Fabrication of sub-micron whole waffer SIS tunnel junctions for millimeter wave mixers

International Nuclear Information System (INIS)

Huq, S.E.; Blamire, M.G.; Evetts, J.E.; Hasko, D.G.; Ahmed, H.

1991-01-01

As a part of a programme for the development of a space-qualified sub-mm-wave mixer operating in the region of one terahertz we have been developing the processes required for the fabrication of submicron whole wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography we have been able to reliably fabricate high quality (V m > 20 mV) submicron tunnel junctions from whole wafer Nb/AlO x /Nb structures. In particular we show that the junction quality is independent of size down to 0.3 μm 2 junction area. The problems of film stress, anodization, registration for electron beam lithography and lift-off, which limit the yield of good quality sub-micron scale junctions are addressed in this paper

Characterization on the coatings of Ni-base alloy with nano- and micron-size Sm{sub 2}O{sub 3} addition prepared by laser deposition

Energy Technology Data Exchange (ETDEWEB)

Zhang Shihong [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)], E-mail: zsh10110903@hotmail.com; Li Mingxi [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); Yoon, Jae Hong; Cho, Tong Yul [School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)

2008-12-01

The coating materials are the powder mixture of micron-size Ni-base alloy powders with both 1.5 wt.% micron-size and nano-size Sm{sub 2}O{sub 3} powders, which are prepared on Q235 steel plate by 2.0 kW CO{sub 2} laser deposition. The results indicate that with rare earth oxide Sm{sub 2}O{sub 3} addition, the width of planar crystallization is smaller than that of the Ni-base alloy coatings. Micron- and nano-Sm{sub 2}O{sub 3}/Ni-base alloy coatings have similar microstructure showing the primary phase of {gamma}-Ni dendrite and eutectic containing {gamma}-Ni and Cr{sub 23}C{sub 6} phases. However, compared to micron-Sm{sub 2}O{sub 3}/Ni-base alloy, preferred orientation of {gamma}-Ni dendrite of nano-Sm{sub 2}O{sub 3}/Ni-base alloy is weakened. Planar crystal of several-{mu}m thickness is first grown and then dendrite growth is observed at 1.5% micron-Sm{sub 2}O{sub 3}/Ni-base alloy coating whereas equiaxed dendrite is grown at 1.5% nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating. Hardness and wear resistance of the coating improves with decreasing Sm{sub 2}O{sub 3} size from micron to nano. The improvement on tribological property of nano-Sm{sub 2}O{sub 3}/Ni-base alloy over micron-Sm{sub 2}O{sub 3}/Ni-base alloy coatings can be attributed to the better resistance of equiaxed dendrite to adhesion interactions during the wear process. In 6 M HNO{sub 3} solution, the corrosion resistance is greatly improved with nano-Sm{sub 2}O{sub 3} addition since the decrease of corrosion ratio along grain-boundary in nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating contributes to harmonization of corrosion potential.

Contact resistance and overlapping capacitance in flexible sub-micron long oxide thin-film transistors for above 100 MHz operation

Energy Technology Data Exchange (ETDEWEB)

Münzenrieder, Niko, E-mail: muenzenrieder@ife.ee.ethz.ch; Salvatore, Giovanni A.; Petti, Luisa; Zysset, Christoph; Büthe, Lars; Vogt, Christian; Cantarella, Giuseppe; Tröster, Gerhard [Electronics Laboratory Swiss Federal Institute of Technology (ETH) Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

2014-12-29

In recent years new forms of electronic devices such as electronic papers, flexible displays, epidermal sensors, and smart textiles have become reality. Thin-film transistors (TFTs) are the basic blocks of the circuits used in such devices and need to operate above 100 MHz to efficiently treat signals in RF systems and address pixels in high resolution displays. Beyond the choice of the semiconductor, i.e., silicon, graphene, organics, or amorphous oxides, the junctionless nature of TFTs and its geometry imply some limitations which become evident and important in devices with scaled channel length. Furthermore, the mechanical instability of flexible substrates limits the feature size of flexible TFTs. Contact resistance and overlapping capacitance are two parasitic effects which limit the transit frequency of transistors. They are often considered independent, while a deeper analysis of TFTs geometry imposes to handle them together; in fact, they both depend on the overlapping length (L{sub OV}) between source/drain and the gate contacts. Here, we conduct a quantitative analysis based on a large number of flexible ultra-scaled IGZO TFTs. Devices with three different values of overlap length and channel length down to 0.5 μm are fabricated to experimentally investigate the scaling behavior of the transit frequency. Contact resistance and overlapping capacitance depend in opposite ways on L{sub OV}. These findings establish routes for the optimization of the dimension of source/drain contact pads and suggest design guidelines to achieve megahertz operation in flexible IGZO TFTs and circuits.

Polymer-free graphene transfer for enhanced reliability of graphene field-effect transistors

International Nuclear Information System (INIS)

Park, Hamin; Park, Ick-Joon; Jung, Dae Yool; Lee, Khang June; Yang, Sang Yoon; Choi, Sung-Yool

2016-01-01

We propose a polymer-free graphene transfer technique for chemical vapor deposition-grown graphene to ensure the intrinsic electrical properties of graphene for reliable transistor applications. The use of a metal catalyst as a supporting layer avoids contamination from the polymer material and graphene films become free of polymer residue after the transfer process. Atomic force microscopy and Raman spectroscopy indicate that the polymer-free transferred graphene shows closer properties to intrinsic graphene properties. The reliability of graphene field-effect transistors (GFETs) was investigated through the analysis of the negative gate bias-stress-induced instability. This work reveals the effect of polymer residues on the reliability of GFETs, and that the developed new polymer-free transfer method enhances the reliability. (letter)

The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

Energy Technology Data Exchange (ETDEWEB)

Ding Meng [Department of Physics, Jilin University, Changchun 130023 (China); Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China); Yao Bin, E-mail: binyao@jlu.edu.c [Department of Physics, Jilin University, Changchun 130023 (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China); Fang Fang; Shen Dezhen; Zhang Zhenzhong [Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

2010-05-31

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra.

The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

International Nuclear Information System (INIS)

Ding Meng; Yao Bin; Zhao Dongxu; Fang Fang; Shen Dezhen; Zhang Zhenzhong

2010-01-01

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra.

Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

International Nuclear Information System (INIS)

Kamimura, Hiroshi; Kato, Masataka.

1991-01-01

A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

Biosensor properties of SOI nanowire transistors with a PEALD Al{sub 2}O{sub 3} dielectric protective layer

Energy Technology Data Exchange (ETDEWEB)

Popov, V. P., E-mail: popov@isp.nsc.ru; Ilnitskii, M. A.; Zhanaev, E. D. [Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation); Myakon’kich, A. V.; Rudenko, K. V. [Russian Academy of Sciences, Physical Technological Institute (Russian Federation); Glukhov, A. V. [Novosibirsk Semiconductor Device Plant and Design Bureau (Russian Federation)

2016-05-15

The properties of protective dielectric layers of aluminum oxide Al{sub 2}O{sub 3} applied to prefabricated silicon-nanowire transistor biochips by the plasma enhanced atomic layer deposition (PEALD) method before being housed are studied depending on the deposition and annealing modes. Coating the natural silicon oxide with a nanometer Al{sub 2}O{sub 3} layer insignificantly decreases the femtomole sensitivity of biosensors, but provides their stability in bioliquids. In deionized water, transistors with annealed aluminum oxide are closed due to the trapping of negative charges of <(1–10) × 10{sup 11} cm{sup −2} at surface states. The application of a positive potential to the substrate (V{sub sub} > 25 V) makes it possible to eliminate the negative charge and to perform multiple measurements in liquid at least for half a year.

Reliability assessment of ultra-thin HfO{sub 2} films deposited on silicon wafer

Energy Technology Data Exchange (ETDEWEB)

Fu, Wei-En [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Chang, Chia-Wei [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Chang, Yong-Qing [Center for Measurement Standards, Industrial Technology Research Institute, Room 216, Building 8, 321 Kuang Fu Road Sec. 2, Hsinchu, Taiwan (China); Yao, Chih-Kai [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China); Liao, Jiunn-Der, E-mail: jdliao@mail.ncku.edu.tw [Department of Materials Science and Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)

2012-09-01

Highlights: Black-Right-Pointing-Pointer Nano-mechanical properties on annealed ultra-thin HfO{sub 2} film are studied. Black-Right-Pointing-Pointer By AFM analysis, hardness of the crystallized HfO{sub 2} film significantly increases. Black-Right-Pointing-Pointer By nano-indention, the film hardness increases with less contact stiffness. Black-Right-Pointing-Pointer Quality assessment on the annealed ultra-thin films can thus be achieved. - Abstract: Ultra-thin hafnium dioxide (HfO{sub 2}) is used to replace silicon dioxide to meet the required transistor feature size in advanced semiconductor industry. The process integration compatibility and long-term reliability for the transistors depend on the mechanical performance of ultra-thin HfO{sub 2} films. The criteria of reliability including wear resistance, thermal fatigue, and stress-driven failure rely on film adhesion significantly. The adhesion and variations in mechanical properties induced by thermal annealing of the ultra-thin HfO{sub 2} films deposited on silicon wafers (HfO{sub 2}/SiO{sub 2}/Si) are not fully understood. In this work, the mechanical properties of an atomic layer deposited HfO{sub 2} (nominal thickness Almost-Equal-To 10 nm) on a silicon wafer were characterized by the diamond-coated tip of an atomic force microscope and compared with those of annealed samples. The results indicate that the annealing process leads to the formation of crystallized HfO{sub 2} phases for the atomic layer deposited HfO{sub 2}. The HfSi{sub x}O{sub y} complex formed at the interface between HfO{sub 2} and SiO{sub 2}/Si, where the thermal diffusion of Hf, Si, and O atoms occurred. The annealing process increases the surface hardness of crystallized HfO{sub 2} film and therefore the resistance to nano-scratches. In addition, the annealing process significantly decreases the harmonic contact stiffness (or thereafter eliminate the stress at the interface) and increases the nano-hardness, as measured by vertically

A light-stimulated synaptic transistor with synaptic plasticity and memory functions based on InGaZnO{sub x}–Al{sub 2}O{sub 3} thin film structure

Energy Technology Data Exchange (ETDEWEB)

Li, H. K.; Chen, T. P., E-mail: echentp@ntu.edu.sg; Liu, P.; Zhang, Q. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); Hu, S. G. [School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore); State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Liu, Y. [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China); Lee, P. S. [School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

2016-06-28

In this work, a synaptic transistor based on the indium gallium zinc oxide (IGZO)–aluminum oxide (Al{sub 2}O{sub 3}) thin film structure, which uses ultraviolet (UV) light pulses as the pre-synaptic stimulus, has been demonstrated. The synaptic transistor exhibits the behavior of synaptic plasticity like the paired-pulse facilitation. In addition, it also shows the brain's memory behaviors including the transition from short-term memory to long-term memory and the Ebbinghaus forgetting curve. The synapse-like behavior and memory behaviors of the transistor are due to the trapping and detrapping processes of the holes, which are generated by the UV pulses, at the IGZO/Al{sub 2}O{sub 3} interface and/or in the Al{sub 2}O{sub 3} layer.

Deep sub-micron FD-SOI for front-end application

International Nuclear Information System (INIS)

Ikeda, H.; Arai, Y.; Hara, K.; Hayakawa, H.; Hirose, K.; Ikegami, Y.; Ishino, H.; Kasaba, Y.; Kawasaki, T.; Kohriki, T.; Martin, E.; Miyake, H.; Mochizuki, A.; Tajima, H.; Tajima, O.; Takahashi, T.; Takashima, T.; Terada, S.; Tomita, H.; Tsuboyama, T.

2007-01-01

In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented

Characteristics of scandate-impregnated cathodes with sub-micron scandia-doped matrices

International Nuclear Information System (INIS)

Yuan Haiqing; Gu Xin; Pan Kexin; Wang Yiman; Liu Wei; Zhang Ke; Wang Jinshu; Zhou Meiling; Li Ji

2005-01-01

We describe in this paper scandate-impregnated cathodes with sub-micron scandia-doped tungsten matrices having an improved uniformity of the Sc distribution. The scandia-doped tungsten powders were made by both liquid-solid doping and liquid-liquid doping methods on the basis of previous research. By improving pressing, sintering and impregnating procedures, we have obtained scandate-impregnated cathodes with a good uniformity of the Sc 2 O 3 - distribution. The porosity of the sub-micron structure matrix and content of impregnants inside the matrix are similar to those of conventionally impregnated cathodes. Space charge limited current densities of more than 30 A/cm 2 at 850 deg. C b have been obtained in a reproducible way. The current density continuously increases during the first 2000 h life test at 950 deg. C b with a dc load of 2 A/cm 2 and are stable for at least 3000 h

Kinetics of Sub-Micron Grain Size Refinement in 9310 Steel

Science.gov (United States)

Kozmel, Thomas; Chen, Edward Y.; Chen, Charlie C.; Tin, Sammy

2014-05-01

Recent efforts have focused on the development of novel manufacturing processes capable of producing microstructures dominated by sub-micron grains. For structural applications, grain refinement has been shown to enhance mechanical properties such as strength, fatigue resistance, and fracture toughness. Through control of the thermo-mechanical processing parameters, dynamic recrystallization mechanisms were used to produce microstructures consisting of sub-micron grains in 9310 steel. Starting with initial bainitic grain sizes of 40 to 50 μm, various levels of grain refinement were observed following hot deformation of 9310 steel samples at temperatures and strain rates ranging from 755 K to 922 K (482 °C and 649 °C) and 1 to 0.001/s, respectively. The resulting deformation microstructures were characterized using scanning electron microscopy and electron backscatter diffraction techniques to quantify the extent of carbide coarsening and grain refinement occurring during deformation. Microstructural models based on the Zener-Holloman parameter were developed and modified to include the effect of the ferrite/carbide interactions within the system. These models were shown to effectively correlate microstructural attributes to the thermal mechanical processing parameters.

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

2014-01-01

The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Nonlinear resistivity in a d-wave superconductor YBa{sub 2}Cu{sub 4}O{sub 8} of sub-micron scale grains

Energy Technology Data Exchange (ETDEWEB)

Deguchi, H; Shoho, T; Kato, Y; Ashida, T; Mito, M; Takagi, S [Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550 (Japan); Hagiwara, M [Faculty of Engineering and Design, Kyoto Institute of Technology, Kyoto 606-8585 (Japan); Koyama, K, E-mail: deguchi@tobata.isc.kyutech.ac.jp [Faculty of Integrated Arts and Science, The University of Tokushima 770-8502 (Japan)

2011-07-20

The d-wave ceramic YBa{sub 2}Cu{sub 4}O{sub 8} superconductor composed of sub-micron size grains is considered as random Josephson-coupled network of 0 and {pi} junctions and shows successive phase transitions. The upper transition occurs inside each grain at T{sub c1} = 82 K and the lower transition occurs among the grains at T{sub c2} = 66 K. We measured the temperature dependence of the current-voltage characteristics of the ceramic YBa{sub 2}Cu{sub 4}O{sub 8} and derived the linear and nonlinear resistivity. The nonlinear resistivity {rho}{sub 2} and {rho}{sub 4} have finite values between T{sub c1} and T{sub c2} and have the peak at the same temperature T{sub p} = 70 K above T{sub c2}. The result agrees with the theoretical one obtained by Li and DomInguez. They interpreted T{sub p} as the crossover temperature from the normal state phase to a chiral paramagnetic one.

Reliability of planar silicon transistors exposed to 60Co γ rays

International Nuclear Information System (INIS)

Blin, A.; Le Ber, J.

1966-01-01

This report gives an account of results obtained during investigations on the reliability of silicon Planar Transistors, irradiated by the 60 Co γ rays. We consider in a first part the variation of the average values of the parameters of the lots under test. Then, a more complete statistical study is carried out (distribution of the values of the parameters within the lots; research of correlations, etc. ). It is clearly stated and shown that evaluation of the degradation of the gain of transistors depends on: the conditions of measurement (voltage, current), after irradiation; the polarisation of the elements during irradiation; the origin of manufacture of the lots under test (4 manufacturers). We show then the difficulties met to predict the behaviour of the transistors under radiation stress, and attempt is made to define practical rules for design engineers. (author) [fr

Low-frequency 1/f noise in MoS{sub 2} transistors: Relative contributions of the channel and contacts

Energy Technology Data Exchange (ETDEWEB)

Renteria, J.; Jiang, C. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Samnakay, R. [Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Goli, P.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California – Riverside, Riverside, California 92521 (United States); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2014-04-14

We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS{sub 2} field-effect transistors revealing the relative contributions of the MoS{sub 2} channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS{sub 2} transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS{sub 2} transistors, are 2 × 10{sup 19} eV{sup −1}cm{sup −3} and 2.5 × 10{sup 20} eV{sup −1}cm{sup −3} for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS{sub 2} transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS{sub 2} and other van der Waals materials.

Fabrication of magnetic and fluorescent chitin and dibutyrylchitin sub-micron particles by oil-in-water emulsification.

Science.gov (United States)

Blanco-Fernandez, Barbara; Chakravarty, Shatadru; Nkansah, Michael K; Shapiro, Erik M

2016-11-01

Chitin is a carbohydrate polymer with unique pharmacological and immunological properties, however, because of its unwieldy chemistry, the synthesis of discreet sized sub-micron particles has not been well reported. This work describes a facile and flexible method to fabricate biocompatible chitin and dibutyrylchitin sub-micron particles. This technique is based on an oil-in-water emulsification/evaporation method and involves the hydrophobization of chitin by the addition of labile butyryl groups onto chitin, disrupting intermolecular hydrogen bonds and enabling solubility in the organic solvent used as the oil phase during fabrication. The subsequent removal of butyryl groups post-fabrication through alkaline saponification regenerates native chitin while keeping particles morphology intact. Examples of encapsulation of hydrophobic dyes and nanocrystals are demonstrated, specifically using iron oxide nanocrystals and coumarin 6. The prepared particles had diameters between 300-400nm for dibutyrylchitin and 500-600nm for chitin and were highly cytocompatible. Moreover, they were able to encapsulate high amounts of iron oxide nanocrystals and were able to label mammalian cells. We describe a technique to prepare sub-micron particles of highly acetylated chitin (>90%) and dibutyrylchitin and demonstrate their utility as carriers for imaging. Chitin is a polysaccharide capable of stimulating the immune system, a property that depends on the acetamide groups, but its insolubility limits its use. No method for sub-micron particle preparation with highly acetylated chitins have been published. The only approach for the preparation of sub-micron particles uses low acetylation chitins. Dibutyrylchitin, a soluble chitin derivative, was used to prepare particles by oil in water emulsification. Butyryl groups were then removed, forming chitin particles. These particles could be suitable for encapsulation of hydrophobic payloads for drug delivery and cell imaging, as well as

New constraints on deformation processes in serpentinite from sub-micron Raman Spectroscopy and TEM

Science.gov (United States)

Smith, S. A. F.; Tarling, M.; Rooney, J. S.; Gordon, K. C.; Viti, C.

2017-12-01

Extensive work has been performed to characterize the mineralogical and mechanical properties of the various serpentine minerals (i.e. antigorite, lizardite, chrysotile, polyhedral and polygonal serpentine). However, correct identification of serpentine minerals is often difficult or impossible using conventional analytical techniques such as optical- and SEM-based microscopy, X-ray diffraction and infrared spectroscopy. Transmission Electron Microscopy (TEM) is the best analytical technique to identify the serpentine minerals, but TEM requires complex sample preparation and typically results in very small analysis areas. Sub-micron confocal Raman spectroscopy mapping of polished thin sections provides a quick and relatively inexpensive way of unambiguously distinguishing the main serpentine minerals within their in-situ microstructural context. The combination of high spatial resolution (with a diffraction-limited system, 366 nm), large-area coverage (up to hundreds of microns in each dimension) and ability to map directly on thin sections allows intricate fault rock textures to be imaged at a sample-scale, which can then form the target of more focused TEM work. The potential of sub-micron Raman Spectroscopy + TEM is illustrated by examining sub-micron-scale mineral intergrowths and deformation textures in scaly serpentinites (e.g. dissolution seams, mineral growth in pressure shadows), serpentinite crack-seal veins and polished fault slip surfaces from a serpentinite-bearing mélange in New Zealand. The microstructural information provided by these techniques has yielded new insights into coseismic dehydration and amorphization processes and the interplay between creep and localised rupture in serpentinite shear zones.

Lung deposition of sub-micron aerosols calculated as a function of age and breathing rate

International Nuclear Information System (INIS)

James, A.C.

1978-01-01

Experimental measurements of lung deposition and especially of regional deposition, of aerosols in the sub-micron size range have been so few that it is worthwhile establishing a method of calculation. A computer routine has therefore been developed to calculate aerosol deposition in successive bronchial and bronchiolar generations of the Weibel 'A' model of human lung for the sub-micron size range where deposition occurs solely by diffusion. This model can be scaled to represent lungs at various ages and vital capacities. Some calculated results are presented here and compared with measurements of lung deposition made under carefully controlled conditions in humans. (author)

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Science.gov (United States)

Bhattacharya, Pallab

2001-01-01

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Design and characterization of radiation resistant integrated circuits for the LHC particle detectors using deep sub-micron CMOS technologies

International Nuclear Information System (INIS)

Anelli, Giovanni Maria

2000-01-01

The electronic circuits associated with the particle detectors of the CERN Large Hadron Collider (LHC) have to work in a highly radioactive environment. This work proposes a methodology allowing the design of radiation resistant integrated circuits using the commercial sub-micron CMOS technology. This method uses the intrinsic radiation resistance of ultra-thin grid oxides, the technology of enclosed layout transistors (ELT), and the protection rings to avoid the radio-induced creation of leakage currents. In order to check the radiation tolerance level, several test structures have been designed and tested with different radiation sources. These tests have permitted to study the physical phenomena responsible for the damages induced by the radiations and the possible remedies. Then, the particular characteristics of ELT transistors and their influence on the design of complex integrated circuits has been explored. The modeling of the W/L ratio, the asymmetries (for instance in the output conductance) and the performance of ELT couplings have never been studied yet. The noise performance of the 0.25 μ CMOS technology, used in the design of several integrated circuits of the LHC detectors, has been characterized before and after irradiation. Finally, two integrated circuits designed using the proposed method are presented. The first one is an analogic memory and the other is a circuit used for the reading of the signals of one of the LHC detectors. Both circuits were irradiated and have endured very high doses practically without any sign of performance degradation. (J.S.)

Self-aligned top-gate InGaZnO thin film transistors using SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Chen, Rongsheng; Zhou, Wei; Zhang, Meng; Wong, Man; Kwok, Hoi Sing

2013-12-02

Self-aligned top-gate amorphous indium–gallium–zinc oxide (a-IGZO) thin film transistors (TFTs) utilizing SiO{sub 2}/Al{sub 2}O{sub 3} stack thin films as gate dielectric are developed in this paper. Due to high quality of the high-k Al{sub 2}O{sub 3} and good interface between active layer and gate dielectric, the resulting a-IGZO TFT exhibits good electrical performance including field-effect mobility of 9 cm{sup 2}/Vs, threshold voltage of 2.2 V, subthreshold swing of 0.2 V/decade, and on/off current ratio of 1 × 10{sup 7}. With scaling down of the channel length, good characteristics are also obtained with a small shift of the threshold voltage and no degradation of subthreshold swing. - Highlights: • Self-aligned top-gate indium–gallium–zinc oxide thin-film transistor is proposed. • SiO{sub 2}/Al{sub 2}O{sub 3} stack gate dielectric is proposed. • The source/drain areas are hydrogen-doped by CHF{sub 3} plasma. • The devices show good electrical performance and scaling down behavior.

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

DEFF Research Database (Denmark)

MacLeod, S. J.; See, A. M.; Keane, Z. K.

2014-01-01

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However......, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET....

Pushing the Performance Limit of Sub-100 nm Molybdenum Disulfide Transistors.

Science.gov (United States)

Liu, Yuan; Guo, Jian; Wu, Yecun; Zhu, Enbo; Weiss, Nathan O; He, Qiyuan; Wu, Hao; Cheng, Hung-Chieh; Xu, Yang; Shakir, Imran; Huang, Yu; Duan, Xiangfeng

2016-10-12

Two-dimensional semiconductors (2DSCs) such as molybdenum disulfide (MoS 2 ) have attracted intense interest as an alternative electronic material in the postsilicon era. However, the ON-current density achieved in 2DSC transistors to date is considerably lower than that of silicon devices, and it remains an open question whether 2DSC transistors can offer competitive performance. A high current device requires simultaneous minimization of the contact resistance and channel length, which is a nontrivial challenge for atomically thin 2DSCs, since the typical low contact resistance approaches for 2DSCs either degrade the electronic properties of the channel or are incompatible with the fabrication process for short channel devices. Here, we report a new approach toward high-performance MoS 2 transistors by using a physically assembled nanowire as a lift-off mask to create ultrashort channel devices with pristine MoS 2 channel and self-aligned low resistance metal/graphene hybrid contact. With the optimized contact in short channel devices, we demonstrate sub-100 nm MoS 2 transistor delivering a record high ON-current of 0.83 mA/μm at 300 K and 1.48 mA/μm at 20 K, which compares well with that of silicon devices. Our study, for the first time, demonstrates that the 2DSC transistors can offer comparable performance to the 2017 target for silicon transistors in International Technology Roadmap for Semiconductors (ITRS), marking an important milestone in 2DSC electronics.

Practical Considerations for Detection and Characterization of Sub-Micron Particles in Protein Solutions by Nanoparticle Tracking Analysis.

Science.gov (United States)

Gruia, Flaviu; Parupudi, Arun; Polozova, Alla

2015-01-01

Nanoparticle Tracking Analysis (NTA) is an emerging analytical technique developed for detection, sizing, and counting of sub-micron particles in liquid media. Its feasibility for use in biopharmaceutical development was evaluated with particle standards and recombinant protein solutions. Measurements of aqueous suspensions of NIST-traceable polystyrene particle standards showed accurate particle concentration detection between 2 × 10(7) and 5 × 10(9) particles/mL. Sizing was accurate for particle standards up to 200 nm. Smaller than nominal value sizes were detected by NTA for the 300-900 nm particles. Measurements of protein solutions showed that NTA performance is solution-specific. Reduced sensitivity, especially in opalescent solutions, was observed. Measurements in such solutions may require sample dilution; however, common sample manipulations, such as dilution and filtration, may result in particle formation. Dilution and filtration case studies are presented to further illustrate such behavior. To benchmark general performance, NTA was compared against asymmetric flow field flow fractionation coupled with multi-angle light scattering (aF4-MALS) and dynamic light scattering, which are other techniques for sub-micron particles. Data shows that all three methods have limitations and may not work equally well under certain conditions. Nevertheless, the ability of NTA to directly detect and count sub-micron particles is a feature not matched by aF4-MALS or dynamic light scattering. Thorough characterization of particulate matter present in protein therapeutics is limited by the lack of analytical methods for particles in the sub-micron size range. Emerging techniques are being developed to bridge this analytical gap. In this study, Nanoparticle Tracking Analysis is evaluated as a potential tool for biologics development. Our results indicate that method performance is molecule-specific and may not work as well under all solution conditions, especially when

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Science.gov (United States)

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

High reliable and stable organic field-effect transistor nonvolatile memory with a poly(4-vinyl phenol) charge trapping layer based on a pn-heterojunction active layer

Energy Technology Data Exchange (ETDEWEB)

Xiang, Lanyi; Ying, Jun; Han, Jinhua; Zhang, Letian, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn; Wang, Wei, E-mail: zlt@jlu.edu.cn, E-mail: wwei99@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

2016-04-25

In this letter, we demonstrate a high reliable and stable organic field-effect transistor (OFET) based nonvolatile memory (NVM) with a polymer poly(4-vinyl phenol) (PVP) as the charge trapping layer. In the unipolar OFETs, the inreversible shifts of the turn-on voltage (V{sub on}) and severe degradation of the memory window (ΔV{sub on}) at programming (P) and erasing (E) voltages, respectively, block their application in NVMs. The obstacle is overcome by using a pn-heterojunction as the active layer in the OFET memory, which supplied a holes and electrons accumulating channel at the supplied P and E voltages, respectively. Both holes and electrons transferring from the channels to PVP layer and overwriting the trapped charges with an opposite polarity result in the reliable bidirectional shifts of V{sub on} at P and E voltages, respectively. The heterojunction OFET exhibits excellent nonvolatile memory characteristics, with a large ΔV{sub on} of 8.5 V, desired reading (R) voltage at 0 V, reliable P/R/E/R dynamic endurance over 100 cycles and a long retention time over 10 years.

Dynamic mixed state in micron bridges on the basis of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x whiskers

CERN Document Server

Zybtsev, S G; Pokrovskii, V Yu

2001-01-01

One studied destruction of superconductivity by current in BSCCO (2212) single-crystal whiskers and in bridges based on them with dimensions of the order of the magnetic field penetration efficient depth. One measured the volt-ampere characteristics (VAC) of micron bridges made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x single-crystal whiskers. It was detected that at temperatures below temperature of superconducting transition in VAC one observed current quasi-periodic abrupt changes of voltage with portions of the constant differential resistance the value of which was proportional to the number of abrupt change. In the narrowest (0.5-1 mu m) bridges one observed up to 10 abrupt changes of voltage. The result is explained by formation of vortex lines under the effect of current

Dual origin of room temperature sub-terahertz photoresponse in graphene field effect transistors

Science.gov (United States)

Bandurin, D. A.; Gayduchenko, I.; Cao, Y.; Moskotin, M.; Principi, A.; Grigorieva, I. V.; Goltsman, G.; Fedorov, G.; Svintsov, D.

2018-04-01

Graphene is considered as a promising platform for detectors of high-frequency radiation up to the terahertz (THz) range due to its superior electron mobility. Previously, it has been shown that graphene field effect transistors (FETs) exhibit room temperature broadband photoresponse to incoming THz radiation, thanks to the thermoelectric and/or plasma wave rectification. Both effects exhibit similar functional dependences on the gate voltage, and therefore, it was difficult to disentangle these contributions in previous studies. In this letter, we report on combined experimental and theoretical studies of sub-THz response in graphene field-effect transistors analyzed at different temperatures. This temperature-dependent study allowed us to reveal the role of the photo-thermoelectric effect, p-n junction rectification, and plasmonic rectification in the sub-THz photoresponse of graphene FETs.

High-temperature performance of MoS{sub 2} thin-film transistors: Direct current and pulse current-voltage characteristics

Energy Technology Data Exchange (ETDEWEB)

Jiang, C.; Samnakay, R.; Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering, University of California—Riverside, Riverside, California 92521 (United States); Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program, University of California—Riverside, Riverside, California 92521 (United States); Rumyantsev, S. L. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States); Ioffe Physical-Technical Institute, St. Petersburg 194021 (Russian Federation); Shur, M. S. [Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)

2015-02-14

We report on fabrication of MoS{sub 2} thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS{sub 2} devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS{sub 2} thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS{sub 2} thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS{sub 2} thin-film transistors in extreme-temperature electronics and sensors.

Short range investigation of sub-micron zirconia particles

Energy Technology Data Exchange (ETDEWEB)

Caracoche, M C; Martinez, J A [Departamento de Fisica, IFLP, Facultad de Ciencias Exactas, CICPBA, Universidad Nacional de La Plata (Argentina); Rivas, P C [IFLP-CONICET, Facultad de Ciencias Agrarias y Forestales, Universidad Nacional de La Plata (Argentina); Bondioli, F; Cannillo, V [Dipartimento di Ingegniria dei Materiali e dell' Ambiente, Facolta di Ingegneria, Universita di Modena e Reggio Emilia (Italy); Ferrari, A M, E-mail: cristina@fisica.unlp.edu.a [Dipartimento di Scienza a Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia (Italy)

2009-05-01

The Perturbed Angular Correlations technique was used to determine the configurations around Zirconium ions and their thermal behavior in non-aggregated sub-micron zirconia spherical particles. Three residues containing- Zr surroundings were determined for the non-crystalline starting particles, which were identified under the assumption of a certain chemical reactions sequence during synthesis. While the one made up mainly by hydroxyl groups was common to both samples, the two involving mainly organic residues were particle size dependent. Upon crystallization, both samples stabilized in the t'- and t- tetragonal forms and the Xc-cubic form but their amounts and temperatures of appearance were different. On heating, the structure of the smaller particles became gradually monoclinic achieving total degradation upon the subsequent cooling to RT.

Improved performance of solution-processed a-InGaZnO thin-film transistors due to Ar/O{sub 2} mixed-plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Kim, Kwan-Soo; Hwang, Yeong-Hyeon; Hwang, In-Chan; Cho, Won-Ju [Kwangwoon University, Seoul (Korea, Republic of)

2014-08-15

We investigated the effects of Ar and O{sub 2} treatment and of Ar/O{sub 2} mixed plasma treatment on the electrical characteristics of solution-processed amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The electrical performance and the instability of a-IGZO TFTs were significantly improved by the plasma treatments. The plasma treatments reduced the carbon-based residual contamination that acted as possible trap sites. In particular, the O{sub 2}-plasma treatment produced a significant improvement in the reliability of a-IGZO TFTs when compared with the Ar-plasma-treated device, owing to the elimination of residual carbon in the active channel of the solution-processed a-IGZO. However, the optimized improvement of the solution-processed a-IGZO TFT under a gate bias stress was obtained for the device treated with an Ar/O{sub 2} mixed-gas plasma. The plasma treatment in the Ar/O{sub 2}-mixed ambience remarkably enhanced not only the reliability but also the electrical performance of the a-IGZO TFT; the on/off-current ratio, the field-effect mobility, and the subthreshold slope were 6.78 x 10{sup 7}, 1.24 cm{sup 2}/V·s, and 513 mV/dec, respectively.

SiO2/ZnO Composite Hollow Sub-Micron Fibers: Fabrication from Facile Single Capillary Electrospinning and Their Photoluminescence Properties

Directory of Open Access Journals (Sweden)

Guanying Song

2017-02-01

Full Text Available In this work, SiO2/ZnO composite hollow sub-micron fibers were fabricated by a facile single capillary electrospinning technique followed by calcination, using tetraethyl orthosilicate (TEOS, polyvinylpyrrolidone (PVP and ZnO nanoparticles as raw materials. The characterization results of the scanning electron microscopy (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FT-IR spectra indicated that the asprepared composite hollow fibers consisted of amorphous SiO2 and hexagonal wurtzite ZnO. The products revealed uniform tubular structure with outer diameters of 400–500 nm and wall thickness of 50–60 nm. The gases generated and the directional escaped mechanism was proposed to illustrate the formation of SiO2/ZnO composite hollow sub-micron fibers. Furthermore, a broad blue emission band was observed in the photoluminescence (PL of SiO2/ZnO composite hollow sub-micron fibers, exhibiting great potential applications as blue light-emitting candidate materials.

The ITO-capped WO{sub 3} nanowires biosensor based on field-effect transistor in label-free protein sensing

Energy Technology Data Exchange (ETDEWEB)

Shariati, Mohsen [Sharif University of Technology, Institute for Nanoscience and Nanotechnology, Tehran (Iran, Islamic Republic of)

2017-05-15

The fabrication of ITO-capped WO{sub 3} nanowires associated with their bio-sensing properties in field-effect transistor diagnostics basis as a biosensor has been reported. The bio-sensing property for manipulated nanowires elucidated that the grown nanostructures were very sensitive to protein. The ITO-capped WO{sub 3} nanowires biosensor showed an intensive bio-sensing activity against reliable protein. Polylysine strongly charged bio-molecule was applied as model system to demonstrate the implementation of materialized biosensor. The employed sensing mechanism was 'label-free' and depended on bio-molecule's intrinsic charge. For nanowires synthesis, the vapor-liquid-solid mechanism was used. Nanowires were beyond a few hundred nanometers in lengths and around 15-20 nm in diameter, while the globe cap's size on the nanowires was around 15-25 nm. The indium tin oxide (ITO) played as catalyst in nanofabrication for WO{sub 3} nanowires growth and had outstanding role in bio-sensing especially for bio-molecule adherence. In applied electric field presence, the fabricated device showed the great potential to enhance medical diagnostics. (orig.)

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Zervos, Ch., E-mail: hzervos@physics.uoc.gr; Georgakilas, A. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group (MRG), Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas - FORTH, P.O. Box 1385, GR-70013 Heraklion, Crete (Greece); Beleniotis, P. [Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece)

2016-04-04

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

Occurrence of weak, sub-micron, tropospheric aerosol events at high Arctic latitudes

Science.gov (United States)

O'Neill, N. T.; Pancrati, O.; Baibakov, K.; Eloranta, E.; Batchelor, R. L.; Freemantle, J.; McArthur, L. J. B.; Strong, K.; Lindenmaier, R.

2008-07-01

Numerous fine mode (sub-micron) aerosol optical events were observed during the summer of 2007 at the High Arctic atmospheric observatory (PEARL) located at Eureka, Nunavut, Canada. Half of these events could be traced to forest fires in southern and eastern Russia and the Northwest Territories of Canada. The most notable findings were that (a) a combination of ground-based measurements (passive sunphotometry, high spectral resolution lidar) could be employed to determine that weak (near sub-visual) fine mode events had occurred, and (b) this data combined with remote sensing imagery products (MODIS, OMI-AI, FLAMBE fire sources), Fourier transform spectroscopy and back trajectories could be employed to identify the smoke events.

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Cyclical Annealing Technique To Enhance Reliability of Amorphous Metal Oxide Thin Film Transistors.

Science.gov (United States)

Chen, Hong-Chih; Chang, Ting-Chang; Lai, Wei-Chih; Chen, Guan-Fu; Chen, Bo-Wei; Hung, Yu-Ju; Chang, Kuo-Jui; Cheng, Kai-Chung; Huang, Chen-Shuo; Chen, Kuo-Kuang; Lu, Hsueh-Hsing; Lin, Yu-Hsin

2018-02-26

This study introduces a cyclical annealing technique that enhances the reliability of amorphous indium-gallium-zinc-oxide (a-IGZO) via-type structure thin film transistors (TFTs). By utilizing this treatment, negative gate-bias illumination stress (NBIS)-induced instabilities can be effectively alleviated. The cyclical annealing provides several cooling steps, which are exothermic processes that can form stronger ionic bonds. An additional advantage is that the total annealing time is much shorter than when using conventional long-term annealing. With the use of cyclical annealing, the reliability of the a-IGZO can be effectively optimized, and the shorter process time can increase fabrication efficiency.

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

Energy Technology Data Exchange (ETDEWEB)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I; Lee, Kwang Hong; Lee, Kenneth Eng Kian [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Yadav, Sachin; Kumar, Annie; Gong, Xiao; Yeo, Yee Chia [National University of Singapore, 21 Lower Kent Ridge Rd, Singapore 119077 (Singapore); Heidelberger, Christopher [Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States); Yoon, Soon Fatt [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fitzgerald, Eugene A. [Low Energy Electronic Systems IRG (LEES), Singapore-MIT Alliance for Research and Technology, 1 CREATE Way, Singapore 138602 (Singapore); Department of Materials Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139 (United States)

2016-08-15

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70 μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.

Chemical-free n-type and p-type multilayer-graphene transistors

Energy Technology Data Exchange (ETDEWEB)

Dissanayake, D. M. N. M., E-mail: nandithad@voxtel-inc.com [Voxtel Inc, Lockey Laboratories, University of Oregon, Eugene Oregon 97402 (United States); Eisaman, M. D. [Sustainable Energy Technologies Department, Brookhaven National Laboratory, Upton, New York 11973 (United States); Department of Electrical and Computer Engineering, Stony Brook University, Stony Brook, New York 11794 (United States); Department of Physics and Astronomy, Stony Brook University, Stony Brook, New York 11794 (United States)

2016-08-01

A single-step doping method to fabricate n- and p-type multilayer graphene (MG) top-gate field effect transistors (GFETs) is demonstrated. The transistors are fabricated on soda-lime glass substrates, with the n-type doping of MG caused by the sodium in the substrate without the addition of external chemicals. Placing a hydrogen silsesquioxane (HSQ) barrier layer between the MG and the substrate blocks the n-doping, resulting in p-type doping of the MG above regions patterned with HSQ. The HSQ is deposited in a single fabrication step using electron beam lithography, allowing the patterning of arbitrary sub-micron spatial patterns of n- and p-type doping. When a MG channel is deposited partially on the barrier and partially on the glass substrate, a p-type and n-type doping profile is created, which is used for fabricating complementary transistors pairs. Unlike chemically doped GFETs in which the external dopants are typically introduced from the top, these substrate doped GFETs allow for a top gate which gives a stronger electrostatic coupling to the channel, reducing the operating gate bias. Overall, this method enables scalable fabrication of n- and p-type complementary top-gated GFETs with high spatial resolution for graphene microelectronic applications.

Modelling of passive heating for replication of sub-micron patterns in optical disk substrates

Energy Technology Data Exchange (ETDEWEB)

Kim, Youngmin; Bae, Jaecheol; Kim, Hongmin; Kang, Shinill [School of Mechanical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul (Korea, Republic of)

2004-05-07

The transcribability of pit or land groove structures in replicating an optical disk substrate greatly affects the performance of a high-density optical disk. However, a solidified layer generated during the polymer filling worsens transcribability because the solidified layer prevents the polymer melt from filling the sub-micron patterns. Therefore, the development of the solidified layer during the filling stage of injection moulding must be delayed. For this delay, passive heating through an insulation layer has been used. In the present study, to examine the development of the solidified layer, delayed by passive heating, the flow of the polymer melt with passive heating was analysed. Passive heating delayed markedly the development of the solidified layer, reduced the viscosity of the polymer melt, and increased the fluidity of the polymer melt in the vicinity of the stamper surface with the sub-micron patterns. As a result, we predict that passive heating can improve the transcribability of an optical disk substrate. To verify our prediction, we fabricated an optical disk substrate by using passive heating of a mould and measured the transcribability of an optical disk substrate.

Modelling of passive heating for replication of sub-micron patterns in optical disk substrates

International Nuclear Information System (INIS)

Kim, Youngmin; Bae, Jaecheol; Kim, Hongmin; Kang, Shinill

2004-01-01

The transcribability of pit or land groove structures in replicating an optical disk substrate greatly affects the performance of a high-density optical disk. However, a solidified layer generated during the polymer filling worsens transcribability because the solidified layer prevents the polymer melt from filling the sub-micron patterns. Therefore, the development of the solidified layer during the filling stage of injection moulding must be delayed. For this delay, passive heating through an insulation layer has been used. In the present study, to examine the development of the solidified layer, delayed by passive heating, the flow of the polymer melt with passive heating was analysed. Passive heating delayed markedly the development of the solidified layer, reduced the viscosity of the polymer melt, and increased the fluidity of the polymer melt in the vicinity of the stamper surface with the sub-micron patterns. As a result, we predict that passive heating can improve the transcribability of an optical disk substrate. To verify our prediction, we fabricated an optical disk substrate by using passive heating of a mould and measured the transcribability of an optical disk substrate

Synthesis and characterization of hollow α-Fe2O3 sub-micron spheres prepared by sol–gel

International Nuclear Information System (INIS)

León, Lizbet; Bustamante, Angel; Osorio, Ana; Olarte, G. S.; Santos Valladares, Luis De Los; Barnes, Crispin H. W.; Majima, Yutaka

2011-01-01

In this work we report the preparation of magnetic hematite hollow sub-micron spheres (α-Fe 2 O 3 ) by colloidal suspensions of ferric nitrate nine-hydrate (Fe(NO 3 ) 3 ·9H 2 O) particles in citric acid solution by following the sol–gel method. After the gel formation, the samples were annealed at different temperatures in an oxidizing atmosphere. Annealing at 180°C resulted in an amorphous phase, without iron oxide formation. Annealing at 250°C resulted in coexisting phases of hematite, maghemite and magnetite, whereas at 400°C, only hematite and maghemite were found. Pure hematite hollow sub-micron spheres with porous shells were formed after annealing at 600°C. The characterization was performed by X-ray diffraction (XRD), Mössbauer spectroscopy (MS) and scanning electron microscopy (SEM).

High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Das, Saptarshi; Roelofs, Andreas [Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Dubey, Madan [U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)

2014-08-25

In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.

Properties and growth peculiarities of Si{sub 0.30}Ge{sub 0.70} stressor integrated in 14 nm fin-based p-type metal-oxide-semiconductor field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Hikavyy, A., E-mail: Andriy.Hikavyy@imec.be; Rosseel, E.; Kubicek, S.; Mannaert, G.; Favia, P.; Bender, H.; Loo, R.; Horiguchi, N.

