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Sample records for superlattice infrared detectors

  1. ICP etching for InAs-based InAs/GaAsSb superlattice long wavelength infrared detectors

    Science.gov (United States)

    Huang, Min; Chen, Jianxin; Xu, Jiajia; Wang, Fangfang; Xu, Zhicheng; He, Li

    2018-05-01

    In this work, we study and report the dry etching processes for InAs-based InAs/GaAsSb strain-free superlattice long wavelength infrared (LWIR) detectors. The proper etching parameters were first obtained through the parametric studies of Inductively Coupled Plasma (ICP) etching of both InAs and GaSb bulk materials in Cl2/N2 plasmas. Then an InAs-based InAs/GaAsSb superlattice LWIR detector with PπN structure was fabricated by using the optimized etching parameters. At 80 K, the detector exhibits a 100% cut-off wavelength of 12 μm and a responsivity of 1.5 A/W. Moreover, the dark current density of the device under a bias of -200 mV reaches 5.5 × 10-4 A/cm2, and the R0A is 15 Ω cm2. Our results pave the way towards InAs-based superlattice LWIR detectors with better performances.

  2. Development of Strained-Layer Superlattice (SLS) IR Detector Camera

    Data.gov (United States)

    National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

  3. Development of Strained-Layer Superlattice (SLS) IR Detector Camera Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Strained Layer Superlattice (SLS) detectors are a new class of detectors which may be the next generation of band-gap engineered, large format infrared detector...

  4. Design of InAs/GaSb superlattice infrared barrier detectors

    Science.gov (United States)

    Delmas, M.; Rossignol, R.; Rodriguez, J. B.; Christol, P.

    2017-04-01

    Design of InAs/GaSb type-II superlattice (T2SL) infrared barrier detectors is theoretically investigated. Each part of the barrier structures is studied in order to achieve optimal device operation at 150 K and 77 K, in the midwave and longwave infrared domain, respectively. Whatever the spectral domain, nBp structure with a p-type absorbing zone and an n-type contact layer is found to be the most favourable detector architecture allowing a reduction of the dark-current associated with generation-recombination processes. The nBp structures are then compared to pin photodiodes. The MWIR nBp detector with 5 μm cut-off wavelength can operate up to 120 K, resulting in an improvement of 20 K on the operating temperature compared to the pin device. The dark-current density of the LWIR nBp device at 77 K is expected to be as low as 3.5 × 10-4 A/cm2 at 50 mV reverse bias, more than one decade lower than the usual T2SL photodiode. This result, for a device having cut-off wavelength at 12 μm, is at the state of the art compared to the well-known MCT 'rule 07'.

  5. InGaAs/InAlAs superlattice detector for THz radiation

    CERN Document Server

    Schomburg, E; Kratschmer, M; Vollnhals, A; Scheuerer, R; Renk, K F; Ustinov, V; Zhukov, A; Kovsh, A

    2002-01-01

    We report the use of an InGaAs/InAlAs superlattice for detection of THz radiation pulses generated by a free-electron-laser (FELIX). The detector showed a response corresponding to a reduction of the direct current through the superlattice. The current reduction is attributed to the THz-field induced modulation of Bloch oscillations performed by miniband electrons. The detector response was measured in a frequency range between 4 and 12 THz and showed strong minima at the frequencies of infrared active transverse optic phonons. (10 refs).

  6. InAs/GaSb type-II superlattice infrared detectors: three decades of development

    Science.gov (United States)

    Rogalski, A.; Kopytko, M.; Martyniuk, P.

    2017-02-01

    Recently, there has been considerable progress towards III-V antimonide-based low dimensional solids development and device design innovations. From a physics point of view, the type-II InAs/GaSb superlattice is an extremely attractive proposition. Their development results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe FPAs at reasonable cost and theoretical predictions of lower Auger recombination for type-II superlattice (T2SL) detectors compared to HgCdTe. Lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall lifetime are equal. Based on these promising results it is obvious now that the InAs/GaSb superlattice technology is competing with HgCdTe third generation detector technology with the potential advantage of standard III-V technology to be more competitive in costs and as a consequence series production pricing. Comments to the statement whether the superlattice IR photodetectors can outperform the "bulk" narrow gap HgCdTe detectors is one of the most important questions for the future of IR photodetectors presented by Rogalski at the April 2006 SPIE meeting in Orlando, Florida, are more credible today and are presented in this paper. It concerns the trade-offs between two most competing IR material technologies: InAs/GaSb type-II superlattices and HgCdTe ternary alloy system.

  7. Current responsivity of semiconductor superlattice THz-photon detectors

    DEFF Research Database (Denmark)

    Ignatov, Anatoly A.; Jauho, Antti-Pekka

    1999-01-01

    The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed for curr......The current responsivity of a semiconductor superlattice THz-photon detector is calculated using an equivalent circuit model which takes into account the finite matching efficiency between a detector antenna and the superlattice in the presence of parasitic losses. Calculations performed...... for currently available superlattice diodes show that both the magnitudes and the roll-off frequencies of the responsivity are strongly influenced by an excitation of hybrid plasma-Bloch oscillations which are found to be eigenmodes of the system in the THz-frequency band. The expected room temperature values...... of the responsivity (2–3 A/W in the 1–3 THz-frequency band) range up to several percents of the quantum efficiency e/[h-bar] omega of an ideal superconductor tunnel junction detector. Properly designed semiconductor superlattice detectors may thus demonstrate better room temperature THz-photon responsivity than...

  8. Growth and characterization of In1-xGaxAs/InAs0.65Sb0.35 strained layer superlattice infrared detectors

    Science.gov (United States)

    Ariyawansa, G.; Duran, J. M.; Reyner, C. J.; Steenbergen, E. H.; Yoon, N.; Wasserman, D.; Scheihing, J. E.

    2017-02-01

    Type-II strained layer superlattices (SLS) are an active research topic in the infrared detector community and applications for SLS detectors continue to grow. SLS detector technology has already reached the commercial market due to improvements in material quality, device design, and device fabrication. Despite this progress, the optimal superlattice design has not been established, and at various times has been believed to be InAs/GaSb, InAs/InGaSb, or InAs/InAsSb. Building on these, we investigate the properties of a new mid-wave infrared SLS material: InGaAs/InAsSb SLS. The ternary InGaAs/InAsSb SLS has three main advantages over other SLS designs: greater support for strain compensation, enhanced absorption due to increased electron-hole wavefunction overlap, and improved vertical hole mobility due to reduced hole effective mass. Here, we compare three ternary SLSs, with approximately the same bandgap (0.240 eV at 150 K), comprised of Ga fractions of 5%, 10%, and 20% to a reference sample with 0% Ga. Enhanced absorption is both theoretically predicted and experimentally realized. Furthermore, the characteristics of ternary SLS infrared detectors based on an nBn architecture are reported and exhibit nearly state-of-the-art dark current performance with minimal growth optimization. We report standard material and device characterization information, including dark current and external quantum efficiency, and provide further analysis that indicates improved quantum efficiency and vertical hole mobility. Finally, a 320×256 focal plane array built based on the In0.8Ga0.2As/InAs0.65Sb0.35 SLS design is demonstrated with promising performance.

  9. MSM optical detector on the basis of II-type ZnSe/ZnTe superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Kuznetzov, P. I., E-mail: pik218@ire216.msk.su; Averin, S. V., E-mail: sva278@ire216.msk.su; Zhitov, V. A.; Zakharov, L. Yu.; Kotov, V. M. [Russian Academy of Sciences, Kotel’nikov Institute of Radioengineering and Electronics (Fryazino Branch) (Russian Federation)

    2017-02-15

    On the basis of a type-II ZnSe/ZnTe superlattice, a MSM (metal—semiconductor–metal) photodetector is fabricated and investigated. The detector features low dark currents and a high sensitivity. The spectral characteristic of the detector provides the possibility of the selective detection of three separate spectral portions of visible and near-infrared radiation.

  10. Recent progress in infrared detector technologies

    Science.gov (United States)

    Rogalski, A.

    2011-05-01

    In the paper, fundamental and technological issues associated with the development and exploitation of the most advanced infrared detector technologies are discussed. In this class of detectors both photon and thermal detectors are considered. Special attention is directed to HgCdTe ternary alloys on silicon, type-II superlattices, uncooled thermal bolometers, and novel uncooled micromechanical cantilever detectors. Despite serious competition from alternative technologies and slower progress than expected, HgCdTe is unlikely to be seriously challenged for high-performance applications, applications requiring multispectral capability and fast response. However, the nonuniformity is a serious problem in the case of LWIR and VLWIR HgCdTe detectors. In this context, it is predicted that type-II superlattice system seems to be an alternative to HgCdTe in long wavelength spectral region. In well established uncooled imaging, microbolometer arrays are clearly the most used technology. Present state-of-the-art microbolometers are based on polycrystalline or amorphous materials, typically vanadium oxide (VO x) or amorphous silicon (α-Si), with only modest temperature sensitivity and noise properties. Basic efforts today are mainly focused on pixel reduction and performance enhancement. Attractive alternatives consist of low-resistance α-SiGe monocrystalline SiGe quantum wells or quantum dots. In spite of successful commercialization of uncooled microbolometers, the infrared community is still searching for a platform for thermal imagers that combine affordability, convenience of operation, and excellent performance. Recent advances in MEMS systems have lead to the development of uncooled IR detectors operating as micromechanical thermal detectors. Between them the most important are biomaterial microcantilevers.

  11. InAs/GaSb type-II superlattice infrared detectors: Future prospect

    Science.gov (United States)

    Rogalski, A.; Martyniuk, P.; Kopytko, M.

    2017-09-01

    Investigations of antimonide-based materials began at about the same time as HgCdTe ternary alloys—in the 1950s, and the apparent rapid success of their technology, especially low-dimensional solids, depends on the previous five decades of III-V materials and device research. However, the sophisticated physics associated with the antimonide-based bandgap engineering concept started at the beginning of 1990s gave a new impact and interest in development of infrared detector structures within academic and national laboratories. The development of InAs/GaSb type-II superlattices (T2SLs) results from two primary motivations: the perceived challenges of reproducibly fabricating high-operability HgCdTe focal plane arrays (FPAs) at reasonable cost and the theoretical predictions of lower Auger recombination for type T2SL detectors compared with HgCdTe. Second motivation—lower Auger recombination should be translated into a fundamental advantage for T2SL over HgCdTe in terms of lower dark current and/or higher operating temperature, provided other parameters such as Shockley-Read-Hall (SRH) lifetime are equal. InAs/GaSb T2SL photodetectors offer similar performance to HgCdTe at an equivalent cut-off wavelength, but with a sizeable penalty in operating temperature, due to the inherent difference in SRH lifetimes. It is predicted that since the future infrared (IR) systems will be based on the room temperature operation of depletion-current limited arrays with pixel densities that are fully consistent with background- and diffraction-limited performance due to the system optics, the material system with long SRH lifetime will be required. Since T2SLs are very much resisted in attempts to improve its SRH lifetime, currently the only material that meets this requirement is HgCdTe. Due to less ionic chemical bonding, III-V semiconductors are more robust than their II-VI counterparts. As a result, III-V-based FPAs excel in operability, spatial uniformity, temporal stability

  12. Structural and electrical properties of InAs/GaSb superlattices grown by metalorganic vapor phase epitaxy for midwavelength infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Arikata, Suguru; Kyono, Takashi [Semiconductor Technologies Laboratory, Sumitomo Electric Industries, LTD., Hyogo (Japan); Miura, Kouhei; Balasekaran, Sundararajan; Inada, Hiroshi; Iguchi, Yasuhiro [Transmission Devices Laboratory, Sumitomo Electric Industries, LTD., Yokohama (Japan); Sakai, Michito [Sensor System Research Group, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Katayama, Haruyoshi [Space Technology Directorate I, Japan Aerospace Exploration Agency (JAXA), Tsukuba, Ibaraki (Japan); Kimata, Masafumi [College of Science and Engineering, Ritsumeikan University, Shiga (Japan); Akita, Katsushi [Sumiden Semiconductor Materials, LTD., Hyogo (Japan)

    2017-03-15

    InAs/GaSb superlattice (SL) structures were fabricated on GaSb substrates by metalorganic vapor phase epitaxy (MOVPE) toward midwavelength infrared (MWIR) photodiodes. Almost defect-free 200-period SLs with a strain-compensation interfacial layer were successfully fabricated and demonstrate an intense photoluminescence peak centered at 6.1 μm at 4 K and an external quantum efficiency of 31% at 3.5 μm at 20 K. These results indicate that the high-performance MWIR detectors can be fabricated in application with the InAs/GaSb SLs grown by MOVPE as an attractive method for production. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  13. Superlattice electroabsorption radiation detector

    International Nuclear Information System (INIS)

    Cooke, B.J.

    1993-06-01

    This paper provides a preliminary investigation of a new class of superlattice electroabsorption radiation detectors that employ direct optical modulation for high-speed, two-dimensional (2-D), high-resolution imaging. Applications for the detector include nuclear radiation measurements, tactical guidance and detection (laser radar), inertial fusion plasma studies, and satellite-based sensors. Initial calculations discussed in this paper indicate that a 1.5-μm (GaAlAs) multi-quantum-well (MQW) Fabry-Perot detector can respond directly to radiation of energies 1 eV to 10 KeV, and indirectly (with scattering targets) up through gamma, with 2-D sample rates on the order of 20 ps

  14. Progress towards vertical transport study of proton-irradiated InAs/GaSb type-II strained-layer superlattice materials for space-based infrared detectors using magnetoresistance measurements

    Science.gov (United States)

    Malone, Mitchell C.; Morath, Christian P.; Fahey, Stephen; Klein, Brianna; Cowan, Vincent M.; Krishna, Sanjay

    2015-09-01

    InAs/GaSb type-II strained-layer superlattice (T2SLS) materials are being considered for space-based infrared detector applications. However, an inadequate understanding of the role of carrier transport, specifically the vertical mobility, in the radiation tolerance of T2SLS detectors remains. Here, progress towards a vertical transport study of proton-irradiated, p-type InAs/GaSb T2SLS materials using magnetoresistance measurements is reported. Measurements in the growth direction of square mesas formed from InAs/GaSb superlattice material were performed using two distinct contact geometries in a Kelvin mode setup at variable magnetic fields, ranging from -9 T to 9 T, and temperatures, ranging from 5 K and 300 K. The results here suggested multi-carrier conduction and a field-dependent series resistance from the contact layer were present. The implications of these results and the plans for future magnetoresistance measurements on proton-irradiated T2SLS materials are discussed.

  15. Ultra-thin infrared metamaterial detector for multicolor imaging applications.

    Science.gov (United States)

    Montoya, John A; Tian, Zhao-Bing; Krishna, Sanjay; Padilla, Willie J

    2017-09-18

    The next generation of infrared imaging systems requires control of fundamental electromagnetic processes - absorption, polarization, spectral bandwidth - at the pixel level to acquire desirable information about the environment with low system latency. Metamaterial absorbers have sparked interest in the infrared imaging community for their ability to enhance absorption of incoming radiation with color, polarization and/or phase information. However, most metamaterial-based sensors fail to focus incoming radiation into the active region of a ultra-thin detecting element, thus achieving poor detection metrics. Here our multifunctional metamaterial absorber is directly integrated with a novel mid-wave infrared (MWIR) and long-wave infrared (LWIR) detector with an ultra-thin (~λ/15) InAs/GaSb Type-II superlattice (T2SL) interband cascade detector. The deep sub-wavelength metamaterial detector architecture proposed and demonstrated here, thus significantly improves the detection quantum efficiency (QE) and absorption of incoming radiation in a regime typically dominated by Fabry-Perot etalons. Our work evinces the ability of multifunctional metamaterials to realize efficient wavelength selective detection across the infrared spectrum for enhanced multispectral infrared imaging applications.

  16. Modified electron beam induced current technique for in(Ga)As/InAsSb superlattice infrared detectors

    Science.gov (United States)

    Yoon, N.; Reyner, C. J.; Ariyawansa, G.; Duran, J. M.; Scheihing, J. E.; Mabon, J.; Wasserman, D.

    2017-08-01

    Electron beam induced current (EBIC) measurements provide a powerful tool for characterizing semiconductor based materials and devices. By measuring the current generated by the electron beam of a scanning electron microscope (SEM), EBIC allows us to extract the minority carrier diffusion length (L) and the surface recombination velocity to diffusivity ratio (S/D) of a material. When combined with information on minority carrier lifetime (τ), for instance from time-resolved photoluminescence measurements, the minority carrier mobility of the material can be extracted. However, the EBIC technique relies heavily on the accurate modeling of the carrier generation and collection process. Traditionally, this was achieved using a combination of empirical analytical expressions (and later Monte Carlo simulations) for carrier generation and analytical diffusion/recombination expressions for carrier collection. This approach introduces significant uncertainties into the extracted material parameters. Here, we present a numerical approach to EBIC modeling which improves the spatial resolution of our model, while also retaining information regarding the relative EBIC signal as a function of incident beam energies and currents. We apply this technique to investigate the temperature dependent minority carrier mobility of InAs/InAsSb and InGaAs/InAsSb strained layer superlattice infrared detectors and compare our results to the values obtained using external quantum efficiency measurements of the same samples. Our approach not only allows for an improvement in the uncertainty of the extracted material parameters, but also offers insight into the material and device behavior as a function of nonequilibrium carrier concentration. The technique presented here offers potentially improved characterization of not only infrared detectors, but a range of semiconductor-based devices.

  17. Type II superlattice technology for LWIR detectors

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

    2016-05-01

    SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

  18. Broadband mid-infrared superlattice light-emitting diodes

    Science.gov (United States)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  19. The 640 × 512 LWIR type-II superlattice detectors operating at 110 K

    Science.gov (United States)

    Tan, Bi-Song; Zhang, Chuan-Jie; Zhou, Wen-Hong; Yang, Xiao-Jie; Wang, Guo-Wei; Li, Yun-Tao; Ding, Yan-Yan; Zhang, Zhou; Lei, Hua-Wei; Liu, Wei-Hua; Du, Yu; Zhang, Li-Fang; Liu, Bin; Wang, Li-Bao; Huang, Li

    2018-03-01

    The type-II InAs/GaSb superlattices (T2SLs)-based 640 × 512 long wavelength infrared (LWIR) Focal Plane Array (FPA) detector with15 μm pitch and 50% cut-off wavelength of 10.5 μm demonstrates a peak quantum efficiency of 38.6% and peak detectivity of 1.65 × 1011 cm Hz1/2 W-1 at 8.1 μm, high pixel operability of 99.5% and low responsivity non-uniformity of 2.69% at 80 K. The FPA exhibits clear infrared imaging at 110 K and diffusion-limited dark current densities below Tennant's 'Rule07' at temperature above 100 K, which is attributed to the efficient suppression of diffusion dark current and surface leak current by introducing M-structure barrier and double hetero-structure passivation layers.

  20. Modelling of current-voltage characteristics of infrared photo-detectors based on type – II InAs/GaSb super-lattice diodes with unipolar blocking layers

    Directory of Open Access Journals (Sweden)

    Vishnu Gopal

    2015-09-01

    Full Text Available It is shown that current-voltage characteristics of infrared photo-detectors based on type-II InAs/GaSb super-lattices with uni-polar blocking layers can be modelled similar to a junction diode with a finite series resistance on account of blocking barriers. As an example this paper presents the results of a study of current-voltage characteristics of a type II InAs/GaSb super-lattice diode with PbIbN architecture using a recently proposed [J. Appl. Phys. 116, 084502 (2014] method for modelling of illuminated photovoltaic detectors. The thermal diffusion, generation – recombination (g-r, and ohmic currents are found as principal components besides a component of photocurrent due to background illumination. The experimentally observed reverse bias diode current in excess of thermal current (diffusion + g-r, photo-current and ohmic shunt current is reported to be best described by an exponential function of the type, Iexcess = Ir0 + K1exp(K2 V, where Ir0, K1 and K2 are fitting parameters and V is the applied bias voltage. The present investigations suggest that the exponential growth of excess current with the applied bias voltage may be taking place along the localized regions in the diode. These localized regions are the shunt resistance paths on account of the surface leakage currents and/or defects and dislocations in the base of the diode.

  1. Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

    Energy Technology Data Exchange (ETDEWEB)

    Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.; Dahiya, V.; Cavallo, F. [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); Myers, S. [SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States); Krishna, S., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu [Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States); SKINfrared, LLC, Lobo Venture Lab, 801 University Blvd., Suite 10, Albuquerque, New Mexico 87106 (United States)

    2016-02-29

    We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface between the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.

  2. Measurements of Low Frequency Noise of Infrared Photo-Detectors with Transimpedance Detection System

    Directory of Open Access Journals (Sweden)

    Ciura Łukasz

    2014-08-01

    Full Text Available The paper presents the method and results of low-frequency noise measurements of modern mid-wavelength infrared photodetectors. A type-II InAs/GaSb superlattice based detector with nBn barrier architecture is compared with a high operating temperature (HOT heterojunction HgCdTe detector. All experiments were made in the range 1 Hz - 10 kHz at various temperatures by using a transimpedance detection system, which is examined in detail. The power spectral density of the nBn’s dark current noise includes Lorentzians with different time constants while the HgCdTe photodiode has more uniform 1/f - shaped spectra. For small bias, the low-frequency noise power spectra of both devices were found to scale linearly with bias voltage squared and were connected with the fluctuations of the leakage resistance. Leakage resistance noise defines the lower noise limit of a photodetector. Other dark current components give raise to the increase of low-frequency noise above this limit. For the same voltage biasing devices, the absolute noise power densities at 1 Hz in nBn are 1 to 2 orders of magnitude lower than in a MCT HgCdTe detector. In spite of this, low-frequency performance of the HgCdTe detector at ~ 230K is still better than that of InAs/GaSb superlattice nBn detector.

  3. Innovative mid-infrared detector concepts

    Science.gov (United States)

    Höfling, Sven; Pfenning, Andreas; Weih, Robert; Ratajczak, Albert; Hartmann, Fabian; Knebl, Georg; Kamp, Martin; Worschech, Lukas

    2016-09-01

    Gas sensing is a key technology with applications in various industrial, medical and environmental areas. Optical detection mechanisms allow for a highly selective, contactless and fast detection. For this purpose, rotational-vibrational absorption bands within the mid infrared (MIR) spectral region are exploited and probed with appropriate light sources. During the past years, the development of novel laser concepts such as interband cascade lasers (ICLs) and quantum cascade lasers (QCLs) has driven a continuous optimization of MIR laser sources. On the other hand side, there has been relatively little progress on detectors in this wavelength range. Here, we study two novel and promising GaSb-based detector concepts: Interband cascade detectors (ICD) and resonant tunneling diode (RTD) photodetectors. ICDs are a promising approach towards highly sensitive room temperature detection of MIR radiation. They make use of the cascading scheme that is enabled by the broken gap alignment of the two binaries GaSb and InAs. The interband transition in GaSb/InAs-superlattices (SL) allows for normal incidence detection. The cut-off wavelength, which determines the low energy detection limit, can be engineered via the SL period. RTD photodetectors act as low noise and high speed amplifiers of small optically generated electrical signals. In contrast to avalanche photodiodes, where the gain originates from multiplication due to impact ionization, in RTD photodetectors a large tunneling current is modulated via Coulomb interaction by the presence of photogenerated minority charge carriers. For both detector concepts, first devices operational at room temperature have been realized.

  4. History of infrared detectors

    Science.gov (United States)

    Rogalski, A.

    2012-09-01

    This paper overviews the history of infrared detector materials starting with Herschel's experiment with thermometer on February 11th, 1800. Infrared detectors are in general used to detect, image, and measure patterns of the thermal heat radiation which all objects emit. At the beginning, their development was connected with thermal detectors, such as thermocouples and bolometers, which are still used today and which are generally sensitive to all infrared wavelengths and operate at room temperature. The second kind of detectors, called the photon detectors, was mainly developed during the 20th Century to improve sensitivity and response time. These detectors have been extensively developed since the 1940's. Lead sulphide (PbS) was the first practical IR detector with sensitivity to infrared wavelengths up to ˜3 μm. After World War II infrared detector technology development was and continues to be primarily driven by military applications. Discovery of variable band gap HgCdTe ternary alloy by Lawson and co-workers in 1959 opened a new area in IR detector technology and has provided an unprecedented degree of freedom in infrared detector design. Many of these advances were transferred to IR astronomy from Departments of Defence research. Later on civilian applications of infrared technology are frequently called "dual-use technology applications." One should point out the growing utilisation of IR technologies in the civilian sphere based on the use of new materials and technologies, as well as the noticeable price decrease in these high cost technologies. In the last four decades different types of detectors are combined with electronic readouts to make detector focal plane arrays (FPAs). Development in FPA technology has revolutionized infrared imaging. Progress in integrated circuit design and fabrication techniques has resulted in continued rapid growth in the size and performance of these solid state arrays.

  5. High-operating temperature MWIR photon detectors based on type II InAs/GaSb superlattice

    Science.gov (United States)

    Razeghi, Manijeh; Nguyen, Binh-Minh; Delaunay, Pierre-Yves; Abdollahi Pour, Siamak; Huang, Edward Kwei-wei; Manukar, Paritosh; Bogdanov, Simeon; Chen, Guanxi

    2010-01-01

    Recent efforts have been paid to elevate the operating temperature of Type II InAs/GaSb superlattice Mid Infrared photon detectors. Optimized growth parameters and interface engineering technique enable high quality material with a quantum efficiency above 50%. Intensive study on device architecture and doping profile has resulted in almost one order of magnitude of improvement to the electrical performance and lifted up the 300K-background BLIP operation temperature to 166K. At 77K, the ~4.2 μm cut-off devices exhibit a differential resistance area product in excess of the measurement system limit (106 Ohm.cm2) and a detectivity of 3x1013cm.Hz1/2/W. High quality focal plane arrays were demonstrated with a noise equivalent temperature of 10mK at 77K. Uncooled camera is capable to capture hot objects such as soldering iron.

  6. Advances in the characterization of InAs/GaSb superlattice infrared photodetectors

    Science.gov (United States)

    Wörl, A.; Daumer, V.; Hugger, T.; Kohn, N.; Luppold, W.; Müller, R.; Niemasz, J.; Rehm, R.; Rutz, F.; Schmidt, J.; Schmitz, J.; Stadelmann, T.; Wauro, M.

    2016-10-01

    This paper reports on advances in the electro-optical characterization of InAs/GaSb short-period superlattice infrared photodetectors with cut-off wavelengths in the mid-wavelength and long-wavelength infrared ranges. To facilitate in-line monitoring of the electro-optical device performance at different processing stages we have integrated a semi-automated cryogenic wafer prober in our process line. The prober is configured for measuring current-voltage characteristics of individual photodiodes at 77 K. We employ it to compile a spatial map of the dark current density of a superlattice sample with a cut-off wavelength around 5 μm patterned into a regular array of 1760 quadratic mesa diodes with a pitch of 370 μm and side lengths varying from 60 to 350 μm. The different perimeter-to-area ratios make it possible to separate bulk current from sidewall current contributions. We find a sidewall contribution to the dark current of 1.2×10-11 A/cm and a corrected bulk dark current density of 1.1×10-7 A/cm2, both at 200 mV reverse bias voltage. An automated data analysis framework can extract bulk and sidewall current contributions for various subsets of the test device grid. With a suitable periodic arrangement of test diode sizes, the spatial distribution of the individual contributions can thus be investigated. We found a relatively homogeneous distribution of both bulk dark current density and sidewall current contribution across the sample. With the help of an improved capacitance-voltage measurement setup developed to complement this technique a residual carrier concentration of 1.3×1015 cm-3 is obtained. The work is motivated by research into high performance superlattice array sensors with demanding processing requirements. A novel long-wavelength infrared imager based on a heterojunction concept is presented as an example for this work. It achieves a noise equivalent temperature difference below 30 mK for realistic operating conditions.

  7. Hydrogenation of Very Long Wavelength Infrared Focal Plane Arrays Based on Type II Superlattices, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose to advance the Ga-free InAs/InAsSb type II superlattice (T2SL) materials technology for very long wavelength infrared (VLWIR) focal plane arrays (FPAs) by...

  8. Extraction of minority carrier diffusion length of MWIR Type-II superlattice nBp detector

    Science.gov (United States)

    Taghipour, Zahra; Kazemi, Alireza; Myers, Stephen; Wijewarnasuriya, Priyalal; Mathews, Sen; Steenbergen, Elizabeth H.; Morath, Christian; Cowan, Vincent M.; Ariyawansa, Gamini; Scheihing, John; Krishna, Sanjay

    2017-08-01

    We present a model for the spectral external quantum efficiency (EQE) to extract the minority carrier diffusion length (Ln) of a unipolar nBp InAs/GaSb Type-II superlattice (T2SL) mid-wave infrared (MWIR) detector. The detector consists of a 4 μm thick p-doped 10ML InAs/10ML GaSb SL absorber with a 50% cut-off wavelength of 5 μm at 80 K and zero bias. The n-type doped InAs/AlSb SL barrier in the structure was included to reduce the GR dark current. By fitting the experimentally measured EQE data to the theoretically calculated QE based on the solution of the drift-diffusion equation, the p-type absorber was found the have Ln = 10 +/- 0.5 μm at 80K, and Ln = 12 +/- 0.5 μm at 120K and 150K. We performed the absorption coefficient measurement at different temperatures of interest. Also, we estimated the reduced background concentration and the built-in potential by utilizing a capacitance-voltage measurement technique. We used time-resolved-photoluminescence (TRPL) to determine the lifetime at 80K. With the result of the model and the lifetime measurement, we calculated the diffusion coefficient and the mobility in the T2SL detector at various temperatures. Also, we studied the behavior of different dark current mechanisms by fitting the experimentally measured and simulated dark current density under different operating temperatures and biases.

  9. Modelling and measurement of bandgap behaviour in medium-wavelength IR InAs/InAs0.815Sb0.185 strained-layer superlattices

    Science.gov (United States)

    Letka, Veronica; Keen, James; Craig, Adam; Marshall, Andrew R. J.

    2017-10-01

    InAs/InAs1-xSbx type-II strained-layer superlattices (SLS) are a structure with potential infrared detection applications, owing to its tunable bandgap and suppressed Auger recombination. A series of medium-wavelength infrared (MWIR) InAs/InAs0.815Sb0.185 SLS structures, grown as undoped absorption epilayers on GaAs, were fabricated using molecular beam epitaxy in order to study the dependence of the ground state transitions on temperature and superlattice period thickness. Photoluminescence peaks at 4 K were obtained with the use of a helium-cooled micro-PL system and an InSb detector, and temperature-dependent absorption spectra were measured in the range 77 K - 300 K on a Fourier Transform Infrared (FTIR) spectrometer, equipped with a 1370 K blackbody source and a DTGS detector. An nBn device sample with the absorber structure identical to one of the undoped samples was also grown and processed with the goal of measuring temperature-dependent spectral response. A model for superlattice band alignment was also devised, incorporating the Bir-Pikus transformation results for uniaxial and biaxial strain, and the Einstein oscillator model for bandgap temperature dependence. Absorption coefficients of several 1000 cm-1 throughout the entire MWIR range are found for all samples, and temperature dependence of the bandgaps is extracted and compared to the model. This and photoluminescence data also demonstrate bandgap shifts consistent with the different superlattice periods of the three samples.

  10. Radiometric characterization of type-II InAs/GaSb superlattice (t2sl) midwave infrared photodetectors and focal plane arrays

    Science.gov (United States)

    Nghiem, Jean; Giard, E.; Delmas, M.; Rodriguez, J. B.; Christol, P.; Caes, M.; Martijn, H.; Costard, E.; Ribet-Mohamed, I.

    2017-09-01

    In recent years, Type-II InAs/GaSb superlattice (T2SL) has emerged as a new material technology suitable for high performance infrared (IR) detectors operating from Near InfraRed (NIR, 2-3μm) to Very Long Wavelength InfraRed (LWIR, λ > 15μm) wavelength domains. To compare their performances with well-established IR technologies such as MCT, InSb or QWIP cooled detectors, specific electrical and radiometric characterizations are needed: dark current, spectral response, quantum efficiency, temporal and spatial noises, stability… In this paper, we first present quantum efficiency measurements performed on T2SL MWIR (3-5μm) photodiodes and on one focal plane array (320x256 pixels with 30μm pitch, realized in the scope of a french collaboration ). Different T2SL structures (InAs-rich versus GaSb-rich) with the same cutoff wavelength (λc= 5μm at 80K) were studied. Results are analysed in term of carrier diffusion length in order to define the optimum thickness and type of doping of the absorbing zone. We then focus on the stability over time of a commercial T2SL FPA (320x256 pixels with 30μm pitch), measuring the commonly used residual fixed pattern noise (RFPN) figure of merit. Results are excellent, with a very stable behaviour over more than 3 weeks, and less than 10 flickering pixels, possibly giving access to long-term stability of IR absolute calibration.

  11. Barrier Infrared Detector (BIRD)

    Data.gov (United States)

    National Aeronautics and Space Administration — A recent breakthrough in MWIR detector design, has resulted in a high operating temperature (HOT) barrier infrared detector (BIRD) that is capable of spectral...

  12. Single-Band and Dual-Band Infrared Detectors

    Science.gov (United States)

    Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

    2017-01-01

    Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

  13. Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

    Science.gov (United States)

    Christol, P.; Rodriguez, J.-B.

    2017-11-01

    Infrared photodetectors based on type-II InAs/GaSb superlattice (T2SL) material has been given a lot of attention this past decade, in particular by U.S. laboratories. Among the advantages of this material system, one can cite the possibility to span a large Infrared (IR) range (3μm to 30 μm) by tailoring the band-gap independently from the lattice constant, allowing addressing many applications by the same fabrication process and the realization of multi-color IR sensors for high performance imaging systems. Recently, the maturity of the growth of the quantum structure by molecular beam epitaxy (MBE) and progress on the processing resulted in the demonstration of high-performance mega-pixel focal plane arrays (FPA) in both the mid-wavelength (MWIR) and the long-wavelength (LWIR) infrared spectral bands [1]. Consequently, InAs/GaSb T2SL photodetector can be now considered as a new infrared technology which can be complementary to InSb, MCT or QWIPs technologies. After some reminders on InAs/GaSb T2SL quantum structure properties, we present in this communication the results obtained by the IES laboratory, from Montpellier University, France, for photodiodes operating in the MWIR spectral domains. We then complete the paper by the main results reached by others laboratories for T2SL detectors operating from MWIR to VLWIR spectral ranges.

  14. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Li, Yuan, E-mail: liyuan12@semi.ac.cn; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai, E-mail: yhchen@semi.ac.cn [Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China); Niu, Zhichuan; Xiang, Wei; Hao, Hongyue [The State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing (China)

    2015-05-11

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed.

  15. Observation of interface dependent spin polarized photocurrents in InAs/GaSb superlattice

    International Nuclear Information System (INIS)

    Li, Yuan; Liu, Yu; Zhu, Laipan; Qin, Xudong; Wu, Qing; Huang, Wei; Chen, Yonghai; Niu, Zhichuan; Xiang, Wei; Hao, Hongyue

    2015-01-01

    In this letter, we investigated the spin polarized photocurrents excited by mid-infrared radiation and near-infrared radiation, respectively, in InAs/GaSb type II superlattices with different kinds of interfaces. By periodically varying the polarization state of the radiation, we analyzed Rashba-type and Dresselhaus-type spin polarized photocurrents, which present different features depending on the interface types and excitation conditions. Under mid-infrared excitation, the ratio of Rashba-type and Dresselhaus-type spin polarized photocurrents of the superlattice with InSb-like interface is obviously larger than that of the superlattice with GaAs-like interface, the ratio of the superlattice with alternate interface is in the middle. Whereas under near-infrared excitation, the ratios of the three superlattices are nearly the same. Further researches reveal the synactic effects of interface dependent strain and asymmetric interface potential on the spin splitting. Besides, the polarized Raman spectroscopies of these structures were also analyzed

  16. Infrared spectroscopy of strained BaTiO.sub.3./sub./SrTiO.sub.3./sub. superlattices on scandate substrates

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Soukiassian, A.; Xi, X.X.; Schlom, G.

    2014-01-01

    Roč. 87, 10-11 (2014), s. 929-937 ISSN 0141-1594 Institutional support: RVO:68378271 Keywords : infrared spectroscopy * ferroelectric superlattices * perovskites Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.954, year: 2014

  17. Mid-wavelength infrared unipolar nBp superlattice photodetector

    Science.gov (United States)

    Kazemi, Alireza; Myers, Stephen; Taghipour, Zahra; Mathews, Sen; Schuler-Sandy, Ted; Lee, Seunghyun; Cowan, Vincent M.; Garduno, Eli; Steenbergen, Elizabeth; Morath, Christian; Ariyawansa, Gamini; Scheihing, John; Krishna, Sanjay

    2018-01-01

    We report a Mid-Wavelength Infrared (MWIR) barrier photodetector based on the InAs/GaSb/AlSb type-II superlattice (T2SL) material system. The nBp design consists of a single unipolar barrier (InAs/AlSb SL) placed between a 4 μm thick p-doped absorber (InAs/GaSb SL) and an n-type contact layer (InAs/GaSb SL). At 80 K, the device exhibited a 50% cut-off wavelength of 5 μm, was fully turned-ON at zero bias and the measured QE was 50% (front side illumination with no AR coating) at 4.5 μm with a dark current density of 4.7 × 10-6 A/cm2 at Vb = 50 mV. At 150 K and Vb = 50 mV, the 50% cut-off wavelength increased to 5.3 μm, and the QE was 54% at 4.5 μm with a dark current of 5.0 × 10-4 A/cm2.

  18. Germanium blocked impurity band far infrared detectors

    International Nuclear Information System (INIS)

    Rossington, C.S.

    1988-04-01

    The infrared portion of the electromagnetic spectrum has been of interest to scientist since the eighteenth century when Sir William Herschel discovered the infrared as he measured temperatures in the sun's spectrum and found that there was energy beyond the red. In the late nineteenth century, Thomas Edison established himself as the first infrared astronomer to look beyond the solar system when he observed the star Arcturus in the infrared. Significant advances in infrared technology and physics, long since Edison's time, have resulted in many scientific developments, such as the Infrared Astronomy Satellite (IRAS) which was launched in 1983, semiconductor infrared detectors for materials characterization, military equipment such as night-vision goggles and infrared surveillance equipment. It is now planned that cooled semiconductor infrared detectors will play a major role in the ''Star Wars'' nuclear defense scheme proposed by the Reagan administration

  19. Infrared spectroscopy of nanoscopic epitaxial BaTiO.sub.3./sub./SrTiO.sub.3./sub. superlattices

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Soukiassian, A.; Xi, X.X.; Schlom, D. G.; Hlinka, Jiří; Kadlec, Christelle; Nakhmanson, S.M.

    2012-01-01

    Roč. 134, APR (2012), s. 146-148 ISSN 1058-4587 R&D Projects: GA MŠk ME08109; GA ČR(CZ) GAP204/11/1011 Institutional research plan: CEZ:AV0Z10100520 Keywords : infrared spectroscopy * ferroelectric superlattice Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.375, year: 2012 http://dx.doi.org/10.1080/10584587.2012.677590

  20. Small-pixel long wavelength infrared focal plane arrays based on InAs/GaSb Type-II superlattice

    Science.gov (United States)

    Han, Xi; Jiang, Dongwei; Wang, Guowei; Hao, Hongyue; Sun, Yaoyao; Jiang, Zhi; Lv, Yuexi; Guo, Chunyan; Xu, Yingqiang; Niu, Zhichuan

    2018-03-01

    The paper reports a 640 × 512 long wavelength infrared focal plane arrays (FPAs) with 15 × 15 μm2 pixels pitch based on the type II InAs/GaSb superlattice. Material grown on a 3 in. GaSb substrate exhibits a 50% cutoff wavelength of 10.2 μm across the entire wafer. The peak quantum efficiency of the detector reaches 28% at 9.1 μm without anti-reflecting coating. Maximal resistance-area products of 8.95 Ω·cm2 at 77 K and 24.4 Ω·cm2 at 45 K are achieved in a single element device indicating that the generation-recombination and tunneling mechanisms dominate the device dark current, respectively. The peak Johnson Detectivity reaches 9.66 × 1011 cm Hz1/2/W at 9.1 μm with the bias voltage of 80 mV. In the whole zone, the operability and non-uniformity for the responsivity are 97.74% and 6.41% respectively. The average noise equivalent temperature difference of 31.9 mK at 77 K is achieved with an integration time of 0.5 ms, a 300 K background and f/2 optics.

  1. Ultralow noise midwave infrared InAs-GaSb strain layer superlattice avalanche photodiode

    International Nuclear Information System (INIS)

    Mallick, Shubhrangshu; Banerjee, Koushik; Ghosh, Siddhartha; Plis, Elena; Rodriguez, Jean Baptiste; Krishna, Sanjay; Grein, Christoph

    2007-01-01

    Eye-safe midwavelength infrared InAs-GaSb strain layer superlattice p + -n - -n homojunction avalanche photodiodes (APDs) grown by solid source molecular beam epitaxy were fabricated and characterized. Maximum multiplication gain of 1800 was measured at -20 V at 77 K. Excess noise factors between 0.8 and 1.2 were measured up to gain of 300. Gain of 200 was measured at 120 K. Exponential nature of the gain as a function of reverse bias along with low excess noise factor at higher gain confirms single carrier electron-only impact ionization in the avalanche regime. Decrease in the multiplication gain at higher temperatures correlates with standard APD characteristics

  2. Modulation Transfer Function of Infrared Focal Plane Arrays

    Science.gov (United States)

    Gunapala, S. D.; Rafol, S. B.; Ting, D. Z.; Soibel, A.; Hill, C. J.; Khoshakhlagh, A.; Liu, J. K.; Mumolo, J. M.; Hoglund, L.; Luong, E. M.

    2015-01-01

    Modulation transfer function (MTF) is the ability of an imaging system to faithfully image a given object. The MTF of an imaging system quantifies the ability of the system to resolve or transfer spatial frequencies. In this presentation we will discuss the detail MTF measurements of 1024x1024 pixels mid -wavelength and long- wavelength quantum well infrared photodetector, and 320x256 pixels long- wavelength InAs/GaSb superlattice infrared focal plane arrays (FPAs). Long wavelength Complementary Barrier Infrared Detector (CBIRD) based on InAs/GaSb superlattice material is hybridized to recently designed and fabricated 320x256 pixel format ROIC. The n-type CBIRD was characterized in terms of performance and thermal stability. The experimentally measured NE delta T of the 8.8 micron cutoff n-CBIRD FPA was 18.6 mK with 300 K background and f/2 cold stop at 78K FPA operating temperature. The horizontal and vertical MTFs of this pixel fully delineated CBIRD FPA at Nyquist frequency are 49% and 52%, respectively.

  3. InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection

    Science.gov (United States)

    Uliel, Y.; Cohen-Elias, D.; Sicron, N.; Grimberg, I.; Snapi, N.; Paltiel, Y.; Katz, M.

    2017-08-01

    Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff of InGaAs- based detectors (1.7-2.5 μm) are required for both defense and civil applications. Type II Super-Lattices (T2SL) were recently proposed For near- room temperature SWIR detection as a possible system enabling bandgap adjustment in the required range. The work presented here focuses on a T2SL with alternating nano-layers of InGaAs and GaAsSb lattice-matched to an InP substrate. A near room temperature SWIR cutoff of 2.4 μm was measured. Electrical junctions were realized using Zn diffusion p-doping process. We realized and studied both mesa- and selective diffusion- based p-i-n photodiodes. Dark currents of mesa-based devices were 1.5 mA/cm2 and 32 μA/cm2 at 300 and 230 K respectively. Dark currents were reduced to 1.2 mA/cm2 and 12 μA/cm2 respectively by utilizing the selective diffusion process. The effect of operating voltage is discussed. At 300 K the quantum efficiency was up to 40% at 2.18 μm in mesa devices. D∗ was 1.7 ×1010cm ·√{Hz } /W at 2 μm.

  4. Mid-Infrared Tunable Resonant Cavity Enhanced Detectors

    Directory of Open Access Journals (Sweden)

    Hans Zogg

    2008-09-01

    Full Text Available Mid-infrared detectors that are sensitive only in a tunable narrow spectral band are presented. They are based on the Resonant Cavity Enhanced Detector (RCED principle and employing a thin active region using IV-VI narrow gap semiconductor layers. A Fabry-Pérot cavity is formed by two mirrors. The active layer is grown onto one mirror, while the second mirror can be displaced. This changes the cavity length thus shifting the resonances where the detector is sensitive. Using electrostatically actuated MEMS micromirrors, a very compact tunable detector system has been fabricated. Mirror movements of more than 3 μm at 30V are obtained. With these mirrors, detectors with a wavelength tuning range of about 0.7 μm have been realized. Single detectors can be used in mid-infrared micro spectrometers, while a detector arrangement in an array makes it possible to realize Adaptive Focal Plane Arrays (AFPA.

  5. Insight on quantum dot infrared photodetectors

    International Nuclear Information System (INIS)

    Rogalski, A

    2009-01-01

    The paper presents possible future developments of quantum dot infrared photodetectors (QDIPs). At the beginning the fundamental properties of QDIPs are summarized. Next, investigations of the performance of QDIPs, as compared to other types of infrared photodetectors, are presented. Theoretical predictions indicate that only type II superlattice photodiodes and QDIPs are expected to compete with HgCdTe photodiodes. QDIPs theoretically have several advantages compared with QWIPs including the normal incidence response, lower dark current, higher operating temperature, higher responsivity and detectivity. The operating temperature for HgCdTe detectors is higher than for other types of photon detectors. Comparison of QDIP performance with HgCdTe detectors gives evidence that the QDIP is suitable for high operation temperature. It can be expected that an improvement in technology and design of QDIP detectors will make it possible to achieve both high sensitivity and fast response useful for practical application at room temperature focal plane arrays. However, so far the QDIP devices have not fully demonstrated their potential advantages.

  6. Infrared detectors for Earth observation

    Science.gov (United States)

    Barnes, K.; Davis, R. P.; Knowles, P.; Shorrocks, N.

    2016-05-01

    IASI (Infrared Atmospheric Sounding Interferometer), developed by CNES and launched since 2006 on the Metop satellites, is established as a major source of data for atmospheric science and weather prediction. The next generation - IASI NG - is a French national contribution to the Eumetsat Polar System Second Generation on board of the Metop second generation satellites and is under development by Airbus Defence and Space for CNES. The mission aim is to achieve twice the performance of the original IASI instrument in terms of sensitivity and spectral resolution. In turn, this places very demanding requirements on the infrared detectors for the new instrument. Selex ES in Southampton has been selected for the development of the infrared detector set for the IASI-NG instruments. The wide spectral range, 3.6 to 15.5 microns, is covered in four bands, each served by a dedicated detector design, with a common 4 x 4 array format of 1.3 mm square macropixels. Three of the bands up to 8.7 microns employ photovoltaic MCT (mercury cadmium telluride) technology and the very long wave band employs photoconductive MCT, in common with the approach taken between Airbus and Selex ES for the SEVIRI instrument on Second Generation Meteosat. For the photovoltaic detectors, the MCT crystal growth of heterojunction photodiodes is by the MOVPE technique (metal organic vapour phase epitaxy). Novel approaches have been taken to hardening the photovoltaic macropixels against localised crystal defects, and integrating transimpedance amplifiers for each macropixel into a full-custom silicon read out chip, which incorporates radiation hard design.

  7. Challenges of small-pixel infrared detectors: a review.

    Science.gov (United States)

    Rogalski, A; Martyniuk, P; Kopytko, M

    2016-04-01

    In the last two decades, several new concepts for improving the performance of infrared detectors have been proposed. These new concepts particularly address the drive towards the so-called high operating temperature focal plane arrays (FPAs), aiming to increase detector operating temperatures, and as a consequence reduce the cost of infrared systems. In imaging systems with the above megapixel formats, pixel dimension plays a crucial role in determining critical system attributes such as system size, weight and power consumption (SWaP). The advent of smaller pixels has also resulted in the superior spatial and temperature resolution of these systems. Optimum pixel dimensions are limited by diffraction effects from the aperture, and are in turn wavelength-dependent. In this paper, the key challenges in realizing optimum pixel dimensions in FPA design including dark current, pixel hybridization, pixel delineation, and unit cell readout capacity are outlined to achieve a sufficiently adequate modulation transfer function for the ultra-small pitches involved. Both photon and thermal detectors have been considered. Concerning infrared photon detectors, the trade-offs between two types of competing technology-HgCdTe material systems and III-V materials (mainly barrier detectors)-have been investigated.

  8. Radiation response issues for infrared detectors

    Science.gov (United States)

    Kalma, Arne H.

    1990-01-01

    Researchers describe the most important radiation response issues for infrared detectors. In general, the two key degradation mechanisms in infrared detectors are the noise produced by exposure to a flux of ionizing particles (e.g.; trapped electronics and protons, debris gammas and electrons, radioactive decay of neutron-activated materials) and permanent damage produced by exposure to total dose. Total-dose-induced damage is most often the result of charge trapping in insulators or at interfaces. Exposure to short pulses of ionization (e.g.; prompt x rays or gammas, delayed gammas) will cause detector upset. However, this upset is not important to a sensor unless the recovery time is too long. A few detector technologies are vulnerable to neutron-induced displacement damage, but fortunately most are not. Researchers compare the responses of the new technologies with those of the mainstream technologies of PV HgCdTe and IBC Si:As. One important reason for this comparison is to note where some of the newer technologies have the potential to provide significantly improved radiation hardness compared with that of the mainstream technologies, and thus to provide greater motivation for the pursuit of these technologies.

  9. Enhancing the Responsivity of Uncooled Infrared Detectors Using Plasmonics for High-Performance Infrared Spectroscopy

    Directory of Open Access Journals (Sweden)

    Amr Shebl Ahmed

    2017-04-01

    Full Text Available A lead zirconate titanate (PZT;Pb(Zr0.52Ti0.48O3 layer embedded infrared (IR detector decorated with wavelength-selective plasmonic crystals has been investigated for high-performance non-dispersive infrared (NDIR spectroscopy. A plasmonic IR detector with an enhanced IR absorption band has been designed based on numerical simulations, fabricated by conventional microfabrication techniques, and characterized with a broadly tunable quantum cascade laser. The enhanced responsivity of the plasmonic IR detector at specific wavelength band has improved the performance of NDIR spectroscopy and pushed the limit of detection (LOD by an order of magnitude. In this paper, a 13-fold enhancement in the LOD of a methane gas sensing using NDIR spectroscopy is demonstrated with the plasmonic IR detector.

  10. Pyroelectric Materials for Uncooled Infrared Detectors: Processing, Properties, and Applications

    Science.gov (United States)

    Aggarwal, M. D.; Batra, A. K.; Guggilla, P.; Edwards, M. E.; Penn, B. G.; Currie, J. R., Jr.

    2010-01-01

    Uncooled pyroelectric detectors find applications in diverse and wide areas such as industrial production; automotive; aerospace applications for satellite-borne ozone sensors assembled with an infrared spectrometer; health care; space exploration; imaging systems for ships, cars, and aircraft; and military and security surveillance systems. These detectors are the prime candidates for NASA s thermal infrared detector requirements. In this Technical Memorandum, the physical phenomena underlying the operation and advantages of pyroelectric infrared detectors is introduced. A list and applications of important ferroelectrics is given, which is a subclass of pyroelectrics. The basic concepts of processing of important pyroelectrics in various forms are described: single crystal growth, ceramic processing, polymer-composites preparation, and thin- and thick-film fabrications. The present status of materials and their characteristics and detectors figures-of-merit are presented in detail. In the end, the unique techniques demonstrated for improving/enhancing the performance of pyroelectric detectors are illustrated. Emphasis is placed on recent advances and emerging technologies such as thin-film array devices and novel single crystal sensors.

  11. Kinetic inductance detectors for far-infrared spectroscopy

    International Nuclear Information System (INIS)

    Barlis, A.; Aguirre, J.; Stevenson, T.

    2016-01-01

    The star formation mechanisms at work in the early universe remain one of the major unsolved problems of modern astrophysics. Many of the luminous galaxies present during the period of peak star formation (at redshift of about 2.5) were heavily enshrouded in dust, which makes observing their properties difficult at optical wavelengths. However, many spectral lines exist at far-infrared wavelengths that serve as tracers of star formation. Here, we describe a detector system suitable for a balloon-borne spectroscopic intensity mapping experiment at far-infrared wavelengths. The system uses lumped-element kinetic inductance detectors (KIDs), which have the potential to achieve high sensitivity and low noise levels. KIDs consist of separate capacitive and inductive elements, and use the inductive element as the radiation absorber. We describe the design considerations, fabrication process, and readout scheme for a prototype LEKID array of 1600 pixels. - Highlights: • We describe a concept for a balloon-borne telescope for far-IR wavelengths. • Telescope would use high-sensitivity kinetic inductance detectors. • Design considerations and fabrication process for prototype detectors.

  12. Kinetic inductance detectors for far-infrared spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Barlis, A., E-mail: abarlis@physics.upenn.edu [University of Pennsylvania Department of Physics and Astronomy, Philadelphia, Pennsylvania (United States); Aguirre, J. [University of Pennsylvania Department of Physics and Astronomy, Philadelphia, Pennsylvania (United States); Stevenson, T. [NASA Goddard Space Flight Center, Greenbelt, Maryland (United States)

    2016-07-11

    The star formation mechanisms at work in the early universe remain one of the major unsolved problems of modern astrophysics. Many of the luminous galaxies present during the period of peak star formation (at redshift of about 2.5) were heavily enshrouded in dust, which makes observing their properties difficult at optical wavelengths. However, many spectral lines exist at far-infrared wavelengths that serve as tracers of star formation. Here, we describe a detector system suitable for a balloon-borne spectroscopic intensity mapping experiment at far-infrared wavelengths. The system uses lumped-element kinetic inductance detectors (KIDs), which have the potential to achieve high sensitivity and low noise levels. KIDs consist of separate capacitive and inductive elements, and use the inductive element as the radiation absorber. We describe the design considerations, fabrication process, and readout scheme for a prototype LEKID array of 1600 pixels. - Highlights: • We describe a concept for a balloon-borne telescope for far-IR wavelengths. • Telescope would use high-sensitivity kinetic inductance detectors. • Design considerations and fabrication process for prototype detectors.

  13. Effects of ionizing radiation on cryogenic infrared detectors

    Science.gov (United States)

    Moseley, S. H.; Silverberg, R. F.; Lakew, B.

    1989-01-01

    The Diffuse Infrared Background Experiment (DIRBE) is one of three experiments to be carried aboard the Cosmic Background Explorer (COBE) satellite scheduled to be launched by NASA on a Delta rocket in 1989. The DIRBE is a cryogenic absolute photometer operating in a liquid helium dewar at 1.5 K. Photometric stability is a principal requirement for achieving the scientific objectives of this experiment. The Infrared Astronomy Satellite (IRAS), launched in 1983, which used detectors similar to those in DIRBE, revealed substantial changes in detector responsivity following exposure to ionizing radiation encountered on passage through the South Atlantic Anomaly (SAA). Since the COBE will use the same 900 Km sun-synchronous orbit as IRAS, ionizing radiation-induced performance changes in the detectors were a major concern. Here, ionizing radiation tests carried out on all the DIRBE photodetectors are reported. Responsivity changes following exposure to gamma rays, protons, and alpha particle are discussed. The detector performance was monitored following a simulated entire mission life dose. In addition, the response of the detectors to individual particle interactions was measured. The InSb photovoltaic detectors and the Blocked Impurity Band (BIB) detectors revealed no significant change in responsivity following radiation exposure. The Ge:Ga detectors show large effects which were greatly reduced by proper thermal annealing.

  14. Spontaneous Superlattice Formation in Nanorods through PartialCation Exchange

    Energy Technology Data Exchange (ETDEWEB)

    Robinson, Richard D.; Sadtler, Bryce; Demchenko, Denis O.; Erdonmez, Can K.; Wang, Lin-Wang; Alivisatos, A. Paul

    2007-03-14

    Lattice mismatch strains are widely known to controlnanoscale pattern formation in heteroepitaxy, but such effects have notbeen exploited in colloidal nanocrystal growth. We demonstrate acolloidal route to synthesizing CdS-Ag2S nanorod superlattices throughpartial cation exchange. Strain induces the spontaneous formation ofperiodic structures. Ab initio calculations of the interfacial energy andmodeling of strain energies show that these forces drive theself-organization. The nanorod superlattices exhibit high stabilityagainst ripening and phase mixing. These materials are tunablenear-infrared emitters with potential applications as nanometer-scaleoptoelectronic devices.

  15. Quantum efficiency investigations of type-II InAs/GaSb midwave infrared superlattice photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Giard, E., E-mail: edouard.giard@onera.fr; Ribet-Mohamed, I.; Jaeck, J.; Viale, T.; Haïdar, R. [ONERA, DOTA, Chemin de la Hunière, 91761 Palaiseau Cedex (France); Taalat, R.; Delmas, M.; Rodriguez, J.-B.; Christol, P. [Institut d' Electronique du Sud, UMR-CNRS 5214, Université Montpellier 2, Place Eugène Bataillon, 34095 Montpellier Cedex 5 (France); Steveler, E.; Bardou, N. [Laboratoire de Photonique et de Nanostructures (LPN-CNRS), Route de Nozay, 91460 Marcoussis (France); Boulard, F. [CEA, LETI, MINATEC Campus, 17 Avenue des martyrs, 38054 Grenoble (France)

    2014-07-28

    We present in this paper a comparison between different type-II InAs/GaSb superlattice (T2SL) photodiodes and focal plane array (FPA) in the mid-wavelength infrared domain to understand which phenomenon drives the performances of the T2SL structure in terms of quantum efficiency (QE). Our measurements on test photodiodes suggest low minority carrier diffusion length in the “InAs-rich” design, which penalizes carriers' collection in this structure for low bias voltage and front side illumination. This analysis is completed by a comparison of the experimental data with a fully analytic model, which allows to infer a hole diffusion length shorter than 100 nm. In addition, measurements on a FPA with backside illumination are finally presented. Results show an average QE in the 3–4.7 μm window equal to 42% for U{sub bias} = −0.1 V, 77 K operating temperature and no anti-reflection coating. These measurements, completed by modulation transfer function and noise measurements, reveal that the InAs-rich design, despite a low hole diffusion length, is promising for high performance infrared imaging applications.

