Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process; Utilisation d'une nouvelle reflectometrie spectroscopique pour optimiser un procede de fabrication CMOS/SOS durci aux radiations

Energy Technology Data Exchange (ETDEWEB)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D. [Raytheon Systems company, Microelectronics Div., Newport Beach, California (United States); Li, G.P.; Tsai, C.S. [California Univ., School of Engineering, Newport Beach, CA (United States)

1999-07-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Reduced impact of induced gate noise on inductively degenerated LNAs in deep submicron CMOS technologies

DEFF Research Database (Denmark)

Rossi, P.; Svelto, F.; Mazzanti, A.

2005-01-01

Designers of radio-frequency inductively-degenerated CMOS low-noise-amplifiers have usually not followed the guidelines for achieving minimum noise figure. Nonetheless, state-of-the- art implementations display noise figure values very close to the theoretical minimum. In this paper, we point out...... that this is due to the effect of the parasitic overlap capacitances in the MOS device. In particular, we show that overlap capacitances lead to a significant induced-gate-noise reduction, especially when deep sub-micron CMOS processes are used....

Using a novel spectroscopic reflectometer to optimize a radiation-hardened submicron silicon-on-sapphire CMOS process

International Nuclear Information System (INIS)

Do, N.T.; Zawaideh, E.; Vu, T.Q.; Warren, G.; Mead, D.; Do, N.T.; Li, G.P.; Tsai, C.S.

1999-01-01

A radiation-hardened sub-micron silicon-on-sapphire CMOS process is monitored and optimized using a novel optical technique based on spectroscopic reflectometry. Quantitative measurements of the crystal quality, surface roughness, and device radiation hardness show excellent correlation between this technique and the Atomic Force Microscopy. (authors)

Fabrication, microstructure, and mechanical properties of high strength cobalt sub-micron structures

International Nuclear Information System (INIS)

Jin Sumin; Burek, Michael J.; Evans, Robert D.; Jahed, Zeinab; Leung, Michael C.; Evans, Neal D.; Tsui, Ting Y.

2012-01-01

The mechanical properties exhibited by sub-micron scale columnar structures of cobalt, fabricated by electron beam lithography and electroplating techniques, were investigated through uniaxial compression. Transmission electron microscopy analyses show these specimens possess a microstructure with sub-micron grains which are elongated and aligned near to the pillar loading axis. In addition, small nanocrystalline cobalt crystals are also present within the columnar structure. These specimens display exceptional mechanical strength comparable with both bulk polycrystalline and nanocrystalline cobalt deposited by electroplating. Size-dependent softening with shrinking sample dimensions is also observed in this work. Additionally, the strength of these sub-micron structures appears to be strain rate sensitive and comparable with bulk nanocrystalline cobalt specimens.

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

Energy Technology Data Exchange (ETDEWEB)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2012-11-15

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode show better performance compared to n{sup -}well/p{sup -}sub and n{sup -}well/p{sup -}epi/p{sup -}sub due to the wider depletion width. Comparing n{sup +}/p{sup -}sub and n{sup +}/p{sup -}epi/p{sup -}sub photodiode, n{sup +}/p{sup -}sub has higher photo-responsivity in longer wavelength because of

Photoresponse analysis of the CMOS photodiodes for CMOS x-ray image sensor

International Nuclear Information System (INIS)

Kim, Young Soo; Ha, Jang Ho; Kim, Han Soo; Yeo, Sun Mok

2012-01-01

Although in the short term CMOS active pixel sensors (APSs) cannot compete with the conventionally used charge coupled devices (CCDs) for high quality scientific imaging, recent development in CMOS APSs indicate that CMOS performance level of CCDs in several domains. CMOS APSs possess thereby a number of advantages such as simpler driving requirements and low power operation. CMOS image sensors can be processed in standard CMOS technologies and the potential of on-chip integration of analog and digital circuitry makes them more suitable for several vision systems where system cost is of importance. Moreover, CMOS imagers can directly benefit from on-going technological progress in the field of CMOS technologies. Due to these advantages, the CMOS APSs are currently being investigated actively for various applications such as star tracker, navigation camera and X-ray imaging etc. In most detection systems, it is thought that the sensor is most important, since this decides the signal and noise level. So, in CMOS APSs, the pixel is very important compared to other functional blocks. In order to predict the performance of such image sensor, a detailed understanding of the photocurrent generation in the photodiodes that comprise the CMOS APS is required. In this work, we developed the analytical model that can calculate the photocurrent generated in CMOS photodiode comprising CMOS APSs. The photocurrent calculations and photo response simulations with respect to the wavelength of the incident photon were performed using this model for four types of photodiodes that can be fabricated in standard CMOS process. n + /p - sub and n + /p - epi/p - sub photodiode show better performance compared to n - well/p - sub and n - well/p - epi/p - sub due to the wider depletion width. Comparing n + /p - sub and n + /p - epi/p - sub photodiode, n + /p - sub has higher photo-responsivity in longer wavelength because of the higher electron diffusion current

Radiation hardness tests and characterization of the CLARO-CMOS, a low power and fast single-photon counting ASIC in 0.35 micron CMOS technology

International Nuclear Information System (INIS)

Fiorini, M.; Andreotti, M.; Baldini, W.; Calabrese, R.; Carniti, P.; Cassina, L.; Cotta Ramusino, A.; Giachero, A.; Gotti, C.; Luppi, E.; Maino, M.; Malaguti, R.; Pessina, G.; Tomassetti, L.

2014-01-01

The CLARO-CMOS is a prototype ASIC that allows fast photon counting with 5 ns peaking time, a recovery time to baseline smaller than 25 ns, and a power consumption of less than 1 mW per channel. This chip is capable of single-photon counting with multi-anode photomultipliers and finds applications also in the read-out of silicon photomultipliers and microchannel plates. The prototype is realized in AMS 0.35 micron CMOS technology. In the LHCb RICH environment, assuming 10 years of operation at the nominal luminosity expected after the upgrade in Long Shutdown 2 (LS2), the ASIC must withstand a total fluence of about 6×10 12 1 MeV n eq /cm 2 and a total ionizing dose of 400 krad. A systematic evaluation of the radiation effects on the CLARO-CMOS performance is therefore crucial to ensure long term stability of the electronics front-end. The results of multi-step irradiation tests with neutrons and X-rays up to the fluence of 10 14 cm −2 and a dose of 4 Mrad, respectively, are presented, including measurement of single event effects during irradiation and chip performance evaluation before and after each irradiation step. - Highlights: • CLARO chip capable of single-photon counting with 5 ns peaking time. • Chip irradiated up to very high neutron, proton and X-rays fluences, as expected for upgraded LHCb RICH detectors. • No significant performance degradation is observed after irradiation

Synthesis and characterization of hollow {alpha}-Fe{sub 2}O{sub 3} sub-micron spheres prepared by sol-gel

Energy Technology Data Exchange (ETDEWEB)

Leon, Lizbet, E-mail: lizbetlf@gmail.com; Bustamante, Angel; Osorio, Ana; Olarte, G. S. [Universidad Nacional Mayor de San Marcos (Peru); Santos Valladares, Luis De Los, E-mail: ld301@cam.ac.uk; Barnes, Crispin H. W. [University of Cambridge, Cavendish Laboratory (United Kingdom); Majima, Yutaka [Tokyo Institute of Technology, Materials and Structures Laboratory (Japan)

2011-11-15

In this work we report the preparation of magnetic hematite hollow sub-micron spheres ({alpha}-Fe{sub 2}O{sub 3}) by colloidal suspensions of ferric nitrate nine-hydrate (Fe(NO{sub 3}){sub 3}{center_dot}9H{sub 2}O) particles in citric acid solution by following the sol-gel method. After the gel formation, the samples were annealed at different temperatures in an oxidizing atmosphere. Annealing at 180 Degree-Sign C resulted in an amorphous phase, without iron oxide formation. Annealing at 250 Degree-Sign C resulted in coexisting phases of hematite, maghemite and magnetite, whereas at 400 Degree-Sign C, only hematite and maghemite were found. Pure hematite hollow sub-micron spheres with porous shells were formed after annealing at 600 Degree-Sign C. The characterization was performed by X-ray diffraction (XRD), Moessbauer spectroscopy (MS) and scanning electron microscopy (SEM).

Study of lead phytoavailability for atmospheric industrial micronic and sub-micronic particles in relation with lead speciation

International Nuclear Information System (INIS)

Uzu, G.; Sobanska, S.; Aliouane, Y.; Pradere, P.; Dumat, C.

2009-01-01

Particles from channelled emissions of a battery recycling facility were size-segregated and investigated to correlate their speciation and morphology with their transfer towards lettuce. Microculture experiments carried out with various calcareous soils spiked with micronic and sub-micronic particles (1650 ± 20 mg Pb kg -1 ) highlighted a greater transfer in soils mixed with the finest particles. According to XRD and Raman spectroscopy results, the two fractions presented differences in the amount of minor lead compounds like carbonates, but their speciation was quite similar, in decreasing order of abundance: PbS, PbSO 4 , PbSO 4 .PbO, α-PbO and Pb 0 . Morphology investigations revealed that PM 2.5 (i.e. Particulate Matter 2.5 composed of particles suspended in air with aerodynamic diameters of 2.5 μm or less) contained many Pb nanoballs and nanocrystals which could influence lead availability. The soil-plant transfer of lead was mainly influenced by size and was very well estimated by 0.01 M CaCl 2 extraction. - The soil-lettuce lead transfer from atmospheric industrial sub-micronic and micronic particles depends on particle size

A Novel Leakage-tolerant Domino Logic Circuit With Feedback From Footer Transistor In Ultra Deep Submicron CMOS

DEFF Research Database (Denmark)

Moradi, Farshad; Peiravi, Ali; Mahmoodi, Hamid

As the CMOS manufacturing process scales down into the ultra deep sub-micron regime, the leakage current becomes an increasingly more important consideration in VLSI circuit design. In this paper, a high speed and noise immune domino logic circuit is presented which uses the property of the footer...

Sub-micron accurate track navigation method ''Navi'' for the analysis of Nuclear Emulsion

International Nuclear Information System (INIS)

Yoshioka, T; Yoshida, J; Kodama, K

2011-01-01

Sub-micron accurate track navigation in Nuclear Emulsion is realized by using low energy signals detected by automated Nuclear Emulsion read-out systems. Using those much dense ''noise'', about 10 4 times larger than the real tracks, the accuracy of the track position navigation reaches to be sub micron only by using the information of a microscope field of view, 200 micron times 200 micron. This method is applied to OPERA analysis in Japan, i.e. support of human eye checks of the candidate tracks, confirmation of neutrino interaction vertexes and to embed missing track segments to the track data read-out by automated systems.

Sub-micron accurate track navigation method ``Navi'' for the analysis of Nuclear Emulsion

Science.gov (United States)

Yoshioka, T.; Yoshida, J.; Kodama, K.

2011-03-01

Sub-micron accurate track navigation in Nuclear Emulsion is realized by using low energy signals detected by automated Nuclear Emulsion read-out systems. Using those much dense ``noise'', about 104 times larger than the real tracks, the accuracy of the track position navigation reaches to be sub micron only by using the information of a microscope field of view, 200 micron times 200 micron. This method is applied to OPERA analysis in Japan, i.e. support of human eye checks of the candidate tracks, confirmation of neutrino interaction vertexes and to embed missing track segments to the track data read-out by automated systems.

Sub-micron filter

Science.gov (United States)

Tepper, Frederick [Sanford, FL; Kaledin, Leonid [Port Orange, FL

2009-10-13

Aluminum hydroxide fibers approximately 2 nanometers in diameter and with surface areas ranging from 200 to 650 m.sup.2/g have been found to be highly electropositive. When dispersed in water they are able to attach to and retain electronegative particles. When combined into a composite filter with other fibers or particles they can filter bacteria and nano size particulates such as viruses and colloidal particles at high flux through the filter. Such filters can be used for purification and sterilization of water, biological, medical and pharmaceutical fluids, and as a collector/concentrator for detection and assay of microbes and viruses. The alumina fibers are also capable of filtering sub-micron inorganic and metallic particles to produce ultra pure water. The fibers are suitable as a substrate for growth of cells. Macromolecules such as proteins may be separated from each other based on their electronegative charges.

Characterization on the coatings of Ni-base alloy with nano- and micron-size Sm{sub 2}O{sub 3} addition prepared by laser deposition

Energy Technology Data Exchange (ETDEWEB)

Zhang Shihong [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)], E-mail: zsh10110903@hotmail.com; Li Mingxi [School of Materials Science and Engineering, Anhui University of Technology, Maanshan City, Anhui Province 243002 (China); Yoon, Jae Hong; Cho, Tong Yul [School of Nano and Advanced Materials Engineering, Changwon National University, 9, Sarim-Dong, Changwon, Gyeongnam 641-773 (Korea, Republic of)

2008-12-01

The coating materials are the powder mixture of micron-size Ni-base alloy powders with both 1.5 wt.% micron-size and nano-size Sm{sub 2}O{sub 3} powders, which are prepared on Q235 steel plate by 2.0 kW CO{sub 2} laser deposition. The results indicate that with rare earth oxide Sm{sub 2}O{sub 3} addition, the width of planar crystallization is smaller than that of the Ni-base alloy coatings. Micron- and nano-Sm{sub 2}O{sub 3}/Ni-base alloy coatings have similar microstructure showing the primary phase of {gamma}-Ni dendrite and eutectic containing {gamma}-Ni and Cr{sub 23}C{sub 6} phases. However, compared to micron-Sm{sub 2}O{sub 3}/Ni-base alloy, preferred orientation of {gamma}-Ni dendrite of nano-Sm{sub 2}O{sub 3}/Ni-base alloy is weakened. Planar crystal of several-{mu}m thickness is first grown and then dendrite growth is observed at 1.5% micron-Sm{sub 2}O{sub 3}/Ni-base alloy coating whereas equiaxed dendrite is grown at 1.5% nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating. Hardness and wear resistance of the coating improves with decreasing Sm{sub 2}O{sub 3} size from micron to nano. The improvement on tribological property of nano-Sm{sub 2}O{sub 3}/Ni-base alloy over micron-Sm{sub 2}O{sub 3}/Ni-base alloy coatings can be attributed to the better resistance of equiaxed dendrite to adhesion interactions during the wear process. In 6 M HNO{sub 3} solution, the corrosion resistance is greatly improved with nano-Sm{sub 2}O{sub 3} addition since the decrease of corrosion ratio along grain-boundary in nano-Sm{sub 2}O{sub 3}/Ni-base alloy coating contributes to harmonization of corrosion potential.

Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

International Nuclear Information System (INIS)

Barnaby, Hugh J.; Mclain, Michael; Esqueda, Ivan Sanchez

2007-01-01

This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits

Small Pixel Hybrid CMOS X-ray Detectors

Science.gov (United States)

Hull, Samuel; Bray, Evan; Burrows, David N.; Chattopadhyay, Tanmoy; Falcone, Abraham; Kern, Matthew; McQuaide, Maria; Wages, Mitchell

2018-01-01

Concepts for future space-based X-ray observatories call for a large effective area and high angular resolution instrument to enable precision X-ray astronomy at high redshift and low luminosity. Hybrid CMOS detectors are well suited for such high throughput instruments, and the Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors, has recently developed new small pixel hybrid CMOS X-ray detectors. These prototype 128x128 pixel devices have 12.5 micron pixel pitch, 200 micron fully depleted depth, and include crosstalk eliminating CTIA amplifiers and in-pixel correlated double sampling (CDS) capability. We report on characteristics of these new detectors, including the best read noise ever measured for an X-ray hybrid CMOS detector, 5.67 e- (RMS).

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

Science.gov (United States)

Zheng, Qi-Wen; Yu, Xue-Feng; Cui, Jiang-Wei; Guo, Qi; Ren, Di-Yuan; Cong, Zhong-Chao; Zhou, Hang

2014-10-01

Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device.

From vertex detectors to inner trackers with CMOS pixel sensors

CERN Document Server

Besson, A.

2017-01-01

The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.

Pattern imprinting in deep sub-micron static random access memories induced by total dose irradiation

International Nuclear Information System (INIS)

Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan; Cong Zhong-Chao; Zhou Hang

2014-01-01

Pattern imprinting in deep sub-micron static random access memories (SRAMs) during total dose irradiation is investigated in detail. As the dose accumulates, the data pattern of memory cells loading during irradiation is gradually imprinted on their background data pattern. We build a relationship between the memory cell's static noise margin (SNM) and the background data, and study the influence of irradiation on the probability density function of ΔSNM, which is the difference between two data sides' SNMs, to discuss the reason for pattern imprinting. Finally, we demonstrate that, for micron and deep sub-micron devices, the mechanism of pattern imprinting is the bias-dependent threshold shift of the transistor, but for a deep sub-micron device the shift results from charge trapping in the shallow trench isolation (STI) oxide rather than from the gate oxide of the micron-device. (condensed matter: structural, mechanical, and thermal properties)

The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

Energy Technology Data Exchange (ETDEWEB)

Ding Meng [Department of Physics, Jilin University, Changchun 130023 (China); Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China); Yao Bin, E-mail: binyao@jlu.edu.c [Department of Physics, Jilin University, Changchun 130023 (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China); Fang Fang; Shen Dezhen; Zhang Zhenzhong [Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

2010-05-31

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra.

The effect of arsenic thermal diffusion on the morphology and photoluminescence properties of sub-micron ZnO rods

International Nuclear Information System (INIS)

Ding Meng; Yao Bin; Zhao Dongxu; Fang Fang; Shen Dezhen; Zhang Zhenzhong

2010-01-01

As-doped sub-micron ZnO rods were realized by a simple thermal diffusion process using a GaAs wafer as an arsenic resource. The surface of the sub-micron ZnO rods became rough and the morphology of As-doped sub-micron ZnO rods changed markedly with increasing diffusion temperature. From the results of energy-dispersive X-ray spectroscopy, X-ray diffraction and photoluminescence, arsenic elements were confirmed to be introduced into the sub-micron ZnO rods. The acceptor ionization energy was deduced to be about 110 meV based on the temperature-dependent PL spectra.

Deep sub-micron FD-SOI for front-end application

International Nuclear Information System (INIS)

Ikeda, H.; Arai, Y.; Hara, K.; Hayakawa, H.; Hirose, K.; Ikegami, Y.; Ishino, H.; Kasaba, Y.; Kawasaki, T.; Kohriki, T.; Martin, E.; Miyake, H.; Mochizuki, A.; Tajima, H.; Tajima, O.; Takahashi, T.; Takashima, T.; Terada, S.; Tomita, H.; Tsuboyama, T.

2007-01-01

In order to confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented

Mechanisms of Low-Energy Operation of XCT-SOI CMOS Devices—Prospect of Sub-20-nm Regime

Directory of Open Access Journals (Sweden)

Yasuhisa Omura

2014-01-01

Full Text Available This paper describes the performance prospect of scaled cross-current tetrode (XCT CMOS devices and demonstrates the outstanding low-energy aspects of sub-30-nm-long gate XCT-SOI CMOS by analyzing device operations. The energy efficiency improvement of such scaled XCT CMOS circuits (two orders higher stems from the “source potential floating effect”, which offers the dynamic reduction of effective gate capacitance. It is expected that this feature will be very important in many medical implant applications that demand a long device lifetime without recharging the battery.

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Kai; Zhang Yue; Zheng Xue-Feng; Ma Xiao-Hua; Hao Yue

2013-01-01

The hot carrier effect (HCE) of an ultra-deep sub-micron p-channel metal—oxide semiconductor field-effect transistor (pMOSFET) is investigated in this paper. Experiments indicate that the generation of positively charged interface states is the predominant mechanism in the case of the ultra-deep sub-micron pMOSFET. The relation of the pMOSFET hot carrier degradation to stress time (t), channel width (W), channel length (L), and stress voltage (V d ) is then discussed. Based on the relation, a lifetime prediction model is proposed, which can predict the lifetime of the ultra-deep sub-micron pMOSFET accurately and reflect the influence of the factors on hot carrier degradation directly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Scalable production of sub-μm functional structures made of non-CMOS compatible materials on glass

Science.gov (United States)

Arens, Winfried

2014-03-01

Biophotonic and Life Science applications often require non-CMOS compatible materials to be patterned with sub μm resolution. Whilst the mass production of sub μm patterns is well established in the semiconductor industry, semiconductor fabs are limited to using CMOS compatible materials. IMT of Switzerland has implemented a fully automated manufacturing line that allows cost effective mass manufacturing of consumables for biophotonics in substrate materials like D263 glass or fused silica and layer/coating materials like Cr, SiO2, Cr2O5, Nb2O5, Ta2O5 and with some restrictions even gold with sub-μm patterns. The applied processes (lift-off and RIE) offer a high degree of freedom in the design of the consumable.

Characteristics of scandate-impregnated cathodes with sub-micron scandia-doped matrices

International Nuclear Information System (INIS)

Yuan Haiqing; Gu Xin; Pan Kexin; Wang Yiman; Liu Wei; Zhang Ke; Wang Jinshu; Zhou Meiling; Li Ji

2005-01-01

We describe in this paper scandate-impregnated cathodes with sub-micron scandia-doped tungsten matrices having an improved uniformity of the Sc distribution. The scandia-doped tungsten powders were made by both liquid-solid doping and liquid-liquid doping methods on the basis of previous research. By improving pressing, sintering and impregnating procedures, we have obtained scandate-impregnated cathodes with a good uniformity of the Sc 2 O 3 - distribution. The porosity of the sub-micron structure matrix and content of impregnants inside the matrix are similar to those of conventionally impregnated cathodes. Space charge limited current densities of more than 30 A/cm 2 at 850 deg. C b have been obtained in a reproducible way. The current density continuously increases during the first 2000 h life test at 950 deg. C b with a dc load of 2 A/cm 2 and are stable for at least 3000 h

Large area CMOS image sensors

International Nuclear Information System (INIS)

Turchetta, R; Guerrini, N; Sedgwick, I

2011-01-01

CMOS image sensors, also known as CMOS Active Pixel Sensors (APS) or Monolithic Active Pixel Sensors (MAPS), are today the dominant imaging devices. They are omnipresent in our daily life, as image sensors in cellular phones, web cams, digital cameras, ... In these applications, the pixels can be very small, in the micron range, and the sensors themselves tend to be limited in size. However, many scientific applications, like particle or X-ray detection, require large format, often with large pixels, as well as other specific performance, like low noise, radiation hardness or very fast readout. The sensors are also required to be sensitive to a broad spectrum of radiation: photons from the silicon cut-off in the IR down to UV and X- and gamma-rays through the visible spectrum as well as charged particles. This requirement calls for modifications to the substrate to be introduced to provide optimized sensitivity. This paper will review existing CMOS image sensors, whose size can be as large as a single CMOS wafer, and analyse the technical requirements and specific challenges of large format CMOS image sensors.

Kinetics of Sub-Micron Grain Size Refinement in 9310 Steel

Science.gov (United States)

Kozmel, Thomas; Chen, Edward Y.; Chen, Charlie C.; Tin, Sammy

2014-05-01

Recent efforts have focused on the development of novel manufacturing processes capable of producing microstructures dominated by sub-micron grains. For structural applications, grain refinement has been shown to enhance mechanical properties such as strength, fatigue resistance, and fracture toughness. Through control of the thermo-mechanical processing parameters, dynamic recrystallization mechanisms were used to produce microstructures consisting of sub-micron grains in 9310 steel. Starting with initial bainitic grain sizes of 40 to 50 μm, various levels of grain refinement were observed following hot deformation of 9310 steel samples at temperatures and strain rates ranging from 755 K to 922 K (482 °C and 649 °C) and 1 to 0.001/s, respectively. The resulting deformation microstructures were characterized using scanning electron microscopy and electron backscatter diffraction techniques to quantify the extent of carbide coarsening and grain refinement occurring during deformation. Microstructural models based on the Zener-Holloman parameter were developed and modified to include the effect of the ferrite/carbide interactions within the system. These models were shown to effectively correlate microstructural attributes to the thermal mechanical processing parameters.

Nonlinear resistivity in a d-wave superconductor YBa{sub 2}Cu{sub 4}O{sub 8} of sub-micron scale grains

Energy Technology Data Exchange (ETDEWEB)

Deguchi, H; Shoho, T; Kato, Y; Ashida, T; Mito, M; Takagi, S [Faculty of Engineering, Kyushu Institute of Technology, Kitakyushu 804-8550 (Japan); Hagiwara, M [Faculty of Engineering and Design, Kyoto Institute of Technology, Kyoto 606-8585 (Japan); Koyama, K, E-mail: deguchi@tobata.isc.kyutech.ac.jp [Faculty of Integrated Arts and Science, The University of Tokushima 770-8502 (Japan)

2011-07-20

The d-wave ceramic YBa{sub 2}Cu{sub 4}O{sub 8} superconductor composed of sub-micron size grains is considered as random Josephson-coupled network of 0 and {pi} junctions and shows successive phase transitions. The upper transition occurs inside each grain at T{sub c1} = 82 K and the lower transition occurs among the grains at T{sub c2} = 66 K. We measured the temperature dependence of the current-voltage characteristics of the ceramic YBa{sub 2}Cu{sub 4}O{sub 8} and derived the linear and nonlinear resistivity. The nonlinear resistivity {rho}{sub 2} and {rho}{sub 4} have finite values between T{sub c1} and T{sub c2} and have the peak at the same temperature T{sub p} = 70 K above T{sub c2}. The result agrees with the theoretical one obtained by Li and DomInguez. They interpreted T{sub p} as the crossover temperature from the normal state phase to a chiral paramagnetic one.

Fabrication of magnetic and fluorescent chitin and dibutyrylchitin sub-micron particles by oil-in-water emulsification.

Science.gov (United States)

Blanco-Fernandez, Barbara; Chakravarty, Shatadru; Nkansah, Michael K; Shapiro, Erik M

2016-11-01

Chitin is a carbohydrate polymer with unique pharmacological and immunological properties, however, because of its unwieldy chemistry, the synthesis of discreet sized sub-micron particles has not been well reported. This work describes a facile and flexible method to fabricate biocompatible chitin and dibutyrylchitin sub-micron particles. This technique is based on an oil-in-water emulsification/evaporation method and involves the hydrophobization of chitin by the addition of labile butyryl groups onto chitin, disrupting intermolecular hydrogen bonds and enabling solubility in the organic solvent used as the oil phase during fabrication. The subsequent removal of butyryl groups post-fabrication through alkaline saponification regenerates native chitin while keeping particles morphology intact. Examples of encapsulation of hydrophobic dyes and nanocrystals are demonstrated, specifically using iron oxide nanocrystals and coumarin 6. The prepared particles had diameters between 300-400nm for dibutyrylchitin and 500-600nm for chitin and were highly cytocompatible. Moreover, they were able to encapsulate high amounts of iron oxide nanocrystals and were able to label mammalian cells. We describe a technique to prepare sub-micron particles of highly acetylated chitin (>90%) and dibutyrylchitin and demonstrate their utility as carriers for imaging. Chitin is a polysaccharide capable of stimulating the immune system, a property that depends on the acetamide groups, but its insolubility limits its use. No method for sub-micron particle preparation with highly acetylated chitins have been published. The only approach for the preparation of sub-micron particles uses low acetylation chitins. Dibutyrylchitin, a soluble chitin derivative, was used to prepare particles by oil in water emulsification. Butyryl groups were then removed, forming chitin particles. These particles could be suitable for encapsulation of hydrophobic payloads for drug delivery and cell imaging, as well as

New constraints on deformation processes in serpentinite from sub-micron Raman Spectroscopy and TEM

Science.gov (United States)

Smith, S. A. F.; Tarling, M.; Rooney, J. S.; Gordon, K. C.; Viti, C.

2017-12-01

Extensive work has been performed to characterize the mineralogical and mechanical properties of the various serpentine minerals (i.e. antigorite, lizardite, chrysotile, polyhedral and polygonal serpentine). However, correct identification of serpentine minerals is often difficult or impossible using conventional analytical techniques such as optical- and SEM-based microscopy, X-ray diffraction and infrared spectroscopy. Transmission Electron Microscopy (TEM) is the best analytical technique to identify the serpentine minerals, but TEM requires complex sample preparation and typically results in very small analysis areas. Sub-micron confocal Raman spectroscopy mapping of polished thin sections provides a quick and relatively inexpensive way of unambiguously distinguishing the main serpentine minerals within their in-situ microstructural context. The combination of high spatial resolution (with a diffraction-limited system, 366 nm), large-area coverage (up to hundreds of microns in each dimension) and ability to map directly on thin sections allows intricate fault rock textures to be imaged at a sample-scale, which can then form the target of more focused TEM work. The potential of sub-micron Raman Spectroscopy + TEM is illustrated by examining sub-micron-scale mineral intergrowths and deformation textures in scaly serpentinites (e.g. dissolution seams, mineral growth in pressure shadows), serpentinite crack-seal veins and polished fault slip surfaces from a serpentinite-bearing mélange in New Zealand. The microstructural information provided by these techniques has yielded new insights into coseismic dehydration and amorphization processes and the interplay between creep and localised rupture in serpentinite shear zones.

A better ferrimagnetic half-metal LuCu{sub 3}Mn{sub 4}O{sub 12}: Predicted from first-principles investigation

Energy Technology Data Exchange (ETDEWEB)

Lv Shuhui; Li Hongping [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Han Deming; Wu Zhijian [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Liu Xiaojuan, E-mail: lxjuan@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China); Meng Jian, E-mail: jmeng@ciac.jl.c [State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022 (China)

2011-03-15

Electronic structure calculations based on density functional theory (DFT) within the generalized gradient approximation (GGA) and GGA+U for manganite cuprate compound LuCu{sub 3}Mn{sub 4}O{sub 12} have been performed, using the full-potential linearized augmented plane wave method. The calculated results indicate that LuCu{sub 3}Mn{sub 4}O{sub 12} is ferrimagnetic and half-metallic in both GGA and GGA+U calculations. The minority-spin band gap is 0.7 eV within GGA, which is larger than that of LaCu{sub 3}Mn{sub 4}O{sub 12} (0.3 eV), indicating its better half-metallicity. Further, the minority-spin gap enlarges from 0.7 to 2.8 eV with U taken into account, and simultaneously the Fermi level being shifted to the middle of the gap, making the half-metallic energy gap to be 1.21 eV. These results demonstrate that electronic correlation effect enhances the stability of half-metallic property. These facts make this system interesting candidates for applications in spintronic devices. - Research highlights: The electronic and magnetic properties of LuCu{sub 3}Mn{sub 4}O{sub 12} are analyzed. Both GGA and GGA+U methods are reported and compared. A better half-metal LuCu{sub 3}Mn{sub 4}O{sub 12} is obtained with large half-metallic gap. The results agree very well with the experimental data.

Lung deposition of sub-micron aerosols calculated as a function of age and breathing rate

International Nuclear Information System (INIS)

James, A.C.

1978-01-01

Experimental measurements of lung deposition and especially of regional deposition, of aerosols in the sub-micron size range have been so few that it is worthwhile establishing a method of calculation. A computer routine has therefore been developed to calculate aerosol deposition in successive bronchial and bronchiolar generations of the Weibel 'A' model of human lung for the sub-micron size range where deposition occurs solely by diffusion. This model can be scaled to represent lungs at various ages and vital capacities. Some calculated results are presented here and compared with measurements of lung deposition made under carefully controlled conditions in humans. (author)

A review on high-resolution CMOS delay lines: towards sub-picosecond jitter performance.

Science.gov (United States)

Abdulrazzaq, Bilal I; Abdul Halin, Izhal; Kawahito, Shoji; Sidek, Roslina M; Shafie, Suhaidi; Yunus, Nurul Amziah Md

2016-01-01

A review on CMOS delay lines with a focus on the most frequently used techniques for high-resolution delay step is presented. The primary types, specifications, delay circuits, and operating principles are presented. The delay circuits reported in this paper are used for delaying digital inputs and clock signals. The most common analog and digitally-controlled delay elements topologies are presented, focusing on the main delay-tuning strategies. IC variables, namely, process, supply voltage, temperature, and noise sources that affect delay resolution through timing jitter are discussed. The design specifications of these delay elements are also discussed and compared for the common delay line circuits. As a result, the main findings of this paper are highlighting and discussing the followings: the most efficient high-resolution delay line techniques, the trade-off challenge found between CMOS delay lines designed using either analog or digitally-controlled delay elements, the trade-off challenge between delay resolution and delay range and the proposed solutions for this challenge, and how CMOS technology scaling can affect the performance of CMOS delay lines. Moreover, the current trends and efforts used in order to generate output delayed signal with low jitter in the sub-picosecond range are presented.

Sensitivity of MODIS 2.1 micron Channel for Off-Nadir View Angles for Use in Remote Sensing of Aerosol

Science.gov (United States)

Gatebe, C. K.; King, M. D.; Tsay, S.-C.; Ji, Q.

2000-01-01

Remote sensing of aerosol over land, from MODIS will be based on dark targets using mid-IR channels 2.1 and 3.9 micron. This approach was developed by Kaufman et al (1997), who suggested that dark surface reflectance in the red (0.66 micron -- rho(sub 0.66)) channel is half of that at 2.2 micron (rho(sub 2.2)), and the reflectance in the blue (0.49 micron - rho(sub 0.49)) channel is a quarter of that at 2.2 micron. Using this relationship, the surface reflectance in the visible channels can be predicted within Delta.rho(sub 0.49) approximately Delat.rho(sub 0.66) approximately 0.006 from rho(sub 2.2) for rho(sub 2.2) remote sensing of aerosols over land surfaces from space, we are validating the relationships for off-nadir view angles using Cloud Absorption Radiometer (CAR) data. The CAR data are available for channels between 0.3 and 2.3 micron and for different surface types and conditions: forest, tundra, ocean, sea-ice, swamp, grassland and over areas covered with smoke. In this study we analyzed data collected during the Smoke, Clouds, and Radiation - Brazil (SCAR-B) experiment to validate Kaufman et al.'s (1997) results for non-nadir view angles. We will show the correlation between rho(sub 0.472), rho(sub 0.675), and rho(sub 2.2) for view angles between nadir (0 deg) and 55 deg off-nadir, and for different viewing directions in the backscatter and forward scatter directions.

Two micron pore size MCP-based image intensifiers

Science.gov (United States)

Glesener, John; Estrera, Joseph

2010-02-01

Image intensifiers (I2) have many advantages as detectors. They offer single photon sensitivity in an imaging format, they're light in weight and analog I2 systems can operate for hours on a single AA battery. Their light output is such as to exploit the peak in color sensitivity of the human eye. Until recent developments in CMOS sensors, they also were one of the highest resolution sensors available. The closest all solid state solution, the Texas Instruments Impactron chip, comes in a 1 megapixel format. Depending on the level of integration, an Impactron based system can consume 20 to 40 watts in a system configuration. In further investing in I2 technology, L-3 EOS determined that increasing I2 resolution merited a high priority. Increased I2 resolution offers the system user two desirable options: 1) increased detection and identification ranges while maintaining field-of-view (FOV) or 2) increasing FOV while maintaining the original system resolution. One of the areas where an investment in resolution is being made is in the microchannel plate (MCP). Incorporation of a 2 micron MCP into an image tube has the potential of increasing the system resolution of currently fielded systems. Both inverting and non-inverting configurations are being evaluated. Inverting tubes are being characterized in night vision goggle (NVG) and sights. The non-inverting 2 micron tube is being characterized for high resolution I2CMOS camera applications. Preliminary measurements show an increase in the MTF over a standard 5 micron pore size, 6 micron pitch plate. Current results will be presented.

Practical Considerations for Detection and Characterization of Sub-Micron Particles in Protein Solutions by Nanoparticle Tracking Analysis.

Science.gov (United States)

Gruia, Flaviu; Parupudi, Arun; Polozova, Alla

2015-01-01

Nanoparticle Tracking Analysis (NTA) is an emerging analytical technique developed for detection, sizing, and counting of sub-micron particles in liquid media. Its feasibility for use in biopharmaceutical development was evaluated with particle standards and recombinant protein solutions. Measurements of aqueous suspensions of NIST-traceable polystyrene particle standards showed accurate particle concentration detection between 2 × 10(7) and 5 × 10(9) particles/mL. Sizing was accurate for particle standards up to 200 nm. Smaller than nominal value sizes were detected by NTA for the 300-900 nm particles. Measurements of protein solutions showed that NTA performance is solution-specific. Reduced sensitivity, especially in opalescent solutions, was observed. Measurements in such solutions may require sample dilution; however, common sample manipulations, such as dilution and filtration, may result in particle formation. Dilution and filtration case studies are presented to further illustrate such behavior. To benchmark general performance, NTA was compared against asymmetric flow field flow fractionation coupled with multi-angle light scattering (aF4-MALS) and dynamic light scattering, which are other techniques for sub-micron particles. Data shows that all three methods have limitations and may not work equally well under certain conditions. Nevertheless, the ability of NTA to directly detect and count sub-micron particles is a feature not matched by aF4-MALS or dynamic light scattering. Thorough characterization of particulate matter present in protein therapeutics is limited by the lack of analytical methods for particles in the sub-micron size range. Emerging techniques are being developed to bridge this analytical gap. In this study, Nanoparticle Tracking Analysis is evaluated as a potential tool for biologics development. Our results indicate that method performance is molecule-specific and may not work as well under all solution conditions, especially when

Sensitivity of MODIS 2.1 micron Channel for Off-Nadir View Angles for Use in Remote Sensing of Aerosol

Science.gov (United States)

Gatebe, C. K.; King, M. D.; Tsay, S.-C.; Ji, Q.

2000-01-01

Remote sensing of aerosol over land, from MODIS will be based on dark targets using mid-IR channels 2.1 and 3.9 micron. This approach was developed by Kaufman et al (1997), who suggested that dark surface reflectance in the red (0.66 micron -- rho(sub 0.66)) channel is half of that at 2.2 micron (rho(sub 2.2)), and the reflectance in the blue (0.49 micron - rho(sub 0.49)) channel is a quarter of that at 2.2 micron. Using this relationship, the surface reflectance in the visible channels can be predicted within Delta.rho(sub 0.49) approximately Delat.rho(sub 0.66) approximately 0.006 from rho(sub 2.2) for rho(sub 2.2) view angle - the nadir (theta = 0 deg). Considering the importance of the results in remote sensing of aerosols over land surfaces from space, we are validating the relationships for off-nadir view angles using Cloud Absorption Radiometer (CAR) data. The CAR data are available for channels between 0.3 and 2.3 micron and for different surface types and conditions: forest, tundra, ocean, sea-ice, swamp, grassland and over areas covered with smoke. In this study we analyzed data collected during the Smoke, Clouds, and Radiation - Brazil (SCAR-B) experiment to validate Kaufman et al.'s (1997) results for non-nadir view angles. We will show the correlation between rho(sub 0.472), rho(sub 0.675), and rho(sub 2.2) for view angles between nadir (0 deg) and 55 deg off-nadir, and for different viewing directions in the backscatter and forward scatter directions.

Noise-Induced Synchronization among Sub-RF CMOS Analog Oscillators for Skew-Free Clock Distribution

Science.gov (United States)

Utagawa, Akira; Asai, Tetsuya; Hirose, Tetsuya; Amemiya, Yoshihito

We present on-chip oscillator arrays synchronized by random noises, aiming at skew-free clock distribution on synchronous digital systems. Nakao et al. recently reported that independent neural oscillators can be synchronized by applying temporal random impulses to the oscillators [1], [2]. We regard neural oscillators as independent clock sources on LSIs; i. e., clock sources are distributed on LSIs, and they are forced to synchronize through the use of random noises. We designed neuron-based clock generators operating at sub-RF region (CMOS implementation with 0.25-μm CMOS parameters. Through circuit simulations, we demonstrate that i) the clock generators are certainly synchronized by pseudo-random noises and ii) clock generators exhibited phase-locked oscillations even if they had small device mismatches.

Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

CERN Document Server

Ristic, Branislav

2016-09-21

Deep sub micron HV-CMOS processes offer the opportunity for sensors built by industry standard techniques while being HV tolerant, making them good candidates for drift-based, fast collecting, thus radiation-hard pixel detectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHC requirements, active pixel sensors in HV-CMOS technology were investigated. These implement amplifier and discriminator stages directly in insulating deep n-wells, which also act as collecting electrodes. The deep n-wells allow for bias voltages up to 150V leading to a depletion depth of several 10um. Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes have been manufactured, acting as a potential drop-in replacement for the current ATLAS Pixel sensors, thus leaving higher level processing such as trigger handling to dedicated read-out chips. Sensors were thoroughly tested in lab measurements as well as in testbeam experiments. Irradiation with X-rays and protons revealed a tolerance to ionizing doses o...

Dynamic mixed state in micron bridges on the basis of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x whiskers

CERN Document Server

Zybtsev, S G; Pokrovskii, V Yu

2001-01-01

One studied destruction of superconductivity by current in BSCCO (2212) single-crystal whiskers and in bridges based on them with dimensions of the order of the magnetic field penetration efficient depth. One measured the volt-ampere characteristics (VAC) of micron bridges made of Bi sub 2 Sr sub 2 CaCu sub 2 O sub x single-crystal whiskers. It was detected that at temperatures below temperature of superconducting transition in VAC one observed current quasi-periodic abrupt changes of voltage with portions of the constant differential resistance the value of which was proportional to the number of abrupt change. In the narrowest (0.5-1 mu m) bridges one observed up to 10 abrupt changes of voltage. The result is explained by formation of vortex lines under the effect of current

CMOS cassette for digital upgrade of film-based mammography systems

Science.gov (United States)

Baysal, Mehmet A.; Toker, Emre

2006-03-01

While full-field digital mammography (FFDM) technology is gaining clinical acceptance, the overwhelming majority (96%) of the installed base of mammography systems are conventional film-screen (FSM) systems. A high performance, and economical digital cassette based product to conveniently upgrade FSM systems to FFDM would accelerate the adoption of FFDM, and make the clinical and technical advantages of FFDM available to a larger population of women. The planned FFDM cassette is based on our commercial Digital Radiography (DR) cassette for 10 cm x 10 cm field-of-view spot imaging and specimen radiography, utilizing a 150 micron columnar CsI(Tl) scintillator and 48 micron active-pixel CMOS sensor modules. Unlike a Computer Radiography (CR) cassette, which requires an external digitizer, our DR cassette transfers acquired images to a display workstation within approximately 5 seconds of exposure, greatly enhancing patient flow. We will present the physical performance of our prototype system against other FFDM systems in clinical use today, using established objective criteria such as the Modulation Transfer Function (MTF), Detective Quantum Efficiency (DQE), and subjective criteria, such as a contrast-detail (CD-MAM) observer performance study. Driven by the strong demand from the computer industry, CMOS technology is one of the lowest cost, and the most readily accessible technologies available for FFDM today. Recent popular use of CMOS imagers in high-end consumer cameras have also resulted in significant advances in the imaging performance of CMOS sensors against rivaling CCD sensors. This study promises to take advantage of these unique features to develop the first CMOS based FFDM upgrade cassette.

Monolithic silicon photonics in a sub-100nm SOI CMOS microprocessor foundry: progress from devices to systems

Science.gov (United States)

Popović, Miloš A.; Wade, Mark T.; Orcutt, Jason S.; Shainline, Jeffrey M.; Sun, Chen; Georgas, Michael; Moss, Benjamin; Kumar, Rajesh; Alloatti, Luca; Pavanello, Fabio; Chen, Yu-Hsin; Nammari, Kareem; Notaros, Jelena; Atabaki, Amir; Leu, Jonathan; Stojanović, Vladimir; Ram, Rajeev J.

2015-02-01

We review recent progress of an effort led by the Stojanović (UC Berkeley), Ram (MIT) and Popović (CU Boulder) research groups to enable the design of photonic devices, and complete on-chip electro-optic systems and interfaces, directly in standard microelectronics CMOS processes in a microprocessor foundry, with no in-foundry process modifications. This approach allows tight and large-scale monolithic integration of silicon photonics with state-of-the-art (sub-100nm-node) microelectronics, here a 45nm SOI CMOS process. It enables natural scale-up to manufacturing, and rapid advances in device design due to process repeatability. The initial driver application was addressing the processor-to-memory communication energy bottleneck. Device results include 5Gbps modulators based on an interleaved junction that take advantage of the high resolution of the sub-100nm CMOS process. We demonstrate operation at 5fJ/bit with 1.5dB insertion loss and 8dB extinction ratio. We also demonstrate the first infrared detectors in a zero-change CMOS process, using absorption in transistor source/drain SiGe stressors. Subsystems described include the first monolithically integrated electronic-photonic transmitter on chip (modulator+driver) with 20-70fJ/bit wall plug energy/bit (2-3.5Gbps), to our knowledge the lowest transmitter energy demonstrated to date. We also demonstrate native-process infrared receivers at 220fJ/bit (5Gbps). These are encouraging signs for the prospects of monolithic electronics-photonics integration. Beyond processor-to-memory interconnects, our approach to photonics as a "More-than- Moore" technology inside advanced CMOS promises to enable VLSI electronic-photonic chip platforms tailored to a vast array of emerging applications, from optical and acoustic sensing, high-speed signal processing, RF and optical metrology and clocks, through to analog computation and quantum technology.

CMOS serial link for fully duplexed data communication

Science.gov (United States)

Lee, Kyeongho; Kim, Sungjoon; Ahn, Gijung; Jeong, Deog-Kyoon

1995-04-01

This paper describes a CMOS serial link allowing fully duplexed 500 Mbaud serial data communication. The CMOS serial link is a robust and low-cost solution to high data rate requirements. A central charge pump PLL for generating multiphase clocks for oversampling is shared by several serial link channels. Fully duplexed serial data communication is realized in the bidirectional bridge by separating incoming data from the mixed signal on the cable end. The digital PLL accomplishes process-independent data recovery by using a low-ratio oversampling, a majority voting, and a parallel data recovery scheme. Mostly, digital approach could extend its bandwidth further with scaled CMOS technology. A single channel serial link and a charge pump PLL are integrated in a test chip using 1.2 micron CMOS process technology. The test chip confirms upto 500 Mbaud unidirectional mode operation and 320 Mbaud fully duplexed mode operation with pseudo random data patterns.

Short range investigation of sub-micron zirconia particles

Energy Technology Data Exchange (ETDEWEB)

Caracoche, M C; Martinez, J A [Departamento de Fisica, IFLP, Facultad de Ciencias Exactas, CICPBA, Universidad Nacional de La Plata (Argentina); Rivas, P C [IFLP-CONICET, Facultad de Ciencias Agrarias y Forestales, Universidad Nacional de La Plata (Argentina); Bondioli, F; Cannillo, V [Dipartimento di Ingegniria dei Materiali e dell' Ambiente, Facolta di Ingegneria, Universita di Modena e Reggio Emilia (Italy); Ferrari, A M, E-mail: cristina@fisica.unlp.edu.a [Dipartimento di Scienza a Metodi dell' Ingegneria, Universita di Modena e Reggio Emilia (Italy)

2009-05-01

The Perturbed Angular Correlations technique was used to determine the configurations around Zirconium ions and their thermal behavior in non-aggregated sub-micron zirconia spherical particles. Three residues containing- Zr surroundings were determined for the non-crystalline starting particles, which were identified under the assumption of a certain chemical reactions sequence during synthesis. While the one made up mainly by hydroxyl groups was common to both samples, the two involving mainly organic residues were particle size dependent. Upon crystallization, both samples stabilized in the t'- and t- tetragonal forms and the Xc-cubic form but their amounts and temperatures of appearance were different. On heating, the structure of the smaller particles became gradually monoclinic achieving total degradation upon the subsequent cooling to RT.

Sub-half-wavelength atom localization via two standing-wave fields

International Nuclear Information System (INIS)

Jin Luling; Sun Hui; Niu Yueping; Gong Shangqing

2008-01-01

We propose a scheme for sub-half-wavelength atom localization in a four-level ladder-type atomic system, which is coupled by two classical standing-wave fields. We find that one of the standing-wave fields can help in enhancing the localization precision, and the other is of crucial importance in increasing the detecting probability and leading sub-half-wavelength localization

Half metallic ferromagnetism in tri-layered perovskites Sr{sub 4}T{sub 3}O{sub 10}(T = Co, Rh)

Energy Technology Data Exchange (ETDEWEB)

Ghimire, Madhav Prasad, E-mail: ghimire.mpg@gmail.com [Faculty of Science, Nepal Academy of Science and Technology, P. O. Box 3323, Khumaltar, Lalitpur (Nepal); International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba 305-0044 (Japan); Thapa, R. K.; Sandeep [Department of Physics, Mizoram University, Aizawl 796-004 (India); Rai, D. P. [Department of Physics, Pachhunga University College, Aizawl 796-001 (India); Sinha, T. P. [Department of Physics, Bose Institute, Kolkata 700-009 (India); Hu, Xiao [International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Tsukuba 305-0044 (Japan)

2015-02-14

First-principles density functional theory (DFT) is used to investigate the electronic and magnetic properties of Sr{sub 4}Rh{sub 3}O{sub 10}, a member of the Ruddlesden-Popper series. Based on the DFT calculations taking into account the co-operative effect of Coulomb interaction (U) and spin-orbit couplings (SOC), Sr{sub 4}Rh{sub 3}O{sub 10} is found to be a half metallic ferromagnet (HMF) with total magnetic moment μ{sub tot} = 12 μ{sub B} per unit cell. The material has almost 100% spin-polarization at the Fermi level despite of sizable SOC. Replacement of Rh atom by the isovalent Co atom is considered. Upon full-replacement of Co, a low-spin to intermediate spin transition happens resulting in a HMF state with the total magnetic moment three-time larger (i.e., μ{sub tot} = 36 μ{sub B} per unit cell), compared to Sr{sub 4}Rh{sub 3}O{sub 10}. We propose Sr{sub 4}Rh{sub 3}O{sub 10} and Sr{sub 4}Co{sub 3}O{sub 10} as candidates of half metals.

SiO2/ZnO Composite Hollow Sub-Micron Fibers: Fabrication from Facile Single Capillary Electrospinning and Their Photoluminescence Properties

Directory of Open Access Journals (Sweden)

Guanying Song

2017-02-01

Full Text Available In this work, SiO2/ZnO composite hollow sub-micron fibers were fabricated by a facile single capillary electrospinning technique followed by calcination, using tetraethyl orthosilicate (TEOS, polyvinylpyrrolidone (PVP and ZnO nanoparticles as raw materials. The characterization results of the scanning electron microscopy (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FT-IR spectra indicated that the asprepared composite hollow fibers consisted of amorphous SiO2 and hexagonal wurtzite ZnO. The products revealed uniform tubular structure with outer diameters of 400–500 nm and wall thickness of 50–60 nm. The gases generated and the directional escaped mechanism was proposed to illustrate the formation of SiO2/ZnO composite hollow sub-micron fibers. Furthermore, a broad blue emission band was observed in the photoluminescence (PL of SiO2/ZnO composite hollow sub-micron fibers, exhibiting great potential applications as blue light-emitting candidate materials.

Sub-micron silicon nitride waveguide fabrication using conventional optical lithography.

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Kamyab, Lobna; Rostami, Ali; Capolino, Filippo; Boyraz, Ozdal

2015-03-09

We demonstrate a novel technique to fabricate sub-micron silicon nitride waveguides using conventional contact lithography with MEMS-grade photomasks. Potassium hydroxide anisotropic etching of silicon facilitates line reduction and roughness smoothing and is key to the technique. The fabricated waveguides is measured to have a propagation loss of 0.8dB/cm and nonlinear coefficient of γ = 0.3/W/m. A low anomalous dispersion of <100ps/nm/km is also predicted. This type of waveguide is highly suitable for nonlinear optics. The channels naturally formed on top of the waveguide also make it promising for plasmonics and quantum efficiency enhancement in sensing applications.

Characterization of various Si-photodiode junction combinations and layout specialities in 0.18µm CMOS and HV-CMOS technologies

Science.gov (United States)

Jonak-Auer, I.; Synooka, O.; Kraxner, A.; Roger, F.

2017-12-01

With the ongoing miniaturization of CMOS technologies the need for integrated optical sensors on smaller scale CMOS nodes arises. In this paper we report on the development and implementation of different optical sensor concepts in high performance 0.18µm CMOS and high voltage (HV) CMOS technologies on three different substrate materials. The integration process is such that complete modularity of the CMOS processes remains untouched and no additional masks or ion implantation steps are necessary for the sensor integration. The investigated processes support 1.8V and 3V standard CMOS functionality as well as HV transistors capable of operating voltages of 20V and 50V. These processes intrinsically offer a wide variety of junction combinations, which can be exploited for optical sensing purposes. The availability of junction depths from submicron to several microns enables the selection of spectral range from blue to infrared wavelengths. By appropriate layout the contributions of photo-generated carriers outside the target spectral range can be kept to a minimum. Furthermore by making use of other features intrinsically available in 0.18µm CMOS and HV-CMOS processes dark current rates of optoelectronic devices can be minimized. We present TCAD simulations as well as spectral responsivity, dark current and capacitance data measured for various photodiode layouts and the influence of different EPI and Bulk substrate materials thereon. We show examples of spectral responsivity of junction combinations optimized for peak sensitivity in the ranges of 400-500nm, 550-650nm and 700-900nm. Appropriate junction combination enables good spectral resolution for colour sensing applications even without any additional filter implementation. We also show that by appropriate use of shallow trenches dark current values of photodiodes can further be reduced.

Continuously tunable sub-half-wavelength localization via coherent control of spontaneous emission

International Nuclear Information System (INIS)

Wang Fei; Tan Xin-Yu; Gong Cheng; Shi Wen-Xing

2012-01-01

We propose a continuously tunable method of sub-half-wavelength localization via the coherent control of the spontaneous emission of a four-level Y-type atomic system, which is coupled to three strong coupling fields including a standing-wave field together with a weak probe field. It is shown that the sub-half-wavelength atomic localization is realized for both resonance and off-resonance cases. Furthermore, by varying the probe detuning in succession, the positions of the two localization peaks are tuned continuously within a wide range of probe field frequencies, which provides convenience for the realization of sub-half-wavelength atomic localization experimentally

Half metallicity in bare BC{sub 2}N nanoribbons with zigzag edges

Energy Technology Data Exchange (ETDEWEB)

Li, Hong, E-mail: lihong@ncut.edu.cn [College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144 (China); Xiao, Xiang; Tie, Jun [College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144 (China); Lu, Jing [State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871 (China)

2017-06-09

We study the electronic and magnetic properties of bare zigzag BC{sub 2}N nanoribbons (ZBC{sub 2}NNRs) by using first principles calculations. The ZBC{sub 2}NNRs which we studied are assigned to four edge types, and we carefully examine the size effect and edge magnetic coupling orders. We find that the N edge and the C edge adjacent to N atoms have a ferromagnetic coupling, while the B edge and the C edge adjacent to B atoms have an anti-ferromagnetic coupling. These novel properties arise from the unsaturated edge with specific edge determined magnetic moment distribution. All the investigated ribbons exhibit magnetic ground states with room-temperature accessible half-metallic character, irrespective of the ribbon width. Our results suggest that ZBC{sub 2}NNRs can have potential applications in spintronics. - Highlights: • DFT study on bare zigzag BC{sub 2}N nanoribbons (ZBC{sub 2}NNRs). • All the studied bare ZBC{sub 2}NNRs are half-metals at room temperature. • The half-metal characters come from specific spin couplings on the edge atoms. • We predict bare ZBC{sub 2}NNRs as practical candidate for spintronics.

