. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar

    2016-06-07

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  4. Synthesis of In0.1Ga0.9N/GaN structures grown by MOCVD and MBE for high speed optoelectronics

    KAUST Repository

    Alshehri, Bandar; Dogheche, Karim; Belahsene, Sofiane; Janjua, Bilal; Ramdane, Abderrahim; Patriarche, Gilles; Ng, Tien Khee; S-Ooi, Boon; Decoster, Didier; Dogheche, Elhadj

    2016-01-01

    In this work, we report a comparative investigation of InxGa1-xN (SL) and InxGa1-xN/GaN (MQW) structures with an indium content equivalent to x=10%. Both structures are grown on (0001) sapphire substrates using MOCVD and MBE growth techniques. Optical properties are evaluated for samples using PL characteristics. Critical differences between the resulting epitaxy are observed. Microstructures have been assessed in terms of crystalline quality, density of dislocations and surface morphology. We have focused our study towards the fabrication of vertical PIN photodiodes. The technological process has been optimized as a function of the material structure. From the optical and electrical characteristics, this study demonstrates the benefit of InGaN/GaN MQW grown by MOCVD in comparison with MBE for high speed optoelectronic applications.

  5. Structural properties of Pt/TiO{sub 2}/Pt heterostructure grown on sapphire substrate—Influence of annealing processes

    Energy Technology Data Exchange (ETDEWEB)

    Roch, Tomas, E-mail: roch@fmph.uniba.sk; Durina, Pavol; Grancic, Branislav; Gregor, Maros; Plecenik, Tomas; Truchly, Martin; Mikula, Marian; Satrapinskyy, Leonid; Kus, Peter; Plecenik, Andrej

    2014-09-01

    Highlights: • Pt/TiO{sub 2}/Pt, Pt/TiO{sub 2} and TiO{sub 2}/Pt stacks were grown on (c-cut) Al{sub 2}O{sub 3} and annealed at 600 °C. • Pt/TiO{sub 2}/Pt contains both TiO{sub 2}-anatase (27%) and rutile (73%) phases after annealing. • Pt/TiO{sub 2} contains both anatase and rutile, TiO{sub 2}/Pt anatase phase only. • Epitaxial relationship of bottom platinum: Pt(1 1 1)[1–10]||sub(0 0 0 1)[11{sup ¯}00]. • Platinum top layer is uniaxially oriented: Pt(1 1 1)||sub(0 0 0 1). - Abstract: Simple gas sensors based on resistivity change of TiO{sub 2} thin films using combined top and bottom metallic contacts are very promising. In this work influence of ex situ annealing in ambient air on structure of TiO{sub 2} thin film stacked between two platinum contact layers has been studied. The layers were deposited using DC magnetron sputtering on unheated c-cut sapphire substrates. For lowering of the Schottky barrier at the Pt–TiO{sub 2} interfaces and for improved crystalline stability, ex situ annealing at 600 °C in air was carried out. In order to study separately influence of top and bottom platinum layers on crystal structure, also reference samples Pt/TiO{sub 2}/Al{sub 2}O{sub 3} and TiO{sub 2}/Pt/Al{sub 2}O{sub 3} have been prepared. Non-ambient X-ray diffraction measurement during annealing process and X-ray pole figures after annealing has been measured. Near epitaxial relationship was observed for bottom Pt layer grown on c-cut sapphire substrate: Pt(1 1 1)[11{sup ¯}0]||Al{sub 2}O{sub 3}(0 0 0 1)[11{sup ¯}00]. Inner titania layer shows randomly oriented both TiO{sub 2}-rutile (R) and anatase (A) phases with the volumetric ratio of R/A ∼ 2.7. If prepared without top Pt contact layer, the TiO{sub 2} transforms during annealing to random single anatase phase. The TiO{sub 2} layer overgrown with only single Pt top contact layer shows randomly oriented both rutile and anatase phases with volumetric ratio R/A ∼ 2.3. The top Pt layer on TiO{sub 2

  6. Full Polarization Analysis of Resonant Superlattice and Forbidden x-ray Reflections in Magnetite

    International Nuclear Information System (INIS)

    Wilkins, S.B.; Bland, S.R.; Detlefs, B.; Beale, T.A.W.; Mazzoli, C.; Joly, Y.; Hatton, P.D.; Lorenzo, J.E.; Brabers, V.A.M.

    2009-01-01

    Despite being one of the oldest known magnetic materials, and the classic mixed valence compound, thought to be charge ordered, the structure of magnetite below the Verwey transition is complex and the presence and role of charge order is still being debated. Here, we present resonant x-ray diffraction data at the iron K-edge on forbidden (0, 0, 2n+1) C and superlattice (0, 0, 2n+1/2)C reflections. Full linear polarization analysis of the incident and scattered light was conducted in order to explore the origins of the reflections. Through simulation of the resonant spectra we have confirmed that a degree of charge ordering takes place, while the anisotropic tensor of susceptibility scattering is responsible for the superlattice reflections below the Verwey transition. We also report the surprising result of the conversion of a significant proportion of the scattered light from linear to nonlinear polarization.

