Formation of large clusters during sputtering of silver

International Nuclear Information System (INIS)

Staudt, C.; Heinrich, R.; Wucher, A.

2000-01-01

We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, X.L.; Coetsee, E. [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063, Guangdong (China); Swart, H.C., E-mail: swartHC@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Terblans, J.J., E-mail: terblansjj@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa)

2017-07-31

Highlights: • Linear Least Square (LLS) method used to separate Ni and Cu Auger spectra. • The depth-dependent ion sputtering induced roughness was quantitatively evaluated. • The depth resolution better when profiling with dual-ion beam vs. a single-ion beam. • AES depth profiling with a lower ion energy results in a better depth resolution. - Abstract: The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO{sub 2} substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar{sup +} ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Hollow cathode discharges with gas flow: numerical modelling for the effect on the sputtered atoms and the deposition flux

International Nuclear Information System (INIS)

Bogaerts, Annemie; Okhrimovskyy, Andriy; Baguer, Neyda; Gijbels, Renaat

2005-01-01

A model is developed for a cylindrical hollow cathode discharge (HCD), with an axial gas flow (entering through a hole in the cathode bottom). The model combines a commercial computational fluid dynamics program 'FLUENT' to compute the gas flow, with home-developed Monte Carlo and fluid models for the plasma behaviour. In this paper, we focus on the behaviour of the sputtered atoms, and we investigate how the gas flow affects the sputtered atom density profiles and the fluxes, which is important for sputter deposition. The sputtered atom density profiles are not much affected by the gas flow. The flux, on the other hand, is found to be significantly enhanced by the gas flow, but in the present set-up it is far from uniform in the radial direction at the open end of the HCD, where a substrate for deposition could be located

Nitrogen Atom Energy Distributions in a Hollow-cathode Planar Sputtering Magnetron

International Nuclear Information System (INIS)

Ruzic, D.N.; Goeckner, M.J.; Cohen, S.A.; Wang, Zhehui

1999-01-01

Energy distributions of N atoms in a hollow-cathode planar sputtering magnetron were obtained by use of optical emission spectroscopy. A characteristic line, N I 8216.3 , well-separated from molecular nitrogen emission bands, was identified. Jansson's nonlinear spectral deconvolution method, refined by minimization of χ w ampersand sup2; , was used to obtain the optimal deconvolved spectra. These showed nitrogen atom energies from 1 eV to beyond 500 eV. Based on comparisons with VFTRIM results, we propose that the energetic N atoms are generated from N 2 + ions after these ions are accelerated through the sheath and dissociatively reflect from the cathode

Semi-empirical formulas for sputtering yield

International Nuclear Information System (INIS)

Yamamura, Yasumichi

1994-01-01

When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

Sputtering and reflection of self-bombardment of tungsten material

International Nuclear Information System (INIS)

Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

2015-01-01

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

Sputtering and reflection of self-bombardment of tungsten material

Energy Technology Data Exchange (ETDEWEB)

Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

2015-04-15

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

Simulation experiments and solar wind sputtering

International Nuclear Information System (INIS)

Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

1978-01-01

In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

Hot oxygen atoms: Their generation and chemistry. [Production by sputtering; reaction with butenes

Energy Technology Data Exchange (ETDEWEB)

Ferrieri, R.A.; Chu, Yung Y.; Wolf, A.P.

1987-01-01

Oxygen atoms with energies between 1 and 10 eV have been produced through ion beam sputtering from metal oxide targets. Argon ion beams were used on Ta/sub 2/O/sub 5/ and V/sub 2/O/sub 5/. Results show that some control may be exerted over the atom's kinetic energy by changing the target. Reactions of the hot O(/sup 3/P) with cis- and trans-butenes were investigated. (DLC)

Study of atomic excitations in sputtering with the use of composite targets

International Nuclear Information System (INIS)

Kierkegaard, K.; Ludvigsen, S.; Petterson, B.; Veje, E.

1985-01-01

Some Li- and Na-compounds have been bombarded with 80 keV Ar + ions, and excitation of sputtered particles has been studied with optical spectrometry. Very strong excitation of Li I and Na I was observed, but essentially no excitation of electronegative elements. For levels in Li I and also in Na I with n 8, the relative level populations fall noticeably above the extrapolation of such power law behaviors. This is discussed and tentatively interpreted in terms of two-step processes. (i) The projectile excites a target electron from the valence band to the conduction band. (ii) Such an excitation is transferred resonantly to the sputtered atom on its way out. (orig.)

The statistics of sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1993-01-01

The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

Opto-galvanic effect on degenerate magnetic states of sputtered atoms in a glow discharge

International Nuclear Information System (INIS)

Zhechev, D; Steflekova, V

2014-01-01

The opto-galvanic response of some degenerate states of sputtered atoms to linearly- and circularly polarize light is studied. On the same optical transition both time-resolved- and amplitude opto-galvanic signals are found depending on the polarizations of light absorbed. The latter induces galvanic responses differing in opto-galvanic efficiency, time-evolution and sensitivity to discharge current and laser power. The differences are ascribed to the rate constants of the decay processes, characterizing aligned and oriented atoms

Sputtering of copper atoms by keV atomic and molecular ions A comparison of experiment with analytical and computer based models

CERN Document Server

Gillen, D R; Goelich,

2002-01-01

Non-resonant multiphoton ionisation combined with quadrupole and time-of-flight analysis has been used to measure energy distributions of sputtered copper atoms. The sputtering of a polycrystalline copper target by 3.6 keV Ar sup + , N sup + and CF sub 2 sup + and 1.8 keV N sup + and CF sub 2 sup + ion bombardment at 45 deg. has been investigated. The linear collision model in the isotropic limit fails to describe the high energy tail of the energy distributions. However the TRIM.SP computer simulation has been shown to provide a good description. The results indicate that an accurate description of sputtering by low energy, molecular ions requires the use of computer simulation rather than analytical approaches. This is particularly important when considering plasma-surface interactions in plasma etching and deposition systems.

Sputtering of water ice

International Nuclear Information System (INIS)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

Investigation of energy thresholds of atomic and cluster sputtering of some elements under ion bombardment

CERN Document Server

Atabaev, B G; Lifanova, L F

2002-01-01

Threshold energies of sputtering of negative cluster ions from the Si(111) surface were measured at bombardment by Cs sup + , Rb sup + , and Na sup + ions with energy of 0.1-3.0 keV. These results are compared with the calculations of the similar thresholds by Bohdansky etc. formulas (3) for clusters Si sub n sup - and Cu sub n sup - with n=(1-5) and also for B, C, Al, Si, Fe, Cu atoms. Threshold energies of sputtering for the above elements were also estimated using the data from (5). Satisfactory agreement between the experimental and theoretical results was obtained. (author)

Accurate argon cluster-ion sputter yields: Measured yields and effect of the sputter threshold in practical depth-profiling by x-ray photoelectron spectroscopy and secondary ion mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

Cumpson, Peter J.; Portoles, Jose F.; Barlow, Anders J.; Sano, Naoko [National EPSRC XPS User' s Service (NEXUS), School of Mechanical and Systems Engineering, Newcastle University, Newcastle upon Tyne, NE1 7RU (United Kingdom)

2013-09-28

Argon Gas Cluster-Ion Beam sources are likely to become widely used on x-ray photoelectron spectroscopy and secondary ion mass spectrometry instruments in the next few years. At typical energies used for sputter depth profiling the average argon atom in the cluster has a kinetic energy comparable with the sputter threshold, meaning that for the first time in practical surface analysis a quantitative model of sputter yields near threshold is needed. We develop a simple equation based on a very simple model. Though greatly simplified it is likely to have realistic limiting behaviour and can be made useful for estimating sputter yields by fitting its three parameters to experimental data. We measure argon cluster-ion sputter yield using a quartz crystal microbalance close to the sputter threshold, for silicon dioxide, poly(methyl methacrylate), and polystyrene and (along with data for gold from the existing literature) perform least-squares fits of our new sputter yield equation to this data. The equation performs well, with smaller residuals than for earlier empirical models, but more importantly it is very easy to use in the design and quantification of sputter depth-profiling experiments.

Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

Directory of Open Access Journals (Sweden)

Bogdanov R.V.

2015-03-01

Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

High-power sputtering employed for film deposition

International Nuclear Information System (INIS)

Shapovalov, V I

2017-01-01

The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

Sputtering mechanisms of polycrystalline platinum by low energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

1999-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 1.5-9 keV He + bombardment at the normal ion incidence are presented. It has been found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of the bombarding ion species and ion energy. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for He and Ar bombardments were performed. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

Chemical sputtering of graphite by H+ ions

International Nuclear Information System (INIS)

Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

1976-01-01

In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

Measurement of partial coefficients of sputtering of titanium atoms from TiC and TiN coatings

International Nuclear Information System (INIS)

Vychegzhanin, G.A.; Gribanov, Yu.A.; Dikij, N.P.; Zhmurin, P.N.; Letuchij, A.N.; Matyash, P.P.; Sidokur, P.I.; Shono, D.A.

1989-01-01

Method of laser fluorescent spectroscopy was used to measure partial coefficients of sputtering of titanium atoms from TiC and TiN coatings under irradiation by 1 keV hydrogen ions. Irradiation was conducted in a plant with reflective discharge. Investigation of damaged layer in irradiated samples was conducted. The presence of near-the-surface layer enrichment with titanium atoms was revealed both in TiC and TiN samples. 12 refs.; 4 figs

Determining the sputter yields of molybdenum in low-index crystal planes via electron backscattered diffraction, focused ion beam and atomic force microscope

Energy Technology Data Exchange (ETDEWEB)

Huang, H.S., E-mail: 160184@mail.csc.com.tw [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chiu, C.H.; Hong, I.T.; Tung, H.C. [New Materials Research and Development Department, China Steel Corporation, 1 Chung Kang Road, Hsiao Kang, Kaohsiung 812, Taiwan, ROC (China); Chien, F.S.-S. [Department of Physics, Tunghai University, 1727, Sec. 4, Xitun Dist., Taiwan Boulevard, Taichung 407, Taiwan, ROC (China)

2013-09-15

Previous literature has used several monocrystalline sputtering targets with various crystalline planes, respectively, to investigate the variations of the sputter yield of materials in different crystalline orientations. This study presents a method to measure the sputtered yields of Mo for the three low-index planes (100), (110), and (111), through using an easily made polycrystalline target. The procedure was firstly to use electron backscattered diffraction to identify the grain positions of the three crystalline planes, and then use a focused ion beam to perform the micro-milling of each identified grain, and finally the sputter yields were calculated from the removed volumes, which were measured by atomic force microscope. Experimental results showed that the sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}, coincidental with the ranking of their planar atomic packing densities. The concept of transparency of ion in the crystalline substance was applied to elucidate these results. In addition, the result of (110) orientation exhibiting higher sputter yield is helpful for us to develop a Mo target with a higher deposition rate for use in industry. By changing the deformation process from straight rolling to cross rolling, the (110) texture intensity of the Mo target was significantly improved, and thus enhanced the deposition rate. - Highlights: • We used EBSD, FIB and AFM to measure the sputter yields of Mo in low-index planes. • The sputter yield of the primary orientations for Mo varied as Y{sub (110)} > Y{sub (100)} > Y{sub (111)}. • The transparency of ion was used to elucidate the differences in the sputter yield. • We improved the sputter rate of polycrystalline Mo target by adjusting its texture.

Matted-fiber divertor tagets for sputter resistance

International Nuclear Information System (INIS)

Gierszewski, P.J.; Todreas, N.E.; Mikic, B.; Yang, T.F.

1981-06-01

Reductions in net sputtering yields can be obtained by altering the surface topography to maximize redeposition of sputtered atoms. A simple analysis is used to indicate a potential reduction by a factor of 2 to 5 for matted fiber divertor targets, relatively independent of incident, reflected and sputtered atom distributions. The fiber temperature is also shown to be acceptable, even up to 10 MW/m 2 , for reasonably combinations of materials, fiber diameter and fiber spacing

MD simulation of cluster formation during sputtering

International Nuclear Information System (INIS)

Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

2001-01-01

The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

International Nuclear Information System (INIS)

Zhang, Lili; Xu, Xue; Wu, Yuejin

2013-01-01

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

An influence of ion and sputtered atom flows inhomogeneity on time evolution of the target surface relief in glow discharge

International Nuclear Information System (INIS)

Bondarenko, G G; Kristya, V I

2008-01-01

A mathematical model of ion and sputtered atom transport in the vicinity of the target with a periodical surface relief in glow discharge in pure gas is developed. Under the assumption that the relief amplitude is small, analytical expressions for their flows are found by the perturbation method and an equation describing the relief amplitude time evolution is derived. It is shown that intensity of sputtering exceeds intensity of sputtered material re-deposition at the relief tops, and relief smoothing always takes place in the process of homogeneous target treatment in glow discharge in pure gas

Ion-induced sputtering

International Nuclear Information System (INIS)

Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

1983-01-01

The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

Energy distributions of atoms sputtered from alkali halides by 540 eV electrons, Ch.1

International Nuclear Information System (INIS)

Overeijnder, H.; Szymonski, M.; Haring, A.; Vries, A.E. de

1978-01-01

The emission of halogen and alkali atoms, occurring under bombardment of alkali halides with electrons has been investigated. The electron energy was 540 eV and the temperature of the target was varied between room temperature and 400 0 C. The energy distribution of the emitted neutral particles was measured with a time of flight method. It was found that either diffusing interstitial halogen atoms or moving holes dominate the sputtering process above 200 0 C. Below 150 0 C alkali halides with lattice parameters s/d >= 0.33 show emission of non-thermal halogen atoms. s is the interionic space between two halogen ions in a direction and d is the diameter of a halogen atom. In general the energy distribution of the alkali and halogen atoms is thermal above 200 0 C, but not Maxwellian. (Auth.)

Optical emission studies of atomic and ionic species in the ionized sputter-deposition process of magnesium oxide thin films

International Nuclear Information System (INIS)

Matsuda, Y.; Koyama, Y.; Iwaya, M.; Shinohara, M.; Fujiyama, H.

2005-01-01

Planar magnetron (PM) power and ICP-RF power dependences of the optical emission intensities of excited atomic and ionic species in the reactive ionized sputter-deposition of magnesium oxide (MgO) thin films were investigated. With the increase in PM power at constant ICP-RF power, Mg I emission intensity increased and Ar I emission intensity gradually decreased. With the increase in ICP-RF power at constant PM power, the Mg I emission intensity increased at lower ICP-RF power and then gradually decreased at higher ICP-RF power; on the contrary, Ar I emission intensity monotonically increased. Emission intensity of atomic oxygen was negligibly small compared with those of Mg I and Ar I under the metallic sputtering mode condition

Fluence-dependent sputtering yield of micro-architectured materials

Energy Technology Data Exchange (ETDEWEB)

Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

2017-06-15

Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

Distribution of Fe atom density in a dc magnetron sputtering plasma source measured by laser-induced fluorescence imaging spectroscopy

Science.gov (United States)

Shibagaki, K.; Nafarizal, N.; Sasaki, K.; Toyoda, H.; Iwata, S.; Kato, T.; Tsunashima, S.; Sugai, H.

2003-10-01

Magnetron sputtering discharge is widely used as an efficient method for thin film fabrication. In order to achieve the optimized fabrication, understanding of the kinetics in plasmas is essential. In the present work, we measured the density distribution of sputtered Fe atoms using laser-induced fluorescence imaging spectroscopy. A dc magnetron plasma source with a Fe target was used. An area of 20 × 2 mm in front of the target was irradiated by a tunable laser beam having a planar shape. The picture of laser-induced fluorescence on the laser beam was taken using an ICCD camera. In this way, we obtained the two-dimensional image of the Fe atom density. As a result, it has been found that the Fe atom density observed at a distance of several centimeters from the target is higher than that adjacent to the target, when the Ar gas pressure was relatively high. It is suggested from this result that some gas-phase production processes of Fe atoms are available in the plasma. This work has been performed under the 21st Century COE Program by the Ministry of Education, Culture, Sports, Science and Technology in Japan.

Electronic sputtering

International Nuclear Information System (INIS)

Johnson, R.E.

1989-01-01

Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

Sputtering properties of tungsten 'fuzzy' surfaces

International Nuclear Information System (INIS)

Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

2011-01-01

Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

Carbonaceous Particles Production in a Sputtering Discharge

International Nuclear Information System (INIS)

Dominique, Claire; Sant, Marco; Arnas, Cecile

2005-01-01

Spherical dust particles have been produced in argon glow discharge by sputtering of a graphite cathode. Their size varies from 40 to 200 nm depending on the distance between the two electrodes and the largest ones have a cauliflower shape. Simulations giving the evolution of the energy distribution of sputtered carbon atoms suggest a mechanism of growth by carbon vapour condensation. The chemical composition and structure of particles have been investigated by infrared spectroscopy and appear to be a complex arrangement of the carbon atoms and hetero-atoms

Sputtering of copper (110) by 3 keV argon - a computer simulation

International Nuclear Information System (INIS)

Weygandt, A.; King, B.V.

1998-01-01

The aims of this study are to investigate the angular distribution of atoms sputtered from {110} surface of a copper monocrystal due to normal incidence 3 keV Argon impact as well as to examine the change of sputtering behaviour with temperature from 0 K to 670 K. We have used the Molecular Dynamics (MD) code SPUT93 to study sputtering. In MD codes Newton's equations of motion are solved simultanously for all atoms of a crystal. The forces acting on a particle are found from derivatives of a model potential function. For the present study an embedded atom method (EAM) potential was used. It was found that the total sputter yield for the warm crystal (670K) of 3.13 ± 0.03 is in agreement with experimental results and indicate that the temperature of the target has generally no direct influence on the sputtering yield. It was estimated that heating the crystal only causes more uniform emission. It was also found that ejection due to the collisions between atoms in the top layers along closed-packed directions become important. The mechanisms which determine the angular distributions of atoms sputtered from a copper crystal were identified

Geometric considerations in magnetron sputtering

International Nuclear Information System (INIS)

Thornton, J.A.

1982-01-01

The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

Molecular dynamics simulation of chemical sputtering of hydrogen atom on layer structured graphite

International Nuclear Information System (INIS)

Ito, A.; Wang, Y.; Irle, S.; Morokuma, K.; Nakamura, H.

2008-10-01

Chemical sputtering of hydrogen atom on graphite was simulated using molecular dynamics. Especially, the layer structure of the graphite was maintained by interlayer intermolecular interaction. Three kinds of graphite surfaces, flat (0 0 0 1) surface, armchair (1 1 2-bar 0) surface and zigzag (1 0 1-bar 0) surface, are dealt with as targets of hydrogen atom bombardment. In the case of the flat surface, graphene layers were peeled off one by one and yielded molecules had chain structures. On the other hand, C 2 H 2 and H 2 are dominant yielded molecules on the armchair and zigzag surfaces, respectively. In addition, the interaction of a single hydrogen isotope on a single graphene is investigated. Adsorption, reflection and penetration rates are obtained as functions of incident energy and explain hydrogen retention on layered graphite. (author)

Investigation of ion sputtering for eutectic Cu-37 at% Ag alloys

International Nuclear Information System (INIS)

Wang Zhenxia; Pan Jisheng; Zhang Jiping; Tao Zhenlan; Zhu Fuying; Zhao Lie; Zhang Huiming

1994-01-01

Angular distributions of sputtered atoms and the phenomenon of element locally rich relative to micro-topographic feature (ELR-MTF) of sputtered target surface have been investigated for Cu-37 at% Ag alloys by means of RBS, SEM and EPMA measurements. In the paper,emphasis will be put on the correlation between surface topography caused by Ar + ion bombardment with different doses and angular distribution of sputtered atoms ejecting from various micro-zones at topographical surface during sputtering. The experiment result was explained with the so-called ELR-MTF model which can qualitatively interpret the shape of the angular distributions and the variation of the preferential sputtering curves

Surface effects on sputtered atoms and their angular and energy dependence

International Nuclear Information System (INIS)

Hassanein, A.M.

1985-04-01

A comprehensive three-dimensional Monte Carlo computer code, Ion Transport in Materials and Compounds (ITMC), has been developed to study in detail the surfaces related phenomena that affect the amount of sputtered atoms and back-scattered ions and their angular and energy dependence. A number of important factors that can significantly affect the sputtering behavior of a surface can be studied in detail, such as having different surface properties and composition than the bulk and synergistic effects due to surface segregation of alloys. These factors can be important in determining and lifetime of fusion reactor first walls and limiters. The ITMC Code is based on Monte Carlo methods to track down the path and the damage produced by charged particles as they slow down in solid metal surfaces or compounds. The major advantages of the ITMC code are its flexibility and ability to use and compare all existing models for energy losses, all known interatomic potentials, and to use different materials and compounds with different surface and bulk composition to allow for dynamic surface composition to allow for dynamic surface composition changes. There is good agreement between the code and available experimental results without using adjusting parameters for the energy losses mechanisms. The ITMC Code is highly optimized, very fast to run and easy to use

Formation and stability of sputtered clusters

International Nuclear Information System (INIS)

Andersen, H.H.

1989-01-01

Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

HAADF-STEM atom counting in atom probe tomography specimens: Towards quantitative correlative microscopy.

Science.gov (United States)

Lefebvre, W; Hernandez-Maldonado, D; Moyon, F; Cuvilly, F; Vaudolon, C; Shinde, D; Vurpillot, F

2015-12-01

The geometry of atom probe tomography tips strongly differs from standard scanning transmission electron microscopy foils. Whereas the later are rather flat and thin (atom probe tomography specimens. Based on simulations (electron probe propagation and image simulations), the possibility to apply quantitative high angle annular dark field scanning transmission electron microscopy to of atom probe tomography specimens has been tested. The influence of electron probe convergence and the benefice of deconvolution of electron probe point spread function electron have been established. Atom counting in atom probe tomography specimens is for the first time reported in this present work. It is demonstrated that, based on single projections of high angle annular dark field imaging, significant quantitative information can be used as additional input for refining the data obtained by correlative analysis of the specimen in APT, therefore opening new perspectives in the field of atomic scale tomography. Copyright © 2015 Elsevier B.V. All rights reserved.

Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

International Nuclear Information System (INIS)

Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

2003-01-01

Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

Angular distributions of particles sputtered from polycrystalline platinum by low-energy ions

International Nuclear Information System (INIS)

Chernysh, V.S.; Eckstein, W.; Haidarov, A.A.; Kulikauskas, V.S.; Mashkova, E.S.; Molchanov, V.A.

2000-01-01

The results of an experimental study and a computer simulation with the TRIM.SP code of the angular distributions of atoms sputtered from polycrystalline platinum under 3-9 keV Ne + bombardment at normal ion incidence are presented. It was found that angular distributions of sputtered atoms are overcosine and that their shape is practically independent of an ion energy. Comparison with the previously obtained data for He + and Ar + ions have shown that the shape of the angular distribution does not depend on the bombarding ion species. Good agreement between experimental results and computer simulation data was found. Computer simulations of the partial angular distributions of Pt atoms ejected due to various sputtering mechanisms for Ne ion bombardment were performed and the comparison with corresponding data for He and Ar bombarding was made. The role of different mechanisms in the formation of angular distributions of sputtered atoms has been analyzed

Effect of sputtering on self-damaged ITER-grade tungsten

Energy Technology Data Exchange (ETDEWEB)

Voitsenya, V.S., E-mail: voitseny@ipp.kharkov.ua [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Bardamid, A.F. [Taras Shevchenko National University, 01033 Kiev (Ukraine); Belyaeva, A.I. [National Technical University “Kharkov Polytechnical Institute”, 61002 Kharkov (Ukraine); Bondarenko, V.N.; Skoryk, O.O.; Shtan’, A.F.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “Kharkov Institute of Physics and Technology”, 61108 Kharkov (Ukraine); Sterligov, V.A. [Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kiev (Ukraine); Tyburska-Püschel, B. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany)

2014-10-15

Simulation of neutron irradiation and sputtering on ITER-grade tungsten was studied. The effects of neutron-induced displacement damage have been simulated by irradiation of tungsten target with W{sup 6+} ions of 20 MeV energy. Bombardment by Ar{sup +} ions with energy 600 eV was used as imitation of impact of charge exchange atoms in ITER. The sputtering process was interrupted to perform in between measurements of the optical properties of the eroded surface and the mass loss. After sputtering was finished, the surface was thoroughly investigated by different methods for characterizing the surface relief developed due to sputtering. The damaging to, at least, the level that would be achieved in ITER does not lead to a decisive additional contribution to the processes under impact of charge exchange atoms only.

Chemical environment of iron atoms in iron oxynitride films synthesized by reactive magnetron sputtering

International Nuclear Information System (INIS)

Grafoute, M.; Petitjean, C.; Rousselot, C.; Pierson, J.F.; Greneche, J.M.

2007-01-01

An iron oxynitride film was deposited on silicon and glass substrates by magnetron sputtering in an Ar-N 2 -O 2 reactive mixture. Rutherford back-scattering spectrometry was used to determine the film composition (Fe 1.06 O 0.35 N 0.65 ). X-ray diffraction revealed the formation of a face-centred cubic (fcc) structure with a lattice parameter close to that of γ'''-FeN. X-ray photoelectron spectroscopy showed the occurrence of Fe-N and Fe-O bonds in the film. The local environment of iron atoms studied by 57 Fe Moessbauer spectrometry at both 300 and 77 K gives clear evidence that the Fe 1.06 O 0.35 N 0.65 is not a mixture of iron oxide and iron nitride phases. Despite a small amount of an iron nitride phase, the main sample consists of an iron oxynitride phase with an NaCl-type structure where oxygen atoms partially substitute for nitrogen atoms, thus indicating the formation of a iron oxynitride with an fcc structure

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

International Nuclear Information System (INIS)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

The angular distributions of sputtered indium atoms at different temperature

International Nuclear Information System (INIS)

Zhang Jiping; Wang Zhenxia; Tao Zhenlan; Pan Jisheng

1993-01-01

The effect of temperature and surface topography on the angular distribution of indium atoms was studied under bombardment by 2T KeV Ar + ions at normal incidence. Experiments were carried out on two samples, A and B, at 25 o C and 70 o C respectively. The function Y(θ) = a cosθ + b cos n θ, where θ is the sputtering angle, was found to fit the experimental data. The term (a cos θ) corresponds to the cosine distribution predicted by random collision cascade theory, and the term (b cos n θ) is dependent on factors such as the surface topography. For sample A, a∼b, whereas for sample B a< b. The surface of A consisted of flat and pebble like regions of almost equal area while the surface of B was more cratered. An explanation of the fitting values of a,b and n is given in terms of the shielding effects of the different structures. (UK)

Effects of pre-sputtered Al interlayer on the atomic layer deposition of Al{sub 2}O{sub 3} films on Mg–10Li–0.5Zn alloy

Energy Technology Data Exchange (ETDEWEB)

Wang, P.C.; Cheng, T.C. [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, H.C., E-mail: hclinntu@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Chen, M.J., E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China); Lin, K.M. [Department of Materials Science and Engineering, Feng Chia University, Taichung, Taiwan (China); Yeh, M.T. [Amli Materials Technology Co. Ltd., New Taipei, Taiwan (China)

2013-04-01

In this study, a dual-layer of Al/Al{sub 2}O{sub 3} films was deposited on the Mg–10Li–0.5Zn substrate using both techniques of magnetron sputtering and atomic layer deposition (ALD). The pre-sputtered Al interlayer has a crystalline structure and the ALD-Al{sub 2}O{sub 3} film is amorphous. The Al interlayer could effectively obstruct the diffusion out of Li atoms from the Mg–10Li–0.5Zn substrate during the deposition of ALD-Al{sub 2}O{sub 3} film. The Mg–10Li–0.5Zn specimen with a dual-layer of Al/Al{sub 2}O{sub 3} films exhibits a much better corrosion resistance than those specimens with a single layer of sputtered Al or ALD-Al{sub 2}O{sub 3}.

Depth resolution and preferential sputtering in depth profiling of sharp interfaces

International Nuclear Information System (INIS)

Hofmann, S.; Han, Y.S.; Wang, J.Y.

2017-01-01

Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

Depth resolution and preferential sputtering in depth profiling of sharp interfaces

Energy Technology Data Exchange (ETDEWEB)

Hofmann, S. [Max Planck Institute for Intelligent Systems (formerly MPI for Metals Research), Heisenbergstrasse 3, D-70569 Stuttgart (Germany); Han, Y.S. [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063 Guangdong (China)

2017-07-15

Highlights: • Interfacial depth resolution from MRI model depends on sputtering rate differences. • Depth resolution critically depends on the dominance of roughness or atomic mixing. • True (depth scale) and apparent (time scale) depth resolutions are different. • Average sputtering rate approximately yields true from apparent depth resolution. • Profiles by SIMS and XPS are different but similar to surface concentrations. - Abstract: The influence of preferential sputtering on depth resolution of sputter depth profiles is studied for different sputtering rates of the two components at an A/B interface. Surface concentration and intensity depth profiles on both the sputtering time scale (as measured) and the depth scale are obtained by calculations with an extended Mixing-Roughness-Information depth (MRI)-model. The results show a clear difference for the two extreme cases (a) preponderant roughness and (b) preponderant atomic mixing. In case (a), the interface width on the time scale (Δt(16–84%)) increases with preferential sputtering if the faster sputtering component is on top of the slower sputtering component, but the true resolution on the depth scale (Δz(16–84%)) stays constant. In case (b), the interface width on the time scale stays constant but the true resolution on the depth scale varies with preferential sputtering. For similar order of magnitude of the atomic mixing and the roughness parameters, a transition state between the two extremes is obtained. While the normalized intensity profile of SIMS represents that of the surface concentration, an additional broadening effect is encountered in XPS or AES by the influence of the mean electron escape depth which may even cause an additional matrix effect at the interface.

Physics of ion sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1984-04-01

The ejection of atoms by the ion bombardment of solids is discussed in terms of linear collision cascade theory. A simple argument describes the energies of the ejecta, but elaborate models are required to obtain accurate sputtering yields and related quantities. These include transport theoretical models based on linearized Boltzmann equations, computer simulation models based on the binary collision approximation, and classical many-body dynamical models. The role of each kind of model is discussed. Several aspects of sputtering are illustrated by results from the simulation code MARLOWE. 20 references, 6 figures

Determination of the number density of excited and ground Zn atoms during rf magnetron sputtering of ZnO target

Energy Technology Data Exchange (ETDEWEB)

Maaloul, L.; Gangwar, R. K.; Stafford, L., E-mail: luc.stafford@umontreal.ca [Département de Physique, Université de Montréal, Montréal, Québec H3C 3J7 (Canada)

2015-07-15

A combination of optical absorption spectroscopy (OAS) and optical emission spectroscopy measurements was used to monitor the number density of Zn atoms in excited 4s4p ({sup 3}P{sub 2} and {sup 3}P{sub 0}) metastable states as well as in ground 4s{sup 2} ({sup 1}S{sub 0}) state in a 5 mTorr Ar radio-frequency (RF) magnetron sputtering plasma used for the deposition of ZnO-based thin films. OAS measurements revealed an increase by about one order of magnitude of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms by varying the self-bias voltage on the ZnO target from −115 to −300 V. Over the whole range of experimental conditions investigated, the triplet-to-singlet metastable density ratio was 5 ± 1, which matches the statistical weight ratio of these states in Boltzmann equilibrium. Construction of a Boltzmann plot using all Zn I emission lines in the 200–500 nm revealed a constant excitation temperature of 0.33 ± 0.04 eV. In combination with measured populations of Zn {sup 3}P{sub 2} and {sup 3}P{sub 0} metastable atoms, this temperature was used to extrapolate the absolute number density of ground state Zn atoms. The results were found to be in excellent agreement with those obtained previously by actinometry on Zn atoms using Ar as the actinometer gas [L. Maaloul and L. Stafford, J. Vac. Sci. Technol., A 31, 061306 (2013)]. This set of data was then correlated to spectroscopic ellipsometry measurements of the deposition rate of Zn atoms on a Si substrate positioned at 12 cm away from the ZnO target. The deposition rate scaled linearly with the number density of Zn atoms. In sharp contrast with previous studies on RF magnetron sputtering of Cu targets, these findings indicate that metastable atoms play a negligible role on the plasma deposition dynamics of Zn-based coatings.

Sputtering in a glow discharge ion source - pressure dependence: theory and experiment

International Nuclear Information System (INIS)

Mason, R.S.; Pichilingi, Melanie

1994-01-01

A simplified theoretical expression has been developed for a glow discharge to show how the average cathode erosion rate (expressed as the number of atoms per ion of the total bombarding flux) varies with primary sputter yield, pressure, 'diffusion length' and sputtered atom 'stopping' cross section. An inverse pressure dependence is predicted which correlates well with experiment in the 2 and He, tend to converge. It is suggested that this could be due to a change in the mechanism to self-sputtering. Under constant conditions, the erosion rates of different cathode materials still correlate quite well with the differences in their primary sputter yields. (author)

Study of atomic excitations in sputtering with targets partially covered with oxygen

International Nuclear Information System (INIS)

Weng, J.; Veje, E.

1984-01-01

We have bombarded pure, elemental targets of Be, B, Mg, Al, Si, Ti, and Au with 80 keV Ar + ions and studied excitation of sputtered atoms or ions under UHV conditions as well as with oxygen present at the target surface. The measurements on Mg, Al, Si, and Ti have been done at projectile incidence angles from 0 0 to 85 0 . Excitation probabilities for gold were found to be only very little influenced by oxygen, but for Be, B, Mg, Al, Si, and Ti, the excitation probabilities were in many, but not all, cases found to depend strongly on the oxygen pressure as well as on the beam current density. This indicates that the excitation mechanism is strongly dependent on the initial electronic conditions of the solid. (orig.)

Quantitative characterization of silicon- and aluminium oxynitride films produced by reactive dc-magnetron sputtering

International Nuclear Information System (INIS)

Dreer, S.

2000-05-01

The deposition of aluminum and silicon oxynitride films by reactive dc-magnetron sputtering was systematically planned by design of experiments, carried out and evaluated with the application of specialized statistics software. The influence of the deposition parameters on the resulting films was evaluated by multiple regression analysis. With the obtained data a model of the deposition process for the quantitative prediction of the deposition parameters necessary to obtain films with desired composition was built. This is also of technological importance, since the physical properties of the films strongly depend on their composition. Furthermore, the long term repeatability of the deposition process was implemented into the model. A precise and economic way for quantitative bulk analysis of silicon/aluminum, oxygen and nitrogen based on EPMA was presented and the use of data gained by the latter method is discussed for the calculation of relative sensitivity factors for SIMS and hf-SNMS. Advantages and disadvantages of SIMS, hf-SNMS, hf-GD-OES, and sputter AES were compared. The combination FT-IR/EPMA/SIMS at present offers the best possibility for a quantitative bulk and in depth distribution analysis of such films in the range of 20 to 1000 nm thickness. The films were also characterized by XRD and PAA. The refractive index and the growth rate of the films were determined by spectroscopic ellipsometry. With indentation by a nano hardness tester the hardness and the Young's modulus of the films were obtained. The results of these measurements were evaluated by statistical software. The dependencies of the physical properties on the deposition parameters and on the film thickness were evaluated and quantified. Furthermore, the dependencies of the physical properties on the film composition represented by the oxygen content were evaluated. (author)

Electronic excitation of Ti atoms sputtered by energetic Ar+ and He+ from clean and monolayer oxygen covered surfaces

International Nuclear Information System (INIS)

Pellin, M.J.; Gruen, D.M.; Young, C.E.; Wiggins, M.D.; Argonne National Lab., IL

1983-01-01

Electronic excitation of Ti atoms ejected during energetic ion bombardment (Ar + , He + ) of well characterized clean and oxygen covered polycrystalline Ti metal surfaces has been determined. For states with 0 to 2 eV and 3 to 5.5 eV of electronic energy, static mode laser fluorescence spectroscopy (LFS) and static mode spontaneous fluorescence spectroscopy (SFS) were used respectively. These experiments which were carried out in a UHV ( -10 Torr) system equipped with an Auger spectrometer provide measurements of the correlation between oxygen coverage (0 to 3 monolayers) and the excited state distribution of sputtered Ti atoms. The experimentally determined electronic partition function of Ti atoms does not show an exponential dependence on energy (E) above the ground state but rather an E -2 or E -3 power law dependence. (orig.)

Physical sputtering of metallic systems by charged-particle impact

International Nuclear Information System (INIS)

Lam, N.Q.

1989-12-01

The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

Study on low-energy sputtering near the threshold energy by molecular dynamics simulations

Directory of Open Access Journals (Sweden)

C. Yan

2012-09-01

Full Text Available Using molecular dynamics simulation, we have studied the low-energy sputtering at the energies near the sputtering threshold. Different projectile-target combinations of noble metal atoms (Cu, Ag, Au, Ni, Pd, and Pt are simulated in the range of incident energy from 0.1 to 200 eV. It is found that the threshold energies for sputtering are different for the cases of M1 < M2 and M1 ≥ M2, where M1 and M2 are atomic mass of projectile and target atoms, respectively. The sputtering yields are found to have a linear dependence on the reduced incident energy, but the dependence behaviors are different for the both cases. The two new formulas are suggested to describe the energy dependences of the both cases by fitting the simulation results with the determined threshold energies. With the study on the energy dependences of sticking probabilities and traces of the projectiles and recoils, we propose two different mechanisms to describe the sputtering behavior of low-energy atoms near the threshold energy for the cases of M1 < M2 and M1 ≥ M2, respectively.

Theory of thermal sputtering

International Nuclear Information System (INIS)

Kelly, R.

1977-01-01

An energetic ion which is incident on a solid target causes a momentary temperature increase in the impact region, i.e., a so-called thermal spike occurs. Such spikes are capable of causing (or supplementing) disordering, precipitation, crystallization, electronic excitation, stoichiometry change, desorption, and sputtering, it being the contribution to sputtering that is considered here. The approach used is compatible with modern damage-distribution theory. Thus the temperature profile left by the incident ion is taken as a three-dimensional Gaussian with parameters appropriate to power-law scattering, and is used as the initial condition for solving the heat-conduction equation. Let us write this solution as T = T(t, y), where t is time and y is a dimension parallel to the target surface. The vaporization flux from a solid surface is taken as pnsup(1/2)(2π 2 >kT)sup(-1/2), where p, the equilibrium pressure of a vapor species containing n atoms, can be written as p 0 exp(-L/T), p 0 and L are constants largely independent of temperature, and 2 > is the mean mass per atom of target. An equation for the thermal sputtering coefficient is given: after integration the final result takes the form: Ssub(thermal)=pnsup(1/2)[2π 2 >k(Tsub(infinity)+cΔT 0 )]sup(-1/2)πlambda 2 tsub(eff.)atoms/ion, where Tsub(infinity) is the macroscopic target temperature, cΔT 0 is the maximum temperature increase at x = y = 0, p is to be evaluated at T = Tsub(infinity) + cΔT 0 , lambda is the mean atomic spacing of the target, and tsub(eff.) is a quantity with units of time. (author)

Optimum Pt and Ru atomic composition of carbon-supported Pt-Ru alloy electrocatalyst for methanol oxidation studied by the polygonal barrel-sputtering method

International Nuclear Information System (INIS)

Hiromi, Chikako; Inoue, Mitsuhiro; Taguchi, Akira; Abe, Takayuki

2011-01-01

Highlights: → The sputtered Pt and Ru form the Pt-Ru alloy nanoparticles on the carbon support. → The deposited Pt-Ru alloy particles have uniform Pt:Ru atomic ratios. → The optimum Pt:Ru ratio of the Pt-Ru/C for methanol oxidation is 58:42 at.% at 25 deg. C. → The optimum Pt:Ru ratio of 58:42 shifts to 50:50 at.% at 40 and 60 deg. C. → The polygonal barrel-sputtering method is useful to prepare the DMFC anode catalyst. - Abstract: The optimum Pt and Ru atomic composition of a carbon-supported Pt-Ru alloy (Pt-Ru/C) used in a practical direct methanol fuel cell (DMFC) anode was investigated. The samples were prepared by the polygonal barrel-sputtering method. Based on the physical properties of the prepared Pt-Ru/C samples, the Pt-Ru alloy was found to be deposited on a carbon support. The microscopic characterization showed that the deposited alloy forms nanoparticles, of which the atomic ratios of Pt and Ru (Pt:Ru ratios) are uniform and are in accordance with the overall Pt:Ru ratios of the samples. The formation of the Pt-Ru alloy is also supported by the electrochemical characterization. Based on these results, methanol oxidation on the Pt-Ru/C samples was measured by cyclic voltammetry and chronoamperometry. The results indicated that the methanol oxidation activities of the prepared samples depended on the Pt:Ru ratios, of which the optimum Pt:Ru ratio is 58:42 at.% at 25 deg. C and 50:50 at.% at 40 and 60 deg. C. This temperature dependence of the optimum Pt:Ru ratio is well explained by the relationship between the methanol oxidation reaction process and the temperature, which is reflected in the rate-determining steps considered from the activation energies. It should be noted that at 25-60 deg. C, the Pt-Ru/C with Pt:Ru = 50:50 at.% prepared by our sputtering method has the higher methanol oxidation activity than that of a commercially available sample with the identical overall Pt:Ru ratio. Consequently, the polygonal barrel-sputtering method

Low-dose effects in the sputtering of evaporated films

Energy Technology Data Exchange (ETDEWEB)

Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J. (Comision Nacional de Energia Atomica, San Carlos de Bariloche (Argentina). Centro Atomico Bariloche)

1983-05-01

We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile.

Synergetic effects during sputter-assisted depth profiling: growth-dominated topography development on InP and a model of the atomic mechanism

International Nuclear Information System (INIS)

Gries, W.H.; Miethe, K.

1987-01-01

Growth-dominated extreme topography development on ion-bombarded wafers of InP is reported and is explained in terms of the micro region model presented in summary form. This model postulates the existence of an ion-bombardment-produced ensemble of crystallites and non-crystalline aggregations of atoms (composed of the substrate material, of dopant and of oxygen from the native oxide layer) where the majority of InP micro regions is so small (nanometer dimensions) that most interstitials created in collision events between bombarding ions and atoms of the micro region can reach an interfacial boundary rather than recombine with a vacancy from the same or another collision event. These atoms are then transported via interfacial boundaries and over the surface to screw dislocations where crystal stubs proceed to grow until the damage rate by ion bombardment overtakes the growth rate. Ion-bombardment-induced compressive stresses favour diffusion towards the surface. Temperature transients within micro regions assist both interfacial diffusion and damage repair. The topography is a result of competition between growth and sputtering. Different growth rates cause different topographies. The development of an extreme topography can be suppressed by oxygen flooding of the sputtered surface, by simultaneous electron beam scanning, as well as by Cs + ion bombardment. (Author)

Low-dose effects in the sputtering of evaporated films

International Nuclear Information System (INIS)

Florio, A.R.O.; Alonso, E.V.; Baragiola, R.A.; Ferron, J.

1983-01-01

We report measurements of the dose dependence of the sputtering of evaporated films by 30 keV ions under UHV. An initial (sub-monolayer) enhanced sputtering is attributed to the removal of weakly bound atoms; this enhancement does not depend on the incidence angle of the projectile. (author)

Effects of ion sputtering on semiconductor surfaces

International Nuclear Information System (INIS)

McGuire, G.E.

1978-01-01

Ion beam sputtering has been combined with Auger spectroscopy to study the effects of ion beams on semiconductor surfaces. Observations on the mass dependence of ion selective sputtering of two component systems are presented. The effects of ion implantation are explained in terms of atomic dilution. Experimental data are presented that illustrate the super-position of selective sputtering and implantation effects on the surface composition. Sample reduction from electron and ion beam interaction is illustrated. Apparent sample changes which one might observe from the effects of residual gas contamination and electric fields are also discussed. (Auth.)

Calculated sputtering and atomic displacement cross-sections for applications to medium voltage analytical electron microscopy

International Nuclear Information System (INIS)

Bradley, C.R.; Zaluzec, N.J.

1987-08-01

The development of medium voltage electron microscopes having high brightness electron sources and ultra-high vacuum environments has been anticipated by the microscopy community now for several years. The advantages of such a configuration have been discussed to great lengths, while the potential disadvantages have for the most part been neglected. The most detrimental of these relative to microcharacterization are the effects of electron sputtering and atomic displacement to the local specimen composition. These effects have in the past been considered mainly in the high voltage electron microscope regime and generally were ignored in lower voltage instruments. Recent experimental measurements have shown that the effects of electron sputtering as well as radiation induced segregation can be observed in conventional transmission electron microscopes. It is, therefore, important to determine at what point the effects will begin to manifest themselves in the new generation of medium voltage analytical electron microscopes. In this manuscript we present new calculations which allow the individual experimentalist to determine the potential threshold levels for a particular elemental system and thus avoid the dangers of introducing artifacts during microanalysis. 12 refs., 3 figs

Measurements of beryllium sputtering yields at JET

Science.gov (United States)

Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

2011-08-01

The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

Collision cascades and sputtering induced by larger cluster ions

International Nuclear Information System (INIS)

Sigmund, P.

1988-01-01

Recent experimental work on larger cluster impact on solid surfaces suggests large deviations from the standard case of additive sputter yields both in the nuclear and electronic stopping regime. The paper concentrates on elastic collision cascades. In addition to very pronounced spike effects, two phenomena are pointed out that are specific to cluster bombardment. Multiple hits of cluster atoms on one and the same target atom may result in recoil atoms that move faster than the maximum recoil speed for monomer bombardment at the same projectile speed. This effect is important when the atomic mass of a beam atom is less than that of a target atom, M 1 2 . In the opposite case, M 1 >> M 2 , collisions between beam particles may accelerate some beam particles and slow down others. Some consequences are mentioned. Remarks on the nuclear stopping power of larger clusters and on electronic sputtering by cluster bombardment conclude the paper. 38 refs., 2 figs

Round Robin computer simulation of ejection probability in sputtering

International Nuclear Information System (INIS)

Sigmund, P.; Hautala, M.; Yamamura, Y.; Hosaka, S.; Ishitani, T.; Shulga, V.I.; Harrison, D.E. Jr.; Chakarov, I.R.; Karpuzov, D.S.; Kawatoh, E.; Shimizu, R.; Valkealahti, S.; Nieminen, R.M.; Betz, G.; Husinsky, W.; Shapiro, M.H.; Vicanek, M.; Urbassek, H.M.