2016-03-01

Integration of Si{sub 0.30}Ge{sub 0.70} in the Source/Drain (S/D) areas of metal oxide semiconductor transistors built according to 14 nm technological node rules has been shown. SiGe properties and growth peculiarities are presented and elaborated. In order to preserve the fin structures during a pre-epitaxy surface preparation, the H{sub 2} bake pressure had to be increased to 19,998 Pa at 800 °C. Influence of this bake on the Si recess in the S/D areas is presented. Excellent quality of both the raised and the embedded Si{sub 0.30}Ge{sub 0.70} was demonstrated by transmission electron microscopy inspections. Energy-dispersive X-ray spectroscopy measurement showed two stages of SiGe growth for the embedded case: first with a lower Ge content at the beginning of the deposition until the (111) facets are formed, and second with a higher Ge content which is governed by the growth on (111) planes. Nano-beam diffraction analysis showed that SiGe grown in the S/D areas of p-type metal-oxide-semiconductor field-effect transistor is fully elastically relaxed in the direction across the fin and partially strained along the fin. Finally, a strain accumulation effect in the chain of transistors has been observed. - Highlights: • Si{sub 0.30}Ge{sub 0.70} stressor has been implemented in the 14 nm technology node CMOS flow. • Embedded and raised variants have been investigated. • High Si{sub 0.30}Ge{sub 0.70} quality was confirmed. • Si{sub 0.30}Ge{sub 0.70} layer is elastically relaxed across the fin direction. • Partial stress presence and stress accumulation effect were observed.

Intrinsic decoherence theory applied to single C{sub 60} solid state transistors: Robustness in the transmission regimen

Energy Technology Data Exchange (ETDEWEB)

Flores, J.C., E-mail: cflores@uta.cl

2016-03-06

In relation to a given Hamiltonian and intrinsic decoherence, there are subspaces for which coherence remains robust. Robustness can be classified by the parameter ratios (integer, rational or irrational numbers) defining each subspace. Of particular novelty in this work is application to the single-C{sub 60} transistor where coherence becomes robust in the tunnel transmission regime. In this case, the intrinsic-decoherence parameter defining the theory is explicitly evaluated in good agreement with experimental data. Many of these results are expected to hold for standard quantum dots and mesoscopic devices. - Highlights: • Intrinsic decoherence and transport (mesoscopic). • Robustness condition face to decoherence. • Application to the single C{sub 60} solid state transistor. • Parameter determination based on experiments. • Other cases of robustness.

X-ray imaging with sub-micron resolution using large-area photon counting detectors Timepix

Science.gov (United States)

Dudak, J.; Karch, J.; Holcova, K.; Zemlicka, J.

2017-12-01

As X-ray micro-CT became a popular tool for scientific purposes a number of commercially available CT systems have emerged on the market. Micro-CT systems have, therefore, become widely accessible and the number of research laboratories using them constantly increases. However, even when CT scans with spatial resolution of several micrometers can be performed routinely, data acquisition with sub-micron precision remains a complicated task. Issues come mostly from prolongation of the scan time inevitably connected with the use of nano-focus X-ray sources. Long exposure time increases the noise level in the CT projections. Furthermore, considering the sub-micron resolution even effects like source-spot drift, rotation stage wobble or thermal expansion become significant and can negatively affect the data. The use of dark-current free photon counting detectors as X-ray cameras for such applications can limit the issue of increased image noise in the data, however the mechanical stability of the whole system still remains a problem and has to be considered. In this work we evaluate the performance of a micro-CT system equipped with nano-focus X-ray tube and a large area photon counting detector Timepix for scans with effective pixel size bellow one micrometer.

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Large area sub-micron chemical imaging of magnesium in sea urchin teeth.

Science.gov (United States)

Masic, Admir; Weaver, James C

2015-03-01

The heterogeneous and site-specific incorporation of inorganic ions can profoundly influence the local mechanical properties of damage tolerant biological composites. Using the sea urchin tooth as a research model, we describe a multi-technique approach to spatially map the distribution of magnesium in this complex multiphase system. Through the combined use of 16-bit backscattered scanning electron microscopy, multi-channel energy dispersive spectroscopy elemental mapping, and diffraction-limited confocal Raman spectroscopy, we demonstrate a new set of high throughput, multi-spectral, high resolution methods for the large scale characterization of mineralized biological materials. In addition, instrument hardware and data collection protocols can be modified such that several of these measurements can be performed on irregularly shaped samples with complex surface geometries and without the need for extensive sample preparation. Using these approaches, in conjunction with whole animal micro-computed tomography studies, we have been able to spatially resolve micron and sub-micron structural features across macroscopic length scales on entire urchin tooth cross-sections and correlate these complex morphological features with local variability in elemental composition. Copyright © 2015 Elsevier Inc. All rights reserved.

Electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Her, Jim-Long [Division of Natural Science, Center for General Education, Chang Gung University, Taoyuan 333, Taiwan (China); Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Liu, Jiang-Hung; Wang, Hong-Jun; Chen, Ching-Hung [Department of Electronics Engineering, Chang Gung University, Taoyuan 333, Taiwan (China); Koyama, Keiichi [Graduate School of Science and Engineering, Kagoshima University, Kagoshima 890-0065 (Japan)

2014-10-31

In this article, we studied the structural properties and electrical characteristics of GdTiO{sub 3} gate dielectric for amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) applications. The a-IGZO TFT device featuring the GdTiO{sub 3} gate dielectric exhibited better electrical characteristics, including a small threshold voltage of 0.14 V, a large field-effect mobility of 32.3 cm{sup 2}/V-s, a high I{sub on}/I{sub off} current ratio of 4.2 × 10{sup 8}, and a low subthreshold swing of 213 mV/decade. Furthermore, the electrical instability of GdTiO{sub 3} a-IGZO TFTs was investigated under both positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS) conditions. The electron charge trapping in the gate dielectric dominates the PGBS degradation, while the oxygen vacancies control the NGBS degradation. - Highlights: • Indium–gallium–zinc oxide (a-IGZO) thin-film transistor (TFT) • Structural and electrical properties of the GdTiO{sub 3} film were studied. • a-IGZO TFT featuring GdTi{sub x}O{sub y} dielectric exhibited better electrical characteristics. • TFT instability investigated under positive and negative gate-bias stress conditions.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

Science.gov (United States)

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Electrical characterisation of ferroelectric field effect transistors based on ferroelectric HfO{sub 2} thin films

Energy Technology Data Exchange (ETDEWEB)

Yurchuk, Ekaterina

2015-02-06

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO{sub 2}) thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO{sub 2} thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO{sub 2}-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.

Rutile TiO{sub 2} active-channel thin-film transistor using rapid thermal annealing

Energy Technology Data Exchange (ETDEWEB)

Kim, Sung-Jin; Heo, Kwan-Jun; Yoo, Su-Chang; Choi, Seong-Gon [Chungbuk National University, Cheongju (Korea, Republic of); Chang, Seung-Wook [Samsung Display, Co., Ltd., Suwon (Korea, Republic of)

2014-10-15

TiO{sub 2} active-channel thin-film transistors (TFTs), in which the bottom-gate top-contact architecture was prepared with atomic layer deposition grown TiO{sub 2} as the semiconducting layer, were fabricated and then investigated based on key process parameters, such as the rapid thermal annealing (RTA) temperature. Structural analyses suggested that TiO{sub 2} films annealed at temperatures above 500 .deg. C changed from an amorphous to a rutile phase. The TFT with a TiO{sub 2} semiconductor annealed at 600 .deg. C exhibited strongly-saturated output characteristics, a much higher on/off current ratio of 4.3 x 10{sup 5}, and an electron mobility of 0.014 cm{sup 2}/Vs. Moreover, the potential for manipulating TiO{sub 2}-based TFTs with RTA methodology was demonstrated through the realization of a simple resistive-load inverter.

Immobilization of trypsin on sub-micron skeletal polymer monolith

Energy Technology Data Exchange (ETDEWEB)

Yao Chunhe [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Qi Li, E-mail: qili@iccas.ac.cn [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Hu Wenbin [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Wang Fuyi [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yang Gengliang [College of Pharmacy, Hebei University, Baoding 071002 (China)

2011-04-29

A new kind of immobilized trypsin reactor based on sub-micron skeletal polymer monolith has been developed. Covalent immobilization of trypsin on this support was performed using the epoxide functional groups in either a one- or a multi-step reaction. The proteolytic activity of the immobilized trypsin was measured by monitoring the formation of N-{alpha}-benzoyl-L-arginine (BA) which is the digestion product of a substrate N-{alpha}-benzoyl-L-arginine ethyl ester (BAEE). Results showed that the digestion speed was about 300 times faster than that performed in free solution. The performance of such an enzyme reactor was further demonstrated by digesting protein myoglobin. It has been found that the protein digestion could be achieved in 88 s at 30 deg. C, which is comparable to 24 h digestion in solution at 37 {sup o}C. Furthermore, the immobilized trypsin exhibits increased stability even after continuous use compared to that in free solution. The present monolithic enzyme-reactor provides a promising platform for the proteomic research.

Design consideration for dc SQUIDs fabricated in deep sub-micron technology

International Nuclear Information System (INIS)

Ketchen, M.B.

1991-01-01

Design rules for scaling dc SQUID junctions to optimize SQUID performance have been well known for over a decade, and verified down to the sub-micron regime. Practical SQUIDs having well coupled input coils of usable inductance have generally been fabricated at the 2-5 μm level of lithography. Other technologies, silicon in particular, are now routinely practiced at the 0.5 μm level of lithography with impressive demonstrations at the 0.1-0.25 μm level not uncommon. In this paper the implications of applying such fabrication capability to advance dc SQUID technology are explored. In particular the issues of scaling practical dc SQUIDs down to the 0.1-0.25 μm regime are examined, using as a prototype design the basic washer SQUID with a spiral input coil

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

Energy Technology Data Exchange (ETDEWEB)

Kanaki, Toshiki, E-mail: kanaki@cryst.t.u-tokyo.ac.jp; Asahara, Hirokatsu; Ohya, Shinobu, E-mail: ohya@cryst.t.u-tokyo.ac.jp; Tanaka, Masaaki, E-mail: masaaki@ee.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

2015-12-14

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I{sub DS} by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I{sub DS} by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale.

Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO{sub 2} nanogranular films

Energy Technology Data Exchange (ETDEWEB)

Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn; Chao, Jin Yu; Xiao, Hui [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2014-12-15

Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO{sub 2} nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics.

Enhancement of carrier mobility in MoS{sub 2} field effect transistors by a SiO{sub 2} protective layer

Energy Technology Data Exchange (ETDEWEB)

Shao, Peng-Zhi; Zhao, Hai-Ming; Cao, Hui-Wen; Wang, Xue-Feng; Pang, Yu; Li, Yu-Xing; Deng, Ning-Qin; Yang, Yi; Ren, Tian-Ling, E-mail: RenTL@tsinghua.edu.cn, E-mail: zhangsh@sz.tsinghua.edu.cn [Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China); Zhang, Jing [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Zhang, Guang-Yu [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); CollaborativeInnovation Center of Quantum Matter, Beijing 100190 (China); Zhang, Sheng, E-mail: RenTL@tsinghua.edu.cn, E-mail: zhangsh@sz.tsinghua.edu.cn [Institute of Microelectronics and Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084 (China); The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Shanghai 200050 (China); Advanced Sensor and Integrated System Lab, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China)

2016-05-16

Molybdenum disulfide is a promising channel material for field effect transistors (FETs). In this paper, monolayer MoS{sub 2} grown by chemical vapor deposition (CVD) was used to fabricate top-gate FETs through standard optical lithography. During the fabrication process, charged impurities and interface states are introduced, and the photoresist is not removed cleanly, which both limit the carrier mobility and the source-drain current. We apply a SiO{sub 2} protective layer, which is deposited on the surface of MoS{sub 2}, in order to avoid the MoS{sub 2} directly contacting with the photoresist and the ambient environment. Therefore, the contact property between the MoS{sub 2} and the electrodes is improved, and the Coulomb scattering caused by the charged impurities and the interface states is reduced. Comparing MoS{sub 2} FETs with and without a SiO{sub 2} protective layer, the SiO{sub 2} protective layer is found to enhance the characteristics of the MoS{sub 2} FETs, including transfer and output characteristics. A high mobility of ∼42.3 cm{sup 2}/V s is achieved, which is very large among the top-gate CVD-grown monolayer MoS{sub 2} FETs.

Achievement of normally-off AlGaN/GaN high-electron mobility transistor with p-NiO{sub x} capping layer by sputtering and post-annealing

Energy Technology Data Exchange (ETDEWEB)

Huang, Shyh-Jer [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Chou, Cheng-Wei, E-mail: j2222222229@gmail.com [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Su, Yan-Kuin, E-mail: yksu@mail.ncku.edu.tw [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lin, Jyun-Hao; Yu, Hsin-Chieh; Chen, De-Long [Department of Electrical Engineering, Institute of Microelectronics and Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Ruan, Jian-Long [National Chung-Shan Institute of Science and Technology, Taoyuan, Taiwan (China)

2017-04-15

Highlights: • A technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. • The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. • The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. • The V{sub th} hysteresis is extremely small at about 33 mV. - Abstract: In this paper, we present a technique to fabricate normally off GaN-based high-electron mobility transistor (HEMT) by sputtering and post-annealing p-NiO{sub x} capping layer. The p-NiO{sub x} layer is produced by sputtering at room temperature and post-annealing at 500 °C for 30 min in pure O{sub 2} environment to achieve high hole concentration. The V{sub th} shifts from −3 V in the conventional transistor to 0.33 V, and on/off current ratio became 10{sup 7}. The forward and reverse gate breakdown increase from 3.5 V and −78 V to 10 V and −198 V, respectively. The reverse gate leakage current is 10{sup −9} A/mm, and the off-state drain-leakage current is 10{sup −8} A/mm. The V{sub th} hysteresis is extremely small at about 33 mV. We also investigate the mechanism that increases hole concentration of p-NiO{sub x} after annealing in oxygen environment resulted from the change of Ni{sup 2+} to Ni{sup 3+} and the surge of (111)-orientation.

Field emission current from a junction field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Monshipouri, Mahta; Abdi, Yaser, E-mail: y.abdi@ut.ac.ir [University of Tehran, Nano-Physics Research Laboratory, Department of Physics (Iran, Islamic Republic of)

2015-04-15

Fabrication of a titanium dioxide/carbon nanotube (TiO{sub 2}/CNT)-based transistor is reported. The transistor can be considered as a combination of a field emission transistor and a junction field-effect transistor. Using direct current plasma-enhanced chemical vapor deposition (DC-PECVD) technique, CNTs were grown on a p-typed (100)-oriented silicon substrate. The CNTs were then covered by TiO{sub 2} nanoparticles 2–5 nm in size, using an atmospheric pressure CVD technique. In this device, TiO{sub 2}/CNT junction is responsible for controlling the emission current. High on/off-current ratio and proper gate control are the most important advantages of device. A model based on Fowler–Nordheim equation is utilized for calculation of the emission current and the results are compared with experimental data. The effect of TiO{sub 2}/CNT hetero-structure is also investigated, and well modeled.

Transistor-based particle detection systems and methods

Science.gov (United States)

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

2015-06-09

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

Accelerating the life of transistors

International Nuclear Information System (INIS)

Qi Haochun; Lü Changzhi; Zhang Xiaoling; Xie Xuesong

2013-01-01

Choosing small and medium power switching transistors of the NPN type in a 3DK set as the study object, the test of accelerating life is conducted in constant temperature and humidity, and then the data are statistically analyzed with software developed by ourselves. According to degradations of such sensitive parameters as the reverse leakage current of transistors, the lifetime order of transistors is about more than 10 4 at 100 °C and 100% relative humidity (RH) conditions. By corrosion fracture of transistor outer leads and other failure modes, with the failure truncated testing, the average lifetime rank of transistors in different distributions is extrapolated about 10 3 . Failure mechanism analyses of degradation of electrical parameters, outer lead fracture and other reasons that affect transistor lifetime are conducted. The findings show that the impact of external stress of outer leads on transistor reliability is more serious than that of parameter degradation. (semiconductor devices)

High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics

Energy Technology Data Exchange (ETDEWEB)

Hong, Young Ki; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Kim, Sunkook, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701 (Korea, Republic of); Yoo, Geonwook; Yoo, Byungwook; Oh, Min Suk, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Display Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816 (Korea, Republic of); Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

2016-05-15

Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS{sub 2} TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS{sub 2} and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

EXPLORING THE ROLE OF SUB-MICRON-SIZED DUST GRAINS IN THE ATMOSPHERES OF RED L0–L6 DWARFS

Energy Technology Data Exchange (ETDEWEB)

Hiranaka, Kay; Cruz, Kelle L.; Baldassare, Vivienne F. [Hunter College, Department of Physics and Astronomy, City University of New York, 695 Park Ave, New York, NY 10065 (United States); Douglas, Stephanie T. [American Museum of Natural History, Department of Astrophysics, Central Park West at 79th Street, New York, NY 10024 (United States); Marley, Mark S., E-mail: khiranak@hunter.cuny.edu [NASA Ames Research Center, MS-245-3, Moffett Field, CA 94035 (United States)

2016-10-20

We examine the hypothesis that the red near-infrared colors of some L dwarfs could be explained by a “dust haze” of small particles in their upper atmospheres. This dust haze would exist in conjunction with the clouds found in dwarfs with more typical colors. We developed a model that uses Mie theory and the Hansen particle size distributions to reproduce the extinction due to the proposed dust haze. We apply our method to 23 young L dwarfs and 23 red field L dwarfs. We constrain the properties of the dust haze including particle size distribution and column density using Markov Chain Monte Carlo methods. We find that sub-micron-range silicate grains reproduce the observed reddening. Current brown dwarf atmosphere models include large-grain (1–100 μ m) dust clouds but not sub-micron dust grains. Our results provide a strong proof of concept and motivate a combination of large and small dust grains in brown dwarf atmosphere models.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

Science.gov (United States)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Low Noise Bias Current/Voltage References Based on Floating-Gate MOS Transistors

DEFF Research Database (Denmark)

Igor, Mucha

1997-01-01

The exploitation of floating-gate MOS transistors as reference current and voltage sources is investigated. Test structures of common source and common drain floating-gate devices have been implemented in a commercially available 0.8 micron double-poly CMOS process. The measurements performed...

Vertical organic transistors

International Nuclear Information System (INIS)

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-01-01

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

Vertical organic transistors.

Science.gov (United States)

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Sub-micron resolution selected area electron channeling patterns.

Science.gov (United States)

Guyon, J; Mansour, H; Gey, N; Crimp, M A; Chalal, S; Maloufi, N

2015-02-01

Collection of selected area channeling patterns (SACPs) on a high resolution FEG-SEM is essential to carry out quantitative electron channeling contrast imaging (ECCI) studies, as it facilitates accurate determination of the crystal plane normal with respect to the incident beam direction and thus allows control the electron channeling conditions. Unfortunately commercial SACP modes developed in the past were limited in spatial resolution and are often no longer offered. In this contribution we present a novel approach for collecting high resolution SACPs (HR-SACPs) developed on a Gemini column. This HR-SACP technique combines the first demonstrated sub-micron spatial resolution with high angular accuracy of about 0.1°, at a convenient working distance of 10mm. This innovative approach integrates the use of aperture alignment coils to rock the beam with a digitally calibrated beam shift procedure to ensure the rocking beam is maintained on a point of interest. Moreover a new methodology to accurately measure SACP spatial resolution is proposed. While column considerations limit the rocking angle to 4°, this range is adequate to index the HR-SACP in conjunction with the pattern simulated from the approximate orientation deduced by EBSD. This new technique facilitates Accurate ECCI (A-ECCI) studies from very fine grained and/or highly strained materials. It offers also new insights for developing HR-SACP modes on new generation high-resolution electron columns. Copyright © 2014 Elsevier B.V. All rights reserved.

High reliability EPI-base radiation hardened power transistor

International Nuclear Information System (INIS)

Clark, L.E.; Saltich, J.L.

1978-01-01

A high-voltage power transistor is described which is able to withstand fluences as high as 3 x 10 14 neutrons per square centimeter and still be able to operate satisfactorily. The collector may be made essentially half as thick and twice as heavily doped as normally and its base is made in two regions which together are essentially four times as thick as the normal power transistor base region. The base region has a heavily doped upper region and a lower region intermediate the upper heavily doped region and the collector. The doping in the intermediate region is as close to intrinsic as possible, in any event less than about 3 x 10 15 impurities per cubic centimeter. The second base region has small width in comparison to the first base region, the ratio of the first to the second being at least about 5 to 1. The base region having the upper heavily doped region and the intermediate or lower low doped region contributes to the higher breakdown voltage which the transistor is able to withstand. The high doping of the collector region essentially lowers that portion of the breakdown voltage achieved by the collector region. Accordingly, it is necessary to transfer certain of this breakdown capability to the base region and this is achieved by using the upper region of heavily doped and an intermediate or lower region of low doping

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor.

Science.gov (United States)

Vitale, Wolfgang A; Casu, Emanuele A; Biswas, Arnab; Rosca, Teodor; Alper, Cem; Krammer, Anna; Luong, Gia V; Zhao, Qing-T; Mantl, Siegfried; Schüler, Andreas; Ionescu, A M

2017-03-23

Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature. Currently pursued approaches to achieve such a subthermionic subthreshold swing consist in alternative carrier injection mechanisms, like quantum mechanical band-to-band tunneling (BTBT) in Tunnel FETs or abrupt phase-change in metal-insulator transition (MIT) devices. The strengths of the BTBT and MIT have been combined in a hybrid device architecture called phase-change tunnel FET (PC-TFET), in which the abrupt MIT in vanadium dioxide (VO 2 ) lowers the subthreshold swing of strained-silicon nanowire TFETs. In this work, we demonstrate that the principle underlying the low swing in the PC-TFET relates to a sub-unity body factor achieved by an internal differential gate voltage amplification. We study the effect of temperature on the switching ratio and the swing of the PC-TFET, reporting values as low as 4.0 mV/decade at 25 °C, 7.8 mV/decade at 45 °C. We discuss how the unique characteristics of the PC-TFET open new perspectives, beyond FETs and other steep-slope transistors, for low power electronics, analog circuits and neuromorphic computing.

Water ice and sub-micron ice particles on Tethys and Mimas

Science.gov (United States)

Scipioni, Francesca; Nordheim, Tom; Clark, Roger Nelson; D'Aversa, Emiliano; Cruikshank, Dale P.; Tosi, Federico; Schenk, Paul M.; Combe, Jean-Philippe; Dalle Ore, Cristina M.

2017-10-01

IntroductionWe present our ongoing work, mapping the variation of the main water ice absorption bands, and the distribution of the sub-micron particles, across Mimas and Tethys’ surfaces using Cassini-VIMS cubes acquired in the IR range (0.8-5.1 μm). We present our results in the form of maps of variation of selected spectral indicators (depth of absorption bands, reflectance peak height, spectral slopes).Data analysisVIMS acquires hyperspectral data in the 0.3-5.1 μm spectral range. We selected VIMS cubes of Tethys and Mimas in the IR range (0.8-5.1 μm). For all pixels in the selected cubes, we measured the band depths for water-ice absorptions at 1.25, 1.5 and 2.02 μm and the height of the 3.6 μm reflection peak. Moreover, we considered the spectral indictors for particles smaller than 1 µm [1]: (i) the 2 µm absorption band is asymmetric and (ii) it has the minimum shifted to longer λ (iii) the band depth ratio 1.5/2.0 µm decreases; (iv) the reflection peak at 2.6 µm decreases; (v) the Fresnel reflection peak is suppressed; (vi) the 5 µm reflectance is decreased relative to the 3.6 µm peak. To characterize the global variation of water-ice band depths, and of sub-micron particles spectral indicators, across Mimas and Tethys, we sampled the two satellites’ surfacees with a 1°x1° fixed-resolution grid and then averaged the band depths and peak values inside each square cell.3. ResultsFor both moons we find that large geologic features, such as the Odysseus and Herschel impact basins, do not correlate with water ice’s abundance variation. For Tethys, we found a quite uniform surface on both hemispheres. The only deviation from this pattern shows up on the trailing hemisphere, where we notice two north-oriented, dark areas around 225° and 315°. For Mimas, the leading and trailing hemispheres appear to be quite similar in water ice abundance, the trailing portion having water ice absorption bands lightly more suppressed than the leading side

Low operating voltage InGaZnO thin-film transistors based on Al{sub 2}O{sub 3} high-k dielectrics fabricated using pulsed laser deposition

Energy Technology Data Exchange (ETDEWEB)

Geng, G. Z.; Liu, G. X.; Zhang, Q.; Shan, F. K. [Qingdao University, Qingdao (China); DongEui University, Busan (Korea, Republic of); Lee, W. J.; Shin, B. C. [DongEui University, Busan (Korea, Republic of); Cho, C. R. [Pusan National University, Busan (Korea, Republic of)

2014-05-15

Low-voltage-driven amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) with an Al{sub 2}O{sub 3} dielectric were fabricated on a Si substrate by using pulsed laser deposition. Both Al{sub 2}O{sub 3} and IGZO thin films are amorphous, and the thin films have very smooth surfaces. The Al{sub 2}O{sub 3} gate dielectric exhibits a very low leakage current density of 1.3 x 10{sup -8} A/cm{sup 2} at 5 V and a high capacitance density of 60.9 nF/cm{sup 2}. The IGZO TFT with a structure of Ni/IGZO/Al{sub 2}O{sub 3}/Si exhibits high performance with a low threshold voltage of 1.18 V, a high field effect mobility of 20.25 cm{sup 2}V{sup -1}s{sup -1}, an ultra small subthreshold swing of 87 mV/decade, and a high on/off current ratio of 3 x 10{sup 7}.

Optimization of exposure procedures for sub-quarter-micron CMOS applications

Science.gov (United States)

Hotta, Shoji; Onozuka, Toshihiko; Fukumoto, Keiko; Shirai, Seiichiro; Okazaki, Shinji

1998-06-01

We investigated various exposure procedures to minimize the Critical Dimension (CD) variation for the patterning of sub- quarter micron gates. To examine dependence of the CD variation on the pattern pitch and defocus conditions, the light intensity profiles of four different mask structures: (1) a binary mask with clear field, (2) a binary mask with dark field, (3) a phase-edge type phase-shifting mask (a phase-edge PSM) with clear field, and (4) a halftone phase- shifting mask (a halftone PSM) were compared, where exposure wavelength was 248 nm and numerical aperture (NA) of KrF stepper was 0.55. For 200-nm gate patterns, dependence of the CD variation on the pattern pitch and defocus conditions was minimized by a phase-edge PSM with clear field. By optimizing the illumination condition for a phase-edge PSM exposure, we obtained the CD variation of 10 nm at the minimum gate pitch of 0.8 micrometer and the defocus condition of plus or minus 0.4 micrometer. Applying the optimized exposure procedure to the device fabrication process, we obtained the total CD variation of plus or minus 27 nm.

Study of SiN{sub x}:H{sub y} passivant layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Redondo-Cubero, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Gago, R. [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, 28049 Madrid (Spain); Romero, M.F.; Gonzalez-Posada, F.; Brana, A.F.; Munoz, E. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Jimenez, A. [Instituto de Sistemas Optoelectronicos y Microtecnologia and Dpto. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, 28040 Madrid (Spain); Dpto. Electronica, Escuela Politecnica, Universidad de Alcala, 28805 Alcala de Henares (Spain)

2008-07-01

In this work, hydrogenated silicon nitride (SiN{sub x}:H{sub y}) grown by chemical vapour deposition as passivant layers for high electron mobility transistors (HEMT) have been studied. The film composition and bonding structure were determined by ion beam analysis and X-ray absorption spectroscopy techniques, respectively. The effects of gas precursors (SiH{sub 4}/N{sub 2} and SiH{sub 4}/NH{sub 3}) and film/substrate interface on the film growth have been addressed. The growth on different substrates (Si, GaN, AlGaN), and the effects of plasma pre-treatments have been studied before the growth and the film growth evolution. Results yield no significant differences in all the analysed samples. This points out the relevant role of SiHn radicals as growth precursor species and that intrinsic characteristics of the SiNx:Hy layers are not affected by the film/substrate interface. Hence, improved performance of HEMT with surface plasma pre-treatments before passivation should be related to extrinsic mechanisms (such as creation of defects in AlGaN surface, removal of the surface contamination or ion-induced roughness). (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Compact 2 Micron Seed Laser, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of innovative compact, high power and extremely reliable 2 micron seed laser using newly developed Tm3+ doped germanate glass...

Area- and energy-efficient CORDIC accelerators in deep sub-micron CMOS technologies

Science.gov (United States)

Vishnoi, U.; Noll, T. G.

2012-09-01

The COordinate Rotate DIgital Computer (CORDIC) algorithm is a well known versatile approach and is widely applied in today's SoCs for especially but not restricted to digital communications. Dedicated CORDIC blocks can be implemented in deep sub-micron CMOS technologies at very low area and energy costs and are attractive to be used as hardware accelerators for Application Specific Instruction Processors (ASIPs). Thereby, overcoming the well known energy vs. flexibility conflict. Optimizing Global Navigation Satellite System (GNSS) receivers to reduce the hardware complexity is an important research topic at present. In such receivers CORDIC accelerators can be used for digital baseband processing (fixed-point) and in Position-Velocity-Time estimation (floating-point). A micro architecture well suited to such applications is presented. This architecture is parameterized according to the wordlengths as well as the number of iterations and can be easily extended for floating point data format. Moreover, area can be traded for throughput by partially or even fully unrolling the iterations, whereby the degree of pipelining is organized with one CORDIC iteration per cycle. From the architectural description, the macro layout can be generated fully automatically using an in-house datapath generator tool. Since the adders and shifters play an important role in optimizing the CORDIC block, they must be carefully optimized for high area and energy efficiency in the underlying technology. So, for this purpose carry-select adders and logarithmic shifters have been chosen. Device dimensioning was automatically optimized with respect to dynamic and static power, area and performance using the in-house tool. The fully sequential CORDIC block for fixed-point digital baseband processing features a wordlength of 16 bits, requires 5232 transistors, which is implemented in a 40-nm CMOS technology and occupies a silicon area of 1560 μm2 only. Maximum clock frequency from circuit

The 3 micron spectrum of NGC 4565

International Nuclear Information System (INIS)

Adamson, A.J.; Whittet, D.C.B.

1990-01-01

Researchers spectrum of NGC 4565 is essentially featureless. The absence of the 3.0 micron feature (Tau 3.0 less than 0.05) implies that the extinction to the nucleus does not arise to a significant degree in molecular clouds. Researchers deduce Tau 3.0/A sub V less than 0.01, compared with approx. 0.022 for GC-IRS7. These results support the conclusion (McFadzean et al. 1989) that the 3.0 micron absorption in the GC-IR sources is due to the presence of ice in a (probably single) foreground molecular cloud. The 3.4 micron feature is also weak or absent in the researchers spectrum of NGC 4565 (Tau 3.4 less than or equal to 0.07), hence, Tau 3.4/A sub V less than or equal to 0.016, compared with approx. 0.008 towards GC-IRS7. The absence of the feature in NGC 4565 at the signal-to-noise level of the current observations is consistent with a probable moderate degree of extinction towards the nucleus. The observations of NGC 4565 provide a useful comparison for studies of dust in the Galaxy. Limits have been set on the strengths of the 3.0 and 3.4 micron features in NGC 4565. The absence of 3.0 micron absorption is significant, and supports the view that the feature at this wavelength in the Galactic Centre is due to water-ice absorption in a foreground molecular cloud. The non-detection of the 3.4 micron absorption is less surprising and provides indirect support for the association between this feature and the diffuse interstellar medium. The current spectrum probably represents the best that can be achieved with a single-detector instrument within reasonable integration times. It will clearly be of interest in the future to obtain spectra of higher signal-to-noise, as a positive detection of the 3.4 micron feature in an external galaxy, even at a low level, would be of considerable astrophysical significance

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Compact 2 Micron Seed Laser, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of new compact, high power and extremely reliable 2 micron seed laser using newly developed Tm3+ doped germanate glass fibers,...

High mobility amorphous InGaZnO{sub 4} thin film transistors formed by CO{sub 2} laser spike annealing

Energy Technology Data Exchange (ETDEWEB)

Chung, Chen-Yang; Zhu, Bin; Ast, Dieter G.; Thompson, Michael O. [Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States); Greene, Raymond G. [Corning Incorporated, Corning, New York 14831 (United States)

2015-03-23

Amorphous InGaZnO{sub 4} (a-IGZO) thin film transistors (TFTs) hold great potential for large area and flexible electronics with current research focused on improving the mobility and stability. In this work, we report on properties of IGZO TFTs fabricated using laser spike annealing (LSA) with a scanned continuous wave CO{sub 2} laser. For peak annealing temperatures near 430 °C and a 1 ms dwell, TFTs exhibit saturation field-effect mobilities above 70 cm{sup 2}/V-s (V{sub on} ∼ −3 V), a value over 4 times higher than furnace-annealed control samples (∼16 cm{sup 2}/V-s). A model linking oxygen deficient defect structures with limited structural relaxation after the LSA anneal is proposed to explain the observed high mobility. This mobility is also shown to be comparable to the estimated trap-free mobility in oxide semiconductors and suggests that shallow traps can be removed by transient thermal annealing under optimized conditions.

Failure rates for accelerated acceptance testing of silicon transistors

Science.gov (United States)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.; Burke, Robert A.; Dubey, Madan, E-mail: madan.dubey.civ@mail.mil [Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, Maryland 20723 (United States); Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun [Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005 (United States)

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.

Block copolymer stabilized nonaqueous biocompatible sub-micron emulsions for topical applications.

Science.gov (United States)

Atanase, Leonard Ionut; Riess, Gérard

2013-05-20

Polyethylene glycol (PEG) 400/Miglyol 812 non-aqueous sub-micron emulsions were developed due to the fact that they are of interest for the design of drug-loaded biocompatible topical formulations. These types of emulsions were favourably stabilized by poly (2-vinylpyridine)-b-poly (butadiene) (P2VP-b-PBut) copolymer with DPBut>DP2VP, each of these sequences being well-adapted to the solubility parameters of PEG 400 and Miglyol 812, respectively. This type of block copolymers, which might limit the Ostwald ripening, appeared to be more efficient stabilizers than low molecular weight non-ionic surfactants. The emulsion characteristics, such as particle size, stability and viscosity at different shear rates were determined as a function of the phase ratio, the copolymer concentration and storage time. It was further shown that Acyclovir, as a model drug of low water solubility, could be incorporated into the PEG 400 dispersed phase, with no significant modification of the initial emulsion characteristics. Copyright © 2013 Elsevier B.V. All rights reserved.

Current fluctuation of electron and hole carriers in multilayer WSe{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho-Kyun; Jin, Jun Eon; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); Kim, Yong Jin; Kim, Young Keun [Department of Materials Science and Engineering, Korea University, Seoul 02481 (Korea, Republic of); Shin, Minju [School of Electrical Engineering, Korea University, Seoul 02481 (Korea, Republic of); IMEP-LAHC, Grenoble INP-MINATEC, 3 Parvis Louis Neel, 38016 Grenoble (France)

2015-12-14

Two-dimensional materials have outstanding scalability due to their structural and electrical properties for the logic devices. Here, we report the current fluctuation in multilayer WSe{sub 2} field effect transistors (FETs). In order to demonstrate the impact on carrier types, n-type and p-type WSe{sub 2} FETs are fabricated with different work function metals. Each device has similar electrical characteristics except for the threshold voltage. In the low frequency noise analysis, drain current power spectral density (S{sub I}) is inversely proportional to frequency, indicating typical 1/f noise behaviors. The curves of the normalized drain current power spectral density (NS{sub I}) as a function of drain current at the 10 Hz of frequency indicate that our devices follow the carrier number fluctuation with correlated mobility fluctuation model. This means that current fluctuation depends on the trapping-detrapping motion of the charge carriers near the channel interface. No significant difference is observed in the current fluctuation according to the charge carrier type, electrons and holes that occurred in the junction and channel region.

Sub-parts per million NO2 chemi-transistor sensors based on composite porous silicon/gold nanostructures prepared by metal-assisted etching.

Science.gov (United States)

Sainato, Michela; Strambini, Lucanos Marsilio; Rella, Simona; Mazzotta, Elisabetta; Barillaro, Giuseppe

2015-04-08

Surface doping of nano/mesostructured materials with metal nanoparticles to promote and optimize chemi-transistor sensing performance represents the most advanced research trend in the field of solid-state chemical sensing. In spite of the promising results emerging from metal-doping of a number of nanostructured semiconductors, its applicability to silicon-based chemi-transistor sensors has been hindered so far by the difficulties in integrating the composite metal-silicon nanostructures using the complementary metal-oxide-semiconductor (CMOS) technology. Here we propose a facile and effective top-down method for the high-yield fabrication of chemi-transistor sensors making use of composite porous silicon/gold nanostructures (cSiAuNs) acting as sensing gate. In particular, we investigate the integration of cSiAuNs synthesized by metal-assisted etching (MAE), using gold nanoparticles (NPs) as catalyst, in solid-state junction-field-effect transistors (JFETs), aimed at the detection of NO2 down to 100 parts per billion (ppb). The chemi-transistor sensors, namely cSiAuJFETs, are CMOS compatible, operate at room temperature, and are reliable, sensitive, and fully recoverable for the detection of NO2 at concentrations between 100 and 500 ppb, up to 48 h of continuous operation.

Transistor design considerations for low-noise preamplifiers

International Nuclear Information System (INIS)

Fair, R.B.

1976-01-01

A review is presented of design considerations for GaAs Schottky-barrier FETs and other types of transistors in low-noise amplifiers for capacitive sources which are used in nuclear radiation detectors and high speed fiber-optic communication systems. Ultimate limits on performance are evaluated in terms of the g/sub m//C/sub i/ ratio and the gate leakage current to minimize the noise sources. Si bipolar transistors and the future prospects of GaAs, Si and InAs MISFETs are discussed, and performance is compared to FETs currently being used in low-noise preamplifiers

Sub-micron Hard X-ray Fluorescence Imaging of Synthetic Elements

Science.gov (United States)

Jensen, Mark P.; Aryal, Baikuntha P.; Gorman-Lewis, Drew; Paunesku, Tatjana; Lai, Barry; Vogt, Stefan; Woloschak, Gayle E.

2013-01-01

Synchrotron-based X-ray fluorescence microscopy (SXFM) using hard X-rays focused into sub-micron spots is a powerful technique for elemental quantification and mapping, as well as microspectroscopic measurement such as μ-XANES (X-ray absorption near edge structure). We have used SXFM to image and simultaneously quantify the transuranic element plutonium at the L3 or L2 edge as well as lighter biologically essential elements in individual rat pheochromocytoma (PC12) cells after exposure to the long-lived plutonium isotope 242Pu. Elemental maps reveal that plutonium localizes principally in the cytoplasm of the cells and avoids the cell nucleus, which is marked by the highest concentrations of phosphorus and zinc, under the conditions of our experiments. The minimum detection limit under typical acquisition conditions for an average 202 μm2 cell is 1.4 fg Pu/cell or 2.9 × 10−20 moles Pu/μm2, which is similar to the detection limit of K-edge SXFM of transition metals at 10 keV. Copper electron microscopy grids were used to avoid interference from gold X-ray emissions, but traces of strontium present in naturally occurring calcium can still interfere with plutonium detection using its Lα X-ray emission. PMID:22444530

Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y{sub 2}O{sub 3} passivation

Energy Technology Data Exchange (ETDEWEB)

An, Sungjin; Mativenga, Mallory; Kim, Youngoo; Jang, Jin, E-mail: jjang@khu.ac.kr [Advanced Display Research Center, Department of Information Display, Kyung Hee University, Dongdaemun-gu, Seoul 130-701 (Korea, Republic of)

2014-08-04

We demonstrate back channel improvement of back-channel-etch amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors by using solution-processed yttrium oxide (Y{sub 2}O{sub 3}) passivation. Two different solvents, which are acetonitrile (35%) + ethylene glycol (65%), solvent A and deionized water, solvent B are investigated for the spin-on process of the Y{sub 2}O{sub 3} passivation—performed after patterning source/drain (S/D) Mo electrodes by a conventional HNO{sub 3}-based wet-etch process. Both solvents yield devices with good performance but those passivated by using solvent B exhibit better light and bias stability. Presence of yttrium at the a-IGZO back interface, where it occupies metal vacancy sites, is confirmed by X-ray photoelectron spectroscopy. The passivation effect of yttrium is more significant when solvent A is used because of the existence of more metal vacancies, given that the alcohol (65% ethylene glycol) in solvent A may dissolve the metal oxide (a-IGZO) through the formation of alkoxides and water.

Fabrication and independent control of patterned polymer gate for a few-layer WSe{sub 2} field-effect transistor

Energy Technology Data Exchange (ETDEWEB)

Hong, Sung Ju; Park, Min; Kang, Hojin; Park, Yung Woo, E-mail: ywpark@snu.ac.kr [Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Lee, Minwoo; Jeong, Dae Hong [Department of Chemistry Education, Seoul National University, Seoul 151-742 (Korea, Republic of)

2016-08-15

We report the fabrication of a patterned polymer electrolyte for a two-dimensional (2D) semiconductor, few-layer tungsten diselenide (WSe{sub 2}) field-effect transistor (FET). We expose an electron-beam in a desirable region to form the patterned structure. The WSe{sub 2} FET acts as a p-type semiconductor in both bare and polymer-covered devices. We observe a highly efficient gating effect in the polymer-patterned device with independent gate control. The patterned polymer gate operates successfully in a molybdenum disulfide (MoS{sub 2}) FET, indicating the potential for general applications to 2D semiconductors. The results of this study can contribute to large-scale integration and better flexibility in transition metal dichalcogenide (TMD)-based electronics.

Sensitivity of MODIS 2.1 micron Channel for Off-Nadir View Angles for Use in Remote Sensing of Aerosol

Science.gov (United States)

Gatebe, C. K.; King, M. D.; Tsay, S.-C.; Ji, Q.

2000-01-01

Remote sensing of aerosol over land, from MODIS will be based on dark targets using mid-IR channels 2.1 and 3.9 micron. This approach was developed by Kaufman et al (1997), who suggested that dark surface reflectance in the red (0.66 micron -- rho(sub 0.66)) channel is half of that at 2.2 micron (rho(sub 2.2)), and the reflectance in the blue (0.49 micron - rho(sub 0.49)) channel is a quarter of that at 2.2 micron. Using this relationship, the surface reflectance in the visible channels can be predicted within Delta.rho(sub 0.49) approximately Delat.rho(sub 0.66) approximately 0.006 from rho(sub 2.2) for rho(sub 2.2) remote sensing of aerosols over land surfaces from space, we are validating the relationships for off-nadir view angles using Cloud Absorption Radiometer (CAR) data. The CAR data are available for channels between 0.3 and 2.3 micron and for different surface types and conditions: forest, tundra, ocean, sea-ice, swamp, grassland and over areas covered with smoke. In this study we analyzed data collected during the Smoke, Clouds, and Radiation - Brazil (SCAR-B) experiment to validate Kaufman et al.'s (1997) results for non-nadir view angles. We will show the correlation between rho(sub 0.472), rho(sub 0.675), and rho(sub 2.2) for view angles between nadir (0 deg) and 55 deg off-nadir, and for different viewing directions in the backscatter and forward scatter directions.

The Transistor as Low Level Switch

Energy Technology Data Exchange (ETDEWEB)

Lyden, Anders

1963-10-15

The common collector transistor switch has in the on state with open emitter a certain offset voltage U{sub EK} {approx_equal} -kT/qB{sub N}. This expression is derived in a new, more physical way. It is further shown at which emitter current the current amplification factor B{sub N} should be measured to get a correct value for the above expression. The collector current I at zero collector voltage I{sub K} = I{sub 0}(exp(qU{sub E}/kT) - 1) extremely well. Substitution of I{sub EBO} and I{sub KBO} by I{sub 0} in Eber's and Moll's relations consequently improves these equations and the characteristics of the transistor switch can be better determined. At switching on and off transients appear across the switch. The influence of the 'spike' at switching off can be described by an current I{sub SPIKE} which is easy to calculate. I{sub SPIKE} is approximately dependent only on the base - emitter depletion layer capacitance and the chopper frequency f{sub 0}. Some compensated switches have lower drift than the drift in U{sub EK}. They may, for example, have a temperature drift < 0.2 {mu}V/deg C and a long time drift < 2 {mu}V/week. Some compensated switches also have I{sub SPIKE} < 10{sup -12} f{sub 0}A. The static offset current in the off state can easily be made < 10{sup -12} A.

Nanogranular SiO{sub 2} proton gated silicon layer transistor mimicking biological synapses

Energy Technology Data Exchange (ETDEWEB)

Liu, M. J.; Huang, G. S., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Feng, P., E-mail: gshuang@fudan.edu.cn, E-mail: pfeng@nju.edu.cn; Shao, F.; Wan, Q. [School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

2016-06-20

Silicon on insulator (SOI)-based transistors gated by nanogranular SiO{sub 2} proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

Sub-micron opto-chemical probes for studying living neurons

Science.gov (United States)

Hossein-Zadeh, M.; Delgado, J.; Schweizer, F.; Lieberman, R.

2017-02-01

We have fabricated sub-micron opto-chemical probes for pH, oxygen and calcium monitoring and demonstrated their application in intracellular and extracellular monitoring of neurons (cortical neuronal cultures and acute hippocampal slices). Using these probes, we have measured extracellular pH in the stratum radiatum of the CA1 region of mouse hippocampus upon stimulation of presynaptic Schaffer collateral axons. Synaptic transmission was monitored using standard electrophysiological techniques. We find that the local pH transiently changes in response to synaptic stimulation. In addition, the geometry of the functionalized region on the probe combined with high sensitivity imaging enables simultaneous monitoring of spatially adjacent but distinct compartments. As proof of concept we impaled cultured neurons with the probe measured calcium and pH inside as well as directly outside of neurons as we changed the pH and calcium concentration in the physiological solution in the perfusion chamber. As such these probes can be used to study the impact of the environment on both cellular and extra-cellular space. Additionally as the chemical properties of the surrounding medium can be controlled and monitored with high precision, these probes enable differential measurement of the target parameter referenced to a stable bath. This approach eliminates the uncertainties associated with non-chemical fluctuations in the fluorescent emission and result in a self-calibrated opto-chemical probe. We have also demonstrated multifunctional probes that are capable of measuring up to three parameters in the extracellular space in brain slices.