  7. Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

    International Nuclear Information System (INIS)

    Wang, Yu

    2014-01-01

    We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

  8. THz elastic dynamics in finite-size CoFeB-MgO phononic superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ulrichs, Henning, E-mail: hulrich@gwdg.de; Meyer, Dennis; Müller, Markus; Wittrock, Steffen; Mansurova, Maria [I. Physical Institute, Georg-August University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen (Germany); Walowski, Jakob; Münzenberg, Markus [Institute of Physics, Ernst-Moritz-Arndt University of Greifswald, Felix-Hausdorff-Str. 6, 17489 Greifswald (Germany)

    2016-10-14

    In this article, we present the observation of coherent elastic dynamics in a nano-scale phononic superlattice, which consists of only 4 bilayers. We demonstrate how ultra-short light pulses with a length of 40 fs can be utilized to excite a coherent elastic wave at 0.535 THz, which persist over about 20 ps. In later steps of the elastic dynamics, modes with frequency of 1.7 THz and above appear. All these modes are related to acoustic band gaps. Thus, the periodicity strongly manifests in the wave physics, although the system under investigation has only a small number of spatial periods. To further illustrate this, we show how by breaking the translational invariance of the superlattice, these features can be suppressed. Discussed in terms of phonon blocking and radiation, we elucidate in how far our structures can be considered as useful building blocks for phononic devices.

  9. Space-time evolution of Gaussian wave packets through superlattices containing left-handed layers

    Energy Technology Data Exchange (ETDEWEB)

    Pereyra, P; Romero-Serrano, M [Departamento de Ciencias Basicas, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico); Robledo-Martinez, A, E-mail: ppereyra@correo.azc.uam.m, E-mail: a.robledo@mailaps.or [Departamento de EnergIa, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico)

    2009-05-01

    We study the space-time evolution of Gaussian electromagnetic wave packets moving through (L/R){sup n} superlattices, containing alternating layers of left and right-handed materials. We show that the time spent by the wave packet moving through arbitrary (L/R){sup n} superlattices are well described by the phase time. We show that in the particular case where the thicknesses d{sub L,R} and indices n{sub l,r} of the layers satisfy the condition d{sub L}|n{sub L}| = d{sub R}n{sub R}, the usual band structure becomes a sequence of isolated and equidistant peaks with negative phase times.

  10. Structural identification of lipopeptide biosurfactants produced by Bacillus subtilis strains grown on the media obtained from renewable natural resources.

    Science.gov (United States)

    Paraszkiewicz, Katarzyna; Bernat, Przemysław; Kuśmierska, Anna; Chojniak, Joanna; Płaza, Grażyna

    2018-03-01

    The aim of the study was to identify and characterize lipopeptide (LP) biosurfactants produced by two Bacillus subtilis strains (KP7 and I'-1a) grown on various media prepared from renewable natural resources: two different brewery wastewaters (BW#4 and BW#6), 2% beet molasses (M), apple peels extract (APE) supplemented with 0.25% of yeast extract (YE) or 0.25% peptone (P), and similarly supplemented carrot peels extract (CPE). In all used media both strains retained their individual LP production signature characterized by surfactin and iturin overproduction exhibited by KP7 and I'-1a strain, respectively. The production level and the structural diversity of synthesized LPs were dependent on the medium composition. In the CPE+YE medium it was higher than the yield obtained in Luria-Bertani (140.6 and 100.3 mg L -1 , respectively). Surfactins were produced by both strains as a mixture of four homologues (C13-C16) with the domination of variant C14. All other broths prepared from renewable resources strongly stimulated the iturin production by I'-1a strain with the exception of BW media. The highest iturin concentration (428.7 mg L -1 ) obtained in the CPE+P culture of I'-1a strain was about seven-fold higher than in LB. In all cultures only iturin A was identified. Among four iturin homologues (C13-16) produced by I'-1a strain, the highest relative contents of C16 variant (70-80%) were calculated for samples obtained from APE+P and CPE+P media. The obtained data indicate that the waste composition has an influence on both the types and amounts of biosurfactants produced by studied B. subtilis strains. Copyright © 2017 Elsevier Ltd. All rights reserved.