  16. Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

    Science.gov (United States)

    2016-05-16

    AFRL-AFOSR-JP-TR-2016-0054 Silicon based mid infrared SiGeSn heterostrcture emitters and detectors Greg Sun UNIVERSITY OF MASSACHUSETTS Final Report... Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors ” February 10, 2016 Principal Investigator: Greg Sun Engineering...diodes are incompatible with the CMOS process and therefore cannot be easily integrated with Si electronics . The GeSn mid IR detectors developed in

  17. Background–limited long wavelength infrared InAs/InAs1− xSbx type-II superlattice-based photodetectors operating at 110 K

    Directory of Open Access Journals (Sweden)

    Abbas Haddadi

    2017-03-01

    Full Text Available We report the demonstration of high-performance long-wavelength infrared (LWIR nBn photodetectors based on InAs/InAs1− xSbx type-II superlattices. A new saw-tooth superlattice design was used to implement the electron barrier of the photodetectors. The device exhibited a cut-off wavelength of ∼10 μ m at 77 K. The photodetector exhibited a peak responsivity of 2.65 A/W, corresponding to a quantum efficiency of 43%. With an R × A of 664 Ω · cm 2 and a dark current density of 8 × 10−5 A/cm2, under −80 mV bias voltage at 77 K, the photodetector exhibited a specific detectivity of 4.72 × 1011 cm· Hz / W and a background–limited operating temperature of 110 K.

  18. Photoacoustic-based detector for infrared laser spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Scholz, L.; Palzer, S., E-mail: stefan.palzer@imtek.uni-freiburg.de [Department of Microsystems Engineering-IMTEK, Laboratory for Gas Sensors, University of Freiburg, Georges-Köhler-Allee 102, Freiburg 79110 (Germany)

    2016-07-25

    In this contribution, we present an alternative detector technology for use in direct absorption spectroscopy setups. Instead of a semiconductor based detector, we use the photoacoustic effect to gauge the light intensity. To this end, the target gas species is hermetically sealed under excess pressure inside a miniature cell along with a MEMS microphone. Optical access to the cell is provided by a quartz window. The approach is particularly suitable for tunable diode laser spectroscopy in the mid-infrared range, where numerous molecules exhibit large absorption cross sections. Moreover, a frequency standard is integrated into the method since the number density and pressure inside the cell are constant. We demonstrate that the information extracted by our method is at least equivalent to that achieved using a semiconductor-based photon detector. As exemplary and highly relevant target gas, we have performed direct spectroscopy of methane at the R3-line of the 2v{sub 3} band at 6046.95 cm{sup −1} using both detector technologies in parallel. The results may be transferred to other infrared-active transitions without loss of generality.

  19. Characterization of the Nb-B superlattice system

    Energy Technology Data Exchange (ETDEWEB)

    Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J., E-mail: jguimpel@cab.cnea.gov.ar

    2016-12-15

    Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

  20. Characterization of the Nb-B superlattice system

    International Nuclear Information System (INIS)

    Franco, D.G.; Sarmiento-Chavez, A.; Schenone, N.; Llacsahuanga Allcca, A.E.; Gómez Berisso, M.; Fasano, Y.; Guimpel, J.

    2016-01-01

    Highlights: • In this manuscript we study the crystalline and superconducting properties of this system, as a possible material to be used in solid state neutron detector sensors. • The results show that this superlattice system can be grown even for very thin layers, in spite of the Nb-B binary system showing many possible compounds, which could enhance interdifussion at the interfaces. • Also, the superconducting properties are not degraded, and they are even enhanced with respect to those of single Nb films of the same thickness. • In conclusion, we find that this system is a good potential candidate for the design and construction of solid state neutron Transition Edge Sensors. - Abstract: We study the growth, stacking and superconducting properties of Nb and B thin films and superlattices. The interest in these resides in their possible use in transition edge neutron sensors. The samples were grown by magnetron sputtering over Si (1  0  0) substrates. The X-ray diffraction patterns for all Nb containing samples show a Nb (1  1  0) preferential orientation. From the low-angle X-ray reflectivity we obtain information on the superlattice structure. The superconducting transition temperatures of the superlattices, obtained from the temperature dependence of the magnetization, are higher than those of single Nb films of similar thickness. The temperature dependence of the perpendicular and parallel upper critical fields indicate that the superlattices behave as an array of decoupled superconducting Nb layers.

  1. Design of the flame detector based on pyroelectric infrared sensor

    Science.gov (United States)

    Liu, Yang; Yu, Benhua; Dong, Lei; Li, Kai

    2017-10-01

    As a fire detection device, flame detector has the advantages of short reaction time and long distance. Based on pyroelectric infrared sensor working principle, the passive pyroelectric infrared alarm system is designed, which is mainly used for safety of tunnel to detect whether fire occurred or not. Modelling and Simulation of the pyroelectric Detector Using Labview. An attempt was made to obtain a simple test platform of a pyroelectric detector which would make an excellent basis for the analysis of its dynamic behaviour. After many experiments, This system has sensitive response, high anti-interference ability and safe and reliable performance.

  2. Temperature-dependent far-infrared reflectance of an epitaxial (BaTiO.sub.3./sub.).sub.8./sub./(SrTiO.sub.3./sub.).sub.4./sub. superlattice

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Caha, O.; Soukiassian, A.; Schlom, D. G.; Xi, X.X.

    2017-01-01

    Roč. 95, č. 21 (2017), 1-10, č. článku 214110. ISSN 2469-9950 Institutional support: RVO:68378271 Keywords : infrared spectroscopy * ferroelectric superlattice Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 3.836, year: 2016

  3. Infrared detectors and test technology of cryogenic camera

    Science.gov (United States)

    Yang, Xiaole; Liu, Xingxin; Xing, Mailing; Ling, Long

    2016-10-01

    Cryogenic camera which is widely used in deep space detection cools down optical system and support structure by cryogenic refrigeration technology, thereby improving the sensitivity. Discussing the characteristics and design points of infrared detector combined with camera's characteristics. At the same time, cryogenic background test systems of chip and detector assembly are established. Chip test system is based on variable cryogenic and multilayer Dewar, and assembly test system is based on target and background simulator in the thermal vacuum environment. The core of test is to establish cryogenic background. Non-uniformity, ratio of dead pixels and noise of test result are given finally. The establishment of test system supports for the design and calculation of infrared systems.

  4. Intraband dynamics and terahertz emission in biased semiconductor superlattices coupled to double far-infrared pulses

    International Nuclear Information System (INIS)

    Min, Li; Xian-Wu, Mi

    2009-01-01

    This paper studies both the intraband polarization and terahertz emission of a semiconductor superlattice in combined dc and ac electric fields by using the superposition of two identical time delayed and phase shifted optical pulses. By adjusting the delay between these two optical pulses, our results show that the intraband polarization is sensitive to the time delay. The peak values appear again for the terahertz emission intensity due to the superposition of two optical pulses. The emission lines of terahertz blueshift and redshift in different ac electric fields and dynamic localization appears. The emission lines of THz only appear to blueshift when the biased superlattice is driven by a single optical pulse. Due to excitonic dynamic localization, the terahertz emission intensity decays with time in different dc and ac electric fields. These are features of this superlattice which distinguish it from a superlattice generated by a single optical pulse to drive it. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  5. Infrared detectors and arrays; Proceedings of the Meeting, Orlando, FL, Apr. 6, 7, 1988

    International Nuclear Information System (INIS)

    Dereniak, E.L.

    1988-01-01

    The papers contained in this volume provide an overview of recent advances in theoretical and experimental research related to IR detector materials and arrays. The major subject areas covered include IR Schottky barrier silicide arrays, HdCdTe developments, SPRITE technology, superlattice or bandgap-engineered devices, extrinsic silicon technology, indium antimonide technology, and pyroelectric arrays. Papers are presented on time division multiplexed time delay integration, spatial noise in staring IR focal plane arrays, pyroelectrics in a harsh environment, and testing of focal plane arrays

  6. Thermophysics modeling of an infrared detector cryochamber for transient operational scenario

    Science.gov (United States)

    Singhal, Mayank; Singhal, Gaurav; Verma, Avinash C.; Kumar, Sushil; Singh, Manmohan

    2016-05-01

    An infrared detector (IR) is essentially a transducer capable of converting radiant energy in the infrared regime into a measurable form. The benefit of infrared radiation is that it facilitates viewing objects in dark or through obscured conditions by detecting the infrared energy emitted by them. One of the most significant applications of IR detector systems is for target acquisition and tracking of projectile systems. IR detectors also find widespread applications in the industry and commercial market. The performance of infrared detector is sensitive to temperatures and performs best when cooled to cryogenic temperatures in the range of nearly 120 K. However, the necessity to operate in such cryogenic regimes increases the complexity in the application of IR detectors. This entails a need for detailed thermophysics analysis to be able to determine the actual cooling load specific to the application and also due to its interaction with the environment. This will enable design of most appropriate cooling methodologies suitable for specific scenarios. The focus of the present work is to develop a robust thermo-physical numerical methodology for predicting IR cryochamber behavior under transient conditions, which is the most critical scenario, taking into account all relevant heat loads including radiation in its original form. The advantage of the developed code against existing commercial software (COMSOL, ANSYS, etc.), is that it is capable of handling gas conduction together with radiation terms effectively, employing a ubiquitous software such as MATLAB. Also, it requires much smaller computational resources and is significantly less time intensive. It provides physically correct results enabling thermal characterization of cryochamber geometry in conjunction with appropriate cooling methodology. The code has been subsequently validated experimentally as the observed cooling characteristics are found to be in close agreement with the results predicted using

  7. Emerging technologies for high performance infrared detectors

    Science.gov (United States)

    Tan, Chee Leong; Mohseni, Hooman

    2018-01-01

    Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III-V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

  8. Emerging technologies for high performance infrared detectors

    Directory of Open Access Journals (Sweden)

    Tan Chee Leong

    2018-01-01

    Full Text Available Infrared photodetectors (IRPDs have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as lowering the fabrication cost, simplifying the fabrication processes, increasing the production yield, and increasing the operating temperature by making use of advances in nanofabrication and nanotechnology. We will first review the nanomaterial with suitable electronic and mechanical properties, such as two-dimensional material, graphene, transition metal dichalcogenides, and metal oxides. We compare these with more traditional low-dimensional material such as quantum well, quantum dot, quantum dot in well, semiconductor superlattice, nanowires, nanotube, and colloid quantum dot. We will also review the nanostructures used for enhanced light-matter interaction to boost the IRPD sensitivity. These include nanostructured antireflection coatings, optical antennas, plasmonic, and metamaterials.

  9. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    International Nuclear Information System (INIS)

    Tynell, Tommi; Karppinen, Maarit

    2014-01-01

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

  10. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

    2014-01-31

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

  11. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

    International Nuclear Information System (INIS)

    Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao-Yu; Liu, Shi; Zhang, Yong-Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

    2015-01-01

    We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures, we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 200 ns, with a vertical diffusivity of 3 × 10 −2  cm 2 /s. We also report on the device's optical response characteristics at 78 K

  12. Radiation effects in IRAS extrinsic infrared detectors

    Science.gov (United States)

    Varnell, L.; Langford, D. E.

    1982-01-01

    During the calibration and testing of the Infrared Astronomy Satellite (IRAS) focal plane, it was observed that the extrinsic photoconductor detectors were affected by gamma radiation at dose levels of the order of one rad. Since the flight environment will subject the focal plane to dose levels of this order from protons in single pass through the South Atlantic Anomaly, an extensive program of radiation tests was carried out to measure the radiation effects and to devise a method to counteract these effects. The effects observed after irradiation are increased responsivity, noise, and rate of spiking of the detectors after gamma-ray doses of less than 0.1 rad. The detectors can be returned almost to pre-irradiation performance by increasing the detector bias to breakdown and allowing a large current to flow for several minutes. No adverse effects on the detectors have been observed from this bias boost, and this technique will be used for IRAS with frequent calibration to ensure the accuracy of observations made with the instrument.

  13. SAT's infrared equipment using second-generation detectors

    Science.gov (United States)

    Siriex, Michel B.

    1995-09-01

    In 1982 SAT proposed for the first time a second generation detector in the design of FLIRs for the TRIGAT program, since then different types of IR equipment have been developed on the basis of this technology: (1) An infra-red seeker for the MICA missile. (2) Three types of IRST: VAMPIR MB for naval applications, SIRENE for the Army and OSF for the Rafale aircraft. (3) Three thermal imagers: Condor 1 for the mast mounted sight equipping the long range anti tank system, Tiger installed on the sight of the medium range antitank system, and Condor 2 for the pilot sight of the TRIGAT French-German helicopter. Infra-red detectors are MCT IR-CCD focal plane arrays developed by SOFRADIR with the objective of the best standardization possible in spite of different configurations and specifications for each program. In this paper, we intend to present the main features of this technology for these programs and the advantages obtained by comparison with the first generation in terms of performance. Industrialization of these products is starting now, and a specific effort has been made to standardize the components, especially the driving and read out electronics. A set of ASICs has been developed to make compact detection modules including a detector in his dewar, a cooling machine, and a proximity electronic.

  14. Carrier recombination in mid-wave infrared InAs/InAsSb superlattices

    Science.gov (United States)

    Aytac, Yigit; Olson, Benjamin Varberg; Kim, Jin K.; Shaner, Eric A.; Hawkins, Sam D.; Klem, John F.; Flatté, Michael E.; Boggess, Thomas F.

    2014-03-01

    Measurements of carrier recombination rates using a temperature-dependent time-resolved differential transmission technique are reported for mid-wave infrared InAs / InAs1 - x Sbx type-2 superlattices (T2SLs). By engineering the layer widths and antimony compositions a 16K band-gap of ~ 238 meV was achieved for all five unintentionally doped T2SLs. Carrier recombination rates were determined for all five samples by fitting a rate equation model to the density and temperature dependent data. Minority-carrier lifetimes as long as 22 μs were measured at 14K, while lifetimes in excess of 2 μs were measured for all five samples at 200K. The minority-carrier lifetimes were observed to generally increase with increasing antimony content. While minority-carrier lifetimes are much longer than those observed in InAs/Ga(In)Sb T2SLs, Auger recombination processes were found to be more prominent in the Ga-free T2SLs. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This research was funded by the U.S. Government.

  15. Polymer-Ceramic Composite Materials for Pyroelectric Infrared Detectors: An Overview

    Science.gov (United States)

    Aggarwal, M. D; Currie, J. R.; Penn, B. G.; Batra, A. K.; Lal, R. B.

    2007-01-01

    Ferroelectrics:Polymer composites can be considered an established substitute for conventional electroceramics and ferroelectric polymers. The composites have a unique blend of polymeric properties such as mechanical flexibility, high strength, formability, and low cost, with the high electro-active properties of ceramic materials. They have attracted considerable interest because of their potential use in pyroelectric infrared detecting devices and piezoelectric transducers. These flexible sensors and transducers may eventually be useful for their health monitoring applications for NASA crew launch vehicles and crew exploration vehicles being developed. In the light of many technologically important applications in this field, it is worthwhile to present an overview of the pyroelectric infrared detector theory, models to predict dielectric behavior and pyroelectric coefficient, and the concept of connectivity and fabrication techniques of biphasic composites. An elaborate review of Pyroelectric-Polymer composite materials investigated to date for their potential use in pyroelectric infrared detectors is presented.

  16. Performance overview of the Euclid infrared focal plane detector subsystems

    Science.gov (United States)

    Waczynski, A.; Barbier, R.; Cagiano, S.; Chen, J.; Cheung, S.; Cho, H.; Cillis, A.; Clémens, J.-C.; Dawson, O.; Delo, G.; Farris, M.; Feizi, A.; Foltz, R.; Hickey, M.; Holmes, W.; Hwang, T.; Israelsson, U.; Jhabvala, M.; Kahle, D.; Kan, Em.; Kan, Er.; Loose, M.; Lotkin, G.; Miko, L.; Nguyen, L.; Piquette, E.; Powers, T.; Pravdo, S.; Runkle, A.; Seiffert, M.; Strada, P.; Tucker, C.; Turck, K.; Wang, F.; Weber, C.; Williams, J.

    2016-07-01

    In support of the European space agency (ESA) Euclid mission, NASA is responsible for the evaluation of the H2RG mercury cadmium telluride (MCT) detectors and electronics assemblies fabricated by Teledyne imaging systems. The detector evaluation is performed in the detector characterization laboratory (DCL) at the NASA Goddard space flight center (GSFC) in close collaboration with engineers and scientists from the jet propulsion laboratory (JPL) and the Euclid project. The Euclid near infrared spectrometer and imaging photometer (NISP) will perform large area optical and spectroscopic sky surveys in the 0.9-2.02 μm infrared (IR) region. The NISP instrument will contain sixteen detector arrays each coupled to a Teledyne SIDECAR application specific integrated circuit (ASIC). The focal plane will operate at 100K and the SIDECAR ASIC will be in close proximity operating at a slightly higher temperature of 137K. This paper will describe the test configuration, performance tests and results of the latest engineering run, also known as pilot run 3 (PR3), consisting of four H2RG detectors operating simultaneously. Performance data will be presented on; noise, spectral quantum efficiency, dark current, persistence, pixel yield, pixel to pixel uniformity, linearity, inter pixel crosstalk, full well and dynamic range, power dissipation, thermal response and unit cell input sensitivity.

  17. Development and Production of Array Barrier Detectors at SCD

    Science.gov (United States)

    Klipstein, P. C.; Avnon, E.; Benny, Y.; Berkowicz, E.; Cohen, Y.; Dobromislin, R.; Fraenkel, R.; Gershon, G.; Glozman, A.; Hojman, E.; Ilan, E.; Karni, Y.; Klin, O.; Kodriano, Y.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nevo, I.; Nitzani, M.; Pivnik, I.; Rappaport, N.; Rosenberg, O.; Shtrichman, I.; Shkedy, L.; Snapi, N.; Talmor, R.; Tessler, R.; Weiss, E.; Tuito, A.

    2017-09-01

    XB n or XB p barrier detectors exhibit diffusion-limited dark currents comparable with mercury cadmium telluride Rule-07 and high quantum efficiencies. In 2011, SemiConductor Devices (SCD) introduced "HOT Pelican D", a 640 × 512/15- μm pitch InAsSb/AlSbAs XB n mid-wave infrared (MWIR) detector with a 4.2- μm cut-off and an operating temperature of ˜150 K. Its low power (˜3 W), high pixel operability (>99.5%) and long mean time to failure make HOT Pelican D a highly reliable integrated detector-cooler product with a low size, weight and power. More recently, "HOT Hercules" was launched with a 1280 × 1024/15- μm format and similar advantages. A 3-megapixel, 10- μm pitch version ("HOT Blackbird") is currently completing development. For long-wave infrared applications, SCD's 640 × 512/15- μm pitch "Pelican-D LW" XB p type II superlattice (T2SL) detector has a ˜9.3- μm cut-off wavelength. The detector contains InAs/GaSb and InAs/AlSb T2SLs, and is fabricated into focal plane array (FPA) detectors using standard production processes including hybridization to a digital silicon read-out integrated circuit (ROIC), glue underfill and substrate thinning. The ROIC has been designed so that the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector family. The Pelican-D LW FPA has a quantum efficiency of ˜50%, and operates at 77 K with a pixel operability of >99% and noise equivalent temperature difference of 13 mK at 30 Hz and F/2.7.

  18. Chemical imaging of cotton fibers using an infrared microscope and a focal-plane array detector

    Science.gov (United States)

    In this presentation, the chemical imaging of cotton fibers with an infrared microscope and a Focal-Plane Array (FPA) detector will be discussed. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In addition, FPA detectors allow for simultaneous spe...

  19. Dualband MW/LW Strained Layer Superlattice Focal Plane Arrays for Satellite-Based Wildfire Detection, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — Infrared focal plane arrays (FPAs) based on Type-II strained layer superlattice (SLS) photodiodes have recently experienced significant advances. In Phase I we...

  20. Interface engineered carbon nanotubes with SiO{sub 2} for flexible infrared detectors

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Zhenlong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Gao, Min, E-mail: mingao@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Pan, Taisong [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Wei, Xianhua [State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang, Sichuan 621010 (China); Chen, Chonglin [Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, TX 78249 (United States); Department of Physics and the Texas Center for Superconductivity, University of Houston, Houston, TX 77204 (United States); Lin, Yuan, E-mail: linyuan@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China); Center for Information in Medicine, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)

    2017-08-15

    Highlights: • Interface engineered carbon nanotubes with SiO{sub 2} is used to construct a kind of flexible infrared detector. • The interface between the MWCNTs and SiO{sub 2} could enhance the IR response speed. • Detector based on the integrated interface of MWCNTs and SiO{sub 2} has successfully detected the movements of the human fingers. - Abstract: Nitrogen-doped/non-doped carbon nanotubes (CNTs) were integrated on SiO{sub 2}/Si and PMMA substrates for understanding the infrared sensing mechanisms. The nanotube structures on SiO{sub 2} substrates exhibit a much shorter response time (about 40 ms) than those directly on PMMA substrates (about 1200 ms), indicating the interface effects between CNTs and the substrates. The infrared responses for both structures show a linear relationship with the light power density even at the radiation power as low as 0.1 mW/mm{sup 2}. Moreover, a new concept flexible IR detector was designed and fabricated by transferring the CNTs/SiO{sub 2} structure onto the PMMA substrate, which exhibits both short response time (50 ms) and good flexibility. The successful detection of human finger movements indicates the practical applications of the CNT-based detectors for the detection of weak thermal or far infrared radiation.

  1. On the sensitivity of heterodyne detectors in far infrared astronomy

    International Nuclear Information System (INIS)

    Bueren, H.G. van

    1976-01-01

    The signal-to-noise ratio of astronomical heterodyne detection infrared spectrographs is considered, taking into account background, linewidth and seeing effects. A comparison with incoherent detector systems is presented. (author)

  2. Protection of High Ceiling Nuclear Facilities Using Photoelectric Sensors and Infrared Fire Detectors

    International Nuclear Information System (INIS)

    Wadoud, A.A.; El Eissawi, H.M.; Saleh, A.A.

    2017-01-01

    A variety of different security systems and components are commercially available and widely used. Before implementing a security system, it is important to understand the characteristics and requirements of the facility area to be protected. Technology and manufacturers of security devices are rapidly changing. It is necessary to use optimal security equipment suitable for the surrounding environment of the facility to be protected. Several security sensors can be used to protect the nuclear facilities, such as passive infrared detectors and glass breakage sensors, vibration detectors, and microwave sensors. This work introduces technical specifications, operation and method of installation for these detectors in nuclear facilities. Also a comparative study of different security sensors or equipment is provided. The photoelectric detectors and infrared fire beam smoke detectors are reliable, suitable and advanced security equipment. They can be used in special cases because of their advantages, this includes their long ranges and accuracy in performance. This paper presents a new concept for adapting the use infrared optical fire beam smoke detector as intrusion detection equipment in high ceiling buildings or towering height facilities. This is in addition to their main function, namely fire detection.The paper also provides a study for their types and installation method. Focus is made on the installation and operation method for two advanced security systems, and wireless control circuit for the overall system operation

  3. Evaluation of light detector surface area for functional Near Infrared Spectroscopy.

    Science.gov (United States)

    Wang, Lei; Ayaz, Hasan; Izzetoglu, Meltem; Onaral, Banu

    2017-10-01

    Functional Near Infrared Spectroscopy (fNIRS) is an emerging neuroimaging technique that utilizes near infrared light to detect cortical concentration changes of oxy-hemoglobin and deoxy-hemoglobin non-invasively. Using light sources and detectors over the scalp, multi-wavelength light intensities are recorded as time series and converted to concentration changes of hemoglobin via modified Beer-Lambert law. Here, we describe a potential source for systematic error in the calculation of hemoglobin changes and light intensity measurements. Previous system characterization and analysis studies looked into various fNIRS parameters such as type of light source, number and selection of wavelengths, distance between light source and detector. In this study, we have analyzed the contribution of light detector surface area to the overall outcome. Results from Monte Carlo based digital phantoms indicated that selection of detector area is a critical system parameter in minimizing the error in concentration calculations. The findings here can guide the design of future fNIRS sensors. Copyright © 2017 Elsevier Ltd. All rights reserved.

  4. Designing Optical Properties in DNA-Programmed Nanoparticle Superlattices

    Science.gov (United States)

    Ross, Michael Brendan

    A grand challenge of modern science has been the ability to predict and design the properties of new materials. This approach to the a priori design of materials presents a number of challenges including: predictable properties of the material building blocks, a programmable means for arranging such building blocks into well understood architectures, and robust models that can predict the properties of these new materials. In this dissertation, we present a series of studies that describe how optical properties in DNA-programmed nanoparticle superlattices can be predicted prior to their synthesis. The first chapter provides a history and introduction to the study of metal nanoparticle arrays. Chapter 2 surveys and compares several geometric models and electrodynamics simulations with the measured optical properties of DNA-nanoparticle superlattices. Chapter 3 describes silver nanoparticle superlattices (rather than gold) and identifies their promise as plasmonic metamaterials. In chapter 4, the concept of plasmonic metallurgy is introduced, whereby it is demonstrated that concepts from materials science and metallurgy can be applied to the optical properties of mixed metallic plasmonic materials, unveiling rich and tunable optical properties such as color and asymmetric reflectivity. Chapter 5 presents a comprehensive theoretical exploration of anisotropy (non-spherical) in nanoparticle superlattice architectures. The role of anisotropy is discussed both on the nanoscale, where several desirable metamaterial properties can be tuned from the ultraviolet to near-infrared, and on the mesoscale, where the size and shape of a superlattice is demonstrated to have a pronounced effect on the observed far-field optical properties. Chapter 6 builds upon those theoretical data presented in chapter 5, including the experimental realization of size and shape dependent properties in DNA-programmed superlattices. Specifically, nanoparticle spacing is explored as a parameter that

  5. Infrared detectors

    CERN Document Server

    Rogalski, Antonio

    2010-01-01

    This second edition is fully revised and reorganized, with new chapters concerning third generation and quantum dot detectors, THz detectors, cantilever and antenna coupled detectors, and information on radiometry and IR optics materials. Part IV concerning focal plane arrays is significantly expanded. This book, resembling an encyclopedia of IR detectors, is well illustrated and contains many original references … a really comprehensive book.-F. Sizov, Institute of Semiconductor Physics, National Academy of Sciences, Kiev, Ukraine

  6. Thermal noise in mid-infrared broadband upconversion detectors

    DEFF Research Database (Denmark)

    Barh, Ajanta; Tidemand-Lichtenberg, Peter; Pedersen, Christian

    2018-01-01

    Low noise detection with state-of-the-art mid-infrared (MIR) detectors (e.g., PbS, PbSe, InSb, HgCdTe) is a primary challenge owing to the intrinsic thermal background radiation of the low bandgap detector material itself. However, researchers have employed frequency upconversion based detectors...... of the noise-equivalent power of an UCD system. In this article, we rigorously analyze the optical power generated by frequency upconversion of the intrinsic black-body radiation in the nonlinear material itself due to the crystals residual emissivity, i.e. absorption. The thermal radiation is particularly...... prominent at the optical absorption edge of the nonlinear material even at room temperature. We consider a conventional periodically poled lithium niobate (PPLN) based MIR-UCD for the investigation. The UCD is designed to cover a broad spectral range, overlapping with the entire absorption edge of the PPLN...

  7. Charge distribution and response time for a modulation-doped extrinsic infrared detector

    Science.gov (United States)

    Hadek, Victor

    1987-01-01

    The electric charge distribution and response time of a modulation-doped extrinsic infrared detector are determined. First, it is demonstrated theoretically that the photoconductive layer is effectively depleted of ionized majority-impurity charges so that scattering is small and mobility is high for photogenerated carriers. Then, using parameters appropriate to an actual detector, the predicted response time is 10 to the -8th to about 10 to the -9th s, which is much faster than comparable conventional detectors. Thus, the modulation-doped detector design would be valuable for heterodyne applications.

  8. Perovskite Superlattices as Tunable Microwave Devices

    Science.gov (United States)

    Christen, H. M.; Harshavardhan, K. S.

    2003-01-01

    Experiments have shown that superlattices that comprise alternating epitaxial layers of dissimilar paraelectric perovskites can exhibit large changes in permittivity with the application of electric fields. The superlattices are potentially useful as electrically tunable dielectric components of such microwave devices as filters and phase shifters. The present superlattice approach differs fundamentally from the prior use of homogeneous, isotropic mixtures of base materials and dopants. A superlattice can comprise layers of two or more perovskites in any suitable sequence (e.g., ABAB..., ABCDABCD..., ABACABACA...). Even though a single layer of one of the perovskites by itself is not tunable, the compositions and sequence of the layers can be chosen so that (1) the superlattice exhibits low microwave loss and (2) the interfacial interaction between at least two of the perovskites in the superlattice renders either the entire superlattice or else at least one of the perovskites tunable.

  9. Fast infrared detectors for beam diagnostics with synchrotron radiation

    International Nuclear Information System (INIS)

    Bocci, A.; Marcelli, A.; Pace, E.; Drago, A.; Piccinini, M.; Cestelli Guidi, M.; De Sio, A.; Sali, D.; Morini, P.; Piotrowski, J.

    2007-01-01

    Beam diagnostic is a fundamental constituent of any particle accelerators either dedicated to high-energy physics or to synchrotron radiation experiments. All storage rings emit radiations. Actually they are high brilliant sources of radiation: the synchrotron radiation emission covers from the infrared range to the X-ray domain with a pulsed structure depending on the temporal characteristics of the stored beam. The time structure of the emitted radiation is extremely useful as a tool to perform time-resolved experiments. However, this radiation can be also used for beam diagnostic to determine the beam stability and to measure the dimensions of the e - or e + beam. Because of the temporal structure of the synchrotron radiation to perform diagnostic, we need very fast detectors. Indeed, the detectors required for the diagnostics of the stored particle bunches at third generation synchrotron radiation sources and FEL need response times in the sub-ns and even ps range. To resolve the bunch length and detect bunch instabilities, X-ray and visible photon detectors may be used achieving response times of a few picoseconds. Recently, photon uncooled infrared devices optimized for the mid-IR range realized with HgCdTe semiconductors allowed to obtain sub-nanosecond response times. These devices can be used for fast detection of intense IRSR sources and for beam diagnostic. We present here preliminary experimental data of the pulsed synchrotron radiation emission of DAΦNE, the electron positron collider of the LNF laboratory of the INFN, performed with new uncooled IR detectors with a time resolution of a few hundreds of picoseconds

  10. The growth of mid-infrared emitting InAsSb/InAsP strained-layer superlattices using metal-organic chemical vapor deposition

    International Nuclear Information System (INIS)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R.; Burkhart, J.H.

    1997-01-01

    We describe the metal-organic chemical vapor deposition os InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500 degrees C, and 200 torr in a horizontal quartz reactor using trimethylindium, triethylantimony, AsH 3 , and PH 3 . By changing the layer thickness and composition we have prepared structures with low temperature (≤20K) photoluminescence wavelengths ranging from 3.2 to 5.0 μm. Excellent performance was observed for an SLS light emitting diode (LED) and both optically pumped and electrically injected SLS layers. An InAsSb/InAsP SLS injection laser emitted at 3.3 μm at 80 K with peak power of 100 mW

  11. Monolayer atomic crystal molecular superlattices

    Science.gov (United States)

    Wang, Chen; He, Qiyuan; Halim, Udayabagya; Liu, Yuanyue; Zhu, Enbo; Lin, Zhaoyang; Xiao, Hai; Duan, Xidong; Feng, Ziying; Cheng, Rui; Weiss, Nathan O.; Ye, Guojun; Huang, Yun-Chiao; Wu, Hao; Cheng, Hung-Chieh; Shakir, Imran; Liao, Lei; Chen, Xianhui; Goddard, William A., III; Huang, Yu; Duan, Xiangfeng

    2018-03-01

    Artificial superlattices, based on van der Waals heterostructures of two-dimensional atomic crystals such as graphene or molybdenum disulfide, offer technological opportunities beyond the reach of existing materials. Typical strategies for creating such artificial superlattices rely on arduous layer-by-layer exfoliation and restacking, with limited yield and reproducibility. The bottom-up approach of using chemical-vapour deposition produces high-quality heterostructures but becomes increasingly difficult for high-order superlattices. The intercalation of selected two-dimensional atomic crystals with alkali metal ions offers an alternative way to superlattice structures, but these usually have poor stability and seriously altered electronic properties. Here we report an electrochemical molecular intercalation approach to a new class of stable superlattices in which monolayer atomic crystals alternate with molecular layers. Using black phosphorus as a model system, we show that intercalation with cetyl-trimethylammonium bromide produces monolayer phosphorene molecular superlattices in which the interlayer distance is more than double that in black phosphorus, effectively isolating the phosphorene monolayers. Electrical transport studies of transistors fabricated from the monolayer phosphorene molecular superlattice show an on/off current ratio exceeding 107, along with excellent mobility and superior stability. We further show that several different two-dimensional atomic crystals, such as molybdenum disulfide and tungsten diselenide, can be intercalated with quaternary ammonium molecules of varying sizes and symmetries to produce a broad class of superlattices with tailored molecular structures, interlayer distances, phase compositions, electronic and optical properties. These studies define a versatile material platform for fundamental studies and potential technological applications.

  12. Miniature Uncooled Infrared Sensitive Detectors for in Vivo Biomedical Imaging Applications

    Energy Technology Data Exchange (ETDEWEB)

    Datskos, P. G.; Demos, S. G.; Rajic, S.

    1998-06-01

    Broadband infrared (OR) radiation detectors have been developed using miniature, inexpensive, mass produced microcantilevers capable of detecting temperature differences as small as lea(-6) K. Microcantilevers made out of semiconductor materials can be used either as uncurled photon or thermal detectors. Mounted on a probe mm in diameter a number of microcantilevers can be accommodated in the working channel of existing endoscopes for in vivo proximity focus measurements inside the human body.

  13. Gerard Kuiper and the Infrared Detector

    Science.gov (United States)

    Sears, Derek

    2013-10-01

    The life and contributions of Gerard Kuiper have been documented by Dale Cruikshank in his National Academy of Sciences biography. I will argue that particularly important in this eventful life was Kuiper's war time experiences. Kuiper's wartime role evolved as the war unfolded, but towards the end he was charged by the US military with reporting German progress with war-related technologies and the activities of scientists under Nazi control. He interviewed a great many scientists, including his own PhD mentor (Ejnar Hertzsprung), and when Kuiper was the only person available, he interviewed concentration-camp victims. He carried briefing sheets that identified the technologies being sought by the allies and the major fraction of these involved infrared equipment. He sent back to the USA boxes of documents, and large amounts of equipment, and he stressed to the military his interest in these for his own research. It seems very likely that in this way an effective PbS infrared detector, so critical to Kuiper's career and the future of planetary science, came to the USA and to Robert Cashman's laboratory at Northwestern University. As the war was winding down, Cashman and Kuiper worked together to develop a practical infrared spectrometer for astronomical use. Within months, Kuiper discovered the C02 atmospheres on Mars and Venus.

  14. Infrared Illuminated CdZnTe detectors with improved performance

    International Nuclear Information System (INIS)

    Ivanov, V.; Loutchanski, A.; Dorogov, P.; Khinoverov, S.

    2013-06-01

    It was found that IR illumination of a properly chosen wavelength and intensity can significantly improve spectrometric characteristics of CdZnTe quasi-hemispherical detectors [1]. Improving of the spectrometric characteristics is due to improvement of uniformity of charge collection by the detector volume. For operation at room temperature the optimal wavelength of IR illumination is about 940 nm, but for operation at lower temperature of -20 deg. C the optimal wavelengths of IR illumination is about 1050 nm. Infrared illumination can be performed using conventional low-power IR LEDs. Application of SMD LEDs allows produce miniature detection probes with IR illuminated CdZnTe detectors. We have fabricated and tested a variety of detection probes with CdZnTe quasi-hemispherical detectors from the smallest with volumes of 1-5 mm 3 to larger with volumes of 1.5 cm 3 and 4.0 cm 3 . The use of IR illumination significantly improves spectrometric characteristics of the probes operating at room temperature, especially probes with detectors of large volumes. The probe with the detector of 4 cm 3 without IR illumination had energy resolution of 24.2 keV at 662 keV and of 12.5 keV with IR illumination. (authors)

  15. Superlattices in thermoelectric applications

    International Nuclear Information System (INIS)

    Sofo, J.O.; Mahan, G.D.; Tennessee Univ., Knoxville, TN

    1994-08-01

    The electrical conductivity, thermopower and the electronic contribution to the thermal conductivity of a superlattice, are calculated with the electric field and the thermal gradient applied parallel to the interfaces. Tunneling between quantum wells is included. The broadening of the lowest subband when the period of the superlattice is decreased produces a reduction of the thermoelectric figure of merit. However, we found that a moderate increase of the figure of merit may be expected for intermediate values of the period, due to the enhancement of the density of states produced by the superlattice structure

  16. Magnetic Rare-Earth Superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Gibbs, D.; Böni, P.

    1988-01-01

    The magnetic structures of several single‐crystal, magnetic rare‐earth superlattice systems grown by molecular‐beam epitaxy are reviewed. In particular, the results of recent neutron diffraction investigations of long‐range magnetic order in Gd‐Y, Dy‐Y, Gd‐Dy, and Ho‐Y periodic superlattices...... are presented. In the Gd‐Y system, an antiphase domain structure develops for certain Y layer spacings, whereas modified helical moment configurations are found to occur in the other systems, some of which are commensurate with the chemical superlattice wavelength. References are made to theoretical interaction...

  17. Thermoelectric infrared microsensors based on a periodically suspended thermopile integrating nanostructured Ge/SiGe quantum dots superlattice

    Energy Technology Data Exchange (ETDEWEB)

    Ziouche, K., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Bougrioua, Z., E-mail: katir.ziouche@iemn.univ-lille1.fr, E-mail: Zahia.bougrioua@iemn.univ-lille1.fr; Lejeune, P.; Lasri, T.; Leclercq, D. [IEMN, Institute of Electronics, Microelectronics and Nanotechnology, CNRS and Lille 1 University, F-59652 Villeneuve d' Ascq (France); Savelli, G.; Hauser, D.; Michon, P.-M. [CEA, LITEN, Thermoelectricity Laboratory, F-38054 Grenoble (France)

    2014-07-28

    This paper presents an original integration of polycrystalline SiGe-based quantum dots superlattices (QDSL) into Thermoelectric (TE) planar infrared microsensors (μSIR) fabricated using a CMOS technology. The nanostructuration in QDSL results into a considerably reduced thermal conductivity by a factor up to 10 compared to the one of standard polysilicon layers that are usually used for IR sensor applications. A presentation of several TE layers, QDSL and polysilicon, is given before to describe the fabrication of the thermopile-based sensors. The theoretical values of the sensitivity to irradiance of μSIR can be predicted thanks to an analytical model. These findings are used to interpret the experimental measurements versus the nature of the TE layer exploited in the devices. The use of nanostructured QDSL as the main material in μSIR thermopile has brought a sensitivity improvement of about 28% consistent with theoretical predictions. The impact of QDSL low thermal conductivity is damped by the contribution of the thermal conductivity of all the other sub-layers that build up the device.

  18. Laboratory Measurement of the Brighter-fatter Effect in an H2RG Infrared Detector

    Science.gov (United States)

    Plazas, A. A.; Shapiro, C.; Smith, R.; Huff, E.; Rhodes, J.

    2018-06-01

    The “brighter-fatter” (BF) effect is a phenomenon—originally discovered in charge coupled devices—in which the size of the detector point-spread function (PSF) increases with brightness. We present, for the first time, laboratory measurements demonstrating the existence of the effect in a Hawaii-2RG HgCdTe near-infrared (NIR) detector. We use JPL’s Precision Projector Laboratory, a facility for emulating astronomical observations with UV/VIS/NIR detectors, to project about 17,000 point sources onto the detector to stimulate the effect. After calibrating the detector for nonlinearity with flat-fields, we find evidence that charge is nonlinearly shifted from bright pixels to neighboring pixels during exposures of point sources, consistent with the existence of a BF-type effect. NASAs Wide Field Infrared Survey Telescope (WFIRST) will use similar detectors to measure weak gravitational lensing from the shapes of hundreds of million of galaxies in the NIR. The WFIRST PSF size must be calibrated to ≈0.1% to avoid biased inferences of dark matter and dark energy parameters; therefore further study and calibration of the BF effect in realistic images will be crucial.

  19. A new generation of small pixel pitch/SWaP cooled infrared detectors

    Science.gov (United States)

    Espuno, L.; Pacaud, O.; Reibel, Y.; Rubaldo, L.; Kerlain, A.; Péré-Laperne, N.; Dariel, A.; Roumegoux, J.; Brunner, A.; Kessler, A.; Gravrand, O.; Castelein, P.

    2015-10-01

    Following clear technological trends, the cooled IR detectors market is now in demand for smaller, more efficient and higher performance products. This demand pushes products developments towards constant innovations on detectors, read-out circuits, proximity electronics boards, and coolers. Sofradir was first to show a 10μm focal plane array (FPA) at DSS 2012, and announced the DAPHNIS 10μm product line back in 2014. This pixel pitch is a key enabler for infrared detectors with increased resolution. Sofradir recently achieved outstanding products demonstrations at this pixel pitch, which clearly demonstrate the benefits of adopting 10μm pixel pitch focal plane array-based detectors. Both HD and XGA Daphnis 10μm products also benefit from a global video datapath efficiency improvement by transitioning to digital video interfaces. Moreover, innovative smart pixels functionalities drastically increase product versatility. In addition to this strong push towards a higher pixels density, Sofradir acknowledges the need for smaller and lower power cooled infrared detector. Together with straightforward system interfaces and better overall performances, latest technological advances on SWAP-C (Size, Weight, Power and Cost) Sofradir products enable the advent of a new generation of high performance portable and agile systems (handheld thermal imagers, unmanned aerial vehicles, light gimbals etc...). This paper focuses on those features and performances that can make an actual difference in the field.

  20. MTF measurement and analysis of linear array HgCdTe infrared detectors

    Science.gov (United States)

    Zhang, Tong; Lin, Chun; Chen, Honglei; Sun, Changhong; Lin, Jiamu; Wang, Xi

    2018-01-01

    The slanted-edge technique is the main method for measurement detectors MTF, however this method is commonly used on planar array detectors. In this paper the authors present a modified slanted-edge method to measure the MTF of linear array HgCdTe detectors. Crosstalk is one of the major factors that degrade the MTF value of such an infrared detector. This paper presents an ion implantation guard-ring structure which was designed to effectively absorb photo-carriers that may laterally defuse between adjacent pixels thereby suppressing crosstalk. Measurement and analysis of the MTF of the linear array detectors with and without a guard-ring were carried out. The experimental results indicated that the ion implantation guard-ring structure effectively suppresses crosstalk and increases MTF value.

  1. Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990

    Science.gov (United States)

    Dereniak, Eustace L.; Sampson, Robert E.

    1990-09-01

    The papers contained in this volume provide an overview of recent advances and the current state of developments in the field of infrared detectors and focal plane arrays. Topics discussed include nickel silicide Schottky-barrier detectors for short-wavelength infrared applications; high performance PtSi linear and focal plane arrays; and multispectral band Schottky-barrier IRSSD for remote-sensing applications. Papers are also presented on the performance of an Insi hybrid focal array; characterization of IR focal plane test stations; GaAs CCD readout for engineered bandgap detectors; and fire detection system for aircraft cargo bays.

  2. Detector location selection based on VIP analysis in near-infrared detection of dural hematoma

    Directory of Open Access Journals (Sweden)

    Qiuming Sun

    2018-03-01

    Full Text Available Detection of dural hematoma based on multi-channel near-infrared differential absorbance has the advantages of rapid and non-invasive detection. The location and number of detectors around the light source are critical for reducing the pathological characteristics of the prediction model on dural hematoma degree. Therefore, rational selection of detector numbers and their distances from the light source is very important. In this paper, a detector position screening method based on Variable Importance in the Projection (VIP analysis is proposed. A preliminary modeling based on Partial Least Squares method (PLS for the prediction of dural position μa was established using light absorbance information from 30 detectors located 2.0–5.0 cm from the light source with a 0.1 cm interval. The mean relative error (MRE of the dural position μa prediction model was 4.08%. After VIP analysis, the number of detectors was reduced from 30 to 4 and the MRE of the dural position μa prediction was reduced from 4.08% to 2.06% after the reduction in detector numbers. The prediction model after VIP detector screening still showed good prediction of the epidural position μa. This study provided a new approach and important reference on the selection of detector location in near-infrared dural hematoma detection. Keywords: Detector location screening, Epidural hematoma detection, Variable importance in the projection

  3. Infrared Imaging of Cotton Fiber Bundles Using a Focal Plane Array Detector and a Single Reflectance Accessory

    Directory of Open Access Journals (Sweden)

    Michael Santiago Cintrón

    2016-11-01

    Full Text Available Infrared imaging is gaining attention as a technique used in the examination of cotton fibers. This type of imaging combines spectral analysis with spatial resolution to create visual images that examine sample composition and distribution. Herein, we report on the use of an infrared instrument equipped with a reflection accessory and an array detector system for the examination of cotton fiber bundles. Cotton vibrational spectra and chemical images were acquired by grouping pixels in the detector array. This technique reduced spectral noise and was employed to visualize cell wall development in cotton fibers bundles. Fourier transform infrared spectra reveal band changes in the C–O bending region that matched previous studies. Imaging studies were quick, relied on small amounts of sample and provided a distribution of the cotton fiber cell wall composition. Thus, imaging of cotton bundles with an infrared detector array has potential for use in cotton fiber examinations.

  4. Photon-Counting Microwave Kinetic Inductance Detectors (MKIDs) for High Resolution Far-Infrared Spectroscopy

    Data.gov (United States)

    National Aeronautics and Space Administration — We are developing ultrasensitive Microwave Kinetic Inductance Detectors (MKIDs) for high resolution far-infrared spectroscopy applications, with a long-term goal of...

  5. Magnetic modes in superlattices

    International Nuclear Information System (INIS)

    Oliveira, F.A.

    1990-04-01

    A first discussion of reciprocal propagation of magnetic modes in a superlattice is presented. In the absence of an applied external magnetic field a superllatice made of alternate layers of the type antiferromagnetic-non-magnetic materials presents effects similar to those of phonons in a dielectric superlattice. (A.C.A.S.) [pt

  6. Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices

    International Nuclear Information System (INIS)

    Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul

    2006-01-01

    A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Performance Simulation of Unipolar InAs/InAs1-x Sb x Type-II Superlattice Photodetector

    Science.gov (United States)

    Singh, Anand; Pal, Ravinder

    2018-05-01

    This paper reports performance simulation of a unipolar tunable band gap InAs-InAsSb type-II superlattice (T2SL) infrared photodetector. The generation-recombination and surface leakage currents limit the performance of T2SL photodiodes. Unipolar nBn device design incorporating a suitable barrier layer in the diode structure is taken to suppress the Auger recombination and tunneling currents. At low reverse bias, the generation-recombination current is negligible in the absence of a depletion region, but the dark current is dominated by the diffusion current at higher operation temperatures. The composition, band alignment, barrier width, doping level and thickness of the absorber region are optimized here to achieve low dark current and high quantum efficiency at elevated operating temperatures. Thin unipolar T2SL absorbers are placed in a resonant cavity to enhance photon-material interaction, thus allowing complete absorption in a thinner detector element. It leads to the reduction in the detector volume for lower dark current without affecting the quantum efficiency. It shows an improvement in the quantum efficiency and reduction in the dark current. Dark current density ˜ 10-5 A/cm2 is achievable with low absorber thickness of 2 μm and effective lifetime of 250 ns in the InAs/InAs0.6Sb0.4/B-AlAs1-x Sb x long wave length T2SL detector at 110 K.

  8. Exchange bias in Fe/Cr double superlattices

    International Nuclear Information System (INIS)

    Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C.; Bader, S. D.

    1999-01-01

    Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter-deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains

  9. Exchange bias in Fe/Cr double superlattices

    International Nuclear Information System (INIS)

    Jiang, J. S.; Felcher, G. P.; Inomata, A.; Goyette, R.; Nelson, C. S.; Bader, S. D.

    2000-01-01

    Utilizing the oscillatory interlayer exchange coupling in Fe/Cr superlattices, we have constructed ''double superlattice'' structures where a ferromagnetic (F) and an antiferromagnetic (AF) Fe/Cr superlattice are coupled through a Cr spacer. The minor hysteresis loops in the magnetization are shifted from zero field, i.e., the F superlattice is exchange biased by the AF one. The double superlattices are sputter deposited with (211) epitaxy and possess uniaxial in-plane magnetic anisotropy. The magnitude of the bias field is satisfactorily described by the classic formula for collinear spin structures. The coherent structure and insensitivity to atomic-scale roughness makes it possible to determine the spin distribution by polarized neutron reflectivity, which confirms that the spin structure is collinear. The magnetic reversal behavior of the double superlattices suggests that a realistic model of exchange bias needs to address the process of nucleating local reverse domains. (c) 2000 American Vacuum Society

  10. Laboratory Measurement of the Brighter-fatter Effect in an H2RG Infrared Detector

    OpenAIRE

    Plazas, A. A.; Shapiro, C.; Smith, R.; Huff, E.; Rhodes, J.

    2018-01-01

    The "brighter-fatter" (BF) effect is a phenomenon (originally discovered in charge coupled devices) in which the size of the detector point spread function (PSF) increases with brightness. We present, for the first time, laboratory measurements demonstrating the existence of the effect in a Hawaii-2RG HgCdTe near infrared (NIR) detector. We use the Precision Projector Laboratory, a JPL facility for emulating astronomical observations with UV/VIS/NIR detectors, to project about 17,000 point so...

  11. The growth of InAsSb/InAsP strained-layer superlattices for use in infrared emitters

    Energy Technology Data Exchange (ETDEWEB)

    Biefeld, R.M.; Allerman, A.A.; Kurtz, S.R. [and others

    1997-06-01

    We describe the metal-organic chemical vapor deposition growth of InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. These SLSs were grown at 500{degrees}C, and 200 torr in a horizontal quartz reactor using TMIn, TESb, AsH{sub 3},and PH{sub 3}. By changing the layer thickness and composition we have prepared structures with low temperature ({le}20K) photoluminescence wavelengths ranging from 3.2 to 4.4 {mu}m. Excellent performance was observed for an SLS LED and both optically pumped and electrically injected SLS lasers. An optically pumped, double heterostructure laser emitted at 3.86 {mu}m with a maximum operating temperature of 240 K and a characteristic temperature of 33 K. We have also made electrically injected lasers and LEDs utilizing a GaAsSb/InAs semi-metal injection scheme. The semi-metal injected, broadband LED emitted at 4 {mu}m with 80 {mu}W of power at 300K and 200 mA average current. The InAsSb/InAsP SLS injection laser emitted at 3.6 gm at 120 K.

  12. Thermal conductivity and heat transfer in superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Chen, G; Neagu, M; Borca-Tasciuc, T

    1997-07-01

    Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and devices based on quantum structures. This work reports progress on the modeling of thermal conductivity of superlattice structures. Results from the models established based on the Boltzmann transport equation could explain existing experimental results on the thermal conductivity of semiconductor superlattices in both in plane and cross-plane directions. These results suggest the possibility of engineering the interfaces to further reduce thermal conductivity of superlattice structures.

  13. Magnetism in lanthanide superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Sarthour, R.S.; McMorrow, D.F.

    2000-01-01

    Neutron diffraction studies of heavy rare-earth superlattices have revealed the stabilization of novel magnetic phases chat are not present in bulk materials. The most striking result is the propagation of the magnetic ordering through nonmagnetic spacer materials. Here we describe some recent X......-ray magnetic resonant scattering studies of light rare-earth superlattices, which illuminate the mechanism of interlayer coupling, and provide access to different areas of Physics. such as the interplay between superconductivity and magnetism. Magnetic X-ray diffraction is found to be particularly well suited...... to the study of the modulated magnetic structures in superlattices, and provides unique information on the conduction-electron spin-density wave responsible for the propagation of magnetic order. (C) 2000 Elsevier Science B.V. All rights reserved....

  14. Rare earth superlattices

    International Nuclear Information System (INIS)

    McMorrow, D.F.

    1997-01-01

    A review is given of recent experiments on the magnetism of rare earth superlattices. Early experiments in this field were concerned mainly with systems formed by combining a magnetic and a non-magnetic element in a superlattice structure. From results gathered on a variety of systems it has been established that the propagation of magnetic order through the non-magnetic spacer can be understood mostly on the basis of an RKKY-like model, where the strength and range of the coupling depends on the details of the conduction electron susceptibility of the spacer. Recent experiments on more complex systems indicate that this model does not provide a complete description. Examples include superlattices where the constituents can either be both magnetic, adopt different crystal structures (Fermi surfaces), or where one of the constituents has a non-magnetic singlet ground state. The results from such systems are presented and discussed in the context of the currently accepted model. (au)

  15. An instrumentation amplifier based readout circuit for a dual element microbolometer infrared detector

    Science.gov (United States)

    de Waal, D. J.; Schoeman, J.

    2014-06-01

    The infrared band is widely used in many applications to solve problems stretching over very diverse fields, ranging from medical applications like inflammation detection to military, security and safety applications employing thermal imaging in low light conditions. At the heart of these optoelectrical systems lies a sensor used to detect incident infrared radiation, and in the case of this work our focus is on uncooled microbolometers as thermal detectors. Microbolometer based thermal detectors are limited in sensitivity by various parameters, including the detector layout and design, operating temperature, air pressure and biasing that causes self heating. Traditional microbolometers use the entire membrane surface for a single detector material. This work presents the design of a readout circuit amplifier where a dual detector element microbolometer is used, rather than the traditional single element. The concept to be investigated is based on the principle that both elements will be stimulated with a similar incoming IR signal and experience the same resistive change, thus creating a common mode signal. However, such a common mode signal will be rejected by a differential amplifier, thus one element is placed within a negative resistance converter to create a differential mode signal that is twice the magnitude of the comparable single mode signal of traditional detector designs. An instrumentation amplifier is used for the final stage of the readout amplifier circuit, as it allows for very high common mode rejection with proper trimming of the Wheatstone bridge to compensate for manufacturing tolerance. It was found that by implementing the above, improved sensitivity can be achieved.

  16. Theoretical modelling of electron transport in InAs/GaAs quantum dot superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Vukmirovic, Nenad; Ikonic, Zoran; Savic, Ivana; Indjin, Dragan; Harrison, Paul [School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT (United Kingdom)

    2006-07-01

    A theoretical model describing the electron transport in InAs/GaAs quantum dot infrared photodetectors, modelled as ideal quantum dot superlattices, is presented. The carrier wave functions and energy levels were evaluated using the strain dependent 8-band k.p Hamiltonian and used to calculate all intra- and inter-period transition rates due to interaction with phonons and electromagnetic radiation. The interaction with longitudinal acoustic phonons and electromagnetic radiation was treated perturbatively within the framework of Fermi's golden rule, while the interaction with longitudinal optical phonons was considered taking into account their strong coupling to electrons. The populations of energy levels were then found from a system of rate equations, and the electron current in the superlattice was subsequently extracted. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. MBE growth and characterisation of light rare-earth superlattices

    DEFF Research Database (Denmark)

    Ward, R.C.C.; Wells, M.R.; Bryn-Jacobsen, C.

    1996-01-01

    The molecular beam epitaxy growth techniques which have already successfully produced a range of heavy rare-earth superlattices have now been extended to produce superlattices of two light rare-earth elements, Nd/Pr, as well as superlattices and alloy films of a heavy/light system, Ho/Pr. High......-resolution X-ray diffraction analysis shows the Nd/Pr superlattices to be of high structural quality, while the Ho/Pr superlattices are significantly less so. In the Ho/Pr superlattices, Pr is found to retain its bulk dhcp crystal structure even in thin layers (down to 6 atomic planes thick) sandwiched between...... thick layers of hcp Ho. In addition, neutron diffraction studies of the He/Pr superlattices have shown that the helical Ho magnetic order is not coherent through the dhcp Pr layers, in contrast to previous hcp/hcp superlattices Ho/Y, Ho/Lu and Ho/Er. The series of Ho:Pr alloy films has shown structural...

  18. Quantitative x-ray structure determination of superlattices and interfaces

    International Nuclear Information System (INIS)

    Schuller, I.K.; Fullerton, E.E.