Organic thin film transistors and polymer light-emitting diodes patterned by polymer inking and stamping

International Nuclear Information System (INIS)

Li Dawen; Guo, L Jay

2008-01-01

To fully realize the advantages of organic flexible electronics, patterning is very important. In this paper we show that a purely additive patterning technique, termed polymer inking and stamping, can be used to pattern conductive polymer PEDOT and fabricate sub-micron channel length organic thin film transistors. In addition, we applied the technique to transfer a stack of metal/conjugated polymer in one step and fabricated working polymer light-emitting devices. Based on the polymer inking and stamping technique, a roll-to-roll printing for high throughput fabrication has been demonstrated. We investigated and explained the mechanism of this process based on the interfacial energy consideration and by using the finite element analysis. This technique can be further extended to transfer more complex stacked layer structures, which may benefit the research on patterning on flexible substrates

EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

Science.gov (United States)

Demming, Anna

2012-09-01

behaviour in devices fabricated from chemically reduced graphene oxide. The work provided an important step forward for graphene electronics, which has been hampered by difficulties in scaling up the mechanical exfoliation techniques required to produce the high-quality graphene often needed for functioning devices [8]. In Sweden, researchers have developed a transistor design that they fabricate using standard III-V parallel processing, which also has great promise for scaling up production. Their transistor is based on a vertical array of InAs nanowires, which provide high electron mobility and the possibility of high-speed and low-power operation [9]. Different fabrication techniques and design parameters can influence the properties of transistors. Researchers in Belgium used a new method based on high-vacuum scanning spreading resistance microscopy to study the effect of diameter on carrier profile in nanowire transistors [10]. They then used experimental data and simulations to gain a better understanding of how this influenced the transistor performance. In Japan, Y Ohno and colleagues at Nagoya University have reported how atomic layer deposition of an insulating layer of HfO2 on carbon nanotube field effect transistors can change the carrier from p-type to n-type [11]. Carrier type switching—'ambipolar behaviour'—and hysteresis of carbon nanotube network transistors can make achieving reliable device performance challenging. However studies have also suggested that the hysteretic properties may be exploited in non-volatile memory applications. A collaboration of researchers in Italy and the US demonstrated transistor and memory cell behaviour in a system based on a carbon nanotube network [13]. Their device had relatively fast programming, good endurance and the charge retention was successfully enhanced by limiting exposure to air. Progress in understanding transistor behaviour has inspired other innovations in device applications. Nanowires are notoriously

Sensitivity of MODIS 2.1 micron Channel for Off-Nadir View Angles for Use in Remote Sensing of Aerosol

Science.gov (United States)

Gatebe, C. K.; King, M. D.; Tsay, S.-C.; Ji, Q.

2000-01-01

Remote sensing of aerosol over land, from MODIS will be based on dark targets using mid-IR channels 2.1 and 3.9 micron. This approach was developed by Kaufman et al (1997), who suggested that dark surface reflectance in the red (0.66 micron -- rho(sub 0.66)) channel is half of that at 2.2 micron (rho(sub 2.2)), and the reflectance in the blue (0.49 micron - rho(sub 0.49)) channel is a quarter of that at 2.2 micron. Using this relationship, the surface reflectance in the visible channels can be predicted within Delta.rho(sub 0.49) approximately Delat.rho(sub 0.66) approximately 0.006 from rho(sub 2.2) for rho(sub 2.2) view angle - the nadir (theta = 0 deg). Considering the importance of the results in remote sensing of aerosols over land surfaces from space, we are validating the relationships for off-nadir view angles using Cloud Absorption Radiometer (CAR) data. The CAR data are available for channels between 0.3 and 2.3 micron and for different surface types and conditions: forest, tundra, ocean, sea-ice, swamp, grassland and over areas covered with smoke. In this study we analyzed data collected during the Smoke, Clouds, and Radiation - Brazil (SCAR-B) experiment to validate Kaufman et al.'s (1997) results for non-nadir view angles. We will show the correlation between rho(sub 0.472), rho(sub 0.675), and rho(sub 2.2) for view angles between nadir (0 deg) and 55 deg off-nadir, and for different viewing directions in the backscatter and forward scatter directions.

Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality

Energy Technology Data Exchange (ETDEWEB)

Lei, Dian; Wang, Wei; Gong, Xiao, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org; Liang, Gengchiau; Yeo, Yee-Chia, E-mail: elegong@nus.edu.sg, E-mail: yeo@ieee.org [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Zhang, Zheng; Pan, Jisheng [Institute of Material Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore); Tok, Eng-Soon [Department of Physics, National University of Singapore, Singapore 117551 (Singapore)

2016-01-14

The effect of room temperature sulfur passivation of the surface of Ge{sub 0.83}Sn{sub 0.17} prior to high-k dielectric (HfO{sub 2}) deposition is investigated. X-ray photoelectron spectroscopy (XPS) was used to examine the chemical bonding at the interface of HfO{sub 2} and Ge{sub 0.83}Sn{sub 0.17}. Sulfur passivation is found to be effective in suppressing the formation of both Ge oxides and Sn oxides. A comparison of XPS results for sulfur-passivated and non-passivated Ge{sub 0.83}Sn{sub 0.17} samples shows that sulfur passivation of the GeSn surface could also suppress the surface segregation of Sn atoms. In addition, sulfur passivation reduces the interface trap density D{sub it} at the high-k dielectric/Ge{sub 0.83}Sn{sub 0.17} interface from the valence band edge to the midgap of Ge{sub 0.83}Sn{sub 0.17}, as compared with a non-passivated control. The impact of the improved D{sub it} is demonstrated in Ge{sub 0.83}Sn{sub 0.17} p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs). Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs with sulfur passivation show improved subthreshold swing S, intrinsic transconductance G{sub m,int}, and effective hole mobility μ{sub eff} as compared with the non-passivated control. At a high inversion carrier density N{sub inv} of 1 × 10{sup 13 }cm{sup −2}, sulfur passivation increases μ{sub eff} by 25% in Ge{sub 0.83}Sn{sub 0.17} p-MOSFETs.

AlN and Al oxy-nitride gate dielectrics for reliable gate stacks on Ge and InGaAs channels

Energy Technology Data Exchange (ETDEWEB)

Guo, Y.; Li, H.; Robertson, J. [Engineering Department, Cambridge University, Cambridge CB2 1PZ (United Kingdom)

2016-05-28

AlN and Al oxy-nitride dielectric layers are proposed instead of Al{sub 2}O{sub 3} as a component of the gate dielectric stacks on higher mobility channels in metal oxide field effect transistors to improve their positive bias stress instability reliability. It is calculated that the gap states of nitrogen vacancies in AlN lie further away in energy from the semiconductor band gap than those of oxygen vacancies in Al{sub 2}O{sub 3}, and thus AlN might be less susceptible to charge trapping and have a better reliability performance. The unfavourable defect energy level distribution in amorphous Al{sub 2}O{sub 3} is attributed to its larger coordination disorder compared to the more symmetrically bonded AlN. Al oxy-nitride is also predicted to have less tendency for charge trapping.

Reliability and validity of the de Morton Mobility Index in individuals with sub-acute stroke.

Science.gov (United States)

Braun, Tobias; Marks, Detlef; Thiel, Christian; Grüneberg, Christian

2018-02-04

To establish the validity and reliability of the de Morton Mobility Index (DEMMI) in patients with sub-acute stroke. This cross-sectional study was performed in a neurological rehabilitation hospital. We assessed unidimensionality, construct validity, internal consistency reliability, inter-rater reliability, minimal detectable change and possible floor and ceiling effects of the DEMMI in adult patients with sub-acute stroke. The study included a total sample of 121 patients with sub-acute stroke. We analysed validity (n = 109) and reliability (n = 51) in two sub-samples. Rasch analysis indicated unidimensionality with an overall fit to the model (chi-square = 12.37, p = 0.577). All hypotheses on construct validity were confirmed. Internal consistency reliability (Cronbach's alpha = 0.94) and inter-rater reliability (intraclass correlation coefficient = 0.95; 95% confidence interval: 0.92-0.97) were excellent. The minimal detectable change with 90% confidence was 13 points. No floor or ceiling effects were evident. These results indicate unidimensionality, sufficient internal consistency reliability, inter-rater reliability, and construct validity of the DEMMI in patients with a sub-acute stroke. Advantages of the DEMMI in clinical application are the short administration time, no need for special equipment and interval level data. The de Morton Mobility Index, therefore, may be a useful performance-based bedside test to measure mobility in individuals with a sub-acute stroke across the whole mobility spectrum. Implications for Rehabilitation The de Morton Mobility Index (DEMMI) is an unidimensional measurement instrument of mobility in individuals with sub-acute stroke. The DEMMI has excellent internal consistency and inter-rater reliability, and sufficient construct validity. The minimal detectable change of the DEMMI with 90% confidence in stroke rehabilitation is 13 points. The lack of any floor or ceiling effects on hospital admission indicates

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa; Fahad, Hossain M.; Smith, Casey E.; Rojas, Jhonathan Prieto

2015-01-01

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Cylindrical-shaped nanotube field effect transistor

KAUST Repository

Hussain, Muhammad Mustafa

2015-12-29

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

Improved high temperature refractory. [MgCr/sub 2/O/sub 4/ composite with ZrO/sub 2/

Science.gov (United States)

Singh, J.P.; James, J.; Picciolo, J.J.

1985-12-10

A high chromia refractory composite has been developed with improved thermal shock resistance and containing about 5 to 30 wt % of unstabilized ZrO/sub 2/ having a temperature-dependent phase change resulting in large expansion mismatch between the ZrO/sub 2/ and the chromia matrix which causes microcracks to form during cooling in the high chromia matrix. The particle size preferably is primarily between about 0.6 to 5 microns and particularly below about 3 microns with an average size in the order of 1.2 to 1.8 microns.

Modeling of anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene metal-oxide semiconductor field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Chang, Jiwon [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

2015-06-07

Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS{sub 2} and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS{sub 2} is comprehensively analyzed. Benchmarking monolayer HfS{sub 2} with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS{sub 2} than in phosphorene due to the degenerate CB valleys of monolayer HfS{sub 2}. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS{sub 2} MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS{sub 2} MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.

Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

Energy Technology Data Exchange (ETDEWEB)

Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

2012-10-30

We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

High field-effect mobility at the (Sr,Ba)SnO{sub 3}/BaSnO{sub 3} interface

Energy Technology Data Exchange (ETDEWEB)

Fujiwara, Kohei, E-mail: kfujiwara@imr.tohoku.ac.jp; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2016-08-15

A perovskite oxide, BaSnO{sub 3}, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO{sub 3}-based heterostructures with atomically smooth surfaces, fabricated on SrTiO{sub 3} substrates by the (Sr,Ba)SnO{sub 3} buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO{sub 3} as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO{sub 3}-based field-effect transistors.

Grain orientation and strain measurements in sub-micron wide passivated individual aluminum test structures

International Nuclear Information System (INIS)

Tamura, N.; Valek, B.C.; Spolenak, R.; MacDowell, A.A.; Celestre, R.S.; Padmore, H.A.; Brown, W.L.; Marieb, T.; Bravman, J.C.; Batterman, B.W.; Patel, J.R.

2001-01-01

An X-ray microdiffraction dedicated beamline, combining white and monochromatic beam capabilities, has been built at the Advanced Light Source. The purpose of this beamline is to address the myriad of problems in Materials Science and Physics that require submicron x-ray beams for structural characterization. Many such problems are found in the general area of thin films and nano-materials. For instance, the ability to characterize the orientation and strain state in individual grains of thin films allows us to measure structural changes at a very local level. These microstructural changes are influenced heavily by such parameters as deposition conditions and subsequent treatment. The accurate measurement of strain gradients at the micron and sub-micron level finds many applications ranging from the strain state under nano-indenters to gradients at crack tips. Undoubtedly many other applications will unfold in the future as we gain experience with the capabilities and limitations of this instrument. We have applied this technique to measure grain orientation and residual stress in single grains of pure Al interconnect lines and preliminary results on post-electromigration test experiments are presented. It is shown that measurements with this instrument can be used to resolve the complete stress tensor (6 components) in a submicron volume inside a single grain of Al under a passivation layer with an overall precision of about 20 MPa. The microstructure of passivated lines appears to be complex, with grains divided into identifiable subgrains and noticeable local variations of both tensile/compressive and shear stresses within single grains

Metal nanoparticle film-based room temperature Coulomb transistor.

Science.gov (United States)

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Study on ionizing radiation effects of bipolar transistor with BPSG films

International Nuclear Information System (INIS)

Lu Man; Zhang Xiaoling; Xie Xuesong; Sun Jiangchao; Wang Pengpeng; Lu Changzhi; Zhang Yanxiu

2013-01-01

Background: Because of the damage induced by ionizing radiation, bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current. This will bring serious problems to electronic system. Purpose: In order to ensure the reliability of the device work in the radiation environments, the device irradiation reinforcement technology is used. Methods: The characteristics of 60 Co γ irradiation and annealing at different temperatures in bipolar transistors and voltage regulators (JW117) with different passive films for SiO 2 +BPSG+SiO 2 and SiO 2 +SiN have been investigated. Results: The devices with BPSG film enhanced radiation tolerance significantly. Because BPSG films have better absorption for Na + in SiO 2 layer, the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced. It may be the main reason for BJT with BPSG film having a good radiation hardness. And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films. Conclusions: A method of improving the ionizing irradiation hardness of bipolar transistors is proposed. As well as the linear integrated circuits which containing bipolar transistors, an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided. (authors)

Ge{sub 1−x}Si{sub x} on Ge-based n-type metal–oxide semiconductor field-effect transistors by device simulation combined with high-order stress–piezoresistive relationships

Energy Technology Data Exchange (ETDEWEB)

Lee, Chang-Chun, E-mail: changchunlee@cycu.edu.tw [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Hsieh, Chia-Ping [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China); Huang, Pei-Chen; Cheng, Sen-Wen [Department of Mechanical Engineering, Chung Yuan Christian University 200, Chung Pei Rd., Chungli City, Taoyuan County 32023, Taiwan, ROC (China); Liao, Ming-Han [Department of Mechanical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan, ROC (China)

2016-03-01

The considerably high carrier mobility of Ge makes Ge-based channels a promising candidate for enhancing the performance of next-generation devices. The n-type metal–oxide semiconductor field-effect transistor (nMOSFET) is fabricated by introducing the epitaxial growth of high-quality Ge-rich Ge{sub 1−x}Si{sub x} alloys in source/drain (S/D) regions. However, the short channel effect is rarely considered in the performance analysis of Ge-based devices. In this study, the gate-width dependence of a 20 nm Ge-based nMOSFET on electron mobility is investigated. This investigation uses simulated fabrication procedures combined with the relationship of the interaction between stress components and piezoresistive coefficients at high-order terms. Ge{sub 1−x}Si{sub x} alloys, namely, Ge{sub 0.96}Si{sub 0.04}, Ge{sub 0.93}Si{sub 0.07}, and Ge{sub 0.86}Si{sub 0.14}, are individually tested and embedded into the S/D region of the proposed device layout and are used in the model of stress estimation. Moreover, a 1.0 GPa tensile contact etching stop layer (CESL) is induced to explore the effect of bi-axial stress on device geometry and subsequent mobility variation. Gate widths ranging from 30 nm to 4 μm are examined. Results show a significant change in stress when the width is < 300 nm. This phenomenon becomes notable when the Si in the Ge{sub 1−x}Si{sub x} alloy is increased. The stress contours of the Ge channel confirm the high stress components induced by the Ge{sub 0.86}Si{sub 0.14} stressor within the device channel. Furthermore, the stresses (S{sub yy}) of the channel in the transverse direction become tensile when CESL is introduced. Furthermore, when pure S/D Ge{sub 1−x}Si{sub x} alloys are used, a maximum mobility gain of 28.6% occurs with an ~ 70 nm gate width. A 58.4% increase in mobility gain is obtained when a 1.0 GPa CESL is loaded. However, results indicate that gate width is extended to 200 nm at this point. - Highlights: • A 20 nm Ge-based n

A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

Science.gov (United States)

She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

2017-02-01

A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors

International Nuclear Information System (INIS)

Shin, H. T.; Kim, K. H.; Kim, K. S.

2004-01-01

In this paper, we propose a novel photonic base current analysis method to characterize the interface states in heterojunction bipolar transistors (HBTs) by using the photonic I-V characteristics under sub-bandgap photonic excitation. For the photonic current-voltage characterization of HBTs, an optical source with a photon energy less than the bandgap energy of Al 0.3 Ga 0.7 As and GaAs (E ph = 0.95 eV g,AlGaAs = 1.79 eV, E g,GaAs = 1.45 eV) is employed for the characterization of the interface states distributed in the photo-responsive energy band (E C - 0.95 ≤ E it ≤ E C ) in emitter-base heterojunction at HBTs. The proposed novel method, which is applied to bipolar junction transistors for the first time, is simple, and an accurate analysis of interface traps in HBTs is possible. By using the photonic base-current and the dark-base-current, we qualitatively analyze the interface trap at the Al 0.3 Ga 0.7 As/GaAs heterojunction interface in HBTs.

Vertically aligned carbon nanotube field-effect transistors

KAUST Repository

Li, Jingqi

2012-10-01

Vertically aligned carbon nanotube field-effect transistors (CNTFETs) have been developed using pure semiconducting carbon nanotubes. The source and drain were vertically stacked, separated by a dielectric, and the carbon nanotubes were placed on the sidewall of the stack to bridge the source and drain. Both the effective gate dielectric and gate electrode were normal to the substrate surface. The channel length is determined by the dielectric thickness between source and drain electrodes, making it easier to fabricate sub-micrometer transistors without using time-consuming electron beam lithography. The transistor area is much smaller than the planar CNTFET due to the vertical arrangement of source and drain and the reduced channel area. © 2012 Elsevier Ltd. All rights reserved.

Optimized thermal amplification in a radiative transistor

Energy Technology Data Exchange (ETDEWEB)

Prod' homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younes, E-mail: younes.ezzahri@univ-poitiers.fr; Drevillon, Jeremie; Joulain, Karl [Institut Pprime, CNRS, Université de Poitiers, ISAE-ENSMA, F-86962 Futuroscope Chasseneuil (France)

2016-05-21

The thermal performance of a far-field radiative transistor made up of a VO{sub 2} base in between a blackbody collector and a blackbody emitter is theoretically studied and optimized. This is done by using the grey approximation on the emissivity of VO{sub 2} and deriving analytical expressions for the involved heat fluxes and transistor amplification factor. It is shown that this amplification factor can be maximized by tuning the base temperature close to its critical one, which is determined by the temperature derivative of the VO{sub 2} emissivity and the equilibrium temperatures of the collector and emitter. This maximization is the result of the presence of two bi-stable temperatures appearing during the heating and cooling processes of the VO{sub 2} base and enables a thermal switching (temperature jump) characterized by a sizeable variation of the collector-to-base and base-to-emitter heat fluxes associated with a slight change of the applied power to the base. This switching effect leads to the optimization of the amplification factor and therefore it could be used for thermal modulation purposes.

Micron Scale Mineralogy

Science.gov (United States)

Caldwell, W. A.; Tamura, N.; Celestre, R. S.; Padmore, H. A.; Patel, J. R.

2002-12-01

Although x-ray diffraction has been used for nearly a century as the mineralogist's definitive tool in determining crystalline structures, it has proved impossible to use this technique to spatially resolve the highly heterogeneous nature of many minerals at the mesoscopic level. Due to recent revolutions in the brightness of x-ray sources and in our ability to focus x-rays, we can now carry out conventional monochromatic rotation crystallography as well as Laue diffraction with sub-micron spatial resolution and produce maps of orientation, strain, mineral type, and even chemical speciation over tens of microns in a short amount of time. We have pioneered the development of these techniques at the 3rd generation synchrotron radiation source (Advanced Light Source) in Berkeley, and will describe their application to understanding the structure of a quartz-geode. Our results show the manner in which grain structure and texture change as a function of distance from the cavity wall and are compared with models of crystal growth in such systems. This example highlights the great utility of a synchrotron based x-ray micro-diffraction beamline and the possibilities it opens to the mineralogist.

Sub-50 nm gate length SOI transistor development for high performance microprocessors

International Nuclear Information System (INIS)

Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

2004-01-01

Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

Metal nanoparticle film–based room temperature Coulomb transistor

Science.gov (United States)

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

High intensity laser interactions with sub-micron droplets

International Nuclear Information System (INIS)

Mountford, L.C.

1999-01-01

A high-density source of liquid ethanol droplets has been developed, characterised and used in laser interaction studies for the first time. Mie Scattering and attenuation measurements show that droplets with a radius of (0.5 ± 0.1) μm and atomic densities of 10 19 atoms/cm 3 can be produced, bridging the gap between clusters and macroscopic solids. Lower density (10 16 cm -3 ) sprays can also be produced and these are electrostatically split into smaller droplets with a radius of (0.3 ± 0.1) μm. This work has been accepted for publication in Review of Scientific Instruments. A range of high intensity interaction experiments have been carried out with this unique sub-micron source. The absolute yield of keV x-rays, generated using 527 nm, 2 ps pulses focused to ∼10 17 W/cm 2 , was measured for the first time. ∼7 μJ of x-rays with photon energies above 1 keV were produced, comparable to yields obtained from much higher Z Xenon clusters. At intensities ≤10 16 W/cm 2 the yield from droplets exceeds that from solid targets of similar Z. The droplet medium is debris free and self-renewing, providing a suitable x-ray source for lithographic techniques. Due to the spacing between the droplets, it was expected that the droplet plasma temperature would exceed that of a solid target plasma, which is typically limited by rapid heat conduction to <1 keV. Analysis of the x-ray data shows this to be true with a mean droplet plasma temperature of (2 ± 0.8) keV, and a number of measurements exceeding 5 keV (to appear in Applied Physics Letters). The absorption of high intensity laser pulses in the dense spray has been measured for the first time and this was found to be wavelength and polarisation independent and in excess of 60%. These first interaction measurements clearly indicate that there are significant differences between the laser heating of droplet, solid and cluster targets. (author)

MIS field effect transistor with barium titanate thin film as a gate insulator

Energy Technology Data Exchange (ETDEWEB)

Firek, P., E-mail: pfirek@elka.pw.edu.p [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland); Werbowy, A.; Szmidt, J. [Institute of Microelectronics and Optoelectronics, Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw (Poland)

2009-11-25

The properties of barium titanate (BaTiO{sub 3}, BT) like, e.g. high dielectric constant and resistivity, allow it to find numerous applications in field of microelectronics. In this work silicon metal insulator semiconductor field effect transistor (MISFET) structures with BaTiO{sub 3} (containing La{sub 2}O{sub 3} admixture) thin films in a role of gate insulator were investigated. The films were produced by means of radio frequency plasma sputtering (RF PS) of sintered BaTiO{sub 3} + La{sub 2}O{sub 3} (2 wt.%) target. In the paper transfer and output current-voltage (I-V), transconductance and output conductance characteristics of obtained transistors are presented and discussed. Basic parameters of these devices like, e.g. threshold voltage (V{sub TH}), are determined and discussed.

Low temperature carrier transport study of monolayer MoS{sub 2} field effect transistors prepared by chemical vapor deposition under an atmospheric pressure

Energy Technology Data Exchange (ETDEWEB)

Liu, Xinke, E-mail: xkliu@szu.edu.cn, E-mail: wujing026@gmail.com; He, Jiazhu; Tang, Dan; Lu, Youming; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun [College of Materials Science and Engineering, Shenzhen Engineering Laboratory for Advanced Technology of Ceramics, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen 518060 (China); Liu, Qiang; Wen, Jiao; Yu, Wenjie [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai 200050 (China); Liu, Wenjun [State Key Laboratory of ASIC and System, Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai 200433 (China); Wu, Jing, E-mail: xkliu@szu.edu.cn, E-mail: wujing026@gmail.com [Department of Physics, National University of Singapore, 21 Lower Kent Ridge Road, 117576 Singapore (Singapore); He, Zhubing [Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen 518055 (China); Ang, Kah-Wee [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583 Singapore (Singapore)

2015-09-28

Large size monolayer Molybdenum disulphide (MoS{sub 2}) was successfully grown by chemical vapor deposition method under an atmospheric pressure. The electrical transport properties of the fabricated back-gate monolayer MoS{sub 2} field effect transistors (FETs) were investigated under low temperatures; a peak field effect mobility of 59 cm{sup 2}V{sup −1}s{sup −1} was achieved. With the assist of Raman measurement under low temperature, this work identified the mobility limiting factor for the monolayer MoS{sub 2} FETs: homopolar phonon scattering under low temperature and electron-polar optical phonon scattering at room temperature.

Reliability improvement of a-Si:H thin film transistors on plastic substrate with saturation in deep state after multiple bending cycles

International Nuclear Information System (INIS)

Lee, M.H.; Chen, P.-G.; Hsu, C.-C.

2013-01-01

For flexible electronic applications, the disordered bonds of a-Si:H may generate a redistribution of trapped states with mechanical strain. During mechanical strain, the deep states are redistributed in a Gaussian distribution and are dissimilar to ordinary acceptor-like deep states, which manifest with exponential distributions. The redistributed deep states may saturate with multiple mechanical bending cycles, and it would improve the reliability with drain current stress of a-Si:H TFTs (thin film transistors) on flexible substrates. We conclude that it is possible to produce low-cost and highly uniform active-matrix organic light emitting diodes systems for use in flexible display applications using a-Si:H TFTs array backplanes. - Highlights: • The stress stability of a-Si:H TFTs (thin-film transistors) was improved after bending cycles. • The saturated deep states after bending were confirmed. • The simulation and extracted gap state density of a-Si:H TFT under strain was calculated

Lifetime prediction of InGaZnO thin film transistor for the application of display device and BEOL-transistors

Science.gov (United States)

Kim, Sang Min; Cho, Won Ju; Yu, Chong Gun; Park, Jong Tae

2018-04-01

In this work, the lifetime prediction models of amorphous InGaZnO thin film transistors (a-IGZO TFTs) were suggested for the application of display device and BEOL (Back End Of line) transistors with embedded a-IGZO TFTs. Four different types of test devices according to the active layer thickness, source/drain electrode materials and thermal treatments have been used to verify the suggested model. The device lifetimes under high gate bias stress and hot carrier stress were extracted through fittings of the stretched-exponential equation for threshold voltage shifts and the current estimation method for drain current degradations. Our suggested lifetime prediction models could be used in any kinds of structures of a-IGZO TFTs for the application of display device and BEOL transistors. The a-IGZO TFTs with embedded ITO local conducting layer under source/drain is better for BEOL transistor application and a-IGZO TFTs with InGaZnO thin film as source/drain electrodes may be better for the application of display devices. From 1983 to 1985, he was a Researcher at Gold-Star Semiconductor, Inc., Korea, where he worked on the development of SRAM. He joined the Department of Electronics Engineering, University of Incheon, Incheon, Korea, in 1987, where he is a Professor. As a visiting scientist at Massachusetts Institute of Technology, Cambridge, in 1991, he conducted research in hot carrier reliability of CMOS. As a visiting scholar at University of California, Davis, in 2001, he conducted research on the device structure of Nano-scale SOI CMOS. His recent interests are device structure and reliability of Nano-scale CMOS devices, flash memory, and thin film transistors.

Spin-dependent transport properties of a GaMnAs-based vertical spin metal-oxide-semiconductor field-effect transistor structure

International Nuclear Information System (INIS)

Kanaki, Toshiki; Asahara, Hirokatsu; Ohya, Shinobu; Tanaka, Masaaki

2015-01-01

We fabricate a vertical spin metal-oxide-semiconductor field-effect transistor (spin-MOSFET) structure, which is composed of an epitaxial single-crystal heterostructure with a ferromagnetic-semiconductor GaMnAs source/drain, and investigate its spin-dependent transport properties. We modulate the drain-source current I DS by ∼±0.5% with a gate-source voltage of ±10.8 V and also modulate I DS by up to 60% with changing the magnetization configuration of the GaMnAs source/drain at 3.5 K. The magnetoresistance ratio is more than two orders of magnitude higher than that obtained in the previous studies on spin MOSFETs. Our result shows that a vertical structure is one of the hopeful candidates for spin MOSFET when the device size is reduced to a sub-micron or nanometer scale

Self-aligned metallization on organic semiconductor through 3D dual-layer thermal nanoimprint

International Nuclear Information System (INIS)

Jung, Y; Cheng, X

2014-01-01

High-resolution patterning of metal structures on organic semiconductors is important to the realization of high-performance organic transistors for organic integrated circuit applications. The traditional shadow mask technique has a limited resolution, precluding sub-micron metal structures on organic semiconductors. Thus organic transistors cannot benefit from scaling into the deep sub-micron region to improve their dc and ac performances. In this work, we report an efficient multiple-level metallization on poly (3-hexylthiophene) (P3HT) with a deep sub-micron lateral gap. By using a 3D nanoimprint mold in a dual-layer thermal nanoimprint process, we achieved self-aligned two-level metallization on P3HT. The 3D dual-layer thermal nanoimprint enables the first metal patterns to have suspending side-wings that can clearly define a distance from the second metal patterns. Isotropic and anisotropic side-wing structures can be fabricated through two different schemes. The process based on isotropic side-wings achieves a lateral-gap in the order of 100 nm (scheme 1). A gap of 60 nm can be achieved from the process with anisotropic side-wings (scheme 2). Because of the capability of nanoscale metal patterning on organic semiconductors with high overlay accuracy, this self-aligned metallization technique can be utilized to fabricate high-performance organic metal semiconductor field-effect transistor. (paper)

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

International Nuclear Information System (INIS)

Spathis, C.; Birbas, A.; Georgakopoulou, K.

2015-01-01

Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices

Semi-classical noise investigation for sub-40nm metal-oxide-semiconductor field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Spathis, C., E-mail: cspathis@ece.upatras.gr; Birbas, A.; Georgakopoulou, K. [Department of Electrical and Computer Engineering, University of Patras, Patras 26500 (Greece)

2015-08-15

Device white noise levels in short channel Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) dictate the performance and reliability of high-frequency circuits ranging from high-speed microprocessors to Low-Noise Amplifiers (LNAs) and microwave circuits. Recent experimental noise measurements with very short devices demonstrate the existence of suppressed shot noise, contrary to the predictions of classical channel thermal noise models. In this work we show that, as the dimensions continue to shrink, shot noise has to be considered when the channel resistance becomes comparable to the barrier resistance at the source-channel junction. By adopting a semi-classical approach and taking retrospectively into account transport, short-channel and quantum effects, we investigate the partitioning between shot and thermal noise, and formulate a predictive model that describes the noise characteristics of modern devices.

Toward selective electrochemical 'E-tongue': Potentiometric DO sensor based on sub-micron ZnO-RuO{sub 2} sensing electrode

Energy Technology Data Exchange (ETDEWEB)

Zhuiykov, Serge, E-mail: serge.zhuiykov@csiro.au [CSIRO, Materials Science and Engineering Division, 37 Graham Road, Highett, VIC 3190 (Australia); Kats, Eugene [CSIRO, Materials Science and Engineering Division, 37 Graham Road, Highett, VIC 3190 (Australia); Plashnitsa, Vladimir [Research and Education Centre of Carbon Resources, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan); Miura, Norio [KASTEC, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan)

2011-06-01

Highlights: > We examine ZnO-doped RuO{sub 2} sensing electrode of DO sensor. > Study of ZnO-RuO{sub 2} confirmed the development of high surface-to-volume ratio. > Developed sensing electrode is insensitive to the presence of various dissolved salts. > 20 mol% ZnO-doped RuO{sub 2} sensing electrode enables maximum DO sensitivity. > We conclude that DO sensor based on ZnO-RuO{sub 2} electrode can work at 11-30 deg. C. - Abstract: Planar dissolved oxygen (DO) sensors based on thick-film ZnO-RuO{sub 2} sensing electrodes (SEs) with different mol% of ZnO were prepared on the alumina substrates using a screen-printing method and their structural and electrochemical properties were closely studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX), electrochemical impedance spectroscopy (EIS) and energy-dispersive spectroscopy (EDS) techniques. Structural and electrochemical properties of ZnO-RuO{sub 2}-SEs have been investigated. Interference testing ascertained that the DO sensor based on sub-micron ZnO-RuO{sub 2}-SE is insensitive to the presence of various dissolved ions including Cl{sup -}, Li{sup +}, SO{sub 4}{sup 2-}, NO{sup 3-}, Ca{sup 2+}, PO{sub 4}{sup 3-}, Mg{sup 2+}, Na{sup +} and K{sup +} within a concentration range of 10{sup -7} to 10{sup -1} mol/L for DO measurement from 0.5 to 8.0 ppm in the test solution at a temperature range of 11-30 deg. C. These dissolved salts had practically no effect on the sensor's output potential difference response, whereas Br{sup -} ions had some effects at concentration more than 10{sup -3} mol/L. The relationship between DO and the sensor's potential difference was found to be relatively linear with the maximum sensitivity of -50.6 mV per decade was achieved at 20 mol% ZnO at 7.35 pH. The response and recovery time to pH changes for the planar device based on 20 mol% ZnO-RuO{sub 2}-SE was found to be 10 and 25 s

Characterisation of sub-micron particle number concentrations and formation events in the western Bushveld Igneous Complex, South Africa

Directory of Open Access Journals (Sweden)

A. Hirsikko

2012-05-01

Full Text Available South Africa holds significant mineral resources, with a substantial fraction of these reserves occurring and being processed in a large geological structure termed the Bushveld Igneous Complex (BIC. The area is also highly populated by informal, semi-formal and formal residential developments. However, knowledge of air quality and research related to the atmosphere is still very limited in the area. In order to investigate the characteristics and processes affecting sub-micron particle number concentrations and formation events, air ion and aerosol particle size distributions and number concentrations, together with meteorological parameters, trace gases and particulate matter (PM were measured for over two years at Marikana in the heart of the western BIC. The observations showed that trace gas (i.e. SO<sub>2sub>, NO<sub>x>, CO and black carbon concentrations were relatively high, but in general within the limits of local air quality standards. The area was characterised by very high condensation sink due to background aerosol particles, PM<sub>10sub> and O<sub>3sub> concentration. The results indicated that high amounts of Aitken and accumulation mode particles originated from domestic burning for heating and cooking in the morning and evening, while during daytime SO<sub>2sub>-based nucleation followed by the growth by condensation of vapours from industrial, residential and natural sources was the most probable source for large number concentrations of nucleation and Aitken mode particles. Nucleation event day frequency was extremely high, i.e. 86% of the analysed days, which to the knowledge of the authors is the highest frequency ever reported. The air mass back trajectory and wind direction analyses showed that the secondary particle formation was influenced both by local and regional pollution and vapour sources. Therefore, our observation of the annual cycle and magnitude of the particle formation and growth rates during

Investigations on field-effect transistors based on two-dimensional materials

Energy Technology Data Exchange (ETDEWEB)

Finge, T.; Riederer, F.; Grap, T.; Knoch, J. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Mueller, M.R. [Institute of Semiconductor Electronics, RWTH Aachen University (Germany); Infineon Technologies, Villach (Austria); Kallis, K. [Intelligent Microsystems Chair, TU Dortmund University (Germany)

2017-11-15

In the present article, experimental and theoretical investigations regarding field-effect transistors based on two-dimensional (2D) materials are presented. First, the properties of contacts between a metal and 2D material are discussed. To this end, metal-to-graphene contacts as well to transition metal dichalcogenides (TMD) are studied. Whereas metal-graphene contacts can be tuned with an appropriate back-gate, metal-TMD contacts exhibit strong Fermi level pinning showing substantially limited maximum possible drive current. Next, tungsten diselenide (WSe{sub 2}) field-effect transistors are presented. Employing buried-triple-gate substrates allows tuning source, channel and drain by applying appropriate gate voltages so that the device can be reconfigured to work as n-type, p-type and as so-called band-to-band tunnel field-effect transistor on the same WSe{sub 2} flake. (copyright 2017 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Design for ASIC reliability for low-temperature applications

Science.gov (United States)

Chen, Yuan; Mojaradi, Mohammad; Westergard, Lynett; Billman, Curtis; Cozy, Scott; Burke, Gary; Kolawa, Elizabeth

2005-01-01

In this paper, we present a methodology to design for reliability for low temperature applications without requiring process improvement. The developed hot carrier aging lifetime projection model takes into account both the transistor substrate current profile and temperature profile to determine the minimum transistor size needed in order to meet reliability requirements. The methodology is applicable for automotive, military, and space applications, where there can be varying temperature ranges. A case study utilizing this methodology is given to design for reliability into a custom application-specific integrated circuit (ASIC) for a Mars exploration mission.

Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Energy Technology Data Exchange (ETDEWEB)

Guo, Li Qiang, E-mail: guoliqiang@ujs.edu.cn; Ding, Jian Ning; Huang, Yu Kai [Micro/Nano Science & Technology Center, Jiangsu University, Zhenjiang, 212013 (China); Zhu, Li Qiang, E-mail: lqzhu@nimte.ac.cn [Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)

2015-08-15

Neuromorphic devices with paired pulse facilitation emulating that of biological synapses are the key to develop artificial neural networks. Here, phosphorus-doped nanogranular SiO{sub 2} electrolyte is used as gate dielectric for protonic/electronic hybrid indium gallium zinc oxide (IGZO) synaptic transistor. In such synaptic transistors, protons within the SiO{sub 2} electrolyte are deemed as neurotransmitters of biological synapses. Paired-pulse facilitation (PPF) behaviors for the analogous information were mimicked. The temperature dependent PPF behaviors were also investigated systematically. The results indicate that the protonic/electronic hybrid IGZO synaptic transistors would be promising candidates for inorganic synapses in artificial neural network applications.

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination

Science.gov (United States)

Chiu, Y. C.; Zheng, Z. W.; Cheng, C. H.; Chen, P. C.; Yen, S. S.; Fan, C. C.; Hsu, H. H.; Kao, H. L.; Chang, C. Y.

2017-03-01

The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the α-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of 70 mV/dec and high device mobility of >100 cm2/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.

Transistor Effect in Improperly Connected Transistors.

Science.gov (United States)

Luzader, Stephen; Sanchez-Velasco, Eduardo

1996-01-01

Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

Energy Technology Data Exchange (ETDEWEB)

Chen, Hua-Mao [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Tai, Ya-Hsiang [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chen, Kuan-Fu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chiang, Hsiao-Cheng [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Liu, Kuan-Hsien [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Lin, Wei-Ting; Cheng, Chun-Cheng; Tu, Chun-Hao; Liu, Chu-Yu [Advanced Technology Research Center, AU Optronics Corp, Hsinchu, Taiwan (China)

2015-11-30

This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiN{sub x} at low process/deposition temperature is better than that of SiO{sub x} at similarly low process/deposition temperature, there is still a very large positive threshold voltage (V{sub th}) shift of 9.4 V for devices with a single low-temperature SiN{sub x} gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a V{sub th} shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior. - Highlights: • The cause of the bias instability for a low-temperature gate insulator is verified. • A triple-stacked gate insulator was fabricated. • A suitable triple stacked gate insulator shows only 0.23 V threshold voltage shift.

Gadolinium oxide coated fully depleted silicon-on-insulator transistors for thermal neutron dosimetry

Energy Technology Data Exchange (ETDEWEB)

Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu; Gouker, Pascale M.

2013-09-01

Fully depleted silicon-on-insulator transistors coated with gadolinium oxide are shown to be effective thermal neutron dosimeters. The theoretical neutron detection efficiency is calculated to be higher for Gd{sub 2}O{sub 3} than for other practical converter materials. Proof-of-concept dosimeter devices were fabricated and tested during thermal neutron irradiation. The transistor current changes linearly with neutron dose, consistent with increasing positive charge in the SOI buried oxide layer generated by ionization from high energy {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. The measured neutron sensitivity is approximately 1/6 the maximum theoretical value, possibly due to electron–hole recombination or conversion electron loss in interconnect wiring above the transistors. -- Highlights: • A novel Gd{sub 2}O{sub 3} coated FDSOI MOSFET thermal neutron dosimeter is presented. • Dosimeter can detect charges generated from {sup 157}Gd(n,γ){sup 158}Gd conversion electrons. • Measured neutron sensitivity is comparable to that calculated theoretically. • Dosimeter requires zero power during operation, enabling new application areas.

Sub-cell turning to accomplish micron-level alignment of precision assemblies

Science.gov (United States)

Kumler, James J.; Buss, Christian

2017-08-01

Higher performance expectations for complex optical systems demand tighter alignment requirements for lens assembly alignment. In order to meet diffraction limited imaging performance over wide spectral bands across the UV and visible wavebands, new manufacturing approaches and tools must be developed if the optical systems will be produced consistently in volume production. This is especially applicable in the field of precision microscope objectives for life science, semiconductor inspection and laser material processing systems. We observe a rising need for the improvement in the optical imaging performance of objective lenses. The key challenge lies in the micron-level decentration and tilt of each lens element. One solution for the production of high quality lens systems is sub-cell assembly with alignment turning. This process relies on an automatic alignment chuck to align the optical axis of a mounted lens to the spindle axis of the machine. Subsequently, the mount is cut with diamond tools on a lathe with respect to the optical axis of the mount. Software controlled integrated measurement technology ensures highest precision. In addition to traditional production processes, further dimensions can be controlled in a very precise manner, e.g. the air gaps between the lenses. Using alignment turning simplifies further alignment steps and reduces the risk of errors. This paper describes new challenges in microscope objective design and manufacturing, and addresses difficulties with standard production processes. A new measurement and alignment technique is described, and strengths and limitations are outlined.

Development of Micron-Resolved Electron Spectroscopy to Study Organic Thin Films in Real Devices

International Nuclear Information System (INIS)

Wang, C.-H.; Fan, L.-J.; Yang, Y.-W.; Su, J.-W.; Chan, S.-W.; Chen, M.-C.

2010-01-01

A straightforward application of an electron energy analyzer equipped with an image detector to micron-resolved electron spectroscopic studies of organic thin film devices is reported. The electron spectroscopies implemented include synchrotron-based UPS, XPS, and Auger yield NEXAFS. Along the non-energy-dispersion direction of the analyzer, a spatial resolution of ∼40 μm is obtained through the employment of entrance slits, electrostatic lenses and segmented CCD detector. One significant benefit offered by the technique is that the electronic transport and electronic structure of the same micron-sized sample can be directly examined. The example illustrated is a top-contact organic field effect transistor (OFET) fabricated from semiconducting triethylsilylethynyl anthradithiophene and gold electrodes. It is found that an extensive out-diffusion of gold atoms to adjacent conduction channels takes place, presumably due to the inability of soft organic materials in dissipating the excess energy with which gaseous Au atoms possess.

Going ballistic: Graphene hot electron transistors

Science.gov (United States)

Vaziri, S.; Smith, A. D.; Östling, M.; Lupina, G.; Dabrowski, J.; Lippert, G.; Mehr, W.; Driussi, F.; Venica, S.; Di Lecce, V.; Gnudi, A.; König, M.; Ruhl, G.; Belete, M.; Lemme, M. C.

2015-12-01

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.

Micron scale spectroscopic analysis of materials

International Nuclear Information System (INIS)

James, David; Finlayson, Trevor; Prawer, Steven

1991-01-01

The goal of this proposal is the establishment of a facility which will enable complete micron scale spectroscopic analysis of any sample which can be imaged in the optical microscope. Current applications include studies of carbon fibres, diamond thin films, ceramics (zirconia and high T c superconductors), semiconductors, wood pulp, wool fibres, mineral inclusions, proteins, plant cells, polymers, fluoride glasses, and optical fibres. The range of interests crosses traditional discipline boundaries and augurs well for a truly interdisciplinary collaboration. Developments in instrumentation such as confocal imaging are planned to achieve sub-micron resolution, and advances in computer software and hardware will enable the aforementioned spectroscopies to be used to map molecular and crystalline phases on the surfaces of materials. Coupled with existing compositional microprobes (e.g. the proton microprobe) the possibilities for the development of new, powerful, hybrid imaging technologies appear to be excellent

SOI Transistor measurement techniques using body contacted transistors

International Nuclear Information System (INIS)

Worley, E.R.; Williams, R.