  11. Optical and structural properties of Mn-doped ZnO nanorods grown by aqueous chemical growth for spintronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Strelchuk, V.V. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Nikolenko, A.S., E-mail: nikolenko_mail@ukr.net [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Kolomys, O.F.; Rarata, S.V.; Avramenko, K.A.; Lytvyn, P.M. [V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Nauky pr., 03028 Kyiv (Ukraine); Tronc, P. [Centre National de la Recherche Scientifique, Ecole Superieure de Physique et de Chimie Industrielles de la Ville de Paris, 10 rue Vauquelin, 75005 Paris (France); Chey, Chan Oeurn; Nur, Omer; Willander, Magnus [Department of Science and Technology, Linköping University, 601 74 Norrköping (Sweden)

    2016-02-29

    The effect of Mn-doping on the structural, morphological, optical and magnetic properties of the ZnO:Mn nanorods (NRs) synthesized by aqueous chemical process is reported. Grown ZnO:Mn NRs are shown to have hexagonal end facets and the diameters increasing with nominal Mn content. Optical absorption measurements show a decrease in optical band gap with increase of Mn concentration. Raman spectroscopy revealed significant modification of the lattice vibrational properties of the ZnO matrix upon Mn doping. The additional Mn-related vibrational mode, intensity of which increases with amount of Mn can be regarded as an evidence of Mn incorporation into the host lattice of the ZnO. At high Mn concentrations, coexistence of hexagonal Zn{sub 1−x}Mn{sub x}O phase along with the secondary phases of ZnMn{sub 2}O{sub 4} cubic spinel is revealed. Magnetic properties of ZnO:Mn NRs are studied by combinatorial atomic force microscopy and magnetic force microscopy imaging, and obtained clear magnetic contrast at room temperature provides a strong evidence of ferromagnetic behavior. - Highlights: • Synthesis of Mn-doped ZnO nanorods by hydrothermal method is demonstrated. • Doping with Mn significantly changes the morphology of ZnO nanorods. • Additional Mn-induced Raman modes evidence incorporation of Mn into ZnO matrix. • Formation of secondary ZnMn{sub 2}O{sub 4} spinel phase is found at high Mn concentrations. • Contrast MFM images of ZnO:Mn nanorods indicate ferromagnetism at room temperature.

  12. Formation mechanism of dot-line square superlattice pattern in dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Weibo; Dong, Lifang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com; Wang, Yongjie; Zhang, Xinpu [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China); Pan, Yuyang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com [College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China)

    2014-11-15

    We investigate the formation mechanism of the dot-line square superlattice pattern (DLSSP) in dielectric barrier discharge. The spatio-temporal structure studied by using the intensified-charge coupled device camera shows that the DLSSP is an interleaving of three different subpatterns in one half voltage cycle. The dot square lattice discharges first and, then, the two kinds of line square lattices, which form square grid structures discharge twice. When the gas pressure is varied, DLSSP can transform from square superlattice pattern (SSP). The spectral line profile method is used to compare the electron densities, which represent the amounts of surface charges qualitatively. It is found that the amount of surface charges accumulated by the first discharge of DLSSP is less than that of SSP, leading to a bigger discharge area of the following discharge (lines of DLSSP instead of halos of SSP). The spatial distribution of the electric field of the surface charges is simulated to explain the formation of DLSSP. This paper may provide a deeper understanding for the formation mechanism of complex superlattice patterns in DBD.

  13. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  14. Stress engineering in GaN structures grown on Si(111) substrates by SiN masking layer application

    Energy Technology Data Exchange (ETDEWEB)

    Szymański, Tomasz, E-mail: tomasz.szymanski@pwr.edu.pl; Wośko, Mateusz; Paszkiewicz, Bogdan; Paszkiewicz, Regina [The Faculty of Microsystem Electronics and Photonics, Wrocaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw (Poland); Drzik, Milan [International Laser Center, Ilkovicova 3, 841-04 Bratislava 4 (Slovakia)

    2015-07-15

    GaN layers without and with an in-situ SiN mask were grown by using metal organic vapor phase epitaxy for three different approaches used in GaN on silicon(111) growth, and the physical and optical properties of the GaN layers were studied. For each approach applied, GaN layers of 1.4 μm total thickness were grown, using silan SiH{sub 4} as Si source in order to grow Si{sub x}N{sub x} masking layer. The optical micrographs, scanning electron microscope images, and atomic force microscope images of the grown samples revealed cracks for samples without SiN mask, and micropits, which were characteristic for the samples grown with SiN mask. In situ reflectance signal traces were studied showing a decrease of layer coalescence time and higher degree of 3D growth mode for samples with SiN masking layer. Stress measurements were conducted by two methods—by recording micro-Raman spectra and ex-situ curvature radius measurement—additionally PLs spectra were obtained revealing blueshift of PL peak positions with increasing stress. The authors have shown that a SiN mask significantly improves physical and optical properties of GaN multilayer systems reducing stress in comparison to samples grown applying the same approaches but without SiN masking layer.

  15. Engineering the oxygen coordination in digital superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Cook, Seyoung [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Andersen, Tassie K. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Hong, Hawoong [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Rosenberg, Richard A. [X-Ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA; Marks, Laurence D. [Department of Materials Science, Northwestern University, Evanston, Illinois 60202, USA; Fong, Dillon D. [Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

    2017-12-01

    The oxygen sublattice in the complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, demonstrating a new strategy for achieving unique electronic properties in the transition metal oxides.

  16. Anisotropic critical fields in superconducting superlattices

    International Nuclear Information System (INIS)

    Banerjee, I.; Yang, Q.S.; Falco, C.M.; Schuller, I.K.