Modelling of passive heating for replication of sub-micron patterns in optical disk substrates

Energy Technology Data Exchange (ETDEWEB)

Kim, Youngmin; Bae, Jaecheol; Kim, Hongmin; Kang, Shinill [School of Mechanical Engineering, Yonsei University, 134 Shinchon-dong, Seodaemoon-ku, Seoul (Korea, Republic of)

2004-05-07

The transcribability of pit or land groove structures in replicating an optical disk substrate greatly affects the performance of a high-density optical disk. However, a solidified layer generated during the polymer filling worsens transcribability because the solidified layer prevents the polymer melt from filling the sub-micron patterns. Therefore, the development of the solidified layer during the filling stage of injection moulding must be delayed. For this delay, passive heating through an insulation layer has been used. In the present study, to examine the development of the solidified layer, delayed by passive heating, the flow of the polymer melt with passive heating was analysed. Passive heating delayed markedly the development of the solidified layer, reduced the viscosity of the polymer melt, and increased the fluidity of the polymer melt in the vicinity of the stamper surface with the sub-micron patterns. As a result, we predict that passive heating can improve the transcribability of an optical disk substrate. To verify our prediction, we fabricated an optical disk substrate by using passive heating of a mould and measured the transcribability of an optical disk substrate.

Modelling of passive heating for replication of sub-micron patterns in optical disk substrates

International Nuclear Information System (INIS)

Kim, Youngmin; Bae, Jaecheol; Kim, Hongmin; Kang, Shinill

2004-01-01

The transcribability of pit or land groove structures in replicating an optical disk substrate greatly affects the performance of a high-density optical disk. However, a solidified layer generated during the polymer filling worsens transcribability because the solidified layer prevents the polymer melt from filling the sub-micron patterns. Therefore, the development of the solidified layer during the filling stage of injection moulding must be delayed. For this delay, passive heating through an insulation layer has been used. In the present study, to examine the development of the solidified layer, delayed by passive heating, the flow of the polymer melt with passive heating was analysed. Passive heating delayed markedly the development of the solidified layer, reduced the viscosity of the polymer melt, and increased the fluidity of the polymer melt in the vicinity of the stamper surface with the sub-micron patterns. As a result, we predict that passive heating can improve the transcribability of an optical disk substrate. To verify our prediction, we fabricated an optical disk substrate by using passive heating of a mould and measured the transcribability of an optical disk substrate

Synthesis and characterization of hollow α-Fe2O3 sub-micron spheres prepared by sol–gel

International Nuclear Information System (INIS)

León, Lizbet; Bustamante, Angel; Osorio, Ana; Olarte, G. S.; Santos Valladares, Luis De Los; Barnes, Crispin H. W.; Majima, Yutaka

2011-01-01

In this work we report the preparation of magnetic hematite hollow sub-micron spheres (α-Fe 2 O 3 ) by colloidal suspensions of ferric nitrate nine-hydrate (Fe(NO 3 ) 3 ·9H 2 O) particles in citric acid solution by following the sol–gel method. After the gel formation, the samples were annealed at different temperatures in an oxidizing atmosphere. Annealing at 180°C resulted in an amorphous phase, without iron oxide formation. Annealing at 250°C resulted in coexisting phases of hematite, maghemite and magnetite, whereas at 400°C, only hematite and maghemite were found. Pure hematite hollow sub-micron spheres with porous shells were formed after annealing at 600°C. The characterization was performed by X-ray diffraction (XRD), Mössbauer spectroscopy (MS) and scanning electron microscopy (SEM).

Native and induced triplet nitrogen-vacancy centers in nano- and micro-diamonds: Half-field electron paramagnetic resonance fingerprint

Energy Technology Data Exchange (ETDEWEB)

Shames, A. I., E-mail: sham@bgu.ac.il [Department of Physics, Ben-Gurion University of the Negev, Be' er-Sheva 84105 (Israel); Osipov, V. Yu.; Vul’, A. Ya. [Ioffe Physical-Technical Institute, Polytechnicheskaya 26, 194021 St. Petersburg (Russian Federation); Bardeleben, H.-J. von [Institut des Nano Sciences de Paris-INSP, Université Pierre et Marie Curie/UMR 7588 au CNRS, 7500 Paris (France); Boudou, J.-P.; Treussart, F. [Laboratoire Aimé Cotton, CNRS, Université Paris-Sud and ENS Cachan, 91405 Orsay (France)

2014-02-10

Multiple frequency electron paramagnetic resonance (EPR) study of small (4–25 nm) nanodiamonds obtained by various dynamic synthesis techniques reveals systematic presence in the half-field (HF) region a distinctive doublet fingerprint consisting of resolved g{sub HF1} = 4.26 and g{sub HF2} = 4.00 signals. This feature is attributed to “forbidden” ΔM{sub S} = 2 transitions in EPR spectra of two native paramagnetic centers of triplet (S = 1) origin designated as TR1 and TR2, characterized by zero field splitting values D{sub 1} = 0.0950 ± 0.002 cm{sup −1} and D{sub 2} = 0.030 ± 0.005 cm{sup −1}. Nanodiamonds of ∼50 nm particle size, obtained by crushing of Ib type nitrogen rich synthetic diamonds, show only HF TR2 signal whereas the same sample undergone high energy (20 MeV) electron irradiation and thermal annealing demonstrates rise of HF TR1 signal. The same HF TR1 signals appear in the process of fabrication of fluorescent nanodiamonds from micron-size synthetic diamond precursors. Results obtained allow unambiguous attribution of the half-field TR1 EPR signals with g{sub HF1} = 4.26, observed in nano- and micron-diamond powders, to triplet negatively charged nitrogen-vacancy centers. These signals are proposed as reliable and convenient fingerprints in both qualitative and quantitative study of fluorescent nano- and micron-diamonds.

A 10-bit 100 MSamples/s BiCMOS D/A Converter

DEFF Research Database (Denmark)

Jørgensen, Ivan Herald Holger; Tunheim, Svein Anders

1997-01-01

This paper presents a 10-bit Digital-to-Analogue Converter (DAC) based on the current steering principle. The DAC is processed in a 0.8 micron BiCMOS process and is designed to operate at a sampling rate of 100MSamples/s. The DAC is intended for applications using direct digital synthesis...

X-ray imaging with sub-micron resolution using large-area photon counting detectors Timepix

Science.gov (United States)

Dudak, J.; Karch, J.; Holcova, K.; Zemlicka, J.

2017-12-01

As X-ray micro-CT became a popular tool for scientific purposes a number of commercially available CT systems have emerged on the market. Micro-CT systems have, therefore, become widely accessible and the number of research laboratories using them constantly increases. However, even when CT scans with spatial resolution of several micrometers can be performed routinely, data acquisition with sub-micron precision remains a complicated task. Issues come mostly from prolongation of the scan time inevitably connected with the use of nano-focus X-ray sources. Long exposure time increases the noise level in the CT projections. Furthermore, considering the sub-micron resolution even effects like source-spot drift, rotation stage wobble or thermal expansion become significant and can negatively affect the data. The use of dark-current free photon counting detectors as X-ray cameras for such applications can limit the issue of increased image noise in the data, however the mechanical stability of the whole system still remains a problem and has to be considered. In this work we evaluate the performance of a micro-CT system equipped with nano-focus X-ray tube and a large area photon counting detector Timepix for scans with effective pixel size bellow one micrometer.

Variation-aware advanced CMOS devices and SRAM

CERN Document Server

Shin, Changhwan

2016-01-01

This book provides a comprehensive overview of contemporary issues in complementary metal-oxide semiconductor (CMOS) device design, describing how to overcome process-induced random variations such as line-edge-roughness, random-dopant-fluctuation, and work-function variation, and the applications of novel CMOS devices to cache memory (or Static Random Access Memory, SRAM). The author places emphasis on the physical understanding of process-induced random variation as well as the introduction of novel CMOS device structures and their application to SRAM. The book outlines the technical predicament facing state-of-the-art CMOS technology development, due to the effect of ever-increasing process-induced random/intrinsic variation in transistor performance at the sub-30-nm technology nodes. Therefore, the physical understanding of process-induced random/intrinsic variations and the technical solutions to address these issues plays a key role in new CMOS technology development. This book aims to provide the reade...

Radiation Tolerant Design with 0.18-micron CMOS Technology

CERN Document Server

Chen, Li; Durdle , Nelson G.

This thesis discusse s th e issues r elated to the us e of enclosed-gate layou t trans isto rs and guard rings in a 0.18 μ m CMOS technology in order to im prove the radiation tolerance of ASICs. The thin gate oxides of subm icron technologies ar e inherently m ore radiation tole rant tha n the thick er oxides present in less advanced technologies. Using a commercial deep subm icron technology to bu ild up radiation-ha rdened circuits introduces several advantages com pared to a dedicated radiation-ha rd technology, such as speed, power, area, stability, and expense. Som e novel aspects related to the use of encl osed-gate layout transist ors are presented in this th esis. A m odel to calculate the aspect ratio is introduced and verified. Some im portant electrica l par ameters of the tran sistors such as threshold voltage, leakage current, subthreshold slope, and transconducta nce are studied before and afte...

Fabrication of sub-micron whole waffer SIS tunnel junctions for millimeter wave mixers

International Nuclear Information System (INIS)

Huq, S.E.; Blamire, M.G.; Evetts, J.E.; Hasko, D.G.; Ahmed, H.

1991-01-01

As a part of a programme for the development of a space-qualified sub-mm-wave mixer operating in the region of one terahertz we have been developing the processes required for the fabrication of submicron whole wafer tunnel junctions. Using the self-aligned whole-wafer process (SAWW) with electron beam lithography we have been able to reliably fabricate high quality (V m > 20 mV) submicron tunnel junctions from whole wafer Nb/AlO x /Nb structures. In particular we show that the junction quality is independent of size down to 0.3 μm 2 junction area. The problems of film stress, anodization, registration for electron beam lithography and lift-off, which limit the yield of good quality sub-micron scale junctions are addressed in this paper

Large area sub-micron chemical imaging of magnesium in sea urchin teeth.

Science.gov (United States)

Masic, Admir; Weaver, James C

2015-03-01

The heterogeneous and site-specific incorporation of inorganic ions can profoundly influence the local mechanical properties of damage tolerant biological composites. Using the sea urchin tooth as a research model, we describe a multi-technique approach to spatially map the distribution of magnesium in this complex multiphase system. Through the combined use of 16-bit backscattered scanning electron microscopy, multi-channel energy dispersive spectroscopy elemental mapping, and diffraction-limited confocal Raman spectroscopy, we demonstrate a new set of high throughput, multi-spectral, high resolution methods for the large scale characterization of mineralized biological materials. In addition, instrument hardware and data collection protocols can be modified such that several of these measurements can be performed on irregularly shaped samples with complex surface geometries and without the need for extensive sample preparation. Using these approaches, in conjunction with whole animal micro-computed tomography studies, we have been able to spatially resolve micron and sub-micron structural features across macroscopic length scales on entire urchin tooth cross-sections and correlate these complex morphological features with local variability in elemental composition. Copyright © 2015 Elsevier Inc. All rights reserved.

Photon detection with CMOS sensors for fast imaging

International Nuclear Information System (INIS)

Baudot, J.; Dulinski, W.; Winter, M.; Barbier, R.; Chabanat, E.; Depasse, P.; Estre, N.

2009-01-01

Pixel detectors employed in high energy physics aim to detect single minimum ionizing particle with micrometric positioning resolution. Monolithic CMOS sensors succeed in this task thanks to a low equivalent noise charge per pixel of around 10 to 15 e - , and a pixel pitch varying from 10 to a few 10 s of microns. Additionally, due to the possibility for integration of some data treatment in the sensor itself, readout times of 100μs have been reached for 100 kilo-pixels sensors. These aspects of CMOS sensors are attractive for applications in photon imaging. For X-rays of a few keV, the efficiency is limited to a few % due to the thin sensitive volume. For visible photons, the back-thinned version of CMOS sensor is sensitive to low intensity sources, of a few hundred photons. When a back-thinned CMOS sensor is combined with a photo-cathode, a new hybrid detector results (EBCMOS) and operates as a fast single photon imager. The first EBCMOS was produced in 2007 and demonstrated single photon counting with low dark current capability in laboratory conditions. It has been compared, in two different biological laboratories, with existing CCD-based 2D cameras for fluorescence microscopy. The current EBCMOS sensitivity and frame rate is comparable to existing EMCCDs. On-going developments aim at increasing this frame rate by, at least, an order of magnitude. We report in conclusion, the first test of a new CMOS sensor, LUCY, which reaches 1000 frames per second.

Technology CAD for germanium CMOS circuit

Energy Technology Data Exchange (ETDEWEB)

Saha, A.R. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)]. E-mail: ars.iitkgp@gmail.com; Maiti, C.K. [Department of Electronics and ECE, IIT Kharagpur, Kharagpur-721302 (India)

2006-12-15

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f {sub T} of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted.

Immobilization of trypsin on sub-micron skeletal polymer monolith

Energy Technology Data Exchange (ETDEWEB)

Yao Chunhe [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Qi Li, E-mail: qili@iccas.ac.cn [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Hu Wenbin [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Graduate School, Chinese Academy of Sciences, Beijing 100049 (China); Wang Fuyi [Beijing National Laboratory for Molecular Sciences, Key Laboratory of Analytical Chemistry for Living Biosystems, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 (China); Yang Gengliang [College of Pharmacy, Hebei University, Baoding 071002 (China)

2011-04-29

A new kind of immobilized trypsin reactor based on sub-micron skeletal polymer monolith has been developed. Covalent immobilization of trypsin on this support was performed using the epoxide functional groups in either a one- or a multi-step reaction. The proteolytic activity of the immobilized trypsin was measured by monitoring the formation of N-{alpha}-benzoyl-L-arginine (BA) which is the digestion product of a substrate N-{alpha}-benzoyl-L-arginine ethyl ester (BAEE). Results showed that the digestion speed was about 300 times faster than that performed in free solution. The performance of such an enzyme reactor was further demonstrated by digesting protein myoglobin. It has been found that the protein digestion could be achieved in 88 s at 30 deg. C, which is comparable to 24 h digestion in solution at 37 {sup o}C. Furthermore, the immobilized trypsin exhibits increased stability even after continuous use compared to that in free solution. The present monolithic enzyme-reactor provides a promising platform for the proteomic research.

Design consideration for dc SQUIDs fabricated in deep sub-micron technology

International Nuclear Information System (INIS)

Ketchen, M.B.

1991-01-01

Design rules for scaling dc SQUID junctions to optimize SQUID performance have been well known for over a decade, and verified down to the sub-micron regime. Practical SQUIDs having well coupled input coils of usable inductance have generally been fabricated at the 2-5 μm level of lithography. Other technologies, silicon in particular, are now routinely practiced at the 0.5 μm level of lithography with impressive demonstrations at the 0.1-0.25 μm level not uncommon. In this paper the implications of applying such fabrication capability to advance dc SQUID technology are explored. In particular the issues of scaling practical dc SQUIDs down to the 0.1-0.25 μm regime are examined, using as a prototype design the basic washer SQUID with a spiral input coil

A large dynamic range radiation tolerant analog memory in a quarter micron CMOS technology

CERN Document Server

Anelli, G; Rivetti, A

2000-01-01

A 8*128 cell analog memory prototype has been designed in a commercial 0.25 jam CMOS process. The aim of this work was to investigate the possibility of designing large dynamic range mixed- mode switched capacitor circuits for High-Energy Physics (HEP) applications in deep submicron CMOS technologies. Special layout techniques have been used to make the circuit radiation tolerant left bracket 1 right bracket . The memory cells employ gate-oxide capacitors for storage, allowing for a very high density. A voltage write - voltage read architecture has been chosen to minimize the sensitivity to absolute capacitor values. The measured input voltage range is 2.3 V (V//D//D = 2.5 V), with a linearity of at least 7.5 bits over 2 V. The dynamic range is more than 11 bits. The pedestal variation is plus or minus 0.5 mV peak-to-peak. The noise measured, which is dominated by the noise of the measurement setup, is around 0.8 mV rms. The characteristics of the memory have been measured before irradiation and after lOMrd (...

Study of half-metallic ferromagnetism and elastic properties of Cd{sub 1-x}Cr{sub x}Z (Z=S, Se)

Energy Technology Data Exchange (ETDEWEB)

Rani, Anita [Guru Nanak College for Girls, Sri Muktsar Sahib, Punjab (India); Kumar, Ranjan [Panjab University Chandigarh, Department of Physics, Chandigarh (India)

2016-12-15

We have studied the structural, electronic and magnetic properties of Cd{sub 1-x}Cr{sub x}S and Cd{sub 1-x}Cr{sub x}Se diluted magnetic semiconductors in zinc blende (B3) phase at x = 0.25, 0.125 and 0.0625. The calculations have been performed using DFT (density functional theory) as implemented in SIESTA code using LDA (local density approximation) as exchange-correlation (XC) potential. Study of band structures and DOS (density of states) shows HMF (half-metallic ferromagnetic) nature of Cd{sub 1-x}Cr{sub x}S and Cd{sub 1-x}Cr{sub x}Se alloys. The calculated values of s-d exchange constant Nα and p-d exchange constant Nβ show the magnetic behavior of these compounds. Moreover, both DMSs retain their half-metallic nature at 0.25, 0.125 and 0.0625 concentrations with 100% spin polarization at Fermi level (E{sub F}). Total magnetic moment of these compounds is due to 3d states of Cr atom and also existence of small induced magnetic moment on other non-magnetic atoms as well. HM robustness is also calculated as a function of lattice constants. (orig.)

EXPLORING THE ROLE OF SUB-MICRON-SIZED DUST GRAINS IN THE ATMOSPHERES OF RED L0–L6 DWARFS

Energy Technology Data Exchange (ETDEWEB)

Hiranaka, Kay; Cruz, Kelle L.; Baldassare, Vivienne F. [Hunter College, Department of Physics and Astronomy, City University of New York, 695 Park Ave, New York, NY 10065 (United States); Douglas, Stephanie T. [American Museum of Natural History, Department of Astrophysics, Central Park West at 79th Street, New York, NY 10024 (United States); Marley, Mark S., E-mail: khiranak@hunter.cuny.edu [NASA Ames Research Center, MS-245-3, Moffett Field, CA 94035 (United States)

2016-10-20

We examine the hypothesis that the red near-infrared colors of some L dwarfs could be explained by a “dust haze” of small particles in their upper atmospheres. This dust haze would exist in conjunction with the clouds found in dwarfs with more typical colors. We developed a model that uses Mie theory and the Hansen particle size distributions to reproduce the extinction due to the proposed dust haze. We apply our method to 23 young L dwarfs and 23 red field L dwarfs. We constrain the properties of the dust haze including particle size distribution and column density using Markov Chain Monte Carlo methods. We find that sub-micron-range silicate grains reproduce the observed reddening. Current brown dwarf atmosphere models include large-grain (1–100 μ m) dust clouds but not sub-micron dust grains. Our results provide a strong proof of concept and motivate a combination of large and small dust grains in brown dwarf atmosphere models.

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

Science.gov (United States)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

A CMOS delay locked loop and sub-nanosecond time-to-digital converter chip

International Nuclear Information System (INIS)

Santos, D.M.; Dow, S.F.; Flasck, J.M.; Levi, M.E.

1996-01-01

Phase-locked loops have been employed in the past to obtain sub-nanosecond time resolution in high energy physics and nuclear science applications. An alternative solution based on a delay-locked loop (DLL) is described. This solution allows for a very high level of integration yet still offers resolution in the sub-nanosecond regime. Two variations on this solution are outlined. A novel phase detector, based on the Mueller C-element, is used to implement a charge pump where the injected charge approaches zero as the loop approaches lock on the leading edge of an input clock reference. This greatly reduces timing jitter. In the second variation the loop locks to both the leading and trailing clock edges. In this second implementation, software coded layout generators are used to automatically layout a highly integrated, multichannel, time-to-digital converter (TDC) targeted for one specific frequency. The two circuits, DLL and TDC, are implemented in CMOS 1.2 microm and 0.8 microm technologies, respectively. Test results show a timing jitter of less than 30 ps for the DLL circuit and less than 190 ps integral and differential nonlinearity for the TDC circuit

CMOS single-stage input-powered bridge rectifier with boost switch and duty cycle control

Science.gov (United States)

Radzuan, Roskhatijah; Mohd Salleh, Mohd Khairul; Hamzah, Mustafar Kamal; Ab Wahab, Norfishah

2017-06-01

This paper presents a single-stage input-powered bridge rectifier with boost switch for wireless-powered devices such as biomedical implants and wireless sensor nodes. Realised using CMOS process technology, it employs a duty cycle switch control to achieve high output voltage using boost technique, leading to a high output power conversion. It has only six external connections with the boost inductance. The input frequency of the bridge rectifier is set at 50 Hz, while the switching frequency is 100 kHz. The proposed circuit is fabricated on a single 0.18-micron CMOS die with a space area of 0.024 mm2. The simulated and measured results show good agreement.

Développement de circuits logiques programmables résistants aux alas logiques en technologie CMOS submicrométrique

CERN Document Server

Bonacini, Sandro; Kloukinas, Kostas

2007-01-01

The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Most of the microelectronics components developed for the first generation of LHC experiments have been designed with very precise experiment-specific goals and are hardly adaptable to other applications. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust programmable components for application in High Energy Physics (HEP) experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 micron CMOS technology. The FPGA under development is instead a 32x32 logic block array, equivalent to ~25k gates, in 0.13 micron CMOS. This wor...

A high-speed low-noise transimpedance amplifier in a 0.25 {mu}m CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Anelli, Giovanni E-mail: giovanni.anelli@cern.ch; Borer, Kurt; Casagrande, Luca; Despeisse, Matthieu; Jarron, Pierre; Pelloux, Nicolas; Saramad, Shahyar

2003-10-11

We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. The main feature of this design is the use of a transistor in the feedback path instead of a resistor. The circuit has been optimized for reading signals coming from silicon strip detectors with few pF input capacitance. For an input charge of 4 fC, an input capacitance of 4 pF and a transresistance of 135 k{omega}, we have measured an output pulse fall time of 3 ns and an Equivalent Noise Charge (ENC) of around 350 electrons rms. In view of the operation of the chip at cryogenic temperatures, measurements at 130 K have also been carried out, showing an overall improvement in the performance of the chip. Fall times down to 1.5 ns have been measured. An integrated circuit containing 32 channels has been designed and wire bonded to a silicon strip detector and successfully used for the construction of a high-intensity proton beam hodoscope for the NA60 experiment. The chip has been laid out using special techniques to improve its radiation tolerance, and it has been irradiated up to 10 Mrd (SiO{sub 2}) without any degradation in the performance.

CMOS circuits manual

CERN Document Server

Marston, R M

1995-01-01

CMOS Circuits Manual is a user's guide for CMOS. The book emphasizes the practical aspects of CMOS and provides circuits, tables, and graphs to further relate the fundamentals with the applications. The text first discusses the basic principles and characteristics of the CMOS devices. The succeeding chapters detail the types of CMOS IC, including simple inverter, gate and logic ICs and circuits, and complex counters and decoders. The last chapter presents a miscellaneous collection of two dozen useful CMOS circuits. The book will be useful to researchers and professionals who employ CMOS circu

Sub-micron resolution selected area electron channeling patterns.

Science.gov (United States)

Guyon, J; Mansour, H; Gey, N; Crimp, M A; Chalal, S; Maloufi, N

2015-02-01

Collection of selected area channeling patterns (SACPs) on a high resolution FEG-SEM is essential to carry out quantitative electron channeling contrast imaging (ECCI) studies, as it facilitates accurate determination of the crystal plane normal with respect to the incident beam direction and thus allows control the electron channeling conditions. Unfortunately commercial SACP modes developed in the past were limited in spatial resolution and are often no longer offered. In this contribution we present a novel approach for collecting high resolution SACPs (HR-SACPs) developed on a Gemini column. This HR-SACP technique combines the first demonstrated sub-micron spatial resolution with high angular accuracy of about 0.1°, at a convenient working distance of 10mm. This innovative approach integrates the use of aperture alignment coils to rock the beam with a digitally calibrated beam shift procedure to ensure the rocking beam is maintained on a point of interest. Moreover a new methodology to accurately measure SACP spatial resolution is proposed. While column considerations limit the rocking angle to 4°, this range is adequate to index the HR-SACP in conjunction with the pattern simulated from the approximate orientation deduced by EBSD. This new technique facilitates Accurate ECCI (A-ECCI) studies from very fine grained and/or highly strained materials. It offers also new insights for developing HR-SACP modes on new generation high-resolution electron columns. Copyright © 2014 Elsevier B.V. All rights reserved.

Water ice and sub-micron ice particles on Tethys and Mimas

Science.gov (United States)

Scipioni, Francesca; Nordheim, Tom; Clark, Roger Nelson; D'Aversa, Emiliano; Cruikshank, Dale P.; Tosi, Federico; Schenk, Paul M.; Combe, Jean-Philippe; Dalle Ore, Cristina M.

2017-10-01

IntroductionWe present our ongoing work, mapping the variation of the main water ice absorption bands, and the distribution of the sub-micron particles, across Mimas and Tethys’ surfaces using Cassini-VIMS cubes acquired in the IR range (0.8-5.1 μm). We present our results in the form of maps of variation of selected spectral indicators (depth of absorption bands, reflectance peak height, spectral slopes).Data analysisVIMS acquires hyperspectral data in the 0.3-5.1 μm spectral range. We selected VIMS cubes of Tethys and Mimas in the IR range (0.8-5.1 μm). For all pixels in the selected cubes, we measured the band depths for water-ice absorptions at 1.25, 1.5 and 2.02 μm and the height of the 3.6 μm reflection peak. Moreover, we considered the spectral indictors for particles smaller than 1 µm [1]: (i) the 2 µm absorption band is asymmetric and (ii) it has the minimum shifted to longer λ (iii) the band depth ratio 1.5/2.0 µm decreases; (iv) the reflection peak at 2.6 µm decreases; (v) the Fresnel reflection peak is suppressed; (vi) the 5 µm reflectance is decreased relative to the 3.6 µm peak. To characterize the global variation of water-ice band depths, and of sub-micron particles spectral indicators, across Mimas and Tethys, we sampled the two satellites’ surfacees with a 1°x1° fixed-resolution grid and then averaged the band depths and peak values inside each square cell.3. ResultsFor both moons we find that large geologic features, such as the Odysseus and Herschel impact basins, do not correlate with water ice’s abundance variation. For Tethys, we found a quite uniform surface on both hemispheres. The only deviation from this pattern shows up on the trailing hemisphere, where we notice two north-oriented, dark areas around 225° and 315°. For Mimas, the leading and trailing hemispheres appear to be quite similar in water ice abundance, the trailing portion having water ice absorption bands lightly more suppressed than the leading side

First-principles calculations of a half-metallic ferromagnet zinc blende Zn{sub 1−x}V{sub x}Te

Energy Technology Data Exchange (ETDEWEB)

El Amine Monir, M.; Baltache, H. [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Khenata, R., E-mail: khenata_rabah@yahoo.fr [Laboratoire de Physique Quantique de la Modélisation Mathématique (LPQ3M), Université de Mascara, 29000 (Algeria); Murtaza, G. [Materials Modeling Laboratory, Department of Physics, Islamia College University, Peshawar (Pakistan); Azam, Sikander [New Technologies-Research Center, University of West Bohemia, Univerzitni 8, 306 14 Pilsen (Czech Republic); Bouhemadou, A. [Laboratory for Developing New Materials and their Characterization, Department of Physics, Faculty of Science, University Setif 1, 19000 Setif (Algeria); Al-Douri, Y. [Institute of Nano Electronic Engineering, University Malaysia Perlis, 01000 Kangar, Perlis (Malaysia); Bin Omran, S. [Department of Physics and Astronomy, College of Science, King Saud University, P.O. Box 2455, Riyadh 11451 (Saudi Arabia); Ali, Roshan [Materials Modeling Lab, Department of Physics, Post Graduate Jahanzeb College, Swat (Pakistan)

2015-03-15

First-principles calculations have been used to study the structural, elastic, electronic, magnetic and thermal properties of zinc blende Zn{sub 1−x}V{sub x}Te for x=0, 0.25, 0.50, 0.75 and 1 using the full-potential linearized augmented plane wave method (FP-LAPW) based on spin-polarized density functional theory (DFT). The electronic exchange-correlation potential is approached using the spin generalized gradient approximation (spin-GGA). The structural properties of the Zn{sub 1−x}V{sub x}Te alloys (x=0, 0.25, 0.50, 0.75 and 1) are given for the lattice constants and the bulk moduli and their pressure derivatives. The elastic constants C{sub 11}, C{sub 12} and C{sub 44} are calculated using numerical first-principles calculations implemented in the WIEN2k package. An analysis of the band structures and the densities of states reveals that Zn{sub 0.50}V{sub 0.50}Te and Zn{sub 0.75}V{sub 0.25}Te exhibit a half-metallic character, while Zn{sub 0.25}V{sub 0.75}Te is nearly half-metallic. The band structure calculations are used to estimate the spin-polarized splitting energies Δ{sub x}(d) and Δ{sub x}(pd) produced by the V(3d)-doped and s(p)–d exchange constants N{sub 0α} (conduction band) and N{sub 0β} (valence band). The p–d hybridization reduces the magnetic moment of V from its atomic charge value of 3µ{sub B} and creates small local magnetic moments on the nonmagnetic Zn and Te sites. Finally, we present the thermal effect on the macroscopic properties of these alloys, such as the thermal expansion coefficient, heat capacity and Debye temperature, based on the quasi-harmonic Debye model. - Highlights: • Some physical properties of Vanadium doped ZnTe have been investigated. • Structural parameters for the parent compounds compare well with the available data. • The elastic and thermal properties are studied for the first time.

A CMOS delay locked loop and sub-nanosecond time-to-digital converter chip

International Nuclear Information System (INIS)

Santos, D.M.; Dow, S.F.; Levi, M.E.

1995-12-01

Many high energy physics and nuclear science applications require sub-nanosecond time resolution measurements over many thousands of detector channels. Phase-locked loops have been employed in the past to obtain accurate time references for these measurements. An alternative solution, based on a delay-locked loop (DLL) is described. This solution allows for a very high level of integration yet still offers resolution in the sub-nanosecond regime. Two variations on this solution are outlined. A novel phase detector, based on the Muller C element, is used to implement a charge pump where the injected charge approaches zero as the loop approaches lock on the leading edge of an input clock reference. This greatly reduces timing jitter. In the second variation the loop locks to both the leading and trailing clock edges. In this second implementation, software coded layout generators are used to automatically layout a highly integrated, multi-channel, time to digital converter (TDC). Complex clock generation can be, achieved by taking symmetric taps off the delay elements. The two circuits, DLL and TDC, were implemented in a CMOS 1.2μm and 0.8μm technology, respectively. Test results show a timing jitter of less than 35 ps for the DLL circuit and better solution for the TDC circuit

Radiation Hard Wide Temperature Range Mixed-Signal Components, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Low temperature survivability, high performance and radiation tolerance of electronics in combination is required for NASA's surface missions. Modern sub-micron CMOS...

Ab initio study of domain structures in half-metallic CoTi{sub 1−x}Mn{sub x}Sb and thermoelectric CoTi{sub 1−x}Sc{sub x}Sb half-Heusler alloys

Energy Technology Data Exchange (ETDEWEB)

Miranda Mena, Joaquin, E-mail: joaquin.miranda@uni-bayreuth.de; Schoberth, Heiko G.; Gruhn, Thomas; Emmerich, Heike

2015-11-25

We present first-principles calculations of the electronic density of state, the structures in CoTi{sub 1−x}Sc{sub x}Sb and CoTi{sub 1−x}Mn{sub x}Sb. In addition for the latter we calculate magnetic moments. Systems with different stoichiometries are compared and low energy configurations are determined using a cluster expansion procedure. For all studied manganese concentrations, x > 0, CoTi{sub 1−x}Mn{sub x}Sb is half-metallic and magnetic, which make it interesting for spintronic applications. In contrast, with increasing scandium concentration, the band gap of CoTi{sub x}Sc{sub 1-x}Sb closes continuously, while the material changes from a semiconductor to a non-magnetic metal. For low Sc doping this material is well suited for thermoelectric applications. The electronic states close to the Fermi energy are strongly influenced by the distribution of Ti and Mn (or Ti and Sc). This has important consequences for the usage of materials in application fields like spintronics and thermoelectrics. In general, a phase separation of the alloys into a Ti rich and a Ti poor phase is energetically favored. Using mean field theory we create a phase diagram that shows the coexistence and the spinodal region. A spontaneous demixing can be used for the creation of nanodomains within the material. In the case of CoTi{sub 1−x}Sc{sub x}Sb, the resulting reduced lattice thermal conductivity is beneficial for thermoelectric applications, while in CoTi{sub 1−x}Mn{sub x}Sb the nanodomains are detrimental for polarization.

Light emission efficiency and imaging performance of Lu{sub 2}O{sub 3}:Eu nanophosphor under X-ray radiography conditions: Comparison with Gd{sub 2}O{sub 2}S:Eu

Energy Technology Data Exchange (ETDEWEB)

Seferis, I. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Department of Medical Physics, Medical School, University of Patras, 265 00 Patras (Greece); Michail, C.; Valais, I. [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Zeler, J. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Liaparinos, P.; Fountos, G.; Kalyvas, N.; David, S. [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Stromatia, F. [Department of Radiology and Nuclear Medicine, “IASO” General Hospital, Mesogion 264, 15562 Holargos (Greece); Zych, E. [Faculty of Chemistry, Wroclaw University, 14F Joliot-Curie Street, 50-383 Wroclaw (Poland); Kandarakis, I., E-mail: kandarakis@teiath.gr [Department of Biomedical Engineering, Technological Educational Institute of Athens, 122 10 Athens (Greece); Panayiotakis, G. [Department of Medical Physics, Medical School, University of Patras, 265 00 Patras (Greece)

2014-07-01

Nanocrystallic europium-activated lutetium oxide (Lu{sub 2}O{sub 3}:Eu) is a strong candidate for use in digital medical imaging applications, due to its spectroscopic and structural properties. The aim of the present study was to investigate the imaging and efficiency properties of a 33.3 mg/cm{sup 2} Lu{sub 2}O{sub 3}:Eu scintillating screen coupled to a high resolution RadEye HR CMOS photodetector under radiographic imaging conditions. Since Lu{sub 2}O{sub 3}:Eu emits light in the red wavelength range, the light emission efficiency and the imaging performance were compared with results for a Gd{sub 2}O{sub 2}S:Eu phosphor screen. Parameters such as the Absolute Efficiency (AE), the X-ray Luminescence Efficiency (XLE), and the Detector Quantum Gain (DQG), were investigated. The imaging characteristics of Lu{sub 2}O{sub 3}:Eu nanophosphor screen were investigated in terms of the Modulation Transfer Function (MTF), the Normalized Noise Power Spectrum (NNPS) and the Detective Quantum Efficiency (DQE). It was found that Lu{sub 2}O{sub 3}:Eu nanophosphor has higher AE and XLE by a factor of 1.32 and 1.37 on average, respectively, in the whole radiographic energy range in comparison with the Gd{sub 2}O{sub 2}S:Eu screen. DQG was also found higher in the energy range from 50 kVp to 100 kVp and comparable thereafter. The imaging quality of Lu{sub 2}O{sub 3}:Eu nanophosphor coupled to the CMOS sensor was found to outmatch in any aspect in comparison with the Gd{sub 2}O{sub 2}S:Eu screen. These results indicate that Lu{sub 2}O{sub 3}:Eu nanophosphor could be considered for further research in order to be used in medical imaging applications. - Highlights: • AE and XLE of Lu{sub 2}O{sub 3}:Eu nanophosphor were higher by a factor of 1.32 and 1.37 than Gd{sub 2}O{sub 2}S:Eu. • DQG was higher from 50 to 100 kVp and comparable thereafter. • Imaging performance of Lu{sub 2}O{sub 3}:Eu/CMOS was better than that of Gd{sub 2}O{sub 2}S:Eu/CMOS.

A refractory metal gate approach for micronic CMOS technology

International Nuclear Information System (INIS)

Lubowiecki, V.; Ledys, J.L.; Plossu, C.; Balland, B.

1987-01-01

In the future, devices scaling down, integration density and performance improvements are going to bring a number of conventional circuit design and process techniques to their fundamental limits. To avoid any severe limitations in MOS ULSI (Ultra Large Scale Integration) technologies, interconnection materials and schemes are required to emerge, in order to face the Megabits memory field. Among those, the gate approach will obviously take a keyrole, when the operating speed of ULSI chips will reach the practical upper limits imposed by parasitic resistances and capacitances which stem from the circuit interconnect wiring. Even if fairly suitable for MOS process, doped polycrystalline silicon is being gradually replaced by refractory metal silicide or polycide structures, which match better with low resistivity requirements. However, as we approach the submicronic IC's, higher conductivity materials will be paid more and more attention. Recently, works have been devoted and published on refractory metal gate technologies. Molybdenum or tungsten, deposited either by CVD or PVD methods, are currently reported even if some drawbacks in their process integration still remain. This paper is willing to present such an approach based on tungsten (more reliable than Molybdenum deposited by LPCVD (giving more conductive and more stable films than PVD). Deposition process will be first described. Then CMOS process flow will allow us to focus on specific refractory metal gate issues. Finally, electrical and physical properties will be assessed, which will demonstrate the feasibility of such a technology as well as the compatibility of the tungsten with most of the usual techniques

Prediction of half-metallic properties in TlCrS{sub 2} and TlCrSe{sub 2} based on density functional theory

Energy Technology Data Exchange (ETDEWEB)

Hashimzade, F.M.; Huseinova, D.A. [Institute of Physics, National Academy of Sciences of Azerbaijan, AZ 1143 Baku (Azerbaijan); Jahangirli, Z.A. [Institute of Physics, National Academy of Sciences of Azerbaijan, AZ 1143 Baku (Azerbaijan); Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, AZ 1143 Baku (Azerbaijan); Mehdiyev, B.H., E-mail: bachschi@yahoo.de [Institute of Physics, National Academy of Sciences of Azerbaijan, AZ 1143 Baku (Azerbaijan)

2017-08-01

Highlights: • Half-metallic properties of TlCrS2, TlCrSe2 and hypothetical TlCrSSe have been investigated by first-principles all-electron full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT). • Total magnetic moment keeps its integer value on a relatively wide range of changes in volume (−10% ÷ 10%) for TlCrS2 and TlCrSSe, while total magnetic moment TlCrSe2 decreases with increasing volume, approaching to integer value 3 μB. • The states at the Fermi level in the case of spin-up channel consist of a hybridization of p-states of the atom S(Se) with d-states of Cr. - Abstract: Half-metallic properties of TlCrS{sub 2}, TlCrSe{sub 2} and hypothetical TlCrSSe have been investigated by first-principles all-electron full-potential linearized augmented plane wave plus local orbital (FP-LAPW+lo) method based on density functional theory (DFT). The results of calculations show that TlCrS{sub 2} and TlCrSSe are half-metals with energy gap (E{sub g}) ∼0.12 eV for spin-down channel. Strong hybridization of p-state of chalchogen and d-state of Cr leads to bonding and antibonding states and subsequently to the appearance of a gap in spin-down channel of TlCrS{sub 2} and TlCrSSe. In the case of TlCrSe{sub 2}, there is a partial hybridization and p-state is partially present in the DOS at Fermi level making this compound nearly half-metallic. The present calculations revealed that total magnetic moment keeps its integer value on a relatively wide range of changes in volume (−10% ÷ 10%) for TlCrS{sub 2} and TlCrSSe, while total magnetic moment of TlCrSe{sub 2} decreases with increasing volume approaching to integer value 3 μB.

The 3 micron spectrum of NGC 4565

International Nuclear Information System (INIS)

Adamson, A.J.; Whittet, D.C.B.

1990-01-01

Researchers spectrum of NGC 4565 is essentially featureless. The absence of the 3.0 micron feature (Tau 3.0 less than 0.05) implies that the extinction to the nucleus does not arise to a significant degree in molecular clouds. Researchers deduce Tau 3.0/A sub V less than 0.01, compared with approx. 0.022 for GC-IRS7. These results support the conclusion (McFadzean et al. 1989) that the 3.0 micron absorption in the GC-IR sources is due to the presence of ice in a (probably single) foreground molecular cloud. The 3.4 micron feature is also weak or absent in the researchers spectrum of NGC 4565 (Tau 3.4 less than or equal to 0.07), hence, Tau 3.4/A sub V less than or equal to 0.016, compared with approx. 0.008 towards GC-IRS7. The absence of the feature in NGC 4565 at the signal-to-noise level of the current observations is consistent with a probable moderate degree of extinction towards the nucleus. The observations of NGC 4565 provide a useful comparison for studies of dust in the Galaxy. Limits have been set on the strengths of the 3.0 and 3.4 micron features in NGC 4565. The absence of 3.0 micron absorption is significant, and supports the view that the feature at this wavelength in the Galactic Centre is due to water-ice absorption in a foreground molecular cloud. The non-detection of the 3.4 micron absorption is less surprising and provides indirect support for the association between this feature and the diffuse interstellar medium. The current spectrum probably represents the best that can be achieved with a single-detector instrument within reasonable integration times. It will clearly be of interest in the future to obtain spectra of higher signal-to-noise, as a positive detection of the 3.4 micron feature in an external galaxy, even at a low level, would be of considerable astrophysical significance

Sub-half-wavelength localization of an atom via trichromatic phase control

International Nuclear Information System (INIS)

Xu Jun; Hu Xiangming

2007-01-01

We show that the trichromatic manipulation of the absorption spectrum leads to sub-half-wavelength atom localization. In particular, a three-level atom in the Λ configuration is considered, in which one transition is coupled by a trichromatic field with one sideband component being a standing-wave field while the other transition is probed by a weak monochromatic field. By varying the sum of relative phases of the sideband components of the trichromatic field to the central component, the atom is localized in either of the two half-wavelength regions with 50% detecting probability when the absorption spectrum is measured

Block copolymer stabilized nonaqueous biocompatible sub-micron emulsions for topical applications.

Science.gov (United States)

Atanase, Leonard Ionut; Riess, Gérard

2013-05-20

Polyethylene glycol (PEG) 400/Miglyol 812 non-aqueous sub-micron emulsions were developed due to the fact that they are of interest for the design of drug-loaded biocompatible topical formulations. These types of emulsions were favourably stabilized by poly (2-vinylpyridine)-b-poly (butadiene) (P2VP-b-PBut) copolymer with DPBut>DP2VP, each of these sequences being well-adapted to the solubility parameters of PEG 400 and Miglyol 812, respectively. This type of block copolymers, which might limit the Ostwald ripening, appeared to be more efficient stabilizers than low molecular weight non-ionic surfactants. The emulsion characteristics, such as particle size, stability and viscosity at different shear rates were determined as a function of the phase ratio, the copolymer concentration and storage time. It was further shown that Acyclovir, as a model drug of low water solubility, could be incorporated into the PEG 400 dispersed phase, with no significant modification of the initial emulsion characteristics. Copyright © 2013 Elsevier B.V. All rights reserved.

Flip-chip bonded optoelectronic integration based on ultrathin silicon (UTSi) CMOS

Science.gov (United States)

Hong, Sunkwang; Ho, Tawei; Zhang, Liping; Sawchuk, Alexander A.

2003-06-01

We describe the design and test of flip-chip bonded optoelectronic CMOS devices based on Peregrine Semiconductor's 0.5 micron Ultra-Thin Silicon on sapphire (UTSi) technology. The UTSi process eliminates the substrate leakage that typically results in crosstalk and reduces parasitic capacitance to the substrate, providing many benefits compared to bulk silicon CMOS. The low-loss synthetic sapphire substrate is optically transparent and has a coefficient of thermal expansion suitable for flip-chip bonding of vertical cavity surface emitting lasers (VCSELs) and detectors. We have designed two different UTSi CMOS chips. One contains a flip-chip bonded 1 x 4 photodiode array, a receiver array, a double edge triggered D-flip flop-based 2047-pattern pseudo random bit stream (PRBS) generator and a quadrature-phase LC-voltage controlled oscillator (VCO). The other chip contains a flip-chip bonded 1 x 4 VCSEL array, a driver array based on high-speed low-voltage differential signals (LVDS) and a full-balanced differential LC-VCO. Each VCSEL driver and receiver has individual input and bias voltage adjustments. Each UTSi chip is mounted on different printed circuit boards (PCBs) which have holes with about 1 mm radius for optical output and input paths through the sapphire substrate. We discuss preliminary testing of these chips.

Sub-micron Hard X-ray Fluorescence Imaging of Synthetic Elements

Science.gov (United States)

Jensen, Mark P.; Aryal, Baikuntha P.; Gorman-Lewis, Drew; Paunesku, Tatjana; Lai, Barry; Vogt, Stefan; Woloschak, Gayle E.

2013-01-01

Synchrotron-based X-ray fluorescence microscopy (SXFM) using hard X-rays focused into sub-micron spots is a powerful technique for elemental quantification and mapping, as well as microspectroscopic measurement such as μ-XANES (X-ray absorption near edge structure). We have used SXFM to image and simultaneously quantify the transuranic element plutonium at the L3 or L2 edge as well as lighter biologically essential elements in individual rat pheochromocytoma (PC12) cells after exposure to the long-lived plutonium isotope 242Pu. Elemental maps reveal that plutonium localizes principally in the cytoplasm of the cells and avoids the cell nucleus, which is marked by the highest concentrations of phosphorus and zinc, under the conditions of our experiments. The minimum detection limit under typical acquisition conditions for an average 202 μm2 cell is 1.4 fg Pu/cell or 2.9 × 10−20 moles Pu/μm2, which is similar to the detection limit of K-edge SXFM of transition metals at 10 keV. Copper electron microscopy grids were used to avoid interference from gold X-ray emissions, but traces of strontium present in naturally occurring calcium can still interfere with plutonium detection using its Lα X-ray emission. PMID:22444530

Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Directory of Open Access Journals (Sweden)

Khalil Jradi

2014-12-01

Full Text Available Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD.

Integrated X-ray and charged particle active pixel CMOS sensor arrays using an epitaxial silicon sensitive region

International Nuclear Information System (INIS)

Kleinfelder, Stuart; Bichsel, Hans; Bieser, Fred; Matis, Howard S.; Rai, Gulshan; Retiere, Fabrice; Weiman, Howard; Yamamoto, Eugene

2002-01-01

Integrated CMOS Active Pixel Sensor (APS) arrays have been fabricated and tested using X-ray and electron sources. The 128 by 128 pixel arrays, designed in a standard 0.25 micron process, use a ∼10 micron epitaxial silicon layer as a deep detection region. The epitaxial layer has a much greater thickness than the surface features used by standard CMOS APS, leading to stronger signals and potentially better signal-to-noise ratio (SNR). On the other hand, minority carriers confined within the epitaxial region may diffuse to neighboring pixels, blur images and reduce peak signal intensity. But for low-rate, sparse-event images, centroid analysis of this diffusion may be used to increase position resolution. Careful trade-offs involving pixel size and sense-node area verses capacitance must be made to optimize overall performance. The prototype sensor arrays, therefore, include a range of different pixel designs, including different APS circuits and a range of different epitaxial layer contact structures. The fabricated arrays were tested with 1.5 GeV electrons and Fe-55 X-ray sources, yielding a measured noise of 13 electrons RMS and an SNR for single Fe-55 X-rays of greater than 38

Sub-micron opto-chemical probes for studying living neurons

Science.gov (United States)

Hossein-Zadeh, M.; Delgado, J.; Schweizer, F.; Lieberman, R.

2017-02-01

We have fabricated sub-micron opto-chemical probes for pH, oxygen and calcium monitoring and demonstrated their application in intracellular and extracellular monitoring of neurons (cortical neuronal cultures and acute hippocampal slices). Using these probes, we have measured extracellular pH in the stratum radiatum of the CA1 region of mouse hippocampus upon stimulation of presynaptic Schaffer collateral axons. Synaptic transmission was monitored using standard electrophysiological techniques. We find that the local pH transiently changes in response to synaptic stimulation. In addition, the geometry of the functionalized region on the probe combined with high sensitivity imaging enables simultaneous monitoring of spatially adjacent but distinct compartments. As proof of concept we impaled cultured neurons with the probe measured calcium and pH inside as well as directly outside of neurons as we changed the pH and calcium concentration in the physiological solution in the perfusion chamber. As such these probes can be used to study the impact of the environment on both cellular and extra-cellular space. Additionally as the chemical properties of the surrounding medium can be controlled and monitored with high precision, these probes enable differential measurement of the target parameter referenced to a stable bath. This approach eliminates the uncertainties associated with non-chemical fluctuations in the fluorescent emission and result in a self-calibrated opto-chemical probe. We have also demonstrated multifunctional probes that are capable of measuring up to three parameters in the extracellular space in brain slices.

A photovoltaic-driven and energy-autonomous CMOS implantable sensor.

Science.gov (United States)

Ayazian, Sahar; Akhavan, Vahid A; Soenen, Eric; Hassibi, Arjang

2012-08-01

An energy-autonomous, photovoltaic (PV)-driven and MRI-compatible CMOS implantable sensor is presented. On-chip P+/N-well diode arrays are used as CMOS-compatible PV cells to harvest μW's of power from the light that penetrates into the tissue. In this 2.5 mm × 2.5 mm sub-μW integrated system, the in-vivo physiological signals are first measured by using a subthreshold ring oscillator-based sensor, the acquired data is then modulated into a frequency-shift keying (FSK) signal, and finally transmitted neuromorphically to the skin surface by using a pair of polarized electrodes.

Broadband sub-THz spectroscopy modules integrated in 65-nm CMOS technology

NARCIS (Netherlands)

Matters-Kammerer, M.K.; van Goor, D.; Tripodi, L.

2017-01-01

The design and characterization of a broadband 20-480 GHz continuously tuneable on-chip spectrometer based on non-linear transmission lines in 65-nm CMOS technology is presented. The design procedure of the sampler that detects the ultra-broadband signal from the transmitter in time and frequency

Improved high temperature refractory. [MgCr/sub 2/O/sub 4/ composite with ZrO/sub 2/

Science.gov (United States)

Singh, J.P.; James, J.; Picciolo, J.J.

1985-12-10

A high chromia refractory composite has been developed with improved thermal shock resistance and containing about 5 to 30 wt % of unstabilized ZrO/sub 2/ having a temperature-dependent phase change resulting in large expansion mismatch between the ZrO/sub 2/ and the chromia matrix which causes microcracks to form during cooling in the high chromia matrix. The particle size preferably is primarily between about 0.6 to 5 microns and particularly below about 3 microns with an average size in the order of 1.2 to 1.8 microns.

1-bit sub threshold full adders in 65nm CMOS technology

DEFF Research Database (Denmark)

Moradi, Farshad; Wisland, Dag T.; Tuan Vu, Cao

In this paper a new full adder (FA) circuit optimized for ultra low power operation is proposed. The circuit is based on modified XOR gates operated in the subthreshold region to minimize the power consumption. Simulated results using 65 nm standarad CMOS models are provided. The simulation results...

Grain orientation and strain measurements in sub-micron wide passivated individual aluminum test structures

International Nuclear Information System (INIS)

Tamura, N.; Valek, B.C.; Spolenak, R.; MacDowell, A.A.; Celestre, R.S.; Padmore, H.A.; Brown, W.L.; Marieb, T.; Bravman, J.C.; Batterman, B.W.; Patel, J.R.

2001-01-01

An X-ray microdiffraction dedicated beamline, combining white and monochromatic beam capabilities, has been built at the Advanced Light Source. The purpose of this beamline is to address the myriad of problems in Materials Science and Physics that require submicron x-ray beams for structural characterization. Many such problems are found in the general area of thin films and nano-materials. For instance, the ability to characterize the orientation and strain state in individual grains of thin films allows us to measure structural changes at a very local level. These microstructural changes are influenced heavily by such parameters as deposition conditions and subsequent treatment. The accurate measurement of strain gradients at the micron and sub-micron level finds many applications ranging from the strain state under nano-indenters to gradients at crack tips. Undoubtedly many other applications will unfold in the future as we gain experience with the capabilities and limitations of this instrument. We have applied this technique to measure grain orientation and residual stress in single grains of pure Al interconnect lines and preliminary results on post-electromigration test experiments are presented. It is shown that measurements with this instrument can be used to resolve the complete stress tensor (6 components) in a submicron volume inside a single grain of Al under a passivation layer with an overall precision of about 20 MPa. The microstructure of passivated lines appears to be complex, with grains divided into identifiable subgrains and noticeable local variations of both tensile/compressive and shear stresses within single grains

Nano-CMOS gate dielectric engineering

CERN Document Server

Wong, Hei

2011-01-01

According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

First-principles study on half-metallic ferromagnetic properties of Zn{sub 1-x}V{sub x}Se ternary alloys

Energy Technology Data Exchange (ETDEWEB)

Khatta, Swati; Tripathi, S.K.; Prakash, Satya [Panjab University, Central of Advanced Study in Physics, Department of Physics, Chandigarh (India)

2017-09-15

The spin-polarised density functional theory along with self-consistent plane-wave pseudopotential is used to investigate the half-metallic ferromagnetic properties of ternary alloys Zn{sub 1-x}V{sub x}Se. The generalized gradient approximation is used for exchange-correlation potential. The equilibrium lattice constants, bulk modulus, and its derivatives are calculated. The calculated spin-polarised energy-band structures reveal that these alloys are half-metallic for x = 0.375 and 0.50 and nearly half-metallic for other values of x. The estimated direct and indirect bandgaps may be useful for the magneto-optical absorption experiments. It is found that there is strong Zn 4s, Se 4p, and V 3d orbital hybridization in the conduction bands of both the spins, while Se 4p and V 3d orbital hybridization predominates in the valence bands of both the spins. The s, p-d, and p-d orbital hybridization reduces the local magnetic moment of V atoms and small local magnetic moments are produced on Zn and Se atoms which get coupled with V atoms in ferromagnetic and antiferromagnetic phases, respectively. The conduction and valence-band-edge splittings and exchange constants predict the ferromagnetism in these alloys. The conduction band-impurity (s and p-d) exchange interaction is more significant for ferromagnetism in these alloys than the valence band-impurity (p-d) exchange interaction. (orig.)

Micron Scale Mineralogy

Science.gov (United States)

Caldwell, W. A.; Tamura, N.; Celestre, R. S.; Padmore, H. A.; Patel, J. R.

2002-12-01

Although x-ray diffraction has been used for nearly a century as the mineralogist's definitive tool in determining crystalline structures, it has proved impossible to use this technique to spatially resolve the highly heterogeneous nature of many minerals at the mesoscopic level. Due to recent revolutions in the brightness of x-ray sources and in our ability to focus x-rays, we can now carry out conventional monochromatic rotation crystallography as well as Laue diffraction with sub-micron spatial resolution and produce maps of orientation, strain, mineral type, and even chemical speciation over tens of microns in a short amount of time. We have pioneered the development of these techniques at the 3rd generation synchrotron radiation source (Advanced Light Source) in Berkeley, and will describe their application to understanding the structure of a quartz-geode. Our results show the manner in which grain structure and texture change as a function of distance from the cavity wall and are compared with models of crystal growth in such systems. This example highlights the great utility of a synchrotron based x-ray micro-diffraction beamline and the possibilities it opens to the mineralogist.