1989-01-01

Measurements of body contacted SOI transistors are used to isolate parameters of the back channel and island edge transistor. Properties of the edge and back channel transistor have been measured before and after X-ray irradiation (ARACOR). The unique properties of the edge transistor are shown to be a result of edge geometry as confirmed by a two dimensional transistor simulator

Enhanced two dimensional electron gas transport characteristics in Al{sub 2}O{sub 3}/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

Energy Technology Data Exchange (ETDEWEB)

Freedsman, J. J., E-mail: freedy54@gmail.com; Watanabe, A.; Urayama, Y. [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Egawa, T., E-mail: egawa.takashi@nitech.ac.jp [Research Center for Nano-Devices and Advanced Materials, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan); Innovation Center for Multi-Business of Nitride Semiconductors, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466 8555 (Japan)

2015-09-07

The authors report on Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor (MOS-HEMT) on Si fabricated by using atomic layer deposited Al{sub 2}O{sub 3} as gate insulator and passivation layer. The MOS-HEMT with the gate length of 2 μm exhibits excellent direct-current (dc) characteristics with a drain current maximum of 1270 mA/mm at a gate bias of 3 V and an off-state breakdown voltage of 180 V for a gate-drain spacing of 4 μm. Also, the 1 μm-gate MOS-HEMT shows good radio-frequency (rf) response such as current gain and maximum oscillation cut-off frequencies of 10 and 34 GHz, respectively. The capacitance-voltage characteristics at 1 MHz revealed significant increase in two-dimensional electron gas (2DEG) density for the MOS-HEMT compared to conventional Schottky barrier HEMTs. Analyses using drain-source conductivity measurements showed improvements in 2DEG transport characteristics for the MOS-HEMT. The enhancements in dc and rf performances of the Al{sub 2}O{sub 3}/Al{sub 0.85}In{sub 0.15}N/GaN MOS-HEMT are attributed to the improvements in 2DEG characteristics.

High Reliability Prototype Quadrupole for the Next Linear Collider

International Nuclear Information System (INIS)

Spencer, Cherrill M

2001-01-01

The Next Linear Collider (NLC) will require over 5600 magnets, each of which must be highly reliable and/or quickly repairable in order that the NLC reach its 85% overall availability goal. A multidiscipline engineering team was assembled at SLAC to develop a more reliable electromagnet design than historically had been achieved at SLAC. This team carried out a Failure Mode and Effects Analysis (FMEA) on a standard SLAC quadrupole magnet system. They overcame a number of longstanding design prejudices, producing 10 major design changes. This paper describes how a prototype magnet was constructed and the extensive testing carried out on it to prove full functionality with an improvement in reliability. The magnet's fabrication cost will be compared to the cost of a magnet with the same requirements made in the historic SLAC way. The NLC will use over 1600 of these 12.7 mm bore quadrupoles with a range of integrated strengths from 0.6 to 132 Tesla, a maximum gradient of 135 Tesla per meter, an adjustment range of 0 to -20% and core lengths from 324 mm to 972 mm. The magnetic center must remain stable to within 1 micron during the 20% adjustment. A magnetic measurement set-up has been developed that can measure sub-micron shifts of a magnetic center. The prototype satisfied the center shift requirement over the full range of integrated strengths

Electrically programmable-erasable In-Ga-Zn-O thin-film transistor memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack

Energy Technology Data Exchange (ETDEWEB)

Qian, Shi-Bing; Zhang, Wen-Peng; Liu, Wen-Jun; Ding, Shi-Jin, E-mail: sjding@fudan.edu.cn [State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433 (China)

2015-12-15

Amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) memory is very promising for transparent and flexible system-on-panel displays; however, electrical erasability has always been a severe challenge for this memory. In this article, we demonstrated successfully an electrically programmable-erasable memory with atomic-layer-deposited Al{sub 2}O{sub 3}/Pt nanocrystals/Al{sub 2}O{sub 3} gate stack under a maximal processing temperature of 300 {sup o}C. As the programming voltage was enhanced from 14 to 19 V for a constant pulse of 0.2 ms, the threshold voltage shift increased significantly from 0.89 to 4.67 V. When the programmed device was subjected to an appropriate pulse under negative gate bias, it could return to the original state with a superior erasing efficiency. The above phenomena could be attributed to Fowler-Nordheim tunnelling of electrons from the IGZO channel to the Pt nanocrystals during programming, and inverse tunnelling of the trapped electrons during erasing. In terms of 0.2-ms programming at 16 V and 350-ms erasing at −17 V, a large memory window of 3.03 V was achieved successfully. Furthermore, the memory exhibited stable repeated programming/erasing (P/E) characteristics and good data retention, i.e., for 2-ms programming at 14 V and 250-ms erasing at −14 V, a memory window of 2.08 V was still maintained after 10{sup 3} P/E cycles, and a memory window of 1.1 V was retained after 10{sup 5} s retention time.

Transistor data book

International Nuclear Information System (INIS)

1988-03-01

It introduces how to use this book. It lists transistor data and index, which are Type No, Cross index, Germanium PNP low power transistors, silicon NPN low power transistors, Germanium PNP high power transistors, Switching transistors, transistor arrays, Miscellaneous transistors, types with U.S military specifications, direct replacement transistors, suggested replacement transistors, schematic drawings, outline drawings, device number keys and manufacturer's logos.

Performance improvement inpolymer-based thin film transistor using modified bottom-contact structures with etched SiO{sub 2} layers

Energy Technology Data Exchange (ETDEWEB)

Park, Jeong Woo [R and D Center, Samsung Corning Precision Materials Co., Ltd, Asan (Korea, Republic of); You, Young Jun; Shim, Jae Won [Dept. of Electronics and Electrical Engineering, Dongguk University-Seoul, Seoul (Korea, Republic of)

2017-02-15

Polymer-based thin film transistors (TFTs) with a modified bottom-contact structure and etched SiO{sub 2} layer were developed and investigated. An increase in the field-effect mobility in the developed TFTs compared to TFTs with a normal bottom-contact structure was ascertained. A bottom-contact structure and the photolithographic processing method were used to ensure that the developed TFTs were suitable for commercial applications. Increased mobility of the modified bottom-contact structure was attributed to direct contact of the Au electrode with the active polymer layer.

Radiation tolerance of Si{sub 1−y}C{sub y} source/drain n-type metal oxide semiconductor field effect transistors with different carbon concentrations

Energy Technology Data Exchange (ETDEWEB)

Nakashima, Toshiyuki, E-mail: nakashima_t@cdk.co.jp [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan); Chuo Denshi Kogyo Co., Ltd., 3400 Kohoyama, Matsubase, Uki, Kumamoto (Japan); Asai, Yuki; Hori, Masato; Yoneoka, Masashi; Tsunoda, Isao; Takakura, Kenichiro [Kumamoto National College of Technology, 2659-2 Suya, Koshi, Kumamoto 861-1102 (Japan); Gonzalez, Mireia Bargallo [Institut de Microelectronica de Barcelona (Centre Nacional de Microelectronica — Consejo Superior de Investigaciones Cientificas) Campus UAB, 08193 Bellaterra (Spain); Simoen, Eddy [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Claeys, Cor [imec, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Electrical Engineering, KU Leuven, Kasteelpark Arenberg 10, B-3001 Leuven (Belgium); Yoshino, Kenji [Interdisciplinary Graduate School of Agriculture and Engineering, University of Miyazaki, 1-1 Gakuen Kibanadai-nishi, Miyazaki (Japan)

2014-04-30

The 2-MeV electron radiation damage of silicon–carbon source/drain (S/D) n-type metal oxide semiconductor field effect transistors with different carbon (C) concentrations is studied. Before irradiation, an enhancement of the electron mobility with C concentration of the S/D stressors is clearly observed. On the other hand, after electron irradiation, both the threshold voltage shift and the maximum electron mobility degradation are independent on the C concentration for all electron fluences studied. These results indicate that the strain induced electron mobility enhancement due to the C doping is retained after irradiation in the studied devices. - Highlights: • We have investigated the electron irradiation effect of the Si{sub 1−y}C{sub y} S/D n-MOSFETs. • The threshold voltage variations by irradiation are independent on the C doping. • The electron-mobility decreased for all C concentrations by electron irradiation. • The strain induced mobility enhancement effect is retained after irradiation.

Experimental study on reactor neutron induced effect of deep sub-micron CMOS static random access memory

International Nuclear Information System (INIS)

Yang Shanchao; Guo Xiaoqiang; Lin Dongsheng; Chen Wei; Li Ruibin; Bai Xiaoyan; Wang Guizhen

2010-01-01

This paper investigates neutron irradiation effects of two kinds of commercial CMOS SRAM (static random access memory), of which one is 4M memory with the feature size of 0.25 μm and the other is 16M memory with the feature size of 0.13 μm. We designed a memory testing system of irradiation effects and performed the neutron irradiation experiment using the Xi'an Pulse Reactor. The upset of two kinds of memory cells did not present a threshold versus the increase of neutron fluence. The results showed that deep sub-micron SRAM behaved single-event upset (SEU) effect in neutron irradiation environment. The SEU effect of SRAM with smaller size and higher integrated level tends to upset is considered to be related to the reduction of the device feature size, and fewer charges for upsets of the memory cell also lead to the SEU effect. (authors)

Resonant Tunneling in Gated Vertical One- dimensional Structures

Science.gov (United States)

Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Webb, K. J.

1997-03-01

Vertical sub-micron transistors incorporating resonant tunneling multiple quantum well heterostructures are interesting in applications for both multi-valued logic devices and the study of quantization effects in vertical quasi- one-, zero- dimensional structures. Earlier we have demonstrated room temperature pinch-off of the resonant peak in sub-micron vertical resonant tunneling transistors structures using a self-aligned sidewall gating technique ( V.R. Kolagunta et. al., Applied Physics Lett., 69), 374(1996). In this paper we present the study of gating effects in vertical multiple quantum well resonant tunneling transistors. Multiple well quasi-1-D sidewall gated transistors with mesa dimensions of L_x=0.5-0.9μm and L_y=10-40μm were fabricated. The quantum heterostructure in these devices consists of two non-symmetric (180 ÅÅi-GaAs wells separated from each other and from the top and bottom n^+ GaAs/contacts region using Al_0.3Ga_0.7As tunneling barriers. Room temperature pinch-off of the multiple resonant peaks similar to that reported in the case of single well devices is observed in these devices^1. Current-voltage characteristics at liquid nitrogen temperatures show splitting of the resonant peaks into sub-bands with increasing negative gate bias indicative of quasi- 1-D confinement. Room-temperature and low-temperature current-voltage measurements shall be presented and discussed.

Tin Dioxide Electrolyte-Gated Transistors Working in Depletion and Enhancement Modes.

Science.gov (United States)

Valitova, Irina; Natile, Marta Maria; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2017-10-25

Metal oxide semiconductors are interesting for next-generation flexible and transparent electronics because of their performance and reliability. Tin dioxide (SnO 2 ) is a very promising material that has already found applications in sensing, photovoltaics, optoelectronics, and batteries. In this work, we report on electrolyte-gated, solution-processed polycrystalline SnO 2 transistors on both rigid and flexible substrates. For the transistor channel, we used both unpatterned and patterned SnO 2 films. Since decreasing the SnO 2  area in contact with the electrolyte increases the charge-carrier density, patterned transistors operate in the depletion mode, whereas unpatterned ones operate in the enhancement mode. We also fabricated flexible SnO 2 transistors that operate in the enhancement mode that can withstand moderate mechanical bending.

Comparative analysis of the effects of tantalum doping and annealing on atomic layer deposited (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} as potential gate dielectrics for GaN/Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Partida-Manzanera, T., E-mail: sgtparti@liv.ac.uk [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore); Roberts, J. W.; Sedghi, N.; Potter, R. J. [Centre for Materials and Structures, School of Engineering, University of Liverpool, Liverpool, L69 3GH (United Kingdom); Bhat, T. N.; Zhang, Z.; Tan, H. R.; Dolmanan, S. B.; Tripathy, S. [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Innovis, 2 Fusionopolis way, Singapore 138634 (Singapore)

2016-01-14

This paper describes a method to optimally combine wide band gap Al{sub 2}O{sub 3} with high dielectric constant (high-κ) Ta{sub 2}O{sub 5} for gate dielectric applications. (Ta{sub 2}O{sub 5}){sub x}(Al{sub 2}O{sub 3}){sub 1−x} thin films deposited by thermal atomic layer deposition (ALD) on GaN-capped Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistor (HEMT) structures have been studied as a function of the Ta{sub 2}O{sub 5} molar fraction. X-ray photoelectron spectroscopy shows that the bandgap of the oxide films linearly decreases from 6.5 eV for pure Al{sub 2}O{sub 3} to 4.6 eV for pure Ta{sub 2}O{sub 5}. The dielectric constant calculated from capacitance-voltage measurements also increases linearly from 7.8 for Al{sub 2}O{sub 3} up to 25.6 for Ta{sub 2}O{sub 5}. The effect of post-deposition annealing in N{sub 2} at 600 °C on the interfacial properties of undoped Al{sub 2}O{sub 3} and Ta-doped (Ta{sub 2}O{sub 5}){sub 0.12}(Al{sub 2}O{sub 3}){sub 0.88} films grown on GaN-HEMTs has been investigated. These conditions are analogous to the conditions used for source/drain contact formation in gate-first HEMT technology. A reduction of the Ga-O to Ga-N bond ratios at the oxide/HEMT interfaces is observed after annealing, which is attributed to a reduction of interstitial oxygen-related defects. As a result, the conduction band offsets (CBOs) of the Al{sub 2}O{sub 3}/GaN-HEMT and (Ta{sub 2}O{sub 5}){sub 0.16}(Al{sub 2}O{sub 3}){sub 0.84}/GaN-HEMT samples increased by ∼1.1 eV to 2.8 eV and 2.6 eV, respectively, which is advantageous for n-type HEMTs. The results demonstrate that ALD of Ta-doped Al{sub 2}O{sub 3} can be used to control the properties of the gate dielectric, allowing the κ-value to be increased, while still maintaining a sufficient CBO to the GaN-HEMT structure for low leakage currents.

The evaluation of microstructure and mechanical properties of sintered sub-micron WC-Co powders

International Nuclear Information System (INIS)

Nor Izan Izura; Mohd Asri Selamat; Noraizham Mohamad Diah; Talib Ria Jaafar

2007-01-01

A cemented tungsten carbide (WC-Co) is widely used for a variety of machining, cutting, drilling and other applications. The properties of this tungsten heavy alloy are sensitive to processing and degraded by residual porosity. The sequence of high end powder metallurgy process include mixing, compacting and followed by multi-atmosphere sintering of green compact were analyzed. The sub micron (<1.0 μm) and less than 10.0 μm of WC powders are sintered with a metal binder 6% Co to provide pore-free part. The powder compacts were sintered at temperatures cycle in the range of 1200 degree Celsius-1550 degree Celsius in nitrogen-based sintering atmosphere. To date, however there have been few reported studies in the literature that the best sintering was carried out via liquid phase sintering in vacuum at approximately 1500 degree Celsius. from this study we found that in order to attain high mechanical properties, a fine grain size of powder is necessary. Therefore, the attention of this work is to develop and produce wear resistant component with better properties or comparable to the commercial ones. (author)

High current transistor pulse generator

International Nuclear Information System (INIS)

Nesterov, V.; Cassel, R.

1991-05-01

A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

Energy Technology Data Exchange (ETDEWEB)

Zhang, Nan; Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn; Lin, Jie; Li, Yantao; Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

2016-08-08

A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

High Power Narrow Linewidth 1.26 Micron Ho-Doped Fiber Amplifier, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This proposal is for the development of an innovative, high power, and extremely reliable 1.26-micron Ho-doped fluoride fiber amplifier. The proposed fiber amplifier...

Densification effects on solution-processed indium-gallium-zinc-oxide films and their thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Rim, You Seung; Kim, Hyun Jae [School of Electrical and Electronic Engineering, Yonsei University, Seoul (Korea, Republic of)

2014-09-15

We report the effects of high-pressure annealing (HPA) on solution-processed InGaZnO (IGZO) thin-film transistors (TFTs). HPA increased the density of IGZO films. In particular, annealing in O{sub 2} at 1.0 MPa and 350 C resulted in a high-density and low-porosity IGZO film, as characterized using X-ray reflectivity (XRR) and ellipsometry measurements. This was attributed to the oxidative and compressive effects on the oxygen-deficient solution-processed IGZO film. TFTs annealed in O{sub 2} at 1.0 MPa and 350 C exhibited an increase in the field-effect mobility by a factor of approximately five compared with TFTs annealed in air at 0.1 MPa and 350 C. Furthermore, improvements in reliability under negative and positive bias stresses were also observed following HPA. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

Science.gov (United States)

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

Science.gov (United States)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, Subhash

1999-01-01

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Standing spin-wave mode structure and linewidth in partially disordered hexagonal arrays of perpendicularly magnetized sub-micron Permalloy discs

International Nuclear Information System (INIS)

Ross, N.; Kostylev, M.; Stamps, R. L.

2014-01-01

Standing spin wave mode frequencies and linewidths in partially disordered perpendicular magnetized arrays of sub-micron Permalloy discs are measured using broadband ferromagnetic resonance and compared to analytical results from a single, isolated disc. The measured mode structure qualitatively reproduces the structure expected from the theory. Fitted demagnetizing parameters decrease with increasing array disorder. The frequency difference between the first and second radial modes is found to be higher in the measured array systems than predicted by theory for an isolated disc. The relative frequencies between successive spin wave modes are unaffected by reduction of the long-range ordering of discs in the array. An increase in standing spin wave resonance linewidth at low applied magnetic fields is observed and grows more severe with increased array disorder.

Growth Of Organic Semiconductor Thin Films with Multi-Micron Domain Size and Fabrication of Organic Transistors Using a Stencil Nanosieve.

Science.gov (United States)

Fesenko, Pavlo; Flauraud, Valentin; Xie, Shenqi; Kang, Enpu; Uemura, Takafumi; Brugger, Jürgen; Genoe, Jan; Heremans, Paul; Rolin, Cédric

2017-07-19

To grow small molecule semiconductor thin films with domain size larger than modern-day device sizes, we evaporate the material through a dense array of small apertures, called a stencil nanosieve. The aperture size of 0.5 μm results in low nucleation density, whereas the aperture-to-aperture distance of 0.5 μm provides sufficient crosstalk between neighboring apertures through the diffusion of adsorbed molecules. By integrating the nanosieve in the channel area of a thin-film transistor mask, we show a route for patterning both the organic semiconductor and the metal contacts of thin-film transistors using one mask only and without mask realignment.

Observing the semiconducting band-gap alignment of MoS{sub 2} layers of different atomic thicknesses using a MoS{sub 2}/SiO{sub 2}/Si heterojunction tunnel diode

Energy Technology Data Exchange (ETDEWEB)

Nishiguchi, Katsuhiko, E-mail: nishiguchi.katsuhiko@lab.ntt.co.jp; Yamaguchi, Hiroshi; Fujiwara, Akira [NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan); Castellanos-Gomez, Andres; Zant, Herre S. J. van der; Steele, Gary A. [Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands)

2015-08-03

We demonstrate a tunnel diode composed of a vertical MoS{sub 2}/SiO{sub 2}/Si heterostructure. A MoS{sub 2} flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS{sub 2} layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS{sub 2} layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

In-situ study of pn-heterojunction interface states in organic thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Ye, Rongbin, E-mail: ye@iwate-u.ac.jp; Ohta, Koji; Baba, Mamoru

2014-03-03

In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V{sub T}) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V{sub T} undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V{sub T} shift is attributed to the increase of drain current in the sandwich device. In order to explain the V{sub T} shift, a model was assumed in the linear region of thin film transistor operation and the V{sub T} shift agrees with a tan{sup −1} function of film thickness. The total charge density (Q{sub 0}) of 1.53 × 10{sup −7} C/cm{sup 2} (9.56 × 10{sup 11} electrons or holes/cm{sup 2}) was obtained. Furthermore, the V{sub T} shift and Q{sub 0} could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed.

Characterization of Si sub 1 sub - sub x Ge sub x thin films prepared by sputtering

CERN Document Server

Noguchi, T

2000-01-01

By bombarding solid targets, we deposited Si sub 1 sub - sub x Ge sub x thin films by sputtering without using inflammable CVD (chemical vapor deposition) gases. After the B sup + -implanted Si sub 1 sub - sub x Ge sub x films were thermally annealed, they were characterized. As the content of Ge increased, the refractive index increased and the band edge narrowed. The higher the annealing temperature, the lower the resistivity. For Si sub 1 sub - sub x Ge sub x films with a high Ge content (X approx 0.5), the flat-band voltage of the gate deduced from C-V curve was adjusted to the middle point between p sup + and n sup + polySi gates. Boron-doped SiGe films are promising gate materials for MOS (metal oxide semiconductor) and SOI (silicon on insulator) transistors driven at low driving voltage.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Current-Induced Transistor Sensorics with Electrogenic Cells

Directory of Open Access Journals (Sweden)

Peter Fromherz

2016-04-01

Full Text Available The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned.

Dense plasma focus x-ray source for sub-micron lithography

International Nuclear Information System (INIS)

Prasad, R.R.; Krishnan, M.; Mangano, J.; Greene, P.; Qi, Niansheng

1993-01-01

A discharge driven, dense plasma focus in neon is under development at SRL for use as a point x-ray source for sub-micron lithography. This source is presently capable of delivering ∼ 13j/pulse of neon K-shell x-rays (8--14 angstrom) into 4π steradians with 2 kj of electrical energy stored in the capacitor bank charged to 9 kV at a pulse repetition rate of 2 Hz. The discharge is produced by a ≤4 kj, ≤12 kV, capacitor bank circuit, which has a fixed inductance of 12 nH and drives ≤450 kA currents into the DPF load, with ∼1.1 μs rise-times. X-rays are produced when a dense pinch of neon is formed along the axis of the DPF electrodes. A new rail-gap switched capacitor bank and DPF have been built, designed for continuous operation at 2 Hz and burst mode operation at 20 Hz. This paper will present measurements of the x-ray output at a repetition rate of 2 Hz using the new capacitor bank. It will also describe measurements of the spot size (0.3--0.8 mm) and the spectrum (8--14 angstrom) of the DPF source. The dependence of these parameters on the DPF head geometry, bank energy and operating pressure will be discussed. The x-ray output has been measured using filtered pin diodes, x-ray diodes, and absolutely calibrated x-ray crystal spectra. Results from the source operating at 2 Hz will be presented. A novel concept of a windowless beamline has also been developed. The results of preliminary experiments to test the concept will be discussed. At a pulse repetition rate of 20 Hz, this source should produce 200--400 W of x-ray power in the 8-14 angstrom wavelength band, with an input power of 40--60 kW

Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

Science.gov (United States)

Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

2003-01-01

SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

An examination of the shrinking-core model of sub-micron aluminum combustion

Science.gov (United States)

Buckmaster, John; Jackson, Thomas L.

2013-04-01

We revisit the shrinking-core model of sub-micron aluminum combustion with particular attention to the mass flux balance at the reaction front which necessarily leads to a displacement velocity of the alumina shell surrounding the liquid aluminum. For the planar problem this displacement simply leads to an equal displacement of the entire alumina layer, and therefore a straightforward mathematical framework can be constructed. In this way we are able to construct a single curve which defines the burn time for arbitrary values of the diffusion coefficient of O atoms, the reaction rate, the characteristic length of the combustion field, and the O atom mass concentration within the alumina provided that it is much smaller than the aluminum density. This demonstrates a transition between a 'd 2-t' law for fast chemistry and a 'd-t' law for slow chemistry. For the spherical geometry, the one of physical interest, the outward displacement velocity creates not a simple displacement, but a stress field which, when examined within the framework of linear elasticity, strongly suggests the creation of internal cracking. We note that if the molten aluminum is pushed into these cracks by the high internal pressure characteristic of the stress field, its surface, where reaction occurs, could be fractal in nature and affect the fundamental nature of the burning law. Indeed, if this ingredient is added to the planar model, a single curve for the burn time can again be derived, and this describes a transition from a 'd 2-t' law to a 'd ν-t' law, where 0<ν<1.

Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Kyaw, L. M., E-mail: a0048661@nus.edu.sg [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore); Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Bera, L. K.; Dolmanan, S. B.; Tan, H. R.; Bhat, T. N.; Tripathy, S., E-mail: tripathy-sudhiranjan@imre.a-star.edu.sg [Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology, and Research), Singapore 117602 (Singapore); Liu, Y.; Bera, M. K.; Singh, S. P.; Chor, E. F. [Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576 (Singapore)

2014-08-18

Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

Mercury(II) selective sensors based on AlGaN/GaN transistors

Energy Technology Data Exchange (ETDEWEB)

Asadnia, Mohsen, E-mail: mohsen.asadnia@mq.edu.au [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Department of Engineering, Macquarie University, NSW 2109 (Australia); Myers, Matthew [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); CSIRO Energy Flagship, Kensington, Western Australia 6151 (Australia); Akhavan, N.D. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); O' Donnell, Kane [Department of Imaging and Applied Physics, Curtin University, Bentley, Western Australia 6102 (Australia); Umana-Membreno, Gilberto A. [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Mishra, U.K. [Electrical and Computer Engineering Department, University of California, Santa Barbara, CA 93106 (United States); Nener, Brett [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Baker, Murray [School of Chemistry and Biochemistry, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia); Parish, Giacinta [School of Electrical, Electronic and Computer Engineering, The University of Western Australia, 35 Stirling Hwy., Crawley, Western Australia 6009 (Australia)

2016-11-02

This work presents the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. The sensor utilised an AlGaN/GaN high electron mobility transistor-type structure by functionalising the gate area with a polyvinyl chloride (PVC) based ion selective membrane. Sensors based on this technology are portable, robust and typically highly sensitive to the target analyte; in this case Hg{sup 2+}. This sensor showed a rapid and stable response when it was introduced to solutions of varying Hg{sup 2+} concentrations. At pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer, a detection limit below 10{sup −8} M and a linear response range between 10{sup −8} M-10{sup −4} M were achieved. This detection limit is an order of magnitude lower than the reported detection limit of 10{sup −7} M for thioglycolic acid monolayer functionalised AlGaN/GaN HEMT devices. Detection limits of approximately 10{sup −7} M and 10{sup −6} M in 10{sup −2} M Cd(NO{sub 3}){sub 2} and 10{sup −2} M Pb(NO{sub 3}){sub 2} ion buffers were also achieved, respectively. Furthermore, we show that the apparent gate response was near-Nernstian under various conditions. X-ray photoelectron spectroscopy (XPS) experiments confirmed that the sensing membrane is reversible after being exposed to Hg{sup 2+} solution and rinsed with deionised water. The success of this study precedes the development of this technology in selectively sensing multiple ions in water with use of the appropriate polymer based membranes on arrays of devices. - Highlights: • This work is the first polymer approach to detect metal ions using AlGaN/GaN transistor-based sensor. • The sensor utilised an AlGaN/GaN transistor by functionalising the gate area with a polyvinyl chloride (PVC) based membrane. • The sensor showed a rapid and linear response between 10{sup −8} M-10{sup −4} M for Hg{sup 2+} detection at pH 2.8 in a 10{sup −2} M KNO{sub 3} ion buffer. • Detection limits of

Prospects for sub-micron solid state nuclear magnetic resonance imaging with low-temperature dynamic nuclear polarization.

Science.gov (United States)

Thurber, Kent R; Tycko, Robert

2010-06-14

We evaluate the feasibility of (1)H nuclear magnetic resonance (NMR) imaging with sub-micron voxel dimensions using a combination of low temperatures and dynamic nuclear polarization (DNP). Experiments are performed on nitroxide-doped glycerol-water at 9.4 T and temperatures below 40 K, using a 30 mW tunable microwave source for DNP. With DNP at 7 K, a 0.5 microL sample yields a (1)H NMR signal-to-noise ratio of 770 in two scans with pulsed spin-lock detection and after 80 db signal attenuation. With reasonable extrapolations, we infer that (1)H NMR signals from 1 microm(3) voxel volumes should be readily detectable, and voxels as small as 0.03 microm(3) may eventually be detectable. Through homonuclear decoupling with a frequency-switched Lee-Goldburg spin echo technique, we obtain 830 Hz (1)H NMR linewidths at low temperatures, implying that pulsed field gradients equal to 0.4 G/d or less would be required during spatial encoding dimensions of an imaging sequence, where d is the resolution in each dimension.

Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate

Energy Technology Data Exchange (ETDEWEB)

Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian; Cao, Mingxuan; Zhang, Guizhong; Yao, Jianquan [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); Cao, Xiaolong [Institute of Laser and Opto-Electronics, College of Precision Instruments and Opto-Electronics Engineering, Tianjin University, Tianjin 300072 (China); Key Laboratory of Opto-Electronics Information Technology, Ministry of Education, Tianjin University, Tianjin 300072 (China); College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590 (China); Dai, Haitao [Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, School of Science, Tianjin University, Tianjin 300072 (China); Yang, Junbo [Center of Material Science, National University of Defense Technology, Changsha 410073 (China)

2016-07-04

Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th} was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.

On the sub-micron aerosol size distribution in a coastal-rural site at El Arenosillo Station (SW – Spain

Directory of Open Access Journals (Sweden)

M. Sorribas

2011-11-01

Full Text Available This study focuses on the analysis of the sub-micron aerosol characteristics at El Arenosillo Station, a rural and coastal environment in South-western Spain between 1 August 2004 and 31 July 2006 (594 days. The mean total concentration (N<sub>T> was 8660 cm⁻³ and the mean concentrations in the nucleation (N<sub>NUC>, Aitken (N<sub>AIT> and accumulation (N<sub>ACC> particle size ranges were 2830 cm⁻³, 4110 cm⁻³ and 1720 cm⁻³, respectively. Median size distribution was characterised by a single-modal fit, with a geometric diameter, median number concentration and geometric standard deviation of 60 nm, 5390 cm⁻³ and 2.31, respectively. Characterisation of primary emissions, secondary particle formation, changes to meteorology and long-term transport has been necessary to understand the seasonal and annual variability of the total and modal particle concentration. Number concentrations exhibited a diurnal pattern with maximum concentrations around noon. This was governed by the concentrations of the nucleation and Aitken modes during the warm seasons and only by the nucleation mode during the cold seasons. Similar monthly mean total concentrations were observed throughout the year due to a clear inverse variation between the monthly mean N<sub>NUC> and N<sub>ACC>. It was related to the impact of desert dust and continental air masses on the monthly mean particle levels. These air masses were associated with high values of N<sub>ACC> which suppressed the new particle formation (decreasing N<sub>NUC>. Each day was classified according to a land breeze flow or a synoptic pattern influence. The median size distribution for desert dust and continental aerosol was dominated by the Aitken and accumulation modes, and marine air masses were dominated by the nucleation and Aitken modes. Particles

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Doped Organic Transistors.

Science.gov (United States)

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

Spin effects in high- and low-field magnetotransport experiments in semimagnetic Cd{sub 1-x}Mn{sub x}Te heterostructures

Energy Technology Data Exchange (ETDEWEB)

Betthausen, Christian

2012-07-09

Within the framework of this PhD we report on the very first observation of the fractional Quantum Hall Effect (FQHE) in both, a non-magnetic CdTe and a semimagnetic Cd{sub 1-x}Mn{sub x}Te quantum well device. To our knowledge, this constitutes the first demonstration of this effect in the II-VI material family. Furthermore, our results reveal that the formation of fractional Quantum Hall states is not inhibited by the presence of magnetic impurities in a quantum structure. The second part of this thesis addresses an alternative route to realize efficient spin transistor action. Typically, spin transistor designs relying on spin-orbit interaction principally suffer from low signal levels due to limitations in spin injection efficiency and fast spin decay. Here we present an approach to realize spin transistor action in systems where spin information is protected by propagating it adiabatically. This is achieved by inducing tunable diabatic Landau-Zener transitions that lead to a backscattering of spins and hence allow controlling the transmission of spin-polarized charge carriers through the device, i.e. switching between 'on' and 'off' states. We demonstrate the validity of our approach in a Cd{sub 1-x}Mn{sub x}Te diluted magnetic semiconductor quantum well structure where efficient spin transport is observed over device distances of 50 {mu}m. In contrast to other spin transistor designs we find that our concept is exceptionally tolerant against disorder.

Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

Energy Technology Data Exchange (ETDEWEB)

Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

2016-07-04

This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

Patterning solution-processed organic single-crystal transistors with high device performance

Directory of Open Access Journals (Sweden)

Yun Li

2011-06-01

Full Text Available We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μFET of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μFET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher μFET with smaller variation can be expected when lower and more uniform contact resistance is achieved.

Time-specific measurements of energy deposition from radiation fields in simulated sub-micron tissue volumes

International Nuclear Information System (INIS)

Famiano, M.A.

1997-01-01

A tissue-equivalent spherical proportional counter is used with a modified amplifier system to measure specific energy deposited from a uniform radiation field for short periods of time (∼1 micros to seconds) in order to extrapolate to dose in sub-micron tissue volumes. The energy deposited during these time intervals is compared to biological repair processes occurring within the same intervals after the initial energy deposition. The signal is integrated over a variable collection time which is adjusted with a square-wave pulse. Charge from particle passages is collected on the anode during the period in which the integrator is triggered, and the signal decays quickly to zero after the integrator feedback switch resets; the process repeats for every triggering pulse. Measurements of energy deposited from x rays, 137 Cs gamma rays, and electrons from a 90 Sr/ 90 Y source for various time intervals are taken. Spectral characteristics as a function of charge collection time are observed and frequency plots of specific energy and collection time-interval are presented. In addition, a threshold energy flux is selected for each radiation type at which the formation of radicals (based on current measurements) in mammalian cells equals the rate at which radicals are repaired

Suppression of photo-bias induced instability for amorphous indium tungsten oxide thin film transistors with bi-layer structure

Energy Technology Data Exchange (ETDEWEB)

Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw; Chang, Chih-Hsiang; Chang, Chih-Jui [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

2016-06-27

This study investigates the instability induced by bias temperature illumination stress (NBTIS) for an amorphous indium-tungsten-oxide thin film transistor (a-IWO TFT) with SiO{sub 2} backchannel passivation layer (BPL). It is found that this electrical degradation phenomenon can be attributed to the generation of defect states during the BPL process, which deteriorates the photo-bias stability of a-IWO TFTs. A method proposed by adding an oxygen-rich a-IWO thin film upon the a-IWO active channel layer could effectively suppress the plasma damage to channel layer during BPL deposition process. The bi-layer a-IWO TFT structure with an oxygen-rich back channel exhibits superior electrical reliability of device under NBTIS.

Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

Energy Technology Data Exchange (ETDEWEB)

Seo, M.; Kim, H.; Kim, Y. H.; Yun, H.; McAllister, K.; Lee, S. W., E-mail: leesw@konkuk.ac.kr [Division of Quantum Phases and Devices, School of Physics, Konkuk University, Seoul 143-701 (Korea, Republic of); Na, J.; Kim, G. T. [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Lee, B. J.; Kim, J. J.; Jeong, G. H. [Department of Nano Applied Engineering, Kangwon National University, Kangwon-do 200-701 (Korea, Republic of); Lee, I.; Kim, K. S. [Department of Physics and Graphene Research Institute, Sejong University, Seoul 143-747 (Korea, Republic of)

2015-07-20

A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

Exploitation of sub-micron cavitation nuclei to enhance ultrasound-mediated transdermal transport and penetration of vaccines.

Science.gov (United States)

Bhatnagar, Sunali; Kwan, James J; Shah, Apurva R; Coussios, Constantin-C; Carlisle, Robert C

2016-09-28

Inertial cavitation mediated by ultrasound has been previously shown to enable skin permeabilisation for transdermal drug and vaccine delivery, by sequentially applying the ultrasound then the therapeutic in liquid form on the skin surface. Using a novel hydrogel dosage form, we demonstrate that the use of sub-micron gas-stabilising polymeric nanoparticles (nanocups) to sustain and promote cavitation activity during simultaneous application of both drug and vaccine results in a significant enhancement of both the dose and penetration of a model vaccine, Ovalbumin (OVA), to depths of 500μm into porcine skin. The nanocups themselves exceeded the penetration depth of the vaccine (up to 700μm) due to their small size and capacity to 'self-propel'. In vivo murine studies indicated that nanocup-assisted ultrasound transdermal vaccination achieved significantly (pultrasound-assisted vaccine delivery in the presence of nanocups demonstrated substantially higher specific anti-OVA IgG antibody levels compared to other transdermal methods. Further optimisation can lead to a viable, safe and non-invasive delivery platform for vaccines with potential use in a primary care setting or personalized self-vaccination at home. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Investigation of the epitaxial growth of Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3} thin films and their application in ferroelectric superconducting field effect transistors; Untersuchung des epitaktischen Wachstums duenner Pb(Zr{sub 0,52}Ti{sub 0,48})O{sub 3}-Schichten und ihre Anwendung in ferroelektrischen supraleitenden Feldeffektransistoren

Energy Technology Data Exchange (ETDEWEB)

Aidam, R

1999-02-01

The influences of the polarization of ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) films on the properties of YBa{sub 2}Cu{sub 3}O{sub x} (YBCO) films were investigated in ferroelectric superconducting field effect transistors (FSuFETs). First the epitaxial growth of PZT films deposited by reactive sputtering in an argon/oxygen atmosphere was investigated. SrTiO{sub 3} single crystals and YBCO thin films proved as suitable substrates. The lead content of the PZT films depended sensitively on the deposition temperature T{sub s} and the gas pressure. By using a high pressure of 0.26 mbar the correct stoichiometry could be achieved up to an maximum T{sub s} of 580 C. Above a minimum T{sub s} of 540 C the ferroelectric perovskite structure grew. In the optimum temperature range between 560 C and 580 C the films grew with a minimum mosaic spread of {delta}{omega} < 0.3 and a small amount of less than 1% of paraelectric phase. The best ferroelectric properties could be obtained for films with the highest degree of epitaxy and the correct stoichiometry. The maximum remanent polarization amounted P{sub r} = 61 {mu}C/cm{sup 2} and the coercive field E{sub C} was 150 kV/cm at 77 K. The breakdown field was four to five times larger than E{sub C}. Fatigue studies revealed a loss of switchable polarization of 30% after 10{sup 8} cycles at 77 K, whereas loss of retention and the effect of ageing were negligible. During the process of oxidation of the heterostructure at 400 C and an oxygen pressure of 800 mbar a reaction at the PZT/YBCO interface was observed, which lead to a degradation of the transport properties of the superconductor. This reaction could be avoided by a thin SrTiO{sub 3} buffer layer without disturbing the ferroelectric hysteresis essentially.

Gate-modulated conductance of few-layer WSe{sub 2} field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Energy Technology Data Exchange (ETDEWEB)

Wang, Junjie; Feng, Simin [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Rhodes, Daniel; Balicas, Luis [National High Magnetic Field Lab, Florida State University, Tallahassee, Florida 32310 (United States); Nguyen, Minh An T. [Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Watanabe, K.; Taniguchi, T. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Mallouk, Thomas E. [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Biochemistry and Molecular Biology, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Terrones, Mauricio [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Zhu, J., E-mail: jzhu@phys.psu.edu [Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States); Center for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

2015-04-13

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides (TMDCs) faces a number of challenges in both efforts. This work attempts to establish a connection between the two by examining the gate-dependent conductance of few-layer (1-5L) WSe{sub 2} field effect devices. Measurements and modeling of the subgap regime reveal Schottky barrier transistor behavior. We show that transmission through the contact barrier is dominated by thermionic field emission (TFE) at room temperature, despite the lack of intentional doping. The TFE process arises due to a large number of subgap impurity states, the presence of which also leads to high mobility edge carrier densities. The density of states of such impurity states is self-consistently determined to be approximately 1–2 × 10{sup 13}/cm{sup 2}/eV in our devices. We demonstrate that substrate is unlikely to be a major source of the impurity states and suspect that lattice defects within the material itself are primarily responsible. Our experiments provide key information to advance the quality and understanding of TMDC materials and electrical devices.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

A novel high reliability CMOS SRAM cell

Energy Technology Data Exchange (ETDEWEB)

Xie Chengmin; Wang Zhongfang; Wu Longsheng; Liu Youbao, E-mail: hglnew@sina.com [Computer Research and Design Department, Xi' an Microelectronic Technique Institutes, Xi' an 710054 (China)

2011-07-15

A novel 8T single-event-upset (SEU) hardened and high static noise margin (SNM) SRAM cell is proposed. By adding one transistor paralleled with each access transistor, the drive capability of pull-up PMOS is greater than that of the conventional cell and the read access transistors are weaker than that of the conventional cell. So the hold, read SNM and critical charge increase greatly. The simulation results show that the critical charge is almost three times larger than that of the conventional 6T cell by appropriately sizing the pull-up transistors. The hold and read SNM of the new cell increase by 72% and 141.7%, respectively, compared to the 6T design, but it has a 54% area overhead and read performance penalty. According to these features, this novel cell suits high reliability applications, such as aerospace and military. (semiconductor integrated circuits)

A novel high reliability CMOS SRAM cell

International Nuclear Information System (INIS)

Xie Chengmin; Wang Zhongfang; Wu Longsheng; Liu Youbao

2011-01-01

A novel 8T single-event-upset (SEU) hardened and high static noise margin (SNM) SRAM cell is proposed. By adding one transistor paralleled with each access transistor, the drive capability of pull-up PMOS is greater than that of the conventional cell and the read access transistors are weaker than that of the conventional cell. So the hold, read SNM and critical charge increase greatly. The simulation results show that the critical charge is almost three times larger than that of the conventional 6T cell by appropriately sizing the pull-up transistors. The hold and read SNM of the new cell increase by 72% and 141.7%, respectively, compared to the 6T design, but it has a 54% area overhead and read performance penalty. According to these features, this novel cell suits high reliability applications, such as aerospace and military. (semiconductor integrated circuits)

Field-effect transistors as electrically controllable nonlinear rectifiers for the characterization of terahertz pulses

Science.gov (United States)

Lisauskas, Alvydas; Ikamas, Kestutis; Massabeau, Sylvain; Bauer, Maris; ČibiraitÄ--, DovilÄ--; Matukas, Jonas; Mangeney, Juliette; Mittendorff, Martin; Winnerl, Stephan; Krozer, Viktor; Roskos, Hartmut G.

2018-05-01

We propose to exploit rectification in field-effect transistors as an electrically controllable higher-order nonlinear phenomenon for the convenient monitoring of the temporal characteristics of THz pulses, for example, by autocorrelation measurements. This option arises because of the existence of a gate-bias-controlled super-linear response at sub-threshold operation conditions when the devices are subjected to THz radiation. We present measurements for different antenna-coupled transistor-based THz detectors (TeraFETs) employing (i) AlGaN/GaN high-electron-mobility and (ii) silicon CMOS field-effect transistors and show that the super-linear behavior in the sub-threshold bias regime is a universal phenomenon to be expected if the amplitude of the high-frequency voltage oscillations exceeds the thermal voltage. The effect is also employed as a tool for the direct determination of the speed of the intrinsic TeraFET response which allows us to avoid limitations set by the read-out circuitry. In particular, we show that the build-up time of the intrinsic rectification signal of a patch-antenna-coupled CMOS detector changes from 20 ps in the deep sub-threshold voltage regime to below 12 ps in the vicinity of the threshold voltage.

Sub-micron indent induced plastic deformation in copper and irradiated steel

International Nuclear Information System (INIS)

Robertson, Ch.

1998-09-01

In this work we aim to study the indent induced plastic deformation. For this purpose, we have developed a new approach, whereby the indentation curves provides the mechanical behaviour, while the deformation mechanisms are observed thanks to Transmission Electron Microscopy (TEM). In order to better understand how an indent induced dislocation microstructure forms, numerical modeling of the indentation process at the scale of discrete dislocations has been worked out as well. Validation of this modeling has been performed through direct comparison of the computed microstructures with TEM micrographs of actual indents in pure Cu [001]. Irradiation induced modifications of mechanical behaviour of ion irradiated 316L have been investigated, thanks to the mentioned approach. An important hardening effect was reported from indentation data (about 50%), on helium irradiated 316L steel. TEM observations of the damage zone clearly show that this behaviour is associated with the presence of He bubbles. TEM observations of the indent induced plastic zone also showed that the extent of the plastic zone is strongly correlated with hardness, that is to say: harder materials gets a smaller plastic zone. These results thus clearly established that the selected procedure can reveal any irradiation induced hardening in sub-micron thick ion irradiated layers. The behaviour of krypton irradiated 316L steel is somewhat more puzzling. In one hand indeed, a strong correlation between the defect cluster size and densities on the irradiation temperature is observed in the 350 deg C -600 deg C range, thanks to TEM observations of the damage zone. On the other hand, irradiation induced hardening reported from indentation data is relatively small (about 10%) and shows no dependence upon the irradiation temperature (within the mentioned range). In addition, it has been shown that the reported hardening vanishes following appropriate post-irradiation annealing, although most of the TEM

Nano-crystallization in ZnO-doped In{sub 2}O{sub 3} thin films via excimer laser annealing for thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Fujii, Mami N., E-mail: f-mami@ms.naist.jp; Ishikawa, Yasuaki; Bermundo, Juan Paolo Soria; Uraoka, Yukiharu [Nara Institute of Science and Technology, 8916-5 Takayama, Ikoma, Nara 630-0192 (Japan); Ishihara, Ryoichi; Cingel, Johan van der; Mofrad, Mohammad R. T. [Delft University of Technology, Feldmannweg 17, P.O. Box 5053, 2600 GB Delft (Netherlands); Kawashima, Emi; Tomai, Shigekazu; Yano, Koki [Idemitsu Kosan Co., Ltd., 1280 Kami-izumi, Sodegaura, Chiba, 299-0293 (Japan)

2016-06-15

In a previous work, we reported the high field effect mobility of ZnO-doped In{sub 2}O{sub 3} (IZO) thin film transistors (TFTs) irradiated by excimer laser annealing (ELA) [M. Fujii et al., Appl. Phys. Lett. 102, 122107 (2013)]. However, a deeper understanding of the effect of ELA on the IZO film characteristics based on crystallinity, carrier concentrations, and optical properties is needed to control localized carrier concentrations for fabricating self-aligned structures in the same oxide film and to adequately explain the physical characteristics. In the case of as-deposited IZO film used as the channel, a high carrier concentration due to a high density of oxygen vacancies was observed; such a film does not show the required TFT characteristics but can act as a conductive film. We achieved a decrease in the carrier concentration of IZO films by crystallization using ELA. This means that ELA can form localized conductive or semi-conductive areas on the IZO film. We confirmed that the reason for the carrier concentration decrease was the decrease of oxygen-deficient regions and film crystallization. The annealed IZO films showed nano-crystalline phase, and the temperature at the substrate was substantially less than the temperature limit for flexible films such as plastic, which is 50°C. This paves the way for the formation of self-aligned structures and separately formed conductive and semi-conductive regions in the same oxide film.