1989-01-01

We have studied the ejection of a copper atom through a planar copper surface as a function of recoil velocity and depth of origin. Results were obtained from six molecular dynamics codes, four binary collision lattice simulation codes, and eight Monte Carlo codes. Most results were found with a Born-Mayer interaction potential between the atoms with Gibson 2 parameters and a planar surface barrier, but variations on this standard were allowed for, as well as differences in the adopted cutoff radius for the interaction potential, electronic stopping, and target temperature. Large differences were found between the predictions of the various codes, but the cause of these differences could be determined in most cases. A fairly clear picture emerges from all three types of codes for the depth range and the angular range for ejection at energies relevant to sputter ejection, although a quantitative discussion would have to include an analysis of replacement collision events which has been left out here. (orig.)

An extended formula for the energy spectrum of sputtered atoms from a material irradiated by light ions

International Nuclear Information System (INIS)

Ono, T.; Aoki, Y.; Yamamura, Y.; Kawamura, T.; Kenmotsu, T.

2004-10-01

We extend a formula proposed by Kenmotsu et al. (hereafter Paper I), which fits with the energy spectrum of atoms sputtered from a heavy material hit by low-energy light ions (H + , D + , T + , He + ) by taking into account an inelastic energy loss neglected in Paper I. We assume that primary knock-on atoms produced by ions backscattered at large angles do not lose energy while penetrating the material up to the surface, instead of the energy-loss model used in Paper I. The extended formula is expressed in terms of a normalized energy-distribution function and is compared with the data calculated with the ACAT code for 50 eV, 100 eV and 1 keV D + ions impinging on a Fe target. Our formula fits well with the data in a wide range of incident energy. (author)

Classical dynamics simulation of the fluence dependence of sputtering properties for the 2 keV Cu → Cu(1 0 0) system

International Nuclear Information System (INIS)

Karolewski, M.A.

2004-01-01

Classical dynamics simulations of sputtering have been carried out for 2 keV Cu projectiles incident on a Cu(1 0 0) crystallite target, in order to study the effects of projectile fluence on sputtering properties. Five projectiles are delivered into a 400 Ang 2 region of a Cu crystallite target at 5 ps intervals, giving a maximum fluence of 1.25 x 10 14 cm -2 in the primary impact zone. The altitudinal angle (φ) of the projectiles was 30 deg. (measured with respect to the surface), and the azimuthal (phi) direction of incidence was parallel to the surface atomic rows. The sputter yield is found not to depend sensitively on fluence. Over the fluence range investigated, the predicted standard deviation of the sputter yield is only 5% of the mean value of 11.7. Resputtered projectiles contribute less than 2% of the total sputter yield. With increasing fluence, the angular distribution of sputtered atoms tends to become less anisotropic. For example, the intensity modulations in the azimuthal angular distribution are reduced. This effect is due to the increasing contribution from atoms that are sputtered from defective structural environments. However, sputtered atom energy distributions and emission statistics show little dependence on fluence. The information depth of sputtered atoms increases rapidly with fluence, from 0.11 monolayers (ML) initially, to 1.2 ML after sputtering 0.25 ML from the primary impact zone

Formation of carbon nanotubes in the graphite surface by Ar ion sputtering

International Nuclear Information System (INIS)

Wang Zhenxia; Zhu Fuying; Wang Wenmin; Yu Guoqing; Ruan Meiling; Zhang Huiming; Zhu Jingping

1998-01-01

The authors have investigated structures and topography features of sputtered graphite surface using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), and demonstrated that carbon nanotubes can be grown up by sputtered-atom deposition on a protrusion of topography feature

Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

Energy Technology Data Exchange (ETDEWEB)

Saiz, Fernan [Department of Chemistry, Imperial College of Science, Technology and Medicine, South Kensington, London, SW7 2A7 (United Kingdom); Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu [Department of Mechanical and Aerospace Engineering, University of California, Irvine, California, 92697 (United States)

2016-06-15

The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

Molecular dynamics of nanodroplet impact: The effect of the projectile’s molecular mass on sputtering

International Nuclear Information System (INIS)

Saiz, Fernan; Gamero-Castaño, Manuel

2016-01-01

The impact of electrosprayed nanodroplets on ceramics at several km/s alters the atomic order of the target, causing sputtering, surface amorphization and cratering. The molecular mass of the projectile is known to have a strong effect on the impact phenomenology, and this article aims to rationalize this dependency using molecular dynamics. To achieve this goal, the article models the impact of four projectiles with molecular masses between 45 and 391 amu, and identical diameters and kinetic energies, 10 nm and 63 keV, striking a silicon target. In agreement with experiments, the simulations show that the number of sputtered atoms strongly increases with molecular mass. This is due to the increasing intensity of collision cascades with molecular mass: when the fixed kinetic energy of the projectile is distributed among fewer, more massive molecules, their collisions with the target produce knock-on atoms with higher energies, which in turn generate more energetic and larger numbers of secondary and tertiary knock-on atoms. The more energetic collision cascades intensify both knock-on sputtering and, upon thermalization, thermal sputtering. Besides enhancing sputtering, heavier molecules also increase the fraction of the projectile’s energy that is transferred to the target, as well as the fraction of this energy that is dissipated.

Fluctuations in atomic collision cascades - variance and correlations in sputtering and defect distributions

International Nuclear Information System (INIS)

Chakarova, R.; Pazsit, I.

1997-01-01

Fluctuation phenomena are investigated in various collision processes, i.e. ion bombardment induced sputtering and defect creation. The mean and variance of the sputter yield and the vacancies and interstitials are calculated as functions of the ion energy and the ion-target mass ratio. It is found that the relative variance of the defects in half-spaces and the relative variance of the sputter yield are not monotonous functions of the mass ratio. Two-point correlation functions in the depth variable, as well as sputtered energy, are also calculated. These functions help interpreting the behaviour of the relative variances of the integrated quantities, as well as understanding the cascade dynamics. All calculations are based on Lindhard power-law cross sections and use a binary collision Monte Carlo algorithm. 30 refs, 25 figs

Fluctuations in atomic collision cascades - variance and correlations in sputtering and defect distributions

Energy Technology Data Exchange (ETDEWEB)

Chakarova, R.; Pazsit, I.

1997-01-01

Fluctuation phenomena are investigated in various collision processes, i.e. ion bombardment induced sputtering and defect creation. The mean and variance of the sputter yield and the vacancies and interstitials are calculated as functions of the ion energy and the ion-target mass ratio. It is found that the relative variance of the defects in half-spaces and the relative variance of the sputter yield are not monotonous functions of the mass ratio. Two-point correlation functions in the depth variable, as well as sputtered energy, are also calculated. These functions help interpreting the behaviour of the relative variances of the integrated quantities, as well as understanding the cascade dynamics. All calculations are based on Lindhard power-law cross sections and use a binary collision Monte Carlo algorithm. 30 refs, 25 figs.

Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

International Nuclear Information System (INIS)

Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

2008-01-01

Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

Quantitative measurements of shear displacement using atomic force microscopy

International Nuclear Information System (INIS)

Wang, Wenbo; Wu, Weida; Sun, Ying; Zhao, Yonggang

2016-01-01

We report a method to quantitatively measure local shear deformation with high sensitivity using atomic force microscopy. The key point is to simultaneously detect both torsional and buckling motions of atomic force microscopy (AFM) cantilevers induced by the lateral piezoelectric response of the sample. This requires the quantitative calibration of torsional and buckling response of AFM. This method is validated by measuring the angular dependence of the in-plane piezoelectric response of a piece of piezoelectric α-quartz. The accurate determination of the amplitude and orientation of the in-plane piezoelectric response, without rotation, would greatly enhance the efficiency of lateral piezoelectric force microscopy.

Non-stoichiometry of MoS2 phase prepared by sputtering

International Nuclear Information System (INIS)

Ito, T.; Nakajima, K.

1978-01-01

The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

Depth profile investigation of the incorporated iron atoms during Kr{sup +} ion beam sputtering on Si (001)

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, B., E-mail: khanbabaee@physik.uni-siegen.de [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Arezki, B.; Biermanns, A. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany); Cornejo, M.; Hirsch, D. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Lützenkirchen-Hecht, D. [Abteilung Physik, Bergische Universität Wuppertal, D-42097 Wuppertal (Germany); Frost, F. [Leibniz-Institut für Oberflächenmodifizierung e. V. (IOM), Permoserstraße 15, D-04318 Leipzig (Germany); Pietsch, U. [Solid State Physics, University of Siegen, D-57068 Siegen (Germany)

2013-01-01

We investigate the incorporation of iron atoms during nano-patterning of Si surfaces induced by 2 keV Kr{sup +} ion beam erosion under an off-normal incidence angle of 15°. Considering the low penetration depth of the ions, we have used X-ray reflectivity (XRR) and X-ray absorption near edge spectroscopy (XANES) under grazing-incidence angles in order to determine the depth profile and phase composition of the incorporated iron atoms in the near surface region, complemented by secondary ion mass spectrometry and atomic force microscopy. XRR analysis shows the accumulation of metallic atoms within a near surface layer of a few nanometer thickness. We verify that surface pattern formation takes place only when the co-sputtered Fe concentration exceeds a certain limit. For high Fe concentration, the ripple formation is accompanied by the enhancement of Fe close to the surface, whereas no Fe enhancement is found for low Fe concentration at samples with smooth surfaces. Modeling of the measured XANES spectra reveals the appearance of different silicide phases with decreasing Fe content from the top towards the volume. - Highlights: ► We investigate the incorporation of iron atoms during nano-patterning of Si surfaces. ► Pattern formation occurs when the areal density of Fe exceeds a certain threshold. ► X-ray reflectivity shows a layering at near surface due to incorporated Fe atoms. ► It is shown that the patterning is accompanied with the appearance of Fe-rich silicide.

Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

International Nuclear Information System (INIS)

Shulga, V.I.

2014-01-01

The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

Binding energy effects in cascade evolution and sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1995-06-01

The MARLOWE model was extended to include a binding energy dependent on the local crystalline order, so that atoms are bound less strongly to their lattice sites near surfaces or associated damage. Sputtering and cascade evolution were studied on the examples of self-ion irradiations of Cu and Au monocrystals. In cascades, the mean binding energy is reduced ∼8% in Cu with little dependence on the initial recoil energy; in Au, it is reduced ∼9% at 1 keV and ∼15% at 100 keV. In sputtering, the mean binding energy is reduced ∼8% in Cu and ∼15% in Au with little energy dependence; the yields are increased about half as much. Most sites from which sputtered atoms originate are isolated in both metals. Small clusters of such sites occur in Cu, but there are some large clusters in Au, especially in [111] targets. There are always more large clusters with damage-dependent binding than with a constant binding energy, but only a few clusters are compact enough to be regarded as pits

Monocrystal sputtering by the computer simulation code ACOCT

International Nuclear Information System (INIS)

Yamamura, Yasunori; Takeuchi, Wataru.

1987-09-01

A new computer code ACOCT has been developed in order to simulate the atomic collisions in the crystalline target within the binary collision approximation. The present code is more convenient as compared with the MARLOWE code, and takes the higher-order simultaneous collisions into account. To cheke the validity of the ACOCT program, we have calculated sputtering yields for various ion-target combinations and compared with the MARLOWE results. It is found that the calculated yields by the ACOCT program are in good agreements with those by the MARLOWE code. The ejection patterns of sputtered atoms were also calculated for the major surfaces of fcc, bcc, diamond and hcp structures, and we have got reasonable agreements with experimental results. In order to know the effects of the simultaneous collision in the slowing down process the sputtering yields and the projected ranges are calculated, changeing the parameter of the criterion for the simultaneous collision, and the effect of the simultaneous collision is found to depend on the crystal orientation. (author)

Simulation of carbon sputtering due to molecular hydrogen impact

International Nuclear Information System (INIS)

Laszlo, J.

1993-01-01

Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

Sputtering of nano-grains by energetic ions

CERN Document Server

Bringa, E M

2002-01-01

Sputtering from grains with a size of tens of nanometers is important in a number of astrophysical environments having a variety of plasma properties and can have applications in nano-technology. Since energy deposition by incident ions or electrons can create 'hot' regions in a small grain, thermal spike (TS) models have been applied to estimate the sputtering. The excitations produced by a fast ion are often assumed to form a 'hot' cylindrical track. In this paper we use molecular dynamics (MD) calculations to describe the energy transport and sputtering due to the creation of a 'hot' track in a grain with one quarter million atoms. We show the enhancement due to grain size and find that TS models work over a limited range of excitation densities. Discrepancies of several orders of magnitude are found when comparing our MD results for sputtering of small dust grains to those obtained by the astrophysical community using spike models.

The excitation functions of 4s-4p and 3d-4p transitions in Ni atoms sputtered from metallic targets by Ar+ ions

International Nuclear Information System (INIS)

Dabrowski, P.; Gabla, L.; Pedrys, R.

1981-01-01

The intensities of spectral lines corresponding to 4s-4p and 3d-4p transitions in Ni atoms sputtered from metallic targets by Ar + ions were measured. The energy of primary ions was varied from 4 keV to 10 keV. Both single crystal and polycrystalline targets were used at various temperatures including ferromagnetic and paramagnetic phases. The excitation functions calculated from experimental data can be explained only by the assumption that the promotion of the electrons occurs during energetic binary collisions of atomic particles in the solid. (orig.)

Light emission from sputtered or backscattered atoms on tungsten surfaces under ion irradiation

International Nuclear Information System (INIS)

Sakai, Yasuhiro; Nogami, Keisuke; Kato, Daiji; Sakaue, Hiroyuki A.; Kenmotsu, Takahiko; Furuya, Kenji; Motohashi, Kenji

2013-01-01

We measured the intensity of light emission from sputtered atoms on tungsten surfaces under the irradiations of Kr"+ ion and Ar"+ ion, as a function of the perpendicular distance from the surface. Using the analysis of decay curve, we estimated the mean vertical velocity component in direction normal to the surface. We found that the estimated mean velocity had much differences according to the excited state. For example, although the estimated mean vertical velocity component normal to the surface from the 400.9 nm line((5d"5(6S)6p "7p_4→(5d"5(6S)6s "7S_3 transition) was 5.6±1.7 km/sec, that from the 386.8 nm line((5d"4(6S)6p "7D_4→(5d"5(6S)6s "7S_4 transition) was 2.8±1.0 km/sec. However, for different projectiles and energies, we found no remarkable changes in the velocity. (author)

Angular distributions of particles sputtered from multicomponent targets with gas cluster ions

Energy Technology Data Exchange (ETDEWEB)

Ieshkin, A.E. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Ermakov, Yu.A., E-mail: yuriermak@yandex.ru [Skobeltsyn Nuclear Physics Research Institute, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation); Chernysh, V.S. [Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, Moscow 119991 (Russian Federation)

2015-07-01

The experimental angular distributions of atoms sputtered from polycrystalline W, Cd and Ni based alloys with 10 keV Ar cluster ions are presented. RBS was used to analyze a material deposited on a collector. It has been found that the mechanism of sputtering, connected with elastic properties of materials, has a significant influence on the angular distributions of sputtered components. The effect of non-stoichiometric sputtering at different emission angles has been found for the alloys under cluster ion bombardment. Substantial smoothing of the surface relief was observed for all targets irradiated with cluster ions.

The influence of landing points on the sputtering of mono-crystal solids due to cluster impacting

Energy Technology Data Exchange (ETDEWEB)

Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi, E-mail: zsyang@ipp.ac.cn; Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn

2017-01-15

The mechanism of sputtering due to cluster impacting which has been widely studied is an important but unsolved problem. In present research, we discuss the effect of the landing point on the sputtering with the method of molecular dynamics. The results show that the landing points play significant roles on sputter yield when the temperature of target is low. Specific landing points can cause particular sputtering patterns which lead to different sputtering yield and moving directions of sputtered atoms. The mechanism of this phenomenon is that specific landing keeps symmetries and anisotropies of target lattice, which influence the sputtering yield.

Study of atomic excitations in sputtering with the use of N, O, F, Ne, Na, Cl, and Ar projectiles

International Nuclear Information System (INIS)

Jensen, H.K.; Veje, E.

1985-01-01

Solid magnesium has been bombarded with 80 keV ions of N, O, F, Ne, Na, Cl, and Ar, and excitation of sputtered magnesium atoms and ions has been studied. Relative level excitation probabilities depend strongly on the projectile, the dependences for Mg I levels being different from those for Mg II levels. With all projectiles, the resonance level in Mg II is excited stronger than the resonance level in Mg I. Very little radiation is observed from the projectiles except for sodium. The results are discussed. (orig.)

Versatile sputtering technology for Al2O3 gate insulators on graphene

Directory of Open Access Journals (Sweden)

Miriam Friedemann, Mirosław Woszczyna, André Müller, Stefan Wundrack, Thorsten Dziomba, Thomas Weimann and Franz J Ahlers

2012-01-01

Full Text Available We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2 V− 1 s−1 in monolayer graphene and 350 cm2 V− 1 s−1 in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

Texture variations and atomic dislocations by Ar-irradiation in Au and NbN sputtered layers

International Nuclear Information System (INIS)

Jung, V.

1988-02-01

Irradiation of Au and NbN sputtered layers with Ar ++ ions of 600 keV leads to a narrower orientation distribution of the [111] direction of the Au layers from 12 0 FWHM to 6 0 and to only very small FWHM changes in texture distributions of the NbN layers. But the FWHM of the reflex distribution of the irradiated NbN layers is increased significantly from ΔΘ = 0.65 0 to 1.17 0 for one sample position. This is caused by small atomic dislocations in the NbN lattice. The FWHM of reflex distribution of the Au layers increased only from ΔΘ = 0.60 0 to 0.65 0 after irradiation. Oblique incidence of Ar ++ ions causes, by absence of channeling, stronger distortions than perpendicular incidence. (orig.) [de

On the microstructure and interfacial properties of sputtered nickel ...

Indian Academy of Sciences (India)

Administrator

On the microstructure and interfacial properties of sputtered nickel ... (FE-SEM) and atomic force microscope (AFM) revealed columnar morphology with voided boundaries for ..... compound phase formation by performing the deposition.

Net sputtering rate due to hot ions in a Ne-Xe discharge gas bombarding an MgO layer

International Nuclear Information System (INIS)

Ho, S.; Tamakoshi, T.; Ikeda, M.; Mikami, Y.; Suzuki, K.

2011-01-01

An analytical method is developed for determining net sputtering rate for an MgO layer under hot ions with low energy ( h i , above a threshold energy of sputtering, E th,i , multiplied by a yield coefficient. The threshold energy of sputtering is determined from dissociation energy required to remove an atom from MgO surface multiplied by an energy-transfer coefficient. The re-deposition rate of the sputtered atoms is calculated by a diffusion simulation using a hybridized probabilistic and analytical method. These calculation methods are combined to analyze the net sputtering rate. Maximum net sputtering rate due to the hot neon ions increases above the partial pressure of 4% xenon as E h Ne becomes higher and decreases near the partial pressure of 20% xenon as ion flux of neon decreases. The dependence due to the hot neon ions on partial pressure and applied voltage agrees well with experimental results, but the dependence due to the hot xenon ions deviates considerably. This result shows that the net sputtering rate is dominated by the hot neon ions. Maximum E h Ne (E h Ne,max = 5.3 - 10.3 eV) is lower than E th,Ne (19.5 eV) for the MgO layer; therefore, weak sputtering due to the hot neon ions takes place. One hot neon ion sputters each magnesium and each oxygen atom on the surface and distorts around a vacancy. The ratio of the maximum net sputtering rate is approximately determined by number of the ions at E h i,max multiplied by an exponential factor of -E th,i /E h i,max .

Comparison of the quantitative analysis performance between pulsed voltage atom probe and pulsed laser atom probe

Energy Technology Data Exchange (ETDEWEB)

Takahashi, J., E-mail: takahashi.3ct.jun@jp.nssmc.com [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Kawakami, K. [Advanced Technology Research Laboratories, Nippon Steel & Sumitomo Metal Corporation, 20-1 Shintomi, Futtsu-city, Chiba 293-8511 (Japan); Raabe, D. [Max-Planck Institut für Eisenforschung GmbH, Department for Microstructure Physics and Alloy Design, Max-Planck-Str. 1, 40237 Düsseldorf (Germany)

2017-04-15

Highlights: • Quantitative analysis in Fe-Cu alloy was investigated in voltage and laser atom probe. • In voltage-mode, apparent Cu concentration exceeded actual concentration at 20–40 K. • In laser-mode, the concentration never exceeded the actual concentration even at 20 K. • Detection loss was prevented due to the rise in tip surface temperature in laser-mode. • Preferential evaporation of solute Cu was reduced in laser-mode. - Abstract: The difference in quantitative analysis performance between the voltage-mode and laser-mode of a local electrode atom probe (LEAP3000X HR) was investigated using a Fe-Cu binary model alloy. Solute copper atoms in ferritic iron preferentially field evaporate because of their significantly lower evaporation field than the matrix iron, and thus, the apparent concentration of solute copper tends to be lower than the actual concentration. However, in voltage-mode, the apparent concentration was higher than the actual concentration at 40 K or less due to a detection loss of matrix iron, and the concentration decreased with increasing specimen temperature due to the preferential evaporation of solute copper. On the other hand, in laser-mode, the apparent concentration never exceeded the actual concentration, even at lower temperatures (20 K), and this mode showed better quantitative performance over a wide range of specimen temperatures. These results indicate that the pulsed laser atom probe prevents both detection loss and preferential evaporation under a wide range of measurement conditions.

Dependence of energy per molecule on sputtering yields with reactive gas cluster ions

International Nuclear Information System (INIS)

Toyoda, Noriaki; Yamada, Isao

2010-01-01

Gas cluster ions show dense energy deposition on a target surface, which result in the enhancement of chemical reactions. In reactive sputtering with gas cluster ions, the energy per atom or molecule plays an important role. In this study, the average cluster size (N, the number of atoms or molecules in a cluster ion) was controlled; thereby the dependences of the energy per molecule on the sputtering yields of carbon by CO 2 cluster ions and that of Si by SF 6 /Ar mixed gas cluster ions were investigated. Large CO 2 cluster ions with energy per molecule of 1 eV showed high reactive sputtering yield of an amorphous carbon film. However, these ions did not cause the formation of large craters on a graphite surface. It is possible to achieve very low damage etching by controlling the energy per molecule of reactive cluster ions. Further, in the case of SF 6 /Ar mixed cluster ions, it was found that reactive sputtering was enhanced when a small amount of SF 6 gas (∼10%) was mixed with Ar. The reactive sputtering yield of Si by one SF 6 molecule linearly increased with the energy per molecule.

AFM characterization of nonwoven material functionalized by ZnO sputter coating

International Nuclear Information System (INIS)

Deng Bingyao; Yan Xiong; Wei Qufu; Gao Weidong

2007-01-01

Sputter coatings provide new approaches to the surface functionalization of textile materials. In this study, polyethylene terephthalate (PET) nonwoven material was used as a substrate for creating functional nanostructures on the fiber surfaces. A magnetron sputter coating was used to deposit functional zinc oxide (ZnO) nanostructures onto the nonwoven substrate. The evolution of the surface morphology of the fibers in the nonwoven web was examined using atomic force microscopy (AFM). The AFM observations revealed a significant difference in the morphology of the fibers before and after the sputter coating. The AFM images also indicated the effect of the sputtering conditions on the surface morphology of the fibers. The increase in the sputtering time led to the growth of the ZnO grains on the fiber surfaces. The higher pressure in the sputtering chamber could cause the formation of larger grains on the fiber surfaces. The higher power used also generated larger grains on the fiber surfaces

Surfactant Sputtering: Theory of a new method of surface nanostructuring by ion beams

International Nuclear Information System (INIS)

Kree, R.; Yasseri, T.; Hartmann, A.K.

2009-01-01

We present a new Monte Carlo model and a new continuum theory of surface pattern formation due to 'surfactant sputtering', i.e. erosion by ion beam sputtering including a submonolayer coverage of additional, co-sputtered surfactant atoms. This setup, which has been realized in recent experiments in a controlled way leads to a number of interesting possibilities to modify pattern forming processing conditions. We will present three simple scenarios, which illustrate some potential applications of the method. In all three cases, simple Bradley-Harper type ripples appear in the absence of surfactant, whereas new, interesting structures emerge during surfactant sputtering.

Production of Hydrated Metal Ions by Fast Ion or Atom Beam Sputtering. Collision-Induced Dissociation and Successive Hydration Energies of Gaseous Cu+ with 1-4 Water Molecules

NARCIS (Netherlands)

Magnera, Thomas F.; David, Donald E.; Stulik, Dusan; Orth, Robert G.; Jonkman, Harry T.; Michl, Josef

1989-01-01

Low-temperature sputtering of frozen aqueous solutions of metal salts, of hydrated crystalline transition-metal salts, of frosted metal surfaces, and of frosted metal salts with kiloelectronvolt energy rare gas atoms or ions produces copious amounts of cluster ions, among which M+(H2O)n and/or

Niobium films produced by magnetron sputtering using an Ar-He mixture as discharge gas

CERN Document Server

Schucan, G M; Calatroni, Sergio

1995-01-01

Superconducting RF accelerating cavities have been produced at CERN by sputter-coating, with a thin niobium layer, cavities made of copper. In the present work, the discharge behaviour and niobium film properties have been investigated when part of the argon sputtering gas is replaced with helium. Helium is chosen because of its low mass, which reduces the energy lost by the niobium atoms colliding with the sputter gas atoms. The higher niobium atom energy should lead to higher adatom mobility on the substrate and, hence, to a larger grain size, a feature which is highly desirable to reduce the cavity surface resistance. It has been found that helium addition effectively helps to maintain the discharge at considerably lower argon pressures, via metastable-neutral ionisation and high secondary electron yield. However, a large amount of helium is trapped in the film, amount which is proportional to the helium partial pressure during the discharge, resulting in a reduction of both Residual Resistivity Ratio and ...

Ambient-temperature fabrication of microporous carbon terminated with graphene walls by sputtering process for hydrogen storage applications

International Nuclear Information System (INIS)

Banerjee, Arghya Narayan; Joo, Sang Woo; Min, Bong-Ki

2013-01-01

A very thin amorphous carbon film (10–30 nm), has been bombarded with sputtered Cr nanoparticles, resulting in inelastic collision between the nanoparticles and the nuclei of the C-atoms causing atom displacement and re-arrangement into graphene layers. The process occurs at ambient temperature. Fabrication of graphitic microporous carbon terminated with few-to-multilayer graphene walls has been verified by Raman spectroscopy and scanning transmission electron microscopy. High resolution transmission electron micrographs reveal that the formation of graphene layers is highly sensitive to the sputtering parameters. With a gradual increase in the sputtering voltage/current density/time from 3.5 kV/40 mA–cm −2 /1.0 min to 5.0 kV/70 mA–cm −2 /3.0 min the graphitic domains are found to transform from semi-graphitized layers to well-defined, highly ordered, larger-area graphene walls within the microporous network. The mechanism of this graphitic microporous carbon formation is assumed to be due to two simultaneous processes: in one hand, the sputtering plasma, containing energetic ions and sub-atomic particles, act as dry-etchant to activate the a:C film to transform it into microporous carbon, whereas on the other hand, the charged metal nanoparticle/ion bombardment under sputtering resulted in the inelastic collision between the nanoparticles/ions and the nuclei of the C atoms followed by atom displacement (and displacement cascade) and re-arrangement into ordered structure to form graphitic domains within the microporous carbon network. H 2 storage experiment of the samples depicts excellent hydrogen storage properties. This simple, cost-effective, complementary-metal-oxide-semiconductor-compatible, single-step process of metal-graphene hybrid nanomaterial formation may find interesting applications in the field of optoelectronics and biotechnology. Additionally, this method can be adopted easily for the incorporation of transition metals into graphene and

The corrosion and passivity of sputtered Mg–Ti alloys

International Nuclear Information System (INIS)

Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

2016-01-01

Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

A theoretical approach to sputtering due to molecular ion bombardment, 1

International Nuclear Information System (INIS)

Karashima, Shosuke; Ootoshi, Tsukuru; Kamiyama, Masahide; Kim, Pil-Hyon; Namba, Susumu.

1981-01-01

A shock wave model is proposed to explain theoretically the non-linear effects in sputtering phenomena by molecular ion bombardments. In this theory the sputtering processes are separated into two parts; one is due to linear effects and another is due to non-linear effects. The treatment of the linear parts is based on the statistical model by Schwarz and Helms concerning a broad range of atomic collision cascades. The non-linear parts are treated by the model of shock wave due to overlapping cascades, and useful equations to calculate the sputtering yields and the dynamical quantities in the system are derived. (author)

Production of rare-earth atomic negative ion beams in a cesium-sputter-type negative ion source

International Nuclear Information System (INIS)

Davis, V.T.; Covington, A.M.; Duvvuri, S.S.; Kraus, R.G.; Emmons, E.D.; Kvale, T.J.; Thompson, J.S.

2007-01-01

The desire to study negative ion structure and negative ion-photon interactions has spurred the development of ion sources for use in research and industry. The many different types of negative ion sources available today differ in their characteristics and abilities to produce anions of various species. Thus the importance of choosing the correct type of negative ion source for a particular research or industrial application is clear. In this study, the results of an investigation on the production of beams composed of negatively-charged rare-earth ions from a cylindrical-cathode-geometry, cesium-sputter-type negative ion source are presented. Beams of atomic anions have been observed for most of the first-row rare-earth elements, with typical currents ranging from hundreds of picoamps to several nanoamps

Time-dependent angular distribution of sputtered particles from amorphous targets

International Nuclear Information System (INIS)

Yamamura, Yasunori

1990-01-01

Using the time-evolution computer simulation code DYACAT, the time-dependent behavior of sputtering phenomena has been investigated. The DYACAT program is based on the binary collision approximation, and the cascade development in solids is followed time-evolutionally. The total sputtering yield, the angular distribution and the energy distribution of sputtered atoms are calculated as a function of time for 1 keV Ar→Cu, where the angle of incidence is the inverse surface normal. It is found that the angular distribution of the prompt collisional phase of the sputtering process shows an under-cosine and that the corresponding energy spectrum has a peak near 10 eV. The slow collisional phase of 1 keV Ar→Cu will start after 3x10 -14 s, and its angular distribution shows an over-cosine distribution. (orig.)

Comparison of the quantitative analysis performance between pulsed voltage atom probe and pulsed laser atom probe.

Science.gov (United States)

Takahashi, J; Kawakami, K; Raabe, D

2017-04-01

The difference in quantitative analysis performance between the voltage-mode and laser-mode of a local electrode atom probe (LEAP3000X HR) was investigated using a Fe-Cu binary model alloy. Solute copper atoms in ferritic iron preferentially field evaporate because of their significantly lower evaporation field than the matrix iron, and thus, the apparent concentration of solute copper tends to be lower than the actual concentration. However, in voltage-mode, the apparent concentration was higher than the actual concentration at 40K or less due to a detection loss of matrix iron, and the concentration decreased with increasing specimen temperature due to the preferential evaporation of solute copper. On the other hand, in laser-mode, the apparent concentration never exceeded the actual concentration, even at lower temperatures (20K), and this mode showed better quantitative performance over a wide range of specimen temperatures. These results indicate that the pulsed laser atom probe prevents both detection loss and preferential evaporation under a wide range of measurement conditions. Copyright © 2017 Elsevier B.V. All rights reserved.

Sputtering of amorphous carbon layers studied by laser induced fluorescence

International Nuclear Information System (INIS)

Pasch, E.

1992-07-01

In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

Examinations for the determination of the flux density of sputtered iron using laser induced fluorescence

International Nuclear Information System (INIS)

Schweer, H.B.

1983-11-01

In this work investigations are described to measure the flux density of sputtered iron atoms by means of laser induced fluorescence. In a laboratory experiment an iron target (stainless steel 316, Inconel 600), was bombarded with 10 keV Ar + and 2.5 keV H + and the population distribution of the energy levels of the ground state a 5 D and the metastable state a 5 F was measured. In the plasma wall region in the ISX-B tokamak at the Oak Ridge National Laboratory (USA) neutral iron atoms were measured the first time by laser induced fluorescence. A detection limit of 10 6 atoms/cm 3 was found and sputtered iron atoms were observed in the first 15 ms of the discharge. (orig./BRB)

Energy sharing and sputtering in low-energy collision cascades

International Nuclear Information System (INIS)

Weller, R.A.; Weller, M.R.

1982-01-01

Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

Structural investigation of ZnO:Al films deposited on the Si substrates by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Chen, Y.Y.; Yang, J.R.; Cheng, S.L.; Shiojiri, M.

2013-01-01

ZnO:Al films 400 nm thick were prepared on (100) Si substrates by magnetron sputtering. Energy dispersive X-ray spectroscopy and transmission electron microscopy (TEM) revealed that in the initial stage of the deposition, an amorphous silicon oxide layer about 4 nm thick formed from damage to the Si substrate due to sputtered particle bombardment and the incorporation of Si atoms with oxygen. Subsequently, a crystalline Si (Zn) layer about 30 nm thick grew on the silicon oxide layer by co-deposition of Si atoms sputtered away from the substrate with Zn atoms from the target. Finally, a ZnO:Al film with columnar grains was deposited on the Si (Zn) layer. The sputtered particle bombardment greatly influenced the structure of the object films. The (0001) lattice fringes of the ZnO:Al film were observed in high-resolution TEM images, and the forbidden 0001 reflection spots in electron diffraction patterns were attributed to double diffraction. Therefore, the appearance of the forbidden reflection did not imply any ordering of Al atoms and/or O vacancies in the ZnO:Al film. - Highlights: • ZnO:Al films were deposited on (100) Si substrate using magnetron sputtering. • An amorphous silicon oxide layer with a thickness of 4 nm was formed on Si substrate. • Crystalline Si (Zn) layer about 30 nm thick grew on amorphous silicon oxide layer. • ZnO:Al film comprising columnar grains was deposited on the Si(Zn) layer. • Lattice image of the ZnO:Al film has been interpreted

Atom beam sputtered Ag-TiO{sub 2} plasmonic nanocomposite thin films for photocatalytic applications

Energy Technology Data Exchange (ETDEWEB)

Singh, Jaspal; Sahu, Kavita [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India); Pandey, A. [Solid State Physics Laboratory, Defence Research and Development Organization, Timarpur, Delhi 110054 (India); Kumar, Mohit [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Ghosh, Tapas; Satpati, B. [Saha Institute of Nuclear Physics, HBNI, 1/AF, Bidhannagar, Kolkata 700064 (India); Som, T.; Varma, S. [Institute of Physics, Sachivalaya Marg, Bhubaneswar, Odisha 751005 (India); Avasthi, D.K. [Amity Institute of Nanotechnology, Noida 201313, Uttar Pradesh (India); Mohapatra, Satyabrata, E-mail: smiuac@gmail.com [School of Basic and Applied Sciences, Guru Gobind Singh Indraprastha University, Dwarka, NewDelhi 110078 (India)

2017-07-31

The development of nanocomposite coatings with highly enhanced photocatalytic activity is important for photocatalytic purification of water and air. We report on the synthesis of Ag-TiO{sub 2} nanocomposite thin films with highly enhanced photocatalytic activity by atom beam co-sputtering technique. The effects of Ag concentration on the structural, morphological, optical, plasmonic and photocatalytic properties of the nanocomposite thin films were investigated. UV–visible DRS studies revealed the presence of surface plasmon resonance (SPR) peak characteristic of Ag nanoparticles together with the excitonic absorption peak originating from TiO{sub 2} nanoparticles in the nanocomposites. XRD studies showed that the nanocomposite thin films consist of Ag nanoparticles and rutile TiO{sub 2} nanoparticles. The synthesized Ag-TiO{sub 2} nanocomposite thin films with 5 at% Ag were found to exhibit highly enhanced photocatalytic activity for sun light driven photocatalytic degradation of methylene blue in water, indicating their potential application in water purification.

Helium-Charged La-Ni-Al Thin Films Deposited by Magnetron Sputtering

International Nuclear Information System (INIS)

Shi Liqun; Chen Deming; Xu Shilin; Liu Chaozhu; Hao Wanli; Zhou Zhuyin

2005-01-01

An advanced implantation of low energy helium-4 atoms during the La-Ni-Al film growth by adopting magnetron sputtering with Ar/He mixture gases is discussed. Both proton backscattering spectroscopy (PBS) and elastic recoil detection (ERD) analyses were adopted to measure helium concentration of the films and distribution in the near-surface region. Helium atoms with a high concentration incorporate evenly in deposited film. The introduction of the helium with no extra irradiation damage is expected by choosing suitable deposition conditions. It was found that amorphous and crystalline LaNi 5 -type structures can be achieved when sputtered with pure Ar and Ar/He mixture gases at room temperature, respectively. Thermal desorption experiments proposes that a part of hydrogen atoms are bound to trapped helium at crystal and releases together with helium. Only a small fraction of helium is released from the helium-vacancy clusters in lower temperature range and most of helium is released from small size helium bubbles in the high temperature range

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

Underlying ion-beam modification of surfaces is the more basic subject of particle-surface interaction. The ideas can be grouped into forward and backward features, i.e. those affecting the interior of the target and those leading to particle expulsion. Forward effects include the stopping of the incident particles and the deposition of energy, both governed by integral equations which are easily set up but difficult to solve. Closely related is recoil implantation where emphasis is placed not on the stopping of the incident particles but on their interaction with target atoms with resulting implantation of these atoms. Backward effects, all of which are denoted as sputtering, are in general either of collisional, thermal, electronic, or exfoliational origin. (Auth.)

Sputtering of solid nitrogen and oxygen by keV hydrogen ions

DEFF Research Database (Denmark)

Ellegaard, O.; Schou, Jørgen; Stenum, B.

1994-01-01

Electronic sputtering of solid nitrogen and oxygen by keV hydrogen ions has been studied at two low-temperature setups. The yield of the sputtered particles has been determined in the energy regime 4-10 keV for H+, H-2+ and H-3+ ions. The yield for oxygen is more than a factor of two larger than...... that for nitrogen. The energy distributions of the sputtered N2 and O2 molecules were measured for hydrogen ions in this energy regime as well. The yields from both solids turn out to depend on the sum of the stopping power of all atoms in the ion. The yield increases as a quadratic function of the stopping power...

Molecular dynamics simulations with electronic stopping can reproduce experimental sputtering yields of metals impacted by large cluster ions

Science.gov (United States)

Tian, Jiting; Zhou, Wei; Feng, Qijie; Zheng, Jian

2018-03-01

An unsolved problem in research of sputtering from metals induced by energetic large cluster ions is that molecular dynamics (MD) simulations often produce sputtering yields much higher than experimental results. Different from the previous simulations considering only elastic atomic interactions (nuclear stopping), here we incorporate inelastic electrons-atoms interactions (electronic stopping, ES) into MD simulations using a friction model. In this way we have simulated continuous 45° impacts of 10-20 keV C60 on a Ag(111) surface, and found that the calculated sputtering yields can be very close to the experimental results when the model parameter is appropriately assigned. Conversely, when we ignore the effect of ES, the yields are much higher, just like the previous studies. We further expand our research to the sputtering of Au induced by continuous keV C60 or Ar100 bombardments, and obtain quite similar results. Our study indicates that the gap between the experimental and the simulated sputtering yields is probably induced by the ignorance of ES in the simulations, and that a careful treatment of this issue is important for simulations of cluster-ion-induced sputtering, especially for those aiming to compare with experiments.

Molecular dynamics simulation study of the influence of the lattice atom potential function upon atom ejection processes

International Nuclear Information System (INIS)

Harrison, D.E. Jr.; Webb, R.P.

1982-01-01

A molecular dynamics simulation has been used to investigate the sensitivity of atom ejection processes from a single-crystal target to changes in the atom-atom potential function. Four functions, three constructed from the Gibson potentials with Anderman's attractive well, and a fouth specifically developed for this investigation, were investigated in the Cu/Ar/sup +/ system over a range of ion energies from 1.0 to 10.0 kev with the KSE-B ion-atom potential. Well depths and widths also were varied. The calculations were done at normal incidence on the fcc (111) crystal orientation. Computed values were compared with experimental data where they exist. Sputtering yields, multimer yield ratios, layer yield ratios, and the ejected atom energy distribution vary systematically with the parameters of the atom-atom potential function. Calculations also were done with the modified Moliere function. Yields and other properties fall exactly into the positions predicted from the Born-Mayer function analysis. Simultaneous analysis of the ejected atom energy distribution and the ion energy dependence of the sputtering yield curve provides information about the parameters of both the wall and well portions of the atom-atom potential function

Plasma properties during magnetron sputtering of lithium phosphorous oxynitride thin films

DEFF Research Database (Denmark)

Christiansen, Ane Sælland; Stamate, Eugen; Thydén, Karl Tor Sune

2015-01-01

The nitrogen dissociation and plasma parameters during radio frequency sputtering of lithium phosphorus oxynitride thin films in nitrogen gas are investigated by mass appearance spectrometry, electrostatic probes and optical emission spectroscopy, and the results are correlated with electrochemical...... properties and microstructure of the films. Low pressure and moderate power are associated with lower plasma density, higher electron temperature, higher plasma potential and larger diffusion length for sputtered particles. This combination of parameters favors the presence of more atomic nitrogen, a fact...

Simple model of surface roughness for binary collision sputtering simulations

Science.gov (United States)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-02-01

It has been shown that surface roughness can strongly influence the sputtering yield - especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the "density gradient model") which imitates surface roughness effects. In the model, the target's atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient - leading to increased sputtering yields, similar in effect to surface roughness.

Simultaneous impact of neutron irradiation and sputtering on the surface structure of self–damaged ITER–grade tungsten

Energy Technology Data Exchange (ETDEWEB)

Belyaeva, A. I., E-mail: aibelyaeva@mail.ru; Savchenko, A. A. [National Technical University “Kharkov Politechnical Institute”, Kharkov, 61002 (Ukraine); Galuza, A. A.; Kolenov, I. V. [Institute of Electrophysics and Radiation Technologies, National Academy of Science of Ukraine, Kharkov, 61024 (Ukraine)

2014-07-15

Simultaneous effects of neutron irradiation and long–term sputtering on the surface relief of ITER–grade tungsten were studied. The effects of neutron–induced displacement damage have been simulated by irradiation of tungsten target with W{sup 6+} ions of 20 MeV energy. Ar{sup +} ions with energy 600 eV were used as imitation of charge exchange atoms in ITER. The surface relief was studied after each sputtering act. The singularity in the WJ–IG surface relief was ascertained experimentally at the first time, which determines the law of roughness extension under sputtering. As follows from the experimental data, the neutron irradiation has not to make a decisive additional contribution in the processes developing under impact of charge exchange atoms only.

Sputtering and emission intensity of cast irons with different metallurgical structures in a Grimm glow lamp

International Nuclear Information System (INIS)

Fujita, M.; Kashima, J.; Naganuma, K.

1981-01-01

The cathodic sputtering and emission intensities for the white, gray and malleable cast irons in the Grimm glow lamp are discussed. The intensities of the Fe 247.98-nm line for the samples of the three types depend linearly on the electrical power but the slopes of the plots differ. The intensity of the carbon line at 247.86 nm for malleable cast iron is weaker than those for the others. Sputtering is influenced by the form of the graphite, which can lead to distortion of the electrical field. Graphite on malleable cast iron is sputtered not only as atomic carbon but also as moieties containing several carbon atoms. The higher the supplied voltage, the shorter the time for the intensities of the Fe I and C I lines to reach constant values. (Auth.)

C60 ion sputtering of layered organic materials

International Nuclear Information System (INIS)

Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

2008-01-01

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

Combined optical emission and resonant absorption diagnostics of an Ar-O{sub 2}-Ce-reactive magnetron sputtering discharge

Energy Technology Data Exchange (ETDEWEB)

El Mel, A.A. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Institut des Matériaux Jean Rouxel, Université de Nantes, CNRS, 2 rue de la Houssinière B.P. 32229, Nantes Cedex 3 44322 (France); Ershov, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Britun, N., E-mail: nikolay.britun@umons.ac.be [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Ricard, A. [Université de Toulouse, UPS, INPT, LAPLACE (Laboratoire Plasma et Conversion d' Energie), 118 route de Narbonne, Toulouse Cedex 9 F-31062 (France); Konstantinidis, S. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Snyders, R. [Chimie des Interactions Plasma-Surface (ChIPS), Research Institute for Materials Science and Engineering, Université de Mons, Place du Parc 23, Mons B-7000 (Belgium); Materia Nova Research Center, Parc Initialis, Avenue Copernic 1, Mons B-7000 (Belgium)

2015-01-01

We report the results on combined optical characterization of Ar-O{sub 2}-Ce magnetron sputtering discharges by optical emission and resonant absorption spectroscopy. In this study, a DC magnetron sputtering system equipped with a movable planar magnetron source with a Ce target is used. The intensities of Ar, O, and Ce emission lines, as well as the absolute densities of Ar metastable and Ce ground state atoms are analyzed as a function of the distance from the magnetron target, applied DC power, O{sub 2} content, etc. The absolute number density of the Ar{sup m} is found to decrease exponentially as a function of the target-to-substrate distance. The rate of this decrease is dependent on the sputtering regime, which should be due to the different collisional quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents. Quantitatively, the absolute number density of Ar{sup m} is found to be equal to ≈ 3 × 10{sup 8} cm{sup −3} in the metallic, and ≈ 5 × 10{sup 7} cm{sup −3} in the oxidized regime of sputtering, whereas Ce ground state densities at the similar conditions are found to be few times lower. The absolute densities of species are consistent with the corresponding deposition rates, which decrease sharply during the transition from metallic to poisoned sputtering regime. - Highlights: • Optical emission and resonant absorption spectroscopy are employed to study Ar-O{sub 2}-Ce magnetron sputtering discharges. • The density of argon metastables is found to decrease exponentially when increasing the target-to-substrate distance. • The collision-quenching rates of Ar{sup m} by O{sub 2} molecules at different oxygen contents is demonstrated. • The deposition rates of cerium and cerium oxide thin films decrease sharply during the transition from the metallic to the poisoned sputtering regime.

Sputtered catalysts

International Nuclear Information System (INIS)

Tyerman, W.J.R.

1978-01-01

A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

Effect of argon ion sputtering of surface on hydrogen permeation through vanadium

International Nuclear Information System (INIS)

Yamawaki, Michio; Namba, Takashi; Yoneoka, Toshiaki; Kanno, Masayoshi; Shida, Koji.