High intensity laser interactions with sub-micron droplets

International Nuclear Information System (INIS)

Mountford, L.C.

1999-01-01

A high-density source of liquid ethanol droplets has been developed, characterised and used in laser interaction studies for the first time. Mie Scattering and attenuation measurements show that droplets with a radius of (0.5 ± 0.1) μm and atomic densities of 10 19 atoms/cm 3 can be produced, bridging the gap between clusters and macroscopic solids. Lower density (10 16 cm -3 ) sprays can also be produced and these are electrostatically split into smaller droplets with a radius of (0.3 ± 0.1) μm. This work has been accepted for publication in Review of Scientific Instruments. A range of high intensity interaction experiments have been carried out with this unique sub-micron source. The absolute yield of keV x-rays, generated using 527 nm, 2 ps pulses focused to ∼10 17 W/cm 2 , was measured for the first time. ∼7 μJ of x-rays with photon energies above 1 keV were produced, comparable to yields obtained from much higher Z Xenon clusters. At intensities ≤10 16 W/cm 2 the yield from droplets exceeds that from solid targets of similar Z. The droplet medium is debris free and self-renewing, providing a suitable x-ray source for lithographic techniques. Due to the spacing between the droplets, it was expected that the droplet plasma temperature would exceed that of a solid target plasma, which is typically limited by rapid heat conduction to <1 keV. Analysis of the x-ray data shows this to be true with a mean droplet plasma temperature of (2 ± 0.8) keV, and a number of measurements exceeding 5 keV (to appear in Applied Physics Letters). The absorption of high intensity laser pulses in the dense spray has been measured for the first time and this was found to be wavelength and polarisation independent and in excess of 60%. These first interaction measurements clearly indicate that there are significant differences between the laser heating of droplet, solid and cluster targets. (author)

A capacitive CMOS-MEMS sensor designed by multi-physics simulation for integrated CMOS-MEMS technology

Science.gov (United States)

Konishi, Toshifumi; Yamane, Daisuke; Matsushima, Takaaki; Masu, Kazuya; Machida, Katsuyuki; Toshiyoshi, Hiroshi

2014-01-01

This paper reports the design and evaluation results of a capacitive CMOS-MEMS sensor that consists of the proposed sensor circuit and a capacitive MEMS device implemented on the circuit. To design a capacitive CMOS-MEMS sensor, a multi-physics simulation of the electromechanical behavior of both the MEMS structure and the sensing LSI was carried out simultaneously. In order to verify the validity of the design, we applied the capacitive CMOS-MEMS sensor to a MEMS accelerometer implemented by the post-CMOS process onto a 0.35-µm CMOS circuit. The experimental results of the CMOS-MEMS accelerometer exhibited good agreement with the simulation results within the input acceleration range between 0.5 and 6 G (1 G = 9.8 m/s2), corresponding to the output voltages between 908.6 and 915.4 mV, respectively. Therefore, we have confirmed that our capacitive CMOS-MEMS sensor and the multi-physics simulation will be beneficial method to realize integrated CMOS-MEMS technology.

Nanosecond-laser induced crosstalk of CMOS image sensor

Science.gov (United States)

Zhu, Rongzhen; Wang, Yanbin; Chen, Qianrong; Zhou, Xuanfeng; Ren, Guangsen; Cui, Longfei; Li, Hua; Hao, Daoliang

2018-02-01

The CMOS Image Sensor (CIS) is photoelectricity image device which focused the photosensitive array, amplifier, A/D transfer, storage, DSP, computer interface circuit on the same silicon substrate[1]. It has low power consumption, high integration,low cost etc. With large scale integrated circuit technology progress, the noise suppression level of CIS is enhanced unceasingly, and its image quality is getting better and better. It has been in the security monitoring, biometrice, detection and imaging and even military reconnaissance and other field is widely used. CIS is easily disturbed and damaged while it is irradiated by laser. It is of great significance to study the effect of laser irradiation on optoelectronic countermeasure and device for the laser strengthening resistance is of great significance. There are some researchers have studied the laser induced disturbed and damaged of CIS. They focused on the saturation, supersaturated effects, and they observed different effects as for unsaturation, saturation, supersaturated, allsaturated and pixel flip etc. This paper research 1064nm laser interference effect in a typical before type CMOS, and observring the saturated crosstalk and half the crosstalk line. This paper extracted from cmos devices working principle and signal detection methods such as the Angle of the formation mechanism of the crosstalk line phenomenon are analyzed.

Two-dimensional sub-half-wavelength atom localization via controlled spontaneous emission.

Science.gov (United States)

Wan, Ren-Gang; Zhang, Tong-Yi

2011-12-05

We propose a scheme for two-dimensional (2D) atom localization based on the controlled spontaneous emission, in which the atom interacts with two orthogonal standing-wave fields. Due to the spatially dependent atom-field interaction, the position probability distribution of the atom can be directly determined by measuring the resulting spontaneously emission spectrum. The phase sensitive property of the atomic system leads to quenching of the spontaneous emission in some regions of the standing-waves, which significantly reduces the uncertainty in the position measurement of the atom. We find that the frequency measurement of the emitted light localizes the atom in half-wavelength domain. Especially the probability of finding the atom at a particular position can reach 100% when a photon with certain frequency is detected. By increasing the Rabi frequencies of the driving fields, such 2D sub-half-wavelength atom localization can acquire high spatial resolution.

Analysis of functional failure mode of commercial deep sub-micron SRAM induced by total dose irradiation

International Nuclear Information System (INIS)

Zheng Qi-Wen; Cui Jiang-Wei; Zhou Hang; Yu De-Zhao; Yu Xue-Feng; Lu Wu; Guo Qi; Ren Di-Yuan

2015-01-01

Functional failure mode of commercial deep sub-micron static random access memory (SRAM) induced by total dose irradiation is experimentally analyzed and verified by circuit simulation. We extensively characterize the functional failure mode of the device by testing its electrical parameters and function with test patterns covering different functional failure modes. Experimental results reveal that the functional failure mode of the device is a temporary function interruption caused by peripheral circuits being sensitive to the standby current rising. By including radiation-induced threshold shift and off-state leakage current in memory cell transistors, we simulate the influence of radiation on the functionality of the memory cell. Simulation results reveal that the memory cell is tolerant to irradiation due to its high stability, which agrees with our experimental result. (paper)

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

Science.gov (United States)

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Toward selective electrochemical 'E-tongue': Potentiometric DO sensor based on sub-micron ZnO-RuO{sub 2} sensing electrode

Energy Technology Data Exchange (ETDEWEB)

Zhuiykov, Serge, E-mail: serge.zhuiykov@csiro.au [CSIRO, Materials Science and Engineering Division, 37 Graham Road, Highett, VIC 3190 (Australia); Kats, Eugene [CSIRO, Materials Science and Engineering Division, 37 Graham Road, Highett, VIC 3190 (Australia); Plashnitsa, Vladimir [Research and Education Centre of Carbon Resources, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan); Miura, Norio [KASTEC, Kyushu University, Kasuga-shi, Fukuoka 816-8580 (Japan)

2011-06-01

Highlights: > We examine ZnO-doped RuO{sub 2} sensing electrode of DO sensor. > Study of ZnO-RuO{sub 2} confirmed the development of high surface-to-volume ratio. > Developed sensing electrode is insensitive to the presence of various dissolved salts. > 20 mol% ZnO-doped RuO{sub 2} sensing electrode enables maximum DO sensitivity. > We conclude that DO sensor based on ZnO-RuO{sub 2} electrode can work at 11-30 deg. C. - Abstract: Planar dissolved oxygen (DO) sensors based on thick-film ZnO-RuO{sub 2} sensing electrodes (SEs) with different mol% of ZnO were prepared on the alumina substrates using a screen-printing method and their structural and electrochemical properties were closely studied by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX), electrochemical impedance spectroscopy (EIS) and energy-dispersive spectroscopy (EDS) techniques. Structural and electrochemical properties of ZnO-RuO{sub 2}-SEs have been investigated. Interference testing ascertained that the DO sensor based on sub-micron ZnO-RuO{sub 2}-SE is insensitive to the presence of various dissolved ions including Cl{sup -}, Li{sup +}, SO{sub 4}{sup 2-}, NO{sup 3-}, Ca{sup 2+}, PO{sub 4}{sup 3-}, Mg{sup 2+}, Na{sup +} and K{sup +} within a concentration range of 10{sup -7} to 10{sup -1} mol/L for DO measurement from 0.5 to 8.0 ppm in the test solution at a temperature range of 11-30 deg. C. These dissolved salts had practically no effect on the sensor's output potential difference response, whereas Br{sup -} ions had some effects at concentration more than 10{sup -3} mol/L. The relationship between DO and the sensor's potential difference was found to be relatively linear with the maximum sensitivity of -50.6 mV per decade was achieved at 20 mol% ZnO at 7.35 pH. The response and recovery time to pH changes for the planar device based on 20 mol% ZnO-RuO{sub 2}-SE was found to be 10 and 25 s

Deposition and retention patterns for 3-, 9-, and 15-micron latex microspheres inhaled by rats and guinea pigs

International Nuclear Information System (INIS)

Snipes, M.B.; Olson, T.R.; Yeh, H.C.

1988-01-01

This study was designed to determine the deposition patterns and fate of large particles inhaled by two species of small laboratory animals during nose breathing. Rats and guinea pigs inhaled 3-, 9-, or 15 micron polystyrene latex microspheres labeled with 46 Sc. Approximately 1.4% and 0.55% of the initial internally deposited body burden of 3-micron microspheres was in the alveolar region of the respiratory tract of rats and guinea pigs, respectively. None of the 9- or 15-micron microspheres were detected in the alveolar regions of the rats or guinea pigs. Ninety-five to 99% of the deposited microspheres cleared from these animals with biological half-times of 0.5-1.0 day. Most of the cleared radioactivity was in the feces. Approximations for long-term biological half-times for alveolar retention of the 3-micron microspheres were 63 days for rats and 83 days for guinea pigs. About 1% of the initial lung burden of 3-micron microspheres was translocated from lung to lung-associated lymph nodes in both species; none of the 9- or 15-micron microspheres were detected in those lymph nodes. Small fractions of the microspheres initially deposited in the airways of the head were retained with biological clearance half-times ranging from 9 to 350 days. Results from this study do not allow projections for deposition and retention patterns for similar particles inhaled by humans. Such projections must come from studies with humans, or from studies with animal species having deposition patterns for inhaled materials more comparable to those of humans

A high-speed low-noise transimpedance amplifier in a 025 mum CMOS technology

CERN Document Server

Anelli, G; Casagrande, L; Despeisse, Matthieu; Jarron, Pierre; Pelloux, Nicolas; Saramad, Shahyar

2003-01-01

We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. The main feature of this design is the use of a transistor in the feedback path instead of a resistor. The circuit has been optimized for reading signals coming from silicon strip detectors with few pF input capacitance. For an input charge of 4fC, an input capacitance of 4pF and a transresistance of 135kOmega, we have measured an output pulse fall time of 3ns and an Equivalent Noise Charge (ENC) of around 350 electrons rms. In view of the operation of the chip at cryogenic temperatures, measurements at 130K have also been carried out, showing an overall improvement in the performance of the chip. Fall times down to 1.5ns have been measured. An integrated circuit containing 32 channels has been designed and wire bonded to a silicon strip detector and successfully used for the constructio...

Characterisation of sub-micron particle number concentrations and formation events in the western Bushveld Igneous Complex, South Africa

Directory of Open Access Journals (Sweden)

A. Hirsikko

2012-05-01

Full Text Available South Africa holds significant mineral resources, with a substantial fraction of these reserves occurring and being processed in a large geological structure termed the Bushveld Igneous Complex (BIC. The area is also highly populated by informal, semi-formal and formal residential developments. However, knowledge of air quality and research related to the atmosphere is still very limited in the area. In order to investigate the characteristics and processes affecting sub-micron particle number concentrations and formation events, air ion and aerosol particle size distributions and number concentrations, together with meteorological parameters, trace gases and particulate matter (PM were measured for over two years at Marikana in the heart of the western BIC. The observations showed that trace gas (i.e. SO<sub>2sub>, NO<sub>x>, CO and black carbon concentrations were relatively high, but in general within the limits of local air quality standards. The area was characterised by very high condensation sink due to background aerosol particles, PM<sub>10sub> and O<sub>3sub> concentration. The results indicated that high amounts of Aitken and accumulation mode particles originated from domestic burning for heating and cooking in the morning and evening, while during daytime SO<sub>2sub>-based nucleation followed by the growth by condensation of vapours from industrial, residential and natural sources was the most probable source for large number concentrations of nucleation and Aitken mode particles. Nucleation event day frequency was extremely high, i.e. 86% of the analysed days, which to the knowledge of the authors is the highest frequency ever reported. The air mass back trajectory and wind direction analyses showed that the secondary particle formation was influenced both by local and regional pollution and vapour sources. Therefore, our observation of the annual cycle and magnitude of the particle formation and growth rates during

Galvanostatic Intermittent Titration and Performance Based Analysis of LiNi<sub>0.5sub>Co>0.2sub> Mn<sub>0.3sub>O>2sub>Cathode

Energy Technology Data Exchange (ETDEWEB)

Verma, Ankit; Smith, Kandler; Santhanagopalan, Shriram; Abraham, Daniel; Yao, Koffi Pierre; Mukherjee, Partha P.

2017-01-01

Galvanostatic intermittent titration technique (GITT) – a popular method for characterizing kinetic and transport properties of battery electrodes – is predicated on the proper evaluation of electrode active area. LiNi0.5044Co0.1986Mn0.2970O2 (NCM523) material exhibits a complex morphology in which sub-micron primary particles aggregate to form secondary particle agglomerates. This work proposes a new active area formulation for primary/secondary particle agglomerate materials to better mimic the morphology of NCM532 electrodes. This formulation is then coupled with macro-homogeneous models to simulate GITT and half-cell performance of NCM523 electrodes. Subsequently, the model results are compared against the experimental results to refine the area formulation. A single parameter, the surface roughness factor, is proposed to mimic the change in interfacial area, diffusivity and exchange current density simultaneously and detailed modeling results are presented to provide valuable insights into the efficacy of the formulation.

Post-CMOS selective electroplating technique for the improvement of CMOS-MEMS accelerometers

International Nuclear Information System (INIS)

Liu, Yu-Chia; Tsai, Ming-Han; Fang, Weileun; Tang, Tsung-Lin

2011-01-01

This study presents a simple approach to improve the performance of the CMOS-MEMS capacitive accelerometer by means of the post-CMOS metal electroplating process. The metal layer can be selectively electroplated on the MEMS structures at low temperature and the thickness of the metal layer can be easily adjusted by this process. Thus the performance of the capacitive accelerometer (i.e. sensitivity, noise floor and the minimum detectable signal) can be improved. In application, the proposed accelerometers have been implemented using (1) the standard CMOS 0.35 µm 2P4M process by CMOS foundry, (2) Ti/Au seed layers deposition/patterning by MEMS foundry and (3) in-house post-CMOS electroplating and releasing processes. Measurements indicate that the sensitivity is improved 2.85-fold, noise is decreased near 1.7-fold and the minimum detectable signal is improved from 1 to 0.2 G after nickel electroplating. Moreover, unwanted structure deformation due to the temperature variation is significantly suppressed by electroplated nickel.

Current-Mode CMOS A/D Converter for pA to nA Input Currents

DEFF Research Database (Denmark)

Breten, Madalina; Lehmann, Torsten; Bruun, Erik

1999-01-01

This paper describes a current mode A/D converter designed for a maximum input current range of 5nA and a resolution of the order of 1pA. The converter is designed for a potentiostat for amperometric chemical sensors and provides a constant polarization voltage for the measuring electrode....... A prototype chip using the dual slope conversion method has been fabricated in a 0.7micron CMOS process. Experimental results from this converter are reported. Design problems and limitations of the converter are discussed and a new conversion technique providing a larger dynamic range and easy calibration...

Prediction of total dose effects on sub-micron process metal oxide semiconductor devices

International Nuclear Information System (INIS)

Kamimura, Hiroshi; Kato, Masataka.

1991-01-01

A method for correcting leakage currents is described to predict the radiation-induced threshold voltage shift of sub-micron MOSFETs. A practical model for predicting the leakage current generated by irradiation is also given on the basis of experimental results on 0.8-μm process MOSFETs. The constants in the threshold voltage shift model are determined from the 'true' I-V characteristic of the MOSFET, which is obtained by correction of leakage currents due to characteristic change of a parasitic transistor. In this way, the threshold voltage shift of the n-channel MOSFET irradiated at a low dose rate of 2 Gy(Si)/h was also calculated by using data from a high dose rate irradiation experiment (100 Gy(Si)/h, 5 h). The calculated result well represented the tendency of measured data on threshold voltage shift. The radiation-induced leakage current was considered to decay approximately in two exponential modes. The constants in this leakage current model were determined from the above high dose rate experiment. The response of leakage current predicted at a low dose rate of 2 Gy(Si)/h approximately agreed with that measured during and after irradiation. (author)

Sub-cell turning to accomplish micron-level alignment of precision assemblies

Science.gov (United States)

Kumler, James J.; Buss, Christian

2017-08-01

Higher performance expectations for complex optical systems demand tighter alignment requirements for lens assembly alignment. In order to meet diffraction limited imaging performance over wide spectral bands across the UV and visible wavebands, new manufacturing approaches and tools must be developed if the optical systems will be produced consistently in volume production. This is especially applicable in the field of precision microscope objectives for life science, semiconductor inspection and laser material processing systems. We observe a rising need for the improvement in the optical imaging performance of objective lenses. The key challenge lies in the micron-level decentration and tilt of each lens element. One solution for the production of high quality lens systems is sub-cell assembly with alignment turning. This process relies on an automatic alignment chuck to align the optical axis of a mounted lens to the spindle axis of the machine. Subsequently, the mount is cut with diamond tools on a lathe with respect to the optical axis of the mount. Software controlled integrated measurement technology ensures highest precision. In addition to traditional production processes, further dimensions can be controlled in a very precise manner, e.g. the air gaps between the lenses. Using alignment turning simplifies further alignment steps and reduces the risk of errors. This paper describes new challenges in microscope objective design and manufacturing, and addresses difficulties with standard production processes. A new measurement and alignment technique is described, and strengths and limitations are outlined.

BioCMOS Interfaces and Co-Design

CERN Document Server

Carrara, Sandro

2013-01-01

The application of CMOS circuits and ASIC VLSI systems to problems in medicine and system biology has led to the emergence of Bio/CMOS Interfaces and Co-Design as an exciting and rapidly growing area of research. The mutual inter-relationships between VLSI-CMOS design and the biophysics of molecules interfacing with silicon and/or onto metals has led to the emergence of the interdisciplinary engineering approach to Bio/CMOS interfaces. This new approach, facilitated by 3D circuit design and nanotechnology, has resulted in new concepts and applications for VLSI systems in the bio-world. This book offers an invaluable reference to the state-of-the-art in Bio/CMOS interfaces. It describes leading-edge research in the field of CMOS design and VLSI development for applications requiring integration of biological molecules onto the chip. It provides multidisciplinary content ranging from biochemistry to CMOS design in order to address Bio/CMOS interface co-design in bio-sensing applications.

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

Energy Technology Data Exchange (ETDEWEB)

Nguyen, N.D., E-mail: Duy.Nguyen@imec.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Rosseel, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Takeuchi, S. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Physics and Astronomy, KU Leuven, B-3001 Leuven (Belgium); Everaert, J.-L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Yang, L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry and INPAC Institute, KU Leuven, B-3001 Leuven (Belgium); Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, 464-8603 (Japan); Sakai, A. [Department of System Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Loo, R. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, J.C. [TSMC, R and D, 8, Li-Hsin 6th Rd., Hsinchu Science-Based Park, Hsinchu, Taiwan (China); TSMC assignee at IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Instituut voor Kern- en Stralingsfysika - IKS, KU Leuven, B-3001 Leuven (Belgium); Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

2010-01-01

We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 {sup o}C, we measured an active dopant concentration of about 2.1 x 10{sup 20} cm{sup -} {sup 3} and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10{sup 13} cm{sup -} {sup 2}) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

International Nuclear Information System (INIS)

Nguyen, N.D.; Rosseel, E.; Takeuchi, S.; Everaert, J.-L.; Yang, L.; Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H.; Zaima, S.; Sakai, A.; Loo, R.; Lin, J.C.; Vandervorst, W.; Caymax, M.

2010-01-01

We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 o C, we measured an active dopant concentration of about 2.1 x 10 20 cm - 3 and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10 13 cm - 2 ) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

Micron scale spectroscopic analysis of materials

International Nuclear Information System (INIS)

James, David; Finlayson, Trevor; Prawer, Steven

1991-01-01

The goal of this proposal is the establishment of a facility which will enable complete micron scale spectroscopic analysis of any sample which can be imaged in the optical microscope. Current applications include studies of carbon fibres, diamond thin films, ceramics (zirconia and high T c superconductors), semiconductors, wood pulp, wool fibres, mineral inclusions, proteins, plant cells, polymers, fluoride glasses, and optical fibres. The range of interests crosses traditional discipline boundaries and augurs well for a truly interdisciplinary collaboration. Developments in instrumentation such as confocal imaging are planned to achieve sub-micron resolution, and advances in computer software and hardware will enable the aforementioned spectroscopies to be used to map molecular and crystalline phases on the surfaces of materials. Coupled with existing compositional microprobes (e.g. the proton microprobe) the possibilities for the development of new, powerful, hybrid imaging technologies appear to be excellent

A CMOS G{sub m}-C complex filter with on-chip automatic tuning for wireless sensor network application

Energy Technology Data Exchange (ETDEWEB)

Wan Chuanchuan; Li Zhiqun; Hou Ningbing, E-mail: zhiqunli@seu.edu.cn [Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)

2011-05-15

A G{sub m}-C complex filter with on-chip automatic tuning for wireless sensor networks is designed and implemented using 0.18 {mu}m CMOS process. This filter is synthesized from a low-pass 5th-order Chebyshev RLC ladder filter prototype by means of capacitors and fully balanced transconductors. A conventional phase-locked loop is used to realize the on-chip automatic tuning for both center frequency and bandwidth control. The filter is centered at 2 MHz with a bandwidth of 2.4 MHz. The measured results show that the filter provides more than 45 dB image rejection while the ripple in the pass-band is less than 1.2 dB. The complete filter including on-chip tuning circuit consumes 4.9 mA with 1.8 V single supply voltage. (semiconductor integrated circuits)

The effects of transistor source-to-gate bridging faults in complex CMOS gates

Science.gov (United States)

Visweswaran, G. S.; Ali, Akhtar-Uz-Zaman M.; Lala, Parag K.; Hartmann, Carlos R. P.

1991-06-01

A study of the effect of gate-to-source bridging faults in the pull-up section of a complex CMOS gate is presented. The manifestation of these faults depends on the resistance value of the connection causing the bridging. It is shown that such faults manifest themselves either as stuck-at or stuck-open faults and can be detected by tests for stuck-at and stuck-open faults generated for the equivalent logic current. It is observed that for transistor channel lengths larger than 1 microns there exists a range of values of the bridging resistance for which the fault behaves as a pseudo-stuck-open fault.

3D integration of planar crossbar memristive devices with CMOS substrate

International Nuclear Information System (INIS)

Lin, Peng; Pi, Shuang; Xia, Qiangfei

2014-01-01

Planar memristive devices with bottom electrodes embedded into the substrates were integrated on top of CMOS substrates using nanoimprint lithography to implement hybrid circuits with a CMOL-like architecture. The planar geometry eliminated the mechanically and electrically weak parts, such as kinks in the top electrodes in a traditional crossbar structure, and allowed the use of thicker and thus less resistive metal wires as the bottom electrodes. Planar memristive devices integrated with CMOS have demonstrated much lower programing voltages and excellent switching uniformity. With the inclusion of the Moiré pattern, the integration process has sub-20 nm alignment accuracy, opening opportunities for 3D hybrid circuits in applications in the next generation of memory and unconventional computing. (paper)

Calculation of the soft error rate of submicron CMOS logic circuits

International Nuclear Information System (INIS)

Juhnke, T.; Klar, H.

1995-01-01

A method to calculate the soft error rate (SER) of CMOS logic circuits with dynamic pipeline registers is described. This method takes into account charge collection by drift and diffusion. The method is verified by comparison of calculated SER's to measurement results. Using this method, the SER of a highly pipelined multiplier is calculated as a function of supply voltage for a 0.6 microm, 0.3 microm, and 0.12 microm technology, respectively. It has been found that the SER of such highly pipelined submicron CMOS circuits may become too high so that countermeasures have to be taken. Since the SER greatly increases with decreasing supply voltage, low-power/low-voltage circuits may show more than eight times the SER for half the normal supply voltage as compared to conventional designs

Hybrid CMOS/Molecular Integrated Circuits

Science.gov (United States)

Stan, M. R.; Rose, G. S.; Ziegler, M. M.

CMOS silicon technologies are likely to run out of steam in the next 10-15 years despite revolutionary advances in the past few decades. Molecular and other nanoscale technologies show significant promise but it is unlikely that they will completely replace CMOS, at least in the near term. This chapter explores opportunities for using CMOS and nanotechnology to enhance and complement each other in hybrid circuits. As an example of such a hybrid CMOS/nano system, a nanoscale programmable logic array (PLA) based on majority logic is described along with its supplemental CMOS circuitry. It is believed that such systems will be able to sustain the historical advances in the semiconductor industry while addressing manufacturability, yield, power, cost, and performance challenges.

Non-uniform plastic deformation of micron scale objects

DEFF Research Database (Denmark)

Niordson, Christian Frithiof; Hutchinson, J. W.

2003-01-01

Significant increases in apparent flow strength are observed when non-uniform plastic deformation of metals occurs at the scale ranging from roughly one to ten microns. Several basic plane strain problems are analyzed numerically in this paper based on a new formulation of strain gradient...... plasticity. The problems are the tangential and normal loading of a finite rectangular block of material bonded to rigid platens and having traction-free ends, and the normal loading of a half-space by a flat, rigid punch. The solutions illustrate fundamental features of plasticity at the micron scale...... that are not captured by conventional plasticity theory. These include the role of material length parameters in establishing the size dependence of strength and the elevation of resistance to plastic flow resulting from constraint on plastic flow at boundaries. Details of the finite element method employed...

CMOS MEMS Fabrication Technologies and Devices

Directory of Open Access Journals (Sweden)

Hongwei Qu

2016-01-01

Full Text Available This paper reviews CMOS (complementary metal-oxide-semiconductor MEMS (micro-electro-mechanical systems fabrication technologies and enabled micro devices of various sensors and actuators. The technologies are classified based on the sequence of the fabrication of CMOS circuitry and MEMS elements, while SOI (silicon-on-insulator CMOS MEMS are introduced separately. Introduction of associated devices follows the description of the respective CMOS MEMS technologies. Due to the vast array of CMOS MEMS devices, this review focuses only on the most typical MEMS sensors and actuators including pressure sensors, inertial sensors, frequency reference devices and actuators utilizing different physics effects and the fabrication processes introduced. Moreover, the incorporation of MEMS and CMOS is limited to monolithic integration, meaning wafer-bonding-based stacking and other integration approaches, despite their advantages, are excluded from the discussion. Both competitive industrial products and state-of-the-art research results on CMOS MEMS are covered.

Overview of CMOS process and design options for image sensor dedicated to space applications

Science.gov (United States)

Martin-Gonthier, P.; Magnan, P.; Corbiere, F.

2005-10-01

With the growth of huge volume markets (mobile phones, digital cameras...) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain. Space applications can of course benefit from these improvements. To illustrate this evolution, this paper reports results from three technologies that have been evaluated with test vehicles composed of several sub arrays designed with some space applications as target. These three technologies are CMOS standard, improved and sensor optimized process in 0.35μm generation. Measurements are focussed on quantum efficiency, dark current, conversion gain and noise. Other measurements such as Modulation Transfer Function (MTF) and crosstalk are depicted in [1]. A comparison between results has been done and three categories of CMOS process for image sensors have been listed. Radiation tolerance has been also studied for the CMOS improved process in the way of hardening the imager by design. Results at 4, 15, 25 and 50 krad prove a good ionizing dose radiation tolerance applying specific techniques.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal; Elshurafa, Amro M.; Mohammad, Mohammad Ali; Nelson-Fitzpatrick, Nathan E.; Evoy, S.

2012-01-01

. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly

A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

Science.gov (United States)

Wallace, Robert M.

2001-03-01

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

The evaluation of microstructure and mechanical properties of sintered sub-micron WC-Co powders

International Nuclear Information System (INIS)

Nor Izan Izura; Mohd Asri Selamat; Noraizham Mohamad Diah; Talib Ria Jaafar

2007-01-01

A cemented tungsten carbide (WC-Co) is widely used for a variety of machining, cutting, drilling and other applications. The properties of this tungsten heavy alloy are sensitive to processing and degraded by residual porosity. The sequence of high end powder metallurgy process include mixing, compacting and followed by multi-atmosphere sintering of green compact were analyzed. The sub micron (<1.0 μm) and less than 10.0 μm of WC powders are sintered with a metal binder 6% Co to provide pore-free part. The powder compacts were sintered at temperatures cycle in the range of 1200 degree Celsius-1550 degree Celsius in nitrogen-based sintering atmosphere. To date, however there have been few reported studies in the literature that the best sintering was carried out via liquid phase sintering in vacuum at approximately 1500 degree Celsius. from this study we found that in order to attain high mechanical properties, a fine grain size of powder is necessary. Therefore, the attention of this work is to develop and produce wear resistant component with better properties or comparable to the commercial ones. (author)

New long-wavelength Nd:YAG laser at 1.44 micron: effect on brain.

Science.gov (United States)

Martiniuk, R; Bauer, J A; McKean, J D; Tulip, J; Mielke, B W

1989-02-01

A wavelength-shifted Nd:YAG laser, tuned to coincide with the infrared absorption peak of water at 1.44 microns, was used to make lesions in normal rabbit brain. A total of 48 lesions were made with power up to 20 W, with energy up to 40 joules, and with two different spot sizes. These lesions were compared to lesions made with 1.06 microns radiation from an Nd:YAG laser under identical operating conditions. Measurements of blood-brain barrier damage and width, depth, and volume of tissue affected were obtained 30 minutes after placement of the lesions. It was found that 1.44-microns lesions produced photoevaporative tissue loss at the highest intensities used. The layer of coagulated tissue remaining after photovaporization had a mean thickness of 0.6 mm irrespective of the volume of tissue removed. There was no photovaporization in the 1.06-microns lesions. In addition, the amount of peripheral edema per unit volume of tissue coagulated was approximately half at the 1.44-microns wavelength. These findings suggest that the 1.44-microns Nd:YAG laser may be a useful surgical instrument since it combines the photoevaporative effect of the CO2 laser while maintaining the advantages of the conventional Nd:YAG laser (quartz fiber delivery and effective hemostasis).

Ground state properties and thermoelectric behavior of Ru{sub 2}VZ (Z=Si, ge, sn) half-metallic ferromagnetic full-Heusler compounds

Energy Technology Data Exchange (ETDEWEB)

Yalcin, Battal Gazi

2016-06-15

The ground state properties namely structural, mechanical, electronic and magnetic properties and thermoelectric behavior of Ru{sub 2}VZ (Z=Si, Ge and Sn) half-metallic ferromagnetic full-Heusler compounds are systematically investigated. These compounds are ferromagnetic and crystallize in the Heusler type L2{sub 1} structure (prototype: Cu{sub 2}MnAl, Fm-3m 225). This result is confirmed for Ru{sub 2}VSi and Ru{sub 2}VSn by experimental work reported by Yin and Nash using high temperature direct reaction calorimetry. The studied materials are half-metallic ferromagnets with a narrow direct band gap in the minority spin channel that amounts to 31 meV, 66 meV and 14 meV for Ru{sub 2}VSi, Ru{sub 2}VGe, and Ru{sub 2}VSn, respectively. The total spin magnetic moment (M{sub tot}) of the considered compounds satisfies a Slater–Pauling type rule for localized magnetic moment systems (M{sub tot}=(N{sub V}−24)µ{sub B}), where N{sub V}=25 is the number of valence electrons in the primitive cell. The Curie temperature within the random phase approximation (RPA) is found to be 23 K, 126 K and 447 K for Ru{sub 2}VSi, Ru{sub 2}VGe and Ru{sub 2}VSn, respectively. Semi-classical Boltzmann transport theories have been used to obtain thermoelectric constants, such as Seebeck coefficient (S), electrical (σ/τ) and thermal conductivity (κ/τ), power factor (PF) and the Pauli magnetic susceptibility (χ). ZT{sub MAX} values of 0.016 (350 K), 0.033 (380 K) and 0.063 (315 K) are achieved for Ru{sub 2}VSi, Ru{sub 2}VGe and Ru{sub 2}VSn, respectively. It is expected that the obtained results might be a trigger in future experimentally interest in this type of full-Heusler compounds. - Graphical abstract: Temperature dependence of figure of merit for Ru{sub 2}VZ (Z=Si, Ge, and Sn) compounds. - Highlights: • The ground state and thermoelectric properties are reported for the first time. • Ru{sub 2}VZ are found to be a half-metallic ferromagnetic full Heusler compound. • The

Quantum Mechanical Enhancement of the Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 Micron MOSFETs

Science.gov (United States)

Asenov, Asen; Slavcheva, G.; Brown, A. R.; Davies, J. H.; Saini, Subhash

1999-01-01

A detailed study of the influence of quantum effects in the inversion layer on the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs has been performed. This has been achieved using a full 3D implementation of the density gradient (DG) formalism incorporated in our previously published 3D 'atomistic' simulation approach. This results in a consistent, fully 3D, quantum mechanical picture which implies not only the vertical inversion layer quantisation but also the lateral confinement effects manifested by current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical fluctuations, is an increase in both threshold voltage fluctuations and lowering.

Standing spin-wave mode structure and linewidth in partially disordered hexagonal arrays of perpendicularly magnetized sub-micron Permalloy discs

International Nuclear Information System (INIS)

Ross, N.; Kostylev, M.; Stamps, R. L.

2014-01-01

Standing spin wave mode frequencies and linewidths in partially disordered perpendicular magnetized arrays of sub-micron Permalloy discs are measured using broadband ferromagnetic resonance and compared to analytical results from a single, isolated disc. The measured mode structure qualitatively reproduces the structure expected from the theory. Fitted demagnetizing parameters decrease with increasing array disorder. The frequency difference between the first and second radial modes is found to be higher in the measured array systems than predicted by theory for an isolated disc. The relative frequencies between successive spin wave modes are unaffected by reduction of the long-range ordering of discs in the array. An increase in standing spin wave resonance linewidth at low applied magnetic fields is observed and grows more severe with increased array disorder.

A 32 x 32 capacitive micromachined ultrasonic transducer array manufactured in standard CMOS.

Science.gov (United States)

Lemmerhirt, David F; Cheng, Xiaoyang; White, Robert; Rich, Collin A; Zhang, Man; Fowlkes, J Brian; Kripfgans, Oliver D

2012-07-01

As ultrasound imagers become increasingly portable and lower cost, breakthroughs in transducer technology will be needed to provide high-resolution, real-time 3-D imaging while maintaining the affordability needed for portable systems. This paper presents a 32 x 32 ultrasound array prototype, manufactured using a CMUT-in-CMOS approach whereby ultrasonic transducer elements and readout circuits are integrated on a single chip using a standard integrated circuit manufacturing process in a commercial CMOS foundry. Only blanket wet-etch and sealing steps are added to complete the MEMS devices after the CMOS process. This process typically yields better than 99% working elements per array, with less than ±1.5 dB variation in receive sensitivity among the 1024 individually addressable elements. The CMUT pulseecho frequency response is typically centered at 2.1 MHz with a -6 dB fractional bandwidth of 60%, and elements are arranged on a 250 μm hexagonal grid (less than half-wavelength pitch). Multiplexers and CMOS buffers within the array are used to make on-chip routing manageable, reduce the number of physical output leads, and drive the transducer cable. The array has been interfaced to a commercial imager as well as a set of custom transmit and receive electronics, and volumetric images of nylon fishing line targets have been produced.

Microelectronic test structures for CMOS technology

CERN Document Server

Ketchen, Mark B

2011-01-01

Microelectronic Test Structures for CMOS Technology and Products addresses the basic concepts of the design of test structures for incorporation within test-vehicles, scribe-lines, and CMOS products. The role of test structures in the development and monitoring of CMOS technologies and products has become ever more important with the increased cost and complexity of development and manufacturing. In this timely volume, IBM scientists Manjul Bhushan and Mark Ketchen emphasize high speed characterization techniques for digital CMOS circuit applications and bridging between circuit performance an

Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

CERN Document Server

Wang, T.

2017-01-01

The recent R&D focus on CMOS sensors with charge collection in a depleted zone has opened new perspectives for CMOS sensors as fast and radiation hard pixel devices. These sensors, labelled as depleted CMOS sensors (DMAPS), have already shown promising performance as feasible candidates for the ATLAS Inner Tracker (ITk) upgrade, possibly replacing the current passive sensors. A further step to exploit the potential of DMAPS is to investigate the suitability of equipping the outer layers of the ATLAS ITk upgrade with fully monolithic CMOS sensors. This paper presents the development of a depleted monolithic CMOS pixel sensor designed in the LFoundry 150 nm CMOS technology, with the focus on design details and simulation results.

Half-metallic and insulating natures in Ru-based ordered double perovskite oxides Ba{sub 2}X{sup III}Ru{sup V}O{sub 6} (X = V, Cr) induced by 3d-t{sub 2g}{sup n} orbital filling

Energy Technology Data Exchange (ETDEWEB)

Saad, H.-E.M. Musa, E-mail: musa.1964@gmail.com; Althoyaib, S.S.

2017-04-01

In this paper, we present results of a comprehensive systemic study of the crystal, electronic and magnetic structures on two members of Ru-based ordered double perovskite oxides Ba{sub 2}XRuO{sub 6} (X = V, Cr). For the corporate compound, the analysis of density of states (DOS) results suggests that the 3d-t{sub 2g} orbital filling plays a major role in governing the conduction mechanism in these systems. The DOS and magnetic results show that Ba{sub 2}XRuO{sub 6} exhibits half-metallic (HM) nature as X = V, where the electronic structure of Ba{sub 2}V{sup III}Ru{sup V}O{sub 6} with 3d-t{sub 2g}{sup 2} behaves like that of HM ferrimagnetic (FI), switches to compensate FI insulating behavior as X = Cr, with an extra electron filled 3d-t{sub 2g}{sup 3} in Ba{sub 2}Cr{sup III}Ru{sup V}O{sub 6}. We find, on consideration of electron correlation (LSDA+U) and spin-orbital coupling (SOC) effects that the electronic structure of Ba{sub 2}XRuO{sub 6} takes a HM nature, whereas it is completely transformed to insulating nature once an extra electron filled the 3d-t{sub 2g} orbitals in X = Cr case. Such tuning is accompanied by spin-state hopping of one electron from half-filled spin-state in Ru{sup V} (t{sub 2g}{sup 3} e{sub g}{sup 0}) to two and three occupied spin-state in V{sup III} (t{sub 2g}{sup 2} e{sub g}{sup 0}) and Cr{sup III} (t{sub 2g}{sup 3} e{sub g}{sup 0}), respectively. The charge distribution results show that this extra electron occupies chiefly the spin-down of conduction orbitals and plays a major role in determining the electronic and magnetic structures of Ba{sub 2}XRuO{sub 6} system. - Highlights: • Half-metallic and insulating natures are observed in Ba{sub 2}XRuO{sub 6} (X = V, Cr). • 3d-t{sub 2g}{sup n} orbitals filling plays a major role in governing the conduction mechanism. • LSDA+U method under density functional theory (DFT) is considered. • HM ferrimagnetic (FI) (X = V) switch to compensate FI insulating (X = Cr).

Ferromagnetism and half metallicity induced by oxygen vacancies in the double perovskite BaSrNiWO{sub 6}: DFT study

Energy Technology Data Exchange (ETDEWEB)

Aharbil, Y. [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Labrim, H. [Unité Science de la Matière/DERS/Centre National de l’Energie, des Sciences et des Techniques Nucléaires (CNESTEN), Rabat (Morocco); Benmokhtar, S.; Haddouch, M. Ait [Laboratoire de Chimie Physique des Matériaux LCPM, Faculté des Sciences Ben M' Sik, Casablanca (Morocco); Bahmad, L., E-mail: bahmad@fsr.ac.ma [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco); Belhaj, A. [LIRST, Département de Physique, Faculté Poly-disciplinaire, Université Sultan Moulay Slimane, Béni Mellal (Morocco); Ez-Zahraouy, H.; Benyoussef, A. [Mohammed V University in Rabat, Laboratoire de Magnétisme et Physique des Hautes Energies L.M.P.H.E. URAC-12, B.P. 1014, Rabat (Morocco)

2016-11-01

Using the spin polarized density functional theory (DFT) and exploring the Plane-Wave Self-Consistent Field (PWscf) code implemented in Quantum-ESPRESSO package, we investigate the effect of the Oxygen vacancies (V{sub O}) and the Oxygen interstitial (O{sub i}) on the double perovskite BaSrNiWO{sub 6}. This deals with the magnetic ordering and the electronic structure in such a pure sample exhibiting the insulating anti-ferromagnetic (AFM) state. This study shows that the presence of oxygen deficient defects converts the insulating to half metal with ferromagnetic or anti-ferromagnetic states. The magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell. However, it has been shown that the Oxygen interstitial preserves the anti-ferromagnetic propriety. We have computed the formation energies of different positions of the Oxygen vacancy (V{sub O}) and the Oxygen interstitial (O{sub i}) in the BaSrNiWO{sub 6} compound. We showed that the formation of V{sub O} is easier and vice versa for the O{sub i} formation. The obtained results reveal(V{sub O}) and the Oxygen interstitial (O{sub i}) that the anti-ferromagnetic can be converted to ferromagnetic in the double perovskite BaSrNiWO{sub 6} induced by Oxygen vacancies V{sub O}. - Highlights: • We have studied the ferromagnetism and Half Metallicity in Double Perovskite BaSrNiWO{sub 6}. • We have applied the Ab-inito calculations using the DFT approach. • We showed the effects induced by Oxygen Vacancies and Oxygen interstitial. • We found that the magnetic ordering in BaSrNiWO{sub 6−δ} depends on the position of the Oxygen vacancy in the unit cell.

Dense plasma focus x-ray source for sub-micron lithography

International Nuclear Information System (INIS)

Prasad, R.R.; Krishnan, M.; Mangano, J.; Greene, P.; Qi, Niansheng

1993-01-01

A discharge driven, dense plasma focus in neon is under development at SRL for use as a point x-ray source for sub-micron lithography. This source is presently capable of delivering ∼ 13j/pulse of neon K-shell x-rays (8--14 angstrom) into 4π steradians with 2 kj of electrical energy stored in the capacitor bank charged to 9 kV at a pulse repetition rate of 2 Hz. The discharge is produced by a ≤4 kj, ≤12 kV, capacitor bank circuit, which has a fixed inductance of 12 nH and drives ≤450 kA currents into the DPF load, with ∼1.1 μs rise-times. X-rays are produced when a dense pinch of neon is formed along the axis of the DPF electrodes. A new rail-gap switched capacitor bank and DPF have been built, designed for continuous operation at 2 Hz and burst mode operation at 20 Hz. This paper will present measurements of the x-ray output at a repetition rate of 2 Hz using the new capacitor bank. It will also describe measurements of the spot size (0.3--0.8 mm) and the spectrum (8--14 angstrom) of the DPF source. The dependence of these parameters on the DPF head geometry, bank energy and operating pressure will be discussed. The x-ray output has been measured using filtered pin diodes, x-ray diodes, and absolutely calibrated x-ray crystal spectra. Results from the source operating at 2 Hz will be presented. A novel concept of a windowless beamline has also been developed. The results of preliminary experiments to test the concept will be discussed. At a pulse repetition rate of 20 Hz, this source should produce 200--400 W of x-ray power in the 8-14 angstrom wavelength band, with an input power of 40--60 kW

An examination of the shrinking-core model of sub-micron aluminum combustion

Science.gov (United States)

Buckmaster, John; Jackson, Thomas L.

2013-04-01

We revisit the shrinking-core model of sub-micron aluminum combustion with particular attention to the mass flux balance at the reaction front which necessarily leads to a displacement velocity of the alumina shell surrounding the liquid aluminum. For the planar problem this displacement simply leads to an equal displacement of the entire alumina layer, and therefore a straightforward mathematical framework can be constructed. In this way we are able to construct a single curve which defines the burn time for arbitrary values of the diffusion coefficient of O atoms, the reaction rate, the characteristic length of the combustion field, and the O atom mass concentration within the alumina provided that it is much smaller than the aluminum density. This demonstrates a transition between a 'd 2-t' law for fast chemistry and a 'd-t' law for slow chemistry. For the spherical geometry, the one of physical interest, the outward displacement velocity creates not a simple displacement, but a stress field which, when examined within the framework of linear elasticity, strongly suggests the creation of internal cracking. We note that if the molten aluminum is pushed into these cracks by the high internal pressure characteristic of the stress field, its surface, where reaction occurs, could be fractal in nature and affect the fundamental nature of the burning law. Indeed, if this ingredient is added to the planar model, a single curve for the burn time can again be derived, and this describes a transition from a 'd 2-t' law to a 'd ν-t' law, where 0<ν<1.

X-ray performance of a wafer-scale CMOS flat panel imager for applications in medical imaging and nondestructive testing

Energy Technology Data Exchange (ETDEWEB)

Cha, Bo Kyung, E-mail: goldrain99@kaist.ac.kr [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Jeon, Seongchae [Advanced Medical Device Research Center, Korea Electrotechnology Research Institute, Ansan (Korea, Republic of); Seo, Chang-Woo [Department of Radiological Science, Yonsei University, Gangwon-do 220-710 (Korea, Republic of)

2016-09-21

This paper presents a wafer-scale complementary metal-oxide semiconductor (CMOS)-based X-ray flat panel detector for medical imaging and nondestructive testing applications. In this study, our proposed X-ray CMOS flat panel imager has been fabricated by using a 0.35 µm 1-poly/4-metal CMOS process. The pixel size is 100 µm×100 µm and the pixel array format is 1200×1200 pixels, which provide a field-of-view (FOV) of 120mm×120 mm. The 14.3-bit extended counting analog-to digital converter (ADC) with built-in binning mode was used to reduce the area and simultaneously improve the image resolution. The different screens such as thallium-doped CsI (CsI:Tl) and terbium gadolinium oxysulfide (Gd{sub 2}O{sub 2}S:Tb) scintillators were used as conversion materials for X-rays to visible light photons. The X-ray imaging performance such as X-ray sensitivity as a function of X-ray exposure dose, spatial resolution, image lag and X-ray images of various objects were measured under practical medical and industrial application conditions. This paper results demonstrate that our prototype CMOS-based X-ray flat panel imager has the significant potential for medical imaging and non-destructive testing (NDT) applications with high-resolution and high speed rate.

Prospects for sub-micron solid state nuclear magnetic resonance imaging with low-temperature dynamic nuclear polarization.

Science.gov (United States)

Thurber, Kent R; Tycko, Robert

2010-06-14

We evaluate the feasibility of (1)H nuclear magnetic resonance (NMR) imaging with sub-micron voxel dimensions using a combination of low temperatures and dynamic nuclear polarization (DNP). Experiments are performed on nitroxide-doped glycerol-water at 9.4 T and temperatures below 40 K, using a 30 mW tunable microwave source for DNP. With DNP at 7 K, a 0.5 microL sample yields a (1)H NMR signal-to-noise ratio of 770 in two scans with pulsed spin-lock detection and after 80 db signal attenuation. With reasonable extrapolations, we infer that (1)H NMR signals from 1 microm(3) voxel volumes should be readily detectable, and voxels as small as 0.03 microm(3) may eventually be detectable. Through homonuclear decoupling with a frequency-switched Lee-Goldburg spin echo technique, we obtain 830 Hz (1)H NMR linewidths at low temperatures, implying that pulsed field gradients equal to 0.4 G/d or less would be required during spatial encoding dimensions of an imaging sequence, where d is the resolution in each dimension.

Optoelectronic circuits in nanometer CMOS technology

CERN Document Server

Atef, Mohamed

2016-01-01

This book describes the newest implementations of integrated photodiodes fabricated in nanometer standard CMOS technologies. It also includes the required fundamentals, the state-of-the-art, and the design of high-performance laser drivers, transimpedance amplifiers, equalizers, and limiting amplifiers fabricated in nanometer CMOS technologies. This book shows the newest results for the performance of integrated optical receivers, laser drivers, modulator drivers and optical sensors in nanometer standard CMOS technologies. Nanometer CMOS technologies rapidly advanced, enabling the implementation of integrated optical receivers for high data rates of several Giga-bits per second and of high-pixel count optical imagers and sensors. In particular, low cost silicon CMOS optoelectronic integrated circuits became very attractive because they can be extensively applied to short-distance optical communications, such as local area network, chip-to-chip and board-to-board interconnects as well as to imaging and medical...

Determinants of the half-turn with the ball in sub-elite youth soccer players.

Science.gov (United States)

Zago, Matteo; Codari, Marina; Grilli, Massimo; Bellistri, Giuseppe; Lovecchio, Nicola; Sforza, Chiarella

2016-06-01

We explored the biomechanics of the 180° change-of-direction with the ball (half-turn) in soccer. We aimed at identifying movement strategies which enhance the players' half-turning performance, by characterising technique kinematics and understanding the structure of biomechanical and anthropometrics variables. Ten Under-13 sub-elite male players were recorded with an optoelectronic motion analyser while performing a 5-m straight dribbling followed by a half-turn with the sole. Joints kinematics differences between faster and slower trials were found in support-side hip rotation, driving-side hip adduction, trunk flexion and rotation, and arms abduction. To unveil the data-set structure, a principal component (PC) analysis and a stepwise linear discriminant analysis were performed using 30 biomechanical parameters and four anthropometric variables for each trial. Seven retained PCs explained 79% of the overall variability, featuring combinations of original variables that help in understanding the factors facilitating fast half-turns: keeping short steps, minimising lateral and forward body movements, and centre-of-mass lowering, even with ample lower limbs ranges of motion (RoM); abducting the upper limbs while limiting trunk flexion and pelvic inclination RoM. Balance and task-constrained exercises may be proposed to improve this technique. Moreover, a quantitative knowledge of the movement structure could give coaches objective insights to better instruct young players.

Electrical Interconnections Through CMOS Wafers

DEFF Research Database (Denmark)

Rasmussen, Frank Engel

2003-01-01

Chips with integrated vias are currently the ultimate miniaturizing solution for 3D packaging of microsystems. Previously the application of vias has almost exclusively been demonstrated within MEMS technology, and only a few of these via technologies have been CMOS compatible. This thesis...... describes the development of vias through a silicon wafer containing Complementary Metal-Oxide Semiconductor (CMOS) circuitry. Two via technologies have been developed and fabricated in blank silicon wafers; one based on KOH etching of wafer through-holes and one based on DRIE of wafer through......-holes. The most promising of these technologies --- the DRIE based process --- has been implemented in CMOS wafers containing hearing aid amplifiers. The main challenges in the development of a CMOS compatible via process depend on the chosen process for etching of wafer through-holes. In the case of KOH etching...

CMOS test and evaluation a physical perspective

CERN Document Server

Bhushan, Manjul

2015-01-01

This book extends test structure applications described in Microelectronic Test Struc­tures for CMOS Technology (Springer 2011) to digital CMOS product chips. Intended for engineering students and professionals, this book provides a single comprehensive source for evaluating CMOS technology and product test data from a basic knowledge of the physical behavior of the constituent components. Elementary circuits that exhibit key properties of complex CMOS chips are simulated and analyzed, and an integrated view of design, test and characterization is developed. Appropriately designed circuit monitors embedded in the CMOS chip serve to correlate CMOS technology models and circuit design tools to the hardware and also aid in test debug. Impact of silicon process variability, reliability, and power and performance sensitivities to a range of product application conditions are described. Circuit simulations exemplify the methodologies presented, and problems are included at the end of the chapters.

Absorbed dose by a CMOS in radiotherapy

International Nuclear Information System (INIS)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L. C.

2011-10-01

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Neutron absorbed dose in a pacemaker CMOS

International Nuclear Information System (INIS)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R.; Paredes G, L.

2012-01-01

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10 -17 Gy per neutron emitted by the source. (Author)

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: fermineutron@yahoo.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2012-06-15

The neutron spectrum and the absorbed dose in a Complementary Metal Oxide Semiconductor (CMOS), has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes an oncology patient that must be treated in a linear accelerator. Pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. Above 7 MV therapeutic beam is contaminated with photoneutrons that could damage the CMOS. Here, the neutron spectrum and the absorbed dose in a CMOS cell was calculated, also the spectra were calculated in two point-like detectors in the room. Neutron spectrum in the CMOS cell shows a small peak between 0.1 to 1 MeV and a larger peak in the thermal region, joined by epithermal neutrons, same features were observed in the point-like detectors. The absorbed dose in the CMOS was 1.522 x 10{sup -17} Gy per neutron emitted by the source. (Author)

On the sub-micron aerosol size distribution in a coastal-rural site at El Arenosillo Station (SW – Spain

Directory of Open Access Journals (Sweden)

M. Sorribas

2011-11-01

Full Text Available This study focuses on the analysis of the sub-micron aerosol characteristics at El Arenosillo Station, a rural and coastal environment in South-western Spain between 1 August 2004 and 31 July 2006 (594 days. The mean total concentration (N<sub>T> was 8660 cm⁻³ and the mean concentrations in the nucleation (N<sub>NUC>, Aitken (N<sub>AIT> and accumulation (N<sub>ACC> particle size ranges were 2830 cm⁻³, 4110 cm⁻³ and 1720 cm⁻³, respectively. Median size distribution was characterised by a single-modal fit, with a geometric diameter, median number concentration and geometric standard deviation of 60 nm, 5390 cm⁻³ and 2.31, respectively. Characterisation of primary emissions, secondary particle formation, changes to meteorology and long-term transport has been necessary to understand the seasonal and annual variability of the total and modal particle concentration. Number concentrations exhibited a diurnal pattern with maximum concentrations around noon. This was governed by the concentrations of the nucleation and Aitken modes during the warm seasons and only by the nucleation mode during the cold seasons. Similar monthly mean total concentrations were observed throughout the year due to a clear inverse variation between the monthly mean N<sub>NUC> and N<sub>ACC>. It was related to the impact of desert dust and continental air masses on the monthly mean particle levels. These air masses were associated with high values of N<sub>ACC> which suppressed the new particle formation (decreasing N<sub>NUC>. Each day was classified according to a land breeze flow or a synoptic pattern influence. The median size distribution for desert dust and continental aerosol was dominated by the Aitken and accumulation modes, and marine air masses were dominated by the nucleation and Aitken modes. Particles

Forecasting noise and radiation hardness of CMOS front-end electronics beyond the 100 nm frontier

International Nuclear Information System (INIS)

Re, V.; Gaioni, L.; Manghisoni, M.; Ratti, L.; Traversi, G.