    1983-01-01

    The temperature and angular dependence of critical fields (H/sub c/) have been studied as a function of layer thickness for superconducting Nb/Cu superlattices. For layer thicknesses between 100 and 300 A, dimensional crossover has been observed in the temperature dependence of H/sub c/. Associated with the crossover we find a change in the angular dependence of H/sub c/ to that given by the effective-mass theory. This is the first time that a relationship has been found between dimensional crossover observed in the temperature dependence and that in the angular dependence of critical fields

  17. Comparison of radiative and structural properties of 1.3 µm InxGa(1-x)As quantum-dot laser structures grown by metalorganic chemical vapor deposition and molecular-beam epitaxy: Effect on the lasing properties

    NARCIS (Netherlands)

    Passaseo, A.; Vittorio, de M.; Todaro, M.T.; Tarantini, I.; Giorgi, de M.; Cingolani, R.; Taurino, A.; Catalano, M.; Fiore, A.; Markus, A.; Chen, J.X.; Paranthoën, C.; Oesterle, U.; Ilegems, M.

    2003-01-01

    The authors have studied the radiative and structural properties of identical InxGa(1-x)As quantum dot laser structures grown by metalorg. CVD (MOCVD) and MBE. Despite the comparable emission properties found in the two devices by photoluminescence, electroluminescence, and photocurrent

  18. Structural Characterization and Antimicrobial Activity of a Biosurfactant Obtained From Bacillus pumilus DSVP18 Grown on Potato Peels

    Science.gov (United States)

    Sharma, Deepak; Ansari, Mohammad Javed; Gupta, Sonam; Al Ghamdi, Ahmad; Pruthi, Parul; Pruthi, Vikas

    2015-01-01

    Background: Biosurfactants constitute a structurally diverse group of surface-active compounds derived from microorganisms. They are widely used industrially in various industrial applications such as pharmaceutical and environmental sectors. Major limiting factor in biosurfactant production is their production cost. Objectives: The aim of this study was to investigate biosurfactant production under laboratory conditions with potato peels as the sole source of carbon source. Materials and Methods: A biosurfactant-producing bacterial strain (Bacillus pumilus DSVP18, NCBI GenBank accession no. GQ865643) was isolated from motor oil contaminated soil samples. Biochemical characteristics of the purified biosurfactant were determined and its chemical structure was analyzed. Stability studies were performed and biological activity of the biosurfactant was also evaluated. Results: The strain, when grown on modified minimal salt media supplemented with 2% potato peels as the sole carbon source, showed the ability to reduce Surface Tension (ST) value of the medium from 72 to 28.7 mN/m. The isolated biosurfactant (3.2 ± 0.32 g/L) was stable over a wide range of temperatures (20 - 120 ºC), pH (2-12) and salt concentrations (2 - 12%). When characterized using high-performance liquid chromatography (HPLC) and Fourier transform infrared spectroscopy, it was found to be a lipopeptide in nature, which was further confirmed by Matrix-assisted laser desorption/ionization time-of-flight mass spectrometry (mass peak 1044.60) and nuclear magnetic resonance (NMR) studies. Data showed that the isolated biosurfactant at the concentration range of 30 - 35 µg/ml had strong antimicrobial activity when tested against standard strains of Bacillus cereus, Escherichia coli, Salmonella enteritidis, Staphylococcus aureus and Paenibacillus larvae. Conclusions: Potato peels were proved to be potentially useful substrates for biosurfactant production by B. pumilus DSVP18. The strain possessed a

  19. Structure and magnetism of ultrathin Co and Fe films epitaxially grown on Pd/Cu(0 0 1)

    International Nuclear Information System (INIS)

    Lu, Y.F.; Przybylski, M.; Yan, L.; Barthel, J.; Meyerheim, H.L.; Kirschner, J.

    2005-01-01

    A contribution originating from the Co/Pd and Fe/Pd interfaces to the magneto-optical Kerr effect (MOKE) rotation is analyzed for Co and/or Fe films grown on a Pd-buffer-monolayer on Cu(0 0 1). A clear increase of the MOKE signal in comparison to the Co(Fe) films grown directly on Cu(0 0 1) is detected. An interpretation is supported by similar observations for Co films grown on Pd(1 1 0) and Pd(0 0 1). In particular, the sign reversal of the Kerr loops with increasing thickness of the Co(Fe) films is discussed. Magneto-optical effects are separated from the real magnetization and its dependence on the film thickness

  20. Effect of annealing on structural and optical properties of Cu_2ZnSnS_4 thin films grown by pulsed laser deposition

    International Nuclear Information System (INIS)

    Surgina, G.D.; Nevolin, V.N.; Sipaylo, I.P.; Teterin, P.E.; Medvedeva, S.S.; Lebedinsky, Yu.Yu.; Zenkevich, A.V.