1983-01-01

In order to measure the hydrogen permeation rate through V with atomically cleaned surface, an Ar ion sputtering apparatus has been installed in the hydrogen permeability measuring system. The permeation rate of the initial specimen was found to be increased by about one order of magnitude after Ar ion sputtering of its upstream side surface. Repeating of such a sputter-cleaning was not so much effective in increasing the steady state permeation rate as the initial sputtering was, but it accelerated the transient response rate by a factor of 2 or 3. The transient response rate was also accelerated by the increase of hydrogen pressure, but this effect tended to be diminished by the sputter-cleaning of specimen surface. The surface impurity layer on the downstream side of specimen was also inferred to act as a diffusion barrier affecting the steady state permeation rate. The present value of activation energy for hydrogen permeation through V at temperatures below 873K was the smallest one ever obtained, showing that the surface effect was minimized in the present study on account of the surface sputter-cleaning in addition to the ultra high vacuum system. (author)

Characterization of copper thin films prepared by metal self-ion beam sputter deposition

International Nuclear Information System (INIS)

Gotoh, Yasuhito; Amioka, Takao; Tsuji, Hiroshi; Ishikawa, Junzo

1994-01-01

New deposition technique, 'metal-ion beam self-sputtering' method has been developed. Using metal ions which is the same element with the target material, no contamination with noble gas atoms, which are often used in the conventional sputtering, will occur. In this paper, fundamental measurement of the film purity is reported. As a result of PIXE measurements, it was clarified that only slight amount of iron is incorporated in the films. (author)

The deconvolution of sputter-etching surface concentration measurements to determine impurity depth profiles

International Nuclear Information System (INIS)

Carter, G.; Katardjiev, I.V.; Nobes, M.J.

1989-01-01

The quasi-linear partial differential continuity equations that describe the evolution of the depth profiles and surface concentrations of marker atoms in kinematically equivalent systems undergoing sputtering, ion collection and atomic mixing are solved using the method of characteristics. It is shown how atomic mixing probabilities can be deduced from measurements of ion collection depth profiles with increasing ion fluence, and how this information can be used to predict surface concentration evolution. Even with this information, however, it is shown that it is not possible to deconvolute directly the surface concentration measurements to provide initial depth profiles, except when only ion collection and sputtering from the surface layer alone occur. It is demonstrated further that optimal recovery of initial concentration depth profiles could be ensured if the concentration-measuring analytical probe preferentially sampled depths near and at the maximum depth of bombardment-induced perturbations. (author)

Stress evolution during and after sputter deposition of thin Cu Al alloy films

Science.gov (United States)

Pletea, M.; Wendrock, H.; Kaltofen, R.; Schmidt, O. G.; Koch, R.

2008-06-01

The stress evolution during and after sputter deposition of thin Cu-Al alloy films containing 1 and 2 at.% Al onto oxidized Si(100) substrates has been studied up to thicknesses of 300 nm by means of in situ substrate curvature measurements. In order to correlate stress and morphology, the microstructure was investigated by focused ion beam microscopy, scanning electron microscopy, and atomic force microscopy. The evolution of the stress and microstructure of the Cu-Al alloy films is similar to that for sputtered pure Cu films. Film growth proceeds in the Volmer-Weber mode, typical for high mobility metals. It is characterized by nucleation, island, percolation, and channel stages before the films become continuous, as well as lateral grain growth in the compact films. With increasing Al content the overall atom mobility and, thus, the average grain size of the alloy films are reduced. Increase of the sputter pressure from 0.5 to 2 Pa leads to films with larger grain size, rougher surface morphology and higher electrical resistivity.

Co-deposition of silver nanoclusters and sputtered alumina for sensor devices

International Nuclear Information System (INIS)

Schultes, Guenter; Schmidt, Michael; Truar, Marcel; Goettel, Dirk; Freitag-Weber, Olivia; Werner, Ulf

2007-01-01

Heterogeneous thin films may be beneficial for sensoring devices. The electrical conductivity of nanoscale metallic particles being embedded in a matrix of non conducting material should exhibit higher sensitivity to mechanical stress and strain compared to homogeneous films. The production of heterogeneous films may follow different routes. This paper describes the attempt to embed Ag nanoclusters emitted from a gas aggregation cluster source into a growing matrix of alumina originating from sputter sources. The characteristics of the cluster source are first resumed, with their mean masses ranging from approx. 1000 to 100,000 atoms per cluster. The expelled and soft landed clusters are extensively examined by transmission electron microscopy verifying their crystalline form. Yet the use of a radio frequency driven sputter source for the embed material destroys and annihilates the Ag clusters even at very low sputter power. If a reactive direct current sputter process is performed within an oxidising sputter gas instead, the Ag clusters are oxidised to different oxides, but they survive as crystalline entities as verified by X-ray diffraction investigations. A simple subsequent heat treatment reduces the Ag oxides to metallic Ag clusters

Effect of sputtering on self-damaged recrystallized W mirror specimens

Energy Technology Data Exchange (ETDEWEB)

Voitsenya, V.S. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Balden, M. [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Belyaeva, A.I. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Alimov, V.Kh. [Hydrogen Isotope Research Center, University of Toyama, Toyama 930-8555 (Japan); Tyburska-Püschel, B., E-mail: tyburska@engr.wisc.edu [Max-Planck-Institut für Plasmaphysik, EURATOM Association, D-85748 Garching (Germany); Galuza, A.A. [Institute of Electrophysics and Radiation Technologies, NAS of Ukraine, 61002 Kharkov (Ukraine); Kasilov, A.A.; Kolenov, I.V. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine); Konovalov, V.G. [National Technical University, “Kharkiv Polytechnical Institute”, 61002 Kharkov (Ukraine); Skoryk, O.O.; Solodovchenko, S.I. [Institute of Plasma Physics, National Scientific Center “KIPT”, 61108 Kharkov (Ukraine)

2013-03-15

The effect of heavy sputtering and of neutron irradiation simulated by displacement damaging with of 20 MeV W{sup 6+} ions on the optical properties of tungsten mirrors was studied. Ar{sup +} ions with 600 eV of energy were used as imitation of charge exchange atoms ejected from fusion plasma. The ion fluence dependence of the surface topography and the optical properties of polycrystalline, recrystallized tungsten (grain size 20–100 μm) were studied by optical microscopy, interferometry, reflectometry and ellipsometry. Furthermore, after sputtering in total a layer of 3.9 μm in thickness, the orientation and the thickness of the eroded layer of many individual grains was determined by electron backscattering diffraction and confocal laser scanning microscopy. Concluding from the obtained data the neutron irradiation, at least at the damage level would be achieved in ITER, has not to make an additional contribution in the processes developing under impact of charge exchange atoms only.

Dependence of sputtering erosion on fuel-pellet characteristics

International Nuclear Information System (INIS)

Bohachevsky, I.O.; Hafer, J.F.

1977-11-01

Conceptual designs of fusion reactors operating on the principle of inertial confinement require that the dependence of cavity-wall erosion on fuel-pellet energy yield, its mass, and representative atomic number be known. A simple approximate model of sputtering erosion is presented and explicit formulas are derived that express the total amount of eroded wall material in terms of the above three parameters

Quantitative determination of impurities in nuclear grade aluminum by Flame-Atomic Absorption Spectrometry

International Nuclear Information System (INIS)

Jat, J.R.; Nayak, A.K.; Balaji Rao, Y.; Ravindra, H.R.

2013-01-01

The paper deals with quantitative determination of impurity elements in nuclear grade aluminum, used as fin tubes in research reactors, by Flame-Atomic Absorption Spectrometry (F-AAS). The results have been compared with those obtained by Inductively Coupled Plasma Atomic Emission Spectrometry (ICP-AES) method. Experimental conditions used in both the methods are given in the paper. (author)

Simple model of surface roughness for binary collision sputtering simulations

Energy Technology Data Exchange (ETDEWEB)

Lindsey, Sloan J. [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Hobler, Gerhard, E-mail: gerhard.hobler@tuwien.ac.at [Institute of Solid-State Electronics, TU Wien, Floragasse 7, A-1040 Wien (Austria); Maciążek, Dawid; Postawa, Zbigniew [Institute of Physics, Jagiellonian University, ul. Lojasiewicza 11, 30348 Kraków (Poland)

2017-02-15

Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

Simple model of surface roughness for binary collision sputtering simulations

International Nuclear Information System (INIS)

Lindsey, Sloan J.; Hobler, Gerhard; Maciążek, Dawid; Postawa, Zbigniew

2017-01-01

Highlights: • A simple model of surface roughness is proposed. • Its key feature is a linearly varying target density at the surface. • The model can be used in 1D/2D/3D Monte Carlo binary collision simulations. • The model fits well experimental glancing incidence sputtering yield data. - Abstract: It has been shown that surface roughness can strongly influence the sputtering yield – especially at glancing incidence angles where the inclusion of surface roughness leads to an increase in sputtering yields. In this work, we propose a simple one-parameter model (the “density gradient model”) which imitates surface roughness effects. In the model, the target’s atomic density is assumed to vary linearly between the actual material density and zero. The layer width is the sole model parameter. The model has been implemented in the binary collision simulator IMSIL and has been evaluated against various geometric surface models for 5 keV Ga ions impinging an amorphous Si target. To aid the construction of a realistic rough surface topography, we have performed MD simulations of sequential 5 keV Ga impacts on an initially crystalline Si target. We show that our new model effectively reproduces the sputtering yield, with only minor variations in the energy and angular distributions of sputtered particles. The success of the density gradient model is attributed to a reduction of the reflection coefficient – leading to increased sputtering yields, similar in effect to surface roughness.

Isotope puzzle in sputtering

International Nuclear Information System (INIS)

Zheng Liping

1998-01-01

Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

Computer simulation of electronic excitation in atomic collision cascades

Energy Technology Data Exchange (ETDEWEB)

Duvenbeck, A.

2007-04-05

The impact of an keV atomic particle onto a solid surface initiates a complex sequence of collisions among target atoms in a near-surface region. The temporal and spatial evolution of this atomic collision cascade leads to the emission of particles from the surface - a process usually called sputtering. In modern surface analysis the so called SIMS technology uses the flux of sputtered particles as a source of information on the microscopical stoichiometric structure in the proximity of the bombarded surface spots. By laterally varying the bombarding spot on the surface, the entire target can be scanned and chemically analyzed. However, the particle detection, which bases upon deflection in electric fields, is limited to those species that leave the surface in an ionized state. Due to the fact that the ionized fraction of the total flux of sputtered atoms often only amounts to a few percent or even less, the detection is often hampered by rather low signals. Moreover, it is well known, that the ionization probability of emitted particles does not only depend on the elementary species, but also on the local environment from which a particle leaves the surface. Therefore, the measured signals for different sputtered species do not necessarily represent the stoichiometric composition of the sample. In the literature, this phenomenon is known as the Matrix Effect in SIMS. In order to circumvent this principal shortcoming of SIMS, the present thesis develops an alternative computer simulation concept, which treats the electronic energy losses of all moving atoms as excitation sources feeding energy into the electronic sub-system of the solid. The particle kinetics determining the excitation sources are delivered by classical molecular dynamics. The excitation energy calculations are combined with a diffusive transport model to describe the spread of excitation energy from the initial point of generation. Calculation results yield a space- and time-resolved excitation

Computer simulation of electronic excitation in atomic collision cascades

International Nuclear Information System (INIS)

Duvenbeck, A.

2007-01-01

The impact of an keV atomic particle onto a solid surface initiates a complex sequence of collisions among target atoms in a near-surface region. The temporal and spatial evolution of this atomic collision cascade leads to the emission of particles from the surface - a process usually called sputtering. In modern surface analysis the so called SIMS technology uses the flux of sputtered particles as a source of information on the microscopical stoichiometric structure in the proximity of the bombarded surface spots. By laterally varying the bombarding spot on the surface, the entire target can be scanned and chemically analyzed. However, the particle detection, which bases upon deflection in electric fields, is limited to those species that leave the surface in an ionized state. Due to the fact that the ionized fraction of the total flux of sputtered atoms often only amounts to a few percent or even less, the detection is often hampered by rather low signals. Moreover, it is well known, that the ionization probability of emitted particles does not only depend on the elementary species, but also on the local environment from which a particle leaves the surface. Therefore, the measured signals for different sputtered species do not necessarily represent the stoichiometric composition of the sample. In the literature, this phenomenon is known as the Matrix Effect in SIMS. In order to circumvent this principal shortcoming of SIMS, the present thesis develops an alternative computer simulation concept, which treats the electronic energy losses of all moving atoms as excitation sources feeding energy into the electronic sub-system of the solid. The particle kinetics determining the excitation sources are delivered by classical molecular dynamics. The excitation energy calculations are combined with a diffusive transport model to describe the spread of excitation energy from the initial point of generation. Calculation results yield a space- and time-resolved excitation

Secondary ion formation during electronic and nuclear sputtering of germanium

Science.gov (United States)

Breuer, L.; Ernst, P.; Herder, M.; Meinerzhagen, F.; Bender, M.; Severin, D.; Wucher, A.

2018-06-01

Using a time-of-flight mass spectrometer attached to the UNILAC beamline located at the GSI Helmholtz Centre for Heavy Ion Research, we investigate the formation of secondary ions sputtered from a germanium surface under irradiation by swift heavy ions (SHI) such as 5 MeV/u Au by simultaneously recording the mass spectra of the ejected secondary ions and their neutral counterparts. In these experiments, the sputtered neutral material is post-ionized via single photon absorption from a pulsed, intensive VUV laser. After post-ionization, the instrument cannot distinguish between secondary ions and post-ionized neutrals, so that both signals can be directly compared in order to investigate the ionization probability of different sputtered species. In order to facilitate an in-situ comparison with typical nuclear sputtering conditions, the system is also equipped with a conventional rare gas ion source delivering a 5 keV argon ion beam. For a dynamically sputter cleaned surface, it is found that the ionization probability of Ge atoms and Gen clusters ejected under electronic sputtering conditions is by more than an order of magnitude higher than that measured for keV sputtered particles. In addition, the mass spectra obtained under SHI irradiation show prominent signals of GenOm clusters, which are predominantly detected as positive or negative secondary ions. From the m-distribution for a given Ge nuclearity n, one can deduce that the sputtered material must originate from a germanium oxide matrix with approximate GeO stoichiometry, probably due to residual native oxide patches even at the dynamically cleaned surface. The results clearly demonstrate a fundamental difference between the ejection and ionization mechanisms in both cases, which is interpreted in terms of corresponding model calculations.

Examination of excited state populations in sputtering using Multiphoton Resonance Ionization

International Nuclear Information System (INIS)

Kimock, F.M.; Baxter, J.P.; Pappas, D.L.; Kobrin, P.H.; Winograd, N.

1984-01-01

Multiphoton Resonance Ionization has been employed to study the populations of excited state atoms ejected from ion bombarded metal surfaces. Preliminary investigations have focused on three model systems: aluminum, indium and cobalt. In this paper the authors examine the effect of primary ion energy (2 to 12 keV Ar + ) on excited state yields for these three systems. The influence of the sample matrix on excited state populations of sputtered atoms is also discussed

Tribological characterization of TiN coatings prepared by magnetron sputtering

Science.gov (United States)

Makwana, Nishant S.; Chauhan, Kamlesh V.; Sonera, Akshay L.; Chauhan, Dharmesh B.; Dave, Divyeshkumar P.; Rawal, Sushant K.

2018-05-01

Titanium nitride (TiN) coating deposited on aluminium and brass pin substrates using RF reactive magnetron sputtering. The structural properties and surface morphology were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and field emission scanning electron microscope (FE-SEM). There was formation of (101) Ti2N, (110) TiN2 and (102) TiN0.30 peaks at 3.5Pa, 2Pa and 1.25Pa sputtering pressure respectively. The tribological properties of coating were inspected using pin on disc tribometer equipment. It was observed that TiN coated aluminium and brass pins demonstrated improved wear resistance than uncoated aluminium and brass pins.

A Mossbauer study of Kr incorporations in sputtered a-Si films

NARCIS (Netherlands)

Rosu, M.F; Niesen, L; van Veen, A.; Sloof, W.G.

1996-01-01

Krypton atoms incorporated in sputtered a-silicon films are investigated by means of Kr-83 Mosssbauer spectroscopy. The hyperfine parameters of the (RbI)-Rb-83 source were determined by taking a spectrum against solid krypton. Mossbauer spectra were taken for films containing krypton concentrations

Zn Thin Film Deposition for Fe Layer Shielding Use the Sputtering Technique on Cylindrical Form

International Nuclear Information System (INIS)

Yunanto; Tjipto Sujitno, BA; Suprapto; Simbolon, Sahat

2002-01-01

Deposition of thin film on Fe substrate use sputtering technique on cylindrical form was carried out. The purpose of this research is to protect Fe due to the corrosion with Zn thin film. Sputtering method was proposed to protect a component of complex form. Substrate has functioned as anode, meanwhile target in cylindrical form as a cathode. Argon ion from anode bombard Zn with enough energy for releasing Zn. Zn atom would scatter and some of then was focused on the anode. For testing Zn atom on Fe by using XRF and corrosion rate with potentiostat. It was found that corrosion rate was decreased from 0.051 mpy to 0.031 mpy on 0.63 % of Fe substrate. (author)

Basic electrochemical properties of sputtered gold film electrodes

International Nuclear Information System (INIS)

Libansky, Milan; Zima, Jiri; Barek, Jiri; Reznickova, Alena; Svorcik, Vaclav; Dejmkova, Hana

2017-01-01

Gold nanolayers made by sputtering of pure gold (physical vapour deposition) are commonly used for many biophysical and material applications. However, the use of sputtering method for fabrication of working electrodes for electroanalytical purposes is less common. This paper focuses on the testing and characterization of sputtered working roughened gold nanostructured film electrodes, which fall into category of upcoming desirable new generation of nanostructured gold working electrodes. Gold nanostructured films (80 nm thin) were sputtered onto 50 μm thin PTFE substrates with three different types of treatment: pristine, plasma treated, and plasma treated and subsequently spontaneously grafted with biphenyl-4,4′-dithiol. The characterization of gold nanostructured film electrodes was carried out by examination of the electrode reaction of standard redox probes (ferrocyanide/ferricyanide, hydroquinone/benzoquinone) in different types of supporting electrolytes (BR buffers of various pH, KCl, KNO 3 , H 2 SO 4 ), by exploration of the electrode surface by scanning electron microscopy, by atomic force microscopy accompanied by elementary analysis and contact angle measurements. The testing of electrodes was complemented by an attempt to calculate their real surface areas from Randles-Sevcik equation. All results were compared to conventional bulk gold electrode. The practical applicability of the nanostructured gold electrodes as sensors for the determination of environmental pollutants was verified by voltammetric determination of hydroquinone as a model electrochemically oxidisable organic environmental pollutant.

Study of uranium dioxyde sputtering induced by multicharged heavy ions at low and very low kinetic energy: projectile charge effect

International Nuclear Information System (INIS)

Haranger, F.

2003-12-01

Ion beam irradiation of a solid can lead to the emission of neutral or ionized atoms, molecules or clusters from the surface. This comes as a result of the atomic motion in the vicinity of the surface, induced by the transfer of the projectile energy. Then, the study of the sputtering process appears as a means to get a better understanding of the excited matter state around the projectile trajectory. In the case of slow multicharged ions, a strong electronic excitation can be achieved by the projectile neutralization above the solid surface and / or its deexcitation below the surface. Parallel to this, the slowing down of such ions is essentially related to elastic collision with the target atoms. The study of the effect of the initial charge state of slow multicharged ions, in the sputtering process, has been carried out by measuring the absolute angular distributions of emission of uranium atoms from a uranium dioxide surface. The experiments have been performed in two steps. First, the emitted particles are collected onto a substrate during irradiation. Secondly, the surface of the collectors is analyzed by Rutherford Backscattering Spectrometry (RBS). This method allows the characterization of the emission of neutrals, which are the vast majority of the sputtered particles. The results obtained provide an access to the evolution of the sputtering process as a function of xenon projectile ions charge state. The measurements have been performed over a wide kinetic energy range, from 81 down to 1.5 keV. This allowed a clear separation of the contribution of the kinetic energy and initial projectile charge state to the sputtering phenomenon. (author)

Limit of quantitation in atomic spectrometry: An unambiguous concept?

International Nuclear Information System (INIS)

Mermet, Jean-Michel

2008-01-01

This document presents a tutorial description of several concepts and definitions of limits of quantitation, such as the so-called 10 s, the RSD net , the method limit, the lower limit of the calibration graph and the uncertainty approaches. Use, advantages, limitations and complexity of the various approaches are illustrated with some examples taken from atomic spectrometry, using ICP-AES, ICP-MS and LIBS. Information that can be deduced from the calibration graph is emphasized

Solar system sputtering

Science.gov (United States)

Tombrello, T. A.

1982-01-01

The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

Energy Technology Data Exchange (ETDEWEB)

Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

2016-10-15

Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

Dielectric properties of DC reactive magnetron sputtered Al2O3 thin films

International Nuclear Information System (INIS)

Prasanna, S.; Mohan Rao, G.; Jayakumar, S.; Kannan, M.D.; Ganesan, V.

2012-01-01

Alumina (Al 2 O 3 ) thin films were sputter deposited over well-cleaned glass and Si substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 °C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al 2 O 3 -Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: ► Al 2 O 3 thin films were deposited by DC reactive magnetron sputtering. ► The films were found to be amorphous up to annealing temperature of 550 C. ► An increase in rms roughness of the films was observed with annealing. ► Al-Al 2 O 3 -Al thin film capacitors were fabricated and dielectric constant was 7.5. ► The activation energy decreased with increase in frequency.

Study of the ion sputter-machining, 1

International Nuclear Information System (INIS)

Miyamoto, Iwao; Taniguchi, Norio

1979-01-01

A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

HF treatment effect for carbon deposition on silicon (111) by DC sputtering technique

Energy Technology Data Exchange (ETDEWEB)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Darma, Y., E-mail: aji.ravazes70@gmail.com [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2014-03-24

Surface modifications of Si (111) substrate by HF solution for thin film carbon deposition have been systematically studied. Thin film carbon on Si (111) has been deposited using DC Unbalanced Magnetron Sputtering with carbon pellet doped by 5% Fe as the target. EDAX characterization confirmed that the carbon fraction on Si substrate much higher by dipping a clean Si substrate by HF solution before sputtering process in comparison with carbon fraction on Si substrate just after conventional RCA. Moreover, SEM and AFM images show the uniform thin film carbon on Si with HF treatment, in contrast to the Si without HF solution treatment. These experimental results suggest that HF treatment of Si surface provide Si-H bonds on top Si surface that useful to enhance the carbon deposition during sputtering process. Furthermore, we investigate the thermal stability of thin film carbon on Si by thermal annealing process up to 900 °C. Atomic arrangements during annealing process were characterized by Raman spectroscopy. Raman spectra indicate that thin film carbon on Si is remaining unchanged until 600 °C and carbon atoms start to diffuse toward Si substrate after annealing at 900 °C.

Des atomes d'antihydrogene produits en quantites substantielles au CERN

CERN Multimedia

Sevestre, G

2002-01-01

"Des quantites relativement substantielles d'atomes d'antihydrogene a basse temperature ont ete produites cet ete au Laboratoire europeen de physique des particules, le CERN a Geneve, ouvrant la voie a une etude approfondie de cette antimatiere qui pourrait remettre en cause les theories actuelles, a annonce mercredi sur le site Internet de la revue Nature une equipe internationale de chercheurs" (1 page).

Nitinol: Tubing versus sputtered film - microcleanliness and corrosion behavior.

Science.gov (United States)

Wohlschlögel, Markus; Lima de Miranda, Rodrigo; Schüßler, Andreas; Quandt, Eckhard

2016-08-01

Corrosion behavior and microcleanliness of medical-device grade Nitinol tubing (Nix Ti1- x , x = 0.51; outer diameter 7 mm, wall thickness 0.5 mm), drawn from various ingot qualities, are compared to the characteristics of sputtered Nitinol film material (Nix Ti1- x , x = 0.51; thickness 50 µm). Electropolished tubing half-shell samples are tested versus as-received sputtered film samples. Inclusion size distributions are assessed using quantitative metallography and corrosion behavior is investigated by potentiodynamic polarization testing in phosphate-buffered saline at body temperature. For the sputtered film samples, the surface chemistry is additionally analyzed employing Auger Electron Spectroscopy (AES) composition-depth profiling. Results show that the fraction of breakdowns in the potentiodynamic polarization test correlates with number and size of the inclusions in the material. For the sputtered Nitinol film material no inclusions were detectable by light microscopy on the one hand and no breakdowns were found in the potentiodynamic polarization test on the other hand. As for electropolished Nitinol, the sputtered Nitinol film material reveals Nickel depletion and an Oxygen-to-Titanium intensity ratio of ∼2:1 in the surface oxide layer, as measured by AES. © 2015 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater, 104B: 1176-1181, 2016. © 2015 Wiley Periodicals, Inc.

Examination of excited state populations in sputtering using multiphoton resonance ionization

International Nuclear Information System (INIS)

Kimock, F.M.; Baxter, J.P.; Pappas, D.L.; Kobrin, P.H.; Winograd, N.

1984-01-01

Multiphoton Resonance Ionization has been employed to study the populations of excited state atoms ejected from ion bombarded metal surfaces. Preliminary investigations have focused on three model systems: aluminum, indium and cobalt. In this paper we examine the effect of primary ion energy (2 to 12 keV Ar + ) on excited state yields for these three systems. The influence of the sample matrix on excited state populations of sputtered atoms is also discussed. 8 refs., 4 figs

Entrapment of krypton in sputter deposited metals: a storage medium for radioactive gases

International Nuclear Information System (INIS)

Tingey, G.L.; McClanahan, E.D.; Bayne, M.A.; Moss, R.W.

1979-04-01

Sputter deposition of metals with a negative substrate bias results in a deposit containing relatively large concentrations of the sputtering gas. This phenomenon has been applied as a technique for storage of the radioactive gas, 85 Kr, which is generated in nuclear fuels for power production. Alloys which sputter to yield an amorphous product have been shown to contain up to 12 atom % Kr [42 cm 3 of Kr(STP)/g of deposit; concentration equivalent to a gas at 4380 psi pressure]. Release from these metals occurs at so low a rate that extrapolation to long times yields a 85 Kr release at 300 0 C of about 0.06% in 100 years. A preliminary evaluation of the engineering feasibility and economics of the sputtering process indicates that 85 Kr can be effectively trapped in a solid matrix with currently available techniques on a scale required for handling DOE-generated waste or commercial reprocessed fuels and that the cost should not be a limiting factor

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

Energy Technology Data Exchange (ETDEWEB)

Dolotov, S.K.; Evstigneev, S.A.; Luk' yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

1976-07-01

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal.

Removal of foreign atoms from a metal surface bombarded with fast atomic particles

International Nuclear Information System (INIS)

Dolotov, S.K.; Evstigneev, S.A.; Luk'yanov, S.Yu.; Martynenko, Yu.V.; Chicherov, V.M.

A metal surface coated with foreign atoms was irradiated with periodically repeating ion current pulses. The energy of the ions bombarding the target was 20 to 30 keV, and inert gas ions were used. A study of the time dependences of the current of the dislodged foreign atoms showed that the rate of their removal from the target surface is determined by the sputtering coefficient of the substrate metal

Origins of Beta Tantalum in Sputtered Coatings

National Research Council Canada - National Science Library

Mulligan, C

2001-01-01

.... Some of the most recent work has attempted to relate the energetics (i.e., atom/ion energy) of the plasma to the alpha right arrow beta transition. It has been shown that the energetics of the plasma can relate to the most crucial sputtering parameters. The most significant feature of the use of plasma energy to explain the alpha right arrow beta transition is that it relates the formation of beta-tantalum to a quantifiable measure.

Quantitative annular dark field scanning transmission electron microscopy for nanoparticle atom-counting: What are the limits?

International Nuclear Information System (INIS)

De Backer, A; De Wael, A; Gonnissen, J; Martinez, G T; Béché, A; Van Aert, S; MacArthur, K E; Jones, L; Nellist, P D

2015-01-01

Quantitative atomic resolution annular dark field scanning transmission electron microscopy (ADF STEM) has become a powerful technique for nanoparticle atom-counting. However, a lot of nanoparticles provide a severe characterisation challenge because of their limited size and beam sensitivity. Therefore, quantitative ADF STEM may greatly benefit from statistical detection theory in order to optimise the instrumental microscope settings such that the incoming electron dose can be kept as low as possible whilst still retaining single-atom precision. The principles of detection theory are used to quantify the probability of error for atom-counting. This enables us to decide between different image performance measures and to optimise the experimental detector settings for atom-counting in ADF STEM in an objective manner. To demonstrate this, ADF STEM imaging of an industrial catalyst has been conducted using the near-optimal detector settings. For this experiment, we discussed the limits for atomcounting diagnosed by combining a thorough statistical method and detailed image simulations. (paper)

Shallow surface depth profiling with atomic resolution

International Nuclear Information System (INIS)

Xi, J.; Dastoor, P.C.; King, B.V.; O'Connor, D.J.

1999-01-01

It is possible to derive atomic layer-by-layer composition depth profiles from popular electron spectroscopic techniques, such as X-ray photoelectron spectroscopy (XPS) or Auger electron spectroscopy (AES). When ion sputtering assisted AES or XPS is used, the changes that occur during the establishment of the steady state in the sputtering process make these techniques increasingly inaccurate for depths less than 3nm. Therefore non-destructive techniques of angle-resolved XPS (ARXPS) or AES (ARAES) have to be used in this case. In this paper several data processing algorithms have been used to extract the atomic resolved depth profiles of a shallow surface (down to 1nm) from ARXPS and ARAES data

Energy dependence of sputtering yields of Be, Be-C and Be-W films by Be{sup +}-ions

Energy Technology Data Exchange (ETDEWEB)

Korshunov, S.N.; Guseva, M.I.; Gureev, V.M.; Neumoin, V.E.; Stoljarova, V.G. [Russian Research Center Kurchatov Inst., Moscow (Russian Federation)

1998-01-01

The energy dependence measurements of Be, Be-C and Be-W deposited layer sputtering yields by Be{sup +}-ions were performed. The ion energy was varied in the range (0.3-5.0) keV. The temperature in the process of irradiation was sustained at the level of 670 K. The mixed layers were prepared by simultaneous sputtering of pair targets, Be and C, Be and W, and Be-targets with Ar{sup +}- and Be{sup +}-ions and codeposition of the sputtered atoms on silicon collectors The codeposited layer thickness was changed in the range of (500-1000) nm. The content of oxigen in the Be, Be-C, Be-W deposited layers did not exceed 20 at.%. The mixed layer sputtering yields were compared with the experimental and calculated data, obtained for the self-sputtering yields of beryllium and carbon. It was found that the sputtering yields of the Be-C and Be deposited layers by Be{sup +}-ions in the energy range (0.3-5.0) keV are within the range between the corresponding self-sputtering yields for Be and C. The sputtering yields for the mixture Be-W are close to the corresponding self-sputtering yields of beryllium. (author)

Investigation of blister formation in sputtered Cu{sub 2}ZnSnS{sub 4} absorbers for thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Bras, Patrice, E-mail: patrice.bras@angstrom.uu.se [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla, Sweden and Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden); Sterner, Jan [Midsummer AB, Elektronikhöjden 6, SE-17543 Järfälla (Sweden); Platzer-Björkman, Charlotte [Solid State Electronics, Angström Laboratory, Uppsala University, Box 534, SE-75121 Uppsala (Sweden)

2015-11-15

Blister formation in Cu{sub 2}ZnSnS{sub 4} (CZTS) thin films sputtered from a quaternary compound target is investigated. While the thin film structure, composition, and substrate material are not correlated to the blister formation, a strong link between sputtering gas entrapment, in this case argon, and blistering effect is found. It is shown that argon is trapped in the film during sputtering and migrates to locally form blisters during the high temperature annealing. Blister formation in CZTS absorbers is detrimental for thin film solar cell fabrication causing partial peeling of the absorber layer and potential shunt paths in the complete device. Reduced sputtering gas entrapment, and blister formation, is seen for higher sputtering pressure, higher substrate temperature, and change of sputtering gas to larger atoms. This is all in accordance with previous publications on blister formation caused by sputtering gas entrapment in other materials.

Sputtered Pd as hydrogen storage for a chip-integrated microenergy system.

Science.gov (United States)

Slavcheva, E; Ganske, G; Schnakenberg, U

2014-01-01

The work presents a research on preparation and physical and electrochemical characterisation of dc magnetron sputtered Pd films envisaged for application as hydrogen storage in a chip-integrated hydrogen microenergy system. The influence of the changes in the sputtering pressure on the surface structure, morphology, and roughness was analysed by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AMF). The electrochemical activity towards hydrogen adsorption/desorption and formation of PdH were investigated in 0.5 M H2SO4 using the methods of cyclic voltammetry and galvanostatic polarisation. The changes in the electrical properties of the films as a function of the sputtering pressure and the level of hydrogenation were evaluated before and immediately after the electrochemical charging tests, using a four-probe technique. The research resulted in establishment of optimal sputter regime, ensuring fully reproducible Pd layers with highly developed surface, moderate porosity, and mechanical stability. Selected samples were integrated as hydrogen storage in a newly developed unitized microenergy system and tested in charging (water electrolysis) and discharging (fuel cell) operative mode at ambient conditions demonstrating a stable recycling performance.

The Effect of Cu:Ag Atomic Ratio on the Properties of Sputtered Cu–Ag Alloy Thin Films

Directory of Open Access Journals (Sweden)

Janghsing Hsieh

2016-11-01

Full Text Available Cu–Ag thin films with various atomic ratios were prepared using a co-sputtering technique, followed by rapid thermal annealing at various temperatures. The films’ structural, mechanical, and electrical properties were then characterized using X-ray diffractometry (XRD, atomic force microscopy (AFM, FESEM, nano-indentation, and TEM as functions of compositions and annealing conditions. In the as-deposited condition, the structure of these films transformed from a one-phase to a dual-phase state, and the resistivity shows a twin-peak pattern, which can be explained in part by Nordheim’s Rule and the miscibility gap of Cu–Ag alloy. After being annealed, the films’ resistivity followed the mixture rule in general, mainly due to the formation of a dual-phase structure containing Ag-rich and Cu-rich phases. The surface morphology and structure also varied as compositions and annealing conditions changed. The recrystallization of these films varied depending on Ag–Cu compositions. The annealed films composed of 40 at % to 60 at % Cu had higher hardness and lower roughness than those with other compositions. Particularly, the Cu50Ag50 film had the highest hardness after being annealed. From the dissolution testing, it was found that the Cu-ion concentration was about 40 times higher than that of Ag. The galvanic effect and over-saturated state could be the cause of the accelerated Cu dissolution and the reduced dissolution of the Ag.

The mechanism of sputter-induced orientation change in YBCO films on MgO (001)

International Nuclear Information System (INIS)

Huang, Y.; Vuchic, B.V.; Baldo, P.; Merkle, K.L.; Buchholz, D.B.; Mahajan, S.; Lei, J.S.; Markworth, P.R.; Chang, R.P.H.

1996-12-01

The mechanisms of the sputter-induced orientation change in YBa 2 Cu 3 O 7-x (YBCO) films grown on MgO (001) substrates by pulsed organometallic beam epitaxy (POMBE) are investigated by x-ray diffraction. Rutherford backscatter spectroscopy (RBS), cross-section TEM (XTEM) and microanalysis. It is found that the W atom implantation concurring with the ion sputtering plays an important role in effecting the orientation change. This implantation changes the surface structure of the substrate and induces an intermediate layer in the initial growth of the YBCO film, which in turn acts as a template that induces the orientation change. It seems that the surface morphology change caused by ion sputtering has only a minor effect on the orientation change

Study on re-sputtering during CN{sub x} film deposition through spectroscopic diagnostics of plasma

Energy Technology Data Exchange (ETDEWEB)

Liang, Peipei; Yang, Xu; Li, Hui; Cai, Hua [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Sun, Jian; Xu, Ning [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Wu, Jiada, E-mail: jdwu@fudan.edu.cn [Department of Optical Science and Engineering, Fudan University, Shanghai 200433 (China); Shanghai Engineering Research Center of Ultra-Precision Optical Manufacturing, Fudan University, Shanghai 200433 (China); Engineering Research Center of Advanced Lighting Technology, Ministry of Education, Fudan University, Shanghai 200433 (China)

2015-10-15

A nitrogen-carbon plasma was generated during the deposition of carbon nitride (CN{sub x}) thin films by pulsed laser ablation of a graphite target in a discharge nitrogen plasma, and the optical emission of the generated nitrogen-carbon plasma was measured for the diagnostics of the plasma and the characterization of the process of CN{sub x} film deposition. The nitrogen-carbon plasma was recognized to contain various species including nitrogen molecules and molecular ions excited in the ambient N{sub 2} gas, carbon atoms and atomic ions ablated from the graphite target and CN radicals. The temporal evolution and spatial distribution of the CN emission and their dependence on the substrate bias voltage show two groups of CN radicals flying in opposite directions. One represents the CN radicals formed as the products of the reactions occurring in the nitrogen-carbon plasma, revealing the reactive deposition of CN{sub x} film due to the reactive expansion of the ablation carbon plasma in the discharge nitrogen plasma and the effective formation of gaseous CN radicals as precursors for CN{sub x} film growth. The other one represents the CN radicals re-sputtered from the growing CN{sub x} film by energetic plasma species, evidencing the re-sputtering of the growing film accompanying film growth. And, the re-sputtering presents ion-induced sputtering features.

Study of the chemical sputtering in Tore-Supra

International Nuclear Information System (INIS)

Cambe, A.

2002-01-01

The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C 2 D x and C 3 D y ) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD 4 (Y CD4 ) is highly flux (φ) dependent, showing a variation of the form: Y CD4 ∝ φ -0.23 . The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y CD4 . The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

Microstructure evolution in nanoporous gold thin films made from sputter-deposited precursors

International Nuclear Information System (INIS)

Gwak, Eun-Ji; Kang, Na-Ri; Baek, Un Bong; Lee, Hae Moo; Nahm, Seung Hoon; Kim, Ju-Young

2013-01-01

We fabricate almost crack-free 1.5 μm thick nanoporous gold thin films using free-corrosion dealloying and transfer processes from sputter-deposited precursors. By controlling the temperature and the concentration of the nitric acid solution during free-corrosion dealloying, we obtain ligament sizes in nanoporous gold between 22 and 155 nm. We investigate the effects of dissolution rate of Ag atoms, surface diffusivity of Au atoms and formation of Ag oxide on nanoporosity evolution

Damage at a tungsten surface induced by impacts of self-atoms

Energy Technology Data Exchange (ETDEWEB)

Wu, Yong [Data Center for High Energy Density Physics, Institute of Applied Physics and, Computational Mathematics, P. O. Box 8009, Beijing 100088 (China); Krstic, Predrag, E-mail: predrag.krstic@stonybrook.edu [Institute for Advanced Computational Science, Stony Brook University, Stony Brook, NY 11794-5250 (United States); Zhou, Fu Yang [College of Material Sciences and Optoelectronic Technology, University of the Chinese Academy of Sciences, P. O. Box 4588, Beijing 100049 (China); Meyer, Fred [Physics Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6372 (United States)

2015-12-15

We study evolution of the surface defects of a 300 K tungsten surface due to the cumulative impact of 0.25–10 keV self-atoms. The simulation is performed by molecular dynamics with bond-order Tersoff-form potentials. At all studied impact energies the computation shows strong defect-recombination effect of both created Frenkel pairs as well as recombination of the implanted atoms with the vacancies created by the sputtering. This leads to a saturation of the cumulative count of vacancies, evident at energies below 2 keV, as long as the implantation per impact atom exceeds sputtering and to a saturation of the interstitial count when production of the sputtered particles per impact atom becomes larger than 1 (in the energy range 2-4 keV). The number of cumulative defects is fitted as functions of impact fluence and energy, enabling their analytical extrapolation outside the studied range of parameters. - Highlights: • We calculated cumulative creation of defects in tungsten by self-atom impact. • At some energies, the defect count saturate with increasing damage dose. • The defects are accumulated in the first few layers of the tungsten surface. • The interstitials are formed predominantly as adatoms.

Properties of RF magnetron sputtered gallium nitride semiconductors doped with erbium

Czech Academy of Sciences Publication Activity Database

Peřina, Vratislav; Macková, Anna; Hnatowicz, Vladimír; Prajzler, V.; Machovič, V.; Matějka, P.; Schröfel, J.

2004-01-01

Roč. 36, č. 8 (2004), s. 952-954 ISSN 0142-2421 R&D Projects: GA ČR GA104/03/0387 Institutional research plan: CEZ:AV0Z1048901 Keywords : Er-doped GaN * luminescence * magnetron sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.209, year: 2004

Spectroellipsometric detection of silicon substrate damage caused by radiofrequency sputtering of niobium oxide

Science.gov (United States)

Lohner, Tivadar; Serényi, Miklós; Szilágyi, Edit; Zolnai, Zsolt; Czigány, Zsolt; Khánh, Nguyen Quoc; Petrik, Péter; Fried, Miklós

2017-11-01

Substrate surface damage induced by deposition of metal atoms by radiofrequency (rf) sputtering or ion beam sputtering onto single-crystalline silicon (c-Si) surface has been characterized earlier by electrical measurements. The question arises whether it is possible to characterize surface damage using spectroscopic ellipsometry (SE). In our experiments niobium oxide layers were deposited by rf sputtering on c-Si substrates in gas mixture of oxygen and argon. Multiple angle of incidence spectroscopic ellipsometry measurements were performed, a four-layer optical model (surface roughness layer, niobium oxide layer, native silicon oxide layer and ion implantation-amorphized silicon [i-a-Si] layer on a c-Si substrate) was created in order to evaluate the spectra. The evaluations yielded thicknesses of several nm for the i-a-Si layer. Better agreement could be achieved between the measured and the generated spectra by inserting a mixed layer (with components of c-Si and i-a-Si applying the effective medium approximation) between the silicon oxide layer and the c-Si substrate. High depth resolution Rutherford backscattering (RBS) measurements were performed to investigate the interface disorder between the deposited niobium oxide layer and the c-Si substrate. Atomic resolution cross-sectional transmission electron microscopy investigation was applied to visualize the details of the damaged subsurface region of the substrate.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

International Nuclear Information System (INIS)

Andersson, Joakim; Ni, Pavel; Anders, André

2013-01-01

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

International Nuclear Information System (INIS)

Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

2005-01-01

It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

The effect of the molecular mass on the sputtering by electrosprayed nanodroplets

Energy Technology Data Exchange (ETDEWEB)

Borrajo-Pelaez, Rafael; Gamero-Castaño, Manuel, E-mail: mgameroc@uci.edu

2015-07-30

Highlights: • We study the effect of the molecular mass on nanodroplet sputtering of silicon. • The impact phenomenology is a strong function of the projectile’s molecular mass. • Nanodroplet sputtering intrinsically is a molecular scale phenomenon. - Abstract: Energetic bombardment of covalently bonded materials by electrosprayed nanodroplets causes sputtering and topographic changes on the surface of the target. This work investigates the influence of the projectile's molecular mass on these phenomena by sputtering single-crystal silicon wafers with a variety of liquids (molecular masses between 45.0 and 773.3 amu), and acceleration voltages. The electrosprays are characterized via time of flight to determine the charge to mass ratio of the nanodroplets which, together with the acceleration voltage, yield the impact velocity, the stagnation pressure, and the molecular kinetic energy of the projectile. The estimated range of droplet diameters is 20–79 nm, while the impact velocity, the stagnation pressure and the molecular kinetic energy range between 2.9–10 km/s, 4.7–63 GPa, and 2.1–98 eV. We find that the damage on the surface of the targets strongly depends on the molecular mass of the projectile: liquids with low molecular mass sputter significantly less and produce nanometric indentations and low surface roughness, the latter increasing moderately with stagnation pressure; in contrast, the roughness and sputtering caused by the impacts of droplets with larger molecular mass reach significantly higher values, and exhibit non-monotonic behaviors. The maximum sputtering yields for formamide, EAN, EMI-BF{sub 4}, EMI-Im, TES, and TPP are 0.20, 0.75, 1.20, 2.80, 4.00 and 2.90 silicon atoms per molecule in the projectile. These trends indicate that despite their rather large diameters, the sputtering by electrosprayed nanodroplets is intrinsically a molecular scale phenomenon.

Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

International Nuclear Information System (INIS)

Li Dejie

2002-01-01

In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

O2-enhanced methanol oxidation reaction at novel Pt-Ru-C co-sputtered electrodes

International Nuclear Information System (INIS)

Umeda, Minoru; Matsumoto, Yosuke; Inoue, Mitsuhiro; Shironita, Sayoko

2013-01-01

Highlights: ► Novel Pt-Ru-C electrodes were prepared by a co-sputtering technique. ► Co-sputtered electrodes with C result in highly efficient O 2 -enhanced methanol oxidation. ► Pt–Ru-alloy-based co-sputtered electrode induces a negative onset potential of methanol oxidation. ► The Pt-Ru-C electrodes allow a negative onset potential of O 2 -enhanced methanol oxidation. ► The optimum atomic ratios of Pt-Ru-C are Pt: 0.24–0.80, Ru: 0.14–0.61, C: 0.06–0.37. -- Abstract: A Pt-Ru-C electrode has been developed using a co-sputtering technique for use as the anode catalyst of a mixed-reactant fuel cell. The physical and electrochemical characteristics of the electrodes demonstrate that co-sputtered Pt and Ru form a Pt–Ru alloy. The crystallite sizes of the catalysts investigated in this study are reduced by the addition of C to the Pt–Ru alloy. Cu stripping voltammograms suggest that the sputtering of C and the formation of the Pt–Ru alloy synergically increase the electrochemical surface area of the electrodes. The methanol oxidation performances of the prepared electrodes were evaluated in N 2 and O 2 atmospheres; the Pt-Ru-C electrodes achieve an O 2 -induced negative shift in the onset potential of the methanol oxidation (E onset ) and enhance the methanol oxidation current density in the O 2 atmosphere. The mechanism of O 2 -enhanced methanol oxidation with a negative E onset at the Pt-Ru-C electrodes is attributed to a change in the electronic structure of Pt due to the formation of Pt–Ru alloy and the generation of O-based adsorption species by the reduction of O 2 . Finally, the composition of the Pt-Ru-C electrode for the O 2 -enhanced methanol oxidation with a negative E onset was found to be optimal at an atomic ratio of Pt: 0.24–0.80, Ru: 0.14–0.61, and C: 0.06–0.37

Investigation of argon ion sputtering on the secondary electron emission from gold samples

Science.gov (United States)

Yang, Jing; Cui, Wanzhao; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

2016-09-01

Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An ;equivalent work function; is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called ;work function; (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

Study on helium-charged titanium films deposited by DC-magnetron sputtering

International Nuclear Information System (INIS)

Shi Liqun; Jin Qinhua; Liu Chaozhuo; Xu Shilin; Zhou Zhuying

2005-01-01

Helium trapping in the Ti films deposited by DC magnetron sputtering with a He/Ar mixture was studied. He atoms with a surprisingly high concentration (He/Ti atomic ratio is as high as 56%) incorporate evenly in deposited film. The trapped amount of He can be controlled by the helium partial amount. The introduction of the helium with no extra damage (or very low damage) can be realized by choosing suitable deposition conditions. It was also found that because of the formation of nanophase Ti film a relative high He flux for bubble formation is needed and the amount of the retaining He in sputtering Ti films is much higher than that in the coarse-grain Ti films. The nanophase Ti film can accommodate larger concentration of trapped sites to He, which results in a high density and small size of the He bubbles. With increasing He irradiation flux, the grain size of Ti film decreases and the lattice spacing and width of the X-ray diffraction peak increase due to the He introduction, and the film tends to amorphous phase. (authors)

Ion-assisted sputter deposition of molybdenum--silicon multilayers

International Nuclear Information System (INIS)

Vernon, S.P.; Stearns, D.G.; Rosen, R.S.