    1990-01-01

    This paper presents a general procedure for quantitative structural refinement of superlattice structures. To analyze a wide range of superlattices, the authors have derived a general kinematical diffraction formula that includes random, continuous and discrete fluctuations from the average structure. By implementing a non-linear fitting algorithm to fit the entire x-ray diffraction profile, refined parameters that describe the average superlattice structure, and deviations from this average are obtained. The structural refinement procedure is applied to a crystalline/crystalline Mo/Ni superlattices and crystalline/amorphous Pb/Ge superlattices. Roughness introduced artificially during growth in Mo/Ni superlattices is shown to be accurately reproduced by the refinement

  19. A new test facility for the E-ELT infrared detector program

    Science.gov (United States)

    Lizon, Jean Louis; Amico, Paola; Brinkmann, Martin; Delabre, Bernard; Finger, Gert; Guidolin, Ivan Maria; Guzman, Ronald; Hinterschuster, Renate; Ives, Derek; Klein, Barbara; Quattri, Marco

    2016-08-01

    During the development of the VLT instrumentation program, ESO acquired considerable expertise in the area of infrared detectors, their testing and optimizing their performance. This can mainly be attributed to a very competent team and most importantly to the availability of a very well suited test facility, namely, IRATEC. This test facility was designed more than 15 years ago, specifically for 1K × 1K detectors such as the Aladdin device, with a maximum field of only 30 mm square. Unfortunately, this facility is no longer suited for the testing of the new larger format detectors that are going to be used to equip the future E-ELT instruments. It is projected that over the next 20 years, there will be of the order of 50-100 very large format detectors to be procured and tested for use with E-ELT first and second generation instruments and VLT third generation instruments. For this reason ESO has initiated the in-house design and construction of a dedicated new IR detector arrays test facility: the Facility for Infrared Array Testing (FIAT). It will be possible to mount up to four 60 mm square detectors in the facility, as well as mosaics of smaller detectors. It is being designed to have a very low thermal background such that detectors with 5.3 μm cut-off material can routinely be tested. The paper introduces the most important use cases for which FIAT is designed: they range from performing routine performance measurements on acquired devices, optimization setups for custom applications (like spot scan intra-pixel response, persistence and surface reflectivity measurements), test of new complex operation modes (e.g. high speed subwindowing mode for low order sensing, flexure control, etc.) and the development of new tests and calibration procedures to support the scientific requirements of the E-ELT and to allow troubleshooting the unexpected challenges that arise when a new detector system is brought online. The facility is also being designed to minimize

  20. Non-invasive characterization and quality assurance of silicon micro-strip detectors using pulsed infrared laser

    Science.gov (United States)

    Ghosh, P.

    2016-01-01

    The Compressed Baryonic Matter (CBM) experiment at FAIR is composed of 8 tracking stations consisting of roughly 1300 double sided silicon micro-strip detectors of 3 different dimensions. For the quality assurance of prototype micro-strip detectors a non-invasive detector charaterization is developed. The test system is using a pulsed infrared laser for charge injection and characterization, called Laser Test System (LTS). The system is aimed to develop a set of characterization procedures which are non-invasive (non-destructive) in nature and could be used for quality assurances of several silicon micro-strip detectors in an efficient, reliable and reproducible way. The procedures developed (as reported here) uses the LTS to scan sensors with a pulsed infra-red laser driven by step motor to determine the charge sharing in-between strips and to measure qualitative uniformity of the sensor response over the whole active area. The prototype detector modules which are tested with the LTS so far have 1024 strips with a pitch of 58 μm on each side. They are read-out using a self-triggering prototype read-out electronic ASIC called n-XYTER. The LTS is designed to measure sensor response in an automatized procedure at several thousand positions across the sensor with focused infra-red laser light (spot size ≈ 12 μm, wavelength = 1060 nm). The pulse with a duration of ≈ 10 ns and power ≈ 5 mW of the laser pulse is selected such, that the absorption of the laser light in the 300 μm thick silicon sensor produces ≈ 24000 electrons, which is similar to the charge created by minimum ionizing particles (MIP) in these sensors. The laser scans different prototype sensors and various non-invasive techniques to determine characteristics of the detector modules for the quality assurance is reported.

  1. Stability of the spectral responsivity of cryogenically cooled InSb infrared detectors

    International Nuclear Information System (INIS)

    Theocharous, Evangelos

    2005-01-01

    The spectral responsivity of two cryogenically cooled InSb detectors was observed to drift slowly with time. The origin of these drifts was investigated and was shown to occur due to a water-ice thin film that was deposited onto the active areas of the cold detectors. The presence of the ice film (which is itself a dielectric film) modifies the transmission characteristics of the antireflection coatings deposited on the active areas of the detectors, thus giving rise to the observed drifts. The magnitude of the drifts was drastically reduced by evacuating the detector dewars while baking them at 50 deg. C for approximately 48 h. All InSb detectors have antireflection coatings to reduce the Fresnel reflections and therefore enhance their spectral responsivity. This work demonstrates that InSb infrared detectors should be evacuated and baked at least annually and in some cases (depending on the quality of the dewar and the measurement uncertainty required) more frequently. These observations are particularly relevant to InSb detectors mounted in dewars that use rubber O rings since the ingress of moisture was found to be particularly serious in this type of dewar

  2. Thermal Conductivity of Graphene-hBN Superlattice Ribbons.

    Science.gov (United States)

    Felix, Isaac M; Pereira, Luiz Felipe C

    2018-02-09

    Superlattices are ideal model systems for the realization and understanding of coherent (wave-like) and incoherent (particle-like) phonon thermal transport. Single layer heterostructures of graphene and hexagonal boron nitride have been produced recently with sharp edges and controlled domain sizes. In this study we employ nonequilibrium molecular dynamics simulations to investigate the thermal conductivity of superlattice nanoribbons with equal-sized domains of graphene and hexagonal boron nitride. We analyze the dependence of the conductivity with the domain sizes, and with the total length of the ribbons. We determine that the thermal conductivity reaches a minimum value of 89 W m -1 K -1 for ribbons with a superlattice period of 3.43 nm. The effective phonon mean free path is also determined and shows a minimum value of 32 nm for the same superlattice period. Our results also reveal that a crossover from coherent to incoherent phonon transport is present at room temperature for BNC nanoribbons, as the superlattice period becomes comparable to the phonon coherence length. Analyzing phonon populations relative to the smallest superlattice period, we attribute the minimum thermal conductivity to a reduction in the population of flexural phonons when the superlattice period equals 3.43 nm. The ability to manipulate thermal conductivity using superlattice-based two-dimensional materials, such as graphene-hBN nanoribbons, opens up opportunities for application in future nanostructured thermoelectric devices.

  3. Barrier Engineered Quantum Dot Infrared Photodetectors

    Science.gov (United States)

    2015-06-01

    251108. 6. Barve, Ajit V., Saumya Sengupta, Jun Oh Kim, John Montoya , Brianna Klein, Mohammad Ali Shirazi, Marziyeh Zamiri et al., "Barrier selection... H . Kim, Z-B. Tian, and Sanjay Krishna. "Barrier Engineered Infrared Photodetectors Based on Type-II InAs/GaSb Strained Layer Superlattices." (2013

  4. Anisotropic behavior of quantum transport in graphene superlattices

    DEFF Research Database (Denmark)

    Pedersen, Jesper Goor; Cummings, Aron W.; Roche, Stephan

    2014-01-01

    We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multi......We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength...

  5. Magnetic structure of holmium-yttrium superlattices

    DEFF Research Database (Denmark)

    Jehan, D.A.; McMorrow, D.F.; Cowley, R.A.

    1993-01-01

    We present the results of a study of the chemical and magnetic structures of a series of holmium-yttrium superlattices and a 5000 angstrom film of holmium, all grown by molecular-beam epitaxy. By combining the results of high-resolution x-ray diffraction with detailed modeling, we show...... that the superlattices have high crystallographic integrity: the structural coherence length parallel to the growth direction is typically almost-equal-to 2000 angstrom, while the interfaces between the two elements are well defined and extend over approximately four lattice planes. The magnetic structures were...... determined using neutron-scattering techniques. The moments on the Ho3+ ions in the superlattices form a basal-plane helix. From an analysis of the superlattice structure factors of the primary magnetic satellites, we are able to determine separately the contributions made by the holmium and yttrium...

  6. Plasmon Modes of Vertically Aligned Superlattices

    DEFF Research Database (Denmark)

    Filonenko, Konstantin; Duggen, Lars; Willatzen, Morten

    2017-01-01

    By using the Finite Element Method we visualize the modes of vertically aligned superlattice composed of gold and dielectric nanocylinders and investigate the emitter-plasmon interaction in approximation of weak coupling. We find that truncated vertically aligned superlattice can function...

  7. Surface electron structure of short-period semiconductor superlattice

    International Nuclear Information System (INIS)

    Bartos, I.; Czech Academy Science, Prague,; Strasser, T.; Schattke, W.

    2004-01-01

    Full text: Semiconductor superlattices represent man-made crystals with unique physical properties. By means of the directed layer-by-layer molecular epitaxy growth their electric properties can be tailored (band structure engineering). Longer translational periodicity in the growth direction is responsible for opening of new electron energy gaps (minigaps) with surface states and resonances localized at superlattice surfaces. Similarly as for the electron structure of the bulk, a procedure enabling to modify the surface electron structure of superlattices is desirable. Short-period superlattice (GaAs) 2 (AlAs) 2 with unreconstructed (100) surface is investigated in detail. Theoretical description in terms of full eigenfunctions of individual components has to be used. The changes of electron surface state energies governed by the termination of a periodic crystalline potential, predicted on simple models, are confirmed for this system. Large surface state shifts are found in the lowest minigap of the superlattice when this is terminated in four different topmost layer configurations. The changes should be observable in angle resolved photoelectron spectroscopy as demonstrated in calculations based on the one step model of photoemission. Surface state in the center of the two dimensional Brillouin zone moves from the bottom of the minigap (for the superlattice terminated by two bilayers of GaAs) to its top (for the superlattice terminated by two bilayers of AlAs) where it becomes a resonance. No surface state/resonance is found for a termination with one bilayer of AlAs. The surface state bands behave similarly in the corresponding gaps of the k-resolved section of the electron band structure. The molecular beam epitaxy, which enables to terminate the superlattice growth with atomic layer precision, provides a way of tuning the superlattice surface electron structure by purely geometrical means. The work was supported by the Grant Agency of the Academy of Sciences

  8. Design of a multiband near-infrared sky brightness monitor using an InSb detector.

    Science.gov (United States)

    Dong, Shu-Cheng; Wang, Jian; Tang, Qi-Jie; Jiang, Feng-Xin; Chen, Jin-Ting; Zhang, Yi-Hao; Wang, Zhi-Yue; Chen, Jie; Zhang, Hong-Fei; Jiang, Hai-Jiao; Zhu, Qing-Feng; Jiang, Peng; Ji, Tuo

    2018-02-01

    Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

  9. Design of a multiband near-infrared sky brightness monitor using an InSb detector

    Science.gov (United States)

    Dong, Shu-cheng; Wang, Jian; Tang, Qi-jie; Jiang, Feng-xin; Chen, Jin-ting; Zhang, Yi-hao; Wang, Zhi-yue; Chen, Jie; Zhang, Hong-fei; Jiang, Hai-jiao; Zhu, Qing-feng; Jiang, Peng; Ji, Tuo

    2018-02-01

    Infrared sky background level is an important parameter of infrared astronomy observations from the ground, particularly for a candidate site of an infrared capable observatory since low background level is required for such a site. The Chinese astronomical community is looking for a suitable site for a future 12 m telescope, which is designed for working in both optical and infrared wavelengths. However, none of the proposed sites has been tested for infrared observations. Nevertheless, infrared sky background measurements are also important during the design of infrared observing instruments. Based on the requirement, in order to supplement the current site survey data and guide the design of future infrared instruments, a multiband near-infrared sky brightness monitor (MNISBM) based on an InSb sensor is designed in this paper. The MNISBM consists of an optical system, mechanical structure and control system, detector and cooler, high gain readout electronics, and operational software. It is completed and tested in the laboratory. The results show that the sensitivity of the MNISBM meets the requirements of the measurement of near-infrared sky background level of several well-known astronomical infrared observing sites.

  10. Commentary: JWST near-infrared detector degradation— finding the problem, fixing the problem, and moving forward

    Directory of Open Access Journals (Sweden)

    Bernard J. Rauscher

    2012-06-01

    Full Text Available The James Webb Space Telescope (JWST is the successor to the Hubble Space Telescope. JWST will be an infrared-optimized telescope, with an approximately 6.5 m diameter primary mirror, that is located at the Sun-Earth L2 Lagrange point. Three of JWST’s four science instruments use Teledyne HgCdTe HAWAII-2RG (H2RG near infrared detector arrays. During 2010, the JWST Project noticed that a few of its 5 μm cutoff H2RG detectors were degrading during room temperature storage, and NASA chartered a “Detector Degradation Failure Review Board” (DD-FRB to investigate. The DD-FRB determined that the root cause was a design flaw that allowed indium to interdiffuse with the gold contacts and migrate into the HgCdTe detector layer. Fortunately, Teledyne already had an improved design that eliminated this degradation mechanism. During early 2012, the improved H2RG design was qualified for flight and JWST began making additional H2RGs. In this article, we present the two public DD-FRB “Executive Summaries” that: (1 determined the root cause of the detector degradation and (2 defined tests to determine whether the existing detectors are qualified for flight. We supplement these with a brief introduction to H2RG detector arrays, some recent measurements showing that the performance of the improved design meets JWST requirements, and a discussion of how the JWST Project is using cryogenic storage to retard the degradation rate of the existing flight spare H2RGs.

  11. Examination of cotton fibers and common contaminants using an infrared microscope and a focal-plane array detector

    Science.gov (United States)

    The chemical imaging of cotton fibers and common contaminants in fibers is presented. Chemical imaging was performed with an infrared microscope equipped with a Focal-Plane Array (FPA) detector. Infrared spectroscopy can provide us with information on the structure and quality of cotton fibers. In a...

  12. Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

    Science.gov (United States)

    Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

    2016-09-01

    In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

  13. Advanced far infrared detectors

    International Nuclear Information System (INIS)

    Haller, E.E.

    1993-05-01

    Recent advances in photoconductive and bolometric semiconductor detectors for wavelength 1 mm > λ > 50 μm are reviewed. Progress in detector performance in this photon energy range has been stimulated by new and stringent requirements for ground based, high altitude and space-borne telescopes for astronomical and astrophysical observations. The paper consists of chapters dealing with the various types of detectors: Be and Ga doped Ge photoconductors, stressed Ge:Ga devices and neutron transmutation doped Ge thermistors. Advances in the understanding of basic detector physics and the introduction of modern semiconductor device technology have led to predictable and reliable fabrication techniques. Integration of detectors into functional arrays has become feasible and is vigorously pursued by groups worldwide

  14. Tunneling of electrons through semiconductor superlattices

    Indian Academy of Sciences (India)

    Unknown

    Tunneling of electrons through semiconductor superlattices. C L ROY. Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India. Abstract. The purpose of the present paper is to report a study of tunneling of electrons through semicon- ductor superlattices (SSL); specially, we have ...

  15. Photostimulated attenuation of hypersound in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.; Adjepong, S.K.

    1992-10-01

    Photostimulated attenuation of hypersound in semiconductor superlattice has been investigated. It is shown that the attenuation coefficient depends on the phonon wave vector q in an oscillatory manner and that from this oscillation the band width Δ of superlattice can be found. (author). 14 refs, 1 fig

  16. Can graphene make better HgCdTe infrared detectors?

    Directory of Open Access Journals (Sweden)

    Shi Yanli

    2011-01-01

    Full Text Available Abstract We develop a simple and low-cost technique based on chemical vapor deposition from which large-size graphene films with 5-10 graphene layers can be produced reliably and the graphene films can be transferred easily onto HgCdTe (MCT thin wafers at room temperature. The proposed technique does not cause any thermal and mechanical damages to the MCT wafers. It is found that the averaged light transmittance of the graphene film on MCT thin wafer is about 80% in the mid-infrared bandwidth at room temperature and 77 K. Moreover, we find that the electrical conductance of the graphene film on the MCT substrate is about 25 times larger than that of the MCT substrate at room temperature and 77 K. These experimental findings suggest that, from a physics point of view, graphene can be utilized as transparent electrodes as a replacement for metal electrodes while producing better and cheaper MCT infrared detectors.

  17. Dissipative chaos in semiconductor superlattices

    Directory of Open Access Journals (Sweden)

    F. Moghadam

    2008-03-01

    Full Text Available In this paper the motion of electron in a miniband of a semiconductor superlattice (SSL under the influence of external electric and magnetic fields is investigated. The electric field is applied in a direction perpendicular to the layers of the semiconductor superlattice, and the magnetic field is applied in different direction Numerical calculations show conditions led to the possibility of chaotic behaviors.

  18. Analysis of the performance capability of an infrared interior intrusion detector

    International Nuclear Information System (INIS)

    Dunn, D.R.

    1977-01-01

    Component performances are required by the LLL assessment procedure for material control and accounting (MC and A) systems. Monitors are an example of an MC and A component whose functions are to process measurements or observations for purposes of detecting abnormalities. This report develops a methodology for characterizing the performance of a class of infrared (IR) interior intrusion monitors or detectors. The methodology is developed around a specific commercial IR detector, the InfrAlarm, manufactured by Barnes Engineering Company (Models 19-124 and 19-115A). Statistical detection models for computing probabilities of detection and false alarms were derived, and the performance capability of the InfrAlarm IR detector was shown using these measures. The results obtained in the performance analysis show that the detection capability of the InfrAlarm is excellent (approx. 1), with very low false alarm rates, for a wide range in target characteristics. These results should be representative and particularly for non-hostile environments

  19. Optical properties of InAs/GaAs quantum dot superlattice structures

    Science.gov (United States)

    Imran, Ali; Jiang, Jianliang; Eric, Deborah; Zahid, M. Noaman; Yousaf, M.; Shah, Z. H.

    2018-06-01

    Quantum dot (QD) structure has potential applications in modern highly efficient optoelectronic devices due to their band-tuning. The device dimensions have been miniatured with increased efficiencies by virtue of this discovery. In this research, we have presented modified analytical and simulation results of InAs/GaAs QD superlattice (QDSL). We have applied tight binding model for the investigation of ground state energies using timeindependent Schrödinger equation (SE) with effective mass approximation. It has been investigated that the electron energies are confined due to wave function delocalization in closely coupled QD structures. The minimum ground state energy can be obtained by increasing the periodicity and decreasing the barrier layer thickness. We have calculated electronics and optical properties which includes ground state energies, transition energies, density of states (DOS), absorption coefficient and refractive index, which can be tuned by structure modification. In our results, the minimum ground state energy of QDSL is achieved to be 0.25 eV with a maximum period of 10 QDs. The minimum band to band and band to continuum transition energies are 63 meV and 130 meV with 2 nm barrier layer thickness respectively. The absorption coefficient of our proposed QDSL model is found to be maximum 1.2 × 104 cm-1 and can be used for highly sensitive infrared detector and high efficiency solar cells.

  20. Topotactic interconversion of nanoparticle superlattices.

    Science.gov (United States)

    Macfarlane, Robert J; Jones, Matthew R; Lee, Byeongdu; Auyeung, Evelyn; Mirkin, Chad A

    2013-09-13

    The directed assembly of nanoparticle building blocks is a promising method for generating sophisticated three-dimensional materials by design. In this work, we have used DNA linkers to synthesize nanoparticle superlattices that have greater complexity than simple binary systems using the process of topotactic intercalation-the insertion of a third nanoparticle component at predetermined sites within a preformed binary lattice. Five distinct crystals were synthesized with this methodology, three of which have no equivalent in atomic or molecular crystals, demonstrating a general approach for assembling highly ordered ternary nanoparticle superlattices whose structures can be predicted before their synthesis. Additionally, the intercalation process was demonstrated to be completely reversible; the inserted nanoparticles could be expelled into solution by raising the temperature, and the ternary superlattice could be recovered by cooling.

  1. Ground state energy of a polaron in a superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Nkrumah, G.; Mensah, N.G.

    2000-10-01

    The ground state energy of a polaron in a superlattice was calculated using the double-time Green functions. The effective mass of the polaron along the planes perpendicular to the superlattice axis was also calculated. The dependence of the ground state energy and the effective mass along the planes perpendicular to the superlattice axis on the electron-phonon coupling constant α and on the superlattice parameters (i.e. the superlattice period d and the bandwidth Δ) were studied. It was observed that if an infinite square well potential is assumed, the ground state energy of the polaron decreases (i.e. becomes more negative) with increasing α and d, but increases with increasing Δ. For small values of α, the polaron ground state energy varies slowly with Δ, becoming approximately constant for large Δ. The effective mass along the planes perpendicular to the superlattice axis was found to be approximately equal to the mass of an electron for all typical values of α, d and Δ. (author)

  2. Investigation of switching region in superlattice phase change memories

    Science.gov (United States)

    Ohyanagi, T.; Takaura, N.

    2016-10-01

    We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 μ A .

  3. Epitaxy, thin films and superlattices

    International Nuclear Information System (INIS)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au)

  4. Epitaxy, thin films and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Jagd Christensen, Morten

    1997-05-01

    This report is the result of structural investigations of 3d transition metal superlattices consisting of Fe/V, Cr/Mn, V/Mn and Fe/Mn, and a structural and magnetic study of a series of Ho/Pr alloys. The work includes preparation and characterization of substrates as well as growth of thin films and Fe/V superlattices by molecular beam epitaxy, including in-situ characterization by reflection high energy electron diffraction and Auger electron spectroscopy. Structural characterization has been done by x-ray diffraction and neutron diffraction. The x-ray diffraction experiments have been performed on the rotating copper anode at Risoe, and at synchrotron facilities in Hamburg and Brookhaven, and the neutron scattering was done at the Danish research reactor DR3 at Risoe. In addition to longitudinal scans, giving information about the structural parameters in the modulation direction, non-specular scans were also performed. This type of scans gives information about in-plane orientation and lattice parameters. From the analysis, structural information is obtained about lattice parameters, epitaxial strain, coherence lengths and crystallographic orientation for the superlattice systems, except Fe/Mn superlattices, which could not be modelled. For the Ho/Pr alloys, x-ray magnetic scattering was performed, and the crystal and magnetic structure was investigated. (au) 14 tabs.; 58 ills., 96 refs.

  5. The solitary electromagnetic waves in the graphene superlattice

    International Nuclear Information System (INIS)

    Kryuchkov, Sergey V.; Kukhar', Egor I.

    2013-01-01

    d’Alembert equation written for the electromagnetic waves propagating in the graphene superlattice is analyzed. The possibility of the propagation of the solitary electromagnetic waves in the graphene superlattice is discussed. The amplitude and the width of the electromagnetic pulse are calculated. The drag current induced by such wave across the superlattice axis is investigated. The numerical estimate of the charge dragged by the solitary wave is made.

  6. Picosecond electron bunches from GaAs/GaAsP strained superlattice photocathode

    International Nuclear Information System (INIS)

    Jin, Xiuguang; Matsuba, Shunya; Honda, Yosuke; Miyajima, Tsukasa; Yamamoto, Masahiro; Utiyama, Takashi; Takeda, Yoshikazu

    2013-01-01

    GaAs/GaAsP strained superlattices are excellent candidates for use as spin-polarized electron sources. In the present study, picosecond electron bunches were successfully generated from such a superlattice photocathode. However, electron transport in the superlattice was much slower than in bulk GaAs. Transmission electron microscopy observations revealed that a small amount of variations in the uniformity of the layers was present in the superlattice. These variations lead to fluctuations in the superlattice mini-band structure and can affect electron transport. Thus, it is expected that if the periodicity of the superlattice can be improved, much faster electron bunches can be produced. - Highlights: • GaAs/GaAsP strained superlattices are excellent candidates for spin-polarized electron beam. • Pulse spin-polarized electron beam is required for investigating the magnetic domain change. • Picosecond electron bunches were achieved from GaAs/GaAsP superlattice photocathode. • TEM observation revealed a small disorder of superlattice layers. • Improvement of superlattice periodicity can achieve much faster electron bunches

  7. Microwave absorption in YBCO/PrBCO superlattices

    International Nuclear Information System (INIS)

    Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

    1992-01-01

    In this paper, non-resonant microwave absorption is employed to probe YBCO/PrBCO superlattices and compare the response to that of a YBCO film. Near the transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependencies. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependencies, which the authors attribute to the role of the PrBCO layers

  8. Theory of photoresistors on the base of trapezoidal δ-doped superlattices

    International Nuclear Information System (INIS)

    Osipov, V.V.; Selyakov, A.Yu.; Foygel, M.

    1999-01-01

    A theory of far infrared photoresistors that is based on trapezoidal δ-doped superlattices (TSL) has been developed. It is shown that photoconductivity of TSL in monopolar despite the interband absorption and generation of electron - hole pairs. In this way, photoelectric gain and responsivity of TSL photoresistor can reach gigantic values. It is established that tunneling-radiative lifetime of electron-hole pairs determines the kinetics of photoconductivity decay. It is shown that a surprising effect takes place: voltage responsivity does not depend virtually on lifetime of nonequilibrium carriers and on the doping level of TSL photoresistor and can reach gigantic values [ru

  9. Advances in SELEX ES infrared detectors for space and astronomy

    Science.gov (United States)

    Knowles, P.; Hipwood, L.; Baker, I.; Weller, H.

    2017-11-01

    Selex ES produces a wide range of infrared detectors from mercury cadmium telluride (MCT) and triglycine sulfate (TGS), and has supplied both materials into space programmes spanning a period of over 40 years. Current development activities that underpin potential future space missions include large format arrays for near- and short-wave infrared (NIR and SWIR) incorporating radiation-hard designs and suppression of glow. Improved heterostructures are aimed at the reduction of dark currents and avalanche photodiodes (APDs), and parallel studies have been undertaken for low-stress MCT array mounts. Much of this development work has been supported by ESA, UK Space, and ESO, and some has been performed in collaboration with the UK Astronomy Technology Centre and E2V. This paper focuses on MCT heterostructure developments and novel design elements in silicon read-out chips (ROICs). The 2048 x 2048 element, 17um pitch ROIC for ESA's SWIR array development forms the basis for the largest cooled infrared detector manufactured in Europe. Selex ES MCT is grown by metal organic vapour phase epitaxy (MOVPE), currently on 75mm diameter GaAs substrates. The MCT die size of the SWIR array is 35mm square and only a single array can be printed on the 75mm diameter wafer, utilising only 28% of the wafer area. The situation for 100mm substrates is little better, allowing only 2 arrays and 31% utilisation. However, low cost GaAs substrates are readily available in 150mm diameter and the MCT growth is scalable to this size, offering the real possibility of 6 arrays per wafer with 42% utilisation. A similar 2k x 2k ROIC is the goal of ESA's NIR programme, which is currently in phase 2 with a 1k x 1k demonstrator, and a smaller 320 x 256 ROIC (SAPHIRA) has been designed for ESO for the adaptive optics application in the VLT Gravity instrument. All 3 chips have low noise source-follower architecture and are enabled for MCT APD arrays, which have been demonstrated by ESO to be capable of

  10. Leaky electronic states for photovoltaic photodetectors based on asymmetric superlattices

    Science.gov (United States)

    Penello, Germano Maioli; Pereira, Pedro Henrique; Pires, Mauricio Pamplona; Sivco, Deborah; Gmachl, Claire; Souza, Patricia Lustoza

    2018-01-01

    The concept of leaky electronic states in the continuum is used to achieve room temperature operation of photovoltaic superlattice infrared photodetectors. A structural asymmetric InGaAs/InAlAs potential profile is designed to create states in the continuum with the preferential direction for electron extraction and, consequently, to obtain photovoltaic operation at room temperature. Due to the photovoltaic operation and virtual increase in the bandoffset, the device presents both low dark current and low noise. The Johnson noise limited specific detectivity reaches values as high as 1.4 × 1011 Jones at 80 K. At 300 K, the detectivity obtained is 7.0 × 105 Jones.

  11. Electronic properties of superlattices on quantum rings.

    Science.gov (United States)

    da Costa, D R; Chaves, A; Ferreira, W P; Farias, G A; Ferreira, R

    2017-04-26

    We present a theoretical study of the one-electron states of a semiconductor-made quantum ring (QR) containing a series of piecewise-constant wells and barriers distributed along the ring circumference. The single quantum well and the superlattice cases are considered in detail. We also investigate how such confining potentials affect the Aharonov-Bohm like oscillations of the energy spectrum and current in the presence of a magnetic field. The model is simple enough so as to allow obtaining various analytical or quasi-analytical results. We show that the well-in-a-ring structure presents enhanced localization features, as well as specific geometrical resonances in its above-barrier spectrum. We stress that the superlattice-in-a-ring structure allows giving a physical meaning to the often used but usually artificial Born-von-Karman periodic conditions, and discuss in detail the formation of energy minibands and minigaps for the circumferential motion, as well as several properties of the superlattice eigenstates in the presence of the magnetic field. We obtain that the Aharonov-Bohm oscillations of below-barrier miniband states are reinforced, owing to the important tunnel coupling between neighbour wells of the superlattice, which permits the electron to move in the ring. Additionally, we analysis a superlattice-like structure made of a regular distribution of ionized impurities placed around the QR, a system that may implement the superlattice in a ring idea. Finally, we consider several random disorder models, in order to study roughness disorder and to tackle the robustness of some results against deviations from the ideally nanostructured ring system.

  12. Dielectric function of semiconductor superlattice

    International Nuclear Information System (INIS)

    Qin Guoyi.

    1990-08-01

    We present a calculation of the dielectric function for semiconductor GaAs/Ga 1-x Al x As superlattice taking account of the extension of the electron envelope function and the difference of both the dielectric constant and width between GaAs and Ga 1-x Al x As layers. In the appropriate limits, our results exactly reduce to the well-known results of the quasi two-dimensional electron gas obtained by Lee and Spector and of the period array of two-dimensional electron layers obtained by Das Sarma and Quinn. By means of the dielectric function of the superlattice, the dispersion relation of the collective excitation and the screening property of semiconductor superlattice are discussed and compared with the results of the quasi two-dimensional system and with the results of the periodic array of the two-dimensional electron layers. (author). 4 refs, 3 figs

  13. ZnSe/ZnSeTe Superlattice Nanotips

    Directory of Open Access Journals (Sweden)

    Young SJ

    2010-01-01

    Full Text Available Abstract The authors report the growth of ZnSe/ZnSeTe superlattice nanotips on oxidized Si(100 substrate. It was found the nanotips exhibit mixture of cubic zinc-blende and hexagonal wurtzite structures. It was also found that photoluminescence intensities observed from the ZnSe/ZnSeTe superlattice nanotips were much larger than that observed from the homogeneous ZnSeTe nanotips. Furthermore, it was found that activation energies for the ZnSe/ZnSeTe superlattice nanotips with well widths of 16, 20, and 24 nm were 76, 46, and 19 meV, respectively.

  14. nBn Infrared Detector Containing Graded Absorption Layer

    Science.gov (United States)

    Gunapala, Sarath D.; Ting, David Z.; Hill, Cory J.; Bandara, Sumith V.

    2009-01-01

    It has been proposed to modify the basic structure of an nBn infrared photodetector so that a plain electron-donor- type (n-type) semiconductor contact layer would be replaced by a graded n-type III V alloy semiconductor layer (i.e., ternary or quarternary) with appropriate doping gradient. The abbreviation nBn refers to one aspect of the unmodified basic device structure: There is an electron-barrier ("B" ) layer between two n-type ("n" ) layers, as shown in the upper part of the figure. One of the n-type layers is the aforementioned photon-absorption layer; the other n-type layer, denoted the contact layer, collects the photocurrent. The basic unmodified device structure utilizes minority-charge-carrier conduction, such that, for reasons too complex to explain within the space available for this article, the dark current at a given temperature can be orders of magnitude lower (and, consequently, signal-to-noise ratios can be greater) than in infrared detectors of other types. Thus, to obtain a given level of performance, less cooling (and, consequently, less cooling equipment and less cooling power) is needed. [In principle, one could obtain the same advantages by means of a structure that would be called pBp because it would include a barrier layer between two electron-acceptor- type (p-type) layers.] The proposed modifications could make it practical to utilize nBn photodetectors in conjunction with readily available, compact thermoelectric coolers in diverse infrared- imaging applications that could include planetary exploration, industrial quality control, monitoring pollution, firefighting, law enforcement, and medical diagnosis.

  15. Detector with internal gain for short-wave infrared ranging applications

    Science.gov (United States)

    Fathipour, Vala; Mohseni, Hooman

    2017-09-01

    Abstarct.Highly sensitive photon detectors are regarded as the key enabling elements in many applications. Due to the low photon energy at the short-wave infrared (SWIR), photon detection and imaging at this band are very challenging. As such, many efforts in photon detector research are directed toward improving the performance of the photon detectors operating in this wavelength range. To solve these problems, we have developed an electron-injection (EI) technique. The significance of this detection mechanism is that it can provide both high efficiency and high sensitivity at room temperature, a condition that is very difficult to achieve in conventional SWIR detectors. An EI detector offers an overall system-level sensitivity enhancement due to a feedback stabilized internal avalanche-free gain. Devices exhibit an excess noise of unity, operate in linear mode, require bias voltage of a few volts, and have a cutoff wavelength of 1700 nm. We review the material system, operating principle, and development of EI detectors. The shortcomings of the first-generation devices were addressed in the second-generation detectors. Measurement on second-generation devices showed a high-speed response of ˜6 ns rise time, low jitter of less than 20 ps, high amplification of more than 2000 (at optical power levels larger than a few nW), unity excess noise factor, and low leakage current (amplified dark current ˜10 nA at a bias voltage of -3 V and at room temperature. These characteristics make EI detectors a good candidate for high-resolution flash light detection and ranging (LiDAR) applications with millimeter scale depth resolution at longer ranges compared with conventional p-i-n diodes. Based on our experimentally measured device characteristics, we compare the performance of the EI detector with commercially available linear mode InGaAs avalanche photodiode (APD) as well as a p-i-n diode using a theoretical model. Flash LiDAR images obtained by our model show that the EI

  16. Superlattice design for optimal thermoelectric generator performance

    Science.gov (United States)

    Priyadarshi, Pankaj; Sharma, Abhishek; Mukherjee, Swarnadip; Muralidharan, Bhaskaran

    2018-05-01

    We consider the design of an optimal superlattice thermoelectric generator via the energy bandpass filter approach. Various configurations of superlattice structures are explored to obtain a bandpass transmission spectrum that approaches the ideal ‘boxcar’ form, which is now well known to manifest the largest efficiency at a given output power in the ballistic limit. Using the coherent non-equilibrium Green’s function formalism coupled self-consistently with the Poisson’s equation, we identify such an ideal structure and also demonstrate that it is almost immune to the deleterious effect of self-consistent charging and device variability. Analyzing various superlattice designs, we conclude that superlattice with a Gaussian distribution of the barrier thickness offers the best thermoelectric efficiency at maximum power. It is observed that the best operating regime of this device design provides a maximum power in the range of 0.32–0.46 MW/m 2 at efficiencies between 54%–43% of Carnot efficiency. We also analyze our device designs with the conventional figure of merit approach to counter support the results so obtained. We note a high zT el   =  6 value in the case of Gaussian distribution of the barrier thickness. With the existing advanced thin-film growth technology, the suggested superlattice structures can be achieved, and such optimized thermoelectric performances can be realized.

  17. Optical and vibrational properties of (ZnO){sub k} In{sub 2}O{sub 3} natural superlattice nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Margueron, Samuel [Laboratoire Matériaux Optiques, Photonique et Systèmes, Université de Lorraine et CentraleSupélec, 57070 Metz (France); John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States); Pokorny, Jan; Skiadopoulou, Stella; Kamba, Stanislav [Institute of Physics, Czech Academy of Sciences, Na Slovance 2, 182 21 Prague 8 (Czech Republic); Liang, Xin [School of Materials Science and Engineering, Changzhou University, Changzhou, Jiangsu Province 213164 (China); Clarke, David R. [John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Maryland 02138 (United States)

    2016-05-21

    A thermodynamically stable series of superlattices, (ZnO){sub k}In{sub 2}O{sub 3}, form in the ZnO-In{sub 2}O{sub 3} binary oxide system for InO{sub 1.5} concentrations from about 13 up to about 33 mole percent (m/o). These natural superlattices, which consist of a periodic stacking of single, two-dimensional sheets of InO{sub 6} octahedra, are found to give rise to systematic changes in the optical and vibrational properties of the superlattices. Low-frequency Raman scattering provides the evidence for the activation of acoustic phonons due to the folding of Brillouin zone. New vibrational modes at 520 and 620 cm{sup −1}, not present in either ZnO or In{sub 2}O{sub 3}, become Raman active. These new modes are attributed to collective plasmon oscillations localized at the two-dimensional InO{sub 1.5} sheets. Infrared reflectivity experiments, and simulations taking into account a negative dielectric susceptibility due to electron carriers in ZnO and interface modes of the dielectric layer of InO{sub 2}, explain the occurrence of these new modes. We postulate that a localized electron gas forms at the ZnO/InO{sub 2} interface due to the electron band alignment and polarization effects. All our observations suggest that there are quantum contributions to the thermal and electrical conductivity in these natural superlattices.

  18. Passive high-frequency devices based on superlattice ferromagnetic nanowires

    International Nuclear Information System (INIS)

    Ye, B.; Li, F.; Cimpoesu, D.; Wiley, J.B.; Jung, J.-S.; Stancu, A.; Spinu, L.

    2007-01-01

    In this paper we propose to tailor the bandwidth of a microwave filter by exploitation of shape anisotropy of nanowires. In order to achieve this control of shape anisotropy, we considered superlattice wires containing varying-sized ferromagnetic regions separated by nonferromagnetic regions. Superlattice wires of Ni and Au with a nominal diameter of 200 nm were grown using standard electrodeposition techniques. The microwave properties were probed using X-band (9.8 GHz) ferromagnetic resonance (FMR) experiments performed at room temperature. In order to investigate the effectiveness of the shape anisotropy on the superlattice nanowire based filter the FMR spectrum of superlattice structure is compared to the FMR spectra of nanowires samples with constant length

  19. Fast infrared array spectrometer with a thermoelectrically cooled 160-element PbSe detector

    International Nuclear Information System (INIS)

    Ji Jun; Gore, Jay P.; Sivathanu, Yudaya R.; Lim, Jongmook

    2004-01-01

    A fast infrared array spectrometer (FIAS) with a thermoelectrically cooled 160-element PbSe detector was demonstrated using measurements of instantaneous infrared radiation intensities simultaneously over the 1.8-4.9 μm wavelength range at a sampling rate of 390 Hz. A three-point second-degree Lagrange interpolation polynomial was constructed to calibrate the FIAS because of the nonlinear response of the infrared array detector to the incident radiation beam. This calibration method gave excellent measurements of blackbody radiation spectra except for a narrow band at wavelength of 4.3 μm due to absorption by room carbon dioxide, which is one of the two major gas radiation peaks (2.7 and 4.3 μm) from the lean premixed hydrocarbon/air combustion products in the midinfrared spectrum. Therefore, the absorption coefficient of room carbon dioxide was conveniently measured on site with the blackbody reference source, and was used in the calibration of the FIAS and also in the calculations of the radiation spectra. Blackbody tests showed that this procedure was effective in correcting for the room carbon dioxide absorption in the radiation spectra measured by the FIAS. For an example of its application, the calibrated FIAS was used to measure spectral radiation intensities from three lean premixed laminar flames and a premixed turbulent jet flame for which reference data with a grating spectrometer were available for comparison. The agreement between the FIAS measurements and the reference data was excellent

  20. Split detector

    International Nuclear Information System (INIS)

    Cederstrand, C.N.; Chism, H.R.

    1982-01-01

    A gas analyzer is disclosed which provides a dual channel capability for the simultaneous determination of the presence and concentration of two gases in a stream of sample gas and which has a single infrared source, a single sample cell, two infrared bandpass filters, and two infrared detectors. A separator between the filters and detectors prevents interchange of radiation between the filters. The separator is positioned by fitting it in a slot

  1. Magnetic superlattices

    International Nuclear Information System (INIS)

    Kwo, J.; Hong, M.; McWhan, D.B.; Yafet, Y.; Fleming, R.M.; DiSalvo, F.J.; Waszczak, J.V.; Majkrzak, C.F.; Gibbs, D.; Goldmann, A.I.; Boni, P.; Bohr, J.; Grimm, H.; Bohr, J.; Chien, C.L.; Grimm, H.; Cable, J.W.

    1988-01-01

    Single crystal magnetic rare earth superlattices were synthesized by molecular beam epitaxy. The studies include four rare earth systems: Gd-Y, Dy-Y, Ho-Y, and Gd-Dy. The magnetic properties and the long-range spin order are reviewed in terms of the interfacial behavior, and the interlayer exchange coupling across Y medium

  2. Theoretical study of nitride short period superlattices

    Science.gov (United States)

    Gorczyca, I.; Suski, T.; Christensen, N. E.; Svane, A.

    2018-02-01

    Discussion of band gap behavior based on first principles calculations of electronic band structures for various short period nitride superlattices is presented. Binary superlattices, as InN/GaN and GaN/AlN as well as superlattices containing alloys, as InGaN/GaN, GaN/AlGaN, and GaN/InAlN are considered. Taking into account different crystallographic directions of growth (polar, semipolar and nonpolar) and different strain conditions (free-standing and pseudomorphic) all the factors influencing the band gap engineering are analyzed. Dependence on internal strain and lattice geometry is considered, but the main attention is devoted to the influence of the internal electric field and the hybridization of well and barrier wave functions. The contributions of these two important factors to band gap behavior are illustrated and estimated quantitatively. It appears that there are two interesting ranges of layer thicknesses; in one (few atomic monolayers in barriers and wells) the influence of the wave function hybridization is dominant, whereas in the other (layers thicker than roughly five to six monolayers) dependence of electric field on the band gaps is more important. The band gap behavior in superlattices is compared with the band gap dependence on composition in the corresponding ternary and quaternary alloys. It is shown that for superlattices it is possible to exceed by far the range of band gap values, which can be realized in ternary alloys. The calculated values of the band gaps are compared with the photoluminescence emission energies, when the corresponding data are available. Finally, similarities and differences between nitride and oxide polar superlattices are pointed out by comparison of wurtzite GaN/AlN and ZnO/MgO.

  3. Mixing of III-V compound semiconductor superlattices

    International Nuclear Information System (INIS)

    Mei, Ping.

    1989-01-01

    In this work, the methods as well as mechanisms of III-V compound superlattice mixing are discussed, with particular attention on the AlGaAs based superlattice system. Comparative studies of ion-induced mixing showed two distinct effects resulting from ion implantation followed by a thermal anneal; i.e. collisional mixing and impurity induced mixing. It was found that Ga and As ion induced mixing are mainly due to the collisional effect, where the extent of the mixing can be estimated theoretically, with the parameters of ion mass, incident energy and the implant dose. The impurity effect was dominant for Si, Ge, Be, Zn and Te. Quantitative studies of impurity induced mixing have been conducted on samples doped with Si or Te during the growth process. It was discovered that Si induced AlGaAs superlattice mixing yielded an activation energy of approximately 4 eV for the Al diffusion coefficient with a high power law dependence of the prefactor on the Si concentration. In the Te doped AlGaAs superlattice the Al diffusion coefficient exhibited an activation energy of ∼3.0 eV, with a prefactor approximately proportional to the Te concentration. These results are of importance in examining the current diffusion models. Zn and Si induced InP/InGaAs superlattice mixing are examined. It was found that Zn predominantly induces cation interdiffusion, while Si induces comparable cation and anion interdiffusion. In addition, widely dispersed Zn rich islands form with Zn residing in the InP layers in the form of Zn 3 P 2 . With unstrained starting material, the layer bandgap disparity increases due to mixing induced strain, while in the Si diffused sample the mixed region would be expected to exhibit bandgaps intermediate between those of the original layers. Semiconductor superlattice mixing shows technological potential for optoelectronic device fabrication

  4. Quasiperiodic AlGaAs superlattices for neuromorphic networks and nonlinear control systems

    Energy Technology Data Exchange (ETDEWEB)

    Malyshev, K. V., E-mail: malyshev@bmstu.ru [Electronics and Laser Technology Department, Bauman Moscow State Technical University, Moscow 105005 (Russian Federation)

    2015-01-28

    The application of quasiperiodic AlGaAs superlattices as a nonlinear element of the FitzHugh–Nagumo neuromorphic network is proposed and theoretically investigated on the example of Fibonacci and figurate superlattices. The sequences of symbols for the figurate superlattices were produced by decomposition of the Fibonacci superlattices' symbolic sequences. A length of each segment of the decomposition was equal to the corresponding figurate number. It is shown that a nonlinear network based upon Fibonacci and figurate superlattices provides better parallel filtration of a half-tone picture; then, a network based upon traditional diodes which have cubic voltage-current characteristics. It was found that the figurate superlattice F{sup 0}{sub 11}(1) as a nonlinear network's element provides the filtration error almost twice less than the conventional “cubic” diode. These advantages are explained by a wavelike shape of the decreasing part of the quasiperiodic superlattice's voltage-current characteristic, which leads to multistability of the network's cell. This multistability promises new interesting nonlinear dynamical phenomena. A variety of wavy forms of voltage-current characteristics opens up new interesting possibilities for quasiperiodic superlattices and especially for figurate superlattices in many areas—from nervous system modeling to nonlinear control systems development.

  5. Sm cluster superlattice on graphene/Ir(111)

    Science.gov (United States)

    Mousadakos, Dimitris; Pivetta, Marina; Brune, Harald; Rusponi, Stefano

    2017-12-01

    We report on the first example of a self-assembled rare earth cluster superlattice. As a template, we use the moiré pattern formed by graphene on Ir(111); its lattice constant of 2.52 nm defines the interparticle distance. The samarium cluster superlattice forms for substrate temperatures during deposition ranging from 80 to 110 K, and it is stable upon annealing to 140 K. By varying the samarium coverage, the mean cluster size can be increased up to 50 atoms, without affecting the long-range order. The spatial order and the width of the cluster size distribution match the best examples of metal cluster superlattices grown by atomic beam epitaxy on template surfaces.

  6. Tunable superlattice in graphene to control the number of Dirac points.

    Science.gov (United States)

    Dubey, Sudipta; Singh, Vibhor; Bhat, Ajay K; Parikh, Pritesh; Grover, Sameer; Sensarma, Rajdeep; Tripathi, Vikram; Sengupta, K; Deshmukh, Mandar M

    2013-09-11

    Superlattice in graphene generates extra Dirac points in the band structure and their number depends on the superlattice potential strength. Here, we have created a lateral superlattice in a graphene device with a tunable barrier height using a combination of two gates. In this Letter, we demonstrate the use of lateral superlattice to modify the band structure of graphene leading to the emergence of new Dirac cones. This controlled modification of the band structure persists up to 100 K.

  7. Piezoelectricity in the dielectric component of nanoscale dielectric-ferroelectric superlattices.

    Science.gov (United States)

    Jo, Ji Young; Sichel, Rebecca J; Lee, Ho Nyung; Nakhmanson, Serge M; Dufresne, Eric M; Evans, Paul G

    2010-05-21

    The origin of the functional properties of complex oxide superlattices can be resolved using time-resolved synchrotron x-ray diffraction into contributions from the component layers making up the repeating unit. The CaTiO3 layers of a CaTiO3/BaTiO3 superlattice have a piezoelectric response to an applied electric field, consistent with a large continuous polarization throughout the superlattice. The overall piezoelectric coefficient at large strains, 54  pm/V, agrees with first-principles predictions in which a tetragonal symmetry is imposed on the superlattice by the SrTiO3 substrate.

  8. Superlattice configurations in linear chain hydrocarbon binary mixtures

    Indian Academy of Sciences (India)

    Unknown

    Long-chain alkanes; binary mixtures; superlattices; discrete orientational changes. 1. Introduction ... tem and a model of superlattice configuration was proposed4, in terms of .... C18 system,4 the angle with value = 3⋅3° was seen to play an ...

  9. Electrical and optical properties of multiple quantum well structures and their applications to infrared detectors

    International Nuclear Information System (INIS)

    Helgesen, P.

    1992-04-01

    In this work the author investigate the subband nature of multiple quantum well structures by photoconductance spectroscopy, optical absorption measurements and tunneling experiments. Both interband and intraband transitions have been studied. The work is aimed at making an infrared detector using wide band gap semiconductors. 14 refs

  10. Wave-function reconstruction in a graded semiconductor superlattice

    DEFF Research Database (Denmark)

    Lyssenko, V. G.; Hvam, Jørn Märcher; Meinhold, D.

    2004-01-01

    We reconstruct a test wave function in a strongly coupled, graded well-width superlattice by resolving the spatial extension of the interband polarisation and deducing the wave function employing non-linear optical spectroscopy. The graded gap superlattice allows us to precisely control the dista...

  11. Epitaxial rare-earth superlattices and films

    International Nuclear Information System (INIS)

    Salamon, M.B.; Beach, R.S.; Flynn, C.P.; Matheny, A.; Tsui, F.; Rhyne, J.J.

    1992-01-01

    This paper reports on epitaxial growth of rare-earth superlattices which is demonstrated to have opened important new areas of research on magnetic materials. The propagation magnetic order through non-magnetic elements, including its range and anisotropy, has been studied. The importance of magnetostriction in determining the phase diagram is demonstrated by the changes induced by epitaxial clamping. The cyrstallinity of epitaxial superlattices provides the opportunity to study interfacial magnetism by conventional x-ray and neutron scattering methods

  12. Antiferromagnetic spinor condensates in a bichromatic superlattice

    Science.gov (United States)

    Tang, Tao; Zhao, Lichao; Chen, Zihe; Liu, Yingmei

    2017-04-01

    A spinor Bose-Einstein condensate in an optical supelattice has been considered as a good quantum simulator for understanding mesoscopic magnetism. We report an experimental study on an antiferromagnetic spinor condensate in a bichromatic superlattice constructed by a cubic red-detuned optical lattice and a one-dimensional blue-detuned optical lattice. Our data demonstrate a few advantages of this bichromatic superlattice over a monochromatic lattice. One distinct advantage is that the bichromatic superlattice enables realizing the first-order superfluid to Mott-insulator phase transitions within a much wider range of magnetic fields. In addition, we discuss an apparent discrepancy between our data and the mean-field theory. We thank the National Science Foundation and the Oklahoma Center for the Advancement of Science and Technology for financial support.

  13. Optical response of laser-doped silicon carbide for an uncooled midwave infrared detector.

    Science.gov (United States)

    Lim, Geunsik; Manzur, Tariq; Kar, Aravinda

    2011-06-10

    An uncooled mid-wave infrared (MWIR) detector is developed by doping an n-type 4H-SiC with Ga using a laser doping technique. 4H-SiC is one of the polytypes of crystalline silicon carbide and a wide bandgap semiconductor. The dopant creates an energy level of 0.30  eV, which was confirmed by optical spectroscopy of the doped sample. This energy level corresponds to the MWIR wavelength of 4.21  μm. The detection mechanism is based on the photoexcitation of electrons by the photons of this wavelength absorbed in the semiconductor. This process modifies the electron density, which changes the refractive index, and, therefore, the reflectance of the semiconductor is also changed. The change in the reflectance, which is the optical response of the detector, can be measured remotely with a laser beam, such as a He-Ne laser. This capability of measuring the detector response remotely makes it a wireless detector. The variation of refractive index was calculated as a function of absorbed irradiance based on the reflectance data for the as-received and doped samples. A distinct change was observed for the refractive index of the doped sample, indicating that the detector is suitable for applications at the 4.21  μm wavelength.

  14. Scaling properties of optical reflectance from quasi-periodic superlattices

    International Nuclear Information System (INIS)

    Wu Xiang; Yao Hesheng; Feng Weiguo

    1991-08-01

    The scaling properties of the optical reflectance from two types of quasi-periodic metal-insulator superlattices, one with the structure of Cantor bars and the other with the structure of Cantorian-Fibonaccian train, have been studied for the region of s-polarized soft x-rays and extreme ultraviolet. By using the hydrodynamic model of electron dynamics and transfer-matrix method, and be taking into account retardation effects, we have presented the formalism of the reflectivity for the superlattices. From our numerical results, we found that the reflection spectra of the quasi-superlattices have a rich structure of self-similarity. The interesting scaling indices, which are related to the fractal dimensions, of the spectra are also discussed for the two kinds of the quasi-superlattices. (author). 10 refs, 7 figs

  15. Superlattice to nanoelectronics

    CERN Document Server

    Tsu, Raphael

    2005-01-01

    Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, to orient those who want to enter into this nanoscience. It describes the fundamental concepts and goes on to answer many questions about todays 'Nanoelectronics'. It covers the applications and types of devices which have been produced, many of which are still in use today. This historical perspective is important as a guide to what and how technology and new fundamental ideas are introduced and developed. The author communicates a basic understanding of the physics involved from first principles, whilst adding new depth, using simple mathematics and explanation of the background essentials. Topics covered include * Introductory materials * Superlattice, Bloch oscillations and transport * Tunneling in QWs to QDs * Optical properties: optical transitions, size dependent dielectric constant, capacitance and doping * Quantum devices: New approaches without doping and heterojunctions - quantum confinement...

  16. Novel electronic structures of superlattice composed of graphene and silicene

    International Nuclear Information System (INIS)

    Yu, S.; Li, X.D.; Wu, S.Q.; Wen, Y.H.; Zhou, S.; Zhu, Z.Z.

    2014-01-01

    Highlights: • Graphene/silicene superlattices exhibit metallic electronic properties. • Dirac point of graphene is folded to the Γ-point in the superlattice system. • Significant changes in the transport properties of the graphene layers are expected. • Small amount of charge transfer from the graphene to the silicene layers is found. - Abstract: Superlattice is a major force in providing man-made materials with unique properties. Here we report a study of the structural and electronic properties of a superlattice made with alternate stacking of graphene and hexagonal silicene. Three possible stacking models, i.e., the top-, bridge- and hollow-stacking, are considered. The top-stacking is found to be the most stable pattern. Although both the free-standing graphene and silicene are semi-metals, our results suggest that the graphene and silicene layers in the superlattice both exhibit metallic electronic properties due to a small amount of charge transfer from the graphene to the silicene layers. More importantly, the Dirac point of graphene is folded to the Γ-point of the superlattice, instead of the K-point in the isolated graphene. Such a change in the Dirac point of graphene could lead to significant change in the transportation property of the graphene layer. Moreover, the band structure and the charge transfer indicate that the interaction between the stacking sheets in the graphene/silicene superlattice is more than just the van der Waals interaction

  17. Band structure of superlattice with δ-like potential

    International Nuclear Information System (INIS)

    Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

    1993-08-01

    Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

  18. Room temperature performance of mid-wavelength infrared InAsSb nBn detectors

    Energy Technology Data Exchange (ETDEWEB)

    Soibel, Alexander; Hill, Cory J.; Keo, Sam A.; Hoglund, Linda; Rosenberg, Robert; Kowalczyk, Robert; Khoshakhlagh, Arezou; Fisher, Anita; Ting, David Z.-Y.; Gunapala, Sarath D. [Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Dr., Pasadena, California 91030 (United States)

    2014-07-14

    In this work, we investigate the high temperature performance of mid-wavelength infrared InAsSb-AlAsSb nBn detectors with cut-off wavelengths near 4.5 μm. The quantum efficiency of these devices is 35% without antireflection coatings and does not change with temperature in the 77–325 K temperature range, indicating potential for room temperature operation. The current generation of nBn detectors shows an increase of operational bias with temperature, which is attributed to a shift in the Fermi energy level in the absorber. Analysis of the device performance shows that operational bias and quantum efficiency of these detectors can be further improved. The device dark current stays diffusion limited in the 150 K–325 K temperature range and becomes dominated by generation-recombination processes at lower temperatures. Detector detectivities are D*(λ) = 1 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 300 K and D*(λ) = 5 × 10{sup 9} (cm Hz{sup 0.5}/W) at T = 250 K, which is easily achievable with a one stage TE cooler.

  19. Latest developments in GaN-based quantum devices for infrared optoelectronics

    OpenAIRE

    Monroy, Eva; Guillot, Fabien; Leconte, Sylvain; Nevou, Laurent; Doyennette, Laeticia; Tchernycheva, Maria; Julien, François H.; Baumann, Esther; Giorgetta, Fabrizio R.; Hofstetter, Daniel

    2011-01-01

    In this work, we summarize the latest progress in intersubband devices based on GaN/AlN nanostructures for operation in the near-infrared. We first discuss the growth and characterization of ultra-thin GaN/AlN quantum well and quantum dot superlattices by plasma-assisted molecular-beam epitaxy. Then, we present the performance of nitride-based infrared photodetectors and electro-optical modulators operating at 1.55 μm. Finally, we discuss the progress towards intersubband light emitters, incl...

  20. Infra-red signature neutron detector

    Science.gov (United States)

    Bell, Zane William [Oak Ridge, TN; Boatner, Lynn Allen [Oak Ridge, TN

    2009-10-13

    A method of detecting an activator, the method including impinging with an activator a receptor material that includes a photoluminescent material that generates infrared radiation and generation a by-product of a nuclear reaction due to the activator impinging the receptor material. The method further includes generating light from the by-product via the Cherenkov effect, wherein the light activates the photoluminescent material so as to generate the infrared radiation. Identifying a characteristic of the activator based on the infrared radiation.

  1. Formation Energies of Native Point Defects in Strained-Layer Superlattices (Postprint)

    Science.gov (United States)

    2017-06-05

    potential; bulk materials; total energy calculations; entropy; strained- layer superlattice (SLS) 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...AFRL-RX-WP-JA-2017-0217 FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES (POSTPRINT) Zhi-Gang Yu...2016 Interim 11 September 2013 – 5 November 2016 4. TITLE AND SUBTITLE FORMATION ENERGIES OF NATIVE POINT DEFECTS IN STRAINED- LAYER SUPERLATTICES

  2. APPROACH TO SYNTHESIS OF PASSIVE INFRARED DETECTORS BASED ON QUASI-POINT MODEL OF QUALIFIED INTRUDER

    Directory of Open Access Journals (Sweden)

    I. V. Bilizhenko

    2017-01-01

    Full Text Available Subject of Research. The paper deals with synthesis of passive infra red (PIR detectors with enhanced detection capability of qualified intruder who uses different types of detection countermeasures: the choice of specific movement direction and disguise in infrared band. Methods. We propose an approach based on quasi-point model of qualified intruder. It includes: separation of model priority parameters, formation of partial detection patterns adapted to those parameters and multi channel signal processing. Main Results. Quasi-pointmodel of qualified intruder consisting of different fragments was suggested. Power density difference was used for model parameters estimation. Criteria were formulated for detection pattern parameters choice on the basis of model parameters. Pyroelectric sensor with nine sensitive elements was applied for increasing the signal information content. Multi-channel processing with multiple partial detection patterns was proposed optimized for detection of intruder's specific movement direction. Practical Relevance. Developed functional device diagram can be realized both by hardware and software and is applicable as one of detection channels for dual technology passive infrared and microwave detectors.