    2015-01-01

    In this work, we compare the effect of different types of thermal annealing on the morphological, structural and optical properties of Cu_2ZnSnS_4 (CZTS) thin films grown by reactive Pulsed Laser Deposition in H_2S flow. Rutherford backscattering spectrometry, atomic force microscopy, X-ray diffraction, Raman spectroscopy and optical spectrophotometry data reveal dramatic increase of the band gap and the crystallite size without the formation of secondary phases upon annealing in N_2 at the optimized conditions. - Highlights: • Cu_2ZnSnS_4 (CZTS) thin films were grown at room temperature. • Reactive Pulsed Laser Deposition in H_2S flow was used as a growth method. • Effect of annealing conditions on CZTS structural and optical properties is revealed. • Both the grain size and the band gap of CZTS film increase following the annealing. • Annealing in N_2 effectively inhibits the formation of Sn_xS secondary phases.

  1. Effects of the annealing duration of the ZnO buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Shin, C.M.; Lee, J.Y.; Heo, J.H.; Park, J.H.; Kim, C.R. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, 1 Dongsam-dong, Yeongdo-Ku, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Gwaebeop-dong, Sasang-gu, Busan 617-736 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Tan, S.T. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); Zhao, J.L. [School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore); Sun, X.W. [Institute of Microelectronics, 11 Science Park Road, Science Park II, Singapore 117685 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798 (Singapore)

    2009-07-30

    In this study, the effects of the annealing duration of a zinc oxide (ZnO) buffer layer on structural and optical properties of ZnO rods grown by a hydrothermal process are discussed. A ZnO buffer layer was deposited on p-type Si (1 1 1) substrates by the metal organic chemical vapor deposition (MOCVD) method. After that, ZnO rods were grown on the ZnO-buffer/Si (1 1 1) substrate by a hydrothermal process. In order to determine the optimum annealing duration of the buffer layer for the growth of ZnO rods, durations ranging from 0.5 to 30 min were tried. The morphology and crystal structure of the ZnO/ZnO-buffer/Si (1 1 1) were measured by field emission scanning electron microscopy (FE-SEM) and x-ray diffraction (XRD). The optical properties were investigated by photoluminescence (PL) measurement.

  2. A Systematic Study of the Relationship among the Morphological, Structural and Photoelectrochemical Properties of ZnO Nanorods Grown Using the Microwave Chemical Bath Deposition Method

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Sungjin; Ryu, Hyukhyun [Inje University, Gimhae (Korea, Republic of); Lee, Won-Jae [Dong-Eui University, Busan (Korea, Republic of)

    2017-08-15

    In this study, zinc oxide (ZnO) nanostructures were grown on a ZnO seed layer/fluorine-doped tin oxide (FTO) substrate for different growth durations ranging from 5 to 40 min using the microwave chemical bath deposition method. We studied the effect of growth duration on the morphological, structural, optical and photoelectrochemical properties of the ZnO nanostructures. From this study, we found that the photoelectrochemical properties of the ZnO nanostructures were largely affected by their morphological and structural properties. As a result, we obtained the highest photocurrent density of 0.46 mA/cm{sup 2} (at 1.5 V vs. SCE) from the sample grown for 30 min.

  3. Temperature dependence of optical transitions in Al xGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Caballero-Rosas, A.; Mejia-Garcia, C.; Contreras-Puente, G.; Lopez-Lopez, M.

    2005-01-01

    Quantum well (QW) structures of Al x Ga 1-x As/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl 2 -etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 deg. C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Paessler model

  4. Structural characteristics and physical properties of diortho(pyro)silicate crystals of lanthanides yttrium and scandium grown by the Czochralski technique

    Energy Technology Data Exchange (ETDEWEB)

    Anan' eva, G.V.; Karapetyan, V.E.; Korovkin, A.M.; Merkulyaeva, T.I.; Peschanskaya, I.A.; Savinova, I.P.; Feofilov, P.P. (Gosudarstvennyj Opticheskij Inst., Leningrad (USSR))

    1982-03-01

    Optically uniform monocrystals of diortho (pyro) silicates of lanthanides, yttrium, and scandium were grown by the Czochralski technique. Four structural types of Ln/sub 2/(Si/sub 2/O/sub 7/) crystals were determined by the roentgenographic method. The presence of structural subgroups was also supported by the method of spectroscopic probes. Structural parameters were determined and data on certain physical properties (fusion temperature, density, refractive indices, transparency) of investigated crystals were presented. The generation of induced emission at lambda=1.057 ..mu..m was obtained in La/sub 2/(Si/sub 2/O/sub 7/)-Nd/sup 3 +/ crystal.