1993-01-01

X-ray multilayer (ML) structures that are fabricated by the use of magnetron-sputter deposition exhibit a degradation in structural quality as the deposition pressure is increased. The observed change in morphology is attributed to a reduced mobility of surface adsorbed atoms, which inhibits the formation of smooth, continuous layers. The application of a negative substrate bias produces ion bombardment of the growing film surface by sputtering gas ions extracted from the plasma and permits direct control of the energy density supplied to the film surface during thin-film growth. The technique supplements the energy lost to thermalization in high-pressure deposition and permits the fabrication of high-quality ML structures at elevated processing pressures. A threefold improvement in the soft-x-ray normal-incidence reflectance at 130 A results for substrate bias voltages of the order of ∼-150 V for Mo--Si ML's deposited at 10-mTorr Ar

Algan/Gan Hemt By Magnetron Sputtering System

Science.gov (United States)

Garcia Perez, Roman

In this thesis, the growth of the semiconductor materials AlGaN and GaN is achieved by magnetron sputtering for the fabrication of High Electron Mobility Transistors (HEMTs). The study of the deposited nitrides is conducted by spectroscopy, diffraction, and submicron scale microscope methods. The preparation of the materials is performed using different parameters in terms of power, pressure, temperature, gas, and time. Silicon (Si) and Sapphire (Al2O3) wafers are used as substrates. The chemical composition and surface topography of the samples are analyzed to calculate the materials atomic percentages and to observe the devices surface. The instruments used for the semiconductors characterization are X-ray Photoelectron Spectroscopy (XPS), X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), and Atomic Force Microscope (AFM). The project focused its attention on the reduction of impurities during the deposition, the controlled thicknesses of the thin-films, the atomic configuration of the alloy AlxGa1-xN, and the uniformity of the surfaces.

Discharge Characteristic of VHF-DC Superimposed Magnetron Sputtering System

Science.gov (United States)

Toyoda, Hirotaka; Fukuoka, Yushi; Fukui, Takashi; Takada, Noriharu; Sasai, Kensuke

2014-10-01

Magnetron plasmas are one of the most important tools for sputter deposition of thin films. However, energetic particles from the sputtered target such as backscattered rare gas atoms or oxygen negative ions from oxide targets sometimes induce physical and chemical damages as well as surface roughening to the deposited film surface during the sputtering processes. To suppress kinetic energy of such particles, superposition of RF or VHF power to the DC power has been investigated. In this study, influence of the VHF power superposition on the DC target voltage, which is important factor to determine kinetic energy of high energy particles, is investigated. In the study, 40 MHz VHF power was superimposed to an ITO target and decrease in the target DC voltage was measured as well as deposited film deposition properties such as deposition rate or electrical conductivity. From systematic measurement of the target voltage, it was revealed that the target voltage can be determined by a very simple parameter, i.e., a ratio of VHF power to the total input power (DC and VHF powers) in spite of the DC discharge current. Part of this work was supported by ASTEP, JST.

Doubly charged ion emission in sputtering of monocrystalline fluorides

Czech Academy of Sciences Publication Activity Database

Lörinčík, Jan; Šroubek, Zdeněk

2002-01-01

Roč. 187, č. 4 (2002), s. 447-450 ISSN 0168-583X. [Atomic Collisions in Solids ICACS /19./. Paris, 29.07.2001-03.08.2001] R&D Projects: GA AV ČR IAA1067801; GA ČR GA202/99/0881 Institutional research plan: CEZ:AV0Z2067918 Keywords : sputtering * molecular electronic states * secondary ion emission Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.158, year: 2002

Reactive sputter deposition

CERN Document Server

Mahieu, Stijn

2008-01-01

In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

Atomic and plasma-material interaction data for fusion. V. 7, part B. Particle induced erosion of Be, C and W in fusion plasmas. Part B: Physical sputtering and radiation-enhanced sublimation

International Nuclear Information System (INIS)

Eckstein, W.; Stephens, J.A.; Clark, R.E.H.; Davis, J.W.; Haasz, A.A.; Vietzke, E.; Hirooka, Y.

2001-01-01

The present volume of Atomic and Plasma-Material Interaction Data for Fusion is devoted to a critical review of the physical sputtering and radiation enhanced sublimation (RES) behaviour of fusion plasma-facing materials, in particular carbon, beryllium and tungsten. The present volume is intended to provide fusion reactor designers a detailed survey and parameterization of existing, critically assessed data for the chemical erosion of plasma-facing materials by particle impact. The survey and data compilation is presented for a variety of materials containing the elements C, Be and W (including dopants in carbon materials) and impacting plasma species. The dependencies of physical sputtering and RES yields on the material temperature, incident projectile energy, and incident flux are considered. The main data compilation is presented as separate data sheets indicating the material, impacting plasma species, experimental conditions, and parameterizations in terms of analytic functions

Atomic oxygen effect on the in situ growth of stoichiometric YBa2Cu3O7 - delta epitaxial films by facing targets 90° off-axis radiofrequency magnetron sputtering

Science.gov (United States)

Oya, Gin-ichiro; Diao, Chien Chen; Imai, Syozo; Uzawa, Takaaki; Sawada, Yasuji; Sugai, Tokuko; Nakajima, Kensuke; Yamashita, Tsutomu

1995-06-01

(110)- and (103)-oriented almost stoichiometric YBa2Cu3O7-δ (YBCO) films have been grown epitaxially on hot SrTiO3 (110) substrates using a 90° off-axis rf magnetron sputtering technique, for fabrication of vertical sandwich-type YBCO/insulator/YBCO or YBCO/normal metal/YBCO Josephson junctions utilizing the high-quality YBCO films. The YBCO epitaxial films with high transition temperatures Tc of ˜90 K have been deposited in situ only under the conditions of substrate temperatures Ts of ˜650-˜700 °C and oxygen partial pressure PO2 of ˜5×10-3-˜10×10-3 Torr, which are in close proximity to the critical stability/decomposition line for YBa2Cu3O6 in the ordinary Y-Ba-Cu-O phase diagram. Using a quadrupole mass spectrometer, a high density of atomic oxygen has directly been observed to be efficiently produced in the sputter glow discharge under the above optimum conditions of PO2. This atomic oxygen has played a key role in promoting the formation of the perovskite structure and the epitaxial growth of the YBCO films. Furthermore, Shapiro steps have successfully been observed for a Nb-YBCO point-contact junction, which is made by pressing a Nb needle on a surface-etched YBCO epitaxial film, under 525.4 GHz submillimeter-wave irradiation.

Steady State Sputtering Yields and Surface Compositions of Depleted Uranium and Uranium Carbide bombarded by 30 keV Gallium or 16 keV Cesium Ions.

Energy Technology Data Exchange (ETDEWEB)

Siekhaus, W. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Teslich, N. E. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Weber, P. K. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2014-10-23

Depleted uranium that included carbide inclusions was sputtered with 30-keV gallium ions or 16-kev cesium ions to depths much greater than the ions’ range, i.e. using steady-state sputtering. The recession of both the uranium’s and uranium carbide’s surfaces and the ion corresponding fluences were used to determine the steady-state target sputtering yields of both uranium and uranium carbide, i.e. 6.3 atoms of uranium and 2.4 units of uranium carbide eroded per gallium ion, and 9.9 uranium atoms and 3.65 units of uranium carbide eroded by cesium ions. The steady state surface composition resulting from the simultaneous gallium or cesium implantation and sputter-erosion of uranium and uranium carbide were calculated to be U₈₆Ga₁₄, (UC)₇₀Ga₃₀ and U₈₁Cs₉, (UC)₇₉Cs₂₁, respectively.

Comment on the effect of Cs on photon and secondary ion emission during sputtering

International Nuclear Information System (INIS)

Yu, M.L.

1978-01-01

The effect of Cs on photon and negative ion emission was discussed for the situations where the sputtered atom interacts either very weakly or very strongly with the target surface. The experimental data seem to favor the strong interaction case. 5 references

An evaluation of the methods of determining excited state population distributions from sputtering sources

International Nuclear Information System (INIS)

Snowdon, K.J.; Andresen, B.; Veje, E.

1978-01-01

The method of calculating relative initial level populations of excited states of sputtered atoms is developed in principle and compared with those in current use. The reason that the latter, although mathematically different, have generally led to similar population distributions is outlined. (Auth.)

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

Science.gov (United States)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

International Nuclear Information System (INIS)

Anders, Andre; Yushkov, Georgy Yu.

2009-01-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

Comparison of gate dielectric plasma damage from plasma-enhanced atomic layer deposited and magnetron sputtered TiN metal gates

Energy Technology Data Exchange (ETDEWEB)

Brennan, Christopher J.; Neumann, Christopher M.; Vitale, Steven A., E-mail: steven.vitale@ll.mit.edu [Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02420 (United States)

2015-07-28

Fully depleted silicon-on-insulator transistors were fabricated using two different metal gate deposition mechanisms to compare plasma damage effects on gate oxide quality. Devices fabricated with both plasma-enhanced atomic-layer-deposited (PE-ALD) TiN gates and magnetron plasma sputtered TiN gates showed very good electrostatics and short-channel characteristics. However, the gate oxide quality was markedly better for PE-ALD TiN. A significant reduction in interface state density was inferred from capacitance-voltage measurements as well as a 1200× reduction in gate leakage current. A high-power magnetron plasma source produces a much higher energetic ion and vacuum ultra-violet (VUV) photon flux to the wafer compared to a low-power inductively coupled PE-ALD source. The ion and VUV photons produce defect states in the bulk of the gate oxide as well as at the oxide-silicon interface, causing higher leakage and potential reliability degradation.

Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

International Nuclear Information System (INIS)

Brooks, J.N.; Ruzic, D.N.

1990-01-01

The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

Fundamental aspects of cathodic sputtering

International Nuclear Information System (INIS)

Harman, R.

1979-01-01

The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

Investigation of argon ion sputtering on the secondary electron emission from gold samples

Energy Technology Data Exchange (ETDEWEB)

Yang, Jing; Cui, Wanzhao, E-mail: cuiwanzhao@126.com; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

2016-09-30

Highlights: • An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. • After sputtering, A decrease of δmax and an increase of E1 were observed with increasing Eion. • Further sputtering at higher energies broaden the SE spectra, and the equivalent work function, ϕ, increase considerably to 12.6 eV. - Abstract: Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called “work function” (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

Investigation of argon ion sputtering on the secondary electron emission from gold samples

International Nuclear Information System (INIS)

Yang, Jing; Cui, Wanzhao; Li, Yun; Xie, Guibai; Zhang, Na; Wang, Rui; Hu, Tiancun; Zhang, Hongtai

2016-01-01

Highlights: • An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. • After sputtering, A decrease of δmax and an increase of E1 were observed with increasing Eion. • Further sputtering at higher energies broaden the SE spectra, and the equivalent work function, ϕ, increase considerably to 12.6 eV. - Abstract: Secondary electron (SE) yield, δ, is a very sensitive surface property. The values of δ often are not consistent for even identical materials. The influence of surface changes on the SE yield was investigated experimentally in this article. Argon ion sputtering was used to remove the contamination from the surface. Surface composition was monitored by X-ray photoelectron spectroscopy (XPS) and surface topography was scanned by scanning electron microscope (SEM) and atomic force microscope (AFM) before and after every sputtering. It was found that argon sputtering can remove contamination and roughen the surface. An “equivalent work function” is presented in this thesis to establish the relationship between SE yield and surface properties. Argon ion sputtering of 1.5keV leads to a significant increase of so called “work function” (from 3.7 eV to 6.0 eV), and a decrease of SE yield (from 2.01 to 1.54). These results provided a new insight into the influence of surface changes on the SE emission.

Atomic-Layer-Deposited Transparent Electrodes for Silicon Heterojunction Solar Cells

International Nuclear Information System (INIS)

Demaurex, Benedicte; Seif, Johannes P.; Smit, Sjoerd; Macco, Bart; Kessels, W. M.; Geissbuhler, Jonas; De Wolf, Stefaan; Ballif, Christophe

2014-01-01

We examine damage-free transparent-electrode deposition to fabricate high-efficiency amorphous silicon/crystalline silicon heterojunction solar cells. Such solar cells usually feature sputtered transparent electrodes, the deposition of which may damage the layers underneath. Using atomic layer deposition, we insert thin protective films between the amorphous silicon layers and sputtered contacts and investigate their effect on device operation. We find that a 20-nm-thick protective layer suffices to preserve, unchanged, the amorphous silicon layers beneath. Insertion of such protective atomic-layer-deposited layers yields slightly higher internal voltages at low carrier injection levels. However, we identify the presence of a silicon oxide layer, formed during processing, between the amorphous silicon and the atomic-layer-deposited transparent electrode that acts as a barrier, impeding hole and electron collection

Dielectric properties of DC reactive magnetron sputtered Al{sub 2}O{sub 3} thin films

Energy Technology Data Exchange (ETDEWEB)

Prasanna, S. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Mohan Rao, G. [Department of Instrumentation, Indian Institute of Science (IISc), Bangalore, 560 012 (India); Jayakumar, S., E-mail: s_jayakumar_99@yahoo.com [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore, 641 004 (India); Ganesan, V. [Low Temperature Lab, UGC-DAE Consortium for Scientific Research (CSR), Indore, 452 017 (India)

2012-01-31

Alumina (Al{sub 2}O{sub 3}) thin films were sputter deposited over well-cleaned glass and Si < 100 > substrates by DC reactive magnetron sputtering under various oxygen gas pressures and sputtering powers. The composition of the films was analyzed by X-ray photoelectron spectroscopy and an optimal O/Al atomic ratio of 1.59 was obtained at a reactive gas pressure of 0.03 Pa and sputtering power of 70 W. X-ray diffraction results revealed that the films were amorphous until 550 Degree-Sign C. The surface morphology of the films was studied using scanning electron microscopy and the as-deposited films were found to be smooth. The topography of the as-deposited and annealed films was analyzed by atomic force microscopy and a progressive increase in the rms roughness of the films from 3.2 nm to 4.53 nm was also observed with increase in the annealing temperature. Al-Al{sub 2}O{sub 3}-Al thin film capacitors were then fabricated on glass substrates to study the effect of temperature and frequency on the dielectric property of the films. Temperature coefficient of capacitance, AC conductivity and activation energy were determined and the results are discussed. - Highlights: Black-Right-Pointing-Pointer Al{sub 2}O{sub 3} thin films were deposited by DC reactive magnetron sputtering. Black-Right-Pointing-Pointer The films were found to be amorphous up to annealing temperature of 550 C. Black-Right-Pointing-Pointer An increase in rms roughness of the films was observed with annealing. Black-Right-Pointing-Pointer Al-Al{sub 2}O{sub 3}-Al thin film capacitors were fabricated and dielectric constant was 7.5. Black-Right-Pointing-Pointer The activation energy decreased with increase in frequency.

One-dimensional analysis of the rate of plasma-assisted sputter deposition

International Nuclear Information System (INIS)

Palmero, A.; Rudolph, H.; Habraken, F. H. P. M.

2007-01-01

In this article a recently developed model [A. Palmero, H. Rudolph, and F. H. P. M. Habraken, Appl. Phys. Lett. 89, 211501 (2006)] is applied to analyze the transport of sputtered material from the cathode toward the growing film when using a plasma-assisted sputtering deposition technique. The argon pressure dependence of the deposition rate of aluminum, silicon, vanadium, chromium, germanium, tantalum, and tungsten under several different experimental conditions has been analyzed by fitting experimental results from the literature to the above-mentioned theory. Good fits are obtained. Three quantities are deduced from the fit: the temperature of the cathode and of the growing film, and the value of the effective cross section for thermalization due to elastic scattering of a sputtered particle on background gas atoms. The values derived from the fits for the growing film and cathode temperature are very similar to those experimentally determined and reported in the literature. The effective cross sections have been found to be approximately the corresponding geometrical cross section divided by the average number of collisions required for the thermalization, implying that the real and effective thermalization lengths have a similar value. Finally, the values of the throw distance appearing in the Keller-Simmons model, as well as its dependence on the deposition conditions have been understood invoking the values of the cathode and film temperature, as well as of the value of the effective cross section. The analysis shows the overall validity of this model for the transport of sputtered particles in sputter deposition

Hot oxygen atoms: Their generation and chemistry

International Nuclear Information System (INIS)

Ferrieri, R.A.; Chu, Yung Y.; Wolf, A.P.

1987-01-01

Oxygen atoms with energies between 1 and 10 eV have been produced through ion beam sputtering from metal oxide targets. Argon ion beams were used on Ta 2 O 5 and V 2 O 5 . Results show that some control may be exerted over the atom's kinetic energy by changing the target. Reactions of the hot O( 3 P) with cis- and trans-butenes were investigated

Sputtering. [as deposition technique in mechanical engineering

Science.gov (United States)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Electrical properties of sputtered-indium tin oxide film contacts on n-type GaN

International Nuclear Information System (INIS)

Hwang, J. D.; Lin, C. C.; Chen, W. L.

2006-01-01

A transparent indium tin oxide (ITO) Ohmic contact on n-type gallium nitride (GaN) (dopant concentration of 2x10 17 cm -3 ) having a specific contact resistance of 4.2x10 -6 Ω cm 2 was obtained. In this study, ITO film deposition method was implemented by sputtering. We found that the barrier height, 0.68 eV, between ITO and n-type GaN is the same for both evaporated- and sputtered-ITO films. However, the 0.68 eV in barrier height renders the evaporated-ITO/n-GaN Schottky contact. This behavior is different from that of our sputtered-ITO/n-GaN, i.e., Ohmic contact. During sputtering, oxygen atoms on the GaN surface were significantly removed, thereby resulting in an improvement in contact resistance. Moreover, a large number of nitrogen (N) vacancies, caused by sputtering, were produced near the GaN surface. These N vacancies acted as donors for electrons, thus affecting a heavily doped n-type formed at the subsurface below the sputtered ITO/n-GaN. Both oxygen removal and heavy doping near the GaN surface, caused by N vacancies, in turn led to a reduction in contact resistivity as a result of electrons tunneling across the depletion layer from the ITO to the n-type GaN. All explanations are given by Auger analysis and x-ray photoelectron spectroscopy

On the phase formation of sputtered hafnium oxide and oxynitride films

International Nuclear Information System (INIS)

Sarakinos, K.; Music, D.; Mraz, S.; Baben, M. to; Jiang, K.; Nahif, F.; Braun, A.; Zilkens, C.; Schneider, J. M.; Konstantinidis, S.; Renaux, F.; Cossement, D.; Munnik, F.

2010-01-01

Hafnium oxynitride films are deposited from a Hf target employing direct current magnetron sputtering in an Ar-O 2 -N 2 atmosphere. It is shown that the presence of N 2 allows for the stabilization of the transition zone between the metallic and the compound sputtering mode enabling deposition of films at well defined conditions of target coverage by varying the O 2 partial pressure. Plasma analysis reveals that this experimental strategy facilitates control over the flux of the O - ions which are generated on the oxidized target surface and accelerated by the negative target potential toward the growing film. An arrangement that enables film growth without O - ion bombardment is also implemented. Moreover, stabilization of the transition sputtering zone and control of the O - ion flux without N 2 addition is achieved employing high power pulsed magnetron sputtering. Structural characterization of the deposited films unambiguously proves that the phase formation of hafnium oxide and hafnium oxynitride films with the crystal structure of HfO 2 is independent from the O - bombardment conditions. Experimental and theoretical data indicate that the presence of vacancies and/or the substitution of O by N atoms in the nonmetal sublattice favor the formation of the cubic and/or the tetragonal HfO 2 crystal structure at the expense of the monoclinic HfO 2 one.

Sputtering Yields of Si and Ni from the Ni1-xSix System Studied by Rutherford Backscattering Spectrometry

Science.gov (United States)

Kim, Su Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni1-xSix), including the pure materials (Ni and Si), caused by 5 keV Ar+ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni1-xSix increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni1-xSix which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

Directory of Open Access Journals (Sweden)

Marsetio Noorprajuda

2018-04-01

Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

Particle beam experiments for the analysis of reactive sputtering processes in metals and polymer surfaces

Energy Technology Data Exchange (ETDEWEB)

Corbella, Carles; Grosse-Kreul, Simon; Kreiter, Oliver; Arcos, Teresa de los; Benedikt, Jan; Keudell, Achim von [RD Plasmas with Complex Interactions, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum (Germany)

2013-10-15

A beam experiment is presented to study heterogeneous reactions relevant to plasma-surface interactions in reactive sputtering applications. Atom and ion sources are focused onto the sample to expose it to quantified beams of oxygen, nitrogen, hydrogen, noble gas ions, and metal vapor. The heterogeneous surface processes are monitored in situ by means of a quartz crystal microbalance and Fourier transform infrared spectroscopy. Two examples illustrate the capabilities of the particle beam setup: oxidation and nitriding of aluminum as a model of target poisoning during reactive magnetron sputtering, and plasma pre-treatment of polymers (PET, PP)

Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

2012-01-01

Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

Atomic structure of large angle grain boundaries determined by quantitative X-ray diffraction techniques

International Nuclear Information System (INIS)

Fitzsimmons, M.R.; Sass, S.L.

1988-01-01

Quantitative X-ray diffraction techniques have been used to determine the atomic structure of the Σ = 5 and 13 [001] twist boundaries in Au with a resolution of 0.09 Angstrom or better. The reciprocal lattices of these boundaries were mapped out using synchrotron radiation. The atomic structures were obtained by testing model structures against the intensity observations with a chi square analysis. The boundary structure were modeled using polyhedra, including octahedra, special configurations of tetrahedra and Archimedian anti-prisms, interwoven together by the boundary symmetry. The results of this work point to the possibility of obtaining general rules for grain boundary structure based on X-ray diffraction observations that give the atomic positions with high resolution

Surface roughness of sputtered ZnO films

Energy Technology Data Exchange (ETDEWEB)

Lin, Y S [Department of Materials Science and Engineering, National Dong Hwa University, 1, Sec. 2, Da Hsueh Rd. Shou-Feng, Hualien, Taiwan (China); Hsu, K C [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu, Taiwan (China); Huang, Y M [Institute of Electronics Engineering, Southern Taiwan University of Technology, 1 Nan-Tai Street, Taiwan (China)

2006-09-01

ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D{sub ts}) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D{sub ts}, root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved.

Surface roughness of sputtered ZnO films

International Nuclear Information System (INIS)

Lin, Y S; Hsu, K C; Huang, Y M

2006-01-01

ZnO films are grown on Si and glass substrates by radio-frequency (RF) magnetron sputtering. The crystalline structures are investigated by x-ray diffraction (XRD). Moreover, the roughness characteristics of the films are examined by atomic force microscopy (AFM) and field-emission scanning electron microscopy (FE-SEM). All films exhibit strong (002) preferential orientation. The influence of the RF power and target-to-substrate distance (D ts ) on the properties of ZnO is studied. Under the optimized conditions of the RF power and D ts , root-mean-square (RMS) surface roughnesses of <0.8 nm are achieved

Thermal spike model interpretation of sputtering yield data for Bi thin films irradiated by MeV {sup 84}Kr{sup 15+} ions

Energy Technology Data Exchange (ETDEWEB)

Mammeri, S. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Ouichaoui, S., E-mail: souichaoui@gmail.com [Université des Sciences et de la Technologie H. Boumediene (USTHB), Faculté de Physique, Laboratoire SNIRM, B.P. 32, El-Alia, 16111 Bab Ezzouar, Algiers (Algeria); Ammi, H. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Pineda-Vargas, C.A. [iThemba LABS, National Research Foundation, P.O. Box 722, Somerset West 7129 (South Africa); Faculty of Health and Wellness Sciences, CPUT, P.O. Box 1906, Bellville 7535 (South Africa); Dib, A. [Centre de Recherche Nucléaire d’Alger, B.P. 399, 02 Bd. Frantz Fanon, Alger-gare, Algiers (Algeria); Msimanga, M. [iThemba LABS, National Research Foundation, P. Bag 11, Wits 2050, Johannesburg (South Africa); Department of Physics, Tshwane University of Technology, P. Bag X680, Pretoria 001 (South Africa)

2015-07-01

A modified thermal spike model initially proposed to account for defect formation in metals within the high heavy ion energy regime is adapted for describing the sputtering of Bi thin films under MeV Kr ions. Surface temperature profiles for both the electronic and atomic subsystems have been carefully evaluated versus the radial distance and time with introducing appropriate values of the Bi target electronic stopping power for multi-charged Kr{sup 15+} heavy ions as well as different target physical proprieties like specific heats and thermal conductivities. Then, the total sputtering yields of the irradiated Bi thin films have been determined from a spatiotemporal integration of the local atomic evaporation rate. Besides, an expected non negligible contribution of elastic nuclear collisions to the Bi target sputtering yields and ion-induced surface effects has also been considered in our calculation. Finally, the latter thermal spike model allowed us to derive numerical sputtering yields in satisfactorily agreement with existing experimental data both over the low and high heavy ion energy regions, respectively, dominated by elastic nuclear collisions and inelastic electronic collisions, in particular with our data taken recently for Bi thin films irradiated by 27.5 MeV Kr{sup 15+} heavy ions. An overall consistency of our model calculation with the predictions of sputtering yield theoretical models within the target nuclear stopping power regime was also pointed out.

Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

CERN Document Server

Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

1999-01-01

Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

Biopolymer nanostructures induced by plasma irradiation and metal sputtering

Energy Technology Data Exchange (ETDEWEB)

Slepička, P., E-mail: petr.slepicka@vscht.cz [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Juřík, P. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic); Malinský, P.; Macková, A. [Nuclear Physics Institute, Academy of Sciences of the Czech Republic, Rez, Prague 25068 (Czech Republic); Faculty of Science, J.E. Purkyně University, Ústí nad Labem (Czech Republic); Kasálková, N. Slepičková; Švorčík, V. [Department of Solid State Engineering, Institute of Chemical Technology, 166 28 Prague (Czech Republic)

2014-08-01

Modification based on polymer surface exposure to plasma treatment exhibits an easy and cheap technique for polymer surface nanostructuring. The influence of argon plasma treatment on biopolymer poly(L-lactide acid (PLLA) will be presented in this paper. The combination of Ar{sup +} ion irradiation, consequent sputter metallization (platinum) and thermal annealing of polymer surface will be summarized. The surface morphology was studied using atomic force microscopy. The Rutherford Backscattering Spectroscopy and X-ray Photoelectron Spectroscopy were used as analytical methods. The combination of plasma treatment with consequent thermal annealing and/or metal sputtering led to the change of surface morphology and its elemental ratio. The surface roughness and composition has been strongly influenced by the modification parameters and metal layer thickness. By plasma treatment of polymer surface combined with consequent annealing or metal deposition can be prepared materials applicable both in tissue engineering as cell carriers, but also in integrated circuit manufacturing.

Quantitative atomic resolution elemental mapping via absolute-scale energy dispersive X-ray spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Chen, Z. [School of Physics and Astronomy, Monash University, Clayton, Victoria 3800 (Australia); Weyland, M. [Monash Centre for Electron Microscopy, Monash University, Clayton, Victoria 3800 (Australia); Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800 (Australia); Sang, X.; Xu, W.; Dycus, J.H.; LeBeau, J.M. [Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695 (United States); D' Alfonso, A.J.; Allen, L.J. [School of Physics, University of Melbourne, Parkville, Victoria 3010 (Australia); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Clayton, Victoria 3800 (Australia)

2016-09-15

Quantitative agreement on an absolute scale is demonstrated between experiment and simulation for two-dimensional, atomic-resolution elemental mapping via energy dispersive X-ray spectroscopy. This requires all experimental parameters to be carefully characterized. The agreement is good, but some discrepancies remain. The most likely contributing factors are identified and discussed. Previous predictions that increasing the probe forming aperture helps to suppress the channelling enhancement in the average signal are confirmed experimentally. It is emphasized that simple column-by-column analysis requires a choice of sample thickness that compromises between being thick enough to yield a good signal-to-noise ratio while being thin enough that the overwhelming majority of the EDX signal derives from the column on which the probe is placed, despite strong electron scattering effects. - Highlights: • Absolute scale quantification of 2D atomic-resolution EDX maps is demonstrated. • Factors contributing to remaining small quantitative discrepancies are identified. • Experiment confirms large probe-forming apertures suppress channelling enhancement. • The thickness range suitable for reliable column-by-column analysis is discussed.

Deposition and characterization of sputtered hexaboride coatings

International Nuclear Information System (INIS)

Waldhauser, W.

1996-06-01

Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

Effect of sputtering power on structure, adhesion strength and corrosion resistance of nitrogen doped diamond-like carbon thin films.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon (DLC:N) thin films were deposited on highly conductive p-Si substrates using a DC magnetron sputtering deposition system. The DLC:N films were characterized using X-ray photoelectron spectroscopy (XPS), micro-Raman spectroscopy, atomic force microscopy (AFM), contact angle measurement and micro-scratch test. The XPS and Raman results indicated that the sputtering power significantly influenced the properties of the films in terms of bonding configuration in the films. The corrosion performance of the DLC:N films was investigated in a 0.6 M NaCl solution by means of potentiodynamic polarization testing. It was found that the corrosion performance of the films could be enhanced by higher sputtering powers.

Redeposition of sputtered material in a glow-discharge lamp measured by means of an ion microprobe mass analyser

International Nuclear Information System (INIS)

Ferreira, N.P.; Bueger, P.A.

1978-01-01

The redeposition of sputtered material on the target in a Grimm-type glow-discharge lamp was studied by means of an ion microprobe mass analyser (IMMA) using 16 O 2 + ions as bombarding species. The target was an aluminium disc with a cylindrical copper insertion, one mm in diameter. The lamp was operated at currents of 50 mA and 100 mA and a voltage of 1200 V. It is estimated that 17% of the copper atoms sputtered are redeposited and may be resputtered. (orig.) [de

Co-sputtered amorphous Nb–Ta, Nb–Zr and Ta–Zr coatings for corrosion protection of cyclotron targets for [{sup 18}F] production

Energy Technology Data Exchange (ETDEWEB)

Skliarova, Hanna, E-mail: Hanna.Skliarova@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Ferrara, Ferrara (Italy); Azzolini, Oscar, E-mail: Oscar.Azzolini@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); Johnson, Richard R., E-mail: richard.johnson@teambest.com [BEST Cyclotron Systems Inc., 8765 Ash Street Unit 7, Vancouver, BC V6P 6T3 (Canada); Palmieri, Vincenzo, E-mail: Vincenzo.Palmieri@lnl.infn.it [National Institute of Nuclear Physics, Legnaro National Laboratories, Viale dell’Università, 2, 35020 Legnaro, Padua (Italy); University of Padua, Padua (Italy)

2015-08-05

Highlights: • Nb–Ta, Nb–Zr and Ta–Zr alloy films were deposited by co-sputtering. • Co-sputtered Nb–Zr and Nb–Ta alloy coatings had crystalline microstructures. • Diffusion barrier efficiency of Nb–Zr and Nb–Ta decreased with the increase of Nb %. • Co-sputtered Ta–Zr films with 30–73 at.% Ta were amorphous. • Sputtered amorphous Ta–Zr films showed superior diffusion barrier efficiency. - Abstract: Protective corrosion resistant coatings serve for decreasing the amount of ionic contaminants from Havar® entrance foils of the targets for [{sup 18}F] production. The corrosion damage of coated entrance foils is caused mainly by the diffusion of highly reactive products of water radiolysis through the protective film toward Havar® substrate. Since amorphous metal alloys (metallic glasses) are well-known to perform a high corrosion resistance, the glass forming ability, microstructure and diffusion barrier efficiency of binary alloys containing chemically inert Nb, Ta, Zr were investigated. Nb–Ta, Nb–Zr and Ta–Zr films of different alloy composition and ∼1.5 μm thickness were co-deposited by magnetron sputtering. Diffusion barrier efficiency tests used reactive aluminum underlayer and protons of acid solution and gallium atoms at elevated temperature as diffusing particles. Though co-sputtered Nb–Ta and Nb–Zr alloy films of different contents were crystalline, Ta–Zr alloy was found to form dense amorphous microstructures in a range of composition with 30–73% atomic Ta. The diffusion barrier efficiency of Nb–Zr and Nb–Ta alloy coatings decreased with increase of Nb content. The diffusion barrier efficiency of sputtered Ta–Zr alloy coatings increased with the transition from nanocrystalline columnar microstructure to amorphous for coatings with 30–73 at.% Ta.

ZnO film deposition by DC magnetron sputtering: Effect of target configuration on the film properties

Energy Technology Data Exchange (ETDEWEB)

Arakelova, E.; Khachatryan, A.; Kteyan, A.; Avjyan, K.; Grigoryan, S.

2016-08-01

Ballistic transport model for target-to-substrate atom transfer during magnetron sputter deposition was used to develop zinc target (cathode) configuration that enabled growth of uniform zinc oxide films on extensive surfaces and provided reproducibility of films characteristics irrespective of the cathode wear-out. The advantage of the developed target configuration for high-quality ZnO film deposition was observed in the sputtering pressure range of 5− 50 mTorr, and in the range of cathode-to-substrate distances 7–20 cm. Characteristics of the deposited films were demonstrated by using X-ray diffraction analysis, as well as optical and electrical measurements. - Highlights: • Change of target configuration for optimization of magnetron sputtering deposition is proposed. • Improvement of ZnO film properties due to use of this target is demonstrated. • This configuration provided reproducibility of the deposited films properties.

Structural and morphological evolution in magnetron co-sputtered (Zn, Cr)O films

International Nuclear Information System (INIS)

Hu, Y M; Chiou, J W; Han, T C; Chen, Y T; Hsu, C W; Chen, G J; Chou, W Y; Chang, J; Hsu, J Y; Yu, Y C

2008-01-01

In this study, x-ray diffraction, scanning electron microscopy, micro-Raman spectroscopy, x-ray absorption near-edge structure and particle-induced x-ray emission are used to characterize the microstructure of (Zn, Cr)O films prepared using a co-sputtering method. We found that the Cr ions did not substitute for the Zn sites but instead formed Cr nano-particles and secondary oxide phases (SOPs) of Cr 2 O 3 and/or ZnCr 2 O 4 in co-sputtered Zn 1-x Cr x O films with Cr content x ≥ 0.1. Evidence is presented for the evolution of SOPs formed in (Zn, Cr)O films with increasing Cr sputtering power. Based on the inspection of the Cr and Zn contents in (Zn, Cr)O films, we conclude that the formation of the Cr 2 O 3 phase is driven by a substantial increase in the atomic ratio of Cr/Zn, followed by the formation of a ZnCr 2 O 4 phase promoted by a higher content of Cr than of Zn in film with increasing Cr sputtering power. It seems that a strong preference of Cr for octahedral rather than tetrahedral coordination with oxygen would trigger the formation of SOPs rather than the substitution of Cr into Zn sites and could be an obstacle for achieving a real Cr-substituted ZnO dilute magnetic oxide.

Particle-balance models for pulsed sputtering magnetrons

Science.gov (United States)

Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

2017-09-01

The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

Development of the sputter coater for hotcell

Energy Technology Data Exchange (ETDEWEB)

Chun, Yong Bum; Kwon, H. M.; Chun, Y. B.; Yang, Y. S.; Joo, J. S.; Jang, N. M

2007-05-15

In last december, the Wavelength Dispersive Spectroscopy (WDS) was installed on the shielded SEM of PIEF, KAERI. Before the first major WDS analysis service at the end of 2007, one among the prior technologies, the hot-cell sputter coater was remodelled from a commercial product and set up inside the glove box. This report describes effects of a coating layer on quantitative analysis, the remodelling of a coater suited to hot-cell, and the performance test of the remodelled coater. Also, written in 1998 was revised and appended to the report.

The theory of development of surface morphology by sputter erosion processes

International Nuclear Information System (INIS)

Carter, G.; Nobes, M.J.

1984-01-01

When a surface is bombarded by an energetic ion flux a rich variety of surface structures are observed to develop at the atomic, microscopic and macroscopic scales. Such structures include elevated, with respect to the surrounding surface, features such as mesas or plateaux, ridges, cones and pyramids and depressed features such as etch pits and cavities. These elementary features may be isolated or in profusion and frequently repetitive patterns of coordinated pyramidal structures, etch pits, surface ledges or facets and ripple or wave-like structures occur. The majority of the features arise rather directly from the erosion action of the sputtering process, particularly from differential erosion processes at different surface localities. The authors outline a general approach to sputter erosion induced surface morphology development based on the concept of the surface as an advancing wave. (Auth.)

Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

International Nuclear Information System (INIS)

Insepov, Z.; Norem, J.; Veitzer, S.

2010-01-01

Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

Production of atomic negative ion beams of the Group IA elements

International Nuclear Information System (INIS)

Alton, G.D.; Mills, G.D.

1988-01-01

A method has been developed which enables the direct sputter generation of atomic negative ion beams of all members of the Group IA elements (Li, Na, K, Rb, and Cs). The method consists of the use of sputter samples formed by pressing mixtures of the carbonates of the Group IA elements and 10% (atomic) Cu, Ag, or other metal powder. The following intensities are typical of those observed from carbonate samples subjected to /approximately/3 KeV cesium ion bombardment: Li - : ≥0.5 μA; Na - : ≥0.5 μA; K - : ≥0.5 μA; Rb - : ≥0.5 μA; Cs - : ≥0.2 μA. 7 refs., 2 figs., 1 tab

Fractal features of CdTe thin films grown by RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Hosseinpanahi, Fayegh, E-mail: f.hosseinpanahi@yahoo.com [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Raoufi, Davood [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of); Ranjbarghanei, Khadijeh [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Karimi, Bayan [Department of Physics, Payame Noor University, P.O. Box 19395-4697, Tehran (Iran, Islamic Republic of); Babaei, Reza [Department of Physics, Plasma Physics Research Center, Science & Research Branch Islamic Azad University, Tehran (Iran, Islamic Republic of); Hasani, Ebrahim [Department of Physics, University of Bu Ali Sina, P.O. Box 65174, Hamedan (Iran, Islamic Republic of)

2015-12-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Fractal features of CdTe thin films grown by RF magnetron sputtering

International Nuclear Information System (INIS)

Hosseinpanahi, Fayegh; Raoufi, Davood; Ranjbarghanei, Khadijeh; Karimi, Bayan; Babaei, Reza; Hasani, Ebrahim

2015-01-01

Graphical abstract: - Highlights: • CdTe thin films were deposited on glass substrates by RF magnetron sputtering at room temperature with different deposition time 5, 10 and 15 min. • Nanostructure of CdTe layer indicates that CdTe films are polycrystalline and have zinc blende structure, irrespective of their deposition time. • Complexity and roughness of the CdTe films and strength of multifractality increase with increasing deposition time. • Detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe films have multifractal nature. - Abstract: Cadmium telluride (CdTe) thin films were prepared by RF magnetron sputtering on glass substrates at room temperature (RT). The film deposition was performed for 5, 10, and 15 min at power of 30 W with a frequency of 13.56 MHz. The crystal structure of the prepared CdTe thin films was studied by X-ray diffraction (XRD) technique. XRD analyses indicate that the CdTe films are polycrystalline, having zinc blende structure of CdTe irrespective of their deposition time. All CdTe films showed a preferred orientation along (1 1 1) crystalline plane. The surface morphology characterization of the films was studied using atomic force microscopy (AFM). The quantitative AFM characterization shows that the RMS surface roughness of the prepared CdTe thin films increases with increasing the deposition time. The detrended fluctuation analysis (DFA) and also multifractal detrended fluctuation analysis (MFDFA) methods showed that prepared CdTe thin films have multifractal nature. The complexity, roughness of the CdTe thin films and strength of the multifractality increase as deposition time increases.

Intrinsic anomalous surface roughening of TiN films deposited by reactive sputtering

International Nuclear Information System (INIS)

Auger, M. A.; Vazquez, L.; Sanchez, O.; Cuerno, R.; Castro, M.; Jergel, M.

2006-01-01

We study surface kinetic roughening of TiN films grown on Si(100) substrates by dc reactive sputtering. The surface morphology of films deposited for different growth times under the same experimental conditions were analyzed by atomic force microscopy. The TiN films exhibit intrinsic anomalous scaling and multiscaling. The film kinetic roughening is characterized by a set of local exponent values α loc =1.0 and β loc =0.39, and global exponent values α=1.7 and β=0.67, with a coarsening exponent of 1/z=0.39. These properties are correlated to the local height-difference distribution function obeying power-law statistics. We associate this intrinsic anomalous scaling with the instability due to nonlocal shadowing effects that take place during thin-film growth by sputtering

Reactive magnetron sputtering of Si-C-N films with controlled mechanical and optical properties

Czech Academy of Sciences Publication Activity Database

Vlček, J.; Kormunda, M.; Čížek, J.; Soukup, Z.; Peřina, Vratislav; Zemek, Josef

2003-01-01

Roč. 12, č. 8 (2003), s. 1287-1294 ISSN 0925-9635 R&D Projects: GA MŠk ME 203; GA MŠk OC 527.90 Institutional research plan: CEZ:MSM 235200002 Keywords : silicon-carbon-nitride films * magnetron co-sputtering Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.867, year: 2003

Underlying role of mechanical rigidity and topological constraints in physical sputtering and reactive ion etching of amorphous materials

Science.gov (United States)

Bhattarai, Gyanendra; Dhungana, Shailesh; Nordell, Bradley J.; Caruso, Anthony N.; Paquette, Michelle M.; Lanford, William A.; King, Sean W.

2018-05-01

Analytical expressions describing ion-induced sputter or etch processes generally relate the sputter yield to the surface atomic binding energy (Usb) for the target material. While straightforward to measure for the crystalline elemental solids, Usb is more complicated to establish for amorphous and multielement materials due to composition-driven variations and incongruent sublimation. In this regard, we show that for amorphous multielement materials, the ion-driven yield can instead be better understood via a consideration of mechanical rigidity and network topology. We first demonstrate a direct relationship between Usb, bulk modulus, and ion sputter yield for the elements, and then subsequently prove our hypothesis for amorphous multielement compounds by demonstrating that the same relationships exist between the reactive ion etch (RIE) rate and nanoindentation Young's modulus for a series of a -Si Nx :H and a -Si OxCy :H thin films. The impact of network topology is further revealed via application of the Phillips-Thorpe theory of topological constraints, which directly relates the Young's modulus to the mean atomic coordination () for an amorphous solid. The combined analysis allows the trends and plateaus in the RIE rate to be ultimately reinterpreted in terms of the atomic structure of the target material through a consideration of . These findings establish the important underlying role of mechanical rigidity and network topology in ion-solid interactions and provide additional considerations for the design and optimization of radiation-hard materials in nuclear and outer space environments.

Thin films preparation of the Ti-Al-O system by rf-sputtering;Preparacion de peliculas delgadas del sistema Ti-Al-O mediante rf-sputtering

Energy Technology Data Exchange (ETDEWEB)

Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J. [IPN, Centro de Investigacion en Ciencia Aplicada y Tecnologia Avanzada, Unidad Altamira, Km 14.5 Carretera Tampico-Puerto Industrial Altamira, 89600 Altamira, Tamaulipas (Mexico); Manaud, J. P.; Lahaye, M. [Centre National de la Recherche Scientifique, Institut de Chimie de la Matiere Condensee, Universite Bordeaux I, 87, Av. du Dr. Schweitzer, F-33608 Pessac-Cedex (France); Munoz S, J., E-mail: jmontedeocacv@ipn.m [IPN, Centro de Investigacion y de Estudios Avanzados, Unidad Queretaro, Libramiento Norponiente No. 2000, Fracc. Real de Juriquilla, 76230 Santiago de Queretaro, Qro. (Mexico)

2010-07-01

In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti{sub 3}Al targets in a sputtering chamber with an Ar-O{sub 2} atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

Microstructure of thin film platinum electrodes on yttrium stabilized zirconia prepared by sputter deposition

Energy Technology Data Exchange (ETDEWEB)

Toghan, Arafat, E-mail: arafat.toghan@pci.uni-hannover.de [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany); Khodari, M. [Chemistry Department, Faculty of Science, South Valley University, Qena, 83523 (Egypt); Steinbach, F.; Imbihl, R. [Institute of Physical Chemistry and Electrochemistry, Leibniz University of Hannover, Callinstrasse 3-3a, D-30167 Hannover (Germany)

2011-09-01

(111) oriented thin film Pt electrodes were prepared on single crystals of yttrium-stabilized zirconia (YSZ) by sputter deposition of platinum. The electrodes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), selected area electron diffraction (SAED), X-ray diffraction (XRD), energy-dispersive X-ray analysis (EDX), atomic force microscopy (AFM) and by profilometry. SEM images of the as-sputtered platinum film show a compact amorphous Pt film covering uniformly the substrate. Upon annealing at 1123 K, gaps and pores at the interface develop leading to a partial dewetting of the Pt film. Increasing the annealing temperature to 1373 K transforms the polycrystalline Pt film into single crystalline grains exhibiting a (111) orientation towards the substrate.

Atomic probes of surface structure and dynamics

International Nuclear Information System (INIS)

Heller, E.J.; Jonsson, H.