Unijunction transistors

International Nuclear Information System (INIS)

1981-01-01

The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

Energy Technology Data Exchange (ETDEWEB)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz; Rouvimov, Sergei; Orlov, Alexei O.; Snider, Gregory L. [Department of Electrical Engineering, University of Notre Dame, 275 Fitzpatrick Hall, Notre Dame, Indiana 46556 (United States)

2016-01-15

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperatures (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

Energy Technology Data Exchange (ETDEWEB)

Park, Steve [Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States); Nam, Ji Hyun [Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States); Koo, Ja Hoon; Lei, Ting; Bao, Zhenan, E-mail: zbao@stanford.edu [Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)

2015-03-09

We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

Si/Ge hetero-structure nanotube tunnel field effect transistor

KAUST Repository

Hanna, A. N.

2015-01-07

We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

Si/Ge hetero-structure nanotube tunnel field effect transistor

KAUST Repository

Hanna, A. N.; Hussain, Muhammad Mustafa

2015-01-01

We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application. We show that nanotube topology can result in higher performance through higher normalized current when compared to nanowire architecture at Vdd-=-1-V due to the availability of larger tunneling cross section and lower Shockley-Reed-Hall recombination. Both architectures are able to achieve sub 60-mV/dec performance for more than five orders of magnitude of drain current. This enables the nanotube configuration achieving performance same as the nanowire architecture even when Vdd is scaled down to 0.5-V.

Observation of hole injection boost via two parallel paths in Pentacene thin-film transistors by employing Pentacene: 4, 4″-tris(3-methylphenylphenylamino) triphenylamine: MoO{sub 3} buffer layer

Energy Technology Data Exchange (ETDEWEB)

Yan, Pingrui; Liu, Ziyang; Liu, Dongyang; Wang, Xuehui; Yue, Shouzhen; Zhao, Yi, E-mail: yizhao@jlu.edu.cn [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Zhang, Shiming, E-mail: zhangshimingjlu@gmail.com [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012 (China); Département of Chemical Engineering, École Polytechnique de Montréal, Montréal, Québec H3C3J7 (Canada)

2014-11-01

Pentacene organic thin-film transistors (OTFTs) were prepared by introducing 4, 4″-tris(3-methylphenylphenylamino) triphenylamine (m-MTDATA): MoO{sub 3}, Pentacene: MoO{sub 3}, and Pentacene: m-MTDATA: MoO{sub 3} as buffer layers. These OTFTs all showed significant performance improvement comparing to the reference device. Significantly, we observe that the device employing Pentacene: m-MTDATA: MoO{sub 3} buffer layer can both take advantage of charge transfer complexes formed in the m-MTDATA: MoO{sub 3} device and suitable energy level alignment existed in the Pentacene: MoO{sub 3} device. These two parallel paths led to a high mobility, low threshold voltage, and contact resistance of 0.72 cm{sup 2}/V s, −13.4 V, and 0.83 kΩ at V{sub ds} = − 100 V. This work enriches the understanding of MoO{sub 3} doped organic materials for applications in OTFTs.

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO₂ Gate Dielectrics by CF₄ Plasma Treatment.

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-05-17

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO₂ gate insulator and CF₄ plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO₂ gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm²/V∙s (without treatment) to 54.6 cm²/V∙s (with CF₄ plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO₂ gate dielectric has also been improved by the CF₄ plasma treatment. By applying the CF₄ plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device's immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF₄ plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO₂ gate dielectric, but also enhances the device's reliability.

Construct Validity and Reliability of the SARA Gait and Posture Sub-scale in Early Onset Ataxia

Directory of Open Access Journals (Sweden)

Tjitske F. Lawerman

2017-12-01

Full Text Available Aim: In children, gait and posture assessment provides a crucial marker for the early characterization, surveillance and treatment evaluation of early onset ataxia (EOA. For reliable data entry of studies targeting at gait and posture improvement, uniform quantitative biomarkers are necessary. Until now, the pediatric test construct of gait and posture scores of the Scale for Assessment and Rating of Ataxia sub-scale (SARA is still unclear. In the present study, we aimed to validate the construct validity and reliability of the pediatric (SARAGAIT/POSTURE sub-scale.Methods: We included 28 EOA patients [15.5 (6–34 years; median (range]. For inter-observer reliability, we determined the ICC on EOA SARAGAIT/POSTURE sub-scores by three independent pediatric neurologists. For convergent validity, we associated SARAGAIT/POSTURE sub-scores with: (1 Ataxic gait Severity Measurement by Klockgether (ASMK; dynamic balance, (2 Pediatric Balance Scale (PBS; static balance, (3 Gross Motor Function Classification Scale -extended and revised version (GMFCS-E&R, (4 SARA-kinetic scores (SARAKINETIC; kinetic function of the upper and lower limbs, (5 Archimedes Spiral (AS; kinetic function of the upper limbs, and (6 total SARA scores (SARATOTAL; i.e., summed SARAGAIT/POSTURE, SARAKINETIC, and SARASPEECH sub-scores. For discriminant validity, we investigated whether EOA co-morbidity factors (myopathy and myoclonus could influence SARAGAIT/POSTURE sub-scores.Results: The inter-observer agreement (ICC on EOA SARAGAIT/POSTURE sub-scores was high (0.97. SARAGAIT/POSTURE was strongly correlated with the other ataxia and functional scales [ASMK (rs = -0.819; p < 0.001; PBS (rs = -0.943; p < 0.001; GMFCS-E&R (rs = -0.862; p < 0.001; SARAKINETIC (rs = 0.726; p < 0.001; AS (rs = 0.609; p = 0.002; and SARATOTAL (rs = 0.935; p < 0.001]. Comorbid myopathy influenced SARAGAIT/POSTURE scores by concurrent muscle weakness, whereas comorbid myoclonus predominantly influenced

Low temperature cured poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-05-01

Low temperature processable passivation materials are necessary to fabricate highly reliable amorphous InGaZnO (a-IGZO) thin-film transistors (TFT) on organic substrates for flexible device applications. We investigated 3 types of poly-siloxane (Poly-SX) passivation layers fabricated by a solution process and cured at low temperatures (180 °C) for a-IGZO TFTs. This passivation layer greatly improves the stability of the a-IGZO device even after being subjected to positive (PBS) and negative bias stress (NBS). The field effect mobility (μ) of MePhQ504010 passivated on the TFT reached 8.34 cm2/Vs and had a small threshold voltage shift of 0.9 V after PBS, -0.8 V after NBS without the hump phenomenon. Furthermore, we analyzed the hydrogen and hydroxide states in the a-IGZO layer by secondary ion mass spectrometry and X-ray photoelectron spectroscopy to determine the cause of excellent electrical properties despite the curing performed at a low temperature. These results show the potential of the solution processed Poly-SX passivation layer for flexible devices.

Tungsten trioxide as high-{kappa} gate dielectric for highly transparent and temperature-stable zinc-oxide-based thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Michael; Wenckstern, Holger von; Grundmann, Marius [Universitaet Leipzig, Fakultaet fuer Physik und Geowissenschaften, Institut fuer Experimentelle Physik II, Linnestr. 5, 04103 Leipzig (Germany)

2012-07-01

We demonstrate metal-insulator-semiconductor field-effect transistors with high-{kappa}, room-temperature deposited, highly transparent tungsten trioxide (WO{sub 3}) as gate dielectric. The channel material consists of a zinc oxide (ZnO) thin-film. The transmittance and resistivity of WO{sub 3} films was tuned in order to obtain a highly transparent and insulating WO{sub 3} dielectric. The devices were processed by standard photolithography using lift-off technique. On top of the WO{sub 3} dielectric a highly transparent and conductive oxide consisting of ZnO: Al 3% wt. was deposited. The gate structure of the devices exhibits an average transmittance in the visible spectral range of 86%. The on/off-current ratio is larger than 10{sup 8} with off- and gate leakage-currents below 3 x 10{sup -8} A/cm{sup 2}. Due to the high relative permittivity of {epsilon}{sub r} {approx} 70, a gate voltage sweep of only 2 V is necessary to turn the transistor on and off with a minimum subthreshold swing of 80 mV/decade. The channel mobility of the transistors equals the Hall-effect mobility with a value of 5 cm{sup 2}/Vs. It is furthermore shown, that the devices are stable up to operating temperatures of at least 150 C.

A novel gate and drain engineered charge plasma tunnel field-effect transistor for low sub-threshold swing and ambipolar nature

Science.gov (United States)

Yadav, Dharmendra Singh; Raad, Bhagwan Ram; Sharma, Dheeraj

2016-12-01

In this paper, we focus on the improvement of figures of merit for charge plasma based tunnel field-effect transistor (TFET) in terms of ON-state current, threshold voltage, sub-threshold swing, ambipolar nature, and gate to drain capacitance which provides better channel controlling of the device with improved high frequency response at ultra-low supply voltages. Regarding this, we simultaneously employ work function engineering on the drain and gate electrode of the charge plasma TFET. The use of gate work function engineering modulates the barrier on the source/channel interface leads to improvement in the ON-state current, threshold voltage, and sub-threshold swing. Apart from this, for the first time use of work function engineering on the drain electrode increases the tunneling barrier for the flow of holes on the drain/channel interface, it results into suppression of ambipolar behavior. The lowering of gate to drain capacitance therefore enhanced high frequency parameters. Whereas, the presence of dual work functionality at the gate electrode and over the drain region improves the overall performance of the charge plasma based TFET.

High-k dielectrics as bioelectronic interface for field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Borstlap, D

2007-03-15

Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

The influence of atmosphere on performance of pure-phase WZ and ZB InAs nanowire transistors.

Science.gov (United States)

Ullah, Abu Rifat; Joyce, Hannah J; Tan, Hoe; Jagadish, Chennupati; Micolich, Adam P

2017-09-21

We compare the characteristics of phase-pure MOCVD grown ZB and WZ InAs nanowire transistors in several atmospheres: air, dry pure N<sub>2sub> and O<sub>2sub>, and N<sub>2sub> bubbled through liquid H<sub>2sub>O and alcohols to identify whether phase-related structural/surface differences affect their response. Both WZ and ZB give poor gate characteristics in dry state. Adsorption of polar species reduces off-current by 2-3 orders of magnitude, increases on-off ratio and significantly reduces sub-threshold slope. The key difference is the greater sensitivity of WZ to low adsorbate level. We attribute this to facet structure and its influence on the separation between conduction electrons and surface adsorption sites. We highlight the important role adsorbed species play in nanowire device characterisation. WZ is commonly thought superior to ZB in InAs nanowire transistors. We show this is an artefact of the moderate humidity found in ambient laboratory conditions: WZ and ZB perform equally poorly in the dry gas limit yet equally well in the wet gas limit. We also highlight the vital role density-lowering disorder has in improving gate characteristics, be it stacking faults in mixed-phase WZ or surface adsorbates in pure-phase nanowires. © 2017 IOP Publishing Ltd.

Deformable Organic Nanowire Field-Effect Transistors.

Science.gov (United States)

Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

2018-02-01

Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

Saddle-fin cell transistors with oxide etch rate control by using tilted ion implantation (TIS-fin) for sub-50-nm DRAMs

International Nuclear Information System (INIS)

Yoo, Min Soo; Choi, Kang Sik; Sun, Woo Kyung

2010-01-01

As DRAM cell pitch size decreases, the need for a high performance transistor is increasing. Though saddle-fin (S-fin) transistors have superior characteristics, S-fin transistors are well known to be more sensitive to process variation. To make uniform S-fin transistors, for the first time, we developed a new fin formation method using tilted ion implantation along the wordline direction after a recess gate etch. Due to the increased etch rate of the oxide film by ion implantation damage, fins are made at the bottom channel of the recess gate after wet etching. The resulting tilt implanted saddle-fin (TIS-fin) transistor has remarkably improved characteristics, such as ∼8% subthreshold swing (SS) and a 40% drain induced barrier lowering (DIBL) decrease. Especially, the TIS-fin with a neutral dopant has a reduced threshold voltage (Vth) variation within a wafer (<100 mV), which is comparable with that of a mass-produced sphere-shaped recessed channel array transistor (SRCAT).

Extreme Temperature Performance of Automotive-Grade Small Signal Bipolar Junction Transistors

Science.gov (United States)

Boomer, Kristen; Damron, Benny; Gray, Josh; Hammoud, Ahmad

2018-01-01

Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.

An improved bipolar junction transistor model for electrical and radiation effects

International Nuclear Information System (INIS)

Kleiner, C.T.; Messenger, G.C.

1982-01-01

The use of bipolar technology in hardened electronic design requires an in-depth understanding of how the Bipolar Junction Transistor (BJT) behaves under normal electrical and radiation environments. Significant improvements in BJT process technology have been reported, and the successful use of sophisticated Computer Aided Design (CAD) tools has aided implementation with respect to specific families of hardened devices. The most advanced BJT model used to date is the Improved Gummel-Poon (IGP) model which is used in CAA programs such as the SPICE II and SLICE programs. The earlier Ebers-Moll model (ref 1 and 2) has also been updated to compare with the older Gummel-Poon model. This paper describes an adaptation of an existing computer model which incorporates the best features of both models into a new, more accurate model called the Improved Bipolar Junction Transistor model. This paper also describes a unique approach to data reduction for the B(I /SUB c/) and V /SUB BE/(ACT) vs I /SUB c/characterizations which has been successfully programmed in Basic using a Commodore PET computer. This model is described in the following sections

Simple Exact Algorithm for Transistor Sizing of Low-Power High-Speed Arithmetic Circuits

Directory of Open Access Journals (Sweden)

Tooraj Nikoubin

2010-01-01

Full Text Available A new transistor sizing algorithm, SEA (Simple Exact Algorithm, for optimizing low-power and high-speed arithmetic integrated circuits is proposed. In comparison with other transistor sizing algorithms, simplicity, accuracy, independency of order and initial sizing factors of transistors, and flexibility in choosing the optimization parameters such as power consumption, delay, Power-Delay Product (PDP, chip area or the combination of them are considered as the advantages of this new algorithm. More exhaustive rules of grouping transistors are the main trait of our algorithm. Hence, the SEA algorithm dominates some major transistor sizing metrics such as optimization rate, simulation speed, and reliability. According to approximate comparison of the SEA algorithm with MDE and ADC for a number of conventional full adder circuits, delay and PDP have been improved 55.01% and 57.92% on an average, respectively. By comparing the SEA and Chang's algorithm, 25.64% improvement in PDP and 33.16% improvement in delay have been achieved. All the simulations have been performed with 0.13 m technology based on the BSIM3v3 model using HSpice simulator software.

The effects of transistor source-to-gate bridging faults in complex CMOS gates

Science.gov (United States)

Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

1991-06-01

A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

Optimization of Reliability and Power Consumption in Systems on a Chip

OpenAIRE

Simunic, Tajana; Mihic, Kresimir; De Micheli, Giovanni

2005-01-01

Aggressive transistor scaling, decreased voltage margins and increased processor power and temperature, have made reliability assessment a much more significant issue in design. Although reliability of devices and interconnect has been broadly studied, here we characterize reliability at the system level. Thus we consider component-based System on Chip designs. Reliability is strongly affected by system temperature, which is in turn driven by power consumption. Thus, component reliability and...

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Science.gov (United States)

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, H. N.

2012-06-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin film transistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectric transistors, which is very promising for low-power non-volatile memory applications.

Solvothermal synthesis of gallium-indium-zinc-oxide nanoparticles for electrolyte-gated transistors.

Science.gov (United States)

Santos, Lídia; Nunes, Daniela; Calmeiro, Tomás; Branquinho, Rita; Salgueiro, Daniela; Barquinha, Pedro; Pereira, Luís; Martins, Rodrigo; Fortunato, Elvira

2015-01-14

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Interface characteristics of spin-on-dielectric SiO{sub x}-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Ko, Pil-Seok; Park, Kyoung-Seok; Yoon, Yeo-Chang [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of); Sheen, Mi-Hyang [Department of Materials Science Engineering, Seoul National University, 151-742 Seoul (Korea, Republic of); Kim, Sam-Dong, E-mail: samdong@dongguk.edu [Division of Electronics and Electrical Engineering, Dongguk University, 100-715 Seoul (Korea, Republic of)

2015-08-31

To reveal the cause for significant enhancement of dc current performance of the AlGaN/GaN high electron mobility transistors (HEMTs) with the spin-on-dielectric (SOD) SiO{sub x}-buffered passivation structure compared to the conventional Si{sub 3}N{sub 4} passivation deposited by plasma-enhanced vapor deposition (PECVD), we characterized the passivation interfaces using the cross-sectional transmission electron microscopy, cathodoluminescence, capacitance–voltage (C–V) characterizations, and Hall-effect measurements. The interface state density of PECVD Si{sub 3}N{sub 4} passivation was in the range of 10{sup 12}–10{sup 13} cm{sup −2} eV{sup −1}, which is one-order higher than that of the SOD (10{sup 11}–10{sup 12} cm{sup −2} eV{sup −1}) as measured by C–V measurements from the metal–insulator–semiconductor capacitors. Higher density of effective oxide charge density (especially dominant contribution of ionic mobile charge) was also derived from the PECVD Si{sub 3}N{sub 4} passivation. A well-resolved reduction of the electron Hall mobility of the Si{sub 3}N{sub 4} passivation compared to that of the perhydropolysilazane SOD passivation, which can be due to the higher-density interface states and trap charges, can answer the relative dc current collapse of our HEMT devices. - Highlights: • Spin-on-dielectric (SOD)-buffered passivation for AlGaN/GaN HEMTs • Characterize the charge density and interface states using the C–V measurements • SOD-buffered passivation minimizes surface states at the interface. • DC performance of SOD-buffered structure is due to the interface characteristics.

Tunable Heterodyne Receiver from 100 Micron to 1,000 Micron for Airborne Observations

Science.gov (United States)

Roeser, H. P.; Wattenbach, R.; Vanderwal, P.

1984-01-01

Interest in high resolution spectrometers for the submillimeter wavelength range from 100 micron to 1,000 micron is mostly stimulated by molecular spectroscopy in radioastronomy and atmospheric physics, and by plasma diagnostic experiments. Schottky diodes in waveguide mixer technology and InSb-hot electron bolometers are successfully used in the 0.5 to a few millimeter range whereas tandem Fabry-Perot spectrometers combined with photoconductive detectors (Ge:Sb and Ge:Ga) are used for the 100 micron range. Recent research on heterodyne spectrometers, with Schottky diodes in an open structure mixer and a molecular laser as local oscillators, which can be used over the whole wavelength range is summarized.

Poly(3-hexylthiophene): TIPS-pentacene blends aiming transistor applications

Energy Technology Data Exchange (ETDEWEB)

Silva Ozório, Maiza da, E-mail: ozoriounesp@gmail.com; Nogueira, Gabriel Leonardo; Morais, Rogério Miranda; Silva Martin, Cibely da; Constantino, Carlos José Leopoldo; Alves, Neri

2016-06-01

Poly(3-hexylthiophene):6,13-bis(triisopropylsilylethynyl)-pentacene (P3HT:TP) blends with a ratio of 1:1 (wt/wt) were deposited via spin coating on anodized oxide (Al{sub 2}O{sub 3}). A phase separation of the compounds was observed, resulting in the formation of crystalline aggregates of TP molecules that segregate vertically on the surface. The form of segregation depends on the oxide surface treatment used. Spectroscopy analysis shows a higher molecular order of P3HT in the blend than for neat film and that TP molecules are also distributed in the polymeric matrix. Regarding the OFET characteristics, charge carrier mobilities of 1.2 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} and 2.0 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} were obtained from devices for untreated and (hexamethyldisilazane) HMDS-treated Al{sub 2}O{sub 3} gate dielectric, respectively. These results confirm that P3HT:TP blends have good potential as an active layer in organic field effect transistors (OFETs). - Highlights: • Phase separation occurs in the P3HT:TP blend. • The P3HT:TP blends form aggregates that segregate vertically to the surface. • The molecular order of the P3HT is higher for the blend than for the neat film. • Treatment of surface with HMDS influence in the formation of the aggregate • The P3HT:TP blends have great viability of using for application in transistors.

Reliability of surface electromyography activity of gluteal and hamstring muscles during sub-maximal and maximal voluntary isometric contractions.

Science.gov (United States)

Bussey, Melanie D; Aldabe, Daniela; Adhia, Divya; Mani, Ramakrishnan

2018-04-01

Normalizing to a reference signal is essential when analysing and comparing electromyography signals across or within individuals. However, studies have shown that MVC testing may not be as reliable in persons with acute and chronic pain. The purpose of this study was to compare the test-retest reliability of the muscle activity in the biceps femoris and gluteus maximus between a novel sub-MVC and standard MVC protocols. This study utilized a single individual repeated measures design with 12 participants performing multiple trials of both the sub-MVC and MVC tasks on two separate days. The participant position in the prone leg raise task was standardised with an ultrasonic sensor to improve task precession between trials/days. Day-to-day and trial-to-trial reliability of the maximal muscle activity was examined using ICC and SEM. Day-to-day and trial-to-trial reliability of the EMG activity in the BF and GM were high (0.70-0.89) to very high (≥0.90) for both test procedures. %SEM was <5-10% for both tests on a given day but higher in the day-to-day comparisons. The lower amplitude of the sub-MVC is a likely contributor to increased %SEM (8-13%) in the day-to-day comparison. The findings show that the sub-MVC modified prone double leg raise results in GM and BF EMG measures similar in reliability and precision to the standard MVC tasks. Therefore, the modified prone double leg raise may be a useful substitute for traditional MVC testing for normalizing EMG signals of the BF and GM. Copyright © 2017 Elsevier Ltd. All rights reserved.

Rapid growth of amorphous carbon films on the inner surface of micron-thick and hollow-core fibers

Energy Technology Data Exchange (ETDEWEB)

Ji, Longfei [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Liu, Dongping, E-mail: Dongping.liu@dlnu.edu.cn [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Zhou, Xinwei [Department of Mechanical Engineering, Zhejiang University, Zhejiang 310007 (China); Song, Ying [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 (China); Ni, Weiyuan [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Niu, Jinhai; Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China)

2013-10-01

Ultrathick (> 25 μm) carbon films were obtained on the inner surface of hollow and micron-thick quartz fibers by confining CH{sub 4}/He or C{sub 2}H{sub 2}/He microplasmas in their hollow cores. The resulting carbon films were studied by using scanning electron microscopy and energy-dispersive X-ray spectroscopy. The microplasma-enhanced chemical vapor deposition (CVD) technique resulted in the uniform growth of amorphous carbon films on the inner surface of very long (> 1 m) hollow-core fibers. Film deposition is performed by using microplasmas at atmospheric pressure and at 50 Pa. The carbon films obtained with the latter show the smooth inner surfaces and the well continuity across the film/optical fiber. Low-pressure CH{sub 4}/He and C{sub 2}H{sub 2}/He microplasmas can lead to a rapid growth (∼ 2.00 μm/min) of carbon films with their thickness of > 25 μm. The optical emission measurements show that various hydrocarbon species were formed in these depositing microplasmas due to the collisions between CH{sub 4}/C{sub 2}H{sub 2} molecules and energetic species. The microplasma-enhanced CVD technique running without the complicated fabrication processes shows its potentials for rapidly depositing the overlong carbon tubes with their inner diameters of tens of microns. - Highlights: • The microplasma device is applied for coating deposition inside hollow-core fibers. • The microplasma device results in > 25 μm-thick carbon films. • The microplasma device is simple for deposition of ultralong carbon tubes.

Observation of the dynamics of magnetically induced chains of sub-micron superparamagnetic beads in aqueous solutions by laser light scattering

International Nuclear Information System (INIS)

Tanizawa, Y; Tashiro, T; Sandhu, A; Ko, P J

2013-01-01

Optical monitoring the behaviour of magnetically induced self-assembled chains of superparamagnetic beads (SPBs) are of interest for biomedical applications such as biosensors. However, it is difficult to directly monitor magnetically induced self-assembly of sub-micron nano-beads with conventional optical microscopes. Here, we describe the optical observation of the dynamics of magnetically induced self-assembled rotating chains of 130 nm SPBs in aqueous solutions by laser light scattering. Magnetic fields of ∼1 kOe were applied to control the self-assembly chains of SPBs and their behaviour analyzed by monitoring the intensity of laser light scattered from the chain structures. We compared the light scattering from chains that were formed only by the application of external fields with chains formed by beads functionalized by EDC, where chemical reactions lead to the bonding of individual beads to form chains. The EDC experiments are a precursor to experiments on molecular recognition applications for biomedical diagnostics.

Parametric study of plasma-mediated thermoluminescence produced by Al2O3 sub-micron powders

Science.gov (United States)

Morávek, T.; Ambrico, P. F.; Ambrico, M.; Schiavulli, L.; Ráheľ, J.

2017-10-01

Sub-micron Al2O3 powders with a surface activated by dielectric barrier discharge exhibit improved performance in wet deposition of ceramic layers. In addressing the possible mechanisms responsible for the observed improvement, a comprehensive thermoluminescence (TL) study of plasma-activated powders was performed. TL offers the unique possibility of exploring the population of intrinsic electrons/holes in the charge trapping states. This study covers a wide range of experimental conditions affecting the TL of powders: treatment time, plasma working gas composition, change of discharge configuration, step-annealing of powder, exposure to laser irradiation and aging time. Deconvoluted TL spectra were followed for the changes in their relative contributions. The TL spectra of all tested gases (air, Ar, N2 and 5% He in N2) consist of the well-known main dosimetric peak at 450 K and a peak of similar magnitude at higher temperatures, centered between 700 and 800 K depending on the working gas used. N2 plasma treatment gave rise to a new specific TL peak at 510 K, which exhibited several peculiarities. Initial thermal annealing of Al2O3 powders led to its significant amplification (unlike the other peaks); the peak was insensitive to optical bleaching, and it exhibited slow gradual growth during the long-term aging test. Besides its relevance to the ceramic processing studies, a comprehensive set of data is presented that provides a useful and unconventional view on plasma-mediated material changes.

Copper atomic-scale transistors.

Science.gov (United States)

Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

2017-01-01

We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

Ultrafast microwave hydrothermal synthesis and characterization of Bi{sub 1−x}La{sub x}FeO{sub 3} micronized particles

Energy Technology Data Exchange (ETDEWEB)

Ponzoni, C. [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy); Cannio, M., E-mail: maria.cannio@unimore.it [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy); Boccaccini, D.N.; Bahl, C.R.H.; Agersted, K. [Department of Energy Conversion and Storage, Technical University of Denmark Frederiksborgvej, 4000 Roskilde (Denmark); Leonelli, C. [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy)

2015-07-15

In this work a microwave assisted hydrothermal method is applied to successfully synthesize lanthanum doped bismuth ferrites (BLFO, Bi{sub 1−x}La{sub x}FeO{sub 3} where x = 0, 0.15, 0.30 and 0.45). The growth mechanism of the Bi{sub 1−x}La{sub x}FeO{sub 3} crystallites is discussed in detail. The existence of the single-phase perovskite structure for all the doped samples is confirmed by the X-ray powder diffraction patterns. A peak shift, observed at lower angle with increasing La doping concentration, indicates that the BiFeO{sub 3} lattice is doped. The results of TG/DTA show a shift in the transition temperature from 805 °C to 815 °C as function of the La-doping for all the doped powders. At higher levels of La doping, i.e. x = 0.30 and 0.45, significant weight losses occur above 860 °C suggesting a change in the physical and chemical properties. Finally, magnetic measurements are carried out at room temperature for pure BiFeO{sub 3} and Bi{sub 0.85}La{sub 0.15}FeO{sub 3}. The results indicate that the materials are both weakly ferromagnetic, with no significant hysteresis in the curves. - Graphical abstract: Display Omitted - Highlights: • MW hydrothermal method applied to synthesize Bi{sub 1−x}La{sub x}FeO{sub 3}, x = 0, 0.15, 0.30, 0.45. • A single-phase perovskite structure for all the samples was confirmed by XRD. • A T{sub c} shift in La doped BiFeO{sub 3} DTA was observed as function of the La-doping. • Magnetic measurements indicate that the materials are weakly ferromagnetic.

Progress towards sub-micron hard x-ray imaging using elliptically bent mirrors and its applications

International Nuclear Information System (INIS)

MacDowell, A.A.; Lamble, G.M.; Celestre, R.S.; Padmore, H.A.; Chang, C.H.; Patel, J.R.

1998-06-01

The authors have developed an x-ray micro-probe facility utilizing mirror bending techniques that allow white light x-rays (4--12keV) from the Advanced light Source Synchrotron to be focused down to spot sizes of micron spatial dimensions. They have installed a 4 crystal monochromator prior to the micro-focusing mirrors. The monochromator is designed such that it can move out of the way of the input beam, and allows the same micron sized sample to be illuminated with either white or monochromatic radiation. Illumination of the sample with white light allows for elemental mapping and Laue x-ray diffraction, while illumination of the sample with monochromatic light allows for elemental mapping (with reduced background), micro-X-ray absorption spectroscopy and micro-diffraction. The performance of the system will be described as will some of the initial experiments that cover the various disciplines of Earth, Material and Life Sciences

Progress towards sub-micron hard x-ray imaging using elliptically bent mirrors and its applications

Energy Technology Data Exchange (ETDEWEB)

MacDowell, A.A.; Lamble, G.M.; Celestre, R.S.; Padmore, H.A. [Lawrence Berkeley National Lab., CA (United States); Chang, C.H.; Patel, J.R. [Lawrence Berkeley National Lab., CA (United States). Advanced Light Source Div.]|[Stanford Univ., CA (United States)

1998-06-01

The authors have developed an x-ray micro-probe facility utilizing mirror bending techniques that allow white light x-rays (4--12keV) from the Advanced light Source Synchrotron to be focused down to spot sizes of micron spatial dimensions. They have installed a 4 crystal monochromator prior to the micro-focusing mirrors. The monochromator is designed such that it can move out of the way of the input beam, and allows the same micron sized sample to be illuminated with either white or monochromatic radiation. Illumination of the sample with white light allows for elemental mapping and Laue x-ray diffraction, while illumination of the sample with monochromatic light allows for elemental mapping (with reduced background), micro-X-ray absorption spectroscopy and micro-diffraction. The performance of the system will be described as will some of the initial experiments that cover the various disciplines of Earth, Material and Life Sciences.

Germanium field-effect transistor made from a high-purity substrate

International Nuclear Information System (INIS)

Hansen, W.L.; Goulding, F.S.; Haller, E.E.

1978-11-01

Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors.

Science.gov (United States)

Chen, Mikai; Wang, Yifan; Shepherd, Nathan; Huard, Chad; Zhou, Jiantao; Guo, L J; Lu, Wei; Liang, Xiaogan

2017-01-24

To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be further exploited to make multibit (or highly desirable analog-tunable) memory devices. Here, we present a study on the abnormal charge-trapping or memory characteristics of few-layer WSe 2 transistors. This work shows that multiple charge-trapping states with large extrema spacing, long retention time, and analog tunability can be excited in the transistors made from mechanically exfoliated few-layer WSe 2 flakes, whereas they cannot be generated in widely studied few-layer MoS 2 transistors. Such charge-trapping characteristics of WSe 2 transistors are attributed to the exfoliation-induced interlayer deformation on the cleaved surfaces of few-layer WSe 2 flakes, which can spontaneously form ambipolar charge-trapping sites. Our additional results from surface characterization, charge-retention characterization at different temperatures, and density functional theory computation strongly support this explanation. Furthermore, our research also demonstrates that the charge-trapping states excited in multiple transistors can be calibrated into consistent multibit data storage levels. This work advances the understanding of the charge memory mechanisms in layered semiconductors, and the observed charge-trapping states could be further studied for enabling ultralow-cost multibit analog memory devices.

Mapping brain activity with flexible graphene micro-transistors

Science.gov (United States)

Blaschke, Benno M.; Tort-Colet, Núria; Guimerà-Brunet, Anton; Weinert, Julia; Rousseau, Lionel; Heimann, Axel; Drieschner, Simon; Kempski, Oliver; Villa, Rosa; Sanchez-Vives, Maria V.; Garrido, Jose A.

2017-06-01

Establishing a reliable communication interface between the brain and electronic devices is of paramount importance for exploiting the full potential of neural prostheses. Current microelectrode technologies for recording electrical activity, however, evidence important shortcomings, e.g. challenging high density integration. Solution-gated field-effect transistors (SGFETs), on the other hand, could overcome these shortcomings if a suitable transistor material were available. Graphene is particularly attractive due to its biocompatibility, chemical stability, flexibility, low intrinsic electronic noise and high charge carrier mobilities. Here, we report on the use of an array of flexible graphene SGFETs for recording spontaneous slow waves, as well as visually evoked and also pre-epileptic activity in vivo in rats. The flexible array of graphene SGFETs allows mapping brain electrical activity with excellent signal-to-noise ratio (SNR), suggesting that this technology could lay the foundation for a future generation of in vivo recording implants.

Joint interval reliability for Markov systems with an application in transmission line reliability

Energy Technology Data Exchange (ETDEWEB)

Csenki, Attila [School of Computing and Mathematics, University of Bradford, Bradford, West Yorkshire, BD7 1DP (United Kingdom)]. E-mail: a.csenki@bradford.ac.uk

2007-06-15

We consider Markov reliability models whose finite state space is partitioned into the set of up states {sub U} and the set of down states {sub D}. Given a collection of k disjoint time intervals I{sub l}=[t{sub l},t{sub l}+x{sub l}], l=1,...,k, the joint interval reliability is defined as the probability of the system being in {sub U} for all time instances in I{sub 1} union ... union I{sub k}. A closed form expression is derived here for the joint interval reliability for this class of models. The result is applied to power transmission lines in a two-state fluctuating environment. We use the Linux versions of the free packages Maxima and Scilab in our implementation for symbolic and numerical work, respectively.

Synthesis and characterization particles of Ba{sub 0,50}Sr{sub 0,50}Co{sub 0,80}Fe{sub 0,20}O{sub 3} obtained by the citrate-EDTA technique; Sintese e caracterizacao de particulados de Ba{sub 0,50}Sr{sub 0,50}Co{sub 0,80}Fe{sub 0,20}O{sub 3} obtidos pela tecnica dos citratos-EDTA

Energy Technology Data Exchange (ETDEWEB)

Bonturim, E; Vargas, R A; Andreoli, M; Seo, E S.M., [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais

2010-07-01

The Ba{sub (1-x)}Sr{sub (x)}Co{sub (1-y)}Fe{sub (y)}O{sub (3)} (BSCF) has been studied as a cathode material for Intermediate Temperature Solid Oxide Fuel Cell, due to its better ion and electron conduction. This work aims to study the synthesis of the compound obtained from the citrate-EDTA technique. Thermogravimetric analysis indicated the formation of the compound above 800 deg C. The materials calcined at temperatures of 700, 800 and 900 deg C for 5 h showed cubic pseudo-perovskite structure, according to the literature. By analysis of X-ray fluorescence were obtained powders with nominal chemical composition in the temperature range studied. The micrographs obtained by SEM and particle size distribution analysis showed the formation of particle with diameters below 1 micron. (author)

Superconducting transistor

International Nuclear Information System (INIS)

Gray, K.E.

1978-01-01

A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

Band-to-band tunneling field effect transistor for low power logic and memory applications: Design, fabrication and characterization

Science.gov (United States)

Mookerjea, Saurabh A.

Over the past decade the microprocessor clock frequency has hit a plateau. The main reason for this has been the inability to follow constant electric field scaling, which requires the transistor supply voltage to be scaled down as the transistor dimensions are reduced. Scaling the supply voltage down reduces the dynamic power quadratically but increases the static leakage power exponentially due to non-scalability of threshold voltage of the transistor, which is required to maintain the same ON state performance. This limitation in supply voltage scaling is directly related to MOSFET's (Metal Oxide Semiconductor Field Effect Transistor) sub-threshold slope (SS) limitation of 60 mV/dec at room temperature. Thus novel device design/materials are required that would allow the transistor to switch with sub-threshold slopes steeper than 60 mV/dec at room temperature, thus facilitating supply voltage scaling. Recently, a new class of devices known as super-steep slope (SSswitching behavior of TFET is studied through mixed-mode numerical simulations. The significance of correct benchmarking methodology to estimate the effective drive current and capacitance in TFET is highlighted and compared with MOSFET. This is followed by the fabrication details of homo-junction TFET. Analysis of the electrical characteristics of homo-junction TFET gives key insight into its device operation and identifies the critical factors that impact its performance. In order to boost the ON current, the design and fabrication of hetero-junction TFET is also presented.

Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

International Nuclear Information System (INIS)

Ling, Yang; Gui-Zhou, Hu; Yue, Hao; Xiao-Hua, Ma; Si, Quan; Li-Yuan, Yang; Shou-Gao, Jiang

2010-01-01

This paper investigates the impact of electrical degradation and current collapse on different thickness SiN x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN x passivation located in the gate-drain region. As the thickness of SiN x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH 3 flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Vertical Bridgman growth and characterization of Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te (x=0.20, 0.30) single-crystal ingots

Energy Technology Data Exchange (ETDEWEB)

Bolotnikov, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, O. [Brookhaven National Lab. (BNL), Upton, NY (United States); Shcherbak, L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Fochuk, P. [Brookhaven National Lab. (BNL), Upton, NY (United States); Filonenko, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. [Brookhaven National Lab. (BNL), Upton, NY (United States)

2017-08-01

Solid-liquid phase transitions in Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided using the DTA results. Te inclusions (1-20 microns), typical for CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 10⁵ Ohm·cm. The optical transmission analysis demonstrated that the band-gap width of the investigated ingots increased from 1.77 to 1.88 eV with the increase of the MnTe content from 20 to 30 mol. %.

Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

Science.gov (United States)

Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

2016-04-01

Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer

Energy Technology Data Exchange (ETDEWEB)

Lv, Wenli; Tang, Yu [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Department of Physics, Shaoxing University, Shaoxing 312000 (China); Zhou, Maoqing; Luo, Xiao; Li, Yao; Zhong, Junkang; Sun, Lei [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China)

2015-08-31

Compared with organic photodiodes, photoresponsive organic field-effect transistors (photOFETs) exhibit higher sensitivity and lower noise. The performance of photOFETs based on conventional single layer structure is generally poor due to the low carrier mobility of the active channel materials. We demonstrate a high performance photOFET operating in red light with a structure of C60/neodymium phthalocyanine (NdPc{sub 2}) planar heterojunction. PhotOFETs based on single-layer NdPc{sub 2} and C60/NdPc{sub 2} heterojunction (denoted as NdPc{sub 2}-photOFETs and C60/NdPc{sub 2}-photOFETs, respectively) were fabricated and characterized. It is concluded that the photOFETs with heterojunction structure showed superior performance compared to that of single layer photOFETs. And for red light with a wavelength of 655 nm, C60/NdPc{sub 2}-photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W, which is approximately 62 times larger than that of NdPc{sub 2}-photOFETs under the same conditions. The high performance of C60/NdPc{sub 2}-photOFETs is attributed to its high light absorption coefficient, high exciton dissociation efficiency and high carrier mobility. - Highlights: • The mobility of light-sensitive organic materials is generally low. • We fabricated C60/NdPc{sub 2} photoresponsive organic field-effect transistors (photOFETs). • The performance of C60/NdPc{sub 2} photOFETs is superior than single-layer NdPc{sub 2} photOFETs. • C60/NdPc{sub 2} photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W for red light.

Fabrication of enhancement-mode AlGaN/GaN high electron mobility transistors using double plasma treatment

Energy Technology Data Exchange (ETDEWEB)

Lim, Jong-Won, E-mail: jwlim@etri.re.kr [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Ahn, Ho-Kyun; Kim, Seong-il; Kang, Dong-Min; Lee, Jong-Min; Min, Byoung-Gue; Lee, Sang-Heung; Yoon, Hyung-Sup; Ju, Chull-Won; Kim, Haecheon; Mun, Jae-Kyoung; Nam, Eun-Soo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Park, Hyung-Moo [Photonic/Wireless Convergence Components Dept., IT Materials and Components Lab., Electronics and Telecommunications Research Institute, Daejeon 305-700 (Korea, Republic of); Division of Electronics and Electrical Engineering, Dongguk University, Seoul (Korea, Republic of)

2013-11-29

We report the fabrication and DC and microwave characteristics of 0.5 μm AlGaN/GaN high electron mobility transistors using double plasma treatment process. Silicon nitride layers 700 and 150 Å thick were deposited by plasma-enhanced chemical vapor deposition at 260 °C to protect the device and to define the gate footprint. The double plasma process was carried out by two different etching techniques to obtain enhancement-mode AlGaN/GaN high electron mobility transistors with 0.5 μm gate lengths. The enhancement-mode AlGaN/GaN high electron mobility transistor was prepared in parallel to the depletion-mode AlGaN/GaN high electron mobility transistor device on one wafer. Completed double plasma treated 0.5 μm AlGaN/GaN high electron mobility transistor devices fabricated by dry etching exhibited a peak transconductance, gm, of 330 mS/mm, a breakdown voltage of 115 V, a current-gain cutoff frequency (f{sub T}) of 18 GHz, and a maximum oscillation frequency (f{sub max}) of 66 GHz. - Highlights: • The double plasma process was carried out by two different etching techniques. • Double plasma treated device exhibited a transconductance of 330 mS/mm. • Completed 0.5 μm gate device exhibited a current-gain cutoff frequency of 18 GHz. • The off-state breakdown voltage of 115 V for 0.5 μm gate device was obtained. • Continuous-wave output power density of 4.3 W/mm was obtained at 2.4 GHz.

Use of cermet thin film resistors with nitride passivated metal insulator field effect transistor

Science.gov (United States)

Brown, G. A.; Harrap, V.

1971-01-01

Film deposition of cermet resistors on same chip with metal nitride oxide silicon field effect transistors permits protection of contamination sensitive active devices from contaminants produced in cermet deposition and definition processes. Additional advantages include lower cost, greater reliability, and space savings.

Diode laser trabeculoplasty in open angle glaucoma: 50 micron vs. 100 micron spot size.

Science.gov (United States)

Veljko, Andreić; Miljković, Aleksandar; Babić, Nikola

2011-01-01

The study was aimed at evaluating the efficacy of diode laser trabeculoplsaty in lowering intraocular pressure in patients with both primary open-angle glaucoma and exfoliation glaucoma by using different size of laser spot. This six-month, unmasked, controlled, prospective study included sixty-two patients with the same number of eyes, who were divided into two groups. Trabeculoplasty was performed with 50 micron and 100 micron laser spot size in the group I and group II, respectively. Other laser parameters were the same for both groups: the wave length of 532 nm, 0.1 second single emission with the power of 600-1200 mW was applied on the 180 degrees of the trabeculum. The mean intraocular pressure decrease in the 50 micron group (group 1) on day 7 was 24% from the baseline and after six-month follow-up period the intraocular pressure decrease was 29.8% (p < 0.001). In the 100 micron group (group II), the mean intraocular pressure decrease on day 7 was 26.5% and after six months it was 39% (p < 0.001).