  3. Influence of infrared stimulation on spectroscopy characteristics of co-planar grid CdZnTe detectors

    International Nuclear Information System (INIS)

    Fjodorov, V.; Ivanov, V.; Loutchanski, A.

    2015-01-01

    It was previously found that illumination with monochromatic infrared (IR) light with wavelengths close to the absorption edge of the CdZnTe exert significant positive influence on the spectrometric characteristics of quasi-hemispherical CdZnTe detectors at room temperature. In this paper, preliminary results of IR stimulation on the spectrometric characteristics of coplanar-grid CdZnTe detectors as well as results of further studies of planar and quasi-hemispherical detectors are presented. Coplanar-grid detectors of 10 mm x 10 mm x 10 mm from Redlen Technologies and commercial available IR LEDs with different wavelengths of 800-1000 nm were used in the experiments. Influence of intensity and direction of IR illumination on the detector's characteristics was studied. Analysis of signals shapes from the preamplifiers outputs at registration of alpha particles showed that IR illumination leads to a change in the shapes of these signals. This may indicate changes in electric fields distributions. An improvement in energy resolution at gamma-energy of 662 keV was observed with quasi-hemispherical and co-planar detectors at the certain levels of IR illumination intensity. The most noticeable effect of IR stimulation was observed with quasi-hemispherical detectors. It is due with optimization of charge collection conditions in the quasi-hemispherical detectors under IT stimulation. (authors)

  4. Materials science and technology strained-layer superlattices materials science and technology

    CERN Document Server

    Pearsall, Thomas P; Willardson, R K; Pearsall, Thomas P

    1990-01-01

    The following blurb to be used for the AP Report and ATI only as both volumes will not appear together there.****Strained-layer superlattices have been developed as an important new form of semiconducting material with applications in integrated electro-optics and electronics. Edited by a pioneer in the field, Thomas Pearsall, this volume offers a comprehensive discussion of strained-layer superlattices and focuses on fabrication technology and applications of the material. This volume combines with Volume 32, Strained-Layer Superlattices: Physics, in this series to cover a broad spectrum of topics, including molecular beam epitaxy, quantum wells and superlattices, strain-effects in semiconductors, optical and electrical properties of semiconductors, and semiconductor devices.****The following previously approved blurb is to be used in all other direct mail and advertising as both volumes will be promoted together.****Strained-layer superlattices have been developed as an important new form of semiconducting ...

  5. Control of the interparticle spacing in gold nanoparticle superlattices

    Energy Technology Data Exchange (ETDEWEB)

    MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

    2000-04-06

    The authors have investigated the formation of 2-D and 3-D superlattices of Au nanoclusters synthesized in nonionic inverse micelles, and capped with alkyl thiol ligands, with alkane chains ranging from C{sub 6} to C1{sub 18}. The thiols are found to play a significant role in the ripening of these nanoclusters, and in the formation of superlattices. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function, from which one can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the nanoclusters become more polydisperse and larger, and the gaps between particles within superlattice domains increases. Annealing studies at elevated temperatures confirm nanocluster ripening. Finally, the effect of the particle gaps on physical properties is illustrated by computing the effective dielectric constant, and it is shown that the gap size now accessible in superlattices is rather large for dielectric applications.

  6. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.

    2013-11-12

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized in this superlattice. In particular, the Dirac cone of silicene is preserved. Due to the wide band gap of hexagonal boron nitride, the superlattice realizes the characteristic physical phenomena of free-standing silicene. In particular, we address by model calculations the combined effect of the intrinsic spin-orbit coupling and an external electric field, which induces a transition from a semimetal to a topological insulator and further to a band insulator.

  7. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.

    2011-11-14

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  8. Electronic structure of superlattices of graphene and hexagonal boron nitride

    KAUST Repository

    Kaloni, Thaneshwor P.; Cheng, Yingchun; Schwingenschlö gl, Udo

    2011-01-01

    We study the electronic structure of superlattices consisting of graphene and hexagonal boron nitride slabs, using ab initio density functional theory. We find that the system favors a short C–B bond length at the interface between the two component materials. A sizeable band gap at the Dirac point is opened for superlattices with single graphene layers but not for superlattices with graphene bilayers. The system is promising for applications in electronic devices such as field effect transistors and metal-oxide semiconductors.

  9. Superlattice doped layers for amorphous silicon photovoltaic cells

    Science.gov (United States)

    Arya, Rajeewa R.

    1988-01-12

    Superlattice doped layers for amorphous silicon photovoltaic cells comprise a plurality of first and second lattices of amorphous silicon alternatingly formed on one another. Each of the first lattices has a first optical bandgap and each of the second lattices has a second optical bandgap different from the first optical bandgap. A method of fabricating the superlattice doped layers also is disclosed.

  10. InN/GaN Superlattices: Band Structures and Their Pressure Dependence

    DEFF Research Database (Denmark)

    Gorczyca, Iza; Suski, Tadek; Staszczak, Grzegorz

    2013-01-01

    Creation of short-period InN/GaN superlattices is one of the possible ways of conducting band gap engineering in the green-blue range of the spectrum. The present paper reports results of photoluminescence experiments, including pressure effects, on a superlattice sample consisting of unit cells...... with one monolayer of InN and 40 monolayers of GaN. The results are compared with calculations performed for different types of superlattices: InN/GaN, InGaN/GaN, and InN/InGaN/GaN with single monolayers of InN and/or InGaN. The superlattices are simulated by band structure calculations based on the local...... density approximation (LDA) with a semi-empirical correction for the ‘‘LDA gap error’’. A similarity is observed between the results of calculations for an InGaN/GaN superlattice (with one monolayer of InGaN) and the experimental results. This indicates that the fabricated InN quantum wells may contain...

  11. Stability and Dynamic of strain mediated Adatom Superlattices on Cu<111>

    OpenAIRE

    Kappus, Wolfgang

    2012-01-01

    Substrate strain mediated adatom density distributions have been calculated for Cu surfaces. Complemented by Monte Carlo calculations a hexagonal close packaged adatom superlattice in a coverage range up to 0.045 ML is derived. Conditions for the stability of the superlattice against nucleation and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusi...

  12. A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

    NARCIS (Netherlands)

    Baselmans, J.J.A.; Bueno, J.; Yates, Stephen J.C.; Yurduseven, O.; Llombart Juan, N.; Karatsu, K.; Baryshev, A. M.; Ferrarini, L; Endo, A.; Thoen, D.J.; de Visser, P.J.; Janssen, R.M.J.; Murugesan, V.; Driessen, E.F.C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

    2017-01-01

    Aims. Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems.

  13. A kilo-pixel imaging system for future space based far-infrared observatories using microwave kinetic inductance detectors

    NARCIS (Netherlands)

    Baselmans, J. J. A.; Bueno, J.; Yates, S. J. C.; Yurduseven, O.; Llombart, N.; Karatsu, K.; Baryshev, A. M.; Ferrari, L.; Endo, A.; Thoen, D. J.; de Visser, P. J.; Janssen, R. M. J.; Murugesan, V.; Driessen, E. F. C.; Coiffard, G.; Martin-Pintado, J.; Hargrave, P.; Griffin, M.

    Aims: Future astrophysics and cosmic microwave background space missions operating in the far-infrared to millimetre part of the spectrum will require very large arrays of ultra-sensitive detectors in combination with high multiplexing factors and efficient low-noise and low-power readout systems.

  14. Infrared LED Enhanced Spectroscopic CdZnTe Detector Working under High Fluxes of X-rays

    Directory of Open Access Journals (Sweden)

    Jakub Pekárek

    2016-09-01

    Full Text Available This paper describes an application of infrared light-induced de-polarization applied on a polarized CdZnTe detector working under high radiation fluxes. We newly demonstrate the influence of a high flux of X-rays and simultaneous 1200-nm LED illumination on the spectroscopic properties of a CdZnTe detector. CdZnTe detectors operating under high radiation fluxes usually suffer from the polarization effect, which occurs due to a screening of the internal electric field by a positive space charge caused by photogenerated holes trapped at a deep level. Polarization results in the degradation of detector charge collection efficiency. We studied the spectroscopic behavior of CdZnTe under various X-ray fluxes ranging between 5 × 10 5 and 8 × 10 6 photons per mm 2 per second. It was observed that polarization occurs at an X-ray flux higher than 3 × 10 6 mm − 2 ·s − 1 . Using simultaneous illumination of the detector by a de-polarizing LED at 1200 nm, it was possible to recover X-ray spectra originally deformed by the polarization effect.

  15. Electronic structure of superlattices

    International Nuclear Information System (INIS)

    Altarelli, M.

    1987-01-01

    Calculations of electronic states in semiconductor superlattices are briefly reviewed, with emphasis on the envelope-function method and on comparison with experiments. The energy levels in presence of external magnetic fields are discussed and compared to magneto-optical experiments. (author) [pt

  16. Participation of mechanical oscillations in thermodynamics of crystals with superlattice

    International Nuclear Information System (INIS)

    Jacjimovski K, S.; Mirjanicj Lj, D.; Shetrajchicj P, J.

    2012-01-01

    The superlattice, consisting of two periodically repeating films, is analyzed in proposal paper. Due to the structural deformations and small thickness, the acoustic phonons do not appear in these structures. The spontaneous appearance of phonons is possible in an ideal structure only. Therefore the thermodynamical analysis of phonon subsystems is the first step in investigations of superlattice properties. Internal energy as well as specific heat will be analyzed, too. Low-temperature behavior of these quantities will be compared to the corresponding quantities of bulk structures and of thin films. The general conclusion is that the main thermodynamic characteristics of superlattices are considerably lower than those of the bulk structure. Consequently, their superconductive characteristics are better than the superconductive characteristics of corresponding bulk structures. Generally considered, the application field of superlattices is wider than that of bulk structures and films. (Author)

  17. Band structure and optical properties of sinusoidal superlattices: ZnSe1-xTex

    International Nuclear Information System (INIS)

    Yang, G.; Lee, S.; Furdyna, J. K.

    2000-01-01

    This paper examines the band structure and optical selection rules in superlattices with a sinusoidal potential profile. The analysis is motivated by the recent successful fabrication of high quality ZnSe 1-x Te x superlattices in which the composition x varies sinusoidally along the growth direction. Although the band alignment in the ZnSe 1-x Te x sinusoidal superlattices is staggered (type II), they exhibit unexpectedly strong photoluminescence, thus suggesting interesting optical behavior. The band structure of such sinusoidal superlattices is formulated in terms of the nearly-free-electron (NFE) approximation, in which the superlattice potential is treated as a perturbation. The resulting band structure is unique, characterized by a single minigap separating two wide, free-electron-like subbands for both electrons and holes. Interband selection rules are derived for optical transitions involving conduction and valence-band states at the superlattice Brillouin-zone center, and at the zone edge. A number of transitions are predicted due to wave-function mixing of different subband states. It should be noted that the zone-center and zone-edge transitions are especially easy to distinguish in these superlattices because of the large width of the respective subbands. The results of the NFE approximation are shown to hold surprisingly well over a wide range of parameters, particularly when the period of the superlattice is short. (c) 2000 The American Physical Society

  18. Binding of biexcitons in GaAs/AlxGa1-xAs superlattices

    DEFF Research Database (Denmark)

    Mizeikis, Vygantas; Birkedal, Dan; Langbein, Wolfgang Werner

    1997-01-01

    Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same as in the noninte......Properties of the heavy-hole excitons and biexcitons in GaAs/Al0.3Ga0.7As superlattices are studied using linear and nonlinear optical techniques. In superlattices with miniband halfwidths less than the exciton binding energy, the biexciton binding energy is found to be the same...

  19. Computer simulation of the anomalous elastic behavior of thin films and superlattices

    International Nuclear Information System (INIS)

    Wolf, D.

    1992-10-01

    Atomistic simulations are reviewed that elucidate the causes of the anomalous elastic behavior of thin films and superlattices (the so-called supermodulus effect). The investigation of free-standing thin films and of superlattices of grain boundaries shows that the supermodulus effect is not an electronic but a structural interface effect intricately connected with the local atomic disorder at the interfaces. The consequent predictions that (1) coherent strained-layer superlattices should show the smallest elastic anomalies and (2) the introduction of incoherency at the interfaces should enhance all anomalies are validated by simulations of dissimilar-material superlattices. 38 refs, 10 figs

  20. Numerical investigation of steady-state thermal behavior of an infrared detector cryo chamber

    Directory of Open Access Journals (Sweden)

    Singhal Mayank

    2017-01-01

    Full Text Available An infrared (IR detector is simply a transducer of radiant energy, converting radiant energy into a measurable form. Since radiation does not rely on visible light, it offers the possibility of seeing in the dark or through obscured conditions, by detecting the IR energy emitted by objects. One of the prime applications of IR detector systems for military use is in target acquisition and tracking of projectile systems. The IR detectors also have great potential in commercial market. Typically, IR detectors perform best when cooled to cryogenic temperatures in the range of nearly 120 K. However, the necessity to operate in such cryogenic regimes makes the application of IR detectors extremely complex. Further, prior to proceeding on to a full blown transient thermal analysis it is worthwhile to perform a steady-state numerical analysis for ascertaining the effect of variation in viz., material, gas conduction coefficient, h, emissivity, ε, on the temperature profile along the cryo chamber length. This would enable understanding the interaction between the cryo chamber and its environment. Hence, the present work focuses on the development of steady-state numerical models for thermal analysis of IR cryo chamber using MATLAB. The numerical results show that gas conduction coefficient has marked influence on the temperature profile of the cryo chamber whereas the emissivity has a weak effect. The experimental validation of numerical results has also been presented.

  1. Resonant detectors and focal plane arrays for infrared detection

    Science.gov (United States)

    Choi, K. K.; Allen, S. C.; Sun, J. G.; DeCuir, E. A.

    2017-08-01

    We are developing resonator-QWIPs for narrowband and broadband long wavelength infrared detection. Detector pixels with 25 μm and 30 μm pitches were hybridized to fanout circuits and readout integrated electronics for radiometric measurements. With a low to moderate doping of 0.2-0.5 × 1018 cm-3 and a thin active layer thickness of 0.6-1.3 μm, we achieved a quantum efficiency between 25 and 37% and a conversion efficiency between of 15 and 20%. The temperature at which photocurrent equals dark current is about 65 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 20 mK at 2 ms integration time and 60 K operating temperature. This good performance confirms the advantages of the resonator-QWIP approach.

  2. Extended short wavelength infrared HgCdTe detectors on silicon substrates

    Science.gov (United States)

    Park, J. H.; Hansel, D.; Mukhortova, A.; Chang, Y.; Kodama, R.; Zhao, J.; Velicu, S.; Aqariden, F.

    2016-09-01

    We report high-quality n-type extended short wavelength infrared (eSWIR) HgCdTe (cutoff wavelength 2.59 μm at 77 K) layers grown on three-inch diameter CdTe/Si substrates by molecular beam epitaxy (MBE). This material is used to fabricate test diodes and arrays with a planar device architecture using arsenic implantation to achieve p-type doping. We use different variations of a test structure with a guarded design to compensate for the lateral leakage current of traditional test diodes. These test diodes with guarded arrays characterize the electrical performance of the active 640 × 512 format, 15 μm pitch detector array.

  3. Improvement of Infrared Detectors for Tissue Oximetry using Black Silicon Nanostructures

    DEFF Research Database (Denmark)

    Petersen, Søren Dahl; Davidsen, Rasmus Schmidt; Alcala, Lucia R.

    2014-01-01

    We present a nanostructured surface, made of dry etched black silicon, which lowers the reflectance for light incident at all angles. This surface is fabricated on infrared detectors used for tissue oximetry, where the detection of weak diffuse light signals is important. Monte Carlo simulations...... performed on a model of a neonatal head shows that approximately 60% of the injected light will be diffuse reflected. However, the change in diffuse reflected light due to the change in cerebral oxygenation is very low and the light will be completely isotropic scattered. The reflectance of the black...... in quantum efficiency for both normal incident light and light incident at 38°....

  4. Modified lead titanate thin films for pyroelectric infrared detectors on gold electrodes

    Science.gov (United States)

    Ahmed, Moinuddin; Butler, Donald P.

    2015-07-01

    Pyroelectric infrared detectors provide the advantage of both a wide spectral response and dynamic range, which also has enabled systems to be developed with reduced size, weight and power consumption. This paper demonstrates the deposition of lead zirconium titanate (PZT) and lead calcium titanate (PCT) thin films for uncooled pyroelectric detectors with the utilization of gold electrodes. The modified lead titanate thin films were deposited by pulsed laser deposition on gold electrodes. The PZT and PCT thins films deposited and annealed at temperatures of 650 °C and 550 °C respectively demonstrated the best pyroelectric performance in this work. The thin films displayed a pyroelectric effect that increased with temperature. Poling of the thin films was carried out for a fixed time periods and fixed dc bias voltages at elevated temperature in order to increase the pyroelectric coefficient by establishing a spontaneous polarization of the thin films. Poling caused the pyroelectric current to increase one order of magnitude.

  5. Conceptual thermal design and analysis of a far-infrared/mid-infrared remote sensing instrument

    Science.gov (United States)

    Roettker, William A.

    1992-07-01

    This paper presents the conceptual thermal design and analysis results for the Spectroscopy of the Atmosphere using Far-Infrared Emission (SAFIRE) instrument. SAFIRE has been proposed for Mission to Planet Earth to study ozone chemistry in the middle atmosphere using remote sensing of the atmosphere in the far-infrared (21-87 microns) and mid-infrared (9-16 microns) spectra. SAFIRE requires that far-IR detectors be cooled to 3-4 K and mid-IR detectors to 80 K for the expected mission lifetime of five years. A superfluid helium dewar and Stirling-cycle cryocoolers provide the cryogenic temperatures required by the infrared detectors. The proposed instrument thermal design uses passive thermal control techniques to reject 465 watts of waste heat from the instrument.

  6. pi-phase magnetism in ferromagnetic-superconductor superlattices

    CERN Document Server

    Khusainov, M G; Proshin, Y N

    2001-01-01

    The Larkin-Ovchinnikov-Fylde-Ferrel new 0 pi- and pi pi-states are forecasted for the ferromagnetic metal/superconductor superlattices with antiferromagnetic magnetization orientation in the neighbouring layers. The above-mentioned states are characterized under certain conditions by higher critical temperature T sub c as compared to the earlier known LOFF 00- and pi 0-states with the FM-layers ferromagnetic ordering. It is shown that the nonmonotonous behavior of the T sub c of the FM/S superlattices by the thickness of the S-layers lower than the d sub s suppi value is connected with the cascades of the 0 pi-pi pi-0 pi phase transitions. The character of the T sub c oscillations by the d sub s > d sub s suppi is related to the 00-pi 0-00 transitions. The logical elements of the new type, combining the advantages of the superconducting and magnetic information recording in one sample are proposed on the basis of the FM/S superlattices

  7. Fabrication of C60/amorphous carbon superlattice structures

    International Nuclear Information System (INIS)

    Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2001-01-01

    The nitrogen doping effects in C 60 films by RF plasma source was investigated, and it was found that the nitrogen ion bombardment broke up C 60 molecules and changed them into amorphous carbon. Based on these results, formation of C 60 /amorphous carbon superlattice structure was proposed. The periodic structure of the resulted films was confirmed by XRD measurements, as the preliminary results of fabrication of the superlattice structure

  8. Dependence of Fe/Cr superlattice magnetoresistance on orientation of external magnetic field

    International Nuclear Information System (INIS)

    Ustinov, V.V.; Romashev, L.N.; Minin, V.I.; Semerikov, A.V.; Del', A.R.

    1995-01-01

    The paper presents the results of investigations into giant magnetoresistance of [Fe/Cr] 30 /MgO superlattices obtained using molecular-beam epitaxy under various orientations of magnetic field relatively to the layers of superlattice and to the direction of current flow. Theory of orientation dependence of superlattice magnetoresistance enabling to describe satisfactorily behaviour of magnetoresistance at arbitrary direction of magnetic field on the ground of results of magnetoresistance measurements in magnetic field parallel and perpendicular to plane of layers, is elaborated. It is pointed out that it is possible to obtain field dependence of superlattice magnetization on the ground of measurement results. 9 refs., 6 figs

  9. Epitaxial superlattices with titanium nitride as a plasmonic component for optical hyperbolic metamaterials

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Saha, Bivas; Liu, Jing

    2014-01-01

    , we address these issues by realizing an epitaxial superlattice as an HMM. The superlattice consists of ultrasmooth layers as thin as 5 nm and exhibits sharp interfaces which are essential for high-quality HMM devices. Our study reveals that such a TiN-based superlattice HMM provides a higher PDOS...

  10. Structural and magnetic properties of holmium-scandium alloys and superlattices

    DEFF Research Database (Denmark)

    Bryn-Jacobsen, C.; Cowley, R.A.; McMorrow, D.F.

    1997-01-01

    The properties of Ho-Sc alloys and superlattices grown by molecular-beam epitaxy have been investigated using x-ray and neutron-diffraction techniques. Structural studies reveal that the alloy samples have different a lattice parameters for the Sc-seed layer and the Ho:Sc alloy grown on top...... of the seed layer; while the superlattices have different a lattice parameters for the Sc seed, and for both the Ho and Sc in the superlattice layers. The structural characteristics are related to the large lattice mismatches (of the order 7%) between the constituent elements. The magnetic moments...

  11. Intraminiband Relaxation In Doped GaAs/AlGaAs Superlattices Studied By Two-Color Infrared Pump-Probe Experiments

    International Nuclear Information System (INIS)

    Wagner, M.; Stehr, D.; Schneider, H.; Helm, M.; Andrews, A. M.; Roch, T.; Strasser, G.

    2010-01-01

    In this work we report on two-color pump-probe measurements to investigate the intraminiband dynamics of doped GaAs/AlGaAs superlattices with different miniband widths smaller or larger than the optical phonon energy. For a miniband with a width larger than the optical phonon energy we found a fast relaxation, independent of the excitation intensity. For narrow minibands this relaxation takes longer and shows a strong temperature and intensity dependence.

  12. Propagation of Nd magnetic phases in Nd/Sm(001) superlattices

    International Nuclear Information System (INIS)

    Soriano, S; Dufour, C; Dumesnil, K; Stunault, A

    2006-01-01

    The propagation of Nd long range magnetic order in the hexagonal and cubic sublattices has been investigated in double hexagonal compact Nd/Sm(001) superlattices by resonant x-ray magnetic scattering at the Nd L 2 absorption edge. For a superlattice with 3.7 nm thick Sm layers, the magnetic structure of the hexagonal sublattice propagates coherently through several bilayers, whereas the order in the cubic sublattice remains confined to single Nd blocks. For a superlattice with 1.4 nm thick Sm layers, the magnetic structures of both sublattices appear to propagate coherently through the superlattice. This is the first observation (i) of the long range coherent propagation of Nd order on the cubic sites between Nd blocks and (ii) of a different thickness dependence of the propagation of the Nd magnetic phases associated with the hexagonal and cubic sublattices. The propagation of the Nd magnetic order through Sm is interpreted in terms of generalized susceptibility of the Nd conduction electrons

  13. Ordered quantum-ring chains grown on a quantum-dot superlattice template

    International Nuclear Information System (INIS)

    Wu Jiang; Wang, Zhiming M.; Holmes, Kyland; Marega, Euclydes; Mazur, Yuriy I.; Salamo, Gregory J.

    2012-01-01

    One-dimensional ordered quantum-ring chains are fabricated on a quantum-dot superlattice template by molecular beam epitaxy. The quantum-dot superlattice template is prepared by stacking multiple quantum-dot layers and quantum-ring chains are formed by partially capping quantum dots. Partially capping InAs quantum dots with a thin layer of GaAs introduces a morphological change from quantum dots to quantum rings. The lateral ordering is introduced by engineering the strain field of a multi-layer InGaAs quantum-dot superlattice.

  14. Infrared thermography

    CERN Document Server

    Meola, Carosena

    2012-01-01

    This e-book conveys information about basic IRT theory, infrared detectors, signal digitalization and applications of infrared thermography in many fields such as medicine, foodstuff conservation, fluid-dynamics, architecture, anthropology, condition monitoring, non destructive testing and evaluation of materials and structures.

  15. Quasi free-standing silicene in a superlattice with hexagonal boron nitride

    KAUST Repository

    Kaloni, T. P.; Tahir, M.; Schwingenschlö gl, Udo

    2013-01-01

    We study a superlattice of silicene and hexagonal boron nitride by first principles calculations and demonstrate that the interaction between the layers of the superlattice is very small. As a consequence, quasi free-standing silicene is realized

  16. Phonon-induced optical superlattice.

    Science.gov (United States)

    de Lima, M M; Hey, R; Santos, P V; Cantarero, A

    2005-04-01

    We demonstrate the formation of a dynamic optical superlattice through the modulation of a semiconductor microcavity by stimulated acoustic phonons. The high coherent phonon population produces a folded optical dispersion relation with well-defined energy gaps and renormalized energy levels, which are accessed using reflection and diffraction experiments.

  17. Magnetic rare earth superlattices

    DEFF Research Database (Denmark)

    Majkrzak, C.F.; Kwo, J.; Hong, M.

    1991-01-01

    Advances in molecular beam epitaxy deposition techniques have recently made it possible to grow, an atomic plane at a time, single crystalline superlattices composed of alternating layers of a magnetic rare earth, such as Gd, Dy, Ho, or Er, and metallic Y, which has an identical chemical structure...

  18. Magneto-transport studies of InAs/GaSb short period superlattices

    International Nuclear Information System (INIS)

    Broadley, Victoria Jane

    2002-01-01

    This thesis studies the transport properties of short period semiconducting InAs/GaSb superlattices in the presence of strong electric and magnetic fields applied parallel to the growth axis. Electrical transport parallel to the growth axis occurs through the superlattice miniband, which have widths varying from three to 30meV. Resonant scattering between confined Landau levels and Stark levels is observed at low temperatures (4.2K). In addition LO-phonon assisted scattering between Landau levels is observed in both type-I GaAs/AIAs and type-ll inAs/GaSb superlattices, which are enhanced in the type-ll system due to the strong interband coupling. K·p band structure calculations show that the interband coupling causes the superlattice miniband energy dispersion to be strongly dependent on the in-plane wavevector and the applied magnetic field. For large applied electric fields, where the miniband is split into discrete Stark levels, strong stark-cyclotron resonance (SCR) features are observed, which occur when the Landau level separation equals to the stark level separation. These resonances are enhanced when compared to SCR in type-I superlattices due to the suppression of miniband conduction in higher lying Landau levels. At low electric fields electrical transport through the superlattice miniband yields characteristic miniband transport features, which are modelled using the Esaki-Tsu miniband transport model. Strong electron - LO-phonon scattering is also observed in InAs/GaSb superlattices, where we report the first observation of miniband transport assisted via the emission of LO-phonons between stark levels in adjacent wells. Below 50K thermally activated behaviour is reported and at high magnetic fields (in the quantum limit) complete localisation of carriers is observed. In this regime LO-phonon delocalised transport in also observed. (author)

  19. Superlattice photonic crystal as broadband solar absorber for high temperature operation.

    Science.gov (United States)

    Rinnerbauer, Veronika; Shen, Yichen; Joannopoulos, John D; Soljačić, Marin; Schäffler, Friedrich; Celanovic, Ivan

    2014-12-15

    A high performance solar absorber using a 2D tantalum superlattice photonic crystal (PhC) is proposed and its design is optimized for high-temperature energy conversion. In contrast to the simple lattice PhC, which is limited by diffraction in the short wavelength range, the superlattice PhC achieves solar absorption over broadband spectral range due to the contribution from two superposed lattices with different cavity radii. The superlattice PhC geometry is tailored to achieve maximum thermal transfer efficiency for a low concentration system of 250 suns at 1500 K reaching 85.0% solar absorptivity. In the high concentration case of 1000 suns, the superlattice PhC absorber achieves a solar absorptivity of 96.2% and a thermal transfer efficiency of 82.9% at 1500 K, amounting to an improvement of 10% and 5%, respectively, versus the simple square lattice PhC absorber. In addition, the performance of the superlattice PhC absorber is studied in a solar thermophotovoltaic system which is optimized to minimize absorber re-emission by reducing the absorber-to-emitter area ratio and using a highly reflective silver aperture.

  20. X-ray diffraction of multilayers and superlattices

    International Nuclear Information System (INIS)

    Bartels, W.J.; Hornstra, J.; Lobeek, D.J.W.

    1986-01-01

    Recursion formulae for calculating the reflected amplitude ratio of multilayers and superlattices have been derived from the Takagi-Taupin differential equations, which describe the dynamical diffraction of X-rays in deformed crystals. Calculated rocking curves of complicated layered structures, such as non-ideal superlattices on perfect crystals, are shown to be in good agreement with observed diffraction profiles. The kinematical theory can save computing time only in the case of an ideal superlattice, for which a geometric series can be used, but the reflections must be below 10% so that multiple reflections can be neglected. For a perfect crystal of arbitrary thickness the absorption at the center of the dynamical reflection is found to be proportional to the square root of the reflectivity. Sputter-deposited periodic multilayers of tungsten and carbon can be considered as an artificial crystal, for which dynamical X-ray diffraction calculations give results very similar to those of a macroscopic optical description in terms of the complex index of refraction and Fresnel reflection coefficients. (orig.)

  1. Magnetic structures of holmium-lutetium alloys and superlattices

    DEFF Research Database (Denmark)

    Swaddling, P.P.; Cowley, R.A.; Ward, R.C.C.

    1996-01-01

    Alloys and superlattices of Ho and Lu have been grown using molecular beam epitaxy and their magnetic structures determined using neutron-scattering techniques. The 4f moments in the alloys form a helix at all compositions with the moments aligned in the basal plane perpendicular to the wave vector...... of the helix remaining coherent through the nonmagnetic Lu blocks. The neutron scattering from the superlattices is consistent with a model in which there are different phase advances of the helix turn angle through the Ho and Lu blocks, but with a localized moment on the Ho sites only. A comparison...... of Ho and Lu. At low temperatures, for superlattices with fewer than approximately twenty atomic planes of Ho, the Ho moments within a block undergo a phase transition from helical to ferromagnetic order, with the coupling between successive blocks dependent on the thickness of the Lu spacer....

  2. Second harmonic generation in generalized Thue-Morse ferroelectric superlattices

    International Nuclear Information System (INIS)

    Wang Longxiang; Yang Xiangbo; Chen Tongsheng

    2009-01-01

    In this paper the second harmonic generation (SHG) in generalized Thue-Morse (GTM(m, n)) ferroelectric superlattices is studied. Under the small-signal approximation, the SHG spectra in both real and reciprocal spaces are investigated. It is found that: (1) only when the structure parameters l, l A , and l B are all chosen to be proper, can SHG in GTM(m, n) ferroelectric superlattices be generated; (2) for Family A of generalized Thue-Morse, GTM(m, 1) ferroelectric systems, with the increase of parameter m, the intense peaks of SHG concentrate on the long wavelength 1.4-1.5μm (the fundamental beam (FB) wavelength is within 0.8-1.5μm), but for Family B of generalized Thue-Morse, GTM(1, n) ferroelectric superlattices, with the increase of parameter n, the intense peaks of SHG concentrate on the middle wavelength 1.1-1.2μm; and (3) for GTM(m, 1) ferroelectric superlattices, the bigger the m, the stronger the relative integral intensity (RII) of SHG would be, but for GTM(1, n) ferroelectric systems, the bigger the n, the weaker the RII of SHG would be.

  3. COMPORTAMENTO A CORROSIONE E TRIBOCORROSIONE DI RIVESTIMENTI CERMET E CERMET/ SUPERLATTICE

    OpenAIRE

    Monticelli, C.; Zucchi, F.

    2009-01-01

    È stato studiato il comportamento a corrosione e tribocorrosione di riporti cermet e cermet/superlattice,applicati su campioni di acciaio. I riporti cermet consistono in riporti termici HVOF a spessore,di tipo WC-12Co o Cr3C2-37WC-18Me. I doppi riporti cermet/superlattice sono ottenuti sovrapponendoai depositi cermet citati un superlattice a base di nitruri, in cui si alternano strati di CrN e di NbN. Unasoluzione al 3.5 % di NaCl costituisce l’ambiente aggressivo. Le condizioni di tribocorro...

  4. Transmission of electrons with flat passbands in finite superlattices

    International Nuclear Information System (INIS)

    Barajas-Aguilar, A H; Rodríguez-Magdaleno, K A; Martínez-Orozco, J C; Enciso-Muñoz, A; Contreras-Solorio, D A

    2013-01-01

    Using the transfer matrix method and the Ben Daniel-Duke equation for variable mass electrons propagation, we calculate the transmittance for symmetric finite superlattices where the width and the height of the potential barriers follow a linear dependence. The width and height of the barriers decreases from the center to the ends of the superlattice. The transmittance presents intervals of stopbands and quite flat passbands.

  5. GeTe sequences in superlattice phase change memories and their electrical characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Ohyanagi, T., E-mail: ohyanagi@leap.or.jp; Kitamura, M.; Takaura, N. [Low-Power Electronics Association and Projects (LEAP), Onogawa 16-1, Tsukuba, Ibaraki 305-8569 (Japan); Araidai, M. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Kato, S. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan); Shiraishi, K. [Department of Computational Science and Engineering, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8571 (Japan)

    2014-06-23

    We studied GeTe structures in superlattice phase change memories (superlattice PCMs) with a [GeTe/Sb{sub 2}Te{sub 3}] stacked structure by X-ray diffraction (XRD) analysis. We examined the electrical characteristics of superlattice PCMs with films deposited at different temperatures. It was found that XRD spectra differed between the films deposited at 200 °C and 240 °C; the differences corresponded to the differences in the GeTe sequences in the films. We applied first-principles calculations to calculate the total energy of three different GeTe sequences. The results showed the Ge-Te-Ge-Te sequence had the lowest total energy of the three and it was found that with this sequence the superlattice PCMs did not run.

  6. Tunable porous nanoallotropes prepared by post-assembly etching of binary nanoparticle superlattices

    Science.gov (United States)

    Udayabhaskararao, Thumu; Altantzis, Thomas; Houben, Lothar; Coronado-Puchau, Marc; Langer, Judith; Popovitz-Biro, Ronit; Liz-Marzán, Luis M.; Vuković, Lela; Král, Petr; Bals, Sara; Klajn, Rafal

    2017-10-01

    Self-assembly of inorganic nanoparticles has been used to prepare hundreds of different colloidal crystals, but almost invariably with the restriction that the particles must be densely packed. Here, we show that non-close-packed nanoparticle arrays can be fabricated through the selective removal of one of two components comprising binary nanoparticle superlattices. First, a variety of binary nanoparticle superlattices were prepared at the liquid-air interface, including several arrangements that were previously unknown. Molecular dynamics simulations revealed the particular role of the liquid in templating the formation of superlattices not achievable through self-assembly in bulk solution. Second, upon stabilization, all of these binary superlattices could be transformed into distinct “nanoallotropes”—nanoporous materials having the same chemical composition but differing in their nanoscale architectures.

  7. Superlattices of platinum and palladium nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    MARTIN,JAMES E.; WILCOXON,JESS P.; ODINEK,JUDY G.; PROVENCIO,PAULA P.

    2000-04-06

    The authors have used a nonionic inverse micelle synthesis technique to form nanoclusters of platinum and palladium. These nanoclusters can be rendered hydrophobic or hydrophilic by the appropriate choice of capping ligand. Unlike Au nanoclusters, Pt nanoclusters show great stability with thiol ligands in aqueous media. Alkane thiols, with alkane chains ranging from C{sub 6} to C{sub 18} were used as hydrophobic ligands, and with some of these they were able to form 2-D and/or 3-D superlattices of Pt nanoclusters as small as 2.7 nm in diameter. Image processing techniques were developed to reliably extract from transmission electron micrographs (TEMs) the particle size distribution, and information about the superlattice domains and their boundaries. The latter permits one to compute the intradomain vector pair correlation function of the particle centers, from which they can accurately determine the lattice spacing and the coherent domain size. From these data the gap between the particles in the coherent domains can be determined as a function of the thiol chain length. It is found that as the thiol chain length increases, the gaps between particles within superlattice domains increases, but more slowly than one might expect, possibly indicating thiol chain interdigitation.

  8. Transport in semiconductor nanowire superlattices described by coupled quantum mechanical and kinetic models.

    Science.gov (United States)

    Alvaro, M; Bonilla, L L; Carretero, M; Melnik, R V N; Prabhakar, S

    2013-08-21

    In this paper we develop a kinetic model for the analysis of semiconductor superlattices, accounting for quantum effects. The model consists of a Boltzmann-Poisson type system of equations with simplified Bhatnagar-Gross-Krook collisions, obtained from the general time-dependent Schrödinger-Poisson model using Wigner functions. This system for superlattice transport is supplemented by the quantum mechanical part of the model based on the Ben-Daniel-Duke form of the Schrödinger equation for a cylindrical superlattice of finite radius. The resulting energy spectrum is used to characterize the Fermi-Dirac distribution that appears in the Bhatnagar-Gross-Krook collision, thereby coupling the quantum mechanical and kinetic parts of the model. The kinetic model uses the dispersion relation obtained by the generalized Kronig-Penney method, and allows us to estimate radii of quantum wire superlattices that have the same miniband widths as in experiments. It also allows us to determine more accurately the time-dependent characteristics of superlattices, in particular their current density. Results, for several experimentally grown superlattices, are discussed in the context of self-sustained coherent oscillations of the current density which are important in an increasing range of current and potential applications.

  9. Terahertz emission of Bloch oscillators excited by electromagnetic field in lateral semiconductor superlattices

    International Nuclear Information System (INIS)

    Dodin, E.P.; Zharov, A.A.

    2003-01-01

    The effect of the strong high-frequency electromagnetic field on the lateral semiconductor superlattice is considered on the basis of the quasi-classical theory on the electron transport in the self-consistent wave arrangement. It is theoretically identified, that the lateral superlattice in the strong feed-up wave field may emit the terahertz radiation wave trains, which are associated with the periodical excitation of the Bloch oscillations in the superlattice. The conditions, required for the Bloch oscillators radiation observation, are determined. The spectral composition of the radiation, passing through the superlattice, and energy efficiency of multiplying the frequency, related to the Bloch oscillator excitation, are calculated [ru

  10. Dielectric enhancement of BaTiO3/SrTiO3 superlattices with embedded Ni nanocrystals

    International Nuclear Information System (INIS)

    Xiong Zhengwei; Sun Weiguo; Wang Xuemin; Jiang Fan; Wu Weidong

    2012-01-01

    Highlights: ► The BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs were successfully fabricated by L-MBE. ► The influence with the various concentrations of Ni nanocrystals embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. ► The BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss compared with the pure BaTiO 3 /SrTiO 3 superlattices. ► The dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory. - Abstract: The self-organized Ni nanocrystals (NCs) were embedded in BaTiO 3 /SrTiO 3 superlattices using laser molecular beam epitaxy (L-MBE). The stress of the composite films was increased with the increasing concentration of embedded Ni NCs, as investigation in stress calculation. The influence with the various concentrations of Ni NCs embedded in BaTiO 3 /SrTiO 3 superlattices was also discussed. The internal stress of the films was too strong to epitaxial growth of BaTiO 3 /SrTiO 3 superlattices. Compared with the pure BaTiO 3 /SrTiO 3 superlattices, the BaTiO 3 /SrTiO 3 superlattices with lower concentration of embedded Ni NCs had higher permittivity and dielectric loss. Furthermore, the dielectric enhancement of BaTiO 3 /SrTiO 3 superlattices with embedded Ni NCs was proposed to explained by Drude quasi-free-electron theory.

  11. Possible THz gain in superlattices at a stable operation point

    DEFF Research Database (Denmark)

    Wacker, Andreas; Allen, S. J.; Scott, J. S.

    1997-01-01

    We demonstrate that semiconductor superlattices may provide gain at THz frequencies at an operation point which is stable against fluctuations at lower frequency. While an explicit experimental demonstration for the sample considered could not be achieved, the underlying principle of quantum resp...... response is quite general and may prove successful for differently designed superlattices....

  12. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    Energy Technology Data Exchange (ETDEWEB)

    Wang, C., E-mail: cwang@mail.sim.ac.cn; Wang, F.; Cao, J. C., E-mail: jccao@mail.sim.ac.cn [Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050 (China)

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  13. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field

    International Nuclear Information System (INIS)

    Wang, C.; Wang, F.; Cao, J. C.

    2014-01-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation

  14. Terahertz radiation induced chaotic electron transport in semiconductor superlattices with a tilted magnetic field.

    Science.gov (United States)

    Wang, C; Wang, F; Cao, J C

    2014-09-01

    Chaotic electron transport in semiconductor superlattice induced by terahertz electric field that is superimposed on a dc electric field along the superlattice axis are studied using the semiclassical motion equations including the effect of dissipation. A magnetic field that is tilted relative to the superlattice axis is also applied to the system. Numerical simulation shows that electrons in superlattice miniband exhibit complicate nonlinear oscillating modes with the influence of terahertz radiation. Transitions between frequency-locking and chaos via pattern forming bifurcations are observed with the varying of terahertz amplitude. It is found that the chaotic regions gradually contract as the dissipation increases. We attribute the appearance of complicate nonlinear oscillation in superlattice to the interaction between terahertz radiation and internal cooperative oscillating mode relative to Bloch oscillation and cyclotron oscillation.

  15. Influence of skin blood flow and source-detector distance on near-infrared spectroscopy-determined cerebral oxygenation in humans

    DEFF Research Database (Denmark)

    Hirasawa, Ai; Yanagisawa, Shintaro; Tanaka, Naoki

    2015-01-01

    Most near-infrared spectroscopy (NIRS) apparatus fails to isolate cerebral oxygenation from an extracranial contribution although they use different source-detector distances. Nevertheless, the effect of different source-detector distances and change in extracranial blood flow on the NIRS signal...... in a semi-recumbent position, while extracranial blood flow was restricted by application of four different pressures (+20 to +80 mmHg) to the left temporal artery. The O2 Hb was measured at the forehead via a multidistance probe (source-detector distance; 15, 22·5 and 30 mm), and SkBF was determined...... by laser Doppler. Heart rate and blood pressure were unaffected by application of pressure to the temporal artery, while SkBF gradually decreased (Papplied pressure...

  16. Surface phonon polaritons in semi-infinite semiconductor superlattices

    International Nuclear Information System (INIS)

    Nkoma, J.S.

    1986-07-01

    Surface phonon polaritons in a semi-infinite semiconductor superlattice bounded by vacuum are studied. The modes associated with the polaritons are obtained and used to obtain the dispersion relation. Numerical results show that polariton bands exist between the TO and LO phonon frequencies, and are found to approach two surface mode frequencies in the limit of large tangential wave vector. Dependency of frequencies on the ratio of layer thicknesses is shown. Results are illustrated by a GaAs-GaP superlattice bounded by vacuum. (author)

  17. Superlattices: problems and new opportunities, nanosolids

    Directory of Open Access Journals (Sweden)

    Tsu Raphael

    2011-01-01

    Full Text Available Abstract Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids.

  18. Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodes

    International Nuclear Information System (INIS)

    Hoffmann, J; Lehnert, T; Hoffmann, D; Fouckhardt, H

    2009-01-01

    In this work, the influence of ammonium sulfide (NH 4 ) 2 S passivation on waveguide based mid-infrared InAs/GaSb superlattice photodetectors (2–5 µm wavelength) has been studied. The current–voltage characteristics for reverse as well as for forward bias of passivated samples have been examined. The advantages of this have been the reduction of the reverse leakage current and the increase of zero bias resistance. As a disadvantage the decrease of the photoresponsivity after sulfur passivation has been found. Furthermore, it has been observed that the passivation solution does not only passivate the surface of GaSb, but it also reacts with entire GaSb layers and can destroy the devices

  19. Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

    International Nuclear Information System (INIS)

    Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

    2006-01-01

    New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500mAh, AAA size type 900mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material. alized by using an improved superlattice alloy for negative electrode material. (author)

  20. Temperature-sensitive junction transformations for mid-wavelength HgCdTe photovoltaic infrared detector arrays by laser beam induced current microscope

    Energy Technology Data Exchange (ETDEWEB)

    Qiu, Weicheng [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China); National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Hu, Weida, E-mail: wdhu@mail.sitp.ac.cn; Lin, Tie; Yin, Fei; Zhang, Bo; Chen, Xiaoshuang; Lu, Wei [National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China); Cheng, Xiang' ai, E-mail: xiang-ai-cheng@126.com; Wang, Rui [College of Photoelectric Science and Engineering, National University of Defense Technology, Changsha, Hunan 410073 (China)

    2014-11-10

    In this paper, we report on the disappearance of the photosensitive area extension effect and the unusual temperature dependence of junction transformation for mid-wavelength, n-on-p HgCdTe photovoltaic infrared detector arrays. The n-type region is formed by B{sup +} ion implantation on Hg-vacancy-doped p-type HgCdTe. Junction transformations under different temperatures are visually captured by a laser beam induced current microscope. A physical model of temperature dependence on junction transformation is proposed and demonstrated by using numerical simulations. It is shown that Hg-interstitial diffusion and temperature activated defects jointly lead to the p-n junction transformation dependence on temperature, and the weaker mixed conduction compared with long-wavelength HgCdTe photodiode contributes to the disappearance of the photosensitive area extension effect in mid-wavelength HgCdTe infrared detector arrays.

  1. Tunneling in quantum superlattices with variable lacunarity

    Energy Technology Data Exchange (ETDEWEB)

    Villatoro, Francisco R. [Departamento de Lenguajes y Ciencias de la Computacion, Universidad de Malaga, E-29071 Malaga (Spain); Monsoriu, Juan A. [Departamento de Fisica Aplicada, Universidad Politecnica de Valencia, E-46022 Valencia (Spain)], E-mail: jmonsori@fis.upv.es

    2008-05-19

    Fractal superlattices are composite, aperiodic structures comprised of alternating layers of two semiconductors following the rules of a fractal set. The scattering properties of polyadic Cantor fractal superlattices with variable lacunarity are determined. The reflection coefficient as a function of the particle energy and the lacunarity parameter present tunneling curves, which may be classified as vertical, arc, and striation nulls. Approximate analytical formulae for such curves are derived using the transfer matrix method. Comparison with numerical results shows good accuracy. The new results may be useful in the development of band-pass energy filters for electrons, semiconductor solar cells, and solid-state radiation sources up to THz frequencies.

  2. Planar channeling in superlattices: Theory

    International Nuclear Information System (INIS)

    Ellison, J.A.; Picraux, S.T.; Allen, W.R.; Chu, W.K.

    1988-01-01

    The well-known continuum model theory for planar channeled energetic particles in perfect crystals is extended to layered crystalline structures and applied to superlattices. In a strained-layer structure, the planar channels with normals which are not perpendicular to the growth direction change their direction at each interface, and this dramatically influences the channeling behavior. The governing equation of motion for a planar channeled ion in a strained-layer superlattice with equal layer thicknesses is a one degree of freedom nonlinear oscillator which is periodically forced with a sequence of δ functions. These δ functions, which are of equal spacing and amplitude with alternating sign, represent the tilts at each of the interfaces. Thus upon matching an effective channeled particle wavelength, corresponding to a natural period of the nonlinear oscillator, to the period of the strained-layer superlattice, corresponding to the periodic forcing, strong resonance effects are expected. The condition of one effective wavelength per period corresponds to a rapid dechanneling at a well-defined depth (catastrophic dechanneling), whereas two wavelengths per period corresponds to no enhanced dechanneling after the first one or two layers (resonance channeling). A phase plane analysis is used to characterize the channeled particle motion. Detailed calculations using the Moliere continuum potential are compared with our previously described modified harmonic model, and new results are presented for the phase plane evolution, as well as the dechanneling as a function of depth, incident angle, energy, and layer thickness. General scaling laws are developed and nearly universal curves are obtained for the dechanneling versus depth under catastrophic dechanneling

  3. Minority carrier lifetime in mid-wavelength infrared InAs/InAsSb superlattices: Photon recycling and the role of radiative and Shockley-Read-Hall recombination mechanisms

    International Nuclear Information System (INIS)

    Höglund, L.; Ting, D. Z.; Soibel, A.; Fisher, A.; Khoshakhlagh, A.; Hill, C. J.; Keo, S.; Gunapala, S. D.

    2014-01-01

    The influence of radiative recombination on the minority carrier lifetime in mid-wavelength InAs/InAsSb superlattices was investigated. From the lifetime's dependence on temperature, photon recycling, and carrier concentration, it was demonstrated that radiative lifetime dominates for carrier concentrations >5 × 10 14  cm −3 , and Shockley-Read-Hall recombination starts to dominate the minority carrier lifetime for carrier concentrations <5 × 10 14  cm −3 . An observed increase of the minority carrier lifetime with increasing superlattice thickness was attributed to photon recycling, and good agreement between measured and theoretical values of the photon recycling factor was obtained

  4. Wet etching and chemical polishing of InAs/GaSb superlattice photodiodes

    International Nuclear Information System (INIS)

    Chaghi, R; Cervera, C; Aït-Kaci, H; Grech, P; Rodriguez, J B; Christol, P

    2009-01-01

    In this paper, we studied wet chemical etching fabrication of the InAs/GaSb superlattice mesa photodiode for the mid-infrared region. The details of the wet chemical etchants used for the device process are presented. The etching solution is based on orthophosphoric acid (H 3 PO 4 ), citric acid (C 6 H 8 O 7 ) and H 2 O 2 , followed by chemical polishing with the sodium hypochlorite (NaClO) solution and protection with photoresist polymerized. The photodiode performance is evaluated by current–voltage measurements. The zero-bias resistance area product R 0 A above 4 × 10 5 Ω cm 2 at 77 K is reported. The device did not show dark current degradation at 77 K after exposition during 3 weeks to the ambient air

  5. Interface properties of superlattices with artificially broken symmetry

    International Nuclear Information System (INIS)

    Lottermoser, Th.; Yamada, H.; Matsuno, J.; Arima, T.; Kawasaki, M.; Tokura, Y.

    2007-01-01

    We have used superlattices made of thin layers of transition metal oxides to design the so-called multiferroics, i.e. materials possessing simultaneously an electric polarization and a magnetic ordering. The polarization originates from the asymmetric stacking order accompanied by charge transfer effects, while the latter one also influences the magnetic properties of the interfaces. Due to the breaking of space and time-reversal symmetry by multiple ordering mechanism magnetic second harmonic generation is proven to be an ideal method to investigate the electric and magnetic properties of the superlattices

  6. Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

    Science.gov (United States)

    Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

    2018-03-01

    Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

  7. Wave fronts, pulses and wave trains in photoexcited superlattices behaving as excitable or oscillatory media

    International Nuclear Information System (INIS)

    Arana, J I; Bonilla, L L; Grahn, H T

    2011-01-01

    Undoped and strongly photoexcited semiconductor superlattices with field-dependent recombination behave as excitable or oscillatory media with spatially discrete nonlinear convection and diffusion. Infinitely long, dc-current-biased superlattices behaving as excitable media exhibit wave fronts with increasing or decreasing profiles, whose velocities can be calculated by means of asymptotic methods. These superlattices can also support pulses of the electric field. Pulses moving downstream with the flux of electrons can be constructed from their component wave fronts, whereas pulses advancing upstream do so slowly and experience saltatory motion: they change slowly in long intervals of time separated by fast transitions during which the pulses jump to the previous superlattice period. Photoexcited superlattices can also behave as oscillatory media and exhibit wave trains. (paper)

  8. Molecular dynamics simulation of thermal conductivities of superlattice nanowires

    Institute of Scientific and Technical Information of China (English)

    YANG; Juekuan(杨决宽); CHEN; Yunfei(陈云飞); YAN; Jingping(颜景平)

    2003-01-01

    Nonequilibrium molecular dynamics simulations were carried out to investigate heat transfer in superlattice nanowires. Results show that for fixed period length superlattice nanowires, the ratio of the total interfacial thermal resistance to the total thermal resistance and the effective thermal conductivities are invariant with the changes in interface numbers. Increasing the period length leads to an increase in the average interfacial thermal resistance, which indicates that the interfacial thermal resistance depends not only on the materials that constitute the alternating segments of superlattice nanowires, but also on the lattice strain throughout the segments. The modification of the lattice structure due to the lattice mismatch should be taken into account in the acoustic mismatch model. Simulation results also demonstrated the size confinement effect on the thermal conductivities for low dimensional structures, i.e. the thermal conductivities and the interfacial thermal resistance increase as the nanowire cross-sectional area increases.

  9. Interface disorder and transport properties in HTC/CMR superlattices

    International Nuclear Information System (INIS)

    Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E.

    2004-01-01

    The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T c RBa 2 Cu 3 O 7 (RBCO) and colossal magnetoresistance La x A 1-x MnO 3 (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La 2/3 Ca 1/3 MnO 3 and GdBCO/La 0.6 Sr 0.04 MnO 3 superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness

  10. Cross-plane Thermoelectric Transport in p-type La0.67Sr0.33MnO3/LaMnO3 Oxide Metal/Semiconductor Superlattices

    Science.gov (United States)

    2013-12-07

    fre- quency of 5 Hz, and temperature maintained at 750 C measured using an infrared pyrometer (STO emissivity of 0.8). The target was mechanically...thermoelectric transport Thermal conductivity of LSMO/LMO superlattices was measured using a photo- acoustic (PA) technique.18,19 The high resistivity...multilayer material,” J. Appl. Phys. 86(7), 3953 (1999). 19X. W. Wang, H. P. Hu, and X. F. Xu, “Photo- acoustic measurement of thermal conductivity of

  11. Study of polymorphous silicon as thermo-sensing film for infrared detectors

    International Nuclear Information System (INIS)

    Moreno, M.; Torres, A.; Ambrosio, R.; Torres, E.; Rosales, P.; Zuñiga, C.; Reyes-Betanzo, C.; Calleja, W.; De la Hidalga, J.; Monfil, K.

    2012-01-01

    In this work we have deposited and characterized pm-Si:H thin films obtained by plasma deposition. Our aim is to use pm-Si:H as thermo-sensing element for infrared (IR) detectors based on un-cooled microbolometers. We have studied the electrical characteristics of pm-Si:H that are figures of merit important for IR detection, as activation energy, thermal coefficient of resistance (TCR), room temperature conductivity (σ RT ) and responsivity under IR radiation. The influence of the substrate temperature (200 °C and 300 °C) on the pm-Si:H characteristics has been also studied. Our results shown that pm-Si:H is an excellent candidate to be used as thermo-sensing film for microbolometers, due to its large activation energy and TCR, with an improved σ RT .

  12. Spectral properties of waves in superlattices with 2D and 3D inhomogeneities

    International Nuclear Information System (INIS)

    Ignatchenko, V. A.; Tsikalov, D. S.

    2011-01-01

    We investigate the dynamic susceptibility and one-dimensional density of states in an initially sinusoidal superlattice containing simultaneously 2D phase inhomogeneities simulating correlated rough-nesses of superlattice interfaces and 3D amplitude inhomogeneities of the superlattice layer materials. The analytic expression for the averaged Green’s function of the sinusoidal superlattice with two phase inhomogeneities is derived in the Bourret approximation. It is shown that the effect of increasing asymmetry in the peak heights of dynamic susceptibility at the Brillouin zone boundary of the superlattice, which was discovered earlier [15] upon an increase in root-mean-square (rms) fluctuations, also takes place upon an increase in the correlation wavenumber of inhomogeneities. However, the peaks in this case also become closer, and the width and depth of the gap in the density of states decrease thereby. It is shown that the enhancement of rms fluctuations of 3D amplitude inhomogeneities in a superlattice containing 2D phase inhomogeneities suppresses the effect of dynamic susceptibility asymmetry and leads to a slight broadening of the gap in the density of states and a decrease in its depth. Targeted experiments aimed at detecting the effects studied here would facilitate the development of radio-spectroscopic and optical methods for identifying the presence of inhomogeneities of various dimensions in multilayer magnetic and optical structures.

  13. Rocksalt nitride metal/semiconductor superlattices: A new class of artificially structured materials

    Science.gov (United States)

    Saha, Bivas; Shakouri, Ali; Sands, Timothy D.

    2018-06-01

    Artificially structured materials in the form of superlattice heterostructures enable the search for exotic new physics and novel device functionalities, and serve as tools to push the fundamentals of scientific and engineering knowledge. Semiconductor heterostructures are the most celebrated and widely studied artificially structured materials, having led to the development of quantum well lasers, quantum cascade lasers, measurements of the fractional quantum Hall effect, and numerous other scientific concepts and practical device technologies. However, combining metals with semiconductors at the atomic scale to develop metal/semiconductor superlattices and heterostructures has remained a profoundly difficult scientific and engineering challenge. Though the potential applications of metal/semiconductor heterostructures could range from energy conversion to photonic computing to high-temperature electronics, materials challenges primarily had severely limited progress in this pursuit until very recently. In this article, we detail the progress that has taken place over the last decade to overcome the materials engineering challenges to grow high quality epitaxial, nominally single crystalline metal/semiconductor superlattices based on transition metal nitrides (TMN). The epitaxial rocksalt TiN/(Al,Sc)N metamaterials are the first pseudomorphic metal/semiconductor superlattices to the best of our knowledge, and their physical properties promise a new era in superlattice physics and device engineering.