1992-01-01

Progress for the period Sept. 15, 1992 to Sept. 14, 1993 is discussed. Semiclassical methods that will allow much faster and more accurate three-dimensional atom--surface scattering calculations, both elastic and inelastic, are being developed. The scattering of He atoms from buckyballs is being investigated as a test problem. Somewhat more detail is given on studies of He atom scattering from defective Pt surfaces. Molecular dynamics simulations of He + and Ar + ion sputtering of Pt surfaces are also being done. He atom scattering from Xe overlayers on metal surfaces and the thermalized dissociation of H 2 on Cu(110) are being studied. (R.W.R.) 64 refs

Solar wind sputtering of small bodies: Exospheres of Phobos and Deimos

Science.gov (United States)

Schaible, M. J.; Johnson, R. E.; Lee, P.; Benna, M.; Elphic, R. C.

2014-12-01

Solar wind, magnetospheric ions and micrometeorites impact the surface of airless bodies in the solar system and deposit energy in the surface material. Excitation and momentum transfer processes lead to sputtering or desorption of molecules and atoms, thereby creating a dynamic exosphere about an otherwise airless body. Ion mass spectrometry of ejected materials provides a highly sensitive method for detecting sputter products and determining the surface composition [Johnson and Baragiola, 1991; Elphic et al., 1991]. Though most of the material is sputtered as neutral gas, UV photons can ionize ejected neutrals and a small fraction of the ejecta leaves the surface in an ionized state. However, ions are deflected by the variably-oriented solar wind magnetic field and thus relating their detection to a surface location can be problematic. Here we estimate the average ion density close to the surface of Phobos or Deimos to predict whether modern mass spectrometry instruments [Mahaffey et al. 2014] would be able to obtain sufficient compositional information to place constraints on their origin. The open source Monte Carlo program SRIM.SR was used to simulate the effect of ions incident onto a surface representing several different meteorite compositions and gave estimates of the damage and sputtering effects. As much of the empirical data supporting SRIM results comes from sputtering of metallic and organic molecular targets which can differ greatly from materials that make up planetary surfaces, measurements of cohesive energies and enthalpies of formation were used to estimate the surface binding energies for minerals, though these can vary significantly depending on the chemical composition. Since these properties affect the sputtering yield, comparisons of simulations with laboratory measurements were made to test the validity of our estimates. Using the validated results and a constant fraction to estimate ion yields, the density of ejected ions and neutrals vs

Synthesis and characterization of CdTe nanostructures grown by RF magnetron sputtering method

Science.gov (United States)

Akbarnejad, Elaheh; Ghoranneviss, Mahmood; Hantehzadeh, Mohammad Reza

2017-08-01

In this paper, we synthesize Cadmium Telluride nanostructures by radio frequency (RF) magnetron sputtering system on soda lime glass at various thicknesses. The effect of CdTe nanostructures thickness on crystalline, optical and morphological properties has been studied by means of X-ray diffraction (XRD), UV-VIS-NIR spectrophotometry, field emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM), respectively. The XRD parameters of CdTe nanostructures such as microstrain, dislocation density, and crystal size have been examined. From XRD analysis, it could be assumed that increasing deposition time caused the formation of the wurtzite hexagonal structure of the sputtered films. Optical properties of the grown nanostructures as a function of film thickness have been observed. All the films indicate more than 60% transmission over a wide range of wavelengths. The optical band gap values of the films have obtained in the range of 1.62-1.45 eV. The results indicate that an RF sputtering method succeeded in depositing of CdTe nanostructures with high purity and controllable physical properties, which is appropriate for photovoltaic and nuclear detector applications.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Science.gov (United States)

Ojima, T.; Tainosho, T.; Sharmin, S.; Yanagihara, H.

2018-04-01

Real-time in situ reflection high energy electron diffraction (RHEED) observations of Fe3O4, γ-Fe2O3, and (Co,Fe)3O4 films on MgO(001) substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) experiments. This suggests that the layer-by-layer growth of spinel ferrite (001) films is general in most physical vapor deposition (PVD) processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

RHEED oscillations in spinel ferrite epitaxial films grown by conventional planar magnetron sputtering

Directory of Open Access Journals (Sweden)

T. Ojima

2018-04-01

Full Text Available Real-time in situ reflection high energy electron diffraction (RHEED observations of Fe3O4, γ-Fe2O3, and (Co,Fe3O4 films on MgO(001 substrates grown by a conventional planar magnetron sputtering was studied. The change in periodical intensity of the specular reflection spot in the RHEED images of three different spinel ferrite compounds grown by two different sputtering systems was examined. The oscillation period was found to correspond to the 1/4 unit cell of each spinel ferrite, similar to that observed in molecular beam epitaxy (MBE and pulsed laser deposition (PLD experiments. This suggests that the layer-by-layer growth of spinel ferrite (001 films is general in most physical vapor deposition (PVD processes. The surfaces of the films were as flat as the surface of the substrate, consistent with the observed layer-by-layer growth process. The observed RHEED oscillation indicates that even a conventional sputtering method can be used to control film thickness during atomic layer depositions.

Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

Science.gov (United States)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-11-01

O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

Ion beam sputter implantation method

International Nuclear Information System (INIS)

King, W.J.

1978-01-01

By means of ion beam atomizing or sputtering an integrally composed coating, the composition of which continuously changes from 100% of the substrate to 100% of the coating, can be surfaced on a substrate (e.g. molten quartz on plastic lenses). In order to do this in the facility there is directed a primary beam of accelerated noble gas ions on a target from the group of the following materials: SiO 2 , Al 2 O 3 , Corning Glass 7070, Corning Glass 7740 or borosilicate glass. The particles leaving the target are directed on the substrate by means of an acceleration potential of up to 10 KV. There may, however, be coated also metal layers (Ni, Co) on a mylar film resulting in a semireflecting metal film. (RW) [de

Sputtering of octatetraene by 15 keV C{sub 60} projectiles: Comparison of reactive interatomic potentials

Energy Technology Data Exchange (ETDEWEB)

Kanski, Michal; Maciazek, Dawid; Golunski, Mikolaj; Postawa, Zbigniew, E-mail: zbigniew.postawa@uj.edu.pl

2017-02-15

Highlights: • Probing the effect of interatomic potentials on sputtering of an octatetraene sample. • Problems with charge calculations are observed during cluster impact for ReaxFF. • COMB3 leads to a very low sputtering yield due to abrupt energy dissipation. • AIREBO is computationally the most efficient, while ReaxFF is more accurate. - Abstract: Molecular dynamics computer simulations have been used to probe the effect of the AIREBO, ReaxFF and COMB3 interatomic potentials on sputtering of an organic sample composed of octatetraene molecules. The system is bombarded by a 15 keV C{sub 60} projectile at normal incidence. The effect of the applied force fields on the total time of simulation, the calculated sputtering yield and the angular distribution of sputtered particles is investigated and discussed. It has been found that caution should be taken when simulating particles ejection from nonhomogeneous systems that undergo significant fragmentation described by the ReaxFF. In this case, the charge state of many particles is improper due to an inadequacy of a procedure used for calculating partial charges on atoms in molecules for conditions present during sputtering. A two-step simulation procedure is proposed to minimize the effect of this deficiency. There is also a possible problem with the COMB3 potential, at least at conditions present during cluster impact, as its results are very different from AIREBO or ReaxFF.

Ripples and ripples: from sandy deserts to ion-sputtered surfaces

International Nuclear Information System (INIS)

Aste, T; Valbusa, U

2005-01-01

We study the morphological evolution of surfaces during ion sputtering and we compare their dynamical corrugation with aeolian ripple formation in sandy deserts. We show that, although the two phenomena are physically different, they must obey similar geometrical constraints and therefore they can be described within the same theoretical framework. The present theory distinguishes between atoms that stay bounded in the bulk and others that are mobile on the surface. We describe the excavation mechanisms, the adsorption and the surface mobility by means of a continuous equation derived from the study of dune formation on sand. We explore the spontaneous development of ordered nanostructures and explain the different dynamical behaviours experimentally observed in metals or in semiconductors or in amorphous systems. We also show that this novel approach can describe the occurrence of rotation in the ripple direction and the formation of other kinds of self-organized patterns induced by changes in the sputtering incidence angle

Determination of Calcium in Cereal with Flame Atomic Absorption Spectroscopy: An Experiment for a Quantitative Methods of Analysis Course

Science.gov (United States)

Bazzi, Ali; Kreuz, Bette; Fischer, Jeffrey

2004-01-01

An experiment for determination of calcium in cereal using two-increment standard addition method in conjunction with flame atomic absorption spectroscopy (FAAS) is demonstrated. The experiment is intended to introduce students to the principles of atomic absorption spectroscopy giving them hands on experience using quantitative methods of…

Quantitative measurement of solvation shells using frequency modulated atomic force microscopy

Science.gov (United States)

Uchihashi, T.; Higgins, M.; Nakayama, Y.; Sader, J. E.; Jarvis, S. P.

2005-03-01

The nanoscale specificity of interaction measurements and additional imaging capability of the atomic force microscope make it an ideal technique for measuring solvation shells in a variety of liquids next to a range of materials. Unfortunately, the widespread use of atomic force microscopy for the measurement of solvation shells has been limited by uncertainties over the dimensions, composition and durability of the tip during the measurements, and problems associated with quantitative force calibration of the most sensitive dynamic measurement techniques. We address both these issues by the combined use of carbon nanotube high aspect ratio probes and quantifying the highly sensitive frequency modulation (FM) detection technique using a recently developed analytical method. Due to the excellent reproducibility of the measurement technique, additional information regarding solvation shell size as a function of proximity to the surface has been obtained for two very different liquids. Further, it has been possible to identify differences between chemical and geometrical effects in the chosen systems.

Sputtering of water ice

DEFF Research Database (Denmark)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

Development of quantitative atomic modeling for tungsten transport study Using LHD plasma with tungsten pellet injection

International Nuclear Information System (INIS)

Murakami, I.; Sakaue, H.A.; Suzuki, C.; Kato, D.; Goto, M.; Tamura, N.; Sudo, S.; Morita, S.

2014-10-01

Quantitative tungsten study with reliable atomic modeling is important for successful achievement of ITER and fusion reactors. We have developed tungsten atomic modeling for understanding the tungsten behavior in fusion plasmas. The modeling is applied to the analysis of tungsten spectra observed from currentless plasmas of the Large Helical Device (LHD) with tungsten pellet injection. We found that extreme ultraviolet (EUV) lines of W 24+ to W 33+ ions are very sensitive to electron temperature (Te) and useful to examine the tungsten behavior in edge plasmas. Based on the first quantitative analysis of measured spatial profile of W 44+ ion, the tungsten concentration is determined to be n(W 44+ )/n e = 1.4x10 -4 and the total radiation loss is estimated as ∼4 MW, of which the value is roughly half the total NBI power. (author)

Quantitative Auger analysis of Nb-Ge superconducting alloys

International Nuclear Information System (INIS)

Buitrago, R.H.

1980-01-01

The feasibility of using Auger electron analysis for quantitative analysis was investigated by studying Nb 3 Ge thin-film Auger data with different approaches. A method base on elemental standards gave consistent quantitative values with reported Nb-Ge data. Alloy sputter yields were also calculated and results were consistent with those for pure elements

Sensitivity of ion-induced sputtering to the radial distribution of energy transfers: A molecular dynamics study

International Nuclear Information System (INIS)

Mookerjee, S.; Khan, S. A.; Roy, A.; Beuve, M.; Toulemonde, M.

2008-01-01

Using different models for the deposition of energy on the lattice and a classical molecular dynamics approach to the subsequent transport, we evaluate how the details of the energy deposition model influence sputtering yield from a Lennard-Jones target irradiated with a MeV/u ion beam. Two energy deposition models are considered: a uniform, instantaneous deposition into a cylinder of fixed radius around the projectile ion track, used in earlier molecular dynamics and fluid dynamics simulations of sputtering yields; and an energy deposition distributed in time and space based on the formalism developed in the thermal spike model. The dependence of the sputtering yield on the total energy deposited on the target atoms is very sensitive to the energy deposition model. To clarify the origin of this strong dependence, we explore the role of the radial expansion of the electronic system prior to the transfer of its energy to the lattice. The results imply that observables such as the sputtering yield may be used as signatures of the fast electron-lattice energy transfer in the electronic energy-loss regime, and indicate the need for more experimental and theoretical investigations of these processes

Deposition of lead-silicate glassy thin coatings by RF magnetron sputtering: Correlation between deposition parameters and electrical and structural properties

International Nuclear Information System (INIS)

Rigato, V.; Maggioni, G.; Boscarino, D.; Della Mea, G.; Univ. di Trento, Mesiano

1996-01-01

Lead-silicate glassy thin films produced by means of Reactive Radio Frequency Magnetron Sputtering have found recent application in the development of MicroStrip Gas Chambers radiation detectors. Here, thin films (100--400 nm) of lead silicate glass have been deposited by RF magnetron sputtering in Ar plasma at different discharge conditions. The interaction of the sputtered species with the gas atoms during the transport process through the discharge region and the kinetics of growth of the films have been investigated as a function of the target composition and of the substrate temperature. This study demonstrates the possibility of controlling the surface electrical resistance of the films in a wide range of values ranging from 10 12 to 10 17 Ω/□ during the film growth

Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

International Nuclear Information System (INIS)

Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

2017-01-01

O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

Characteristics of growth of complex ferroelectric oxide films by plasma-ion sputtering

Science.gov (United States)

Mukhortov, V. M.; Golovko, Yu. I.; Mukhortov, Vl. M.; Dudkevich, V. P.

1981-02-01

An experimental investigation was made of the process of growth of a complex oxide film, such as BaTiO3 or (Ba, Sr)TiO3, by plasma-ion sputtering. It was found that ion bombardment of a ceramic target knocked out neutral excited atoms. These atoms lost energy away from the target by collisions and at a certain critical distance hcr they were capable of oxidation to produce BaO, TiO, TiO2, and SrO. Therefore, depending on the distance between the cathode and the substrate, the “construction” material arrived in the form of atoms or molecules of simple oxides. These two (atomic and molecular) deposition mechanisms corresponded to two mechanisms of synthesis and crystallization differing in respect of the dependences of the growth rate, unit cell parameters, and other structural properties on the deposition temperature. The role of re-evaporation and of oxidation-reduction processes was analyzed.

Heteroepitaxial growth of CuInS2 thin films on sapphire by radio frequency reactive sputtering

International Nuclear Information System (INIS)

He, Y.B.; Kriegseis, W.; Meyer, B.K.; Polity, A.; Serafin, M.

2003-01-01

Direct heteroepitaxial growth of uniform stoichiometric CuInS 2 (CIS) thin films on sapphire (0001) substrates has been achieved by radio frequency reactive sputtering. X-ray ω-2θ scans reveal that the sputtered layers grow in a (112) orientation with a chalcopyrite structure. A rocking curve full width at half maximum of about 0.05 deg. (180 arc sec) for the (112) peak demonstrates a nearly perfect out-of-plane arrangement of CIS (112) parallel sapphire (0001). X-ray diffraction Phi scans further illustrate an excellent in-plane ordering of CIS [1-bar10] parallel sapphire (101-bar0). The sputtered thin CIS epilayers had a smooth surface with a typical root-mean-square roughness of about 3.3 nm as evaluated by atomic force microscopy. The epitaxial growth of tetragonal CIS on hexagonal sapphire provides evidence that heteroepitaxial growth may be realized between structures of different symmetry, such as films of cubic or tetragonal structures on hexagonal substrates or vice versa

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

Sputtering of molybdenum and tungsten nano rods and nodules irradiated with 150 eV argon ions

International Nuclear Information System (INIS)

Ghoniem, N.M.; Sehirlioglu, Alp; Neff, Anton L.; Allain, Jean-Paul; Williams, Brian; Sharghi-Moshtaghin, Reza

2015-01-01

Highlights: • The work was motivated by the idea of designing material surface architecture, using the CVD process, that can result in a reduction in the surface sputtering rate as compared to planar surfaces. • We present an experimental investigation of the effects of low energy (150 eV) Ar ions on surface sputtering, amorphization of near-surface layers, and the formation of surface ripples in Mo and W nano-rods and nano-nodules at room temperature. • We show that the sputtering rate decreases in all nano-architecture surfaces as compared to planar surfaces. • We discovered that energy deposition in the near surface layer in W leads to its amorphization at room temperature, to a depth of 5–10 nm. • We also show that surfaces of nano rods become rippled as a result of an ion-induced roughening instability. - Abstract: The influence of surface nano architecture on the sputtering and erosion of tungsten and molybdenum is discussed. We present an experimental investigation of the effects of low energy (150 eV) Ar ions on surface sputtering in Mo and W nano-rods and nano-nodules at room temperature. Measurements of the sputtering rate from Mo and W surfaces with nano architecture indicate that the surface topology plays an important role in the mechanism of surface erosion and restructuring. Chemical vapor deposition (CVD) is utilized as a material processing route to fabricate nano-architectures on the surfaces of W and Mo substrates. First, Re dendrites form as needles with cross-sections that have hexagonal symmetry, and are subsequently employed as scaffolding for further deposition of W and Mo to create nano rod surface architecture. The sputtering of surface atoms in these samples shows a marked dependence on their surface architecture. The sputtering rate is shown to decrease at normal ion incidence in all nano-architecture surfaces as compared to planar surfaces. Moreover, and unlike an increase in sputtering of planar crystalline surfaces, the

Low-Damage Sputter Deposition on Graphene

Science.gov (United States)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Microstructure and tri biological properties of sputtered NbTex thin films

International Nuclear Information System (INIS)

Kassem, M.; Langlade, C.; Fayeulle, S.; Mathy, Y.; Pailharey, D.

1997-01-01

Thin NbTex films were deposited on steel by sputtering. Annealing was performed at several temperatures. Phase transition phenomena were analysed by X-ray diffraction (0-20 and grazing incidence). Depending on the conditions (Sputtering and annealing) the structure of the films changed from the NbTe2 (Two-dimensional) to the Nb3Te4 (Three-dimensional with linear channels) structural type and the intercalation of Te of Nb atoms within the parent structures was suggested. Films were evaluated under fretting conditions at 1 Hz in a dry environment. The displacement was ± 50 μ m and the contact pressure was 300 MPa. Friction coefficients were low, ranging from 0.08 to 0.18 depending on the film structure. The classical dependence of friction coefficient on pressure, well known for solid lubricants, was observed for NbTe2. Thickness and annealing temperature were shown to have a major effect of endurance. (author). 21 Refs., 7 Figs

Final Report: Mechanisms of sputter ripple formation: coupling among energetic ions, surface kinetics, stress and composition

Energy Technology Data Exchange (ETDEWEB)

Chason, Eric; Shenoy, Vivek

2013-01-22

Self-organized pattern formation enables the creation of nanoscale surface structures over large areas based on fundamental physical processes rather than an applied template. Low energy ion bombardment is one such method that induces the spontaneous formation of a wide variety of interesting morphological features (e.g., sputter ripples and/or quantum dots). This program focused on the processes controlling sputter ripple formation and the kinetics controlling the evolution of surfaces and nanostructures in high flux environments. This was done by using systematic, quantitative experiments to measure ripple formation under a variety of processing conditions coupled with modeling to interpret the results.

Sputtering yields of Si and Ni from the I sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

International Nuclear Information System (INIS)

Kim, Su-Chol; Yamaguchi, Satoru; Kataoka, Yoshihide; Iwami, Motohiro; Hiraki, Akio; Satou, Mamoru; Fujimoto, Fuminori.

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar + ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi 2 to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy. (author)

Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

2016-03-01

Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

Thin films preparation of the Ti-Al-O system by rf-sputtering

International Nuclear Information System (INIS)

Montes de Oca, J. A.; Ceballos A, J.; Galaviz P, J.; Manaud, J. P.; Lahaye, M.; Munoz S, J.

2010-01-01

In the present work Ti-Al-O thin films were synthesized by rf-sputtering technique on glass and silicon (Si) substrates using Ti Al and Ti 3 Al targets in a sputtering chamber with an Ar-O 2 atmosphere. Ti-Al-O thin films were obtained varying experimental parameters such as oxygen percent fed to the reaction chamber, plasma power density and substrate temperature. The films deposited on glass substrates were used to evaluate their optical properties, while those deposited on Si substrates were used to evaluate mechanical and morphological properties. The crystalline structure, morphology, chemical composition and optical properties of the films were evaluated by X-ray diffraction, high-resolution scanning electron microscopy, Auger electron microscopy and visible UV spectroscopy. Films thicknesses were measured using a profiler. The roughness and mechanical properties such as hardness and Young modulus were analyzed by atomic force microscopy and nano indentation technique, respectively. (Author)

Composite materials obtained by the ion-plasma sputtering of metal compound coatings on polymer films

Science.gov (United States)

Khlebnikov, Nikolai; Polyakov, Evgenii; Borisov, Sergei; Barashev, Nikolai; Biramov, Emir; Maltceva, Anastasia; Vereshchagin, Artem; Khartov, Stas; Voronin, Anton

2016-01-01

In this article, the principle and examples composite materials obtained by deposition of metal compound coatings on polymer film substrates by the ion-plasma sputtering method are presented. A synergistic effect is to obtain the materials with structural properties of the polymer substrate and the surface properties of the metal deposited coatings. The technology of sputtering of TiN coatings of various thicknesses on polyethylene terephthalate films is discussed. The obtained composites are characterized by X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDX), atomic force microscopy (AFM), and scanning tunneling microscopy (STM) is shown. The examples of application of this method, such as receiving nanocomposite track membranes and flexible transparent electrodes, are considered.

Quantitative ion implantation

International Nuclear Information System (INIS)

Gries, W.H.

1976-06-01

This is a report of the study of the implantation of heavy ions at medium keV-energies into electrically conducting mono-elemental solids, at ion doses too small to cause significant loss of the implanted ions by resputtering. The study has been undertaken to investigate the possibility of accurate portioning of matter in submicrogram quantities, with some specific applications in mind. The problem is extensively investigated both on a theoretical level and in practice. A mathematical model is developed for calculating the loss of implanted ions by resputtering as a function of the implanted ion dose and the sputtering yield. Numerical data are produced therefrom which permit a good order-of-magnitude estimate of the loss for any ion/solid combination in which the ions are heavier than the solid atoms, and for any ion energy from 10 to 300 keV. The implanted ion dose is measured by integration of the ion beam current, and equipment and techniques are described which make possible the accurate integration of an ion current in an electromagnetic isotope separator. The methods are applied to two sample cases, one being a stable isotope, the other a radioisotope. In both cases independent methods are used to show that the implantation is indeed quantitative, as predicted. At the same time the sample cases are used to demonstrate two possible applications for quantitative ion implantation, viz. firstly for the manufacture of calibration standards for instrumental micromethods of elemental trace analysis in metals, and secondly for the determination of the half-lives of long-lived radioisotopes by a specific activity method. It is concluded that the present study has advanced quantitative ion implantation to the state where it can be successfully applied to the solution of problems in other fields

Growth and surface morphology of ion-beam sputtered Ti-Ni thin films

International Nuclear Information System (INIS)

Rao, Ambati Pulla; Sunandana, C.S.

2008-01-01

Titanium-nickel thin films have been deposited on float glass substrates by ion beam sputtering in 100% pure argon atmosphere. Sputtering is predominant at energy region of incident ions, 1000 eV to 100 keV. The as-deposited films were investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). In this paper we attempted to study the surface morphology and elemental composition through AFM and XPS, respectively. Core level as well as valence band spectra of ion-beam sputtered Ti-Ni thin films at various Ar gas rates (5, 7 and 12 sccm) show that the thin film deposited at 3 sccm possess two distinct peaks at binding energies 458.55 eV and 464.36 eV mainly due to TiO 2 . Upon increasing Ar rate oxidation of Ti-Ni is reduced and the Ti-2p peaks begin approaching those of pure elemental Ti. Here Ti-2p peaks are observed at binding energy positions of 454.7 eV and 460.5 eV. AFM results show that the average grain size and roughness decrease, upon increasing Ar gas rate, from 2.90 μm to 0.096 μm and from 16.285 nm to 1.169 nm, respectively

Effect of interfacial oxide thickness on the photocatalytic activity of magnetron-sputtered TiO2coatings on aluminum substrate

DEFF Research Database (Denmark)

Daviðsdóttir, Svava; Petit, Jean-Pierre; Shabadi, Rajashekhara

2015-01-01

The influence of the coating/substrate interface on the photocatalytic behavior of Al-TiO2 coatings was investigated. The TiO2 coatings were prepared by magnetron sputtering. The nanoscale structure of the coating was analyzed using X-ray diffraction; atomic force microscopy; scanning electron...... transport between the coating and the metallic substrate. The highest photocurrents were indeed obtained when the thickness of interfacial aluminum oxide could be reduced by sputtering a thin Ti layer prior to TiO2 coating. Photocurrent plotted for different photon energy for a TiO2 coating on a Ti...

Study of Au- production in a plasma-sputter type negative ion source

International Nuclear Information System (INIS)

Okabe, Yushirou.

1991-10-01

A negative ion source of plasma-sputter type has been constructed for the purpose of studying physical processes which take place in the ion source. Negative ions of gold are produced on the gold target which is immersed in an argon discharge plasma and biased negatively with respect to the plasma. The work function of the target surface was lowered by the deposition of Cs on the target. An in-situ method has been developed to determine the work function of the target surface in the ion source under discharge conditions. The observed minimum work function of a cesiated gold surface in an argon plasma was 1.3 eV, when the negative ion production rate took the maximum value. The production rate increased monotonically and saturated when the surface work function was reduced from 1.9 eV to 1.3 eV. The dependence of Au - production rate on the incident ion energy and on the number of the incident ion was studied. From the experimental results, it is shown that the sputtering process is an important physical process for the negative ion production in the plasma-sputter type negative ion source. The energy distribution function was also measured. When the bias voltage was smaller than 280 V, the high energy component in the distribution decreased as the target voltage was decreased. Therefore, the energy spread ΔE, of the observed negative ion energy distribution also decreased. This tendency is also seen in the energy spectrum of Cu atoms sputtered in normal direction by Ar + ions. (J.P.N.)

Argonne inverted sputter source

International Nuclear Information System (INIS)

Yntema, J.L.; Billquist, P.J.

1983-01-01

The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

Plasma diagnostic studies of the influence of process variables upon the atomic and molecular species ejected from (1-x)Li4SiO4:xLi3PO4 targets during rf-magnetron sputtering

International Nuclear Information System (INIS)

Wachs, A.L.; Bates, J.B.; Dudney, N.J.; Luck, C.F.

1990-01-01

The deposition of thin-film electrolytes is a critical step in the development of lithium microbatteries with the potential for circuit integration. We have performed a preliminary study of the rf-magnetron sputtering of (1-x)Li 4 SiO 4 :xLi 3 PO 4 targets used to deposit amorphous thin-film electrolytes formed of the three-component system Li 2 O--SiO 2 --P 2 O 5 . Mass and optical emission spectroscopies have been used to investigate the effects of target composition and the deposition conditions upon the atomic and molecular species ejected from the targets. The data provide important information for understanding the mechanism of film formation and for monitoring the Li atomic flux onto the substrates during film growth. 5 refs., 7 figs., 1 tab

Quantitative atom probe analysis of nanostructure containing clusters and precipitates with multiple length scales

International Nuclear Information System (INIS)

Marceau, R.K.W.; Stephenson, L.T.; Hutchinson, C.R.; Ringer, S.P.

2011-01-01

A model Al-3Cu-(0.05 Sn) (wt%) alloy containing a bimodal distribution of relatively shear-resistant θ' precipitates and shearable GP zones is considered in this study. It has recently been shown that the addition of the GP zones to such microstructures can lead to significant increases in strength without a decrease in the uniform elongation. In this study, atom probe tomography (APT) has been used to quantitatively characterise the evolution of the GP zones and the solute distribution in the bimodal microstructure as a function of applied plastic strain. Recent nuclear magnetic resonance (NMR) analysis has clearly shown strain-induced dissolution of the GP zones, which is supported by the current APT data with additional spatial information. There is significant repartitioning of Cu from the GP zones into the solid solution during deformation. A new approach for cluster finding in APT data has been used to quantitatively characterise the evolution of the sizes and shapes of the Cu containing features in the solid solution solute as a function of applied strain. -- Research highlights: → A new approach for cluster finding in atom probe tomography (APT) data has been used to quantitatively characterise the evolution of the sizes and shapes of the Cu containing features with multiple length scales. → In this study, a model Al-3Cu-(0.05 Sn) (wt%) alloy containing a bimodal distribution of relatively shear-resistant θ' precipitates and shearable GP zones is considered. → APT has been used to quantitatively characterise the evolution of the GP zones and the solute distribution in the bimodal microstructure as a function of applied plastic strain. → It is clearly shown that there is strain-induced dissolution of the GP zones with significant repartitioning of Cu from the GP zones into the solid solution during deformation.

Investigation of the effect of the incorporated Fe atoms in the ion-beam induced nanopatterns on Si(001)

Energy Technology Data Exchange (ETDEWEB)

Khanbabaee, Behnam; Biermanns, Andreas; Pietsch, Ullrich [Siegen Univ. (Germany). Festkoerperphysik; Cornejo, Marina; Frost, Frank [Leibniz-Institute fuer Oberflaechenmodifizierung e.V. (IOM), Leipzig (Germany)

2012-07-01

Ion beam erosion of semiconductor surfaces can modify the surface and depends on main sputtering parameters; different surface topographies such as ripple or dot like pattern are fabricated on the surface. Recent experiments have shown that the incorporation of foreign metallic atoms during the sputtering process plays a crucial role in pattern formation on surfaces. In the result of investigation we report on the depth profile of Fe atoms incorporated in sputtering process on Si(100) with low energy Kr ion beam. X-ray reflectivity (XRR) measurements determine the concentration profile of Fe atoms. X-ray absorption near edge spectroscopy (XANES) at the Fe K-edge (7112 eV) shows the formation of Fe rich silicide near surface region. X-ray photoelectron spectroscopy (XPS) shows a shift in the binding energy of Si2p levels at the surface compared top bulk confirming the formation of different phases of Fe-silicide on tope and below the surface. The depth profiles obtained by XRR are compared to results obtained by complementary secondary-ion mass spectrometry (SIMS).

Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

International Nuclear Information System (INIS)

Qian, H X; Zeng, X R; Zhou, W

2010-01-01

Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

Structural and magnetic properties of NiZn-ferrite thin films prepared by radio frequency magnetron sputtering

International Nuclear Information System (INIS)

Liu Yingli; Li Yuanxun; Zhang Huaiwu; Chen Daming; Mu Chunhong

2011-01-01

Polycrystalline NiZn-ferrite thin films were deposited on Si(100) substrate by rf magnetron sputtering, using targets with a nominal composition of Ni 0.5 Zn 0.5 Fe 2 O 4 . The effects of substrate condition, sputtering pressure, and postannealing on the structure and magnetic properties of thin films have been investigated. Our results show that the preferred orientation of the NiZn spinel film changed from (311) to (400) with increasing the Ar pressure from 0.8 to 1.6 Pa, meanwhile, the grain size also increased. Atomic force microscopy analysis indicates that perfect surface morphology of the film can be obtained at a relatively lower sputtering pressure of 1.0 Pa. The relative percentage of residual oxygen increases significantly on a condition of lower sputtering pressure, and plays an important role in film structure due to the strong molecular adsorption tendency of oxygen on the film surface during the deposition process. A thin film with a typical thickness of 1 μm, a saturation magnetization of 150 emu/cm 3 , and a coercivity of 8.8 kA/m has been obtained after annealing at 800 deg. C, which has the potential application in magnetic integrated circuits.

Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

International Nuclear Information System (INIS)

Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

2016-01-01

Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

Imaging with Mass Spectrometry: A SIMS and VUV-Photoionization Study of Ion-Sputtered Atoms and Clusters from GaAs and Au

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Lynelle; Zhou, Jia; Wilson, Kevin R.; Leone, Stephen R.; Ahmed, Musahid

2008-12-05

A new mass spectrometry surface imaging method is presented in which ion-sputtered neutrals are postionized by wavelength-tunable vacuum ultraviolet (VUV) light from a synchrotron source. Mass spectra and signal counts of the photoionized neutrals from GaAs (100) and Au are compared to those of the secondary ions. While clusters larger than dimers are more efficiently detected as secondary ions, certain species, such as As2, Au and Au2, are more efficiently detected through the neutral channel. Continuously tuning the photon wavelength allows photoionization efficiency (PIE) curves to be obtained for sputtered Asm (m=1,2) and Aun (n=1-4). From the observed ionization thresholds, sputtered neutral As and Au show no clear evidence of electronic excitation, while neutral clusters have photoionization onsets shifted to lower energies by ~;;0.3 eV. These shifts are attributed to unresolved vibrational and rotational excitations. High-spatial resolution chemical imaging with synchrotron VUV postionization is demonstrated at two different photon energies using a copper TEM grid embedded in indium. The resulting images are used to illustrate the use of tunable VUV light for verifying mass peak assignments by exploiting the unique wavelength-dependent PIE of each sputtered neutral species. This capability is valuable for identifying compounds when imaging chemically complex systems with mass spectrometry-based techniques.

Sputtered PdO Decorated TiO2 Sensing Layer for a Hydrogen Gas Sensor

Directory of Open Access Journals (Sweden)

Jeong Hoon Lee

2018-01-01

Full Text Available We report a sputtered PdO decorated TiO2 sensing layer by radiofrequency (RF sputtering methods and demonstrated gas sensing performance for H2 gas. We prepared sputtered anatase TiO2 sensing films with 200 nm thickness and deposited a Pd layer on top of the TiO2 films with a thickness ranging from 3 nm to 13 nm. Using an in situ TiO2/Pd multilayer annealing process at 550°C for 1 hour, we observed that Pd turns into PdO by Auger electron spectroscopy (AES depth profile and confirmed decorated PdO on TiO2 sensing layer from scanning electron microscope (SEM and atomic-force microscope (AFM. We also observed a positive sensing signal for 3, 4.5, and 6.5 nm PdO decorated TiO2 sensor while we observed negative output signal for a 13.5 nm PdO decorated one. Using a microheater platform, we acquired fast response time as ~11 sec and sensitivity as 6 μV/ppm for 3 nm PdO under 33 mW power.

Computer simulation of sputtering: A review

International Nuclear Information System (INIS)

Robinson, M.T.; Hou, M.

1992-08-01

In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

Novel magnetic controlled plasma sputtering method

International Nuclear Information System (INIS)

Axelevich, A.; Rabinovich, E.; Golan, G.

1996-01-01

A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

Synthesis of nanoparticles using high-pressure sputtering for magnetic domain imaging

International Nuclear Information System (INIS)

Shah, Prasanna; Gavrin, A.

2006-01-01

We have developed a modified sputtering gun for direct synthesis of metallic nanoparticles, and used this system to produce magnetic domain images using high-resolution Bitter microscopy (HRBM). The nanoparticles are produced at 900 mTorr inside the gun and transported to the main vacuum chamber by the pressure difference between the chamber and the gun interior. Fe particles synthesized using the particle gun have been characterized using X-ray diffraction, atomic force microscopy, and transmission electron microscopy techniques. The particles are 15-30 nm in size with a pure BCC phase. Further, we have deposited these Fe nanoparticles on magnetic recording media and observed the domain patterns using optical microscopy, scanning electron microscopy, and atomic force microscopy. We achieve a spatial resolution of at most 80 nm

Sputtering yields of Si and Ni from the Ni sub(1-x)Si sub(x) system studied by Rutherford backscattering spectrometry

Energy Technology Data Exchange (ETDEWEB)

Kim, S C; Yamaguchi, S; Kataoka, Y; Iwami, M; Hiraki, A [Osaka Univ., Suita (Japan). Faculty of Engineering; Satou, M; Fujimoto, F

1982-01-01

Sputtering yields of Si and Ni from thin layer films of Ni-Si compounds (Ni sub(1-x)Si sub(x)), including the pure materials (Ni and Si), caused by 5keV Ar/sup +/ ion bombardment were investigated using backscattering spectrometry. The sputtering yield for Si from Ni sub(1-x)Si sub(x) increased with increasing Si concentration. However, there is an abrupt decrease in the yield for Si concentrations above NiSi/sub 2/ to pure Si. This is in clear contrast to the sputtering yield of Ni from Ni sub(1-x)Si sub(x) which increased with increasing Ni concentration monotonously. These results are discussed on the basis of both the difference in the atomic density and the electronic state of the alloy.

Spectral artefacts post sputter-etching and how to cope with them - A case study of XPS on nitride-based coatings using monoatomic and cluster ion beams

Science.gov (United States)

Lewin, Erik; Counsell, Jonathan; Patscheider, Jörg

2018-06-01

The issue of artefacts due to sputter-etching has been investigated for a group of AlN-based thin film materials with varying thermodynamical stability. Stability of the materials was controlled by alloying AlN with the group 14 elements Si, Ge or Sn in two different concentrations. The coatings were sputter-etched with monoatomic Ar+ with energies between 0.2 and 4.0 keV to study the sensitivity of the materials for sputter damage. The use of Arn+ clusters to remove an oxidised surface layer was also evaluated for a selected sample. The spectra were compared to pristine spectra obtained after in-vacuo sample transfer from the synthesis chamber to the analysis instrument. It was found that the all samples were affected by high energy (4 keV) Ar+ ions to varying degrees. The determining factors for the amount of observed damage were found to be the materials' enthalpy of formation, where a threshold value seems to exist at approximately -1.25 eV/atom (∼-120 kJ/mol atoms). For each sample, the observed amount of damage was found to have a linear dependence to the energy deposited by the ion beam per volume removed material. Despite the occurrence of sputter-damage in all samples, etching settings that result in almost artefact-free spectral data were found; using either very low energy (i.e. 200 eV) monoatomic ions, or an appropriate combination of ion cluster size and energy. The present study underlines that analysis post sputter-etching must be carried out with an awareness of possible sputter-induced artefacts.

Heavy particle transport in sputtering systems

Science.gov (United States)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Sputtering on cobalt with noble gas ions

International Nuclear Information System (INIS)

Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

1983-01-01

Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

Quantitative atomic resolution mapping using high-angle annular dark field scanning transmission electron microscopy

International Nuclear Information System (INIS)

Van Aert, S.; Verbeeck, J.; Erni, R.; Bals, S.; Luysberg, M.; Dyck, D. Van; Tendeloo, G. Van

2009-01-01

A model-based method is proposed to relatively quantify the chemical composition of atomic columns using high angle annular dark field (HAADF) scanning transmission electron microscopy (STEM) images. The method is based on a quantification of the total intensity of the scattered electrons for the individual atomic columns using statistical parameter estimation theory. In order to apply this theory, a model is required describing the image contrast of the HAADF STEM images. Therefore, a simple, effective incoherent model has been assumed which takes the probe intensity profile into account. The scattered intensities can then be estimated by fitting this model to an experimental HAADF STEM image. These estimates are used as a performance measure to distinguish between different atomic column types and to identify the nature of unknown columns with good accuracy and precision using statistical hypothesis testing. The reliability of the method is supported by means of simulated HAADF STEM images as well as a combination of experimental images and electron energy-loss spectra. It is experimentally shown that statistically meaningful information on the composition of individual columns can be obtained even if the difference in averaged atomic number Z is only 3. Using this method, quantitative mapping at atomic resolution using HAADF STEM images only has become possible without the need of simultaneously recorded electron energy loss spectra.

Molecular dynamics simulations of sputtering of organic overlayers by slow, large clusters

International Nuclear Information System (INIS)

Rzeznik, L.; Czerwinski, B.; Garrison, B.J.; Winograd, N.; Postawa, Z.

2008-01-01

The ion-stimulated desorption of organic molecules by impact of large and slow clusters is examined using molecular dynamics (MDs) computer simulations. The investigated system, represented by a monolayer of benzene deposited on Ag{1 1 1}, is irradiated with projectiles composed of thousands of noble gas atoms having a kinetic energy of 0.1-20 eV/atom. The sputtering yield of molecular species and the kinetic energy distributions are analyzed and compared to the results obtain for PS4 overlayer. The simulations demonstrate quite clearly that the physics of ejection by large and slow clusters is distinct from the ejection events stimulated by the popular SIMS clusters, like C 60 , Au 3 and SF 5 at tens of keV energies.

Electrical resistivity of sputtered molybdenum films

International Nuclear Information System (INIS)

Nagano, J.

1980-01-01

The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

Sputter deposition and characterisation of hard wear-resistant Ti/TiN multilayers

Energy Technology Data Exchange (ETDEWEB)

Simmonds, M.C.; Swygenhoven, H. van [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

Multilayered Ti/TiN thin films have been synthesized by magnetron sputter deposition. Alternating layers of Ti and TiN with layer thickness in the 5-50 nm range are sequentially deposited. The structure of the films have been characterised by atomic force microscopy (AFM), X-ray diffraction and reflection and Auger depth profiling. The mechanical properties have been investigated using pin-on-disc wear rate testing, nanoindentation determination of hardness and micro scratch testing. (author) 1 fig., 3 refs.

Formation of nanostructures on HOPG surface in presence of surfactant atom during low energy ion irradiation

Energy Technology Data Exchange (ETDEWEB)

Ranjan, M., E-mail: ranjanm@ipr.res.in; Joshi, P.; Mukherjee, S.

2016-07-15

Low energy ions beam often develop periodic patterns on surfaces under normal or off-normal incidence. Formation of such periodic patterns depends on the substrate material, the ion beam parameters, and the processing conditions. Processing conditions introduce unwanted contaminant atoms, which also play strong role in pattern formation by changing the effective sputtering yield of the material. In this work we have analysed the effect of Cu, Fe and Al impurities introduced during low energy Ar{sup +} ion irradiation on HOPG substrate. It is observed that by changing the species of foreign atoms the surface topography changes drastically. The observed surface topography is co-related with the modified sputtering yield of HOPG. Presence of Cu and Fe amplify the effective sputtering yield of HOPG, so that the required threshold for the pattern formation is achieved with the given fluence, whereas Al does not lead to any significant change in the effective yield and hence no pattern formation occurs.

Growing LaAlO3/SrTiO3 interfaces by sputter deposition

Directory of Open Access Journals (Sweden)

I. M. Dildar

2015-06-01

Full Text Available Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO3 on SrTiO3 substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

International bulletin on atomic and molecular data for fusion. No. 52

Energy Technology Data Exchange (ETDEWEB)

Stephens, J A [ed.

1997-08-01

This bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In part 1 the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths, transition probabilities, oscillator strengths, interatomic potentials); (ii) atomic and molecular collisions (photon collisions, electron collisions, heavy-particle collisions); and (iii) surface interactions (sputtering, chemical reactions, trapping and detrapping, adsorption, desorption, reflection, and secondary electron emission). Part 2 contains the bibliographic data, essentially for the above listed topics.

International bulletin on atomic and molecular data for fusion. No. 52

International Nuclear Information System (INIS)

Stephens, J.A.

1997-08-01

This bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In part 1 the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths, transition probabilities, oscillator strengths, interatomic potentials); (ii) atomic and molecular collisions (photon collisions, electron collisions, heavy-particle collisions); and (iii) surface interactions (sputtering, chemical reactions, trapping and detrapping, adsorption, desorption, reflection, and secondary electron emission). Part 2 contains the bibliographic data, essentially for the above listed topics

Serial co-sputtering. Development of a versatile coating technology and its characterization using the example of rate enhancement of metal oxides by co-doping; Serielles Co-Sputtern. Entwicklung einer flexiblen Beschichtungstechnologie und deren Charakterisierung am Beispiel der Ratenerhoehung von Metalloxiden durch Co-Dotierung

Energy Technology Data Exchange (ETDEWEB)

Austgen, Michael

2011-09-19

Focus of this work is the design and characterization of a versatile coating system based on magnetron sputter deposition. This technology consists of a rotary target (primary target) that will be sputtered at one position and also can be coated at a different position with a secondary material by another sputter process. This simultaneous operation and the serial order of two sputter processes is the serial co-sputter process. A highly elaborated gas separation allows the operation of the primary sputter process in a reactive gas atmosphere whereas the secondary process can be driven in a non-reactive atmosphere. Compared to conventional co-sputtering the gas separation enables a stable operation of the secondary sputter process even if reactive gas is added to the primary sputter process. To develop an understanding of the process dynamics of serial co-sputtering the rate enhancement of metal oxides by co-doping with heavy atoms has been investigated first. If heavy elements are added to the target material the collision cascades can be reflected back towards the target surface by a more efficient momentum transfer and therefore increase the sputtering rate. The addition of heavy atoms can be achieved by serial co-sputtering. In the secondary sputter process the heavy element will be sputter deposited onto the rotary target. When entering the erosion zone of the primary sputter process the heavy atoms will be partially sputtered away and partially recoil implanted beneath the target surface. The later will contribute to the sputter yield amplification effect described above. In this work the sputter yield amplification effect has been investigated for the metal oxides Al{sub 2}O{sub 3} and TiO{sub 2} by co-doping of a aluminum and titanium rotary target with the heavy element tungsten (Z=74) and bismuth (Z=83). The primary process variables are the O{sub 2}-gas flow which determines the working point of the primary sputtering process, the rotation speed of the

Interaction of energetic particles with polymer surfaces: surface morphology development and sputtered polymer-fragment ion analysis

International Nuclear Information System (INIS)

Michael, R.S.

1987-01-01

The core of this thesis is based on a series of papers that have been published or will soon be published in which the various processes taking place in the energetic particle-polymer surface interaction scene is investigated. Results presented show different developments on polymer surfaces when compared to the vast experimental data on energetic particle-metal surface interactions. The surface morphology development depends on the physical characteristics of the polymer. Sputtering yields of fluoropolymers were several orders higher than the sputtering yields of aliphatic and aromatic polymers. Depending on the chemical nature of the polymer, the surface morphology development was dependent upon the extent of radiation-damage accumulation. Fast Atom Bombardment Mass Spectrometry at low and high resolution was applied to the characterization of sputtered polymer fragment ions. Fragment ions and their intensities were used to identify polymer samples, observe radiation damage accumulation and probe polymer-polymer interface of a polymer-polymer sandwich structure. A model was proposed which attempts to explain the nature of processes involved in the energetic particle-polymer surface interaction region

The accumulation of disorder, subject to saturation and sputter limitation, in ion irradiated solids

International Nuclear Information System (INIS)

Carter, G.; Webb, R.; Collins, R.