Test-retest reliability of the novel 5-HT{sub 1B} receptor PET radioligand [{sup 11}C]P943

Energy Technology Data Exchange (ETDEWEB)

Saricicek, Aybala [Yale University, Department of Psychiatry, New Haven, CT (United States); Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); Izmir Katip Celebi University, Department of Psychiatry, Izmir (Turkey); Chen, Jason; Ruf, Barbara [Yale University, Department of Psychiatry, New Haven, CT (United States); Planeta, Beata; Labaree, David; Gallezot, Jean-Dominique; Huang, Yiyun [Yale University, PET Center, Department of Diagnostic Radiology, New Haven, CT (United States); Subramanyam, Kalyani; Maloney, Kathleen [Yale University, Department of Psychiatry, New Haven, CT (United States); Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); Matuskey, David [Yale University, Department of Psychiatry, New Haven, CT (United States); Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); Yale University, PET Center, Department of Diagnostic Radiology, New Haven, CT (United States); Deserno, Lorenz [Charite - Universitaetsmedizin Berlin, Department of Psychiatry and Psychotherapy, Campus Charite Mitte, Berlin (Germany); Max-Planck-Institute for Human Cognitive and Brain Sciences, Leipzig, Berlin (Germany); Neumeister, Alexander [Yale University, Department of Psychiatry, New Haven, CT (United States); Mount Sinai School of Medicine, Department of Psychiatry, New York, NY (United States); VA Connecticut Healthcare System, Clinical Neuroscience Division, VA National Center for PTSD, West Haven, CT (United States); Krystal, John H. [Yale University, Department of Psychiatry, New Haven, CT (United States); Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); VA Connecticut Healthcare System, Clinical Neuroscience Division, VA National Center for PTSD, West Haven, CT (United States); Carson, Richard E. [Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); Bhagwagar, Zubin [Yale University, Department of Psychiatry, New Haven, CT (United States); Connecticut Mental Health Center, Abraham Ribicoff Research Facilities, New Haven, CT (United States); Bristol-Myers Squibb, Wallingford, CT (United States)

2014-11-27

[{sup 11}C]P943 is a novel, highly selective 5-HT{sub 1B} PET radioligand. The aim of this study was to determine the test-retest reliability of [{sup 11}C]P943 using two different modeling methods and to perform a power analysis with each quantification technique. Seven healthy volunteers underwent two PET scans on the same day. Regions of interest (ROIs) were the amygdala, hippocampus, pallidum, putamen, insula, frontal, anterior cingulate, parietal, temporal and occipital cortices, and cerebellum. Two multilinear radioligand quantification techniques were used to estimate binding potential: MA1, using arterial input function data, and the second version of the multilinear reference tissue model analysis (MRTM2), using the cerebellum as the reference region. Between-scan percent variability and intraclass correlation coefficients (ICC) were used to assess test-retest reliability. We also performed power analyses to determine the method that would allow the least number of subjects using within-subject or between-subject study designs. A voxel-wise ICC analysis for MRTM2 BP{sub ND} was performed for the whole brain and all the ROIs studied. Mean percent variability between two scans across regions ranged between 0.4 % and 12.4 % for MA1 BP{sub ND}, 0.5 % and 11.5 % for MA1 BP{sub P}, 16.7 % and 28.3 % for MA1 BP{sub F}, and between 0.2 % and 5.4 % for MRTM2 BP{sub ND}. The power analyses showed a greater number of subjects were required using MA1 BP{sub F} compared with other outcome measures for both within-subject and between-subject study designs. ICC values were the highest using MRTM2 BP{sub ND} and the lowest with MA1 BP{sub F} in ten ROIs. Small regions and regions with low binding had lower ICC values than large regions and regions with high binding. Reliable measures of 5-HT{sub 1B} receptor binding can be obtained using the novel PET radioligand [{sup 11}C]P943. Quantification of 5-HT{sub 1B} receptor binding with MRTM2 BP{sub ND} and with MA1 BP{sub P

Scaling of graphene integrated circuits.

Science.gov (United States)

Bianchi, Massimiliano; Guerriero, Erica; Fiocco, Marco; Alberti, Ruggero; Polloni, Laura; Behnam, Ashkan; Carrion, Enrique A; Pop, Eric; Sordan, Roman

2015-05-07

The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 μm gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Science.gov (United States)

Tabory, Charles N.; Young, Paul G.; Smith, Edwyn D.; Alterovitz, Samuel A.

1994-01-01

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Modulator reliability and bandwidth improvement: replacing tetrodes with MOSFETs

International Nuclear Information System (INIS)

Donaldson, A.R.

1982-01-01

Three types of power MOS field effect transistors were studied with the intent of replacing a parallel pair of vacuum tube tetrodes in a linear modulator. The tetrodes have the shortest lifetimes of any other tubes in the system. The FETs offer definite performance advantages when compared to bipolar transistors and definite cost advantages when compared to vacuum tubes. Replacement of the tetrodes does however require careful consideration of voltage, current and to a lesser extent bandwidth capability in order to enhance overall modulator reliability without compromising present performance

Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns

Science.gov (United States)

Payne, Stephen A.; Page, Ralph H.; Schaffers, Kathleen I.; Nostrand, Michael C.; Krupke, William F.; Schunemann, Peter G.

2000-01-01

The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.

Memristive device based on a depletion-type SONOS field effect transistor

Science.gov (United States)

Himmel, N.; Ziegler, M.; Mähne, H.; Thiem, S.; Winterfeld, H.; Kohlstedt, H.

2017-06-01

State-of-the-art SONOS (silicon-oxide-nitride-oxide-polysilicon) field effect transistors were operated in a memristive switching mode. The circuit design is a variation of the MemFlash concept and the particular properties of depletion type SONOS-transistors were taken into account. The transistor was externally wired with a resistively shunted pn-diode. Experimental current-voltage curves show analog bipolar switching characteristics within a bias voltage range of ±10 V, exhibiting a pronounced asymmetric hysteresis loop. The experimental data are confirmed by SPICE simulations. The underlying memristive mechanism is purely electronic, which eliminates an initial forming step of the as-fabricated cells. This fact, together with reasonable design flexibility, in particular to adjust the maximum R ON/R OFF ratio, makes these cells attractive for neuromorphic applications. The relative large set and reset voltage around ±10 V might be decreased by using thinner gate-oxides. The all-electric operation principle, in combination with an established silicon manufacturing process of SONOS devices at the Semiconductor Foundry X-FAB, promise reliable operation, low parameter spread and high integration density.

Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

International Nuclear Information System (INIS)

Lee, Youngmin; Lee, Sejoon; Im, Hyunsik; Hiramoto, Toshiro

2015-01-01

We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions

Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

Energy Technology Data Exchange (ETDEWEB)

Lee, Youngmin; Lee, Sejoon, E-mail: sejoon@dongguk.edu; Im, Hyunsik [Department of Semiconductor Science, Dongguk University-Seoul, Seoul 100-715 (Korea, Republic of); Hiramoto, Toshiro [Institute of Industrial Science, University of Tokyo, Tokyo 153-8505 (Japan)

2015-02-14

We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions.

Efficient CW diode-pumped Tm, Ho:YLF laser with tunability near 2.067 microns

Science.gov (United States)

Mcguckin, B. T.; Menzies, Robert T.

1992-01-01

A conversion efficiency of 42 percent and slope efficiency of approximately 60 percent relative to absorbed pump power are reported from a continuous wave diode-pumped Tm, Ho:YLF laser at 2 microns with output power of 84 mW at sub-ambient temperatures. The emission spectrum is etalon tunable over a range of 16/cm centered on 2.067 microns, with fine tuning capability of the transition frequency with crystal temperature at a measured rate of about -0.03/cm-K. The effective emission cross section is measured to be 5 x 10 exp -21 sq cm. These and other aspects of the laser performance are discussed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications.

Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

Energy Technology Data Exchange (ETDEWEB)

Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

2013-06-01

Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

International Nuclear Information System (INIS)

Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan; Park, Jozeph; Ahn, Byung Du; Kim, Hyun-Suk

2015-01-01

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping

Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Energy Technology Data Exchange (ETDEWEB)

Jang, Jun Tae; Kim, Dong Myong; Choi, Sung-Jin; Kim, Dae Hwan, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [School of Electrical Engineering, Kookmin University, Seoul 136-702 (Korea, Republic of); Park, Jozeph [Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of); Ahn, Byung Du [School of Electrical and Electronic Engineering, Yonsei University, Seodaemun-gu, Seoul 120-749 (Korea, Republic of); Kim, Hyun-Suk, E-mail: khs3297@cnu.ac.kr, E-mail: drlife@kookmin.ac.kr [Department of Materials Science and Engineering, Chungnam National University, Daejeon 305-764 (Korea, Republic of)

2015-03-23

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

High-performance vertical organic transistors.

Science.gov (United States)

Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

2013-11-11

Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A soft lithographic approach to fabricate InAs nanowire field-effect transistors

DEFF Research Database (Denmark)

Lee, S. H.; Shin, S.-H.; Madsen, Morten

2018-01-01

The epitaxial layer transfer process was previously introduced to integrate high-quality and ultrathin III-V compound semiconductor layers on any substrate. However, this technique has limitation for fabrication of sub-micron nanoribbons due to the diffraction limit of photolithography. In order ...

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

International Nuclear Information System (INIS)

Yeon Kwon, Jang; Kyeong Jeong, Jae

2015-01-01

This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Science.gov (United States)

Fan, Ching-Lin; Tseng, Fan-Ping; Tseng, Chiao-Yuan

2018-01-01

In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment) to 54.6 cm2/V∙s (with CF4 plasma treatment), which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability. PMID:29772767

Electrical Performance and Reliability Improvement of Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors with HfO2 Gate Dielectrics by CF4 Plasma Treatment

Directory of Open Access Journals (Sweden)

Ching-Lin Fan

2018-05-01

Full Text Available In this work, amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs with a HfO2 gate insulator and CF4 plasma treatment was demonstrated for the first time. Through the plasma treatment, both the electrical performance and reliability of the a-IGZO TFT with HfO2 gate dielectric were improved. The carrier mobility significantly increased by 80.8%, from 30.2 cm2/V∙s (without treatment to 54.6 cm2/V∙s (with CF4 plasma treatment, which is due to the incorporated fluorine not only providing an extra electron to the IGZO, but also passivating the interface trap density. In addition, the reliability of the a-IGZO TFT with HfO2 gate dielectric has also been improved by the CF4 plasma treatment. By applying the CF4 plasma treatment to the a-IGZO TFT, the hysteresis effect of the device has been improved and the device’s immunity against moisture from the ambient atmosphere has been enhanced. It is believed that the CF4 plasma treatment not only significantly improves the electrical performance of a-IGZO TFT with HfO2 gate dielectric, but also enhances the device’s reliability.

Synthesis, characterization and electrocatalytic properties of delafossite CuGaO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Jahangeer [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States); Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Mao, Yuanbing, E-mail: yuanbing.mao@utrgv.edu [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States)

2016-10-15

Delafossite CuGaO{sub 2} has been employed as photocatalysts for solar cells, but their electrocatalytic properties have not been extensively studied, especially no comparison among samples made by different synthesis routes. Herein, we first reported the successful synthesis of delafossite CuGaO{sub 2} particles with three different morphologies, i.e. nanocrystalline hexagons, sub-micron sized plates and micron–sized particles by a modified hydrothermal method at 190 °C for 60 h [1–3], a sono-chemical method followed by firing at 850 °C for 48 h, and a solid state route at 1150 °C, respectively. Morphology, composition and phase purity of the synthesized samples was confirmed by powder X-ray diffraction and Raman spectroscopic studies, and then their electrocatalytic performance as active and cost effective electrode materials to the oxygen and hydrogen evolution reactions in 0.5 M KOH electrolyte versus Ag/AgCl was investigated and compared under the same conditions for the first time. The nanocrystalline CuGaO{sub 2} hexagons show enhanced electrocatalytic activity than the counterpart sub-micron sized plates and micron-sized particles. - Graphical abstract: Representative delafossite CuGaO2 samples with sub-micron sized plate and nanocrystalline hexagon morphologies accompanying with chronoamperometric voltammograms for oxygen evolution reaction and hydrogen evolution reaction in 0.5 M KOH electrolyte after purged with N{sub 2} gas. - Highlights: • Delafossite CuGaO{sub 2} with three morphologies has been synthesized. • Phase purity of the synthesized samples was confirmed. • Comparison on their electrocatalytic properties was made for the first time. • Their use as electrodes for oxygen and hydrogen evolution reactions was evaluated. • Nanocrystalline CuGaO{sub 2} hexagons show highest electrocatalytic activity.

Investigation of surface related leakage current in AlGaN/GaN High Electron Mobility Transistors

Energy Technology Data Exchange (ETDEWEB)

Kaushik, J.K., E-mail: janeshkaushik@sspl.drdo.in [Solid State Physics Laboratory, Delhi 110054 (India); Balakrishnan, V.R.; Mongia, D.; Kumar, U.; Dayal, S. [Solid State Physics Laboratory, Delhi 110054 (India); Panwar, B.S. [Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016 (India); Muralidharan, R. [Indian Institute of Science, Bengaluru, Karnataka 560012 (India)

2016-08-01

This paper reports the study of surface-related mechanisms to explain the high reverse leakage current observed in the in-house fabricated Si{sub 3}N{sub 4} passivated AlGaN/GaN High Electron Mobility Transistors. We propose that the Si{sub 3}N{sub 4}/AlGaN interface in the un-gated regions provides an additional leakage path between the gate and source/drain and may constitute a large component of reverse current. This surface related leakage component of current exhibits both temperature and electric field dependence and its Arrhenius behavior has been experimentally verified using Conductance Deep Level Transient Spectroscopy and temperature dependent reverse leakage current measurements. A thin interfacial amorphous semiconductor layer formed due to inter diffusion at Si{sub 3}N{sub 4}/AlGaN interface has been presumed as the source for this surface related leakage. We, therefore, conclude that optimum Si{sub 3}N{sub 4} deposition conditions and careful surface preparation prior to passivation can limit the extent of surface leakage and can thus vastly improve the device performance. - Highlights: • Enhanced leakage in AlGaN/GaN High Electron Mobility Transistors after passivation • Experimental evidence of the presence of extrinsic traps at Si{sub 3}N{sub 4}/AlGaN interface • Electron hopping in shallower extended defects and band tail traps at the interface. • Reduction in current collapse due to the virtual gate inhibition by this conduction • However, limitation on the operating voltages due to decrease in breakdown voltage.

Silicon nanowire transistors

CERN Document Server

Bindal, Ahmet

2016-01-01

This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

Logarithmic current-measuring transistor circuits

DEFF Research Database (Denmark)

Højberg, Kristian Søe

1967-01-01

Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

Shootthrough fault protection system for bipolar transistors in a voltage source transistor inverter

International Nuclear Information System (INIS)

Wirth, W.F.

1982-01-01

Faulted bipolar transistors in a voltage source transistor inverter are protected against shootthrough fault current, from the filter capacitor of the d-c voltage source which drives the inverter over the d-c bus, by interposing a small choke in series with the filter capacitor to limit the rate of rise of that fault current while at the same time causing the d-c bus voltage to instantly drop to essentially zero volts at the beginning of a shootthrough fault. In this way, the load lines of the faulted transistors are effectively shaped so that they do not enter the second breakdown area, thereby preventing second breakdown destruction of the transistors

Photonic band gap materials: towards an all-optical transistor

Science.gov (United States)

Florescu, Marian

2002-05-01

The transmission of information as optical signals encoded on light waves traveling through optical fibers and optical networks is increasingly moving to shorter and shorter distance scales. In the near future, optical networking is poised to supersede conventional transmission over electric wires and electronic networks for computer-to-computer communications, chip-to-chip communications, and even on-chip communications. The ever-increasing demand for faster and more reliable devices to process the optical signals offers new opportunities in developing all-optical signal processing systems (systems in which one optical signal controls another, thereby adding "intelligence" to the optical networks). All-optical switches, two-state and many-state all-optical memories, all-optical limiters, all-optical discriminators and all-optical transistors are only a few of the many devices proposed during the last two decades. The "all-optical" label is commonly used to distinguish the devices that do not involve dissipative electronic transport and require essentially no electrical communication of information. The all-optical transistor action was first observed in the context of optical bistability [1] and consists in a strong differential gain regime, in which, for small variations in the input intensity, the output intensity has a very strong variation. This analog operation is for all-optical input what transistor action is for electrical inputs.

Sub-micron particle number size distribution characteristics at two urban locations in Leicester

Science.gov (United States)

Hama, Sarkawt M. L.; Cordell, Rebecca L.; Kos, Gerard P. A.; Weijers, E. P.; Monks, Paul S.

2017-09-01

The particle number size distribution (PNSD) of atmospheric particles not only provides information about sources and atmospheric processing of particles, but also plays an important role in determining regional lung dose. Owing to the importance of PNSD in understanding particulate pollution two short-term campaigns (March-June 2014) measurements of sub-micron PNSD were conducted at two urban background locations in Leicester, UK. At the first site, Leicester Automatic Urban Rural Network (AURN), the mean number concentrations of nucleation, Aitken, accumulation modes, the total particles, equivalent black carbon (eBC) mass concentrations were 2002, 3258, 1576, 6837 # cm-3, 1.7 μg m-3, respectively, and at the second site, Brookfield (BF), were 1455, 2407, 874, 4737 # cm-3, 0.77 μg m-3, respectively. The total particle number was dominated by the nucleation and Aitken modes, with both consisting of 77%, and 81% of total number concentrations at AURN and BF sites, respectively. This behaviour could be attributed to primary emissions (traffic) of ultrafine particles and the temporal evolution of mixing layer. The size distribution at the AURN site shows bimodal distribution at 22 nm with a minor peak at 70 nm. The size distribution at BF site, however, exhibits unimodal distribution at 35 nm. This study has for the first time investigated the effect of Easter holiday on PNSD in UK. The temporal variation of PNSD demonstrated a good degree of correlation with traffic-related pollutants (NOX, and eBC at both sites). The meteorological conditions, also had an impact on the PNSD and eBC at both sites. During the measurement period, the frequency of NPF events was calculated to be 13.3%, and 22.2% at AURN and BF sites, respectively. The average value of formation and growth rates of nucleation mode particles were 1.3, and 1.17 cm-3 s-1 and 7.42, and 5.3 nm h-1 at AURN, and BF sites, respectively. It can suggested that aerosol particles in Leicester originate mainly

Very high-cycle fatigue failure in micron-scale polycrystalline silicon films : Effects of environment and surface oxide thickness

NARCIS (Netherlands)

Alsem, D. H.; Boyce, B. L.; Stach, E. A.; De Hosson, J. Th. M.; Ritchie, R. O.

2007-01-01

Fatigue failure in micron-scale polycrystalline silicon structural films, a phenomenon that is not observed in bulk silicon, can severely impact the durability and reliability of microelectromechanical system devices. Despite several studies on the very high-cycle fatigue behavior of these films (up

Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

Science.gov (United States)

McCarthy, Mitchell

The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

A High-Voltage Level Tolerant Transistor Circuit

NARCIS (Netherlands)

Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

2001-01-01

A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

Characteristics of thin-film transistors based on silicon nitride passivation by excimer laser direct patterning

International Nuclear Information System (INIS)

Chen, Chao-Nan; Huang, Jung-Jie

2013-01-01

This study explored the removal of silicon nitride using KrF laser ablation technology with a high threshold fluence of 990 mJ/cm 2 . This technology was used for contact hole patterning to fabricate SiN x -passivation-based amorphous-silicon thin films in a transistor device. Compared to the photolithography process, laser direct patterning using KrF laser ablation technology can reduce the number of process steps by at least three. Experimental results showed that the mobility and threshold voltages of thin film transistors patterned using the laser process were 0.16 cm 2 /V-sec and 0.2 V, respectively. The device performance and the test results of gate voltage stress reliability demonstrated that laser direct patterning is a promising alternative to photolithography in the panel manufacturing of thin-film transistors for liquid crystal displays. - Highlights: ► KrF laser ablation technology is used to remove silicon nitride. ► A simple method for direct patterning contact-hole in thin-film-transistor device. ► Laser technology reduced processing by at least three steps

Diode, transistor & fet circuits manual

CERN Document Server

Marston, R M

2013-01-01

Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

Suppressing the memory state of floating gate transistors with repeated femtosecond laser backside irradiations

Science.gov (United States)

Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David

2017-04-01

We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Directory of Open Access Journals (Sweden)

Fan Ren

2012-11-01

Full Text Available We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs as well as Heterojunction Bipolar Transistors (HBTs in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate, and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

Degradation Mechanisms for GaN and GaAs High Speed Transistors

Science.gov (United States)

Cheney, David J.; Douglas, Erica A.; Liu, Lu; Lo, Chien-Fong; Gila, Brent P.; Ren, Fan; Pearton, Stephen J.

2012-01-01

We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the AlGaAs/GaAs materials systems. Because of the complex nature and multi-faceted operation modes of these devices, reliability studies must go beyond the typical Arrhenius accelerated life tests. We review the electric field driven degradation in devices with different gate metallization, device dimensions, electric field mitigation techniques (such as source field plate), and the effect of device fabrication processes for both DC and RF stress conditions. We summarize the degradation mechanisms that limit the lifetime of these devices. A variety of contact and surface degradation mechanisms have been reported, but differ in the two device technologies: For HEMTs, the layers are thin and relatively lightly doped compared to HBT structures and there is a metal Schottky gate that is directly on the semiconductor. By contrast, the HBT relies on pn junctions for current modulation and has only Ohmic contacts. This leads to different degradation mechanisms for the two types of devices.

On theory of single-molecule transistor

International Nuclear Information System (INIS)

Tran Tien Phuc

2009-01-01

The results of the study on single-molecule transistor are mainly investigated in this paper. The structure of constructed single-molecule transistor is similar to a conventional MOSFET. The conductive channel of the transistors is a single-molecule of halogenated benzene derivatives. The chemical simulation software CAChe was used to design and implement for the essential parameter of the molecules utilized as the conductive channel. The GUI of Matlab has been built to design its graphical interface, calculate and plot the output I-V characteristic curves for the transistor. The influence of temperature, length and width of the conductive channel, and gate voltage is considered. As a result, the simulated curves are similar to the traditional MOSFET's. The operating temperature range of the transistors is wider compared with silicon semiconductors. The supply voltage for transistors is only about 1 V. The size of transistors in this research is several nanometers.

Three dimensional graphene transistor for ultra-sensitive pH sensing directly in biological media

Energy Technology Data Exchange (ETDEWEB)

Ameri, Shideh Kabiri; Singh, Pramod K.; Sonkusale, Sameer R., E-mail: sameer@ece.tufts.edu

2016-08-31

In this work, pH sensing directly in biological media using three dimensional liquid gated graphene transistors is presented. The sensor is made of suspended network of graphene coated all around with thin layer of hafnium oxide (HfO{sub 2}), showing high sensitivity and sensing beyond the Debye-screening limit. The performance of the pH sensor is validated by measuring the pH of isotonic buffered, Dulbecco's phosphate buffered saline (DPBS) solution, and of blood serum derived from Sprague-Dawley rat. The pH sensor shows high sensitivity of 71 ± 7 mV/pH even in high ionic strength media with molarities as high as 289 ± 1 mM. High sensitivity of this device is owing to suspension of three dimensional graphene in electrolyte which provides all around liquid gating of graphene, leading to higher electrostatic coupling efficiency of electrolyte to the channel and higher gating control of transistor channel by ions in the electrolyte. Coating graphene with hafnium oxide film (HfO{sub 2}) provides binding sites for hydrogen ions, which results in higher sensitivity and sensing beyond the Debye-screening limit. The 3D graphene transistor offers the possibility of real-time pH measurement in biological media without the need for desaltation or sample preparation. - Graphical abstract: (a) Test setup – Direct rat blood serum pH measurements (b) Measured transfer characteristics of the transistor for blood serum at different pH values, and (c) Zoomed in version around direct point. - Highlights: • A three-dimensional graphene transistor for pH sensing is presented. • It shows sensitivity of 71 ± 7 mV/pH even in high ionic strength media. • High sensitivity attributed to 3D foam structure and all-around liquid gating. • Enables real-time pH sensing in biological media without need of desaltation.

Dosimetric properties of MOS transistors

International Nuclear Information System (INIS)

Frank, H.; Petr, I.

1977-01-01

The structure of MOS transistors is described and their characteristics given. The experiments performed and data in the literature show the following dosimetric properties of MOS transistors: while for low gamma doses the transistor response to exposure is linear, it shows saturation for higher doses (exceeding 10 3 Gy in tissue). The response is independent of the energy of radiation and of the dose rate (within 10 -2 to 10 5 Gy/s). The spontaneous reduction with time of the spatial charge captured by the oxide layer (fading) is small and acceptable from the point of view of dosimetry. Curves are given of isochronous annealing of the transistors following irradiation with 137 Cs and 18 MeV electrons for different voltages during irradiation. The curves show that in MOS transistors irradiated with high-energy electrons the effect of annealing is less than in transistors irradiated with 137 Cs. In view of the requirement of using higher temperatures (approx. 400 degC) for the complete ''erasing'' of the captured charge, unsealed systems must be used for dosimetric purposes. The effect was also studied of neutron radiation, proton radiation and electron radiation on the MOS transistor structure. For MOS transistor irradiation with 14 MeV neutrons from a neutron generator the response was 4% of that for gamma radiation at the same dose equivalent. The effect of proton radiation was studied as related to the changes in MOS transistor structure during space flights. The response curve shapes are similar to those of gamma radiation curves. The effect of electron radiation on the MOS structure was studied by many authors. The experiments show that for each thickness of the SiO 2 layer an electron energy exists at which the size of the charge captured in SiO 2 is the greatest. All data show that MOS transistors are promising for radiation dosimetry. The main advantage of MOS transistors as gamma dosemeters is the ease and speed of evaluation, low sensitivity to neutron

Nanomechanical testing of circular freestanding polymer films with sub-micron thickness

International Nuclear Information System (INIS)

Maner, Kyle C.; Begley, Matthew R.; Oliver, Warren C.

2004-01-01

This paper describes techniques to create freestanding films over perfectly circular spans (windows) and measure their mechanical properties using instrumented nanoindentation. Test samples were created by spin-casting polymer films over glass plates with embedded fibers, which were subsequently etched using a relatively weak acid to leave freestanding circular spans. The freestanding spans were tested using an instrumented nanoindenter over a wide range of applied loads and displacements. Material properties can be extracted from measured load-deflection responses using straightforward models for point-loads on circular plates or membranes. Results are presented for poly(methyl methacrylate) and poly(2,6,dimethyl,1,4,phenylene ether) films with thickness ranging from 350 to 750 nm. The properties derived from freestanding tests are compared with traditional nanoindentation of films on intact substrates. The freestanding approach has key advantages for characterizing micron-scale behavior of compliant materials, notably greater ease and applicability of sample preparation over other micro-fabrication techniques and straightforward analytical or numerical models

Colour tuneable light-emitting transistor

Energy Technology Data Exchange (ETDEWEB)

Feldmeier, Eva J.; Melzer, Christian; Seggern, Heinz von [Electronic Materials Department, Institute of Materials Science, Technische Universitaet Darmstadt (Germany)

2010-07-01

In recent years the interest in ambipolar organic light-emitting field-effect transistors has increased steadily as the devices combine switching behaviour of transistors with light emission. Usually, small molecules and polymers with a band gap in the visible spectral range serve as semiconducting materials. Mandatory remain balanced injection and transport properties for both charge carrier types to provide full control of the spatial position of the recombination zone of electrons and holes in the transistor channel via the applied voltages. As will be presented here, the spatial control of the recombination zone opens new possibilities towards light-emitting devices with colour tuneable emission. In our contribution an organic light-emitting field-effect transistors is presented whose emission colour can be changed by the applied voltages. The organic top-contact field-effect transistor is based on a parallel layer stack of acenes serving as organic transport and emission layers. The transistor displays ambipolar characteristics with a narrow recombination zone within the transistor channel. During operation the recombination zone can be moved by a proper change in the drain and gate bias from one organic semiconductor layer to another one inducing a change in the emission colour. In the presented example the emission maxima can be switched from 530 nm to 580 nm.

Dosimetric properties of MOS transistors

International Nuclear Information System (INIS)

Peter, I.; Frank, G.

1977-01-01

The performance of MOS transistors as gamma detectors has been tested. The dosimeter sensitivity has proved to be independent on the doses ranging from 10 3 to 10 6 R, and gamma energy of 137 Cs, 60 Co - sources and 5 - 18 MeV electrons. Fading of the space charge trapped by the SiO 2 layer of the transistor has appeared to be neglegible at room temperature after 400 hrs. The isochronous annealing in the temperature range of 40-260 deg C had a more substantial effect on the space charge of the transistor irradiated with 18 MeV electrons than on the 137 Cs gamma-irradiated transistors. This proved a repeated use of γ-dosemeters. MOS transistors are concluded to be promising for gamma dosimetry [ru

Chemical synthesis of Fe/Fe{sub 3}O{sub 4} core-shell composites with enhanced soft magnetic performances

Energy Technology Data Exchange (ETDEWEB)

Yang, Bai, E-mail: byang@buaa.edu.cn [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Li, Xiaopan [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Yang, Xueying [Hi-tech Industry Standardization Institute, Hubei Standardization and Quality Institution, Wuhan 430061 (China); Yu, Ronghai [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China)

2017-04-15

The large-grain Fe/Fe{sub 3}O{sub 4} composite particles with average size of about 1.2 µm have been fabricated by a facile one-step solvothermal method. The formation of high-purity Fe{sub 3}O{sub 4} as the shells (90.14 wt%) and α-Fe as the cores (9.86 wt%) in the Fe/Fe{sub 3}O{sub 4} composites leads to their high saturation magnetization of 119.6 A m{sup 2} Kg{sup -1}. Very low coercivity of 30 Oe is obtained in the composites due to their uniform cubic-shaped morphologies. Compared with Fe-based nanosized particles, these micron-sized magnetic Fe/Fe{sub 3}O{sub 4} composites exhibit high air stability and good compactibility with high compressed density of 5.9 g cm{sup -3}. The fully compacted sample shows good soft magnetic properties including high magnetic induction B{sub 1.2k} {sub (H=1200} {sub A/m)} of 540 mT and good frequency-dependent magnetic properties with operating frequency up to 50 MHz superior to those of the most traditional soft magnetic ferrites, which promotes their potential applications in high-frequency and high-power magnetic devices. - Highlights: • Micron-sized Fe/Fe{sub 3}O{sub 4} composites are prepared by a one-step solvothermal method. • High saturation magnetization and low coercivity are obtained in the composites. • Good air stability and high bulk density occurs in the composites. • High magnetic induction and good frequency-dependent properties are achieved.

MICRON-SIZED POLYMER PARTICLES FROM TANZANIAN ...

African Journals Online (AJOL)

Micron sized polymeric particles were prepared from cashew nut shell liquid and subsequently functionalized to produce micron-sized carboxylated cation exchange resin (MCCER). By titrimetry and analytical procedures employing atomic absorption spectrometry, an assessment of the cation exchange capability of the ...

The woven fiber organic electrochemical transistors based on polypyrrole nanowires/reduced graphene oxide composites for glucose sensing.

Science.gov (United States)

Wang, Yuedan; Qing, Xing; Zhou, Quan; Zhang, Yang; Liu, Qiongzhen; Liu, Ke; Wang, Wenwen; Li, Mufang; Lu, Zhentan; Chen, Yuanli; Wang, Dong

2017-09-15

Novel woven fiber organic electrochemical transistors based on polypyrrole (PPy) nanowires and reduced graphene oxide (rGO) have been prepared. SEM revealed that the introduction of rGO nanosheets could induce the growth and increase the amount of PPy nanowires. Moreover, it could enhance the electrical performance of fiber transistors. The hybrid transistors showed high on/off ratio of 10 2 , fast switch speed, and long cycling stability. The glucose sensors based on the fiber organic electrochemical transistors have also been investigated, which exhibited outstanding sensitivity, as high as 0.773 NCR/decade, with a response time as fast as 0.5s, a linear range of 1nM to 5μM, a low detection concentration as well as good repeatability. In addition, the glucose could be selectively detected in the presence of ascorbic acid and uric acid interferences. The reliability of the proposed glucose sensor was evaluated in real samples of rabbit blood. All the results indicate that the novel fiber transistors pave the way for portable and wearable electronics devices, which have a promising future for healthcare and biological applications. Copyright © 2017 Elsevier B.V. All rights reserved.

Ionizing/displacement synergistic effects induced by gamma and neutron irradiation in gate-controlled lateral PNP bipolar transistors

Energy Technology Data Exchange (ETDEWEB)

Wang, Chenhui, E-mail: wangchenhui@nint.ac.cn [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Chen, Wei; Yao, Zhibin; Jin, Xiaoming; Liu, Yan; Yang, Shanchao [State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, P.O. Box 69-10, Xi’an 710024 (China); Wang, Zhikuan [State Key Laboratory of Analog Integrated Circuit, Chongqing 400060 (China)

2016-09-21

A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to do experimental validations and studies on the ionizing/displacement synergistic effects in the lateral PNP bipolar transistor. The individual and mixed irradiation experiments of gamma rays and neutrons are accomplished on the transistors. The common emitter current gain, gate sweep characteristics and sub-threshold sweep characteristics are measured after each exposure. The results indicate that under the sequential irradiation of gamma rays and neutrons, the response of the gate-controlled lateral PNP bipolar transistor does exhibit ionizing/displacement synergistic effects and base current degradation is more severe than the simple artificial sum of those under the individual gamma and neutron irradiation. Enough attention should be paid to this phenomenon in radiation damage evaluation. - Highlights: • A kind of gate-controlled lateral PNP bipolar transistor has been specially designed to facilitate the analysis of ionizing/displacement synergistic effects induced by the mixed irradiation of gamma and neutron. • The difference between ionizing/displacement synergistic effects and the simple sum of TID and displacement effects is analyzed. • The physical mechanisms of synergistic effects are explained.

Strain characterization of fin-shaped field effect transistors with SiGe stressors using nanobeam electron diffraction

Energy Technology Data Exchange (ETDEWEB)

Kim, Sun-Wook; Byeon, Dae-Seop; Jang, Hyunchul; Koo, Sang-Mo; Ko, Dae-Hong, E-mail: dhko@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, Seoul 120-749 (Korea, Republic of); Lee, Hoo-Jeong, E-mail: hlee@skku.edu [Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-08-25

This study undertook strain analysis on fin-shaped field effect transistor structures with epitaxial Si{sub 1−x}Ge{sub x} stressors, using nano-beam electron diffraction and finite elements method. Combining the two methods disclosed dynamic strain distribution in the source/drain and channel region of the fin structure, and the effects of dimensional factors such as the stressor thickness and fin width, offering valuable information for device design.

Electron irradiation of power transistors

International Nuclear Information System (INIS)

Hower, P.L.; Fiedor, R.J.

1982-01-01

A method for reducing storage time and gain parameters in a semiconductor transistor includes the step of subjecting the transistor to electron irradiation of a dosage determined from measurements of the parameters of a test batch of transistors. Reduction of carrier lifetime by proton bombardment and gold doping is mentioned as an alternative to electron irradiation. (author)

Monolithic integrated photoreceiver for 1.3--1.55-μm wavelengths: Association of a Schottky photodiode and a field-effect transistor on GaInP-GaInAs heteroepitaxy

International Nuclear Information System (INIS)

Therani, A.H.; Decoster, D.; Vilcot, J.P.; Razeghi, M.

1988-01-01

We present a monolithic integrated circuit associating a Schottky photodiode and a field-effect transistor which has been fabricated, for the first time, on Ga/sub 0.49/In/sub 0.51/P/Ga/sub 0.47/In/sub 0.53/As strained heteroepitaxial material. Static, dynamic, and noise properties of the Schottky photodiode, the field-effect transistor, and the integrated circuit have been investigated and are reported. As an example, dynamic responsivity up to 50 A/W can be achieved at 1.3-μm wavelength for the integrated photoreceiver. The performance of the device is discussed, taking into account the integrated circuit design and the main characteristics of the material

Dynamical heat transport amplification in a far-field thermal transistor of VO{sub 2} excited with a laser of modulated intensity

Energy Technology Data Exchange (ETDEWEB)

Ordonez-Miranda, Jose, E-mail: jose.ordonez@cnrs.pprime.fr; Ezzahri, Younès; Drevillon, Jérémie; Joulain, Karl [Institut Pprime, CNRS, Université de Poitiers, ISAE-ENSMA, F-86962 Futuroscope Chasseneuil (France)

2016-05-28

Far-field radiative heat transport in a thermal transistor made up of a vanadium dioxide base excited with a laser of modulated intensity is analytically studied and optimized. This is done by solving the equation of energy conservation for the steady-state and modulated components of the temperature and heat fluxes that the base exchanges with the collector and emitter. The thermal bistability of VO{sub 2} is used to find an explicit condition on the laser intensity required to maximize these heat fluxes to values higher than the incident flux. For a 1 μm-thick base heated with a modulation frequency of 0.5 Hz, it is shown that both the DC and AC components of the heat fluxes are about 4 times the laser intensity, while the AC temperature remains an order of magnitude smaller than the DC one at around 343 K. Higher AC heat fluxes are obtained for thinner bases and/or lower frequencies. Furthermore, we find that out of the bistability temperatures associated with the dielectric-to-metal and metal-to-dielectric transitions of VO{sub 2}, the amplification of the collector-to-base and base-to-emitter heat fluxes is still possible, but at modulation frequencies lower than 0.1 Hz.

Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

International Nuclear Information System (INIS)

Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

2014-01-01

We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

The point of practical use for the transistor circuit

International Nuclear Information System (INIS)

1996-01-01

This is comprised of eight chapters and goes as follows; what is transistor? the first step for use of transistor such as connection between power and signal source, static characteristic of transistor and equivalent circuit of transistor, design of easy small-signal amplifier circuit, design for amplification of electric power and countermeasure for prevention of trouble, transistor concerned interface, transistor circuit around micro computer, transistor in active use of FET and power circuit and transistor. It has an appendix on transistor and design of bias of FET circuits like small signal transistor circuit and FET circuit.

Silicon on insulator self-aligned transistors

Science.gov (United States)

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

Physical limits of silicon transistors and circuits

International Nuclear Information System (INIS)

Keyes, Robert W

2005-01-01

A discussion on transistors and electronic computing including some history introduces semiconductor devices and the motivation for miniaturization of transistors. The changing physics of field-effect transistors and ways to mitigate the deterioration in performance caused by the changes follows. The limits of transistors are tied to the requirements of the chips that carry them and the difficulties of fabricating very small structures. Some concluding remarks about transistors and limits are presented

Dynamic response of carbon nanotube field-effect transistors analyzed by S-parameters measurement

Energy Technology Data Exchange (ETDEWEB)

Bethoux, J.-M. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Happy, H. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France)]. E-mail: henri.happy@iemn.univ-lille1.fr; Dambrine, G. [Institut d' Electronique, de Microelectronique et de Nanotechnologie, C.N.R.S. U.M.R. 8520, BP 60069, F-59652, Villeneuve d' Ascq Cedex (France); Derycke, V. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Goffman, M. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France); Bourgoin, J.-P. [Laboratoire d' Electronique Moleculaire, SPEC, Commissariat a l' Energie Atomique, Saclay F-91191, Gif sur Yvette Cedex (France)

2006-12-15

Carbon nanotube field-effect transistors (CN-FET) with a metallic back gate have been fabricated. By assembling a number of CNs in parallel, driving currents in the mA range have been obtained. The dynamic response of the CN-FETs has been investigated through S-parameters measurements. A current gain (|H {sub 21}|{sup 2}) cut-off frequency (f {sub t}) of 8 GHz, and a maximum stable gain (MSG) value of 10 dB at 1 GHz have been obtained. The extraction of an equivalent circuit is proposed.

Transport properties of hydrogen passivated silicon nanotubes and silicon nanotube field effect transistors

KAUST Repository

Montes Muñoz, Enrique

2017-01-24

We investigate the electronic transport properties of silicon nanotubes attached to metallic electrodes from first principles, using density functional theory and the non-equilibrium Green\\'s function method. The influence of the surface termination is studied as well as the dependence of the transport characteristics on the chirality, diameter, and length. Strong electronic coupling between nanotubes and electrodes is found to be a general feature that results in low contact resistance. The conductance in the tunneling regime is discussed in terms of the complex band structure. Silicon nanotube field effect transistors are simulated by applying a uniform potential gate. Our results demonstrate very high values of transconductance, outperforming the best commercial silicon field effect transistors, combined with low values of sub-threshold swing.

Large scale integration of flexible non-volatile, re-addressable memories using P(VDF-TrFE) and amorphous oxide transistors

International Nuclear Information System (INIS)

Gelinck, Gerwin H; Cobb, Brian; Van Breemen, Albert J J M; Myny, Kris

2015-01-01

Ferroelectric polymers and amorphous metal oxide semiconductors have emerged as important materials for re-programmable non-volatile memories and high-performance, flexible thin-film transistors, respectively. However, realizing sophisticated transistor memory arrays has proven to be a challenge, and demonstrating reliable writing to and reading from such a large scale memory has thus far not been demonstrated. Here, we report an integration of ferroelectric, P(VDF-TrFE), transistor memory arrays with thin-film circuitry that can address each individual memory element in that array. n-type indium gallium zinc oxide is used as the active channel material in both the memory and logic thin-film transistors. The maximum process temperature is 200 °C, allowing plastic films to be used as substrate material. The technology was scaled up to 150 mm wafer size, and offers good reproducibility, high device yield and low device variation. This forms the basis for successful demonstration of memory arrays, read and write circuitry, and the integration of these. (paper)

Dielectric relaxation dependent memory elements in pentacene/[6,6]-phenyl-C61-butyric acid methyl ester bi-layer field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Park, Byoungnam

2015-03-02

We fabricate a pentacene/[6,6]-phenyl-C{sub 61}-butyric acid methyl ester (PCBM) bi-layer field effect transistor (FET) featuring large hysteresis that can be used as memory elements. Intentional introduction of excess electron traps in a PCBM layer by exposure to air caused large hysteresis in the FET. The memory window, characterized by the threshold voltage difference, increased upon exposure to air and this is attributed to an increase in the number of electron trapping centers and (or) an increase in the dielectric relaxation time in the underlying PCBM layer. Decrease in the electron conduction in the PCBM close to the SiO{sub 2} gate dielectric upon exposure to air is consistent with the increase in the dielectric relaxation time, ensuring that the presence of large hysteresis in the FET originates from electron trapping at the PCBM not at the pentacene. - Highlights: • Charge trapping-induced memory effect was clarified using transistors. • The memory window can be enhanced by controlling charge trapping mechanism. • Memory transistors can be optimized by controlling dielectric relaxation time.

Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

Energy Technology Data Exchange (ETDEWEB)

Greene-Diniz, Gabriel; Greer, J. C. [Tyndall National Institute, Lee Maltings, Prospect Row, Cork (Ireland); Fischetti, M. V. [Department of Materials Science and Engineering, University of Texas at Dallas, 800 West Campbell Road RL10, Richardson, Texas 75080 (United States)

2016-02-07

Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energy with respect to the conduction-band minimum at the Γ-point.

A sub k{sub B}T/q semimetal nanowire field effect transistor

Energy Technology Data Exchange (ETDEWEB)

Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C., E-mail: Jim.Greer@Tyndall.ie [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland)

2016-08-08

The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a “Boltzmann tyranny” limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

Science.gov (United States)

Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

2010-01-01

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

Potential of carbon nanotube field effect transistors for analogue circuits

KAUST Repository

Hayat, Khizar; Cheema, Hammad; Shamim, Atif

2013-01-01

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

Potential of carbon nanotube field effect transistors for analogue circuits

KAUST Repository

Hayat, Khizar

2013-05-11

This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET\\'s potential for implementing analogue circuits in the mm-wave and sub-terahertz range. The latest CNFET lithographic dimensions place it at-par with complementary metal oxide semiconductor in terms of current handling capability, whereas the forecasted improvement in the lithography enables the CNFETs to handle more than twice the current of MOSFETs. The comparison of RF parameters shows superior performance of CNFETs with a g m , f T and f max of 2.7, 2.6 and 4.5 times higher, respectively. MOSFET- and CNFET-based inverter, three-stage ring oscillator and LC oscillator have been designed and compared as well. The CNFET-based inverters are found to be ten times faster, the ring oscillator demonstrates three times higher oscillation frequency and CNFET-based LC oscillator also shows improved performance than its MOSFET counterpart.

Intense beams at the micron level for the Next Linear Collider

International Nuclear Information System (INIS)

Seeman, J.T.

1991-08-01

High brightness beams with sub-micron dimensions are needed to produce a high luminosity for electron-positron collisions in the Next Linear Collider (NLC). To generate these small beam sizes, a large number of issues dealing with intense beams have to be resolved. Over the past few years many have been successfully addressed but most need experimental verification. Some of these issues are beam dynamics, emittance control, instrumentation, collimation, and beam-beam interactions. Recently, the Stanford Linear Collider (SLC) has proven the viability of linear collider technology and is an excellent test facility for future linear collider studies

Size effect of primary Y{sub 2}O{sub 3} additions on the characteristics of the nanostructured ferritic ODS alloys: Comparing as-milled and as-milled/annealed alloys using S/TEM

Energy Technology Data Exchange (ETDEWEB)

Saber, Mostafa, E-mail: msaber@ncsu.edu; Xu, Weizong; Li, Lulu; Zhu, Yuntian; Koch, Carl C.; Scattergood, Ronald O.

2014-09-15

The need for providing S/TEM evidence to clarify the mechanisms of nano-scale precipitate formation was the motivation of this investigation. In this study, an Fe–14Cr–0.4Ti alloy was ball-milled with different amounts of Y{sub 2}O{sub 3} content up to 10 wt.%, and then annealed at temperatures up to 1100 °C. Micron-size Y{sub 2}O{sub 3} particles were substituted for the nano-size counterpart to elucidate the mechanism of oxide precipitate formation. The S/TEM studies revealed that the microstructure of the alloy with 10 wt.% yttria contained amorphous undissolved Y{sub 2}O{sub 3} after ball milling, while a small part of the initial oxide particles were dissolved into the solid solution. Consequently, when the amount of yttria was reduced to 1 wt.%, the amorphous phase of the yttria vanished and the whole content of Y{sub 2}O{sub 3} was dissolved into the BCC solid solution. Defect analysis of precipitates on the annealed samples via S/TEM and micro-hardness studies revealed that the use of micron-size primary oxide particles can produce nano-size precipitates, stable up to temperatures as high as 1100 °C, and uniformly distributed throughout the microstructure. This study indicates that the use of high energy ball milling along with micron-size primary oxide particles can lead to nanostructured ferritic ODS alloys without the use of nano-size primary oxide additions.