2010-01-01

The progress of industrial microelectronic technologies has already overtaken the 130 nm CMOS generation that is currently the focus of IC designers for new front-end chips in LHC upgrades and other detector applications. In a broader time span, sub-100 nm CMOS processes may become appealing for the design of very compact front-end systems with advanced integrated functionalities. This is especially true in the case of pixel detectors, both for monolithic devices (MAPS) and for hybrid implementations where a high resistivity sensor is connected to a CMOS readout chip. Technologies beyond the 100 nm frontier have peculiar features, such as the evolution of the device gate material to reduce tunneling currents through the thin dielectric. These new physical device parameters may impact on functional properties such as noise and radiation hardness. On the basis of experimental data relevant to commercial devices, this work studies potential advantages and challenges associated to the design of low-noise and rad-hard analog circuits in these aggressively scaled technologies.

Absorbed dose by a CMOS in radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Valero L, C. Y.; Guzman G, K. A.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L. C., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-10-15

Absorbed dose by a complementary metal oxide semiconductor (CMOS) circuit as part of a pacemaker, has been estimated using Monte Carlo calculations. For a cancer patient who is a pacemaker carrier, scattered radiation could damage pacemaker CMOS circuits affecting patient's health. Absorbed dose in CMOS circuit due to scattered photons is too small and therefore is not the cause of failures in pacemakers, but neutron calculations shown an absorbed dose that could cause damage in CMOS due to neutron-hydrogen interactions. (Author)

Wideband CMOS receivers

CERN Document Server

Oliveira, Luis

2015-01-01

This book demonstrates how to design a wideband receiver operating in current mode, in which the noise and non-linearity are reduced, implemented in a low cost single chip, using standard CMOS technology.  The authors present a solution to remove the transimpedance amplifier (TIA) block and connect directly the mixer’s output to a passive second-order continuous-time Σ∆ analog to digital converter (ADC), which operates in current-mode. These techniques enable the reduction of area, power consumption, and cost in modern CMOS receivers.

Recent developments on CMOS MAPS for the SuperB Silicon Vertex Tracker

Energy Technology Data Exchange (ETDEWEB)

Rizzo, G., E-mail: rizzo@pi.infn.it [Università degli Studi di Pisa (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pisa (Italy); Comott, D. [Università degli Studi di Bergamo (Italy); Manghisoni, M.; Re, V.; Traversi, G. [Università degli Studi di Bergamo (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Pavia (Italy); Fabbri, L.; Gabrielli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Giorgi, F.; Pellegrini, G.; Sbarra, C. [Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Semprini-Cesari, N.; Valentinetti, S.; Villa, M.; Zoccoli, A. [Università degli Studi di Bologna (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Bologna (Italy); Berra, A.; Lietti, D.; Prest, M. [Università dell' Insubria, Como (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Milano Bicocca (Italy); Bevan, A. [School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); Wilson, F. [STFC, Rutherford Appleton Laboratory, Harwell Oxford, Didcot OX11 0QX (United Kingdom); Beck, G. [School of Physics and Astronomy, Queen Mary, University of London, London E1 4NS (United Kingdom); and others

2013-08-01

In the design of the Silicon Vertex Tracker for the high luminosity SuperB collider, very challenging requirements are set by physics and background conditions on its innermost Layer0: small radius (about 1.5 cm), resolution of 10–15μm in both coordinates, low material budget <1%X{sub 0}, and the ability to withstand a background hit rate of several tens of MHz/cm{sup 2}. Thanks to an intense R and D program the development of Deep NWell CMOS MAPS (with the ST Microelectronics 130 nm process) has reached a good level of maturity and allowed for the first time the implementation of thin CMOS sensors with similar functionalities as in hybrid pixels, such as pixel-level sparsification and fast time stamping. Further MAPS performance improvements are currently under investigation with two different approaches: the INMAPS CMOS process, featuring a quadruple well and a high resistivity substrate, and 3D CMOS MAPS, realized with vertical integration technology. In both cases specific features of the processes chosen can improve charge collection efficiency, with respect to a standard DNW MAPS design, and allow to implement a more complex in-pixel logic in order to develop a faster readout architecture. Prototypes of MAPS matrix, suitable for application in the SuperB Layer0, have been realized with the INMAPS 180 nm process and the 130 nm Chartered/Tezzaron 3D process and results of their characterization will be presented in this paper.

A low-power CMOS smart temperature sensor for RFID application

International Nuclear Information System (INIS)

Xie Liangbo; Liu Jiaxin; Wang Yao; Wen Guangjun

2014-01-01

This paper presents the design and implement of a CMOS smart temperature sensor, which consists of a low power analog front-end and a 12-bit low-power successive approximation register (SAR) analog-to-digital converter (ADC). The analog front-end generates a proportional-to-absolute-temperature (PTAT) voltage with MOSFET circuits operating in the sub-threshold region. A reference voltage is also generated and optimized in order to minimize the temperature error and the 12-bit SAR ADC is used to digitize the PTAT voltage. Using 0.18 μm CMOS technology, measurement results show that the temperature error is −0.69/+0.85 °C after one-point calibration over a temperature range of −40 to 100 °C. Under a conversion speed of 1K samples/s, the power consumption is only 2.02 μW while the chip area is 230 × 225 μm 2 , and it is suitable for RFID application. (semiconductor integrated circuits)

EUV actinic defect inspection and defect printability at the sub-32 nm half pitch

Energy Technology Data Exchange (ETDEWEB)

Huh, Sungmin; Kearney, Patrick; Wurm, Stefan; Goodwin, Frank; Han, Hakseung; Goldberg, Kenneth; Mochi, Iacopp; Gullikson, Eric M.

2009-08-01

Extreme ultraviolet (EUV) mask blanks with embedded phase defects were inspected with a reticle actinic inspection tool (AIT) and the Lasertec M7360. The Lasertec M7360, operated at SEMA TECH's Mask Blank Development Center (MBDC) in Albany, NY, has a sensitivity to multilayer defects down to 40-45 nm, which is not likely sufficient for mask blank development below the 32 nm half-pitch node. Phase defect printability was simulated to calculate the required defect sensitivity for a next generation blank inspection tool to support reticle development for the sub-32 nm half-pitch technology node. Defect mitigation technology is proposed to take advantage of mask blanks with some defects. This technology will reduce the cost of ownership of EUV mask blanks. This paper will also discuss the kind of infrastructure that will be required for the development and mass production stages.

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Distributed CMOS Bidirectional Amplifiers Broadbanding and Linearization Techniques

CERN Document Server

El-Khatib, Ziad; Mahmoud, Samy A

2012-01-01

This book describes methods to design distributed amplifiers useful for performing circuit functions such as duplexing, paraphrase amplification, phase shifting power splitting and power combiner applications.  A CMOS bidirectional distributed amplifier is presented that combines for the first time device-level with circuit-level linearization, suppressing the third-order intermodulation distortion. It is implemented in 0.13μm RF CMOS technology for use in highly linear, low-cost UWB Radio-over-Fiber communication systems. Describes CMOS distributed amplifiers for optoelectronic applications such as Radio-over-Fiber systems, base station transceivers and picocells; Presents most recent techniques for linearization of CMOS distributed amplifiers; Includes coverage of CMOS I-V transconductors, as well as CMOS on-chip inductor integration and modeling; Includes circuit applications for UWB Radio-over-Fiber networks.

Stability of charge and orbital order in half-doped Y{sub 0.5}Ca{sub 0.5}MnO{sub 3} nanocrystallites

Energy Technology Data Exchange (ETDEWEB)

Chowdhury, Putul Malla, E-mail: putularun@gmail.com; Ghosh, Barnali, E-mail: barnali@bose.res.in; Raychaudhuri, A. K., E-mail: arup@bose.res.in [S N Bose National Centre for Basic Sciences, Unit for Nano Science, Department of Condensed Matter Physics and Materials Science (India); Kaushik, S. D.; Siruguri, V. [UGC-DAE Consortium for Scientific Research Mumbai Centre, R-5 Shed, Bhabha Atomic Research Centre (India)

2013-04-15

In this paper, we report a detailed study of the structure, magnetic, and electrical transport properties in nanocrystallites of hole-doped manganite Y{sub 0.5}Ca{sub 0.5}MnO{sub 3}, with the aim to study the effect of size reduction on the stability of the charge-orbital order and the antiferromagnetic spin order that are seen in the bulk samples of the half-doped manganite. The investigations have been done in the general context of investigating how size reduction affects competing interactions in complex oxides and thus, changes their ground state. The bulk sample of the material (average crystallite size {approx}1 {mu}m), with the smallest radius of the cation in A-site (Y), shows a robust charge and orbital ordered insulating state below the transition temperature near 290 K and an antiferromagnetic spin order at 110 K. The experiments carried out on well-characterized nanocrystalline samples, with average crystallite sizes down to 75 nm, establish that the size reduction changes the structural parameters, and the charge and orbital ordering are suppressed. However, the antiferromagnetic spin order (as revealed by neutron diffraction experiments carried out down to 2 K) persists in the nanocrystallites and co-exists with ferromagnetic order below 110 K. The nanocrystalline samples have significant lower resistivities (by few orders) compared to those of the bulk samples in the temperature range 10-300 K. This corroborates the formation of the ferromagnetic moments in the nanocrystallites.

A CMOS Morlet Wavelet Generator

Directory of Open Access Journals (Sweden)

A. I. Bautista-Castillo

2017-04-01

Full Text Available The design and characterization of a CMOS circuit for Morlet wavelet generation is introduced. With the proposed Morlet wavelet circuit, it is possible to reach a~low power consumption, improve standard deviation (σ control and also have a small form factor. A prototype in a double poly, three metal layers, 0.5 µm CMOS process from MOSIS foundry was carried out in order to verify the functionality of the proposal. However, the design methodology can be extended to different CMOS processes. According to the performance exhibited by the circuit, may be useful in many different signal processing tasks such as nonlinear time-variant systems.

CMOS image sensors: State-of-the-art

Science.gov (United States)

Theuwissen, Albert J. P.

2008-09-01

This paper gives an overview of the state-of-the-art of CMOS image sensors. The main focus is put on the shrinkage of the pixels : what is the effect on the performance characteristics of the imagers and on the various physical parameters of the camera ? How is the CMOS pixel architecture optimized to cope with the negative performance effects of the ever-shrinking pixel size ? On the other hand, the smaller dimensions in CMOS technology allow further integration on column level and even on pixel level. This will make CMOS imagers even smarter that they are already.

All-CMOS night vision viewer with integrated microdisplay

Science.gov (United States)

Goosen, Marius E.; Venter, Petrus J.; du Plessis, Monuko; Faure, Nicolaas M.; Janse van Rensburg, Christo; Rademeyer, Pieter

2014-02-01

The unrivalled integration potential of CMOS has made it the dominant technology for digital integrated circuits. With the advent of visible light emission from silicon through hot carrier electroluminescence, several applications arose, all of which rely upon the advantages of mature CMOS technologies for a competitive edge in a very active and attractive market. In this paper we present a low-cost night vision viewer which employs only standard CMOS technologies. A commercial CMOS imager is utilized for near infrared image capturing with a 128x96 pixel all-CMOS microdisplay implemented to convey the image to the user. The display is implemented in a standard 0.35 μm CMOS process, with no process alterations or post processing. The display features a 25 μm pixel pitch and a 3.2 mm x 2.4 mm active area, which through magnification presents the virtual image to the user equivalent of a 19-inch display viewed from a distance of 3 meters. This work represents the first application of a CMOS microdisplay in a low-cost consumer product.

Scalability of Ferroelectric Tunnel Junctions to Sub-100 nm Dimensions

Science.gov (United States)

Abuwasib, Mohammad

The ferroelectric tunnel junction (FTJ) is an emerging low-power device that has potential application as a non-volatile memory and logic element in beyond-CMOS circuits. As a beyond- CMOS device, it is necessary to investigate the device scaling limit of FTJs to sub-50 nm dimensions. In addition to the fabrication of scaled FTJs, the integration challenges and CMOS compatibility of the device needs to be addressed. FTJ device performance including ON/OFF ratio, memory retention time, switching endurance, write /read speed and power dissipation need to be characterized for benchmarking of this emerging device, compared to its charge-based counterparts such as DRAM, NAND/NOR flash, as well as to other emerging memory devices. In this dissertation, a detailed investigation of scaling of BaTiO3 (BTO) based FTJs was performed, from full-scale integration to electrical characterization. Two types of FTJs with La0.67Sr0.33MnO3 (LSMO) and SrRuO3 (SRO) bottom electrodes were investigated in this work namely; Co/BTO/LSMO and Co/BTO/SRO. A CMOS compatible fabrication process for integration of Co/BTO/LSMO FTJ devices ( 3x3 microm 2) was demonstrated for the first time using standard photolithography and self-aligned RIE technique. The fabricated FTJ device showed switching behavior, however, degradation of the LSMO contact was observed during the fabrication process. A detailed investigation of the contact properties of bottom electrode materials (LSMO, SRO) for BTO-based FTJs was performed. The process and thermal stability of different contact overlayers (Ti, Pt) was explained to understand the nature of the ohmic contacts for metal to SRO and LSMO layers. Noble metals-to-SRO was found to form the most stable contacts for FTJs. Based on this study, a systematic scalability study of Co/BTO/SRO FTJs was carried out from micron ( 3x3 microm2) to submicron ( 200x200 nm2) dimensions. Positive UP Negative Down (PUND) measurement confirms the ferroelectric properties of the BTO

Optical readout of a triple-GEM detector by means of a CMOS sensor

Energy Technology Data Exchange (ETDEWEB)

Marafini, M. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Patera, V. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); Pinci, D., E-mail: davide.pinci@roma1.infn.it [INFN Sezione di Roma (Italy); Sarti, A. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy); Dipartimento di Scienze di Base e Applicate per Ingegneria, Sapienza Università di Roma (Italy); Sciubba, A. [INFN Sezione di Roma (Italy); Museo Storico della Fisica e Centro Studi e Ricerche “E. Fermi”, Roma (Italy); Dipartimento di Scienze di Base e Applicate per Ingegneria, Sapienza Università di Roma (Italy); Spiriti, E. [Laboratori Nazionali di Frascati dell' INFN, Frascati (Italy)

2016-07-11

In last years, the development of optical sensors has produced objects able to provide very interesting performance. Large granularity is offered along with a very high sensitivity. CMOS sensors with millions of pixels able to detect as few as two or three photons per pixel are commercially available and can be used to read-out the optical signals provided by tracking particle detectors. In this work the results obtained by optically reading-out a triple-GEM detector by a commercial CMOS sensor will be presented. A standard detector was assembled with a transparent window below the third GEM allowing the light to get out. The detector is supplied with an Ar/CF{sub 4} based gas mixture producing 650 nm wavelength photons matching the maximum quantum efficiency of the sensor.

On drift fields in CMOS monolithic active pixel sensors

Energy Technology Data Exchange (ETDEWEB)

Deveaux, Michael [Goethe-Universitaet, Frankfurt (Germany); Collaboration: CBM-MVD-Collaboration

2016-07-01

CMOS Monolithic Active Pixel Sensors (MAPS) combine an excellent spatial resolution of few μm with a very low material budget of 0.05% X{sub 0}. To extend their radiation tolerance to the level needed for future experiments like e.g. CBM, it is regularly considered to deplete their active volume. We discuss the limits of this strategy accounting for the specific features of the sensing elements of MAPS. Moreover, we introduce an alternative approach to generate the drift fields needed to provoke a faster charge collection by means of doping gradients.

Time-specific measurements of energy deposition from radiation fields in simulated sub-micron tissue volumes

International Nuclear Information System (INIS)

Famiano, M.A.

1997-01-01

A tissue-equivalent spherical proportional counter is used with a modified amplifier system to measure specific energy deposited from a uniform radiation field for short periods of time (∼1 micros to seconds) in order to extrapolate to dose in sub-micron tissue volumes. The energy deposited during these time intervals is compared to biological repair processes occurring within the same intervals after the initial energy deposition. The signal is integrated over a variable collection time which is adjusted with a square-wave pulse. Charge from particle passages is collected on the anode during the period in which the integrator is triggered, and the signal decays quickly to zero after the integrator feedback switch resets; the process repeats for every triggering pulse. Measurements of energy deposited from x rays, 137 Cs gamma rays, and electrons from a 90 Sr/ 90 Y source for various time intervals are taken. Spectral characteristics as a function of charge collection time are observed and frequency plots of specific energy and collection time-interval are presented. In addition, a threshold energy flux is selected for each radiation type at which the formation of radicals (based on current measurements) in mammalian cells equals the rate at which radicals are repaired

Exploitation of sub-micron cavitation nuclei to enhance ultrasound-mediated transdermal transport and penetration of vaccines.

Science.gov (United States)

Bhatnagar, Sunali; Kwan, James J; Shah, Apurva R; Coussios, Constantin-C; Carlisle, Robert C

2016-09-28

Inertial cavitation mediated by ultrasound has been previously shown to enable skin permeabilisation for transdermal drug and vaccine delivery, by sequentially applying the ultrasound then the therapeutic in liquid form on the skin surface. Using a novel hydrogel dosage form, we demonstrate that the use of sub-micron gas-stabilising polymeric nanoparticles (nanocups) to sustain and promote cavitation activity during simultaneous application of both drug and vaccine results in a significant enhancement of both the dose and penetration of a model vaccine, Ovalbumin (OVA), to depths of 500μm into porcine skin. The nanocups themselves exceeded the penetration depth of the vaccine (up to 700μm) due to their small size and capacity to 'self-propel'. In vivo murine studies indicated that nanocup-assisted ultrasound transdermal vaccination achieved significantly (pultrasound-assisted vaccine delivery in the presence of nanocups demonstrated substantially higher specific anti-OVA IgG antibody levels compared to other transdermal methods. Further optimisation can lead to a viable, safe and non-invasive delivery platform for vaccines with potential use in a primary care setting or personalized self-vaccination at home. Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.

Half-life determination of T{sub z} = -1 and T{sub z} = -(1)/(2) proton-rich nuclei and the β decay of {sup 58}Zn

Energy Technology Data Exchange (ETDEWEB)

Kucuk, L.; Oktem, Y.; Cakirli, R.B.; Ganioglu, E.; Susoy, G. [Istanbul University, Department of Physics, Istanbul (Turkey); Orrigo, S.E.A.; Montaner-Piza, A.; Rubio, B. [CSIC-Universidad de Valencia, Instituto de Fisica Corpuscular, Valencia (Spain); Fujita, Y. [Osaka University, Department of Physics, Toyonaka, Osaka (Japan); Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Gelletly, W. [CSIC-Universidad de Valencia, Instituto de Fisica Corpuscular, Valencia (Spain); University of Surrey, Department of Physics, Guildford, Surrey (United Kingdom); Blank, B.; Ascher, P.; Giovinazzo, J.; Grevy, S. [Centre d' Etudes Nucleaires de Bordeaux Gradignan, CNRS/IN2P3 - Universite de Bordeaux, Gradignan (France); Adachi, T.; Fujita, H.; Tamii, A. [Osaka University, Research Center for Nuclear Physics, Ibaraki, Osaka (Japan); Algora, A. [CSIC-Universidad de Valencia, Instituto de Fisica Corpuscular, Valencia (Spain); Inst. of Nuclear Research of the Hung. Acad. of Sciences, Debrecen (Hungary); France, G. de; Oliveira Santos, F. de; Thomas, J.C. [Grand Accelerateur National d' Ions Lourds (GANIL), CEA/DRF-CNRS/IN2P3, Caen (France); Marques, F.M. [Laboratoire de Physique Corpusculaire de Caen, ENSICAEN, UNICAEN, IN2P3/CNRS, Caen (France); Molina, F. [CSIC-Universidad de Valencia, Instituto de Fisica Corpuscular, Valencia (Spain); Comision Chilena de Energia Nuclear, Casilla 188-D, Santiago (Chile); Perrot, L. [IPN Orsay, Orsay (France); Raabe, R. [Grand Accelerateur National d' Ions Lourds (GANIL), CEA/DRF-CNRS/IN2P3, Caen (France); KU Leuven, Instituut voor Kern- en Stralingsfysica, Leuven (Belgium); Srivastava, P.C. [Grand Accelerateur National d' Ions Lourds (GANIL), CEA/DRF-CNRS/IN2P3, Caen (France); Indian Institute of Technology, Department of Physics, Roorkee (India)

2017-06-15

We have measured the β-decay half-lives of 16 neutron-deficient nuclei with T{sub z} = -1/2 and -1, ranging from chromium to germanium. They were produced in an experiment carried out at GANIL and optimized for the production of {sup 58}Zn, for which in addition we present the decay scheme and absolute Fermi and Gamow-Teller transition strengths. Since all of these nuclei lie on the rp-process pathway, the T{sub 1/2} values are important ingredients for the rp-process reaction flow calculations and for models of X-ray bursters. (orig.)

Engineering of mixed pairing and non-Abelian Majorana states in chiral p-wave superconductor Sr<sub>2sub>RuO>4sub> and other materials

Energy Technology Data Exchange (ETDEWEB)

Liu, Ying [Pennsylvania State Univ., University Park, PA (United States). Dept. of Physics

2015-11-30

This project deals with odd-parity superconductor Sr<sub>2sub>RuO>4sub> and related material systems, aiming at understanding the unconventional nature of superconductivity in this material. An odd-parity superconductor is expected to feature a novel topological object, the half-flux-quantum vortex that hosts a Majorana anyons. Majorana anyons carry non-Abelian statistics that can be used as the building block for constructing a fault-tolerated topological quantum computer. Half-flux-quantum vortices form in an odd-parity superconductor because of the availability of charge neutral spin supercurrent in addition to the normal supercurrent. Half-height magnetization steps were found in a cantilever magnetometry measurement of doubly connected mesoscopic samples of Sr<sub>2sub>RuO>4sub> in the presence of an in-plane magnetic field (J. Jang, D. G. Ferguson, V. Vakaryuk, R. Budakian, S. B. Chung, P. M. Goldbart, and Y. Maeno, Science 331, 186 (2011)), which suggests the presence of a half-flux-quantum (Φ<sub>0sub>/2 = h/4e) state. Evidence for half flux quantum states, which can be viewed as coreless half vortices, was obtained in mesoscopic samples of Sr<sub>2sub>RuO>4sub> in the torque magnetomitry measurements. However, the existence of such an important property has not been confirmed by any other independent measurement.

Beyond CMOS nanodevices 1

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students.  It particularly focuses on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications

Beyond CMOS nanodevices 2

CERN Document Server

Balestra, Francis

2014-01-01

This book offers a comprehensive review of the state-of-the-art in innovative Beyond-CMOS nanodevices for developing novel functionalities, logic and memories dedicated to researchers, engineers and students. The book will particularly focus on the interest of nanostructures and nanodevices (nanowires, small slope switches, 2D layers, nanostructured materials, etc.) for advanced More than Moore (RF-nanosensors-energy harvesters, on-chip electronic cooling, etc.) and Beyond-CMOS logic and memories applications.

Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

Science.gov (United States)

Zhang, Liping; Sawchuk, Alexander A.

2001-12-01

We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

Sub-micron indent induced plastic deformation in copper and irradiated steel

International Nuclear Information System (INIS)

Robertson, Ch.

1998-09-01

In this work we aim to study the indent induced plastic deformation. For this purpose, we have developed a new approach, whereby the indentation curves provides the mechanical behaviour, while the deformation mechanisms are observed thanks to Transmission Electron Microscopy (TEM). In order to better understand how an indent induced dislocation microstructure forms, numerical modeling of the indentation process at the scale of discrete dislocations has been worked out as well. Validation of this modeling has been performed through direct comparison of the computed microstructures with TEM micrographs of actual indents in pure Cu [001]. Irradiation induced modifications of mechanical behaviour of ion irradiated 316L have been investigated, thanks to the mentioned approach. An important hardening effect was reported from indentation data (about 50%), on helium irradiated 316L steel. TEM observations of the damage zone clearly show that this behaviour is associated with the presence of He bubbles. TEM observations of the indent induced plastic zone also showed that the extent of the plastic zone is strongly correlated with hardness, that is to say: harder materials gets a smaller plastic zone. These results thus clearly established that the selected procedure can reveal any irradiation induced hardening in sub-micron thick ion irradiated layers. The behaviour of krypton irradiated 316L steel is somewhat more puzzling. In one hand indeed, a strong correlation between the defect cluster size and densities on the irradiation temperature is observed in the 350 deg C -600 deg C range, thanks to TEM observations of the damage zone. On the other hand, irradiation induced hardening reported from indentation data is relatively small (about 10%) and shows no dependence upon the irradiation temperature (within the mentioned range). In addition, it has been shown that the reported hardening vanishes following appropriate post-irradiation annealing, although most of the TEM

Design optimization of radiation-hardened CMOS integrated circuits

International Nuclear Information System (INIS)

1975-01-01

Ionizing-radiation-induced threshold voltage shifts in CMOS integrated circuits will drastically degrade circuit performance unless the design parameters related to the fabrication process are properly chosen. To formulate an approach to CMOS design optimization, experimentally observed analytical relationships showing strong dependences between threshold voltage shifts and silicon dioxide thickness are utilized. These measurements were made using radiation-hardened aluminum-gate CMOS inverter circuits and have been corroborated by independent data taken from MOS capacitor structures. Knowledge of these relationships allows one to define ranges of acceptable CMOS design parameters based upon radiation-hardening capabilities and post-irradiation performance specifications. Furthermore, they permit actual design optimization of CMOS integrated circuits which results in optimum pre- and post-irradiation performance with respect to speed, noise margins, and quiescent power consumption. Theoretical and experimental results of these procedures, the applications of which can mean the difference between failure and success of a CMOS integrated circuit in a radiation environment, are presented

Poly-SiGe for MEMS-above-CMOS sensors

CERN Document Server

Gonzalez Ruiz, Pilar; Witvrouw, Ann

2014-01-01

Polycrystalline SiGe has emerged as a promising MEMS (Microelectromechanical Systems) structural material since it provides the desired mechanical properties at lower temperatures compared to poly-Si, allowing the direct post-processing on top of CMOS. This CMOS-MEMS monolithic integration can lead to more compact MEMS with improved performance. The potential of poly-SiGe for MEMS above-aluminum-backend CMOS integration has already been demonstrated. However, aggressive interconnect scaling has led to the replacement of the traditional aluminum metallization by copper (Cu) metallization, due to its lower resistivity and improved reliability. Poly-SiGe for MEMS-above-CMOS sensors demonstrates the compatibility of poly-SiGe with post-processing above the advanced CMOS technology nodes through the successful fabrication of an integrated poly-SiGe piezoresistive pressure sensor, directly fabricated above 0.13 m Cu-backend CMOS. Furthermore, this book presents the first detailed investigation on the influence o...

CMOS dot matrix microdisplay

Science.gov (United States)

Venter, Petrus J.; Bogalecki, Alfons W.; du Plessis, Monuko; Goosen, Marius E.; Nell, Ilse J.; Rademeyer, P.

2011-03-01

Display technologies always seem to find a wide range of interesting applications. As devices develop towards miniaturization, niche applications for small displays may emerge. While OLEDs and LCDs dominate the market for small displays, they have some shortcomings as relatively expensive technologies. Although CMOS is certainly not the dominating semiconductor for photonics, its widespread use, favourable cost and robustness present an attractive potential if it could find application in the microdisplay environment. Advances in improving the quantum efficiency of avalanche electroluminescence and the favourable spectral characteristics of light generated through the said mechanism may afford CMOS the possibility to be used as a display technology. This work shows that it is possible to integrate a fully functional display in a completely standard CMOS technology mainly geared towards digital design while using light sources completely compatible with the process and without any post processing required.

Mini-Conference on the First Microns of the First Wall

Energy Technology Data Exchange (ETDEWEB)

Stotler, D. P.; Rognlien, T. D.; Krasheninnikov, S. I.

2008-03-20

Interactions between plasmas and their surrounding materials (plasma facing components) are of great interest to present and future magnetic fusion experiments, and ITER [ITER Physics Basis Editors, ITER Physics Exper Group Chairs, ITER Joint Central Team, and Physics Inte gration Unit, Nucl. Fusion 39, 2137 (1999)] in particular. This interest is the result of concerns with the survivability of these materials, as well as the impact of these interactions back on the plasma. These interactions begin on the surface, but can have consequences a few microns into the material.This mini-conference on these "first microns" was designed to bring to the Division of Plasma Physics Meeting experts on these topics who would otherwise not attend. At the same time, the mini-conference was intended to expose the broader fusion community to these issues. The mini-conference covered in three, half-day sessions the topics of lithium coatings and surfaces, mixed materials characteristics, and issues associated with graphite.

Mini-Conference on the First Microns of the First Wall

International Nuclear Information System (INIS)

Stotler, D.P.; Rognlien, T.D.; Krasheninnikov, S.I.

2008-01-01

Interactions between plasmas and their surrounding materials (plasma facing components) are of great interest to present and future magnetic fusion experiments, and ITER (ITER Physics Basis Editors, ITER Physics Exper Group Chairs, ITER Joint Central Team, and Physics Integration Unit, Nucl. Fusion 39, 2137 (1999)) in particular. This interest is the result of concerns with the survivability of these materials, as well as the impact of these interactions back on the plasma. These interactions begin on the surface, but can have consequences a few microns into the material. This mini-conference on these 'first microns' was designed to bring to the Division of Plasma Physics Meeting experts on these topics who would otherwise not attend. At the same time, the mini-conference was intended to expose the broader fusion community to these issues. The mini-conference covered in three, half-day sessions the topics of lithium coatings and surfaces, mixed materials characteristics, and issues associated with graphite

Spoked-ring microcavities: enabling seamless integration of nanophotonics in unmodified advanced CMOS microelectronics chips

Science.gov (United States)

Wade, Mark T.; Shainline, Jeffrey M.; Orcutt, Jason S.; Ram, Rajeev J.; Stojanovic, Vladimir; Popovic, Milos A.

2014-03-01

We present the spoked-ring microcavity, a nanophotonic building block enabling energy-efficient, active photonics in unmodified, advanced CMOS microelectronics processes. The cavity is realized in the IBM 45nm SOI CMOS process - the same process used to make many commercially available microprocessors including the IBM Power7 and Sony Playstation 3 processors. In advanced SOI CMOS processes, no partial etch steps and no vertical junctions are available, which limits the types of optical cavities that can be used for active nanophotonics. To enable efficient active devices with no process modifications, we designed a novel spoked-ring microcavity which is fully compatible with the constraints of the process. As a modulator, the device leverages the sub-100nm lithography resolution of the process to create radially extending p-n junctions, providing high optical fill factor depletion-mode modulation and thereby eliminating the need for a vertical junction. The device is made entirely in the transistor active layer, low-loss crystalline silicon, which eliminates the need for a partial etch commonly used to create ridge cavities. In this work, we present the full optical and electrical design of the cavity including rigorous mode solver and FDTD simulations to design the Qlimiting electrical contacts and the coupling/excitation. We address the layout of active photonics within the mask set of a standard advanced CMOS process and show that high-performance photonic devices can be seamlessly monolithically integrated alongside electronics on the same chip. The present designs enable monolithically integrated optoelectronic transceivers on a single advanced CMOS chip, without requiring any process changes, enabling the penetration of photonics into the microprocessor.

Half-maximal supersymmetry from exceptional field theory

Energy Technology Data Exchange (ETDEWEB)

Malek, Emanuel [Arnold Sommerfeld Center for Theoretical Physics, Department fuer Physik, Ludwig-Maximilians-Universitaet Muenchen (Germany)

2017-10-15

We study D ≥ 4-dimensional half-maximal flux backgrounds using exceptional field theory. We define the relevant generalised structures and also find the integrability conditions which give warped half-maximal Minkowski{sub D} and AdS{sub D} vacua. We then show how to obtain consistent truncations of type II / 11-dimensional SUGRA which break half the supersymmetry. Such truncations can be defined on backgrounds admitting exceptional generalised SO(d - 1 - N) structures, where d = 11 - D, and N is the number of vector multiplets obtained in the lower-dimensional theory. Our procedure yields the most general embedding tensors satisfying the linear constraint of half-maximal gauged SUGRA. We use this to prove that all D ≥ 4 half-maximal warped AdS{sub D} and Minkowski{sub D} vacua of type II / 11-dimensional SUGRA admit a consistent truncation keeping only the gravitational supermultiplet. We also show to obtain heterotic double field theory from exceptional field theory and comment on the M-theory / heterotic duality. In five dimensions, we find a new SO(5, N) double field theory with a (6 + N)-dimensional extended space. Its section condition has one solution corresponding to 10-dimensional N = 1 supergravity and another yielding six-dimensional N = (2, 0) SUGRA. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Large area CMOS active pixel sensor x-ray imager for digital breast tomosynthesis: Analysis, modeling, and characterization

Energy Technology Data Exchange (ETDEWEB)

Zhao, Chumin; Kanicki, Jerzy, E-mail: kanicki@eecs.umich.edu [Solid-State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109 (United States); Konstantinidis, Anastasios C. [Department of Medical Physics and Biomedical Engineering, University College London, London WC1E 6BT, United Kingdom and Diagnostic Radiology and Radiation Protection, Christie Medical Physics and Engineering, The Christie NHS Foundation Trust, Manchester M20 4BX (United Kingdom); Patel, Tushita [Department of Physics, University of Virginia, Charlottesville, Virginia 22908 (United States)

2015-11-15

Purpose: Large area x-ray imagers based on complementary metal-oxide-semiconductor (CMOS) active pixel sensor (APS) technology have been proposed for various medical imaging applications including digital breast tomosynthesis (DBT). The low electronic noise (50–300 e{sup −}) of CMOS APS x-ray imagers provides a possible route to shrink the pixel pitch to smaller than 75 μm for microcalcification detection and possible reduction of the DBT mean glandular dose (MGD). Methods: In this study, imaging performance of a large area (29 × 23 cm{sup 2}) CMOS APS x-ray imager [Dexela 2923 MAM (PerkinElmer, London)] with a pixel pitch of 75 μm was characterized and modeled. The authors developed a cascaded system model for CMOS APS x-ray imagers using both a broadband x-ray radiation and monochromatic synchrotron radiation. The experimental data including modulation transfer function, noise power spectrum, and detective quantum efficiency (DQE) were theoretically described using the proposed cascaded system model with satisfactory consistency to experimental results. Both high full well and low full well (LFW) modes of the Dexela 2923 MAM CMOS APS x-ray imager were characterized and modeled. The cascaded system analysis results were further used to extract the contrast-to-noise ratio (CNR) for microcalcifications with sizes of 165–400 μm at various MGDs. The impact of electronic noise on CNR was also evaluated. Results: The LFW mode shows better DQE at low air kerma (K{sub a} < 10 μGy) and should be used for DBT. At current DBT applications, air kerma (K{sub a} ∼ 10 μGy, broadband radiation of 28 kVp), DQE of more than 0.7 and ∼0.3 was achieved using the LFW mode at spatial frequency of 0.5 line pairs per millimeter (lp/mm) and Nyquist frequency ∼6.7 lp/mm, respectively. It is shown that microcalcifications of 165–400 μm in size can be resolved using a MGD range of 0.3–1 mGy, respectively. In comparison to a General Electric GEN2 prototype DBT system (at

On the integration of ultrananocrystalline diamond (UNCD with CMOS chip

Directory of Open Access Journals (Sweden)

Hongyi Mi

2017-03-01

Full Text Available A low temperature deposition of high quality ultrananocrystalline diamond (UNCD film onto a finished Si-based CMOS chip was performed to investigate the compatibility of the UNCD deposition process with CMOS devices for monolithic integration of MEMS on Si CMOS platform. DC and radio-frequency performances of the individual PMOS and NMOS devices on the CMOS chip before and after the UNCD deposition were characterized. Electrical characteristics of CMOS after deposition of the UNCD film remained within the acceptable ranges, namely showing small variations in threshold voltage Vth, transconductance gm, cut-off frequency fT and maximum oscillation frequency fmax. The results suggest that low temperature UNCD deposition is compatible with CMOS to realize monolithically integrated CMOS-driven MEMS/NEMS based on UNCD.

Spin-phonon coupling in rod-shaped half-metallic CrO sub 2 ultrafine particles: a magnetic Raman scattering study

CERN Document Server

Yu, T; Sun, W X; Lin, J Y; Ding, J

2003-01-01

Half-metallic CrO sub 2 powder compact with rod-shaped nanoparticles was studied by micro-Raman scattering in the presence of an external magnetic field at room temperature (300 K). In the low-field region (H <= 250 mT), the frequency and intensity of the E sub g mode, an internal phonon mode of CrO sub 2 , increase dramatically with increase in the magnetic field, while the corresponding linewidth decreases. The above parameters become constant when the CrO sub 2 powder enters the saturation state at higher magnetic field. The pronounced anomalies of the Raman phonon parameters under a low magnetic field are attributed to the spin-phonon coupling enhanced by the magnetic ordering, which is induced by the external magnetic field. (letter to the editor)

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Directory of Open Access Journals (Sweden)

Shojan P. Pavunny

2014-03-01

Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

A sub-nJ CMOS ECG classifier for wireless smart sensor.

Science.gov (United States)

Chollet, Paul; Pallas, Remi; Lahuec, Cyril; Arzel, Matthieu; Seguin, Fabrice

2017-07-01

Body area sensor networks hold the promise of more efficient and cheaper medical care services through the constant monitoring of physiological markers such as heart beats. Continuously transmitting the electrocardiogram (ECG) signal requires most of the wireless ECG sensor energy budget. This paper presents the analog implantation of a classifier for ECG signals that can be embedded onto a sensor. The classifier is a sparse neural associative memory. It is implemented using the ST 65 nm CMOS technology and requires only 234 pJ per classification while achieving a 93.6% classification accuracy. The energy requirement is 6 orders of magnitude lower than a digital accelerator that performs a similar task. The lifespan of the resulting sensor is 191 times as large as that of a sensor sending all the data.

Effects of Ga substitution on the structural and magnetic properties of half metallic Fe{sub 2}MnSi Heusler compound

Energy Technology Data Exchange (ETDEWEB)

Pedro, S. S., E-mail: sandrapedro@uerj.br; Caraballo Vivas, R. J.; Andrade, V. M.; Cruz, C.; Paixão, L. S.; Contreras, C.; Costa-Soares, T.; Rocco, D. L.; Reis, M. S. [Instituto de Física, Universidade Federal Fluminense, Niterói-RJ (Brazil); Caldeira, L. [IF Sudeste MG, Campus Juiz de Fora - Núcleo de Física, Juiz de Fora-MG (Brazil); Coelho, A. A. [Instituto de Física Gleb Wataghin, Universidade Estadual de Campinas - Unicamp, Campinas-SP (Brazil); Carvalho, A. Magnus G. [Laboratório Nacional de Luz Sincrotron, CNPEM, Campinas-SP (Brazil)

2015-01-07

The so-called half-metallic magnets have been proposed as good candidates for spintronic applications due to the feature of exhibiting a hundred percent spin polarization at the Fermi level. Such materials follow the Slater-Pauling rule, which relates the magnetic moment with the valence electrons in the system. In this paper, we study the bulk polycrystalline half-metallic Fe{sub 2}MnSi Heusler compound replacing Si by Ga to determine how the Ga addition changes the magnetic, the structural, and the half-metal properties of this compound. The material does not follow the Slater-Pauling rule, probably due to a minor structural disorder degree in the system, but a linear dependence on the magnetic transition temperature with the valence electron number points to the half-metallic behavior of this compound.

Which Photodiode to Use: A Comparison of CMOS-Compatible Structures.

Science.gov (United States)

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2009-07-01

While great advances have been made in optimizing fabrication process technologies for solid state image sensors, the need remains to be able to fabricate high quality photosensors in standard CMOS processes. The quality metrics depend on both the pixel architecture and the photosensitive structure. This paper presents a comparison of three photodiode structures in terms of spectral sensitivity, noise and dark current. The three structures are n(+)/p-sub, n-well/p-sub and p(+)/n-well/p-sub. All structures were fabricated in a 0.5 mum 3-metal, 2-poly, n-well process and shared the same pixel and readout architectures. Two pixel structures were fabricated-the standard three transistor active pixel sensor, where the output depends on the photodiode capacitance, and one incorporating an in-pixel capacitive transimpedance amplifier where the output is dependent only on a designed feedback capacitor. The n-well/p-sub diode performed best in terms of sensitivity (an improvement of 3.5 x and 1.6 x over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) and signal-to-noise ratio (1.5 x and 1.2 x improvement over the n(+)/p-sub and p(+)/n-well/p-sub diodes, respectively) while the p(+)/n-well/p-sub diode had the minimum (33% compared to other two structures) dark current for a given sensitivity.

Fabrication of CMOS-compatible nanopillars for smart bio-mimetic CMOS image sensors

KAUST Repository

Saffih, Faycal

2012-06-01

In this paper, nanopillars with heights of 1μm to 5μm and widths of 250nm to 500nm have been fabricated with a near room temperature etching process. The nanopillars were achieved with a continuous deep reactive ion etching technique and utilizing PMMA (polymethylmethacrylate) and Chromium as masking layers. As opposed to the conventional Bosch process, the usage of the unswitched deep reactive ion etching technique resulted in nanopillars with smooth sidewalls with a measured surface roughness of less than 40nm. Moreover, undercut was nonexistent in the nanopillars. The proposed fabrication method achieves etch rates four times faster when compared to the state-of-the-art, leading to higher throughput and more vertical side walls. The fabrication of the nanopillars was carried out keeping the CMOS process in mind to ultimately obtain a CMOS-compatible process. This work serves as an initial step in the ultimate objective of integrating photo-sensors based on these nanopillars seamlessly along with the controlling transistors to build a complete bio-inspired smart CMOS image sensor on the same wafer. © 2012 IEEE.

A Standard CMOS Humidity Sensor without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 2 ?W power dissipation, voltage-output, humidity sensor accurate to 5% relative humidity was developed using the LFoundry 0.15 ?m CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a Intervia Photodielectric 8023?10 humidity-sensitive layer, and a CMOS capacitance to voltage converter.

Fully CMOS-compatible titanium nitride nanoantennas

Energy Technology Data Exchange (ETDEWEB)

Briggs, Justin A., E-mail: jabriggs@stanford.edu [Department of Applied Physics, Stanford University, 348 Via Pueblo Mall, Stanford, California 94305 (United States); Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Naik, Gururaj V.; Baum, Brian K.; Dionne, Jennifer A. [Department of Materials Science and Engineering, Stanford University, 496 Lomita Mall, Stanford, California 94305 (United States); Petach, Trevor A.; Goldhaber-Gordon, David [Department of Physics, Stanford University, 382 Via Pueblo Mall, Stanford, California 94305 (United States)

2016-02-01

CMOS-compatible fabrication of plasmonic materials and devices will accelerate the development of integrated nanophotonics for information processing applications. Using low-temperature plasma-enhanced atomic layer deposition (PEALD), we develop a recipe for fully CMOS-compatible titanium nitride (TiN) that is plasmonic in the visible and near infrared. Films are grown on silicon, silicon dioxide, and epitaxially on magnesium oxide substrates. By optimizing the plasma exposure per growth cycle during PEALD, carbon and oxygen contamination are reduced, lowering undesirable loss. We use electron beam lithography to pattern TiN nanopillars with varying diameters on silicon in large-area arrays. In the first reported single-particle measurements on plasmonic TiN, we demonstrate size-tunable darkfield scattering spectroscopy in the visible and near infrared regimes. The optical properties of this CMOS-compatible material, combined with its high melting temperature and mechanical durability, comprise a step towards fully CMOS-integrated nanophotonic information processing.

The AMchip

International Nuclear Information System (INIS)

Amendolia, S.R.; Galeotti, S.; Morsani, F.; Passuello, D.; Ristori, L.; Sciacca, G.; Turini, N.

1992-01-01

An Associative Memory full-custom CMOS VLSI chip (AMchip), to be used in fast Trigger Systems for pattern recognition, has been designed and is being successfully tested at INFN in Pisa. The AMchip is the first full-custom associative memory IC developed for high energy physics until today. It contains about 140,000 mos transistors, has been realized in 1.5 micron, double metal, silicon gate CMOS technology, and is housed in a 120 pins package. The AMchip has been designed to be used with any kind of detector which provides in output the hits coordinates, such as, for example, a silicon microstrips detector. In this paper, the authors plan to realize a new AMchip version using sub-micron technology (available in 1992) and new circuital solutions, improving the patterns capacity of a factor 4, and improving significantly the speed. These versions will be developed to match new high energy physics experiments' specific requirements (see, for example, the CDF Silicon Vertex Tracker)

An RF Energy Harvester System Using UHF Micropower CMOS Rectifier Based on a Diode Connected CMOS Transistor

Directory of Open Access Journals (Sweden)

Mohammad Reza Shokrani

2014-01-01

Full Text Available This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18 μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier’s output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

An RF energy harvester system using UHF micropower CMOS rectifier based on a diode connected CMOS transistor.

Science.gov (United States)

Shokrani, Mohammad Reza; Khoddam, Mojtaba; Hamidon, Mohd Nizar B; Kamsani, Noor Ain; Rokhani, Fakhrul Zaman; Shafie, Suhaidi Bin

2014-01-01

This paper presents a new type diode connected MOS transistor to improve CMOS conventional rectifier's performance in RF energy harvester systems for wireless sensor networks in which the circuits are designed in 0.18  μm TSMC CMOS technology. The proposed diode connected MOS transistor uses a new bulk connection which leads to reduction in the threshold voltage and leakage current; therefore, it contributes to increment of the rectifier's output voltage, output current, and efficiency when it is well important in the conventional CMOS rectifiers. The design technique for the rectifiers is explained and a matching network has been proposed to increase the sensitivity of the proposed rectifier. Five-stage rectifier with a matching network is proposed based on the optimization. The simulation results shows 18.2% improvement in the efficiency of the rectifier circuit and increase in sensitivity of RF energy harvester circuit. All circuits are designed in 0.18 μm TSMC CMOS technology.

Neutron absorbed dose in a pacemaker CMOS

Energy Technology Data Exchange (ETDEWEB)

Borja H, C. G.; Guzman G, K. A.; Valero L, C. Y.; Banuelos F, A.; Hernandez D, V. M.; Vega C, H. R. [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Calle Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico); Paredes G, L., E-mail: candy_borja@hotmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

2011-11-15

The absorbed dose due to neutrons by a Complementary Metal Oxide Semiconductor (CMOS) has been estimated using Monte Carlo methods. Eventually a person with a pacemaker becomes a patient that must be treated by radiotherapy with a linear accelerator; the pacemaker has integrated circuits as CMOS that are sensitive to intense and pulsed radiation fields. When the Linac is working in Bremsstrahlung mode an undesirable neutron field is produced due to photoneutron reactions; these neutrons could damage the CMOS putting the patient at risk during the radiotherapy treatment. In order to estimate the neutron dose in the CMOS a Monte Carlo calculation was carried out where a full radiotherapy vault room was modeled with a W-made spherical shell in whose center was located the source term of photoneutrons produced by a Linac head operating in Bremsstrahlung mode at 18 MV. In the calculations a phantom made of tissue equivalent was modeled while a beam of photoneutrons was applied on the phantom prostatic region using a field of 10 x 10 cm{sup 2}. During simulation neutrons were isotropically transported from the Linac head to the phantom chest, here a 1 {theta} x 1 cm{sup 2} cylinder made of polystyrene was modeled as the CMOS, where the neutron spectrum and the absorbed dose were estimated. Main damages to CMOS are by protons produced during neutron collisions protective cover made of H-rich materials, here the neutron spectrum that reach the CMOS was calculated showing a small peak around 0.1 MeV and a larger peak in the thermal region, both connected through epithermal neutrons. (Author)

Nanometer CMOS ICs from basics to ASICs

CERN Document Server

J M Veendrick, Harry

2017-01-01

This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

CMOS-sensors for energy-resolved X-ray imaging

International Nuclear Information System (INIS)

Doering, D.; Amar-Youcef, S.; Deveaux, M.; Linnik, B.; Müntz, C.; Stroth, Joachim; Baudot, J.; Dulinski, W.; Kachel, M.

2016-01-01

Due to their low noise, CMOS Monolithic Active Pixel Sensors are suited to sense X-rays with a few keV quantum energy, which is of interest for high resolution X-ray imaging. Moreover, the good energy resolution of the silicon sensors might be used to measure this quantum energy. Combining both features with the good spatial resolution of CMOS sensors opens the potential to build ''color sensitive' X-ray cameras. Taking such colored images is hampered by the need to operate the CMOS sensors in a single photon counting mode, which restricts the photon flux capability of the sensors. More importantly, the charge sharing between the pixels smears the potentially good energy resolution of the sensors. Based on our experience with CMOS sensors for charged particle tracking, we studied techniques to overcome the latter by means of an offline processing of the data obtained from a CMOS sensor prototype. We found that the energy resolution of the pixels can be recovered at the expense of reduced quantum efficiency. We will introduce the results of our study and discuss the feasibility of taking colored X-ray pictures with CMOS sensors

Half-space albedo problem with modified F{sub N} method for linear and quadratic anisotropic scattering

Energy Technology Data Exchange (ETDEWEB)

Tuereci, R.G. [Kirikkale Univ., Kirikkale (Turkey). Kirikkale Vocational School; Tuereci, D. [Ministry of Education, Ankara (Turkey). 75th year Anatolia High School

2017-05-15

One speed, time independent and homogeneous medium neutron transport equation can be solved with the anisotropic scattering which includes both the linear anisotropic and the quadratic anisotropic scattering properties. Having solved Case's eigenfunctions and the orthogonality relations among these eigenfunctions, some neutron transport problems such as albedo problem can be calculated as numerically by using numerical or semi-analytic methods. In this study the half-space albedo problem is investigated by using the modified F{sub N} method.

A CMOS In-Pixel CTIA High Sensitivity Fluorescence Imager.

Science.gov (United States)

Murari, Kartikeya; Etienne-Cummings, Ralph; Thakor, Nitish; Cauwenberghs, Gert

2011-10-01

Traditionally, charge coupled device (CCD) based image sensors have held sway over the field of biomedical imaging. Complementary metal oxide semiconductor (CMOS) based imagers so far lack sensitivity leading to poor low-light imaging. Certain applications including our work on animal-mountable systems for imaging in awake and unrestrained rodents require the high sensitivity and image quality of CCDs and the low power consumption, flexibility and compactness of CMOS imagers. We present a 132×124 high sensitivity imager array with a 20.1 μm pixel pitch fabricated in a standard 0.5 μ CMOS process. The chip incorporates n-well/p-sub photodiodes, capacitive transimpedance amplifier (CTIA) based in-pixel amplification, pixel scanners and delta differencing circuits. The 5-transistor all-nMOS pixel interfaces with peripheral pMOS transistors for column-parallel CTIA. At 70 fps, the array has a minimum detectable signal of 4 nW/cm(2) at a wavelength of 450 nm while consuming 718 μA from a 3.3 V supply. Peak signal to noise ratio (SNR) was 44 dB at an incident intensity of 1 μW/cm(2). Implementing 4×4 binning allowed the frame rate to be increased to 675 fps. Alternately, sensitivity could be increased to detect about 0.8 nW/cm(2) while maintaining 70 fps. The chip was used to image single cell fluorescence at 28 fps with an average SNR of 32 dB. For comparison, a cooled CCD camera imaged the same cell at 20 fps with an average SNR of 33.2 dB under the same illumination while consuming over a watt.

A high-speed low-noise transimpedance amplifier in a 0.25 μm CMOS technology

International Nuclear Information System (INIS)

Anelli, Giovanni; Borer, Kurt; Casagrande, Luca; Despeisse, Matthieu; Jarron, Pierre; Pelloux, Nicolas; Saramad, Shahyar

2003-01-01

We present the simulated and measured performance of a transimpedance amplifier designed in a quarter micron CMOS process. Containing only NMOS and PMOS devices, this amplifier can be integrated in any submicron CMOS process. The main feature of this design is the use of a transistor in the feedback path instead of a resistor. The circuit has been optimized for reading signals coming from silicon strip detectors with few pF input capacitance. For an input charge of 4 fC, an input capacitance of 4 pF and a transresistance of 135 kΩ, we have measured an output pulse fall time of 3 ns and an Equivalent Noise Charge (ENC) of around 350 electrons rms. In view of the operation of the chip at cryogenic temperatures, measurements at 130 K have also been carried out, showing an overall improvement in the performance of the chip. Fall times down to 1.5 ns have been measured. An integrated circuit containing 32 channels has been designed and wire bonded to a silicon strip detector and successfully used for the construction of a high-intensity proton beam hodoscope for the NA60 experiment. The chip has been laid out using special techniques to improve its radiation tolerance, and it has been irradiated up to 10 Mrd (SiO 2 ) without any degradation in the performance

Tunable Heterodyne Receiver from 100 Micron to 1,000 Micron for Airborne Observations

Science.gov (United States)

Roeser, H. P.; Wattenbach, R.; Vanderwal, P.

1984-01-01

Interest in high resolution spectrometers for the submillimeter wavelength range from 100 micron to 1,000 micron is mostly stimulated by molecular spectroscopy in radioastronomy and atmospheric physics, and by plasma diagnostic experiments. Schottky diodes in waveguide mixer technology and InSb-hot electron bolometers are successfully used in the 0.5 to a few millimeter range whereas tandem Fabry-Perot spectrometers combined with photoconductive detectors (Ge:Sb and Ge:Ga) are used for the 100 micron range. Recent research on heterodyne spectrometers, with Schottky diodes in an open structure mixer and a molecular laser as local oscillators, which can be used over the whole wavelength range is summarized.

High-speed nonvolatile CMOS/MNOS RAM

International Nuclear Information System (INIS)

Derbenwick, G.F.; Dodson, W.D.; Sokel, R.J.

1979-01-01

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si 3 N 4 insulator deposited at 750 0 C. Read cycle times less than 350 ns and write cycle times of 1 μs are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected

MEMS capacitive pressure sensor monolithically integrated with CMOS readout circuit by using post CMOS processes

Science.gov (United States)

Jang, Munseon; Yun, Kwang-Seok

2017-12-01

In this paper, we presents a MEMS pressure sensor integrated with a readout circuit on a chip for an on-chip signal processing. The capacitive pressure sensor is formed on a CMOS chip by using a post-CMOS MEMS processes. The proposed device consists of a sensing capacitor that is square in shape, a reference capacitor and a readout circuitry based on a switched-capacitor scheme to detect capacitance change at various environmental pressures. The readout circuit was implemented by using a commercial 0.35 μm CMOS process with 2 polysilicon and 4 metal layers. Then, the pressure sensor was formed by wet etching of metal 2 layer through via hole structures. Experimental results show that the MEMS pressure sensor has a sensitivity of 11 mV/100 kPa at the pressure range of 100-400 kPa.

Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

Energy Technology Data Exchange (ETDEWEB)

Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica; Tisa, Simone; Zappa, Franco [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2013-12-15

We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

JPL CMOS Active Pixel Sensor Technology

Science.gov (United States)

Fossum, E. R.

1995-01-01

This paper will present the JPL-developed complementary metal- oxide-semiconductor (CMOS) active pixel sensor (APS) technology. The CMOS APS has achieved performance comparable to charge coupled devices, yet features ultra low power operation, random access readout, on-chip timing and control, and on-chip analog to digital conversion. Previously published open literature will be reviewed.