1978-01-01

The depth distribution of disorder and the depth integrated disorder produced by ion irradiation of solids is analysed theoretically as a function of increasing ion fluence when disorder saturation processes operate at all depths and the solid surface is continuously uniformly eroded by sputtering. The resulting defining equations are evaluated numerically for a Gaussian approximation to the disorder depth function with parameters appropriate to low, equal and high projectile:substrate mass ratio conditions, for several values of sputtering coefficient and effective atom displacement energy. It is shown that the form, if not the magnitude, of the integrated disorder/projectile fluence function is only weakly dependent upon these parameters. More meaningful comparison with depth resolved disorder functions is, however, possible and such a comparison is made for 100 keV Sb projectiles on a Si substrate. (author)

Monte Carlo calculations of ligth-ion sputtering as a function of the incident angle

International Nuclear Information System (INIS)

Haggmark, L.G.; Biersack, J.P.

1980-01-01

The sputtering of metal surfaces by light ions has been studied as a function of the incident angle using an extension of the TRIM Monte Carlo computer program. Sputtering yields were calculated at both normal and oblique angles of incidence for H, D, T, and 4 He impinging on Ni, Mo, and Au targets with energies <= 10 keV. Direct comparisons are made with the most recent experimental and theoretical results. There is generally good agreement with the experimental data although our calculated maximum in the yield usually occurs at a smaller incident angle, measured from the surface normal. The enhancement of the yield at large incident angles over that at normal incidence is observed to be a complex function of the incident ion's energy and mass and the target's atomic weight and surface binding energy. (orig.)

Sputtering measurements on JET using a multichannel visible spectrometer

International Nuclear Information System (INIS)

Stamp, M.F.; Morgan, P.D.; Summers, H.P.

1989-01-01

A multichannel visible spectrometer has been used on JET to simultaneously observe the emission from D, H, C and O atoms and ions in the proximity of a belt limiter. The absolute intensity of the line emission, along with a Langmuir probe measurement of the edge electron temperature and an atomic physics model, allows us to calculate the influxes of these species. Under steady-state conditions the influxes of D and He are the same as the effluxes, so the ratio of impurity to fuel fluxes, e.g. carbon to deuterium, is the apparent sputtering yield of deuterium on carbon in the tokamak environment. The measured flux ratio Γ c /Γ D is also indicative of the central carbon impurity concentration in JET, because the limiters are the main source of impurities. For similar particle transport, Γ c /Γ D =n c (o)/n D (o), so for a 10% flux ratio, n c /n e =6.6%, Z eff =3. (author) 7 refs., 5 figs

16. International Conference on Atomic Collisions in Solids. Book of abstracts

Energy Technology Data Exchange (ETDEWEB)

Paul, H; Bauer, P; Semrad, D [ed.; Johannes Kepler Univ., Linz (Austria). Inst. fuer Experimentalphysik

1996-12-31

In this conference book of abstracts the following topics are treated: The interaction of atomic, molecular or ion beams with surfaces of solid metals and crystals, scattering and collisions, ion bombardment, ion channeling, energy losses and charge exchange, thin films, secondary emission, the Auger effect, sputtering of particles and atomic and molecular clusters. Thereby not only experimental results are presented but also computerized simulation methods are applied. (Suda).

16. International Conference on Atomic Collisions in Solids. Book of abstracts

International Nuclear Information System (INIS)

Paul, H.; Bauer, P.; Semrad, D.

1995-01-01

In this conference book of abstracts the following topics are treated: The interaction of atomic, molecular or ion beams with surfaces of solid metals and crystals, scattering and collisions, ion bombardment, ion channeling, energy losses and charge exchange, thin films, secondary emission, the Auger effect, sputtering of particles and atomic and molecular clusters. Thereby not only experimental results are presented but also computerized simulation methods are applied. (Suda)

Effect of substrate temperature on the morphological, structural, and optical properties of RF sputtered Ge1−x Snx films on Si substrate

International Nuclear Information System (INIS)

Mahmodi, H; Hashim, M R

2017-01-01

In this study, Ge 1−x Sn x alloy films are co-sputtered on Si(100) substrates using RF magnetron sputtering at different substrate temperatures. Scanning electron micrographs, atomic force microscopy (AFM), Raman spectroscopy, and x-ray photoemission spectroscopy (XPS) are conducted to investigate the effect of substrate temperature on the structural and optical properties of grown GeSn alloy films. AFM results show that RMS surface roughness of the films increases from 1.02 to 2.30 nm when raising the substrate temperature. This increase could be due to Sn surface segregation that occurs when raising the substrate temperature. Raman spectra exhibits the lowest FWHM value and highest phonon intensity for a film sputtered at 140 °C. The spectra show that decreasing the deposition temperature to 140 °C improves the crystalline quality of the alloy films and increases nanocrystalline phase formation. The results of Raman spectra and XPS confirm Ge–Sn bond formation. The optoelectronic characteristics of fabricated metal-semiconductor-metal photodetectors on sputtered samples at room temperature (RT) and 140 °C are studied in the dark and under illumination. The sample sputtered at 140 °C performs better than the RT sputtered sample. (paper)

Comparison of lanthanum substituted bismuth titanate (BLT) thin films deposited by sputtering and pulsed laser deposition

International Nuclear Information System (INIS)

Besland, M.P.; Djani-ait Aissa, H.; Barroy, P.R.J.; Lafane, S.; Tessier, P.Y.; Angleraud, B.; Richard-Plouet, M.; Brohan, L.; Djouadi, M.A.

2006-01-01

Bi 4-x La x Ti 3 O 12 (BLT x ) (x = 0 to 1) thin films were grown on silicon (100) and platinized substrates Pt/TiO 2 /SiO 2 /Si using RF diode sputtering, magnetron sputtering and pulsed laser deposition (PLD). Stoichiometric home-synthesized targets were used. Reactive sputtering was investigated in argon/oxygen gas mixture, with a pressure ranging from 0.33 to 10 Pa without heating the substrate. PLD was investigated in pure oxygen, at a chamber pressure of 20 Pa for a substrate temperature of 400-440 deg. C. Comparative structural, chemical, optical and morphological characterizations of BLT thin films have been performed by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Energy Dispersive Spectroscopy (EDS), X-Ray Photoelectron Spectroscopy (XPS), Spectro-ellipsometric measurements (SE) and Atomic Force Microscopy (AFM). Both sputtering techniques allow to obtain uniform films with thickness ranging from 200 to 1000 nm and chemical composition varying from (Bi,La) 2 Ti 3 O 12 to (Bi,La) 4.5 Ti 3 O 12 , depending on deposition pressure and RF power. In addition, BLT films deposited by magnetron sputtering, at a pressure deposition ranging from 1.1 to 5 Pa, were well-crystallized after a post-deposition annealing at 650 deg. C in oxygen. They exhibit a refractive index and optical band gap of 2.7 and 3.15 eV, respectively. Regarding PLD, single phase and well-crystallized, 100-200 nm thick BLT films with a stoichiometric (Bi,La) 4 Ti 3 O 12 chemical composition were obtained, exhibiting in addition a preferential orientation along (200). It is worth noting that BLT films deposited by magnetron sputtering are as well-crystallized than PLD ones

Stabilization of sputtered gold and silver nanoparticles in PEG colloid solutions

International Nuclear Information System (INIS)

Slepička, P.; Elashnikov, R.; Ulbrich, P.; Staszek, M.; Kolská, Z.; Švorčík, V.

2015-01-01

In this study, a simple technique for preparation of colloid solution of metal nanoparticles in polyethylene glycol (PEG)/H 2 O is described. By this technique, stable colloidal metal solutions can be prepared ready for use without application of chemical reactions, stabilizers, or reducing agents. The nanoparticles are created by direct sputtering of metal into PEG. The influence of sputter conditions and the concentration of PEG/H 2 O on the properties of nanoparticles was studied. The nanoparticles were characterized by transmission electron microscopy, atomic absorption spectrometry, dynamic light scattering, and UV–Vis spectroscopy. UV–Vis spectra of gold nanoparticle solution exhibit localized surface plasmon resonance characteristic peaks located in the region 513–560 nm (PEG/H 2 O—1/1), 509–535 nm (PEG/H 2 O—1/9), and for silver nanoparticles in the region from 401 to 421 nm. Silver nanoparticles have a broader size distribution compared with gold ones. An appropriate choice of concentration, mixing, and deposition conditions allows preparing the stable solution of gold or silver nanoparticles

Stabilization of sputtered gold and silver nanoparticles in PEG colloid solutions

Energy Technology Data Exchange (ETDEWEB)

Slepička, P., E-mail: petr.slepicka@vscht.cz; Elashnikov, R. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic); Ulbrich, P. [University of Chemistry and Technology Prague, Department of Biochemistry and Microbiology (Czech Republic); Staszek, M. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic); Kolská, Z. [University of J. E. Purkyně, Faculty of Science (Czech Republic); Švorčík, V. [University of Chemistry and Technology Prague, Department of Solid State Engineering (Czech Republic)

2015-01-15

In this study, a simple technique for preparation of colloid solution of metal nanoparticles in polyethylene glycol (PEG)/H{sub 2}O is described. By this technique, stable colloidal metal solutions can be prepared ready for use without application of chemical reactions, stabilizers, or reducing agents. The nanoparticles are created by direct sputtering of metal into PEG. The influence of sputter conditions and the concentration of PEG/H{sub 2}O on the properties of nanoparticles was studied. The nanoparticles were characterized by transmission electron microscopy, atomic absorption spectrometry, dynamic light scattering, and UV–Vis spectroscopy. UV–Vis spectra of gold nanoparticle solution exhibit localized surface plasmon resonance characteristic peaks located in the region 513–560 nm (PEG/H{sub 2}O—1/1), 509–535 nm (PEG/H{sub 2}O—1/9), and for silver nanoparticles in the region from 401 to 421 nm. Silver nanoparticles have a broader size distribution compared with gold ones. An appropriate choice of concentration, mixing, and deposition conditions allows preparing the stable solution of gold or silver nanoparticles.

Structural study and fabrication of nano-pattern on ultra thin film of Ag grown by magnetron sputtering

International Nuclear Information System (INIS)

Banerjee, S.; Mukherjee, S.; Kundu, S.

2001-01-01

We present the structural study of ultra thin Ag films using grazing incidence x-ray reflectivity and the modification of these films with the tip of an atomic force microscope. Ag thin films are deposited using dc magnetron sputtering on a Si(001) substrate. Initially, the growth of the film is carpet like and above a certain thickness (∼42 A) the film structure changes to form mounds. This ultra thin film of Ag having carpet-like growth can be modified by the tip of an atomic force microscope, which occurs due to the porous nature of the film. A periodic pattern of nanometer dimensions has been fabricated on this film using the atomic force microscope tip. (author)

Sputtering calculations with the discrete ordinated method

International Nuclear Information System (INIS)

Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

1977-01-01

The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

A methodology for the extraction of quantitative information from electron microscopy images at the atomic level

International Nuclear Information System (INIS)

Galindo, P L; Pizarro, J; Guerrero, E; Guerrero-Lebrero, M P; Scavello, G; Yáñez, A; Sales, D L; Herrera, M; Molina, S I; Núñez-Moraleda, B M; Maestre, J M

2014-01-01

In this paper we describe a methodology developed at the University of Cadiz (Spain) in the past few years for the extraction of quantitative information from electron microscopy images at the atomic level. This work is based on a coordinated and synergic activity of several research groups that have been working together over the last decade in two different and complementary fields: Materials Science and Computer Science. The aim of our joint research has been to develop innovative high-performance computing techniques and simulation methods in order to address computationally challenging problems in the analysis, modelling and simulation of materials at the atomic scale, providing significant advances with respect to existing techniques. The methodology involves several fundamental areas of research including the analysis of high resolution electron microscopy images, materials modelling, image simulation and 3D reconstruction using quantitative information from experimental images. These techniques for the analysis, modelling and simulation allow optimizing the control and functionality of devices developed using materials under study, and have been tested using data obtained from experimental samples

Sputtering induced surface composition changes in copper-palladium alloys

International Nuclear Information System (INIS)

Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

1981-01-01

It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

Fabrication and characterization of He-charged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

Science.gov (United States)

Song, Liang; Wang, Xianping; Wang, Le; Zhang, Ying; Liu, Wang; Jiang, Weibing; Zhang, Tao; Fang, Qianfeng; Liu, Changsong

2017-04-01

He-charged oxide dispersion strengthened (ODS) FeCrNi films were prepared by a radio-frequency (RF) plasma magnetron sputtering method in a He and Ar mixed atmosphere at 150 °C. As a comparison, He-charged FeCrNi films were also fabricated at the same conditions through direct current (DC) plasma magnetron sputtering. The doping of He atoms and Y2O3 in the FeCrNi films was realized by the high backscattered rate of He ions and Y2O3/FeCrNi composite target sputtering method, respectively. Inductive coupled plasma (ICP) and x-ray photoelectron spectroscopy (XPS) analysis confirmed the existence of Y2O3 in FeCrNi films, and Y2O3 content hardly changed with sputtering He/Ar ratio. Cross-sectional scanning electron microscopy (SEM) shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio. Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio, while the dispersion of Y2O3 apparently increased the hardness of the films. Elastic recoil detection (ERD) showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts (˜17 at.%). Compared with the minimal change of He level with depth in DC-sputtered films, the He amount decreases gradually in depth in the RF-sputtered films. The Y2O3-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y2O3 and the inhibition effect of nano-sized Y2O3 particles on the He element.

Calculations of atomic sputtering and displacement cross-sections in solid elements by electrons with energies from threshold to 1.5 MV

International Nuclear Information System (INIS)

Bradley, C.R.

1988-12-01

The kinetics of knock-on collisions of relativistic electrons with nuclei and details of the numerical evaluation of differential, recoil, and total Mott cross-sections are reviewed and discussed. The effects of electron beam induced displacement and sputtering, in the transmission electron microscope (TEM) environment, on microanalysis are analyzed with particular emphasis placed on the removal of material by knock-on sputtering. The mass loss predicted due to transmission knock-on sputtering is significant for many elements under conditions frequently encountered in microanalysis. Total Mott cross-sections are tabulated for all naturally occurring solid elements up to Z = 92 at displacement energies of one, two, four, and five times the sublimation energy and for accelerating voltages accessible in the transmission electron microscope. Fortran source code listings for the calculation of the differential Mott cross-section as a function of electron scattering angle (dMottCS), as a function of nuclear recoil angle (RECOIL), and the total Mott cross-section (TOTCS) are included. 48 refs., 21 figs., 12 tabs

Sputter-deposited Mg-Al-O thin films: linking molecular dynamics simulations to experiments

International Nuclear Information System (INIS)

Georgieva, V; Bogaerts, A; Saraiva, M; Depla, D; Jehanathan, N; Lebelev, O I

2009-01-01

Using a molecular dynamics model the crystallinity of Mg x Al y O z thin films with a variation in the stoichiometry of the thin film is studied at operating conditions similar to the experimental operating conditions of a dual magnetron sputter deposition system. The films are deposited on a crystalline or amorphous substrate. The Mg metal content in the film ranged from 100% (i.e. MgO film) to 0% (i.e. Al 2 O 3 film). The radial distribution function and density of the films are calculated. The results are compared with x-ray diffraction and transmission electron microscopy analyses of experimentally deposited thin films by the dual magnetron reactive sputtering process. Both simulation and experimental results show that the structure of the Mg-Al-O film varies from crystalline to amorphous when the Mg concentration decreases. It seems that the crystalline Mg-Al-O films have a MgO structure with Al atoms in between.

Characterization of surface modifications by white light interferometry: applications in ion sputtering, laser ablation, and tribology experiments.

Science.gov (United States)

Baryshev, Sergey V; Erck, Robert A; Moore, Jerry F; Zinovev, Alexander V; Tripa, C Emil; Veryovkin, Igor V

2013-02-27

In materials science and engineering it is often necessary to obtain quantitative measurements of surface topography with micrometer lateral resolution. From the measured surface, 3D topographic maps can be subsequently analyzed using a variety of software packages to extract the information that is needed. In this article we describe how white light interferometry, and optical profilometry (OP) in general, combined with generic surface analysis software, can be used for materials science and engineering tasks. In this article, a number of applications of white light interferometry for investigation of surface modifications in mass spectrometry, and wear phenomena in tribology and lubrication are demonstrated. We characterize the products of the interaction of semiconductors and metals with energetic ions (sputtering), and laser irradiation (ablation), as well as ex situ measurements of wear of tribological test specimens. Specifically, we will discuss: i. Aspects of traditional ion sputtering-based mass spectrometry such as sputtering rates/yields measurements on Si and Cu and subsequent time-to-depth conversion. ii. Results of quantitative characterization of the interaction of femtosecond laser irradiation with a semiconductor surface. These results are important for applications such as ablation mass spectrometry, where the quantities of evaporated material can be studied and controlled via pulse duration and energy per pulse. Thus, by determining the crater geometry one can define depth and lateral resolution versus experimental setup conditions. iii. Measurements of surface roughness parameters in two dimensions, and quantitative measurements of the surface wear that occur as a result of friction and wear tests. Some inherent drawbacks, possible artifacts, and uncertainty assessments of the white light interferometry approach will be discussed and explained.

A new two-photon mechanism of the formation of a continuous spectrum of photons emitted by secondary emission products of atomic particles

International Nuclear Information System (INIS)

Veksler, V.I.

1986-01-01

A two-photon mechanism of the formation of a continuous spectrum of photons emitted by products of metal sputtering is considered. The following process of the two-photon mechanism is considered: the continuous spectrum is formed under quadrupole two-photon transitions in sputtered excited atoms having vacancies at the d level in atoms of transition metals or at the of level in lanthanides found against the filled conduction band. It is shown that the suggested mechanism should play an essential role in the formation of the continuous spectrum of optical radiation

Anomalously high yield of doubly charged Si ions sputtered from cleaned Si surface by keV neutral Ar impact

Energy Technology Data Exchange (ETDEWEB)

Shinde, N.; Morita, K. E-mail: k-morita@mail.nucl.nagoya-u.ac.jp; Dhole, S.D.; Ishikawa, D

2001-08-01

The energy spectra of positively charged and neutral species ejected from the Si(1 1 1) surfaces by keV Ar impact have been measured by means of a combined technique of the time-of-flight (TOF) analysis with the multi-photon resonance ionization spectroscopy (MPRIS). It is shown that positively charged species of Si{sup +}, Si{sup 2+} and SiO{sup +} are ejected from the as-cleaned 7x7 surface by 11 keV Ar impact. It is also shown that Ar sputter cleaning of the as-cleaned 7x7 surface for 14 min at the flux of 2x10{sup 13}/cm{sup 2}s removes completely the oxygen impurity and the yields of Si{sup 2+} is comparable to that of Si{sup +}. Moreover, the ionization probability of Si atoms sputtered is shown to be expressed as an exponential function of the inverse of their velocity. The production mechanism for the doubly charged Si ion is discussed based on the L-shell ionization of Si atoms due to quasi-molecule formation in the collisions of the surface atoms with energetic recoils and subsequent Auger decay of the L-shell vacancy to doubly ionized Si ions.

Sputtering analysis of silicates by XY-TOF-SIMS: Astrophysical applications

Science.gov (United States)

Martinez, Rafael; Langlinay, Thomas; Ponciano, Cassia; da Silveira, Enio F.; Palumbo, Maria Elisabetta; Strazzulla, Giovanni; Brucato, John R.; Hijazi, Hussein; Boduch, Philippe; Cassimi, Amine; Domaracka, Alicja; Ropars, Frédéric; Rothard, Hermann

2015-08-01

Silicates are the dominant material of many objects in the Solar System, e.g. asteroids, the Moon, the planet Mercury and meteorites. Ion bombardment by cosmic rays and solar wind may alter the reflectance spectra of irradiated silicates by inducing physico-chemical changes known as “space weathering”. Furthermore, sputtered particles contribute to the composition of the exosphere of planets or moons. Mercury’s complex particle environment surrounding the planet is composed by thermal and directional neutral atoms (exosphere) originating via surface release and charge-exchange processes, and by ionized particles originated through photo-ionization and again by surface release processes such as ion induced sputtering.As a laboratory approach to understand the evolution of the silicate surfaces and the Na vapor (as well as, in lower concentration, K and Ca) discovered on the solar facing side of Mercury, we measured sputtering yields, velocity spectra and angular distributions of secondary ions from terrestrial silicate analogs. Experiments were performed using highly charged MeV/u and keV/u ions at GANIL in a new UHV set-up (under well controlled surface conditions) [1]. Other experiments were conducted at the Pontifical Catholic University of Rio de Janeiro (PUC-Rio) by using Cf fission fragments (~ 1 MeV/u). Nepheline, an aluminosilicate containing Na and K, evaporated on Si substrates (wafers) was used as model for silicates present in Solar System objects. Production yields, measured as a function of the projectile fluence, allow to study the possible surface stoichiometry changes during irradiation. In addition, from the energy distributions N(E) of sputtered particles it is possible to estimate the fraction of particles that can escape from the gravitational field of Mercury, and those that fall back to the surface and contribute to populate the atmosphere (exosphere) of the planet.The CAPES-COFECUB French-Brazilian exchange program, a CNPq postdoctoral

Experimental and analytical study of the sputtering phenomena

International Nuclear Information System (INIS)

Howard, P.A.

1976-03-01

One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

Surface chemistry and cytotoxicity of reactively sputtered tantalum oxide films on NiTi plates

Energy Technology Data Exchange (ETDEWEB)

McNamara, K. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Kolaj-Robin, O.; Belochapkine, S.; Laffir, F. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Gandhi, A.A. [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland); Tofail, S.A.M., E-mail: tofail.syed@ul.ie [Materials and Surface Science Institute, University of Limerick, Limerick (Ireland); Department of Physics & Energy, University of Limerick, Limerick (Ireland)

2015-08-31

NiTi, an equiatomic alloy containing nickel and titanium, exhibits unique properties such as shape memory effect and superelasticity. NiTi also forms a spontaneous protective titanium dioxide (TiO{sub 2}) layer that allows its use in biomedical applications. Despite the widely perceived biocompatibility there remain some concerns about the sustainability of the alloy's biocompatibility due to the defects in the TiO{sub 2} protective layer and the presence of high amount of sub-surface Ni, which can give allergic reactions. Many surface treatments have been investigated to try to improve both the corrosion resistance and biocompatibility of this layer. For such purposes, we have sputter deposited tantalum (Ta) oxide thin films onto the surface of the NiTi alloy. Despite being one of the promising metals for biomedical applications, Ta, and its various oxides and their interactions with cells have received relatively less attention. The oxidation chemistry, crystal structure, morphology and biocompatibility of these films have been investigated. In general, reactive sputtering especially in the presence of a low oxygen mixture yields a thicker film with better control of the film quality. The sputtering power influenced the surface oxidation states of Ta. Both microscopic and quantitative cytotoxicity measurements show that Ta films on NiTi are biocompatible with little to no variation in cytotoxic response when the surface oxidation state of Ta changes. - Highlights: • Reactive sputtering in low oxygen mixture yields thicker better quality films. • Sputtering power influenced surface oxidation states of Ta. • Cytotoxicity measurements show Ta films on NiTi are biocompatible. • Little to no variation in cytotoxic response when oxidation state changes.

Excited-atom production by electron and ion bombardment of alkali halides

International Nuclear Information System (INIS)

Walkup, R.E.; Avouris, P.; Ghosh, A.P.

1987-01-01

We present experimental results on the production of excited atoms by electron and ion bombardment of alkali halides. For the case of electron bombardment, Doppler shift measurements show that the electronically excited atoms have a thermal velocity distribution in equilibrium with the surface temperature. Measurements of the absolute yield of excited atoms, the distribution of population among the excited states, and the systematic dependence on incident electron current and sample temperature support a model in which the excited atoms are produced by gas-phase collisions between desorbed ground-state atoms and secondary electrons. In contrast, for the case of ion bombardment, the excited atoms are directly sputtered from the surface, with velocity distributions characteristic of a collision cascade, and with typical energies of --10 eV

Co-sputtered optical films

Energy Technology Data Exchange (ETDEWEB)

Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

1977-06-01

The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

The effect of energy and momentum transfer during magnetron sputter deposition of yttrium oxide thin films

Science.gov (United States)

Xia, Jinjiao; Liang, Wenping; Miao, Qiang; Depla, Diederik

2018-05-01

The influence of the ratio between the energy and the deposition flux, or the energy per arriving atom, on the growth of Y2O3 sputter deposited thin films has been studied. The energy per arriving atom has been varied by the adjustment of the discharge power, and/or the target-to-substrate distance. The relationship between the energy per arriving atom and the phase evolution, grain size, microstructure, packing density and residual stress was investigated in detail. At low energy per arriving atom, the films consist of the monoclinic B phase with a preferential (1 1 1) orientation. A minority cubic C phase appears at higher energy per arriving atom. A study of the thin film cross sections showed for all films straight columns throughout the thickness, typically for a zone II microstructure. The intrinsic stress is compressive, and increases with increasing energy per atom. The same trend is observed for the film density. Simulations show that the momentum transfer per arriving atom also scales with the energy per arriving atom. Hence, the interpretation of the observed trends as a function of the energy per arriving atom must be treated with care.

Evolution of film temperature during magnetron sputtering

International Nuclear Information System (INIS)

Shaginyan, L.R.; Han, J.G.; Shaginyan, V.R.; Musil, J.

2006-01-01

We report on the results of measurements of the temperature T F surf which developed on the surface of films deposited by magnetron sputtering of chromium and copper targets on cooling and non-cooling silicon substrates. The T F surf and substrate temperature (T s ) were simultaneously measured using high-resolution IR camera and thermocouple, respectively. We revealed that the T F surf steeply grows, keeps constant when it achieves saturation level, and rapidly drops to the value of the T s after stopping the deposition. At the same time, the T s either does not change for the case of cooling substrate or increases to a certain level for noncooling substrate. However, in both cases the T s remains several times lower than the T F surf . The T F surf is proportional to the flux of energy delivered to the growth surface by sputtered atoms and other fast particles, weakly depends on the depositing metal and can achieve several hundreds of deg. C. This phenomenon is explained by a model assuming formation of a hot thin surface layer (HTSL) on the top of the growing film, which exists only during film deposition and exhibits extremely low thermal conductivity. Due to this unique property the temperature T F surf of HTSL is several times higher than the T s . Variations in the T F surf fairly correlate with structure changes of Cr films along thickness investigated in detail previously

Multilayer DLC coatings via alternating bias during magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Li Fengji [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Zhang, Sam, E-mail: msyzhang@ntu.edu.sg [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore); Kong Junhua [School of Materials Science and Engineering, Nanyang Technological University (Singapore); Zhang Yujuan [Key Laboratory of Special Functional Material, Henan University (China); Zhang Wali [School of Mechanical and Aerospace Engineering, Nanyang Technological University (Singapore)

2011-05-31

To combat the high residual stress problem in monolayer diamond-like carbon coatings, this paper fabricated multilayer diamond-like carbon coatings with alternate soft and hard layers via alternating bias during magnetron sputtering. The surface, cross sectional morphology, bonding structures and mechanical properties are investigated. The atomic force microscopy images indicate low bias results in rougher surface with large graphite clusters and voids suggesting low coating density. The multilayered coatings demonstrate relatively smooth surface stemming from higher bias. The cross sectional images from field emission scanning electron microscopy indicate coating thickness decreases as substrate bias increases and confirm that higher bias results in denser coating. Delamination is observed in monolayer coatings due to high residual stress. The trend of sp{sup 3}/sp{sup 2} fraction estimated by X-ray photoelectron spectroscopy is consistent with that of I{sub D}/I{sub G} ratios from Raman spectra, indicating the change of bonding structure with change of substrate bias. Hardness of multilayer diamond-like carbon coating is comparable to the coatings deposited at low constant bias but the adhesion strength and toughness are significantly improved. Alternately biased sputtering deposition provides an alternative when combination of hardness, toughness and adhesion strength is needed in an all diamond-like carbon coating.

Laser sputtering. Pt. 1

International Nuclear Information System (INIS)

Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

1985-01-01

Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

Measurement of the force on microparticles in a beam of energetic ions and neutral atoms

International Nuclear Information System (INIS)

Trottenberg, Thomas; Schneider, Viktor; Kersten, Holger

2010-01-01

The force on microparticles in an energetic ion beam is investigated experimentally. Hollow glass microspheres are injected into the vertically upward directed beam and their trajectories are recorded with a charge-coupled device camera. The net force on the particles is determined by means of the measured vertical acceleration. The resulting beam pressures are compared with Faraday cup measurements of the ion current density and calorimetric measurements of the beam power density. Due to the neutral gas background, the beam consists, besides the ions, of energetic neutral atoms produced by charge-exchange collisions. It is found that the measured composition of the drag force by an ion and a neutral atom component agrees with a beam model that takes charge-exchange collisions into account. Special attention is paid to the momentum contribution from sputtered atoms, which is shown to be negligible in this experiment, but should become measurable in case of materials with high sputtering yields.

Sputtering and inelastic processes

International Nuclear Information System (INIS)

Baranov, I.A.; Tsepelevic, S.O.

1987-01-01

Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

A hybrid electron cyclotron resonance metal ion source with integrated sputter magnetron for the production of an intense Al{sup +} ion beam

Energy Technology Data Exchange (ETDEWEB)

Weichsel, T., E-mail: tim.weichsel@fep.fraunhofer.de; Hartung, U.; Kopte, T. [Fraunhofer Institute for Organic Electronics, Electron Beam and Plasma Technology FEP, 01277 Dresden (Germany); Zschornack, G. [Institute of Solid State Physics, Dresden University of Technology, 01062 Dresden, Germany and Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, Dresden (Germany); Kreller, M.; Philipp, A. [DREEBIT GmbH, 01900 Grossroehrsdorf (Germany)

2015-09-15

A metal ion source prototype has been developed: a combination of magnetron sputter technology with 2.45 GHz electron cyclotron resonance (ECR) ion source technology—a so called magnetron ECR ion source (MECRIS). An integrated ring-shaped sputter magnetron with an Al target is acting as a powerful metal atom supply in order to produce an intense current of singly charged metal ions. Preliminary experiments show that an Al{sup +} ion current with a density of 167 μA/cm{sup 2} is extracted from the source at an acceleration voltage of 27 kV. Spatially resolved double Langmuir probe measurements and optical emission spectroscopy were used to study the plasma states of the ion source: sputter magnetron, ECR, and MECRIS plasma. Electron density and temperature as well as Al atom density were determined as a function of microwave and sputter magnetron power. The effect of ECR heating is strongly pronounced in the center of the source. There the electron density is increased by one order of magnitude from 6 × 10{sup 9} cm{sup −3} to 6 × 10{sup 10} cm{sup −3} and the electron temperature is enhanced from about 5 eV to 12 eV, when the ECR plasma is ignited to the magnetron plasma. Operating the magnetron at constant power, it was observed that its discharge current is raised from 1.8 A to 4.8 A, when the ECR discharge was superimposed with a microwave power of 2 kW. At the same time, the discharge voltage decreased from about 560 V to 210 V, clearly indicating a higher plasma density of the MECRIS mode. The optical emission spectrum of the MECRIS plasma is dominated by lines of excited Al atoms and shows a significant contribution of lines arising from singly ionized Al. Plasma emission photography with a CCD camera was used to prove probe measurements and to identify separated plasma emission zones originating from the ECR and magnetron discharge.

Atomically flat platinum films grown on synthetic mica

Science.gov (United States)

Tanaka, Hiroyuki; Taniguchi, Masateru

2018-04-01

Atomically flat platinum thin films were heteroepitaxially grown on synthetic fluorophlogopite mica [KMg3(AlSi3O10)F2] by van der Waals epitaxy. Platinum films deposited on a fluorophlogopite mica substrate by inductively coupled plasma-assisted sputtering with oxygen introduction on a synthetic mica substrate resulted in the growth of twin single-crystalline epitaxial Pt(111) films.

International bulletin on atomic and molecular data for fusion. Nos. 50-51

International Nuclear Information System (INIS)

Botero, J.; Stephens, J.A.

1996-10-01

This bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In part 1 the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths, transition probabilities, oscillator strengths, polarizabilities, electric moments, interatomic potentials); (ii) atomic and molecular collisions (photon collisions, electron collisions, heavy-particle collisions); and (iii) surface interactions (sputtering, chemical reactions, trapping and detrapping, adsorption, desorption, reflection, and secondary electron emission). Part 2 contains the bibliographic data, essentially for the above listed topics

Large Area Sputter Coating on Glass

Science.gov (United States)

Katayama, Yoshihito

Large glass has been used for commercial buildings, housings and vehicles for many years. Glass size for flat displays is getting larger and larger. The glass for the 8th generation is more than 5 m2 in area. Demand of the large glass is increasing not only in these markets but also in a solar cell market growing drastically. Therefore, large area coating is demanded to plus something else on glass more than ever. Sputtering and pyrolysis are the major coating methods on large glass today. Sputtering process is particularly popular because it can deposit a wide variety of materials in good coating uniformity on the glass. This paper describes typical industrial sputtering system and recent progress in sputtering technology. It also shows typical coated glass products in architectural, automotive and display fields and comments on their functions, film stacks and so on.

Quantitative atom column position analysis at the incommensurate interfaces of a (PbS)1.14NbS2 misfit layered compound with aberration-corrected HRTEM

International Nuclear Information System (INIS)

Garbrecht, M.; Spiecker, E.; Tillmann, K.; Jaeger, W.

2011-01-01

Aberration-corrected HRTEM is applied to explore the potential of NCSI contrast imaging to quantitatively analyse the complex atomic structure of misfit layered compounds and their incommensurate interfaces. Using the (PbS) 1.14 NbS 2 misfit layered compound as a model system it is shown that atom column position analyses at the incommensurate interfaces can be performed with precisions reaching a statistical accuracy of ±6 pm. The procedure adopted for these studies compares experimental images taken from compound regions free of defects and interface modulations with a structure model derived from XRD experiments and with multi-slice image simulations for the corresponding NCSI contrast conditions used. The high precision achievable in such experiments is confirmed by a detailed quantitative analysis of the atom column positions at the incommensurate interfaces, proving a tetragonal distortion of the monochalcogenide sublattice. -- Research Highlights: → Quantitative aberration-corrected HRTEM analysis of atomic column positions in (PbS) 1.14 NbS 2 misfit layered compound reveals tetragonal distortion of the PbS subsystem. → Detailed comparison of multi-slice simulations with the experimental NCSI contrast condition imaging results lead to a high precision (better than 10 pm) for determining the positions of atoms. → Precision in gaining information of local structure at atomic scale is demonstrated, which may not be accessible by means of X-ray and neutron diffraction analysis.

Low-temperature sputtering of crystalline TiO2 films

International Nuclear Information System (INIS)

Musil, J.; Herman, D.; Sicha, J.

2006-01-01

This article reports on the investigation of reactive magnetron sputtering of transparent, crystalline titanium dioxide films. The aim of this investigation is to determine a minimum substrate surface temperature T surf necessary to form crystalline TiO 2 films with anatase structure. Films were prepared by dc pulsed reactive magnetron sputtering using a dual magnetron operating in bipolar mode and equipped with Ti(99.5) and ceramic Ti 5 O 9 targets. The films were deposited on unheated glass substrates and their structure was characterized by x-ray diffraction and surface morphology by atomic force microscopy. Special attention is devoted to the measurement of T surf using thermostrips pasted to the glass substrate. It was found that (1) T surf is considerably higher (approximately by 100 deg. C or more) than the substrate temperature T s measured by the thermocouple incorporated into the substrate holder and (2) T surf strongly depends on the substrate-to-target distance d s-t , the magnetron target power loading, and the thermal conductivity of the target and its cooling. The main result of this study is the finding that (1) the crystallization of sputtered TiO 2 films depends not only on T surf but also on the total pressure p T of sputtering gas (Ar+O 2 ), partial pressure of oxygen p O 2 , the film deposition rate a D , and the film thickness h (2) crystalline TiO 2 films with well developed anatase structure can be formed at T surf =160 deg. C and low values of a D ≅5 nm/min (3) the crystalline structure of TiO 2 film gradually changes from (i) anatase through (ii) anatase+rutile mixture, and (iii) pure rutile to x-ray amorphous structure at T surf =160 deg. C and p T =0.75 Pa when p O 2 decreases and a D increases above 5 nm/min, and (4) crystallinity of the TiO 2 films decreases with decreasing h and T surf . Interrelationships between the structure of TiO 2 film, its roughness, T surf , and a D are discussed in detail. Trends of next development are

Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

Energy Technology Data Exchange (ETDEWEB)

Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

2013-05-01

Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

Atomic oxygen-MoS sub 2 chemical interactions

Energy Technology Data Exchange (ETDEWEB)

Cross, J.B.; Martin, J.A. (Los Alamos National Lab., NM (USA)); Pope, L.E. (Sandia National Labs., Albuquerque, NM (USA)); Koontz, S.L. (National Aeronautics and Space Administration, Johnson Space Center, Houston, TX (USA))

1990-10-01

The present study shows that an O-atom translation energy of 1.5 eV, SO{sub 2} is generated and outgases from an anhydrous MoS{sub 2} surface with an initial reactivity nearly 50% that of kapton. The reaction of atomic oxygen with MoS{sub 2} has little or no translational energy barrier, i.e. thermally generated atomic oxygen reacts as readily as that having 1.5 eV of translational energy. For MoS{sub 2} films sputter-deposited at 50-70deg C, friction measurements showed a high initial friction coefficient (up to 0.25) for MoS{sub 2} surfaces exposed to atomic oxygen, which dropped to the normal low values after several cycles of operation in air and ultrahigh vacuum. For MoS{sub 2} films deposited at 200deg C, the friction coefficient was not affected by the O-atom exposure. (orig.).

Atomic hydrogen cleaning of EUV multilayer optics

Science.gov (United States)

Graham, Samuel, Jr.; Steinhaus, Charles A.; Clift, W. Miles; Klebanoff, Leonard E.; Bajt, Sasa

2003-06-01

Recent studies have been conducted to investigate the use of atomic hydrogen as an in-situ contamination removal method for EUV optics. In these experiments, a commercial source was used to produce atomic hydrogen by thermal dissociation of molecular hydrogen using a hot filament. Samples for these experiments consisted of silicon wafers coated with sputtered carbon, Mo/Si optics with EUV-induced carbon, and bare Si-capped and Ru-B4C-capped Mo/Si optics. Samples were exposed to an atomic hydrogen source at a distance of 200 - 500 mm downstream and angles between 0-90° with respect to the source. Carbon removal rates and optic oxidation rates were measured using Auger electron spectroscopy depth profiling. In addition, at-wavelength peak reflectance (13.4 nm) was measured using the EUV reflectometer at the Advanced Light Source. Data from these experiments show carbon removal rates up to 20 Å/hr for sputtered carbon and 40 Å/hr for EUV deposited carbon at a distance of 200 mm downstream. The cleaning rate was also observed to be a strong function of distance and angular position. Experiments have also shown that the carbon etch rate can be increased by a factor of 4 by channeling atomic hydrogen through quartz tubes in order to direct the atomic hydrogen to the optic surface. Atomic hydrogen exposures of bare optic samples show a small risk in reflectivity degradation after extended periods. Extended exposures (up to 20 hours) of bare Si-capped Mo/Si optics show a 1.2% loss (absolute) in reflectivity while the Ru-B4C-capped Mo/Si optics show a loss on the order of 0.5%. In order to investigate the source of this reflectivity degradation, optic samples were exposed to atomic deuterium and analyzed using low energy ion scattering direct recoil spectroscopy to determine any reactions of the hydrogen with the multilayer stack. Overall, the results show that the risk of over-etching with atomic hydrogen is much less than previous studies using RF discharge cleaning

Advanced capabilities and applications of a sputter-RBS system

International Nuclear Information System (INIS)

Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

1999-01-01

In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

Computer simulation of the self-sputtering of uranium

International Nuclear Information System (INIS)

Robinson, M.T.

1983-01-01

The sputtering of polycrystalline α-uranium by uranium ions of energies below 10 keV has been studied in the binary collision approximation using the computer simulation program marlowe. Satisfactory agreement of the computed sputtering yields with the small amount of available experimental data was achieved using the Moliere interatomic potential, a semilocal inelastic loss function, and a planar surface binding barrier, all with conventional parameters. The model is used to discuss low energy sputtering processes and the energy and angular distributions of the reflected primaries and the sputtered target particles

Reactive dual magnetron sputtering for large area application

International Nuclear Information System (INIS)

Struempfel, J.

2002-01-01

Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

The rf-power dependences of the deposition rate, the hardness and the corrosion-resistance of the chromium nitride film deposited by using a dual ion beam sputtering system

International Nuclear Information System (INIS)

Lim, Jongmin; Lee, Chongmu

2006-01-01

The hexavalent chromium used in chromium plating is so toxic that it is very hazardous to human body and possibly causes cancer in humans. Therefore, it is indispensable to develop an alternative deposition technique. Dependences of the deposition rate, the phases, the hardness, the surface roughness and the corrosion-resistance of CrN x deposited on the high speed steel substrate by using a dual ion beam sputtering system on the rf-power were investigated to see the feasibility of sputtering as an alternative technique for chromium plating. The dual ion beam sputtering system used in this study was designed in such a way as the primary argon ion beam and the secondary nitrogen ion beam are injected toward the target and the substrate, respectively so that the chromium atoms at the chromium target surface may not nearly react with nitrogen atoms. The hardness and the surface roughness were measured by a micro-Vicker's hardness tester and an atomic force microscope (AFM), respectively. X-ray diffraction analyses were performed to identify phases in the films. The deposition rate of CrN x depends more strongly upon the rf-power for argon ion beam than that for nitrogen ion beam. The hardness of the CrN x film is highest when the volume percent of the Cr 2 N phase in the film is highest. Amorphous films are obtained when the rf-power for nitrogen ion beam is much higher than that for argon ion beam. The CrN x film deposited by using the sputtering technique under the optimal condition provides corrosion-resistance comparable to that of the electroplated chromium

International bulletin on atomic and molecular data for fusion. No.2

International Nuclear Information System (INIS)

Beaty, E.C.; Katsonis, K.

1977-10-01

This bulletin deals with atomic and molecular data for fusion (spectroscopic data, atomic and molecular collisions, surface effects, ...). Particular emphasis is given to data applicable to Tokamak devices. A bibliography for the most recent data presented in the document is provided. A description of work in progress and ''Data Requests'' in the fusion field are also mentioned. Numerical data on light ion sputtering yields of first wall materials, electron capture and impact ionization for iron ions colliding with molecular hydrogen and charge exchange between multicharged ions and helium, argon, and, atomic or molecular hydrogen are given

Energy dependence of angular distributions of sputtered particles by ion-beam bombardment at normal incidence

International Nuclear Information System (INIS)

Matsuda, Yoshinobu; Ueda, Yasutoshi; Uchino, Kiichiro; Muraoka, Katsunori; Maeda, Mitsuo; Akazaki, Masanori; Yamamura, Yasunori.

1986-01-01

The angular distributions of sputtered Fe-atoms were measured using the laser fluorescence technique during Ar-ion bombardment for energies of 0.6, 1, 2 and 3 keV at normal incidence. The measured cosine distribution at 0.6 keV progressively deviated to an over-cosine distribution at higher energies, and at 3 keV the angular distribution was an overcosine distribution of about 20 %. The experimental results agree qualitatively with calculations by a recent computer simulation code, ACAT. The results are explained by the competition between surface scattering and the effects of primary knock-on atoms, which tend to make the angular distributions over-cosine and under-cosine, respectively. (author)

Co-sputtered ZnO:Si thin films as transparent conductive oxides

Energy Technology Data Exchange (ETDEWEB)

Faure, C. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Clatot, J. [LRCS, 33 Rue St Leu, F-80039 Amiens (France); Teule-Gay, L.; Campet, G. [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France); Labrugere, C. [CeCaMA, Universite de Bordeaux, ICMCB, 87 avenue du Dr. A. Schweitzer, Pessac, F-33608 (France); Nistor, M. [National Institute for Lasers, Plasmas and Radiation Physics, L22, PO Box MG-36, 77125 Bucharest-Magurele (Romania); Rougier, A., E-mail: rougier@icmcb-bordeaux.cnrs.fr [CNRS, Univ. Bordeaux, ICMCB, UPR 9048, F33600 Pessac (France)

2012-12-01

Silicon doped Zinc Oxide thin films, so-called SZO, were deposited at room temperature on glass and plastic substrates by co-sputtering of ZnO and SiO{sub 2} targets. The influence of the SiO{sub 2} target power supply (from 30 to 75 W) on the SZO thin film composition and crystallinity is discussed. Si/Zn atomic ratio, determined by X-ray microprobe, increases from 1.2 to 8.2 at.%. For Si/Zn ratio equal and lower than 3.9%, SZO (S{sub 3.9}ZO) thin films exhibit the Wurzite structure with the (0 0 2) preferred orientation. Larger Si content leads to a decrease in crystallinity. With Si addition, the resistivity decreases down to 3.5 Multiplication-Sign 10{sup -3} Ohm-Sign {center_dot}cm for SZO thin film containing 3.9 at.% of Si prior to an increase. The mean transmittance of S{sub 3.9}ZO thin film on glass substrate approaches 80% (it is about 90% for the film itself) in the visible range (from 400 to 750 nm). Co-sputtered SZO thin films are suitable candidates for large area transparent conductive oxides. - Highlights: Black-Right-Pointing-Pointer Si doped ZnO thin films by co-sputtering of ZnO and SiO{sub 2} targets. Black-Right-Pointing-Pointer Minimum of resistivity for Si doped ZnO thin films containing 3.9% of Si. Black-Right-Pointing-Pointer Si and O environments by X-ray Photoelectron Spectroscopy.

Quantitative characterization of the atomic-scale structure of oxyhydroxides in rusts formed on steel surfaces

International Nuclear Information System (INIS)

Saito, M.; Suzuki, S.; Kimura, M.; Suzuki, T.; Kihira, H.; Waseda, Y.

2005-01-01

Quantitative X-ray structural analysis coupled with anomalous X-ray scattering has been used for characterizing the atomic-scale structure of rust formed on steel surfaces. Samples were prepared from rust layers formed on the surfaces of two commercial steels. X-ray scattered intensity profiles of the two samples showed that the rusts consisted mainly of two types of ferric oxyhydroxide, α-FeOOH and γ-FeOOH. The amounts of these rust components and the realistic atomic arrangements in the components were estimated by fitting both the ordinary and the environmental interference functions with a model structure calculated using the reverse Monte Carlo simulation technique. The two rust components were found to be the network structure formed by FeO 6 octahedral units, the network structure itself deviating from the ideal case. The present results also suggest that the structural analysis method using anomalous X-ray scattering and the reverse Monte Carlo technique is very successful in determining the atomic-scale structure of rusts formed on the steel surfaces

Comparative analysis of electrophysical properties of ceramic tantalum pentoxide coatings, deposited by electron beam evaporation and magnetron sputtering methods

Science.gov (United States)

Donkov, N.; Mateev, E.; Safonov, V.; Zykova, A.; Yakovin, S.; Kolesnikov, D.; Sudzhanskaya, I.; Goncharov, I.; Georgieva, V.