Screen printing as a scalable and low-cost approach for rigid and flexible thin-film transistors using separated carbon nanotubes.

Science.gov (United States)

Cao, Xuan; Chen, Haitian; Gu, Xiaofei; Liu, Bilu; Wang, Wenli; Cao, Yu; Wu, Fanqi; Zhou, Chongwu

2014-12-23

Semiconducting single-wall carbon nanotubes are very promising materials in printed electronics due to their excellent mechanical and electrical property, outstanding printability, and great potential for flexible electronics. Nonetheless, developing scalable and low-cost approaches for manufacturing fully printed high-performance single-wall carbon nanotube thin-film transistors remains a major challenge. Here we report that screen printing, which is a simple, scalable, and cost-effective technique, can be used to produce both rigid and flexible thin-film transistors using separated single-wall carbon nanotubes. Our fully printed top-gated nanotube thin-film transistors on rigid and flexible substrates exhibit decent performance, with mobility up to 7.67 cm2 V(-1) s(-1), on/off ratio of 10(4)∼10(5), minimal hysteresis, and low operation voltage (transistors (bent with radius of curvature down to 3 mm) and driving capability for organic light-emitting diode have been demonstrated. Given the high performance of the fully screen-printed single-wall carbon nanotube thin-film transistors, we believe screen printing stands as a low-cost, scalable, and reliable approach to manufacture high-performance nanotube thin-film transistors for application in display electronics. Moreover, this technique may be used to fabricate thin-film transistors based on other materials for large-area flexible macroelectronics, and low-cost display electronics.

Power transistor module for high current applications

International Nuclear Information System (INIS)

Cilyo, F.F.

1975-01-01

One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

Use of a Combined SpO<sub>2sub>/PtcCO>2sub> Sensor in the Delivery Room

Directory of Open Access Journals (Sweden)

Costantino Romagnoli

2012-08-01

Full Text Available Arterial oxygen saturation (SaO<sub>2sub> and partial arterial pressure of carbon dioxide (PaCO<sub>2sub> are important respiratory parameters in critically ill neonates. A sensor combining a pulse oximeter with the Stow-Severinghaus electrode, required for the measurement of peripheral oxygen saturation (SpO<sub>2sub> and transcutaneous partial pressure of carbon dioxide (PtcCO<sub>2sub>, respectively, has been recently used in neonatal clinical practice (TOSCA^500ÒRadiometer. We evaluated TOSCA usability and reliability in the delivery room (DR, throughout three different periods, on term, late-preterm, and preterm neonates. During the first period (period A, 30 healthy term neonates were simultaneously monitored with both TOSCA and a MASIMO pulse oximeter. During the second period (period B, 10 healthy late-preterm neonates were monitored with both TOSCA and a transcutaneous device measuring PtcCO<sub>2sub> (TINA^Ò TCM3, Radiometer. During the third period (period C, 15 preterm neonates were monitored with TOSCA and MASIMO after birth, during stabilization, and during transport to the neonatal intensive care unit (NICU. Blood gas analyses were performed to compare transcutaneous and blood gas values. TOSCA resulted easily and safely usable in the DR, allowing reliable noninvasive SaO<sub>2sub> estimation. Since PtcCO<sub>2sub> measurements with TOSCA required at least 10 min to be stable and reliable, this parameter was not useful during the early resuscitation immediately after birth. Moreover, PtcCO<sub>2sub> levels were less precise if compared to the conventional transcutaneous monitoring. However, PtcCO<sub>2sub> measurement by TOSCA was useful as trend-monitoring after stabilization and during transport to NICU.

Coal reburning for cost-effective NO{sub x} compliance

Energy Technology Data Exchange (ETDEWEB)

Folsom, B.A.; Sommer, T.M.; Engelhardt, D.A.; Moyeda, D.K.; Rock, R.G.; O`Dea, D.T.; Hunsicker, S.; Watts, J.U.

1997-12-31

This paper presents the application of micronized coal reburning to a cyclone-fired boiler in order to meet RACT emissions requirements in New York State. Discussed in the paper are reburning technology, the use of a coal micronizer, and the application of the technology to an Eastman Kodak unit. The program is designed to demonstrate the economical reduction of NO{sub x} emissions without adverse impact to the boiler.

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

Analysing organic transistors based on interface approximation

International Nuclear Information System (INIS)

Akiyama, Yuto; Mori, Takehiko

2014-01-01

Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

Energy Technology Data Exchange (ETDEWEB)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J. [Naval Research Laboratory, Electronics Science and Technology Division, Washington, DC 20375 (United States)

2016-08-08

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.

Impact of Process Technologies on ELDRS of Bipolar Transistors

International Nuclear Information System (INIS)

Lu Wu; Ren Diyuan; Guo Qi; Yu Xuefeng; Zheng Yuzhan

2010-01-01

Radiation effects under different dose rates and annealing behaviors of domestic bipolar transistors, with same manufacture technology, were investigated.These transistors include NPN transistors of various emitter area, and LPNP transistors with different doping concentrations in emitter. It is shown that different types of transistors have different radiation responses. The results of NPN transistors show that more degradation occurs at less emitter area. Yet, the results of LPNP transistors demonstrate that transistors with lightly doped emitter are more sensitive to radiation, compared with heavily doped emitter. Finally,the mechanisms of the difference between various radiation responses were analyzed. (authors)

Distributed amplifier using Josephson vortex flow transistors

International Nuclear Information System (INIS)

McGinnis, D.P.; Beyer, J.B.; Nordman, J.E.

1986-01-01

A wide-band traveling wave amplifier using vortex flow transistors is proposed. A vortex flow transistor is a long Josephson junction used as a current controlled voltage source. The dual nature of this device to the field effect transistor is exploited. A circuit model of this device is proposed and a distributed amplifier utilizing 50 vortex flow transistors is predicted to have useful gain to 100 GHz

Photosensitive graphene transistors.

Science.gov (United States)

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hardware Variability-Aware Embedded Software Adaptation

OpenAIRE

Wanner, Lucas Francisco

2014-01-01

With scaling of semiconductor fabrication technologies and the push towards deep sub-micron technologies, individual transistors are now composed by a small number of atoms. This makes it difficult to achieve precise control of manufacturing quality, with the added consequence that even slight differences in manufacturing can result in significant fluctuation in critical device and circuit parameters (such as power, performance, and error characteristics) of parts across the die, die-to-die a...

Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

International Nuclear Information System (INIS)

Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

2009-01-01

This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

Soft-type trap-induced degradation of MoS2 field effect transistors

Science.gov (United States)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Science.gov (United States)

Patterson, Richard L.; Scheick, Leif Z.; Lauenstein, Jean M.; Casey, Megan C.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

Low operating voltage n-channel organic field effect transistors using lithium fluoride/PMMA bilayer gate dielectric

Energy Technology Data Exchange (ETDEWEB)

Kumar, S.; Dhar, A., E-mail: adhar@phy.iitkgp.ernet.in

2015-10-15

Highlights: • Alternative to chemically crosslinking of PMMA to achieve low leakage in provided. • Effect of LiF in reducing gate leakage through the OFET device is studied. • Effect of gate leakage on transistor performance has been investigated. • Low voltage operable and low temperature processed n-channel OFETs were fabricated. - Abstract: We report low temperature processed, low voltage operable n-channel organic field effect transistors (OFETs) using N,N′-Dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C{sub 8}) organic semiconductor and poly(methylmethacrylate) (PMMA)/lithium fluoride (LiF) bilayer gate dielectric. We have studied the role of LiF buffer dielectric in effectively reducing the gate leakage through the device and thus obtaining superior performance in contrast to the single layer PMMA dielectric devices. The bilayer OFET devices had a low threshold voltage (V{sub t}) of the order of 5.3 V. The typical values of saturation electron mobility (μ{sub s}), on/off ratio and inverse sub-threshold slope (S) for the range of devices made were estimated to be 2.8 × 10{sup −3} cm{sup 2}/V s, 385, and 3.8 V/decade respectively. Our work thus provides a potential substitution for much complicated process of chemically crosslinking PMMA to achieve low leakage, high capacitance, and thus low operating voltage OFETs.

Gold nanoparticle-pentacene memory-transistors

OpenAIRE

Novembre , Christophe; Guerin , David; Lmimouni , Kamal; Gamrat , Christian; Vuillaume , Dominique

2008-01-01

We demonstrate an organic memory-transistor device based on a pentacene-gold nanoparticles active layer. Gold (Au) nanoparticles are immobilized on the gate dielectric (silicon dioxide) of a pentacene transistor by an amino-terminated self-assembled monolayer. Under the application of writing and erasing pulses on the gate, large threshold voltage shift (22 V) and on/off drain current ratio of ~3E4 are obtained. The hole field-effect mobility of the transistor is similar in the on and off sta...

The impact of silicon nano-wire technology on the design of single-work-function CMOS transistors and circuits

International Nuclear Information System (INIS)

Bindal, Ahmet; Hamedi-Hagh, Sotoudeh

2006-01-01

This three-dimensional exploratory study on vertical silicon wire MOS transistors with metal gates and undoped bodies demonstrates that these transistors dissipate less power and occupy less layout area while producing comparable transient response with respect to the state-of-the-art bulk and SOI technologies. The study selects a single metal gate work function for both NMOS and PMOS transistors to alleviate fabrication difficulties and then determines a common device geometry to produce an OFF current smaller than 1 pA for each transistor. Once an optimum wire radius and effective channel length is determined, DC characteristics including threshold voltage roll-off, drain-induced barrier lowering and sub-threshold slope of each transistor are measured. Simple CMOS gates such as an inverter, two- and three-input NAND, NOR and XOR gates and a full adder, composed of the optimum NMOS and PMOS transistors, are built to measure transient performance, power dissipation and layout area. Simulation results indicate that worst-case transient time and worst-case delay are 1.63 and 1.46 ps, respectively, for a two-input NAND gate and 7.51 and 7.43 ps, respectively, for a full adder for a fan-out of six transistor gates (24 aF). Worst-case power dissipation is 62.1 nW for a two-input NAND gate and 118.1 nW for a full adder at 1 GHz for the same output capacitance. The layout areas are 0.0066 μm 2 for the two-input NAND gate and 0.049 μm 2 for the full adder circuits

Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

Energy Technology Data Exchange (ETDEWEB)

Makrygianni, M. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Ainsebaa, A. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Nagel, M. [EMPA Swiss Federal Lab. for Materials Science and Technology, Laboratory for Functional Polymers, Überlandstrasse 129, 8600 Dubendorf (Switzerland); Sanaur, S. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Raptis, Y.S. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Zergioti, I., E-mail: zergioti@central.ntua.gr [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Tsamakis, D. [National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece)

2016-12-30

Highlights: • Smooth printing of semiconducting π-conjugated polymer patterns for BG-BC OTFTs. • Well-ordering of PQT-12 when diluted in a high-boiling-point solvent yielding good interface properties. • No significant change in polymer chain orientation observed between LIFT printed patterns. • Reliable solid phase printing technique for thin, organic large area electronics applications, in a well-defined manner. - Abstract: In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO{sub 2}/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm{sup 2} as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10{sup −2} cm{sup 2}/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

DMD reliability: a MEMS success story

Science.gov (United States)

Douglass, Michael

2003-01-01

The Digital Micromirror Device (DMD) developed by Texas Instruments (TI) has made tremendous progress in both performance and reliability since it was first invented in 1987. From the first working concept of a bistable mirror, the DMD is now providing high-brightness, high-contrast, and high-reliability in over 1,500,000 projectors using Digital Light Processing technology. In early 2000, TI introduced the first DMD chip with a smaller mirror (14-micron pitch versus 17-micron pitch). This allowed a greater number of high-resolution DMD chips per wafer, thus providing an increased output capacity as well as the flexibility to use existing package designs. By using existing package designs, subsequent DMDs cost less as well as met our customers' demand for faster time to market. In recent years, the DMD achieved the status of being a commercially successful MEMS device. It reached this status by the efforts of hundreds of individuals working toward a common goal over many years. Neither textbooks nor design guidelines existed at the time. There was little infrastructure in place to support such a large endeavor. The knowledge we gained through our characterization and testing was all we had available to us through the first few years of development. Reliability was only a goal in 1992 when production development activity started; a goal that many throughout the industry and even within Texas Instruments doubted the DMD could achieve. The results presented in this paper demonstrate that we succeeded by exceeding the reliability goals.

The Complete Semiconductor Transistor and Its Incomplete Forms

International Nuclear Information System (INIS)

Jie Binbin; Sah, C.-T.

2009-01-01

This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

DEFF Research Database (Denmark)

Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

2016-01-01

The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...

Dissolution enhancement of Tibolone by micronization technique

Directory of Open Access Journals (Sweden)

Kailash Bansal

2012-01-01

Conclusion: Micronization technique has a significant impact on the dissolution of Tibolone. The experimental findings suggest that micronization can be used for the preparation of rapidly dissolving formulations of Tibolone, and could potentially lead to improvement in the in-vivo bioavailability of Tibolone oral tablets.

Tuning the hysteresis voltage in 2D multilayer MoS{sub 2} FETs

Energy Technology Data Exchange (ETDEWEB)

Jiang, Jie, E-mail: jiangjie@csu.edu.cn; Zheng, Zhouming; Guo, Junjie

2016-10-01

The hysteresis tuning is of great significance before the two-dimensional (2D) molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) can be practically used in the next-generation nanoelectronic devices. In this paper, a simple and effective annealing method was developed to tune the hysteresis voltage in 2D MoS{sub 2} transistors. It was found that high temperature (175 °C) annealing in air could increase the hysteresis voltage from 8.0 V (original device) to 28.4 V, while a next vacuum annealing would reduce the hysteresis voltage to be only 2.0 V. An energyband diagram model based on electron trapping/detrapping due to oxygen adsorption is proposed to understand the hysteresis mechanism in multilayer MoS{sub 2} FET. This simple method for tuning the hysteresis voltage of MoS{sub 2} FET can make a significant step toward 2D nanoelectronic device applications.

Scaling limits and reliability of SOI CMOS technology

International Nuclear Information System (INIS)

Ioannou, D E

2005-01-01

As bulk and PD-SOI CMOS approach their scaling limit (at gate length of around 50 nm), there is a renewed interest on FD-SOI because of its potential for continued scalability beyond this limit. In this review the performance and reliability of extremely scaled FD transistors are discussed and an attempt is made to identify critical areas for further research. (invited paper)

One Micron Laser Technology Advancements at GSFC

Science.gov (United States)

Heaps, William S.

2010-01-01

This slide presentation reviews the advancements made in one micron laser technology at Goddard Space Flight Center. It includes information about risk factors that are being addressed by GSFC, and overviews of the various programs that GSFC is currently managing that are using 1 micron laser technology.

Theoretical study of phosphorene tunneling field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Chang, Jiwon; Hobbs, Chris [SEMATECH, 257 Fuller Rd #2200, Albany, New York 12203 (United States)

2015-02-23

In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with a direct band gap suitable for TFETs applications. Our simulation shows that phosphorene TFETs exhibit subthreshold slope below 60 mV/dec and a wide range of on-current depending on the transport direction due to highly anisotropic band structures of phosphorene. By benchmarking with monolayer MoTe{sub 2} TFETs, we predict that phosphorene TFETs oriented in the small effective mass direction can yield much larger on-current at the same on-current/off-current ratio than monolayer MoTe{sub 2} TFETs. It is also observed that a gate underlap structure is required for scaling down phosphorene TFETs in the small effective mass direction to suppress the source-to-drain direct tunneling leakage current.

Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique

Energy Technology Data Exchange (ETDEWEB)

Borade, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Joshi, K.U. [Anton-Paar India Pvt. Ltd., Thane (W), 400607 (India); Gokarna, A.; Lerondel, G. [Laboratoire de Nanotechnologie et D' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 Rue Marie Curie, BP 2060, 10010 Troyes (France); Walke, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Late, D. [National Chemical Laboratory (NCL), Pune 400027 (India); Jejurikar, S.M., E-mail: jejusuhas@gmail.com [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India)

2016-02-01

We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. - Highlights: • Controlled growth of Dumbbell shaped ZnO using Chemical Bath Deposition (CBD). • Growth mechanism of dumbbell shaped ZnO by self-assembling was discussed. • Quick Transformation of ZnO dumbbell structures in to tubular structures by dissolution. • Sharp UV Emission at 370 nm from both dumbbell and tubular structures.

New Technique for Fabrication of Scanning Single-Electron Transistor Microscopy Tips

Science.gov (United States)

Goodwin, Eric; Tessmer, Stuart

Fabrication of glass tips for Scanning Single-Electron Transistor Microscopy (SSETM) can be expensive, time consuming, and inconsistent. Various techniques have been tried, with varying levels of success in regards to cost and reproducibility. The main requirement for SSETM tips is to have a sharp tip ending in a micron-scale flat face to allow for deposition of a quantum dot. Drawing inspiration from methods used to create tips from optical fibers for Near-Field Scanning Optical Microscopes, our group has come up with a quick and cost effective process for creating SSETM tips. By utilizing hydrofluoric acid to etch the tips and oleic acid to guide the etch profile, optical fiber tips with appropriate shaping can be rapidly prepared. Once etched, electric leads are thermally evaporated onto each side of the tip, while an aluminum quantum dot is evaporated onto the face. Preliminary results using various metals, oxide layers, and lead thicknesses have proven promising.

Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

Energy Technology Data Exchange (ETDEWEB)

Farenc, D.

1997-12-16

Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Science.gov (United States)

Patterson, Richard; Hammoud, Ahmad

2009-01-01

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures

Imaging of vaporised sub-micron phase change contrast agents with high frame rate ultrasound and optics

Science.gov (United States)

Lin, Shengtao; Zhang, Ge; Jamburidze, Akaki; Chee, Melisse; Hau Leow, Chee; Garbin, Valeria; Tang, Meng-Xing

2018-03-01

Phase-change ultrasound contrast agent (PCCA), or nanodroplet, shows promise as an alternative to the conventional microbubble agent over a wide range of diagnostic applications. Meanwhile, high-frame-rate (HFR) ultrasound imaging with microbubbles enables unprecedented temporal resolution compared to traditional contrast-enhanced ultrasound imaging. The combination of HFR ultrasound imaging and PCCAs can offer the opportunity to observe and better understand PCCA behaviour after vaporisation captures the fast phenomenon at a high temporal resolution. In this study, we utilised HFR ultrasound at frame rates in the kilohertz range (5-20 kHz) to image native and size-selected PCCA populations immediately after vaporisation in vitro within clinical acoustic parameters. The size-selected PCCAs through filtration are shown to preserve a sub-micron-sized (mean diameter  1 µm) that originate from native PCCA emulsion. The results demonstrate imaging signals with different amplitudes and temporal features compared to that of microbubbles. Compared with the microbubbles, both the B-mode and pulse-inversion (PI) signals from the vaporised PCCA populations were reduced significantly in the first tens of milliseconds, while only the B-mode signals from the PCCAs were recovered during the next 400 ms, suggesting significant changes to the size distribution of the PCCAs after vaporisation. It is also shown that such recovery in signal over time is not evident when using size-selective PCCAs. Furthermore, it was found that signals from the vaporised PCCA populations are affected by the amplitude and frame rate of the HFR ultrasound imaging. Using high-speed optical camera observation (30 kHz), we observed a change in particle size in the vaporised PCCA populations exposed to the HFR ultrasound imaging pulses. These findings can further the understanding of PCCA behaviour under HFR ultrasound imaging.

The Cheshire-cat-like Behavior of 2nu(sub 3) Overtone of Co2 near 2.134 micron: NIR Lab Spectra of Solid CO2 in H2O and CH3OH

Science.gov (United States)

Bernstein, Max; Sandford, Scott; Cruikshank, Dale

2005-01-01

Infrared (IR) spectra have demonstrated that solid H2O is very common in the outer Solar System, and solid carbon dioxide (CO2) has been detected on icy satellites, comets, and planetismals throughout the outer Solar System. In such environments, CO2 and H2O must sometimes be mixed at a molecular level, changing their IR absorption features. In fact, the IR spectra of CO2-H2O mixtures are not equivalent to a linear combination of the spectra of the pure materials. Laboratory IR spectra of pure CO2 and H2O have been published but a lack of near-IR spectra of CO2-H2O mixtures has made the interpretation of outer Solar System spectra more difficult. We present near infrared (IR) spectra of CO2 in H2O and in CH3OH compared to that of pure solid CO2 and find significant differences. Peaks not present in either pure H2O or pure CO2 spectra become evident. First, the CO2 (2nu(sub 3)) overtone near 2.134 micron (4685/ cm) that is not seen in pure solid CO2 is prominent in the spectrum of a CO2/H2O = 25 mixture. Second, a 2.74 micron (3650/ cm) dangling OH feature of water (and a potentially related peak at 1.89 micron) appear in the spectra of CO2-H2O ice mixtures, but may not be specific to the presence of CO2. Other CO2 peaks display shifts in position and increased width because of intermolecular interactions with water. Changes in CO2 peak positions and profiles on warming of a CO2/H2O = 5 mixture are consistent with 'segregation' of the ice into nearly pure separate components. Absolute strengths for absorptions of CO2 in solid H2O are estimated. Similar results are observed for CO2 in solid CH3OH. Since the CO2 ( 2nu(sub 3)) overtone near 2.134 micron (4685/ cm) is not present in pure CO2 but prominent in mixtures it may be a good observational indicator of whether solid CO2 is a pure material or intimately mixed with other molecules. Significant changes in the near IR spectrum of solid CO2 in the presence of H2O and CH3OH means that the abundance of solid CO2 in the

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

Science.gov (United States)

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-10-20

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

Ultra-high gain diffusion-driven organic transistor

Science.gov (United States)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-01-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

High-Performance Vertical Organic Electrochemical Transistors.

Science.gov (United States)

Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

2018-02-01

Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Millimeter-wave small-signal modeling with optimizing sensitive-parameters for metamorphic high electron mobility transistors

International Nuclear Information System (INIS)

Moon, S-W; Baek, Y-H; Han, M; Rhee, J-K; Kim, S-D; Oh, J-H

2010-01-01

In this paper, we present a simple and reliable technique for determining the small-signal equivalent circuit model parameters of the 0.1 µm metamorphic high electron mobility transistors (MHEMTs) in a millimeter-wave frequency range. The initial eight extrinsic parameters of the MHEMT are extracted using two S-parameter (scattering parameter) sets measured under the pinched-off and zero-biased cold field-effect transistor conditions by avoiding the forward gate biasing. Furthermore, highly calibration-sensitive values of the R s , L s and C pd are optimized by using a gradient optimization method to improve the modeling accuracy. The accuracy enhancement of this procedure is successfully verified with an excellent correlation between the measured and calculated S-parameters up to 65 GHz

Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor.

Science.gov (United States)

Pérez-Tomás, A; Catalàn, G; Fontserè, A; Iglesias, V; Chen, H; Gammon, P M; Jennings, M R; Thomas, M; Fisher, C A; Sharma, Y K; Placidi, M; Chmielowska, M; Chenot, S; Porti, M; Nafría, M; Cordier, Y

2015-03-20

The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly conductive HEMT transistor (Ids > 1 A mm(-1)) to be defined (0.5 A mm(-1) at 300 °C). The vertical breakdown voltage has been determined to be ∼850 V with the vertical drain-bulk (or gate-bulk) current following the hopping mechanism, with an activation energy of 350 meV. The conductive atomic force microscopy nanoscale current pattern does not unequivocally follow the molecular beam epitaxy AlGaN/GaN morphology but it suggests that the FS-GaN substrate presents a series of preferential conductive spots (conductive patches). Both the estimated patches density and the apparent random distribution appear to correlate with the edge-pit dislocations observed via cathodoluminescence. The sub-surface edge-pit dislocations originating in the FS-GaN substrate result in barrier height inhomogeneity within the HEMT Schottky gate producing a subthreshold current.

Improving Power Converter Reliability

DEFF Research Database (Denmark)

Ghimire, Pramod; de Vega, Angel Ruiz; Beczkowski, Szymon

2014-01-01

of a high-power IGBT module during converter operation, which may play a vital role in improving the reliability of the power converters. The measured voltage is used to estimate the module average junction temperature of the high and low-voltage side of a half-bridge IGBT separately in every fundamental......The real-time junction temperature monitoring of a high-power insulated-gate bipolar transistor (IGBT) module is important to increase the overall reliability of power converters for industrial applications. This article proposes a new method to measure the on-state collector?emitter voltage...... is measured in a wind power converter at a low fundamental frequency. To illustrate more, the test method as well as the performance of the measurement circuit are also presented. This measurement is also useful to indicate failure mechanisms such as bond wire lift-off and solder layer degradation...

High transconductance organic electrochemical transistors

Science.gov (United States)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-07-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

High transconductance organic electrochemical transistors

Science.gov (United States)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-01-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

Recent progress in photoactive organic field-effect transistors.

Science.gov (United States)

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Recent progress in photoactive organic field-effect transistors

International Nuclear Information System (INIS)

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-01-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts. (review)

Impact of contact and access resistances in graphene field-effect transistors on quartz substrates for radio frequency applications

Energy Technology Data Exchange (ETDEWEB)

Ramón, Michael E., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Movva, Hema C. P., E-mail: michael.ramon@utexas.edu, E-mail: hemacp@utexas.edu; Fahad Chowdhury, Sk.; Parrish, Kristen N.; Rai, Amritesh; Akinwande, Deji; Banerjee, Sanjay K. [Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758 (United States); Magnuson, Carl W.; Ruoff, Rodney S. [Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712 (United States)

2014-02-17

High-frequency performance of graphene field-effect transistors (GFETs) has been limited largely by parasitic resistances, including contact resistance (R{sub C}) and access resistance (R{sub A}). Measurement of short-channel (500 nm) GFETs with short (200 nm) spin-on-doped source/drain access regions reveals negligible change in transit frequency (f{sub T}) after doping, as compared to ∼23% f{sub T} improvement for similarly sized undoped GFETs measured at low temperature, underscoring the impact of R{sub C} on high-frequency performance. DC measurements of undoped/doped short and long-channel GFETs highlight the increasing impact of R{sub A} for larger GFETs. Additionally, parasitic capacitances were minimized by device fabrication using graphene transferred onto low-capacitance quartz substrates.

Statistical data and results obtained on irradiated transistors 2N.2221 Sesco and 2N.2907 SGS; Donnees de fiabilite et resultats statistiques obtenus sur des transistors 2n.2221 Sesco et 2n.2907 SGS irradies

Energy Technology Data Exchange (ETDEWEB)

Blin, A; Le Ber, J

1966-07-01

This document provides results obtained on many samples of transistors irradiated in the laboratories of the Institut of Nuclear Physic of Lyon. The physical aspects of the irradiation,the statistical aspects of the study and the reliability under irradiation have been studied, but the accent is done on the statistical analysis. (A.L.B.)

Programmable automated transistor test system

International Nuclear Information System (INIS)

Truong, L.V.; Sundberg, G.R.

1986-01-01

The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.

Science.gov (United States)

Abliz, Ablat; Gao, Qingguo; Wan, Da; Liu, Xingqiang; Xu, Lei; Liu, Chuansheng; Jiang, Changzhong; Li, Xuefei; Chen, Huipeng; Guo, Tailiang; Li, Jinchai; Liao, Lei

2017-03-29

Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm 2 /(V s) and small shifts of threshold voltage (V th ). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of α-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the V th and carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable Zn-N and N-H bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the α-IGZO/SiO 2 interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of α-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays.

Phase separation, crystallization and polyamorphism in the Y{sub 2}O{sub 3}-Al{sub 2}O{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Skinner, Lawrie B; Barnes, Adrian C [H H Wills Physics Laboratory, Royal Fort, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Salmon, Philip S [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); Crichton, Wilson A [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, BP 220, Grenoble Cedex, F-38043 (France)], E-mail: a.c.barnes@bristol.ac.uk

2008-05-21

A detailed study of glass formation from aerodynamically levitated liquids in the (Y{sub 2}O{sub 3}){sub x}(Al{sub 2}O{sub 3}){sub 1-x} system for the composition range 0.21{<=}x{<=}0.41 was undertaken by using pyrometric, optical imaging and x-ray diffraction methods. Homogeneous and clear single-phase glasses were produced over the composition range 0.27{<=}x{<=}0.33. For Y{sub 2}O{sub 3}-rich compositions (0.33{<=}x{<=}0.375), cloudy materials were produced which contain inclusions of crystalline yttrium aluminium garnet (YAG) of diameter up to 40 {mu}m in a glassy matrix. For Y{sub 2}O{sub 3}-poor compositions around x = 0.24, cloudy materials were also produced, but it was not possible to deduce whether this resulted from (i) sub-micron inclusions of a nano-crystalline or glassy material in a glassy matrix or (ii) a glass formed by spinodal decomposition. For x = 0.21, however, the sample cloudiness results from crystallization into at least two phases comprising yttrium aluminium perovskite and alumina. The associated pyrometric cooling curve shows slow recalescence events with a continuous and slow evolution of excess heat which contrasts with the sharp recalescence events observed for the crystallization of YAG at compositions near x = 0.375. The materials that are the most likely candidates for demonstrating homogeneous nucleation of a second liquid phase occur around x = 0.25, which corresponds to the limit for formation of a continuous random network of corner-shared AlO{sub 4} tetrahedra.

Electrical dependence on the chemical composition of the gate dielectric in indium gallium zinc oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Tari, Alireza, E-mail: atari@uwaterloo.ca; Lee, Czang-Ho; Wong, William S. [Department of Electrical and Computer Engineering, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

2015-07-13

Bottom-gate thin-film transistors were fabricated by depositing a 50 nm InGaZnO (IGZO) channel layer at 150 °C on three separate gate dielectric films: (1) thermal SiO{sub 2}, (2) plasma-enhanced chemical-vapor deposition (PECVD) SiN{sub x}, and (3) a PECVD SiO{sub x}/SiN{sub x} dual-dielectric. X-ray photoelectron and photoluminescence spectroscopy showed the V{sub o} concentration was dependent on the hydrogen concentration of the underlying dielectric film. IGZO films on SiN{sub x} (high V{sub o}) and SiO{sub 2} (low V{sub o}) had the highest and lowest conductivity, respectively. A PECVD SiO{sub x}/SiN{sub x} dual-dielectric layer was effective in suppressing hydrogen diffusion from the nitride layer into the IGZO and resulted in higher resistivity films.

Universal power transistor base drive control unit

Science.gov (United States)

Gale, Allan R.; Gritter, David J.

1988-01-01

A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Energy Technology Data Exchange (ETDEWEB)

Cho, Byungsu [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Samsung Display Co. Ltd., Tangjeong, Chungcheongnam-Do 336-741 (Korea, Republic of); Choi, Yonghyuk; Shin, Seokyoon [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Jeon, Heeyoung [Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Seo, Hyungtak, E-mail: hseo@ajou.ac.kr [Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of); Jeon, Hyeongtag, E-mail: hjeon@hanyang.ac.kr [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2014-01-27

We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

Efavirenz Dissolution Enhancement I: Co-Micronization

Directory of Open Access Journals (Sweden)

Helvécio Vinícius Antunes Rocha

2012-12-01

Full Text Available AIDS constitutes one of the most serious infectious diseases, representing a major public health priority. Efavirenz (EFV, one of the most widely used drugs for this pathology, belongs to the Class II of the Biopharmaceutics Classification System for drugs with very poor water solubility. To improve EFV’s dissolution profile, changes can be made to the physical properties of the drug that do not lead to any accompanying molecular modifications. Therefore, the study objective was to develop and characterize systems with efavirenz able to improve its dissolution, which were co-processed with sodium lauryl sulfate (SLS and polyvinylpyrrolidone (PVP. The technique used was co-micronization. Three different drug:excipient ratios were tested for each of the two carriers. The drug dispersion dissolution results showed significant improvement for all the co-processed samples in comparison to non-processed material and corresponding physical mixtures. The dissolution profiles obtained for dispersion with co-micronized SLS samples proved superior to those of co-micronized PVP, with the proportion (1:0.25 proving the optimal mixture. The improvements may be explained by the hypothesis that formation of a hydrophilic layer on the surface of the micronized drug increases the wettability of the system formed, corroborated by characterization results indicating no loss of crystallinity and an absence of interaction at the molecular level.

Hydrogen-terminated diamond vertical-type metal oxide semiconductor field-effect transistors with a trench gate

Energy Technology Data Exchange (ETDEWEB)

Inaba, Masafumi, E-mail: inaba-ma@ruri.waseda.jp; Muta, Tsubasa; Kobayashi, Mikinori; Saito, Toshiki; Shibata, Masanobu; Matsumura, Daisuke; Kudo, Takuya; Hiraiwa, Atsushi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kawarada, Hiroshi [Graduate School of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051 (Japan)

2016-07-18

The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al{sub 2}O{sub 3}. Using Al{sub 2}O{sub 3} as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off.

Mechanisms of thermally induced threshold voltage instability in GaN-based heterojunction transistors

Energy Technology Data Exchange (ETDEWEB)

Yang, Shu; Liu, Shenghou; Liu, Cheng; Lu, Yunyou; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

2014-12-01

In this work, we attempt to reveal the underlying mechanisms of divergent V{sub TH}-thermal-stabilities in III-nitride metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) and MOS-Channel-HEMT (MOSC-HEMT). In marked contrast to MOSC-HEMT featuring temperature-independent V{sub TH}, MIS-HEMT with the same high-quality gate-dielectric/III-nitride interface and similar interface trap distribution exhibits manifest thermally induced V{sub TH} shift. The temperature-dependent V{sub TH} of MIS-HEMT is attributed to the polarized III-nitride barrier layer, which spatially separates the critical gate-dielectric/III-nitride interface from the channel and allows “deeper” interface trap levels emerging above the Fermi level at pinch-off. This model is further experimentally validated by distinct V{sub G}-driven Fermi level movements at the critical interfaces in MIS-HEMT and MOSC-HEMT. The mechanisms of polarized III-nitride barrier layer in influencing V{sub TH}-thermal-stability provide guidelines for the optimization of insulated-gate III-nitride power switching devices.

Low-background transistors for application in nuclear electronics

International Nuclear Information System (INIS)

Krasnokutskij, R.N.; Kurchaninov, L.L.; Fedyakin, N.N.; Shuvalov, R.S.

1988-01-01

Investigations of silicon transistors were carried out to determine transistors with low value of base distributed resistance (R). Measurement results for R and current amplification coefficient β are presented for bipolar transistor several types. Correlations between R and β were studied. KT 399A, 2T640A and KT3117B transistors are found to be most adequate ones as a base for low-background amplifier development

High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

Energy Technology Data Exchange (ETDEWEB)

Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

2014-04-07

In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer

Science.gov (United States)

Chavarkar, Prashant; Smorchkova, Ioulia P.; Keller, Stacia; Mishra, Umesh; Walukiewicz, Wladyslaw; Wu, Yifeng

2005-02-01

A Group III nitride based high electron mobility transistors (HEMT) is disclosed that provides improved high frequency performance. One embodiment of the HEMT comprises a GaN buffer layer, with an Al.sub.y Ga.sub.1-y N (y=1 or y 1) layer on the GaN buffer layer. An Al.sub.x Ga.sub.1-x N (0.ltoreq.x.ltoreq.0.5) barrier layer on to the Al.sub.y Ga.sub.1-y N layer, opposite the GaN buffer layer, Al.sub.y Ga.sub.1-y N layer having a higher Al concentration than that of the Al.sub.x Ga.sub.1-x N barrier layer. A preferred Al.sub.y Ga.sub.1-y N layer has y=1 or y.about.1 and a preferred Al.sub.x Ga.sub.1-x N barrier layer has 0.ltoreq.x.ltoreq.0.5. A 2DEG forms at the interface between the GaN buffer layer and the Al.sub.y Ga.sub.1-y N layer. Respective source, drain and gate contacts are formed on the Al.sub.x Ga.sub.1-x N barrier layer. The HEMT can also comprising a substrate adjacent to the buffer layer, opposite the Al.sub.y Ga.sub.1-y N layer and a nucleation layer between the Al.sub.x Ga.sub.1-x N buffer layer and the substrate.

Airborne spectrophotometry of P/Halley from 16 to 30 microns

Science.gov (United States)

Herter, T.; Gull, G. E.; Campins, H.

1986-01-01

Comet Halley was observed in the 16 to 30 micron region using the Cornell University 7-channel spectrometer (resolution = 0.02) on board the Kuiper Airborne Observatory on 1985 Dec. 14.2. A 30-arcsec aperture (FWHM) was used. Measurements centered on the nuclear condensation micron indicate that if present, the 20 micron silicate feature is very weak, and that a relatively narrow strong feature centered at 28.4 microns possibly exists. However, this feature may be an artifact of incomplete correction for telluric water vapor absorption.

Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

Science.gov (United States)

Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

2017-12-13

A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

Realization of solid-state nanothermometer using Ge quantum-dot single-hole transistor in few-hole regime

Energy Technology Data Exchange (ETDEWEB)

Chen, I. H.; Lai, W. T.; Li, P. W., E-mail: pwli@ee.ncu.edu.tw [Department of Electrical Engineering and Center for Nano Science and Technology, National Central University, ChungLi 32001, Taiwan (China)

2014-06-16

Semiconductor Ge quantum-dot (QD) thermometry has been demonstrated based on extraordinary temperature-dependent oscillatory differential conductance (G{sub D}) characteristics of Ge-QD single-hole transistors (SHTs) in the few-hole regime. Full-voltage width-at-half-minimum, V{sub 1/2}, of G{sub D} valleys appears to be fairly linear in the charge number (n) and temperature within the QD in a relationship of eV{sub 1/2} ≅ (1 − 0.11n) × 5.15k{sub B}T, providing the primary thermometric quantity. The depth of G{sub D} valley is also proportional to charging energy (E{sub C}) and 1/T via ΔG{sub D} ≅ E{sub C}/9.18k{sub B}T, providing another thermometric quantity. This experimental demonstration suggests our Ge-QD SHT offering effective building blocks for nanothermometers over a wide temperature range with a detection temperature as high as 155 K in a spatial resolution less than 10 nm and temperature accuracy of sub-kelvin.

Micronization increases vitamin E carrying and releasing abilities of insoluble fiber.

Science.gov (United States)

Hsu, Pang-Kuei; Chien, Po-Jung; Chau, Chi-Fai

2008-03-26

This study was to investigate the effects of micronization on vitamin-carrying capacity and slow-release ability of carambola (starfruit) insoluble fiber (IF) and cellulose using in vitro and in vivomodels. Upon micronization, carambola IF (8.1 microm) underwent structural changes to expose more functional groups in the fiber matrix and to exhibit higher oil-holding capacity ( approximately 20.4-fold). Micronized fibers in forms of fiber-vitamin composites, particularly the micronized carambola IF-vitamin composite, were capable of carrying vitamin E (alpha-tocopherol) up to 9.6-fold over their unmicronized forms and releasing nutrient gradually. Animal studies demonstrated that the adminstration of micronized carambola IF-vitamin composite could maintain the plasma vitamin E of rats at relatively higher levels (2.1-3.6-fold of the initial values) for at least 5 h. The results suggested that micronized fibers, particularly the micronized carambola IF, could be exploited as potential nutrient carriers in food applications and also be used to produce slow-release formulations.

Experimental study on combustion of biomass micron fuel (BMF) in cyclone furnace

International Nuclear Information System (INIS)

Luo Siyi; Xiao Bo; Hu Zhiquan; Liu Shiming; He Maoyun

2010-01-01

Based on biomass micron fuel (BMF) with particle size less than 250 μm, a cyclone combustion concept was presented and a lab-scale cyclone furnace was designed to evaluate the feasibility. The influences of equivalence ration (ER) and particle size of BMF on combustion performance were studied, as well as temperature distribution in the combustion chamber. The results show that BMF combustion in the cyclone furnace is reliable, with rational temperature distribution inside furnace hearth, lower CO emission, soot concentration and C content in ashes. As ER being 1.2, the temperature in the chamber is maximized up to 1200 deg. C. Smaller particles results in better combustion performances.

Planar-Processed Polymer Transistors.

Science.gov (United States)

Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

2016-10-01

Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Basic matrix algebra and transistor circuits

CERN Document Server

Zelinger, G

1963-01-01

Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

Correlation of infrared reflectance ratios at 2.3 microns/1.6 micron and 1.1 micron/1.6 micron with delta O-18 values delineating fossil hydrothermal systems in the Idaho batholith

Science.gov (United States)

Gillespie, A. R.; Criss, R. E.

1983-01-01

Reflectance ratios from laboratory spectra and airborne multispectral images are found to be strongly correlated with delta O-18 values of granite rocks in the Idaho batholith. The correlation is largely a result of interactions between hot water and rock, which lowered the delta O-18 values of the rocks and produced secondary hydrous material. Maps of the ratio of reflectivities at 2.3 and 1.6 microns should delineate fossil hydrothermal systems and provide estimates of alteration intensity. However, hydrous minerals produced during deuteric alteration or weathering cannot be unambiguously distinguished in remotely sensed images from the products of propylitic alteration without the use of narrow-band scanners. The reflectivity at 1.6 micron is strongly correlated with rock density and may be useful in distinguishing rock types in granitic terranes.

Graphene-based flexible and stretchable thin film transistors.

Science.gov (United States)

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)

International Nuclear Information System (INIS)

Sah, C.-T.; Jie Binbin

2009-01-01

This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its one-transistor basic building block circuits. Examples are given for the one and two MOS gates on thin and thick, pure and impure base, with electron and hole contacts, and the corresponding theoretical current-voltage characteristics previously computed by us, without generation-recombination-trapping-tunneling of electrons and holes. These examples include the one-MOS-gate on semi-infinite thick impure base transistor (the bulk transistor) and the impurethin-base Silicon-on-Insulator (SOI) transistor and the two-MOS-gates on thin base transistors (the FinFET and the Thin Film Transistor TFT). Figures are given with the cross-section views containing the electron and hole concentration and current density distributions and trajectories and the corresponding DC current-voltage characteristics.

Modelling of nanoscale multi-gate transistors affected by atomistic interface roughness

Science.gov (United States)

Nagy, Daniel; Aldegunde, Manuel; Elmessary, Muhammad A.; García-Loureiro, Antonio J.; Seoane, Natalia; Kalna, Karol

2018-04-01

Interface roughness scattering (IRS) is one of the major scattering mechanisms limiting the performance of non-planar multi-gate transistors, like Fin field-effect transistors (FETs). Here, two physical models (Ando’s and multi-sub-band) of electron scattering with the interface roughness induced potential are investigated using an in-house built 3D finite element ensemble Monte Carlo simulation toolbox including parameter-free 2D Schrödinger equation quantum correction that handles all relevant scattering mechanisms within highly non-equilibrium carrier transport. Moreover, we predict the effect of IRS on performance of FinFETs with realistic channel cross-section shapes with respect to the IRS correlation length (Λ) and RMS height (Δ_RMS ). The simulations of the n-type SOI FinFETs with the multi-sub-band IRS model shows its very strong effect on electron transport in the device channel compared to the Ando’s model. We have also found that the FinFETs are strongly affected by the IRS in the ON-region. The limiting effect of the IRS significantly increases as the Fin width is reduced. The FinFETs with channel orientation are affected more by the IRS than those with the crystal orientation. Finally, Λ and Δ_RMS are shown to affect the device performance similarly. A change in values by 30% (Λ) or 20% (Δ_RMS ) results in an increase (decrease) of up to 13% in the drive current.

Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

Energy Technology Data Exchange (ETDEWEB)

Elliman, R.G.; Jiang, H.; Wong, W.C.; Kringhoj, P. [Australian National Univ., Canberra, ACT (Australia)

1996-12-31

It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

Ion-beam synthesis of Ge{sub x}Si{sub 1-x} strained layers for high speed electronic device applications

Energy Technology Data Exchange (ETDEWEB)

Elliman, R G; Jiang, H; Wong, W C; Kringhoj, P [Australian National Univ., Canberra, ACT (Australia)

1997-12-31

It is shown that Ge{sub x}S{sub 1-x} strained layers can be fabricated by Ge implantation and solid-phase epitaxy and that the use of these layers can improve the performance of electronic devices. Several materials science issues are addressed, including the effect of Ge on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The process is demonstrated for metal-oxide-semiconductor field-effect-transistors (MOSFETs). 6 refs., 5 figs.

Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

Science.gov (United States)

Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

2017-01-11

Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

High Accuracy Transistor Compact Model Calibrations

Energy Technology Data Exchange (ETDEWEB)

Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

2015-09-01

Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

Sub-kT/q subthreshold slope p-metal-oxide-semiconductor field-effect transistors with single-grained Pb(Zr,Ti)O3 featuring a highly reliable negative capacitance

Science.gov (United States)

Park, Jae Hyo; Joo, Seung Ki

2016-03-01

A reliable on/off switching with an sub-kT/q subthreshold slope (38 mV/dec at room temperature) is experimentally demonstrated with using selectively nucleated laterally crystallized single-grain Pb(Zr,Ti)O3 (PZT) ferroelectric and ZrTiO4 paraelectric thin-film. The combination of ferroelectric and paraelectric thin-film is enabled to form a negative capacitance (NC) at the weak inversion region. However, the PZT grain-boundary easily degrades the NC properties after switching the on/off more than 108 times. It is found that the polarization of PZT is diminished from the path of grain-boundary. Here, we effectively suppress the degradation of NC MOS-FET which did not showed any fatigue even after 108 on/off switching. At the request of the authors this article is retracted due to duplication of figures and significant overlap with other publications by the authors and because of concerns about the accuracy of the description of the devices and materials from which the reported results were obtained. The authors recognize that these represent serious errors and sincerely apologize for any inconvenience they may have caused. The article is retracted from the scientific record with effect from 17 February 2017.