Rapid growth of amorphous carbon films on the inner surface of micron-thick and hollow-core fibers

Energy Technology Data Exchange (ETDEWEB)

Ji, Longfei [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Liu, Dongping, E-mail: Dongping.liu@dlnu.edu.cn [Fujian Key Laboratory for Plasma and Magnetic Resonance, Department of Electric Science, School of Physics and Mechanical and Electrical Engineering, Xiamen University, Xiamen, Fujian 361005 (China); School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Zhou, Xinwei [Department of Mechanical Engineering, Zhejiang University, Zhejiang 310007 (China); Song, Ying [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 (China); Ni, Weiyuan [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China); School of Science, Changchun University of Science and Technology, Changchun, Jilin 130022 (China); Niu, Jinhai; Fan, Hongyu [School of Physics and Materials Engineering, Dalian Nationalities University, Dalian 116600 (China)

2013-10-01

Ultrathick (> 25 μm) carbon films were obtained on the inner surface of hollow and micron-thick quartz fibers by confining CH{sub 4}/He or C{sub 2}H{sub 2}/He microplasmas in their hollow cores. The resulting carbon films were studied by using scanning electron microscopy and energy-dispersive X-ray spectroscopy. The microplasma-enhanced chemical vapor deposition (CVD) technique resulted in the uniform growth of amorphous carbon films on the inner surface of very long (> 1 m) hollow-core fibers. Film deposition is performed by using microplasmas at atmospheric pressure and at 50 Pa. The carbon films obtained with the latter show the smooth inner surfaces and the well continuity across the film/optical fiber. Low-pressure CH{sub 4}/He and C{sub 2}H{sub 2}/He microplasmas can lead to a rapid growth (∼ 2.00 μm/min) of carbon films with their thickness of > 25 μm. The optical emission measurements show that various hydrocarbon species were formed in these depositing microplasmas due to the collisions between CH{sub 4}/C{sub 2}H{sub 2} molecules and energetic species. The microplasma-enhanced CVD technique running without the complicated fabrication processes shows its potentials for rapidly depositing the overlong carbon tubes with their inner diameters of tens of microns. - Highlights: • The microplasma device is applied for coating deposition inside hollow-core fibers. • The microplasma device results in > 25 μm-thick carbon films. • The microplasma device is simple for deposition of ultralong carbon tubes.

Observation of the dynamics of magnetically induced chains of sub-micron superparamagnetic beads in aqueous solutions by laser light scattering

International Nuclear Information System (INIS)

Tanizawa, Y; Tashiro, T; Sandhu, A; Ko, P J

2013-01-01

Optical monitoring the behaviour of magnetically induced self-assembled chains of superparamagnetic beads (SPBs) are of interest for biomedical applications such as biosensors. However, it is difficult to directly monitor magnetically induced self-assembly of sub-micron nano-beads with conventional optical microscopes. Here, we describe the optical observation of the dynamics of magnetically induced self-assembled rotating chains of 130 nm SPBs in aqueous solutions by laser light scattering. Magnetic fields of ∼1 kOe were applied to control the self-assembly chains of SPBs and their behaviour analyzed by monitoring the intensity of laser light scattered from the chain structures. We compared the light scattering from chains that were formed only by the application of external fields with chains formed by beads functionalized by EDC, where chemical reactions lead to the bonding of individual beads to form chains. The EDC experiments are a precursor to experiments on molecular recognition applications for biomedical diagnostics.

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2014-01-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa

2017-11-23

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications. While there exist bulk material reduction methods to flex them, such thinned CMOS electronics are fragile and vulnerable to handling for high throughput manufacturing. Here, we show a fusion of a CMOS technology compatible fabrication process for flexible CMOS electronics, with inkjet and conductive cellulose based interconnects, followed by additive manufacturing (i.e. 3D printing based packaging) and finally roll-to-roll printing of packaged decal electronics (thin film transistors based circuit components and sensors) focusing on printed high performance flexible electronic systems. This work provides the most pragmatic route for packaged flexible electronic systems for wide ranging applications.

Parametric study of plasma-mediated thermoluminescence produced by Al2O3 sub-micron powders

Science.gov (United States)

Morávek, T.; Ambrico, P. F.; Ambrico, M.; Schiavulli, L.; Ráheľ, J.

2017-10-01

Sub-micron Al2O3 powders with a surface activated by dielectric barrier discharge exhibit improved performance in wet deposition of ceramic layers. In addressing the possible mechanisms responsible for the observed improvement, a comprehensive thermoluminescence (TL) study of plasma-activated powders was performed. TL offers the unique possibility of exploring the population of intrinsic electrons/holes in the charge trapping states. This study covers a wide range of experimental conditions affecting the TL of powders: treatment time, plasma working gas composition, change of discharge configuration, step-annealing of powder, exposure to laser irradiation and aging time. Deconvoluted TL spectra were followed for the changes in their relative contributions. The TL spectra of all tested gases (air, Ar, N2 and 5% He in N2) consist of the well-known main dosimetric peak at 450 K and a peak of similar magnitude at higher temperatures, centered between 700 and 800 K depending on the working gas used. N2 plasma treatment gave rise to a new specific TL peak at 510 K, which exhibited several peculiarities. Initial thermal annealing of Al2O3 powders led to its significant amplification (unlike the other peaks); the peak was insensitive to optical bleaching, and it exhibited slow gradual growth during the long-term aging test. Besides its relevance to the ceramic processing studies, a comprehensive set of data is presented that provides a useful and unconventional view on plasma-mediated material changes.

X-ray Hybrid CMOS Detectors : Recent progress in development and characterization

Science.gov (United States)

Chattopadhyay, Tanmoy; Falcone, Abraham; Burrows, David N.

2017-08-01

PennState high energy astronomy laboratory has been working on the development and characterization of Hybrid CMOS Detectors (HCDs) for last few years in collaboration with Teledyne Imaging Sensors (TIS). HCDs are preferred over X-ray CCDs due to their higher and flexible read out rate, radiation hardness and low power which make them more suitable for next generation large area X-ray telescopic missions. An H2RG detector with 36 micron pixel pitch and 18 micron ROIC, has been selected for a sounding rocket flight in 2018. The H2RG detector provides ~2.5 % energy resolution at 5.9 keV and ~7 e- read noise when coupled to a cryo-SIDECAR. We could also detect a clear Oxygen line (~0.5 keV) from the detector implying a lower energy threshold of ~0.3 keV. Further improvement in the energy resolution and read noise is currently under progress. We have been working on the characterization of small pixel HCDs (12.5 micron pixel; smallest pixel HCDs developed so far) which is important for the development of next generation high resolution X-ray spectroscopic instrument based on HCDs. Event recognition in HCDs is another exciting prospect which have been successfully shown to work with a 64 X 64 pixel prototype SPEEDSTAR-EXD which use comparators at each pixel to read out only those pixels having detectable signal, thereby providing an order of magnitude improvement in the read out rate. Currently, we are working on the development of a large area SPEEDSTAR-EXD array for the development of a full fledged instrument. HCDs due to their fast read out, can also be explored as a large FOV instrument to study GRB afterglows and variability and spectroscopic study of other astrophysical transients. In this context, we are characterizing a Lobster-HCD system at multiple energies and multiple off-axis angles for future rocket or CubeSate experiments. In this presentation, I will briefly present these new developments and experiments with HCDs and the analysis techniques.

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

Science.gov (United States)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-03-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

Direct, CMOS In-Line Process Flow Compatible, Sub 100 °C Cu-Cu Thermocompression Bonding Using Stress Engineering

Science.gov (United States)

Panigrahi, Asisa Kumar; Ghosh, Tamal; Kumar, C. Hemanth; Singh, Shiv Govind; Vanjari, Siva Rama Krishna

2018-05-01

Diffusion of atoms across the boundary between two bonding layers is the key for achieving excellent thermocompression Wafer on Wafer bonding. In this paper, we demonstrate a novel mechanism to increase the diffusion across the bonding interface and also shows the CMOS in-line process flow compatible Sub 100 °C Cu-Cu bonding which is devoid of Cu surface treatment prior to bonding. The stress in sputtered Cu thin films was engineered by adjusting the Argon in-let pressure in such a way that one film had a compressive stress while the other film had tensile stress. Due to this stress gradient, a nominal pressure (2 kN) and temperature (75 °C) was enough to achieve a good quality thermocompression bonding having a bond strength of 149 MPa and very low specific contact resistance of 1.5 × 10-8 Ω-cm2. These excellent mechanical and electrical properties are resultant of a high quality Cu-Cu bonding having grain growth between the Cu films across the boundary and extended throughout the bonded region as revealed by Cross-sectional Transmission Electron Microscopy. In addition, reliability assessment of Cu-Cu bonding with stress engineering was demonstrated using multiple current stressing and temperature cycling test, suggests excellent reliable bonding without electrical performance degradation.

Batch Processing of CMOS Compatible Feedthroughs

DEFF Research Database (Denmark)

Rasmussen, F.E.; Heschel, M.; Hansen, Ole

2003-01-01

. The feedthrough technology employs a simple solution to the well-known CMOS compatibility issue of KOH by protecting the CMOS side of the wafer using sputter deposited TiW/Au. The fabricated feedthroughs exhibit excellent electrical performance having a serial resistance of 40 mOmega and a parasitic capacitance...... of 2.5 pF. (C) 2003 Elsevier Science B.V. All rights reserved....

Ultrafast microwave hydrothermal synthesis and characterization of Bi{sub 1−x}La{sub x}FeO{sub 3} micronized particles

Energy Technology Data Exchange (ETDEWEB)

Ponzoni, C. [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy); Cannio, M., E-mail: maria.cannio@unimore.it [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy); Boccaccini, D.N.; Bahl, C.R.H.; Agersted, K. [Department of Energy Conversion and Storage, Technical University of Denmark Frederiksborgvej, 4000 Roskilde (Denmark); Leonelli, C. [Department of Engineering “Enzo Ferrari”, University of Modena and Reggio Emilia, Modena 42025 (Italy)

2015-07-15

In this work a microwave assisted hydrothermal method is applied to successfully synthesize lanthanum doped bismuth ferrites (BLFO, Bi{sub 1−x}La{sub x}FeO{sub 3} where x = 0, 0.15, 0.30 and 0.45). The growth mechanism of the Bi{sub 1−x}La{sub x}FeO{sub 3} crystallites is discussed in detail. The existence of the single-phase perovskite structure for all the doped samples is confirmed by the X-ray powder diffraction patterns. A peak shift, observed at lower angle with increasing La doping concentration, indicates that the BiFeO{sub 3} lattice is doped. The results of TG/DTA show a shift in the transition temperature from 805 °C to 815 °C as function of the La-doping for all the doped powders. At higher levels of La doping, i.e. x = 0.30 and 0.45, significant weight losses occur above 860 °C suggesting a change in the physical and chemical properties. Finally, magnetic measurements are carried out at room temperature for pure BiFeO{sub 3} and Bi{sub 0.85}La{sub 0.15}FeO{sub 3}. The results indicate that the materials are both weakly ferromagnetic, with no significant hysteresis in the curves. - Graphical abstract: Display Omitted - Highlights: • MW hydrothermal method applied to synthesize Bi{sub 1−x}La{sub x}FeO{sub 3}, x = 0, 0.15, 0.30, 0.45. • A single-phase perovskite structure for all the samples was confirmed by XRD. • A T{sub c} shift in La doped BiFeO{sub 3} DTA was observed as function of the La-doping. • Magnetic measurements indicate that the materials are weakly ferromagnetic.

Technology CAD for germanium CMOS circuit

International Nuclear Information System (INIS)

Saha, A.R.; Maiti, C.K.

2006-01-01

Process simulation for germanium MOSFETs (Ge-MOSFETs) has been performed in 2D SILVACO virtual wafer fabrication (VWF) suite towards the technology CAD for Ge-CMOS process development. Material parameters and mobility models for Germanium were incorporated in simulation via C-interpreter function. We also report on the device design issues along with the DC and RF characterization of the bulk Ge-MOSFETs, AC parameter extraction and circuit simulation of Ge-CMOS. Simulation results are compared with bulk-Si devices. Simulations predict a cut-off frequency, f T of about 175 GHz for Ge-MOSFETs compared to 70 GHz for a similar gate-length Si MOSFET. For a single stage Ge-CMOS inverter circuit, a GATE delay of 0.6 ns is predicted

Resistor Extends Life Of Battery In Clocked CMOS Circuit

Science.gov (United States)

Wells, George H., Jr.

1991-01-01

Addition of fixed resistor between battery and clocked complementary metal oxide/semiconductor (CMOS) circuit reduces current drawn from battery. Basic idea to minimize current drawn from battery by operating CMOS circuit at lowest possible current consistent with use of simple, fixed off-the-shelf components. Prolongs lives of batteries in such low-power CMOS circuits as watches and calculators.

Progress towards sub-micron hard x-ray imaging using elliptically bent mirrors and its applications

International Nuclear Information System (INIS)

MacDowell, A.A.; Lamble, G.M.; Celestre, R.S.; Padmore, H.A.; Chang, C.H.; Patel, J.R.

1998-06-01

The authors have developed an x-ray micro-probe facility utilizing mirror bending techniques that allow white light x-rays (4--12keV) from the Advanced light Source Synchrotron to be focused down to spot sizes of micron spatial dimensions. They have installed a 4 crystal monochromator prior to the micro-focusing mirrors. The monochromator is designed such that it can move out of the way of the input beam, and allows the same micron sized sample to be illuminated with either white or monochromatic radiation. Illumination of the sample with white light allows for elemental mapping and Laue x-ray diffraction, while illumination of the sample with monochromatic light allows for elemental mapping (with reduced background), micro-X-ray absorption spectroscopy and micro-diffraction. The performance of the system will be described as will some of the initial experiments that cover the various disciplines of Earth, Material and Life Sciences

Progress towards sub-micron hard x-ray imaging using elliptically bent mirrors and its applications

Energy Technology Data Exchange (ETDEWEB)

MacDowell, A.A.; Lamble, G.M.; Celestre, R.S.; Padmore, H.A. [Lawrence Berkeley National Lab., CA (United States); Chang, C.H.; Patel, J.R. [Lawrence Berkeley National Lab., CA (United States). Advanced Light Source Div.]|[Stanford Univ., CA (United States)

1998-06-01

The authors have developed an x-ray micro-probe facility utilizing mirror bending techniques that allow white light x-rays (4--12keV) from the Advanced light Source Synchrotron to be focused down to spot sizes of micron spatial dimensions. They have installed a 4 crystal monochromator prior to the micro-focusing mirrors. The monochromator is designed such that it can move out of the way of the input beam, and allows the same micron sized sample to be illuminated with either white or monochromatic radiation. Illumination of the sample with white light allows for elemental mapping and Laue x-ray diffraction, while illumination of the sample with monochromatic light allows for elemental mapping (with reduced background), micro-X-ray absorption spectroscopy and micro-diffraction. The performance of the system will be described as will some of the initial experiments that cover the various disciplines of Earth, Material and Life Sciences.

Carbon Nanotube Integration with a CMOS Process

Science.gov (United States)

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Pareja Obregon, Pablo D.; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto

2010-01-01

This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture. PMID:22319330

Depleted CMOS pixels for LHC proton–proton experiments

International Nuclear Information System (INIS)

Wermes, N.

2016-01-01

While so far monolithic pixel detectors have remained in the realm of comparatively low rate and radiation applications outside LHC, new developments exploiting high resistivity substrates with three or four well CMOS process options allow reasonably large depletion depths and full CMOS circuitry in a monolithic structure. This opens up the possibility to target CMOS pixel detectors also for high radiation pp-experiments at the LHC upgrade, either in a hybrid-type fashion or even fully monolithic. Several pixel matrices have been prototyped with high ohmic substrates, high voltage options, and full CMOS electronics. They were characterized in the lab and in test beams. An overview of the necessary development steps and different approaches as well as prototype results are presented in this paper.

Single photon detection and localization accuracy with an ebCMOS camera

Energy Technology Data Exchange (ETDEWEB)

Cajgfinger, T. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Dominjon, A., E-mail: agnes.dominjon@nao.ac.jp [Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France); Barbier, R. [CNRS/IN2P3, Institut de Physique Nucléaire de Lyon, Villeurbanne F-69622 (France); Université de Lyon, Université de Lyon 1, Lyon 69003 France. (France)

2015-07-01

The CMOS sensor technologies evolve very fast and offer today very promising solutions to existing issues facing by imaging camera systems. CMOS sensors are very attractive for fast and sensitive imaging thanks to their low pixel noise (1e-) and their possibility of backside illumination. The ebCMOS group of IPNL has produced a camera system dedicated to Low Light Level detection and based on a 640 kPixels ebCMOS with its acquisition system. After reminding the principle of detection of an ebCMOS and the characteristics of our prototype, we confront our camera to other imaging systems. We compare the identification efficiency and the localization accuracy of a point source by four different photo-detection devices: the scientific CMOS (sCMOS), the Charge Coupled Device (CDD), the Electron Multiplying CCD (emCCD) and the Electron Bombarded CMOS (ebCMOS). Our ebCMOS camera is able to identify a single photon source in less than 10 ms with a localization accuracy better than 1 µm. We report as well efficiency measurement and the false positive identification of the ebCMOS camera by identifying more than hundreds of single photon sources in parallel. About 700 spots are identified with a detection efficiency higher than 90% and a false positive percentage lower than 5. With these measurements, we show that our target tracking algorithm can be implemented in real time at 500 frames per second under a photon flux of the order of 8000 photons per frame. These results demonstrate that the ebCMOS camera concept with its single photon detection and target tracking algorithm is one of the best devices for low light and fast applications such as bioluminescence imaging, quantum dots tracking or adaptive optics.

Broadband image sensor array based on graphene-CMOS integration

Science.gov (United States)

Goossens, Stijn; Navickaite, Gabriele; Monasterio, Carles; Gupta, Shuchi; Piqueras, Juan José; Pérez, Raúl; Burwell, Gregory; Nikitskiy, Ivan; Lasanta, Tania; Galán, Teresa; Puma, Eric; Centeno, Alba; Pesquera, Amaia; Zurutuza, Amaia; Konstantatos, Gerasimos; Koppens, Frank

2017-06-01

Integrated circuits based on complementary metal-oxide-semiconductors (CMOS) are at the heart of the technological revolution of the past 40 years, enabling compact and low-cost microelectronic circuits and imaging systems. However, the diversification of this platform into applications other than microcircuits and visible-light cameras has been impeded by the difficulty to combine semiconductors other than silicon with CMOS. Here, we report the monolithic integration of a CMOS integrated circuit with graphene, operating as a high-mobility phototransistor. We demonstrate a high-resolution, broadband image sensor and operate it as a digital camera that is sensitive to ultraviolet, visible and infrared light (300-2,000 nm). The demonstrated graphene-CMOS integration is pivotal for incorporating 2D materials into the next-generation microelectronics, sensor arrays, low-power integrated photonics and CMOS imaging systems covering visible, infrared and terahertz frequencies.

CMOS Cell Sensors for Point-of-Care Diagnostics

Science.gov (United States)

Adiguzel, Yekbun; Kulah, Haluk

2012-01-01

The burden of health-care related services in a global era with continuously increasing population and inefficient dissipation of the resources requires effective solutions. From this perspective, point-of-care diagnostics is a demanded field in clinics. It is also necessary both for prompt diagnosis and for providing health services evenly throughout the population, including the rural districts. The requirements can only be fulfilled by technologies whose productivity has already been proven, such as complementary metal-oxide-semiconductors (CMOS). CMOS-based products can enable clinical tests in a fast, simple, safe, and reliable manner, with improved sensitivities. Portability due to diminished sensor dimensions and compactness of the test set-ups, along with low sample and power consumption, is another vital feature. CMOS-based sensors for cell studies have the potential to become essential counterparts of point-of-care diagnostics technologies. Hence, this review attempts to inform on the sensors fabricated with CMOS technology for point-of-care diagnostic studies, with a focus on CMOS image sensors and capacitance sensors for cell studies. PMID:23112587

CMOS capacitive sensors for lab-on-chip applications a multidisciplinary approach

CERN Document Server

Ghafar-Zadeh, Ebrahim

2010-01-01

The main components of CMOS capacitive biosensors including sensing electrodes, bio-functionalized sensing layer, interface circuitries and microfluidic packaging are verbosely explained in chapters 2-6 after a brief introduction on CMOS based LoCs in Chapter 1. CMOS Capacitive Sensors for Lab-on-Chip Applications is written in a simple pedagogical way. It emphasises practical aspects of fully integrated CMOS biosensors rather than mathematical calculations and theoretical details. By using CMOS Capacitive Sensors for Lab-on-Chip Applications, the reader will have circuit design methodologies,

CMOS optimization for radiation hardness

International Nuclear Information System (INIS)

Derbenwick, G.F.; Fossum, J.G.

1975-01-01

Several approaches to the attainment of radiation-hardened MOS circuits have been investigated in the last few years. These have included implanting the SiO 2 gate insulator with aluminum, using chrome-aluminum layered gate metallization, using Al 2 O 3 as the gate insulator, and optimizing the MOS fabrication process. Earlier process optimization studies were restricted primarily to p-channel devices operating with negative gate biases. Since knowledge of the hardness dependence upon processing and design parameters is essential in producing hardened integrated circuits, a comprehensive investigation of the effects of both process and design optimization on radiation-hardened CMOS integrated circuits was undertaken. The goals are to define and establish a radiation-hardened processing sequence for CMOS integrated circuits and to formulate quantitative relationships between process and design parameters and the radiation hardness. Using these equations, the basic CMOS design can then be optimized for radiation hardness and some understanding of the basic physics responsible for the radiation damage can be gained. Results are presented

CMOS MEMS capacitive absolute pressure sensor

International Nuclear Information System (INIS)

Narducci, M; Tsai, J; Yu-Chia, L; Fang, W

2013-01-01

This paper presents the design, fabrication and characterization of a capacitive pressure sensor using a commercial 0.18 µm CMOS (complementary metal–oxide–semiconductor) process and postprocess. The pressure sensor is capacitive and the structure is formed by an Al top electrode enclosed in a suspended SiO 2 membrane, which acts as a movable electrode against a bottom or stationary Al electrode fixed on the SiO 2 substrate. Both the movable and fixed electrodes form a variable parallel plate capacitor, whose capacitance varies with the applied pressure on the surface. In order to release the membranes the CMOS layers need to be applied postprocess and this mainly consists of four steps: (1) deposition and patterning of PECVD (plasma-enhanced chemical vapor deposition) oxide to protect CMOS pads and to open the pressure sensor top surface, (2) etching of the sacrificial layer to release the suspended membrane, (3) deposition of PECVD oxide to seal the etching holes and creating vacuum inside the gap, and finally (4) etching of the passivation oxide to open the pads and allow electrical connections. This sensor design and fabrication is suitable to obey the design rules of a CMOS foundry and since it only uses low-temperature processes, it allows monolithic integration with other types of CMOS compatible sensors and IC (integrated circuit) interface on a single chip. Experimental results showed that the pressure sensor has a highly linear sensitivity of 0.14 fF kPa −1 in the pressure range of 0–300 kPa. (paper)

Synthesis and characterization particles of Ba{sub 0,50}Sr{sub 0,50}Co{sub 0,80}Fe{sub 0,20}O{sub 3} obtained by the citrate-EDTA technique; Sintese e caracterizacao de particulados de Ba{sub 0,50}Sr{sub 0,50}Co{sub 0,80}Fe{sub 0,20}O{sub 3} obtidos pela tecnica dos citratos-EDTA

Energy Technology Data Exchange (ETDEWEB)

Bonturim, E; Vargas, R A; Andreoli, M; Seo, E S.M., [Instituto de Pesquisas Energeticas e Nucleares (CCTM/IPEN/CNEN-SP), Sao Paulo, SP (Brazil). Centro de Ciencia e Tecnologia de Materiais

2010-07-01

The Ba{sub (1-x)}Sr{sub (x)}Co{sub (1-y)}Fe{sub (y)}O{sub (3)} (BSCF) has been studied as a cathode material for Intermediate Temperature Solid Oxide Fuel Cell, due to its better ion and electron conduction. This work aims to study the synthesis of the compound obtained from the citrate-EDTA technique. Thermogravimetric analysis indicated the formation of the compound above 800 deg C. The materials calcined at temperatures of 700, 800 and 900 deg C for 5 h showed cubic pseudo-perovskite structure, according to the literature. By analysis of X-ray fluorescence were obtained powders with nominal chemical composition in the temperature range studied. The micrographs obtained by SEM and particle size distribution analysis showed the formation of particle with diameters below 1 micron. (author)

A Single-Transistor Active Pixel CMOS Image Sensor Architecture

International Nuclear Information System (INIS)

Zhang Guo-An; He Jin; Zhang Dong-Wei; Su Yan-Mei; Wang Cheng; Chen Qin; Liang Hai-Lang; Ye Yun

2012-01-01

A single-transistor CMOS active pixel image sensor (1 T CMOS APS) architecture is proposed. By switching the photosensing pinned diode, resetting and selecting can be achieved by diode pull-up and capacitive coupling pull-down of the source follower. Thus, the reset and selected transistors can be removed. In addition, the reset and selected signal lines can be shared to reduce the metal signal line, leading to a very high fill factor. The pixel design and operation principles are discussed in detail. The functionality of the proposed 1T CMOS APS architecture has been experimentally verified using a fabricated chip in a standard 0.35 μm CMOS AMIS technology

Self-calibrated humidity sensor in CMOS without post-processing.

Science.gov (United States)

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2012-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

OpenAIRE

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke

2011-01-01

A 1.1 μW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 μm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.

Vertical Bridgman growth and characterization of Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te (x=0.20, 0.30) single-crystal ingots

Energy Technology Data Exchange (ETDEWEB)

Bolotnikov, A. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, V. [Brookhaven National Lab. (BNL), Upton, NY (United States); Kopach, O. [Brookhaven National Lab. (BNL), Upton, NY (United States); Shcherbak, L. [Brookhaven National Lab. (BNL), Upton, NY (United States); Fochuk, P. [Brookhaven National Lab. (BNL), Upton, NY (United States); Filonenko, S. [Brookhaven National Lab. (BNL), Upton, NY (United States); James, R. [Brookhaven National Lab. (BNL), Upton, NY (United States)

2017-08-01

Solid-liquid phase transitions in Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te alloys with x = 0.20 and 0.30 were investigated by differential thermal analysis (DTA). The heating/cooling rates were 5 and 10 K/min with a melt dwell time of 10, 30 and 60 minutes. Cd<sub>0.95-xsub>Mn_xZn>0.05sub>Te (x=0.20, 0.30) single-crystal ingots were grown by the vertical Bridgman method guided using the DTA results. Te inclusions (1-20 microns), typical for CdTe and Cd(Zn)Te crystals, were observed in the ingots by infrared transmission microscopy. The measured X-ray diffraction patterns showed that all compositions are found to be in a single phase. Using current-voltage (I-V) measurements, the resistivity of the samples from each ingot was estimated to be about 10⁵ Ohm·cm. The optical transmission analysis demonstrated that the band-gap width of the investigated ingots increased from 1.77 to 1.88 eV with the increase of the MnTe content from 20 to 30 mol. %.

A first-principle investigation of spin-gapless semiconductivity, half-metallicity, and fully-compensated ferrimagnetism property in Mn{sub 2}ZnMg inverse Heusler compound

Energy Technology Data Exchange (ETDEWEB)

Wang, Xiaotian [School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130 (China); Institute for Superconducting & Electronic Materials (ISEM), University of Wollongong, Wollongong 2500 (Australia); Cheng, Zhenxiang, E-mail: cheng@uow.edu.au [Institute for Superconducting & Electronic Materials (ISEM), University of Wollongong, Wollongong 2500 (Australia); Khenata, Rabah [Laboratoire de Physique Quantique, de la Matière et de la Modélisation Mathématique (LPQ3M), Université de Mascara, Mascara 29000 (Algeria); Rozale, Habib [Condensed Matter and Sustainable Development Laboratory, Physics Department, University of Sidi-Bel-Abbès, 22000 Sidi-Bel-Abbès (Algeria); Wang, Jianli [Institute for Superconducting & Electronic Materials (ISEM), University of Wollongong, Wollongong 2500 (Australia); Wang, Liying; Guo, Ruikang [School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130 (China); Liu, Guodong, E-mail: gdliu1978@126.com [School of Material Sciences and Engineering, Hebei University of Technology, Tianjin 300130 (China)

2017-02-01

Recently, spin-gapless semiconductors (SGSs) and half-metallic materials (HMMs) have received considerable interest in the fields of materials sciences and solid-state physics because they can provide a high degree of spin polarization in electron transport. The results on band structure calculations reveal that the metallic fully-compensated ferrimagnet (M-FCF) Mn{sub 2}ZnMg becomes half-metallic fully-compensated ferrimagnet (HM-FCF), fully-compensated ferrimagnetic semiconductor (FCF-S) and fully-compensated ferrimagnetic spin-gapless semiconductor (FCF-SGS) if the uniform strain applied. However, the metallic fully-compensated ferrimagnetism property of the Mn{sub 2}ZnMg is robust to the tetragonalization. The structure stability based on the calculations of the cohesion energy and the formation energy of this compound has been tested. Furthermore, a magnetic state transition from antiferromagentic (AFM) state to non-magnetic (NM) state can be observed at the lattice constant of 5.20 Å. - Highlights: • Mn{sub 2}ZnMg is a M-FCF at its equilibrium lattice constant. • We study the effect of uniform strain on the physical nature transition of Mn{sub 2}ZnMg. • The M-FCF property of the Mn{sub 2}ZnMg is robust to the tetragonalization. • A magnetic phase transition occurs at 5.20 Å.

Model of hot-carrier induced degradation in ultra-deep sub-micrometer nMOSFET

International Nuclear Information System (INIS)

Lei Xiao-Yi; Liu Hong-Xia; Zhang Yue; Ma Xiao-Hua; Hao Yue

2014-01-01

The degradation produced by hot carrier (HC) in ultra-deep sub-micron n-channel metal oxide semiconductor field effect transistor (nMOSFET) has been analyzed in this paper. The generation of negatively charged interface states is the predominant mechanism for the ultra-deep sub-micron nMOSFET. According to our lifetime model of p-channel MOFET (pMOFET) that was reported in a previous publication, a lifetime prediction model for nMOSFET is presented and the parameters in the model are extracted. For the first time, the lifetime models of nMOFET and pMOSFET are unified. In addition, the model can precisely predict the lifetime of the ultra-deep sub-micron nMOSFET and pMOSFET. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Radiation-hardened bulk CMOS technology

International Nuclear Information System (INIS)

Dawes, W.R. Jr.; Habing, D.H.

1979-01-01

The evolutionary development of a radiation-hardened bulk CMOS technology is reviewed. The metal gate hardened CMOS status is summarized, including both radiation and reliability data. The development of a radiation-hardened bulk silicon gate process which was successfully implemented to a commercial microprocessor family and applied to a new, radiation-hardened, LSI standard cell family is also discussed. The cell family is reviewed and preliminary characterization data is presented. Finally, a brief comparison of the various radiation-hardened technologies with regard to performance, reliability, and availability is made

CMOS/SOS processing

Science.gov (United States)

Ramondetta, P.

1980-01-01

Report describes processes used in making complementary - metal - oxide - semiconductor/silicon-on-sapphire (CMOS/SOS) integrated circuits. Report lists processing steps ranging from initial preparation of sapphire wafers to final mapping of "good" and "bad" circuits on a wafer.

CMOS-NEMS Copper Switches Monolithically Integrated Using a 65 nm CMOS Technology

Directory of Open Access Journals (Sweden)

Jose Luis Muñoz-Gamarra

2016-02-01

Full Text Available This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS relays using a commercial complementary metal oxide semiconductor (CMOS technology (ST 65 nm following an intra CMOS-MEMS approach. We report experimental demonstration of contact-mode nano-electromechanical switches obtaining low operating voltage (5.5 V, good ION/IOFF (103 ratio, abrupt subthreshold swing (4.3 mV/decade and minimum dimensions (3.50 μm × 100 nm × 180 nm, and gap of 100 nm. With these dimensions, the operable Cell area of the switch will be 3.5 μm (length × 0.2 μm (100 nm width + 100 nm gap = 0.7 μm2 which is the smallest reported one using a top-down fabrication approach.

Diode laser trabeculoplasty in open angle glaucoma: 50 micron vs. 100 micron spot size.

Science.gov (United States)

Veljko, Andreić; Miljković, Aleksandar; Babić, Nikola

2011-01-01

The study was aimed at evaluating the efficacy of diode laser trabeculoplsaty in lowering intraocular pressure in patients with both primary open-angle glaucoma and exfoliation glaucoma by using different size of laser spot. This six-month, unmasked, controlled, prospective study included sixty-two patients with the same number of eyes, who were divided into two groups. Trabeculoplasty was performed with 50 micron and 100 micron laser spot size in the group I and group II, respectively. Other laser parameters were the same for both groups: the wave length of 532 nm, 0.1 second single emission with the power of 600-1200 mW was applied on the 180 degrees of the trabeculum. The mean intraocular pressure decrease in the 50 micron group (group 1) on day 7 was 24% from the baseline and after six-month follow-up period the intraocular pressure decrease was 29.8% (p < 0.001). In the 100 micron group (group II), the mean intraocular pressure decrease on day 7 was 26.5% and after six months it was 39% (p < 0.001).

Simulations of depleted CMOS sensors for high-radiation environments

CERN Document Server

Liu, J.; Bhat, S.; Breugnon, P.; Caicedo, I.; Chen, Z.; Degerli, Y.; Godiot-Basolo, S.; Guilloux, F.; Hemperek, T.; Hirono, T.; Hügging, F.; Krüger, H.; Moustakas, K.; Pangaud, P.; Rozanov, A.; Rymaszewski, P.; Schwemling, P.; Wang, M.; Wang, T.; Wermes, N.; Zhang, L.

2017-01-01

After the Phase II upgrade for the Large Hadron Collider (LHC), the increased luminosity requests a new upgraded Inner Tracker (ITk) for the ATLAS experiment. As a possible option for the ATLAS ITk, a new pixel detector based on High Voltage/High Resistivity CMOS (HV/HR CMOS) technology is under study. Meanwhile, a new CMOS pixel sensor is also under development for the tracker of Circular Electron Position Collider (CEPC). In order to explore the sensor electric properties, such as the breakdown voltage and charge collection efficiency, 2D/3D Technology Computer Aided Design (TCAD) simulations have been performed carefully for the above mentioned both of prototypes. In this paper, the guard-ring simulation for a HV/HR CMOS sensor developed for the ATLAS ITk and the charge collection efficiency simulation for a CMOS sensor explored for the CEPC tracker will be discussed in details. Some comparisons between the simulations and the latest measurements will also be addressed.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.; Gumus, Abdurrahman; Nassar, Joanna M.; Hussain, Muhammad Mustafa

2018-01-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications

KAUST Repository

Khan, Sherjeel M.

2018-02-27

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen.

Prevention of CMOS latch-up by gold doping

International Nuclear Information System (INIS)

Dawes, W.R.; Derbenwick, G.F.

1976-01-01

CMOS integrated circuits fabricated with the bulk silicon technology typically exhibit latch-up effects in either an ionizing radiation environment or an overvoltage stress condition. The latch-up effect has been shown to arise from regenerative switching, analogous to an SCR, in the adjacent parasitic bipolar transistors formed during the fabrication of a bulk CMOS device. Once latch-up has been initiated, it is usually self-sustaining and eventually destructive. Naturally, the circuit is inoperative during latch-up. This paper discusses a generic process technique that prevents the latch-up mechanism in CMOS devices

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Toward CMOS image sensor based glucose monitoring.

Science.gov (United States)

Devadhasan, Jasmine Pramila; Kim, Sanghyo

2012-09-07

Complementary metal oxide semiconductor (CMOS) image sensor is a powerful tool for biosensing applications. In this present study, CMOS image sensor has been exploited for detecting glucose levels by simple photon count variation with high sensitivity. Various concentrations of glucose (100 mg dL(-1) to 1000 mg dL(-1)) were added onto a simple poly-dimethylsiloxane (PDMS) chip and the oxidation of glucose was catalyzed with the aid of an enzymatic reaction. Oxidized glucose produces a brown color with the help of chromogen during enzymatic reaction and the color density varies with the glucose concentration. Photons pass through the PDMS chip with varying color density and hit the sensor surface. Photon count was recognized by CMOS image sensor depending on the color density with respect to the glucose concentration and it was converted into digital form. By correlating the obtained digital results with glucose concentration it is possible to measure a wide range of blood glucose levels with great linearity based on CMOS image sensor and therefore this technique will promote a convenient point-of-care diagnosis.

High-voltage CMOS detectors

International Nuclear Information System (INIS)

Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

2016-01-01

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

High-voltage CMOS detectors

Energy Technology Data Exchange (ETDEWEB)

Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

2016-07-11

High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

Low-phonon-frequency chalcogenide crystalline hosts for rare earth lasers operating beyond three microns

Science.gov (United States)

Payne, Stephen A.; Page, Ralph H.; Schaffers, Kathleen I.; Nostrand, Michael C.; Krupke, William F.; Schunemann, Peter G.

2000-01-01

The invention comprises a RE-doped MA.sub.2 X.sub.4 crystalline gain medium, where M includes a divalent ion such as Mg, Ca, Sr, Ba, Pb, Eu, or Yb; A is selected from trivalent ions including Al, Ga, and In; X is one of the chalcogenide ions S, Se, and Te; and RE represents the trivalent rare earth ions. The MA.sub.2 X.sub.4 gain medium can be employed in a laser oscillator or a laser amplifier. Possible pump sources include diode lasers, as well as other laser pump sources. The laser wavelengths generated are greater than 3 microns, as becomes possible because of the low phonon frequency of this host medium. The invention may be used to seed optical devices such as optical parametric oscillators and other lasers.

Efficient CW diode-pumped Tm, Ho:YLF laser with tunability near 2.067 microns

Science.gov (United States)

Mcguckin, B. T.; Menzies, Robert T.

1992-01-01

A conversion efficiency of 42 percent and slope efficiency of approximately 60 percent relative to absorbed pump power are reported from a continuous wave diode-pumped Tm, Ho:YLF laser at 2 microns with output power of 84 mW at sub-ambient temperatures. The emission spectrum is etalon tunable over a range of 16/cm centered on 2.067 microns, with fine tuning capability of the transition frequency with crystal temperature at a measured rate of about -0.03/cm-K. The effective emission cross section is measured to be 5 x 10 exp -21 sq cm. These and other aspects of the laser performance are discussed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications.

Large Format CMOS-based Detectors for Diffraction Studies

Science.gov (United States)

Thompson, A. C.; Nix, J. C.; Achterkirchen, T. G.; Westbrook, E. M.

2013-03-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Large Format CMOS-based Detectors for Diffraction Studies

International Nuclear Information System (INIS)

Thompson, A C; Westbrook, E M; Nix, J C; Achterkirchen, T G

2013-01-01

Complementary Metal Oxide Semiconductor (CMOS) devices are rapidly replacing CCD devices in many commercial and medical applications. Recent developments in CMOS fabrication have improved their radiation hardness, device linearity, readout noise and thermal noise, making them suitable for x-ray crystallography detectors. Large-format (e.g. 10 cm × 15 cm) CMOS devices with a pixel size of 100 μm × 100 μm are now becoming available that can be butted together on three sides so that very large area detector can be made with no dead regions. Like CCD systems our CMOS systems use a GdOS:Tb scintillator plate to convert stopping x-rays into visible light which is then transferred with a fiber-optic plate to the sensitive surface of the CMOS sensor. The amount of light per x-ray on the sensor is much higher in the CMOS system than a CCD system because the fiber optic plate is only 3 mm thick while on a CCD system it is highly tapered and much longer. A CMOS sensor is an active pixel matrix such that every pixel is controlled and readout independently of all other pixels. This allows these devices to be readout while the sensor is collecting charge in all the other pixels. For x-ray diffraction detectors this is a major advantage since image frames can be collected continuously at up 20 Hz while the crystal is rotated. A complete diffraction dataset can be collected over five times faster than with CCD systems with lower radiation exposure to the crystal. In addition, since the data is taken fine-phi slice mode the 3D angular position of diffraction peaks is improved. We have developed a cooled 6 sensor CMOS detector with an active area of 28.2 × 29.5 cm with 100 μm × 100 μm pixels and a readout rate of 20 Hz. The detective quantum efficiency exceeds 60% over the range 8-12 keV. One, two and twelve sensor systems are also being developed for a variety of scientific applications. Since the sensors are butt able on three sides, even larger systems could be built at

Avalanche-mode silicon LEDs for monolithic optical coupling in CMOS technology

NARCIS (Netherlands)

Dutta, Satadal

2017-01-01

Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit (IC) technology is the most commercially successful platform in modern electronic and control systems. So called "smart power" technologies such as Bipolar CMOS DMOS (BCD), combine the computational power of CMOS with high voltage

Design of CMOS imaging system based on FPGA

Science.gov (United States)

Hu, Bo; Chen, Xiaolai

2017-10-01

In order to meet the needs of engineering applications for high dynamic range CMOS camera under the rolling shutter mode, a complete imaging system is designed based on the CMOS imaging sensor NSC1105. The paper decides CMOS+ADC+FPGA+Camera Link as processing architecture and introduces the design and implementation of the hardware system. As for camera software system, which consists of CMOS timing drive module, image acquisition module and transmission control module, the paper designs in Verilog language and drives it to work properly based on Xilinx FPGA. The ISE 14.6 emulator ISim is used in the simulation of signals. The imaging experimental results show that the system exhibits a 1280*1024 pixel resolution, has a frame frequency of 25 fps and a dynamic range more than 120dB. The imaging quality of the system satisfies the requirement of the index.

CMOS Electrochemical Instrumentation for Biosensor Microsystems: A Review

Directory of Open Access Journals (Sweden)

Haitao Li

2016-12-01

Full Text Available Modern biosensors play a critical role in healthcare and have a quickly growing commercial market. Compared to traditional optical-based sensing, electrochemical biosensors are attractive due to superior performance in response time, cost, complexity and potential for miniaturization. To address the shortcomings of traditional benchtop electrochemical instruments, in recent years, many complementary metal oxide semiconductor (CMOS instrumentation circuits have been reported for electrochemical biosensors. This paper provides a review and analysis of CMOS electrochemical instrumentation circuits. First, important concepts in electrochemical sensing are presented from an instrumentation point of view. Then, electrochemical instrumentation circuits are organized into functional classes, and reported CMOS circuits are reviewed and analyzed to illuminate design options and performance tradeoffs. Finally, recent trends and challenges toward on-CMOS sensor integration that could enable highly miniaturized electrochemical biosensor microsystems are discussed. The information in the paper can guide next generation electrochemical sensor design.

Synthesis, characterization and electrocatalytic properties of delafossite CuGaO{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Jahangeer [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States); Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Mao, Yuanbing, E-mail: yuanbing.mao@utrgv.edu [Department of Chemistry, University of Texas Rio Grande Valley, 1201 West University Drive, Edinburg, TX 78539 (United States)

2016-10-15

Delafossite CuGaO{sub 2} has been employed as photocatalysts for solar cells, but their electrocatalytic properties have not been extensively studied, especially no comparison among samples made by different synthesis routes. Herein, we first reported the successful synthesis of delafossite CuGaO{sub 2} particles with three different morphologies, i.e. nanocrystalline hexagons, sub-micron sized plates and micron–sized particles by a modified hydrothermal method at 190 °C for 60 h [1–3], a sono-chemical method followed by firing at 850 °C for 48 h, and a solid state route at 1150 °C, respectively. Morphology, composition and phase purity of the synthesized samples was confirmed by powder X-ray diffraction and Raman spectroscopic studies, and then their electrocatalytic performance as active and cost effective electrode materials to the oxygen and hydrogen evolution reactions in 0.5 M KOH electrolyte versus Ag/AgCl was investigated and compared under the same conditions for the first time. The nanocrystalline CuGaO{sub 2} hexagons show enhanced electrocatalytic activity than the counterpart sub-micron sized plates and micron-sized particles. - Graphical abstract: Representative delafossite CuGaO2 samples with sub-micron sized plate and nanocrystalline hexagon morphologies accompanying with chronoamperometric voltammograms for oxygen evolution reaction and hydrogen evolution reaction in 0.5 M KOH electrolyte after purged with N{sub 2} gas. - Highlights: • Delafossite CuGaO{sub 2} with three morphologies has been synthesized. • Phase purity of the synthesized samples was confirmed. • Comparison on their electrocatalytic properties was made for the first time. • Their use as electrodes for oxygen and hydrogen evolution reactions was evaluated. • Nanocrystalline CuGaO{sub 2} hexagons show highest electrocatalytic activity.

E-Beam Effects on CMOS Active Pixel Sensors

International Nuclear Information System (INIS)

Kang, Dong Ook; Jo, Gyu Seong; Kim, Hyeon Daek; Kim, Hyunk Taek; Kim, Jong Yeol; Kim, Chan Kyu

2011-01-01

Three different CMOS active pixel structures manufactured in a deep submicron process have been evaluated with electron beam. The devices were exposed to 1 MeV electron beam up to 5kGy. Dark current increased after E-beam irradiation differently at each pixel structure. Dark current change is dependent on CMOS pixel structures. CMOS image sensors are now good candidates in demanding applications such as medical image sensor, particle detection and space remote sensing. In these situations, CISs are exposed to high doses of radiation. In fact radiation is known to generate trapped charge in CMOS oxides. It can lead to threshold voltage shifts and current leakages in MOSFETs and dark current increase in photodiodes. We studied ionizing effects in three types of CMOS APSs fabricated by 0.25 CMOS process. The devices were irradiated by a Co 60 source up to 50kGy. All irradiation took place at room temperature. The dark current in the three different pixels exhibits increase with electron beam exposure. From the above figure, the change of dark current is dependent on the pixel structure. Double junction structure has shown relatively small increase of dark current after electron beam irradiation. The dark current in the three different pixels exhibits increase with electron beam exposure. The contribution of the total ionizing dose to the dark current increase is small here, since the devices were left unbiased during the electron beam irradiation. Radiation hardness in dependent on the pixel structures. Pixel2 is relatively vulnerable to radiation exposure. Pixel3 has radiation hardened structure

Monolithic integration of micromachined sensors and CMOS circuits based on SOI technologies

International Nuclear Information System (INIS)

Yu Xiaomei; Tang Yaquan; Zhang Haitao

2008-01-01

This note presents a novel way to monolithically integrate micro-cantilever sensors and signal conditioning circuits by combining SOI CMOS and SOI micromachining technologies. In order to improve the sensor performance and reduce the system volume, an integrated sensor system composed of a piezoresistive cantilever array, a temperature-compensation current reference, a digitally controlled multiplexer and an instrument amplifier is designed and finally fabricated. A post-SOI CMOS process is developed to realize the integrated sensor system which is based on a standard CMOS process with one more mask to define the cantilever structure at the end of the process. Measurements on the finished SOI CMOS devices and circuits show that the integration process has good compatibility both for the cantilever sensors and for the CMOS circuits, and the SOI CMOS integration process can decrease about 25% sequences compared with the bulk silicon CMOS process. (note)

CMOS-compatible spintronic devices: a review

Science.gov (United States)

Makarov, Alexander; Windbacher, Thomas; Sverdlov, Viktor; Selberherr, Siegfried

2016-11-01

For many decades CMOS devices have been successfully scaled down to achieve higher speed and increased performance of integrated circuits at lower cost. Today’s charge-based CMOS electronics encounters two major challenges: power dissipation and variability. Spintronics is a rapidly evolving research and development field, which offers a potential solution to these issues by introducing novel ‘more than Moore’ devices. Spin-based magnetoresistive random-access memory (MRAM) is already recognized as one of the most promising candidates for future universal memory. Magnetic tunnel junctions, the main elements of MRAM cells, can also be used to build logic-in-memory circuits with non-volatile storage elements on top of CMOS logic circuits, as well as versatile compact on-chip oscillators with low power consumption. We give an overview of CMOS-compatible spintronics applications. First, we present a brief introduction to the physical background considering such effects as magnetoresistance, spin-transfer torque (STT), spin Hall effect, and magnetoelectric effects. We continue with a comprehensive review of the state-of-the-art spintronic devices for memory applications (STT-MRAM, domain wall-motion MRAM, and spin-orbit torque MRAM), oscillators (spin torque oscillators and spin Hall nano-oscillators), logic (logic-in-memory, all-spin logic, and buffered magnetic logic gate grid), sensors, and random number generators. Devices with different types of resistivity switching are analyzed and compared, with their advantages highlighted and challenges revealed. CMOS-compatible spintronic devices are demonstrated beginning with predictive simulations, proceeding to their experimental confirmation and realization, and finalized by the current status of application in modern integrated systems and circuits. We conclude the review with an outlook, where we share our vision on the future applications of the prospective devices in the area.

Sub-micron particle number size distribution characteristics at two urban locations in Leicester

Science.gov (United States)

Hama, Sarkawt M. L.; Cordell, Rebecca L.; Kos, Gerard P. A.; Weijers, E. P.; Monks, Paul S.

2017-09-01

The particle number size distribution (PNSD) of atmospheric particles not only provides information about sources and atmospheric processing of particles, but also plays an important role in determining regional lung dose. Owing to the importance of PNSD in understanding particulate pollution two short-term campaigns (March-June 2014) measurements of sub-micron PNSD were conducted at two urban background locations in Leicester, UK. At the first site, Leicester Automatic Urban Rural Network (AURN), the mean number concentrations of nucleation, Aitken, accumulation modes, the total particles, equivalent black carbon (eBC) mass concentrations were 2002, 3258, 1576, 6837 # cm-3, 1.7 μg m-3, respectively, and at the second site, Brookfield (BF), were 1455, 2407, 874, 4737 # cm-3, 0.77 μg m-3, respectively. The total particle number was dominated by the nucleation and Aitken modes, with both consisting of 77%, and 81% of total number concentrations at AURN and BF sites, respectively. This behaviour could be attributed to primary emissions (traffic) of ultrafine particles and the temporal evolution of mixing layer. The size distribution at the AURN site shows bimodal distribution at 22 nm with a minor peak at 70 nm. The size distribution at BF site, however, exhibits unimodal distribution at 35 nm. This study has for the first time investigated the effect of Easter holiday on PNSD in UK. The temporal variation of PNSD demonstrated a good degree of correlation with traffic-related pollutants (NOX, and eBC at both sites). The meteorological conditions, also had an impact on the PNSD and eBC at both sites. During the measurement period, the frequency of NPF events was calculated to be 13.3%, and 22.2% at AURN and BF sites, respectively. The average value of formation and growth rates of nucleation mode particles were 1.3, and 1.17 cm-3 s-1 and 7.42, and 5.3 nm h-1 at AURN, and BF sites, respectively. It can suggested that aerosol particles in Leicester originate mainly

Synthesis of free-standing MnO{sub 2}/reduced graphene oxide membranes and electrochemical investigation of their performances as anode materials for half and full lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaojun [Northwest University, Key Laboratory of Synthetic and Nature Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science (China); Wang, Gang [Northwest University, National Key Laboratory of Photoelectric Technology and Functional Materials (Culture Base), National Photoelectric Technology and Functional Materials & Application International Cooperation Base, Institute of Photonics & Photon-Technology (China); Wang, Hui, E-mail: huiwang@nwu.edu.cn [Northwest University, Key Laboratory of Synthetic and Nature Functional Molecule Chemistry (Ministry of Education), College of Chemistry & Materials Science (China)

2016-10-15

MnO{sub 2} nanotubes/reduced graphene oxide (MnO{sub 2}/RGO) membranes with different MnO{sub 2} contents are successfully synthesized by a facile two-step method including vacuum filtration and subsequent thermal reduction route. The MnO{sub 2} nanotubes obtained are 38 nm in diameter and homogeneously imbedded in RGO sheets as spacers. The synthesized MnO{sub 2}/RGO membranes exhibit excellent mechanical flexibilities and free-standing properties. Using the membranes directly as anode materials for lithium batteries (LIBs), the membranes for half LIBs show superb cycling stabilities and rate performances. Importantly, the electrochemical performances of MnO{sub 2}/RGO membranes show a strong dependence on the MnO{sub 2} nanotube contents in the hybrids. In addition, our results show that the hybrid membranes with 49.0 wt% MnO{sub 2} nanotube in half LIBs achieve a high reversible capacity of 1006.7 mAh g{sup −1} after 100 cycles at a current density of 0.1 A g{sup −1}, which is higher lithium storage capacity than that of reported MnO{sub 2}-carbon electrodes. Furthermore, the synthesized full cell (MnO{sub 2}/RGO//LiCoO{sub 2}) system also exhibit excellent electrochemical performances, which can be attributed to the unique microstructures of MnO{sub 2} and GRO, coupled with the strong synergistic interaction between MnO{sub 2} nanotubes and GRO sheets.

CMOS Enabled Microfluidic Systems for Healthcare Based Applications.

Science.gov (United States)

Khan, Sherjeel M; Gumus, Abdurrahman; Nassar, Joanna M; Hussain, Muhammad M

2018-04-01

With the increased global population, it is more important than ever to expand accessibility to affordable personalized healthcare. In this context, a seamless integration of microfluidic technology for bioanalysis and drug delivery and complementary metal oxide semiconductor (CMOS) technology enabled data-management circuitry is critical. Therefore, here, the fundamentals, integration aspects, and applications of CMOS-enabled microfluidic systems for affordable personalized healthcare systems are presented. Critical components, like sensors, actuators, and their fabrication and packaging, are discussed and reviewed in detail. With the emergence of the Internet-of-Things and the upcoming Internet-of-Everything for a people-process-data-device connected world, now is the time to take CMOS-enabled microfluidics technology to as many people as possible. There is enormous potential for microfluidic technologies in affordable healthcare for everyone, and CMOS technology will play a major role in making that happen. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Decal electronics for printed high performance cmos electronic systems

KAUST Repository

Hussain, Muhammad Mustafa; Sevilla, Galo Torres; Cordero, Marlon Diaz; Kutbee, Arwa T.

2017-01-01

High performance complementary metal oxide semiconductor (CMOS) electronics are critical for any full-fledged electronic system. However, state-of-the-art CMOS electronics are rigid and bulky making them unusable for flexible electronic applications

CMOS Thermal Ox and Diffusion Furnace: Tystar Tytan 2000

Data.gov (United States)

Federal Laboratory Consortium — Description:CORAL Names: CMOS Wet Ox, CMOS Dry Ox, Boron Doping (P-type), Phos. Doping (N-Type)This four-stack furnace bank is used for the thermal growth of silicon...

CMOS Compressed Imaging by Random Convolution

OpenAIRE

Jacques, Laurent; Vandergheynst, Pierre; Bibet, Alexandre; Majidzadeh, Vahid; Schmid, Alexandre; Leblebici, Yusuf

2009-01-01

We present a CMOS imager with built-in capability to perform Compressed Sensing. The adopted sensing strategy is the random Convolution due to J. Romberg. It is achieved by a shift register set in a pseudo-random configuration. It acts as a convolutive filter on the imager focal plane, the current issued from each CMOS pixel undergoing a pseudo-random redirection controlled by each component of the filter sequence. A pseudo-random triggering of the ADC reading is finally applied to comp...