  5. Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator

    Energy Technology Data Exchange (ETDEWEB)

    Sawano, K., E-mail: sawano@tcu.ac.jp [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Hoshi, Y.; Kubo, S. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan); Arimoto, K.; Yamanaka, J.; Nakagawa, K. [Center for Crystal Science and Technology, University of Yamanashi, 7 Miyamae-cho, Kofu (Japan); Hamaya, K. [Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka (Japan); Miyao, M. [Department of Electronics, Kyushu University, 744 Motooka, Fukuoka (Japan); Shiraki, Y. [Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo (Japan)

    2016-08-31

    Structural and electrical properties of a Ge(111) layer directly grown on a Si(111) substrate are studied. Via optimized two-step growth manner, we form a high-quality relaxed Ge layer, where strain-relieving dislocations are confined close to a Ge/Si interface. Consequently, a density of holes, which unintentionally come from crystal defects, is highly suppressed below 4 × 10{sup 16} cm{sup −3}, which leads to significantly high hole Hall mobility exceeding 1500 cm{sup 2}/Vs at room temperature. By layer transfer of the grown Ge layer, we also fabricate a Ge(111)-on-Insulator, which is a promising template for high-performance Ge-based electronic and photonic devices. - Highlights: • A high-quality Ge layer is epitaxially grown on a Si(111) by two-step growth manner. • Growth conditions, such as growth temperatures, are optimized. • Very high hole mobility is obtained from Ge(111) grown on Si(111). • High-quality thin Ge-on-Insulator with (111) orientation is obtained.

  6. Microwave absorption in YBCO/PrBCO superlattices

    International Nuclear Information System (INIS)

    Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

    1992-01-01

    In this paper, non-resonant microwave absorption is employed to probe YBCO/PrBCO superlattices and compare the response to that of a YBCO film. Near the transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependencies. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependencies, which the authors attribute to the role of the PrBCO layers

  7. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  8. Excitation on breather (bion) in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.

    1999-09-01

    Soliton breather excitation in superlattice has been studied in this paper. It is observed that under certain conditions, the vector potential equation for the electromagnetic wave propagating through the superlattice assumes the sine-Gordon(sG) equation. The solution of which does not give only a soliton but also a soliton breather. The binding energy of the breather is calculated to be E b = 16γ(1 - sin ν), γ = (1 - u 2 /v 0 2 ) -1/2 where u is the velocity of the breather and v 0 is the velocity of the electromagnetic wave in the absence of electrons. As can be seen, when ν → π/2 the binding energy tends to zero, hence, the breather disintegrates into a soliton and antisoliton. It was further observed that the binding energy decreases with an increase in Δ (the half miniband width) for a given value of d (SL period). Similarly it also decreases with increase in d for a given value of Δ. Comparing the breather's rest energy E b to that of soliton E s i.e E b = 2E s sin ν. We noted that the breather's rest energy is less than that required to excite a soliton. (author)

  9. Free-Standing Bilayered Nanoparticle Superlattice Nanosheets with Asymmetric Ionic Transport Behaviors.

    Science.gov (United States)

    Rao, Siyuan; Si, Kae Jye; Yap, Lim Wei; Xiang, Yan; Cheng, Wenlong

    2015-11-24

    Natural cell membranes can directionally and selectively regulate the ion transport, which is critical for the functioning of living cells. Here, we report on the fabrication of an artificial membrane based on an asymmetric nanoparticle superlattice bilayered nanosheet, which exhibits similar ion transport characteristics. The superlattice nanosheets were fabricated via a drying-mediated self-assembly of polystyrene-capped gold nanoparticles at the liquid-air interface. By adopting a layer-by-layer assembly process, an asymmetric nanomembrane could be obtained consisting of two nanosheets with different nanoparticle size. The resulting nanomembranes exhibit an asymmetric ion transport behavior, and diode-like current-voltage curves were observed. The asymmetric ion transport is attributed to the cone-like nanochannels formed within the membranes, upon which a simulation map was established to illustrate the relationship between the channel structure and the ionic selectivity, in consistency with our experimental results. Our superlattice nanosheet-based design presents a promising strategy for the fabrication of next-generation smart nanomembranes for rationally and selectively regulating the ion transport even at a large ion flux, with potential applications in a wide range of fields, including biosensor devices, energy conversion, biophotonics, and bioelectronics.

  10. InGaNAs/GaAs multi-quantum wells and superlattices solar cells

    International Nuclear Information System (INIS)

    Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis

    2011-01-01

    A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)

  11. Interface-Induced Nucleation, Orientational Alignment and Symmetry Transformations in Nanocube Superlattices

    KAUST Repository

    Choi, Joshua J.

    2012-09-12

    The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ synchrotron-based X-ray scattering. We combined small-angle and wide-angle scattering to investigate the translational ordering of nanocrystals and their orientational ordering in the lattice sites, respectively. We found that cubic PbSe nanocrystals assembled into a face-up (i.e., 〈100〉 normal to the interface) configuration at the liquid/substrate interface whereas nanocubes at the liquid/air interface assume a corner-up (i.e., 〈111〉 normal to the interface) configuration. The latter nanocrystal superlattice displays polymorphism as a function inter-NC separation distance. We explain the observed superlattice structure polymorphs in terms of the interactions directing the self-assembly. Insights into the directed self-assembly of superlattices gained from this study have important implication on the future development of nanocrystals as building blocks in artificial solids. © 2012 American Chemical Society.