2014-12-01

Ta2O5 ceramic coatings have been deposited on glass substrates by e-beam evaporation and magnetron sputtering methods. For the magnetron sputtering process Ta target was used. X-ray diffraction measurements show that these coatings are amorphous. XPS survey spectra of the ceramic Ta2O5 coatings were obtained. All spectra consist of well-defined XPS lines of Ta 4f, 4d, 4p and 4s; O 1s; C 1s. Ta 4f doublets are typical for Ta2O5 coatings with two main peaks. Scanning electron microscopy and atomic force microscopy images of the e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have revealed a relatively flat surface with no cracks. The dielectric properties of the tantalum pentoxide coatings have been investigated in the frequency range of 100 Hz to 1 MHz. The electrical behaviour of e-beam evaporated and magnetron sputtered Ta2O5 ceramic coatings have also been compared. The deposition process conditions principally effect the structure parameters and electrical properties of Ta2O5 ceramic coatings. The coatings deposited by different methods demonstrate the range of dielectric parameters due to the structural and stoichiometric composition changes

Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

International Nuclear Information System (INIS)

Hezam, M.; Tabet, N.; Mekki, A.

2010-01-01

ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

Optimal series-parallel connection method of dye-sensitized solar cell for Pt thin film deposition using a radio frequency sputter system

Energy Technology Data Exchange (ETDEWEB)

Choi, Jin-Young; Hong, Ji-Tae; Seo, Hyunwoong; Kim, Mijeong; Son, Min-Kyu; Lee, Kyoung-Jun [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of); Lee, Dong-Yoon [Advanced Materials and Application research Laboratory, Korea Electrotechnology Research Institute, 28-1, Seongju-dong, Changwon-city, Kyongnam, 641-120 (Korea, Republic of); Kim, Hee-Je [Department of Electrical Engineering, Pusan National University Jangjeon-dong, Geumjeong-gu, Busan 609-735 (Korea, Republic of)], E-mail: heeje@pusan.ac.kr

2008-11-28

The counter electrode widely used in DSC (Dye-sensitized solar cells) is constructed of a conducting glass substrate coated with a Pt film, in which the platinum acts as a catalyst. The characteristics of the platinum electrode depend strongly on the fabrication process and the electrode's surface condition. In this study, Pt counter electrodes were deposited by radio frequency (RF) sputtering with 6.7 x 10{sup -1} Pa Ar, RF power of 120 W and substrate temperature of 100 deg. C . The surface morphology of Pt electrodes was investigated using field emission scanning electron microscopy and atomic force microscopy. Comparison of samples prepared by RF sputtering and RF magnetron sputtering showed that the surface of the RF sputter deposited electrode had a larger surface area resulting in more effective catalytic characteristics. Finally, an open voltage of 4.8 V, a short circuit current of 569 mA and a photoelectric conversion efficiency of approximately 3.6% were achieved for cells composed of 30 DSC units of 6 cm x 4 cm DSC units with 6 cells in series and 5 cells in parallel.

International bulletin on atomic and molecular data for fusion. No. 54-55

International Nuclear Information System (INIS)

Stephens, J.A.

1998-12-01

This bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In the first part the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths, transition probabilities, oscillator strengths, polarizabilities, electric moments, interatomic potentials), (ii) atomic and molecular collisions (photon collisions, electron collisions, heavy-particle collisions), and (iii) surface interactions (sputtering, chemical reactions, trapping and detrapping, adsorption, desorption, reflection, and secondary electron emission). There are also chapters with beam-matter interactions and data on interactions of atomic particles with fields. In the second Part contains the bibliographic data, essentially for the above listed topics

Sputtering of a silicon surface: Preferential sputtering of surface impurities

Czech Academy of Sciences Publication Activity Database

Nietiadi, M.L.; Rosandi, Y.; Lorinčík, Jan; Urbassek, H.M.

-, č. 303 (2013), s. 205-208 ISSN 0168-583X Institutional support: RVO:67985882 Keywords : Sputtering * Molecular dynamics * SIMS Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 1.186, year: 2013

Survey of atomic and molecular data needs for fusion

International Nuclear Information System (INIS)

Lorenz, A.; Phillips, J.; Schmidt, J.J.; Lemley, J.R.

1976-01-01

Atomic and molecular data needs in five areas of plasma research and fusion technology are considered: Injection Systems (plasma heating by neutral particle beam injection and particle cluster beam injection); Plasma-Surface Interaction (sputtering, absorption, adsorption, reflection, evaporation, surface electron emission, interactions of atomic hydrogen isotopes, synchrotron radiation); Plasma Impurities and Cooling (electron impact ionization and excitation, recombination processes, charge exchange, reflection of H from wall surfaces); Plasma Diagnostics (atomic structure and transition probabilities, X-ray wave-length shift for highly ionized metals, electron capture collisions with H + and D + , heavy-ion collision ionization probe, photon scattering, emission spectroscopy); Laser-fusion Compression (microexplosion physics, diagnostics, microtarget design, laser systems requirements, laser development, reactor design needs)

Evolution of atomic-scale surface structures during ion bombardment: A fractal simulation

International Nuclear Information System (INIS)

Shaheen, M.A.; Ruzic, D.N.

1993-01-01

Surfaces of interest in microelectronics have been shown to exhibit fractal topographies on the atomic scale. A model utilizing self-similar fractals to simulate surface roughness has been added to the ion bombardment code TRIM. The model has successfully predicted experimental sputtering yields of low energy (less then 1000 eV) Ar on Si and D on C using experimentally determined fractal dimensions. Under ion bombardment the fractal surface structures evolve as the atoms in the collision cascade are displaced or sputtered. These atoms have been tracked and the evolution of the surface in steps of one monolayer of flux has been determined. The Ar--Si system has been studied for incidence energies of 100 and 500 eV, and incidence angles of 0 degree, 30 degree, and 60 degree. As expected, normally incident ion bombardment tends to reduce the roughness of the surface, whereas large angle ion bombardment increases the degree of surface roughness. Of particular interest though, the surfaces are still locally self-similar fractals after ion bombardment and a steady state fractal dimension is reached, except at large angles of incidence

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

Directory of Open Access Journals (Sweden)

Claudiu V. Falub

2017-05-01

Full Text Available Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8” Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100 nm thick magnetic layers and (2-20 nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ∼(7-120 Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency, while the coercivity was kept low, ∼(0.05-0.9 Oe. The alignment of the easy axis (EA on the 8” wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM, X-ray reflectivity (XRR with reciprocal space mapping (RSM and magneto-optical Kerr effect (MOKE measurements.

Fabrication of electrocatalytic Ta nanoparticles by reactive sputtering and ion soft landing

Energy Technology Data Exchange (ETDEWEB)

Johnson, Grant E.; Moser, Trevor; Engelhard, Mark; Browning, Nigel D.; Laskin, Julia

2016-11-07

About 40 years ago, it was shown that tungsten carbide exhibits similar catalytic behavior to Pt for certain commercially relevant reactions, thereby suggesting the possibility of cheaper and earth-abundant substitutes for costly and rare precious metal catalysts. In this work, reactive magnetron sputtering of Ta in the presence of three model hydrocarbons (2-butanol, heptane, and m-xylene) combined with gas aggregation and ion soft landing was employed to prepare organic-inorganic hybrid nanoparticles (NPs) on surfaces for evaluation of catalytic activity and durability. The electro-catalytic behavior of the NPs supported on glassy carbon was evaluated in acidic aqueous solution by cyclic voltammetry. The Ta-heptane and Ta-xylene NPs were revealed to be active and robust toward promotion of the oxygen reduction reaction, an important process occurring at the cathode in fuel cells. In comparison, pure Ta and Ta-butanol NPs were essentially unreactive. Characterization techniques including atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) were applied to probe how different sputtering conditions such as the flow rates of gases, sputtering current, and aggregation length affect the properties of the NPs. AFM images reveal the focused size of the NPs as well as their preferential binding along the step edges of graphite surfaces. In comparison, TEM images of the same NPs on carbon grids show that they bind randomly to the surface with some agglomeration but little coalescence. The TEM images also reveal morphologies with crystalline cores surrounded by amorphous regions for NPs formed in the presence of 2-butanol and heptane. In contrast, NPs formed in the presence of m-xylene are amorphous throughout. XPS spectra indicate that while the percentage of Ta, C, and O in the NPs varies depending on the sputtering conditions and hydrocarbon employed, the electron binding energies of the elements are similar

Variables affecting simulated Be sputtering yields

Energy Technology Data Exchange (ETDEWEB)

Björkas, C., E-mail: carolina.bjorkas@helsinki.fi; Nordlund, K.

2013-08-15

Since beryllium is a strong candidate for the main plasma-facing material in future fusion reactors, its sputtering behaviour plays an important role in predicting the reactor’s life-time. Consensus about the actual sputtering yields has not yet been achieved, as observations are influenced by experimental method and/or studied sample. In this work, the beryllium sputtering due to deuterium and beryllium self-bombardment is analyzed using molecular dynamics simulations. The main methodological aspects that influence the outcome, such as flux and fluence of the bombardment, are highlighted, and it is shown that the simulated yields also depend on the sample structure and deuterium content.

N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering

OpenAIRE

Kohei Ueno; Eiji Kishikawa; Jitsuo Ohta; Hiroshi Fujioka

2017-01-01

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films...

Krypton-85 storage in sputter-deposited amorphous metals

International Nuclear Information System (INIS)

Tingey, G.L.; McClanahan, E.D.; Lytle, J.M.; Gordon, N.R.; Knoll, R.W.

1982-06-01

After comparing options for storing radioactive krypton gas, the United States Department of Energy selected ion implantation of the gas into a sputter-deposited metal matrix as the reference process. This technique is being developed with pilot-scale testing and further characterization of the deposited product. The process involves implanting krypton atoms into a growing deposit during the sputtering process. An amorphous metal deposit of nominal composition Ni 0 81 La 0 09 Kr 0 10 has been selected for further studies because of the high krypton loading, high sputtering yield, relatively low cost of the metallic components, resistance to corrosion, and stability of the product. The krypton release from this amorphous metal is described as an activated diffusion process which increases linearly with the square root of time. Studies of krypton release rate as a function of temperature were completed and an activation energy for the diffusion of 70 kcal/mole obtained. From these data, we estimated that the krypton release during the first ten years would be 0.5% for a maximum temperature of 350 0 C. The actual release of the krypton during storage was projected to be lower by a factor of 10 7 with the maximum temperature only 220 0 C. Thermal analysis studies show two energy releases occurring with krypton-containing alloys: one associated with recrystallization of the amorphous alloy and a second associated with krypton release. The total energy release between 100 and 800 0 C was less than 50 cal/g. Estimates are given for the cost of operation of the ion implantation process for solidification of the krypton-85 from a 2000-tonne heavy metal/year reprocessing plant. The present value costs, in 1981 dollars including capital and operating costs and assuming a 30-year life, are about $26M for the lifetime of the plant. Annual energy consumption of the process was estimated to be 3.9 M kWh/year

Initial Growth Process of Magnetron Sputtering 321 Stainless Steel Films Observed by Afm

Science.gov (United States)

Jin, Yongzhong; Wu, Wei; Liu, Dongliang; Chen, Jian; Sun, Yali

To investigate the initial morphological evolution of 321 stainless steel (SS) films, we examined the effect of sputtering time on the morphology of 321 SS film. In this study, a group of samples were prepared at nine different sputtering times within 20 s using radio-frequency (r.f.) magnetron sputtering and characterized by atomic force microscopy (AFM). Only globular-like grains were formed on mica substrates within 6 s, whose average grain size is ~ 21-44 nm. Meanwhile, few grains with larger size are subject to settle at the defect sites of mica substrates. At 8 s, we found large columnar crystallites with the average grain size of 61 nm. From 10 to 14 s, islands grew continuously and coalesced in order to form an interconnected structure containing irregular channels or grooves, with a depth of ~ 3.5-5 nm. Up to 16 s, a nearly continuous film was formed and some new globular-like grains were again present on the film. Study of the AFM image at 20 s suggests that the watercolor masking method designed by us is an effective method, by which we can prepare thin films with steps for the measurement of the thickness of continuous thin films. It is also found that the coverage rate of films increases with the increase in sputtering time (from 2 to 16 s). On the other hand, the increase in root mean square (RMS) roughness is much more significant from 6 to 10 s, and there is a maximum value, 2.81 nm at 10 s due to more islands during deposition. However, RMS roughness decreases with the decrease in length and width of channels or grooves from 10 to 16 s. Especially, a lower RMS roughness of 0.73 nm occurs at 16 s, because of the continuous film produced with a large coverage rate of 98.43%.

Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

International Nuclear Information System (INIS)

Anders, Andre

2008-01-01

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

Energy Technology Data Exchange (ETDEWEB)

Sagdeo, P R; Shinde, D D; Misal, J S [Optics and Thin Film Laboratory, Autonagar, BARC-Vizag, Visakhapatnam -530012 (India); Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C, E-mail: nksahoo@barc.gov.i, E-mail: sahoonk@gmail.co [Spectroscopy Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400 085 (India)

2010-02-03

Titania-silica (TiO{sub 2}/SiO{sub 2}) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser ({lambda} = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

Deposition and characterization of titania-silica optical multilayers by asymmetric bipolar pulsed dc sputtering of oxide targets

International Nuclear Information System (INIS)

Sagdeo, P R; Shinde, D D; Misal, J S; Kamble, N M; Tokas, R B; Biswas, A; Poswal, A K; Thakur, S; Bhattacharyya, D; Sahoo, N K; Sabharwal, S C

2010-01-01

Titania-silica (TiO 2 /SiO 2 ) optical multilayer structures have been conventionally deposited by reactive sputtering of metallic targets. In order to overcome the problems of arcing, target poisoning and low deposition rates encountered there, the application of oxide targets was investigated in this work with asymmetric bipolar pulsed dc magnetron sputtering. In order to evaluate the usefulness of this deposition methodology, an electric field optimized Fabry Perot mirror for He-Cd laser (λ = 441.6 nm) spectroscopy was deposited and characterized. For comparison, this mirror was also deposited by the reactive electron beam (EB) evaporation technique. The mirrors developed by the two complementary techniques were investigated for their microstructural and optical reflection properties invoking atomic force microscopy, ellipsometry, grazing incidence reflectometry and spectrophotometry. From these measurements the layer geometry, optical constants, mass density, topography, surface and interface roughness and disorder parameters were evaluated. The microstructural properties and spectral functional characteristics of the pulsed dc sputtered multilayer mirror were found to be distinctively superior to the EB deposited mirror. The knowledge gathered during this study has been utilized to develop a 21-layer high-pass edge filter for radio photoluminescence dosimetry.

Sensitivity and stability of sputtered sandwich photocells

International Nuclear Information System (INIS)

Murray, H.; Piel, A.

1979-01-01

The physical parameters of sputtered Metal-Semiconductor-Metal photocells are described in view of solar energy conversion. Specific properties of sputtered films lead to a particular stability of physical parameters such as dark conduction, capacitance and dielectric losses. Interband transitions occur when the photon energy is larger than the bandgap of the photoconductor. The transport of photo-excited carriers in the built-in electric field involves the existence of a photovoltaic effect. The influence of sputtering on the specific properties of solar energy conversion is discussed. (author)

Quantitative measurement of local elasticity of SiOx film by atomic force acoustic microscopy

International Nuclear Information System (INIS)

Cun-Fu, He; Gai-Mei, Zhang; Bin, Wu

2010-01-01

In this paper the elastic properties of SiO x film are investigated quantitatively for local fixed point and qualitatively for overall area by atomic force acoustic microscopy (AFAM) in which the sample is vibrated at the ultrasonic frequency while the sample surface is touched and scanned with the tip contacting the sample respectively for fixed point and continuous measurements. The SiO x films on the silicon wafers are prepared by the plasma enhanced chemical vapour deposition (PECVD). The local contact stiffness of the tip-SiO x film is calculated from the contact resonance spectrum measured with the atomic force acoustic microscopy. Using the reference approach, indentation modulus of SiO x film for fixed point is obtained. The images of cantilever amplitude are also visualized and analysed when the SiO x surface is excited at a fixed frequency. The results show that the acoustic amplitude images can reflect the elastic properties of the sample. (classical areas of phenomenology)

Theoretical studies of atomic and quasiatomic excitations by electron and ion impact

International Nuclear Information System (INIS)

Kam, K.F.

1999-09-01

Electron emission from ion induced excitations of Ca, Sc, Ti and V metal surfaces and from electron impact on transition metal oxides CoO and TiO 2 has been studied in this thesis. Both the autoionising emission from sputtered atoms and the 3p→3d and 3s→3d excitations in the oxides reveal strong atomic features. The work has involved explaining these spectra in an atomic approach, via the use of atomic structure calculations, cross section studies and empirical/semi-empirical analyses. The other aspect of this work involves extension of current theories of electron-atom scattering in the high electron energy impact regime. Overall it is shown that much can be learned about some solid-state spectra by relating them to atomic phenomena. (author)

International bulletin on atomic and molecular data for fusion. No. 48

International Nuclear Information System (INIS)

1994-10-01

This bulletin provides atomic and molecular data references relevant to thermonuclear fusion research and technology. In part I the indexing of the papers is given separately for (i) structure and spectra (energy levels, wavelengths; transition probabilities, oscillator strengths; interatomic potentials), (ii) atomic and molecular collisions (photon collisions, electron collisions, heavy particle collisions), and (iii) surface interactions (sputtering, surface damage, blistering, flaking, arcing, chemical reactions). Part II contains the bibliographic data for the above listed topics and for plasma composition and impurities, plasma heating, cooling and fuelling, high energy laser- and beam- matter interaction, bibliographic and numerical data collections, and on interaction of atomic particles with fields. Also included are sections on atomic and molecular data needs for fusion research and on news about ALADDIN (A Labelled Atomic Data Interface) and evaluated-data bases

Efficient atomization of cesium metal in solid helium by low energy (10 μJ) femtosecond pulses

Science.gov (United States)

Melich, M.; Dupont-Roc, J.; Jacquier, Ph.

2009-10-01

Metal atoms in solid and liquid helium-4 have attracted some interest either as a way to keep the atoms in a weakly perturbing matrix, or using them as a probe for the helium host medium. Laser sputtering with nanosecond pulsed lasers is the most often used method for atom production, resulting however in a substantial perturbation of the matrix. We show that a much weaker perturbation can be obtained by using femtosecond laser pulses with energy as low as 10 μJ. As an unexpected benefit, the atomic density produced is much higher.

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo

2013-06-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Charge ordering in reactive sputtered (1 0 0) and (1 1 1) oriented epitaxial Fe3O4 films

KAUST Repository

Mi, Wenbo; Guo, Zaibing; Wang, Qingxiao; Yang, Yang; Bai, Haili

2013-01-01

Epitaxial Fe3O4 films with (1 0 0) and (1 1 1) orientations fabricated by reactive sputtering present simultaneous magnetic and electrical transitions at 120 and 124 K, respectively. The symmetry decreases from face-centered cubic to monoclinic structure across the Verwey transition. Extra spots with different brightness at different positions appear in selected-area diffraction patterns at 95 K. The extra spots come from the charge ordering of outer-layer electrons of Fe atoms, and should be related to the charge ordering of octahedral B-site Fe atoms. © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Peculiarities in film growth of ferroelectric complex oxides in ion-plasma sputtering

International Nuclear Information System (INIS)

Mukhortov, V.M.; Golovko, Yu.I.; Mukhortov, Vl.M.; Dudkevich, V.P.

1981-01-01

Experimental investigation into the process of complex oxide film growth (using BaTiO 3 and (Ba,Sr)TiO 3 as an example) during ion-plasma sputtering has been carried out. It is shown that neutral excited atoms are knocked out of a ceramic target during its ion bombardment. Removing from the target they loss energy at the expence of collisions and at some distance hsub(cr) the oxidation reaction (BaO, TiO, TiO 2 , SrO) becomes possible. So the ''construction'' material comes in either in the form of atoms or in the form of molecules of simple oxides depending on a distance between cathode and substrate. Two mechanisms of synthesis and crystallization distinguished with dependences of growth rate, elementary cell parameters and other structure characteristics on precipitation temperature correspond to two precipitation mechanisms. Part of re-evaporation and reduction processes is discussed [ru

Sputtering of two-phase AgxCuγ alloys

International Nuclear Information System (INIS)

Bibic, N.; Milosavljevic, M.; Perusko, D.; Wilson, I.H.

1992-01-01

Elemental sputtering yields from two phase AgCu alloys were measured for 20, 40 and 50 at % Ag. Argon ion bombardment energies were in the range 35-55 keV and the ion dose was 1 x 10 19 ions cm -2 . The sputtering yield for silver was found to be considerably below what was expected by simple selective sputtering of a two component alloy. Analysis by electron probe X-ray microanalysis and scanning electron microscopy of the eroded surface indicated that surface diffusion of copper from copper rich grains and geometrical constraints in the dense cone forest on Cu/Ag eutectic regions combine to reduce the sputtering yield for silver. (author)

Growth mechanism and surface atomic structure of AgInSe{sub 2}

Energy Technology Data Exchange (ETDEWEB)

Pena Martin, Pamela; Rockett, Angus A.; Lyding, Joseph [Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 W. Green St., Urbana, Illinois 61801 (United States); Department of Electrical and Computer Engineering and the Beckman Institute, University of Illinois at Urbana-Champaign, 405 N. Matthews St., Urbana, Illinois 61801 (United States)

2012-07-15

The growth of (112)A-oriented AgInSe{sub 2} on GaAs (111)A and its surface reconstruction were studied by scanning tunneling microscopy, atomic force microscopy, and other techniques. Films were grown by a sputtering and evaporation method. Topographic STM images reveal that the film grew by atomic incorporation into surface steps resulting from screw dislocations on the surface. The screw dislocation density was {approx}10{sup 10} cm{sup 2}. Atomically resolved images also show that the surface atomic arrangement appears to be similar to that of the bulk, with a spacing of 0.35-0.41 nm. There is no observable reconstruction, which is unexpected for a polar semiconductor surface.

Low-damage high-throughput grazing-angle sputter deposition on graphene

Energy Technology Data Exchange (ETDEWEB)

Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

2013-07-15

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Low-damage high-throughput grazing-angle sputter deposition on graphene

International Nuclear Information System (INIS)

Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

2013-01-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

Low-damage high-throughput grazing-angle sputter deposition on graphene

Science.gov (United States)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Influence of surface topography on the sputtering yields of silver

International Nuclear Information System (INIS)

Pan Jisheng; Wang Zhenxia; Tao Zhenlan; Zhang Jiping

1992-01-01

The sputtering yields of silver have been measured as a function of the fluence of incident Ar + ions (27 keV) using the collector technique and RBS analysis. The irradiated surface was examined by scanning electron microscopy (SEM). It is shown that the sputtering yields of surfaces with topography are enhanced relative to smooth surfaces of silver, but the extent of the enhancement depends on the irradiation dose. The experimental results can be explained assuming that the surface topography and sputtering yield are a function of incident angle. It is obvious that the surface topography is an important factor to influence the sputtering yield. The term ''apparent sputtering yield'' has specifically been used when referring to the experimental sputtering yield of a surface with topography, to emphasize the difference with a smooth surface. (orig.)

Effect of working pressure on corrosion behavior of nitrogen doped diamond-like carbon thin films deposited by DC magnetron sputtering.

Science.gov (United States)

Khun, N W; Liu, E

2011-06-01

Nitrogen doped diamond-like carbon thin films were deposited on highly conductive p-silicon(100) substrates using a DC magnetron sputtering deposition system by varying working pressure in the deposition chamber. The bonding structure, adhesion strength, surface roughness and corrosion behavior of the films were investigated by using X-ray photoelectron spectroscopy, micro-Raman spectroscopy, micro-scratch test, atomic force microscopy and potentiodynamic polarization test. A 0.6 M NaCl electrolytic solution was used for the corrosion tests. The optimum corrosion resistance of the films was found at a working pressure of 7 mTorr at which a good balance between the kinetics of the sputtered ions and the surface mobility of the adatoms promoted a microstructure of the films with fewer porosities.

Hard nanocrystalline Zr-B-C-N films with high electrical conductivity prepared by pulsed magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Vlček, J.; Steidl, P.; Kohout, J.; Čerstvý, R.; Zeman, P.; Prokšová, S.; Peřina, Vratislav

2013-01-01

Roč. 215, JAN 25 (2013), s. 186-191 ISSN 0257-8972. [39th International Conference on Metallurgical Coatings and Thin Films (ICMTF). San Diego, California, 23.04.2012-27.04.2012] Institutional support: RVO:61389005 Keywords : Zr-B-C-N films * nanocomposite materials * pulsed magnetron sputtering * hard ness * high electrical conductivity * osidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.199, year: 2013 http://www.sciencedirect.com/science/article/pii/S0257897212010584

Transparent Ga and Zn co-doped In2O3 electrode prepared by co-sputtering of Ga:In2O3 and Zn:In2O3 targets at room temperature

International Nuclear Information System (INIS)

Jeong, Jin-A; Kim, Han-Ki

2011-01-01

This study examined the characteristics of Ga:In 2 O 3 (IGO) co-sputtered Zn:In 2 O 3 (IZO) films prepared by dual target direct current (DC) magnetron sputtering at room temperature in a pure Ar atmosphere for transparent electrodes in IGZO-based TFTs. Electrical, optical, structural and surface properties of Ga and Zn co-doped In 2 O 3 (IGZO) electrodes were investigated as a function of IGO and IZO target DC power during the co-sputtering process. Unlike semiconducting InGaZnO 4 films, which were widely used as a channel layer in the oxide TFTs, the co-sputtered IGZO films showed a high transmittance (91.84%) and low resistivity (4.1 x 10 -4 Ω cm) at optimized DC power of the IGO and IZO targets, due to low atomic percent of Ga and Zn elements. Furthermore, the IGO co-sputtered IZO films showed a very smooth and featureless surface and an amorphous structure regardless of the IGO and IZO DC power due to the room temperature sputtering process. This indicates that co-sputtered IGZO films are a promising S/D electrode in the IGZO-based TFTs due to their low resistivity, high transmittance and same elements with channel InGaZnO 4 layer.

Magnetron sputtered Hf-B-Si-C-N films with controlled electrical conductivity and optical transparency, and with ultrahigh oxidation resistance

Czech Academy of Sciences Publication Activity Database

Šímová, V.; Vlček, J.; Zuzjaková, Š.; Houška, J.; Shen, Y.; Jiang, J. C.; Meletis, E. I.; Peřina, Vratislav

2018-01-01

Roč. 653, č. 5 (2018), s. 333-340 ISSN 0040-6090 R&D Projects: GA MŠk LM2015056 Institutional support: RVO:61389005 Keywords : Hf-B-Si-C-N films * pulsed reactive magnetron sputtering * electrical conductivitiy * optical transparency * high-temperature oxidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders OBOR OECD: Nuclear physics Impact factor: 1.879, year: 2016

Tests of a new axial sputtering technique in an ECRIS

International Nuclear Information System (INIS)

Scott, R.; Pardo, R.; Vondrasek, R.

2012-01-01

Axial and radial sputtering techniques have been used over the years to create beams from an ECRIS at multiple accelerator facilities. Operational experience has shown greater beam production when using the radial sputtering method versus axial sputtering. At Argonne National Laboratory, previous work with radial sputtering has demonstrated that the position of the sputter sample relative to the plasma chamber wall influences sample drain current, beam production and charge state distribution. The possibility of the chamber wall acting as a ground plane which influences the sputtering of material has been considered, and an attempt has been made to mimic this possible ground plane effect with a coaxial sample introduced from the injection end. Results of these tests will be shown as well as comparisons of outputs using the two methods. The paper is followed by the associated poster. (authors)

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

1993-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

1994-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Atomic-resolution environmental TEM for quantitative in-situ microscopy in materials science.

Science.gov (United States)

Takeda, Seiji; Yoshida, Hideto

2013-02-01

We have compiled our recent in-situ quantitative environmental transmission electron microscopy (ETEM) studies on typical gold nanoparticulate catalysts for the low-temperature oxidation of CO to describe the issues surrounding the application of ETEM, with a special regard to catalyst chemistry. Thanks to the recent development of high-resolution environmental transmission electron microscopes that can work robustly to accumulate observation data in controlled environments, we can deal with the electron irradiation effects and heterogeneity of real catalysts. We established a structural evolution diagram that summarizes the structure of catalysts under electron irradiation as a function of the electron current density ϕ and the electron dose, D. By extrapolating to ϕ = 0, D = 0, we could deduce the intrinsic catalysis structure (without electron irradiation) in various environments, including reaction environments. By numerically and statistically analyzing a substantial number of ETEM images of gold nanoparticles, we established a morphology phase diagram that summarizes how the majority of gold nanoparticles change their morphology systematically as a function of the partial pressures of CO and O(2). Similar diagrams will be helpful in elucidating the phenomena that directly correlate with the catalytic activity determined from ETEM observations. Using these quantitative analyses, we could analyze Cs-corrected ETEM images of the catalysts. The surfaces of gold nanoparticles were structurally reconstructed under reaction conditions, via interactions with CO molecules. CO molecules were observed on the surfaces of catalysts under reaction conditions using high-resolution ETEM. Finally, we discuss the potential of environmental transmission electron microscopy for quantitative in-situ microscopy at the atomic scale.

Ga-doped ZnO films deposited with varying sputtering powers and substrate temperatures by pulsed DC magnetron sputtering and their property improvement potentials

International Nuclear Information System (INIS)

Lee, Sanghun; Cheon, Dongkeun; Kim, Won-Jeong; Ham, Moon-Ho; Lee, Woong

2012-01-01

Ga-doped ZnO (GZO) transparent conductive oxide (TCO) films were deposited on glass substrates by pulsed DC magnetron sputtering with varying sputtering power and substrate temperature while fixing the Ga concentration in the sputtering target. The application of higher sputtering power by pulsed DC magnetrons sputtering at a moderate temperature of 423 K results in increased carrier concentration and mobility which accompanied improved doping efficiency and crystalline quality. Substrate temperature was found to be the more dominant parameter in controlling the electrical properties and crystallinity, while the sputtering power played synergistic auxiliary roles. Electrical and optical properties of the GZO TCO films fulfilled requirements for transparent electrodes, despite relatively low substrate temperature (423 K) and small thickness (100 nm). In an attempt to improve the electrical properties of the GZO films by hydrogen-treatment, it was observed that the substitutional Ga plays the complex role of carrier generator as donor and carrier suppressor deactivating the oxygen vacancy simultaneously, which would complicate the property improvement by increasing doping efficiency.

Hyperthermal (10-500 eV) collisions of noble gases with Ni(100) surface. Comparison between light and heavy atom collisions

International Nuclear Information System (INIS)

Kim, C.

1995-01-01

Collisional events between 10-500 eV atomic beams (He, Ne, Ar, Kr, and Xe) and a Ni(100) surface are investigated by the classical trajectory method. The calculation employs a molecular dynamics approach combined with a Langevin method for treating energy dissipation to infinite solid. We find that low energy collisions of heavy atoms (Xe and Kr) are characterized by extensive many-body interactions with top layer surface atoms. On the other hand, light atom (Ne and He) collisions can be approximated as a sequence of binary collisions even at these energies. Such a difference in the collisional nature gives rise to the following consequences. Low energy heavy atoms transfer energy mostly to the surface atoms during 45 angle collision. They scatter from the surface with a narrow angular distribution centered in a supraspecular direction. The ratio of the scattered to incident particle energy rapidly decreases with increasing beam energy of heavy atoms. The sputtering yield for Ni atoms by heavy atom bombardment increases quite linearly with beam energy, which is attributed to a linear proportionality between the beam energy and the energy transfered to a surface. Near the threshold energy sputtering can occur more efficiently by light atom bombardment. The energy transfer ratio to solid continuously increases with beam energy for light atoms. For heavy projectiles, on the other hand, this ratio reaches a maximum at the energy of ca, 100 eV, above which it stays nearly constant but slightly decreases. ((orig.))

Laterally resolved ion-distribution functions at the substrate position during magnetron sputtering of indium-tin oxide films

International Nuclear Information System (INIS)

Plagemann, A.; Ellmer, K.; Wiesemann, K.

2007-01-01

During the magnetron sputtering from an indium-tin oxide (ITO) target (76 mm diameter) we measured the ion-distribution functions (IDFs) of energetic ions (argon, indium, and oxygen ions) at the substrate surface using a combination of a quadrupole mass spectrometer and an electrostatic energy analyzer. We obtained the IDFs for argon sputtering pressures in the range from 0.08 to 2 Pa and for dc as well as rf (13.56 MHz) plasma excitation with powers from 10 to 100 W. The IDF measurements were performed both over the target center at a target-to-substrate distance of 65 mm and at different positions along the target radius in order to scan the erosion track of the target. The mean kinetic energies of argon ions calculated from the IDFs in the dc plasma decreased from about 30 to 15 eV, when the argon pressure increased from 0.08 to 2 Pa, which is caused by a decrease of the electron temperature also by a factor of 2. Indium atoms exhibit higher mean energies due to their additional energy from the sputtering process. The total metal ion flux turns out to be proportional to the discharge power and the pressure, the latter dependence being due to Penning ionization of the metal atoms (In and Sn). From the scans across the target surface the lateral distributions of metal, oxygen, and argon ions were derived. In the dc discharge the position of the erosion track is reproduced by increased ion intensities, while it is not the case for the rf excited plasma. The lateral variations of the observed species do not influence the lateral resistivity distributions of the deposited ITO films

The Kansas State University revolving sputter source

International Nuclear Information System (INIS)

Tipping, T.N.

1989-01-01

It has been that the perfect ion source is one which runs in a very stable mode, runs continuously, and has the ability to change ion species without sacrificing the previous two requirements. This paper presents an approximation to the perfect ion source, the KSU Revolving Sputter Source. The source consists of an Aarhus-geometry sputter source with the addition of a rotating wheel which holds eight sputter cathodes. The wheel consists of a front plate with eight fixed Macor insulators and a back plate with eight Macor insulators held in place by the tension of eight springs. The cathode assembly consists of a copper cartridge with a threaded rod on one end and a sputter cathode with a threaded hole on the back. The cathode is screwed onto the cartridge and the whole assembly may be loaded into the wheel. A small spring on the side of the cartridge holds the assembly in the wheel

Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

Institute of Scientific and Technical Information of China (English)

ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

2012-01-01

Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ～0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

Quantitation of stable isotopic tracers of calcium by fast atom bombardment mass spectrometry

International Nuclear Information System (INIS)

Jiang, X.; Smith, D.L.

1987-01-01

Instrumentation and methodology developed for quantitation of stable isotopic traces in urine are described. Calcium is isolated from urine as the insoluble oxalate salt which is subsequently dissolved in hydrochloric acid. The isotopic content of the acid solution is determined by use of a conventional mass spectrometer equipped with a fast atom bombardment ion source. Calcium ions are desorbed from the sample surface by a beam of high-energy xenon atoms and detected with a high-resolution mass spectrometer. A data acquisition system has been developed to control the mass spectrometer and record the ion signals. Detailed analysis of potential sources of error indicates that the precision of the method is presently limited primarily by an isotope effect that occurs during ion desorption. Results presented here demonstrate that the relative abundances of calcium isotopes in urine can be determined with high precision (coefficient of variation < 0.2%) and that the method is a viable alternative to conventional thermal ionization mass spectrometry. The method is especially attractive because it uses a conventional high-resolution mass spectrometer which is routinely used for analysis of organic substances

High power pulsed magnetron sputtering of transparent conducting oxides

International Nuclear Information System (INIS)

Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

2008-01-01

High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

Faraday screen sputtering on TPX

International Nuclear Information System (INIS)

Ehst, D.A.

1994-12-01

The TPX design stipulates that the ion-cyclotron resonance frequency (ICRF) antenna must have a Faraday screen (FS). The author considers here possible low Z coatings for the screen, as well as sputtering behavior of the Ni and Ti substrates. The theory of rf-induced sputtering has been developed, and he follows those theoretical approaches. The author's emphasis will be on both impurity generation as a possible source of increased Z eff , and also on actual erosion-lifetime of the materials under worst case conditions

Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

International Nuclear Information System (INIS)

Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

2005-01-01

A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

Study of uranium dioxyde sputtering induced by multicharged heavy ions at low and very low kinetic energy: projectile charge effect; Etude de la pulverisation du dioxyde d'uranium induite par des ions lourds multicharges de basse et tres basse energie cinetique; effet de la charge du projectile

Energy Technology Data Exchange (ETDEWEB)

Haranger, F

2003-12-01

Ion beam irradiation of a solid can lead to the emission of neutral or ionized atoms, molecules or clusters from the surface. This comes as a result of the atomic motion in the vicinity of the surface, induced by the transfer of the projectile energy. Then, the study of the sputtering process appears as a means to get a better understanding of the excited matter state around the projectile trajectory. In the case of slow multicharged ions, a strong electronic excitation can be achieved by the projectile neutralization above the solid surface and / or its deexcitation below the surface. Parallel to this, the slowing down of such ions is essentially related to elastic collision with the target atoms. The study of the effect of the initial charge state of slow multicharged ions, in the sputtering process, has been carried out by measuring the absolute angular distributions of emission of uranium atoms from a uranium dioxide surface. The experiments have been performed in two steps. First, the emitted particles are collected onto a substrate during irradiation. Secondly, the surface of the collectors is analyzed by Rutherford Backscattering Spectrometry (RBS). This method allows the characterization of the emission of neutrals, which are the vast majority of the sputtered particles. The results obtained provide an access to the evolution of the sputtering process as a function of xenon projectile ions charge state. The measurements have been performed over a wide kinetic energy range, from 81 down to 1.5 keV. This allowed a clear separation of the contribution of the kinetic energy and initial projectile charge state to the sputtering phenomenon. (author)

Pulsed dc self-sustained magnetron sputtering

International Nuclear Information System (INIS)

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

2008-01-01

The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

Sputtering and mixing of supported nanoparticles

International Nuclear Information System (INIS)

Jiménez-Sáez, J.C.; Pérez-Martín, A.M.C.; Jiménez-Rodríguez, J.J.

2013-01-01

Sputtering and mixing of Co nanoparticles supported in Cu(0 0 1) under 1-keV argon bombardment are studied using molecular-dynamics simulations. Particles of different initial size have been considered. The cluster height decreases exponentially with increasing fluence. In nanoparticles, sputtering yield is significantly enhanced compared to bulk. In fact, the value of this magnitude depends on the cluster height. A theoretical model for sputtering is introduced with acceptable results compared to those obtained by simulation. Discrepancies happen mainly for very small particles. Mixing rate at the interface is quantified; and besides, the influence of border effects for clusters of different initial size is assessed. Mixing rate and border length–surface area ratio for the initial interface show a proportionality relation. The phenomenon of ion-induced burrowing of metallic nanoparticles is analysed

Effects of oxygen partial pressure on structural and gasochromic properties of sputtered VOx thin films

Energy Technology Data Exchange (ETDEWEB)

Jang, Wei-Luen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Lu, Yang-Ming [Department of Electrical Engineering, National University of Tainan, Tainan 70005, Taiwan (China); Lu, Ying-Rui [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Program for Science and Technology of Accelerator Light Source, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Chi-Liang [Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China); Dong, Chung-Li, E-mail: dong.cl@nsrrc.org.tw [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Chou, Wu-Ching [Department of Electrophysics, National Chiao Tung University, Hsinchu 30010, Taiwan (China); Chen, Jeng-Lung; Chan, Ting-Shan; Lee, Jyh-Fu; Pao, Chih-Wen [National Synchrotron Radiation Research Center (NSRRC), Hsinchu 30076, Taiwan (China); Hwang, Weng-Sing [Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China)

2013-10-01

VOx films were deposited by radio-frequency reactive magnetron sputtering from a vanadium target in an Ar–O{sub 2} gas mixture and pure O{sub 2}. For the films deposited in the gas mixture, the Ar flow rate was controlled at 20 sccm and the oxygen flow rate was controlled at 1, 3, and 5 sccm, respectively. A thin (∼ 5 nm) Pt layer was deposited on the VOx thin films as a hydrogen catalyst. The long-range structural order, short-range atom arrangement, and gasochromic properties of the deposited films were studied. The grazing incidence X-ray diffraction (GIXRD) results indicate that the deposited films are amorphous. Lamellar structures were found at oxygen flow rates of 3 sccm and above. The X-ray absorption spectroscopy (XAS) results show that the short-range atom arrangement of the lamellar VOx thin films is similar to that of crystal V{sub 2}O{sub 5}. The GIXRD and XAS results show that the film obtained with the gas mixture and at an oxygen flow rate of 1 sccm did not significantly change after exposure to hydrogen, whereas the other films exhibited decreased interlayer distance, oxidation state, and crystallinity. The color of the films changed from light or deep yellow to gray. The results suggest that the gasochromic properties of the VOx thin films are related to the V{sub 2}O{sub 5}-like atom arrangement and the interlayer distance of the lamellar structure. The films deposited with an oxygen flow rate of 3 sccm and above can be applied to H{sub 2} gas sensors. - Highlights: • Sputtered VOx film capped by Pt have potential for application in hydrogen sensor. • We present the X-ray absorption spectroscopy study of the gasochromic VOx films. • Correlation of gasochromism and electronic structure of VOx film were studied. • Correlation of gasochromism and atomic structure were investigated.

Sputtering of neutral and ionic indium clusters

International Nuclear Information System (INIS)

Ma, Z.; Coon, S.R.; Calaway, W.F.; Pellin, M.J.; Gruen, D.M.; Von Nagy-Felsobuki, E.I.

1993-01-01

Secondary neutral and secondary ion cluster yields were measured during the sputtering of a polycrystalline indium surface by normally incident ∼4 keV Ar + ions. In the secondary neutral mass spectra, indium clusters as large as In 32 were observed. In the secondary ion mass spectra, indium clusters up to In 18 + were recorded. Cluster yields obtained from both the neutral and ion channel exhibited a power law dependence on the number of constituent atoms, n, in the cluster, with the exponents measured to be -5.6 and -4. 1, respectively. An abundance drop was observed at n=8, 15, and 16 in both the neutral and ion yield distributions suggesting that the stability of the ion (either secondary ion or photoion) plays a significant role in the observed distributions. In addition, our experiments suggest that unimolecular decomposition of the neutral cluster may also plays an important role in the measured yield distributions

Sputtering of vanadium and niobium under 14.1 MeV neutron impact

International Nuclear Information System (INIS)

Kaminsky, M.; Das, S.K.

1976-01-01

The recent studies of particle emission from cold-rolled and annealed niobium under 14.1-MeV neutron impact were extended to a heavily etched, polycrystalline niobium surface and to cold worked vanadium surfaces with different degrees of microstructure. The type and amount of material released and deposited on collector surfaces facing the irradiated targets were determined by three analytical techniques. Two types of deposits were found for certain types of surfaces--one in the form of chunks; the other as a fractional atom layer covering the surface. The chunks vary significantly in size. The small number of chunks observed suggests that the ejection of chunks is a relatively rare event in comparison to the total number of primary knock-on events produced by 14-MeV neutrons in near surface regions. Estimates of the total sputtering yield based on the chunk deposits and on the fractional atom layer deposit will be given

Substrate heating and cooling during magnetron sputtering of copper target

Energy Technology Data Exchange (ETDEWEB)

Shapovalov, Viktor I.; Komlev, Andrey E.; Bondarenko, Anastasia S., E-mail: stopnastia@gmail.com; Baykov, Pavel B.; Karzin, Vitaliy V.

2016-02-22

Heating and cooling processes of the substrate during the DC magnetron sputtering of the copper target were investigated. The sensitive element of a thermocouple was used as a substrate. It was found, that the heat outflow rate from the substrate is lower when the magnetron is turned off rather than when it is turned on. Furthermore, the heating rate, the ultimate temperature, and the heat outflow rate related to the deposition of copper atoms are directly proportional to the discharge current density. - Highlights: • New effect of heat outflow from substrate when magnetron is on was discovered. • This new effect is linear in terms of heat outflow rate to target current ratio. • Kinetic equation for heating process additively considers this effect.

On the synthesis of a compound with positive enthalpy of formation: Zinc-blende-like RuN thin films obtained by rf-magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Cattaruzza, E., E-mail: cattaruz@unive.it [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Battaglin, G.; Riello, P. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice, Via Torino 155/B, 30172 Mestre-VE (Italy); Cristofori, D. [Department of Molecular Sciences and Nanosystems, Ca’ Foscari University of Venice and Centre for Electron Microscopy “Giovanni Stevanato”, Via Torino 155/B, 30172 Mestre-VE (Italy); Tamisari, M. [Department of Physics and Earth Sciences, University of Ferrara, Via Saragat 1, 44121 Ferrara (Italy)

2014-11-30

Highlights: • RuN thin films in the zinc-blende structure have been synthesized by rf-magnetron sputtering. • Contribute is given to the understanding of phase-formation mechanisms in systems that under ambient conditions present positive enthalpies of formation. • Contribute is given to the understanding of phenomena occurring during reactive sputtering processes. • Nanopillar structure: suitable for application requiring a high effective area, like sensing, catalysis, and electrode material for energy-storage devices. - Abstract: 4d- and 5d-transition metal nitrides are of interest both because of their importance for the understanding of mechanisms of phase formation in systems that under ambient conditions present positive enthalpies of formation and because of their appealing structural and electronic properties. In this study, we report the synthesis of thin films of ruthenium mononitride (RuN) in the zinc-blende structure by radio-frequency-magnetron sputtering. Films present a characteristic structure of packed columns ending with tetrahedral tips. The effect of changing the synthesis parameters was investigated in detail. It was found that RuN can be formed if the nitrogen partial pressure exceeds a minimum value and that the addition of argon has the major effect of increasing the deposition rate because of its higher sputter ability. Temperature plays an important role: if it is too high, decomposition/desorption effects overcome those leading to the formation of the compound. Phenomena resulting in the formation of RuN occur at the surface of the growing films and are related to the interactions of ruthenium with energetic nitrogen ions, or atoms, which can penetrate the first atomic layers by low energy implantation. Because of its properties and structure, this material is a promising candidate for applications like sensing, catalysis, and electrode material for energy-storage devices.