The challenge of sCMOS image sensor technology to EMCCD

Science.gov (United States)

Chang, Weijing; Dai, Fang; Na, Qiyue

2018-02-01

In the field of low illumination image sensor, the noise of the latest scientific-grade CMOS image sensor is close to EMCCD, and the industry thinks it has the potential to compete and even replace EMCCD. Therefore we selected several typical sCMOS and EMCCD image sensors and cameras to compare their performance parameters. The results show that the signal-to-noise ratio of sCMOS is close to EMCCD, and the other parameters are superior. But signal-to-noise ratio is very important for low illumination imaging, and the actual imaging results of sCMOS is not ideal. EMCCD is still the first choice in the high-performance application field.

Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

Science.gov (United States)

Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

2010-10-01

Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

Variationen und ihre Kompensation in CMOS Digitalschaltungen

OpenAIRE

Baumann, Thomas

2010-01-01

Variationen bei der Herstellung und während des Betriebs von CMOS Schaltungen beeinflussen deren Geschwindigkeit und erschweren die Verifikation der in der Spezifikation zugesicherten Eigenschaften. In dieser Arbeit wird eine abstraktionsebenenübergreifende Vorgehensweise zur Abschätzung des Einflusses von Prozess- und betriebsbedingten Umgebungsvariationen auf die Geschwindigkeit einer Schaltung vorgestellt. Neben Untersuchungen der Laufzeitsensitivität in low-power CMOS Technologien von...

VLSI System Implementation of 200 MHz, 8-bit, 90nm CMOS Arithmetic and Logic Unit (ALU Processor Controller

Directory of Open Access Journals (Sweden)

Fazal NOORBASHA

2012-08-01

Full Text Available In this present study includes the Very Large Scale Integration (VLSI system implementation of 200MHz, 8-bit, 90nm Complementary Metal Oxide Semiconductor (CMOS Arithmetic and Logic Unit (ALU processor control with logic gate design style and 0.12µm six metal 90nm CMOS fabrication technology. The system blocks and the behaviour are defined and the logical design is implemented in gate level in the design phase. Then, the logic circuits are simulated and the subunits are converted in to 90nm CMOS layout. Finally, in order to construct the VLSI system these units are placed in the floor plan and simulated with analog and digital, logic and switch level simulators. The results of the simulations indicates that the VLSI system can control different instructions which can divided into sub groups: transfer instructions, arithmetic and logic instructions, rotate and shift instructions, branch instructions, input/output instructions, control instructions. The data bus of the system is 16-bit. It runs at 200MHz, and operating power is 1.2V. In this paper, the parametric analysis of the system, the design steps and obtained results are explained.

Nanomechanical testing of circular freestanding polymer films with sub-micron thickness

International Nuclear Information System (INIS)

Maner, Kyle C.; Begley, Matthew R.; Oliver, Warren C.

2004-01-01

This paper describes techniques to create freestanding films over perfectly circular spans (windows) and measure their mechanical properties using instrumented nanoindentation. Test samples were created by spin-casting polymer films over glass plates with embedded fibers, which were subsequently etched using a relatively weak acid to leave freestanding circular spans. The freestanding spans were tested using an instrumented nanoindenter over a wide range of applied loads and displacements. Material properties can be extracted from measured load-deflection responses using straightforward models for point-loads on circular plates or membranes. Results are presented for poly(methyl methacrylate) and poly(2,6,dimethyl,1,4,phenylene ether) films with thickness ranging from 350 to 750 nm. The properties derived from freestanding tests are compared with traditional nanoindentation of films on intact substrates. The freestanding approach has key advantages for characterizing micron-scale behavior of compliant materials, notably greater ease and applicability of sample preparation over other micro-fabrication techniques and straightforward analytical or numerical models

CMOS Integrated Carbon Nanotube Sensor

International Nuclear Information System (INIS)

Perez, M. S.; Lerner, B.; Boselli, A.; Lamagna, A.; Obregon, P. D. Pareja; Julian, P. M.; Mandolesi, P. S.; Buffa, F. A.

2009-01-01

Recently carbon nanotubes (CNTs) have been gaining their importance as sensors for gases, temperature and chemicals. Advances in fabrication processes simplify the formation of CNT sensor on silicon substrate. We have integrated single wall carbon nanotubes (SWCNTs) with complementary metal oxide semiconductor process (CMOS) to produce a chip sensor system. The sensor prototype was designed and fabricated using a 0.30 um CMOS process. The main advantage is that the device has a voltage amplifier so the electrical measure can be taken and amplified inside the sensor. When the conductance of the SWCNTs varies in response to media changes, this is observed as a variation in the output tension accordingly.

CMOS analog circuit design

CERN Document Server

Allen, Phillip E

1987-01-01

This text presents the principles and techniques for designing analog circuits to be implemented in a CMOS technology. The level is appropriate for seniors and graduate students familiar with basic electronics, including biasing, modeling, circuit analysis, and some familiarity with frequency response. Students learn the methodology of analog integrated circuit design through a hierarchically-oriented approach to the subject that provides thorough background and practical guidance for designing CMOS analog circuits, including modeling, simulation, and testing. The authors' vast industrial experience and knowledge is reflected in the circuits, techniques, and principles presented. They even identify the many common pitfalls that lie in the path of the beginning designer--expert advice from veteran designers. The text mixes the academic and practical viewpoints in a treatment that is neither superficial nor overly detailed, providing the perfect balance.

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Rimoldi, Marco; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages, high resistivity wafers for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R$\\&$D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this presentation the challenges for the usage of CMOS pixel...

Characterization of active CMOS sensors for capacitively coupled pixel detectors

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Gonella, Laura; Janssen, Jens; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Wermes, Norbert [Institute of Physics, University of Bonn (Germany); Peric, Ivan [Institut fuer Prozessdatenverarbeitung und Elektronik, Karlsruher Institut fuer Technologie, Karlsruhe (Germany)

2015-07-01

Active CMOS pixel sensor is one of the most attractive candidates for detectors of upcoming particle physics experiments. In contrast to conventional sensors of hybrid detectors, signal processing circuit can be integrated in the active CMOS sensor. The characterization and optimization of the pixel circuit are indispensable to obtain a good performance from the sensors. The prototype chips of the active CMOS sensor were fabricated in the AMS 180nm and L-Foundry 150 nm CMOS processes, respectively a high voltage and high resistivity technology. Both chips have a charge sensitive amplifier and a comparator in each pixel. The chips are designed to be glued to the FEI4 pixel readout chip. The signals from 3 pixels of the prototype chips are capacitively coupled to the FEI4 input pads. We have performed lab tests and test beams to characterize the prototypes. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Reduction of CMOS Image Sensor Read Noise to Enable Photon Counting.

Science.gov (United States)

Guidash, Michael; Ma, Jiaju; Vogelsang, Thomas; Endsley, Jay

2016-04-09

Recent activity in photon counting CMOS image sensors (CIS) has been directed to reduction of read noise. Many approaches and methods have been reported. This work is focused on providing sub 1 e(-) read noise by design and operation of the binary and small signal readout of photon counting CIS. Compensation of transfer gate feed-through was used to provide substantially reduced CDS time and source follower (SF) bandwidth. SF read noise was reduced by a factor of 3 with this method. This method can be applied broadly to CIS devices to reduce the read noise for small signals to enable use as a photon counting sensor.

Long term ionization response of several BiCMOS VLSIC technologies

International Nuclear Information System (INIS)

Pease, R.L.; Combs, W.; Clark, S.

1992-01-01

BiCMOS is emerging as a strong competitor to CMOS for gate arrays and memories because of its performance advantages for the same feature size. In this paper, the authors examine the long term ionization response of five BiCMOS technologies by characterizing test structures which emphasize the various failure modes of CMOS and bipolar. The primary failure modes are found to be associated with the recessed field oxide isolation; edge leakage in the n channel MOSFETs and buried layer to buried layer leakage in the bipolar. The ionization failure thresholds for worst case bias were in the range of 5-20 Krad(Si) for both failure modes in all five technologies

Chemical synthesis of Fe/Fe{sub 3}O{sub 4} core-shell composites with enhanced soft magnetic performances

Energy Technology Data Exchange (ETDEWEB)

Yang, Bai, E-mail: byang@buaa.edu.cn [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Li, Xiaopan [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China); Yang, Xueying [Hi-tech Industry Standardization Institute, Hubei Standardization and Quality Institution, Wuhan 430061 (China); Yu, Ronghai [Key Laboratory of Aerospace Advanced Materials and Performance, Ministry of Education, School of Materials Science and Engineering, Beihang University, Beijing 100191 (China)

2017-04-15

The large-grain Fe/Fe{sub 3}O{sub 4} composite particles with average size of about 1.2 µm have been fabricated by a facile one-step solvothermal method. The formation of high-purity Fe{sub 3}O{sub 4} as the shells (90.14 wt%) and α-Fe as the cores (9.86 wt%) in the Fe/Fe{sub 3}O{sub 4} composites leads to their high saturation magnetization of 119.6 A m{sup 2} Kg{sup -1}. Very low coercivity of 30 Oe is obtained in the composites due to their uniform cubic-shaped morphologies. Compared with Fe-based nanosized particles, these micron-sized magnetic Fe/Fe{sub 3}O{sub 4} composites exhibit high air stability and good compactibility with high compressed density of 5.9 g cm{sup -3}. The fully compacted sample shows good soft magnetic properties including high magnetic induction B{sub 1.2k} {sub (H=1200} {sub A/m)} of 540 mT and good frequency-dependent magnetic properties with operating frequency up to 50 MHz superior to those of the most traditional soft magnetic ferrites, which promotes their potential applications in high-frequency and high-power magnetic devices. - Highlights: • Micron-sized Fe/Fe{sub 3}O{sub 4} composites are prepared by a one-step solvothermal method. • High saturation magnetization and low coercivity are obtained in the composites. • Good air stability and high bulk density occurs in the composites. • High magnetic induction and good frequency-dependent properties are achieved.

MICRON-SIZED POLYMER PARTICLES FROM TANZANIAN ...

African Journals Online (AJOL)

Micron sized polymeric particles were prepared from cashew nut shell liquid and subsequently functionalized to produce micron-sized carboxylated cation exchange resin (MCCER). By titrimetry and analytical procedures employing atomic absorption spectrometry, an assessment of the cation exchange capability of the ...

First principle leakage current reduction technique for CMOS devices

CSIR Research Space (South Africa)

Tsague, HD

2015-12-01

Full Text Available This paper presents a comprehensive study of leakage reduction techniques applicable to CMOS based devices. In the process, mathematical equations that model the power-performance trade-offs in CMOS logic circuits are presented. From those equations...

Ion traps fabricated in a CMOS foundry

Energy Technology Data Exchange (ETDEWEB)

Mehta, K. K.; Ram, R. J. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Eltony, A. M.; Chuang, I. L. [Center for Ultracold Atoms, Research Laboratory of Electronics and Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Bruzewicz, C. D.; Sage, J. M., E-mail: jsage@ll.mit.edu; Chiaverini, J., E-mail: john.chiaverini@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2014-07-28

We demonstrate trapping in a surface-electrode ion trap fabricated in a 90-nm CMOS (complementary metal-oxide-semiconductor) foundry process utilizing the top metal layer of the process for the trap electrodes. The process includes doped active regions and metal interconnect layers, allowing for co-fabrication of standard CMOS circuitry as well as devices for optical control and measurement. With one of the interconnect layers defining a ground plane between the trap electrode layer and the p-type doped silicon substrate, ion loading is robust and trapping is stable. We measure a motional heating rate comparable to those seen in surface-electrode traps of similar size. This demonstration of scalable quantum computing hardware utilizing a commercial CMOS process opens the door to integration and co-fabrication of electronics and photonics for large-scale quantum processing in trapped-ion arrays.

A 20 Mfps high frame-depth CMOS burst-mode imager with low power in-pixel NMOS-only passive amplifier

Science.gov (United States)

Wu, L.; San Segundo Bello, D.; Coppejans, P.; Craninckx, J.; Wambacq, P.; Borremans, J.

2017-02-01

This paper presents a 20 Mfps 32 × 84 pixels CMOS burst-mode imager featuring high frame depth with a passive in-pixel amplifier. Compared to the CCD alternatives, CMOS burst-mode imagers are attractive for their low power consumption and integration of circuitry such as ADCs. Due to storage capacitor size and its noise limitations, CMOS burst-mode imagers usually suffer from a lower frame depth than CCD implementations. In order to capture fast transitions over a longer time span, an in-pixel CDS technique has been adopted to reduce the required memory cells for each frame by half. Moreover, integrated with in-pixel CDS, an in-pixel NMOS-only passive amplifier alleviates the kTC noise requirements of the memory bank allowing the usage of smaller capacitors. Specifically, a dense 108-cell MOS memory bank (10fF/cell) has been implemented inside a 30μm pitch pixel, with an area of 25 × 30μm2 occupied by the memory bank. There is an improvement of about 4x in terms of frame depth per pixel area by applying in-pixel CDS and amplification. With the amplifier's gain of 3.3, an FD input-referred RMS noise of 1mV is achieved at 20 Mfps operation. While the amplification is done without burning DC current, including the pixel source follower biasing, the full pixel consumes 10μA at 3.3V supply voltage at full speed. The chip has been fabricated in imec's 130nm CMOS CIS technology.

CMOS front ends for millimeter wave wireless communication systems

CERN Document Server

Deferm, Noël

2015-01-01

This book focuses on the development of circuit and system design techniques for millimeter wave wireless communication systems above 90GHz and fabricated in nanometer scale CMOS technologies. The authors demonstrate a hands-on methodology that was applied to design six different chips, in order to overcome a variety of design challenges. Behavior of both actives and passives, and how to design them to achieve high performance is discussed in detail. This book serves as a valuable reference for millimeter wave designers, working at both the transistor level and system level.   Discusses advantages and disadvantages of designing wireless mm-wave communication circuits and systems in CMOS; Analyzes the limitations and pitfalls of building mm-wave circuits in CMOS; Includes mm-wave building block and system design techniques and applies these to 6 different CMOS chips; Provides guidelines for building measurement setups to evaluate high-frequency chips.  

Merits of CMOS/SIMOX technology for low-voltage SRAM macros

CERN Document Server

Kumagai, K; Yamada, T; Nakamura, H; Onishi, H; Matsubara, Y; Imai, K; Kurosawa, S

1999-01-01

A 128-kbit SRAM (static random access memory) macro with the 0.35 mu m FD (fully-depleted) CMOS/SIMOX (separation by implantation of oxygen) technology has been developed to demonstrate the merits of that technology for low-voltage $9 applications. Its access time at Vdd =1.5 V was comparable with that obtained with the 0.35 mu m standard bulk CMOS technology at Vdd=3.3 V, due to the combination of the small S/D capacitance and the small back-bias effect. As the $9 yield of the 128-kbit SRAM macros was almost the same as the standard bulk CMOS technology, the manufacturability of the 0.35 mu m FD-CMOS/SIMOX technology has also been demonstrated. (7 refs).

Hybrid Josephson-CMOS Memory in Advanced Technologies and Larger Sizes

International Nuclear Information System (INIS)

Liu, Q; Van Duzer, T; Fujiwara, K; Yoshikawa, N

2006-01-01

Recent progress on demonstrating components of the 64 kb Josephson-CMOS hybrid memory has encouraged exploration of the advancement possible with use of advanced technologies for both the Josephson and CMOS parts of the memory, as well as considerations of the effect of memory size on access time and power dissipation. The simulations to be reported depend on the use of an approximate model for 90 nm CMOS at 4 K. This model is an extension of the one we developed for 0.25 μm CMOS and have already verified. For the Josephson parts, we have chosen 20 kA/cm 2 technology, which was recently demonstrated. The calculations show that power dissipation and access time increase rather slowly with increasing size of the memory

CMOS Imaging Sensor Technology for Aerial Mapping Cameras

Science.gov (United States)

Neumann, Klaus; Welzenbach, Martin; Timm, Martin

2016-06-01

In June 2015 Leica Geosystems launched the first large format aerial mapping camera using CMOS sensor technology, the Leica DMC III. This paper describes the motivation to change from CCD sensor technology to CMOS for the development of this new aerial mapping camera. In 2002 the DMC first generation was developed by Z/I Imaging. It was the first large format digital frame sensor designed for mapping applications. In 2009 Z/I Imaging designed the DMC II which was the first digital aerial mapping camera using a single ultra large CCD sensor to avoid stitching of smaller CCDs. The DMC III is now the third generation of large format frame sensor developed by Z/I Imaging and Leica Geosystems for the DMC camera family. It is an evolution of the DMC II using the same system design with one large monolithic PAN sensor and four multi spectral camera heads for R,G, B and NIR. For the first time a 391 Megapixel large CMOS sensor had been used as PAN chromatic sensor, which is an industry record. Along with CMOS technology goes a range of technical benefits. The dynamic range of the CMOS sensor is approx. twice the range of a comparable CCD sensor and the signal to noise ratio is significantly better than with CCDs. Finally results from the first DMC III customer installations and test flights will be presented and compared with other CCD based aerial sensors.

Half-Life Measurements in {sup 134}l

Energy Technology Data Exchange (ETDEWEB)

Berg, V; Hoeglund, Aa

1970-07-01

Properties of levels in I following the decay of {sup 13T}e have been investigated using a Ge(Li) detector and a double lens coincidence spectrometer. 4 new transitions were found. Half-lives of the lowest excited levels were measured with the following results: T{sub 1/2} (79.5 keV) = 1.62 {+-} 10 ns; T{sub 1/2} (181.1 keV) < 100 ps; T{sub 1/2} (210.8 keV) < 150 ps.

Cryo-CMOS Circuits and Systems for Quantum Computing Applications

NARCIS (Netherlands)

Patra, B; Incandela, R.M.; van Dijk, J.P.G.; Homulle, H.A.R.; Song, Lin; Shahmohammadi, M.; Staszewski, R.B.; Vladimirescu, A.; Babaie, M.; Sebastiano, F.; Charbon, E.E.E.

2018-01-01

A fault-tolerant quantum computer with millions of quantum bits (qubits) requires massive yet very precise control electronics for the manipulation and readout of individual qubits. CMOS operating at cryogenic temperatures down to 4 K (cryo-CMOS) allows for closer system integration, thus promising

From VHF to UHF CMOS-MEMS Monolithically Integrated Resonators

DEFF Research Database (Denmark)

Teva, Jordi; Berini, Abadal Gabriel; Uranga, A.

2008-01-01

This paper presents the design, fabrication and characterization of microresonators exhibiting resonance frequencies in the VHF and UHF bands, fabricated using the available layers of the standard and commercial CMOS technology, AMS-0.35mum. The resonators are released in a post-CMOS process cons...

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

CMOS Image Sensors: Electronic Camera On A Chip

Science.gov (United States)

Fossum, E. R.

1995-01-01

Recent advancements in CMOS image sensor technology are reviewed, including both passive pixel sensors and active pixel sensors. On- chip analog to digital converters and on-chip timing and control circuits permit realization of an electronic camera-on-a-chip. Highly miniaturized imaging systems based on CMOS image sensor technology are emerging as a competitor to charge-coupled devices for low cost uses.

CMOS image sensor-based immunodetection by refractive-index change.

Science.gov (United States)

Devadhasan, Jasmine P; Kim, Sanghyo

2012-01-01

A complementary metal oxide semiconductor (CMOS) image sensor is an intriguing technology for the development of a novel biosensor. Indeed, the CMOS image sensor mechanism concerning the detection of the antigen-antibody (Ag-Ab) interaction at the nanoscale has been ambiguous so far. To understand the mechanism, more extensive research has been necessary to achieve point-of-care diagnostic devices. This research has demonstrated a CMOS image sensor-based analysis of cardiovascular disease markers, such as C-reactive protein (CRP) and troponin I, Ag-Ab interactions on indium nanoparticle (InNP) substrates by simple photon count variation. The developed sensor is feasible to detect proteins even at a fg/mL concentration under ordinary room light. Possible mechanisms, such as dielectric constant and refractive-index changes, have been studied and proposed. A dramatic change in the refractive index after protein adsorption on an InNP substrate was observed to be a predominant factor involved in CMOS image sensor-based immunoassay.

CMOS circuit design, layout and simulation

CERN Document Server

Baker, R Jacob

2010-01-01

The Third Edition of CMOS Circuit Design, Layout, and Simulation continues to cover the practical design of both analog and digital integrated circuits, offering a vital, contemporary view of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and much more. Regardless of one's integrated circuit (IC) design skill level, this book allows readers to experience both the theory behind, and the hands-on implementation of, complementary metal oxide semiconductor (CMOS) IC design via detailed derivations, discussions, and hundreds of design, layout, and simulation examples.

Contact CMOS imaging of gaseous oxygen sensor array.

Science.gov (United States)

Daivasagaya, Daisy S; Yao, Lei; Yi Yung, Ka; Hajj-Hassan, Mohamad; Cheung, Maurice C; Chodavarapu, Vamsy P; Bright, Frank V

2011-10-01

We describe a compact luminescent gaseous oxygen (O 2 ) sensor microsystem based on the direct integration of sensor elements with a polymeric optical filter and placed on a low power complementary metal-oxide semiconductor (CMOS) imager integrated circuit (IC). The sensor operates on the measurement of excited-state emission intensity of O 2 -sensitive luminophore molecules tris(4,7-diphenyl-1,10-phenanthroline) ruthenium(II) ([Ru(dpp) 3 ] 2+ ) encapsulated within sol-gel derived xerogel thin films. The polymeric optical filter is made with polydimethylsiloxane (PDMS) that is mixed with a dye (Sudan-II). The PDMS membrane surface is molded to incorporate arrays of trapezoidal microstructures that serve to focus the optical sensor signals on to the imager pixels. The molded PDMS membrane is then attached with the PDMS color filter. The xerogel sensor arrays are contact printed on top of the PDMS trapezoidal lens-like microstructures. The CMOS imager uses a 32 × 32 (1024 elements) array of active pixel sensors and each pixel includes a high-gain phototransistor to convert the detected optical signals into electrical currents. Correlated double sampling circuit, pixel address, digital control and signal integration circuits are also implemented on-chip. The CMOS imager data is read out as a serial coded signal. The CMOS imager consumes a static power of 320 µW and an average dynamic power of 625 µW when operating at 100 Hz sampling frequency and 1.8 V DC. This CMOS sensor system provides a useful platform for the development of miniaturized optical chemical gas sensors.

Single-chip RF communications systems in CMOS

DEFF Research Database (Denmark)

Olesen, Ole

1997-01-01

The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

CMOS sigma-delta converters practical design guide

CERN Document Server

De la Rosa, Jose M

2013-01-01

A comprehensive overview of Sigma-Delta Analog-to-Digital Converters (ADCs) and a practical guide to their design in nano-scale CMOS for optimal performance. This book presents a systematic and comprehensive compilation of sigma-delta converter operating principles, the new advances in architectures and circuits, design methodologies and practical considerations - going from system-level specifications to silicon integration, packaging and measurements, with emphasis on nanometer CMOS implementation. The book emphasizes practical design issues - from high-level behavioural modelling i

High-Voltage-Input Level Translator Using Standard CMOS

Science.gov (United States)

Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

2011-01-01

proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

Half-sandwich cobalt complexes in the metal-organic chemical vapor deposition process

Energy Technology Data Exchange (ETDEWEB)

Georgi, Colin [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Hapke, Marko; Thiel, Indre [Leibniz-Institut für Katalyse e.V. an der Universität Rostock (LIKAT), Albert-Einstein-Straße 29a, Rostock 18059 (Germany); Hildebrandt, Alexander [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany); Waechtler, Thomas; Schulz, Stefan E. [Fraunhofer Institute of Electronic Nano Systems (ENAS), Technologie-Campus 3, Chemnitz 09126 (Germany); Technische Universität Chemnitz, Center for Microtechnologies (ZfM), Chemnitz 09107 (Germany); Lang, Heinrich, E-mail: heinrich.lang@chemie.tu-chemnitz.de [Technische Universität Chemnitz, Faculty of Natural Science, Institute of Chemistry, Inorganic Chemistry, Chemnitz 09107 (Germany)

2015-03-02

A series of cobalt half-sandwich complexes of type [Co(η{sup 5}-C{sub 5}H{sub 5})(L)(L′)] (1: L, L′ = 1,5-hexadiene; 2: L = P(OEt){sub 3}, L′ = H{sub 2}C=CHSiMe{sub 3}; 3: L = L′ = P(OEt){sub 3}) has been studied regarding their physical properties such as the vapor pressure, decomposition temperature and applicability within the metal-organic chemical vapor deposition (MOCVD) process, with a focus of the influence of the phosphite ligands. It could be shown that an increasing number of P(OEt){sub 3} ligands increases the vapor pressure and thermal stability of the respective organometallic compound. Complex 3 appeared to be a promising MOCVD precursor with a high vapor pressure and hence was deposited onto Si/SiO{sub 2} (100 nm) substrates. The resulting reflective layer is closed, dense and homogeneous, with a slightly granulated surface morphology. X-ray photoelectron spectroscopy (XPS) studies demonstrated the formation of metallic cobalt, cobalt phosphate, cobalt oxide and cobalt carbide. - Highlights: • Thermal studies and vapor pressure measurements of cobalt half-sandwich complexes was carried out. • Chemical vapor deposition with cobalt half-sandwich complexes is reported. • The use of Co-phosphites results in significant phosphorous-doped metallic layers.

Advancement of CMOS Doping Technology in an External Development Framework

Science.gov (United States)

Jain, Amitabh; Chambers, James J.; Shaw, Judy B.

2011-01-01

The consumer appetite for a rich multimedia experience drives technology development for mobile hand-held devices and the infrastructure to support them. Enhancements in functionality, speed, and user experience are derived from advancements in CMOS technology. The technical challenges in developing each successive CMOS technology node to support these enhancements have become increasingly difficult. These trends have motivated the CMOS business towards a collaborative approach based on strategic partnerships. This paper describes our model and experience of CMOS development, based on multi-dimensional industrial and academic partnerships. We provide to our process equipment, materials, and simulation partners, as well as to our silicon foundry partners, the detailed requirements for future integrated circuit products. This is done very early in the development cycle to ensure that these requirements can be met. In order to determine these fundamental requirements, we rely on a strategy that requires strong interaction between process and device simulation, physical and chemical analytical methods, and research at academic institutions. This learning is shared with each project partner to address integration and manufacturing issues encountered during CMOS technology development from its inception through product ramp. We utilize TI's core strengths in physical analysis, unit processes and integration, yield ramp, reliability, and product engineering to support this technological development. Finally, this paper presents examples of the advancement of CMOS doping technology for the 28 nm node and beyond through this development model.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Science.gov (United States)

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Transient-induced latchup in CMOS integrated circuits

CERN Document Server

Ker, Ming-Dou

2009-01-01

"Transient-Induced Latchup in CMOS Integrated Circuits equips the practicing engineer with all the tools needed to address this regularly occurring problem while becoming more proficient at IC layout. Ker and Hsu introduce the phenomenon and basic physical mechanism of latchup, explaining the critical issues that have resurfaced for CMOS technologies. Once readers can gain an understanding of the standard practices for TLU, Ker and Hsu discuss the physical mechanism of TLU under a system-level ESD test, while introducing an efficient component-level TLU measurement setup. The authors then present experimental methodologies to extract safe and area-efficient compact layout rules for latchup prevention, including layout rules for I/O cells, internal circuits, and between I/O and internal circuits. The book concludes with an appendix giving a practical example of extracting layout rules and guidelines for latchup prevention in a 0.18-micrometer 1.8V/3.3V silicided CMOS process."--Publisher's description.

Intense beams at the micron level for the Next Linear Collider

International Nuclear Information System (INIS)

Seeman, J.T.

1991-08-01

High brightness beams with sub-micron dimensions are needed to produce a high luminosity for electron-positron collisions in the Next Linear Collider (NLC). To generate these small beam sizes, a large number of issues dealing with intense beams have to be resolved. Over the past few years many have been successfully addressed but most need experimental verification. Some of these issues are beam dynamics, emittance control, instrumentation, collimation, and beam-beam interactions. Recently, the Stanford Linear Collider (SLC) has proven the viability of linear collider technology and is an excellent test facility for future linear collider studies

Size effect of primary Y{sub 2}O{sub 3} additions on the characteristics of the nanostructured ferritic ODS alloys: Comparing as-milled and as-milled/annealed alloys using S/TEM

Energy Technology Data Exchange (ETDEWEB)

Saber, Mostafa, E-mail: msaber@ncsu.edu; Xu, Weizong; Li, Lulu; Zhu, Yuntian; Koch, Carl C.; Scattergood, Ronald O.

2014-09-15

The need for providing S/TEM evidence to clarify the mechanisms of nano-scale precipitate formation was the motivation of this investigation. In this study, an Fe–14Cr–0.4Ti alloy was ball-milled with different amounts of Y{sub 2}O{sub 3} content up to 10 wt.%, and then annealed at temperatures up to 1100 °C. Micron-size Y{sub 2}O{sub 3} particles were substituted for the nano-size counterpart to elucidate the mechanism of oxide precipitate formation. The S/TEM studies revealed that the microstructure of the alloy with 10 wt.% yttria contained amorphous undissolved Y{sub 2}O{sub 3} after ball milling, while a small part of the initial oxide particles were dissolved into the solid solution. Consequently, when the amount of yttria was reduced to 1 wt.%, the amorphous phase of the yttria vanished and the whole content of Y{sub 2}O{sub 3} was dissolved into the BCC solid solution. Defect analysis of precipitates on the annealed samples via S/TEM and micro-hardness studies revealed that the use of micron-size primary oxide particles can produce nano-size precipitates, stable up to temperatures as high as 1100 °C, and uniformly distributed throughout the microstructure. This study indicates that the use of high energy ball milling along with micron-size primary oxide particles can lead to nanostructured ferritic ODS alloys without the use of nano-size primary oxide additions.

A 128 x 128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems

Science.gov (United States)

Mendis, Sunetra K.; Kemeny, Sabrina E.; Fossum, Eric R.

1993-01-01

A new CMOS-based image sensor that is intrinsically compatible with on-chip CMOS circuitry is reported. The new CMOS active pixel image sensor achieves low noise, high sensitivity, X-Y addressability, and has simple timing requirements. The image sensor was fabricated using a 2 micrometer p-well CMOS process, and consists of a 128 x 128 array of 40 micrometer x 40 micrometer pixels. The CMOS image sensor technology enables highly integrated smart image sensors, and makes the design, incorporation and fabrication of such sensors widely accessible to the integrated circuit community.

Development of a CMOS process using high energy ion implantation

International Nuclear Information System (INIS)

Stolmeijer, A.

1986-01-01

The main interest of this thesis is the use of complementary metal oxide semiconductors (CMOS) in electronic technology. Problems in developing a CMOS process are mostly related to the isolation well of p-n junctions. It is shown that by using high energy ion implantation, it is possible to reduce lateral dimensions to obtain a rather high packing density. High energy ion implantation is also presented as a means of simplifying CMOS processing, since extended processing steps at elevated temperatures are superfluous. Process development is also simplified. (Auth.)

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

Energy Technology Data Exchange (ETDEWEB)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.; Takenaka, M.; Takagi, S. [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan and JST-CREST, K' s Gobancho 6F, 7 Gobancho, Chiyoda-ku, Tokyo 102-0076 (Japan)

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locate in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.

CMOS Compatibility of a Micromachining Process Developed for Semiconductor Neural Probe

National Research Council Canada - National Science Library

An, S

2001-01-01

.... Test transistor patterns generated using standard CMOS fabrication line were exposed to a post-CMOS probe making process including dielectric deposition, gold metalization and the dry etching step...

Coal reburning for cost-effective NO{sub x} compliance

Energy Technology Data Exchange (ETDEWEB)

Folsom, B.A.; Sommer, T.M.; Engelhardt, D.A.; Moyeda, D.K.; Rock, R.G.; O`Dea, D.T.; Hunsicker, S.; Watts, J.U.

1997-12-31

This paper presents the application of micronized coal reburning to a cyclone-fired boiler in order to meet RACT emissions requirements in New York State. Discussed in the paper are reburning technology, the use of a coal micronizer, and the application of the technology to an Eastman Kodak unit. The program is designed to demonstrate the economical reduction of NO{sub x} emissions without adverse impact to the boiler.

A CMOS transconductance-C filter technique for very high frequencies

NARCIS (Netherlands)

Nauta, Bram

1992-01-01

CMOS circuits for integrated analog filters at very high frequencies, based on transconductance-C integrators, are presented. First a differential transconductance element based on CMOS inverters is described. With this circuit a linear, tunable integrator for very-high-frequency integrated filters

Half-life Measurements of Levels in {sup 75}As

Energy Technology Data Exchange (ETDEWEB)

Hoejeberg, M; Malmskog, S G

1969-04-15

Half-lives for three levels in {sup 75}As have been determined using an electron-electron coincidence spectrometer. The following results have been obtained. T{sub 1/2} (199 keV) = 0.87 {+-} 0.03 nsec, T{sub 1/2} (280 keV) = 0.28 {+-} 0.02 nsec and T{sub 1/2} (401 keV) = 1. 67 {+-} 0.14 nsec.

Nano-electromechanical switch-CMOS hybrid technology and its applications.

Science.gov (United States)

Lee, B H; Hwang, H J; Cho, C H; Lim, S K; Lee, S Y; Hwang, H

2011-01-01

Si-based CMOS technology is facing a serious challenge in terms of power consumption and variability. The increasing costs associated with physical scaling have motivated a search for alternative approaches. Hybridization of nano-electromechanical (NEM)-switch and Si-based CMOS devices has shown a theoretical feasibility for power management, but a huge technical gap must be bridged before a nanoscale NEM switch can be realized due to insufficient material development and the limited understanding of its reliability characteristics. These authors propose the use of a multilayer graphene as a nanoscale cantilever material for a nanoscale NEM switchwith dimensions comparable to those of the state-of-the-art Si-based CMOS devices. The optimal thickness for the multilayer graphene (about five layers) is suggested based on an analytical model. Multilayer graphene can provide the highest Young's modulus among the known electrode materials and a yielding strength that allows more than 15% bending. Further research on material screening and device integration is needed, however, to realize the promises of the hybridization of NEM-switch and Si-based CMOS devices.

CMOS VLSI Active-Pixel Sensor for Tracking

Science.gov (United States)

Pain, Bedabrata; Sun, Chao; Yang, Guang; Heynssens, Julie

2004-01-01

An architecture for a proposed active-pixel sensor (APS) and a design to implement the architecture in a complementary metal oxide semiconductor (CMOS) very-large-scale integrated (VLSI) circuit provide for some advanced features that are expected to be especially desirable for tracking pointlike features of stars. The architecture would also make this APS suitable for robotic- vision and general pointing and tracking applications. CMOS imagers in general are well suited for pointing and tracking because they can be configured for random access to selected pixels and to provide readout from windows of interest within their fields of view. However, until now, the architectures of CMOS imagers have not supported multiwindow operation or low-noise data collection. Moreover, smearing and motion artifacts in collected images have made prior CMOS imagers unsuitable for tracking applications. The proposed CMOS imager (see figure) would include an array of 1,024 by 1,024 pixels containing high-performance photodiode-based APS circuitry. The pixel pitch would be 9 m. The operations of the pixel circuits would be sequenced and otherwise controlled by an on-chip timing and control block, which would enable the collection of image data, during a single frame period, from either the full frame (that is, all 1,024 1,024 pixels) or from within as many as 8 different arbitrarily placed windows as large as 8 by 8 pixels each. A typical prior CMOS APS operates in a row-at-a-time ( grolling-shutter h) readout mode, which gives rise to exposure skew. In contrast, the proposed APS would operate in a sample-first/readlater mode, suppressing rolling-shutter effects. In this mode, the analog readout signals from the pixels corresponding to the windows of the interest (which windows, in the star-tracking application, would presumably contain guide stars) would be sampled rapidly by routing them through a programmable diagonal switch array to an on-chip parallel analog memory array. The

Development of radiation hard CMOS active pixel sensors for HL-LHC

International Nuclear Information System (INIS)

Pernegger, Heinz

2016-01-01

New pixel detectors, based on commercial high voltage and/or high resistivity full CMOS processes, hold promise as next-generation active pixel sensors for inner and intermediate layers of the upgraded ATLAS tracker. The use of commercial CMOS processes allow cost-effective detector construction and simpler hybridisation techniques. The paper gives an overview of the results obtained on AMS-produced CMOS sensors coupled to the ATLAS Pixel FE-I4 readout chips. The SOI (silicon-on-insulator) produced sensors by XFAB hold great promise as radiation hard SOI-CMOS sensors due to their combination of partially depleted SOI transistors reducing back-gate effects. The test results include pre-/post-irradiation comparison, measurements of charge collection regions as well as test beam results.

Elevated voltage level I.sub.DDQ failure testing of integrated circuits

Science.gov (United States)

Righter, Alan W.

1996-01-01

Burn in testing of static CMOS IC's is eliminated by I.sub.DDQ testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip.

Pre-Clinical Tests of an Integrated CMOS Biomolecular Sensor for Cardiac Diseases Diagnosis.

Science.gov (United States)

Lee, Jen-Kuang; Wang, I-Shun; Huang, Chi-Hsien; Chen, Yih-Fan; Huang, Nien-Tsu; Lin, Chih-Ting

2017-11-26

Coronary artery disease and its related complications pose great threats to human health. In this work, we aim to clinically evaluate a CMOS field-effect biomolecular sensor for cardiac biomarkers, cardiac-specific troponin-I (cTnI), N -terminal prohormone brain natriuretic peptide (NT-proBNP), and interleukin-6 (IL-6). The CMOS biosensor is implemented via a standard commercialized 0.35 μm CMOS process. To validate the sensing characteristics, in buffer conditions, the developed CMOS biosensor has identified the detection limits of IL-6, cTnI, and NT-proBNP as being 45 pM, 32 pM, and 32 pM, respectively. In clinical serum conditions, furthermore, the developed CMOS biosensor performs a good correlation with an enzyme-linked immuno-sorbent assay (ELISA) obtained from a hospital central laboratory. Based on this work, the CMOS field-effect biosensor poses good potential for accomplishing the needs of a point-of-care testing (POCT) system for heart disease diagnosis.

A novel multi-actuation CMOS RF MEMS switch

Science.gov (United States)

Lee, Chiung-I.; Ko, Chih-Hsiang; Huang, Tsun-Che

2008-12-01

This paper demonstrates a capacitive shunt type RF MEMS switch, which is actuated by electro-thermal actuator and electrostatic actuator at the same time, and than latching the switching status by electrostatic force only. Since thermal actuators need relative low voltage compare to electrostatic actuators, and electrostatic force needs almost no power to maintain the switching status, the benefits of the mechanism are very low actuation voltage and low power consumption. Moreover, the RF MEMS switch has considered issues for integrated circuit compatible in design phase. So the switch is fabricated by a standard 0.35um 2P4M CMOS process and uses wet etching and dry etching technologies for postprocess. This compatible ability is important because the RF characteristics are not only related to the device itself. If a packaged RF switch and a packaged IC wired together, the parasitic capacitance will cause the problem for optimization. The structure of the switch consists of a set of CPW transmission lines and a suspended membrane. The CPW lines and the membrane are in metal layers of CMOS process. Besides, the electro-thermal actuators are designed by polysilicon layer of the CMOS process. So the RF switch is only CMOS process layers needed for both electro-thermal and electrostatic actuations in switch. The thermal actuator is composed of a three-dimensional membrane and two heaters. The membrane is a stacked step structure including two metal layers in CMOS process, and heat is generated by poly silicon resistors near the anchors of membrane. Measured results show that the actuation voltage of the switch is under 7V for electro-thermal added electrostatic actuation.

Electronic, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) by first-principles

Energy Technology Data Exchange (ETDEWEB)

Munir, Junaid; Mat Isa, Ahmad Radzi [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia); Yousaf, Masood [IBS Center for Multidimensional Carbon Materials, Ulsan National Institute of Science and Technology, Ulsan 689-798 (Korea, Republic of); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University (Iran, Islamic Republic of); Ain, Qurat-ul [Key Laboratory for Laser Plasamas (MOE) & Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China); Saeed, M.A., E-mail: saeed@utm.my [Physics Department, Faculty of Science, Universiti Teknologi Malaysia, Skudai 81310, Johor (Malaysia)

2016-10-15

This article reports the electronic, structure, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) studied by employing density functional theory with local density approximation (LDA), generalized gradient approximation (GGA) of Perdew–Burke–Ernzerhof-96 (PBE) and modified Becke–Johnson (mBJ) exchange-correlation potential and energy. The band structure and density of states of these compounds are also presented. The total density of states (DOS) for up and down spin states clearly split, which means that the exchange interaction causes the ordered spin arrangement. PBE-mBJ calculation reveals a wider band gap in spin down state, which shows a half-metallic electronic character at the equilibrium state. The spin-polarized calculations indicate metallic nature in orthorhombic crystalline phase. It is also noted that the optical conductivity for PBE-mBJ is larger than that of LDA and PBE-GGA. Furthermore, the results show a half-metallic ferromagnetic ground state for Ni(pyz)V{sub 4}O{sub 10} in PBE-mBJ potential. The present results suggest Ni(pyz)V{sub 4}O{sub 10} compound as a potential candidate for the future optoelectronic and spintronic applications. - Highlights: • First study of the electronic, structure, magnetic and optical properties of reduced hybrid layered complex Ni(pyz)V{sub 4}O{sub 10} (pyz=C{sub 4}H{sub 4}N{sub 2}) by first principles. • PBE-mBJ calculation reveals a wider band gap in spin down state indicating its half-metallic electronic character. • The large spin magnetic moment on Ni and V cations indicates the ferromagnetic interaction which makes this compound suitable candidate for spintronics applications. • An optical band gap reveals that this compound is also useful for the application in optoelectronics.

Integrated 60GHz RF beamforming in CMOS

CERN Document Server

Yu, Yikun; van Roermund, Arthur H M

2011-01-01

""Integrated 60GHz RF Beamforming in CMOS"" describes new concepts and design techniques that can be used for 60GHz phased array systems. First, general trends and challenges in low-cost high data-rate 60GHz wireless system are studied, and the phased array technique is introduced to improve the system performance. Second, the system requirements of phase shifters are analyzed, and different phased array architectures are compared. Third, the design and implementation of 60GHz passive and active phase shifters in a CMOS technology are presented. Fourth, the integration of 60GHz phase shifters

Challenges & Roadmap for Beyond CMOS Computing Simulation.

Energy Technology Data Exchange (ETDEWEB)

Rodrigues, Arun F. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Frank, Michael P. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2017-12-01

Simulating HPC systems is a difficult task and the emergence of “Beyond CMOS” architectures and execution models will increase that difficulty. This document presents a “tutorial” on some of the simulation challenges faced by conventional and non-conventional architectures (Section 1) and goals and requirements for simulating Beyond CMOS systems (Section 2). These provide background for proposed short- and long-term roadmaps for simulation efforts at Sandia (Sections 3 and 4). Additionally, a brief explanation of a proof-of-concept integration of a Beyond CMOS architectural simulator is presented (Section 2.3).

VLSI scaling methods and low power CMOS buffer circuit

International Nuclear Information System (INIS)

Sharma Vijay Kumar; Pattanaik Manisha

2013-01-01

Device scaling is an important part of the very large scale integration (VLSI) design to boost up the success path of VLSI industry, which results in denser and faster integration of the devices. As technology node moves towards the very deep submicron region, leakage current and circuit reliability become the key issues. Both are increasing with the new technology generation and affecting the performance of the overall logic circuit. The VLSI designers must keep the balance in power dissipation and the circuit's performance with scaling of the devices. In this paper, different scaling methods are studied first. These scaling methods are used to identify the effects of those scaling methods on the power dissipation and propagation delay of the CMOS buffer circuit. For mitigating the power dissipation in scaled devices, we have proposed a reliable leakage reduction low power transmission gate (LPTG) approach and tested it on complementary metal oxide semiconductor (CMOS) buffer circuit. All simulation results are taken on HSPICE tool with Berkeley predictive technology model (BPTM) BSIM4 bulk CMOS files. The LPTG CMOS buffer reduces 95.16% power dissipation with 84.20% improvement in figure of merit at 32 nm technology node. Various process, voltage and temperature variations are analyzed for proving the robustness of the proposed approach. Leakage current uncertainty decreases from 0.91 to 0.43 in the CMOS buffer circuit that causes large circuit reliability. (semiconductor integrated circuits)

Characterization of active CMOS pixel sensors on high resistive substrate

Energy Technology Data Exchange (ETDEWEB)

Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

2016-07-01

Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

Dissolution enhancement of Tibolone by micronization technique

Directory of Open Access Journals (Sweden)

Kailash Bansal

2012-01-01

Conclusion: Micronization technique has a significant impact on the dissolution of Tibolone. The experimental findings suggest that micronization can be used for the preparation of rapidly dissolving formulations of Tibolone, and could potentially lead to improvement in the in-vivo bioavailability of Tibolone oral tablets.

One Micron Laser Technology Advancements at GSFC

Science.gov (United States)

Heaps, William S.

2010-01-01

This slide presentation reviews the advancements made in one micron laser technology at Goddard Space Flight Center. It includes information about risk factors that are being addressed by GSFC, and overviews of the various programs that GSFC is currently managing that are using 1 micron laser technology.

Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique

Energy Technology Data Exchange (ETDEWEB)

Borade, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Joshi, K.U. [Anton-Paar India Pvt. Ltd., Thane (W), 400607 (India); Gokarna, A.; Lerondel, G. [Laboratoire de Nanotechnologie et D' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 Rue Marie Curie, BP 2060, 10010 Troyes (France); Walke, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Late, D. [National Chemical Laboratory (NCL), Pune 400027 (India); Jejurikar, S.M., E-mail: jejusuhas@gmail.com [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India)

2016-02-01

We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. - Highlights: • Controlled growth of Dumbbell shaped ZnO using Chemical Bath Deposition (CBD). • Growth mechanism of dumbbell shaped ZnO by self-assembling was discussed. • Quick Transformation of ZnO dumbbell structures in to tubular structures by dissolution. • Sharp UV Emission at 370 nm from both dumbbell and tubular structures.

Distribution of impurity states and charge transport in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} nanocomposites

Energy Technology Data Exchange (ETDEWEB)

Liu, Yuanfeng; Makongo, Julien P.A. [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Page, Alexander [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Sahoo, Pranati [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States); Uher, Ctirad [Department of Physics, University of Michigan, Ann Arbor, MI 48109 (United States); Stokes, Kevin [The Advanced Materials Research Institute, Department of Physics, University of New Orleans, New Orleans, LA 70148 (United States); Poudeu, Pierre F.P., E-mail: ppoudeup@umich.edu [Laboratory for Emerging Energy and Electronic Materials, Department of Materials Science and Engineering, University of Michigan, Ann Arbor, MI 48109 (United States)

2016-02-15

Energy filtering of charge carriers in a semiconducting matrix using atomically coherent nanostructures can lead to a significant improvement of the thermoelectric figure of merit of the resulting composite. In this work, several half-Heusler/full-Heusler (HH/FH) nanocomposites with general compositions Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (0≤x≤0.15 and y=0.005, 0.01 and 0.025) were synthesized in order to investigate the behavior of extrinsic carriers at the HH/FH interfaces. Electronic transport data showed that energy filtering of carriers at the HH/FH interfaces in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} samples strongly depends on the doping level (y value) as well as the energy levels occupied by impurity states in the samples. For example, it was found that carrier filtering at HH/FH interfaces is negligible in Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 1−y}Sb{sub y} (y=0.01 and 0.025) composites where donor states originating from Sb dopant dominate electronic conduction. However, we observed a drastic decrease in the effective carrier density upon introduction of HH/FH interfaces for the mechanically alloyed Zr{sub 0.25}Hf{sub 0.75}Ni{sub 1+x}Sn{sub 0.995}Sb{sub 0.005} samples where donor states from unintentional Fe impurities contribute the largest fraction of conduction electrons. This work demonstrates the ability to synergistically integrate the concepts of doping and energy filtering through nanostructuring for the optimization of electronic transport in semiconductors. - Graphical abstract: Electronic transport in semiconducting half-Heusler (HH) matrices containing full-Heusler (FH) nanoinclusions strongly depends on the energy distribution of impurity states within the HH matrix with respect to the magnitude of the potential energy barrier at the HH/FH interfaces. - Highlights: • Coherent nanostructures enhanced thermoelectric behavior of half-Heusler alloys. • Nanostructures act as energy filter of

Design of CMOS RFIC ultra-wideband impulse transmitters and receivers

CERN Document Server

Nguyen, Cam

2017-01-01

This book presents the design of ultra-wideband (UWB) impulse-based transmitter and receiver frontends, operating within the 3.1-10.6 GHz frequency band, using CMOS radio-frequency integrated-circuits (RFICs). CMOS RFICs are small, cheap, low power devices, better suited for direct integration with digital ICs as compared to those using III-V compound semiconductor devices. CMOS RFICs are thus very attractive for RF systems and, in fact, the principal choice for commercial wireless markets.  The book comprises seven chapters. The first chapter gives an introduction to UWB technology and outlines its suitability for high resolution sensing and high-rate, short-range ad-hoc networking and communications. The second chapter provides the basics of CMOS RFICs needed for the design of the UWB RFIC transmitter and receiver presented in this book. It includes the design fundamentals, lumped and distributed elements for RFIC, layout, post-layout simulation, and measurement. The third chapter discusses the basics of U...

CMOS pixel development for the ATLAS experiment at HL-LHC

CERN Document Server

Risti{c}, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Monolithic active pixel sensors (MAPS) in a VLSI CMOS technology

CERN Document Server

Turchetta, R; Manolopoulos, S; Tyndel, M; Allport, P P; Bates, R; O'Shea, V; Hall, G; Raymond, M

2003-01-01

Monolithic Active Pixel Sensors (MAPS) designed in a standard VLSI CMOS technology have recently been proposed as a compact pixel detector for the detection of high-energy charged particle in vertex/tracking applications. MAPS, also named CMOS sensors, are already extensively used in visible light applications. With respect to other competing imaging technologies, CMOS sensors have several potential advantages in terms of low cost, low power, lower noise at higher speed, random access of pixels which allows windowing of region of interest, ability to integrate several functions on the same chip. This brings altogether to the concept of 'camera-on-a-chip'. In this paper, we review the use of CMOS sensors for particle physics and we analyse their performances in term of the efficiency (fill factor), signal generation, noise, readout speed and sensor area. In most of high-energy physics applications, data reduction is needed in the sensor at an early stage of the data processing before transfer of the data to ta...

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Gaudiello, Andrea; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on: HV enabling technologies that allow to use high depletion voltages (HV-MAPS), high resistivity wafers for large depletion depths (HR-MAPS); radiation hard processed with multiple nested wells to allow CMOS electronics embedded with sufficient shielding into the sensor substrate and backside processing and thinning for material minimization and backside voltage application. Since 2014, members of more than 20 groups in the ATLAS experiment are actively pursuing CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterizations. The goal of this program is to demonstrate that depleted CMOS pixels, with monolithic or hybrid designs, are suited for high rate, fast timing and high radiation operation at LHC. For this a number of technologies have been explored and characterized. In this pr...

Elevated voltage level I{sub DDQ} failure testing of integrated circuits

Science.gov (United States)

Righter, A.W.

1996-05-21

Burn in testing of static CMOS IC`s is eliminated by I{sub DDQ} testing at elevated voltage levels. These voltage levels are at least 25% higher than the normal operating voltage for the IC but are below voltage levels that would cause damage to the chip. 4 figs.

VHF NEMS-CMOS piezoresistive resonators for advanced sensing applications

Science.gov (United States)

Arcamone, Julien; Dupré, Cécilia; Arndt, Grégory; Colinet, Eric; Hentz, Sébastien; Ollier, Eric; Duraffourg, Laurent

2014-10-01

This work reports on top-down nanoelectromechanical resonators, which are among the smallest resonators listed in the literature. To overcome the fact that their electromechanical transduction is intrinsically very challenging due to their very high frequency (100 MHz) and ultimate size (each resonator is a 1.2 μm long, 100 nm wide, 20 nm thick silicon beam with 100 nm long and 30 nm wide piezoresistive lateral nanowire gauges), they have been monolithically integrated with an advanced fully depleted SOI CMOS technology. By advantageously combining the unique benefits of nanomechanics and nanoelectronics, this hybrid NEMS-CMOS device paves the way for novel breakthrough applications, such as NEMS-based mass spectrometry or hybrid NEMS/CMOS logic, which cannot be fully implemented without this association.

Single Photon Counting Performance and Noise Analysis of CMOS SPAD-Based Image Sensors

Science.gov (United States)

Dutton, Neale A. W.; Gyongy, Istvan; Parmesan, Luca; Henderson, Robert K.

2016-01-01

SPAD-based solid state CMOS image sensors utilising analogue integrators have attained deep sub-electron read noise (DSERN) permitting single photon counting (SPC) imaging. A new method is proposed to determine the read noise in DSERN image sensors by evaluating the peak separation and width (PSW) of single photon peaks in a photon counting histogram (PCH). The technique is used to identify and analyse cumulative noise in analogue integrating SPC SPAD-based pixels. The DSERN of our SPAD image sensor is exploited to confirm recent multi-photon threshold quanta image sensor (QIS) theory. Finally, various single and multiple photon spatio-temporal oversampling techniques are reviewed. PMID:27447643

Recent developments with CMOS SSPM photodetectors

Energy Technology Data Exchange (ETDEWEB)

Stapels, Christopher J. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)], E-mail: CStapels@RMDInc.com; Barton, Paul [University of Michigan, Ann Arbor, MI (United States); Johnson, Erik B. [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Wehe, David K. [University of Michigan, Ann Arbor, MI (United States); Dokhale, Purushottam; Shah, Kanai [Radiation Monitoring Devices, Inc., Watertown, MA (United States); Augustine, Frank L. [Augustine Engineering, Encinitas, CA (United States); Christian, James F. [Radiation Monitoring Devices, Inc., Watertown, MA (United States)

2009-10-21

Experiments and simulations using various solid-state photomultiplier (SSPM) designs have been performed to evaluate pixel layouts and explore design choices. SPICE simulations of a design for position-sensing SSPMs showed charge division in the resistor network, and anticipated timing performance of the device. The simulation results predict good position information for resistances in the range of 1-5 k{omega} and 150-{omega} preamplifier input impedance. Back-thinning of CMOS devices can possibly increase the fill factor to 100%, improve spectral sensitivity, and allow for the deposition of anti-reflective coatings after fabrication. We report initial results from back illuminating a CMOS SSPM, and single Geiger-mode avalanche photodiode (GPD) pixels, thinned to 50 {mu}m.

Electromagnetic Investigation of a CMOS MEMS Inductive Microphone

Directory of Open Access Journals (Sweden)

Farès TOUNSI

2009-09-01

Full Text Available This paper presents a detailed electromagnetic modeling for a new structure of a monolithic CMOS micromachined inductive microphone. We have shown, that the use of an alternative current (AC in the primary fixed inductor results in a substantially higher induced voltage in the secondary inductor comparing to the case when a direct current (DC is used. The expected increase of the induced voltage can be expressed by a voltage ratio of AC and DC solutions that is in the range of 3 to 6. A prototype fabrication of this microphone has been realized using a combination of standard CMOS 0.6 µm process with a CMOS-compatible post-process consisting in a bulk micromachining technology. The output voltage of the electrodynamic microphone that achieves the µV range can be increased by the use of the symmetric dual-layer spiral inductor structure.