  14. Feshbach shape resonance for high Tc pairing in superlattices of quantum stripes and quantum wells

    Directory of Open Access Journals (Sweden)

    A Bianconi

    2006-09-01

    Full Text Available   The Feshbach shape resonances in the interband pairing in superconducting superlattices of quantum wells or quantum stripes is shown to provide the mechanism for high Tc superconductivity. This mechanism provides the Tc amplification driven by the architecture of material: superlattices of quantum wells (intercalated graphite or diborides and superlattices of quantum stripes (doped high Tc cuprate perovskites where the chemical potential is tuned to a Van Hove-Lifshitz singularity (vHs in the electronic energy spectrum of the superlattice associated with the change of the Fermi surface dimensionality in one of the subbands.

  15. Electron dynamics in intentionally disordered semiconductor superlattices

    International Nuclear Information System (INIS)

    Diez, E.; Sanchez, A.; Dominguez-Adame, F.; Berman, G.P.

    1996-01-01

    We study the dynamical behavior of disordered quantum well-based semiconductor superlattices where the disorder is intentional and short-range correlated. We show that, whereas the transmission time of a particle grows exponentially with the number of wells in an usual disordered superlattice for any value of the incident particle energy, for specific values of the incident energy this time increases linearly when correlated disorder is included. As expected, those values of the energy coincide with a narrow subband of extended states predicted by the static calculations of Domacute inguez-Adame et al.[Phys. Rev. B 51, 14359 (1994)]; such states are seen in our dynamical results to exhibit a ballistic regime, very close to the WKB approximation of a perfect superlattice. Fourier transform of the output signal for an incident Gaussian wave packet reveals a dramatic filtering of the original signal, which makes us confident that devices based on this property may be designed and used for nanotechnological applications. This is more so in view of the possibility of controlling the output band using a dc-electric field, which we also discuss. In the conclusion we summarize our results and present an outlook for future developments arising from this work. copyright 1996 The American Physical Society

  16. Interface disorder and transport properties in HTC/CMR superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Haberkorn, N.; Guimpel, J.; Sirena, M.; Steren, L.B.; Campillo, G.; Saldarriaga, W.; Gomez, M.E

    2004-08-01

    The physical properties of superlattices are affected by interface disorder, like roughness and interdiffusion. X-ray diffraction allows its measurement through modeling and structure refinement. The high-T{sub c} RBa{sub 2}Cu{sub 3}O{sub 7} (RBCO) and colossal magnetoresistance La{sub x}A{sub 1-x}MnO{sub 3} (LAMO) perovskites are interesting superlattice partners given their similar lattice parameters and because the combination of magnetic and superconducting properties is interesting for both basic and applied research. We have investigated the structural and transport properties of YBCO/La{sub 2/3}Ca{sub 1/3}MnO{sub 3} and GdBCO/La{sub 0.6}Sr{sub 0.04}MnO{sub 3} superlattices grown by sputtering on (1 0 0)MgO. We find a roughness of 1 RBCO unit cell and a 30% interdiffusion in the same length from the interfaces for all samples. The superconducting behavior is found strongly dependent on the LAMO layer thickness.

  17. Detector Control and Data Acquisition for the Wide-Field Infrared Survey Telescope (WFIRST) with a Custom ASIC

    Science.gov (United States)

    Smith, Brian S.; Loose, Markus; Alkire, Greg; Joshi, Atul; Kelly, Daniel; Siskind, Eric; Rossetti, Dino; Mah, Jonathan; Cheng, Edward; Miko, Laddawan; hide

    2016-01-01

    The Wide-Field Infrared Survey Telescope (WFIRST) will have the largest near-IR focal plane ever flown by NASA, a total of 18 4K x 4K devices. The project has adopted a system-level approach to detector control and data acquisition where 1) control and processing intelligence is pushed into components closer to the detector to maximize signal integrity, 2) functions are performed at the highest allowable temperatures, and 3) the electronics are designed to ensure that the intrinsic detector noise is the limiting factor for system performance. For WFIRST, the detector arrays operate at 90 to 100 K, the detector control and data acquisition functions are performed by a custom ASIC at 150 to 180 K, and the main data processing electronics are at the ambient temperature of the spacecraft, notionally approx.300 K. The new ASIC is the main interface between the cryogenic detectors and the warm instrument electronics. Its single-chip design provides basic clocking for most types of hybrid detectors with CMOS ROICs. It includes a flexible but simple-to-program sequencer, with the option of microprocessor control for more elaborate readout schemes that may be data-dependent. All analog biases, digital clocks, and analog-to-digital conversion functions are incorporated and are connected to the nearby detectors with a short cable that can provide thermal isolation. The interface to the warm electronics is simple and robust through multiple LVDS channels. It also includes features that support parallel operation of multiple ASICs to control detectors that may have more capability or requirements than can be supported by a single chip.

  18. Effect of layer composition on band spectrum of CdxHg1-xTe - CdyHg1-yTe-type superlattices

    International Nuclear Information System (INIS)

    Gerchikov, L.G.; Subashiev, A.V.; Salman Dalla

    1993-01-01

    Evolution of energy spectrum of Cd x Hg 1-x Te -Cd y Hg 1-y Te superlattices at variation of layer composition is considered. Transition from 3 type superlattice to 1 type superlattice occurring for y=0.16 is studied comprehensively. In this case, dependence of the width of superlattice forbidden zone on layer thickness is shown to become more smooth, than in CdTe - HgTe superlattice and it gives more possibilities to use such superlattices for making IR phototransistors. 10 refs., 4 figs

  19. A novel, highly efficient cavity backshort design for far-infrared TES detectors

    Science.gov (United States)

    Bracken, C.; de Lange, G.; Audley, M. D.; Trappe, N.; Murphy, J. A.; Gradziel, M.; Vreeling, W.-J.; Watson, D.

    2018-03-01

    In this paper we present a new cavity backshort design for TES (transition edge sensor) detectors which will provide increased coupling of the incoming astronomical signal to the detectors. The increased coupling results from the improved geometry of the cavities, where the geometry is a consequence of the proposed chemical etching manufacturing technique. Using a number of modelling techniques, predicted results of the performance of the cavities for frequencies of 4.3-10 THz are presented and compared to more standard cavity designs. Excellent optical efficiency is demonstrated, with improved response flatness across the band. In order to verify the simulated results, a scaled model cavity was built for testing at the lower W-band frequencies (75-100 GHz) with a VNA system. Further testing of the scale model at THz frequencies was carried out using a globar and bolometer via an FTS measurement set-up. The experimental results are presented, and compared to the simulations. Although there is relatively poor comparison between simulation and measurement at some frequencies, the discrepancies are explained by means of higher-mode excitation in the measured cavity which are not accounted for in the single-mode simulations. To verify this assumption, a better behaved cylindrical cavity is simulated and measured, where excellent agreement is demonstrated in those results. It can be concluded that both the simulations and the supporting measurements give confidence that this novel cavity design will indeed provide much-improved optical coupling for TES detectors in the far-infrared/THz band.

  20. Lateral structure of (TiSe2)n(NbSe2)m superlattices

    International Nuclear Information System (INIS)

    Noh, M.; Shin, H.; Jeong, K.; Spear, J.; Johnson, D.C.; Kevan, S.D.; Warwick, T.

    1997-01-01

    The structures of a series of (TiSe 2 ) n (NbSe 2 ) m superlattices grown through controlled crystallization of designed multilayer reactants have been studied. X-ray diffraction of the data of the superlattices after crystallization show considerable preferred orientation, with the basal plane of the dichalcogenide structure parallel to the substrate to within 0.1 degree. Lattice refinement using the observed (00scr(l)) diffraction maxima yields lattice parameters along the c axis that are consistent with those expected based on the target superlattices and lattice parameters of the binary constituents. These (00scr(l)) diffraction data, however, contain no information about the crystalline structure in the ab plane of the superlattice associated with the preferred c-axis orientation. Off-specular x-ray diffraction (XRD), scanning electron microscopy, and scanning transmission x-ray microscopy (STXM) were used to explore the structure and homogeneity of the superlattices in the ab plane. XRD results rule out preferred long-range orientational order of the ab plane. Between grains, both the backscattered electron images and STXM images show grain domain structure in the ab plane with a characteristic grain domain size of approximately 50 μm. X-ray absorption microscopy in the STXM mode obtained at the Ti L 2,3 edge shows that the titanium in the superlattices is present as both octahedral Ti consistent with the TiSe 2 structure and metallic Ti. A comparison of the data obtained from these techniques highlights chemical information, which can be deduced on a submicrometer range from the space resolved spectra obtained using STXM. copyright 1997 American Institute of Physics

  1. Infrared detectors and emitters on the basis of semiconductor quantum structures

    International Nuclear Information System (INIS)

    Kruck, P. R.

    1997-08-01

    Intersubband transitions in Si/SiGe and GaAs/AlGaAs semiconductor quantum structures have been investigated with respect to possible application as infrared detectors and emitters. Investigation of the polarization dependence of subband absorption in Si/SiGe quantum wells shows both transverse magnetic and transverse electric polarized excitations. Intersubband transitions to several excited states are identified by comparison with self-consistent Luttinger-Kohn type calculations. On the basis of these investigations a quantum well infrared photodetector operating between 3 and 8 μm with a detectivity as high as D*=2 x 10 10 cm Hz 1/2 W -1 under normal incidence illumination and at an operating temperature of T=77K is realized. The polarization dependence of the photoconductivity shows the importance of both the absorption and the vertical transport properties of the photoexcited carriers for the detection mechanism. On the basis of the GaAs/AlGaAs material system a unipolar quantum cascade light emitting diode (LED) has been realized. The LED operates at a wavelength of 6.9 μm. A detailed analysis of the electroluminescence spectra shows a linewidth as narrow as 14 meV at cryogenic temperatures, increasing to 20 meV at room temperature. For typical drive-current densities of 1 kA/cm 2 the optical output power lies in the ten nanowatt range. (author)

  2. Theory of transmission through disordered superlattices

    DEFF Research Database (Denmark)

    Wacker, Andreas; Hu, Ben Yu-Kuang

    1999-01-01

    We derive a theory for transmission through disordered finite superlattices in which the interface roughness scattering is treated by disorder averaging. This procedure permits efficient calculation of the transmission through samples with large cross sections. These calculations can be performed...

  3. Reactive molecular beam epitaxial growth and in situ photoemission spectroscopy study of iridate superlattices

    Directory of Open Access Journals (Sweden)

    C. C. Fan

    2017-08-01

    Full Text Available High-quality (001-oriented perovskite [(SrIrO3m/(SrTiO3] superlattices (m=1/2, 1, 2, 3 and ∞ films have been grown on SrTiO3(001 epitaxially using reactive molecular beam epitaxy. Compared to previously reported superlattices synthesized by pulsed laser deposition, our superlattices exhibit superior crystalline, interface and surface structure, which have been confirmed by high-resolution X-ray diffraction, scanning transmission electron microscopy and atomic force microscopy, respectively. The transport measurements confirm a novel insulator-metal transition with the change of dimensionality in these superlattices, and our first systematic in situ photoemission spectroscopy study indicates that the increasing strength of effective correlations induced by reducing dimensionality would be the dominating origin of this transition.

  4. Engineering the oxygen coordination in digital superlattices

    Science.gov (United States)

    Cook, Seyoung; Andersen, Tassie K.; Hong, Hawoong; Rosenberg, Richard A.; Marks, Laurence D.; Fong, Dillon D.

    2017-12-01

    The oxygen sublattice in complex oxides is typically composed of corner-shared polyhedra, with transition metals at their centers. The electronic and chemical properties of the oxide depend on the type and geometric arrangement of these polyhedra, which can be controlled through epitaxial synthesis. Here, we use oxide molecular beam epitaxy to create SrCoOx:SrTiO3 superlattices with tunable oxygen coordination environments and sublattice geometries. Using synchrotron X-ray scattering in combination with soft X-ray spectroscopy, we find that the chemical state of Co can be varied with the polyhedral arrangement, with higher Co oxidation states increasing the valence band maximum. This work demonstrates a new strategy for engineering unique electronic structures in the transition metal oxides using short-period superlattices.

  5. Advances in detector technologies for visible and infrared wavefront sensing

    Science.gov (United States)

    Feautrier, Philippe; Gach, Jean-Luc; Downing, Mark; Jorden, Paul; Kolb, Johann; Rothman, Johan; Fusco, Thierry; Balard, Philippe; Stadler, Eric; Guillaume, Christian; Boutolleau, David; Destefanis, Gérard; Lhermet, Nicolas; Pacaud, Olivier; Vuillermet, Michel; Kerlain, Alexandre; Hubin, Norbert; Reyes, Javier; Kasper, Markus; Ivert, Olaf; Suske, Wolfgang; Walker, Andrew; Skegg, Michael; Derelle, Sophie; Deschamps, Joel; Robert, Clélia; Vedrenne, Nicolas; Chazalet, Frédéric; Tanchon, Julien; Trollier, Thierry; Ravex, Alain; Zins, Gérard; Kern, Pierre; Moulin, Thibaut; Preis, Olivier

    2012-07-01

    detector with a readout noise of 3 e (goal 1e) at 700 Hz frame rate. The LGSD is a scaling of the NGSD with 1760x1680 pixels and 3 e readout noise (goal 1e) at 700 Hz (goal 1000 Hz) frame rate. New technologies will be developed for that purpose: advanced CMOS pixel architecture, CMOS back thinned and back illuminated device for very high QE, full digital outputs with signal digital conversion on chip. In addition, the CMOS technology is extremely robust in a telescope environment. Both detectors will be used on the European ELT but also interest potentially all giant telescopes under development. Additional developments also started for wavefront sensing in the infrared based on a new technological breakthrough using ultra low noise Avalanche Photodiode (APD) arrays within the RAPID project. Developed by the SOFRADIR and CEA/LETI manufacturers, the latter will offer a 320x240 8 outputs 30 microns IR array, sensitive from 0.4 to 3.2 microns, with 2 e readout noise at 1500 Hz frame rate. The high QE response is almost flat over this wavelength range. Advanced packaging with miniature cryostat using liquid nitrogen free pulse tube cryocoolers is currently developed for this programme in order to allow use on this detector in any type of environment. First results of this project are detailed here. These programs are held with several partners, among them are the French astronomical laboratories (LAM, OHP, IPAG), the detector manufacturers (e2v technologies, Sofradir, CEA/LETI) and other partners (ESO, ONERA, IAC, GTC). Funding is: Opticon FP6 and FP7 from European Commission, ESO, CNRS and Université de Provence, Sofradir, ONERA, CEA/LETI and the French FUI (DGCIS).

  6. High-electric-field quantum transport theory for semiconductor superlattices

    International Nuclear Information System (INIS)

    Nguyen Hong Shon; Nazareno, H.N.

    1995-12-01

    Based on the Baym-Kadanoff-Keldysh nonequilibrium Green's functions technique, a quantum transport theory for semiconductor superlattices under high-electric field is developed. This theory is capable of considering collisional broadening, intra-collisional field effects and band transport and hopping regimes simultaneously. Numerical calculations for narrow-miniband superlattices in high electric field, when the hopping regime dominates are in reasonable agreement with experimental results and show a significant deviation from the Boltzmann theory. A semiphenomenological formula for current density in hopping regime is proposed. (author). 60 refs, 4 figs

  7. Transport in a magnetic field modulated graphene superlattice.

    Science.gov (United States)

    Li, Yu-Xian

    2010-01-13

    Using the transfer matrix method, we study the transport properties through a magnetic field modulated graphene superlattice. It is found that the electrostatic barrier, the magnetic vector potential, and the number of wells in a superlattice modify the transmission remarkably. The angular dependent transmission is blocked by the magnetic vector potential because of the appearance of the evanescent states at certain incident angles, and the region of Klein tunneling shifts to the left. The angularly averaged conductivities exhibit oscillatory behavior. The magnitude and period of oscillation depend sensitively on the height of the electrostatic barrier, the number of wells, and the strength of the modulated magnetic field.

  8. Exploration of molecular interactions in cholesterol superlattices: effect of multibody interactions.

    Science.gov (United States)

    Huang, Juyang

    2002-08-01

    Experimental evidences have indicated that cholesterol may adapt highly regular lateral distributions (i.e., superlattices) in a phospholipid bilayer. We investigated the formations of superlattices at cholesterol mole fraction of 0.154, 0.25, 0.40, and 0.5 using Monte Carlo simulation. We found that in general, conventional pairwise-additive interactions cannot produce superlattices. Instead, a multibody (nonpairwise) interaction is required. Cholesterol superlattice formation reveals that although the overall interaction between cholesterol and phospholipids is favorable, it contains two large opposing components: an interaction favoring cholesterol-phospholipid mixing and an unfavorable acyl chain multibody interaction that increases nonlinearly with the number of cholesterol contacts. The magnitudes of interactions are in the order of kT. The physical origins of these interactions can be explained by our umbrella model. They most likely come from the requirement for polar phospholipid headgroups to cover the nonpolar cholesterol to avoid the exposure of cholesterol to water and from the sharp decreasing of acyl chain conformation entropy due to cholesterol contact. This study together with our previous work demonstrate that the driving force of cholesterol-phospholipid mixing is a hydrophobic interaction, and multibody interactions dominate others over a wide range of cholesterol concentration.

  9. Short-wave infrared barriode detectors using InGaAsSb absorption material lattice matched to GaSb

    Energy Technology Data Exchange (ETDEWEB)

    Craig, A. P.; Percy, B.; Marshall, A. R. J. [Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom); Jain, M. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Wicks, G.; Hossain, K. [Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); Golding, T. [Amethyst Research Ltd., Kelvin Campus, West of Scotland Science Park, Glasgow G20 0SP (United Kingdom); Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401 (United States); McEwan, K.; Howle, C. [Defence Science and Technology Laboratory, Porton Down, Salisbury, Wiltshire SP4 0JQ (United Kingdom)

    2015-05-18

    Short-wave infrared barriode detectors were grown by molecular beam epitaxy. An absorption layer composition of In{sub 0.28}Ga{sub 0.72}As{sub 0.25}Sb{sub 0.75} allowed for lattice matching to GaSb and cut-off wavelengths of 2.9 μm at 250 K and 3.0 μm at room temperature. Arrhenius plots of the dark current density showed diffusion limited dark currents approaching those expected for optimized HgCdTe-based detectors. Specific detectivity figures of around 7×10{sup 10} Jones and 1×10{sup 10} Jones were calculated, for 240 K and room temperature, respectively. Significantly, these devices could support focal plane arrays working at higher operating temperatures.

  10. Josephson effect far-infrared detector

    International Nuclear Information System (INIS)

    Shapiro, S.

    1971-01-01

    Four Josephson effect schemes for detection of far-infrared radiation are reviewed: Video broad-band detection, regenerative detection, conventional mixing for monochromatic signals, and self-mixing or frequency conversion. (U.S.)

  11. Tuning the electrical and optical anisotropy of a monolayer black phosphorus magnetic superlattice

    Science.gov (United States)

    Li, X. J.; Yu, J. H.; Luo, K.; Wu, Z. H.; Yang, W.

    2018-04-01

    We investigate theoretically the effects of modulated periodic perpendicular magnetic fields on the electronic states and optical absorption spectrum in monolayer black phosphorus (phosphorene). We demonstrate that different phosphorene magnetic superlattice (PMS) orientations can give rise to distinct energy spectra, i.e. tuning the intrinsic electronic anisotropy. Rashba spin-orbit coupling (RSOC) develops a spin-splitting energy dispersion in this phosphorene magnetic superlattice. Anisotropic momentum-dependent carrier distributions along/perpendicular to the magnetic strips are demonstrated. The manipulations of these exotic electronic properties by tuning superlattice geometry, magnetic field and the RSOC term are addressed systematically. Accordingly, we find bright-to-dark transitions in the ground-state electron-hole pair transition rate spectrum and the PMS orientation-dependent anisotropic optical absorption spectrum. This feature offers us a practical way of modulating the electronic anisotropy in phosphorene by magnetic superlattice configurations and detecting this modulation capability by using an optical technique.

  12. Dynamic localization and negative absolute conductance in terahertz driven semiconductor superlattices

    International Nuclear Information System (INIS)

    Keay, B.J.; Allen, S.J.; Campman, K.L.

    1995-01-01

    We report the first observation of Negative Absolute Conductance (NAC), dynamic localization and multiphoton stimulated emission assisted tunneling in terahertz driven semiconductor superlattices. Theories predicting NAC in semiconductor superlattices subjected to AC electric fields have existed for twenty years, but have never been verified experimentally. Most theories are based upon semiclassical arguments and are only valid for superlattices in the miniband or coherent tunneling regime. We are not aware of models predicting NAC in superlattices in the sequential tunneling regime, although there has been recent theoretical work on double-barrier structures. Perhaps the most remarkable result is found in the power dependence of the current-voltage (I-V) characteristics near zero DC bias. As the laser power is increased the current decreases towards zero and then becomes negative. This result implies that the electrons are absorbing energy from the laser field, producing a net current in the direction opposite to the applied voltage. NAC around zero DC bias is a particularly surprising observation considering photon-assisted tunneling is not expected to be observable between the ground states of neighboring quantum wells in a semiconductor superlattice. Contrary to this believe our results are most readily attributable to photon absorption and multiphoton emission between ground states of neighboring wells. The I-V characteristics measured in the presence of terahertz radiation at low DC bias also contain steps and plateaus analogous to photon-assisted steps observed in superconducting junctions. As many as three steps have been clearly resolved corresponding to stimulated emission into the terahertz field by a three-photon process

  13. Infrared LED Array For Silicon Strip Detector Qualification

    CERN Document Server

    Dirkes, Guido; Hartmann, Frank; Heier, Stefan; Schwerdtfeger, Wolfgang; Waldschmitt, M; Weiler, K W; Weseler, Siegfried

    2003-01-01

    The enormous amount of silicon strip detector modules for the CMS tracker requires a test-sytem to allow qualification of each individual detector module and its front-end electronics within minutes. The objective is to test the detector with a physical signal. Signals are generated in the detector by illumination with lightpulses emitted by a LED at 950~nm and with a rise time of 10~ns. In order to avoid a detector moving, an array of 64 LEDs is used, overlaping the complete detector width. The total length of an array is 15~cm. The spot size of an individual LED is controlled by apertures to illuminate about 25 strips. Furthermore it is possible to simulate the high leakage current of irradiated sensors by constant illumination of the sensor. This provides an effective mean to identfy pinholes on a sensor.

  14. Stability and dynamic of strain mediated adatom superlattices on Cu

    Science.gov (United States)

    Kappus, Wolfgang

    2013-03-01

    Substrate strain mediated adatom equilibrium density distributions have been calculated for Cu surfaces using two complementing methods. A hexagonal adatom superlattice in a coverage range up to 0.045 ML is derived for repulsive short range interactions. For zero short range interactions a hexagonal superstructure of adatom clusters is derived in a coverage range about 0.08 ML. Conditions for the stability of the superlattice against formation of dimers or clusters and degradation are analyzed using simple neighborhood models. Such models are also used to investigate the dynamic of adatoms within their superlattice neighborhood. Collective modes of adatom diffusion are proposed from the analogy with bulk lattice dynamics and methods for measurement are suggested. The recently put forward explanation of surface state mediated interactions for superstructures found in scanning tunneling microscopy experiments is put in question and strain mediated interactions are proposed as an alternative.

  15. Moire superlattice effects in graphene/boron-nitride van der Waals heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Wallbank, John R.; Chen, Xi; Fal' ko, Vladimir I. [Department of Physics, Lancaster University, Lancaster (United Kingdom); Mucha-Kruczynski, Marcin [Department of Physics, University of Bath (United Kingdom)

    2015-06-15

    Van der Waals heterostructures of graphene and hexagonal boron nitride feature a moire superlattice for graphene's Dirac electrons. Here, we review the effects generated by this superlattice, including a specific miniband structure featuring gaps and secondary Dirac points, and a fractal spectrum of magnetic minibands known as Hofstadter's butterfly. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  16. Detecting an infrared photon within an hour. Transition-edge detector at ALPS-II

    Energy Technology Data Exchange (ETDEWEB)

    Dreyling-Eschweiler, Jan [Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany); Hamburg Univ. (Germany). Inst. fuer Experimentalphysik; Horns, Dieter [Hamburg Univ. (Germany). Inst. fuer Experimentalphysik; Collaboration: ALPS-II collaboration

    2013-09-15

    An essential design requirement of the ALPS-II experiment is the efficient detection of single photons with a very low instrumental background of 10 {mu}Hz. In 2011 the ALPS collaboration started to set up a TES detector (Transition-Edge Sensor) for ALPS-II, the second phase of the experiment. Since mid of 2013 the setup is ready for characterization in the ALPS laboratory: an ADR cryostat (Adiabatic Demagnetization Refrigerator) as millikelvin environment, a low noise SQUID (Superconducting Quantum Interference Device) with electronics for read-out and a fiber-coupled high-efficient TES for near-infrared photons as sensor. First measurements have shown a good discrimination between noise and 1064 nm signals.

  17. Detecting an infrared photon within an hour. Transition-edge detector at ALPS-II

    International Nuclear Information System (INIS)

    Dreyling-Eschweiler, Jan; Hamburg Univ.; Horns, Dieter

    2013-09-01

    An essential design requirement of the ALPS-II experiment is the efficient detection of single photons with a very low instrumental background of 10 μHz. In 2011 the ALPS collaboration started to set up a TES detector (Transition-Edge Sensor) for ALPS-II, the second phase of the experiment. Since mid of 2013 the setup is ready for characterization in the ALPS laboratory: an ADR cryostat (Adiabatic Demagnetization Refrigerator) as millikelvin environment, a low noise SQUID (Superconducting Quantum Interference Device) with electronics for read-out and a fiber-coupled high-efficient TES for near-infrared photons as sensor. First measurements have shown a good discrimination between noise and 1064 nm signals.

  18. Rectification of terahertz radiation in semiconductor superlattices in the absence of domains

    International Nuclear Information System (INIS)

    Isohätälä, J; Alekseev, K N

    2012-01-01

    We study theoretically the dynamical rectification of a terahertz AC electric field, i.e. the DC current and voltage response to the incident radiation, in strongly coupled semiconductor superlattices. We address the problem of stability against electric field domains: a spontaneous DC voltage is known to appear exactly for parameters for which a spatially homogeneous electron distribution is unstable. We show that by applying a weak direct current bias the rectifier can be switched from a state with zero DC voltage to one with a finite voltage in full absence of domains. The switching occurs near the conditions of dynamical symmetry breaking of an unbiased semiconductor superlattice. Therefore our scheme allows for the generation of DC voltages that would otherwise be unreachable due to domain instabilities. Furthermore, for realistic, highly doped wide miniband superlattices at room temperature, the generated DC field can be nearly quantized, that is, be approximately proportional to an integer multiple of ħω/ea where a is the superlattice period and ω is the AC field frequency. (paper)

  19. The effect of interfacial charge transfer on ferromagnetism in perovskite oxide superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Yang, F. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Gu, M. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science; Arenholz, E. [Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Browning, N. D. [Univ. of California, Davis, CA (United States). Department of Molecular and Cellular Biology; Takamura, Y. [Univ. of California, Davis, CA (United States). Department of Chemical Engineering and Materials Science

    2012-01-05

    We investigate the structural, magnetic, and electrical properties of superlattices composed of the ferromagnetic/metal La0.7Sr0.3MnO3 and non-magnetic/metal La0.5Sr0.5TiO3 grown on (001)-oriented SrTiO3 substrates. Using a combination of bulk magnetometry, soft x-ray magnetic spectroscopy, and scanning transmission electron microscopy, we demonstrate that robust ferromagnetic properties can be maintained in this superlattice system where charge transfer at the interfaces is minimized. Thus, ferromagnetism can be controlled effectively through the chemical identity and the thickness of the individual superlattice layers.

  20. Overview of DRS uncooled VOx infrared detector development

    Science.gov (United States)

    Li, Chuan; Han, C. J.; Skidmore, George

    2011-06-01

    Significant progress has been made over the past decade on uncooled focal plane array technologies and production capabilities. The detector pixel dimensions have continually decreased with an increase in pixel performance making large format, high-density array products affordable. In turn, this has resulted in the proliferation of uncooled IR detectors in commercial and military markets. Presently, uncooled detectors are widely used in firefighting, surveillance, industrial process monitoring, machine vision, and medical applications. Within the military arena, uncooled detectors are ubiquitous in Army soldier systems such as weapon sights, driver's viewers, and helmet-mounted sights. Uncooled detectors are also employed in airborne and ground surveillance sensors including unmanned aerial vehicles and robot vehicles.

  1. Magnetism and superconductivity in neodymium/lanthanum superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Sarthour, R.S.; McMorrow, Desmond Francis

    1997-01-01

    bilayers. Magnetization studies reveal the onset of superconductivity at a temperature comparable to bulk DHCP La, and the results suggest coupling across the antiferromagnetic Nd layers. The magnetic structures, investigated using neutron diffraction techniques, resemble those found in bulk Nd....... For the cubic sites of the DHCP structure the magnetic order is confined to individual Nd blocks. However, the magnetic order on the Nd hexagonal sites propagates coherently through the La, even when it becomes superconducting. (C) 1998 Elsevier Science B.V. All rights reserved.......A single-crystal Nd30La10 superlattice grown using molecular beam epitaxy is found to consist of alternating antiferromagnetic and superconducting layers at low temperature. The superlattice has the DHCP crystal structure, and the stacking sequence of close-packed planes is coherent over many...

  2. Alternating current-driven graphene superlattices: Kinks, dissipative solitons, dynamic chaotization

    International Nuclear Information System (INIS)

    Kryuchkov, S. V.; Kukhar', E. I.

    2015-01-01

    The possibility of the solitary electromagnetic wave formation in graphene superlattice subjected to the electromagnetic radiation is discussed. The chaotic behavior of the electron subsystem in graphene superlattice is studied by Melnikov method. Dynamic chaos of electrons is shown to appear for certain intervals of frequencies of incident electromagnetic radiation. The frequency dependence of the radiation critical amplitude which determines the bound of chaos appearance is investigated. The values of radiation frequency at which the critical amplitude increases indefinitely were found

  3. Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

    KAUST Repository

    Choi, Joshua J.; Bealing, Clive R.; Bian, Kaifu; Hughes, Kevin J.; Zhang, Wenyu; Smilgies, Detlef-M.; Hennig, Richard G.; Engstrom, James R.; Hanrath, Tobias

    2011-01-01

    The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

  4. Controlling Nanocrystal Superlattice Symmetry and Shape-Anisotropic Interactions through Variable Ligand Surface Coverage

    KAUST Repository

    Choi, Joshua J.

    2011-03-09

    The assembly of colloidal nanocrystals (NCs) into superstructures with long-range translational and orientational order is sensitive to the molecular interactions between ligands bound to the NC surface. We illustrate how ligand coverage on colloidal PbS NCs can be exploited as a tunable parameter to direct the self-assembly of superlattices with predefined symmetry. We show that PbS NCs with dense ligand coverage assemble into face-centered cubic (fcc) superlattices whereas NCs with sparse ligand coverage assemble into body-centered cubic (bcc) superlattices which also exhibit orientational ordering of NCs in their lattice sites. Surface chemistry characterization combined with density functional theory calculations suggest that the loss of ligands occurs preferentially on {100} than on reconstructed {111} NC facets. The resulting anisotropic ligand distribution amplifies the role of NC shape in the assembly and leads to the formation of superlattices with translational and orientational order. © 2011 American Chemical Society.

  5. Observation of galactic far-infrared ray

    International Nuclear Information System (INIS)

    Maihara, Toshinori; Oda, Naoki; Okuda, Haruyuki; Sugiyama, Takuya; Sakai, Kiyomi.

    1978-01-01

    Galactic far-infrared was observed to study the spatial distribution of interstellar dust. Far-infrared is emitted by interstellar dust distributing throughout the galactic plane. The observation of far-infrared is very important to study the overall structure of the galaxy, that is the structure of the galactic arm and gas distribution. The balloon experiment was conducted on May 25, 1978. The detector was a germanium bolometer cooled by liquid helium. The size of the detector is 1.6 mm in diameter. The geometrical factor was 4 x 10 3 cm 2 sr. The result showed that the longitude distribution of far-infrared at 150 μm correlated with H 166 α recombination line. This indicates that the observed far-infrared is emitted by interstellar dust heated by photons of Lyman continuum. (Yoshimori, M.)

  6. Superlattice Microstructured Optical Fiber

    Science.gov (United States)

    Tse, Ming-Leung Vincent; Liu, Zhengyong; Cho, Lok-Hin; Lu, Chao; Wai, Ping-Kong Alex; Tam, Hwa-Yaw

    2014-01-01

    A generic three-stage stack-and-draw method is demonstrated for the fabrication of complex-microstructured optical fibers. We report the fabrication and characterization of a silica superlattice microstructured fiber with more than 800 rhomboidally arranged air-holes. A polarization-maintaining fiber with a birefringence of 8.5 × 10−4 is demonstrated. The birefringent property of the fiber is found to be highly insensitive to external environmental effects, such as pressure. PMID:28788693

  7. Nanoscale form dictates mesoscale function in plasmonic DNA–nanoparticle superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ross, Michael B.; Ku, Jessie C.; Vaccarezza, Victoria M.; Schatz, George C.; Mirkin , Chad A. (NWU)

    2016-06-15

    The nanoscale manipulation of matter allows properties to be created in a material that would be difficult or even impossible to achieve in the bulk state. Progress towards such functional nanoscale architectures requires the development of methods to precisely locate nanoscale objects in three dimensions and for the formation of rigorous structure–function relationships across multiple size regimes (beginning from the nanoscale). Here, we use DNA as a programmable ligand to show that two- and three-dimensional mesoscale superlattice crystals with precisely engineered optical properties can be assembled from the bottom up. The superlattices can transition from exhibiting the properties of the constituent plasmonic nanoparticles to adopting the photonic properties defined by the mesoscale crystal (here a rhombic dodecahedron) by controlling the spacing between the gold nanoparticle building blocks. Furthermore, we develop a generally applicable theoretical framework that illustrates how crystal habit can be a design consideration for controlling far-field extinction and light confinement in plasmonic metamaterial superlattices.

  8. Single-crystal FCC and DHCP phases in Ce/Pr superlattices

    International Nuclear Information System (INIS)

    Lee, S.; Goff, J.P.; Ward, R.C.C.; Wells, M.R.; McIntyre, G.J.

    2002-01-01

    Cerium usually comprises a mixture of polycrystalline FCC and DHCP allotropes. Single-crystal Ce has been stabilised in Ce/Pr superlattices grown using molecular beam epitaxy. It is found that FCC or DHCP phases can be obtained depending on superlattice composition and growth conditions. Low-temperature neutron scattering was performed on Ce/Pr samples using the triple-axis spectrometer D10 at the ILL. Such measurements revealed one sample, [Ce 20 Pr 20 ] 60 , to be a single crystal with a DHCP unit cell; while another, [Ce 30 Pr 10 ] 56 , was a mixture of FCC and DHCP phases. Antiferromagnetic ordering of magnetic moments was observed in the DHCP sample (T N =11.1 K) with a magnetic structure similar to that found in bulk β-Ce. Surprisingly, the magnetic ordering was found to be confined to single Ce blocks. Furthermore, it was found that, at low temperatures, the lattice contraction observed for bulk FCC Ce was suppressed in Ce/Pr superlattices. (orig.)

  9. Modulating nanoparticle superlattice structure using proteins with tunable bond distributions

    International Nuclear Information System (INIS)

    McMillan, Janet R.; Brodin, Jeffrey D.; Millan, Jaime A.; Lee, Byeongdu; Olvera de la Cruz, Monica; Mirkin, Chad A.

    2017-01-01

    Here, we investigate the use of proteins with tunable DNA modification distributions to modulate nanoparticle superlattice structure. Using Beta-galactosidase (βgal) as a model system, we have employed the orthogonal chemical reactivities of surface amines and thiols to synthesize protein-DNA conjugates with 36 evenly distributed or 8 specifically positioned oligonucleotides. When assembled into crystalline superlattices with AuNPs, we find that the distribution of DNA modifications modulates the favored structure: βgal with uniformly distributed DNA bonding elements results in body-centered cubic crystals, whereas DNA functionalization of cysteines results in AB 2 packing. We probe the role of protein oligonucleotide number and conjugate size on this observation, which revealed the importance of oligonucleotide distribution and number in this observed assembly behavior. These results indicate that proteins with defined DNA-modification patterns are powerful tools to control the nanoparticle superlattices architecture, and establish the importance of oligonucleotide distribution in the assembly behavior of protein-DNA conjugates.

  10. Large negative differential resistance in graphene nanoribbon superlattices

    Science.gov (United States)

    Tseng, P.; Chen, C. H.; Hsu, S. A.; Hsueh, W. J.

    2018-05-01

    A graphene nanoribbon superlattice with a large negative differential resistance (NDR) is proposed. Our results show that the peak-to-valley ratio (PVR) of the graphene superlattices can reach 21 at room temperature with bias voltages between 90-220 mV, which is quite large compared with the one of traditional graphene-based devices. It is found that the NDR is strongly influenced by the thicknesses of the potential barrier. Therefore, the NDR effect can be optimized by designing a proper barrier thickness. The large NDR effect can be attributed to the splitting of the gap in transmission spectrum (segment of Wannier-Stark ladder) with larger thicknesses of barrier when the applied voltage increases.

  11. A possible radiation-resistant solar cell geometry using superlattices

    Science.gov (United States)

    Goradia, C.; Clark, R.; Brinker, D.

    1985-01-01

    A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

  12. Magnetic profiles in ferromagnetic/superconducting superlattices.

    Energy Technology Data Exchange (ETDEWEB)

    te Velthuis, S. G. E.; Hoffmann, A.; Santamaria, J.; Materials Science Division; Univ. Complutense de Madrid

    2007-02-28

    The interplay between ferromagnetism and superconductivity has been of longstanding fundamental research interest to scientists, as the competition between these generally mutually exclusive types of long-range order gives rise to a rich variety of physical phenomena. A method of studying these exciting effects is by investigating artificially layered systems, i.e. alternating deposition of superconducting and ferromagnetic thin films on a substrate, which enables a straight-forward combination of the two types of long-range order and allows the study of how they compete at the interface over nanometer length scales. While originally studies focused on low temperature superconductors interchanged with metallic ferromagnets, in recent years the scope has broadened to include superlattices of high T{sub c} superconductors and colossal magnetoresistance oxides. Creating films where both the superconducting as well as the ferromagnetic layers are complex oxide materials with similar crystal structures (Figure 1), allows the creation of epitaxial superlattices, with potentially atomically flat and ordered interfaces.

  13. Organic p-n heterostructures and superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, Stefan [Lawrence Berkeley National Laboratory, Berkeley, CA (United States); Hinderhofer, Alexander; Gerlach, Alexander; Schreiber, Frank [Institut fuer Angewandte Physik, Tuebingen (Germany); Osso, Oriol [MATGAS 2000 A.I.E., Esfera UAB, Barcelona (Spain); Wang, Cheng; Hexemer, Alexander [Advanced Light Source, Berkeley, CA (United States)

    2009-07-01

    For many applications of organic semiconductors two components such as e.g. n and p-type layers are required, and the morphology of such heterostructures is crucial for their performance. Pentacene (PEN) is one of the most promising p-type molecular semiconductors and recently perfluoro-pentacene (PFP) has been identified as a good electron conducting material for complementary circuits with PEN. We use soft and hard X-ray reflectivity measurements, scanning transmission X-ray microscopy (STXM) and atomic force microscopy for structural investigations of PFP-PEN heterostructures. The chemical contrast between PEN and PFP in STXM allows us to determine the lateral length scales of p and n domains in a bilayer. For a superlattice of alternating PFP and PEN layers grown by organic molecular beam deposition, X-ray reflectivity measurements demonstrate good structural order. We find a superlattice reflection that varies strongly when tuning the X-ray energy around the fluorine edge, demonstrating that there are indeed alternating PFP and PEN layers.

  14. A weakly coupled semiconductor superlattice as a harmonic hypersonic-electrical transducer

    International Nuclear Information System (INIS)

    Poyser, C L; Akimov, A V; Campion, R P; Kent, A J; Balanov, A G

    2015-01-01

    We study experimentally and theoretically the effects of high-frequency strain pulse trains on the charge transport in a weakly coupled semiconductor superlattice. In a frequency range of the order of 100 GHz such excitation may be considered as single harmonic hypersonic excitation. While travelling along the axis of the SL, the hypersonic acoustic wavepacket affects the electron tunnelling, and thus governs the electrical current through the device. We reveal how the change of current depends on the parameters of the hypersonic excitation and on the bias applied to the superlattice. We have found that the changes in the transport properties of the superlattices caused by the acoustic excitation can be largely explained using the current–voltage relation of the unperturbed system. Our experimental measurements show multiple peaks in the dependence of the transferred charge on the repetition rate of the strain pulses in the train. We demonstrate that these resonances can be understood in terms of the spectrum of the applied acoustic perturbation after taking into account the multiple reflections in the metal film serving as a generator of hypersonic excitation. Our findings suggest an application of the semiconductor superlattice as a hypersonic-electrical transducer, which can be used in various microwave devices. (paper)

  15. Calculation of Energy Diagram of Asymmetric Graded-Band-Gap Semiconductor Superlattices.

    Science.gov (United States)

    Monastyrskii, Liubomyr S; Sokolovskii, Bogdan S; Alekseichyk, Mariya P

    2017-12-01

    The paper theoretically investigates the peculiarities of energy diagram of asymmetric graded-band-gap superlattices with linear coordinate dependences of band gap and electron affinity. For calculating the energy diagram of asymmetric graded-band-gap superlattices, linearized Poisson's equation has been solved for the two layers forming a period of the superlattice. The obtained coordinate dependences of edges of the conduction and valence bands demonstrate substantial transformation of the shape of the energy diagram at changing the period of the lattice and the ratio of width of the adjacent layers. The most marked changes in the energy diagram take place when the period of lattice is comparable with the Debye screening length. In the case when the lattice period is much smaller that the Debye screening length, the energy diagram has the shape of a sawtooth-like pattern.

  16. Crossover from incoherent to coherent phonon scattering in epitaxial oxide superlattices.

    Science.gov (United States)

    Ravichandran, Jayakanth; Yadav, Ajay K; Cheaito, Ramez; Rossen, Pim B; Soukiassian, Arsen; Suresha, S J; Duda, John C; Foley, Brian M; Lee, Che-Hui; Zhu, Ye; Lichtenberger, Arthur W; Moore, Joel E; Muller, David A; Schlom, Darrell G; Hopkins, Patrick E; Majumdar, Arun; Ramesh, Ramamoorthy; Zurbuchen, Mark A

    2014-02-01

    Elementary particles such as electrons or photons are frequent subjects of wave-nature-driven investigations, unlike collective excitations such as phonons. The demonstration of wave-particle crossover, in terms of macroscopic properties, is crucial to the understanding and application of the wave behaviour of matter. We present an unambiguous demonstration of the theoretically predicted crossover from diffuse (particle-like) to specular (wave-like) phonon scattering in epitaxial oxide superlattices, manifested by a minimum in lattice thermal conductivity as a function of interface density. We do so by synthesizing superlattices of electrically insulating perovskite oxides and systematically varying the interface density, with unit-cell precision, using two different epitaxial-growth techniques. These observations open up opportunities for studies on the wave nature of phonons, particularly phonon interference effects, using oxide superlattices as model systems, with extensive applications in thermoelectrics and thermal management.

  17. Development of high-capacity nickel-metal hydride batteries using superlattice hydrogen-absorbing alloys

    Science.gov (United States)

    Yasuoka, Shigekazu; Magari, Yoshifumi; Murata, Tetsuyuki; Tanaka, Tadayoshi; Ishida, Jun; Nakamura, Hiroshi; Nohma, Toshiyuki; Kihara, Masaru; Baba, Yoshitaka; Teraoka, Hirohito

    New R-Mg-Ni (R: rare earths) superlattice alloys with higher-capacity and higher-durability than the conventional Mm-Ni alloys with CaCu 5 structure have been developed. The oxidation resistibility of the superlattice alloys has been improved by optimizing the alloy composition by such as substituting aluminum for nickel and optimizing the magnesium content in order to prolong the battery life. High-capacity nickel-metal hydride batteries for the retail market, the Ni-MH2500/900 series (AA size type 2500 mAh, AAA size type 900 mAh), have been developed and commercialized by using an improved superlattice alloy for negative electrode material.

  18. Systems engineering and analysis of electro-optical and infrared systems

    CERN Document Server

    Arrasmith, William Wolfgang

    2015-01-01

    Introduction to Electro-optic and Infrared (EO/IR) Systems Engineering?Radiation in the Visible and Infrared Parts of the Electromagnetic SpectrumRadiation SourcesThe Effect of the Atmosphere on Optical PropagationBasic OpticsOptical ModulationThe Detection of Optical RadiationNoise in the Optical Detection ProcessTechnical Performance Measures and Metrics of Optical DetectorsModern Detectors and their Measures of PerformanceThe Effects of Cooling on Optical Detector NoiseSignal and Image ProcessingElectro-Optic and Infrared Systems AnalysisLaser Imaging Systems?Spectral Imaging?LIDAR and LADA

  19. Low temperature synthesis of Mo2C/W2C superlattices via ultra-thin modulated reactants

    International Nuclear Information System (INIS)

    Johnson, C.D.; Johnson, D.C.

    1996-01-01

    The authors report here a synthesis method of preparing carbide superlattices using ultra-thin modulated reactants. Initial investigations into the synthesis of the binary systems, Mo 2 C and W 2 C using ultra-thin modulated reactants revealed that both can be formed at relatively low temperatures (500 and 600 C respectively). DSC and XRD data suggested a two step reaction pathway involving interdiffusion of the initial modulated reactant followed by crystallization of the final product, if the modulation length is on the order of 10 angstrom. This information was used to form Mo 2 C/W 2 C superlattices using the structure of the ultra-thin modulated reactant to control the final superlattice period. Relatively large superlattice modulations were kinetically trapped by having several repeat units of each binary within the total repeat of the initial reactant. DSC and XRD data again are consistent with a two step reaction pathway leading to the formation of carbide superlattices

  20. La détection infrarouge avec les plans focaux non refroidis : état de l'artUncooled focal plane infrared detectors: the state of the art

    Science.gov (United States)

    Tissot, Jean-Luc

    2003-12-01

    The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. LETI and ULIS have chosen from the very beginning to develop first a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease of manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the technology developed by CEA/LETI and its improvement for being able to designs 384×288 and 160×120 arrays with a pitch of 35 μm. Thermographic application needs high stability infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterized. These results will be presented. To cite this article: J

  1. Thermoelectric transport in superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Reinecke, T L; Broido, D A

    1997-07-01

    The thermoelectric transport properties of superlattices have been studied using an exact solution of the Boltzmann equation. The role of heat transport along the barrier layers, of carrier tunneling through the barriers, of valley degeneracy and of the well width and energy dependences of the carrier-phonon scattering rates on the thermoelectric figure of merit are given. Calculations are given for Bi{sub 2}Te{sub 3} and for PbTe, and the results of recent experiments are discussed.

  2. RAMAN SCATTERING BY ACOUSTIC PHONONS AND STRUCTURAL PROPERTIES OF FIBONACCI, THUE-MORSE AND RANDOM SUPERLATTICES

    OpenAIRE

    Merlin , R.; Bajema , K.; Nagle , J.; Ploog , K.

    1987-01-01

    We report structural studies of incommensurate and random GaAs-AlAs superlattices using Raman scattering by acoustic phonons. Properties of the structure factor of Fibonacci and Thue-Morse superlattices are discussed in some detail.

  3. Recent advances in infrared astronomy

    International Nuclear Information System (INIS)

    Robson, E.I.

    1980-01-01

    A background survey is given of developments in infrared astronomy during the last decade. Advantages obtained in using infrared wavelengths to penetrate the Earth's atmosphere and the detectors used for this work are considered. Infrared studies of, among other subjects, the stars, dust clouds, the centre of our galaxy and the 3k cosmic background radiation, are discussed. (UK)

  4. Band Structure and Quantum Confined Stark Effect in InN/GaN superlattices

    DEFF Research Database (Denmark)

    Gorczyca, I.; Suski, T.; Christensen, Niels Egede

    2012-01-01

    InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite InN/G...... wells and barriers one may tune band gaps over a wide spectral range, which provides flexibility in band gap engineering.......InN/GaN superlattices offer an important way of band gap engineering in the blue-green range of the spectrum. This approach represents a more controlled method than the band gap tuning in quantum well systems by application of InGaN alloys. The electronic structures of short-period wurtzite In......N/GaN(0001) superlattices are investigated, and the variation of the band gap with the thicknesses of the well and the barrier is discussed. Superlattices of the form mInN/nGaN with n ≥ m are simulated using band structure calculations in the Local Density Approximation with a semiempirical correction...

  5. Effects of anharmonic strain on the phase stability of epitaxial films and superlattices: Applications to noble metals

    International Nuclear Information System (INIS)

    Ozolins, V.; Wolverton, C.; Zunger, A.

    1998-01-01

    Epitaxial strain energies of epitaxial films and bulk superlattices are studied via first-principles total-energy calculations using the local-density approximation. Anharmonic effects due to large lattice mismatch, beyond the reach of the harmonic elasticity theory, are found to be very important in Cu/Au (lattice mismatch 12%), Cu/Ag (12%), and Ni/Au (15%). We find that left-angle 001 right-angle is the elastically soft direction for biaxial expansion of Cu and Ni, but it is left-angle 201 right-angle for large biaxial compression of Cu, Ag, and Au. The stability of superlattices is discussed in terms of the coherency strain and interfacial energies. We find that in phase separating systems such as Cu-Ag the superlattice formation energies decrease with superlattice period, and the interfacial energy is positive. Superlattices are formed easiest on (001) and hardest on (111) substrates. For ordering systems, such as Cu-Au and Ag-Au, the formation energy of superlattices increases with period, and interfacial energies are negative. These superlattices are formed easiest on (001) or (110) and hardest on (111) substrates. For Ni-Au we find a hybrid behavior: superlattices along left-angle 111 right-angle and left-angle 001 right-angle behave like phase separating systems, while for left-angle 110 right-angle they behave like ordering systems. Finally, recent experimental results on epitaxial stabilization of disordered Ni-Au and Cu-Ag alloys, immiscible in the bulk form, are explained in terms of destabilization of the phase separated state due to lattice mismatch between the substrate and constituents. copyright 1998 The American Physical Society

  6. Growth and characterization of materials for infrared detectors and nonlinear optical switches; Proceedings of the Meeting, Orlando, FL, Apr. 2, 3, 1991

    Science.gov (United States)

    Longshore, Randolph E.; Baars, Jan W.

    Papers included in these proceedings are grouped under the topics of infrared material growth and characterization, infrared detector physics, and nonlinear optics. Attention is given to interface demarcation in Bridgman-Stockbarger crystal growth of II-VI compounds, growth of CdTe-CdMnTe heterostructures by molecular beam epitaxy, and a photoconductivity decay method for determining the minority carrier lifetime of p-type HgCdTe. Consideration is also given to anodic oxides on HgZnTe, the characterization of anodic fluoride films on Hg(1-x)Cd(x)Te, optical response in high-temperature superconducting thin films, and pyroelectric linear array IR detectors with CCD multiplexer. Other papers are on structural and optical properties of melt-processed calcium aluminate fibers, the preparation and characterization of a new thermistor material for thermistor bolometer, and photoemission from quantum-confined structure of nonlinear optical materials. (For individual items see A93-26893 to A93-26895)

  7. Strain and Defect Engineering for Tailored Electrical Properties in Perovskite Oxide Thin Films and Superlattices

    Science.gov (United States)

    Hsing, Greg Hsiang-Chun

    Functional complex-oxides display a wide spectrum of physical properties, including ferromagnetism, piezoelectricity, ferroelectricity, photocatalytic and metal-insulating transition (MIT) behavior. Within this family, oxides with a perovskite structure have been widely studied, especially in the form of thin films and superlattices (heterostructures), which are strategically and industrially important because they offer a wide range of opportunities for electronic, piezoelectric and sensor applications. The first part of my thesis focuses on understanding and tuning of the built-in electric field found in PbTiO3/SrTiO3 (PTO/STO) ferroelectric superlattices and other ferroelectric films. The artificial layering in ferroelectric superlattices is a potential source of polarization asymmetry, where one polarization state is preferred over another. One manifestation of this asymmetry is a built-in electric field associated with shifted polarization hysteresis. Using off-axis RF-magnetron sputtering, we prepared several compositions of PTO/STO superlattice thin films; and for comparison PbTiO3/SrRuO 3 (PTO/SRO) superlattices, which have an additional intrinsic compositional asymmetry at the interface. Both theoretical modeling and experiments indicate that the layer-by-layer superlattice structure aligns the Pb-O vacancy defect dipoles in the c direction which contributes significantly to the built-in electric field; however the preferred polarization direction is different between the PTO/STO and PTO/SRO interface. By designing a hybrid superlattice that combines PTO/STO and PTO/SRO superlattices, we show the built-in electric field can be tuned to zero by changing the composition of the combo-superlattice. The second part of my thesis focuses on the epitaxial growth of SrCrO 3 (SCO) films. The inconsistent reports regarding its electrical and magnetic properties through the years stem from the compositionally and structurally ill-defined polycrystalline samples, but

  8. Free-Standing Metal Oxide Nanoparticle Superlattices Constructed with Engineered Protein Containers Show in Crystallo Catalytic Activity.

    Science.gov (United States)

    Lach, Marcel; Künzle, Matthias; Beck, Tobias

    2017-12-11

    The construction of defined nanostructured catalysts is challenging. In previous work, we established a strategy to assemble binary nanoparticle superlattices with oppositely charged protein containers as building blocks. Here, we show that these free-standing nanoparticle superlattices are catalytically active. The metal oxide nanoparticles inside the protein scaffold are accessible for a range of substrates and show oxidase-like and peroxidase-like activity. The stable superlattices can be reused for several reaction cycles. In contrast to bulk nanoparticle-based catalysts, which are prone to aggregation and difficult to characterize, nanoparticle superlattices based on engineered protein containers provide an innovative synthetic route to structurally defined heterogeneous catalysts with control over nanoparticle size and composition. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Field-effect transistor having a superlattice channel and high carrier velocities at high applied fields

    Science.gov (United States)

    Chaffin, R.J.; Dawson, L.R.; Fritz, I.J.; Osbourn, G.C.; Zipperian, T.E.

    1987-06-08

    A field effect transistor comprises a semiconductor having a source, a drain, a channel and a gate in operational relationship. The semiconductor is a strained layer superlattice comprising alternating quantum well and barrier layers, the quantum well layers and barrier layers being selected from the group of layer pairs consisting of InGaAs/AlGaAs, InAs/InAlGaAs, and InAs/InAlAsP. The layer thicknesses of the quantum well and barrier layers are sufficiently thin that the alternating layers constitute a superlattice which has a superlattice conduction band energy level structure in k-vector space. The layer thicknesses of the quantum well layers are selected to provide a superlattice L/sub 2D/-valley which has a shape which is substantially more two-dimensional than that of said bulk L-valley. 2 figs.

  10. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.; Hedhili, Mohamed N.; Cha, Dong Kyu; Tritt, Terry M.; Alshareef, Husam N.

    2014-01-01

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  11. Thermoelectric properties of strontium titanate superlattices incorporating niobium oxide nanolayers

    KAUST Repository

    Sarath Kumar, S. R.

    2014-04-22

    A novel superlattice structure based on epitaxial nanoscale layers of NbOx and Nb-doped SrTiO3 is fabricated using a layer-by-layer approach on lattice matched LAO substrates. The absolute Seebeck coefficient and electrical conductivity of the [(NbOx) a/(Nb-doped SrTiO3)b]20 superlattices (SLs) were found to increase with decreasing layer thickness ratio (a/b ratio), reaching, at high temperatures, a power factor that is comparable to epitaxial Nb-doped SrTiO3 (STNO) films (∼0.7 W m-1 K-1). High temperature studies reveal that the SLs behave as n-type semiconductors and undergo an irreversible change at a varying crossover temperature that depends on the a/b ratio. By use of high resolution X-ray photoelectron spectroscopy and X-ray diffraction, the irreversible changes are identified to be due to a phase transformation from cubic NbO to orthorhombic Nb2O5, which limits the highest temperature of stable operation of the superlattice to 950 K. © 2014 American Chemical Society.

  12. Bi-continuous Multi-component Nanocrystal Superlattices for Solar Energy Conversion

    Energy Technology Data Exchange (ETDEWEB)

    Kagan, Cherie [University of Pennsylvania; Murray, Christopher [University of Pennsylvania; Kikkawa, James [University of Pennsylvania; Engheta, Nader [University of Pennsylvania

    2017-06-14

    Our SISGR program studied an emerging class of nanomaterials wherein different combinations of semiconductor or semiconductor and plasmonic nanocrystals (NCs) are self-assembled into three-dimensional multi-component superlattices. The NC assemblies were designed to form bicontinuous semiconductor NC sublattices with type-II energy offsets to drive charge separation onto electron and hole transporting sublattices for collection and introduce plasmonic NCs to increase solar absorption and charge separation. Our group is expert in synthesizing and assembling an extraordinary variety of artificial systems by tailoring the NC building blocks and the superlattice unit cell geometry. Under this DOE BES Materials Chemistry program, we introduced chemical methods to control inter-particle distance and to dope NC assemblies, which enabled our demonstration of strong electronic communication between NCs and the use of NC thin films as electronic materials. We synthesized, assembled and structurally, spectroscopically, and electrically probed NC superlattices to understand and manipulate the flow of energy and charge toward discovering the design rules and optimizing these complex architectures to create materials that efficiently convert solar radiation into electricity.

  13. Waves in man-made materials: superlattice to metamaterials

    Science.gov (United States)

    Tsu, Raphael; Fiddy, Michael A.