  12. Bi-continuous Multi-component Nanocrystal Superlattices for Solar Energy Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie [University of Pennsylvania; Murray, Christopher [University of Pennsylvania; Kikkawa, James [University of Pennsylvania; Engheta, Nader [University of Pennsylvania

    2017-06-14

    Our SISGR program studied an emerging class of nanomaterials wherein different combinations of semiconductor or semiconductor and plasmonic nanocrystals (NCs) are self-assembled into three-dimensional multi-component superlattices. The NC assemblies were designed to form bicontinuous semiconductor NC sublattices with type-II energy offsets to drive charge separation onto electron and hole transporting sublattices for collection and introduce plasmonic NCs to increase solar absorption and charge separation. Our group is expert in synthesizing and assembling an extraordinary variety of artificial systems by tailoring the NC building blocks and the superlattice unit cell geometry. Under this DOE BES Materials Chemistry program, we introduced chemical methods to control inter-particle distance and to dope NC assemblies, which enabled our demonstration of strong electronic communication between NCs and the use of NC thin films as electronic materials. We synthesized, assembled and structurally, spectroscopically, and electrically probed NC superlattices to understand and manipulate the flow of energy and charge toward discovering the design rules and optimizing these complex architectures to create materials that efficiently convert solar radiation into electricity.

  13. Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

    International Nuclear Information System (INIS)

    Kannappan, P.; Asokan, K.; Krishna, J.B.M.; Dhanasekaran, R.

    2013-01-01

    Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au 9+ ions at room temperature with fluences of 1 × 10 12 and 5 × 10 12 ions/cm 2 . The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail

  14. Effect of SHI irradiation on structural, surface morphological and optical studies of CVT grown ZnSSe single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Kannappan, P. [Crystal Growth Centre, Anna University, Chennai 600 025 (India); Asokan, K. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India); Krishna, J.B.M. [UGC-DAE Consortium for Scientific Research, III-/LB-8, Bidhan nagar, Kolkata 700 098 (India); Dhanasekaran, R., E-mail: rdcgc@yahoo.com [Crystal Growth Centre, Anna University, Chennai 600 025 (India)

    2013-12-15

    Highlights: •CVT grown ZnSSe single crystals were irradiated with 120 MeV Au ion. •The GIXRD results show the FWHM increases with increasing ion fluency. •The AFM study show the surface roughness increases with ion fluency. •The optical band gap energy vary with increasing ion fluency. •The PL emission decreases with increasing ion fluency. -- Abstract: The ZnSSe single crystals grown by chemical vapour transport (CVT) method have been irradiated by 120 MeV Au{sup 9+} ions at room temperature with fluences of 1 × 10{sup 12} and 5 × 10{sup 12} ions/cm{sup 2}. The grazing incidence X-ray diffraction (GIXRD) results show that the full width at half maximum (FWHM) value for the as grown ZnSSe crystal is 0.215°; and for the irradiated samples, the FWHM values are 0.413° and 0.625°, with the increase of ion fluences. The atomic force microscopy (AFM) studies reveal the formation of the pits and islands due to irradiation. The optical absorption cut off wavelength is found to be 441 nm for as grown ZnSSe crystal. The cut off values are increased to 447 nm and 457 nm for the irradiated samples with increasing ion fluency. The photoluminescence studies show the emission for the as grown ZnSSe is 590 nm whereas for the irradiated samples in the emission range it is 580–590 nm and 575–595 nm due to SHI irradiation. FT-Raman spectra analysis has been made for the ZnSSe single crystals and irradiated samples. The results are discussed in detail.

  15. Defect attributed variations of the photoconductivity and photoluminescence in the HVPE and MOCVD as-grown and irradiated GaN structures

    International Nuclear Information System (INIS)

    Gaubas, E.; Pobedinskas, P.; Vaitkus, J.; Uleckas, A.; Zukauskas, A.; Blue, A.; Rahman, M.; Smith, K.M.; Aujol, E.; Beaumont, B.; Faurie, J.-P.; Gibart, P.

    2005-01-01

    The effect of native and radiation induced defects on the photoconductivity transients and photoluminescence spectra have been examined in GaN epitaxial layers of 2.5 and 12μm thickness grown on bulk n-GaN/sapphire substrates by metal-organic chemical vapor deposition (MOCVD). For comparison, free-standing GaN as-grown samples of 500μm thickness, fabricated by hydride vapor phase epitaxy (HVPE), were investigated. Manifestation of defects induced by 10-keV X-ray irradiation with the dose of 600Mrad and 100-keV neutrons with the fluences of 5x10 14 and 10 16 cm -2 as well as of 24GeV/c protons with fluence 10 16 cm -2 have been revealed through contact photoconductivity and microwave absorption transients. The amplitude of the initial photoconductivity decay is significantly reduced by the native and radiation defects density. Synchronous decrease of the steady-state PL intensity of yellow, blue and ultraviolet bands peaked at 2.18, 2.85, and 3.42eV, respectively, with density of radiation-induced defects is observed. The decrease of the PL intensity is accompanied by an increase of asymptotic decay lifetime in the photoconductivity transients, which is due to excess-carrier multi-trapping. The decay fits the stretched exponent approximation exp[-(t/τ) α ] with the different factors α in as-grown material (α∼0.7) and irradiated samples (α∼0.3). The fracton dimension d s of disordered structure changes from 4.7 to 0.86 for as-grown and irradiated material, respectively, and it implies the percolative carrier motion on an infinite cluster of dislocations net in the as-grown material and cluster fragmentation into finite fractons after irradiations