Imaging of vaporised sub-micron phase change contrast agents with high frame rate ultrasound and optics

Science.gov (United States)

Lin, Shengtao; Zhang, Ge; Jamburidze, Akaki; Chee, Melisse; Hau Leow, Chee; Garbin, Valeria; Tang, Meng-Xing

2018-03-01

Phase-change ultrasound contrast agent (PCCA), or nanodroplet, shows promise as an alternative to the conventional microbubble agent over a wide range of diagnostic applications. Meanwhile, high-frame-rate (HFR) ultrasound imaging with microbubbles enables unprecedented temporal resolution compared to traditional contrast-enhanced ultrasound imaging. The combination of HFR ultrasound imaging and PCCAs can offer the opportunity to observe and better understand PCCA behaviour after vaporisation captures the fast phenomenon at a high temporal resolution. In this study, we utilised HFR ultrasound at frame rates in the kilohertz range (5-20 kHz) to image native and size-selected PCCA populations immediately after vaporisation in vitro within clinical acoustic parameters. The size-selected PCCAs through filtration are shown to preserve a sub-micron-sized (mean diameter  1 µm) that originate from native PCCA emulsion. The results demonstrate imaging signals with different amplitudes and temporal features compared to that of microbubbles. Compared with the microbubbles, both the B-mode and pulse-inversion (PI) signals from the vaporised PCCA populations were reduced significantly in the first tens of milliseconds, while only the B-mode signals from the PCCAs were recovered during the next 400 ms, suggesting significant changes to the size distribution of the PCCAs after vaporisation. It is also shown that such recovery in signal over time is not evident when using size-selective PCCAs. Furthermore, it was found that signals from the vaporised PCCA populations are affected by the amplitude and frame rate of the HFR ultrasound imaging. Using high-speed optical camera observation (30 kHz), we observed a change in particle size in the vaporised PCCA populations exposed to the HFR ultrasound imaging pulses. These findings can further the understanding of PCCA behaviour under HFR ultrasound imaging.

The selectivity of catalysts composed of V/sub 2/O/sub 5/ supported on ZrO/sub 2/-Y/sub 2/O/sub 3/ mixed oxides for methanol oxidation

International Nuclear Information System (INIS)

VanOmmen, J.G.; Gellings, P.J.; Ross, J.R.H.

1988-01-01

V/sub 2/O/sub 5/ monolayer catalysts were prepared on ZrO/sub 2/ and ZrO/sub 2/ doped with Y/sub 2/O/sub 3/ by two methods. The coverages obtained are only half a monolayer and did not depend on the preparation method or type of support. The selectivity for oxidation of methanol over these V/sub 2/O/sub 5/ catalysts changes from a predominance of formaldehyde to a predominance of methyl formate when the support is doped with Y/sub 2/C/sub 3/, independent of the amount of Y/sub 2/O/sub 3/

In situ XAS study of Li{sub x}Ni{sub 0.7}Fe{sub 0.15}Co{sub 0.15}O{sub 2} cathode material

Energy Technology Data Exchange (ETDEWEB)

Mansour, A.N. [Naval Surface Warfare Center, West Bethesda, MD (United States); Croguennec, L.; Prado, G.; Delmas, C. [Inst. de Chimie de la Matiere Condensee de Bordeaus-CNRS and Ecole Nationale Superieure de Chimie et Physique de Bordeaux, Pesssac Cedex (France)

2001-03-01

We have examined the oxidation states and local atomic structures of Ni, Fe, and Co in Li{sub x}Ni{sub 0.7}Fe{sub 0.15}Co{sub 0.15}O{sub 2} as a function of Li content during the first charge in a Li//Li{sub x}Ni{sub 0.7}Fe{sub 0.15}Co{sub 0.}1{sub 5O2} nonaqueous cell. We show that the composition of the material in the pristine state is more accurately described by Li{sub 0.95}Ni(II){sub 0.09}Ni(III){sub 0.66}Fe(III){sub 0.15}Co(III){sub 0.15}O{sub 2}. Half Ni(II) resides in Li-vacant sites. Both Fe and Co substitute for Ni within the NiO{sub 2} slabs with no significant amounts of Fe or Co that can be attributed to Li-vacant sites. The local structure parameters are consistent with oxidation states observed on the basis of the XANES data. The Ni {kappa}-edge energy continuously shifts to a higher energy with decrease in Li content due to oxidation of Ni( II) to Ni( III) and Ni( III) to Ni( IV). After the complete oxidation of Ni( III) to Ni( IV), the Fe KAPPA(-edge energy begins to increase with further decrease in Li content indicating the oxidation of Fe( III) to Fe( IV). The Co )KAPPA-edge energy at half-height, on the other hand, is unchanged during the whole range of Li de-intercalation indicating that no significant change in the oxidation state of Co occurs upon the complete removal of Li. (au)

The Cheshire-cat-like Behavior of 2nu(sub 3) Overtone of Co2 near 2.134 micron: NIR Lab Spectra of Solid CO2 in H2O and CH3OH

Science.gov (United States)

Bernstein, Max; Sandford, Scott; Cruikshank, Dale

2005-01-01

Infrared (IR) spectra have demonstrated that solid H2O is very common in the outer Solar System, and solid carbon dioxide (CO2) has been detected on icy satellites, comets, and planetismals throughout the outer Solar System. In such environments, CO2 and H2O must sometimes be mixed at a molecular level, changing their IR absorption features. In fact, the IR spectra of CO2-H2O mixtures are not equivalent to a linear combination of the spectra of the pure materials. Laboratory IR spectra of pure CO2 and H2O have been published but a lack of near-IR spectra of CO2-H2O mixtures has made the interpretation of outer Solar System spectra more difficult. We present near infrared (IR) spectra of CO2 in H2O and in CH3OH compared to that of pure solid CO2 and find significant differences. Peaks not present in either pure H2O or pure CO2 spectra become evident. First, the CO2 (2nu(sub 3)) overtone near 2.134 micron (4685/ cm) that is not seen in pure solid CO2 is prominent in the spectrum of a CO2/H2O = 25 mixture. Second, a 2.74 micron (3650/ cm) dangling OH feature of water (and a potentially related peak at 1.89 micron) appear in the spectra of CO2-H2O ice mixtures, but may not be specific to the presence of CO2. Other CO2 peaks display shifts in position and increased width because of intermolecular interactions with water. Changes in CO2 peak positions and profiles on warming of a CO2/H2O = 5 mixture are consistent with 'segregation' of the ice into nearly pure separate components. Absolute strengths for absorptions of CO2 in solid H2O are estimated. Similar results are observed for CO2 in solid CH3OH. Since the CO2 ( 2nu(sub 3)) overtone near 2.134 micron (4685/ cm) is not present in pure CO2 but prominent in mixtures it may be a good observational indicator of whether solid CO2 is a pure material or intimately mixed with other molecules. Significant changes in the near IR spectrum of solid CO2 in the presence of H2O and CH3OH means that the abundance of solid CO2 in the

High-content analysis of single cells directly assembled on CMOS sensor based on color imaging.

Science.gov (United States)

Tanaka, Tsuyoshi; Saeki, Tatsuya; Sunaga, Yoshihiko; Matsunaga, Tadashi

2010-12-15

A complementary metal oxide semiconductor (CMOS) image sensor was applied to high-content analysis of single cells which were assembled closely or directly onto the CMOS sensor surface. The direct assembling of cell groups on CMOS sensor surface allows large-field (6.66 mm×5.32 mm in entire active area of CMOS sensor) imaging within a second. Trypan blue-stained and non-stained cells in the same field area on the CMOS sensor were successfully distinguished as white- and blue-colored images under white LED light irradiation. Furthermore, the chemiluminescent signals of each cell were successfully visualized as blue-colored images on CMOS sensor only when HeLa cells were placed directly on the micro-lens array of the CMOS sensor. Our proposed approach will be a promising technique for real-time and high-content analysis of single cells in a large-field area based on color imaging. Copyright © 2010 Elsevier B.V. All rights reserved.

CMOS-based avalanche photodiodes for direct particle detection

International Nuclear Information System (INIS)

Stapels, Christopher J.; Squillante, Michael R.; Lawrence, William G.; Augustine, Frank L.; Christian, James F.

2007-01-01

Active Pixel Sensors (APSs) in complementary metal-oxide-semiconductor (CMOS) technology are augmenting Charge-Coupled Devices (CCDs) as imaging devices and cameras in some demanding optical imaging applications. Radiation Monitoring Devices are investigating the APS concept for nuclear detection applications and has successfully migrated avalanche photodiode (APD) pixel fabrication to a CMOS environment, creating pixel detectors that can be operated with internal gain as proportional detectors. Amplification of the signal within the diode allows identification of events previously hidden within the readout noise of the electronics. Such devices can be used to read out a scintillation crystal, as in SPECT or PET, and as direct-conversion particle detectors. The charge produced by an ionizing particle in the epitaxial layer is collected by an electric field within the diode in each pixel. The monolithic integration of the readout circuitry with the pixel sensors represents an improved design compared to the current hybrid-detector technology that requires wire or bump bonding. In this work, we investigate designs for CMOS APD detector elements and compare these to typical values for large area devices. We characterize the achievable detector gain and the gain uniformity over the active area. The excess noise in two different pixel structures is compared. The CMOS APD performance is demonstrated by measuring the energy spectra of X-rays from 55 Fe

The total dose effects on the 1/f noise of deep submicron CMOS transistors

International Nuclear Information System (INIS)

Hu Rongbin; Wang Yuxin; Lu Wu

2014-01-01

Using 0.18 μm CMOS transistors, the total dose effects on the 1/f noise of deep-submicron CMOS transistors are studied for the first time in mainland China. From the experimental results and the theoretic analysis, we realize that total dose radiation causes a lot of trapped positive charges in STI (shallow trench isolation) SiO 2 layers, which induces a current leakage passage, increasing the 1/f noise power of CMOS transistors. In addition, we design some radiation-hardness structures on the CMOS transistors and the experimental results show that, until the total dose achieves 750 krad, the 1/f noise power of the radiation-hardness CMOS transistors remains unchanged, which proves our conclusion. (semiconductor devices)

Electrodeposition of textured Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires with enhanced electrical conductivity

Energy Technology Data Exchange (ETDEWEB)

Hasan, Maksudul, E-mail: maksudul.hasan@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Gautam, Devendraprakash [Tyndall National Institute, University College Cork, Lee Maltings, Cork (Ireland); Enright, Ryan [Thermal Management Research Group, Efficient Energy Transfer Department, Bell Labs Ireland, Alcatel-Lucent Ireland Ltd., Dublin (Ireland)

2016-04-15

This work presents the template based pulsed potential electrodeposition technique of highly textured single crystalline bismuth antimony telluride (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires from a single aqueous electrolyte. Cyclic voltammetry was used as an electroanalytical tool to assess the effect of the precursor concentrations on the composition of the deposits and to determine the deposition potential for each element. Pulsed potential electrodeposition was then applied on a gold-coated anodised alumina template to examine the effect of the pulse parameters on the composition and texture of Bi{sub 27}Sb{sub 28}Te{sub 45} nanowires. The nanowires are cylindrical in shape formed during the deposition inside the porous template and highly textured as they are decorated with sparse distribution of small crystal domains. The electrical conductivity (24.1 × 10{sup 4} S m{sup −1}) of a single nanowire was measured using a four-point probe technique implemented on a custom fabricated test chip. In this work, we demonstrated that crystal orientation with respect to the transport direction controlled by tuning the pulsed electrodeposition parameters. This allowed us to realise electrical conductivities ∼2.5 times larger than Sb doped bismuth-tellurium based ternary material systems and similar to what is typically seen in binary systems. - Highlights: • Pulsed electrodeposition is described towards fabrication of (Bi{sub 1-x}Sb{sub x}){sub 2}Te{sub 3} nanowires. • The adopted method is compatible with existing CMOS process. • The nanowires were fabricated as highly textured to enhance phonon scattering. • The electrical conductivity is ∼2.5 times larger than the current ternary materials.

Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

KAUST Repository

Ghoneim, Mohamed T.; Alfaraj, Nasir; Torres-Sevilla, Galo A.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

2016-01-01

. The devices were fabricated using the state-of-the-art CMOS technology and then transformed into flexible form by using a CMOS-compatible maskless deep reactive-ion etching technique. Mechanical out-of-plane stresses (compressive and tensile) were applied

Application of CMOS Technology to Silicon Photomultiplier Sensors

Science.gov (United States)

D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo

2017-01-01

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. PMID:28946675

Theory of circuit block switch-off

Directory of Open Access Journals (Sweden)

S. Henzler

2004-01-01

Full Text Available Switching-off unused circuit blocks is a promising approach to supress static leakage currents in ultra deep sub-micron CMOS digital systems. Basic performance parameters of Circuit Block Switch-Off (CBSO schemes are defined and their dependence on basic circuit parameters is estimated. Therefore the design trade-off between strong leakage suppression in idle mode and adequate dynamic performance in active mode can be supported by simple analytic investigations. Additionally, a guideline for the estimation of the minimum time for which a block deactivation is useful is derived.

Epoxy Chip-in-Carrier Integration and Screen-Printed Metalization for Multichannel Microfluidic Lab-on-CMOS Microsystems.

Science.gov (United States)

Li, Lin; Yin, Heyu; Mason, Andrew J

2018-04-01

The integration of biosensors, microfluidics, and CMOS instrumentation provides a compact lab-on-CMOS microsystem well suited for high throughput measurement. This paper describes a new epoxy chip-in-carrier integration process and two planar metalization techniques for lab-on-CMOS that enable on-CMOS electrochemical measurement with multichannel microfluidics. Several design approaches with different fabrication steps and materials were experimentally analyzed to identify an ideal process that can achieve desired capability with high yield and low material and tool cost. On-chip electrochemical measurements of the integrated assembly were performed to verify the functionality of the chip-in-carrier packaging and its capability for microfluidic integration. The newly developed CMOS-compatible epoxy chip-in-carrier process paves the way for full implementation of many lab-on-CMOS applications with CMOS ICs as core electronic instruments.

Introduction of performance boosters like Ge as channel material for the future of CMOS

Energy Technology Data Exchange (ETDEWEB)

Samia, Slimani, E-mail: slimani.samia@gmail.com [Faculty of Electrical and Computer Engineering Mouloud Mammeri University (UMMTO), BP 17 RP 15000, Tizi-Ouzou (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria); Bouaza, Djellouli, E-mail: djelbou@hotmail.fr [University of Saida, Department of Electronic (Algeria); Laboratoire de Modélisation et Méthodes de calcul LMMC,20002 Saida (Algeria)

2016-06-10

High mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. Ge is one of new attractive channel materials that require CMOS scaling For future technology nodes and future high performance P-MOSFETS, we have studied a nanoscale SOI DG MOSFETs using quantum simulation approach on DG MOSFETs within the variation of Ge channel concentration and in the presence of source and drain doping by replacing Silicon in the channel by Ge using various dielectric constant. The use of high mobility channel (like Ge) to maximize the MOSFET IDsat and simultaneously circumvent the poor electrostatic control to suppress short-channel effects and enhance source injection velocity. The leakage current (I{sub off}) can be controlled by different gates oxide thickness more ever the required threshold voltage (V{sub TH}) can be achieved by keeping gate work function and altering the doping channel.

CMOS SPDT switch for WLAN applications

International Nuclear Information System (INIS)

Bhuiyan, M A S; Reaz, M B I; Rahman, L F; Minhad, K N

2015-01-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal. (paper)

Cmos spdt switch for wlan applications

Science.gov (United States)

Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

2015-04-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

A piezoresistive cantilever for lateral force detection fabricated by a monolithic post-CMOS process

International Nuclear Information System (INIS)

Ji Xu; Li Zhihong; Li Juan; Wang Yangyuan; Xi Jianzhong

2008-01-01

This paper presents a post-CMOS process to monolithically integrate a piezoresistive cantilever for lateral force detection and signal processing circuitry. The fabrication process includes a standard CMOS process and one more lithography step to micromachine the cantilever structure in the post-CMOS process. The piezoresistors are doped in the CMOS process but defined in the post-CMOS micromachining process without any extra process required. A partially split cantilever configuration is developed for the lateral force detection. The piezoresistors are self-aligned to the split cantilever, and therefore the width of the beam is only limited by lithography. Consequently, this kind of cantilever potentially has a high resolution. The preliminary experimental results show expected performances of the fabricated piezoresistors and electronic circuits

CO{sub 2} separation

Energy Technology Data Exchange (ETDEWEB)

Hakuta, Toshikatu [National Inst. of Materials and Chemical Research, Ibaraki (Japan)

1993-12-31

The climate change induced by CO{sub 2} and other greenhouse gases is probably the most serious environmental threat that mankind has ever experienced. Nowadays fossil fuels occupy the majority of the world commercial energy supply. Most nations will be dependent on fossil fuels even in the first half of the next century. Around 30 % of CO{sub 2} in the world is emitted from thermal power plants. Recovering CO{sub 2} from energy conversion processes and storing it outside the atmosphere is a promising option for the mitigation of global warming. CO{sub 2} fixation and storage include CO{sub 2} disposal into oceans and underground, and utilization of CO{sub 2}. CO{sub 2} separation process will be used in any CO{sub 2} storage system, and is estimated to consume almost half the energy of the total system. Research and development of highly efficient CO{sub 2} separation process is most important from the viewpoint of practical application of CO{sub 2} fixation system.

Phase separation, crystallization and polyamorphism in the Y{sub 2}O{sub 3}-Al{sub 2}O{sub 3} system

Energy Technology Data Exchange (ETDEWEB)

Skinner, Lawrie B; Barnes, Adrian C [H H Wills Physics Laboratory, Royal Fort, Tyndall Avenue, Bristol BS8 1TL (United Kingdom); Salmon, Philip S [Department of Physics, University of Bath, Bath BA2 7AY (United Kingdom); Crichton, Wilson A [European Synchrotron Radiation Facility, 6 rue Jules Horowitz, BP 220, Grenoble Cedex, F-38043 (France)], E-mail: a.c.barnes@bristol.ac.uk

2008-05-21

A detailed study of glass formation from aerodynamically levitated liquids in the (Y{sub 2}O{sub 3}){sub x}(Al{sub 2}O{sub 3}){sub 1-x} system for the composition range 0.21{<=}x{<=}0.41 was undertaken by using pyrometric, optical imaging and x-ray diffraction methods. Homogeneous and clear single-phase glasses were produced over the composition range 0.27{<=}x{<=}0.33. For Y{sub 2}O{sub 3}-rich compositions (0.33{<=}x{<=}0.375), cloudy materials were produced which contain inclusions of crystalline yttrium aluminium garnet (YAG) of diameter up to 40 {mu}m in a glassy matrix. For Y{sub 2}O{sub 3}-poor compositions around x = 0.24, cloudy materials were also produced, but it was not possible to deduce whether this resulted from (i) sub-micron inclusions of a nano-crystalline or glassy material in a glassy matrix or (ii) a glass formed by spinodal decomposition. For x = 0.21, however, the sample cloudiness results from crystallization into at least two phases comprising yttrium aluminium perovskite and alumina. The associated pyrometric cooling curve shows slow recalescence events with a continuous and slow evolution of excess heat which contrasts with the sharp recalescence events observed for the crystallization of YAG at compositions near x = 0.375. The materials that are the most likely candidates for demonstrating homogeneous nucleation of a second liquid phase occur around x = 0.25, which corresponds to the limit for formation of a continuous random network of corner-shared AlO{sub 4} tetrahedra.

CMOS Pixel Development for the ATLAS Experiment at HL-LHC

CERN Document Server

Ristic, Branislav; The ATLAS collaboration

2017-01-01

To cope with the rate and radiation environment expected at the HL-LHC new approaches are being developed on CMOS pixel detectors, providing charge collection in a depleted layer. They are based on technologies that allow to use high depletion voltages (HV-MAPS) and high resistivity wafers (HR-MAPS) for large depletion depths; radiation hard processed with multiple nested wells to allow CMOS electronics to be embedded safely into the sensor substrate. We are investigating depleted CMOS pixels with monolithic or hybrid designs concerning their suitability for high rate, fast timing and high radiation operation at LHC. This paper will discuss recent results on the main candidate technologies and the current development towards a monolithic solution.

Radiation Induced Fault Analysis for Wide Temperature BiCMOS Circuits, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — State of the art Radiation Hardened by Design (RHBD) techniques do not account for wide temperature variations in BiCMOS process. Silicon-Germanium BiCMOS process...

CMOS voltage references an analytical and practical perspective

CERN Document Server

Kok, Chi-Wah

2013-01-01

A practical overview of CMOS circuit design, this book covers the technology, analysis, and design techniques of voltage reference circuits.  The design requirements covered follow modern CMOS processes, with an emphasis on low power, low voltage, and low temperature coefficient voltage reference design. Dedicating a chapter to each stage of the design process, the authors have organized the content to give readers the tools they need to implement the technologies themselves. Readers will gain an understanding of device characteristics, the practical considerations behind circuit topology,

Growth, thermal and spectral characteristics of Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} crystal

Energy Technology Data Exchange (ETDEWEB)

Yuan, Feifei [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China); University of Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Lizhen; Huang, Yisheng; Sun, Shijia [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China); Lin, Zhoubin, E-mail: lzb@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China); Wang, Guofu [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 (China)

2014-09-15

Highlights: • A new crystal of Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} was grown successfully from a Li{sub 6}B{sub 4}O{sub 9} flux. • Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} crystal has good thermal, mechanical and spectral properties. • Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} has long fluorescence lifetime, broad absorption and emission bands. - Abstract: A crystal of Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} was grown successfully from Li{sub 6}B{sub 4}O{sub 9} flux by the top-seeded solution growth method. The crystal's thermal, mechanical and spectral characteristics were investigated in detail. It possesses small thermal expansion coefficients, moderate thermal conductivities, and large hardness. The crystal has a strong absorption band at 967 nm with a full width at half-maximum of about 3.4 nm. The crystal has a broad emission band at 1016 nm with the full width at half-maximum of about 64 nm. The emission cross sections were calculated by reciprocity method and Füchtbauer-Ladenburg formula. The fluorescence lifetime is 5.98 ms. The results reveal that Yb{sup 3+}:Sr{sub 6}YSc(BO{sub 3}){sub 6} crystal is a new promising tunable and ultrashort pulse laser crystal.

Latch-up and radiation integrated circuit--LURIC: a test chip for CMOS latch-up investigation

International Nuclear Information System (INIS)

Estreich, D.B.

1978-11-01

A CMOS integrated circuit test chip (Latch-Up and Radiation Integrated Circuit--LURIC) designed for CMOS latch-up and radiation effects research is described. The purpose of LURIC is (a) to provide information on the physics of CMOS latch-up, (b) to study the layout dependence of CMOS latch-up, and (c) to provide special latch-up test structures for the development and verification of a latch-up model. Many devices and test patterns on LURIC are also well suited for radiation effects studies. LURIC contains 86 devices and related test structures. A 12-layer mask set allows both metal gate CMOS and silicon gate ELA (Extended Linear Array) CMOS to be fabricated. Six categories of test devices and related test structures are included. These are (a) the CD4007 metal gate CMOS IC with auxiliary test structures, (b) ELA CMOS cells, (c) field-aided lateral pnp transistors, (d) p-well and substrate spreading resistance test structures, (e) latch-up test structures (simplified symmetrical latch-up paths), and (f) support test patterns (e.g., MOS capacitors, p + n diodes, MOS test transistors, van der Pauw and Kelvin contact resistance test patterns, etc.). A standard probe pattern array has been used on all twenty-four subchips for testing convenience

Efavirenz Dissolution Enhancement I: Co-Micronization

Directory of Open Access Journals (Sweden)

Helvécio Vinícius Antunes Rocha

2012-12-01

Full Text Available AIDS constitutes one of the most serious infectious diseases, representing a major public health priority. Efavirenz (EFV, one of the most widely used drugs for this pathology, belongs to the Class II of the Biopharmaceutics Classification System for drugs with very poor water solubility. To improve EFV’s dissolution profile, changes can be made to the physical properties of the drug that do not lead to any accompanying molecular modifications. Therefore, the study objective was to develop and characterize systems with efavirenz able to improve its dissolution, which were co-processed with sodium lauryl sulfate (SLS and polyvinylpyrrolidone (PVP. The technique used was co-micronization. Three different drug:excipient ratios were tested for each of the two carriers. The drug dispersion dissolution results showed significant improvement for all the co-processed samples in comparison to non-processed material and corresponding physical mixtures. The dissolution profiles obtained for dispersion with co-micronized SLS samples proved superior to those of co-micronized PVP, with the proportion (1:0.25 proving the optimal mixture. The improvements may be explained by the hypothesis that formation of a hydrophilic layer on the surface of the micronized drug increases the wettability of the system formed, corroborated by characterization results indicating no loss of crystallinity and an absence of interaction at the molecular level.

Recent X-ray hybrid CMOS detector developments and measurements

Science.gov (United States)

Hull, Samuel V.; Falcone, Abraham D.; Burrows, David N.; Wages, Mitchell; Chattopadhyay, Tanmoy; McQuaide, Maria; Bray, Evan; Kern, Matthew

2017-08-01

The Penn State X-ray detector lab, in collaboration with Teledyne Imaging Sensors (TIS), have progressed their efforts to improve soft X-ray Hybrid CMOS detector (HCD) technology on multiple fronts. Having newly acquired a Teledyne cryogenic SIDECARTM ASIC for use with HxRG devices, measurements were performed with an H2RG HCD and the cooled SIDECARTM. We report new energy resolution and read noise measurements, which show a significant improvement over room temperature SIDECARTM operation. Further, in order to meet the demands of future high-throughput and high spatial resolution X-ray observatories, detectors with fast readout and small pixel sizes are being developed. We report on characteristics of new X-ray HCDs with 12.5 micron pitch that include in-pixel CDS circuitry and crosstalk-eliminating CTIA amplifiers. In addition, PSU and TIS are developing a new large-scale array Speedster-EXD device. The original 64 × 64 pixel Speedster-EXD prototype used comparators in each pixel to enable event driven readout with order of magnitude higher effective readout rates, which will now be implemented in a 550 × 550 pixel device. Finally, the detector lab is involved in a sounding rocket mission that is slated to fly in 2018 with an off-plane reflection grating array and an H2RG X-ray HCD. We report on the planned detector configuration for this mission, which will increase the NASA technology readiness level of X-ray HCDs to TRL 9.

George E. Pake Prize Lecture: CMOS Technology Roadmap: Is Scaling Ending?

Science.gov (United States)

Chen, Tze-Chiang (T. C.)

The development of silicon technology has been based on the principle of physics and driven by the system needs. Traditionally, the system needs have been satisfied by the increase in transistor density and performance, as suggested by Moore's Law and guided by ''Dennard CMOS scaling theory''. As the silicon industry moves towards the 14nm node and beyond, three of the most important challenges facing Moore's Law and continued CMOS scaling are the growing standby power dissipation, the increasing variability in device characteristics and the ever increasing manufacturing cost. Actually, the first two factors are the embodiments of CMOS approaching atomistic and quantum-mechanical physics boundaries. Industry directions for addressing these challenges are also developing along three primary approaches: Extending silicon scaling through innovations in materials and device structure, expanding the level of integration through three-dimensional structures comprised of through-silicon-vias holes and chip stacking in order to enhance functionality and parallelism and exploring post-silicon CMOS innovation with new nano-devices based on distinctly different principles of physics, new materials and new processes such as spintronics, carbon nanotubes and nanowires. Hence, the infusion of new materials, innovative integration and novel device structures will continue to extend CMOS technology scaling for at least another decade.

The review of radiation effects of γ total dose in CMOS circuits

International Nuclear Information System (INIS)

Chen Panxun; Gao Wenming; Xie Zeyuan; Mi Bang

1992-01-01

Radiation performances of commercial and rad-hard CMOS circuits are reviewed. Threshold voltage, static power current, V in -V out characteristic and propagation delay time related with total dose are presented for CMOS circuits from several manufacturing processes. The performance of radiation-annealing of experimental circuits had been observed for two years. The comparison has been made between the CMOS circuits made in China and the commercial RCA products. 60 Co γ source can serve as γ simulator of the nuclear explosion

Silicon CMOS optical receiver circuits with integrated thin-film compound semiconductor detectors

Science.gov (United States)

Brooke, Martin A.; Lee, Myunghee; Jokerst, Nan Marie; Camperi-Ginestet, C.

1995-04-01

While many circuit designers have tackled the problem of CMOS digital communications receiver design, few have considered the problem of circuitry suitable for an all CMOS digital IC fabrication process. Faced with a high speed receiver design the circuit designer will soon conclude that a high speed analog-oriented fabrication process provides superior performance advantages to a digital CMOS process. However, for applications where there are overwhelming reasons to integrate the receivers on the same IC as large amounts of conventional digital circuitry, the low yield and high cost of the exotic analog-oriented fabrication is no longer an option. The issues that result from a requirement to use a digital CMOS IC process cut across all aspects of receiver design, and result in significant differences in circuit design philosophy and topology. Digital ICs are primarily designed to yield small, fast CMOS devices for digital logic gates, thus no effort is put into providing accurate or high speed resistances, or capacitors. This lack of any reliable resistance or capacitance has a significant impact on receiver design. Since resistance optimization is not a prerogative of the digital IC process engineer, the wisest option is thus to not use these elements, opting instead for active circuitry to replace the functions normally ascribed to resistance and capacitance. Depending on the application receiver noise may be a dominant design constraint. The noise performance of CMOS amplifiers is different than bipolar or GaAs MESFET circuits, shot noise is generally insignificant when compared to channel thermal noise. As a result the optimal input stage topology is significantly different for the different technologies. It is found that, at speeds of operation approaching the limits of the digital CMOS process, open loop designs have noise-power-gain-bandwidth tradeoff performance superior to feedback designs. Furthermore, the lack of good resisters and capacitors

An experimental study of solid source diffusion by spin on dopants and its application for minimal silicon-on-insulator CMOS fabrication

Science.gov (United States)

Liu, Yongxun; Koga, Kazuhiro; Khumpuang, Sommawan; Nagao, Masayoshi; Matsukawa, Takashi; Hara, Shiro

2017-06-01

Solid source diffusions of phosphorus (P) and boron (B) into the half-inch (12.5 mm) minimal silicon (Si) wafers by spin on dopants (SOD) have been systematically investigated and the physical-vapor-deposited (PVD) titanium nitride (TiN) metal gate minimal silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs) have successfully been fabricated using the developed SOD thermal diffusion technique. It was experimentally confirmed that a low temperature oxidation (LTO) process which depresses a boron silicide layer formation is effective way to remove boron-glass in a diluted hydrofluoric acid (DHF) solution. It was also found that top Si layer thickness of SOI wafers is reduced in the SOD thermal diffusion process because of its consumption by thermal oxidation owing to the oxygen atoms included in SOD films, which should be carefully considered in the ultrathin SOI device fabrication. Moreover, normal operations of the fabricated minimal PVD-TiN metal gate SOI-CMOS inverters, static random access memory (SRAM) cells and ring oscillators have been demonstrated. These circuit level results indicate that no remarkable particles and interface traps were introduced onto the minimal wafers during the device fabrication, and the developed solid source diffusion by SOD is useful for the fabrication of functional logic gate minimal SOI-CMOS integrated circuits.

An Implantable CMOS Amplifier for Nerve Signals

DEFF Research Database (Denmark)

Nielsen, Jannik Hammel; Lehmann, Torsten

2001-01-01

In this paper, a low noise high gain CMOS amplifier for minute nerve signals is presented. By using a mixture of weak- and strong inversion transistors, optimal noise suppression in the amplifier is achieved. A continuous-time offset-compensation technique is utilized in order to minimize impact...... on the amplifier input nodes. The method for signal recovery from noisy nerve signals is presented. A prototype amplifier is realized in a standard digital 0.5 μm CMOS single poly, n-well process. The prototype amplifier features a gain of 80 dB over a 3.6 kHz bandwidth, a CMRR of more than 87 dB and a PSRR...

Latch-up control in CMOS integrated circuits

International Nuclear Information System (INIS)

Ochoa, A. Jr.; Estreich, D.B.; Dawes, W.R. Jr.

1979-01-01

The potential for latch-up, a pnpn self-sustaining low impedance state, is inherent in standard bulk CMOS structures. Under normal bias, the parasitic SCR is in its blocking state, but if subjected to a high-voltage spike or if exposed to an ionizing environment, triggering may occur. Prevention of latch-up has been achieved by lifetime control methods such as gold doping or neutron irradiation and by modifying the structure with buried layers. Smaller, next-generation CMOS designs will enhance parasitic action making the problem a concern for other than military or space applications alone. Latch-up control methods presently employed are surveyed. Their adaptability to VSLI designs is analyzed

The US Geological Survey, digital spectral reflectance library: version 1: 0.2 to 3.0 microns

Science.gov (United States)

Clark, Roger N.; Swayze, Gregg A.; King, Trude V. V.; Gallagher, Andrea J.; Calvin, Wendy M.

1993-01-01

We have developed a digital reflectance spectral library, with management and spectral analysis software. The library includes 500 spectra of 447 samples (some samples include a series of grain sizes) measured from approximately 0.2 to 3.0 microns. The spectral resolution (Full Width Half Maximum) of the reflectance data is less than or equal to 4 nm in the visible (0.2-0.8 microns) and less than or equal 10 nm in the NIR (0.8-2.35 microns). All spectra were corrected to absolute reflectance using an NBS Halon standard. Library management software lets users search on parameters (e.g. chemical formulae, chemical analyses, purity of samples, mineral groups, etc.) as well as spectral features. Minerals from sulfide, oxide, hydroxide, halide, carbonate, nitrate, borate, phosphate, and silicate groups are represented. X-ray and chemical analyses are tabulated for many of the entries, and all samples have been evaluated for spectral purity. The library also contains end and intermediate members for the olivine, garnet, scapolite, montmorillonite, muscovite, jarosite, and alunite solid-solution series. We have included representative spectra of H2O ice, kerogen, ammonium-bearing minerals, rare-earth oxides, desert varnish coatings, kaolinite crystallinity series, kaolinite-smectite series, zeolite series, and an extensive evaporite series. Because of the importance of vegetation to climate-change studies we have include 17 spectra of tree leaves, bushes, and grasses.

A novel CMOS SRAM feedback element for SEU environments

International Nuclear Information System (INIS)

Verghese, S.; Wortman, J.J.; Kerns, S.E.

1987-01-01

A hardened CMOS SRAM has been proposed which utilizes a leaky polysilicon Schottky diode placed in the feedback path to attain the SEU immunity of resistor-coupled SRAMs while improving the access speed of the cell. Novel polysilicon hybrid Schottky-resistor structures which emulate the leaky diodes have been designed and fabricated. The elements' design criteria and methods of fulfilling them are presented along with a practical implementation scheme for CMOS SRAM cells

Materials Characterization of CIGS solar cells on Top of CMOS chips

NARCIS (Netherlands)

Lu, J.; Liu, W.; Kovalgin, A.Y.; Sun, Y.; Schmitz, J.; Venkatasubramanian, R.; Radousky, H.; Liang, H.

2011-01-01

In the current work, we present a detailed study on the material properties of the CIGS layers, fabricated on top of the CMOS chips, and compare the results with the fabrication on standard glass substrates. Almost identical elemental composition on both glass and CMOS chips (within measurement

Radiation imaging detectors made by wafer post-processing of CMOS chips

NARCIS (Netherlands)

Blanco Carballo, V.M.

2009-01-01

In this thesis several wafer post-processing steps have been applied to CMOS chips. Amplification gas strucutures are built on top of the microchips. A complete radiation imaging detector is obtained this way. Integrated Micromegas-like and GEM-like structures were fabricated on top of Timepix CMOS

Two CMOS BGR using CM and DTMOST techniques

International Nuclear Information System (INIS)

Mohd-Yasin, F.; Teh, Y.K.; Choong, F.; Reaz, M.B.I.

2009-06-01

Two CMOS BGR using current mode (0.044mm 2 ) and Dynamic Threshold MOST (0.017mm 2 ) techniques are designed on CMOS 0.18μm process. On-wafer measurement shows both circuits have minimum operating V DD 1.28V at 25 o C; taking 2.1μA and 0.5μA (maximum current 3.1μA and 1.1μA) and output voltage of 514mV and 457mV. Both circuits could support V DD range up to 4V required by passive UHF RFID. (author)

Airborne spectrophotometry of P/Halley from 16 to 30 microns

Science.gov (United States)

Herter, T.; Gull, G. E.; Campins, H.

1986-01-01

Comet Halley was observed in the 16 to 30 micron region using the Cornell University 7-channel spectrometer (resolution = 0.02) on board the Kuiper Airborne Observatory on 1985 Dec. 14.2. A 30-arcsec aperture (FWHM) was used. Measurements centered on the nuclear condensation micron indicate that if present, the 20 micron silicate feature is very weak, and that a relatively narrow strong feature centered at 28.4 microns possibly exists. However, this feature may be an artifact of incomplete correction for telluric water vapor absorption.

A CMOS silicon spin qubit

Science.gov (United States)

Maurand, R.; Jehl, X.; Kotekar-Patil, D.; Corna, A.; Bohuslavskyi, H.; Laviéville, R.; Hutin, L.; Barraud, S.; Vinet, M.; Sanquer, M.; de Franceschi, S.

2016-11-01

Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.

Analog filters in nanometer CMOS

CERN Document Server

Uhrmann, Heimo; Zimmermann, Horst

2014-01-01

Starting from the basics of analog filters and the poor transistor characteristics in nanometer CMOS 10 high-performance analog filters developed by the authors in 120 nm and 65 nm CMOS are described extensively. Among them are gm-C filters, current-mode filters, and active filters for system-on-chip realization for Bluetooth, WCDMA, UWB, DVB-H, and LTE applications. For the active filters several operational amplifier designs are described. The book, furthermore, contains a review of the newest state of research on low-voltage low-power analog filters. To cover the topic of the book comprehensively, linearization issues and measurement methods for the characterization of advanced analog filters are introduced in addition. Numerous elaborate illustrations promote an easy comprehension. This book will be of value to engineers and researchers in industry as well as scientists and Ph.D students at universities. The book is also recommendable to graduate students specializing on nanoelectronics, microelectronics ...

Sub Tenth Micron CMOS Devices - A Demonstration of the Virtual Factory Approach to New Structure Design

National Research Council Canada - National Science Library

Plummer, James L

1995-01-01

...'. This project is exploring the use of advanced TCAD simulation tools to design a candidate 21st century MOS device - a fully-depleted surrounding gate vertical MOSFET with self-aligned drain contact...

A digital output accelerometer using MEMS-based piezoelectric accelerometers and arrayed CMOS inverters with satellite capacitors

International Nuclear Information System (INIS)

Kobayashi, T; Okada, H; Maeda, R; Itoh, T; Masuda, T

2011-01-01

The present paper describes the development of a digital output accelerometer composed of microelectromechanical systems (MEMS)-based piezoelectric accelerometers and arrayed complementary metal–oxide–semiconductor (CMOS) inverters accompanied by capacitors. The piezoelectric accelerometers were fabricated from multilayers of Pt/Ti/PZT/Pt/Ti/SiO 2 deposited on silicon-on-insulator (SOI) wafers. The fabricated piezoelectric accelerometers were connected to arrayed CMOS inverters. Each of the CMOS inverters was accompanied by a capacitor with a different capacitance called a 'satellite capacitor'. We have confirmed that the output voltage generated from the piezoelectric accelerometers can vary the output of the CMOS inverters from a high to a low level; the state of the CMOS inverters has turned from the 'off-state' into the 'on-state' when the output voltage of the piezoelectric accelerometers is larger than the threshold voltage of the CMOS inverters. We have also confirmed that the CMOS inverters accompanied by the larger satellite capacitor have become 'on-state' at a lower acceleration. On increasing the acceleration, the number of on-state CMOS inverters has increased. Assuming that the on-state and off-state of CMOS inverters correspond to logic '0' and '1', the present digital output accelerometers have expressed the accelerations of 2.0, 3.0, 5.0, and 5.5 m s −2 as digital outputs of 111, 110, 100, and 000, respectively

Simple BiCMOS CCCTA design and resistorless analog function realization.

Science.gov (United States)

Tangsrirat, Worapong

2014-01-01

The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA) in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (R x) and current transfer (i o/i z), are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

Simple BiCMOS CCCTA Design and Resistorless Analog Function Realization

Directory of Open Access Journals (Sweden)

Worapong Tangsrirat

2014-01-01

Full Text Available The simple realization of the current-controlled conveyor transconductance amplifier (CCCTA in BiCMOS technology is introduced. The proposed BiCMOS CCCTA realization is based on the use of differential pair and basic current mirror, which results in simple structure. Its characteristics, that is, parasitic resistance (Rx and current transfer (io/iz, are also tunable electronically by external bias currents. The realized circuit is suitable for fabrication using standard 0.35 μm BiCMOS technology. Some simple and compact resistorless applications employing the proposed CCCTA as active elements are also suggested, which show that their circuit characteristics with electronic controllability are obtained. PSPICE simulation results demonstrating the circuit behaviors and confirming the theoretical analysis are performed.

Micronization increases vitamin E carrying and releasing abilities of insoluble fiber.

Science.gov (United States)

Hsu, Pang-Kuei; Chien, Po-Jung; Chau, Chi-Fai

2008-03-26

This study was to investigate the effects of micronization on vitamin-carrying capacity and slow-release ability of carambola (starfruit) insoluble fiber (IF) and cellulose using in vitro and in vivomodels. Upon micronization, carambola IF (8.1 microm) underwent structural changes to expose more functional groups in the fiber matrix and to exhibit higher oil-holding capacity ( approximately 20.4-fold). Micronized fibers in forms of fiber-vitamin composites, particularly the micronized carambola IF-vitamin composite, were capable of carrying vitamin E (alpha-tocopherol) up to 9.6-fold over their unmicronized forms and releasing nutrient gradually. Animal studies demonstrated that the adminstration of micronized carambola IF-vitamin composite could maintain the plasma vitamin E of rats at relatively higher levels (2.1-3.6-fold of the initial values) for at least 5 h. The results suggested that micronized fibers, particularly the micronized carambola IF, could be exploited as potential nutrient carriers in food applications and also be used to produce slow-release formulations.

Latch-up in CMOS integrated circuits

International Nuclear Information System (INIS)

Estreich, D.B.; Dutton, R.W.

1978-04-01

An analysis is presented of latch-up in CMOS integrated circuits. A latch-up prediction algorithm has been developed and used to evaluate methods to control latch-up. Experimental verification of the algorithm is demonstrated

CMOS analog integrated circuit design technology; CMOS anarogu IC sekkei gijutsu

Energy Technology Data Exchange (ETDEWEB)

Fujimoto, H.; Fujisawa, A. [Fuji Electric Co. Ltd., Tokyo (Japan)

2000-08-10

In the field of the LSI (large scale integrated circuit) in rapid progress toward high integration and advanced functions, CAD (computer-aided design) technology has become indispensable to LSI development within a short period. Fuji Electric has developed design technologies and automatic design system to develop high-quality analog ICs (integrated circuits), including power supply ICs. within a short period. This paper describes CMOS (complementary metal-oxide semiconductor) analog macro cell, circuit simulation, automatic routing, and backannotation technologies. (author)

Correlation of infrared reflectance ratios at 2.3 microns/1.6 micron and 1.1 micron/1.6 micron with delta O-18 values delineating fossil hydrothermal systems in the Idaho batholith

Science.gov (United States)

Gillespie, A. R.; Criss, R. E.

1983-01-01

Reflectance ratios from laboratory spectra and airborne multispectral images are found to be strongly correlated with delta O-18 values of granite rocks in the Idaho batholith. The correlation is largely a result of interactions between hot water and rock, which lowered the delta O-18 values of the rocks and produced secondary hydrous material. Maps of the ratio of reflectivities at 2.3 and 1.6 microns should delineate fossil hydrothermal systems and provide estimates of alteration intensity. However, hydrous minerals produced during deuteric alteration or weathering cannot be unambiguously distinguished in remotely sensed images from the products of propylitic alteration without the use of narrow-band scanners. The reflectivity at 1.6 micron is strongly correlated with rock density and may be useful in distinguishing rock types in granitic terranes.

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Directory of Open Access Journals (Sweden)

Fangming Deng

2014-05-01

Full Text Available This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

A CMOS Humidity Sensor for Passive RFID Sensing Applications

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-01-01

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 μW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs. PMID:24841250

A CMOS humidity sensor for passive RFID sensing applications.

Science.gov (United States)

Deng, Fangming; He, Yigang; Zhang, Chaolong; Feng, Wei

2014-05-16

This paper presents a low-cost low-power CMOS humidity sensor for passive RFID sensing applications. The humidity sensing element is implemented in standard CMOS technology without any further post-processing, which results in low fabrication costs. The interface of this humidity sensor employs a PLL-based architecture transferring sensor signal processing from the voltage domain to the frequency domain. Therefore this architecture allows the use of a fully digital circuit, which can operate on ultra-low supply voltage and thus achieves low-power consumption. The proposed humidity sensor has been fabricated in the TSMC 0.18 μm CMOS process. The measurements show this humidity sensor exhibits excellent linearity and stability within the relative humidity range. The sensor interface circuit consumes only 1.05 µW at 0.5 V supply voltage and reduces it at least by an order of magnitude compared to previous designs.

Design and fabrication of a CMOS-compatible MHP gas sensor

Directory of Open Access Journals (Sweden)

Ying Li

2014-03-01

Full Text Available A novel micro-hotplate (MHP gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO2 film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3% in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

High-Speed Scanning Interferometer Using CMOS Image Sensor and FPGA Based on Multifrequency Phase-Tracking Detection

Science.gov (United States)

Ohara, Tetsuo

2012-01-01

A sub-aperture stitching optical interferometer can provide a cost-effective solution for an in situ metrology tool for large optics; however, the currently available technologies are not suitable for high-speed and real-time continuous scan. NanoWave s SPPE (Scanning Probe Position Encoder) has been proven to exhibit excellent stability and sub-nanometer precision with a large dynamic range. This same technology can transform many optical interferometers into real-time subnanometer precision tools with only minor modification. The proposed field-programmable gate array (FPGA) signal processing concept, coupled with a new-generation, high-speed, mega-pixel CMOS (complementary metal-oxide semiconductor) image sensor, enables high speed (>1 m/s) and real-time continuous surface profiling that is insensitive to variation of pixel sensitivity and/or optical transmission/reflection. This is especially useful for large optics surface profiling.

Desenvolvimento de uma matriz de portas CMOS

OpenAIRE

Jose Geraldo Mendes Taveira

1991-01-01

Resumo: É apresentado o projeto de uma matriz deportas CMOS. O capítulo 11 descreve as etapas de projeto, incluindo desde a escolha da topologia das células internas e de interface, o projeto e a simulação elétrica, até a geração do lay-out. Ocaprtulo III apresenta o projeto dos circuitos de aplicação, incluídos para permitir a validação da matriz. Os circuitos de apl icação são : Oscilador em anel e comparador de códigos. A matriz foi difundida no Primeiro Projeto Multi-Usuário CMOS Brasile...

Ultralow-loss CMOS copper plasmonic waveguides

DEFF Research Database (Denmark)

Fedyanin, Dmitry Yu.; Yakubovsky, Dmitry I.; Kirtaev, Roman V.

2016-01-01

with microelectronics manufacturing technologies. This prevents plasmonic components from integration with both silicon photonics and silicon microelectronics. Here, we demonstrate ultralow-loss copper plasmonic waveguides fabricated in a simple complementary metal-oxide semiconductor (CMOS) compatible process, which...

The ArTéMiS wide-field sub-millimeter camera: preliminary on-sky performance at 350 microns

Science.gov (United States)

Revéret, Vincent; André, Philippe; Le Pennec, Jean; Talvard, Michel; Agnèse, Patrick; Arnaud, Agnès.; Clerc, Laurent; de Breuck, Carlos; Cigna, Jean-Charles; Delisle, Cyrille; Doumayrou, Eric; Duband, Lionel; Dubreuil, Didier; Dumaye, Luc; Ercolani, Eric; Gallais, Pascal; Groult, Elodie; Jourdan, Thierry; Leriche, Bernadette; Maffei, Bruno; Lortholary, Michel; Martignac, Jérôme; Rabaud, Wilfried; Relland, Johan; Rodriguez, Louis; Vandeneynde, Aurélie; Visticot, François

2014-07-01

ArTeMiS is a wide-field submillimeter camera operating at three wavelengths simultaneously (200, 350 and 450 μm). A preliminary version of the instrument equipped with the 350 μm focal plane, has been successfully installed and tested on APEX telescope in Chile during the 2013 and 2014 austral winters. This instrument is developed by CEA (Saclay and Grenoble, France), IAS (France) and University of Manchester (UK) in collaboration with ESO. We introduce the mechanical and optical design, as well as the cryogenics and electronics of the ArTéMiS camera. ArTeMiS detectors consist in Si:P:B bolometers arranged in 16×18 sub-arrays operating at 300 mK. These detectors are similar to the ones developed for the Herschel PACS photometer but they are adapted to the high optical load encountered at APEX site. Ultimately, ArTeMiS will contain 4 sub-arrays at 200 μm and 2×8 sub-arrays at 350 and 450 μm. We show preliminary lab measurements like the responsivity of the instrument to hot and cold loads illumination and NEP calculation. Details on the on-sky commissioning runs made in 2013 and 2014 at APEX are shown. We used planets (Mars, Saturn, Uranus) to determine the flat-field and to get the flux calibration. A pointing model was established in the first days of the runs. The average relative pointing accuracy is 3 arcsec. The beam at 350 μm has been estimated to be 8.5 arcsec, which is in good agreement with the beam of the 12 m APEX dish. Several observing modes have been tested, like "On- The-Fly" for beam-maps or large maps, spirals or raster of spirals for compact sources. With this preliminary version of ArTeMiS, we concluded that the mapping speed is already more than 5 times better than the previous 350 μm instrument at APEX. The median NEFD at 350 μm is 600 mJy.s1/2, with best values at 300 mJy.s1/2. The complete instrument with 5760 pixels and optimized settings will be installed during the first half of 2015.

A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.

Science.gov (United States)

Chakrabarti, B; Lastras-Montaño, M A; Adam, G; Prezioso, M; Hoskins, B; Payvand, M; Madhavan, A; Ghofrani, A; Theogarajan, L; Cheng, K-T; Strukov, D B

2017-02-14

Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.

The impact transconductance parameter and threshold voltage of MOSFET’s in static characteristics of CMOS inverter

Directory of Open Access Journals (Sweden)

Milaim Zabeli

2017-11-01

Full Text Available The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements.

Half-lives for proton emission, alpha decay, cluster radioactivity, and cold fission processes calculated in a unified theoretical framework

Energy Technology Data Exchange (ETDEWEB)

Duarte, S.B.; Tavares, O.A.P.; Guzman, F.; Dimarco, A. [Centro Brasileiro de Pesquisas Fisicas (CBPF), Rio de Janeiro, RJ (Brazil); Garcia, F. [Sao Paulo Univ., SP (Brazil). Inst. de Fisica; Universidade Estadual de Santa Cruz, Ilheus, BA (Brazil). Dept. de Ciencias Exatas e Tecnologicas; Rodriguez, O. [Sao Paulo Univ., SP (Brazil). Inst. de Fisica; Instituto Superior de Ciencias e Tecnologia Nucleares, La Habana (Cuba); Goncalves, M. [Instituto de Radioprotecao e Dosimetria (IRD), Rio de Janeiro, RJ (Brazil)

2002-01-01

Half-life values of spontaneous nuclear decay processes are presented in the framework of the Effective Liquid Drop Model (ELDM) using the combination of varying mass asymmetry shape description for the mass transfer with Werner-Wheeler's inertia coefficient V{sub MAS}/WW. The calculated half-lives of ground-state to ground-state transitions for the proton emission, alpha decay, cluster radioactivity, and cold fission processes are compared with experimental data. Results have shown that the ELDM is a very efficient model to describe these different decay processes in a same, unified theoretical framework. A Table listing the predicted half-life values, {tau}{sub c} is presented for all possible cases of spontaneous nuclear break-up such that -7.30 <{approx_equal} log{sub 10} {tau}{sub c} [S] <{approx_equal} 27.50 and log {sub 10}({tau}/{tau}{sub c}) > -17.0, where {tau} is the total half-life of the parent nucleus. (author)

Ellipsometric investigation of nitrogen doped diamond thin films grown in microwave CH{sub 4}/H{sub 2}/N{sub 2} plasma enhanced chemical vapor deposition

Energy Technology Data Exchange (ETDEWEB)

Ficek, Mateusz, E-mail: rbogdan@eti.pg.gda.pl [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Sankaran, Kamatchi J.; Haenen, Ken [Institute for Materials Research (IMO), Hasselt University, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); IMOMEC, IMEC vzw, Wetenschapspark 1, B-3590 Diepenbeek (Belgium); Ryl, Jacek; Darowicki, Kazimierz [Department of Electrochemistry, Corrosion and Material Engineering, Gdansk University of Technology, 11/12 Narutowicza St., 80-233 Gdansk (Poland); Bogdanowicz, Robert [Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdansk University of Technology, 11/12 G. Narutowicza St., 80-233 Gdansk (Poland); Materials and Process Simulation Center, California Institute of Technology, Pasadena, California 91125 (United States); Lin, I-Nan [Department of Physics, Tamkang University, Tamsui 251, Taiwan (China)

2016-06-13

The influence of N{sub 2} concentration (1%–8%) in CH{sub 4}/H{sub 2}/N{sub 2} plasma on structure and optical properties of nitrogen doped diamond (NDD) films was investigated. Thickness, roughness, and optical properties of the NDD films in the VIS–NIR range were investigated on the silicon substrates using spectroscopic ellipsometry. The samples exhibited relatively high refractive index (2.6 ± 0.25 at 550 nm) and extinction coefficient (0.05 ± 0.02 at 550 nm) with a transmittance of 60%. The optical investigation was supported by the molecular and atomic data delivered by Raman studies, bright field transmission electron microscopy imaging, and X-ray photoelectron spectroscopy diagnostics. Those results revealed that while the films grown in CH{sub 4}/H{sub 2} plasma contained micron-sized diamond grains, the films grown using CH{sub 4}/H{sub 2}/(4%)N{sub 2} plasma exhibited ultranano-sized diamond grains along with n-diamond and i-carbon clusters, which were surrounded by amorphous carbon grain boundaries.

Improved Space Object Orbit Determination Using CMOS Detectors

Science.gov (United States)

Schildknecht, T.; Peltonen, J.; Sännti, T.; Silha, J.; Flohrer, T.