Ultrasmall transistor-based light sources

DEFF Research Database (Denmark)

With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

A comparative study on top-gated and bottom-gated multilayer MoS2 transistors with gate stacked dielectric of Al2O3/HfO2.

Science.gov (United States)

Zou, Xiao; Xu, Jingping; Huang, Hao; Zhu, Ziqang; Wang, Hongjiu; Li, Borui; Liao, Lei; Fang, Guojia

2018-06-15

Top-gated and bottom-gated transistors with multilayer MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 (9 nm/6 nm) were fabricated and comparatively studied. Excellent electrical properties are demonstrated for the TG transistors with high on-off current ratio of 10 8 , high field-effect mobility of 10 2 cm 2 V -1 s -1 , and low subthreshold swing of 93 mV dec -1 . Also, enhanced reliability has been achieved for the TG transistors with threshold voltage shift of 10 -3 -10 -2 V MV -1 cm -1 after 6 MV cm -1 gate-biased stressing. All improvement for the TG device can be ascribed to the formed device structure and dielectric environment. Degradation of the performance for the BG transistors should be attributed to reduced gate capacitance density and deteriorated interface properties related to vdW gap with a thickness about 0.4 nm. So, the TG transistor with MoS 2 channel fully encapsulated by stacked Al 2 O 3 /HfO 2 is a promising way to fabricate high-performance ML MoS 2 field-effect transistors for practical electron device applications.

The Aluminum-Free P-n-P InGaAsN Double Heterojunction Bipolar Transistors

Energy Technology Data Exchange (ETDEWEB)

CHANG,PING-CHIH; LI,N.Y.; BACA,ALBERT G.; MONIER,C.; LAROCHE,J.R.; HOU,H.Q.; REN,F.; PEARTON,S.J.

2000-08-01

The authors have demonstrated an aluminum-free P-n-P GaAs/InGaAsN/GaAs double heterojunction bipolar transistor (DHBT). The device has a low turn-on voltage (V{sub ON}) that is 0.27 V lower than in a comparable P-n-p AlGaAs/GaAs HBT. The device shows near-ideal D. C. characteristics with a current gain ({beta}) greater than 45. The high-speed performance of the device are comparable to a similar P-n-p AlGaAs/GaAs HBT, with f{sub T} and f{sub MAX} values of 12 GHz and 10 GHz, respectively. This device is very suitable for low-power complementary HBT circuit applications, while the aluminum-free emitter structure eliminates issues typically associated with AlGaAs.

Light-induced hysteresis and recovery behaviors in photochemically activated solution-processed metal-oxide thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Jo, Jeong-Wan; Park, Sung Kyu, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr [School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756 (Korea, Republic of); Kim, Yong-Hoon, E-mail: yhkim76@skku.edu, E-mail: skpark@cau.ac.kr [School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

2014-07-28

In this report, photo-induced hysteresis, threshold voltage (V{sub T}) shift, and recovery behaviors in photochemically activated solution-processed indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) are investigated. It was observed that a white light illumination caused negative V{sub T} shift along with creation of clockwise hysteresis in electrical characteristics which can be attributed to photo-generated doubly ionized oxygen vacancies at the semiconductor/gate dielectric interface. More importantly, the photochemically activated IGZO TFTs showed much reduced overall V{sub T} shift compared to thermally annealed TFTs. Reduced number of donor-like interface states creation under light illumination and more facile neutralization of ionized oxygen vacancies by electron capture under positive gate potential are claimed to be the origin of the less V{sub T} shift in photochemically activated TFTs.

Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System

Directory of Open Access Journals (Sweden)

Gaspar Casados-Cruz

2010-11-01

Full Text Available Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane.

A reliable ground bounce noise reduction technique for nanoscale CMOS circuits

Science.gov (United States)

Sharma, Vijay Kumar; Pattanaik, Manisha

2015-11-01

Power gating is the most effective method to reduce the standby leakage power by adding header/footer high-VTH sleep transistors between actual and virtual power/ground rails. When a power gating circuit transitions from sleep mode to active mode, a large instantaneous charge current flows through the sleep transistors. Ground bounce noise (GBN) is the high voltage fluctuation on real ground rail during sleep mode to active mode transitions of power gating circuits. GBN disturbs the logic states of internal nodes of circuits. A novel and reliable power gating structure is proposed in this article to reduce the problem of GBN. The proposed structure contains low-VTH transistors in place of high-VTH footer. The proposed power gating structure not only reduces the GBN but also improves other performance metrics. A large mitigation of leakage power in both modes eliminates the need of high-VTH transistors. A comprehensive and comparative evaluation of proposed technique is presented in this article for a chain of 5-CMOS inverters. The simulation results are compared to other well-known GBN reduction circuit techniques at 22 nm predictive technology model (PTM) bulk CMOS model using HSPICE tool. Robustness against process, voltage and temperature (PVT) variations is estimated through Monte-Carlo simulations.

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

2016-06-13

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

Molecular materials for organic field-effect transistors

International Nuclear Information System (INIS)

Mori, T

2008-01-01

Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

Multiple-channel detection of cellular activities by ion-sensitive transistors

Science.gov (United States)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

3 micron spectrophotometry of Comet Halley - Evidence for water ice

Science.gov (United States)

Bregman, Jesse D.; Tielens, A. G. G. M.; Witteborn, Fred C.; Rank, David M.; Wooden, Diane

1988-01-01

Structure has been observed in the 3-3.6 micron preperihelion spectrum of Comet Halley consistent with either an absorption band near 3.1 microns or emission near 3.3 microns. The results suggest that a large fraction of the water molecules lost by the comet are initially ejected in the form of small ice particles rather than in the gas phase.

Thermal Cycling and High Temperature Reverse Bias Testing of Control and Irradiated Gallium Nitride Power Transistors

Science.gov (United States)

Patterson, Richard L.; Boomer, Kristen T.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

2014-01-01

The power systems for use in NASA space missions must work reliably under harsh conditions including radiation, thermal cycling, and exposure to extreme temperatures. Gallium nitride semiconductors show great promise, but information pertaining to their performance is scarce. Gallium nitride N-channel enhancement-mode field effect transistors made by EPC Corporation in a 2nd generation of manufacturing were exposed to radiation followed by long-term thermal cycling and testing under high temperature reverse bias conditions in order to address their reliability for use in space missions. Result of the experimental work are presented and discussed.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

Fluorine incorporation in solution-processed poly-siloxane passivation for highly reliable a-InGaZnO thin-film transistors

Science.gov (United States)

Yoshida, Naofumi; Bermundo, Juan Paolo; Ishikawa, Yasuaki; Nonaka, Toshiaki; Taniguchi, Katsuto; Uraoka, Yukiharu

2018-03-01

We investigated a fluorine-containing polysiloxane (Poly-SX) passivation layer fabricated by solution process for amorphous InGaZnO (a-IGZO) thin-film transistors (TFT). This passivation layer greatly improved the stability of the a-IGZO device even after being subjected to positive bias stress (PBS) and negative bias stress (NBS). The mobility (µ) of TFTs passivated by fluorine-containing Poly-SX increased by 31%-56% (10.50-12.54 cm2 V-1 s-1) compared with TFTs passivated by non-fluorinated Poly-SX (8.04 cm2 V-1 s-1). Increasing the amount of fluorine additives led to a higher µ in passivated TFTs. Aside from enhancing the performance, these passivation layers could increase the reliability of a-IGZO TFTs under PBS and NBS with a minimal threshold voltage shift (ΔV th) of up to  +0.2 V and  -0.1 V, respectively. Additionally, all TFTs passivated by the fluorinated passivation materials did not exhibit a hump effect after NBS. We also showed that fluorinated photosensitive Poly-SX, which can be fabricated without any dry etching process, had an effective passivation property. In this report, we demonstrated the photolithography of Poly-SX, and electrical properties of Poly-SX passivated TFTs, and analyzed the state of the a-IGZO layer to show the large potential of Poly-SX as an effective solution-processed passivation material.

Pengaruh Temperatur, Waktu, dan Aditif Dalam Pembuatan Zircon Micronized

Directory of Open Access Journals (Sweden)

Sajima

2017-05-01

Full Text Available Research on temperature, time and additives effects on milling process in micronized-zircon production has been conducted. The production of zircon micronized started from sorting process on mining products then followed by beneficiation, roasting, leaching, dryng and milling processes. The results showed that the optimum conditions of the roasting process was at the temperature of 425 °C, in 25 minutes and using 4% additives. In these conditions, micronized zircon (2 µm obtained as much as 92.10% in10 minutes milling time.

Smallest Nanoelectronic with Atomic Devices with Precise Structures

Science.gov (United States)

Yamada, Toshishige

2000-01-01

Since its invention in 1948, the transistor has revolutionized our everyday life - transistor radios and TV's appeared in the early 1960s, personal computers came into widespread use in the mid-1980s, and cellular phones, laptops, and palm-sized organizers dominated the 1990s. The electronics revolution is based upon transistor miniaturization; smaller transistors are faster, and denser circuitry has more functionality. Transistors in current generation chips are 0.25 micron or 250 nanometers in size, and the electronics industry has completed development of 0.18 micron transistors which will enter production within the next few years. Industry researchers are now working to reduce transistor size down to 0.13 micron - a thousandth of the width of a human hair. However, studies indicate that the miniaturization of silicon transistors will soon reach its limit. For further progress in microelectronics, scientists have turned to nanotechnology to advance the science. Rather than continuing to miniaturize transistors to a point where they become unreliable, nanotechnology offers the new approach of building devices on the atomic scale [see sidebar]. One vision for the next generation of miniature electronics is atomic chain electronics, where devices are composed of atoms aligned on top of a substrate surface in a regular pattern. The Atomic Chain Electronics Project (ACEP) - part of the Semiconductor Device Modeling and Nanotechnology group, Integrated Product Team at the NAS Facility has been developing the theory of understanding atomic chain devices, and the author's patent for atomic chain electronics is now pending.

Organic Thin-Film Transistor (OTFT-Based Sensors

Directory of Open Access Journals (Sweden)

Daniel Elkington

2014-04-01

Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

Doped organic transistors operating in the inversion and depletion regime

Science.gov (United States)

Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

2013-01-01

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-Sung; Xing Piao, Ming; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin, Gyeonggi-Do 446-712 (Korea, Republic of); Choi, Yong-Hee [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Semiconductor R and D Center, Samsung Electronics, Hwasung, Gyeonggi-do 445-701 (Korea, Republic of)

2014-03-21

Various plasma treatment effects such as oxygen (O{sub 2}), nitrogen (N{sub 2}), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O{sub 2} and N{sub 2} plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Sub-microanalysis of solid samples with near-field enhanced atomic emission spectroscopy

Science.gov (United States)

Wang, Xiaohua; Liang, Zhisen; Meng, Yifan; Wang, Tongtong; Hang, Wei; Huang, Benli

2018-03-01

A novel approach, which we have chosen to name it as near-field enhanced atomic emission spectroscopy (NFE-AES), was proposed by introducing a scanning tunnelling microscope (STM) system into a laser-induced breakdown spectrometry (LIBS). The near-field enhancement of a laser-illuminated tip was utilized to improve the lateral resolution tremendously. Using the hybrid arrangement, pure metal tablets were analyzed to verify the performance of NFE-AES both in atmosphere and in vacuum. Due to localized surface plasmon resonance (LSPR), the incident electromagnetic field is enhanced and confined at the apex of tip, resulting in sub-micron scale ablation and elemental emission signal. We discovered that the signal-to-noise ratio (SNR) and the spectral resolution obtained in vacuum condition are better than those acquired in atmospheric condition. The quantitative capability of NFE-AES was demonstrated by analyzing Al and Pb in Cu matrix, respectively. Submicron-sized ablation craters were achieved by performing NFE-AES on a Si wafer with an Al film, and the spectroscopic information from a crater of 650 nm diameter was successfully obtained. Due to its advantage of high lateral resolution, NFE-AES imaging of micro-patterned Al lines on an integrated circuit of a SIM card was demonstrated with a sub-micron lateral resolution. These results reveal the potential of the NFE-AES technique in sub-microanalysis of solids, opening an opportunity to map chemical composition at sub-micron scale.

Implementation of Self-Bias Transistor on Voting Logic

International Nuclear Information System (INIS)

Harzawardi Hasim; Syirrazie Che Soh

2014-01-01

Study in the eld of digital integrated circuit (IC) already become common to the modern industrial. Day by day we have been introduced with new gadget that was developed based on transistor. This paper will study the implementation of self-bias transistor on voting logic. The self-bias transistor will connected both on pull-up network and pull-down network. On previous research, study on comparison of total number of transistors, time propagation delay, and frequency between NAND and NOR gate of voting logic. It's show, with the same number of transistor, NAND gate achieve high frequency and low time propagation delay compare to NOR gate. We extend this analysis by comparing the total number of transistor, time propagation delay, frequency and power dissipation between common NAND gate with self-bias NAND gate. Extensive LTSpice simulations were performed using IBM 90 nm CMOS(Complementary Metal Oxide Semiconductor) process technology. The result show self-bias voting NAND gate consumes 54 % less power dissipation, 43% slow frequency and 43 % high time propagation delay compare to common voting NAND gate. (author)

Characterization of ionizing radiation effects in MOS structures by study of bipolar operation; Caracterisation des effets induits par irradiations ionisantes dans des structures MOS a partir de leur fonctionnement en regime bipolaire

Energy Technology Data Exchange (ETDEWEB)

Bakhtiar, H. [Univ. Teknologi Malaysia, Dept. of Physics, Johor (Malaysia); Picard, C.; Brisset, C. [CEA Saclay, Lab. d' Electronique et de Technologie de l' Informatique, LETI, 91 - Gif-sur-Yvette (France); Bakhtiar, H.; Hoffmann, A.; Charles, J.P. [Metz Univ., LICM-CLOES-Supelec, 57 (France)

1999-07-01

This work presents an original method to characterize radiation effects of micronic transistors. The characterization includes a study of the transistor substrate-drain junction and current gain variation of the bipolar transistor (drain-substrate-source as emitter-base-collector) for different gate voltages. (author000.

A Novel Leakage-tolerant Domino Logic Circuit With Feedback From Footer Transistor In Ultra Deep Submicron CMOS

DEFF Research Database (Denmark)

Moradi, Farshad; Peiravi, Ali; Mahmoodi, Hamid

As the CMOS manufacturing process scales down into the ultra deep sub-micron regime, the leakage current becomes an increasingly more important consideration in VLSI circuit design. In this paper, a high speed and noise immune domino logic circuit is presented which uses the property of the footer...

A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

Science.gov (United States)

Ghoreishi, Seyed Saleh; Saghafi, Kamyar; Yousefi, Reza; Moravvej-farshi, Mohammad Kazem

2016-09-01

In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.

Using white noise to gate organic transistors for dynamic monitoring of cultured cell layers.

Science.gov (United States)

Rivnay, Jonathan; Leleux, Pierre; Hama, Adel; Ramuz, Marc; Huerta, Miriam; Malliaras, George G; Owens, Roisin M

2015-06-26

Impedance sensing of biological systems allows for monitoring of cell and tissue properties, including cell-substrate attachment, layer confluence, and the "tightness" of an epithelial tissue. These properties are critical for electrical detection of tissue health and viability in applications such as toxicological screening. Organic transistors based on conducting polymers offer a promising route to efficiently transduce ionic currents to attain high quality impedance spectra, but collection of complete impedance spectra can be time consuming (minutes). By applying uniform white noise at the gate of an organic electrochemical transistor (OECT), and measuring the resulting current noise, we are able to dynamically monitor the impedance and thus integrity of cultured epithelial monolayers. We show that noise sourcing can be used to track rapid monolayer disruption due to compounds which interfere with dynamic polymerization events crucial for maintaining cytoskeletal integrity, and to resolve sub-second alterations to the monolayer integrity.

Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

Science.gov (United States)

KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

2018-05-01

Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

The Carnegie Hubble Program: The Leavitt Law at 3.6 microns and 4.5 microns in the Large Magellanic Cloud

Science.gov (United States)

Scowcroft, Victoria; Freedman, Wendy L.; Madore, Barry F.; Monson, Andrew J.; Persson, S. E.; Seibert, Mark; Rigby, Jane R.; Sturch, Laura

2011-01-01

The Carnegie Hubble Program (CHP) is designed to improve the extragalactic distance scale using data from the post-cryogenic era of Spitzer. The ultimate goal is a determination of the Hubble constant to an accuracy of 2%. This paper is the first in a series on the Cepheid population of the Large Magellanic Cloud, and focuses on the period-luminosity relations (Leavitt laws) that will be used, in conjunction with observations of Milky Way Cepheids, to set the slope and zero-point of the Cepheid distance scale in the mid-infrared. To this end, we have obtained uniformly-sampled light curves for 85 LMC Cepheids, having periods between 6 and 140 days. Period- luminosity and period-color relations are presented in the 3.6 micron and 4.5 micron bands. We demonstrate that the 3.6 micron band is a superb distance indicator. The cyclical variation of the [3.6]-[4.5] color has been measured for the first time. We attribute the amplitude and phase of the color curves to the dissociation and recombination of CO molecules in the Cepheid s atmosphere. The CO affects only the 4.5 micron flux making it a potential metallicity indicator.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

Science.gov (United States)

Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

2012-01-01

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

Efficient simulation of power MOS transistors

NARCIS (Netherlands)

Ugryumova, M.; Schilders, W.H.A.

2011-01-01

In this report we present a few industrial problems related to modeling of MOS transistors. We suggest an efficient algorithm for computing output current at the top ports of power MOS transistors for given voltage excitations. The suggested algorithm exploits the connection between the resistor and

Thermal transistor utilizing gas-liquid transition

KAUST Repository

Komatsu, Teruhisa S.

2011-01-25

We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

Water-gel for gating graphene transistors.

Science.gov (United States)

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

The Carnegie Chicago Hubble Program: The Mid-Infrared Colours of Cepheids and the Effect of Metallicity on the CO Band-Head at 4.6 Micron

Science.gov (United States)

Scowcroft, Victoria; Seibert, Mark; Freedman, Wendy L.; Beaton, Rachael L.; Madore, Barry F.; Monson, Andrew J.; Rich, Jeffery A.; Rigby, Jane R.

2016-01-01

We compare mid-infrared (IR) 3.6 and 4.5 micron Warm Spitzer observations for Cepheids in the Milky Way and the Large and Small Magellanic Clouds. Using models, we explore in detail the effect of the CO rotation-vibration band-head at 4.6 micron on the mid-IR photometry. We confirm the temperature sensitivity of the CO band-head at 4.6 micron and find no evidence for an effect at 3.6 micron. We compare the ([3.6]-[4.5]) period-colour relations in the MW, LMC and SMC. The slopes of the period-colour relations for the three galaxies are in good agreement, but there is a trend in zero-point with metallicity, with the lowest metallicity Cepheids having redder mid-IR colours. Finally, we present a colour-[Fe/H] relation based on published spectroscopic metallicities. This empirical relation, calibrated to the metallicity system of Genovali et al., demonstrates that the ([3.6]-[4.5]) colour provides a reliable metallicity indicator for Cepheids, with a precision comparable to current spectroscopic determinations.

Status of 2 micron laser technology program

Science.gov (United States)

Storm, Mark

1991-01-01

The status of 2 micron lasers for windshear detection is described in viewgraph form Theoretical atmospheric and instrument system studies have demonstrated that the 2.1 micron Ho:YAG lasers can effectively measure wind speeds in both wet and dry conditions with accuracies of 1 m/sec. Two micron laser technology looks very promising in the near future, but several technical questions remain. The Ho:YAG laser would be small, compact, and efficient, requiring little or no maintenance. Since the Ho:YAG laser is laser diode pumped and has no moving part, the lifetime of this laser would be directly related to the diode laser lifetimes which can perform in excess of 10,000 hours. Efficiencies of 3 to 12 percent are expected, but laser demonstrations confirming the ability to Q-switch this laser are required. Coherent laser operation has been demonstrated for both the CW and Q-switched lasers.

Indium Sulfide and Indium Oxide Thin Films Spin-Coated from Triethylammonium Indium Thioacetate Precursor for n-Channel Thin Film Transistor

Energy Technology Data Exchange (ETDEWEB)

Tung, Duy Dao; Jeong, Hyun Dam [Chonnam Natioal University, Gwangju (Korea, Republic of)

2014-09-15

The In{sub 2}S{sub 3} thin films of tetragonal structure and In{sub 2}O{sub 3} films of cubic structure were synthesized by a spin coating method from the organometallic compound precursor triethylammonium indium thioacetate ([(Et){sub 3}NH]+ [In(SCOCH{sub 3}){sub 4}]''-; TEA-InTAA). In order to determine the electron mobility of the spin-coated TEA-InTAA films, thin film transistors (TFTs) with an inverted structure using a gate dielectric of thermal oxide (SiO{sub 2}) was fabricated. These devices exhibited n-channel TFT characteristics with a field-effect electron mobility of 10.1 cm''2 V''-1s''-1 at a curing temperature of 500 o C, indicating that the semiconducting thin film material is applicable for use in low-cost, solution-processed printable electronics.

Atomic layer deposition of boron-containing films using B{sub 2}F{sub 4}

Energy Technology Data Exchange (ETDEWEB)

Mane, Anil U., E-mail: amane@anl.gov; Elam, Jeffrey W. [Argonne National Laboratory, Argonne, Illinois 60126 (United States); Goldberg, Alexander; Halls, Mathew D. [Schrödinger, Inc., San Diego, California 92122 (United States); Seidel, Thomas E. [Seitek50, Palm Coast, Florida 32135 (United States); Current, Michael I. [Current Scientific, San Jose, California 95124 (United States); Despres, Joseph; Byl, Oleg; Tang, Ying; Sweeney, Joseph [Entegris, Danbury, Connecticut 06810 (United States)

2016-01-15

Ultrathin and conformal boron-containing atomic layer deposition (ALD) films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B{sub 2}F{sub 4}) was explored as an ALD precursor for the deposition of boron containing films. Density functional theory simulations for nucleation on silicon (100) surfaces indicated better reactivity of B{sub 2}F{sub 4} in comparison to BF{sub 3}. Quartz crystal microbalance experiments exhibited growth using either B{sub 2}F{sub 4}-H{sub 2}O for B{sub 2}O{sub 3} ALD, or B{sub 2}F{sub 4}-disilane (Si{sub 2}H{sub 6}) for B ALD, but in both cases, the initial growth per cycle was quite low (≤0.2 Å/cycle) and decreased to near zero growth after 8–30 ALD cycles. However, alternating between B{sub 2}F{sub 4}-H{sub 2}O and trimethyl aluminum (TMA)-H{sub 2}O ALD cycles resulted in sustained growth at ∼0.65 Å/cycle, suggesting that the dense –OH surface termination produced by the TMA-H{sub 2}O combination enhances the uptake of B{sub 2}F{sub 4} precursor. The resultant boron containing films were analyzed for composition by x-ray photoelectron spectroscopy, and capacitance measurements indicated an insulating characteristic. Finally, diffused boron profiles less than 100 Å were obtained after rapid thermal anneal of the boron containing ALD film.

Reliable computer systems.

Science.gov (United States)

Wear, L L; Pinkert, J R

1993-11-01

In this article, we looked at some decisions that apply to the design of reliable computer systems. We began with a discussion of several terms such as testability, then described some systems that call for highly reliable hardware and software. The article concluded with a discussion of methods that can be used to achieve higher reliability in computer systems. Reliability and fault tolerance in computers probably will continue to grow in importance. As more and more systems are computerized, people will want assurances about the reliability of these systems, and their ability to work properly even when sub-systems fail.

Temperature sensitivity analysis of polarity controlled electrostatically doped tunnel field-effect transistor

Science.gov (United States)

Nigam, Kaushal; Pandey, Sunil; Kondekar, P. N.; Sharma, Dheeraj

2016-09-01

The conventional tunnel field-effect transistors (TFETs) have shown potential to scale down in sub-22 nm regime due to its lower sub-threshold slope and robustness against short-channel effects (SCEs), however, sensitivity towards temperature variation is a major concern. Therefore, for the first time, we investigate temperature sensitivity analysis of a polarity controlled electrostatically doped tunnel field-effect transistor (ED-TFET). Different performance metrics and analog/RF figure-of-merits were considered and compared for both devices, and simulations were performed using Silvaco ATLAS device tool. We found that the variation in ON-state current in ED-TFET is almost temperature independent due to electrostatically doped mechanism, while, it increases in conventional TFET at higher temperature. Above room temperature, the variation in ION, IOFF, and SS sensitivity in ED-TFET are only 0.11%/K, 2.21%/K, and 0.63%/K, while, in conventional TFET the variations are 0.43%/K, 2.99%/K, and 0.71%/K, respectively. However, below room temperature, the variation in ED-TFET ION is 0.195%/K compared to 0.27%/K of conventional TFET. Moreover, it is analysed that the incomplete ionization effect in conventional TFET severely affects the drive current and the threshold voltage, while, ED-TFET remains unaffected. Hence, the proposed ED-TFET is less sensitive towards temperature variation and can be used for cryogenics as well as for high temperature applications.

Method for measuring energy-input inhomogeneities in electroionization CO/sub 2/-lasers

Energy Technology Data Exchange (ETDEWEB)

Borovkov, V V; Kornilov, V G; Sukhanov, L V; Chelpanov, V I

1987-08-01

A Michelson interferometer at a wavelength of 0.63 micron was used to measure optical inhomogeneities due to variations of the polarizability of the molecular components in CO/sub 2/-laser mixtures under vibrational excitation in a nonself-sustained electric discharge. It is suggested that the observed effect can be used for the noninertial and noncontact diagnostics of energy-input distribution over the cross section of the active medium of an electroionization CO/sub 2/-laser. Results are presented for N/sub 2/-He, CO/sub 2/-He, CO/sub 2/-N/sub 2/-He, and CO/sub 2/-He mixtures. 10 references.

Transistor reset preamplifier for high-rate high-resolution spectroscopy

International Nuclear Information System (INIS)

Landis, D.A.; Cork, C.P.; Madden, N.W.; Goulding, F.S.

1981-10-01

Pulsed transistor reset of high resolution charge sensitive preamplifiers used in cooled semiconductor spectrometers can sometimes have an advantage over pulsed light reset systems. Several versions of transistor reset spectrometers using both silicon and germanium detectors have been built. This paper discusses the advantages of the transistor reset system and illustrates several configurations of the packages used for the FET and reset transistor. It also describes the preamplifer circuit and shows the performance of the spectrometer at high rates

Determination of the band alignment of a-IGZO/a-IGMO heterojunction for high-electron mobility transistor application

Energy Technology Data Exchange (ETDEWEB)

Zhang, Yi-Yu; Qian, Ling-Xuan; Liu, Xing-Zhao [School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu (China); State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu (China)

2017-10-15

In the past decade, amorphous InGaZnO thin film transistors (a-IGZO TFTs) have become a very promising candidate for application in flat panel displays (FPDs). However, it is difficult to break through the mobility bottleneck of a-IGZO TFTs to obtain mobilities higher than 100 cm{sup 2} V{sup -1} s{sup -1}, thus limiting their use in more advanced applications. Construction of a high-electron mobility transistor (HEMT) based on a heterojunction structure could provide a solution for this problem. In this work, the band alignment of a-IGZO and amorphous InGaMgO (a-IGMO) heterojunction has been investigated using X-ray photoelectron spectroscopy (XPS) and transmission spectra measurements. The valence band (ΔE{sub V}) and conduction band offsets (ΔE{sub C}) were determined as 0.09 and 0.83 eV, respectively. The ΔE{sub C} was large enough to construct a potential well that could favor the appearance of a two-dimensional electron gas (2DEG). Hence, the achievement of an HEMT based on a-IGZO/a-IGMO heterojunction can be expected. Moreover, band bending contributed greatly to such a large ΔE{sub C}, and thus to the formation of electrical confinement structure. Our findings suggest that a-IGZO/a-IGMO heterojunction is a potential candidate for constructing a HEMT and thus breaking through the mobility bottleneck of a-IGZO-based TFTs for the applications in next-generation electronic products. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

International Nuclear Information System (INIS)

Lin, Hung-Cheng; Zan, Hsiao-Wen; Chao, Yu-Chiang; Chang, Ming-Yu; Meng, Hsin-Fei

2015-01-01

In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space–charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated. (paper)

Dependence of vortex phase transitions in mesoscopic Bi{sub 2}Sr{sub 2}CaCuO{sub 8} superconductor at tilted magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Dolz, M I; Pastoriza, H, E-mail: mdolz@cab.cnea.gov.a, E-mail: hernan@cab.cnea.gov.a [Centro Atomico Bariloche, Comision Nacional de Energa Atomica and CONICET, R8402AGP S. C. de Bariloche (Argentina)

2009-03-01

A micron sized single crystal of the superconductor Bi{sub 2}Sr{sub 2}CaCuO{sub 8} was studied using silicon mechanical micro-oscillators at various tilt angles of the dc magnetic field with respect to the c axis of the sample. Different phases of the vortex matter were detected by measuring changes in the value and sign of the oscillator resonant frequency variation with temperature. We could explain the change in the sign of this variation at high temperatures as the transition from the 2D liquid of decoupled pancakes to a reversible 3D vortex lattice. The data indicates that this transition only depends on the magnetic field perpendicular to the superconducting layers while the dissipation involved in this process depends on the component parallel to them.

Protonic transistors from thin reflecting films

Energy Technology Data Exchange (ETDEWEB)

Ordinario, David D.; Phan, Long; Jocson, Jonah-Micah [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Nguyen, Tam [Department of Chemistry, University of California, Irvine, California 92697 (United States); Gorodetsky, Alon A., E-mail: alon.gorodetsky@uci.edu [Department of Chemical Engineering and Materials Science, University of California, Irvine, California 92697 (United States); Department of Chemistry, University of California, Irvine, California 92697 (United States)

2015-01-01

Ionic transistors from organic and biological materials hold great promise for bioelectronics applications. Thus, much research effort has focused on optimizing the performance of these devices. Herein, we experimentally validate a straightforward strategy for enhancing the high to low current ratios of protein-based protonic transistors. Upon reducing the thickness of the transistors’ active layers, we increase their high to low current ratios 2-fold while leaving the other figures of merit unchanged. The measured ratio of 3.3 is comparable to the best values found for analogous devices. These findings underscore the importance of the active layer geometry for optimum protonic transistor functionality.

Method and apparatus for sub-hysteresis discrimination

Science.gov (United States)

De Geronimo, Gianluigi

2015-12-29

Embodiments of comparator circuits are disclosed. A comparator circuit may include a differential input circuit, an output circuit, a positive feedback circuit operably coupled between the differential input circuit and the output circuit, and a hysteresis control circuit operably coupled with the positive feedback circuit. The hysteresis control circuit includes a switching device and a transistor. The comparator circuit provides sub-hysteresis discrimination and high speed discrimination.

High mobility and quantum well transistors design and TCAD simulation

CERN Document Server

Hellings, Geert

2013-01-01

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

Electronic transport mechanisms in scaled gate-all-around silicon nanowire transistor arrays

Energy Technology Data Exchange (ETDEWEB)

Clément, N., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr; Han, X. L. [Institute of Electronics, Microelectronics and Nanotechnology, CNRS, Avenue Poincaré, 59652 Villeneuve d' Ascq (France); Larrieu, G., E-mail: nicolas.clement@iemn.univ-lille1.fr, E-mail: guilhem.larrieu@laas.fr [Laboratory for Analysis and Architecture of Systems (LAAS), CNRS, Universite de Toulouse, 7 Avenue Colonel Roche, 31077 Toulouse (France)

2013-12-23

Low-frequency noise is used to study the electronic transport in arrays of 14 nm gate length vertical silicon nanowire devices. We demonstrate that, even at such scaling, the electrostatic control of the gate-all-around is sufficient in the sub-threshold voltage region to confine charges in the heart of the wire, and the extremely low noise level is comparable to that of high quality epitaxial layers. Although contact noise can already be a source of poor transistor operation above threshold voltage for few nanowires, nanowire parallelization drastically reduces its impact.

Characteristics of Novel InGaAsN Double Heterojunction Bipolar Transistors

Energy Technology Data Exchange (ETDEWEB)

LI,N.Y.; CHANG,PING-CHIH; BACA,ALBERT G.; LAROCHE,J.R.; REN,F.; ARMOUR,E.; SHARPS,P.R.; HOU,H.Q.

2000-08-01

The authors demonstrate, for the first time, both functional Pnp AlGaAs/InGaAsN/GaAs (Pnp InGaAsN) and Npn InGaP/InGaAsN/GaAs (Npn InGaAsN) double heterojunction bipolar transistors (DHBTs) using a 1.2 eV In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} as the base layer for low-power electronic applications. The Pnp InGaAsN DHBT has a peak current gain ({beta}) of 25 and a low turn-on voltage (V{sub ON}) of 0.79 V. This low V{sub ON} is {approximately} 0.25 V lower than in a comparable Pnp AlGAAs/GaAs HBT. For the Npn InGaAsN DHBT, it has a low V{sub ON} of 0.81 V, which is 0.13 V lower than in an InGaP/GaAs HBT. A peak {beta} of 7 with nearly ideal I-V characteristics has been demonstrated. Since GaAs is used as the collector of both Npn and Pnp InGaAsN DHBTs, the emitter-collector breakdown voltage (BV{sub CEO}) are 10 and 12 V, respectively, consistent with the BV{sub CEO} of Npn InGaP/GaAs and Pnp AlGaAs/GaAs HBTs of comparable collector thickness and doping level. All these results demonstrate the potential of InGaAsN DHBTs as an alternative for application in low-power electronics.

Reliability study of a small-scale fuel processor system (STUR-10 kWH{sub 2})

Energy Technology Data Exchange (ETDEWEB)

Jannasch, Anna-Karin; Silversand, Fredrik [CATATOR AB, Lund (Sweden)

2004-12-01

During 2003, Catator AB finalized the development of an atmospheric ultra compact hydrogen generator (close to 1 Nm{sup 3}/h of produced H{sub 2} per liter gross volume), Ultraformer or Single-Train Ultraformer Reactor (abbreviated STUR). The overarching goal of this work was to present a compact and scalable reactor design including fuel processing and CO purification in order to reach low temperature fuel cell quality (i.e. < 20 ppm CO). The unit can run on a variety of feed stocks, i.e. biogas, natural gas, LPG, alcohols and heavier hydrocarbons. It also has a wide turndown ratio (about 1:10), a high thermal efficiency (80%), and enables a rapid start-up. The evaluation of a fully integrated 30 kWH{sub 2} STUR unit showed that the characteristics listed above could be reached. This work is a following-up study of the previously concluded work. The project was administrated by the Swedish Gas Centre AB (SGC), and was financed by the companies Sydkraft Gas AB, Foersvarets Materialverk, the Swedish Energy Agency, Catator AB and OptiCat International AB. The work has involved the development and the construction of an optimized STUR-system designed for the nominal capacity of 10 kWH{sub 2} (i.e. 3 Nm{sup 3}/h H{sub 2(g)}). Compared to the earlier evaluated 30 kWH{sub 2} unit, this system has been optimized with respect to the design of the integrated catalytic burner, from which heat is supplied to the steam reforming reaction, and with respect to the overall heat recovery of the system. The project included a risk analysis of the system and implementation of a security system for enable fully automatic, partly non-supervised, long term testing. The latter was for enabling a reliability study of the STUR-system during a longer period of continuous operation time ({approx}500 h). The feed stock used throughout this evaluation work was natural gas. The overall scope of the long time operation test was to identify any existing degradation phenomena and weaknesses of

Impact-disrupted gunshot residue: A sub-micron analysis using a novel collection protocol

Directory of Open Access Journals (Sweden)

V. Spathis

2017-06-01

Full Text Available The analysis of gunshot residue (GSR has played an integral role within the legal system in relation to shooting cases. With a characteristic elemental composition of lead, antimony, barium, and a typically discriminative spheroidal morphology, the presence and distribution of GSR can aid in firearm investigations. In this experiment, three shots of low velocity rim-fire ammunition were fired over polished silicon collection substrates placed at six intervals over a 100 cm range. The samples were analysed using a Field Emission Gun Scanning Electron Microscope (FEG-SEM in conjunction with an X-flash Energy Dispersive X-ray (EDX detector, allowing for GSR particle analyses of composition and structure at the sub-micron level. The results of this experiment indicate that although classic spheroidal particles are present consistently throughout the entire range of samples their sizes vary significantly, and at certain distances from the firearm particles with an irregular morphology were discerned, forming “impact-disrupted” GSR particles, henceforth colloquially referred to as “splats”. Upon further analysis, trends with regards to the formation of these splat particles were distinguished. An increase in splat frequency was observed starting at 10 cm from the firearm, with 147 mm−2 splat density, reaching a maximal flux at 40 cm (451 mm−2, followed by a gradual decrease to the maximum range sampled. Moreover, the structural morphology of the splats changes throughout the sampling range. At the distances closest to the firearm, molten-looking particles were formed, demonstrating the metallic residues were in a liquid state when their flight path was disrupted. However, at increased distances-primarily where the discharge plume was at maximum dispersion and moving away from the firearm, the residues have had time to cool in-fight resulting in semi-congealed and solid particles that subsequently disrupted upon impact, forming more

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

Science.gov (United States)

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Piezoelectric potential gated field-effect transistor based on a free-standing ZnO wire.

Science.gov (United States)

Fei, Peng; Yeh, Ping-Hung; Zhou, Jun; Xu, Sheng; Gao, Yifan; Song, Jinhui; Gu, Yudong; Huang, Yanyi; Wang, Zhong Lin

2009-10-01

We report an external force triggered field-effect transistor based on a free-standing piezoelectric fine wire (PFW). The device consists of an Ag source electrode and an Au drain electrode at two ends of a ZnO PFW, which were separated by an insulating polydimethylsiloxane (PDMS) thin layer. The working principle of the sensor is proposed based on the piezoelectric potential gating effect. Once subjected to a mechanical impact, the bent ZnO PFW cantilever creates a piezoelectric potential distribution across it width at its root and simultaneously produces a local reverse depletion layer with much higher donor concentration than normal, which can dramatically change the current flowing from the source electrode to drain electrode when the device is under a fixed voltage bias. Due to the free-standing structure of the sensor device, it has a prompt response time less than 20 ms and quite high and stable sensitivity of 2%/microN. The effect from contact resistance has been ruled out.

Failure of the integrated circuits involving complementary MOS transistors under thermal and ionizing radiation stresses

International Nuclear Information System (INIS)

Sarrabayrouse, G.; Rossel, P.; Buxo, J.; Vialaret, G.

Some criteria for reliability and sorting of complementary MOS transistor integrated circuits are proposed, that take account for special environmental stresses near plane reactors or nuclear reactor cores. An analysis of the damaging causes for these circuits at high and low temperatures is proposed, results obtained on the evolution of these devices under irradiation and irradiation behaviors are discussed. The whole set of experiments has been carried out on CD 4007 AD(K) circuits [fr

SiC for microwave power transistors

Energy Technology Data Exchange (ETDEWEB)

Sriram, S.; Siergiej, R.R.; Clarke, R.C.; Agarwal, A.K.; Brandt, C.D. [Northrop Grumman Sci. and Technol. Center, Pittsburgh, PA (United States)

1997-07-16

The advantages of SiC for high power, microwave devices are discussed. The design considerations, fabrication, and experimental results are described for SiC MESFETs and SITs. The highest reported f{sub max} for a 0.5 {mu}m MESFET using semi-insulating 4H-SiC is 42 GHz. These devices also showed a small signal gain of 5.1 dB at 20 GHz. Other 4H-SiC MESFETs have shown a power density of 3.3 W/mm at 850 MHz. The largest SiC power transistor reported is a 450 W SIT measured at 600 MHz. The power output density of this SIT is 2.5 times higher than that of comparable silicon devices. SITs have been designed to operate as high as 3.0 GHz, with a 3 cm periphery part delivering 38 W of output power. (orig.) 28 refs.

Hydrothermal synthesis of WO{sub 3}·0.5H{sub 2}O microtubes with excellent photocatalytic properties

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaozhou; Meng, Xiuqing, E-mail: xqmeng@semi.ac.cn; Zhong, Mianzeng; Wu, Fengmin; Li, Jingbo, E-mail: jbli@semi.ac.cn

2013-10-01

Pyrochlore WO{sub 3} microtubes were synthesized via a hydrothermal method for the first time. In this process, thiourea was employed to overcome the hydrogen bonds on the rim of WO{sub 3}·0.5H{sub 2}O and hydroxylamine hydrochloride was used as a viscosity regulator. Field-emission scanning electron microscopy and high-resolution transmission electron microscopy observations revealed that large amounts of uniform single-crystal WO{sub 3}·0.5H{sub 2}O microtubes with diameters ranging from 100 to 300 nm and length of tens of micrometers were obtained. The thickness of the tube wall was about 40 nm. A possible rolling mechanism was proposed to explain the formation of the tubular structures, and the influence of thiourea and hydroxylamine hydrochloride on the uniform tubular morphology was discussed. The WO{sub 3}·0.5H{sub 2}O microtubes showed excellent photocatalytic activity toward the degradation of organic molecules such as RhB, which may find potential applications in the fields of photocatalysts, sensors and transistors.

Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

International Nuclear Information System (INIS)

Sarma, R.; Saikia, D.

2010-01-01

We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

Performance Enhancement of Power Transistors and Radiation effect

International Nuclear Information System (INIS)

Hassn, Th.A.A.

2012-01-01

The main objective of this scientific research is studying the characteristic of bipolar junction transistor device and its performance under radiation fields and temperature effect as a control element in many power circuits. In this work we present the results of experimental measurements and analytical simulation of gamma – radiation effects on the electrical characteristics and operation of power transistor types 2N3773, 2N3055(as complementary silicon power transistor are designed for general-purpose switching and amplifier applications), three samples of each type were irradiated by gamma radiation with doses, 1 K rad, 5 K rad, 10 K rad, 30 K rad, and 10 Mrad, the experimental data are utilized to establish an analytical relation between the total absorbed dose of gamma irradiation and corresponding to effective density of generated charge in the internal structure of transistor, the electrical parameters which can be measured to estimate the generated defects in the power transistor are current gain, collector current and collected emitter leakage current , these changes cause the circuit to case proper functioning. Collector current and transconductance of each device are calibrated as a function of irradiated dose. Also the threshold voltage and transistor gain can be affected and also calibrated as a function of dose. A silicon NPN power transistor type 2N3773 intended for general purpose applications, were used in this work. It was designed for medium current and high power circuits. Performance and characteristic were discusses under temperature and gamma radiation doses. Also the internal junction thermal system of the transistor represented in terms of a junction thermal resistance (Rjth). The thermal resistance changed by ΔRjth, due to the external intended, also due to the gamma doses intended. The final result from the model analysis reveals that the emitter-bias configuration is quite stable by resistance ratio RB/RE. Also the current

Outlook and emerging semiconducting materials for ambipolar transistors.

Science.gov (United States)

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and characterization of monodisperse, mesoporous, and magnetic sub-micron particles doped with a near-infrared fluorescent dye

International Nuclear Information System (INIS)

Le Guevel, Xavier; Nooney, Robert; McDonagh, Colette; MacCraith, Brian D.

2011-01-01

Recently, multifunctional silica nanoparticles have been investigated extensively for their potential use in biomedical applications. We have prepared sub-micron monodisperse and stable multifunctional mesoporous silica particles with a high level of magnetization and fluorescence in the near infrared region using an one-pot synthesis technique. Commercial magnetite nanocrystals and a conjugated-NIR-dye were incorporated inside the particles during the silica condensation reaction. The particles were then coated with polyethyleneglycol to stop aggregation. X-ray diffraction, N 2 adsorption analysis, TEM, fluorescence and absorbance measurements were used to structurally characterize the particles. These mesoporous silica spheres have a large surface area (1978 m 2 /g) with 3.40 nm pore diameter and a high fluorescence in the near infrared region at λ=700 nm. To explore the potential of these particles for drug delivery applications, the pore accessibility to hydrophobic drugs was simulated by successfully trapping a hydrophobic ruthenium dye complex inside the particle with an estimated concentration of 3 wt%. Fluorescence imaging confirmed the presence of both NIR dye and the post-grafted ruthenium dye complex inside the particles. These particles moved at approximately 150 μm/s under the influence of a magnetic field, hence demonstrating the multifunctionality and potential for biomedical applications in targeting and imaging. - Graphical Abstract: Hydrophobic fluorescent Ruthenium complex has been loaded into the mesopores as a surrogate drug to simulate drug delivery and to enhance the multifunctionality of the magnetic NIR emitting particles. Highlights: → Monodisperse magnetic mesoporous silica particles emitting in the near infrared region are obtained in one-pot synthesis. → We prove the capacity of such particles to uptake hydrophobic dye to mimic drug loading. → Loaded fluorescent particles can be moved under a magnetic field in a microfluidic

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