    2014-07-01

    While artificial or man-made structures date back to Lord Rayleigh, the work started by Lewin in 1947, placing spheres onto cubic lattices, greatly enriched microwave materials and devices. It was very suggestive of both metamaterials and photonics crystals. Effective medium models were used to describe bulk properties with some success. The concept of metamaterials followed photonic crystals, and these both were introduced after the introduction of the man-made superlattices designed to enrich the class of materials for electronic devices. The work on serrated ridged waveguides by Kirschbaum and Tsu for the control of the refractive index of microwave lenses as well as microwave matching devices in 1959 used a combination of theory, such as Floquet's theory, Bloch theory in one dimension, as well as periodic lumped loading. There is much in common between metamaterials and superlattices, but in this paper, we discuss some practical limitations to both. It is pointed out that unlike superlattices where kl > 1 is the most important criterion, metamaterials try to avoid involve such restrictions. However, the natural random fluctuations that limit the properties of naturally occurring materials are shown to take a toll on the theoretical predictions of metamaterials. The question is how great that toll, i.e. how significant those fluctuations will be, in diminishing the unusual properties that metamaterials can exhibit.

  14. Manganite/Cuprate Superlattice as Artificial Reentrant Spin Glass

    KAUST Repository

    Ding, Junfeng

    2016-05-04

    Emerging physical phenomena at the unit-cell-controlled interfaces of transition-metal oxides have attracted lots of interest because of the rich physics and application opportunities. This work reports a reentrant spin glass behavior with strong magnetic memory effect discovered in oxide heterostructures composed of ultrathin manganite La0.7Sr0.3MnO3 (LSMO) and cuprate La2CuO4 (LCO) layers. These heterostructures are featured with enhanced ferromagnetism before entering the spin glass state: a Curie temperature of 246 K is observed in the superlattice with six-unit-cell LSMO layers, while the reference LSMO film with the same thickness shows much weaker magnetism. Furthermore, an insulator-metal transition emerges at the Curie temperature, and below the freezing temperature the superlattices can be considered as a glassy ferromagnetic insulator. These experimental results are closely related to the interfacial spin reconstruction revealed by the first-principles calculations, and the dependence of the reentrant spin glass behavior on the LSMO layer thickness is in line with the general phase diagram of a spin system derived from the infinite-range SK model. The results of this work underscore the manganite/cuprate superlattices as a versatile platform of creating artificial materials with tailored interfacial spin coupling and physical properties. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Detector Mount Design for IGRINS

    Directory of Open Access Journals (Sweden)

    Jae Sok Oh

    2014-06-01

    Full Text Available The Immersion Grating Infrared Spectrometer (IGRINS is a near-infrared wide-band high-resolution spectrograph jointly developed by the Korea Astronomy and Space Science Institute and the University of Texas at Austin. IGRINS employs three HAWAII-2RG Focal Plane Array (H2RG FPA detectors. We present the design and fabrication of the detector mount for the H2RG detector. The detector mount consists of a detector housing, an ASIC housing, a Field Flattener Lens (FFL mount, and a support base frame. The detector and the ASIC housing should be kept at 65 K and the support base frame at 130 K. Therefore they are thermally isolated by the support made of GFRP material. The detector mount is designed so that it has features of fine adjusting the position of the detector surface in the optical axis and of fine adjusting yaw and pitch angles in order to utilize as an optical system alignment compensator. We optimized the structural stability and thermal characteristics of the mount design using computer-aided 3D modeling and finite element analysis. Based on the structural and thermal analysis, the designed detector mount meets an optical stability tolerance and system thermal requirements. Actual detector mount fabricated based on the design has been installed into the IGRINS cryostat and successfully passed a vacuum test and a cold test.

  16. Hybrid active pixel sensors in infrared astronomy

    International Nuclear Information System (INIS)

    Finger, Gert; Dorn, Reinhold J.; Meyer, Manfred; Mehrgan, Leander; Stegmeier, Joerg; Moorwood, Alan

    2005-01-01

    Infrared astronomy is currently benefiting from three main technologies providing high-performance hybrid active pixel sensors. In the near infrared from 1 to 5 μm two technologies, both aiming for buttable 2Kx2K mosaics, are competing, namely InSb and HgCdTe grown by LPE or MBE on Al 2 O 3 , Si or CdZnTe substrates. Blocked impurity band Si:As arrays cover the mid infrared spectral range from 8 to 28 μm. Adaptive optics combined with multiple integral field units feeding high-resolution spectrographs drive the requirements for the array format of infrared sensors used at ground-based infrared observatories. The pixel performance is now approaching fundamental limits. In view of this development, a detection limit for the photon flux of the ideal detector will be derived, depending only on the temperature and the impedance of the detector. It will be shown that this limit is approximated by state of the art infrared arrays for long on-chip integrations. Different detector materials are compared and strategies to populate large focal planes are discussed. The need for the development of small-format low noise sensors for adaptive optics and interferometry will be pointed out

  17. Band structure of ABC-trilayer graphene superlattice

    International Nuclear Information System (INIS)

    Uddin, Salah; Chan, K. S.

    2014-01-01

    We investigate the effect of one-dimensional periodic potentials on the low energy band structure of ABC trilayer graphene first by assuming that all the three layers have the same potential. Extra Dirac points having the same electron hole crossing energy as that of the original Dirac point are generated by superlattice potentials with equal well and barrier widths. When the potential height is increased, the numbers of extra Dirac points are increased. The dispersions around the Dirac points are not isotropic. It is noted that the dispersion along the k y direction for k x  = 0 oscillates between a non-linear dispersion and a linear dispersion when the potential height is increased. When the well and barrier widths are not identical, the symmetry of the conduction and valence bands is broken. The extra Dirac points are shifted either upward or downward depending on the barrier and well widths from the zero energy, while the position of the central Dirac point oscillates with the superlattice potential height. By considering different potentials for different layers, extra Dirac points are generated not from the original Dirac points but from the valleys formed in the energy spectrum. Two extra Dirac points appear from each pair of touched valleys, so four Dirac points appeared in the spectrum at particular barrier height. By increasing the barrier height of superlattice potential two Dirac points merge into the original Dirac point. This emerging and merging of extra Dirac points is different from the equal potential case

  18. Energy minibands degeneration induced by magnetic field effects in graphene superlattices

    Science.gov (United States)

    Reyes-Villagrana, R. A.; Carrera-Escobedo, V. H.; Suárez-López, J. R.; Madrigal-Melchor, J.; Rodríguez-Vargas, I.

    2017-12-01

    Energy minibands are a basic feature of practically any superlattice. In this regard graphene superlattices are not the exception and recently miniband transport has been reported through magneto-transport measurements. In this work, we compute the energy miniband and transport characteristics for graphene superlattices in which the energy barriers are generated by magnetic and electric fields. The transfer matrix approach and the Landauer-Büttiker formalism have been implemented to calculate the energy minibands and the linear-regime conductance. We find that energy minibands are very sensitive to the magnetic field and become degenerate by rising it. We were also able to correlate the evolution of the energy minibands as a function of the magnetic field with the transport characteristics, finding that miniband transport can be destroyed by magnetic field effects. Here, it is important to remark that although magnetic field effects have been a key element to unveil miniband transport, they can also destroy it.

  19. Ab initio study of thermoelectric properties of doped SnO_2 superlattices

    International Nuclear Information System (INIS)

    Borges, P.D.; Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J.; Scolfaro, L.

    2015-01-01

    Transparent conductive oxides, such as tin dioxide (SnO_2), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO_2, as well as of Sb and Zn planar (or delta)-doped layers in SnO_2 forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO_2 SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO_2-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO_2 superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  20. Propagation and generation of Josephson radiation in superconductor/insulator superlattices

    International Nuclear Information System (INIS)

    Auvil, P.R.; Ketterson, J.B.

    1987-01-01

    The wave propagation and generation characteristics of a metal-insulator superlattice are calculated in a low-field Landau--Ginzburg model, including Josephson coupling through the insulating layers. It is shown that a significant increase in the phase velocity of the electromagnetic waves propagating in the superlattice occurs when the thickness of the superconducting layers becomes much less than the London penetration depth, suggesting that increased output of Josephson radiation may be achieved from such structures. Wave generation via the ac Josephson effect (in the presence of applied dc electric and magnetic fields) is studied for both parallel and series driven multilayer structures

  1. THz laser based on quasi-periodic AlGaAs superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Malyshev, K V [N.E. Bauman Moscow State Technical University, Moscow (Russian Federation)

    2013-06-30

    The use of quasi-periodic AlGaAs superlattices as an active element of a quantum cascade laser of terahertz range is proposed and theoretically investigated. A multi-colour emission, having from three to six peaks of optical gain, is found in Fibonacci, Thue-Morse, and figurate superlattices in electric fields of intensity F = 11 - 13 kV cm{sup -1} in the frequency range f = 2 - 4 THz. The peaks depend linearly on the electric field, retain the height of 20 cm{sup -1}, and strongly depend on the thickness of the AlGaAs-layers. (lasers)

  2. Positron probing of electron momentum density in GaAs-AlAs superlattices and related materials

    International Nuclear Information System (INIS)

    Arutyunov, N.Y.; Sekkal, N.

    2008-08-01

    The band structure calculations based on the method proposed by Jaros et al. (Phys. Rev. B 31, 1205 (1985)) have been performed for the defect-free GaAs-AlAs superlattice and related AlAs and GaAs single crystals; the electron-positron momentum density distributions have been computed and analyzed. The results of calculations are in good agreement with the experimental data obtained ad hoc for GaAs and AlAs bulk materials by measuring the angular correlation of the annihilation radiation (ACAR). Small (but marked) features of the electron-positron momentum density of the valence band have been revealed both for constituent materials and GaAs-AlAs superlattice. The delocalization of positron in 'perfect' defect-'free' AlAs and GaAs single crystals to be observed experimentally is borne out by the results of pseudo-potential band calculations performed on the basis of method proposed by Sekkal et al. (Superlattices and Microstructures, 33, 63 (2003)). The prediction of the possibility of a certain confinement of positron in the interstitial area of GaAs- AlAs superlattice is confirmed by the agreement between the results of calculations and relevant experimental data obtained for GaAs and AlAs single crystals. No considerable effect of the enhancement of the annihilation rate (due to electron-positron interaction) upon the electron-positron momentum density distribution both in the superlattice and its constituent bulk materials has been found. The results of ACAR measurements and calculations performed suggest that a tangible improvement of the sensitivity of existing positron annihilation techniques is necessary for studying details of the electron-positron momentum density distributions in defect-'free' superlattices to be created on the basis of the diamond-like semiconductors possessing close values of the electron momentum densities. On the contrary, the positron-sensitive vacancy-type defects of various types in the superlattice may become a source of the

  3. Photoacoustic transformation of Bessel light beams in magnetoactive superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Mityurich, G. S., E-mail: George-mityurich@mail.ru [Belarusian Trade and Economics University of Consumer Cooperatives (Belarus); Chernenok, E. V.; Sviridova, V. V.; Serdyukov, A. N. [Gomel State University (Belarus)

    2015-03-15

    Photoacoustic transformation of the TE mode of a Bessel light beam (BLB) has been studied for piezoelectric detection in short-period superlattices formed by magnetoactive crystals of bismuth germanate (Bi{sub 12}GeO{sub 20}) and bismuth silicate (Bi{sub 12}SiO{sub 20}) types. It is shown that the resulting signal amplitude can be controlled using optical schemes of BLB formation with a tunable cone angle. A resonant increase in the signal amplitude has been found in the megahertz range of modulation frequencies and its dependences on the BLB modulation frequency, geometric sizes of the two-layer structure and piezoelectric transducer, radial coordinate of the polarization BLB mode, and dissipative superlattice parameters are analyzed.

  4. Manganites in Perovskite Superlattices: Structural and Electronic Properties

    KAUST Repository

    Jilili, Jiwuer

    2016-07-13

    Perovskite oxides have the general chemical formula ABO3, where A is a rare-earth or alkali-metal cation and B is a transition metal cation. Perovskite oxides can be formed with a variety of constituent elements and exhibit a wide range of properties ranging from insulators, metals to even superconductors. With the development of growth and characterization techniques, more information on their physical and chemical properties has been revealed, which diversified their technological applications. Perovskite manganites are widely investigated compounds due to the discovery of the colossal magnetoresistance effect in 1994. They have a broad range of structural, electronic, magnetic properties and potential device applications in sensors and spintronics. There is not only the technological importance but also the need to understand the fundamental mechanisms of the unusual magnetic and transport properties that drive enormous attention. Manganites combined with other perovskite oxides are gaining interest due to novel properties especially at the interface, such as interfacial ferromagnetism, exchange bias, interfacial conductivity. Doped manganites exhibit diverse electrical properties as compared to the parent compounds. For instance, hole doped La0.7Sr0.3MnO3 is a ferromagnetic metal, whereas LaMnO3 is an antiferromagnetic insulator. Since manganites are strongly correlated systems, heterojunctions composed of manganites and other perovskite oxides are sunject to complex coupling of the spin, orbit, charge, and lattice degrees of freedom and exhibit unique electronic, magnetic, and transport properties. Electronic reconstructions, O defects, doping, intersite disorder, magnetic proximity, magnetic exchange, and polar catastrophe are some effects to explain these interfacial phenomena. In our work we use first-principles calculations to study the structural, electronic, and magnetic properties of manganite based superlattices. Firstly, we investigate the electronic

  5. Investigation of InAs/GaSb-based superlattices by diffraction methods

    Energy Technology Data Exchange (ETDEWEB)

    Ashuach, Y.; Kauffmann, Y.; Lakin, E. [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Zolotoyabko, E., E-mail: zloto@tx.technion.ac.i [Department of Materials Engineering, Technion-Israel Institute of Technology, Haifa 32000 (Israel); Grossman, S.; Klin, O.; Weiss, E. [SCD, SemiConductor Devices, P. O. Box 2250, Haifa 31021 (Israel)

    2010-02-15

    We use high-resolution X-ray diffraction and high-resolution transmission electron microscopy in order to study the strain state, atomic intermixing and layer thicknesses in the MBE-grown GaSb/InSb/InAs/InSb superlattices. Simple and fast metrology procedure is developed, which allows us to obtain the most important technological parameters, such as the thicknesses of the GaSb, InAs and ultra-thin InSb sub-layers, the superlattice period and the fraction of atomic substitutions in the InSb sub-layers.

  6. Enhancement of dielectric and ferroelectric properties of PbZrO3/PbTiO3 artificial superlattices

    International Nuclear Information System (INIS)

    Choi, Taekjib; Lee, Jaichan

    2005-01-01

    PbZrO 3 (PZO)/PbTiO 3 (PTO) artificial superlattices have been grown on La 0.5 Sr 0.5 CoO 3 (LSCO) (100)/MgO (100) substrate by pulsed laser deposition with various stacking periods from 1 to 100 unit cells. The PZO/PTO artificial lattice exhibited a diffraction pattern characteristic of a superlattice structure, i.e., a main diffraction peak with satellite peaks. The electrical properties of the superlattices were investigated as a function of the stacking period. The dielectric constant and remnant polarization improved on decreasing the stacking periodicity. The dielectric constant of the superlattice reached 800 at a stacking period of 1unit cell/1unit cell (PZO 1 /PTO 1 ), which is larger than that of the single PZT solid-solution film. Moreover, the remnant polarization reached a maximum, 2Pr = 38.7 μC/cm 2 , at a 2-unit-cell stacking period. Progressive enhancement of dielectric constant and remnant polarization in artificial PZO/PTO superlattice was accompanied by expansion of the (100)-plane spacing on decreasing the stacking periodicity. These results suggest that the lattice strain developed in the PZO/PTO superlattice may have influence on dielectric constant and ferroelectric behavior.

  7. Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier

    Science.gov (United States)

    Shi, Yan-hui; Zhang, Yong-gang; Ma, Ying-jie; Gu, Yi; Chen, Xing-you; Gong, Qian; Du, Ben; Zhang, Jian; Zhu, Yi

    2018-03-01

    The performance of wavelength extended In0.83Ga0.17As/InP photodetectors has been improved notably through modifying the position of electron barriers in absorption layer. In order to fully utilize the diffusion component of the photocurrent, the In0.66Ga0.34As/InAs superlattice electron barrier is moved to the edge of the depletion region. Enhanced peak photo responsivity up to 0.84 A/W is realized, which raises 24% compared to that of a reference detector with the superlattice barrier in the middle of the absorber. The dark current slightly increases by 25% at room temperature while decreases by more than an order of magnitude at 150 K, resulting in about 10% or more than twofold improvements for the detectivity, respectively. The results suggest that optimized barrier position is a necessity for barrier-type photodetectors to achieve better performances.

  8. Quantum dynamical phenomena of independent electrons in semiconductor superlattices subject to a uniform electric field

    International Nuclear Information System (INIS)

    Bouchard, A.M.

    1994-01-01

    This report discusses the following topics: Bloch oscillations and other dynamical phenomena of electrons in semiconductor superlattices; solvable dynamical model of an electron in a one-dimensional aperiodic lattice subject to a uniform electric field; and quantum dynamical phenomena of electrons in aperiodic semiconductor superlattices

  9. Numerical simulation of the modulation transfer function (MTF) in infrared focal plane arrays: simulation methodology and MTF optimization

    Science.gov (United States)

    Schuster, J.

    2018-02-01

    Military requirements demand both single and dual-color infrared (IR) imaging systems with both high resolution and sharp contrast. To quantify the performance of these imaging systems, a key measure of performance, the modulation transfer function (MTF), describes how well an optical system reproduces an objects contrast in the image plane at different spatial frequencies. At the center of an IR imaging system is the focal plane array (FPA). IR FPAs are hybrid structures consisting of a semiconductor detector pixel array, typically fabricated from HgCdTe, InGaAs or III-V superlattice materials, hybridized with heat/pressure to a silicon read-out integrated circuit (ROIC) with indium bumps on each pixel providing the mechanical and electrical connection. Due to the growing sophistication of the pixel arrays in these FPAs, sophisticated modeling techniques are required to predict, understand, and benchmark the pixel array MTF that contributes to the total imaging system MTF. To model the pixel array MTF, computationally exhaustive 2D and 3D numerical simulation approaches are required to correctly account for complex architectures and effects such as lateral diffusion from the pixel corners. It is paramount to accurately model the lateral di_usion (pixel crosstalk) as it can become the dominant mechanism limiting the detector MTF if not properly mitigated. Once the detector MTF has been simulated, it is directly decomposed into its constituent contributions to reveal exactly what is limiting the total detector MTF, providing a path for optimization. An overview of the MTF will be given and the simulation approach will be discussed in detail, along with how different simulation parameters effect the MTF calculation. Finally, MTF optimization strategies (crosstalk mitigation) will be discussed.

  10. Strain-tunable half-metallicity in hybrid graphene-hBN monolayer superlattices

    International Nuclear Information System (INIS)

    Meng, Fanchao; Zhang, Shiqi; Lee, In-Ho; Jun, Sukky; Ciobanu, Cristian V.

    2016-01-01

    Highlights: • Armchair superlattices have a bandgap modulated by the deformed domain widths. • Strain and domain width lead to novel spin-dependent behavior for zigzag boundaries. • Limits for spin-dependent bandgap and half-metallic behavior have been charted. - Abstract: As research in 2-D materials evolves toward combinations of different materials, interesting electronic and spintronic properties are revealed and may be exploited in future devices. A way to combine materials is the formation of spatially periodic domain boundaries in an atom-thick monolayer: as shown in recent reports, when these domains are made of graphene and hexagonal boron nitride, the resulting superlattice has half-metallic properties in which one spin component is (semi)metallic and the other is semiconductor. We explore here the range of spin-dependent electronic properties that such superlattices can develop for different type of domain boundaries, domain widths, and values of tensile strain applied to the monolayer. We show evidence of an interplay between strain and domain width in determining the electronic properties: while for armchair boundaries the bandgap is the same for both spin components, superlattices with zigzag boundaries exhibit rich spin-dependent behavior, including different bandgaps for each spin component, half-metallicity, and reversal of half-metallicity. These findings can lead to new ways of controlling the spintronic properties in hybrid-domain monolayers, which may be exploited in devices based on 2-D materials.

  11. Hybrid inorganic–organic superlattice structures with atomic layer deposition/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Yamauchi, Hisao; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi [Department of Chemistry, Aalto University, FI-00076 Aalto (Finland)

    2014-01-15

    A combination of the atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques is successfully employed to fabricate thin films incorporating superlattice structures that consist of single layers of organic molecules between thicker layers of ZnO. Diethyl zinc and water are used as precursors for the deposition of ZnO by ALD, while three different organic precursors are investigated for the MLD part: hydroquinone, 4-aminophenol and 4,4′-oxydianiline. The successful superlattice formation with all the organic precursors is verified through x-ray reflectivity studies. The effects of the interspersed organic layers/superlattice structure on the electrical and thermoelectric properties of ZnO are investigated through resistivity and Seebeck coefficient measurements at room temperature. The results suggest an increase in carrier concentration for small concentrations of organic layers, while higher concentrations seem to lead to rather large reductions in carrier concentration.

  12. Two-dimensional thermoelectric Seebeck coefficient of SrTiO3-based superlattices

    International Nuclear Information System (INIS)

    Ohta, Hiromichi

    2008-01-01

    This review provides the origin of the unusually large thermoelectric Seebeck coefficient vertical stroke S vertical stroke of a two-dimensional electron gas confined within a unit cell layer thickness (∝0.4 nm) of a SrTi 0.8 Nb 0.2 O 3 layer of artificial superlattices of SrTiO 3 /SrTi 0.8 Nb 0.2 O 3 [H. Ohta et al., Nature Mater. 6, 129 (2007)]. The vertical stroke S vertical stroke 2D values of the[(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) y ] 20 superlattice increase proportional to y -0.5 , and reach 290 μV K -1 (y=1) at room temperature, which is ∝5 times larger than that of the SrTi 0.8 Nb 0.2 O 3 bulk (vertical stroke S vertical stroke 3D =61 μVK -1 ), proving that the density of states in the ground state for SrTiO 3 increases in inverse proportion to y. The critical barrier thickness for quantum electron confinement is also clarified to be 6.25 nm (16 unit cells of SrTiO 3 ). Significant structural changes are not observed in the superlattice after annealing at 900 K in a vacuum. The value of vertical stroke S vertical stroke 2D of the superlattice gradually increases with temperature and reaches 450 μVK -1 at 900 K, which is ∝3 times larger than that of bulk SrTi 0.8 Nb 0.2 O 3 . These observations provide clear evidence that the [(SrTiO 3 ) 17 /(SrTi 0.8 Nb 0.2 O 3 ) 1 ] 20 superlattice is stable and exhibits a giant vertical stroke S vertical stroke even at high temperature. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. ) m /SrVO3 ( m = 5, 6) Superlattices

    KAUST Repository

    Dai, Qingqing

    2018-05-04

    The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states for both superlattices are found due to epitaxial strain. At the interfaces, however, the V spins couple antiferromagnetically for m = 5 and ferromagnetically for m = 6 (m‐dependence of the magnetization). Electronic reconstruction in form of charge ordering is predicted to occur with V3+ and V4+ states arranged in a checkerboard pattern on both sides of the SrO layer. As compared to bulk LaVO3, the presence of V4+ ions introduces in‐gap states that strongly reduce the bandgap and influence the orbital occupation and ordering.

  14. Interface-Induced Nucleation, Orientational Alignment and Symmetry Transformations in Nanocube Superlattices

    KAUST Repository

    Choi, Joshua J.

    2012-09-12

    The self-assembly of colloidal nanocrystals into ordered superstructures depends critically on the shape of the nanocrystal building blocks. We investigated the self-assembly of cubic PbSe nanocrystals from colloidal suspensions in real-time using in situ synchrotron-based X-ray scattering. We combined small-angle and wide-angle scattering to investigate the translational ordering of nanocrystals and their orientational ordering in the lattice sites, respectively. We found that cubic PbSe nanocrystals assembled into a face-up (i.e., 〈100〉 normal to the interface) configuration at the liquid/substrate interface whereas nanocubes at the liquid/air interface assume a corner-up (i.e., 〈111〉 normal to the interface) configuration. The latter nanocrystal superlattice displays polymorphism as a function inter-NC separation distance. We explain the observed superlattice structure polymorphs in terms of the interactions directing the self-assembly. Insights into the directed self-assembly of superlattices gained from this study have important implication on the future development of nanocrystals as building blocks in artificial solids. © 2012 American Chemical Society.

  15. Infrared and THz spectroscopy of nanostructured dielectrics

    Directory of Open Access Journals (Sweden)

    Jan Petzelt

    2009-09-01

    Full Text Available Results achieved using the infrared/THz spectroscopy of various inhomogeneous dielectrics in the Department of Dielectrics, Institute of Physics, Prague, during the last decade are briefly reviewed. The discussion concerns high-permittivity ceramics with inevitable low-permittivity dead layers along the grain boundaries, relaxor ferroelectrics with highly anisotropic polar nano-regions, classical matrix-type composites, core-shell composites, filled nanoporous glasses, polycrystalline and epitaxial thin films, heterostructures and superlattices on dielectric substrates. The analysis using models based on the effective medium approach is discussed. The importance of depolarizing field and of the percolation of components on the effective ac dielectric response and the excitations contributing to it are emphasized.

  16. Kinetic Monte Carlo simulation of phase-precipitation versus instability behavior in short period FeCr superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Rodríguez-Martínez, F.J. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castejón-Mochón, J.F., E-mail: jfcastejon@ucam.edu [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Castrillo, P.; Berenguer-Vidal, R. [UCAM, Universidad Católica de Murcia, Campus de los Jerónimos, 30107 Guadalupe (Murcia) (Spain); Dopico, I.; Martin-Bragado, I. [IMDEA Materials Institute, Eric Kandel 2, 28906 Getafe (Madrid) (Spain)

    2017-02-15

    The structural evolution of FeCr superlattices has been studied using a quasi-atomistic Object Kinetic Monte Carlo model. Superlattices with different spatial periods have been simulated for anneal durations from few hours to several months at 500 °C. Relatively-long period superlattices stabilize into Fe-rich and Cr-rich layers with compositions close to those of bulk α and α′ phases. In contrast, superlattices with very short periods (4, 5, 6 nm) are observed to undergo instability and, for long annealing times, evolve into three-dimensionally decomposed regions, in qualitative agreement to recent experimental observations. The instability onset is delayed as the spatial period increases, and it occurs via interface roughness. This evolution can be explained as a minimization of the free-energy associated to the α/α′ interfaces. A comprehensive description of the evolution dynamics of FeCr-based structures is obtained with our model.

  17. Ab initio study of thermoelectric properties of doped SnO{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Borges, P.D., E-mail: pdborges@gmail.com [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Silva, D.E.S.; Castro, N.S.; Ferreira, C.R.; Pinto, F.G.; Tronto, J. [Instituto de Ciências Exatas e Tecnológicas, Universidade Federal de Viçosa, 38810-000 Rio Paranaíba, MG (Brazil); Scolfaro, L. [Department of Physics, Texas State University, 78666 San Marcos, TX (United States)

    2015-11-15

    Transparent conductive oxides, such as tin dioxide (SnO{sub 2}), have recently shown to be promising materials for thermoelectric applications. In this work we studied the thermoelectric properties of Fe-, Sb- and Zn-uniformly doping and co-doping SnO{sub 2}, as well as of Sb and Zn planar (or delta)-doped layers in SnO{sub 2} forming oxide superlattices (SLs). Based on the semiclassical Boltzmann transport equations (BTE) in conjunction with ab initio electronic structure calculations, the Seebeck coefficient (S) and figure of merit (ZT) are obtained for these systems, and are compared with available experimental data. The delta doping approach introduces a remarkable modification in the electronic structure of tin dioxide, when compared with the uniform doping, and colossal values for ZT are predicted for the delta-doped oxide SLs. This result is a consequence of the two-dimensional electronic confinement and the strong anisotropy introduced by the doped planes. In comparison with the uniformly doped systems, our predictions reveal a promising use of delta-doped SnO{sub 2} SLs for enhanced S and ZT, which emerge as potential candidates for thermoelectric applications. - Graphical abstract: Band structure and Figure of merit for SnO2:Sb superlattice along Z direction, P. D. Borges, D. E. S. Silva, N. S. Castro, C. R. Ferreira, F. G. Pinto, J. Tronto and L. Scolfaro, Ab initio study of thermoelectric properties of doped SnO2 superlattices. - Highlights: • Thermoelectric properties of SnO{sub 2}-based alloys and superlattices. • High figure of merit is predicted for planar-doped SnO{sub 2} superlattices. • Nanotechnology has an important role for the development of thermoelectric devices.

  18. Analysis of periodically patterned metallic nanostructures for infrared absorber

    Science.gov (United States)

    Peng, Sha; Yuan, Ying; Long, Huabao; Liu, Runhan; Wei, Dong; Zhang, Xinyu; Wang, Haiwei; Xie, Changsheng

    2018-02-01

    With rapid advancement of infrared detecting technology in both military and civil domains, the photo-electronic performances of near-infrared detectors have been widely concerned. Currently, near-infrared detectors demonstrate some problems such as low sensitivity, low detectivity, and relatively small array scale. The current studies show that surface plasmons (SPs) stimulated over the surface of metallic nanostructures by incident light can be used to break the diffraction limit and thus concentrate light into sub-wavelength scale, so as to indicate a method to develop a new type of infrared absorber or detector with very large array. In this paper, we present the design and characterization of periodically patterned metallic nanostructures that combine nanometer thickness aluminum film with silicon wafer. Numerical computations show that there are some valleys caused by surface plasmons in the reflection spectrum in the infrared region, and both red shift and blue shift of the reflection spectrum were observed through changing the nanostructural parameters such as angle α and diameters D. Moreover, the strong E-field intensity is located at the sharp corner of the nano-structures.

  19. Thermoelectric efficiency of IV-VI multiple quantumwell and superlattice systems

    International Nuclear Information System (INIS)

    Beyer, H.

    2001-09-01

    In this thesis the thermoelectric properties of PbTe-based multiple quantum well (MQW) and superlattice (SL) structures grown by molecular beam epitaxy (MBE) are investigated. The two approaches for an enhancement of the dimensionless thermoelectric figure of merit ZT = σS 2 T/λ (σ: electric conductivity, S: Seebeck coefficient, λ: thermal conductivity, T: temperature) in low dimensional structures are discussed: an enhancement of the two dimensional (2D) power factor σS 2 2D due to carrier confinement or a reduction of the thermal conductivity due to a modified phonon dispersion and stronger phonon scattering in layered structures. The novel PbTe/Pb 1-x Sr x Te-MQW system is investigated for a rise of the 2D power factor σS 2 2D . A detailed analysis of optical and electronic parameters based on infrared transmission spectra is performed. Only a small rise of the 2D power factor σS 2 2D for the MQW's compared to homogeneous epitaxial PbTe-layers is found. This smaller σS 2 2D -rise compared to first predictions for ideal MQW's is related to the finite barrier height and effects like lifting of the valley degeneracy or enhanced carrier scattering. However, a strong reduction of the thermal conductivity is found in MQW structures resulting in 2D ZT values between 0.5 and 1.0 at T = 300 K and up to 1.6 at T = 550 K. For the use in technical applications the three dimensional (3D) figure of merit of the whole structure ZT 3D must be raised. Different novel PbTe-based superlattice structures are investigated with respect to a 3D ZT-increase due to thermal conductivity reduction. ZT 3D -values of 0.33 for p-type PbTe-doping superlattices and of 0.45 at T = 300 K for PbTe/PbSe 20 Te 80 -SL's are determined (T = 300 K; n-PbTe: ZT max = 0.36, p-PbTe: ZT max = 0.30). Maximum ZT-values up to 1.25 for PbTe/PbSe 20 Te 80 -SL's and 1.20 for PbTe-doping SL's are estimated for temperatures between 450 K and 550 K. These values show the potential of these structures for

  20. Tunable Noncollinear Antiferromagnetic Resistive Memory through Oxide Superlattice Design

    Science.gov (United States)

    Hoffman, Jason D.; Wu, Stephen M.; Kirby, Brian J.; Bhattacharya, Anand

    2018-04-01

    Antiferromagnets (AFMs) have recently gathered a large amount of attention as a potential replacement for ferromagnets (FMs) in spintronic devices due to their lack of stray magnetic fields, invisibility to external magnetic probes, and faster magnetization dynamics. Their development into a practical technology, however, has been hampered by the small number of materials where the antiferromagnetic state can be both controlled and read out. We show that by relaxing the strict criterion on pure antiferromagnetism, we can engineer an alternative class of magnetic materials that overcome these limitations. This is accomplished by stabilizing a noncollinear magnetic phase in LaNiO3 /La2 /3Sr1 /3MnO3 superlattices. This state can be continuously tuned between AFM and FM coupling through varying the superlattice spacing, strain, applied magnetic field, or temperature. By using this alternative "knob" to tune magnetic ordering, we take a nanoscale materials-by-design approach to engineering ferromagneticlike controllability into antiferromagnetic synthetic magnetic structures. This approach can be used to trade-off between the favorable and unfavorable properties of FMs and AFMs when designing realistic resistive antiferromagnetic memories. We demonstrate a memory device in one such superlattice, where the magnetic state of the noncollinear antiferromagnet is reversibly switched between different orientations using a small magnetic field and read out in real time with anisotropic magnetoresistance measurements.

  1. Lateral surface superlattices in strained InGaAs layers

    International Nuclear Information System (INIS)

    Milton, B.

    2000-08-01

    Lateral Surface Superlattices were fabricated by etching in strained InGaAs layers above a GaAs/AlGaAs 2DEG channel. These were etched both by dry plasma wet chemical etching to produce periods of 100nm, 200nm and 300nm. These superlattices were fabricated on Hall bars to allow four terminal measurement and a blanket gate was placed on top, to allow variations in the carrier concentration. The magnetoresistance effects of these superlattices were studied at varying values of gate voltage, which varies the carrier concentration and the electrostatic periodic potential and at temperatures down to 45mK in a dilution refrigerator. From the oscillations observed in the magnetoresistance trace's it is possible to calculate the magnitude of the periodic potential. This showed that the etched, strained InGaAs was producing an anisotropic piezoelectric potential, along with an isotropic electrostatic potential. The variation in period allowed a study of the change of this piezoelectric potential with the period as well as a study of the interactions between the electrostatic and piezoelectric potentials. Further, at the lowest temperatures a strong interaction was observed between the Commensurability Oscillations, caused by the periodic potential, and the Shubnikov-de Haas Oscillations due to the Landau. Levels. This interaction was studied as it varied with temperature and carrier concentration. (author)

  2. Novel Heterongineered Detectors for Multi-Color Infrared Sensing

    Science.gov (United States)

    2012-01-30

    a) Sequential but collocated two-color detection capabilities of type II InAsGaSb SLS detector based on an nBn design and (b) Simultaneous and...captions: Figure 1. Heterostructure Schematic of (a) PbIbN Design, (b) Dual Color Detector Design with flat band energy lineups . Figure 2. (a) Spectral

  3. Design of band pass filter in a modulated magnetic graphene superlattice

    International Nuclear Information System (INIS)

    Lu, Wei-Tao; Li, Wen

    2015-01-01

    Electronic transport of graphene through a modulated magnetic superlattice where the barrier heights present Gaussian profile is studied. It is found that the incident electron could be completely transmitted in the miniband regions and be completely reflected in the bandgap regions. The results suggest an application of the structure as an effectively band pass filter, which can be controlled by the structural parameters. It is concluded that the positions of miniband and bandgap are robust to the Gaussian variation of barrier heights. The effect of this modulated magnetic superlattice is also available for the conventional electrons described by Schrödinger equation

  4. Surface magnetic phase transitions in Dy/Lu superlattices

    International Nuclear Information System (INIS)

    Goff, J.P.; Sarthour, R.S.; Micheletti, C.; Langridge, S.; Wilkins, C.J.T.; Ward, R.C.C.; Wells, M.R.

    1999-01-01

    Dy/Lu superlattices comprising ferromagnetic Dy blocks coupled antiferromagnetically across the Lu blocks may be modelled as a chain of XY spins with antiferromagnetic exchange and six-fold anisotropy. We have calculated the stable magnetic phases for the cases of large anisotropy and a field applied along an easy direction. For an infinite chain an intermediate phase (1, 5,...) is predicted, where the notation gives the angle between the moment and the applied field in units of π/3. Furthermore, the effects of surface reconstruction are determined for finite chains. A [Dy 20 Lu 12 ] 20 superlattice has been studied using bulk magnetization and polarized neutron reflectivity. The (1, 5,...) phase has been identified and the results provide direct evidence in support of the theoretical predictions. Dipolar forces are shown to account for the magnitude of the observed exchange coupling. (Copyright (c) 1999 Elsevier Science B.V., Amsterdam. All rights reserved.)

  5. Simple theoretical analysis of the photoemission from quantum confined effective mass superlattices of optoelectronic materials

    Directory of Open Access Journals (Sweden)

    Debashis De

    2011-07-01

    Full Text Available The photoemission from quantum wires and dots of effective mass superlattices of optoelectronic materials was investigated on the basis of newly formulated electron energy spectra, in the presence of external light waves, which controls the transport properties of ultra-small electronic devices under intense radiation. The effect of magnetic quantization on the photoemission from the aforementioned superlattices, together with quantum well superlattices under magnetic quantization, has also been investigated in this regard. It appears, taking HgTe/Hg1−xCdxTe and InxGa1−xAs/InP effective mass superlattices, that the photoemission from these quantized structures is enhanced with increasing photon energy in quantized steps and shows oscillatory dependences with the increasing carrier concentration. In addition, the photoemission decreases with increasing light intensity and wavelength as well as with increasing thickness exhibiting oscillatory spikes. The strong dependence of the photoemission on the light intensity reflects the direct signature of light waves on the carrier energy spectra. The content of this paper finds six different applications in the fields of low dimensional systems in general.

  6. Performance enhancement in p-channel charge-trapping flash memory devices with Si/Ge super-lattice channel and band-to-band tunneling induced hot-electron injection

    International Nuclear Information System (INIS)

    Liu, Li-Jung; Chang-Liao, Kuei-Shu; Jian, Yi-Chuen; Wang, Tien-Ko; Tsai, Ming-Jinn

    2013-01-01

    P-channel charge-trapping flash memory devices with Si, SiGe, and Si/Ge super-lattice channel are investigated in this work. A Si/Ge super-lattice structure with extremely low roughness and good crystal structure is obtained by precisely controlling the epitaxy thickness of Ge layer. Both programming and erasing (P/E) speeds are significantly improved by employing this Si/Ge super-lattice channel. Moreover, satisfactory retention and excellent endurance characteristics up to 10 6 P/E cycles with 3.8 V memory window show that the degradation on reliability properties is negligible when super-lattice channel is introduced. - Highlights: ► A super-lattice structure is proposed to introduce more Ge content into channel. ► Super-lattice structure possesses low roughness and good crystal structure. ► P-channel flash devices with Si, SiGe, and super-lattice channel are investigated. ► Programming/erasing speeds are significantly improved. ► Reliability properties can be kept for device with super-lattice channel

  7. Measurement of infrared optical constants with visible photons

    Science.gov (United States)

    Paterova, Anna; Yang, Hongzhi; An, Chengwu; Kalashnikov, Dmitry; Krivitsky, Leonid

    2018-04-01

    We demonstrate a new scheme for infrared spectroscopy with visible light sources and detectors. The technique relies on the nonlinear interference of correlated photons, produced via spontaneous parametric down conversion in a nonlinear crystal. Visible and infrared photons are split into two paths and the infrared photons interact with the sample under study. The photons are reflected back to the crystal, resembling a conventional Michelson interferometer. Interference of the visible photons is observed and it is dependent on the phases of all three interacting photons: pump, visible and infrared. The transmission coefficient and the refractive index of the sample in the infrared range can be inferred from the interference pattern of visible photons. The method does not require the use of potentially expensive and inefficient infrared detectors and sources, it can be applied to a broad variety of samples, and it does not require a priori knowledge of sample properties in the visible range.

  8. Strain-Mediated Inverse Photoresistivity in SrRuO3/La0.7Sr0.3MnO3Superlattices

    KAUST Repository

    Liu, Heng-Jui

    2015-12-09

    © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. In the pursuit of novel functionalities by utilizing the lattice degree of freedom in complex oxide heterostructure, the control mechanism through direct strain manipulation across the interfaces is still under development, especially with various stimuli, such as electric field, magnetic field, light, etc. In this study, the superlattices consisting of colossal-magnetoresistive manganites La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO) have been designed to investigate the light-dependent controllability of lattice order in the corresponding functionalities and rich interface physics. Two substrates, SrTiO3 (STO) and LaAlO3 (LAO), have been employed to provide the different strain environments to the superlattice system, in which the LSMO sublayers exhibit different orbital occupations. Subsequently, by introducing light, we can modulate the strain state and orbital preference of LSMO sublayers through light-induced expansion of SRO sublayers, leading to surprisingly opposite changes in photoresistivity. The observed photoresistivity decreases in the superlattice grown on STO substrate while increases in the superlattice grown on LAO substrate under light illumination. This work has presented a model system that demonstrates the manipulation of orbital-lattice coupling and the resultant functionalities in artificial oxide superlattices via light stimulus. A fascinating model system of optic-driven functionalities has been achieved by artificial superlattices consisting of manganite La0.7Sr0.3MnO3 (LSMO) and photostrictive SrRuO3 (SRO). With design of different initial strain and orbital states in superlattices, we can even control the photoresistivity of the superlattices in an opposite trend that cannot be achieved in pure single film.

  9. Effect of anisotropy on the magnon energy gap in a two-layer ferromagnetic superlattice

    International Nuclear Information System (INIS)

    Qiu Rongke; Liang Jing; Li Qingfeng; Zhang Zhidong; Song Panpan; Hong Xiaomin

    2009-01-01

    The magnon energy bands or spectra in a two-layer ferromagnetic superlattice are studied. It is found that a modulated energy gap exists in the magnon energy band along K x direction perpendicular to the superlattice plane, which is different from the optical magnon gap at K x =0. The anisotropy, the spin quantum numbers and the interlayer exchange couplings all affect the magnon energy gap. If the anisotropy exists, there will be no acoustic energy branch in the system. There is a competition effect of the anisotropy and the spin quantum number on the magnon energy gap. The competition achieves a balance at the zero energy gap, at which the symmetry of the system is higher. The two energy spectra of the two-layer ferromagnetic superlattice are lowered with increasing temperature.

  10. Theory and simulation of photogeneration and transport in Si-SiOx superlattice absorbers

    Directory of Open Access Journals (Sweden)

    Aeberhard Urs

    2011-01-01

    Full Text Available Abstract Si-SiOx superlattices are among the candidates that have been proposed as high band gap absorber material in all-Si tandem solar cell devices. Owing to the large potential barriers for photoexited charge carriers, transport in these devices is restricted to quantum-confined superlattice states. As a consequence of the finite number of wells and large built-in fields, the electronic spectrum can deviate considerably from the minibands of a regular superlattice. In this article, a quantum-kinetic theory based on the non-equilibrium Green's function formalism for an effective mass Hamiltonian is used for investigating photogeneration and transport in such devices for arbitrary geometry and operating conditions. By including the coupling of electrons to both photons and phonons, the theory is able to provide a microscopic picture of indirect generation, carrier relaxation, and inter-well transport mechanisms beyond the ballistic regime.

  11. Infrared Sky Surveys

    Science.gov (United States)

    Price, Stephan D.

    2009-02-01

    A retrospective is given on infrared sky surveys from Thomas Edison’s proposal in the late 1870s to IRAS, the first sensitive mid- to far-infrared all-sky survey, and the mid-1990s experiments that filled in the IRAS deficiencies. The emerging technology for space-based surveys is highlighted, as is the prominent role the US Defense Department, particularly the Air Force, played in developing and applying detector and cryogenic sensor advances to early mid-infrared probe-rocket and satellite-based surveys. This technology was transitioned to the infrared astronomical community in relatively short order and was essential to the success of IRAS, COBE and ISO. Mention is made of several of the little known early observational programs that were superseded by more successful efforts.

  12. Far infrared photoconductors

    International Nuclear Information System (INIS)

    Leotin, J.; Meny, C.

    1990-01-01

    This paper presents the development of far infrared photoconductors for the focal plane of a spaceborne instrument named SAFIRE. SAFIRE (Spectroscopy of the Atmosphere using Far-Infrared Emission) belongs to the EOS program (Earth Observing System) and is now in the definition phase. It is a joint effort by scientists from the United States, Great Britain, Italy and France for a new generation of atmosphere sensor. The overall goal of the SAFIRE experiment is to improve the understanding of the ozone distribution in the middle atmosphere by conducting global scale measurements of the important chemical, radiative and dynamical processes which influence its changes. This will be accomplished by the measurement of the far infrared thermal limb emission in seven spectral channels covering the range 80 to 400 cm -1 with a maximum resolution of 0.004 cm -1 . For example key gases like OH, O, HO 2 , N 2 O 5 will be probed for the first time. Achievement of the required detector sensitivity in the far-infrared imposes the choice of photoconductive detectors operating at liquid helium temperatures. Germanium doped with gallium is selected for six channels whereas germanium doped with beryllium is suitable for the N 2 O 5 channel. Both photoconductors Ge:Ga and Ge:Be benefit from a well established material technology. A better wavelength coverage of channel 1 is achieved by applying a small uniaxial stress of the order of 0.1 GPa on the Ge:Ga photoconductors. The channel 6B wavelength coverage could be improved by using zinc-doped-germanium (Ge:Zn) or, much better, by using a Blocked Impurity band silicon detector doped with antimony (BIB Si:Sb). The later is developed as an optional basis

  13. ) m /SrVO3 ( m = 5, 6) Superlattices

    KAUST Repository

    Dai, Qingqing; Lü ders, Ulrike; Fré sard, Raymond; Eckern, Ulrich; Schwingenschlö gl, Udo

    2018-01-01

    The (LaV3+O3)m/SrV4+O3 (m = 5, 6) superlattices are investigated by first principles calculations. While bulk LaVO3 is a C‐type antiferromagnetic semiconductor and bulk SrVO3 is a paramagnetic metal, semiconducting A‐type antiferromagnetic states

  14. Free-Standing Bilayered Nanoparticle Superlattice Nanosheets with Asymmetric Ionic Transport Behaviors.

    Science.gov (United States)

    Rao, Siyuan; Si, Kae Jye; Yap, Lim Wei; Xiang, Yan; Cheng, Wenlong

    2015-11-24

    Natural cell membranes can directionally and selectively regulate the ion transport, which is critical for the functioning of living cells. Here, we report on the fabrication of an artificial membrane based on an asymmetric nanoparticle superlattice bilayered nanosheet, which exhibits similar ion transport characteristics. The superlattice nanosheets were fabricated via a drying-mediated self-assembly of polystyrene-capped gold nanoparticles at the liquid-air interface. By adopting a layer-by-layer assembly process, an asymmetric nanomembrane could be obtained consisting of two nanosheets with different nanoparticle size. The resulting nanomembranes exhibit an asymmetric ion transport behavior, and diode-like current-voltage curves were observed. The asymmetric ion transport is attributed to the cone-like nanochannels formed within the membranes, upon which a simulation map was established to illustrate the relationship between the channel structure and the ionic selectivity, in consistency with our experimental results. Our superlattice nanosheet-based design presents a promising strategy for the fabrication of next-generation smart nanomembranes for rationally and selectively regulating the ion transport even at a large ion flux, with potential applications in a wide range of fields, including biosensor devices, energy conversion, biophotonics, and bioelectronics.

  15. Two-color infrared detector

    Science.gov (United States)

    Klem, John F; Kim, Jin K

    2014-05-13

    A two-color detector includes a first absorber layer. The first absorber layer exhibits a first valence band energy characterized by a first valence band energy function. A barrier layer adjoins the first absorber layer at a first interface. The barrier layer exhibits a second valence band energy characterized by a second valence band energy function. The barrier layer also adjoins a second absorber layer at a second interface. The second absorber layer exhibits a third valence band energy characterized by a third valence band energy function. The first and second valence band energy functions are substantially functionally or physically continuous at the first interface and the second and third valence band energy functions are substantially functionally or physically continuous at the second interface.

  16. Quantum ratchets for quantum communication with optical superlattices

    International Nuclear Information System (INIS)

    Romero-Isart, Oriol; Garcia-Ripoll, Juan Jose

    2007-01-01

    We propose to use a quantum ratchet to transport quantum information in a chain of atoms trapped in an optical superlattice. The quantum ratchet is created by a continuous modulation of the optical superlattice which is periodic in time and in space. Though there is zero average force acting on the atoms, we show that indeed the ratchet effect permits atoms on even and odd sites to move along opposite directions. By loading the optical lattice with two-level bosonic atoms, this scheme permits us to perfectly transport a qubit or entangled state imprinted in one or more atoms to any desired position in the lattice. From the quantum computation point of view, the transport is achieved by a smooth concatenation of perfect swap gates. We analyze setups with noninteracting and interacting particles and in the latter case we use the tools of optimal control to design optimal modulations. We also discuss the feasibility of this method in current experiments

  17. Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

    KAUST Repository

    Bian, Kaifu; Choi, Joshua J.; Kaushik, Ananth; Clancy, Paulette; Smilgies, Detlef-M.; Hanrath, Tobias

    2011-01-01

    Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

  18. Shape-Anisotropy Driven Symmetry Transformations in Nanocrystal Superlattice Polymorphs

    KAUST Repository

    Bian, Kaifu

    2011-04-26

    Despite intense research efforts by research groups worldwide, the potential of self-assembled nanocrystal superlattices (NCSLs) has not been realized due to an incomplete understanding of the fundamental molecular interactions governing the self-assembly process. Because NCSLs reside naturally at length-scales between atomic crystals and colloidal assemblies, synthetic control over the properties of constituent nanocrystal (NC) building blocks and their coupling in ordered assemblies is expected to yield a new class of materials with remarkable optical, electronic, and vibrational characteristics. Progress toward the formation of suitable test structures and subsequent development of NCSL-based technologies has been held back by the limited control over superlattice spacing and symmetry. Here we show that NCSL symmetry can be controlled by manipulating molecular interactions between ligands bound to the NC surface and the surrounding solvent. Specifically, we demonstrate solvent vapor-mediated NCSL symmetry transformations that are driven by the orientational ordering of NCs within the lattice. The assembly of various superlattice polymorphs, including face-centered cubic (fcc), body-centered cubic (bcc), and body-centered tetragonal (bct) structures, is studied in real time using in situ grazing incidence small-angle X-ray scattering (GISAXS) under controlled solvent vapor exposure. This approach provides quantitative insights into the molecular level physics that controls solvent-ligand interactions and assembly of NCSLs. Computer simulations based on all-atom molecular dynamics techniques confirm several key insights gained from experiment. © 2011 American Chemical Society.

  19. Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

    International Nuclear Information System (INIS)

    Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

    2009-01-01

    Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

  20. Excitation on breather (bion) in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.

    1999-09-01

    Soliton breather excitation in superlattice has been studied in this paper. It is observed that under certain conditions, the vector potential equation for the electromagnetic wave propagating through the superlattice assumes the sine-Gordon(sG) equation. The solution of which does not give only a soliton but also a soliton breather. The binding energy of the breather is calculated to be E b = 16γ(1 - sin ν), γ = (1 - u 2 /v 0 2 ) -1/2 where u is the velocity of the breather and v 0 is the velocity of the electromagnetic wave in the absence of electrons. As can be seen, when ν → π/2 the binding energy tends to zero, hence, the breather disintegrates into a soliton and antisoliton. It was further observed that the binding energy decreases with an increase in Δ (the half miniband width) for a given value of d (SL period). Similarly it also decreases with increase in d for a given value of Δ. Comparing the breather's rest energy E b to that of soliton E s i.e E b = 2E s sin ν. We noted that the breather's rest energy is less than that required to excite a soliton. (author)

  1. InGaNAs/GaAs multi-quantum wells and superlattices solar cells

    International Nuclear Information System (INIS)

    Courel Piedrahita, Maykel; Rimada Herrera, Julio Cesar; Hernandez Garcia, Luis

    2011-01-01

    A theoretical study of the GaAs/InGaNAs solar cells based on a multi-quantum wells (MQWSC) and superlattices (SLSC) configuration is presented for the first time. The conversion efficiency as a function of wells width and depth is modeled. The photon absorption increases with the well levels incorporation and therefore the photocurrent as well. It is shown that the MQWSC efficiency overcomes the solar cells without wells about 25%. A study of the SLSC viability is also presented. The conditions for resonant tunneling are established by the matrix transfer method for a superlattice with variable quantum wells width. The effective density of states and the absorption coefficients for SL structure are calculated in order to determinate the JV characteristic. The influence of the superlattice or cluster width in the cell efficiency is researched showing a better performance when width and the number of cluster are increased. The SLSC efficiency is compared with the optimum efficiency obtained for the MQWSC showing that it is reached an amazing increment of 27%. (author)

  2. Formation mechanism of dot-line square superlattice pattern in dielectric barrier discharge

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Weibo; Dong, Lifang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com; Wang, Yongjie; Zhang, Xinpu [College of Physics Science and Technology, Hebei University, Baoding 071002 (China); College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China); Pan, Yuyang, E-mail: donglfhbu@163.com, E-mail: pyy1616@163.com [College of Quality and Technical Supervision, Hebei University, Baoding 071002 (China)

    2014-11-15

    We investigate the formation mechanism of the dot-line square superlattice pattern (DLSSP) in dielectric barrier discharge. The spatio-temporal structure studied by using the intensified-charge coupled device camera shows that the DLSSP is an interleaving of three different subpatterns in one half voltage cycle. The dot square lattice discharges first and, then, the two kinds of line square lattices, which form square grid structures discharge twice. When the gas pressure is varied, DLSSP can transform from square superlattice pattern (SSP). The spectral line profile method is used to compare the electron densities, which represent the amounts of surface charges qualitatively. It is found that the amount of surface charges accumulated by the first discharge of DLSSP is less than that of SSP, leading to a bigger discharge area of the following discharge (lines of DLSSP instead of halos of SSP). The spatial distribution of the electric field of the surface charges is simulated to explain the formation of DLSSP. This paper may provide a deeper understanding for the formation mechanism of complex superlattice patterns in DBD.

  3. Transport properties of YBa2Cu3O7/PrBa2Cu3O7 superlattices

    International Nuclear Information System (INIS)

    Jakob, G.; Hahn, T.; Stoelzel, C.; Tome-Rosa, C.; Adrian, H.

    1992-01-01

    We investigated the transport properties of high-quality YBa 2 Cu 3 O 7 /PrBa 2 Cu 3 O 7 superlattices. The exceptional structural order of the superlattices resulted in satellite peaks up to the ninth order in X-ray diffraction diagrams and high Tc values. We find high superconducting critical transport current densities j c even for ultrafine modulated superlattices which proves the existence of nearly continuous YBa 2 Cu 3 O 7 layers. The activation energy U is found to be constant or to have a linear temperatures dependence over a wide temperature range. (orig.)

  4. Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range

    International Nuclear Information System (INIS)

    Pavelyev, D. G.; Vasilev, A. P.; Kozlov, V. A.; Koschurinov, Yu. I.; Obolenskaya, E. S.; Obolensky, S. V.; Ustinov, V. M.

    2016-01-01

    The electron transport in superlattices based on GaAs/AlAs heterostructures with a small number of periods (6 periods) is calculated by the Monte Carlo method. These superlattices are used in terahertz diodes for the frequency stabilization of quantum cascade lasers in the range up to 4.7 THz. The band structure of superlattices with different numbers of AlAs monolayers is considered and their current–voltage characteristics are calculated. The calculated current–voltage characteristics are compared with the experimental data. The possibility of the efficient application of these superlattices in the THz frequency range is established both theoretically and experimentally.

  5. Characterization of GaSb/InAs type II infrared detectors at very long wavelengths: carrier scattering at defect clusters

    Science.gov (United States)

    Kitchin, M. R.; Jaros, M.

    2003-06-01

    We report a systematic study into carrier scattering by isovalent defects within GaSb/InAs superlattices. The heterostructure system which we investigate has attracted recent interest as the active region of a photodetector for very long wavelength infrared (VLWIR) (⩾12 μm) radiation. To achieve our objective, we employed models of the electronic band structure and scattering cross-section. We considered isolated, substitutional defects at each atom site throughout the unit cell in turn and found that the scattering magnitude generally follows the carrier envelope function, being greatest where the overlap of charge with the defect is highest. We scrutinized the contribution of lattice relaxation around defects to the overall scattering, by comparing calculations where this effect was, in turn, included and excluded. We identified some anomalous contributions of relaxation to both qualitative and quantitative features of the cross-section. Physical mechanisms to explain these effects must be arrived at in order to attain satisfactory characterization of these materials, highlighting the need for both microscopic models and further research. Additional modelling of islands of such defects indicated that the cross-section is proportional to the square of the number of constituent atoms, for both carrier types (holes and electrons) and each defect type. This article demonstrates important links between key growth issues and the dynamical properties of these novel semiconductor devices.

  6. Characterization of band structure for transverse acoustic phonons in Fibonacci superlattices by a bandedge formalism

    International Nuclear Information System (INIS)

    Hsueh, W J; Chen, R F; Tang, K Y

    2008-01-01

    We present a divergence-free method to determine the characteristics of band structures and projected band structures of transverse acoustic phonons in Fibonacci superlattices. A set of bandedge equations is formulated to solve the band structures for the phonon instead of using the traditional dispersion relation. Numerical calculations show band structures calculated by the present method for the Fibonacci superlattice without numerical instability, which may occur in traditional methods. Based on the present formalism, the band structure for the acoustic phonons has been characterized by closure points and the projected bandgaps of the forbidden bands. The projected bandgaps are determined by the projected band structure, which is characterized by the cross points of the projected bandedges. We observed that the band structure and projected band structure and their characteristics were quite different for different generation orders and the basic layers for the Fibonacci superlattice. In this study, concise rules to determine these characteristics of the band structure and the projected band structure, including the number and the location of closure points of forbidden bands and those of projected bandgaps, in Fibonacci superlattices with arbitrary generation order and basic layers are proposed.