Efficient atomization of cesium metal in solid helium by low energy (10 $\\mu$J) femtosecond pulses

OpenAIRE

Melich, Mathieu; Dupont-Roc, Jacques; Jacquier, Philippe

2009-01-01

International audience; Metal atoms in solid and liquid helium-4 have attracted some interest either as a way to keep the atoms in a weakly perturbing matrix, or using them as a probe for the helium host medium. Laser sputtering with nanosecond pulsed lasers is the most often used method for atom production, resulting however in a substantial perturbation of the matrix. We show that a much weaker perturbation can be obtained by using femtosecond laser pulses with energy as low as 10 µJ. As an...

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

International Nuclear Information System (INIS)

Yang, Jie; Zhao, Bo; Wang, Chong; Qiu, Feng; Wang, Rongfei; Yang, Yu

2016-01-01

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Improving the growth of Ge/Si islands by modulating the spacing between screen and accelerator grids in ion beam sputtering deposition system

Energy Technology Data Exchange (ETDEWEB)

Yang, Jie; Zhao, Bo [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Wang, Chong, E-mail: cwang@mail.sitp.ac.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Qiu, Feng; Wang, Rongfei [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China); Yang, Yu, E-mail: yuyang@ynu.edu.cn [Institute of Optoelectronic Information Materials, School of Materials Science and Engineering, Yunnan University, Kunming 650091 (China); Yunnan Key Laboratory for Micro/Nano Materials and Technology, Yunnan University, Kunming 650091 (China)

2016-11-15

Highlights: • Ge islands were prepared by ion beam sputtering with different grid-to-grid gaps. • Ge islands with larger sizes and low density are observed in 1-mm-spaced samples. • The island growth was determined by sputter energy and the quality of Si buffer. • The crystalline volume fraction of buffer must be higher than 72% to grow islands. - Abstract: Ge islands were fabricated on Si buffer layer by ion beam sputtering deposition with a spacing between the screen and accelerator grids of either 1 mm or 2 mm. The Si buffer layer exhibits mixed-phase microcrystallinity for samples grown with 1 mm spacing and crystallinity for those with 2 mm spacing. Ge islands are larger and less dense than those grown on the crystalline buffer because of the selective growth mechanism on the microcrystalline buffer. Moreover, the nucleation site of Ge islands formed on the crystalline Si buffer is random. Ge islands grown at different grid-to-grid gaps are characterized by two key factors, namely, divergence half angle of ion beam and crystallinity of buffer layer. High grid-to-grid spacing results in small divergence half angle, thereby enhancing the sputtering energy and redistribution of sputtered atoms. The crystalline volume fraction of the microcrystalline Si buffer was obtained based on the integrated intensity ratio of Raman peaks. The islands show decreased density with decreasing crystalline volume fraction and are difficult to observe at crystalline volume fractions lower than 72%.

Transmission sputtering of gold thin-films by low-energy (< 1 keV) xenon ions: I. The system and the measurement

International Nuclear Information System (INIS)

Ayrault, G.; Seidman, D.N.

1978-01-01

A novel system for direct measurement of the transmission sputtering yields of ion-irradiated thin films is described. The system was specifically designed for the study of the transmission sputtering caused by low energy ( 0 A thick) which was mounted in a JEM 200 transmission electron-microscope holder. The temperature of the specimen could be varied between approx. 25 and 300 K employing a continuous-transfer liquid-helium cryostat. The particles (atoms or ions) ejected from the unirradiated surface of the gold thin-film were detected by two channetron electron-multiplier arrays in the Chevron configuration; the Chevron detector was able to detect individual transmission sputtered particles when operated in the saturated mode. To further enhance resolution the electron cascades, produced by the CEMA, were amplified and shaped electronically into uniform square pulses. The shaped signals were detected with an Ithaco 391A lock-in amplifier (LIA). With the aid of a ratiometer feature in the LIA we were able to measure directly the ratio of the transmission sputtered-current (I/sub t/) to the incident ion-current (I/sub b/); for I/sub b/ = μA cm -2 a ratio of I/sub t//I/sub b/ as small as 1 x 10 -9 was measured. A detailed discussion of the calibration procedure and the experimental errors, involved in this technique, are also presented. 45 references

Low temperature mechanical dissipation of an ion-beam sputtered silica film

International Nuclear Information System (INIS)

Martin, I W; Craig, K; Bassiri, R; Hough, J; Robie, R; Rowan, S; Nawrodt, R; Schwarz, C; Harry, G; Penn, S; Reid, S

2014-01-01

Thermal noise arising from mechanical dissipation in oxide mirror coatings is an important limit to the sensitivity of future gravitational wave detectors, optical atomic clocks and other precision measurement systems. Here, we present measurements of the temperature dependence of the mechanical dissipation of an ion-beam sputtered silica film between 10 and 300 K. A dissipation peak was observed at 20 K and the low temperature dissipation was found to have significantly different characteristics than observed for bulk silica and silica films deposited by alternative techniques. These results are important for better understanding the underlying mechanisms of mechanical dissipation, and thus thermal noise, in the most commonly-used reflective coatings for precision measurements. (paper)

Quantitative measurements of electromechanical response with a combined optical beam and interferometric atomic force microscope

Energy Technology Data Exchange (ETDEWEB)

Labuda, Aleksander; Proksch, Roger [Asylum Research an Oxford Instruments Company, Santa Barbara, California 93117 (United States)

2015-06-22

An ongoing challenge in atomic force microscope (AFM) experiments is the quantitative measurement of cantilever motion. The vast majority of AFMs use the optical beam deflection (OBD) method to infer the deflection of the cantilever. The OBD method is easy to implement, has impressive noise performance, and tends to be mechanically robust. However, it represents an indirect measurement of the cantilever displacement, since it is fundamentally an angular rather than a displacement measurement. Here, we demonstrate a metrological AFM that combines an OBD sensor with a laser Doppler vibrometer (LDV) to enable accurate measurements of the cantilever velocity and displacement. The OBD/LDV AFM allows a host of quantitative measurements to be performed, including in-situ measurements of cantilever oscillation modes in piezoresponse force microscopy. As an example application, we demonstrate how this instrument can be used for accurate quantification of piezoelectric sensitivity—a longstanding goal in the electromechanical community.

Growth of polycrystalline Pr_2NiO_4_+_δ coating on alumina substrate by RF magnetron co-sputtering from composite targets

International Nuclear Information System (INIS)

Sediri, A.; Zaghrioui, M.; Barichard, A.; Autret, C.; Negulescu, B.; Del Campo, L.; Echegut, P.; Laffez, P.

2016-01-01

Polycrystalline Pr_2NiO_4_+_δ coatings have been deposited on alumina substrates at room temperature by RF magnetron co-sputtering from Pr and Ni metallic composite target. The mixed target's area and the sputtering conditions were optimized to reach an atomic ratio Pr/Ni of 2. A subsequent annealing, at 1050–1100 °C, allowed obtaining Pr_2NiO_4_+_δ phase after in situ high temperature x-ray diffraction study performed on as-deposited film. Microstructural analyses (SEM and AFM) revealed dense and rough microstructure. Normal spectral emittance measurements performed at 794 °C in the spectral range 400–5000 cm"-"1 showed an emissivity of ε ≈ 0.8. - Highlights: • Pr_2NiO_4_+_δ coatings deposited by RF magnetron co-sputtering • Crystallization kinetic studied by X-ray diffraction versus temperature • SEM and AFM observations showed dense and rough microstructure • Normal spectral emittance reaches to ε = 0.8 at 794 °C in the opaque zone.

On niobium sputter coated cavities

International Nuclear Information System (INIS)

Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

1988-01-01

To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

Modeling Solar-Wind Heavy-Ions' Potential Sputtering of Lunar KREEP Surface

Science.gov (United States)

Barghouty, A. F.; Meyer, F. W.; Harris, R. P.; Adams, J. H., Jr.

2012-01-01

Recent laboratory data suggest that potential sputtering may be an important weathering mechanism that can affect the composition of both the lunar surface and its tenuous exosphere; its role and implications, however, remain unclear. Using a relatively simple kinetic model, we will demonstrate that solar-wind heavy ions induced sputtering of KREEP surfaces is critical in establishing the timescale of the overall solar-wind sputtering process of the lunar surface. We will also also show that potential sputtering leads to a more pronounced and significant differentiation between depleted and enriched surface elements. We briefly discuss the impacts of enhanced sputtering on the composition of the regolith and the exosphere, as well as of solar-wind sputtering as a source of hydrogen and water on the moon.

Time-resolved and doppler-reduced laser spectroscopy on atoms

International Nuclear Information System (INIS)

Bergstroem, H.

1991-10-01

Radiative lifetimes have been studied in neutral boron, carbon, silicon and strontium, in singly ionized gadolinium and tantalum and in molecular carbon monoxide and C 2 . The time-resolved techniques were based either on pulsed lasers or pulse-modulated CW lasers. Several techniques have been utilized for the production of free atoms and ions such as evaporation into an atomic beam, sputtering in hollow cathodes and laser-produced plasmas. Hyperfine interactions in boron, copper and strontium have been examined using quantum beat spectroscopy, saturation spectroscopy and collimated atomic beam spectroscopy. Measurement techniques based on effusive hollow cathodes as well as laser produced plasmas in atomic physics have been developed. Investigations on laser produced plasmas using two colour beam deflection tomography for determination of electron densities have been performed. Finally, new possibilities for view-time-expansion in light-in-flight holography using mode-locked CW lasers have been demonstrated. (au)

Quantitative studies of electric field intensity on atom diffusion of Cu/Ta/Si stacks during annealing

Energy Technology Data Exchange (ETDEWEB)

Wang, Lei, E-mail: ray521252@gmail.com [Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Stomatology Department, Nanjing General Hospital, Nanjing University, Medical School, Nanjing, 210002 (China); Asempah, Isaac; Dong, Song-Tao; Yin, Pian-Pian [Institute of Material Science and Engineering, Jiangsu University of Science and Technology, Zhenjiang 212003 (China); Jin, Lei, E-mail: ljin@nju.edu.cn [Stomatology Department, Nanjing General Hospital, Nanjing University, Medical School, Nanjing, 210002 (China)

2017-03-31

Highlights: • The electric field intensity accelerates the atom diffusion of Cu/Ta/Si stacks at 650 °C. • The acceleration effect is enhanced with an increment of electric field intensity. • An acceleration factor (1 + a·a{sup E/0.8}){sup 2} accelerating diffusion coefficient is determined by quantitative analysis. - Abstract: It has been shown that enhanced electric field intensity (0–4.0 kV/cm) has an obvious effect on accelerating atom diffusion in Cu/Ta/Si interconnect stacks at 650 °C. The theoretical deduction proves that diffusion coefficient is accelerated proportional to an acceleration factor (1 + a·α{sup E/0.8}){sup 2}. The analysis indicates that the accelerating effect is mainly attributed to the perturbation of the electric state of the defects and enhanced vacancy and dislocation densities.

A Quantitative Tool for Producing DNA-Based Diagnostic Arrays

Energy Technology Data Exchange (ETDEWEB)

Tom J. Whitaker

2008-07-11

The purpose of this project was to develop a precise, quantitative method to analyze oligodeoxynucleotides (ODNs) on an array to enable a systematic approach to quality control issues affecting DNA microarrays. Two types of ODN's were tested; ODN's formed by photolithography and ODN's printed onto microarrays. Initial work in Phase I, performed in conjunction with Affymetrix, Inc. who has a patent on a photolithographic in situ technique for creating DNA arrays, was very promising but did seem to indicate that the atomization process was not complete. Soon after Phase II work was under way, Affymetrix had further developed fluorescent methods and indicated they were no longer interested in our resonance ionization technique. This was communicated to the program manager and it was decided that the project would continue and be focused on printed ODNs. The method being tested is called SIRIS, Sputter-Initiated Resonance Ionization Spectroscopy. SIRIS has been shown to be a highly sensitive, selective, and quantitative tool for atomic species. This project was aimed at determining if an ODN could be labeled in such a way that SIRIS could be used to measure the label and thus provide quantitative measurements of the ODN on an array. One of the largest problems in this study has been developing a method that allows us to know the amount of an ODN on a surface independent of the SIRIS measurement. Even though we could accurately determine the amount of ODN deposited on a surface, the amount that actually attached to the surface is very difficult to measure (hence the need for a quantitative tool). A double-labeling procedure was developed in which 33P and Pt were both used to label ODNs. The radioactive 33P could be measured by a proportional counter that maps the counts in one dimension. This gave a good measurement of the amount of ODN remaining on a surface after immobilization and washing. A second label, Pt, was attached to guanine nucleotides in the

Quantitative evaluation of the fault tolerance of systems important to the safety of atomic power plants

International Nuclear Information System (INIS)

Malkin, S.D.; Sivokon, V.P.; Shmatkova, L.V.

1989-01-01

Fault tolerance is the property of a system to preserve its performance upon failures of its components. Thus, in nuclear-reactor technology one has only a qualitative evaluation of fault tolerance - the single-failure criterion, which does not enable one to compare and perform goal-directed design of fault-tolerant systems, and in the field of computer technology there are no generally accepted evaluations of fault tolerance that could be applied effectively to reactor systems. This paper considers alternative evaluations of fault tolerance and a method of comprehensive automated calculation of the reliability and fault tolerance of complex systems. The authors presented quantitative estimates of fault tolerance that develop the single-failure criterion. They have limiting processes that allow simple and graphical standardization. They worked out a method and a program for comprehensive calculation of the reliability and fault tolerance of systems of complex structure that are important to the safety of atomic power plants. The quantitative evaluation of the fault tolerance of these systems exhibits a degree of insensitivity to failures and shows to what extent their reliability is determined by a rigorously defined structure, and to what extent by the probabilistic reliability characteristics of the components. To increase safety, one must increase the fault tolerance of the most important systems of atomic power plants

Comparative study of nanocomposites prepared by pulsed and dc sputtering combined with plasma polymerization suitable for photovoltaic device applications

International Nuclear Information System (INIS)

Hussain, Amreen A.; Pal, Arup R.; Kar, Rajib; Bailung, Heremba; Chutia, Joyanti; Patil, Dinkar S.

2014-01-01

Plasma processing, a single step method for production of large area composite films, is employed to deposit plasma polymerized aniline-Titanium dioxide (PPani-TiO 2 ) nanocomposite thin films. The deposition of PPani-TiO 2 nanocomposite films are made using reactive magnetron sputtering and plasma polymerization combined process. This study focuses on the direct comparison between continuous and pulsed dc magnetron sputtering techniques of titanium in combination with rf plasma polymerization of aniline. The deposited PPani-TiO 2 nanocomposite films are characterized and discussed in terms of structural, morphological and optical properties. A self powered hybrid photodetector has been developed by plasma based process. The proposed method provides a new route where the self-assembly of molecules, that is, the spontaneous association of atomic or molecular building blocks under plasma environment, emerge as a successful strategy to form well-defined structural and morphological units of nanometer dimensions. - Highlights: • PPani-TiO 2 nanocomposite by pulsed and dc sputtering with rf plasma polymerization. • In-situ and Ex-situ H 2 SO 4 doping in PPani-TiO 2 nanocomposite. • PPani-TiO 2 nanocomposite based self-powered-hybrid photodetector

Research of the surface properties of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene modified with radio-frequency magnetron sputtering for medical application

International Nuclear Information System (INIS)

Tverdokhlebov, S.I.; Bolbasov, E.N.; Shesterikov, E.V.; Malchikhina, A.I.; Novikov, V.A.; Anissimov, Y.G.

2012-01-01

Highlights: ► A method for surface modification of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene using radio-frequency magnetron sputtering of hydroxyapatite target is proposed. ► It is demonstrated that the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene surface becomes hydrophilic as the result of the modification. ► It is shown, using atomic force microscopy that the surface potential biases into positive value field and the surface roughness parameters increase as the result of the modification. ► In vitro testing has not found bio-toxicity of investigated surfaces - Abstract: The properties of thin calcium-phosphate coatings formed by radio-frequency magnetron sputtering of a solid target made from hydroxyapatite on the surface of the thermoplastic copolymer of vinilidene fluoride and tetrafluoroethylene (VDF–TeFE) were investigated. Atomic force microscopy energy dispersive analysis and optical goniometry showed that deposited calcium-phosphate coatings change significantly the morphological, electrical, chemical, and contact properties of the surface of the initial polymeric substrates. These modified surfaces widen the scope of medical application of the thermoplastic copolymer.

Deposition and characterization of sputtered hexaboride coatings; Abscheidung und Charakterisierung aufgestaeubter Hexaboridschichten

Energy Technology Data Exchange (ETDEWEB)

Waldhauser, W

1996-06-01

Hexaborides of the rare-earth elements ReB{sub 6} are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB{sub 6} or single LaB{sub 6} crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB{sub 6}, CeB{sub 6}, SmB{sub 6} and YB{sub 6} targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB{sub 6}, CeB{sub 6} and SmB{sub 6} to YB{sub 6}. The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB{sub 6} coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

Modelling of low energy ion sputtering from oxide surfaces

International Nuclear Information System (INIS)

Kubart, T; Nyberg, T; Berg, S

2010-01-01

The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

On a relationship between the geometry of cones on sputtered surfaces and the angular dependence of sputtered yields

International Nuclear Information System (INIS)

Chadderton, L.T.

1977-01-01

It is widely believed that the phenomenon responsible for the familiar peak in the angular dependence of sputtered yields also gives rise to characteristic semiangles α of conical protruberances on sputtered surfaces. It is shown that α corresponds to the process giving rise to the minimum rather than the maximum. No accurate measurements of the minimum have yet been made. (Auth.)

RF sputtering: A viable tool for MEMS fabrication

Indian Academy of Sciences (India)

being prepared by RF sputtering and their application in MEMS being explored. ... crystallographic properties were evaluated using XRD analysis (CuKα radiation ..... Bhatt V, Pal P, Chandra S 2005 Feasibility study of RF sputtered ZnO film for ...

Microstructural control of TiC/a-C nanocomposite coatings with pulsed magnetron sputtering

International Nuclear Information System (INIS)

Pei, Y.T.; Chen, C.Q.; Shaha, K.P.; De Hosson, J.Th.M.; Bradley, J.W.; Voronin, S.A.; Cada, M.

2008-01-01

In this paper, we report some striking results on the microstructural control of TiC/a-C nanocomposite coatings with pulsed direct current (DC) magnetron sputtering. The interface morphology and microstructure evolution as a function of pulse frequency and duty cycle were scrutinized using atomic force microscopy, scanning electron microscopy and high-resolution transmission electron microscopy techniques. It is shown that, with increasing pulse frequency, the nanocomposite coatings exhibit evolutions in morphology of the growing interface from rough to smooth and in the microstructure from strongly columnar to fully columnar-free. In addition, the smoothly growing interface favors the formation of a tailor-made multilayered nanocomposite structure. The fundamental mechanisms are analyzed with the assistance of plasma diagnostic experiments. Ion mass/energy spectrometry measurements reveal that, depending on the frequency and duty cycle of DC pulses, pulsing of the magnetrons can control the flux and energy distribution of Ar + ions over a very broad range for concurrent impingement on the growing interface of deposited coatings, in comparison with DC sputtering. The significantly enhanced energy flux density is thought to be responsible for the 'adatom transfer' in interface smoothening and thus the restraint of columnar growth

Nanoporous sputtered platinum-iridium-thinfilms for medical and energy applications; Nanoporoese gesputterte Platin-Iridium-Schichten fuer Anwendungen in der Medizin- und Energietechnik

Energy Technology Data Exchange (ETDEWEB)

Ganske, Gerald

2012-10-05

Sputtering makes it possible to create thinfilms of only a few atom layers and to customize them for special applications by adjusting the deposition parameters. In this work interface-layers are deposited and characterized in biological systems as stimulation electrodes for neural cells and as catalysts in hydrogen fuel cells. First of all, highly porous platinum films were created by sputtering at a pressure of 9 Pa and low power of less than 100 W. These parameters are an ideal compromise between deposition rate, porosity and disordered crystal structure of the layers. Investigations on co-sputtered platinum-iridium-films (PtIr) showed that these films form homogeneous structures and no distinction between the separate layers is possible. It was demonstrated that these films obtain the crystal structure of Pt as well as the finer cauliflower-like structure of iridium, if the atoms reach the substrate surface only with their thermal energy. Furthermore, it was shown that the film composition reflects the sputtering power of the separate targets in a linear way. The structure of the films can be predicted by means of monte-carlo-simulation, which was verified by SEM-pictures. The ratio of the sputtering power can be used to control the amount of interface elements which was confirmed by electrochemical tests. Electrode materials for the stimulation of neural cells need a large electrochemically active surface that allows for an interface between electron and ion conductivity. Test on platinum, iridium and PtIr have shown that the films sputtered at the lowest impact energy do have the largest active surface as well as the largest charge delivery capacity (CDC). Iridium films show the highest CDC (48 mC/cm{sup 2}), followed by platinum-iridium (2 mC/cm{sup 2}, 100 W power at both targets) and pure platinum (16 mC/cm{sup 2}). This can be explained by the large surface area of iridium and its electrochemical activation process. Although PtIr layers also show an

Influence of ion/atom arrival ratio on structure and optical properties of AlN films by ion beam assisted deposition

Energy Technology Data Exchange (ETDEWEB)

Meng, Jian-ping [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Fu, Zhi-qiang, E-mail: fuzq@cugb.edu.cn [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China); Liu, Xiao-peng [Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088 (China); Yue, Wen; Wang, Cheng-biao [School of Engineering and Technology, China University of Geosciences, Beijing 100083 (China)

2014-10-30

Highlights: • AlN films were fabricated by dual ion beam sputtering. • Chemical bond status and phase composition of the films were studied by XPS and XRD. • Optical constants were measured by spectroscopic ellipsometry. • Influence of ion/atom arrival ratio on the films was studied. - Abstract: In order to improve the optical properties of AlN films, the influence of the ion/atom arrival ratio on the structure and optical characteristics of AlN films deposited by dual ion beam sputtering was studied by using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry and UV–vis spectroscopy. The films prepared at the ion/atom arrival ratio of 1.4 are amorphous while the crystalline quality is improved with the increase of the ion/atom arrival ratio. The films deposited at the ion/atom arrival ratio of no less than 1.8 have an approximately stoichiometric ratio and mainly consist of aluminum nitride with little aluminum oxynitride, while metallic aluminum component appears in the films deposited at the ion/atom arrival ratio of 1.4. When the ion/atom arrival ratio is not less than 1.8, films are smooth, high transmitting and dense. The films prepared with high ion/atom arrival ratio (≥1.8) display the characteristic of a dielectric. The films deposited at the ion/atom arrival ratio of 1.4 are coarse, opaque and show characteristic of cermet.

High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

Science.gov (United States)

Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

1990-01-01

Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

Influence of post-hydrogenation upon electrical, optical and structural properties of hydrogen-less sputter-deposited amorphous silicon

Energy Technology Data Exchange (ETDEWEB)

Gerke, S., E-mail: sebastian.gerke@uni-konstanz.de [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Becker, H.-W.; Rogalla, D. [RUBION — Central Unit for Ion Beams and Radioisotopes, University of Bochum, Bochum, 44780 (Germany); Singer, F.; Brinkmann, N.; Fritz, S.; Hammud, A.; Keller, P.; Skorka, D.; Sommer, D. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Weiß, C. [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Flege, S. [Department of Materials Science, TU Darmstadt, Darmstadt 64287 (Germany); Hahn, G. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany); Job, R. [Department of Electrical Engineering and Computer Science, Münster University of Applied Sciences, Steinfurt 48565 (Germany); Terheiden, B. [Department of Physics, University of Konstanz, Konstanz, 78457 (Germany)

2016-01-01

Amorphous silicon (a-Si) is common in the production of technical devices and can be deposited by several techniques. In this study intrinsic and doped, hydrogen-less amorphous silicon films are RF magnetron sputter deposited and post-hydrogenated in a remote hydrogen plasma reactor at a temperature of 370 °C. Secondary ion mass spectrometry of a boron doped (p) a-Si layer shows that the concentration of dopants in the sputtered layer becomes the same as present in the sputter-target. Improved surface passivation of phosphorous doped 5 Ω cm, FZ, (n) c-Si can be achieved by post-hydrogenation yielding a minority carrier lifetime of ~ 360 μs finding an optimum for ~ 40 nm thin films, deposited at 325 °C. This relatively low minority carrier lifetime indicates high disorder of the hydrogen-less sputter deposited amorphous network. Post-hydrogenation leads to a decrease of the number of localized states within the band gap. Optical band gaps (Taucs gab as well as E{sub 04}) can be determined to ~ 1.88 eV after post-hydrogenation. High resolution transmission electron microscopy and optical Raman investigations show that the sputtered layers are amorphous and stay like this during post-hydrogenation. As a consequence of the missing hydrogen during deposition, sputtered a-Si forms a rough surface compared to CVD a-Si. Atomic force microscopy points out that the roughness decreases by up to 25% during post-hydrogenation. Nuclear resonant reaction analysis permits the investigation of hydrogen depth profiles and allows determining the diffusion coefficients of several post-hydrogenated samples from of a model developed within this work. A dependency of diffusion coefficients on the duration of post-hydrogenation indicates trapping diffusion as the main diffusion mechanism. Additional Fourier transform infrared spectroscopy measurements show that hardly any interstitial hydrogen exists in the post-hydrogenated a-Si layers. The results of this study open the way for

International bulletin on atomic and molecular data for fusion. No. 42-45

International Nuclear Information System (INIS)

Botero, J.

1991-01-01

The bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In Part I the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths; transition probabilities, oscillator strengths; polarizabilities, electric moments; interatomic potentials); (ii) atomic and molecular collisions (photon collisions; electro collisions; heavy-particle collisions; homonuclear sequences), and (iii) surface interactions (sputtering; trapping, detrapping; adsorption, desorption; surface damage; blistering, flaking; chemical reactions). Part II contains the bibliographic data for the above listed topics and for plasma composition and impurities; plasma heating, cooling and fuelling; fusion research of general interest; high energy laser- and beam-matter interaction; interaction of atomic particles with fields. A list of evaluated data bases on atomic and molecular collisions and on particle-surface interactions is also given

Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2009-11-22

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

Deposition rates of high power impulse magnetron sputtering: Physics and economics

International Nuclear Information System (INIS)

Anders, Andre

2010-01-01

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

Science.gov (United States)

Barghouty, Abdulmasser F.; Adams, James H., Jr.

2008-01-01

At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

Nanopatterning of swinging substrates by ion-beam sputtering

Energy Technology Data Exchange (ETDEWEB)

Yoon, Sun Mi; Kim, J.-S., E-mail: jskim@sm.ac.kr [Department of Physics, Sookmyung Women' s University, Seoul 140-742 (Korea, Republic of)

2016-05-28

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Nanopatterning of swinging substrates by ion-beam sputtering

International Nuclear Information System (INIS)

Yoon, Sun Mi; Kim, J.-S.

2016-01-01

Graphite substrates are azimuthally swung during ion-beam sputtering (IBS) at a polar angle θ = 78° from the surface normal. The swinging of the substrate not only causes quasi-two-dimensional mass transport but also makes various sputter effects from the different incident angles to work together. Through variation of the swing angle, both the transport and sputtering effects synergistically produce a series of salient patterns, such as asymmetric wall-like structures, which can grow to several tens of nanometers and exhibit a re-entrant orientational change with the increased swing angle. Thus, the present work demonstrates that dynamic variables such as the swing angle, which have been little utilized, offer an additional parameter space that can be exploited to diversify the sputtered patterns, thereby expanding the applicability of an IBS as well as the comprehension of the IBS nano patterning mechanism.

Quantitative assessment of intermolecular interactions by atomic force microscopy imaging using copper oxide tips

Science.gov (United States)

Mönig, Harry; Amirjalayer, Saeed; Timmer, Alexander; Hu, Zhixin; Liu, Lacheng; Díaz Arado, Oscar; Cnudde, Marvin; Strassert, Cristian Alejandro; Ji, Wei; Rohlfing, Michael; Fuchs, Harald

2018-05-01

Atomic force microscopy is an impressive tool with which to directly resolve the bonding structure of organic compounds1-5. The methodology usually involves chemical passivation of the probe-tip termination by attaching single molecules or atoms such as CO or Xe (refs 1,6-9). However, these probe particles are only weakly connected to the metallic apex, which results in considerable dynamic deflection. This probe particle deflection leads to pronounced image distortions, systematic overestimation of bond lengths, and in some cases even spurious bond-like contrast features, thus inhibiting reliable data interpretation8-12. Recently, an alternative approach to tip passivation has been used in which slightly indenting a tip into oxidized copper substrates and subsequent contrast analysis allows for the verification of an oxygen-terminated Cu tip13-15. Here we show that, due to the covalently bound configuration of the terminal oxygen atom, this copper oxide tip (CuOx tip) has a high structural stability, allowing not only a quantitative determination of individual bond lengths and access to bond order effects, but also reliable intermolecular bond characterization. In particular, by removing the previous limitations of flexible probe particles, we are able to provide conclusive experimental evidence for an unusual intermolecular N-Au-N three-centre bond. Furthermore, we demonstrate that CuOx tips allow the characterization of the strength and configuration of individual hydrogen bonds within a molecular assembly.

Resputtering effect during MgO buffer layer deposition by magnetron sputtering for superconducting coated conductors

Energy Technology Data Exchange (ETDEWEB)

Xiao, Shaozhu; Shi, Kai; Deng, Shutong; Han, Zhenghe [Applied Superconductivity Research Center, Department of Physics, Tsinghua University, Beijing 100084 (China); Feng, Feng, E-mail: feng.feng@sz.tsinghua.edu.cn; Lu, Hongyuan [Division of Advanced Manufacturing, Graduate School at Shenzhen, Tsinghua University, Shenzhen 518055 (China); Qu, Timing; Zhu, Yuping [Department of Mechanical Engineering, Tsinghua University, Beijing 100084 (China); Huang, Rongxia [School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006 (China)

2015-07-15

In this study, MgO thin films were deposited by radio-frequency magnetron sputtering. The film thickness in the deposition area directly facing the target center obviously decreased compared with that in other areas. This reduction in thickness could be attributed to the resputtering effect resulting from bombardment by energetic particles mainly comprising oxygen atoms and negative oxygen ions. The influences of deposition position and sputtering pressure on the deposition rate were investigated. Resputtering altered the orientation of the MgO film from (111) to (001) when the film was deposited on a single crystal yttria-stabilized zirconia substrate. The density distribution of energetic particles was calculated on the basis of the measured thicknesses of the MgO films deposited at different positions. The divergence angle of the energetic particle flux was estimated to be approximately 15°. The energetic particle flux might be similar to the assisting ion flux in the ion beam assisted deposition process and could affect the orientation of the MgO film growth.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.; Dinari, P.; Darma, Y. [Quantum Semiconductor and Devices Lab., Physics of Material Electronics Research Division, Department of Physics, Institut Teknologi Bandung (Indonesia)

2015-04-16

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate without treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.

Study of the chemical sputtering in Tore-Supra; Etude de l'erosion chimique dans le tokamak Tore-Supra

Energy Technology Data Exchange (ETDEWEB)

Cambe, A

2002-06-28

The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C{sub 2}D{sub x} and C{sub 3}D{sub y}) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD{sub 4} (Y{sub CD4}) is highly flux ({phi}) dependent, showing a variation of the form: Y{sub CD4} {proportional_to} {phi}{sup -0.23}. The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y{sub CD4}. The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, {mu}m wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 {mu}m of tungsten. (author)

Comparison study of ITO thin films deposited by sputtering at room temperature onto polymer and glass substrates

International Nuclear Information System (INIS)

Guillen, C.; Herrero, J.

2005-01-01

Indium tin oxide (ITO) thin films have been grown simultaneously onto glass and polymer substrates at room temperature by sputtering from ceramic target. The structure, morphology and electro-optical characteristics of the ITO/glass and ITO/polymer samples have been analyzed by X-ray diffraction, atomic force microscopy, four-point electrical measurements and spectrophotometry. In the selected experimental conditions, the polycrystalline ITO coating shows higher average grain size and higher conductivity, with similar visible transmittance, onto the polymer than onto the glass substrate

Atomic mixing effects on high fluence Ge implantation into Si at 40 keV

International Nuclear Information System (INIS)

Gras-Marti, A.; Jimenez-Rodriguez, J.J.; Peon-Fernandez, J.; Rodriguez-Vidal, M.; Tognetti, N.P.; Carter, G.; Nobes, M.J.; Armour, D.G.

1982-01-01

Ion implanted profiles of 40 keV Ge + into Si at fluences ranging from approx. equal to 10 15 ions/cm 2 up to saturation have been measured using the RBS technique. The profiles compare well with the predictions of an analytical model encompasing sputter erosion plus atomic relocation. (orig.)

ERO modeling of Cr sputtering in the linear plasma device PSI-2

Science.gov (United States)

Eksaeva, A.; Borodin, D.; Kreter, A.; Nishijima, D.; Pospieszczyk, A.; Schlummer, T.; Ertmer, S.; Terra, A.; Unterberg, B.; Kirschner, A.; Romazanov, J.; Brezinsek, S.; Rasinski, M.; Henderson, S.; O'Mullane, M.; Summers, H.; Bluteau, M.; Marenkov, E.

2017-12-01

The prediction of the first wall deterioration and possible plasma contamination by impurities is a high priority task for ITER. 3D Monte-Carlo code ERO is a tool for modeling of eroded impurity transport and spectroscopy in plasma devices useful for experiment interpretation. Chromium (Cr) is a fusion-relevant reactor wall element (e.g. component of RAFM steels expected for use in DEMO). Linear plasma devices including PSI-2 are effective tools for investigations of plasma-surface interaction effects, allowing continuous plasma operation and good control over irradiation parameters. Experiments on Cr sputtering were conducted at PSI-2. In these experiments the Cr erosion was measured by three techniques: mass loss of the sample, quartz micro-balance of deposited impurities at a distance from it and optical emission spectroscopy. Experiments were modeled with the 3D Monte-Carlo code ERO, previously validated by application to similar experiments with tungsten (W). The simulations are demonstrated to reproduce the main experimental outcomes proving the quality of the sputtering data used. A significant focuses of the paper is the usage and validation of atomic data (resent metastable-resolved dataset from ADAS) for interpretation of Cr spectroscopy. Initial population of quasi-metastable state was fitted by matching the modeling with the experimental line intensity profiles.

Sputtering as a means of depth profiling

International Nuclear Information System (INIS)

Whitton, J.L.

1978-01-01

Probably the most common technique for determination of depth profiles by sputtering is that of secondary ion mass spectrometry. Many problems occur in the important step of converting the time (of sputtering) scale to a depth scale and these problems arise before the secondary ions are ejected. An attempt is made to present a comprehensive list of the effects that should be taken into consideration in the use of sputtering as a means of depth profiling. The various parameters liable to affect the depth profile measurements are listed in four sections: beam conditions; target conditions; experimental environment; and beam-target interactions. The effects are discussed and where interplay occurs, cross-reference is made and examples are provided where possible. (B.R.H.)

International bulletin on atomic and molecular data for fusion. No. 46

International Nuclear Information System (INIS)

Botero, J.

1993-06-01

The bulletin is published by the International Atomic Energy Agency to provide atomic and molecular data relevant to fusion research and technology. In Part I the indexed papers are listed separately for (i) structure and spectra (energy levels, wavelengths; transition probabilities, oscillator strengths; interatomic potentials); (ii) atomic and molecular collisions (photon collisions; electron collisions; heavy-particle collisions; homonuclear sequences; isoelectronic sequences), and (iii) surface interactions (sputtering; chemical reactions; trapping and detrapping; surface damage; blistering, flaking; secondary electron emission). Part II contains the bibliographic data for the above listed topics and for high energy laser- and beam-matter interaction; interaction of atomic particles with fields. The atomic and molecular data needs in fusion research, as identified during the IAEA Consultants' Meeting on 'Atomic and Molecular Database for Hydrogen Recycling and Helium Exhaust from Fusion Reactors', June 1992, Vienna, are listed, covering (i) atomic and molecular collision processes, (ii) particle-surface interaction processes, and (iii) the status of data bases on atomic and molecular data and plasma-surface interactions. News on the ALADDIN (A labelled Atomic Data INterface) system is provided. Finally, a list of evaluated atomic and molecular data bases is provided

Molecular dynamics simulation of gold cluster growth during sputter deposition

Energy Technology Data Exchange (ETDEWEB)

Abraham, J. W., E-mail: abraham@theo-physik.uni-kiel.de; Bonitz, M., E-mail: bonitz@theo-physik.uni-kiel.de [Institut für Theoretische Physik und Astrophysik, Christian-Albrechts-Universität zu Kiel, Leibnizstraße 15, D-24098 Kiel (Germany); Strunskus, T.; Faupel, F. [Institut für Materialwissenschaft, Lehrstuhl für Materialverbunde, Christian-Albrechts-Universität zu Kiel, Kaiserstraße 2, D-24143 Kiel (Germany)

2016-05-14

We present a molecular dynamics simulation scheme that we apply to study the time evolution of the self-organized growth process of metal cluster assemblies formed by sputter-deposited gold atoms on a planar surface. The simulation model incorporates the characteristics of the plasma-assisted deposition process and allows for an investigation over a wide range of deposition parameters. It is used to obtain data for the cluster properties which can directly be compared with recently published experimental data for gold on polystyrene [M. Schwartzkopf et al., ACS Appl. Mater. Interfaces 7, 13547 (2015)]. While good agreement is found between the two, the simulations additionally provide valuable time-dependent real-space data of the surface morphology, some of whose details are hidden in the reciprocal-space scattering images that were used for the experimental analysis.

Preparation of Ag-containing diamond-like carbon films on the interior surface of tubes by a combined method of plasma source ion implantation and DC sputtering

Science.gov (United States)

Hatada, R.; Flege, S.; Bobrich, A.; Ensinger, W.; Dietz, C.; Baba, K.; Sawase, T.; Watamoto, T.; Matsutani, T.

2014-08-01

Adhesive diamond-like carbon (DLC) films can be prepared by plasma source ion implantation (PSII), which is also suitable for the treatment of the inner surface of a tube. Incorporation of a metal into the DLC film provides a possibility to change the characteristics of the DLC film. One source for the metal is DC sputtering. In this study PSII and DC sputtering were combined to prepare DLC films containing low concentrations of Ag on the interior surfaces of stainless steel tubes. A DLC film was deposited using a C2H4 plasma with the help of an auxiliary electrode inside of the tube. This electrode was then used as a target for the DC sputtering. A mixture of the gases Ar and C2H4 was used to sputter the silver. By changing the gas flow ratios and process time, the resulting Ag content of the films could be varied. Sample characterizations were performed by X-ray photoelectron spectroscopy, secondary ion mass spectrometry, atomic force microscopy and Raman spectroscopy. Additionally, a ball-on-disk test was performed to investigate the tribological properties of the films. The antibacterial activity was determined using Staphylococcus aureus bacteria.

Novel atomic absorption spectrometric and rapid spectrophotometric methods for the quantitation of paracetamol in saliva: application to pharmacokinetic studies.

Science.gov (United States)

Issa, M M; Nejem, R M; El-Abadla, N S; Al-Kholy, M; Saleh, Akila A

2008-01-01

A novel atomic absorption spectrometric method and two highly sensitive spectrophotometric methods were developed for the determination of paracetamol. These techniques based on the oxidation of paracetamol by iron (III) (method I); oxidation of p-aminophenol after the hydrolysis of paracetamol (method II). Iron (II) then reacts with potassium ferricyanide to form Prussian blue color with a maximum absorbance at 700 nm. The atomic absorption method was accomplished by extracting the excess iron (III) in method II and aspirates the aqueous layer into air-acetylene flame to measure the absorbance of iron (II) at 302.1 nm. The reactions have been spectrometrically evaluated to attain optimum experimental conditions. Linear responses were exhibited over the ranges 1.0-10, 0.2-2.0 and 0.1-1.0 mug/ml for method I, method II and atomic absorption spectrometric method, respectively. A high sensitivity is recorded for the proposed methods I and II and atomic absorption spectrometric method value indicate: 0.05, 0.022 and 0.012 mug/ml, respectively. The limit of quantitation of paracetamol by method II and atomic absorption spectrometric method were 0.20 and 0.10 mug/ml. Method II and the atomic absorption spectrometric method were applied to demonstrate a pharmacokinetic study by means of salivary samples in normal volunteers who received 1.0 g paracetamol. Intra and inter-day precision did not exceed 6.9%.

Role of intericosahedral chains on the hardness of sputtered boron carbide films

International Nuclear Information System (INIS)

Jacobsohn, L.G.; Averitt, R.D.; Wetteland, C.J.; Schulze, R.K.; Nastasi, M.; Daemen, L.L.; Jenei, Z.; Asoka-Kumar, P.

2004-01-01

The relationship between the structure and mechanical properties of sputter-deposited boron carbide films was investigated. Changes in the structure induced by annealing were characterized in terms of chemical composition, chemical bonding, and concentrations of defects and trapped impurities. The creation of intericosahedral chains for higher annealing temperatures was revealed by infrared and Raman measurements, and the intensity of the infrared band at 1500 cm-1 was found to be related to the hardness. The presence of residual trapped Ar atoms and of open-volume defects is insensitive to relatively high annealing temperatures and does not influence the recovery of the hardness. Our results suggest postdeposition annealing as a pathway to enhance the mechanical properties of boron carbide films

Tribological properties of nc-TiC/a-C:H coatings prepared by magnetron sputtering at low and high ion bombardment of the growing film

Czech Academy of Sciences Publication Activity Database

Souček, P.; Schmidtová, T.; Bursíková, V.; Vašina, P.; Pei, Y.; De Hos, J. Th. M.; Caha, O.; Peřina, Vratislav; Mikšová, Romana; Malinský, Petr

2014-01-01

Roč. 241, FEB (2014), s. 64-73 ISSN 0257-8972 R&D Projects: GA MŠk(XE) LM2011019; GA ČR(CZ) GD104/09/H080 Institutional support: RVO:61389005 Keywords : nanocomposites * magnetron sputtering * Titanium carbide * ion flux * friction * wear Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.998, year: 2014

Effect of chemical treatment on surface characteristics of sputter deposited Ti-rich NiTi shape memory alloy thin-films

International Nuclear Information System (INIS)

Sharma, S.K.; Mohan, S.

2014-01-01

Graphical abstract: FTIR spectra recorded for sputter deposited (a) untreated and (b) chemically treated NiTi SMA thin-films. - Highlights: • The effect of chemical treatment on surface properties of NiTi films demonstrated. • Chemically treated films offer strong ability to form protective TiO 2 layer. • TiO 2 layer formation offer great application prospects in biomedical fields. - Abstract: NiTi thin-films were deposited by DC magnetron sputtering from single alloy target (Ni/Ti:45/55 at.%). The rate of deposition and thickness of sputter deposited films were maintained to ∼35 nm min −1 and 4 μm respectively. A set of sputter deposited NiTi films were selected for specific chemical treatment with the solution comprising of de-ionized water, HF and HNO 3 respectively. The influence of chemical treatment on surface characteristics of NiTi films before and after chemical treatment was investigated for their structure, micro-structure and composition using different analytical techniques. Prior to chemical treatment, the composition of NiTi films using energy dispersive X-ray dispersive spectroscopy (EDS), were found to be 51.8 atomic percent of Ti and 48.2 atomic percent of Ni. The structure and morphology of these films were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD investigations, demonstrated the presence of dominant Austenite (1 1 0) phase along with Martensite phase, for untreated NiTi films whereas some additional diffraction peaks viz. (1 0 0), (1 0 1), and (2 0 0) corresponding to Rutile and Anatase phase of Titanium dioxide (TiO 2 ) along with parent Austenite (1 1 0) phase were observed for chemically treated NiTi films. FTIR studies, it can be concluded that chemically treated films have higher tendency to form metal oxide/hydroxide than the untreated NiTi films. XPS investigations, demonstrated the presence of Ni-free surface and formation of a protective metal oxide (TiO 2 ) layer on the surface of

Sputtering of Au induced by single Xe ion impacts

International Nuclear Information System (INIS)

Birtcher, R. C.; Donnelly, S. E.

1999-01-01

Sputtering of Au thin films has been determined for Xe ions with energies between 50 and 600 keV. In-situ transmission electron microscopy was used to observe sputtered Au during deposition on a carbon foil near the specimen. Total reflection and transmission sputtering yields for a 62 nm thick Au thin film were determined by ex-situ measurement of the total amount of Au on the carbon foils. In situ observations show that individual Xe ions eject Au nanoparticles as large as 7 nm in diameter with an average diameter of approximately 3 nm. Particle emission correlates with crater formation due to single ion impacts. Nanoparticle emission contributes significantly to the total sputtering yield for Xe ions in this energy range in either reflection or transmission geometry

Arc generation from sputtering plasma-dielectric inclusion interactions

International Nuclear Information System (INIS)

Wickersham, C.E. Jr.; Poole, J.E.; Fan, J.S.

2002-01-01

Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al 2 O 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λ d , is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λ d and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering

International Nuclear Information System (INIS)

Chuang, M.J.; Huang, H.F.; Wen, C.H.; Chu, A.K.

2010-01-01

Structures and surface chemical composition of indium tin oxide (ITO) thin films prepared by long-throw radio-frequency magnetron sputtering technique have been investigated. The ITO films were deposited on glass substrates using a 20 cm target-to-substrate distance in a pure argon sputtering environment. X-ray diffraction results showed that an increase in substrate temperature resulted in ITO structure evolution from amorphous to polycrystalline. Field-emission scanning electron microscopy micrographs suggested that the ITO films were free of bombardment of energetic particles since the microstructures of the films exhibited a smaller grain size and no sub-grain boundary could be observed. The surface composition of the ITO films was characterized by X-ray photoelectron spectroscopy (XPS). Oxygen atoms in both amorphous and crystalline ITO structures were observed from O 1 s XPS spectra. However, the peak of the oxygen atoms in amorphous ITO phase could only be found in samples prepared at low substrate temperatures. Its relative peak area decreased drastically when substrate temperatures were larger than 200 o C. In addition, a composition analysis from the XPS results revealed that the films deposited at low substrate temperatures contained high concentration of oxygen at the film surfaces. The oxygen-rich surfaces can be attributed to hydrolysis reactions of indium oxides, especially when large amount of the amorphous ITO were developed near the film surfaces.