  16. Density functional theory computational study of ferroelectricity and piezoelectricity in BaTiO3/PbTiO3 (0 1 1) superlattices

    Science.gov (United States)

    Lou, Yaoding; Deng, Junkai; Zhe Liu, Jefferson

    2018-04-01

    The structure, ferroelectricity (FE), and piezoelectricity of epitaxial BaTiO3/PbTiO3 (BTO/PTO) (0 1 1) superlattices are studied using density functional theory calculations. Our results show that compressive strain arising from the SrTiO3 (0 1 1) substrate stabilizes the (BTO) m /(PTO) n (0 1 1) superlattices in orthorhombic phase with the FE polarization along [0 1 1] direction. Tuning the BTO contents significantly changes the structural, ferroelectric and piezoelectric properties. The FE polarization of superlattices significantly drops with increasing BTO contents, which can be attributed to depolarization of the PTO layers. The averaged c/a ratio of the whole superlattices exhibits anomalous non-monotonic relation with respect to BTO contents. Interestingly, our results predict the (0 1 1) superlattices can enhance the piezoelectric coefficient e 33 with a maximum value at ~67% BTO concentration. This result suggests a potential avenue to design high performance piezoelectric materials with less Pb contents. In-depth analysis reveals the B-site Ti cation as the origin for the enhanced e 33 value, which implies the potential of B-site cation engineering in perovskite heterostructure designs.

  17. Strained superlattices and magnetic tunnel junctions based on doped manganites

    International Nuclear Information System (INIS)

    Yafeng Lu

    2001-01-01

    In the first part of this work the effect of biaxial strain on the structure and transport properties of doped manganites has been studied to explore the relevance of Jahn-Teller electron-lattice interaction for the CMR phenomenon in these materials. A series of high quality, coherently strained La 2/3 (Ca or Ba) 1/3 MnO 3 /SrTiO 3 superlattices with different modulation periods have been fabricated on (001) SrTiO 3 and NdGaO 3 substrates by laser molecular beam epitaxy. A detailed structural characterization was performed by high-angle X-ray diffraction (HAXRD) and low-angle X-ray reflectivity (LAXRR). The fabricated superlattices are very flat, show excellent structural coherence and very small mosaic spread (0.2 ∝0.03 ). The in-plane coherency strain could be varied by changing the thickness ratio of the constituent layers allowing for a systematic variation of the resulting lattice distortion of La 2/3 (Ca or Ba) 1/3 MnO 3 . By the in-plane coherency strain the out-of-plane lattice constant could be continuously adjusted by varying the relative thickness of the SrTiO 3 and La 2/3 (Ca or Ba) 1/3 MnO 3 layers: the c-axis lattice constant of La 2/3 Ba 1/3 MnO 3 was found to vary from 3.910 A to 3.975 A due to a compressive in-plane strain, whereas the c-axis constant of La 2/3 Ca 1/3 MnO 3 was found to change from 3.87 A to 3.79A due to tensile in-plane strain. The strain results in a biaxial distortion ε bi of La 2/3 (Ca or Ba) 1/3 MnO 3 that strongly affects the electrical transport properties and the magnetoresistance. Our measurements show that there is a clear correlation between ε bi and the temperature T p corresponding to the maximum in the resistivity versus temperature curves as well as the measured magnetoresistance in the two systems. In the second part of this work we have investigated the spin-dependent tunneling in trilayer structures of La 2/3 Ba 1/3 MnO 3 /SrTiO 3 /La 2/3 Ba 1/3 MnO 3 . (orig.)

  18. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  19. Development of Strained-Layer Superlattice (SLS) IR Detector Camera

    Data.gov (United States)

    National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

  20. Crystalline structure and XMCD studies of Co40Fe40B20 grown on Bi2Te3, BiTeI and Bi2Se3

    OpenAIRE

    Kaveev, A. K.; Sokolov, N. S.; Suturin, S. M.; Zhiltsov, N. S.; Golyashov, V. A.; Tereshchenko, O. E.; Prosvirin, I. P.; Kokh, K. A.; Sawada, M.

    2018-01-01

    Epitaxial films of Co40Fe40B20 (further - CoFeB) were grown on Bi2Te3(001) and Bi2Se3(001) substrates by laser molecular beam epitaxy (LMBE) technique at 200-400C. Bcc-type crystalline structure of CoFeB with (111) plane parallel to (001) plane of Bi2Te3 was observed, in contrast to polycrystalline CoFeB film formed on Bi2Se3(001) at RT using high-temperature seeding layer. Therefore, structurally ordered ferromagnetic thin films were obtained on the topological insulator surface for the firs...