  7. HgCdTe Avalanche Photodiode Detectors for Airborne and Spaceborne Lidar at Infrared Wavelengths

    Science.gov (United States)

    Sun, Xiaoli; Abshire, James B.; Beck, Jeffrey D.; Mitra, Pradip; Reiff, Kirk; Yang, Guangning

    2017-01-01

    We report results from characterizing the HgCdTe avalanche photodiode (APD) sensorchip assemblies (SCA) developed for lidar at infrared wavelength using the high density vertically integrated photodiodes (HDVIP) technique. These devices demonstrated high quantum efficiency, typically greater than 90 between 0.8 micrometers and the cut-off wavelength, greater than 600 APD gain, near unity excess noise factor, 6-10 MHz electrical bandwidth and less than 0.5 fW/Hz(exp.1/2) noise equivalent power (NEP). The detectors provide linear analog output with a dynamic range of 2-3 orders of magnitude at a fixed APD gain without averaging, and over 5 orders of magnitude by adjusting the APD and preamplifier gain settings. They have been successfully used in airborne CO2 and CH4 integrated path differential absorption (IPDA) lidar as a precursor for space lidar applications.

  8. Hot electrons in superlattices: quantum transport versus Boltzmann equation

    DEFF Research Database (Denmark)

    Wacker, Andreas; Jauho, Antti-Pekka; Rott, S.

    1999-01-01

    A self-consistent solution of the transport equation is presented for semiconductor superlattices within different approaches: (i) a full quantum transport model based on nonequilibrium Green functions, (ii) the semiclassical Boltzmann equation for electrons in a miniband, and (iii) Boltzmann...

  9. Quantum Transport: The Link between Standard Approaches in Superlattices

    DEFF Research Database (Denmark)

    Wacker, Andreas; Jauho, Antti-Pekka

    1998-01-01

    Theories describing electrical transport in semiconductor superlattices can essentially be divided in three disjoint categories: (i) transport in a miniband; (ii) hopping between Wannier-Stark ladders; and (iii) sequential tunneling. We present a quantum transport model, based on nonequilibrium G...

  10. Low background infrared (LBIR) facility

    Data.gov (United States)

    Federal Laboratory Consortium — The Low background infrared (LBIR) facility was originally designed to calibrate user supplied blackbody sources and to characterize low-background IR detectors and...

  11. Depth sensitivity and source-detector separations for near infrared spectroscopy based on the Colin27 brain template.

    Directory of Open Access Journals (Sweden)

    Gary E Strangman

    Full Text Available Understanding the spatial and depth sensitivity of non-invasive near-infrared spectroscopy (NIRS measurements to brain tissue-i.e., near-infrared neuromonitoring (NIN - is essential for designing experiments as well as interpreting research findings. However, a thorough characterization of such sensitivity in realistic head models has remained unavailable. In this study, we conducted 3,555 Monte Carlo (MC simulations to densely cover the scalp of a well-characterized, adult male template brain (Colin27. We sought to evaluate: (i the spatial sensitivity profile of NIRS to brain tissue as a function of source-detector separation, (ii the NIRS sensitivity to brain tissue as a function of depth in this realistic and complex head model, and (iii the effect of NIRS instrument sensitivity on detecting brain activation. We found that increasing the source-detector (SD separation from 20 to 65 mm provides monotonic increases in sensitivity to brain tissue. For every 10 mm increase in SD separation (up to ~45 mm, sensitivity to gray matter increased an additional 4%. Our analyses also demonstrate that sensitivity in depth (S decreases exponentially, with a "rule-of-thumb" formula S=0.75*0.85(depth. Thus, while the depth sensitivity of NIRS is not strictly limited, NIN signals in adult humans are strongly biased towards the outermost 10-15 mm of intracranial space. These general results, along with the detailed quantitation of sensitivity estimates around the head, can provide detailed guidance for interpreting the likely sources of NIRS signals, as well as help NIRS investigators design and plan better NIRS experiments, head probes and instruments.

  12. A flexible infrared sensor for tissue oximetry

    DEFF Research Database (Denmark)

    Petersen, Søren Dahl; Thyssen, Anders; Engholm, Mathias

    2013-01-01

    We present a flexible infrared sensor for use in tissue oximetry with the aim of treating prematurely born infants. The sensor will detect the oxygen saturation in brain tissue through near infrared spectroscopy. The sensor itself consists of several individual silicon photo detectors fully...

  13. Electronic structure of silicon superlattices

    International Nuclear Information System (INIS)

    Krishnamurthy, S.; Moriarty, J.A.

    1984-01-01

    Utilizing a new complex-band-structure technique, the electronic structure of model Si-Si/sub 1-x/Ge/sub x/ and MOS superlattices has been obtained over a wide range of layer thickness d (11 less than or equal to d less than or equal to 110 A). For d greater than or equal to 44 A, it is found that these systems exhibit a direct fundamental band gap. Further calculations of band-edge effective masses and impurity scattering rates suggest the possibility of a band-structure-driven enhancement in electron mobility over bulk silicon

  14. High Temperature Superconductor Resonator Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — High Temperature Superconductor (HTS) infrared detectors were studied for years but never matured sufficiently for infusion into instruments. Several recent...

  15. 3D-Printing of inverted pyramid suspending architecture for pyroelectric infrared detectors with inhibited microphonic effect

    Science.gov (United States)

    Xu, Qing; Zhao, Xiangyong; Li, Xiaobing; Deng, Hao; Yan, Hong; Yang, Linrong; Di, Wenning; Luo, Haosu; Neumann, Norbert

    2016-05-01

    A sensitive chip with ultralow dielectric loss based on Mn doped PMNT (71/29) has been proposed for high-end pyroelectric devices. The dielectric loss at 1 kHz is 0.005%, one order lower than the minimum value reported so far. The detective figure of merit (Fd) is up to 92.6 × 10-5 Pa-1/2 at 1 kHz and 53.5 × 10-5 Pa-1/2 at 10 Hz, respectively. In addition, an inverted pyramid suspending architecture for supporting the sensitive chip has been designed and manufactured by 3D printing technology. The combination of this sensitive chip and the proposed suspending architecture largely enhances the performance of the pyroelectric detectors. The responsivity and specific detectivity are 669,811 V/W and 3.32 × 109 cm Hz1/2/W at 10 Hz, respectively, 1.9 times and 1.5 times higher than those of the highest values in literature. Furthermore, the microphonic effect can be largely inhibited according to the theoretical and experimental analysis. This architecture will have promising applications in high-end and stable pyroelectric infrared detectors.

  16. Characterization Of Graphene-Ferroelectric Superlattice Hybrid Devices

    Science.gov (United States)

    Yusuf, Mohammed; Du, Xu; Dawber, Matthew

    2013-03-01

    Ferroelectric materials possess a spontaneous electrical polarization, which can be controlled by an electric field. A good interface between ferroelectric surface and graphene sheets can introduce a new generation of multifunctional devices, in which the ferroelectric material can be used to control the properties of graphene. In our approach, problems encountered in previous efforts to combine ferroelectric/carbon systems are overcome by the use of artificially layered superlattice materials grown in the form of epitaxial thin films. In these materials the phase transition temperature and dielectric response of the material can be tailored, allowing us to avoid polarization screening by surface absorbates, whilst maintaining an atomically smooth surface and optimal charge doping properties. Using ferroelectric PbTiO3/SrTiO3 superlattices, we have shown ultra-low-voltage operation of graphene field effect devices within +/- 1 V at room temperature. The switching of the graphene field effect transistors is characterized by pronounced resistance hysteresis, suitable for ultra-fast non-volatile electronics. Low temperature characterization confirmed that the coercive field required for the ferroelectric domain switching increases significantly with decreasing temperatures. National Science Foundation (NSF) (grant number 1105202)

  17. Infrared spectroscopy of an epitaxial BaTiO.sub.3./sub./SrTiO.sub.3./sub. superlattice grown on a (110) SmScO.sub.3./sub. substrate

    Czech Academy of Sciences Publication Activity Database

    Železný, Vladimír; Soukiassian, A.; Schlom, D. G.; Xi, X.X.

    2014-01-01

    Roč. 115, č. 18 (2014), "184102-1"-"184102-7" ISSN 0021-8979 R&D Projects: GA ČR(CZ) GAP204/11/1011 Institutional support: RVO:68378271 Keywords : perovskites * superlattices Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.183, year: 2014

  18. Electron drag by solitons in superlattices in an external magnetic field

    International Nuclear Information System (INIS)

    Vyazovskii, M.V.; Syrodoev, G.A.

    1996-01-01

    The soliton-electric effect accompanying the propagation of an electromagnetic soliton along an axis of a superlattice in an external magnetic field directed along the magnetic field of the soliton is studied. It is assumed that the duration γ-1 of the soliton pulse is much shorter than the free flight time of an electron. It is shown that in the absence of a constant magnetic field the drag current varies as sin(αsech2γt) (α is a constant determined by the parameters of the superlattice). In the presence of a constant magnetic field of intensity H0>>Hs, where Hs is the amplitude of the soliton field, the drag current oscillates

  19. Electronic structure and optical properties of (BeTen/(ZnSem superlattices

    Directory of Open Access Journals (Sweden)

    Caid M.

    2016-03-01

    Full Text Available The structural, electronic and optical properties of (BeTen/(ZnSem superlattices have been computationally evaluated for different configurations with m = n and m≠n using the full-potential linear muffin-tin method. The exchange and correlation potentials are treated by the local density approximation (LDA. The ground state properties of (BeTen/(ZnSem binary compounds are determined and compared with the available data. It is found that the superlattice band gaps vary depending on the layers used. The optical constants, including the dielectric function ε(ω, the refractive index n(ω and the refractivity R(ω, are calculated for radiation energies up to 35 eV.

  20. Analysis of polariton dispersion in metal nanocomposite based novel superlattice system

    Science.gov (United States)

    DoniPon, V.; Joseph Wilson, K. S.; Malarkodi, A.

    2018-06-01

    The influence of metal nanoparticles in tuning the polaritonic gap in a novel piezoelectric superlattice is studied. Dielectric function of the metal nanoparticles is analyzed using Kawabata-Kubo effect and Drude's theory. The effective dielectric function of the nanocomposite system is studied using Maxwell Garnett approximation. Nanocomposite based LiTaO3 novel superlattice is formed by arranging the nanocomposite systems in such a way that their orientations are in the opposite direction. Hence there are two additional modes of propagation. The top most modes reflect the metal behavior of the nanoparticles. It is found that these modes of propagation vary with the filling factor. These additional modes of propagations can be exploited in the field of communication.

  1. Photoluminescence and electrical properties of silicon oxide and silicon nitride superlattices containing silicon nanocrystals

    International Nuclear Information System (INIS)

    Shuleiko, D V; Ilin, A S

    2016-01-01

    Photoluminescence and electrical properties of superlattices with thin (1 to 5 nm) alternating silicon-rich silicon oxide or silicon-rich silicon nitride, and silicon oxide or silicon nitride layers containing silicon nanocrystals prepared by plasma-enhanced chemical vapor deposition with subsequent annealing were investigated. The entirely silicon oxide based superlattices demonstrated photoluminescence peak shift due to quantum confinement effect. Electrical measurements showed the hysteresis effect in the vicinity of zero voltage due to structural features of the superlattices from SiOa 93 /Si 3 N 4 and SiN 0 . 8 /Si 3 N 4 layers. The entirely silicon nitride based samples demonstrated resistive switching effect, comprising an abrupt conductivity change at about 5 to 6 V with current-voltage characteristic hysteresis. The samples also demonstrated efficient photoluminescence with maximum at ∼1.4 eV, due to exiton recombination in silicon nanocrystals. (paper)

  2. Transfer matrix theory of monolayer graphene/bilayer graphene heterostructure superlattice

    International Nuclear Information System (INIS)

    Wang, Yu

    2014-01-01

    We have formulated a transfer matrix method to investigate electronic properties of graphene heterostructure consisting of monolayer graphene and bilayer counterpart. By evaluating transmission, conductance, and band dispersion, we show that, irrespective of the different carrier chiralities in monolayer graphene and bilayer graphene, superlattice consisting of biased bilayer graphene barrier and monolayer graphene well can mimic the electronic properties of conventional semiconductor superlattice, displaying the extended subbands in the quantum tunneling regime and producing anisotropic minigaps for the classically allowed transport. Due to the lateral confinement, the lowest mode has shifted away from the charge neutral point of monolayer graphene component, opening a sizeable gap in concerned structure. Following the gate-field and geometry modulation, all electronic states and gaps between them can be externally engineered in an electric-controllable strategy.

  3. Direct observation of two-step crystallization in nanoparticle superlattice formation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jungwon; Zheng, Haimei; Lee, Won Chul; Geissler, Phillip L.; Rabani, Eran; Alivisatos, A. Paul

    2011-10-06

    Direct imaging of nanoparticle solutions by liquid phase transmission electron microscopy has enabled unique in-situ studies of nanoparticle motion and growth. In the present work, we report on real-time formation of two-dimensional nanoparticle arrays in the very low diffusive limit, where nanoparticles are mainly driven by capillary forces and solvent fluctuations. We find that superlattice formation appears to be segregated into multiple regimes. Initially, the solvent front drags the nanoparticles, condensing them into an amorphous agglomerate. Subsequently, the nanoparticle crystallization into an array is driven by local fluctuations. Following the crystallization event, superlattice growth can also occur via the addition of individual nanoparticles drawn from outlying regions by different solvent fronts. The dragging mechanism is consistent with simulations based on a coarse-grained lattice gas model at the same limit.

  4. Effect of retardation on the reflectance properties of the metallic Fibonacci quasi-superlattice

    International Nuclear Information System (INIS)

    Feng Weiguo; Yao Hesheng; Xu Xiang

    1989-12-01

    Based on the hydrodynamic model theory and the transfer matrix method, we have re-examined the reflection properties by taking account of the retardation effect to the system of the metallic Fibonacci quasi-superlattice. For the normal incident S-polarized Soft X-rays and extreme ultraviolet, we find that the self-similar reflecting spectrum will be restrained with the increasing of the retardation, but for the higher frequency region or at the smaller grazing angle, the self similarity will still exist for the lower generation quasi-superlattice. (author). 19 refs, 2 figs, 1 tab

  5. Structural study of multilayered vanadium/nickel superlattices

    International Nuclear Information System (INIS)

    Homma, H.; Lepetre, Y.; Murduck, J.M.; Schuller, I.K.; Majkrzak, C.F.

    1985-07-01

    We have studied the microstructure of V/Ni metallic superlattice, using x-ray and neutron diffraction. We find a sharp and broad rocking curves around the first-order Bragg peak, and attribute them to a columnar structure which gives rise to two modulation structures; one the ordinary layered structure within the columns and the other the averaged modulation structure which produces the sharp rocking peak

  6. Infrared

    Science.gov (United States)

    Vollmer, M.

    2013-11-01

    'Infrared' is a very wide field in physics and the natural sciences which has evolved enormously in recent decades. It all started in 1800 with Friedrich Wilhelm Herschel's discovery of infrared (IR) radiation within the spectrum of the Sun. Thereafter a few important milestones towards widespread use of IR were the quantitative description of the laws of blackbody radiation by Max Planck in 1900; the application of quantum mechanics to understand the rotational-vibrational spectra of molecules starting in the first half of the 20th century; and the revolution in source and detector technologies due to micro-technological breakthroughs towards the end of the 20th century. This has led to much high-quality and sophisticated equipment in terms of detectors, sources and instruments in the IR spectral range, with a multitude of different applications in science and technology. This special issue tries to focus on a few aspects of the astonishing variety of different disciplines, techniques and applications concerning the general topic of infrared radiation. Part of the content is based upon an interdisciplinary international conference on the topic held in 2012 in Bad Honnef, Germany. It is hoped that the information provided here may be useful for teaching the general topic of electromagnetic radiation in the IR spectral range in advanced university courses for postgraduate students. In the most general terms, the infrared spectral range is defined to extend from wavelengths of 780 nm (upper range of the VIS spectral range) up to wavelengths of 1 mm (lower end of the microwave range). Various definitions of near, middle and far infrared or thermal infrared, and lately terahertz frequencies, are used, which all fall in this range. These special definitions often depend on the scientific field of research. Unfortunately, many of these fields seem to have developed independently from neighbouring disciplines, although they deal with very similar topics in respect of the

  7. Experimental investigations of superconductivity in quasi-two-dimensional epitaxial copper oxide superlattices and trilayers

    International Nuclear Information System (INIS)

    Lowndes, D.H.; Norton, D.P.

    1993-01-01

    Epitaxial trilayer and superlattice structures grown by pulsed laser ablation have been used to study the superconducting-to-normal transition of ultrathin (one and two c-axis unit cells) YBa 2 Cu 3 O 7-x layers. The normalized flux-flow resistances for several epitaxial structures containing two-cell-thick YBa 2 Cu 3 O 7-x films collapse onto the ''universal'' curve of the Ginzburg-Landau Coulomb Gas (GLCG) model. Analysis of normalized resistance data for a series of superlattices containing one-cell-thick YBa 2 Cu 3 O 7-x layers also is consistent with the behavior expected for quasi-two-dimensional layers in a highly anisotropic, layered three-dimensional superconductor. Current-voltage measurements for one of the trilayer structures also are consistent with the normalized resistance data, and with the GLCG model. Scanning tunneling microscopy, transmission electron microscopy, and electrical transport studies show that growth-related steps in ultrathin YBa 2 Cu 3 O 7-x layers affect electrical continuity over macroscopic distances, acting as weak links. However , the perturbation of the superconducting order parameter can be minimized by utilizing hole-doped buffer and cap layers, on both sides of the YBa 2 Cu 3 O 7-x layer, in trilayers and superlattices. These results demonstrate the usefulness of epitaxial trilayer and superlattice structures as tools for systematic, fundamental studies of high-temperature superconductivity

  8. Formation mechanism of gas bubble superlattice in UMo metal fuels: Phase-field modeling investigation

    Energy Technology Data Exchange (ETDEWEB)

    Hu, Shenyang, E-mail: shenyang.hu@pnnl.gov; Burkes, Douglas E.; Lavender, Curt A.; Senor, David J.; Setyawan, Wahyu; Xu, Zhijie

    2016-10-15

    Nano-gas bubble superlattices are often observed in irradiated UMo nuclear fuels. However, the formation mechanism of gas bubble superlattices is not well understood. A number of physical processes may affect the gas bubble nucleation and growth; hence, the morphology of gas bubble microstructures including size and spatial distributions. In this work, a phase-field model integrating a first-passage Monte Carlo method to investigate the formation mechanism of gas bubble superlattices was developed. Six physical processes are taken into account in the model: 1) heterogeneous generation of gas atoms, vacancies, and interstitials informed from atomistic simulations; 2) one-dimensional (1-D) migration of interstitials; 3) irradiation-induced dissolution of gas atoms; 4) recombination between vacancies and interstitials; 5) elastic interaction; and 6) heterogeneous nucleation of gas bubbles. We found that the elastic interaction doesn’t cause the gas bubble alignment, and fast 1-D migration of interstitials along 〈110〉 directions in the body-centered cubic U matrix causes the gas bubble alignment along 〈110〉 directions. It implies that 1-D interstitial migration along [110] direction should be the primary mechanism of a fcc gas bubble superlattice which is observed in bcc UMo alloys. Simulations also show that fission rates, saturated gas concentration, and elastic interaction all affect the morphology of gas bubble microstructures.

  9. Miniaturized multi channel infrared optical gas sensor system

    Science.gov (United States)

    Wöllenstein, Jürgen; Eberhardt, Andre; Rademacher, Sven; Schmitt, Katrin

    2011-06-01

    Infrared spectroscopy uses the characteristic absorption of the molecules in the mid infrared and allows the determination of the gases and their concentration. Especially by the absorption at longer wavelengths between 8 μm and 12 μm, the so called "fingerprint" region, the molecules can be measured with highest selectivity. We present an infrared optical filter photometer for the analytical determination of trace gases in the air. The challenge in developing the filter photometer was the construction of a multi-channel system using a novel filter wheel concept - which acts as a chopper too- in order to measure simultaneously four gases: carbon monoxide, carbon dioxide, methane and ammonia. The system consists of a broadband infrared emitter, a long path cell with 1.7m optical path length, a filter wheel and analogue and digital signal processing. Multi channel filter photometers normally need one filter and one detector per target gas. There are small detection units with one, two or more detectors with integrated filters available on the market. One filter is normally used as reference at a wavelength without any cross-sensitivities to possible interfering gases (e.g. at 3.95 μm is an "atmospheric window" - a small spectral band without absorbing gases in the atmosphere). The advantage of a filter-wheel set-up is that a single IR-detector can be used, which reduces the signal drift enormously. Pyroelectric and thermopile detectors are often integrated in these kinds of spectrometers. For both detector types a modulation of the light is required and can be done - without an additional chopper - with the filter wheel.

  10. Efficient spin filtering in a disordered semiconductor superlattice in the presence of Dresselhaus spin-orbit coupling

    International Nuclear Information System (INIS)

    Khayatzadeh Mahani, Mohammad Reza; Faizabadi, Edris

    2008-01-01

    The influence of the Dresselhaus spin-orbit coupling on spin polarization by tunneling through a disordered semiconductor superlattice was investigated. The Dresselhaus spin-orbit coupling causes the spin polarization of the electron due to transmission possibilities difference between spin up and spin down electrons. The electron tunneling through a zinc-blende semiconductor superlattice with InAs and GaAs layers and two variable distance In x Ga (1-x) As impurity layers was studied. One hundred percent spin polarization was obtained by optimizing the distance between two impurity layers and impurity percent in disordered layers in the presence of Dresselhaus spin-orbit coupling. In addition, the electron transmission probability through the mentioned superlattice is too much near to one and an efficient spin filtering was recommended

  11. Fabrication of Ultrasensitive Transition Edge Sensor Bolometric Detectors for HIRMES

    Science.gov (United States)

    Brown, Ari-David; Brekosky, Regis; Franz, David; Hsieh, Wen-Ting; Kutyrev, Alexander; Mikula, Vilem; Miller, Timothy; Moseley, S. Harvey; Oxborrow, Joseph; Rostem, Karwan; hide

    2017-01-01

    The high resolution mid-infrared spectrometer (HIRMES) is a high resolving power (R approx. 100,000) instrument operating in the 25-122 micron spectral range and will fly on board the Stratospheric Observatory for Far-Infrared Astronomy (SOFIA) in 2019. Central ot HIRMES are its two transition edge sensor (TES) bolometric cameras, an 8x16 detector high resolution array and a 64x16 detector low resolution array. Both types of detectors consist of MoAu TES fabricated on leg-isolated Si membranes. Whereas the high resolution detectors, with noise equivalent power (NEP) approx. 2 aW/square root of (Hz), are fabricated on 0.45 micron Si substrates, the low resolution detectors, with NEP approx. 10 aW/square root of (Hz), are fabricated on 1.40 micron Si. Here we discuss the similarities and difference in the fabrication methodologies used to realize the two types of detectors.

  12. Electronic states in tunneling semiconductor superlattices: Technical progress report for the period September 15, 1987-September 14, 1988

    International Nuclear Information System (INIS)

    Ulloa, S.E.

    1988-01-01

    This research project funded by DOE has concentrated in the systematic study of the effects of a gate voltage on the electronic structure of a tunneling superlattice system. The effects of strong magnetic fields and other various parameters on energy levels of tunneling superlattices have been investigated

  13. Morphological Instability in InAs/GaSb Superlattices due to Interfacial Bonds

    International Nuclear Information System (INIS)

    Li, J.H.; Moss, S.C.; Stokes, D.W.; Caha, O.; Bassler, K.E.; Ammu, S.L.; Bai, J.

    2005-01-01

    Synchrotron x-ray diffraction is used to compare the misfit strain and composition in a self-organized nanowire array in an InAs/GaSb superlattice with InSb interfacial bonds to a planar InAs/GaSb superlattice with GaAs interfacial bonds. It is found that the morphological instability that occurs in the nanowire array results from the large misfit strain that the InSb interfacial bonds have in the nanowire array. Based on this result, we propose that tailoring the type of interfacial bonds during the epitaxial growth of III-V semiconductor films provides a novel approach for producing the technologically important morphological instability in anomalously thin layers

  14. Epitaxial (100)-oriented Mo/V superlattice grown on MgO(100) by dcMS and HiPIMS

    International Nuclear Information System (INIS)

    Shayestehaminzadeh, S.; Magnusson, R.L.; Gislason, H.P.; Olafsson, S.

    2013-01-01

    Epitaxial (100)-oriented Mo/V superlattices have been grown by High Power Impulse Magnetron Sputtering (HiPIMS) and dc Magnetron Sputtering (dcMS) on single-crystalline MgO(100) substrates at growth temperatures ranging from 30 °C to 600 °C. Superlattice bilayer period of Mo/V around 12/12 monolayers and 15 repeat periods was studied. This study aims to investigate the effect of the HiPIMS process on reducing the growth temperature of Mo/V superlattices using the high energy ionized Mo, V species in the HiPIMS plasma. In one case, the Mo layer was only grown with the HiPIMS process and V layer grown using the dcMS process while in another both layers were grown with the HiPIMS process. The as-deposited films were characterized by X-ray reflection and diffraction techniques. The dcMS process was found to give superior superlattice growth at high growth temperatures while a mixed Mo HiPIMS and V dcMS process gives better result at lower growth temperatures (300 °C). Room temperature growth reveals that neither the mixed Mo HiPIMS and V dcMS process nor the pure HiPIMS for both materials can produce better result compared to the pure dcMS process, which gives a relatively better result. - Highlights: • Epitaxial (100)-oriented Mo/V superlattices have been grown by HiPIMS and dcMS on MgO(100) for various temperatures. • The study was aimed to investigate the effect of ionized HiPIMS process onlowering the growth temperature. • The dcMS process was found to give superior superlattice growth at high growth temperature. • The mixed Mo HiPIMS and V dcMS process gives best result at lower growth temperatures

  15. Strain distribution and band structure of InAs/GaAs quantum ring superlattice

    Science.gov (United States)

    Mughnetsyan, Vram; Kirakosyan, Albert

    2017-12-01

    The elastic strain distribution and the band structure of InAs/GaAs one-layer quantum ring superlattice with square symmetry has been considered in this work. The Green's function formalism based on the method of inclusions has been implied to calculate the components of the strain tensor, while the combination of Green's function method with the Fourier transformation to momentum space in Pikus-Bir Hamiltonian has been used for obtaining the miniband energy dispersion surfaces via the exact diagonalization procedure. The dependencies of the strain tensor components on spatial coordinates are compared with ones for single quantum ring and are in good agreement with previously obtained results for cylindrical quantum disks. It is shown that strain significantly affects the miniband structure of the superlattice and has contribution to the degeneracy lifting effect due to heavy hole-light hole coupling. The demonstrated method is simple and provides reasonable results for comparatively small Hamiltonian matrix. The obtained results may be useful for further investigation and construction of novel devices based on quantum ring superlattices.

  16. Topological insulator infrared pseudo-bolometer with polarization sensitivity

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Peter Anand

    2017-10-25

    Topological insulators can be utilized in a new type of infrared photodetector that is intrinsically sensitive to the polarization of incident light and static magnetic fields. The detector isolates single topological insulator surfaces and allows light collection and exposure to static magnetic fields. The wavelength range of interest is between 750 nm and about 100 microns. This detector eliminates the need for external polarization selective optics. Polarization sensitive infrared photodetectors are useful for optoelectronics applications, such as light detection in environments with low visibility in the visible wavelength regime.

  17. High Throughput, High Yield Fabrication of High Quantum Efficiency Back-Illuminated Photon Counting, Far UV, UV, and Visible Detector Arrays

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, M. E.; Carver, A. G.; Jones, T. J.; Greer, F.; Hamden, E.; Goodsall, T.

    2013-01-01

    In this paper we discuss the high throughput end-to-end post fabrication processing of high performance delta-doped and superlattice-doped silicon imagers for UV, visible, and NIR applications. As an example, we present our results on far ultraviolet and ultraviolet quantum efficiency (QE) in a photon counting, detector array. We have improved the QE by nearly an order of magnitude over microchannel plates (MCPs) that are the state-of-the-art UV detectors for many NASA space missions as well as defense applications. These achievements are made possible by precision interface band engineering of Molecular Beam Epitaxy (MBE) and Atomic Layer Deposition (ALD).

  18. Localization in superlattices with randomness in layer thickness

    International Nuclear Information System (INIS)

    Yuan Jian; Tsai Chienhua.

    1987-08-01

    The localization length for electrons in superlattices with randomness in layer thickness is studied in both the commensurate and the incommensurate cases. It is demonstrated that disorder limits the electrons to see only structures within the extent of their wave functions and to be hardly effected by any long range correlation. (author). 4 refs, 6 figs

  19. Future device applications of low-dimensional carbon superlattice structures

    Science.gov (United States)

    Bhattacharyya, Somnath

    2005-03-01

    We observe superior transport properties in low-dimensional amorphous carbon (a-C) and superlattice structures fabricated by a number of different techniques. Low temperature conductivity of these materials is explained using argument based on the crossover of dimensionality of weak localization and electron-electron interactions along with a change of sign of the magneto-resistance. These trends are significantly different from many other well characterized ordered or oriented carbon structures, and, show direct evidence of high correlation length, mobility and an effect of the dimensionality in low-dimensional a-C films. We show routes to prepare bespoke features by tuning the phase relaxation time in order to make high-speed devices over large areas. The artificially grown multi-layer superlattice structures of diamond-like amorphous carbon films show high-frequency resonance and quantum conductance suggesting sufficiently high values of phase coherence length in the present disordered a-C system that could lead to fast switching multi-valued logic.

  20. Optical transmission through multi-component generalized Thue-Morse superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Guogang [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Yang Xiangbo, E-mail: xbyang@scnu.edu.c [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China); Li Yuhong; Song Huanhuan [MOE Key Laboratory of Laser Life Science and Institute of Laser Life Science, South China Normal University, Guangzhou 510631 (China)

    2010-09-01

    In this paper, by the three kinds of basic components (BCs) of three-component Thue-Morse (3CTM) sequence we construct a type of interesting optical basic-structural-units (BSUs) and propose multi-component generalized Thue-Morse (mCGTM) model. Based on the conventional electromagnetic wave theory we investigate the optical transmission vertically through the one-dimensional (1D) mCGTM superlattices. It is found that the optical transmission possesses an interesting pseudo-constant characteristic at the central wavelength. mCGTM sequence exhibits a cantor-set structure which results in the system possessing certain kinds of effective component pairs (ECPs), and each kind of ECP brings about certain contribution towards the optical transmission. The cantor-set structure is the reason that mCGTM multilayers exhibit the optical transmission pseudo-constant property. For the pseudo-constant optical transmission of mCGTM superlattices, there would be a potential application in the designing of some complex optical devices.

  1. Evolution of miniature detectors and focal plane arrays for infrared sensors

    Science.gov (United States)

    Watts, Louis A.

    1993-06-01

    Sensors that are sensitive in the infrared spectral region have been under continuous development since the WW2 era. A quest for the military advantage of 'seeing in the dark' has pushed thermal imaging technology toward high spatial and temporal resolution for night vision equipment, fire control, search track, and seeker 'homing' guidance sensing devices. Similarly, scientific applications have pushed spectral resolution for chemical analysis, remote sensing of earth resources, and astronomical exploration applications. As a result of these developments, focal plane arrays (FPA) are now available with sufficient sensitivity for both high spatial and narrow bandwidth spectral resolution imaging over large fields of view. Such devices combined with emerging opto-electronic developments in integrated FPA data processing techniques can yield miniature sensors capable of imaging reflected sunlight in the near IR and emitted thermal energy in the Mid-wave (MWIR) and longwave (LWIR) IR spectral regions. Robotic space sensors equipped with advanced versions of these FPA's will provide high resolution 'pictures' of their surroundings, perform remote analysis of solid, liquid, and gas matter, or selectively look for 'signatures' of specific objects. Evolutionary trends and projections of future low power micro detector FPA developments for day/night operation or use in adverse viewing conditions are presented in the following test.

  2. Comparison of the Cc and R3c space groups for the superlattice phase of Pb(Zr0.52Ti0.48)O3

    International Nuclear Information System (INIS)

    Ranjan, Rajeev; Singh, Akhilesh Kumar; Ragini; Pandey, Dhananjai

    2005-01-01

    Recent controversy about the space group of the low temperature superlattice phase of Pb(Zr 0.52 Ti 0.48 )O 3 is settled. It is shown that the R3c space group for the superlattice phase cannot correctly account for the peak positions of the superlattice reflections present in the neutron diffraction patterns. The correct space group is reconfirmed to be Cc. A comparison of the atomic coordinates of Cc and Cm space groups is also presented to show that in the absence of superlattice reflections, as is the case with x-ray diffraction data, one would land up in the Cm space group. This superlattice phase is found to coexist with another monoclinic phase of the Cm space group

  3. Technique of infrared synchrotron acceleration diagnostics

    International Nuclear Information System (INIS)

    Mal'tsev, A.A.; Mal'tsev, M.A.

    1997-01-01

    Techniques of measuring of current and geometric parameters and evaluating of energy parameters of the ring bunch of relativistic low-energy electrons have been presented. They have been based on using the synchrotron radiation effect in its infrared spectral part. Fast infrared detectors have provided radiation detection in the spectral range Δλ ≅ 0.3-45 μm. The descriptions of some data monitoring and measuring systems developed in JINR for the realization of techniques of the infrared synchrotron acceleration diagnostics have been given. Infrared optics elements specially developed have been used in these systems

  4. Energy band and transport properties in magnetic aperiodic graphene superlattices of Thue-Morse sequence

    Science.gov (United States)

    Yin, Yiheng; Niu, Yanxiong; Zhang, Huiyun; Zhang, Yuping; Liu, Haiyue

    2016-02-01

    Utilizing the transfer matrix method, we develop the electronic band structure and transport properties in Thue-Morse aperiodic graphene superlattices with magnetic barriers. It is found that the normal transmission is blocked and the position of the Dirac point can be shifted along the wavevector axis by changing the height and width ratio of magnetic barriers, which is intrinsic different from electronic field modulated superlattices. In addition, the angular threshold property of the transmission spectra and the oscillatory property of the conductance have been studied.

  5. Charge dynamics in graphene and graphene superlattices under a high-frequency electric field: a semiclassical approach

    International Nuclear Information System (INIS)

    Kryuchkov, S V; Kukhar’, E I; Zav’yalov, D V

    2013-01-01

    The semiclassical theory of the dynamics of the charge carriers in graphene and in graphene superlattices exposed to a high-frequency electric field is developed. The dispersion law of the solid averaged over the period of the high-frequency electric field is found with the Kapitza method. The band gap in graphene is shown to arise under a high-frequency electric field polarized circularly. The effective mass of charge carriers in the center of the Brillouin band of the graphene superlattice is found to change sign under certain values of the amplitude of the high-frequency field. These values are shown to determine the bounds of the regions of the electromagnetic 2π-pulse stability. The dynamics of the π-pulse in a graphene superlattice is studied. (paper)

  6. Hierarchical self-assembly of hexagonal single-crystal nanosheets into 3D layered superlattices with high conductivity

    Science.gov (United States)

    Tao, Yulun; Shen, Yuhua; Yang, Liangbao; Han, Bin; Huang, Fangzhi; Li, Shikuo; Chu, Zhuwang; Xie, Anjian

    2012-05-01

    While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and self-assemble, in a suitable single solution environment. In cyclohexane, 1D amorphous nanofibers transformed to 1D nanorods as building blocks, and then to 2D single-crystal nanosheets with a hexagonal phase, and lastly to 3D ordered layered superlattices with the narrowest polydispersity value (Mw/Mn = 1.47). Remarkably, all the instructions for the hierarchical self-assembly are encoded in the layered shape in other non-polar solvents (hexane, octane) and their conductivity in the π-π stacking direction is improved to about 50 S cm-1, which is even higher than that of the highest previously reported value (16 S cm-1). The method used in this study is greatly expected to be readily scalable to produce superlattices of conductive polymers with high quality and low cost.While the number of man-made nano superstructures realized by self-assembly is growing in recent years, assemblies of conductive polymer nanocrystals, especially for superlattices, are still a significant challenge, not only because of the simplicity of the shape of the nanocrystal building blocks and their interactions, but also because of the poor control over these parameters in the fabrication of more elaborate nanocrystals. Here, we firstly report a facile and general route to a new generation of 3D layered superlattices of polyaniline doped with CSA (PANI-CSA) and show how PANI crystallize and

  7. Development of IR imaging at IRnova

    Science.gov (United States)

    Martijn, Henk; Asplund, Carl; Malm, Hedda; Smuk, Sergiy; Höglund, Linda; Gustafsson, Oscar; Hammar, Mattias; Hellström, Staffan

    2009-05-01

    Historically IRnova has exclusively been a company, focused on manufacturing of QWIP detectors. Nowadays, besides continuous improvements of the performance of QWIP FPAs and development of new formats IRnova is involved in development of QWIP detectors for special applications and has started the development of the next generation infrared detectors, as well. In the light of the development of new formats we validate experimentally theoretical calculations of the response of QWIPs for smaller pixel size. These results allow for the development of high performance megapixel QWIP FPA that exhibit the high uniformity and operability QWIP detectors are known for. QWIP is also being considered for space applications. The requirements on dark current and operating temperature are however much more stringent as compared to the terrestrial applications. We show ways to improve the material quality with as a result a higher detector operating temperature. IRnova is also looking at antimony-based strained superlattice material for the LWIR region together with partners at the IMAGIC centre of excellence. One of the ways to overcome the problem with surface currents is passivating overgrowth. We will report the status and results of overgrowing the detector mesas with AlGa(As)Sb in a MOVPE system. At the same centre of excellence a novel material concept is being developed for LWIR detection. This new material contains a superlattice of vertically aligned and electronically coupled InAs and GaSb quantum dots. Simulations show that it should be possible to have LWIR detection in this material. We will present the current status and report results in this research.

  8. Recent results on heterojunctions and superlattices: transport and optics

    International Nuclear Information System (INIS)

    Voos, M.

    1983-01-01

    Recent experimental results obtained on two-dimensional semiconductor structures, namely heterojunctions and superlattices are presented. This review, which includes both optical and transport experiments, is not exhaustive, but describes briefly some investigations which are thought to be important from the point of view of fundamental physics. (Author) [pt

  9. Chemically Triggered Formation of Two-Dimensional Epitaxial Quantum Dot Superlattices

    NARCIS (Netherlands)

    Walravens, Willem; De Roo, Jonathan; Drijvers, Emile; Ten Brinck, Stephanie; Solano, Eduardo; Dendooven, Jolien; Detavernier, Christophe; Infante, Ivan; Hens, Zeger

    2016-01-01

    Two dimensional superlattices of epitaxially connected quantum dots enable size-quantization effects to be combined with high charge carrier mobilities, an essential prerequisite for highly performing QD devices based on charge transport. Here, we demonstrate that surface active additives known to

  10. Characterization and Analysis of a Multicolor Quantum Well Infrared Photodetector

    National Research Council Canada - National Science Library

    Hanson, Nathan A

    2006-01-01

    ...), mid-wavelength infrared (MWIR), and long-wavelength infrared (LWIR). Through photocurrent spectroscopy and performance analysis, this prototype detector can be classified and prepared for possible future use within the U.S. Armed Forces...

  11. Optical characterization of nanocrystals in silicon rich oxide superlattices and porous silicon

    International Nuclear Information System (INIS)

    Agocs, E.; Petrik, P.; Milita, S.; Vanzetti, L.; Gardelis, S.; Nassiopoulou, A.G.; Pucker, G.; Balboni, R.; Fried, M.

    2011-01-01

    We propose to analyze ellipsometry data by using effective medium approximation (EMA) models. Thanks to EMA, having nanocrystalline reference dielectric functions and generalized critical point (GCP) model the physical parameters of two series of samples containing silicon nanocrystals, i.e. silicon rich oxide (SRO) superlattices and porous silicon layers (PSL), have been determined. The superlattices, consisting of ten SRO/SiO 2 layer pairs, have been prepared using plasma enhanced chemical vapor deposition. The porous silicon layers have been prepared using short monopulses of anodization current in the transition regime between porous silicon formation and electropolishing, in a mixture of hydrofluoric acid and ethanol. The optical modeling of both structures is similar. The effective dielectric function of the layer is calculated by EMA using nanocrystalline components (nc-Si and GCP) in a dielectric matrix (SRO) or voids (PSL). We discuss the two major problems occurring when modeling such structures: (1) the modeling of the vertically non-uniform layer structures (including the interface properties like nanoroughness at the layer boundaries) and (2) the parameterization of the dielectric function of nanocrystals. We used several techniques to reduce the large number of fit parameters of the GCP models. The obtained results are in good agreement with those obtained by X-ray diffraction and electron microscopy. We investigated the correlation of the broadening parameter and characteristic EMA components with the nanocrystal size and the sample preparation conditions, such as the annealing temperatures of the SRO superlattices and the anodization current density of the porous silicon samples. We found that the broadening parameter is a sensitive measure of the nanocrystallinity of the samples, even in cases, where the nanocrystals are too small to be visible for X-ray scattering. Major processes like sintering, phase separation, and intermixing have been

  12. Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

    KAUST Repository

    Kaushik, Ananth P.

    2012-10-29

    The preference of experimentally realistic sized 4-nm facetted nanocrystals (NCs), emulating Pb chalcogenide quantum dots, to spontaneously choose a crystal habit for NC superlattices (Face Centered Cubic (FCC) vs. Body Centered Cubic (BCC)) is investigated using molecular simulation approaches. Molecular dynamics simulations, using united atom force fields, are conducted to simulate systems comprised of cube-octahedral-shaped NCs covered by alkyl ligands, in the absence and presence of experimentally used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice and its preference of symmetry, as we vary the ligand length of the chains, from 9 to 24 CH2 groups, and the choice of solvent. We find that hexane and toluene are "good" solvents for the NCs, which penetrate the ligand corona all the way to the NC surfaces. We determine the free energy difference between FCC and BCC NC superlattice symmetries to determine the system\\'s preference for either geometry, as the ratio of the length of the ligand to the diameter of the NC is varied. We explain these preferences in terms of different mechanisms in play, whose relative strength determines the overall choice of geometry. © 2012 Wiley Periodicals, Inc.

  13. Shot-Noise-Limited Dual-Beam Detector for Atmospheric Trace-Gas Monitoring with Near-Infrared Diode Lasers

    Science.gov (United States)

    Durry, Georges; Pouchet, Ivan; Amarouche, Nadir; Danguy, Théodore; Megie, Gerard

    2000-10-01

    A dual-beam detector is used to measure atmospheric trace species by differential absorption spectroscopy with commercial near-infrared InGaAs laser diodes. It is implemented on the Spectrom tre Diodes Laser Accordables, a balloonborne tunable diode laser spectrometer devoted to the in situ monitoring of CH 4 and H 2 O. The dual-beam detector is made of simple analogical subtractor circuits combined with InGaAs photodiodes. The detection strategy consists in taking the balanced analogical difference between the reference and the sample signals detected at the input and the output of an open optical multipass cell to apply the full dynamic range of the measurements (16 digits) to the weak molecular absorption information. The obtained sensitivity approaches the shot-noise limit. With a 56-m optical cell, the detection limit obtained when the spectra is recorded within 8 ms is 10 4 (expressed in absorbance units). The design and performances of both a simple substractor and an upgraded feedback substractor circuit are discussed with regard to atmospheric in situ CH 4 absorption spectra measured in the 1.653- m region. Mixing ratios are obtained from the absorption spectra by application of a nonlinear least-squares fit to the full molecular line shape in conjunction with in situ P and T measurements.

  14. Semiconductor high-energy radiation scintillation detector

    International Nuclear Information System (INIS)

    Kastalsky, A.; Luryi, S.; Spivak, B.

    2006-01-01

    We propose a new scintillation-type detector in which high-energy radiation generates electron-hole pairs in a direct-gap semiconductor material that subsequently recombine producing infrared light to be registered by a photo-detector. The key issue is how to make the semiconductor essentially transparent to its own infrared light, so that photons generated deep inside the semiconductor could reach its surface without tangible attenuation. We discuss two ways to accomplish this, one based on doping the semiconductor with shallow impurities of one polarity type, preferably donors, the other by heterostructure bandgap engineering. The proposed semiconductor scintillator combines the best properties of currently existing radiation detectors and can be used for both simple radiation monitoring, like a Geiger counter, and for high-resolution spectrography of the high-energy radiation. An important advantage of the proposed detector is its fast response time, about 1 ns, essentially limited only by the recombination time of minority carriers. Notably, the fast response comes without any degradation in brightness. When the scintillator is implemented in a qualified semiconductor material (such as InP or GaAs), the photo-detector and associated circuits can be epitaxially integrated on the scintillator slab and the structure can be stacked-up to achieve virtually any desired absorption capability

  15. Molecular beam epitaxy growth of [CrGe/MnGe/FeGe] superlattices: Toward artificial B20 skyrmion materials with tunable interactions

    Science.gov (United States)

    Ahmed, Adam S.; Esser, Bryan D.; Rowland, James; McComb, David W.; Kawakami, Roland K.

    2017-06-01

    Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(1 1 1) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, X-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic.

  16. Microtextured Silicon Surfaces for Detectors, Sensors & Photovoltaics

    Energy Technology Data Exchange (ETDEWEB)

    Carey, JE; Mazur, E

    2005-05-19

    With support from this award we studied a novel silicon microtexturing process and its application in silicon-based infrared photodetectors. By irradiating the surface of a silicon wafer with intense femtosecond laser pulses in the presence of certain gases or liquids, the originally shiny, flat surface is transformed into a dark array of microstructures. The resulting microtextured surface has near-unity absorption from near-ultraviolet to infrared wavelengths well below the band gap. The high, broad absorption of microtextured silicon could enable the production of silicon-based photodiodes for use as inexpensive, room-temperature multi-spectral photodetectors. Such detectors would find use in numerous applications including environmental sensors, solar energy, and infrared imaging. The goals of this study were to learn about microtextured surfaces and then develop and test prototype silicon detectors for the visible and infrared. We were extremely successful in achieving our goals. During the first two years of this award, we learned a great deal about how microtextured surfaces form and what leads to their remarkable optical properties. We used this knowledge to build prototype detectors with high sensitivity in both the visible and in the near-infrared. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, two orders of magnitude higher than standard silicon photodiodes. For wavelengths below the band gap, we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm, close to the responsivity of InGaAs photodiodes and five orders of magnitude higher than silicon devices in this wavelength region.

  17. Heterojunction Structures for Photon Detector Applications

    Science.gov (United States)

    2014-07-21

    IR: Fourier-transform infrared FTO: Fluorine doped tin oxide G-R: generation-recombination HEIWIP: heterojunction interfacial workfunction internal...SECURITY CLASSIFICATION OF: The work presented here report findings in (1) infrared detectors based on p-GaAs/AlGaAs heterojunctions , (2) J and H...aggregate sensitized heterojunctions for solar cell and photon detection applications, (3) heterojunctions sensitized with quantum dots as low cost

  18. Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

    Science.gov (United States)

    Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

    2012-01-30

    The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

  19. New spintronic superlattices composed of half-metallic compounds with zinc-blende structure

    International Nuclear Information System (INIS)

    Fong, C Y; Qian, M C

    2004-01-01

    The successful growth of zinc-blende half-metallic compounds, namely CrAs and CrSb, in thin film forms offers a new direction to search for novel spintronic materials. By using a well documented first-principles algorithm, the VASP code, we predict the electronic and magnetic properties of superlattices made of these exciting half-metallic materials. Not only are the superlattices constructed with two of the half-metallic compounds (CrAs/MnAs) but also they are modelled to combine with both a III-V (GaAs-MnAs/CrAs/GaAs) and a IV-IV (MnC/SiC) semiconductor. We investigate variable thicknesses for the combinations. For every case, we find the equilibrium lattice constant as well as the lattice constant at which the superlattice exhibits the half-metallic properties. For CrAs/MnAs, the half-metallic properties are presented and the magnetic moments are shown to be the sum of the moments for MnAs and CrAs. The half-metallic properties of GaAs-MnAs/CrAs/GaAs are found to be crucially dependent on the completion of the d-p hybridization. The magnetic properties of MnC/SiC are discussed with respect to the properties of MnC

  20. Stability and electronic structure of superlattices (IIIV)n/(IV2)n

    International Nuclear Information System (INIS)

    Casagrande, D.; Ferraz, A.C.

    1996-01-01

    Theoretical investigations of atomic relaxation and electronic states have been made for ultrathin superlattices (GaP) n /(Ge 2 ) n , (GaP) n /(Si 2 ) n , (In P) n /(Ge 2 ) n and (In P) n /(Si 2 ) n with period n ≤ 3 in growth directions (001) and (110). The calculations were performed within the momentum-space formalism of the self-consistent ab-initio pseudopotential method and the molecular dynamics approach as proposed by Car and Parrinello. The structures were found to be unstable with respect to the phase separation into the constituent bulk materials. The results for the enthalpy show a metastability as increasing the superlattice period n. The density of nonoctet wrong-bonds play an important role to determine the stability of the structures. (author). 13 refs., 2 figs., 3 tabs

  1. Electronic structure of a graphene superlattice with massive Dirac fermions

    International Nuclear Information System (INIS)

    Lima, Jonas R. F.

    2015-01-01

    We study the electronic and transport properties of a graphene-based superlattice theoretically by using an effective Dirac equation. The superlattice consists of a periodic potential applied on a single-layer graphene deposited on a substrate that opens an energy gap of 2Δ in its electronic structure. We find that extra Dirac points appear in the electronic band structure under certain conditions, so it is possible to close the gap between the conduction and valence minibands. We show that the energy gap E g can be tuned in the range 0 ≤ E g  ≤ 2Δ by changing the periodic potential. We analyze the low energy electronic structure around the contact points and find that the effective Fermi velocity in very anisotropic and depends on the energy gap. We show that the extra Dirac points obtained here behave differently compared to previously studied systems

  2. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio; Tahini, Hassan Ali; Singh, Nirpendra; Schwingenschlö gl, Udo

    2017-01-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\text{LaMnO}_3)_{6-x}\\vert(\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  3. Charge driven metal-insulator transitions in LaMnO3|SrTiO3 (111) superlattices

    KAUST Repository

    Cossu, Fabrizio

    2017-08-01

    Interfaces of perovskite oxides, due to the strong interplay between the lattice, charge and spin degrees of freedom, can host various phase transitions, which is particularly interesting if these transitions can be tuned by external fields. Recently, ferromagnetism was found together with a seemingly insulating state in superlattices of manganites and titanates. We therefore study the (111) oriented $(\\\\text{LaMnO}_3)_{6-x}\\\\vert(\\\\text{SrTiO}_3)_{6+x}~(x = -0.5, 0, 0.5)$ superlattices by means of ab initio calculations, predicting a ferromagnetic ground state due to double exchange in all cases. We shed light on the ferromagnetic coupling in the LaMnO3 region and at the interfaces. The insulating states of specific superlattices can be understood on the basis of Jahn-Teller modes and electron/hole doping.

  4. Increasing sensitivity and angle-of-view of mid-wave infrared detectors by integration with dielectric microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Allen, Kenneth W., E-mail: kenneth.allen@gtri.gatech.edu; Astratov, Vasily N., E-mail: astratov@uncc.edu [Department of Physics and Optical Science, Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, North Carolina 28223-0001 (United States); Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio 45433 (United States); UES, Dayton, Ohio 45433 (United States); Abolmaali, Farzaneh [Department of Physics and Optical Science, Center for Optoelectronics and Optical Communications, University of North Carolina at Charlotte, Charlotte, North Carolina 28223-0001 (United States); Duran, Joshua M.; Ariyawansa, Gamini; Limberopoulos, Nicholaos I. [Air Force Research Laboratory, Sensors Directorate, Wright Patterson AFB, Ohio 45433 (United States); Urbas, Augustine M. [Air Force Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Ohio 45433 (United States)

    2016-06-13

    We observed up to 100 times enhancement of sensitivity of mid-wave infrared photodetectors in the 2–5 μm range by using photonic jets produced by sapphire, polystyrene, and soda-lime glass microspheres with diameters in the 90–300 μm range. By finite-difference time-domain (FDTD) method for modeling, we gain insight into the role of the microspheres refractive index, size, and alignment with respect to the detector mesa. A combination of enhanced sensitivity with angle-of-view (AOV) up to 20° is demonstrated for individual photodetectors. It is proposed that integration with microspheres can be scaled up for large focal plane arrays, which should provide maximal light collection efficiencies with wide AOVs, a combination of properties highly attractive for imaging applications.

  5. Radiation detector. [100 A

    Energy Technology Data Exchange (ETDEWEB)

    Baker, P D; Hollands, D V

    1975-12-04

    A radiation detector is described in which the radiation is led to a sensor via a 100 A thick gold film filter, which reduces the infrared components of the irradiation to a greater extent than the ultra-violet component reaching the sensor.

  6. Sodium effect on self-organization of amphiphilic carboxylates: formation of structured micelles and superlattices.

    Science.gov (United States)

    Rosenlehner, Karin; Schade, Boris; Böttcher, Christoph; Jäger, Christof M; Clark, Timothy; Heinemann, Frank W; Hirsch, Andreas

    2010-08-16

    Not only the self-aggregation of dendritic polycarboxylates into structurally persistent micelles, but also that of the micelles themselves into superlattices is controlled by alkali-metal counterions and shows a pronounced sodium effect. Our combined experimental and computational work has revealed the formation of superlattices for the first time. The behavior of a variety of amphiphilic carboxylates and the different effects of the alkali cations Li(+), Na(+), and K(+) have been investigated by conductivity measurements, cryogenic transmission electron microscopy (cryo-TEM), and molecular-dynamics (MD) simulations. Together, these show that sodium salts of the amphiphiles give the most stable micelles, followed by lithium and potassium. Our results suggest that ion multiplets in bridging positions, rather than contact ion pairs, are responsible for the enhanced stability and the formation of hexagonally ordered superlattices with sodium counterions. Potassium ions do not form such ion multiplets and cannot therefore induce aggregation of the micelles. This sodium effect has far-reaching consequences for a large number of biological and technical systems and sheds new light on the origin of specific-ion effects.

  7. Formation of uniform magnetic structures and epitaxial hydride phases in Nd/Pr superlattices

    DEFF Research Database (Denmark)

    Goff, J.P.; Bryn-Jacobsen, C.; McMorrow, D.F.

    1997-01-01

    , and that the stacking sequence is coherent over many bilayer repeats. The neutron measurements show that for the hexagonal sites of the dhcp structure, the Nd magnetic order propagates coherently through the Pr, whereas the order on the cubic sites is either suppressed or confined to single Nd blocks. It is also shown...... that the singlet ground state of Pr is perturbed to produce a local moment on the hexagonal sites, so that in some cases there is a uniform magnetic structure throughout the superlattice. These results cast new light on the theory of magnetic interactions in rare-earth superlattices. Within a few months of growth...

  8. Space-time evolution of Gaussian wave packets through superlattices containing left-handed layers

    Energy Technology Data Exchange (ETDEWEB)

    Pereyra, P; Romero-Serrano, M [Departamento de Ciencias Basicas, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico); Robledo-Martinez, A, E-mail: ppereyra@correo.azc.uam.m, E-mail: a.robledo@mailaps.or [Departamento de EnergIa, Universidad Autonoma Metropolitana-Azcapotzalco, Mexico DF (Mexico)

    2009-05-01

    We study the space-time evolution of Gaussian electromagnetic wave packets moving through (L/R){sup n} superlattices, containing alternating layers of left and right-handed materials. We show that the time spent by the wave packet moving through arbitrary (L/R){sup n} superlattices are well described by the phase time. We show that in the particular case where the thicknesses d{sub L,R} and indices n{sub l,r} of the layers satisfy the condition d{sub L}|n{sub L}| = d{sub R}n{sub R}, the usual band structure becomes a sequence of isolated and equidistant peaks with negative phase times.

  9. Novel mid-infrared imaging system based on single-mode quantum cascade laser illumination and upconversion

    DEFF Research Database (Denmark)

    Tomko, Jan; Junaid, Saher; Tidemand-Lichtenberg, Peter

    2017-01-01

    Compared to the visible or near-infrared (NIR) spectral regions, there is a lack of very high sensitivity detectors in the mid-infrared (MIR) that operate near room temperature. Upconversion of the MIR light to NIR light that is imaged using affordable, fast, and sensitive NIR detectors or camera...

  10. Transport and spin effects in homogeneous magnetic superlattice

    International Nuclear Information System (INIS)

    Cardoso, J.L.; Pereyra, P.; Anzaldo-Meneses, A.

    2000-09-01

    Homogeneous semiconductors under spacially periodic external magnetic fields exhibit spin-band splitting and displacements, more clearly defined than in diluted magnetic semiconductor superlattices. We study the influence of the geometrical parameters and the spin-field interaction on the electronic transport properties. We show that by varying the external magnetic field, one can easily block the transmission of either the spin-up or the spin-down electrons. (author)

  11. Generation of three-mode continuous-variable entanglement by cascaded nonlinear interactions in a quasiperiodic superlattice

    International Nuclear Information System (INIS)

    Yu, Y. B.; Xie, Z. D.; Yu, X. Q.; Li, H. X.; Xu, P.; Yao, H. M.; Zhu, S. N.