2014-09-01

CMOS-sensors, or in general Active Pixel Sensors (APS), are rapidly replacing CCDs in the consumer camera market. Due to significant technological advances during the past years these devices start to compete with CCDs also for demanding scientific imaging applications, in particular in the astronomy community. CMOS detectors offer a series of inherent advantages compared to CCDs, due to the structure of their basic pixel cells, which each contains their own amplifier and readout electronics. The most prominent advantages for space object observations are the extremely fast and flexible readout capabilities, feasibility for electronic shuttering and precise epoch registration, and the potential to perform image processing operations on-chip and in real-time. The major challenges and design drivers for ground-based and space-based optical observation strategies have been analyzed. CMOS detector characteristics were critically evaluated and compared with the established CCD technology, especially with respect to the above mentioned observations. Similarly, the desirable on-chip processing functionalities which would further enhance the object detection and image segmentation were identified. Finally, we simulated several observation scenarios for ground- and space-based sensor by assuming different observation and sensor properties. We will introduce the analyzed end-to-end simulations of the ground- and space-based strategies in order to investigate the orbit determination accuracy and its sensitivity which may result from different values for the frame-rate, pixel scale, astrometric and epoch registration accuracies. Two cases were simulated, a survey using a ground-based sensor to observe objects in LEO for surveillance applications, and a statistical survey with a space-based sensor orbiting in LEO observing small-size debris in LEO. The ground-based LEO survey uses a dynamical fence close to the Earth shadow a few hours after sunset. For the space-based scenario

Low-voltage CMOS operational amplifiers theory, design and implementation

CERN Document Server

Sakurai, Satoshi

1995-01-01

Low-Voltage CMOS Operational Amplifiers: Theory, Design and Implementation discusses both single and two-stage architectures. Opamps with constant-gm input stage are designed and their excellent performance over the rail-to-rail input common mode range is demonstrated. The first set of CMOS constant-gm input stages was introduced by a group from Technische Universiteit, Delft and Universiteit Twente, the Netherlands. These earlier versions of circuits are discussed, along with new circuits developed at the Ohio State University. The design, fabrication (MOSIS Tiny Chips), and characterization of the new circuits are now complete. Basic analog integrated circuit design concepts should be understood in order to fully appreciate the work presented. However, the topics are presented in a logical order and the circuits are explained in great detail, so that Low-Voltage CMOS Operational Amplifiers can be read and enjoyed by those without much experience in analog circuit design. It is an invaluable reference boo...

Multi-target electrochemical biosensing enabled by integrated CMOS electronics

International Nuclear Information System (INIS)

Rothe, J; Lewandowska, M K; Heer, F; Frey, O; Hierlemann, A

2011-01-01

An integrated electrochemical measurement system, based on CMOS technology, is presented, which allows the detection of several analytes in parallel (multi-analyte) and enables simultaneous monitoring at different locations (multi-site). The system comprises a 576-electrode CMOS sensor chip, an FPGA module for chip control and data processing, and the measurement laptop. The advantages of the highly versatile system are demonstrated by two applications. First, a label-free, hybridization-based DNA sensor is enabled by the possibility of large-scale integration in CMOS technology. Second, the detection of the neurotransmitter choline is presented by assembling the chip with biosensor microprobe arrays. The low noise level enables a limit of detection of, e.g., 0.3 µM choline. The fully integrated system is self-contained: it features cleaning, functionalization and measurement functions without the need for additional electrical equipment. With the power supplied by the laptop, the system is very suitable for on-site measurements

3 micron spectrophotometry of Comet Halley - Evidence for water ice

Science.gov (United States)

Bregman, Jesse D.; Tielens, A. G. G. M.; Witteborn, Fred C.; Rank, David M.; Wooden, Diane

1988-01-01

Structure has been observed in the 3-3.6 micron preperihelion spectrum of Comet Halley consistent with either an absorption band near 3.1 microns or emission near 3.3 microns. The results suggest that a large fraction of the water molecules lost by the comet are initially ejected in the form of small ice particles rather than in the gas phase.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

International Nuclear Information System (INIS)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.

2016-01-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Science.gov (United States)

Fadeyev, V.; Galloway, Z.; Grabas, H.; Grillo, A. A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J.; Affolder, A.; Buckland, M.; Meng, L.; Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I.; Vigani, L.; Bates, R.; Blue, A.; Buttar, C.; Kanisauskas, K.; Maneuski, D.; Benoit, M.; Di Bello, F.; Caragiulo, P.; Dragone, A.; Grenier, P.; Kenney, C.; Rubbo, F.; Segal, J.; Su, D.; Tamma, C.; Das, D.; Dopke, J.; Turchetta, R.; Wilson, F.; Worm, S.; Ehrler, F.; Peric, I.; Gregor, I. M.; Stanitzki, M.; Hoeferkamp, M.; Seidel, S.; Hommels, L. B. A.; Kramberger, G.; Mandić, I.; Mikuž, M.; Muenstermann, D.; Wang, R.; Zhang, J.; Warren, M.; Song, W.; Xiu, Q.; Zhu, H.

2016-09-01

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

Investigation of HV/HR-CMOS technology for the ATLAS Phase-II Strip Tracker Upgrade

Energy Technology Data Exchange (ETDEWEB)

Fadeyev, V., E-mail: fadeyev@ucsc.edu [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Galloway, Z.; Grabas, H.; Grillo, A.A.; Liang, Z.; Martinez-Mckinney, F.; Seiden, A.; Volk, J. [Santa Cruz Institute for Particle Physics, University of California, Santa Cruz, CA 95064 (United States); Affolder, A.; Buckland, M.; Meng, L. [Department of Physics, University of Liverpool, O. Lodge Laboratory, Oxford Street, Liverpool L69 7ZE (United Kingdom); Arndt, K.; Bortoletto, D.; Huffman, T.; John, J.; McMahon, S.; Nickerson, R.; Phillips, P.; Plackett, R.; Shipsey, I. [Department of Physics, Oxford University, Oxford (United Kingdom); and others

2016-09-21

ATLAS has formed strip CMOS project to study the use of CMOS MAPS devices as silicon strip sensors for the Phase-II Strip Tracker Upgrade. This choice of sensors promises several advantages over the conventional baseline design, such as better resolution, less material in the tracking volume, and faster construction speed. At the same time, many design features of the sensors are driven by the requirement of minimizing the impact on the rest of the detector. Hence the target devices feature long pixels which are grouped to form a virtual strip with binary-encoded z position. The key performance aspects are radiation hardness compatibility with HL-LHC environment, as well as extraction of the full hit position with full-reticle readout architecture. To date, several test chips have been submitted using two different CMOS technologies. The AMS 350 nm is a high voltage CMOS process (HV-CMOS), that features the sensor bias of up to 120 V. The TowerJazz 180 nm high resistivity CMOS process (HR-CMOS) uses a high resistivity epitaxial layer to provide the depletion region on top of the substrate. We have evaluated passive pixel performance, and charge collection projections. The results strongly support the radiation tolerance of these devices to radiation dose of the HL-LHC in the strip tracker region. We also describe design features for the next chip submission that are motivated by our technology evaluation.

A scalable neural chip with synaptic electronics using CMOS integrated memristors

International Nuclear Information System (INIS)

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-01-01

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal–oxide–semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior. (paper)

Proof of principle study of the use of a CMOS active pixel sensor for proton radiography.

Science.gov (United States)

Seco, Joao; Depauw, Nicolas

2011-02-01

Proof of principle study of the use of a CMOS active pixel sensor (APS) in producing proton radiographic images using the proton beam at the Massachusetts General Hospital (MGH). A CMOS APS, previously tested for use in s-ray radiation therapy applications, was used for proton beam radiographic imaging at the MGH. Two different setups were used as a proof of principle that CMOS can be used as proton imaging device: (i) a pen with two metal screws to assess spatial resolution of the CMOS and (ii) a phantom with lung tissue, bone tissue, and water to assess tissue contrast of the CMOS. The sensor was then traversed by a double scattered monoenergetic proton beam at 117 MeV, and the energy deposition inside the detector was recorded to assess its energy response. Conventional x-ray images with similar setup at voltages of 70 kVp and proton images using commercial Gafchromic EBT 2 and Kodak X-Omat V films were also taken for comparison purposes. Images were successfully acquired and compared to x-ray kVp and proton EBT2/X-Omat film images. The spatial resolution of the CMOS detector image is subjectively comparable to the EBT2 and Kodak X-Omat V film images obtained at the same object-detector distance. X-rays have apparent higher spatial resolution than the CMOS. However, further studies with different commercial films using proton beam irradiation demonstrate that the distance of the detector to the object is important to the amount of proton scatter contributing to the proton image. Proton images obtained with films at different distances from the source indicate that proton scatter significantly affects the CMOS image quality. Proton radiographic images were successfully acquired at MGH using a CMOS active pixel sensor detector. The CMOS demonstrated spatial resolution subjectively comparable to films at the same object-detector distance. Further work will be done in order to establish the spatial and energy resolution of the CMOS detector for protons. The

77 FR 26787 - Certain CMOS Image Sensors and Products Containing Same; Notice of Receipt of Complaint...

Science.gov (United States)

2012-05-07

... INTERNATIONAL TRADE COMMISSION [Docket No. 2895] Certain CMOS Image Sensors and Products.... International Trade Commission has received a complaint entitled Certain CMOS Image Sensors and Products... importation, and the sale within the United States after importation of certain CMOS image sensors and...

Above-CMOS a-Si and CIGS Solar Cells for Powering Autonomous Microsystems

NARCIS (Netherlands)

Lu, J.; Liu, W.; van der Werf, C.H.M.; Kovalgin, A.Y.; Sun, Y.; Schropp, R.E.I.; Schmitz, J.

2010-01-01

Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium-gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal

CMOS Time-Resolved, Contact, and Multispectral Fluorescence Imaging for DNA Molecular Diagnostics

Directory of Open Access Journals (Sweden)

Nan Guo

2014-10-01

Full Text Available Instrumental limitations such as bulkiness and high cost prevent the fluorescence technique from becoming ubiquitous for point-of-care deoxyribonucleic acid (DNA detection and other in-field molecular diagnostics applications. The complimentary metal-oxide-semiconductor (CMOS technology, as benefited from process scaling, provides several advanced capabilities such as high integration density, high-resolution signal processing, and low power consumption, enabling sensitive, integrated, and low-cost fluorescence analytical platforms. In this paper, CMOS time-resolved, contact, and multispectral imaging are reviewed. Recently reported CMOS fluorescence analysis microsystem prototypes are surveyed to highlight the present state of the art.

Pengaruh Temperatur, Waktu, dan Aditif Dalam Pembuatan Zircon Micronized

Directory of Open Access Journals (Sweden)

Sajima

2017-05-01

Full Text Available Research on temperature, time and additives effects on milling process in micronized-zircon production has been conducted. The production of zircon micronized started from sorting process on mining products then followed by beneficiation, roasting, leaching, dryng and milling processes. The results showed that the optimum conditions of the roasting process was at the temperature of 425 °C, in 25 minutes and using 4% additives. In these conditions, micronized zircon (2 µm obtained as much as 92.10% in10 minutes milling time.

Implantable optogenetic device with CMOS IC technology for simultaneous optical measurement and stimulation

Science.gov (United States)

Haruta, Makito; Kamiyama, Naoya; Nakajima, Shun; Motoyama, Mayumi; Kawahara, Mamiko; Ohta, Yasumi; Yamasaki, Atsushi; Takehara, Hiroaki; Noda, Toshihiko; Sasagawa, Kiyotaka; Ishikawa, Yasuyuki; Tokuda, Takashi; Hashimoto, Hitoshi; Ohta, Jun

2017-05-01

In this study, we have developed an implantable optogenetic device that can measure and stimulate neurons by an optical method based on CMOS IC technology. The device consist of a blue LED array for optically patterned stimulation, a CMOS image sensor for acquiring brain surface image, and eight green LEDs surrounding the CMOS image sensor for illumination. The blue LED array is placed on the CMOS image sensor. We implanted the device in the brain of a genetically modified mouse and successfully demonstrated the stimulation of neurons optically and simultaneously acquire intrinsic optical images of the brain surface using the image sensor. The integrated device can be used for simultaneously measuring and controlling neuronal activities in a living animal, which is important for the artificial control of brain functions.

Development of CMOS pixel sensors for tracking and vertexing in high energy physics experiments

CERN Document Server

Senyukov, Serhiy; Besson, Auguste; Claus, Giles; Cousin, Loic; Dulinski, Wojciech; Goffe, Mathieu; Hippolyte, Boris; Maria, Robert; Molnar, Levente; Sanchez Castro, Xitzel; Winter, Marc

2014-01-01

CMOS pixel sensors (CPS) represent a novel technological approach to building charged particle detectors. CMOS processes allow to integrate a sensing volume and readout electronics in a single silicon die allowing to build sensors with a small pixel pitch ($\\sim 20 \\mu m$) and low material budget ($\\sim 0.2-0.3\\% X_0$) per layer. These characteristics make CPS an attractive option for vertexing and tracking systems of high energy physics experiments. Moreover, thanks to the mass production industrial CMOS processes used for the manufacturing of CPS the fabrication construction cost can be significantly reduced in comparison to more standard semiconductor technologies. However, the attainable performance level of the CPS in terms of radiation hardness and readout speed is mostly determined by the fabrication parameters of the CMOS processes available on the market rather than by the CPS intrinsic potential. The permanent evolution of commercial CMOS processes towards smaller feature sizes and high resistivity ...

A 205GHz Amplifier in 90nm CMOS Technology

Science.gov (United States)

2017-03-01

10.5dB power gain, Psat of -1.6dBm, and P1dB ≈ -5.8dBm in a standard 90nm CMOS process. Moreover, the design employs internal (layout-based) /external...other advantages, such as low- cost , reliability, and mixed-mode analog/digital chips, intensifying its usage in the mm-wave band [5]. CMOS has several... disadvantages at the higher frequency range with the worst case scenario happening when the device operates near its fmax. This is chiefly due to

An introduction to deep submicron CMOS for vertex applications

CERN Document Server

Campbell, M; Cantatore, E; Faccio, F; Heijne, Erik H M; Jarron, P; Santiard, Jean-Claude; Snoeys, W; Wyllie, K

2001-01-01

Microelectronics has become a key enabling technology in the development of tracking detectors for High Energy Physics. Deep submicron CMOS is likely to be extensively used in all future tracking systems. Radiation tolerance in the Mrad region has been achieved and complete readout chips comprising many millions of transistors now exist. The choice of technology is dictated by market forces but the adoption of deep submicron CMOS for tracking applications still poses some challenges. The techniques used are reviewed and some of the future challenges are discussed.

Linear CMOS RF power amplifiers a complete design workflow

CERN Document Server

Ruiz, Hector Solar

2013-01-01

The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor's geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides diffe

Development of a multitechnology FPGA: a reconfigurable architecture for photonic information processing

Science.gov (United States)

Mal, Prosenjit; Toshniwal, Kavita; Hawk, Chris; Bhadri, Prashant R.; Beyette, Fred R., Jr.

2004-06-01

Over the years, Field Programmable Gate Arrays (FPGAs) have made a profound impact on the electronics industry with rapidly improving semiconductor-manufacturing technology ranging from sub-micron to deep sub-micron processes and equally innovative CAD tools. Though FPGA has revolutionized programmable/reconfigurable digital logic technology, one limitation of current FPGA"s is that the user is limited to strictly electronic designs. Thus, they are not suitable for applications that are not purely electronic, such as optical communications, photonic information processing systems and other multi-technology applications (ex. analog devices, MEMS devices and microwave components). Over recent years, the growing trend has been towards the incorporation of non-traditional device technologies into traditional CMOS VLSI systems. The integration of these technologies requires a new kind of FPGA that can merge conventional FPGA technology with photonic and other multi-technology devices. The proposed new class of field programmable device will extend the flexibility, rapid prototyping and reusability benefits associated with conventional electronic into photonic and multi-technology domain and give rise to the development of a wider class of programmable and embedded integrated systems. This new technology will create a tremendous opportunity for applying the conventional programmable/reconfigurable hardware concepts in other disciplines like photonic information processing. To substantiate this novel architectural concept, we have fabricated proof-of-the-concept CMOS VLSI Multi-technology FPGA (MT-FPGA) chips that include both digital field programmable logic blocks and threshold programmable photoreceivers which are suitable for sensing optical signals. Results from these chips strongly support the feasibility of this new optoelectronic device concept.

Structural and Magnetothermal Properties of Compounds: Yb<sub>5sub>Si_xGe>4-xsub>,Sm>5sub>Si_xGe>4-xsub>, EuO, and Eu<sub>3sub>O>4sub>

Energy Technology Data Exchange (ETDEWEB)

Ahn, Kyunghan [Iowa State Univ., Ames, IA (United States)

2007-01-01

The family of R<sub>5sub>Si_xGe>4-xsub> alloys demonstrates a variety of unique physical phenomena related to magneto-structural transitions associated with reversible breaking and reforming of specific bonds that can be controlled by numerous external parameters such as chemical composition, magnetic field, temperature, and pressure. Therefore, R<sub>5sub>Si_xGe>4-xsub> systems have been extensively studied to uncover the mechanism of the extraordinary magneto-responsive properties including the giant magnetoresistance (GMR) and colossal magnetostriction, as well as giant magnetocaloric effect (GMCE). Until now, more than a half of possible R<sub>5sub>Si_xGe>4-xsub> pseudobinary systems have been completely or partially investigated with respect to their crystallography and phase relationships (R = La, Pr, Nd, Gd, Tb, Dy, Er, Lu, Y). Still, there are other R<sub>5sub>Si_xGe>4-xsub> systems (R = Ce, Sm, Ho, Tm, and Yb) that are not studied yet. Here, we report on phase relationships and structural, magnetic, and thermodynamic properties in the Yb<sub>5sub>Si_xGe>4-xsub>and Sm<sub>5sub>Si_xGe>4-xsub> pseudobinary systems, which may exhibit mixed valence states. The crystallography, phase relationships, and physical properties of Yb<sub>5sub>Si_xGe>4-xsub> alloys with 0 ≤ x ≤ 4 have been examined by using single crystal and powder x-ray diffraction at room temperature, and dc magnetization and heat capacity measurements between 1.8 K and 400 K in magnetic fields ranging from 0 to 7 T. Unlike the majority of R<sub>5sub>Si_xGe>4-xsub> systems studied to date, where R is the rare earth metal, all Yb-based germanide-silicides with the 5:4 stoichiometry crystallize in the same Gd<sub>5sub>Si>4sub>-type structure. The magnetic properties of Yb<sub>5sub>Si_xGe>4-xsub> materials are nearly composition

Sub-microanalysis of solid samples with near-field enhanced atomic emission spectroscopy

Science.gov (United States)

Wang, Xiaohua; Liang, Zhisen; Meng, Yifan; Wang, Tongtong; Hang, Wei; Huang, Benli

2018-03-01

A novel approach, which we have chosen to name it as near-field enhanced atomic emission spectroscopy (NFE-AES), was proposed by introducing a scanning tunnelling microscope (STM) system into a laser-induced breakdown spectrometry (LIBS). The near-field enhancement of a laser-illuminated tip was utilized to improve the lateral resolution tremendously. Using the hybrid arrangement, pure metal tablets were analyzed to verify the performance of NFE-AES both in atmosphere and in vacuum. Due to localized surface plasmon resonance (LSPR), the incident electromagnetic field is enhanced and confined at the apex of tip, resulting in sub-micron scale ablation and elemental emission signal. We discovered that the signal-to-noise ratio (SNR) and the spectral resolution obtained in vacuum condition are better than those acquired in atmospheric condition. The quantitative capability of NFE-AES was demonstrated by analyzing Al and Pb in Cu matrix, respectively. Submicron-sized ablation craters were achieved by performing NFE-AES on a Si wafer with an Al film, and the spectroscopic information from a crater of 650 nm diameter was successfully obtained. Due to its advantage of high lateral resolution, NFE-AES imaging of micro-patterned Al lines on an integrated circuit of a SIM card was demonstrated with a sub-micron lateral resolution. These results reveal the potential of the NFE-AES technique in sub-microanalysis of solids, opening an opportunity to map chemical composition at sub-micron scale.

1 mm3-sized optical neural stimulator based on CMOS integrated photovoltaic power receiver

Science.gov (United States)

Tokuda, Takashi; Ishizu, Takaaki; Nattakarn, Wuthibenjaphonchai; Haruta, Makito; Noda, Toshihiko; Sasagawa, Kiyotaka; Sawan, Mohamad; Ohta, Jun

2018-04-01

In this work, we present a simple complementary metal-oxide semiconductor (CMOS)-controlled photovoltaic power-transfer platform that is suitable for very small (less than or equal to 1-2 mm) electronic devices such as implantable health-care devices or distributed nodes for the Internet of Things. We designed a 1.25 mm × 1.25 mm CMOS power receiver chip that contains integrated photovoltaic cells. We characterized the CMOS-integrated power receiver and successfully demonstrated blue light-emitting diode (LED) operation powered by infrared light. Then, we integrated the CMOS chip and a few off-chip components into a 1-mm3 implantable optogenetic stimulator, and demonstrated the operation of the device.

Experimental characterization of a 10 μW 55 μm-pitch FPN-compensated CMOS digital pixel sensor for X-ray imagers

Energy Technology Data Exchange (ETDEWEB)

Figueras, Roger, E-mail: roger.figueras@imb-cnm.csic.es [Institut de Microelectrònica de Barcelona IMB-CNM(CSIC), Bellaterra (Spain); Martínez, Ricardo; Terés, Lluís [Institut de Microelectrònica de Barcelona IMB-CNM(CSIC), Bellaterra (Spain); Serra-Graells, Francisco [Institut de Microelectrònica de Barcelona IMB-CNM(CSIC), Bellaterra (Spain); Department of Microelectronics and Electronic Systems, Universitat Autònoma de Barcelona, Bellaterra (Spain)

2014-10-11

This paper presents experimental results obtained from both electrical and radiation tests of a new room-temperature digital pixel sensor (DPS) circuit specifically optimized for digital direct X-ray imaging. The 10 μW 55 μm-pitch CMOS active pixel circuit under test includes self-bias capability, built-in test, selectable e{sup −}/h{sup +} collection, 10-bit charge-integration A/D conversion, individual gain tuning for fixed pattern noise (FPN) cancellation, and digital-only I/O interface, which make it suitable for 2D modular chip assemblies in large and seamless sensing areas. Experimental results for this DPS architecture in 0.18 μm 1P6M CMOS technology are reported, returning good performance in terms of linearity, 2ke{sub rms}{sup −} of ENC, inter-pixel crosstalk below 0.5 LSB, 50 Mbps of I/O speed, and good radiation response for its use in digital X-ray imaging.

The Carnegie Hubble Program: The Leavitt Law at 3.6 microns and 4.5 microns in the Large Magellanic Cloud

Science.gov (United States)

Scowcroft, Victoria; Freedman, Wendy L.; Madore, Barry F.; Monson, Andrew J.; Persson, S. E.; Seibert, Mark; Rigby, Jane R.; Sturch, Laura

2011-01-01

The Carnegie Hubble Program (CHP) is designed to improve the extragalactic distance scale using data from the post-cryogenic era of Spitzer. The ultimate goal is a determination of the Hubble constant to an accuracy of 2%. This paper is the first in a series on the Cepheid population of the Large Magellanic Cloud, and focuses on the period-luminosity relations (Leavitt laws) that will be used, in conjunction with observations of Milky Way Cepheids, to set the slope and zero-point of the Cepheid distance scale in the mid-infrared. To this end, we have obtained uniformly-sampled light curves for 85 LMC Cepheids, having periods between 6 and 140 days. Period- luminosity and period-color relations are presented in the 3.6 micron and 4.5 micron bands. We demonstrate that the 3.6 micron band is a superb distance indicator. The cyclical variation of the [3.6]-[4.5] color has been measured for the first time. We attribute the amplitude and phase of the color curves to the dissociation and recombination of CO molecules in the Cepheid s atmosphere. The CO affects only the 4.5 micron flux making it a potential metallicity indicator.

Applications of Si/SiGe heterostructures to CMOS devices

International Nuclear Information System (INIS)

Sidek, R.M.

1999-03-01

For more than two decades, advances in MOSFETs used in CMOS VLSI applications have been made through scaling to ever smaller dimensions for higher packing density, faster circuit speed and lower power dissipation. As scaling now approaches nanometer regime, the challenge for further scaling becomes greater in terms of technology as well as device reliability. This work presents an alternative approach whereby non-selectively grown Si/SiGe heterostructure system is used to improve device performance or to relax the technological challenge. SiGe is considered to be of great potential because of its promising properties and its compatibility with Si, the present mainstream material in microelectronics. The advantages of introducing strained SiGe in CMOS technology are examined through two types of device structure. A novel structure has been fabricated in which strained SiGe is incorporated in the source/drain of P-MOSFETs. Several advantages of the Si/SiGe source/drain P-MOSFETs over Si devices are experimentally, demonstrated for the first time. These include reduction in off-state leakage and punchthrough susceptibility, degradation of parasitic bipolar transistor (PBT) action, suppression of CMOS latchup and suppression of PBT-induced breakdown. The improvements due to the Si/SiGe heterojunction are supported by numerical simulations. The second device structure makes use of Si/SiGe heterostructure as a buried channel to enhance the hole mobility of P-MOSFETs. The increase in the hole mobility will benefit the circuit speed and device packing density. Novel fabrication processes have been developed to integrate non-selective Si/SiGe MBE layers into self-aligned PMOS and CMOS processes based on Si substrate. Low temperature processes have been employed including the use of low-pressure chemical vapor deposition oxide and plasma anodic oxide. Low field mobilities, μ 0 are extracted from the transfer characteristics, Id-Vg of SiGe channel P-MOSFETs with various Ge

Effect of the cations distribution on the magnetic properties of SnFe{sub 2}O{sub 4}: First-principles study

Energy Technology Data Exchange (ETDEWEB)

Lamouri, R.; Tadout, M. [Materials and Nanomaterials Center, MAScIR Foundation, Rabat Design Center, Rue Mohamed Al Jazouli – Madinat Al Irfane, Rabat 10 100 (Morocco); LaMCScI (ex LMPHE), B.P. 1014, Faculty of Science-Mohammed V University, Rabat (Morocco); Hamedoun, M. [Materials and Nanomaterials Center, MAScIR Foundation, Rabat Design Center, Rue Mohamed Al Jazouli – Madinat Al Irfane, Rabat 10 100 (Morocco); Benyoussef, A. [Materials and Nanomaterials Center, MAScIR Foundation, Rabat Design Center, Rue Mohamed Al Jazouli – Madinat Al Irfane, Rabat 10 100 (Morocco); LaMCScI (ex LMPHE), B.P. 1014, Faculty of Science-Mohammed V University, Rabat (Morocco); Hassan II Academy of Science and Technology, Rabat (Morocco); Ez-zahraouy, H.; Benaissa, M. [LaMCScI (ex LMPHE), B.P. 1014, Faculty of Science-Mohammed V University, Rabat (Morocco); Mounkachi, O., E-mail: o.mounkachi@mascir.com [Materials and Nanomaterials Center, MAScIR Foundation, Rabat Design Center, Rue Mohamed Al Jazouli – Madinat Al Irfane, Rabat 10 100 (Morocco)

2017-08-15

Highlights: • SnFe{sub 2}O{sub 4} a new half-metal spinel oxides for spintronic application. • The most stable normal spinel structures are identified for SnFe{sub 2}O{sub 4}. • Spin-polarized calculations give a half-metallic character for SnFe{sub 2}O{sub 4}. - Abstract: In this work, a study of the electronic and magnetic properties of SnFe{sub 2}O{sub 4} spinel ferrite for different case of octahedral and tetrahedral distribution was carried out by using the Full Potential Linearized Plane Wave (FP-LAPW) method in density functional theory (DFT) implemented in the WIEN2K package, with the generalized gradient (GGA) and Tran-Blaha modified Becke-Johnson approximations for the exchange and correlation functional. Our spin-polarized calculations based on mBJ correction show a half metallic behavior for SnFe{sub 2}O{sub 4} which confirm the usefulness of SnFe{sub 2}O{sub 4} in spintronic application. From the magnetic properties calculations, it is found that the magnetic moment per formula unit is 8.0327 µ{sub β}, 0.000015 µ{sub β} and 3.99µ{sub β} in SnFe{sub 2}O{sub 4} 100% normal, 100% inverse and 50% inverse, respectively.

Research-grade CMOS image sensors for demanding space applications

Science.gov (United States)

Saint-Pé, Olivier; Tulet, Michel; Davancens, Robert; Larnaudie, Franck; Magnan, Pierre; Corbière, Franck; Martin-Gonthier, Philippe; Belliot, Pierre

2017-11-01

Imaging detectors are key elements for optical instruments and sensors on board space missions dedicated to Earth observation (high resolution imaging, atmosphere spectroscopy...), Solar System exploration (micro cameras, guidance for autonomous vehicle...) and Universe observation (space telescope focal planes, guiding sensors...). This market has been dominated by CCD technology for long. Since the mid- 90s, CMOS Image Sensors (CIS) have been competing with CCDs for more and more consumer domains (webcams, cell phones, digital cameras...). Featuring significant advantages over CCD sensors for space applications (lower power consumption, smaller system size, better radiations behaviour...), CMOS technology is also expanding in this field, justifying specific R&D and development programs funded by national and European space agencies (mainly CNES, DGA, and ESA). All along the 90s and thanks to their increasingly improving performances, CIS have started to be successfully used for more and more demanding applications, from vision and control functions requiring low-level performances to guidance applications requiring medium-level performances. Recent technology improvements have made possible the manufacturing of research-grade CIS that are able to compete with CCDs in the high-performances arena. After an introduction outlining the growing interest of optical instruments designers for CMOS image sensors, this talk will present the existing and foreseen ways to reach high-level electro-optics performances for CIS. The developments of CIS prototypes built using an imaging CMOS process and of devices based on improved designs will be presented.

Development of CMOS Imager Block for Capsule Endoscope

International Nuclear Information System (INIS)

Shafie, S; Fodzi, F A M; Tung, L Q; Lioe, D X; Halin, I A; Hasan, W Z W; Jaafar, H

2014-01-01

This paper presents the development of imager block to be associated in a capsule endoscopy system. Since the capsule endoscope is used to diagnose gastrointestinal diseases, the imager block must be in small size which is comfortable for the patients to swallow. In this project, a small size 1.5 V button battery is used as the power supply while the voltage supply requirements for other components such as microcontroller and CMOS image sensor are higher. Therefore, a voltage booster circuit is proposed to boost up the voltage supply from 1.5 V to 3.3 V. A low power microcontroller is used to generate control pulses for the CMOS image sensor and to convert the 8-bits parallel data output to serial data to be transmitted to the display panel. The results show that the voltage booster circuit was able to boost the voltage supply from 1.5 V to 3.3 V. The microcontroller precisely controls the CMOS image sensor to produce parallel data which is then serialized again by the microcontroller. The serial data is then successfully translated to 2fps image and displayed on computer.

Design of CMOS CFOA Based on Pseudo Operational Transconductance Amplifier

OpenAIRE

Hassan Jassim Motlak

2015-01-01

A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to...

Native and induced triplet nitrogen-vacancy centers in nano- and micro-diamonds: Half-field electron paramagnetic resonance fingerprint

International Nuclear Information System (INIS)

Shames, A. I.; Osipov, V. Yu.; Vul’, A. Ya.; Bardeleben, H.-J. von; Boudou, J.-P.; Treussart, F.

2014-01-01

Multiple frequency electron paramagnetic resonance (EPR) study of small (4–25 nm) nanodiamonds obtained by various dynamic synthesis techniques reveals systematic presence in the half-field (HF) region a distinctive doublet fingerprint consisting of resolved g HF1  = 4.26 and g HF2  = 4.00 signals. This feature is attributed to “forbidden” ΔM S  = 2 transitions in EPR spectra of two native paramagnetic centers of triplet (S = 1) origin designated as TR1 and TR2, characterized by zero field splitting values D 1  = 0.0950 ± 0.002 cm −1 and D 2  = 0.030 ± 0.005 cm −1 . Nanodiamonds of ∼50 nm particle size, obtained by crushing of Ib type nitrogen rich synthetic diamonds, show only HF TR2 signal whereas the same sample undergone high energy (20 MeV) electron irradiation and thermal annealing demonstrates rise of HF TR1 signal. The same HF TR1 signals appear in the process of fabrication of fluorescent nanodiamonds from micron-size synthetic diamond precursors. Results obtained allow unambiguous attribution of the half-field TR1 EPR signals with g HF1  = 4.26, observed in nano- and micron-diamond powders, to triplet negatively charged nitrogen-vacancy centers. These signals are proposed as reliable and convenient fingerprints in both qualitative and quantitative study of fluorescent nano- and micron-diamonds

Status of 2 micron laser technology program

Science.gov (United States)

Storm, Mark

1991-01-01

The status of 2 micron lasers for windshear detection is described in viewgraph form Theoretical atmospheric and instrument system studies have demonstrated that the 2.1 micron Ho:YAG lasers can effectively measure wind speeds in both wet and dry conditions with accuracies of 1 m/sec. Two micron laser technology looks very promising in the near future, but several technical questions remain. The Ho:YAG laser would be small, compact, and efficient, requiring little or no maintenance. Since the Ho:YAG laser is laser diode pumped and has no moving part, the lifetime of this laser would be directly related to the diode laser lifetimes which can perform in excess of 10,000 hours. Efficiencies of 3 to 12 percent are expected, but laser demonstrations confirming the ability to Q-switch this laser are required. Coherent laser operation has been demonstrated for both the CW and Q-switched lasers.

Structural and luminescence properties of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} chalcogenide semiconductor solid solutions

Energy Technology Data Exchange (ETDEWEB)

Tagiyev, B.G. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Tagiyev, O.B. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Baku Branch of M.V. Lomonosov Moscow State University, Baku AZ-1143 (Azerbaijan); Mammadov, A.I. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Quang, Vu Xuan [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam); Naghiyev, T.G., E-mail: tural@nagiyev.net [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Jabarov, S.H. [Institute of Physics of Azerbaijan National Academy of Sciences, 131 H.Javid ave., Baku Az-1143 (Azerbaijan); Bayerisches Geoinstitute, University Bayreuth, d-95440 Bayreuth (Germany); Leonenya, M.S.; Yablonskii, G.P. [Institute of Physics of National Academy Sciences of Belarus, 220072 Minsk (Belarus); Dang, N.T. [Institute of Research and Development, Duy Tan University, 550000 Da Nang (Viet Nam)

2015-12-01

The structural and luminescence properties of chalcogenide semiconductor Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions (x=0.1–0.9) doped with 7 at% of Eu{sup 2+} ions were studied at room temperature. It was found, that the crystal structure of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4} solid solutions varies with the amount of Ca{sup 2+} cations and phase transition from cubic to orthorhombic takes place with increase of x value. Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} solid solutions exhibit intense photoluminescence in cyan to yellow spectral region depending on x due to 5d→4f electron–dipole transitions in Eu{sup 2+} ions. The peak position of the emission band shifts from 506 nm for x=0.1 to 555 nm for x=0.9 and the full width at half maximum of the emission band varies from 62 nm to 72 nm depending on the symmetry of the crystal lattice. The PL excitation spectrum of Ca{sub x}Ba{sub 1−x}Ga{sub 2}S{sub 4}:Eu{sup 2+} covers the range at half maximum from 310 nm to 480 nm for x=0.1 and to 520 nm for x=0.9. It was shown that long-wavelength shift is caused by influence of the growing crystal field strength on Eu{sup 2+} ions.

CMOS-compatible photonic devices for single-photon generation

Directory of Open Access Journals (Sweden)

Xiong Chunle

2016-09-01

Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

Design rules for RCA self-aligned silicon-gate CMOS/SOS process

Science.gov (United States)

1977-01-01

The CMOS/SOS design rules prepared by the RCA Solid State Technology Center (SSTC) are described. These rules specify the spacing and width requirements for each of the six design levels, the seventh level being used to define openings in the passivation level. An associated report, entitled Silicon-Gate CMOS/SOS Processing, provides further insight into the usage of these rules.

CMOS technology: a critical enabler for free-form electronics-based killer applications

Science.gov (United States)

Hussain, Muhammad M.; Hussain, Aftab M.; Hanna, Amir

2016-05-01

Complementary metal oxide semiconductor (CMOS) technology offers batch manufacturability by ultra-large-scaleintegration (ULSI) of high performance electronics with a performance/cost advantage and profound reliability. However, as of today their focus has been on rigid and bulky thin film based materials. Their applications have been limited to computation, communication, display and vehicular electronics. With the upcoming surge of Internet of Everything, we have critical opportunity to expand the world of electronics by bridging between CMOS technology and free form electronics which can be used as wearable, implantable and embedded form. The asymmetry of shape and softness of surface (skins) in natural living objects including human, other species, plants make them incompatible with the presently available uniformly shaped and rigidly structured today's CMOS electronics. But if we can break this barrier then we can use the physically free form electronics for applications like plant monitoring for expansion of agricultural productivity and quality, we can find monitoring and treatment focused consumer healthcare electronics - and many more creative applications. In our view, the fundamental challenge is to engage the mass users to materialize their creative ideas. Present form of electronics are too complex to understand, to work with and to use. By deploying game changing additive manufacturing, low-cost raw materials, transfer printing along with CMOS technology, we can potentially stick high quality CMOS electronics on any existing objects and embed such electronics into any future objects that will be made. The end goal is to make them smart to augment the quality of our life. We use a particular example on implantable electronics (brain machine interface) and its integration strategy enabled by CMOS device design and technology run path.

CMOS pixel sensor development for the ATLAS experiment at the High Luminosity-LHC

Science.gov (United States)

Rimoldi, M.

2017-12-01

The current ATLAS Inner Detector will be replaced with a fully silicon based detector called Inner Tracker (ITk) before the start of the High Luminosity-LHC project (HL-LHC) in 2026. To cope with the harsh environment expected at the HL-LHC, new approaches are being developed for pixel detectors based on CMOS technology. Such detectors can provide charge collection, analog amplification and digital processing in the same silicon wafer. The radiation hardness is improved thanks to multiple nested wells which give the embedded CMOS electronics sufficient shielding. The goal of this programme is to demonstrate that depleted CMOS pixels are suitable for high rate, fast timing and high radiation operation at the LHC . A number of alternative solutions have been explored and characterised. In this document, test results of the sensors fabricated in different CMOS processes are reported.

Power-aware transceiver design for half-duplex bidirectional chip-to-chip optical interconnects

International Nuclear Information System (INIS)

Sangirov Jamshid; Ukaegbu Ikechi Augustine; Lee Tae-Woo; Park Hyo-Hoon; Sangirov Gulomjon

2013-01-01

A power-aware transceiver for half-duplex bidirectional chip-to-chip optical interconnects has been designed and fabricated in a 0.13 μm complementary metal–oxide–semiconductor (CMOS) technology. The transceiver can detect the presence and absence of received signals and saves 55% power in Rx enabled mode and 45% in Tx enabled mode. The chip occupies an area of 1.034 mm 2 and achieves a 3-dB bandwidth of 6 GHz and 7 GHz in Tx and Rx modes, respectively. The disabled outputs for the Tx and Rx modes are isolated with 180 dB and 139 dB, respectively, from the enabled outputs. Clear eye diagrams are obtained at 4.25 Gbps for both the Tx and Rx modes. (semiconductor integrated circuits)

Method for measuring energy-input inhomogeneities in electroionization CO/sub 2/-lasers

Energy Technology Data Exchange (ETDEWEB)

Borovkov, V V; Kornilov, V G; Sukhanov, L V; Chelpanov, V I

1987-08-01

A Michelson interferometer at a wavelength of 0.63 micron was used to measure optical inhomogeneities due to variations of the polarizability of the molecular components in CO/sub 2/-laser mixtures under vibrational excitation in a nonself-sustained electric discharge. It is suggested that the observed effect can be used for the noninertial and noncontact diagnostics of energy-input distribution over the cross section of the active medium of an electroionization CO/sub 2/-laser. Results are presented for N/sub 2/-He, CO/sub 2/-He, CO/sub 2/-N/sub 2/-He, and CO/sub 2/-He mixtures. 10 references.

Analysis of the resistive network in a bio-inspired CMOS vision chip

Science.gov (United States)

Kong, Jae-Sung; Sung, Dong-Kyu; Hyun, Hyo-Young; Shin, Jang-Kyoo

2007-12-01

CMOS vision chips for edge detection based on a resistive circuit have recently been developed. These chips help develop neuromorphic systems with a compact size, high speed of operation, and low power dissipation. The output of the vision chip depends dominantly upon the electrical characteristics of the resistive network which consists of a resistive circuit. In this paper, the body effect of the MOSFET for current distribution in a resistive circuit is discussed with a simple model. In order to evaluate the model, two 160×120 CMOS vision chips have been fabricated by using a standard CMOS technology. The experimental results have been nicely matched with our prediction.

CMOS VHF transconductance-C lowpass filter

NARCIS (Netherlands)

Nauta, Bram

1990-01-01

Experimental results of a VHF CMOS transconductance-C lowpass filter are described. The filter is built with transconductors as published earlier. The cutoff frequency can be tuned from 22 to 98 MHz and the measured filter response is very close to the ideal response

Determining the thermal expansion coefficient of thin films for a CMOS MEMS process using test cantilevers

International Nuclear Information System (INIS)

Cheng, Chao-Lin; Fang, Weileun; Tsai, Ming-Han

2015-01-01

Many standard CMOS processes, provided by existing foundries, are available. These standard CMOS processes, with stacking of various metal and dielectric layers, have been extensively applied in integrated circuits as well as micro-electromechanical systems (MEMS). It is of importance to determine the material properties of the metal and dielectric films to predict the performance and reliability of micro devices. This study employs an existing approach to determine the coefficients of thermal expansion (CTEs) of metal and dielectric films for standard CMOS processes. Test cantilevers with different stacking of metal and dielectric layers for standard CMOS processes have been designed and implemented. The CTEs of standard CMOS films can be determined from measurements of the out-of-plane thermal deformations of the test cantilevers. To demonstrate the feasibility of the present approach, thin films prepared by the Taiwan Semiconductor Manufacture Company 0.35 μm 2P4M CMOS process are characterized. Eight test cantilevers with different stacking of CMOS layers and an auxiliary Si cantilever on a SOI wafer are fabricated. The equivalent elastic moduli and CTEs of the CMOS thin films including the metal and dielectric layers are determined, respectively, from the resonant frequency and static thermal deformation of the test cantilevers. Moreover, thermal deformations of cantilevers with stacked layers different to those of the test beams have been employed to verify the measured CTEs and elastic moduli. (paper)

77 FR 74513 - Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations...

Science.gov (United States)

2012-12-14

... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-846] Certain CMOS Image Sensors and Products Containing Same; Investigations: Terminations, Modifications and Rulings AGENCY: U.S... United States after importation of certain CMOS image sensors and products containing the same based on...

Dependence of vortex phase transitions in mesoscopic Bi{sub 2}Sr{sub 2}CaCuO{sub 8} superconductor at tilted magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Dolz, M I; Pastoriza, H, E-mail: mdolz@cab.cnea.gov.a, E-mail: hernan@cab.cnea.gov.a [Centro Atomico Bariloche, Comision Nacional de Energa Atomica and CONICET, R8402AGP S. C. de Bariloche (Argentina)

2009-03-01

A micron sized single crystal of the superconductor Bi{sub 2}Sr{sub 2}CaCuO{sub 8} was studied using silicon mechanical micro-oscillators at various tilt angles of the dc magnetic field with respect to the c axis of the sample. Different phases of the vortex matter were detected by measuring changes in the value and sign of the oscillator resonant frequency variation with temperature. We could explain the change in the sign of this variation at high temperatures as the transition from the 2D liquid of decoupled pancakes to a reversible 3D vortex lattice. The data indicates that this transition only depends on the magnetic field perpendicular to the superconducting layers while the dissipation involved in this process depends on the component parallel to them.

Performance simulation and analysis of a CMOS/nano hybrid nanoprocessor system

International Nuclear Information System (INIS)

Cabe, Adam C; Das, Shamik

2009-01-01

This paper provides detailed simulation results and analysis of the prospective performance of hybrid CMOS/nanoelectronic processor systems based upon the field-programmable nanowire interconnect (FPNI) architecture. To evaluate this architecture, a complete design was developed for an FPNI implementation using 90 nm CMOS with 15 nm wide nanowire interconnects. Detailed simulations of this design illustrate that critical design choices and tradeoffs exist beyond those specified by the architecture. This includes the selection of the types of junction nanodevices, as well as the implementation of low-level circuits. In particular, the simulation results presented here show that only nanodevices with an 'on/off' current ratio of 200 or more are suitable to produce correct system-level behaviour. Furthermore, the design of the CMOS logic gates in the FPNI system must be customized to accommodate the resistances of both 'on'-state and 'off'-state nanodevices. Using these customized designs together with models of suitable nanodevices, additional simulations demonstrate that, relative to conventional 90 nm CMOS FPGA systems, performance gains can be obtained of up to 70% greater speed or up to a ninefold reduction in energy consumption.

Design considerations for a new, high resolution Micro-Angiographic Fluoroscope based on a CMOS sensor (MAF-CMOS).

Science.gov (United States)

Loughran, Brendan; Swetadri Vasan, S N; Singh, Vivek; Ionita, Ciprian N; Jain, Amit; Bednarek, Daniel R; Titus, Albert; Rudin, Stephen

2013-03-06

The detectors that are used for endovascular image-guided interventions (EIGI), particularly for neurovascular interventions, do not provide clinicians with adequate visualization to ensure the best possible treatment outcomes. Developing an improved x-ray imaging detector requires the determination of estimated clinical x-ray entrance exposures to the detector. The range of exposures to the detector in clinical studies was found for the three modes of operation: fluoroscopic mode, high frame-rate digital angiographic mode (HD fluoroscopic mode), and DSA mode. Using these estimated detector exposure ranges and available CMOS detector technical specifications, design requirements were developed to pursue a quantum limited, high resolution, dynamic x-ray detector based on a CMOS sensor with 50 μm pixel size. For the proposed MAF-CMOS, the estimated charge collected within the full exposure range was found to be within the estimated full well capacity of the pixels. Expected instrumentation noise for the proposed detector was estimated to be 50-1,300 electrons. Adding a gain stage such as a light image intensifier would minimize the effect of the estimated instrumentation noise on total image noise but may not be necessary to ensure quantum limited detector operation at low exposure levels. A recursive temporal filter may decrease the effective total noise by 2 to 3 times, allowing for the improved signal to noise ratios at the lowest estimated exposures despite consequent loss in temporal resolution. This work can serve as a guide for further development of dynamic x-ray imaging prototypes or improvements for existing dynamic x-ray imaging systems.

CMOS analog integrated circuits high-speed and power-efficient design

CERN Document Server

Ndjountche, Tertulien

2011-01-01

High-speed, power-efficient analog integrated circuits can be used as standalone devices or to interface modern digital signal processors and micro-controllers in various applications, including multimedia, communication, instrumentation, and control systems. New architectures and low device geometry of complementary metaloxidesemiconductor (CMOS) technologies have accelerated the movement toward system on a chip design, which merges analog circuits with digital, and radio-frequency components. CMOS: Analog Integrated Circuits: High-Speed and Power-Efficient Design describes the important tren

Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer

Energy Technology Data Exchange (ETDEWEB)

Senyukov, S., E-mail: serhiy.senyukov@cern.ch; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

2013-12-01

The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz0.18μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10{sup 13}n{sub eq}/cm{sup 2} was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz0.18μm CMOS process for the ALICE ITS upgrade.

Impact-disrupted gunshot residue: A sub-micron analysis using a novel collection protocol

Directory of Open Access Journals (Sweden)

V. Spathis

2017-06-01

Full Text Available The analysis of gunshot residue (GSR has played an integral role within the legal system in relation to shooting cases. With a characteristic elemental composition of lead, antimony, barium, and a typically discriminative spheroidal morphology, the presence and distribution of GSR can aid in firearm investigations. In this experiment, three shots of low velocity rim-fire ammunition were fired over polished silicon collection substrates placed at six intervals over a 100 cm range. The samples were analysed using a Field Emission Gun Scanning Electron Microscope (FEG-SEM in conjunction with an X-flash Energy Dispersive X-ray (EDX detector, allowing for GSR particle analyses of composition and structure at the sub-micron level. The results of this experiment indicate that although classic spheroidal particles are present consistently throughout the entire range of samples their sizes vary significantly, and at certain distances from the firearm particles with an irregular morphology were discerned, forming “impact-disrupted” GSR particles, henceforth colloquially referred to as “splats”. Upon further analysis, trends with regards to the formation of these splat particles were distinguished. An increase in splat frequency was observed starting at 10 cm from the firearm, with 147 mm−2 splat density, reaching a maximal flux at 40 cm (451 mm−2, followed by a gradual decrease to the maximum range sampled. Moreover, the structural morphology of the splats changes throughout the sampling range. At the distances closest to the firearm, molten-looking particles were formed, demonstrating the metallic residues were in a liquid state when their flight path was disrupted. However, at increased distances-primarily where the discharge plume was at maximum dispersion and moving away from the firearm, the residues have had time to cool in-fight resulting in semi-congealed and solid particles that subsequently disrupted upon impact, forming more

The integration of InGaP LEDs with CMOS on 200 mm silicon wafers

Science.gov (United States)

Wang, Bing; Lee, Kwang Hong; Wang, Cong; Wang, Yue; Made, Riko I.; Sasangka, Wardhana Aji; Nguyen, Viet Cuong; Lee, Kenneth Eng Kian; Tan, Chuan Seng; Yoon, Soon Fatt; Fitzgerald, Eugene A.; Michel, Jurgen

2017-02-01

The integration of photonics and electronics on a converged silicon CMOS platform is a long pursuit goal for both academe and industry. We have been developing technologies that can integrate III-V compound semiconductors and CMOS circuits on 200 mm silicon wafers. As an example we present our work on the integration of InGaP light-emitting diodes (LEDs) with CMOS. The InGaP LEDs were epitaxially grown on high-quality GaAs and Ge buffers on 200 mm (100) silicon wafers in a MOCVD reactor. Strain engineering was applied to control the wafer bow that is induced by the mismatch of coefficients of thermal expansion between III-V films and silicon substrate. Wafer bonding was used to transfer the foundry-made silicon CMOS wafers to the InGaP LED wafers. Process trenches were opened on the CMOS layer to expose the underneath III-V device layers for LED processing. We show the issues encountered in the 200 mm processing and the methods we have been developing to overcome the problems.

A back-illuminated megapixel CMOS image sensor

Science.gov (United States)

Pain, Bedabrata; Cunningham, Thomas; Nikzad, Shouleh; Hoenk, Michael; Jones, Todd; Wrigley, Chris; Hancock, Bruce

2005-01-01

In this paper, we present the test and characterization results for a back-illuminated megapixel CMOS imager. The imager pixel consists of a standard junction photodiode coupled to a three transistor-per-pixel switched source-follower readout [1]. The imager also consists of integrated timing and control and bias generation circuits, and provides analog output. The analog column-scan circuits were implemented in such a way that the imager could be configured to run in off-chip correlated double-sampling (CDS) mode. The imager was originally designed for normal front-illuminated operation, and was fabricated in a commercially available 0.5 pn triple-metal CMOS-imager compatible process. For backside illumination, the imager was thinned by etching away the substrate was etched away in a post-fabrication processing step.

A high sensitivity 20Mfps CMOS image sensor with readout speed of 1Tpixel/sec for visualization of ultra-high speed phenomena

Science.gov (United States)

Kuroda, R.; Sugawa, S.

2017-02-01

Ultra-high speed (UHS) CMOS image sensors with on-chop analog memories placed on the periphery of pixel array for the visualization of UHS phenomena are overviewed in this paper. The developed UHS CMOS image sensors consist of 400H×256V pixels and 128 memories/pixel, and the readout speed of 1Tpixel/sec is obtained, leading to 10 Mfps full resolution video capturing with consecutive 128 frames, and 20 Mfps half resolution video capturing with consecutive 256 frames. The first development model has been employed in the high speed video camera and put in practical use in 2012. By the development of dedicated process technologies, photosensitivity improvement and power consumption reduction were simultaneously achieved, and the performance improved version has been utilized in the commercialized high-speed video camera since 2015 that offers 10 Mfps with ISO16,000 photosensitivity. Due to the improved photosensitivity, clear images can be captured and analyzed even under low light condition, such as under a microscope as well as capturing of UHS light emission phenomena.

RF Circuit Design in Nanometer CMOS

NARCIS (Netherlands)

Nauta, Bram

2007-01-01

With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern

Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

Science.gov (United States)

Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

2005-04-01

We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

A Biologically Inspired CMOS Image Sensor

CERN Document Server

Sarkar, Mukul

2013-01-01

Biological systems are a source of inspiration in the development of small autonomous sensor nodes. The two major types of optical vision systems found in nature are the single aperture human eye and the compound eye of insects. The latter are among the most compact and smallest vision sensors. The eye is a compound of individual lenses with their own photoreceptor arrays.  The visual system of insects allows them to fly with a limited intelligence and brain processing power. A CMOS image sensor replicating the perception of vision in insects is discussed and designed in this book for industrial (machine vision) and medical applications. The CMOS metal layer is used to create an embedded micro-polarizer able to sense polarization information. This polarization information is shown to be useful in applications like real time material classification and autonomous agent navigation. Further the sensor is equipped with in pixel analog and digital memories which allow variation of the dynamic range and in-pixel b...

A Glucose Biosensor Using CMOS Potentiostat and Vertically Aligned Carbon Nanofibers.

Science.gov (United States)

Al Mamun, Khandaker A; Islam, Syed K; Hensley, Dale K; McFarlane, Nicole

2016-08-01

This paper reports a linear, low power, and compact CMOS based potentiostat for vertically aligned carbon nanofibers (VACNF) based amperometric glucose sensors. The CMOS based potentiostat consists of a single-ended potential control unit, a low noise common gate difference-differential pair transimpedance amplifier and a low power VCO. The potentiostat current measuring unit can detect electrochemical current ranging from 500 nA to 7 [Formula: see text] from the VACNF working electrodes with high degree of linearity. This current corresponds to a range of glucose, which depends on the fiber forest density. The potentiostat consumes 71.7 [Formula: see text] of power from a 1.8 V supply and occupies 0.017 [Formula: see text] of chip area realized in a 0.18 [Formula: see text] standard CMOS process.

CMOS compatible thin-film ALD tungsten nanoelectromechanical devices

Science.gov (United States)

Davidson, Bradley Darren

This research focuses on the development of a novel, low-temperature, CMOS compatible, atomic-layer-deposition (ALD) enabled NEMS fabrication process for the development of ALD Tungsten (WALD) NEMS devices. The devices are intended for use in CMOS/NEMS hybrid systems, and NEMS based micro-processors/controllers capable of reliable operation in harsh environments not accessible to standard CMOS technologies. The majority of NEMS switches/devices to date have been based on carbon-nano-tube (CNT) designs. The devices consume little power during actuation, and as expected, have demonstrated actuation voltages much smaller than MEMS switches. Unfortunately, NEMS CNT switches are not typically CMOS integrable due to the high temperatures required for their growth, and their fabrication typically results in extremely low and unpredictable yields. Thin-film NEMS devices offer great advantages over reported CNT devices for several reasons, including: higher fabrication yields, low-temperature (CMOS compatible) deposition techniques like ALD, and increased control over design parameters/device performance metrics, i.e., device geometry. Furthermore, top-down, thin-film, nano-fabrication techniques are better capable of producing complicated device geometries than CNT based processes, enabling the design and development of multi-terminal switches well-suited for low-power hybrid NEMS/CMOS systems as well as electromechanical transistors and logic devices for use in temperature/radiation hard computing architectures. In this work several novel, low-temperature, CMOS compatible fabrication technologies, employing WALD as a structural layer for MEMS or NEMS devices, were developed. The technologies developed are top-down nano-scale fabrication processes based on traditional micro-machining techniques commonly used in the fabrication of MEMS devices. Using these processes a variety of novel WALD NEMS devices have been successfully fabricated and characterized. Using two different