    2006-01-01

    The generation of three-mode continuous-variable entanglement in a quasiperiodically optical superlattice is studied theoretically in this paper. This work is based on the previous experiment result in which three-color light generated from a quasiperiodically optical superlattice through a stimulated parametric down-conversion cascaded with a sum-frequency process. The degree of quadrature phase amplitude correlations, a nonclassical characteristic, among the three mode was discussed by a sufficient inseparability criterion for continuous-variable entanglement, which was proposed by van Loock and Furusawa

  12. Critical properties of a ferroelectric superlattice described by a transverse spin-1/2 Ising model

    International Nuclear Information System (INIS)

    Tabyaoui, A; Saber, M; Baerner, K; Ainane, A

    2007-01-01

    The phase transition properties of a ferroelectric superlattice with two alternating layers A and B described by a transverse spin-1/2 Ising model have been investigated using the effective field theory within a probability distribution technique that accounts for the self spin correlation functions. The Curie temperature T c , polarization and susceptibility have been obtained. The effects of the transverse field and the ferroelectric and antiferroelectric interfacial coupling strength between two ferroelectric materials are discussed. They relate to the physical properties of antiferroelectric/ferroelectric superlattices

  13. Synchrotron spectroscopy of confined carriers in CdF{sub 2}-CaF{sub 2} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ivanovskikh, K. V. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Institute of Physics and Technology, Ural Federal University, Ekaterinburg 620002 (Russian Federation); Hughes-Currie, R. B. [Department of Physics and Astronomy, University of Canterbury, PB 4800, Christchurch 8140 (New Zealand); Reid, M. F.; Reeves, R. J. [MacDiarmid Institute for Advanced Materials and Nanotechnology, P.O. Box 600, Wellington 6140 (New Zealand); Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Wells, J.-P. R., E-mail: jon-paul.wells@canterbury.ac.nz [Dodd-Walls Centre for Photonic and Quantum Technologies and Department of Physics and Astronomy, University of Canterbury, PB4800, Christchurch 8140 (New Zealand); Sokolov, N. S. [Ioffe Physical-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

    2016-03-14

    Luminescence spectroscopic and temporal dynamic properties of high energy elementary excitations in CdF{sub 2}-CaF{sub 2} superlattices have been studied utilising excitation with vacuum ultraviolet and X-ray synchrotron radiation while comparing the results with those obtained for CdF{sub 2} and CaF{sub 2} bulk crystals. It is shown that the optical properties of the superlattice structures are determined by exciton emission in the CdF{sub 2} monolayers. The experimental manifestations of exciton confinement phenomena are discussed.

  14. Solvent-driven symmetry of self-assembled nanocrystal superlattices-A computational study

    KAUST Repository

    Kaushik, Ananth P.; Clancy, Paulette

    2012-01-01

    used solvents, toluene and hexane. System sizes in the 400,000-500,000-atom scale followed for nanoseconds are required for this computationally intensive study. The key questions addressed here concern the thermodynamic stability of the superlattice

  15. Interwell and intrawell magnetoexcitons in GaAs/AlGaAs superlattices

    DEFF Research Database (Denmark)

    Timofeev, V. B.; Filin, A. I.; Tartakovskii, A. I.

    1997-01-01

    The formation of spatially indirect (interwell) excitons in superlattices (SLs) with different barrier widths (different tunneling coupling) is experimentally investigated in a strong enough magnetic field with the use of photoluminescence (PL), photoluminescence excitation (PLE), reflectance spec...

  16. Effects of underlying InGaN/GaN superlattice structures on the structural and optical properties of InGaN LEDs

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Chia-Lung, E-mail: cltsai@mail.cgu.edu.tw

    2016-06-15

    This study proposes the use of InGaN/GaN superlattices grown beneath InGaN multiple quantum wells (MQWs) and designed with different well widths to act as an electron emitter layer (EEL). Cross-sectional transmission electron microscopy reveals strong indium segregation in the underlying superlattices with a 5-nm-thick In{sub 0.1}Ga{sub 0.9}N well, thus corrupting the crystalline perfection of the resulting LEDs, and also increasing their leakage current. It was also found that the depth of the localized states increases with the well width of the underlying superlattices. In the proposed LEDs, variation in the biaxial strains of the superlattice EELs with different well widths results in an increase in indium incorporation of InGaN MQWs, thus obtaining a redshifted photoluminescence emission with respect to that of normal LED. Furthermore, the presence of relatively strong carrier localization and the alleviation of electron leakage from the InGaN MQWs results in improved light output performance from the proposed LEDs grown with a narrow In{sub 0.1}Ga{sub 0.9}N well in the underlying superlattices. Although growth in a wide In{sub 0.1}Ga{sub 0.9}N well (~3.5 nm) containing underlying superlattices suffers from poor crystalline quality due to partial strain relaxation, it resulted in improved roll-off behavior in terms of light intensity. This may be due to the improved hot electron cooling capacity mitigating the extent of carrier leakage. - Highlights: • In{sub 0.1}Ga{sub 0.9}N/GaN superlattices are used as an electron emitter layer. • Improved LED performance can be achieved using a narrow In{sub 0.1}Ga{sub 0.9}N well. • A wider well can further reduce carrier leakage despite poor quality is presented.

  17. Superlattice structure of Ce{sup 3+}-doped BaMgF{sub 4} fluoride crystals - x-ray diffraction, electron spin-resonance, and optical investigations

    Energy Technology Data Exchange (ETDEWEB)

    Yamaga, M.; Hattori, K. [Department of Electrical and Electronic Engineering, Faculty of Engineering, Gifu University, Gifu (Japan); Kodama, N. [Department of Materials Science and Engineering, Faculty of Engineering and Resource Science, Akita University, Akita (Japan); Ishizawa, N. [Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama (Japan); Honda, M. [Faculty of Science, Naruto University of Education, Naruto (Japan); Shimamura, K.; Fukuda, T. [Institute for Materials Research, Tohoku University, Sendai (Japan)

    2001-09-14

    The x-ray diffraction patterns for Ce{sup 3+}-doped BaMgF{sub 4} (BMF) crystals suggest the existence of superlattice structure. The superlattice model is consistent with the characterization of the 4f{sup 1} ground state of Ce{sup 3+} as a probe ion using the electron spin-resonance (ESR) technique. The distinct Ce{sup 3+} luminescence spectra with different peak energies and lifetimes also support the superlattice model. Although the detailed superlattice structure could not be analysed using the diffraction spots, a model has been proposed, taking into account the eight Ce{sup 3+} polyhedra with different anion coordinations in the unit cell of the BMF crystal obtained from the ESR experiments. (author)

  18. Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice.

    Science.gov (United States)

    Bonilla, L L; Carretero, M; Segura, A

    2017-12-01

    When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

  19. Two-dimensional collective electron magnetotransport, oscillations, and chaos in a semiconductor superlattice

    Science.gov (United States)

    Bonilla, L. L.; Carretero, M.; Segura, A.

    2017-12-01

    When quantized, traces of classically chaotic single-particle systems include eigenvalue statistics and scars in eigenfuntions. Since 2001, many theoretical and experimental works have argued that classically chaotic single-electron dynamics influences and controls collective electron transport. For transport in semiconductor superlattices under tilted magnetic and electric fields, these theories rely on a reduction to a one-dimensional self-consistent drift model. A two-dimensional theory based on self-consistent Boltzmann transport does not support that single-electron chaos influences collective transport. This theory agrees with existing experimental evidence of current self-oscillations, predicts spontaneous collective chaos via a period doubling scenario, and could be tested unambiguously by measuring the electric potential inside the superlattice under a tilted magnetic field.

  20. Stratigraphy of a diamond epitaxial three-dimensional overgrowth using doping superlattices

    Science.gov (United States)

    Lloret, F.; Fiori, A.; Araujo, D.; Eon, D.; Villar, M. P.; Bustarret, E.

    2016-05-01

    The selective doped overgrowth of 3D mesa patterns and trenches has become an essential fabrication step of advanced monolithic diamond-based power devices. The methodology here proposed combines the overgrowth of plasma-etched cylindrical mesa structures with the sequential growth of doping superlattices. The latter involve thin heavily boron doped epilayers separating thicker undoped epilayers in a periodic fashion. Besides the classical shape analysis under the scanning electron microscope relying on the appearance of facets corresponding to the main crystallographic directions and their evolution toward slow growing facets, the doping superlattices were used as markers in oriented cross-sectional lamellas prepared by focused ion beam and observed by transmission electron microscopy. This stratigraphic approach is shown here to be applicable to overgrown structures where faceting was not detectable. Intermediate growth directions were detected at different times of the growth process and the periodicity of the superlattice allowed to calculate the growth rates and parameters, providing an original insight into the planarization mechanism. Different configurations of the growth front were obtained for different sample orientations, illustrating the anisotropy of the 3D growth. Dislocations were also observed along the lateral growth fronts with two types of Burger vector: b 01 1 ¯ = /1 2 [ 01 1 ¯ ] and b 112 = /1 6 [ 112 ] . Moreover, the clustering of these extended defects in specific regions of the overgrowth prompted a proposal of two different dislocation generation mechanisms.

  1. Crack-tips enriched platinum-copper superlattice nanoflakes as highly efficient anode electrocatalysts for direct methanol fuel cells.

    Science.gov (United States)

    Zheng, Lijun; Yang, Dachi; Chang, Rong; Wang, Chengwen; Zhang, Gaixia; Sun, Shuhui

    2017-07-06

    We have developed "crack-tips" and "superlattice" enriched Pt-Cu nanoflakes (NFs), benefiting from the synergetic effects of "crack-tips" and "superlattice crystals"; the Pt-Cu NFs exhibit 4 times higher mass activity, 6 times higher specific activity and 6 times higher stability than those of the commercial Pt/C catalyst, respectively. Meanwhile, the Pt-Cu NFs show more enhanced CO tolerance than the commercial Pt/C catalyst.

  2. Tunneling time and Hartman effect in a ferromagnetic graphene superlattice

    Directory of Open Access Journals (Sweden)

    Farhad Sattari

    2012-03-01

    Full Text Available Using transfer-matrix and stationary phase methods, we study the tunneling time (group delay time in a ferromagnetic monolayer graphene superlattice. The system we peruse consists of a sequence of rectangular barriers and wells, which can be realized by putting a series of electronic gates on the top of ferromagnetic graphene. The magnetization in the two ferromagnetic layers is aligned parallel. We find out that the tunneling time for normal incident is independent of spin state of electron as well as the barrier height and electron Fermi energy while for the oblique incident angles the tunneling time depends on the spin state of electron and has an oscillatory behavior. Also the effect of barrier width on tunneling time is also investigated and shown that, for normal incident, the Hartman effect disappears in a ferromagnetic graphene superlattice but it appears for oblique incident angles when the x component of the electron wave vector in the barrier is imaginary.

  3. Tunable electronic and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (001) superlattice: For electrochemical applications

    Energy Technology Data Exchange (ETDEWEB)

    Xu, Qiang; Sopiha, Kostiantyn; Sobhan, Mushtaq; Anariba, Franklin; Wu, Ping, E-mail: wuping@sutd.edu.sg [Entropic Interface Group (EIG), Engineering Product Development, Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372 (Singapore); Ong, Khuong Phuong; Zheng, Jian Wei [Institute of High Performance Computing (IHPC), Agency for Science, Technology and Research - A*Star, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632 (Singapore)

    2016-01-04

    Practical strategy in tuning the conductivity and magnetism of SrTiO{sub 3}/BiFeO{sub 3} (STO/BFO) (001) superlattice is investigated using the first-principles method based on density functional theory. Our calculated results show that both the conductivity and magnetism of this superlattice can be tuned via a control of its interface terminations. The STO layers maintain semiconducting, while the BFO layers demonstrate metallic character. Therefore, the conductivity of STO/BFO is controlled by the BFO layers. Furthermore, a magnetic STO/BFO (001) superlattice can be found in n-type TiO{sub 2}/BiO interface but with heavy electron carriers. The thickness of BFO does not change the electronic structure and character of STO/BFO (001) superlattice. This study provides a fundamental understanding of the chemically turned conductivity and magnetism of BFO thin films, which may further advance electrochemical applications like magnetic-field aided chemical gas sensing, solar cells, and photo-catalytic chemical reactions.

  4. Next-generation mid-infrared sources

    Science.gov (United States)

    Jung, D.; Bank, S.; Lee, M. L.; Wasserman, D.

    2017-12-01

    The mid-infrared (mid-IR) is a wavelength range with a variety of technologically vital applications in molecular sensing, security and defense, energy conservation, and potentially in free-space communication. The recent development and rapid commercialization of new coherent mid-infrared sources have spurred significant interest in the development of mid-infrared optical systems for the above applications. However, optical systems designers still do not have the extensive optical infrastructure available to them that exists at shorter wavelengths (for instance, in the visible and near-IR/telecom wavelengths). Even in the field of optoelectronic sources, which has largely driven the growing interest in the mid-infrared, the inherent limitations of state-of-the-art sources and the gaps in spectral coverage offer opportunities for the development of new classes of lasers, light emitting diodes and emitters for a range of potential applications. In this topical review, we will first present an overview of the current state-of-the-art mid-IR sources, in particular thermal emitters, which have long been utilized, and the relatively new quantum- and interband-cascade lasers, as well as the applications served by these sources. Subsequently, we will discuss potential mid-infrared applications and wavelength ranges which are poorly served by the current stable of mid-IR sources, with an emphasis on understanding the fundamental limitations of the current source technology. The bulk of the manuscript will then explore both past and recent developments in mid-infrared source technology, including narrow bandgap quantum well lasers, type-I and type-II quantum dot materials, type-II superlattices, highly mismatched alloys, lead-salts and transition-metal-doped II-VI materials. We will discuss both the advantages and limitations of each of the above material systems, as well as the potential new applications which they might serve. All in all, this topical review does not aim

  5. Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

    Science.gov (United States)

    Hazbun, Ramsey Michael

    Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry

  6. Revisiting the Local Structure in Ge-Sb-Te based Chalcogenide Superlattices

    NARCIS (Netherlands)

    Casarin, Barbara; Caretta, Antonio; Momand, Jamo; Kooi, Bart J.; Verheijen, Marcel A.; Bragaglia, Valeria; Calarco, Raffaella; Chukalina, Marina; Yu, Xiaoming; Robertson, John; Lange, Felix R. L.; Wuttig, Matthias; Redaelli, Andrea; Varesi, Enrico; Parmigiani, Fulvio; Malvestuto, Marco

    2016-01-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

  7. Revisiting the local structure in Ge-Sb-Te based chalcogenide superlattices

    NARCIS (Netherlands)

    Casarin, B.; Caretta, A.; Momand, J.; Kooi, B. J.; Verheijen, M.A.; Bragaglia, V.; Calarco, R.; Chukalina, M.; Yu, X.; Robertson, J.; Lange, F.R.L.; Wuttig, M.; Redaelli, A.; Varesi, E.; Parmigiani, F.; Malvestuto, M.

    2016-01-01

    The technological success of phase-change materials in the field of data storage and functional systems stems from their distinctive electronic and structural peculiarities on the nanoscale. Recently, superlattice structures have been demonstrated to dramatically improve the optical and electrical

  8. Self-adaptive calibration for staring infrared sensors

    Science.gov (United States)

    Kendall, William B.; Stocker, Alan D.

    1993-10-01

    This paper presents a new, self-adaptive technique for the correlation of non-uniformities (fixed-pattern noise) in high-density infrared focal-plane detector arrays. We have developed a new approach to non-uniformity correction in which we use multiple image frames of the scene itself, and take advantage of the aim-point wander caused by jitter, residual tracking errors, or deliberately induced motion. Such wander causes each detector in the array to view multiple scene elements, and each scene element to be viewed by multiple detectors. It is therefore possible to formulate (and solve) a set of simultaneous equations from which correction parameters can be computed for the detectors. We have tested our approach with actual images collected by the ARPA-sponsored MUSIC infrared sensor. For these tests we employed a 60-frame (0.75-second) sequence of terrain images for which an out-of-date calibration was deliberately used. The sensor was aimed at a point on the ground via an operator-assisted tracking system having a maximum aim point wander on the order of ten pixels. With these data, we were able to improve the calibration accuracy by a factor of approximately 100.

  9. An efficient shutter-less non-uniformity correction method for infrared focal plane arrays

    Science.gov (United States)

    Huang, Xiyan; Sui, Xiubao; Zhao, Yao

    2017-02-01

    The non-uniformity response in infrared focal plane array (IRFPA) detectors has a bad effect on images with fixed pattern noise. At present, it is common to use shutter to prevent from radiation of target and to update the parameters of non-uniformity correction in the infrared imaging system. The use of shutter causes "freezing" image. And inevitably, there exists the problems of the instability and reliability of system, power consumption, and concealment of infrared detection. In this paper, we present an efficient shutter-less non-uniformity correction (NUC) method for infrared focal plane arrays. The infrared imaging system can use the data gaining in thermostat to calculate the incident infrared radiation by shell real-timely. And the primary output of detector except the shell radiation can be corrected by the gain coefficient. This method has been tested in real infrared imaging system, reaching high correction level, reducing fixed pattern noise, adapting wide temperature range.

  10. Spin wave relaxation and magnetic properties in [M/Cu] super-lattices; M=Fe, Co and Ni

    International Nuclear Information System (INIS)

    Fahmi, A.; Qachaou, A.

    2009-01-01

    In this work, we study the elementary excitations and magnetic properties of the [M/Cu] super-lattices with: M=Fe, Co and Ni, represented by a Heisenberg ferromagnetic system with N atomic planes. The nearest neighbour (NN), next nearest neighbour (NNN) exchange, dipolar interactions and surface anisotropy effects are taken into account and the Hamiltonian is studied in the framework of the linear spin wave theory. In the presence of the exchange alone, the excitation spectrum E(k) and the magnetization z >/S analytical expressions are obtained using the Green's function formalism. The obtained relaxation time of the magnon populations is nearly the same in the Fe and Co-based super-lattices, while these magnetic excitations would last much longer in the Ni-based super lattice. A numerical study of the surface anisotropy and long-ranged dipolar interaction combined effects are also reported. The exchange integral values deduced from a comparison with experience for the three super-lattices are coherent.

  11. Rutile IrO2/TiO2 superlattices: A hyperconnected analog to the Ruddelsden-Popper structure

    Science.gov (United States)

    Kawasaki, Jason K.; Baek, David; Paik, Hanjong; Nair, Hari P.; Kourkoutis, Lena F.; Schlom, Darrell G.; Shen, Kyle M.

    2018-05-01

    Dimensionality and connectivity among octahedra play important roles in determining the properties, electronic structure, and phase transitions of transition-metal oxides. Here we demonstrate the epitaxial growth of (110)-oriented alternating layers of IrO2 and TiO2, both of which have the rutile structure. These (IrO2)n/(TiO2)2 superlattices consist of IrO6 and TiO6 octahedra tiled in a hyperconnected, edge- and corner-sharing network. Despite the large lattice mismatch between constituent layers (Δ d∥=-2.1 % and Δ c =+6.6 % ), our reactive molecular-beam epitaxy-grown superlattices show high structural quality as determined by x-ray diffraction and sharp interfaces as observed by transmission electron microscopy. The large strain at the interface is accommodated by an ordered interfacial reconstruction. The superlattices show persistent metallicity down to n =3 atomic layers, and angle-resolved photoemission spectroscopy measurements reveal quantized sub-bands with signatures of IrO2-IrO2 interlayer coupling.

  12. Infrared thermography on TFR 600 Tokamak

    International Nuclear Information System (INIS)

    Romain, Roland.

    1980-06-01

    Infrared thermography with a single InSb detector and with a scanning camera has been performed on the TFR fusion device. High power neutral beam injection diagnostic by means of an infrared periscope is showed to be possible. Surface temperature measurements on the limiter during the discharge have been made in order to evaluate the power deposited by the plasma on this part of the inner wall. Various attempts of infrared detection on the high power neutral injector prototype vessel are described, particularly the measurement of the power deposited on one of the extraction grids of the ion source [fr

  13. Anisotropic critical fields in superconducting superlattices

    International Nuclear Information System (INIS)

    Banerjee, I.; Yang, Q.S.; Falco, C.M.; Schuller, I.K.

    1983-01-01

    The temperature and angular dependence of critical fields (H/sub c/) have been studied as a function of layer thickness for superconducting Nb/Cu superlattices. For layer thicknesses between 100 and 300 A, dimensional crossover has been observed in the temperature dependence of H/sub c/. Associated with the crossover we find a change in the angular dependence of H/sub c/ to that given by the effective-mass theory. This is the first time that a relationship has been found between dimensional crossover observed in the temperature dependence and that in the angular dependence of critical fields

  14. Choosing a Motion Detector.

    Science.gov (United States)

    Ballard, David M.

    1990-01-01

    Examines the characteristics of three types of motion detectors: Doppler radar, infrared, and ultrasonic wave, and how they are used on school buses to prevent students from being killed by their own school bus. Other safety devices cited are bus crossing arms and a camera monitor system. (MLF)

  15. Magnetoelectric control of valley and spin in a silicene nanoribbon modulated by the magnetic superlattices

    Energy Technology Data Exchange (ETDEWEB)

    An, Xing-Tao, E-mail: anxt@hku.hk

    2015-03-20

    The control of valley and spin degrees of freedom and the transport properties of electrons in a zigzag silicene nanoribbon modulated by the magnetic superlattices are investigated theoretically. Due to the valley–spin locking effect in silicene, the valley degree of freedom can be controlled by magnetic means. The valley or/and spin selection induced by the exchange field result in the perfect spin–valley filter and tunneling magnetoresistance effect in the double ferromagnetic barriers on the surface of the silicene nanoribbon. It is more interesting that there are valley-resolved minigaps and minibands in the zigzag silicene nanoribbon modulated by the magnetic superlattices which give rise to the periodically modulated spin (or/and valley) polarization and tunneling magnetoresistance. The results obtained may have certain practical significance in applications for future valleytronic and spintronic devices. - Highlights: • The valley can be controlled by a magnetic field in silicene. • The valley-resolved miniband transport is studied in the silicene superlattices. • There are the perfect spin–valley filter and tunneling magnetoresistance effect.

  16. Electrochemical growth of highly oriented organic-inorganic superlattices using solid-supported multilamellar membranes as templates.

    Science.gov (United States)

    Xing, Li-Li; Li, Da-Peng; Hu, Shu-Xin; Jing, Huai-Yu; Fu, Honglan; Mai, Zhen-Hong; Li, Ming

    2006-02-08

    Controllable depositing of relatively thick inorganic sublayers into organic templates to fabricate organic-inorganic superlattices is of great importance. We report a novel approach to fabricating phospholipid/Ni(OH)(2) superlattices by electrochemical deposition of the inorganic component into solid-supported multilamellar templates. The well-ordered and highly oriented multilamellar templates are produced by spreading small drops of lipid solution on silicon surfaces and letting the solvent evaporate slowly. The templates which are used as working electrodes preserve the lamellar structure in the electrolyte solution. The resulting superlattices are highly oriented. The thickness of the nickel hydroxide is controlled by the concentration of nickel ions in the electrolyte bath. The electron density profiles derived from the X-ray diffraction data reveal that the thickness of the nickel hydroxide sublayers increases from 15 to 27 A as the concentration of nickel nitrate increases from 0.005 mol/L to 0.08 mol/L. We expect that the new method can be extended to depositing a variety of inorganic components including metals, oxides, and semiconductors.

  17. Interfacial magnetic coupling in ultrathin all-manganite La0.7Sr0.3MnO3-TbMnO3 superlattices

    KAUST Repository

    Tian, Y. F.

    2014-04-14

    We report the growth and magnetic properties of all-manganite superlattices composed of ultrathin double-exchange ferromagnetic La0.7Sr0.3MnO3 and noncollinear multiferroic TbMnO3 layers. Spontaneous magnetization and hysteresis loops are observed in such superlattices with individual La0.7Sr0.3MnO3 layers as thin as two unit cells, which are accompanied by pronounced exchange bias and enhanced coercivity. Our results indicate substantial interfacial magnetic coupling between spin sublattices in such superlattices, providing a powerful approach towards tailoring the properties of artificial magnetic heterostructures.

  18. Interfacial magnetic coupling in ultrathin all-manganite La0.7Sr0.3MnO3-TbMnO3 superlattices

    KAUST Repository

    Tian, Y. F.; Lebedev, O. I.; Roddatis, V. V.; Lin, W. N.; Ding, J. F.; Hu, S. J.; Yan, S. S.; Wu, Tao

    2014-01-01

    We report the growth and magnetic properties of all-manganite superlattices composed of ultrathin double-exchange ferromagnetic La0.7Sr0.3MnO3 and noncollinear multiferroic TbMnO3 layers. Spontaneous magnetization and hysteresis loops are observed in such superlattices with individual La0.7Sr0.3MnO3 layers as thin as two unit cells, which are accompanied by pronounced exchange bias and enhanced coercivity. Our results indicate substantial interfacial magnetic coupling between spin sublattices in such superlattices, providing a powerful approach towards tailoring the properties of artificial magnetic heterostructures.

  19. Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

    2013-07-01

    Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

  20. Capacitance-Voltage (CV) Measurement of Type-2 Superlattice Photodiodes

    Science.gov (United States)

    2016-01-05

    Department of Defense position, policy, or decision. CQD Contents 1. Background and Motivation ...1. Background and Motivation 1.1. Development of Type-II superalttice Type-II InAs/GaSb superlattices (T2SLs) were first proposed by Sai-Halasz et...equals the ionized impurity concentration. In such case, the semiconductor is under extrinsic regime, and the dynamic of mobile carriers depends on

  1. Electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices

    Science.gov (United States)

    Hung, Chen-Jen

    This dissertation presents an investigation of the electrocrystallization and scanning probe microscopy of ceramic thin films and superlattices. All of the films were deposited from aqueous solution at room temperature with no subsequent heat treatment needed to effect crystallization. Thallium(III) oxide defect chemistry superlattices were electrodeposited by pulsing the applied overpotential during deposition. The defect chemistry of the oxide is dependent on the applied overpotential. High overpotentials favor oxygen vacancies, while low overpotentials favor cation interstitials. Nanometer-scale holes were formed in thin thallium(III) oxide films using the scanning tunneling microscope in humid ambient conditions. Both cathodic and anodic etching reactions were performed on this metal oxide surface. The hole formation was attributed to localized electrochemical etching reactions beneath the STM tip. The scanning tunneling microscope (STM) was also used to both induce local surface modifications and image cleaved Pb-Tl-O superlattices. A trench of 100 nm in width, 32 nm in depth, and over 1 μm in length was formed after sweeping a bias voltage of ±2.5 V for 1 minute using a fixed STM tip. It has been suggested that STM results obtained under ambient conditions must be evaluated with great care because of the possibility of localized electrochemcial reactions. A novel synthesis method for the production of Cu(II) oxide from an alkaline solution containing Cu(II) tartrate was developed. Rietveld refinement of the cupric oxide films reveals pure Cu(II) oxide with no Cu(I) oxide present in the film.

  2. Soliton excitation in superlattice

    International Nuclear Information System (INIS)

    Mensah, S.Y.; Allotey, F.K.A.; Mensah, N.G.; Twum, A.K.

    1995-10-01

    Excitation of soliton in superlattice has been investigated theoretically. It is noted that the soliton velocity u and the length L depend on the amplitude E 0 and that an increase in the amplitude causes soliton width L to approach zero and the velocity u to that of light V in homogeneous medium. The characteristic parameters of soliton u, L and E 0 are related by expression u/L E 0 = ed/2(h/2π) which is constant depending only on the SL period d. It is observed also that the soliton has both energy E = 8V 2 (1 - u 2 /V 2 ) -1/2 and momentum P = u/V 2 E which makes it behave as relativistic free particle with rest energy 8V 2 . Its interaction with electrons can cause the soliton electric effect in SL. (author). 27 refs

  3. Thermoelectric cross-plane properties on p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Ferre Llin, L.; Samarelli, A. [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); Cecchi, S.; Chrastina, D.; Isella, G. [L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy); Müller Gubler, E. [ETH, Electron Microscopy ETH Zurich, Wolgang-Pauli-Str. Ch-8093 Zurich (Switzerland); Etzelstorfer, T.; Stangl, J. [Johannes Kepler Universität, Institute of Semiconductor and Solid State Physics, A-4040 Linz (Austria); Paul, D.J., E-mail: Douglas.Paul@glasgow.ac.uk [University of Glasgow, School of Engineering, Oakfield Avenue, Glasgow G12 8LT (United Kingdom)

    2016-03-01

    Silicon and germanium materials have demonstrated an increasing attraction for energy harvesting, due to their sustainability and integrability with complementary metal oxide semiconductor and micro-electro-mechanical-system technology. The thermoelectric efficiencies for these materials, however, are very poor at room temperature and so it is necessary to engineer them in order to compete with telluride based materials, which have demonstrated at room temperature the highest performances in literature [1]. Micro-fabricated devices consisting of mesa structures with integrated heaters, thermometers and Ohmic contacts were used to extract the cross-plane values of the Seebeck coefficient and the thermal conductivity from p- and n-Ge/Si{sub x}Ge{sub 1-x} superlattices. A second device consisting in a modified circular transfer line method structure was used to extract the electrical conductivity of the materials. A range of p-Ge/Si{sub 0.5}Ge{sub 0.5} superlattices with different doping levels was investigated in detail to determine the role of the doping density in dictating the thermoelectric properties. A second set of n-Ge/Si{sub 0.3}Ge{sub 0.7} superlattices was fabricated to study the impact that quantum well thickness might have on the two thermoelectric figures of merit, and also to demonstrate a further reduction of the thermal conductivity by scattering phonons at different wavelengths. This technique has demonstrated to lower the thermal conductivity by a 25% by adding different barrier thicknesses per period. - Highlights: • Growth of epitaxial Ge/SiGe superlattices on Si substrates as energy harvesters • Study of cross-plane thermoelectric properties of Ge/SiGe superlattices at 300 K • Thermoelectric figures of merit studied as a function of doping density • Phonon scattering at different wavelengths to reduce thermal transport.

  4. Real-time imaging systems for superconducting nanowire single-photon detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hofherr, Matthias

    2014-07-01

    Superconducting nanowire singe-photon detectors (SNSPD) are promising detectors in the field of applications, where single-photon resolution is required like in quantum optics, spectroscopy or astronomy. These cryogenic detectors gain from a broad spectrum in the optical and infrared range and deliver low dark counts and low jitter. This work provides a piece of deeper physical understanding of detector functionality in combination with highly engineered readout development. A detailed analysis focuses on the intrinsic detection mechanism of SNSPDs related to the detection in the infrared regime and the evolution of dark counts. With this fundamental knowledge, the next step is the development of a multi-pixel readout at cryogenic conditions. It is demonstrated, how two auspicious multi-pixel readout concepts can be realized, which enables statistical framing like in imaging applications using RSFQ electronics with fast framing rates and the readout of a detector array with continuous real-time single-photon resolution.

  5. Emerging technologies for high performance infrared detectors

    OpenAIRE

    Tan Chee Leong; Mohseni Hooman

    2018-01-01

    Infrared photodetectors (IRPDs) have become important devices in various applications such as night vision, military missile tracking, medical imaging, industry defect imaging, environmental sensing, and exoplanet exploration. Mature semiconductor technologies such as mercury cadmium telluride and III–V material-based photodetectors have been dominating the industry. However, in the last few decades, significant funding and research has been focused to improve the performance of IRPDs such as...

  6. Study and realization of a far infrared radiation detector

    International Nuclear Information System (INIS)

    Pereira, Daniel

    1985-01-01

    A F.I.R. dadiation detector (lambda = 337 μm) which makes use of the hot electron photoconductivity in InSb is described. The InSb crystal is cut in a special shape which allows high resistance (-7 KΩ) at liquid helium temperature without a magnetic field. In this way the detector can be used in the optimum point of the noise figure with a ultra-low noise pre-amplifier. A study is done to determine the sensitivity and the NEP (optical and electrical) which results respectively in 70 V/W and 10 -10 WHz sup(-1/2) for optical parameters. (Author) [pt

  7. Infrared studies of impurity states and ultrafast carrier dynamics in semiconductor quantum structures

    Energy Technology Data Exchange (ETDEWEB)

    Stehr, D.

    2007-12-28

    This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2p{sub z} confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 {mu}m and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. By varying the carrier

  8. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Kowarik, S.; Weber, C. [Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin (Germany); Hinderhofer, A.; Gerlach, A.; Schreiber, F. [Universität Tübingen, Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen (Germany); Wang, C.; Hexemer, A. [Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States); Leone, S. R. [Departments of Chemistry and Physics, University of California, and Lawrence Berkeley National Laboratory, Berkeley, CA 94720 (United States)

    2015-11-15

    Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  9. Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

    Directory of Open Access Journals (Sweden)

    S. Kowarik

    2015-11-01

    Full Text Available Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs of the organic semiconductors pentacene (PEN and perfluoro-pentacene (PFP. Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ∼ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findings are important for the development of novel organic quantum optoelectronic devices.

  10. Barriers Keep Drops Of Water Out Of Infrared Gas Sensors

    Science.gov (United States)

    Murray, Sean K.

    1996-01-01

    Infrared-sensor cells used for measuring partial pressures of CO(2) and other breathable gases modified to prevent entry of liquid water into sensory optical paths of cells. Hydrophobic membrane prevents drops of water entrained in flow from entering optical path from lamp to infrared detectors.

  11. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  12. Effects of electron correlations application to Ti atoms on physical properties of (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Aezami, A., E-mail: a.aezami@gmail.com; Abolhassani, M.; Elahi, M.

    2016-05-15

    Magnetic structures and Curie temperatures of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices (SLm–n) with m=1, 2, 3 and n=1, 2, 3, 8 were investigated, using density functional theory implemented in Quantum-Espresso open source code. By applying on-site coulomb interaction (Hubbard term U) to Ti atoms for all of these superlattices, using Stoner–Wolfarth model, it was found that the magnetic order of interfacial atoms of these superlattices changed to ferromagnetic by implying U=5 eV on Ti atoms. The inclusion of electron–electron correlation with U=5 eV on the Ti atoms for all of the superlattices made the two dimensional electron gas (2DEG) formed at the interfaces, half-metallic. The obtained values of Curie temperature, calculated within mean field approximation with U=5 eV on the Ti atoms, are in good agreement with the experimental results. - Highlights: • Calculated the magnetic structure and Curie temperature of the (LaMnO{sub 3}){sub m}/(SrTiO{sub 3}){sub n} superlattices with m=1, 2, 3 and n=1, 2, 3, 8 by mean field approximation. • By implying U=5 eV on the Ti atoms, the magnetic order of interfacial atoms of these superlattices has changed to ferromagnetic. • The 2DEG formed at the interface half-metallic have made in these superlattices by the inclusion of electron-electron correlation with U=5 eV on the Ti atoms for all of the superlattices.

  13. InGaAs detectors and FPA's for a large span of applications: design and material considerations

    Science.gov (United States)

    Vermeiren, J. P.; Merken, P.

    2017-11-01

    Compared with the other Infrared detector materials, such as HgCdTe (or MCT) and lead salts (e.g.: PbS, PbSe, PbSnTe, …), the history of InGaAs FPA's is not that old. Some 25 years ago the first linear detectors were used for space missions [1,2]. During the last 15-20 years InGaAs, grown lattice matched on InP, has become the work horse for the telecommunication industry [3] and later on for passive and active imagery in the SWIR range. For longer wavelengths than 1.7 μm, III-V materials are in strong competition with SWIR MCT and till now the performance of MCT is better than high In-content InGaAs. During the last years some alternatives based on quaternary materials [4] and on Superlattice structures [5] are making gradual progress in such a way that they can yield performing Focal planes in the (near) future. As the SWIR wavelengths range covers a large variety of applications, also the FPA characteristics and mainly the ROIC properties need to be adjusted to fulfil the mission requirements with the requested performance. Additionally one has to bear in mind that the nature of SWIR radiation is completely different from what is usually encountered in IR imaging. Whereas the signal of thermal imagery in the Middle Wavelength (MWIR: [3 - 5 μm]) or Long Wavelength (LWIR: [8 - 10 μm] or [8 - 12 μm]) band is characterized by a large DC pedestal, caused by objects at ambient temperature, and a small AC signal, due to the small temperature or emissivity variations, SWIR range imagery is characterized by a large dynamic range and almost no DC signal. In this sense the SWIR imagery is resembling more the nature of Visible and NIR imaging than that of thermal imagery.

  14. Structure and properties of (Sr, Ca)CuO2-BaCuO2 superlattices grown by pulsed laser interval deposition

    NARCIS (Netherlands)

    Koster, Gertjan; Verbist, Karen; Rijnders, Augustinus J.H.M.; Rogalla, Horst; van Tendeloo, Gustaav; Blank, David H.A.

    2001-01-01

    We report on the preparation of CuBa2(SrxCa1¿x)nCun¿1Oy compounds by fabrication of (Ba,Sr,Ca)CuO2 superlattices with pulsed laser deposition (PLD). A technique called interval deposition is used to suppress multi-level or island growth resulting in high-quality superlattice structures. Both, the

  15. Nanophysics in graphene: neutrino physics in quantum rings and superlattices.

    Science.gov (United States)

    Fertig, H A; Brey, Luis

    2010-12-13

    Electrons in graphene at low energy obey a two-dimensional Dirac equation, closely analogous to that of neutrinos. As a result, quantum mechanical effects when the system is confined or subjected to potentials at the nanoscale may be quite different from what happens in conventional electronic systems. In this article, we review recent progress on two systems where this is indeed the case: quantum rings and graphene electrons in a superlattice potential. In the former case, we demonstrate that the spectrum reveals signatures of 'effective time-reversal symmetry breaking', in which the spectra are most naturally interpreted in terms of effective magnetic flux contained in the ring, even when no real flux is present. A one-dimensional superlattice potential is shown to induce strong band-structure changes, allowing the number of Dirac points at zero energy to be manipulated by the strength and/or period of the potential. The emergence of new Dirac points is shown to be accompanied by strong signatures in the conduction properties of the system.

  16. Optical properties of graphene superlattices.

    Science.gov (United States)

    Le, H Anh; Ho, S Ta; Nguyen, D Chien; Do, V Nam

    2014-10-08

    In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, Ub), where Ub is the potential barrier height. In the higher photon energy range, i.e. Ω > Ub, the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism.

  17. Competing interactions in ferromagnetic/antiferromagnetic perovskite superlattices

    Energy Technology Data Exchange (ETDEWEB)

    Takamura, Y.; Biegalski, M.B.; Christen, H.M.

    2009-10-22

    Soft x-ray magnetic dichroism, magnetization, and magnetotransport measurements demonstrate that the competition between different magnetic interactions (exchange coupling, electronic reconstruction, and long-range interactions) in La{sub 0.7}Sr{sub 0.3}FeO{sub 3}(LSFO)/La{sub 0.7}Sr{sub 0.3}MnO{sub 3}(LSMO) perovskite oxide superlattices leads to unexpected functional properties. The antiferromagnetic order parameter in LSFO and ferromagnetic order parameter in LSMO show a dissimilar dependence on sublayer thickness and temperature, illustrating the high degree of tunability in these artificially layered materials.

  18. High speed infrared radiation thermometer, system, and method

    Science.gov (United States)

    Markham, James R.

    2002-01-01

    The high-speed radiation thermometer has an infrared measurement wavelength band that is matched to the infrared wavelength band of near-blackbody emittance of ceramic components and ceramic thermal barrier coatings used in turbine engines. It is comprised of a long wavelength infrared detector, a signal amplifier, an analog-to-digital converter, an optical system to collect radiation from the target, an optical filter, and an integral reference signal to maintain a calibrated response. A megahertz range electronic data acquisition system is connected to the radiation detector to operate on raw data obtained. Because the thermometer operates optimally at 8 to 12 .mu.m, where emittance is near-blackbody for ceramics, interferences to measurements performed in turbine engines are minimized. The method and apparatus are optimized to enable mapping of surface temperatures on fast moving ceramic elements, and the thermometer can provide microsecond response, with inherent self-diagnostic and calibration-correction features.

  19. Touching points in the energy band structure of bilayer graphene superlattices

    International Nuclear Information System (INIS)

    Pham, C Huy; Nguyen, V Lien

    2014-01-01

    The energy band structure of the bilayer graphene superlattices with zero-averaged periodic δ-function potentials are studied within the four-band continuum model. Using the transfer matrix method, the study is mainly focused on examining the touching points between adjacent minibands. For the zero-energy touching points the dispersion relation derived shows a Dirac-like double-cone shape with the group velocity which is periodic in the potential strength P with the period of π and becomes anisotropic at relatively large P. From the finite-energy touching points we have identified those located at zero wave-number. It was shown that for these finite-energy touching points the dispersion is direction-dependent in the sense that it is linear or parabolic in the direction parallel or perpendicular to the superlattice direction, respectively. We have also calculated the density of states and the conductivity which demonstrates a manifestation of the touching points examined. (paper)

  20. CCST [Center for Compound Semiconductor Technology] research briefs

    International Nuclear Information System (INIS)

    Zipperian, T.E.; Voelker, E.R.

    1989-12-01

    This paper discusses the following topics: theoretical predictions of valence and conduction band offsets in III-V semiconductors; reflectance modulation of a semiconductor superlattice optical mirror; magnetoquantum oscillations of the phonon-drag thermoelectric power in quantum wells; correlation between photoluminescence line shape and device performance of p-channel strained-layer materials; control of threading dislocations in heteroepitaxial structures; improved growth of CdTe on GaAs by patterning; role of structure threading dislocations in relaxation of highly strained single-quantum-well structures; InAlAs growth optimization using reflection mass spectrometry; nonvolatile charge storage in III-V heterostructures; optically triggered thyristor switches; InAsSb strained-layer superlattice infrared detectors with high detectivities; resonant periodic gain surface-emitting semiconductor lasers; performance advantages of strained-quantum-well lasers in AlGaAs/InGaAs; optical integrated circuit for phased-array radar antenna control; and deposition and novel device fabrication from Tl 2 Ca 2 Ba 2 Cu 3 O y thin films

  1. Structure of highly perfect semiconductor strained-layer superlattices

    International Nuclear Information System (INIS)

    Vandenberg, J.M.

    1989-01-01

    High-resolution x-ray diffraction (HRXRD) measurements of strained-layer superlattices (SLS's) have been carried out using a four-crystal monochromator. A wide asymmetric range of sharp higher-order x-ray satellite peaks is observed indicating well-defined periodic structures. Using a kinematical diffraction step model very good agreement between measured and simulated x-ray satellite patterns could be achieved. These results show that this x- ray method is a powerful tool to evaluate the crystal quality of SLS's

  2. Biological infrared microspectroscopy at the National Synchrotron Light Source

    International Nuclear Information System (INIS)

    Miller, Lisa M.; Carr, G. Lawrence; Williams, Gwyn P.; Sullivan, Michael; Chance, Mark R.

    2000-01-01

    Beamline U2B at the National Synchrotron Light Source has been designed and built as an infrared beamline dedicated to the study of biomedical problems. In 1997, the horizontal and vertical acceptances of Beamline U2B were increased in order to increase the overall flux of the beamline. A wedged, CVD diamond window separates the UHV vacuum of the VUV ring from the rough vacuum of the beamline. The endstation consists of a Nicolet Magna 860 step-scan FTIR and a NicPlan infrared microscope. The spectrometer is equipped with beamsplitter/detector combinations that permit data collection in the mid-and far-infrared regions. We have also made provisions for mounting an external detector (e.g. bolometer) for far infrared microspectroscopy. Thus far, Beamline U2B has been used to (1) perform chemical imaging of bone tissue and brain cells to address issues related to bone disease and epilepsy, respectively, and (2) examine time-resolved protein structure in the sub-millisecond folding of cytochrome c

  3. Silicon carbide whiskers with superlattice structure: A precursor for a new type of nanoreactor

    International Nuclear Information System (INIS)

    Lutsenko, Vadym G.

    2008-01-01

    Silicon carbide whiskers exhibit growth predominantly in the direction. The high level of impurities, stacking faults and nanosized twins govern the formation of homojunctions and heterojunctions in crystals. The structure of the whiskers comprises a hybrid superlattice, i.e. contains elements of doped and composite superlattices. An individual SiC whisker can contain hundreds of quantum wells with anomalous chemical properties. This paper shows that it is possible to selectively etch quantum wells and to construct whiskers with quasi-regularly distributed slit-like nanopores (nanoreactors), which are bordered by polar planes {1 1 1}, {0 0 0 1} or a combination of them, and also to produce flat SiC nanocrystals bordered by polar planes

  4. Correlating interfacial octahedral rotations with magnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices.

    Science.gov (United States)

    Zhai, Xiaofang; Cheng, Long; Liu, Yang; Schlepütz, Christian M; Dong, Shuai; Li, Hui; Zhang, Xiaoqiang; Chu, Shengqi; Zheng, Lirong; Zhang, Jing; Zhao, Aidi; Hong, Hawoong; Bhattacharya, Anand; Eckstein, James N; Zeng, Changgan

    2014-07-09

    Lattice distortion due to oxygen octahedral rotations have a significant role in mediating the magnetism in oxides, and recently attracts a lot of interests in the study of complex oxides interface. However, the direct experimental evidence for the interrelation between octahedral rotation and magnetism at interface is scarce. Here we demonstrate that interfacial octahedral rotation are closely linked to the strongly modified ferromagnetism in (LaMnO3+δ)N/(SrTiO3)N superlattices. The maximized ferromagnetic moment in the N=6 superlattice is accompanied by a metastable structure (space group Imcm) featuring minimal octahedral rotations (a(-)a(-)c(-), α~4.2°, γ~0.5°). Quenched ferromagnetism for Nmagnetism. Our study demonstrates that engineering superlattices with controllable interfacial structures can be a feasible new route in realizing functional magnetic materials.

  5. Lead salt resonant cavity enhanced detector with MEMS mirror

    Science.gov (United States)

    Felder, F.; Fill, M.; Rahim, M.; Zogg, H.; Quack, N.; Blunier, S.; Dual, J.

    2010-01-01

    We describe a tunable resonant cavity enhanced detector (RCED) for the mid-infrared employing narrow gap lead-chalcogenide (IV-VI) layers on a Si substrate. The device consists of an epitaxial Bragg reflector layer, a thin p-n+ heterojunction with PbSrTe as detecting layer and a micro-electro-mechanical system (MEMS) micromirror as second mirror. Despite the thin absorber layer the sensitivity is even higher than for a conventional detector. Tunability is achieved by changing the cavity length with a vertically movable MEMS mirror. The device may be used as miniature infrared spectrometer to cover the spectral range from 30 μm.

  6. Bottom-up meets top-down: tailored raspberry-like Fe3O4-Pt nanocrystal superlattices.

    Science.gov (United States)

    Qiu, Fen; Vervuurt, René H J; Verheijen, Marcel A; Zaia, Edmond W; Creel, Erin B; Kim, Youngsang; Urban, Jeffrey J; Bol, Ageeth A

    2018-03-29

    Supported catalysts are widely used in industry and can be optimized by tuning the composition, chemical structure, and interface of the nanoparticle catalyst and oxide support. Here we firstly combine a bottom up colloidal synthesis method with a top down atomic layer deposition (ALD) process to achieve a raspberry-like Pt-decorated Fe3O4 (Fe3O4-Pt) nanoparticle superlattices. This nanocomposite ensures the precision of the catalyst/support interface, improving the catalytic efficiency of the Fe3O4-Pt nanocomposite system. The morphology of the hybrid nanocomposites resulting from different cycles of ALD was monitored by scanning transmission electron microscopy, giving insight into the nucleation and growth mechanism of the ALD process. X-ray photoelectron spectroscopy studies confirm the anticipated electron transfer from Fe3O4 to Pt through the nanocomposite interface. Photocurrent measurement further suggests that Fe3O4 superlattices with controlled decoration of Pt have substantial promise for energy-efficient photoelectrocatalytic oxygen evolution reaction. This work opens a new avenue for designing supported catalyst architectures via precisely controlled decoration of single component superlattices with noble metals.

  7. Anisotropic magnetoresistance and spin polarization of La0.7Sr0.3MnO3/SrTiO3 superlattices

    International Nuclear Information System (INIS)

    Wang, L.M.; Guo, C.-C.

    2005-01-01

    The crystalline structure, anisotropic magnetoresistance (AMR), and magnetization of La 0.7 Sr 0.3 MnO 3 /SrTiO 3 (LSMO/STO) superlattices grown by a rf sputtering system are systematically analyzed to study the spin polarization of manganite at interfaces. The presence of positive low-temperature AMR in LSMO/STO superlattices implies that two bands of majority and minority character contribute to the transport properties, leading to a reduced spin polarization. Furthermore, the magnetization of superlattices follows the T 3/2 law and decays more quickly as the thickness ratio d STO /d LSMO increases, corresponding to a reduced exchange coupling. The results clearly show that the spin polarization is strongly correlated with the influence of interface-induced strain on the structure

  8. Ensuring long-term stability of infrared camera absolute calibration.

    Science.gov (United States)

    Kattnig, Alain; Thetas, Sophie; Primot, Jérôme

    2015-07-13

    Absolute calibration of cryogenic 3-5 µm and 8-10 µm infrared cameras is notoriously instable and thus has to be repeated before actual measurements. Moreover, the signal to noise ratio of the imagery is lowered, decreasing its quality. These performances degradations strongly lessen the suitability of Infrared Imaging. These defaults are often blamed on detectors reaching a different "response state" after each return to cryogenic conditions, while accounting for the detrimental effects of imperfect stray light management. We show here that detectors are not to be blamed and that the culprit can also dwell in proximity electronics. We identify an unexpected source of instability in the initial voltage of the integrating capacity of detectors. Then we show that this parameter can be easily measured and taken into account. This way we demonstrate that a one month old calibration of a 3-5 µm camera has retained its validity.

  9. The Luttinger liquid in superlattice structures: atomic gases, quantum dots and the classical Ising chain

    International Nuclear Information System (INIS)

    Bhattacherjee, Aranya B; Jha, Pradip; Kumar, Tarun; Mohan, Man

    2011-01-01

    We study the physical properties of a Luttinger liquid in a superlattice that is characterized by alternating two tunneling parameters. Using the bosonization approach, we describe the corresponding Hubbard model by the equivalent Tomonaga-Luttinger model. We analyze the spin-charge separation and transport properties of the superlattice system. We suggest that cold Fermi gases trapped in a bichromatic optical lattice and coupled quantum dots offer the opportunity to measure these effects in a convenient manner. We also study the classical Ising chain with two tunneling parameters. We find that the classical two-point correlator decreases as the difference between the two tunneling parameters increases.

  10. Non-linear spin transport in magnetic semiconductor superlattices

    International Nuclear Information System (INIS)

    Bejar, Manuel; Sanchez, David; Platero, Gloria; MacDonald, A.H.

    2004-01-01

    The electronic spin dynamics in DC-biased n-doped II-VI semiconductor multiquantum wells doped with magnetic impurities is presented. Under certain range of electronic doping, conventional semiconductor superlattices present self-sustained oscillations. Magnetically doped wells (Mn) present large spin splittings due to the exchange interaction. The interplay between non-linear interwell transport, the electron-electron interaction and the exchange between electrons and the magnetic impurities produces interesting time-dependent features in the spin polarization current tuned by an external magnetic field

  11. Phase diagrams of a spin-1 Ising superlattice with alternating transverse field

    International Nuclear Information System (INIS)

    Saber, A.; Ez-Zahraouy, H.; Lo Russo, S.; Mattei, G.; Ainane, A.

    2003-01-01

    The effects of alternating transverse fields Ω a and Ω b on the critical behavior of an alternating spin-1 Ising superlattice are studied within an effective field theory with a probability distribution technique that accounts for the single-site spin correlation. Critical temperatures are calculated as a function of the thickness of the superlattice and the strength of the transverse field. Depending on the values of the transverse fields Ω a and Ω b , the critical temperature can increase or decrease with increasing the thickness of the film, such result is not obtained in the uniform transverse field case (Ω a = Ω b ). Furthermore, for each thickness L of the film, a long range ordered phase persist at low temperature for selected values of the transverse field Ω a and arbitrary values of Ω b . The effects of interlayer and intralayer exchange interactions are also examined

  12. Phase diagrams of a spin-1 Ising superlattice with alternating transverse field

    International Nuclear Information System (INIS)

    Saber, A.; Ez-Zahraouy, H.

    2000-09-01

    The effects of alternating transverse fields Ω a and Ω b on the critical behavior of an alternating spin-1 Ising superlattice are studied within an effective field theory with a probability distribution technique that accounts for the single-site spin correlations. Critical temperatures are calculated as a function of the thickness of the superlattice and the strength of the transverse field. Depending on the values of the transverse fields Ω a and Ω b , the critical temperature can increase or decrease with increasing the thickness of the film, such result is not obtained in the uniform transverse field case (Ω a = Ω b ). Furthermore, for each thickness L of the film, a long range ordered phase persists at low temperature for selected values of the transverse field Ω a and arbitrary values of Ω b . The effects of interlayer and intralayer exchange interactions are also examined. (author)

  13. A proposed GaAs-based superlattice solar cell structure with high efficiency and high radiation tolerance

    Science.gov (United States)

    Goradia, Chandra; Clark, Ralph; Brinker, David

    1985-01-01

    A solar cell structure is proposed which uses a GaAs nipi doping superlattice. An important feature of this structure is that photogenerated minority carriers are very quickly collected in a time shorter than bulk lifetime in the fairly heavily doped n and p layers and these carriers are then transported parallel to the superlattice layers to selective ohmic contacts. Assuming that these already-separated carriers have very long recombination lifetimes, due to their being across an indirect bandgap in real space, it is argued that the proposed structure may exhibit superior radiation tolerance along with reasonably high beginning-of-life efficiency.

  14. Spectral Irradiance Measurements Based on Detector

    International Nuclear Information System (INIS)

    Lima, M S; Menegotto, T; Duarte, I; Da Silva, T Ferreira; Alves, L C; Alvarenga, A D; Almeida, G B; Couceiro, I B; Teixeira, R N

    2015-01-01

    This paper presents the preliminary results of the realization of absolute spectral irradiance scale at INMETRO in the ultraviolet, visible and infrared regions using filter radiometers as secondary standards. In the construction of these instruments are used, at least, apertures, interference filters and a trap detector. In the assembly of the trap detectors it was necessary to characterize several photocells in spatial uniformity and shunt resistance. All components were calibrated and these results were analyzed to mount the filter radiometer

  15. Thin film encapsulated 1D thermoelectric detector in an IR microspectrometer

    NARCIS (Netherlands)

    Wu, H.; Emadi, A.; De Graaf, G.; Wolffenbuttel, R.F.

    2010-01-01

    A thermopile-based detector array for use in a miniaturized Infrared (IR) spectrometer has been designed and fabricated using CMOS compatible MEMS technology. The emphasis is on the optimal of the detector array at the system level, while considering the thermal design, the dimensional constraints

  16. Microwave properties of YBa2Cu3O7-δ/PrBa2Cu3O7-δ superlattices

    International Nuclear Information System (INIS)

    Carlos, W.E.; Kaplan, R.; Lowndes, D.H.; Norton, D.P.

    1992-01-01

    We have used non-resonant microwave absorption to study c-axis YBa 2 Cu 3 O 7-δ /PrBa 2 Cu 3 O 7-δ superlattices and compare the response to a film of similarly grown YBa 2 Cu 3 O 7-δ (YBCO). Near the respective transition temperatures, the response of the superlattice samples and the YBCO film have similar amplitudes and orientation dependences. This is consistent with the microwave loss being related to magnetic flux penetration at (110) slip planes. At lower temperatures, the response of the superlattices is much stronger than that of the YBCO film and, while both responses are hysteretic at low temperatures, the widths of the hysteresis have opposite orientation dependences, which we attribute to the role of the PrBa 2 Cu 3 O 7-δ layers. (orig.)

  17. Phonon dispersion relations in monoatomic superlattices: a transfer matrix theory

    International Nuclear Information System (INIS)

    Albuquerque, E.L. de; Fulco, P.

    1986-01-01

    We present a lattice dynamical theory for monoatomic superlattices consisting of alternating layers of two different materials. Using a transfer matrix method we obtain explicit the equation for dispersion of the phonon's bulk modes, including the well known result in the long wave-length limit which can be obtained by elasticity theory. An illustation is shown and its features discussed. (Author) [pt

  18. A CPA study of the phonon structure of disordered superlattices

    International Nuclear Information System (INIS)

    Shijie Xiong; Gendi Pang; Chienhua Tsai.

    1985-08-01

    The phonon structure of superlattices or modulated alloys with substitutional disorder is studied in the Coherent Phase Approximation (CPA). We consider first the case with diagonal disorder only, by adopting a virtual crystal approximation for the force constants. Then we treat the more complicated case with inclusion of off-diagonal disorder. Numerical examples are also studied in both cases. (author)

  19. Improved structural and electrical properties in native Sb2Te3/GexSb2Te3+x van der Waals superlattices due to intermixing mitigation

    Directory of Open Access Journals (Sweden)

    Stefano Cecchi

    2017-02-01

    Full Text Available Superlattices made of Sb2Te3/GeTe phase change materials have demonstrated outstanding performance with respect to GeSbTe alloys in memory applications. Recently, epitaxial Sb2Te3/GeTe superlattices were found to feature GexSb2Te3+x blocks as a result of intermixing between constituting layers. Here we present the epitaxy and characterization of Sb2Te3/GexSb2Te3+x van der Waals superlattices, where GexSb2Te3+x was intentionally fabricated. X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, and lateral electrical transport data are reported. The intrinsic 2D nature of both sublayers is found to mitigate the intermixing in the structures, significantly improving the interface sharpness and ultimately the superlattice structural and electrical properties.

  20. Optical properties of graphene superlattices

    International Nuclear Information System (INIS)

    Le, H Anh; Do, V Nam; Ho, S Ta; Nguyen, D Chien

    2014-01-01

    In this work, the optical responses of graphene superlattices, i.e. graphene subjected to a periodic scalar potential, are theoretically reported. The optical properties were studied by investigating the optical conductivity, which was calculated using the Kubo formalism. It was found that the optical conductivity becomes dependent on the photon polarization and is suppressed in the photon energy range of (0, U b ), where U b is the potential barrier height. In the higher photon energy range, i.e. Ω > U b , the optical conductivity is, however, almost identical to that of pristine graphene. Such behaviors of the optical conductivity are explained microscopically through the analysis of the elements of optical matrices and effectively through a simple model, which is based on the Pauli blocking mechanism. (paper)